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Sample records for floating gate memory

  1. Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China)

    2014-10-20

    High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

  2. Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

    International Nuclear Information System (INIS)

    Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong

    2014-01-01

    High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

  3. Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory

    International Nuclear Information System (INIS)

    Han, Jinhua; Wang, Wei; Ying, Jun; Xie, Wenfa

    2014-01-01

    An ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory was demonstrated, with discrete distributed gold nanoparticles, tetratetracontane (TTC), pentacene as the floating-gate layer, tunneling layer, and active layer, respectively. The electron traps at the TTC/pentacene interface were significantly suppressed, which resulted in an ambipolar operation in present memory. As both electrons and holes were supplied in the channel and trapped in the floating-gate by programming/erasing operations, respectively, i.e., one type of charge carriers was used to overwrite the other, trapped, one, a large memory window, extending on both sides of the initial threshold voltage, was realized

  4. Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory

    Energy Technology Data Exchange (ETDEWEB)

    Han, Jinhua; Wang, Wei, E-mail: wwei99@jlu.edu.cn; Ying, Jun; Xie, Wenfa [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)

    2014-01-06

    An ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory was demonstrated, with discrete distributed gold nanoparticles, tetratetracontane (TTC), pentacene as the floating-gate layer, tunneling layer, and active layer, respectively. The electron traps at the TTC/pentacene interface were significantly suppressed, which resulted in an ambipolar operation in present memory. As both electrons and holes were supplied in the channel and trapped in the floating-gate by programming/erasing operations, respectively, i.e., one type of charge carriers was used to overwrite the other, trapped, one, a large memory window, extending on both sides of the initial threshold voltage, was realized.

  5. Ultra Low Voltage Class AB Switched Current Memory Cells Based on Floating Gate Transistors

    DEFF Research Database (Denmark)

    Mucha, Igor

    1999-01-01

    current memory cells were designed using a CMOS process with threshold voltages V-T0n = \\V-T0p\\ = 0.9 V for the n- and p-channel devices. Both hand calculations and PSPICE simulations showed that the designed example switched current memory cell allowed a maximum signal range better than +/-18 mu......A proposal for a class AB switched current memory cell, suitable for ultra-low-voltage applications is presented. The proposal employs transistors with floating gates, allowing to build analog building blocks for ultralow supply voltage operation also in CMOS processes with high threshold voltages....... This paper presents the theoretical basis for the design of "floating-gate'' switched current memory cells by giving a detailed description and analysis of the most important impacts degrading the performance of the cells. To support the theoretical assumptions circuits based on "floating-gate'' switched...

  6. VHDL-based programming environment for Floating-Gate analog memory cell

    Directory of Open Access Journals (Sweden)

    Carlos Alberto dos Reis Filho

    2005-02-01

    Full Text Available An implementation in CMOS technology of a Floating-Gate Analog Memory Cell and Programming Environment is presented. A digital closed-loop control compares a reference value set by user and the memory output and after cycling, the memory output is updated and the new value stored. The circuit can be used as analog trimming for VLSI applications where mechanical trimming associated with postprocessing chip is prohibitive due to high costs.

  7. Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate

    International Nuclear Information System (INIS)

    Che, Yongli; Zhang, Yating; Song, Xiaoxian; Cao, Mingxuan; Zhang, Guizhong; Yao, Jianquan; Cao, Xiaolong; Dai, Haitao; Yang, Junbo

    2016-01-01

    Using only solution processing methods, we developed ambipolar quantum-dot (QD) transistor floating-gate memory (FGM) that uses Au nanoparticles as a floating gate. Because of the bipolarity of the active channel of PbSe QDs, the memory could easily trap holes or electrons in the floating gate by programming/erasing (P/E) operations, which could shift the threshold voltage both up and down. As a result, the memory exhibited good programmable memory characteristics: a large memory window (ΔV th  ∼ 15 V) and a long retention time (>10 5  s). The magnitude of ΔV th depended on both P/E voltages and the bias voltage (V DS ): ΔV th was a cubic function to V P/E and linearly depended on V DS . Therefore, this FGM based on a QD transistor is a promising alternative to its inorganic counterparts owing to its advantages of bipolarity, high mobility, low cost, and large-area production.

  8. Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate

    Energy Technology Data Exchange (ETDEWEB)

    Che, Yongli; Zhang, Yating, E-mail: yating@tju.edu.cn; Song, Xiaoxian; Cao, Mingxuan; Zhang, Guizhong; Yao, Jianquan [Institute of Laser and Opto-Electronics, College of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072 (China); Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, Tianjin University, Tianjin 300072 (China); Cao, Xiaolong [Institute of Laser and Opto-Electronics, College of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072 (China); Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, Tianjin University, Tianjin 300072 (China); College of Mechanical and Electronic Engineering, Shandong University of Science and Technology, Qingdao 266590 (China); Dai, Haitao [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Yang, Junbo [Center of Material Science, National University of Defense Technology, Changsha 410073 (China)

    2016-07-04

    Using only solution processing methods, we developed ambipolar quantum-dot (QD) transistor floating-gate memory (FGM) that uses Au nanoparticles as a floating gate. Because of the bipolarity of the active channel of PbSe QDs, the memory could easily trap holes or electrons in the floating gate by programming/erasing (P/E) operations, which could shift the threshold voltage both up and down. As a result, the memory exhibited good programmable memory characteristics: a large memory window (ΔV{sub th} ∼ 15 V) and a long retention time (>10{sup 5 }s). The magnitude of ΔV{sub th} depended on both P/E voltages and the bias voltage (V{sub DS}): ΔV{sub th} was a cubic function to V{sub P/E} and linearly depended on V{sub DS}. Therefore, this FGM based on a QD transistor is a promising alternative to its inorganic counterparts owing to its advantages of bipolarity, high mobility, low cost, and large-area production.

  9. Physical implication of transition voltage in organic nano-floating-gate nonvolatile memories

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Shun; Gao, Xu, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn; Zhong, Ya-Nan; Zhang, Zhong-Da; Xu, Jian-Long; Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu 215123 (China)

    2016-07-11

    High-performance pentacene-based organic field-effect transistor nonvolatile memories, using polystyrene as a tunneling dielectric and Au nanoparticles as a nano-floating-gate, show parallelogram-like transfer characteristics with a featured transition point. The transition voltage at the transition point corresponds to a threshold electric field in the tunneling dielectric, over which stored electrons in the nano-floating-gate will start to leak out. The transition voltage can be modulated depending on the bias configuration and device structure. For p-type active layers, optimized transition voltage should be on the negative side of but close to the reading voltage, which can simultaneously achieve a high ON/OFF ratio and good memory retention.

  10. Optimization of pentacene double floating gate memories based on charge injection regulated by SAM functionalization

    Directory of Open Access Journals (Sweden)

    S. Li

    2018-02-01

    Full Text Available Pentacene based double nano-floating gate memories (NFGM by using gold nanoparticles (Au NPs and reduced graphene oxide (rGO sheets as charge trapping layers are prepared and demonstrated. Particularly, the NFGM chemically treated by 2,3,4,5,6-pentafluorobenzenethiol (PFBT self-assembled monolayers (SAM exhibits excellent memory performances, including high mobility of 0.23 cm2V-1s-1, the large memory window of 51 V, and the stable retention property more than 108 s. Comparing the performances of NFGM without treating with PFBT SAM, the improving performances of the memory devices by SAM modification are explained by the increase of charge injection, which could be further investigated by XPS and UPS. In particular, the results highlight the utility of SAM modulations and controlling of charge transport in the development of organic transistor memories.

  11. Optimization of pentacene double floating gate memories based on charge injection regulated by SAM functionalization

    Science.gov (United States)

    Li, S.; Guérin, D.; Lenfant, S.; Lmimouni, K.

    2018-02-01

    Pentacene based double nano-floating gate memories (NFGM) by using gold nanoparticles (Au NPs) and reduced graphene oxide (rGO) sheets as charge trapping layers are prepared and demonstrated. Particularly, the NFGM chemically treated by 2,3,4,5,6-pentafluorobenzenethiol (PFBT) self-assembled monolayers (SAM) exhibits excellent memory performances, including high mobility of 0.23 cm2V-1s-1, the large memory window of 51 V, and the stable retention property more than 108 s. Comparing the performances of NFGM without treating with PFBT SAM, the improving performances of the memory devices by SAM modification are explained by the increase of charge injection, which could be further investigated by XPS and UPS. In particular, the results highlight the utility of SAM modulations and controlling of charge transport in the development of organic transistor memories.

  12. Non-volatile flash memory with discrete bionanodot floating gate assembled by protein template

    International Nuclear Information System (INIS)

    Miura, Atsushi; Yamashita, Ichiro; Uraoka, Yukiharu; Fuyuki, Takashi; Tsukamoto, Rikako; Yoshii, Shigeo

    2008-01-01

    We demonstrated non-volatile flash memory fabrication by utilizing uniformly sized cobalt oxide (Co 3 O 4 ) bionanodot (Co-BND) architecture assembled by a cage-shaped supramolecular protein template. A fabricated high-density Co-BND array was buried in a metal-oxide-semiconductor field-effect-transistor (MOSFET) structure to use as the charge storage node of a floating nanodot gate memory. We observed a clockwise hysteresis in the drain current-gate voltage characteristics of fabricated BND-embedded MOSFETs. Observed hysteresis obviously indicates a memory operation of Co-BND-embedded MOSFETs due to the charge confinement in the embedded BND and successful functioning of embedded BNDs as the charge storage nodes of the non-volatile flash memory. Fabricated Co-BND-embedded MOSFETs showed good memory properties such as wide memory windows, long charge retention and high tolerance to repeated write/erase operations. A new pathway for device fabrication by utilizing the versatile functionality of biomolecules is presented

  13. A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications.

    Science.gov (United States)

    Liu, Chunsen; Yan, Xiao; Song, Xiongfei; Ding, Shijin; Zhang, David Wei; Zhou, Peng

    2018-04-09

    As conventional circuits based on field-effect transistors are approaching their physical limits due to quantum phenomena, semi-floating gate transistors have emerged as an alternative ultrafast and silicon-compatible technology. Here, we show a quasi-non-volatile memory featuring a semi-floating gate architecture with band-engineered van der Waals heterostructures. This two-dimensional semi-floating gate memory demonstrates 156 times longer refresh time with respect to that of dynamic random access memory and ultrahigh-speed writing operations on nanosecond timescales. The semi-floating gate architecture greatly enhances the writing operation performance and is approximately 10 6 times faster than other memories based on two-dimensional materials. The demonstrated characteristics suggest that the quasi-non-volatile memory has the potential to bridge the gap between volatile and non-volatile memory technologies and decrease the power consumption required for frequent refresh operations, enabling a high-speed and low-power random access memory.

  14. Low-voltage high-speed programming gate-all-around floating gate memory cell with tunnel barrier engineering

    Science.gov (United States)

    Hamzah, Afiq; Ezaila Alias, N.; Ismail, Razali

    2018-06-01

    The aim of this study is to investigate the memory performances of gate-all-around floating gate (GAA-FG) memory cell implementing engineered tunnel barrier concept of variable oxide thickness (VARIOT) of low-k/high-k for several high-k (i.e., Si3N4, Al2O3, HfO2, and ZrO2) with low-k SiO2 using three-dimensional (3D) simulator Silvaco ATLAS. The simulation work is conducted by initially determining the optimized thickness of low-k/high-k barrier-stacked and extracting their Fowler–Nordheim (FN) coefficients. Based on the optimized parameters the device performances of GAA-FG for fast program operation and data retention are assessed using benchmark set by 6 and 8 nm SiO2 tunnel layer respectively. The programming speed has been improved and wide memory window with 30% increment from conventional SiO2 has been obtained using SiO2/Al2O3 tunnel layer due to its thin low-k dielectric thickness. Furthermore, given its high band edges only 1% of charge-loss is expected after 10 years of ‑3.6/3.6 V gate stress.

  15. Suppressing the memory state of floating gate transistors with repeated femtosecond laser backside irradiations

    Science.gov (United States)

    Chambonneau, Maxime; Souiki-Figuigui, Sarra; Chiquet, Philippe; Della Marca, Vincenzo; Postel-Pellerin, Jérémy; Canet, Pierre; Portal, Jean-Michel; Grojo, David

    2017-04-01

    We demonstrate that infrared femtosecond laser pulses with intensity above the two-photon ionization threshold of crystalline silicon induce charge transport through the tunnel oxide in floating gate Metal-Oxide-Semiconductor transistor devices. With repeated irradiations of Flash memory cells, we show how the laser-produced free-electrons naturally redistribute on both sides of the tunnel oxide until the electric field of the transistor is suppressed. This ability enables us to determine in a nondestructive, rapid and contactless way the flat band and the neutral threshold voltages of the tested device. The physical mechanisms including nonlinear ionization, quantum tunneling of free-carriers, and flattening of the band diagram are discussed for interpreting the experiments. The possibility to control the carriers in memory transistors with ultrashort pulses holds promises for fast and remote device analyses (reliability, security, and defectivity) and for considerable developments in the growing field of ultrafast microelectronics.

  16. ZnO nanowire-based nano-floating gate memory with Pt nanocrystals embedded in Al{sub 2}O{sub 3} gate oxides

    Energy Technology Data Exchange (ETDEWEB)

    Yeom, Donghyuk; Kang, Jeongmin; Lee, Myoungwon; Jang, Jaewon; Yun, Junggwon; Jeong, Dong-Young; Yoon, Changjoon; Koo, Jamin; Kim, Sangsig [Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701 (Korea, Republic of)], E-mail: sangsig@korea.ac.kr

    2008-10-01

    The memory characteristics of ZnO nanowire-based nano-floating gate memory (NFGM) with Pt nanocrystals acting as the floating gate nodes were investigated in this work. Pt nanocrystals were embedded between Al{sub 2}O{sub 3} tunneling and control oxide layers deposited on ZnO nanowire channels. For a representative ZnO nanowire-based NFGM with embedded Pt nanocrystals, a threshold voltage shift of 3.8 V was observed in its drain current versus gate voltage (I{sub DS}-V{sub GS}) measurements for a double sweep of the gate voltage, revealing that the deep effective potential wells built into the nanocrystals provide our NFGM with a large charge storage capacity. Details of the charge storage effect observed in this memory device are discussed in this paper.

  17. ZnO nanowire-based nano-floating gate memory with Pt nanocrystals embedded in Al2O3 gate oxides

    International Nuclear Information System (INIS)

    Yeom, Donghyuk; Kang, Jeongmin; Lee, Myoungwon; Jang, Jaewon; Yun, Junggwon; Jeong, Dong-Young; Yoon, Changjoon; Koo, Jamin; Kim, Sangsig

    2008-01-01

    The memory characteristics of ZnO nanowire-based nano-floating gate memory (NFGM) with Pt nanocrystals acting as the floating gate nodes were investigated in this work. Pt nanocrystals were embedded between Al 2 O 3 tunneling and control oxide layers deposited on ZnO nanowire channels. For a representative ZnO nanowire-based NFGM with embedded Pt nanocrystals, a threshold voltage shift of 3.8 V was observed in its drain current versus gate voltage (I DS -V GS ) measurements for a double sweep of the gate voltage, revealing that the deep effective potential wells built into the nanocrystals provide our NFGM with a large charge storage capacity. Details of the charge storage effect observed in this memory device are discussed in this paper

  18. Effect of tunneling layers on the performances of floating-gate based organic thin-film transistor nonvolatile memories

    International Nuclear Information System (INIS)

    Wang, Wei; Han, Jinhua; Ying, Jun; Xiang, Lanyi; Xie, Wenfa

    2014-01-01

    Two types of floating-gate based organic thin-film transistor nonvolatile memories (FG-OTFT-NVMs) were demonstrated, with poly(methyl methacrylate co glycidyl methacrylate) (P(MMA-GMA)) and tetratetracontane (TTC) as the tunneling layer, respectively. Their device performances were measured and compared. In the memory with a P(MMA-GMA) tunneling layer, typical unipolar hole transport was obtained with a relatively small mobility of 0.16 cm 2 /V s. The unidirectional shift of turn-on voltage (V on ) due to only holes trapped/detrapped in/from the floating gate resulted in a small memory window of 12.5 V at programming/erasing voltages (V P /V E ) of ±100 V and a nonzero reading voltage. Benefited from the well-ordered molecule orientation and the trap-free surface of TTC layer, a considerably high hole mobility of 1.7 cm 2 /V s and a visible feature of electrons accumulated in channel and trapped in floating-gate were achieved in the memory with a TTC tunneling layer. High hole mobility resulted in a high on current and a large memory on/off ratio of 600 at the V P /V E of ±100 V. Both holes and electrons were injected into floating-gate and overwritten each other, which resulted in a bidirectional V on shift. As a result, an enlarged memory window of 28.6 V at the V P /V E of ±100 V and a zero reading voltage were achieved. Based on our results, a strategy is proposed to optimize FG-OTFT-NVMs by choosing a right tunneling layer to improve the majority carrier mobility and realize ambipolar carriers injecting and trapping in the floating-gate.

  19. Effect of tunneling layers on the performances of floating-gate based organic thin-film transistor nonvolatile memories

    Science.gov (United States)

    Wang, Wei; Han, Jinhua; Ying, Jun; Xiang, Lanyi; Xie, Wenfa

    2014-09-01

    Two types of floating-gate based organic thin-film transistor nonvolatile memories (FG-OTFT-NVMs) were demonstrated, with poly(methyl methacrylate co glycidyl methacrylate) (P(MMA-GMA)) and tetratetracontane (TTC) as the tunneling layer, respectively. Their device performances were measured and compared. In the memory with a P(MMA-GMA) tunneling layer, typical unipolar hole transport was obtained with a relatively small mobility of 0.16 cm2/V s. The unidirectional shift of turn-on voltage (Von) due to only holes trapped/detrapped in/from the floating gate resulted in a small memory window of 12.5 V at programming/erasing voltages (VP/VE) of ±100 V and a nonzero reading voltage. Benefited from the well-ordered molecule orientation and the trap-free surface of TTC layer, a considerably high hole mobility of 1.7 cm2/V s and a visible feature of electrons accumulated in channel and trapped in floating-gate were achieved in the memory with a TTC tunneling layer. High hole mobility resulted in a high on current and a large memory on/off ratio of 600 at the VP/VE of ±100 V. Both holes and electrons were injected into floating-gate and overwritten each other, which resulted in a bidirectional Von shift. As a result, an enlarged memory window of 28.6 V at the VP/VE of ±100 V and a zero reading voltage were achieved. Based on our results, a strategy is proposed to optimize FG-OTFT-NVMs by choosing a right tunneling layer to improve the majority carrier mobility and realize ambipolar carriers injecting and trapping in the floating-gate.

  20. The floating-gate non-volatile semiconductor memory--from invention to the digital age.

    Science.gov (United States)

    Sze, S M

    2012-10-01

    In the past 45 years (from 1967 to 2012), the non-volatile semiconductor memory (NVSM) has emerged from a floating-gate concept to the prime technology driver of the largest industry in the world-the electronics industry. In this paper, we briefly review the historical development of NVSM and project its future trends to the year 2020. In addition, we consider NVSM's wide-range of applications from the digital cellular phone to tablet computer to digital television. As the device dimension is scaled down to the deca-nanometer regime, we expect that many innovations will be made to meet the scaling challenges, and NVSM-inspired technology will continue to enrich and improve our lives for decades to come.

  1. Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO2

    Science.gov (United States)

    Palade, C.; Lepadatu, A. M.; Slav, A.; Lazanu, S.; Teodorescu, V. S.; Stoica, T.; Ciurea, M. L.

    2018-01-01

    Trilayer memory capacitors with Ge nanocrystals (NCs) floating gate in HfO2 were obtained by magnetron sputtering deposition on p-type Si substrate followed by rapid thermal annealing at relatively low temperature of 600 °C. The frequency dispersion of capacitance and resistance was measured in accumulation regime of Al/HfO2 gate oxide/Ge NCs in HfO2 floating gate/HfO2 tunnel oxide/SiOx/p-Si/Al memory capacitors. For simulation of the frequency dispersion a complex circuit model was used considering an equivalent parallel RC circuit for each layer of the trilayer structure. A series resistance due to metallic contacts and Si substrate was necessary to be included in the model. A very good fit to the experimental data was obtained and the parameters of each layer in the memory capacitor, i.e. capacitances and resistances were determined and in turn the intrinsic material parameters, i.e. dielectric constants and resistivities of layers were evaluated. The results are very important for the study and optimization of the hysteresis behaviour of floating gate memories based on NCs embedded in oxide.

  2. Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

    Energy Technology Data Exchange (ETDEWEB)

    Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin, E-mail: wangsd@suda.edu.cn, E-mail: chilf@suda.edu.cn, E-mail: bdong@suda.edu.cn; Chi, Li-Feng, E-mail: wangsd@suda.edu.cn, E-mail: chilf@suda.edu.cn, E-mail: bdong@suda.edu.cn; Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn, E-mail: chilf@suda.edu.cn, E-mail: bdong@suda.edu.cn [Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China)

    2015-03-23

    Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process.

  3. Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

    International Nuclear Information System (INIS)

    Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin; Chi, Li-Feng; Wang, Sui-Dong

    2015-01-01

    Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process

  4. Al2O3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application

    International Nuclear Information System (INIS)

    Yuan, C L; Chan, M Y; Lee, P S; Darmawan, P; Setiawan, Y

    2007-01-01

    The integration of nanoparticles has high potential in technological applications and opens up possibilities of the development of new devices. Compared to the conventional floating gate memory, a structure containing nanocrystals embedded in dielectrics shows high potential to produce a memory with high endurance, low operating voltage, fast write-erase speeds and better immunity to soft errors [S. Tiwari, F. Rana, H. Hanafi et al. 1996 Appl.Phys. Lett. 68, 1377]. A significant improvement on data retention [J. J. Lee, X. Wang et al. 2003 Proceedings of the VLSI Technol. Symposium, p33] can be observed when discrete nanodots are used instead of continuous floating gate as charge storage nodes because local defect related leakage can be reduced efficiently. Furthermore, using a high-k dielectric in place of the conventional SiO2 based dielectric, nanodots flash memory is able to achieve significantly improved programming efficiency and data retention [A. Thean and J. -P. Leburton, 2002 IEEE Potentials 21, 35; D. W. Kim, T. Kim and S. K. Banerjee, 2003 IEEE Trans. Electron Devices 50, 1823]. We have recently successfully developed a method to produce nanodots embedded in high-k gate dielectrics [C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Electrochemical and Solid-State Letters 9, F53; C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Europhys. Lett. 74, 177]. In this paper, we fabricated the memory structure of Al 2 O 3 nanocrystals embedded in amorphous Lu 2 O 3 high k dielectric using pulsed laser ablation. The mean size and density of the Al 2 O 3 nanocrystals are estimated to be about 5 nm and 7x1011 cm -2 , respectively. Good electrical performances in terms of large memory window and good data retention were observed. Our preparation method is simple, fast and economical

  5. Nonvolatile Memories Using Quantum Dot (QD) Floating Gates Assembled on II-VI Tunnel Insulators

    Science.gov (United States)

    Suarez, E.; Gogna, M.; Al-Amoody, F.; Karmakar, S.; Ayers, J.; Heller, E.; Jain, F.

    2010-07-01

    This paper presents preliminary data on quantum dot gate nonvolatile memories using nearly lattice-matched ZnS/Zn0.95Mg0.05S/ZnS tunnel insulators. The GeO x -cladded Ge and SiO x -cladded Si quantum dots (QDs) are self-assembled site-specifically on the II-VI insulator grown epitaxially over the Si channel (formed between the source and drain region). The pseudomorphic II-VI stack serves both as a tunnel insulator and a high- κ dielectric. The effect of Mg incorporation in ZnMgS is also investigated. For the control gate insulator, we have used Si3N4 and SiO2 layers grown by plasma- enhanced chemical vapor deposition.

  6. Floating-Gate Manipulated Graphene-Black Phosphorus Heterojunction for Nonvolatile Ambipolar Schottky Junction Memories, Memory Inverter Circuits, and Logic Rectifiers.

    Science.gov (United States)

    Li, Dong; Chen, Mingyuan; Zong, Qijun; Zhang, Zengxing

    2017-10-11

    The Schottky junction is an important unit in electronics and optoelectronics. However, its properties greatly degrade with device miniaturization. The fast development of circuits has fueled a rapid growth in the study of two-dimensional (2D) crystals, which may lead to breakthroughs in the semiconductor industry. Here we report a floating-gate manipulated nonvolatile ambipolar Schottky junction memory from stacked all-2D layers of graphene-BP/h-BN/graphene (BP, black phosphorus; h-BN, hexagonal boron nitride) in a designed floating-gate field-effect Schottky barrier transistor configuration. By manipulating the voltage pulse applied to the control gate, the device exhibits ambipolar characteristics and can be tuned to act as graphene-p-BP or graphene-n-BP junctions with reverse rectification behavior. Moreover, the junction exhibits good storability properties of more than 10 years and is also programmable. On the basis of these characteristics, we further demonstrate the application of the device to dual-mode nonvolatile Schottky junction memories, memory inverter circuits, and logic rectifiers.

  7. P-channel differential multiple-time programmable memory cells by laterally coupled floating metal gate fin field-effect transistors

    Science.gov (United States)

    Wang, Tai-Min; Chien, Wei-Yu; Hsu, Chia-Ling; Lin, Chrong Jung; King, Ya-Chin

    2018-04-01

    In this paper, we present a new differential p-channel multiple-time programmable (MTP) memory cell that is fully compatible with advanced 16 nm CMOS fin field-effect transistors (FinFET) logic processes. This differential MTP cell stores complementary data in floating gates coupled by a slot contact structure, which make different read currents possible on a single cell. In nanoscale CMOS FinFET logic processes, the gate dielectric layer becomes too thin to retain charges inside floating gates for nonvolatile data storage. By using a differential architecture, the sensing window of the cell can be extended and maintained by an advanced blanket boost scheme. The charge retention problem in floating gate cells can be improved by periodic restoring lost charges when significant read window narrowing occurs. In addition to high programming efficiency, this p-channel MTP cells also exhibit good cycling endurance as well as disturbance immunity. The blanket boost scheme can remedy the charge loss problem under thin gate dielectrics.

  8. Ionizing radiation effects on floating gates

    International Nuclear Information System (INIS)

    Cellere, G.; Paccagnella, A.; Visconti, A.; Bonanomi, M.

    2004-01-01

    Floating gate (FG) memories, and in particular Flash, are the dominant among modern nonvolatile memory technologies. Their performance under ionizing radiation was traditionally studied for the use in space, but has become of general interest in recent years. We are showing results on the charge loss from programmed FG arrays after 10 keV x-rays exposure. Exposure to ionizing radiation results in progressive discharge of the FG. More advanced devices, featuring smaller FG, are less sensitive to ionizing radiation that older ones. The reason is identified in the photoemission of electrons from FG, since at high doses it dominates over charge loss deriving from electron/hole pairs generation in the oxides

  9. Experimental study on gamma irradiation effects of floating gate ROMs The ROM is stated for Read-only Memory

    CERN Document Server

    He Chao Hui; Chen Xiao Hua; Wang Yan Ping; Peng Hong Lun

    2002-01-01

    Experimental results of gamma irradiation effects are given for Floating gate ROMs. There is an accumulated dose threshold. Errors occur when accumulated dose is above the threshold, no error occurs when below the threshold. The errors go up with the increase of the accumulated dose. Errors occur in devices that are measured during irradiation and irradiated in power on, moreover, new data cannot be written in these devices with programmer. However, under more accumulated dose, there is no error in devices in power off mode and new data can be written in these devices with programmer

  10. Non-volatile nano-floating gate memory with Pt-Fe{sub 2}O{sub 3} composite nanoparticles and indium gallium zinc oxide channel

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Quanli [Myongji University, Department of Nano Science and Engineering (Korea, Republic of); Lee, Seung Chang; Baek, Yoon-Jae [Myongji University, Department of Materials Science and Engineering (Korea, Republic of); Lee, Hyun Ho [Myongji University, Department of Chemical Engineering (Korea, Republic of); Kang, Chi Jung [Myongji University, Department of Nano Science and Engineering (Korea, Republic of); Kim, Hyun-Mi; Kim, Ki-Bum [Seoul National University, Department of Materials Science and Engineering (Korea, Republic of); Yoon, Tae-Sik, E-mail: tsyoon@mju.ac.kr [Myongji University, Department of Nano Science and Engineering (Korea, Republic of)

    2013-02-15

    Non-volatile nano-floating gate memory characteristics with colloidal Pt-Fe{sub 2}O{sub 3} composite nanoparticles with a mostly core-shell structure and indium gallium zinc oxide channel layer were investigated. The Pt-Fe{sub 2}O{sub 3} nanoparticles were chemically synthesized through the preferential oxidation of Fe and subsequent pileup of Pt into the core in the colloidal solution. The uniformly assembled nanoparticles' layer could be formed with a density of {approx}3 Multiplication-Sign 10{sup 11} cm{sup -2} by a solution-based dip-coating process. The Pt core ({approx}3 nm in diameter) and Fe{sub 2}O{sub 3}-shell ({approx}6 nm in thickness) played the roles of the charge storage node and tunneling barrier, respectively. The device exhibited the hysteresis in current-voltage measurement with a threshold voltage shift of {approx}4.76 V by gate voltage sweeping to +30 V. It also showed the threshold shift of {approx}0.66 V after pulse programming at +20 V for 1 s with retention > {approx}65 % after 10{sup 4} s. These results demonstrate the feasibility of using colloidal nanoparticles with core-shell structure as gate stacks of the charge storage node and tunneling dielectric for low-temperature and solution-based processed non-volatile memory devices.

  11. Floating Gate CMOS Dosimeter With Frequency Output

    Science.gov (United States)

    Garcia-Moreno, E.; Isern, E.; Roca, M.; Picos, R.; Font, J.; Cesari, J.; Pineda, A.

    2012-04-01

    This paper presents a gamma radiation dosimeter based on a floating gate sensor. The sensor is coupled with a signal processing circuitry, which furnishes a square wave output signal, the frequency of which depends on the total dose. Like any other floating gate dosimeter, it exhibits zero bias operation and reprogramming capabilities. The dosimeter has been designed in a standard 0.6 m CMOS technology. The whole dosimeter occupies a silicon area of 450 m250 m. The initial sensitivity to a radiation dose is Hz/rad, and to temperature and supply voltage is kHz/°C and 0.067 kHz/mV, respectively. The lowest detectable dose is less than 1 rad.

  12. New fabrication technique using side-wall-type plasma-enhanced chemical-vapor deposition for a floating gate memory with a Si nanodot

    Energy Technology Data Exchange (ETDEWEB)

    Ichikawa, Kazunori; Punchaipetch, Prakaipetch; Yano, Hiroshi; Hatayama, Tomoaki; Uraoka, Yukiharu; Fuyuki, Takashi [Nara Institute of Science and Techonology, Ikoma, Nara (Japan); Tomyo, Atsushi; Takahashi, Eiji; Hayashi, Tsukasa; Ogata, Kiyoshi [Nissin Electric Co., Ltd., Kyoto (Japan)

    2006-08-15

    We have used side-wall-type plasma-enhanced chemical-vapor deposition (PECVD)to fabricate a floating gate memory using a Si nano-crystal dot on thermal SiO{sub 2} at a low temperature of 430 .deg. C. Atomic and radical hydrogen plays an important role in the low-temperature formation of the dot. Transmission electron microscopy (TEM) and atomic force microscopy (AFM) analyses revealed that the average dot size and density were approximately 5 nm and 8.5 X 10{sup 11} cm{sup -2}, respectively. The electronic properties were investigated with metal-oxide-semiconductor-field-effect transistors (MOSFETs) by embedding the nanocrystal dots into SiO{sub 2} fabricated using CVD. Electron charging and discharging were clearly confirmed at room temperature by the transient behavior of the capacitance and the transfer curve. The number of electrons confined in a single dot was approximately one. Furthermore, we evaluated the electronic behavior by varying the bias condition or the operating temperature. The critical charge density could be confirmed to be independent of the injection condition.

  13. MBE-grown Si and Si1−xGex quantum dots embedded within epitaxial Gd2O3 on Si(111) substrate for floating gate memory device

    International Nuclear Information System (INIS)

    Manna, S; Aluguri, R; Katiyar, A; Ray, S K; Das, S; Laha, A; Osten, H J

    2013-01-01

    Si and Si 1−x Ge x quantum dots embedded within epitaxial Gd 2 O 3 grown by molecular beam epitaxy have been studied for application in floating gate memory devices. The effect of interface traps and the role of quantum dots on the memory properties have been studied using frequency-dependent capacitance–voltage and conductance–voltage measurements. Multilayer quantum dot memory comprising four and five layers of Si quantum dots exhibits a superior memory window to that of single-layer quantum dot memory devices. It has also been observed that single-layer Si 1−x Ge x quantum dots show better memory characteristics than single-layer Si quantum dots. (paper)

  14. A Method for Estimating the Probability of Floating Gate Prompt Charge Loss in a Radiation Environment

    Science.gov (United States)

    Edmonds, L. D.

    2016-01-01

    Since advancing technology has been producing smaller structures in electronic circuits, the floating gates in modern flash memories are becoming susceptible to prompt charge loss from ionizing radiation environments found in space. A method for estimating the risk of a charge-loss event is given.

  15. Experimental study on x-rays dose enhancement effects for floating gate ROMs

    CERN Document Server

    Guo Hong Xia; Chen Yu Sheng; Han Fu Bin; He Chao Hui; Zhao Hui

    2002-01-01

    Experimental results of x-ray dose enhancement effects are given for floating gate read-only memory (ROMs) irradiated in the Beijing Synchrotron Radiation Facility. The wrong byte numbers vs. total irradiation dose have been tested and the equivalent relation of total dose damage is provided compared the response of devices irradiated with sup 6 sup 0 Co gamma-ray source. The x-ray dose enhancement factors for floating gate ROMs are obtained firstly in China. These results can be an effective evaluation data for x-rays radiation hardening technology

  16. Transparent nanoscale floating gate memory using self-assembled bismuth nanocrystals in Bi(2) Mg(2/3) Nb(4/3) O(7) (BMN) pyrochlore thin films grown at room temperature.

    Science.gov (United States)

    Jung, Hyun-June; Yoon, Soon-Gil; Hong, Soon-Ku; Lee, Jeong-Yong

    2012-07-03

    Bismuth nanocrystals for a nanoscale floating gate memory device are self-assembled in Bi(2) Mg(2/3) Nb(4/3) O(7) (BMN) dielectric films grown at room temperature by radio-frequency sputtering. The TEM cross-sectional image shows the "real" structure grown on a Si (001) substrate. The image magnified from the dotted box (red color) in the the cross-sectional image clearly shows bismuth nanoparticles at the interface between the Al(2) O(3) and HfO(2) layer (right image). Nanoparticles approximately 3 nm in size are regularly distributed at the interface. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Modeling and simulation of floating gate nanocrystal FET devices and circuits

    Science.gov (United States)

    Hasaneen, El-Sayed A. M.

    The nonvolatile memory market has been growing very fast during the last decade, especially for mobile communication systems. The Semiconductor Industry Association International Technology Roadmap for Semiconductors states that the difficult challenge for nonvolatile semiconductor memories is to achieve reliable, low power, low voltage performance and high-speed write/erase. This can be achieved by aggressive scaling of the nonvolatile memory cells. Unfortunately, scaling down of conventional nonvolatile memory will further degrade the retention time due to the charge loss between the floating gate and drain/source contacts and substrate which makes conventional nonvolatile memory unattractive. Using nanocrystals as charge storage sites reduces dramatically the charge leakage through oxide defects and drain/source contacts. Floating gate nanocrystal nonvolatile memory, FG-NCNVM, is a candidate for future memory because it is advantageous in terms of high-speed write/erase, small size, good scalability, low-voltage, low-power applications, and the capability to store multiple bits per cell. Many studies regarding FG-NCNVMs have been published. Most of them have dealt with fabrication improvements of the devices and device characterizations. Due to the promising FG-NCNVM applications in integrated circuits, there is a need for circuit a simulation model to simulate the electrical characteristics of the floating gate devices. In this thesis, a FG-NCNVM circuit simulation model has been proposed. It is based on the SPICE BSIM simulation model. This model simulates the cell behavior during normal operation. Model validation results have been presented. The SPICE model shows good agreement with experimental results. Current-voltage characteristics, transconductance and unity gain frequency (fT) have been studied showing the effect of the threshold voltage shift (DeltaVth) due to nanocrystal charge on the device characteristics. The threshold voltage shift due to

  18. CMOS Active-Pixel Image Sensor With Simple Floating Gates

    Science.gov (United States)

    Fossum, Eric R.; Nakamura, Junichi; Kemeny, Sabrina E.

    1996-01-01

    Experimental complementary metal-oxide/semiconductor (CMOS) active-pixel image sensor integrated circuit features simple floating-gate structure, with metal-oxide/semiconductor field-effect transistor (MOSFET) as active circuit element in each pixel. Provides flexibility of readout modes, no kTC noise, and relatively simple structure suitable for high-density arrays. Features desirable for "smart sensor" applications.

  19. MemFlash device: floating gate transistors as memristive devices for neuromorphic computing

    Science.gov (United States)

    Riggert, C.; Ziegler, M.; Schroeder, D.; Krautschneider, W. H.; Kohlstedt, H.

    2014-10-01

    Memristive devices are promising candidates for future non-volatile memory applications and mixed-signal circuits. In the field of neuromorphic engineering these devices are especially interesting to emulate neuronal functionality. Therefore, new materials and material combinations are currently investigated, which are often not compatible with Si-technology processes. The underlying mechanisms of the device often remain unclear and are paired with low device endurance and yield. These facts define the current most challenging development tasks towards a reliable memristive device technology. In this respect, the MemFlash concept is of particular interest. A MemFlash device results from a diode configuration wiring scheme of a floating gate transistor, which enables the persistent device resistance to be varied according to the history of the charge flow through the device. In this study, we investigate the scaling conditions of the floating gate oxide thickness with respect to possible applications in the field of neuromorphic engineering. We show that MemFlash cells exhibit essential features with respect to neuromorphic applications. In particular, cells with thin floating gate oxides show a limited synaptic weight growth together with low energy dissipation. MemFlash cells present an attractive alternative for state-of-art memresitive devices. The emulation of associative learning is discussed by implementing a single MemFlash cell in an analogue circuit.

  20. MemFlash device: floating gate transistors as memristive devices for neuromorphic computing

    International Nuclear Information System (INIS)

    Riggert, C; Ziegler, M; Kohlstedt, H; Schroeder, D; Krautschneider, W H

    2014-01-01

    Memristive devices are promising candidates for future non-volatile memory applications and mixed-signal circuits. In the field of neuromorphic engineering these devices are especially interesting to emulate neuronal functionality. Therefore, new materials and material combinations are currently investigated, which are often not compatible with Si-technology processes. The underlying mechanisms of the device often remain unclear and are paired with low device endurance and yield. These facts define the current most challenging development tasks towards a reliable memristive device technology. In this respect, the MemFlash concept is of particular interest. A MemFlash device results from a diode configuration wiring scheme of a floating gate transistor, which enables the persistent device resistance to be varied according to the history of the charge flow through the device. In this study, we investigate the scaling conditions of the floating gate oxide thickness with respect to possible applications in the field of neuromorphic engineering. We show that MemFlash cells exhibit essential features with respect to neuromorphic applications. In particular, cells with thin floating gate oxides show a limited synaptic weight growth together with low energy dissipation. MemFlash cells present an attractive alternative for state-of-art memresitive devices. The emulation of associative learning is discussed by implementing a single MemFlash cell in an analogue circuit. (paper)

  1. Low Noise Bias Current/Voltage References Based on Floating-Gate MOS Transistors

    DEFF Research Database (Denmark)

    Igor, Mucha

    1997-01-01

    The exploitation of floating-gate MOS transistors as reference current and voltage sources is investigated. Test structures of common source and common drain floating-gate devices have been implemented in a commercially available 0.8 micron double-poly CMOS process. The measurements performed...

  2. State memory in solution gated epitaxial graphene

    Science.gov (United States)

    Butko, A. V.; Butko, V. Y.; Lebedev, S. P.; Lebedev, A. A.; Davydov, V. Y.; Smirnov, A. N.; Eliseyev, I. A.; Dunaevskiy, M. S.; Kumzerov, Y. A.

    2018-06-01

    We studied electrical transport in transistors fabricated on a surface of high quality epitaxial graphene with density of defects as low as 5·1010 cm-2 and observed quasistatic hysteresis with a time constant in a scale of hours. This constant is in a few orders of magnitude greater than the constant previously reported in CVD graphene. The hysteresis observed here can be described as a shift of ∼+2V of the Dirac point measured during a gate voltage increase from the position of the Dirac point measured during a gate voltage decrease. This hysteresis can be characterized as a nonvolatile quasistatic state memory effect in which the state of the gated graphene is determined by its initial state prior to entering the hysteretic region. Due to this effect the difference in resistance of the gated graphene measured in the hysteretic region at the same applied voltages can be as high as 70%. The observed effect can be explained by assuming that charge carriers in graphene and oppositely charged molecular ions from the solution form quasistable interfacial complexes at the graphene interface. These complexes likely preserve the initial state by preventing charge carriers in graphene from discharging in the hysteretic region.

  3. Using a Floating-Gate MOS Transistor as a Transducer in a MEMS Gas Sensing System

    Directory of Open Access Journals (Sweden)

    Gaspar Casados-Cruz

    2010-11-01

    Full Text Available Floating-gate MOS transistors have been widely used in diverse analog and digital applications. One of these is as a charge sensitive device in sensors for pH measurement in solutions or using gates with metals like Pd or Pt for hydrogen sensing. Efforts are being made to monolithically integrate sensors together with controlling and signal processing electronics using standard technologies. This can be achieved with the demonstrated compatibility between available CMOS technology and MEMS technology. In this paper an in-depth analysis is done regarding the reliability of floating-gate MOS transistors when charge produced by a chemical reaction between metallic oxide thin films with either reducing or oxidizing gases is present. These chemical reactions need temperatures around 200 °C or higher to take place, so thermal insulation of the sensing area must be assured for appropriate operation of the electronics at room temperature. The operation principle of the proposal here presented is confirmed by connecting the gate of a conventional MOS transistor in series with a Fe2O3 layer. It is shown that an electrochemical potential is present on the ferrite layer when reacting with propane.

  4. The GaN trench gate MOSFET with floating islands: High breakdown voltage and improved BFOM

    Science.gov (United States)

    Shen, Lingyan; Müller, Stephan; Cheng, Xinhong; Zhang, Dongliang; Zheng, Li; Xu, Dawei; Yu, Yuehui; Meissner, Elke; Erlbacher, Tobias

    2018-02-01

    A novel GaN trench gate (TG) MOSFET with P-type floating islands (FLI) in drift region, which can suppress the electric field peak at bottom of gate trench during the blocking state and prevent premature breakdown in gate oxide, is proposed and investigated by TCAD simulations. The influence of thickness, position, doping concentration and length of the FLI on breakdown voltage (BV) and specific on-resistance (Ron_sp) is studied, providing useful guidelines for design of this new type of device. Using optimized parameters for the FLI, GaN FLI TG-MOSFET obtains a BV as high as 2464 V with a Ron_sp of 3.0 mΩ cm2. Compared to the conventional GaN TG-MOSFET with the same structure parameters, the Baliga figure of merit (BFOM) is enhanced by 150%, getting closer to theoretical limit for GaN devices.

  5. A 1T Dynamic Random Access Memory Cell Based on Gated Thyristor with Surrounding Gate Structure for High Scalability.

    Science.gov (United States)

    Kim, Hyungjin; Kim, Sihyun; Kim, Hyun-Min; Lee, Kitae; Kim, Sangwan; Pak, Byung-Gook

    2018-09-01

    In this study, we investigate a one-transistor (1T) dynamic random access memory (DRAM) cell based on a gated-thyristor device utilizing voltage-driven bistability to enable high-speed operations. The structural feature of the surrounding gate using a sidewall provides high scalability with regard to constructing an array architecture of the proposed devices. In addition, the operation mechanism, I-V characteristics, DRAM operations, and bias dependence are analyzed using a commercial device simulator. Unlike conventional 1T DRAM cells utilizing the floating body effect, excess carriers which are required to be stored to make two different states are not generated but injected from the n+ cathode region, giving the device high-speed operation capabilities. The findings here indicate that the proposed DRAM cell offers distinct advantages in terms of scalability and high-speed operations.

  6. Theory of the synchronous motion of an array of floating flap gates oscillating wave surge converter

    Science.gov (United States)

    Michele, Simone; Sammarco, Paolo; d'Errico, Michele

    2016-08-01

    We consider a finite array of floating flap gates oscillating wave surge converter (OWSC) in water of constant depth. The diffraction and radiation potentials are solved in terms of elliptical coordinates and Mathieu functions. Generated power and capture width ratio of a single gate excited by incoming waves are given in terms of the radiated wave amplitude in the far field. Similar to the case of axially symmetric absorbers, the maximum power extracted is shown to be directly proportional to the incident wave characteristics: energy flux, angle of incidence and wavelength. Accordingly, the capture width ratio is directly proportional to the wavelength, thus giving a design estimate of the maximum efficiency of the system. We then compare the array and the single gate in terms of energy production. For regular waves, we show that excitation of the out-of-phase natural modes of the array increases the power output, while in the case of random seas we show that the array and the single gate achieve the same efficiency.

  7. Hybrid dual gate ferroelectric memory for multilevel information storage

    KAUST Repository

    Khan, Yasser; Caraveo-Frescas, Jesus Alfonso; Alshareef, Husam N.

    2015-01-01

    Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field

  8. Leaky Integrate-and-Fire Neuron Circuit Based on Floating-Gate Integrator

    Science.gov (United States)

    Kornijcuk, Vladimir; Lim, Hyungkwang; Seok, Jun Yeong; Kim, Guhyun; Kim, Seong Keun; Kim, Inho; Choi, Byung Joon; Jeong, Doo Seok

    2016-01-01

    The artificial spiking neural network (SNN) is promising and has been brought to the notice of the theoretical neuroscience and neuromorphic engineering research communities. In this light, we propose a new type of artificial spiking neuron based on leaky integrate-and-fire (LIF) behavior. A distinctive feature of the proposed FG-LIF neuron is the use of a floating-gate (FG) integrator rather than a capacitor-based one. The relaxation time of the charge on the FG relies mainly on the tunnel barrier profile, e.g., barrier height and thickness (rather than the area). This opens up the possibility of large-scale integration of neurons. The circuit simulation results offered biologically plausible spiking activity (circuit was subject to possible types of noise, e.g., thermal noise and burst noise. The simulation results indicated remarkable distributional features of interspike intervals that are fitted to Gamma distribution functions, similar to biological neurons in the neocortex. PMID:27242416

  9. Ultra-Low Power Consuming Direct Radiation Sensors Based on Floating Gate Structures

    Directory of Open Access Journals (Sweden)

    Evgeny Pikhay

    2017-07-01

    Full Text Available In this paper, we report on ultra-low power consuming single poly floating gate direct radiation sensors. The developed devices are intended for total ionizing dose (TID measurements and fabricated in a standard CMOS process flow. Sensor design and operation is discussed in detail. Original array sensors were suggested and fabricated that allowed high statistical significance of the radiation measurements and radiation imaging functions. Single sensors and array sensors were analyzed in combination with the specially developed test structures. This allowed insight into the physics of sensor operations and exclusion of the phenomena related to material degradation under irradiation in the interpretation of the measurement results. Response of the developed sensors to various sources of ionizing radiation (Gamma, X-ray, UV, energetic ions was investigated. The optimal design of sensor for implementation in dosimetry systems was suggested. The roadmap for future improvement of sensor performance is suggested.

  10. Implementation of floating gate MOSFET in inverter for threshold voltage tunability

    Directory of Open Access Journals (Sweden)

    Musa F.A.S.

    2017-01-01

    Full Text Available This paper presents the ability of floating gate MOSFET (FGMOS threshold voltage to be programmed or tuned which is exploited to improve the performance of electronic circuit design. This special characteristic owns by FGMOS is definitely contributes towards low voltage and low power circuit design. The comparison of threshold voltage between FGMOS and conventional NMOS is done in order to prove that FGMOS is able to produce a lower threshold voltage compared to conventional NMOS. In addition, in this paper, an implementation of FGMOS into inverter circuit is also done to show the programmability of FGMOS threshold voltage. The operations of the inverter circuits are verified using Sypnopsys simulation in 0.1μm CMOS technology with supply voltage of 1.8V.

  11. Real-time reconfigurable devices implemented in UV-light programmable floating-gate CMOS

    Energy Technology Data Exchange (ETDEWEB)

    Aunet, Snorre

    2002-06-01

    This dissertation describes using theory, computer simulations and laboratory measurements a new class of real time reconfigurable UV-programmable floating-gate circuits operating with current levels typically in the pA to {mu}A range, implemented in a standard double-poly CMOS technology. A new design method based on using the same basic two-MOSFET circuits extensively is proposed, meant for improving the opportunities to make larger FGUVMOS circuitry than previously reported. By using the same basic circuitry extensively, instead of different circuitry for basic digital functions, the goal is to ease UV-programming and test and save circuitry on chip and I/O-pads. Matching of circuitry should also be improved by using this approach. Compact circuitry can be made, reducing wiring and active components. Compared to earlier FGUVMOS approaches the number of transistors for implementing the CARRY' of a FULL-ADDER is reduced from 22 to 2. A complete FULL-ADDER can be implemented using only 8 transistors. 2-MOSFET circuits able to implement CARRY', NOR, NAND and INVERT functions are demonstrated by measurements on chip, working with power supply voltages ranging from 800 mV down to 93 mV. An 8-transistor FULL-ADDER might use 2500 times less energy than a FULL-ADDER implemented using standard cells in the same 0.6 {mu}m CMOS technology while running at 1 MHz. The circuits are also shown to be a new class of linear threshold elements, which is the basic building blocks of neural networks. Theory is developed as a help in the design of floating-gate circuits.

  12. Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

    Science.gov (United States)

    Jayanti, Srikant

    Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG

  13. Improved Reading Gate For Vertical-Bloch-Line Memory

    Science.gov (United States)

    Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

    1994-01-01

    Improved design for reading gate of vertical-Bloch-line magnetic-bubble memory increases reliability of discrimination between binary ones and zeros. Magnetic bubbles that signify binary "1" and "0" produced by applying sufficiently large chopping currents to memory stripes. Bubbles then propagated differentially in bubble sorter. Method of discriminating between ones and zeros more reliable.

  14. Input Stage for Low-Voltage, Low-Noise Preamplifiers Based on a Floating-Gate MOS Transistor

    DEFF Research Database (Denmark)

    Igor, Mucha

    1997-01-01

    A novel input stage for low-voltage, low-noise preamplifiers for integrated capacitive sensors is presented. The input stage of the preamplifier employs floating-gate MOS transistors which are capable of storing the operation point of the input stage over several years without any severe degradat......A novel input stage for low-voltage, low-noise preamplifiers for integrated capacitive sensors is presented. The input stage of the preamplifier employs floating-gate MOS transistors which are capable of storing the operation point of the input stage over several years without any severe...... degradation of the performance of the circuit and without the need for a repeating programming. In this way the noise originating from any resistance previously used for the definition of the operating point is avoided completely and, moreover, by avoiding the input high-pass filter both the saturation...

  15. Configurable unitary transformations and linear logic gates using quantum memories.

    Science.gov (United States)

    Campbell, G T; Pinel, O; Hosseini, M; Ralph, T C; Buchler, B C; Lam, P K

    2014-08-08

    We show that a set of optical memories can act as a configurable linear optical network operating on frequency-multiplexed optical states. Our protocol is applicable to any quantum memories that employ off-resonant Raman transitions to store optical information in atomic spins. In addition to the configurability, the protocol also offers favorable scaling with an increasing number of modes where N memories can be configured to implement arbitrary N-mode unitary operations during storage and readout. We demonstrate the versatility of this protocol by showing an example where cascaded memories are used to implement a conditional cz gate.

  16. Molecular sensing using monolayer floating gate, fully depleted SOI MOSFET acting as an exponential transducer.

    Science.gov (United States)

    Takulapalli, Bharath R

    2010-02-23

    Field-effect transistor-based chemical sensors fall into two broad categories based on the principle of signal transduction-chemiresistor or Schottky-type devices and MOSFET or inversion-type devices. In this paper, we report a new inversion-type device concept-fully depleted exponentially coupled (FDEC) sensor, using molecular monolayer floating gate fully depleted silicon on insulator (SOI) MOSFET. Molecular binding at the chemical-sensitive surface lowers the threshold voltage of the device inversion channel due to a unique capacitive charge-coupling mechanism involving interface defect states, causing an exponential increase in the inversion channel current. This response of the device is in opposite direction when compared to typical MOSFET-type sensors, wherein inversion current decreases in a conventional n-channel sensor device upon addition of negative charge to the chemical-sensitive device surface. The new sensor architecture enables ultrahigh sensitivity along with extraordinary selectivity. We propose the new sensor concept with the aid of analytical equations and present results from our experiments in liquid phase and gas phase to demonstrate the new principle of signal transduction. We present data from numerical simulations to further support our theory.

  17. Hybrid dual gate ferroelectric memory for multilevel information storage

    KAUST Repository

    Khan, Yasser

    2015-01-01

    Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field-effect transistor (FeFET) and a bottom thin-film transistor (TFT). The devices are all fabricated at low temperatures (∼200°C), and demonstrate excellent performance with high hole mobility of 2.7 cm2 V-1 s-1, large memory window of ∼18 V, and a low sub-threshold swing ∼-4 V dec-1. The channel conductance of the bottom-TFT and the top-FeFET can be controlled independently by the bottom and top gates, respectively. The results demonstrate multilevel nonvolatile information storage using ferroelectric memory devices with good retention characteristics.

  18. An Adaptable Neuromorphic Model of Orientation Selectivity Based On Floating Gate Dynamics

    Directory of Open Access Journals (Sweden)

    Priti eGupta

    2014-04-01

    Full Text Available The biggest challenge that the neuromorphic community faces today is to build systems that can be considered truly cognitive. Adaptation and self-organization are the two basic principles that underlie any cognitive function that the brain performs. If we can replicate this behavior in hardware, we move a step closer to our goal of having cognitive neuromorphic systems. Adaptive feature selectivity is a mechanism by which nature optimizes resources so as to have greater acuity for more abundant features. Developing neuromorphic feature maps can help design generic machines that can emulate this adaptive behavior. Most neuromorphic models that have attempted to build self-organizing systems, follow the approach of modeling abstract theoretical frameworks in hardware. While this is good from a modeling and analysis perspective, it may not lead to the most efficient hardware. On the other hand, exploiting hardware dynamics to build adaptive systems rather than forcing the hardware to behave like mathematical equations, seems to be a more robust methodology when it comes to developing actual hardware for real world applications. In this paper we use a novel time-staggered Winner Take All circuit, that exploits the adaptation dynamics of floating gate transistors, to model an adaptive cortical cell that demonstrates Orientation Selectivity, a well-known biological phenomenon observed in the visual cortex. The cell performs competitive learning, refining its weights in response to input patterns resembling different oriented bars, becoming selective to a particular oriented pattern. Different analysis performed on the cell such as orientation tuning, application of abnormal inputs, response to spatial frequency and periodic patterns reveal close similarity between our cell and its biological counterpart. Embedded in a RC grid, these cells interact diffusively exhibiting cluster formation, making way for adaptively building orientation selective maps

  19. A CMOS Micro-power, Class-AB “Flipped” Voltage Follower using the quasi floating-gate technique

    Directory of Open Access Journals (Sweden)

    Juan Jesus Ocampo-Hidalgo

    2017-05-01

    Full Text Available This paper presents the design and characterization of a new analog voltage follower for low-voltage applications. The main idea is based on the “Flipped” Voltage Follower and the use of the quasi-floating gate technique for achieving class AB operation. A test cell was simulated and fabricated using a 0,5 μm CMOS technology. When the proposed circuit is supplied with VDD = 1,5 V, it presents a power consumption of only 413 μW. Measurement and experimental results show a gain bandwidth product of 10 MHz and a total harmonic distortion of 1,12 % at 1 MHz.

  20. Adult forebrain NMDA receptors gate social motivation and social memory.

    Science.gov (United States)

    Jacobs, Stephanie; Tsien, Joe Z

    2017-02-01

    Motivation to engage in social interaction is critical to ensure normal social behaviors, whereas dysregulation in social motivation can contribute to psychiatric diseases such as schizophrenia, autism, social anxiety disorders and post-traumatic stress disorder (PTSD). While dopamine is well known to regulate motivation, its downstream targets are poorly understood. Given the fact that the dopamine 1 (D1) receptors are often physically coupled with the NMDA receptors, we hypothesize that the NMDA receptor activity in the adult forebrain principal neurons are crucial not only for learning and memory, but also for the proper gating of social motivation. Here, we tested this hypothesis by examining sociability and social memory in inducible forebrain-specific NR1 knockout mice. These mice are ideal for exploring the role of the NR1 subunit in social behavior because the NR1 subunit can be selectively knocked out after the critical developmental period, in which NR1 is required for normal development. We found that the inducible deletion of the NMDA receptors prior to behavioral assays impaired, not only object and social recognition memory tests, but also resulted in profound deficits in social motivation. Mice with ablated NR1 subunits in the forebrain demonstrated significant decreases in sociability compared to their wild type counterparts. These results suggest that in addition to its crucial role in learning and memory, the NMDA receptors in the adult forebrain principal neurons gate social motivation, independent of neuronal development. Copyright © 2016 Elsevier Inc. All rights reserved.

  1. Study of the enhancement-mode AlGaN/GaN high electron mobility transistor with split floating gates

    Science.gov (United States)

    Wang, Hui; Wang, Ning; Jiang, Ling-Li; Zhao, Hai-Yue; Lin, Xin-Peng; Yu, Hong-Yu

    2017-11-01

    In this work, the charge storage based split floating gates (FGs) enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are studied. The simulation results reveal that under certain density of two dimensional electron gas, the variation tendency of the threshold voltage (Vth) with the variation of the blocking dielectric thickness depends on the FG charge density. It is found that when the length sum and isolating spacing sum of the FGs both remain unchanged, the Vth shall decrease with the increasing FGs number but maintaining the device as E-mode. It is also reported that for the FGs HEMT, the failure of a FG will lead to the decrease of Vth as well as the increase of drain current, and the failure probability can be improved significantly with the increase of FGs number.

  2. A radiation-tolerant, low-power non-volatile memory based on silicon nanocrystal quantum dots

    OpenAIRE

    Bell, L. D.; Boer, E.; Ostraat, M.; Brongersma, M. L.; Flagan, R. C.; Atwater, H. A.; De Blauwe, J.; Green, M. L.

    2001-01-01

    Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in SiO_2 is a critical aspect of the performance ...

  3. Novel Quantum Dot Gate FETs and Nonvolatile Memories Using Lattice-Matched II-VI Gate Insulators

    Science.gov (United States)

    Jain, F. C.; Suarez, E.; Gogna, M.; Alamoody, F.; Butkiewicus, D.; Hohner, R.; Liaskas, T.; Karmakar, S.; Chan, P.-Y.; Miller, B.; Chandy, J.; Heller, E.

    2009-08-01

    This paper presents the successful use of ZnS/ZnMgS and other II-VI layers (lattice-matched or pseudomorphic) as high- k gate dielectrics in the fabrication of quantum dot (QD) gate Si field-effect transistors (FETs) and nonvolatile memory structures. Quantum dot gate FETs and nonvolatile memories have been fabricated in two basic configurations: (1) monodispersed cladded Ge nanocrystals (e.g., GeO x -cladded-Ge quantum dots) site-specifically self-assembled over the lattice-matched ZnMgS gate insulator in the channel region, and (2) ZnTe-ZnMgTe quantum dots formed by self-organization, using metalorganic chemical vapor-phase deposition (MOCVD), on ZnS-ZnMgS gate insulator layers grown epitaxially on Si substrates. Self-assembled GeO x -cladded Ge QD gate FETs, exhibiting three-state behavior, are also described. Preliminary results on InGaAs-on-InP FETs, using ZnMgSeTe/ZnSe gate insulator layers, are presented.

  4. Organizing of delay, input gate and memory of proportional chamber channel basing on D-trigger

    International Nuclear Information System (INIS)

    Vladimirov, S.V.; Kuzichev, V.F.; Rabin, N.V.

    1980-01-01

    Economical organization of delay, input gate and proportional chamber (PC) channel memory on the 155 TM2 D trigger basis is described. The channel consists of an amplifier; delay element permitting to synchronize PC signal and recording strobe-signal; input gate, where coincidence of the above signals occurs; memory element, where the data from a wire are recorded and stored; read gate through which the data are transmitted for further processing. Presented is one of the versions of circuit solution for delay element, input gate and momory element. Flowsheet peculiarity is the simplicity of fabrication and tuning as well as low cost of the device

  5. New AlGaN/GaN HEMTs employing both a floating gate and a field plate

    International Nuclear Information System (INIS)

    Lim, Jiyong; Choi, Young-Hwan; Kim, Young-Shil; Han, Min-Koo

    2010-01-01

    We designed and fabricated AlGaN/GaN high-electron-mobility transistors (HEMTs) employing both a floating gate (FG) and a field plate (FP), which increase the breakdown voltage of AlGaN/GaN HEMTs significantly without sacrificing forward electric characteristics. The electric field strength at the gate-drain region of the proposed AlGaN/GaN HEMT was reduced successfully due to an increase in the number of depletion region edges. The breakdown voltage of the proposed AlGaN/GaN HEMT was 1106 V, while those of the conventional devices with only an FP or FG were 688 and 828 V, respectively. The leakage current of the proposed AlGaN/GaN HEMTs was 1.68 μA under a reverse bias of -100 V while those of the conventional devices with only an FP or FG were 3.21 and 1.91 μA, respectively, under the same condition. The forward electric characteristics of the proposed and conventional AlGaN/GaN HEMTs are similar. The maximum drain current of the proposed AlGaN/GaN HEMTs was 344 mA mm -1 while those of the conventional devices with only an FP or FG were 350 and 357 mA mm -1 , respectively. The maximum transconductance of the proposed device was 102.9 mS mm -1 , while those of the conventional devices were 97.8 and 101.9 mS mm -1 . The breakdown voltage and the leakage current of the proposed device were improved considerably without sacrificing the forward electric characteristics. It should be noted that there were no additional processing steps and mask levels compared to the conventional FP process.

  6. The memory effect of a pentacene field-effect transistor with a polarizable gate dielectric

    Science.gov (United States)

    Unni, K. N. N.; de Bettignies, Remi; Dabos-Seignon, Sylvie; Nunzi, Jean-Michel

    2004-06-01

    The nonvolatile transistor memory element is an interesting topic in organic electronics. In this case a memory cell consists of only one device where the stored information is written as a gate insulator polarization by a gate voltage pulse and read by the channel conductance control with channel voltage pulse without destruction of the stored information. Therefore such transistor could be the base of non-volatile non-destructively readable computer memory of extremely high density. Also devices with polarizable gate dielectrics can function more effectively in certain circuits. The effective threshold voltage Vt can be brought very close to zero, for applications where the available gate voltage is limited. Resonant and adaptive circuits can be tuned insitu by polarizing the gates. Poly(vinylidene fluoride), PVDF and its copolymer with trifluoroethylene P(VDF-TrFE) are among the best known and most widely used ferroelectric polymers. In this manuscript, we report new results of an organic FET, fabricated with pentacene as the active material and P(VDF-TrFE) as the gate insulator. Application of a writing voltage of -50 V for short duration results in significant change in the threshold voltage and remarkable increase in the drain current. The memory effect is retained over a period of 20 hours.

  7. Insights into operation of planar tri-gate tunnel field effect transistor for dynamic memory application

    Science.gov (United States)

    Navlakha, Nupur; Kranti, Abhinav

    2017-07-01

    Insights into device physics and operation through the control of energy barriers are presented for a planar tri-gate Tunnel Field Effect Transistor (TFET) based dynamic memory. The architecture consists of a double gate (G1) at the source side and a single gate (G2) at the drain end of the silicon film. Dual gates (G1) effectively enhance the tunneling based read mechanism through the enhanced coupling and improved electrostatic control over the channel. The single gate (G2) controls the holes in the potential barrier induced through the proper selection of bias and workfunction. The results indicate that the planar tri-gate achieves optimum performance evaluated in terms of two composite metrics (M1 and M2), namely, product of (i) Sense Margin (SM) and Retention Time (RT) i.e., M1 = SM × RT and (ii) Sense Margin and Current Ratio (CR) i.e., M2 = SM × CR. The regulation of barriers created by the gates (G1 and G2) through the optimal use of device parameters leads to better performance metrics, with significant improvement at scaled lengths as compared to other tunneling based dynamic memory architectures. The investigation shows that lengths of G1, G2 and lateral spacing can be scaled down to 25 nm, 50 nm, and 30 nm, respectively, while achieving reasonable values for (M1, M2). The work demonstrates a systematic approach to showcase the advancement in TFET based Dynamic Random Access Memory (DRAM) through the use of planar tri-gate topology at a lower bias value. The concept, design, and operation of planar tri-gate architecture provide valuable viewpoints for TFET based DRAM.

  8. Radiation-hardened optically reconfigurable gate array exploiting holographic memory characteristics

    Science.gov (United States)

    Seto, Daisaku; Watanabe, Minoru

    2015-09-01

    In this paper, we present a proposal for a radiation-hardened optically reconfigurable gate array (ORGA). The ORGA is a type of field programmable gate array (FPGA). The ORGA configuration can be executed by the exploitation of holographic memory characteristics even if 20% of the configuration data are damaged. Moreover, the optoelectronic technology enables the high-speed reconfiguration of the programmable gate array. Such a high-speed reconfiguration can increase the radiation tolerance of its programmable gate array to 9.3 × 104 times higher than that of current FPGAs. Through experimentation, this study clarified the configuration dependability using the impulse-noise emulation and high-speed configuration capabilities of the ORGA with corrupt configuration contexts. Moreover, the radiation tolerance of the programmable gate array was confirmed theoretically through probabilistic calculation.

  9. The parallel processing system for fast 3D-CT image reconstruction by circular shifting float memory architecture

    International Nuclear Information System (INIS)

    Wang Shi; Kang Kejun; Wang Jingjin

    1996-01-01

    Computerized Tomography (CT) is expected to become an inevitable diagnostic technique in the future. However, the long time required to reconstruct an image has been one of the major drawbacks associated with this technique. Parallel process is one of the best way to solve this problem. This paper gives the architecture, hardware and software design of PIRS-4 (4-processor Parallel Image Reconstruction System), which is a parallel processing system for fast 3D-CT image reconstruction by circular shifting float memory architecture. It includes the structure and components of the system, the design of crossbar switch and details of control model, the description of RPBP image reconstruction, the choice of OS (Operate System) and language, the principle of imitating EMS, direct memory R/W of float and programming in the protect model. Finally, the test results are given

  10. Auto- and hetero-associative memory using a 2-D optical logic gate

    Science.gov (United States)

    Chao, Tien-Hsin

    1989-06-01

    An optical associative memory system suitable for both auto- and hetero-associative recall is demonstrated. This system utilizes Hamming distance as the similarity measure between a binary input and a memory image with the aid of a two-dimensional optical EXCLUSIVE OR (XOR) gate and a parallel electronics comparator module. Based on the Hamming distance measurement, this optical associative memory performs a nearest neighbor search and the result is displayed in the output plane in real-time. This optical associative memory is fast and noniterative and produces no output spurious states as compared with that of the Hopfield neural network model.

  11. Attention Gating in Short-Term Visual Memory.

    Science.gov (United States)

    Reeves, Adam; Sperling, George

    1986-01-01

    An experiment is conducted showing that an attention shift to a stream of numerals presented in rapid serial visual presentation mode produces not a total loss, but a systematic distortion of order. An attention gating model (AGM) is developed from a more general attention model. (Author/LMO)

  12. Evidence for a role of GABA- and glutamate-gated chloride channels in olfactory memory.

    Science.gov (United States)

    Boumghar, Katia; Couret-Fauvel, Thomas; Garcia, Mikael; Armengaud, Catherine

    2012-11-01

    In the honeybee, we investigated the role of transmissions mediated by GABA-gated chloride channels and glutamate-gated chloride channels (GluCls) of the mushroom bodies (MBs) on olfactory learning using a single-trial olfactory conditioning paradigm. The GABAergic antagonist picrotoxin (PTX) or the GluCl antagonist L-trans-pyrrolidine-2,4-dicarboxylic acid (L-trans-PDC) was injected alone or in combination into the α-lobes of MBs. PTX impaired early long-term olfactory memory when injected before conditioning or before testing. L-trans-PDC alone induced no significant effect on learning and memory but induced a less specific response to the conditioned odor. When injected before PTX, L-trans-PDC was able to modulate PTX effects. These results emphasize the role of MB GABA-gated chloride channels in consolidation processes and strongly support that GluCls are involved in the perception of the conditioned stimulus.

  13. Direct label-free electrical immunodetection of transplant rejection protein biomarker in physiological buffer using floating gate AlGaN/GaN high electron mobility transistors.

    Science.gov (United States)

    Tulip, Fahmida S; Eteshola, Edward; Desai, Suchita; Mostafa, Salwa; Roopa, Subramanian; Evans, Boyd; Islam, Syed Kamrul

    2014-06-01

    Monokine induced by interferon gamma (MIG/CXCL9) is used as an immune biomarker for early monitoring of transplant or allograft rejection. This paper demonstrates a direct electrical, label-free detection method of recombinant human MIG with anti-MIG IgG molecules in physiologically relevant buffer environment. The sensor platform used is a biologically modified GaN-based high electron mobility transistor (HEMT) device. Biomolecular recognition capability was provided by using high affinity anti-MIG monoclonal antibody to form molecular affinity interface receptors on short N-hydroxysuccinimide-ester functionalized disulphide (DSP) self-assembled monolayers (SAMs) on the gold sensing gate of the HEMT device. A floating gate configuration has been adopted to eliminate the influences of external gate voltage. Preliminary test results with the proposed chemically treated GaN HEMT biosensor show that MIG can be detected for a wide range of concentration varying from 5 ng/mL to 500 ng/mL.

  14. Graphene-ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations

    Science.gov (United States)

    Kim, Woo Young; Kim, Hyeon-Don; Kim, Teun-Teun; Park, Hyun-Sung; Lee, Kanghee; Choi, Hyun Joo; Lee, Seung Hoon; Son, Jaehyeon; Park, Namkyoo; Min, Bumki

    2016-01-01

    Memory metamaterials are artificial media that sustain transformed electromagnetic properties without persistent external stimuli. Previous memory metamaterials were realized with phase-change materials, such as vanadium dioxide or chalcogenide glasses, which exhibit memory behaviour with respect to electrically/optically induced thermal stimuli. However, they require a thermally isolated environment for longer retention or strong optical pump for phase-change. Here we demonstrate electrically programmable nonvolatile memory metadevices realised by the hybridization of graphene, a ferroelectric and meta-atoms/meta-molecules, and extend the concept further to establish reconfigurable logic-gate metadevices. For a memory metadevice having a single electrical input, amplitude, phase and even the polarization multi-states were clearly distinguishable with a retention time of over 10 years at room temperature. Furthermore, logic-gate functionalities were demonstrated with reconfigurable logic-gate metadevices having two electrical inputs, with each connected to separate ferroelectric layers that act as the multi-level controller for the doping level of the sandwiched graphene layer.

  15. Alpha power gates relevant information during working memory updating.

    Science.gov (United States)

    Manza, Peter; Hau, Chui Luen Vera; Leung, Hoi-Chung

    2014-04-23

    Human working memory (WM) is inherently limited, so we must filter out irrelevant information in our environment or our mind while retaining limited important relevant contents. Previous work suggests that neural oscillations in the alpha band (8-14 Hz) play an important role in inhibiting incoming distracting information during attention and selective encoding tasks. However, whether alpha power is involved in inhibiting no-longer-relevant content or in representing relevant WM content is still debated. To clarify this issue, we manipulated the amount of relevant/irrelevant information using a task requiring spatial WM updating while measuring neural oscillatory activity via EEG and localized current sources across the scalp using a surface Laplacian transform. An initial memory set of two, four, or six spatial locations was to be memorized over a delay until an updating cue was presented indicating that only one or three locations remained relevant for a subsequent recognition test. Alpha amplitude varied with memory maintenance and updating demands among a cluster of left frontocentral electrodes. Greater postcue alpha power was associated with the high relevant load conditions (six and four dots cued to reduce to three relevant) relative to the lower load conditions (four and two dots reduced to one). Across subjects, this difference in alpha power was correlated with condition differences in performance accuracy. In contrast, no significant effects of irrelevant load were observed. These findings demonstrate that, during WM updating, alpha power reflects maintenance of relevant memory contents rather than suppression of no-longer-relevant memory traces.

  16. Controlling Working Memory Operations by Selective Gating: The Roles of Oscillations and Synchrony

    Science.gov (United States)

    Dipoppa, Mario; Szwed, Marcin; Gutkin, Boris S.

    2016-01-01

    Working memory (WM) is a primary cognitive function that corresponds to the ability to update, stably maintain, and manipulate short-term memory (ST M) rapidly to perform ongoing cognitive tasks. A prevalent neural substrate of WM coding is persistent neural activity, the property of neurons to remain active after having been activated by a transient sensory stimulus. This persistent activity allows for online maintenance of memory as well as its active manipulation necessary for task performance. WM is tightly capacity limited. Therefore, selective gating of sensory and internally generated information is crucial for WM function. While the exact neural substrate of selective gating remains unclear, increasing evidence suggests that it might be controlled by modulating ongoing oscillatory brain activity. Here, we review experiments and models that linked selective gating, persistent activity, and brain oscillations, putting them in the more general mechanistic context of WM. We do so by defining several operations necessary for successful WM function and then discussing how such operations may be carried out by mechanisms suggested by computational models. We specifically show how oscillatory mechanisms may provide a rapid and flexible active gating mechanism for WM operations. PMID:28154616

  17. Auto and hetero-associative memory using a 2-D optical logic gate

    Science.gov (United States)

    Chao, Tien-Hsin (Inventor)

    1992-01-01

    An optical system for auto-associative and hetero-associative recall utilizing Hamming distance as the similarity measure between a binary input image vector V(sup k) and a binary image vector V(sup m) in a first memory array using an optical Exclusive-OR gate for multiplication of each of a plurality of different binary image vectors in memory by the input image vector. After integrating the light of each product V(sup k) x V(sup m), a shortest Hamming distance detection electronics module determines which product has the lowest light intensity and emits a signal that activates a light emitting diode to illuminate a corresponding image vector in a second memory array for display. That corresponding image vector is identical to the memory image vector V(sup m) in the first memory array for auto-associative recall or related to it, such as by name, for hetero-associative recall.

  18. Hardware system of parallel processing for fast CT image reconstruction based on circular shifting float memory architecture

    International Nuclear Information System (INIS)

    Wang Shi; Kang Kejun; Wang Jingjin

    1995-01-01

    Computerized Tomography (CT) is expected to become an inevitable diagnostic technique in the future. However, the long time required to reconstruct an image has been one of the major drawbacks associated with this technique. Parallel process is one of the best way to solve this problem. This paper gives the architecture and hardware design of PIRS-4 (4-processor Parallel Image Reconstruction System) which is a parallel processing system for fast 3D-CT image reconstruction by circular shifting float memory architecture. It includes structure and component of the system, the design of cross bar switch and details of control model. The test results are described

  19. Memory effect in silicon time-gated single-photon avalanche diodes

    International Nuclear Information System (INIS)

    Dalla Mora, A.; Contini, D.; Di Sieno, L.; Tosi, A.; Boso, G.; Villa, F.; Pifferi, A.

    2015-01-01

    We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons

  20. Memory effect in silicon time-gated single-photon avalanche diodes

    Energy Technology Data Exchange (ETDEWEB)

    Dalla Mora, A.; Contini, D., E-mail: davide.contini@polimi.it; Di Sieno, L. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Tosi, A.; Boso, G.; Villa, F. [Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Pifferi, A. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); CNR, Istituto di Fotonica e Nanotecnologie, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy)

    2015-03-21

    We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons.

  1. Clocking In Time to Gate Memory Processes: The Circadian Clock Is Part of the Ins and Outs of Memory

    Directory of Open Access Journals (Sweden)

    Oliver Rawashdeh

    2018-01-01

    Full Text Available Learning, memory consolidation, and retrieval are processes known to be modulated by the circadian (circa: about; dies: day system. The circadian regulation of memory performance is evolutionarily conserved, independent of the type and complexity of the learning paradigm tested, and not specific to crepuscular, nocturnal, or diurnal organisms. In mammals, long-term memory (LTM formation is tightly coupled to de novo gene expression of plasticity-related proteins and posttranslational modifications and relies on intact cAMP/protein kinase A (PKA/protein kinase C (PKC/mitogen-activated protein kinase (MAPK/cyclic adenosine monophosphate response element-binding protein (CREB signaling. These memory-essential signaling components cycle rhythmically in the hippocampus across the day and night and are clearly molded by an intricate interplay between the circadian system and memory. Important components of the circadian timing mechanism and its plasticity are members of the Period clock gene family (Per1, Per2. Interestingly, Per1 is rhythmically expressed in mouse hippocampus. Observations suggest important and largely unexplored roles of the clock gene protein PER1 in synaptic plasticity and in the daytime-dependent modulation of learning and memory. Here, we review the latest findings on the role of the clock gene Period 1 (Per1 as a candidate molecular and mechanistic blueprint for gating the daytime dependency of memory processing.

  2. Memory effect in gated single-photon avalanche diodes: a limiting noise contribution similar to afterpulsing

    Science.gov (United States)

    Contini, D.; Dalla Mora, A.; Di Sieno, L.; Cubeddu, R.; Tosi, A.; Boso, G.; Pifferi, A.

    2013-03-01

    In recent years, emerging applications, such as diffuse optical imaging and spectroscopy (e.g., functional brain imaging and optical mammography), in which a wide dynamic range is crucial, have turned the interest towards Single-Photon Avalanche Diode (SPAD). In these fields, the use of a fast-gated SPAD has proven to be a successful technique to increase the measurement sensitivity of different orders of magnitude. However, an unknown background noise has been observed at high illumination during the gate-OFF time, thus setting a limit to the maximum increase of the dynamic range. In this paper we describe this noise in thin-junction silicon single-photon avalanche diode when a large amount of photons reaches the gated detector during the OFF time preceding the enabling time. This memory effect increases the background noise with respect to primary dark count rate similarly to a classical afterpulsing process, but differently it is not related to a previous avalanche ignition in the detector. We discovered that memory effect increases linearly with the power of light impinging on the detector and it has an exponential trend with time constants far different from those of afterpulsing and independently of the bias voltage applied to the junction. For these reasons, the memory effect is not due to the same trapping states of afterpulsing and must be described as a different process.

  3. The effects of interstimulus interval on sensory gating and on preattentive auditory memory in the oddball paradigm. Can magnitude of the sensory gating affect preattentive auditory comparison process?

    Science.gov (United States)

    Ermutlu, M Numan; Demiralp, Tamer; Karamürsel, Sacit

    2007-01-22

    P50, and mismatch negativity (MMN) are components of event-related potentials (ERP) reflecting sensory gating and preattentive auditory memory, respectively. Interstimulus interval (ISI) is an important determinant of the amplitudes of these components and N1. In the present study the interrelation between stimulus gating and preattentive auditory sensory memory were investigated as a function of ISI in 1.5, 2.5 and 3.5s in 15 healthy volunteered participants. ISI factor affected the N1 peak amplitude significantly. MMN amplitude in 2.5s ISI was significantly smaller compared to 1.5 and 3.5s ISI. ISI X stimuli interaction on P50 amplitude was statistically significant. P50 amplitudes to deviant stimuli in 2.5s ISI were larger than the P50 amplitudes in other ISIs. P50 difference (P50d) waveform amplitude correlated significantly with MMN amplitude. The results suggest that: (i) auditory sensory gating could affect preattentive auditory sensory memory by supplying input to the comparator mechanism; (ii) 2.5s ISI is important in displaying the sensory gating and preattentive auditory sensory memory relation.

  4. CMOS integration of high-k/metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits

    Science.gov (United States)

    Dentoni Litta, Eugenio; Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; O’Sullivan, Barry; Machkaoutsan, Vladimir; Fazan, Pierre; Ji, Yunhyuck; Mannaert, Geert; Lorant, Christophe; Sebaai, Farid; Thiam, Arame; Ercken, Monique; Demuynck, Steven; Horiguchi, Naoto

    2018-04-01

    Integration of high-k/metal gate stacks in peripheral transistors is a major candidate to ensure continued scaling of dynamic random access memory (DRAM) technology. In this paper, the CMOS integration of diffusion and gate replacement (D&GR) high-k/metal gate stacks is investigated, evaluating four different approaches for the critical patterning step of removing the N-type field effect transistor (NFET) effective work function (eWF) shifter stack from the P-type field effect transistor (PFET) area. The effect of plasma exposure during the patterning step is investigated in detail and found to have a strong impact on threshold voltage tunability. A CMOS integration scheme based on an experimental wet-compatible photoresist is developed and the fulfillment of the main device metrics [equivalent oxide thickness (EOT), eWF, gate leakage current density, on/off currents, short channel control] is demonstrated.

  5. Analysis of the Effect of Channel Leakage on Design, Characterization and Modelling of a High Voltage Pseudo-Floating Gate Sensor-Front-End

    Directory of Open Access Journals (Sweden)

    Luca Marchetti

    2017-10-01

    Full Text Available In this paper, we analyze the effects of channel leakage on the design, modelling and characterization of a high voltage pseudo-floating gate amplifier (PFGA used as sensor front-end. Leakages are known as a major challenge in new modern CMOS technologies, which are used to bias the PFGA, and consequently affect the behavior of the amplifier. As high voltages are desired for actuation of many types of resonating sensors, especially in ultrasound applications, PFGA implemented in high voltage and low leakage technologies, such as older CMOS fabrication processes or power MOSFET can be the only option. The challenge with these technologies used to implement the PFGA is that the leakages are very low, which affect the biasing of the floating gate. However, the numerous advantages of this type of amplifier, implemented with modern fabrication processes, such as high flexibility, compactness, low power consumption , etc. encouraged the authors to research about this topic. This work provides analysis of the working principle and the design rules for this amplifier, emphasizing the major differences between PFGA implemented in low leakage and high leakage technologies. Static and dynamic analysis, input offset and non-linearity of the PFGA are the main topics of this article. Three different design approaches are presented in this paper, in order to provide a more general design procedure and offset compensation for any low leakage PFGA. The amplifier has been simulated in AMS- 0 . 35 μ m CMOS models for supply voltages of 5 V and 10 V. Two prototypes have been realized to verify the validity of the modelling and the simulation results. Both devices have been realized by using discrete components and mounted on a printed circuit board. In this work, MOSFETs are realized by using commercial IC CD4007UB and 2N7000. Measurement results of the first prototype proved that the implementation of a low leakage PFGA is possible after that the input offset of

  6. Fabrication of Nonvolatile Memory Effects in High-k Dielectric Thin Films Using Electron Irradiation

    International Nuclear Information System (INIS)

    Park, Chanrock; Cho, Daehee; Kim, Jeongeun; Hwang, Jinha

    2010-01-01

    Electron Irradiation can be applied towards nano-floating gate memories which are recognized as one of the next-generation nonvolatile memory semiconductors. NFGMs can overcome the preexisting limitations encountered in Dynamic Random Access Memories and Flash memories with the excellent advantages, i. e. high-density information storage, high response speed, high compactness, etc. The traditional nano-floating gate memories are fabricated through multi-layered nano structures of the dissimilar materials where the charge-trapping portions are sandwiched into the high-k dielectrics. However, this work reports the unique nonvolatile responses in single-layered high-k dielectric thin films if irradiated with highly accelerated electron beams. The implications of the electron irradiation will be discussed towards high-performance nano-floating gate memories

  7. Gating of hippocampal activity, plasticity, and memory by entorhinal cortex long-range inhibition.

    Science.gov (United States)

    Basu, Jayeeta; Zaremba, Jeffrey D; Cheung, Stephanie K; Hitti, Frederick L; Zemelman, Boris V; Losonczy, Attila; Siegelbaum, Steven A

    2016-01-08

    The cortico-hippocampal circuit is critical for storage of associational memories. Most studies have focused on the role in memory storage of the excitatory projections from entorhinal cortex to hippocampus. However, entorhinal cortex also sends inhibitory projections, whose role in memory storage and cortico-hippocampal activity remains largely unexplored. We found that these long-range inhibitory projections enhance the specificity of contextual and object memory encoding. At the circuit level, these γ-aminobutyric acid (GABA)-releasing projections target hippocampal inhibitory neurons and thus act as a disinhibitory gate that transiently promotes the excitation of hippocampal CA1 pyramidal neurons by suppressing feedforward inhibition. This enhances the ability of CA1 pyramidal neurons to fire synaptically evoked dendritic spikes and to generate a temporally precise form of heterosynaptic plasticity. Long-range inhibition from entorhinal cortex may thus increase the precision of hippocampal-based long-term memory associations by assessing the salience of mnemonormation to the immediate sensory input. Copyright © 2016, American Association for the Advancement of Science.

  8. Computing with networks of spiking neurons on a biophysically motivated floating-gate based neuromorphic integrated circuit.

    Science.gov (United States)

    Brink, S; Nease, S; Hasler, P

    2013-09-01

    Results are presented from several spiking network experiments performed on a novel neuromorphic integrated circuit. The networks are discussed in terms of their computational significance, which includes applications such as arbitrary spatiotemporal pattern generation and recognition, winner-take-all competition, stable generation of rhythmic outputs, and volatile memory. Analogies to the behavior of real biological neural systems are also noted. The alternatives for implementing the same computations are discussed and compared from a computational efficiency standpoint, with the conclusion that implementing neural networks on neuromorphic hardware is significantly more power efficient than numerical integration of model equations on traditional digital hardware. Copyright © 2013 Elsevier Ltd. All rights reserved.

  9. Preparation of NiFe binary alloy nanocrystals for nonvolatile memory applications

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    In this work,an idea which applies binary alloy nanocrystal floating gate to nonvolatile memory application was introduced.The relationship between binary alloy’s work function and its composition was discussed theoretically.A nanocrystal floating gate structure with NiFe nanocrystals embedded in SiO2 dielectric layers was fabricated by magnetron sputtering.The micro-structure and composition deviation of the prepared NiFe nanocrystals were also investigated by TEM and EDS.

  10. Development of measurement system for radiation effect on static random access memory based field programmable gate array

    International Nuclear Information System (INIS)

    Yao Zhibin; He Baoping; Zhang Fengqi; Guo Hongxia; Luo Yinhong; Wang Yuanming; Zhang Keying

    2009-01-01

    Based on the detailed investigation in field programmable gate array(FPGA) radiation effects theory, a measurement system for radiation effects on static random access memory(SRAM)-based FPGA was developed. The testing principle of internal memory, function and power current was introduced. The hardware and software implement means of system were presented. Some important parameters for radiation effects on SRAM-based FPGA, such as configuration RAM upset section, block RAM upset section, function fault section and single event latchup section can be gained with this system. The transmission distance of the system can be over 50 m and the maximum number of tested gates can reach one million. (authors)

  11. Monitoring of Postoperative Bone Healing Using Smart Trauma-Fixation Device With Integrated Self-Powered Piezo-Floating-Gate Sensors.

    Science.gov (United States)

    Borchani, Wassim; Aono, Kenji; Lajnef, Nizar; Chakrabartty, Shantanu

    2016-07-01

    Achieving better surgical outcomes in cases of traumatic bone fractures requires postoperative monitoring of changes in the growth and mechanical properties of the tissue and bones during the healing process. While current in-vivo imaging techniques can provide a snapshot of the extent of bone growth, it is unable to provide a history of the healing process, which is important if any corrective surgery is required. Monitoring the time evolution of in-vivo mechanical loads using existing technology is a challenge due to the need for continuous power while maintaining patient mobility and comfort. This paper investigates the feasibility of self-powered monitoring of the bone-healing process using our previously reported piezo-floating-gate (PFG) sensors. The sensors are directly integrated with a fixation device and operate by harvesting energy from microscale strain variations in the fixation structure. We show that the sensors can record and store the statistics of the strain evolution during the healing process for offline retrieval and analysis. Additionally, we present measurement results using a biomechanical phantom comprising of a femur fracture fixation plate; bone healing is emulated by inserting different materials, with gradually increasing elastic moduli, inside a fracture gap. The PFG sensor can effectively sense, compute, and record continuously evolving statistics of mechanical loading over a typical healing period of a bone, and the statistics could be used to differentiate between different bone-healing conditions. The proposed sensor presents a reliable objective technique to assess bone-healing progress and help decide on the removal time of the fixation device.

  12. Memory and learning behaviors mimicked in nanogranular SiO2-based proton conductor gated oxide-based synaptic transistors.

    Science.gov (United States)

    Wan, Chang Jin; Zhu, Li Qiang; Zhou, Ju Mei; Shi, Yi; Wan, Qing

    2013-11-07

    In neuroscience, signal processing, memory and learning function are established in the brain by modifying ionic fluxes in neurons and synapses. Emulation of memory and learning behaviors of biological systems by nanoscale ionic/electronic devices is highly desirable for building neuromorphic systems or even artificial neural networks. Here, novel artificial synapses based on junctionless oxide-based protonic/electronic hybrid transistors gated by nanogranular phosphorus-doped SiO2-based proton-conducting films are fabricated on glass substrates by a room-temperature process. Short-term memory (STM) and long-term memory (LTM) are mimicked by tuning the pulse gate voltage amplitude. The LTM process in such an artificial synapse is due to the proton-related interfacial electrochemical reaction. Our results are highly desirable for building future neuromorphic systems or even artificial networks via electronic elements.

  13. MASMA: a versatile multifunctional unit (gated window amplifier, analog memory, and height-to-time converter)

    International Nuclear Information System (INIS)

    Goursky, V.; Thenes, P.

    1969-01-01

    This multipurpose unit is designed to accomplish one of the following functions: - gated window amplifier, - Analog memory and - Amplitude-to-time converter. The first function is mainly devoted to improve the poor resolution of pulse-height analyzers with a small number of channels. The analog memory, a new function in the standard range of plug-in modules, is capable of performing a number of operations: 1) fixed delay, or variable delay dependent on an external parameter (application to the analog processing of non-coincident pulses), 2) de-randomiser to increase the efficiency of the pulse height analysis in a spectrometry experiment, 3) linear multiplexer to allow an analyser to serve as many spectrometry devices as memory elements that it possesses. Associated with a coding scaler, this unit, if used as a amplitude-to-time converter, constitutes a Wilkinson A.D.C with a capability of 10 bits (or more) and with a 100 MHz clock frequency. (authors) [fr

  14. Ontogeny of sensorimotor gating and short-term memory processing throughout the adolescent period in rats

    Directory of Open Access Journals (Sweden)

    Anja A. Goepfrich

    2017-06-01

    Full Text Available Adolescence and puberty are highly susceptible developmental periods during which the neuronal organization and maturation of the brain is completed. The endocannabinoid (eCB system, which is well known to modulate cognitive processing, undergoes profound and transient developmental changes during adolescence. With the present study we were aiming to examine the ontogeny of cognitive skills throughout adolescence in male rats and clarify the potential modulatory role of CB1 receptor signalling. Cognitive skills were assessed repeatedly every 10th day in rats throughout adolescence. All animals were tested for object recognition memory and prepulse inhibition of the acoustic startle reflex. Although cognitive performance in short-term memory as well as sensorimotor gating abilities were decreased during puberty compared to adulthood, both tasks were found to show different developmental trajectories throughout adolescence. A low dose of the CB1 receptor antagonist/inverse agonist SR141716 was found to improve recognition memory specifically in pubertal animals while not affecting behavioral performance at other ages tested. The present findings demonstrate that the developmental trajectory of cognitive abilities does not occur linearly for all cognitive processes and is strongly influenced by pubertal maturation. Developmental alterations within the eCB system at puberty onset may be involved in these changes in cognitive processing.

  15. Tracking Real-Time Changes in Working Memory Updating and Gating with the Event-Based Eye-Blink Rate

    NARCIS (Netherlands)

    Rac-Lubashevsky, R.; Slagter, H.A.; Kessler, Y.

    2017-01-01

    Effective working memory (WM) functioning depends on the gating process that regulates the balance between maintenance and updating of WM. The present study used the event-based eye-blink rate (ebEBR), which presumably reflects phasic striatal dopamine activity, to examine how the cognitive

  16. MacLiammóir's minstrel and Johnston's morality : cultural memories of the Easter Rising at the Dublin Gate Theatre

    NARCIS (Netherlands)

    van den Beuken, Ruud

    This article explores how Micheál MacLiammóir and Denis Johnston attempted to perform cultural memories of the Easter Rising at the Dublin Gate Theatre and thereby articulated their respective views on a colonial past that had to be reassessed anew, on the one hand, and a postcolonial future that

  17. The Role of Anterior Nuclei of the Thalamus: A Subcortical Gate in Memory Processing: An Intracerebral Recording Study.

    Directory of Open Access Journals (Sweden)

    Klára Štillová

    Full Text Available To study the involvement of the anterior nuclei of the thalamus (ANT as compared to the involvement of the hippocampus in the processes of encoding and recognition during visual and verbal memory tasks.We studied intracerebral recordings in patients with pharmacoresistent epilepsy who underwent deep brain stimulation (DBS of the ANT with depth electrodes implanted bilaterally in the ANT and compared the results with epilepsy surgery candidates with depth electrodes implanted bilaterally in the hippocampus. We recorded the event-related potentials (ERPs elicited by the visual and verbal memory encoding and recognition tasks.P300-like potentials were recorded in the hippocampus by visual and verbal memory encoding and recognition tasks and in the ANT by the visual encoding and visual and verbal recognition tasks. No significant ERPs were recorded during the verbal encoding task in the ANT. In the visual and verbal recognition tasks, the P300-like potentials in the ANT preceded the P300-like potentials in the hippocampus.The ANT is a structure in the memory pathway that processes memory information before the hippocampus. We suggest that the ANT has a specific role in memory processes, especially memory recognition, and that memory disturbance should be considered in patients with ANT-DBS and in patients with ANT lesions. ANT is well positioned to serve as a subcortical gate for memory processing in cortical structures.

  18. The Role of Anterior Nuclei of the Thalamus: A Subcortical Gate in Memory Processing: An Intracerebral Recording Study.

    Science.gov (United States)

    Štillová, Klára; Jurák, Pavel; Chládek, Jan; Chrastina, Jan; Halámek, Josef; Bočková, Martina; Goldemundová, Sabina; Říha, Ivo; Rektor, Ivan

    2015-01-01

    To study the involvement of the anterior nuclei of the thalamus (ANT) as compared to the involvement of the hippocampus in the processes of encoding and recognition during visual and verbal memory tasks. We studied intracerebral recordings in patients with pharmacoresistent epilepsy who underwent deep brain stimulation (DBS) of the ANT with depth electrodes implanted bilaterally in the ANT and compared the results with epilepsy surgery candidates with depth electrodes implanted bilaterally in the hippocampus. We recorded the event-related potentials (ERPs) elicited by the visual and verbal memory encoding and recognition tasks. P300-like potentials were recorded in the hippocampus by visual and verbal memory encoding and recognition tasks and in the ANT by the visual encoding and visual and verbal recognition tasks. No significant ERPs were recorded during the verbal encoding task in the ANT. In the visual and verbal recognition tasks, the P300-like potentials in the ANT preceded the P300-like potentials in the hippocampus. The ANT is a structure in the memory pathway that processes memory information before the hippocampus. We suggest that the ANT has a specific role in memory processes, especially memory recognition, and that memory disturbance should be considered in patients with ANT-DBS and in patients with ANT lesions. ANT is well positioned to serve as a subcortical gate for memory processing in cortical structures.

  19. Nonvolatile “AND,” “OR,” and “NOT” Boolean logic gates based on phase-change memory

    Energy Technology Data Exchange (ETDEWEB)

    Li, Y.; Zhong, Y. P.; Deng, Y. F.; Zhou, Y. X.; Xu, L.; Miao, X. S., E-mail: miaoxs@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074 (China); School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2013-12-21

    Electronic devices or circuits that can implement both logic and memory functions are regarded as the building blocks for future massive parallel computing beyond von Neumann architecture. Here we proposed phase-change memory (PCM)-based nonvolatile logic gates capable of AND, OR, and NOT Boolean logic operations verified in SPICE simulations and circuit experiments. The logic operations are parallel computing and results can be stored directly in the states of the logic gates, facilitating the combination of computing and memory in the same circuit. These results are encouraging for ultralow-power and high-speed nonvolatile logic circuit design based on novel memory devices.

  20. A low-voltage flash memory cell utilizing the gate-injection program/erase method with a recessed channel structure

    International Nuclear Information System (INIS)

    Wu Dake; Huang Ru; Wang Pengfei; Tang Poren; Wang Yangyuan

    2008-01-01

    In this paper, a low-voltage recessed channel SONOS flash memory using the gate-injection program/erase method is proposed and investigated for NAND application. It is shown that the proposed flash memory can achieve 8 V lower programming voltage compared with planar flash memory, due to the effective capacitance coupling and the electric-field enhancement by combining the recessed channel structure and the gate-injection program/erase method. In addition, more than 30% larger threshold voltage window and improved short channel effects can be obtained in the proposed flash memory

  1. Nonvolatile “AND,” “OR,” and “NOT” Boolean logic gates based on phase-change memory

    International Nuclear Information System (INIS)

    Li, Y.; Zhong, Y. P.; Deng, Y. F.; Zhou, Y. X.; Xu, L.; Miao, X. S.

    2013-01-01

    Electronic devices or circuits that can implement both logic and memory functions are regarded as the building blocks for future massive parallel computing beyond von Neumann architecture. Here we proposed phase-change memory (PCM)-based nonvolatile logic gates capable of AND, OR, and NOT Boolean logic operations verified in SPICE simulations and circuit experiments. The logic operations are parallel computing and results can be stored directly in the states of the logic gates, facilitating the combination of computing and memory in the same circuit. These results are encouraging for ultralow-power and high-speed nonvolatile logic circuit design based on novel memory devices

  2. Control of Turing patterns and their usage as sensors, memory arrays, and logic gates

    Science.gov (United States)

    Muzika, František; Schreiber, Igor

    2013-10-01

    We study a model system of three diffusively coupled reaction cells arranged in a linear array that display Turing patterns with special focus on the case of equal coupling strength for all components. As a suitable model reaction we consider a two-variable core model of glycolysis. Using numerical continuation and bifurcation techniques we analyze the dependence of the system's steady states on varying rate coefficient of the recycling step while the coupling coefficients of the inhibitor and activator are fixed and set at the ratios 100:1, 1:1, and 4:5. We show that stable Turing patterns occur at all three ratios but, as expected, spontaneous transition from the spatially uniform steady state to the spatially nonuniform Turing patterns occurs only in the first case. The other two cases possess multiple Turing patterns, which are stabilized by secondary bifurcations and coexist with stable uniform periodic oscillations. For the 1:1 ratio we examine modular spatiotemporal perturbations, which allow for controllable switching between the uniform oscillations and various Turing patterns. Such modular perturbations are then used to construct chemical computing devices utilizing the multiple Turing patterns. By classifying various responses we propose: (a) a single-input resettable sensor capable of reading certain value of concentration, (b) two-input and three-input memory arrays capable of storing logic information, (c) three-input, three-output logic gates performing combinations of logical functions OR, XOR, AND, and NAND.

  3. Highly scalable 3-D NAND-NOR hybrid-type dual bit per cell flash memory devices with an additional cut-off gate

    International Nuclear Information System (INIS)

    Cho, Seongjae; Shim, Wonbo; Park, Ilhan; Kim, Yoon; Park, Byunggook

    2010-01-01

    In this work, a nonvolatile memory (NVM) device of novel structure in 3 dimensions is introduced, and its operation physics is validated. It is based on a pillar structure in which two identical storage nodes are located for dual-bit operation. The two storage nodes on neighboring pillars are controlled by using one common control gate so that the space between silicon pillars can be further reduced. For compatibility with conventional memory operations, an additional cut-off gate is constructed under the common control gate. This is considered as the ultimate form for a 3-D nonvolatile memory device based on a double-gate structure. The underlying physics is explained, and the operational schemes are validated in various aspects by using a numerical device simulation. Also, critical issues in device design for higher reliability are discussed.

  4. Single-Walled Carbon-Nanotubes-Based Organic Memory Structures

    Directory of Open Access Journals (Sweden)

    Sundes Fakher

    2016-09-01

    Full Text Available The electrical behaviour of organic memory structures, based on single-walled carbon-nanotubes (SWCNTs, metal–insulator–semiconductor (MIS and thin film transistor (TFT structures, using poly(methyl methacrylate (PMMA as the gate dielectric, are reported. The drain and source electrodes were fabricated by evaporating 50 nm gold, and the gate electrode was made from 50 nm-evaporated aluminium on a clean glass substrate. Thin films of SWCNTs, embedded within the insulating layer, were used as the floating gate. SWCNTs-based memory devices exhibited clear hysteresis in their electrical characteristics (capacitance–voltage (C–V for MIS structures, as well as output and transfer characteristics for transistors. Both structures were shown to produce reliable and large memory windows by virtue of high capacity and reduced charge leakage. The hysteresis in the output and transfer characteristics, the shifts in the threshold voltage of the transfer characteristics, and the flat-band voltage shift in the MIS structures were attributed to the charging and discharging of the SWCNTs floating gate. Under an appropriate gate bias (1 s pulses, the floating gate is charged and discharged, resulting in significant threshold voltage shifts. Pulses as low as 1 V resulted in clear write and erase states.

  5. FLOAT Project

    DEFF Research Database (Denmark)

    Sørensen, Eigil V.; Aarup, Bendt

    The objective of the FLOAT project is to study the reliability of high-performance fibre-reinforced concrete, also known as Compact Reinforced Composite (CRC), for the floats of wave energy converters. In order to reach a commercial breakthrough, wave energy converters need to achieve a lower price...

  6. Models for Total-Dose Radiation Effects in Non-Volatile Memory

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, Philip Montgomery; Wix, Steven D.

    2017-04-01

    The objective of this work is to develop models to predict radiation effects in non- volatile memory: flash memory and ferroelectric RAM. In flash memory experiments have found that the internal high-voltage generators (charge pumps) are the most sensitive to radiation damage. Models are presented for radiation effects in charge pumps that demonstrate the experimental results. Floating gate models are developed for the memory cell in two types of flash memory devices by Intel and Samsung. These models utilize Fowler-Nordheim tunneling and hot electron injection to charge and erase the floating gate. Erase times are calculated from the models and compared with experimental results for different radiation doses. FRAM is less sensitive to radiation than flash memory, but measurements show that above 100 Krad FRAM suffers from a large increase in leakage current. A model for this effect is developed which compares closely with the measurements.

  7. Differential involvement of glutamate-gated chloride channel splice variants in the olfactory memory processes of the honeybee Apis mellifera.

    Science.gov (United States)

    Démares, Fabien; Drouard, Florian; Massou, Isabelle; Crattelet, Cindy; Lœuillet, Aurore; Bettiol, Célia; Raymond, Valérie; Armengaud, Catherine

    2014-09-01

    Glutamate-gated chloride channels (GluCl) belong to the cys-loop ligand-gated ion channel superfamily and their expression had been described in several invertebrate nervous systems. In the honeybee, a unique gene amel_glucl encodes two alternatively spliced subunits, Amel_GluCl A and Amel_GluCl B. The expression and differential localization of those variants in the honeybee brain had been previously reported. Here we characterized the involvement of each variant in olfactory learning and memory processes, using specific small-interfering RNA (siRNA) targeting each variant. Firstly, the efficacy of the two siRNAs to decrease their targets' expression was tested, both at mRNA and protein levels. The two proteins showed a decrease of their respective expression 24h after injection. Secondly, each siRNA was injected into the brain to test whether or not it affected olfactory memory by using a classical paradigm of conditioning the proboscis extension reflex (PER). Amel_GluCl A was found to be involved only in retrieval of 1-nonanol, whereas Amel_GluCl B was involved in the PER response to 2-hexanol used as a conditioned stimulus or as new odorant. Here for the first time, a differential behavioral involvement of two highly similar GluCl subunits has been characterized in an invertebrate species. Copyright © 2014 Elsevier Inc. All rights reserved.

  8. Ferroelectric-gate field effect transistor memories device physics and applications

    CERN Document Server

    Ishiwara, Hiroshi; Okuyama, Masanori; Sakai, Shigeki; Yoon, Sung-Min

    2016-01-01

    This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handic...

  9. Optimized ONO thickness for multi-level and 2-bit/cell operation for wrapped-select-gate (WSG) SONOS memory

    International Nuclear Information System (INIS)

    Wu, Woei-Cherng; Chao, Tien-Sheng; Yang, Tsung-Yu; Peng, Wu-Chin; Yang, Wen-Luh; Chen, Jian-Hao; Ma, Ming Wen; Lai, Chao-Sung; Lee, Chien-Hsing; Hsieh, Tsung-Min; Liou, Jhyy Cheng; Chen, Tzu Ping; Chen, Chien Hung; Lin, Chih Hung; Chen, Hwi Huang; Ko, Joe

    2008-01-01

    In this paper, highly reliable wrapped-select-gate (WSG) silicon–oxide–nitride–oxide–silicon (SONOS) memory cells with multi-level and 2-bit/cell operation have been successfully demonstrated. The source-side injection mechanism for WSG-SONOS memory with different ONO thickness was thoroughly investigated. The different programming efficiencies of the WSG-SONOS memory under different ONO thicknesses are explained by the lateral electrical field extracted from the simulation results. Furthermore, multi-level storage is easily obtained, and good V TH distribution presented, for the WSG-SONOS memory with optimized ONO thickness. High program/erase speed (10 µs/5 ms) and low programming current (3.5 µA) are used to achieve the multi-level operation with tolerable gate and drain disturbance, negligible second-bit effect, excellent data retention and good endurance performance

  10. MacLiammóir’s Minstrel and Johnston’s Morality: Cultural Memories of the Easter Rising at the Dublin Gate Theatre

    NARCIS (Netherlands)

    Beuken, R.H. van den

    2015-01-01

    This article explores how Micheál MacLiammóir and Denis Johnston attempted to perform cultural memories of the Easter Rising at the Dublin Gate Theatre and thereby articulated their respective views on a colonial past that had to be reassessed anew, on the one hand, and a postcolonial future that

  11. Floating barrier

    Energy Technology Data Exchange (ETDEWEB)

    1968-05-06

    This floating barrier consists of relatively long elements which can be connected to form a practically continuous assembly. Each element consists of an inflatable tube with an apron of certain height, made of impregnated fabric which is resistant to ocean water and also to hydrocarbons. Means for connecting one element to the following one, and means for attaching ballast to the apron are also provided.

  12. Ultra-Low Voltage Class AB Switched Current Memory Cell

    DEFF Research Database (Denmark)

    Igor, Mucha

    1996-01-01

    This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process with thr......This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process...... with threshold voltages of 0.9V. Both hand calculations and PSPICE simulations showed that the cells designed allowed a maximum signal range better than +/-13 micoamp, with a supply voltage down to 1V and a quiescent bias current of 1 microamp, resulting in a very high current efficiency and effective power...

  13. Assessment of motor function, sensory motor gating and recognition memory in a novel BACHD transgenic rat model for huntington disease.

    Science.gov (United States)

    Abada, Yah-Se K; Nguyen, Huu Phuc; Schreiber, Rudy; Ellenbroek, Bart

    2013-01-01

    Huntington disease (HD) is frequently first diagnosed by the appearance of motor symptoms; the diagnosis is subsequently confirmed by the presence of expanded CAG repeats (> 35) in the HUNTINGTIN (HTT) gene. A BACHD rat model for HD carrying the human full length mutated HTT with 97 CAG-CAA repeats has been established recently. Behavioral phenotyping of BACHD rats will help to determine the validity of this model and its potential use in preclinical drug discovery studies. The present study seeks to characterize the progressive emergence of motor, sensorimotor and cognitive deficits in BACHD rats. Wild type and transgenic rats were tested from 1 till 12 months of age. Motor tests were selected to measure spontaneous locomotor activity (open field) and gait coordination. Sensorimotor gating was assessed in acoustic startle response paradigms and recognition memory was evaluated in an object recognition test. Transgenic rats showed hyperactivity at 1 month and hypoactivity starting at 4 months of age. Motor coordination imbalance in a Rotarod test was present at 2 months and gait abnormalities were seen in a Catwalk test at 12 months. Subtle sensorimotor changes were observed, whereas object recognition was unimpaired in BACHD rats up to 12 months of age. The current BACHD rat model recapitulates certain symptoms from HD patients, especially the marked motor deficits. A subtle neuropsychological phenotype was found and further studies are needed to fully address the sensorimotor phenotype and the potential use of BACHD rats for drug discovery purposes.

  14. Nonvolatile memory thin-film transistors using biodegradable chicken albumen gate insulator and oxide semiconductor channel on eco-friendly paper substrate.

    Science.gov (United States)

    Kim, So-Jung; Jeon, Da-Bin; Park, Jung-Ho; Ryu, Min-Ki; Yang, Jong-Heon; Hwang, Chi-Sun; Kim, Gi-Heon; Yoon, Sung-Min

    2015-03-04

    Nonvolatile memory thin-film transistors (TFTs) fabricated on paper substrates were proposed as one of the eco-friendly electronic devices. The gate stack was composed of chicken albumen gate insulator and In-Ga-Zn-O semiconducting channel layers. All the fabrication processes were performed below 120 °C. To improve the process compatibility of the synthethic paper substrate, an Al2O3 thin film was introduced as adhesion and barrier layers by atomic layer deposition. The dielectric properties of biomaterial albumen gate insulator were also enhanced by the preparation of Al2O3 capping layer. The nonvolatile bistabilities were realized by the switching phenomena of residual polarization within the albumen thin film. The fabricated device exhibited a counterclockwise hysteresis with a memory window of 11.8 V, high on/off ratio of approximately 1.1 × 10(6), and high saturation mobility (μsat) of 11.5 cm(2)/(V s). Furthermore, these device characteristics were not markedly degraded even after the delamination and under the bending situration. When the curvature radius was set as 5.3 cm, the ION/IOFF ratio and μsat were obtained to be 5.9 × 10(6) and 7.9 cm(2)/(V s), respectively.

  15. Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope.

    Science.gov (United States)

    Bae, Jong-Ho; Lee, Jong-Ho

    2016-05-01

    A steep subthreshold slope characteristic is achieved through p-GaN gate HEMT with dual-gate structure. Obtained subthreshold slope is less than 120 μV/dec. Based on the measured and simulated data obtained from single-gate device, breakdown of parasitic floating-base bipolar transistor and floating gate charged with holes are responsible to increase abruptly in drain current. In the dual-gate device, on-current degrades with high temperature but subthreshold slope is not changed. To observe the switching speed of dual-gate device and transient response of drain current are measured. According to the transient responses of drain current, switching speed of the dual-gate device is about 10(-5) sec.

  16. Logic gates realized by nonvolatile GeTe/Sb2Te3 super lattice phase-change memory with a magnetic field input

    Science.gov (United States)

    Lu, Bin; Cheng, Xiaomin; Feng, Jinlong; Guan, Xiawei; Miao, Xiangshui

    2016-07-01

    Nonvolatile memory devices or circuits that can implement both storage and calculation are a crucial requirement for the efficiency improvement of modern computer. In this work, we realize logic functions by using [GeTe/Sb2Te3]n super lattice phase change memory (PCM) cell in which higher threshold voltage is needed for phase change with a magnetic field applied. First, the [GeTe/Sb2Te3]n super lattice cells were fabricated and the R-V curve was measured. Then we designed the logic circuits with the super lattice PCM cell verified by HSPICE simulation and experiments. Seven basic logic functions are first demonstrated in this letter; then several multi-input logic gates are presented. The proposed logic devices offer the advantages of simple structures and low power consumption, indicating that the super lattice PCM has the potential in the future nonvolatile central processing unit design, facilitating the development of massive parallel computing architecture.

  17. Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3 and ferroelectric polymer

    International Nuclear Information System (INIS)

    Yoon, Sung-Min; Yang, Shin-Hyuk; Ko Park, Sang-Hee; Jung, Soon-Won; Cho, Doo-Hee; Byun, Chun-Won; Kang, Seung-Youl; Hwang, Chi-Sun; Yu, Byoung-Gon

    2009-01-01

    Poly(vinylidene fluoride trifluoroethylene) and ZnO were employed for nonvolatile memory thin film transistors as ferroelectric gate insulator and oxide semiconducting channel layers, respectively. It was proposed that the thickness of the ZnO layer be carefully controlled for realizing the lower programming voltage, because the serially connected capacitor by the formation of a fully depleted ZnO channel had a critical effect on the off programming voltage. The fabricated memory transistor with Al/P(VDF-TrFE) (80 nm)/Al 2 O 3 (4 nm)/ZnO (5 nm) exhibits encouraging behaviour such as a memory window of 3.8 V at the gate voltage of -10 to 12 V, and 10 7 on/off ratio, and a gate leakage current of 10 -11 A.

  18. Growth of Si nanocrystals on alumina and integration in memory devices

    Science.gov (United States)

    Baron, T.; Fernandes, A.; Damlencourt, J. F.; De Salvo, B.; Martin, F.; Mazen, F.; Haukka, S.

    2003-06-01

    We present a detailed study of the growth of Si quantum dots (Si QDs) by low pressure chemical vapor deposition on alumina dielectric deposited by atomic layer deposition. The Si QDs density is very high, 1012 cm-2, for a mean diameter between 5 and 10 nm. Al2O3/Si QD stacks have been integrated in memory devices as granular floating gate. The devices demonstrate good charge storage and data retention characteristics.

  19. A gate drive circuit for gate-turn-off (GTO) devices in series stack

    International Nuclear Information System (INIS)

    Despe, O.

    1999-01-01

    A gate-turn-off (GTO) switch is under development at the Advanced Photon Source as a replacement for a thyratron switch in high power pulsed application. The high voltage in the application requires multiple GTOs connected in series. One component that is critical to the success of GTO operation is the gate drive circuit. The gate drive circuit has to provide fast high-current pulses to the GTO gate for fast turn-on and turn-off. It also has to be able to operate while floating at high voltage. This paper describes a gate drive circuit that meets these requirements

  20. Total Ionizing Dose Influence on the Single Event Effect Sensitivity in Samsung 8Gb NAND Flash Memories

    Science.gov (United States)

    Edmonds, Larry D.; Irom, Farokh; Allen, Gregory R.

    2017-08-01

    A recent model provides risk estimates for the deprogramming of initially programmed floating gates via prompt charge loss produced by an ionizing radiation environment. The environment can be a mixture of electrons, protons, and heavy ions. The model requires several input parameters. This paper extends the model to include TID effects in the control circuitry by including one additional parameter. Parameters intended to produce conservative risk estimates for the Samsung 8 Gb SLC NAND flash memory are given, subject to some qualifications.

  1. Effects of thickness and geometric variations in the oxide gate stack on the nonvolatile memory behaviors of charge-trap memory thin-film transistors

    Science.gov (United States)

    Bak, Jun Yong; Kim, So-Jung; Byun, Chun-Won; Pi, Jae-Eun; Ryu, Min-Ki; Hwang, Chi Sun; Yoon, Sung-Min

    2015-09-01

    Device designs of charge-trap oxide memory thin-film transistors (CTM-TFTs) were investigated to enhance their nonvolatile memory performances. The first strategy was to optimize the film thicknesses of the tunneling and charge-trap (CT) layers in order to meet requirements of both higher operation speed and longer retention time. While the program speed and memory window were improved for the device with a thinner tunneling layer, a long retention time was obtained only for the device with a tunneling layer thicker than 5 nm. The carrier concentration and charge-trap densities were optimized in the 30-nm-thick CT layer. It was observed that 10-nm-thick tunneling, 30-nm-thick CT, and 50-nm-thick blocking layers were the best configuration for our proposed CTM-TFTs, where a memory on/off margin higher than 107 was obtained, and a memory margin of 6.6 × 103 was retained even after the lapse of 105 s. The second strategy was to examine the effects of the geometrical relations between the CT and active layers for the applications of memory elements embedded in circuitries. The CTM-TFTs fabricated without an overlap between the CT layer and the drain electrode showed an enhanced program speed by the reduced parasitic capacitance. The drain-bias disturbance for the memory off-state was effectively suppressed even when a higher read-out drain voltage was applied. Appropriate device design parameters, such as the film thicknesses of each component layer and the geometrical relations between them, can improve the memory performances and expand the application fields of the proposed CTM-TFTs.

  2. Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications

    Science.gov (United States)

    Hong, Augustin Jinwoo

    Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.

  3. Floating offshore turbines

    DEFF Research Database (Denmark)

    Tande, John Olav Giæver; Merz, Karl; Schmidt Paulsen, Uwe

    2014-01-01

    metric of energy production per unit steel mass. Floating offshore wind turbines represent a promising technology. The successful operation of HyWind and WindFloat in full scale demonstrates a well advanced technology readiness level, where further development will go into refining the concepts, cost...

  4. Nonvolatile ferroelectric memory based on PbTiO3 gated single-layer MoS2 field-effect transistor

    Science.gov (United States)

    Shin, Hyun Wook; Son, Jong Yeog

    2018-01-01

    We fabricated ferroelectric non-volatile random access memory (FeRAM) based on a field effect transistor (FET) consisting of a monolayer MoS2 channel and a ferroelectric PbTiO3 (PTO) thin film of gate insulator. An epitaxial PTO thin film was deposited on a Nb-doped SrTiO3 (Nb:STO) substrate via pulsed laser deposition. A monolayer MoS2 sheet was exfoliated from a bulk crystal and transferred to the surface of the PTO/Nb:STO. Structural and surface properties of the PTO thin film were characterized by X-ray diffraction and atomic force microscopy, respectively. Raman spectroscopy analysis was performed to identify the single-layer MoS2 sheet on the PTO/Nb:STO. We obtained mobility value (327 cm2/V·s) of the MoS2 channel at room temperature. The MoS2-PTO FeRAM FET showed a wide memory window with 17 kΩ of resistance variation which was attributed to high remnant polarization of the epitaxially grown PTO thin film. According to the fatigue resistance test for the FeRAM FET, however, the resistance states gradually varied during the switching cycles of 109. [Figure not available: see fulltext.

  5. Capacitorless one-transistor dynamic random-access memory based on asymmetric double-gate Ge/GaAs-heterojunction tunneling field-effect transistor with n-doped boosting layer and drain-underlap structure

    Science.gov (United States)

    Yoon, Young Jun; Seo, Jae Hwa; Kang, In Man

    2018-04-01

    In this work, we present a capacitorless one-transistor dynamic random-access memory (1T-DRAM) based on an asymmetric double-gate Ge/GaAs-heterojunction tunneling field-effect transistor (TFET) for DRAM applications. The n-doped boosting layer and gate2 drain-underlap structure is employed in the device to obtain an excellent 1T-DRAM performance. The n-doped layer inserted between the source and channel regions improves the sensing margin because of a high rate of increase in the band-to-band tunneling (BTBT) probability. Furthermore, because the gate2 drain-underlap structure reduces the recombination rate that occurs between the gate2 and drain regions, a device with a gate2 drain-underlap length (L G2_D-underlap) of 10 nm exhibited a longer retention performance. As a result, by applying the n-doped layer and gate2 drain-underlap structure, the proposed device exhibited not only a high sensing margin of 1.11 µA/µm but also a long retention time of greater than 100 ms at a temperature of 358 K (85 °C).

  6. The Role of Anterior Nuclei of the Thalamus: A Subcortical Gate in Memory Processing: An Intracerebral Recording Study

    Czech Academy of Sciences Publication Activity Database

    Štillová, K.; Jurák, Pavel; Chládek, Jan; Chrastina, J.; Halámek, Josef; Bočková, M.; Goldemundová, S.; Říha, I.; Rektor, I.

    2015-01-01

    Roč. 10, č. 11 (2015), e140778:1-13 E-ISSN 1932-6203 R&D Projects: GA MŠk(CZ) LO1212 Institutional support: RVO:68081731 Keywords : anterior nuclei * thalamus * hippocampus * visual * verbal memory * DBS * P300 * ERP * intracerebral EEG Subject RIV: BH - Optics, Masers, Lasers Impact factor: 3.057, year: 2015

  7. The Role of Anterior Nuclei of the Thalamus: A Subcortical Gate in Memory Processing: An Intracerebral Recording Study

    Czech Academy of Sciences Publication Activity Database

    Štillová, K.; Jurák, Pavel; Chládek, Jan; Chrastina, J.; Halámek, Josef; Bočková, M.; Goldemundová, S.; Říha, I.; Rektor, I.

    2015-01-01

    Roč. 56, S1 (2015), s. 162 ISSN 0013-9580. [International Epilepsy Congress /31./. 05.09.2015-09.09.2015, Istanbul] Institutional support: RVO:68081731 Keywords : anterior nuclei * thalamus * hippocampus * visual * verbal memory Subject RIV: BH - Optics, Masers, Lasers

  8. Bilateral Floating Hip and Floating Knee: a Rare Complex Injury ...

    African Journals Online (AJOL)

    We report a rare complex injury of a 45-year-old man who sustained a bilateral floating hip and floating knee and hospitalised in our service six days after a traffic accident. The floating knees were open type III and II of Cauchoix score in phase of suppuration. He also presented with a floating ankle on the right side.

  9. Load-Dependent Increases in Delay-Period Alpha-Band Power Track the Gating of Task-Irrelevant Inputs to Working Memory

    Directory of Open Access Journals (Sweden)

    Andrew J. Heinz

    2017-05-01

    Full Text Available Studies exploring the role of neural oscillations in cognition have revealed sustained increases in alpha-band power (ABP during the delay period of verbal and visual working memory (VWM tasks. There have been various proposals regarding the functional significance of such increases, including the inhibition of task-irrelevant cortical areas as well as the active retention of information in VWM. The present study examines the role of delay-period ABP in mediating the effects of interference arising from on-going visual processing during a concurrent VWM task. Specifically, we reasoned that, if set-size dependent increases in ABP represent the gating out of on-going task-irrelevant visual inputs, they should be predictive with respect to some modulation in visual evoked potentials resulting from a task-irrelevant delay period probe stimulus. In order to investigate this possibility, we recorded the electroencephalogram while subjects performed a change detection task requiring the retention of two or four novel shapes. On a portion of trials, a novel, task-irrelevant bilateral checkerboard probe was presented mid-way through the delay. Analyses focused on examining correlations between set-size dependent increases in ABP and changes in the magnitude of the P1, N1 and P3a components of the probe-evoked response and how such increases might be related to behavior. Results revealed that increased delay-period ABP was associated with changes in the amplitude of the N1 and P3a event-related potential (ERP components, and with load-dependent changes in capacity when the probe was presented during the delay. We conclude that load-dependent increases in ABP likely play a role in supporting short-term retention by gating task-irrelevant sensory inputs and suppressing potential sources of disruptive interference.

  10. FLOAT Project - Task 1

    DEFF Research Database (Denmark)

    Marchalot, Tanguy; Kofoed, Jens Peter; Sørensen, Eigil V.

    .com, 2011). CRC floats could be a very cost-effective technology with enhanced loading capacity and environmental resistance, and very low maintenance requirements, affecting directly the final energy price. The project involves DEXA Wave Energy Ltd, Wave Star A/S, Aalborg University and Hi-Con A......The objective of the FLOAT project is to study the reliability of high-performance fibre-reinforced concrete, also known as Compact Reinforced Composite (CRC), for the floats of wave energy converters. In order to reach commercial breakthrough, wave energy converters need to achieve a lower price...

  11. Micromechanisms with floating pivot

    Science.gov (United States)

    Garcia, Ernest J.

    2001-03-06

    A new class of tilting micromechanical mechanisms have been developed. These new mechanisms use floating pivot structures to relieve some of the problems encountered in the use of solid flexible pivots.

  12. Memory

    Science.gov (United States)

    ... it has to decide what is worth remembering. Memory is the process of storing and then remembering this information. There are different types of memory. Short-term memory stores information for a few ...

  13. Floating polygon soup

    OpenAIRE

    Colleu , Thomas; Morin , Luce; Pateux , Stéphane; Labit , Claude

    2011-01-01

    International audience; This paper presents a new representation called floating polygon soup for applications like 3DTV and FTV (Free Viewpoint Television). This representation is based on 3D polygons and takes as input MVD data. It extends the previously proposed polygon soup representation which is appropriate for both compression, transmission and rendering stages. The floating polygon soup conserves these advantages while also taking into account misalignments at the view synthesis stage...

  14. Offshore floating windmills

    International Nuclear Information System (INIS)

    1993-10-01

    The aim was to produce a general survey of the profitability of establishing floating offshore wind turbine arrays and to compare this with the cost and profitability of constructing offshore arrays with fixed foundations and arrays located on land sites. Aspects of design in all cases are described, also into relation to the special demands placed on dimensioning in relation to the types of location and foundation. The costs of the offshore arrays are evaluated in relation to capacity under conditions in Danish waters. The advantage of floating arrays is that they can be placed far out to sea where they can not be seen from the coast and thus not be considered to spoil the marine view. But as the water gets deeper the cost of floating foundations rises. It was found that it would not be technologically profitable to establish floating arrays at a depth of less than 30 - 40 meters which means that only the outer Danish waters can be taken into consideration. For depths of up to 70 meters, individual floating bases are more expensive than fixed ones but would be cheaper if a number of windmills could share the same anchor. For depths of more than 70 meters floating foundations would be the cheapest. The cost is dependent on the depth and distance from the coast and also on wind conditions. The main conclusion is that currently the cost of establishing wind turbine arrays in deeper outer waters on floating foundations is comparable to that of arrays sited at inner waters on solid foundations placed on the sea bed. (AB) (20 refs.)

  15. Linear gate

    International Nuclear Information System (INIS)

    Suwono.

    1978-01-01

    A linear gate providing a variable gate duration from 0,40μsec to 4μsec was developed. The electronic circuity consists of a linear circuit and an enable circuit. The input signal can be either unipolar or bipolar. If the input signal is bipolar, the negative portion will be filtered. The operation of the linear gate is controlled by the application of a positive enable pulse. (author)

  16. Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack

    Directory of Open Access Journals (Sweden)

    Shi-Bing Qian

    2015-12-01

    Full Text Available Amorphous indium-gallium-zinc oxide (a-IGZO thin-film transistor (TFT memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack under a maximal processing temperature of 300 oC. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at −17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at −14 V, a memory window of 2.08 V was still maintained after 103 P/E cycles, and a memory window of 1.1 V was retained after 105 s retention time.

  17. Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al{sub 2}O{sub 3}/Pt nanocrystals/Al{sub 2}O{sub 3} gate stack

    Energy Technology Data Exchange (ETDEWEB)

    Qian, Shi-Bing; Zhang, Wen-Peng; Liu, Wen-Jun; Ding, Shi-Jin, E-mail: sjding@fudan.edu.cn [State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433 (China)

    2015-12-15

    Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al{sub 2}O{sub 3}/Pt nanocrystals/Al{sub 2}O{sub 3} gate stack under a maximal processing temperature of 300 {sup o}C. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at −17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E) characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at −14 V, a memory window of 2.08 V was still maintained after 10{sup 3} P/E cycles, and a memory window of 1.1 V was retained after 10{sup 5} s retention time.

  18. Period1 gates the circadian modulation of memory-relevant signaling in mouse hippocampus by regulating the nuclear shuttling of the CREB kinase pP90RSK.

    Science.gov (United States)

    Rawashdeh, Oliver; Jilg, Antje; Maronde, Erik; Fahrenkrug, Jan; Stehle, Jörg H

    2016-09-01

    Memory performance varies over a 24-h day/night cycle. While the detailed underlying mechanisms are yet unknown, recent evidence suggests that in the mouse hippocampus, rhythmic phosphorylation of mitogen-activated protein kinase (MAPK) and cyclic adenosine monophosphate response element-binding protein (CREB) are central to the circadian (~ 24 h) regulation of learning and memory. We recently identified the clock protein PERIOD1 (PER1) as a vehicle that translates information encoding time of day to hippocampal plasticity. We here elaborate how PER1 may gate the sensitivity of memory-relevant hippocampal signaling pathways. We found that in wild-type mice (WT), spatial learning triggers CREB phosphorylation only during the daytime, and that this effect depends on the presence of PER1. The time-of-day-dependent induction of CREB phosphorylation can be reproduced pharmacologically in acute hippocampal slices prepared from WT mice, but is absent in preparations made from Per1-knockout (Per1(-/-) ) mice. We showed that the PER1-dependent CREB phosphorylation is regulated downstream of MAPK. Stimulation of WT hippocampal neurons triggered the co-translocation of PER1 and the CREB kinase pP90RSK (pMAPK-activated ribosomal S6 kinase) into the nucleus. In hippocampal neurons from Per1(-/-) mice, however, pP90RSK remained perinuclear. A co-immunoprecipitation assay confirmed a high-affinity interaction between PER1 and pP90RSK. Knocking down endogenous PER1 in hippocampal cells inhibited adenylyl cyclase-dependent CREB activation. Taken together, the PER1-dependent modulation of cytoplasmic-to-nuclear signaling in the murine hippocampus provides a molecular explanation for how the circadian system potentially shapes a temporal framework for daytime-dependent memory performance, and adds a novel facet to the versatility of the clock gene protein PER1. We provide evidence that the circadian clock gene Period1 (Per1) regulates CREB phosphorylation in the mouse hippocampus

  19. Deep Gate Recurrent Neural Network

    Science.gov (United States)

    2016-11-22

    and Fred Cummins. Learning to forget: Continual prediction with lstm . Neural computation, 12(10):2451–2471, 2000. Alex Graves. Generating sequences...DSGU) and Simple Gated Unit (SGU), which are structures for learning long-term dependencies. Compared to traditional Long Short-Term Memory ( LSTM ) and...Gated Recurrent Unit (GRU), both structures require fewer parameters and less computation time in sequence classification tasks. Unlike GRU and LSTM

  20. Compound floating pivot micromechanisms

    Science.gov (United States)

    Garcia, Ernest J.

    2001-04-24

    A new class of tilting micromechanical mechanisms have been developed. These new mechanisms use compound floating pivot structures to attain far greater tilt angles than are practical using other micromechanical techniques. The new mechanisms are also capable of bi-directional tilt about multiple axes.

  1. The floating water bridge

    International Nuclear Information System (INIS)

    Fuchs, Elmar C; Woisetschlaeger, Jakob; Gatterer, Karl; Maier, Eugen; Pecnik, Rene; Holler, Gert; Eisenkoelbl, Helmut

    2007-01-01

    When high voltage is applied to distilled water filled in two glass beakers which are in contact, a stable water connection forms spontaneously, giving the impression of a floating water bridge. A detailed experimental analysis reveals static and dynamic structures as well as heat and mass transfer through this bridge

  2. A 600-µW ultra-low-power associative processor for image pattern recognition employing magnetic tunnel junction-based nonvolatile memories with autonomic intelligent power-gating scheme

    Science.gov (United States)

    Ma, Yitao; Miura, Sadahiko; Honjo, Hiroaki; Ikeda, Shoji; Hanyu, Takahiro; Ohno, Hideo; Endoh, Tetsuo

    2016-04-01

    A novel associative processor using magnetic tunnel junction (MTJ)-based nonvolatile memories has been proposed and fabricated under a 90 nm CMOS/70 nm perpendicular-MTJ (p-MTJ) hybrid process for achieving the exceptionally low-power performance of image pattern recognition. A four-transistor 2-MTJ (4T-2MTJ) spin transfer torque magnetoresistive random access memory was adopted to completely eliminate the standby power. A self-directed intelligent power-gating (IPG) scheme specialized for this associative processor is employed to optimize the operation power by only autonomously activating currently accessed memory cells. The operations of a prototype chip at 20 MHz are demonstrated by measurement. The proposed processor can successfully carry out single texture pattern matching within 6.5 µs using 128-dimension bag-of-feature patterns, and the measured average operation power of the entire processor core is only 600 µW. Compared with the twin chip designed with 6T static random access memory, 91.2% power reductions are achieved. More than 88.0% power reductions are obtained compared with the latest associative memories. The further power performance analysis is discussed in detail, which verifies the special superiority of the proposed processor in power consumption for large-capacity memory-based VLSI systems.

  3. Cognitive mechanisms associated with auditory sensory gating

    Science.gov (United States)

    Jones, L.A.; Hills, P.J.; Dick, K.M.; Jones, S.P.; Bright, P.

    2016-01-01

    Sensory gating is a neurophysiological measure of inhibition that is characterised by a reduction in the P50 event-related potential to a repeated identical stimulus. The objective of this work was to determine the cognitive mechanisms that relate to the neurological phenomenon of auditory sensory gating. Sixty participants underwent a battery of 10 cognitive tasks, including qualitatively different measures of attentional inhibition, working memory, and fluid intelligence. Participants additionally completed a paired-stimulus paradigm as a measure of auditory sensory gating. A correlational analysis revealed that several tasks correlated significantly with sensory gating. However once fluid intelligence and working memory were accounted for, only a measure of latent inhibition and accuracy scores on the continuous performance task showed significant sensitivity to sensory gating. We conclude that sensory gating reflects the identification of goal-irrelevant information at the encoding (input) stage and the subsequent ability to selectively attend to goal-relevant information based on that previous identification. PMID:26716891

  4. Nonvolatile memory characteristics in metal-oxide-semiconductors containing metal nanoparticles fabricated by using a unique laser irradiation method

    International Nuclear Information System (INIS)

    Yang, JungYup; Yoon, KapSoo; Kim, JuHyung; Choi, WonJun; Do, YoungHo; Kim, ChaeOk; Hong, JinPyo

    2006-01-01

    Metal-oxide-semiconductor (MOS) capacitors with metal nanoparticles (Co NP) were successfully fabricated by utilizing an external laser exposure technique for application of non-volatile memories. Images of high-resolution transmission electron microscopy reveal that the spherically shaped Co NP are clearly embedded in the gate oxide layer. Capacitance-voltage measurements exhibit typical charging and discharging effects with a large flat-band shift. The effects of the tunnel oxide thickness and the different tunnel materials are analyzed using capacitance-voltage and retention characteristics. In addition, the memory characteristics of the NP embedded in a high-permittivity material are investigated because the thickness of conventionally available SiO 2 gates is approaching the quantum tunneling limit as devices are scaled down. Finally, the suitability of NP memory devices for nonvolatile memory applications is also discussed. The present results suggest that our unique laser exposure technique holds promise for the NP formation as floating gate elements in nonvolatile NP memories and that the quality of the tunnel oxide is very important for enhancing the retention properties of nonvolatile memory.

  5. Float level indicator

    International Nuclear Information System (INIS)

    Grishchuk, M.Kh.; Laptev, A.G.; Pashkov, V.A.

    1980-01-01

    Specially developed level indicator is suggested with differential to-transformer converter of the float motion, operating in line with a movable electronic block, intended for indicating the level of the dissociating nitrogen tetroxide liquid phase. On the basis of the indicator elements the device is realized to measure the time of calibrated volume fillino. in by liquid nitrogen tetroxide in steady state operation of the experimental bench-marks [ru

  6. The floating knee

    DEFF Research Database (Denmark)

    Muñoz Vives, Josep; Bel, Jean-Christophe; Capel Agundez, Arantxa

    2016-01-01

    In 1975, Blake and McBryde established the concept of 'floating knee' to describe ipsilateral fractures of the femur and tibia.1This combination is much more than a bone lesion; the mechanism is usually a high-energy trauma in a patient with multiple injuries and a myriad of other lesions...... fixation when both fractures (femoral and tibial) are extra-articular.Plates are the 'standard of care' in cases with articular fractures.A combination of implants are required by 40% of floating knees.Associated ligamentous and meniscal lesions are common, but may be irrelevant in the case of an intra......-articular fracture which gives the worst prognosis for this type of lesion. Cite this article: Muñoz Vives K, Bel J-C, Capel Agundez A, Chana Rodríguez F, Palomo Traver J, Schultz-Larsen M, Tosounidis, T. The floating knee.EFORT Open Rev2016;1:375-382. DOI: 10.1302/2058-5241.1.000042....

  7. Subattoampere current induced by single ions in silicon oxide layers of nonvolatile memory cells

    International Nuclear Information System (INIS)

    Cellere, G.; Paccagnella, A.; Larcher, L.; Visconti, A.; Bonanomi, M.

    2006-01-01

    A single ion impinging on a thin silicon dioxide layer generates a number of electron/hole pairs proportional to its linear energy transfer coefficient. Defects generated by recombination can act as a conductive path for electrons that cross the oxide barrier, thanks to a multitrap-assisted mechanism. We present data on the dependence of this phenomenon on the oxide thickness by using floating gate memory arrays. The tiny number of excess electrons stored in these devices allows for extremely high sensitivity, impossible with any direct measurement of oxide leakage current. Results are of particular interest for next generation devices

  8. Memory, microprocessor, and ASIC

    CERN Document Server

    Chen, Wai-Kai

    2003-01-01

    System Timing. ROM/PROM/EPROM. SRAM. Embedded Memory. Flash Memories. Dynamic Random Access Memory. Low-Power Memory Circuits. Timing and Signal Integrity Analysis. Microprocessor Design Verification. Microprocessor Layout Method. Architecture. ASIC Design. Logic Synthesis for Field Programmable Gate Array (EPGA) Technology. Testability Concepts and DFT. ATPG and BIST. CAD Tools for BIST/DFT and Delay Faults.

  9. Memory

    OpenAIRE

    Wager, Nadia

    2017-01-01

    This chapter will explore a response to traumatic victimisation which has divided the opinions of psychologists at an exponential rate. We will be examining amnesia for memories of childhood sexual abuse and the potential to recover these memories in adulthood. Whilst this phenomenon is generally accepted in clinical circles, it is seen as highly contentious amongst research psychologists, particularly experimental cognitive psychologists. The chapter will begin with a real case study of a wo...

  10. Ipsilateral Floating Hip and Floating Knee – A Rare Entity

    Directory of Open Access Journals (Sweden)

    Yashavantha Kumar

    2013-04-01

    Full Text Available Introduction: Ipsilateral floating hip and floating knee are very rare injuries. These injuries so uncommon that only three cases of similar kind have been reported. These injuries are due to high velocity injuries following motor vehicle accidents. Management of such complex injuries is a challenging task even in experienced hands as there are no standard treatment guidelines for such fractures. Case Report: We hereby report a 20 yr old male who sustained ipsilateral floating hip and ipsilateral floating knee injuries following motor vehicle accident. Patient was stabilized initially and later taken up for surgery. Patient was treated with interlocking nail for femur and tibia in the same sitting whereas acetabulam fracture was managed conservatively. At five months all the fractures united well with restoration of good range of motion in both hip and knee. Conclusion: Ipsilateral floating knee and floating hip are very rare injuries seen following high velocity motor vehicle accidents. There are no standard guidelines for treatment of those fractures as only a few cases of similar kind have been reported in literature. Early fixation and aggressive mobilization ensures fracture union and fewer complications. Keywords: Floating hip, Floating Knee, Ipsilateral.

  11. Fabrication and electrical characterization of a MOS memory device containing self-assembled metallic nanoparticles

    Science.gov (United States)

    Sargentis, Ch.; Giannakopoulos, K.; Travlos, A.; Tsamakis, D.

    2007-04-01

    Floating gate devices with nanoparticles embedded in dielectrics have recently attracted much attention due to the fact that these devices operate as non-volatile memories with high speed, high density and low power consumption. In this paper, memory devices containing gold (Au) nanoparticles have been fabricated using e-gun evaporation. The Au nanoparticles are deposited on a very thin SiO 2 layer and are then fully covered by a HfO 2 layer. The HfO 2 is a high- k dielectric and gives good scalability to the fabricated devices. We studied the effect of the deposition parameters to the size and the shape of the Au nanoparticles using capacitance-voltage and conductance-voltage measurements, we demonstrated that the fabricated device can indeed operate as a low-voltage memory device.

  12. CMOS gate array characterization procedures

    Science.gov (United States)

    Spratt, James P.

    1993-09-01

    Present procedures are inadequate for characterizing the radiation hardness of gate array product lines prior to personalization because the selection of circuits to be used, from among all those available in the manufacturer's circuit library, is usually uncontrolled. (Some circuits are fundamentally more radiation resistant than others.) In such cases, differences in hardness can result between different designs of the same logic function. Hardness also varies because many gate arrays feature large custom-designed megacells (e.g., microprocessors and random access memories-MicroP's and RAM's). As a result, different product lines cannot be compared equally. A characterization strategy is needed, along with standardized test vehicle(s), methodology, and conditions, so that users can make informed judgments on which gate arrays are best suited for their needs. The program described developed preferred procedures for the radiation characterization of gate arrays, including a gate array evaluation test vehicle, featuring a canary circuit, designed to define the speed versus hardness envelope of the gate array. A multiplier was chosen for this role, and a baseline multiplier architecture is suggested that could be incorporated into an existing standard evaluation circuit chip.

  13. Memories.

    Science.gov (United States)

    Brand, Judith, Ed.

    1998-01-01

    This theme issue of the journal "Exploring" covers the topic of "memories" and describes an exhibition at San Francisco's Exploratorium that ran from May 22, 1998 through January 1999 and that contained over 40 hands-on exhibits, demonstrations, artworks, images, sounds, smells, and tastes that demonstrated and depicted the biological,…

  14. Floating Silicon Method

    Energy Technology Data Exchange (ETDEWEB)

    Kellerman, Peter

    2013-12-21

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  15. Negative effect of Au nanoparticles on an IGZO TFT-based nonvolatile memory device

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Myunghoon; Yoo, Gwangwe; Lee, Jongtaek; Jeong, Seokwon; Roh, Yonghan; Park, Jinhong; Kwon, Namyong [Sungkyunkwan University, Suwon (Korea, Republic of); Jung, Wooshik [Stanford University, Stanford, CA (United States)

    2014-02-15

    In this letter, the electrical characteristics of nonvolatile memory devices based on back gate type indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are investigated in terms of the Au nanoparticles (NPs) employed in the floating gate-stack of the device. The size of the Au NPs is controlled using a by 500 .deg. C annealing process after the Au thin-film deposition. The size and the roughness of the Au NPs were observed by using scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. In order to analyze the electrical properties according to Au NP size, we measured the current-voltage (I{sub D}-V{sub G}) characteristics of the nonvolatile memory devices fabricated without Au NPs and with Au NPs of various sizes. The size of the Au NP increased, so did the surface roughness of the gate. This resulted in increased carrier scattering, which subsequently degraded the on-current of the memory device. In addition, inter-diffusion between the Au and the α-IGZO through the non-uniform Al{sub 2}O{sub 3} tunneling layer seemed to further degrade the device performance.

  16. Germanium nanoparticles grown at different deposition times for memory device applications

    International Nuclear Information System (INIS)

    Mederos, M.; Mestanza, S.N.M.; Lang, R.; Doi, I.; Diniz, J.A.

    2016-01-01

    In the present work, circular Metal-Oxide-Semiconductor capacitors with 200 μm of diameter and germanium (Ge) nanoparticles (NPs) embedded in the gate oxide are studied for memory applications. Optimal process parameters are investigated for Ge NPs growing by low pressure chemical vapor deposition at different deposition times. Photoluminescence measurements showed room-temperature size-dependent green-red region bands attributed to quantum confinement effects present in the NPs. High-frequency capacitance versus voltage measurements demonstrated the memory effects on the MOS structures due to the presence of Ge NPs in the gate oxide acting as discrete floating gates. Current versus voltage measurements confirmed the Fowler-Nordheim tunneling as the programming mechanism of the devices. - Highlights: • Ge nanoparticles with high density and uniforms sizes were obtained by LPCVD. • Room-temperature size-dependent bands of photoluminescence were observed. • MOS capacitors with Ge nanoparticles embedded in the oxide were fabricated. • Ge nanoparticles are the main responsible for the memory properties in the devices. • Fowler-Nordheim tunneling is the conduction mechanism observed on the devices.

  17. Germanium nanoparticles grown at different deposition times for memory device applications

    Energy Technology Data Exchange (ETDEWEB)

    Mederos, M., E-mail: melissa.mederos@gmail.com [Center for Semiconductor Components and Nanotechnology (CCSNano), University of Campinas (Unicamp), Rua João Pandia Calógeras 90, Campinas, CEP: 13083-870, São Paulo (Brazil); Mestanza, S.N.M. [Federal University of ABC (UFABC), Rua Santa Adélia 166, Bangu, Santo André, CEP: 09210-170, São Paulo (Brazil); Lang, R. [Institute of Science and Technology, Federal University of São Paulo (UNIFESP), Rua Talim, 330, São José dos Campos, CEP: 12231-280, São Paulo (Brazil); Doi, I.; Diniz, J.A. [Center for Semiconductor Components and Nanotechnology (CCSNano), University of Campinas (Unicamp), Rua João Pandia Calógeras 90, Campinas, CEP: 13083-870, São Paulo (Brazil); School of Electrical and Computer Engineering, University of Campinas (Unicamp), Av. Albert Einstein 400, Campinas, CEP: 13083-852, São Paulo (Brazil)

    2016-07-29

    In the present work, circular Metal-Oxide-Semiconductor capacitors with 200 μm of diameter and germanium (Ge) nanoparticles (NPs) embedded in the gate oxide are studied for memory applications. Optimal process parameters are investigated for Ge NPs growing by low pressure chemical vapor deposition at different deposition times. Photoluminescence measurements showed room-temperature size-dependent green-red region bands attributed to quantum confinement effects present in the NPs. High-frequency capacitance versus voltage measurements demonstrated the memory effects on the MOS structures due to the presence of Ge NPs in the gate oxide acting as discrete floating gates. Current versus voltage measurements confirmed the Fowler-Nordheim tunneling as the programming mechanism of the devices. - Highlights: • Ge nanoparticles with high density and uniforms sizes were obtained by LPCVD. • Room-temperature size-dependent bands of photoluminescence were observed. • MOS capacitors with Ge nanoparticles embedded in the oxide were fabricated. • Ge nanoparticles are the main responsible for the memory properties in the devices. • Fowler-Nordheim tunneling is the conduction mechanism observed on the devices.

  18. A highly symmetrical 10 transistor 2-read/write dual-port static random access memory bitcell design in 28 nm high-k/metal-gate planar bulk CMOS technology

    Science.gov (United States)

    Ishii, Yuichiro; Tanaka, Miki; Yabuuchi, Makoto; Sawada, Yohei; Tanaka, Shinji; Nii, Koji; Lu, Tien Yu; Huang, Chun Hsien; Sian Chen, Shou; Tse Kuo, Yu; Lung, Ching Cheng; Cheng, Osbert

    2018-04-01

    We propose a highly symmetrical 10 transistor (10T) 2-read/write (2RW) dual-port (DP) static random access memory (SRAM) bitcell in 28 nm high-k/metal-gate (HKMG) planar bulk CMOS. It replaces the conventional 8T 2RW DP SRAM bitcell without any area overhead. It significantly improves the robustness of process variations and an asymmetric issue between the true and bar bitline pairs. Measured data show that read current (I read) and read static noise margin (SNM) are respectively boosted by +20% and +15 mV by introducing the proposed bitcell with enlarged pull-down (PD) and pass-gate (PG) N-channel MOSs (NMOSs). The minimum operating voltage (V min) of the proposed 256 kbit 10T DP SRAM is 0.53 V in the TT process, 25 °C under the worst access condition with read/write disturbances, and improved by 90 mV (15%) compared with the conventional one.

  19. Working memory capacity and visual-verbal cognitive load modulate auditory-sensory gating in the brainstem: toward a unified view of attention.

    Science.gov (United States)

    Sörqvist, Patrik; Stenfelt, Stefan; Rönnberg, Jerker

    2012-11-01

    Two fundamental research questions have driven attention research in the past: One concerns whether selection of relevant information among competing, irrelevant, information takes place at an early or at a late processing stage; the other concerns whether the capacity of attention is limited by a central, domain-general pool of resources or by independent, modality-specific pools. In this article, we contribute to these debates by showing that the auditory-evoked brainstem response (an early stage of auditory processing) to task-irrelevant sound decreases as a function of central working memory load (manipulated with a visual-verbal version of the n-back task). Furthermore, individual differences in central/domain-general working memory capacity modulated the magnitude of the auditory-evoked brainstem response, but only in the high working memory load condition. The results support a unified view of attention whereby the capacity of a late/central mechanism (working memory) modulates early precortical sensory processing.

  20. Control development for floating wind

    International Nuclear Information System (INIS)

    Savenije, Feike; Peeringa, Johan

    2014-01-01

    Control of a floating wind turbine has proven to be challenging, but essential for lowering the cost of floating wind energy. Topic of a recent joint R and D project by GustoMSC, MARIN and ECN, is the concept design and verification with coupled simulations and model tests of the GustoMSC Tri-Floater. Only using an integral design approach, including mooring and control design, a cost effective system can be obtained. In this project, ECN developed a general floating wind turbine control strategy and applied this in a case study to the GustoMSC Tri-Floater and the OC3Hywind spar, both equipped with the NREL 5MW RWT. The designed controller ensures stable operation, while maintaining proper speed and power regulation. The motions of the floating support are reduced and substantial load reduction has been achieved

  1. Large floating structures technological advances

    CERN Document Server

    Wang, BT

    2015-01-01

    This book surveys key projects that have seen the construction of large floating structures or have attained detailed conceptual designs. This compilation of key floating structures in a single volume captures the innovative features that mark the technological advances made in this field of engineering, and will provide a useful reference for ideas, analysis, design, and construction of these unique and emerging urban projects to offshore and marine engineers, urban planners, architects and students.

  2. Floating wind turbine system

    Science.gov (United States)

    Viterna, Larry A. (Inventor)

    2009-01-01

    A floating wind turbine system with a tower structure that includes at least one stability arm extending therefrom and that is anchored to the sea floor with a rotatable position retention device that facilitates deep water installations. Variable buoyancy for the wind turbine system is provided by buoyancy chambers that are integral to the tower itself as well as the stability arm. Pumps are included for adjusting the buoyancy as an aid in system transport, installation, repair and removal. The wind turbine rotor is located downwind of the tower structure to allow the wind turbine to follow the wind direction without an active yaw drive system. The support tower and stability arm structure is designed to balance tension in the tether with buoyancy, gravity and wind forces in such a way that the top of the support tower leans downwind, providing a large clearance between the support tower and the rotor blade tips. This large clearance facilitates the use of articulated rotor hubs to reduced damaging structural dynamic loads. Major components of the turbine can be assembled at the shore and transported to an offshore installation site.

  3. Electrically floating, near vertical incidence, skywave antenna

    Science.gov (United States)

    Anderson, Allen A.; Kaser, Timothy G.; Tremblay, Paul A.; Mays, Belva L.

    2014-07-08

    An Electrically Floating, Near Vertical Incidence, Skywave (NVIS) Antenna comprising an antenna element, a floating ground element, and a grounding element. At least part of said floating ground element is positioned between said antenna element and said grounding element. The antenna is separated from the floating ground element and the grounding element by one or more electrical insulators. The floating ground element is separated from said antenna and said grounding element by one or more electrical insulators.

  4. Wave attenuation charcteristics of tethered float system

    Digital Repository Service at National Institute of Oceanography (India)

    Vethamony, P.

    incident wave height transmitted wave height G wave number float mass number of rows of floats drag power transmitted wave power incident wave power 111 112 P. Vethamony float radius wave period time velocity and acceleration of fluid... particles, respectively wave attenuation in percentage displacement, velocity and acceleration of float, respectively amplitude of float displacement added mass damping coefficient fluid particle displacement amplitude of fluid particle displacement...

  5. Detection of charge storage on molecular thin films of tris(8-hydroxyquinoline) aluminum (Alq3) by Kelvin force microscopy: a candidate system for high storage capacity memory cells.

    Science.gov (United States)

    Paydavosi, Sarah; Aidala, Katherine E; Brown, Patrick R; Hashemi, Pouya; Supran, Geoffrey J; Osedach, Timothy P; Hoyt, Judy L; Bulović, Vladimir

    2012-03-14

    Retention and diffusion of charge in tris(8-hydroxyquinoline) aluminum (Alq(3)) molecular thin films are investigated by injecting electrons and holes via a biased conductive atomic force microscopy tip into the Alq(3) films. After the charge injection, Kelvin force microscopy measurements reveal minimal changes with time in the spatial extent of the trapped charge domains within Alq(3) films, even for high hole and electron densities of >10(12) cm(-2). We show that this finding is consistent with the very low mobility of charge carriers in Alq(3) thin films (<10(-7) cm(2)/(Vs)) and that it can benefit from the use of Alq(3) films as nanosegmented floating gates in flash memory cells. Memory capacitors using Alq(3) molecules as the floating gate are fabricated and measured, showing durability over more than 10(4) program/erase cycles and the hysteresis window of up to 7.8 V, corresponding to stored charge densities as high as 5.4 × 10(13) cm(-2). These results demonstrate the potential for use of molecular films in high storage capacity nonvolatile memory cells. © 2012 American Chemical Society

  6. Dimensional effects and scalability of Meta-Stable Dip (MSD) memory effect for 1T-DRAM SOI MOSFETs

    Science.gov (United States)

    Hubert, A.; Bawedin, M.; Cristoloveanu, S.; Ernst, T.

    2009-12-01

    The difficult scaling of bulk Dynamic Random Access Memories (DRAMs) has led to various concepts of capacitor-less single-transistor (1T) architectures based on SOI transistor floating-body effects. Amongst them, the Meta-Stable Dip RAM (MSDRAM), which is a double-gate Fully Depleted SOI transistor, exhibits attractive performances. The Meta-Stable Dip effect results from the reduced junction leakage current and the long carrier generation lifetime in thin silicon film transistors. In this study, various devices with different gate lengths, widths and silicon film thicknesses have been systematically explored, revealing the impact of transistor dimensions on the MSD effect. These experimental results are discussed and validated by two-dimensional numerical simulations. It is found that MSD is maintained for small dimensions even in standard SOI MOSFETs, although specific optimizations are expected to enhance MSDRAM performances.

  7. MHC Class I Immune Proteins Are Critical for Hippocampus-Dependent Memory and Gate NMDAR-Dependent Hippocampal Long-Term Depression

    Science.gov (United States)

    Nelson, P. Austin; Sage, Jennifer R.; Wood, Suzanne C.; Davenport, Christopher M.; Anagnostaras, Stephan G.; Boulanger, Lisa M.

    2013-01-01

    Memory impairment is a common feature of conditions that involve changes in inflammatory signaling in the brain, including traumatic brain injury, infection, neurodegenerative disorders, and normal aging. However, the causal importance of inflammatory mediators in cognitive impairments in these conditions remains unclear. Here we show that…

  8. Artisanal fishing net float loss and a proposal for a float design solution

    Directory of Open Access Journals (Sweden)

    Paulo de Tarso Chaves

    2016-03-01

    Full Text Available Abstract Plastic floats from fishing nets are commonly found washed up on beaches in southern Brazil. They are usually broken and show signs of having been repaired. Characteristics of floats and interviews with fishermen suggest two main causes of float loss. First, collisions between active gear, bottom trawl nets for shrimp, and passive gear, drift nets for fish, destroy nets and release fragments of them, including floats. Second, the difficulty with which floats are inserted on the float rope of the nets when they are used near the surface. Floats are inserted to replace damaged or lost floats, or they may be removed if it is desired that the nets be used in deeper waters. Floats may thus be poorly fixed to the cables and lost. Here a new float design that offers greater safety in use and for the replacement of floats is described and tested.

  9. Towards Interactive Steering of a Very Large Floating Structure Code by Using HPC Parallelisation Strategies

    KAUST Repository

    Frisch, Jerome

    2012-09-01

    Very large floating structures (VLFSs) have been used for broad applications such as floating storage facilities, floating piers, floating bridges, floating airports, entertainment facilities, even habitation, and other purposes. Owing to its small bending rigidity, VLFS deforms elastically when subjected to wave action. This elastic deformation due to wave is called hydro elastic response and it can be obtained by solving the interaction between the surface wave and the floating structure in the frequency domain. In solving the fluid-structure interaction, the floating structure can be modelled by applying the finite element method, whereas the fluid part may be analyzed by using the Green\\'s function method. When using the Green\\'s function which satisfies the boundary condition on the free-surface, the sea bottom and that at infinite distance from the floating structure, the unknown parameters to be determined for the fluid part can be minimized to be only those associated with the wetted surface of the floating structure. However, in the evaluation of the Green\\'s function, extensive computation time O(N2) is needed (N is the number of unknowns). Therefore, acceleration techniques are necessary to tackle the computational complexity. Nowadays, standard multi-core office PCs are already quite powerful if all the cores can be used efficiently. This paper will show different parallelisation strategies for speeding up the Green\\'s function computation. A shared memory based implementation as well as a distributed memory concept will be analysed regarding speed-up and efficiency. For large computations, batch jobs can be used to compute detailed results in high resolution on a large computational cluster or supercomputer. Different speed-up computations on clusters will be included for showing strong speed-up results. © 2012 IEEE.

  10. Impact of process parameters on the structural and electrical properties of metal/PZT/Al2O3/silicon gate stack for non-volatile memory applications

    Science.gov (United States)

    Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

    2018-02-01

    In this paper, we present the structural and electrical properties of the Al2O3 buffer layer on non-volatile memory behavior using Metal/PZT/Al2O3/Silicon structures. Metal/PZT/Silicon and Metal/Al2O3/Silicon structures were also fabricated and characterized to obtain capacitance and leakage current parameters. Lead zirconate titanate (PZT::35:65) and Al2O3 films were deposited by sputtering on the silicon substrate. Memory window, PUND, endurance, breakdown voltage, effective charges, flat-band voltage and leakage current density parameters were measured and the effects of process parameters on the structural and electrical characteristics were investigated. X-ray data show dominant (110) tetragonal phase of the PZT film, which crystallizes at 500 °C. The sputtered Al2O3 film annealed at different temperatures show dominant (312) orientation and amorphous nature at 425 °C. Multiple angle laser ellipsometric analysis reveals the temperature dependence of PZT film refractive index and extinction coefficient. Electrical characterization shows the maximum memory window of 3.9 V and breakdown voltage of 25 V for the Metal/Ferroelectric/Silicon (MFeS) structures annealed at 500 °C. With 10 nm Al2O3 layer in the Metal/Ferroelectric/Insulator/Silicon (MFeIS) structure, the memory window and breakdown voltage was improved to 7.21 and 35 V, respectively. Such structures show high endurance with no significant reduction polarization charge for upto 2.2 × 109 iteration cycles.

  11. Memory characteristics and tunneling mechanism of Ag nanocrystal embedded HfAlOx films on Si83Ge17/Si substrate

    International Nuclear Information System (INIS)

    Qiu, X.Y.; Zhou, G.D.; Li, J.; Chen, Y.; Wang, X.H.; Dai, J.Y.

    2014-01-01

    A nano-floating gate memory capacitor consisting of a stack of 3 nm-thick HfAlO x tunneling layer, self-organized Ag nanocrystals (NCs), and a 6 nm-thick HfAlO x control layer, has been fabricated on compressively strained p-type Si 83 Ge 17 /Si(100) substrates by radio-frequency magnetron sputtering. The Ag-NCs with a size of 5–8 nm and a density of 5.7 × 10 12 /cm 2 are well dispersed in the amorphous HfAlO x matrix. Counterclockwise hysteresis capacitance–voltage curve with a memory window of ∼ 2 V, corresponding to a charge storage density of about 1.3 × 10 13 electrons/cm 2 , is observed in this memory capacitor. The accumulation capacitance of this memory capacitor has no obvious decrease during electrical stressing process within a period of 10 4 s, but the memory window gradually becomes narrower, and only 54% stored charges are retained in the Ag-NCs after 10 5 s stressing. Defect-enhanced Poole–Frenkel tunneling is found to be responsible for the degradation of memory properties. - Highlights: • Dispersed Ag nanocrystals act as memory nodes. • Realize a 2 V memory window • Illustrate the memory degradation process • Identify a defect-enhanced tunneling mechanism

  12. Bio Organic-Semiconductor Field-Effect Transistor (BioFET) Based on Deoxyribonucleic Acid (DNA) Gate Dielectric

    Science.gov (United States)

    2010-03-31

    floating gate devices and metal-insulator-oxide-semiconductor (MIOS) devices. First attempts to use polarizable gate insulators in combination with...bulk of the semiconductor (ii) Due to the polarizable gate dielectric (iii) dipole polarization and (iv)electret effect due to mobile ions in the...characterization was carried out under an argon environment inside the glove box. An Agilent model E5273A with a two source-measurement unit instrument was

  13. Instantons in Self-Organizing Logic Gates

    Science.gov (United States)

    Bearden, Sean R. B.; Manukian, Haik; Traversa, Fabio L.; Di Ventra, Massimiliano

    2018-03-01

    Self-organizing logic is a recently suggested framework that allows the solution of Boolean truth tables "in reverse"; i.e., it is able to satisfy the logical proposition of gates regardless to which terminal(s) the truth value is assigned ("terminal-agnostic logic"). It can be realized if time nonlocality (memory) is present. A practical realization of self-organizing logic gates (SOLGs) can be done by combining circuit elements with and without memory. By employing one such realization, we show, numerically, that SOLGs exploit elementary instantons to reach equilibrium points. Instantons are classical trajectories of the nonlinear equations of motion describing SOLGs and connect topologically distinct critical points in the phase space. By linear analysis at those points, we show that these instantons connect the initial critical point of the dynamics, with at least one unstable direction, directly to the final fixed point. We also show that the memory content of these gates affects only the relaxation time to reach the logically consistent solution. Finally, we demonstrate, by solving the corresponding stochastic differential equations, that, since instantons connect critical points, noise and perturbations may change the instanton trajectory in the phase space but not the initial and final critical points. Therefore, even for extremely large noise levels, the gates self-organize to the correct solution. Our work provides a physical understanding of, and can serve as an inspiration for, models of bidirectional logic gates that are emerging as important tools in physics-inspired, unconventional computing.

  14. Strength Tests on Hulls and Floats

    Science.gov (United States)

    Matthaes, K

    1942-01-01

    The present report deals with strength tests on hulls and floats intended in part for the collection of construction data for the design of these components and in part for the stress analysis of the finished hulls and floats.

  15. A new assessment of floating exchange rates

    OpenAIRE

    Waimann, D. R.

    1981-01-01

    The switch to floating exchange rates during the 1970s has given economists the first comprehensive opportunity to assess the arguments for and against floating. Much new work has been done on various aspects of floating exchange rate behaviour. This article attempts a limited survey of the evidence concerning two important issues—whether floating exchange rates are inherently unstable and whether they harm international trade.

  16. 40 CFR 65.45 - External floating roof converted into an internal floating roof.

    Science.gov (United States)

    2010-07-01

    ... External floating roof converted into an internal floating roof. The owner or operator who elects to... 40 Protection of Environment 15 2010-07-01 2010-07-01 false External floating roof converted into an internal floating roof. 65.45 Section 65.45 Protection of Environment ENVIRONMENTAL PROTECTION...

  17. Have Floating Rates Been a Success?

    Science.gov (United States)

    Higham, David

    1983-01-01

    Floating exchange rates have not lived up to all expectations, but neither have they performed as badly as some critics have suggested. Examined are the impact of floating rates on balance of payments adjustment, domestic economic policy, and inflation and the claim that floating rates have displayed excessive fluctuations. (Author/RM)

  18. Floating Microparticulate Oral Diltiazem Hydrochloride Delivery ...

    African Journals Online (AJOL)

    Purpose: To formulate and evaluate floating microparticulate oral diltiazem delivery system for possible delivery to the heart. Method: Floating microspheres were prepared using cellulose acetate and Eudragit RS100 polymers by emulsion solvent evaporation technique. The dried floating microspheres were evaluated for ...

  19. Hydroelasticity of a Floating Plate

    DEFF Research Database (Denmark)

    Chen, X.; Jensen, Jørgen Juncher; Cui, W.

    2003-01-01

    The membrane forces are included in the hydroelastic analysis of a floating plate undergoing large vertical deflections in regular monochromatic multidirectional waves. The first-order vertical displacements induced by the linear wave exciting forces are calculated by the mode expansion method in...

  20. Dexras1 a unique ras-GTPase interacts with NMDA receptor activity and provides a novel dissociation between anxiety, working memory and sensory gating.

    Science.gov (United States)

    Carlson, G C; Lin, R E; Chen, Y; Brookshire, B R; White, R S; Lucki, I; Siegel, S J; Kim, S F

    2016-05-13

    Dexras1 is a novel GTPase that acts at a confluence of signaling mechanisms associated with psychiatric and neurological disease including NMDA receptors, NOS1AP and nNOS. Recent work has shown that Dexras1 mediates iron trafficking and NMDA-dependent neurodegeneration but a role for Dexras1 in normal brain function or psychiatric disease has not been studied. To test for such a role, mice with germline knockout (KO) of Dexras1 were assayed for behavioral abnormalities as well as changes in NMDA receptor subunit protein expression. Because Dexras1 is up-regulated during stress or by dexamethasone treatment, we included measures associated with emotion including anxiety and depression. Baseline anxiety-like measures (open field and zero maze) were not altered, nor were depression-like behavior (tail suspension). Measures of memory function yielded mixed results, with no changes in episodic memory (novel object recognition) but a significant decrement on working memory (T-maze). Alternatively, there was an increase in pre-pulse inhibition (PPI), without concomitant changes in either startle amplitude or locomotor activity. PPI data are consistent with the direction of change seen following exposure to dopamine D2 antagonists. An examination of NMDA subunit expression levels revealed an increased expression of the NR2A subunit, contrary to previous studies demonstrating down-regulation of the receptor following antipsychotic exposure (Schmitt et al., 2003) and up-regulation after exposure to isolation rearing (Turnock-Jones et al., 2009). These findings suggest a potential role for Dexras1 in modulating a selective subset of psychiatric symptoms, possibly via its interaction with NMDARs and/or other disease-related binding-partners. Furthermore, data suggest that modulating Dexras1 activity has contrasting effects on emotional, sensory and cognitive domains. Copyright © 2016 IBRO. Published by Elsevier Ltd. All rights reserved.

  1. A High-Performance Optical Memory Array Based on Inhomogeneity of Organic Semiconductors.

    Science.gov (United States)

    Pei, Ke; Ren, Xiaochen; Zhou, Zhiwen; Zhang, Zhichao; Ji, Xudong; Chan, Paddy Kwok Leung

    2018-03-01

    Organic optical memory devices keep attracting intensive interests for diverse optoelectronic applications including optical sensors and memories. Here, flexible nonvolatile optical memory devices are developed based on the bis[1]benzothieno[2,3-d;2',3'-d']naphtho[2,3-b;6,7-b']dithiophene (BBTNDT) organic field-effect transistors with charge trapping centers induced by the inhomogeneity (nanosprouts) of the organic thin film. The devices exhibit average mobility as high as 7.7 cm 2 V -1 s -1 , photoresponsivity of 433 A W -1 , and long retention time for more than 6 h with a current ratio larger than 10 6 . Compared with the standard floating gate memory transistors, the BBTNDT devices can reduce the fabrication complexity, cost, and time. Based on the reasonable performance of the single device on a rigid substrate, the optical memory transistor is further scaled up to a 16 × 16 active matrix array on a flexible substrate with operating voltage less than 3 V, and it is used to map out 2D optical images. The findings reveal the potentials of utilizing [1]benzothieno[3,2-b][1]benzothiophene (BTBT) derivatives as organic semiconductors for high-performance optical memory transistors with a facile structure. A detailed study on the charge trapping mechanism in the derivatives of BTBT materials is also provided, which is closely related to the nanosprouts formed inside the organic active layer. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Synthesizing biomolecule-based Boolean logic gates.

    Science.gov (United States)

    Miyamoto, Takafumi; Razavi, Shiva; DeRose, Robert; Inoue, Takanari

    2013-02-15

    One fascinating recent avenue of study in the field of synthetic biology is the creation of biomolecule-based computers. The main components of a computing device consist of an arithmetic logic unit, the control unit, memory, and the input and output devices. Boolean logic gates are at the core of the operational machinery of these parts, and hence to make biocomputers a reality, biomolecular logic gates become a necessity. Indeed, with the advent of more sophisticated biological tools, both nucleic acid- and protein-based logic systems have been generated. These devices function in the context of either test tubes or living cells and yield highly specific outputs given a set of inputs. In this review, we discuss various types of biomolecular logic gates that have been synthesized, with particular emphasis on recent developments that promise increased complexity of logic gate circuitry, improved computational speed, and potential clinical applications.

  3. Synthesizing Biomolecule-based Boolean Logic Gates

    Science.gov (United States)

    Miyamoto, Takafumi; Razavi, Shiva; DeRose, Robert; Inoue, Takanari

    2012-01-01

    One fascinating recent avenue of study in the field of synthetic biology is the creation of biomolecule-based computers. The main components of a computing device consist of an arithmetic logic unit, the control unit, memory, and the input and output devices. Boolean logic gates are at the core of the operational machinery of these parts, hence to make biocomputers a reality, biomolecular logic gates become a necessity. Indeed, with the advent of more sophisticated biological tools, both nucleic acid- and protein-based logic systems have been generated. These devices function in the context of either test tubes or living cells and yield highly specific outputs given a set of inputs. In this review, we discuss various types of biomolecular logic gates that have been synthesized, with particular emphasis on recent developments that promise increased complexity of logic gate circuitry, improved computational speed, and potential clinical applications. PMID:23526588

  4. 1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors.

    Science.gov (United States)

    Lu, Guo-Neng; Tournier, Arnaud; Roy, François; Deschamps, Benoît

    2009-01-01

    We present a single-transistor pixel for CMOS image sensors (CIS). It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation into this 1T pixel structure includes modeling to obtain analytical description of conversion gain. Model validation has been done by comparing theoretical predictions and experimental results. On the other hand, the 1T pixel structure has been implemented in different configurations, including rectangular-gate and ring-gate designs, and variations of oxidation parameters for the fabrication process. The pixel characteristics are presented and discussed.

  5. New gate opening hours

    CERN Multimedia

    GS Department

    2009-01-01

    Please note the new opening hours of the gates as well as the intersites tunnel from the 19 May 2009: GATE A 7h - 19h GATE B 24h/24 GATE C 7h - 9h\t17h - 19h GATE D 8h - 12h\t13h - 16h GATE E 7h - 9h\t17h - 19h Prévessin 24h/24 The intersites tunnel will be opened from 7h30 to 18h non stop. GS-SEM Group Infrastructure and General Services Department

  6. Nonvolatile memory thin film transistors using CdSe/ZnS quantum dot-poly(methyl methacrylate) composite layer formed by a two-step spin coating technique

    Science.gov (United States)

    Chen, Ying-Chih; Huang, Chun-Yuan; Yu, Hsin-Chieh; Su, Yan-Kuin

    2012-08-01

    The nonvolatile memory thin film transistors (TFTs) using a core/shell CdSe/ZnS quantum dot (QD)-poly(methyl methacrylate) (PMMA) composite layer as the floating gate have been demonstrated, with the device configuration of n+-Si gate/SiO2 insulator/QD-PMMA composite layer/pentacene channel/Au source-drain being proposed. To achieve the QD-PMMA composite layer, a two-step spin coating technique was used to successively deposit QD-PMMA composite and PMMA on the insulator. After the processes, the variation of crystal quality and surface morphology of the subsequent pentacene films characterized by x-ray diffraction spectra and atomic force microscopy was correlated to the two-step spin coating. The crystalline size of pentacene was improved from 147.9 to 165.2 Å, while the degree of structural disorder was decreased from 4.5% to 3.1% after the adoption of this technique. In pentacene-based TFTs, the improvement of the performance was also significant, besides the appearances of strong memory characteristics. The memory behaviors were attributed to the charge storage/discharge effect in QD-PMMA composite layer. Under the programming and erasing operations, programmable memory devices with the memory window (Δ Vth) = 23 V and long retention time were obtained.

  7. Period1 gates the circadian modulation of memory-relevant signaling in mouse hippocampus by regulating the nuclear shuttling of the CREB kinase pP90RSK

    DEFF Research Database (Denmark)

    Rawashdeh, Oliver; Jilg, Antje; Maronde, Erik

    2016-01-01

    , the presence of PER1 in hippocampal neurons is a prerequisite for the time-of-day-dependent phosphorylation of CREB, as it regulates the shuttling of pP90RSK into the nucleus. Representative immunofluorescence images show a temporal difference in phosphorylated cAMP response element-binding protein (p...... activation. Taken together, the PER1-dependent modulation of cytoplasmic-to-nuclear signaling in the murine hippocampus provides a molecular explanation for how the circadian system potentially shapes a temporal framework for daytime-dependent memory performance, and adds a novel facet to the versatility......CREB; green color) levels in all regions of the dorsal hippocampus between a wild-type C3H mouse (WT; left) and a Period1-knockout (Per1−/−; right) mouse. Images were taken 2 h after lights on, thus, when fluctuating levels of pCREB peak in WT mouse hippocampus. Insets show a representative hippocampal neuron...

  8. Handbook of floating-point arithmetic

    CERN Document Server

    Muller, Jean-Michel; de Dinechin, Florent; Jeannerod, Claude-Pierre; Joldes, Mioara; Lefèvre, Vincent; Melquiond, Guillaume; Revol, Nathalie; Torres, Serge

    2018-01-01

    This handbook is a definitive guide to the effective use of modern floating-point arithmetic, which has considerably evolved, from the frequently inconsistent floating-point number systems of early computing to the recent IEEE 754-2008 standard. Most of computational mathematics depends on floating-point numbers, and understanding their various implementations will allow readers to develop programs specifically tailored for the standard’s technical features. Algorithms for floating-point arithmetic are presented throughout the book and illustrated where possible by example programs which show how these techniques appear in actual coding and design. The volume itself breaks its core topic into four parts: the basic concepts and history of floating-point arithmetic; methods of analyzing floating-point algorithms and optimizing them; implementations of IEEE 754-2008 in hardware and software; and useful extensions to the standard floating-point system, such as interval arithmetic, double- and triple-word arithm...

  9. MASMA: a versatile multifunctional unit (gated window amplifier, analog memory, and height-to-time converter); Element multifonctionnel M.A.S.M.A. (module amplificateur a seuil, memoire analogique et convertisseur amplitude-temps)

    Energy Technology Data Exchange (ETDEWEB)

    Goursky, V.; Thenes, P. [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1969-07-01

    This multipurpose unit is designed to accomplish one of the following functions: - gated window amplifier, - Analog memory and - Amplitude-to-time converter. The first function is mainly devoted to improve the poor resolution of pulse-height analyzers with a small number of channels. The analog memory, a new function in the standard range of plug-in modules, is capable of performing a number of operations: 1) fixed delay, or variable delay dependent on an external parameter (application to the analog processing of non-coincident pulses), 2) de-randomiser to increase the efficiency of the pulse height analysis in a spectrometry experiment, 3) linear multiplexer to allow an analyser to serve as many spectrometry devices as memory elements that it possesses. Associated with a coding scaler, this unit, if used as a amplitude-to-time converter, constitutes a Wilkinson A.D.C with a capability of 10 bits (or more) and with a 100 MHz clock frequency. (authors) [French] Le present element est concu pour etre utilise dans l'un des modes de fonctionnement suivants: - amplificateur a seuil avec porte, - memoire analogique, - convertisseur amplitude-temps. La fonction amplificateur a seuil est destinee principalement a remedier a la resolution insuffisante de certains analyseurs d'amplitude possedant un faible nombre de canaux. La fonction memoire analogique est une fonction qui n'existe pas encore dans la gamme d'elements standardises. Elle peut trouver de nombreuses applications; a titre d'exemple, citons: 1) element de retard fixe ou dependant d'un parametre externe (application au calcul analogique portant sur les impulsions), 2) memoire-tampon: placee devant un analyseur, elle augmente l'efficacite d'analyse d'une chaine de spectrometrie, 3) multiplexeur analogique, permettant a un seul analyseur de desservir autant de voies de spectrometrie qu'il possede de memoires. En fonction convertisseur amplitude-temps, ce tiroir

  10. Floating on the margins [Environmental issues for floating production platforms

    International Nuclear Information System (INIS)

    Grimshaw, R.

    1997-01-01

    The main environmental issues challenging oilfield development using floating production platforms in harsh environments such as the Atlantic frontier are discussed. These fall into two broad categories -operating conditions and biological disturbance. Particular combinations of wind and currents can lead to extremely difficult operating conditions through which floating units are expected to maintain production for economic reasons. This imposes stringent conditions on the design and construction of tanker hulls and of risers to enable them to remain connected at all times. Prediction of wind and wave forces is a crucial element of operational and safety planning. Fauna in seabed sediments disturbed by pipeline laying often relocate but some seeding back of colonies may be required in hard rock areas. Migration routes for cetaceans and the feeding grounds of marine birds must be considered and the potential long and short term damage to commercial fisheries through discharges need to be assessed. A significant risk is the interaction of sub-sea facilities and fishing gear and oil spills. Operational and accidental discharges of production chemicals, produced water containing oil, deck drainage and treated sewage, and discharges to air from flaring and utility exhausts are of major environmental concern calling for mitigation and protection measures and contingency plans. Some of the environmental issues associated with decommissioning are reduced by the use of floating platforms but there are global and national regulations governing the process. (UK)

  11. A theory of managed floating

    OpenAIRE

    Wollmershäuser, Timo

    2004-01-01

    After the experience with the currency crises of the 1990s, a broad consensus has emerged among economists that such shocks can only be avoided if countries that decided to maintain unrestricted capital mobility adopt either independently floating exchange rates or very hard pegs (currency boards, dollarisation). As a consequence of this view which has been enshrined in the so-called impossible trinity all intermediate currency regimes are regarded as inherently unstable. As far as the econom...

  12. Measurements of a vortex transitional ndro Josephson memory cell

    International Nuclear Information System (INIS)

    Tahara, S.; Ishida, I.; Hidaka, M.; Nagasawa, S.; Ajisawa, Y.; Wada, Y.

    1988-01-01

    A novel vortex transitional NDRO Jospehson memory cell has been successfully fabricated and tested. The memory cell consists of two superconducting loops and a two-junction interferometer gate as a sense gate. The superconducting loop contains one Josephson junction and inductances, and stores single flux quantum. The memory cell employs vortex transitions in the superconducting loops for writing and reading data. The memory cell chips have been fabricated using niobium planarization process. The +-21 percent address signal current margin and the +-33 percent sense gate current margin have been obtained experimentally. The memory operation of the cell driven by the two-junction interferometer gates has been accurately demonstrated

  13. Hywind floating wind turbine project

    Energy Technology Data Exchange (ETDEWEB)

    Crome, Tim

    2010-07-01

    The Hywind floating wind turbine concept was developed by StatoilHydro. Technip was awarded the contract for engineering, fabrication and installation of a demonstration unit in May 2008 and the completed wind turbine was installed mid June 2009 at the west coast of Norway on 220 m water depth. The demonstration unit will generate 2,3 MW and is equipped with instrumentation for monitoring mooring forces, strains and motions. The fabrication of the SPAR type steel substructure was performed at Technip Offshore Finland facilities in Pori and was towed horizontally from Finland to Norway, where it was upended to a vertical position by water filling. The completed floating wind turbine was towed vertically to the final location west of Karmoey and connected to the pre-installed three legged anchor system using an Anchor Handling Tug type vessel. The wind turbine test period is scheduled to start in September 2009. Statoil will monitor the performance of the system for two years before decision will be taken for further development. The paper will present the main challenges and lessons learned through design, fabrication and installation of this first of its kind structure. Main emphasis will be on the special challenges experienced for this floating, catenary moored, slender unit which is highly exposed for wind induced forces in addition to current and waves in hostile North Sea environments. (Author)

  14. Can flexibility help you float?

    Science.gov (United States)

    Burton, L. J.; Bush, J. W. M.

    2012-10-01

    We consider the role of flexibility in the weight-bearing characteristics of bodies floating at an interface. Specifically, we develop a theoretical model for a two-dimensional thin floating plate that yields the maximum stable plate load and optimal stiffness for weight support. Plates small relative to the capillary length are primarily supported by surface tension, and their weight-bearing potential does not benefit from flexibility. Above a critical size comparable to the capillary length, flexibility assists interfacial flotation. For plates on the order of and larger than the capillary length, deflection from an initially flat shape increases the force resulting from hydrostatic pressure, allowing the plate to support a greater load. In this large plate limit, the shape that bears the most weight is a semicircle, which displaces the most fluid above the plate for a fixed plate length. Exact results for maximum weight-bearing plate shapes are compared to analytic approximations made in the limits of large and small plate sizes. The value of flexibility for floating to a number of biological organisms is discussed in light of our study.

  15. Write/erase time of nanoseconds in quantum dot based memory structures

    International Nuclear Information System (INIS)

    Nowozin, Tobias; Marent, Andreas; Geller, Martin; Bimberg, Dieter

    2008-01-01

    We have developed a novel charge-storage memory concept based on III-V semiconductor quantum dots (QDs) which has a number of fundamental advantages over conventional Si/SiO 2 floating gate memories (Flash): material-tunable and voltage-tunable barriers for improved intrinsic speed and/or storage time and high endurance. To investigate the potential of this new memory concept we have determined intrinsic write/erase times in memory structures based on InAs/GaAs and GaSb/GaAs QDs using capacitance-voltage spectroscopy. We measured a write time below 15 ns independent of the localization energy (i.e. the storage time) of the QDs. This write time is more than three orders of magnitude faster than in a Flash cell and already below the write time of a dynamic random access memory (DRAM). The erase time was determined to be 42 ns for InAs/GaAs QDs and 1.5 ms for GaSb/GaAs QDs for applied electric fields of 166 kV/cm and 206 kV/cm, respectively. From these results we derive an erase time of 1 ns in GaSb QDs for an electric field of 330 kV/cm

  16. 14 CFR 27.753 - Main float design.

    Science.gov (United States)

    2010-01-01

    ... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Main float design. 27.753 Section 27.753... STANDARDS: NORMAL CATEGORY ROTORCRAFT Design and Construction Floats and Hulls § 27.753 Main float design. (a) Bag floats. Each bag float must be designed to withstand— (1) The maximum pressure differential...

  17. 14 CFR 29.753 - Main float design.

    Science.gov (United States)

    2010-01-01

    ... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Main float design. 29.753 Section 29.753... STANDARDS: TRANSPORT CATEGORY ROTORCRAFT Design and Construction Floats and Hulls § 29.753 Main float design. (a) Bag floats. Each bag float must be designed to withstand— (1) The maximum pressure differential...

  18. Floating Microparticulate Oral Diltiazem Hydrochloride Delivery ...

    African Journals Online (AJOL)

    Delivery System for Improved Delivery to Heart ... Conclusion: Microparticulate floating (gastroretentive) oral drug delivery system of diltiazem prepared ..... treatment of cardiac disease. ... hydrochloride-loaded mucoadhesive microspheres.

  19. Fast Weight Long Short-Term Memory

    OpenAIRE

    Keller, T. Anderson; Sridhar, Sharath Nittur; Wang, Xin

    2018-01-01

    Associative memory using fast weights is a short-term memory mechanism that substantially improves the memory capacity and time scale of recurrent neural networks (RNNs). As recent studies introduced fast weights only to regular RNNs, it is unknown whether fast weight memory is beneficial to gated RNNs. In this work, we report a significant synergy between long short-term memory (LSTM) networks and fast weight associative memories. We show that this combination, in learning associative retrie...

  20. Memory characteristics of Au nanocrystals embedded in metal-oxide-semiconductor structure by using atomic-layer-deposited Al2O3 as control oxide

    International Nuclear Information System (INIS)

    Wang, C.-C.; Chiou, Y.-K.; Chang, C.-H.; Tseng, J.-Y.; Wu, L.-J.; Chen, C.-Y.; Wu, T.-B.

    2007-01-01

    The nonvolatile memory characteristics of metal-oxide-semiconductor (MOS) structures containing Au nanocrystals in the Al 2 O 3 /SiO 2 matrix were studied. In this work, we have demonstrated that the use of Al 2 O 3 as control oxide prepared by atomic-layer-deposition enhances the erase speed of the MOS capacitors. A giant capacitance-voltage hysteresis loop and a very short erase time which is lower than 1 ms can be obtained. Compared with the conventional floating-gate electrically erasable programmable read-only memories, the erase speed was promoted drastically. In addition, very low leakage current and large turn-around voltage resulting from electrons or holes stored in the Au nanocrystals were found in the current-voltage relation of the MOS capacitors

  1. Implementing floating-point DSP

    Czech Academy of Sciences Publication Activity Database

    Kadlec, Jiří; Chappel, S.

    2006-01-01

    Roč. 2, č. 3 (2006), s. 12-14 R&D Projects: GA AV ČR 1ET400750406; GA MŠk 1M0567 EU Projects: European Commission(XE) 027611 - AETHER Program:FP6 Institutional research plan: CEZ:AV0Z10750506 Keywords : PicoBlaze * floating point * FPGA Subject RIV: JC - Computer Hardware ; Software http://www.xilinx.com/publications/ magazines /emb_03/xc_pdf/p12-14_3emb-point.pdf

  2. Development of anti-biofouling methods for gate facilities

    International Nuclear Information System (INIS)

    Fukuoka, Mari; Akamine, Kenichi; Iai, Yuuichi; Takatoo, Norihiro; Fukushima, Noriaki

    2016-01-01

    In the maintenance and management of gate facilities, a large sum of money and labor are required to remove and clean organisms that attach themselves to the facilities. That is why we developed two anti-biofouling systems, one that uses a weak electric current and another that uses ultrasonic waves. We carried out basic examinations and actual environment examinations to verify the effects of these methods. As a result, it has been confirmed that these methods effectively anti-foul the parts they are applied to, and that they can be used on gate facilities. In the future, we will evaluate their adaptability to aqueducts, such as those used in thermal and nuclear power plants, and marine structures, such as floating breakwaters, in addition to gate facilities. (author)

  3. Gate-first integration of tunable work function metal gates of different thicknesses into high-k metal gates CMOS FinFETs for multi- VTh engineering

    KAUST Repository

    Hussain, Muhammad Mustafa

    2010-03-01

    Gate-first integration of tunable work function metal gates of different thicknesses (320 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (VTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering ∼ 40 mV/V), nearly symmetric VTh, low T inv(∼ 1.4 nm), and high Ion(∼780μAμm) for N/PMOS without any intentional strain enhancement. © 2006 IEEE.

  4. Gate-first integration of tunable work function metal gates of different thicknesses into high-k metal gates CMOS FinFETs for multi- VTh engineering

    KAUST Repository

    Hussain, Muhammad Mustafa; Smith, Casey Eben; Harris, Harlan Rusty; Young, Chadwin; Tseng, Hsinghuang; Jammy, Rajarao

    2010-01-01

    Gate-first integration of tunable work function metal gates of different thicknesses (320 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (VTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering ∼ 40 mV/V), nearly symmetric VTh, low T inv(∼ 1.4 nm), and high Ion(∼780μAμm) for N/PMOS without any intentional strain enhancement. © 2006 IEEE.

  5. Optical quantum memory

    Science.gov (United States)

    Lvovsky, Alexander I.; Sanders, Barry C.; Tittel, Wolfgang

    2009-12-01

    Quantum memory is essential for the development of many devices in quantum information processing, including a synchronization tool that matches various processes within a quantum computer, an identity quantum gate that leaves any state unchanged, and a mechanism to convert heralded photons to on-demand photons. In addition to quantum computing, quantum memory will be instrumental for implementing long-distance quantum communication using quantum repeaters. The importance of this basic quantum gate is exemplified by the multitude of optical quantum memory mechanisms being studied, such as optical delay lines, cavities and electromagnetically induced transparency, as well as schemes that rely on photon echoes and the off-resonant Faraday interaction. Here, we report on state-of-the-art developments in the field of optical quantum memory, establish criteria for successful quantum memory and detail current performance levels.

  6. Volatile and Nonvolatile Characteristics of Asymmetric Dual-Gate Thyristor RAM with Vertical Structure.

    Science.gov (United States)

    Kim, Hyun-Min; Kwon, Dae Woong; Kim, Sihyun; Lee, Kitae; Lee, Junil; Park, Euyhwan; Lee, Ryoongbin; Kim, Hyungjin; Kim, Sangwan; Park, Byung-Gook

    2018-09-01

    In this paper, the volatile and nonvolatile characteristics of asymmetric dual-gate thyristor random access memory (TRAM) are investigated using the technology of a computer-aided design (TCAD) simulation. Owing to the use of two independent gates having different gate dielectric layers, volatile and nonvolatile memory functions can be realized in a single device. The first gate with a silicon oxide layer controls the one-transistor dynamic random access memory (1T-DRAM) characteristics of the device. From the simulation results, a rapid write speed (107) can be achieved. The second gate, whose dielectric material is composed of oxide/nitride/oxide (O/N/O) layers, is used to implement the nonvolatile property by trapping charges in the nitride layer. In addition, this offers an advantage when processing the 3D-stack memory application, as the device has a vertical channel structure with polycrystalline silicon.

  7. Quantum gate decomposition algorithms.

    Energy Technology Data Exchange (ETDEWEB)

    Slepoy, Alexander

    2006-07-01

    Quantum computing algorithms can be conveniently expressed in a format of a quantum logical circuits. Such circuits consist of sequential coupled operations, termed ''quantum gates'', or quantum analogs of bits called qubits. We review a recently proposed method [1] for constructing general ''quantum gates'' operating on an qubits, as composed of a sequence of generic elementary ''gates''.

  8. Floating liquid bridge charge dynamics

    Science.gov (United States)

    Teschke, Omar; Soares, David Mendez; Gomes, Whyllerson Evaristo; Valente Filho, Juracyr Ferraz

    2016-01-01

    The interaction of liquid with electric fields is investigated in a configuration where up to 13 kV are applied between electrodes resulting in a 106 V/m electric field in the capillaries and where there is the formation of a free-standing fluid bridge in the interelectrode gap. The Mott-Gurney equation was fitted to the measured ionization current vs applied voltage curve which indicates that the ionization rate at the high-voltage anode electrode dimethylsulfoxide (DMSO) interface and space charging in the interelectrode gap determine the floating liquid bridge current for a given cathode-to-anode voltage. Space charge effects were measured in the cathode becker and also at the liquid bridge since the ionized charges at the anode migrate to the bridge outer surface and decrease the interfacial tension from 43 mJ/m2 to 29 mJ/m2. Two distinct structural regions then form the bridge, a charged plastic (bulk modulus ˜100 MPa) conducting outer layer with a surface conductivity of ˜10-9 Ω-1, which shapes and supports the floating fluid structure, and an inner liquid cylinder, where DMSO molecules flow.

  9. Nuclear floating power desalination complexes

    International Nuclear Information System (INIS)

    Panov, Y.K.; Polunichev, V.I.; Zverev, K.V.

    1998-01-01

    Russia is a single country in the world which possesses a powerful ice-breaker transport fleet that allows a solution of important social-economic tasks of the country's northern regions by maintaining a year-round navigation along the Arctic sea route. A total operating record of the marine nuclear reactors up until till now exceeds 150 reactor-years, with their main equipment operating life reacting 120 thousand hours. Design and constructional progresses have been made continuously during forty years of nuclear-powered ships construction in Russia. Well proven technology of all components experienced in the marine nuclear reactors give grounds to recommend marine NSSSs of KLT-40 type as energy sources for the heat and power co-generation plants and the sea water desalination complexes, particularly as a floating installation. Co-generation stations are considered for deployment in the extreme Northern Region of Russia. Nuclear floating desalination complexes can be used for drinkable water production in the coastal regions of Northern Africa, the Near East, India etc. (author)

  10. Cyclic Nucleotide-Gated Channels, Calmodulin, Adenylyl Cyclase, and Calcium/Calmodulin-Dependent Protein Kinase II Are Required for Late, but Not Early, Long-Term Memory Formation in the Honeybee

    Science.gov (United States)

    Matsumoto, Yukihisa; Sandoz, Jean-Christophe; Devaud, Jean-Marc; Lormant, Flore; Mizunami, Makoto; Giurfa, Martin

    2014-01-01

    Memory is a dynamic process that allows encoding, storage, and retrieval of information acquired through individual experience. In the honeybee "Apis mellifera," olfactory conditioning of the proboscis extension response (PER) has shown that besides short-term memory (STM) and mid-term memory (MTM), two phases of long-term memory (LTM)…

  11. Vertical pump with free floating check valve

    International Nuclear Information System (INIS)

    Lindsay, M.

    1980-01-01

    A vertical pump is described which has a bottom discharge with a free floating check valve disposed in the outlet plenum thereof. The free floating check valve comprises a spherical member with a hemispherical cage-like member attached thereto which is capable of allowing forward or reverse flow under appropriate conditions while preventing reverse flow under inappropriate conditions

  12. Zinc Cadmium Selenide Cladded Quantum Dot Based Electroluminescent and Nonvolatile Memory Devices

    Science.gov (United States)

    Al-Amody, Fuad H.

    This dissertation presents electroluminescent (EL) and nonvolatile memory devices fabricated using pseudomorphic ZnCdSe-based cladded quantum dots (QDs). These dots were grown using our own in-school built novel reactor. The EL device was fabricated on a substrate of ITO (indium tin oxide) coated glass with the quantum dots sandwiched between anode and cathode contacts with a small barrier layer on top of the QDs. The importance of these cladded dots is to increase the quantum yield of device. This device is unique as they utilize quantum dots that are pseudomorphic (nearly lattice-matched core and the shell of the dot). In the case of floating quantum dot gate nonvolatile memory, cladded ZnCdSe quantum dots are deposited on single crystalline gate insulator (ZnMgS/ZnMgSe), which is grown using metal-organic chemical vapor deposition (MOCVD). The control gate dielectric layer of the nonvolatile memory is Si3N4 or SiO2 and is grown using plasma enhanced chemical vapor deposition (PECVD). The cladded dots are grown using an improved methodology of photo-assisted microwave plasma metal-organic chemical vapor deposition (PMP-MOCVD) enhanced reactor. The cladding composition of the core and shell of the dots was engineered by the help of ultraviolet light which changed the incorporation of zinc (and hence composition of ZnCdSe). This makes ZnxCd1--xSe-ZnyCd1--y Se QDs to have a low composition of zinc in the core than the cladding (x

  13. Signatures of Mechanosensitive Gating.

    Science.gov (United States)

    Morris, Richard G

    2017-01-10

    The question of how mechanically gated membrane channels open and close is notoriously difficult to address, especially if the protein structure is not available. This perspective highlights the relevance of micropipette-aspirated single-particle tracking-used to obtain a channel's diffusion coefficient, D, as a function of applied membrane tension, σ-as an indirect assay for determining functional behavior in mechanosensitive channels. While ensuring that the protein remains integral to the membrane, such methods can be used to identify not only the gating mechanism of a protein, but also associated physical moduli, such as torsional and dilational rigidity, which correspond to the protein's effective shape change. As an example, three distinct D-versus-σ "signatures" are calculated, corresponding to gating by dilation, gating by tilt, and gating by a combination of both dilation and tilt. Both advantages and disadvantages of the approach are discussed. Copyright © 2017 Biophysical Society. Published by Elsevier Inc. All rights reserved.

  14. Growing halophytes floating at sea

    Directory of Open Access Journals (Sweden)

    Ricardo Radulovich

    2017-11-01

    Full Text Available Freshwater shortages are increasingly limiting both irrigated and rainfed agriculture. To expand possibilities for controlled plant production without using land nor freshwater, we cultivated potted halophytes floating at sea that were provided with rain- and seawater. Plantlets of two mangroves (Avicennia germinans and Rhizophora mangle and plants of two herbaceous species, sea purslane (Sesuvium portulacastrum and salt couch grass (Sporobolus virginicus were grown in near-coastal tropical Pacific waters of Costa Rica for 733 days. There were a total of 504 rainless days, including two dry periods of ca. 150 d long each, evidencing prolonged and exclusive reliance on seawater. Pots with a sandy soil mixture and the transplanted plants were placed on low-cost wooden floating rafts with their lower end perforated and immersed for capillary rise of water. Free seawater entry and exit through the bottom from bobbing with waves, which also occasionally added water from the top, effectively controlled soil salinity build-up even during the rainless seasons. Continuous leaching made necessary frequent fertilizer addition. No water deficit symptoms were observed and midday canopy temperature during rainless periods was not significantly different between species or from air temperature. With all-year-round growth, height increase of mangrove plantlets ranged from 208.1 to 401.5 mm yr−1. Fresh biomass production of sea purslane and the grass was 10.9 and 3.0 kg m−2 yr−1 respectively. High yield, edibility and protein content of 10.2% dry weight established sea purslane as a potential crop. While further research is needed, the method evidenced to be a viable plant production option of potentially far-reaching applications.

  15. Towards Interactive Steering of a Very Large Floating Structure Code by Using HPC Parallelisation Strategies

    KAUST Repository

    Frisch, Jerome; Gao, Ruiping; Mundani, Ralf-Peter; Wang, Chien Ming; Rank, Ernst

    2012-01-01

    Very large floating structures (VLFSs) have been used for broad applications such as floating storage facilities, floating piers, floating bridges, floating airports, entertainment facilities, even habitation, and other purposes. Owing to its small

  16. Boolean gates on actin filaments

    International Nuclear Information System (INIS)

    Siccardi, Stefano; Tuszynski, Jack A.; Adamatzky, Andrew

    2016-01-01

    Actin is a globular protein which forms long polar filaments in the eukaryotic cytoskeleton. Actin networks play a key role in cell mechanics and cell motility. They have also been implicated in information transmission and processing, memory and learning in neuronal cells. The actin filaments have been shown to support propagation of voltage pulses. Here we apply a coupled nonlinear transmission line model of actin filaments to study interactions between voltage pulses. To represent digital information we assign a logical TRUTH value to the presence of a voltage pulse in a given location of the actin filament, and FALSE to the pulse's absence, so that information flows along the filament with pulse transmission. When two pulses, representing Boolean values of input variables, interact, then they can facilitate or inhibit further propagation of each other. We explore this phenomenon to construct Boolean logical gates and a one-bit half-adder with interacting voltage pulses. We discuss implications of these findings on cellular process and technological applications. - Highlights: • We simulate interaction between voltage pulses using on actin filaments. • We use a coupled nonlinear transmission line model. • We design Boolean logical gates via interactions between the voltage pulses. • We construct one-bit half-adder with interacting voltage pulses.

  17. Boolean gates on actin filaments

    Energy Technology Data Exchange (ETDEWEB)

    Siccardi, Stefano, E-mail: ssiccardi@2ssas.it [The Unconventional Computing Centre, University of the West of England, Bristol (United Kingdom); Tuszynski, Jack A., E-mail: jackt@ualberta.ca [Department of Oncology, University of Alberta, Edmonton, Alberta (Canada); Adamatzky, Andrew, E-mail: andrew.adamatzky@uwe.ac.uk [The Unconventional Computing Centre, University of the West of England, Bristol (United Kingdom)

    2016-01-08

    Actin is a globular protein which forms long polar filaments in the eukaryotic cytoskeleton. Actin networks play a key role in cell mechanics and cell motility. They have also been implicated in information transmission and processing, memory and learning in neuronal cells. The actin filaments have been shown to support propagation of voltage pulses. Here we apply a coupled nonlinear transmission line model of actin filaments to study interactions between voltage pulses. To represent digital information we assign a logical TRUTH value to the presence of a voltage pulse in a given location of the actin filament, and FALSE to the pulse's absence, so that information flows along the filament with pulse transmission. When two pulses, representing Boolean values of input variables, interact, then they can facilitate or inhibit further propagation of each other. We explore this phenomenon to construct Boolean logical gates and a one-bit half-adder with interacting voltage pulses. We discuss implications of these findings on cellular process and technological applications. - Highlights: • We simulate interaction between voltage pulses using on actin filaments. • We use a coupled nonlinear transmission line model. • We design Boolean logical gates via interactions between the voltage pulses. • We construct one-bit half-adder with interacting voltage pulses.

  18. Optical XOR gate

    Science.gov (United States)

    Vawter, G. Allen

    2013-11-12

    An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  19. 14 CFR 23.753 - Main float design.

    Science.gov (United States)

    2010-01-01

    ... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Main float design. 23.753 Section 23.753... STANDARDS: NORMAL, UTILITY, ACROBATIC, AND COMMUTER CATEGORY AIRPLANES Design and Construction Floats and Hulls § 23.753 Main float design. Each seaplane main float must meet the requirements of § 23.521. [Doc...

  20. 14 CFR 29.757 - Hull and auxiliary float strength.

    Science.gov (United States)

    2010-01-01

    ... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Hull and auxiliary float strength. 29.757... AIRCRAFT AIRWORTHINESS STANDARDS: TRANSPORT CATEGORY ROTORCRAFT Design and Construction Floats and Hulls § 29.757 Hull and auxiliary float strength. The hull, and auxiliary floats if used, must withstand the...

  1. Genetics Home Reference: Floating-Harbor syndrome

    Science.gov (United States)

    ... Patton MA, Hurst J, Donnai D, McKeown CM, Cole T, Goodship J. Floating-Harbor syndrome. J Med ... medicine? What is newborn screening? New Pages Lyme disease Fibromyalgia White-Sutton syndrome All New & Updated Pages ...

  2. Cholecystosonographic findings of clonorchiasis: Floating echogenic foci

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ho Kyun [Choong Joo X-ray Clinic, Choongjoo (Korea, Republic of)

    1989-06-15

    Author analysed cholecystosonographic findings in 22 patients with clonorchiasis, suspected prospectively by ultrasound and proved subsequently by demonstration of eggs in the stools. Fifteen gallbladders had nonshadowing, fusiform, discrete echogenic foci measuring 3{approx}6 mm in the lumen. Among these, the echogenic foci floated spontaneously in three cases, while in twelve cases they floated by position change or a light blow by the transducer. In the rest of the seven gallbladders, the echogenic foci were at the dependent portion. In the in vitro study with a worm suspension in saline in a surgical glove, the same echogenic foci as those seen in the gallbladders were demonstrated. The echogenic foci were precipitated in the dependent portion but float with a light blow on the glove. Author conclude that the floating echogenic foci in the lumen of the gallbladder are due to adult worms of clonorchis sinensis.

  3. Cholecystosonographic findings of clonorchiasis: Floating echogenic foci

    International Nuclear Information System (INIS)

    Kim, Ho Kyun

    1989-01-01

    Author analysed cholecystosonographic findings in 22 patients with clonorchiasis, suspected prospectively by ultrasound and proved subsequently by demonstration of eggs in the stools. Fifteen gallbladders had nonshadowing, fusiform, discrete echogenic foci measuring 3∼6 mm in the lumen. Among these, the echogenic foci floated spontaneously in three cases, while in twelve cases they floated by position change or a light blow by the transducer. In the rest of the seven gallbladders, the echogenic foci were at the dependent portion. In the in vitro study with a worm suspension in saline in a surgical glove, the same echogenic foci as those seen in the gallbladders were demonstrated. The echogenic foci were precipitated in the dependent portion but float with a light blow on the glove. Author conclude that the floating echogenic foci in the lumen of the gallbladder are due to adult worms of clonorchis sinensis

  4. Design and preparation of controlled floating gastroretentive ...

    African Journals Online (AJOL)

    gastroretentive delivery systems for enhanced fexofenadine ... Abstract. Purpose: To design and prepare effervescent floating gastroretentive tablets for controlled fexofenadine ..... Complex of Carbopol with Polyvinylpyrrolidone as a. Matrix for ...

  5. Dynamic Response of a Floating Bridge Structure

    OpenAIRE

    Viuff, Thomas; Leira, Bernt Johan; Øiseth, Ole; Xiang, Xu

    2016-01-01

    A theoretical overview of the stochastic dynamic analysis of a floating bridge structure is presented. Emphasis is on the wave-induced response and the waves on the sea surface are idealized as a zero mean stationary Gaussian process. The first-order wave load processes are derived using linear potential theory and the structural idealization is based on the Finite Element Method. A frequency response calculation is presented for a simplified floating bridge structure example emphasising the ...

  6. Fear of Floating: Exchange Rate Flexibility Indices

    OpenAIRE

    Reinhart, Carmen

    2001-01-01

    Many emerging market countries have suffered financial crises. One view blames soft pegs for these crises. Adherents to that view suggest that countries move to corner solutions--hard pegs or floating exchange rates. We analyze the behavior of exchange rates, reserves, and interest rates to assess whether there is evidence that country practice is moving toward corner solutions. We focus on whether countries that claim they are floating are indeed doing so. We find that countries that say th...

  7. Sensitivity analysis of floating offshore wind farms

    International Nuclear Information System (INIS)

    Castro-Santos, Laura; Diaz-Casas, Vicente

    2015-01-01

    Highlights: • Develop a sensitivity analysis of a floating offshore wind farm. • Influence on the life-cycle costs involved in a floating offshore wind farm. • Influence on IRR, NPV, pay-back period, LCOE and cost of power. • Important variables: distance, wind resource, electric tariff, etc. • It helps to investors to take decisions in the future. - Abstract: The future of offshore wind energy will be in deep waters. In this context, the main objective of the present paper is to develop a sensitivity analysis of a floating offshore wind farm. It will show how much the output variables can vary when the input variables are changing. For this purpose two different scenarios will be taken into account: the life-cycle costs involved in a floating offshore wind farm (cost of conception and definition, cost of design and development, cost of manufacturing, cost of installation, cost of exploitation and cost of dismantling) and the most important economic indexes in terms of economic feasibility of a floating offshore wind farm (internal rate of return, net present value, discounted pay-back period, levelized cost of energy and cost of power). Results indicate that the most important variables in economic terms are the number of wind turbines and the distance from farm to shore in the costs’ scenario, and the wind scale parameter and the electric tariff for the economic indexes. This study will help investors to take into account these variables in the development of floating offshore wind farms in the future

  8. Fixed-Rate Compressed Floating-Point Arrays.

    Science.gov (United States)

    Lindstrom, Peter

    2014-12-01

    Current compression schemes for floating-point data commonly take fixed-precision values and compress them to a variable-length bit stream, complicating memory management and random access. We present a fixed-rate, near-lossless compression scheme that maps small blocks of 4(d) values in d dimensions to a fixed, user-specified number of bits per block, thereby allowing read and write random access to compressed floating-point data at block granularity. Our approach is inspired by fixed-rate texture compression methods widely adopted in graphics hardware, but has been tailored to the high dynamic range and precision demands of scientific applications. Our compressor is based on a new, lifted, orthogonal block transform and embedded coding, allowing each per-block bit stream to be truncated at any point if desired, thus facilitating bit rate selection using a single compression scheme. To avoid compression or decompression upon every data access, we employ a software write-back cache of uncompressed blocks. Our compressor has been designed with computational simplicity and speed in mind to allow for the possibility of a hardware implementation, and uses only a small number of fixed-point arithmetic operations per compressed value. We demonstrate the viability and benefits of lossy compression in several applications, including visualization, quantitative data analysis, and numerical simulation.

  9. Fabrication of a Silicon Nanowire on a Bulk Substrate by Use of a Plasma Etching and Total Ionizing Dose Effects on a Gate-All-Around Field-Effect Transistor

    Science.gov (United States)

    Moon, Dong-Il; Han, Jin-Woo; Meyyappan, Meyya

    2016-01-01

    The gate all around transistor is investigated through experiment. The suspended silicon nanowire for the next generation is fabricated on bulk substrate by plasma etching method. The scallop pattern generated by Bosch process is utilized to form a floating silicon nanowire. By combining anisotropic and istropic silicon etch process, the shape of nanowire is accurately controlled. From the suspended nanowire, the gate all around transistor is demonstrated. As the silicon nanowire is fully surrounded by the gate, the device shows excellent electrostatic characteristics.

  10. An electronically controlled automatic security access gate

    Directory of Open Access Journals (Sweden)

    Jonathan A. ENOKELA

    2014-11-01

    Full Text Available The security challenges being encountered in many places require electronic means of controlling access to communities, recreational centres, offices, and homes. The electronically controlled automated security access gate being proposed in this work helps to prevent an unwanted access to controlled environments. This is achieved mainly through the use of a Radio Frequency (RF transmitter-receiver pair. In the design a microcontroller is programmed to decode a given sequence of keys that is entered on a keypad and commands a transmitter module to send out this code as signal at a given radio frequency. Upon reception of this RF signal by the receiver module, another microcontroller activates a driver circuitry to operate the gate automatically. The codes for the microcontrollers were written in C language and were debugged and compiled using the KEIL Micro vision 4 integrated development environment. The resultant Hex files were programmed into the memories of the microcontrollers with the aid of a universal programmer. Software simulation was carried out using the Proteus Virtual System Modeling (VSM version 7.7. A scaled-down prototype of the system was built and tested. The electronically controlled automated security access gate can be useful in providing security for homes, organizations, and automobile terminals. The four-character password required to operate the gate gives the system an increased level of security. Due to its standalone nature of operation the system is cheaper to maintain in comparison with a manually operated type.

  11. 1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors

    Directory of Open Access Journals (Sweden)

    Guo-Neng Lu

    2009-01-01

    Full Text Available We present a single-transistor pixel for CMOS image sensors (CIS. It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation into this 1T pixel structure includes modeling to obtain analytical description of conversion gain. Model validation has been done by comparing theoretical predictions and experimental results. On the other hand, the 1T pixel structure has been implemented in different configurations, including rectangular-gate and ring-gate designs, and variations of oxidation parameters for the fabrication process. The pixel characteristics are presented and discussed.

  12. Investigation of a new low cost and low consumption single poly-silicon memory

    Directory of Open Access Journals (Sweden)

    Patrick Calenzo

    2010-10-01

    Full Text Available In this paper is presented an investigation on a new low cost and voltage consumption single poly-silicon memory cell for passive RFID (Radio Frequency IDentificationapplications. This structure is low cost due to its single poly-silicon design. This memory cell has two particularities : the first one is that no deported capacitor is necessary to program this cell which allows to reduce the structure size to 1.1μm². The second one is the way the cell is erased. A Zener diode is used to generate carriers in order to be injected into the floating gate. This Zener diode is one of the key points for the functionality that has to be validated with some electrical trials. These trials permit to integrate and use the Zener diodes measured in simulations of the complete memory cell. This is done to validate the best candidate between the Zener diodes used for the cell and highlight the efficiency in consumption and rapidity to erase the cell. Besides, the writing and the reading cases are simulated in order to show the low consumption required by the cell during these phases.

  13. Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs

    International Nuclear Information System (INIS)

    Luo Jie-Xin; Chen Jing; Zhou Jian-Hua; Wu Qing-Qing; Chai Zhan; Yu Tao; Wang Xi

    2012-01-01

    The hysteresis effect in the output characteristics, originating from the floating body effect, has been measured in partially depleted (PD) silicon-on-insulator (SOI) MOSFETs at different back-gate biases. I D hysteresis has been developed to clarify the hysteresis characteristics. The fabricated devices show the positive and negative peaks in the I D hysteresis. The experimental results show that the I D hysteresis is sensitive to the back gate bias in 0.13-μm PD SOI MOSFETs and does not vary monotonously with the back-gate bias. Based on the steady-state Shockley-Read-Hall (SRH) recombination theory, we have successfully interpreted the impact of the back-gate bias on the hysteresis effect in PD SOI MOSFETs. (condensed matter: structural, mechanical, and thermal properties)

  14. Floating seal system for rotary devices

    Science.gov (United States)

    Banasiuk, H.A.

    1983-08-23

    This invention relates to a floating seal system for rotary devices to reduce gas leakage around the rotary device in a duct and across the face of the rotary device to an adjacent duct. The peripheral seal bodies are made of resilient material having a generally U-shaped cross section wherein one of the legs is secured to a support member and the other of the legs forms a contacting seal against the rotary device. The legs of the peripheral seal form an extended angle of intersection of about 10[degree] to about 30[degree] in the unloaded condition to provide even sealing forces around the periphery of the rotary device. The peripheral seal extends around the periphery of the support member except where intersected by radial seals which reduce gas leakage across the face of the rotary device and between adjacent duct portions. The radial seal assembly is fabricated from channel bars, the smaller channel bar being secured to the divider of the support member and a larger inverted rigid floating channel bar having its legs freely movable over the legs of the smaller channel bar forming therewith a tubular channel. A resilient flexible tube is positioned within the tubular channel for substantially its full length to reduce gas leakage across the tubular channel. A spacer extends beyond the face of the floating channel near each end of the floating channel a distance to provide desired clearance between the floating channel and the face of the rotary device. 5 figs.

  15. Leaky Integrate and Fire Neuron by Charge-Discharge Dynamics in Floating-Body MOSFET.

    Science.gov (United States)

    Dutta, Sangya; Kumar, Vinay; Shukla, Aditya; Mohapatra, Nihar R; Ganguly, Udayan

    2017-08-15

    Neuro-biology inspired Spiking Neural Network (SNN) enables efficient learning and recognition tasks. To achieve a large scale network akin to biology, a power and area efficient electronic neuron is essential. Earlier, we had demonstrated an LIF neuron by a novel 4-terminal impact ionization based n+/p/n+ with an extended gate (gated-INPN) device by physics simulation. Excellent improvement in area and power compared to conventional analog circuit implementations was observed. In this paper, we propose and experimentally demonstrate a compact conventional 3-terminal partially depleted (PD) SOI- MOSFET (100 nm gate length) to replace the 4-terminal gated-INPN device. Impact ionization (II) induced floating body effect in SOI-MOSFET is used to capture LIF neuron behavior to demonstrate spiking frequency dependence on input. MHz operation enables attractive hardware acceleration compared to biology. Overall, conventional PD-SOI-CMOS technology enables very-large-scale-integration (VLSI) which is essential for biology scale (~10 11 neuron based) large neural networks.

  16. Amplifying genetic logic gates.

    Science.gov (United States)

    Bonnet, Jerome; Yin, Peter; Ortiz, Monica E; Subsoontorn, Pakpoom; Endy, Drew

    2013-05-03

    Organisms must process information encoded via developmental and environmental signals to survive and reproduce. Researchers have also engineered synthetic genetic logic to realize simpler, independent control of biological processes. We developed a three-terminal device architecture, termed the transcriptor, that uses bacteriophage serine integrases to control the flow of RNA polymerase along DNA. Integrase-mediated inversion or deletion of DNA encoding transcription terminators or a promoter modulates transcription rates. We realized permanent amplifying AND, NAND, OR, XOR, NOR, and XNOR gates actuated across common control signal ranges and sequential logic supporting autonomous cell-cell communication of DNA encoding distinct logic-gate states. The single-layer digital logic architecture developed here enables engineering of amplifying logic gates to control transcription rates within and across diverse organisms.

  17. Cardiac gated ventilation

    International Nuclear Information System (INIS)

    Hanson, C.W. III; Hoffman, E.A.

    1995-01-01

    There are several theoretic advantages to synchronizing positive pressure breaths with the cardiac cycle, including the potential for improving distribution of pulmonary and myocardial blood flow and enhancing cardiac output. The authors evaluated the effects of synchronizing respiration to the cardiac cycle using a programmable ventilator and electron beam CT (EBCT) scanning. The hearts of anesthetized dogs were imaged during cardiac gated respiration with a 50 msec scan aperture. Multi slice, short axis, dynamic image data sets spanning the apex to base of the left ventricle were evaluated to determine the volume of the left ventricular chamber at end-diastole and end-systole during apnea, systolic and diastolic cardiac gating. The authors observed an increase in cardiac output of up to 30% with inspiration gated to the systolic phase of the cardiac cycle in a non-failing model of the heart

  18. Dispersion measurements from Sofar floats on the Iberian Abyssal plain

    International Nuclear Information System (INIS)

    Rees, J.M.; Gmitrowicz, M.

    1989-01-01

    Tracks of SOFAR floats launched on the Iberian Abyssal Plain are presented. The floats were launched in two groups in early October 1984 and mid-February 1985 to a nominal depth of 2500 m. Of these floats, 4 from the first deployment and 2 from the second functioned properly. Float signals were recorded by four autonomous listening stations at a depth of 1900 m. These preliminary results show the tracks of floats up to July 1986 and represent 3600 float days of information. The main task of the experiment was to especially study the dispersion of radioactive substances

  19. Behavioural memory reconsolidation of food and fear memories.

    Science.gov (United States)

    Flavell, Charlotte R; Barber, David J; Lee, Jonathan L C

    2011-10-18

    The reactivation of a memory through retrieval can render it subject to disruption or modification through the process of memory reconsolidation. In both humans and rodents, briefly reactivating a fear memory results in effective erasure by subsequent extinction training. Here we show that a similar strategy is equally effective in the disruption of appetitive pavlovian cue-food memories. However, systemic administration of the NMDA receptor partial agonist D-cycloserine, under the same behavioural conditions, did not potentiate appetitive memory extinction, suggesting that reactivation does not enhance subsequent extinction learning. To confirm that reactivation followed by extinction reflects a behavioural analogue of memory reconsolidation, we show that prevention of contextual fear memory reactivation by the L-type voltage-gated calcium channel blocker nimodipine interferes with the amnestic outcome. Therefore, the reconsolidation process can be manipulated behaviourally to disrupt both aversive and appetitive memories. © 2011 Macmillan Publishers Limited. All rights reserved.

  20. Design of polarization encoded all-optical 4-valued MAX logic gate and its applications

    Science.gov (United States)

    Chattopadhyay, Tanay; Nath Roy, Jitendra

    2013-07-01

    Quaternary maximum (QMAX) gate is one type of multi-valued logic gate. An all-optical scheme of polarization encoded quaternary (4-valued) MAX logic gate with the help of Terahertz Optical Asymmetric Demultiplexer (TOAD) based fiber interferometric switch is proposed and described. For the quaternary information processing in optics, the quaternary number (0, 1, 2, 3) can be represented by four discrete polarized states of light. Numerical simulation result confirming the described methods is given in this paper. Some applications of MAX gate in logical operation and memory device are also given.

  1. Economic Floating Waste Detectionfor Surface Cleaning Robots

    Directory of Open Access Journals (Sweden)

    Sumroengrit Jakkrit

    2017-01-01

    Full Text Available Removing waste out of water surface is a routine task and can be operated by using autonomous surface cleaning robots. This paper presents amethodoflaser-based floating waste detection for surface robot guidance when waste positions are unknown beforehand. Basing on concept of refraction and reflection of laser ray, the proposed laser-based technique is proven to be applicable on floating waste detection. The economic waste detector is constructed and mounted on the robot. Five DOF equations of motion are formulated for calculation of waste position incorporating distance measured by the laser and also the robot motion caused by external wind force as well as water surface tension. Experiments were conducted on a pond with calm water and results show that the presented economic waste detection successfully identify and locate position of plastic bottles floating on water surface within the range of 5 meters.

  2. FLOAT2 WP4: Development of Materials

    DEFF Research Database (Denmark)

    Esteves, Luis Pedro; Aarup, Bendt

    This report refers to complementary material testing to support the design and production of UHPC floaters for installation in the Wave Star Machine under FLOAT2 project. The main objective of WP4 is the characterization of mechanical properties of fiber-reinforced UHPC.......This report refers to complementary material testing to support the design and production of UHPC floaters for installation in the Wave Star Machine under FLOAT2 project. The main objective of WP4 is the characterization of mechanical properties of fiber-reinforced UHPC....

  3. Effects of Electrolyte on Floating Water Bridge

    OpenAIRE

    Hideo Nishiumi; Fumitaka Honda

    2009-01-01

    Fuchs found phenomena that when high voltage is applied to deionized water filled in two contacted beakers, a floating water bridge forms spontaneously. In this paper, we examined flow direction of water bridge and what effects the addition of electrolytes such as NaCl, NaOH, and N H 4 C l to the floating water bridge would give. We found that ionization degree reduced the length of water bridge though insoluble electrolyte A l 2 O 3 had no effect on the length of water bridge.

  4. Gate valve performance prediction

    International Nuclear Information System (INIS)

    Harrison, D.H.; Damerell, P.S.; Wang, J.K.; Kalsi, M.S.; Wolfe, K.J.

    1994-01-01

    The Electric Power Research Institute is carrying out a program to improve the performance prediction methods for motor-operated valves. As part of this program, an analytical method to predict the stem thrust required to stroke a gate valve has been developed and has been assessed against data from gate valve tests. The method accounts for the loads applied to the disc by fluid flow and for the detailed mechanical interaction of the stem, disc, guides, and seats. To support development of the method, two separate-effects test programs were carried out. One test program determined friction coefficients for contacts between gate valve parts by using material specimens in controlled environments. The other test program investigated the interaction of the stem, disc, guides, and seat using a special fixture with full-sized gate valve parts. The method has been assessed against flow-loop and in-plant test data. These tests include valve sizes from 3 to 18 in. and cover a considerable range of flow, temperature, and differential pressure. Stem thrust predictions for the method bound measured results. In some cases, the bounding predictions are substantially higher than the stem loads required for valve operation, as a result of the bounding nature of the friction coefficients in the method

  5. Stanford, Duke, Rice,... and Gates?

    Science.gov (United States)

    Carey, Kevin

    2009-01-01

    This article presents an open letter to Bill Gates. In his letter, the author suggests that Bill Gates should build a brand-new university, a great 21st-century institution of higher learning. This university will be unlike anything the world has ever seen. He asks Bill Gates not to stop helping existing colleges create the higher-education system…

  6. Argo Float Data from the APDRC DAPPER Server, 1995-present

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — The floats are designed to drift at a fixed pressure (usually 1000 dbar) for 10 days. After this period, the floats move to a profiling pressure (usually between...

  7. Floating Inductance and FDNR Using Positive Polarity Current Conveyors

    Directory of Open Access Journals (Sweden)

    K. Pal

    2004-01-01

    Full Text Available A generalized circuit based on five positive polarity second-generation current conveyors is introduced. The circuit simulates a floating inductance, capacitor floatation circuit and floating fdnr. All these circuits use grounded capacitors.

  8. Double optical gating

    Science.gov (United States)

    Gilbertson, Steve

    The observation and control of dynamics in atomic and molecular targets requires the use of laser pulses with duration less than the characteristic timescale of the process which is to be manipulated. For electron dynamics, this time scale is on the order of attoseconds where 1 attosecond = 10 -18 seconds. In order to generate pulses on this time scale, different gating methods have been proposed. The idea is to extract or "gate" a single pulse from an attosecond pulse train and switch off all the other pulses. While previous methods have had some success, they are very difficult to implement and so far very few labs have access to these unique light sources. The purpose of this work is to introduce a new method, called double optical gating (DOG), and to demonstrate its effectiveness at generating high contrast single isolated attosecond pulses from multi-cycle lasers. First, the method is described in detail and is investigated in the spectral domain. The resulting attosecond pulses produced are then temporally characterized through attosecond streaking. A second method of gating, called generalized double optical gating (GDOG), is also introduced. This method allows attosecond pulse generation directly from a carrier-envelope phase un-stabilized laser system for the first time. Next the methods of DOG and GDOG are implemented in attosecond applications like high flux pulses and extreme broadband spectrum generation. Finally, the attosecond pulses themselves are used in experiments. First, an attosecond/femtosecond cross correlation is used for characterization of spatial and temporal properties of femtosecond pulses. Then, an attosecond pump, femtosecond probe experiment is conducted to observe and control electron dynamics in helium for the first time.

  9. Nanogranular SiO{sub 2} proton gated silicon layer transistor mimicking biological synapses

    Energy Technology Data Exchange (ETDEWEB)

    Liu, M. J.; Huang, G. S., E-mail: gshuang@fudan.edu.cn, E-mail: pfeng@nju.edu.cn; Guo, Q. L.; Tian, Z. A.; Li, G. J.; Mei, Y. F. [Department of Materials Science, Fudan University, Shanghai 200433 (China); Feng, P., E-mail: gshuang@fudan.edu.cn, E-mail: pfeng@nju.edu.cn; Shao, F.; Wan, Q. [School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China)

    2016-06-20

    Silicon on insulator (SOI)-based transistors gated by nanogranular SiO{sub 2} proton conducting electrolytes were fabricated to mimic synapse behaviors. This SOI-based device has both top proton gate and bottom buried oxide gate. Electrical transfer properties of top proton gate show hysteresis curves different from those of bottom gate, and therefore, excitatory post-synaptic current and paired pulse facilitation (PPF) behavior of biological synapses are mimicked. Moreover, we noticed that PPF index can be effectively tuned by the spike interval applied on the top proton gate. Synaptic behaviors and functions, like short-term memory, and its properties are also experimentally demonstrated in our device. Such SOI-based electronic synapses are promising for building neuromorphic systems.

  10. 14 CFR 25.753 - Main float design.

    Science.gov (United States)

    2010-01-01

    ... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Main float design. 25.753 Section 25.753 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION AIRCRAFT AIRWORTHINESS STANDARDS: TRANSPORT CATEGORY AIRPLANES Design and Construction Floats and Hulls § 25.753 Main float design...

  11. Validation of salinity data from ARGO floats: Comparison between the older ARGO floats and that of later deployments

    Digital Repository Service at National Institute of Oceanography (India)

    Youn, Y.-H.; Lee, H.; Chang, Y.-S.; Pankajakshan, T.

    Continued observation of ARGO floats or years (about 4 years) makes the conductivity sensor more vulnerable to fouling by marine life and associated drift in salinity measurements. In this paper, we address this issue by making use of floats...

  12. Dealing with Human Death: The Floating Perspective.

    Science.gov (United States)

    Kenyon, Gary M.

    1991-01-01

    Explores approach to dealing with human death. Describes floating perspective, based on insights from Choron and Jaspers, as suggesting it is possible to deal with human death by refraining from taking ultimate position on the problem. Position encourages openness to death. Examines role of anxiety and describes possible meaningful outcomes of…

  13. Gastroretentive Floating Microspheres of Silymarin: Preparation and ...

    African Journals Online (AJOL)

    Erah

    simulated gastric fluid for at least 12 h, and, therefore, could potentially ... systems (GRFDDS) have a bulk density ... The objective of this work was to develop and characterise gastroretentive floating microspheres of silymarin which, following oral administration, would exhibit .... hydrochloric acid to maintain sink conditions.

  14. Reis kosmosesse : [Floating-kambrist] / Marika Makarova

    Index Scriptorium Estoniae

    Makarova, Marika

    2011-01-01

    Ameerika psühholoogi John C. Lilly poolt kasutusele võetud Floating-kambrist ehk hõljumisvannist, mis aeglustab ajulaineid ning seeläbi aitab vähendada lihaspinget, stressi, ärevust, peavalusid, vererõhku ning parandada und, selgroo- ja kaelavigastusi, suurendada loovust ja heaolu jne

  15. A novel floating offshore wind turbine concept

    DEFF Research Database (Denmark)

    Vita, Luca; Schmidt Paulsen, Uwe; Friis Pedersen, Troels

    2009-01-01

    This paper will present a novel concept of a floating offshore wind turbine. The new concept is intended for vertical-axis wind turbine technology. The main purpose is to increase simplicity and to reduce total costs of an installed offshore wind farm. The concept is intended for deep water...... and large size turbines....

  16. Effects of Electrolyte on Floating Water Bridge

    Directory of Open Access Journals (Sweden)

    Hideo Nishiumi

    2009-01-01

    spontaneously. In this paper, we examined flow direction of water bridge and what effects the addition of electrolytes such as NaCl, NaOH, and NH4Cl to the floating water bridge would give. We found that ionization degree reduced the length of water bridge though insoluble electrolyte Al2O3 had no effect on the length of water bridge.

  17. IEEE Standard for Floating Point Numbers

    Indian Academy of Sciences (India)

    IAS Admin

    Floating point numbers are an important data type in compu- tation which is used ... quite large! Integers are ... exp, the value of the exponent will be taken as (exp –127). The ..... bit which is truncated is 1, add 1 to the least significant bit, else.

  18. Floating car data for traffic monitoring

    DEFF Research Database (Denmark)

    Torp, Kristian; Lahrmann, Harry Spaabæk

    2005-01-01

    This paper describes a complete prototype system that uses Floating Car Data (FCD) for both automatic and manual detection of queues in traffic. The system is developed under EU’s Tempo program. The systems consists of small hardware units placed in mobile traffic report units (we use taxis...

  19. Two New Families of Floating FDNR Circuits

    Directory of Open Access Journals (Sweden)

    Ahmed M. Soliman

    2010-01-01

    Full Text Available Two new configurations for realizing ideal floating frequency-dependent negative resistor elements (FDNR are introduced. The proposed circuits are symmetrical and are realizable by four CCII or ICCII or a combination of both. Each configuration is realizable by eight different circuits. Simulation results are included to support the theory.

  20. Floating plant dominance as a stable state

    NARCIS (Netherlands)

    Scheffer, M.; Szabo, S.; Gragnani, A.; Nes, van E.H.; Rinaldi, S.; Kautsky, N.; Norberg, J.; Roijackers, R.M.M.; Franken, R.J.M.

    2003-01-01

    The authors demonstrate that floating-plant dominance can be a self-stabilizing ecosystem state, which may explain its notorious persistence in many situations. Their results, based on experiments, field data, and models (in Dutch ditches and Lake Kariba, Zimbabwe), represent evidence for

  1. Floating convection barrier for evaporation source

    International Nuclear Information System (INIS)

    1975-01-01

    A floating matrix of titanium in an uranium evaporation source, melted by an electron beam, serves as a barrier for preventing cooler material from reaching the evaporation area. This construction allows a big volume of melted uranium to be present and new uranium to be furnished in regulated intervals without manual intervention

  2. Gastroretentive Floating Microspheres of Silymarin: Preparation and ...

    African Journals Online (AJOL)

    Methods: Cellulose microspheres – formulated with hydroxylpropyl methylcellulose (HPMC) and ethyl cellulose (EC) – and Eudragit microspheres – formulated with Eudragit® S 100 (ES) and Eudragit® RL (ERL) - were prepared by an emulsion-solvent evaporation method. The floating microspheres were evaluated for flow ...

  3. Development of floating strip micromegas detectors

    Energy Technology Data Exchange (ETDEWEB)

    Bortfeldt, Jonathan

    2014-04-28

    Micromegas are high-rate capable, high-resolution micro-pattern gaseous detectors. Square meter sized resistive strip Micromegas are foreseen as replacement of the currently used precision tracking detectors in the Small Wheel, which is part of the forward region of the ATLAS muon spectrometer. The replacement is necessary to ensure tracking and triggering performance of the muon spectrometer after the luminosity increase of the Large Hadron Collider beyond its design value of 10{sup 34} cm{sup -2}s{sup -1} around 2020. In this thesis a novel discharge tolerant floating strip Micromegas detector is presented and described. By individually powering copper anode strips, the effects of a discharge are confined to a small region of the detector. This reduces the impact of discharges on the efficiency by three orders of magnitude, compared to a standard Micromegas. The physics of the detector is studied and discussed in detail. Several detectors are developed: A 6.4 x 6.4 cm{sup 2} floating strip Micromegas with exchangeable SMD capacitors and resistors allows for an optimization of the floating strip principle. The discharge behavior is investigated on this device in depth. The microscopic structure of discharges is quantitatively explained by a detailed detector simulation. A 48 x 50 cm{sup 2} floating strip Micromegas is studied in high energy pion beams. Its homogeneity with respect to pulse height, efficiency and spatial resolution is investigated. The good performance in high-rate background environments is demonstrated in cosmic muon tracking measurements with a 6.4 x 6.4 cm{sup 2} floating strip Micromegas under lateral irradiation with 550 kHz 20 MeV proton beams. A floating strip Micromegas doublet with low material budget is developed for ion tracking without limitations from multiple scattering in imaging applications during medical ion therapy. Highly efficient tracking of 20 MeV protons at particle rates of 550 kHz is possible. The reconstruction of the

  4. Development of floating strip micromegas detectors

    International Nuclear Information System (INIS)

    Bortfeldt, Jonathan

    2014-01-01

    Micromegas are high-rate capable, high-resolution micro-pattern gaseous detectors. Square meter sized resistive strip Micromegas are foreseen as replacement of the currently used precision tracking detectors in the Small Wheel, which is part of the forward region of the ATLAS muon spectrometer. The replacement is necessary to ensure tracking and triggering performance of the muon spectrometer after the luminosity increase of the Large Hadron Collider beyond its design value of 10 34 cm -2 s -1 around 2020. In this thesis a novel discharge tolerant floating strip Micromegas detector is presented and described. By individually powering copper anode strips, the effects of a discharge are confined to a small region of the detector. This reduces the impact of discharges on the efficiency by three orders of magnitude, compared to a standard Micromegas. The physics of the detector is studied and discussed in detail. Several detectors are developed: A 6.4 x 6.4 cm 2 floating strip Micromegas with exchangeable SMD capacitors and resistors allows for an optimization of the floating strip principle. The discharge behavior is investigated on this device in depth. The microscopic structure of discharges is quantitatively explained by a detailed detector simulation. A 48 x 50 cm 2 floating strip Micromegas is studied in high energy pion beams. Its homogeneity with respect to pulse height, efficiency and spatial resolution is investigated. The good performance in high-rate background environments is demonstrated in cosmic muon tracking measurements with a 6.4 x 6.4 cm 2 floating strip Micromegas under lateral irradiation with 550 kHz 20 MeV proton beams. A floating strip Micromegas doublet with low material budget is developed for ion tracking without limitations from multiple scattering in imaging applications during medical ion therapy. Highly efficient tracking of 20 MeV protons at particle rates of 550 kHz is possible. The reconstruction of the track inclination in a single

  5. Applications of field-programmable gate arrays in scientific research

    CERN Document Server

    Sadrozinski, Hartmut F W

    2011-01-01

    Focusing on resource awareness in field-programmable gate array (FPGA) design, Applications of Field-Programmable Gate Arrays in Scientific Research covers the principle of FPGAs and their functionality. It explores a host of applications, ranging from small one-chip laboratory systems to large-scale applications in ""big science."" The book first describes various FPGA resources, including logic elements, RAM, multipliers, microprocessors, and content-addressable memory. It then presents principles and methods for controlling resources, such as process sequencing, location constraints, and in

  6. Protected quantum computing: interleaving gate operations with dynamical decoupling sequences.

    Science.gov (United States)

    Zhang, Jingfu; Souza, Alexandre M; Brandao, Frederico Dias; Suter, Dieter

    2014-02-07

    Implementing precise operations on quantum systems is one of the biggest challenges for building quantum devices in a noisy environment. Dynamical decoupling attenuates the destructive effect of the environmental noise, but so far, it has been used primarily in the context of quantum memories. Here, we experimentally demonstrate a general scheme for combining dynamical decoupling with quantum logical gate operations using the example of an electron-spin qubit of a single nitrogen-vacancy center in diamond. We achieve process fidelities >98% for gate times that are 2 orders of magnitude longer than the unprotected dephasing time T2.

  7. A Retina-Like Dual Band Organic Photosensor Array for Filter-Free Near-Infrared-to-Memory Operations.

    Science.gov (United States)

    Wang, Hanlin; Liu, Hongtao; Zhao, Qiang; Ni, Zhenjie; Zou, Ye; Yang, Jie; Wang, Lifeng; Sun, Yanqiu; Guo, Yunlong; Hu, Wenping; Liu, Yunqi

    2017-08-01

    Human eyes use retina photoreceptor cells to absorb and distinguish photons from different wavelengths to construct an image. Mimicry of such a process and extension of its spectral response into the near-infrared (NIR) is indispensable for night surveillance, retinal prosthetics, and medical imaging applications. Currently, NIR organic photosensors demand optical filters to reduce visible interference, thus making filter-free and anti-visible NIR imaging a challenging task. To solve this limitation, a filter-free and conformal, retina-inspired NIR organic photosensor is presented. Featuring an integration of photosensing and floating-gate memory modules, the device possesses an acute color distinguishing capability. In general, the retina-like photosensor transduces NIR (850 nm) into nonvolatile memory and acts as a dynamic photoswitch under green light (550 nm). In doing this, a filter-free but color-distinguishing photosensor is demonstrated that selectively converts NIR optical signals into nonvolatile memory. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Noise Gating Solar Images

    Science.gov (United States)

    DeForest, Craig; Seaton, Daniel B.; Darnell, John A.

    2017-08-01

    I present and demonstrate a new, general purpose post-processing technique, "3D noise gating", that can reduce image noise by an order of magnitude or more without effective loss of spatial or temporal resolution in typical solar applications.Nearly all scientific images are, ultimately, limited by noise. Noise can be direct Poisson "shot noise" from photon counting effects, or introduced by other means such as detector read noise. Noise is typically represented as a random variable (perhaps with location- or image-dependent characteristics) that is sampled once per pixel or once per resolution element of an image sequence. Noise limits many aspects of image analysis, including photometry, spatiotemporal resolution, feature identification, morphology extraction, and background modeling and separation.Identifying and separating noise from image signal is difficult. The common practice of blurring in space and/or time works because most image "signal" is concentrated in the low Fourier components of an image, while noise is evenly distributed. Blurring in space and/or time attenuates the high spatial and temporal frequencies, reducing noise at the expense of also attenuating image detail. Noise-gating exploits the same property -- "coherence" -- that we use to identify features in images, to separate image features from noise.Processing image sequences through 3-D noise gating results in spectacular (more than 10x) improvements in signal-to-noise ratio, while not blurring bright, resolved features in either space or time. This improves most types of image analysis, including feature identification, time sequence extraction, absolute and relative photometry (including differential emission measure analysis), feature tracking, computer vision, correlation tracking, background modeling, cross-scale analysis, visual display/presentation, and image compression.I will introduce noise gating, describe the method, and show examples from several instruments (including SDO

  9. A quantum Fredkin gate

    Science.gov (United States)

    Patel, Raj B.; Ho, Joseph; Ferreyrol, Franck; Ralph, Timothy C.; Pryde, Geoff J.

    2016-01-01

    Minimizing the resources required to build logic gates into useful processing circuits is key to realizing quantum computers. Although the salient features of a quantum computer have been shown in proof-of-principle experiments, difficulties in scaling quantum systems have made more complex operations intractable. This is exemplified in the classical Fredkin (controlled-SWAP) gate for which, despite theoretical proposals, no quantum analog has been realized. By adding control to the SWAP unitary, we use photonic qubit logic to demonstrate the first quantum Fredkin gate, which promises many applications in quantum information and measurement. We implement example algorithms and generate the highest-fidelity three-photon Greenberger-Horne-Zeilinger states to date. The technique we use allows one to add a control operation to a black-box unitary, something that is impossible in the standard circuit model. Our experiment represents the first use of this technique to control a two-qubit operation and paves the way for larger controlled circuits to be realized efficiently. PMID:27051868

  10. A quantum Fredkin gate.

    Science.gov (United States)

    Patel, Raj B; Ho, Joseph; Ferreyrol, Franck; Ralph, Timothy C; Pryde, Geoff J

    2016-03-01

    Minimizing the resources required to build logic gates into useful processing circuits is key to realizing quantum computers. Although the salient features of a quantum computer have been shown in proof-of-principle experiments, difficulties in scaling quantum systems have made more complex operations intractable. This is exemplified in the classical Fredkin (controlled-SWAP) gate for which, despite theoretical proposals, no quantum analog has been realized. By adding control to the SWAP unitary, we use photonic qubit logic to demonstrate the first quantum Fredkin gate, which promises many applications in quantum information and measurement. We implement example algorithms and generate the highest-fidelity three-photon Greenberger-Horne-Zeilinger states to date. The technique we use allows one to add a control operation to a black-box unitary, something that is impossible in the standard circuit model. Our experiment represents the first use of this technique to control a two-qubit operation and paves the way for larger controlled circuits to be realized efficiently.

  11. Multiple Independent Gate FETs: How Many Gates Do We Need?

    OpenAIRE

    Amarù, Luca; Hills, Gage; Gaillardon, Pierre-Emmanuel; Mitra, Subhasish; De Micheli, Giovanni

    2015-01-01

    Multiple Independent Gate Field Effect Transistors (MIGFETs) are expected to push FET technology further into the semiconductor roadmap. In a MIGFET, supplementary gates either provide (i) enhanced conduction properties or (ii) more intelligent switching functions. In general, each additional gate also introduces a side implementation cost. To enable more efficient digital systems, MIGFETs must leverage their expressive power to realize complex logic circuits with few physical resources. Rese...

  12. An Investigation of Quantum Dot Super Lattice Use in Nonvolatile Memory and Transistors

    Science.gov (United States)

    Mirdha, P.; Parthasarathy, B.; Kondo, J.; Chan, P.-Y.; Heller, E.; Jain, F. C.

    2018-02-01

    Site-specific self-assembled colloidal quantum dots (QDs) will deposit in two layers only on p-type substrate to form a QD superlattice (QDSL). The QDSL structure has been integrated into the floating gate of a nonvolatile memory component and has demonstrated promising results in multi-bit storage, ease of fabrication, and memory retention. Additionally, multi-valued logic devices and circuits have been created by using QDSL structures which demonstrated ternary and quaternary logic. With increasing use of site-specific self-assembled QDSLs, fundamental understanding of silicon and germanium QDSL charge storage capability, self-assembly on specific surfaces, uniform distribution, and mini-band formation has to be understood for successful implementation in devices. In this work, we investigate the differences in electron charge storage by building metal-oxide semiconductor (MOS) capacitors and using capacitance and voltage measurements to quantify the storage capabilities. The self-assembly process and distribution density of the QDSL is done by obtaining atomic force microscopy (AFM) results on line samples. Additionally, we present a summary of the theoretical density of states in each of the QDSLs.

  13. 100-nm gate lithography for double-gate transistors

    Science.gov (United States)

    Krasnoperova, Azalia A.; Zhang, Ying; Babich, Inna V.; Treichler, John; Yoon, Jung H.; Guarini, Kathryn; Solomon, Paul M.

    2001-09-01

    The double gate field effect transistor (FET) is an exploratory device that promises certain performance advantages compared to traditional CMOS FETs. It can be scaled down further than the traditional devices because of the greater electrostatic control by the gates on the channel (about twice as short a channel length for the same gate oxide thickness), has steeper sub-threshold slope and about double the current for the same width. This paper presents lithographic results for double gate FET's developed at IBM's T. J. Watson Research Center. The device is built on bonded wafers with top and bottom gates self-aligned to each other. The channel is sandwiched between the top and bottom polysilicon gates and the gate length is defined using DUV lithography. An alternating phase shift mask was used to pattern gates with critical dimensions of 75 nm, 100 nm and 125 nm in photoresist. 50 nm gates in photoresist have also been patterned by 20% over-exposure of nominal 100 nm lines. No trim mask was needed because of a specific way the device was laid out. UV110 photoresist from Shipley on AR-3 antireflective layer were used. Process windows, developed and etched patterns are presented.

  14. Voltage-Controlled Floating Resistor Using DDCC

    Directory of Open Access Journals (Sweden)

    M. Kumngern

    2011-04-01

    Full Text Available This paper presents a new simple configuration to realize the voltage-controlled floating resistor, which is suitable for integrated circuit implementation. The proposed resistor is composed of three main components: MOS transistor operating in the non-saturation region, DDCC, and MOS voltage divider. The MOS transistor operating in the non-saturation region is used to configure a floating linear resistor. The DDCC and the MOS transistor voltage divider are used for canceling the nonlinear component term of MOS transistor in the non-saturation region to obtain a linear current/voltage relationship. The DDCC is employed to provide a simple summer of the circuit. This circuit offers an ease for realizing the voltage divider circuit and the temperature effect that includes in term of threshold voltage can be compensated. The proposed configuration employs only 16 MOS transistors. The performances of the proposed circuit are simulated with PSPICE to confirm the presented theory.

  15. Fresh water generators onboard a floating platform

    International Nuclear Information System (INIS)

    Tewari, P.K.; Verma, R.K.; Misra, B.M.; Sadhulkan, H.K.

    1997-01-01

    A dependable supply of fresh water is essential for any ocean going vessel. The operating and maintenance personnel on offshore platforms and marine structures also require a constant and regular supply of fresh water to meet their essential daily needs. A seawater thermal desalination unit onboard delivers good quality fresh water from seawater. The desalination units developed by Bhabha Atomic Research Centre (BARC) suitable for ocean going vessels and offshore platforms have been discussed. Design considerations of such units with reference to floating platforms and corrosive environments have been presented. The feasibility of coupling a low temperature vacuum evaporation (LTVE) desalination plant suitable for an onboard floating platform to a PHWR nuclear power plant has also been discussed. (author). 1 ref., 3 figs, 2 tabs

  16. Memory operation mechanism of fullerene-containing polymer memory

    Energy Technology Data Exchange (ETDEWEB)

    Nakajima, Anri, E-mail: anakajima@hiroshima-u.ac.jp; Fujii, Daiki [Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527 (Japan)

    2015-03-09

    The memory operation mechanism in fullerene-containing nanocomposite gate insulators was investigated while varying the kind of fullerene in a polymer gate insulator. It was cleared what kind of traps and which positions in the nanocomposite the injected electrons or holes are stored in. The reason for the difference in the easiness of programming was clarified taking the role of the charging energy of an injected electron into account. The dependence of the carrier dynamics on the kind of fullerene molecule was investigated. A nonuniform distribution of injected carriers occurred after application of a large magnitude programming voltage due to the width distribution of the polystyrene barrier between adjacent fullerene molecules. Through the investigations, we demonstrated a nanocomposite gate with fullerene molecules having excellent retention characteristics and a programming capability. This will lead to the realization of practical organic memories with fullerene-containing polymer nanocomposites.

  17. Spectral analysis of Floating Car Data

    OpenAIRE

    Gössel, F.; Michler, E.; Wrase, B.

    2003-01-01

    Floating Car Data (FCD) are one important data source in traffic telematic systems. The original variable in these systems is the vehicle velocity. The paper analyses the measured value “vehicle velocity" by methods of information technology. Consequences for processing, transmission and storage of FCD under condition of limited resources are discussed. Starting point of the investigation is the analysis of spectral characteristics of velocity-time-profiles. The spectra are determined by...

  18. Ships as future floating farm systems?

    Science.gov (United States)

    Moustafa, Khaled

    2018-04-03

    Environmental and agriculture challenges such as severe drought, desertification, sprawling cities and shrinking arable lands in large regions in the world compel us to think about alternative and sustainable farming systems. Ongoing projects to build floating cities in the sea suggest that building specific ships for farming purposes (as farming ships or farming boats) would also be attainable to introduce new farming surfaces and boost food production worldwide to cope with food insecurity issues.

  19. Traumatic Floating Clavicle: A Case Report

    Directory of Open Access Journals (Sweden)

    Choo CY

    2012-07-01

    Full Text Available Shoulder girdle injuries after high energy traumatic impacts to the shoulder have been well documented. Based on the series of 1603 injuries of the shoulder girdle reported by Cave and colleagues, 85% of the dislocations were glenohumeral, 12% acromioclavicular and 3% sternoclavicular. Less frequently described are injuries involving both the sternoclavicular and acromioclavicular joints simultaneously in one extremity. The present case report discusses a case of traumatic floating clavicle associated with ipsilateral forearm and wrist injury which was treated surgically.

  20. Floating nuclear power plant safety assurance principles

    International Nuclear Information System (INIS)

    Zvonarev, B.M.; Kuchin, N.L.; Sergeev, I.V.

    1993-01-01

    In the north regions of the Russian federation and low density population areas, there is a real necessity for ecological clean energy small power sources. For this purpose, floating nuclear power plants, designed on the basis of atomic ship building engineering, are being conceptualized. It is possible to use the ship building plants for the reactor purposes. Issues such as radioactive waste management are described

  1. Collector floating potentials in a discharge plasma

    International Nuclear Information System (INIS)

    Cercek, M.; Gyergyek, T.

    1999-01-01

    We present the results of a study on electrode floating potential formation in a hot-cathode discharge plasma. The electron component of the plasma is composed from two populations. The high temperature component develops from primary electrons and the cool component from secondary electrons born by ionisation of cold neutral gas. A static, kinetic plasma-sheath model is use to calculate the pre-sheath potential and the floating potential of the electrode. For hot primary electrons a truncated Maxwellian distribution is assumed. The plasma system is also modelled numerically with a dynamic, electrostatic particle simulation. The plasma source injects temporally equal fluxes of ions and electrons with half-Maxwellian velocities. Again, the hot electron distribution is truncated in the high velocity tail. The plasma parameters, such as ion temperature and mass, electron temperatures, discharge voltages, etc. correspond to experimental values. The experimental measurements of the electrode floating potential are performed in weakly magnetised plasma produced with hot cathode discharge in argon gas. Theoretical, simulation and experimental results are compared and they agree very well.(author)

  2. Turbomachinery systems for floating production applications

    Energy Technology Data Exchange (ETDEWEB)

    Windt, Jonathan P.; Kurz, Rainer [Solar Turbines Incorporated, San Diego, CA (United States)

    2008-07-01

    Since 1995 there has been a dramatic increase in oil and gas exploration and production using floating platforms in deeper waters located further offshore. This exploration started with tension leg platforms, progressed through SPARs and Semi-Submersibles, and later evolved into Floating Production Storage and Offloading (FPSO) vessels. Turbomachinery equipment installed on a floating platform or vessel will be expected to operate in the same manner as a land based machine, but in a variety of climate and environmental conditions that now includes motion. To operate successfully, specific design considerations for the turbo-machinery packages are required. It is critical to take into account the type of vessel, the expected list, trim and dynamic motion angles, the dynamic forces applied, the expected deck deflection as a result of those forces, understand the applicable class requirement, and where the equipment will be located on the vessel. This information is then translated into the design conditions to determine the type of mounting method to be used to attach the turbo-machinery package to the deck, the expected accelerations for structural analysis, and oil tank and system designs for fluid management. Furthermore, compressor designs need to allow utmost flexibility to adapt to changing operating conditions. (author)

  3. Expert Oracle GoldenGate

    CERN Document Server

    Prusinski, Ben; Chung, Richard

    2011-01-01

    Expert Oracle GoldenGate is a hands-on guide to creating and managing complex data replication environments using the latest in database replication technology from Oracle. GoldenGate is the future in replication technology from Oracle, and aims to be best-of-breed. GoldenGate supports homogeneous replication between Oracle databases. It supports heterogeneous replication involving other brands such as Microsoft SQL Server and IBM DB2 Universal Server. GoldenGate is high-speed, bidirectional, highly-parallelized, and makes only a light impact on the performance of databases involved in replica

  4. Real-Time Spaceborne Synthetic Aperture Radar Float-Point Imaging System Using Optimized Mapping Methodology and a Multi-Node Parallel Accelerating Technique

    Science.gov (United States)

    Li, Bingyi; Chen, Liang; Yu, Wenyue; Xie, Yizhuang; Bian, Mingming; Zhang, Qingjun; Pang, Long

    2018-01-01

    With the development of satellite load technology and very large-scale integrated (VLSI) circuit technology, on-board real-time synthetic aperture radar (SAR) imaging systems have facilitated rapid response to disasters. A key goal of the on-board SAR imaging system design is to achieve high real-time processing performance under severe size, weight, and power consumption constraints. This paper presents a multi-node prototype system for real-time SAR imaging processing. We decompose the commonly used chirp scaling (CS) SAR imaging algorithm into two parts according to the computing features. The linearization and logic-memory optimum allocation methods are adopted to realize the nonlinear part in a reconfigurable structure, and the two-part bandwidth balance method is used to realize the linear part. Thus, float-point SAR imaging processing can be integrated into a single Field Programmable Gate Array (FPGA) chip instead of relying on distributed technologies. A single-processing node requires 10.6 s and consumes 17 W to focus on 25-km swath width, 5-m resolution stripmap SAR raw data with a granularity of 16,384 × 16,384. The design methodology of the multi-FPGA parallel accelerating system under the real-time principle is introduced. As a proof of concept, a prototype with four processing nodes and one master node is implemented using a Xilinx xc6vlx315t FPGA. The weight and volume of one single machine are 10 kg and 32 cm × 24 cm × 20 cm, respectively, and the power consumption is under 100 W. The real-time performance of the proposed design is demonstrated on Chinese Gaofen-3 stripmap continuous imaging. PMID:29495637

  5. Floating Oil-Spill Containment Device

    Science.gov (United States)

    Jones, Jack A.

    2012-01-01

    Previous oil containment booms have an open top that allows natural gas to escape, and have significant oil leakage due to wave action. Also, a subsea pyramid oil trap exists, but cannot move relative to moving oil plumes from deepsea oil leaks. The solution is to have large, moveable oil traps. One version floats on the sea surface and has a flexible tarp cover and a lower weighted skirt to completely entrap the floating oil and natural gas. The device must have at least three sides with boats pulling at each apex, and sonar or other system to track the slowly moving oil plume, so that the boats can properly locate the booms. The oil trap device must also have a means for removal of the oil and the natural gas. A second design version has a flexible pyramid cover that is attached by lines to ballast on the ocean floor. This is similar to fixed, metal pyramid oil capture devices in the Santa Barbara Channel off the coast of California. The ballast lines for the improved design, however, would have winches that can move the pyramid to always be located above the oil and gas plume. A third design is a combination of the first two. It uses a submerged pyramid to trap oil, but has no anchor and uses boats to locate the trap. It has ballast weights located along the bottom of the tarp and/or at the corners of the trap. The improved floating oil-spill containment device has a large floating boom and weighted skirt surrounding the oil and gas entrapment area. The device is triangular (or more than three sides) and has a flexible tarp cover with a raised gas vent area. Boats pull on the apex of the triangles to maintain tension and to allow the device to move to optimum locations to trap oil and gas. The gas is retrieved from a higher buoyant part of the tarp, and oil is retrieved from the floating oil layer contained in the device. These devices can be operated in relatively severe weather, since waves will break over the devices without causing oil leaking. Also, natural

  6. A novel optical gating method for laser gated imaging

    Science.gov (United States)

    Ginat, Ran; Schneider, Ron; Zohar, Eyal; Nesher, Ofer

    2013-06-01

    For the past 15 years, Elbit Systems is developing time-resolved active laser-gated imaging (LGI) systems for various applications. Traditional LGI systems are based on high sensitive gated sensors, synchronized to pulsed laser sources. Elbit propriety multi-pulse per frame method, which is being implemented in LGI systems, improves significantly the imaging quality. A significant characteristic of the LGI is its ability to penetrate a disturbing media, such as rain, haze and some fog types. Current LGI systems are based on image intensifier (II) sensors, limiting the system in spectral response, image quality, reliability and cost. A novel propriety optical gating module was developed in Elbit, untying the dependency of LGI system on II. The optical gating module is not bounded to the radiance wavelength and positioned between the system optics and the sensor. This optical gating method supports the use of conventional solid state sensors. By selecting the appropriate solid state sensor, the new LGI systems can operate at any desired wavelength. In this paper we present the new gating method characteristics, performance and its advantages over the II gating method. The use of the gated imaging systems is described in a variety of applications, including results from latest field experiments.

  7. The use of ZFP lossy floating point data compression in tornado-resolving thunderstorm simulations

    Science.gov (United States)

    Orf, L.

    2017-12-01

    In the field of atmospheric science, numerical models are used to produce forecasts of weather and climate and serve as virtual laboratories for scientists studying atmospheric phenomena. In both operational and research arenas, atmospheric simulations exploiting modern supercomputing hardware can produce a tremendous amount of data. During model execution, the transfer of floating point data from memory to the file system is often a significant bottleneck where I/O can dominate wallclock time. One way to reduce the I/O footprint is to compress the floating point data, which reduces amount of data saved to the file system. In this presentation we introduce LOFS, a file system developed specifically for use in three-dimensional numerical weather models that are run on massively parallel supercomputers. LOFS utilizes the core (in-memory buffered) HDF5 driver and includes compression options including ZFP, a lossy floating point data compression algorithm. ZFP offers several mechanisms for specifying the amount of lossy compression to be applied to floating point data, including the ability to specify the maximum absolute error allowed in each compressed 3D array. We explore different maximum error tolerances in a tornado-resolving supercell thunderstorm simulation for model variables including cloud and precipitation, temperature, wind velocity and vorticity magnitude. We find that average compression ratios exceeding 20:1 in scientifically interesting regions of the simulation domain produce visually identical results to uncompressed data in visualizations and plots. Since LOFS splits the model domain across many files, compression ratios for a given error tolerance can be compared across different locations within the model domain. We find that regions of high spatial variability (which tend to be where scientifically interesting things are occurring) show the lowest compression ratios, whereas regions of the domain with little spatial variability compress

  8. An ultra-low-power area-efficient non-volatile memory in a 0.18 μm single-poly CMOS process for passive RFID tags

    International Nuclear Information System (INIS)

    Jia Xiaoyun; Feng Peng; Zhang Shengguang; Wu Nanjian; Zhao Baiqin; Liu Su

    2013-01-01

    This paper presents an ultra-low-power area-efficient non-volatile memory (NVM) in a 0.18 μm single-poly standard CMOS process for passive radio frequency identification (RFID) tags. In the memory cell, a novel low-power operation method is proposed to realize bi-directional Fowler—Nordheim tunneling during write operation. Furthermore, the cell is designed with PMOS transistors and coupling capacitors to minimize its area. In order to improve its reliability, the cell consists of double floating gates to store the data, and the 1 kbit NVM was implemented in a 0.18 μm single-poly standard CMOS process. The area of the memory cell and 1 kbit memory array is 96 μm 2 and 0.12 mm 2 , respectively. The measured results indicate that the program/erase voltage ranges from 5 to 6 V The power consumption of the read/write operation is 0.19 μW/0.69 μW at a read/write rate of (268 kb/s)/(3.0 kb/s). (semiconductor integrated circuits)

  9. Compensated readout for high-density MOS-gated memristor crossbar array

    KAUST Repository

    Zidan, Mohammed A.

    2015-01-01

    Leakage current is one of the main challenges facing high-density MOS-gated memristor arrays. In this study, we show that leakage current ruins the memory readout process for high-density arrays, and analyze the tradeoff between the array density and its power consumption. We propose a novel readout technique and its underlying circuitry, which is able to compensate for the transistor leakage-current effect in the high-density gated memristor array.

  10. Investigation of Tank 241-AW-104 Composite Floating Layer

    Energy Technology Data Exchange (ETDEWEB)

    Meznarich, H. K. [Washington River Protection Solutions LLC (WRPS), Richland, WA (United States); Bolling, S. D. [Washington River Protection Solutions LLC (WRPS), Richland, WA (United States); Lachut, J. S. [Washington River Protection Solutions LLC (WRPS), Richland, WA (United States); Cooke, G. A. [Washington River Protection Solutions LLC (WRPS), Richland, WA (United States)

    2018-02-27

    Seven grab samples and one field blank were taken from Tank 241-AW-104 (AW-104) on June 2, 2017, and received at 222-S Laboratory on June 5, 2017. A visible layer with brown solids was observed floating on the top of two surface tank waste samples (4AW-17-02 and 4AW 17 02DUP). The floating layer from both samples was collected, composited, and submitted for chemical analyses and solid phase characterization in order to understand the composition of the floating layer. Tributyl phosphate and tridecane were higher in the floating layer than in the aqueous phase. Density in the floating layer was slightly lower than the mean density of all grab samples. Sodium nitrate and sodium carbonate were major components with a trace of gibbsite and very small size agglomerates were present in the solids of the floating layer. The supernate consisted of organics, soluble salt, and particulates.

  11. Architectures for a quantum random access memory

    OpenAIRE

    Giovannetti, Vittorio; Lloyd, Seth; Maccone, Lorenzo

    2008-01-01

    A random access memory, or RAM, is a device that, when interrogated, returns the content of a memory location in a memory array. A quantum RAM, or qRAM, allows one to access superpositions of memory sites, which may contain either quantum or classical information. RAMs and qRAMs with n-bit addresses can access 2^n memory sites. Any design for a RAM or qRAM then requires O(2^n) two-bit logic gates. At first sight this requirement might seem to make large scale quantum versions of such devices ...

  12. Penn State DOE GATE Program

    Energy Technology Data Exchange (ETDEWEB)

    Anstrom, Joel

    2012-08-31

    The Graduate Automotive Technology Education (GATE) Program at The Pennsylvania State University (Penn State) was established in October 1998 pursuant to an award from the U.S. Department of Energy (U.S. DOE). The focus area of the Penn State GATE Program is advanced energy storage systems for electric and hybrid vehicles.

  13. Piezoconductivity of gated suspended graphene

    NARCIS (Netherlands)

    Medvedyeva, M.V.; Blanter, Y.M.

    2011-01-01

    We investigate the conductivity of graphene sheet deformed over a gate. The effect of the deformation on the conductivity is twofold: The lattice distortion can be represented as pseudovector potential in the Dirac equation formalism, whereas the gate causes inhomogeneous density redistribution. We

  14. The floating knee: epidemiology, prognostic indicators & outcome following surgical management

    OpenAIRE

    Yesupalan Rajam S; Rethnam Ulfin; Nair Rajagopalan

    2007-01-01

    Abstract Background Floating Knee injuries are complex injuries. The type of fractures, soft tissue and associated injuries make this a challenging problem to manage. We present the outcome of these injuries after surgical management. Methods 29 patients with floating knee injuries were managed over a 3 year period. This was a prospective study were both fractures of the floating knee injury were surgically fixed using different modalities. The associated injuries were managed appropriately. ...

  15. On photonic controlled phase gates

    International Nuclear Information System (INIS)

    Kieling, K; Eisert, J; O'Brien, J L

    2010-01-01

    As primitives for entanglement generation, controlled phase gates have a central role in quantum computing. Especially in ideas realizing instances of quantum computation in linear optical gate arrays, a closer look can be rewarding. In such architectures, all effective nonlinearities are induced by measurements. Hence the probability of success is a crucial parameter of such quantum gates. In this paper, we discuss this question for controlled phase gates that implement an arbitrary phase with one and two control qubits. Within the class of post-selected gates in dual-rail encoding with vacuum ancillas, we identify the optimal success probabilities. We construct networks that allow for implementation using current experimental capabilities in detail. The methods employed here appear specifically useful with the advent of integrated linear optical circuits, providing stable interferometers on monolithic structures.

  16. GATE: Improving the computational efficiency

    International Nuclear Information System (INIS)

    Staelens, S.; De Beenhouwer, J.; Kruecker, D.; Maigne, L.; Rannou, F.; Ferrer, L.; D'Asseler, Y.; Buvat, I.; Lemahieu, I.

    2006-01-01

    GATE is a software dedicated to Monte Carlo simulations in Single Photon Emission Computed Tomography (SPECT) and Positron Emission Tomography (PET). An important disadvantage of those simulations is the fundamental burden of computation time. This manuscript describes three different techniques in order to improve the efficiency of those simulations. Firstly, the implementation of variance reduction techniques (VRTs), more specifically the incorporation of geometrical importance sampling, is discussed. After this, the newly designed cluster version of the GATE software is described. The experiments have shown that GATE simulations scale very well on a cluster of homogeneous computers. Finally, an elaboration on the deployment of GATE on the Enabling Grids for E-Science in Europe (EGEE) grid will conclude the description of efficiency enhancement efforts. The three aforementioned methods improve the efficiency of GATE to a large extent and make realistic patient-specific overnight Monte Carlo simulations achievable

  17. Stress analysis and mitigation measures for floating pipeline

    Science.gov (United States)

    Wenpeng, Guo; Yuqing, Liu; Chao, Li

    2017-03-01

    Pipeline-floating is a kind of accident with contingency and uncertainty associated to natural gas pipeline occurring during rainy season, which is significantly harmful to the safety of pipeline. Treatment measures against pipeline floating accident are summarized in this paper on the basis of practical project cases. Stress states of pipeline upon floating are analyzed by means of Finite Element Calculation method. The effectiveness of prevention ways and subsequent mitigation measures upon pipeline-floating are verified for giving guidance to the mitigation of such accidents.

  18. Gating based on internal/external signals with dynamic correlation updates

    International Nuclear Information System (INIS)

    Wu Huanmei; Zhao Qingya; Berbeco, Ross I; Nishioka, Seiko; Shirato, Hiroki; Jiang, Steve B

    2008-01-01

    Precise localization of mobile tumor positions in real time is critical to the success of gated radiotherapy. Tumor positions are usually derived from either internal or external surrogates. Fluoroscopic gating based on internal surrogates, such as implanted fiducial markers, is accurate however requiring a large amount of imaging dose. Gating based on external surrogates, such as patient abdominal surface motion, is non-invasive however less accurate due to the uncertainty in the correlation between tumor location and external surrogates. To address these complications, we propose to investigate an approach based on hybrid gating with dynamic internal/external correlation updates. In this approach, the external signal is acquired at high frequency (such as 30 Hz) while the internal signal is sparsely acquired (such as 0.5 Hz or less). The internal signal is used to validate and update the internal/external correlation during treatment. Tumor positions are derived from the external signal based on the newly updated correlation. Two dynamic correlation updating algorithms are introduced. One is based on the motion amplitude and the other is based on the motion phase. Nine patients with synchronized internal/external motion signals are simulated retrospectively to evaluate the effectiveness of hybrid gating. The influences of different clinical conditions on hybrid gating, such as the size of gating windows, the optimal timing for internal signal acquisition and the acquisition frequency are investigated. The results demonstrate that dynamically updating the internal/external correlation in or around the gating window will reduce false positive with relatively diminished treatment efficiency. This improvement will benefit patients with mobile tumors, especially greater for early stage lung cancers, for which the tumors are less attached or freely floating in the lung.

  19. Gating based on internal/external signals with dynamic correlation updates

    Energy Technology Data Exchange (ETDEWEB)

    Wu Huanmei [Purdue School of Engineering and Technology, Indiana University School of Informatics, IUPUI, Indianapolis, IN (United States); Zhao Qingya [School of Health Sciences, Purdue University, West Lafayette, IN (United States); Berbeco, Ross I [Department of Radiation Oncology, Dana-Farber/Brigham and Womens Cancer Center and Harvard Medical School, Boston, MA (United States); Nishioka, Seiko [NTT East-Japan Sapporo Hospital, Sapporo (Japan); Shirato, Hiroki [Hokkaido University Graduate School of Medicine, Sapporo (Japan); Jiang, Steve B [Department of Radiation Oncology, School of Medicine, University of California, San Diego, CA (United States)], E-mail: hw9@iupui.edu, E-mail: sbjiang@ucsd.edu

    2008-12-21

    Precise localization of mobile tumor positions in real time is critical to the success of gated radiotherapy. Tumor positions are usually derived from either internal or external surrogates. Fluoroscopic gating based on internal surrogates, such as implanted fiducial markers, is accurate however requiring a large amount of imaging dose. Gating based on external surrogates, such as patient abdominal surface motion, is non-invasive however less accurate due to the uncertainty in the correlation between tumor location and external surrogates. To address these complications, we propose to investigate an approach based on hybrid gating with dynamic internal/external correlation updates. In this approach, the external signal is acquired at high frequency (such as 30 Hz) while the internal signal is sparsely acquired (such as 0.5 Hz or less). The internal signal is used to validate and update the internal/external correlation during treatment. Tumor positions are derived from the external signal based on the newly updated correlation. Two dynamic correlation updating algorithms are introduced. One is based on the motion amplitude and the other is based on the motion phase. Nine patients with synchronized internal/external motion signals are simulated retrospectively to evaluate the effectiveness of hybrid gating. The influences of different clinical conditions on hybrid gating, such as the size of gating windows, the optimal timing for internal signal acquisition and the acquisition frequency are investigated. The results demonstrate that dynamically updating the internal/external correlation in or around the gating window will reduce false positive with relatively diminished treatment efficiency. This improvement will benefit patients with mobile tumors, especially greater for early stage lung cancers, for which the tumors are less attached or freely floating in the lung.

  20. Advantages of floating covers with LLDPE Liners

    International Nuclear Information System (INIS)

    Munoz Gomez, J. M.

    2014-01-01

    Using floating covers in irrigation pounds and waste dam gives many advantages. It is a very interesting investment for those place with a high evaporation ratio. this is an easy system which improves several aspects in irrigation or drinkable water reservoirs, mainly it saves water and it saves clean-works (time and cost). It is also used in waste dam to deodorization. Time ago this application was developed with PVC liners and TPO liners, now the innovation is LLDPE liners which improve mechanical properties, durability and an easier installation. This paper develops the state of art of this design technology, and the back ground of our experience. (Author)

  1. Horizontal, floating, plastic hose oil skimmer

    Energy Technology Data Exchange (ETDEWEB)

    1978-04-01

    A horizontal, floating, plastic hose oil skimmer operates at -20/sup 0/ to +100/sup 0/C as a moving belt driven by a motor at 0.7 kw at 1400 rpm to pick up oil by adhesion from a surface such as that of used cooling water or cutting oil for subsequent stripping and collection by gravity flow. Two models provide collection rates of 10-45 l./hr for diesel oil, 35-115 l./hr for hydraulic oil, and 170-455 l./hr for gear oils and heavy heating oils.

  2. Experiments in a floating water bridge

    Science.gov (United States)

    Woisetschläger, Jakob; Gatterer, Karl; Fuchs, Elmar C.

    2010-01-01

    In a high-voltage direct-current experiment, a watery connection formed between two beakers filled with deionized water, giving the impression of a `floating water bridge'. Having a few millimeters diameter and up to 2.5 cm length, this watery connection reveals a number of interesting phenomena currently discussed in water science. Focusing on optical measurement techniques, the flow through the bridge was visualized and data were recorded such as flow velocity and directions, heat production, density fluctuations, pH values, drag force and mass transfer. To provide a better understanding of the basic phenomena involved the discussion references related literature.

  3. Dynamics of the floating water bridge

    International Nuclear Information System (INIS)

    Fuchs, Elmar C; Gatterer, Karl; Holler, Gert; Woisetschlaeger, Jakob

    2008-01-01

    When high voltage is applied to distilled water filled into two beakers close to each other, a water connection forms spontaneously, giving the impression of a floating water bridge (Fuchs et al 2007 J. Phys. D: Appl. Phys. 40 6112-4). This phenomenon is of special interest, since it comprises a number of phenomena currently tackled in modern water science. The build-up mechanism, the chemical properties and the dynamics of this bridge as well as related additional phenomena are presented and discussed

  4. The floating desalination complex GEYSER-1

    International Nuclear Information System (INIS)

    Vorobyov, V.M.

    1997-01-01

    A conventional floating desalination complex, GEYSER-1, is presented which is capable of producing 40,000 cubic meters per day (m 3 /d) of fresh water from brackish water or seawater. The complex includes a water intake system, a preliminary water preparation system, a high-pressure pump house and a power installation based on diesel or a gas turbines with service equipment. GEYSER-1 can be transported to the place of operation either by a heavy lift ship or by towing. (author)

  5. Floating Foundations for Offshore Wind Turbines

    DEFF Research Database (Denmark)

    Andersen, Morten Thøtt

    The concept of harnessing the power of the wind dates all the way back to the first ships traversing the seas. Later, windmills enabled the use of wind power for industrial purposes. Since then, technology has allowed the production of clean renewable energy through the use of wind turbines....... These turbines have traditionally been placed on land, but several factors have urged a move to offshore locations. Now the boundaries are being pushed into deeper and deeper waters, where the idea of floating offshore wind turbines has emerged. In less than a decade, these have gone from scattered small...

  6. Floating retained root lesion mimicking apical periodontitis.

    Science.gov (United States)

    Chung, Ming-Pang; Chen, Chih-Ping; Shieh, Yi-Shing

    2009-10-01

    A case of a retained root tip simulating apical periodontitis on radiographic examination is described. The retained root tip, originating from the left lower first molar, floated under the left lower second premolar apical region mimicking apical periodontitis. It appeared as an ill-defined periapical radiolucency containing a smaller radiodense mass on radiograph. The differential diagnosis included focal sclerosing osteomyelitis (condensing osteitis) and ossifying fibroma. Upon exicisional biopsy, a retained root associated with granulation tissue was found. After 1-year follow-up, the patient was asymptomatic and the periradicular lesion was healing. Meanwhile, the associated tooth showed a normal response to stimulation testing.

  7. Near-Shore Floating Wave Energy Converters

    DEFF Research Database (Denmark)

    Ruol, Piero; Zanuttigh, Barbara; Martinelli, Luca

    2011-01-01

    and transmission characteristics are approximated to functions of wave height, period and obliquity. Their order of magnitude are 20% and 80%, respectively. It is imagined that an array of DEXA is deployed in front of Marina di Ravenna beach (IT), a highly touristic site of the Adriatic Coast. Based on the CERC......Aim of this note is to analyse the possible application of a Wave Energy Converter (WEC) as a combined tool to protect the coast and harvest energy. Physical model tests are used to evaluate wave transmission past a near-shore floating WEC of the wave activated body type, named DEXA. Efficiency...

  8. Gated equilibrium bloodpool scintigraphy

    International Nuclear Information System (INIS)

    Reinders Folmer, S.C.C.

    1981-01-01

    This thesis deals with the clinical applications of gated equilibrium bloodpool scintigraphy, performed with either a gamma camera or a portable detector system, the nuclear stethoscope. The main goal has been to define the value and limitations of noninvasive measurements of left ventricular ejection fraction as a parameter of cardiac performance in various disease states, both for diagnostic purposes as well as during follow-up after medical or surgical intervention. Secondly, it was attempted to extend the use of the equilibrium bloodpool techniques beyond the calculation of ejection fraction alone by considering the feasibility to determine ventricular volumes and by including the possibility of quantifying valvular regurgitation. In both cases, it has been tried to broaden the perspective of the observations by comparing them with results of other, invasive and non-invasive, procedures, in particular cardiac catheterization, M-mode echocardiography and myocardial perfusion scintigraphy. (Auth.)

  9. The Coarse-Grained/Fine-Grained Logic Interface in FPGAs with Embedded Floating-Point Arithmetic Units

    Directory of Open Access Journals (Sweden)

    Chi Wai Yu

    2008-01-01

    Full Text Available This paper examines the interface between fine-grained and coarse-grained programmable logic in FPGAs. Specifically, it presents an empirical study that covers the location, pin arrangement, and interconnect between embedded floating point units (FPUs and the fine-grained logic fabric in FPGAs. It also studies this interface in FPGAs which contain both FPUs and embedded memories. The results show that (1 FPUs should have a square aspect ratio; (2 they should be positioned near the center of the FPGA; (3 their I/O pins should be arranged around all four sides of the FPU; (4 embedded memory should be located between the FPUs; and (5 connecting higher I/O density coarse-grained blocks increases the demand for routing resources. The hybrid FPGAs with embedded memory required 12% wider channels than the case where embedded memory is not used.

  10. Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO2 for non-volatile memory device

    International Nuclear Information System (INIS)

    Stepina, N.P.; Dvurechenskii, A.V.; Armbrister, V.A.; Kirienko, V.V.; Novikov, P.L.; Kesler, V.G.; Gutakovskii, A.K.; Smagina, Z.V.; Spesivtzev, E.V.

    2008-01-01

    A floating gate memory structure, utilizing Ge nanocrystals (NCs) deposited on tunnel SiO 2 , have been fabricated using pulsed low energy ion-beam induced molecular-beam deposition (MBD) in ultra-high vacuum. The ion-beam action is shown to stimulate the nucleation of Ge NCs when being applied after thin Ge layer deposition. Growth conditions for independent change of NCs size and array density were established allowing to optimize the structure parameters required for memory device. Activation energy E = 0.25 eV was determined from the temperature dependence of NCs array density. Monte Carlo simulation has shown that the process, determining NCs array density, is the surface diffusion. Embedding of the crystalline Ge dots into silicon oxide was carried out by selective oxidation of Si(100)/SiO 2 /Ge(NCs)/poly-Si structure. MOS-capacitor obtained after oxidation showed a hysteresis in its C-V curves attributed to charge retention in the Ge dots

  11. Track recognition with an associative pattern memory

    International Nuclear Information System (INIS)

    Bok, H.W. den; Visschers, J.L.; Borgers, A.J.; Lourens, W.

    1991-01-01

    Using Programmable Gate Arrays (PGAs), a prototype for a fast Associative Pattern Memory module has been realized. The associative memory performs the recognition of tracks within the hadron detector data acquisition system at NIKHEF-K. The memory matches the detector state with a set of 24 predefined tracks to identify the particle tracks that occur during an event. This information enables the trigger hardware to classify and select or discriminate the event. Mounted on a standard size (6U) VME board, several PGAs together form an associative memory. The internal logic architecture of the Gate Array is used in such a way as to minimize signal propagation delay. The memory cells, containing a binary representation of the particle tracks, are dynamically loadable through a VME bus interface, providing a high level of flexibility. The hadron detector and its readout system are briefly described and our track representation method is presented. Results from measurements under experimental conditions are discussed. (orig.)

  12. Animal Diet Formulation with Floating Price

    Directory of Open Access Journals (Sweden)

    S.H Nasseri

    2016-12-01

    Full Text Available In the process of milk production, the highest cost relates to animal feed. Based on reports provided by the experts, around seventy percent of dairy livestock costs included feed costs. In order to minimize the total price of livestock feed, according to the limits of feed sources in each region or season, and also the transportation and maintenance costs and ultimately milk price reduction, optimization of the livestock nutrition program is an essential issue. Because of the uncertainty and lack of precision in the optimal food ration done with existing methods based on linear programming, there is a need to use appropriate methods to meet this purpose. Therefore, in this study formulation of completely mixed nutrient diets of dairy cows is done by using a fuzzy linear programming in early lactation. Application of fuzzy optimization method and floating price make it possible to formulate and change the completely mixed diets with adequate safety margins. Therefore, applications of fuzzy methods in feed rations of dairy cattle are recommended to optimize the diets. Obviously, it would be useful to design suitable software, which provides the possibility of using floating prices to set feed rations by the use of fuzzy optimization method.

  13. Water-Pressure Distribution on Seaplane Float

    Science.gov (United States)

    Thompson, F L

    1929-01-01

    The investigation presented in this report was conducted for the purpose of determining the distribution and magnitude of water pressures likely to be experienced on seaplane hulls in service. It consisted of the development and construction of apparatus for recording water pressures lasting one one-hundredth second or longer and of flight tests to determine the water pressures on a UO-1 seaplane float under various conditions of taxiing, taking off, and landing. The apparatus developed was found to operate with satisfactory accuracy and is suitable for flight tests on other seaplanes. The tests on the UO-1 showed that maximum pressures of about 6.5 pounds per square inch occur at the step for the full width of the float bottom. Proceeding forward from the step the maximum pressures decrease in magnitude uniformly toward the bow, and the region of highest pressures narrows toward the keel. Immediately abaft the step the maximum pressures are very small, but increase in magnitude toward the stern and there once reached a value of about 5 pounds per square inch. (author)

  14. Feasibility study on floating nuclear power station

    International Nuclear Information System (INIS)

    Kajima, Ryoichi

    1987-01-01

    It is stipulated that nuclear power plants are to be built on solid rock bases on land in Japan. However, there are a limited number of appropriate siting grounds. The Central Research Institute of Electric Power Industry has engaged since 1981 in the studies on the construction technology of power plants, aiming at establishing new siting technology to expand the possible siting areas for nuclear power plants. Underground siting is regarded as a proven technology due to the experience in underground hydroelectric power plants. The technology of siting on quaternary ground is now at the stage of verification. In this report, the outline of floating type offshore/inshore siting technology is introduced, which is considered to be feasible in view of the technical and economical aspects. Three fixed structure types were selected, of which the foundations are fixed to seabed, plant superstructures are above sea surface, and which are floating type. Aiming at ensuring the aseismatic stability of the plant foundations, the construction technology is studied, and the structural concept omitting buoyancy is possible. The most practical water depth is not more than 20 m. The overall plant design, earthquake isolation effect and breakwater are described. (Kako, I.)

  15. Floating / Travelling Gardens of (Postcolonial Time

    Directory of Open Access Journals (Sweden)

    Carmen Concilio

    2017-11-01

    Full Text Available This essay on travelling gardens of (postcolonial time opens with two iconic images of floating gardens in contemporary postcolonial literature: Will Phantom’s bio-garbage rafter, which saves him in the midst of a cyclone in Carpentaria (2008, by the Aboriginal author Alexis Wright, and Pi’s carnivore island-organism in Life of Pi (2001, which cannot save him from his shipwreck, by Canadian writer Yan Martel. These floating, hybrid gardens of the Anthropocene precede the real travelling gardens of both Michael Ondaatje’s The Cat’s Table (2011 and Amitav Ghosh’s Ibis Trilogy (2008-2015, two authors who both indirectly and directly tell the story of botanical gardens in Asia, and of plant and seed smuggling and transplantation (“displacement” also hinting at their historical and economic colonial implications. For, after all, botanical gardens imply a very specific version of care, Cura (Robert Pogue Harrison 2009, while embodying a precise, imperial scientific and economic project (Brockway 2002; Johnson 2011.

  16. Research and development on university-collaboration type industrial and scientific technologies in fiscal 1999. Achievement report on research and development of the next generation ferroelectric thin film memory (research and development of the next generation ferroelectric memory); 1999 nendo jisedai kyoyudentai memory no kenkyu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    With an objective to realize the next generation ferroelectric memory, research and development has been carried out on quality improvement in ferroelectric thin films. This paper summarizes the achievements in fiscal 1999. In the search and research on new ferroelectric materials, discussions were given on such new materials as Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} in addition to the conventional PLZT and SBT. In the research on film forming processes, the sol-gel method, the organic metal gaseous phase growth method and the sputtering method were used. In improving the quality of buffer layers, research was performed to use as a buffer layer the STA/SiON laminated structure in which silicon substrates were nitrided, and a film of SrTa{sub 2}O{sub 6} (STA) being a high ferroelectric material was formed. As a result of the research, a buffer layer having thin films with thickness of 3.7 to 4.8 nm as converted to SiO{sub 2} was obtained, wherein a leak current smaller than the tunnel current of the SiO{sub 2} film having the same thickness was shown. In the search for materials and research on film forming technologies to develop function separated type memory, such pure metals as Pt, Ir and Ru and their conductive oxides were used to evaluate properties as a floating gate electrode. (NEDO)

  17. Photon-gated spin transistor

    OpenAIRE

    Li, Fan; Song, Cheng; Cui, Bin; Peng, Jingjing; Gu, Youdi; Wang, Guangyue; Pan, Feng

    2017-01-01

    Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It would be fundamentally transformative if optical gating was used for spin-FET. We report a new type of spin-polarized field-effect transistor (spin-FET) with optical gating, which is fabricated by partial exposure of the (La,Sr)MnO3 channel to light-emitti...

  18. 14 CFR 136.11 - Helicopter floats for over water.

    Science.gov (United States)

    2010-01-01

    ... 14 Aeronautics and Space 3 2010-01-01 2010-01-01 false Helicopter floats for over water. 136.11... TOURS AND NATIONAL PARKS AIR TOUR MANAGEMENT National Air Tour Safety Standards § 136.11 Helicopter floats for over water. (a) A helicopter used in commercial air tours over water beyond the shoreline must...

  19. Production of floating pellets using appropriate methods | Suleiman ...

    African Journals Online (AJOL)

    The study investigated into the use of floating materials like candle wax, yeast and baking powder to achieve pellet buoyancy. Ten diets were formulated with incorporation of floating agents; Diet I-YBCT- (yeast-baking powder in cold water -toasted), Diet II-YBCU- (yeast-baking powder in cold water -untoasted) Diet III ...

  20. Design and Evaluation of an Oral Floating Matrix Tablet of ...

    African Journals Online (AJOL)

    Purpose: To develop floating matrix tablets of salbutamol sulphate using ethyl cellulose and acrycoat S-100 as polymers, and sodium bicarbonate, citric acid and tartaric acid as gas generating agents. Methods: Twenty four formulations were prepared and segregated into four major categories, A to D. The floating tablets ...

  1. Response estimation for a floating bridge using acceleration output only

    NARCIS (Netherlands)

    Petersen, Øyvind Wiig; Øiseth, Ole; Nord, Torodd Skjerve; Lourens, E.; Sas, P.; Moens, D.; van de Walle, A.

    2016-01-01

    The Norwegian Public Roads Administration is reviewing the possibility of using floating bridges as fjord crossings. The dynamic behaviour of very long floating bridges with novel designs are prone to uncertainties. Studying the dynamic behaviour of existing bridges is valuable for understanding

  2. Development and evaluation of floating microspheres of curcumin in ...

    African Journals Online (AJOL)

    Purpose: To prepare and evaluate floating microspheres of curcumin for prolonged gastric residence and to study their effect on alloxan-induced diabetic rats. Methods: Floating microsphere were prepared by emulsion-solvent diffusion method, using hydroxylpropyl methylcellulose, chitosan and Eudragit S 100 polymer in ...

  3. Development and Evaluation of Floating Microspheres of Curcumin ...

    African Journals Online (AJOL)

    Purpose: To prepare and evaluate floating microspheres of curcumin for prolonged gastric residence time and increased drug bioavailability. Methods: Floating microsphere were prepared by emulsion solvent diffusion method, using hydroxylpropyl methylcellulose (HPMC), ethyl cellulose (EC), Eudragit S 100 polymer in ...

  4. Herbal carrier-based floating microparticles of diltiazem ...

    African Journals Online (AJOL)

    Purpose: To formulate and characterize a gastroretentive floating drug delivery system for diltiazem hydrochloride using psyllium husk and sodium alginate as natural herbal carriers to improve the therapeutic effect of the drug in cardiac patients. Methods: Floating microparticles containing diltiazem hydrochloride were ...

  5. Floating Solar Photovoltaics Gaining Ground | State, Local, and Tribal

    Science.gov (United States)

    flotovoltaics (a trademarked term) or floating solar, represent an emerging application in which PV panels are , including efficiency gains (due to water cooling the panels), reductions in unwanted algae growth, slower 994 panels floating on 130 foam-filled pontoons atop the winery's irrigation pond and an additional

  6. Reversible logic gates on Physarum Polycephalum

    International Nuclear Information System (INIS)

    Schumann, Andrew

    2015-01-01

    In this paper, we consider possibilities how to implement asynchronous sequential logic gates and quantum-style reversible logic gates on Physarum polycephalum motions. We show that in asynchronous sequential logic gates we can erase information because of uncertainty in the direction of plasmodium propagation. Therefore quantum-style reversible logic gates are more preferable for designing logic circuits on Physarum polycephalum

  7. Demonstration of a Quantum Nondemolition Sum Gate

    DEFF Research Database (Denmark)

    Yoshikawa, J.; Miwa, Y.; Huck, Alexander

    2008-01-01

    The sum gate is the canonical two-mode gate for universal quantum computation based on continuous quantum variables. It represents the natural analogue to a qubit C-NOT gate. In addition, the continuous-variable gate describes a quantum nondemolition (QND) interaction between the quadrature...

  8. A novel grounded to floating admittance converter with electronic control

    Science.gov (United States)

    Prasad, Dinesh; Ahmad, Javed; Srivastava, Mayank

    2018-01-01

    This article suggests a new grounded to floating admittance convertor employing only two voltage differencing transconductance amplifiers (VDTAs). The proposed circuit can convert any arbitrary grounded admittance into floating admittance with electronically controllable scaling factor. The presented converter enjoys the following beneficial: (1) no requirement of any additional passive element (2) scaling factor can be tuned electronically through bias currents of VDTAs (3) no matching constraint required (4) low values of active/passive sensitivity indexes and (5) excellent non ideal behavior that indicates no deviation in circuit behavior even under non ideal environment. Application of the proposed configuration in realization of floating resistor and floating capacitor has been presented and the workability of these floating elements has been confirmed by active filter design examples. SPICE simulations have been performed to demonstrate the performance of the proposed circuits.

  9. Bill Gates vil redde Folkeskolen

    DEFF Research Database (Denmark)

    Fejerskov, Adam Moe

    2014-01-01

    Det amerikanske uddannelsessystem bliver for tiden udsat for hård kritik, ledt an af Microsoft stifteren Bill Gates. Gates har indtil videre brugt 3 mia. kroner på at skabe opbakning til tiltag som præstationslønning af lærere og strømlining af pensum på tværs af alle skoler i landet...

  10. 1T1R Nonvolatile Memory with Al/TiO2/Au and Sol-Gel-Processed Insulator for Barium Zirconate Nickelate Gate in Pentacene Thin Film Transistor

    Directory of Open Access Journals (Sweden)

    Ke-Jing Lee

    2017-12-01

    Full Text Available A one-transistor and one-resistor (1T1R architecture with a resistive random access memory (RRAM cell connected to an organic thin-film transistor (OTFT device is successfully demonstrated to avoid the cross-talk issues of only one RRAM cell. The OTFT device, which uses barium zirconate nickelate (BZN as a dielectric layer, exhibits favorable electrical properties, such as a high field-effect mobility of 2.5 cm2/Vs, low threshold voltage of −2.8 V, and low leakage current of 10−12 A, for a driver in the 1T1R operation scheme. The 1T1R architecture with a TiO2-based RRAM cell connected with a BZN OTFT device indicates a low operation current (10 μA and reliable data retention (over ten years. This favorable performance of the 1T1R device can be attributed to the additional barrier heights introduced by using Ni (II acetylacetone as a substitute for acetylacetone, and the relatively low leakage current of a BZN dielectric layer. The proposed 1T1R device with low leakage current OTFT and excellent uniform resistance distribution of RRAM exhibits a good potential for use in practical low-power electronic applications.

  11. Latest design of gate valves

    Energy Technology Data Exchange (ETDEWEB)

    Kurzhofer, U.; Stolte, J.; Weyand, M.

    1996-12-01

    Babcock Sempell, one of the most important valve manufacturers in Europe, has delivered valves for the nuclear power industry since the beginning of the peaceful application of nuclear power in the 1960s. The latest innovation by Babcock Sempell is a gate valve that meets all recent technical requirements of the nuclear power technology. At the moment in the United States, Germany, Sweden, and many other countries, motor-operated gate and globe valves are judged very critically. Besides the absolute control of the so-called {open_quotes}trip failure,{close_quotes} the integrity of all valve parts submitted to operational forces must be maintained. In case of failure of the limit and torque switches, all valve designs have been tested with respect to the quality of guidance of the gate. The guidances (i.e., guides) shall avoid a tilting of the gate during the closing procedure. The gate valve newly designed by Babcock Sempell fulfills all these characteristic criteria. In addition, the valve has cobalt-free seat hardfacing, the suitability of which has been proven by friction tests as well as full-scale blowdown tests at the GAP of Siemens in Karlstein, West Germany. Babcock Sempell was to deliver more than 30 gate valves of this type for 5 Swedish nuclear power stations by autumn 1995. In the presentation, the author will report on the testing performed, qualifications, and sizing criteria which led to the new technical design.

  12. Memory architecture

    NARCIS (Netherlands)

    2012-01-01

    A memory architecture is presented. The memory architecture comprises a first memory and a second memory. The first memory has at least a bank with a first width addressable by a single address. The second memory has a plurality of banks of a second width, said banks being addressable by components

  13. Analysis of Switched-Rigid Floating Oscillator

    Directory of Open Access Journals (Sweden)

    Prabhakar R. Marur

    2009-01-01

    Full Text Available In explicit finite element simulations, a technique called deformable-to-rigid (D2R switching is used routinely to reduce the computation time. Using the D2R option, the deformable parts in the model can be switched to rigid and reverted back to deformable when needed during the analysis. The time of activation of D2R however influences the overall dynamics of the system being analyzed. In this paper, a theoretical basis for the selection of time of rigid switching based on system energy is established. A floating oscillator problem is investigated for this purpose and closed-form analytical expressions are derived for different phases in rigid switching. The analytical expressions are validated by comparing the theoretical results with numerical computations.

  14. Preliminary results from NOAMP deep drifting floats

    International Nuclear Information System (INIS)

    Ollitrault, M.

    1989-01-01

    This paper is a very brief and preliminary outline of first results obtained with deep SOFAR floats in the NOAMP area. The work is now going toward more precise statistical estimations of mean and variable currents, together with better tracking to resolve submesoscales and estimate diffusivities due to mesoscale and smaller scale motions. However the preliminary results confirm that the NOAMP region (and surroundings) has a deep mesoscale eddy field that is considerably more energetic that the mean field (r.m.s. velocities are of order 5 cm s -1 ), although both values are diminished compared to the western basin. A data report containing trajectories and statistics is scheduled to be published by IFREMER in the near future. The project main task is to especially study the dispersion of radioactive substances

  15. Nuclear Security for Floating Nuclear Power Plants

    Energy Technology Data Exchange (ETDEWEB)

    Skiba, James M. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Scherer, Carolynn P. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2015-10-13

    Recently there has been a lot of interest in small modular reactors. A specific type of these small modular reactors (SMR,) are marine based power plants called floating nuclear power plants (FNPP). These FNPPs are typically built by countries with extensive knowledge of nuclear energy, such as Russia, France, China and the US. These FNPPs are built in one country and then sent to countries in need of power and/or seawater desalination. Fifteen countries have expressed interest in acquiring such power stations. Some designs for such power stations are briefly summarized. Several different avenues for cooperation in FNPP technology are proposed, including IAEA nuclear security (i.e. safeguards), multilateral or bilateral agreements, and working with Russian design that incorporates nuclear safeguards for IAEA inspections in non-nuclear weapons states

  16. Sharing risk and reward - floating production contractorship

    International Nuclear Information System (INIS)

    Gisvold, K.M.

    1994-01-01

    The conference paper summarizes the contractual experience so far gained on Petrojarl 1 floating production system and the associated shuttling services on the Norwegian continental shelf. The paper attempts to draw some lines into the future with respect to development of the business format and the evolution of the relationship between the contractor and the various oil companies in question. Turnkey production services as well as transport and project services to the oil industry are provided. The scope of these services ranges from top of the sea bed wellhead to quayside at the refinery, and is based on ownership control of the employed vessels as well as complete manning of all services. 7 figs

  17. Field programmable gate array-assigned complex-valued computation and its limits

    Energy Technology Data Exchange (ETDEWEB)

    Bernard-Schwarz, Maria, E-mail: maria.bernardschwarz@ni.com [National Instruments, Ganghoferstrasse 70b, 80339 Munich (Germany); Institute of Applied Physics, TU Wien, Wiedner Hauptstrasse 8, 1040 Wien (Austria); Zwick, Wolfgang; Klier, Jochen [National Instruments, Ganghoferstrasse 70b, 80339 Munich (Germany); Wenzel, Lothar [National Instruments, 11500 N MOPac Expy, Austin, Texas 78759 (United States); Gröschl, Martin [Institute of Applied Physics, TU Wien, Wiedner Hauptstrasse 8, 1040 Wien (Austria)

    2014-09-15

    We discuss how leveraging Field Programmable Gate Array (FPGA) technology as part of a high performance computing platform reduces latency to meet the demanding real time constraints of a quantum optics simulation. Implementations of complex-valued operations using fixed point numeric on a Virtex-5 FPGA compare favorably to more conventional solutions on a central processing unit. Our investigation explores the performance of multiple fixed point options along with a traditional 64 bits floating point version. With this information, the lowest execution times can be estimated. Relative error is examined to ensure simulation accuracy is maintained.

  18. Present situation of floating nuclear power plants

    Energy Technology Data Exchange (ETDEWEB)

    Sakurai, A [Central Research Inst. of Electric Power industry, Tokyo (Japan)

    1975-08-01

    The present situation of investigation and the future problems of floating nuclear power plants in Japan are examined, referring to those in USA. The committee report on a new power generation system in 1970 is quoted. In this report, the site conditions are supposed to be 5 km offshore, 100m water depth, 60 m/sec wind velocity, 10 m wave height, 200 m wave length, 12 seconds wave period 0.2 g earthquake acceleration, and 2.5 knots tide current. The semisubmersible hull of double construction 15 m under water is employed. A pair of 1,000,000 kW BWR reactors are utilized. A sea water desalting unit using bleed steam from turbines is installed. The solid radioactive wastes packed in drums are disposed in the sea. The design and cost estimation were made. The names of the organizations who have made investigation in this field, namely the Civil Engineering Society, the Sience and Technology Agency and other several centers, are reported. The Chubu Electric Power Company is forwarding its project. Referring to the investigations in USA, the project of Atlantic nuclear power station unit is described. A report of plant design has been submitted by O.P.S. to United States Atomic Energy Commission in 1973. The Coastal Area Facilities Act was instituted in New Jersey in 1973. Although the Atlantic nuclear power station has been postponed, it is the most feasible project. For the realization of a floating nuclear power plant in Japan, investigation must be started on the ground construction that can endure the construction of breakwater in water depth of 14 to 30 meter.

  19. Potential of water surface-floating microalgae for biodiesel production: Floating-biomass and lipid productivities.

    Science.gov (United States)

    Muto, Masaki; Nojima, Daisuke; Yue, Liang; Kanehara, Hideyuki; Naruse, Hideaki; Ujiro, Asuka; Yoshino, Tomoko; Matsunaga, Tadashi; Tanaka, Tsuyoshi

    2017-03-01

    Microalgae have been accepted as a promising feedstock for biodiesel production owing to their capability of converting solar energy into lipids through photosynthesis. However, the high capital and operating costs, and high energy consumption, are hampering commercialization of microalgal biodiesel. In this study, the surface-floating microalga, strain AVFF007 (tentatively identified as Botryosphaerella sudetica), which naturally forms a biofilm on surfaces, was characterized for use in biodiesel production. The biofilm could be conveniently harvested from the surface of the water by adsorbing onto a polyethylene film. The lipid productivity of strain AVFF007 was 46.3 mg/L/day, allowing direct comparison to lipid productivities of other microalgal species. The moisture content of the surface-floating biomass was 86.0 ± 1.2%, which was much lower than that of the biomass harvested using centrifugation. These results reveal the potential of this surface-floating microalgal species as a biodiesel producer, employing a novel biomass harvesting and dewatering strategy. Copyright © 2016 The Society for Biotechnology, Japan. Published by Elsevier B.V. All rights reserved.

  20. Empirical study of the metal-nitride-oxide-semiconductor device characteristics deduced from a microscopic model of memory traps

    International Nuclear Information System (INIS)

    Ngai, K.L.; Hsia, Y.

    1982-01-01

    A graded-nitride gate dielectric metal-nitride-oxide-semiconductor (MNOS) memory transistor exhibiting superior device characteristics is presented and analyzed based on a qualitative microscopic model of the memory traps. The model is further reviewed to interpret some generic properties of the MNOS memory transistors including memory window, erase-write speed, and the retention-endurance characteristic features

  1. WindWaveFloat (WWF): Final Scientific Report

    Energy Technology Data Exchange (ETDEWEB)

    Weinstein, Alla; Roddier, Dominique; Banister, Kevin

    2012-03-30

    Principle Power Inc. and National Renewable Energy Lab (NREL) have completed a contract to assess the technical and economic feasibility of integrating wave energy converters into the WindFloat, resulting in a new concept called the WindWaveFloat (WWF). The concentration of several devices on one platform could offer a potential for both economic and operational advantages. Wind and wave energy converters can share the electrical cable and power transfer equipment to transport the electricity to shore. Access to multiple generation devices could be simplified, resulting in cost saving at the operational level. Overall capital costs may also be reduced, provided that the design of the foundation can be adapted to multiple devices with minimum modifications. Finally, the WindWaveFloat confers the ability to increase energy production from individual floating support structures, potentially leading to a reduction in levelized energy costs, an increase in the overall capacity factor, and greater stability of the electrical power delivered to the grid. The research conducted under this grant investigated the integration of several wave energy device types into the WindFloat platform. Several of the resulting system designs demonstrated technical feasibility, but the size and design constraints of the wave energy converters (technical and economic) make the WindWaveFloat concept economically unfeasible at this time. Not enough additional generation could be produced to make the additional expense associated with wave energy conversion integration into the WindFloat worthwhile.

  2. Floating arterial thrombus related stroke treated by intravenous thrombolysis.

    Science.gov (United States)

    Vanacker, P; Cordier, M; Janbieh, J; Federau, C; Michel, P

    2014-01-01

    The effects of intravenous thrombolysis on floating thrombi in cervical and intracranial arteries of acute ischemic stroke patients are unknown. Similarly, the best prevention methods of early recurrences remain controversial. This study aimed to describe the clinical and radiological outcome of thrombolyzed strokes with floating thrombi. We retrospectively analyzed all thrombolyzed stroke patients in our institution between 2003 and 2010 with floating thrombi on acute CT-angiography before the intravenous thrombolysis. The floating thrombus was diagnosed if an elongated thrombus of at least 5 mm length, completely surrounded by contrast on supra-aortic neck or intracerebral arteries, was present on CT-angiography. Demographics, vascular risk factors, and comorbidities were recorded and stroke etiology was determined after a standardized workup. Repeat arterial imaging was performed by CTA at 24 h or before if clinical worsening was noted and then by Doppler and MRA during the first week and at four months. Of 409 thrombolyzed stroke patients undergoing acute CT Angiography, seven (1.7%) had a floating thrombus; of these seven, six had it in the anterior circulation. Demographics, risk factors and stroke severity of these patients were comparable to the other thrombolyzed patients. After intravenous thrombolysis, the floating thrombi resolved completely at 24 h in four of the patients, whereas one had an early recurrent stroke and one developed progressive worsening. One patient developed early occlusion of the carotid artery with floating thrombus and subsequently a TIA. The two patients with a stable floating thrombus had no clinical recurrences. In the literature, only one of four reported cases were found to have a thrombolysis-related early recurrence. Long-term outcome seemed similar in thrombolyzed patients with floating thrombus, despite a possible increase of very early recurrence. It remains to be established whether acute mechanical thrombectomy could be

  3. Fast quantum logic gates with trapped-ion qubits

    Science.gov (United States)

    Schäfer, V. M.; Ballance, C. J.; Thirumalai, K.; Stephenson, L. J.; Ballance, T. G.; Steane, A. M.; Lucas, D. M.

    2018-03-01

    Quantum bits (qubits) based on individual trapped atomic ions are a promising technology for building a quantum computer. The elementary operations necessary to do so have been achieved with the required precision for some error-correction schemes. However, the essential two-qubit logic gate that is used to generate quantum entanglement has hitherto always been performed in an adiabatic regime (in which the gate is slow compared with the characteristic motional frequencies of the ions in the trap), resulting in logic speeds of the order of 10 kilohertz. There have been numerous proposals of methods for performing gates faster than this natural ‘speed limit’ of the trap. Here we implement one such method, which uses amplitude-shaped laser pulses to drive the motion of the ions along trajectories designed so that the gate operation is insensitive to the optical phase of the pulses. This enables fast (megahertz-rate) quantum logic that is robust to fluctuations in the optical phase, which would otherwise be an important source of experimental error. We demonstrate entanglement generation for gate times as short as 480 nanoseconds—less than a single oscillation period of an ion in the trap and eight orders of magnitude shorter than the memory coherence time measured in similar calcium-43 hyperfine qubits. The power of the method is most evident at intermediate timescales, at which it yields a gate error more than ten times lower than can be attained using conventional techniques; for example, we achieve a 1.6-microsecond-duration gate with a fidelity of 99.8 per cent. Faster and higher-fidelity gates are possible at the cost of greater laser intensity. The method requires only a single amplitude-shaped pulse and one pair of beams derived from a continuous-wave laser. It offers the prospect of combining the unrivalled coherence properties, operation fidelities and optical connectivity of trapped-ion qubits with the submicrosecond logic speeds that are usually

  4. Float level switch for a nuclear power plant containment vessel

    International Nuclear Information System (INIS)

    Powell, J.G.

    1993-01-01

    This invention is a float level switch used to sense rise or drop in water level in a containment vessel of a nuclear power plant during a loss of coolant accident. The essential components of the device are a guide tube, a reed switch inside the guide tube, a float containing a magnetic portion that activates a reed switch, and metal-sheathed, ceramic-insulated conductors connecting the reed switch to a monitoring system outside the containment vessel. Special materials and special sealing techniques prevent failure of components and allow the float level switch to be connected to a monitoring system outside the containment vessel. 1 figures

  5. Float level switch for a nuclear power plant containment vessel

    Science.gov (United States)

    Powell, James G.

    1993-01-01

    This invention is a float level switch used to sense rise or drop in water level in a containment vessel of a nuclear power plant during a loss of coolant accident. The essential components of the device are a guide tube, a reed switch inside the guide tube, a float containing a magnetic portion that activates a reed switch, and metal-sheathed, ceramic-insulated conductors connecting the reed switch to a monitoring system outside the containment vessel. Special materials and special sealing techniques prevent failure of components and allow the float level switch to be connected to a monitoring system outside the containment vessel.

  6. Floating cultivation of marine cyanobacteria using coal fly ash

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, M.; Yoshida, E.; Takeyama, H.; Matsunaga, T. [Tokyo University of Agriculture and Technology, Tokyo (Japan). Dept. of Biotetechnology

    2000-07-01

    The aim was to develop improved methodologies for bulk culturing of biotechnologically useful marine cyanobacteria in the open ocean. The viability of using coal fly ash (CFA) blocks as the support medium in a novel floating culture system for marine microalgae was investigated. The marine cyanobacterium Synechococcus sp. NKBC 040607 was found to adhere to floating CFA blocks in liquid culture medium. The marine cyanobacterium Synechococcus sp. NKBG 042902 weakly adhered to floating CFA blocks in BG-11 medium. Increasing the concentration of calcium ion in the culture medium enhanced adherence to CFA blocks.

  7. Controlling the layer localization of gapless states in bilayer graphene with a gate voltage

    Science.gov (United States)

    Jaskólski, W.; Pelc, M.; Bryant, Garnett W.; Chico, Leonor; Ayuela, A.

    2018-04-01

    Experiments in gated bilayer graphene with stacking domain walls present topological gapless states protected by no-valley mixing. Here we research these states under gate voltages using atomistic models, which allow us to elucidate their origin. We find that the gate potential controls the layer localization of the two states, which switches non-trivially between layers depending on the applied gate voltage magnitude. We also show how these bilayer gapless states arise from bands of single-layer graphene by analyzing the formation of carbon bonds between layers. Based on this analysis we provide a model Hamiltonian with analytical solutions, which explains the layer localization as a function of the ratio between the applied potential and interlayer hopping. Our results open a route for the manipulation of gapless states in electronic devices, analogous to the proposed writing and reading memories in topological insulators.

  8. New opening hours of the gates

    CERN Multimedia

    GS Department

    2009-01-01

    Please note the new opening hours of the gates as well as the intersites tunnel from the 19 May 2009: GATE A 7h - 19h GATE B 24h/24 GATE C 7h - 9h\t17h - 19h GATE D 8h - 12h\t13h - 16h GATE E 7h - 9h\t17h - 19h Prévessin 24h/24 The intersites tunnel will be opened from 7h30 to 18h non stop. GS-SEM Group Infrastructure and General Services Department

  9. Study of the tunnelling initiated leakage current through the carbon nanotube embedded gate oxide in metal oxide semiconductor structures

    International Nuclear Information System (INIS)

    Chakraborty, Gargi; Sarkar, C K; Lu, X B; Dai, J Y

    2008-01-01

    The tunnelling currents through the gate dielectric partly embedded with semiconducting single-wall carbon nanotubes in a silicon metal-oxide-semiconductor (MOS) structure have been investigated. The application of the gate voltage to such an MOS device results in the band bending at the interface of the partly embedded oxide dielectric and the surface of the silicon, initiating tunnelling through the gate oxide responsible for the gate leakage current whenever the thickness of the oxide is scaled. A model for silicon MOS structures, where carbon nanotubes are confined in a narrow layer embedded in the gate dielectric, is proposed to investigate the direct and the Fowler-Nordheim (FN) tunnelling currents of such systems. The idea of embedding such elements in the gate oxide is to assess the possibility for charge storage for memory device applications. Comparing the FN tunnelling onset voltage between the pure gate oxide and the gate oxide embedded with carbon nanotubes, it is found that the onset voltage decreases with the introduction of the nanotubes. The direct tunnelling current has also been studied at very low gate bias, for the thin oxide MOS structure which plays an important role in scaling down the MOS transistors. The FN tunnelling current has also been studied with varying nanotube diameter

  10. Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO{sub 2} for non-volatile memory device

    Energy Technology Data Exchange (ETDEWEB)

    Stepina, N.P. [Institute of Semiconductor Physics, Lavrenteva 13, 630090 Novosibirsk (Russian Federation)], E-mail: nstepina@mail.ru; Dvurechenskii, A.V.; Armbrister, V.A.; Kirienko, V.V.; Novikov, P.L.; Kesler, V.G.; Gutakovskii, A.K.; Smagina, Z.V.; Spesivtzev, E.V. [Institute of Semiconductor Physics, Lavrenteva 13, 630090 Novosibirsk (Russian Federation)

    2008-11-03

    A floating gate memory structure, utilizing Ge nanocrystals (NCs) deposited on tunnel SiO{sub 2}, have been fabricated using pulsed low energy ion-beam induced molecular-beam deposition (MBD) in ultra-high vacuum. The ion-beam action is shown to stimulate the nucleation of Ge NCs when being applied after thin Ge layer deposition. Growth conditions for independent change of NCs size and array density were established allowing to optimize the structure parameters required for memory device. Activation energy E = 0.25 eV was determined from the temperature dependence of NCs array density. Monte Carlo simulation has shown that the process, determining NCs array density, is the surface diffusion. Embedding of the crystalline Ge dots into silicon oxide was carried out by selective oxidation of Si(100)/SiO{sub 2} /Ge(NCs)/poly-Si structure. MOS-capacitor obtained after oxidation showed a hysteresis in its C-V curves attributed to charge retention in the Ge dots.

  11. Core-Shell Zn x Cd1- x Se/Zn y Cd1- y Se Quantum Dots for Nonvolatile Memory and Electroluminescent Device Applications

    Science.gov (United States)

    Al-Amoody, Fuad; Suarez, Ernesto; Rodriguez, Angel; Heller, E.; Huang, Wenli; Jain, F.

    2011-08-01

    This paper presents a floating quantum dot (QD) gate nonvolatile memory device using high-energy-gap Zn y Cd1- y Se-cladded Zn x Cd1- x Se quantum dots ( y > x) with tunneling layers comprising nearly lattice-matched semiconductors (e.g., ZnS/ZnMgS) on Si channels. Also presented is the fabrication of an electroluminescent (EL) device with embedded cladded ZnCdSe quantum dots. These ZnCdSe quantum dots were embedded between indium tin oxide (ITO) on glass and a top Schottky metal electrode deposited on a thin CsF barrier. These QDs, which were nucleated in a photo-assisted microwave plasma (PMP) metalorganic chemical vapor deposition (MOCVD) reactor, were grown between the source and drain regions on a p-type silicon substrate of the nonvolatile memory device. The composition of QD cladding, which relates to the value of y in Zn y Cd1- y Se, was engineered by the intensity of ultraviolet light, which controlled the incorporation of zinc in ZnCdSe. The QD quality is comparable to those deposited by other methods. Characteristics and modeling of the II-VI quantum dots as well as two diverse types of devices are presented in this paper.

  12. Respiratory gating in cardiac PET

    DEFF Research Database (Denmark)

    Lassen, Martin Lyngby; Rasmussen, Thomas; Christensen, Thomas E

    2017-01-01

    BACKGROUND: Respiratory motion due to breathing during cardiac positron emission tomography (PET) results in spatial blurring and erroneous tracer quantification. Respiratory gating might represent a solution by dividing the PET coincidence dataset into smaller respiratory phase subsets. The aim...... of our study was to compare the resulting imaging quality by the use of a time-based respiratory gating system in two groups administered either adenosine or dipyridamole as the pharmacological stress agent. METHODS AND RESULTS: Forty-eight patients were randomized to adenosine or dipyridamole cardiac...... stress (82)RB-PET. Respiratory rates and depths were measured by a respiratory gating system in addition to registering actual respiratory rates. Patients undergoing adenosine stress showed a decrease in measured respiratory rate from initial to later scan phase measurements [12.4 (±5.7) vs 5.6 (±4...

  13. Robustness of holonomic quantum gates

    International Nuclear Information System (INIS)

    Solinas, P.; Zanardi, P.; Zanghi, N.

    2005-01-01

    Full text: If the driving field fluctuates during the quantum evolution this produces errors in the applied operator. The holonomic (and geometrical) quantum gates are believed to be robust against some kind of noise. Because of the geometrical dependence of the holonomic operators can be robust against this kind of noise; in fact if the fluctuations are fast enough they cancel out leaving the final operator unchanged. I present the numerical studies of holonomic quantum gates subject to this parametric noise, the fidelity of the noise and ideal evolution is calculated for different noise correlation times. The holonomic quantum gates seem robust not only for fast fluctuating fields but also for slow fluctuating fields. These results can be explained as due to the geometrical feature of the holonomic operator: for fast fluctuating fields the fluctuations are canceled out, for slow fluctuating fields the fluctuations do not perturb the loop in the parameter space. (author)

  14. A Method for Modeling of Floating Vertical Axis Wind Turbine

    DEFF Research Database (Denmark)

    Wang, Kai; Hansen, Martin Otto Laver; Moan, Torgeir

    2013-01-01

    It is of interest to investigate the potential advantages of floating vertical axis wind turbine (FVAWT) due to its economical installation and maintenance. A novel 5MW vertical axis wind turbine concept with a Darrieus rotor mounted on a semi-submersible support structure is proposed in this paper....... In order to assess the technical and economic feasibility of this novel concept, a comprehensive simulation tool for modeling of the floating vertical axis wind turbine is needed. This work presents the development of a coupled method for modeling of the dynamics of a floating vertical axis wind turbine....... This integrated dynamic model takes into account the wind inflow, aerodynamics, hydrodynamics, structural dynamics (wind turbine, floating platform and the mooring lines) and a generator control. This approach calculates dynamic equilibrium at each time step and takes account of the interaction between the rotor...

  15. Can Heavier Liquid Float on Top of a Lighter One?

    International Nuclear Information System (INIS)

    Ayyad, A. H.; Takrori, F.

    2011-01-01

    We report on a first observation of a floating spherical Hg (density 13 g/cm 3 ) drop on top of a glycerin (density 1.26 g/cm 3 ) drop, the latter is hemispherical and about four times larger in volume. This observation is clearly against nature's gravity law and has never been reported before. Here we present spectacular high resolution photos that clearly demonstrate this remarkable floating phenomenon. Using milli-Q water, the Hg drop would stay down adhered at the triple line. Instead, the coincidental use of tap water displays the same phenomenon. Increasing the volume of the supporting liquid to a certain value causes the Hg drop to sink. A 5-M NaCl aqueous solution is found enough to show the same floating phenomenon. This floating mercury as a phenomenon is puzzling. On this length scale it seems that surface tension and curvature dominate over gravity. (fundamental areas of phenomenology (including applications))

  16. Wave transmission prediction of multilayer floating breakwater using neural network

    Digital Repository Service at National Institute of Oceanography (India)

    Mandal, S.; Patil, S.G.; Hegde, A.V.

    In the present study, an artificial neural network method has been applied for wave transmission prediction of multilayer floating breakwater. Two neural network models are constructed based on the parameters which influence the wave transmission...

  17. Multifractal analysis of managed and independent float exchange rates

    Science.gov (United States)

    Stošić, Darko; Stošić, Dusan; Stošić, Tatijana; Stanley, H. Eugene

    2015-06-01

    We investigate multifractal properties of daily price changes in currency rates using the multifractal detrended fluctuation analysis (MF-DFA). We analyze managed and independent floating currency rates in eight countries, and determine the changes in multifractal spectrum when transitioning between the two regimes. We find that after the transition from managed to independent float regime the changes in multifractal spectrum (position of maximum and width) indicate an increase in market efficiency. The observed changes are more pronounced for developed countries that have a well established trading market. After shuffling the series, we find that the multifractality is due to both probability density function and long term correlations for managed float regime, while for independent float regime multifractality is in most cases caused by broad probability density function.

  18. High voltage switches having one or more floating conductor layers

    Science.gov (United States)

    Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

    2015-11-24

    This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of one or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.

  19. WindFloat Pacific Project, Final Scientific and Technical Report

    Energy Technology Data Exchange (ETDEWEB)

    Banister, Kevin [Principle Power, Inc., Emeryville, CA (United States)

    2017-01-17

    PPI’s WindFloat Pacific project (WFP) was an up to 30 MW floating offshore wind demonstration project proposed off the Coast of Oregon. The project was to be sited approximately 18 miles due west of Coos Bay, in over 1000 ft. of water, and is the first floating offshore wind array proposed in the United States, and the first offshore wind project of any kind proposed off the West Coast. PPI’s WindFloat, a semi-submersible foundation designed for high-capacity (6MW+) offshore wind turbines, is at the heart of the proposed project, and enables access to the world class wind resource at the project site and, equally, to other deep water, high wind resource areas around the country.

  20. Review of radiological problems of floating nuclear power plants

    International Nuclear Information System (INIS)

    Rodd, T.

    1982-01-01

    Radiological problems associated with floating nuclear power plants under both normal operation and accident conditions are discussed. In the latter case, aspects of both the airborne and liquid pathways are reviewed

  1. Multi-span Suspension Bridge with Floating Towers

    OpenAIRE

    Brunstad, Orjan

    2013-01-01

    The Norwegian Public Roads Administration (NPRA) is currently conducting a feasible study of crossing 8 fjords on the west coast of Norway. The most challenging crossing is the 3700 m wide Sognefjord. Three main concepts are under development, and one of the concepts of this crossing is a three span suspension bridge on floating towers. The floating foundation suggested is a multi-column pontoon with mooring lines to seabed. The object of this thesis was to study this bridge concept with resp...

  2. Sustainability and the future of managed floating in China

    OpenAIRE

    Švarc, Jiří

    2009-01-01

    The purpose of this thesis is to study the Balance of Payments and the Exchange Rate of the People's Republic of China, and it aims to assess whether the current performance of their Managed Floating Exchange Rate is sustainable in the future (given the equilibrium of China's Balance of Payments) and examine what effect would a Free Floating Renminbi Exchange Rate have on the Chinese economy. The work uses the method of compilation - gathering and organizing information on the development of ...

  3. Architectures for a quantum random access memory

    Science.gov (United States)

    Giovannetti, Vittorio; Lloyd, Seth; Maccone, Lorenzo

    2008-11-01

    A random access memory, or RAM, is a device that, when interrogated, returns the content of a memory location in a memory array. A quantum RAM, or qRAM, allows one to access superpositions of memory sites, which may contain either quantum or classical information. RAMs and qRAMs with n -bit addresses can access 2n memory sites. Any design for a RAM or qRAM then requires O(2n) two-bit logic gates. At first sight this requirement might seem to make large scale quantum versions of such devices impractical, due to the difficulty of constructing and operating coherent devices with large numbers of quantum logic gates. Here we analyze two different RAM architectures (the conventional fanout and the “bucket brigade”) and propose some proof-of-principle implementations, which show that, in principle, only O(n) two-qubit physical interactions need take place during each qRAM call. That is, although a qRAM needs O(2n) quantum logic gates, only O(n) need to be activated during a memory call. The resulting decrease in resources could give rise to the construction of large qRAMs that could operate without the need for extensive quantum error correction.

  4. Entropie analysis of floating car data systems

    Directory of Open Access Journals (Sweden)

    F. Gössel

    2004-01-01

    Full Text Available The knowledge of the actual traffic state is a basic prerequisite of modern traffic telematic systems. Floating Car Data (FCD systems are becoming more and more important for the provision of actual and reliable traffic data. In these systems the vehicle velocity is the original variable for the evaluation of the current traffic condition. As real FCDsystems are operating under conditions of limited transmission and processing capacity the analysis of the original variable vehicle speed is of special interest. Entropy considerations are especially useful for the deduction of fundamental restrictions and limitations. The paper analyses velocity-time profiles by means of information entropy. It emphasises in quantification of the information content of velocity-time profiles and the discussion of entropy dynamic in velocity-time profiles. Investigations are based on empirical data derived during field trials. The analysis of entropy dynamic is carried out in two different ways. On one hand velocity differences within a certain interval of time are used, on the other hand the transinformation between velocities in certain time distances was evaluated. One important result is an optimal sample-rate for the detection of velocity data in FCD-systems. The influence of spatial segmentation and of different states of traffic was discussed.

  5. Enhancing Water Evaporation with Floating Synthetic Leaves

    Science.gov (United States)

    Boreyko, Jonathan; Vieitez, Joshua; Berrier, Austin; Roseveare, Matthew; Shi, Weiwei

    2017-11-01

    When a wetted nanoporous medium is exposed to a subsaturated ambient environment, the water menisci assume a concave curvature to achieve a negative pressure. This negative water pressure is required to balance the mismatch in water activity across the water-air interface to achieve local equilibrium. Here, we show that the diffusive evaporation rate of water can be greatly modulated by floating a nanoporous synthetic leaf at the water's free interface. For high ambient humidities, adding the leaf serves to enhance the evaporation rate, presumably by virtue of the menisci enhancing the effective liquid-vapor surface area. For low humidities, the menisci cannot achieve a local equilibrium and retreat partway into the leaf, which increases the local humidity directly above the menisci. In light of these two effects, we find the surprising result that leaves exposed to an ambient humidity of 90 percent can evaporate water at the same rate as leaves exposed to only 50 percent humidity. These findings have implications for using synthetic trees to enhance steam generation or water harvesting. This work was supported by the National Science Foundation (CBET-1653631).

  6. Pc-Based Floating Point Imaging Workstation

    Science.gov (United States)

    Guzak, Chris J.; Pier, Richard M.; Chinn, Patty; Kim, Yongmin

    1989-07-01

    The medical, military, scientific and industrial communities have come to rely on imaging and computer graphics for solutions to many types of problems. Systems based on imaging technology are used to acquire and process images, and analyze and extract data from images that would otherwise be of little use. Images can be transformed and enhanced to reveal detail and meaning that would go undetected without imaging techniques. The success of imaging has increased the demand for faster and less expensive imaging systems and as these systems become available, more and more applications are discovered and more demands are made. From the designer's perspective the challenge to meet these demands forces him to attack the problem of imaging from a different perspective. The computing demands of imaging algorithms must be balanced against the desire for affordability and flexibility. Systems must be flexible and easy to use, ready for current applications but at the same time anticipating new, unthought of uses. Here at the University of Washington Image Processing Systems Lab (IPSL) we are focusing our attention on imaging and graphics systems that implement imaging algorithms for use in an interactive environment. We have developed a PC-based imaging workstation with the goal to provide powerful and flexible, floating point processing capabilities, along with graphics functions in an affordable package suitable for diverse environments and many applications.

  7. MEMORY MODULATION

    Science.gov (United States)

    Roozendaal, Benno; McGaugh, James L.

    2011-01-01

    Our memories are not all created equally strong: Some experiences are well remembered while others are remembered poorly, if at all. Research on memory modulation investigates the neurobiological processes and systems that contribute to such differences in the strength of our memories. Extensive evidence from both animal and human research indicates that emotionally significant experiences activate hormonal and brain systems that regulate the consolidation of newly acquired memories. These effects are integrated through noradrenergic activation of the basolateral amygdala which regulates memory consolidation via interactions with many other brain regions involved in consolidating memories of recent experiences. Modulatory systems not only influence neurobiological processes underlying the consolidation of new information, but also affect other mnemonic processes, including memory extinction, memory recall and working memory. In contrast to their enhancing effects on consolidation, adrenal stress hormones impair memory retrieval and working memory. Such effects, as with memory consolidation, require noradrenergic activation of the basolateral amygdala and interactions with other brain regions. PMID:22122145

  8. Memory Matters

    Science.gov (United States)

    ... Staying Safe Videos for Educators Search English Español Memory Matters KidsHealth / For Kids / Memory Matters What's in ... of your complex and multitalented brain. What Is Memory? When an event happens, when you learn something, ...

  9. Dynamic gating window for compensation of baseline shift in respiratory-gated radiation therapy

    International Nuclear Information System (INIS)

    Pepin, Eric W.; Wu Huanmei; Shirato, Hiroki

    2011-01-01

    Purpose: To analyze and evaluate the necessity and use of dynamic gating techniques for compensation of baseline shift during respiratory-gated radiation therapy of lung tumors. Methods: Motion tracking data from 30 lung tumors over 592 treatment fractions were analyzed for baseline shift. The finite state model (FSM) was used to identify the end-of-exhale (EOE) breathing phase throughout each treatment fraction. Using duty cycle as an evaluation metric, several methods of end-of-exhale dynamic gating were compared: An a posteriori ideal gating window, a predictive trend-line-based gating window, and a predictive weighted point-based gating window. These methods were evaluated for each of several gating window types: Superior/inferior (SI) gating, anterior/posterior beam, lateral beam, and 3D gating. Results: In the absence of dynamic gating techniques, SI gating gave a 39.6% duty cycle. The ideal SI gating window yielded a 41.5% duty cycle. The weight-based method of dynamic SI gating yielded a duty cycle of 36.2%. The trend-line-based method yielded a duty cycle of 34.0%. Conclusions: Dynamic gating was not broadly beneficial due to a breakdown of the FSM's ability to identify the EOE phase. When the EOE phase was well defined, dynamic gating showed an improvement over static-window gating.

  10. Extreme Value Predictions for Wave- and Wind-induced Loads on Floating Offshore Wind Turbines using FORM

    DEFF Research Database (Denmark)

    Joensen, Sunvard; Jensen, Jørgen Juncher; Mansour, Alaa E.

    2007-01-01

    duration of the time domain simulations needed (typically 60-300s to cover the hy-drodynamic memory effects in the response) the calcu-lation of the mean out-crossing rates of a given response are very fast. Thus complicated non-linear effects can be included. The FORM analysis also identifies the most...... probable wave episodes leading to given re-sponses. As an example the motions of floating foundations for offshore wind turbines are analysed taking into consid-eration both the wave and wind induced loads and con-sidering different mooring systems. The possible large horizontal motions make it important...

  11. Quantifying the Impact of Single Bit Flips on Floating Point Arithmetic

    Energy Technology Data Exchange (ETDEWEB)

    Elliott, James J [ORNL; Mueller, Frank [North Carolina State University; Stoyanov, Miroslav K [ORNL; Webster, Clayton G [ORNL

    2013-08-01

    In high-end computing, the collective surface area, smaller fabrication sizes, and increasing density of components have led to an increase in the number of observed bit flips. If mechanisms are not in place to detect them, such flips produce silent errors, i.e. the code returns a result that deviates from the desired solution by more than the allowed tolerance and the discrepancy cannot be distinguished from the standard numerical error associated with the algorithm. These phenomena are believed to occur more frequently in DRAM, but logic gates, arithmetic units, and other circuits are also susceptible to bit flips. Previous work has focused on algorithmic techniques for detecting and correcting bit flips in specific data structures, however, they suffer from lack of generality and often times cannot be implemented in heterogeneous computing environment. Our work takes a novel approach to this problem. We focus on quantifying the impact of a single bit flip on specific floating-point operations. We analyze the error induced by flipping specific bits in the most widely used IEEE floating-point representation in an architecture-agnostic manner, i.e., without requiring proprietary information such as bit flip rates and the vendor-specific circuit designs. We initially study dot products of vectors and demonstrate that not all bit flips create a large error and, more importantly, expected value of the relative magnitude of the error is very sensitive on the bit pattern of the binary representation of the exponent, which strongly depends on scaling. Our results are derived analytically and then verified experimentally with Monte Carlo sampling of random vectors. Furthermore, we consider the natural resilience properties of solvers based on the fixed point iteration and we demonstrate how the resilience of the Jacobi method for linear equations can be significantly improved by rescaling the associated matrix.

  12. Travels with Gates - July 2010

    Science.gov (United States)

    New Sanctions SEOUL, South Korea, July 21, 2010 - Secretary of State Hillary Rodham Clinton, in Seoul - Secretary of State Hillary Rodham Clinton and Defense Secretary Robert M. Gates reaffirmed the U.S zone along with Secretary of State Hillary Rodham Clinton and their South Korean counterparts to

  13. Double-disc gate valve

    International Nuclear Information System (INIS)

    Wheatley, S.J.

    1979-01-01

    The invention relates to an improvement in a conventional double-disc gate valve having a vertically movable gate assembly including a wedge, spreaders slidably engaged therewith, a valve disc carried by the spreaders. When the gate assembly is lowered to a selected point in the valve casing, the valve discs are moved transversely outward to close inlet and outlet ports in the casing. The valve includes hold-down means for guiding the disc-and-spreader assemblies as they are moved transversely outward and inward. If such valves are operated at relatively high differential pressures, they sometimes jam during opening. Such jamming has been a problem for many years in gate valves used in gaseous diffusion plants for the separation of uranium isotopes. The invention is based on the finding that the above-mentioned jamming results when the outlet disc tilts about its horizontal axis in a certain way during opening of the valve. In accordance with the invention, tilting of the outlet disc is maintained at a tolerable value by providing the disc with a rigid downwardly extending member and by providing the casing with a stop for limiting inward arcuate movement of the member to a preselected value during opening of the valve

  14. Bill Gates eyes healthcare market.

    Science.gov (United States)

    Dunbar, C

    1995-02-01

    The entrepreneurial spirit is still top in Bill Gates' mind as he look toward healthcare and other growth industries. Microsoft's CEO has not intention of going the way of other large technology companies that became obsolete before they could compete today.

  15. Dry dock gate stability modelling

    Science.gov (United States)

    Oktoberty; Widiyanto; Sasono, E. J.; Pramono, S.; Wandono, A. T.

    2018-03-01

    The development of marine transportation needs in Indonesia increasingly opens national shipyard business opportunities to provide shipbuilding services to the shipbuilding vessels. That emphasizes the stability of prime. The ship's decking door becomes an integral part of the efficient place and the specification of the use of the asset of its operational ease. This study aims to test the stability of Dry Dock gate with the length of 35.4 meters using Maxsurf and Hydromax in analyzing the calculation were in its assessment using interval per 500 mm length so that it can get detail data toward longitudinal and transverse such as studying Ship planning in general. The test result shows dry dock gate meets IMO standard with ballast construction containing 54% and 68% and using fix ballast can produce GMt 1,924 m, tide height 11,357m. The GMt value indicates dry dick gate can be stable and firmly erect at the base of the mouth dry dock. When empty ballast produces GMt 0.996 which means dry dock date is stable, but can easily be torn down. The condition can be used during dry dock gate treatment.

  16. Influence of different types of low substituted hydroxypropyl cellulose on tableting, disintegration, and floating behaviour of floating drug delivery systems.

    Science.gov (United States)

    Diós, Péter; Pernecker, Tivadar; Nagy, Sándor; Pál, Szilárd; Dévay, Attila

    2015-11-01

    The object of the present study is to evaluate the effect of application of low-substituted hydroxypropyl cellulose (L-HPC) 11 and B1 as excipients promoting floating in gastroretentive tablets. Directly compressed tablets were formed based on experimental design. Face-centred central composite design was applied with two factors and 3 levels, where amount of sodium alginate (X 1) and L-HPC (X2 ) were the numerical factors. Applied types of L-HPCs and their 1:1 mixture were included in a categorical factor (X 3). Studied parameters were floating lag time, floating time, floating force, swelling behaviour of tablets and dissolution of paracetamol, which was used as a model active substance. Due to their physical character, L-HPCs had different water uptake and flowability. Lower flowability and lower water uptake was observed after 60 min at L-HPC 11 compared to L-HPC B1. Shorter floating times were detected at L-HPC 11 and L-HPC mixtures with 0.5% content of sodium alginate, whereas alginate was the only significant factor. Evaluating results of drug release and swelling studies on floating tablets revealed correlation, which can serve to help to understand the mechanism of action of L-HPCs in the field development of gastroretentive dosage forms.

  17. Position control of a floating nuclear power plant

    International Nuclear Information System (INIS)

    Motohashi, K.; Hamamoto, T.; Sasaki, R.; Kojima, M.

    1993-01-01

    In spite of the increasing demand of electricity in Japan, the sites of nuclear power plants suitable for conventional seismic regulations become severely limited. Under these circumstances, several types of advanced siting technology have been developed. Among them, floating power plants have a great advantage of seismic isolation that leads to the seismic design standardization and factory fabrication. The feasibility studies or preliminary designs of floating power plants enclosed by breakwaters in the shallow sea have been carried out last two decades in U.S. and Japan. On the other hand, there are few investigations on the dynamic behavior of floating power plants in the deep sea. The offshore floating nuclear power plants have an additional advantage in that large breakwaters are not required, although the safety checking is inevitable against wind-induced waves. The tension-leg platforms which have been constructed for oil drilling in the deep sea seem to be a promising offshore siting technology of nuclear power plants. The tension-leg mooring system can considerably restrain the heave and pitch of a floating power plant because of significant stiffness in the vertical direction. Different from seismic effects, wind-induced waves may be predicted in advance by making use of ocean weather forecasts using artificial satellites. According to the wave prediction, the position of the floating plant may be controlled by adjusting the water content in ballast tanks and the length of tension-legs before the expected load arrives. The position control system can reduce the wave force acting on the plant and to avoid the unfavorable response behavior of the plant. In this study a semi-submerged circular cylinder with tension-legs is considered as a mathematical model. The configuration of circular cylinder is effective because the dynamic behavior does not depend on incident wave directions. It is also unique in that it can obtain the closed-form solution of

  18. A circuit design for multi-inputs stateful OR gate

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Qiao; Wang, Xiaoping, E-mail: wangxiaoping@hust.edu.cn; Wan, Haibo; Yang, Ran; Zheng, Jian

    2016-09-07

    The in situ logic operation on memristor memory has attracted researchers' attention. In this brief, a new circuit structure that performs a stateful OR logic operation is proposed. When our OR logic is operated in series with other logic operations (IMP, AND), only two voltages should to be changed while three voltages are necessary in the previous one-step OR logic operation. In addition, this circuit structure can be extended to multi-inputs OR operation to perfect the family of logic operations on memristive memory in nanocrossbar based networks. The proposed OR gate can enable fast logic operation, reduce the number of required memristors and the sequential steps. Through analysis and simulation, the feasibility of OR operation is demonstrated and the appropriate parameters are obtained.

  19. A circuit design for multi-inputs stateful OR gate

    International Nuclear Information System (INIS)

    Chen, Qiao; Wang, Xiaoping; Wan, Haibo; Yang, Ran; Zheng, Jian

    2016-01-01

    The in situ logic operation on memristor memory has attracted researchers' attention. In this brief, a new circuit structure that performs a stateful OR logic operation is proposed. When our OR logic is operated in series with other logic operations (IMP, AND), only two voltages should to be changed while three voltages are necessary in the previous one-step OR logic operation. In addition, this circuit structure can be extended to multi-inputs OR operation to perfect the family of logic operations on memristive memory in nanocrossbar based networks. The proposed OR gate can enable fast logic operation, reduce the number of required memristors and the sequential steps. Through analysis and simulation, the feasibility of OR operation is demonstrated and the appropriate parameters are obtained.

  20. Pengaruh Frekuensi Melihat Iklan Floating terhadap Tingkat Kesadaran Merek

    Directory of Open Access Journals (Sweden)

    Forddhanto Bimantoro

    2013-11-01

    Full Text Available Abstract: Floating ad  is online advertisement aiming to stimulate brand awareness by increasing familiarity through reexposing advertisement. This research examines the influence of ARCO Depok members’ exposure of floating ad at www.detik.com to their brand awareness about Samsung LED TV. The frequency of consuming the advertisement is differentiated into three categories, namely three times, five times and never. The result shows that the respondents’ exposure of floating ad could influence the level of brand awareness as much as 40.7%. However, this tendency was not represented in the category of five times. The result also shows that the only control variable which was able to significantly influence the level of brand awareness was the variable of respondents’ visitation to the site of detik.com. Abstrak: Iklan floating merupakan iklan di media internet yang bertujuan mencapai kesadaran merek dengan cara meningkatkan familiarity melalui frekuensi pengulangan iklan. Frekuensi melihat iklan floating dibedakan  dengan memilah kelompok responden yang dikenai frekuensi melihat iklan 3 kali, 5 kali dan tidak melihat iklan. Penelitian ini menguji pengaruh frekuensi melihat iklan floating di www.detik.com terhadap tingkat kesadaran merek Samsung LED TV pada warga ARCO Depok, Jawa Barat. Hasil penelitian menunjukkan bahwa frekuensi melihat iklan floating dapat mempengaruhi tingkat kesadaran merek sebesar 40,7%; namun tidak terbukti pada kelompok yang melihat iklan sebanyak lima kali. Variabel kontrol yang mampu mempengaruhi tingkat kesadaran merek secara signifikan hanya variabel kunjungan responden ke detik.com.Â

  1. The study to estimate the floating population in Seoul, Korea.

    Science.gov (United States)

    Lee, Geon Woo; Lee, Yong Jin; Kim, Youngeun; Hong, Seung-Han; Kim, Soohwaun; Kim, Jeong Soo; Lee, Jong Tae; Shin, Dong Chun; Lim, Youngwook

    2017-01-01

    Traffic-related pollutants have been reported to increase the morbidity of respiratory diseases. In order to apply management policies related to motor vehicles, studies of the floating population living in cities are important. The rate of metro rail transit system use by passengers residing in Seoul is about 54% of total public transportation use. Through the rate of metro use, the people-flow ratios in each administrative area were calculated. By applying a people-flow ratio based on the official census count, the floating population in 25 regions was calculated. The reduced level of deaths among the floating population in 14 regions having the roadside monitoring station was calculated as assuming a 20% reduction of mobile emission based on the policy. The hourly floating population size was calculated by applying the hourly population ratio to the regional population size as specified in the official census count. The number of people moving from 5 a.m. to next day 1 a.m. could not be precisely calculated when the population size was applied, but no issue was observed that would trigger a sizable shift in the rate of population change. The three patterns of increase, decrease, and no change of population in work hours were analyzed. When the concentration of particulate matter less than 10 μm in aerodynamic diameter was reduced by 20%, the number of excess deaths varied according to the difference of the floating population. The effective establishment of directions to manage the pollutants in cities should be carried out by considering the floating population. Although the number of people using the metro system is only an estimate, this disadvantage was supplemented by calculating inflow and outflow ratio of metro users per time in the total floating population in each region. Especially, 54% of metro usage in public transport causes high reliability in application.

  2. The study to estimate the floating population in Seoul, Korea

    Directory of Open Access Journals (Sweden)

    Geon Woo Lee

    2017-05-01

    Full Text Available Traffic-related pollutants have been reported to increase the morbidity of respiratory diseases. In order to apply management policies related to motor vehicles, studies of the floating population living in cities are important. The rate of metro rail transit system use by passengers residing in Seoul is about 54% of total public transportation use. Through the rate of metro use, the people-flow ratios in each administrative area were calculated. By applying a people-flow ratio based on the official census count, the floating population in 25 regions was calculated. The reduced level of deaths among the floating population in 14 regions having the roadside monitoring station was calculated as assuming a 20% reduction of mobile emission based on the policy. The hourly floating population size was calculated by applying the hourly population ratio to the regional population size as specified in the official census count. The number of people moving from 5 a.m. to next day 1 a.m. could not be precisely calculated when the population size was applied, but no issue was observed that would trigger a sizable shift in the rate of population change. The three patterns of increase, decrease, and no change of population in work hours were analyzed. When the concentration of particulate matter less than 10 μm in aerodynamic diameter was reduced by 20%, the number of excess deaths varied according to the difference of the floating population. The effective establishment of directions to manage the pollutants in cities should be carried out by considering the floating population. Although the number of people using the metro system is only an estimate, this disadvantage was supplemented by calculating inflow and outflow ratio of metro users per time in the total floating population in each region. Especially, 54% of metro usage in public transport causes high reliability in application.

  3. Control electronic platform based on floating-point DSP and FPGA for a NPC multilevel back-to-back converter

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez, Francisco J.; Cobreces, Santiago; Bueno, Emilio J.; Hernandez, Alvaro; Mateos, Raul; Espinosa, Felipe [Department of Electronics, University of Alcala, Alcala de Henares, Madrid (Spain)

    2008-09-15

    Modern energy concepts as Distributed Power Generation are changing the appearance of electric distribution and transmission and challenging power electronics researchers, which try to develop new solutions of electronic controllers. The aim is to enable the implementation of new and more complex control algorithms to verify the last standards related to the grid energy quality for new power converters, and, also, for equipments which nowadays are operating. This paper presents the design, implementation and test of a novel real-time controller for a Neutral Point Clamped (NPC) (three-level) multilevel converter based on a floating-point Digital Signal Processor (DSP) and on a Field-Programmable Gate Array (FPGA), by operating in a cooperative way. Although the proposed system can be readily applied to any power electronic application, in this work, it is focused on the next system: a 150 kVA back-to-back three-level NPC Voltage Source Converter (VSC) for wind power applications. (author)

  4. A refractory metal gate approach for micronic CMOS technology

    International Nuclear Information System (INIS)

    Lubowiecki, V.; Ledys, J.L.; Plossu, C.; Balland, B.

    1987-01-01

    In the future, devices scaling down, integration density and performance improvements are going to bring a number of conventional circuit design and process techniques to their fundamental limits. To avoid any severe limitations in MOS ULSI (Ultra Large Scale Integration) technologies, interconnection materials and schemes are required to emerge, in order to face the Megabits memory field. Among those, the gate approach will obviously take a keyrole, when the operating speed of ULSI chips will reach the practical upper limits imposed by parasitic resistances and capacitances which stem from the circuit interconnect wiring. Even if fairly suitable for MOS process, doped polycrystalline silicon is being gradually replaced by refractory metal silicide or polycide structures, which match better with low resistivity requirements. However, as we approach the submicronic IC's, higher conductivity materials will be paid more and more attention. Recently, works have been devoted and published on refractory metal gate technologies. Molybdenum or tungsten, deposited either by CVD or PVD methods, are currently reported even if some drawbacks in their process integration still remain. This paper is willing to present such an approach based on tungsten (more reliable than Molybdenum deposited by LPCVD (giving more conductive and more stable films than PVD). Deposition process will be first described. Then CMOS process flow will allow us to focus on specific refractory metal gate issues. Finally, electrical and physical properties will be assessed, which will demonstrate the feasibility of such a technology as well as the compatibility of the tungsten with most of the usual techniques

  5. Floating venous thrombi: diagnosis with spiral-CT-venography

    International Nuclear Information System (INIS)

    Gartenschlaeger, M.; Schmidt, J.A.

    1996-01-01

    Local application of contrast agent into an ipsilateral dorsal foot vein and spiral CT were used to examine 16 consecutive cases with deep venous thrombosis proven at conventional venography; in addition, colour Doppler flow imaging was performed. At conventional venography, 8/16 thrombi appeared to be floating and the remaining 8/16 were adherent to the vessel wall. Spiral-CT showed 15/16 thrombi to be adherent to the vessel wall; the floating thrombus correlated with findings in conventional venography. At colour Doppler flow imaging 3/16 thrombi were considered floating, one of them was discordant to conventional venography. The comparison of conventional venography to spiral-CT demonstrates complete agreement for adherence to vessel wall seen in conventional venography (p=1,0) and significant discordance in cases with free-floating appearance in conventional venography. Adherence of thrombi to the wall of the vessel at conventional venography is in agreement with computed tomography. Conventional venography probably overestimates the prevalence of free floating thrombi. (orig./MG) [de

  6. Free-floating planets from microlensing

    Science.gov (United States)

    Sumi, Takahiro

    2014-06-01

    Gravitational microlensing has an unique sensitivity to exoplanets at outside of the snow-line and even exoplanets unbound to any host stars because the technique does not rely on any light from the host but the gravity of the lens. MOA and OGLE collaborations reported the discovery of a population of unbound or distant Jupiter-mass objects, which are almost twice (1.8_{-0.8}^{+1.7}) as common as main-sequence stars, based on two years of gravitational microlensing survey observations toward the Galactic Bulge. These planetary-mass objects have no host stars that can be detected within about ten astronomical units by gravitational microlensing. However a comparison with constraints from direct imaging suggests that most of these planetary-mass objects are not bound to any host star. The such short-timescale unbound planetary candidates have been detected with the similar rate in on-going observations and these groups are working to update the analysis with larger statistics. Recently, there are also discoveries of free-floating planetary mass objects by the direct imaging in young star-forming regions and in the moving groups, but these objects are limited to massive objects of 3 to 15 Jupiter masses.They are more massive than the population found by microlensing. So they may be a different population with the different formation process, either similar with that of stars and brown dwarfs, or formed in proto-planetary disks and subsequently scattered into unbound or very distant orbits. It is important to fill the gap of these mass ranges to fully understand these populations. The Wide Field Infrared Survey Telescope (WFIRST) is the highest ranked recommendation for a large space mission in the recent New Worlds, New Horizons (NWNH) in Astronomy and Astrophysics 2010 Decadal Survey. Exoplanet microlensing program is one of the primary science of WFIRST. WFIRST will find about 3000 bound planets and 2000 unbound planets by the high precision continuous survey 15 min

  7. [Extinction and Reconsolidation of Memory].

    Science.gov (United States)

    Zuzina, A B; Balaban, P M

    2015-01-01

    Retrieval of memory followed by reconsolidation can strengthen a memory, while retrieval followed by extinction results in a decrease of memory performance due to weakening of existing memory or formation of a competing memory. In our study we analyzed the behavior and responses of identified neurons involved in the network underlying aversive learning in terrestrial snail Helix, and made an attempt to describe the conditions in which the retrieval of memory leads either to extinction or reconsolidation. In the network underlying the withdrawal behavior, sensory neurons, premotor interneurons, motor neurons, and modulatory for this network serotonergic neurons are identified and recordings from representatives of these groups were made before and after aversive learning. In the network underlying feeding behavior, the premotor modulatory serotonergic interneurons and motor neurons involved in motor program of feeding are identified. Analysis of changes in neural activity after aversive learning showed that modulatory neurons of feeding behavior do not demonstrate any changes (sometimes a decrease of responses to food was observed), while responses to food in withdrawal behavior premotor interneurons changed qualitatively, from under threshold EPSPs to spike discharges. Using a specific for serotonergic neurons neurotoxin 5,7-DiHT it was shown previously that the serotonergic system is necessary for the aversive learning, but is not necessary for maintenance and retrieval of this memory. These results suggest that the serotonergic neurons that are necessary as part of a reinforcement for developing the associative changes in the network may be not necessary for the retrieval of memory. The hypothesis presented in this review concerns the activity of the "reinforcement" serotonergic neurons that is suggested to be the gate condition for the choice between extinction/reconsolidation triggered by memory retrieval: if these serotonergic neurons do not respond during the

  8. Linear gate with prescaled window

    Energy Technology Data Exchange (ETDEWEB)

    Koch, J; Bissem, H H; Krause, H; Scobel, W [Hamburg Univ. (Germany, F.R.). 1. Inst. fuer Experimentalphysik

    1978-07-15

    An electronic circuit is described that combines the features of a linear gate, a single channel analyzer and a prescaler. It allows selection of a pulse height region between two adjustable thresholds and scales the intensity of the spectrum within this window down by a factor 2sup(N) (0<=N<=9), whereas the complementary part of the spectrum is transmitted without being affected.

  9. Some aspects of arctic offshore floating structures

    Energy Technology Data Exchange (ETDEWEB)

    Lubbad, Raed Khalil

    2011-01-15

    The present work highlights some aspects related to the analyses of Arctic offshore floating structures. This thesis consists of five papers, which can be divided into two main categories. One category deals with the dynamics of slender structures with an emphasis on the prediction and suppression of vortex induced vibrations (VIV), and the other category examines the process of interaction between sloping structures and sea ice with focus on developing a numerical model to simulate this process in real time. Slender structures, such as mooring lines and marine risers, are very important for the offshore petroleum industry, which is currently approaching deeper waters. Increasingly, attention has been focused on predicting the susceptibility of these structures to VIV. In this thesis, two asymptotic techniques namely, the local analysis and the WKB methods, were used to derive closed-form solutions for the natural frequencies and mode shapes of slender line-like structures. Both the top-tensioned nearly-vertical configuration and the catenary configuration were considered. The accuracy of the solutions derived was established through comparison with other analytic solution techniques and with results of numerical finite element solutions. The effects of the bending stiffness and the effects of approximating the tension variation as a linear function were discussed. Experimental data on the multi-modal in-line and cross-flow response behaviour of a towed catenary model were analysed to examine the usefulness of the solutions for predicting the response frequencies and envelopes due to VIV. Helical strakes are often used as a mitigating measure to suppress the VIV of slender structures. This thesis presented an innovative method to fit ropes helically to a riser in the installation phase. Such a procedure will help to overcome the handling problem associated with the use of conventional sharp-edged strakes. Experimental investigations were then performed to verify

  10. Research of design challenges and new technologies for floating LNG

    Directory of Open Access Journals (Sweden)

    Dong-Hyun Lee

    2014-06-01

    Full Text Available With the rate of worldwide LNG demand expected to grow faster than that of gas demand, most major oil companies are currently investing their resources to develop floating LNG-FLNG (i.e. LNG FSRU and LNG FPSO. The global Floating LNG (FLNG market trend will be reviewed based on demand and supply chain relationships. Typical technical issues associated with FLNG design are categorized in terms of global performance evaluation. Although many proven technologies developed through LNG carrier and oil FPSO projects are available for FLNG design, we are still faced with several technical challenges to clear for successful FLNG projects. In this study, some of the challenges encountered during development of the floating LNG facility (i.e. LNG FPSO and FSRU will be reviewed together with their investigated solution. At the same time, research of new LNG-related technologies such as combined containment system will be presented.

  11. Floating cultivation of marine cyanobacteria using coal fly ash.

    Science.gov (United States)

    Matsumoto, M; Yoshida, E; Takeyama, H; Matsunaga, T

    2000-01-01

    The aim of this study was to develop improved methodologies for bulk culturing of biotechnologically useful marine cyanobacteria in the open ocean. We have investigated the viability of using coal fly ash (CFA) blocks as the support medium in a novel floating culture system for marine micro-algae. The marine cyanobacterium Synechococcus sp. NKBG 040607 was found to adhere to floating CFA blocks in liquid culture medium. Maximum density of attached cells of 2.0 x 10(8) cells/cm2 was achieved using seawater. The marine cyanobacterium Synechococcus sp. NKBG 042902 weakly adhered to floating CFA blocks in BG-11 medium. Increasing the concentration of calcium ion in the culture medium enhanced adherence to CFA blocks.

  12. Mathematical modeling of large floating roof reservoir temperature arena

    Directory of Open Access Journals (Sweden)

    Liu Yang

    2018-03-01

    Full Text Available The current study is a simplification of related components of large floating roof tank and modeling for three dimensional temperature field of large floating roof tank. The heat transfer involves its transfer between the hot fluid in the oil tank, between the hot fluid and the tank wall and between the tank wall and the external environment. The mathematical model of heat transfer and flow of oil in the tank simulates the temperature field of oil in tank. Oil temperature field of large floating roof tank is obtained by numerical simulation, map the curve of central temperature dynamics with time and analyze axial and radial temperature of storage tank. It determines the distribution of low temperature storage tank location based on the thickness of the reservoir temperature. Finally, it compared the calculated results and the field test data; eventually validated the calculated results based on the experimental results.

  13. Numerical modelling of floating debris in the world's oceans.

    Science.gov (United States)

    Lebreton, L C-M; Greer, S D; Borrero, J C

    2012-03-01

    A global ocean circulation model is coupled to a Lagrangian particle tracking model to simulate 30 years of input, transport and accumulation of floating debris in the world ocean. Using both terrestrial and maritime inputs, the modelling results clearly show the formation of five accumulation zones in the subtropical latitudes of the major ocean basins. The relative size and concentration of each clearly illustrate the dominance of the accumulation zones in the northern hemisphere, while smaller seas surrounded by densely populated areas are also shown to have a high concentration of floating debris. We also determine the relative contribution of different source regions to the total amount of material in a particular accumulation zone. This study provides a framework for describing the transport, distribution and accumulation of floating marine debris and can be continuously updated and adapted to assess scenarios reflecting changes in the production and disposal of plastic worldwide. Copyright © 2012 Elsevier Ltd. All rights reserved.

  14. Formulation and evaluation of glipizide floating-bioadhesive tablets

    Directory of Open Access Journals (Sweden)

    Jayvadan K. Patel

    2010-10-01

    Full Text Available The purpose of this study was formulation and in vitro evaluation of floating-bioadhesive tablets to lengthen the stay of glipizide in its absorption area. Effervescent tablets were made using chitosan (CH, hydroxypropyl methylcellulose (HPMC, carbopolP934 (CP, polymethacrylic acid (PMA, citric acid, and sodium bicarbonate. Tablets with 5% effervescent base had longer lag time than 10%. The type of polymer had no significant effect on the floating lag time. All tablets floated atop the medium for 23-24 hr. Increasing carbopolP934 caused higher bioadhesion than chitosan (p < 0.05. All formulations showed a Higuchi, non-Fickian release mechanism. Tablets with 10% effervescent base, 80% CH/20% HPMC, or 80% CP/20% PMA seemed desirable.

  15. Investigation of Tank 241-AN-101 Floating Solids

    Energy Technology Data Exchange (ETDEWEB)

    Kraft, Douglas P. [Washington River Protection Solutions, LLC, Richland, VA (United States); Meznarich, H. K. [Washington River Protection Solutions, LLC, Richland, VA (United States)

    2017-10-30

    Tank 241-AN-101 is the receiver tank for retrieval of several C-Farms waste tanks, including Tanks 241-C-102 and 241-C-111. Tank 241 C 111 received first-cycle decontamination waste from the bismuth phosphate process and Plutonium and Uranium Extraction cladding waste, as well as hydraulic fluid. Three grab samples, 1AN-16-01, 1AN-16-01A, and 1AN-16-01B, were collected at the surface of Tank 241-AN-101 on April 25, 2016, after Tank 241-C-111 retrieval was completed. Floating solids were observed in the three grab samples in the 11A hot cell after the samples were received at the 222-S Laboratory. Routine chemical analyses, solid phase characterization on the floating and settled solids, semivolatile organic analysis mainly on the aqueous phase for identification of degradation products of hydraulic fluids were performed. Investigation of the floating solids is reported.

  16. Optimal Control of a Ballast-Stabilized Floating Wind Turbine

    DEFF Research Database (Denmark)

    Christiansen, Søren; Knudsen, Torben; Bak, Thomas

    2011-01-01

    Offshore wind energy capitalizes on the higher and less turbulent wind speeds at sea. The use of floating structures for deeper waters is being explored. The control objective is a tradeoff between power capture and fatigue, especially that produced by the oscillations caused by the reduced...... structural stiffness of a floating installation in combination with a coupling between the fore–aft motion of the tower and the blade pitch. To address this problem, the present paper models a ballast-stabilized floating wind turbine, and suggests a linear quadratic regulator (LQR) in combination with a wind...... estimator and a state observer. The results are simulated using aero elastic code and analysed in terms of damage equivalent loads. When compared to a baseline controller, this controller clearly demonstrates better generator speed and power tracking while reducing fatigue loads....

  17. Aerodynamics and Motion Performance of the H-Type Floating Vertical Axis Wind Turbine

    Directory of Open Access Journals (Sweden)

    Ying Guo

    2018-02-01

    Full Text Available Aerodynamics and motion performance of the floating vertical wind turbine (VAWT were studied in this paper, where the wind turbine was H-type and the floating foundation was truss spar type. Based on the double-multiple-stream-tube theory, the formulae were deduced to calculate the aerodynamic loads acting on the wind turbine considering the motions of the floating foundation. The surge-heave-pitch nonlinear coupling equations of the H-type floating VAWT were established. Aerodynamics and motion performance of a 5 MW H-type floating VAWT was studied, and the effect of the floating foundation motions on the aerodynamic loads was analyzed. It is shown that the motions of the floating foundation on the aerodynamics cannot be ignored. The motion of the H-type floating VAWT was also compared with that of the Φ-type floating VAWT: they have the same floating foundation, rated output power, mooring system and total displacement. The results show that the H-type floating VAWT has better motion performance, and the mean values of surge, heave and pitch of the H-type floating VAWT are much smaller comparing with the Φ-type floating VAWT.

  18. Capture of free-floating planets by planetary systems

    Science.gov (United States)

    Goulinski, Nadav; Ribak, Erez N.

    2018-01-01

    Evidence of exoplanets with orbits that are misaligned with the spin of the host star may suggest that not all bound planets were born in the protoplanetary disc of their current planetary system. Observations have shown that free-floating Jupiter-mass objects can exceed the number of stars in our Galaxy, implying that capture scenarios may not be so rare. To address this issue, we construct a three-dimensional simulation of a three-body scattering between a free-floating planet and a star accompanied by a Jupiter-mass bound planet. We distinguish between three different possible scattering outcomes, where the free-floating planet may get weakly captured after the brief interaction with the binary, remain unbound or 'kick out' the bound planet and replace it. The simulation was performed for different masses of the free-floating planets and stars, as well as different impact parameters, inclination angles and approach velocities. The outcome statistics are used to construct an analytical approximation of the cross-section for capturing a free-floating planet by fitting their dependence on the tested variables. The analytically approximated cross-section is used to predict the capture rate for these kinds of objects, and to estimate that about 1 per cent of all stars are expected to experience a temporary capture of a free-floating planet during their lifetime. Finally, we propose additional physical processes that may increase the capture statistics and whose contribution should be considered in future simulations in order to determine the fate of the temporarily captured planets.

  19. Noise-assisted morphing of memory and logic function

    International Nuclear Information System (INIS)

    Kohar, Vivek; Sinha, Sudeshna

    2012-01-01

    We demonstrate how noise allows a bistable system to behave as a memory device, as well as a logic gate. Namely, in some optimal range of noise, the system can operate flexibly, both as a NAND/AND gate and a Set–Reset latch, by varying an asymmetrizing bias. Thus we show how this system implements memory, even for sub-threshold input signals, using noise constructively to store information. This can lead to the development of reconfigurable devices, that can switch efficiently between memory tasks and logic operations. -- Highlights: ► We consider a nonlinear system in a noisy environment. ► We show that the system can function as a robust memory element. ► Further, the response of the system can be easily morphed from memory to logic operations. ► Such systems can potentially act as building blocks of “smart” computing devices.

  20. Floating electrode microelectromechanical system capacitive switches: A different actuation mechanism

    Science.gov (United States)

    Papaioannou, G.; Giacomozzi, F.; Papandreou, E.; Margesin, B.

    2011-08-01

    The paper investigates the actuation mechanism in floating electrode microelectromechanical system capacitive switches. It is demonstrated that in the pull-in state, the device operation turns from voltage to current controlled actuation. The current arises from Poole-Frenkel mechanism in the dielectric film and Fowler-Nordheim in the bridge-floating electrode air gap. The pull-out voltage seems to arise from the abrupt decrease of Fowler-Nordheim electric field intensity. This mechanism seems to be responsible for the very small difference with respect to the pull-in voltage.

  1. Floating natural gas processing plants. Technical ideal or feasible technology

    Energy Technology Data Exchange (ETDEWEB)

    Backhaus, H

    1977-04-01

    Realizability of floating natural gas processing plants is decisively influenced by the economy of the system. Illustrated by the example of the natural gas product LPG (liquefied petroleum gas), a model cost calculation is carried out. It is demonstrated that the increase in the price level during the 1973/1974 energy crisis is an important factor for the realiability in terms of economy of such complicated technical systems. Another aspect which the model calculation revealed is that the economy of floating natural gas processing plants and storage systems can only be estimated in connection with other system components.

  2. Development of floating production systems for the new era

    International Nuclear Information System (INIS)

    Wennesland, J.M.

    1995-01-01

    Maritime Group will give a presentation of present and future trends within the floating production area. Based on the successful operation of Petrojarl 1 (Tentech 885) and now lately the Gryphon A (Tentech 850 C) operated by Kerr McGee a number of floating production systems are now under construction/design for North Sea applications. A status of three developments will be given with emphasize on field development scenarios and market opportunities for the vessels. Based on these on-going projects a discussion of future development trends and possibilities will be presented with special attention to making smaller North-Sea oil fields economically profitable

  3. Tunnel field-effect transistor charge-trapping memory with steep subthreshold slope and large memory window

    Science.gov (United States)

    Kino, Hisashi; Fukushima, Takafumi; Tanaka, Tetsu

    2018-04-01

    Charge-trapping memory requires the increase of bit density per cell and a larger memory window for lower-power operation. A tunnel field-effect transistor (TFET) can achieve to increase the bit density per cell owing to its steep subthreshold slope. In addition, a TFET structure has an asymmetric structure, which is promising for achieving a larger memory window. A TFET with the N-type gate shows a higher electric field between the P-type source and the N-type gate edge than the conventional FET structure. This high electric field enables large amounts of charges to be injected into the charge storage layer. In this study, we fabricated silicon-oxide-nitride-oxide-semiconductor (SONOS) memory devices with the TFET structure and observed a steep subthreshold slope and a larger memory window.

  4. A high performance gate drive for large gate turn off thyristors

    Energy Technology Data Exchange (ETDEWEB)

    Szilagyi, C.P.

    1993-01-01

    Past approaches to gate turn-off (GTO) gating are application oriented, inefficient and dissipate power even when inactive. They allow the gate to avalanch, and do not reduce GTO turn-on and turn-off losses. A new approach is proposed which will allow modular construction and adaptability to large GTOs in the 50 amp to 2000 amp range. The proposed gate driver can be used in large voltage source and current source inverters and other power converters. The approach consists of a power metal-oxide-silicon field effect transistor (MOSFET) technology gating unit, with associated logic and supervisory circuits and an isolated flyback converter as the dc power source for the gating unit. The gate driver formed by the gating unit and the flyback converter is designed for 4000 V isolation. Control and supervisory signals are exchanged between the gate driver and the remote control system via fiber optics. The gating unit has programmable front-porch current amplitude and pulse-width, programmable closed-loop controlled back-porch current, and a turn-off switch capable of supplying negative gate current at demand as a function of peak controllable forward anode current. The GTO turn-on, turn-off and gate avalanch losses are reduced to a minimum. The gate driver itself has minimum operating losses. Analysis, design and practical realization are reported. 19 refs., 54 figs., 1 tab.

  5. Gold nanoparticle-pentacene memory-transistors

    OpenAIRE

    Novembre , Christophe; Guerin , David; Lmimouni , Kamal; Gamrat , Christian; Vuillaume , Dominique

    2008-01-01

    We demonstrate an organic memory-transistor device based on a pentacene-gold nanoparticles active layer. Gold (Au) nanoparticles are immobilized on the gate dielectric (silicon dioxide) of a pentacene transistor by an amino-terminated self-assembled monolayer. Under the application of writing and erasing pulses on the gate, large threshold voltage shift (22 V) and on/off drain current ratio of ~3E4 are obtained. The hole field-effect mobility of the transistor is similar in the on and off sta...

  6. The response of pile-guided floats subjected to dynamic loading : volume I final report.

    Science.gov (United States)

    2014-08-01

    Pile : - : Guided floats can be a desirable alternative to stationary berthing structures. Both floats and guide piles are subjected to dynamic : forces such as wind generated waves and impacts from vessels. This project developed a rational basis fo...

  7. A bistable electromagnetically actuated rotary gate microvalve

    International Nuclear Information System (INIS)

    Luharuka, Rajesh; Hesketh, Peter J

    2008-01-01

    Two types of rotary gate microvalves are developed for flow modulation in microfluidic systems. These microvalves have been tested for an open flow rate of up to 100 sccm and operate under a differential pressure of 6 psig with flow modulation of up to 100. The microvalve consists of a suspended gate that rotates in the plane of the chip to regulate flow through the orifice. The gate is suspended by a novel fully compliant in-plane rotary bistable micromechanism (IPRBM) that advantageously constrains the gate in all degrees of freedom except for in-plane rotational motion. Multiple inlet/outlet orifices provide flexibility of operating the microvalve in three different flow configurations. The rotary gate microvalve is switched with an external electromagnetic actuator. The suspended gate is made of a soft magnetic material and its electromagnetic actuation is based on the operating principle of a variable-reluctance stepper motor

  8. Experimental superposition of orders of quantum gates

    Science.gov (United States)

    Procopio, Lorenzo M.; Moqanaki, Amir; Araújo, Mateus; Costa, Fabio; Alonso Calafell, Irati; Dowd, Emma G.; Hamel, Deny R.; Rozema, Lee A.; Brukner, Časlav; Walther, Philip

    2015-01-01

    Quantum computers achieve a speed-up by placing quantum bits (qubits) in superpositions of different states. However, it has recently been appreciated that quantum mechanics also allows one to ‘superimpose different operations'. Furthermore, it has been shown that using a qubit to coherently control the gate order allows one to accomplish a task—determining if two gates commute or anti-commute—with fewer gate uses than any known quantum algorithm. Here we experimentally demonstrate this advantage, in a photonic context, using a second qubit to control the order in which two gates are applied to a first qubit. We create the required superposition of gate orders by using additional degrees of freedom of the photons encoding our qubits. The new resource we exploit can be interpreted as a superposition of causal orders, and could allow quantum algorithms to be implemented with an efficiency unlikely to be achieved on a fixed-gate-order quantum computer. PMID:26250107

  9. Deterministic quantum controlled-PHASE gates based on non-Markovian environments

    Science.gov (United States)

    Zhang, Rui; Chen, Tian; Wang, Xiang-Bin

    2017-12-01

    We study the realization of the quantum controlled-PHASE gate in an atom-cavity system beyond the Markovian approximation. The general description of the dynamics for the atom-cavity system without any approximation is presented. When the spectral density of the reservoir has the Lorentz form, by making use of the memory backflow from the reservoir, we can always construct the deterministic quantum controlled-PHASE gate between a photon and an atom, no matter the atom-cavity coupling strength is weak or strong. While, the phase shift in the output pulse hinders the implementation of quantum controlled-PHASE gates in the sub-Ohmic, Ohmic or super-Ohmic reservoirs.

  10. High speed gated x-ray imagers

    International Nuclear Information System (INIS)

    Kilkenny, J.D.; Bell, P.; Hanks, R.; Power, G.; Turner, R.E.; Wiedwald, J.

    1988-01-01

    Single and multi-frame gated x-ray images with time-resolution as fast as 150 psec are described. These systems are based on the gating of microchannel plates in a stripline configuration. The gating voltage comes from the avalanche breakdown of reverse biased p-n junction producing high power voltage pulses as short as 70 psec. Results from single and four frame x-ray cameras used on Nova are described. 8 refs., 9 figs

  11. Seven channel gated charge to time converter

    Energy Technology Data Exchange (ETDEWEB)

    Stubbs, R J; Waddoup, W D [Durham Univ. (UK)

    1977-11-01

    By using a hybrid integrated circuit seven independent gated charge to time converters have been constructed in a single width NIM module. Gate widths from < approximately 10 ns to approximately 300 ns are possible with a resolution of 0.25 pC, linearity is better than +-1 pC over 2.5 decades of input signal height. Together with a multichannel scaling system described in the following paper one has a very powerful multichannel gated ADC system.

  12. Gating-ML: XML-based gating descriptions in flow cytometry.

    Science.gov (United States)

    Spidlen, Josef; Leif, Robert C; Moore, Wayne; Roederer, Mario; Brinkman, Ryan R

    2008-12-01

    The lack of software interoperability with respect to gating due to lack of a standardized mechanism for data exchange has traditionally been a bottleneck, preventing reproducibility of flow cytometry (FCM) data analysis and the usage of multiple analytical tools. To facilitate interoperability among FCM data analysis tools, members of the International Society for the Advancement of Cytometry (ISAC) Data Standards Task Force (DSTF) have developed an XML-based mechanism to formally describe gates (Gating-ML). Gating-ML, an open specification for encoding gating, data transformations and compensation, has been adopted by the ISAC DSTF as a Candidate Recommendation. Gating-ML can facilitate exchange of gating descriptions the same way that FCS facilitated for exchange of raw FCM data. Its adoption will open new collaborative opportunities as well as possibilities for advanced analyses and methods development. The ISAC DSTF is satisfied that the standard addresses the requirements for a gating exchange standard.

  13. Benchmarking gate-based quantum computers

    Science.gov (United States)

    Michielsen, Kristel; Nocon, Madita; Willsch, Dennis; Jin, Fengping; Lippert, Thomas; De Raedt, Hans

    2017-11-01

    With the advent of public access to small gate-based quantum processors, it becomes necessary to develop a benchmarking methodology such that independent researchers can validate the operation of these processors. We explore the usefulness of a number of simple quantum circuits as benchmarks for gate-based quantum computing devices and show that circuits performing identity operations are very simple, scalable and sensitive to gate errors and are therefore very well suited for this task. We illustrate the procedure by presenting benchmark results for the IBM Quantum Experience, a cloud-based platform for gate-based quantum computing.

  14. Electrocardiographic gating in positron emission computed tomography

    International Nuclear Information System (INIS)

    Hoffman, E.J.; Phelps, M.E.; Wisenberg, G.; Schelbert, H.R.; Kuhl, D.E.

    1979-01-01

    Electrocardiographic (ECG) synchronized multiple gated data acquisition was employed with positron emission computed tomography (ECT) to obtain images of myocardial blood pool and myocardium. The feasibility and requirements of multiple gated data acquisition in positron ECT were investigated for 13NH3, ( 18 F)-2-fluoro-2-D-deoxyglucose, and ( 11 C)-carboxyhemoglobin. Examples are shown in which image detail is enhanced and image interpretation is facilitated when ECG gating is employed in the data collection. Analysis of count rate data from a series of volunteers indicates that multiple, statistically adequate images can be obtained under a multiple gated data collection format without an increase in administered dose

  15. Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers

    International Nuclear Information System (INIS)

    Stolichnov, I; Riester, S W E; Mikheev, E; Setter, N; Rushforth, A W; Edmonds, K W; Campion, R P; Foxon, C T; Gallagher, B L; Jungwirth, T; Trodahl, H J

    2011-01-01

    (Ga, Mn)As and other diluted magnetic semiconductors (DMS) attract a great deal of attention for potential spintronic applications because of the possibility of controlling the magnetic properties via electrical gating. Integration of a ferroelectric gate on the DMS channel adds to the system a non-volatile memory functionality and permits nanopatterning via the polarization domain engineering. This topical review is focused on the multiferroic system, where the ferromagnetism in the (Ga, Mn)As DMS channel is controlled by the non-volatile field effect of the spontaneous polarization. Use of ferroelectric polymer gates in such heterostructures offers a viable alternative to the traditional oxide ferroelectrics generally incompatible with DMS. Here we review the proof-of-concept experiments demonstrating the ferroelectric control of ferromagnetism, analyze the performance issues of the ferroelectric gates and discuss prospects for further development of the ferroelectric/DMS heterostructures toward the multiferroic field effect transistor. (topical review)

  16. 14 CFR 23.533 - Hull and main float bottom pressures.

    Science.gov (United States)

    2010-01-01

    ... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Hull and main float bottom pressures. 23... Water Loads § 23.533 Hull and main float bottom pressures. (a) General. The hull and main float....00213; K2=hull station weighing factor, in accordance with figure 2 of appendix I of this part; VS1...

  17. 14 CFR 25.533 - Hull and main float bottom pressures.

    Science.gov (United States)

    2010-01-01

    ... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Hull and main float bottom pressures. 25... AIRCRAFT AIRWORTHINESS STANDARDS: TRANSPORT CATEGORY AIRPLANES Structure Water Loads § 25.533 Hull and main float bottom pressures. (a) General. The hull and main float structure, including frames and bulkheads...

  18. 14 CFR 23.529 - Hull and main float landing conditions.

    Science.gov (United States)

    2010-01-01

    ... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Hull and main float landing conditions. 23... Water Loads § 23.529 Hull and main float landing conditions. (a) Symmetrical step, bow, and stern... directed perpendicularly to the keel line. (b) Unsymmetrical landing for hull and single float seaplanes...

  19. Floating Collection in an Academic Library: An Audacious Experiment That Succeeded

    Science.gov (United States)

    Coopey, Barbara; Eshbach, Barbara; Notartomas, Trish

    2016-01-01

    Can a floating collection thrive in a large multicampus academic research library? Floating collections have been successful in public libraries for some time, but it is uncommon for academic libraries and unheard of for a large academic library system. This article will discuss the investigation into the feasibility of a floating collection at…

  20. Sabrewing: A lightweight architecture for combined floating-point and integer arithmetic

    NARCIS (Netherlands)

    Bruintjes, Tom; Walters, K.H.G.; Gerez, Sabih H.; Molenkamp, Egbert; Smit, Gerardus Johannes Maria

    In spite of the fact that floating-point arithmetic is costly in terms of silicon area, the joint design of hardware for floating-point and integer arithmetic is seldom considered. While components like multipliers and adders can potentially be shared, floating-point and integer units in

  1. Recent Developments in the Construction of Floating Structures ...

    African Journals Online (AJOL)

    This paper presents the applications of floating structures in (a) creating land from the ocean for airports, container ports, cruise terminals, oil storage, power plants, fish farms, recreation facilities, aquatic observatories, residential facilities, marinas and even relay bases for receiving micro waves from outer space, etc, ...

  2. A global inventory of small floating plastic debris

    NARCIS (Netherlands)

    Sebille, van Erik; Wilcox, Chris; Lebreton, Laurent; Maximenko, Nikolai; Hardesty, Britta Denise; Franeker, van J.A.; Eriksen, Marcus; Siegel, David; Galgani, F.; Law, Kara Lavender

    2015-01-01

    Microplastic debris floating at the ocean surface can harm marine life. Understanding the severity of this harm requires knowledge of plastic abundance and distributions. Dozens of expeditions measuring microplastics have been carried out since the 1970s, but they have primarily focused on

  3. A global inventory of small floating plastic debris

    NARCIS (Netherlands)

    Van Sebille, Erik; Wilcox, Chris; Lebreton, Laurent; Maximenko, Nikolai; Hardesty, Britta Denise; Van Franeker, Jan A.; Eriksen, Marcus; Siegel, David; Galgani, Francois; Law, Kara Lavender

    2015-01-01

    Microplastic debris floating at the ocean surface can harm marine life. Understanding the severity of this harm requires knowledge of plastic abundance and distributions. Dozens of expeditions measuring microplastics have been carried out since the 1970s, but they have primarily focused on the North

  4. Wave energy absorption by a floating air bag

    DEFF Research Database (Denmark)

    Kurniawan, Adi; Chaplin, John; Greaves, Deborah

    2017-01-01

    A floating air bag, ballasted in water, expands and contracts as it heaves under wave action. Connecting the bag to a secondary volume via a turbine transforms the bag into a device capable of generating useful energy from the waves. Small-scale measurements of the device reveal some interesting...

  5. associated injuries and complications in floating knee management

    African Journals Online (AJOL)

    Materials and Methods: The investigation lasted ten years from 1st January, 2000 to ... hemarthrosis, 2 paralysis of fibular nerve associated to a displaced fracture of neck of ... Keywords: Associated injuries, complications, Floating knee, Management ... Road traffic accidents were responsible for 51 cases ... cerebral injuries.

  6. Development of the floating sulphur biofilm reactor for sulphide ...

    African Journals Online (AJOL)

    Development of the floating sulphur biofilm reactor for sulphide oxidation in biological water treatment systems. ... The effect of influent sulphide concentrations, flow rate and reactor dimensions on the sulphur biofilm formation were investigated for the optimisation of elemental sulphur recovery and sulphide removal ...

  7. On Hydroelastic Body-Boundary Condition of Floating Structures

    DEFF Research Database (Denmark)

    Xia, Jinzhu

    1996-01-01

    A general linear body boundary condition of hydroelastic analysis of arbitrary shaped floating structures generalizes the classic kinematic rigid-body (Timman-Newman) boundary condition for seakeeping problems. The new boundary condition is consistent with the existing theories under certain...

  8. Experimental testing of moorings for large floating wave energy converters

    DEFF Research Database (Denmark)

    Thomsen, Jonas Bjerg; Ferri, Francesco; Kofoed, Jens Peter

    2016-01-01

    This paper presents the outcome of a test campaign, which investigates the behaviour of a synthetic mooring system applied to the Floating Power Plant wave energy converter. The study investigates the motion and tension response under operational and extreme sea states expected at the deployment ...

  9. An Asynchronous IEEE Floating-Point Arithmetic Unit

    Directory of Open Access Journals (Sweden)

    Joel R. Noche

    2007-12-01

    Full Text Available An asynchronous floating-point arithmetic unit is designed and tested at the transistor level usingCadence software. It uses CMOS (complementary metal oxide semiconductor and DCVS (differentialcascode voltage switch logic in a 0.35 µm process using a 3.3 V supply voltage, with dual-rail data andsingle-rail control signals using four-phase handshaking.Using 17,085 transistors, the unit handles single-precision (32-bit addition/subtraction, multiplication,division, and remainder using the IEEE 754-1985 Standard for Binary Floating-Point Arithmetic, withrounding and other operations to be handled by separate hardware or software. Division and remainderare done using a restoring subtractive algorithm; multiplication uses an additive algorithm. Exceptionsare noted by flags (and not trap handlers and the output is in single-precision.Previous work on asynchronous floating-point arithmetic units have mostly focused on single operationssuch as division. This is the first work to the authors' knowledge that can perform floating-point addition,multiplication, division, and remainder using a common datapath.

  10. Efficiency of a variable displacement open circuit floating cup pump

    NARCIS (Netherlands)

    Vael, G.E.M.; Achten, P.A.J.; Brink, van den T.L.

    2009-01-01

    The Floating Cup Displacement principle is a relatively new axial piston displacement principle for hydrostatic pumps, motors and transformers. Since its origin in 2001, it has been mainly applied in fixed displacement pump prototypes. At the SICFP’05, a design for a variable displacement open

  11. Fuzzy diagnosis of float-glass production furnace

    NARCIS (Netherlands)

    Spaanenburg, L; TerHaseborg, H; Nijhuis, JAG; Reusch, B

    1997-01-01

    The industrial production of high-quality float-glass is usually supervised by the single human expert. It is of interest to formalize his empirical knowledge to support the furnace operator at all times during the day. The paper describes the systematic development of a fuzzy expert with 6 blocks

  12. Development of the floating sulphur biofilm reactor for sulphide ...

    African Journals Online (AJOL)

    driniev

    The formation of floating sulphur biofilm was observed in the microbial ecology studies of tannery ponds undertaken by the. Environmental Biotechnology Group at Rhodes University. This was related to the steep Redox gradients established at the air/ water interface of anaerobic, organically loaded and actively sulphate ...

  13. Resident perceptions of the educational value of night float rotations.

    Science.gov (United States)

    Luks, Andrew M; Smith, C Scott; Robins, Lynne; Wipf, Joyce E

    2010-07-01

    Night float rotations are being increasingly used in the era of resident physician work-hour regulations, but their impact on resident education is not clear. Our objective was to clarify resident perceptions of the educational aspects of night float rotations. An anonymous survey of internal medicine residents at a university-based residency program was completed. Responses were received from 116 of 163 surveyed residents (71%). Residents attended less residents' report (0.10 +/- .43 vs. 2.70 + 0.93 sessions/week, peducational value of night float, sleep cycle adjustment issues, and impact on their personal lives, which correlated with resident evaluations from the regular program evaluation process. In free responses, residents commented that they liked the autonomy and opportunity to improve triage skills on these rotations and confirmed their negative opinions about the sleep-wake cycle and interference with personal lives. Internal medicine residents at a university-based program have negative opinions regarding the educational value of night float rotations. Further work is necessary to determine whether problems exist across programs and specialties.

  14. Power Dissipation Challenges in Multicore Floating-Point Units

    DEFF Research Database (Denmark)

    Liu, Wei; Nannarelli, Alberto

    2010-01-01

    , we analyze the impact of power dissipation in floating-point (FP) units and we consider different alternatives in the implementation of FP-division that lead to substantial energy savings. We compare the implementation of division in a Fused Multiply-Add (FMA) unit based on the Newton-Raphson...

  15. Life cycle assessment of a floating offshore wind turbine

    Energy Technology Data Exchange (ETDEWEB)

    Weinzettel, Jan [Department of Electrotechnology, Faculty of Electrical Engineering, Czech Technical University in Prague, Technicka 2, Praha 166 27 (Czech Republic); Charles University in Prague Environment Center, U Krize 8, Prague 158 00 (Czech Republic); Reenaas, Marte; Solli, Christian [Industrial Ecology Programme, Norwegian University of Science and Technology (NTNU), 7491 Trondheim (Norway); Hertwich, Edgar G. [Industrial Ecology Programme, Norwegian University of Science and Technology (NTNU), 7491 Trondheim (Norway); Department of Energy and Process Engineering, Norwegian University of Science and Technology (NTNU), 7491 Trondheim (Norway)

    2009-03-15

    A development in wind energy technology towards higher nominal power of the wind turbines is related to the shift of the turbines to better wind conditions. After the shift from onshore to offshore areas, there has been an effort to move further from the sea coast to the deep water areas, which requires floating windmills. Such a concept brings additional environmental impact through higher material demand. To evaluate additional environmental burdens and to find out whether they can be rebalanced or even offset by better wind conditions, a prospective life cycle assessment (LCA) study of one floating concept has been performed and the results are presented in this paper. A comparison with existing LCA studies of conventional offshore wind power and electricity from a natural gas combined cycle is presented. The results indicate similar environmental impacts of electricity production using floating wind power plants as using non-floating offshore wind power plants. The most important stage in the life cycle of the wind power plants is the production of materials. Credits that are connected to recycling these materials at the end-of-life of the power plant are substantial. (author)

  16. Design Optimization and Evaluation of Gastric Floating Matrix Tablet ...

    African Journals Online (AJOL)

    HP

    Abstract. Purpose: To formulate an optimized gastric floating drug delivery system (GFDDS) containing glipizide ... Index Medicus, JournalSeek, Journal Citation Reports/Science Edition, Directory of Open Access Journals ... Sodium bicarbonate by geometric mixing then .... order polynomial equation (Eq 4) with added.

  17. Observation of floating potential asymmetry in the edge plasma of ...

    Indian Academy of Sciences (India)

    Floating potential; vertical magnetic field; vertical electric field reversal; vertical electric field reversal ... Similar exchange of behavior for bottom probe of figure 1 with top probe of ... In our case rate of rise of plasma currents and also the total ...

  18. Udpegning af potentielle sorte pletter via floating car data

    DEFF Research Database (Denmark)

    Splid Svendsen, Martin; Tradisauskas, Nerius; Lahrmann, Harry

    2008-01-01

    Formålet med dette paper er at undersøge, om det er muligt at udpege potentielle sorte pletter via floating car data. Der er i projektet udført teoretiske litteraturstudier for at skabe et grundlag for det senere analysearbejde, som danner baggrund for analysearbejdet. Dataene stammer fra Aalborg...

  19. Page | 155 FLOATING CHARGE: A CHILD OF EQUITABLE ...

    African Journals Online (AJOL)

    Fr. Ikenga

    a floating charge is a security (that is mortgage, lien etc) that has an underlying ..... former were entitled to intervene and enforce their rights under the charge. .... Bridgend County Borough Council (2002) 1 AC 336; 352; and Tompkins J in ...

  20. A floating trap for sampling downstream migrant fishes.

    Science.gov (United States)

    Carl E. McLemore; Fred H. Everest; William R. Humphreys; Mario F. Solazzi

    1989-01-01

    Fishery scientists and managers are interested in obtaining information about downstream movements of fish species for biological and economic reasons. Different types of nets and traps have been used for this purpose with only partial success. The floating, self-cleaning downstream migrant trap described here proved successful for sampling several salmoniform and...

  1. Ranitidine Loaded Biopolymer Floats: Designing, Characterization, and Evaluation

    Directory of Open Access Journals (Sweden)

    Abdul Karim

    2017-01-01

    Full Text Available The float formulation is a strategy to improve the bioavailability of drugs by gastroretentive drug delivery system (GRDDS. A drug delivery model based on swellable and reswellable low density biopolymers has been designed to evaluate its drug release profile using ranitidine (RNT as a model drug and formulations have been prepared utilizing 32 factorial designs. The drug release (DR data has been subjected to various kinetic models to investigate the DR mechanism. A reduction in rate has been observed by expanding the amounts of PSG and LSG parts, while an expansion has been noted by increasing the concentration of tragacanth (TG and citric acid (CA with an increment in floating time. The stearic acid (SA has been used to decrease the lag time because a decrease in density of system was observed. The kinetic analysis showed that the optimized formulation (S4F3 followed zero-order kinetics and power law was found to be best fitted due to its minimum lag time and maximum floating ability. The resemblance of observed and predicted values indicated the validity of derived equations for evaluating the effect of independent variables while kinetic study demonstrated that the applied models are feasible for evaluating and developing float for RNT.

  2. Formulation and Evaluation of Gastro-retentive Floating Multi ...

    African Journals Online (AJOL)

    Purpose: To develop a floating multiparticulate unit system for metoprolol tartarate, using a porous carrier, with an outcome for delayed gastric emptying. Methods: Dried microparticles of metoprolol tartarate were prepared by solvent evaporation using Eudragit® RS-PO, polypropylene foam powder, and dichloromethane as ...

  3. The floating knee: epidemiology, prognostic indicators & outcome following surgical management.

    Science.gov (United States)

    Rethnam, Ulfin; Yesupalan, Rajam S; Nair, Rajagopalan

    2007-11-26

    Floating Knee injuries are complex injuries. The type of fractures, soft tissue and associated injuries make this a challenging problem to manage. We present the outcome of these injuries after surgical management. 29 patients with floating knee injuries were managed over a 3 year period. This was a prospective study were both fractures of the floating knee injury were surgically fixed using different modalities. The associated injuries were managed appropriately. Assessment of the end result was done by the Karlstrom criteria after bony union. The mechanism of injury was road traffic accident in 27/29 patients. There were 38 associated injuries. 20/29 patients had intramedullary nailing for both fractures. The complications were knee stiffness, foot drop, delayed union of tibia and superficial infection. The bony union time ranged from 15 - 22.5 weeks for femur fractures and 17 - 28 weeks for the tibia. According to the Karlstrom criteria the end results were Excellent - 15, Good - 11, Acceptable - 1 and Poor - 3. The associated injuries and the type of fracture (open, intra-articular, comminution) are prognostic indicators in the Floating knee. Appropriate management of the associated injuries, intramedullary nailing of both the fractures and post operative rehabilitation are necessary for good final outcome.

  4. Charging free floating shared cars in metropolitan areas

    NARCIS (Netherlands)

    van der Poel, Gijs; Tensen, Tim; van Goeverden, Tom; van den Hoed, Robert

    2017-01-01

    This paper analyses the effect of two new developments: electrification and ‘free floating’ car sharing and their impact on public space. Contrary to station based shared cars, free floating cars do not have dedicated parking or charging stations. They therefore park at public parking spots and

  5. Voltage-Gated Calcium Channels

    Science.gov (United States)

    Zamponi, Gerald Werner

    Voltage Gated Calcium Channels is the first comprehensive book in the calcium channel field, encompassing over thirty years of progress towards our understanding of calcium channel structure, function, regulation, physiology, pharmacology, and genetics. This book balances contributions from many of the leading authorities in the calcium channel field with fresh perspectives from risings stars in the area, taking into account the most recent literature and concepts. This is the only all-encompassing calcium channel book currently available, and is an essential resource for academic researchers at all levels in the areas neuroscience, biophysics, and cardiovascular sciences, as well as to researchers in the drug discovery area.

  6. Cognitive memory.

    Science.gov (United States)

    Widrow, Bernard; Aragon, Juan Carlos

    2013-05-01

    Regarding the workings of the human mind, memory and pattern recognition seem to be intertwined. You generally do not have one without the other. Taking inspiration from life experience, a new form of computer memory has been devised. Certain conjectures about human memory are keys to the central idea. The design of a practical and useful "cognitive" memory system is contemplated, a memory system that may also serve as a model for many aspects of human memory. The new memory does not function like a computer memory where specific data is stored in specific numbered registers and retrieval is done by reading the contents of the specified memory register, or done by matching key words as with a document search. Incoming sensory data would be stored at the next available empty memory location, and indeed could be stored redundantly at several empty locations. The stored sensory data would neither have key words nor would it be located in known or specified memory locations. Sensory inputs concerning a single object or subject are stored together as patterns in a single "file folder" or "memory folder". When the contents of the folder are retrieved, sights, sounds, tactile feel, smell, etc., are obtained all at the same time. Retrieval would be initiated by a query or a prompt signal from a current set of sensory inputs or patterns. A search through the memory would be made to locate stored data that correlates with or relates to the prompt input. The search would be done by a retrieval system whose first stage makes use of autoassociative artificial neural networks and whose second stage relies on exhaustive search. Applications of cognitive memory systems have been made to visual aircraft identification, aircraft navigation, and human facial recognition. Concerning human memory, reasons are given why it is unlikely that long-term memory is stored in the synapses of the brain's neural networks. Reasons are given suggesting that long-term memory is stored in DNA or RNA

  7. Biogeochemical sensor performance in the SOCCOM profiling float array

    Science.gov (United States)

    Johnson, Kenneth S.; Plant, Joshua N.; Coletti, Luke J.; Jannasch, Hans W.; Sakamoto, Carole M.; Riser, Stephen C.; Swift, Dana D.; Williams, Nancy L.; Boss, Emmanuel; Haëntjens, Nils; Talley, Lynne D.; Sarmiento, Jorge L.

    2017-08-01

    The Southern Ocean Carbon and Climate Observations and Modeling (SOCCOM) program has begun deploying a large array of biogeochemical sensors on profiling floats in the Southern Ocean. As of February 2016, 86 floats have been deployed. Here the focus is on 56 floats with quality-controlled and adjusted data that have been in the water at least 6 months. The floats carry oxygen, nitrate, pH, chlorophyll fluorescence, and optical backscatter sensors. The raw data generated by these sensors can suffer from inaccurate initial calibrations and from sensor drift over time. Procedures to correct the data are defined. The initial accuracy of the adjusted concentrations is assessed by comparing the corrected data to laboratory measurements made on samples collected by a hydrographic cast with a rosette sampler at the float deployment station. The long-term accuracy of the corrected data is compared to the GLODAPv2 data set whenever a float made a profile within 20 km of a GLODAPv2 station. Based on these assessments, the fleet average oxygen data are accurate to 1 ± 1%, nitrate to within 0.5 ± 0.5 µmol kg-1, and pH to 0.005 ± 0.007, where the error limit is 1 standard deviation of the fleet data. The bio-optical measurements of chlorophyll fluorescence and optical backscatter are used to estimate chlorophyll a and particulate organic carbon concentration. The particulate organic carbon concentrations inferred from optical backscatter appear accurate to with 35 mg C m-3 or 20%, whichever is larger. Factors affecting the accuracy of the estimated chlorophyll a concentrations are evaluated.Plain Language SummaryThe ocean science community must move toward greater use of autonomous platforms and sensors if we are to extend our knowledge of the effects of climate driven change within the ocean. Essential to this shift in observing strategies is an understanding of the performance that can be obtained from biogeochemical sensors on platforms deployed for years and the

  8. Gate current for p+-poly PMOS devices under gate injection conditions

    NARCIS (Netherlands)

    Hof, A.J.; Holleman, J.; Woerlee, P.H.

    2001-01-01

    In current CMOS processing both n+-poly and p+-poly gates are used. The I-V –relationship and reliability of n+-poly devices are widely studied and well understood. Gate currents and reliability for p+-poly PMOS devices under gate injection conditions are not well understood. In this paper, the

  9. Memory Modulation

    NARCIS (Netherlands)

    Roozendaal, Benno; McGaugh, James L.

    2011-01-01

    Our memories are not all created equally strong: Some experiences are well remembered while others are remembered poorly, if at all. Research on memory modulation investigates the neurobiological processes and systems that contribute to such differences in the strength of our memories. Extensive

  10. A VLSI recurrent network of integrate-and-fire neurons connected by plastic synapses with long-term memory.

    Science.gov (United States)

    Chicca, E; Badoni, D; Dante, V; D'Andreagiovanni, M; Salina, G; Carota, L; Fusi, S; Del Giudice, P

    2003-01-01

    Electronic neuromorphic devices with on-chip, on-line learning should be able to modify quickly the synaptic couplings to acquire information about new patterns to be stored (synaptic plasticity) and, at the same time, preserve this information on very long time scales (synaptic stability). Here, we illustrate the electronic implementation of a simple solution to this stability-plasticity problem, recently proposed and studied in various contexts. It is based on the observation that reducing the analog depth of the synapses to the extreme (bistable synapses) does not necessarily disrupt the performance of the device as an associative memory, provided that 1) the number of neurons is large enough; 2) the transitions between stable synaptic states are stochastic; and 3) learning is slow. The drastic reduction of the analog depth of the synaptic variable also makes this solution appealing from the point of view of electronic implementation and offers a simple methodological alternative to the technological solution based on floating gates. We describe the full custom analog very large-scale integration (VLSI) realization of a small network of integrate-and-fire neurons connected by bistable deterministic plastic synapses which can implement the idea of stochastic learning. In the absence of stimuli, the memory is preserved indefinitely. During the stimulation the synapse undergoes quick temporary changes through the activities of the pre- and postsynaptic neurons; those changes stochastically result in a long-term modification of the synaptic efficacy. The intentionally disordered pattern of connectivity allows the system to generate a randomness suited to drive the stochastic selection mechanism. We check by a suitable stimulation protocol that the stochastic synaptic plasticity produces the expected pattern of potentiation and depression in the electronic network.

  11. Memory Dysfunction

    Science.gov (United States)

    Matthews, Brandy R.

    2015-01-01

    Purpose of Review: This article highlights the dissociable human memory systems of episodic, semantic, and procedural memory in the context of neurologic illnesses known to adversely affect specific neuroanatomic structures relevant to each memory system. Recent Findings: Advances in functional neuroimaging and refinement of neuropsychological and bedside assessment tools continue to support a model of multiple memory systems that are distinct yet complementary and to support the potential for one system to be engaged as a compensatory strategy when a counterpart system fails. Summary: Episodic memory, the ability to recall personal episodes, is the subtype of memory most often perceived as dysfunctional by patients and informants. Medial temporal lobe structures, especially the hippocampal formation and associated cortical and subcortical structures, are most often associated with episodic memory loss. Episodic memory dysfunction may present acutely, as in concussion; transiently, as in transient global amnesia (TGA); subacutely, as in thiamine deficiency; or chronically, as in Alzheimer disease. Semantic memory refers to acquired knowledge about the world. Anterior and inferior temporal lobe structures are most often associated with semantic memory loss. The semantic variant of primary progressive aphasia (svPPA) is the paradigmatic disorder resulting in predominant semantic memory dysfunction. Working memory, associated with frontal lobe function, is the active maintenance of information in the mind that can be potentially manipulated to complete goal-directed tasks. Procedural memory, the ability to learn skills that become automatic, involves the basal ganglia, cerebellum, and supplementary motor cortex. Parkinson disease and related disorders result in procedural memory deficits. Most memory concerns warrant bedside cognitive or neuropsychological evaluation and neuroimaging to assess for specific neuropathologies and guide treatment. PMID:26039844

  12. The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET.

    Science.gov (United States)

    Li, Wei; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Wang, Qianqiong

    2017-09-06

    The larger volume of capacitor and higher leakage current of transistor have become the inherent disadvantages for the traditional one transistor (1T)-one capacitor (1C) dynamic random access memory (DRAM). Recently, the tunneling FET (TFET) is applied in DRAM cell due to the low off-state current and high switching ratio. The dual-gate TFET (DG-TFET) DRAM cell with the capacitorless structure has the superior performance-higher retention time (RT) and weak temperature dependence. But the performance of TFET DRAM cell is sensitive to programming condition. In this paper, the guideline of programming optimization is discussed in detail by using simulation tool-Silvaco Atlas. Both the writing and reading operations of DG-TFET DRAM depend on the band-to-band tunneling (BTBT). During the writing operation, the holes coming from BTBT governed by Gate2 are stored in potential well under Gate2. A small negative voltage is applied at Gate2 to retain holes for a long time during holding "1". The BTBT governed by Gate1 mainly influences the reading current. Using the optimized programming condition, the DG-TFET DRAM obtains the higher current ratio of reading "1" to reading "0" (10 7 ) and RT of more than 2 s. The higher RT reduces the refresh rate and dynamic power consumption of DRAM.

  13. The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET

    Science.gov (United States)

    Li, Wei; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Wang, Qianqiong

    2017-09-01

    The larger volume of capacitor and higher leakage current of transistor have become the inherent disadvantages for the traditional one transistor (1T)-one capacitor (1C) dynamic random access memory (DRAM). Recently, the tunneling FET (TFET) is applied in DRAM cell due to the low off-state current and high switching ratio. The dual-gate TFET (DG-TFET) DRAM cell with the capacitorless structure has the superior performance-higher retention time (RT) and weak temperature dependence. But the performance of TFET DRAM cell is sensitive to programming condition. In this paper, the guideline of programming optimization is discussed in detail by using simulation tool—Silvaco Atlas. Both the writing and reading operations of DG-TFET DRAM depend on the band-to-band tunneling (BTBT). During the writing operation, the holes coming from BTBT governed by Gate2 are stored in potential well under Gate2. A small negative voltage is applied at Gate2 to retain holes for a long time during holding "1". The BTBT governed by Gate1 mainly influences the reading current. Using the optimized programming condition, the DG-TFET DRAM obtains the higher current ratio of reading "1" to reading "0" (107) and RT of more than 2 s. The higher RT reduces the refresh rate and dynamic power consumption of DRAM.

  14. Sleep extension normalizes ERP of waking auditory sensory gating in healthy habitually short sleeping individuals.

    Science.gov (United States)

    Gumenyuk, Valentina; Korzyukov, Oleg; Roth, Thomas; Bowyer, Susan M; Drake, Christopher L

    2013-01-01

    Chronic sleep loss has been associated with increased daytime sleepiness, as well as impairments in memory and attentional processes. In the present study, we evaluated the neuronal changes of a pre-attentive process of wake auditory sensory gating, measured by brain event-related potential (ERP)--P50 in eight normal sleepers (NS) (habitual total sleep time (TST) 7 h 32 m) vs. eight chronic short sleeping individuals (SS) (habitual TST ≤6 h). To evaluate the effect of sleep extension on sensory gating, the extended sleep condition was performed in chronic short sleeping individuals. Thus, one week of time in bed (6 h 11 m) corresponding to habitual short sleep (hSS), and one week of extended time (∼ 8 h 25 m) in bed corresponding to extended sleep (eSS), were counterbalanced in the SS group. The gating ERP assessment was performed on the last day after each sleep condition week (normal sleep and habitual short and extended sleep), and was separated by one week with habitual total sleep time and monitored by a sleep diary. We found that amplitude of gating was lower in SS group compared to that in NS group (0.3 µV vs. 1.2 µV, at Cz electrode respectively). The results of the group × laterality interaction showed that the reduction of gating amplitude in the SS group was due to lower amplitude over the left hemisphere and central-midline sites relative to that in the NS group. After sleep extension the amplitude of gating increased in chronic short sleeping individuals relative to their habitual short sleep condition. The sleep condition × frontality interaction analysis confirmed that sleep extension significantly increased the amplitude of gating over frontal and central brain areas compared to parietal brain areas.

  15. Sleep extension normalizes ERP of waking auditory sensory gating in healthy habitually short sleeping individuals.

    Directory of Open Access Journals (Sweden)

    Valentina Gumenyuk

    Full Text Available Chronic sleep loss has been associated with increased daytime sleepiness, as well as impairments in memory and attentional processes. In the present study, we evaluated the neuronal changes of a pre-attentive process of wake auditory sensory gating, measured by brain event-related potential (ERP--P50 in eight normal sleepers (NS (habitual total sleep time (TST 7 h 32 m vs. eight chronic short sleeping individuals (SS (habitual TST ≤6 h. To evaluate the effect of sleep extension on sensory gating, the extended sleep condition was performed in chronic short sleeping individuals. Thus, one week of time in bed (6 h 11 m corresponding to habitual short sleep (hSS, and one week of extended time (∼ 8 h 25 m in bed corresponding to extended sleep (eSS, were counterbalanced in the SS group. The gating ERP assessment was performed on the last day after each sleep condition week (normal sleep and habitual short and extended sleep, and was separated by one week with habitual total sleep time and monitored by a sleep diary. We found that amplitude of gating was lower in SS group compared to that in NS group (0.3 µV vs. 1.2 µV, at Cz electrode respectively. The results of the group × laterality interaction showed that the reduction of gating amplitude in the SS group was due to lower amplitude over the left hemisphere and central-midline sites relative to that in the NS group. After sleep extension the amplitude of gating increased in chronic short sleeping individuals relative to their habitual short sleep condition. The sleep condition × frontality interaction analysis confirmed that sleep extension significantly increased the amplitude of gating over frontal and central brain areas compared to parietal brain areas.

  16. Transparently wrap-gated semiconductor nanowire arrays for studies of gate-controlled photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Nylund, Gustav; Storm, Kristian; Torstensson, Henrik; Wallentin, Jesper; Borgström, Magnus T.; Hessman, Dan; Samuelson, Lars [Solid State Physics, Nanometer Structure Consortium, Lund University, Box 118, S-221 00 Lund (Sweden)

    2013-12-04

    We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.

  17. Formulation, release characteristics, and bioavailability study of gastroretentive floating matrix tablet and floating raft system of Mebeverine HCl.

    Science.gov (United States)

    El Nabarawi, Mohamed A; Teaima, Mahmoud H; Abd El-Monem, Rehab A; El Nabarawy, Nagla A; Gaber, Dalia A

    2017-01-01

    To prolong the residence time of dosage forms within the gastrointestinal tract until all drug is released at the desired rate is one of the real challenges for oral controlled-release drug delivery systems. This study was designed to develop a controlled-release floating matrix tablet and floating raft system of Mebeverine HCl (MbH) and evaluate different excipients for their floating behavior and in vitro controlled-release profiles. Oral pharmacokinetics of the optimum matrix tablet, raft system formula, and marketed Duspatalin ® 200 mg retard as reference were studied in beagle dogs. The optimized tablet formula (FT-10) and raft system formula (FRS-11) were found to float within 34±5 sec and 15±7 sec, respectively, and both remain buoyant over a period of 12 h in simulated gastric fluid. FT-10 (Compritol/HPMC K100M 1:1) showed the slowest drug release among all prepared tablet formulations, releasing about 80.2% of MbH over 8 h. In contrast, FRS-11 (Sodium alginate 3%/HPMC K100M 1%/Precirol 2%) had the greatest retardation, providing sustained release of 82.1% within 8 h. Compared with the marketed MbH product, the C max of FT-10 was almost the same, while FRS-11 maximum concentration was higher. The t max was 3.33, 2.167, and 3.0 h for marketed MbH product, FT-10, and FRS-11, respectively. In addition, the oral bioavailability experiment showed that the relative bioavailability of the MbH was 104.76 and 116.01% after oral administration of FT-10 and FRS-11, respectively, compared to marketed product. These results demonstrated that both controlled-released floating matrix tablet and raft system would be promising gastroretentive delivery systems for prolonging drug action.

  18. Protected gates for topological quantum field theories

    International Nuclear Information System (INIS)

    Beverland, Michael E.; Pastawski, Fernando; Preskill, John; Buerschaper, Oliver; Koenig, Robert; Sijher, Sumit

    2016-01-01

    We study restrictions on locality-preserving unitary logical gates for topological quantum codes in two spatial dimensions. A locality-preserving operation is one which maps local operators to local operators — for example, a constant-depth quantum circuit of geometrically local gates, or evolution for a constant time governed by a geometrically local bounded-strength Hamiltonian. Locality-preserving logical gates of topological codes are intrinsically fault tolerant because spatially localized errors remain localized, and hence sufficiently dilute errors remain correctable. By invoking general properties of two-dimensional topological field theories, we find that the locality-preserving logical gates are severely limited for codes which admit non-abelian anyons, in particular, there are no locality-preserving logical gates on the torus or the sphere with M punctures if the braiding of anyons is computationally universal. Furthermore, for Ising anyons on the M-punctured sphere, locality-preserving gates must be elements of the logical Pauli group. We derive these results by relating logical gates of a topological code to automorphisms of the Verlinde algebra of the corresponding anyon model, and by requiring the logical gates to be compatible with basis changes in the logical Hilbert space arising from local F-moves and the mapping class group

  19. Gates Auto Door Car With Lights Modulated

    OpenAIRE

    Lina Carolina; Luyung Dinani, Skom, MMSi

    2002-01-01

    In scientific writing wi ll be explained about automatic gates with modulated headlights, where to find the car lights were adjusted by the relative frequency darker because of this background that the author alleviate human task in performing daily activities by using an automatic gate with the car lights modulated.

  20. Automatically closing swing gate closure assembly

    Science.gov (United States)

    Chang, Shih-Chih; Schuck, William J.; Gilmore, Richard F.

    1988-01-01

    A swing gate closure assembly for nuclear reactor tipoff assembly wherein the swing gate is cammed open by a fuel element or spacer but is reliably closed at a desired closing rate primarily by hydraulic forces in the absence of a fuel charge.

  1. Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices

    Science.gov (United States)

    Yu, Jie; Chen, Kun-ji; Ma, Zhong-yuan; Zhang, Xin-xin; Jiang, Xiao-fan; Wu, Yang-qing; Huang, Xin-fan; Oda, Shunri

    2016-09-01

    Based on the charge storage mode, it is important to investigate the scaling dependence of memory performance in silicon nanocrystal (Si-NC) nonvolatile memory (NVM) devices for its scaling down limit. In this work, we made eight kinds of test key cells with different gate widths and lengths by 0.13-μm node complementary metal oxide semiconductor (CMOS) technology. It is found that the memory windows of eight kinds of test key cells are almost the same of about 1.64 V @ ± 7 V/1 ms, which are independent of the gate area, but mainly determined by the average size (12 nm) and areal density (1.8 × 1011/cm2) of Si-NCs. The program/erase (P/E) speed characteristics are almost independent of gate widths and lengths. However, the erase speed is faster than the program speed of test key cells, which is due to the different charging behaviors between electrons and holes during the operation processes. Furthermore, the data retention characteristic is also independent of the gate area. Our findings are useful for further scaling down of Si-NC NVM devices to improve the performance and on-chip integration. Project supported by the State Key Development Program for Basic Research of China (Grant No. 2010CB934402) and the National Natural Science Foundation of China (Grant Nos. 11374153, 61571221, and 61071008).

  2. Multi-gated field emitters for a micro-column

    International Nuclear Information System (INIS)

    Mimura, Hidenori; Kioke, Akifumi; Aoki, Toru; Neo, Yoichiro; Yoshida, Tomoya; Nagao, Masayoshi

    2011-01-01

    We have developed a multi-gated field emitter (FE) such as a quadruple-gated FE with a three-stacked electrode lens and a quintuple-gated FE with a four-stacked electrode lens. Both the FEs can focus the electron beam. However, the quintuple-gated FE has a stronger electron convergence than the quadruple-gated FE, and a beam crossover is clearly observed for the quintuple-gated FE.

  3. Declarative memory.

    Science.gov (United States)

    Riedel, Wim J; Blokland, Arjan

    2015-01-01

    Declarative Memory consists of memory for events (episodic memory) and facts (semantic memory). Methods to test declarative memory are key in investigating effects of potential cognition-enhancing substances--medicinal drugs or nutrients. A number of cognitive performance tests assessing declarative episodic memory tapping verbal learning, logical memory, pattern recognition memory, and paired associates learning are described. These tests have been used as outcome variables in 34 studies in humans that have been described in the literature in the past 10 years. Also, the use of episodic tests in animal research is discussed also in relation to the drug effects in these tasks. The results show that nutritional supplementation of polyunsaturated fatty acids has been investigated most abundantly and, in a number of cases, but not all, show indications of positive effects on declarative memory, more so in elderly than in young subjects. Studies investigating effects of registered anti-Alzheimer drugs, cholinesterase inhibitors in mild cognitive impairment, show positive and negative effects on declarative memory. Studies mainly carried out in healthy volunteers investigating the effects of acute dopamine stimulation indicate enhanced memory consolidation as manifested specifically by better delayed recall, especially at time points long after learning and more so when drug is administered after learning and if word lists are longer. The animal studies reveal a different picture with respect to the effects of different drugs on memory performance. This suggests that at least for episodic memory tasks, the translational value is rather poor. For the human studies, detailed parameters of the compositions of word lists for declarative memory tests are discussed and it is concluded that tailored adaptations of tests to fit the hypothesis under study, rather than "off-the-shelf" use of existing tests, are recommended.

  4. Top-gate pentacene-based organic field-effect transistor with amorphous rubrene gate insulator

    Science.gov (United States)

    Hiroki, Mizuha; Maeda, Yasutaka; Ohmi, Shun-ichiro

    2018-02-01

    The scaling of organic field-effect transistors (OFETs) is necessary for high-density integration and for this, OFETs with a top-gate configuration are required. There have been several reports of damageless lithography processes for organic semiconductor or insulator layers. However, it is still difficult to fabricate scaled OFETs with a top-gate configuration. In this study, the lift-off process and the device characteristics of the OFETs with a top-gate configuration utilizing an amorphous (α) rubrene gate insulator were investigated. We have confirmed that α-rubrene shows an insulating property, and its extracted linear mobility was 2.5 × 10-2 cm2/(V·s). The gate length and width were 10 and 60 µm, respectively. From these results, the OFET with a top-gate configuration utilizing an α-rubrene gate insulator is promising for the high-density integration of scaled OFETs.

  5. Precise linear gating circuit on integrated microcircuits

    Energy Technology Data Exchange (ETDEWEB)

    Butskii, V.V.; Vetokhin, S.S.; Reznikov, I.V.

    Precise linear gating circuit on four microcircuits is described. A basic flowsheet of the gating circuit is given. The gating circuit consists of two input differential cascades total load of which is two current followers possessing low input and high output resistances. Follower outlets are connected to high ohmic dynamic load formed with a current source which permits to get high amplification (>1000) at one cascade. Nonlinearity amounts to <0.1% in the range of input signal amplitudes of -10-+10 V. Front duration for an output signal with 10 V amplitude amounts to 100 ns. Attenuation of input signal with a closed gating circuit is 60 db. The gating circuits described is used in the device intended for processing of scintillation sensor signals.

  6. Quantum memory Quantum memory

    Science.gov (United States)

    Le Gouët, Jean-Louis; Moiseev, Sergey

    2012-06-01

    Interaction of quantum radiation with multi-particle ensembles has sparked off intense research efforts during the past decade. Emblematic of this field is the quantum memory scheme, where a quantum state of light is mapped onto an ensemble of atoms and then recovered in its original shape. While opening new access to the basics of light-atom interaction, quantum memory also appears as a key element for information processing applications, such as linear optics quantum computation and long-distance quantum communication via quantum repeaters. Not surprisingly, it is far from trivial to practically recover a stored quantum state of light and, although impressive progress has already been accomplished, researchers are still struggling to reach this ambitious objective. This special issue provides an account of the state-of-the-art in a fast-moving research area that makes physicists, engineers and chemists work together at the forefront of their discipline, involving quantum fields and atoms in different media, magnetic resonance techniques and material science. Various strategies have been considered to store and retrieve quantum light. The explored designs belong to three main—while still overlapping—classes. In architectures derived from photon echo, information is mapped over the spectral components of inhomogeneously broadened absorption bands, such as those encountered in rare earth ion doped crystals and atomic gases in external gradient magnetic field. Protocols based on electromagnetic induced transparency also rely on resonant excitation and are ideally suited to the homogeneous absorption lines offered by laser cooled atomic clouds or ion Coulomb crystals. Finally off-resonance approaches are illustrated by Faraday and Raman processes. Coupling with an optical cavity may enhance the storage process, even for negligibly small atom number. Multiple scattering is also proposed as a way to enlarge the quantum interaction distance of light with matter. The

  7. A 32-bit computer for large memory applications on the FASTBUS

    International Nuclear Information System (INIS)

    Kellner, R.; Blossom, J.M.; Hung, J.P.

    1985-01-01

    A FASTBUS based 32-bit computer is being built at Los Alamos National Laboratory for use in systems requiring large fast memory in the FASTBUS environment. A separate local execution bus allows data reduction to proceed concurrently with other FASTBUS operations. The computer, which can operate in either master or slave mode, includes the National Semiconductor NS32032 chip set with demand paged memory management, floating point slave processor, interrupt control unit, timers, and time-of-day clock. The 16.0 megabytes of random access memory are interleaved to allow windowed direct memory access on and off the FASTBUS at 80 megabytes per second

  8. Are the older ARGO-Floats more vulnerable to Fouling and Associated Salinity drift compared to that of later deployments?

    Digital Repository Service at National Institute of Oceanography (India)

    Pankajakshan, T.; Youn, Y.H.; Lee, H.

    in different years Floats deployed in the East/Japan Sea and in the Indian Ocean are examined to find out float-to-float match-ups in such a way that an older float pops up simultaneously with a newer deployment (with tolerable space-time difference) A time...

  9. Active pixel sensor pixel having a photodetector whose output is coupled to an output transistor gate

    Science.gov (United States)

    Fossum, Eric R. (Inventor); Nakamura, Junichi (Inventor); Kemeny, Sabrina E. (Inventor)

    2005-01-01

    An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. A Simple Floating Gate (SFG) pixel structure could also be employed in the imager to provide a non-destructive readout and smaller pixel sizes.

  10. Materials Fundamentals of Gate Dielectrics

    CERN Document Server

    Demkov, Alexander A

    2006-01-01

    This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discont...

  11. Sleep disturbances in voltage-gated potassium channel antibody syndrome.

    Science.gov (United States)

    Barone, Daniel A; Krieger, Ana C

    2016-05-01

    Voltage-gated potassium channels (VGKCs) are a family of membrane proteins responsible for controlling cell membrane potential. The presence of antibodies (Ab) against neuronal VGKC complexes aids in the diagnosis of idiopathic and paraneoplastic autoimmune neurologic disorders. The diagnosis of VGKC Ab-associated encephalopathy (VCKC Ab syndrome) should be suspected in patients with subacute onset of disorientation, confusion, and memory loss in the presence of seizures or a movement disorder. VGKC Ab syndrome may present with sleep-related symptoms, and the purpose of this communication is to alert sleep and neurology clinicians of this still-under-recognized condition. In this case, we are presenting the VGKC Ab syndrome which improved after treatment with solumedrol. The prompt recognition and treatment of this condition may prevent the morbidity associated with cerebral atrophy and the mortality associated with intractable seizures and electrolyte disturbances. Copyright © 2016. Published by Elsevier B.V.

  12. Free-floating magnetic microstructures by mask photolithography

    Science.gov (United States)

    Huong Au, Thi; Thien Trinh, Duc; Bich Do, Danh; Phu Nguyen, Dang; Cong Tong, Quang; Diep Lai, Ngoc

    2018-03-01

    This work explores the fabrication of free-floating magnetic structures on a photocurable nanocomposite consisting of superparamagnetic magnetite nanoparticles (Fe3O4) and a commercial SU-8 negative tone photoresist. The nanocomposite was synthesized by mixing magnetic nanoparticles with different kinds of SU-8 resin. We demonstrated that the dispersion of Fe3O4 nanoparticles in nanocomposite solution strongly depended on the particles concentration, the viscosity of SU-8 polymer, and the mixing time. The influence of these factors was demonstrated by examining the structures fabricated by mask photolithography technique. We obtained the best quality of structures at a low concentration, below 5 wt%, of Fe3O4 nanoparticles in SU-8 2005 photoresist for a mixing time of about 20 days. The manipulation of free-floating magnetic microstructures by an external magnetic field was also demonstrated showing promising applications of this magnetic nanocomposite.

  13. Predicting vehicle fuel consumption patterns using floating vehicle data.

    Science.gov (United States)

    Du, Yiman; Wu, Jianping; Yang, Senyan; Zhou, Liutong

    2017-09-01

    The status of energy consumption and air pollution in China is serious. It is important to analyze and predict the different fuel consumption of various types of vehicles under different influence factors. In order to fully describe the relationship between fuel consumption and the impact factors, massive amounts of floating vehicle data were used. The fuel consumption pattern and congestion pattern based on large samples of historical floating vehicle data were explored, drivers' information and vehicles' parameters from different group classification were probed, and the average velocity and average fuel consumption in the temporal dimension and spatial dimension were analyzed respectively. The fuel consumption forecasting model was established by using a Back Propagation Neural Network. Part of the sample set was used to train the forecasting model and the remaining part of the sample set was used as input to the forecasting model. Copyright © 2017. Published by Elsevier B.V.

  14. What is the size of a floating sheath? An answer

    Science.gov (United States)

    Voigt, Farina; Naggary, Schabnam; Brinkmann, Ralf Peter

    2016-09-01

    The formation of a non-neutral boundary sheath in front of material surfaces is universal plasma phenomenon. Despite several decades of research, however, not all related issues are fully clarified. In a recent paper, Chabert pointed out that this lack of clarity applies even to the seemingly innocuous question ``What the size of a floating sheath?'' This contribution attempts to provide an answer that is not arbitrary: The size of a floating sheath is defined as the plate separation of an equivalent parallel plate capacitor. The consequences of the definition are explored with the help of a self-consistent sheath model, and a comparison is made with other sheath size definitions. Deutsche Forschungsgemeinschaft within SFB TR 87.

  15. A flexible capacitive tactile sensing array with floating electrodes

    International Nuclear Information System (INIS)

    Cheng, M-Y; Huang, X-H; Ma, C-W; Yang, Y-J

    2009-01-01

    In this work, we present the development of a capacitive tactile sensing array realized by using MEMS fabrication techniques and flexible printed circuit board (FPCB) technologies. The sensing array, which consists of two micromachined polydimethlysiloxane (PDMS) structures and a FPCB, will be used as the artificial skin for robot applications. Each capacitive sensing element comprises two sensing electrodes and a common floating electrode. The sensing electrodes and the metal interconnect for signal scanning are implemented on the FPCB, while the floating electrode is patterned on one of the PDMS structures. This special design can effectively reduce the complexity of the device structure and thus makes the device highly manufacturable. The characteristics of the devices with different dimensions are measured and discussed. The corresponding scanning circuits are also designed and implemented. The tactile images induced by the PMMA stamps of different shapes are also successfully captured by a fabricated 8 × 8 array

  16. Proton production, neutralisation and reduction in a floating water bridge

    Science.gov (United States)

    Sammer, Martina; Wexler, Adam D.; Kuntke, Philipp; Wiltsche, Helmar; Stanulewicz, Natalia; Lankmayr, Ernst; Woisetschläger, Jakob; Fuchs, Elmar C.

    2015-10-01

    This work reports on proton production, transport, reduction and neutralization in floating aqueous bridges under the application of a high dc voltage (‘floating water bridge’). Recently possible mechanisms for proton transfer through the bridge were suggested. In this work we visualize and describe the production of protons in the anolyte and their neutralization in the catholyte. Apart from that, protons are reduced to hydrogen due to electrolysis. Microbubbles are detached instantly, due to the electrohydrodynamic flow at the electrode surface. No larger, visible bubbles are formed and the system degasses through the bridge due to its higher local temperature. A detailed analysis of trace elements originating from beaker material, anode or the atmosphere is presented, showing that their influence on the overall conduction compared to the contribution of protons is negligible. Finally, an electrochemical rationale of high voltage electrolysis of low ionic strength solutions is presented.

  17. Neutron scattering of a floating heavy water bridge

    International Nuclear Information System (INIS)

    Fuchs, Elmar C; Bitschnau, Brigitte; Woisetschlaeger, Jakob; Maier, Eugen; Beuneu, Brigitte; Teixeira, Jose

    2009-01-01

    When high voltage is applied to distilled water filled into two beakers close to each other, a water connection forms spontaneously, giving the impression of a floating water bridge (Fuchs et al 2007 J. Phys. D: Appl. Phys. 40 6112-4, 2008 J. Phys. D: Appl. Phys. 41 185502). This phenomenon is of special interest, since it comprises a number of phenomena currently tackled in modern water science. In this work, the first data on neutron scattering of a floating heavy water bridge are presented and possible interpretations are discussed. D 2 O was measured instead of H 2 O because of the very strong incoherent scattering of H. The obtained data support the 'bubble hypothesis' suggested earlier (Fuchs et al 2008).

  18. A floating water bridge produces water with excess charge

    Science.gov (United States)

    Fuchs, Elmar C.; Sammer, Martina; Wexler, Adam D.; Kuntke, Philipp; Woisetschläger, Jakob

    2016-03-01

    Excess positive and negative Bjerrum-defect like charge (protonic and ‘aterprotonic’, from ancient Greek ἄ'τɛρ, ‘without’) in anolyte and catholyte of high voltage electrolysis of highly pure water was found during the so-called ‘floating water bridge’ experiment. The floating water bridge is a special case of an electrohydrodynamic liquid bridge and constitutes an intriguing phenomenon that occurs when a high potential difference (~kV cm-1) is applied between two beakers of water. To obtain such results impedance spectroscopy was used. This measurement technique allows the depiction and simulation of complex aqueous systems as simple electric circuits. In the present work we show that there is an additional small contribution from the difference in conductivity between anolyte and catholyte which cannot be measured with a conductivity meter, but is clearly visible in an impedance spectrum.

  19. Floating and flying ferrofluid bridges induced by external magnetic fields

    Science.gov (United States)

    Ma, Rongchao; Zhou, Yixin; Liu, Jing

    2015-04-01

    A ferrofluid is a mixture that exhibits both magnetism and fluidity. This merit enables the ferrofluid to be used in a wide variety of areas. Here we show that a floating ferrofluid bridge can be induced between two separated boards under a balanced external magnetic field generated by two magnets, while a flying ferrofluid bridge can be induced under an unbalanced external magnetic field generated by only one magnet. The mechanisms of the ferrofluid bridges were discussed and the corresponding mathematical equations were also established to describe the interacting magnetic force between the ferro particles inside the ferrofluid. This work answered a basic question that, except for the well-known floating water bridges that are related to electricity, one can also build up a liquid bridge that is related to magnetism.

  20. Floating Marine Debris in waters of the Mexican Central Pacific.

    Science.gov (United States)

    Díaz-Torres, Evelyn R; Ortega-Ortiz, Christian D; Silva-Iñiguez, Lidia; Nene-Preciado, Alejandro; Orozco, Ernesto Torres

    2017-02-15

    The presence of marine debris has been reported recently in several oceans basins; there is very little information available for Mexican Pacific coasts, however. This research examined the composition, possible sources, distribution, and density of Floating Marine Debris (FMD) during nine research surveys conducted during 2010-2012 in the Mexican Central Pacific (MCP). Of 1820 floating objects recorded, 80% were plastic items. Sources of FMD were determined using key objects, which indicated that the most were related to the presence of the industrial harbor and of a growing fishing industry in the study area. Densities were relatively high, ranging from 40 to 2440objects/km 2 ; the highest densities were recorded in autumn. FMD were distributed near coastal regions, mainly in Jalisco, influenced by river outflow and surface currents. Our results seem to follow worldwide trends and highlight the need for further studies on potential ecological impacts within coastal waters of the MCP. Copyright © 2016 Elsevier Ltd. All rights reserved.

  1. A floating water bridge produces water with excess charge

    International Nuclear Information System (INIS)

    Fuchs, Elmar C; Sammer, Martina; Wexler, Adam D; Kuntke, Philipp; Woisetschläger, Jakob

    2016-01-01

    Excess positive and negative Bjerrum-defect like charge (protonic and ‘aterprotonic’, from ancient Greek ατερ, ‘without’) in anolyte and catholyte of high voltage electrolysis of highly pure water was found during the so-called ‘floating water bridge’ experiment. The floating water bridge is a special case of an electrohydrodynamic liquid bridge and constitutes an intriguing phenomenon that occurs when a high potential difference (∼kV cm −1 ) is applied between two beakers of water. To obtain such results impedance spectroscopy was used. This measurement technique allows the depiction and simulation of complex aqueous systems as simple electric circuits. In the present work we show that there is an additional small contribution from the difference in conductivity between anolyte and catholyte which cannot be measured with a conductivity meter, but is clearly visible in an impedance spectrum. (paper)

  2. Proton production, neutralisation and reduction in a floating water bridge

    International Nuclear Information System (INIS)

    Sammer, Martina; Wexler, Adam D; Kuntke, Philipp; Stanulewicz, Natalia; Lankmayr, Ernst; Woisetschläger, Jakob; Fuchs, Elmar C; Wiltsche, Helmar

    2015-01-01

    This work reports on proton production, transport, reduction and neutralization in floating aqueous bridges under the application of a high dc voltage (‘floating water bridge’). Recently possible mechanisms for proton transfer through the bridge were suggested. In this work we visualize and describe the production of protons in the anolyte and their neutralization in the catholyte. Apart from that, protons are reduced to hydrogen due to electrolysis. Microbubbles are detached instantly, due to the electrohydrodynamic flow at the electrode surface. No larger, visible bubbles are formed and the system degasses through the bridge due to its higher local temperature. A detailed analysis of trace elements originating from beaker material, anode or the atmosphere is presented, showing that their influence on the overall conduction compared to the contribution of protons is negligible. Finally, an electrochemical rationale of high voltage electrolysis of low ionic strength solutions is presented. (paper)

  3. Comparative Measurements of Indoor Radon in Homes and Floating Houses

    International Nuclear Information System (INIS)

    Changmuang, Wirote; Tantawiroon, Malulee; Polphong, Pornsri

    2003-06-01

    A survey of the radon ( 222 Rn) concentrations in 318 homes and 152 floating houses (1410 samples) in Phitsanulok province, using a passive 222 Rn charcoal canister and measurement by gamma spectrometry. Floating houses showed significant lower mean levels (8.22 Bqm -3 ) than homes (21.56 Bqm -3 ) (p 222 Rn concentrations indicated that concrete homes had a higher level than wooden homes and homes lying on ground had a higher level than those built at 1 meter or more above ground. The estimated annual mean effective dose equivalent 0.35 mSvy -1 and the annual lung dose equivalent of 5.94 mSvy -1 were only one-third of the world mean estimates

  4. Determination of current loads of floating platform for special purposes

    Science.gov (United States)

    Ma, Guang-ying; Yao, Yun-long; Zhao, Chen-yao

    2017-08-01

    This article studied a new floating offshore platform for special purposes, which was assembled by standard floating modules. The environmental load calculation of the platform is an important part of the research of the ocean platform, which has always been paid attention to by engineers. In addition to wave loads, the wind loads and current loads are also important environmental factors that affect the dynamic response of the offshore platform. The current loads on the bottom structure should not be ignored. By Fluent software, the hydrostatic conditions and external current loads of the platform were calculated in this paper. The coefficient which is independent of the current velocity, namely, current force coefficient, can be fitted through current loads, which can be used for the consequent hydrodynamic and mooring analyses.

  5. Floating tumor debris. A cause of intermittent biliary obstruction.

    Science.gov (United States)

    Roslyn, J J; Kuchenbecker, S; Longmire, W P; Tompkins, R K

    1984-11-01

    Tumor debris, free-floating in the major biliary ductal system, is a cause of intermittent biliary obstruction that has previously not been recognized. Six patients had hepatic neoplasms with episodic jaundice and/or cholangitis due to floating tumor debris. Diagnosis included metastatic adenocarcinoma of the colon (n = 3), cholangiocarcinoma (n = 1), hepatocellular carcinoma (n = 1), and cavernous hemangioma (n = 1). All patients underwent biliary exploration, with hepatic resection and transhepatic intubation in two and T-tube placement in four. One patient died in the early postoperative period, and the major complication rate in the five survivors was 0%. Four of the five survivors had no further episodes suggestive of major bile duct obstruction. Our experience emphasizes the importance of distinguishing extrahepatic obstruction secondary to tumor debris from the more common causes of jaundice in patients with tumors and suggests that safe and effective palliation can be achieved in these patients.

  6. Management of “floating elbow” in children

    Science.gov (United States)

    Suresh, SS

    2007-01-01

    Background: Supracondylar fractures associated with ipsilateral forearm fractures, aptly termed as “floating elbow” is a rare injury in children after a fall from height. The various authors have reported their results with conservative treatment of one or both injuries to aggressive emergency operative fixation of both components. Materials and Methods: During a period of three years, the author managed four cases of floating elbow in children. All cases were managed by closed reduction and pinning of both components of the injury. Results: All patients recovered full elbow range of motion at three months followup and were rated as excellent as per modified Flynn's criteria. None of the patients developed cubitus varus deformity, complications related to the pins or delayed union. Conclusions: Early closed reduction and K wire fixation of both components of this injury gives better stability and prevents development of complications like compartment syndrome and elbow deformities. PMID:21139796

  7. Fear of Floating and Inflation Targeting in Turkey

    Directory of Open Access Journals (Sweden)

    Vasif Abiyev

    2014-12-01

    Full Text Available The objective of this paper is to test empirical validity of Fear of Floating hypothesis for Turkey after the adoption of Inflation Targeting. We start applying methodologies developed by Calvo and Reinhart (2002 and Ball and Reyes (2004, 2008 to check the probabilities of changes in exchange rate and monetary policy instruments before and after inflation targeting regime. We then use a VAR model to estimate exchange rate pass-through and response of monetary policy instruments to exchange rate shocks before and after inflation targeting regime. VAR model helps to understand the impacts of switch in monetary policy regime on exchange rate pass-through and foreign exchange market interventions. The paper concludes that after the adoption of inflation targeting regime, the exchange rate pass-through still matters for the attainment of inflation targets and the monetary policy do not exhibit a fear of floating practices.

  8. Cascade Analysis of a Floating Wind Turbine Rotor

    International Nuclear Information System (INIS)

    Eliassen, Lene; Jakobsen, Jasna B; Knauer, Andreas; Nielsen, Finn Gunnar

    2014-01-01

    Mounting a wind turbine on a floating foundation introduces more complexity to the aerodynamic loading. The floater motion contains a wide range of frequencies. To study some of the basic dynamic load effect on the blades due to these motions, a two-dimensional cascade approach, combined with a potential vortex method, is used. This is an alternative method to study the aeroelastic behavior of wind turbines that is different from the traditional blade element momentum method. The analysis tool demands little computational power relative to a full three dimensional vortex method, and can handle unsteady flows. When using the cascade plane, a ''cut'' is made at a section of the wind turbine blade. The flow is viewed parallel to the blade axis at this cut. The cascade model is commonly used for analysis of turbo machineries. Due to the simplicity of the code it requires little computational resources, however it has limitations in its validity. It can only handle two-dimensional potential flow, i.e. including neither three-dimensional effects, such as the tip loss effect, nor boundary layers and stall effects are modeled. The computational tool can however be valuable in the overall analysis of floating wind turbines, and evaluation of the rotor control system. A check of the validity of the vortex panel code using an airfoil profile is performed, comparing the variation of the lift force, to the theoretically derived Wagner function. To analyse the floating wind turbine, a floating structure with hub height 90 m is chosen. An axial motion of the rotor is considered

  9. MANAGED FLOAT EXCHANGE RATE SYSTEM: THE SINGAPORE EXPERIENCE

    OpenAIRE

    HOE EE KHOR; JASON LEE; EDWARD ROBINSON; SAKTIANDI SUPAAT

    2007-01-01

    This paper examines the key characteristics of Singapore's exchange rate-centered monetary policy; in particular, its managed float regime which incorporates key features of the basket, band and crawl system popularized by Williamson (1998, 1999). We assess how the flexibility accorded by this framework has been advantageous in facilitating adjustment to various shocks to the economy. A characterization of the countercyclical nature of Singapore's exchange rate policy is also offered, with re...

  10. Freely floating structures trapping time-harmonic water waves (revisited)

    OpenAIRE

    Kuznetsov, Nikolay; Motygin, Oleg

    2014-01-01

    We study the coupled small-amplitude motion of the mechanical system consisting of infinitely deep water and a structure immersed in it. The former is bounded above by a free surface, whereas the latter is formed by an arbitrary finite number of surface-piercing bodies floating freely. The mathematical model of time-harmonic motion is a spectral problem in which the frequency of oscillations serves as the spectral parameter. It is proved that there exist axisymmetric structures consisting of ...

  11. Classifying Floating Potential Measurement Unit Data Products as Science Data

    Science.gov (United States)

    Coffey, Victoria; Minow, Joseph

    2015-01-01

    We are Co-Investigators for the Floating Potential Measurement Unit (FPMU) on the International Space Station (ISS) and members of the FPMU operations and data analysis team. We are providing this memo for the purpose of classifying raw and processed FPMU data products and ancillary data as NASA science data with unrestricted, public availability in order to best support science uses of the data.

  12. Overcoming Fear of Floating: Exchange Rate Policies in Chile.

    OpenAIRE

    Jose De Gregorio; Andrea Tokman R.

    2004-01-01

    The paper reviews the exchange rate management experience in Chile, with particular emphasis on the floating exchange rate regime and its two forex intervention episodes. It presents evidence on Chile’s favorable conditions to face exchange rate shocks: a well-developed financial sector, that offers hedging opportunities taken up by the corporate sector to decrease its vulnerability through balance sheet effects; and a low and decreasing level of passthrough from the exchange rate to prices. ...

  13. The study to estimate the floating population in Seoul, Korea

    OpenAIRE

    Lee, Geon Woo; Lee, Yong Jin; Kim, Youngeun; Hong, Seung-Han; Kim, Soohwaun; Kim, Jeong Soo; Lee, Jong Tae; Shin, Dong Chun; Lim, Youngwook

    2017-01-01

    Traffic-related pollutants have been reported to increase the morbidity of respiratory diseases. In order to apply management policies related to motor vehicles, studies of the floating population living in cities are important. The rate of metro rail transit system use by passengers residing in Seoul is about 54% of total public transportation use. Through the rate of metro use, the people-flow ratios in each administrative area were calculated. By applying a people-flow ratio based on the o...

  14. Memory design

    DEFF Research Database (Denmark)

    Tanderup, Sisse

    by cultural forms, often specifically by the concept of memory in philosophy, sociology and psychology, while Danish design traditionally has been focusing on form and function with frequent references to the forms of nature. Alessi's motivation for investigating the concept of memory is that it adds......Mind and Matter - Nordik 2009 Conference for Art Historians Design Matters Contributed Memory design BACKGROUND My research concerns the use of memory categories in the designs by the companies Alessi and Georg Jensen. When Alessi's designers create their products, they are usually inspired...... a cultural dimension to the design objects, enabling the objects to make an identity-forming impact. Whether or not the concept of memory plays a significant role in Danish design has not yet been elucidated fully. TERMINOLOGY The concept of "memory design" refers to the idea that design carries...

  15. Disputed Memory

    DEFF Research Database (Denmark)

    , individual and political discourse and electronic social media. Analyzing memory disputes in various local, national and transnational contexts, the chapters demonstrate the political power and social impact of painful and disputed memories. The book brings new insights into current memory disputes...... in Central, Eastern and Southeastern Europe. It contributes to the understanding of processes of memory transmission and negotiation across borders and cultures in Europe, emphasizing the interconnectedness of memory with emotions, mediation and politics....... century in the region. Written by an international group of scholars from a diversity of disciplines, the chapters approach memory disputes in methodologically innovative ways, studying representations and negotiations of disputed pasts in different media, including monuments, museum exhibitions...

  16. Main Memory

    OpenAIRE

    Boncz, Peter; Liu, Lei; Özsu, M.

    2008-01-01

    htmlabstractPrimary storage, presently known as main memory, is the largest memory directly accessible to the CPU in the prevalent Von Neumann model and stores both data and instructions (program code). The CPU continuously reads instructions stored there and executes them. It is also called Random Access Memory (RAM), to indicate that load/store instructions can access data at any location at the same cost, is usually implemented using DRAM chips, which are connected to the CPU and other per...

  17. Seismic response analysis of floating nuclear power plant

    International Nuclear Information System (INIS)

    Hagiwara, Yutaka; Nakamura, Hideharu; Shiojiri, Hiroo

    1988-01-01

    Since Floating Nuclear Power Plants (FNPs) are considered to be isolated from horizontal seismic motion, it is anticipated to reduce seismic load for plant components and buildings on the barge. On the other hand, barge oscillation and sloshing in the closed basin might be excited by earthquakes, because natural periods of those motions correspond to relatively-long period component (between 2 and 20 seconds) of seismic motion. Therefore, it is necessary to evaluate seismic isolation effects and barge oscillation, for the rational design of FNPs. However, there do not exist any reasonable analytical tools which can evaluate seismic response of floating structures in closed basin. The purpose of the present report is to develop a seismic analysis method for FNPs. The proposed method is based on the finite element method, and the formulation includes fluid-structure interaction, water surface wave, buoyancy effect, and non-linear characteristics of mooring system. Response analysis can be executed in both time-domain and frequency-domain. Shaking table tests were conducted to validate the proposed method of analysis. The test results showed significant isolation effect of floating structure, and apparent interaction between the barge and the basin. And 2-D and 3-D frequency domain analyses and the 2-D linear and non-linear time-domain analyses were done and those analyses could simulate the test results well. (author)

  18. Advancements of floating strip Micromegas detectors for medical imaging applications

    Energy Technology Data Exchange (ETDEWEB)

    Klitzner, Felix; Biebel, Otmar; Bortfeldt, Jonathan; Flierl, Bernhard [LS Schaile, LMU Muenchen (Germany); Magallanes, Lorena [LS Parodi, LMU Muenchen (Germany); Universitaetsklinikum Heidelberg (Germany); Parodi, Katia [LS Parodi, LMU Muenchen (Germany); Heidelberger Ionenstrahl Therapiezentrum (Germany); Voss, Bernd [Gesellschaft fuer Schwerionenforschung, Darmstadt (Germany)

    2016-07-01

    Floating strip Micromegas have proven to be high-rate capable tracking detectors with excellent spatial and temporal resolution for particle fluxes up to 7 MHz/cm{sup 2}. To further increase the high-rate capability a Ne:CF{sub 4} 86:14 vol.% gas mixture has been used as detector gas. We present results from measurements with a seven detector system consisting of six low material budget floating strip Micromegas, a GEM detector and a scintillator based particle range telescope. The gaseous and the scintillation detectors were read out with APV25 frontend boards, allowing for single strip readout with pulse height and timing information. A two-dimensional readout anode for floating strip Micromegas has been tested for the first time. The Micromegas detectors were operated with minimal additional drift field, which significantly improves the timing resolution and also the spatial resolution for inclined tracks. We discuss the detector performance in high-rate carbon and proton beams at the Heidelberg Ion Beam Therapy Center (HIT) and present radiographies of phantoms, acquired with the system.

  19. Submerged Fixed Floating Structure under the Action of Surface Current

    Directory of Open Access Journals (Sweden)

    Zhen Cui

    2018-01-01

    Full Text Available The implementation of floating structures has increased with the construction of new sluices for flood control. The overturning moment of floating structure and its influencing factors are the important parameters that determine the structural safety. It is essential to understand the overturning characteristics of these structures in currents. Based on hydrodynamic theory and equilibrium analysis, the hydraulic characteristics of a floating structure are discussed by means of theoretical analysis and experiments. A formula for the overturning moment is developed in terms of the time-averaged pressure on the structure. The corresponding parametric study aims to assess the effects of flow velocities, vertical positions, shape ratios and water levels on the overturning moment. The experimental results show that hydrodynamic factors have a significant influence on the overturning of the structure. Furthermore, a relationship is obtained between the overturning moment and the contributing parameters according to dimensional analysis and the linear fitting method of multidimensional ordinary least squares (OLS. The results predicted by the formula agree with the experimental results, demonstrating the potential for general applicability.

  20. Experimental investigation of the stability of the floating water bridge

    Science.gov (United States)

    Montazeri Namin, Reza; Azizpour Lindi, Shiva; Amjadi, Ahmad; Jafari, Nima; Irajizad, Peyman

    2013-09-01

    When a high voltage is applied between two beakers filled with deionized water, a floating bridge of water is formed in between exceeding the length of 2 cm when the beakers are pulled apart. Currently two theories regarding the stability of the floating water bridge exist, one suggesting that the tension caused by electric field in the dielectric medium is holding the bridge and the other suggesting surface tension to be responsible for the vertical equilibrium. We construct experiments in which the electric field and the geometry of the bridge are measured and compared with predictions of theories of the floating water bridge stability. We use a numerical simulation for estimation of the electric field. Our results indicate that the two forces of dielectric and surface tensions hold the bridge against gravity simultaneously and, having the same order of magnitude, neither of the two forces are negligible. In bridges with larger diameters, the effect of dielectric tension is slightly more in the vertical equilibrium than surface tension. Results show that the stability can be explained by macroscopic forces, regardless of the microscopic changes in the water structure.