Radiosynthesis of [11C]SB-705498, a selective transient receptor potential Vanilloid 1 (TRPV1) receptor antagonist

International Nuclear Information System (INIS)

Dolle, F.; Bramoulle, Y.; Deverre, J.R.; Bottlaender, M.; Passchier, J.

2011-01-01

Complete text of publication follows: Objectives: The transient receptor potential vanilloid 1 (TRPV1) receptor, previously known as the vanilloid receptor 1 (VR1), is a non-selective cation channel activated by a range of noxious stimuli and highly expressed in nociceptive fibres. TRPV1 receptor is involved in pain and sensitisation associated with tissue injury and inflammation and therefore represents a pharmacological target of choice for the development of novel therapeutic agents for the treatment of chronic pain, migraine and gastrointestinal disorders. Among a novel series of pyrrolidinyl ureas recently discovered by GSK, SB-705498 (1, namely 1-(2-bromophenyl)-3-[(R)-1-(5- trifluoromethylpyridin-2-yl)pyrrolidin-3-yl]urea) has been identified as a potent, selective and orally bioavailable TRPV1 antagonist and considered for positron emission tomography studies. SB-705498 (1) has therefore been isotopically labelled with the short-lived positron-emitter carbon-11 (t1/2: 20.38 min) at its urea site using [ 11 C]phosgene in a one-pot two-step process, via the intermediate preparation of 2-bromophenyl [ 11 C]isocyanate. Methods: Carbon-11-labeling of SB-705498 comprises: (A) Trapping of [ 11 C]phosgene (radio-synthesized from cyclotron-produced [ 11 C]methane via [ 11 C]carbon tetrachloride using minor modifications of published processes) at room temperature for 1 to 2 minutes in 250 μL of acetonitrile containing 0.6 μmole of 2-bromoaniline (2) giving 2-bromophenyl [ 11 C]isocyanate ([ 11 C]-3), followed by (B) addition of an excess of chiral (R)-1-(5- trifluoromethylpyridin-2-yl)pyrrolidin-3-ylamine (4, 40 μmoles in 500 μL of acetonitrile) as the second amine and reaction at room temperature for an additional one minute giving the desired urea derivative ([ 11 C]SB-705498 ([ 11 C]-1)), (C) dilution of the crude reaction mixture with water (500 μL) containing 4% (v:v) of DEA, injection and purification on a semi-preparative Waters Symmetry R C18 HPLC

Fluoride ion donor properties of cis-OsO(2)F(4): synthesis, raman spectroscopic study, and X-ray crystal structure of [OsO(2)F(3)][Sb(2)F(11)].

Science.gov (United States)

Hughes, Michael J; Mercier, Hélène P A; Schrobilgen, Gary J

2010-01-04

The salt, [OsO(2)F(3)][Sb(2)F(11)], has been synthesized by dissolution of cis-OsO(2)F(4) in liquid SbF(5), followed by removal of excess SbF(5) at 0 degrees C to yield orange, crystalline [OsO(2)F(3)][Sb(2)F(11)]. The X-ray crystal structure (-173 degrees C) consists of an OsO(2)F(3)(+) cation fluorine bridged to an Sb(2)F(11)(-) anion. The light atoms of OsO(2)F(3)(+) and the bridging fluorine atom form a distorted octahedron around osmium in which the osmium atom is displaced from its center toward an oxygen atom and away from the trans-fluorine bridge atom. As in other transition metal dioxofluorides, the oxygen ligands are cis to one another and the fluorine bridge atom is trans to an oxygen ligand and cis to the remaining oxygen ligand. The Raman spectrum (-150 degrees C) of solid [OsO(2)F(3)][Sb(2)F(11)] was assigned on the basis of the ion pair observed in the low-temperature crystal structure. Under dynamic vacuum, [OsO(2)F(3)][Sb(2)F(11)] loses SbF(5), yielding the known [mu-F(OsO(2)F(3))(2)][Sb(2)F(11)] salt with no evidence for [OsO(2)F(3)][SbF(6)] formation. Attempts to synthesize [OsO(2)F(3)][SbF(6)] by the reaction of [OsO(2)F(3)][Sb(2)F(11)] with an equimolar amount of cis-OsO(2)F(4) or by a 1:1 stoichiometric reaction of cis-OsO(2)F(4) with SbF(5) in anhydrous HF yielded only [mu-F(OsO(2)F(3))(2)][Sb(2)F(11)]. Quantum-chemical calculations at the SVWN and B3LYP levels of theory and natural bond orbital analyses were used to calculate the gas-phase geometries, vibrational frequencies, natural population analysis charges, bond orders, and valencies of OsO(2)F(3)(+), [OsO(2)F(3)][Sb(2)F(11)], [OsO(2)F(3)][SbF(6)], and Sb(2)F(11)(-). The relative thermochemical stabilities of [OsO(2)F(3)][SbF(6)], [OsO(2)F(3)][Sb(2)F(11)], [OsO(2)F(3)][AsF(6)], [mu-F(OsO(2)F(3))(2)][SbF(6)], [mu-F(OsO(2)F(3))(2)][Sb(2)F(11)], and [mu-F(OsO(2)F(3))(2)][AsF(6)] were assessed using the appropriate Born-Haber cycles to account for the preference for [mu-F(OsO(2)F(3

RHEOLOGICAL AND ELEMENTAL ANALYSES OF SIMULANT SB5 SLURRY MIX EVAPORATOR-MELTER FEED TANK SLURRIES

Energy Technology Data Exchange (ETDEWEB)

Fernandez, A.

2010-02-08

The Defense Waste Processing Facility (DWPF) will complete Sludge Batch 5 (SB5) processing in fiscal year 2010. DWPF has experienced multiple feed stoppages for the SB5 Melter Feed Tank (MFT) due to clogs. Melter throughput is decreased not only due to the feed stoppage, but also because dilution of the feed by addition of prime water (about 60 gallons), which is required to restart the MFT pump. SB5 conditions are different from previous batches in one respect: pH of the Slurry Mix Evaporator (SME) product (9 for SB5 vs. 7 for SB4). Since a higher pH could cause gel formation, due in part to greater leaching from the glass frit into the supernate, SRNL studies were undertaken to check this hypothesis. The clogging issue is addressed by this simulant work, requested via a technical task request from DWPF. The experiments were conducted at Aiken County Technology Laboratory (ACTL) wherein a non-radioactive simulant consisting of SB5 Sludge Receipt and Adjustment Tank (SRAT) product simulant and frit was subjected to a 30 hour SME cycle at two different pH levels, 7.5 and 10; the boiling was completed over a period of six days. Rheology and supernate elemental composition measurements were conducted. The caustic run exhibited foaming once, after 30 minutes of boiling. It was expected that caustic boiling would exhibit a greater leaching rate, which could cause formation of sodium aluminosilicate and would allow gel formation to increase the thickness of the simulant. Xray Diffraction (XRD) measurements of the simulant did not detect crystalline sodium aluminosilicate, a possible gel formation species. Instead, it was observed that caustic conditions, but not necessarily boiling time, induced greater thickness, but lowered the leach rate. Leaching consists of the formation of metal hydroxides from the oxides, formation of boric acid from the boron oxide, and dissolution of SiO{sub 2}, the major frit component. It is likely that the observed precipitation of Mg

NEPHELINE FORMATION STUDY FOR SLUDGE BATCH 4: PHASE 3 EXPERIMENTAL RESULTS

International Nuclear Information System (INIS)

Fox, K

2006-01-01

This Phase 3 study was undertaken to complement the previous phases of the nepheline formation studies1, 2 by continuing the investigation into the ability of the nepheline discriminator to predict the occurrence of nepheline crystallization in Sludge Batch 4 (SB4) glasses and into the impact of such phases on the durability of the SB4 glasses. The Phase 3 study had two primary objectives. The first was to continue to demonstrate the ability of the discriminator value to adequately predict the nepheline formation potential for specific glass systems of interest. The second was to generate additional data that have a high probability of supporting the SB4 variability study. To support these two objectives, sixteen glasses were selected based on the most recent SB4 compositional projection, Case 15C Blend 1.3 Four different frits were included, based on previous assessments of projected operating windows and melt rate,4, 5 with four WLs selected for each frit. Eight of these frit-sludge combinations covered WLs which tightly bound the nepheline discriminator value of 0.62, with the intent of refining this value to a level of confidence where it can be incorporated into offline administrative controls and/or the Process Composition Control System (PCCS) to support Slurry Mix Evaporator (SME) acceptability decisions. The remaining eight frit-sludge combinations targeted lower WLs (35 and 40%) and were prepared and analyzed to contribute needed data to the ComPro database6 to support a potential variability study for SB4

DWPF GLASS BEADS AND GLASS FRIT TRANSPORT DEMONSTRATION

Energy Technology Data Exchange (ETDEWEB)

Adamson, D; Bradley Pickenheim, B

2008-11-24

DWPF is considering replacing irregularly shaped glass frit with spherical glass beads in the Slurry Mix Evaporator (SME) process to decrease the yield stress of the melter feed (a non-Newtonian Bingham Plastic). Pilot-scale testing was conducted on spherical glass beads and glass frit to determine how well the glass beads would transfer when compared to the glass frit. Process Engineering Development designed and constructed the test apparatus to aid in the understanding and impacts that spherical glass beads may have on the existing DWPF Frit Transfer System. Testing was conducted to determine if the lines would plug with the glass beads and the glass frit slurry and what is required to unplug the lines. The flow loop consisted of vertical and horizontal runs of clear PVC piping, similar in geometry to the existing system. Two different batches of glass slurry were tested: a batch of 50 wt% spherical glass beads and a batch of 50 wt% glass frit in process water. No chemicals such as formic acid was used in slurry, only water and glass formers. The glass beads used for this testing were commercially available borosilicate glass of mesh size -100+200. The glass frit was Frit 418 obtained from DWPF and is nominally -45+200 mesh. The spherical glass beads did not have a negative impact on the frit transfer system. The transferring of the spherical glass beads was much easier than the glass frit. It was difficult to create a plug with glass bead slurry in the pilot transfer system. When a small plug occurred from setting overnight with the spherical glass beads, the plug was easy to displace using only the pump. In the case of creating a man made plug in a vertical line, by filling the line with spherical glass beads and allowing the slurry to settle for days, the plug was easy to remove by using flush water. The glass frit proved to be much more difficult to transfer when compared to the spherical glass beads. The glass frit impacted the transfer system to the point

DWPF GLASS BEADS AND GLASS FRIT TRANSPORT DEMONSTRATION

International Nuclear Information System (INIS)

Adamson, D.; Pickenheim, Bradley

2008-01-01

DWPF is considering replacing irregularly shaped glass frit with spherical glass beads in the Slurry Mix Evaporator (SME) process to decrease the yield stress of the melter feed (a non-Newtonian Bingham Plastic). Pilot-scale testing was conducted on spherical glass beads and glass frit to determine how well the glass beads would transfer when compared to the glass frit. Process Engineering Development designed and constructed the test apparatus to aid in the understanding and impacts that spherical glass beads may have on the existing DWPF Frit Transfer System. Testing was conducted to determine if the lines would plug with the glass beads and the glass frit slurry and what is required to unplug the lines. The flow loop consisted of vertical and horizontal runs of clear PVC piping, similar in geometry to the existing system. Two different batches of glass slurry were tested: a batch of 50 wt% spherical glass beads and a batch of 50 wt% glass frit in process water. No chemicals such as formic acid was used in slurry, only water and glass formers. The glass beads used for this testing were commercially available borosilicate glass of mesh size -100+200. The glass frit was Frit 418 obtained from DWPF and is nominally -45+200 mesh. The spherical glass beads did not have a negative impact on the frit transfer system. The transferring of the spherical glass beads was much easier than the glass frit. It was difficult to create a plug with glass bead slurry in the pilot transfer system. When a small plug occurred from setting overnight with the spherical glass beads, the plug was easy to displace using only the pump. In the case of creating a man made plug in a vertical line, by filling the line with spherical glass beads and allowing the slurry to settle for days, the plug was easy to remove by using flush water. The glass frit proved to be much more difficult to transfer when compared to the spherical glass beads. The glass frit impacted the transfer system to the point

Yb14MnSb11 as a High-Efficiency Thermoelectric Material

Science.gov (United States)

Snyder, G. Jeffrey; Gascoin, Franck; Brown, Shawna; Kauzlarich, Susan

2009-01-01

Yb14MnSb11 has been found to be wellsuited for use as a p-type thermoelectric material in applications that involve hotside temperatures in the approximate range of 1,200 to 1,300 K. The figure of merit that characterizes the thermal-to-electric power-conversion efficiency is greater for this material than for SiGe, which, until now, has been regarded as the state-of-the art high-temperature ptype thermoelectric material. Moreover, relative to SiGe, Yb14MnSb11 is better suited to incorporation into a segmented thermoelectric leg that includes the moderate-temperature p-type thermoelectric material CeFe4Sb12 and possibly other, lower-temperature p-type thermoelectric materials. Interest in Yb14MnSb11 as a candidate high-temperature thermoelectric material was prompted in part by its unique electronic properties and complex crystalline structure, which place it in a class somewhere between (1) a class of semiconducting valence compounds known in the art as Zintl compounds and (2) the class of intermetallic compounds. From the perspective of chemistry, this classification of Yb14MnSb11 provides a first indication of a potentially rich library of compounds, the thermoelectric properties of which can be easily optimized. The concepts of the thermoelectric figure of merit and the thermoelectric compatibility factor are discussed in Compatibility of Segments of Thermo - electric Generators (NPO-30798), which appears on page 55. The traditional thermoelectric figure of merit, Z, is defined by the equation Z = alpha sup 2/rho K, where alpha is the Seebeck coefficient, rho is the electrical resistivity, and k is the thermal conductivity.

Heterogeneous nucleation of Mg2Si on Sr11Sb10 nucleus in Mg–x(3.5, 5 wt.%)Si–1Al alloys

International Nuclear Information System (INIS)

Wang, Hui-Yuan; Chen, Lei; Liu, Bo; Li, Xiao-Ran; Wang, Jin-Guo; Jiang, Qi-Chuan

2012-01-01

After combined additions of Sr and Sb, most primary Mg 2 Si crystals in Mg–3.5Si–1Al and Mg–5Si–1Al alloys transformed from equiaxed-dendritic shapes to octahedral morphologies; while eutectic phases also changed from Chinese script to short rod-shapes. The mechanisms of complex modification of Sr and Sb were attributed to the heterogeneous nucleation of primary Mg 2 Si on Sr 11 Sb 10 nucleus, together with change in growth manners caused by incorporation of Sb in Mg 2 Si crystals. -- Highlights: ► The Sr 11 Sb 10 is the heterogeneous nucleation of primary Mg 2 Si in Mg–3.5Si–1Al alloys. ► Some Sb atoms were incorporated by substituting Si which changed growth manners of primary Mg 2 Si. ► Primary Mg 2 Si transformed from equiaxed-dendritic to octahedral after modification. ► Eutectic phases changed from Chinese script to short rod-shapes after modification.

Reconfirmation of frit 803 based on the January 2016 sludge batch 9 reprojection

Energy Technology Data Exchange (ETDEWEB)

Johnson, F. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Edwards, T. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)

2016-02-10

On January 11, 2016, Savannah River Remediation (SRR) provided the Savannah River National Laboratory (SRNL) with a Sludge Batch 9 (SB9) reprojection that was developed from the analyzed composition of a Tank 51 sample. This sample was collected after field washing had been completed in Tank 51 to support the alternate reductant task. Based on this reprojection, Frit 803 is still a viable option for the processing of SB9 under sludge-only operations and coupled (Actinide Removal Process (ARP) product with and without monosodium titanate (MST)) operations. The maximum projected volumes of ARP product that can be transferred from the Precipitate Reactor Feed Tank (PRFT) per Sludge Receipt and Adjustment Tank (SRAT) batch and the resulting Na₂O concentrations in the SRAT for coupled operations were determined. The Na₂O concentrations in the SRAT resulting from the maximum projected ARP product transfer volumes are consistent with those from the previous assessments that were based on the August 2015 projections. Regardless of the presence or absence of MST in the ARP product, the contribution of Na₂O to the resulting glass will be similar at the same waste loading (WL). These projected volumes of ARP product are not anticipated to be an issue for SB9. The actual transfer volumes from the PRFT to the SRAT are determined based upon the analyzed Na₂O concentrations in the PRFT samples, which has resulted in larger transfer volumes than those allowed by the projections for Sludge Batch 8 (SB8). An operating window of 32-40% WL around the nominal WL of 36% is achievable for both sludge-only and coupled operations; however, each of the glass systems studied does become limited by waste form affecting constraints (durability) at higher volumes of ARP product and WLs of 41-42%.

A Summary of Rheology Data For SB3 and SB2/3 Blend Simulant Savannah River Site Wastes

International Nuclear Information System (INIS)

KOOPMAN, DAVIDC.

2004-01-01

The purpose of this study was to document the rheological measurements made for Sludge Batch 3 (SB3) and the blend of SB3 with Sludge Batch 2 (SB2). These measurements were primarily made on Slurry Mix Evaporator (SME) products, i.e. melter feeds. Some measurements were made on SB2/3 blend Sludge Receipt and Adjustment Tank (SRAT) products. Measurements on radioactive SB3 and SB2/3 samples have been limited to sludge characterization. SB2/3 measurements studied the impact of changing the SRAT acid addition strategy on the SRAT and SME product rheology. SB2/3 measurements also studied the impact of changing the waste loading target (sludge oxides content in glass) of the SME product. SB3 measurements studied the impact of changes in the wash end point and acid addition strategy on the SME product (melter feed) rheology. A summary of the significant findings is given below: SB3 radioactive sludge and blended SB2/3 radioactive sludge were less viscous than SB2 radioactive sludge. SB2/3 b lend sludge is more viscous than SB3 sludge. SB3 simulant SME product rheology was strongly impacted by changing the noble metal concentrations to more closely match those of the qualification sample. This reduction in noble metals produced a lower pH product that was also considerably less viscous. Increased acid addition in the SB2/3 SRAT generally led to less viscous simulant SRAT products. This trend did not persist in the SME products. SME products became more viscous when increased acid was used in the SRAT cycle from 135 per cent up to 170 per cent of stoichiometry, then became less viscous as total acid was increased further to 185 per cent. A significant increase in hydrogen generation occurred between 170 per cent and 185 per cent. The impact of acid addition on SB3 SME products was also variable. The impact of waste loading changes from 31 to 35 to 40 per cent on SB2/3 simulant SME products led to more viscous melter feeds as waste loading increased at constant wt. per cent

Glass frits coated with silver nanoparticles for silicon solar cells

International Nuclear Information System (INIS)

Li, Yingfen; Gan, Weiping; Zhou, Jian; Li, Biyuan

2015-01-01

Graphical abstract: - Highlights: • Silver-coated glass frits for solar cells were prepared by electroless plating. • Gum Arabic was used as the activating agent of glass frits. • Silver-coated glass frits can improve the photovoltaic performances of solar cells. - Abstract: Glass frits coated with silver nanoparticles were prepared by electroless plating. Gum Arabic (GA) was used as the activating agent of glass frits without the assistance of stannous chloride or palladium chloride. The silver-coated glass frits prepared with different GA dosages were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and thermogravimetric analysis (TGA). The characterization results indicated that silver-coated glass frits had the structures of both glass and silver. Spherical silver nanoparticles were distributed on the glass frits evenly. The density and particle size of silver nanoparticles on the glass frits can be controlled by adjusting the GA dosage. The silver-coated glass frits were applied to silver pastes to act as both the densification promoter and silver crystallite formation aid in the silver electrodes. The prepared silver-coated glass frits can improve the photovoltaic performances of solar cells

Glass frits coated with silver nanoparticles for silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Li, Yingfen, E-mail: lyf350857423@163.com; Gan, Weiping; Zhou, Jian; Li, Biyuan

2015-06-30

Graphical abstract: - Highlights: • Silver-coated glass frits for solar cells were prepared by electroless plating. • Gum Arabic was used as the activating agent of glass frits. • Silver-coated glass frits can improve the photovoltaic performances of solar cells. - Abstract: Glass frits coated with silver nanoparticles were prepared by electroless plating. Gum Arabic (GA) was used as the activating agent of glass frits without the assistance of stannous chloride or palladium chloride. The silver-coated glass frits prepared with different GA dosages were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and thermogravimetric analysis (TGA). The characterization results indicated that silver-coated glass frits had the structures of both glass and silver. Spherical silver nanoparticles were distributed on the glass frits evenly. The density and particle size of silver nanoparticles on the glass frits can be controlled by adjusting the GA dosage. The silver-coated glass frits were applied to silver pastes to act as both the densification promoter and silver crystallite formation aid in the silver electrodes. The prepared silver-coated glass frits can improve the photovoltaic performances of solar cells.

17 CFR 202.11 - Public Company Accounting Oversight Board budget approval process.

Science.gov (United States)

2010-04-01

... 17 Commodity and Securities Exchanges 2 2010-04-01 2010-04-01 false Public Company Accounting Oversight Board budget approval process. 202.11 Section 202.11 Commodity and Securities Exchanges SECURITIES AND EXCHANGE COMMISSION INFORMAL AND OTHER PROCEDURES § 202.11 Public Company Accounting Oversight...

Influence of milling process in the surface energy of glass tile frits

International Nuclear Information System (INIS)

Tamayo, A.; Rubio, F.; Otero, J. L.; Rubio, J.

2013-01-01

In this work has been studied the influence of the milling process of two ceramic frits used in the ceramic tile industry. Both glass frits were of similar chemical composition changing SiO 2 by 5% of B 2 O 3 and both of them were water or dry milled. Glass frit surfaces were characterized by FT-IR, Karl-Fischer (K-F) titration and Inverse Gas Chromatography at Infinite Dilution (IGC-ID). By K-F titration it was observed that water milled frits presented 28 and 26 OH groups for 100 A 2 if they do not contain or contain boron, respectively. These surface changes are also observed by IGC-ID. Thus, the glass frit without boron and dry milled presented the highest dispersive surface energy (44 mJ.m - 2) and the less acidic constant (0.13 kJ.mol - 1). Both glass frits are amphoteric with acidic and base surface active sites, and that frit without boron presents the higher basicity. Milling process influences in the acid-base surface characteristics of both frits by increasing the basicity for the one without boron and increasing for the other one. This has been assigned to the different location of hydroxyl groups where the higher interaction is the one that does not contain boron and dry milled as K-F results. (Author)

Microcolumns with self-assembled particle frits for proteomics

DEFF Research Database (Denmark)

Ishihama, Yasushi; Rappsilber, Juri; Andersen, Jens S

2002-01-01

LC-MS-MS experiments in proteomics are usually performed with packed microcolumns employing frits or outlets smaller than the particle diameter to retain the packing material. We have developed packed microcolumns using self-assembled particles (SAPs) as frits that are smaller than the size...... of the outlet. A five to one ratio of outlet size to particle diameter appears to be the upper maximum. In these situations the particles assembled into an arch over the outlet like the stones in a stone bridge. When 3 microm particles were packed into a tapered column with an 8 microm outlet, two particles...

THE USE OF DI WATER TO MITIGATE DUSTING FOR ADDITION OF DWPF FRIT TO THE SLURRY MIX EVAPORATOR

Energy Technology Data Exchange (ETDEWEB)

Hansen, E.

2010-07-21

The Defense Waste Processing Facility (DPWF) presently is in the process to determine means to reduce water utilization in the Slurry Mix Evaporator (SME) process, thus reducing effluent and processing times. The frit slurry addition system mixes the dry frit with water, yielding approximately a 50 weight percent slurry containing frit and the other fraction water. This slurry is discharged into the SME and excess water is removed via boiling. To reduce this water load to the SME, DWPF has proposed using a pneumatic system in conveying the frit to the SME, in essence a dry delivery system. The problem associated with utilizing a dry delivery system with the existing frit is the generation of dust when discharged into the SME. The use of water has been shown to be effective in the mining industry as well in the DOE complex to mitigate dusting. The method employed by SRNL to determine the quantity of water to mitigate dusting in dry powders was effective, between a lab and bench scale tests. In those tests, it was shown that as high as five weight percent (wt%) of water addition was required to mitigate dust from batches of glass forming minerals used by the Waste Treatment Plant at Hanford, Washington. The same method used to determine the quantity of water to mitigate dusting was used in this task to determine the quantity of water to mitigate this dusting using as-received frit. The ability for water to mitigate dusting is due to its adhesive properties as shown in Figure 1-1. Wetting the frit particles allows for the smaller frit particles (including dust) to adhere to the larger frit particles or to agglomerate into large particles. Fluids other than water can also be used, but their adhesive properties are different than water and the quantity required to mitigate dusting is different, as was observed in reference 1. Excessive water, a few weight percentages greater than that required to mitigate dusting can cause the resulting material not to flow. The primary

Zr3NiSb7: a new antimony-enriched ZrSb2 derivative

Directory of Open Access Journals (Sweden)

V. Romaka

2008-08-01

Full Text Available Single crystals of trizirconium nickel heptaantimonide were synthesized from the constituent elements by arc-melting. The compound crystallizes in a unique structure type and belongs to the family of two-layer structures. All crystallographically unique atoms (3 × Zr, 1 × Ni and 7 × Sb are located at sites with m symmetry. The structure contains `Zr2Ni2Sb5' and `Zr4Sb9' fragments and might be described as a new ZrSb2 derivative with a high Sb content.

Factors influencing the preparation of silver-coated glass frit with polyvinyl-pyrrolidone

Science.gov (United States)

Xiang, Feng; Gan, Weiping

2018-01-01

In this work, a new electroless silver plating method for the synthesis of silver-coated glass frit composite powders with good morphology has been proposed and the polyvinyl-pyrrolidone (PVP) was used the activating agent. It was found that the weight ratio of PVP to glass frit affected the distribution and number of silver nanoparticles. Moreover, the loading capacity of the glass frit, the pH value and reaction temperature could influence the size of the silver nanoparticles and morphology of silver on the surface of glass frit. The as-prepared silver-coated glass frit was used to prepare a silver paste using an optimized process to form silver nanoparticles with uniform size and high density. The silver paste with silver-coated glass frit increased the photovoltaic conversion efficiency of silicon solar cells by 0.271% compared with the silver paste prepared with pure glass frit. The silver nanoparticles can promoted the precipitation of Ag crystallites on the silicon wafer. Therefore, the silver-coated glass frit can further optimize and enhance the electrical performance of solar cells.

Electronic and magnetic properties of SmCrSb3 and GdCrSb3: A first principles study

International Nuclear Information System (INIS)

Sandeep; Ghimire, M.P.; Thapa, R.K.

2011-01-01

The density of states (DOS) and the magnetic moments of SmCrSb 3 and GdCrSb 3 have been studied by first principles full-potential linearized augmented plane wave (FP-LAPW) method based on density functional theory (DFT). For the exchange-correlation potential, the local-spin density approximations with correlation energy (LSDA+U) method have been used. Total and partial DOS have been computed using the WIEN2k code. DOS result shows the exchange-splittings of Cr-3d and rare-earth (R) 4f states electrons, which are responsible for the ground state ferromagnetic (FM) behavior of the systems. The FM behavior of these systems is strongly influenced by the average number of Cr-3d and Sm (Gd) 4f-electrons. The effective moment of SmCrSb 3 is found to be 7.07 μ B while for GdCrSb 3 it is 8.27 μ B . The Cr atom plays a significant role on the magnetic properties due to the hybridization between Cr-3d and Sb-5p states. - Highlights: → DOS and the magnetic moments of SmCrSb 3 and GdCrSb 3 are studied by full-FP-LAPW method. → Exchange splitting of eg and t2g of Cr-3d states and the rare-earth 4f state electrons are responsible for ground state ferromagnetism. → Rare-earth magnetic moments are greater than Cr moment indicating presence of 4f states.

Research on Glass Frit Deposition Based on the Electrospray Process

Directory of Open Access Journals (Sweden)

Yifang Liu

2016-04-01

Full Text Available In this paper, the electrospray technology is used to easily deposit the glass frit into patterns at a micro-scale level. First, far-field electrospray process was carried out with a mixture of glass frit in the presence of ethanol. A uniform, smooth, and dense glass frit film was obtained, verifying that the electrospray technology was feasible. Then, the distance between the nozzle and the substrate was reduced to 2 mm to carry out near-field electrospray. The experimental process was improved by setting the range of the feed rate of the substrate to match both the concentration and the flow rate of the solution. Spray diameter could be less at the voltage of 2 kV, in which the glass frit film was expected to reach the minimum line width. A uniform glass frit film with a line width within the range of 400–500 μm was prepared when the speed of the substrate was 25 mm/s. It indicates that electrospray is an efficient technique for the patterned deposition of glass frit in wafer-level hermetic encapsulation.

Photoemission study of the skutterudite compounds CoSb sub 3 and RhSb sub 3

CERN Document Server

Ishii, H; Fujimori, A; Nagamoto, Y; Koyanagi, T; Sofo, J O

2002-01-01

We have studied the electronic structure of the skutterudite compounds CoSb sub 3 and Co(Sb sub 0 sub . sub 9 sub 6 Te sub 0 sub . sub 0 sub 4) sub 3 by photoemission spectroscopy. Valence-band spectra revealed that a significant amount Sb 5p states are present near the Fermi level and are hybridized with Co 3d states just below it. The spectra are well reproduced by the band-structure calculation, suggesting that the effect of electron correlations is not important. When Te is substituted for Sb and n-type carriers are doped into CoSb sub 3 , the spectra are shifted to higher binding energies as described by the rigid-band model. From this shift and the free-electron model for the conduction and valence bands, we have estimated the band gap of CoSb sub 3 to be 0.03-0.04 eV, consistent with transport measurements. Photoemission spectra of RhSb sub 3 have also been measured and revealed expected similarities to and differences from those of CoSb sub 3. Unusual temperature dependence has been observed for the s...

Microwave melt and offgas analysis results from a Ferro Corporation reg-sign glass frit

International Nuclear Information System (INIS)

Phillips, J.A.; Hoffman, C.R.; Knutson, P.T.

1995-03-01

In support of the Residue Treatment Technology (RTT) Microwave Solidification project, Waste Projects and Surface Water personnel conducted a series of experiments to determine the feasibility of encapsulating a surrogate sludge waste using the microwave melter. The surrogate waste was prepared by RTT and melted with five varying compositions of low melting glass frit supplied by the Ferro Corporation. Samples were melted using a 50% waste/50% glass frit and a 47.5% waste/47.5% glass frit/5% carbon powder. This was done to evaluate the effectiveness of carbon at reducing a sulfate-based surface scale which has been observed in previous experiments and in full-scale testing. These vitrified samples were subsequently submitted to Environmental Technology for toxicity characteristic leaching procedure (TCLP) testing. Two of the five frits tested in this experiment merit further evaluation as raw materials for the microwave melter. Ferro frit 3110 with and without carbon powder produced a crystalline product which passed TCLP testing. The quality of the melt product could be improved by increasing the melting temperature from 900 degrees C to approximately 1150-1200 degrees C. Ferro frit 3249 produced the optimal quality of glass based on visual observations, but failed TCLP testing for silver when melted without carbon powder. This frit requires a slightly higher melting temperature (≥ 1200 degrees C) compared to frit 3110 and produces a superior product. In conjunction with this work, Surface Water personnel conducted offgas analyses using a Thermal Desorption Mass Spectrometer (TDMS) on selected formulations. The offgas analyses identified and quantified water vapor (H 2 O), oxygen (O 2 ) and carbon oxides (CO and CO 2 ), sulfur (S) and sulfur oxides (SO and SO 2 ), and nitrogen (N 2 ) and nitrogen oxides (NO and NO 2 ) that volatilized during glass formation

Analysis of frit by sodium peroxide fusion and flow injection analysis

International Nuclear Information System (INIS)

Walker, N.; Whitaker, M.

1990-01-01

Test runs for the immobilization of radioactive wastes in glass are now underway at the TNX Facility of the Savannah River Site. The wastes are immobilized by the Integrated Defense Waste Processing Facility Melter System (IDMS) process. The IDMS makes a borosilicate glass. To make the glass, certain quantities of boron and silicate must be maintained in the melter. The silicate is added to the melter in a substance called frit. To determine the amount of frit to add, it is necessary to calculate the percent silicate in the frit. The present method of determining the silicate content of frit has yielded inconsistent results. The focus of this project was to develop and implement a new process for determining the silicate content of frit. The author chose to achieve this goal using a colormetric method

Relaxation of the lower frit loading constraint for DWPF process control

International Nuclear Information System (INIS)

Brown, K.G.

2000-01-01

The lower limit on the frit loading parameter when measurement uncertainty is introduced has impacted DWPF performance during immobilization of Tank 42 Sludge; therefore, any defensible relaxation or omission of this constraint should correspondingly increase DWPF waste loading and efficiency. Waste loading should be increased because the addition of frit is the current remedy for exceeding the lower frit loading constraint. For example, frit was added to DWPF SME Batches 94, 97 and 98 to remedy these batches for low frit loading. Attempts were also made to add frit in addition to the optimum computed to assure the lower frit loading constraint would be satisfied; however, approximately half of the SME Batches produced after Batch 98 have violated the lower frit loading constraint. If the DWPF batches did not have to be remediated and additional frit added because of the lower frit loading limit, then both, the performance of the DWPF process and the waste loading in the glass produced would be increased. Before determining whether or not the lower frit loading limit can be relaxed or omitted, the origin of this and the other constraints related to durability prediction must be examined. The lower limit loading constraint results from the need to make highly durable glass in DWPF. It is required that DWPF demonstrate that the glass produced would have durability that is at least two standard deviations greater than that of the Environmental Assessment (EA) glass. Glass durability cannot be measured in situ, it must be predicted from composition which can be measured. Fortunately, the leaching characteristics of homogeneous waste glasses is strongly related to the total molar free energy of the constituent species. Thus the waste acceptance specification has been translated into a requirement that the total molar free energy associated with the glass composition that would be produced from a DWPF melter feed batch be less than that of the EA glass accounting for

The equilibrium diagram and some properties of alloys Gd5Sb3-Tb5Sb3 system

International Nuclear Information System (INIS)

Azizov, Yu.S.; Abulkhaev, V.D.; Ganiev, I.N.

2001-01-01

The purpose of present work is investigation equilibrium diagram of Gd 5 Sb 3 -Tb 5 Sb 3 system in total range of concentrations. Equilibrium diagram of Gd 5 Sb 3 -Tb 5 Sb 3 system investigated by methods of difference-thermal, roentgen-phase and metallographic analyses. For the first time on the base of difference-thermal, roentgen-phase and metallographic analyses was formed the equilibrium diagram of Gd 5 Sb 3 -Tb 5 Sb 3 system. Was determined the cristal-chemical parameters of solid solutions with general formula Gd x Tb 5 - x Sb 3

9 CFR 202.111 - Rule 11: Hearing, oral or written.

Science.gov (United States)

2010-01-01

... 9 Animals and Animal Products 2 2010-01-01 2010-01-01 false Rule 11: Hearing, oral or written. 202.111 Section 202.111 Animals and Animal Products GRAIN INSPECTION, PACKERS AND STOCKYARDS... for oral hearing, timely filed. Declining to make such withdrawal shall not affect the rights or...

Photoluminescence properties of a new orange-red-emitting Sm(3+)-La3SbO7 phosphor.

Science.gov (United States)

Li, Zeng-Mei; Deng, Li-Gang; Zhao, Shan-Cang; Zhang, Shu-Qiu; Guo, Chang-Ying; Liang, Jing-Yun; Yue, Hui; Wan, Chun-Yan

2016-03-01

The antimonate compound La3SbO7 has high chemical stability, lattice stiffness and thermal stability. Orange-red-emitting antimonate-based phosphors La3SbO7:xSm(3+) (x = 0.02, 0.05, 0.08, 0.10, 0.15, 0.20 and 0.25) were synthesized. The phase structure and photoluminescence properties of these phosphors were investigated. The emission spectrum obtained on excitation at 407 nm contained exclusively the characteristic emissions of Sm(3+) at 568, 608, 654 and 716 nm, which correspond to the transitions from (4)G5/2 to (6)H5/2, (6)H7/2, (6)H9/2 and (6)H11/2 of Sm(3+), respectively. The strongest emission was located at 608 nm due to the (4)G5/2→(6)H7/2 transition of Sm(3+), generating bright orange-red light. The critical quenching concentration of Sm(3+) in La3SbO7:Sm(3+) phosphor was determined as 10% and the energy transfer between Sm(3+) was found to be through an exchange interaction. The International Commission on Illumination chromaticity coordinates of the La3SbO7:0.10Sm(3+) phosphors are located in the orange-red region. The La3SbO7:Sm(3+) phosphors may be potentially used as red phosphors for white light-emitting diodes. Copyright © 2015 John Wiley & Sons, Ltd.

Crystallographic study of the intermediate compounds SbZn, Sb3Zn4 and Sb2Zn3

International Nuclear Information System (INIS)

Adjadj, Fouzia; Belbacha, El-djemai; Bouharkat, Malek; Kerboub, Abdellah

2006-01-01

The processes of development of semiconductor ceramics made up of bismuth, antimony and zinc often require during their preparation to know the nature of the involved phases. For that, it is always essential to refer to the diagrams of balance between phases of the binary systems or ternary. We presented in this work the study by X-rays diffraction relating to the intermediate compounds SbZn, Sb 3 Zn 4 and Sb 2 Zn 3 . The analysis by X-rays is often useful to give supplement the results of the other experimental methods

12 CFR 202.11 - Relation to state law.

Science.gov (United States)

2010-01-01

... other interested party may request that the Board determine whether a state law is inconsistent with the.... (e) Exemption for state-regulated transactions—(1) Applications. A state may apply to the Board for... OPPORTUNITY ACT (REGULATION B) § 202.11 Relation to state law. (a) Inconsistent state laws. Except as...

Preparation of the Wire of ZChSnSb11-6 Used for Remanufacturing Thermal Spraying

Science.gov (United States)

Zhang, B.; Yang, Z. Y.; Fu, D. X.; Li, X. F.; Chen, W.

Tin base Babbitt alloy widely used in bearing bush production and repair, the performance of ZChSnSb11-6 is better than ZChSnSb8-4.But as a result of as-cast structure of ZChSnSb11-6 is rich in big hard phase, its processing performance is bad, in this paper, through the optimization of smelting, casting, extrusion, drawing and other processes we have been successfully prepared ZChSnSb11-6 wire suitable for thermal spraying. Through metallographic examination, micro hardness, bond strength and porosity testing, it was proved that the wire meet the requirements of bearing manufacturing thermal spraying.

Neutron scattering study of Ce3Au3Sb4

International Nuclear Information System (INIS)

Kasaya, Mitsuo; Katoh, Kenichi; Kohgi, Masahumi; Osakabe, Toyotaka

1993-01-01

Rare-earth compounds with an Y 3 Au 3 Sb 4 -type crystal structure are semiconductors or semi-metals. Among them, Ce 3 Au 3 Sb 4 is a semiconductor with an activation energy of about 640 K and shows no magnetic order down to 1.5 K. The magnetic part of the specific heat for Ce 3 Au 3 Sb 4 obtained by subtracting the value for La 3 Au 3 Sb 4 from the total specific heat of Ce 3 Au 3 Sb 4 shows a broad peak at around 10 K, the origin of which is well explained by the crystalline-field splitting determined by neutron scattering. (author)

Thermoelectric and mechanical properties of spark plasma sintered Cu3SbSe3 and Cu3SbSe4: Promising thermoelectric materials

Science.gov (United States)

Tyagi, Kriti; Gahtori, Bhasker; Bathula, Sivaiah; Toutam, Vijaykumar; Sharma, Sakshi; Singh, Niraj Kumar; Dhar, Ajay

2014-12-01

We report the synthesis of thermoelectric compounds, Cu3SbSe3 and Cu3SbSe4, employing the conventional fusion method followed by spark plasma sintering. Their thermoelectric properties indicated that despite its higher thermal conductivity, Cu3SbSe4 exhibited a much larger value of thermoelectric figure-of-merit as compared to Cu3SbSe3, which is primarily due to its higher electrical conductivity. The thermoelectric compatibility factor of Cu3SbSe4 was found to be ˜1.2 as compared to 0.2 V-1 for Cu3SbSe3 at 550 K. The results of the mechanical properties of these two compounds indicated that their microhardness and fracture toughness values were far superior to the other competing state-of-the-art thermoelectric materials.

31 CFR 202.3 - Authorization.

Science.gov (United States)

2010-07-01

... 31 Money and Finance: Treasury 2 2010-07-01 2010-07-01 false Authorization. 202.3 Section 202.3 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) FISCAL SERVICE, DEPARTMENT OF THE TREASURY FINANCIAL MANAGEMENT SERVICE DEPOSITARIES AND FINANCIAL AGENTS OF THE FEDERAL...

Special Frits for Direct-On Enamelling of Pipelines

International Nuclear Information System (INIS)

Berdzenishvili, I.; Siradze, M.; Erokhin, V.; Kldiashvili, R.

2010-01-01

The compositions of low-melting zirconium-strontium frits have been developed for direct-on enamelling of pipes. Owing to the given combination of active cations, toxic fluorine and expensive nickel and lithium were eliminated from glass frit compositions. The enamels were subjected to firing by the induction method. In the synthesized enamels, the optimal complex of properties combining high corrosion-resistant and thermo-mechanic indices, adhesive strength and required specifications was realized. These enamels are recommended for testing on pipelines. (author)

Lead-free soldering: Investigation of the Cu-Sn-Sb system along the Sn:Sb = 1:1 isopleth

Energy Technology Data Exchange (ETDEWEB)

Yuan, Y. [State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan 410083 (China); Department of Chemistry and Industrial Chemistry, University of Genoa, INSTM UdR Genoa, Via Dodecaneso 31, I-16146 Genoa (Italy); Borzone, G., E-mail: borzone@chimica.unige.it [Department of Chemistry and Industrial Chemistry, University of Genoa, INSTM UdR Genoa, Via Dodecaneso 31, I-16146 Genoa (Italy); Zanicchi, G.; Delsante, S. [Department of Chemistry and Industrial Chemistry, University of Genoa, INSTM UdR Genoa, Via Dodecaneso 31, I-16146 Genoa (Italy)

2011-02-03

Research highlights: > In the electronics industry, the solder alloys commonly used for assembly belong to the Sn-Pb system. Fulfilment of the EU RoHS (reduction of hazardous substances) requires the development of new lead-free alloys for applications in electronics, with the same or possibly better characteristics than the traditional Sn-Pb alloys. > This research concerns the investigation of the constitutional properties of the Cu-Sn-Sb system which is considered as lead-free replacement for high-temperature applications. - Abstract: The Cu-Sn-Sb system has been experimentally investigated by a combination of optical microscopy, differential scanning calorimetry (DSC) and electron probe microanalysis (EPMA). DSC was used to identify a total number of five invariant ternary reactions and the Sn:Sb = 1:1 isopleth section up to 65 at.% Cu was constructed by combining the DSC data with the EPMA analyses of annealed alloys and literature information. The composition limits of the binary phases were detected.

Characterization of Cu3SbS3 thin films grown by thermally diffusing Cu2S and Sb2S3 layers

OpenAIRE

Hussain, Arshad; Ahmed, Rashid; Ali, N.; Shaari, A.; Luo, Jing-Ting; Fu, Yong Qing

2017-01-01

Copper antimony sulphide (Cu3SbS3) with a p-type conductivity and optical band gaps in the range of 1.38 to 1.84 eV is considered to be a promising solar harvesting material with non-toxic and economical elements. In this study, we reported the fabrication of Cu3SbS3 thin films using successive thermal evaporation of Cu2S and Sb2S3 layers followed by annealing in an argon atmosphere at a temperature range of 300-375°C. The structural and optical properties of the as-deposited and annealed fil...

Sorghum phytochrome B inhibits flowering in long days by activating expression of SbPRR37 and SbGHD7, repressors of SbEHD1, SbCN8 and SbCN12.

Directory of Open Access Journals (Sweden)

Shanshan Yang

Full Text Available Light signaling by phytochrome B in long days inhibits flowering in sorghum by increasing expression of the long day floral repressors PSEUDORESPONSE REGULATOR PROTEIN (SbPRR37, Ma1 and GRAIN NUMBER, PLANT HEIGHT AND HEADING DATE 7 (SbGHD7, Ma6. SbPRR37 and SbGHD7 RNA abundance peaks in the morning and in the evening of long days through coordinate regulation by light and output from the circadian clock. 58 M, a phytochrome B deficient (phyB-1, ma3R genotype, flowered ∼60 days earlier than 100 M (PHYB, Ma3 in long days and ∼11 days earlier in short days. Populations derived from 58 M (Ma1, ma3R, Ma5, ma6 and R.07007 (Ma1, Ma3, ma5, Ma6 varied in flowering time due to QTL aligned to PHYB/phyB-1 (Ma3, Ma5, and GHD7/ghd7-1 (Ma6. PHYC was proposed as a candidate gene for Ma5 based on alignment and allelic variation. PHYB and Ma5 (PHYC were epistatic to Ma1 and Ma6 and progeny recessive for either gene flowered early in long days. Light signaling mediated by PhyB was required for high expression of the floral repressors SbPRR37 and SbGHD7 during the evening of long days. In 100 M (PHYB the floral activators SbEHD1, SbCN8 and SbCN12 were repressed in long days and de-repressed in short days. In 58 M (phyB-1 these genes were highly expressed in long and short days. Furthermore, SbCN15, the ortholog of rice Hd3a (FT, is expressed at low levels in 100 M but at high levels in 58 M (phyB-1 regardless of day length, indicating that PhyB regulation of SbCN15 expression may modify flowering time in a photoperiod-insensitive manner.

Thermoelectric and mechanical properties of spark plasma sintered Cu{sub 3}SbSe{sub 3} and Cu{sub 3}SbSe{sub 4}: Promising thermoelectric materials

Energy Technology Data Exchange (ETDEWEB)

Tyagi, Kriti; Gahtori, Bhasker; Bathula, Sivaiah; Toutam, Vijaykumar; Sharma, Sakshi; Singh, Niraj Kumar; Dhar, Ajay, E-mail: adhar@nplindia.org [CSIR-Network of Institutes for Solar Energy, Materials Physics and Engineering, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India)

2014-12-29

We report the synthesis of thermoelectric compounds, Cu{sub 3}SbSe{sub 3} and Cu{sub 3}SbSe{sub 4}, employing the conventional fusion method followed by spark plasma sintering. Their thermoelectric properties indicated that despite its higher thermal conductivity, Cu{sub 3}SbSe{sub 4} exhibited a much larger value of thermoelectric figure-of-merit as compared to Cu{sub 3}SbSe{sub 3}, which is primarily due to its higher electrical conductivity. The thermoelectric compatibility factor of Cu{sub 3}SbSe{sub 4} was found to be ∼1.2 as compared to 0.2 V{sup −1} for Cu{sub 3}SbSe{sub 3} at 550 K. The results of the mechanical properties of these two compounds indicated that their microhardness and fracture toughness values were far superior to the other competing state-of-the-art thermoelectric materials.

Organic monolith frits encased in polyether ether ketone tubing with improved durability for liquid chromatography.

Science.gov (United States)

Park, Sin Young; Cheong, Won Jo

2015-09-01

This study introduces a preparation method for polymer-encased monolith frits with improved durability for liquid chromatography columns. The inner surface of the polyether ether ketone tubing is pretreated with sulfuric acid in the presence of catalysts (vanadium oxide and sodium sulfate). The tubing was rinsed with water and acetone, flushed with nitrogen, and treated with glycidyl methacrylate. After washing, the monolith reaction mixture composed of lauryl methacrylate, ethylene glycol dimethacrylate, initiator, and porogenic solvent was filled in the tubing and subjected to in situ polymerization. The tubing was cut into thin slices and used as frits for microcolumns. To check their durability, the frit slices were placed in a vial and a heavy impact was applied on the vial by a vortex mixer for various periods. The frits made in the presence of catalysts were found to be more durable than those made without catalysts. Furthermore, when the monolith-incorporated tubing was used as a chromatography column, the column prepared in the presence of catalysts resulted in a better separation efficiency. The separation performance of the columns installed with the polyether ether ketone encased monolith frits was comparable to that of the columns installed with the commercial stainless-steel screen frits. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The crystal structure of Cu9.1(1)TeSb3, a stuffed derivative of Cr3Si

DEFF Research Database (Denmark)

Søtofte, Inger; Makovicky, E.; Karup-Møller, Sven

1998-01-01

The intermetallic compound Cu9.1(1)TeSb3 prepared at 973 K is an ordered member of the solid solution Cu64Te31Sb5-Cu70Te8Sb22 which also exists, for more limited composition ranges, between 673 K and 1173 K. It is a stuffed derivative of the structure type A15 (Cr3Si). Te is surrounded by twelve 3....../4-occupied Cu-positions in the vertices of a cubically-deformed icosahedron (Cu-Te = 2.614 Å) which itself is nested in an Sb-icosahedron (Cu-Sb = 2.777 Å (x2) and 2.603 Å). The Sb array corresponds to the Cr array in Cr3Si....

The system Sb2Te3-InS

International Nuclear Information System (INIS)

Safarov, M.G.; Gamidov, R.S.; Poladov, P.M.

1991-01-01

The system Sb 2 Te 3 -InS was investigated by the methods of physicochemical analysis. Its state diagram was constructed. It represents the stable diagonal of the mutual ternary system InTe-Sb 2 Te 3 -Sb 2 S 3 -InS. It was established that limited regions of α- and β-solid solutions on the basis of Sb 2 Te 3 and InS, achieving 15.5 and 8 mol.% respectively, formed in the system. Lattice periods of α- and β-solid solutions, their lattice volumes, number of atoms in them and densities were calculated

Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

Directory of Open Access Journals (Sweden)

Stefano Cecchi

2017-02-01

Full Text Available Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers. Here we present the epitaxy and characterization of Sb2Te3/GexSb2Te3+x van der Waals superlattices, where GexSb2Te3+x was intentionally fabricated. X-ray diffraction, Raman spectroscopy, scanning transmission electron microscopy, and lateral electrical transport data are reported. The intrinsic 2D nature of both sublayers is found to mitigate the intermixing in the structures, significantly improving the interface sharpness and ultimately the superlattice structural and electrical properties.

Characterization of a glass frit free TiCuAg-thick film metallization applied on aluminium nitride

International Nuclear Information System (INIS)

Reicher, R.; Smetana, W.; Adlassnig, A.; Schuster, J. C.; Gruber, U.

1997-01-01

The metallization of aluminium nitride substrates by glass frit free Ti CuAg-thick film pastes were investigated. Adhesion properties of the conductor paste were tested by measuring tensile strength and compared with commercial Cu-thick film pastes (within glass frit). Also numerical analysis of temperature-distribution and thermal extension of metallized aluminium nitride ceramic, induced by a continuous and a pulsed working electronic device were made with a finite element program. (author)

Study of structural and morphological properties of thermally evaporated Sn{sub 2}Sb{sub 6}S{sub 11} thin films

Energy Technology Data Exchange (ETDEWEB)

Ben Mehrez, N., E-mail: najia.benmehrez@gmail.com [Université Tunis El Manar, Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs, ENIT, BP 37, Le belvédère, 1002 Tunis (Tunisia); Khemiri, N. [Université Tunis El Manar, Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs, ENIT, BP 37, Le belvédère, 1002 Tunis (Tunisia); Kanzari, M. [Université Tunis El Manar, Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs, ENIT, BP 37, Le belvédère, 1002 Tunis (Tunisia); Institut Préparatoire aux Etudes d’Ingénieurs de Tunis Montfleury, Université de Tunis (Tunisia)

2016-10-01

In this study, we report the structural and morphological properties of the new material Sn{sub 2}Sb{sub 6}S{sub 11} thin films prepared on glass substrates by vacuum thermal evaporation at various substrate temperatures (30, 60, 100, 140, 180 and 200 °C). Sn{sub 2}Sb{sub 6}S{sub 11} ingot was synthesized by the horizontal Bridgman technique. The structural properties of Sn{sub 2}Sb{sub 6}S{sub 11} powder were studied by X-ray diffraction (XRD), transmission electron microscopy (TEM) and Raman spectroscopy. The films were characterized for their structural properties by using XRD. All films were polycrystalline in nature. The variations of the structural parameters of the films with the substrate temperature were investigated. The results show that the crystallite sizes increase as the substrate temperature increases. The morphological properties of the films were analyzed by atomic force microscopy (AFM). The roughness and the topography of the surface of the films strongly depend on the substrate temperature. - Highlights: • Sn{sub 2}Sb{sub 6}S{sub 11} powder was successfully synthesized by the horizontal Bridgman technique. • Sn{sub 2}Sb{sub 6}S{sub 11} films were grown by thermal evaporation at different substrate temperatures. • Structural properties of Sn{sub 2}Sb{sub 6}S{sub 11} powder were investigated. • The effect of the substrate temperature on structural and morphological of Sn{sub 2}Sb{sub 6}S{sub 11} films properties was studied.

Barikaite, Pb₁₀Ag₃(Sb₈As₁₁)Σ₁₉S₄₀, a new member of the sartorite homologous series

DEFF Research Database (Denmark)

Topa, Dan; Makovicky, Emil; Tajeddin, H.

2013-01-01

-AsSb-Pb-rich sulfosalts, tetrahedrite-tennantite, realgar, pyrite and electrum. Barikaite appears as inclusions in guettardite. The mineral is opaque, greyish black with a metallic lustre; it is brittle without any discernible cleavage. In reflected light barikaite is greyish white, pleochroism is distinct, white to dark.......37 (on the basis of 32Me + 40S = 72 a.p.f.u.). The simplified formula, Pb10Ag3(Sb8As11)Σ19S40, is in accordance with the results of a crystal-structure analysis, and requires Pb 37.89, Ag 5.91, Sb 17.79, As 15.05 and S 23.42 (wt.%). The variation of chemical composition is minor, the empirical formula......). The strongest eight lines in the (calculated) powder-diffraction pattern [d in Å(I)(hkl)] are: 3.835(63)(022), 3.646(100)(016), 3.441(60)(212), 3.408(62)(214), 2.972(66)(216), 2.769(91)(222), 2.752(78)(424) and 2.133(54)(402). Barikaite is the N = 4 member of the sartorite homologous series with a near...

Influence of milling process in the surface energy of glass tile frits; Influencia de la molienda en la energia superficial de fritas para esmaltes

Energy Technology Data Exchange (ETDEWEB)

Tamayo, A.; Rubio, F.; Oteo, J. L.; Rubio, J.

2013-05-01

In this work has been studied the influence of the milling process of two ceramic frits used in the ceramic tile industry. Both glass frits were of similar chemical composition changing SiO{sub 2} by 5% of B{sub 2}O{sub 3} and both of them were water or dry milled. Glass frit surfaces were characterized by FT-IR, Karl-Fischer (K-F) titration and Inverse Gas Chromatography at Infinite Dilution (IGC-ID). By K-F titration it was observed that water milled frits presented 28 and 26 OH groups for 100 A{sup 2} if they do not contain or contain boron, respectively. These surface changes are also observed by IGC-ID. Thus, the glass frit without boron and dry milled presented the highest dispersive surface energy (44 mJ.m{sup -}2) and the less acidic constant (0.13 kJ.mol{sup -}1). Both glass frits are amphoteric with acidic and base surface active sites, and that frit without boron presents the higher basicity. Milling process influences in the acid-base surface characteristics of both frits by increasing the basicity for the one without boron and increasing for the other one. This has been assigned to the different location of hydroxyl groups where the higher interaction is the one that does not contain boron and dry milled as K-F results. (Author) 30 refs.

Influence of milling process in the surface energy of glass tile frits; Influencia de la molienda en la energia superficial de fritas para esmaltes

Energy Technology Data Exchange (ETDEWEB)

Tamayo, A.; Rubio, F.; Otero, J. L.; Rubio, J.

2013-06-01

In this work has been studied the influence of the milling process of two ceramic frits used in the ceramic tile industry. Both glass frits were of similar chemical composition changing SiO{sub 2} by 5% of B{sub 2}O{sub 3} and both of them were water or dry milled. Glass frit surfaces were characterized by FT-IR, Karl-Fischer (K-F) titration and Inverse Gas Chromatography at Infinite Dilution (IGC-ID). By K-F titration it was observed that water milled frits presented 28 and 26 OH groups for 100 A{sup 2} if they do not contain or contain boron, respectively. These surface changes are also observed by IGC-ID. Thus, the glass frit without boron and dry milled presented the highest dispersive surface energy (44 mJ.m{sup -}2) and the less acidic constant (0.13 kJ.mol{sup -}1). Both glass frits are amphoteric with acidic and base surface active sites, and that frit without boron presents the higher basicity. Milling process influences in the acid-base surface characteristics of both frits by increasing the basicity for the one without boron and increasing for the other one. This has been assigned to the different location of hydroxyl groups where the higher interaction is the one that does not contain boron and dry milled as K-F results. (Author)

Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

NARCIS (Netherlands)

Cecchi, Stefano; Zallo, Eugenio; Momand, Jamo; Wang, Ruining; Kooi, Bart J.; Verheijen, Marcel A.; Calarco, Raffaella

Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers.

Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

NARCIS (Netherlands)

Cecchi, S.; Zallo, E.; Momand, J.; Wang, R.; Kooi, B.J.; Verheijen, M.A.; Calarco, R.

Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers. Here

Improved electrochemical performance of natural honeycomb templated LiSbO3 as an anode in lithium-ion battery

International Nuclear Information System (INIS)

Kundu, M.; Mahanty, S.; Basu, R.N.

2011-01-01

Highlights: → LiSbO 3 powders are synthesized by using honeycomb from natural beehive as template. → Agglomeration-free morphology with discrete cubic shaped 40-80 nm particles. → Electrochemically active anode in lithium-ion coin cells. → Improved capacity retention and rate performance in templated LiSbO 3 . - Abstract: LiSbO 3 has been synthesized by wet-chemical route using natural honeycomb as template, followed by thermal treatment at 850 deg. C. X-ray powder diffraction (XRD) confirms a single phase material having an orthorhombic crystal structure with lattice parameters of a = 4.912 A, b = 8.679 A and c = 5.089 A. Field emission scanning electron microscopy (FESEM) revealed that while conventional LiSbO 3 synthesized without using any template (C-LiSbO 3 ) consists of softly agglomerated clusters of bar-shaped multifaceted micrometer-sized grains (0.5-4.0 μm long and 0.5-1.0 μm wide), templated LiSbO 3 (T-LiSbO 3 ) consists of an agglomeration-free morphology with discrete cubic shaped particles of sizes 40-80 nm. Electrochemical investigation in 2032 type coin cells vs Li/Li + shows that Li insertion in LiSbO 3 takes place at 0.78 V while Li extraction occurs in two stages at 1.1 and 1.4 V with initial capacities of 178 and 196 mAh g -1 for C-LiSbO 3 and T-LiSbO 3 respectively. While C-LiSbO 3 shows a drastic capacity fading retaining only 28% of initial capacity after 100 cycles, T-LiSbO 3 retains ∼48% of the initial capacity due to the faceted morphology of the nanoparticles.

GLASS FABRICATION AND PRODUCT CONSISTENCY TESTING OF LANTHANIDE BOROSHILICATE FRIT X COMPOSITION FOR PLUTONIUM DISPOSITION

Energy Technology Data Exchange (ETDEWEB)

Marra, J

2006-11-21

The Department of Energy Office of Environmental Management (DOE/EM) plans to conduct the Plutonium Disposition Project at the Savannah River Site (SRS) to disposition excess weapons-usable plutonium. A plutonium glass waste form is the preferred option for immobilization of the plutonium for subsequent disposition in a geologic repository. A reference glass composition (Lanthanide Borosilicate (LaBS) Frit B) was developed during the Plutonium Immobilization Program (PIP) to immobilize plutonium in the late 1990's. A limited amount of performance testing was performed on this baseline composition before efforts to further pursue Pu disposition via a glass waste form ceased. Recent FY05 studies have further investigated the LaBS Frit B formulation as well as development of a newer LaBS formulation denoted as LaBS Frit X. The objectives of this present task were to fabricate plutonium loaded LaBS Frit X glass and perform corrosion testing to provide near-term data that will increase confidence that LaBS glass product is suitable for disposal in the Yucca Mountain Repository. Specifically, testing was conducted in an effort to provide data to Yucca Mountain Project (YMP) personnel for use in performance assessment calculations. Plutonium containing LaBS glass with the Frit X composition with a 9.5 wt% PuO{sub 2} loading was prepared for testing. Glass was prepared to support Product Consistency Testing (PCT) at Savannah River National Laboratory (SRNL). The glass was thoroughly characterized using x-ray diffraction (XRD) and scanning electron microscopy coupled with energy dispersive spectroscopy (SEM/EDS) prior to performance testing. A series of PCTs were conducted at SRNL using quenched Pu Frit X glass with varying exposed surface areas. Effects of isothermal and can-in-canister heat treatments on the Pu Frit X glass were also investigated. Another series of PCTs were performed on these different heat-treated Pu Frit X glasses. Leachates from all these PCTs

Fast diffusion in the intermetallics Ni3Sb and Fe3Si: a neutron scattering study

International Nuclear Information System (INIS)

Randl, O.G.

1994-02-01

We present the results of neutron scattering experiments designed to elucidate the reason for the extraordinarily fast majority component diffusion in two intermetallic alloys of DO 3 structure, Fe 3 Si and Ni 3 Sb: We have performed diffraction measurements in order to determine the crystal structure and the state of order of both alloys as a function of composition and temperature. The results on Fe 3 Si essentially confirm the classical phase diagram: The alloys of a composition between 16 and 25 at % Si are DO 3 -ordered at room temperature and disorder at high temperatures. The high-temperature phase Ni 3 Sb also crystallizes in the DO 3 structure. Vacancies are created in one Ni sublattice at Sb contents beyond 25 at %. In a second step the diffusion mechanism in Ni 3 Sb has been studied by means of quasielastic neutron scattering. The results are reconcileable with a very simple NN jump model between the two different Ni sublattices. Finally, the lattice dynamics of Fe 3 Si and Ni 3 Sb has been studied by inelastic neutron scattering in dependence of temperature (both alloys) and alloy composition (Fe 3 Si only). The results on Fe 3 Si indicate clearly that phonon enhancement is not the main reason for fast diffusion in this alloy. In Ni 3 Sb no typical signs of phonon-enhanced diffusion have been found either. As a conclusion, fast diffusion in DO 3 intermetallics is explained by extraordinarily high vacancy concentrations (several atomic percent) in the majority component sublattices. (author)

Effect of Sb content on the thermoelectric properties of annealed CoSb_3 thin films deposited via RF co-sputtering

International Nuclear Information System (INIS)

Ahmed, Aziz; Han, Seungwoo

2017-01-01

Graphical abstract: The X-ray diffraction patterns and temperature dependence of the Seebeck coefficient of the annealed Co–Sb thin films. - Highlights: • CoSb_3 phase thin films were prepared using RF co sputtering method. • Thin film thermoelectric properties were hugely dependent on Sb content. • All thin films shows n-type conduction behavior at high temperatures. • The thin films with excess Sb possess the largest Seebeck coefficient. • The thin films with CoSb_2 phase possess the largest power factor. - Abstract: A series of CoSb_3 thin films with Sb contents in the range 70–79 at.% were deposited at room temperature via RF co-sputtering. The thin films were amorphous in the as-deposited state and annealed at 300 °C for 3 h to obtain crystalline samples. The annealed thin films were characterized using scanning electron microscopy and X-ray diffraction (XRD), and these data indicate that the films exhibited good crystallinity. The XRD patterns indicate single-phase CoSb_3 thin films in the Sb-rich samples. For the Sb-deficient samples, however, mixed-phase thin films consisting of CoSb_2 and CoSb_3 components were obtained. The electrical and thermoelectric properties were measured at temperatures up to 760 K and found to be highly sensitive to the phases that were present. We observed a change in the thermoelectric properties of the films from p-type at low temperatures to n-type at high temperatures, which indicates potential applications as n-type thermoelectric thin films. A large Seebeck coefficient and power factor was obtained for the single-phase CoSb_3 thin films. The CoSb_2 phase thin films were also found to possess a significant Seebeck coefficient, which coupled with the much smaller electrical resistivity, provided a larger power factor than the single-phase CoSb_3 thin films. We report maximum power factor of 7.92 mW/m K"2 for the CoSb_2-containing mixed phase thin film and 1.26 mW/m K"2 for the stoichiometric CoSb_3 thin film.

GLASS FABRICATION AND PRODUCT CONSISTENCY TESTING OF LANTHANIDE BOROSILICATE FRIT X COMPOSITION FOR PLUTONIUM DISPOSITION

Energy Technology Data Exchange (ETDEWEB)

Marra, J

2006-11-15

The Department of Energy Office of Environmental Management (DOE/EM) plans to conduct the Plutonium Disposition Project at the Savannah River Site (SRS) to disposition excess weapons-usable plutonium. A plutonium glass waste form is the preferred option for immobilization of the plutonium for subsequent disposition in a geologic repository. A reference glass composition (Lanthanide Borosilicate (LaBS) Frit B) was developed during the Plutonium Immobilization Program (PIP) to immobilize plutonium in the late 1990's. A limited amount of performance testing was performed on this baseline composition before efforts to further pursue Pu disposition via a glass waste form ceased. Recent FY05 studies have further investigated the LaBS Frit B formulation as well as development of a newer LaBS formulation denoted as LaBS Frit X. The objectives of this present task were to fabricate plutonium loaded LaBS Frit X glass and perform corrosion testing to provide near-term data that will increase confidence that LaBS glass product is suitable for disposal in the Yucca Mountain Repository. Specifically, testing was conducted in an effort to provide data to Yucca Mountain Project (YMP) personnel for use in performance assessment calculations. Plutonium containing LaBS glass with the Frit X composition with a 9.5 wt% PuO{sub 2} loading was prepared for testing. Glass was prepared to support Product Consistency Testing (PCT) at Savannah River National Laboratory (SRNL). The glass was thoroughly characterized using x-ray diffraction (XRD) and scanning electron microscopy coupled with energy dispersive spectroscopy (SEM/EDS) prior to performance testing. A series of PCTs were conducted at SRNL using quenched Pu Frit X glass with varying exposed surface areas. Effects of isothermal and can-in-canister heat treatments on the Pu Frit X glass were also investigated. Another series of PCTs were performed on these different heat-treated Pu Frit X glasses. Leachates from all these PCTs

The OsO(3)F(+) and mu-F(OsO(3)F)(2)(+) cations: their syntheses and study by Raman and (19)F NMR spectroscopy and electron structure calculations and X-ray crystal structures of [OsO(3)F][PnF(6)] (Pn = As, Sb), [OsO(3)F][HF](2)[AsF(6)], [OsO(3)F][HF][SbF(6)], and [OsO(3)F][Sb(3)F(16)].

Science.gov (United States)

Gerken, Michael; Dixon, David A; Schrobilgen, Gary J

2002-01-28

The fluoride ion donor properties of OsO(3)F(2) have been investigated. The salts [OsO(3)F][AsF(6)], [OsO(3)F][HF](2)[AsF(6)], mu-F(OsO(3)F)(2)[AsF(6)], [OsO(3)F][HF](2)[SbF(6)], and [OsO(3)F][HF][SbF(6)] have been prepared by reaction of OsO(3)F(2) with AsF(5) and SbF(5) in HF solvent and have been characterized in the solid state by Raman spectroscopy. The single-crystal X-ray diffraction studies of [OsO(3)F][AsF(6)] (P2(1)/n, a = 7.0001(11) A, c = 8.8629(13) A, beta = 92.270(7) degrees, Z = 4, and R(1) = 0.0401 at -126 degrees C), [OsO(3)F][SbF(6)] (P2(1)/c, a = 5.4772(14) A, b = 10.115(3) A, c = 12.234(3) A, beta = 99.321(5) degrees, Z = 4, and R(1) = 0.0325 at -173 degrees C), [OsO(3)F][HF](2)[AsF(6)] (P2(1)/n, a = 5.1491(9) A, b = 8.129(2) A, c = 19.636(7) A, beta = 95.099(7) degrees, Z = 4, and R(1) = 0.0348 at -117 degrees C), and [OsO(3)F][HF][SbF(6)] (Pc, a = 5.244(4) A, b = 9.646(6) A, c = 15.269(10) A, beta = 97.154(13) degrees, Z = 4, and R(1) = 0.0558 at -133 degrees C) have shown that the OsO(3)F(+) cations exhibit strong contacts to the anions and HF solvent molecules giving rise to cyclic, dimeric structures in which the osmium atoms have coordination numbers of 6. The reaction of OsO(3)F(2) with neat SbF(5) yielded [OsO(3)F][Sb(3)F(16)], which has been characterized by (19)F NMR spectroscopy in SbF(5) and SO(2)ClF solvents and by Raman spectroscopy and single-crystal X-ray diffraction in the solid state (P4(1)m, a = 10.076(6) A, c = 7.585(8) A, Z = 2, and R(1) = 0.0858 at -113 degrees C). The weak fluoride ion basicity of the Sb(3)F(16)(-) anion resulted in an OsO(3)F(+) cation (C(3)(v) point symmetry) that is well isolated from the anion and in which the osmium is four-coordinate. The geometrical parameters and vibrational frequencies of OsO(3)F(+), ReO(3)F, mu-F(OsO(3)F)(2)(+), (FO(3)Os--FPnF(5))(2), and (FO(3)Os--(HF)(2)--FPnF(5))(2) (Pn = As, Sb) have been calculated using density functional theory methods.

Sb{sub 7}Te{sub 3}/ZnSb multilayer thin films for high thermal stability and long data retention phase-change memory

Energy Technology Data Exchange (ETDEWEB)

Chen, Shiyu; Wu, Weihua [Functional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, Shanghai 201804 (China); Zhai, Jiwei, E-mail: apzhai@tongji.edu.cn [Functional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, Shanghai 201804 (China); Song, Sannian; Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Science, Shanghai 200050 (China)

2017-04-15

Highlights: • Sb{sub 7}Te{sub 3} (ST) provides a fast crystallization speed, low melting temperature. • The Sb{sub 7}Te{sub 3}/ZnSb films exhibits faster crystallization speed, high thermal stability. • The calculated temperature for 10-year data retention is about 127 {sup o}C. • The Sb{sub 7}Te{sub 3}/ZnSb multilayer configuration with low power consumption. - Abstract: Phase-change memory is regard as one of the most promising candidates for the next-generation non-volatile memory. In this work, we proposed a Sb{sub 7}Te{sub 3}/ZnSb multilayer thin films to improve the thermal stability of Sb-rich Sb{sub 3}Te{sub 7}. The sheet resistance ratio between amorphous and crystalline states reached up to 4 orders of magnitude. With regard to the thermal stability, the calculated temperature for 10-year data retention is about 127 °C. The threshold current and threshold voltage of a cell based on Sb{sub 7}Te{sub 3}/ZnSb are 6.9 μA and 1.9 V, respectively. The lower RESET power is presented in the PCM cells of Sb{sub 7}Te{sub 3}/ZnSb films, benefiting from its high resistivity.

Electrodeposition and electrochemical characterisation of thick and thin coatings of Sb and Sb/Sb2O3 particles for Li-ion battery anodes

International Nuclear Information System (INIS)

Bryngelsson, Hanna; Eskhult, Jonas; Edstroem, Kristina; Nyholm, Leif

2007-01-01

The possibilities to electrodeposit thick coatings composed of nanoparticles of Sb and Sb 2 O 3 for use as high-capacity anode materials in Li-ion batteries have been investigated. It is demonstrated that the stability of the coatings depends on their Sb 2 O 3 concentrations as well as microstructure. The electrodeposition reactions in electrolytes with different pH and buffer capacities were studied using chronopotentiometry and electrochemical quartz crystal microbalance measurements. The obtained deposits, which were characterised with XRD and SEM, were also tested as anode materials in Li-ion batteries. The influence of the pH and buffer capacity of the deposition solution on the composition and particle size of the deposits were studied and it is concluded that depositions from a poorly buffered solution of antimony-tartrate give rise to good anode materials due to the inclusion of precipitated Sb 2 O 3 nanoparticles in the Sb coatings. Depositions under conditions yielding pure Sb coatings give rise to deposits composed of large crystalline particles with poor anode stabilities. The presence of a plateau at about 0.8 V versus Li + /Li due to SEI forming reactions and the origin of another plateau at about 0.4 V versus Li + /Li seen during the lithiation of thin Sb coatings are also discussed. It is demonstrated that the 0.4 V plateau is present for Sb coatings for which the (0 1 2) peak is the main peak in the XRD diffractogram

Laser irradiation and thermal treatment inducing selective crystallization in Sb2O3-Sb2S3 glassy films

Science.gov (United States)

Avila, L. F.; Pradel, A.; Ribeiro, S. J. L.; Messaddeq, Y.; Nalin, M.

2015-02-01

The influence of both thermal treatment and laser irradiation on the structural and optical properties of films in the Sb2O3-Sb2S3 system was investigated. The films were prepared by RF-sputtering using glass compositions as raw materials. Irreversible photodarkening effect was observed after exposure the films to a 458 nm solid state laser. It is shown, for the first time, the use of holographic technique to measure "in situ", simultaneously and independently, the phase and amplitude modulations in glassy films. The films were also photo-crystallized and analysed "in situ" using a laser coupled to a micro-Raman equipment. Results showed that Sb2S3 crystalline phase was obtained after irradiation. The effect of thermal annealing on the structure of the films was carried out. Different from the result obtained by irradiation, thermal annealing induces the crystallization of the Sb2O3 phase. Photo and thermal induced effects on films were studied using UV-Vis and Raman spectroscopy, atomic force microscopy (AFM), thermal analysis (DSC), X-ray diffraction, scanning electron microscopy (MEV) and energy-dispersive X-ray spectroscopy (EDX).

Yield of 117Sb, 118mSb, 120mSb, 122Sb, 124Sb in reactions Sn (p, xn)

International Nuclear Information System (INIS)

Dmitriev, P.P.; Konstantinov, I.O.

1993-01-01

Yield of 117 Sb, 118m Sb, 120m Sb, 122 Sb, 124 Sb from thick target depending on proton energy is measured. The maximum proton energy is 21.7±0.2 MeV. Antimony isotopes yield in separate reactions when irradiating of tin isotopes with 100% enrichment is determined using the method published earlier. The methods for production of 117 Sb, 118m Sb, 120m Sb, 122 Sb, 124 Sb with high radioisotope purity are shown. 13 refs., 1 fig., 3 tabs

Polyether ether ketone encased monolith frits made of polyether ether ketone tubing with a 0.25 mm opening resulting in an improved separation performance in liquid chromatography.

Science.gov (United States)

Park, Sin Young; Cheong, Won Jo

2016-05-01

Tiny polyether ether ketone encased monolith frits have been prepared by modified catalytic sulfonation of the inner surface of polyether ether tubing (1.6 mm od, 0.25 mm id) followed by modified formation of organic monolith and cutting of the tubing into slices. The frit was placed below the central hole of the column outlet union and supported by a combination of a silica capillary (0.365 mm od, 0.05 mm id) and a polyether ether ketone sleeve (1.6 mm od, 0.38 mm id) tightened with a nut and a ferrule when the column was packed to prevent sinking of the frit element into the union hole (0.25 mm opening) otherwise. The column packed this way with the frits investigated in this study has shown better separation performance owing to the reduced frit volume in comparison to the column packed with a commercial stainless-steel screen frit. This study establishes the strategy of disposable microcolumns in which cheap disposable frits are used whenever the column is re-packed to yield columns of even better chromatographic performance than the columns with commercial frits. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of Sb content on the thermoelectric properties of annealed CoSb{sub 3} thin films deposited via RF co-sputtering

Energy Technology Data Exchange (ETDEWEB)

Ahmed, Aziz, E-mail: aziz_ahmed@ust.ac.kr [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 305-350 (Korea, Republic of); Department of Nano-Mechanics, Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of); Han, Seungwoo, E-mail: swhan@kimm.re.kr [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 305-350 (Korea, Republic of); Department of Nano-Mechanics, Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of)

2017-06-30

Graphical abstract: The X-ray diffraction patterns and temperature dependence of the Seebeck coefficient of the annealed Co–Sb thin films. - Highlights: • CoSb{sub 3} phase thin films were prepared using RF co sputtering method. • Thin film thermoelectric properties were hugely dependent on Sb content. • All thin films shows n-type conduction behavior at high temperatures. • The thin films with excess Sb possess the largest Seebeck coefficient. • The thin films with CoSb{sub 2} phase possess the largest power factor. - Abstract: A series of CoSb{sub 3} thin films with Sb contents in the range 70–79 at.% were deposited at room temperature via RF co-sputtering. The thin films were amorphous in the as-deposited state and annealed at 300 °C for 3 h to obtain crystalline samples. The annealed thin films were characterized using scanning electron microscopy and X-ray diffraction (XRD), and these data indicate that the films exhibited good crystallinity. The XRD patterns indicate single-phase CoSb{sub 3} thin films in the Sb-rich samples. For the Sb-deficient samples, however, mixed-phase thin films consisting of CoSb{sub 2} and CoSb{sub 3} components were obtained. The electrical and thermoelectric properties were measured at temperatures up to 760 K and found to be highly sensitive to the phases that were present. We observed a change in the thermoelectric properties of the films from p-type at low temperatures to n-type at high temperatures, which indicates potential applications as n-type thermoelectric thin films. A large Seebeck coefficient and power factor was obtained for the single-phase CoSb{sub 3} thin films. The CoSb{sub 2} phase thin films were also found to possess a significant Seebeck coefficient, which coupled with the much smaller electrical resistivity, provided a larger power factor than the single-phase CoSb{sub 3} thin films. We report maximum power factor of 7.92 mW/m K{sup 2} for the CoSb{sub 2}-containing mixed phase thin film and 1

Thermoelectric properties and microstructure of Mg3Sb2

International Nuclear Information System (INIS)

Condron, Cathie L.; Kauzlarich, Susan M.; Gascoin, Franck; Snyder, G. Jeffrey

2006-01-01

Mg 3 Sb 2 has been prepared by direct reaction of the elements. Powder X-ray diffraction, thermal gravimetric, differential scanning calorimetery, and microprobe data were obtained on hot pressed samples. Single phase samples of Mg 3 Sb 2 were prepared and found to contain oxygen at the grain boundaries and to lose Mg and oxidize at temperatures above 900 K. Thermoelectric properties were characterized by Seebeck, electrical resistivity, and thermal conductivity measurements from 300 to 1023 K, and the maximum zT was found to be 0.21 at ∼875 K. - Graphical abstract: Dimensionless figure of merit for Mg 3 Sb 2 hot pressed and sintered at 873 K. The inset illustrates the crystal structure of Mg 3 Sb 2 along the [100] direction (white=Mg, black=Sb)

Phase transformation in Mg—Sb3Te thin films

International Nuclear Information System (INIS)

Li Jun-Jian; Chen Yi-Min; Nie Qiu-Hua; Lü Ye-Gang; Wang Guo-Xiang; Shen Xiang; Dai Shi-Xun; Xu Tie-Feng

2014-01-01

Mg-doped Sb 3 Te films are proposed to improve the performance of phase-change memory (PCM). We prepare Mg-doped Sb 3 Te films and investigate their crystallization behaviors, structural, optical and electrical properties. We find that Mg-doping can increase the crystallization temperature, enhance the activation energy, and improve the 10-year data retention of Sb 3 Te. Especially Mg 25.19 (Sb 3 Te)74.81 shows higher T c (∼ 190 °C) and larger E a (∼ 3.49 eV), which results in a better data retention maintaining for 10 yr at ∼ 112 °C. Moreover R a /R c value is also improved. These excellent properties make Mg—Sb—Te material a promising candidate for the phase-change memory (PCM). (special topic — international conference on nanoscience and technology, china 2013)

Effect of Native Defects on Transport Properties in Non-Stoichiometric CoSb3

Directory of Open Access Journals (Sweden)

Paula R. Realyvázquez-Guevara

2017-03-01

Full Text Available The effect of native defects originated by a non-stoichiometric variation of composition in CoSb3 on I-V curves and Hall effect was investigated. Hysteretic and a non-linear behavior of the  I-V curves at cryogenic temperatures were observed; the non-linear behavior originated from the Poole-Frenkel effect, a field-dependent ionization mechanism that lowers Coulomb barriers and increases emission of charge carriers, and the hysteresis was attributed to the drastic decrease of specific heat which produces Joule heating at cryogenic temperatures. CoSb3 is a narrow gap semiconductor and slight variation in the synthesis process can lead to either n- or p-type conduction. The Sb-deficient CoSb3 presented an n-type conduction. Using a single parabolic model and assuming only acoustic-phonon scattering the charge transport properties were calculated at 300 K. From this model, a carrier concentration of 1.18 × 1018 cm−3 and a Hall factor of 1.18 were calculated. The low mobility of charge carriers, 19.11 cm2/V·s, and the high effective mass of the electrons, 0.66 m0, caused a high resistivity value of 2.75 × 10−3 Ω·m. The calculated Lorenz factor was 1.50 × 10−8 V2/K2, which represents a decrease of 38% over the degenerate limit value (2.44 × 10−8 V2/K2.

SLUDGE MASS REDUCTION: PRIMARY COMPOSITIONAL FACTORS THAT INFLUENCE MELT RATE FOR FUTURE SLUDGE BATCH PROJECTIONS

International Nuclear Information System (INIS)

Newell, J; Miller, D; Stone, M; Pickenheim, B

2008-01-01

The Savannah River National Laboratory (SRNL) was tasked to provide an assessment of the downstream impacts to the Defense Waste Processing Facility (DWPF) of decisions regarding the implementation of Al-dissolution to support sludge mass reduction and processing. Based on future sludge batch compositional projections from the Liquid Waste Organization's (LWO) sludge batch plan, assessments have been made with respect to the ability to maintain comparable projected operating windows for sludges with and without Al-dissolution. As part of that previous assessment, candidate frits were identified to provide insight into melt rate for average sludge batches representing with and without Al-dissolution flowsheets. Initial melt rate studies using the melt rate furnace (MRF) were performed using five frits each for Cluster 2 and Cluster 4 compositions representing average without and with Al-dissolution. It was determined, however, that the REDOX endpoint (Fe 2+ /ΣFe for the glass) for Clusters 2 and 4 resulted in an overly oxidized feed which negatively affected the initial melt rate tests. After the sludge was adjusted to a more reduced state, additional testing was performed with frits that contained both high and low concentrations of sodium and boron oxides. These frits were selected strictly based on the ability to ascertain compositional trends in melt rate and did not necessarily apply to any acceptability criteria for DWPF processing. The melt rate data are in general agreement with historical trends observed at SRNL and during processing of SB3 (Sludge Batch 3)and SB4 in DWPF. When MAR acceptability criteria were applied, Frit 510 was seen to have the highest melt rate at 0.67 in/hr for Cluster 2 (without Al-dissolution), which is compositionally similar to SB4. For Cluster 4 (with Al-dissolution), which is compositionally similar to SB3, Frit 418 had the highest melt rate at 0.63 in/hr. Based on this data, there appears to be a slight advantage of the Frit

Glass frit bonding with controlled width and height using a two-step wet silicon etching procedure

Science.gov (United States)

Yifang, Liu; Daner, Chen; Liwei, Lin; Gaofeng, Zheng; Jianyi, Zheng; Lingyun, Wang; Daoheng, Sun

2016-03-01

A simple and versatile two-step silicon wet etching technique for the control of the width and height of the glass frit bonding layer has been developed to improve bonding strength and reliability in wafer-level microelectromechanical systems (MEMS) packaging processes. The height of the glass frit bonding layer is set by the design of a vertical reference wall which regulates the distance between the silicon wafer and the encapsulation capping substrate. On the other hand, the width of the bonding layer is constrained between two micro grooves which are used to accommodate the spillages of extra glass frit during the bonding process. An optimized thermal bonding process, including the formation of glass liquid, removal of gas bubbles under vacuum and the filling of voids under normal atmospheric condition has been developed to suppress the formation of the bubbles/voids. The stencil printing and pre-sintering processes for the glass frit have been characterized before the thermal bonding process under different magnitudes of bonding pressure. The bonding gap thickness is found to be equal to the height of the reference wall of 10 μm in the prototype design. The bubbles/voids are found to be suppressed effectively and the bonding strength increases from 10.2 to 19.1 MPa as compared with a conventional thermal annealing process in air. Experimentally, prototype samples are measured to have passed the high hermetic sealing leakage tests of 5  ×  10-8 atm cc s-1.

Thermoelectric properties of p-type pseudo-binary (Ag0.365Sb0.558Te) x -(Bi0.5Sb1.5Te3)1-x (x=0-1.0) alloys prepared by spark plasma sintering

International Nuclear Information System (INIS)

Cui, J.L.; Xue, H.F.; Xiu, W.J.; Jiang, L.; Ying, P.Z.

2006-01-01

In this paper, pseudo-binary (Ag 0.365 Sb 0.558 Te) x -(Bi 0.5 Sb 1.5 Te 3 ) 1- x (x=0-1.0) alloys were prepared using spark plasma sintering technique, and the composition-dependent thermoelectric properties were evaluated. Electrical conductivities range from 7.9x10 4 to 15.6x10 4 Ω -1 m -1 at temperatures of 507 and 318 K, respectively, being about 3.0 and 8.5 times those of Bi 0.5 Sb 1.5 Te 3 alloy at the corresponding temperatures. The optimal dimensionless figure of merit (ZT) of the sample with molar fraction x=0.025 reaches 1.1 at 478 K, whereas that of the ternary Bi 0.5 Sb 1.5 Te 3 alloy is 0.58 near room temperature. The results also reveal that a direct introduction of Ag 0.365 Sb 0.558 Te in the Bi-Sb-Te system is much more effective to the property improvement than naturally precipitated Ag 0.365 Sb 0.558 Te in the Ag-doped Ag-Bi-Sb-Te system. - Graphical abstract: The temperature dependence of the dimensionless thermoelectric figure of merit ZT for different (Ag 0.365 Sb 0.558 Te) x -(Bi 0.5 Sb 1.5 Te 3 ) 1- x (x=0-1.0) alloys prepared by spark plasma sintering

New sulfido antimonates of the heavy alkali metals. Synthesis, crystal structure and chemical bonding of (K/Rb/Cs){sub 3}SbS{sub 3} and Cs{sub 3}SbS{sub 4} . H{sub 2}O; Neue Sulfido-Antimonate der schweren Alkalimetalle. Synthese, Kristallstruktur und chemische Bindung von (K/Rb/Cs){sub 3}SbS{sub 3} und Cs{sub 3}SbS{sub 4} . H{sub 2}O

Energy Technology Data Exchange (ETDEWEB)

Schindler, Lisa V.; Schwarz, Michael; Roehr, Caroline [Freiburg Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie

2013-12-15

The new sulfido antimonates(III) (Rb/Cs){sub 3}SbS{sub 3} were prepared from the alkali metal sulfides Rb{sub 2}S/Cs{sub 2}S{sub 2} and elemental antimony and sulfur or Sb{sub 2}S{sub 3} at reaction temperatures of about 700 C. The known isotypic potassium compound was similarly synthesized from the elements. The structures of the light-yellow crystals were refined using single-crystal X-ray data. Both compounds are isotypic to the respective Na salt forming the Na{sub 3}AsS{sub 3} structure type (cubic, space group P2{sub 1}3, K/Rb/Cs: a = 947.21(7)/982.28(5)/1025.92(5) pm, Z = 4, R1 = 0.0159/0.0560/0.0582). The {psi}-tetrahedral SbS{sub 3}{sup 3-} anions with Sb-S bond lengths of 242 pm are arranged in a cubic face centered packing, in which the three crystallographically different A{sup +} cations occupy the tetrahedral and octahedral voids, overall exhibiting a distorted octahedral sulfur coordination. The chemical bonding and the characteristics of the stereochemically active lone electron pair have been investigated by means of FP-LAPW band structure calculations. Needle-shaped crystals of the monohydrate of the antimony(V) salt Cs{sub 3}SbS{sub 4} . H{sub 2}O were obtained from a suspension of Sb{sub 2}O{sub 3}, CsOH and elemental sulfur. Cs{sub 3}SbS{sub 4} . H{sub 2}O crystallizes in a new structure type (monoclinic, space group P2{sub 1}/c, a = 987.17(10), b = 994.83(7), c = 1600.46(14) pm, {beta} = 126.895(8) , Z = 4, R1 = 0.0234). As expected, the Sb-S distances (233.1-234.7 pm) in the nearly ideally tetrahedral anion SbS{sub 4}{sup 3-} are considerably shorter than in the antimonates(III) but match the bond lengths in the anhydrous sulfido antimonate(V) Cs{sub 3}SbS{sub 4}. Due to their similar fcc-like anion packing and the stereochemically active lone electron pair of Sb in the antimonates(III), the whole series of compounds A{sub 3}Sb{sup III,V}S{sub 3/4} shows a uniform structure relation, which is elucidated using crystallographic group

Glass-ceramics frits for high mechanical resistance glazes

International Nuclear Information System (INIS)

Gajek, M.; Lis, J.; Partyka, J.; Wojczyk, M.

2004-01-01

The obtaining and application of glass-ceramics frits for glazes were discussed by many authors. This glazes are characterized by raised mechanical parameters and chemical resistance. Factors, that determines crystallization process are initial composition, heat treatment and nucleation agents. The kind of crystalline phases, crystal habit and the content of residual glass phase play the decisive role in the strengthening of the glaze. In this paper are shown results of investigation over controlled crystallization in the ternary systems; Li 2 O-Al 2 O 3 -SiO 2 , CaO-Al 2 O 3 -SiO 2 , ZnO-Al 2 O 3 -SiO 2 , MgO-Al 2 O 3 -SiO 2 , with or without nucleation agents. (author)

Solution-Processed hybrid Sb2 S3 planar heterojunction solar cell

Science.gov (United States)

Huang, Wenxiao; Borazan, Ismail; Carroll, David

Thin-film solar cells based on inorganic absorbers permit a high efficiency and stability. Among or those absorber candidates, recently Sb2S3 has attracted extensive attention because of its suitable band gap (1.5eV ~1.7 eV) , strong optical absorption, low-cost and earth-abundant constituents. Currently high-efficiency Sb2S3 solar cells have absorber layer deposited on nanostructured TiO2 electrodes in combination with organic hole transport material (HTM) on top. However it's challenging to fill the nanostructured TiO2 layer with Sb2S3 and subsequently by HTM, this leads to uncovered surface permits charge recombination. And the existing of Sb2S3/TiO2/HTM triple interface will enhance the recombination due to the surface trap state. Therefore, a planar junction cell would not only have simpler structure with less steps to fabricate but also ideally also have a higher open circuit voltage because of less interface carrier recombination. By far there is limited research focusing on planar Sb2S3 solar cell, so the feasibility is still unclear. Here, we developed a low-toxic solution method to fabricate Sb2S3 thin film solar cell, then we studied the morphology of the Sb2S3 layer and its impact to the device performance. The best device with a structure of FTO/TiO2/Sb2S3/P3HT/Ag has PCE over 5% which is similar or higher than yet the best nanostructure devices with the same HTM. Furthermore, based on solution engineering and surface modification, we improved the Sb2S3 film quality and achieved a record PCE. .

Effects of Sb-doping on the formation of (K, Na)(Nb, Sb)O3 solid solution under hydrothermal conditions

International Nuclear Information System (INIS)

Su Likui; Zhu Kongjun; Bai Lin; Qiu Jinhao; Ji Hongli

2010-01-01

(K, Na)(Nb, Sb)O 3 (KNNS) lead-free peizoceramic powders were successfully synthesized by hydrothermal treatment at 240 o C for 8 h using the KOH, NaOH, Nb 2 O 5 and Sb 2 O 3 as raw materials. Effects of Sb-doping on the crystal structure and morphology of the as-prepared powders were investigated by powder X-ray diffraction (XRD), Raman spectra (Raman), scanning electron microscope (SEM), transmission electron microscopy (TEM) and selected area electron diffraction (SAED). The Sb element was successfully doped into the alkaline niobate perovskite structure to form crystalline (K 0.7 Na 0.3 )(Nb 0.95 Sb 0.05 )O 3 lead-free piezoelectric ceramic powder, which has a hexagonal morphology due to the aggregation growth of small grains. Phase and morphology evolutions with the reaction time were also studied, and a possible formation mechanism was proposed.

Brain imaging of serotonin 4 receptors in humans with [11C]SB207145-PET

DEFF Research Database (Denmark)

Marner, Lisbeth; Gillings, Nic; Madsen, Karine

2010-01-01

Pharmacological stimulation of the serotonin 4 (5-HT(4)) receptor has shown promise for treatment of Alzheimer's disease and major depression. A new selective radioligand, [(11)C]SB207145, for positron emission tomography (PET) was used to quantify brain 5-HT(4) receptors in sixteen healthy......(max) was in accordance with post-mortem brain studies (Spearman's r=0.83, p=0.04), and the regional binding potentials, BP(ND), were on average 2.6 in striatum, 0.42 in prefrontal cortex, and 0.91 in hippocampus. We found no effect of sex but a decreased binding with age (p=0.046). A power analysis showed that, given......-HT(4) receptor binding in human brain can be reliably assessed with [(11)C]SB207145, which is encouraging for future PET studies of drug occupancy or patients with neuropsychiatric disorders....

Characterization of Cr-doped Sb{sub 2}Te{sub 3} films and their application to phase-change memory

Energy Technology Data Exchange (ETDEWEB)

Wang, Qing; Xia, Yangyang; Zheng, Yonghui [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); University of the Chinese Academy of Sciences, Beijing, 100049 (China); Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Liu, Bo; Zhu, Min; Song, Sannian; Lv, Shilong; Cheng, Yan; Song, Zhitang; Feng, Songlin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Huo, Ruru [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Shanghaitech University, Shanghai, 200031 (China)

2015-08-15

Phase-change memory (PCM) is regarded as one of the most promising candidates for the next-generation nonvolatile memory. Its storage medium, phase-change material, has attracted continuous exploration. Along the traditional GeTe-Sb{sub 2}Te{sub 3} tie line, the binary compound Sb{sub 2}Te{sub 3} is a high-speed phase-change material matrix. However, the low crystallization temperature prevents its practical application in PCM. Here, Cr is doped into Sb{sub 2}Te{sub 3}, called Cr-Sb{sub 2}Te{sub 3} (CST), to improve the thermal stability. We find that, with increase of the Cr concentration, grains are obviously refined. However, all the CST films exhibit a single hexagonal phase as Sb{sub 2}Te{sub 3} without phase separation. Also, the Cr helps to inhibit oxidation of Sb atoms. For the selected film CST{sub 1}0.5, the resistance ratio between amorphous and crystalline states is more than two orders of magnitude; the temperature for 10-year data retention is 120.8 C, which indicates better thermal stability than GST and pure Sb{sub 2}Te{sub 3}. PCM cells based on CST{sub 1}0.5 present small threshold current/voltage (4 μA/0.67 V). In addition, the cell can be operated by a low SET/RESET voltage pulse (1.1 V/2.4 V) with 50 ns width. Thus, Cr-Sb{sub 2}Te{sub 3} with suitable composition is a promising novel phase-change material used for PCM with high speed and good thermal stability performances. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Elaboration and characterization of a KCl single crystal doped with nanocrystals of a Sb2O3 semiconductor

International Nuclear Information System (INIS)

Bouhdjer, L.; Addala, S.; Halimi, O.; Boudine, B.; Sebais, M.; Chala, A.

2013-01-01

Undoped and doped KCl single crystals have been successfully elaborated via the Czochralski (Cz) method. The effects of dopant Sb 2 O 3 nanocrystals on structural and optical properties were investigated by a number of techniques, including X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDAX) analysis, UV-visible and photoluminescence (PL) spectrophotometers. An XRD pattern of KCl:Sb 2 O 3 reveals that the Sb 2 O 3 nanocrystals are in the well-crystalline orthorhombic phase. The broadening of diffraction peaks indicated the presence of a Sb 2 O 3 semiconductor in the nanometer size regime. The shift of absorption and PL peaks is observed near 334 nm and 360 nm respectively due to the quantum confinement effect in Sb 2 O 3 nanocrystals. Particle sizes calculated from XRD studies agree fairly well with those estimated from optical studies. An SEM image of the surface KCl:Sb 2 O 3 single crystal shows large quasi-spherical of Sb 2 O 3 crystallites scattered on the surface. The elemental analysis from EDAX demonstrates that the KCl:Sb 2 O 3 single crystal is slightly rich in oxygen and a source of excessive quantities of oxygen is discussed. (semiconductor materials)

SB6.0: The 6th International meeting on Synthetic Biology, July 9-11, 2013

Energy Technology Data Exchange (ETDEWEB)

Kahl, Linda J. [BioBricks Foundation

2015-04-23

The Synthetic Biology conference series (SBx.0) is the preeminent academic meeting in synthetic biology. Organized by the BioBricks Foundation, the SBx.0 conference series brings together leading researchers, students, industry executives, and policy makers from around the world to share, consider, debate, and plan efforts to make biology easier to engineer. Historically held every two years, the SBx.0 conferences are held in alternating locations in the United States, Europe, and Asia to encourage global participation and collaboration so that the ramifications of synthetic biology research and development are most likely to be safe ethical, and beneficial. On 9-11 July 2013, the 6th installment of the synthetic biology conference series (SB6.0) was held on the campus of Imperial College London (http://sb6.biobricks.org). The SB6.0 conference was attended by over 700 people, and many more were able to participate via video digital conference (http://sb6.biobricks.org/digital-conference/). Over the course of three days, the SB6.0 conference agenda included plenary sessions, workshops, and poster presentations covering topics ranging from the infrastructure needs arising when “Systematic Engineering Meets Biological Complexity” and design-led considerations for “Connecting People and Technologies” to discussions on “Engineering Biology for New Materials,” “Assessing Risk and Managing Biocontainment,” and “New Directions for Energy and Sustainability.” The $10,150 grant awarded by the U.S. Department of Energy (DE-SC0010233) to the BioBricks Foundation was used to provide partial reimbursement for the travel expenses of leading researchers from the United States to speak at the SB6.0 conference. A total of $9,450 was used to reimburse U.S. speakers for actual expenses related to the SB6.0 conference, including airfare (economy or coach only), ground transportation, hotel, and registration fees. In addition, $700 of the grant was used to offset

A new solid solution compound with the Sr{sub 21}Mn{sub 4}Sb{sub 18} structure type. Sr{sub 13}Eu{sub 8}Cd{sub 3}Mn{sub 1}Sb{sub 18}

Energy Technology Data Exchange (ETDEWEB)

Kunz Wille, Elizabeth L.; Cooley, Joya A.; Fettinger, James C.; Kazem, Nasrin; Kauzlarich, Susan M. [California Univ., Davis, CA (United States). Dept. of Chemistry

2017-09-01

The title compound with the nominal formula, Sr{sub 13}Eu{sub 8}Cd{sub 3}Mn{sub 1}Sb{sub 18}, was synthesized by Sn-flux. Structure refinement was based on single-crystal X-ray diffractometer data. Employing the exact composition, the formula is Sr{sub 13.23}Eu{sub 7.77}Cd{sub 3.12}Mn{sub 0.88}Sb{sub 18} for the solid solution Sr{sub 21-x}Eu{sub x}Cd{sub 4-y}Mn{sub y}Sb{sub 18}. This phase adopts the Sr{sub 21}Mn{sub 4}Sb{sub 18} type structure with site preferences for both Eu and Cd. The structure crystallizes in the monoclinic system in space group C2/m and Z=4: a=18.1522(11), b=17.3096(10), c=17.7691(10) Aa, β=91.9638(8) , 6632 F{sup 2} values, 216 variables, R1=0.0254 and wR2=0.0563. Site selectivity of the elements in this new compound will be discussed in relationship with the Sr{sub 21}Mn{sub 4}Sb{sub 18} type structure and other related structure types. Temperature dependent magnetic susceptibility data reveal Curie-Weiss paramagnetism with an experimental moment of 19.3 μ{sub B}/f.u. and a Weiss constant of 0.4 K. Magnetic ordering is seen at low temperatures, with a transition temperature of 3.5 K.

Distribution, speciation and availability of antimony (Sb) in soils and terrestrial plants from an active Sb mining area

International Nuclear Information System (INIS)

Okkenhaug, Gudny; Zhu Yongguan; Luo Lei; Lei Ming; Li Xi; Mulder, Jan

2011-01-01

Here, we present one of the first studies investigating the mobility, solubility and the speciation-dependent in-situ bioaccumulation of antimony (Sb) in an active Sb mining area (Xikuangshan, China). Total Sb concentrations in soils are high (527-11,798 mg kg -1 ), and all soils, including those taken from a paddy field and a vegetable garden, show a high bioavailable Sb fraction (6.3-748 mg kg -1 ), dominated by Sb(V). Elevated concentrations in native plant species (109-4029 mg kg -1 ) underpin this. Both chemical equilibrium studies and XANES data suggest the presence of Ca[Sb(OH) 6 ] 2 , controlling Sb solubility. A very close relationship was found between the citric acid extractable Sb in plants and water or sulfate extractable Sb in soil, indicating that citric acid extractable Sb content in plants may be a better predictor for bioavailable Sb in soil than total acid digestible Sb plant content. - Highlights: → Antimony (Sb) in soils from an active Sb mining area is highly bioavailable. → Sb occurs mainly as Sb(V) in Sb mining impacted soils and plants. → Sb solubility in Sb mining impacted soils is governed by Ca[Sb(OH) 6 ] 2 . → Citric acid extractable Sb in plants and bioavailable Sb in soils are strongly correlated. - Antimony (Sb) in soils from an active Sb mining area is highly bioavailable and controlled by the solubility of calcium antimonate.

First-principles study of amorphous Ga4Sb6Te3 phase-change alloys

Science.gov (United States)

Bouzid, Assil; Gabardi, Silvia; Massobrio, Carlo; Boero, Mauro; Bernasconi, Marco

2015-05-01

First-principles molecular dynamics simulations within the density functional theory framework were performed to generate amorphous models of the Ga4Sb6Te3 phase change alloy by quenching from the melt. We find that Ga-Sb and Ga-Te are the most abundant bonds with only a minor amount of Sb-Te bonds participating to the alloy network. Ga and four-coordinated Sb atoms present a tetrahedral-like geometry, whereas three-coordinated Sb atoms are in a pyramidal configuration. The tetrahedral-like geometries are similar to those of the crystalline phase of the two binary compounds GaTe and GaSb. A sizable fraction of Sb-Sb bonds is also present, indicating a partial nanoscale segregation of Sb. Despite the fact that the composition Ga4Sb6Te3 lies on the pseudobinary Ga Sb -Sb2Te3 tie line, the amorphous network can be seen as a mixture of the two binary compounds GaTe and GaSb with intertwined elemental Sb.

Sb2S3 surface modification induced remarkable enhancement of TiO2 core/shell nanowries solar cells

International Nuclear Information System (INIS)

Meng, Xiuqing; Wang, Xiaozhou; Zhong, Mianzeng; Wu, Fengmin; Fang, Yunzhang

2013-01-01

This study presents the fabrication of a novel dye-sensitized solar cell with Sb 2 S 3 -modified TiO 2 nanowire (NW) arrays/TiO 2 nanoparticles (NP) (TiO 2(NWs) /TiO 2(NPs) /Sb 2 S 3 ) as the anodes and N719 dye as the sensitizer. A solar conversion efficiency of 4.91% at 1 sun illumination was achieved for the composite cell, which is markedly higher than the efficiency rates obtained using TiO 2 and TiO 2(NWs) /Sb 2 S 3 /TiO 2(NPs) NW cells, calculated at 2.36% and 3.11%, respectively. The improved efficiency results from the large surface area of the NPs, as well as the expansion of the light absorption region and high absorption coefficient by Sb 2 S 3 surface modification. - Graphical abstract: A novel TiO 2(NWs) /TiO 2(NPs) /Sb 2 S 3 dye sensitized solar cells (DSSCs) is fabricated, a solar conversion efficiency of 4.91 % at 1 sun illumination is achieved. Highlights: ► We fabricate sandwich structured TiO 2 dye-sensitized solar cells. ► The anode of the solar cells consist of Sb 2 S 3 modified TiO 2 nanowire arrays/TiO 2 nanopartices. ► A solar conversion efficiency of 4.91% at 1 sun illumination is achieved. ► The high efficiency results from large surface area and expanded light adsorption of the anode

Three-Dimensional Reduced Graphene Oxide Coupled with Mn3O4 for Highly Efficient Removal of Sb(III) and Sb(V) from Water.

Science.gov (United States)

Zou, Jian-Ping; Liu, Hui-Long; Luo, Jinming; Xing, Qiu-Ju; Du, Hong-Mei; Jiang, Xun-Heng; Luo, Xu-Biao; Luo, Sheng-Lian; Suib, Steven L

2016-07-20

Highly porous, three-dimensional (3D) nanostructured composite adsorbents of reduced graphene oxides/Mn3O4 (RGO/Mn3O4) were fabricated by a facile method of a combination of reflux condensation and solvothermal reactions and systemically characterized. The as-prepared RGO/Mn3O4 possesses a mesoporous 3D structure, in which Mn3O4 nanoparticles are uniformly deposited on the surface of the reduced graphene oxide. The adsorption properties of RGO/Mn3O4 to antimonite (Sb(III)) and antimonate (Sb(V)) were investigated using batch experiments of adsorption isotherms and kinetics. Experimental results show that the RGO/Mn3O4 composite has fast liquid transport and superior adsorption capacity toward antimony (Sb) species in comparison to six recent adsorbents reported in the literature and summarized in a table in this paper. Theoretical maximum adsorption capacities of RGO/Mn3O4 toward Sb(III) and Sb(V) are 151.84 and 105.50 mg/g, respectively, modeled by Langmuir isotherms. The application of RGO/Mn3O4 was demonstrated by using drinking water spiked with Sb (320 μg/L). Fixed-bed column adsorption experiments indicate that the effective breakthrough volumes were 859 and 633 mL bed volumes (BVs) for the Sb(III) and Sb(V), respectively, until the maximum contaminant level of 5 ppb was reached, which is below the maximum limits allowed in drinking water according to the most stringent regulations. The advantages of being nontoxic, highly stable, and resistant to acid and alkali and having high adsorption capacity toward Sb(III) and Sb(V) confirm the great potential application of RGO/Mn3O4 in Sb-spiked water treatment.

Influence of Ce in magnetic behaviour of CeCrSb3

International Nuclear Information System (INIS)

Inamdar, Manjusha; Thamizhavel, A.; Ramakrishnan, S.; Das, Amitabh; Prokes, Karel

2009-01-01

RCrSb 3 (R = rare earth ion) presents us a system to study magnetic interplay of d moments of Cr and f moments of rare earth ions. These compounds crystallize in orthorhombic structure, space group Pbcm. The crystal structure is highly anisotropic, with a axes being twice as long as band c. It has quasi two dimensional structure with layers of RSb and CrSb 2 stacked along a axis. Cr is surrounded by Sb ions forming face(edge) sharing octahedra along c(b) axes. The dual magnetic transitions exhibited by Cr in LaCrSb 3 , arouses interest in RCrSb 3 series. LaCrSb 3 undergoes FM transition below 123 K and on further lowering of temperature exhibits an AFM transition below 100 K with moments oriented along c axes. The AFM phase vanishes with application of small field of 1kOe. The coexistence of FM exchange along b and a axes with AFM exchange along c axis below 100 K is interesting. However, the magnetization along a axis is very small

Oxidation of 1-butene over uranium oxide (UO3)-antimony oxide (Sb2O3) catalysts

NARCIS (Netherlands)

Simons, T.; Houtman, P.N.; Schuit, G.C.A.

1971-01-01

The oxidative dehydrogenation of butene to butadiene over U-Sb catalysts was investigated. The presence of two compds., (UO2)Sb3O7 and Sb3U3O14, reported by Grasselli and Callahan (1969), was confirmed with (UO2)Sb3O7 being the actual catalyst. The reaction is first order in butene and zero order in

Crystal structure and bonding characteristics of In-doped β-Zn4Sb3

International Nuclear Information System (INIS)

Tang, Dingguo; Zhao, Wenyu; Cheng, Sudan; Wei, Ping; Yu, Jian; Zhang, Qingjie

2012-01-01

The effects of indium impurity on the crystal structure and bonding characteristics of In-doped β-Zn 4 Sb 3 were investigated by powder X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The XRD Rietveld refinement indicates that the indium impurity preferentially substitutes one of Sb atoms in Sb–Sb dimer at the 12c Sb(2) site and simultaneously leads to the increase of Zn occupancy. The observations of binding energy shift and a new valence state in Sb 3d core-level XPS spectra can be attributed to the charge transfer from In and Zn to Sb. As a result, more electropositive Zn atoms are needed to maintain the charge balance. The reduction of the lattice thermal conductivity is ascribed to the formation of the asymmetric Sb–In bond, resulting in much low lattice thermal conductivity of 0.49 W −1 K −1 of Zn 4 Sb 2.96 In 0.04 . - Graphical abstract: The indium impurity substitutes one of Sb atoms in Sb–Sb dimer, resulting the charge transfer from In to Sb, which leads to the binding energy of Sb 3d core level XPS spectra shift to low value. Highlights: ► The indium impurity preferentially substitutes one of Sb atoms in Sb–Sb dimer at the 12c Sb(2) site. ► The occupancy of Zn increases by the In substitution for Sb, whereas that of Sb keeps constant. ► The binding energy of Sb 3d shifts to low value. ► The charge transfer occurs from In and Zn to Sb.

Solid state compatibility in the ZnO-rich region of ZnO-Bi2O3-Sb2O3 and ZnO-Bi2O3-Sb2O5 systems

Directory of Open Access Journals (Sweden)

Jardiel, T.

2010-04-01

Full Text Available The obtaining of ZnO-Bi2O3-Sb2O3 (ZBS based varistor thick films with high non-linear properties is constrained by the bismuth loss by vaporization that takes place during the sintering step of these ceramics, a process which is yet more critical in the thick film geometry due to its inherent high are/volume ratio. This volatilization can be controlled to a certain extent by modifying the proportions of the Bi and/or Sb precursors. Obviously this requires a clear knowledge of the different solid state compatibilities in the mentioned ZBS system. In this sense a detailed study of the thermal evolution of the ZnO-Bi2O3-Sb2O3 and ZnO-Bi2O3-Sb2O5 systems in the ZnO-rich region of interest for varistors, is presented in this contribution. A different behaviour is observed when using Sb2O3 or Sb2O5 as starting precursor, which should be attributed to the oxidation process experimented by Sb2O3 compound during the heating. On the other hand the use of high amounts of Bi in the starting formulation leads to the formation of a liquid phase at lower temperatures, which would allow the use of lower sintering temperatures.La obtención de varistors en lámina gruesa basados en ZnO-Bi2O3-Sb2O3 (ZBS y con propiedades altamente no-lineales está limitada por la perdida de bismuto por volatilización durante la sinterización de estos cerámicos, un proceso que es todavía más crítico en la geometría de lámina gruesa debido a su elevada relación área/volumen inherente. Dicha volatilización puede ser no obstante controlada hasta cierta extensión modificando las proporciones de los precursores de Bi y/o Sb. Obviamente ello conlleva un amplio conocimiento de las diferentes compatibilidades en estado sólido en el mencionado sistema ZBS. En este sentido, en la presente contribución se presenta un estudio detallado de la evolución térmica de los sistemas ZnO-Bi2O3-Sb2O3 y ZnO-Bi2O3-Sb2O5 en la región rica en ZnO de interés para varistores. Como

The Osmium(VIII) Oxofluoro Cations OsO(2)F(3)(+) and F(cis-OsO(2)F(3))(2)(+): Syntheses, Characterization by (19)F NMR Spectroscopy and Raman Spectroscopy, X-ray Crystal Structure of F(cis-OsO(2)F(3))(2)(+)Sb(2)F(11)(-), and Density Functional Theory Calculations of OsO(2)F(3)(+), ReO(2)F(3), and F(cis-OsO(2)F(3))(2)(+).

Science.gov (United States)

Casteel, William J.; Dixon, David A.; Mercier, Hélène P. A.; Schrobilgen, Gary J.

1996-07-17

Osmium dioxide tetrafluoride, cis-OsO(2)F(4), reacts with the strong fluoride ion acceptors AsF(5) and SbF(5) in anhydrous HF and SbF(5) solutions to form orange salts. Raman spectra are consistent with the formation of the fluorine-bridged diosmium cation F(cis-OsO(2)F(3))(2)(+), as the AsF(6)(-) and Sb(2)F(11)(-) salts, respectively. The (19)F NMR spectra of the salts in HF solution are exchange-averaged singlets occurring at higher frequency than those of the fluorine environments of cis-OsO(2)F(4). The F(cis-OsO(2)F(3))(2)(+)Sb(2)F(11)(-) salt crystallizes in the orthorhombic space group Imma. At -107 degrees C, a = 12.838(3) Å, b = 10.667(2) Å, c = 11.323(2) Å, V = 1550.7(8) Å(3), and Z = 4. Refinement converged with R = 0.0469 [R(w) = 0.0500]. The crystal structure consists of discrete fluorine-bridged F(cis-OsO(2)F(3))(2)(+) and Sb(2)F(11)(-) ions in which the fluorine bridge of the F(cis-OsO(2)F(3))(2)(+) cation is trans to an oxygen atom (Os-O 1.676 Å) of each OsO(2)F(3) group. The angle at the bridge is 155.2(8) degrees with a bridging Os---F(b) distance of 2.086(3) Å. Two terminal fluorine atoms (Os-F 1.821 Å) are cis to the two oxygen atoms (Os-O 1.750 Å), and two terminal fluorine atoms of the OsO(2)F(3) group are trans to one another (1.813 Å). The OsO(2)F(3)(+) cation was characterized by (19)F NMR and by Raman spectroscopy in neat SbF(5) solution but was not isolable in the solid state. The NMR and Raman spectroscopic findings are consistent with a trigonal bipyramidal cation in which the oxygen atoms and a fluorine atom occupy the equatorial plane and two fluorine atoms are in axial positions. Density functional theory calculations show that the crystallographic structure of F(cis-OsO(2)F(3))(2)(+) is the energy-minimized structure and the energy-minimized structures of the OsO(2)F(3)(+) cation and ReO(2)F(3) are trigonal bipyramidal having C(2)(v)() point symmetry. Attempts to prepare the OsOF(5)(+) cation by oxidative fluorination of cis

Sb2S3:C/CdS p-n junction by laser irradiation

International Nuclear Information System (INIS)

Arato, A.; Cardenas, E.; Shaji, S.; O'Brien, J.J.; Liu, J.; Castillo, G. Alan; Das Roy, T.K.; Krishnan, B.

2009-01-01

In this paper, we report laser irradiated carbon doping of Sb 2 S 3 thin films and formation of a p-n junction photovoltaic structure using these films. A very thin carbon layer was evaporated on to chemical bath deposited Sb 2 S 3 thin films of approximately 0.5 μm in thickness. Sb 2 S 3 thin films were prepared from a solution containing SbCl 3 and Na 2 S 2 O 3 at 27 deg. C for 5 h and the films obtained were highly resistive. These C/Sb 2 S 3 thin films were irradiated by an expanded laser beam of diameter approximately 0.5 cm (5 W power, 532 nm Verdi laser), for 2 min at ambient atmosphere. Morphology and composition of these films were analyzed. These films showed p-type conductivity due to carbon diffusion (Sb 2 S 3 :C) by the thermal energy generated by the absorption of laser radiation. In addition, these thin films were incorporated in a photovoltaic structure Ag/Sb 2 S 3 :C/CdS/ITO/Glass. For this, CdS thin film of 50 nm in thickness was deposited on a commercially available ITO coated glass substrate from a chemical bath containing CdCl 2 , sodium citrate, NH 4 OH and thiourea at 70 deg. C . On the CdS film, Sb 2 S 3 /C layers were deposited. This multilayer structure was subjected to the laser irradiation, C/Sb 2 S 3 side facing the beam. The p-n junction formed by p-Sb 2 S 3 :C and n-type CdS showed V oc = 500 mV and J sc = 0.5 mA/cm 2 under illumination by a tungsten halogen lamp. This work opens up a new method to produce solar cell structures by laser assisted material processing

In Vivo Stabilized SB3, an Attractive GRPR Antagonist, for Pre- and Intra-Operative Imaging for Prostate Cancer.

Science.gov (United States)

Bakker, Ingrid L; van Tiel, Sandra T; Haeck, Joost; Doeswijk, Gabriela N; de Blois, Erik; Segbers, Marcel; Maina, Theodosia; Nock, Berthold A; de Jong, Marion; Dalm, Simone U

2018-03-19

The gastrin-releasing peptide receptor (GRPR), overexpressed on various tumor types, is an attractive target for receptor-mediated imaging and therapy. Another interesting approach would be the use of GRPR radioligands for pre-operative imaging and subsequent radio-guided surgery, with the goal to improve surgical outcome. GRPR radioligands were successfully implemented in clinical studies, especially Sarabesin 3 (SB3) is an appealing GRPR antagonist with high receptor affinity. Gallium-68 labeled SB3 has good in vivo stability, after labeling with Indium-111; however, the molecule shows poor in vivo stability, which negatively impacts tumor-targeting capacity. A novel approach to increase in vivo stability of radiopeptides is by co-administration of the neutral endopeptidase (NEP) inhibitor, phosphoramidon (PA). We studied in vivo stability and biodistribution of [ 111 In]SB3 without/with (-/+) PA in mice. Furthermore, SPECT/MRI on a novel, state-of-the-art platform was performed. GRPR affinity of SB3 was determined on PC295 xenograft sections using [ 125 I]Tyr 4 -bombesin with tracer only or with increasing concentrations of SB3. For in vivo stability, mice were injected with 200/2000 pmol [ 111 In]SB3 -/+ 300 μg PA. Blood was collected and analyzed. Biodistribution and SPECT/MRI studies were performed at 1, 4, and 24 h postinjection (p.i.) of 2.5 MBq/200 pmol or 25 MBq/200 pmol [ 111 In]SB3 -/+ 300 μg PA in PC-3-xenografted mice. SB3 showed high affinity for GRPR (IC 50 3.5 nM). Co-administration of PA resulted in twice higher intact peptide in vivo vs [ 111 In]SB3 alone. Biodistribution studies at 1, 4, and 24 h p.i. show higher tumor uptake values with PA co-administration (19.7 ± 3.5 vs 10.2 ± 1.5, 17.6 ± 5.1 vs 8.3 ± 1.1, 6.5 ± 3.3 vs 3.1 ± 1.9 % ID/g tissue (P < 0.0001)). Tumor imaging with SPECT/MRI clearly improved after co-injection of PA. Co-administration of PA increased in vivo tumor targeting capacity of

Frit screening for Rocky Flats ash and sand, slag, and crucible vitrification

International Nuclear Information System (INIS)

Vienna, J.D.; Li, Hong; Darab, J.G.

1997-06-01

Pacific Northwest National Laboratory (PNNL) is developing vitrified waste forms for plutonium-bearing ash and plutonium-bearing sand, slag, and crucible (SS ampersand C) materials from Rocky Flats. Waste forms are to meet product criteria (e.g., safeguard termination limits, storage criteria, and target plutonium loading) and processing constraints (e.g., upper temperature limits, processing time, and equipment compatibility). The target waste form for ash is an agglomerated product, while that for SS ampersand C is a fully encapsulated product. Laboratory scoping studies were conducted on glass formulations from six different glass families: (1) antimony vanadium phosphate, (2) iron vanadium phosphate, (3) tin zinc phosphate, (4) soda-lime silicate, (5) alkali borosilicate, and (6) alkali borate. Glass families were selected due to viscosity behavior in the temperature range of interest (< 800C). Scoping study tests included gradient furnace tests to determine processing range and sintering temperature, thermogravimetric analysis to determine weight loss as a function of temperature, and crucible tests to determine frit compositions tolerance to variations in processing temperature, waste loading, and waste type. The primary screening criterion for the selection of frits for future studies was processing temperature below 400C to minimize the potential for foaming in ash caused by the release of gases (main source of gas is combustion of carbon species) and to minimize processing cycle times. Based on this criterion, glass formulations from the tin zinc phosphate and alkali borosilicate families were selected for future variability testing. Variability testing will include final product evaluation, glass system tolerance to waste loading and composition variation, and identification of parameters impacting time/temperature profiles. Variability testing results will give a final frit formulation for ash and SS ampersand C, and identify key processing parameters

High pressure monoclinic phases of Sb{sub 2}Te{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Souza, S.M.; Poffo, C.M.; Triches, D.M. [Departamento de Engenharia Mecanica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, S/N, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Lima, J.C. de, E-mail: fsc1jcd@fisica.ufsc.br [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, S/N, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Grandi, T.A. [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, S/N, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Polian, A.; Gauthier, M. [Physique des Milieux Denses, IMPMC, CNRS-UMR 7590, Universite Pierre et Marie Curie-Paris 6, 4 Place Jussieu, 75252 Paris Cedex 05 (France)

2012-09-15

The effect of pressure on nanostructured rhombohedral {alpha}-Sb{sub 2}Te{sub 3} (phase I) was investigated using X-ray diffraction (XRD) and Raman spectroscopy (RS) up to 19.2 and 25.5 GPa, respectively. XRD patterns showed two new high pressure phases (named phases II and III). From a Rietveld refinement of XRD patterns of {alpha}-Sb{sub 2}Te{sub 3}, the unit cell volume as a function of pressure was obtained and the values were fitted to a Birch-Murnaghan equation of state (BM-EOS). The best fit was obtained for bulk modulus B{sub 0}=36.1{+-}0.9 GPa and its derivative B{sub 0}{sup Prime }=6.2{+-}0.4 (not fixed). Using the refined structural data for {alpha}-Sb{sub 2}Te{sub 3}, for pressures up to 9.8 GPa, changes in the angle of succession [Te-Sb-Te-Sb-Te], in the interaromic distances of Sb and Te atoms belonging to this angle of succession and in the interatomic distances of atoms located on the c axis were examined. This analysis revealed an electronic topological transition (ETT) along the a and c axes at close to 3.7 GPa. From the RS spectra, the full widths at half maximum (FWHM) of the Raman active modes of {alpha}-Sb{sub 2}Te{sub 3} were plotted as functions of pressure and showed an ETT along the a and c axes at close to 3.2 GPa. The XRD patterns of phases II and III were well reproduced assuming {beta}-Bi{sub 2}Te{sub 3} and {gamma}-Bi{sub 2}Te{sub 3} structures similar to those reported in the literature for {alpha}-Bi{sub 2}Te{sub 3}.

Amorphous-to-crystalline transition in Ge{sub 8}Sb{sub (2-x)}Bi{sub x}Te{sub 11} phase-change materials for data recording

Energy Technology Data Exchange (ETDEWEB)

Svoboda, Roman, E-mail: roman.svoboda@upce.cz [Department of Physical Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 532 10 Pardubice (Czech Republic); Karabyn, Vasyl [Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 532 10 Pardubice (Czech Republic); Málek, Jiří [Department of Physical Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 532 10 Pardubice (Czech Republic); Frumar, Miloslav [Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 532 10 Pardubice (Czech Republic); Beneš, Ludvík; Vlček, Milan [Joint Laboratory of Solid State Chemistry of Institute of Macromolecular Chemistry of the Academy of Sciences of the Czech Republic v.v.i. and the University of Pardubice 532 10 Pardubice (Czech Republic)

2016-07-25

Structural and thermokinetic analyses were used to study the crystallization behavior of Ge{sub 8}Sb{sub (2-x)}Bi{sub x}Te{sub 11}thin films, promising materials for phase-change memory recording applications. By exploring the full compositional range, it was found that the Sb→Bi substitution leads to a decrease of crystallization enthalpy and activation energy of the main crystallization phase-change process. These trends were explained in terms of the changing structural ordering within the recently proposed new phase-change atomic switching mechanism. All of the compositions exhibited very similar transformation kinetics, confirming the uniformity of the phase-change mechanisms involved. It was further shown that rapid energy delivery achieved during heating, in the case of all investigated materials, leads to a transition from the classical nucleation/growth-based formation of 3D crystallites towards an autocatalytic phase-change process with an enormously increased speed of crystallization. Rapidity of the crystallization process was quantified for all of the studied compositions based on a novel Index of Crystallization Rapidity criterion – the results provided by this criterion showed that the highest crystallization speed was produced by the Ge{sub 8}Sb{sub 0.8}Bi{sub 1.2}Te{sub 11} composition, which therefore from this point of view appears to be a suitable candidate for the new generation of phase-change memory recording devices. - Highlights: • Crystallization behavior of Ge{sub 8}Sb{sub (2-x)}Bi{sub x}Te{sub 11} thin films was studied by DSC. • Sb → Bi substitution leads to a decrease of crystallization enthalpy and activation energy. • All compositions exhibited very similar transformation kinetics. • Rapidity of the crystallization process was quantified for the studied compositions. • Highest crystallization speed was produced by the Ge{sub 8}Sb{sub 0.8}Bi{sub 1.2}Te{sub 11} composition.

Tunable surface wettability and water adhesion of Sb2S3 micro-/nanorod films

International Nuclear Information System (INIS)

Zhong, Xin; Zhao, Huiping; Yang, Hao; Liu, Yunling; Yan, Guoping; Chen, Rong

2014-01-01

Antimony sulfide (Sb 2 S 3 ) films were successfully prepared by spin coating Sb 2 S 3 micro-/nanorods with different sizes on glass slides, which was synthesized via a facile and rapid microwave irradiation method. The prepared Sb 2 S 3 micro-/nanorods and films were characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and water contact angle (CA). The as-prepared Sb 2 S 3 films exhibited different surface wettabilities ranging from superhydrophilicity to superhydrophobicity, which was strongly dependent on the diameter of Sb 2 S 3 micro-/nanorod. Sb 2 S 3 film made by nanorods possessed superhydrophobic surface and high water adhesive property. After surface modification with stearic acid, the superhydrophobic surface exhibited an excellent self-cleaning property owing to its low adhesive force. The clarification of three possible states including Wenzel's state, “Gecko” state and Cassie's state for Sb 2 S 3 film surfaces was also proposed to provide a better understanding of interesting surface phenomena on Sb 2 S 3 films.

Enhanced photovoltaic performance of Sb2S3-sensitized solar cells through surface treatments

Science.gov (United States)

Ye, Qing; Xu, Yafeng; Chen, Wenyong; Yang, Shangfeng; Zhu, Jun; Weng, Jian

2018-05-01

Efficient antimony sulfide (Sb2S3)-sensitized solar cells were obtained by a sequential treatment with thioacetamide (TA) and 1-decylphosphonic acid (DPA). Compared with the untreated Sb2S3-sensitized solar cells, the power conversion efficiency of the treated Sb2S3 solar cells was improved by 1.80% to 3.23%. The TA treatment improved the Sb2S3 films by reducing impurities and decreasing the film's surface defects, which inhibited the emergence of recombination centers. The DPA treatment reduced the recombination between hole transport materials (HTMs) and the Sb2S3. Therefore, we have presented an efficient strategy to improve the performance of Sb2S3-sensitized solar cells.

Electrical conduction of glasses in the system Fe2O3-Sb2O3-TeO2; Fe2O3-Sb2O3-TeO2 kei garasu no denki dendo

Energy Technology Data Exchange (ETDEWEB)

Qiu, Honghua; Mori, H; Sakata, H; Hirayama, T [Tokai Univ., Tokyo (Japan). Faculty of Engineering

1995-01-01

In this study, taking into consideration that TeO2 is a component of the glass network and Sb2O3 shows the redox effect in the glasses reducing its possibility of transformation of Sb{sup 3+} to Sb{sup 5+} as well as glass basicity, highly conductive tellurite based glasses have been prepared by the press-quenching method selecting the Fe2O3-Sb2O3-TeO2 system, and the electroconductive mechanism of the glasses has been examined by measuring its D.C. conductivity {sigma}. Part of the obtained information is as follows; the glass formation range of the Fe2O3-Sb2O3-TeO2 system has been 0 {le} Fe2O3 {le} 15mol%, 0 {le} Sb2O3 {le} 18mol% and 78 {le} TeO2 {le} 100mol% and about 15mol% of the additional amount of Fe2O3 has been the limit of glass formation. As the amount of Fe2O3 has increased, C{sub Fe} has also increased and with this, the linear electroconductivity of the glasses has increased from 1.86 {times} 10{sup -7}S{center_dot}cm{sup -1} to 1.62 {times} 10{sup -6}S{center_dot}cm{sup -1} and the glasses have been confirmed as the n-type semiconductor. The factor determining {sigma} of the glasses has been C{sub Fe} which has increased as the amount of Fe2O3 has increased. 34 refs., 8 figs., 2 tabs.

Atomistic explanation of brittle failure of thermoelectric skutterudite CoSb3

International Nuclear Information System (INIS)

Li, Guodong; An, Qi; Goddard, William A.; Hanus, Riley; Zhai, Pengcheng; Zhang, Qingjie; Snyder, G. Jeffrey

2016-01-01

CoSb 3 based skutterudite thermoelectric material has superior thermoelectric properties, but the low fracture toughness prevents its widespread commercial application. To determine the origin of its brittle failure, we examined the response of shear deformation in CoSb 3 along the most plausible slip system (010)/<100>, using large-scale molecular dynamics simulations. We find that the brittle failure of CoSb 3 arises from the formation of shear bands due to the destruction of Sb4-rings and the slippage of Co-octahedraes. This leads to the breakage of Co-octahedraes and cavitation, resulting in the crack opening and mechanical failure.

Metallization for Yb14MnSb11-Based Thermoelectric Materials

Science.gov (United States)

Firdosy, Samad; Li, Billy Chun-Yip; Ravi, Vilupanur; Sakamoto, Jeffrey; Caillat, Thierry; Ewell, Richard C.; Brandon, Erik J.

2011-01-01

Thermoelectric materials provide a means for converting heat into electrical power using a fully solid-state device. Power-generating devices (which include individual couples as well as multicouple modules) require the use of ntype and p-type thermoelectric materials, typically comprising highly doped narrow band-gap semiconductors which are connected to a heat collector and electrodes. To achieve greater device efficiency and greater specific power will require using new thermoelectric materials, in more complex combinations. One such material is the p-type compound semiconductor Yb14MnSb11 (YMS), which has been demonstrated to have one of the highest ZT values at 1,000 C, the desired operational temperature of many space-based radioisotope thermoelectric generators (RTGs). Despite the favorable attributes of the bulk YMS material, it must ultimately be incorporated into a power-generating device using a suitable joining technology. Typically, processes such as diffusion bonding and/or brazing are used to join thermoelectric materials to the heat collector and electrodes, with the goal of providing a stable, ohmic contact with high thermal conductivity at the required operating temperature. Since YMS is an inorganic compound featuring chemical bonds with a mixture of covalent and ionic character, simple metallurgical diffusion bonding is difficult to implement. Furthermore, the Sb within YMS readily reacts with most metals to form antimonide compounds with a wide range of stoichiometries. Although choosing metals that react to form high-melting-point antimonides could be employed to form a stable reaction bond, it is difficult to limit the reactivity of Sb in YMS such that the electrode is not completely consumed at an operating temperature of 1,000 C. Previous attempts to form suitable metallization layers resulted in poor bonding, complete consumption of the metallization layer or fracture within the YMS thermoelement (or leg).

Structural and physical properties of Mg3-xZnxSb2 (x=0-1.34)

International Nuclear Information System (INIS)

Ahmadpour, Faraz; Kolodiazhnyi, Taras; Mozharivskyj, Yurij

2007-01-01

The Mg 3-x Zn x Sb 2 phases with x=0-1.34 were prepared by direct reactions of the elements in tantalum tubes. According to the X-ray single crystal and powder diffraction, the Mg 3-x Zn x Sb 2 phases crystallize in the same P3-bar m1 space group as the parent Mg 3 Sb 2 phase. The Mg 3-x Zn x Sb 2 structure is different from the other substituted structures of Mg 3 Sb 2 , such as (Ca, Sr, Ba) Mg 2 Sb 2 or Mg 5.23 Sm 0.77 Sb 4 , in a way that in Mg 3-x Zn x Sb 2 the Mg atoms on the tetrahedral sites are replaced, while in the other structures Mg on the octahedral sites is replaced. Thermoelectric performance for the two members of the series, Mg 3 Sb 2 and Mg 2.36 Zn 0.64 Sb 2 , was evaluated from low to room temperatures through resistivity, Seebeck coefficient and thermal conductivity measurements. In contrast to Mg 3 Sb 2 which is a semiconductor, Mg 2.36 Zn 0.64 Sb 2 is metallic and exhibits an 18-times larger dimensionless figure-of-merit, ZT, at room temperature. However, thermoelectric performance of Mg 2.36 Zn 0.64 Sb 2 is still poor and it is mostly due to its large electrical resistivity. - Graphical abstract: The Mg atoms in Mg 3 Sb 2 were successfully substituted with Zn, with Zn going exclusively into the tetrahedral sites. Zn substitution increases the electrical conductivity in Mg 2.36 Zn 0.64 Sb 2 by closing the band gap. This change combined with a decrease in the thermal conductivity improves the ZT value

Direct synthesis of Sb{sub 2}O{sub 3} nanoparticles via hydrolysis-precipitation method

Energy Technology Data Exchange (ETDEWEB)

Hu, Yuehua [Department of Inorganic Materials, School of Resources Processing and Bioengineering, Central South University, Changsha 410083 (China); Zhang, Huihui [Department of Inorganic Materials, School of Resources Processing and Bioengineering, Central South University, Changsha 410083 (China); Yang, Huaming [Department of Inorganic Materials, School of Resources Processing and Bioengineering, Central South University, Changsha 410083 (China)]. E-mail: hmyang@mail.csu.edu.cn

2007-01-31

Antimony oxide (Sb{sub 2}O{sub 3}) has wide applications as conductive materials, effective catalyst, functional filler and optical materials. Nanocrystalline Sb{sub 2}O{sub 3} has been successfully synthesized by hydrolysis-precipitation method. The samples were characterized by means of transmission electron microscopy (TEM), high-resolution TEM (HRTEM) images, X-ray diffraction (XRD) and differential thermal analysis (DTA). The average crystal size of the Sb{sub 2}O{sub 3} nanoparticles increases with increasing the reaction temperature. TEM image of the as-synthesized nanocrystalline Sb{sub 2}O{sub 3} shows rod-like structure. HRTEM images indicate a preferred directional growth of the Sb{sub 2}O{sub 3} nanoparticles. The electrochemical behaviors of Sb{sub 2}O{sub 3} electrodes have been primarily investigated by cyclic voltammetry (CV) in lithium hexafluorophosphate (LiPF{sub 6}) solution. Sb{sub 2}O{sub 3} nanocrystallite phase has prominent effect on the electrochemical properties. The results indicate that nanocrystalline Sb{sub 2}O{sub 3} synthesized by hydrolysis-precipitation method shows potential application in the field of the electrode materials.

Crystal and magnetic study of the disordered perovskites Ca(Mn0.5Sb0.5)O3 and Ca(Fe0.5Sb0.5)O3

International Nuclear Information System (INIS)

Retuerto, M.; Martinez-Lope, M.J.; Garcia-Hernandez, M.; Munoz, A.; Fernandez-Diaz, M.T.; Alonso, J.A.

2010-01-01

We have investigated the double perovskites Ca 2 MSbO 6 (M = Mn, Fe) that have been prepared by solid-state reaction (M = Fe) and wet chemistry procedures (M = Mn). The crystal and magnetic structures have been studied from X-ray (XRD) and neutron powder diffraction (NPD) data. Rietveld refinements show that the crystal structures are orthorhombic (space group Pbnm) with complete disorder of M and Sb cations, so the formula should be rewritten as Ca(M 0.5 Sb 0.5 )O 3 . Due to this disorder no evidences of Jahn-Teller distortion can be observed in the MnO 6 octahedra of Ca(Mn 0.5 Sb 0.5 )O 3 , in contrast with the ordered double perovskite Sr 2 MnSbO 6 . Ca(Fe 0.5 Sb 0.5 )O 3 behaves as an antiferromagnet with an ordered magnetic moment for Fe 3+ of 1.53(4)μ B and a propagation vector k = 0, as investigated by low-temperature NPD. The antiferromagnetic ordering is a result of the high degree of Fe/Sb anti-site disorder of the sample, which originates the spontaneous formation of Fe-rich islands, characterized by the presence of strong Fe-O-Fe antiferromagnetic couplings with enough long-range coherence to produce a magnetic contribution perceptible by NPD. By contrast, the magnetic structure of Ca(Mn 0.5 Sb 0.5 )O 3 cannot be observed by low-temperature NPD because the magnitude of the ordered magnetic moments is below the detection threshold for neutrons.

On Some Physical Properties of GeSe3-Sb2Se3-ZnSe Thin Films and Their Radiation Response

International Nuclear Information System (INIS)

Hosni, H.M.M.A.

2010-01-01

Thin films of the chalcogenides GeSe 3 , Sb 2 Se 3 , ZnSe, (GeSe 3 )80(Sb 2 Se 3 )20 and (GeSe 3 )70(Sb 2 Se 3 )10(ZnSe)20, are prepared by thermal evaporation onto glass substrates. The effect of ZnSe incorporation with both GeSe 3 , Sb 2 Se 3 results in amorphous (GeSe 3 )70(Sb 2 Se 3 )10(ZnSe)20 composition as obtained from the X-ray analysis. Electrical measurements reveal a decrease in dc activation energy, ΔEdc, and an increase in ac activation energy, ΔEac, for (GeSe 3 )70(Sb 2 Se 3 )10(ZnSe)20 as compared with (GeSe 3 )80(Sb 2 Se 3 )20. Optical energy gap, Eg, and band tail width, Ee, are estimated in UV/VIS spectral region for fresh and γ-irradiated films, revealing a decrease in Eg and an increase in Ee for ZnSe and (GeSe 3 )70(Sb 2 Se 3 )10(ZnSe)20 compositions, with irradiation dose.

Low-Temperature Bonding of Bi0.5Sb1.5Te3 Thermoelectric Material with Cu Electrodes Using a Thin-Film In Interlayer

Science.gov (United States)

Lin, Yan-Cheng; Yang, Chung-Lin; Huang, Jing-Yi; Jain, Chao-Chi; Hwang, Jen-Dong; Chu, Hsu-Shen; Chen, Sheng-Chi; Chuang, Tung-Han

2016-09-01

A Bi0.5Sb1.5Te3 thermoelectric material electroplated with a Ni barrier layer and a Ag reaction layer was bonded with a Ag-coated Cu electrode at low temperatures of 448 K (175 °C) to 523 K (250 °C) using a 4- μm-thick In interlayer under an external pressure of 3 MPa. During the bonding process, the In thin film reacted with the Ag layer to form a double layer of Ag3In and Ag2In intermetallic compounds. No reaction occurred at the Bi0.5Sb1.5Te3/Ni interface, which resulted in low bonding strengths of about 3.2 MPa. The adhesion of the Bi0.5Sb1.5Te3/Ni interface was improved by precoating a 1- μm Sn film on the surface of the thermoelectric element and preheating it at 523 K (250 °C) for 3 minutes. In this case, the bonding strengths increased to a range of 9.1 to 11.5 MPa after bonding at 473 K (200 °C) for 5 to 60 minutes, and the shear-tested specimens fractured with cleavage characteristics in the interior of the thermoelectric material. The bonding at 448 K (175 °C) led to shear strengths ranging from 7.1 to 8.5 MPa for various bonding times between 5 and 60 minutes, which were further increased to the values of 10.4 to 11.7 MPa by increasing the bonding pressure to 9.8 MPa. The shear strengths of Bi0.5Sb1.5Te3/Cu joints bonded with the optimized conditions of the modified solid-liquid interdiffusion bonding process changed only slightly after long-term exposure at 473 K (200 °C) for 1000 hours.

Synthesis, characterization and photovoltaic properties of Mn-doped Sb2S3 thin film

Directory of Open Access Journals (Sweden)

Horoz Sabit

2018-03-01

Full Text Available Synthesis and characterization of Mn-doped Sb2S3 thin films (TFs prepared by chemical bath deposition (CBD at room temperature have been documented and their structural, optical, morphological, magnetic and photovoltaic properties have been examined for the first time. Their structural properties reveal that the Mn-doped Sb2S3 TF has an orthorhombic phase structure of Sb2S3, and that the grain size of the Mn-doped Sb2S3 TF (72.9 nm becomes larger than that of undoped Sb2S3 TF (69.3 nm. It has been observed that Mn content causes the Sb2S3 TF band gap to decrease. This situation clearly correlates with band tailing due to the impurities that are involved. The morphological properties have revealed that the shape of the Mn-doped Sb2S3 TF is more uniform than the shape of its undoped counterpart. The study on its magnetic properties has demonstrated that the Mn-doped Sb2S3 TF exhibits paramagnetic behavior. Its paramagnetic Curie-Weiss temperature was found to be -4.1 K. This result suggests that there is an anti-ferromagnetic interaction between Mn moments in the Mn-doped Sb2S3 TF. Incident photon to electron conversion efficiency (IPCE and J-V measurements were also carried out for the Mn-doped Sb2S3 TF for the first time. The results have indicated that the Mn-doped Sb2S3 TF can be utilized as a sensitizer to improve the performance of solar cells. Another important observation on the photovoltaic properties of Mn-doped Sb2S3 TF is that the spectral response range is wider than that of undoped Sb2S3 TF. Our study suggests that the introduction of dopant could serve as an effective means of improving the device performance of solar cells.

Thermoelectric properties of quaternary (Bi,Sb)2(Te,Se)3 compound

International Nuclear Information System (INIS)

Lu, Pengfei; Li, Yiluan; Wu, Chengjie; Yu, Zhongyuan; Cao, Huawei; Zhang, Xianlong; Cai, Ningning; Zhong, Xuxia; Wang, Shumin

2014-01-01

Highlights: • Sb and Se spin–orbit coupling play a key role in the band structure. • Substituted Bi/Sb and Te/Se have a limited impact on the transport coefficients. • n-Type doping will be preferred for quaternary (Bi,Sb) 2 (Te,Se) 3 compound. -- Abstract: The quaternary (Bi,Sb) 2 (Te,Se) 3 compounds are investigated using first-principles study and Boltzmann transport theory. The energy band structure and density of states are studied in detail. The electronic transport coefficients are then calculated as a function of chemical potential. The figure of merit ZT is obtained assuming a constant relaxation time and an averaged thermal conductivity. Our theoretical result agrees well with previous experimental data

Raman spectra of the system TeCl4-SbCl5

International Nuclear Information System (INIS)

Brockner, W.; Demiray, A.F.

1980-01-01

Raman spectra of the solid and molten TeCl 4 . SbCl 5 addition compound and of some TeCl 4 -SbCl 5 mixtures have been recorded. Two modifications of the crystalline TeCl 4 -SbCl 5 compound have been found. The structure of the melt can be described by the equilibrium TeCl 3 + + SbCl 6 - reversible TeCl 4 + SbCl 5 lying on the left side. Mixtures with other stoichiometry contain the 1:1 adduct only and excess TeCl 4 or SbCl 5 , respectively. Such melts are built up by the ionic species TeCl 3 + and SbCl 6 - also and TeCl 4 or SbCl 5 according to stoichiometry. (author)

The Impact Of The MCU Life Extension Solvent On Sludge Batch 8 Projected Operating Windows

International Nuclear Information System (INIS)

Peeler, D. K.; Edwards, T. B.; Stone, M. E.

2013-01-01

As a part of the Actinide Removal Process (ARP)/Modular Caustic Side Solvent Extraction Unit (MCU) Life Extension Project, a next generation solvent (NGS) and a new strip acid will be deployed. The strip acid will be changed from dilute nitric acid to dilute boric acid (0.01 M). Because of these changes, experimental testing or evaluations with the next generation solvent are required to determine the impact of these changes (if any) to Chemical Process Cell (CPC) activities, glass formulation strategies, and melter operations at the Defense Waste Processing Facility (DWPF). The introduction of the dilute (0.01M) boric acid stream into the DWPF flowsheet has a potential impact on glass formulation and frit development efforts since B2O3 is a major oxide in frits developed for DWPF. Prior knowledge of this stream can be accounted for during frit development efforts but that was not the case for Sludge Batch 8 (SB8). Frit 803 has already been recommended and procured for SB8 processing; altering the frit to account for the incoming boron from the strip effluent (SE) is not an option for SB8. Therefore, the operational robustness of Frit 803 to the introduction of SE including its compositional tolerances (i.e., up to 0.0125M boric acid) is of interest and was the focus of this study. The primary question to be addressed in the current study was: What is the impact (if any) on the projected operating windows for the Frit 803 - SB8 flowsheet to additions of B2O3 from the SE in the Sludge Receipt and Adjustment Tank (SRAT)? More specifically, will Frit 803 be robust to the potential compositional changes occurring in the SRAT due to sludge variation, varying additions of ARP and/or the introduction of SE by providing access to waste loadings (WLs) of interest to DWPF? The Measurement Acceptability Region (MAR) results indicate there is very little, if any, impact on the projected operating windows for the Frit 803 - SB8 system regardless of the presence or absence of

DWPF simulant CPC studies for SB8

Energy Technology Data Exchange (ETDEWEB)

Koopman, D. C.; Zamecnik, J. R.

2013-06-25

The Savannah River National Laboratory (SRNL) accepted a technical task request (TTR) from Waste Solidification Engineering to perform simulant tests to support the qualification of Sludge Batch 8 (SB8) and to develop the flowsheet for SB8 in the Defense Waste Processing Facility (DWPF). These efforts pertained to the DWPF Chemical Process Cell (CPC). Separate studies were conducted for frit development and glass properties (including REDOX). The SRNL CPC effort had two primary phases divided by the decision to drop Tank 12 from the SB8 constituents. This report focuses on the second phase with SB8 compositions that do not contain the Tank 12 piece. A separate report will document the initial phase of SB8 testing that included Tank 12. The second phase of SB8 studies consisted of two sets of CPC studies. The first study involved CPC testing of an SB8 simulant for Tank 51 to support the CPC demonstration of the washed Tank 51 qualification sample in the SRNL Shielded Cells facility. SB8-Tank 51 was a high iron-low aluminum waste with fairly high mercury and moderate noble metal concentrations. Tank 51 was ultimately washed to about 1.5 M sodium which is the highest wash endpoint since SB3-Tank 51. This study included three simulations of the DWPF Sludge Receipt and Adjustment Tank (SRAT) cycle and Slurry Mix Evaporator (SME) cycle with the sludge-only flowsheet at nominal DWPF processing conditions and three different acid stoichiometries. These runs produced a set of recommendations that were used to guide the successful SRNL qualification SRAT/SME demonstration with actual Tank 51 washed waste. The second study involved five SRAT/SME runs with SB8-Tank 40 simulant. Four of the runs were designed to define the acid requirements for sludge-only processing in DWPF with respect to nitrite destruction and hydrogen generation. The fifth run was an intermediate acid stoichiometry demonstration of the coupled flowsheet for SB8. These runs produced a set of processing

DWPF simulant CPC studies for SB8

International Nuclear Information System (INIS)

Koopman, D. C.; Zamecnik, J. R.

2013-01-01

The Savannah River National Laboratory (SRNL) accepted a technical task request (TTR) from Waste Solidification Engineering to perform simulant tests to support the qualification of Sludge Batch 8 (SB8) and to develop the flowsheet for SB8 in the Defense Waste Processing Facility (DWPF). These efforts pertained to the DWPF Chemical Process Cell (CPC). Separate studies were conducted for frit development and glass properties (including REDOX). The SRNL CPC effort had two primary phases divided by the decision to drop Tank 12 from the SB8 constituents. This report focuses on the second phase with SB8 compositions that do not contain the Tank 12 piece. A separate report will document the initial phase of SB8 testing that included Tank 12. The second phase of SB8 studies consisted of two sets of CPC studies. The first study involved CPC testing of an SB8 simulant for Tank 51 to support the CPC demonstration of the washed Tank 51 qualification sample in the SRNL Shielded Cells facility. SB8-Tank 51 was a high iron-low aluminum waste with fairly high mercury and moderate noble metal concentrations. Tank 51 was ultimately washed to about 1.5 M sodium which is the highest wash endpoint since SB3-Tank 51. This study included three simulations of the DWPF Sludge Receipt and Adjustment Tank (SRAT) cycle and Slurry Mix Evaporator (SME) cycle with the sludge-only flowsheet at nominal DWPF processing conditions and three different acid stoichiometries. These runs produced a set of recommendations that were used to guide the successful SRNL qualification SRAT/SME demonstration with actual Tank 51 washed waste. The second study involved five SRAT/SME runs with SB8-Tank 40 simulant. Four of the runs were designed to define the acid requirements for sludge-only processing in DWPF with respect to nitrite destruction and hydrogen generation. The fifth run was an intermediate acid stoichiometry demonstration of the coupled flowsheet for SB8. These runs produced a set of processing

The impact of the MCU life extension solvent on sludge batch 8 projected operating windows

International Nuclear Information System (INIS)

Peeler, D.K.; Edwards, T.B.

2013-01-01

As a part of the Actinide Removal Process (ARP)/Modular Caustic Side Solvent Extraction Unit (MCU) Life Extension Project, a next generation solvent (NGS) and a new strip acid will be deployed. The strip acid will be changed from dilute nitric acid to dilute boric acid (0.01 M). Because of these changes, experimental testing or evaluations with the next generation solvent are required to determine the impact of these changes (if any) to Chemical Process Cell (CPC) activities, glass formulation strategies, and melter operations at the Defense Waste Processing Facility (DWPF). The introduction of the dilute (0.01 M) boric acid stream into the DWPF flowsheet has a potential impact on glass formulation and frit development efforts since B203 is a major oxide in frits developed for DWPF. Prior knowledge of this stream can be accounted for during frit development efforts but that was not the case for Sludge Batch 8 (SB8). Frit 803 has already been recommended and procured for SB8 processing; altering the frit to account for the incoming boron from the strip effluent (SE) is not an option for SB8. Therefore, the operational robustness of Frit 803 to the introduction of SE including its compositional tolerances (i.e., up to 0.0125M boric acid) is of interest and was the focus of this study. The primary question to be addressed in the current study was: What is the impact (if any) on the projected operating windows for the Frit 803 - SB8 flowsheet to additions of B203 from the SE in the Sludge Receipt and Adjustment Tank (SRAT)? More specifically, will Frit 803 be robust to the potential compositional changes occurring in the SRAT due to sludge variation, varying additions of ARP and/or the introduction of SE by providing access to waste loadings (WLs) of interest to DWPF? The Measurement Acceptability Region (MAR) results indicate there is very little, if any, impact on the projected operating windows for the Frit 803 - SB8 system regardless of the presence or absence of

Preparation and Characterization of Sb2Te3 Thin Films by Coevaporation

Directory of Open Access Journals (Sweden)

Bin Lv

2010-01-01

Full Text Available Deposition of Sb2Te3 thin films on soda-lime glass substrates by coevaporation of Sb and Te is described in this paper. Sb2Te3 thin films were characterized by x-ray diffraction (XRD, x-ray fluorescence (XRF, atomic force microscopy (AFM, x-ray photoelectron spectroscopy (XPS, electrical conductivity measurements, and Hall measurements. The abnormal electrical transport behavior occurred from in situ electrical conductivity measurements. The results indicate that as-grown Sb2Te3 thin films are amorphous and undergo an amorphous-crystalline transition after annealing, and the posttreatment can effectively promote the formation of Sb-Te bond and prevent oxidation of thin film surface.

From thermoelectric bulk to nanomaterials: Current progress for Bi2Te3 and CoSb3

International Nuclear Information System (INIS)

Peranio, N.; Eibl, O.; Baessler, S.; Nielsch, K.; Klobes, B.; Hermann, R.P.; Daniel, M.; Albrecht, M.; Goerlitz, H.; Pacheco, V.; Bedoya-Martinez, N.; Hashibon, A.; Elsaesser, C.

2016-01-01

Bi 2 Te 3 and CoSb 3 based nanomaterials were synthesized and their thermoelectric, structural, and vibrational properties analyzed to assess and reduce ZT-limiting mechanisms. The same preparation and/or characterization methods were applied in the different materials systems. Single-crystalline, ternary p-type Bi 15 Sb 29 Te 56 , and n-type Bi 38 Te 55 Se 7 nanowires with power factors comparable to nanostructured bulk materials were prepared by potential-pulsed electrochemical deposition in a nanostructured Al 2 O 3 matrix. p-type Sb 2 Te 3 , n-type Bi 2 Te 3 , and n-type CoSb 3 thin films were grown at room temperature using molecular beam epitaxy and were subsequently annealed at elevated temperatures. This yielded polycrystalline, single phase thin films with optimized charge carrier densities. In CoSb 3 thin films the speed of sound could be reduced by filling the cage structure with Yb and alloying with Fe yielded p-type material. Bi 2 (Te 0.91 Se 0.09 ) 3 /SiC and (Bi 0.26 Sb 0.74 ) 2 Te 3 /SiC nanocomposites with low thermal conductivities and ZT values larger than 1 were prepared by spark plasma sintering. Nanostructure, texture, chemical composition, as well as electronic and phononic excitations were investigated by X-ray diffraction, nuclear resonance scattering, inelastic neutron scattering, Moessbauer spectroscopy, and transmission electron microscopy. For Bi 2 Te 3 materials, ab-initio calculations together with equilibrium and non-equilibrium molecular dynamics simulations for point defects yielded their formation energies and their effect on lattice thermal conductivity, respectively. Current advances in thermoelectric Bi 2 Te 3 and CoSb 3 based nanomaterials are summarized. Advanced synthesis and characterization methods and theoretical modeling were combined to assess and reduce ZT-limiting mechanisms in these materials. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Alternative synthetic route for the heterometallic CO-releasing [Sb@Rh12(CO27]3− icosahedral carbonyl cluster and synthesis of its new unsaturated [Sb@Rh12(CO24]4− and dimeric [{Sb@Rh12Sb(CO25}2Rh(CO2PPh3]7− derivatives

Directory of Open Access Journals (Sweden)

Cristina Femoni

2016-10-01

Full Text Available The hetero-metallic [Sb@Rh12(CO27]3− cluster has been known as for over three decades thanks to Vidal and co-workers, and represents the first example of an E-centered (E=heteroatom icosahedral rhodium carbonyl cluster. However, its synthesis required high temperature (140–160 °C and elevated CO pressure (400 atm. Applying the redox condensation method for cluster preparation, we herein report a new synthetic, high-yield route for preparing [Sb@Rh12(CO27]3− under much milder conditions of temperature and pressure. Notably, when the same synthesis was carried out under N2 instead of CO atmosphere, the new isostructural but unsaturated derivative [Sb@Rh12(CO24]4− was obtained, for which we report the full X-ray structural characterization. This species represents one of the few examples of an icosahedral cluster disobeying the electron-counting Wade-Mingos rules, possessing less than the expected 170 cluster valence electrons (CVEs. Judging from IR monitoring, the two species can be obtained one from the other by switching between N2 and CO atmosphere, making [Sb@Rh12(CO27]3− a spontaneous CO-releasing molecule. Finally, the study of the chemical reactivity of [Sb@Rh12(CO27]3− with PPh3 allowed us to obtain the new [{Sb@Rh12Sb(CO25}2Rh(CO2PPh3]7− dimeric compound, for which we herein report the full X-ray structural and 31P NMR analyses.

Effect of tungsten on the phase-change properties of Ge8Sb2Te11 thin films for the phase-change device

Science.gov (United States)

Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin

2017-07-01

In this study, the electrical, optical, and structural properties of tungsten (W)-doped Ge8Sb2Te11 thin films were investigated. Previously, GeSbTe alloys were doped with various materials in an attempt to improve the thermal stability. Ge8Sb2Te11 and W-doped Ge8Sb2Te11 films with a thickness of 200 nm were fabricated by using an RF magnetron reactive co-sputtering system at room temperature on Si ( p-type, 100) and glass substrate. The fabricated thin films were annealed in a furnace in the 0 - 400 ° C temperature range. The optical properties were analyzed using a UV-Vis-IR spectrophotometer, and by using Beer's Law equation, the optical-energy band gap ( E op ), slope B 1/2, and slope 1/ F were calculated. For the crystalline materials, an increase in the slope B 1/2 and 1/ F was observed, exhibiting a good effect on the thermal stability in the amorphous state after the phase change. The structural properties were analyzed by X-ray diffraction, and the result showed that the W-doped Ge8Sb2Te11 had a face-centered-cubic (fcc) crystalline structure increased crystallization temperature ( T c ). An increase in the T c increased the thermal stability in the amorphous state. The electrical properties were analyzed using a 4-point probe, exhibiting an increase in the sheet resistance ( R s ) in the amorphous and the crystalline states indicating a reduced programming current in the memory device.

Superlattice-like SnSb{sub 4}/Ga{sub 3}Sb{sub 7} thin films for ultrafast switching phase-change memory application

Energy Technology Data Exchange (ETDEWEB)

Hu, Yifeng [Tongji University, Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Shanghai (China); Jiangsu University of Technology, School of Mathematics and Physics, Changzhou (China); He, Zifang; Zhai, Jiwei [Tongji University, Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Shanghai (China); Wu, Pengzhi; Lai, Tianshu [Sun Yat-Sen University, State Key Laboratory of Optoelectronic Materials and Technology, Department of Physics, Guangzhou (China); Song, Sannian; Song, Zhitang [Chinese Academy of Sciences, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Shanghai (China)

2015-11-15

The carrier concentration of Sb-rich phase SnSb{sub 4}, Ga{sub 3}Sb{sub 7} and superlattice-like [SnSb{sub 4}(3.5 nm)/Ga{sub 3}Sb{sub 7}(4 nm)]{sub 7} (SLL-7) thin films as a function of annealing temperature was investigated to explain the reason of resistance change. The activation energy for crystallization was calculated with a Kissinger equation to estimate the thermal stability. In order to illuminate the transition mechanisms, the crystallization kinetics of SLL-7 were explored by using Johnson-Mehl-Avrami theory. The obtained values of Avrami indexes indicate that a one-dimensional growth-dominated mechanism is responsible for the set transition of SLL-7 thin film. X-ray diffractometer and Raman scattering spectra were recorded to investigate the change of crystalline structure. The measurement of atomic force microscopy indicated that SLL-7 thin film has a good smooth surface. A picosecond laser pump-probe system was used to test and verify phase-change speed of the SLL-7 thin film. (orig.)

Probing the magnetic ground state of single crystalline Ce3TiSb5

Science.gov (United States)

Matin, M.; Kulkarni, R.; Thamizhavel, A.; Dhar, S. K.; Provino, A.; Manfrinetti, P.

2017-04-01

Motivated by the report of superconductivity in R3TiSb5 (R  =  La and Ce) and possibly Nd3TiSb5 at  ∼4 K, we grew single crystals of La3TiSb5 and Ce3TiSb5 by the high-temperature solution method using Sn as a flux. While in both compounds we observed a superconducting transition at 3.7 K for resistivity and low-field magnetization, our data conclusively show that it arose from residual Sn flux present in the single crystals. In particular, the heat capacity data do not present any of the anomalies expected from a bulk superconducting transition. The anisotropic magnetic properties of Ce3TiSb5, crystallizing in a hexagonal P63/mcm structure, were studied in detail. We find that the Ce ions in Ce3TiSb5 form a Kondo lattice and exhibited antiferromagnetic ordering at 5.5 K with a reduced moment and a moderately normalized Sommerfeld coefficient of 598 mJ/mol K2. The characteristic single-ion Kondo energy scale was found to be  ∼8 K. The magnetization data were subjected to a crystal electric field (CEF) analysis. The experimentally observed Schottky peak in the 4f-electron heat capacity of Ce3TiSb5 was reproduced fairly well by the energy levels derived from the CEF analysis.

Synthesis and characterization of PVP/ Sb2S3 composite films

International Nuclear Information System (INIS)

Salema, A.M.; Marzouka, S.; Khafagib, M.G.

2005-01-01

Polyvinyl pyrrolidone has been successfully used as a matrix to embedded Sb 2 S 3 nanoparticles. PVP thin films containing 5-25 wt % Sb 2 S 3 were deposited onto glass substrates by dip coating. X-ray diffraction spectra revealed that Sb 2 S 3 crystals depressed as nanometer-sized in the PVP matrix and the result was confirmed via scanning electron microscopy. The transmission and reflection spectra of the prepared samples were recorded in the wavelength optical range 250-2500 nm. The transmission spectra of the films show that transmission valley shifts toward higher wavelengths with increasing Sb 2 S 3 wt %. The optical constants of the deposited films, such as refractive index, extinction coefficient were obtained using the transmission and reflection data. The spectral behaviour of the loss factor, as well as the real and imaginary parts of the optical conductivity were also presented

7 CFR 1709.202 Policy. - [Reserved

Science.gov (United States)

2010-01-01

... 7 Agriculture 11 2010-01-01 2010-01-01 false [Reserved] 1709.202 Policy. Section 1709.202 Policy... AGRICULTURE ASSISTANCE TO HIGH ENERGY COST COMMUNITIES Bulk Fuel Revolving Fund Grant Program § 1709.202 Policy. [Reserved] ...

Standard test method for linear thermal expansion of glaze frits and ceramic whiteware materials by the interferometric method

CERN Document Server

American Society for Testing and Materials. Philadelphia

1995-01-01

1.1 This test method covers the interferometric determination of linear thermal expansion of premelted glaze frits and fired ceramic whiteware materials at temperatures lower than 1000°C (1830°F). 1.2 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Crystal growth and characterization of bulk Sb2Te3 topological insulator

Science.gov (United States)

Sultana, Rabia; Gurjar, Ganesh; Patnaik, S.; Awana, V. P. S.

2018-04-01

The Sb2Te3 crystals are grown using the conventional self flux method via solid state reaction route, by melting constituent elements (Sb and Te) at high temperature (850 °C), followed by slow cooling (2 °C/h). As grown Sb2Te3 crystals are analysed for various physical properties by x-ray diffraction (XRD), Raman Spectroscopy, Scanning Electron Microscopy (SEM) coupled with Energy Dispersive x-ray Spectroscopy (EDAX) and electrical measurements under magnetic field (6 Tesla) down to low temperature (2.5 K). The XRD pattern revealed the growth of synthesized Sb2Te3 sample along (00l) plane, whereas the SEM along with EDAX measurements displayed the layered structure with near stoichiometric composition, without foreign contamination. The Raman scattering studies displayed known ({{{{A}}}1{{g}}}1, {{{{E}}}{{g}}}2 and {{{{A}}}1{{g}}}2) vibrational modes for the studied Sb2Te3. The temperature dependent electrical resistivity measurements illustrated the metallic nature of the as grown Sb2Te3 single crystal. Further, the magneto—transport studies represented linear positive magneto-resistance (MR) reaching up to 80% at 2.5 K under an applied field of 6 Tesla. The weak anti localization (WAL) related low field (±2 Tesla) magneto-conductance at low temperatures (2.5 K and 20 K) has been analysed and discussed using the Hikami—Larkin—Nagaoka (HLN) model. Summarily, the short letter reports an easy and versatile method for crystal growth of bulk Sb2Te3 topological insulator (TI) and its brief physical property characterization.

Solvothermal synthesis of graphene-Sb2S3 composite and the degradation activity under visible light

International Nuclear Information System (INIS)

Tao, Wenguang; Chang, Jiuli; Wu, Dapeng; Gao, Zhiyong; Duan, Xiaoli; Xu, Fang; Jiang, Kai

2013-01-01

Graphical abstract: Display Omitted Highlights: ► Graphene-Sb 2 S 3 composites were synthesized through a facile solvothermal method. ► Hydroxyl radicals are the main species responsible for the photodegradation activity. ► Graphene-Sb 2 S 3 demonstrated dramatically improved visible light degradation activity. -- Abstract: Novel graphene-Sb 2 S 3 (G-Sb 2 S 3 ) composites were synthesized via a facile solvothermal method with graphene oxide (GO), SbCl 3 and thiourea as the reactants. GO played an important role in controlling the size and the distribution of the formed Sb 2 S 3 nanoparticles on the graphene sheets with different density. Due to the negative surface charge, smaller Sb 2 S 3 particles size and efficient electrons transfer from Sb 2 S 3 to graphene, the composites demonstrated improved photodegradation activity on rhodamine B (RhB). Among these composites, the product G-Sb 2 S 3 0.1, which was synthesized with the GO concentration of 0.1 mg/mL, exhibited the highest photodegradation activity owing to the considerable density of Sb 2 S 3 nanoparticles onto graphene sheet free of aggregation. Hydroxyl radicals (·OH) derived from conduction band (CB) electrons of Sb 2 S 3 is suggested to be responsible for the photodegradation of RhB. The high visible light degradation activity and the satisfactory cycling stability made the as-prepared G-Sb 2 S 3 0.1 an applicable photocatalyst.

Phase Stability and Electronic Structure of Prospective Sb-Based Mixed Sulfide and Iodide 3D Perovskite (CH3NH3)SbSI2.

Science.gov (United States)

Li, Tianyang; Wang, Xiaoming; Yan, Yanfa; Mitzi, David B

2018-06-29

Lead-free antimony-based mixed sulfide and iodide perovskite phases have recently been reported to be synthesized experimentally and to exhibit reasonable photovoltaic performance. Through a combination of experimental validation and computational analysis, we show no evidence of the formation of the mixed sulfide and iodide perovskite phase, MASbSI 2 (MA = CH 3 NH 3 + ), and instead that the main products are a mixture of the binary and ternary compounds (Sb 2 S 3 and MA 3 Sb 2 I 9 ). Density functional theory calculations also indicate that such a mixed sulfide and iodide perovskite phase should be thermodynamically less stable compared with binary/ternary anion-segregated secondary phases and less likely to be synthesized under equilibrium conditions. Additionally, band structure calculations show that this mixed sulfide and iodide phase, if possible to synthesize (e.g., under nonequilibrium conditions), should have a suitable direct band gap for photovoltaic application.

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

Science.gov (United States)

Zhang, Haijun; Liu, Chao-Xing; Qi, Xiao-Liang; Dai, Xi; Fang, Zhong; Zhang, Shou-Cheng

2009-06-01

Topological insulators are new states of quantum matter in which surface states residing in the bulk insulating gap of such systems are protected by time-reversal symmetry. The study of such states was originally inspired by the robustness to scattering of conducting edge states in quantum Hall systems. Recently, such analogies have resulted in the discovery of topologically protected states in two-dimensional and three-dimensional band insulators with large spin-orbit coupling. So far, the only known three-dimensional topological insulator is BixSb1-x, which is an alloy with complex surface states. Here, we present the results of first-principles electronic structure calculations of the layered, stoichiometric crystals Sb2Te3, Sb2Se3, Bi2Te3 and Bi2Se3. Our calculations predict that Sb2Te3, Bi2Te3 and Bi2Se3 are topological insulators, whereas Sb2Se3 is not. These topological insulators have robust and simple surface states consisting of a single Dirac cone at the Γ point. In addition, we predict that Bi2Se3 has a topologically non-trivial energy gap of 0.3eV, which is larger than the energy scale of room temperature. We further present a simple and unified continuum model that captures the salient topological features of this class of materials.

Texture and magnetic properties improvement of a 3% Si non-oriented electrical steel by Sb addition

Energy Technology Data Exchange (ETDEWEB)

Rodrigues, Marcio Ferreira, E-mail: marciof.rodrigues@aperam.com [Aperam South America, Timóteo, MG (Brazil); Cunha, Marco Antonio da; Costa Paolinelli, Sebastião da [Aperam South America, Timóteo, MG (Brazil); Cota, André Barros [Physics Department—Universidade Federal de Ouro Preto, Redemat, Ouro Preto, MG (Brazil)

2013-04-15

The influence of small antimony addition and thermomechanical processing on the magnetic properties of a 3% Si steel was investigated. The samples were processed in the laboratory with 930 °C hot rolling finishing temperature, three different hot band thicknesses, hot band annealing at 1030 °C, cold rolling with three different reductions to 0.35 mm thickness and final annealing at 1030 °C. The results have shown that the best combination of core loss and magnetic induction can be obtained by Sb content of 0.045% and 76% cold rolling reduction, and that Eta/Gamma ratio is higher and grain size larger at this Sb content. -- Highlights: ► The Sb addition on the magnetic properties of a 3% Si steel was investigated. ► The 0.045% Sb and cold rolling reduction of 76% results in the best magnetic properties. ► Sb and cold rolling reduction results in a optimum final grain size and texture. ► The work was performed in a 3% Si non-oriented electrical steel.

DWPF SB6 Initial CPC Flowsheet Testing SB6-1 TO SB6-4L Tests Of SB6-A And SB6-B Simulants

International Nuclear Information System (INIS)

Lambert, D.; Pickenheim, B.; Best, D.

2009-01-01

The Defense Waste Processing Facility (DWPF) will transition from Sludge Batch 5 (SB5) processing to Sludge Batch 6 (SB6) processing in late fiscal year 2010. Tests were conducted using non-radioactive simulants of the expected SB6 composition to determine the impact of varying the acid stoichiometry during the Sludge Receipt and Adjustment Tank (SRAT) and Slurry Mix Evaporator (SME) processes. The work was conducted to meet the Technical Task Request (TTR) HLW/DWPF/TTR-2008-0043, Rev.0 and followed the guidelines of a Task Technical and Quality Assurance Plan (TT and QAP). The flowsheet studies are performed to evaluate the potential chemical processing issues, hydrogen generation rates, and process slurry rheological properties as a function of acid stoichiometry. These studies were conducted with the estimated SB6 composition at the time of the study. This composition assumed a blend of 101,085 kg of Tank 4 insoluble solids and 179,000 kg of Tank 12 insoluble solids. The current plans are to subject Tank 12 sludge to aluminum dissolution. Liquid Waste Operations assumed that 75% of the aluminum would be dissolved during this process. After dissolution and blending of Tank 4 sludge slurry, plans included washing the contents of Tank 51 to ∼1M Na. After the completion of washing, the plan assumes that 40 inches on Tank 40 slurry would remain for blending with the qualified SB6 material. There are several parameters that are noteworthy concerning SB6 sludge: (1) This is the second batch DWPF will be processing that contains sludge that has had a significant fraction of aluminum removed through aluminum dissolution; (2) The sludge is high in mercury, but the projected concentration is lower than SB5; (3) The sludge is high in noble metals, but the projected concentrations are lower than SB5; and(4) The sludge is high in U and Pu - components that are not added in sludge simulants. Six DWPF process simulations were completed in 4-L laboratory-scale equipment using

KFeSbTe3: A quaternary chalcogenide aerogel for preferential adsorption of polarizable hydrocarbons and gases

KAUST Repository

Ahmed, Ejaz; Rothenberger, Alexander

2015-01-01

The first telluride-based quaternary aerogel KFeSbTe3 is synthesized by a sol-gel metathesis reaction between Fe(OAc)2 and K3SbTe3 in dimethyl formamide. The aerogel has an exceptionally large surface area 652 m2 g-1 which is amongst the highest

Unraveling the electrolyte properties of Na3SbS4 through computation and experiment

Science.gov (United States)

Rush, Larry E.; Hood, Zachary D.; Holzwarth, N. A. W.

2017-12-01

Solid-state sodium electrolytes are expected to improve next-generation batteries on the basis of favorable energy density and reduced cost. Na3SbS4 represents a new solid-state ion conductor with high ionic conductivities in the mS/cm range. Here, we explore the tetragonal phase of Na3SbS4 and its interface with metallic sodium anode using a combination of experiments and first-principles calculations. The computed Na-ion vacancy migration energies of 0.1 eV are smaller than the value inferred from experiment, suggesting that grain boundaries or other factors dominate the experimental systems. Analysis of symmetric cells of the electrolyte—Na/Na 3SbS4/Na —show that a conductive solid electrolyte interphase forms. Computer simulations infer that the interface is likely to be related to Na3SbS3 , involving the conversion of the tetrahedral SbS43 - ions of the bulk electrolyte into trigonal pyramidal SbS33 - ions at the interface.

Solid Liquid Interdiffusion Bonding of Zn4Sb3 Thermoelectric Material with Cu Electrode

Science.gov (United States)

Lin, Y. C.; Lee, K. T.; Hwang, J. D.; Chu, H. S.; Hsu, C. C.; Chen, S. C.; Chuang, T. H.

2016-10-01

The ZnSb intermetallic compound may have thermoelectric applications because it is low in cost and environmentally friendly. In this study, a Zn4Sb3 thermoelectric element coated with a Ni barrier layer and a Ag reaction layer was bonded with a Ag-coated Cu electrode using a Ag/Sn/Ag solid-liquid interdiffusion bonding process. The results indicated that a Ni5Zn21 intermetallic phase formed easily at the Zn4Sb3/Ni interface, leading to sound adhesion. In addition, Sn film was found to react completely with the Ag layer to form a Ag3Sn intermetallic layer having a melting point of 480°C. The resulting Zn4Sb3 thermoelectric module can be applied at the optimized operation temperature (400°C) of Zn4Sb3 material as a thermoelectric element. The bonding strengths ranged from 14.9 MPa to 25.0 MPa, and shear tests revealed that the Zn4Sb3/Cu-joints fractured through the interior of the thermoelectric elements.

Feed Preparation for Source of Alkali Melt Rate Tests

International Nuclear Information System (INIS)

Stone, M. E.; Lambert, D. P.

2005-01-01

The purpose of the Source of Alkali testing was to prepare feed for melt rate testing in order to determine the maximum melt-rate for a series of batches where the alkali was increased from 0% Na 2 O in the frit (low washed sludge) to 16% Na 2 O in the frit (highly washed sludge). This document summarizes the feed preparation for the Source of Alkali melt rate testing. The Source of Alkali melt rate results will be issued in a separate report. Five batches of Sludge Receipt and Adjustment Tank (SRAT) product and four batches of Slurry Mix Evaporator (SME) product were produced to support Source of Alkali (SOA) melt rate testing. Sludge Batch 3 (SB3) simulant and frit 418 were used as targets for the 8% Na 2 O baseline run. For the other four cases (0% Na 2 O, 4% Na 2 O, 12% Na 2 O, and 16% Na 2 O in frit), special sludge and frit preparations were necessary. The sludge preparations mimicked washing of the SB3 baseline composition, while frit adjustments consisted of increasing or decreasing Na and then re-normalizing the remaining frit components. For all batches, the target glass compositions were identical. The five SRAT products were prepared for testing in the dry fed melt-rate furnace and the four SME products were prepared for the Slurry-fed Melt-Rate Furnace (SMRF). At the same time, the impacts of washing on a baseline composition from a Chemical Process Cell (CPC) perspective could also be investigated. Five process simulations (0% Na 2 O in frit, 4% Na 2 O in frit, 8% Na 2 O in frit or baseline, 12% Na 2 O in frit, and 16% Na 2 O in frit) were completed in three identical 4-L apparatus to produce the five SRAT products. The SRAT products were later dried and combined with the complementary frits to produce identical glass compositions. All five batches were produced with identical processing steps, including off-gas measurement using online gas chromatographs. Two slurry-fed melter feed batches, a 4% Na 2 O in frit run (less washed sludge combined with

Lead-free Perovskite Materials (NH4 )3 Sb2 Ix Br9-x.

Science.gov (United States)

Zuo, Chuantian; Ding, Liming

2017-06-01

A family of perovskite light absorbers (NH 4 ) 3 Sb 2 I x Br 9-x (0≤x≤9) was prepared. These materials show good solubility in ethanol, a low-cost, hypotoxic, and environmentally friendly solvent. The light absorption of (NH 4 ) 3 Sb 2 I x Br 9-x films can be tuned by adjusting I and Br content. The absorption onset for (NH 4 ) 3 Sb 2 I x Br 9-x films changes from 558 nm to 453 nm as x changes from 9 to 0. (NH 4 ) 3 Sb 2 I 9 single crystals were prepared, exhibiting a hole mobility of 4.8 cm 2  V -1  s -1 and an electron mobility of 12.3 cm 2  V -1  s -1 . (NH 4 ) 3 Sb 2 I 9 solar cells gave an open-circuit voltage of 1.03 V and a power conversion efficiency of 0.51 %. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of tungsten on the phase-change properties of Ge_8Sb_2Te_1_1 Thin Films for the Phase-change device

International Nuclear Information System (INIS)

Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin

2017-01-01

In this study, the electrical, optical, and structural properties of tungsten (W)-doped Ge_8Sb_2Te_1_1 thin films were investigated. Previously, GeSbTe alloys were doped with various materials in an attempt to improve the thermal stability. Ge_8Sb_2Te_1_1 and W-doped Ge_8Sb_2Te_1_1 films with a thickness of 200 nm were fabricated by using an RF magnetron reactive co-sputtering system at room temperature on Si (p-type, 100) and glass substrate. The fabricated thin films were annealed in a furnace in the ∼ 0 - 400 ℃ temperature range. The optical properties were analyzed using a UV-Vis-IR spectrophotometer, and by using Beer’s Law equation, the optical-energy band gap (E_o_p), slope B"1"/"2, and slope 1/F were calculated. For the crystalline materials, an increase in the slope B"1"/"2 and 1/F was observed, exhibiting a good effect on the thermal stability in the amorphous state after the phase change. The structural properties were analyzed by X-ray diffraction, and the result showed that the W-doped Ge_8Sb_2Te_1_1 had a face-centered-cubic (fcc) crystalline structure increased crystallization temperature (T_c). An increase in the T_c increased the thermal stability in the amorphous state. The electrical properties were analyzed using a 4-point probe, exhibiting an increase in the sheet resistance (R_s) in the amorphous and the crystalline states indicating a reduced programming current in the memory device.

Buried homojunction in CdS/Sb2Se3 thin film photovoltaics generated by interfacial diffusion

Science.gov (United States)

Zhou, Ying; Li, Yang; Luo, Jiajun; Li, Dengbing; Liu, Xinsheng; Chen, Chao; Song, Huaibing; Ma, Jingyuan; Xue, Ding-Jiang; Yang, Bo; Tang, Jiang

2017-07-01

Antimony selenide (Sb2Se3) emerges as a very promising non-toxic absorber material for thin film photovoltaics, and most of the devices, either in the superstrate or substrate configuration, employed CdS as the buffer layer. Due to the peculiar one-dimensional crystal structure of Sb2Se3, severe interfacial diffusion would be expected. In this letter, the interfacial diffusion in CdS/Sb2Se3 photovoltaics was carefully characterized from a combined material and device physics characterization. The results indicated that a buried homojunction located deep inside the Sb2Se3 absorber layer due to Cd diffusion, instead of the apparent CdS/Sb2Se3 heterojunction, dictated charge separation and device performance in Sb2Se3 thin film solar cells. Cd diffusion converted p-type Sb2Se3 into n-type by introducing a donor level with an activation energy of 0.22 eV. Our studies deepen the understanding of Sb2Se3 photovoltaics and shed light on their further performance optimization.

Controlled Synthesis of Sb 2 O 3 Nanoparticles, Nanowires, and Nanoribbons

Directory of Open Access Journals (Sweden)

2006-01-01

Full Text Available Sb 2 O 3 nanoparticles, nanowires, and nanoribbons have been selectively synthesized in a controlled manner under mild conditions by using CTAB as a soft template. By adopting Sb ( OH 4 − as an inorganic precursor and the concentration of CTAB as an adjusting parameter, morphologies of Sb 2 O 3 nanostructures can be selectively controlled. Typically, C CTAB <0.15 mmol favors the formation of nanoparticles (product one or short form P1; when the concentration of CATB is in the range 0.15–2.0 mmol, nanowires (P2 dominate the products; nanoribbons (P3 form above the concentration of 2.0 mmol, and when the concentration of CTAB goes further higher, treelike bundles of nanoribbons could be achieved. The method in the present study has potential advantages of easy handling, relatively low-cost, and large-scale production. The facile and large-scale synthesis of varied Sb 2 O 3 nanostructures is believed to be useful for the application of catalysis and flame retardance.

A Novel Framework Antimony (III) Phosphate: Synthesis and Structure of NaSb 3O 2(PO 4) 2

Science.gov (United States)

Adair, Brian A.; de Delgado, Graciela Díaz; Miguel Delgado, J.; Cheetham, Anthony K.

2000-04-01

The antimony (III) phosphate, NaSb3O2(PO4)2, is a framework structure built from SbIII and PV centers; orthorhombic, space group Pca21 (No. 29), a=13.944(3), b=6.6822(13), c=20.886(4) Å, V=1946.1(7) Å3, Z=8. Stereochemically active lone pairs of electrons associated with SbIIIO5 and SbIIIO4 polyhedra point into eight-ring channels, approximately 5×7 Å2, which dominate the architecture of the title compound. Charge-compensating sodium cations occupy the remaining space in the channels.

Epitaxial growth of Sb-doped nonpolar a-plane ZnO thin films on r-plane sapphire substrates by RF magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Chen, Hou-Guang, E-mail: houguang@isu.edu.tw [Department of Materials Science and Engineering, I-Shou University, Kaohsiung 840, Taiwan (China); Hung, Sung-Po [Department of Materials Science and Engineering, I-Shou University, Kaohsiung 840, Taiwan (China)

2014-02-15

Highlights: ► Sb-doped nonpolar a-plane ZnO layers were epitaxially grown on sapphire substrates. ► Crystallinity and electrical properties were studied upon growth condition and doping concentration. ► The out-of-plane lattice spacing of ZnO films reduces monotonically with increasing Sb doping level. ► The p-type conductivity of ZnO:Sb film is closely correlated with annealing condition and Sb doping level. -- Abstract: In this study, the epitaxial growth of Sb-doped nonpolar a-plane (112{sup ¯}0) ZnO thin films on r-plane (11{sup ¯}02) sapphire substrates was performed by radio-frequency magnetron sputtering. The influence of the sputter deposition conditions and Sb doping concentration on the microstructural and electrical properties of Sb-doped ZnO epitaxial films was investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and the Hall-effect measurement. The measurement of the XRD phi-scan indicated that the epitaxial relationship between the ZnO:Sb layer and sapphire substrate was (112{sup ¯}0){sub ZnO}//(11{sup ¯}02){sub Al{sub 2O{sub 3}}} and [11{sup ¯}00]{sub ZnO}//[112{sup ¯}0]{sub Al{sub 2O{sub 3}}}. The out-of-plane a-axis lattice parameter of ZnO films was reduced monotonically with the increasing Sb doping level. The cross-sectional transmission electron microscopy (XTEM) observation confirmed the absence of any significant antimony oxide phase segregation across the thickness of the Sb-doped ZnO epitaxial film. However, the epitaxial quality of the films deteriorated as the level of Sb dopant increased. The electrical properties of ZnO:Sb film are closely correlated with post-annealing conditions and Sb doping concentrations.

41 CFR 50-202.3 - Learners, student learners, apprentices, and handicapped workers.

Science.gov (United States)

2010-07-01

... than the minimum wage prescribed in § 50-202.2 to the same extent such employment is permitted under... Management Other Provisions Relating to Public Contracts PUBLIC CONTRACTS, DEPARTMENT OF LABOR 202-MINIMUM WAGE DETERMINATIONS Groups of Industries § 50-202.3 Learners, student learners, apprentices, and...

Cationic Site-Preference in the Yb14-xCaxAlSb11 (4.81 ≤ x ≤ 10.57 Series: Theoretical and Experimental Studies

Directory of Open Access Journals (Sweden)

Gnu Nam

2016-07-01

Full Text Available Four quaternary Zintl phases with mixed-cations in the Yb14-xCaxAlSb11 (4.81 ≤ x ≤ 10.57 series have been synthesized by using the arc-melting and the Sn metal-flux reaction methods, and the isotypic crystal structures of the title compounds have been characterized by both powder and single-crystal X-ray diffraction (PXRD and SXRD analyses. The overall crystal structure adopting the Ca14AlSb11-type can be described as a pack of four different types of the spiral-shaped one-dimensional octahedra chains with various turning radii, each of which is formed by the distorted ((Yb/CaSb6 octahedra. Four symmetrically-independent cationic sites contain mixed occupations of Yb2+ and Ca2+ with different mixing ratios and display a particular site preference by two cationic elements. Two hypothetical structural models of Yb4Ca10AlSb11 with different cationic arrangements were designed and exploited to study the details of site and bond energies. QVAL values provided the rationale for the observed site preference based on the electronegativity of each atom. Density of states (DOS curves indicated a semiconducting property of the title compounds, and crystal orbital Hamilton population (COHP plots explained individual chemical bonding between components. Thermal conductivity measurement was performed for Yb8.42(4Ca5.58AlSb11, and the result was compared to compounds without mixed cations.

Synthesis and Characterization of Sb2S3 Nanorods via Complex Decomposition Approach

Directory of Open Access Journals (Sweden)

Abdolali Alemi

2011-01-01

Full Text Available Based on the complex decomposition approach, a simple hydrothermal method has been developed for the synthesizing of Sb2S3 nanorods with high yield in 24 h at 150∘C. The powder X-ray diffraction pattern shows the Sb2S3 crystals belong to the orthorhombic phase with calculated lattice parameters a=1.120 nm, b=1.128 nm, and c=0.383 nm. The quantification of energy dispersive X-ray spectrometric analysis peaks give an atomic ratio of 2 : 3 for Sb : S. TEM and SEM studies reveal that the appearance of the as-prepared Sb2S3 is rod-like which is composed of nanorods with the typical width of 30–160 nm and length of up to 6 μm. High-resolution transmission electron microscopic (HRTEM studies reveal that the Sb2S3 is oriented in the [10-1] growth direction. The band gap calculated from the absorption spectra is found to be 3.29 ev, indicating a considerable blue shift relative to the bulk. The formation mechanism of Sb2S3 nanostructures is proposed.

Sb{sub 2}Te{sub 3} nanobelts and nanosheets: Hydrothermal synthesis, morphology evolution and thermoelectric properties

Energy Technology Data Exchange (ETDEWEB)

Dong, Guo-Hui [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Zhu, Ying-Jie, E-mail: y.j.zhu@mail.sic.ac.cn [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Cheng, Guo-Feng; Ruan, Yin-Jie [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China)

2013-02-15

Graphical abstract: Sb{sub 2}Te{sub 3} nanobelts and nanosheets were synthesized by a hydrothermal method, and the morphology evolution from Sb{sub 2}Te{sub 3} nanobelts to nanosheets with the prolonging hydrothermal time was observed. Highlights: Black-Right-Pointing-Pointer Hydrothermal synthesis of Sb{sub 2}Te{sub 3} nanobelts and nanosheets is demonstrated. Black-Right-Pointing-Pointer The morphology of Sb{sub 2}Te{sub 3} can be adjusted by varying hydrothermal time. Black-Right-Pointing-Pointer The morphology evolution of Sb{sub 2}Te{sub 3} from nanobelts to nanosheets is observed. Black-Right-Pointing-Pointer High Seebeck coefficients (S) of Sb{sub 2}Te{sub 3} nanobelts and nanosheets are attained. - Abstract: Sb{sub 2}Te{sub 3} nanobelts and nanosheets were synthesized by a hydrothermal method using SbCl{sub 3} and TeO{sub 2} as the antimony and tellurium source, hydrazine hydrate as a reducing reagent, polyvinyl alcohol as a surfactant and water as the solvent. The effects of experimental parameters on the product were investigated. The experiments indicated that the elemental Te formed during the reaction, acting as a reactive and self-sacrificial template for the formation of Sb{sub 2}Te{sub 3} nanobelts. The morphology evolution from Sb{sub 2}Te{sub 3} nanobelts to nanosheets with the prolonging hydrothermal time was observed. The products were characterized by X-ray powder diffraction (XRD), transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), selected area electron diffraction (SAED), Fourier transform infrared (FTIR) spectroscopy and differential scanning calorimetry (DSC). The thermoelectric properties of the tablet samples of Sb{sub 2}Te{sub 3} nanostructured powders with different morphologies prepared by a room-temperature pressurized method were investigated.

Synthesis, Characterization, and Catalytic Performance of Sb2Se3 Nanorods

Directory of Open Access Journals (Sweden)

Ning Hu

2017-01-01

Full Text Available Antimony selenide has many potential applications in thermoelectric, photovoltaic, and phase-change memory devices. A novel method is described for the rapid and scalable preparation of antimony selenide (Sb2Se3 nanorods in the presence of hydrazine hydrate and/or permanganate at 40°C. Crystalline nanorods are obtained by the addition of hydrazine hydrate in a reaction mixture of antimony acetate and/or chloride and sodium selenite in neutral and basic media, while amorphous nanoparticles are formed by the addition of KMnO4 in a reaction mixture of antimony acetate/chloride and sodium selenite. The powder X-ray diffraction pattern confirms orthorhombic phase crystalline Sb2Se3 for the first and second reactions with lattice parameters a=1.120 nm, b=1.128 nm, and c=0.383 nm and amorphous Sb2Se3 for the third reaction. Scanning electron microscopy (SEM, transmission electron microscopy (TEM, and high-resolution TEM (HRTEM images show the diameter of nanorods for the first and second reactions to be in the order of 100 nm to 150 nm and about 20 nm particles for the third reaction. EDX and XPS suggest that the nanorods are pure Sb2Se3. The UV-vis analysis indicates a band gap of 4.14 and 4.97 eV for the crystalline and amorphous Sb2Se3, respectively, corresponding to a blue shift. The photocatalytic study shows that the decolorization of Rhodamine in solution by nanoparticles is slightly greater than nanorods.

Sb{sub 2}S{sub 3}:C/CdS p-n junction by laser irradiation

Energy Technology Data Exchange (ETDEWEB)

Arato, A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia-Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Cardenas, E. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Shaji, S. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia-Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); O' Brien, J.J.; Liu, J. [Center for Nanoscience, University of Missouri-St. Louis, One University Boulevard, St. Louis, Missouri-63121 (United States); Department of Chemistry and Biochemistry, University of Missouri-St. Louis, One University Boulevard, St. Louis, Missouri-63121 (United States); Castillo, G. Alan; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia-Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)], E-mail: bkrishnan@fime.uanl.mx

2009-02-02

In this paper, we report laser irradiated carbon doping of Sb{sub 2}S{sub 3} thin films and formation of a p-n junction photovoltaic structure using these films. A very thin carbon layer was evaporated on to chemical bath deposited Sb{sub 2}S{sub 3} thin films of approximately 0.5 {mu}m in thickness. Sb{sub 2}S{sub 3} thin films were prepared from a solution containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3} at 27 deg. C for 5 h and the films obtained were highly resistive. These C/Sb{sub 2}S{sub 3} thin films were irradiated by an expanded laser beam of diameter approximately 0.5 cm (5 W power, 532 nm Verdi laser), for 2 min at ambient atmosphere. Morphology and composition of these films were analyzed. These films showed p-type conductivity due to carbon diffusion (Sb{sub 2} S{sub 3}:C) by the thermal energy generated by the absorption of laser radiation. In addition, these thin films were incorporated in a photovoltaic structure Ag/Sb{sub 2}S{sub 3}:C/CdS/ITO/Glass. For this, CdS thin film of 50 nm in thickness was deposited on a commercially available ITO coated glass substrate from a chemical bath containing CdCl{sub 2}, sodium citrate, NH{sub 4}OH and thiourea at 70 deg. C . On the CdS film, Sb{sub 2}S{sub 3}/C layers were deposited. This multilayer structure was subjected to the laser irradiation, C/Sb{sub 2}S{sub 3} side facing the beam. The p-n junction formed by p-Sb{sub 2}S{sub 3}:C and n-type CdS showed V{sub oc} = 500 mV and J{sub sc} = 0.5 mA/cm{sup 2} under illumination by a tungsten halogen lamp. This work opens up a new method to produce solar cell structures by laser assisted material processing.

Structural, electrical and magnetic properties of Sb-doped Pr2/3Ba1/3MnO3 perovskite manganites

International Nuclear Information System (INIS)

Sen, Vikram; Panwar, Neeraj; Bhalla, G.L.; Agarwal, S.K.

2007-01-01

We report here the electrical, magnetic and micro-structural features of the Sb-doped (nominally at Mn-sites) Pr 2/3 Ba 1/3 MnO 3 perovskite manganites. Pristine material shows two insulator-metal (I-M) like transitions in the resistivity-temperature (ρ-T) behaviour. While the higher temperature transition (T P1 ) at ∼195 K is reminiscent of the usual metal-insulator transition, the lower temperature transition (T P2 ) at ∼160 K has been ascribed to the grain boundary (GB) effects arising out of the ionic size mismatch between the ions present at the rare-earth site (Pr and Ba). With Sb doping at the Mn-site, both the resistivity peaks are seen to shift to lower temperatures. Room temperature resistivity and the peak values are also successively increasing with Sb doping. Scanning electron micrographs of the samples indicate a gradual increase in their grain sizes with Sb which indicates a gradual decrease in the GB density. The higher temperature insulator-metal transition (T P1 ) shift is explained on the basis of a competition between double-exchange and super-exchange mechanisms. The observed overall resistivity increase and the shift in the resistivity hump (T P2 ) with Sb are found related to the gradually decreasing GB density and the ensuing lattice strain increase at the grain boundaries. The intrinsic MR gets suppressed and the extrinsic MR gets enhanced with Sb doping. The observed low temperature resistivity upturn related to the localization of carriers, is also seen to increase with Sb

Tunable surface wettability and water adhesion of Sb{sub 2}S{sub 3} micro-/nanorod films

Energy Technology Data Exchange (ETDEWEB)

Zhong, Xin; Zhao, Huiping [Key Laboratory for Green Chemical Process of Ministry of Education and Hubei Novel Reactor and Green Chemical Technology Key Laboratory, Wuhan Institute of Technology, Xiongchu Street, Wuhan 430073 (China); Yang, Hao, E-mail: hyangwit@hotmail.com [Key Laboratory for Green Chemical Process of Ministry of Education and Hubei Novel Reactor and Green Chemical Technology Key Laboratory, Wuhan Institute of Technology, Xiongchu Street, Wuhan 430073 (China); Liu, Yunling [State Key laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012 (China); Yan, Guoping [Key Laboratory for Green Chemical Process of Ministry of Education and Hubei Novel Reactor and Green Chemical Technology Key Laboratory, Wuhan Institute of Technology, Xiongchu Street, Wuhan 430073 (China); Chen, Rong, E-mail: rchenhku@hotmail.com [Key Laboratory for Green Chemical Process of Ministry of Education and Hubei Novel Reactor and Green Chemical Technology Key Laboratory, Wuhan Institute of Technology, Xiongchu Street, Wuhan 430073 (China)

2014-01-15

Antimony sulfide (Sb{sub 2}S{sub 3}) films were successfully prepared by spin coating Sb{sub 2}S{sub 3} micro-/nanorods with different sizes on glass slides, which was synthesized via a facile and rapid microwave irradiation method. The prepared Sb{sub 2}S{sub 3} micro-/nanorods and films were characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and water contact angle (CA). The as-prepared Sb{sub 2}S{sub 3} films exhibited different surface wettabilities ranging from superhydrophilicity to superhydrophobicity, which was strongly dependent on the diameter of Sb{sub 2}S{sub 3} micro-/nanorod. Sb{sub 2}S{sub 3} film made by nanorods possessed superhydrophobic surface and high water adhesive property. After surface modification with stearic acid, the superhydrophobic surface exhibited an excellent self-cleaning property owing to its low adhesive force. The clarification of three possible states including Wenzel's state, “Gecko” state and Cassie's state for Sb{sub 2}S{sub 3} film surfaces was also proposed to provide a better understanding of interesting surface phenomena on Sb{sub 2}S{sub 3} films.

纳米 Sb2O3/MMA原位乳液聚合研究%Nano-sized Sb2O3/MMA in-situ emulsion polymerization

Institute of Scientific and Technical Information of China (English)

谭菁; 吴红兵; 胡红春; 张经武; 解孝林

2002-01-01

研究了纳米 Sb2O3/MMA体系的原位乳液聚合反应.结果表明,纳米 Sb2O3对 MMA的聚合无阻聚作用,表面包覆的聚甲基丙烯酸甲酯能有效地解决纳米粒子的团聚问题 .

Thermoelectric properties of P-type Sb2Te3 thick film processed by a screen-printing technique and a subsequent annealing process

International Nuclear Information System (INIS)

Kim, Sun Jin; We, Ju Hyung; Kim, Jin Sang; Kim, Gyung Soo; Cho, Byung Jin

2014-01-01

Highlights: • We report on thermoelectric properties of screen-printed Sb 2 Te 3 thick film. • Subsequent annealing process determines thermoelectric properties of Sb 2 Te 3 film. • Annealing in tellurium powder ambient contributes to tellurium-rich Sb 2 Te 3 film. • Annealing in tellurium powder ambient enhances carrier mobility of Sb 2 Te 3 film. -- Abstract: We herein report the thermoelectric properties of Sb 2 Te 3 thick film fabricated by a screen-printing technique and a subsequent annealing process. Each step of the screen-printing fabrication process of Sb 2 Te 3 thick film is described in detail. It was found that the subsequent annealing process must be carefully designed to achieve good thermoelectric properties of the screen-printed film. The results show that the annealing of the screen-printed Sb 2 Te 3 thick film together with tellurium powder in the same process chamber significantly improves the carrier mobility by increasing the average scattering time of the carrier in the film, resulting in a large improvement of the power factor. By optimizing the annealing process, we achieved a maximum thermoelectric figure-of-merit, ZT, of 0.32 at room temperature, which is slightly higher than that of bulk Sb 2 Te 3 . Because screen-printing is a simple and low-cost process and given that it is easy to scale up to large sizes, this result will be useful for the realization of large, film-type thermoelectric devices

Disordered Zinc in Zn4Sb3 with Phonon-Glass and Electron-Crystal Thermoelectric Properties

Science.gov (United States)

Snyder, G. Jeffrey; Christensen, Mogens; Nishibori, Eiji; Caillat, Thierry; Brummerstedt Iversen, Bo

2004-01-01

By converting waste heat into electricity, thermoelectric generators could be an important part of the solution to today's energy challenges. The compound Zn4Sb3 is one of the most efficient thermoelectric materials known. Its high efficiency results from an extraordinarily low thermal conductivity in conjunction with the electronic structure of a heavily doped semiconductor. Previous structural studies have been unable to explain this unusual combination of properties. Here, we show through a comprehensive structural analysis using single-crystal X-ray and powder-synchrotron-radiation diffraction methods, that both the electronic and thermal properties of Zn4Sb3 can be understood in terms of unique structural features that have been previously overlooked. The identification of Sb3- ions and Sb-2(4-) dimers reveals that Zn4Sb3 is a valence semiconductor with the ideal stoichiometry Zn13Sb10. In addition, the structure contains significant disorder, with zinc atoms distributed over multiple positions. The discovery of glass-like interstitial sites uncovers a highly effective mechanism for reducing thermal conductivity. Thus Zn4Sb3 is in many ways an ideal 'phonon glass, electron crystal' thermoelectric material.

Hole-dominated transport in InSb nanowires grown on high-quality InSb films

Energy Technology Data Exchange (ETDEWEB)

Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, U., E-mail: usha.philipose@unt.edu [University of North Texas, Department of Physics (United States)

2016-12-15

We have developed an effective strategy for synthesizing p-type indium antimonide (InSb) nanowires on a thin film of InSb grown on glass substrate. The InSb films were grown by a chemical reaction between Sb{sub 2}S{sub 3} and In and were characterized by structural, compositional, and optical studies. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal that the surface of the substrate is covered with a polycrystalline InSb film comprised of sub-micron sized InSb islands. Energy dispersive X-ray (EDX) results show that the film is stoichiometric InSb. The optical constants of the InSb film, characterized using a variable-angle spectroscopic ellipsometer (VASE) shows a maximum value for refractive index at 3.7 near 1.8 eV, and the extinction coefficient (k) shows a maximum value 3.3 near 4.1 eV. InSb nanowires were subsequently grown on the InSb film with 20 nm sized Au nanoparticles functioning as the metal catalyst initiating nanowire growth. The InSb nanowires with diameters in the range of 40–60 nm exhibit good crystallinity and were found to be rich in Sb. High concentrations of anions in binary semiconductors are known to introduce acceptor levels within the band gap. This un-intentional doping of the InSb nanowire resulting in hole-dominated transport in the nanowires is demonstrated by the fabrication of a p-channel nanowire field effect transistor. The hole concentration and field effect mobility are estimated to be ≈1.3 × 10{sup 17} cm{sup −3} and 1000 cm{sup 2} V{sup −1} s{sup −1}, respectively, at room temperature, values that are particularly attractive for the technological implications of utilizing p-InSb nanowires in CMOS electronics.

Chemically deposited Sb2S3 thin films for optical recording

International Nuclear Information System (INIS)

Shaji, S; Arato, A; Castillo, G Alan; Palma, M I Mendivil; Roy, T K Das; Krishnan, B; O'Brien, J J; Liu, J

2010-01-01

Laser induced changes in the properties of Sb 2 S 3 thin films prepared by chemical bath deposition are described in this paper. Sb 2 S 3 thin films of thickness 550 nm were deposited from a solution containing SbCl 3 and Na 2 S 2 O 3 at 27 0 C for 5 h. These thin films were irradiated by a 532 nm continuous wave laser beam under different conditions at ambient atmosphere. X-ray diffraction analysis showed amorphous to polycrystalline transformation due to laser exposure of these thin films. Morphology and composition of these films were described. Optical properties of these films before and after laser irradiation were analysed. The optical band gap of the material was decreased due to laser induced crystallization. The results obtained confirm that there is further scope for developing this material as an optical recording media.

The Impact Of The Mcu Life Extension Solvent On Dwpf Glass Formulation Efforts

International Nuclear Information System (INIS)

Peeler, D.; Edwards, T.

2011-01-01

As a part of the Actinide Removal Process (ARP)/Modular Caustic Side Solvent Extraction Unit (MCU) Life Extension Project, a next generation solvent (NG-CSSX), a new strip acid, and modified monosodium titanate (mMST) will be deployed. The strip acid will be changed from dilute nitric acid to dilute boric acid (0.01 M). Because of these changes, experimental testing with the next generation solvent and mMST is required to determine the impact of these changes in 512-S operations as well as Chemical Process Cell (CPC), Defense Waste Processing Facility (DWPF) glass formulation activities, and melter operations at DWPF. To support programmatic objectives, the downstream impacts of the boric acid strip effluent (SE) to the glass formulation activities and melter operations are considered in this study. More specifically, the impacts of boric acid additions to the projected SB7b operating windows, potential impacts to frit production temperatures, and the potential impact of boron volatility are evaluated. Although various boric acid molarities have been reported and discussed, the baseline flowsheet used to support this assessment was 0.01M boric acid. The results of the paper study assessment indicate that Frit 418 and Frit 418-7D are robust to the implementation of the 0.01M boric acid SE into the SB7b flowsheet (sludge-only or ARP-added). More specifically, the projected operating windows for the nominal SB7b projections remain essentially constant (i.e., 25-43 or 25-44% waste loading (WL)) regardless of the flowsheet options (sludge-only, ARP added, and/or the presence of the new SE). These results indicate that even if SE is not transferred to the Sludge Receipt and Adjustment Tank (SRAT), there would be no need to add boric acid (from a trim tank) to compositionally compensate for the absence of the boric acid SE in either a sludge-only or ARP-added SB7b flowsheet. With respect to boron volatility, the Measurement Acceptability Region (MAR) assessments also

Room temperature synthesis of crystalline Sb2S3 for SnO2 ...

Indian Academy of Sciences (India)

attention of researchers owing to their low cost, simple fabrication technique and .... The typical SEM images of as-deposited Sb2S3 in figure 3a show the .... reduce back the excited Sb2S3 to its ground state and to set the system for next ...

Effects of antimony trisulfide (Sb2S3) on sliding friction of automotive brake friction materials

Science.gov (United States)

Lee, Wan Kyu; Rhee, Tae Hee; Kim, Hyun Seong; Jang, Ho

2013-09-01

The effect of antimony trisulfide (Sb2S3) on the tribological properties of automotive brake friction materials was investigated using a Krauss type tribometer and a 1/5 scale dynamometer with a rigid caliper. Results showed that Sb2S3 improved fade resistance by developing transfer films on the disc surface at elevated temperatures. On the other hand, the rubbing surfaces of the friction material exhibited contact plateaus with a broader height distribution when it contained Sb2S3, indicating fewer contact junctions compared to the friction material with graphite. The friction material with Sb2S3 also exhibited a lower stick-slip propensity than the friction material with graphite. The improved fade resistance with Sb2S3 is attributed to its lubricating capability sustained at high temperatures, while the lower stick-slip propensity of the friction material with Sb2S3 is associated with the slight difference between its static and kinetic coefficients of friction and high normal stiffness.

Hole-dominated transport in InSb nanowires grown on high-quality InSb films

Science.gov (United States)

Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, U.

2016-12-01

We have developed an effective strategy for synthesizing p-type indium antimonide (InSb) nanowires on a thin film of InSb grown on glass substrate. The InSb films were grown by a chemical reaction between S b 2 S 3 and I n and were characterized by structural, compositional, and optical studies. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal that the surface of the substrate is covered with a polycrystalline InSb film comprised of sub-micron sized InSb islands. Energy dispersive X-ray (EDX) results show that the film is stoichiometric InSb. The optical constants of the InSb film, characterized using a variable-angle spectroscopic ellipsometer (VASE) shows a maximum value for refractive index at 3.7 near 1.8 eV, and the extinction coefficient (k) shows a maximum value 3.3 near 4.1 eV. InSb nanowires were subsequently grown on the InSb film with 20 nm sized Au nanoparticles functioning as the metal catalyst initiating nanowire growth. The InSb nanowires with diameters in the range of 40-60 nm exhibit good crystallinity and were found to be rich in Sb. High concentrations of anions in binary semiconductors are known to introduce acceptor levels within the band gap. This un-intentional doping of the InSb nanowire resulting in hole-dominated transport in the nanowires is demonstrated by the fabrication of a p-channel nanowire field effect transistor. The hole concentration and field effect mobility are estimated to be ≈1.3 × 1017 cm-3 and 1000 cm2 V-1 s-1, respectively, at room temperature, values that are particularly attractive for the technological implications of utilizing p-InSb nanowires in CMOS electronics.

Laryngoscopy: appraisal of 202 procedures carried out in two ...

African Journals Online (AJOL)

user

Laryngoscopy is a medical procedure that is used to obtain a view of the vocal folds and the glottis. It may be performed to facilitate .... 21.8. Hoarseness. 35. 17.3. Foreign body sensation in the throat. 24. 11.9. Chronic cough. 15. 7.4. Chronic throat pains. 7. 3.5. Dysphagia. 11. 5.4. Difficulty with breathing. 8. 4.0. Total. 202.

Study of interatomic potential and thermal structural properties of β-Zn4Sb3

International Nuclear Information System (INIS)

Li, Guodong; Li, Yao; Liu, Lisheng; Zhang, Qingjie; Zhai, Pengcheng

2012-01-01

Highlights: ► The multi-body interatomic potentials of various models of β-Zn 4 Sb 3 have been developed to describe atomic interactions. ► The radial distribution function shows that the 10% vacancy of Zn site leads to the disorder of β-Zn 4 Sb 3 . ► The 10% vacancy of Zn site is the main cause of the exceptional low thermal conductivity. -- Abstract: Previous experimental research shows that the disordered Zn atoms in β-Zn 4 Sb 3 may have an important influence on its exceptionally low thermal conductivity and easily occurred phase transition. So the present work aims to study the influence of disordered Zn atoms on thermodynamics properties of β-Zn 4 Sb 3 by using molecular dynamics (MD) method. Firstly, based on first principles calculation and experimental results, the interatomic potentials of β-Zn 4 Sb 3 and MD analysis method are established, and the feasibility is verified. Then, the influence of disordered Zn atoms on thermal conductivity of β-Zn 4 Sb 3 is studied in detail. The simulation results indicate that the 10% vacant Zn atoms is the main reason for the exceptionally low thermal conductivity of β-Zn 4 Sb 3 , and it seems that the interstitial Zn atoms have little effect on its thermal conductivity.

Thermoelectric properties of quaternary (Bi,Sb){sub 2}(Te,Se){sub 3} compound

Energy Technology Data Exchange (ETDEWEB)

Lu, Pengfei, E-mail: photon.bupt@gmail.com [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, P.O. Box 72, Beijing 100876 (China); Li, Yiluan; Wu, Chengjie; Yu, Zhongyuan; Cao, Huawei; Zhang, Xianlong; Cai, Ningning; Zhong, Xuxia [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, P.O. Box 72, Beijing 100876 (China); Wang, Shumin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg (Sweden)

2014-01-25

Highlights: • Sb and Se spin–orbit coupling play a key role in the band structure. • Substituted Bi/Sb and Te/Se have a limited impact on the transport coefficients. • n-Type doping will be preferred for quaternary (Bi,Sb){sub 2}(Te,Se){sub 3} compound. -- Abstract: The quaternary (Bi,Sb){sub 2}(Te,Se){sub 3} compounds are investigated using first-principles study and Boltzmann transport theory. The energy band structure and density of states are studied in detail. The electronic transport coefficients are then calculated as a function of chemical potential. The figure of merit ZT is obtained assuming a constant relaxation time and an averaged thermal conductivity. Our theoretical result agrees well with previous experimental data.

Evaluation of the novel 5-HT4 receptor PET ligand [11C]SB207145 in the Gottingen minipig

DEFF Research Database (Denmark)

Kornum, B.R.; Lind, N.M.; Gillings, N.

2009-01-01

This study investigates 5-hydroxytryptamine 4 (5-HT(4)) receptor binding in the minipig brain with positron emission tomography (PET), tissue homogenate-binding assays, and autoradiography in vitro. The cerebral uptake and binding of the novel 5-HT(4) receptor radioligand [(11)C]SB207145 in vivo...... was modelled and the outcome compared with postmortem receptor binding. Different models for quantification of [(11)C]SB207145 binding were evaluated: One-tissue and two-tissue compartment kinetic modelling, Logan arterial input, and three different reference tissue models. We report that the pig...... model provides stable and precise estimates of the binding potential in all regions. The binding potentials calculated for striatum, midbrain, and cortex from the PET data were highly correlated with 5-HT(4) receptor concentrations determined in brain homogenates from the same regions, except...

Characterization of Ge Doping on Sb_2Te_3 for High-Speed Phase Change Memory Application

International Nuclear Information System (INIS)

Zhu Yue-Qin; Xie Hua-Qing; Zhang Zhong-Hua; Song San-Nian; Song Zhi-Tang; Shen Lan-Lan; Li Le; Wu Liang-Cai; Liu Bo

2015-01-01

The phase change material of Ge-doped Sb_2Te_3 is shown to have higher crystallization temperature and better thermal stability compared with pure Sb_2Te_3. Ge_0_._1_1Sb_2Te_3 alloys are considered to be a potential candidate for phase change random access memories, as proved by a higher crystallization temperature, a better data retention ability, and a faster switching speed in comparison with those of Ge_2Sb_2Te_5. In addition, Ge_0_._1_1Sb_2Te_3 presents extremely rapid reverse switching speed (10 ns), and up to 10"5 programming cycles are obtained with stable set and reset resistances. (paper)

Characterization of basic physical properties of Sb2Se3 and its relevance for photovoltaics

Institute of Scientific and Technical Information of China (English)

Chao CHEN; Matthew C.BEARD; Jiang TANG; David C.BOBELA; Ye YANG; Shuaicheng LU; Kai ZENG; Cong GE; Bo YANG; Liang GAO; Yang ZHAO

2017-01-01

Antimony selenide (Sb2Se3) is a promising absorber material for thin film photovoltaics because of its attractive material,optical and electrical properties.In recent years,the power conversion efficiency (PCE) of Sb2Se3 thin film solar cells has gradually enhanced to 5.6％.In this article,we systematically studied the basic physical properties of Sb2Se3 such as dielectric constant,anisotropic mobility,carrier lifetime,diffusion length,defect depth,defect density and optical band tail states.We believe such a comprehensive characterization of the basic physical properties of Sb2Se3 lays a solid foundation for further optimization of solar device performance.

48 CFR 1019.202-70-3 - Non-affiliation.

Science.gov (United States)

2010-10-01

... SOCIOECONOMIC PROGRAMS SMALL BUSINESS PROGRAMS Policies 1019.202-70-3 Non-affiliation. For purposes of the Small Business Act, a protégé firm may not be considered an affiliate of a mentor firm solely on the basis that... mentor firm under the Program. ...

Large-scale synthesis of double cauliflower-like Sb2S3 microcrystallines by hydrothermal method

International Nuclear Information System (INIS)

Wu, Lei; Xu, Hanyue; Han, Qiaofeng; Wang, Xin

2013-01-01

Highlights: •Highly uniform double cauliflower-like Sb 2 S 3 particles were synthesized via hydrothermal method. •Influence of reaction conditions on the morphology of the products was discussed. •Double cauliflower-like Sb 2 S 3 superstructures revealed broad spectrum response. -- Abstract: The double cauliflower-like Sb 2 S 3 superstructures assembled by nanorods were prepared using SbCl 3 and Na 2 S⋅9H 2 O as raw materials, dodecyltrimethylammonium bromide (DTAB, C 15 H 31 BrN) as surfactant under acidic condition at 180 °C for 30 h. The structure, morphology and composition of the product were characterized by X-ray diffraction pattern (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and energy diffraction spectroscopy (EDS). The effect of reaction conditions including temperature, reaction time and surfactants on the sample morphology was discussed and a possible mechanism for the formation of cauliflower-like Sb 2 S 3 was proposed. The cauliflower-like Sb 2 S 3 microcrystallines revealed broad spectrum response, which may have a good application prospect in solar energy utilization and photoelectric conversion fields

Microstructure and thermoelectric properties of doped p-type CoSb3 under TGZM effect

Science.gov (United States)

Wang, Hongqiang; Li, Shuangming; Li, Xin; Zhong, Hong

2017-05-01

The Co-96.9 wt% Sb hypoeutectic alloy doped by 0.12 wt% YbFe was solidified in a Bridgman-type furnace based on temperature gradient zone melting (TGZM) effect. A mushy zone was observed between the complete liquid zone and the solid zone at different thermal stabilization time ranging from 15 min to 40 h. The mushy-zone solidified microstructures of the alloy only consist of CoSb3 and Sb phase. After 40 h thermal stabilization time, the volume fraction of CoSb3 in the mushy zone increases significantly up to 99.6% close to the solid-liquid interface. The hardness and fracture toughness of doped CoSb3 can reach 7.01 ± 0.69 GPa and 0.78 ± 0.08 MPa·m1/2, respectively. Meanwhile, the thermoelectric properties of the alloy were measured ranging from room temperature (RT) to 850 K. The Seebeck coefficient of the specimen prepared by TGZM effect after 40 h could reach 155 μV/K and the ZT value is 0.47 at 660 K, showing that it is feasible to prepare CoSb3 bulk material via TGZM effect. As a simple and one-step solidification method, the TGZM technique could be applied in the preparation of skutterudite compounds.

A green and facile hydrothermal approach for the synthesis of high-quality semi-conducting Sb{sub 2}S{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Liu, Meng; Gong, Yongshuai; Li, Zhilin; Dou, Meiling, E-mail: douml@mail.buct.edu.cn; Wang, Feng, E-mail: wangf@mail.buct.edu.cn

2016-11-30

Highlights: • A green and facile hydrothermal approach for Sb{sub 2}S{sub 3} films was developed. • The film possessed a relatively ideal S/Sb atomic ratio and a compact surface. • The grain size of Sb{sub 2}S{sub 3} was increased by high temperature annealing. • The film annealed at 450 °C showed the improved optical and electrical performance. - Abstract: High-quality semi-conducting antimony sulfide (Sb{sub 2}S{sub 3}) thin films were directly deposited on the indium tin oxide (ITO) substrates by a green and facile one-step approach based on a hydrothermal reaction and post-annealing process without any assistance of complexing agents. The obtained Sb{sub 2}S{sub 3} films possessed a relatively ideal S/Sb atomic ratio and a compact and continuous surface as the grain size of Sb{sub 2}S{sub 3} was increased by high temperature annealing. The Sb{sub 2}S{sub 3} film annealed at 450 °C exhibited the improved optical and electrical performances, with a narrow band gap of 1.63 eV, an electrical resistivity of 1.3 × 10{sup 4} Ω cm, a carrier concentration of 7.3 × 10{sup 13} cm{sup −3} and a carrier mobility of 6.4 cm{sup 2} V{sup −1} s{sup −1}. This environmentally friendly synthetic route is promising for the preparation of high-quality Sb{sub 2}S{sub 3} films to be used as absorber layer materials for high-performance solar cells.

Phase stability and lattice thermal conductivity reduction in CoSb{sub 3} skutterudites, doped with chalcogen atoms

Energy Technology Data Exchange (ETDEWEB)

Battabyal, M., E-mail: manjusha.battabyal@project.arci.res.in; Priyadarshini, B.; Gopalan, R. [International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), IIT M Research Park, Taramani, Chennai-600113 (India); Pradipkanti, L.; Satapathy, Dillip K. [Department of Physics, Indian Institute of Technology Madras, Chennai-600036 (India)

2016-07-15

We report a significant reduction in the lattice thermal conductivity of the CoSb{sub 3} skuttertudites, doped with chalcogen atoms. Te/Se chalcogen atoms doped CoSb{sub 3} skutterudite samples (Te{sub 0.1}Co{sub 4}Sb{sub 12}, Se{sub 0.1}Co{sub 4}Sb{sub 12}, Te{sub 0.05}Se{sub 0.05}Co{sub 4}Sb{sub 12}) are processed by ball milling and spark plasma sintering. X-ray diffraction data combined with energy dispersive X-ray spectra indicate the doping of Te/Se chalcogen atoms in the skutterudite. The temperature dependent X-ray diffraction confirms the stability of the Te/Se doped CoSb{sub 3} skutterudite phase and absence of any secondary phase in the temperature range starting from 300 K to 773 K. The Raman spectroscopy reveals that different chalcogen dopant atoms cause different resonant optical vibrational modes between the dopant atom and the host CoSb{sub 3} skutterudite lattice. These optical vibrational modes do scatter heat carrying acoustic phonons in a different spectral range. It was found that among the Te/Se chalcogen atoms, Te atoms alter the host CoSb{sub 3} skutterudite lattice vibrations to a larger extent than Se atoms, and can potentially scatter more Sb related acoustic phonons. The Debye model of lattice thermal conductivity confirms that the resonant phonon scattering has important contributions to the reduction of lattice thermal conductivity in CoSb{sub 3} skutterudites doped with Te/Se chalcogen atoms. Lattice thermal conductivity ∼ 0.9 W/mK at 773 K is achieved in Te{sub 0.1}Co{sub 4}Sb{sub 12} skutterudites, which is the lowest value reported so far in CoSb{sub 3} skutterudites, doped with single Te chalcogen atom.

Evidence for surface-generated photocurrent in (Bi,Sb)2Se3and(Bi,Sb)2Te3 thin films

Science.gov (United States)

Pan, Yu; Richardella, Anthony; Yao, Bing; Lee, Joon Sue; Flanagan, Thomas; Kandala, Abhinav; Samarth, Nitin; Yeats, Andrew; Mintun, Peter; Awschalom, David

2015-03-01

Illumination with circularly polarized light is known produce a helicity-dependent photocurrent in topological insulators such as Bi2Se3 [e.g. Nature Nanotech. 7, 96 (2012)]. However, the exact origin of this effect is still unclear since it is observed with photons well above the bulk band gap. We report measurements of the polarization-dependent photocurrent in a series of (Bi,Sb)2Se3 thin films with different carrier concentrations and find that the photocurrent is enhanced as we increase the population of the surface states. This finding is supported by a study of helicity-dependent photocurrents in back-gated (Bi,Sb)2Te3 thin films, where the chemical potential is varied electrostatically. By illuminating our samples at different wavelengths, we show that the helicity-dependent photocurrent is enhanced when the photon energy approaches the energy difference between the lowest and first excited (unoccupied) topological surface states. This leads us to attribute the helicity-dependent photocurrent in topological insulators to optical excitations between these two spin-textured surface states. We will also discuss experiments imaging the spatial variation of these helicity-dependent photocurrents. This work is supported by ONR.

Pulsed laser deposited heterogeneous mixture of Li2Se-Sb2Se3 nanocomposite as a new storage lithium material

International Nuclear Information System (INIS)

Yu Le; Chen Jie; Fu Zhengwen

2010-01-01

Li 2 Se-Sb 2 Se 3 nanocomposites with a highly heterogeneous mixture have been fabricated by reactive pulsed laser deposition method. The electrochemical properties of the as-deposited Li 2 Se-Sb 2 Se 3 thin film during the first charging and discharging have been investigated by the galvanostatic cycling and cyclic voltammetry measurements for the first time. By using ex situ X-ray diffraction (XRD), X-ray photoelectron spectra (XPS), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), and selected-area electron diffraction (SAED) measurements, the decomposition of Li 2 Se driven by Sb 2 Se 3 under the electrochemical potential is revealed. In the first cycle, the oxidation peaks at 2.5 V and 3.2 V and the reduction peaks at 2.0 V can be attributed to the decomposition and formation of Li 2 Se with the conversion reaction of Sb 2 Se 3 into Sb 2 Se 5 . Our findings demonstrate that nanocomposite Li 2 Se-Sb 2 Se 3 can possess very high electrochemical activity. These results present a special case of solid-state heterogeneous electrochemistry with both nanostructured binary materials.

Synthesis, radiosynthesis and biological evaluation of quinoline carboxamide analogues of Talnetant (SB 223412) to study by PET or SPECT imaging the NK-3 receptor

International Nuclear Information System (INIS)

Bennacef, Idriss

2003-01-01

With the aim of visualizing NK-3 receptors in vivo by medical imaging techniques (positron emission tomography and single photon emission computed tomography), the synthesis of novel 2-phenylquinoline-4-carboxamides, derived from SB 223412 or SB 222 200, two non peptide potent (hNK-3-CHO: K i = 1.0 nM; K i = 4.4 nM respectively) and selective (NK-3/NK-1 ≥10 5 ) human NK-3 receptor antagonists, has been studied. The compounds obtained are characterized by the presence, on the quinoline moiety, of an atom of carbon, fluorine or iodine that can be substituted by their β + emitter (carbon-11, t(1/2) = 20 min; fluorine-18, t(1/2) = 110 min) or γ emitter (iodine-123, t(1/2) = 13 h) radio-isotopes. Monohalogenated (fluorinated or iodinated) quinolines were prepared using an efficient synthesis based on the Pfitzinger reaction. Di-halogenated analogues, bearing both an iodine and a fluorine atom, were obtained via a regioselective ortho-metalation reaction. Biological evaluation of these compounds led to the determination of potent and selective structures towards the NK-3 receptor, for which labeling will be envisaged. Functionalization in position 3 of quinoline-4-carboxamides, using a directed metalation reaction, allowed the introduction of various (hetero)elements (chlorine, bromine, iodine, trialkystannyle or silyle moiety). This research allowed to perform the radiosynthesis of [ 11 C]SB 222200 using a Stille coupling with [ 11 C]iodomethane. (author) [fr

Photovoltaic Performance of Vapor-Assisted Solution-Processed Layer Polymorph of Cs3Sb2I9.

Science.gov (United States)

Singh, Anupriya; Boopathi, Karunakara Moorthy; Mohapatra, Anisha; Chen, Yang Fang; Li, Gang; Chu, Chih Wei

2018-01-24

The presence of toxic lead (Pb) remains a major obstruction to the commercial application of perovskite solar cells. Although antimony (Sb)-based perovskite-like structures A 3 M 2 X 9 can display potentially useful photovoltaic behavior, solution-processed Sb-based perovskite-like structures usually favor the dimer phase, which has poor photovoltaic properties. In this study, we prepared a layered polymorph of Cs 3 Sb 2 I 9 through solution-processing and studied its photovoltaic properties. The exciton binding energy and exciton lifetime of the layer-form Cs 3 Sb 2 I 9 were approximately 100 meV and 6 ns, respectively. The photovoltaic properties of the layered polymorph were superior to those of the dimer polymorph. A solar cell incorporating the layer-form Cs 3 Sb 2 I 9 exhibited an open-circuit voltage of 0.72 V and a power conversion efficiency of 1.5%-the highest reported for an all-inorganic Sb-based perovskite.

Thermoelectric properties of high pressure synthesized lithium and calcium double-filled CoSb3

Directory of Open Access Journals (Sweden)

Xiaohui Li

2017-01-01

Full Text Available Lithium and calcium are inefficient filling elements of CoSb3 at ambient pressure, but show nice filling behavior under high pressure. In this work, we synthesized Li/Ca double-filled CoSb3 with high pressure synthesis method. The products show the skutterudite structure of Im3¯ symmetry. Thermoelectric properties were effectively enhanced through Li and Ca co-filling. For the optimal Li0.08Ca0.18Co4Sb12 sample, the power factor maintains a relatively high value over the whole measurement temperature range and peaks at 4700μWm−1K−2, meanwhile the lattice thermal conductivity is greatly suppressed, leading to a maximal ZT of 1.18 at 700 K. Current work demonstrates high pressure synthesis as an effective method to produce multiple elemental filled CoSb3 skutterudites.

Effect of tungsten on the phase-change properties of Ge{sub 8}Sb{sub 2}Te{sub 11} Thin Films for the Phase-change device

Energy Technology Data Exchange (ETDEWEB)

Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin [Chonnam National University, Gwangju (Korea, Republic of)

2017-07-15

In this study, the electrical, optical, and structural properties of tungsten (W)-doped Ge{sub 8}Sb{sub 2}Te{sub 11} thin films were investigated. Previously, GeSbTe alloys were doped with various materials in an attempt to improve the thermal stability. Ge{sub 8}Sb{sub 2}Te{sub 11} and W-doped Ge{sub 8}Sb{sub 2}Te{sub 11} films with a thickness of 200 nm were fabricated by using an RF magnetron reactive co-sputtering system at room temperature on Si (p-type, 100) and glass substrate. The fabricated thin films were annealed in a furnace in the ∼ 0 - 400 ℃ temperature range. The optical properties were analyzed using a UV-Vis-IR spectrophotometer, and by using Beer’s Law equation, the optical-energy band gap (E{sub op}), slope B{sup 1/2}, and slope 1/F were calculated. For the crystalline materials, an increase in the slope B{sup 1/2} and 1/F was observed, exhibiting a good effect on the thermal stability in the amorphous state after the phase change. The structural properties were analyzed by X-ray diffraction, and the result showed that the W-doped Ge{sub 8}Sb{sub 2}Te{sub 11} had a face-centered-cubic (fcc) crystalline structure increased crystallization temperature (T{sub c}). An increase in the T{sub c} increased the thermal stability in the amorphous state. The electrical properties were analyzed using a 4-point probe, exhibiting an increase in the sheet resistance (R{sub s}) in the amorphous and the crystalline states indicating a reduced programming current in the memory device.

Compositional and structural characterisation of GaSb and GaInSb

International Nuclear Information System (INIS)

Corregidor, V.; Alves, E.; Alves, L.C.; Barradas, N.P.; Duffar, Th.; Franco, N.; Marques, C.; Mitric, A.

2005-01-01

Low band gap III-V semiconductors are researched for applications in thermophotovoltaic technology. GaSb crystal is often used as a substrate. Ga 1-x In x Sb is also a promising substrate material, because its lattice parameters can be adjusted by controlling x. We used a new method to synthesise GaSb and GaInSb, in which a high frequency alternate magnetic field is used to heat, to melt and to mix the elements. We present a compositional and structural characterisation of the materials using a combination of complementary techniques. Rutherford backscattering was used to determine accurately the composition of the GaSb. With proton induced X-ray emission in conjunction with a 3 x 3 μm 2 micro-beam we studied the homogeneity of the samples. Structural analysis and phase identification were done with X-ray diffraction. The results for GaSb show a homogeneous composition while the GaInSb samples were found to be strongly heterogeneous at the end of the ingot. The ingots produced are competitive feed material, when compared to other growth techniques, to be used in a second step for the production of good quality ternary crystals

Impact of Spherical Frit Beads on Simulated DWPF Slurries

International Nuclear Information System (INIS)

SMITH, MICHAEL

2005-01-01

It has been shown that the rheological properties of simulated Defense Waste Processing Facility (DWPF) melter feed with the glass former frit as mostly (90 weight percent) solid spherical particles (referred to as beads) were improved as the feed was less viscous as compared to DWPF melter feed that contained the normal irregular shaped frit particles. Because the physical design of the DWPF Slurry Mix Evaporator (SME), Melter Feed Tank (MFT), and melter feed loop are fixed, the impact of changing the rheology might be very beneficial. Most importantly, higher weight percent total solids feed might be processed by reducing the rheological properties (specifically yield stress) of the feed. Additionally, if there are processing problems, such as air entrainment or pumping, these problems might be alleviated by reducing the rheological properties, while maintaining targeted throughputs. Rheology modifiers are chemical, physical, or a combination of the two and can either thin or thicken the rheology of the targeted slurry. The beads are classified as a physical rheological modifier in this case. Even though the improved rheological properties of the feed in the above mentioned DWPF tanks could be quite beneficial, it is the possibility of increased melt rate that is the main driver for the use of beaded glass formers. By improving the rheological properties of the feed, the weight percent solids of the feed could be increased. This higher weight percent solids (less water) feed could be processed faster by the melter as less energy would be required to evaporate the water, and more would be available for the actual melting of the waste and the frit. In addition, the use of beads to thin the feed could possibly allow for the use of a lower targeted acid stoichiometry in the feed preparation process (if in fact acid stoichiometry is being driven by feed rheology as opposed to feed chemistry). Previous work by the Savannah River National Laboratory (SRNL) with the lab

Evaluation of the novel 5-HT4 receptor PET ligand [11C]SB207145 in the Göttingen minipig

DEFF Research Database (Denmark)

Kornum, Birgitte R; Lind, Nanna M; Gillings, Nic

2009-01-01

This study investigates 5-hydroxytryptamine 4 (5-HT(4)) receptor binding in the minipig brain with positron emission tomography (PET), tissue homogenate-binding assays, and autoradiography in vitro. The cerebral uptake and binding of the novel 5-HT(4) receptor radioligand [(11)C]SB207145 in vivo...... was modelled and the outcome compared with postmortem receptor binding. Different models for quantification of [(11)C]SB207145 binding were evaluated: One-tissue and two-tissue compartment kinetic modelling, Logan arterial input, and three different reference tissue models. We report that the pig...... model provides stable and precise estimates of the binding potential in all regions. The binding potentials calculated for striatum, midbrain, and cortex from the PET data were highly correlated with 5-HT(4) receptor concentrations determined in brain homogenates from the same regions, except...

Phase diagram of the Sb-Se-I system and thermodynamic properties of SbSeI

International Nuclear Information System (INIS)

Aliev, Z.S.; Musaeva, S.S.; Babanly, D.M.; Shevelkov, A.V.; Babanly, M.B.

2010-01-01

The Sb-Se-I system was investigated by using the DTA and XRD analyses and EMF measurements with an antimony electrode. The T-x diagram of the binary Sb-I system was accurately redefined. A number of polythermal sections and the projection of the liquidus surface were constructed. The fields of the primary crystallization, as well as the types and coordinates of non- and monovariant equilibria were determined. It is shown that the quasi-binary sections Sb 2 Se 3 -SbI 3 , Sb-SbSeI, SbI 3 -Se, and SbSeI-Se triangulate the Sb-Se-I system, leading to five independent subsystems. A broad area of immiscibility, that overlaps a certain part of the antimony primary crystallization field, was found. From the EMF measurements, the partial molar functions of antimony (ΔG-bar, ΔH-bar, ΔS-bar) as well as standard integral thermodynamic functions of SbSeI were calculated. The latter were found to have the following values: ΔG f,298 0 =-80.12±1.81kJ/mol; ΔH f,298 0 =-77.3±1.8kJ/mol; S 298 0 =155.2±9.5J/(molK).

Phase diagram of the Sb-Se-I system and thermodynamic properties of SbSeI

Energy Technology Data Exchange (ETDEWEB)

Aliev, Z S; Musaeva, S S; Babanly, D M [Baku State University, General and Inorganic Chemistry Department (Azerbaijan); Shevelkov, A.V., E-mail: shev@inorg.chem.msu.r [Moscow Lomonosov State University, Chemistry Department (Russian Federation); Babanly, M.B., E-mail: Babanly_mb@rambler.r [Baku State University, General and Inorganic Chemistry Department (Azerbaijan)

2010-09-03

The Sb-Se-I system was investigated by using the DTA and XRD analyses and EMF measurements with an antimony electrode. The T-x diagram of the binary Sb-I system was accurately redefined. A number of polythermal sections and the projection of the liquidus surface were constructed. The fields of the primary crystallization, as well as the types and coordinates of non- and monovariant equilibria were determined. It is shown that the quasi-binary sections Sb{sub 2}Se{sub 3}-SbI{sub 3}, Sb-SbSeI, SbI{sub 3}-Se, and SbSeI-Se triangulate the Sb-Se-I system, leading to five independent subsystems. A broad area of immiscibility, that overlaps a certain part of the antimony primary crystallization field, was found. From the EMF measurements, the partial molar functions of antimony ({Delta}G-bar, {Delta}H-bar, {Delta}S-bar) as well as standard integral thermodynamic functions of SbSeI were calculated. The latter were found to have the following values: {Delta}G{sub f,298}{sup 0}=-80.12{+-}1.81kJ/mol; {Delta}H{sub f,298}{sup 0}=-77.3{+-}1.8kJ/mol; S{sub 298}{sup 0}=155.2{+-}9.5J/(molK).

Ultrasonic dispersion and off-center rattling in heavy fermion superconductor PrOs4Sb12

International Nuclear Information System (INIS)

Nemoto, Yuichi; Ueno, Takafumi; Takeda, Naoya; Yamaguchi, Takashi; Yanagisawa, Tatsuya; Goto, Terutaka; Sugawara, Hitoshi; Sato, Hideyuki

2006-01-01

Ultrasonic attenuation measurements have been firstly performed for a large single crystal of PrOs 4 Sb 12 with the dimensions of 5.97x0.6x0.6mm 3 . Remarkable frequency dependence around 20-40K has been observed in the elastic constant and attenuation coefficient of the longitudinal C 11 mode associated with E g symmetry strain in part, which results from a thermally activated off-center rattling with E g symmetry of a Pr ion inside a Sb icosahedron cage. Parameters of a characteristic time τ 0 =3.1x10 -11 s and an activation energy E=225K were obtained. This E g rattling involving a local charge fluctuation inside a Sb cage periodically arranged may couple to the conduction electrons. As a result, the electron-phonon coupling would lead to heavy fermion and its superconductivity in PrOs 4 Sb 12

Crystal and magnetic study of the disordered perovskites Ca(Mn{sub 0.5}Sb{sub 0.5})O{sub 3} and Ca(Fe{sub 0.5}Sb{sub 0.5})O{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Retuerto, M., E-mail: mretuerto@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, CSIC, Energia, Medio Ambiente y Tecnologias Sostenibles, Sor Juana Ines de la Cruz 3, Cantoblanco, E-28049 Madrid (Spain); Martinez-Lope, M.J.; Garcia-Hernandez, M. [Instituto de Ciencia de Materiales de Madrid, CSIC, Energia, Medio Ambiente y Tecnologias Sostenibles, Sor Juana Ines de la Cruz 3, Cantoblanco, E-28049 Madrid (Spain); Munoz, A. [Departamento de Fisica Aplicada, EPS, Universidad Carlos III, Avda. Universidad 30, E-28911 Leganes-Madrid (Spain); Fernandez-Diaz, M.T. [Institut Max Von Laue Paul Langevin, F-38042 Grenoble (France); Alonso, J.A. [Instituto de Ciencia de Materiales de Madrid, CSIC, Energia, Medio Ambiente y Tecnologias Sostenibles, Sor Juana Ines de la Cruz 3, Cantoblanco, E-28049 Madrid (Spain)

2010-10-15

We have investigated the double perovskites Ca{sub 2}MSbO{sub 6} (M = Mn, Fe) that have been prepared by solid-state reaction (M = Fe) and wet chemistry procedures (M = Mn). The crystal and magnetic structures have been studied from X-ray (XRD) and neutron powder diffraction (NPD) data. Rietveld refinements show that the crystal structures are orthorhombic (space group Pbnm) with complete disorder of M and Sb cations, so the formula should be rewritten as Ca(M{sub 0.5}Sb{sub 0.5})O{sub 3}. Due to this disorder no evidences of Jahn-Teller distortion can be observed in the MnO{sub 6} octahedra of Ca(Mn{sub 0.5}Sb{sub 0.5})O{sub 3}, in contrast with the ordered double perovskite Sr{sub 2}MnSbO{sub 6}. Ca(Fe{sub 0.5}Sb{sub 0.5})O{sub 3} behaves as an antiferromagnet with an ordered magnetic moment for Fe{sup 3+} of 1.53(4){mu}{sub B} and a propagation vector k = 0, as investigated by low-temperature NPD. The antiferromagnetic ordering is a result of the high degree of Fe/Sb anti-site disorder of the sample, which originates the spontaneous formation of Fe-rich islands, characterized by the presence of strong Fe-O-Fe antiferromagnetic couplings with enough long-range coherence to produce a magnetic contribution perceptible by NPD. By contrast, the magnetic structure of Ca(Mn{sub 0.5}Sb{sub 0.5})O{sub 3} cannot be observed by low-temperature NPD because the magnitude of the ordered magnetic moments is below the detection threshold for neutrons.

Colligative thermoelectric transport properties in n-type filled CoSb3 determined by guest electrons in a host lattice

International Nuclear Information System (INIS)

Lim, Young Soo; Park, Kwan-Ho; Tak, Jang Yeul; Lee, Soonil; Seo, Won-Seon; Park, Cheol-Hee; Kim, Tae Hoon; Park, PumSuk; Kim, Il-Ho; Yang, Jihui

2016-01-01

Among many kinds of thermoelectric materials, CoSb 3 has received exceptional attention for automotive waste heat recovery. Its cage structure provides an ideal framework for the realization of phonon-glass electron-crystal strategy, and there have been numerous reports on the enhanced thermoelectric performance through the independent control of the thermal and electrical conductivity by introducing fillers into its cage sites. Herein, we report colligative thermoelectric transport properties in n-type CoSb 3 from the viewpoint of “guest electrons in a host lattice.” Both the Seebeck coefficient and the charge transport properties are fundamentally determined by the concentration of the guest electrons, which are mostly donated by the fillers, in the conduction band of the host CoSb 3 . Comparing this observation to our previous results, colligative relations for both the Seebeck coefficient and the mobility were deduced as functions of the carrier concentration, and thermoelectric transport constants were defined to predict the power factor in filled CoSb 3 . This discovery not only increases the degree of freedom for choosing a filler but also provides the predictability of power factor in designing and engineering the n-type filled CoSb 3 materials.

First-principles study of the amorphous In3SbTe2 phase change compound

Science.gov (United States)

Los, Jan H.; Kühne, Thomas D.; Gabardi, Silvia; Bernasconi, Marco

2013-11-01

Ab initio molecular dynamics simulations based on density functional theory were performed to generate amorphous models of the phase change compound In3SbTe2 by quenching from the melt. In-Sb and In-Te are the most abundant bonds with only a minor fraction of Sb-Te bonds. The bonding geometry in the amorphous phase is, however, strongly dependent on the density in the range 6.448-5.75 g/cm3 that we investigated. While at high density the bonding geometry of In atoms is mostly octahedral-like as in the cubic crystalline phase of the ternary compound In3SbTe2, at low density we observed a sizable fraction of tetrahedral-like geometries similar to those present in the crystalline phase of the two binary compounds InTe and InSb that the ternary system can be thought to be made of. We show that the different ratio between octahedral-like and tetrahedral-like bonding geometries has fingerprints in the optical and vibrational spectra.

Crystal structure, chemical bond and enhanced performance of β-Zn4Sb3 compounds with interstitial indium dopant

International Nuclear Information System (INIS)

Tang, Dingguo; Zhao, Wenyu; Yu, Jian; Wei, Ping; Zhou, Hongyu; Zhu, Wanting; Zhang, Qingjie

2014-01-01

Highlights: • The interstitial In dopant leads to the local structural perturbations in β-Zn 4 Sb 3 . • The simultaneous increases in α and σ are observed in the In-doped Zn 4 Sb 3 compounds. • The In dopant plays different doping behaviors by the dopant contents in the samples. • A maximum ZT of 1.41 at 700 K is achieved for the In-doped Zn 4 Sb 3 compounds. - Abstract: In-doped β-Zn 4 Sb 3 compounds (Zn 4−x In x Sb 3 , 0 ⩽ x ⩽ 0.24) were prepared by melt-quenching and spark plasma sintering technology in the work. The resultant samples were systematically investigated by X-ray diffraction, X-ray photoelectron spectroscopy, differential scanning calorimetry and thermoelectric property measurements. The In dopant was identified to preferentially occupy the interstitial site in β-Zn 4 Sb 3 and led to the local structural perturbations near the 12c Sb2 and 36f Zn1 sites. The Auger parameters of Zn and Sb indicated that the increase in the valence of Zn was attributed to the charge transfer from Zn to In atoms. The binding energies of In 3d 5/2 core level showed that the interstitial In dopant was n-type dopant (In 3+ ) in slightly In-doped Zn 4−x In x Sb 3 , but acted as acceptor and was p-type dopant (In + ) in heavily In-doped ones. The discovery provides a reasonable explanation for the puzzled relation between σ and x for Zn 4−x In x Sb 3 . Simultaneously increasing the electrical conductivity and Seebeck coefficient of Zn 4−x In x Sb 3 can be realized through the local structural perturbations. The significantly enhanced power factor and the intrinsic low thermal conductivity resulted in a remarkable increase in the dimensionless figure of merit (ZT). The highest ZT reached 1.41 at 700 K for Zn 3.82 In 0.18 Sb 3 and increased by 68% compared with that of the undoped β-Zn 4 Sb 3

Influence of the nucleobase on the physicochemical characteristics and biological activities of Sb{sup V}-ribonucleoside complexes

Energy Technology Data Exchange (ETDEWEB)

Ferreira, Claudio S.; Demicheli, Cynthia, E-mail: demichel@netuno.lcc.ufmg.b [Universidade Federal de Minas Gerais (UFMG), Belo Horizonte, MG (Brazil). Dept. de Quimica; Rocha, Iara C.M. da; Melo, Maria N. [Universidade Federal de Minas Gerais (UFMG), Belo Horizonte, MG (Brazil). Dept. de Parasitologia; Monte Neto, Rubens L.; Frezard, Frederic [Universidade Federal de Minas Gerais (UFMG), Belo Horizonte, MG (Brazil). Dept. de Fisiologia e Biofisica

2010-07-01

The influence of the nucleobase (uracyl, U; cytosine, C; adenine, A; guanine, G) on the physicochemical characteristics and in vitro biological activities of Sb{sup V}-ribonucleoside complexes has been investigated. The 1:1 Sb-U and Sb-C complexes were characterized by NMR and ESI-MS spectroscopies and elemental analysis. The stability constant and the apparent association and dissociation rate constants of 1:1 Sb{sup V}-U, Sb{sup V}-C and Sb{sup V}-A complexes were determined. Although Sb{sup V} most probably binds via oxygen atoms to the same 2' and 3' positions in the different nucleosides, the ribose conformational changes and the physicochemical characteristics of the complex depend on the nucleobase. The nucleobase had a strong influence on the cytotoxicity against macrophages and the antileishmanial activity of the Sb{sup V}-ribonucleoside complexes. The Sb{sup V}-purine complexes were more cytotoxic and more effective against Leishmania chagasi than the Sb{sup V}-pyrimidine complexes, supporting the model that the interaction of Sb{sup V} with purine nucleosides may mediate the antileishmanial activity of pentavalent antimonial drugs. (author)

Electric Properties of Pb(Sb1/2Nb1/2)O3 PbTiO3 PbZrO3 Ceramics

Science.gov (United States)

Kawamura, Yasushi; Ohuchi, Hiromu

1994-09-01

Solid-solution ceramics of ternary system xPb(Sb1/2Nb1/2)O3 yPbTiO3 zPbZrO3 were prepared by the solid-state reaction of powder materials. Ceramic, electric, dielectric and piezoelectric properties and crystal structures of the system were studied. Sintering of the system xPb(Sb1/2Nb1/2)O3 yPbTiO3 zPbZrO3 is much easier than that of each end composition, and well-sintered high-density ceramics were obtained for the compositions near the morphotropic transformation. Piezoelectric ceramics with high relative dielectric constants, high radial coupling coefficient and low resonant resistance were obtained for the composition near the morphotropic transformation. The composition Pb(Sb1/2Nb1/2)0.075Ti0.45Zr0.475O3 showed the highest dielectric constant (ɛr=1690), and the composition Pb(Sb1/2Nb1/2)0.05Ti0.45Zr0.5O3 showed the highest radial coupling coefficient (kp=64%).

Evolution of Thermoelectric Properties of Zn4Sb3 Prepared by Mechanical Alloying and Different Consolidation Routes

Directory of Open Access Journals (Sweden)

Pee-Yew Lee

2018-05-01

Full Text Available In this research, a method combining the mechanical alloying with the vacuum sintering or hot pressing was adopted to obtain the compact of β-Zn4Sb3. Pure zinc and antimony powders were used as the starting material for mechanical alloying. These powders were mixed in the stoichiometry ratio of 4 to 3, or more Zn-rich. Single phase Zn4Sb3 was produced using a nominally 0.6 at. % Zn rich powder. Thermoelectric Zn4Sb3 bulk specimens have been fabricated by vacuum sintering or hot pressing of mechanically alloyed powders at various temperatures from 373 to 673 K. For the bulk specimens sintering at high temperature, phase transformation of β-Zn4Sb3 to ZnSb and Sb was observed due to Zn vaporization. However, single-phase Zn4Sb3 bulk specimens with 97.87% of theoretical density were successfully produced by vacuum hot pressing at 473 K. Electric resistivity, Seebeck coefficient, and thermal conductivity were evaluated for the hot pressed specimens from room temperature to 673 K. The results indicate that the Zn4Sb3 shows an intrinsic p-type behavior. The increase of Zn4Sb3 phase ratio can increase Seebeck coefficient but decrease electric conductivity. The maximum power factor and figure of merit (ZT value were 1.31 × 10−3 W/mK2 and 0.81 at 600 K, respectively. The ZT value was lower than that reported in the available data for materials prepared by conventional melt growth and hot pressed methods, but higher than the samples fabricated by vacuum melting and heat treatment techniques.

Synthesis, crystal structure, and magnetic properties of novel 2D kagome materials RE{sub 3}Sb{sub 3}Mg{sub 2}O{sub 14} (RE = La, Pr, Sm, Eu, Tb, Ho): Comparison to RE{sub 3}Sb{sub 3}Zn{sub 2}O{sub 14} family

Energy Technology Data Exchange (ETDEWEB)

Sanders, M.B.; Baroudi, K.M.; Krizan, J.W.; Mukadam, O.A.; Cava, R.J. [Department of Chemistry, Princeton University, Princeton, NJ (United States)

2016-10-15

The crystal structures and magnetic properties of RE{sub 3}Sb{sub 3}Mg{sub 2}O{sub 14} (RE = La, Pr, Sm, Eu, Tb, Ho) with a perfect kagome lattice are presented and compared to RE{sub 3}Sb{sub 3}Zn{sub 2}O{sub 14}. Rietveld structure refinements were performed using X-ray diffraction data, indicating that the layered compounds are fully structurally ordered. The compounds crystallize in a rhombohedral supercell of the cubic pyrochlore structure, in the space group R-3m. Magnetic susceptibility measurements show no signs of magnetic ordering above 2 K. The RE{sub 3}Sb{sub 3}Mg{sub 2}O{sub 14} family is similar to that of RE{sub 3}Sb{sub 3}Zn{sub 2}O{sub 14}; however, the series reported here features a fully ordered distribution of cations in both the nonmagnetic antimony and magnetic rare earth kagome lattices. Unlike the offsite disorder that Zn{sup 2+} experiences in RE{sub 3}Sb{sub 3}Zn{sub 2}O{sub 14}, the magnesium sites in RE{sub 3}Sb{sub 3}Mg{sub 2}O{sub 14} are completely ordered. Here we compare the magnetic properties in both series of kagome compounds to determine how significant Zn{sup 2+}'s positional ordering is within this structure type. The compounds reported here appear to be relatively defect-free and are therefore model systems for investigating magnetic frustration on an ideal 2D rare earth kagome lattice. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Zeta potential study of Sb2S3 nanoparticles synthesized by a facile polyol method in various surfactants

Science.gov (United States)

Saxena, Monika; Okram, Gunadhor Singh

2018-05-01

In the present work, we report the successful synthesis of stibnite Sb2S3 nanoparticles (NPs) by a facile polyol method using various surfactant. The structural and optical properties were investigated by X-ray diffraction (XRD), Raman spectroscopy and Zeta potential. Rietveld refinement of XRD data confirms the single phase orthorhombic crystal structure of stibnite Sb2S3. Presence of six obvious Raman modes further confirmed their stoichiometric formation. Effect of different surfactants on the surface charge of Sb2S3 NPs was studied using Zeta potential measurement in deionized water at different pH values. They reveal that these NPs are more stable when it was synthesized in presence of EDTA than that of CTAB or without surfactant samples with high zeta potential. The isoelectronic point was found at pH = 6.4 for pure sample, 3.5 and 7.2 for CTAB and not found for EDTA Sb2S3 samples. This information can be useful for many industrial applications like pharmaceuticals, ceramics, waste water treatment and medicines.

Synthesis and thermoelectric properties of Sb{sub 0.20}CoSb{sub 2.80} skutterudite

Energy Technology Data Exchange (ETDEWEB)

Figueirêdo, C.A., E-mail: camila_fig@hotmail.com [Universidade Federal do Rio Grande do Sul, PGCIMAT, Instituto de Física, 91501-970 Porto Alegre, RS (Brazil); Gallas, M.R. [Universidade Federal do Rio Grande do Sul, PGCIMAT, Instituto de Física, 91501-970 Porto Alegre, RS (Brazil); Institute for Multiscale Simulations, Friedrich-Alexander-Universität, Nägelsbachstrasse 49b, 91052 Erlangen (Germany); Zorzi, J.E. [Universidade de Caxias do Sul, Instituto de Materiais Cerâmicos, 95765-000 Bom Princípio, RS (Brazil); Perottoni, C.A. [Universidade Federal do Rio Grande do Sul, PGCIMAT, Instituto de Física, 91501-970 Porto Alegre, RS (Brazil); Universidade de Caxias do Sul, Instituto de Materiais Cerâmicos, 95765-000 Bom Princípio, RS (Brazil)

2014-06-15

Highlights: • A HP-HT Sb{sub 0.20}CoSb{sub 2.80} phase was prepared by processing cobalt antimonide at 7.7 GPa and 550 °C, for (at least) 5 min. • The mechanism of formation of this phase involves (i) decomposition of cobalt antimonide into CoSb{sub 2} and Sb, and (ii) insertion of Sb into the remaining cobalt antimonide. • The mechanism of formation is qualitatively different from that responsible for the formation of the high pressure (greater than 20 GPa) phase. - Abstract: Polycrystalline samples of cobalt antimonide (CoSb{sub 2.79}) were submitted to different conditions of pressure, temperature and processing time, in a high-pressure toroidal-type chamber, aiming to maximize the production of the high pressure phase previously observed in experiments with a diamond anvil cell. Rietveld refinements of X-ray powder diffraction data were performed to determine the phase composition and structural parameters. The maximum yield, 89(2) wt.% of Sb{sub x}CoSb{sub 3−x} phase, was obtained at 7.7 GPa, 550 °C and (at least) 5 min of processing time. The mechanism behind the formation of Sb{sub x}CoSb{sub 3−x} at high pressure and high temperature is actually not the same as that previously inferred from experiments at higher pressures (20 GPa) and room temperature with the diamond anvil cell. Indeed, evidences suggest that, at high pressure and high temperature, Sb{sub x}CoSb{sub 3−x} is formed by insertion of Sb resulting from decomposition of cobalt antimonide. Thermal conductivity, Seebeck coefficient and electrical conductivity were estimated for CoSb{sub 2.79} and Sb{sub 0.20}CoSb{sub 2.80}. The thermoelectric figure of merit at room temperature for Sb{sub 0.20}CoSb{sub 2.80} resulted 33% greater than that for CoSb{sub 2.79}.

Study on anisotropy of n-type Mg3Sb2-based thermoelectric materials

Science.gov (United States)

Song, Shaowei; Mao, Jun; Shuai, Jing; Zhu, Hangtian; Ren, Zhensong; Saparamadu, Udara; Tang, Zhongjia; Wang, Bo; Ren, Zhifeng

2018-02-01

The recent discovery of a high thermoelectric figure of merit (ZT) in an n-type Mg3Sb2-based Zintl phase triggered an intense research effort to pursue even higher ZT. Based on our previous report on Mg3.1Nb0.1Sb1.5Bi0.49Te0.01, we report here that partial texturing in the (001) plane is achieved by double hot pressing, which is further confirmed by the rocking curves of the (002) plane. The textured samples of Mg3.1Nb0.1Sb1.5Bi0.49Te0.01 show a much better average performance in the (00l) plane. Hall mobility is significantly improved to ˜105 cm2 V-1 s-1 at room temperature in the (00l) plane due to texturing, resulting in higher electrical conductivity, a higher power factor of ˜18 μW cm-1 K-2 at room temperature, and also higher average ZT. This work shows that texturing is good for higher thermoelectric performance, suggesting that single crystals of n-type Mg3Sb2-based Zintl compounds are worth pursuing.

AC plasma induced modifications in Sb{sub 2}S{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Calixto-Rodriguez, M; Martinez, H [Instituto de Ciencias Fisicas, Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico); Castillo, F [Instituto de Ciencias Nucleares, Universidad Nacional Autonoma de Mexico, Apartado Postal 70-543, 04510, Mexico D. F. (Mexico); Pena, Y [Universidad Autonoma de Nuevo Leon, Facultad de Ciencias Quimicas, Pedro de Alba s/n, Cd. Universitaria, San Nicolas de los Garza, N.L (Mexico); Sanchez-Juarez, A, E-mail: ciro@nucleares.unam.m [Centro de Investigacion en EnergIa, Universidad Nacional Autonoma de Mexico, Privada Xochicalco s/n Col. Centro, Temixco, Morelos, C.P. 62580 (Mexico)

2010-01-01

Sb{sub 2}S{sub 3} thin films, deposited by the chemical bath deposition method, were treated with N{sub 2} plasma at 3.0 Torr during several minutes. The as-prepared Sb{sub 2}S{sub 3} thin films and films treated with N{sub 2} plasma have been characterized using several techniques. X-ray diffraction studies have shown that plasma treatment induced recrystallization on the as-prepared Sb{sub 2}S{sub 3}thin films. The band gap values decreased from 2.37 to 1.82 eV after plasma treatment, and the electrical conductivity increased from 10{sup 9} to 10{sup 7} ({Omega}cm){sup -1} due to the annealing effect.

The determination of nitrogen dioxide in ambient air with free hanging filters as passive samplers, and a new calibration method using fritted bubblers.

Science.gov (United States)

Heeres, Paul; Setiawan, Rineksa; Krol, Maarten Cornelis; Adema, Eduard Hilbrand

2009-12-01

This paper describes two new methods for the determination of NO(2) in the ambient air. The first method consists of free hanging filters with a diameter of 2.5 cm as passive samplers. The filters are impregnated with triethanolamine to bind NO(2). With standard colorimetrical analysis, the amount of NO(2) on the filters is determined. The second method is performed with fritted bubblers filled with Saltzman reagent, where, with a special procedure the absorption efficiencies of the bubblers are determined using ambient air, without the use of standard gases and electronic analytical instruments. The results of the bubblers are used to calibrate the free hanging filters. The two methods were applied simultaneously in the city of Yogyakarta, Indonesia. The methods are inexpensive and very well suited for use in low-budget situations. A characteristic of the free filter is the Sampling Volume, SV. This is the ratio of the amount of NO(2) on the filter and the ambient concentration. With the filter used in this study, the amount of triethanolamine and exposure time, the SV is 0.0166 m(3). The sampling rate (SR) of the filter, 4.6 cm(3)/s, is high. Hourly averaged measurements are performed for 15 hours per day in four busy streets. The measured amounts of NO(2) on the filters varied between 0.57 and 2.02 microg NO(2), at ambient air concentrations of 32 to 141 microg/m(3) NO(2). During the experiments the wind velocity was between 0.2 and 2.0 m/s, the relative humidity between 24 and 83 % and the temperature between 295 K and 311 K. These variations in weather conditions have no influence on the uptake of NO(2).

IFSA: a microfluidic chip-platform for frit-based immunoassay protocols

Science.gov (United States)

Hlawatsch, Nadine; Bangert, Michael; Miethe, Peter; Becker, Holger; Gärtner, Claudia

2013-03-01

Point-of-care diagnostics (POC) is one of the key application fields for lab-on-a-chip devices. While in recent years much of the work has concentrated on integrating complex molecular diagnostic assays onto a microfluidic device, there is a need to also put comparatively simple immunoassay-type protocols on a microfluidic platform. In this paper, we present the development of a microfluidic cartridge using an immunofiltration approach. In this method, the sandwich immunoassay takes place in a porous frit on which the antibodies have immobilized. The device is designed to be able to handle three samples in parallel and up to four analytical targets per sample. In order to meet the critical cost targets for the diagnostic market, the microfluidic chip has been designed and manufactured using high-volume manufacturing technologies in mind. Validation experiments show comparable sensitivities in comparison with conventional immunofiltration kits.

Mass transport in Ti0.5Sb2Te3 phase-change nanobridge

International Nuclear Information System (INIS)

Ji, Xinglong; Wu, Liangcai; Lv, Shilong; Rao, Feng; Zhu, Min; Song, Zhitang; Zhou, Xilin; Feng, Songlin

2014-01-01

Investigation of atomic migration behavior in nanoscale phase-change material is very valuable for phase-change memory applications. In this work, Ti 0.5 Sb 2 Te 3 -based phase-change nanobridges were fabricated and mass transport by atomic migration was studied. A 3-D finite-element simulation on the electrothermal field was introduced to describe the electrothermal environment in the phase-change region. During the nanosecond operation, an obvious compositional distribution resulting from atomic migration was observed in the Ti 0.5 Sb 2 Te 3 phase-change nanobridge. Based on the mass continuity equation, a physical model for mass transport is proposed to illustrate that the density variation during the amorphous-to-crystalline structural transformation is the main reason for the atomic migration in nanoscale Ti 0.5 Sb 2 Te 3 phase-change material

Structural, optical and photoacoustic study of Sb{sub 2}Te{sub 3} prepared by mechanical alloying

Energy Technology Data Exchange (ETDEWEB)

Souza, S.M.; Triches, D.M. [Departamento de Engenharia Mecanica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, S/N, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Lima, J.C. de, E-mail: fsc1jcd@fisica.ufsc.b [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, S/N, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Grandi, T.A. [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, S/N, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Biasi, R.S. de [Secao de Engenharia Mecanica e de Materiais, Instituto Militar de Engenharia, 22290-270 Rio de Janeiro, RJ (Brazil)

2010-07-01

Nanostructured Sb{sub 2}Te{sub 3} was produced from Sb and Te by mechanical alloying for 3 h. Volume fractions of crystalline and interfacial components of the milled powder were estimated from the X-ray diffraction (XRD) pattern corrected for polarization, re-absorption, and inelastic scattering and converted to electron units using the theoretical value of the mean square scattering factor of Sb{sub 2}Te{sub 3}. Annealing showed that the particles are stable up to at least 583 K. The influence of the interfacial component on optical and thermal properties of as-milled and annealed Sb{sub 2}Te{sub 3} was studied through Raman and photoacoustic absorption measurements. The contribution of the interfacial component to the thermal diffusivity of milled Sb{sub 2}Te{sub 3} was investigated assuming that the measured thermal diffusivity can be described as a random mixture of crystalline and interfacial components. The large volume fraction of interfacial component in the milled powder seems to be responsible for a significant increase in thermal diffusivity. After annealing at 583 K the value of thermal diffusivity is much smaller, close to the one reported for bulk Sb{sub 2}Te{sub 3}.

High thermoelectric properties of (Sb, Bi)2Te3 nanowire arrays by tilt-structure engineering

Science.gov (United States)

Tan, Ming; Hao, Yanming; Deng, Yuan; Chen, Jingyi

2018-06-01

In this paper, we present an innovative tilt-structure design concept for (Sb, Bi)2Te3 nanowire array assembled by high-quality nanowires with well oriented growth, utilizing a simple vacuum thermal evaporation technique. The unusual tilt-structure (Sb, Bi)2Te3 nanowire array with a tilted angle of 45° exhibits a high thermoelectric dimensionless figure-of-merit ZT = 1.72 at room temperature. The relatively high ZT value in contrast to that of previously reported (Sb, Bi)2Te3 materials and the vertical (Sb, Bi)2Te3 nanowire arrays evidently reveals the crucial role of the unique tilt-structure in favorably influencing carrier and phonon transport properties, resulting in a significantly improved ZT value. The transport mechanism of such tilt-structure is proposed and investigated. This method opens a new approach to optimize nano-structure in thin films for next-generation thermoelectric materials and devices.

Comparisons of TRAC-PF-1 calculations with semiscale Mod-3 small-break tests S-SB-P1 and S-SB-P7

International Nuclear Information System (INIS)

Sahota, M.S.

1982-01-01

Semiscale Tests S-SB-P1 and S-SB-P7 conducted in the Semiscale Mod-3 facility at the Idaho National Engineering Laboratory are analyzed using the latest released version of the Transient Reactor Analysis Code (TRAC-PF1). The results are used to assess TRAC-PF1 predictions of thermal-hydraulic phenomena and the effects of break size and pump operation on system response during slow transients. Tests S-SB-P1 and S-SB-P7 simulated an equivalent pressurized-water-reactor (PWR) 2.5% communicative cold-leg break for early and late pump trips, respectively, with only high-pressure injection (HPI) into the cold legs. The parameters examined include break flow, primary-system pressure response, primary-system mass distribution, and core characteristics

Selective adsorption of volatile hydrocarbons and gases in high surface area chalcogels containing [ES3]3- anions (E = As, Sb)

KAUST Repository

Ahmed, Ejaz; Khanderi, Jayaprakash; Anjum, Dalaver H.; Rothenberger, Alexander

2014-01-01

We describe the sol-gel synthesis of the two new chalcogels KFeSbS3 and NaFeAsS3, which demonstrate excellent adsorption selectivity for volatile hydrocarbons and gases. These predominantly mesoporous materials have been synthesized by reacting Fe(OAc)2 with K3SbS3 or Na3AsS3 in a formamide/water mixture at room temperature. Aerogels obtained after supercritical drying have BET surface areas of 636 m2/g and 505 m2/g for KFeSbS3 and NaFeAsS3, respectively, with pore sizes in the micro- (below 2 nm), meso- (2-50 nm), and macro- (above 50 nm) regions.

Selective adsorption of volatile hydrocarbons and gases in high surface area chalcogels containing [ES3]3- anions (E = As, Sb)

KAUST Repository

Ahmed, Ejaz

2014-11-25

We describe the sol-gel synthesis of the two new chalcogels KFeSbS3 and NaFeAsS3, which demonstrate excellent adsorption selectivity for volatile hydrocarbons and gases. These predominantly mesoporous materials have been synthesized by reacting Fe(OAc)2 with K3SbS3 or Na3AsS3 in a formamide/water mixture at room temperature. Aerogels obtained after supercritical drying have BET surface areas of 636 m2/g and 505 m2/g for KFeSbS3 and NaFeAsS3, respectively, with pore sizes in the micro- (below 2 nm), meso- (2-50 nm), and macro- (above 50 nm) regions.

Formation of high-conductivity regions in SnO2-AOx (A - Ti4+, Zr4+, Sb3+, Sb5+) films exposed to ultraviolet radiation of H2

International Nuclear Information System (INIS)

Postovalova, G.G.; Roginskaya, Yu.E.; Zav'yalov, S.A.; Galyamov, B.Sh.; Klimasenko, N.L.

2000-01-01

Composition, structure and electron properties of SnO 2 films doped by Ti, Zr and Sb oxides were studied. The doped SnO 2 films were determined to contain nano-regions of SnO 2 base crystalline solid solutions and amorphous SnO 2 containing Sn 2+ or Sb 3+ ions and residing at the surface of crystallites or between them. These composition and structure peculiarities affect essentially both electron structure and electrical properties of films. Localized 5s-states of the conductivity range diffused boundary of amorphous SnO 2 partially filled with 5s-electrons of Sn 2+ or Sb 3+ ions serving as traps capture free electrons in the crystalline ranges and motivate high resistance of films [ru

AgSbSe2 and AgSb(S,Se)2 thin films for photovoltaic applications

International Nuclear Information System (INIS)

Garza, J.G.; Shaji, S.; Rodriguez, A.C.; Das Roy, T.K.; Krishnan, B.

2011-01-01

Silver antimony selenide (AgSbSe 2 ) thin films were prepared by heating sequentially deposited multilayers of antimony sulphide (Sb 2 S 3 ), silver selenide (Ag 2 Se), selenium (Se) and silver (Ag). Sb 2 S 3 thin film was prepared from a chemical bath containing SbCl 3 and Na 2 S 2 O 3 , Ag 2 Se from a solution containing AgNO 3 and Na 2 SeSO 3 and Se thin films from an acidified solution of Na 2 SeSO 3 , at room temperature on glass substrates. Ag thin film was deposited by thermal evaporation. The annealing temperature was 350 deg. C in vacuum (10 -3 Torr) for 1 h. X-ray diffraction analysis showed that the thin films formed were polycrystalline AgSbSe 2 or AgSb(S,Se) 2 depending on selenium content in the precursor films. Morphology and elemental analysis of these films were done using scanning electron microscopy and energy dispersive X-ray spectroscopy. Optical band gap was evaluated from the UV-visible absorption spectra of these films. Electrical characterizations were done using Hall effect and photocurrent measurements. A photovoltaic structure: glass/ITO/CdS/AgSbSe 2 /Al was formed, in which CdS was deposited by chemical bath deposition. J-V characteristics of this structure showed V oc = 435 mV and J sc = 0.08 mA/cm 2 under illumination using a tungsten halogen lamp. Preparation of a photovoltaic structure using AgSbSe 2 as an absorber material by a non-toxic selenization process is achieved.

SOX9 regulates microRNA miR-202-5p/3p expression during mouse testis differentiation

DEFF Research Database (Denmark)

Wainwright, Elanor N; Jorgensen, Joan S; Kim, Youngha

2013-01-01

MicroRNAs are important regulators of developmental gene expression, but their contribution to fetal gonad development is not well understood. We have identified the evolutionarily conserved gonadal microRNAs miR-202-5p and miR-202-3p as having a potential role in regulating mouse embryonic gonad....... Expression of the primary transcript of miR-202-5p/3p remained low in XY gonads in a conditional Sox9-null mouse model, suggesting that pri-miR-202 transcription is downstream of SOX9, a transcription factor that is both necessary and sufficient for male sex determination. We identified the pri-miR-202...

Structural and Electronic Features of Sb-Based Electrode Materials: 121Sb Moessbauer Spectrometry

International Nuclear Information System (INIS)

Ionica, C. M.; Aldon, L.; Lippens, P. E.; Morato, F.; Olivier-Fourcade, J.; Jumas, J.-C.

2004-01-01

Lithium insertion mechanisms in two antimony based compounds: CoSb 3 and CoSb have been studied by means of 121 Sb Moessbauer spectrometry. Structural and electronic modifications induced by insertion of lithium have been characterised for different depths of discharge. In all cases the insertion mechanisms can be described from several steps. In the first step antimony is partially dispersed in the metallic matrix with amorphisation of the electrode material and in a second step we can observe the alloy forming (Li 3 Sb). However this amorphous alloy remains in interaction with the matrix allowing then a good reversibility.

Sequential and simultaneous adsorption of Sb(III) and Sb(V) on ferrihydrite: Implications for oxidation and competition.

Science.gov (United States)

Qi, Pengfei; Pichler, Thomas

2016-02-01

Antimony (Sb) is a naturally occurring element of growing environmental concern whose toxicity, adsorption behavior and other chemical properties are similar to that of arsenic (As). However, less is known about Sb compared to As. Individual and simultaneous adsorption experiments with Sb(III) and Sb(V) were conducted in batch mode with focus on the Sb speciation of the remaining liquid phase during individual Sb(III) adsorption experiments. The simultaneous adsorption and oxidation of Sb(III) was confirmed by the appearance of Sb(V) in the solution at varying Fe/Sb ratios (500, 100 and 8) and varying pH values (3.8, 7 and 9). This newly formed Sb(V) was subsequently removed from solution at a Fe/Sb ratio of 500 or at a pH of 3.8. However, more or less only Sb(V) was observed in the liquid phase at the end of the experiments at lower Fe/Sb ratios and higher pH, indicating that competition took place between the newly formed Sb(V) and Sb(III), and that Sb(III) outcompeted Sb(V). This was independently confirmed by simultaneous adsorption experiments of Sb(III) and Sb(V) in binary systems. Under such conditions, the presence of Sb(V) had no influence on the adsorption of Sb(III) while Sb(V) adsorption was significantly inhibited by Sb(III) over a wide pH range (4-10). Thus, in the presence of ferrihydrite and under redox conditions, which allow the presence of both Sb species, Sb(V) should be the dominant species in aquatic environments, since Sb(III) is adsorbed preferentially and at the same time oxidized to Sb(V). Copyright © 2015 Elsevier Ltd. All rights reserved.

Formation Mechanism of Self Assembled Horizontal ErSb Nanowires Embedded in a GaSb(001) Matrix

Science.gov (United States)

Wilson, Nathaniel; Kraemer, Stephan; PalmstrøM, Chris

The ErxGa1-xSb exhibits a variety of self-assembling nanostructures. In order to harness these nanostructures for use in devices and other material systems it is important to understand their formation. We have characterized the growth mechanism of self-assembled horizontal ErSb nanowires in a GaSb(001) matrix through the use of in-situ Scanning Tunneling Microscopy (STM) as well as ex-situ Transmission Electron Microscopy (TEM). We observe large GaSb macrosteps on the growth surface of Er.3Ga.7Sb samples. The areas near the ledge and base of the macrosteps show significant differences in size and distribution of ErSb nanowires. Results suggest that the formation of macrosteps drives the transition from vertical to horizontal nanowires in the ErxGa1-xSb system. We also observe a low temperature growth mode, which results in horizontal nanowire formation under a wide range of flux conditions. This new growth mode does not exhibit the embedded growth observed in the formation of nanowires at higher temperatures and may allow for horizontal nanowire formation without the presence of macrosteps, as well as the formation of smaller nanoparticles which may be useful for achieving smaller nanoparticle dimensions and electron confinement effects. This work was supported by NSF-DMR under 1507875.

Ordered perovskites with cationic vacancies. 7. Structural investigations on Ba/sub 2/Zrsub(3/4)vacantsub(1/4)SbO/sub 6/

Energy Technology Data Exchange (ETDEWEB)

Treiber, U; Kemmler-Sack, S [Tuebingen Univ. (Germany, F.R.). Lehrstuhl fuer Anorganische Chemie 2

1980-11-01

The ochre coloured Ba/sub 2/Zrsub(3/4)vacantsub(1/4)SbO/sub 6/ belongs to the group of oxygen perovskites with an ordered distribution of the vacancies. It crystallizes tetragonal (a = 11.68/sub 5/ A; c = 16.60/sub 6/ A) with 16 formula units in the cell: Ba/sub 32/Zr/sub 12/vacant/sub 4/Sb/sub 16/O/sub 96/. For the space group P 4/mmm intensity calculations on powder data gave a refined, intensity related R' value of 4.8%. In the structure the Zr and Ba atoms are ordered (1:1 order); the four cationic vacancies are located in a face centered arrangement in the zirconium sublattice. The Ba atoms are displaced by approximately 0.20 A in direction of the neighbouring vacancy, while the other cations maintain their ideal positions.

Preclinical and first clinical experience with the gastrin-releasing peptide receptor-antagonist [68Ga]SB3 and PET/CT

International Nuclear Information System (INIS)

Maina, Theodosia; Charalambidis, David; Nock, Berthold A.; Bergsma, Hendrik; Krenning, Eric P.; Kulkarni, Harshad R.; Mueller, Dirk; Baum, Richard P.; Jong, Marion de

2016-01-01

Gastrin-releasing peptide receptors (GRPR) represent attractive targets for tumor diagnosis and therapy because of their overexpression in major human cancers. Internalizing GRPR agonists were initially proposed for prolonged lesion retention, but a shift of paradigm to GRPR antagonists has recently been made. Surprisingly, radioantagonists, such as [ 99m Tc]DB1 ( 99m Tc-N 4 '-DPhe 6 ,Leu-NHEt 13 BBN(6-13)), displayed better pharmacokinetics than radioagonists, in addition to their higher inherent biosafety. We introduce here [ 68 Ga]SB3, a [ 99m Tc]DB1 mimic-carrying, instead of the 99m Tc-binding tetraamine, the chelator DOTA for labeling with the PET radiometal 68 Ga. Competition binding assays of SB3 and [ nat Ga]SB3 were conducted against [ 125 I-Tyr 4 ]BBN in PC-3 cell membranes. Blood samples collected 5 min postinjection (pi) of the [ 67 Ga]SB3 surrogate in mice were analyzed using high-performance liquid chromatography (HPLC) for degradation products. Likewise, biodistribution was performed after injection of [ 67 Ga]SB3 (37 kBq, 100 μL, 10 pmol peptide) in severe combined immunodeficiency (SCID) mice bearing PC-3 xenografts. Eventually, [ 68 Ga]SB3 (283 ± 91 MBq, 23 ± 7 nmol) was injected into 17 patients with breast (8) and prostate (9) cancer. All patients had disseminated disease and had received previous therapies. PET/CT fusion images were acquired 60-115 min pi. SB3 and [ nat Ga]SB3 bound to the human GRPR with high affinity (IC 50 : 4.6 ± 0.5 nM and 1.5 ± 0.3 nM, respectively). [ 67 Ga]SB3 displayed good in vivo stability (>85 % intact at 5 min pi). [ 67 Ga]SB3 showed high, GRPR-specific and prolonged retention in PC-3 xenografts (33.1 ± 3.9%ID/g at 1 h pi - 27.0 ± 0.9%ID/g at 24 h pi), but much faster clearance from the GRPR-rich pancreas (∼160%ID/g at 1 h pi to <17%ID/g at 24 h pi) in mice. In patients, [ 68 Ga]SB3 elicited no adverse effects and clearly visualized cancer lesions. Thus, 4 out of 8 (50 %) breast cancer and 5 out of 9

Hydrazine-hydrothermal syntheses, characterizations and photoelectrochemical properties of two quaternary chalcogenidoantimonates(III) BaCuSbQ{sub 3} (Q = S, Se)

Energy Technology Data Exchange (ETDEWEB)

Liu, Chang; Hou, Peipei [State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Chai, Wenxiang [College of Materials Science and Engineering, China Jiliang University, Hangzhou 310018 (China); Tian, Jiawei; Zheng, Xuerong; Shen, Yaying; Zhi, Mingjia; Zhou, Chunmei [State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Liu, Yi, E-mail: liuyimse@zju.edu.cn [State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

2016-09-15

Two isostructural quaternary chalcogenidoantimonates(III) BaCuSbQ{sub 3} (Q = S, Se): BaCuSbS{sub 3} (1) and BaCuSbSe{sub 3} (2) have been successfully synthesized through a facile hydrazine-hydrothermal method. Both two compounds crystallize in the orthorhombic space group and feature a three-dimensional (3D) channeled [Cu{sub 2}Sb{sub 2}Q{sub 6}]{sup 4-} framework, which is constructed by the distorted tetrahedral CuQ{sub 4} and pyramid SbQ{sub 3} units via vertex sharing. Both optical properties and theoretical studies show 1 and 2 are semiconductors with narrow band gaps. In addition, their photoelectrochemical properties have been investigated. - Highlights: • BaCuSbQ{sub 3} (Q = S, Se) were synthesized through a hydrazine-hydrothermal method. • BaCuSbQ{sub 3} (Q = S, Se) feature a 3D framework by single-crystal X-ray diffraction. • Experimental and theoretical studies confirm BaCuSbQ{sub 3} (Q = S, Se) are semiconductors. • Photoelectrochemical properties of BaCuSbQ{sub 3} (Q = S, Se) have been investigated.

47 CFR 202.3 - Plans preparation and execution.

Science.gov (United States)

2010-10-01

... Emergencies Act (50 U.S.C. 1601). (2) The Director of the Office of Science and Technology Policy shall direct... 202.3 Telecommunication OFFICE OF SCIENCE AND TECHNOLOGY POLICY AND NATIONAL SECURITY COUNCIL NATIONAL... direction of the activities of the NCS. (2) The Director of the Office of Science and Technology Policy...

Photoelectrochemical properties of hierarchical ZnO micro-nanostructure sensitized with Sb2S3 nanoparticles

Directory of Open Access Journals (Sweden)

Zhimin GUO

2016-02-01

Full Text Available By using electrochemical deposition method, and assisted with additions of PEG-400 and EDA, well-aligned ZnO nanorods and hierarchical ZnO micro-nanostructure are fabricated directly on indium doped tin oxide coated conducting glass (ITO substrate. The shell-core Sb2S3/ZnO nanorod structure and the shell-core hierarchical Sb2S3/ZnO micro-nanostructure are prepared by chemical bath deposition method. SEM, XRD, UV-Vis and photocurrent test are used to characterize the morphology, nanostructures and their photoelectrochemical properties. The studies show that the photocurrent on the array membranes with shell-core hierarchical Sb2S3/ZnO micro-nanostructure is apparently higher than that with shell-core Sb2S3/ZnO nanorods array.

Sb2Te3 crystal a potential absorber material for broadband photodetector: A first-principles study

Directory of Open Access Journals (Sweden)

Abdullahi Lawal

Full Text Available Antimony telluride (Sb2Te3, a layered semiconductor material, is considered a promising absorbing material for a high-performance optoelectronic device within broadband wavelengths because of remarkable features like strong optical absorbance and the narrow direct band gap. In this work, based on the first-principles approach, we investigate in detail the structural, electronic and optical properties of the hexagonal Sb2Te3 compound. The structural and electronic properties were computed using the first-principles approach, treating exchange–correlation potential with generalized gradient approximation (GGA within density functional theory (DFT. Furthermore, for accurate prediction of the band gap, we go beyond DFT and calculated band structure using GW correction. The optical properties, namely, imaginary and real parts of complex dielectric function, absorption coefficient, refractive index, reflectivity, extinction coefficient, electron energy loss function and optical conductivity are performed by quasi-particle many-body perturbation theory (MBPT via Bethe-Salpeter equation (BSE. The computed structural parameters are in good agreement with available experimental data. The obtained quasi-particle (GW correction band structure show the semiconducting character of Sb2Te3 material with a direct band gap Eg of 0.221 eV, in agreement with previously reported value (Eg = 0.210 eV while the projected density of states indicates (PDOS that the p-orbital of Sb and Te atoms are responsible for material properties near the Fermi level. To our knowledge, our first reported calculations of optical properties, with the inclusion of electron-hole effects are consistent with available experimental measurements. Consistencies of our findings with experimental data validate the effectiveness of electron-hole interaction for theoretical investigation of optical properties. Keywords: DFT, Quasi-particle many-body perturbation theory, Bethe

Discovery of highly spin-polarized conducting surface states in the strong spin-orbit coupling semiconductor Sb2Se3

Science.gov (United States)

Das, Shekhar; Sirohi, Anshu; Kumar Gupta, Gaurav; Kamboj, Suman; Vasdev, Aastha; Gayen, Sirshendu; Guptasarma, Prasenjit; Das, Tanmoy; Sheet, Goutam

2018-06-01

Majority of the A2B3 -type chalcogenide systems with strong spin-orbit coupling (SOC), such as Bi2Se3,Bi2Te3 , and Sb2Te3 , etc., are topological insulators. One important exception is Sb2Se3 where a topological nontrivial phase was argued to be possible under ambient conditions, but such a phase could be detected to exist only under pressure. In this paper, we show that Sb2Se3 like Bi2Se3 displays a generation of highly spin-polarized current under mesoscopic superconducting point contacts as measured by point-contact Andreev reflection spectroscopy. In addition, we observe a large negative and anisotropic magnetoresistance of the mesoscopic metallic point contacts formed on Sb2Se3 . Our band-structure calculations confirm the trivial nature of Sb2Se3 crystals and reveal two trivial surface states one of which shows large spin splitting due to Rashba-type SOC. The observed high spin polarization and related phenomena in Sb2Se3 can be attributed to this spin splitting.

Thermal conductivity of Zn{sub 4{minus}x}Cd{sub x}Sb{sub 3} solid solutions

Energy Technology Data Exchange (ETDEWEB)

Caillat, T; Borshchevsky, A; Fleurial, J P

1997-07-01

{beta}-Zn{sub 4}Sb{sub 3} was recently identified at the Jet Propulsion Laboratory as a new high performance p-type thermoelectric material with a maximum dimensionless thermoelectric figure of merit ZT of 1.4 at a temperature of 673K. A usual approach, used for many state-of-the-art thermoelectric materials, to further improve ZT values is to alloy {beta}-Zn{sub 4}Sb{sub 3} with isostructural compounds because of the expected decrease in lattice thermal conductivity. The authors have grown Zn{sub 4{minus}x}Cd{sub x}Sb{sub 3} crystals with 0.2 {le} x < 1.2 and measured their thermal conductivity from 10 to 500K. The thermal conductivity values of Zn{sub 4{minus}x}Cd{sub x}Sb{sub 3} alloys are significantly lower than those measured for {beta}-Zn{sub 4}Sb{sub 3} and are comparable to its calculated minimum thermal conductivity. A strong atomic disorder is believed to be primarily at the origin of the very low thermal conductivity of these materials which are also fairly good electrical conductors and are therefore excellent candidates for thermoelectric applications.

Oblate shapes of 200,202,204Hg

International Nuclear Information System (INIS)

Bockisch, A.; Bharuth-Ram, K.; Kleinfeld, A.M.; Lieb, K.P.

1979-01-01

Measurements of the reorientation effect for the first excited 2 + states in 200 , 202 , 204 Hg were performed by exploiting the dependence of the γ-ray yield on Q 2 + for different projectiles. For 200 Hg, a positive quadrupole moment of Q 2 = 0.96 +- 0.11 eb (for negative interference) or Q 2 = 1.11 +- 0.11 eb (for positive interference) was determined indicating an oblate shape. Small positive Q 2 values were also found for 202 Hg and 204 Hg. Nine B(E2) values for excitation of the 2 + , 2 + ' and 4 + states in 196-204 Hg were measured. (orig.) [de

Kinetic modeling of 11C-SB207145 binding to 5-HT4 receptors in the human brain in vivo

DEFF Research Database (Denmark)

Marner, Lisbeth; Gillings, Nic; Comley, Robert A

2009-01-01

The serotonin 4 receptor (5-HT(4) receptor) is known to be involved in learning and memory. We evaluated for the first time the quantification of a novel 5-HT(4) receptor radioligand, (11)C-SB207145, for in vivo brain imaging with PET in humans. METHODS: For evaluation of reproducibility, 6...

Preparation and oxidation resistance of single crystalline β-Zn{sub 4}Sb{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Liu, Hong-xia; Deng, Shu-ping [Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan Normal University, Kunming 650500 (China); Li, De-cong [Photoelectric Engineering College, Yunnan Open University, Kunming 650500 (China); Shen, Lan-xian; Cheng, Feng; Wang, Jin-song [Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan Normal University, Kunming 650500 (China); Deng, Shu-kang, E-mail: skdeng@126.com [Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan Normal University, Kunming 650500 (China)

2016-11-01

This study prepared a Zn-rich single crystal β-Zn{sub 4}Sb{sub 3} using a Sn flux method based on the stoichiometric ratios of Zn{sub 4.4}Sb{sub 3}Sn{sub 3}. The oxidation resistance of the sample was determined by exploring the effects of heat treatment in air on electrical transport properties and thermal stability, which is of practical importance in the application of the material at high temperatures. Results showed that the prepared sample possessed high electrical transport properties, with a high power factor of 1.67×10{sup −3} W m{sup −1} K{sup −2} at 563 K. The heat treatment in air weakened the electrical conductivity of the single crystalline β-Zn{sub 4}Sb{sub 3}, whereas the Seebeck coefficients were rarely independent of the annealing condition. Eventually, the power factor obtained after the first heating at 523 K for 4 h became comparable to that of the as-prepared sample, although it decreased after the second heating at 573 K for 5 h. Nevertheless, the single crystalline β-Zn{sub 4}Sb{sub 3} still possessed a good thermal stability after the heat treatment process.

Area 3 Support Buildings (A3SB) H5-0992, H5-0996 PRL 218 Confirmatory Sampling Report

Science.gov (United States)

Mrdjenovich, Timothy

2015-01-01

The Area 3 Support Buildings site (A3SB) consists of two separate areas located on the north side of Beach Road in the northern portion of Kennedy Space Center, Florida (KSC), outside the secured perimeter of KSC. The A3SB areas are approximately 0.6 miles apart, and were developed as Shiffler's Grocery Store and Service Station (west site) and as a residence (east site) prior to acquisition by the National Aeronautics and Space Administration (NASA) in 1963. Both areas were used by the Bendix Company in support of NASA as chemical laboratories from 1963 through 1969. Both of the buildings were demolished by 1987. The west portion of the site was used by the US Fish & Wildlife Service (F&W) in support of the Merritt Island National Wildlife Refuge (MINWR) for parking at the entrance to the Hammock Trails from 1969 to the present. The east portion of the site was used for intermittent suspect materials staging in the early 1990s and is still used as an apiary location, but is otherwise no longer active. In support of the NASA HSWA permit requirements, this site was identified as Potential Release Location (PRL) 218 and a Solid Waste Management Unit (SWMU) Assessment (SA) was conducted in 2013. Confirmatory Sampling (CS) was recommended and approved by the KSC Remediation Team (KSCRT). Three locations of concern (LOCs) were identified and sampled at the site. The LOCs include two former chemical labs and a former suspect staging area. The CS was conducted in March of 2015 at three locations by means of Direct Push Technology (DPT) groundwater sampling and at one location for soil sampling. The samples were collected and analyzed in accordance with the approved CS Work Plan. There were no exceedances of criteria detected in any of the samples from the three LOCs. The results of this investigation indicate that past and/or present operations have not negatively impacted environmental media at the A3SB. Based upon no confirmed groundwater detections above GCTLs and no

Simultaneous speciation and preservation of aqueous As, Sb and Se redox couples

Science.gov (United States)

Wu, D.; Pichler, T.

2014-12-01

We developed a new method for the simultaneous speciation analysis of inorganic arsenic (III, V), antimony (III, V) and selenium (IV, VI) in water samples via double-focusing sector field-inductively coupled plasma-mass spectrometry (SF-ICP-MS) coupled to high performance liquid chromatography (HPLC). A Hamilton PRX-X100 anion exchange column with EDTA (pH of 4.7) and 3% methanol as mobile phase was used for species separation. The flow rate was set to 1.5 mL min-1 and a solvent gradient (linear ramp from 5 mM to 30 mM) was applied. The overall analysis time for all six desired species was 11 minutes. The detection limits for As(III), As(V), Sb(III), Sb(V), Se(VI) and Se(IV) were 0.02 μg L-1, 0.06 μg L-1, 0.2 μg L-1, 0.02 μg L-1, 0.2 μg L-1 and 0.4 μg L-1 respectively. The retention times for As(III), As(V), Sb(III), Sb(V), Se(IV) and Se(VI) were 1.70, 2.94, 7.14, 2.28, 3.38 and 9.36 min, respectively. Subsequently, the stability of inorganic As(III, V), Sb(III, V) and Se(IV, VI) species in different water samples (groundwater, lake water and river water) was studied over a time scale of 11 weeks. High concentrations of Fe (25.0 mg/L) and Mn (25.0 mg/L) were added to different matrices to simulate Fe and Mn rich environments. All samples were spiked with 5.0 μg/L As(III, V) and Sb(III, V) and 15.0 μg/L Se(IV, VI).. We investigated several strategies for species preservation, i.e., EDTA only, EDTA combined with acidification (HCl, HNO3, formic acid and acetic acid). The preserved samples were stored at 4 °C in the dark. For comparison, another subsample without any preservation was stored at room temperature in the presence of light. The results showed that a combination EDTA acidified to pH of 3 can be used to preserve all species for at least 11 weeks. While EDTA only (pH = 6) failed to preserve As and Sb species, although Se species were preserved.

Dissimilatory Sb(V) reduction by microorganisms isolated from Sb-contaminated sediment

Science.gov (United States)

Dovick, M. A.; Kulp, T. R.

2013-12-01

Mining and smelting are major sources of trace metal contamination in freshwater systems. Arsenic (As) is a common contaminant derived from certain mining operations and is a known toxic metalloid and carcinogen. Antimony (Sb) is listed as a pollutant of priority interest by the EPA and is presumed to share similar geochemical and toxicological properties with arsenic. Both elements can occur in four different oxidation states (V, III, 0, and -III) under naturally occurring conditions. In aqueous solutions As(V) and Sb(V) predominate in oxygenated surface waters whereas As(III) and Sb(III) are stable in anoxic settings. Numerous studies have examined microbiological redox pathways that utilize As(V) as a terminal electron acceptor for anaerobic respiration, however there have been few studies on microbial mechanisms that may affect the biogeochemical cycling of Sb in the environment. Here we report bacterial reduction of Sb(V) to Sb(III) in anoxic enrichment cultures and bacterial isolates grown from sediment collected from an Sb contaminated pond at a mine tailings site in Idaho (total pond water Sb concentration = 235.2 +/- 136.3 ug/L). Anaerobic sediment microcosms (40 mL) were established in artificial freshwater mineral salt medium, amended with millimolar concentrations of Sb(V), acetate or lactate, and incubated at 27°C for several days. Antimony(V), lactate, and acetate concentrations were monitored during incubation by High Performance Liquid Chromatography (HPLC) and Ion Chromatography (IC). Live sediment microcosms reduced millimolar amendments of Sb(V) to Sb(III) coupled to the oxidation of acetate and lactate, while no activity occurred in killed controls. Enrichment cultures were established by serially diluting Sb(V)-reducing microcosms in mineral salt medium with Sb(V) and acetate, and a Sb(V)-reducing bacterial strain was isolated by plating on anaerobic agar plates amended with millimolar Sb(V) and acetate. Direct cell counting demonstrated that

Colligative thermoelectric transport properties in n-type filled CoSb{sub 3} determined by guest electrons in a host lattice

Energy Technology Data Exchange (ETDEWEB)

Lim, Young Soo, E-mail: yslim@pknu.ac.kr, E-mail: wsseo@kicet.re.kr, E-mail: pmoka@lgchem.com [Department of Materials System Engineering, Pukyong National University, Busan 48547 (Korea, Republic of); Park, Kwan-Ho; Tak, Jang Yeul; Lee, Soonil; Seo, Won-Seon, E-mail: yslim@pknu.ac.kr, E-mail: wsseo@kicet.re.kr, E-mail: pmoka@lgchem.com [Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology (KICET), Jinju 52851 (Korea, Republic of); Park, Cheol-Hee, E-mail: yslim@pknu.ac.kr, E-mail: wsseo@kicet.re.kr, E-mail: pmoka@lgchem.com; Kim, Tae Hoon; Park, PumSuk [LG Chem/Research Park, Daejeon 34122 (Korea, Republic of); Kim, Il-Ho [Department of Materials Science and Engineering, Korea National University of Transportation, Chungju 27909 (Korea, Republic of); Yang, Jihui [Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195 (United States)

2016-03-21

Among many kinds of thermoelectric materials, CoSb{sub 3} has received exceptional attention for automotive waste heat recovery. Its cage structure provides an ideal framework for the realization of phonon-glass electron-crystal strategy, and there have been numerous reports on the enhanced thermoelectric performance through the independent control of the thermal and electrical conductivity by introducing fillers into its cage sites. Herein, we report colligative thermoelectric transport properties in n-type CoSb{sub 3} from the viewpoint of “guest electrons in a host lattice.” Both the Seebeck coefficient and the charge transport properties are fundamentally determined by the concentration of the guest electrons, which are mostly donated by the fillers, in the conduction band of the host CoSb{sub 3}. Comparing this observation to our previous results, colligative relations for both the Seebeck coefficient and the mobility were deduced as functions of the carrier concentration, and thermoelectric transport constants were defined to predict the power factor in filled CoSb{sub 3}. This discovery not only increases the degree of freedom for choosing a filler but also provides the predictability of power factor in designing and engineering the n-type filled CoSb{sub 3} materials.

Chemically deposited Sb{sub 2}S{sub 3} thin films for optical recording

Energy Technology Data Exchange (ETDEWEB)

Shaji, S; Arato, A; Castillo, G Alan; Palma, M I Mendivil; Roy, T K Das; Krishnan, B [Facultad de IngenierIa Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P- 66450 (Mexico); O' Brien, J J; Liu, J, E-mail: bkrishnan@fime.uanl.m [Center for Nanoscience and Department of Chemistry and Biochemistry, University of Missouri-St. Louis, One Univ. Blvd., St. Louis, MO - 63121 (United States)

2010-02-24

Laser induced changes in the properties of Sb{sub 2}S{sub 3} thin films prepared by chemical bath deposition are described in this paper. Sb{sub 2}S{sub 3} thin films of thickness 550 nm were deposited from a solution containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3} at 27 {sup 0}C for 5 h. These thin films were irradiated by a 532 nm continuous wave laser beam under different conditions at ambient atmosphere. X-ray diffraction analysis showed amorphous to polycrystalline transformation due to laser exposure of these thin films. Morphology and composition of these films were described. Optical properties of these films before and after laser irradiation were analysed. The optical band gap of the material was decreased due to laser induced crystallization. The results obtained confirm that there is further scope for developing this material as an optical recording media.

Two-mode Diode-laser Spectroscopy with a InAsSb/InAsSbP Laser near 3.6 ćm

Czech Academy of Sciences Publication Activity Database

Civiš, Svatopluk; Danilova, A. P.; Imenkov, A. N.; Kolchanova, N. M.; Sherstnev, V. V.; Yakovlev, Yu. P.

1999-01-01

Roč. 33, č. 12 (1999), s. 1322-1327 ISSN 1063-7826 R&D Projects: GA AV ČR IAA4040708 Institutional research plan: CEZ:A54/98:Z4-040-9-ii Keywords : output frequency of InAsSb/InAsSbP * current dependence Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 0.565, year: 1999

Optical nonlinear absorption characteristics of Sb2Se3 nanoparticles

Science.gov (United States)

Muralikrishna, Molli; Kiran, Aditha Sai; Ravikanth, B.; Sowmendran, P.; Muthukumar, V. Sai; Venkataramaniah, Kamisetti

2014-04-01

In this work, we report for the first time, the nonlinear optical absorption properties of antimony selenide (Sb2Se3) nanoparticles synthesized through solvothermal route. X-ray diffraction results revealed the crystalline nature of the nanoparticles. Electron microscopy studies revealed that the nanoparticles are in the range of 10 - 40 nm. Elemental analysis was performed using EDAX. By employing open aperture z-scan technique, we have evaluated the effective two-photon absorption coefficient of Sb2Se3 nanoparticles to be 5e-10 m/W at 532 nm. These nanoparticles exhibit strong intensity dependent nonlinear optical absorption and hence could be considered to have optical power limiting applications in the visible range.

Sb{sup III} - Sb{sup V} Exchange Reaction in Hydrochloric: Acid Solutions; Echange Sb{sup III}-Sb{sup V} dans des Solutions d'Acide Chlorhydrique; Reaktsiya obmena Sb(III) - Sb(V) v rastvorakh khloristovodorodnoj kisloty; Intercambio Sb{sup III}-Sb{sup V} en Soluciones de HCl

Energy Technology Data Exchange (ETDEWEB)

Kambara, T.; Yamaguchi, K.; Yasuba, S. [Shizuoka University, Shizuoka City (Japan)

1965-10-15

the chloride concentration was increased to 3.0M by an addition of LiCl. It is noteworthy that an almost linear and sharp increase of the rate was observed until 2.0M chloride concentration. The above fact obtained at a constant hydrogen ion concentration suggests that the chloride atoms act as bridge formation atoms of the intermediate compound for the antimony exchange. To summarize these results, the existence of the maximum exchange rate at about 2.0M HCl concentration in a low HCl concentration region is thought to be well explained. (author) [French] En utilisant {sup 124}Sb comme radioindicateur, les auteurs ont etudie l'echange Sb{sup III} - Sb{sup V} dans des solutions diluees de HCl, notamment les effets de la concentration en HCl et de la forme chimique de l'antimoine sur la vitesse d'echange. Ils ont fait varier la concentration en HCl des solutions d'antimoine ((Sb{sup III}) =(Sb{sup V}) = 6.8 x 10{sup -4}M) de 0,8 a 4,0M et ils ont mesure le temps de demi-echange en tracant la courbe de log(1 - F) en fonction du temps t, en vue de calculer la vitesse d'echange, la reaction etant supposee du deuxieme ordre. Les auteurs ont constate que la vitesse d'echange augmentait fortement avec l'accroissement de la concentration en HCl (a 25 Degree-Sign C, de 0,8 a 2,0M); le maximum a ete atteint pour une concentration de 2,0M, apres quoi la vitesse a diminue avec l'augmentation de la concentration en HCl (a 25 Degree-Sign C, de 2,0 J 4,0M). Dans leurs recherches, les auteurs ont eu recours a deux Sb{sup V}; ils ont utilise le premier aussitot apres dilution dans l'eau d'une solution de Sb{sup V} dans HCl 10M, et la seconde apres avoir laisse reposer 24 heures a la temperature ambiante. (On a aussi laisse reposer les especes de Sb{sup III} apres les avoir preparees a partir d'une solution de Sb{sup III} dans HCl 10M). Dans les deux cas, les maximums ont ete atteints pour une concentration de 2,0M. Dans le premier cas (aussitot apres dilution), la vitesse R{sub 1

Large-scale synthesis of double cauliflower-like Sb{sub 2}S{sub 3} microcrystallines by hydrothermal method

Energy Technology Data Exchange (ETDEWEB)

Wu, Lei [Key Laboratory for Soft Chemistry and Functional Materials, Ministry of Education (China); Xu, Hanyue [School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Han, Qiaofeng, E-mail: hanqiaofeng@njust.edu.cn [Key Laboratory for Soft Chemistry and Functional Materials, Ministry of Education (China); Wang, Xin [Key Laboratory for Soft Chemistry and Functional Materials, Ministry of Education (China)

2013-09-25

Highlights: •Highly uniform double cauliflower-like Sb{sub 2}S{sub 3} particles were synthesized via hydrothermal method. •Influence of reaction conditions on the morphology of the products was discussed. •Double cauliflower-like Sb{sub 2}S{sub 3} superstructures revealed broad spectrum response. -- Abstract: The double cauliflower-like Sb{sub 2}S{sub 3} superstructures assembled by nanorods were prepared using SbCl{sub 3} and Na{sub 2}S⋅9H{sub 2}O as raw materials, dodecyltrimethylammonium bromide (DTAB, C{sub 15}H{sub 31}BrN) as surfactant under acidic condition at 180 °C for 30 h. The structure, morphology and composition of the product were characterized by X-ray diffraction pattern (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and energy diffraction spectroscopy (EDS). The effect of reaction conditions including temperature, reaction time and surfactants on the sample morphology was discussed and a possible mechanism for the formation of cauliflower-like Sb{sub 2}S{sub 3} was proposed. The cauliflower-like Sb{sub 2}S{sub 3} microcrystallines revealed broad spectrum response, which may have a good application prospect in solar energy utilization and photoelectric conversion fields.

Designing new lithium-excess cathode materials from percolation theory: nanohighways in Li(x)Ni(2-4x/3)Sb(x/3)O2.

Science.gov (United States)

Twu, Nancy; Li, Xin; Urban, Alexander; Balasubramanian, Mahalingam; Lee, Jinhyuk; Liu, Lei; Ceder, Gerbrand

2015-01-14

Increasing lithium content is shown to be a successful strategy for designing new cathode materials. In layered Li(x)Ni(2-4x/3)Sb(x/3)O2 (x = 1.00-1.15), lithium excess improves both discharge capacity and capacity retention at 1C. Structural studies reveal a complex nanostructure pattern of Li-Sb and Ni-Sb ordering where the interface between these domains forms the correct local configuration for good lithium mobility. The <1 nm Li-Sb stripe domains and their interfaces thereby effectively act as nanohighways for lithium diffusion.

InSb semiconductors and (In,Mn)Sb diluted magnetic semiconductors. Growth and properties

Energy Technology Data Exchange (ETDEWEB)

Tran, Lien

2011-04-13

This dissertation describes investigations of the growth by molecular beam epitaxy and the characterization of the semiconductor InSb as well as the diluted magnetic semiconductor (DMS) In{sub 1-x}Mn{sub x}Sb. The InSb films were grown on GaAs (001) substrate and Si (001) offcut by 4 toward (110) substrate up to a thickness of about 2 {mu}m, in spite of a large lattice mismatch between the epi-layer and substrate (14.6% between InSb and GaAs, and 19.3% between InSb and Si). After optimizing the growth conditions, the best InSb films grown directly on GaAs without any special technique results in a high crystal quality, low noise, and an electron mobility of 41100 cm{sup 2}/V s Vs with associated electron concentration of 2.9.10{sup 6} cm{sup -3} at 300 K. Such structures could be used, for example, for infrared detector structures. The growth of InSb on Si, however, is a challenge. In order to successfully grow InSb on Si, tilted substrates and the insertion of buffer layers were used, which helps to reduce the lattice mismatch as well as the formation of defects, and hence to improve the crystal quality. An electron mobility of 24000 cm{sup 2}/V s measured at 300 K, with an associated carrier concentration of 2.6.10{sup 1}6 cm{sup -3} is found for the best sample that was grown at 340 C with a 0.06 {mu}m-thick GaSb/AlSb superlattice buffer layer. The smaller value of electron mobility (compared to the best GaAsbased sample) is related to a higher density of microtwins and stacking faults as well as threading dislocations in the near-interface region as shown by transmission electron microscopy. Deep level noise spectra indicate the existence of deep levels in both GaAs and Si-based samples. The samples grown on Si exhibit the lowest Hooge factor at 300 K, lower than the samples grown on GaAs. Taking the optimized growth conditions of InSb/GaAs, the diluted magnetic semiconductor In{sub 1-x}Mn{sub x}Sb/GaAs (001) is prepared by adding a few percent of Mn into the

Enhanced electrical transport and thermoelectric properties in Ni doped Cu3SbSe4

Science.gov (United States)

Kumar, Aparabal; Dhama, P.; Das, Anish; Sarkar, Kalyan Jyoti; Banerji, P.

2018-05-01

In this study, we report the enhanced thermoelectric performance of Cu3SbSe4 by Ni doping at Cu site. Cu3-xNixSbSe4 (x = 0, 0.01, 0.03, 0.05) were prepared by melt growth, ball milling followed by spark plasma sintering. Structural characterization, phase analysis and surface morphology were carried out using X-ray diffraction, field emission scanning electron microscopy and energy dispersive X-ray spectroscopy. Electrical and thermal properties of all the samples were investigated in the temperature range 300 - 650 K. Decrease in electrical resistivity with Ni doping due to increase in carrier concentration with enhanced Seebeck coefficient via increase in density of state near the Fermi level gives a remarkably high power factor. At the same time, thermal conductivity was found to decrease due to increased carrier-phonon scattering and acoustic phonon scattering. Consequently, a remarkable enhancement in the thermoelectric figure of merit (ZT˜ 0.65) of Cu3-xNixSbSe4 was achieved for x = 0.01 sample. Thus, Ni doping is an effective approach to improve the efficiency of Cu3SbSe4.

Ambipolar field effect in the ternary topological insulator (BixSb1–x)2Te3 by composition tuning

KAUST Repository

Kong, Desheng

2011-10-02

Topological insulators exhibit a bulk energy gap and spin-polarized surface states that lead to unique electronic properties 1-9, with potential applications in spintronics and quantum information processing. However, transport measurements have typically been dominated by residual bulk charge carriers originating from crystal defects or environmental doping 10-12, and these mask the contribution of surface carriers to charge transport in these materials. Controlling bulk carriers in current topological insulator materials, such as the binary sesquichalcogenides Bi 2Te 3, Sb 2Te 3 and Bi 2Se 3, has been explored extensively by means of material doping 8,9,11 and electrical gating 13-16, but limited progress has been made to achieve nanostructures with low bulk conductivity for electronic device applications. Here we demonstrate that the ternary sesquichalcogenide (Bi xSb 1-x) 2Te 3 is a tunable topological insulator system. By tuning the ratio of bismuth to antimony, we are able to reduce the bulk carrier density by over two orders of magnitude, while maintaining the topological insulator properties. As a result, we observe a clear ambipolar gating effect in (Bi xSb 1-x) 2Te 3 nanoplate field-effect transistor devices, similar to that observed in graphene field-effect transistor devices 17. The manipulation of carrier type and density in topological insulator nanostructures demonstrated here paves the way for the implementation of topological insulators in nanoelectronics and spintronics. © 2011 Macmillan Publishers Limited. All rights reserved.

InSb semiconductors and (In,Mn)Sb diluted magnetic semiconductors: Growth and properties

International Nuclear Information System (INIS)

Tran, Lien

2011-01-01

This dissertation describes investigations of the growth by molecular beam epitaxy and the characterization of the semiconductor InSb as well as the diluted magnetic semiconductor (DMS) In 1-x Mn x Sb. The InSb films were grown on GaAs (001) substrate and Si (001) offcut by 4 toward (110) substrate up to a thickness of about 2 μm, in spite of a large lattice mismatch between the epi-layer and substrate (14.6% between InSb and GaAs, and 19.3% between InSb and Si). After optimizing the growth conditions, the best InSb films grown directly on GaAs without any special technique results in a high crystal quality, low noise, and an electron mobility of 41100 cm 2 /V s Vs with associated electron concentration of 2.9.10 6 cm -3 at 300 K. Such structures could be used, for example, for infrared detector structures. The growth of InSb on Si, however, is a challenge. In order to successfully grow InSb on Si, tilted substrates and the insertion of buffer layers were used, which helps to reduce the lattice mismatch as well as the formation of defects, and hence to improve the crystal quality. An electron mobility of 24000 cm 2 /V s measured at 300 K, with an associated carrier concentration of 2.6.10 1 6 cm -3 is found for the best sample that was grown at 340 C with a 0.06 μm-thick GaSb/AlSb superlattice buffer layer. The smaller value of electron mobility (compared to the best GaAsbased sample) is related to a higher density of microtwins and stacking faults as well as threading dislocations in the near-interface region as shown by transmission electron microscopy. Deep level noise spectra indicate the existence of deep levels in both GaAs and Si-based samples. The samples grown on Si exhibit the lowest Hooge factor at 300 K, lower than the samples grown on GaAs. Taking the optimized growth conditions of InSb/GaAs, the diluted magnetic semiconductor In 1-x Mn x Sb/GaAs (001) is prepared by adding a few percent of Mn into the host material InSb during growth. I have

High-temperature thermoelectric properties of p-type skutterudites Ba0.15Yb x Co3FeSb12 and Yb y Co3FeSb9As3

KAUST Repository

Dong, Yongkwan

2014-08-28

Two series of p-type polycrystalline skutterudites, Ba0.15YbxCo3FeSb12 and YbyCo3FeSb9As3 with varying Yb concentrations, were synthesized by solid-state reaction and then densified by hot pressing. The phase and stoichiometries of the resulting materials were characterized by powder X-ray diffraction and energy dispersive spectroscopy, while their high-temperature transport properties were investigated from 300 to 800 K. The Seebeck coefficients and electrical resistivities increased linearly with increasing temperature for the double-filled specimens. The Seebeck coefficients and electrical resistivities did not change very much for the As-substituted specimens. The thermal conductivity for all specimens decreased with increasing temperature up to 700 K, corresponding to the plateau in the Seebeck coefficient, and then increased again due to bipolar diffusion. We find that double filling is a more feasible approach to thermoelectric property optimization than single filling with As substitution. © 2014 Springer Science+Business Media New York.

Bournonite PbCuSbS3 : Stereochemically Active Lone-Pair Electrons that Induce Low Thermal Conductivity.

Science.gov (United States)

Dong, Yongkwan; Khabibullin, Artem R; Wei, Kaya; Salvador, James R; Nolas, George S; Woods, Lilia M

2015-10-26

An understanding of the structural features and bonding of a particular material, and the properties these features impart on its physical characteristics, is essential in the search for new systems that are of technological interest. For several relevant applications, the design or discovery of low thermal conductivity materials is of great importance. We report on the synthesis, crystal structure, thermal conductivity, and electronic-structure calculations of one such material, PbCuSbS3 . Our analysis is presented in terms of a comparative study with Sb2 S3 , from which PbCuSbS3 can be derived through cation substitution. The measured low thermal conductivity of PbCuSbS3 is explained by the distortive environment of the Pb and Sb atoms from the stereochemically active lone-pair s(2) electrons and their pronounced repulsive interaction. Our investigation suggests a general approach for the design of materials for phase-change-memory, thermal-barrier, thermal-rectification and thermoelectric applications, as well as other functions for which low thermal conductivity is purposefully sought. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication, spark plasma consolidation, and thermoelectric evaluation of nanostructured CoSb₃

DEFF Research Database (Denmark)

Khan, A.; Saleemi, M.; Johnsson, M.

2014-01-01

Nanostructured powders of thermoelectric (TE) CoSb3 compounds were synthesized using a chemical alloying method. This method involved co-precipitation of oxalate precursors in aqueous solution with controlled pH, followed by thermochemical treatments including calcination and reduction to produce...... stoichiometric nanostructured CoSb3. Moreover, CoSb 3 nanoparticles were consolidated by spark plasma sintering (SPS) with a very brief processing time. Very high compaction densities (>95%) were achieved and the grain growth was almost negligible during consolidation. An iterative procedure was developed...... to minimize the grain growth while achieving sufficient densification. Grain sizes in the range of 500 nm to 1 μm, with compaction density of 95-98% were obtained. Preliminary measurements of thermal diffusivity and conductivity showed the dependence on grain size as well as on porosity. TE transport...

The E2.65A mutation disrupts dynamic binding poses of SB269652 at the dopamine D2 and D3 receptors.

Directory of Open Access Journals (Sweden)

Ravi Kumar Verma

2018-01-01

Full Text Available The dopamine D2 and D3 receptors (D2R and D3R are important targets for antipsychotics and for the treatment of drug abuse. SB269652, a bitopic ligand that simultaneously binds both the orthosteric binding site (OBS and a secondary binding pocket (SBP in both D2R and D3R, was found to be a negative allosteric modulator. Previous studies identified Glu2.65 in the SBP to be a key determinant of both the affinity of SB269652 and the magnitude of its cooperativity with orthosteric ligands, as the E2.65A mutation decreased both of these parameters. However, the proposed hydrogen bond (H-bond between Glu2.65 and the indole moiety of SB269652 is not a strong interaction, and a structure activity relationship study of SB269652 indicates that this H-bond may not be the only element that determines its allosteric properties. To understand the structural basis of the observed phenotype of E2.65A, we carried out molecular dynamics simulations with a cumulative length of ~77 μs of D2R and D3R wild-type and their E2.65A mutants bound to SB269652. In combination with Markov state model analysis and by characterizing the equilibria of ligand binding modes in different conditions, we found that in both D2R and D3R, whereas the tetrahydroisoquinoline moiety of SB269652 is stably bound in the OBS, the indole-2-carboxamide moiety is dynamic and only intermittently forms H-bonds with Glu2.65. Our results also indicate that the E2.65A mutation significantly affects the overall shape and size of the SBP, as well as the conformation of the N terminus. Thus, our findings suggest that the key role of Glu2.65 in mediating the allosteric properties of SB269652 extends beyond a direct interaction with SB269652, and provide structural insights for rational design of SB269652 derivatives that may retain its allosteric properties.

Study of Sb2S3 thin films deposited by SILAR method

Science.gov (United States)

Deshpande, M. P.; Chauhan, Krishna; Patel, Kiran N.; Rajput, Piyush; Bhoi, Hiteshkumar R.; Chaki, S. H.

2018-05-01

In the present work, we deposited Sb2S3 thin films on glass slide by successive ionic layer adsorption and reaction (SILAR) technique with different time cycles. From EDAX, we could observe that the films were non-stoichiometric and contained few elements from glass slide. X-ray diffraction has shown that these films are orthorhombic in structure from where we have calculated the lattice parameter and crystallize size. SEM images shows that SILAR synthesized Sb2S3 thin films are homogenous and well distributed indicating the formation of uniform thin films at lower concentration. The room temperature Raman spectra of Sb2S3 thin films showed sharp peaks at 250 cm‑1 and 300 cm‑1 for all cases. Room temperature photoluminescence emission spectrum shows broad bands over 430–480 nm range with strong blue emission peak centered at same wavelength of 460 nm (2.70 eV) for all cases.

Synthesis of Novel YbxSb2 − xTe3 Hexagonal Nanoplates: Investigation of Their Physical, Structural, and Photocatalytic Properties

Directory of Open Access Journals (Sweden)

Younes Hanifehpour

2014-01-01

Full Text Available Yb-doped Sb2Te3 nanomaterials were synthesized by a coreduction method in hydrothermal condition. Powder X-ray diffraction patterns indicate that the YbxSb2−xTe3 crystals (x=0.00–0.05 are isostructural with Sb2Te3. The cell parameter a decreases for YbxSb2−xTe3 compounds upon increasing the dopant content (x, while c increases. Scanning electron microscopy and transmission electron microscopy images show that doping of Yb3+ ions in the lattice of Sb2Te3 produces different morphology. The electrical conductivity of Yb-doped Sb2Te3 is higher than the pure Sb2Te3 and increases with temperature. By increasing concentration of the Yb3+ ions, the absorption spectrum of Sb2Te3 shows red shifts and some intensity changes. In addition to the characteristic red emission peaks of Sb2Te3, emission spectra of doped materials show other emission bands originating from f-f transitions of the Yb3+ ions. The photocatalytic performance of as-synthesized nanoparticles was investigated towards the decolorization of Malachite Green solution under visible light irradiation.

Preclinical and first clinical experience with the gastrin-releasing peptide receptor-antagonist [⁶⁸Ga]SB3 and PET/CT.

Science.gov (United States)

Maina, Theodosia; Bergsma, Hendrik; Kulkarni, Harshad R; Mueller, Dirk; Charalambidis, David; Krenning, Eric P; Nock, Berthold A; de Jong, Marion; Baum, Richard P

2016-05-01

Gastrin-releasing peptide receptors (GRPR) represent attractive targets for tumor diagnosis and therapy because of their overexpression in major human cancers. Internalizing GRPR agonists were initially proposed for prolonged lesion retention, but a shift of paradigm to GRPR antagonists has recently been made. Surprisingly, radioantagonists, such as [(99m)Tc]DB1 ((99m)Tc-N4'-DPhe(6),Leu-NHEt(13)]BBN(6-13)), displayed better pharmacokinetics than radioagonists, in addition to their higher inherent biosafety. We introduce here [(68)Ga]SB3, a [(99m)Tc]DB1 mimic-carrying, instead of the (99m)Tc-binding tetraamine, the chelator DOTA for labeling with the PET radiometal (68)Ga. Competition binding assays of SB3 and [(nat)Ga]SB3 were conducted against [(125)I-Tyr(4)]BBN in PC-3 cell membranes. Blood samples collected 5 min postinjection (pi) of the [(67)Ga]SB3 surrogate in mice were analyzed using high-performance liquid chromatography (HPLC) for degradation products. Likewise, biodistribution was performed after injection of [(67)Ga]SB3 (37 kBq, 100 μL, 10 pmol peptide) in severe combined immunodeficiency (SCID) mice bearing PC-3 xenografts. Eventually, [(68)Ga]SB3 (283 ± 91 MBq, 23 ± 7 nmol) was injected into 17 patients with breast (8) and prostate (9) cancer. All patients had disseminated disease and had received previous therapies. PET/CT fusion images were acquired 60-115 min pi. SB3 and [(nat)Ga]SB3 bound to the human GRPR with high affinity (IC50: 4.6 ± 0.5 nM and 1.5 ± 0.3 nM, respectively). [(67)Ga]SB3 displayed good in vivo stability (>85 % intact at 5 min pi). [(67)Ga]SB3 showed high, GRPR-specific and prolonged retention in PC-3 xenografts (33.1 ± 3.9%ID/g at 1 h pi - 27.0 ± 0.9%ID/g at 24 h pi), but much faster clearance from the GRPR-rich pancreas (≈160%ID/g at 1 h pi to <17%ID/g at 24 h pi) in mice. In patients, [(68)Ga]SB3 elicited no adverse effects and clearly visualized cancer lesions. Thus, 4 out of 8 (50 %) breast

Preparation of Sb2S3 nanocrystals modified TiO2 dendritic structure with nanotubes for hybrid solar cell

Science.gov (United States)

Li, Yingpin; Wei, Yanan; Feng, Kangning; Hao, Yanzhong; Pei, Juan; Sun, Bao

2018-06-01

Array of TiO2 dendritic structure with nanotubes was constructed on transparent conductive fluorine-doped tin oxide glass (FTO) with titanium potassium oxalate as titanium source. Sb2S3 nanocrystals were successfully deposited on the TiO2 substrate via spin-coating method. Furthermore, TiO2/Sb2S3/P3HT/PEDOT:PSS composite film was prepared by successively spin-coating P3HT and PEDOT:PSS on TiO2/Sb2S3. It was demonstrated that the modification of TiO2 dendritic structure with Sb2S3 could enhance the light absorption in the visible region. The champion hybrid solar cell assembled by TiO2/Sb2S3/P3HT/PEDOT:PSS composite film achieved a power conversion efficiency (PCE) of 1.56%.

Ga-Ga bonding and tunnel framework in the new Zintl phase Ba{sub 3}Ga{sub 4}Sb{sub 5}

Energy Technology Data Exchange (ETDEWEB)

Park, S -M; Kim, S -J; Kanatzidis, M G

2003-11-01

A new Zintl phase Ba{sub 3}Ga{sub 4}Sb{sub 5} was obtained from the reaction of Ba and Sb in excess Ga flux at 1000 deg. C, and its structure was determined with single-crystal X-ray diffraction methods. It crystallizes in the orthorhombic space group Pnma (No. 62) with a=13.248(3) A, b=4.5085(9) A, c=24.374(5) A and Z=4. Ba{sub 3}Ga{sub 4}Sb{sub 5} has a three-dimensional [Ga{sub 4}Sb{sub 5}]{sup 6-} framework featuring large tunnels running along the b-axis and accommodating the Ba ions. The structure also has small tube-like tunnels of pentagonal and rhombic cross-sections. The structure contains ethane-like dimeric Sb{sub 3}Ga-GaSb{sub 3} units and GaSb{sub 4} tetrahedra that are connected to form 12- and 14-membered tunnels. Band structure calculations confirm that the material is a semiconductor and indicate that the structure is stabilized by strong Ga-Ga covalent bonding interactions.

Sb-related defects in Sb-doped ZnO thin film grown by pulsed laser deposition

Science.gov (United States)

Luo, Caiqin; Ho, Lok-Ping; Azad, Fahad; Anwand, Wolfgang; Butterling, Maik; Wagner, Andreas; Kuznetsov, Andrej; Zhu, Hai; Su, Shichen; Ling, Francis Chi-Chung

2018-04-01

Sb-doped ZnO films were fabricated on c-plane sapphire using the pulsed laser deposition method and characterized by Hall effect measurement, X-ray photoelectron spectroscopy, X-ray diffraction, photoluminescence, and positron annihilation spectroscopy. Systematic studies on the growth conditions with different Sb composition, oxygen pressure, and post-growth annealing were conducted. If the Sb doping concentration is lower than the threshold ˜8 × 1020 cm-3, the as-grown films grown with an appropriate oxygen pressure could be n˜4 × 1020 cm-3. The shallow donor was attributed to the SbZn related defect. Annealing these samples led to the formation of the SbZn-2VZn shallow acceptor which subsequently compensated for the free carrier. For samples with Sb concentration exceeding the threshold, the yielded as-grown samples were highly resistive. X-ray diffraction results showed that the Sb dopant occupied the O site rather than the Zn site as the Sb doping exceeded the threshold, whereas the SbO related deep acceptor was responsible for the high resistivity of the samples.

19 CFR 202.6 - Reports.

Science.gov (United States)

2010-04-01

... 19 Customs Duties 3 2010-04-01 2010-04-01 false Reports. 202.6 Section 202.6 Customs Duties UNITED... PRODUCTION § 202.6 Reports. After the completion of its investigation, the Commission will incorporate its findings in a report, and the report will be transmitted to the President. ...

Crystal structure, chemical bond and enhanced performance of β-Zn{sub 4}Sb{sub 3} compounds with interstitial indium dopant

Energy Technology Data Exchange (ETDEWEB)

Tang, Dingguo [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Key Laboratory of Catalysis and Materials Science of the State Ethnic Affair Commission and Ministry of Education, South-Central University for Nationalities, Wuhan 430074 (China); Zhao, Wenyu, E-mail: wyzhao@whut.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Yu, Jian; Wei, Ping; Zhou, Hongyu; Zhu, Wanting [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Zhang, Qingjie, E-mail: zhangqj@whut.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China)

2014-07-15

Highlights: • The interstitial In dopant leads to the local structural perturbations in β-Zn{sub 4}Sb{sub 3}. • The simultaneous increases in α and σ are observed in the In-doped Zn{sub 4}Sb{sub 3} compounds. • The In dopant plays different doping behaviors by the dopant contents in the samples. • A maximum ZT of 1.41 at 700 K is achieved for the In-doped Zn{sub 4}Sb{sub 3} compounds. - Abstract: In-doped β-Zn{sub 4}Sb{sub 3} compounds (Zn{sub 4−x}In{sub x}Sb{sub 3}, 0 ⩽ x ⩽ 0.24) were prepared by melt-quenching and spark plasma sintering technology in the work. The resultant samples were systematically investigated by X-ray diffraction, X-ray photoelectron spectroscopy, differential scanning calorimetry and thermoelectric property measurements. The In dopant was identified to preferentially occupy the interstitial site in β-Zn{sub 4}Sb{sub 3} and led to the local structural perturbations near the 12c Sb2 and 36f Zn1 sites. The Auger parameters of Zn and Sb indicated that the increase in the valence of Zn was attributed to the charge transfer from Zn to In atoms. The binding energies of In 3d{sub 5/2} core level showed that the interstitial In dopant was n-type dopant (In{sup 3+}) in slightly In-doped Zn{sub 4−x}In{sub x}Sb{sub 3}, but acted as acceptor and was p-type dopant (In{sup +}) in heavily In-doped ones. The discovery provides a reasonable explanation for the puzzled relation between σ and x for Zn{sub 4−x}In{sub x}Sb{sub 3}. Simultaneously increasing the electrical conductivity and Seebeck coefficient of Zn{sub 4−x}In{sub x}Sb{sub 3} can be realized through the local structural perturbations. The significantly enhanced power factor and the intrinsic low thermal conductivity resulted in a remarkable increase in the dimensionless figure of merit (ZT). The highest ZT reached 1.41 at 700 K for Zn{sub 3.82}In{sub 0.18}Sb{sub 3} and increased by 68% compared with that of the undoped β-Zn{sub 4}Sb{sub 3}.

Electrical properties of Sb and Cr-doped PbZrO3-PbTiO3-PbMg1/3Nb2/3O3 ceramics

OpenAIRE

Whatmore, Roger W.; Molter, O.; Shaw, Christopher P.

2003-01-01

The pyroelectric, dielectric and DC resistive properties of Sb and Cr-doped ceramics with a base composition of Pb(Mg1/3Nb2/3)0.025(Zr0.825Ti0.175)0.975O3 have been studied. Sb doping has been shown to produce a linear reduction in Curie temperature (TC=−22z+294 °C) with concentration (z) and to give an increase in pyroelectric coefficient from 250 to 310 μCm−2 K−1 for z increasing from 0 to 3 at.%. It also produces first a reduction and then an increase in both dielectric constant and loss, ...

The Microstructure and Tensile Properties of a Newly Developed Mg-Al/Mg3Sb2 In Situ Composite in As-Cast and Extruded Conditions

Science.gov (United States)

Montajabnia, A.; Pourbahari, B.; Emamy, M.

2018-04-01

The microstructures and tensile properties of Mg-x wt%Al-y wt%Sb alloys have been studied where x/y ratio was 1 and Sb(Al) contents were 5, 10, 15 and 20 wt%, respectively. The results indicated that by increasing Sb(Al) content, not only the crystals of primary Mg3Sb2 alter from small flake-like particles to polygonal or needle-like morphology, but also the eutectic structure changes from semi-continuous network in Mg-5Al-5Sb to continuous network in Mg-20Sb-20Al alloy. The results obtained from thermal analysis revealed different peaks related to the formation of Mg3Sb2 as primary phase and eutectic structure containing Mg17Al12 + Al3Mg2 intermetallic phases. Further results also revealed that Sb(Al) additions change the solidification performance of the material by depressing the Mg3Sb2 nucleation temperature, reducing solidification range and widening eutectic area. Tensile testing results showed that with the increase in Sb (Al) content, ultimate tensile strength (UTS) and elongation values of the alloys are decreased in as-cast condition. But, significant improvement in the UTS and elongation values of the extruded specimens was attributed to the severe fragmentation of intermetallic phases and well distributed fine particles in the matrix which provided proper obstacles for dislocation motion. It was interesting to note that the fracture behavior of intermetallic particles was found to be different, while Mg3Sb2 was ductile, intermetallic compounds in eutectic regions were brittle.

Codoping of Sb2Te3 thin films with V and Cr

Science.gov (United States)

Duffy, L. B.; Figueroa, A. I.; van der Laan, G.; Hesjedal, T.

2017-11-01

Magnetically doped topological insulators (TIs) are key to realizing the quantum anomalous Hall (QAH) effect, with the prospect of enabling dissipationless electronic devices in the future. Doping of the well-established three-dimensional TIs of the (Bi,Sb) 2(Se,Te) 3 family with the transition metals Cr and V is now an established approach for observing the QAH state at very low temperatures. While the magnetic transition temperatures of these materials are on the order of tens of degrees Kelvin, full quantization of the QAH state is achieved below ˜100 mK, governed by the size of the magnetic gap and thus the out-of-plane magnetic moment. In an attempt to raise the size of the magnetic moment and transition temperature, we carried out a structural and magnetic investigation of codoped (V,Cr):Sb2Te3 thin films. Starting from singly doped Cr:Sb2Te3 films, free of secondary phases and with a transition temperature of ˜72 K, we introduced increasing fractions of V and found a doubling of the transition temperature, while the magnetic moment decreases. In order to separate the properties and contributions of the two transition metals in the complex doping scenario independently, we employed spectroscopic x-ray techniques. Surprisingly, already small amounts of V lead to the formation of the secondary phase Cr2Te3 . No V was detectable in the Sb2Te3 matrix. Instead, it acts as a surfactant and can be found in the near-surface layers at the end of the growth. Our paper highlights the importance of x-ray-based studies for the doping of van der Waals systems, for which the optimization of magnetic moment or transition temperature alone is not necessarily a good strategy.

Thermoelectric characterization of Sb{sub 2}Te{sub 3} thin films deposited by ALD

Energy Technology Data Exchange (ETDEWEB)

Zastrow, Sebastian; Schumacher, Christian; Nielsch, Kornelius [University of Hamburg (Germany); Regus, Matthias [University of Kiel (Germany); Schulz, Stephan [University of Duisburg-Essen (Germany)

2012-07-01

Thermoelectric materials can be used as temperature sensors or peltier cooling devices as well as to recover a part of the massive losses of energy due to the waste heat generated in fossil-fuel driven power plants and vehicles. Antimony Telluride (Sb{sub 2}Te{sub 3}) is a p-doped semiconductor and in the focus of interest for room temperature applications because of its thermoelectric peak performance at around 350 K. However, thermoelectric properties of Sb{sub 2}Te{sub 3} ALD thin films have not been reported yet. Based on the work of Pore et al., Sb{sub 2}Te{sub 3} is deposited with a home-made reactor on SiO{sub 2} by using (Et{sub 3}Si){sub 2}Te and SbCl{sub 3}. The surface roughness as well as the growth rate depend strongly on the deposition temperature as reported by Cu et al. To check the preferential growth directions and the composition, XRD and EDX measurements are carried out. The thermoelectric properties are influenced by the deposition parameters. Therefore, spatial scans of the Seebeck coefficient are performed and the electrical resistivity is measured. In order to enhance the thermoelectric performance, a first optimization by short annealing processes is done under helium atmosphere up to 570 K. The authors would like to thank the ''Karl-Vossloh-Stiftung''.

Comparison of the electrochemical performance of mesoscopic Cu2Sb, SnSb and Sn/SnSb alloy powders

International Nuclear Information System (INIS)

Zhang Ge; Huang Kelong; Liu Suqin; Zhang Wei; Gong Benli

2006-01-01

Cu 2 Sb, SnSb and Sn/SnSb mesoscopic alloy powders were prepared by chemical reduction, respectively. The crystal structures and particle morphology of Cu 2 Sb, SnSb and Sn/SnSb were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM). The electrochemical performances of the Cu 2 Sb, SnSb and Sn/SnSb electrodes were investigated by galvanostatic charge and discharge cycling and electrochemical impedance spectroscopy (EIS). The results showed the first charge and discharge capacities of SnSb and Sn/SnSb were higher than Cu 2 Sb, but after 15 cycles, the charge capacity fading rates of Cu 2 Sb, Sn/SnSb and Sn/SnSb were 26.16%, 55.33% and 47.39%, respectively. Cu 2 Sb had a better cycle performance, and Sn/SnSb multiphase alloy was prior to pure SnSb due to the existence of excessive Sn in Sn/SnSb system

Syntheses, and crystal and electronic structures of the new Zintl phases Na2ACdSb2 and K2ACdSb2 (A=Ca, Sr, Ba, Eu, Yb): Structural relationship with Yb2CdSb2 and the solid solutions Sr2-xAxCdSb2, Ba2-xAxCdSb2 and Eu2-xYbxCdSb2

International Nuclear Information System (INIS)

Saparov, Bayrammurad; Saito, Maia; Bobev, Svilen

2011-01-01

Presented are the details of the syntheses, crystal and electronic structures of a new family of Zintl phases Na 2 ACdSb 2 and K 2 ACdSb 2 (A=Ca, Sr, Ba, Eu, Yb), as well as the solid solutions Sr 2-x A x CdSb 2 , Ba 2-x A x CdSb 2 and Eu 2-x Yb x CdSb 2 . The structures of Na 2 ACdSb 2 and K 2 ACdSb 2 (A=Ca, Sr, Ba, Eu, Yb) were determined to be of a new type with the non-centrosymmetric space group Pmc2 1 (no. 26), Pearson symbol oP12, with lattice parameters a=4.684(1)-4.788(1) A; b=9.099(3)-9.117(2) A; c=7.837(1)-8.057(2) A for the Na 2 ACdSb 2 series, and a=4.6637(9)-5.0368(8) A; b=9.100(2)-9.8183(15) A; and c=7.7954(15)-8.4924(13) A for K 2 ACdSb 2 , respectively. The solid solutions Sr 2-x A x CdSb 2 , Ba 2-x A x CdSb 2 and Eu 2-x Yb x CdSb 2 (x∼1) are isostructural and isoelectronic to the recently reported Yb 2 CdSb 2 (space group Cmc2 1 (no. 36), Pearson symbol cP20). All discussed structures are based upon CdSb 2 4- polyanionic layers, similar to the ones observed in Yb 2 CdSb 2 , with various alkali- and/or alkaline-earth cations coordinated to them. Magnetic susceptibility and Seebeck coefficient measurements on selected Eu 2-x Yb x CdSb 2 samples, taken at low temperatures up to 300 K, are also reported. -- Graphical abstract: The quaternary Zintl phases Na 2 ACdSb 2 and K 2 ACdSb 2 (A=Ca, Sr, Ba, Eu, Yb) with novel layered structures have been synthesized for the first time and structurally characterized by single-crystal X-ray diffraction. Reported as well are the results from crystallographic and property studies of the closely related solid solutions Sr 2-x A x CdSb 2 , Ba 2-x A x CdSb 2 (x∼1), and Eu 2-x Yb x CdSb 2 (1 2 ACdSb 2 and K 2 ACdSb 2 (A=Ca, Sr, Ba, Eu, Yb) are new quaternary Zintl phases. → Sr 2-x A x CdSb 2 , Ba 2-x A x CdSb 2 (x∼1), and Eu 2-x Yb x CdSb 2 (1 4 tetrahedra. → Eu 2-x Yb x CdSb 2 (1< x<2) exhibit high Seebeck coefficient (217 μV/K at RT).

Enhanced thermoelectric performance with participation of F-electrons in β-Zn4Sb3

International Nuclear Information System (INIS)

Liu, Mian; Qin, Xiaoying; Liu, Changsong; Li, Xiyu; Yang, Xiuhui

2014-01-01

Highlights: • Find an effective route to enhance the thermoelectric figure of merit of β-Zn 4 Sb 3 . • Provide the corresponding theoretical predictions. • Investigated the effects of doping Ce and Pr in β-Zn 4 Sb 3 . -- Abstract: The effects of rare-earth element impurities Ce and Pr on the electronic structure and thermoelectric properties of β-Zn 4 Sb 3 were investigated by performing self-consistent ab initio electronic structure calculations within density functional theory and solving the Boltzmann transport equations within the relaxation time approximation. The results demonstrated that these rare-earth element impurities with f orbitals could introduce giant sharp resonant peaks in the density of states (DOS) near the host valence band maximum in energy. And these deliberately engineered DOS peaks result in a sharp increase of the room-temperature Seebeck coefficient and power factor from those of impurity-free system by a factor of 100 and 22, respectively. Additionally, with the simultaneous declining of carrier thermal conductivity, a potential 5-fold increase at least with Ce doping and more than 3 times increase with Pr doping in the thermoelectric figure of merit of β-Zn 4 Sb 3 at room temperature are achieved. The effective DOS restructuring strategy opens up new opportunities for thermoelectric power generation and waste heat recovery at large scale

Roles of Cu in the Enhanced Thermoelectric Properties in Bi0.5Sb1.5Te3

Directory of Open Access Journals (Sweden)

Feng Hao

2017-03-01

Full Text Available Recently, Cu-containing p-type Bi0.5Sb1.5Te3 materials have shown high thermoelectric performances and promising prospects for practical application in low-grade waste heat recovery. However, the position of Cu in Bi0.5Sb1.5Te3 is controversial, and the roles of Cu in the enhancement of thermoelectric performance are still not clear. In this study, via defects analysis and stability test, the possibility of Cu intercalation in p-type Bi0.5Sb1.5Te3 materials has been excluded, and the position of Cu is identified as doping at the Sb sites. Additionally, the effects of Cu dopants on the electrical and thermal transport properties have been systematically investigated. Besides introducing additional holes, Cu dopants can also significantly enhance the carrier mobility by decreasing the Debye screen length and weakening the interaction between carriers and phonons. Meanwhile, the Cu dopants interrupt the periodicity of lattice vibration and bring stronger anharmonicity, leading to extremely low lattice thermal conductivity. Combining the suppression on the intrinsic excitation, a high thermoelectric performance—with a maximum thermoelectric figure of merit of around 1.4 at 430 K—has been achieved in Cu0.005Bi0.5Sb1.495Te3, which is 70% higher than the Bi0.5Sb1.5Te3 matrix.

Surface quantum oscillations and weak antilocalization effect in topological insulator (Bi0.3Sb0.7)2Te3

Science.gov (United States)

Urkude, Rajashri; Rawat, Rajeev; Palikundwar, Umesh

2018-04-01

In 3D topological insulators, achieving a genuine bulk-insulating state is an important topic of research. The material system (Bi,Sb)2(Te,Se)3 has been proposed as a topological insulator with high resistivity and low carrier concentration. Topological insulators are predicted to present interesting surface transport phenomena but their experimental studies have been hindered by metallic bulk conduction that overwhelms the surface transport. Here we present a study of the bulk-insulating properties of (Bi0.3Sb0.7)2Te3. We show that a high resistivity exceeding 1 Ωm as a result of variable-range hopping behavior of state and Shubnikov-de Haas oscillations as coming from the topological surface state. We have been able to clarify both the bulk and surface transport channels, establishing a comprehensive understanding of the transport properties in this material. Our results demonstrate that (Bi0.3Sb0.7)2Te3 is a good material for studying the surface quantum transport in a topological insulator.

Preclinical and first clinical experience with the gastrin-releasing peptide receptor-antagonist [{sup 68}Ga]SB3 and PET/CT

Energy Technology Data Exchange (ETDEWEB)

Maina, Theodosia; Charalambidis, David; Nock, Berthold A. [INRASTES, NCSR ' ' Demokritos' ' , Molecular Radiopharmacy, Athens (Greece); Bergsma, Hendrik; Krenning, Eric P. [Erasmus MC, Department of Nuclear Medicine, Rotterdam (Netherlands); Kulkarni, Harshad R.; Mueller, Dirk; Baum, Richard P. [Zentralklinik, Molecular Radiotherapy and Molecular Imaging, Bad Berka (Germany); Jong, Marion de [Erasmus MC, Department of Nuclear Medicine, Rotterdam (Netherlands); Erasmus MC, Department of Radiology, Rotterdam (Netherlands)

2016-05-15

Gastrin-releasing peptide receptors (GRPR) represent attractive targets for tumor diagnosis and therapy because of their overexpression in major human cancers. Internalizing GRPR agonists were initially proposed for prolonged lesion retention, but a shift of paradigm to GRPR antagonists has recently been made. Surprisingly, radioantagonists, such as [{sup 99m}Tc]DB1 ({sup 99m}Tc-N{sub 4}'-DPhe{sup 6},Leu-NHEt{sup 13}BBN(6-13)), displayed better pharmacokinetics than radioagonists, in addition to their higher inherent biosafety. We introduce here [{sup 68}Ga]SB3, a [{sup 99m}Tc]DB1 mimic-carrying, instead of the {sup 99m}Tc-binding tetraamine, the chelator DOTA for labeling with the PET radiometal {sup 68}Ga. Competition binding assays of SB3 and [{sup nat}Ga]SB3 were conducted against [{sup 125}I-Tyr{sup 4}]BBN in PC-3 cell membranes. Blood samples collected 5 min postinjection (pi) of the [{sup 67}Ga]SB3 surrogate in mice were analyzed using high-performance liquid chromatography (HPLC) for degradation products. Likewise, biodistribution was performed after injection of [{sup 67}Ga]SB3 (37 kBq, 100 μL, 10 pmol peptide) in severe combined immunodeficiency (SCID) mice bearing PC-3 xenografts. Eventually, [{sup 68}Ga]SB3 (283 ± 91 MBq, 23 ± 7 nmol) was injected into 17 patients with breast (8) and prostate (9) cancer. All patients had disseminated disease and had received previous therapies. PET/CT fusion images were acquired 60-115 min pi. SB3 and [{sup nat}Ga]SB3 bound to the human GRPR with high affinity (IC{sub 50}: 4.6 ± 0.5 nM and 1.5 ± 0.3 nM, respectively). [{sup 67}Ga]SB3 displayed good in vivo stability (>85 % intact at 5 min pi). [{sup 67}Ga]SB3 showed high, GRPR-specific and prolonged retention in PC-3 xenografts (33.1 ± 3.9%ID/g at 1 h pi - 27.0 ± 0.9%ID/g at 24 h pi), but much faster clearance from the GRPR-rich pancreas (∼160%ID/g at 1 h pi to <17%ID/g at 24 h pi) in mice. In patients, [{sup 68}Ga]SB3 elicited no adverse effects and

Electronic structure and high pressure phase transition in LaSb and CeSb

International Nuclear Information System (INIS)

Mathi Jaya, S.; Sanyal, S.P.

1992-09-01

The electronic structure and high pressure structural phase transition in cerium and lanthanum antimonides have been investigated using the tight binding LMTO method. The calculation of total energy reveals that the simple tetragonal structure is found to be stable at high pressures for both the compounds. In the case of LaSb, the calculated value of the equilibrium cell volume and the cell volume at which phase transition occurs are found to have a fairly good agreement with the experimental results. However, in the case of CeSb, the agreement is not as good as in LaSb. We also predicted the most favoured c/a value in the high pressure phase (simple tetragonal) for these compounds. Further we present the calculated results on the electronic structure of these systems at the equilibrium as well as at the reduced cell volumes. (author). 8 refs, 11 figs, 1 tab

Effect of lanthanide contraction on the mixed polyamine systems Ln/Sb/Se/(en+dien) and Ln/Sb/Se/(en+trien): Syntheses and characterizations of lanthanide complexes with a tetraelenidoantimonate ligand

International Nuclear Information System (INIS)

Zhao Jing; Liang Jingjing; Pan Yingli; Zhang Yong; Jia Dingxian

2011-01-01

Mixed polyamine systems Ln/Sb/Se/(en+dien) and Ln/Sb/Se/(en+trien) (Ln=lanthanide, en=ethylenediamine, dien=diethylenetriamine, trien=triethylenetetramine) were investigated under solvothermal conditions, and novel mixed-coordinated lanthanide(III) complexes [Ln(en) 2 (dien)(η 2 -SbSe 4 )] (Ln=Ce(1a), Nd(1b)), [Ln(en) 2 (dien)(SbSe 4 )] (Ln=Sm(2a), Gd(2b), Dy(2c)), [Ln(en)(trien)(μ-η 1 ,η 2 -SbSe 4 )] ∞ (Ln=Ce(3a), Nd(3b)) and [Sm(en)(trien)(η 2 -SbSe 4 )] (4a) were prepared. Two structural types of lanthanide selenidoantimonates were obtained across the lanthanide series in both en+dien and en+trien systems. The tetrahedral anion [SbSe 4 ] 3- acts as a monodentate ligand mono-SbSe 4 , a bidentate chelating ligand η 2 -SbSe 4 or a tridentate bridging ligand μ-η 1 ,η 2 -SbSe 4 to the lanthanide(III) center depending on the Ln 3+ ions and the mixed ethylene polyamines, indicating the effect of lanthanide contraction on the structures of the lanthanide(III) selenidoantimonates. The lanthanide selenidoantimonates exhibit semiconducting properties with E g between 2.08 and 2.51 eV. - Graphical Abstract: Two structural types of lanthanide(III) selenidoantimonates are formed in both en-dien and en-trien mixed polyamines across lanthanide series, indicating the lanthanide contraction effect on the structures of the lanthanide(III) selenidoantimonates. Highlights: → Two structural types of lanthanide selenidoantimonates are prepared across the lanthanide series in both Ln/Sb/Se/(en+dien) and Ln/Sb/Se/(en+trien) systems. → The [SbSe 4 ] 3- anion acts as a mono-SbSe 4 , a η 2 -SbSe 4 or a μ-η 1 ,η 2 -SbSe 4 ligand to the Ln 3+ ions. → The soft base ligand [SbSe 4 ] 3- can be controlled to coordinate to the Ln 3+ ions with en+dien and en+trien as co-ligands.

Thermoelectric properties of Co4Sb12 with Bi2Te3 nanoinclusions.

Science.gov (United States)

Ghosh, Sanyukta; Bisht, Anuj; Karati, Anirudha; Rogl, Gerda; Rogl, Peter; Murty, B S; Suwas, Satyam; Mallik, Ramesh Chandra

2018-02-12

The figure of merit (zT) of a thermoelectric material can be enhanced by incorporation of nanoinclusions into bulk material. The presence of bismuth telluride (Bi 2 Te 3 ) nanoinclusions in Co 4 Sb 12 leads to lower phonon thermal conductivity by introducing interfaces and defects; it enhances the average zT between 300-700 K. In the current study, Bi 2 Te 3 nanoparticles were dispersed into bulk Co 4 Sb 12 by ball-milling. The bulk was fabricated by spark plasma sintering. The presence of Bi 2 Te 3 dispersion in Co 4 Sb 12 was confirmed by x-ray diffraction, scanning electron microscopy, transmission electron microscopy and electron back scattered diffraction technique. Energy dispersive spectroscopy showed antimony (Sb) as an impurity phase for higher contents of Bi 2 Te 3 in the sample. The Seebeck coefficient (S) and electrical conductivity (σ) were measured in the temperature range of 350-673 K. The negative value of S indicates that most of the charge carriers were electrons. A decrease in S and increase in σ with Bi 2 Te 3 content are due to the increased carrier concentration, as confirmed by Hall measurement. The thermal conductivity, measured between 423-673 K, decreased due to the increased phonon scattering at interfaces. A maximum zT of 0.17 was achieved at 523 K and it did not vary much throughout the temperature range. The experimental results of composites were compared by using effective medium theories.

Thermoelectric properties of Co4Sb12 with Bi2Te3 nanoinclusions.

Science.gov (United States)

Ghosh, Sanyukta; Bisht, Anuj; Karati, Anirudha; Rogl, Gerda; Rogl, Peter F; Murty, B S; Suwas, Satyam; Mallik, Ramesh Chandra

2018-01-08

The figure of merit (zT) of a thermoelectric material can be enhanced by incorporation of nanoinclusions into bulk material. The presence of bismuth telluride (Bi2Te3) nanoinclusions in Co4Sb12 leads to lower phonon thermal conductivity by introducing interfaces and defects; it enhances the average zT between 300-700 K. In the current study, Bi2Te3 nanoparticles were dispersed into bulk Co4Sb12 by ball-milling. The bulk was fabricated by spark plasma sintering (SPS). The presence of Bi2Te3 dispersion in Co4Sb12 was confirmed by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and electron back scattered diffraction (EBSD) technique. Energy dispersive spectroscopy (EDS) showed antimony (Sb) as an impurity phase for higher contents of Bi2Te3 in the sample. The Seebeck coefficient (S) and electrical conductivity () were measured in the temperature range of 350 - 673 K. The negative value of S indicates that most of the charge carriers were electrons. A decrease in S and increase in with Bi2Te3 content are due to the increased carrier concentration, as confirmed by Hall measurement. The thermal conductivity, measured between 423 - 673 K, decreased due to the increased phonon scattering at interfaces. A maximum zT of 0.17 was achieved at 523 K and it did not vary much throughout the temperature range. The experimental results of composites were compared by using effective medium theories. © 2018 IOP Publishing Ltd.

Very smooth FeSb.sub.2./sub.Te and Ce.sub.0.1./sub.Fe.sub.0.7./sub.Co.sub.3.3./sub.Sb.sub.12./sub. layers prepared by modified PLD

Czech Academy of Sciences Publication Activity Database

Remsa, Jan; Jelínek, Miroslav; Kocourek, Tomáš; Zeipl, Radek; Navrátil, Jiří

2016-01-01

Roč. 45, č. 3 (2016), s. 1921-1926 ISSN 0361-5235 R&D Projects: GA ČR(CZ) GA13-33056S Institutional support: RVO:68378271 ; RVO:61389013 Keywords : PLD * RTA * thermoelectric layer * Harman * FeSb 2 Te * Ce 0.1 Fe 0.7 Co 3.3 Sb 12 Subject RIV: BM - Solid Matter Physics ; Magnetism; CD - Macromolecular Chemistry (UMCH-V) Impact factor: 1.579, year: 2016

On the structure, morphology, and optical properties of chemical bath deposited Sb2S3 thin films

International Nuclear Information System (INIS)

Krishnan, B.; Arato, A.; Cardenas, E.; Roy, T.K. Das; Castillo, G.A.

2008-01-01

In the present paper, we have reported the room temperature growth of antimony sulphide (Sb 2 S 3 ) thin films by chemical bath deposition and detailed characterization of these films. The films were deposited from a chemical bath containing SbCl 3 and Na 2 S 2 O 3 at 27 deg. C. We have analysed the structure, morphology, composition and optical properties of as deposited Sb 2 S 3 films as well as those subjected to annealing in nitrogen atmosphere or in air. As-deposited films are amorphous to X-ray diffraction (XRD). However, the diffused rings in the electron diffraction pattern revealed the existence of nanocrystalline grains in these films. XRD analysis showed that upon annealing in nitrogen atmosphere these films transformed into polycrystalline with orthorhombic structure. Also, we have observed that during heating in air, Sb 2 S 3 first converts into orthorhombic form and then further heating results in the formation of Sb 2 O 3 crystallites. Optical bandgap energy of as deposited and annealed films was evaluated from UV-vis absorption spectra. The values obtained were 2.57 and 1.73 eV for the as-deposited and the annealed films respectively

Lower lattice thermal conductivity in SbAs than As or Sb monolayers: a first-principles study.

Science.gov (United States)

Guo, San-Dong; Liu, Jiang-Tao

2017-12-06

Phonon transport in group-VA element (As, Sb and Bi) monolayer semiconductors has been widely investigated in theory, and, of them, monolayer Sb (antimonene) has recently been synthesized. In this work, phonon transport in monolayer SbAs is investigated with a combination of first-principles calculations and the linearized phonon Boltzmann equation. It is found that the lattice thermal conductivity of monolayer SbAs is lower than those of both monolayer As and Sb, and the corresponding sheet thermal conductance is 28.8 W K -1 at room temperature. To understand the lower lattice thermal conductivity in monolayer SbAs than those in monolayer As and Sb, the group velocities and phonon lifetimes of monolayer As, SbAs and Sb are calculated. The calculated results show that the group velocities of monolayer SbAs are between those of monolayer As and Sb, but that the phonon lifetimes of SbAs are smaller than those of both monolayer As and Sb. Hence, the low lattice thermal conductivity in monolayer SbAs is attributed to very small phonon lifetimes. Unexpectedly, the ZA branch has very little contribution to the total thermal conductivity, only 2.4%, which is obviously different from those of monolayer As and Sb with very large contributions. This can be explained by very small phonon lifetimes for the ZA branch of monolayer SbAs. The lower lattice thermal conductivity of monolayer SbAs compared to that of monolayer As or Sb can be understood by the alloying of As (Sb) with Sb (As), which should introduce phonon point defect scattering. We also consider the isotope and size effects on the lattice thermal conductivity. It is found that isotope scattering produces a neglectful effect, and the lattice thermal conductivity with a characteristic length smaller than 30 nm can reach a decrease of about 47%. These results may offer perspectives on tuning the lattice thermal conductivity by the mixture of multiple elements for applications of thermal management and

Exotic topological insulator states and topological phase transitions in Sb2Se3-Bi2Se3 heterostructures

KAUST Repository

Zhang, Qianfan

2012-03-27

Topological insulator is a new state of matter attracting tremendous interest due to its gapless linear dispersion and spin momentum locking topological states located near the surface. Heterostructures, which have traditionally been powerful in controlling the electronic properties of semiconductor devices, are interesting for topological insulators. Here, we studied the spatial distribution of the topological state in Sb 2Se 3-Bi 2Se 3 heterostructures by first-principle simulation and discovered that an exotic topological state exists. Surprisingly, the state migrates from the nontrivial Bi 2Se 3 into the trivial Sb 2Se 3 region and spreads across the entire Sb 2Se 3 slab, extending beyond the concept of "surface" state while preserving all of the topological surface state characteristics. This unusual topological state arises from the coupling between different materials and the modification of electronic structure near Fermi energy. Our study demonstrates that heterostructures can open up opportunities for controlling the real-space distribution of the topological state and inducing quantum phase transitions between topologically trivial and nontrivial states. © 2012 American Chemical Society.

Influence of the exchange and correlation functional on the structure of amorphous InSb and In3SbTe2 compounds

OpenAIRE

Gabardi, Silvia; Caravati, Sebastiano; Los, Jan H; Kühne, Thomas D; Bernasconi, Marco

2016-01-01

We have investigated the structural, vibrational, and electronic properties of the amorphous phase of InSb and In3SbTe2 compounds of interest for applications in phase change non-volatile memories. Models of the amorphous phase have been generated by quenching from the melt by molecular dynamics simulations based on density functional theory. In particular, we have studied the dependence of the structural properties on the choice of the exchange-correlation functional. It turns out that the u...

Si-Sb-Te materials for phase change memory applications

International Nuclear Information System (INIS)

Rao Feng; Song Zhitang; Ren Kun; Zhou Xilin; Cheng Yan; Wu Liangcai; Liu Bo

2011-01-01

Si-Sb-Te materials including Te-rich Si 2 Sb 2 Te 6 and Si x Sb 2 Te 3 with different Si contents have been systemically studied with the aim of finding the most suitable Si-Sb-Te composition for phase change random access memory (PCRAM) use. Si x Sb 2 Te 3 shows better thermal stability than Ge 2 Sb 2 Te 5 or Si 2 Sb 2 Te 6 in that Si x Sb 2 Te 3 does not have serious Te separation under high annealing temperature. As Si content increases, the data retention ability of Si x Sb 2 Te 3 improves. The 10 years retention temperature for Si 3 Sb 2 Te 3 film is ∼ 393 K, which meets the long-term data storage requirements of automotive electronics. In addition, Si richer Si x Sb 2 Te 3 films also show improvement on thickness change upon annealing and adhesion on SiO 2 substrate compared to those of Ge 2 Sb 2 Te 5 or Si 2 Sb 2 Te 6 films. However, the electrical performance of PCRAM cells based on Si x Sb 2 Te 3 films with x > 3.5 becomes worse in terms of stable and long-term operations. Si x Sb 2 Te 3 materials with 3 < x < 3.5 are proved to be suitable for PCRAM use to ensure good overall performance.

Synthesis and structural characterization of bulk Sb2Te3 single crystal

Science.gov (United States)

Sultana, Rabia; Gahtori, Bhasker; Meena, R. S.; Awana, V. P. S.

2018-05-01

We report the growth and characterization of bulk Sb2Te3 single crystal synthesized by the self flux method via solid state reaction route from high temperature melt (850˚C) and slow cooling (2˚C/hour) of constituent elements. The single crystal X-ray diffraction pattern showed the 00l alignment and the high crystalline nature of the resultant sample. The rietveld fitted room temperature powder XRD revealed the phase purity and rhombohedral structure of the synthesized crystal. The formation and analysis of unit cell structure further verified the rhombohedral structure composed of three quintuple layers stacked one over the other. The SEM image showed the layered directional growth of the synthesized crystal carried out using the ZEISS-EVOMA-10 scanning electron microscope The electrical resistivity measurement was carried out using the conventional four-probe method on a quantum design Physical Property Measurement System (PPMS). The temperature dependent electrical resistivity plot for studied Sb2Te3 single crystal depicts metallic behaviour in the absence of any applied magnetic field. The synthesis as well as the structural characterization of as grown Sb2Te3 single crystal is reported and discussed in the present letter.

KFeSbTe3: A quaternary chalcogenide aerogel for preferential adsorption of polarizable hydrocarbons and gases

KAUST Repository

Ahmed, Ejaz

2015-01-01

The first telluride-based quaternary aerogel KFeSbTe3 is synthesized by a sol-gel metathesis reaction between Fe(OAc)2 and K3SbTe3 in dimethyl formamide. The aerogel has an exceptionally large surface area 652 m2 g-1 which is amongst the highest reported for chalcogenide-based aerogels. This predominantly mesoporous material shows preferential adsorption for toluene vapors over cyclohexane or cyclopentane and CO2 over CH4 or H2. The remarkably high adsorption capacity for toluene (9.31 mmol g-1) and high selectivity for gases (CO2/H2: 121 and CO2/CH4: 75) suggest a potential use of such materials in adsorption-based separation processes for the effective purification of hydrocarbons and gases. © The Royal Society of Chemistry 2015.

Influence of the exchange and correlation functional on the structure of amorphous InSb and In3SbTe2 compounds

Science.gov (United States)

Gabardi, Silvia; Caravati, Sebastiano; Los, Jan H.; Kühne, Thomas D.; Bernasconi, Marco

2016-05-01

We have investigated the structural, vibrational, and electronic properties of the amorphous phase of InSb and In3SbTe2 compounds of interest for applications in phase change non-volatile memories. Models of the amorphous phase have been generated by quenching from the melt by molecular dynamics simulations based on density functional theory. In particular, we have studied the dependence of the structural properties on the choice of the exchange-correlation functional. It turns out that the use of the Becke-Lee-Yang-Parr functional provides models with a much larger fraction of In atoms in a tetrahedral bonding geometry with respect to previous results obtained with the most commonly used Perdew-Becke-Ernzerhof functional. This outcome is at odd with the properties of Ge2Sb2Te5 phase change compound for which the two exchange-correlation functionals yield very similar results on the structure of the amorphous phase.

Influence of the exchange and correlation functional on the structure of amorphous InSb and In3SbTe2 compounds

International Nuclear Information System (INIS)

Gabardi, Silvia; Caravati, Sebastiano; Bernasconi, Marco; Los, Jan H.; Kühne, Thomas D.

2016-01-01

We have investigated the structural, vibrational, and electronic properties of the amorphous phase of InSb and In 3 SbTe 2 compounds of interest for applications in phase change non-volatile memories. Models of the amorphous phase have been generated by quenching from the melt by molecular dynamics simulations based on density functional theory. In particular, we have studied the dependence of the structural properties on the choice of the exchange-correlation functional. It turns out that the use of the Becke-Lee-Yang-Parr functional provides models with a much larger fraction of In atoms in a tetrahedral bonding geometry with respect to previous results obtained with the most commonly used Perdew-Becke-Ernzerhof functional. This outcome is at odd with the properties of Ge 2 Sb 2 Te 5 phase change compound for which the two exchange-correlation functionals yield very similar results on the structure of the amorphous phase.

Alternative route for the preparation of CoSb3 and Mg2Si derivatives

International Nuclear Information System (INIS)

Godlewska, E.; Mars, K.; Zawadzka, K.

2012-01-01

An alternative manufacturing route has been developed for cobalt triantimonide and magnesium disilicide derivatives. Elemental powders were mixed in stoichiometric proportions, cold pressed into cylindrical preforms and heated in oxygen-free environment to initiate the exothermic reaction. According to DTA/TG measurements and observations under high-temperature microscope, the onset of reaction occurred at a temperature not exceeding the melting point of the more volatile component, i.e. antimony in the case of CoSb 3 and magnesium in the case of Mg 2 Si. The reaction products were additionally heat treated to secure homogenization. Dense sinters were obtained by hot uniaxial pressing of the obtained powders in moderate temperature-and-pressure conditions. Several advantages were identified in the proposed technology: absence of liquid phases, relatively short time of the synthesis, possibility of in-situ or ex-situ doping and grain size control. - Graphical abstract: (1) Manufacturing flow sheet for CoSb 3 (milling included) and Mg 2 Si (no milling). (2) Micrographs of CoSb 3 product. (3) Micrographs of Mg 2 Si product. Highlights: ► The combustion synthesis followed by HP was used for the manufacturing of CoSb 3 or Mg 2 Si. ► The time of reaction is shorter compared with many other synthesis methods. ► The process is scalable and practically wasteless.