Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

International Nuclear Information System (INIS)

Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin; Chi, Li-Feng; Wang, Sui-Dong

2015-01-01

Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process

Al2O3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application

International Nuclear Information System (INIS)

Yuan, C L; Chan, M Y; Lee, P S; Darmawan, P; Setiawan, Y

2007-01-01

The integration of nanoparticles has high potential in technological applications and opens up possibilities of the development of new devices. Compared to the conventional floating gate memory, a structure containing nanocrystals embedded in dielectrics shows high potential to produce a memory with high endurance, low operating voltage, fast write-erase speeds and better immunity to soft errors [S. Tiwari, F. Rana, H. Hanafi et al. 1996 Appl.Phys. Lett. 68, 1377]. A significant improvement on data retention [J. J. Lee, X. Wang et al. 2003 Proceedings of the VLSI Technol. Symposium, p33] can be observed when discrete nanodots are used instead of continuous floating gate as charge storage nodes because local defect related leakage can be reduced efficiently. Furthermore, using a high-k dielectric in place of the conventional SiO2 based dielectric, nanodots flash memory is able to achieve significantly improved programming efficiency and data retention [A. Thean and J. -P. Leburton, 2002 IEEE Potentials 21, 35; D. W. Kim, T. Kim and S. K. Banerjee, 2003 IEEE Trans. Electron Devices 50, 1823]. We have recently successfully developed a method to produce nanodots embedded in high-k gate dielectrics [C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Electrochemical and Solid-State Letters 9, F53; C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Europhys. Lett. 74, 177]. In this paper, we fabricated the memory structure of Al 2 O 3 nanocrystals embedded in amorphous Lu 2 O 3 high k dielectric using pulsed laser ablation. The mean size and density of the Al 2 O 3 nanocrystals are estimated to be about 5 nm and 7x1011 cm -2 , respectively. Good electrical performances in terms of large memory window and good data retention were observed. Our preparation method is simple, fast and economical

Modeling and simulation of floating gate nanocrystal FET devices and circuits

Science.gov (United States)

Hasaneen, El-Sayed A. M.

The nonvolatile memory market has been growing very fast during the last decade, especially for mobile communication systems. The Semiconductor Industry Association International Technology Roadmap for Semiconductors states that the difficult challenge for nonvolatile semiconductor memories is to achieve reliable, low power, low voltage performance and high-speed write/erase. This can be achieved by aggressive scaling of the nonvolatile memory cells. Unfortunately, scaling down of conventional nonvolatile memory will further degrade the retention time due to the charge loss between the floating gate and drain/source contacts and substrate which makes conventional nonvolatile memory unattractive. Using nanocrystals as charge storage sites reduces dramatically the charge leakage through oxide defects and drain/source contacts. Floating gate nanocrystal nonvolatile memory, FG-NCNVM, is a candidate for future memory because it is advantageous in terms of high-speed write/erase, small size, good scalability, low-voltage, low-power applications, and the capability to store multiple bits per cell. Many studies regarding FG-NCNVMs have been published. Most of them have dealt with fabrication improvements of the devices and device characterizations. Due to the promising FG-NCNVM applications in integrated circuits, there is a need for circuit a simulation model to simulate the electrical characteristics of the floating gate devices. In this thesis, a FG-NCNVM circuit simulation model has been proposed. It is based on the SPICE BSIM simulation model. This model simulates the cell behavior during normal operation. Model validation results have been presented. The SPICE model shows good agreement with experimental results. Current-voltage characteristics, transconductance and unity gain frequency (fT) have been studied showing the effect of the threshold voltage shift (DeltaVth) due to nanocrystal charge on the device characteristics. The threshold voltage shift due to

Optimization of pentacene double floating gate memories based on charge injection regulated by SAM functionalization

Directory of Open Access Journals (Sweden)

S. Li

2018-02-01

Full Text Available Pentacene based double nano-floating gate memories (NFGM by using gold nanoparticles (Au NPs and reduced graphene oxide (rGO sheets as charge trapping layers are prepared and demonstrated. Particularly, the NFGM chemically treated by 2,3,4,5,6-pentafluorobenzenethiol (PFBT self-assembled monolayers (SAM exhibits excellent memory performances, including high mobility of 0.23 cm2V-1s-1, the large memory window of 51 V, and the stable retention property more than 108 s. Comparing the performances of NFGM without treating with PFBT SAM, the improving performances of the memory devices by SAM modification are explained by the increase of charge injection, which could be further investigated by XPS and UPS. In particular, the results highlight the utility of SAM modulations and controlling of charge transport in the development of organic transistor memories.

Optimization of pentacene double floating gate memories based on charge injection regulated by SAM functionalization

Science.gov (United States)

Li, S.; Guérin, D.; Lenfant, S.; Lmimouni, K.

2018-02-01

Pentacene based double nano-floating gate memories (NFGM) by using gold nanoparticles (Au NPs) and reduced graphene oxide (rGO) sheets as charge trapping layers are prepared and demonstrated. Particularly, the NFGM chemically treated by 2,3,4,5,6-pentafluorobenzenethiol (PFBT) self-assembled monolayers (SAM) exhibits excellent memory performances, including high mobility of 0.23 cm2V-1s-1, the large memory window of 51 V, and the stable retention property more than 108 s. Comparing the performances of NFGM without treating with PFBT SAM, the improving performances of the memory devices by SAM modification are explained by the increase of charge injection, which could be further investigated by XPS and UPS. In particular, the results highlight the utility of SAM modulations and controlling of charge transport in the development of organic transistor memories.

Experimental study on x-rays dose enhancement effects for floating gate ROMs

CERN Document Server

Guo Hong Xia; Chen Yu Sheng; Han Fu Bin; He Chao Hui; Zhao Hui

2002-01-01

Experimental results of x-ray dose enhancement effects are given for floating gate read-only memory (ROMs) irradiated in the Beijing Synchrotron Radiation Facility. The wrong byte numbers vs. total irradiation dose have been tested and the equivalent relation of total dose damage is provided compared the response of devices irradiated with sup 6 sup 0 Co gamma-ray source. The x-ray dose enhancement factors for floating gate ROMs are obtained firstly in China. These results can be an effective evaluation data for x-rays radiation hardening technology

Ionizing radiation effects on floating gates

International Nuclear Information System (INIS)

Cellere, G.; Paccagnella, A.; Visconti, A.; Bonanomi, M.

2004-01-01

Floating gate (FG) memories, and in particular Flash, are the dominant among modern nonvolatile memory technologies. Their performance under ionizing radiation was traditionally studied for the use in space, but has become of general interest in recent years. We are showing results on the charge loss from programmed FG arrays after 10 keV x-rays exposure. Exposure to ionizing radiation results in progressive discharge of the FG. More advanced devices, featuring smaller FG, are less sensitive to ionizing radiation that older ones. The reason is identified in the photoemission of electrons from FG, since at high doses it dominates over charge loss deriving from electron/hole pairs generation in the oxides

The floating-gate non-volatile semiconductor memory--from invention to the digital age.

Science.gov (United States)

Sze, S M

2012-10-01

In the past 45 years (from 1967 to 2012), the non-volatile semiconductor memory (NVSM) has emerged from a floating-gate concept to the prime technology driver of the largest industry in the world-the electronics industry. In this paper, we briefly review the historical development of NVSM and project its future trends to the year 2020. In addition, we consider NVSM's wide-range of applications from the digital cellular phone to tablet computer to digital television. As the device dimension is scaled down to the deca-nanometer regime, we expect that many innovations will be made to meet the scaling challenges, and NVSM-inspired technology will continue to enrich and improve our lives for decades to come.

Suppressing the memory state of floating gate transistors with repeated femtosecond laser backside irradiations

Science.gov (United States)

Chambonneau, Maxime; Souiki-Figuigui, Sarra; Chiquet, Philippe; Della Marca, Vincenzo; Postel-Pellerin, Jérémy; Canet, Pierre; Portal, Jean-Michel; Grojo, David

2017-04-01

We demonstrate that infrared femtosecond laser pulses with intensity above the two-photon ionization threshold of crystalline silicon induce charge transport through the tunnel oxide in floating gate Metal-Oxide-Semiconductor transistor devices. With repeated irradiations of Flash memory cells, we show how the laser-produced free-electrons naturally redistribute on both sides of the tunnel oxide until the electric field of the transistor is suppressed. This ability enables us to determine in a nondestructive, rapid and contactless way the flat band and the neutral threshold voltages of the tested device. The physical mechanisms including nonlinear ionization, quantum tunneling of free-carriers, and flattening of the band diagram are discussed for interpreting the experiments. The possibility to control the carriers in memory transistors with ultrashort pulses holds promises for fast and remote device analyses (reliability, security, and defectivity) and for considerable developments in the growing field of ultrafast microelectronics.

MemFlash device: floating gate transistors as memristive devices for neuromorphic computing

Science.gov (United States)

Riggert, C.; Ziegler, M.; Schroeder, D.; Krautschneider, W. H.; Kohlstedt, H.

2014-10-01

Memristive devices are promising candidates for future non-volatile memory applications and mixed-signal circuits. In the field of neuromorphic engineering these devices are especially interesting to emulate neuronal functionality. Therefore, new materials and material combinations are currently investigated, which are often not compatible with Si-technology processes. The underlying mechanisms of the device often remain unclear and are paired with low device endurance and yield. These facts define the current most challenging development tasks towards a reliable memristive device technology. In this respect, the MemFlash concept is of particular interest. A MemFlash device results from a diode configuration wiring scheme of a floating gate transistor, which enables the persistent device resistance to be varied according to the history of the charge flow through the device. In this study, we investigate the scaling conditions of the floating gate oxide thickness with respect to possible applications in the field of neuromorphic engineering. We show that MemFlash cells exhibit essential features with respect to neuromorphic applications. In particular, cells with thin floating gate oxides show a limited synaptic weight growth together with low energy dissipation. MemFlash cells present an attractive alternative for state-of-art memresitive devices. The emulation of associative learning is discussed by implementing a single MemFlash cell in an analogue circuit.

MemFlash device: floating gate transistors as memristive devices for neuromorphic computing

International Nuclear Information System (INIS)

Riggert, C; Ziegler, M; Kohlstedt, H; Schroeder, D; Krautschneider, W H

2014-01-01

Memristive devices are promising candidates for future non-volatile memory applications and mixed-signal circuits. In the field of neuromorphic engineering these devices are especially interesting to emulate neuronal functionality. Therefore, new materials and material combinations are currently investigated, which are often not compatible with Si-technology processes. The underlying mechanisms of the device often remain unclear and are paired with low device endurance and yield. These facts define the current most challenging development tasks towards a reliable memristive device technology. In this respect, the MemFlash concept is of particular interest. A MemFlash device results from a diode configuration wiring scheme of a floating gate transistor, which enables the persistent device resistance to be varied according to the history of the charge flow through the device. In this study, we investigate the scaling conditions of the floating gate oxide thickness with respect to possible applications in the field of neuromorphic engineering. We show that MemFlash cells exhibit essential features with respect to neuromorphic applications. In particular, cells with thin floating gate oxides show a limited synaptic weight growth together with low energy dissipation. MemFlash cells present an attractive alternative for state-of-art memresitive devices. The emulation of associative learning is discussed by implementing a single MemFlash cell in an analogue circuit. (paper)

A Method for Estimating the Probability of Floating Gate Prompt Charge Loss in a Radiation Environment

Science.gov (United States)

Edmonds, L. D.

2016-01-01

Since advancing technology has been producing smaller structures in electronic circuits, the floating gates in modern flash memories are becoming susceptible to prompt charge loss from ionizing radiation environments found in space. A method for estimating the risk of a charge-loss event is given.

MBE-grown Si and Si1−xGex quantum dots embedded within epitaxial Gd2O3 on Si(111) substrate for floating gate memory device

International Nuclear Information System (INIS)

Manna, S; Aluguri, R; Katiyar, A; Ray, S K; Das, S; Laha, A; Osten, H J

2013-01-01

Si and Si 1−x Ge x quantum dots embedded within epitaxial Gd 2 O 3 grown by molecular beam epitaxy have been studied for application in floating gate memory devices. The effect of interface traps and the role of quantum dots on the memory properties have been studied using frequency-dependent capacitance–voltage and conductance–voltage measurements. Multilayer quantum dot memory comprising four and five layers of Si quantum dots exhibits a superior memory window to that of single-layer quantum dot memory devices. It has also been observed that single-layer Si 1−x Ge x quantum dots show better memory characteristics than single-layer Si quantum dots. (paper)

Floating Gate CMOS Dosimeter With Frequency Output

Science.gov (United States)

Garcia-Moreno, E.; Isern, E.; Roca, M.; Picos, R.; Font, J.; Cesari, J.; Pineda, A.

2012-04-01

This paper presents a gamma radiation dosimeter based on a floating gate sensor. The sensor is coupled with a signal processing circuitry, which furnishes a square wave output signal, the frequency of which depends on the total dose. Like any other floating gate dosimeter, it exhibits zero bias operation and reprogramming capabilities. The dosimeter has been designed in a standard 0.6 m CMOS technology. The whole dosimeter occupies a silicon area of 450 m250 m. The initial sensitivity to a radiation dose is Hz/rad, and to temperature and supply voltage is kHz/°C and 0.067 kHz/mV, respectively. The lowest detectable dose is less than 1 rad.

Low Noise Bias Current/Voltage References Based on Floating-Gate MOS Transistors

DEFF Research Database (Denmark)

Igor, Mucha

1997-01-01

The exploitation of floating-gate MOS transistors as reference current and voltage sources is investigated. Test structures of common source and common drain floating-gate devices have been implemented in a commercially available 0.8 micron double-poly CMOS process. The measurements performed...

Non-volatile nano-floating gate memory with Pt-Fe{sub 2}O{sub 3} composite nanoparticles and indium gallium zinc oxide channel

Energy Technology Data Exchange (ETDEWEB)

Hu, Quanli [Myongji University, Department of Nano Science and Engineering (Korea, Republic of); Lee, Seung Chang; Baek, Yoon-Jae [Myongji University, Department of Materials Science and Engineering (Korea, Republic of); Lee, Hyun Ho [Myongji University, Department of Chemical Engineering (Korea, Republic of); Kang, Chi Jung [Myongji University, Department of Nano Science and Engineering (Korea, Republic of); Kim, Hyun-Mi; Kim, Ki-Bum [Seoul National University, Department of Materials Science and Engineering (Korea, Republic of); Yoon, Tae-Sik, E-mail: tsyoon@mju.ac.kr [Myongji University, Department of Nano Science and Engineering (Korea, Republic of)

2013-02-15

Non-volatile nano-floating gate memory characteristics with colloidal Pt-Fe{sub 2}O{sub 3} composite nanoparticles with a mostly core-shell structure and indium gallium zinc oxide channel layer were investigated. The Pt-Fe{sub 2}O{sub 3} nanoparticles were chemically synthesized through the preferential oxidation of Fe and subsequent pileup of Pt into the core in the colloidal solution. The uniformly assembled nanoparticles' layer could be formed with a density of {approx}3 Multiplication-Sign 10{sup 11} cm{sup -2} by a solution-based dip-coating process. The Pt core ({approx}3 nm in diameter) and Fe{sub 2}O{sub 3}-shell ({approx}6 nm in thickness) played the roles of the charge storage node and tunneling barrier, respectively. The device exhibited the hysteresis in current-voltage measurement with a threshold voltage shift of {approx}4.76 V by gate voltage sweeping to +30 V. It also showed the threshold shift of {approx}0.66 V after pulse programming at +20 V for 1 s with retention > {approx}65 % after 10{sup 4} s. These results demonstrate the feasibility of using colloidal nanoparticles with core-shell structure as gate stacks of the charge storage node and tunneling dielectric for low-temperature and solution-based processed non-volatile memory devices.

Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

Science.gov (United States)

Jayanti, Srikant

Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG

CMOS Active-Pixel Image Sensor With Simple Floating Gates

Science.gov (United States)

Fossum, Eric R.; Nakamura, Junichi; Kemeny, Sabrina E.

1996-01-01

Experimental complementary metal-oxide/semiconductor (CMOS) active-pixel image sensor integrated circuit features simple floating-gate structure, with metal-oxide/semiconductor field-effect transistor (MOSFET) as active circuit element in each pixel. Provides flexibility of readout modes, no kTC noise, and relatively simple structure suitable for high-density arrays. Features desirable for "smart sensor" applications.

Nonvolatile Memories Using Quantum Dot (QD) Floating Gates Assembled on II-VI Tunnel Insulators

Science.gov (United States)

Suarez, E.; Gogna, M.; Al-Amoody, F.; Karmakar, S.; Ayers, J.; Heller, E.; Jain, F.

2010-07-01

This paper presents preliminary data on quantum dot gate nonvolatile memories using nearly lattice-matched ZnS/Zn0.95Mg0.05S/ZnS tunnel insulators. The GeO x -cladded Ge and SiO x -cladded Si quantum dots (QDs) are self-assembled site-specifically on the II-VI insulator grown epitaxially over the Si channel (formed between the source and drain region). The pseudomorphic II-VI stack serves both as a tunnel insulator and a high- κ dielectric. The effect of Mg incorporation in ZnMgS is also investigated. For the control gate insulator, we have used Si3N4 and SiO2 layers grown by plasma- enhanced chemical vapor deposition.

A radiation-tolerant, low-power non-volatile memory based on silicon nanocrystal quantum dots

OpenAIRE

Bell, L. D.; Boer, E.; Ostraat, M.; Brongersma, M. L.; Flagan, R. C.; Atwater, H. A.; De Blauwe, J.; Green, M. L.

2001-01-01

Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in SiO_2 is a critical aspect of the performance ...

Fabrication of Nonvolatile Memory Effects in High-k Dielectric Thin Films Using Electron Irradiation

International Nuclear Information System (INIS)

Park, Chanrock; Cho, Daehee; Kim, Jeongeun; Hwang, Jinha

2010-01-01

Electron Irradiation can be applied towards nano-floating gate memories which are recognized as one of the next-generation nonvolatile memory semiconductors. NFGMs can overcome the preexisting limitations encountered in Dynamic Random Access Memories and Flash memories with the excellent advantages, i. e. high-density information storage, high response speed, high compactness, etc. The traditional nano-floating gate memories are fabricated through multi-layered nano structures of the dissimilar materials where the charge-trapping portions are sandwiched into the high-k dielectrics. However, this work reports the unique nonvolatile responses in single-layered high-k dielectric thin films if irradiated with highly accelerated electron beams. The implications of the electron irradiation will be discussed towards high-performance nano-floating gate memories

Transparent nanoscale floating gate memory using self-assembled bismuth nanocrystals in Bi(2) Mg(2/3) Nb(4/3) O(7) (BMN) pyrochlore thin films grown at room temperature.

Science.gov (United States)

Jung, Hyun-June; Yoon, Soon-Gil; Hong, Soon-Ku; Lee, Jeong-Yong

2012-07-03

Bismuth nanocrystals for a nanoscale floating gate memory device are self-assembled in Bi(2) Mg(2/3) Nb(4/3) O(7) (BMN) dielectric films grown at room temperature by radio-frequency sputtering. The TEM cross-sectional image shows the "real" structure grown on a Si (001) substrate. The image magnified from the dotted box (red color) in the the cross-sectional image clearly shows bismuth nanoparticles at the interface between the Al(2) O(3) and HfO(2) layer (right image). Nanoparticles approximately 3 nm in size are regularly distributed at the interface. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

New fabrication technique using side-wall-type plasma-enhanced chemical-vapor deposition for a floating gate memory with a Si nanodot

Energy Technology Data Exchange (ETDEWEB)

Ichikawa, Kazunori; Punchaipetch, Prakaipetch; Yano, Hiroshi; Hatayama, Tomoaki; Uraoka, Yukiharu; Fuyuki, Takashi [Nara Institute of Science and Techonology, Ikoma, Nara (Japan); Tomyo, Atsushi; Takahashi, Eiji; Hayashi, Tsukasa; Ogata, Kiyoshi [Nissin Electric Co., Ltd., Kyoto (Japan)

2006-08-15

We have used side-wall-type plasma-enhanced chemical-vapor deposition (PECVD)to fabricate a floating gate memory using a Si nano-crystal dot on thermal SiO{sub 2} at a low temperature of 430 .deg. C. Atomic and radical hydrogen plays an important role in the low-temperature formation of the dot. Transmission electron microscopy (TEM) and atomic force microscopy (AFM) analyses revealed that the average dot size and density were approximately 5 nm and 8.5 X 10{sup 11} cm{sup -2}, respectively. The electronic properties were investigated with metal-oxide-semiconductor-field-effect transistors (MOSFETs) by embedding the nanocrystal dots into SiO{sub 2} fabricated using CVD. Electron charging and discharging were clearly confirmed at room temperature by the transient behavior of the capacitance and the transfer curve. The number of electrons confined in a single dot was approximately one. Furthermore, we evaluated the electronic behavior by varying the bias condition or the operating temperature. The critical charge density could be confirmed to be independent of the injection condition.

A 1T Dynamic Random Access Memory Cell Based on Gated Thyristor with Surrounding Gate Structure for High Scalability.

Science.gov (United States)

Kim, Hyungjin; Kim, Sihyun; Kim, Hyun-Min; Lee, Kitae; Kim, Sangwan; Pak, Byung-Gook

2018-09-01

In this study, we investigate a one-transistor (1T) dynamic random access memory (DRAM) cell based on a gated-thyristor device utilizing voltage-driven bistability to enable high-speed operations. The structural feature of the surrounding gate using a sidewall provides high scalability with regard to constructing an array architecture of the proposed devices. In addition, the operation mechanism, I-V characteristics, DRAM operations, and bias dependence are analyzed using a commercial device simulator. Unlike conventional 1T DRAM cells utilizing the floating body effect, excess carriers which are required to be stored to make two different states are not generated but injected from the n+ cathode region, giving the device high-speed operation capabilities. The findings here indicate that the proposed DRAM cell offers distinct advantages in terms of scalability and high-speed operations.

Single-Walled Carbon-Nanotubes-Based Organic Memory Structures

Directory of Open Access Journals (Sweden)

Sundes Fakher

2016-09-01

Full Text Available The electrical behaviour of organic memory structures, based on single-walled carbon-nanotubes (SWCNTs, metal–insulator–semiconductor (MIS and thin film transistor (TFT structures, using poly(methyl methacrylate (PMMA as the gate dielectric, are reported. The drain and source electrodes were fabricated by evaporating 50 nm gold, and the gate electrode was made from 50 nm-evaporated aluminium on a clean glass substrate. Thin films of SWCNTs, embedded within the insulating layer, were used as the floating gate. SWCNTs-based memory devices exhibited clear hysteresis in their electrical characteristics (capacitance–voltage (C–V for MIS structures, as well as output and transfer characteristics for transistors. Both structures were shown to produce reliable and large memory windows by virtue of high capacity and reduced charge leakage. The hysteresis in the output and transfer characteristics, the shifts in the threshold voltage of the transfer characteristics, and the flat-band voltage shift in the MIS structures were attributed to the charging and discharging of the SWCNTs floating gate. Under an appropriate gate bias (1 s pulses, the floating gate is charged and discharged, resulting in significant threshold voltage shifts. Pulses as low as 1 V resulted in clear write and erase states.

Experimental study on gamma irradiation effects of floating gate ROMs The ROM is stated for Read-only Memory

CERN Document Server

He Chao Hui; Chen Xiao Hua; Wang Yan Ping; Peng Hong Lun

2002-01-01

Experimental results of gamma irradiation effects are given for Floating gate ROMs. There is an accumulated dose threshold. Errors occur when accumulated dose is above the threshold, no error occurs when below the threshold. The errors go up with the increase of the accumulated dose. Errors occur in devices that are measured during irradiation and irradiated in power on, moreover, new data cannot be written in these devices with programmer. However, under more accumulated dose, there is no error in devices in power off mode and new data can be written in these devices with programmer

Using a Floating-Gate MOS Transistor as a Transducer in a MEMS Gas Sensing System

Directory of Open Access Journals (Sweden)

Gaspar Casados-Cruz

2010-11-01

Full Text Available Floating-gate MOS transistors have been widely used in diverse analog and digital applications. One of these is as a charge sensitive device in sensors for pH measurement in solutions or using gates with metals like Pd or Pt for hydrogen sensing. Efforts are being made to monolithically integrate sensors together with controlling and signal processing electronics using standard technologies. This can be achieved with the demonstrated compatibility between available CMOS technology and MEMS technology. In this paper an in-depth analysis is done regarding the reliability of floating-gate MOS transistors when charge produced by a chemical reaction between metallic oxide thin films with either reducing or oxidizing gases is present. These chemical reactions need temperatures around 200 °C or higher to take place, so thermal insulation of the sensing area must be assured for appropriate operation of the electronics at room temperature. The operation principle of the proposal here presented is confirmed by connecting the gate of a conventional MOS transistor in series with a Fe2O3 layer. It is shown that an electrochemical potential is present on the ferrite layer when reacting with propane.

Input Stage for Low-Voltage, Low-Noise Preamplifiers Based on a Floating-Gate MOS Transistor

DEFF Research Database (Denmark)

Igor, Mucha

1997-01-01

A novel input stage for low-voltage, low-noise preamplifiers for integrated capacitive sensors is presented. The input stage of the preamplifier employs floating-gate MOS transistors which are capable of storing the operation point of the input stage over several years without any severe degradat......A novel input stage for low-voltage, low-noise preamplifiers for integrated capacitive sensors is presented. The input stage of the preamplifier employs floating-gate MOS transistors which are capable of storing the operation point of the input stage over several years without any severe...... degradation of the performance of the circuit and without the need for a repeating programming. In this way the noise originating from any resistance previously used for the definition of the operating point is avoided completely and, moreover, by avoiding the input high-pass filter both the saturation...

Models for Total-Dose Radiation Effects in Non-Volatile Memory

Energy Technology Data Exchange (ETDEWEB)

Campbell, Philip Montgomery; Wix, Steven D.

2017-04-01

The objective of this work is to develop models to predict radiation effects in non- volatile memory: flash memory and ferroelectric RAM. In flash memory experiments have found that the internal high-voltage generators (charge pumps) are the most sensitive to radiation damage. Models are presented for radiation effects in charge pumps that demonstrate the experimental results. Floating gate models are developed for the memory cell in two types of flash memory devices by Intel and Samsung. These models utilize Fowler-Nordheim tunneling and hot electron injection to charge and erase the floating gate. Erase times are calculated from the models and compared with experimental results for different radiation doses. FRAM is less sensitive to radiation than flash memory, but measurements show that above 100 Krad FRAM suffers from a large increase in leakage current. A model for this effect is developed which compares closely with the measurements.

Novel Quantum Dot Gate FETs and Nonvolatile Memories Using Lattice-Matched II-VI Gate Insulators

Science.gov (United States)

Jain, F. C.; Suarez, E.; Gogna, M.; Alamoody, F.; Butkiewicus, D.; Hohner, R.; Liaskas, T.; Karmakar, S.; Chan, P.-Y.; Miller, B.; Chandy, J.; Heller, E.

2009-08-01

This paper presents the successful use of ZnS/ZnMgS and other II-VI layers (lattice-matched or pseudomorphic) as high- k gate dielectrics in the fabrication of quantum dot (QD) gate Si field-effect transistors (FETs) and nonvolatile memory structures. Quantum dot gate FETs and nonvolatile memories have been fabricated in two basic configurations: (1) monodispersed cladded Ge nanocrystals (e.g., GeO x -cladded-Ge quantum dots) site-specifically self-assembled over the lattice-matched ZnMgS gate insulator in the channel region, and (2) ZnTe-ZnMgTe quantum dots formed by self-organization, using metalorganic chemical vapor-phase deposition (MOCVD), on ZnS-ZnMgS gate insulator layers grown epitaxially on Si substrates. Self-assembled GeO x -cladded Ge QD gate FETs, exhibiting three-state behavior, are also described. Preliminary results on InGaAs-on-InP FETs, using ZnMgSeTe/ZnSe gate insulator layers, are presented.

Preparation of NiFe binary alloy nanocrystals for nonvolatile memory applications

Institute of Scientific and Technical Information of China (English)

无

2010-01-01

In this work,an idea which applies binary alloy nanocrystal floating gate to nonvolatile memory application was introduced.The relationship between binary alloy’s work function and its composition was discussed theoretically.A nanocrystal floating gate structure with NiFe nanocrystals embedded in SiO2 dielectric layers was fabricated by magnetron sputtering.The micro-structure and composition deviation of the prepared NiFe nanocrystals were also investigated by TEM and EDS.

The GaN trench gate MOSFET with floating islands: High breakdown voltage and improved BFOM

Science.gov (United States)

Shen, Lingyan; Müller, Stephan; Cheng, Xinhong; Zhang, Dongliang; Zheng, Li; Xu, Dawei; Yu, Yuehui; Meissner, Elke; Erlbacher, Tobias

2018-02-01

A novel GaN trench gate (TG) MOSFET with P-type floating islands (FLI) in drift region, which can suppress the electric field peak at bottom of gate trench during the blocking state and prevent premature breakdown in gate oxide, is proposed and investigated by TCAD simulations. The influence of thickness, position, doping concentration and length of the FLI on breakdown voltage (BV) and specific on-resistance (Ron_sp) is studied, providing useful guidelines for design of this new type of device. Using optimized parameters for the FLI, GaN FLI TG-MOSFET obtains a BV as high as 2464 V with a Ron_sp of 3.0 mΩ cm2. Compared to the conventional GaN TG-MOSFET with the same structure parameters, the Baliga figure of merit (BFOM) is enhanced by 150%, getting closer to theoretical limit for GaN devices.

Graphene-ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations

Science.gov (United States)

Kim, Woo Young; Kim, Hyeon-Don; Kim, Teun-Teun; Park, Hyun-Sung; Lee, Kanghee; Choi, Hyun Joo; Lee, Seung Hoon; Son, Jaehyeon; Park, Namkyoo; Min, Bumki

2016-01-01

Memory metamaterials are artificial media that sustain transformed electromagnetic properties without persistent external stimuli. Previous memory metamaterials were realized with phase-change materials, such as vanadium dioxide or chalcogenide glasses, which exhibit memory behaviour with respect to electrically/optically induced thermal stimuli. However, they require a thermally isolated environment for longer retention or strong optical pump for phase-change. Here we demonstrate electrically programmable nonvolatile memory metadevices realised by the hybridization of graphene, a ferroelectric and meta-atoms/meta-molecules, and extend the concept further to establish reconfigurable logic-gate metadevices. For a memory metadevice having a single electrical input, amplitude, phase and even the polarization multi-states were clearly distinguishable with a retention time of over 10 years at room temperature. Furthermore, logic-gate functionalities were demonstrated with reconfigurable logic-gate metadevices having two electrical inputs, with each connected to separate ferroelectric layers that act as the multi-level controller for the doping level of the sandwiched graphene layer.

Real-time reconfigurable devices implemented in UV-light programmable floating-gate CMOS

Energy Technology Data Exchange (ETDEWEB)

Aunet, Snorre

2002-06-01

This dissertation describes using theory, computer simulations and laboratory measurements a new class of real time reconfigurable UV-programmable floating-gate circuits operating with current levels typically in the pA to {mu}A range, implemented in a standard double-poly CMOS technology. A new design method based on using the same basic two-MOSFET circuits extensively is proposed, meant for improving the opportunities to make larger FGUVMOS circuitry than previously reported. By using the same basic circuitry extensively, instead of different circuitry for basic digital functions, the goal is to ease UV-programming and test and save circuitry on chip and I/O-pads. Matching of circuitry should also be improved by using this approach. Compact circuitry can be made, reducing wiring and active components. Compared to earlier FGUVMOS approaches the number of transistors for implementing the CARRY' of a FULL-ADDER is reduced from 22 to 2. A complete FULL-ADDER can be implemented using only 8 transistors. 2-MOSFET circuits able to implement CARRY', NOR, NAND and INVERT functions are demonstrated by measurements on chip, working with power supply voltages ranging from 800 mV down to 93 mV. An 8-transistor FULL-ADDER might use 2500 times less energy than a FULL-ADDER implemented using standard cells in the same 0.6 {mu}m CMOS technology while running at 1 MHz. The circuits are also shown to be a new class of linear threshold elements, which is the basic building blocks of neural networks. Theory is developed as a help in the design of floating-gate circuits.

Ultra-Low Voltage Class AB Switched Current Memory Cell

DEFF Research Database (Denmark)

Igor, Mucha

1996-01-01

This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process with thr......This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process...... with threshold voltages of 0.9V. Both hand calculations and PSPICE simulations showed that the cells designed allowed a maximum signal range better than +/-13 micoamp, with a supply voltage down to 1V and a quiescent bias current of 1 microamp, resulting in a very high current efficiency and effective power...

Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope.

Science.gov (United States)

Bae, Jong-Ho; Lee, Jong-Ho

2016-05-01

A steep subthreshold slope characteristic is achieved through p-GaN gate HEMT with dual-gate structure. Obtained subthreshold slope is less than 120 μV/dec. Based on the measured and simulated data obtained from single-gate device, breakdown of parasitic floating-base bipolar transistor and floating gate charged with holes are responsible to increase abruptly in drain current. In the dual-gate device, on-current degrades with high temperature but subthreshold slope is not changed. To observe the switching speed of dual-gate device and transient response of drain current are measured. According to the transient responses of drain current, switching speed of the dual-gate device is about 10(-5) sec.

Improved Reading Gate For Vertical-Bloch-Line Memory

Science.gov (United States)

Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

1994-01-01

Improved design for reading gate of vertical-Bloch-line magnetic-bubble memory increases reliability of discrimination between binary ones and zeros. Magnetic bubbles that signify binary "1" and "0" produced by applying sufficiently large chopping currents to memory stripes. Bubbles then propagated differentially in bubble sorter. Method of discriminating between ones and zeros more reliable.

Theory of the synchronous motion of an array of floating flap gates oscillating wave surge converter

Science.gov (United States)

Michele, Simone; Sammarco, Paolo; d'Errico, Michele

2016-08-01

We consider a finite array of floating flap gates oscillating wave surge converter (OWSC) in water of constant depth. The diffraction and radiation potentials are solved in terms of elliptical coordinates and Mathieu functions. Generated power and capture width ratio of a single gate excited by incoming waves are given in terms of the radiated wave amplitude in the far field. Similar to the case of axially symmetric absorbers, the maximum power extracted is shown to be directly proportional to the incident wave characteristics: energy flux, angle of incidence and wavelength. Accordingly, the capture width ratio is directly proportional to the wavelength, thus giving a design estimate of the maximum efficiency of the system. We then compare the array and the single gate in terms of energy production. For regular waves, we show that excitation of the out-of-phase natural modes of the array increases the power output, while in the case of random seas we show that the array and the single gate achieve the same efficiency.

Implementation of floating gate MOSFET in inverter for threshold voltage tunability

Directory of Open Access Journals (Sweden)

Musa F.A.S.

2017-01-01

Full Text Available This paper presents the ability of floating gate MOSFET (FGMOS threshold voltage to be programmed or tuned which is exploited to improve the performance of electronic circuit design. This special characteristic owns by FGMOS is definitely contributes towards low voltage and low power circuit design. The comparison of threshold voltage between FGMOS and conventional NMOS is done in order to prove that FGMOS is able to produce a lower threshold voltage compared to conventional NMOS. In addition, in this paper, an implementation of FGMOS into inverter circuit is also done to show the programmability of FGMOS threshold voltage. The operations of the inverter circuits are verified using Sypnopsys simulation in 0.1μm CMOS technology with supply voltage of 1.8V.

Hybrid dual gate ferroelectric memory for multilevel information storage

KAUST Repository

Khan, Yasser

2015-01-01

Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field-effect transistor (FeFET) and a bottom thin-film transistor (TFT). The devices are all fabricated at low temperatures (∼200°C), and demonstrate excellent performance with high hole mobility of 2.7 cm2 V-1 s-1, large memory window of ∼18 V, and a low sub-threshold swing ∼-4 V dec-1. The channel conductance of the bottom-TFT and the top-FeFET can be controlled independently by the bottom and top gates, respectively. The results demonstrate multilevel nonvolatile information storage using ferroelectric memory devices with good retention characteristics.

The memory effect of a pentacene field-effect transistor with a polarizable gate dielectric

Science.gov (United States)

Unni, K. N. N.; de Bettignies, Remi; Dabos-Seignon, Sylvie; Nunzi, Jean-Michel

2004-06-01

The nonvolatile transistor memory element is an interesting topic in organic electronics. In this case a memory cell consists of only one device where the stored information is written as a gate insulator polarization by a gate voltage pulse and read by the channel conductance control with channel voltage pulse without destruction of the stored information. Therefore such transistor could be the base of non-volatile non-destructively readable computer memory of extremely high density. Also devices with polarizable gate dielectrics can function more effectively in certain circuits. The effective threshold voltage Vt can be brought very close to zero, for applications where the available gate voltage is limited. Resonant and adaptive circuits can be tuned insitu by polarizing the gates. Poly(vinylidene fluoride), PVDF and its copolymer with trifluoroethylene P(VDF-TrFE) are among the best known and most widely used ferroelectric polymers. In this manuscript, we report new results of an organic FET, fabricated with pentacene as the active material and P(VDF-TrFE) as the gate insulator. Application of a writing voltage of -50 V for short duration results in significant change in the threshold voltage and remarkable increase in the drain current. The memory effect is retained over a period of 20 hours.

Hybrid dual gate ferroelectric memory for multilevel information storage

KAUST Repository

Khan, Yasser; Caraveo-Frescas, Jesus Alfonso; Alshareef, Husam N.

2015-01-01

Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field

Radiation-hardened optically reconfigurable gate array exploiting holographic memory characteristics

Science.gov (United States)

Seto, Daisaku; Watanabe, Minoru

2015-09-01

In this paper, we present a proposal for a radiation-hardened optically reconfigurable gate array (ORGA). The ORGA is a type of field programmable gate array (FPGA). The ORGA configuration can be executed by the exploitation of holographic memory characteristics even if 20% of the configuration data are damaged. Moreover, the optoelectronic technology enables the high-speed reconfiguration of the programmable gate array. Such a high-speed reconfiguration can increase the radiation tolerance of its programmable gate array to 9.3 × 104 times higher than that of current FPGAs. Through experimentation, this study clarified the configuration dependability using the impulse-noise emulation and high-speed configuration capabilities of the ORGA with corrupt configuration contexts. Moreover, the radiation tolerance of the programmable gate array was confirmed theoretically through probabilistic calculation.

Leaky Integrate-and-Fire Neuron Circuit Based on Floating-Gate Integrator

Science.gov (United States)

Kornijcuk, Vladimir; Lim, Hyungkwang; Seok, Jun Yeong; Kim, Guhyun; Kim, Seong Keun; Kim, Inho; Choi, Byung Joon; Jeong, Doo Seok

2016-01-01

The artificial spiking neural network (SNN) is promising and has been brought to the notice of the theoretical neuroscience and neuromorphic engineering research communities. In this light, we propose a new type of artificial spiking neuron based on leaky integrate-and-fire (LIF) behavior. A distinctive feature of the proposed FG-LIF neuron is the use of a floating-gate (FG) integrator rather than a capacitor-based one. The relaxation time of the charge on the FG relies mainly on the tunnel barrier profile, e.g., barrier height and thickness (rather than the area). This opens up the possibility of large-scale integration of neurons. The circuit simulation results offered biologically plausible spiking activity (circuit was subject to possible types of noise, e.g., thermal noise and burst noise. The simulation results indicated remarkable distributional features of interspike intervals that are fitted to Gamma distribution functions, similar to biological neurons in the neocortex. PMID:27242416

Memory effect in silicon time-gated single-photon avalanche diodes

International Nuclear Information System (INIS)

Dalla Mora, A.; Contini, D.; Di Sieno, L.; Tosi, A.; Boso, G.; Villa, F.; Pifferi, A.

2015-01-01

We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons

Memory effect in silicon time-gated single-photon avalanche diodes

Energy Technology Data Exchange (ETDEWEB)

Dalla Mora, A.; Contini, D., E-mail: davide.contini@polimi.it; Di Sieno, L. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Tosi, A.; Boso, G.; Villa, F. [Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Pifferi, A. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); CNR, Istituto di Fotonica e Nanotecnologie, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy)

2015-03-21

We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons.

Organizing of delay, input gate and memory of proportional chamber channel basing on D-trigger

International Nuclear Information System (INIS)

Vladimirov, S.V.; Kuzichev, V.F.; Rabin, N.V.

1980-01-01

Economical organization of delay, input gate and proportional chamber (PC) channel memory on the 155 TM2 D trigger basis is described. The channel consists of an amplifier; delay element permitting to synchronize PC signal and recording strobe-signal; input gate, where coincidence of the above signals occurs; memory element, where the data from a wire are recorded and stored; read gate through which the data are transmitted for further processing. Presented is one of the versions of circuit solution for delay element, input gate and momory element. Flowsheet peculiarity is the simplicity of fabrication and tuning as well as low cost of the device

Controlling Working Memory Operations by Selective Gating: The Roles of Oscillations and Synchrony

Science.gov (United States)

Dipoppa, Mario; Szwed, Marcin; Gutkin, Boris S.

2016-01-01

Working memory (WM) is a primary cognitive function that corresponds to the ability to update, stably maintain, and manipulate short-term memory (ST M) rapidly to perform ongoing cognitive tasks. A prevalent neural substrate of WM coding is persistent neural activity, the property of neurons to remain active after having been activated by a transient sensory stimulus. This persistent activity allows for online maintenance of memory as well as its active manipulation necessary for task performance. WM is tightly capacity limited. Therefore, selective gating of sensory and internally generated information is crucial for WM function. While the exact neural substrate of selective gating remains unclear, increasing evidence suggests that it might be controlled by modulating ongoing oscillatory brain activity. Here, we review experiments and models that linked selective gating, persistent activity, and brain oscillations, putting them in the more general mechanistic context of WM. We do so by defining several operations necessary for successful WM function and then discussing how such operations may be carried out by mechanisms suggested by computational models. We specifically show how oscillatory mechanisms may provide a rapid and flexible active gating mechanism for WM operations. PMID:28154616

State memory in solution gated epitaxial graphene

Science.gov (United States)

Butko, A. V.; Butko, V. Y.; Lebedev, S. P.; Lebedev, A. A.; Davydov, V. Y.; Smirnov, A. N.; Eliseyev, I. A.; Dunaevskiy, M. S.; Kumzerov, Y. A.

2018-06-01

We studied electrical transport in transistors fabricated on a surface of high quality epitaxial graphene with density of defects as low as 5·1010 cm-2 and observed quasistatic hysteresis with a time constant in a scale of hours. This constant is in a few orders of magnitude greater than the constant previously reported in CVD graphene. The hysteresis observed here can be described as a shift of ∼+2V of the Dirac point measured during a gate voltage increase from the position of the Dirac point measured during a gate voltage decrease. This hysteresis can be characterized as a nonvolatile quasistatic state memory effect in which the state of the gated graphene is determined by its initial state prior to entering the hysteretic region. Due to this effect the difference in resistance of the gated graphene measured in the hysteretic region at the same applied voltages can be as high as 70%. The observed effect can be explained by assuming that charge carriers in graphene and oppositely charged molecular ions from the solution form quasistable interfacial complexes at the graphene interface. These complexes likely preserve the initial state by preventing charge carriers in graphene from discharging in the hysteretic region.

Configurable unitary transformations and linear logic gates using quantum memories.

Science.gov (United States)

Campbell, G T; Pinel, O; Hosseini, M; Ralph, T C; Buchler, B C; Lam, P K

2014-08-08

We show that a set of optical memories can act as a configurable linear optical network operating on frequency-multiplexed optical states. Our protocol is applicable to any quantum memories that employ off-resonant Raman transitions to store optical information in atomic spins. In addition to the configurability, the protocol also offers favorable scaling with an increasing number of modes where N memories can be configured to implement arbitrary N-mode unitary operations during storage and readout. We demonstrate the versatility of this protocol by showing an example where cascaded memories are used to implement a conditional cz gate.

Ultra-Low Power Consuming Direct Radiation Sensors Based on Floating Gate Structures

Directory of Open Access Journals (Sweden)

Evgeny Pikhay

2017-07-01

Full Text Available In this paper, we report on ultra-low power consuming single poly floating gate direct radiation sensors. The developed devices are intended for total ionizing dose (TID measurements and fabricated in a standard CMOS process flow. Sensor design and operation is discussed in detail. Original array sensors were suggested and fabricated that allowed high statistical significance of the radiation measurements and radiation imaging functions. Single sensors and array sensors were analyzed in combination with the specially developed test structures. This allowed insight into the physics of sensor operations and exclusion of the phenomena related to material degradation under irradiation in the interpretation of the measurement results. Response of the developed sensors to various sources of ionizing radiation (Gamma, X-ray, UV, energetic ions was investigated. The optimal design of sensor for implementation in dosimetry systems was suggested. The roadmap for future improvement of sensor performance is suggested.

Insights into operation of planar tri-gate tunnel field effect transistor for dynamic memory application

Science.gov (United States)

Navlakha, Nupur; Kranti, Abhinav

2017-07-01

Insights into device physics and operation through the control of energy barriers are presented for a planar tri-gate Tunnel Field Effect Transistor (TFET) based dynamic memory. The architecture consists of a double gate (G1) at the source side and a single gate (G2) at the drain end of the silicon film. Dual gates (G1) effectively enhance the tunneling based read mechanism through the enhanced coupling and improved electrostatic control over the channel. The single gate (G2) controls the holes in the potential barrier induced through the proper selection of bias and workfunction. The results indicate that the planar tri-gate achieves optimum performance evaluated in terms of two composite metrics (M1 and M2), namely, product of (i) Sense Margin (SM) and Retention Time (RT) i.e., M1 = SM × RT and (ii) Sense Margin and Current Ratio (CR) i.e., M2 = SM × CR. The regulation of barriers created by the gates (G1 and G2) through the optimal use of device parameters leads to better performance metrics, with significant improvement at scaled lengths as compared to other tunneling based dynamic memory architectures. The investigation shows that lengths of G1, G2 and lateral spacing can be scaled down to 25 nm, 50 nm, and 30 nm, respectively, while achieving reasonable values for (M1, M2). The work demonstrates a systematic approach to showcase the advancement in TFET based Dynamic Random Access Memory (DRAM) through the use of planar tri-gate topology at a lower bias value. The concept, design, and operation of planar tri-gate architecture provide valuable viewpoints for TFET based DRAM.

A CMOS Micro-power, Class-AB “Flipped” Voltage Follower using the quasi floating-gate technique

Directory of Open Access Journals (Sweden)

Juan Jesus Ocampo-Hidalgo

2017-05-01

Full Text Available This paper presents the design and characterization of a new analog voltage follower for low-voltage applications. The main idea is based on the “Flipped” Voltage Follower and the use of the quasi-floating gate technique for achieving class AB operation. A test cell was simulated and fabricated using a 0,5 μm CMOS technology. When the proposed circuit is supplied with VDD = 1,5 V, it presents a power consumption of only 413 μW. Measurement and experimental results show a gain bandwidth product of 10 MHz and a total harmonic distortion of 1,12 % at 1 MHz.

Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications

Science.gov (United States)

Hong, Augustin Jinwoo

Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.

Nonvolatile memory characteristics in metal-oxide-semiconductors containing metal nanoparticles fabricated by using a unique laser irradiation method

International Nuclear Information System (INIS)

Yang, JungYup; Yoon, KapSoo; Kim, JuHyung; Choi, WonJun; Do, YoungHo; Kim, ChaeOk; Hong, JinPyo

2006-01-01

Metal-oxide-semiconductor (MOS) capacitors with metal nanoparticles (Co NP) were successfully fabricated by utilizing an external laser exposure technique for application of non-volatile memories. Images of high-resolution transmission electron microscopy reveal that the spherically shaped Co NP are clearly embedded in the gate oxide layer. Capacitance-voltage measurements exhibit typical charging and discharging effects with a large flat-band shift. The effects of the tunnel oxide thickness and the different tunnel materials are analyzed using capacitance-voltage and retention characteristics. In addition, the memory characteristics of the NP embedded in a high-permittivity material are investigated because the thickness of conventionally available SiO 2 gates is approaching the quantum tunneling limit as devices are scaled down. Finally, the suitability of NP memory devices for nonvolatile memory applications is also discussed. The present results suggest that our unique laser exposure technique holds promise for the NP formation as floating gate elements in nonvolatile NP memories and that the quality of the tunnel oxide is very important for enhancing the retention properties of nonvolatile memory.

A gate drive circuit for gate-turn-off (GTO) devices in series stack

International Nuclear Information System (INIS)

Despe, O.

1999-01-01

A gate-turn-off (GTO) switch is under development at the Advanced Photon Source as a replacement for a thyratron switch in high power pulsed application. The high voltage in the application requires multiple GTOs connected in series. One component that is critical to the success of GTO operation is the gate drive circuit. The gate drive circuit has to provide fast high-current pulses to the GTO gate for fast turn-on and turn-off. It also has to be able to operate while floating at high voltage. This paper describes a gate drive circuit that meets these requirements

Germanium nanoparticles grown at different deposition times for memory device applications

International Nuclear Information System (INIS)

Mederos, M.; Mestanza, S.N.M.; Lang, R.; Doi, I.; Diniz, J.A.

2016-01-01

In the present work, circular Metal-Oxide-Semiconductor capacitors with 200 μm of diameter and germanium (Ge) nanoparticles (NPs) embedded in the gate oxide are studied for memory applications. Optimal process parameters are investigated for Ge NPs growing by low pressure chemical vapor deposition at different deposition times. Photoluminescence measurements showed room-temperature size-dependent green-red region bands attributed to quantum confinement effects present in the NPs. High-frequency capacitance versus voltage measurements demonstrated the memory effects on the MOS structures due to the presence of Ge NPs in the gate oxide acting as discrete floating gates. Current versus voltage measurements confirmed the Fowler-Nordheim tunneling as the programming mechanism of the devices. - Highlights: • Ge nanoparticles with high density and uniforms sizes were obtained by LPCVD. • Room-temperature size-dependent bands of photoluminescence were observed. • MOS capacitors with Ge nanoparticles embedded in the oxide were fabricated. • Ge nanoparticles are the main responsible for the memory properties in the devices. • Fowler-Nordheim tunneling is the conduction mechanism observed on the devices.

Germanium nanoparticles grown at different deposition times for memory device applications

Energy Technology Data Exchange (ETDEWEB)

Mederos, M., E-mail: melissa.mederos@gmail.com [Center for Semiconductor Components and Nanotechnology (CCSNano), University of Campinas (Unicamp), Rua João Pandia Calógeras 90, Campinas, CEP: 13083-870, São Paulo (Brazil); Mestanza, S.N.M. [Federal University of ABC (UFABC), Rua Santa Adélia 166, Bangu, Santo André, CEP: 09210-170, São Paulo (Brazil); Lang, R. [Institute of Science and Technology, Federal University of São Paulo (UNIFESP), Rua Talim, 330, São José dos Campos, CEP: 12231-280, São Paulo (Brazil); Doi, I.; Diniz, J.A. [Center for Semiconductor Components and Nanotechnology (CCSNano), University of Campinas (Unicamp), Rua João Pandia Calógeras 90, Campinas, CEP: 13083-870, São Paulo (Brazil); School of Electrical and Computer Engineering, University of Campinas (Unicamp), Av. Albert Einstein 400, Campinas, CEP: 13083-852, São Paulo (Brazil)

2016-07-29

In the present work, circular Metal-Oxide-Semiconductor capacitors with 200 μm of diameter and germanium (Ge) nanoparticles (NPs) embedded in the gate oxide are studied for memory applications. Optimal process parameters are investigated for Ge NPs growing by low pressure chemical vapor deposition at different deposition times. Photoluminescence measurements showed room-temperature size-dependent green-red region bands attributed to quantum confinement effects present in the NPs. High-frequency capacitance versus voltage measurements demonstrated the memory effects on the MOS structures due to the presence of Ge NPs in the gate oxide acting as discrete floating gates. Current versus voltage measurements confirmed the Fowler-Nordheim tunneling as the programming mechanism of the devices. - Highlights: • Ge nanoparticles with high density and uniforms sizes were obtained by LPCVD. • Room-temperature size-dependent bands of photoluminescence were observed. • MOS capacitors with Ge nanoparticles embedded in the oxide were fabricated. • Ge nanoparticles are the main responsible for the memory properties in the devices. • Fowler-Nordheim tunneling is the conduction mechanism observed on the devices.

The parallel processing system for fast 3D-CT image reconstruction by circular shifting float memory architecture

International Nuclear Information System (INIS)

Wang Shi; Kang Kejun; Wang Jingjin

1996-01-01

Computerized Tomography (CT) is expected to become an inevitable diagnostic technique in the future. However, the long time required to reconstruct an image has been one of the major drawbacks associated with this technique. Parallel process is one of the best way to solve this problem. This paper gives the architecture, hardware and software design of PIRS-4 (4-processor Parallel Image Reconstruction System), which is a parallel processing system for fast 3D-CT image reconstruction by circular shifting float memory architecture. It includes the structure and components of the system, the design of crossbar switch and details of control model, the description of RPBP image reconstruction, the choice of OS (Operate System) and language, the principle of imitating EMS, direct memory R/W of float and programming in the protect model. Finally, the test results are given

A low-voltage flash memory cell utilizing the gate-injection program/erase method with a recessed channel structure

International Nuclear Information System (INIS)

Wu Dake; Huang Ru; Wang Pengfei; Tang Poren; Wang Yangyuan

2008-01-01

In this paper, a low-voltage recessed channel SONOS flash memory using the gate-injection program/erase method is proposed and investigated for NAND application. It is shown that the proposed flash memory can achieve 8 V lower programming voltage compared with planar flash memory, due to the effective capacitance coupling and the electric-field enhancement by combining the recessed channel structure and the gate-injection program/erase method. In addition, more than 30% larger threshold voltage window and improved short channel effects can be obtained in the proposed flash memory

Adult forebrain NMDA receptors gate social motivation and social memory.

Science.gov (United States)

Jacobs, Stephanie; Tsien, Joe Z

2017-02-01

Motivation to engage in social interaction is critical to ensure normal social behaviors, whereas dysregulation in social motivation can contribute to psychiatric diseases such as schizophrenia, autism, social anxiety disorders and post-traumatic stress disorder (PTSD). While dopamine is well known to regulate motivation, its downstream targets are poorly understood. Given the fact that the dopamine 1 (D1) receptors are often physically coupled with the NMDA receptors, we hypothesize that the NMDA receptor activity in the adult forebrain principal neurons are crucial not only for learning and memory, but also for the proper gating of social motivation. Here, we tested this hypothesis by examining sociability and social memory in inducible forebrain-specific NR1 knockout mice. These mice are ideal for exploring the role of the NR1 subunit in social behavior because the NR1 subunit can be selectively knocked out after the critical developmental period, in which NR1 is required for normal development. We found that the inducible deletion of the NMDA receptors prior to behavioral assays impaired, not only object and social recognition memory tests, but also resulted in profound deficits in social motivation. Mice with ablated NR1 subunits in the forebrain demonstrated significant decreases in sociability compared to their wild type counterparts. These results suggest that in addition to its crucial role in learning and memory, the NMDA receptors in the adult forebrain principal neurons gate social motivation, independent of neuronal development. Copyright © 2016 Elsevier Inc. All rights reserved.

The effects of interstimulus interval on sensory gating and on preattentive auditory memory in the oddball paradigm. Can magnitude of the sensory gating affect preattentive auditory comparison process?

Science.gov (United States)

Ermutlu, M Numan; Demiralp, Tamer; Karamürsel, Sacit

2007-01-22

P50, and mismatch negativity (MMN) are components of event-related potentials (ERP) reflecting sensory gating and preattentive auditory memory, respectively. Interstimulus interval (ISI) is an important determinant of the amplitudes of these components and N1. In the present study the interrelation between stimulus gating and preattentive auditory sensory memory were investigated as a function of ISI in 1.5, 2.5 and 3.5s in 15 healthy volunteered participants. ISI factor affected the N1 peak amplitude significantly. MMN amplitude in 2.5s ISI was significantly smaller compared to 1.5 and 3.5s ISI. ISI X stimuli interaction on P50 amplitude was statistically significant. P50 amplitudes to deviant stimuli in 2.5s ISI were larger than the P50 amplitudes in other ISIs. P50 difference (P50d) waveform amplitude correlated significantly with MMN amplitude. The results suggest that: (i) auditory sensory gating could affect preattentive auditory sensory memory by supplying input to the comparator mechanism; (ii) 2.5s ISI is important in displaying the sensory gating and preattentive auditory sensory memory relation.

Auto- and hetero-associative memory using a 2-D optical logic gate

Science.gov (United States)

Chao, Tien-Hsin

1989-06-01

An optical associative memory system suitable for both auto- and hetero-associative recall is demonstrated. This system utilizes Hamming distance as the similarity measure between a binary input and a memory image with the aid of a two-dimensional optical EXCLUSIVE OR (XOR) gate and a parallel electronics comparator module. Based on the Hamming distance measurement, this optical associative memory performs a nearest neighbor search and the result is displayed in the output plane in real-time. This optical associative memory is fast and noniterative and produces no output spurious states as compared with that of the Hopfield neural network model.

Nonvolatile “AND,” “OR,” and “NOT” Boolean logic gates based on phase-change memory

Energy Technology Data Exchange (ETDEWEB)

Li, Y.; Zhong, Y. P.; Deng, Y. F.; Zhou, Y. X.; Xu, L.; Miao, X. S., E-mail: miaoxs@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074 (China); School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China)

2013-12-21

Electronic devices or circuits that can implement both logic and memory functions are regarded as the building blocks for future massive parallel computing beyond von Neumann architecture. Here we proposed phase-change memory (PCM)-based nonvolatile logic gates capable of AND, OR, and NOT Boolean logic operations verified in SPICE simulations and circuit experiments. The logic operations are parallel computing and results can be stored directly in the states of the logic gates, facilitating the combination of computing and memory in the same circuit. These results are encouraging for ultralow-power and high-speed nonvolatile logic circuit design based on novel memory devices.

Nonvolatile “AND,” “OR,” and “NOT” Boolean logic gates based on phase-change memory

International Nuclear Information System (INIS)

Li, Y.; Zhong, Y. P.; Deng, Y. F.; Zhou, Y. X.; Xu, L.; Miao, X. S.

2013-01-01

Electronic devices or circuits that can implement both logic and memory functions are regarded as the building blocks for future massive parallel computing beyond von Neumann architecture. Here we proposed phase-change memory (PCM)-based nonvolatile logic gates capable of AND, OR, and NOT Boolean logic operations verified in SPICE simulations and circuit experiments. The logic operations are parallel computing and results can be stored directly in the states of the logic gates, facilitating the combination of computing and memory in the same circuit. These results are encouraging for ultralow-power and high-speed nonvolatile logic circuit design based on novel memory devices

Evidence for a role of GABA- and glutamate-gated chloride channels in olfactory memory.

Science.gov (United States)

Boumghar, Katia; Couret-Fauvel, Thomas; Garcia, Mikael; Armengaud, Catherine

2012-11-01

In the honeybee, we investigated the role of transmissions mediated by GABA-gated chloride channels and glutamate-gated chloride channels (GluCls) of the mushroom bodies (MBs) on olfactory learning using a single-trial olfactory conditioning paradigm. The GABAergic antagonist picrotoxin (PTX) or the GluCl antagonist L-trans-pyrrolidine-2,4-dicarboxylic acid (L-trans-PDC) was injected alone or in combination into the α-lobes of MBs. PTX impaired early long-term olfactory memory when injected before conditioning or before testing. L-trans-PDC alone induced no significant effect on learning and memory but induced a less specific response to the conditioned odor. When injected before PTX, L-trans-PDC was able to modulate PTX effects. These results emphasize the role of MB GABA-gated chloride channels in consolidation processes and strongly support that GluCls are involved in the perception of the conditioned stimulus.

Growth of Si nanocrystals on alumina and integration in memory devices

Science.gov (United States)

Baron, T.; Fernandes, A.; Damlencourt, J. F.; De Salvo, B.; Martin, F.; Mazen, F.; Haukka, S.

2003-06-01

We present a detailed study of the growth of Si quantum dots (Si QDs) by low pressure chemical vapor deposition on alumina dielectric deposited by atomic layer deposition. The Si QDs density is very high, 1012 cm-2, for a mean diameter between 5 and 10 nm. Al2O3/Si QD stacks have been integrated in memory devices as granular floating gate. The devices demonstrate good charge storage and data retention characteristics.

Negative effect of Au nanoparticles on an IGZO TFT-based nonvolatile memory device

Energy Technology Data Exchange (ETDEWEB)

Lim, Myunghoon; Yoo, Gwangwe; Lee, Jongtaek; Jeong, Seokwon; Roh, Yonghan; Park, Jinhong; Kwon, Namyong [Sungkyunkwan University, Suwon (Korea, Republic of); Jung, Wooshik [Stanford University, Stanford, CA (United States)

2014-02-15

In this letter, the electrical characteristics of nonvolatile memory devices based on back gate type indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are investigated in terms of the Au nanoparticles (NPs) employed in the floating gate-stack of the device. The size of the Au NPs is controlled using a by 500 .deg. C annealing process after the Au thin-film deposition. The size and the roughness of the Au NPs were observed by using scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. In order to analyze the electrical properties according to Au NP size, we measured the current-voltage (I{sub D}-V{sub G}) characteristics of the nonvolatile memory devices fabricated without Au NPs and with Au NPs of various sizes. The size of the Au NP increased, so did the surface roughness of the gate. This resulted in increased carrier scattering, which subsequently degraded the on-current of the memory device. In addition, inter-diffusion between the Au and the α-IGZO through the non-uniform Al{sub 2}O{sub 3} tunneling layer seemed to further degrade the device performance.

Highly scalable 3-D NAND-NOR hybrid-type dual bit per cell flash memory devices with an additional cut-off gate

International Nuclear Information System (INIS)

Cho, Seongjae; Shim, Wonbo; Park, Ilhan; Kim, Yoon; Park, Byunggook

2010-01-01

In this work, a nonvolatile memory (NVM) device of novel structure in 3 dimensions is introduced, and its operation physics is validated. It is based on a pillar structure in which two identical storage nodes are located for dual-bit operation. The two storage nodes on neighboring pillars are controlled by using one common control gate so that the space between silicon pillars can be further reduced. For compatibility with conventional memory operations, an additional cut-off gate is constructed under the common control gate. This is considered as the ultimate form for a 3-D nonvolatile memory device based on a double-gate structure. The underlying physics is explained, and the operational schemes are validated in various aspects by using a numerical device simulation. Also, critical issues in device design for higher reliability are discussed.

Memory and learning behaviors mimicked in nanogranular SiO2-based proton conductor gated oxide-based synaptic transistors.

Science.gov (United States)

Wan, Chang Jin; Zhu, Li Qiang; Zhou, Ju Mei; Shi, Yi; Wan, Qing

2013-11-07

In neuroscience, signal processing, memory and learning function are established in the brain by modifying ionic fluxes in neurons and synapses. Emulation of memory and learning behaviors of biological systems by nanoscale ionic/electronic devices is highly desirable for building neuromorphic systems or even artificial neural networks. Here, novel artificial synapses based on junctionless oxide-based protonic/electronic hybrid transistors gated by nanogranular phosphorus-doped SiO2-based proton-conducting films are fabricated on glass substrates by a room-temperature process. Short-term memory (STM) and long-term memory (LTM) are mimicked by tuning the pulse gate voltage amplitude. The LTM process in such an artificial synapse is due to the proton-related interfacial electrochemical reaction. Our results are highly desirable for building future neuromorphic systems or even artificial networks via electronic elements.

Optimized ONO thickness for multi-level and 2-bit/cell operation for wrapped-select-gate (WSG) SONOS memory

International Nuclear Information System (INIS)

Wu, Woei-Cherng; Chao, Tien-Sheng; Yang, Tsung-Yu; Peng, Wu-Chin; Yang, Wen-Luh; Chen, Jian-Hao; Ma, Ming Wen; Lai, Chao-Sung; Lee, Chien-Hsing; Hsieh, Tsung-Min; Liou, Jhyy Cheng; Chen, Tzu Ping; Chen, Chien Hung; Lin, Chih Hung; Chen, Hwi Huang; Ko, Joe

2008-01-01

In this paper, highly reliable wrapped-select-gate (WSG) silicon–oxide–nitride–oxide–silicon (SONOS) memory cells with multi-level and 2-bit/cell operation have been successfully demonstrated. The source-side injection mechanism for WSG-SONOS memory with different ONO thickness was thoroughly investigated. The different programming efficiencies of the WSG-SONOS memory under different ONO thicknesses are explained by the lateral electrical field extracted from the simulation results. Furthermore, multi-level storage is easily obtained, and good V TH distribution presented, for the WSG-SONOS memory with optimized ONO thickness. High program/erase speed (10 µs/5 ms) and low programming current (3.5 µA) are used to achieve the multi-level operation with tolerable gate and drain disturbance, negligible second-bit effect, excellent data retention and good endurance performance

Direct label-free electrical immunodetection of transplant rejection protein biomarker in physiological buffer using floating gate AlGaN/GaN high electron mobility transistors.

Science.gov (United States)

Tulip, Fahmida S; Eteshola, Edward; Desai, Suchita; Mostafa, Salwa; Roopa, Subramanian; Evans, Boyd; Islam, Syed Kamrul

2014-06-01

Monokine induced by interferon gamma (MIG/CXCL9) is used as an immune biomarker for early monitoring of transplant or allograft rejection. This paper demonstrates a direct electrical, label-free detection method of recombinant human MIG with anti-MIG IgG molecules in physiologically relevant buffer environment. The sensor platform used is a biologically modified GaN-based high electron mobility transistor (HEMT) device. Biomolecular recognition capability was provided by using high affinity anti-MIG monoclonal antibody to form molecular affinity interface receptors on short N-hydroxysuccinimide-ester functionalized disulphide (DSP) self-assembled monolayers (SAMs) on the gold sensing gate of the HEMT device. A floating gate configuration has been adopted to eliminate the influences of external gate voltage. Preliminary test results with the proposed chemically treated GaN HEMT biosensor show that MIG can be detected for a wide range of concentration varying from 5 ng/mL to 500 ng/mL.

Auto and hetero-associative memory using a 2-D optical logic gate

Science.gov (United States)

Chao, Tien-Hsin (Inventor)

1992-01-01

An optical system for auto-associative and hetero-associative recall utilizing Hamming distance as the similarity measure between a binary input image vector V(sup k) and a binary image vector V(sup m) in a first memory array using an optical Exclusive-OR gate for multiplication of each of a plurality of different binary image vectors in memory by the input image vector. After integrating the light of each product V(sup k) x V(sup m), a shortest Hamming distance detection electronics module determines which product has the lowest light intensity and emits a signal that activates a light emitting diode to illuminate a corresponding image vector in a second memory array for display. That corresponding image vector is identical to the memory image vector V(sup m) in the first memory array for auto-associative recall or related to it, such as by name, for hetero-associative recall.

CMOS integration of high-k/metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits

Science.gov (United States)

Dentoni Litta, Eugenio; Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; O’Sullivan, Barry; Machkaoutsan, Vladimir; Fazan, Pierre; Ji, Yunhyuck; Mannaert, Geert; Lorant, Christophe; Sebaai, Farid; Thiam, Arame; Ercken, Monique; Demuynck, Steven; Horiguchi, Naoto

2018-04-01

Integration of high-k/metal gate stacks in peripheral transistors is a major candidate to ensure continued scaling of dynamic random access memory (DRAM) technology. In this paper, the CMOS integration of diffusion and gate replacement (D&GR) high-k/metal gate stacks is investigated, evaluating four different approaches for the critical patterning step of removing the N-type field effect transistor (NFET) effective work function (eWF) shifter stack from the P-type field effect transistor (PFET) area. The effect of plasma exposure during the patterning step is investigated in detail and found to have a strong impact on threshold voltage tunability. A CMOS integration scheme based on an experimental wet-compatible photoresist is developed and the fulfillment of the main device metrics [equivalent oxide thickness (EOT), eWF, gate leakage current density, on/off currents, short channel control] is demonstrated.

Memory effect in gated single-photon avalanche diodes: a limiting noise contribution similar to afterpulsing

Science.gov (United States)

Contini, D.; Dalla Mora, A.; Di Sieno, L.; Cubeddu, R.; Tosi, A.; Boso, G.; Pifferi, A.

2013-03-01

In recent years, emerging applications, such as diffuse optical imaging and spectroscopy (e.g., functional brain imaging and optical mammography), in which a wide dynamic range is crucial, have turned the interest towards Single-Photon Avalanche Diode (SPAD). In these fields, the use of a fast-gated SPAD has proven to be a successful technique to increase the measurement sensitivity of different orders of magnitude. However, an unknown background noise has been observed at high illumination during the gate-OFF time, thus setting a limit to the maximum increase of the dynamic range. In this paper we describe this noise in thin-junction silicon single-photon avalanche diode when a large amount of photons reaches the gated detector during the OFF time preceding the enabling time. This memory effect increases the background noise with respect to primary dark count rate similarly to a classical afterpulsing process, but differently it is not related to a previous avalanche ignition in the detector. We discovered that memory effect increases linearly with the power of light impinging on the detector and it has an exponential trend with time constants far different from those of afterpulsing and independently of the bias voltage applied to the junction. For these reasons, the memory effect is not due to the same trapping states of afterpulsing and must be described as a different process.

Detection of charge storage on molecular thin films of tris(8-hydroxyquinoline) aluminum (Alq3) by Kelvin force microscopy: a candidate system for high storage capacity memory cells.

Science.gov (United States)

Paydavosi, Sarah; Aidala, Katherine E; Brown, Patrick R; Hashemi, Pouya; Supran, Geoffrey J; Osedach, Timothy P; Hoyt, Judy L; Bulović, Vladimir

2012-03-14

Retention and diffusion of charge in tris(8-hydroxyquinoline) aluminum (Alq(3)) molecular thin films are investigated by injecting electrons and holes via a biased conductive atomic force microscopy tip into the Alq(3) films. After the charge injection, Kelvin force microscopy measurements reveal minimal changes with time in the spatial extent of the trapped charge domains within Alq(3) films, even for high hole and electron densities of >10(12) cm(-2). We show that this finding is consistent with the very low mobility of charge carriers in Alq(3) thin films (<10(-7) cm(2)/(Vs)) and that it can benefit from the use of Alq(3) films as nanosegmented floating gates in flash memory cells. Memory capacitors using Alq(3) molecules as the floating gate are fabricated and measured, showing durability over more than 10(4) program/erase cycles and the hysteresis window of up to 7.8 V, corresponding to stored charge densities as high as 5.4 × 10(13) cm(-2). These results demonstrate the potential for use of molecular films in high storage capacity nonvolatile memory cells. © 2012 American Chemical Society

Development of measurement system for radiation effect on static random access memory based field programmable gate array

International Nuclear Information System (INIS)

Yao Zhibin; He Baoping; Zhang Fengqi; Guo Hongxia; Luo Yinhong; Wang Yuanming; Zhang Keying

2009-01-01

Based on the detailed investigation in field programmable gate array(FPGA) radiation effects theory, a measurement system for radiation effects on static random access memory(SRAM)-based FPGA was developed. The testing principle of internal memory, function and power current was introduced. The hardware and software implement means of system were presented. Some important parameters for radiation effects on SRAM-based FPGA, such as configuration RAM upset section, block RAM upset section, function fault section and single event latchup section can be gained with this system. The transmission distance of the system can be over 50 m and the maximum number of tested gates can reach one million. (authors)

Study of the enhancement-mode AlGaN/GaN high electron mobility transistor with split floating gates

Science.gov (United States)

Wang, Hui; Wang, Ning; Jiang, Ling-Li; Zhao, Hai-Yue; Lin, Xin-Peng; Yu, Hong-Yu

2017-11-01

In this work, the charge storage based split floating gates (FGs) enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are studied. The simulation results reveal that under certain density of two dimensional electron gas, the variation tendency of the threshold voltage (Vth) with the variation of the blocking dielectric thickness depends on the FG charge density. It is found that when the length sum and isolating spacing sum of the FGs both remain unchanged, the Vth shall decrease with the increasing FGs number but maintaining the device as E-mode. It is also reported that for the FGs HEMT, the failure of a FG will lead to the decrease of Vth as well as the increase of drain current, and the failure probability can be improved significantly with the increase of FGs number.

Gating of hippocampal activity, plasticity, and memory by entorhinal cortex long-range inhibition.

Science.gov (United States)

Basu, Jayeeta; Zaremba, Jeffrey D; Cheung, Stephanie K; Hitti, Frederick L; Zemelman, Boris V; Losonczy, Attila; Siegelbaum, Steven A

2016-01-08

The cortico-hippocampal circuit is critical for storage of associational memories. Most studies have focused on the role in memory storage of the excitatory projections from entorhinal cortex to hippocampus. However, entorhinal cortex also sends inhibitory projections, whose role in memory storage and cortico-hippocampal activity remains largely unexplored. We found that these long-range inhibitory projections enhance the specificity of contextual and object memory encoding. At the circuit level, these γ-aminobutyric acid (GABA)-releasing projections target hippocampal inhibitory neurons and thus act as a disinhibitory gate that transiently promotes the excitation of hippocampal CA1 pyramidal neurons by suppressing feedforward inhibition. This enhances the ability of CA1 pyramidal neurons to fire synaptically evoked dendritic spikes and to generate a temporally precise form of heterosynaptic plasticity. Long-range inhibition from entorhinal cortex may thus increase the precision of hippocampal-based long-term memory associations by assessing the salience of mnemonormation to the immediate sensory input. Copyright © 2016, American Association for the Advancement of Science.

Molecular sensing using monolayer floating gate, fully depleted SOI MOSFET acting as an exponential transducer.

Science.gov (United States)

Takulapalli, Bharath R

2010-02-23

Field-effect transistor-based chemical sensors fall into two broad categories based on the principle of signal transduction-chemiresistor or Schottky-type devices and MOSFET or inversion-type devices. In this paper, we report a new inversion-type device concept-fully depleted exponentially coupled (FDEC) sensor, using molecular monolayer floating gate fully depleted silicon on insulator (SOI) MOSFET. Molecular binding at the chemical-sensitive surface lowers the threshold voltage of the device inversion channel due to a unique capacitive charge-coupling mechanism involving interface defect states, causing an exponential increase in the inversion channel current. This response of the device is in opposite direction when compared to typical MOSFET-type sensors, wherein inversion current decreases in a conventional n-channel sensor device upon addition of negative charge to the chemical-sensitive device surface. The new sensor architecture enables ultrahigh sensitivity along with extraordinary selectivity. We propose the new sensor concept with the aid of analytical equations and present results from our experiments in liquid phase and gas phase to demonstrate the new principle of signal transduction. We present data from numerical simulations to further support our theory.

Fabrication and electrical characterization of a MOS memory device containing self-assembled metallic nanoparticles

Science.gov (United States)

Sargentis, Ch.; Giannakopoulos, K.; Travlos, A.; Tsamakis, D.

2007-04-01

Floating gate devices with nanoparticles embedded in dielectrics have recently attracted much attention due to the fact that these devices operate as non-volatile memories with high speed, high density and low power consumption. In this paper, memory devices containing gold (Au) nanoparticles have been fabricated using e-gun evaporation. The Au nanoparticles are deposited on a very thin SiO 2 layer and are then fully covered by a HfO 2 layer. The HfO 2 is a high- k dielectric and gives good scalability to the fabricated devices. We studied the effect of the deposition parameters to the size and the shape of the Au nanoparticles using capacitance-voltage and conductance-voltage measurements, we demonstrated that the fabricated device can indeed operate as a low-voltage memory device.

Total Ionizing Dose Influence on the Single Event Effect Sensitivity in Samsung 8Gb NAND Flash Memories

Science.gov (United States)

Edmonds, Larry D.; Irom, Farokh; Allen, Gregory R.

2017-08-01

A recent model provides risk estimates for the deprogramming of initially programmed floating gates via prompt charge loss produced by an ionizing radiation environment. The environment can be a mixture of electrons, protons, and heavy ions. The model requires several input parameters. This paper extends the model to include TID effects in the control circuitry by including one additional parameter. Parameters intended to produce conservative risk estimates for the Samsung 8 Gb SLC NAND flash memory are given, subject to some qualifications.

Clocking In Time to Gate Memory Processes: The Circadian Clock Is Part of the Ins and Outs of Memory

Directory of Open Access Journals (Sweden)

Oliver Rawashdeh

2018-01-01

Full Text Available Learning, memory consolidation, and retrieval are processes known to be modulated by the circadian (circa: about; dies: day system. The circadian regulation of memory performance is evolutionarily conserved, independent of the type and complexity of the learning paradigm tested, and not specific to crepuscular, nocturnal, or diurnal organisms. In mammals, long-term memory (LTM formation is tightly coupled to de novo gene expression of plasticity-related proteins and posttranslational modifications and relies on intact cAMP/protein kinase A (PKA/protein kinase C (PKC/mitogen-activated protein kinase (MAPK/cyclic adenosine monophosphate response element-binding protein (CREB signaling. These memory-essential signaling components cycle rhythmically in the hippocampus across the day and night and are clearly molded by an intricate interplay between the circadian system and memory. Important components of the circadian timing mechanism and its plasticity are members of the Period clock gene family (Per1, Per2. Interestingly, Per1 is rhythmically expressed in mouse hippocampus. Observations suggest important and largely unexplored roles of the clock gene protein PER1 in synaptic plasticity and in the daytime-dependent modulation of learning and memory. Here, we review the latest findings on the role of the clock gene Period 1 (Per1 as a candidate molecular and mechanistic blueprint for gating the daytime dependency of memory processing.

New AlGaN/GaN HEMTs employing both a floating gate and a field plate

International Nuclear Information System (INIS)

Lim, Jiyong; Choi, Young-Hwan; Kim, Young-Shil; Han, Min-Koo

2010-01-01

We designed and fabricated AlGaN/GaN high-electron-mobility transistors (HEMTs) employing both a floating gate (FG) and a field plate (FP), which increase the breakdown voltage of AlGaN/GaN HEMTs significantly without sacrificing forward electric characteristics. The electric field strength at the gate-drain region of the proposed AlGaN/GaN HEMT was reduced successfully due to an increase in the number of depletion region edges. The breakdown voltage of the proposed AlGaN/GaN HEMT was 1106 V, while those of the conventional devices with only an FP or FG were 688 and 828 V, respectively. The leakage current of the proposed AlGaN/GaN HEMTs was 1.68 μA under a reverse bias of -100 V while those of the conventional devices with only an FP or FG were 3.21 and 1.91 μA, respectively, under the same condition. The forward electric characteristics of the proposed and conventional AlGaN/GaN HEMTs are similar. The maximum drain current of the proposed AlGaN/GaN HEMTs was 344 mA mm -1 while those of the conventional devices with only an FP or FG were 350 and 357 mA mm -1 , respectively. The maximum transconductance of the proposed device was 102.9 mS mm -1 , while those of the conventional devices were 97.8 and 101.9 mS mm -1 . The breakdown voltage and the leakage current of the proposed device were improved considerably without sacrificing the forward electric characteristics. It should be noted that there were no additional processing steps and mask levels compared to the conventional FP process.

Tracking Real-Time Changes in Working Memory Updating and Gating with the Event-Based Eye-Blink Rate

NARCIS (Netherlands)

Rac-Lubashevsky, R.; Slagter, H.A.; Kessler, Y.

2017-01-01

Effective working memory (WM) functioning depends on the gating process that regulates the balance between maintenance and updating of WM. The present study used the event-based eye-blink rate (ebEBR), which presumably reflects phasic striatal dopamine activity, to examine how the cognitive

Zinc Cadmium Selenide Cladded Quantum Dot Based Electroluminescent and Nonvolatile Memory Devices

Science.gov (United States)

Al-Amody, Fuad H.

This dissertation presents electroluminescent (EL) and nonvolatile memory devices fabricated using pseudomorphic ZnCdSe-based cladded quantum dots (QDs). These dots were grown using our own in-school built novel reactor. The EL device was fabricated on a substrate of ITO (indium tin oxide) coated glass with the quantum dots sandwiched between anode and cathode contacts with a small barrier layer on top of the QDs. The importance of these cladded dots is to increase the quantum yield of device. This device is unique as they utilize quantum dots that are pseudomorphic (nearly lattice-matched core and the shell of the dot). In the case of floating quantum dot gate nonvolatile memory, cladded ZnCdSe quantum dots are deposited on single crystalline gate insulator (ZnMgS/ZnMgSe), which is grown using metal-organic chemical vapor deposition (MOCVD). The control gate dielectric layer of the nonvolatile memory is Si3N4 or SiO2 and is grown using plasma enhanced chemical vapor deposition (PECVD). The cladded dots are grown using an improved methodology of photo-assisted microwave plasma metal-organic chemical vapor deposition (PMP-MOCVD) enhanced reactor. The cladding composition of the core and shell of the dots was engineered by the help of ultraviolet light which changed the incorporation of zinc (and hence composition of ZnCdSe). This makes ZnxCd1--xSe-ZnyCd1--y Se QDs to have a low composition of zinc in the core than the cladding (x

An Adaptable Neuromorphic Model of Orientation Selectivity Based On Floating Gate Dynamics

Directory of Open Access Journals (Sweden)

Priti eGupta

2014-04-01

Full Text Available The biggest challenge that the neuromorphic community faces today is to build systems that can be considered truly cognitive. Adaptation and self-organization are the two basic principles that underlie any cognitive function that the brain performs. If we can replicate this behavior in hardware, we move a step closer to our goal of having cognitive neuromorphic systems. Adaptive feature selectivity is a mechanism by which nature optimizes resources so as to have greater acuity for more abundant features. Developing neuromorphic feature maps can help design generic machines that can emulate this adaptive behavior. Most neuromorphic models that have attempted to build self-organizing systems, follow the approach of modeling abstract theoretical frameworks in hardware. While this is good from a modeling and analysis perspective, it may not lead to the most efficient hardware. On the other hand, exploiting hardware dynamics to build adaptive systems rather than forcing the hardware to behave like mathematical equations, seems to be a more robust methodology when it comes to developing actual hardware for real world applications. In this paper we use a novel time-staggered Winner Take All circuit, that exploits the adaptation dynamics of floating gate transistors, to model an adaptive cortical cell that demonstrates Orientation Selectivity, a well-known biological phenomenon observed in the visual cortex. The cell performs competitive learning, refining its weights in response to input patterns resembling different oriented bars, becoming selective to a particular oriented pattern. Different analysis performed on the cell such as orientation tuning, application of abnormal inputs, response to spatial frequency and periodic patterns reveal close similarity between our cell and its biological counterpart. Embedded in a RC grid, these cells interact diffusively exhibiting cluster formation, making way for adaptively building orientation selective maps

Subattoampere current induced by single ions in silicon oxide layers of nonvolatile memory cells

International Nuclear Information System (INIS)

Cellere, G.; Paccagnella, A.; Larcher, L.; Visconti, A.; Bonanomi, M.

2006-01-01

A single ion impinging on a thin silicon dioxide layer generates a number of electron/hole pairs proportional to its linear energy transfer coefficient. Defects generated by recombination can act as a conductive path for electrons that cross the oxide barrier, thanks to a multitrap-assisted mechanism. We present data on the dependence of this phenomenon on the oxide thickness by using floating gate memory arrays. The tiny number of excess electrons stored in these devices allows for extremely high sensitivity, impossible with any direct measurement of oxide leakage current. Results are of particular interest for next generation devices

Bio Organic-Semiconductor Field-Effect Transistor (BioFET) Based on Deoxyribonucleic Acid (DNA) Gate Dielectric

Science.gov (United States)

2010-03-31

floating gate devices and metal-insulator-oxide-semiconductor (MIOS) devices. First attempts to use polarizable gate insulators in combination with...bulk of the semiconductor (ii) Due to the polarizable gate dielectric (iii) dipole polarization and (iv)electret effect due to mobile ions in the...characterization was carried out under an argon environment inside the glove box. An Agilent model E5273A with a two source-measurement unit instrument was

Cognitive mechanisms associated with auditory sensory gating

Science.gov (United States)

Jones, L.A.; Hills, P.J.; Dick, K.M.; Jones, S.P.; Bright, P.

2016-01-01

Sensory gating is a neurophysiological measure of inhibition that is characterised by a reduction in the P50 event-related potential to a repeated identical stimulus. The objective of this work was to determine the cognitive mechanisms that relate to the neurological phenomenon of auditory sensory gating. Sixty participants underwent a battery of 10 cognitive tasks, including qualitatively different measures of attentional inhibition, working memory, and fluid intelligence. Participants additionally completed a paired-stimulus paradigm as a measure of auditory sensory gating. A correlational analysis revealed that several tasks correlated significantly with sensory gating. However once fluid intelligence and working memory were accounted for, only a measure of latent inhibition and accuracy scores on the continuous performance task showed significant sensitivity to sensory gating. We conclude that sensory gating reflects the identification of goal-irrelevant information at the encoding (input) stage and the subsequent ability to selectively attend to goal-relevant information based on that previous identification. PMID:26716891

Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3 and ferroelectric polymer

International Nuclear Information System (INIS)

Yoon, Sung-Min; Yang, Shin-Hyuk; Ko Park, Sang-Hee; Jung, Soon-Won; Cho, Doo-Hee; Byun, Chun-Won; Kang, Seung-Youl; Hwang, Chi-Sun; Yu, Byoung-Gon

2009-01-01

Poly(vinylidene fluoride trifluoroethylene) and ZnO were employed for nonvolatile memory thin film transistors as ferroelectric gate insulator and oxide semiconducting channel layers, respectively. It was proposed that the thickness of the ZnO layer be carefully controlled for realizing the lower programming voltage, because the serially connected capacitor by the formation of a fully depleted ZnO channel had a critical effect on the off programming voltage. The fabricated memory transistor with Al/P(VDF-TrFE) (80 nm)/Al 2 O 3 (4 nm)/ZnO (5 nm) exhibits encouraging behaviour such as a memory window of 3.8 V at the gate voltage of -10 to 12 V, and 10 7 on/off ratio, and a gate leakage current of 10 -11 A.

Hardware system of parallel processing for fast CT image reconstruction based on circular shifting float memory architecture

International Nuclear Information System (INIS)

Wang Shi; Kang Kejun; Wang Jingjin

1995-01-01

Computerized Tomography (CT) is expected to become an inevitable diagnostic technique in the future. However, the long time required to reconstruct an image has been one of the major drawbacks associated with this technique. Parallel process is one of the best way to solve this problem. This paper gives the architecture and hardware design of PIRS-4 (4-processor Parallel Image Reconstruction System) which is a parallel processing system for fast 3D-CT image reconstruction by circular shifting float memory architecture. It includes structure and component of the system, the design of cross bar switch and details of control model. The test results are described

Development of anti-biofouling methods for gate facilities

International Nuclear Information System (INIS)

Fukuoka, Mari; Akamine, Kenichi; Iai, Yuuichi; Takatoo, Norihiro; Fukushima, Noriaki

2016-01-01

In the maintenance and management of gate facilities, a large sum of money and labor are required to remove and clean organisms that attach themselves to the facilities. That is why we developed two anti-biofouling systems, one that uses a weak electric current and another that uses ultrasonic waves. We carried out basic examinations and actual environment examinations to verify the effects of these methods. As a result, it has been confirmed that these methods effectively anti-foul the parts they are applied to, and that they can be used on gate facilities. In the future, we will evaluate their adaptability to aqueducts, such as those used in thermal and nuclear power plants, and marine structures, such as floating breakwaters, in addition to gate facilities. (author)

Nonvolatile memory thin film transistors using CdSe/ZnS quantum dot-poly(methyl methacrylate) composite layer formed by a two-step spin coating technique

Science.gov (United States)

Chen, Ying-Chih; Huang, Chun-Yuan; Yu, Hsin-Chieh; Su, Yan-Kuin

2012-08-01

The nonvolatile memory thin film transistors (TFTs) using a core/shell CdSe/ZnS quantum dot (QD)-poly(methyl methacrylate) (PMMA) composite layer as the floating gate have been demonstrated, with the device configuration of n+-Si gate/SiO2 insulator/QD-PMMA composite layer/pentacene channel/Au source-drain being proposed. To achieve the QD-PMMA composite layer, a two-step spin coating technique was used to successively deposit QD-PMMA composite and PMMA on the insulator. After the processes, the variation of crystal quality and surface morphology of the subsequent pentacene films characterized by x-ray diffraction spectra and atomic force microscopy was correlated to the two-step spin coating. The crystalline size of pentacene was improved from 147.9 to 165.2 Å, while the degree of structural disorder was decreased from 4.5% to 3.1% after the adoption of this technique. In pentacene-based TFTs, the improvement of the performance was also significant, besides the appearances of strong memory characteristics. The memory behaviors were attributed to the charge storage/discharge effect in QD-PMMA composite layer. Under the programming and erasing operations, programmable memory devices with the memory window (Δ Vth) = 23 V and long retention time were obtained.

1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors

Directory of Open Access Journals (Sweden)

Guo-Neng Lu

2009-01-01

Full Text Available We present a single-transistor pixel for CMOS image sensors (CIS. It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation into this 1T pixel structure includes modeling to obtain analytical description of conversion gain. Model validation has been done by comparing theoretical predictions and experimental results. On the other hand, the 1T pixel structure has been implemented in different configurations, including rectangular-gate and ring-gate designs, and variations of oxidation parameters for the fabrication process. The pixel characteristics are presented and discussed.

1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors.

Science.gov (United States)

Lu, Guo-Neng; Tournier, Arnaud; Roy, François; Deschamps, Benoît

2009-01-01

We present a single-transistor pixel for CMOS image sensors (CIS). It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation into this 1T pixel structure includes modeling to obtain analytical description of conversion gain. Model validation has been done by comparing theoretical predictions and experimental results. On the other hand, the 1T pixel structure has been implemented in different configurations, including rectangular-gate and ring-gate designs, and variations of oxidation parameters for the fabrication process. The pixel characteristics are presented and discussed.

Dimensional effects and scalability of Meta-Stable Dip (MSD) memory effect for 1T-DRAM SOI MOSFETs

Science.gov (United States)

Hubert, A.; Bawedin, M.; Cristoloveanu, S.; Ernst, T.

2009-12-01

The difficult scaling of bulk Dynamic Random Access Memories (DRAMs) has led to various concepts of capacitor-less single-transistor (1T) architectures based on SOI transistor floating-body effects. Amongst them, the Meta-Stable Dip RAM (MSDRAM), which is a double-gate Fully Depleted SOI transistor, exhibits attractive performances. The Meta-Stable Dip effect results from the reduced junction leakage current and the long carrier generation lifetime in thin silicon film transistors. In this study, various devices with different gate lengths, widths and silicon film thicknesses have been systematically explored, revealing the impact of transistor dimensions on the MSD effect. These experimental results are discussed and validated by two-dimensional numerical simulations. It is found that MSD is maintained for small dimensions even in standard SOI MOSFETs, although specific optimizations are expected to enhance MSDRAM performances.

MASMA: a versatile multifunctional unit (gated window amplifier, analog memory, and height-to-time converter)

International Nuclear Information System (INIS)

Goursky, V.; Thenes, P.

1969-01-01

This multipurpose unit is designed to accomplish one of the following functions: - gated window amplifier, - Analog memory and - Amplitude-to-time converter. The first function is mainly devoted to improve the poor resolution of pulse-height analyzers with a small number of channels. The analog memory, a new function in the standard range of plug-in modules, is capable of performing a number of operations: 1) fixed delay, or variable delay dependent on an external parameter (application to the analog processing of non-coincident pulses), 2) de-randomiser to increase the efficiency of the pulse height analysis in a spectrometry experiment, 3) linear multiplexer to allow an analyser to serve as many spectrometry devices as memory elements that it possesses. Associated with a coding scaler, this unit, if used as a amplitude-to-time converter, constitutes a Wilkinson A.D.C with a capability of 10 bits (or more) and with a 100 MHz clock frequency. (authors) [fr

Instantons in Self-Organizing Logic Gates

Science.gov (United States)

Bearden, Sean R. B.; Manukian, Haik; Traversa, Fabio L.; Di Ventra, Massimiliano

2018-03-01

Self-organizing logic is a recently suggested framework that allows the solution of Boolean truth tables "in reverse"; i.e., it is able to satisfy the logical proposition of gates regardless to which terminal(s) the truth value is assigned ("terminal-agnostic logic"). It can be realized if time nonlocality (memory) is present. A practical realization of self-organizing logic gates (SOLGs) can be done by combining circuit elements with and without memory. By employing one such realization, we show, numerically, that SOLGs exploit elementary instantons to reach equilibrium points. Instantons are classical trajectories of the nonlinear equations of motion describing SOLGs and connect topologically distinct critical points in the phase space. By linear analysis at those points, we show that these instantons connect the initial critical point of the dynamics, with at least one unstable direction, directly to the final fixed point. We also show that the memory content of these gates affects only the relaxation time to reach the logically consistent solution. Finally, we demonstrate, by solving the corresponding stochastic differential equations, that, since instantons connect critical points, noise and perturbations may change the instanton trajectory in the phase space but not the initial and final critical points. Therefore, even for extremely large noise levels, the gates self-organize to the correct solution. Our work provides a physical understanding of, and can serve as an inspiration for, models of bidirectional logic gates that are emerging as important tools in physics-inspired, unconventional computing.

Volatile and Nonvolatile Characteristics of Asymmetric Dual-Gate Thyristor RAM with Vertical Structure.

Science.gov (United States)

Kim, Hyun-Min; Kwon, Dae Woong; Kim, Sihyun; Lee, Kitae; Lee, Junil; Park, Euyhwan; Lee, Ryoongbin; Kim, Hyungjin; Kim, Sangwan; Park, Byung-Gook

2018-09-01

In this paper, the volatile and nonvolatile characteristics of asymmetric dual-gate thyristor random access memory (TRAM) are investigated using the technology of a computer-aided design (TCAD) simulation. Owing to the use of two independent gates having different gate dielectric layers, volatile and nonvolatile memory functions can be realized in a single device. The first gate with a silicon oxide layer controls the one-transistor dynamic random access memory (1T-DRAM) characteristics of the device. From the simulation results, a rapid write speed (107) can be achieved. The second gate, whose dielectric material is composed of oxide/nitride/oxide (O/N/O) layers, is used to implement the nonvolatile property by trapping charges in the nitride layer. In addition, this offers an advantage when processing the 3D-stack memory application, as the device has a vertical channel structure with polycrystalline silicon.

Write/erase time of nanoseconds in quantum dot based memory structures

International Nuclear Information System (INIS)

Nowozin, Tobias; Marent, Andreas; Geller, Martin; Bimberg, Dieter

2008-01-01

We have developed a novel charge-storage memory concept based on III-V semiconductor quantum dots (QDs) which has a number of fundamental advantages over conventional Si/SiO 2 floating gate memories (Flash): material-tunable and voltage-tunable barriers for improved intrinsic speed and/or storage time and high endurance. To investigate the potential of this new memory concept we have determined intrinsic write/erase times in memory structures based on InAs/GaAs and GaSb/GaAs QDs using capacitance-voltage spectroscopy. We measured a write time below 15 ns independent of the localization energy (i.e. the storage time) of the QDs. This write time is more than three orders of magnitude faster than in a Flash cell and already below the write time of a dynamic random access memory (DRAM). The erase time was determined to be 42 ns for InAs/GaAs QDs and 1.5 ms for GaSb/GaAs QDs for applied electric fields of 166 kV/cm and 206 kV/cm, respectively. From these results we derive an erase time of 1 ns in GaSb QDs for an electric field of 330 kV/cm

A Retina-Like Dual Band Organic Photosensor Array for Filter-Free Near-Infrared-to-Memory Operations.

Science.gov (United States)

Wang, Hanlin; Liu, Hongtao; Zhao, Qiang; Ni, Zhenjie; Zou, Ye; Yang, Jie; Wang, Lifeng; Sun, Yanqiu; Guo, Yunlong; Hu, Wenping; Liu, Yunqi

2017-08-01

Human eyes use retina photoreceptor cells to absorb and distinguish photons from different wavelengths to construct an image. Mimicry of such a process and extension of its spectral response into the near-infrared (NIR) is indispensable for night surveillance, retinal prosthetics, and medical imaging applications. Currently, NIR organic photosensors demand optical filters to reduce visible interference, thus making filter-free and anti-visible NIR imaging a challenging task. To solve this limitation, a filter-free and conformal, retina-inspired NIR organic photosensor is presented. Featuring an integration of photosensing and floating-gate memory modules, the device possesses an acute color distinguishing capability. In general, the retina-like photosensor transduces NIR (850 nm) into nonvolatile memory and acts as a dynamic photoswitch under green light (550 nm). In doing this, a filter-free but color-distinguishing photosensor is demonstrated that selectively converts NIR optical signals into nonvolatile memory. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nonvolatile memory thin-film transistors using biodegradable chicken albumen gate insulator and oxide semiconductor channel on eco-friendly paper substrate.

Science.gov (United States)

Kim, So-Jung; Jeon, Da-Bin; Park, Jung-Ho; Ryu, Min-Ki; Yang, Jong-Heon; Hwang, Chi-Sun; Kim, Gi-Heon; Yoon, Sung-Min

2015-03-04

Nonvolatile memory thin-film transistors (TFTs) fabricated on paper substrates were proposed as one of the eco-friendly electronic devices. The gate stack was composed of chicken albumen gate insulator and In-Ga-Zn-O semiconducting channel layers. All the fabrication processes were performed below 120 °C. To improve the process compatibility of the synthethic paper substrate, an Al2O3 thin film was introduced as adhesion and barrier layers by atomic layer deposition. The dielectric properties of biomaterial albumen gate insulator were also enhanced by the preparation of Al2O3 capping layer. The nonvolatile bistabilities were realized by the switching phenomena of residual polarization within the albumen thin film. The fabricated device exhibited a counterclockwise hysteresis with a memory window of 11.8 V, high on/off ratio of approximately 1.1 × 10(6), and high saturation mobility (μsat) of 11.5 cm(2)/(V s). Furthermore, these device characteristics were not markedly degraded even after the delamination and under the bending situration. When the curvature radius was set as 5.3 cm, the ION/IOFF ratio and μsat were obtained to be 5.9 × 10(6) and 7.9 cm(2)/(V s), respectively.

Gate-first integration of tunable work function metal gates of different thicknesses into high-k metal gates CMOS FinFETs for multi- VTh engineering

KAUST Repository

Hussain, Muhammad Mustafa; Smith, Casey Eben; Harris, Harlan Rusty; Young, Chadwin; Tseng, Hsinghuang; Jammy, Rajarao

2010-01-01

Gate-first integration of tunable work function metal gates of different thicknesses (320 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (VTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering ∼ 40 mV/V), nearly symmetric VTh, low T inv(∼ 1.4 nm), and high Ion(∼780μAμm) for N/PMOS without any intentional strain enhancement. © 2006 IEEE.

Gate-first integration of tunable work function metal gates of different thicknesses into high-k metal gates CMOS FinFETs for multi- VTh engineering

KAUST Repository

Hussain, Muhammad Mustafa

2010-03-01

Gate-first integration of tunable work function metal gates of different thicknesses (320 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (VTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering ∼ 40 mV/V), nearly symmetric VTh, low T inv(∼ 1.4 nm), and high Ion(∼780μAμm) for N/PMOS without any intentional strain enhancement. © 2006 IEEE.

MacLiammóir's minstrel and Johnston's morality : cultural memories of the Easter Rising at the Dublin Gate Theatre

NARCIS (Netherlands)

van den Beuken, Ruud

This article explores how Micheál MacLiammóir and Denis Johnston attempted to perform cultural memories of the Easter Rising at the Dublin Gate Theatre and thereby articulated their respective views on a colonial past that had to be reassessed anew, on the one hand, and a postcolonial future that

Towards Interactive Steering of a Very Large Floating Structure Code by Using HPC Parallelisation Strategies

KAUST Repository

Frisch, Jerome

2012-09-01

Very large floating structures (VLFSs) have been used for broad applications such as floating storage facilities, floating piers, floating bridges, floating airports, entertainment facilities, even habitation, and other purposes. Owing to its small bending rigidity, VLFS deforms elastically when subjected to wave action. This elastic deformation due to wave is called hydro elastic response and it can be obtained by solving the interaction between the surface wave and the floating structure in the frequency domain. In solving the fluid-structure interaction, the floating structure can be modelled by applying the finite element method, whereas the fluid part may be analyzed by using the Green\\'s function method. When using the Green\\'s function which satisfies the boundary condition on the free-surface, the sea bottom and that at infinite distance from the floating structure, the unknown parameters to be determined for the fluid part can be minimized to be only those associated with the wetted surface of the floating structure. However, in the evaluation of the Green\\'s function, extensive computation time O(N2) is needed (N is the number of unknowns). Therefore, acceleration techniques are necessary to tackle the computational complexity. Nowadays, standard multi-core office PCs are already quite powerful if all the cores can be used efficiently. This paper will show different parallelisation strategies for speeding up the Green\\'s function computation. A shared memory based implementation as well as a distributed memory concept will be analysed regarding speed-up and efficiency. For large computations, batch jobs can be used to compute detailed results in high resolution on a large computational cluster or supercomputer. Different speed-up computations on clusters will be included for showing strong speed-up results. © 2012 IEEE.

Deep Gate Recurrent Neural Network

Science.gov (United States)

2016-11-22

and Fred Cummins. Learning to forget: Continual prediction with lstm . Neural computation, 12(10):2451–2471, 2000. Alex Graves. Generating sequences...DSGU) and Simple Gated Unit (SGU), which are structures for learning long-term dependencies. Compared to traditional Long Short-Term Memory ( LSTM ) and...Gated Recurrent Unit (GRU), both structures require fewer parameters and less computation time in sequence classification tasks. Unlike GRU and LSTM

Measurements of a vortex transitional ndro Josephson memory cell

International Nuclear Information System (INIS)

Tahara, S.; Ishida, I.; Hidaka, M.; Nagasawa, S.; Ajisawa, Y.; Wada, Y.

1988-01-01

A novel vortex transitional NDRO Jospehson memory cell has been successfully fabricated and tested. The memory cell consists of two superconducting loops and a two-junction interferometer gate as a sense gate. The superconducting loop contains one Josephson junction and inductances, and stores single flux quantum. The memory cell employs vortex transitions in the superconducting loops for writing and reading data. The memory cell chips have been fabricated using niobium planarization process. The +-21 percent address signal current margin and the +-33 percent sense gate current margin have been obtained experimentally. The memory operation of the cell driven by the two-junction interferometer gates has been accurately demonstrated

Memory characteristics of Au nanocrystals embedded in metal-oxide-semiconductor structure by using atomic-layer-deposited Al2O3 as control oxide

International Nuclear Information System (INIS)

Wang, C.-C.; Chiou, Y.-K.; Chang, C.-H.; Tseng, J.-Y.; Wu, L.-J.; Chen, C.-Y.; Wu, T.-B.

2007-01-01

The nonvolatile memory characteristics of metal-oxide-semiconductor (MOS) structures containing Au nanocrystals in the Al 2 O 3 /SiO 2 matrix were studied. In this work, we have demonstrated that the use of Al 2 O 3 as control oxide prepared by atomic-layer-deposition enhances the erase speed of the MOS capacitors. A giant capacitance-voltage hysteresis loop and a very short erase time which is lower than 1 ms can be obtained. Compared with the conventional floating-gate electrically erasable programmable read-only memories, the erase speed was promoted drastically. In addition, very low leakage current and large turn-around voltage resulting from electrons or holes stored in the Au nanocrystals were found in the current-voltage relation of the MOS capacitors

Analysis of the Effect of Channel Leakage on Design, Characterization and Modelling of a High Voltage Pseudo-Floating Gate Sensor-Front-End

Directory of Open Access Journals (Sweden)

Luca Marchetti

2017-10-01

Full Text Available In this paper, we analyze the effects of channel leakage on the design, modelling and characterization of a high voltage pseudo-floating gate amplifier (PFGA used as sensor front-end. Leakages are known as a major challenge in new modern CMOS technologies, which are used to bias the PFGA, and consequently affect the behavior of the amplifier. As high voltages are desired for actuation of many types of resonating sensors, especially in ultrasound applications, PFGA implemented in high voltage and low leakage technologies, such as older CMOS fabrication processes or power MOSFET can be the only option. The challenge with these technologies used to implement the PFGA is that the leakages are very low, which affect the biasing of the floating gate. However, the numerous advantages of this type of amplifier, implemented with modern fabrication processes, such as high flexibility, compactness, low power consumption , etc. encouraged the authors to research about this topic. This work provides analysis of the working principle and the design rules for this amplifier, emphasizing the major differences between PFGA implemented in low leakage and high leakage technologies. Static and dynamic analysis, input offset and non-linearity of the PFGA are the main topics of this article. Three different design approaches are presented in this paper, in order to provide a more general design procedure and offset compensation for any low leakage PFGA. The amplifier has been simulated in AMS- 0 . 35 μ m CMOS models for supply voltages of 5 V and 10 V. Two prototypes have been realized to verify the validity of the modelling and the simulation results. Both devices have been realized by using discrete components and mounted on a printed circuit board. In this work, MOSFETs are realized by using commercial IC CD4007UB and 2N7000. Measurement results of the first prototype proved that the implementation of a low leakage PFGA is possible after that the input offset of

Leaky Integrate and Fire Neuron by Charge-Discharge Dynamics in Floating-Body MOSFET.

Science.gov (United States)

Dutta, Sangya; Kumar, Vinay; Shukla, Aditya; Mohapatra, Nihar R; Ganguly, Udayan

2017-08-15

Neuro-biology inspired Spiking Neural Network (SNN) enables efficient learning and recognition tasks. To achieve a large scale network akin to biology, a power and area efficient electronic neuron is essential. Earlier, we had demonstrated an LIF neuron by a novel 4-terminal impact ionization based n+/p/n+ with an extended gate (gated-INPN) device by physics simulation. Excellent improvement in area and power compared to conventional analog circuit implementations was observed. In this paper, we propose and experimentally demonstrate a compact conventional 3-terminal partially depleted (PD) SOI- MOSFET (100 nm gate length) to replace the 4-terminal gated-INPN device. Impact ionization (II) induced floating body effect in SOI-MOSFET is used to capture LIF neuron behavior to demonstrate spiking frequency dependence on input. MHz operation enables attractive hardware acceleration compared to biology. Overall, conventional PD-SOI-CMOS technology enables very-large-scale-integration (VLSI) which is essential for biology scale (~10 11 neuron based) large neural networks.

The Role of Anterior Nuclei of the Thalamus: A Subcortical Gate in Memory Processing: An Intracerebral Recording Study.

Directory of Open Access Journals (Sweden)

Klára Štillová

Full Text Available To study the involvement of the anterior nuclei of the thalamus (ANT as compared to the involvement of the hippocampus in the processes of encoding and recognition during visual and verbal memory tasks.We studied intracerebral recordings in patients with pharmacoresistent epilepsy who underwent deep brain stimulation (DBS of the ANT with depth electrodes implanted bilaterally in the ANT and compared the results with epilepsy surgery candidates with depth electrodes implanted bilaterally in the hippocampus. We recorded the event-related potentials (ERPs elicited by the visual and verbal memory encoding and recognition tasks.P300-like potentials were recorded in the hippocampus by visual and verbal memory encoding and recognition tasks and in the ANT by the visual encoding and visual and verbal recognition tasks. No significant ERPs were recorded during the verbal encoding task in the ANT. In the visual and verbal recognition tasks, the P300-like potentials in the ANT preceded the P300-like potentials in the hippocampus.The ANT is a structure in the memory pathway that processes memory information before the hippocampus. We suggest that the ANT has a specific role in memory processes, especially memory recognition, and that memory disturbance should be considered in patients with ANT-DBS and in patients with ANT lesions. ANT is well positioned to serve as a subcortical gate for memory processing in cortical structures.

The Role of Anterior Nuclei of the Thalamus: A Subcortical Gate in Memory Processing: An Intracerebral Recording Study.

Science.gov (United States)

Štillová, Klára; Jurák, Pavel; Chládek, Jan; Chrastina, Jan; Halámek, Josef; Bočková, Martina; Goldemundová, Sabina; Říha, Ivo; Rektor, Ivan

2015-01-01

To study the involvement of the anterior nuclei of the thalamus (ANT) as compared to the involvement of the hippocampus in the processes of encoding and recognition during visual and verbal memory tasks. We studied intracerebral recordings in patients with pharmacoresistent epilepsy who underwent deep brain stimulation (DBS) of the ANT with depth electrodes implanted bilaterally in the ANT and compared the results with epilepsy surgery candidates with depth electrodes implanted bilaterally in the hippocampus. We recorded the event-related potentials (ERPs) elicited by the visual and verbal memory encoding and recognition tasks. P300-like potentials were recorded in the hippocampus by visual and verbal memory encoding and recognition tasks and in the ANT by the visual encoding and visual and verbal recognition tasks. No significant ERPs were recorded during the verbal encoding task in the ANT. In the visual and verbal recognition tasks, the P300-like potentials in the ANT preceded the P300-like potentials in the hippocampus. The ANT is a structure in the memory pathway that processes memory information before the hippocampus. We suggest that the ANT has a specific role in memory processes, especially memory recognition, and that memory disturbance should be considered in patients with ANT-DBS and in patients with ANT lesions. ANT is well positioned to serve as a subcortical gate for memory processing in cortical structures.

Memory characteristics and tunneling mechanism of Ag nanocrystal embedded HfAlOx films on Si83Ge17/Si substrate

International Nuclear Information System (INIS)

Qiu, X.Y.; Zhou, G.D.; Li, J.; Chen, Y.; Wang, X.H.; Dai, J.Y.

2014-01-01

A nano-floating gate memory capacitor consisting of a stack of 3 nm-thick HfAlO x tunneling layer, self-organized Ag nanocrystals (NCs), and a 6 nm-thick HfAlO x control layer, has been fabricated on compressively strained p-type Si 83 Ge 17 /Si(100) substrates by radio-frequency magnetron sputtering. The Ag-NCs with a size of 5–8 nm and a density of 5.7 × 10 12 /cm 2 are well dispersed in the amorphous HfAlO x matrix. Counterclockwise hysteresis capacitance–voltage curve with a memory window of ∼ 2 V, corresponding to a charge storage density of about 1.3 × 10 13 electrons/cm 2 , is observed in this memory capacitor. The accumulation capacitance of this memory capacitor has no obvious decrease during electrical stressing process within a period of 10 4 s, but the memory window gradually becomes narrower, and only 54% stored charges are retained in the Ag-NCs after 10 5 s stressing. Defect-enhanced Poole–Frenkel tunneling is found to be responsible for the degradation of memory properties. - Highlights: • Dispersed Ag nanocrystals act as memory nodes. • Realize a 2 V memory window • Illustrate the memory degradation process • Identify a defect-enhanced tunneling mechanism

Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs

International Nuclear Information System (INIS)

Luo Jie-Xin; Chen Jing; Zhou Jian-Hua; Wu Qing-Qing; Chai Zhan; Yu Tao; Wang Xi

2012-01-01

The hysteresis effect in the output characteristics, originating from the floating body effect, has been measured in partially depleted (PD) silicon-on-insulator (SOI) MOSFETs at different back-gate biases. I D hysteresis has been developed to clarify the hysteresis characteristics. The fabricated devices show the positive and negative peaks in the I D hysteresis. The experimental results show that the I D hysteresis is sensitive to the back gate bias in 0.13-μm PD SOI MOSFETs and does not vary monotonously with the back-gate bias. Based on the steady-state Shockley-Read-Hall (SRH) recombination theory, we have successfully interpreted the impact of the back-gate bias on the hysteresis effect in PD SOI MOSFETs. (condensed matter: structural, mechanical, and thermal properties)

MacLiammóir’s Minstrel and Johnston’s Morality: Cultural Memories of the Easter Rising at the Dublin Gate Theatre

NARCIS (Netherlands)

Beuken, R.H. van den

2015-01-01

This article explores how Micheál MacLiammóir and Denis Johnston attempted to perform cultural memories of the Easter Rising at the Dublin Gate Theatre and thereby articulated their respective views on a colonial past that had to be reassessed anew, on the one hand, and a postcolonial future that

Bilateral Floating Hip and Floating Knee: a Rare Complex Injury ...

African Journals Online (AJOL)

We report a rare complex injury of a 45-year-old man who sustained a bilateral floating hip and floating knee and hospitalised in our service six days after a traffic accident. The floating knees were open type III and II of Cauchoix score in phase of suppuration. He also presented with a floating ankle on the right side.

Investigation of a new low cost and low consumption single poly-silicon memory

Directory of Open Access Journals (Sweden)

Patrick Calenzo

2010-10-01

Full Text Available In this paper is presented an investigation on a new low cost and voltage consumption single poly-silicon memory cell for passive RFID (Radio Frequency IDentificationapplications. This structure is low cost due to its single poly-silicon design. This memory cell has two particularities : the first one is that no deported capacitor is necessary to program this cell which allows to reduce the structure size to 1.1μm². The second one is the way the cell is erased. A Zener diode is used to generate carriers in order to be injected into the floating gate. This Zener diode is one of the key points for the functionality that has to be validated with some electrical trials. These trials permit to integrate and use the Zener diodes measured in simulations of the complete memory cell. This is done to validate the best candidate between the Zener diodes used for the cell and highlight the efficiency in consumption and rapidity to erase the cell. Besides, the writing and the reading cases are simulated in order to show the low consumption required by the cell during these phases.

Optical quantum memory

Science.gov (United States)

Lvovsky, Alexander I.; Sanders, Barry C.; Tittel, Wolfgang

2009-12-01

Quantum memory is essential for the development of many devices in quantum information processing, including a synchronization tool that matches various processes within a quantum computer, an identity quantum gate that leaves any state unchanged, and a mechanism to convert heralded photons to on-demand photons. In addition to quantum computing, quantum memory will be instrumental for implementing long-distance quantum communication using quantum repeaters. The importance of this basic quantum gate is exemplified by the multitude of optical quantum memory mechanisms being studied, such as optical delay lines, cavities and electromagnetically induced transparency, as well as schemes that rely on photon echoes and the off-resonant Faraday interaction. Here, we report on state-of-the-art developments in the field of optical quantum memory, establish criteria for successful quantum memory and detail current performance levels.

Ipsilateral Floating Hip and Floating Knee – A Rare Entity

Directory of Open Access Journals (Sweden)

Yashavantha Kumar

2013-04-01

Full Text Available Introduction: Ipsilateral floating hip and floating knee are very rare injuries. These injuries so uncommon that only three cases of similar kind have been reported. These injuries are due to high velocity injuries following motor vehicle accidents. Management of such complex injuries is a challenging task even in experienced hands as there are no standard treatment guidelines for such fractures. Case Report: We hereby report a 20 yr old male who sustained ipsilateral floating hip and ipsilateral floating knee injuries following motor vehicle accident. Patient was stabilized initially and later taken up for surgery. Patient was treated with interlocking nail for femur and tibia in the same sitting whereas acetabulam fracture was managed conservatively. At five months all the fractures united well with restoration of good range of motion in both hip and knee. Conclusion: Ipsilateral floating knee and floating hip are very rare injuries seen following high velocity motor vehicle accidents. There are no standard guidelines for treatment of those fractures as only a few cases of similar kind have been reported in literature. Early fixation and aggressive mobilization ensures fracture union and fewer complications. Keywords: Floating hip, Floating Knee, Ipsilateral.

The use of ZFP lossy floating point data compression in tornado-resolving thunderstorm simulations

Science.gov (United States)

Orf, L.

2017-12-01

In the field of atmospheric science, numerical models are used to produce forecasts of weather and climate and serve as virtual laboratories for scientists studying atmospheric phenomena. In both operational and research arenas, atmospheric simulations exploiting modern supercomputing hardware can produce a tremendous amount of data. During model execution, the transfer of floating point data from memory to the file system is often a significant bottleneck where I/O can dominate wallclock time. One way to reduce the I/O footprint is to compress the floating point data, which reduces amount of data saved to the file system. In this presentation we introduce LOFS, a file system developed specifically for use in three-dimensional numerical weather models that are run on massively parallel supercomputers. LOFS utilizes the core (in-memory buffered) HDF5 driver and includes compression options including ZFP, a lossy floating point data compression algorithm. ZFP offers several mechanisms for specifying the amount of lossy compression to be applied to floating point data, including the ability to specify the maximum absolute error allowed in each compressed 3D array. We explore different maximum error tolerances in a tornado-resolving supercell thunderstorm simulation for model variables including cloud and precipitation, temperature, wind velocity and vorticity magnitude. We find that average compression ratios exceeding 20:1 in scientifically interesting regions of the simulation domain produce visually identical results to uncompressed data in visualizations and plots. Since LOFS splits the model domain across many files, compression ratios for a given error tolerance can be compared across different locations within the model domain. We find that regions of high spatial variability (which tend to be where scientifically interesting things are occurring) show the lowest compression ratios, whereas regions of the domain with little spatial variability compress

A High-Performance Optical Memory Array Based on Inhomogeneity of Organic Semiconductors.

Science.gov (United States)

Pei, Ke; Ren, Xiaochen; Zhou, Zhiwen; Zhang, Zhichao; Ji, Xudong; Chan, Paddy Kwok Leung

2018-03-01

Organic optical memory devices keep attracting intensive interests for diverse optoelectronic applications including optical sensors and memories. Here, flexible nonvolatile optical memory devices are developed based on the bis[1]benzothieno[2,3-d;2',3'-d']naphtho[2,3-b;6,7-b']dithiophene (BBTNDT) organic field-effect transistors with charge trapping centers induced by the inhomogeneity (nanosprouts) of the organic thin film. The devices exhibit average mobility as high as 7.7 cm 2 V -1 s -1 , photoresponsivity of 433 A W -1 , and long retention time for more than 6 h with a current ratio larger than 10 6 . Compared with the standard floating gate memory transistors, the BBTNDT devices can reduce the fabrication complexity, cost, and time. Based on the reasonable performance of the single device on a rigid substrate, the optical memory transistor is further scaled up to a 16 × 16 active matrix array on a flexible substrate with operating voltage less than 3 V, and it is used to map out 2D optical images. The findings reveal the potentials of utilizing [1]benzothieno[3,2-b][1]benzothiophene (BTBT) derivatives as organic semiconductors for high-performance optical memory transistors with a facile structure. A detailed study on the charge trapping mechanism in the derivatives of BTBT materials is also provided, which is closely related to the nanosprouts formed inside the organic active layer. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Artisanal fishing net float loss and a proposal for a float design solution

Directory of Open Access Journals (Sweden)

Paulo de Tarso Chaves

2016-03-01

Full Text Available Abstract Plastic floats from fishing nets are commonly found washed up on beaches in southern Brazil. They are usually broken and show signs of having been repaired. Characteristics of floats and interviews with fishermen suggest two main causes of float loss. First, collisions between active gear, bottom trawl nets for shrimp, and passive gear, drift nets for fish, destroy nets and release fragments of them, including floats. Second, the difficulty with which floats are inserted on the float rope of the nets when they are used near the surface. Floats are inserted to replace damaged or lost floats, or they may be removed if it is desired that the nets be used in deeper waters. Floats may thus be poorly fixed to the cables and lost. Here a new float design that offers greater safety in use and for the replacement of floats is described and tested.

Ontogeny of sensorimotor gating and short-term memory processing throughout the adolescent period in rats

Directory of Open Access Journals (Sweden)

Anja A. Goepfrich

2017-06-01

Full Text Available Adolescence and puberty are highly susceptible developmental periods during which the neuronal organization and maturation of the brain is completed. The endocannabinoid (eCB system, which is well known to modulate cognitive processing, undergoes profound and transient developmental changes during adolescence. With the present study we were aiming to examine the ontogeny of cognitive skills throughout adolescence in male rats and clarify the potential modulatory role of CB1 receptor signalling. Cognitive skills were assessed repeatedly every 10th day in rats throughout adolescence. All animals were tested for object recognition memory and prepulse inhibition of the acoustic startle reflex. Although cognitive performance in short-term memory as well as sensorimotor gating abilities were decreased during puberty compared to adulthood, both tasks were found to show different developmental trajectories throughout adolescence. A low dose of the CB1 receptor antagonist/inverse agonist SR141716 was found to improve recognition memory specifically in pubertal animals while not affecting behavioral performance at other ages tested. The present findings demonstrate that the developmental trajectory of cognitive abilities does not occur linearly for all cognitive processes and is strongly influenced by pubertal maturation. Developmental alterations within the eCB system at puberty onset may be involved in these changes in cognitive processing.

An ultra-low-power area-efficient non-volatile memory in a 0.18 μm single-poly CMOS process for passive RFID tags

International Nuclear Information System (INIS)

Jia Xiaoyun; Feng Peng; Zhang Shengguang; Wu Nanjian; Zhao Baiqin; Liu Su

2013-01-01

This paper presents an ultra-low-power area-efficient non-volatile memory (NVM) in a 0.18 μm single-poly standard CMOS process for passive radio frequency identification (RFID) tags. In the memory cell, a novel low-power operation method is proposed to realize bi-directional Fowler—Nordheim tunneling during write operation. Furthermore, the cell is designed with PMOS transistors and coupling capacitors to minimize its area. In order to improve its reliability, the cell consists of double floating gates to store the data, and the 1 kbit NVM was implemented in a 0.18 μm single-poly standard CMOS process. The area of the memory cell and 1 kbit memory array is 96 μm 2 and 0.12 mm 2 , respectively. The measured results indicate that the program/erase voltage ranges from 5 to 6 V The power consumption of the read/write operation is 0.19 μW/0.69 μW at a read/write rate of (268 kb/s)/(3.0 kb/s). (semiconductor integrated circuits)

Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO2 for non-volatile memory device

International Nuclear Information System (INIS)

Stepina, N.P.; Dvurechenskii, A.V.; Armbrister, V.A.; Kirienko, V.V.; Novikov, P.L.; Kesler, V.G.; Gutakovskii, A.K.; Smagina, Z.V.; Spesivtzev, E.V.

2008-01-01

A floating gate memory structure, utilizing Ge nanocrystals (NCs) deposited on tunnel SiO 2 , have been fabricated using pulsed low energy ion-beam induced molecular-beam deposition (MBD) in ultra-high vacuum. The ion-beam action is shown to stimulate the nucleation of Ge NCs when being applied after thin Ge layer deposition. Growth conditions for independent change of NCs size and array density were established allowing to optimize the structure parameters required for memory device. Activation energy E = 0.25 eV was determined from the temperature dependence of NCs array density. Monte Carlo simulation has shown that the process, determining NCs array density, is the surface diffusion. Embedding of the crystalline Ge dots into silicon oxide was carried out by selective oxidation of Si(100)/SiO 2 /Ge(NCs)/poly-Si structure. MOS-capacitor obtained after oxidation showed a hysteresis in its C-V curves attributed to charge retention in the Ge dots

CMOS gate array characterization procedures

Science.gov (United States)

Spratt, James P.

1993-09-01

Present procedures are inadequate for characterizing the radiation hardness of gate array product lines prior to personalization because the selection of circuits to be used, from among all those available in the manufacturer's circuit library, is usually uncontrolled. (Some circuits are fundamentally more radiation resistant than others.) In such cases, differences in hardness can result between different designs of the same logic function. Hardness also varies because many gate arrays feature large custom-designed megacells (e.g., microprocessors and random access memories-MicroP's and RAM's). As a result, different product lines cannot be compared equally. A characterization strategy is needed, along with standardized test vehicle(s), methodology, and conditions, so that users can make informed judgments on which gate arrays are best suited for their needs. The program described developed preferred procedures for the radiation characterization of gate arrays, including a gate array evaluation test vehicle, featuring a canary circuit, designed to define the speed versus hardness envelope of the gate array. A multiplier was chosen for this role, and a baseline multiplier architecture is suggested that could be incorporated into an existing standard evaluation circuit chip.

An Investigation of Quantum Dot Super Lattice Use in Nonvolatile Memory and Transistors

Science.gov (United States)

Mirdha, P.; Parthasarathy, B.; Kondo, J.; Chan, P.-Y.; Heller, E.; Jain, F. C.

2018-02-01

Site-specific self-assembled colloidal quantum dots (QDs) will deposit in two layers only on p-type substrate to form a QD superlattice (QDSL). The QDSL structure has been integrated into the floating gate of a nonvolatile memory component and has demonstrated promising results in multi-bit storage, ease of fabrication, and memory retention. Additionally, multi-valued logic devices and circuits have been created by using QDSL structures which demonstrated ternary and quaternary logic. With increasing use of site-specific self-assembled QDSLs, fundamental understanding of silicon and germanium QDSL charge storage capability, self-assembly on specific surfaces, uniform distribution, and mini-band formation has to be understood for successful implementation in devices. In this work, we investigate the differences in electron charge storage by building metal-oxide semiconductor (MOS) capacitors and using capacitance and voltage measurements to quantify the storage capabilities. The self-assembly process and distribution density of the QDSL is done by obtaining atomic force microscopy (AFM) results on line samples. Additionally, we present a summary of the theoretical density of states in each of the QDSLs.

Memory operation mechanism of fullerene-containing polymer memory

Energy Technology Data Exchange (ETDEWEB)

Nakajima, Anri, E-mail: anakajima@hiroshima-u.ac.jp; Fujii, Daiki [Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527 (Japan)

2015-03-09

The memory operation mechanism in fullerene-containing nanocomposite gate insulators was investigated while varying the kind of fullerene in a polymer gate insulator. It was cleared what kind of traps and which positions in the nanocomposite the injected electrons or holes are stored in. The reason for the difference in the easiness of programming was clarified taking the role of the charging energy of an injected electron into account. The dependence of the carrier dynamics on the kind of fullerene molecule was investigated. A nonuniform distribution of injected carriers occurred after application of a large magnitude programming voltage due to the width distribution of the polystyrene barrier between adjacent fullerene molecules. Through the investigations, we demonstrated a nanocomposite gate with fullerene molecules having excellent retention characteristics and a programming capability. This will lead to the realization of practical organic memories with fullerene-containing polymer nanocomposites.

Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO{sub 2} for non-volatile memory device

Energy Technology Data Exchange (ETDEWEB)

Stepina, N.P. [Institute of Semiconductor Physics, Lavrenteva 13, 630090 Novosibirsk (Russian Federation)], E-mail: nstepina@mail.ru; Dvurechenskii, A.V.; Armbrister, V.A.; Kirienko, V.V.; Novikov, P.L.; Kesler, V.G.; Gutakovskii, A.K.; Smagina, Z.V.; Spesivtzev, E.V. [Institute of Semiconductor Physics, Lavrenteva 13, 630090 Novosibirsk (Russian Federation)

2008-11-03

A floating gate memory structure, utilizing Ge nanocrystals (NCs) deposited on tunnel SiO{sub 2}, have been fabricated using pulsed low energy ion-beam induced molecular-beam deposition (MBD) in ultra-high vacuum. The ion-beam action is shown to stimulate the nucleation of Ge NCs when being applied after thin Ge layer deposition. Growth conditions for independent change of NCs size and array density were established allowing to optimize the structure parameters required for memory device. Activation energy E = 0.25 eV was determined from the temperature dependence of NCs array density. Monte Carlo simulation has shown that the process, determining NCs array density, is the surface diffusion. Embedding of the crystalline Ge dots into silicon oxide was carried out by selective oxidation of Si(100)/SiO{sub 2} /Ge(NCs)/poly-Si structure. MOS-capacitor obtained after oxidation showed a hysteresis in its C-V curves attributed to charge retention in the Ge dots.

Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack

Directory of Open Access Journals (Sweden)

Shi-Bing Qian

2015-12-01

Full Text Available Amorphous indium-gallium-zinc oxide (a-IGZO thin-film transistor (TFT memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack under a maximal processing temperature of 300 oC. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at −17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at −14 V, a memory window of 2.08 V was still maintained after 103 P/E cycles, and a memory window of 1.1 V was retained after 105 s retention time.

Monitoring of Postoperative Bone Healing Using Smart Trauma-Fixation Device With Integrated Self-Powered Piezo-Floating-Gate Sensors.

Science.gov (United States)

Borchani, Wassim; Aono, Kenji; Lajnef, Nizar; Chakrabartty, Shantanu

2016-07-01

Achieving better surgical outcomes in cases of traumatic bone fractures requires postoperative monitoring of changes in the growth and mechanical properties of the tissue and bones during the healing process. While current in-vivo imaging techniques can provide a snapshot of the extent of bone growth, it is unable to provide a history of the healing process, which is important if any corrective surgery is required. Monitoring the time evolution of in-vivo mechanical loads using existing technology is a challenge due to the need for continuous power while maintaining patient mobility and comfort. This paper investigates the feasibility of self-powered monitoring of the bone-healing process using our previously reported piezo-floating-gate (PFG) sensors. The sensors are directly integrated with a fixation device and operate by harvesting energy from microscale strain variations in the fixation structure. We show that the sensors can record and store the statistics of the strain evolution during the healing process for offline retrieval and analysis. Additionally, we present measurement results using a biomechanical phantom comprising of a femur fracture fixation plate; bone healing is emulated by inserting different materials, with gradually increasing elastic moduli, inside a fracture gap. The PFG sensor can effectively sense, compute, and record continuously evolving statistics of mechanical loading over a typical healing period of a bone, and the statistics could be used to differentiate between different bone-healing conditions. The proposed sensor presents a reliable objective technique to assess bone-healing progress and help decide on the removal time of the fixation device.

Memory, microprocessor, and ASIC

CERN Document Server

Chen, Wai-Kai

2003-01-01

System Timing. ROM/PROM/EPROM. SRAM. Embedded Memory. Flash Memories. Dynamic Random Access Memory. Low-Power Memory Circuits. Timing and Signal Integrity Analysis. Microprocessor Design Verification. Microprocessor Layout Method. Architecture. ASIC Design. Logic Synthesis for Field Programmable Gate Array (EPGA) Technology. Testability Concepts and DFT. ATPG and BIST. CAD Tools for BIST/DFT and Delay Faults.

Differential involvement of glutamate-gated chloride channel splice variants in the olfactory memory processes of the honeybee Apis mellifera.

Science.gov (United States)

Démares, Fabien; Drouard, Florian; Massou, Isabelle; Crattelet, Cindy; Lœuillet, Aurore; Bettiol, Célia; Raymond, Valérie; Armengaud, Catherine

2014-09-01

Glutamate-gated chloride channels (GluCl) belong to the cys-loop ligand-gated ion channel superfamily and their expression had been described in several invertebrate nervous systems. In the honeybee, a unique gene amel_glucl encodes two alternatively spliced subunits, Amel_GluCl A and Amel_GluCl B. The expression and differential localization of those variants in the honeybee brain had been previously reported. Here we characterized the involvement of each variant in olfactory learning and memory processes, using specific small-interfering RNA (siRNA) targeting each variant. Firstly, the efficacy of the two siRNAs to decrease their targets' expression was tested, both at mRNA and protein levels. The two proteins showed a decrease of their respective expression 24h after injection. Secondly, each siRNA was injected into the brain to test whether or not it affected olfactory memory by using a classical paradigm of conditioning the proboscis extension reflex (PER). Amel_GluCl A was found to be involved only in retrieval of 1-nonanol, whereas Amel_GluCl B was involved in the PER response to 2-hexanol used as a conditioned stimulus or as new odorant. Here for the first time, a differential behavioral involvement of two highly similar GluCl subunits has been characterized in an invertebrate species. Copyright © 2014 Elsevier Inc. All rights reserved.

Tunnel field-effect transistor charge-trapping memory with steep subthreshold slope and large memory window

Science.gov (United States)

Kino, Hisashi; Fukushima, Takafumi; Tanaka, Tetsu

2018-04-01

Charge-trapping memory requires the increase of bit density per cell and a larger memory window for lower-power operation. A tunnel field-effect transistor (TFET) can achieve to increase the bit density per cell owing to its steep subthreshold slope. In addition, a TFET structure has an asymmetric structure, which is promising for achieving a larger memory window. A TFET with the N-type gate shows a higher electric field between the P-type source and the N-type gate edge than the conventional FET structure. This high electric field enables large amounts of charges to be injected into the charge storage layer. In this study, we fabricated silicon-oxide-nitride-oxide-semiconductor (SONOS) memory devices with the TFET structure and observed a steep subthreshold slope and a larger memory window.

40 CFR 65.45 - External floating roof converted into an internal floating roof.

Science.gov (United States)

2010-07-01

... External floating roof converted into an internal floating roof. The owner or operator who elects to... 40 Protection of Environment 15 2010-07-01 2010-07-01 false External floating roof converted into an internal floating roof. 65.45 Section 65.45 Protection of Environment ENVIRONMENTAL PROTECTION...

Synthesizing biomolecule-based Boolean logic gates.

Science.gov (United States)

Miyamoto, Takafumi; Razavi, Shiva; DeRose, Robert; Inoue, Takanari

2013-02-15

One fascinating recent avenue of study in the field of synthetic biology is the creation of biomolecule-based computers. The main components of a computing device consist of an arithmetic logic unit, the control unit, memory, and the input and output devices. Boolean logic gates are at the core of the operational machinery of these parts, and hence to make biocomputers a reality, biomolecular logic gates become a necessity. Indeed, with the advent of more sophisticated biological tools, both nucleic acid- and protein-based logic systems have been generated. These devices function in the context of either test tubes or living cells and yield highly specific outputs given a set of inputs. In this review, we discuss various types of biomolecular logic gates that have been synthesized, with particular emphasis on recent developments that promise increased complexity of logic gate circuitry, improved computational speed, and potential clinical applications.

Synthesizing Biomolecule-based Boolean Logic Gates

Science.gov (United States)

Miyamoto, Takafumi; Razavi, Shiva; DeRose, Robert; Inoue, Takanari

2012-01-01

One fascinating recent avenue of study in the field of synthetic biology is the creation of biomolecule-based computers. The main components of a computing device consist of an arithmetic logic unit, the control unit, memory, and the input and output devices. Boolean logic gates are at the core of the operational machinery of these parts, hence to make biocomputers a reality, biomolecular logic gates become a necessity. Indeed, with the advent of more sophisticated biological tools, both nucleic acid- and protein-based logic systems have been generated. These devices function in the context of either test tubes or living cells and yield highly specific outputs given a set of inputs. In this review, we discuss various types of biomolecular logic gates that have been synthesized, with particular emphasis on recent developments that promise increased complexity of logic gate circuitry, improved computational speed, and potential clinical applications. PMID:23526588

Attention Gating in Short-Term Visual Memory.

Science.gov (United States)

Reeves, Adam; Sperling, George

1986-01-01

An experiment is conducted showing that an attention shift to a stream of numerals presented in rapid serial visual presentation mode produces not a total loss, but a systematic distortion of order. An attention gating model (AGM) is developed from a more general attention model. (Author/LMO)

Influence of magneto-electric coefficient for magnetic and electric charge injection properties in magneto-electric MIS capacitors

Energy Technology Data Exchange (ETDEWEB)

Yokota, T; Tsuboi, Y; Imura, R; Kito, S; Gomi, M, E-mail: yokota.takeshi@nitech.ac.jp [Department of Material Science and Engineering, Graduate School of Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya City, Aichi, 466-8555 (Japan)

2011-10-29

We investigated the electric charge injection properties of a floating-gate type metal-insulator Si capacitor having different-ME gate insulators. The samples showed charge-injection type behaviour in capacitance-voltage curves, and it was revealed that the amount of injected charges can be controlled by the application of an external magnetic field. The sample having a high-ME-coefficient gate insulator showed stepwise capacitance-voltage curves unlike the normal one. These results indicate that this capacitor, which employs a magnetic gate insulator, has the potential to be used in multilevel memory by the application of an external magnetic field.

Structural and optical properties of germanium nanostructures on Si(100 and embedded in high-k oxides

Directory of Open Access Journals (Sweden)

Ray Samit

2011-01-01

Full Text Available Abstract The structural and optical properties of Ge quantum dots (QDs grown on Si(001 for mid-infrared photodetector and Ge nanocrystals embedded in oxide matrices for floating gate memory devices are presented. The infrared photoluminescence (PL signal from Ge islands has been studied at a low temperature. The temperature- and bias-dependent photocurrent spectra of a capped Si/SiGe/Si(001 QDs infrared photodetector device are presented. The properties of Ge nanocrystals of different size and density embedded in high-k matrices grown using radio frequency magnetron sputtering have been studied. Transmission electron micrographs have revealed the formation of isolated spherical Ge nanocrystals in high-k oxide matrix of sizes ranging from 4 to 18 nm. Embedded nanocrystals in high band gap oxides have been found to act as discrete trapping sites for exchanging charge carriers with the conduction channel by direct tunneling that is desired for applications in floating gate memory devices.

Capacitorless one-transistor dynamic random-access memory based on asymmetric double-gate Ge/GaAs-heterojunction tunneling field-effect transistor with n-doped boosting layer and drain-underlap structure

Science.gov (United States)

Yoon, Young Jun; Seo, Jae Hwa; Kang, In Man

2018-04-01

In this work, we present a capacitorless one-transistor dynamic random-access memory (1T-DRAM) based on an asymmetric double-gate Ge/GaAs-heterojunction tunneling field-effect transistor (TFET) for DRAM applications. The n-doped boosting layer and gate2 drain-underlap structure is employed in the device to obtain an excellent 1T-DRAM performance. The n-doped layer inserted between the source and channel regions improves the sensing margin because of a high rate of increase in the band-to-band tunneling (BTBT) probability. Furthermore, because the gate2 drain-underlap structure reduces the recombination rate that occurs between the gate2 and drain regions, a device with a gate2 drain-underlap length (L G2_D-underlap) of 10 nm exhibited a longer retention performance. As a result, by applying the n-doped layer and gate2 drain-underlap structure, the proposed device exhibited not only a high sensing margin of 1.11 µA/µm but also a long retention time of greater than 100 ms at a temperature of 358 K (85 °C).

Pulsed total dose damage effect experimental study on EPROM

International Nuclear Information System (INIS)

Luo Yinhong; Yao Zhibin; Zhang Fengqi; Guo Hongxia; Zhang Keying; Wang Yuanming; He Baoping

2011-01-01

Nowadays, memory radiation effect study mainly focus on functionality measurement. Measurable parameters is few in china. According to the present situation, threshold voltage testing method was presented on floating gate EPROM memory. Experimental study of pulsed total dose effect on EPROM threshold voltage was carried out. Damage mechanism was analysed The experiment results showed that memory cell threshold voltage negative shift was caused by pulsed total dose, memory cell threshold voltage shift is basically coincident under steady bias supply and no bias supply. (authors)

Blocking of irrelevant memories by posterior alpha activity boosts memory encoding.

Science.gov (United States)

Park, Hyojin; Lee, Dong Soo; Kang, Eunjoo; Kang, Hyejin; Hahm, Jarang; Kim, June Sic; Chung, Chun Kee; Jensen, Ole

2014-08-01

In our daily lives, we are confronted with a large amount of information. Because only a small fraction can be encoded in long-term memory, the brain must rely on powerful mechanisms to filter out irrelevant information. To understand the neuronal mechanisms underlying the gating of information into long-term memory, we employed a paradigm where the encoding was directed by a "Remember" or a "No-Remember" cue. We found that posterior alpha activity increased prior to the "No-Remember" stimuli, whereas it decreased prior to the "Remember" stimuli. The sources were localized in the parietal cortex included in the dorsal attention network. Subjects with a larger cue-modulation of the alpha activity had better memory for the to-be-remembered items. Interestingly, alpha activity reflecting successful inhibition following the "No-Remember" cue was observed in the frontal midline structures suggesting preparatory inhibition was mediated by anterior parts of the dorsal attention network. During the presentation of the memory items, there was more gamma activity for the "Remember" compared to the "No-Remember" items in the same regions. Importantly, the anticipatory alpha power during cue predicted the gamma power during item. Our findings suggest that top-down controlled alpha activity reflects attentional inhibition of sensory processing in the dorsal attention network, which then finally gates information to long-term memory. This gating is achieved by inhibiting the processing of visual information reflected by neuronal synchronization in the gamma band. In conclusion, the functional architecture revealed by region-specific changes in the alpha activity reflects attentional modulation which has consequences for long-term memory encoding. Copyright © 2014 Wiley Periodicals, Inc.

FLOAT Project

DEFF Research Database (Denmark)

Sørensen, Eigil V.; Aarup, Bendt

The objective of the FLOAT project is to study the reliability of high-performance fibre-reinforced concrete, also known as Compact Reinforced Composite (CRC), for the floats of wave energy converters. In order to reach a commercial breakthrough, wave energy converters need to achieve a lower price...

Architectures for a quantum random access memory

Science.gov (United States)

Giovannetti, Vittorio; Lloyd, Seth; Maccone, Lorenzo

2008-11-01

A random access memory, or RAM, is a device that, when interrogated, returns the content of a memory location in a memory array. A quantum RAM, or qRAM, allows one to access superpositions of memory sites, which may contain either quantum or classical information. RAMs and qRAMs with n -bit addresses can access 2n memory sites. Any design for a RAM or qRAM then requires O(2n) two-bit logic gates. At first sight this requirement might seem to make large scale quantum versions of such devices impractical, due to the difficulty of constructing and operating coherent devices with large numbers of quantum logic gates. Here we analyze two different RAM architectures (the conventional fanout and the “bucket brigade”) and propose some proof-of-principle implementations, which show that, in principle, only O(n) two-qubit physical interactions need take place during each qRAM call. That is, although a qRAM needs O(2n) quantum logic gates, only O(n) need to be activated during a memory call. The resulting decrease in resources could give rise to the construction of large qRAMs that could operate without the need for extensive quantum error correction.

Gating based on internal/external signals with dynamic correlation updates

International Nuclear Information System (INIS)

Wu Huanmei; Zhao Qingya; Berbeco, Ross I; Nishioka, Seiko; Shirato, Hiroki; Jiang, Steve B

2008-01-01

Precise localization of mobile tumor positions in real time is critical to the success of gated radiotherapy. Tumor positions are usually derived from either internal or external surrogates. Fluoroscopic gating based on internal surrogates, such as implanted fiducial markers, is accurate however requiring a large amount of imaging dose. Gating based on external surrogates, such as patient abdominal surface motion, is non-invasive however less accurate due to the uncertainty in the correlation between tumor location and external surrogates. To address these complications, we propose to investigate an approach based on hybrid gating with dynamic internal/external correlation updates. In this approach, the external signal is acquired at high frequency (such as 30 Hz) while the internal signal is sparsely acquired (such as 0.5 Hz or less). The internal signal is used to validate and update the internal/external correlation during treatment. Tumor positions are derived from the external signal based on the newly updated correlation. Two dynamic correlation updating algorithms are introduced. One is based on the motion amplitude and the other is based on the motion phase. Nine patients with synchronized internal/external motion signals are simulated retrospectively to evaluate the effectiveness of hybrid gating. The influences of different clinical conditions on hybrid gating, such as the size of gating windows, the optimal timing for internal signal acquisition and the acquisition frequency are investigated. The results demonstrate that dynamically updating the internal/external correlation in or around the gating window will reduce false positive with relatively diminished treatment efficiency. This improvement will benefit patients with mobile tumors, especially greater for early stage lung cancers, for which the tumors are less attached or freely floating in the lung.

Gating based on internal/external signals with dynamic correlation updates

Energy Technology Data Exchange (ETDEWEB)

Wu Huanmei [Purdue School of Engineering and Technology, Indiana University School of Informatics, IUPUI, Indianapolis, IN (United States); Zhao Qingya [School of Health Sciences, Purdue University, West Lafayette, IN (United States); Berbeco, Ross I [Department of Radiation Oncology, Dana-Farber/Brigham and Womens Cancer Center and Harvard Medical School, Boston, MA (United States); Nishioka, Seiko [NTT East-Japan Sapporo Hospital, Sapporo (Japan); Shirato, Hiroki [Hokkaido University Graduate School of Medicine, Sapporo (Japan); Jiang, Steve B [Department of Radiation Oncology, School of Medicine, University of California, San Diego, CA (United States)], E-mail: hw9@iupui.edu, E-mail: sbjiang@ucsd.edu

2008-12-21

Precise localization of mobile tumor positions in real time is critical to the success of gated radiotherapy. Tumor positions are usually derived from either internal or external surrogates. Fluoroscopic gating based on internal surrogates, such as implanted fiducial markers, is accurate however requiring a large amount of imaging dose. Gating based on external surrogates, such as patient abdominal surface motion, is non-invasive however less accurate due to the uncertainty in the correlation between tumor location and external surrogates. To address these complications, we propose to investigate an approach based on hybrid gating with dynamic internal/external correlation updates. In this approach, the external signal is acquired at high frequency (such as 30 Hz) while the internal signal is sparsely acquired (such as 0.5 Hz or less). The internal signal is used to validate and update the internal/external correlation during treatment. Tumor positions are derived from the external signal based on the newly updated correlation. Two dynamic correlation updating algorithms are introduced. One is based on the motion amplitude and the other is based on the motion phase. Nine patients with synchronized internal/external motion signals are simulated retrospectively to evaluate the effectiveness of hybrid gating. The influences of different clinical conditions on hybrid gating, such as the size of gating windows, the optimal timing for internal signal acquisition and the acquisition frequency are investigated. The results demonstrate that dynamically updating the internal/external correlation in or around the gating window will reduce false positive with relatively diminished treatment efficiency. This improvement will benefit patients with mobile tumors, especially greater for early stage lung cancers, for which the tumors are less attached or freely floating in the lung.

Fabrication of a Silicon Nanowire on a Bulk Substrate by Use of a Plasma Etching and Total Ionizing Dose Effects on a Gate-All-Around Field-Effect Transistor

Science.gov (United States)

Moon, Dong-Il; Han, Jin-Woo; Meyyappan, Meyya

2016-01-01

The gate all around transistor is investigated through experiment. The suspended silicon nanowire for the next generation is fabricated on bulk substrate by plasma etching method. The scallop pattern generated by Bosch process is utilized to form a floating silicon nanowire. By combining anisotropic and istropic silicon etch process, the shape of nanowire is accurately controlled. From the suspended nanowire, the gate all around transistor is demonstrated. As the silicon nanowire is fully surrounded by the gate, the device shows excellent electrostatic characteristics.

Offshore floating windmills

International Nuclear Information System (INIS)

1993-10-01

The aim was to produce a general survey of the profitability of establishing floating offshore wind turbine arrays and to compare this with the cost and profitability of constructing offshore arrays with fixed foundations and arrays located on land sites. Aspects of design in all cases are described, also into relation to the special demands placed on dimensioning in relation to the types of location and foundation. The costs of the offshore arrays are evaluated in relation to capacity under conditions in Danish waters. The advantage of floating arrays is that they can be placed far out to sea where they can not be seen from the coast and thus not be considered to spoil the marine view. But as the water gets deeper the cost of floating foundations rises. It was found that it would not be technologically profitable to establish floating arrays at a depth of less than 30 - 40 meters which means that only the outer Danish waters can be taken into consideration. For depths of up to 70 meters, individual floating bases are more expensive than fixed ones but would be cheaper if a number of windmills could share the same anchor. For depths of more than 70 meters floating foundations would be the cheapest. The cost is dependent on the depth and distance from the coast and also on wind conditions. The main conclusion is that currently the cost of establishing wind turbine arrays in deeper outer waters on floating foundations is comparable to that of arrays sited at inner waters on solid foundations placed on the sea bed. (AB) (20 refs.)

Handbook of floating-point arithmetic

CERN Document Server

Muller, Jean-Michel; de Dinechin, Florent; Jeannerod, Claude-Pierre; Joldes, Mioara; Lefèvre, Vincent; Melquiond, Guillaume; Revol, Nathalie; Torres, Serge

2018-01-01

This handbook is a definitive guide to the effective use of modern floating-point arithmetic, which has considerably evolved, from the frequently inconsistent floating-point number systems of early computing to the recent IEEE 754-2008 standard. Most of computational mathematics depends on floating-point numbers, and understanding their various implementations will allow readers to develop programs specifically tailored for the standard’s technical features. Algorithms for floating-point arithmetic are presented throughout the book and illustrated where possible by example programs which show how these techniques appear in actual coding and design. The volume itself breaks its core topic into four parts: the basic concepts and history of floating-point arithmetic; methods of analyzing floating-point algorithms and optimizing them; implementations of IEEE 754-2008 in hardware and software; and useful extensions to the standard floating-point system, such as interval arithmetic, double- and triple-word arithm...

Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al{sub 2}O{sub 3}/Pt nanocrystals/Al{sub 2}O{sub 3} gate stack

Energy Technology Data Exchange (ETDEWEB)

Qian, Shi-Bing; Zhang, Wen-Peng; Liu, Wen-Jun; Ding, Shi-Jin, E-mail: sjding@fudan.edu.cn [State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433 (China)

2015-12-15

Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al{sub 2}O{sub 3}/Pt nanocrystals/Al{sub 2}O{sub 3} gate stack under a maximal processing temperature of 300 {sup o}C. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at −17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E) characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at −14 V, a memory window of 2.08 V was still maintained after 10{sup 3} P/E cycles, and a memory window of 1.1 V was retained after 10{sup 5} s retention time.

Nanogranular SiO{sub 2} proton gated silicon layer transistor mimicking biological synapses

Energy Technology Data Exchange (ETDEWEB)

Liu, M. J.; Huang, G. S., E-mail: gshuang@fudan.edu.cn, E-mail: pfeng@nju.edu.cn; Guo, Q. L.; Tian, Z. A.; Li, G. J.; Mei, Y. F. [Department of Materials Science, Fudan University, Shanghai 200433 (China); Feng, P., E-mail: gshuang@fudan.edu.cn, E-mail: pfeng@nju.edu.cn; Shao, F.; Wan, Q. [School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China)

2016-06-20

Silicon on insulator (SOI)-based transistors gated by nanogranular SiO{sub 2} proton conducting electrolytes were fabricated to mimic synapse behaviors. This SOI-based device has both top proton gate and bottom buried oxide gate. Electrical transfer properties of top proton gate show hysteresis curves different from those of bottom gate, and therefore, excitatory post-synaptic current and paired pulse facilitation (PPF) behavior of biological synapses are mimicked. Moreover, we noticed that PPF index can be effectively tuned by the spike interval applied on the top proton gate. Synaptic behaviors and functions, like short-term memory, and its properties are also experimentally demonstrated in our device. Such SOI-based electronic synapses are promising for building neuromorphic systems.

Fixed-Rate Compressed Floating-Point Arrays.

Science.gov (United States)

Lindstrom, Peter

2014-12-01

Current compression schemes for floating-point data commonly take fixed-precision values and compress them to a variable-length bit stream, complicating memory management and random access. We present a fixed-rate, near-lossless compression scheme that maps small blocks of 4(d) values in d dimensions to a fixed, user-specified number of bits per block, thereby allowing read and write random access to compressed floating-point data at block granularity. Our approach is inspired by fixed-rate texture compression methods widely adopted in graphics hardware, but has been tailored to the high dynamic range and precision demands of scientific applications. Our compressor is based on a new, lifted, orthogonal block transform and embedded coding, allowing each per-block bit stream to be truncated at any point if desired, thus facilitating bit rate selection using a single compression scheme. To avoid compression or decompression upon every data access, we employ a software write-back cache of uncompressed blocks. Our compressor has been designed with computational simplicity and speed in mind to allow for the possibility of a hardware implementation, and uses only a small number of fixed-point arithmetic operations per compressed value. We demonstrate the viability and benefits of lossy compression in several applications, including visualization, quantitative data analysis, and numerical simulation.

Behavioural memory reconsolidation of food and fear memories.

Science.gov (United States)

Flavell, Charlotte R; Barber, David J; Lee, Jonathan L C

2011-10-18

The reactivation of a memory through retrieval can render it subject to disruption or modification through the process of memory reconsolidation. In both humans and rodents, briefly reactivating a fear memory results in effective erasure by subsequent extinction training. Here we show that a similar strategy is equally effective in the disruption of appetitive pavlovian cue-food memories. However, systemic administration of the NMDA receptor partial agonist D-cycloserine, under the same behavioural conditions, did not potentiate appetitive memory extinction, suggesting that reactivation does not enhance subsequent extinction learning. To confirm that reactivation followed by extinction reflects a behavioural analogue of memory reconsolidation, we show that prevention of contextual fear memory reactivation by the L-type voltage-gated calcium channel blocker nimodipine interferes with the amnestic outcome. Therefore, the reconsolidation process can be manipulated behaviourally to disrupt both aversive and appetitive memories. © 2011 Macmillan Publishers Limited. All rights reserved.

Fast Weight Long Short-Term Memory

OpenAIRE

Keller, T. Anderson; Sridhar, Sharath Nittur; Wang, Xin

2018-01-01

Associative memory using fast weights is a short-term memory mechanism that substantially improves the memory capacity and time scale of recurrent neural networks (RNNs). As recent studies introduced fast weights only to regular RNNs, it is unknown whether fast weight memory is beneficial to gated RNNs. In this work, we report a significant synergy between long short-term memory (LSTM) networks and fast weight associative memories. We show that this combination, in learning associative retrie...

Floating offshore turbines

DEFF Research Database (Denmark)

Tande, John Olav Giæver; Merz, Karl; Schmidt Paulsen, Uwe

2014-01-01

metric of energy production per unit steel mass. Floating offshore wind turbines represent a promising technology. The successful operation of HyWind and WindFloat in full scale demonstrates a well advanced technology readiness level, where further development will go into refining the concepts, cost...

Compensated readout for high-density MOS-gated memristor crossbar array

KAUST Repository

Zidan, Mohammed A.

2015-01-01

Leakage current is one of the main challenges facing high-density MOS-gated memristor arrays. In this study, we show that leakage current ruins the memory readout process for high-density arrays, and analyze the tradeoff between the array density and its power consumption. We propose a novel readout technique and its underlying circuitry, which is able to compensate for the transistor leakage-current effect in the high-density gated memristor array.

Applications of field-programmable gate arrays in scientific research

CERN Document Server

Sadrozinski, Hartmut F W

2011-01-01

Focusing on resource awareness in field-programmable gate array (FPGA) design, Applications of Field-Programmable Gate Arrays in Scientific Research covers the principle of FPGAs and their functionality. It explores a host of applications, ranging from small one-chip laboratory systems to large-scale applications in ""big science."" The book first describes various FPGA resources, including logic elements, RAM, multipliers, microprocessors, and content-addressable memory. It then presents principles and methods for controlling resources, such as process sequencing, location constraints, and in

Design of polarization encoded all-optical 4-valued MAX logic gate and its applications

Science.gov (United States)

Chattopadhyay, Tanay; Nath Roy, Jitendra

2013-07-01

Quaternary maximum (QMAX) gate is one type of multi-valued logic gate. An all-optical scheme of polarization encoded quaternary (4-valued) MAX logic gate with the help of Terahertz Optical Asymmetric Demultiplexer (TOAD) based fiber interferometric switch is proposed and described. For the quaternary information processing in optics, the quaternary number (0, 1, 2, 3) can be represented by four discrete polarized states of light. Numerical simulation result confirming the described methods is given in this paper. Some applications of MAX gate in logical operation and memory device are also given.

Deterministic quantum controlled-PHASE gates based on non-Markovian environments

Science.gov (United States)

Zhang, Rui; Chen, Tian; Wang, Xiang-Bin

2017-12-01

We study the realization of the quantum controlled-PHASE gate in an atom-cavity system beyond the Markovian approximation. The general description of the dynamics for the atom-cavity system without any approximation is presented. When the spectral density of the reservoir has the Lorentz form, by making use of the memory backflow from the reservoir, we can always construct the deterministic quantum controlled-PHASE gate between a photon and an atom, no matter the atom-cavity coupling strength is weak or strong. While, the phase shift in the output pulse hinders the implementation of quantum controlled-PHASE gates in the sub-Ohmic, Ohmic or super-Ohmic reservoirs.

Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices

Science.gov (United States)

Yu, Jie; Chen, Kun-ji; Ma, Zhong-yuan; Zhang, Xin-xin; Jiang, Xiao-fan; Wu, Yang-qing; Huang, Xin-fan; Oda, Shunri

2016-09-01

Based on the charge storage mode, it is important to investigate the scaling dependence of memory performance in silicon nanocrystal (Si-NC) nonvolatile memory (NVM) devices for its scaling down limit. In this work, we made eight kinds of test key cells with different gate widths and lengths by 0.13-μm node complementary metal oxide semiconductor (CMOS) technology. It is found that the memory windows of eight kinds of test key cells are almost the same of about 1.64 V @ ± 7 V/1 ms, which are independent of the gate area, but mainly determined by the average size (12 nm) and areal density (1.8 × 1011/cm2) of Si-NCs. The program/erase (P/E) speed characteristics are almost independent of gate widths and lengths. However, the erase speed is faster than the program speed of test key cells, which is due to the different charging behaviors between electrons and holes during the operation processes. Furthermore, the data retention characteristic is also independent of the gate area. Our findings are useful for further scaling down of Si-NC NVM devices to improve the performance and on-chip integration. Project supported by the State Key Development Program for Basic Research of China (Grant No. 2010CB934402) and the National Natural Science Foundation of China (Grant Nos. 11374153, 61571221, and 61071008).

14 CFR 27.753 - Main float design.

Science.gov (United States)

2010-01-01

... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Main float design. 27.753 Section 27.753... STANDARDS: NORMAL CATEGORY ROTORCRAFT Design and Construction Floats and Hulls § 27.753 Main float design. (a) Bag floats. Each bag float must be designed to withstand— (1) The maximum pressure differential...

14 CFR 29.753 - Main float design.

Science.gov (United States)

2010-01-01

... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Main float design. 29.753 Section 29.753... STANDARDS: TRANSPORT CATEGORY ROTORCRAFT Design and Construction Floats and Hulls § 29.753 Main float design. (a) Bag floats. Each bag float must be designed to withstand— (1) The maximum pressure differential...

Track recognition with an associative pattern memory

International Nuclear Information System (INIS)

Bok, H.W. den; Visschers, J.L.; Borgers, A.J.; Lourens, W.

1991-01-01

Using Programmable Gate Arrays (PGAs), a prototype for a fast Associative Pattern Memory module has been realized. The associative memory performs the recognition of tracks within the hadron detector data acquisition system at NIKHEF-K. The memory matches the detector state with a set of 24 predefined tracks to identify the particle tracks that occur during an event. This information enables the trigger hardware to classify and select or discriminate the event. Mounted on a standard size (6U) VME board, several PGAs together form an associative memory. The internal logic architecture of the Gate Array is used in such a way as to minimize signal propagation delay. The memory cells, containing a binary representation of the particle tracks, are dynamically loadable through a VME bus interface, providing a high level of flexibility. The hadron detector and its readout system are briefly described and our track representation method is presented. Results from measurements under experimental conditions are discussed. (orig.)

Noise-assisted morphing of memory and logic function

International Nuclear Information System (INIS)

Kohar, Vivek; Sinha, Sudeshna

2012-01-01

We demonstrate how noise allows a bistable system to behave as a memory device, as well as a logic gate. Namely, in some optimal range of noise, the system can operate flexibly, both as a NAND/AND gate and a Set–Reset latch, by varying an asymmetrizing bias. Thus we show how this system implements memory, even for sub-threshold input signals, using noise constructively to store information. This can lead to the development of reconfigurable devices, that can switch efficiently between memory tasks and logic operations. -- Highlights: ► We consider a nonlinear system in a noisy environment. ► We show that the system can function as a robust memory element. ► Further, the response of the system can be easily morphed from memory to logic operations. ► Such systems can potentially act as building blocks of “smart” computing devices.

The Coarse-Grained/Fine-Grained Logic Interface in FPGAs with Embedded Floating-Point Arithmetic Units

Directory of Open Access Journals (Sweden)

Chi Wai Yu

2008-01-01

Full Text Available This paper examines the interface between fine-grained and coarse-grained programmable logic in FPGAs. Specifically, it presents an empirical study that covers the location, pin arrangement, and interconnect between embedded floating point units (FPUs and the fine-grained logic fabric in FPGAs. It also studies this interface in FPGAs which contain both FPUs and embedded memories. The results show that (1 FPUs should have a square aspect ratio; (2 they should be positioned near the center of the FPGA; (3 their I/O pins should be arranged around all four sides of the FPU; (4 embedded memory should be located between the FPUs; and (5 connecting higher I/O density coarse-grained blocks increases the demand for routing resources. The hybrid FPGAs with embedded memory required 12% wider channels than the case where embedded memory is not used.

Wave attenuation charcteristics of tethered float system

Digital Repository Service at National Institute of Oceanography (India)

Vethamony, P.

incident wave height transmitted wave height G wave number float mass number of rows of floats drag power transmitted wave power incident wave power 111 112 P. Vethamony float radius wave period time velocity and acceleration of fluid... particles, respectively wave attenuation in percentage displacement, velocity and acceleration of float, respectively amplitude of float displacement added mass damping coefficient fluid particle displacement amplitude of fluid particle displacement...

Silicon integrated circuits part A : supplement 2

CERN Document Server

Kahng, Dawon

1981-01-01

Applied Solid State Science, Supplement 2: Silicon Integrated Circuits, Part A focuses on MOS device physics. This book is divided into three chapters-physics of the MOS transistor; nonvolatile memories; and properties of silicon-on-sapphire substrates devices, and integrated circuits. The topics covered include the short channel effects, MOSFET structures, floating gate devices, technology for nonvolatile semiconductor memories, sapphire substrates, and SOS integrated circuits and systems. The MOS capacitor, MIOS devices, and SOS process and device technology are also deliberated. This public

FLOAT Project - Task 1

DEFF Research Database (Denmark)

Marchalot, Tanguy; Kofoed, Jens Peter; Sørensen, Eigil V.

.com, 2011). CRC floats could be a very cost-effective technology with enhanced loading capacity and environmental resistance, and very low maintenance requirements, affecting directly the final energy price. The project involves DEXA Wave Energy Ltd, Wave Star A/S, Aalborg University and Hi-Con A......The objective of the FLOAT project is to study the reliability of high-performance fibre-reinforced concrete, also known as Compact Reinforced Composite (CRC), for the floats of wave energy converters. In order to reach commercial breakthrough, wave energy converters need to achieve a lower price...

Logic gates realized by nonvolatile GeTe/Sb2Te3 super lattice phase-change memory with a magnetic field input

Science.gov (United States)

Lu, Bin; Cheng, Xiaomin; Feng, Jinlong; Guan, Xiawei; Miao, Xiangshui

2016-07-01

Nonvolatile memory devices or circuits that can implement both storage and calculation are a crucial requirement for the efficiency improvement of modern computer. In this work, we realize logic functions by using [GeTe/Sb2Te3]n super lattice phase change memory (PCM) cell in which higher threshold voltage is needed for phase change with a magnetic field applied. First, the [GeTe/Sb2Te3]n super lattice cells were fabricated and the R-V curve was measured. Then we designed the logic circuits with the super lattice PCM cell verified by HSPICE simulation and experiments. Seven basic logic functions are first demonstrated in this letter; then several multi-input logic gates are presented. The proposed logic devices offer the advantages of simple structures and low power consumption, indicating that the super lattice PCM has the potential in the future nonvolatile central processing unit design, facilitating the development of massive parallel computing architecture.

Floating Microparticulate Oral Diltiazem Hydrochloride Delivery ...

African Journals Online (AJOL)

Purpose: To formulate and evaluate floating microparticulate oral diltiazem delivery system for possible delivery to the heart. Method: Floating microspheres were prepared using cellulose acetate and Eudragit RS100 polymers by emulsion solvent evaporation technique. The dried floating microspheres were evaluated for ...

Field programmable gate array-assigned complex-valued computation and its limits

Energy Technology Data Exchange (ETDEWEB)

Bernard-Schwarz, Maria, E-mail: maria.bernardschwarz@ni.com [National Instruments, Ganghoferstrasse 70b, 80339 Munich (Germany); Institute of Applied Physics, TU Wien, Wiedner Hauptstrasse 8, 1040 Wien (Austria); Zwick, Wolfgang; Klier, Jochen [National Instruments, Ganghoferstrasse 70b, 80339 Munich (Germany); Wenzel, Lothar [National Instruments, 11500 N MOPac Expy, Austin, Texas 78759 (United States); Gröschl, Martin [Institute of Applied Physics, TU Wien, Wiedner Hauptstrasse 8, 1040 Wien (Austria)

2014-09-15

We discuss how leveraging Field Programmable Gate Array (FPGA) technology as part of a high performance computing platform reduces latency to meet the demanding real time constraints of a quantum optics simulation. Implementations of complex-valued operations using fixed point numeric on a Virtex-5 FPGA compare favorably to more conventional solutions on a central processing unit. Our investigation explores the performance of multiple fixed point options along with a traditional 64 bits floating point version. With this information, the lowest execution times can be estimated. Relative error is examined to ensure simulation accuracy is maintained.

Electrically floating, near vertical incidence, skywave antenna

Science.gov (United States)

Anderson, Allen A.; Kaser, Timothy G.; Tremblay, Paul A.; Mays, Belva L.

2014-07-08

An Electrically Floating, Near Vertical Incidence, Skywave (NVIS) Antenna comprising an antenna element, a floating ground element, and a grounding element. At least part of said floating ground element is positioned between said antenna element and said grounding element. The antenna is separated from the floating ground element and the grounding element by one or more electrical insulators. The floating ground element is separated from said antenna and said grounding element by one or more electrical insulators.

A 600-µW ultra-low-power associative processor for image pattern recognition employing magnetic tunnel junction-based nonvolatile memories with autonomic intelligent power-gating scheme

Science.gov (United States)

Ma, Yitao; Miura, Sadahiko; Honjo, Hiroaki; Ikeda, Shoji; Hanyu, Takahiro; Ohno, Hideo; Endoh, Tetsuo

2016-04-01

A novel associative processor using magnetic tunnel junction (MTJ)-based nonvolatile memories has been proposed and fabricated under a 90 nm CMOS/70 nm perpendicular-MTJ (p-MTJ) hybrid process for achieving the exceptionally low-power performance of image pattern recognition. A four-transistor 2-MTJ (4T-2MTJ) spin transfer torque magnetoresistive random access memory was adopted to completely eliminate the standby power. A self-directed intelligent power-gating (IPG) scheme specialized for this associative processor is employed to optimize the operation power by only autonomously activating currently accessed memory cells. The operations of a prototype chip at 20 MHz are demonstrated by measurement. The proposed processor can successfully carry out single texture pattern matching within 6.5 µs using 128-dimension bag-of-feature patterns, and the measured average operation power of the entire processor core is only 600 µW. Compared with the twin chip designed with 6T static random access memory, 91.2% power reductions are achieved. More than 88.0% power reductions are obtained compared with the latest associative memories. The further power performance analysis is discussed in detail, which verifies the special superiority of the proposed processor in power consumption for large-capacity memory-based VLSI systems.

14 CFR 23.753 - Main float design.

Science.gov (United States)

2010-01-01

... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Main float design. 23.753 Section 23.753... STANDARDS: NORMAL, UTILITY, ACROBATIC, AND COMMUTER CATEGORY AIRPLANES Design and Construction Floats and Hulls § 23.753 Main float design. Each seaplane main float must meet the requirements of § 23.521. [Doc...

Floating polygon soup

OpenAIRE

Colleu , Thomas; Morin , Luce; Pateux , Stéphane; Labit , Claude

2011-01-01

International audience; This paper presents a new representation called floating polygon soup for applications like 3DTV and FTV (Free Viewpoint Television). This representation is based on 3D polygons and takes as input MVD data. It extends the previously proposed polygon soup representation which is appropriate for both compression, transmission and rendering stages. The floating polygon soup conserves these advantages while also taking into account misalignments at the view synthesis stage...

Have Floating Rates Been a Success?

Science.gov (United States)

Higham, David

1983-01-01

Floating exchange rates have not lived up to all expectations, but neither have they performed as badly as some critics have suggested. Examined are the impact of floating rates on balance of payments adjustment, domestic economic policy, and inflation and the claim that floating rates have displayed excessive fluctuations. (Author/RM)

Ferroelectric-gate field effect transistor memories device physics and applications

CERN Document Server

Ishiwara, Hiroshi; Okuyama, Masanori; Sakai, Shigeki; Yoon, Sung-Min

2016-01-01

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handic...

Nonvolatile ferroelectric memory based on PbTiO3 gated single-layer MoS2 field-effect transistor

Science.gov (United States)

Shin, Hyun Wook; Son, Jong Yeog

2018-01-01

We fabricated ferroelectric non-volatile random access memory (FeRAM) based on a field effect transistor (FET) consisting of a monolayer MoS2 channel and a ferroelectric PbTiO3 (PTO) thin film of gate insulator. An epitaxial PTO thin film was deposited on a Nb-doped SrTiO3 (Nb:STO) substrate via pulsed laser deposition. A monolayer MoS2 sheet was exfoliated from a bulk crystal and transferred to the surface of the PTO/Nb:STO. Structural and surface properties of the PTO thin film were characterized by X-ray diffraction and atomic force microscopy, respectively. Raman spectroscopy analysis was performed to identify the single-layer MoS2 sheet on the PTO/Nb:STO. We obtained mobility value (327 cm2/V·s) of the MoS2 channel at room temperature. The MoS2-PTO FeRAM FET showed a wide memory window with 17 kΩ of resistance variation which was attributed to high remnant polarization of the epitaxially grown PTO thin film. According to the fatigue resistance test for the FeRAM FET, however, the resistance states gradually varied during the switching cycles of 109. [Figure not available: see fulltext.

Effect of Coercive Voltage and Charge Injection on Performance of a Ferroelectric-Gate Thin-Film Transistor

Directory of Open Access Journals (Sweden)

P. T. Tue

2013-01-01

Full Text Available We adopted a lanthanum oxide capping layer between semiconducting channel and insulator layers for fabrication of a ferroelectric-gate thin-film transistor memory (FGT which uses solution-processed indium-tin-oxide (ITO and lead-zirconium-titanate (PZT film as a channel layer and a gate insulator, respectively. Good transistor characteristics such as a high “on/off” current ratio, high channel mobility, and a large memory window of 108, 15.0 cm2 V−1 s−1, and 3.5 V were obtained, respectively. Further, a correlation between effective coercive voltage, charge injection effect, and FGT’s memory window was investigated. It is found that the charge injection from the channel to the insulator layer, which occurs at a high electric field, dramatically influences the memory window. The memory window’s enhancement can be explained by a dual effect of the capping layer: (1 a reduction of the charge injection and (2 an increase of effective coercive voltage dropped on the insulator.

A new assessment of floating exchange rates

OpenAIRE

Waimann, D. R.

1981-01-01

The switch to floating exchange rates during the 1970s has given economists the first comprehensive opportunity to assess the arguments for and against floating. Much new work has been done on various aspects of floating exchange rate behaviour. This article attempts a limited survey of the evidence concerning two important issues—whether floating exchange rates are inherently unstable and whether they harm international trade.

Architectures for a quantum random access memory

OpenAIRE

Giovannetti, Vittorio; Lloyd, Seth; Maccone, Lorenzo

2008-01-01

A random access memory, or RAM, is a device that, when interrogated, returns the content of a memory location in a memory array. A quantum RAM, or qRAM, allows one to access superpositions of memory sites, which may contain either quantum or classical information. RAMs and qRAMs with n-bit addresses can access 2^n memory sites. Any design for a RAM or qRAM then requires O(2^n) two-bit logic gates. At first sight this requirement might seem to make large scale quantum versions of such devices ...

The floating knee

DEFF Research Database (Denmark)

Muñoz Vives, Josep; Bel, Jean-Christophe; Capel Agundez, Arantxa

2016-01-01

In 1975, Blake and McBryde established the concept of 'floating knee' to describe ipsilateral fractures of the femur and tibia.1This combination is much more than a bone lesion; the mechanism is usually a high-energy trauma in a patient with multiple injuries and a myriad of other lesions...... fixation when both fractures (femoral and tibial) are extra-articular.Plates are the 'standard of care' in cases with articular fractures.A combination of implants are required by 40% of floating knees.Associated ligamentous and meniscal lesions are common, but may be irrelevant in the case of an intra......-articular fracture which gives the worst prognosis for this type of lesion. Cite this article: Muñoz Vives K, Bel J-C, Capel Agundez A, Chana Rodríguez F, Palomo Traver J, Schultz-Larsen M, Tosounidis, T. The floating knee.EFORT Open Rev2016;1:375-382. DOI: 10.1302/2058-5241.1.000042....

Control development for floating wind

International Nuclear Information System (INIS)

Savenije, Feike; Peeringa, Johan

2014-01-01

Control of a floating wind turbine has proven to be challenging, but essential for lowering the cost of floating wind energy. Topic of a recent joint R and D project by GustoMSC, MARIN and ECN, is the concept design and verification with coupled simulations and model tests of the GustoMSC Tri-Floater. Only using an integral design approach, including mooring and control design, a cost effective system can be obtained. In this project, ECN developed a general floating wind turbine control strategy and applied this in a case study to the GustoMSC Tri-Floater and the OC3Hywind spar, both equipped with the NREL 5MW RWT. The designed controller ensures stable operation, while maintaining proper speed and power regulation. The motions of the floating support are reduced and substantial load reduction has been achieved

Protected quantum computing: interleaving gate operations with dynamical decoupling sequences.

Science.gov (United States)

Zhang, Jingfu; Souza, Alexandre M; Brandao, Frederico Dias; Suter, Dieter

2014-02-07

Implementing precise operations on quantum systems is one of the biggest challenges for building quantum devices in a noisy environment. Dynamical decoupling attenuates the destructive effect of the environmental noise, but so far, it has been used primarily in the context of quantum memories. Here, we experimentally demonstrate a general scheme for combining dynamical decoupling with quantum logical gate operations using the example of an electron-spin qubit of a single nitrogen-vacancy center in diamond. We achieve process fidelities >98% for gate times that are 2 orders of magnitude longer than the unprotected dephasing time T2.

High performance non-volatile ferroelectric copolymer memory based on a ZnO nanowire transistor fabricated on a transparent substrate

International Nuclear Information System (INIS)

Nedic, Stanko; Welland, Mark; Tea Chun, Young; Chu, Daping; Hong, Woong-Ki

2014-01-01

A high performance ferroelectric non-volatile memory device based on a top-gate ZnO nanowire (NW) transistor fabricated on a glass substrate is demonstrated. The ZnO NW channel was spin-coated with a poly (vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)) layer acting as a top-gate dielectric without buffer layer. Electrical conductance modulation and memory hysteresis are achieved by a gate electric field induced reversible electrical polarization switching of the P(VDF-TrFE) thin film. Furthermore, the fabricated device exhibits a memory window of ∼16.5 V, a high drain current on/off ratio of ∼10 5 , a gate leakage current below ∼300 pA, and excellent retention characteristics for over 10 4 s

Transistor memory devices with large memory windows, using multi-stacking of densely packed, hydrophobic charge trapping metal nanoparticle array

International Nuclear Information System (INIS)

Cho, Ikjun; Cho, Jinhan; Kim, Beom Joon; Cho, Jeong Ho; Ryu, Sook Won

2014-01-01

Organic field-effect transistor (OFET) memories have rapidly evolved from low-cost and flexible electronics with relatively low-memory capacities to memory devices that require high-capacity memory such as smart memory cards or solid-state hard drives. Here, we report the high-capacity OFET memories based on the multilayer stacking of densely packed hydrophobic metal NP layers in place of the traditional transistor memory systems based on a single charge trapping layer. We demonstrated that the memory performances of devices could be significantly enhanced by controlling the adsorption isotherm behavior, multilayer stacking structure and hydrophobicity of the metal NPs. For this study, tetraoctylammonium (TOA)-stabilized Au nanoparticles (TOA-Au NPs ) were consecutively layer-by-layer (LbL) assembled with an amine-functionalized poly(amidoamine) dendrimer (PAD). The formed (PAD/TOA-Au NP ) n films were used as a multilayer stacked charge trapping layer at the interface between the tunneling dielectric layer and the SiO 2 gate dielectric layer. For a single Au NP layer (i.e. PAD/TOA-Au NP ) 1 ) with a number density of 1.82 × 10 12 cm −2 , the memory window of the OFET memory device was measured to be approximately 97 V. The multilayer stacked OFET memory devices prepared with four Au NP layers exhibited excellent programmable memory properties (i.e. a large memory window (ΔV th ) exceeding 145 V, a fast switching speed (1 μs), a high program/erase (P/E) current ratio (greater than 10 6 ) and good electrical reliability) during writing and erasing over a relatively short time scale under an operation voltage of 100 V applied at the gate. (paper)

Gold nanoparticle-pentacene memory-transistors

OpenAIRE

Novembre , Christophe; Guerin , David; Lmimouni , Kamal; Gamrat , Christian; Vuillaume , Dominique

2008-01-01

We demonstrate an organic memory-transistor device based on a pentacene-gold nanoparticles active layer. Gold (Au) nanoparticles are immobilized on the gate dielectric (silicon dioxide) of a pentacene transistor by an amino-terminated self-assembled monolayer. Under the application of writing and erasing pulses on the gate, large threshold voltage shift (22 V) and on/off drain current ratio of ~3E4 are obtained. The hole field-effect mobility of the transistor is similar in the on and off sta...

14 CFR 25.753 - Main float design.

Science.gov (United States)

2010-01-01

... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Main float design. 25.753 Section 25.753 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION AIRCRAFT AIRWORTHINESS STANDARDS: TRANSPORT CATEGORY AIRPLANES Design and Construction Floats and Hulls § 25.753 Main float design...

Evaluation of Magnetoresistive RAM for Space Applications

Science.gov (United States)

Heidecker, Jason

2014-01-01

Magnetoresistive random-access memory (MRAM) is a non-volatile memory that exploits electronic spin, rather than charge, to store data. Instead of moving charge on and off a floating gate to alter the threshold voltage of a CMOS transistor (creating different bit states), MRAM uses magnetic fields to flip the polarization of a ferromagnetic material thus switching its resistance and bit state. These polarized states are immune to radiation-induced upset, thus making MRAM very attractive for space application. These magnetic memory elements also have infinite data retention and erase/program endurance. Presented here are results of reliability testing of two space-qualified MRAM products from Aeroflex and Honeywell.

Capacitance-voltage characteristics of MOS capacitors with Ge nanocrystals embedded in ZrO2 gate material

International Nuclear Information System (INIS)

Lee, Hye-Ryoung; Choi, Samjong; Cho, Kyoungah; Kim, Sangsig

2007-01-01

Capacitance versus voltage (C-V) curves of Ge-nanocrystals (NCs)-embedded metal-oxide-semiconductor (MOS) capacitors are characterized in this work. Ge NCs were formed in 20-nm thick ZrO 2 gate layers by ion implantation and subsequent annealing procedures. The formation of the Ge NCs in the ZrO 2 gate layers was confirmed by high-resolution transmission electron microscopy and energy dispersive spectroscopy. The C-V curves obtained from a representative MOS capacitor embedded with the Ge NCs exhibit a 3 V memory window as bias voltage varied from 9 to - 9 V and then back to the initial positive voltage, whereas MOS capacitors without Ge NCs show negligible memory windows at the same voltage range. This indicates the presence of charge storages in the Ge NCs. The counterclockwise hysteresis observed from the C-V curves implies that electrons are trapped in Ge NCs presented inside the ZrO 2 gate layer. And our experimental results obtained from capacitance versus time measurements show good retention characteristics of Ge-NCs-embedded MOS capacitors with ZrO 2 gate material for the application of NFGM

Research and development on university-collaboration type industrial and scientific technologies in fiscal 1999. Achievement report on research and development of the next generation ferroelectric thin film memory (research and development of the next generation ferroelectric memory); 1999 nendo jisedai kyoyudentai memory no kenkyu kaihatsu seika hokokusho

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-03-01

With an objective to realize the next generation ferroelectric memory, research and development has been carried out on quality improvement in ferroelectric thin films. This paper summarizes the achievements in fiscal 1999. In the search and research on new ferroelectric materials, discussions were given on such new materials as Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} in addition to the conventional PLZT and SBT. In the research on film forming processes, the sol-gel method, the organic metal gaseous phase growth method and the sputtering method were used. In improving the quality of buffer layers, research was performed to use as a buffer layer the STA/SiON laminated structure in which silicon substrates were nitrided, and a film of SrTa{sub 2}O{sub 6} (STA) being a high ferroelectric material was formed. As a result of the research, a buffer layer having thin films with thickness of 3.7 to 4.8 nm as converted to SiO{sub 2} was obtained, wherein a leak current smaller than the tunnel current of the SiO{sub 2} film having the same thickness was shown. In the search for materials and research on film forming technologies to develop function separated type memory, such pure metals as Pt, Ir and Ru and their conductive oxides were used to evaluate properties as a floating gate electrode. (NEDO)

Alpha power gates relevant information during working memory updating.

Science.gov (United States)

Manza, Peter; Hau, Chui Luen Vera; Leung, Hoi-Chung

2014-04-23

Human working memory (WM) is inherently limited, so we must filter out irrelevant information in our environment or our mind while retaining limited important relevant contents. Previous work suggests that neural oscillations in the alpha band (8-14 Hz) play an important role in inhibiting incoming distracting information during attention and selective encoding tasks. However, whether alpha power is involved in inhibiting no-longer-relevant content or in representing relevant WM content is still debated. To clarify this issue, we manipulated the amount of relevant/irrelevant information using a task requiring spatial WM updating while measuring neural oscillatory activity via EEG and localized current sources across the scalp using a surface Laplacian transform. An initial memory set of two, four, or six spatial locations was to be memorized over a delay until an updating cue was presented indicating that only one or three locations remained relevant for a subsequent recognition test. Alpha amplitude varied with memory maintenance and updating demands among a cluster of left frontocentral electrodes. Greater postcue alpha power was associated with the high relevant load conditions (six and four dots cued to reduce to three relevant) relative to the lower load conditions (four and two dots reduced to one). Across subjects, this difference in alpha power was correlated with condition differences in performance accuracy. In contrast, no significant effects of irrelevant load were observed. These findings demonstrate that, during WM updating, alpha power reflects maintenance of relevant memory contents rather than suppression of no-longer-relevant memory traces.

Modeling of strain effects on the device behaviors of ferroelectric memory field-effect transistors

International Nuclear Information System (INIS)

Yang, Feng; Hu, Guangda; Wu, Weibing; Yang, Changhong; Wu, Haitao; Tang, Minghua

2013-01-01

The influence of strains on the channel current–gate voltage behaviors and memory windows of ferroelectric memory field-effect transistors (FeMFETs) were studied using an improved model based on the Landau–Devonshire theory. ‘Channel potential–gate voltage’ ferroelectric polarization and silicon surface potential diagrams were constructed for strained single-domain BaTiO 3 FeMFETs. The compressive strains can increase (or decrease) the amplitude of transistor currents and enlarge memory windows. However, tensile strains only decrease the maximum value of transistor currents and compress memory windows. Mismatch strains were found to have a significant influence on the electrical behaviors of the devices, therefore, they must be considered in FeMFET device designing. (fast track communication)

14 CFR 29.757 - Hull and auxiliary float strength.

Science.gov (United States)

2010-01-01

... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Hull and auxiliary float strength. 29.757... AIRCRAFT AIRWORTHINESS STANDARDS: TRANSPORT CATEGORY ROTORCRAFT Design and Construction Floats and Hulls § 29.757 Hull and auxiliary float strength. The hull, and auxiliary floats if used, must withstand the...

Fast quantum logic gates with trapped-ion qubits

Science.gov (United States)

Schäfer, V. M.; Ballance, C. J.; Thirumalai, K.; Stephenson, L. J.; Ballance, T. G.; Steane, A. M.; Lucas, D. M.

2018-03-01

Quantum bits (qubits) based on individual trapped atomic ions are a promising technology for building a quantum computer. The elementary operations necessary to do so have been achieved with the required precision for some error-correction schemes. However, the essential two-qubit logic gate that is used to generate quantum entanglement has hitherto always been performed in an adiabatic regime (in which the gate is slow compared with the characteristic motional frequencies of the ions in the trap), resulting in logic speeds of the order of 10 kilohertz. There have been numerous proposals of methods for performing gates faster than this natural ‘speed limit’ of the trap. Here we implement one such method, which uses amplitude-shaped laser pulses to drive the motion of the ions along trajectories designed so that the gate operation is insensitive to the optical phase of the pulses. This enables fast (megahertz-rate) quantum logic that is robust to fluctuations in the optical phase, which would otherwise be an important source of experimental error. We demonstrate entanglement generation for gate times as short as 480 nanoseconds—less than a single oscillation period of an ion in the trap and eight orders of magnitude shorter than the memory coherence time measured in similar calcium-43 hyperfine qubits. The power of the method is most evident at intermediate timescales, at which it yields a gate error more than ten times lower than can be attained using conventional techniques; for example, we achieve a 1.6-microsecond-duration gate with a fidelity of 99.8 per cent. Faster and higher-fidelity gates are possible at the cost of greater laser intensity. The method requires only a single amplitude-shaped pulse and one pair of beams derived from a continuous-wave laser. It offers the prospect of combining the unrivalled coherence properties, operation fidelities and optical connectivity of trapped-ion qubits with the submicrosecond logic speeds that are usually

Strength Tests on Hulls and Floats

Science.gov (United States)

Matthaes, K

1942-01-01

The present report deals with strength tests on hulls and floats intended in part for the collection of construction data for the design of these components and in part for the stress analysis of the finished hulls and floats.

WindWaveFloat (WWF): Final Scientific Report

Energy Technology Data Exchange (ETDEWEB)

Weinstein, Alla; Roddier, Dominique; Banister, Kevin

2012-03-30

Principle Power Inc. and National Renewable Energy Lab (NREL) have completed a contract to assess the technical and economic feasibility of integrating wave energy converters into the WindFloat, resulting in a new concept called the WindWaveFloat (WWF). The concentration of several devices on one platform could offer a potential for both economic and operational advantages. Wind and wave energy converters can share the electrical cable and power transfer equipment to transport the electricity to shore. Access to multiple generation devices could be simplified, resulting in cost saving at the operational level. Overall capital costs may also be reduced, provided that the design of the foundation can be adapted to multiple devices with minimum modifications. Finally, the WindWaveFloat confers the ability to increase energy production from individual floating support structures, potentially leading to a reduction in levelized energy costs, an increase in the overall capacity factor, and greater stability of the electrical power delivered to the grid. The research conducted under this grant investigated the integration of several wave energy device types into the WindFloat platform. Several of the resulting system designs demonstrated technical feasibility, but the size and design constraints of the wave energy converters (technical and economic) make the WindWaveFloat concept economically unfeasible at this time. Not enough additional generation could be produced to make the additional expense associated with wave energy conversion integration into the WindFloat worthwhile.

Controlling the layer localization of gapless states in bilayer graphene with a gate voltage

Science.gov (United States)

Jaskólski, W.; Pelc, M.; Bryant, Garnett W.; Chico, Leonor; Ayuela, A.

2018-04-01

Experiments in gated bilayer graphene with stacking domain walls present topological gapless states protected by no-valley mixing. Here we research these states under gate voltages using atomistic models, which allow us to elucidate their origin. We find that the gate potential controls the layer localization of the two states, which switches non-trivially between layers depending on the applied gate voltage magnitude. We also show how these bilayer gapless states arise from bands of single-layer graphene by analyzing the formation of carbon bonds between layers. Based on this analysis we provide a model Hamiltonian with analytical solutions, which explains the layer localization as a function of the ratio between the applied potential and interlayer hopping. Our results open a route for the manipulation of gapless states in electronic devices, analogous to the proposed writing and reading memories in topological insulators.

A highly symmetrical 10 transistor 2-read/write dual-port static random access memory bitcell design in 28 nm high-k/metal-gate planar bulk CMOS technology

Science.gov (United States)

Ishii, Yuichiro; Tanaka, Miki; Yabuuchi, Makoto; Sawada, Yohei; Tanaka, Shinji; Nii, Koji; Lu, Tien Yu; Huang, Chun Hsien; Sian Chen, Shou; Tse Kuo, Yu; Lung, Ching Cheng; Cheng, Osbert

2018-04-01

We propose a highly symmetrical 10 transistor (10T) 2-read/write (2RW) dual-port (DP) static random access memory (SRAM) bitcell in 28 nm high-k/metal-gate (HKMG) planar bulk CMOS. It replaces the conventional 8T 2RW DP SRAM bitcell without any area overhead. It significantly improves the robustness of process variations and an asymmetric issue between the true and bar bitline pairs. Measured data show that read current (I read) and read static noise margin (SNM) are respectively boosted by +20% and +15 mV by introducing the proposed bitcell with enlarged pull-down (PD) and pass-gate (PG) N-channel MOSs (NMOSs). The minimum operating voltage (V min) of the proposed 256 kbit 10T DP SRAM is 0.53 V in the TT process, 25 °C under the worst access condition with read/write disturbances, and improved by 90 mV (15%) compared with the conventional one.

An electronically controlled automatic security access gate

Directory of Open Access Journals (Sweden)

Jonathan A. ENOKELA

2014-11-01

Full Text Available The security challenges being encountered in many places require electronic means of controlling access to communities, recreational centres, offices, and homes. The electronically controlled automated security access gate being proposed in this work helps to prevent an unwanted access to controlled environments. This is achieved mainly through the use of a Radio Frequency (RF transmitter-receiver pair. In the design a microcontroller is programmed to decode a given sequence of keys that is entered on a keypad and commands a transmitter module to send out this code as signal at a given radio frequency. Upon reception of this RF signal by the receiver module, another microcontroller activates a driver circuitry to operate the gate automatically. The codes for the microcontrollers were written in C language and were debugged and compiled using the KEIL Micro vision 4 integrated development environment. The resultant Hex files were programmed into the memories of the microcontrollers with the aid of a universal programmer. Software simulation was carried out using the Proteus Virtual System Modeling (VSM version 7.7. A scaled-down prototype of the system was built and tested. The electronically controlled automated security access gate can be useful in providing security for homes, organizations, and automobile terminals. The four-character password required to operate the gate gives the system an increased level of security. Due to its standalone nature of operation the system is cheaper to maintain in comparison with a manually operated type.

A 32-bit computer for large memory applications on the FASTBUS

International Nuclear Information System (INIS)

Kellner, R.; Blossom, J.M.; Hung, J.P.

1985-01-01

A FASTBUS based 32-bit computer is being built at Los Alamos National Laboratory for use in systems requiring large fast memory in the FASTBUS environment. A separate local execution bus allows data reduction to proceed concurrently with other FASTBUS operations. The computer, which can operate in either master or slave mode, includes the National Semiconductor NS32032 chip set with demand paged memory management, floating point slave processor, interrupt control unit, timers, and time-of-day clock. The 16.0 megabytes of random access memory are interleaved to allow windowed direct memory access on and off the FASTBUS at 80 megabytes per second

100-nm gate lithography for double-gate transistors

Science.gov (United States)

Krasnoperova, Azalia A.; Zhang, Ying; Babich, Inna V.; Treichler, John; Yoon, Jung H.; Guarini, Kathryn; Solomon, Paul M.

2001-09-01

The double gate field effect transistor (FET) is an exploratory device that promises certain performance advantages compared to traditional CMOS FETs. It can be scaled down further than the traditional devices because of the greater electrostatic control by the gates on the channel (about twice as short a channel length for the same gate oxide thickness), has steeper sub-threshold slope and about double the current for the same width. This paper presents lithographic results for double gate FET's developed at IBM's T. J. Watson Research Center. The device is built on bonded wafers with top and bottom gates self-aligned to each other. The channel is sandwiched between the top and bottom polysilicon gates and the gate length is defined using DUV lithography. An alternating phase shift mask was used to pattern gates with critical dimensions of 75 nm, 100 nm and 125 nm in photoresist. 50 nm gates in photoresist have also been patterned by 20% over-exposure of nominal 100 nm lines. No trim mask was needed because of a specific way the device was laid out. UV110 photoresist from Shipley on AR-3 antireflective layer were used. Process windows, developed and etched patterns are presented.

Stress analysis and mitigation measures for floating pipeline

Science.gov (United States)

Wenpeng, Guo; Yuqing, Liu; Chao, Li

2017-03-01

Pipeline-floating is a kind of accident with contingency and uncertainty associated to natural gas pipeline occurring during rainy season, which is significantly harmful to the safety of pipeline. Treatment measures against pipeline floating accident are summarized in this paper on the basis of practical project cases. Stress states of pipeline upon floating are analyzed by means of Finite Element Calculation method. The effectiveness of prevention ways and subsequent mitigation measures upon pipeline-floating are verified for giving guidance to the mitigation of such accidents.

Materials and methods for the preparation of nanocomposites

Science.gov (United States)

Nag, Angshuman; Talapin, Dmitri V.

2018-01-30

Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a method for making the same in a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, phase change layers, and sensor devices.

Coherent oscillatory networks supporting short-term memory retention.

Science.gov (United States)

Payne, Lisa; Kounios, John

2009-01-09

Accumulating evidence suggests that top-down processes, reflected by frontal-midline theta-band (4-8 Hz) electroencephalogram (EEG) oscillations, strengthen the activation of a memory set during short-term memory (STM) retention. In addition, the amplitude of posterior alpha-band (8-13 Hz) oscillations during STM retention is thought to reflect a mechanism that protects fragile STM activations from interference by gating bottom-up sensory inputs. The present study addressed two important questions about these phenomena. First, why have previous studies not consistently found memory set-size effects on frontal-midline theta? Second, how does posterior alpha participate in STM retention? To answer these questions, large-scale network connectivity during STM retention was examined by computing EEG wavelet coherence during the retention period of a modified Sternberg task using visually-presented letters as stimuli. The results showed (a) increasing theta-band coherence between frontal-midline and left temporal-parietal sites with increasing memory load, and (b) increasing alpha-band coherence between midline parietal and left temporal/parietal sites with increasing memory load. These findings support the view that theta-band coherence, rather than amplitude, is the key factor in selective top-down strengthening of the memory set and demonstrate that posterior alpha-band oscillations associated with sensory gating are involved in STM retention by participating in the STM network.

Inhibitory neurotransmission and olfactory memory in honeybees.

Science.gov (United States)

El Hassani, Abdessalam Kacimi; Giurfa, Martin; Gauthier, Monique; Armengaud, Catherine

2008-11-01

In insects, gamma-aminobutyric acid (GABA) and glutamate mediate fast inhibitory neurotransmission through ligand-gated chloride channel receptors. Both GABA and glutamate have been identified in the olfactory circuit of the honeybee. Here we investigated the role of inhibitory transmission mediated by GABA and glutamate-gated chloride channels (GluCls) in olfactory learning and memory in honeybees. We combined olfactory conditioning with injection of ivermectin, an agonist of GluCl receptors. We also injected a blocker of glutamate transporters (L-trans-PDC) or a GABA analog (TACA). We measured acquisition and retention 1, 24 and 48 h after the last acquisition trial. A low dose of ivermectin (0.01 ng/bee) impaired long-term olfactory memory (48 h) while a higher dose (0.05 ng/bee) had no effect. Double injections of ivermectin and L-trans-PDC or TACA had different effects on memory retention, depending on the doses and agents combined. When the low dose of ivermectin was injected after Ringer, long-term memory was again impaired (48 h). Such an effect was rescued by injection of both TACA and L-trans-PDC. A combination of the higher dose of ivermectin and TACA decreased retention at 48 h. We interpret these results as reflecting the involvement of both GluCl and GABA receptors in the impairment of olfactory long-term memory induced by ivermectin. These results illustrate the diversity of inhibitory transmission and its implication in long-term olfactory memory in honeybees.

The StoreGate: a Data Model for the Atlas Software Architecture

CERN Document Server

INSPIRE-00070566; Leggett, C.G.; Quarrie, D.R.; Ma, H.; Rajagopalan, S.; CHEP 2003 Computing in High Energy Physics

2003-01-01

The Atlas collaboration at CERN has adopted the Gaudi software architecture which belongs to the blackboard family: data objects produced by knowledge sources (e.g. reconstruction modules) are posted to a common in-memory data base from where other modules can access them and produce new data objects. The StoreGate has been designed, based on the Atlas requirements and the experience of other HENP systems such as Babar, CDF, CLEO, D0 and LHCB, to identify in a simple and efficient fashion (collections of) data objects based on their type and/or the modules which posted them to the Transient Data Store (the blackboard). The developer also has the freedom to use her preferred key class to uniquely identify a data object according to any other criterion. Besides this core functionality, the StoreGate provides the developers with a powerful interface to handle in a coherent fashion persistable references, object lifetimes, memory management and access control policy for the data objects in the Store. It also prov...

Gating-ML: XML-based gating descriptions in flow cytometry.

Science.gov (United States)

Spidlen, Josef; Leif, Robert C; Moore, Wayne; Roederer, Mario; Brinkman, Ryan R

2008-12-01

The lack of software interoperability with respect to gating due to lack of a standardized mechanism for data exchange has traditionally been a bottleneck, preventing reproducibility of flow cytometry (FCM) data analysis and the usage of multiple analytical tools. To facilitate interoperability among FCM data analysis tools, members of the International Society for the Advancement of Cytometry (ISAC) Data Standards Task Force (DSTF) have developed an XML-based mechanism to formally describe gates (Gating-ML). Gating-ML, an open specification for encoding gating, data transformations and compensation, has been adopted by the ISAC DSTF as a Candidate Recommendation. Gating-ML can facilitate exchange of gating descriptions the same way that FCS facilitated for exchange of raw FCM data. Its adoption will open new collaborative opportunities as well as possibilities for advanced analyses and methods development. The ISAC DSTF is satisfied that the standard addresses the requirements for a gating exchange standard.

Dispersion measurements from Sofar floats on the Iberian Abyssal plain

International Nuclear Information System (INIS)

Rees, J.M.; Gmitrowicz, M.

1989-01-01

Tracks of SOFAR floats launched on the Iberian Abyssal Plain are presented. The floats were launched in two groups in early October 1984 and mid-February 1985 to a nominal depth of 2500 m. Of these floats, 4 from the first deployment and 2 from the second functioned properly. Float signals were recorded by four autonomous listening stations at a depth of 1900 m. These preliminary results show the tracks of floats up to July 1986 and represent 3600 float days of information. The main task of the experiment was to especially study the dispersion of radioactive substances

Core-Shell Zn x Cd1- x Se/Zn y Cd1- y Se Quantum Dots for Nonvolatile Memory and Electroluminescent Device Applications

Science.gov (United States)

Al-Amoody, Fuad; Suarez, Ernesto; Rodriguez, Angel; Heller, E.; Huang, Wenli; Jain, F.

2011-08-01

This paper presents a floating quantum dot (QD) gate nonvolatile memory device using high-energy-gap Zn y Cd1- y Se-cladded Zn x Cd1- x Se quantum dots ( y > x) with tunneling layers comprising nearly lattice-matched semiconductors (e.g., ZnS/ZnMgS) on Si channels. Also presented is the fabrication of an electroluminescent (EL) device with embedded cladded ZnCdSe quantum dots. These ZnCdSe quantum dots were embedded between indium tin oxide (ITO) on glass and a top Schottky metal electrode deposited on a thin CsF barrier. These QDs, which were nucleated in a photo-assisted microwave plasma (PMP) metalorganic chemical vapor deposition (MOCVD) reactor, were grown between the source and drain regions on a p-type silicon substrate of the nonvolatile memory device. The composition of QD cladding, which relates to the value of y in Zn y Cd1- y Se, was engineered by the intensity of ultraviolet light, which controlled the incorporation of zinc in ZnCdSe. The QD quality is comparable to those deposited by other methods. Characteristics and modeling of the II-VI quantum dots as well as two diverse types of devices are presented in this paper.

Validation of salinity data from ARGO floats: Comparison between the older ARGO floats and that of later deployments

Digital Repository Service at National Institute of Oceanography (India)

Youn, Y.-H.; Lee, H.; Chang, Y.-S.; Pankajakshan, T.

Continued observation of ARGO floats or years (about 4 years) makes the conductivity sensor more vulnerable to fouling by marine life and associated drift in salinity measurements. In this paper, we address this issue by making use of floats...

Large floating structures technological advances

CERN Document Server

Wang, BT

2015-01-01

This book surveys key projects that have seen the construction of large floating structures or have attained detailed conceptual designs. This compilation of key floating structures in a single volume captures the innovative features that mark the technological advances made in this field of engineering, and will provide a useful reference for ideas, analysis, design, and construction of these unique and emerging urban projects to offshore and marine engineers, urban planners, architects and students.

Radiation damage in flash memory cells

International Nuclear Information System (INIS)

Claeys, C.; Ohyama, H.; Simoen, E.; Nakabayashi, M.; Kobayashi, K.

2002-01-01

Results are presented of a study on the effects of total ionization dose and displacement damage, induced by high-energy electrons, protons and alphas, on the performance degradation of flash memory cells integrated in a microcomputer. A conventional stacked-gate n-channel flash memory cell using a 0.8 μm n-polysilicon gate technology is employed. Irradiations by 1-MeV electrons and 20-MeV protons and alpha particles were done at room temperature. The impact of the fluence on the input characteristics, threshold voltage shift and drain and gate leakage was investigated. The threshold voltage change for proton and alpha irradiations is about three orders of magnitude larger than that for electrons. The performance degradation is mainly caused by the total ionization dose (TID) damage in the tunnel oxide and in the interpoly dielectric layer and by the creation of interface traps at the Si-SiO 2 interface. The impact of the irradiation temperature on the device degradation was studied for electrons and gammas, pointing out that irradiation at room temperature is mostly the worst case. Finally, attention is given to the impact of isochronal and isothermal annealing on the recovery of the degradation introduced after room temperature proton and electron irradiation

Influence of different types of low substituted hydroxypropyl cellulose on tableting, disintegration, and floating behaviour of floating drug delivery systems.

Science.gov (United States)

Diós, Péter; Pernecker, Tivadar; Nagy, Sándor; Pál, Szilárd; Dévay, Attila

2015-11-01

The object of the present study is to evaluate the effect of application of low-substituted hydroxypropyl cellulose (L-HPC) 11 and B1 as excipients promoting floating in gastroretentive tablets. Directly compressed tablets were formed based on experimental design. Face-centred central composite design was applied with two factors and 3 levels, where amount of sodium alginate (X 1) and L-HPC (X2 ) were the numerical factors. Applied types of L-HPCs and their 1:1 mixture were included in a categorical factor (X 3). Studied parameters were floating lag time, floating time, floating force, swelling behaviour of tablets and dissolution of paracetamol, which was used as a model active substance. Due to their physical character, L-HPCs had different water uptake and flowability. Lower flowability and lower water uptake was observed after 60 min at L-HPC 11 compared to L-HPC B1. Shorter floating times were detected at L-HPC 11 and L-HPC mixtures with 0.5% content of sodium alginate, whereas alginate was the only significant factor. Evaluating results of drug release and swelling studies on floating tablets revealed correlation, which can serve to help to understand the mechanism of action of L-HPCs in the field development of gastroretentive dosage forms.

Floating on the margins [Environmental issues for floating production platforms

International Nuclear Information System (INIS)

Grimshaw, R.

1997-01-01

The main environmental issues challenging oilfield development using floating production platforms in harsh environments such as the Atlantic frontier are discussed. These fall into two broad categories -operating conditions and biological disturbance. Particular combinations of wind and currents can lead to extremely difficult operating conditions through which floating units are expected to maintain production for economic reasons. This imposes stringent conditions on the design and construction of tanker hulls and of risers to enable them to remain connected at all times. Prediction of wind and wave forces is a crucial element of operational and safety planning. Fauna in seabed sediments disturbed by pipeline laying often relocate but some seeding back of colonies may be required in hard rock areas. Migration routes for cetaceans and the feeding grounds of marine birds must be considered and the potential long and short term damage to commercial fisheries through discharges need to be assessed. A significant risk is the interaction of sub-sea facilities and fishing gear and oil spills. Operational and accidental discharges of production chemicals, produced water containing oil, deck drainage and treated sewage, and discharges to air from flaring and utility exhausts are of major environmental concern calling for mitigation and protection measures and contingency plans. Some of the environmental issues associated with decommissioning are reduced by the use of floating platforms but there are global and national regulations governing the process. (UK)

Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide

Science.gov (United States)

Sangwan, Vinod K.; Lee, Hong-Sub; Bergeron, Hadallia; Balla, Itamar; Beck, Megan E.; Chen, Kan-Sheng; Hersam, Mark C.

2018-02-01

Memristors are two-terminal passive circuit elements that have been developed for use in non-volatile resistive random-access memory and may also be useful in neuromorphic computing. Memristors have higher endurance and faster read/write times than flash memory and can provide multi-bit data storage. However, although two-terminal memristors have demonstrated capacity for basic neural functions, synapses in the human brain outnumber neurons by more than a thousandfold, which implies that multi-terminal memristors are needed to perform complex functions such as heterosynaptic plasticity. Previous attempts to move beyond two-terminal memristors, such as the three-terminal Widrow-Hoff memristor and field-effect transistors with nanoionic gates or floating gates, did not achieve memristive switching in the transistor. Here we report the experimental realization of a multi-terminal hybrid memristor and transistor (that is, a memtransistor) using polycrystalline monolayer molybdenum disulfide (MoS2) in a scalable fabrication process. The two-dimensional MoS2 memtransistors show gate tunability in individual resistance states by four orders of magnitude, as well as large switching ratios, high cycling endurance and long-term retention of states. In addition to conventional neural learning behaviour of long-term potentiation/depression, six-terminal MoS2 memtransistors have gate-tunable heterosynaptic functionality, which is not achievable using two-terminal memristors. For example, the conductance between a pair of floating electrodes (pre- and post-synaptic neurons) is varied by a factor of about ten by applying voltage pulses to modulatory terminals. In situ scanning probe microscopy, cryogenic charge transport measurements and device modelling reveal that the bias-induced motion of MoS2 defects drives resistive switching by dynamically varying Schottky barrier heights. Overall, the seamless integration of a memristor and transistor into one multi-terminal device could

Investigation of Tank 241-AW-104 Composite Floating Layer

Energy Technology Data Exchange (ETDEWEB)

Meznarich, H. K. [Washington River Protection Solutions LLC (WRPS), Richland, WA (United States); Bolling, S. D. [Washington River Protection Solutions LLC (WRPS), Richland, WA (United States); Lachut, J. S. [Washington River Protection Solutions LLC (WRPS), Richland, WA (United States); Cooke, G. A. [Washington River Protection Solutions LLC (WRPS), Richland, WA (United States)

2018-02-27

Seven grab samples and one field blank were taken from Tank 241-AW-104 (AW-104) on June 2, 2017, and received at 222-S Laboratory on June 5, 2017. A visible layer with brown solids was observed floating on the top of two surface tank waste samples (4AW-17-02 and 4AW 17 02DUP). The floating layer from both samples was collected, composited, and submitted for chemical analyses and solid phase characterization in order to understand the composition of the floating layer. Tributyl phosphate and tridecane were higher in the floating layer than in the aqueous phase. Density in the floating layer was slightly lower than the mean density of all grab samples. Sodium nitrate and sodium carbonate were major components with a trace of gibbsite and very small size agglomerates were present in the solids of the floating layer. The supernate consisted of organics, soluble salt, and particulates.

Memristor-based memory: The sneak paths problem and solutions

KAUST Repository

Zidan, Mohammed A.

2012-10-29

In this paper, we investigate the read operation of memristor-based memories. We analyze the sneak paths problem and provide a noise margin metric to compare the various solutions proposed in the literature. We also analyze the power consumption associated with these solutions. Moreover, we study the effect of the aspect ratio of the memory array on the sneak paths. Finally, we introduce a new technique for solving the sneak paths problem by gating the memory cell using a three-terminal memistor device.

Memristor-based memory: The sneak paths problem and solutions

KAUST Repository

Zidan, Mohammed A.; Fahmy, Hossam A.H.; Hussain, Muhammad Mustafa; Salama, Khaled N.

2012-01-01

In this paper, we investigate the read operation of memristor-based memories. We analyze the sneak paths problem and provide a noise margin metric to compare the various solutions proposed in the literature. We also analyze the power consumption associated with these solutions. Moreover, we study the effect of the aspect ratio of the memory array on the sneak paths. Finally, we introduce a new technique for solving the sneak paths problem by gating the memory cell using a three-terminal memistor device.

A high performance gate drive for large gate turn off thyristors

Energy Technology Data Exchange (ETDEWEB)

Szilagyi, C.P.

1993-01-01

Past approaches to gate turn-off (GTO) gating are application oriented, inefficient and dissipate power even when inactive. They allow the gate to avalanch, and do not reduce GTO turn-on and turn-off losses. A new approach is proposed which will allow modular construction and adaptability to large GTOs in the 50 amp to 2000 amp range. The proposed gate driver can be used in large voltage source and current source inverters and other power converters. The approach consists of a power metal-oxide-silicon field effect transistor (MOSFET) technology gating unit, with associated logic and supervisory circuits and an isolated flyback converter as the dc power source for the gating unit. The gate driver formed by the gating unit and the flyback converter is designed for 4000 V isolation. Control and supervisory signals are exchanged between the gate driver and the remote control system via fiber optics. The gating unit has programmable front-porch current amplitude and pulse-width, programmable closed-loop controlled back-porch current, and a turn-off switch capable of supplying negative gate current at demand as a function of peak controllable forward anode current. The GTO turn-on, turn-off and gate avalanch losses are reduced to a minimum. The gate driver itself has minimum operating losses. Analysis, design and practical realization are reported. 19 refs., 54 figs., 1 tab.

Optimization of a PCRAM Chip for high-speed read and highly reliable reset operations

Science.gov (United States)

Li, Xiaoyun; Chen, Houpeng; Li, Xi; Wang, Qian; Fan, Xi; Hu, Jiajun; Lei, Yu; Zhang, Qi; Tian, Zhen; Song, Zhitang

2016-10-01

The widely used traditional Flash memory suffers from its performance limits such as its serious crosstalk problems, and increasing complexity of floating gate scaling. Phase change random access memory (PCRAM) becomes one of the most potential nonvolatile memories among the new memory techniques. In this paper, a 1M-bit PCRAM chip is designed based on the SMIC 40nm CMOS technology. Focusing on the read and write performance, two new circuits with high-speed read operation and highly reliable reset operation are proposed. The high-speed read circuit effectively reduces the reading time from 74ns to 40ns. The double-mode reset circuit improves the chip yield. This 1M-bit PCRAM chip has been simulated on cadence. After layout design is completed, the chip will be taped out for post-test.

Floating venous thrombi: diagnosis with spiral-CT-venography

International Nuclear Information System (INIS)

Gartenschlaeger, M.; Schmidt, J.A.

1996-01-01

Local application of contrast agent into an ipsilateral dorsal foot vein and spiral CT were used to examine 16 consecutive cases with deep venous thrombosis proven at conventional venography; in addition, colour Doppler flow imaging was performed. At conventional venography, 8/16 thrombi appeared to be floating and the remaining 8/16 were adherent to the vessel wall. Spiral-CT showed 15/16 thrombi to be adherent to the vessel wall; the floating thrombus correlated with findings in conventional venography. At colour Doppler flow imaging 3/16 thrombi were considered floating, one of them was discordant to conventional venography. The comparison of conventional venography to spiral-CT demonstrates complete agreement for adherence to vessel wall seen in conventional venography (p=1,0) and significant discordance in cases with free-floating appearance in conventional venography. Adherence of thrombi to the wall of the vessel at conventional venography is in agreement with computed tomography. Conventional venography probably overestimates the prevalence of free floating thrombi. (orig./MG) [de

Improved memory characteristics by NH3-nitrided GdO as charge storage layer for nonvolatile memory applications

International Nuclear Information System (INIS)

Liu, L.; Xu, J. P.; Ji, F.; Chen, J. X.; Lai, P. T.

2012-01-01

Charge-trapping memory capacitor with nitrided gadolinium oxide (GdO) as charge storage layer (CSL) is fabricated, and the influence of post-deposition annealing in NH 3 on its memory characteristics is investigated. Transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction are used to analyze the cross-section and interface quality, composition, and crystallinity of the stack gate dielectric, respectively. It is found that nitrogen incorporation can improve the memory window and achieve a good trade-off among the memory properties due to NH 3 -annealing-induced reasonable distribution profile of a large quantity of deep-level bulk traps created in the nitrided GdO film and reduction of shallow traps near the CSL/SiO 2 interface.

Control of Turing patterns and their usage as sensors, memory arrays, and logic gates

Science.gov (United States)

Muzika, František; Schreiber, Igor

2013-10-01

We study a model system of three diffusively coupled reaction cells arranged in a linear array that display Turing patterns with special focus on the case of equal coupling strength for all components. As a suitable model reaction we consider a two-variable core model of glycolysis. Using numerical continuation and bifurcation techniques we analyze the dependence of the system's steady states on varying rate coefficient of the recycling step while the coupling coefficients of the inhibitor and activator are fixed and set at the ratios 100:1, 1:1, and 4:5. We show that stable Turing patterns occur at all three ratios but, as expected, spontaneous transition from the spatially uniform steady state to the spatially nonuniform Turing patterns occurs only in the first case. The other two cases possess multiple Turing patterns, which are stabilized by secondary bifurcations and coexist with stable uniform periodic oscillations. For the 1:1 ratio we examine modular spatiotemporal perturbations, which allow for controllable switching between the uniform oscillations and various Turing patterns. Such modular perturbations are then used to construct chemical computing devices utilizing the multiple Turing patterns. By classifying various responses we propose: (a) a single-input resettable sensor capable of reading certain value of concentration, (b) two-input and three-input memory arrays capable of storing logic information, (c) three-input, three-output logic gates performing combinations of logical functions OR, XOR, AND, and NAND.

Herbal carrier-based floating microparticles of diltiazem ...

African Journals Online (AJOL)

Purpose: To formulate and characterize a gastroretentive floating drug delivery system for diltiazem hydrochloride using psyllium husk and sodium alginate as natural herbal carriers to improve the therapeutic effect of the drug in cardiac patients. Methods: Floating microparticles containing diltiazem hydrochloride were ...

Cholecystosonographic findings of clonorchiasis: Floating echogenic foci

Energy Technology Data Exchange (ETDEWEB)

Kim, Ho Kyun [Choong Joo X-ray Clinic, Choongjoo (Korea, Republic of)

1989-06-15

Author analysed cholecystosonographic findings in 22 patients with clonorchiasis, suspected prospectively by ultrasound and proved subsequently by demonstration of eggs in the stools. Fifteen gallbladders had nonshadowing, fusiform, discrete echogenic foci measuring 3{approx}6 mm in the lumen. Among these, the echogenic foci floated spontaneously in three cases, while in twelve cases they floated by position change or a light blow by the transducer. In the rest of the seven gallbladders, the echogenic foci were at the dependent portion. In the in vitro study with a worm suspension in saline in a surgical glove, the same echogenic foci as those seen in the gallbladders were demonstrated. The echogenic foci were precipitated in the dependent portion but float with a light blow on the glove. Author conclude that the floating echogenic foci in the lumen of the gallbladder are due to adult worms of clonorchis sinensis.

Cholecystosonographic findings of clonorchiasis: Floating echogenic foci

International Nuclear Information System (INIS)

Kim, Ho Kyun

1989-01-01

Author analysed cholecystosonographic findings in 22 patients with clonorchiasis, suspected prospectively by ultrasound and proved subsequently by demonstration of eggs in the stools. Fifteen gallbladders had nonshadowing, fusiform, discrete echogenic foci measuring 3∼6 mm in the lumen. Among these, the echogenic foci floated spontaneously in three cases, while in twelve cases they floated by position change or a light blow by the transducer. In the rest of the seven gallbladders, the echogenic foci were at the dependent portion. In the in vitro study with a worm suspension in saline in a surgical glove, the same echogenic foci as those seen in the gallbladders were demonstrated. The echogenic foci were precipitated in the dependent portion but float with a light blow on the glove. Author conclude that the floating echogenic foci in the lumen of the gallbladder are due to adult worms of clonorchis sinensis

A circuit design for multi-inputs stateful OR gate

Energy Technology Data Exchange (ETDEWEB)

Chen, Qiao; Wang, Xiaoping, E-mail: wangxiaoping@hust.edu.cn; Wan, Haibo; Yang, Ran; Zheng, Jian

2016-09-07

The in situ logic operation on memristor memory has attracted researchers' attention. In this brief, a new circuit structure that performs a stateful OR logic operation is proposed. When our OR logic is operated in series with other logic operations (IMP, AND), only two voltages should to be changed while three voltages are necessary in the previous one-step OR logic operation. In addition, this circuit structure can be extended to multi-inputs OR operation to perfect the family of logic operations on memristive memory in nanocrossbar based networks. The proposed OR gate can enable fast logic operation, reduce the number of required memristors and the sequential steps. Through analysis and simulation, the feasibility of OR operation is demonstrated and the appropriate parameters are obtained.

A circuit design for multi-inputs stateful OR gate

International Nuclear Information System (INIS)

Chen, Qiao; Wang, Xiaoping; Wan, Haibo; Yang, Ran; Zheng, Jian

2016-01-01

The in situ logic operation on memristor memory has attracted researchers' attention. In this brief, a new circuit structure that performs a stateful OR logic operation is proposed. When our OR logic is operated in series with other logic operations (IMP, AND), only two voltages should to be changed while three voltages are necessary in the previous one-step OR logic operation. In addition, this circuit structure can be extended to multi-inputs OR operation to perfect the family of logic operations on memristive memory in nanocrossbar based networks. The proposed OR gate can enable fast logic operation, reduce the number of required memristors and the sequential steps. Through analysis and simulation, the feasibility of OR operation is demonstrated and the appropriate parameters are obtained.

Sensitivity analysis of floating offshore wind farms

International Nuclear Information System (INIS)

Castro-Santos, Laura; Diaz-Casas, Vicente

2015-01-01

Highlights: • Develop a sensitivity analysis of a floating offshore wind farm. • Influence on the life-cycle costs involved in a floating offshore wind farm. • Influence on IRR, NPV, pay-back period, LCOE and cost of power. • Important variables: distance, wind resource, electric tariff, etc. • It helps to investors to take decisions in the future. - Abstract: The future of offshore wind energy will be in deep waters. In this context, the main objective of the present paper is to develop a sensitivity analysis of a floating offshore wind farm. It will show how much the output variables can vary when the input variables are changing. For this purpose two different scenarios will be taken into account: the life-cycle costs involved in a floating offshore wind farm (cost of conception and definition, cost of design and development, cost of manufacturing, cost of installation, cost of exploitation and cost of dismantling) and the most important economic indexes in terms of economic feasibility of a floating offshore wind farm (internal rate of return, net present value, discounted pay-back period, levelized cost of energy and cost of power). Results indicate that the most important variables in economic terms are the number of wind turbines and the distance from farm to shore in the costs’ scenario, and the wind scale parameter and the electric tariff for the economic indexes. This study will help investors to take into account these variables in the development of floating offshore wind farms in the future

A novel optical gating method for laser gated imaging

Science.gov (United States)

Ginat, Ran; Schneider, Ron; Zohar, Eyal; Nesher, Ofer

2013-06-01

For the past 15 years, Elbit Systems is developing time-resolved active laser-gated imaging (LGI) systems for various applications. Traditional LGI systems are based on high sensitive gated sensors, synchronized to pulsed laser sources. Elbit propriety multi-pulse per frame method, which is being implemented in LGI systems, improves significantly the imaging quality. A significant characteristic of the LGI is its ability to penetrate a disturbing media, such as rain, haze and some fog types. Current LGI systems are based on image intensifier (II) sensors, limiting the system in spectral response, image quality, reliability and cost. A novel propriety optical gating module was developed in Elbit, untying the dependency of LGI system on II. The optical gating module is not bounded to the radiance wavelength and positioned between the system optics and the sensor. This optical gating method supports the use of conventional solid state sensors. By selecting the appropriate solid state sensor, the new LGI systems can operate at any desired wavelength. In this paper we present the new gating method characteristics, performance and its advantages over the II gating method. The use of the gated imaging systems is described in a variety of applications, including results from latest field experiments.

Operational method of a ferroelectric (Fe)-NAND flash memory array

International Nuclear Information System (INIS)

Wang, Shouyu; Takahashi, Mitue; Li, Qiu-Hong; Sakai, Shigeki; Takeuchi, Ken

2009-01-01

Operations of arrayed ferroelectric (Fe)-NAND flash memory cells: erase, program and read were demonstrated for the first time using a small cell array of four word lines by two NAND strings. The memory cells and select-gate transistors were all n-channel Pt/SrBi 2 Ta 2 O 9 /Hf-Al-O/Si ferroelectric-gate field effect transistors. The erase was performed by applying 10 µs wide 7 V pulses to n- and p-wells. The program was performed by applying 10 µs wide 7 V pulses to selected word lines. Accumulated read currents of 51 programmed patterns in the Fe-NAND flash memory cell array successfully showed distribution of the two distinguishable '0' and '1' states. The margin between the two states became wider by applying a verification technique in programming a cell out of the eight. Retention times of bit-line currents were obtained over 33 h for both the '0' and '1' states in a program pattern

A nanowire magnetic memory cell based on a periodic magnetic superlattice

International Nuclear Information System (INIS)

Song, J-F; Bird, J P; Ochiai, Y

2005-01-01

We analyse the operation of a semiconductor nanowire-based memory cell. Large changes in the nanowire conductance result when the magnetization of a periodic array of nanoscale magnetic gates, which comprise the other key component of the memory cell, is switched between distinct configurations by an external magnetic field. The resulting conductance change provides the basis for a robust memory effect, which can be implemented in a semiconductor structure compatible with conventional semiconductor integrated circuits

Potential of water surface-floating microalgae for biodiesel production: Floating-biomass and lipid productivities.

Science.gov (United States)

Muto, Masaki; Nojima, Daisuke; Yue, Liang; Kanehara, Hideyuki; Naruse, Hideaki; Ujiro, Asuka; Yoshino, Tomoko; Matsunaga, Tadashi; Tanaka, Tsuyoshi

2017-03-01

Microalgae have been accepted as a promising feedstock for biodiesel production owing to their capability of converting solar energy into lipids through photosynthesis. However, the high capital and operating costs, and high energy consumption, are hampering commercialization of microalgal biodiesel. In this study, the surface-floating microalga, strain AVFF007 (tentatively identified as Botryosphaerella sudetica), which naturally forms a biofilm on surfaces, was characterized for use in biodiesel production. The biofilm could be conveniently harvested from the surface of the water by adsorbing onto a polyethylene film. The lipid productivity of strain AVFF007 was 46.3 mg/L/day, allowing direct comparison to lipid productivities of other microalgal species. The moisture content of the surface-floating biomass was 86.0 ± 1.2%, which was much lower than that of the biomass harvested using centrifugation. These results reveal the potential of this surface-floating microalgal species as a biodiesel producer, employing a novel biomass harvesting and dewatering strategy. Copyright © 2016 The Society for Biotechnology, Japan. Published by Elsevier B.V. All rights reserved.

Floating seal system for rotary devices

Science.gov (United States)

Banasiuk, H.A.

1983-08-23

This invention relates to a floating seal system for rotary devices to reduce gas leakage around the rotary device in a duct and across the face of the rotary device to an adjacent duct. The peripheral seal bodies are made of resilient material having a generally U-shaped cross section wherein one of the legs is secured to a support member and the other of the legs forms a contacting seal against the rotary device. The legs of the peripheral seal form an extended angle of intersection of about 10[degree] to about 30[degree] in the unloaded condition to provide even sealing forces around the periphery of the rotary device. The peripheral seal extends around the periphery of the support member except where intersected by radial seals which reduce gas leakage across the face of the rotary device and between adjacent duct portions. The radial seal assembly is fabricated from channel bars, the smaller channel bar being secured to the divider of the support member and a larger inverted rigid floating channel bar having its legs freely movable over the legs of the smaller channel bar forming therewith a tubular channel. A resilient flexible tube is positioned within the tubular channel for substantially its full length to reduce gas leakage across the tubular channel. A spacer extends beyond the face of the floating channel near each end of the floating channel a distance to provide desired clearance between the floating channel and the face of the rotary device. 5 figs.

An Asynchronous IEEE Floating-Point Arithmetic Unit

Directory of Open Access Journals (Sweden)

Joel R. Noche

2007-12-01

Full Text Available An asynchronous floating-point arithmetic unit is designed and tested at the transistor level usingCadence software. It uses CMOS (complementary metal oxide semiconductor and DCVS (differentialcascode voltage switch logic in a 0.35 µm process using a 3.3 V supply voltage, with dual-rail data andsingle-rail control signals using four-phase handshaking.Using 17,085 transistors, the unit handles single-precision (32-bit addition/subtraction, multiplication,division, and remainder using the IEEE 754-1985 Standard for Binary Floating-Point Arithmetic, withrounding and other operations to be handled by separate hardware or software. Division and remainderare done using a restoring subtractive algorithm; multiplication uses an additive algorithm. Exceptionsare noted by flags (and not trap handlers and the output is in single-precision.Previous work on asynchronous floating-point arithmetic units have mostly focused on single operationssuch as division. This is the first work to the authors' knowledge that can perform floating-point addition,multiplication, division, and remainder using a common datapath.

Dynamic gating window for compensation of baseline shift in respiratory-gated radiation therapy

International Nuclear Information System (INIS)

Pepin, Eric W.; Wu Huanmei; Shirato, Hiroki

2011-01-01

Purpose: To analyze and evaluate the necessity and use of dynamic gating techniques for compensation of baseline shift during respiratory-gated radiation therapy of lung tumors. Methods: Motion tracking data from 30 lung tumors over 592 treatment fractions were analyzed for baseline shift. The finite state model (FSM) was used to identify the end-of-exhale (EOE) breathing phase throughout each treatment fraction. Using duty cycle as an evaluation metric, several methods of end-of-exhale dynamic gating were compared: An a posteriori ideal gating window, a predictive trend-line-based gating window, and a predictive weighted point-based gating window. These methods were evaluated for each of several gating window types: Superior/inferior (SI) gating, anterior/posterior beam, lateral beam, and 3D gating. Results: In the absence of dynamic gating techniques, SI gating gave a 39.6% duty cycle. The ideal SI gating window yielded a 41.5% duty cycle. The weight-based method of dynamic SI gating yielded a duty cycle of 36.2%. The trend-line-based method yielded a duty cycle of 34.0%. Conclusions: Dynamic gating was not broadly beneficial due to a breakdown of the FSM's ability to identify the EOE phase. When the EOE phase was well defined, dynamic gating showed an improvement over static-window gating.

Isolated photosystem I reaction centers on a functionalized gated high electron mobility transistor.

Science.gov (United States)

Eliza, Sazia A; Lee, Ida; Tulip, Fahmida S; Mostafa, Salwa; Greenbaum, Elias; Ericson, M Nance; Islam, Syed K

2011-09-01

In oxygenic plants, photons are captured with high quantum efficiency by two specialized reaction centers (RC) called Photosystem I (PS I) and Photosystem II (PS II). The captured photon triggers rapid charge separation and the photon energy is converted into an electrostatic potential across the nanometer-scale (~6 nm) reaction centers. The exogenous photovoltages from a single PS I RC have been previously measured using the technique of Kelvin force probe microscopy (KFM). However, biomolecular photovoltaic applications require two-terminal devices. This paper presents for the first time, a micro-device for detection and characterization of isolated PS I RCs. The device is based on an AlGaN/GaN high electron mobility transistor (HEMT) structure. AlGaN/GaN HEMTs show high current throughputs and greater sensitivity to surface charges compared to other field-effect devices. PS I complexes immobilized on the floating gate of AlGaN/GaN HEMTs resulted in significant changes in the device characteristics under illumination. An analytical model has been developed to estimate the RCs of a major orientation on the functionalized gate surface of the HEMTs. © 2011 IEEE

Isolated Photosystem I Reaction Centers on a Functionalized Gated High Electron Mobility Transistor

Energy Technology Data Exchange (ETDEWEB)

Eliza, Sazia A. [University of Tennessee, Knoxville (UTK); Lee, Ida [ORNL; Tulip, Fahmida S [ORNL; Islam, Syed K [University of Tennessee, Knoxville (UTK); Mostafa, Salwa [University of Tennessee, Knoxville (UTK); Greenbaum, Elias [ORNL; Ericson, Milton Nance [ORNL

2011-01-01

In oxygenic plants, photons are captured with high quantum efficiency by two specialized reaction centers (RC) called Photosystem I (PS I) and Photosystem II (PS II). The captured photon triggers rapid charge separation and the photon energy is converted into an electrostatic potential across the nanometer-scale nm reaction centers. The exogenous photovoltages from a single PS I RC have been previously measured using the technique of Kelvin force probe microscopy (KFM). However, biomolecular photovoltaic applications require two-terminal devices. This paper presents for the first time, a micro-device for detection and characterization of isolated PS I RCs. The device is based on an AlGaN/GaN high electron mobility transistor (HEMT) structure. AlGaN/GaN HEMTs show high current throughputs and greater sensitivity to surface charges compared to other field-effect devices. PS I complexes immobilized on the floating gate of AlGaN/GaN HEMTs resulted in significant changes in the device characteristics under illumination. An analytical model has been developed to estimate the RCs of a major orientation on the functionalized gate surface of the HEMTs.

A Content-Addressable Memory structure using quantum cells in nanotechnology with energy dissipation analysis

Science.gov (United States)

Sadoghifar, Ali; Heikalabad, Saeed Rasouli

2018-05-01

Quantum-dot cellular automata is one of the recent new technologies at the nanoscale that can be a suitable replacement for CMOS technology. The circuits constructed in QCA technology have desirable features such as low power consumption, high speed and small size. These features can be more distinct in memory structures. In this paper, we design a new structure for content addressable memory cell in QCA. For this purpose, first, a unique gate is introduced for mask operation in QCA and then this gate is used to improve the performance of CAM. These structures are evaluated with QCADesigner simulator.

Aerodynamics and Motion Performance of the H-Type Floating Vertical Axis Wind Turbine

Directory of Open Access Journals (Sweden)

Ying Guo

2018-02-01

Full Text Available Aerodynamics and motion performance of the floating vertical wind turbine (VAWT were studied in this paper, where the wind turbine was H-type and the floating foundation was truss spar type. Based on the double-multiple-stream-tube theory, the formulae were deduced to calculate the aerodynamic loads acting on the wind turbine considering the motions of the floating foundation. The surge-heave-pitch nonlinear coupling equations of the H-type floating VAWT were established. Aerodynamics and motion performance of a 5 MW H-type floating VAWT was studied, and the effect of the floating foundation motions on the aerodynamic loads was analyzed. It is shown that the motions of the floating foundation on the aerodynamics cannot be ignored. The motion of the H-type floating VAWT was also compared with that of the Φ-type floating VAWT: they have the same floating foundation, rated output power, mooring system and total displacement. The results show that the H-type floating VAWT has better motion performance, and the mean values of surge, heave and pitch of the H-type floating VAWT are much smaller comparing with the Φ-type floating VAWT.

Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers

International Nuclear Information System (INIS)

Stolichnov, I; Riester, S W E; Mikheev, E; Setter, N; Rushforth, A W; Edmonds, K W; Campion, R P; Foxon, C T; Gallagher, B L; Jungwirth, T; Trodahl, H J

2011-01-01

(Ga, Mn)As and other diluted magnetic semiconductors (DMS) attract a great deal of attention for potential spintronic applications because of the possibility of controlling the magnetic properties via electrical gating. Integration of a ferroelectric gate on the DMS channel adds to the system a non-volatile memory functionality and permits nanopatterning via the polarization domain engineering. This topical review is focused on the multiferroic system, where the ferromagnetism in the (Ga, Mn)As DMS channel is controlled by the non-volatile field effect of the spontaneous polarization. Use of ferroelectric polymer gates in such heterostructures offers a viable alternative to the traditional oxide ferroelectrics generally incompatible with DMS. Here we review the proof-of-concept experiments demonstrating the ferroelectric control of ferromagnetism, analyze the performance issues of the ferroelectric gates and discuss prospects for further development of the ferroelectric/DMS heterostructures toward the multiferroic field effect transistor. (topical review)

Position control of a floating nuclear power plant

International Nuclear Information System (INIS)

Motohashi, K.; Hamamoto, T.; Sasaki, R.; Kojima, M.

1993-01-01

In spite of the increasing demand of electricity in Japan, the sites of nuclear power plants suitable for conventional seismic regulations become severely limited. Under these circumstances, several types of advanced siting technology have been developed. Among them, floating power plants have a great advantage of seismic isolation that leads to the seismic design standardization and factory fabrication. The feasibility studies or preliminary designs of floating power plants enclosed by breakwaters in the shallow sea have been carried out last two decades in U.S. and Japan. On the other hand, there are few investigations on the dynamic behavior of floating power plants in the deep sea. The offshore floating nuclear power plants have an additional advantage in that large breakwaters are not required, although the safety checking is inevitable against wind-induced waves. The tension-leg platforms which have been constructed for oil drilling in the deep sea seem to be a promising offshore siting technology of nuclear power plants. The tension-leg mooring system can considerably restrain the heave and pitch of a floating power plant because of significant stiffness in the vertical direction. Different from seismic effects, wind-induced waves may be predicted in advance by making use of ocean weather forecasts using artificial satellites. According to the wave prediction, the position of the floating plant may be controlled by adjusting the water content in ballast tanks and the length of tension-legs before the expected load arrives. The position control system can reduce the wave force acting on the plant and to avoid the unfavorable response behavior of the plant. In this study a semi-submerged circular cylinder with tension-legs is considered as a mathematical model. The configuration of circular cylinder is effective because the dynamic behavior does not depend on incident wave directions. It is also unique in that it can obtain the closed-form solution of

Boolean gates on actin filaments

International Nuclear Information System (INIS)

Siccardi, Stefano; Tuszynski, Jack A.; Adamatzky, Andrew

2016-01-01

Actin is a globular protein which forms long polar filaments in the eukaryotic cytoskeleton. Actin networks play a key role in cell mechanics and cell motility. They have also been implicated in information transmission and processing, memory and learning in neuronal cells. The actin filaments have been shown to support propagation of voltage pulses. Here we apply a coupled nonlinear transmission line model of actin filaments to study interactions between voltage pulses. To represent digital information we assign a logical TRUTH value to the presence of a voltage pulse in a given location of the actin filament, and FALSE to the pulse's absence, so that information flows along the filament with pulse transmission. When two pulses, representing Boolean values of input variables, interact, then they can facilitate or inhibit further propagation of each other. We explore this phenomenon to construct Boolean logical gates and a one-bit half-adder with interacting voltage pulses. We discuss implications of these findings on cellular process and technological applications. - Highlights: • We simulate interaction between voltage pulses using on actin filaments. • We use a coupled nonlinear transmission line model. • We design Boolean logical gates via interactions between the voltage pulses. • We construct one-bit half-adder with interacting voltage pulses.

Boolean gates on actin filaments

Energy Technology Data Exchange (ETDEWEB)

Siccardi, Stefano, E-mail: ssiccardi@2ssas.it [The Unconventional Computing Centre, University of the West of England, Bristol (United Kingdom); Tuszynski, Jack A., E-mail: jackt@ualberta.ca [Department of Oncology, University of Alberta, Edmonton, Alberta (Canada); Adamatzky, Andrew, E-mail: andrew.adamatzky@uwe.ac.uk [The Unconventional Computing Centre, University of the West of England, Bristol (United Kingdom)

2016-01-08

Actin is a globular protein which forms long polar filaments in the eukaryotic cytoskeleton. Actin networks play a key role in cell mechanics and cell motility. They have also been implicated in information transmission and processing, memory and learning in neuronal cells. The actin filaments have been shown to support propagation of voltage pulses. Here we apply a coupled nonlinear transmission line model of actin filaments to study interactions between voltage pulses. To represent digital information we assign a logical TRUTH value to the presence of a voltage pulse in a given location of the actin filament, and FALSE to the pulse's absence, so that information flows along the filament with pulse transmission. When two pulses, representing Boolean values of input variables, interact, then they can facilitate or inhibit further propagation of each other. We explore this phenomenon to construct Boolean logical gates and a one-bit half-adder with interacting voltage pulses. We discuss implications of these findings on cellular process and technological applications. - Highlights: • We simulate interaction between voltage pulses using on actin filaments. • We use a coupled nonlinear transmission line model. • We design Boolean logical gates via interactions between the voltage pulses. • We construct one-bit half-adder with interacting voltage pulses.

Floating arterial thrombus related stroke treated by intravenous thrombolysis.

Science.gov (United States)

Vanacker, P; Cordier, M; Janbieh, J; Federau, C; Michel, P

2014-01-01

The effects of intravenous thrombolysis on floating thrombi in cervical and intracranial arteries of acute ischemic stroke patients are unknown. Similarly, the best prevention methods of early recurrences remain controversial. This study aimed to describe the clinical and radiological outcome of thrombolyzed strokes with floating thrombi. We retrospectively analyzed all thrombolyzed stroke patients in our institution between 2003 and 2010 with floating thrombi on acute CT-angiography before the intravenous thrombolysis. The floating thrombus was diagnosed if an elongated thrombus of at least 5 mm length, completely surrounded by contrast on supra-aortic neck or intracerebral arteries, was present on CT-angiography. Demographics, vascular risk factors, and comorbidities were recorded and stroke etiology was determined after a standardized workup. Repeat arterial imaging was performed by CTA at 24 h or before if clinical worsening was noted and then by Doppler and MRA during the first week and at four months. Of 409 thrombolyzed stroke patients undergoing acute CT Angiography, seven (1.7%) had a floating thrombus; of these seven, six had it in the anterior circulation. Demographics, risk factors and stroke severity of these patients were comparable to the other thrombolyzed patients. After intravenous thrombolysis, the floating thrombi resolved completely at 24 h in four of the patients, whereas one had an early recurrent stroke and one developed progressive worsening. One patient developed early occlusion of the carotid artery with floating thrombus and subsequently a TIA. The two patients with a stable floating thrombus had no clinical recurrences. In the literature, only one of four reported cases were found to have a thrombolysis-related early recurrence. Long-term outcome seemed similar in thrombolyzed patients with floating thrombus, despite a possible increase of very early recurrence. It remains to be established whether acute mechanical thrombectomy could be

Can flexibility help you float?

Science.gov (United States)

Burton, L. J.; Bush, J. W. M.

2012-10-01

We consider the role of flexibility in the weight-bearing characteristics of bodies floating at an interface. Specifically, we develop a theoretical model for a two-dimensional thin floating plate that yields the maximum stable plate load and optimal stiffness for weight support. Plates small relative to the capillary length are primarily supported by surface tension, and their weight-bearing potential does not benefit from flexibility. Above a critical size comparable to the capillary length, flexibility assists interfacial flotation. For plates on the order of and larger than the capillary length, deflection from an initially flat shape increases the force resulting from hydrostatic pressure, allowing the plate to support a greater load. In this large plate limit, the shape that bears the most weight is a semicircle, which displaces the most fluid above the plate for a fixed plate length. Exact results for maximum weight-bearing plate shapes are compared to analytic approximations made in the limits of large and small plate sizes. The value of flexibility for floating to a number of biological organisms is discussed in light of our study.

Load-Dependent Increases in Delay-Period Alpha-Band Power Track the Gating of Task-Irrelevant Inputs to Working Memory

Directory of Open Access Journals (Sweden)

Andrew J. Heinz

2017-05-01

Full Text Available Studies exploring the role of neural oscillations in cognition have revealed sustained increases in alpha-band power (ABP during the delay period of verbal and visual working memory (VWM tasks. There have been various proposals regarding the functional significance of such increases, including the inhibition of task-irrelevant cortical areas as well as the active retention of information in VWM. The present study examines the role of delay-period ABP in mediating the effects of interference arising from on-going visual processing during a concurrent VWM task. Specifically, we reasoned that, if set-size dependent increases in ABP represent the gating out of on-going task-irrelevant visual inputs, they should be predictive with respect to some modulation in visual evoked potentials resulting from a task-irrelevant delay period probe stimulus. In order to investigate this possibility, we recorded the electroencephalogram while subjects performed a change detection task requiring the retention of two or four novel shapes. On a portion of trials, a novel, task-irrelevant bilateral checkerboard probe was presented mid-way through the delay. Analyses focused on examining correlations between set-size dependent increases in ABP and changes in the magnitude of the P1, N1 and P3a components of the probe-evoked response and how such increases might be related to behavior. Results revealed that increased delay-period ABP was associated with changes in the amplitude of the N1 and P3a event-related potential (ERP components, and with load-dependent changes in capacity when the probe was presented during the delay. We conclude that load-dependent increases in ABP likely play a role in supporting short-term retention by gating task-irrelevant sensory inputs and suppressing potential sources of disruptive interference.

Empirical study of the metal-nitride-oxide-semiconductor device characteristics deduced from a microscopic model of memory traps

International Nuclear Information System (INIS)

Ngai, K.L.; Hsia, Y.

1982-01-01

A graded-nitride gate dielectric metal-nitride-oxide-semiconductor (MNOS) memory transistor exhibiting superior device characteristics is presented and analyzed based on a qualitative microscopic model of the memory traps. The model is further reviewed to interpret some generic properties of the MNOS memory transistors including memory window, erase-write speed, and the retention-endurance characteristic features

14 CFR 25.533 - Hull and main float bottom pressures.

Science.gov (United States)

2010-01-01

... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Hull and main float bottom pressures. 25... AIRCRAFT AIRWORTHINESS STANDARDS: TRANSPORT CATEGORY AIRPLANES Structure Water Loads § 25.533 Hull and main float bottom pressures. (a) General. The hull and main float structure, including frames and bulkheads...

Study of the tunnelling initiated leakage current through the carbon nanotube embedded gate oxide in metal oxide semiconductor structures

International Nuclear Information System (INIS)

Chakraborty, Gargi; Sarkar, C K; Lu, X B; Dai, J Y

2008-01-01

The tunnelling currents through the gate dielectric partly embedded with semiconducting single-wall carbon nanotubes in a silicon metal-oxide-semiconductor (MOS) structure have been investigated. The application of the gate voltage to such an MOS device results in the band bending at the interface of the partly embedded oxide dielectric and the surface of the silicon, initiating tunnelling through the gate oxide responsible for the gate leakage current whenever the thickness of the oxide is scaled. A model for silicon MOS structures, where carbon nanotubes are confined in a narrow layer embedded in the gate dielectric, is proposed to investigate the direct and the Fowler-Nordheim (FN) tunnelling currents of such systems. The idea of embedding such elements in the gate oxide is to assess the possibility for charge storage for memory device applications. Comparing the FN tunnelling onset voltage between the pure gate oxide and the gate oxide embedded with carbon nanotubes, it is found that the onset voltage decreases with the introduction of the nanotubes. The direct tunnelling current has also been studied at very low gate bias, for the thin oxide MOS structure which plays an important role in scaling down the MOS transistors. The FN tunnelling current has also been studied with varying nanotube diameter

14 CFR 23.529 - Hull and main float landing conditions.

Science.gov (United States)

2010-01-01

... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Hull and main float landing conditions. 23... Water Loads § 23.529 Hull and main float landing conditions. (a) Symmetrical step, bow, and stern... directed perpendicularly to the keel line. (b) Unsymmetrical landing for hull and single float seaplanes...

Development and Evaluation of Floating Microspheres of Curcumin ...

African Journals Online (AJOL)

Purpose: To prepare and evaluate floating microspheres of curcumin for prolonged gastric residence time and increased drug bioavailability. Methods: Floating microsphere were prepared by emulsion solvent diffusion method, using hydroxylpropyl methylcellulose (HPMC), ethyl cellulose (EC), Eudragit S 100 polymer in ...

Vertical pump with free floating check valve

International Nuclear Information System (INIS)

Lindsay, M.

1980-01-01

A vertical pump is described which has a bottom discharge with a free floating check valve disposed in the outlet plenum thereof. The free floating check valve comprises a spherical member with a hemispherical cage-like member attached thereto which is capable of allowing forward or reverse flow under appropriate conditions while preventing reverse flow under inappropriate conditions

Development of floating strip micromegas detectors

Energy Technology Data Exchange (ETDEWEB)

Bortfeldt, Jonathan

2014-04-28

Micromegas are high-rate capable, high-resolution micro-pattern gaseous detectors. Square meter sized resistive strip Micromegas are foreseen as replacement of the currently used precision tracking detectors in the Small Wheel, which is part of the forward region of the ATLAS muon spectrometer. The replacement is necessary to ensure tracking and triggering performance of the muon spectrometer after the luminosity increase of the Large Hadron Collider beyond its design value of 10{sup 34} cm{sup -2}s{sup -1} around 2020. In this thesis a novel discharge tolerant floating strip Micromegas detector is presented and described. By individually powering copper anode strips, the effects of a discharge are confined to a small region of the detector. This reduces the impact of discharges on the efficiency by three orders of magnitude, compared to a standard Micromegas. The physics of the detector is studied and discussed in detail. Several detectors are developed: A 6.4 x 6.4 cm{sup 2} floating strip Micromegas with exchangeable SMD capacitors and resistors allows for an optimization of the floating strip principle. The discharge behavior is investigated on this device in depth. The microscopic structure of discharges is quantitatively explained by a detailed detector simulation. A 48 x 50 cm{sup 2} floating strip Micromegas is studied in high energy pion beams. Its homogeneity with respect to pulse height, efficiency and spatial resolution is investigated. The good performance in high-rate background environments is demonstrated in cosmic muon tracking measurements with a 6.4 x 6.4 cm{sup 2} floating strip Micromegas under lateral irradiation with 550 kHz 20 MeV proton beams. A floating strip Micromegas doublet with low material budget is developed for ion tracking without limitations from multiple scattering in imaging applications during medical ion therapy. Highly efficient tracking of 20 MeV protons at particle rates of 550 kHz is possible. The reconstruction of the

Development of floating strip micromegas detectors

International Nuclear Information System (INIS)

Bortfeldt, Jonathan

2014-01-01

Micromegas are high-rate capable, high-resolution micro-pattern gaseous detectors. Square meter sized resistive strip Micromegas are foreseen as replacement of the currently used precision tracking detectors in the Small Wheel, which is part of the forward region of the ATLAS muon spectrometer. The replacement is necessary to ensure tracking and triggering performance of the muon spectrometer after the luminosity increase of the Large Hadron Collider beyond its design value of 10 34 cm -2 s -1 around 2020. In this thesis a novel discharge tolerant floating strip Micromegas detector is presented and described. By individually powering copper anode strips, the effects of a discharge are confined to a small region of the detector. This reduces the impact of discharges on the efficiency by three orders of magnitude, compared to a standard Micromegas. The physics of the detector is studied and discussed in detail. Several detectors are developed: A 6.4 x 6.4 cm 2 floating strip Micromegas with exchangeable SMD capacitors and resistors allows for an optimization of the floating strip principle. The discharge behavior is investigated on this device in depth. The microscopic structure of discharges is quantitatively explained by a detailed detector simulation. A 48 x 50 cm 2 floating strip Micromegas is studied in high energy pion beams. Its homogeneity with respect to pulse height, efficiency and spatial resolution is investigated. The good performance in high-rate background environments is demonstrated in cosmic muon tracking measurements with a 6.4 x 6.4 cm 2 floating strip Micromegas under lateral irradiation with 550 kHz 20 MeV proton beams. A floating strip Micromegas doublet with low material budget is developed for ion tracking without limitations from multiple scattering in imaging applications during medical ion therapy. Highly efficient tracking of 20 MeV protons at particle rates of 550 kHz is possible. The reconstruction of the track inclination in a single

Floating barrier

Energy Technology Data Exchange (ETDEWEB)

1968-05-06

This floating barrier consists of relatively long elements which can be connected to form a practically continuous assembly. Each element consists of an inflatable tube with an apron of certain height, made of impregnated fabric which is resistant to ocean water and also to hydrocarbons. Means for connecting one element to the following one, and means for attaching ballast to the apron are also provided.

Micromechanisms with floating pivot

Science.gov (United States)

Garcia, Ernest J.

2001-03-06

A new class of tilting micromechanical mechanisms have been developed. These new mechanisms use floating pivot structures to relieve some of the problems encountered in the use of solid flexible pivots.

New insights on poly(vinyl acetate)-based coated floating tablets: characterisation of hydration and CO2 generation by benchtop MRI and its relation to drug release and floating strength.

Science.gov (United States)

Strübing, Sandra; Abboud, Tâmara; Contri, Renata Vidor; Metz, Hendrik; Mäder, Karsten

2008-06-01

The purpose of this study was to investigate the mechanism of floating and drug release behaviour of poly(vinyl acetate)-based floating tablets with membrane controlled drug delivery. Propranolol HCl containing tablets with Kollidon SR as an excipient for direct compression and different Kollicoat SR 30 D/Kollicoat IR coats varying from 10 to 20mg polymer/cm2 were investigated regarding drug release in 0.1N HCl. Furthermore, the onset of floating, the floating duration and the floating strength of the device were determined. In addition, benchtop MRI studies of selected samples were performed. Coated tablets with 10mg polymer/cm2 SR/IR, 8.5:1.5 coat exhibited the shortest lag times prior to drug release and floating onset, the fastest increase in and highest maximum values of floating strength. The drug release was delayed efficiently within a time interval of 24 h by showing linear drug release characteristics. Poly(vinyl acetate) proved to be an appropriate excipient to ensure safe and reliable drug release. Floating strength measurements offered the possibility to quantify the floating ability of the developed systems and thus to compare different formulations more efficiently. Benchtop MRI studies allowed a deeper insight into drug release and floating mechanisms noninvasively and continuously.

Pengaruh Frekuensi Melihat Iklan Floating terhadap Tingkat Kesadaran Merek

Directory of Open Access Journals (Sweden)

Forddhanto Bimantoro

2013-11-01

Full Text Available Abstract: Floating ad  is online advertisement aiming to stimulate brand awareness by increasing familiarity through reexposing advertisement. This research examines the influence of ARCO Depok members’ exposure of floating ad at www.detik.com to their brand awareness about Samsung LED TV. The frequency of consuming the advertisement is differentiated into three categories, namely three times, five times and never. The result shows that the respondents’ exposure of floating ad could influence the level of brand awareness as much as 40.7%. However, this tendency was not represented in the category of five times. The result also shows that the only control variable which was able to significantly influence the level of brand awareness was the variable of respondents’ visitation to the site of detik.com. Abstrak: Iklan floating merupakan iklan di media internet yang bertujuan mencapai kesadaran merek dengan cara meningkatkan familiarity melalui frekuensi pengulangan iklan. Frekuensi melihat iklan floating dibedakan  dengan memilah kelompok responden yang dikenai frekuensi melihat iklan 3 kali, 5 kali dan tidak melihat iklan. Penelitian ini menguji pengaruh frekuensi melihat iklan floating di www.detik.com terhadap tingkat kesadaran merek Samsung LED TV pada warga ARCO Depok, Jawa Barat. Hasil penelitian menunjukkan bahwa frekuensi melihat iklan floating dapat mempengaruhi tingkat kesadaran merek sebesar 40,7%; namun tidak terbukti pada kelompok yang melihat iklan sebanyak lima kali. Variabel kontrol yang mampu mempengaruhi tingkat kesadaran merek secara signifikan hanya variabel kunjungan responden ke detik.com.Â

Capture of free-floating planets by planetary systems

Science.gov (United States)

Goulinski, Nadav; Ribak, Erez N.

2018-01-01

Evidence of exoplanets with orbits that are misaligned with the spin of the host star may suggest that not all bound planets were born in the protoplanetary disc of their current planetary system. Observations have shown that free-floating Jupiter-mass objects can exceed the number of stars in our Galaxy, implying that capture scenarios may not be so rare. To address this issue, we construct a three-dimensional simulation of a three-body scattering between a free-floating planet and a star accompanied by a Jupiter-mass bound planet. We distinguish between three different possible scattering outcomes, where the free-floating planet may get weakly captured after the brief interaction with the binary, remain unbound or 'kick out' the bound planet and replace it. The simulation was performed for different masses of the free-floating planets and stars, as well as different impact parameters, inclination angles and approach velocities. The outcome statistics are used to construct an analytical approximation of the cross-section for capturing a free-floating planet by fitting their dependence on the tested variables. The analytically approximated cross-section is used to predict the capture rate for these kinds of objects, and to estimate that about 1 per cent of all stars are expected to experience a temporary capture of a free-floating planet during their lifetime. Finally, we propose additional physical processes that may increase the capture statistics and whose contribution should be considered in future simulations in order to determine the fate of the temporarily captured planets.

Numerical study on aerodynamic damping of floating vertical axis wind turbines

Science.gov (United States)

Cheng, Zhengshun; Aagaard Madsen, Helge; Gao, Zhen; Moan, Torgeir

2016-09-01

Harvesting offshore wind energy resources using floating vertical axis wind turbines (VAWTs) has attracted an increasing interest in recent years. Due to its potential impact on fatigue damage, the aerodynamic damping should be considered in the preliminary design of a floating VAWT based on the frequency domain method. However, currently the study on aerodynamic damping of floating VAWTs is very limited. Due to the essential difference in aerodynamic load characteristics, the aerodynamic damping of a floating VAWT could be different from that of a floating horizontal axis wind turbine (HAWT). In this study, the aerodynamic damping of floating VAWTs was studied in a fully coupled manner, and its influential factors and its effects on the motions, especially the pitch motion, were demonstrated. Three straight-bladed floating VAWTs with identical solidity and with a blade number varying from two to four were considered. The aerodynamic damping under steady and turbulent wind conditions were estimated using fully coupled aero-hydro-servo-elastic time domain simulations. It is found that the aerodynamic damping ratio of the considered floating VAWTs ranges from 1.8% to 5.3%. Moreover, the aerodynamic damping is almost independent of the rotor azimuth angle, and is to some extent sensitive to the blade number.

Numerical study on aerodynamic damping of floating vertical axis wind turbines

DEFF Research Database (Denmark)

Cheng, Zhengshun; Aagaard Madsen, Helge; Gao, Zhen

2016-01-01

Harvesting offshore wind energy resources using floating vertical axis wind turbines (VAWTs) has attracted an increasing interest in recent years. Due to its potential impact on fatigue damage, the aerodynamic damping should be considered in the preliminary design of a floating VAWT based...... on the frequency domain method. However, currently the study on aerodynamic damping of floating VAWTs is very limited. Due to the essential difference in aerodynamic load characteristics, the aerodynamic damping of a floating VAWT could be different from that of a floating horizontal axis wind turbine (HAWT...... to four were considered. The aerodynamic damping under steady and turbulent wind conditions were estimated using fully coupled aero-hydro-servo-elastic time domain simulations. It is found that the aerodynamic damping ratio of the considered floating VAWTs ranges from 1.8% to 5.3%. Moreover...

A review on design and study of floating plant mooring systems

International Nuclear Information System (INIS)

Nakamura, Hideharu; Kashima, Ryoichi; Hagiwara, Yutaka; Matsuura, Shinichi; Shiojiri, Hiroo

1985-01-01

There exists a widespread anticipation among nuclear power engineers that a floating nuclear power plant (NPP) may have a couple of advantages over other types; such as seismic isolation, standardizations of design and manufacturing etc. However, it also seems that a number of problems still remain to be clarified to adopt the floating NPP in Japan. One of them is magnitude of external forces acting on floating structure, which depend on mooring system. The purpose of the present report is to survey various kinds of mooring systems, structural analyses and design criteria, and examples of the same scale floating structures taking into consideration of the floating NPP which displaces 300,000 Ton, and furthermore, to discuss the future problems in regard to the mooring system still to be investigated before the floating plants can be constructed. (author)

14 CFR 23.533 - Hull and main float bottom pressures.

Science.gov (United States)

2010-01-01

... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Hull and main float bottom pressures. 23... Water Loads § 23.533 Hull and main float bottom pressures. (a) General. The hull and main float....00213; K2=hull station weighing factor, in accordance with figure 2 of appendix I of this part; VS1...

Quantifying the Impact of Single Bit Flips on Floating Point Arithmetic

Energy Technology Data Exchange (ETDEWEB)

Elliott, James J [ORNL; Mueller, Frank [North Carolina State University; Stoyanov, Miroslav K [ORNL; Webster, Clayton G [ORNL

2013-08-01

In high-end computing, the collective surface area, smaller fabrication sizes, and increasing density of components have led to an increase in the number of observed bit flips. If mechanisms are not in place to detect them, such flips produce silent errors, i.e. the code returns a result that deviates from the desired solution by more than the allowed tolerance and the discrepancy cannot be distinguished from the standard numerical error associated with the algorithm. These phenomena are believed to occur more frequently in DRAM, but logic gates, arithmetic units, and other circuits are also susceptible to bit flips. Previous work has focused on algorithmic techniques for detecting and correcting bit flips in specific data structures, however, they suffer from lack of generality and often times cannot be implemented in heterogeneous computing environment. Our work takes a novel approach to this problem. We focus on quantifying the impact of a single bit flip on specific floating-point operations. We analyze the error induced by flipping specific bits in the most widely used IEEE floating-point representation in an architecture-agnostic manner, i.e., without requiring proprietary information such as bit flip rates and the vendor-specific circuit designs. We initially study dot products of vectors and demonstrate that not all bit flips create a large error and, more importantly, expected value of the relative magnitude of the error is very sensitive on the bit pattern of the binary representation of the exponent, which strongly depends on scaling. Our results are derived analytically and then verified experimentally with Monte Carlo sampling of random vectors. Furthermore, we consider the natural resilience properties of solvers based on the fixed point iteration and we demonstrate how the resilience of the Jacobi method for linear equations can be significantly improved by rescaling the associated matrix.

Measurements of dose with individual FAMOS transistors

Energy Technology Data Exchange (ETDEWEB)

Scheick, L.Z.; McNulty, P.J.; Roth, D.R.; Davis, M.G.; Mason, B.E.

1999-12-01

A new method is described for measuring the doses absorbed by microstructures from an exposure to ionizing radiation. The decrease in the duration of UltraViolet light (UV) exposure required to erase each cell of a commercial UltraViolet erasable Programmable Read Only Memory (UVPROM) correlates with the dose absorbed by the floating gate of that transistor. This technique facilitates analysis of the microdose distribution across the array and the occurrence of Single Event Upset (SEU) like anomalous shifts due to rare large energy-deposition events.

Measurements of dose with individual FAMOS transistors

International Nuclear Information System (INIS)

Scheick, L.Z.; McNulty, P.J.; Roth, D.R.; Davis, M.G.; Mason, B.E.

1999-01-01

A new method is described for measuring the doses absorbed by microstructures from an exposure to ionizing radiation. The decrease in the duration of UltraViolet light (UV) exposure required to erase each cell of a commercial UltraViolet erasable Programmable Read Only Memory (UVPROM) correlates with the dose absorbed by the floating gate of that transistor. This technique facilitates analysis of the microdose distribution across the array and the occurrence of Single Event Upset (SEU) like anomalous shifts due to rare large energy-deposition events

Multifractal analysis of managed and independent float exchange rates

Science.gov (United States)

Stošić, Darko; Stošić, Dusan; Stošić, Tatijana; Stanley, H. Eugene

2015-06-01

We investigate multifractal properties of daily price changes in currency rates using the multifractal detrended fluctuation analysis (MF-DFA). We analyze managed and independent floating currency rates in eight countries, and determine the changes in multifractal spectrum when transitioning between the two regimes. We find that after the transition from managed to independent float regime the changes in multifractal spectrum (position of maximum and width) indicate an increase in market efficiency. The observed changes are more pronounced for developed countries that have a well established trading market. After shuffling the series, we find that the multifractality is due to both probability density function and long term correlations for managed float regime, while for independent float regime multifractality is in most cases caused by broad probability density function.

WindFloat Pacific Project, Final Scientific and Technical Report

Energy Technology Data Exchange (ETDEWEB)

Banister, Kevin [Principle Power, Inc., Emeryville, CA (United States)

2017-01-17

PPI’s WindFloat Pacific project (WFP) was an up to 30 MW floating offshore wind demonstration project proposed off the Coast of Oregon. The project was to be sited approximately 18 miles due west of Coos Bay, in over 1000 ft. of water, and is the first floating offshore wind array proposed in the United States, and the first offshore wind project of any kind proposed off the West Coast. PPI’s WindFloat, a semi-submersible foundation designed for high-capacity (6MW+) offshore wind turbines, is at the heart of the proposed project, and enables access to the world class wind resource at the project site and, equally, to other deep water, high wind resource areas around the country.

Extreme Value Predictions for Wave- and Wind-induced Loads on Floating Offshore Wind Turbines using FORM

DEFF Research Database (Denmark)

Joensen, Sunvard; Jensen, Jørgen Juncher; Mansour, Alaa E.

2007-01-01

duration of the time domain simulations needed (typically 60-300s to cover the hy-drodynamic memory effects in the response) the calcu-lation of the mean out-crossing rates of a given response are very fast. Thus complicated non-linear effects can be included. The FORM analysis also identifies the most...... probable wave episodes leading to given re-sponses. As an example the motions of floating foundations for offshore wind turbines are analysed taking into consid-eration both the wave and wind induced loads and con-sidering different mooring systems. The possible large horizontal motions make it important...

Linear gate

International Nuclear Information System (INIS)

Suwono.

1978-01-01

A linear gate providing a variable gate duration from 0,40μsec to 4μsec was developed. The electronic circuity consists of a linear circuit and an enable circuit. The input signal can be either unipolar or bipolar. If the input signal is bipolar, the negative portion will be filtered. The operation of the linear gate is controlled by the application of a positive enable pulse. (author)

Charge storage and tunneling mechanism of Ni nanocrystals embedded HfOx film

Science.gov (United States)

Zhu, H. X.; Zhang, T.; Wang, R. X.; Zhang, Y. Y.; Li, L. T.; Qiu, X. Y.

2016-05-01

A nano-floating gate memory structure based on Ni nanocrystals (NCs) embedded HfOx film is deposited by means of radio-frequency magnetron sputtering. Microstructure investigations reveal that self-organized Ni-NCs with diameters of 4-8 nm are well dispersed in amorphous HfOx matrix. Pt/Ni-NCs embedded HfOx/Si/Ag capacitor structures exhibit voltage-dependent capacitance-voltage hysteresis, and a maximum flat-band voltage shift of 1.5 V, corresponding to a charge storage density of 6.0 × 1012 electrons/cm2, is achieved. These capacitor memory cells exhibit good endurance characteristic up to 4 × 104 cycles and excellent retention performance of 105 s, fulfilling the requirements of next generation non-volatile memory devices. Schottky tunneling is proven to be responsible for electrons tunneling in these capacitors.

Fabrication of InGaZnO Nonvolatile Memory Devices at Low Temperature of 150 degrees C for Applications in Flexible Memory Displays and Transparency Coating on Plastic Substrates.

Science.gov (United States)

Hanh, Nguyen Hong; Jang, Kyungsoo; Yi, Junsin

2016-05-01

We directly deposited amorphous InGaZnO (a-IGZO) nonvolatile memory (NVM) devices with oxynitride-oxide-dioxide (OOO) stack structures on plastic substrate by a DC pulsed magnetron sputtering and inductively coupled plasma chemical vapor deposition (ICPCVD) system, using a low-temperature of 150 degrees C. The fabricated bottom gate a-IGZO NVM devices have a wide memory window with a low operating voltage during programming and erasing, due to an effective control of the gate dielectrics. In addition, after ten years, the memory device retains a memory window of over 73%, with a programming duration of only 1 ms. Moreover, the a-IGZO films show high optical transmittance of over 85%, and good uniformity with a root mean square (RMS) roughness of 0.26 nm. This film is a promising candidate to achieve flexible displays and transparency on plastic substrates because of the possibility of low-temperature deposition, and the high transparent properties of a-IGZO films. These results demonstrate that the a-IGZO NVM devices obtained at low-temperature have a suitable programming and erasing efficiency for data storage under low-voltage conditions, in combination with excellent charge retention characteristics, and thus show great potential application in flexible memory displays.

A novel grounded to floating admittance converter with electronic control

Science.gov (United States)

Prasad, Dinesh; Ahmad, Javed; Srivastava, Mayank

2018-01-01

This article suggests a new grounded to floating admittance convertor employing only two voltage differencing transconductance amplifiers (VDTAs). The proposed circuit can convert any arbitrary grounded admittance into floating admittance with electronically controllable scaling factor. The presented converter enjoys the following beneficial: (1) no requirement of any additional passive element (2) scaling factor can be tuned electronically through bias currents of VDTAs (3) no matching constraint required (4) low values of active/passive sensitivity indexes and (5) excellent non ideal behavior that indicates no deviation in circuit behavior even under non ideal environment. Application of the proposed configuration in realization of floating resistor and floating capacitor has been presented and the workability of these floating elements has been confirmed by active filter design examples. SPICE simulations have been performed to demonstrate the performance of the proposed circuits.

New gate opening hours

CERN Multimedia

GS Department

2009-01-01

Please note the new opening hours of the gates as well as the intersites tunnel from the 19 May 2009: GATE A 7h - 19h GATE B 24h/24 GATE C 7h - 9h\t17h - 19h GATE D 8h - 12h\t13h - 16h GATE E 7h - 9h\t17h - 19h Prévessin 24h/24 The intersites tunnel will be opened from 7h30 to 18h non stop. GS-SEM Group Infrastructure and General Services Department

Operation of a quantum dot in the finite-state machine mode: Single-electron dynamic memory

International Nuclear Information System (INIS)

Klymenko, M. V.; Klein, M.; Levine, R. D.; Remacle, F.

2016-01-01

A single electron dynamic memory is designed based on the non-equilibrium dynamics of charge states in electrostatically defined metallic quantum dots. Using the orthodox theory for computing the transfer rates and a master equation, we model the dynamical response of devices consisting of a charge sensor coupled to either a single and or a double quantum dot subjected to a pulsed gate voltage. We show that transition rates between charge states in metallic quantum dots are characterized by an asymmetry that can be controlled by the gate voltage. This effect is more pronounced when the switching between charge states corresponds to a Markovian process involving electron transport through a chain of several quantum dots. By simulating the dynamics of electron transport we demonstrate that the quantum box operates as a finite-state machine that can be addressed by choosing suitable shapes and switching rates of the gate pulses. We further show that writing times in the ns range and retention memory times six orders of magnitude longer, in the ms range, can be achieved on the double quantum dot system using experimentally feasible parameters, thereby demonstrating that the device can operate as a dynamic single electron memory.

Operation of a quantum dot in the finite-state machine mode: Single-electron dynamic memory

Energy Technology Data Exchange (ETDEWEB)

Klymenko, M. V. [Department of Chemistry, University of Liège, B4000 Liège (Belgium); Klein, M. [The Fritz Haber Center for Molecular Dynamics and the Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Levine, R. D. [The Fritz Haber Center for Molecular Dynamics and the Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Crump Institute for Molecular Imaging and Department of Molecular and Medical Pharmacology, David Geffen School of Medicine and Department of Chemistry and Biochemistry, University of California, Los Angeles, California 90095 (United States); Remacle, F., E-mail: fremacle@ulg.ac.be [Department of Chemistry, University of Liège, B4000 Liège (Belgium); The Fritz Haber Center for Molecular Dynamics and the Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904 (Israel)

2016-07-14

A single electron dynamic memory is designed based on the non-equilibrium dynamics of charge states in electrostatically defined metallic quantum dots. Using the orthodox theory for computing the transfer rates and a master equation, we model the dynamical response of devices consisting of a charge sensor coupled to either a single and or a double quantum dot subjected to a pulsed gate voltage. We show that transition rates between charge states in metallic quantum dots are characterized by an asymmetry that can be controlled by the gate voltage. This effect is more pronounced when the switching between charge states corresponds to a Markovian process involving electron transport through a chain of several quantum dots. By simulating the dynamics of electron transport we demonstrate that the quantum box operates as a finite-state machine that can be addressed by choosing suitable shapes and switching rates of the gate pulses. We further show that writing times in the ns range and retention memory times six orders of magnitude longer, in the ms range, can be achieved on the double quantum dot system using experimentally feasible parameters, thereby demonstrating that the device can operate as a dynamic single electron memory.

Overcoming the drawback of lower sense margin in tunnel FET based dynamic memory along with enhanced charge retention and scalability

Science.gov (United States)

Navlakha, Nupur; Kranti, Abhinav

2017-11-01

The work reports on the use of a planar tri-gate tunnel field effect transistor (TFET) to operate as dynamic memory at 85 °C with an enhanced sense margin (SM). Two symmetric gates (G1) aligned to the source at a partial region of intrinsic film result into better electrostatic control that regulates the read mechanism based on band-to-band tunneling, while the other gate (G2), positioned adjacent to the first front gate is responsible for charge storage and sustenance. The proposed architecture results in an enhanced SM of ˜1.2 μA μm-1 along with a longer retention time (RT) of ˜1.8 s at 85 °C, for a total length of 600 nm. The double gate architecture towards the source increases the tunneling current and also reduces short channel effects, enhancing SM and scalability, thereby overcoming the critical bottleneck faced by TFET based dynamic memories. The work also discusses the impact of overlap/underlap and interface charges on the performance of TFET based dynamic memory. Insights into device operation demonstrate that the choice of appropriate architecture and biases not only limit the trade-off between SM and RT, but also result in improved scalability with drain voltage and total length being scaled down to 0.8 V and 115 nm, respectively.

ISAC's Gating-ML 2.0 data exchange standard for gating description.

Science.gov (United States)

Spidlen, Josef; Moore, Wayne; Brinkman, Ryan R

2015-07-01

The lack of software interoperability with respect to gating has traditionally been a bottleneck preventing the use of multiple analytical tools and reproducibility of flow cytometry data analysis by independent parties. To address this issue, ISAC developed Gating-ML, a computer file format to encode and interchange gates. Gating-ML 1.5 was adopted and published as an ISAC Candidate Recommendation in 2008. Feedback during the probationary period from implementors, including major commercial software companies, instrument vendors, and the wider community, has led to a streamlined Gating-ML 2.0. Gating-ML has been significantly simplified and therefore easier to support by software tools. To aid developers, free, open source reference implementations, compliance tests, and detailed examples are provided to stimulate further commercial adoption. ISAC has approved Gating-ML as a standard ready for deployment in the public domain and encourages its support within the community as it is at a mature stage of development having undergone extensive review and testing, under both theoretical and practical conditions. © 2015 International Society for Advancement of Cytometry.

Determination of prospective displacement-based gate threshold for respiratory-gated radiation delivery from retrospective phase-based gate threshold selected at 4D CT simulation

International Nuclear Information System (INIS)

Vedam, S.; Archambault, L.; Starkschall, G.; Mohan, R.; Beddar, S.

2007-01-01

Four-dimensional (4D) computed tomography (CT) imaging has found increasing importance in the localization of tumor and surrounding normal structures throughout the respiratory cycle. Based on such tumor motion information, it is possible to identify the appropriate phase interval for respiratory gated treatment planning and delivery. Such a gating phase interval is determined retrospectively based on tumor motion from internal tumor displacement. However, respiratory-gated treatment is delivered prospectively based on motion determined predominantly from an external monitor. Therefore, the simulation gate threshold determined from the retrospective phase interval selected for gating at 4D CT simulation may not correspond to the delivery gate threshold that is determined from the prospective external monitor displacement at treatment delivery. The purpose of the present work is to establish a relationship between the thresholds for respiratory gating determined at CT simulation and treatment delivery, respectively. One hundred fifty external respiratory motion traces, from 90 patients, with and without audio-visual biofeedback, are analyzed. Two respiratory phase intervals, 40%-60% and 30%-70%, are chosen for respiratory gating from the 4D CT-derived tumor motion trajectory. From residual tumor displacements within each such gating phase interval, a simulation gate threshold is defined based on (a) the average and (b) the maximum respiratory displacement within the phase interval. The duty cycle for prospective gated delivery is estimated from the proportion of external monitor displacement data points within both the selected phase interval and the simulation gate threshold. The delivery gate threshold is then determined iteratively to match the above determined duty cycle. The magnitude of the difference between such gate thresholds determined at simulation and treatment delivery is quantified in each case. Phantom motion tests yielded coincidence of simulation

Floating Inductance and FDNR Using Positive Polarity Current Conveyors

Directory of Open Access Journals (Sweden)

K. Pal

2004-01-01

Full Text Available A generalized circuit based on five positive polarity second-generation current conveyors is introduced. The circuit simulates a floating inductance, capacitor floatation circuit and floating fdnr. All these circuits use grounded capacitors.

Sabrewing: A lightweight architecture for combined floating-point and integer arithmetic

NARCIS (Netherlands)

Bruintjes, Tom; Walters, K.H.G.; Gerez, Sabih H.; Molenkamp, Egbert; Smit, Gerardus Johannes Maria

In spite of the fact that floating-point arithmetic is costly in terms of silicon area, the joint design of hardware for floating-point and integer arithmetic is seldom considered. While components like multipliers and adders can potentially be shared, floating-point and integer units in

Production of floating pellets using appropriate methods | Suleiman ...

African Journals Online (AJOL)

The study investigated into the use of floating materials like candle wax, yeast and baking powder to achieve pellet buoyancy. Ten diets were formulated with incorporation of floating agents; Diet I-YBCT- (yeast-baking powder in cold water -toasted), Diet II-YBCU- (yeast-baking powder in cold water -untoasted) Diet III ...

Adaptive memory: the survival-processing memory advantage is not due to negativity or mortality salience.

Science.gov (United States)

Bell, Raoul; Röer, Jan P; Buchner, Axel

2013-05-01

Recent research has highlighted the adaptive function of memory by showing that imagining being stranded in the grasslands without any survival material and rating words according to their survival value in this situation leads to exceptionally good memory for these words. Studies examining the role of emotions in causing the survival-processing memory advantage have been inconclusive, but some studies have suggested that the effect might be due to negativity or mortality salience. In Experiments 1 and 2, we compared the survival scenario to a control scenario that implied imagining a hopeless situation (floating in outer space with dwindling oxygen supplies) in which only suicide can avoid the agony of choking to death. Although this scenario was perceived as being more negative than the survival scenario, the survival-processing memory advantage persisted. In Experiment 3, thinking about the relevance of words for survival led to better memory for these words than did thinking about the relevance of words for death. This survival advantage was found for concrete, but not for abstract, words. The latter finding is consistent with the assumption that the survival instructions encourage participants to think about many different potential uses of items to aid survival, which may be a particularly efficient form of elaborate encoding. Together, the results suggest that thinking about death is much less effective in promoting recall than is thinking about survival. Therefore, the survival-processing memory advantage cannot be satisfactorily explained by negativity or mortality salience.

Subthalamic nucleus deep brain stimulation affects distractor interference in auditory working memory.

Science.gov (United States)

Camalier, Corrie R; Wang, Alice Y; McIntosh, Lindsey G; Park, Sohee; Neimat, Joseph S

2017-03-01

Computational and theoretical accounts hypothesize the basal ganglia play a supramodal "gating" role in the maintenance of working memory representations, especially in preservation from distractor interference. There are currently two major limitations to this account. The first is that supporting experiments have focused exclusively on the visuospatial domain, leaving questions as to whether such "gating" is domain-specific. The second is that current evidence relies on correlational measures, as it is extremely difficult to causally and reversibly manipulate subcortical structures in humans. To address these shortcomings, we examined non-spatial, auditory working memory performance during reversible modulation of the basal ganglia, an approach afforded by deep brain stimulation of the subthalamic nucleus. We found that subthalamic nucleus stimulation impaired auditory working memory performance, specifically in the group tested in the presence of distractors, even though the distractors were predictable and completely irrelevant to the encoding of the task stimuli. This study provides key causal evidence that the basal ganglia act as a supramodal filter in working memory processes, further adding to our growing understanding of their role in cognition. Copyright © 2017 Elsevier Ltd. All rights reserved.

Towards Interactive Steering of a Very Large Floating Structure Code by Using HPC Parallelisation Strategies

KAUST Repository

Frisch, Jerome; Gao, Ruiping; Mundani, Ralf-Peter; Wang, Chien Ming; Rank, Ernst

2012-01-01

Very large floating structures (VLFSs) have been used for broad applications such as floating storage facilities, floating piers, floating bridges, floating airports, entertainment facilities, even habitation, and other purposes. Owing to its small

[Treatment of Persistent Somatoform Pain Disorder by Floating Needle Therapy and Duloxetine].

Science.gov (United States)

Ren, Wan-wen; Zhou, Zhi-ying; Xu, Mi-mi; Long, Sen; Tang, Guang-zheng; Mao, Hong-jing; Chen, Shu-lin

2016-02-01

To evaluate clinical effect and safety of floating needle therapy and duloxetine in treating patients with persistent somatoform pain disorder (PSPD). Totally 108 PSPD patients were randomly assigned to the floating needle treatment group, the duloxetine treatment group, and the placebo treatment group, 36 in each group. Patients in the floating needle treatment group received floating needle therapy and placebo. Those in the duloxetine treatment group received duloxetine and simulated floating needle therapy. Those in the placebo treatment group received the placebo and simulated floating needle therapy. All treatment lasted for six weeks. Efficacy and adverse reactions were evaluated using Simple McGill pain scale (SF-MPQ) and Treatment Emergent Symptom Scale (TESS) before treatment and immediately after treatment, as well as at the end of 1st, 2nd, 4th, and 6th week of treatment, respectively. Hamilton Depression Scale (HAMD, 17 items), Hamilton Anxiety Scale (HAMA) were assessed before treatment and at the end of 1st, 2nd, 4th, and 6th week of treatment, respectively. Patients in the floating needle treatment group and the duloxetine treatment group with the total reducing score rate of SF-MPQ in Pain Rating index (PRI) ≥ 50% after 6 weeks' treatment were involved in the follow-up study. (1) Compared with the same group before treatment, SF-MPQ score, HAMD score and HAMA total scores all decreased in all the three groups at the end of 1st, 2nd, 4th, and 6th week of treatment (P floating needle treatment group (P floating needle treatment group significantly decreased after 1, 2, 4, and 6 weeks of treatment (P floating needle treatment group, 17 (50.0%) in the duloxetine treatment group, and 7 (21.2%) in the placebo treatment group. Compared with the placebo treatment group, the incidence of adverse reaction increased in the duloxetine treatment group (χ² = 6.04, P floating needle treatment group (χ² = 14.9, P floating needle treatment group and 17

Development and Characterization of Novel Floating-Mucoadhesive Tablets Bearing Venlafaxine Hydrochloride

Directory of Open Access Journals (Sweden)

Raghvendra Misra

2016-01-01

Full Text Available The present investigation is concerned about the development of floating bioadhesive drug delivery system of venlafaxine hydrochloride which after oral administration exhibits a unique combination of floating and bioadhesion to prolong gastric residence time and increase drug bioavailability within the stomach. The floating bioadhesive tablets were prepared by the wet granulation method using different ratios of hydroxypropyl methyl cellulose (HPMC K4MCR and Carbopol 934PNF as polymers. Sodium bicarbonate (NaHCO3 and citric acid were used as gas (CO2 generating agents. Tablets were characterized for floating properties, in vitro drug release, detachment force, and swelling index. The concentration of hydroxypropyl methyl cellulose and Carbopol 934PNF significantly affects the in vitro drug release, floating properties, detachment force, and swelling properties of the tablets. The optimized formulation showed the floating lag time 72±2.49 seconds and duration of floating 24.50±0.74 hr. The in vitro release studies and floating behavior were studied in simulated gastric fluid (SGF at pH 1.2. Different drug release kinetics models were also applied. The in vitro drug release from tablets was sufficiently sustained (more than 18 hr and the Fickian transports of the drug from the tablets were confirmed. The radiological evidence suggests that the tablets remained buoyant and altered position in the stomach of albino rabbit and mean gastric residence time was prolonged (more than > 6 hr.

Formulation, release characteristics, and bioavailability study of gastroretentive floating matrix tablet and floating raft system of Mebeverine HCl.

Science.gov (United States)

El Nabarawi, Mohamed A; Teaima, Mahmoud H; Abd El-Monem, Rehab A; El Nabarawy, Nagla A; Gaber, Dalia A

2017-01-01

To prolong the residence time of dosage forms within the gastrointestinal tract until all drug is released at the desired rate is one of the real challenges for oral controlled-release drug delivery systems. This study was designed to develop a controlled-release floating matrix tablet and floating raft system of Mebeverine HCl (MbH) and evaluate different excipients for their floating behavior and in vitro controlled-release profiles. Oral pharmacokinetics of the optimum matrix tablet, raft system formula, and marketed Duspatalin ® 200 mg retard as reference were studied in beagle dogs. The optimized tablet formula (FT-10) and raft system formula (FRS-11) were found to float within 34±5 sec and 15±7 sec, respectively, and both remain buoyant over a period of 12 h in simulated gastric fluid. FT-10 (Compritol/HPMC K100M 1:1) showed the slowest drug release among all prepared tablet formulations, releasing about 80.2% of MbH over 8 h. In contrast, FRS-11 (Sodium alginate 3%/HPMC K100M 1%/Precirol 2%) had the greatest retardation, providing sustained release of 82.1% within 8 h. Compared with the marketed MbH product, the C max of FT-10 was almost the same, while FRS-11 maximum concentration was higher. The t max was 3.33, 2.167, and 3.0 h for marketed MbH product, FT-10, and FRS-11, respectively. In addition, the oral bioavailability experiment showed that the relative bioavailability of the MbH was 104.76 and 116.01% after oral administration of FT-10 and FRS-11, respectively, compared to marketed product. These results demonstrated that both controlled-released floating matrix tablet and raft system would be promising gastroretentive delivery systems for prolonging drug action.

Floating cultivation of marine cyanobacteria using coal fly ash

Energy Technology Data Exchange (ETDEWEB)

Matsumoto, M.; Yoshida, E.; Takeyama, H.; Matsunaga, T. [Tokyo University of Agriculture and Technology, Tokyo (Japan). Dept. of Biotetechnology

2000-07-01

The aim was to develop improved methodologies for bulk culturing of biotechnologically useful marine cyanobacteria in the open ocean. The viability of using coal fly ash (CFA) blocks as the support medium in a novel floating culture system for marine microalgae was investigated. The marine cyanobacterium Synechococcus sp. NKBC 040607 was found to adhere to floating CFA blocks in liquid culture medium. The marine cyanobacterium Synechococcus sp. NKBG 042902 weakly adhered to floating CFA blocks in BG-11 medium. Increasing the concentration of calcium ion in the culture medium enhanced adherence to CFA blocks.

Free-Floating Iris Cyst in a Patient with Recurrent Iritis

Directory of Open Access Journals (Sweden)

Joanne M.Y. Teong

2015-06-01

Full Text Available Purpose: We describe an unusual clinical finding of a free-floating iris cyst in a patient with recurrent iritis. Method: The clinical finding of a free-floating iris cyst was recorded using slit-lamp photography. Results: A 39-year-old male with a 5-year history of recurrent right iritis was found to have a small mobile iris cyst within his right anterior chamber, first identified 3 years ago. The patient did not experience any discomfort or visual symptoms resulting from the cyst. Conclusion: Surgical removal is not indicated for asymptomatic non-progressive free-floating iris cysts. The significance of a free-floating iris cyst in the setting of recurrent iritis remains unknown.

Impact of associated injuries in the Floating knee: A retrospective study

Science.gov (United States)

Rethnam, Ulfin; Yesupalan, Rajam S; Nair, Rajagopalan

2009-01-01

Background Floating knee injuries are usually associated with other significant injuries. Do these injuries have implications on the management of the floating knee and the final outcome of patients? Our study aims to assess the implications of associated injuries in the management and final outcome of floating knee. Methods 29 patients with floating knees were assessed in our institution. A retrospective analysis of medical records and radiographs were done and all associated injuries were identified. The impact of associated injuries on delay in initial surgical management, delay in rehabilitation & final outcome of the floating knee were assessed. Results 38 associated injuries were noted. 7 were associated with ipsilateral knee injuries. Lower limb injuries were most commonly associated with the floating knee. Patients with some associated injuries had a delay in surgical management and others a delay in post-operative rehabilitation. Knee ligament and vascular injuries were associated with poor outcome. Conclusion The associated injuries were quite frequent with the floating knee. Some of the associated injuries caused a delay in surgical management and post-operative rehabilitation. In assessment of the final outcome, patients with associated knee and vascular injuries had a poor prognosis. Majority of the patients with associated injuries had a good or excellent outcome. PMID:19144197

Floating Collection in an Academic Library: An Audacious Experiment That Succeeded

Science.gov (United States)

Coopey, Barbara; Eshbach, Barbara; Notartomas, Trish

2016-01-01

Can a floating collection thrive in a large multicampus academic research library? Floating collections have been successful in public libraries for some time, but it is uncommon for academic libraries and unheard of for a large academic library system. This article will discuss the investigation into the feasibility of a floating collection at…

The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET.

Science.gov (United States)

Li, Wei; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Wang, Qianqiong

2017-09-06

The larger volume of capacitor and higher leakage current of transistor have become the inherent disadvantages for the traditional one transistor (1T)-one capacitor (1C) dynamic random access memory (DRAM). Recently, the tunneling FET (TFET) is applied in DRAM cell due to the low off-state current and high switching ratio. The dual-gate TFET (DG-TFET) DRAM cell with the capacitorless structure has the superior performance-higher retention time (RT) and weak temperature dependence. But the performance of TFET DRAM cell is sensitive to programming condition. In this paper, the guideline of programming optimization is discussed in detail by using simulation tool-Silvaco Atlas. Both the writing and reading operations of DG-TFET DRAM depend on the band-to-band tunneling (BTBT). During the writing operation, the holes coming from BTBT governed by Gate2 are stored in potential well under Gate2. A small negative voltage is applied at Gate2 to retain holes for a long time during holding "1". The BTBT governed by Gate1 mainly influences the reading current. Using the optimized programming condition, the DG-TFET DRAM obtains the higher current ratio of reading "1" to reading "0" (10 7 ) and RT of more than 2 s. The higher RT reduces the refresh rate and dynamic power consumption of DRAM.

The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET

Science.gov (United States)

Li, Wei; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Wang, Qianqiong

2017-09-01

The larger volume of capacitor and higher leakage current of transistor have become the inherent disadvantages for the traditional one transistor (1T)-one capacitor (1C) dynamic random access memory (DRAM). Recently, the tunneling FET (TFET) is applied in DRAM cell due to the low off-state current and high switching ratio. The dual-gate TFET (DG-TFET) DRAM cell with the capacitorless structure has the superior performance-higher retention time (RT) and weak temperature dependence. But the performance of TFET DRAM cell is sensitive to programming condition. In this paper, the guideline of programming optimization is discussed in detail by using simulation tool—Silvaco Atlas. Both the writing and reading operations of DG-TFET DRAM depend on the band-to-band tunneling (BTBT). During the writing operation, the holes coming from BTBT governed by Gate2 are stored in potential well under Gate2. A small negative voltage is applied at Gate2 to retain holes for a long time during holding "1". The BTBT governed by Gate1 mainly influences the reading current. Using the optimized programming condition, the DG-TFET DRAM obtains the higher current ratio of reading "1" to reading "0" (107) and RT of more than 2 s. The higher RT reduces the refresh rate and dynamic power consumption of DRAM.

MOSFET Electric-Charge Sensor

Science.gov (United States)

Robinson, Paul A., Jr.

1988-01-01

Charged-particle probe compact and consumes little power. Proposed modification enables metal oxide/semiconductor field-effect transistor (MOSFET) to act as detector of static electric charges or energetic charged particles. Thickened gate insulation acts as control structure. During measurements metal gate allowed to "float" to potential of charge accumulated in insulation. Stack of modified MOSFET'S constitutes detector of energetic charged particles. Each gate "floats" to potential induced by charged-particle beam penetrating its layer.

Measuring the Coefficient of Friction of a Small Floating Liquid Marble.

Science.gov (United States)

Ooi, Chin Hong; Nguyen, Anh Van; Evans, Geoffrey M; Dao, Dzung Viet; Nguyen, Nam-Trung

2016-12-02

This paper investigates the friction coefficient of a moving liquid marble, a small liquid droplet coated with hydrophobic powder and floating on another liquid surface. A floating marble can easily move across water surface due to the low friction, allowing for the transport of aqueous solutions with minimal energy input. However, the motion of a floating marble has yet to be systematically characterised due to the lack of insight into key parameters such as the coefficient of friction between the floating marble and the carrier liquid. We measured the coefficient of friction of a small floating marble using a novel experimental setup that exploits the non-wetting properties of a liquid marble. A floating liquid marble pair containing a minute amount magnetite particles were immobilised and then released in a controlled manner using permanent magnets. The capillarity-driven motion was analysed to determine the coefficient of friction of the liquid marbles. The "capillary charge" model was used to fit the experimental results. We varied the marble content and carrier liquid to establish a relationship between the friction correction factor and the meniscus angle.

The floating knee: epidemiology, prognostic indicators & outcome following surgical management

OpenAIRE

Yesupalan Rajam S; Rethnam Ulfin; Nair Rajagopalan

2007-01-01

Abstract Background Floating Knee injuries are complex injuries. The type of fractures, soft tissue and associated injuries make this a challenging problem to manage. We present the outcome of these injuries after surgical management. Methods 29 patients with floating knee injuries were managed over a 3 year period. This was a prospective study were both fractures of the floating knee injury were surgically fixed using different modalities. The associated injuries were managed appropriately. ...

Memristors: Memory elements in potato tubers.

Science.gov (United States)

Volkov, Alexander G; Nyasani, Eunice K; Blockmon, Avery L; Volkova, Maya I

2015-01-01

A memristor is a nonlinear element because its current-voltage characteristic is similar to that of a Lissajous pattern for nonlinear systems. This element was postulated recently and researchers are looking for it in different biosystems. We investigated electrical circuitry of red Irish potato tubers (Solanum tuberosum L.). The goal was to discover if potato tubers might have a new electrical component - a resistor with memory. The analysis was based on a cyclic current-voltage characteristic where the resistor with memory should manifest itself. We found that the electrostimulation by bipolar sinusoidal or triangle periodic waves induces electrical responses in the potato tubers with fingerprints of memristors. Tetraethylammonium chloride, an inhibitor of voltage gated K(+) channels, transforms a memristor to a resistor in potato tubers. Our results demonstrate that a voltage gated K(+) channel in the excitable tissue of potato tubers has properties of a memristor. Uncoupler carbonylcyanide-4-trifluoromethoxy-phenyl hydrazone decreases the amplitude of electrical responses at low and high frequencies of bipolar periodic sinusoidal or triangle electrostimulating waves. The discovery of memristors in plants creates a new direction in the understanding of electrical phenomena in plants.

Gate current for p+-poly PMOS devices under gate injection conditions

NARCIS (Netherlands)

Hof, A.J.; Holleman, J.; Woerlee, P.H.

2001-01-01

In current CMOS processing both n+-poly and p+-poly gates are used. The I-V –relationship and reliability of n+-poly devices are widely studied and well understood. Gate currents and reliability for p+-poly PMOS devices under gate injection conditions are not well understood. In this paper, the

Radiation-Tolerant Intelligent Memory Stack - RTIMS

Science.gov (United States)

Ng, Tak-kwong; Herath, Jeffrey A.

2011-01-01

This innovation provides reconfigurable circuitry and 2-Gb of error-corrected or 1-Gb of triple-redundant digital memory in a small package. RTIMS uses circuit stacking of heterogeneous components and radiation shielding technologies. A reprogrammable field-programmable gate array (FPGA), six synchronous dynamic random access memories, linear regulator, and the radiation mitigation circuits are stacked into a module of 42.7 42.7 13 mm. Triple module redundancy, current limiting, configuration scrubbing, and single- event function interrupt detection are employed to mitigate radiation effects. The novel self-scrubbing and single event functional interrupt (SEFI) detection allows a relatively soft FPGA to become radiation tolerant without external scrubbing and monitoring hardware

Ultrathin HfON/SiO2 dual tunneling layer for improving the electrical properties of metal–oxide–nitride–oxide–silicon memory

International Nuclear Information System (INIS)

Liu, L.; Xu, J.P.; Chen, J.X.; Ji, F.; Huang, X.D.; Lai, P.T.

2012-01-01

A high-k gate stack structure with ultrathin HfON/SiO 2 as dual tunneling layer (DTL), AlN as charge storage layer (CSL) and HfAlO as blocking layer (BL) is proposed to make a charge-trapping-type metal–oxide–nitride–oxide–silicon non-volatile memory device by employing in-situ sputtering method. The validity of the structure is examined and confirmed by transmission electron microscopy. The memory window, program/erase, endurance and retention properties are investigated and compared with similar gate stack structure with Si 3 N 4 /SiO 2 as DTL, HfO 2 as CSL and Al 2 O 3 as BL. Results show that a large memory window of 3.55 V at a program/erase (P/E) voltage of + 8 V/− 15 V, high P/E speed, and good endurance and retention characteristic can be achieved using the Au/ HfAlO/AlN/(HfON/SiO 2 )/Si gate stack structure. The main mechanisms lie in the enhanced electron injection through the ultrathin high-k HfON/SiO 2 DTL with suitable band offset, high trapping efficiency of the high-k AlN material, and effective blocking role of the high-k HfAlO BL. - Highlights: ► An Au/HfAlO/AlN/(HfON/SiO 2 )/Si high-k gate stack structure is proposed. ► A band-engineered dual tunneling layer (HfON/SiO 2 ) is proposed and prepared. ► A good trade-off among the memory characteristics is obtained. ► In-situ sputtering method is employed to fabricate the gate stack structure.

Multiple Independent Gate FETs: How Many Gates Do We Need?

OpenAIRE

Amarù, Luca; Hills, Gage; Gaillardon, Pierre-Emmanuel; Mitra, Subhasish; De Micheli, Giovanni

2015-01-01

Multiple Independent Gate Field Effect Transistors (MIGFETs) are expected to push FET technology further into the semiconductor roadmap. In a MIGFET, supplementary gates either provide (i) enhanced conduction properties or (ii) more intelligent switching functions. In general, each additional gate also introduces a side implementation cost. To enable more efficient digital systems, MIGFETs must leverage their expressive power to realize complex logic circuits with few physical resources. Rese...

Transparently wrap-gated semiconductor nanowire arrays for studies of gate-controlled photoluminescence

Energy Technology Data Exchange (ETDEWEB)

Nylund, Gustav; Storm, Kristian; Torstensson, Henrik; Wallentin, Jesper; Borgström, Magnus T.; Hessman, Dan; Samuelson, Lars [Solid State Physics, Nanometer Structure Consortium, Lund University, Box 118, S-221 00 Lund (Sweden)

2013-12-04

We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.

High voltage switches having one or more floating conductor layers

Science.gov (United States)

Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

2015-11-24

This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of one or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.

Fear of Floating: Exchange Rate Flexibility Indices

OpenAIRE

Reinhart, Carmen

2001-01-01

Many emerging market countries have suffered financial crises. One view blames soft pegs for these crises. Adherents to that view suggest that countries move to corner solutions--hard pegs or floating exchange rates. We analyze the behavior of exchange rates, reserves, and interest rates to assess whether there is evidence that country practice is moving toward corner solutions. We focus on whether countries that claim they are floating are indeed doing so. We find that countries that say th...

Dynamic Response of a Floating Bridge Structure

OpenAIRE

Viuff, Thomas; Leira, Bernt Johan; Øiseth, Ole; Xiang, Xu

2016-01-01

A theoretical overview of the stochastic dynamic analysis of a floating bridge structure is presented. Emphasis is on the wave-induced response and the waves on the sea surface are idealized as a zero mean stationary Gaussian process. The first-order wave load processes are derived using linear potential theory and the structural idealization is based on the Finite Element Method. A frequency response calculation is presented for a simplified floating bridge structure example emphasising the ...

Development and evaluation of floating microspheres of curcumin in ...

African Journals Online (AJOL)

Purpose: To prepare and evaluate floating microspheres of curcumin for prolonged gastric residence and to study their effect on alloxan-induced diabetic rats. Methods: Floating microsphere were prepared by emulsion-solvent diffusion method, using hydroxylpropyl methylcellulose, chitosan and Eudragit S 100 polymer in ...

Economic Floating Waste Detectionfor Surface Cleaning Robots

Directory of Open Access Journals (Sweden)

Sumroengrit Jakkrit

2017-01-01

Full Text Available Removing waste out of water surface is a routine task and can be operated by using autonomous surface cleaning robots. This paper presents amethodoflaser-based floating waste detection for surface robot guidance when waste positions are unknown beforehand. Basing on concept of refraction and reflection of laser ray, the proposed laser-based technique is proven to be applicable on floating waste detection. The economic waste detector is constructed and mounted on the robot. Five DOF equations of motion are formulated for calculation of waste position incorporating distance measured by the laser and also the robot motion caused by external wind force as well as water surface tension. Experiments were conducted on a pond with calm water and results show that the presented economic waste detection successfully identify and locate position of plastic bottles floating on water surface within the range of 5 meters.

Compound floating pivot micromechanisms

Science.gov (United States)

Garcia, Ernest J.

2001-04-24

A new class of tilting micromechanical mechanisms have been developed. These new mechanisms use compound floating pivot structures to attain far greater tilt angles than are practical using other micromechanical techniques. The new mechanisms are also capable of bi-directional tilt about multiple axes.

Formulation and evaluation of glipizide floating-bioadhesive tablets

Directory of Open Access Journals (Sweden)

Jayvadan K. Patel

2010-10-01

Full Text Available The purpose of this study was formulation and in vitro evaluation of floating-bioadhesive tablets to lengthen the stay of glipizide in its absorption area. Effervescent tablets were made using chitosan (CH, hydroxypropyl methylcellulose (HPMC, carbopolP934 (CP, polymethacrylic acid (PMA, citric acid, and sodium bicarbonate. Tablets with 5% effervescent base had longer lag time than 10%. The type of polymer had no significant effect on the floating lag time. All tablets floated atop the medium for 23-24 hr. Increasing carbopolP934 caused higher bioadhesion than chitosan (p < 0.05. All formulations showed a Higuchi, non-Fickian release mechanism. Tablets with 10% effervescent base, 80% CH/20% HPMC, or 80% CP/20% PMA seemed desirable.

Top-gate pentacene-based organic field-effect transistor with amorphous rubrene gate insulator

Science.gov (United States)

Hiroki, Mizuha; Maeda, Yasutaka; Ohmi, Shun-ichiro

2018-02-01

The scaling of organic field-effect transistors (OFETs) is necessary for high-density integration and for this, OFETs with a top-gate configuration are required. There have been several reports of damageless lithography processes for organic semiconductor or insulator layers. However, it is still difficult to fabricate scaled OFETs with a top-gate configuration. In this study, the lift-off process and the device characteristics of the OFETs with a top-gate configuration utilizing an amorphous (α) rubrene gate insulator were investigated. We have confirmed that α-rubrene shows an insulating property, and its extracted linear mobility was 2.5 × 10-2 cm2/(V·s). The gate length and width were 10 and 60 µm, respectively. From these results, the OFET with a top-gate configuration utilizing an α-rubrene gate insulator is promising for the high-density integration of scaled OFETs.

Experimental investigation of localized stress-induced leakage current distribution in gate dielectrics using array test circuit

Science.gov (United States)

Park, Hyeonwoo; Teramoto, Akinobu; Kuroda, Rihito; Suwa, Tomoyuki; Sugawa, Shigetoshi

2018-04-01

Localized stress-induced leakage current (SILC) has become a major problem in the reliability of flash memories. To reduce it, clarifying the SILC mechanism is important, and statistical measurement and analysis have to be carried out. In this study, we applied an array test circuit that can measure the SILC distribution of more than 80,000 nMOSFETs with various gate areas at a high speed (within 80 s) and a high accuracy (on the 10-17 A current order). The results clarified that the distributions of localized SILC in different gate areas follow a universal distribution assuming the same SILC defect density distribution per unit area, and the current of localized SILC defects does not scale down with the gate area. Moreover, the distribution of SILC defect density and its dependence on the oxide field for measurement (E OX-Measure) were experimentally determined for fabricated devices.

Floating Solar Photovoltaics Gaining Ground | State, Local, and Tribal

Science.gov (United States)

flotovoltaics (a trademarked term) or floating solar, represent an emerging application in which PV panels are , including efficiency gains (due to water cooling the panels), reductions in unwanted algae growth, slower 994 panels floating on 130 foam-filled pontoons atop the winery's irrigation pond and an additional

Radiation characterization of a C256 EEPROM

International Nuclear Information System (INIS)

Wrobel, T.F.

1989-01-01

Total dose, dose-rate and high dose-rate memory retention results are presented for the SEEQ Technologies Inc., 28C256 floating gate electrically erasable programmable read only memory (EEPROM). Total dose failure levels are mode dependent, i.e. ∼33 krad(Si) for reading and ∼9.5 krad(Si) for writing. The write-mode failure level is dose-rated dependent, increasing from ∼10 krad(Si) at ∼11 rad(Si)/s to ∼ 28 krad(Si) at dose rates ∼0,1 rad(Si)/s Average upset and latch-up thresholds are 3.8 x 10 8 rad(Si)/s and 7.7 x 10 8 rad(Si)/s respectively. No latch-up windows were observed. Memory contents were retained following exposure up to 108 krad (Si) and following 1 x 10 12 rad(Si)/s

Analytical drain current formulation for gate dielectric engineered dual material gate-gate all around-tunneling field effect transistor

Science.gov (United States)

Madan, Jaya; Gupta, R. S.; Chaujar, Rishu

2015-09-01

In this work, an analytical drain current model for gate dielectric engineered (hetero dielectric)-dual material gate-gate all around tunnel field effect transistor (HD-DMG-GAA-TFET) has been developed. Parabolic approximation has been used to solve the two-dimensional (2D) Poisson equation with appropriate boundary conditions and continuity equations to evaluate analytical expressions for surface potential, electric field, tunneling barrier width and drain current. Further, the analog performance of the device is studied for three high-k dielectrics (Si3N4, HfO2, and ZrO2), and it has been investigated that the problem of lower ION, can be overcome by using the hetero-gate architecture. Moreover, the impact of scaling the gate oxide thickness and bias variations has also been studied. The HD-DMG-GAA-TFET shows an enhanced ION of the order of 10-4 A. The effectiveness of the proposed model is validated by comparing it with ATLAS device simulations.

Multi-span Suspension Bridge with Floating Towers

OpenAIRE

Brunstad, Orjan

2013-01-01

The Norwegian Public Roads Administration (NPRA) is currently conducting a feasible study of crossing 8 fjords on the west coast of Norway. The most challenging crossing is the 3700 m wide Sognefjord. Three main concepts are under development, and one of the concepts of this crossing is a three span suspension bridge on floating towers. The floating foundation suggested is a multi-column pontoon with mooring lines to seabed. The object of this thesis was to study this bridge concept with resp...

Current-Sensitive Path Planning for an Underactuated Free-Floating Ocean Sensorweb

Science.gov (United States)

Dahl, Kristen P.; Thompson, David R.; McLaren, David; Chao, Yi; Chien, Steve

2011-01-01

This work investigates multi-agent path planning in strong, dynamic currents using thousands of highly under-actuated vehicles. We address the specific task of path planning for a global network of ocean-observing floats. These submersibles are typified by the Argo global network consisting of over 3000 sensor platforms. They can control their buoyancy to float at depth for data collection or rise to the surface for satellite communications. Currently, floats drift at a constant depth regardless of the local currents. However, accurate current forecasts have become available which present the possibility of intentionally controlling floats' motion by dynamically commanding them to linger at different depths. This project explores the use of these current predictions to direct float networks to some desired final formation or position. It presents multiple algorithms for such path optimization and demonstrates their advantage over the standard approach of constant-depth drifting.

Synaptic behaviors of thin-film transistor with a Pt/HfO x /n-type indium–gallium–zinc oxide gate stack

Science.gov (United States)

Yang, Paul; Park, Daehoon; Beom, Keonwon; Kim, Hyung Jun; Kang, Chi Jung; Yoon, Tae-Sik

2018-07-01

We report a variety of synaptic behaviors in a thin-film transistor (TFT) with a metal-oxide-semiconductor gate stack that has a Pt/HfO x /n-type indium–gallium–zinc oxide (n-IGZO) structure. The three-terminal synaptic TFT exhibits a tunable synaptic weight with a drain current modulation upon repeated application of gate and drain voltages. The synaptic weight modulation is analog, voltage-polarity dependent reversible, and strong with a dynamic range of multiple orders of magnitude (>104). This modulation process emulates biological synaptic potentiation, depression, excitatory-postsynaptic current, paired-pulse facilitation, and short-term to long-term memory transition behaviors as a result of repeated pulsing with respect to the pulse amplitude, width, repetition number, and the interval between pulses. These synaptic behaviors are interpreted based on the changes in the capacitance of the Pt/HfO x /n-IGZO gate stack, the channel mobility, and the threshold voltage that result from the redistribution of oxygen ions by the applied gate voltage. These results demonstrate the potential of this structure for three-terminal synaptic transistor using the gate stack composed of the HfO x gate insulator and the IGZO channel layer.

Synaptic behaviors of thin-film transistor with a Pt/HfO x /n-type indium-gallium-zinc oxide gate stack.

Science.gov (United States)

Yang, Paul; Park, Daehoon; Beom, Keonwon; Kim, Hyung Jun; Kang, Chi Jung; Yoon, Tae-Sik

2018-07-20

We report a variety of synaptic behaviors in a thin-film transistor (TFT) with a metal-oxide-semiconductor gate stack that has a Pt/HfO x /n-type indium-gallium-zinc oxide (n-IGZO) structure. The three-terminal synaptic TFT exhibits a tunable synaptic weight with a drain current modulation upon repeated application of gate and drain voltages. The synaptic weight modulation is analog, voltage-polarity dependent reversible, and strong with a dynamic range of multiple orders of magnitude (>10 4 ). This modulation process emulates biological synaptic potentiation, depression, excitatory-postsynaptic current, paired-pulse facilitation, and short-term to long-term memory transition behaviors as a result of repeated pulsing with respect to the pulse amplitude, width, repetition number, and the interval between pulses. These synaptic behaviors are interpreted based on the changes in the capacitance of the Pt/HfO x /n-IGZO gate stack, the channel mobility, and the threshold voltage that result from the redistribution of oxygen ions by the applied gate voltage. These results demonstrate the potential of this structure for three-terminal synaptic transistor using the gate stack composed of the HfO x gate insulator and the IGZO channel layer.

Hywind floating wind turbine project

Energy Technology Data Exchange (ETDEWEB)

Crome, Tim

2010-07-01

The Hywind floating wind turbine concept was developed by StatoilHydro. Technip was awarded the contract for engineering, fabrication and installation of a demonstration unit in May 2008 and the completed wind turbine was installed mid June 2009 at the west coast of Norway on 220 m water depth. The demonstration unit will generate 2,3 MW and is equipped with instrumentation for monitoring mooring forces, strains and motions. The fabrication of the SPAR type steel substructure was performed at Technip Offshore Finland facilities in Pori and was towed horizontally from Finland to Norway, where it was upended to a vertical position by water filling. The completed floating wind turbine was towed vertically to the final location west of Karmoey and connected to the pre-installed three legged anchor system using an Anchor Handling Tug type vessel. The wind turbine test period is scheduled to start in September 2009. Statoil will monitor the performance of the system for two years before decision will be taken for further development. The paper will present the main challenges and lessons learned through design, fabrication and installation of this first of its kind structure. Main emphasis will be on the special challenges experienced for this floating, catenary moored, slender unit which is highly exposed for wind induced forces in addition to current and waves in hostile North Sea environments. (Author)

Interface engineering and reliability characteristics of hafnium dioxide with poly silicon gate and dual metal (ruthenium-tantalum alloy, ruthenium) gate electrode for beyond 65 nm technology

Science.gov (United States)

Kim, Young-Hee

Chip density and performance improvements have been driven by aggressive scaling of semiconductor devices. In both logic and memory applications, SiO 2 gate dielectrics has reached its physical limit, direct tunneling resulting from scaling down of dielectrics thickness. Therefore high-k dielectrics have attracted a great deal of attention from industries as the replacement of conventional SiO2 gate dielectrics. So far, lots of candidate materials have been evaluated and Hf-based high-k dielectrics were chosen to the promising materials for gate dielectrics. However, lots of issues were identified and more thorough researches were carried out on Hf-based high-k dielectrics. For instances, mobility degradation, charge trapping, crystallization, Fermi level pinning, interface engineering, and reliability studies. In this research, reliability study of HfO2 were explored with poly gate and dual metal (Ru-Ta alloy, Ru) gate electrode as well as interface engineering. Hard breakdown and soft breakdown were compared and Weibull slope of soft breakdown was smaller than that of hard breakdown, which led to a potential high-k scaling issue. Dynamic reliability has been studied and the combination of trapping and detrapping contributed the enhancement of lifetime projection. Polarity dependence was shown that substrate injection might reduce lifetime projection as well as it increased soft breakdown behavior. Interface tunneling mechanism was suggested with dual metal gate technology. Soft breakdown (l st breakdown) was mainly due to one layer breakdown of bi-layer structure. Low weibull slope was in part attributed to low barrier height of HfO 2 compared to interface layer. Interface layer engineering was thoroughly studied in terms of mobility, swing, and short channel effect using deep sub-micron MOSFET devices. In fact, Hf-based high-k dielectrics could be scaled down to below EOT of ˜10A and it successfully achieved the competitive performance goals. However, it is

Extended onshore control of a floating wind turbine with wave disturbance reduction

DEFF Research Database (Denmark)

Christiansen, S.; Knudsen, T.; Bak, Thomas

2014-01-01

Reaching for higher wind resources floating wind turbines are being investigated. Wave induced loads significantly increase for floating wind turbines, and applying conventional onshore control strategies to floating wind turbines has been shown to impose negative damped oscillations in fore......-aft due to the low natural frequency of the floating structure. We suggest a control loop extension of the onshore controller which stabilizes the system and reduces the wave disturbance. The result is improved performance in power fluctuations, blade pitch activity, and platform oscillations...

Cycle accurate and cycle reproducible memory for an FPGA based hardware accelerator

Science.gov (United States)

Asaad, Sameh W.; Kapur, Mohit

2016-03-15

A method, system and computer program product are disclosed for using a Field Programmable Gate Array (FPGA) to simulate operations of a device under test (DUT). The DUT includes a device memory having a number of input ports, and the FPGA is associated with a target memory having a second number of input ports, the second number being less than the first number. In one embodiment, a given set of inputs is applied to the device memory at a frequency Fd and in a defined cycle of time, and the given set of inputs is applied to the target memory at a frequency Ft. Ft is greater than Fd and cycle accuracy is maintained between the device memory and the target memory. In an embodiment, a cycle accurate model of the DUT memory is created by separating the DUT memory interface protocol from the target memory storage array.

Respiratory gating in positron emission tomography: A quantitative comparison of different gating schemes

International Nuclear Information System (INIS)

Dawood, Mohammad; Buether, Florian; Lang, Norbert; Schober, Otmar; Schaefers, Klaus P

2007-01-01

Respiratory gating is used for reducing the effects of breathing motion in a wide range of applications from radiotherapy treatment to diagnostical imaging. Different methods are feasible for respiratory gating. In this study seven gating methods were developed and tested on positron emission tomography (PET) listmode data. The results of seven patient studies were compared quantitatively with respect to motion and noise. (1) Equal and (2) variable time-based gating methods use only the time information of the breathing cycle to define respiratory gates. (3) Equal and (4) variable amplitude-based gating approaches utilize the amplitude of the respiratory signal. (5) Cycle-based amplitude gating is a combination of time and amplitude-based techniques. A baseline correction was applied to methods (3) and (4) resulting in two new approaches: Baseline corrected (6) equal and (7) variable amplitude-based gating. Listmode PET data from seven patients were acquired together with a respiratory signal. Images were reconstructed applying the seven gating methods. Two parameters were used to quantify the results: Motion was measured as the displacement of the heart due to respiration and noise was defined as the standard deviation of pixel intensities in a background region. The amplitude-based approaches (3) and (4) were superior to the time-based methods (1) and (2). The improvement in capturing the motion was more than 30% (up to 130%) in all subjects. The variable time (2) and amplitude (4) methods had a more uniform noise distribution among all respiratory gates compared to equal time (1) and amplitude (3) methods. Baseline correction did not improve the results. Out of seven different respiratory gating approaches, the variable amplitude method (4) captures the respiratory motion best while keeping a constant noise level among all respiratory phases

On Using the Volatile Mem-Capacitive Effect of TiO2 Resistive Random Access Memory to Mimic the Synaptic Forgetting Process

Science.gov (United States)

Sarkar, Biplab; Mills, Steven; Lee, Bongmook; Pitts, W. Shepherd; Misra, Veena; Franzon, Paul D.

2018-02-01

In this work, we report on mimicking the synaptic forgetting process using the volatile mem-capacitive effect of a resistive random access memory (RRAM). TiO2 dielectric, which is known to show volatile memory operations due to migration of inherent oxygen vacancies, was used to achieve the volatile mem-capacitive effect. By placing the volatile RRAM candidate along with SiO2 at the gate of a MOS capacitor, a volatile capacitance change resembling the forgetting nature of a human brain is demonstrated. Furthermore, the memory operation in the MOS capacitor does not require a current flow through the gate dielectric indicating the feasibility of obtaining low power memory operations. Thus, the mem-capacitive effect of volatile RRAM candidates can be attractive to the future neuromorphic systems for implementing the forgetting process of a human brain.

Low-power DRAM-compatible Replacement Gate High-k/Metal Gate Stacks

Science.gov (United States)

Ritzenthaler, R.; Schram, T.; Bury, E.; Spessot, A.; Caillat, C.; Srividya, V.; Sebaai, F.; Mitard, J.; Ragnarsson, L.-Å.; Groeseneken, G.; Horiguchi, N.; Fazan, P.; Thean, A.

2013-06-01

In this work, the possibility of integration of High-k/Metal Gate (HKMG), Replacement Metal Gate (RMG) gate stacks for low power DRAM compatible transistors is studied. First, it is shown that RMG gate stacks used for Logic applications need to be seriously reconsidered, because of the additional anneal(s) needed in a DRAM process. New solutions are therefore developed. A PMOS stack HfO2/TiN with TiN deposited in three times combined with Work Function metal oxidations is demonstrated, featuring a very good Work Function of 4.95 eV. On the other hand, the NMOS side is shown to be a thornier problem to solve: a new solution based on the use of oxidized Ta as a diffusion barrier is proposed, and a HfO2/TiN/TaOX/TiAl/TiN/TiN gate stack featuring an aggressive Work Function of 4.35 eV (allowing a Work Function separation of 600 mV between NMOS and PMOS) is demonstrated. This work paves the way toward the integration of gate-last options for DRAM periphery transistors.

Floating Oil-Spill Containment Device

Science.gov (United States)

Jones, Jack A.

2012-01-01

Previous oil containment booms have an open top that allows natural gas to escape, and have significant oil leakage due to wave action. Also, a subsea pyramid oil trap exists, but cannot move relative to moving oil plumes from deepsea oil leaks. The solution is to have large, moveable oil traps. One version floats on the sea surface and has a flexible tarp cover and a lower weighted skirt to completely entrap the floating oil and natural gas. The device must have at least three sides with boats pulling at each apex, and sonar or other system to track the slowly moving oil plume, so that the boats can properly locate the booms. The oil trap device must also have a means for removal of the oil and the natural gas. A second design version has a flexible pyramid cover that is attached by lines to ballast on the ocean floor. This is similar to fixed, metal pyramid oil capture devices in the Santa Barbara Channel off the coast of California. The ballast lines for the improved design, however, would have winches that can move the pyramid to always be located above the oil and gas plume. A third design is a combination of the first two. It uses a submerged pyramid to trap oil, but has no anchor and uses boats to locate the trap. It has ballast weights located along the bottom of the tarp and/or at the corners of the trap. The improved floating oil-spill containment device has a large floating boom and weighted skirt surrounding the oil and gas entrapment area. The device is triangular (or more than three sides) and has a flexible tarp cover with a raised gas vent area. Boats pull on the apex of the triangles to maintain tension and to allow the device to move to optimum locations to trap oil and gas. The gas is retrieved from a higher buoyant part of the tarp, and oil is retrieved from the floating oil layer contained in the device. These devices can be operated in relatively severe weather, since waves will break over the devices without causing oil leaking. Also, natural

Argo Float Data from the APDRC DAPPER Server, 1995-present

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — The floats are designed to drift at a fixed pressure (usually 1000 dbar) for 10 days. After this period, the floats move to a profiling pressure (usually between...

FLOAT2 WP4: Development of Materials

DEFF Research Database (Denmark)

Esteves, Luis Pedro; Aarup, Bendt

This report refers to complementary material testing to support the design and production of UHPC floaters for installation in the Wave Star Machine under FLOAT2 project. The main objective of WP4 is the characterization of mechanical properties of fiber-reinforced UHPC.......This report refers to complementary material testing to support the design and production of UHPC floaters for installation in the Wave Star Machine under FLOAT2 project. The main objective of WP4 is the characterization of mechanical properties of fiber-reinforced UHPC....

Effects of Electrolyte on Floating Water Bridge

OpenAIRE

Hideo Nishiumi; Fumitaka Honda

2009-01-01

Fuchs found phenomena that when high voltage is applied to deionized water filled in two contacted beakers, a floating water bridge forms spontaneously. In this paper, we examined flow direction of water bridge and what effects the addition of electrolytes such as NaCl, NaOH, and N H 4 C l to the floating water bridge would give. We found that ionization degree reduced the length of water bridge though insoluble electrolyte A l 2 O 3 had no effect on the length of water bridge.

Fast, noise-free memory for photon synchronization at room temperature.

Science.gov (United States)

Finkelstein, Ran; Poem, Eilon; Michel, Ohad; Lahad, Ohr; Firstenberg, Ofer

2018-01-01

Future quantum photonic networks require coherent optical memories for synchronizing quantum sources and gates of probabilistic nature. We demonstrate a fast ladder memory (FLAME) mapping the optical field onto the superposition between electronic orbitals of rubidium vapor. Using a ladder-level system of orbital transitions with nearly degenerate frequencies simultaneously enables high bandwidth, low noise, and long memory lifetime. We store and retrieve 1.7-ns-long pulses, containing 0.5 photons on average, and observe short-time external efficiency of 25%, memory lifetime (1/ e ) of 86 ns, and below 10 -4 added noise photons. Consequently, coupling this memory to a probabilistic source would enhance the on-demand photon generation probability by a factor of 12, the highest number yet reported for a noise-free, room temperature memory. This paves the way toward the controlled production of large quantum states of light from probabilistic photon sources.

Electrical and ferroelectric properties of RF sputtered PZT/SBN on silicon for non-volatile memory applications

Science.gov (United States)

Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

2018-02-01

We report the integration of multilayer ferroelectric film deposited by RF magnetron sputtering and explore the electrical characteristics for its application as the gate of ferroelectric field effect transistor for non-volatile memories. PZT (Pb[Zr0.35Ti0.65]O3) and SBN (SrBi2Nb2O9) ferroelectric materials were selected for the stack fabrication due to their large polarization and fatigue free properties respectively. Electrical characterization has been carried out to obtain memory window, leakage current density, PUND and endurance characteristics. Fabricated multilayer ferroelectric film capacitor structure shows large memory window of 17.73 V and leakage current density of the order 10-6 A cm-2 for the voltage sweep of -30 to +30 V. This multilayer gate stack of PZT/SBN shows promising endurance property with no degradation in the remnant polarization for the read/write iteration cycles upto 108.

The study to estimate the floating population in Seoul, Korea.

Science.gov (United States)

Lee, Geon Woo; Lee, Yong Jin; Kim, Youngeun; Hong, Seung-Han; Kim, Soohwaun; Kim, Jeong Soo; Lee, Jong Tae; Shin, Dong Chun; Lim, Youngwook

2017-01-01

Traffic-related pollutants have been reported to increase the morbidity of respiratory diseases. In order to apply management policies related to motor vehicles, studies of the floating population living in cities are important. The rate of metro rail transit system use by passengers residing in Seoul is about 54% of total public transportation use. Through the rate of metro use, the people-flow ratios in each administrative area were calculated. By applying a people-flow ratio based on the official census count, the floating population in 25 regions was calculated. The reduced level of deaths among the floating population in 14 regions having the roadside monitoring station was calculated as assuming a 20% reduction of mobile emission based on the policy. The hourly floating population size was calculated by applying the hourly population ratio to the regional population size as specified in the official census count. The number of people moving from 5 a.m. to next day 1 a.m. could not be precisely calculated when the population size was applied, but no issue was observed that would trigger a sizable shift in the rate of population change. The three patterns of increase, decrease, and no change of population in work hours were analyzed. When the concentration of particulate matter less than 10 μm in aerodynamic diameter was reduced by 20%, the number of excess deaths varied according to the difference of the floating population. The effective establishment of directions to manage the pollutants in cities should be carried out by considering the floating population. Although the number of people using the metro system is only an estimate, this disadvantage was supplemented by calculating inflow and outflow ratio of metro users per time in the total floating population in each region. Especially, 54% of metro usage in public transport causes high reliability in application.

The study to estimate the floating population in Seoul, Korea

Directory of Open Access Journals (Sweden)

Geon Woo Lee

2017-05-01

Full Text Available Traffic-related pollutants have been reported to increase the morbidity of respiratory diseases. In order to apply management policies related to motor vehicles, studies of the floating population living in cities are important. The rate of metro rail transit system use by passengers residing in Seoul is about 54% of total public transportation use. Through the rate of metro use, the people-flow ratios in each administrative area were calculated. By applying a people-flow ratio based on the official census count, the floating population in 25 regions was calculated. The reduced level of deaths among the floating population in 14 regions having the roadside monitoring station was calculated as assuming a 20% reduction of mobile emission based on the policy. The hourly floating population size was calculated by applying the hourly population ratio to the regional population size as specified in the official census count. The number of people moving from 5 a.m. to next day 1 a.m. could not be precisely calculated when the population size was applied, but no issue was observed that would trigger a sizable shift in the rate of population change. The three patterns of increase, decrease, and no change of population in work hours were analyzed. When the concentration of particulate matter less than 10 μm in aerodynamic diameter was reduced by 20%, the number of excess deaths varied according to the difference of the floating population. The effective establishment of directions to manage the pollutants in cities should be carried out by considering the floating population. Although the number of people using the metro system is only an estimate, this disadvantage was supplemented by calculating inflow and outflow ratio of metro users per time in the total floating population in each region. Especially, 54% of metro usage in public transport causes high reliability in application.

14 CFR 136.11 - Helicopter floats for over water.

Science.gov (United States)

2010-01-01

... 14 Aeronautics and Space 3 2010-01-01 2010-01-01 false Helicopter floats for over water. 136.11... TOURS AND NATIONAL PARKS AIR TOUR MANAGEMENT National Air Tour Safety Standards § 136.11 Helicopter floats for over water. (a) A helicopter used in commercial air tours over water beyond the shoreline must...

A Method for Modeling of Floating Vertical Axis Wind Turbine

DEFF Research Database (Denmark)

Wang, Kai; Hansen, Martin Otto Laver; Moan, Torgeir

2013-01-01

It is of interest to investigate the potential advantages of floating vertical axis wind turbine (FVAWT) due to its economical installation and maintenance. A novel 5MW vertical axis wind turbine concept with a Darrieus rotor mounted on a semi-submersible support structure is proposed in this paper....... In order to assess the technical and economic feasibility of this novel concept, a comprehensive simulation tool for modeling of the floating vertical axis wind turbine is needed. This work presents the development of a coupled method for modeling of the dynamics of a floating vertical axis wind turbine....... This integrated dynamic model takes into account the wind inflow, aerodynamics, hydrodynamics, structural dynamics (wind turbine, floating platform and the mooring lines) and a generator control. This approach calculates dynamic equilibrium at each time step and takes account of the interaction between the rotor...

The floating water bridge

International Nuclear Information System (INIS)

Fuchs, Elmar C; Woisetschlaeger, Jakob; Gatterer, Karl; Maier, Eugen; Pecnik, Rene; Holler, Gert; Eisenkoelbl, Helmut

2007-01-01

When high voltage is applied to distilled water filled in two glass beakers which are in contact, a stable water connection forms spontaneously, giving the impression of a floating water bridge. A detailed experimental analysis reveals static and dynamic structures as well as heat and mass transfer through this bridge

Nonassociative learning as gated neural integrator and differentiator in stimulus-response pathways

Directory of Open Access Journals (Sweden)

Young Daniel L

2006-08-01

Full Text Available Abstract Nonassociative learning is a basic neuroadaptive behavior exhibited across animal phyla and sensory modalities but its role in brain intelligence is unclear. Current literature on habituation and sensitization, the classic "dual process" of nonassociative learning, gives highly incongruous accounts between varying experimental paradigms. Here we propose a general theory of nonassociative learning featuring four base modes: habituation/primary sensitization in primary stimulus-response pathways, and desensitization/secondary sensitization in secondary stimulus-response pathways. Primary and secondary modes of nonassociative learning are distinguished by corresponding activity-dependent recall, or nonassociative gating, of neurotransmission memory. From the perspective of brain computation, nonassociative learning is a form of integral-differential calculus whereas nonassociative gating is a form of Boolean logic operator – both dynamically transforming the stimulus-response relationship. From the perspective of sensory integration, nonassociative gating provides temporal filtering whereas nonassociative learning affords low-pass, high-pass or band-pass/band-stop frequency filtering – effectively creating an intelligent sensory firewall that screens all stimuli for attention and resultant internal model adaptation and reaction. This unified framework ties together many salient characteristics of nonassociative learning and nonassociative gating and suggests a common kernel that correlates with a wide variety of sensorimotor integration behaviors such as central resetting and self-organization of sensory inputs, fail-safe sensorimotor compensation, integral-differential and gated modulation of sensorimotor feedbacks, alarm reaction, novelty detection and selective attention, as well as a variety of mental and neurological disorders such as sensorimotor instability, attention deficit hyperactivity, sensory defensiveness, autism

Reduction of Used Memory Ensemble Kalman Filtering (RumEnKF): A data assimilation scheme for memory intensive, high performance computing

Science.gov (United States)

Hut, Rolf; Amisigo, Barnabas A.; Steele-Dunne, Susan; van de Giesen, Nick

2015-12-01

Reduction of Used Memory Ensemble Kalman Filtering (RumEnKF) is introduced as a variant on the Ensemble Kalman Filter (EnKF). RumEnKF differs from EnKF in that it does not store the entire ensemble, but rather only saves the first two moments of the ensemble distribution. In this way, the number of ensemble members that can be calculated is less dependent on available memory, and mainly on available computing power (CPU). RumEnKF is developed to make optimal use of current generation super computer architecture, where the number of available floating point operations (flops) increases more rapidly than the available memory and where inter-node communication can quickly become a bottleneck. RumEnKF reduces the used memory compared to the EnKF when the number of ensemble members is greater than half the number of state variables. In this paper, three simple models are used (auto-regressive, low dimensional Lorenz and high dimensional Lorenz) to show that RumEnKF performs similarly to the EnKF. Furthermore, it is also shown that increasing the ensemble size has a similar impact on the estimation error from the three algorithms.

Float level indicator

International Nuclear Information System (INIS)

Grishchuk, M.Kh.; Laptev, A.G.; Pashkov, V.A.

1980-01-01

Specially developed level indicator is suggested with differential to-transformer converter of the float motion, operating in line with a movable electronic block, intended for indicating the level of the dissociating nitrogen tetroxide liquid phase. On the basis of the indicator elements the device is realized to measure the time of calibrated volume fillino. in by liquid nitrogen tetroxide in steady state operation of the experimental bench-marks [ru

Ranitidine Loaded Biopolymer Floats: Designing, Characterization, and Evaluation

Directory of Open Access Journals (Sweden)

Abdul Karim

2017-01-01

Full Text Available The float formulation is a strategy to improve the bioavailability of drugs by gastroretentive drug delivery system (GRDDS. A drug delivery model based on swellable and reswellable low density biopolymers has been designed to evaluate its drug release profile using ranitidine (RNT as a model drug and formulations have been prepared utilizing 32 factorial designs. The drug release (DR data has been subjected to various kinetic models to investigate the DR mechanism. A reduction in rate has been observed by expanding the amounts of PSG and LSG parts, while an expansion has been noted by increasing the concentration of tragacanth (TG and citric acid (CA with an increment in floating time. The stearic acid (SA has been used to decrease the lag time because a decrease in density of system was observed. The kinetic analysis showed that the optimized formulation (S4F3 followed zero-order kinetics and power law was found to be best fitted due to its minimum lag time and maximum floating ability. The resemblance of observed and predicted values indicated the validity of derived equations for evaluating the effect of independent variables while kinetic study demonstrated that the applied models are feasible for evaluating and developing float for RNT.

Methodology to Calculate the Costs of a Floating Offshore Renewable Energy Farm

Directory of Open Access Journals (Sweden)

Laura Castro-Santos

2016-04-01

Full Text Available This paper establishes a general methodology to calculate the life-cycle cost of floating offshore renewable energy devices, applying it to wave energy and wind energy devices. It is accounts for the contributions of the six main phases of their life-cycle: concept definition, design and development, manufacturing, installation, exploitation and dismantling, the costs of which have been defined. Moreover, the energy produced is also taken into account to calculate the Levelized Cost of Energy of a floating offshore renewable energy farm. The methodology proposed has been applied to two renewable energy devices: a floating offshore wave energy device and a floating offshore wind energy device. Two locations have been considered: Aguçadoura and São Pedro de Moel, both in Portugal. Results indicate that the most important cost in terms of the life-cycle of a floating offshore renewable energy farm is the exploitation cost, followed by the manufacturing and the installation cost. In addition, the best area in terms of costs is the same independently of the type of floating offshore renewable energy considered: Aguçadoura. However, the results in terms of Levelized Cost of Energy are different: Aguçadoura is better when considering wave energy technology and the São Pedro de Moel region is the best option when considering floating wind energy technology. The method proposed aims to give a direct approach to calculate the main life-cycle cost of a floating offshore renewable energy farm. It helps to assess its feasibility and evaluating the relevant characteristics that influence it the most.

Floating cultivation of marine cyanobacteria using coal fly ash.

Science.gov (United States)

Matsumoto, M; Yoshida, E; Takeyama, H; Matsunaga, T

2000-01-01

The aim of this study was to develop improved methodologies for bulk culturing of biotechnologically useful marine cyanobacteria in the open ocean. We have investigated the viability of using coal fly ash (CFA) blocks as the support medium in a novel floating culture system for marine micro-algae. The marine cyanobacterium Synechococcus sp. NKBG 040607 was found to adhere to floating CFA blocks in liquid culture medium. Maximum density of attached cells of 2.0 x 10(8) cells/cm2 was achieved using seawater. The marine cyanobacterium Synechococcus sp. NKBG 042902 weakly adhered to floating CFA blocks in BG-11 medium. Increasing the concentration of calcium ion in the culture medium enhanced adherence to CFA blocks.

A Memory-Based Programmable Logic Device Using Look-Up Table Cascade with Synchronous Static Random Access Memories

Science.gov (United States)

Nakamura, Kazuyuki; Sasao, Tsutomu; Matsuura, Munehiro; Tanaka, Katsumasa; Yoshizumi, Kenichi; Nakahara, Hiroki; Iguchi, Yukihiro

2006-04-01

A large-scale memory-technology-based programmable logic device (PLD) using a look-up table (LUT) cascade is developed in the 0.35-μm standard complementary metal oxide semiconductor (CMOS) logic process. Eight 64 K-bit synchronous SRAMs are connected to form an LUT cascade with a few additional circuits. The features of the LUT cascade include: 1) a flexible cascade connection structure, 2) multi phase pseudo asynchronous operations with synchronous static random access memory (SRAM) cores, and 3) LUT-bypass redundancy. This chip operates at 33 MHz in 8-LUT cascades at 122 mW. Benchmark results show that it achieves a comparable performance to field programmable gate array (FPGAs).

Real-Time Spaceborne Synthetic Aperture Radar Float-Point Imaging System Using Optimized Mapping Methodology and a Multi-Node Parallel Accelerating Technique

Science.gov (United States)

Li, Bingyi; Chen, Liang; Yu, Wenyue; Xie, Yizhuang; Bian, Mingming; Zhang, Qingjun; Pang, Long

2018-01-01

With the development of satellite load technology and very large-scale integrated (VLSI) circuit technology, on-board real-time synthetic aperture radar (SAR) imaging systems have facilitated rapid response to disasters. A key goal of the on-board SAR imaging system design is to achieve high real-time processing performance under severe size, weight, and power consumption constraints. This paper presents a multi-node prototype system for real-time SAR imaging processing. We decompose the commonly used chirp scaling (CS) SAR imaging algorithm into two parts according to the computing features. The linearization and logic-memory optimum allocation methods are adopted to realize the nonlinear part in a reconfigurable structure, and the two-part bandwidth balance method is used to realize the linear part. Thus, float-point SAR imaging processing can be integrated into a single Field Programmable Gate Array (FPGA) chip instead of relying on distributed technologies. A single-processing node requires 10.6 s and consumes 17 W to focus on 25-km swath width, 5-m resolution stripmap SAR raw data with a granularity of 16,384 × 16,384. The design methodology of the multi-FPGA parallel accelerating system under the real-time principle is introduced. As a proof of concept, a prototype with four processing nodes and one master node is implemented using a Xilinx xc6vlx315t FPGA. The weight and volume of one single machine are 10 kg and 32 cm × 24 cm × 20 cm, respectively, and the power consumption is under 100 W. The real-time performance of the proposed design is demonstrated on Chinese Gaofen-3 stripmap continuous imaging. PMID:29495637

Correlations in background activity control persistent state stability and allow execution of working memory tasks

Directory of Open Access Journals (Sweden)

Mario eDipoppa

2013-10-01

Full Text Available Working memory (WM is tightly capacity limited, it requires selective information gating, active information maintenance, and rapid active updating. Hence performing a WM task needs rapid and controlled transitions between neural persistent activity and the resting state. We propose that changes in spike-time correlations in neural activity provides a mechanism for the required working memory operations. As a proof of principle, we implement sustained activity and working memory in a recurrently-coupled spiking network with neurons receiving excitatory random background activity where background correlations are induced by a common noise source. We first characterize how the level of background correlations controls the stability of the persistent state. With sufficiently high correlations, the sustained state becomes practically unstable, so it cannot be initiated by a transient stimulus. We exploit this in a working memory model implementing the delay match to sample task by modulating flexibly in time the correlation level at different phases of the task. The modulation sets the network in different working regimes: more prompt to gate in a signal or clear the memory. The findings presented in this manuscript can form the basis for a new paradigm about how correlations are flexibly controlled by the cortical circuits to execute WM operations.

Response estimation for a floating bridge using acceleration output only

NARCIS (Netherlands)

Petersen, Øyvind Wiig; Øiseth, Ole; Nord, Torodd Skjerve; Lourens, E.; Sas, P.; Moens, D.; van de Walle, A.

2016-01-01

The Norwegian Public Roads Administration is reviewing the possibility of using floating bridges as fjord crossings. The dynamic behaviour of very long floating bridges with novel designs are prone to uncertainties. Studying the dynamic behaviour of existing bridges is valuable for understanding

Biogeochemical sensor performance in the SOCCOM profiling float array

Science.gov (United States)

Johnson, Kenneth S.; Plant, Joshua N.; Coletti, Luke J.; Jannasch, Hans W.; Sakamoto, Carole M.; Riser, Stephen C.; Swift, Dana D.; Williams, Nancy L.; Boss, Emmanuel; Haëntjens, Nils; Talley, Lynne D.; Sarmiento, Jorge L.

2017-08-01

The Southern Ocean Carbon and Climate Observations and Modeling (SOCCOM) program has begun deploying a large array of biogeochemical sensors on profiling floats in the Southern Ocean. As of February 2016, 86 floats have been deployed. Here the focus is on 56 floats with quality-controlled and adjusted data that have been in the water at least 6 months. The floats carry oxygen, nitrate, pH, chlorophyll fluorescence, and optical backscatter sensors. The raw data generated by these sensors can suffer from inaccurate initial calibrations and from sensor drift over time. Procedures to correct the data are defined. The initial accuracy of the adjusted concentrations is assessed by comparing the corrected data to laboratory measurements made on samples collected by a hydrographic cast with a rosette sampler at the float deployment station. The long-term accuracy of the corrected data is compared to the GLODAPv2 data set whenever a float made a profile within 20 km of a GLODAPv2 station. Based on these assessments, the fleet average oxygen data are accurate to 1 ± 1%, nitrate to within 0.5 ± 0.5 µmol kg-1, and pH to 0.005 ± 0.007, where the error limit is 1 standard deviation of the fleet data. The bio-optical measurements of chlorophyll fluorescence and optical backscatter are used to estimate chlorophyll a and particulate organic carbon concentration. The particulate organic carbon concentrations inferred from optical backscatter appear accurate to with 35 mg C m-3 or 20%, whichever is larger. Factors affecting the accuracy of the estimated chlorophyll a concentrations are evaluated.Plain Language SummaryThe ocean science community must move toward greater use of autonomous platforms and sensors if we are to extend our knowledge of the effects of climate driven change within the ocean. Essential to this shift in observing strategies is an understanding of the performance that can be obtained from biogeochemical sensors on platforms deployed for years and the

Floating Microparticulate Oral Diltiazem Hydrochloride Delivery ...

African Journals Online (AJOL)

Delivery System for Improved Delivery to Heart ... Conclusion: Microparticulate floating (gastroretentive) oral drug delivery system of diltiazem prepared ..... treatment of cardiac disease. ... hydrochloride-loaded mucoadhesive microspheres.

Histone Deacetylase Inhibition via RGFP966 Releases the Brakes on Sensory Cortical Plasticity and the Specificity of Memory Formation.

Science.gov (United States)

Bieszczad, Kasia M; Bechay, Kiro; Rusche, James R; Jacques, Vincent; Kudugunti, Shashi; Miao, Wenyan; Weinberger, Norman M; McGaugh, James L; Wood, Marcelo A

2015-09-23

Research over the past decade indicates a novel role for epigenetic mechanisms in memory formation. Of particular interest is chromatin modification by histone deacetylases (HDACs), which, in general, negatively regulate transcription. HDAC deletion or inhibition facilitates transcription during memory consolidation and enhances long-lasting forms of synaptic plasticity and long-term memory. A key open question remains: How does blocking HDAC activity lead to memory enhancements? To address this question, we tested whether a normal function of HDACs is to gate information processing during memory formation. We used a class I HDAC inhibitor, RGFP966 (C21H19FN4O), to test the role of HDAC inhibition for information processing in an auditory memory model of learning-induced cortical plasticity. HDAC inhibition may act beyond memory enhancement per se to instead regulate information in ways that lead to encoding more vivid sensory details into memory. Indeed, we found that RGFP966 controls memory induction for acoustic details of sound-to-reward learning. Rats treated with RGFP966 while learning to associate sound with reward had stronger memory and additional information encoded into memory for highly specific features of sounds associated with reward. Moreover, behavioral effects occurred with unusually specific plasticity in primary auditory cortex (A1). Class I HDAC inhibition appears to engage A1 plasticity that enables additional acoustic features to become encoded in memory. Thus, epigenetic mechanisms act to regulate sensory cortical plasticity, which offers an information processing mechanism for gating what and how much is encoded to produce exceptionally persistent and vivid memories. Significance statement: Here we provide evidence of an epigenetic mechanism for information processing. The study reveals that a class I HDAC inhibitor (Malvaez et al., 2013; Rumbaugh et al., 2015; RGFP966, chemical formula C21H19FN4O) alters the formation of auditory memory by

Histone Deacetylase Inhibition via RGFP966 Releases the Brakes on Sensory Cortical Plasticity and the Specificity of Memory Formation

Science.gov (United States)

Bechay, Kiro; Rusche, James R.; Jacques, Vincent; Kudugunti, Shashi; Miao, Wenyan; Weinberger, Norman M.; McGaugh, James L.

2015-01-01

Research over the past decade indicates a novel role for epigenetic mechanisms in memory formation. Of particular interest is chromatin modification by histone deacetylases (HDACs), which, in general, negatively regulate transcription. HDAC deletion or inhibition facilitates transcription during memory consolidation and enhances long-lasting forms of synaptic plasticity and long-term memory. A key open question remains: How does blocking HDAC activity lead to memory enhancements? To address this question, we tested whether a normal function of HDACs is to gate information processing during memory formation. We used a class I HDAC inhibitor, RGFP966 (C21H19FN4O), to test the role of HDAC inhibition for information processing in an auditory memory model of learning-induced cortical plasticity. HDAC inhibition may act beyond memory enhancement per se to instead regulate information in ways that lead to encoding more vivid sensory details into memory. Indeed, we found that RGFP966 controls memory induction for acoustic details of sound-to-reward learning. Rats treated with RGFP966 while learning to associate sound with reward had stronger memory and additional information encoded into memory for highly specific features of sounds associated with reward. Moreover, behavioral effects occurred with unusually specific plasticity in primary auditory cortex (A1). Class I HDAC inhibition appears to engage A1 plasticity that enables additional acoustic features to become encoded in memory. Thus, epigenetic mechanisms act to regulate sensory cortical plasticity, which offers an information processing mechanism for gating what and how much is encoded to produce exceptionally persistent and vivid memories. SIGNIFICANCE STATEMENT Here we provide evidence of an epigenetic mechanism for information processing. The study reveals that a class I HDAC inhibitor (Malvaez et al., 2013; Rumbaugh et al., 2015; RGFP966, chemical formula C21H19FN4O) alters the formation of auditory memory by

Collector floating potentials in a discharge plasma

International Nuclear Information System (INIS)

Cercek, M.; Gyergyek, T.

1999-01-01

We present the results of a study on electrode floating potential formation in a hot-cathode discharge plasma. The electron component of the plasma is composed from two populations. The high temperature component develops from primary electrons and the cool component from secondary electrons born by ionisation of cold neutral gas. A static, kinetic plasma-sheath model is use to calculate the pre-sheath potential and the floating potential of the electrode. For hot primary electrons a truncated Maxwellian distribution is assumed. The plasma system is also modelled numerically with a dynamic, electrostatic particle simulation. The plasma source injects temporally equal fluxes of ions and electrons with half-Maxwellian velocities. Again, the hot electron distribution is truncated in the high velocity tail. The plasma parameters, such as ion temperature and mass, electron temperatures, discharge voltages, etc. correspond to experimental values. The experimental measurements of the electrode floating potential are performed in weakly magnetised plasma produced with hot cathode discharge in argon gas. Theoretical, simulation and experimental results are compared and they agree very well.(author)

Maiden Voyage of the Under-Ice Float

Science.gov (United States)

Shcherbina, A.; D'Asaro, E. A.; Light, B.; Deming, J. W.; Rehm, E.

2016-02-01

The Under-Ice Float (UIF) is a new autonomous platform for sea ice and upper ocean observations in the marginal ice zone (MIZ). UIF is based on the Mixed Layer Lagrangian Float design, inheriting its accurate buoyancy control and relatively heavy payload capability. A major challenge for sustained autonomous observations in the MIZ is detection of open water for navigation and telemetry surfacings. UIF employs the new surface classification algorithm based on the spectral analysis of surface roughness sensed by an upward-looking sonar. A prototype UIF was deployed in the MIZ of the central Arctic Ocean in late August 2015. The main payload of the first UIF was a bio-optical suit consisting of upward- and downward hyperspectral radiometers; temperature, salinity, chlorophyll, turbidity, and dissolved oxygen sensors, and a high-definition photo camera. In the early stages of its mission, the float successfully avoided ice, detected leads, surfaced in open water, and transmitted data and photographs. We will present the analysis of these observations from the full UIF mission extending into the freeze-up season.

a Design of the Driver Airbag Module with Floating Horn Assembly

Science.gov (United States)

Suh, Chang-Min; Lee, Young-Hoon; Suh, Duck-Young

The driver airbag system is designed as a supplemental restraint system in addition to the seatbelt, and is designed to protect the driver's head and chest against severe injury by a device that is actuated in case of vehicle's fronted impact. Deployment of an airbag module with floating horn assembly is a highly dynamic process. The concept of driver airbag module with floating horn assembly and aluminum emblem is presented as a useful parameter when the airbag deploys and the energy is evaluated as performance factor in airbag module. Floating horn assembly is also one of the major factors for driver airbag module design to perform its horn function and check the package between driver airbag module and steering wheel. This study on the design of driver airbag module with floating horn assembly proved the feasibility as a new safety device. However, the system level study is needed for decrease of passenger injury. This study can be used for the implementation of a prototype of DABM with floating horn device.

The capture rate of free-floating planets in our galaxy

Science.gov (United States)

Goulinski, N.; Ribak, E. N.

2017-09-01

We propose that planetary nebulae and supernova remnants may constitute a significant source of free-floating planets. With a large population of free-floating planets, the rate at which these planets get captured by planetary systems may be non-negligible. We predict that about one out of every 100 sub-solar stars are expected to experience a capture of a free-floating planet during their lifetime. The capture cross section calculated through three-body scattering simulations in vacuum conditions. Since planetary systems usually contain multiple planets, and dissipation processes where not included in the simulation, the capture rate may be higher.

Turbomachinery systems for floating production applications

Energy Technology Data Exchange (ETDEWEB)

Windt, Jonathan P.; Kurz, Rainer [Solar Turbines Incorporated, San Diego, CA (United States)

2008-07-01

Since 1995 there has been a dramatic increase in oil and gas exploration and production using floating platforms in deeper waters located further offshore. This exploration started with tension leg platforms, progressed through SPARs and Semi-Submersibles, and later evolved into Floating Production Storage and Offloading (FPSO) vessels. Turbomachinery equipment installed on a floating platform or vessel will be expected to operate in the same manner as a land based machine, but in a variety of climate and environmental conditions that now includes motion. To operate successfully, specific design considerations for the turbo-machinery packages are required. It is critical to take into account the type of vessel, the expected list, trim and dynamic motion angles, the dynamic forces applied, the expected deck deflection as a result of those forces, understand the applicable class requirement, and where the equipment will be located on the vessel. This information is then translated into the design conditions to determine the type of mounting method to be used to attach the turbo-machinery package to the deck, the expected accelerations for structural analysis, and oil tank and system designs for fluid management. Furthermore, compressor designs need to allow utmost flexibility to adapt to changing operating conditions. (author)

Expert Oracle GoldenGate

CERN Document Server

Prusinski, Ben; Chung, Richard

2011-01-01

Expert Oracle GoldenGate is a hands-on guide to creating and managing complex data replication environments using the latest in database replication technology from Oracle. GoldenGate is the future in replication technology from Oracle, and aims to be best-of-breed. GoldenGate supports homogeneous replication between Oracle databases. It supports heterogeneous replication involving other brands such as Microsoft SQL Server and IBM DB2 Universal Server. GoldenGate is high-speed, bidirectional, highly-parallelized, and makes only a light impact on the performance of databases involved in replica

Sleep extension normalizes ERP of waking auditory sensory gating in healthy habitually short sleeping individuals.

Science.gov (United States)

Gumenyuk, Valentina; Korzyukov, Oleg; Roth, Thomas; Bowyer, Susan M; Drake, Christopher L

2013-01-01

Chronic sleep loss has been associated with increased daytime sleepiness, as well as impairments in memory and attentional processes. In the present study, we evaluated the neuronal changes of a pre-attentive process of wake auditory sensory gating, measured by brain event-related potential (ERP)--P50 in eight normal sleepers (NS) (habitual total sleep time (TST) 7 h 32 m) vs. eight chronic short sleeping individuals (SS) (habitual TST ≤6 h). To evaluate the effect of sleep extension on sensory gating, the extended sleep condition was performed in chronic short sleeping individuals. Thus, one week of time in bed (6 h 11 m) corresponding to habitual short sleep (hSS), and one week of extended time (∼ 8 h 25 m) in bed corresponding to extended sleep (eSS), were counterbalanced in the SS group. The gating ERP assessment was performed on the last day after each sleep condition week (normal sleep and habitual short and extended sleep), and was separated by one week with habitual total sleep time and monitored by a sleep diary. We found that amplitude of gating was lower in SS group compared to that in NS group (0.3 µV vs. 1.2 µV, at Cz electrode respectively). The results of the group × laterality interaction showed that the reduction of gating amplitude in the SS group was due to lower amplitude over the left hemisphere and central-midline sites relative to that in the NS group. After sleep extension the amplitude of gating increased in chronic short sleeping individuals relative to their habitual short sleep condition. The sleep condition × frontality interaction analysis confirmed that sleep extension significantly increased the amplitude of gating over frontal and central brain areas compared to parietal brain areas.

Sleep extension normalizes ERP of waking auditory sensory gating in healthy habitually short sleeping individuals.

Directory of Open Access Journals (Sweden)

Valentina Gumenyuk

Full Text Available Chronic sleep loss has been associated with increased daytime sleepiness, as well as impairments in memory and attentional processes. In the present study, we evaluated the neuronal changes of a pre-attentive process of wake auditory sensory gating, measured by brain event-related potential (ERP--P50 in eight normal sleepers (NS (habitual total sleep time (TST 7 h 32 m vs. eight chronic short sleeping individuals (SS (habitual TST ≤6 h. To evaluate the effect of sleep extension on sensory gating, the extended sleep condition was performed in chronic short sleeping individuals. Thus, one week of time in bed (6 h 11 m corresponding to habitual short sleep (hSS, and one week of extended time (∼ 8 h 25 m in bed corresponding to extended sleep (eSS, were counterbalanced in the SS group. The gating ERP assessment was performed on the last day after each sleep condition week (normal sleep and habitual short and extended sleep, and was separated by one week with habitual total sleep time and monitored by a sleep diary. We found that amplitude of gating was lower in SS group compared to that in NS group (0.3 µV vs. 1.2 µV, at Cz electrode respectively. The results of the group × laterality interaction showed that the reduction of gating amplitude in the SS group was due to lower amplitude over the left hemisphere and central-midline sites relative to that in the NS group. After sleep extension the amplitude of gating increased in chronic short sleeping individuals relative to their habitual short sleep condition. The sleep condition × frontality interaction analysis confirmed that sleep extension significantly increased the amplitude of gating over frontal and central brain areas compared to parietal brain areas.

Cooperative control system of the floating cranes for the dual lifting

OpenAIRE

Mihee Nam; Jinbeom Kim; Jaechang Lee; Daekyung Kim; Donghyuk Lee; Jangmyung Lee

2018-01-01

This paper proposes a dual lifting and its cooperative control system with two different kinds of floating cranes. The Mega-erection and Giga-erection in the ship building are used to handle heavier and wider blocks and modules as ships and off-shore platforms are enlarged. However, there is no equipment to handle such Tera-blocks. In order to overcome the limit on performance of existing floating cranes, the dual lifting is proposed in this research. In the dual lifting, two floating cranes ...

Cooperative control system of the floating cranes for the dual lifting

Directory of Open Access Journals (Sweden)

Mihee Nam

2018-01-01

Full Text Available This paper proposes a dual lifting and its cooperative control system with two different kinds of floating cranes. The Mega-erection and Giga-erection in the ship building are used to handle heavier and wider blocks and modules as ships and off-shore platforms are enlarged. However, there is no equipment to handle such Tera-blocks. In order to overcome the limit on performance of existing floating cranes, the dual lifting is proposed in this research. In the dual lifting, two floating cranes are well-coordinated to add up the lift capabilities of both cranes without any loss such that virtually a single crane is lifting, maneuvering and unloading. Two main constraints for the dual lifting are as follows: First, two barges of floating cranes should be constrained as a rigid body not to cause a relative motion between two barges and main hooks of the two cranes should be controlled as main hooks of a single crane. In order words, it is necessary to develop the cooperative control of two floating cranes in order to sustain a center of gravity of the module and minimize the tilting angle during the lifting and unloading by the two floating cranes. Two floating cranes are handled as a master-slave system. The master crane is able to gather information about all working conditions and make a decision to control the individual hook speed, which communicates the slave crane by TCP/IP. The developed control system has been embedded in the real floating crane systems and the dual lifting has been demonstrated five times at SHI shipyard in 2015. The moving angles of the lifting module are analyzed and verified to be suitable for hoisting control. It is verified that the dual lifting can be applied for many heavier and wider blocks and modules to shorten the construction time of ships and off-shore platforms.

Can Heavier Liquid Float on Top of a Lighter One?

International Nuclear Information System (INIS)

Ayyad, A. H.; Takrori, F.

2011-01-01

We report on a first observation of a floating spherical Hg (density 13 g/cm 3 ) drop on top of a glycerin (density 1.26 g/cm 3 ) drop, the latter is hemispherical and about four times larger in volume. This observation is clearly against nature's gravity law and has never been reported before. Here we present spectacular high resolution photos that clearly demonstrate this remarkable floating phenomenon. Using milli-Q water, the Hg drop would stay down adhered at the triple line. Instead, the coincidental use of tap water displays the same phenomenon. Increasing the volume of the supporting liquid to a certain value causes the Hg drop to sink. A 5-M NaCl aqueous solution is found enough to show the same floating phenomenon. This floating mercury as a phenomenon is puzzling. On this length scale it seems that surface tension and curvature dominate over gravity. (fundamental areas of phenomenology (including applications))

Fear memory in a neurodevelopmental model of schizophrenia based on the postnatal blockade of NMDA receptors.

Science.gov (United States)

Latusz, Joachim; Radaszkiewicz, Aleksandra; Bator, Ewelina; Wędzony, Krzysztof; Maćkowiak, Marzena

2017-02-01

Epidemiological data have indicated that memory impairment is observed during adolescence in groups at high risk for schizophrenia and might precede the appearance of schizophrenia symptoms in adulthood. In the present study, we used a neurodevelopmental model of schizophrenia based on the postnatal blockade of N-methyl-d-aspartate (NMDA) receptors in rats to investigate fear memory in adolescence and adulthood. The rats were treated with increasing doses of CGP 37849 (CGP), a competitive antagonist of the NMDA receptor (1.25mg/kg on days 1, 3, 6, 9; 2.5mg/kg on days 12, 15, 18 and 5mg/kg on day 21). Fear memory was analysed in delay and trace fear conditioning. Sensorimotor gating deficit, which is another cognitive symptom of schizophrenia, was also determined in adolescent and adult CGP-treated rats. Postnatal CGP administration disrupted cue- and context-dependent fear memory in adolescent rats in both delay and trace conditioning. In contrast, CGP administration evoked impairment only in cue-dependent fear memory in rats exposed to trace but not delay fear conditioning. The postnatal blockade of NMDA receptors induced sensorimotor gating deficits in adult rats but not in adolescent rats. The postnatal blockade of NMDA receptors induced fear memory impairment in adolescent rats before the onset of neurobehavioral deficits associated with schizophrenia. Copyright © 2016. Published by Elsevier Urban & Partner Sp. z o.o.

Charge storage and tunneling mechanism of Ni nanocrystals embedded HfO{sub x} film

Energy Technology Data Exchange (ETDEWEB)

Zhu, H. X.; Zhang, T.; Wang, R. X.; Zhang, Y. Y.; Li, L. T.; Qiu, X. Y., E-mail: qxy2001@swu.edu.cn [School of Physical Science and Technology, Southwest University, Chongqing 400715 (China)

2016-05-15

A nano-floating gate memory structure based on Ni nanocrystals (NCs) embedded HfO{sub x} film is deposited by means of radio-frequency magnetron sputtering. Microstructure investigations reveal that self-organized Ni-NCs with diameters of 4-8 nm are well dispersed in amorphous HfO{sub x} matrix. Pt/Ni-NCs embedded HfO{sub x}/Si/Ag capacitor structures exhibit voltage-dependent capacitance-voltage hysteresis, and a maximum flat-band voltage shift of 1.5 V, corresponding to a charge storage density of 6.0 × 10{sup 12} electrons/cm{sup 2}, is achieved. These capacitor memory cells exhibit good endurance characteristic up to 4 × 10{sup 4} cycles and excellent retention performance of 10{sup 5} s, fulfilling the requirements of next generation non-volatile memory devices. Schottky tunneling is proven to be responsible for electrons tunneling in these capacitors.

Axially modulated arch resonator for logic and memory applications

KAUST Repository

Hafiz, Md Abdullah Al

2018-01-17

We demonstrate reconfigurable logic and random access memory devices based on an axially modulated clamped-guided arch resonator. The device is electrostatically actuated and the motional signal is capacitively sensed, while the resonance frequency is modulated through an axial electrostatic force from the guided side of the microbeam. A multi-physics finite element model is used to verify the effectiveness of the axial modulation. We present two case studies: first, a reconfigurable two-input logic gate based on the linear resonance frequency modulation, and second, a memory element based on the hysteretic frequency response of the resonator working in the nonlinear regime. The energy consumptions of the device for both logic and memory operations are in the range of picojoules, promising for energy efficient alternative computing paradigm.

Hydroelasticity of a Floating Plate

DEFF Research Database (Denmark)

Chen, X.; Jensen, Jørgen Juncher; Cui, W.

2003-01-01

The membrane forces are included in the hydroelastic analysis of a floating plate undergoing large vertical deflections in regular monochromatic multidirectional waves. The first-order vertical displacements induced by the linear wave exciting forces are calculated by the mode expansion method in...

The impact of the night float system on internal medicine residency programs.

Science.gov (United States)

Trontell, M C; Carson, J L; Taragin, M I; Duff, A

1991-01-01

To study the design, method of implementation, perceived benefits, and problems associated with a night float system. Self-administered questionnaire completed by program directors, which included both structured and open-ended questions. The answers reflect resident and student opinions as well as those of the program directors, since program directors regularly obtain feedback from these groups. The 442 accredited internal medicine residency programs listed in the 1988-89 Directory of Graduate Medical Education Programs. Of the 442 programs, 79% responded, and 30% had experience with a night float system. The most frequent methods for initiating a night float system included: decreasing elective time (42.3%), hiring more residents (26.9%), creating a non-teaching service (12.5%), and reallocating housestaff time (9.6%). Positive effects cited include decreased fatigue, improved housestaff morale, improved recruiting, and better attitude toward internal medicine training. The quality of medical care was considered the same or better by most programs using it. The most commonly cited problems were decreased continuity of care, inadequate teaching of the night float team, and miscommunication. Residency programs using a night float system usually observe a positive effect on housestaff morale, recruitment, and working hours and no detrimental effect on the quality of patient care. Miscommunication and inadequate learning experience for the night float team are important potential problems. This survey suggests that the night float represents one solution to reducing resident working hours.

Design and Evaluation of an Oral Floating Matrix Tablet of ...

African Journals Online (AJOL)

Purpose: To develop floating matrix tablets of salbutamol sulphate using ethyl cellulose and acrycoat S-100 as polymers, and sodium bicarbonate, citric acid and tartaric acid as gas generating agents. Methods: Twenty four formulations were prepared and segregated into four major categories, A to D. The floating tablets ...

14 CFR 25.529 - Hull and main float landing conditions.

Science.gov (United States)

2010-01-01

... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Hull and main float landing conditions. 25... AIRCRAFT AIRWORTHINESS STANDARDS: TRANSPORT CATEGORY AIRPLANES Structure Water Loads § 25.529 Hull and main.... (b) Unsymmetrical landing for hull and single float seaplanes. Unsymmetrical step, bow, and stern...

Dynamic modeling of a spar-type floating offshore wind turbine

NARCIS (Netherlands)

Savenije, L.B.; Ashuri, T.; Van Bussel, G.J.W.; Staerdahl, J.W.

2010-01-01

The installation of floating wind farms in deeper water is encouraged by the stronger and steadier wind, the lower visibility and noise impact, the absence of road restrictions, but also the absence or shortage of shallow water. In the summer of 2009, the first large-scale floating wind turbine

Estimation of Structure-Borne Noise Reduction Effect of Steel Railway Bridge Equipped with Floating Ladder Track and Floating Reinforced-Concrete Deck

Science.gov (United States)

Watanabe, Tsutomu; Sogabe, Masamichi; Asanuma, Kiyoshi; Wakui, Hajime

A number of steel railway bridges have been constructed in Japan. Thin steel members used for the bridges easily tend to vibrate and generate structure-borne noise. Accordingly, the number of constructions of steel railway bridges tends to decrease in the urban areas from a viewpoint of environmental preservation. Then, as a countermeasure against structure-borne noise generated from steel railway bridges, we have developed a new type of the steel railway bridge equipped with a floating-ladder track and a floating reinforced-concrete (RC) deck. As a result of train-running experiment, it became apparent that the new steel railway bridge installed by double floating system has reduced a vibration velocity level by 10.5 dB(A) at main girder web as compared with a steel railway bridge installed by directly fastened track. This reduction effect was achieved by the ladder track and RC deck supported by resilient materials.

Life cycle assessment of a floating offshore wind turbine

Energy Technology Data Exchange (ETDEWEB)

Weinzettel, Jan [Department of Electrotechnology, Faculty of Electrical Engineering, Czech Technical University in Prague, Technicka 2, Praha 166 27 (Czech Republic); Charles University in Prague Environment Center, U Krize 8, Prague 158 00 (Czech Republic); Reenaas, Marte; Solli, Christian [Industrial Ecology Programme, Norwegian University of Science and Technology (NTNU), 7491 Trondheim (Norway); Hertwich, Edgar G. [Industrial Ecology Programme, Norwegian University of Science and Technology (NTNU), 7491 Trondheim (Norway); Department of Energy and Process Engineering, Norwegian University of Science and Technology (NTNU), 7491 Trondheim (Norway)

2009-03-15

A development in wind energy technology towards higher nominal power of the wind turbines is related to the shift of the turbines to better wind conditions. After the shift from onshore to offshore areas, there has been an effort to move further from the sea coast to the deep water areas, which requires floating windmills. Such a concept brings additional environmental impact through higher material demand. To evaluate additional environmental burdens and to find out whether they can be rebalanced or even offset by better wind conditions, a prospective life cycle assessment (LCA) study of one floating concept has been performed and the results are presented in this paper. A comparison with existing LCA studies of conventional offshore wind power and electricity from a natural gas combined cycle is presented. The results indicate similar environmental impacts of electricity production using floating wind power plants as using non-floating offshore wind power plants. The most important stage in the life cycle of the wind power plants is the production of materials. Credits that are connected to recycling these materials at the end-of-life of the power plant are substantial. (author)

Modelling and Simulation of Free Floating Pig for Different Pipeline Inclination Angles

Directory of Open Access Journals (Sweden)

Woldemichael Dereje Engida

2016-01-01

Full Text Available This paper presents a modelling and simulation of free floating pig to determine the flow parameters to avoid pig stalling in pigging operation. A free floating spherical shaped pig was design and equipped with necessary sensors to detect leak along the pipeline. The free floating pig does not have internal or external power supply to navigate through the pipeline. Instead, it is being driven by the flowing medium. In order to avoid stalling of the pig, it is essential to conduct simulation to determine the necessary flow parameters for different inclination angles. Accordingly, a pipeline section with inclination of 0°, 15°, 30°, 45°, 60°, 75°, and 90° were modelled and simulated using ANSYS FLUENT 15.0 with water and oil as working medium. For each case, the minimum velocity required to propel the free floating pig through the inclination were determined. In addition, the trajectory of the free floating pig has been visualized in the simulation.

GATE V6: a major enhancement of the GATE simulation platform enabling modelling of CT and radiotherapy

Energy Technology Data Exchange (ETDEWEB)

Jan, S; Becheva, E [DSV/I2BM/SHFJ, Commissariat a l' Energie Atomique, Orsay (France); Benoit, D; Rehfeld, N; Stute, S; Buvat, I [IMNC-UMR 8165 CNRS-Paris 7 and Paris 11 Universities, 15 rue Georges Clemenceau, 91406 Orsay Cedex (France); Carlier, T [INSERM U892-Cancer Research Center, University of Nantes, Nantes (France); Cassol, F; Morel, C [Centre de physique des particules de Marseille, CNRS-IN2P3 and Universite de la Mediterranee, Aix-Marseille II, 163, avenue de Luminy, 13288 Marseille Cedex 09 (France); Descourt, P; Visvikis, D [INSERM, U650, Laboratoire du Traitement de l' Information Medicale (LaTIM), CHU Morvan, Brest (France); Frisson, T; Grevillot, L; Guigues, L; Sarrut, D; Zahra, N [Universite de Lyon, CREATIS, CNRS UMR5220, Inserm U630, INSA-Lyon, Universite Lyon 1, Centre Leon Berard (France); Maigne, L; Perrot, Y [Laboratoire de Physique Corpusculaire, 24 Avenue des Landais, 63177 Aubiere Cedex (France); Schaart, D R [Delft University of Technology, Radiation Detection and Medical Imaging, Mekelweg 15, 2629 JB Delft (Netherlands); Pietrzyk, U, E-mail: buvat@imnc.in2p3.fr [Reseach Center Juelich, Institute of Neurosciences and Medicine and Department of Physics, University of Wuppertal (Germany)

2011-02-21

GATE (Geant4 Application for Emission Tomography) is a Monte Carlo simulation platform developed by the OpenGATE collaboration since 2001 and first publicly released in 2004. Dedicated to the modelling of planar scintigraphy, single photon emission computed tomography (SPECT) and positron emission tomography (PET) acquisitions, this platform is widely used to assist PET and SPECT research. A recent extension of this platform, released by the OpenGATE collaboration as GATE V6, now also enables modelling of x-ray computed tomography and radiation therapy experiments. This paper presents an overview of the main additions and improvements implemented in GATE since the publication of the initial GATE paper (Jan et al 2004 Phys. Med. Biol. 49 4543-61). This includes new models available in GATE to simulate optical and hadronic processes, novelties in modelling tracer, organ or detector motion, new options for speeding up GATE simulations, examples illustrating the use of GATE V6 in radiotherapy applications and CT simulations, and preliminary results regarding the validation of GATE V6 for radiation therapy applications. Upon completion of extensive validation studies, GATE is expected to become a valuable tool for simulations involving both radiotherapy and imaging.

Short-Term Synaptic Plasticity Regulation in Solution-Gated Indium-Gallium-Zinc-Oxide Electric-Double-Layer Transistors.

Science.gov (United States)

Wan, Chang Jin; Liu, Yang Hui; Zhu, Li Qiang; Feng, Ping; Shi, Yi; Wan, Qing

2016-04-20

In the biological nervous system, synaptic plasticity regulation is based on the modulation of ionic fluxes, and such regulation was regarded as the fundamental mechanism underlying memory and learning. Inspired by such biological strategies, indium-gallium-zinc-oxide (IGZO) electric-double-layer (EDL) transistors gated by aqueous solutions were proposed for synaptic behavior emulations. Short-term synaptic plasticity, such as paired-pulse facilitation, high-pass filtering, and orientation tuning, was experimentally emulated in these EDL transistors. Most importantly, we found that such short-term synaptic plasticity can be effectively regulated by alcohol (ethyl alcohol) and salt (potassium chloride) additives. Our results suggest that solution gated oxide-based EDL transistors could act as the platforms for short-term synaptic plasticity emulation.

Float level switch for a nuclear power plant containment vessel

International Nuclear Information System (INIS)

Powell, J.G.

1993-01-01

This invention is a float level switch used to sense rise or drop in water level in a containment vessel of a nuclear power plant during a loss of coolant accident. The essential components of the device are a guide tube, a reed switch inside the guide tube, a float containing a magnetic portion that activates a reed switch, and metal-sheathed, ceramic-insulated conductors connecting the reed switch to a monitoring system outside the containment vessel. Special materials and special sealing techniques prevent failure of components and allow the float level switch to be connected to a monitoring system outside the containment vessel. 1 figures

Float level switch for a nuclear power plant containment vessel

Science.gov (United States)

Powell, James G.

1993-01-01

This invention is a float level switch used to sense rise or drop in water level in a containment vessel of a nuclear power plant during a loss of coolant accident. The essential components of the device are a guide tube, a reed switch inside the guide tube, a float containing a magnetic portion that activates a reed switch, and metal-sheathed, ceramic-insulated conductors connecting the reed switch to a monitoring system outside the containment vessel. Special materials and special sealing techniques prevent failure of components and allow the float level switch to be connected to a monitoring system outside the containment vessel.

CLINICAL OUTCOME AFTER OPERATIVE TREATMENT IN FLOATING SHOULDER- A PROSPECTIVE STUDY

Directory of Open Access Journals (Sweden)

Nabarun Saha

2017-06-01

Full Text Available BACKGROUND The ‘floating shoulder’ is a rare injury consisting of ipsilateral fractures of the clavicle and glenoid neck. Although it may appear to be bony injury, studies suggest that ligamentous disruption associated with ipsilateral clavicle fracture and scapular neck fracture contributes to such entity. More commonly floating shoulder is defined as double disruption of the superior shoulder suspensory complex. Open reduction and internal fixation of both the fractures is the treatment of choice. We have made this study to assess clinical outcome after operative treatment of floating shoulder by DASH score. MATERIALS AND METHODS This is a study of 10 cases of floating shoulder injury operated in the same sitting by anterior approach for fracture clavicle and Judet’s posterior approach for scapula fracture from Jan 2014 to Oct 2016. All cases were assessed with DASH score at the end of six months. RESULTS Results of our study shows that majority of patients had excellent to good results with improvement in DASH score from 92.8 to 16.8 at final follow up. No major complications. All patients had radiological signs of union at the end of 1 year. CONCLUSION Surgical intervention should be considered for all floating shoulder injuries. open reduction and internal fixation not only increases stability but also to improves functional outcome of the patient. DASH score is an effective method to assess clinicofunctional outcome in post-operative cases of floating shoulder.

Differential Response of Floating and Submerged Leaves of Longleaf Pondweed to Silver Ions

Directory of Open Access Journals (Sweden)

Nisha Shabnam

2017-06-01

Full Text Available In this study, we have investigated variations in the potential of floating and submerged leaves of longleaf pondweed (Potamogeton nodosus to withstand silver ion (Ag+-toxicity. Both floating and submerged leaves changed clear colorless AgNO3 solutions to colloidal brown in the presence of light. Transmission electron microscopy revealed the presence of distinct crystalline Ag-nanoparticles (Ag-NPs in these brown solutions. Powder X-ray diffraction pattern showed that Ag-NPs were composed of Ag0 and Ag2O. Photosystem (PS II efficiency of leaves declined upon exposure to Ag+ with a significantly higher decline in the submerged leaves than in the floating leaves. Similarly, Ag+ treatment caused a significant reduction in the carboxylase activity of the ribulose bisphosphate carboxylase/oxygenase in leaves. The reduction in this carboxylase activity was significantly higher in the submerged than in the floating leaves. Ag+ treatment also resulted in a significant decline in the levels of non-enzymatic and enzymatic antioxidants; the decline was significantly lower in the floating than in submerged leaves. X-ray photoelectron spectroscopy revealed the presence of Ag2O in these leaves. Inductively coupled plasma mass spectrometry analysis revealed a three-fold higher Ag content in the submerged than in floating leaves. Our study demonstrates that floating leaves of longleaf pondweed have a superior potential to counter Ag+-toxicity compared with submerged leaves, which could be due to superior potential of floating leaves to reduce Ag+ to less/non-toxic Ag0/Ag2O-nanoparticles/nanocomplexes. We suggest that modulating the genotype of longleaf pondweed to bear higher proportion of floating leaves would help in cleaning fresh water bodies contaminated with ionic forms of heavy metals.

Investigation of Tank 241-AN-101 Floating Solids

Energy Technology Data Exchange (ETDEWEB)

Kraft, Douglas P. [Washington River Protection Solutions, LLC, Richland, VA (United States); Meznarich, H. K. [Washington River Protection Solutions, LLC, Richland, VA (United States)

2017-10-30

Tank 241-AN-101 is the receiver tank for retrieval of several C-Farms waste tanks, including Tanks 241-C-102 and 241-C-111. Tank 241 C 111 received first-cycle decontamination waste from the bismuth phosphate process and Plutonium and Uranium Extraction cladding waste, as well as hydraulic fluid. Three grab samples, 1AN-16-01, 1AN-16-01A, and 1AN-16-01B, were collected at the surface of Tank 241-AN-101 on April 25, 2016, after Tank 241-C-111 retrieval was completed. Floating solids were observed in the three grab samples in the 11A hot cell after the samples were received at the 222-S Laboratory. Routine chemical analyses, solid phase characterization on the floating and settled solids, semivolatile organic analysis mainly on the aqueous phase for identification of degradation products of hydraulic fluids were performed. Investigation of the floating solids is reported.

14 CFR 23.531 - Hull and main float takeoff condition.

Science.gov (United States)

2010-01-01

... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Hull and main float takeoff condition. 23.531 Section 23.531 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION... Water Loads § 23.531 Hull and main float takeoff condition. For the wing and its attachment to the hull...

14 CFR 25.531 - Hull and main float takeoff condition.

Science.gov (United States)

2010-01-01

... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Hull and main float takeoff condition. 25... AIRCRAFT AIRWORTHINESS STANDARDS: TRANSPORT CATEGORY AIRPLANES Structure Water Loads § 25.531 Hull and main float takeoff condition. For the wing and its attachment to the hull or main float— (a) The aerodynamic...

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

KAUST Repository

Ghoneim, Mohamed T.; Hussain, Muhammad Mustafa

2015-01-01

Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT), the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a comprehensive perspective on the most notable approaches to the fabrication of physically flexible memory devices. With the future goal of replacing traditional mechanical hard disks with solid-state storage devices, a fully flexible electronic system will need two basic devices: transistors and nonvolatile memory. Transistors are used for logic operations and gating memory arrays, while nonvolatile memory (NVM) devices are required for storing information in the main memory and cache storage. Since the highest density of transistors and storage structures is manifested in memories, the focus of this review is flexible NVM. Flexible NVM components are discussed in terms of their functionality, performance metrics, and reliability aspects, all of which are critical components for NVM technology to be part of mainstream consumer electronics, IoT, and advanced healthcare devices. Finally, flexible NVMs are benchmarked and future prospects are provided.

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

Directory of Open Access Journals (Sweden)

Mohamed T. Ghoneim

2015-07-01

Full Text Available Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT, the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a comprehensive perspective on the most notable approaches to the fabrication of physically flexible memory devices. With the future goal of replacing traditional mechanical hard disks with solid-state storage devices, a fully flexible electronic system will need two basic devices: transistors and nonvolatile memory. Transistors are used for logic operations and gating memory arrays, while nonvolatile memory (NVM devices are required for storing information in the main memory and cache storage. Since the highest density of transistors and storage structures is manifested in memories, the focus of this review is flexible NVM. Flexible NVM components are discussed in terms of their functionality, performance metrics, and reliability aspects, all of which are critical components for NVM technology to be part of mainstream consumer electronics, IoT, and advanced healthcare devices. Finally, flexible NVMs are benchmarked and future prospects are provided.

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

KAUST Repository

Ghoneim, Mohamed T.

2015-07-23

Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT), the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a comprehensive perspective on the most notable approaches to the fabrication of physically flexible memory devices. With the future goal of replacing traditional mechanical hard disks with solid-state storage devices, a fully flexible electronic system will need two basic devices: transistors and nonvolatile memory. Transistors are used for logic operations and gating memory arrays, while nonvolatile memory (NVM) devices are required for storing information in the main memory and cache storage. Since the highest density of transistors and storage structures is manifested in memories, the focus of this review is flexible NVM. Flexible NVM components are discussed in terms of their functionality, performance metrics, and reliability aspects, all of which are critical components for NVM technology to be part of mainstream consumer electronics, IoT, and advanced healthcare devices. Finally, flexible NVMs are benchmarked and future prospects are provided.

A refractory metal gate approach for micronic CMOS technology

International Nuclear Information System (INIS)

Lubowiecki, V.; Ledys, J.L.; Plossu, C.; Balland, B.

1987-01-01

In the future, devices scaling down, integration density and performance improvements are going to bring a number of conventional circuit design and process techniques to their fundamental limits. To avoid any severe limitations in MOS ULSI (Ultra Large Scale Integration) technologies, interconnection materials and schemes are required to emerge, in order to face the Megabits memory field. Among those, the gate approach will obviously take a keyrole, when the operating speed of ULSI chips will reach the practical upper limits imposed by parasitic resistances and capacitances which stem from the circuit interconnect wiring. Even if fairly suitable for MOS process, doped polycrystalline silicon is being gradually replaced by refractory metal silicide or polycide structures, which match better with low resistivity requirements. However, as we approach the submicronic IC's, higher conductivity materials will be paid more and more attention. Recently, works have been devoted and published on refractory metal gate technologies. Molybdenum or tungsten, deposited either by CVD or PVD methods, are currently reported even if some drawbacks in their process integration still remain. This paper is willing to present such an approach based on tungsten (more reliable than Molybdenum deposited by LPCVD (giving more conductive and more stable films than PVD). Deposition process will be first described. Then CMOS process flow will allow us to focus on specific refractory metal gate issues. Finally, electrical and physical properties will be assessed, which will demonstrate the feasibility of such a technology as well as the compatibility of the tungsten with most of the usual techniques

New opening hours of the gates

CERN Multimedia

GS Department

2009-01-01

Please note the new opening hours of the gates as well as the intersites tunnel from the 19 May 2009: GATE A 7h - 19h GATE B 24h/24 GATE C 7h - 9h\t17h - 19h GATE D 8h - 12h\t13h - 16h GATE E 7h - 9h\t17h - 19h Prévessin 24h/24 The intersites tunnel will be opened from 7h30 to 18h non stop. GS-SEM Group Infrastructure and General Services Department

Gating characteristics control glutamate receptor distribution and trafficking in vivo.

Science.gov (United States)

Petzoldt, Astrid G; Lee, Yü-Hien; Khorramshahi, Omid; Reynolds, Eric; Plested, Andrew J R; Herzel, Hanspeter; Sigrist, Stephan J

2014-09-08

Glutamate-releasing synapses dominate excitatory release in the brain. Mechanisms governing their assembly are of major importance for circuit development and long-term plasticity underlying learning and memory. AMPA/Kainate-type glutamate receptors (GluRs) are tetrameric ligand-gated ion channels that open their ion-conducting pores in response to binding of the neurotransmitter. Changes in subunit composition of postsynaptic GluRs are highly relevant for plasticity and development of glutamatergic synapses [1-4]. To date, posttranslational modifications, mostly operating via the intracellular C-terminal domains (CTDs) of GluRs, are presumed to be the major regulator of trafficking [5]. In recent years, structural and electrophysiological analyses have improved our understanding of GluR gating mechanism [6-11]. However, whether conformational changes subsequent to glutamate binding may per se be able to influence GluR trafficking has remained an unaddressed question. Using a Drosophila system allowing for extended visualization of GluR trafficking in vivo, we here provide evidence that mutations changing the gating behavior alter GluR distribution and trafficking. GluR mutants associated with reduced charge transfer segregated from coexpressed wild-type GluRs on the level of individual postsynaptic densities. Segregation was lost upon blocking of evoked glutamate release. Photobleaching experiments suggested increased mobility of mutants with reduced charge transfer, which accumulated prematurely during early steps of synapse assembly, but failed to further increase their level in accordance with assembly of the presynaptic scaffold. In summary, gating characteristics seem to be a new variable for the understanding of GluR trafficking relevant to both development and plasticity. Copyright © 2014 Elsevier Ltd. All rights reserved.

Wave energy absorption by a submerged air bag connected to a rigid float

DEFF Research Database (Denmark)

Kurniawan, Adi; Chaplin, J. R.; Hann, M. R.

2017-01-01

A new wave energy device features a submerged ballasted air bag connected at the top to a rigid float. Under wave action, the bag expands and contracts, creating a reciprocating air flow through a turbine between the bag and another volume housed within the float. Laboratory measurements are gene......A new wave energy device features a submerged ballasted air bag connected at the top to a rigid float. Under wave action, the bag expands and contracts, creating a reciprocating air flow through a turbine between the bag and another volume housed within the float. Laboratory measurements...

Optical XOR gate

Science.gov (United States)

Vawter, G. Allen

2013-11-12

An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

Intrinsic respiratory gating in small-animal CT

International Nuclear Information System (INIS)

Bartling, Soenke H.; Dinkel, Julien; Kauczor, Hans-Ulrich; Stiller, Wolfram; Semmler, Wolfhard; Grasruck, Michael; Madisch, Ijad; Gupta, Rajiv; Kiessling, Fabian

2008-01-01

Gating in small-animal CT imaging can compensate artefacts caused by physiological motion during scanning. However, all published gating approaches for small animals rely on additional hardware to derive the gating signals. In contrast, in this study a novel method of intrinsic respiratory gating of rodents was developed and tested for mice (n=5), rats (n=5) and rabbits (n=2) in a flat-panel cone-beam CT system. In a consensus read image quality was compared with that of non-gated and retrospective extrinsically gated scans performed using a pneumatic cushion. In comparison to non-gated images, image quality improved significantly using intrinsic and extrinsic gating. Delineation of diaphragm and lung structure improved in all animals. Image quality of intrinsically gated CT was judged to be equivalent to extrinsically gated ones. Additionally 4D datasets were calculated using both gating methods. Values for expiratory, inspiratory and tidal lung volumes determined with the two gating methods were comparable and correlated well with values known from the literature. We could show that intrinsic respiratory gating in rodents makes additional gating hardware and preparatory efforts superfluous. This method improves image quality and allows derivation of functional data. Therefore it bears the potential to find wide applications in small-animal CT imaging. (orig.)

Resident perceptions of the educational value of night float rotations.

Science.gov (United States)

Luks, Andrew M; Smith, C Scott; Robins, Lynne; Wipf, Joyce E

2010-07-01

Night float rotations are being increasingly used in the era of resident physician work-hour regulations, but their impact on resident education is not clear. Our objective was to clarify resident perceptions of the educational aspects of night float rotations. An anonymous survey of internal medicine residents at a university-based residency program was completed. Responses were received from 116 of 163 surveyed residents (71%). Residents attended less residents' report (0.10 +/- .43 vs. 2.70 + 0.93 sessions/week, peducational value of night float, sleep cycle adjustment issues, and impact on their personal lives, which correlated with resident evaluations from the regular program evaluation process. In free responses, residents commented that they liked the autonomy and opportunity to improve triage skills on these rotations and confirmed their negative opinions about the sleep-wake cycle and interference with personal lives. Internal medicine residents at a university-based program have negative opinions regarding the educational value of night float rotations. Further work is necessary to determine whether problems exist across programs and specialties.

A review of emerging non-volatile memory (NVM) technologies and applications

Science.gov (United States)

Chen, An

2016-11-01

This paper will review emerging non-volatile memory (NVM) technologies, with the focus on phase change memory (PCM), spin-transfer-torque random-access-memory (STTRAM), resistive random-access-memory (RRAM), and ferroelectric field-effect-transistor (FeFET) memory. These promising NVM devices are evaluated in terms of their advantages, challenges, and applications. Their performance is compared based on reported parameters of major industrial test chips. Memory selector devices and cell structures are discussed. Changing market trends toward low power (e.g., mobile, IoT) and data-centric applications create opportunities for emerging NVMs. High-performance and low-cost emerging NVMs may simplify memory hierarchy, introduce non-volatility in logic gates and circuits, reduce system power, and enable novel architectures. Storage-class memory (SCM) based on high-density NVMs could fill the performance and density gap between memory and storage. Some unique characteristics of emerging NVMs can be utilized for novel applications beyond the memory space, e.g., neuromorphic computing, hardware security, etc. In the beyond-CMOS era, emerging NVMs have the potential to fulfill more important functions and enable more efficient, intelligent, and secure computing systems.

Effect analysis of geometric parameters of floating raft on isolation performance

Directory of Open Access Journals (Sweden)

LI Shangda

2017-12-01

Full Text Available [Objectives] This paper focuses on the effects of the geometric parameters of a floating raft on isolation performance.[Methods] Based on the idea that the weight of a floating raft remains constant, a parametric finite element model is established using geometric parameters, and the effects of the geometric parameters when isolation performance is measured by vibration level difference are discussed.[Results] The effects of the geometric parameters of a floating raft on isolation performance are mainly reflected in the middle and high frequency areas. The most important geometric parameters which have an impact on isolation performance are the raft's height, length to width ratio and number of ribs. Adjusting the geometric parameters of the raft is one effective way to avoid the vibration frequency of mechanical equipment.[Conclusions] This paper has some practical value for the engineering design of floating raft isolation systems.

Signatures of Mechanosensitive Gating.

Science.gov (United States)

Morris, Richard G

2017-01-10

The question of how mechanically gated membrane channels open and close is notoriously difficult to address, especially if the protein structure is not available. This perspective highlights the relevance of micropipette-aspirated single-particle tracking-used to obtain a channel's diffusion coefficient, D, as a function of applied membrane tension, σ-as an indirect assay for determining functional behavior in mechanosensitive channels. While ensuring that the protein remains integral to the membrane, such methods can be used to identify not only the gating mechanism of a protein, but also associated physical moduli, such as torsional and dilational rigidity, which correspond to the protein's effective shape change. As an example, three distinct D-versus-σ "signatures" are calculated, corresponding to gating by dilation, gating by tilt, and gating by a combination of both dilation and tilt. Both advantages and disadvantages of the approach are discussed. Copyright © 2017 Biophysical Society. Published by Elsevier Inc. All rights reserved.

14 CFR 23.527 - Hull and main float load factors.

Science.gov (United States)

2010-01-01

... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Hull and main float load factors. 23.527... Water Loads § 23.527 Hull and main float load factors. (a) Water reaction load factors nw must be...=seaplane landing weight in pounds. (6) K1=empirical hull station weighing factor, in accordance with figure...

Quantum gate decomposition algorithms.

Energy Technology Data Exchange (ETDEWEB)

Slepoy, Alexander

2006-07-01

Quantum computing algorithms can be conveniently expressed in a format of a quantum logical circuits. Such circuits consist of sequential coupled operations, termed ''quantum gates'', or quantum analogs of bits called qubits. We review a recently proposed method [1] for constructing general ''quantum gates'' operating on an qubits, as composed of a sequence of generic elementary ''gates''.

Axially Modulated Clamped-Guided Arch Resonator for Memory and Logic Applications

KAUST Repository

Hafiz, Md Abdullah Al; Tella, Sherif Adekunle; Alcheikh, Nouha; Fariborzi, Hossein; Younis, Mohammad I.

2017-01-01

We experimentally demonstrate memory and logic devices based on an axially modulated clamped-guided arch resonator. The device are electrostatically actuated and capacitively sensed, while the resonance frequency modulation is achieved through an axial electrostatic force from the guided side of the clamped-guided arch microbeam. We present two case studies: first, a dynamic memory based on the nonlinear frequency response of the resonator, and second, a reprogrammable two-input logic gate based on the linear frequency modulation of the resonator. These devices show energy cost per memory/logic operation in pJ, are fully compatible with CMOS fabrication processes, have the potential for on-chip system integration, and operate at room temperature.

Axially Modulated Clamped-Guided Arch Resonator for Memory and Logic Applications

KAUST Repository

Hafiz, Md Abdullah Al

2017-11-03

We experimentally demonstrate memory and logic devices based on an axially modulated clamped-guided arch resonator. The device are electrostatically actuated and capacitively sensed, while the resonance frequency modulation is achieved through an axial electrostatic force from the guided side of the clamped-guided arch microbeam. We present two case studies: first, a dynamic memory based on the nonlinear frequency response of the resonator, and second, a reprogrammable two-input logic gate based on the linear frequency modulation of the resonator. These devices show energy cost per memory/logic operation in pJ, are fully compatible with CMOS fabrication processes, have the potential for on-chip system integration, and operate at room temperature.

Lossy/Lossless Floating/Grounded Inductance Simulation Using One DDCC

Directory of Open Access Journals (Sweden)

M. A. Ibrahim

2012-04-01

Full Text Available In this work, we present new topologies for realizing one lossless grounded inductor and two floating, one lossless and one lossy, inductors employing a single differential difference current conveyor (DDCC and a minimum number of passive components, two resistors, and one grounded capacitor. The floating inductors are based on ordinary dual-output differential difference current conveyor (DO-DDCC while the grounded lossless inductor is based one a modified dual-output differential difference current conveyor (MDO-DDCC. The proposed lossless floating inductor is obtained from the lossy one by employing a negative impedance converter (NIC. The non-ideality effects of the active element on the simulated inductors are investigated. To demonstrate the performance of the proposed grounded inductance simulator as an example, it is used to construct a parallel resonant circuit. SPICE simulation results are given to confirm the theoretical analysis.

Optimal Control of a Ballast-Stabilized Floating Wind Turbine

DEFF Research Database (Denmark)

Christiansen, Søren; Knudsen, Torben; Bak, Thomas

2011-01-01

Offshore wind energy capitalizes on the higher and less turbulent wind speeds at sea. The use of floating structures for deeper waters is being explored. The control objective is a tradeoff between power capture and fatigue, especially that produced by the oscillations caused by the reduced...... structural stiffness of a floating installation in combination with a coupling between the fore–aft motion of the tower and the blade pitch. To address this problem, the present paper models a ballast-stabilized floating wind turbine, and suggests a linear quadratic regulator (LQR) in combination with a wind...... estimator and a state observer. The results are simulated using aero elastic code and analysed in terms of damage equivalent loads. When compared to a baseline controller, this controller clearly demonstrates better generator speed and power tracking while reducing fatigue loads....

Circadian modulation of short-term memory in Drosophila.

Science.gov (United States)

Lyons, Lisa C; Roman, Gregg

2009-01-01

Endogenous biological clocks are widespread regulators of behavior and physiology, allowing for a more efficient allocation of efforts and resources over the course of a day. The extent that different processes are regulated by circadian oscillators, however, is not fully understood. We investigated the role of the circadian clock on short-term associative memory formation using a negatively reinforced olfactory-learning paradigm in Drosophila melanogaster. We found that memory formation was regulated in a circadian manner. The peak performance in short-term memory (STM) occurred during the early subjective night with a twofold performance amplitude after a single pairing of conditioned and unconditioned stimuli. This rhythm in memory is eliminated in both timeless and period mutants and is absent during constant light conditions. Circadian gating of sensory perception does not appear to underlie the rhythm in short-term memory as evidenced by the nonrhythmic shock avoidance and olfactory avoidance behaviors. Moreover, central brain oscillators appear to be responsible for the modulation as cryptochrome mutants, in which the antennal circadian oscillators are nonfunctional, demonstrate robust circadian rhythms in short-term memory. Together these data suggest that central, rather than peripheral, circadian oscillators modulate the formation of short-term associative memory and not the perception of the stimuli.

On the accuracy of current TCAD hot carrier injection models in nanoscale devices

Science.gov (United States)

Zaka, Alban; Rafhay, Quentin; Iellina, Matteo; Palestri, Pierpaolo; Clerc, Raphaël; Rideau, Denis; Garetto, Davide; Dornel, Erwan; Singer, Julien; Pananakakis, Georges; Tavernier, Clément; Jaouen, Hervé

2010-12-01

In this work, the hot electron injection models presently available for technology support have been investigated within the context of the development of advanced embedded non-volatile memories. The distribution functions obtained by these models (namely the Fiegna Model - FM [1], the Lucky Electron Model - LEM [2] and the recently implemented Spherical Harmonics Expansion of the Boltzman's Transport Equation - SHE [3]), have been systematically compared to rigorous Monte Carlo (MC) results [4], both in homogeneous and device conditions. Gate-to-drain current ratio and gate current density simulation has also been benchmarked in device simulations. Results indicate that local models such as FM, can partially capture the channel hot electron injection, at the price of model parameter adjustments. Moreover, at least in the device and field condition considered in this work, an overall better agreement with MC simulations has been obtained using the 1st order SHE, even without any particular fitting procedure. Extending the results presented in [3] by exploring shorter gate lengths and addressing the floating gate voltage dependence of the gate current, this work shows that the SHE method could contribute to bridge the gap between the rigorous but time consuming MC method and less rigorous but suitable TCAD local models.

Genetics Home Reference: Floating-Harbor syndrome

Science.gov (United States)

... Patton MA, Hurst J, Donnai D, McKeown CM, Cole T, Goodship J. Floating-Harbor syndrome. J Med ... medicine? What is newborn screening? New Pages Lyme disease Fibromyalgia White-Sutton syndrome All New & Updated Pages ...

Dynamic analysis of maritime gasbag-type floating bridge subjected to moving loads

Directory of Open Access Journals (Sweden)

Huan-huan Wang

2016-03-01

Full Text Available This paper studied the dynamic response of a new gasbag-type floating bridge under the effect of a moving load. The arbitrary Lagrangian-Eulerian (ALE method was used to simulate the movement of seawater and air, and the penalty-based method was used to study the coupling between gasbags and fluid. A three-dimensional finite element model of the floating bridge was established, and the numerical model was verified by comparing with the experimental results. In order to prevent resonance, the natural frequencies and flexural mode shapes were analyzed. Based on the initial state analysis, the dynamic responses of the floating bridge subjected to different moving loads were investigated. Vertical displacements and radial deformations of gasbags under different loads were compared, and principal stress distributions of gasbags were researched while driving. The hinge forces between adjacent modules were calculated to ensure the connection strength. Besides, the floating bridge under wave impacting was analyzed. Those results can provide references for the analysis and design of this new floating bridge.

Modeling of 4H—SiC multi-floating-junction Schottky barrier diode

International Nuclear Information System (INIS)

Hong-Bin, Pu; Lin, Cao; Zhi-Ming, Chen; Jie, Ren; Ya-Gong, Nan

2010-01-01

This paper develops a new and easy to implement analytical model for the specific on-resistance and electric field distribution along the critical path for 4H—SiC multi-floating junction Schottky barrier diode. Considering the charge compensation effects by the multilayer of buried opposite doped regions, it improves the breakdown voltage a lot in comparison with conventional one with the same on-resistance. The forward resistance of the floating junction Schottky barrier diode consists of several components and the electric field can be understood with superposition concept, both are consistent with MEDICI simulation results. Moreover, device parameters are optimized and the analyses show that in comparison with one layer floating junction, multilayer of floating junction layer is an effective way to increase the device performance when specific resistance and the breakdown voltage are traded off. The results show that the specific resistance increases 3.2 mΩ·cm 2 and breakdown voltage increases 422 V with an additional floating junction for the given structure. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Wake Influence on Dynamic Load Characteristics of Offshore Floating Wind Turbines

DEFF Research Database (Denmark)

Jeon, Minu; Lee, Soogab; Kim, Taeseong

2016-01-01

Because the flow conditions of an offshore floating wind turbine and onshore fixed wind turbine differ, it is debatable whether the aerodynamic load predictions of an offshore floating wind turbine using the conventional blade-element momentum theory, which does not consider the dynamic wake effe...

Lagrangian current measurements and large-scale long-term dispersion rates (Sofar float experiment)

International Nuclear Information System (INIS)

Gurbutt, F.A.

1984-01-01

Activity entering the water from a deep-sea disposal of radioactive waste package will be dispersed through the ocean both by the long-term circulation pattern and the eddy (mixing) motions. Sofar floats are thought to be the most cost-effective way of obtaining direct information on the circulation over a few years and the only way to obtain information, in the Lagrangian framework, on the statistics of the eddy movements. The Sofar float experiment seeks to answer questions including: (a) What is the magnitude of space and time variability of the horizontal eddy kinetic energy in the eastern bassin and is it consistent with that found in the western basin of the North Atlantic. (b) Is the deep flow inferred from incoherent arrays of moored current meters correct. The report covers the preparation stage for the Sofar float experiment whick takes place from autumn 1984 to 1986. It describes the recent results from the western North Atlantic, the design of the new deep Sofar float, the testing of the float including the range at which these new floats can be heard, the experimental design and expected results

On the proposed second law paradox in a nonzero floating potential

International Nuclear Information System (INIS)

Cruden, Brett A.

2001-01-01

A second law paradox was previously proposed for a plasma contained within an infinite blackbody. The proposed second law paradox was dependent on the plasma having a nonzero floating potential [D. P. Sheehan and J. D. Means, Phys. Plasmas 5, 2469 (1998)]. This work demonstrates that a nonzero floating potential is indicative of some energy contained within the plasma that can be withdrawn from the plasma without violation of the second law. Furthermore, it is shown from the probe theory that the plasma in this hypothetical configuration must have a floating potential of zero at steady state

Preparation and Characterization of a Gastric Floating Dosage Form of Capecitabine

Directory of Open Access Journals (Sweden)

Ehsan Taghizadeh Davoudi

2013-01-01

Full Text Available Gastrointestinal disturbances, such as nausea and vomiting, are considered amongst the main adverse effects associated with oral anticancer drugs due to their fast release in the gastrointestinal tract (GIT. Sustained release formulations with proper release profiles can overcome some side effects of conventional formulations. The current study was designed to prepare sustained release tablets of Capecitabine, which is approved by the Food and Drug Administration (FDA for the treatment of advanced breast cancer, using hydroxypropyl methylcellulose (HPMC, carbomer934P, sodium alginate, and sodium bicarbonate. Tablets were prepared using the wet granulation method and characterized such that floating lag time, total floating time, hardness, friability, drug content, weight uniformity, and in vitro drug release were investigated. The sustained release tablets showed good hardness and passed the friability test. The tablets’ floating lag time was determined to be 30–200 seconds, and it floated more than 24 hours and released the drug for 24 hours. Then, the stability test was done and compared with the initial samples. In conclusion, by adjusting the right ratios of the excipients including release-retarding gel-forming polymers like HPMC K4M, Na alginate, carbomer934P, and sodium bicarbonate, sustained release Capecitabine floating tablet was formulated.

Preparation and characterization of a gastric floating dosage form of capecitabine.

Science.gov (United States)

Taghizadeh Davoudi, Ehsan; Ibrahim Noordin, Mohamed; Kadivar, Ali; Kamalidehghan, Behnam; Farjam, Abdoreza Soleimani; Akbari Javar, Hamid

2013-01-01

Gastrointestinal disturbances, such as nausea and vomiting, are considered amongst the main adverse effects associated with oral anticancer drugs due to their fast release in the gastrointestinal tract (GIT). Sustained release formulations with proper release profiles can overcome some side effects of conventional formulations. The current study was designed to prepare sustained release tablets of Capecitabine, which is approved by the Food and Drug Administration (FDA) for the treatment of advanced breast cancer, using hydroxypropyl methylcellulose (HPMC), carbomer934P, sodium alginate, and sodium bicarbonate. Tablets were prepared using the wet granulation method and characterized such that floating lag time, total floating time, hardness, friability, drug content, weight uniformity, and in vitro drug release were investigated. The sustained release tablets showed good hardness and passed the friability test. The tablets' floating lag time was determined to be 30-200 seconds, and it floated more than 24 hours and released the drug for 24 hours. Then, the stability test was done and compared with the initial samples. In conclusion, by adjusting the right ratios of the excipients including release-retarding gel-forming polymers like HPMC K4M, Na alginate, carbomer934P, and sodium bicarbonate, sustained release Capecitabine floating tablet was formulated.

Self-gated fat-suppressed cardiac cine MRI.

Science.gov (United States)

Ingle, R Reeve; Santos, Juan M; Overall, William R; McConnell, Michael V; Hu, Bob S; Nishimura, Dwight G

2015-05-01

To develop a self-gated alternating repetition time balanced steady-state free precession (ATR-SSFP) pulse sequence for fat-suppressed cardiac cine imaging. Cardiac gating is computed retrospectively using acquired magnetic resonance self-gating data, enabling cine imaging without the need for electrocardiogram (ECG) gating. Modification of the slice-select rephasing gradients of an ATR-SSFP sequence enables the acquisition of a one-dimensional self-gating readout during the unused short repetition time (TR). Self-gating readouts are acquired during every TR of segmented, breath-held cardiac scans. A template-matching algorithm is designed to compute cardiac trigger points from the self-gating signals, and these trigger points are used for retrospective cine reconstruction. The proposed approach is compared with ECG-gated ATR-SSFP and balanced steady-state free precession in 10 volunteers and five patients. The difference of ECG and self-gating trigger times has a variability of 13 ± 11 ms (mean ± SD). Qualitative reviewer scoring and ranking indicate no statistically significant differences (P > 0.05) between self-gated and ECG-gated ATR-SSFP images. Quantitative blood-myocardial border sharpness is not significantly different among self-gated ATR-SSFP ( 0.61±0.15 mm -1), ECG-gated ATR-SSFP ( 0.61±0.15 mm -1), or conventional ECG-gated balanced steady-state free precession cine MRI ( 0.59±0.15 mm -1). The proposed self-gated ATR-SSFP sequence enables fat-suppressed cardiac cine imaging at 1.5 T without the need for ECG gating and without decreasing the imaging efficiency of ATR-SSFP. © 2014 Wiley Periodicals, Inc.

Research and development in fiscal 1999 of university collaboration type industrial and scientific technologies. Research and development of the next generation ferroelectric memory(Development of energy use rationalization technology); 1999 nendo jisedai kyoyudentai memory no kenkyu kaihatsu seika hokokusho. Energy shiyo gorika gijutsu kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-03-01

Research has been performed with an objective to develop a new circuit configuration that separates data read-out function from memory storage function. This paper summarizes the achievements in fiscal 1999. In developing a circuit simulation technology, the existing macro model was used to derive circuit response in a partially polarized condition. Comparing the hysteresis shape with an experiment revealed that the partially polarized condition can be expressed well. Incorporation into SPICE will be discussed in the future. In the research of optimizing the circuit configuration, an SrTa{sub 2}O{sub 6}/SiON buffer layer was used to have fabricated a ferroelectric gate FET being the constituting element of the memory cell. The function separation type 1T2C memory was discussed on aggregation, manufacturing processes, and optimal cell arrangement, and was concluded as a superior memory. It was disclosed that the high performance ferroelectric gate FET needs to take the FEMIS structure, and make the area of a ferroelectric capacitor smaller than the area of a buffer layer capacitor. (NEDO)

A hybrid ferroelectric-flash memory cells

Science.gov (United States)

Park, Jae Hyo; Byun, Chang Woo; Seok, Ki Hwan; Kim, Hyung Yoon; Chae, Hee Jae; Lee, Sol Kyu; Son, Se Wan; Ahn, Donghwan; Joo, Seung Ki

2014-09-01

A ferroelectric-flash (F-flash) memory cells having a metal-ferroelectric-nitride-oxynitride-silicon structure are demonstrated, and the ferroelectric materials were perovskite-dominated Pb(Zr,Ti)O3 (PZT) crystallized by Pt gate electrode. The PZT thin-film as a blocking layer improves electrical and memorial performance where programming and erasing mechanism are different from the metal-ferroelectric-insulator-semiconductor device or the conventional silicon-oxide-nitride-oxide-silicon device. F-flash cells exhibit not only the excellent electrical transistor performance, having 442.7 cm2 V-1 s-1 of field-effect mobility, 190 mV dec-1 of substhreshold slope, and 8 × 105 on/off drain current ratio, but also a high reliable memory characteristics, having a large memory window (6.5 V), low-operating voltage (0 to -5 V), faster P/E switching speed (50/500 μs), long retention time (>10 years), and excellent fatigue P/E cycle (>105) due to the boosting effect, amplification effect, and energy band distortion of nitride from the large polarization. All these characteristics correspond to the best performances among conventional flash cells reported so far.

Control electronic platform based on floating-point DSP and FPGA for a NPC multilevel back-to-back converter

Energy Technology Data Exchange (ETDEWEB)

Rodriguez, Francisco J.; Cobreces, Santiago; Bueno, Emilio J.; Hernandez, Alvaro; Mateos, Raul; Espinosa, Felipe [Department of Electronics, University of Alcala, Alcala de Henares, Madrid (Spain)

2008-09-15

Modern energy concepts as Distributed Power Generation are changing the appearance of electric distribution and transmission and challenging power electronics researchers, which try to develop new solutions of electronic controllers. The aim is to enable the implementation of new and more complex control algorithms to verify the last standards related to the grid energy quality for new power converters, and, also, for equipments which nowadays are operating. This paper presents the design, implementation and test of a novel real-time controller for a Neutral Point Clamped (NPC) (three-level) multilevel converter based on a floating-point Digital Signal Processor (DSP) and on a Field-Programmable Gate Array (FPGA), by operating in a cooperative way. Although the proposed system can be readily applied to any power electronic application, in this work, it is focused on the next system: a 150 kVA back-to-back three-level NPC Voltage Source Converter (VSC) for wind power applications. (author)

Selective updating of working memory content modulates meso-cortico-striatal activity.

Science.gov (United States)

Murty, Vishnu P; Sambataro, Fabio; Radulescu, Eugenia; Altamura, Mario; Iudicello, Jennifer; Zoltick, Bradley; Weinberger, Daniel R; Goldberg, Terry E; Mattay, Venkata S

2011-08-01

Accumulating evidence from non-human primates and computational modeling suggests that dopaminergic signals arising from the midbrain (substantia nigra/ventral tegmental area) mediate striatal gating of the prefrontal cortex during the selective updating of working memory. Using event-related functional magnetic resonance imaging, we explored the neural mechanisms underlying the selective updating of information stored in working memory. Participants were scanned during a novel working memory task that parses the neurophysiology underlying working memory maintenance, overwriting, and selective updating. Analyses revealed a functionally coupled network consisting of a midbrain region encompassing the substantia nigra/ventral tegmental area, caudate, and dorsolateral prefrontal cortex that was selectively engaged during working memory updating compared to the overwriting and maintenance of working memory content. Further analysis revealed differential midbrain-dorsolateral prefrontal interactions during selective updating between low-performing and high-performing individuals. These findings highlight the role of this meso-cortico-striatal circuitry during the selective updating of working memory in humans, which complements previous research in behavioral neuroscience and computational modeling. Published by Elsevier Inc.

Motion Performance and Mooring System of a Floating Offshore Wind Turbine

Institute of Scientific and Technical Information of China (English)

Jing Zhao; Liang Zhang; Haitao Wu

2012-01-01

The development of offshore wind farms was originally carried out in shallow water areas with fixed (seabed mounted) structures.However,countries with limited shallow water areas require innovative floating platforms to deploy wind turbines offshore in order to harness wind energy to generate electricity in deep seas.The performances of motion and mooring system dynamics are vital to designing a cost effective and durable floating platform.This paper describes a numerical model to simulate dynamic behavior of a new semi-submersible type floating offshore wind turbine (FOWT) system.The wind turbine was modeled as a wind block with a certain thrust coefficient,and the hydrodynamics and mooring system dynamics of the platform were calculated by SESAM software.The effect of change in environmental conditions on the dynamic response of the system under wave and wind loading was examined.The results indicate that the semi-submersible concept has excellent performance and SESAM could be an effective tool for floating wind turbine design and analysis.

Motion performance and mooring system of a floating offshore wind turbine

Science.gov (United States)

Zhao, Jing; Zhang, Liang; Wu, Haitao

2012-09-01

The development of offshore wind farms was originally carried out in shallow water areas with fixed (seabed mounted) structures. However, countries with limited shallow water areas require innovative floating platforms to deploy wind turbines offshore in order to harness wind energy to generate electricity in deep seas. The performances of motion and mooring system dynamics are vital to designing a cost effective and durable floating platform. This paper describes a numerical model to simulate dynamic behavior of a new semi-submersible type floating offshore wind turbine (FOWT) system. The wind turbine was modeled as a wind block with a certain thrust coefficient, and the hydrodynamics and mooring system dynamics of the platform were calculated by SESAM software. The effect of change in environmental conditions on the dynamic response of the system under wave and wind loading was examined. The results indicate that the semi-submersible concept has excellent performance and SESAM could be an effective tool for floating wind turbine design and analysis.

Conditional Dispersive Readout of a CMOS Single-Electron Memory Cell

Science.gov (United States)

Schaal, S.; Barraud, S.; Morton, J. J. L.; Gonzalez-Zalba, M. F.

2018-05-01

Quantum computers require interfaces with classical electronics for efficient qubit control, measurement, and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will facilitate the integration process, improving feedback speeds and offering potential solutions to wiring and layout challenges. Integrating classical and quantum devices monolithically, using complementary metal-oxide-semiconductor (CMOS) processes, enables the processor to profit from the most mature industrial technology for the fabrication of large-scale circuits. We demonstrate a CMOS single-electron memory cell composed of a single quantum dot and a transistor that locks charge on the quantum-dot gate. The single-electron memory cell is conditionally read out by gate-based dispersive sensing using a lumped-element L C resonator. The control field-effect transistor (FET) and quantum dot are fabricated on the same chip using fully depleted silicon-on-insulator technology. We obtain a charge sensitivity of δ q =95 ×10-6e Hz-1 /2 when the quantum-dot readout is enabled by the control FET, comparable to results without the control FET. Additionally, we observe a single-electron retention time on the order of a second when storing a single-electron charge on the quantum dot at millikelvin temperatures. These results demonstrate first steps towards time-based multiplexing of gate-based dispersive readout in CMOS quantum devices opening the path for the development of an all-silicon quantum-classical processor.

Low band-to-band tunnelling and gate tunnelling current in novel nanoscale double-gate architecture: simulations and investigation

International Nuclear Information System (INIS)

Datta, Deepanjan; Ganguly, Samiran; Dasgupta, S

2007-01-01

Large band-to-band tunnelling (BTBT) and gate leakage current can limit scalability of nanoscale devices. In this paper, we have proposed a novel nanoscale parallel connected heteromaterial double gate (PCHEM-DG) architecture with triple metal gate which significantly suppress BTBT leakage, making it efficient for low power design in the sub-10 nm regime. We have also proposed a triple gate device with p + poly-n + poly-p + poly gate which has substantially low gate leakage over symmetric DG MOSFET. Simulations are performed using a 2D Poisson-Schroedinger simulator and verified with a 2D device simulator ATLAS. We conclude that, due to intrinsic body doping, negligible gate leakage, suppressed BTBT over symmetric DG devices, metal gate (MG) PCHEM-DG MOSFET is efficient for low power circuit design in the nanometre regime

Water Pressure Distribution on a Twin-Float Seaplane

Science.gov (United States)

Thompson, F L

1930-01-01

This is the second of a series of investigations to determine water pressure distribution on various types of seaplane floats and hulls, and was conducted on a twin-float seaplane. It consisted of measuring water pressures and accelerations on a TS-1 seaplane during numerous landing and taxiing maneuvers at various speeds and angles. The results show that water pressures as great as 10 lbs. per sq. in.may occur at the step in various maneuvers and that pressures of approximately the same magnitude occur at the stern and near the bow in hard pancake landings with the stern way down. At the other parts of the float the pressures are less and are usually zero or slightly negative for some distance abaft the step. A maximum negative pressure of 0.87 lb. Per square inch was measured immediately abaft the step. The maximum positive pressures have a duration of approximately one-twentieth to one-hundredth second at any given location and are distributed over a very limited area at any particular instant.

Visualization of neonatal coronary arteries on multidetector row CT: ECG-gated versus non-ECG-gated technique

International Nuclear Information System (INIS)

Tsai, I.C.; Lee, Tain; Chen, Min-Chi; Fu, Yun-Ching; Jan, Sheng-Lin; Wang, Chung-Chi; Chang, Yen

2007-01-01

Multidetector CT (MDCT) seems to be a promising tool for detection of neonatal coronary arteries, but whether the ECG-gated or non-ECG-gated technique should be used has not been established. To compare the detection rate and image quality of neonatal coronary arteries on MDCT using ECG-gated and non-ECG-gated techniques. Twelve neonates with complex congenital heart disease were included. The CT scan was acquired using an ECG-gated technique, and the most quiescent phase of the RR interval was selected to represent the ECG-gated images. The raw data were then reconstructed without the ECG signal to obtain non-ECG-gated images. The detection rate and image quality of nine coronary artery segments in the two sets of images were then compared. A two-tailed paired t test was used with P values <0.05 considered as statistically significant. In all coronary segments the ECG-gated technique had a better detection rate and produced images of better quality. The difference between the two techniques ranged from 25% in the left main coronary artery to 100% in the distal right coronary artery. For neonates referred for MDCT, if evaluation of coronary artery anatomy is important for the clinical management or surgical planning, the ECG-gated technique should be used because it can reliably detect the coronary arteries. (orig.)

Effects of thickness and geometric variations in the oxide gate stack on the nonvolatile memory behaviors of charge-trap memory thin-film transistors

Science.gov (United States)

Bak, Jun Yong; Kim, So-Jung; Byun, Chun-Won; Pi, Jae-Eun; Ryu, Min-Ki; Hwang, Chi Sun; Yoon, Sung-Min

2015-09-01

Device designs of charge-trap oxide memory thin-film transistors (CTM-TFTs) were investigated to enhance their nonvolatile memory performances. The first strategy was to optimize the film thicknesses of the tunneling and charge-trap (CT) layers in order to meet requirements of both higher operation speed and longer retention time. While the program speed and memory window were improved for the device with a thinner tunneling layer, a long retention time was obtained only for the device with a tunneling layer thicker than 5 nm. The carrier concentration and charge-trap densities were optimized in the 30-nm-thick CT layer. It was observed that 10-nm-thick tunneling, 30-nm-thick CT, and 50-nm-thick blocking layers were the best configuration for our proposed CTM-TFTs, where a memory on/off margin higher than 107 was obtained, and a memory margin of 6.6 × 103 was retained even after the lapse of 105 s. The second strategy was to examine the effects of the geometrical relations between the CT and active layers for the applications of memory elements embedded in circuitries. The CTM-TFTs fabricated without an overlap between the CT layer and the drain electrode showed an enhanced program speed by the reduced parasitic capacitance. The drain-bias disturbance for the memory off-state was effectively suppressed even when a higher read-out drain voltage was applied. Appropriate device design parameters, such as the film thicknesses of each component layer and the geometrical relations between them, can improve the memory performances and expand the application fields of the proposed CTM-TFTs.

FLOAT - development of new flexible UHPC. Final report. [Ultra High Performance Fibre Reinforced Concrete

Energy Technology Data Exchange (ETDEWEB)

NONE

2012-11-01

The current project is a preliminary study intended to clarify the background and give a better basis for an evaluation of the risks and possible rewards of funding a full project with the overall purpose of developing and testing a new concept for wave energy floaters, made of Ultra High Performance Fibre Reinforced Concrete (UHPC), as an enabling technology for the establishment of competitive wave energy production (FLOAT). As an initial step for this preliminary study of FLOAT an investigation has been undertaken in relation to preliminary design of 2 types of floaters, essential properties of UHPFRC - and identification of necessary developments, compilation of existing data from off shore applications and analysis of effect on Cost Of Energy. Preliminary float design and economical considerations - is a theoretical and numerical study including preliminary float designs and cost estimates. It aims at making a first comparison between the different materials options for DEXA and Wave Star floats and giving a first judgement about the suitability of CRC concrete. This is done through a qualitative assessment of pros and cons of different materials for both types of floats and a design study of the Dexa Wave float. It is concluded that the requirements for the Dexa Wave float are so that CRC is not able to compete with conventional concrete for the best and most cost effective solution. The good durability (leading to low maintenance costs), the mechanical properties and the ductility of CRC are not important enough to offset the increased cost for this float. For Wave Star on the other hand, there are significant advantages in using CRC as the only other option in this case is fibre glass, which is a much more expensive product. An investigation was made of methods of optimizing the properties of CRC - customizing them for particular applications in WEC's. The method of optimization has been to change the types of fibres in the mix, and it is demonstrated

A VLSI recurrent network of integrate-and-fire neurons connected by plastic synapses with long-term memory.

Science.gov (United States)

Chicca, E; Badoni, D; Dante, V; D'Andreagiovanni, M; Salina, G; Carota, L; Fusi, S; Del Giudice, P

2003-01-01

Electronic neuromorphic devices with on-chip, on-line learning should be able to modify quickly the synaptic couplings to acquire information about new patterns to be stored (synaptic plasticity) and, at the same time, preserve this information on very long time scales (synaptic stability). Here, we illustrate the electronic implementation of a simple solution to this stability-plasticity problem, recently proposed and studied in various contexts. It is based on the observation that reducing the analog depth of the synapses to the extreme (bistable synapses) does not necessarily disrupt the performance of the device as an associative memory, provided that 1) the number of neurons is large enough; 2) the transitions between stable synaptic states are stochastic; and 3) learning is slow. The drastic reduction of the analog depth of the synaptic variable also makes this solution appealing from the point of view of electronic implementation and offers a simple methodological alternative to the technological solution based on floating gates. We describe the full custom analog very large-scale integration (VLSI) realization of a small network of integrate-and-fire neurons connected by bistable deterministic plastic synapses which can implement the idea of stochastic learning. In the absence of stimuli, the memory is preserved indefinitely. During the stimulation the synapse undergoes quick temporary changes through the activities of the pre- and postsynaptic neurons; those changes stochastically result in a long-term modification of the synaptic efficacy. The intentionally disordered pattern of connectivity allows the system to generate a randomness suited to drive the stochastic selection mechanism. We check by a suitable stimulation protocol that the stochastic synaptic plasticity produces the expected pattern of potentiation and depression in the electronic network.

Mathematical modeling of large floating roof reservoir temperature arena

Directory of Open Access Journals (Sweden)

Liu Yang

2018-03-01

Full Text Available The current study is a simplification of related components of large floating roof tank and modeling for three dimensional temperature field of large floating roof tank. The heat transfer involves its transfer between the hot fluid in the oil tank, between the hot fluid and the tank wall and between the tank wall and the external environment. The mathematical model of heat transfer and flow of oil in the tank simulates the temperature field of oil in tank. Oil temperature field of large floating roof tank is obtained by numerical simulation, map the curve of central temperature dynamics with time and analyze axial and radial temperature of storage tank. It determines the distribution of low temperature storage tank location based on the thickness of the reservoir temperature. Finally, it compared the calculated results and the field test data; eventually validated the calculated results based on the experimental results.

High-Density Stacked Ru Nanocrystals for Nonvolatile Memory Application

International Nuclear Information System (INIS)

Ping, Mao; Zhi-Gang, Zhang; Li-Yang, Pan; Jun, Xu; Pei-Yi, Chen

2009-01-01

Stacked ruthenium (Ru) nanocrystals (NCs) are formed by rapid thermal annealing for the whole gate stacks and embedded in memory structure, which is compatible with conventional CMOS technology. Ru NCs with high density (3 × 10 12 cm −2 ), small size (2–4 nm) and good uniformity both in aerial distribution and morphology are formed. Attributed to the higher surface trap density, a memory window of 5.2 V is obtained with stacked Ru NCs in comparison to that of 3.5 V with single-layer samples. The stacked Ru NCs device also exhibits much better retention performance because of Coulomb blockade and vertical uniformity between stacked Ru NCs

Modeling spatial-temporal operations with context-dependent associative memories.

Science.gov (United States)