Electrical and optical characteristics of heterojunction devices composed of silicon nanowires and mercury selenide nanoparticle films on flexible plastics.

Science.gov (United States)

Yeo, Minje; Yun, Junggwon; Kim, Sangsig

2013-09-01

A pn heterojunction device based on p-type silicon (Si) nanowires (NWs) prepared by top-down method and n-type mercury selenide (HgSe) nanoparticles (NPs) synthesized by the colloidal method have been fabricated on a flexible plastic substrate. The synthesized HgSe NPs were analyzed through the effective mass approximation. The characteristics of the heterojunction device were examined and studied with the energy band diagram. The device showed typical diode characteristics with a turn-on voltage of 1.5 V and exhibited a high rectification ratio of 10(3) under relatively low forward bias. Under illumination of 633-nm-wavelength light, the device presented photocurrent efficiency of 117.5 and 20.1 nA/W under forward bias and reverse bias conditions, respectively. Moreover, the photocurrent characteristics of the device have been determined by bending of the plastic substrate upward and downward with strain of 0.8%. Even though the photocurrent efficiency has fluctuations during the bending cycles, the values are roughly maintained for 10(4) bending cycles. This result indicates that the fabricated heterojunction device has the potential to be applied as fundamental elements of flexible nanoelectronics.

Nanowire structures and electrical devices

Science.gov (United States)

Bezryadin, Alexey; Remeika, Mikas

2010-07-06

The present invention provides structures and devices comprising conductive segments and conductance constricting segments of a nanowire, such as metallic, superconducting or semiconducting nanowire. The present invention provides structures and devices comprising conductive nanowire segments and conductance constricting nanowire segments having accurately selected phases including crystalline and amorphous states, compositions, morphologies and physical dimensions, including selected cross sectional dimensions, shapes and lengths along the length of a nanowire. Further, the present invention provides methods of processing nanowires capable of patterning a nanowire to form a plurality of conductance constricting segments having selected positions along the length of a nanowire, including conductance constricting segments having reduced cross sectional dimensions and conductance constricting segments comprising one or more insulating materials such as metal oxides.

Printing nanotube/nanowire for flexible microsystems

Science.gov (United States)

Tortorich, Ryan P.; Choi, Jin-Woo

2014-04-01

Printing has become an emerging manufacturing technology for mechanics, electronics, and consumer products. Additionally, both nanotubes and nanowires have recently been used as materials for sensors and electrodes due to their unique electrical and mechanical properties. Printed electrodes and conductive traces particularly offer versatility of fabricating low-cost, disposable, and flexible electrical devices and microsystems. While various printing methods such as screen printing have been conventional methods for printing conductive traces and electrodes, inkjet printing has recently attracted great attention due to its unique advantages including no template requirement, rapid printing at low cost, on-demand printing capability, and precise control of the printed material. Computer generated conductive traces or electrode patterns can simply be printed on a thin film substrate with proper conductive ink consisting of nanotubes or nanowires. However, in order to develop nanotube or nanowire ink, there are a few challenges that need to be addressed. The most difficult obstacle to overcome is that of nanotube/nanowire dispersion within a solution. Other challenges include adjusting surface tension and controlling viscosity of the ink as well as treating the surface of the printing substrate. In an attempt to pave the way for nanomaterial inkjet printing, we present a method for preparing carbon nanotube ink as well as its printing technique. A fully printed electrochemical sensor using inkjet-printed carbon nanotube electrodes is also demonstrated as an example of the possibilities for this technology.

Optimization of flexible substrate by gradient elastic modulus design for performance improvement of flexible electronic devices

Science.gov (United States)

Xia, Minggang; Liang, Chunping; Hu, Ruixue; Cheng, Zhaofang; Liu, Shiru; Zhang, Shengli

2018-05-01

It is imperative and highly desirable to buffer the stress in flexible electronic devices. In this study, we designed and fabricated lamellate poly(dimethylsiloxane) (PDMS) samples with gradient elastic moduli, motivated by the protection of the pomelo pulp by its skin, followed by the measurements of their elastic moduli. We demonstrated that the electrical and fatigue performances of a Ag-nanowire thin film device on the PDMS substrate with a gradient elastic modulus are significantly better than those of a device on a substrate with a monolayer PDMS. This study provides a robust scheme to effectively protect flexible electronic devices.

Flexible nonvolatile memory devices based on Au/PMMA nanocomposites deposited on PEDOT:PSS/Ag nanowire hybrid electrodes

International Nuclear Information System (INIS)

Sung, Sihyun; Kim, Tae Whan

2017-01-01

Highlights: • Flexible nonvolatile memory (NVM) devices fabricated utilizing Au nanoparticles (AuNPs) embedded in a PMMA layer were fabricated. • The insertion of the PEDOT:PSS layer enhanced the surface uniformity of the AgNW bottom electrode, resulting in improved device performances. • Current-voltage curves for the Al/PMMA:AuNP/PEDOT:PSS/AgNW/PET devices showed clockwise current hysteresis behaviors. • ON/OFF ratio of 1 × 10 3 was maintained for retention times longer than 1 × 10 4 s. • Memory characteristics of the NVM devices before and after bending were similar. - Abstract: Flexible nonvolatile memory (NVM) devices fabricated utilizing Au nanoparticles (AuNPs) embedded in a poly(methylmethacrylate) (PMMA) layer were fabricated on a silver nanowire (AgNW) or a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/AgNW coated on poly(ethylene terephthalate) (PET) substrates. The transmittance and the sheet resistance of the PEDOT:PSS/AgNW hybrid layer were approximately 89% and 50 Ω/sq, respectively, which were comparable to the values for commercial indium-tin-oxide (ITO) electrodes. Current-voltage curves for the Al/PMMA:AuNP/PEDOT:PSS/AgNW/PET devices at 300 K showed clockwise current hysteresis behaviors due to the existence of the AuNPs. The endurance number of ON/OFF switching for the NVM devices was above 30 cycles. An ON/OFF ratio of 1 × 10 3 was maintained for retention times longer than 1 × 10 4 s. The maximum memory margins of the NVM devices before and after bending were approximately 3.4 × 10 3 and 1.4 × 10 3 , respectively. The retention times of the devices before and after bending remained same 1 × 10 4 s. The memory margin and the stability of flexible NVMs fabricated on AgNW electrodes were enhanced due to the embedded PEDOT:PSS buffer layer.

Flexible nonvolatile memory devices based on Au/PMMA nanocomposites deposited on PEDOT:PSS/Ag nanowire hybrid electrodes

Energy Technology Data Exchange (ETDEWEB)

Sung, Sihyun; Kim, Tae Whan, E-mail: twk@hanyang.ac.kr

2017-07-31

Highlights: • Flexible nonvolatile memory (NVM) devices fabricated utilizing Au nanoparticles (AuNPs) embedded in a PMMA layer were fabricated. • The insertion of the PEDOT:PSS layer enhanced the surface uniformity of the AgNW bottom electrode, resulting in improved device performances. • Current-voltage curves for the Al/PMMA:AuNP/PEDOT:PSS/AgNW/PET devices showed clockwise current hysteresis behaviors. • ON/OFF ratio of 1 × 10{sup 3} was maintained for retention times longer than 1 × 10{sup 4} s. • Memory characteristics of the NVM devices before and after bending were similar. - Abstract: Flexible nonvolatile memory (NVM) devices fabricated utilizing Au nanoparticles (AuNPs) embedded in a poly(methylmethacrylate) (PMMA) layer were fabricated on a silver nanowire (AgNW) or a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/AgNW coated on poly(ethylene terephthalate) (PET) substrates. The transmittance and the sheet resistance of the PEDOT:PSS/AgNW hybrid layer were approximately 89% and 50 Ω/sq, respectively, which were comparable to the values for commercial indium-tin-oxide (ITO) electrodes. Current-voltage curves for the Al/PMMA:AuNP/PEDOT:PSS/AgNW/PET devices at 300 K showed clockwise current hysteresis behaviors due to the existence of the AuNPs. The endurance number of ON/OFF switching for the NVM devices was above 30 cycles. An ON/OFF ratio of 1 × 10{sup 3} was maintained for retention times longer than 1 × 10{sup 4} s. The maximum memory margins of the NVM devices before and after bending were approximately 3.4 × 10{sup 3} and 1.4 × 10{sup 3}, respectively. The retention times of the devices before and after bending remained same 1 × 10{sup 4} s. The memory margin and the stability of flexible NVMs fabricated on AgNW electrodes were enhanced due to the embedded PEDOT:PSS buffer layer.

Flexible ultraviolet photodetectors based on ZnO-SnO2 heterojunction nanowire arrays

Science.gov (United States)

Lou, Zheng; Yang, Xiaoli; Chen, Haoran; Liang, Zhongzhu

2018-02-01

A ZnO-SnO2 nanowires (NWs) array, as a metal oxide semiconductor, was successfully synthesized by a near-field electrospinning method for the applications as high performance ultraviolet photodetectors. Ultraviolet photodetectors based on a single nanowire exhibited excellent photoresponse properties to 300 nm ultraviolet light illumination including ultrahigh I on/I off ratios (up to 103), good stability and reproducibility because of the separation between photo-generated electron-hole pairs. Moreover, the NWs array shows an enhanced photosensing performance. Flexible photodetectors on the PI substrates with similar tendency properties were also fabricated. In addition, under various bending curvatures and cycles, the as-fabricated flexible photodetectors revealed mechanical flexibility and good stable electrical properties, showing that they have the potential for applications in future flexible photoelectron devices. Project supported by the National Science Foundation of China (No. 61504136) and the State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine and Physics, Chinese Academy of Sciences.

High performance field emission of silicon carbide nanowires and their applications in flexible field emission displays

Science.gov (United States)

Cui, Yunkang; Chen, Jing; Di, Yunsong; Zhang, Xiaobing; Lei, Wei

2017-12-01

In this paper, a facile method to fabricate the flexible field emission devices (FEDs) based on SiC nanostructure emitters by a thermal evaporation method has been demonstrated. The composition characteristics of SiC nanowires was characterized by X-ray diffraction (XRD), selected area electron diffraction (SAED) and energy dispersive X-ray spectrometer (EDX), while the morphology was revealed by field emission scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The results showed that the SiC nanowires grew along the [111] direction with the diameter of ˜110 nm and length of˜30 μm. The flexible FEDs have been fabricated by transferring and screen-printing the SiC nanowires onto the flexible substrates exhibited excellent field emission properties, such as the low turn-on field (˜0.95 V/μm) and threshold field (˜3.26 V/μm), and the high field enhancement factor (β=4670). It is worth noting the current density degradation can be controlled lower than 2% per hour during the stability tests. In addition, the flexible FEDs based on SiC nanowire emitters exhibit uniform bright emission modes under bending test conditions. As a result, this strategy is very useful for its potential application in the commercial flexible FEDs.

High performance field emission of silicon carbide nanowires and their applications in flexible field emission displays

Directory of Open Access Journals (Sweden)

Yunkang Cui

2017-12-01

Full Text Available In this paper, a facile method to fabricate the flexible field emission devices (FEDs based on SiC nanostructure emitters by a thermal evaporation method has been demonstrated. The composition characteristics of SiC nanowires was characterized by X-ray diffraction (XRD, selected area electron diffraction (SAED and energy dispersive X-ray spectrometer (EDX, while the morphology was revealed by field emission scanning electron microscopy (SEM and high resolution transmission electron microscopy (HRTEM. The results showed that the SiC nanowires grew along the [111] direction with the diameter of ∼110 nm and length of∼30 μm. The flexible FEDs have been fabricated by transferring and screen-printing the SiC nanowires onto the flexible substrates exhibited excellent field emission properties, such as the low turn-on field (∼0.95 V/μm and threshold field (∼3.26 V/μm, and the high field enhancement factor (β=4670. It is worth noting the current density degradation can be controlled lower than 2% per hour during the stability tests. In addition, the flexible FEDs based on SiC nanowire emitters exhibit uniform bright emission modes under bending test conditions. As a result, this strategy is very useful for its potential application in the commercial flexible FEDs.

Electrohydrodynamic printing of silver nanowires for flexible and stretchable electronics.

Science.gov (United States)

Cui, Zheng; Han, Yiwei; Huang, Qijin; Dong, Jingyan; Zhu, Yong

2018-04-19

A silver nanowire (AgNW) based conductor is a promising component for flexible and stretchable electronics. A wide range of flexible/stretchable devices using AgNW conductors has been demonstrated recently. High-resolution, high-throughput printing of AgNWs remains a critical challenge. Electrohydrodynamic (EHD) printing has been developed as a promising technique to print different materials on a variety of substrates with high resolution. Here, AgNW ink was developed for EHD printing. The printed features can be controlled by several parameters including AgNW concentration, ink viscosity, printing speed, stand-off distance, etc. With this method, AgNW patterns can be printed on a range of substrates, e.g. paper, polyethylene terephthalate (PET), glass, polydimethylsiloxane (PDMS), etc. First, AgNW samples on PDMS were characterized under bending and stretching. Then AgNW heaters and electrocardiogram (ECG) electrodes were fabricated to demonstrate the potential of this printing technique for AgNW-based flexible and stretchable devices.

Transparent Electrodes Based on Silver Nanowire Networks: From Physical Considerations towards Device Integration.

Science.gov (United States)

Bellet, Daniel; Lagrange, Mélanie; Sannicolo, Thomas; Aghazadehchors, Sara; Nguyen, Viet Huong; Langley, Daniel P; Muñoz-Rojas, David; Jiménez, Carmen; Bréchet, Yves; Nguyen, Ngoc Duy

2017-05-24

The past few years have seen a considerable amount of research devoted to nanostructured transparent conducting materials (TCM), which play a pivotal role in many modern devices such as solar cells, flexible light-emitting devices, touch screens, electromagnetic devices, and flexible transparent thin film heaters. Currently, the most commonly used TCM for such applications (ITO: Indium Tin oxide) suffers from two major drawbacks: brittleness and indium scarcity. Among emerging transparent electrodes, silver nanowire (AgNW) networks appear to be a promising substitute to ITO since such electrically percolating networks exhibit excellent properties with sheet resistance lower than 10 Ω/sq and optical transparency of 90%, fulfilling the requirements of most applications. In addition, AgNW networks also exhibit very good mechanical flexibility. The fabrication of these electrodes involves low-temperature processing steps and scalable methods, thus making them appropriate for future use as low-cost transparent electrodes in flexible electronic devices. This contribution aims to briefly present the main properties of AgNW based transparent electrodes as well as some considerations relating to their efficient integration in devices. The influence of network density, nanowire sizes, and post treatments on the properties of AgNW networks will also be evaluated. In addition to a general overview of AgNW networks, we focus on two important aspects: (i) network instabilities as well as an efficient Atomic Layer Deposition (ALD) coating which clearly enhances AgNW network stability and (ii) modelling to better understand the physical properties of these networks.

Polyaniline nanowire arrays aligned on nitrogen-doped carbon fabric for high-performance flexible supercapacitors.

Science.gov (United States)

Yu, Pingping; Li, Yingzhi; Yu, Xinyi; Zhao, Xin; Wu, Lihao; Zhang, Qinghua

2013-09-24

A combination of vertical polyaniline (PANI) nanowire arrays and nitrogen plasma etched carbon fiber cloths (eCFC) was fabricated to create 3D nanostructured PANI/eCFC composites. The small size of the highly ordered PANI nanowires can greatly reduce the scale of the diffusion length, allowing for the improved utilization of electrode materials. A two-electrode flexible supercapacitor based on PANI/eCFC demonstrates a high specific capacitance (1035 F g(-1) at a current density of 1 A g(-1)), good rate capability (88% capacity retention at 8 A g(-1)), and long-term cycle life (10% capacity loss after 5000 cycles). The lightweight, low-cost, flexible composites are promising candidates for use in energy storage device applications.

Improvements in purification of silver nanowires by decantation and fabrication of flexible transparent electrodes. Application to capacitive touch sensors

International Nuclear Information System (INIS)

Mayousse, Céline; Celle, Caroline; Moreau, Eléonore; Carella, Alexandre; Simonato, Jean-Pierre; Mainguet, Jean-François

2013-01-01

Transparent flexible electrodes made of metallic nanowires, and in particular silver nanowires (AgNWs), appear as an extremely promising alternative to transparent conductive oxides for future optoelectronic devices. Though significant progresses have been made the last few years, there is still some room for improvement regarding the synthesis of high quality silver nanowire solutions and fabrication process of high performance electrodes. We show that the commonly used purification process can be greatly simplified through decantation. Using this process it is possible to fabricate flexible electrodes by spray coating with sheet resistance lower than 25 Ω sq −1 at 90% transparency in the visible spectrum. These electrodes were used to fabricate an operative transparent flexible touch screen. To our knowledge this is the first reported AgNW based touch sensor relying on capacitive technology. (paper)

Vertically building Zn2SnO4 nanowire arrays on stainless steel mesh toward fabrication of large-area, flexible dye-sensitized solar cells.

Science.gov (United States)

Li, Zhengdao; Zhou, Yong; Bao, Chunxiong; Xue, Guogang; Zhang, Jiyuan; Liu, Jianguo; Yu, Tao; Zou, Zhigang

2012-06-07

Zn(2)SnO(4) nanowire arrays were for the first time grown onto a stainless steel mesh (SSM) in a binary ethylenediamine (En)/water solvent system using a solvothermal route. The morphology evolution following this reaction was carefully followed to understand the formation mechanism. The SSM-supported Zn(2)SnO(4) nanowire was utilized as a photoanode for fabrication of large-area (10 cm × 5 cm size as a typical sample), flexible dye-sensitized solar cells (DSSCs). The synthesized Zn(2)SnO(4) nanowires exhibit great bendability and flexibility, proving potential advantage over other metal oxide nanowires such as TiO(2), ZnO, and SnO(2) for application in flexible solar cells. Relative to the analogous Zn(2)SnO(4) nanoparticle-based flexible DSSCs, the nanowire geometry proves to enhance solar energy conversion efficiency through enhancement of electron transport. The bendable nature of the DSSCs without obvious degradation of efficiency and facile scale up gives the as-made flexible solar cell device potential for practical application.

Epitaxy of advanced nanowire quantum devices

Science.gov (United States)

Gazibegovic, Sasa; Car, Diana; Zhang, Hao; Balk, Stijn C.; Logan, John A.; de Moor, Michiel W. A.; Cassidy, Maja C.; Schmits, Rudi; Xu, Di; Wang, Guanzhong; Krogstrup, Peter; Op Het Veld, Roy L. M.; Zuo, Kun; Vos, Yoram; Shen, Jie; Bouman, Daniël; Shojaei, Borzoyeh; Pennachio, Daniel; Lee, Joon Sue; van Veldhoven, Petrus J.; Koelling, Sebastian; Verheijen, Marcel A.; Kouwenhoven, Leo P.; Palmstrøm, Chris J.; Bakkers, Erik P. A. M.

2017-08-01

Semiconductor nanowires are ideal for realizing various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasiparticles (such as anyons) can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought into contact with a superconductor. To exploit the potential of non-Abelian anyons—which are key elements of topological quantum computing—fully, they need to be exchanged in a well-controlled braiding operation. Essential hardware for braiding is a network of crystalline nanowires coupled to superconducting islands. Here we demonstrate a technique for generic bottom-up synthesis of complex quantum devices with a special focus on nanowire networks with a predefined number of superconducting islands. Structural analysis confirms the high crystalline quality of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface. Quantum transport measurements of nanowire ‘hashtags’ reveal Aharonov-Bohm and weak-antilocalization effects, indicating a phase-coherent system with strong spin-orbit coupling. In addition, a proximity-induced hard superconducting gap (with vanishing sub-gap conductance) is demonstrated in these hybrid superconductor-semiconductor nanowires, highlighting the successful materials development necessary for a first braiding experiment. Our approach opens up new avenues for the realization of epitaxial three-dimensional quantum architectures which have the potential to become key components of various quantum devices.

Extremely flexible, transparent, and strain-sensitive electroluminescent device based on ZnS:Cu-polyvinyl butyral composite and silver nanowires

Science.gov (United States)

Jun, Sungwoo; Kim, Youngmin; Ju, Byeong-Kwon; Kim, Jong-Woong

2018-01-01

A multifunctional alternate current electroluminescent device (ACEL) was achieved by compositing ZnS:Cu particles in polyvinyl butyral (PVB) with two layers of percolated silver nanowire (AgNW) electrodes. The strong hydrogen bonding interactions and entanglement of PVB chains considerably strengthened the PVB, and thus, the cured mixture of ZnS:Cu particles and freestanding PVB required no additional support. The device was fabricated by embedding AgNWs on both sides of the ZnS:Cu-PVB composite film using an inverted layer process and intense-pulsed-light treatment. The strong affinity of PVB to the polyvinyl pyrrolidone (PVP) layer, which capped the AgNWs, mechanically stabilized the device to such an extent that it could resist 10,000 bending cycles under a curvature radius of 500 μm. Using AgNW networks in both the top and bottom electrodes made a double-sided light-emitting device that could be applied to wearable lightings or flexible digital signage. The capacitance formed in the device sensitively varied with the applied bending and unfolding, thus demonstrating that the device can also be used as a deformation sensor.

Transparent Electrode Based on Silver Nanowires and Polyimide for Film Heater and Flexible Solar Cell.

Science.gov (United States)

He, Xin; Duan, Feng; Liu, Junyan; Lan, Qiuming; Wu, Jianhao; Yang, Chengyan; Yang, Weijia; Zeng, Qingguang; Wang, Huafang

2017-11-29

Transparent, conductive, and flexible Ag nanowire (NW)-polyimide (PI) composite films were fabricated by a facile solution method. Well-dispersed Ag NWs result in percolation networks on the PI supporting layer. A series of films with transmittance values of 53-80% and sheet resistances of 2.8-16.5 Ω/sq were investigated. To further verify the practicability of the Ag NWs-PI film in optoelectronic devices, we utilized it in a film heater and a flexible solar cell. The film heater was able to generate a temperature of 58 °C at a driving voltage of 3.5 V within 20 s, indicating its potential application in heating devices that require low power consumption and fast response. The flexible solar cell based on the composite film with a transmittance value of 71% presented a power conversion efficiency of 3.53%. These successful applications proved that the fabricated Ag NWs-PI composite film is a good candidate for application in flexible optoelectronic devices.

Epitaxy of advanced nanowire quantum devices

NARCIS (Netherlands)

Gazibegovic, S.; Car, D.; Zhang, H.; Balk, S.C.; Logan, J.A.; De Moor, M.W.A.; Cassidy, M.C.; Schmits, R.; Xu, D.; Wang, G.; Krogstrup, P.; Op Het Veld, R.L.M.; Zuo, K.; Vos, Y.; Shen, J.; Bouman, D.; Shojaei, B.; Pennachio, D.; Lee, J.S.; van Veldhoven, P.J.; Koelling, S.; Verheijen, M.A.; Kouwenhoven, L.P.; Palmstrøm, C.J.; Bakkers, E.P.A.M.

2017-01-01

Semiconductor nanowires are ideal for realizing various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasiparticles (such as anyons) can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought into contact with a

Contact materials for nanowire devices and nanoelectromechanical switches

KAUST Repository

Hussain, Muhammad Mustafa

2011-02-01

The impact of contact materials on the performance of nanostructured devices is expected to be signifi cant. This is especially true since size scaling can increase the contact resistance and induce many unseen phenomenon and reactions that greatly impact device performance. Nanowire and nanoelectromechanical switches are two emerging nanoelectronic devices. Nanowires provide a unique opportunity to control the property of a material at an ultra-scaled dimension, whereas a nanoelectromechanical switch presents zero power consumption in its off state, as it is physically detached from the sensor anode. In this article, we specifi cally discuss contact material issues related to nanowire devices and nanoelectromechanical switches.

Roll-to-roll printed silver nanowires for increased stability of flexible ITO-free organic solar cell modules

DEFF Research Database (Denmark)

Benatto, Gisele Alves dos Reis; Roth, Bérenger; Corazza, Michael

2016-01-01

We report the use of roll-to-roll printed silver nanowire networks as front electrodes for fully roll-to-roll processed flexible indium-tin-oxide (ITO) free OPV modules. We prepared devices with two types of back electrodes, a simple PEDOT:PSS back electrode and a PEDOT:PSS back electrode...

Large-Area Cross-Aligned Silver Nanowire Electrodes for Flexible, Transparent, and Force-Sensitive Mechanochromic Touch Screens.

Science.gov (United States)

Cho, Seungse; Kang, Saewon; Pandya, Ashish; Shanker, Ravi; Khan, Ziyauddin; Lee, Youngsu; Park, Jonghwa; Craig, Stephen L; Ko, Hyunhyub

2017-04-25

Silver nanowire (AgNW) networks are considered to be promising structures for use as flexible transparent electrodes for various optoelectronic devices. One important application of AgNW transparent electrodes is the flexible touch screens. However, the performances of flexible touch screens are still limited by the large surface roughness and low electrical to optical conductivity ratio of random network AgNW electrodes. In addition, although the perception of writing force on the touch screen enables a variety of different functions, the current technology still relies on the complicated capacitive force touch sensors. This paper demonstrates a simple and high-throughput bar-coating assembly technique for the fabrication of large-area (>20 × 20 cm 2 ), highly cross-aligned AgNW networks for transparent electrodes with the sheet resistance of 21.0 Ω sq -1 at 95.0% of optical transmittance, which compares favorably with that of random AgNW networks (sheet resistance of 21.0 Ω sq -1 at 90.4% of optical transmittance). As a proof of concept demonstration, we fabricate flexible, transparent, and force-sensitive touch screens using cross-aligned AgNW electrodes integrated with mechanochromic spiropyran-polydimethylsiloxane composite film. Our force-sensitive touch screens enable the precise monitoring of dynamic writings, tracing and drawing of underneath pictures, and perception of handwriting patterns with locally different writing forces. The suggested technique provides a robust and powerful platform for the controllable assembly of nanowires beyond the scale of conventional fabrication techniques, which can find diverse applications in multifunctional flexible electronic and optoelectronic devices.

All-solid-state flexible supercapacitors based on highly dispersed polypyrrole nanowire and reduced graphene oxide composites.

Science.gov (United States)

Yu, Chenfei; Ma, Peipei; Zhou, Xi; Wang, Anqi; Qian, Tao; Wu, Shishan; Chen, Qiang

2014-10-22

Highly dispersed polypyrrole nanowires are decorated on reduced graphene oxide sheets using a facile in situ synthesis route. The prepared composites exhibit high dispersibility, large effective surface area, and high electric conductivity. All-solid-state flexible supercapacitors are assembled based on the prepared composites, which show excellent electrochemical performances with a specific capacitance of 434.7 F g(-1) at a current density of 1 A g(-1). The as-fabricated supercapacitor also exhibits excellent cycling stability (88.1% capacitance retention after 5000 cycles) and exceptional mechanical flexibility. In addition, outstanding power and energy densities were obtained, demonstrating the significant potential of prepared material for flexible and portable energy storage devices.

Printing an ITO-free flexible poly (4-vinylphenol) resistive switching device

Science.gov (United States)

Ali, Junaid; Rehman, Muhammad Muqeet; Siddiqui, Ghayas Uddin; Aziz, Shahid; Choi, Kyung Hyun

2018-02-01

Resistive switching in a sandwich structure of silver (Ag)/Polyvinyl phenol (PVP)/carbon nanotube (CNTs)-silver nanowires (AgNWs) coated on a flexible PET substrate is reported in this work. Densely populated networks of one dimensional nano materials (1DNM), CNTs-AgNWs have been used as the conductive bottom electrode with the prominent features of high flexibility and low sheet resistance of 90 Ω/sq. Thin, yet uniform active layer of PVP was deposited on top of the spin coated 1DNM thin film through state of the art printing technique of electrohydrodynamic atomization (EHDA) with an average thickness of 170 ± 28 nm. Ag dots with an active area of ∼0.1 mm2 were deposited through roll to plate printing system as the top electrodes to complete the device fabrication of flexible memory device. Our memory device exhibited suitable electrical characteristics with OFF/ON ratio of 100:1, retention time of 60 min and electrical endurance for 100 voltage sweeps without any noticeable decay in performance. The resistive switching characteristics at a low current compliance of 3 nA were also evaluated for the application of low power consumption. This memory device is flexible and can sustain more than 100 bending cycles at a bending diameter of 2 cm with stable HRS and LRS values. Our proposed device shows promise to be used as a future potential nonvolatile memory device in flexible electronics.

Silver nanowires network encapsulated by low temperature sol-gel ZnO for transparent flexible electrodes with ambient stability

Science.gov (United States)

Shin, Wonjung; Cho, Wonki; Baik, Seung Jae

2018-01-01

As a geometrically engineered realization of transparent electrode, Ag nanowires network is promising for its superior characteristics both on electrical conductivity and optical transmittance. However, for a potential commercialization of Ag nanowires network, further investigations on encapsulation materials are necessary to prevent degradation caused by ambient aging. In addition, the temperature range of the coating process for the encapsulation material needs to be low enough to prevent degradation of polymer substrates during the film coating processes, when considering emerging flexible device application of transparent electrodes. We present experimental results showing that low temperature sol-gel ZnO processed under 130 °C is an effective encapsulation material preventing ambient oxidation of Ag nanowires network without degrading electrical, optical, and mechanical properties.

Ultraviolet photodetection of flexible ZnO nanowire sheets in polydimethylsiloxane polymer

OpenAIRE

Jinzhang Liu; Nunzio Motta; Soonil Lee

2012-01-01

Summary ZnO nanowires are normally exposed to an oxygen atmosphere to achieve high performance in UV photodetection. In this work we present results on a UV photodetector fabricated using a flexible ZnO nanowire sheet embedded in polydimethylsiloxane (PDMS), a gas-permeable polymer, showing reproducible UV photoresponse and enhanced photoconduction. PDMS coating results in a reduced response speed compared to that of a ZnO nanowire film in air. The rising speed is slightly reduced, while the ...

Nanowire Lasers

Directory of Open Access Journals (Sweden)

Couteau C.

2015-05-01

Full Text Available We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light-emitting diodes (LEDs, solar cells, and transistors. Intensive research has also been conducted in the use of nanowires for subwavelength laser systems that take advantage of their quasione- dimensional (1D nature, flexibility in material choice and combination, and intrinsic optoelectronic properties. First, we provide an overview on using quasi-1D nanowire systems to realize subwavelength lasers with efficient, directional, and low-threshold emission. We then describe the state of the art for nanowire lasers in terms of materials, geometry, andwavelength tunability.Next,we present the basics of lasing in semiconductor nanowires, define the key parameters for stimulated emission, and introduce the properties of nanowires. We then review advanced nanowire laser designs from the literature. Finally, we present interesting perspectives for low-threshold nanoscale light sources and optical interconnects. We intend to illustrate the potential of nanolasers inmany applications, such as nanophotonic devices that integrate electronics and photonics for next-generation optoelectronic devices. For instance, these building blocks for nanoscale photonics can be used for data storage and biomedical applications when coupled to on-chip characterization tools. These nanoscale monochromatic laser light sources promise breakthroughs in nanophotonics, as they can operate at room temperature, can potentially be electrically driven, and can yield a better understanding of intrinsic nanomaterial properties and surface-state effects in lowdimensional semiconductor systems.

Piezo-Phototronic Effect Enhanced Flexible Solar Cells Based on n-ZnO/p-SnS Core-Shell Nanowire Array.

Science.gov (United States)

Zhu, Laipan; Wang, Longfei; Xue, Fei; Chen, Libo; Fu, Jianqiang; Feng, Xiaolong; Li, Tianfeng; Wang, Zhong Lin

2017-01-01

The piezo-phototronic effect is about the enhanced separation, transport, and recombination of the photogenerated carriers using the piezoelectric polarization charges present in piezoelectric-semiconductor materials. Here, it is presented that the piezo-phototronic effect can be effectively applied to improve the relative conversion efficiency of a flexible solar cell based on n-ZnO/p-SnS core-shell nanowire array for 37.3% under a moderate vertical pressure. The performance of the solar cell can be effectively enhanced by a gentle bending of the device, showing its potential for application in curly geometries. This study not only adds further understanding about the concept of increasing solar energy conversion efficiency via piezo-phototronic effect, but also demonstrates the great potential of piezo-phototronic effect in the application of large-scale, flexible, and lightweight nanowire array solar cells.

Piezo‐Phototronic Effect Enhanced Flexible Solar Cells Based on n‐ZnO/p‐SnS Core–Shell Nanowire Array

Science.gov (United States)

Zhu, Laipan; Wang, Longfei; Xue, Fei; Chen, Libo; Fu, Jianqiang; Feng, Xiaolong; Li, Tianfeng

2016-01-01

The piezo‐phototronic effect is about the enhanced separation, transport, and recombination of the photogenerated carriers using the piezoelectric polarization charges present in piezoelectric‐semiconductor materials. Here, it is presented that the piezo‐phototronic effect can be effectively applied to improve the relative conversion efficiency of a flexible solar cell based on n‐ZnO/p‐SnS core–shell nanowire array for 37.3% under a moderate vertical pressure. The performance of the solar cell can be effectively enhanced by a gentle bending of the device, showing its potential for application in curly geometries. This study not only adds further understanding about the concept of increasing solar energy conversion efficiency via piezo‐phototronic effect, but also demonstrates the great potential of piezo‐phototronic effect in the application of large‐scale, flexible, and lightweight nanowire array solar cells. PMID:28105394

Mechanical transfer of ZnO nanowires for a flexible and conformal piezotronic strain sensor

Science.gov (United States)

Jenkins, Kory; Yang, Rusen

2017-07-01

We demonstrate a truly conformal and flexible piezotronic strain sensor using zinc oxide (ZnO) nanowires. Well-aligned, vertical ZnO nanowires are grown by chemical vapor deposition on a silicon wafer with a hydrothermally grown ZnO seed layer. The nanowires are infiltrated with polydimethylsiloxane and mechanically transferred from the silicon substrate. Plasma etching exposes the top surface of the nanowires before deposition of a gold (Au) top electrode. The bottom electrode is formed by silver paint which also adheres the sensor to the measured structure. To demonstrate the sensor’s ability to conform to complex surfaces, a stepped shaft with a shoulder fillet is used. The sensor is attached to the shoulder fillet of the stepped shaft, conforming to both the circumference of the shaft, and the radius of the fillet. A periodic bending displacement is applied to the end of the shaft. The strain induces a piezoelectric potential in the ZnO nanowires which controls the barrier height and conductivity at the gold/ZnO interface, by what is known as the piezotronic effect. The conductivity change is measured for periodically applied strains. The nonlinear current-voltage (I-V) response of the device is due to the Schottky contact between the ZnO nanowires and gold electrode. The geometry of the stepped shaft corresponds to a known stress concentration factor, and the strain experienced by the shaft is estimated with a COMSOL FEA study. The conformal nature of the strain sensor makes it suitable for structural monitoring applications involving complex geometries and stress concentrators.

Ultraviolet photodetection of flexible ZnO nanowire sheets in polydimethylsiloxane polymer.

Science.gov (United States)

Liu, Jinzhang; Motta, Nunzio; Lee, Soonil

2012-01-01

ZnO nanowires are normally exposed to an oxygen atmosphere to achieve high performance in UV photodetection. In this work we present results on a UV photodetector fabricated using a flexible ZnO nanowire sheet embedded in polydimethylsiloxane (PDMS), a gas-permeable polymer, showing reproducible UV photoresponse and enhanced photoconduction. PDMS coating results in a reduced response speed compared to that of a ZnO nanowire film in air. The rising speed is slightly reduced, while the decay time is prolonged by about a factor of four. We conclude that oxygen molecules diffusing in PDMS are responsible for the UV photoresponse.

Vertically aligned nanowires on flexible silicone using a supported alumina template prepared by pulsed anodization

DEFF Research Database (Denmark)

Mátéfi-Tempfli, Stefan; Mátéfi-Tempfli, M.

2009-01-01

Carpets of vertically aligned nanowires on flexible substrates are successfully realized by a template method. Applying special pulsed anodization conditions, defect-free nanoporous alumina structures supported on polydimethylsiloxane (PDMS), a flexible silicone elastomer, are created. By using...... this template with nanopores ending on a conducting underlayer, a high-density nanowire array can be simply grown by direct DCelectrodeposition on the top of the silicone rubber....

In Situ TEM Creation of Nanowire Devices

DEFF Research Database (Denmark)

Alam, Sardar Bilal

Integration of silicon nanowires (SiNWs) as active components in devices requires that desired mechanical, thermal and electrical interfaces can be established between the nanoscale geometry of the SiNW and the microscale architecture of the device. In situ transmission electron microscopy (TEM),...

Electrical and Optical Characterization of Nanowire based Semiconductor Devices

Science.gov (United States)

Ayvazian, Talin

This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand and optimize the electrical and optical properties of two types of nanoscale devices; in first type lithographically patterned nanowire electrodeposition (LPNE) method has been utilized to fabricate nanowire field effect transistors (NWFET) and second type involved the development of light emitting semiconductor nanowire arrays (NWLED). Field effect transistors (NWFETs) have been prepared from arrays of polycrystalline cadmium selenide (pc-CdSe) nanowires using a back gate configuration. pc-CdSe nanowires were fabricated using the lithographically patterned nanowire electrode- position (LPNE) process on SiO2 /Si substrates. After electrodeposition, pc-CdSe nanowires were thermally annealed at 300 °C x 4 h either with or without exposure to CdCl 2 in methanol a grain growth promoter. The influence of CdCl2 treatment was to increase the mean grain diameter as determined by X-ray diffraction pattern and to convert the crystal structure from cubic to wurtzite. Transfer characteristics showed an increase of the field effect mobility (mu eff) by an order of magnitude and increase of the Ion/I off ratio by a factor of 3-4. Light emitting devices (NW-LED) based on lithographically patterned pc-CdSe nanowire arrays have been investigated. Electroluminescence (EL) spectra of CdSe nanowires under various biases exhibited broad emission spectra centered at 750 nm close to the band gap of CdSe (1.7eV). To enhance the intensity of the emitted light and the external quantum efficiency (EQE), the distance between the contacts were reduced from 5 mum to less than 1 mum which increased the efficiency by an order of magnitude. Also, increasing the annealing temperature of nanowires from 300 °C x4 h to 450 This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand

A graphene/single GaAs nanowire Schottky junction photovoltaic device.

Science.gov (United States)

Luo, Yanbin; Yan, Xin; Zhang, Jinnan; Li, Bang; Wu, Yao; Lu, Qichao; Jin, Chenxiaoshuai; Zhang, Xia; Ren, Xiaomin

2018-05-04

A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices. Here we demonstrate a graphene/single GaAs nanowire Schottky junction photovoltaic device. The Schottky junction is fabricated by covering a single layer graphene onto an n-doped GaAs nanowire. Under 532 nm laser excitation, the device exhibits a high responsivity of 231 mA W-1 and a short response/recover time of 85/118 μs at zero bias. Under AM 1.5 G solar illumination, the device has an open-circuit voltage of 75.0 mV and a short-circuit current density of 425 mA cm-2, yielding a remarkable conversion efficiency of 8.8%. The excellent photovoltaic performance of the device is attributed to the strong built-in electric field in the Schottky junction as well as the transparent property of graphene. The device is promising for self-powered high-speed photodetectors and low-cost high-efficiency solar cells.

In Situ TEM Creation and Electrical Characterization of Nanowire Devices

DEFF Research Database (Denmark)

Kallesøe, Christian; Wen, Cheng-Yen; Booth, Timothy J.

2012-01-01

bridge devices in situ and relate these to the structure. We also describe processes to modify the contact and the nanowire surface after device formation. The technique we describe allows the direct analysis of the processes taking place during device formation and use, correlating specific nanoscale......We demonstrate the observation and measurement of simple nanoscale devices over their complete lifecycle from creation to failure within a transmission electron microscope. Devices were formed by growing Si nanowires, using the vapor–liquid–solid method, to form bridges between Si cantilevers. We...... structural and electrical parameters on an individual device basis....

Nickel-cobalt layered double hydroxide anchored zinc oxide nanowires grown on carbon fiber cloth for high-performance flexible pseudocapacitive energy storage devices

KAUST Repository

Shakir, Imran; Shahid, Muhammad; Rana, Usman Ali; Nashef, Inas M Al; Hussain, Rafaqat

2014-01-01

Nickel-cobalt layered double hydroxide (Ni-Co LDH) nanoflakes-ZnO nanowires hybrid array has been directly synthesized on a carbon cloth substrate by a facile cost-effective two-step hydrothermal route. As electrode materials for flexible pseudocapacitors, Ni-Co LDH nanoflakes-ZnO nanowires hybrid array exhibits a significantly enhanced specific capacitance of 1927 Fg-1, which is a ∼1.8 time greater than pristine Ni-Co LDH nanoflakes. The synthesized Ni-Co LDH nanoflakes-ZnO nanowires hybrid array shows a maximum energy density of 45.55 Whkg-1 at a power density of 46.15 kWkg -1, which is 35% higher than the pristine Ni-Co LDH nanoflakes electrode. Moreover, Ni-Co LDH nanoflakes-ZnO nanowires hybrid array exhibit excellent excellent rate capability (80.3% capacity retention at 30 Ag -1) and cycling stability (only 3.98% loss after 3000 cycles), due to the significantly improved faradaic redox reaction. © 2014 Elsevier Ltd.

Nickel-cobalt layered double hydroxide anchored zinc oxide nanowires grown on carbon fiber cloth for high-performance flexible pseudocapacitive energy storage devices

KAUST Repository

Shakir, Imran

2014-05-01

Nickel-cobalt layered double hydroxide (Ni-Co LDH) nanoflakes-ZnO nanowires hybrid array has been directly synthesized on a carbon cloth substrate by a facile cost-effective two-step hydrothermal route. As electrode materials for flexible pseudocapacitors, Ni-Co LDH nanoflakes-ZnO nanowires hybrid array exhibits a significantly enhanced specific capacitance of 1927 Fg-1, which is a ∼1.8 time greater than pristine Ni-Co LDH nanoflakes. The synthesized Ni-Co LDH nanoflakes-ZnO nanowires hybrid array shows a maximum energy density of 45.55 Whkg-1 at a power density of 46.15 kWkg -1, which is 35% higher than the pristine Ni-Co LDH nanoflakes electrode. Moreover, Ni-Co LDH nanoflakes-ZnO nanowires hybrid array exhibit excellent excellent rate capability (80.3% capacity retention at 30 Ag -1) and cycling stability (only 3.98% loss after 3000 cycles), due to the significantly improved faradaic redox reaction. © 2014 Elsevier Ltd.

Ultraviolet photodetection of flexible ZnO nanowire sheets in polydimethylsiloxane polymer

Directory of Open Access Journals (Sweden)

Jinzhang Liu

2012-05-01

Full Text Available ZnO nanowires are normally exposed to an oxygen atmosphere to achieve high performance in UV photodetection. In this work we present results on a UV photodetector fabricated using a flexible ZnO nanowire sheet embedded in polydimethylsiloxane (PDMS, a gas-permeable polymer, showing reproducible UV photoresponse and enhanced photoconduction. PDMS coating results in a reduced response speed compared to that of a ZnO nanowire film in air. The rising speed is slightly reduced, while the decay time is prolonged by about a factor of four. We conclude that oxygen molecules diffusing in PDMS are responsible for the UV photoresponse.

Controllable growth of polyaniline nanowire arrays on hierarchical macro/mesoporous graphene foams for high-performance flexible supercapacitors

International Nuclear Information System (INIS)

Yu, Pingping; Zhao, Xin; Li, Yingzhi; Zhang, Qinghua

2017-01-01

Highlights: • Hierarchical porous graphene foam prepared by templating and embossing method.. • Vertically PANI nanowires aligned on interconnected porous graphene sheets. • The fRGO-F/PANI device exhibited 939 F g"−"1 at 1 A g"−"1. • ED and PD of fRGO-F/PANI device was 20.9 Wh kg"−"1 and 103.2 kW kg"−"1. - Abstract: Free-standing hierarchical macro/mesoporous flexible graphene foam have been constructed by rational intergration ofwell dispersed graphene oxide sheets and amino-modified polystyrene (PS) spheres through a facile “templating and embossing” technique. The three dimensional (3D) macro/mesoporous flexible graphene foam not only inherits the uniform porous structures of graphene foam, but also contains hierarchical macro/mesopores on the struts by sacrificing PS spheres and the activation of KOH, which could providing rapid pathways for ionic and electronic transport to high specific capacitance. Vertically polyaniline (PANI) nanowire arrays are then uniformly deposited onto the hierarchical macro/mesoporous graphene foam(fRGO-F/PANI) by a simple in situ polymerization, which show a high specific capacitance of 939 F g"−"1. Thanks to the synergistic function of 3D bicontinuous hierarchical porous structure of graphene foam and effective immobilization of PANI nanowires on the struts, the assembled symmetric supercapctior with fRGO-F/PANI as electrodes exhibits a maximum energy density and power density of 20.9 Wh kg"−"1 and 103.2 kW kg"−"1, respectively. Moreover, it also displays an excellent cyclic stability with a 88.7% retention after 5000 cycles.

Controllable growth of polyaniline nanowire arrays on hierarchical macro/mesoporous graphene foams for high-performance flexible supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Yu, Pingping [State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620 (China); Department of Materials Science, Fudan University, Shanghai 200433 (China); Zhao, Xin, E-mail: xzhao@dhu.edu.cn [State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620 (China); Li, Yingzhi [State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620 (China); Zhang, Qinghua, E-mail: qhzhang@dhu.edu.cn [State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620 (China)

2017-01-30

Highlights: • Hierarchical porous graphene foam prepared by templating and embossing method.. • Vertically PANI nanowires aligned on interconnected porous graphene sheets. • The fRGO-F/PANI device exhibited 939 F g{sup −1} at 1 A g{sup −1}. • ED and PD of fRGO-F/PANI device was 20.9 Wh kg{sup −1} and 103.2 kW kg{sup −1}. - Abstract: Free-standing hierarchical macro/mesoporous flexible graphene foam have been constructed by rational intergration ofwell dispersed graphene oxide sheets and amino-modified polystyrene (PS) spheres through a facile “templating and embossing” technique. The three dimensional (3D) macro/mesoporous flexible graphene foam not only inherits the uniform porous structures of graphene foam, but also contains hierarchical macro/mesopores on the struts by sacrificing PS spheres and the activation of KOH, which could providing rapid pathways for ionic and electronic transport to high specific capacitance. Vertically polyaniline (PANI) nanowire arrays are then uniformly deposited onto the hierarchical macro/mesoporous graphene foam(fRGO-F/PANI) by a simple in situ polymerization, which show a high specific capacitance of 939 F g{sup −1}. Thanks to the synergistic function of 3D bicontinuous hierarchical porous structure of graphene foam and effective immobilization of PANI nanowires on the struts, the assembled symmetric supercapctior with fRGO-F/PANI as electrodes exhibits a maximum energy density and power density of 20.9 Wh kg{sup −1} and 103.2 kW kg{sup −1}, respectively. Moreover, it also displays an excellent cyclic stability with a 88.7% retention after 5000 cycles.

Preparation and characterization of flexible asymmetric supercapacitors based on transition-metal-oxide nanowire/single-walled carbon nanotube hybrid thin-film electrodes.

Science.gov (United States)

Chen, Po-Chiang; Shen, Guozhen; Shi, Yi; Chen, Haitian; Zhou, Chongwu

2010-08-24

In the work described in this paper, we have successfully fabricated flexible asymmetric supercapacitors (ASCs) based on transition-metal-oxide nanowire/single-walled carbon nanotube (SWNT) hybrid thin-film electrodes. These hybrid nanostructured films, with advantages of mechanical flexibility, uniform layered structures, and mesoporous surface morphology, were produced by using a filtration method. Here, manganese dioxide nanowire/SWNT hybrid films worked as the positive electrode, and indium oxide nanowire/SWNT hybrid films served as the negative electrode in a designed ASC. In our design, charges can be stored not only via electrochemical double-layer capacitance from SWNT films but also through a reversible faradic process from transition-metal-oxide nanowires. In addition, to obtain stable electrochemical behavior during charging/discharging cycles in a 2 V potential window, the mass balance between two electrodes has been optimized. Our optimized hybrid nanostructured ASCs exhibited a superior device performance with specific capacitance of 184 F/g, energy density of 25.5 Wh/kg, and columbic efficiency of approximately 90%. In addition, our ASCs exhibited a power density of 50.3 kW/kg, which is 10-fold higher than obtained in early reported ASC work. The high-performance hybrid nanostructured ASCs can find applications in conformal electrics, portable electronics, and electrical vehicles.

Fully transparent thin-film transistor devices based on SnO2 nanowires.

Science.gov (United States)

Dattoli, Eric N; Wan, Qing; Guo, Wei; Chen, Yanbin; Pan, Xiaoqing; Lu, Wei

2007-08-01

We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nano-wires. The nanowire-based devices exhibit uniform characteristics with average field-effect mobilities exceeding 100 cm2/V x s. Prototype nano-wire-based TFT (NW-TFT) devices on glass substrates showed excellent optical transparency and transistor performance in terms of transconductance, bias voltage range, and on/off ratio. High on-currents and field-effect mobilities were obtained from the NW-TFT devices even at low nanowire coverage. The SnO2 nanowire-based TFT approach offers a number of desirable properties such as low growth cost, high electron mobility, and optical transparency and low operation voltage, and may lead to large-scale applications of transparent electronics on diverse substrates.

Enhancement of Light Absorption in Silicon Nanowire Photovoltaic Devices with Dielectric and Metallic Grating Structures.

Science.gov (United States)

Park, Jin-Sung; Kim, Kyoung-Ho; Hwang, Min-Soo; Zhang, Xing; Lee, Jung Min; Kim, Jungkil; Song, Kyung-Deok; No, You-Shin; Jeong, Kwang-Yong; Cahoon, James F; Kim, Sun-Kyung; Park, Hong-Gyu

2017-12-13

We report the enhancement of light absorption in Si nanowire photovoltaic devices with one-dimensional dielectric or metallic gratings that are fabricated by a damage-free, precisely aligning, polymer-assisted transfer method. Incorporation of a Si 3 N 4 grating with a Si nanowire effectively enhances the photocurrents for transverse-electric polarized light. The wavelength at which a maximum photocurrent is generated is readily tuned by adjusting the grating pitch. Moreover, the electrical properties of the nanowire devices are preserved before and after transferring the Si 3 N 4 gratings onto Si nanowires, ensuring that the quality of pristine nanowires is not degraded during the transfer. Furthermore, we demonstrate Si nanowire photovoltaic devices with Ag gratings using the same transfer method. Measurements on the fabricated devices reveal approximately 27.1% enhancement in light absorption compared to that of the same devices without the Ag gratings without any degradation of electrical properties. We believe that our polymer-assisted transfer method is not limited to the fabrication of grating-incorporated nanowire photovoltaic devices but can also be generically applied for the implementation of complex nanoscale structures toward the development of multifunctional optoelectronic devices.

High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics.

Science.gov (United States)

Han, Ning; Yang, Zai-xing; Wang, Fengyun; Dong, Guofa; Yip, SenPo; Liang, Xiaoguang; Hung, Tak Fu; Chen, Yunfa; Ho, Johnny C

2015-09-16

Among many available photovoltaic technologies at present, gallium arsenide (GaAs) is one of the recognized leaders for performance and reliability; however, it is still a great challenge to achieve cost-effective GaAs solar cells for smart systems such as transparent and flexible photovoltaics. In this study, highly crystalline long GaAs nanowires (NWs) with minimal crystal defects are synthesized economically by chemical vapor deposition and configured into novel Schottky photovoltaic structures by simply using asymmetric Au-Al contacts. Without any doping profiles such as p-n junction and complicated coaxial junction structures, the single NW Schottky device shows a record high apparent energy conversion efficiency of 16% under air mass 1.5 global illumination by normalizing to the projection area of the NW. The corresponding photovoltaic output can be further enhanced by connecting individual cells in series and in parallel as well as by fabricating NW array solar cells via contact printing showing an overall efficiency of 1.6%. Importantly, these Schottky cells can be easily integrated on the glass and plastic substrates for transparent and flexible photovoltaics, which explicitly demonstrate the outstanding versatility and promising perspective of these GaAs NW Schottky photovoltaics for next-generation smart solar energy harvesting devices.

Investigation on nickel ferrite nanowire device exhibiting negative differential resistance — a first-principles investigation

Directory of Open Access Journals (Sweden)

V. Nagarajan

2017-06-01

Full Text Available The electronic property of NiFe_2O_4 nanowire device is investigated through nonequilibrium Green’s functions (NEGF in combination with density functional theory (DFT. The electronic transport properties of NiFe_2O_4 nanowire are studied in terms of density of states, transmission spectrum and I–V characteristics. The density of states gets modified with the applied bias voltage across NiFe_2O_4 nanowire device, the density of charge is observed both in the valence band and in the conduction band on increasing the bias voltage. The transmission spectrum of NiFe_2O_4 nanowire device gives the insights on the transition of electrons at different energy intervals. The findings of the present work suggest that NiFe_2O_4 nanowire device can be used as negative differential resistance (NDR device and its NDR property can be tuned with the bias voltage, which may be used in microwave device, memory devices and in fast switching devices.

A wearable and highly sensitive pressure sensor with ultrathin gold nanowires

Science.gov (United States)

Gong, Shu; Schwalb, Willem; Wang, Yongwei; Chen, Yi; Tang, Yue; Si, Jye; Shirinzadeh, Bijan; Cheng, Wenlong

2014-02-01

Ultrathin gold nanowires are mechanically flexible yet robust, which are novel building blocks with potential applications in future wearable optoelectronic devices. Here we report an efficient, low-cost fabrication strategy to construct a highly sensitive, flexible pressure sensor by sandwiching ultrathin gold nanowire-impregnated tissue paper between two thin polydimethylsiloxane sheets. The entire device fabrication process is scalable, enabling facile large-area integration and patterning for mapping spatial pressure distribution. Our gold nanowires-based pressure sensors can be operated at a battery voltage of 1.5 V with low energy consumption (1.14 kPa-1) and high stability (>50,000 loading-unloading cycles). In addition, our sensor can resolve pressing, bending, torsional forces and acoustic vibrations. The superior sensing properties in conjunction with mechanical flexibility and robustness enabled real-time monitoring of blood pulses as well as detection of small vibration forces from music.

Electrostatic spray deposition of highly transparent silver nanowire electrode on flexible substrate.

Science.gov (United States)

Kim, Taegeon; Canlier, Ali; Kim, Geun Hong; Choi, Jaeho; Park, Minkyu; Han, Seung Min

2013-02-01

In this work, a modified polyol synthesis by adding KBr and by replacing the AgCl with NaCl seed was used to obtain high quality silver nanowires with long aspect ratios with an average length of 13.5 μm in length and 62.5 nm in diameter. The Ag nanowires suspended in methanol solution after removing any unwanted particles using a glass filter system were then deposited on a flexible polycarbonate substrate using an electrostatic spray system. Transmittance of 92.1% at wavelength of 550 nm with sheet resistance of 20 Ω/sq and haze of 4.9% were measured for the electrostatic sprayed Ag nanowire transparent electrode.

Low-temperature-cured highly conductive composite of Ag nanowires and polyvinyl alcohol

International Nuclear Information System (INIS)

He Song; Zhang Xiang; Yang Bingchu; Xu Xiaomei; Chen Hui; Zhou Conghua

2017-01-01

Flexible conductive films were fabricated from a low-temperature-cured, highly conductive composite of silver nanowires (as conducting filler) and polyvinyl alcohol (PVA, as binder). Sheet resistance of 0.12 Ω/sq, conductivity of 2.63×10 4 S/cm, and contact resistance of 1.0 Ω/cm 2 were measured in the films, along with excellent resistance to scratching and good flexibility, making them suitable electrical contact materials for flexible optoelectronic devices. Effects of curing temperature, curing duration, film thickness, and nanowire length on the film’s electrical properties were studied. Due to the abundance of hydroxyl groups on its molecular chains, the addition of PVA improves the film’s flexibility and resistance to scratching. Increased nanowire density and nanowire length benefit film conductance. Monte Carlo simulation was used to further explore the impact of these two parameters on the conductivity. It was observed that longer nanowires produce a higher length-ratio of conducting routes in the networks, giving better film conductivity. (paper)

Nanowire Photovoltaic Devices

Science.gov (United States)

Forbes, David

2015-01-01

Firefly Technologies, in collaboration with the Rochester Institute of Technology and the University of Wisconsin-Madison, developed synthesis methods for highly strained nanowires. Two synthesis routes resulted in successful nanowire epitaxy: direct nucleation and growth on the substrate and a novel selective-epitaxy route based on nanolithography using diblock copolymers. The indium-arsenide (InAs) nanowires are implemented in situ within the epitaxy environment-a significant innovation relative to conventional semiconductor nanowire generation using ex situ gold nanoparticles. The introduction of these nanoscale features may enable an intermediate band solar cell while simultaneously increasing the effective absorption volume that can otherwise limit short-circuit current generated by thin quantized layers. The use of nanowires for photovoltaics decouples the absorption process from the current extraction process by virtue of the high aspect ratio. While no functional solar cells resulted from this effort, considerable fundamental understanding of the nanowire epitaxy kinetics and nanopatterning process was developed. This approach could, in principle, be an enabling technology for heterointegration of dissimilar materials. The technology also is applicable to virtual substrates. Incorporating nanowires onto a recrystallized germanium/metal foil substrate would potentially solve the problem of grain boundary shunting of generated carriers by restricting the cross-sectional area of the nanowire (tens of nanometers in diameter) to sizes smaller than the recrystallized grains (0.5 to 1 micron(exp 2).

Silicon nanowire networks for multi-stage thermoelectric modules

International Nuclear Information System (INIS)

Norris, Kate J.; Garrett, Matthew P.; Zhang, Junce; Coleman, Elane; Tompa, Gary S.; Kobayashi, Nobuhiko P.

2015-01-01

Highlights: • Fabricated flexible single, double, and quadruple stacked Si thermoelectric modules. • Measured an enhanced power production of 27%, showing vertical stacking is scalable. • Vertically scalable thermoelectric module design of semiconducting nanowires. • Design can utilize either p or n-type semiconductors, both types are not required. • ΔT increases with thickness therefore power/area can increase as modules are stacked. - Abstract: We present the fabrication and characterization of single, double, and quadruple stacked flexible silicon nanowire network based thermoelectric modules. From double to quadruple stacked modules, power production increased 27%, demonstrating that stacking multiple nanowire thermoelectric devices in series is a scalable method to generate power by supplying larger temperature gradient. We present a vertically scalable multi-stage thermoelectric module design using semiconducting nanowires, eliminating the need for both n-type and p-type semiconductors for modules

David Adler Lectureship Award Talk: III-V Semiconductor Nanowires on Silicon for Future Devices

Science.gov (United States)

Riel, Heike

Bottom-up grown nanowires are very attractive materials for direct integration of III-V semiconductors on silicon thus opening up new possibilities for the design and fabrication of nanoscale devices for electronic, optoelectronic as well as quantum information applications. Template-Assisted Selective Epitaxy (TASE) allows the well-defined and monolithic integration of complex III-V nanostructures and devices on silicon. Achieving atomically abrupt heterointerfaces, high crystal quality and control of dimension down to 1D nanowires enabled the demonstration of FETs and tunnel devices based on In(Ga)As and GaSb. Furthermore, the strong influence of strain on nanowires as well as results on quantum transport studies of InAs nanowires with well-defined geometry will be presented.

Quantum transport in nanowire-based hybrid devices

Energy Technology Data Exchange (ETDEWEB)

Guenel, Haci Yusuf

2013-05-08

the Andreev reflection of quasiparticles at single interface, by suppressing the superconductivity of Al with small magnetic fields, as well as at double interface for zero magnetic field. The junction geometry was further changed by replacing the InAs nanowire with the InAs tube. In this case the GaAs/InAs core/shell tubular nanowires were contacted by two superconducting Nb electrodes. For this junction geometry we have demonstrated the interference of phase conjugated electron-hole pairs in the presence of coaxial magnetic. The effect of temperature, constant dc bias current and gate voltage on the magnetoresistance oscillations were examined. In the last part of this thesis, we have fabricated and characterized the single crystal Au nanowire-based proximity superconducting quantum interference device (SQUID).

Focused ion beam patterning to dielectrophoretically assemble single nanowire based devices

International Nuclear Information System (INIS)

La Ferrara, V; Massera, E; Francia, G Di; Alfano, B

2010-01-01

Direct-write processing is increasingly taking place in nanodevice fabrication. In this work, Focused Ion Beam (FIB), a powerful tool in maskless micromachining, is used for electrode patterning onto a silicon/silicon nitride substrate. Then a single palladium nanowire is assembled between electrodes by means of dielectrophoresis (DEP). The nanowire morphology depends on the electrode pattern when DEP conditions are fixed. FIB/DEP combination overcomes the problem of nanowire electrical contamination due to gallium ion bombardment and the as-grown nanowire retains its basic electrical properties. Single nanowire based devices have been fabricated with this novel approach and have been tested as hydrogen sensors, confirming the reliability of this technology.

Photovoltaic device on a single ZnO nanowire p–n homojunction

International Nuclear Information System (INIS)

Cho, Hak Dong; Zakirov, Anvar S; Yuldashev, Shavkat U; Kang, Tae Won; Ahn, Chi Won; Yeo, Yung Kee

2012-01-01

A photovoltaic device was successfully grown solely based on the single ZnO p–n homojunction nanowire. The ZnO nanowire p–n diode consists of an as-grown n-type segment and an in situ arsenic-doped p-type segment. This p–n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased conditions. Our results demonstrate that the present ZnO p–n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nanoscale electronic, optoelectronic and medical devices. (paper)

Simulations of backgate sandwich nanowire MOSFETs with improved device performance

International Nuclear Information System (INIS)

Zhao Hengliang; Zhu Huilong; Zhong Jian; Ma Xiaolong; Wei Xing; Zhao Chao; Chen Dapeng; Ye Tianchun

2014-01-01

We propose a novel backgate sandwich nanowire MOSFET (SNFET), which offers the advantages of ETSOI (dynamic backgate voltage controllability) and nanowire FETs (good short channel effect). A backgate is used for threshold voltage (V t ) control of the SNFET. Compared with a backgate FinFET with a punch-through stop layer (PTSL), the SNFET possesses improved device performance. 3D device simulations indicate that the SNFET has a three times larger overdrive current, a ∼75% smaller off leakage current, and reduced subthreshold swing (SS) and DIBL than those of a backgate FinFET when the nanowire (NW) and the fin are of equal width. A new process flow to fabricate the backgate SNFET is also proposed in this work. Our analytical model suggests that V t control by the backgate can be attributed to the capacitances formed by the frontgate, NW, and backgate. The SNFET devices are compatible with the latest state-of-the-art high-k/metal gate CMOS technology with the unique capability of independent backgate control for nFETs and pFETs, which is promising for sub-22 nm scaling down. (semiconductor devices)

Scalable Coating and Properties of Transparent, Flexible, Silver Nanowire Electrodes

KAUST Repository

Hu, Liangbing

2010-05-25

We report a comprehensive study of transparent and conductive silver nanowire (Ag NW) electrodes, including a scalable fabrication process, morphologies, and optical, mechanical adhesion, and flexibility properties, and various routes to improve the performance. We utilized a synthesis specifically designed for long and thin wires for improved performance in terms of sheet resistance and optical transmittance. Twenty Ω/sq and ∼ 80% specular transmittance, and 8 ohms/sq and 80% diffusive transmittance in the visible range are achieved, which fall in the same range as the best indium tin oxide (ITO) samples on plastic substrates for flexible electronics and solar cells. The Ag NW electrodes show optical transparencies superior to ITO for near-infrared wavelengths (2-fold higher transmission). Owing to light scattering effects, the Ag NW network has the largest difference between diffusive transmittance and specular transmittance when compared with ITO and carbon nanotube electrodes, a property which could greatly enhance solar cell performance. A mechanical study shows that Ag NW electrodes on flexible substrates show excellent robustness when subjected to bending. We also study the electrical conductance of Ag nanowires and their junctions and report a facile electrochemical method for a Au coating to reduce the wire-to-wire junction resistance for better overall film conductance. Simple mechanical pressing was also found to increase the NW film conductance due to the reduction of junction resistance. The overall properties of transparent Ag NW electrodes meet the requirements of transparent electrodes for many applications and could be an immediate ITO replacement for flexible electronics and solar cells. © 2010 American Chemical Society.

Scalable Coating and Properties of Transparent, Flexible, Silver Nanowire Electrodes

KAUST Repository

Hu, Liangbing; Kim, Han Sun; Lee, Jung-Yong; Peumans, Peter; Cui, Yi

2010-01-01

We report a comprehensive study of transparent and conductive silver nanowire (Ag NW) electrodes, including a scalable fabrication process, morphologies, and optical, mechanical adhesion, and flexibility properties, and various routes to improve the performance. We utilized a synthesis specifically designed for long and thin wires for improved performance in terms of sheet resistance and optical transmittance. Twenty Ω/sq and ∼ 80% specular transmittance, and 8 ohms/sq and 80% diffusive transmittance in the visible range are achieved, which fall in the same range as the best indium tin oxide (ITO) samples on plastic substrates for flexible electronics and solar cells. The Ag NW electrodes show optical transparencies superior to ITO for near-infrared wavelengths (2-fold higher transmission). Owing to light scattering effects, the Ag NW network has the largest difference between diffusive transmittance and specular transmittance when compared with ITO and carbon nanotube electrodes, a property which could greatly enhance solar cell performance. A mechanical study shows that Ag NW electrodes on flexible substrates show excellent robustness when subjected to bending. We also study the electrical conductance of Ag nanowires and their junctions and report a facile electrochemical method for a Au coating to reduce the wire-to-wire junction resistance for better overall film conductance. Simple mechanical pressing was also found to increase the NW film conductance due to the reduction of junction resistance. The overall properties of transparent Ag NW electrodes meet the requirements of transparent electrodes for many applications and could be an immediate ITO replacement for flexible electronics and solar cells. © 2010 American Chemical Society.

Synthesis and properties of silicon nanowire devices

Science.gov (United States)

Byon, Kumhyo

Silicon nanowire (SiNW) is a very attractive one-dimensional material for future nanoelectronic applications. Reliable control of key field effect transistor (FET) parameters such as conductance, mobility, threshold voltage and on/off ratio is crucial to the applications of SiNW to working logic devices and integrated circuits. In this thesis, we fabricated silicon nanowire field effect transistors (SiNW FETs) and studied the dependence of their electrical transport properties upon various parameters including SiNW growth conditions, post-growth doping, and contact annealing. From these studies, we found how different processes control important FET characteristics. Key accomplishments of this thesis include p-channel enhancement mode FETs, n-channel FETs by post-growth vapor doping and high performance ambipolar devices. In the first part of this work, single crystalline SiNWs were synthesized by thermal evaporation without gold catalysts. FETs were fabricated using both as-grown SiNWs and post-growth n-doped SiNWs. FET from p-type source materials behaves as a p-channel enhancement mode FET which is predominant in logic devices due to its fast operation and low power consumption. Using bismuth vapor, the as-grown SiNWs were doped into n-type materials. The majority carriers in SiNWs can therefore be controlled by proper choice of the vapor phase dopant species. Post-growth doping using vapor phase is applicable to other nanowire systems. In the second part, high performance ambipolar FETs were fabricated. A two step annealing process was used to control the Schottky barrier between SiNW and metal contacts in order to enhance device performance. Initial p-channel SiNW FETs were converted into ambipolar SiNW FETs after contact annealing. Furthermore, significant increases in both on/off ratio and channel mobilities were achieved after contact annealing. Promising device structures to implement ambipolar devices into large scale integrated circuits were proposed

Flexible devices: from materials, architectures to applications

Science.gov (United States)

Zou, Mingzhi; Ma, Yue; Yuan, Xin; Hu, Yi; Liu, Jie; Jin, Zhong

2018-01-01

Flexible devices, such as flexible electronic devices and flexible energy storage devices, have attracted a significant amount of attention in recent years for their potential applications in modern human lives. The development of flexible devices is moving forward rapidly, as the innovation of methods and manufacturing processes has greatly encouraged the research of flexible devices. This review focuses on advanced materials, architecture designs and abundant applications of flexible devices, and discusses the problems and challenges in current situations of flexible devices. We summarize the discovery of novel materials and the design of new architectures for improving the performance of flexible devices. Finally, we introduce the applications of flexible devices as key components in real life. Project supported by the National Key R&D Program of China (Nos. 2017YFA0208200, 2016YFB0700600, 2015CB659300), the National Natural Science Foundation of China (Nos. 21403105, 21573108), and the Fundamental Research Funds for the Central Universities (No. 020514380107).

Nanowire-integrated microporous silicon membrane for continuous fluid transport in micro cooling device

International Nuclear Information System (INIS)

So, Hongyun; Pisano, Albert P.; Cheng, Jim C.

2013-01-01

We report an efficient passive micro pump system combining the physical properties of nanowires and micropores. This nanowire-integrated microporous silicon membrane was created to feed coolant continuously onto the surface of the wick in a micro cooling device to ensure it remains hydrated and in case of dryout, allow for regeneration of the system. The membrane was fabricated by photoelectrochemical etching to form micropores followed by hydrothermal growth of nanowires. This study shows a promising approach to address thermal management challenges for next generation electronic devices with absence of external power

A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires

Science.gov (United States)

Saranti, Konstantina; Alotaibi, Sultan; Paul, Shashi

2016-06-01

The work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devices. A detailed investigation of the suitability of silicon nanowires as the charge storage medium in two-terminal non-volatile memory devices are presented in this report. The deposition of the silicon nanostructures was carried out at low temperatures (less than 400 °C) using a previously developed a novel method within our research group. Two-terminal non-volatile (2TNV) memory devices and metal-insulator-semiconductor (MIS) structures containing the silicon nanowires were fabricated and an in-depth study of their characteristics was carried out using current-voltage and capacitance techniques.

A highly flexible platform for nanowire sensor assembly using a combination of optically induced and conventional dielectrophoresis.

Science.gov (United States)

Lin, Yen-Heng; Ho, Kai-Siang; Yang, Chin-Tien; Wang, Jung-Hao; Lai, Chao-Sung

2014-06-02

The number and position of assembled nanowires cannot be controlled using most nanowire sensor assembling methods. In this paper, we demonstrate a high-yield, highly flexible platform for nanowire sensor assembly using a combination of optically induced dielectrophoresis (ODEP) and conventional dielectrophoresis (DEP). With the ODEP platform, optical images can be used as virtual electrodes to locally turn on a non-contact DEP force and manipulate a micron- or nano-scale substance suspended in fluid. Nanowires were first moved next to the previously deposited metal electrodes using optical images and, then, were attracted to and arranged in the gap between two electrodes through DEP forces generated by switching on alternating current signals to the metal electrodes. A single nanowire can be assembled within 24 seconds using this approach. In addition, the number of nanowires in a single nanowire sensor can be controlled, and the assembly of a single nanowire on each of the adjacent electrodes can also be achieved. The electrical properties of the assembled nanowires were characterized by IV curve measurement. Additionally, the contact resistance between the nanowires and electrodes and the stickiness between the nanowires and substrates were further investigated in this study.

Conducting polymer nanowire arrays for high performance supercapacitors.

Science.gov (United States)

Wang, Kai; Wu, Haiping; Meng, Yuena; Wei, Zhixiang

2014-01-15

This Review provides a brief summary of the most recent research developments in the fabrication and application of one-dimensional ordered conducting polymers nanostructure (especially nanowire arrays) and their composites as electrodes for supercapacitors. By controlling the nucleation and growth process of polymerization, aligned conducting polymer nanowire arrays and their composites with nano-carbon materials can be prepared by employing in situ chemical polymerization or electrochemical polymerization without a template. This kind of nanostructure (such as polypyrrole and polyaniline nanowire arrays) possesses high capacitance, superior rate capability ascribed to large electrochemical surface, and an optimal ion diffusion path in the ordered nanowire structure, which is proved to be an ideal electrode material for high performance supercapacitors. Furthermore, flexible, micro-scale, threadlike, and multifunctional supercapacitors are introduced based on conducting polyaniline nanowire arrays and their composites. These prototypes of supercapacitors utilize the high flexibility, good processability, and large capacitance of conducting polymers, which efficiently extend the usage of supercapacitors in various situations, and even for a complicated integration system of different electronic devices. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Highly ordered nanowire arrays on plastic substrates for ultrasensitive flexible chemical sensors.

Science.gov (United States)

McAlpine, Michael C; Ahmad, Habib; Wang, Dunwei; Heath, James R

2007-05-01

The development of a robust method for integrating high-performance semiconductors on flexible plastics could enable exciting avenues in fundamental research and novel applications. One area of vital relevance is chemical and biological sensing, which if implemented on biocompatible substrates, could yield breakthroughs in implantable or wearable monitoring systems. Semiconducting nanowires (and nanotubes) are particularly sensitive chemical sensors because of their high surface-to-volume ratios. Here, we present a scalable and parallel process for transferring hundreds of pre-aligned silicon nanowires onto plastic to yield highly ordered films for low-power sensor chips. The nanowires are excellent field-effect transistors, and, as sensors, exhibit parts-per-billion sensitivity to NO2, a hazardous pollutant. We also use SiO2 surface chemistries to construct a 'nano-electronic nose' library, which can distinguish acetone and hexane vapours via distributed responses. The excellent sensing performance coupled with bendable plastic could open up opportunities in portable, wearable or even implantable sensors.

Highly ordered nanowire arrays on plastic substrates for ultrasensitive flexible chemical sensors

Science.gov (United States)

McAlpine, Michael C.; Ahmad, Habib; Wang, Dunwei; Heath, James R.

2007-05-01

The development of a robust method for integrating high-performance semiconductors on flexible plastics could enable exciting avenues in fundamental research and novel applications. One area of vital relevance is chemical and biological sensing, which if implemented on biocompatible substrates, could yield breakthroughs in implantable or wearable monitoring systems. Semiconducting nanowires (and nanotubes) are particularly sensitive chemical sensors because of their high surface-to-volume ratios. Here, we present a scalable and parallel process for transferring hundreds of pre-aligned silicon nanowires onto plastic to yield highly ordered films for low-power sensor chips. The nanowires are excellent field-effect transistors, and, as sensors, exhibit parts-per-billion sensitivity to NO2, a hazardous pollutant. We also use SiO2 surface chemistries to construct a `nano-electronic nose' library, which can distinguish acetone and hexane vapours via distributed responses. The excellent sensing performance coupled with bendable plastic could open up opportunities in portable, wearable or even implantable sensors.

Flexible magnetic thin films and devices

Science.gov (United States)

Sheng, Ping; Wang, Baomin; Li, Runwei

2018-01-01

Flexible electronic devices are highly attractive for a variety of applications such as flexible circuit boards, solar cells, paper-like displays, and sensitive skin, due to their stretchable, biocompatible, light-weight, portable, and low cost properties. Due to magnetic devices being important parts of electronic devices, it is essential to study the magnetic properties of magnetic thin films and devices fabricated on flexible substrates. In this review, we mainly introduce the recent progress in flexible magnetic thin films and devices, including the study on the stress-dependent magnetic properties of magnetic thin films and devices, and controlling the properties of flexible magnetic films by stress-related multi-fields, and the design and fabrication of flexible magnetic devices. Project supported by the National Key R&D Program of China (No. 2016YFA0201102), the National Natural Science Foundation of China (Nos. 51571208, 51301191, 51525103, 11274321, 11474295, 51401230), the Youth Innovation Promotion Association of the Chinese Academy of Sciences (No. 2016270), the Key Research Program of the Chinese Academy of Sciences (No. KJZD-EW-M05), the Ningbo Major Project for Science and Technology (No. 2014B11011), the Ningbo Science and Technology Innovation Team (No. 2015B11001), and the Ningbo Natural Science Foundation (No. 2015A610110).

Flexible spin-orbit torque devices

Energy Technology Data Exchange (ETDEWEB)

Lee, OukJae; You, Long; Jang, Jaewon; Subramanian, Vivek [Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720 (United States); Salahuddin, Sayeef [Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

2015-12-21

We report on state-of-the-art spintronic devices synthesized and fabricated directly on a flexible organic substrate. Large perpendicular magnetic anisotropy was achieved in ultrathin ferromagnetic heterostructures of Pt/Co/MgO sputtered on a non-rigid plastic substrate at room temperature. Subsequently, a full magnetic reversal of the Co was observed by exploiting the spin orbit coupling in Pt that leads to a spin accumulation at the Pt/Co interface when an in-plane current is applied. Quasi-static measurements show the potential for operating these devices at nano-second speeds. Importantly, the behavior of the devices remained unchanged under varying bending conditions (up to a bending radius of ≈ ±20–30 mm). Furthermore, the devices showed robust operation even after application of 10{sup 6} successive pulses, which is likely sufficient for many flexible applications. Thus, this work demonstrates the potential for integrating high performance spintronic devices on flexible substrates, which could lead to many applications ranging from flexible non-volatile magnetic memory to local magnetic resonance imaging.

Flexible spin-orbit torque devices

International Nuclear Information System (INIS)

Lee, OukJae; You, Long; Jang, Jaewon; Subramanian, Vivek; Salahuddin, Sayeef

2015-01-01

We report on state-of-the-art spintronic devices synthesized and fabricated directly on a flexible organic substrate. Large perpendicular magnetic anisotropy was achieved in ultrathin ferromagnetic heterostructures of Pt/Co/MgO sputtered on a non-rigid plastic substrate at room temperature. Subsequently, a full magnetic reversal of the Co was observed by exploiting the spin orbit coupling in Pt that leads to a spin accumulation at the Pt/Co interface when an in-plane current is applied. Quasi-static measurements show the potential for operating these devices at nano-second speeds. Importantly, the behavior of the devices remained unchanged under varying bending conditions (up to a bending radius of ≈ ±20–30 mm). Furthermore, the devices showed robust operation even after application of 10 6 successive pulses, which is likely sufficient for many flexible applications. Thus, this work demonstrates the potential for integrating high performance spintronic devices on flexible substrates, which could lead to many applications ranging from flexible non-volatile magnetic memory to local magnetic resonance imaging

Ballistic transport and quantum interference in InSb nanowire devices

International Nuclear Information System (INIS)

Li Sen; Huang Guang-Yao; Guo Jing-Kun; Kang Ning; Xu Hong-Qi; Caroff, Philippe

2017-01-01

An experimental realization of a ballistic superconductor proximitized semiconductor nanowire device is a necessary step towards engineering topological quantum electronics. Here, we report on ballistic transport in InSb nanowires grown by molecular-beam epitaxy contacted by superconductor electrodes. At an elevated temperature, clear conductance plateaus are observed at zero magnetic field and in agreement with calculations based on the Landauer formula. At lower temperature, we have observed characteristic Fabry–Pérot patterns which confirm the ballistic nature of charge transport. Furthermore, the magnetoconductance measurements in the ballistic regime reveal a periodic variation related to the Fabry–Pérot oscillations. The result can be reasonably explained by taking into account the impact of magnetic field on the phase of ballistic electron’s wave function, which is further verified by our simulation. Our results pave the way for better understanding of the quantum interference effects on the transport properties of InSb nanowires in the ballistic regime as well as developing of novel device for topological quantum computations. (paper)

Materials and Devices Research of PPV-ZnO Nanowires for Heterojunction Solar Cells

Directory of Open Access Journals (Sweden)

Zhang Xiao-Zhou

2012-01-01

Full Text Available Bulk heterojunction photovoltaic devices, which use the conjugated polymer poly(2-methoxyl-5-(2′-ethylhexyloxy-1,4-phenylenevinylene (MEH-PPV as the electron donor and crystalline ZnO nanowires as the electron acceptor, have been studied in this work. The ZnO nanowires were prepared through a chemical vapor deposition mechanism. The dissolved MEH-PPV polymer was spin-coated onto the nanowires. The scanning electron microscope images showed that the ZnO nanowires were covered with a single layer of the polymer, and these materials were used to design a heterojunction solar cell. This solar cell displayed improved performance compared with the devices that were made from only the MEH-PPV polymer. This observed improvement is correlated with the improved electron transport that is perpendicular to the plane of the film. A solar power conversion efficiency of 1.37% was achieved under an AM1.5 illumination.

Two-beam laser fabrication technique and the application for fabricating conductive silver nanowire on flexible substrate

Directory of Open Access Journals (Sweden)

Gui-Cang He

2017-03-01

Full Text Available In this study, a two-beam laser fabrication technique is proposed to fabricate silver nanowire (AgNW on the polyethylene terephthalate (PET substrate. The femtosecond pulse laser in the technique plays a role in generating Ag nanoparticles from the silver aqueous solution by multiphoton photoreduction. The continuous wave (CW laser of the technique works as optical tweezers, and make the Ag nanoparticles gather to a continuous AgNW by the optical trapping force. The optical trapping force of the CW laser was calculated under our experimental condition. The flexibility and the resistance stability of the AgNW that fabricated by this technique are very excellent. Compared to the resistance of the AgNW without bending, the decreasing rate of the AgNW resistance is about 16% under compressed bending condition at the radius of 1 mm, and the increasing rate of the AgNW resistance is only 1.3% after the AgNW bended about 3500 times at the bending radius of 1 mm. The study indicates that the AgNW is promising for achieving flexible device and would promote the development of the flexible electronics.

GaN Nanowire Devices: Fabrication and Characterization

Science.gov (United States)

Scott, Reum

The development of microelectronics in the last 25 years has been characterized by an exponential increase of the bit density in integrated circuits (ICs) with time. Scaling solid-state devices improves cost, performance, and power; as such, it is of particular interest for companies, who gain a market advantage with the latest technology. As a result, the microelectronics industry has driven transistor feature size scaling from 10 μm to ~30 nm during the past 40 years. This trend has persisted for 40 years due to optimization, new processing techniques, device structures, and materials. But when noting processor speeds from the 1970's to 2009 and then again in 2010, the implication would be that the trend has ceased. To address the challenge of shrinking the integrated circuit (IC), current research is centered on identifying new materials and devices that can supplement and/or potentially supplant it. Bottom-up methods tailor nanoscale building blocks---atoms, molecules, quantum dots, and nanowires (NWs)---to be used to overcome these limitations. The Group IIIA nitrides (InN, AlN, and GaN) possess appealing properties such as a direct band gap spanning the whole solar spectrum, high saturation velocity, and high breakdown electric field. As a result nanostructures and nanodevices made from GaN and related nitrides are suitable candidates for efficient nanoscale UV/ visible light emitters, detectors, and gas sensors. To produce devices with such small structures new fabrication methods must be implemented. Devices composed of GaN nanowires were fabricated using photolithography and electron beam lithography. The IV characteristics of these devices were noted under different illuminations and the current tripled from 4.8*10-7 A to 1.59*10 -6 A under UV light which persisted for at least 5hrs.

The fabrication of ZnO nanowire field-effect transistors combining dielectrophoresis and hot-pressing

International Nuclear Information System (INIS)

Chang, Y-K; Chau-N H, Franklin

2009-01-01

Zinc oxide nanowire field-effect transistors (NW-FETs) were fabricated combining the dielectrophoresis (DEP) and the hot-pressing methods. DEP was used to position both ends of the nanowires on top of the source and the drain electrodes, respectively. Hot-pressing of nanowires on the electrodes was then employed to ensure good contacts between the nanowires and the electrodes. The good device performance achieved with our method of fabrication indicates that DEP combined with hot-pressing has the potential to be applied to the fabrication of flexible electronics on a roll-to-roll basis.

Au nanowire junction breakup through surface atom diffusion

Science.gov (United States)

Vigonski, Simon; Jansson, Ville; Vlassov, Sergei; Polyakov, Boris; Baibuz, Ekaterina; Oras, Sven; Aabloo, Alvo; Djurabekova, Flyura; Zadin, Vahur

2018-01-01

Metallic nanowires are known to break into shorter fragments due to the Rayleigh instability mechanism. This process is strongly accelerated at elevated temperatures and can completely hinder the functioning of nanowire-based devices like e.g. transparent conductive and flexible coatings. At the same time, arranged gold nanodots have important applications in electrochemical sensors. In this paper we perform a series of annealing experiments of gold and silver nanowires and nanowire junctions at fixed temperatures 473, 673, 873 and 973 K (200 °C, 400 °C, 600 °C and 700 °C) during a time period of 10 min. We show that nanowires are especially prone to fragmentation around junctions and crossing points even at comparatively low temperatures. The fragmentation process is highly temperature dependent and the junction region breaks up at a lower temperature than a single nanowire. We develop a gold parametrization for kinetic Monte Carlo simulations and demonstrate the surface diffusion origin of the nanowire junction fragmentation. We show that nanowire fragmentation starts at the junctions with high reliability and propose that aligning nanowires in a regular grid could be used as a technique for fabricating arrays of nanodots.

Movable MEMS Devices on Flexible Silicon

KAUST Repository

Ahmed, Sally

2013-01-01

Flexible electronics have gained great attention recently. Applications such as flexible displays, artificial skin and health monitoring devices are a few examples of this technology. Looking closely at the components of these devices, although MEMS

A versatile method to grow localized arrays of nanowires for highly sensitive capacitive devices

DEFF Research Database (Denmark)

Antohe, V.A.; Radu, A.; Yunus, S.

2008-01-01

We propose a new approach to increase the detection efficiency of the capacitive sensing devices, by growing vertically aligned nanowires arrays, localized and confined on small interdigited electrodes structures. The metallic tracks are made using optical lithography, and the nanowires are reali...

Transparent, double-sided, ITO-free, flexible dye-sensitized solar cells based on metal wire/ZnO nanowire arrays

Energy Technology Data Exchange (ETDEWEB)

Wang, Wei; Zhao, Qing; Li, Heng; Yu, Dapeng [State Key Laboratory for Mesoscopic Physics and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871 (China); Wu, Hongwei; Zou, Dechun [Beijing National Laboratory for Molecular Sciences, Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China)

2012-07-10

Transparent, double-sided, flexible, ITO-free dye-sensitized solar cells (DSSCs) are fabricated in a simple, facile, and controllable way. Highly ordered, high-crystal-quality, high-density ZnO nanowire arrays are radially grown on stainless steel, Au, Ag, and Cu microwires, which serve as working electrodes. Pt wires serve as the counter electrodes. Two metal wires are encased in electrolyte between two poly(ethylene terephthalate) (PET) films (or polydimethylsiloxane (PDMS) films) to render the device both flexible and highly transparent. The effect of the dye thickness on the photovoltaic performance of the DSSCs as a function of dye-loading time is investigated systematically. Shorter dye-loading times lead to thinner dye layers and better device performance. A dye-loading time of 20 min results in the best device performance. An oxidation treatment of the metal wires is developed effectively to avoid the galvanic-battery effect found in the experiment, which is crucial for real applications of double-metal-wire DSSC configurations. The device shows very good transparency and can increase sunlight use efficiency through two-sided illumination. The double-wire DSSCs remain stable for a long period of time and can be bent at large angles, up to 107 , reversibly, without any loss of performance. The double-wire-PET, planar solar-cell configuration can be used as window stickers and can be readily realized for large-area-weave roll-to-roll processing. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Fabrication of flexible silver nanowire conductive films and transmittance improvement based on moth-eye nanostructure array

Science.gov (United States)

Zhang, Chengpeng; Zhu, Yuwen; Yi, Peiyun; Peng, Linfa; Lai, Xinmin

2017-07-01

Transparent conductive electrodes (TCEs) are widely used in optoelectronic devices, such as touch screens, liquid-crystal displays and light-emitting diodes. To date, the material of the most commonly used TCEs was indium-tin oxide (ITO), which had several intrinsic drawbacks that limited its applications in the long term, including relatively high material cost and brittleness. Silver nanowire (AgNW), as one of the alternative materials for ITO TCEs, has already gained much attention all over the world. In this paper, we reported a facile method to greatly enhance the transmittance of the AgNW TCEs without reducing the electrical conductivity based on moth-eye nanostructures, and the moth-eye nanostructures were fabricated by using a roll-to-roll ultraviolet nanoimprint lithography process. Besides, the effects of mechanical pressure and bending on the moth-eye nanostructure layer were also investigated. In the research, the optical transmittance of the flexible AgNW TCEs was enhanced from 81.3% to 86.0% by attaching moth-eye nanostructures onto the other side of the flexible polyethylene terephthalate substrate while the electrical conductivity of the AgNW TCEs was not sacrificed. This research can provide a direction for the cost-effective fabrication of moth-eye nanostructures and the transmittance improvement of the flexible transparent electrodes.

Fabrication of flexible silver nanowire conductive films and transmittance improvement based on moth-eye nanostructure array

International Nuclear Information System (INIS)

Zhang, Chengpeng; Zhu, Yuwen; Yi, Peiyun; Peng, Linfa; Lai, Xinmin

2017-01-01

Transparent conductive electrodes (TCEs) are widely used in optoelectronic devices, such as touch screens, liquid-crystal displays and light-emitting diodes. To date, the material of the most commonly used TCEs was indium-tin oxide (ITO), which had several intrinsic drawbacks that limited its applications in the long term, including relatively high material cost and brittleness. Silver nanowire (AgNW), as one of the alternative materials for ITO TCEs, has already gained much attention all over the world. In this paper, we reported a facile method to greatly enhance the transmittance of the AgNW TCEs without reducing the electrical conductivity based on moth-eye nanostructures, and the moth-eye nanostructures were fabricated by using a roll-to-roll ultraviolet nanoimprint lithography process. Besides, the effects of mechanical pressure and bending on the moth-eye nanostructure layer were also investigated. In the research, the optical transmittance of the flexible AgNW TCEs was enhanced from 81.3% to 86.0% by attaching moth-eye nanostructures onto the other side of the flexible polyethylene terephthalate substrate while the electrical conductivity of the AgNW TCEs was not sacrificed. This research can provide a direction for the cost-effective fabrication of moth-eye nanostructures and the transmittance improvement of the flexible transparent electrodes. (paper)

Nanowire decorated, ultra-thin, single crystalline silicon for photovoltaic devices.

Science.gov (United States)

Aurang, Pantea; Turan, Rasit; Unalan, Husnu Emrah

2017-10-06

Reducing silicon (Si) wafer thickness in the photovoltaic industry has always been demanded for lowering the overall cost. Further benefits such as short collection lengths and improved open circuit voltages can also be achieved by Si thickness reduction. However, the problem with thin films is poor light absorption. One way to decrease optical losses in photovoltaic devices is to minimize the front side reflection. This approach can be applied to front contacted ultra-thin crystalline Si solar cells to increase the light absorption. In this work, homojunction solar cells were fabricated using ultra-thin and flexible single crystal Si wafers. A metal assisted chemical etching method was used for the nanowire (NW) texturization of ultra-thin Si wafers to compensate weak light absorption. A relative improvement of 56% in the reflectivity was observed for ultra-thin Si wafers with the thickness of 20 ± 0.2 μm upon NW texturization. NW length and top contact optimization resulted in a relative enhancement of 23% ± 5% in photovoltaic conversion efficiency.

Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors

Science.gov (United States)

Spies, Maria; Polaczyński, Jakub; Ajay, Akhil; Kalita, Dipankar; Luong, Minh Anh; Lähnemann, Jonas; Gayral, Bruno; den Hertog, Martien I.; Monroy, Eva

2018-06-01

Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are characterized by ultrahigh photocurrent gain, but their photoresponse scales sublinearly with the optical power. Here, we present a study of single-nanowire photodetectors displaying a linear response to ultraviolet illumination. Their structure consists of a GaN nanowire incorporating an AlN/GaN/AlN heterostructure, which generates an internal electric field. The activity of the heterostructure is confirmed by the rectifying behavior of the current–voltage characteristics in the dark, as well as by the asymmetry of the photoresponse in magnitude and linearity. Under reverse bias (negative bias on the GaN cap segment), the detectors behave linearly with the impinging optical power when the nanowire diameter is below a certain threshold (≈80 nm), which corresponds to the total depletion of the nanowire stem due to the Fermi level pinning at the sidewalls. In the case of nanowires that are only partially depleted, their nonlinearity is explained by a nonlinear variation of the diameter of their central conducting channel under illumination.

Rapid Hydrothermal Synthesis of Zinc Oxide Nanowires by Annealing Methods on Seed Layers

Directory of Open Access Journals (Sweden)

Jang Bo Shim

2011-01-01

Full Text Available Well-aligned zinc oxide (ZnO nanowire arrays were successfully synthesized on a glass substrate using the rapid microwave heating process. The ZnO seed layers were produced by spinning the precursor solutions onto the substrate. Among coatings, the ZnO seed layers were annealed at 100°C for 5 minutes to ensure particle adhesion to the glass surface in air, nitrogen, and vacuum atmospheres. The annealing treatment of the ZnO seed layer was most important for achieving the high quality of ZnO nanowire arrays as ZnO seed nanoparticles of larger than 30 nm in diameter evolve into ZnO nanowire arrays. Transmission electron microscopy analysis revealed a single-crystalline lattice of the ZnO nanowires. Because of their low power (140 W, low operating temperatures (90°C, easy fabrication (variable microwave sintering system, and low cost (90% cost reduction compared with gas condensation methods, high quality ZnO nanowires created with the rapid microwave heating process show great promise for use in flexible solar cells and flexible display devices.

Flexible energy-storage devices: design consideration and recent progress.

Science.gov (United States)

Wang, Xianfu; Lu, Xihong; Liu, Bin; Chen, Di; Tong, Yexiang; Shen, Guozhen

2014-07-23

Flexible energy-storage devices are attracting increasing attention as they show unique promising advantages, such as flexibility, shape diversity, light weight, and so on; these properties enable applications in portable, flexible, and even wearable electronic devices, including soft electronic products, roll-up displays, and wearable devices. Consequently, considerable effort has been made in recent years to fulfill the requirements of future flexible energy-storage devices, and much progress has been witnessed. This review describes the most recent advances in flexible energy-storage devices, including flexible lithium-ion batteries and flexible supercapacitors. The latest successful examples in flexible lithium-ion batteries and their technological innovations and challenges are reviewed first. This is followed by a detailed overview of the recent progress in flexible supercapacitors based on carbon materials and a number of composites and flexible micro-supercapacitors. Some of the latest achievements regarding interesting integrated energy-storage systems are also reviewed. Further research direction is also proposed to surpass existing technological bottle-necks and realize idealized flexible energy-storage devices. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Flexible Transparent Supercapacitors Based on Hierarchical Nanocomposite Films.

Science.gov (United States)

Chen, Fanhong; Wan, Pengbo; Xu, Haijun; Sun, Xiaoming

2017-05-31

Flexible transparent electronic devices have recently gained immense popularity in smart wearable electronics and touch screen devices, which accelerates the development of the portable power sources with reliable flexibility, robust transparency and integration to couple these electronic devices. For potentially coupled as energy storage modules in various flexible, transparent and portable electronics, the flexible transparent supercapacitors are developed and assembled from hierarchical nanocomposite films of reduced graphene oxide (rGO) and aligned polyaniline (PANI) nanoarrays upon their synergistic advantages. The nanocomposite films are fabricated from in situ PANI nanoarrays preparation in a blended solution of aniline monomers and rGO onto the flexible, transparent, and stably conducting film (FTCF) substrate, which is obtained by coating silver nanowires (Ag NWs) layer with Meyer rod and then coating of rGO layer on polyethylene terephthalate (PET) substrate. Optimization of the transparency, the specific capacitance, and the flexibility resulted in the obtained all-solid state nanocomposite supercapacitors exhibiting enhanced capacitance performance, good cycling stability, excellent flexibility, and superior transparency. It provides promising application prospects for exploiting flexible, low-cost, transparent, and high-performance energy storage devices to be coupled into various flexible, transparent, and wearable electronic devices.

Growth and Characterisation of GaAs/AlGaAs Core-shell Nanowires for Optoelectronic Device Applications

Science.gov (United States)

Jiang, Nian

III-V semiconductor nanowires have been investigated as key components for future electronic and optoelectronic devices and systems due to their direct band gap and high electron mobility. Amongst the III-V semiconductors, the planar GaAs material system has been extensively studied and used in industries. Accordingly, GaAs nanowires are the prime candidates for nano-scale devices. However, the electronic performance of GaAs nanowires has yet to match that of state-of-the-art planar GaAs devices. The present deficiency of GaAs nanowires is typically attributed to the large surface-to- volume ratio and the tendency for non-radiative recombination centres to form at the surface. The favoured solution of this problem is by coating GaAs nanowires with AlGaAs shells, which replaces the GaAs surface with GaAs/AlGaAs interface. This thesis presents a systematic study of GaAs/AlGaAs core-shell nanowires grown by metal organic chemical vapour deposition (MOCVD), including understanding the growth, and characterisation of their structural and optical properties. The structures of the nanowires were mainly studied by scanning electron microscopy and transmis- sion electron microscopy (TEM). A procedure of microtomy was developed to prepare the cross-sectional samples for the TEM studies. The optical properties were charac- terised by photoluminescence (PL) spectroscopy. Carrier lifetimes were measured by time-resolved PL. The growth of AlGaAs shell was optimised to obtain the best optical properties, e.g. the strongest PL emission and the longest minority carrier lifetimes. (Abstract shortened by ProQuest.).

Formation of ultralong copper nanowires by hydrothermal growth for transparent conducting applications

Science.gov (United States)

Balela, Mary Donnabelle L.; Tan, Michael

2017-07-01

Transparent conducting electrodes are key components of optoelectronic devices, such as touch screens, organic light emitting diodes (OLEDs) and solar cells. Recent market surveys have shown that the demands for these devices are rapidly growing at a tremendous rate. Semiconducting oxides, in particular indium tin oxide (ITO) are the material of choice for transparent conducting electrodes. However, these conventional oxides are typically brittle, which limits their applicability in flexible electronics. Metal nanowires, e.g. copper (Cu) nanowires, are considered as the best candidate as substitute for ITO due to their excellent mechanical and electrical properties. In this paper, ultralong copper (Cu) nanowires with were successfully prepared by hydrothermal growth at 50-80°C for 1 h. Ethylenediamine was employed as the structure-directing agents, while hydrazine was used as the reductant. In situ mixed potential measurement was also carried out to monitor Cu deposition. Higher temperature shifted the mixed potential negatively, leading to thicker Cu nanowires. Transparent conducting electrode, with a sheet resistance of 197 Ω sq-1 at an optical transmittance of around 61 %, was fabricated with the Cu nanowire ink.

Nature-Inspired Structural Materials for Flexible Electronic Devices.

Science.gov (United States)

Liu, Yaqing; He, Ke; Chen, Geng; Leow, Wan Ru; Chen, Xiaodong

2017-10-25

Exciting advancements have been made in the field of flexible electronic devices in the last two decades and will certainly lead to a revolution in peoples' lives in the future. However, because of the poor sustainability of the active materials in complex stress environments, new requirements have been adopted for the construction of flexible devices. Thus, hierarchical architectures in natural materials, which have developed various environment-adapted structures and materials through natural selection, can serve as guides to solve the limitations of materials and engineering techniques. This review covers the smart designs of structural materials inspired by natural materials and their utility in the construction of flexible devices. First, we summarize structural materials that accommodate mechanical deformations, which is the fundamental requirement for flexible devices to work properly in complex environments. Second, we discuss the functionalities of flexible devices induced by nature-inspired structural materials, including mechanical sensing, energy harvesting, physically interacting, and so on. Finally, we provide a perspective on newly developed structural materials and their potential applications in future flexible devices, as well as frontier strategies for biomimetic functions. These analyses and summaries are valuable for a systematic understanding of structural materials in electronic devices and will serve as inspirations for smart designs in flexible electronics.

High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.

Science.gov (United States)

Van, Ngoc Huynh; Lee, Jae-Hyun; Sohn, Jung Inn; Cha, Seung Nam; Whang, Dongmok; Kim, Jong Min; Kang, Dae Joon

2014-05-21

We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary metal-oxide semiconductor (CMOS) inverter devices. This low-voltage operation was accomplished by controlling the threshold voltage of the n-type Si NWFETs through effective management of the nanowire (NW) doping concentration, while realizing high voltage gain (>10) and ultra-low static power dissipation (≤3 pW) for high-performance digital inverter devices. This result offers a viable means of fabricating high-performance, low-operation voltage, and high-density digital logic circuits using a low-temperature fabrication processing technique suitable for next-generation flexible electronics.

Flexible Piezoelectric-Induced Pressure Sensors for Static Measurements Based on Nanowires/Graphene Heterostructures.

Science.gov (United States)

Chen, Zefeng; Wang, Zhao; Li, Xinming; Lin, Yuxuan; Luo, Ningqi; Long, Mingzhu; Zhao, Ni; Xu, Jian-Bin

2017-05-23

The piezoelectric effect is widely applied in pressure sensors for the detection of dynamic signals. However, these piezoelectric-induced pressure sensors have challenges in measuring static signals that are based on the transient flow of electrons in an external load as driven by the piezopotential arisen from dynamic stress. Here, we present a pressure sensor with nanowires/graphene heterostructures for static measurements based on the synergistic mechanisms between strain-induced polarization charges in piezoelectric nanowires and the caused change of carrier scattering in graphene. Compared to the conventional piezoelectric nanowire or graphene pressure sensors, this sensor is capable of measuring static pressures with a sensitivity of up to 9.4 × 10 -3 kPa -1 and a fast response time down to 5-7 ms. This demonstration of pressure sensors shows great potential in the applications of electronic skin and wearable devices.

One-dimensional CuO nanowire: synthesis, electrical, and optoelectronic devices application

Science.gov (United States)

Luo, Lin-Bao; Wang, Xian-He; Xie, Chao; Li, Zhong-Jun; Lu, Rui; Yang, Xiao-Bao; Lu, Jian

2014-11-01

In this work, we presented a surface mechanical attrition treatment (SMAT)-assisted approach to the synthesis of one-dimensional copper oxide nanowires (CuO NWs) for nanodevices applications. The as-prepared CuO NWs have diameter and the length of 50 ~ 200 nm and 5 ~ 20 μm, respectively, with a preferential growth orientation along [1 [InlineEquation not available: see fulltext.] 0] direction. Interestingly, nanofield-effect transistor (nanoFET) based on individual CuO NW exhibited typical p-type electrical conduction, with a hole mobility of 0.129 cm2V-1 s-1 and hole concentration of 1.34 × 1018 cm-3, respectively. According to first-principle calculations, such a p-type electrical conduction behavior was related to the oxygen vacancies in CuO NWs. What is more, the CuO NW device was sensitive to visible light illumination with peak sensitivity at 600 nm. The responsitivity, conductive gain, and detectivity are estimated to be 2.0 × 102 A W-1, 3.95 × 102 and 6.38 × 1011 cm Hz1/2 W-1, respectively, which are better than the devices composed of other materials. Further study showed that nanophotodetectors assembled on flexible polyethylene terephthalate (PET) substrate can work under different bending conditions with good reproducibility. The totality of the above results suggests that the present CuO NWs are potential building blocks for assembling high-performance optoelectronic devices.

Movable MEMS Devices on Flexible Silicon

KAUST Repository

Ahmed, Sally

2013-05-05

Flexible electronics have gained great attention recently. Applications such as flexible displays, artificial skin and health monitoring devices are a few examples of this technology. Looking closely at the components of these devices, although MEMS actuators and sensors can play critical role to extend the application areas of flexible electronics, fabricating movable MEMS devices on flexible substrates is highly challenging. Therefore, this thesis reports a process for fabricating free standing and movable MEMS devices on flexible silicon substrates; MEMS flexure thermal actuators have been fabricated to illustrate the viability of the process. Flexure thermal actuators consist of two arms: a thin hot arm and a wide cold arm separated by a small air gap; the arms are anchored to the substrate from one end and connected to each other from the other end. The actuator design has been modified by adding etch holes in the anchors to suit the process of releasing a thin layer of silicon from the bulk silicon substrate. Selecting materials that are compatible with the release process was challenging. Moreover, difficulties were faced in the fabrication process development; for example, the structural layer of the devices was partially etched during silicon release although it was protected by aluminum oxide which is not attacked by the releasing gas . Furthermore, the thin arm of the thermal actuator was thinned during the fabrication process but optimizing the patterning and etching steps of the structural layer successfully solved this problem. Simulation was carried out to compare the performance of the original and the modified designs for the thermal actuators and to study stress and temperature distribution across a device. A fabricated thermal actuator with a 250 μm long hot arm and a 225 μm long cold arm separated by a 3 μm gap produced a deflection of 3 μm before silicon release, however, the fabrication process must be optimized to obtain fully functioning

Towards Flexibility Detection in Device-Level Energy Consumption

DEFF Research Database (Denmark)

Neupane, Bijay; Pedersen, Torben Bach; Thiesson, Bo

2014-01-01

The increasing drive towards green energy has boosted the installation of Renewable Energy Sources (RES). Increasing the share of RES in the power grid requires demand management by flexibility in the consumption. In this paper, we perform a state-of-the-art analysis on the flexibility and operat......The increasing drive towards green energy has boosted the installation of Renewable Energy Sources (RES). Increasing the share of RES in the power grid requires demand management by flexibility in the consumption. In this paper, we perform a state-of-the-art analysis on the flexibility...... and operation patterns of the devices in a set of real households. We propose a number of specific pre-processing steps such as operation stage segmentation, and aberrant operation duration removal to clean device level data. Further, we demonstrate various device operation properties such as hourly and daily...... regularities and patterns and the correlation between operating different devices. Subsequently, we show the existence of detectable time and energy flexibility in device operations. Finally, we provide various results providing a foundation for load- and flexibility-detection and -prediction at the device...

Recent advances in flexible and wearable organic optoelectronic devices

Science.gov (United States)

Zhu, Hong; Shen, Yang; Li, Yanqing; Tang, Jianxin

2018-01-01

Flexible and wearable optoelectronic devices have been developing to a new stage due to their unique capacity for the possibility of a variety of wearable intelligent electronics, including bendable smartphones, foldable touch screens and antennas, paper-like displays, and curved and flexible solid-state lighting devices. Before extensive commercial applications, some issues still have to be solved for flexible and wearable optoelectronic devices. In this regard, this review concludes the newly emerging flexible substrate materials, transparent conductive electrodes, device architectures and light manipulation methods. Examples of these components applied for various kinds of devices are also summarized. Finally, perspectives about the bright future of flexible and wearable electronic devices are proposed. Project supported by the Ministry of Science and Technology of China (No. 2016YFB0400700).

Flexible, silver nanowire network nickel hydroxide core-shell electrodes for supercapacitors

Science.gov (United States)

Yuksel, Recep; Coskun, Sahin; Kalay, Yunus Eren; Unalan, Husnu Emrah

2016-10-01

We present a novel one-dimensional coaxial architecture composed of silver nanowire (Ag NW) network core and nickel hydroxide (Ni(OH)2) shell for the realization of coaxial nanocomposite electrode materials for supercapacitors. Ag NWs are formed conductive networks via spray coating onto polyethylene terephthalate (PET) substrates and Ni(OH)2 is gradually electrodeposited onto the Ag NW network to fabricate core-shell electrodes for supercapacitors. Synergy of highly conductive Ag NWs and high capacitive Ni(OH)2 facilitate ion and electron transport, enhance electrochemical properties and result in a specific capacitance of 1165.2 F g-1 at a current density of 3 A g-1. After 3000 cycles, fabricated nanocomposite electrodes show 93% capacity retention. The rational design explored in this study points out the potential of nanowire based coaxial energy storage devices.

Mechanical response of CH3NH3PbI3 nanowires

Science.gov (United States)

Ćirić, L.; Ashby, K.; Abadie, T.; Spina, M.; Duchamp, M.; Náfrádi, B.; Kollár, M.; Forró, L.; Horváth, E.

2018-03-01

We report a systematic study of the mechanical response of methylammonium lead triiodide CH3NH3PbI3 nanowires by employing bending measurements using atomic force microscope on suspended wires over photo-lithographically patterned channels. Force-deflection curves measured at room temperature give a Young's modulus between 2 and 14 GPa. This broad range of values is attributed to the variations in the microcrystalline texture of halide perovskite nanowires. The mechanical response of a highly crystalline nanowire is linear with force and has a brittle character. The braking modulus of 48 ± 20 MPa corresponds to 100 μm of radius of curvature of the nanowires, rendering them much better structures for flexible devices than spin coated films. The measured moduli decrease rapidly if the NW is exposed to water vapor.

Flexible InGaN nanowire membranes for enhanced solar water splitting

KAUST Repository

Elafandy, Rami T.

2018-05-30

III-Nitride nanowires (NWs) have recently emerged as potential photoelectrodes for efficient solar hydrogen generation. While InGaN NWs epitaxy over silicon is required for high crystalline quality and economic production, it leads to the formation of the notorious silicon nitride insulating interface as well as low electrical conductivity which both impede excess charge carrier dynamics and overall device performance. We tackle this issue by developing, for the first time, a substrate-free InGaN NWs membrane photoanodes, through liftoff and transfer techniques, where excess charge carriers are efficiently extracted from the InGaN NWs through a proper ohmic contact formed with a high electrical conductivity metal stack membrane. As a result, compared to conventional InGaN NWs on silicon, the fabricated free-standing flexible membranes showed a 10-fold increase in the generated photocurrent as well as a 0.8 V cathodic shift in the onset potential. Through electrochemical impedance spectroscopy, accompanied with TEM-based analysis, we further demonstrated the detailed enhancement within excess charge carrier dynamics of the photoanode membranes. This novel configuration in photoelectrodes demonstrates a novel pathway for enhancing the performance of III-nitrides photoelectrodes to accelerate their commercialization for solar water splitting.

Aerosol jet printed silver nanowire transparent electrode for flexible electronic application

Science.gov (United States)

Tu, Li; Yuan, Sijian; Zhang, Huotian; Wang, Pengfei; Cui, Xiaolei; Wang, Jiao; Zhan, Yi-Qiang; Zheng, Li-Rong

2018-05-01

Aerosol jet printing technology enables fine feature deposition of electronic materials onto low-temperature, non-planar substrates without masks. In this work, silver nanowires (AgNWs) are proposed to be printed into transparent flexible electrodes using a Maskless Mesoscale Material Deposition Aerosol Jet® printing system on a glass substrate. The influence of the most significant process parameters, including printing cycles, printing speed, and nozzle size, on the performance of AgNW electrodes was systematically studied. The morphologies of printed patterns were characterized by scanning electron microscopy, and the transmittance was evaluated using an ultraviolet-visible spectrophotometer. Under optimum conditions, high transparent AgNW electrodes with a sheet resistance of 57.68 Ω/sq and a linewidth of 50.9 μm were obtained, which is an important step towards a higher performance goal for flexible electronic applications.

Organic Nanowires

DEFF Research Database (Denmark)

Balzer, Frank; Schiek, Manuela; Al-Shamery, Katharina

Single crystalline nanowires from fluorescing organic molecules like para-phenylenes or thiophenes are supposed to become key elements in future integrated optoelectronic devices [1]. For a sophisticated design of devices based on nanowires the basic principles of the nanowire formation have...... atomic force microscopy and from polarized far-field optical microscopy for various prototypical molecules are reproduced by electrostatic and Monte Carlo calculations. Based on the crystal structure, predictions on the growth habit from other conjugated molecules become in reach....

Heterojunction metal-oxide-metal Au-Fe{sub 3}O{sub 4}-Au single nanowire device for spintronics

Energy Technology Data Exchange (ETDEWEB)

Reddy, K. M., E-mail: mrkongara@boisestate.edu; Punnoose, Alex; Hanna, Charles [Department of Physics, Boise State University, Boise, Idaho 83725 (United States); Padture, Nitin P. [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States)

2015-05-07

In this report, we present the synthesis of heterojunction magnetite nanowires in alumina template and describe magnetic and electrical properties from a single nanowire device for spintronics applications. Heterojunction Au-Fe-Au nanowire arrays were electrodeposited in porous aluminum oxide templates, and an extensive and controlled heat treatment process converted Fe segment to nanocrystalline cubic magnetite phase with well-defined Au-Fe{sub 3}O{sub 4} interfaces as confirmed by the transmission electron microscopy. Magnetic measurements revealed Verwey transition shoulder around 120 K and a room temperature coercive field of 90 Oe. Current–voltage (I-V) characteristics of a single Au-Fe{sub 3}O{sub 4}-Au nanowire have exhibited Ohmic behavior. Anomalous positive magnetoresistance of about 0.5% is observed on a single nanowire, which is attributed to the high spin polarization in nanowire device with pure Fe{sub 3}O{sub 4} phase and nanocontact barrier. This work demonstrates the ability to preserve the pristine Fe{sub 3}O{sub 4} and well defined electrode contact metal (Au)–magnetite interface, which helps in attaining high spin polarized current.

Flexible anodized aluminum oxide membranes with customizable back contact materials.

Science.gov (United States)

Nadimpally, B; Jarro, C A; Mangu, R; Rajaputra, S; Singh, V P

2016-12-16

Anodized aluminum oxide (AAO) membranes were fabricated using flexible substrate/carrier material. This method facilitates the use of AAO templates with many different materials as substrates that are otherwise incompatible with most anodization techniques. Thin titanium (Ti) and tungsten (W) layers were employed as interlayer materials. Titanium enhances adhesion. Tungsten not only helps eliminate the barrier layer but also plays a critical role in enabling the use of flexible substrates. The resulting flexible templates provide new, exciting opportunities in photovoltaic and other device applications. CuInSe 2 nanowires were electrochemically deposited into porous AAO templates with molybdenum (Mo) as the back contact material. The feasibility of using any material to form a contact with semiconductor nanowires has been demonstrated for the first time enabling new avenues in photovoltaic applications.

Flexible anodized aluminum oxide membranes with customizable back contact materials

Science.gov (United States)

Nadimpally, B.; Jarro, C. A.; Mangu, R.; Rajaputra, S.; Singh, V. P.

2016-12-01

Anodized aluminum oxide (AAO) membranes were fabricated using flexible substrate/carrier material. This method facilitates the use of AAO templates with many different materials as substrates that are otherwise incompatible with most anodization techniques. Thin titanium (Ti) and tungsten (W) layers were employed as interlayer materials. Titanium enhances adhesion. Tungsten not only helps eliminate the barrier layer but also plays a critical role in enabling the use of flexible substrates. The resulting flexible templates provide new, exciting opportunities in photovoltaic and other device applications. CuInSe2 nanowires were electrochemically deposited into porous AAO templates with molybdenum (Mo) as the back contact material. The feasibility of using any material to form a contact with semiconductor nanowires has been demonstrated for the first time enabling new avenues in photovoltaic applications.

Roll-to-roll slot-die coating of 400 mm wide, flexible, transparent Ag nanowire films for flexible touch screen panels.

Science.gov (United States)

Kim, Dong-Ju; Shin, Hae-In; Ko, Eun-Hye; Kim, Ki-Hyun; Kim, Tae-Woong; Kim, Han-Ki

2016-09-28

We report fabrication of large area Ag nanowire (NW) film coated using a continuous roll-to-roll (RTR) slot die coater as a viable alternative to conventional ITO electrodes for cost-effective and large-area flexible touch screen panels (TSPs). By controlling the flow rate of shear-thinning Ag NW ink in the slot die, we fabricated Ag NW percolating network films with different sheet resistances (30-70 Ohm/square), optical transmittance values (89-90%), and haze (0.5-1%) percentages. Outer/inner bending, twisting, and rolling tests as well as dynamic fatigue tests demonstrated that the mechanical flexibility of the slot-die coated Ag NW films was superior to that of conventional ITO films. Using diamond-shape patterned Ag NW layer electrodes (50 Ohm/square, 90% optical transmittance), we fabricated 12-inch flexible film-film type and rigid glass-film-film type TSPs. Successful operation of flexible TSPs with Ag NW electrodes indicates that slot-die-coated large-area Ag NW films are promising low cost, high performance, and flexible transparent electrodes for cost-effective large-area flexible TSPs and can be substituted for ITO films, which have high sheet resistance and are brittle.

Roll-to-roll slot-die coating of 400 mm wide, flexible, transparent Ag nanowire films for flexible touch screen panels

Science.gov (United States)

Kim, Dong-Ju; Shin, Hae-In; Ko, Eun-Hye; Kim, Ki-Hyun; Kim, Tae-Woong; Kim, Han-Ki

2016-09-01

We report fabrication of large area Ag nanowire (NW) film coated using a continuous roll-to-roll (RTR) slot die coater as a viable alternative to conventional ITO electrodes for cost-effective and large-area flexible touch screen panels (TSPs). By controlling the flow rate of shear-thinning Ag NW ink in the slot die, we fabricated Ag NW percolating network films with different sheet resistances (30-70 Ohm/square), optical transmittance values (89-90%), and haze (0.5-1%) percentages. Outer/inner bending, twisting, and rolling tests as well as dynamic fatigue tests demonstrated that the mechanical flexibility of the slot-die coated Ag NW films was superior to that of conventional ITO films. Using diamond-shape patterned Ag NW layer electrodes (50 Ohm/square, 90% optical transmittance), we fabricated 12-inch flexible film-film type and rigid glass-film-film type TSPs. Successful operation of flexible TSPs with Ag NW electrodes indicates that slot-die-coated large-area Ag NW films are promising low cost, high performance, and flexible transparent electrodes for cost-effective large-area flexible TSPs and can be substituted for ITO films, which have high sheet resistance and are brittle.

Overcoming the limitations of silver nanowire electrodes for light emitting applications

Science.gov (United States)

Chen, Dustin Yuan

aforementioned method is applied to understanding the electrical stability of silver nanowires. At the time of publication, previous works on the electrical failure of silver nanowires centered on the observation of failure under current flow, without a solution offered for how to mitigate the phenomenon. However, because the underlying purpose of these electrodes is to transport current, providing a solution for the failure flow is paramount to the success of AgNWs in future commercial applications. The importance of the development of this solution cannot be understated, especially in light of the fact that silver nanowires have been shown to fail under electrical stresses below typical operating conditions of various optoelectronic devices. The same technique mentioned previously can be leveraged for electrically stable silver nanowire networks, which show significant morphological stability over pristine silver nanowires when electrically stressed at normal operating conditions for OLEDs. These electrically stable substrates were able to produce high performance OLEDs with lifetimes 140% longer than the same devices fabricated on ITO, and 20% higher than non-electrically stable AgNW-based substrates. Thirdly, the thermally and electrically stable substrate was used to fabricate a high performing perovskite quantum dot light-emitting device exhibiting high flexibility. The use of quantum dots instead of perovskite precursors and post treatment to convert the precursors to perovskite allowed for several new innovations. Due to the elimination of highly polar solvents typically required with perovskite precursors, a broadened range of architectures can be achieved. Furthermore, due to the small dimensions of the quantum dots in contrast to thick films of perovskite formed from precursors, the active layer can extremely thin, allowing for high mechanical flexibility. The performance metrics achieved of 10.4 cd/A, 8.1 lm/W, and 2.6% EQE at a brightness of 1000 cd/m2 were enabled

Photovoltaic devices based on quantum dot functionalized nanowire arrays embedded in an organic matrix

Science.gov (United States)

Kung, Patrick; Harris, Nicholas; Shen, Gang; Wilbert, David S.; Baughman, William; Balci, Soner; Dawahre, Nabil; Butler, Lee; Rivera, Elmer; Nikles, David; Kim, Seongsin M.

2012-01-01

Quantum dot (QD) functionalized nanowire arrays are attractive structures for low cost high efficiency solar cells. QDs have the potential for higher quantum efficiency, increased stability and lifetime compared to traditional dyes, as well as the potential for multiple electron generation per photon. Nanowire array scaffolds constitute efficient, low resistance electron transport pathways which minimize the hopping mechanism in the charge transport process of quantum dot solar cells. However, the use of liquid electrolytes as a hole transport medium within such scaffold device structures have led to significant degradation of the QDs. In this work, we first present the synthesis uniform single crystalline ZnO nanowire arrays and their functionalization with InP/ZnS core-shell quantum dots. The structures are characterized using electron microscopy, optical absorption, photoluminescence and Raman spectroscopy. Complementing photoluminescence, transmission electron microanalysis is used to reveal the successful QD attachment process and the atomistic interface between the ZnO and the QD. Energy dispersive spectroscopy reveals the co-localized presence of indium, phosphorus, and sulphur, suggestive of the core-shell nature of the QDs. The functionalized nanowire arrays are subsequently embedded in a poly-3(hexylthiophene) hole transport matrix with a high degree of polymer infiltration to complete the device structure prior to measurement.

The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing

Science.gov (United States)

Chang, Yi-Kuei; Hong, Franklin Chau-Nan

2009-05-01

A method with the potential to fabricate large-area nanowire field-effect transistors (NW-FETs) was demonstrated in this study. Using a high-speed roller (20-80 cm min-1), transfer printing was successfully employed to transfer vertically aligned zinc oxide (ZnO) nanowires grown on a donor substrate to a polydimethylsiloxane (PDMS) stamp and then print the ordered ZnO nanowire arrays on the received substrate for the fabrication of NW-FETs. ZnO NW-FETs fabricated by this method exhibit high performances with a threshold voltage of around 0.25 V, a current on/off ratio as high as 105, a subthreshold slope of 360 mV/dec, and a field-effect mobility of around 90 cm2 V-1 s-1. The excellent device characteristics suggest that the roll-transfer printing technique, which is compatible with the roll-to-roll (R2R) process and operated in atmosphere, has a good potential for the high-speed fabrication of large-area nanowire transistors for flexible devices and flat panel displays.

The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing

International Nuclear Information System (INIS)

Chang, Y-K; Hong, Franklin Chau-Nan

2009-01-01

A method with the potential to fabricate large-area nanowire field-effect transistors (NW-FETs) was demonstrated in this study. Using a high-speed roller (20-80 cm min -1 ), transfer printing was successfully employed to transfer vertically aligned zinc oxide (ZnO) nanowires grown on a donor substrate to a polydimethylsiloxane (PDMS) stamp and then print the ordered ZnO nanowire arrays on the received substrate for the fabrication of NW-FETs. ZnO NW-FETs fabricated by this method exhibit high performances with a threshold voltage of around 0.25 V, a current on/off ratio as high as 10 5 , a subthreshold slope of 360 mV/dec, and a field-effect mobility of around 90 cm 2 V -1 s -1 . The excellent device characteristics suggest that the roll-transfer printing technique, which is compatible with the roll-to-roll (R2R) process and operated in atmosphere, has a good potential for the high-speed fabrication of large-area nanowire transistors for flexible devices and flat panel displays.

The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing

Energy Technology Data Exchange (ETDEWEB)

Chang, Y-K; Hong, Franklin Chau-Nan [Department of Chemical Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China)], E-mail: hong@mail.ncku.edu.tw

2009-05-13

A method with the potential to fabricate large-area nanowire field-effect transistors (NW-FETs) was demonstrated in this study. Using a high-speed roller (20-80 cm min{sup -1}), transfer printing was successfully employed to transfer vertically aligned zinc oxide (ZnO) nanowires grown on a donor substrate to a polydimethylsiloxane (PDMS) stamp and then print the ordered ZnO nanowire arrays on the received substrate for the fabrication of NW-FETs. ZnO NW-FETs fabricated by this method exhibit high performances with a threshold voltage of around 0.25 V, a current on/off ratio as high as 10{sup 5}, a subthreshold slope of 360 mV/dec, and a field-effect mobility of around 90 cm{sup 2} V{sup -1} s{sup -1}. The excellent device characteristics suggest that the roll-transfer printing technique, which is compatible with the roll-to-roll (R2R) process and operated in atmosphere, has a good potential for the high-speed fabrication of large-area nanowire transistors for flexible devices and flat panel displays.

Towards Flexible Transparent Electrodes Based on Carbon and Metallic Materials

Directory of Open Access Journals (Sweden)

Minghui Luo

2017-01-01

Full Text Available Flexible transparent electrodes (FTEs with high stability and scalability are in high demand for the extremely widespread applications in flexible optoelectronic devices. Traditionally, thin films of indium thin oxide (ITO served the role of FTEs, but film brittleness and scarcity of materials limit its further application. This review provides a summary of recent advances in emerging transparent electrodes and related flexible devices (e.g., touch panels, organic light-emitting diodes, sensors, supercapacitors, and solar cells. Mainly focusing on the FTEs based on carbon nanomaterials (e.g., carbon nanotubes and graphene and metal materials (e.g., metal grid and metal nanowires, we discuss the fabrication techniques, the performance improvement, and the representative applications of these highly transparent and flexible electrodes. Finally, the challenges and prospects of flexible transparent electrodes will be summarized.

Extremely flexible nanoscale ultrathin body silicon integrated circuits on plastic.

Science.gov (United States)

Shahrjerdi, Davood; Bedell, Stephen W

2013-01-09

In recent years, flexible devices based on nanoscale materials and structures have begun to emerge, exploiting semiconductor nanowires, graphene, and carbon nanotubes. This is primarily to circumvent the existing shortcomings of the conventional flexible electronics based on organic and amorphous semiconductors. The aim of this new class of flexible nanoelectronics is to attain high-performance devices with increased packing density. However, highly integrated flexible circuits with nanoscale transistors have not yet been demonstrated. Here, we show nanoscale flexible circuits on 60 Å thick silicon, including functional ring oscillators and memory cells. The 100-stage ring oscillators exhibit the stage delay of ~16 ps at a power supply voltage of 0.9 V, the best reported for any flexible circuits to date. The mechanical flexibility is achieved by employing the controlled spalling technology, enabling the large-area transfer of the ultrathin body silicon devices to a plastic substrate at room temperature. These results provide a simple and cost-effective pathway to enable ultralight flexible nanoelectronics with unprecedented level of system complexity based on mainstream silicon technology.

Conformable Skin-Like Conductive Thin Films with AgNWs Strips for Flexible Electronic Devices

Directory of Open Access Journals (Sweden)

Yuhang SUN

2015-08-01

Full Text Available Keeping good conductivity at high stretching strain is one of the main requirements for the fabrication of flexible electronic devices. The elastic nature of siloxane-based elastomers enables many innovative designs in wearable sensor devices and non-invasive insertion instruments, including skin-like tactile sensors. Over the last few years, polydimethylsiloxane (PDMS thin films have been widely used as the substrates in the fabrication of flexible electronic devices due to their good elasticity and outstanding biocompatibility. However, these kind of thin films usually suffer poor resistance to tearing and insufficient compliance to curved surfaces, which limits their applications. Currently no three-dimensionally mountable tactile sensor arrays have been reported commercially available. In this work, we developed a kind of mechanically compliant skin-like conductive thin film by patterning silver nano wire traces in strip-style on Dragon Skin® (DS substrates instead of PDMS. High cross- link quality was achieved then. To further improve the conductivity, a thin gold layer was coated onto the silver nanowires (AgNWs strips. Four different gold deposition routines have been designed and investigated by using different E-beam and spin coating processing methods. Owning to the intrinsically outstanding physical property of the Dragon Skin material and the uniform embedment built in the gold deposition processes, the DS/AgNWs thin films showed convincible advantages over PDMS/AgNWs thin films in both mechanical capability and conductive stability. Through experimental tests, the DS/AgNWs electrode thin films were proven to be able to maintain high conductivity following repeated linear deformations.

Conductive polymer/metal composites for interconnect of flexible devices

Science.gov (United States)

Kawakita, Jin; Hashimoto Shinoda, Yasuo; Shuto, Takanori; Chikyow, Toyohiro

2015-06-01

An interconnect of flexible and foldable devices based on advanced electronics requires high electrical conductivity, flexibility, adhesiveness on a plastic substrate, and efficient productivity. In this study, we investigated the applicability of a conductive polymer/metal composite to the interconnect of flexible devices. By combining an inkjet process and a photochemical reaction, micropatterns of a polypyrrole/silver composite were formed on flexible plastic substrates with an average linewidth of approximately 70 µm within 10 min. The conductivity of the composite was improved to 6.0 × 102 Ω-1·cm-1. From these results, it is expected that the conducting polymer/metal composite can be applied to the microwiring of flexible electronic devices.

Performance enhancement of metal nanowire-based transparent electrodes by electrically driven nanoscale nucleation of metal oxides

Science.gov (United States)

Shiau, Yu-Jeng; Chiang, Kai-Ming; Lin, Hao-Wu

2015-07-01

Solution-processed silver nanowire (AgNW) electrodes have been considered to be promising materials for next-generation flexible transparent conductive electrodes. Despite the fact that a single AgNW has extremely high conductivities, the high junction resistance between nanowires limits the performance of the AgNW matrix. Therefore, post-treatments are usually required to approach better NW-NW contact. Herein, we report a novel linking method that uses joule heating to accumulate sol-gel ZnO near nanowire junctions. The nanoscale ZnO nucleation successfully restrained the thermal instability of the AgNW under current injection and acted as an efficient tightening medium to realize good NW-NW contacts. A low process temperature (PET and PEN, feasible. The optimized AgNW transparent conductive electrodes (TCE) fabricated using this promising linking method exhibited a low sheet resistance (13 Ω sq-1), a high transmission (92% at 550 nm), a high figure of merit (FOM; up to σDC/σOp = 340) and can be applied to wide range of next-generation flexible optoelectronic devices.Solution-processed silver nanowire (AgNW) electrodes have been considered to be promising materials for next-generation flexible transparent conductive electrodes. Despite the fact that a single AgNW has extremely high conductivities, the high junction resistance between nanowires limits the performance of the AgNW matrix. Therefore, post-treatments are usually required to approach better NW-NW contact. Herein, we report a novel linking method that uses joule heating to accumulate sol-gel ZnO near nanowire junctions. The nanoscale ZnO nucleation successfully restrained the thermal instability of the AgNW under current injection and acted as an efficient tightening medium to realize good NW-NW contacts. A low process temperature (PET and PEN, feasible. The optimized AgNW transparent conductive electrodes (TCE) fabricated using this promising linking method exhibited a low sheet resistance (13 Ω sq

Flexible Organic Electronics in Biology: Materials and Devices.

Science.gov (United States)

Liao, Caizhi; Zhang, Meng; Yao, Mei Yu; Hua, Tao; Li, Li; Yan, Feng

2015-12-09

At the convergence of organic electronics and biology, organic bioelectronics attracts great scientific interest. The potential applications of organic semiconductors to reversibly transmit biological signals or stimulate biological tissues inspires many research groups to explore the use of organic electronics in biological systems. Considering the surfaces of movable living tissues being arbitrarily curved at physiological environments, the flexibility of organic bioelectronic devices is of paramount importance in enabling stable and reliable performances by improving the contact and interaction of the devices with biological systems. Significant advances in flexible organic bio-electronics have been achieved in the areas of flexible organic thin film transistors (OTFTs), polymer electrodes, smart textiles, organic electrochemical ion pumps (OEIPs), ion bipolar junction transistors (IBJTs) and chemiresistors. This review will firstly discuss the materials used in flexible organic bioelectronics, which is followed by an overview on various types of flexible organic bioelectronic devices. The versatility of flexible organic bioelectronics promises a bright future for this emerging area. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Copper Nanowires and Their Applications for Flexible, Transparent Conducting Films: A Review

Directory of Open Access Journals (Sweden)

Vu Binh Nam

2016-03-01

Full Text Available Cu nanowires (NWs are attracting considerable attention as alternatives to Ag NWs for next-generation transparent conductors, replacing indium tin oxide (ITO and micro metal grids. Cu NWs hold great promise for low-cost fabrication via a solution-processed route and show preponderant optical, electrical, and mechanical properties. In this study, we report a summary of recent advances in research on Cu NWs, covering the optoelectronic properties, synthesis routes, deposition methods to fabricate flexible transparent conducting films, and their potential applications. This review also examines the approaches on protecting Cu NWs from oxidation in air environments.

Semiconductor-based, large-area, flexible, electronic devices

Science.gov (United States)

Goyal, Amit [Knoxville, TN

2011-03-15

Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Low-Cost Photolithographic Fabrication of Nanowires and Microfilters for Advanced Bioassay Devices

Directory of Open Access Journals (Sweden)

Nhi M. Doan

2015-03-01

Full Text Available Integrated microfluidic devices with nanosized array electrodes and microfiltration capabilities can greatly increase sensitivity and enhance automation in immunoassay devices. In this contribution, we utilize the edge-patterning method of thin aluminum (Al films in order to form nano- to micron-sized gaps. Evaporation of high work-function metals (i.e., Au, Ag, etc. on these gaps, followed by Al lift-off, enables the formation of electrical uniform nanowires from low-cost, plastic-based, photomasks. By replacing Al with chromium (Cr, the formation of high resolution, custom-made photomasks that are ideal for low-cost fabrication of a plurality of array devices were realized. To demonstrate the feasibility of such Cr photomasks, SU-8 micro-pillar masters were formed and replicated into PDMS to produce micron-sized filters with 3–4 µm gaps and an aspect ratio of 3. These microfilters were capable of retaining 6 µm beads within a localized site, while allowing solvent flow. The combination of nanowire arrays and micro-pillar filtration opens new perspectives for rapid R&D screening of various microfluidic-based immunoassay geometries, where analyte pre-concentration and highly sensitive, electrochemical detection can be readily co-localized.

Zinc oxide nanowire-poly(methyl methacrylate) dielectric layers for polymer capacitive pressure sensors.

Science.gov (United States)

Chen, Yan-Sheng; Hsieh, Gen-Wen; Chen, Shih-Ping; Tseng, Pin-Yen; Wang, Cheng-Wei

2015-01-14

Polymer capacitive pressure sensors based on a dielectric composite layer of zinc oxide nanowire and poly(methyl methacrylate) show pressure sensitivity in the range of 2.63 × 10(-3) to 9.95 × 10(-3) cm(2) gf(-1). This represents an increase of capacitance change by as much as a factor of 23 over pristine polymer devices. An ultralight load of only 10 mg (corresponding to an applied pressure of ∼0.01 gf cm(-2)) can be clearly recognized, demonstrating remarkable characteristics of these nanowire-polymer capacitive pressure sensors. In addition, optical transmittance of the dielectric composite layer is approximately 90% in the visible wavelength region. Their low processing temperature, transparency, and flexible dielectric film makes them a highly promising means for flexible touching and pressure-sensing applications.

Electrically Injected UV-Visible Nanowire Lasers

Energy Technology Data Exchange (ETDEWEB)

Wang, George T.; Li, Changyi; Li, Qiming; Liu, Sheng; Wright, Jeremy Benjamin; Brener, Igal; Luk, Ting -Shan; Chow, Weng W.; Leung, Benjamin; Figiel, Jeffrey J.; Koleske, Daniel D.; Lu, Tzu-Ming

2015-09-01

There is strong interest in minimizing the volume of lasers to enable ultracompact, low-power, coherent light sources. Nanowires represent an ideal candidate for such nanolasers as stand-alone optical cavities and gain media, and optically pumped nanowire lasing has been demonstrated in several semiconductor systems. Electrically injected nanowire lasers are needed to realize actual working devices but have been elusive due to limitations of current methods to address the requirement for nanowire device heterostructures with high material quality, controlled doping and geometry, low optical loss, and efficient carrier injection. In this project we proposed to demonstrate electrically injected single nanowire lasers emitting in the important UV to visible wavelengths. Our approach to simultaneously address these challenges is based on high quality III-nitride nanowire device heterostructures with precisely controlled geometries and strong gain and mode confinement to minimize lasing thresholds, enabled by a unique top-down nanowire fabrication technique.

Structural and electrochemical properties of single crystalline MoV 2O8 nanowires for energy storage devices

KAUST Repository

Shahid, Muhammad; Liu, Jingling; Ali, Zahid; Shakir, Imran; Warsi, Muhammad Farooq

2013-01-01

We report the synthesis of MoV2O8 nanowires of high quality using spin coating followed by the thermal annealing process. Transmission electron microscopy (TEM) reveals the average diameter of synthesized nanowire about 100 nm, and average length ranges from 1 to 5 μm. The TEM analysis further confirms the <001> growth direction of MoV 2O8 nanowires. The electrochemical properties of synthesized nanowires using cyclic voltammetry show the specific capacitance 56 Fg-1 at the scan rate of 5 mV s-1 that remains 24 Fg -1 at 100 mV s-1. The electrochemical measurements suggest that the MoV2O8 nanowires can be used as a material for the future electrochemical capacitors (energy storage devices). © 2012 Published by Elsevier Inc. All rights reserved.

Structural and electrochemical properties of single crystalline MoV 2O8 nanowires for energy storage devices

KAUST Repository

Shahid, Muhammad

2013-05-01

We report the synthesis of MoV2O8 nanowires of high quality using spin coating followed by the thermal annealing process. Transmission electron microscopy (TEM) reveals the average diameter of synthesized nanowire about 100 nm, and average length ranges from 1 to 5 μm. The TEM analysis further confirms the <001> growth direction of MoV 2O8 nanowires. The electrochemical properties of synthesized nanowires using cyclic voltammetry show the specific capacitance 56 Fg-1 at the scan rate of 5 mV s-1 that remains 24 Fg -1 at 100 mV s-1. The electrochemical measurements suggest that the MoV2O8 nanowires can be used as a material for the future electrochemical capacitors (energy storage devices). © 2012 Published by Elsevier Inc. All rights reserved.

All-(111) surface silicon nanowire field effect transistor devices: Effects of surface preparations

NARCIS (Netherlands)

Masood, M.N.; Carlen, Edwin; van den Berg, Albert

2014-01-01

Etching/hydrogen termination of All-(111) surface silicon nanowire field effect (SiNW-FET) devices developed by conventional photolithography and plane dependent wet etchings is studied with X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM) and

Carbon Quantum Dot Surface-Engineered VO2 Interwoven Nanowires: A Flexible Cathode Material for Lithium and Sodium Ion Batteries.

Science.gov (United States)

Balogun, Muhammad-Sadeeq; Luo, Yang; Lyu, Feiyi; Wang, Fuxin; Yang, Hao; Li, Haibo; Liang, Chaolun; Huang, Miao; Huang, Yongchao; Tong, Yexiang

2016-04-20

The use of electrode materials in their powdery form requires binders and conductive additives for the fabrication of the cells, which leads to unsatisfactory energy storage performance. Recently, a new strategy to design flexible, binder-, and additive-free three-dimensional electrodes with nanoscale surface engineering has been exploited in boosting the storage performance of electrode materials. In this paper, we design a new type of free-standing carbon quantum dot coated VO2 interwoven nanowires through a simple fabrication process and demonstrate its potential to be used as cathode material for lithium and sodium ion batteries. The versatile carbon quantum dots that are vastly flexible for surface engineering serve the function of protecting the nanowire surface and play an important role in the diffusion of electrons. Also, the three-dimensional carbon cloth coated with VO2 interwoven nanowires assisted in the diffusion of ions through the inner and the outer surface. With this unique architecture, the carbon quantum dot nanosurface engineered VO2 electrode exhibited capacities of 420 and 328 mAh g(-1) at current density rate of 0.3 C for lithium and sodium storage, respectively. This work serves as a milestone for the potential replacement of lithium ion batteries and next generation postbatteries.

Silver nanowire based flexible electrodes with improved properties: High conductivity, transparency, adhesion and low haze

International Nuclear Information System (INIS)

Kiran Kumar, A.B.V.; Wan Bae, Chang; Piao, Longhai; Kim, Sang-Ho

2013-01-01

Graphical abstract: This graphical abstract illustrates the schematic representation of the main drawbacks and rectifications for AgNWs based transparent electrodes. - Highlights: • Films exhibited low sheet resistance and optical properties with R s ≤ 30 Ω/□ and T ≥ 90%. • We decreased haze to 2% by controlling AgNWs length, diameter, and concentration. • We achieved good adhesion for AgNWs on PET film. • There is no significant change in resistance in the bending angle from 0° to 180°, and on twisting. - Abstract: Recent work has been focusing on solution processable transparent electrodes for various applications including solar cells and displays. As well as, the research aims majorly at silver nanowires (AgNWs) to replace ITO. We enhance the transparent electrode performance as a function of optical and mechanical properties with low sheet resistance, by controlling the AgNWs accept ratios, ink composition, and processing conditions. The nanowire network of transparent films agrees with the 2D percolation law. The film transmittance values at 550 nm are coping with a reference ITO film. Sheet resistance and haze values are suitable for flexible electronic applications. We fabricate transparent flexible film using a low-cost processing technique

Silver nanowire based flexible electrodes with improved properties: High conductivity, transparency, adhesion and low haze

Energy Technology Data Exchange (ETDEWEB)

Kiran Kumar, A.B.V.; Wan Bae, Chang; Piao, Longhai, E-mail: piaolh@kongju.ac.kr; Kim, Sang-Ho, E-mail: sangho1130@kongju.ac.kr

2013-08-01

Graphical abstract: This graphical abstract illustrates the schematic representation of the main drawbacks and rectifications for AgNWs based transparent electrodes. - Highlights: • Films exhibited low sheet resistance and optical properties with R{sub s} ≤ 30 Ω/□ and T ≥ 90%. • We decreased haze to 2% by controlling AgNWs length, diameter, and concentration. • We achieved good adhesion for AgNWs on PET film. • There is no significant change in resistance in the bending angle from 0° to 180°, and on twisting. - Abstract: Recent work has been focusing on solution processable transparent electrodes for various applications including solar cells and displays. As well as, the research aims majorly at silver nanowires (AgNWs) to replace ITO. We enhance the transparent electrode performance as a function of optical and mechanical properties with low sheet resistance, by controlling the AgNWs accept ratios, ink composition, and processing conditions. The nanowire network of transparent films agrees with the 2D percolation law. The film transmittance values at 550 nm are coping with a reference ITO film. Sheet resistance and haze values are suitable for flexible electronic applications. We fabricate transparent flexible film using a low-cost processing technique.

Fabrication of Si/ZnS radial nanowire heterojunction arrays for white light emitting devices on Si substrates.

Science.gov (United States)

Katiyar, Ajit K; Sinha, Arun Kumar; Manna, Santanu; Ray, Samit K

2014-09-10

Well-separated Si/ZnS radial nanowire heterojunction-based light-emitting devices have been fabricated on large-area substrates by depositing n-ZnS film on p-type nanoporous Si nanowire templates. Vertically oriented porous Si nanowires on p-Si substrates have been grown by metal-assisted chemical etching catalyzed using Au nanoparticles. Isolated Si nanowires with needle-shaped arrays have been made by KOH treatment before ZnS deposition. Electrically driven efficient white light emission from radial heterojunction arrays has been achieved under a low forward bias condition. The observed white light emission is attributed to blue and green emission from the defect-related radiative transition of ZnS and Si/ZnS interface, respectively, while the red arises from the porous surface of the Si nanowire core. The observed white light emission from the Si/ZnS nanowire heterojunction could open up the new possibility to integrate Si-based optical sources on a large scale.

Materials growth and characterization of thermoelectric and resistive switching devices

Science.gov (United States)

Norris, Kate J.

erbium monoantimonide (ErSb) thin films with thermal conductivities close to or slightly smaller than the alloy limit of the two ternary alloy hosts. Second we consider an ex-situ monitoring technique based on glancing-angle infrared-absorption used to determine small amounts of erbium antimonide (ErSb) deposited on an indium antimonide (InSb) layer, a concept for thermoelectric devices to scatter phonons. Thirdly we begin our discussion of nanowires with the selective area growth (SAG) of single crystalline indium phosphide (InP) nanopillars on an array of template segments composed of a stack of gold and amorphous silicon. Our approach enables flexible and scalable nanofabrication using industrially proven tools and a wide range of semiconductors on various non-semiconductor substrates. Then we examine the use of graphene to promote the growth of nanowire networks on flexible copper foil leading to the testing of nanowire network devices for thermoelectric applications and the concept of multi-stage devices. We present the ability to tailor current-voltage characteristics to fit a desired application of thermoelectric devices by using nanowire networks as building blocks that can be stacked vertically or laterally. Furthermore, in the study of our flexible nanowire network multi-stage devices, we discovered the presence of nonlinear current-voltage characteristics and discuss how this feature could be utilized to increase efficiency for thermoelectric devices. This work indicates that with sufficient volume and optimized doping, flexible nanowire networks could be a low cost semiconductor solution to our wasted heat challenge. Resistive switching devices are two terminal electrical resistance switches that retain a state of internal resistance based on the history of applied voltage and current. The occurrence of reversible resistance switching has been widely studied in a variety of material systems for applications including nonvolatile memory, logic circuits, and

WO3–x@Au@MnO2 core–shell nanowires on carbon fabric for high-performance flexible supercapacitors.

Science.gov (United States)

Lu, Xihong; Zhai, Teng; Zhang, Xianghui; Shen, Yongqi; Yuan, Longyan; Hu, Bin; Gong, Li; Chen, Jian; Gao, Yihua; Zhou, Jun; Tong, Yexiang; Wang, Zhong Lin

2012-02-14

WO3–x@Au@MnO2 core–shell nanowires (NWs) are synthesized on a flexible carbon fabric and show outstanding electrochemical performance in supercapacitors such as high specific capacitance, good cyclic stability, high energy density, and high power density. These results suggest that the WO3–x@Au@MnO2 NWs have promising potential for use in high-performance flexible supercapacitors. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Synthesis of Oxidation-Resistant Cupronickel Nanowires for Transparent Conducting Nanowire Networks

Energy Technology Data Exchange (ETDEWEB)

Rathmall, Aaron [Duke University; Nguyen, Minh [Duke University; Wiley, Benjamin J [Duke University

2012-01-01

Nanowires of copper can be coated from liquids to create flexible, transparent conducting films that can potentially replace the dominant transparent conductor, indium tin oxide, in displays, solar cells, organic light-emitting diodes, and electrochromic windows. One issue with these nanowire films is that copper is prone to oxidation. It was hypothesized that the resistance to oxidation could be improved by coating copper nanowires with nickel. This work demonstrates a method for synthesizing copper nanowires with nickel shells as well as the properties of cupronickel nanowires in transparent conducting films. Time- and temperature-dependent sheet resistance measurements indicate that the sheet resistance of copper and silver nanowire films will double after 3 and 36 months at room temperature, respectively. In contrast, the sheet resistance of cupronickel nanowires containing 20 mol % nickel will double in about 400 years. Coating copper nanowires to a ratio of 2:1 Cu:Ni gave them a neutral gray color, making them more suitable for use in displays and electrochromic windows. These properties, and the fact that copper and nickel are 1000 times more abundant than indium or silver, make cupronickel nanowires a promising alternative for the sustainable, efficient production of transparent conductors.

Low-frequency noise characterization of single CuO nanowire gas sensor devices

NARCIS (Netherlands)

Steinhauer, S.; Köck, A.; Gspan, C.; Grogger, W.; Vandamme, L.K.J.; Pogany, D.

2015-01-01

Low-frequency noise properties of single CuO nanowire devices were investigated under gas sensor operation conditions in dry and humid synthetic air at 350¿°C. A 1/f noise spectrum was found with the normalized power spectral density of current fluctuations typically a factor of 2 higher for humid

Coaxial CoMoO4 nanowire arrays with chemically integrated conductive coating for high-performance flexible all-solid-state asymmetric supercapacitors

Science.gov (United States)

Chen, Yaping; Liu, Borui; Liu, Qi; Wang, Jun; Li, Zhanshuang; Jing, Xiaoyan; Liu, Lianhe

2015-09-01

Flexible all-solid-state supercapacitors have offered promising applications as novel energy storage devices based on their merits, such as small size, low cost, light weight and high wearability for high-performance portable electronics. However, one major challenge to make flexible all-solid-state supercapacitors depends on the improvement of electrode materials with higher electrical conductivity properties and longer cycling stability. In this article, we put forward a simple strategy to in situ synthesize 1D CoMoO4 nanowires (NWs), using highly conductive CC and an electrically conductive PPy wrapping layer on CoMoO4 NW arrays for high performance electrode materials. The results show that the CoMoO4/PPy hybrid NW electrode exhibits a high areal specific capacitance of ca. 1.34 F cm-2 at a current density of 2 mA cm-2, which is remarkably better than the corresponding values for a pure CoMoO4 NW electrode of 0.7 F cm-2. An excellent cycling performance of nanocomposites of up to 95.2% (ca. 1.12 F cm-2) is achieved after 2000 cycles compared to pristine CoMoO4 NWs. In addition, we fabricate flexible all-solid-state ASC which can be cycled reversibly in the voltage range of 0-1.7 V, and exhibits a maximum energy density of 104.7 W h kg-1 (3.522 mW h cm-3), demonstrating great potential for practical applications in flexible energy storage electronics.Flexible all-solid-state supercapacitors have offered promising applications as novel energy storage devices based on their merits, such as small size, low cost, light weight and high wearability for high-performance portable electronics. However, one major challenge to make flexible all-solid-state supercapacitors depends on the improvement of electrode materials with higher electrical conductivity properties and longer cycling stability. In this article, we put forward a simple strategy to in situ synthesize 1D CoMoO4 nanowires (NWs), using highly conductive CC and an electrically conductive PPy wrapping layer on

Study of GaN nanowires converted from β-Ga2O3 and photoconduction in a single nanowire

Science.gov (United States)

Kumar, Mukesh; Kumar, Sudheer; Chauhan, Neha; Sakthi Kumar, D.; Kumar, Vikram; Singh, R.

2017-08-01

The formation of GaN nanowires from β-Ga2O3 nanowires and photoconduction in a fabricated single GaN nanowire device has been studied. Wurtzite phase GaN were formed from monoclinic β-Ga2O3 nanowires with or without catalyst particles at their tips. The formation of faceted nanostructures from catalyst droplets presented on a nanowire tip has been discussed. The nucleation of GaN phases in β-Ga2O3 nanowires and their subsequent growth due to interfacial strain energy has been examined using a high resolution transmission electron microscope. The high quality of the converted GaN nanowire is confirmed by fabricating single nanowire photoconducting devices which showed ultra high responsivity under ultra-violet illumination.

Toward flexible polymer and paper-based energy storage devices

Energy Technology Data Exchange (ETDEWEB)

Nyholm, Leif [Department of Materials Chemistry, The Aangstroem Laboratory, Uppsala University, Box 538, SE-751 21 Uppsala (Sweden); Nystroem, Gustav; Mihranyan, Albert; Stroemme, Maria [Nanotechnology and Functional Materials, Department of Engineering Sciences, The Aangstroem Laboratory, Uppsala University, Box 534, SE-751 21 Uppsala (Sweden)

2011-09-01

All-polymer and paper-based energy storage devices have significant inherent advantages in comparison with many currently employed batteries and supercapacitors regarding environmental friendliness, flexibility, cost and versatility. The research within this field is currently undergoing an exciting development as new polymers, composites and paper-based devices are being developed. In this report, we review recent progress concerning the development of flexible energy storage devices based on electronically conducting polymers and cellulose containing composites with particular emphasis on paper-based batteries and supercapacitors. We discuss recent progress in the development of the most commonly used electronically conducting polymers used in flexible device prototypes, the advantages and disadvantages of this type of energy storage devices, as well as the two main approaches used in the manufacturing of paper-based charge storage devices. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Piezoresistive Pressure Sensor Based on Synergistical Innerconnect Polyvinyl Alcohol Nanowires/Wrinkled Graphene Film.

Science.gov (United States)

Liu, Weijie; Liu, Nishuang; Yue, Yang; Rao, Jiangyu; Cheng, Feng; Su, Jun; Liu, Zhitian; Gao, Yihua

2018-04-01

Piezoresistive sensor is a promising pressure sensor due to its attractive advantages including uncomplicated signal collection, simple manufacture, economical and practical characteristics. Here, a flexible and highly sensitive pressure sensor based on wrinkled graphene film (WGF)/innerconnected polyvinyl alcohol (PVA) nanowires/interdigital electrodes is fabricated. Due to the synergistic effect between WGF and innerconnected PVA nanowires, the as-prepared pressure sensor realizes a high sensitivity of 28.34 kPa -1 . In addition, the device is able to discern lightweight rice about 22.4 mg (≈2.24 Pa) and shows excellent durability and reliability after 6000 repeated loading and unloading cycles. What is more, the device can detect subtle pulse beat and monitor various human movement behaviors in real-time. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Tunable, flexible antireflection layer of ZnO nanowires embedded in PDMS.

Science.gov (United States)

Kim, Min Kyu; Yi, Dong Kee; Paik, Ungyu

2010-05-18

In this article, we report the fabrication of ordered hybrid structures composed of ZnO nanowires and a polymeric matrix with a polymer precursor infiltrating the nanowire arrays. The antireflective properties of the resulting ZnO nanowire-embedded polydimethylsiloxane composite (ZPC) were investigated at various ZnO nanowire lengths and ZPC bending angles. Interestingly, we found that whereas the antireflective properties showed a strong dependence on the length of the embedded ZnO nanowires in PDMS, the bending of ZPC has little effect on the antireflective properties.

Highly flexible transparent thin film heaters based on silver nanowires and aluminum zinc oxides

Energy Technology Data Exchange (ETDEWEB)

Cheong, Hahn-Gil; Kim, Jin-Hoon; Song, Jun-Hyuk; Jeong, Unyong; Park, Jin-Woo, E-mail: jwpark09@yonsei.ac.kr

2015-08-31

In this work, we developed highly flexible transparent film heaters (f-TFHs) composed of Ag nanowire networks (AgNWs) and aluminum zinc oxide (AZO). Uniform AgNWs were roll-to-roll coated on polyethylene terephthalate (PET) substrates using the Mayer rod method, and AZO was sputter-deposited atop the AgNWs at room temperature. The sheet resistance (R{sub s}) and transparency (T{sub opt}) of the AZO-coated AgNWs changed only slightly compared with the uncoated AgNWs. AZO is thermally less conductive than the heat pipes, but increases the thermal efficiency of the heaters blocking the heat convection through the air. Based on Joule heating, a higher average film temperature (T{sub ave}) is attained at a fixed electric potential drop between electrodes (ϕ) as the R{sub s} of the film decreases. Our experimental results revealed that T{sub ave} of the hybrid f-TFH is higher than AgNWs when the ratio of the area coverage of AgNWs to AZO is over a certain value. When a ϕ as low as 3 V/cm was applied to 5 cm × 5 cm f-TFHs, the maximum temperature of the hybrid film was over 100 °C, which is greater than that of AgNWs by more than 30 °C. Furthermore, uniform heating throughout the surfaces is achieved in the hybrid films while heating begins in small areas where densities of the nanowires (NWs) are the highest in the bare network. The non-uniform heating decreases the lifetime of f-TFHs by forming hot spots. Cyclic bending test results indicated that the hybrid films were as flexible as the AgNWs, and the R{sub s} of the hybrid films changes only slightly until 5000 cycles. Combined with the high-throughput coating technology presented here, the hybrid films will provide a robust and scalable strategy for large-area f-TFHs with highly enhanced performance. - Highlights: • We developed highly efficient flexible thin film heaters based on Ag nanowires and AZO composites. • In the composite, AZO plays an important role as an insulation blanket to block heat loss to

Flexible electroluminescent device with inkjet-printed carbon nanotube electrodes

Science.gov (United States)

Azoubel, Suzanna; Shemesh, Shay; Magdassi, Shlomo

2012-08-01

Carbon nanotube (CNTs) inks may provide an effective route for producing flexible electronic devices by digital printing. In this paper we report on the formulation of highly concentrated aqueous CNT inks and demonstrate the fabrication of flexible electroluminescent (EL) devices by inkjet printing combined with wet coating. We also report, for the first time, on the formation of flexible EL devices in which all the electrodes are formed by inkjet printing of low-cost multi-walled carbon nanotubes (MWCNTs). Several flexible EL devices were fabricated by using different materials for the production of back and counter electrodes: ITO/MWCNT and MWCNT/MWCNT. Transparent electrodes were obtained either by coating a thin layer of the CNTs or by inkjet printing a grid which is composed of empty cells surrounded by MWCNTs. It was found that the conductivity and transparency of the electrodes are mainly controlled by the MWCNT film thickness, and that the dominant factor in the luminance intensity is the transparency of the electrode.

Controllable preparation of TiO2 nanowire arrays on titanium mesh for flexible dye-sensitized solar cells

International Nuclear Information System (INIS)

Liu, Wenwu; Lu, Hui; Zhang, Mei; Guo, Min

2015-01-01

Graphical abstract: TiO 2 nanowire arrays with controlled morphology and density have been synthesized on Ti mesh substrates by hydrothermal approach for flexible dye-sensitized solar cells which showed well photovoltaic efficiency of 3.42%. - Highlights: • Flexible titanium mesh was first used for hydrothermal preparation of TiO 2 NWAs. • The formation mechanism of the TiO 2 nanostructures was discussed. • The density, average diameter, and morphology of TiO 2 NWAs can be controlled. • The effects of the sensitization temperature and time on the properties were studied. - Abstract: TiO 2 nanowire arrays (NWAs) with an average diameter of 80 nm have been successfully synthesized on titanium (Ti) mesh substrates via hydrothermal method. The effects of preparing conditions such as concentration of NaOH solution, reaction time, and hydrothermal temperature on the growth of TiO 2 nanoarrays and its related photovoltaic properties were systematically investigated by scanning electron microscopy, X-ray diffraction, and photovoltaic properties test. The growth mechanism of the Ti mesh-supported TiO 2 nanostructures was discussed in detail. Moreover, a parametric study was performed to determine the optimized temperature and time of the dye sensitized process for the flexible dye-sensitized solar cell (DSSC). It is demonstrated that hydrothermal parameters had obvious influence on the morphology and growth density of the as-prepared TiO 2 nanoarrays. In addition, the performance of the flexible DSSC depended strongly on the sensitization temperature and time. By utilizing Ti mesh-supported TiO 2 NWAs (with a length of about 14 μm) as a photoanode, the flexible DSSC with a short circuit current density of 10.49 mA cm −2 , an open-circuit voltage of 0.69 V, and an overall power conversion efficiency of 3.42% was achieved

Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms

International Nuclear Information System (INIS)

Kobayashi, Nobuhiko P.; Lohn, Andrew; Onishi, Takehiro; Mathai, Sagi; Li, Xuema; Straznicky, Joseph; Wang, Shih-Yuan; Williams, R.S.; Logeeswaran, V.J.; Islam, M.S.

2009-01-01

A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not require a single-crystal semiconductor substrate. In the proposed route, instead of using single-crystal semiconductor substrates that are characterized by their long-range atomic ordering, a template layer that possesses short-range atomic ordering prepared on a non-single-crystal substrate is employed. On the template layer, epitaxial information associated with its short-range atomic ordering is available within an area that is comparable to that of a nanowire root. Thus the template layer locally provides epitaxial information required for the growth of semiconductor nanowires. In the particular demonstration described in this paper, hydrogenated silicon was used as a template layer for epitaxial growth of indium phosphide nanowires. The indium phosphide nanowires grown on the hydrogenerated silicon template layer were found to be single crystal and optically active. Simple photoconductors and pin-diodes were fabricated and tested with the view towards various optoelectronic device applications where group III-V compound semiconductors are functionally integrated onto non-single-crystal platforms. (orig.)

Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms

Energy Technology Data Exchange (ETDEWEB)

Kobayashi, Nobuhiko P.; Lohn, Andrew; Onishi, Takehiro [University of California, Santa Cruz (United States). Baskin School of Engineering; NASA Ames Research Center, Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, Univ. of California Santa Cruz, Moffett Field, CA (United States); Mathai, Sagi; Li, Xuema; Straznicky, Joseph; Wang, Shih-Yuan; Williams, R.S. [Hewlett-Packard Laboratories, Information and Quantum Systems Laboratory, Palo Alto, CA (United States); Logeeswaran, V.J.; Islam, M.S. [University of California Davis, Electrical and Computer Engineering, Davis, CA (United States)

2009-06-15

A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not require a single-crystal semiconductor substrate. In the proposed route, instead of using single-crystal semiconductor substrates that are characterized by their long-range atomic ordering, a template layer that possesses short-range atomic ordering prepared on a non-single-crystal substrate is employed. On the template layer, epitaxial information associated with its short-range atomic ordering is available within an area that is comparable to that of a nanowire root. Thus the template layer locally provides epitaxial information required for the growth of semiconductor nanowires. In the particular demonstration described in this paper, hydrogenated silicon was used as a template layer for epitaxial growth of indium phosphide nanowires. The indium phosphide nanowires grown on the hydrogenerated silicon template layer were found to be single crystal and optically active. Simple photoconductors and pin-diodes were fabricated and tested with the view towards various optoelectronic device applications where group III-V compound semiconductors are functionally integrated onto non-single-crystal platforms. (orig.)

Highly effective field-effect mobility amorphous InGaZnO TFT mediated by directional silver nanowire arrays.

Science.gov (United States)

Liu, Hung-Chuan; Lai, Yi-Chun; Lai, Chih-Chung; Wu, Bing-Shu; Zan, Hsiao-Wen; Yu, Peichen; Chueh, Yu-Lun; Tsai, Chuang-Chuang

2015-01-14

In this work, we demonstrate sputtered amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a record high effective field-effect mobility of 174 cm(2)/V s by incorporating silver nanowire (AgNW) arrays to channel electron transport. Compared to the reference counterpart without nanowires, the over 5-fold enhancement in the effective field-effect mobility exhibits clear dependence on the orientation as well as the surface coverage ratio of silver nanowires. Detailed material and device analyses reveal that during the room-temperature IGZO sputtering indium and oxygen diffuse into the nanowire matrix while the nanowire morphology and good contact between IGZO and nanowires are maintained. The unchanged morphology and good interfacial contact lead to high mobility and air-ambient-stable characteristics up to 3 months. Neither hysteresis nor degraded bias stress reliability is observed. The proposed AgNW-mediated a-IGZO TFTs are promising for development of large-scale, flexible, transparent electronics.

Flexible Nb2O5 nanowires/graphene film electrode for high-performance hybrid Li-ion supercapacitors

Science.gov (United States)

Song, Hao; Fu, Jijiang; Ding, Kang; Huang, Chao; Wu, Kai; Zhang, Xuming; Gao, Biao; Huo, Kaifu; Peng, Xiang; Chu, Paul K.

2016-10-01

The hybrid Li-ion electrochemical supercapacitor (Li-HSC) combining the battery-like anode with capacitive cathode is a promising energy storage device boasting large energy and power densities. Orthorhombic Nb2O5 is a good anode material in Li-HSCs because of its large pseudocapacitive Li-ion intercalation capacity. Herein, we report a high-performance, binder-free and flexible anode consisting of long Nb2O5 nanowires and graphene (L-Nb2O5 NWs/rGO). The paper-like L-Nb2O5 NWs/rGO film electrode has a large mass loading of Nb2O5 of 93.5 wt% as well as short solid-state ion diffusion length, and enhanced conductivity (5.1 S cm-1). The hybrid L-Nb2O5 NWs/rGO paper electrode shows a high reversible specific capacity of 160 mA h g-1 at a current density of 0.2 A g-1, superior rate capability with capacitance retention of 60% when the current density increases from 0.2 to 5 A g-1, as well as excellent cycle stability. The Li-HSC device based on the L-Nb2O5/rGO anode and the cathode of biomass-derived carbon nanosheets delivers an energy density of 106 Wh kg-1 at 580 W kg-1 and 32 Wh kg-1 at a large power density of 14 kW kg-1. Moreover, the Li-HSC device exhibits excellent cycling performance without obvious capacitance decay after 1000 cycles.

Enhanced photovoltaic performance of fully flexible dye-sensitized solar cells based on the Nb{sub 2}O{sub 5} coated hierarchical TiO{sub 2} nanowire-nanosheet arrays

Energy Technology Data Exchange (ETDEWEB)

Liu, Wenwu; Hong, Chengxun; Wang, Hui-gang; Zhang, Mei; Guo, Min, E-mail: guomin@ustb.edu.cn

2016-02-28

Graphical abstract: Nb{sub 2}O{sub 5} coated hierarchical TiO{sub 2} nanowire-sheet arrays photoanode was synthesized on Ti-mesh substrate by using a hydrothermal approach for fully flexible dye-sensitized solar cells which exhibited well photovoltaic efficiency of 4.55%. - Highlights: • Nb{sub 2}O{sub 5} coated hierarchical TiO{sub 2} nanowire-nanosheet arrays were prepared on Ti-mesh. • Nb{sub 2}O{sub 5} coated TiO{sub 2} HNWAs/Pt-ITO-PEN flexible DSSC was constructed. • The fully flexible DSSC exhibited an enhanced photovoltaic performance of 4.55%. • The reasons for the improved conversion efficiency of the DSSC were discussed. - Abstract: Nb{sub 2}O{sub 5} coated hierarchical TiO{sub 2} nanowire-sheet arrays photoanode was synthesized on flexible Ti-mesh substrate by using a hydrothermal approach. The effect of TiO{sub 2} morphology and Nb{sub 2}O{sub 5} coating layer on the photovoltaic performance of the flexible dye sensitized solar cells (DSSCs) based on Ti-mesh supported nanostructures were systematically investigated. Compared to the TiO{sub 2} nanowire arrays (NWAs), hierarchical TiO{sub 2} nanowire arrays (HNWAs) with enlarged internal surface area and strong light scattering properties exhibited higher overall conversion efficiency. The introduction of thin Nb{sub 2}O{sub 5} coating layers on the surface of the TiO{sub 2} HNWAs played a key role in improving the photovoltaic performance of the flexible DSSC. By separating the TiO{sub 2} and electrolyte (I{sup –}/I{sub 3}{sup –}), the Nb{sub 2}O{sub 5} energy barrier decreased the electron recombination rate and increased electron collection efficiency and injection efficiency, resulting in improved J{sub sc} and V{sub oc}. Furthermore, the influence of Nb{sub 2}O{sub 5} coating amounts on the power conversion efficiency were discussed in detail. The fully flexible DSSC based on Nb{sub 2}O{sub 5} coated TiO{sub 2} HNWAs films with a thickness of 14 μm displayed a well photovoltaic property

Ultrasmooth, extremely deformable and shape recoverable Ag nanowire embedded transparent electrode.

Science.gov (United States)

Nam, Sanggil; Song, Myungkwan; Kim, Dong-Ho; Cho, Byungjin; Lee, Hye Moon; Kwon, Jung-Dae; Park, Sung-Gyu; Nam, Kee-Seok; Jeong, Yongsoo; Kwon, Se-Hun; Park, Yun Chang; Jin, Sung-Ho; Kang, Jae-Wook; Jo, Sungjin; Kim, Chang Su

2014-04-25

Transparent electrodes have been widely used in electronic devices such as solar cells, displays, and touch screens. Highly flexible transparent electrodes are especially desired for the development of next generation flexible electronic devices. Although indium tin oxide (ITO) is the most commonly used material for the fabrication of transparent electrodes, its brittleness and growing cost limit its utility for flexible electronic devices. Therefore, the need for new transparent conductive materials with superior mechanical properties is clear and urgent. Ag nanowire (AgNW) has been attracting increasing attention because of its effective combination of electrical and optical properties. However, it still suffers from several drawbacks, including large surface roughness, instability against oxidation and moisture, and poor adhesion to substrates. These issues need to be addressed before wide spread use of metallic NW as transparent electrodes can be realized. In this study, we demonstrated the fabrication of a flexible transparent electrode with superior mechanical, electrical and optical properties by embedding a AgNW film into a transparent polymer matrix. This technique can produce electrodes with an ultrasmooth and extremely deformable transparent electrode that have sheet resistance and transmittance comparable to those of an ITO electrode.

A Robust Highly Aligned DNA Nanowire Array-Enabled Lithography for Graphene Nanoribbon Transistors.

Science.gov (United States)

Kang, Seok Hee; Hwang, Wan Sik; Lin, Zhiqun; Kwon, Se Hun; Hong, Suck Won

2015-12-09

Because of its excellent charge carrier mobility at the Dirac point, graphene possesses exceptional properties for high-performance devices. Of particular interest is the potential use of graphene nanoribbons or graphene nanomesh for field-effect transistors. Herein, highly aligned DNA nanowire arrays were crafted by flow-assisted self-assembly of a drop of DNA aqueous solution on a flat polymer substrate. Subsequently, they were exploited as "ink" and transfer-printed on chemical vapor deposited (CVD)-grown graphene substrate. The oriented DNA nanowires served as the lithographic resist for selective removal of graphene, forming highly aligned graphene nanoribbons. Intriguingly, these graphene nanoribbons can be readily produced over a large area (i.e., millimeter scale) with a high degree of feature-size controllability and a low level of defects, rendering the fabrication of flexible two terminal devices and field-effect transistors.

Synthesis of silver nanowires using hydrothermal technique for flexible transparent electrode application

Energy Technology Data Exchange (ETDEWEB)

Vijila, C. V. Mary; Rahman, K. K. Arsina; Parvathy, N. S.; Jayaraj, M. K., E-mail: mkj@cusat.ac.in [Nanophotonic and Optoelectronic Division, Dept. of Physics, Cochin University of Science and Technology, Kochi, Kerala (India)

2016-05-23

Transparent conducting films are becoming increasingly interesting because of their applications in electronics industry such as their use in solar energy applications. In this work silver nanowires were synthesized using solvothermal method by reducing silver nitrate and adding sodium chloride for assembling silver into nanowires. Absorption spectra of nanowires in the form of a dispersion in deionized water, AFM and SEM images confirm the nanowire formation. Solution of nanowire was coated over PET films to obtain transparent conducting films.

Controllable preparation of TiO{sub 2} nanowire arrays on titanium mesh for flexible dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Liu, Wenwu; Lu, Hui; Zhang, Mei; Guo, Min, E-mail: guomin@ustb.edu.cn

2015-08-30

Graphical abstract: TiO{sub 2} nanowire arrays with controlled morphology and density have been synthesized on Ti mesh substrates by hydrothermal approach for flexible dye-sensitized solar cells which showed well photovoltaic efficiency of 3.42%. - Highlights: • Flexible titanium mesh was first used for hydrothermal preparation of TiO{sub 2} NWAs. • The formation mechanism of the TiO{sub 2} nanostructures was discussed. • The density, average diameter, and morphology of TiO{sub 2} NWAs can be controlled. • The effects of the sensitization temperature and time on the properties were studied. - Abstract: TiO{sub 2} nanowire arrays (NWAs) with an average diameter of 80 nm have been successfully synthesized on titanium (Ti) mesh substrates via hydrothermal method. The effects of preparing conditions such as concentration of NaOH solution, reaction time, and hydrothermal temperature on the growth of TiO{sub 2} nanoarrays and its related photovoltaic properties were systematically investigated by scanning electron microscopy, X-ray diffraction, and photovoltaic properties test. The growth mechanism of the Ti mesh-supported TiO{sub 2} nanostructures was discussed in detail. Moreover, a parametric study was performed to determine the optimized temperature and time of the dye sensitized process for the flexible dye-sensitized solar cell (DSSC). It is demonstrated that hydrothermal parameters had obvious influence on the morphology and growth density of the as-prepared TiO{sub 2} nanoarrays. In addition, the performance of the flexible DSSC depended strongly on the sensitization temperature and time. By utilizing Ti mesh-supported TiO{sub 2} NWAs (with a length of about 14 μm) as a photoanode, the flexible DSSC with a short circuit current density of 10.49 mA cm{sup −2}, an open-circuit voltage of 0.69 V, and an overall power conversion efficiency of 3.42% was achieved.

Plasmonic Waveguide-Integrated Nanowire Laser

DEFF Research Database (Denmark)

Bermudez-Urena, Esteban; Tutuncuoglu, Gozde; Cuerda, Javier

2017-01-01

Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing to data communication technolog......Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing to data communication...... technologies. Despite significant advances in their fundamental aspects, the integration within scalable photonic circuitry remains challenging. Here we report on the realization of hybrid photonic devices consisting of nanowire lasers integrated with wafer-scale lithographically designed V-groove plasmonic...

Corrosion detection of nanowires by magnetic sensors

KAUST Repository

Kosel, Jü rgen; Amara, Selma; Ivanov, Iurii; Blanco, Mario

2017-01-01

Disclosed are various embodiments related to a corrosion detection device for detecting corrosive environments. A corrosion detection device comprises a magnetic sensor and at least one magnetic nanowire disposed on the magnetic sensor. The magnetic sensor is configured to detect corrosion of the one or more magnetic nanowires based at least in part on a magnetic field of the one or more magnetic nanowires.

Corrosion detection of nanowires by magnetic sensors

KAUST Repository

Kosel, Jürgen

2017-10-05

Disclosed are various embodiments related to a corrosion detection device for detecting corrosive environments. A corrosion detection device comprises a magnetic sensor and at least one magnetic nanowire disposed on the magnetic sensor. The magnetic sensor is configured to detect corrosion of the one or more magnetic nanowires based at least in part on a magnetic field of the one or more magnetic nanowires.

Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions

Science.gov (United States)

Li, S.; Kang, N.; Fan, D. X.; Wang, L. B.; Huang, Y. Q.; Caroff, P.; Xu, H. Q.

2016-01-01

Hybrid InSb nanowire-superconductor devices are promising for investigating Majorana modes and topological quantum computation in solid-state devices. An experimental realisation of ballistic, phase-coherent superconductor-nanowire hybrid devices is a necessary step towards engineering topological superconducting electronics. Here, we report on a low-temperature transport study of Josephson junction devices fabricated from InSb nanowires grown by molecular-beam epitaxy and provide a clear evidence for phase-coherent, ballistic charge transport through the nanowires in the junctions. We demonstrate that our devices show gate-tunable proximity-induced supercurrent and clear signatures of multiple Andreev reflections in the differential conductance, indicating phase-coherent transport within the junctions. We also observe periodic modulations of the critical current that can be associated with the Fabry-Pérot interference in the nanowires in the ballistic transport regime. Our work shows that the InSb nanowires grown by molecular-beam epitaxy are of excellent material quality and hybrid superconducting devices made from these nanowires are highly desirable for investigation of the novel physics in topological states of matter and for applications in topological quantum electronics. PMID:27102689

Considerations of device and operational flexibility in FER

International Nuclear Information System (INIS)

Sugihara, Masayoshi; Miki, Nobuharu; Nishio, Satoshi; Yamada, Masao; Yamamoto, Shin

1988-01-01

Expected physics uncertainties in DT burning plasma of FER, which may not be removed completely at the start of construction or DT operation, are reviewed. Several possible device and operational flexibility scenarios to cope with these uncertainties are considered. They are (1) Plasma size enlargement scenario, (2) Plasma shape flexibility scenario, (3) Heating/Current drive/Control system flexibility scenario, (4) Impurity control system flexibility scenario and (5) Advanced operation scenario. Feasibility of these flexibility scenarios are examined and shown to be practicable. However, careful assessment of the physics data base is necessary at the start of construction and DT operation to proceed to actually implement these flexibilities in FER. (author)

Chemically modified graphene based supercapacitors for flexible and miniature devices

Science.gov (United States)

Ghosh, Debasis; Kim, Sang Ouk

2015-09-01

Rapid progress in the portable and flexible electronic devises has stimulated supercapacitor research towards the design and fabrication of high performance flexible devices. Recent research efforts for flexible supercapacitor electrode materials are highly focusing on graphene and chemically modified graphene owing to the unique properties, including large surface area, high electrical and thermal conductivity, excellent mechanical flexibility, and outstanding chemical stability. This invited review article highlights current status of the flexible electrode material research based on chemically modified graphene for supercapacitor application. A variety of electrode architectures prepared from chemically modified graphene are summarized in terms of their structural dimensions. Novel prototypes for the supercapacitor aiming at flexible miniature devices, i.e. microsupercapacitor with high energy and power density are highlighted. Future challenges relevant to graphene-based flexible supercapacitors are also suggested. [Figure not available: see fulltext.

Nanoscale Electronic Conditioning for Improvement of Nanowire Light-Emitting-Diode Efficiency.

Science.gov (United States)

May, Brelon J; Belz, Matthew R; Ahamed, Arshad; Sarwar, A T M G; Selcu, Camelia M; Myers, Roberto C

2018-04-24

Commercial III-Nitride LEDs and lasers spanning visible and ultraviolet wavelengths are based on epitaxial films. Alternatively, nanowire-based III-Nitride optoelectronics offer the advantage of strain compliance and high crystalline quality growth on a variety of inexpensive substrates. However, nanowire LEDs exhibit an inherent property distribution, resulting in uneven current spreading through macroscopic devices that consist of millions of individual nanowire diodes connected in parallel. Despite being electrically connected, only a small fraction of nanowires, sometimes current in the ensemble devices. Burn-in electronic conditioning is performed by applying a short-term overload voltage; the nanoshorts experience very high current density, sufficient to render them open circuits, thereby forcing a new current path through more nanowire LEDs in an ensemble device. Current-voltage measurements of individual nanowires are acquired using conductive atomic force microscopy to observe the removal of nanoshorts using burn-in. In macroscopic devices, this results in a 33× increase in peak EL and reduced leakage current. Burn-in conditioning of nanowire ensembles therefore provides a straightforward method to mitigate nonuniformities inherent to nanowire devices.

Advanced Optoelectronic Devices based on Si Quantum Dots/Si Nanowires Hetero-structures

International Nuclear Information System (INIS)

Xu, J; Zhai, Y Y; Cao, Y Q; Chen, K J

2017-01-01

Si quantum dots are currently extensively studied since they can be used to develop many kinds of optoelectronic devices. In this report, we review the fabrication of Si quantum dots (Si QD) /Si nanowires (Si NWs) hetero-structures by deposition of Si QDs/SiO 2 or Si QDs/SiC multilayers on Si NWs arrays. The electroluminescence and photovoltaic devices based on the formed hetero-structures have been prepared and the improved performance is confirmed. It is also found that the surface recombination via the surface defects states on the Si NWs, especially the ones obtained by the long-time etching, may deteriorate the device properties though they exhibit the better anti-reflection characteristics. The possible surface passivation approaches are briefly discussed. (paper)

Catalyst-free, III-V nanowire photovoltaics

Science.gov (United States)

Davies, D. G.; Lambert, N.; Fry, P. W.; Foster, A.; Krysa, A. B.; Wilson, L. R.

2014-05-01

We report on room temperature, photovoltaic operation of catalyst-free GaAs p-i-n junction nanowire arrays. Growth studies were first performed to determine the optimum conditions for controlling the vertical and lateral growth of the nanowires. Following this, devices consisting of axial p-i-n junctions were fabricated by planarising the nanowire arrays with a hard baked polymer. We discuss the photovoltaic properties of this proof-of-concept device, and significant improvements to be made during the growth.

Growth and Transfer of Monolithic Horizontal ZnO Nanowire Superstructures onto Flexible Substrates

KAUST Repository

Xu, Sheng

2010-04-28

A method of fabricating horizontally aligned ZnO nanowire (NW) arrays with full control over the width and length is demonstrated. A cross-sectional view of the NWs by transmission electron microscopy shows a "mushroom-like" structure. Novel monolithic multisegment superstructures are fabricated by making use of the lateral overgrowth. Ultralong horizontal ZnO NWs of an aspect ratio on the order often thousand are also demonstrated. These horizontal NWs are lifted off and transferred onto a flexible polymer substrate, which may have many great applications in horizontal ZnO NW-based nanosensor arrays, light-emitting diodes, optical gratings, integrated circuit interconnects, and high-output-power alternating-current nanogenerators. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA.

Constricted nanowire with stabilized magnetic domain wall

International Nuclear Information System (INIS)

Sbiaa, R.; Al Bahri, M.

2016-01-01

Domain wall (DW)-based magnetic memory offers the possibility for increasing the storage capacity. However, stability of DW remains the major drawback of this scheme. In this letter, we propose a stepped nanowire for pinning DW in a desirable position. From micromagnetic simulation, the proposed design applied to in-plane magnetic anisotropy materials shows that by adjusting the nanowire step size and its width it is possible to stabilize DW for a desirable current density range. In contrast, only a movement of DW could be seen for conventional nanowire. An extension to a multi-stepped nanowire could be used for multi-bit per cell magnetic memory. - Highlights: • A stepped nanowire is proposed to pin domain wall in desired position. • The new structure can be made by a simple off set of two single nanowires. • The critical current for moving domain wall from one state to the other could be tuned by adjusting the geometry of the device. • The device could be used for multi-bit per cell memory by extending the steps in the device.

Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements.

Science.gov (United States)

Otnes, Gaute; Barrigón, Enrique; Sundvall, Christian; Svensson, K Erik; Heurlin, Magnus; Siefer, Gerald; Samuelson, Lars; Åberg, Ingvar; Borgström, Magnus T

2018-05-09

III-V solar cells in the nanowire geometry might hold significant synthesis-cost and device-design advantages as compared to thin films and have shown impressive performance improvements in recent years. To continue this development there is a need for characterization techniques giving quick and reliable feedback for growth development. Further, characterization techniques which can improve understanding of the link between nanowire growth conditions, subsequent processing, and solar cell performance are desired. Here, we present the use of a nanoprobe system inside a scanning electron microscope to efficiently contact single nanowires and characterize them in terms of key parameters for solar cell performance. Specifically, we study single as-grown InP nanowires and use electron beam induced current characterization to understand the charge carrier collection properties, and dark current-voltage characteristics to understand the diode recombination characteristics. By correlating the single nanowire measurements to performance of fully processed nanowire array solar cells, we identify how the performance limiting parameters are related to growth and/or processing conditions. We use this understanding to achieve a more than 7-fold improvement in efficiency of our InP nanowire solar cells, grown from a different seed particle pattern than previously reported from our group. The best cell shows a certified efficiency of 15.0%; the highest reported value for a bottom-up synthesized InP nanowire solar cell. We believe the presented approach have significant potential to speed-up the development of nanowire solar cells, as well as other nanowire-based electronic/optoelectronic devices.

Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy.

Science.gov (United States)

Joyce, Hannah J; Wong-Leung, Jennifer; Yong, Chaw-Keong; Docherty, Callum J; Paiman, Suriati; Gao, Qiang; Tan, H Hoe; Jagadish, Chennupati; Lloyd-Hughes, James; Herz, Laura M; Johnston, Michael B

2012-10-10

Using transient terahertz photoconductivity measurements, we have made noncontact, room temperature measurements of the ultrafast charge carrier dynamics in InP nanowires. InP nanowires exhibited a very long photoconductivity lifetime of over 1 ns, and carrier lifetimes were remarkably insensitive to surface states despite the large nanowire surface area-to-volume ratio. An exceptionally low surface recombination velocity (170 cm/s) was recorded at room temperature. These results suggest that InP nanowires are prime candidates for optoelectronic devices, particularly photovoltaic devices, without the need for surface passivation. We found that the carrier mobility is not limited by nanowire diameter but is strongly limited by the presence of planar crystallographic defects such as stacking faults in these predominantly wurtzite nanowires. These findings show the great potential of very narrow InP nanowires for electronic devices but indicate that improvements in the crystallographic uniformity of InP nanowires will be critical for future nanowire device engineering.

Ballistic superconductivity in semiconductor nanowires

Science.gov (United States)

Zhang, Hao; Gül, Önder; Conesa-Boj, Sonia; Nowak, Michał P.; Wimmer, Michael; Zuo, Kun; Mourik, Vincent; de Vries, Folkert K.; van Veen, Jasper; de Moor, Michiel W. A.; Bommer, Jouri D. S.; van Woerkom, David J.; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P.A.M.; Quintero-Pérez, Marina; Cassidy, Maja C.; Koelling, Sebastian; Goswami, Srijit; Watanabe, Kenji; Taniguchi, Takashi; Kouwenhoven, Leo P.

2017-01-01

Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor that enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices. PMID:28681843

Towards low-dimensional hole systems in Be-doped GaAs nanowires

DEFF Research Database (Denmark)

Ullah, A. R.; Gluschke, J. G.; Jeppesen, Peter Krogstrup

2017-01-01

-gates produced using GaAs nanowires with three different Be-doping densities and various AuBe contact processing recipes. We show that contact annealing only brings small improvements for the moderately doped devices under conditions of lower anneal temperature and short anneal time. We only obtain good......GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs nanowires offer a path to studying strongly confined 0D and 1D hole systems with strong spin–orbit effects, motivating...... our development of nanowire transistors featuring Be-doped p-type GaAs nanowires, AuBe alloy contacts and patterned local gate electrodes towards making nanowire-based quantum hole devices. We report on nanowire transistors with traditional substrate back-gates and EBL-defined metal/oxide top...

Nanowire transistors physics of devices and materials in one dimension

CERN Document Server

Colinge, Jean-Pierre

2016-01-01

From quantum mechanical concepts to practical circuit applications, this book presents a self-contained and up-to-date account of the physics and technology of nanowire semiconductor devices. It includes a unified account of the critical ideas central to low-dimensional physics and transistor physics which equips readers with a common framework and language to accelerate scientific and technological developments across the two fields. Detailed descriptions of novel quantum mechanical effects such as quantum current oscillations, the metal-to-semiconductor transition and the transition from classical transistor to single-electron transistor operation are described in detail, in addition to real-world applications in the fields of nanoelectronics, biomedical sensing techniques, and advanced semiconductor research. Including numerous illustrations to help readers understand these phenomena, this is an essential resource for researchers and professional engineers working on semiconductor devices and materials in ...

Flexible organic electronic devices: Materials, process and applications

International Nuclear Information System (INIS)

Logothetidis, Stergios

2008-01-01

The research for the development of flexible organic electronic devices (FEDs) is rapidly increasing worldwide, since FEDs will change radically several aspects of everyday life. Although there has been considerable progress in the area of flexible inorganic devices (a-Si or solution processed Si), there are numerous advances in the organic (semiconducting, conducting and insulating), inorganic and hybrid (organic-inorganic) materials that exhibit customized properties and stability, and in the synthesis and preparation methods, which are characterized by a significant amount of multidisciplinary efforts. Furthermore, the development and encapsulation of organic electronic devices onto flexible polymeric substrates by large-scale and low-cost roll-to-roll production processes will allow their market implementation in numerous application areas, including displays, lighting, photovoltaics, radio-frequency identification circuitry and chemical sensors, as well as to a new generation of modern exotic applications. In this work, we report on some of the latest advances in the fields of polymeric substrates, hybrid barrier layers, inorganic and organic materials to be used as novel active and functional thin films and nanomaterials as well as for the encapsulation of the materials components for the production of FEDs (flexible organic light-emitting diodes, and organic photovoltaics). Moreover, we will emphasize on the real-time optical monitoring and characterization of the growing films onto the flexible polymeric substrates by spectroscopic ellipsometry methods. Finally, the potentiality for the in-line characterization processes for the development of organic electronics materials will be emphasized, since it will also establish the framework for the achievement of the future scientific and technological breakthroughs

Superconducting InSb nanowire devices

NARCIS (Netherlands)

Szombati, D.B.

2017-01-01

Josephson junctions form a two-level system which is used as a building block for many types of superconducting qubits. Junctions fabricated from semiconducting nanowires are gate-tunable and offer electrostatically adjustable Josephson energy, highly desirable in qubit architecture. Studying

Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

Energy Technology Data Exchange (ETDEWEB)

Majumdar, Arun; Shakouri, Ali; Sands, Timothy D.; Yang, Peidong; Mao, Samuel S.; Russo, Richard E.; Feick, Henning; Weber, Eicke R.; Kind, Hannes; Huang, Michael; Yan, Haoquan; Wu, Yiying; Fan, Rong

2018-01-30

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Flexible molecular-scale electronic devices composed of diarylethene photoswitching molecules

KAUST Repository

Kim, Dongku; Jeong, Hyunhak; Lee, Hanki; Hwang, Wangtaek; Wolf, Jannic Sebastian; Scheer, Elke; Huhn, Thomas; Jeong, Heejun; Lee, Takhee

2014-01-01

The electrical properties of diarylethene photoswitching molecular devices on flexible substrates are studied. When exposed to UV or visible light, diarylethene molecular devices show two electrical states (a high and a low conductance state) with a discrepancy of an order of magnitude in the level of current between the two states. The diarylethene flexible molecular devices exhibit excellent long-time stability and reliable electrical characteristics in both conductance states when subjected to various mechanical stresses. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Flexible molecular-scale electronic devices composed of diarylethene photoswitching molecules

KAUST Repository

Kim, Dongku

2014-03-31

The electrical properties of diarylethene photoswitching molecular devices on flexible substrates are studied. When exposed to UV or visible light, diarylethene molecular devices show two electrical states (a high and a low conductance state) with a discrepancy of an order of magnitude in the level of current between the two states. The diarylethene flexible molecular devices exhibit excellent long-time stability and reliable electrical characteristics in both conductance states when subjected to various mechanical stresses. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A Stable Flexible Silicon Nanowire Array as Anode for High-Performance Lithium-ion Batteries

International Nuclear Information System (INIS)

Wang, Jiantao; Wang, Hui; Zhang, Bingchang; Wang, Yao; Lu, Shigang; Zhang, Xiaohong

2015-01-01

Highlights: • A flexible SiNW array in PDMS structure is designed and fabricated as Li-ion battery anode material. • The aggregation and fracture of SiNWs are alleviated by the flexible PDMS skeleton during the process of charge and discharge. • The loose SiO 2 shells coating on the SiNWscould form the protective layer in charge/discharge. • The as-obtain flexible SiNW array/PDMS composite exhibits a much better cycling stability. - Abstract: A Silicon nanowire (SiNW) array inserted into flexible poly-dimethylsiloxane (SiNW array/PDMS) composite structure as anode with high capacity and long-term cycling stability is synthesized by a cost-effective and scalable method. In this structure, the aggregation and fracture of SiNWs are alleviated by the flexible PDMS skeleton. Act as the main active component, the SiNWs are coated by loose SiO 2 shells. These loose SiO 2 shells not only provide space for the large volume changes of SiNW, but also react with the electrolyte and form the stable protective layer during the processes of the lithiation and delithiation. These two functions could improve the cycling stability and columbic efficiency of the SiNWs. The as-obtain flexible SiNW array/PDMS composite structure exhibits excellent long-term cycling stability with a specific capacity of 887.2 mA·h·g −1 and capacity retention of ∼83.4% over 350 cycles at 0.5 C rate compared with the fifteenth cycle. The design of this new structure provides a potential way for developing other functional composite materials

Flexible semi-transparent silicon (100) fabric with high-k/metal gate devices

KAUST Repository

Rojas, Jhonathan Prieto

2013-01-07

Can we build a flexible and transparent truly high performance computer? High-k/metal gate stack based metal-oxide-semiconductor capacitor devices are monolithically fabricated on industry\\'s most widely used low-cost bulk single-crystalline silicon (100) wafers and then released as continuous, mechanically flexible, optically semi-transparent and high thermal budget compatible silicon fabric with devices. This is the first ever demonstration with this set of materials which allows full degree of freedom to fabricate nanoelectronics devices using state-of-the-art CMOS compatible processes and then to utilize them in an unprecedented way for wide deployment over nearly any kind of shape and architecture surfaces. Electrical characterization shows uncompromising performance of post release devices. Mechanical characterization shows extra-ordinary flexibility (minimum bending radius of 1 cm) making this generic process attractive to extend the horizon of flexible electronics for truly high performance computers. Schematic and photograph of flexible high-k/metal gate MOSCAPs showing high flexibility and C-V plot showing uncompromised performance. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Stability of Organic Nanowires

DEFF Research Database (Denmark)

Balzer, F.; Schiek, M.; Wallmann, I.

2011-01-01

The morphological stability of organic nanowires over time and under thermal load is of major importance for their use in any device. In this study the growth and stability of organic nanowires from a naphthyl end-capped thiophene grown by organic molecular beam deposition is investigated via ato...

Electrochemically grown rough-textured nanowires

International Nuclear Information System (INIS)

Tyagi, Pawan; Postetter, David; Saragnese, Daniel; Papadakis, Stergios J.; Gracias, David H.

2010-01-01

Nanowires with a rough surface texture show unusual electronic, optical, and chemical properties; however, there are only a few existing methods for producing these nanowires. Here, we describe two methods for growing both free standing and lithographically patterned gold (Au) nanowires with a rough surface texture. The first strategy is based on the deposition of nanowires from a silver (Ag)-Au plating solution mixture that precipitates an Ag-Au cyanide complex during electrodeposition at low current densities. This complex disperses in the plating solution, thereby altering the nanowire growth to yield a rough surface texture. These nanowires are mass produced in alumina membranes. The second strategy produces long and rough Au nanowires on lithographically patternable nickel edge templates with corrugations formed by partial etching. These rough nanowires can be easily arrayed and integrated with microscale devices.

Roll-to-roll-compatible, flexible, transparent electrodes based on self-nanoembedded Cu nanowires using intense pulsed light irradiation

Science.gov (United States)

Zhong, Zhaoyang; Woo, Kyoohee; Kim, Inhyuk; Hwang, Hyewon; Kwon, Sin; Choi, Young-Man; Lee, Youngu; Lee, Taik-Min; Kim, Kwangyoung; Moon, Jooho

2016-04-01

Copper nanowire (Cu NW)-based flexible transparent conductive electrodes (FTCEs) have been investigated in detail for use in various applications such as flexible touch screens, organic photovoltaics and organic light-emitting diodes. In this study, hexadecylamine (HDA) adsorbed onto the surface of NWs is changed into polyvinylpyrrolidone (PVP) via a ligand exchange process; the high-molecular-weight PVP enables high dispersion stability. Intense pulsed light (IPL) irradiation is used to remove organic species present on the surface of the NWs and to form direct connections between the NWs rapidly without any atmospheric control. NWs are self-nanoembedded into a plastic substrate after IPL irradiation, which results in a smooth surface, strong NW/substrate adhesion, excellent mechanical flexibility and enhanced oxidation stability. Moreover, Cu NW FTCEs with high uniformities are successfully fabricated on a large area (150 mm × 200 mm) via successive IPL irradiation that is synchronized with the motion of the sample stage. This study demonstrates the possibility of roll-to-roll-based, large-scale production of low-cost, high-performance Cu NW-based FTCEs.Copper nanowire (Cu NW)-based flexible transparent conductive electrodes (FTCEs) have been investigated in detail for use in various applications such as flexible touch screens, organic photovoltaics and organic light-emitting diodes. In this study, hexadecylamine (HDA) adsorbed onto the surface of NWs is changed into polyvinylpyrrolidone (PVP) via a ligand exchange process; the high-molecular-weight PVP enables high dispersion stability. Intense pulsed light (IPL) irradiation is used to remove organic species present on the surface of the NWs and to form direct connections between the NWs rapidly without any atmospheric control. NWs are self-nanoembedded into a plastic substrate after IPL irradiation, which results in a smooth surface, strong NW/substrate adhesion, excellent mechanical flexibility and enhanced

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates

Science.gov (United States)

Starko-Bowes, Ryan; Pramanik, Sandipan

2013-01-01

In recent years π-conjugated organic semiconductors have emerged as the active material in a number of diverse applications including large-area, low-cost displays, photovoltaics, printable and flexible electronics and organic spin valves. Organics allow (a) low-cost, low-temperature processing and (b) molecular-level design of electronic, optical and spin transport characteristics. Such features are not readily available for mainstream inorganic semiconductors, which have enabled organics to carve a niche in the silicon-dominated electronics market. The first generation of organic-based devices has focused on thin film geometries, grown by physical vapor deposition or solution processing. However, it has been realized that organic nanostructures can be used to enhance performance of above-mentioned applications and significant effort has been invested in exploring methods for organic nanostructure fabrication. A particularly interesting class of organic nanostructures is the one in which vertically oriented organic nanowires, nanorods or nanotubes are organized in a well-regimented, high-density array. Such structures are highly versatile and are ideal morphological architectures for various applications such as chemical sensors, split-dipole nanoantennas, photovoltaic devices with radially heterostructured "core-shell" nanowires, and memory devices with a cross-point geometry. Such architecture is generally realized by a template-directed approach. In the past this method has been used to grow metal and inorganic semiconductor nanowire arrays. More recently π-conjugated polymer nanowires have been grown within nanoporous templates. However, these approaches have had limited success in growing nanowires of technologically important π-conjugated small molecular weight organics, such as tris-8-hydroxyquinoline aluminum (Alq3), rubrene and methanofullerenes, which are commonly used in diverse areas including organic displays, photovoltaics, thin film transistors

Carbon Nanotubes and Graphene for Flexible Electrochemical Energy Storage: from Materials to Devices.

Science.gov (United States)

Wen, Lei; Li, Feng; Cheng, Hui-Ming

2016-06-01

Flexible electrochemical energy storage (FEES) devices have received great attention as a promising power source for the emerging field of flexible and wearable electronic devices. Carbon nanotubes (CNTs) and graphene have many excellent properties that make them ideally suited for use in FEES devices. A brief definition of FEES devices is provided, followed by a detailed overview of various structural models for achieving different FEES devices. The latest research developments on the use of CNTs and graphene in FEES devices are summarized. Finally, future prospects and important research directions in the areas of CNT- and graphene-based flexible electrode synthesis and device integration are discussed. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates.

Science.gov (United States)

Lee, Myeongwon; Koo, Jamin; Chung, Eun-Ae; Jeong, Dong-Young; Koo, Yong-Seo; Kim, Sangsig

2009-11-11

A technique to implement silicon nanowire (SiNW)-based tunneling field-effect transistors (TFETs) on flexible plastic substrates is developed for the first time. The p-i-n configured Si NWs are obtained from an Si wafer using a conventional top-down CMOS-compatible technology, and they are then transferred onto the plastic substrate. Based on gate-controlled band-to-band tunneling (BTBT) as their working principle, the SiNW-based TFETs show normal p-channel switching behavior with a threshold voltage of -1.86 V and a subthreshold swing of 827 mV/dec. In addition, ambipolar conduction is observed due to the presence of the BTBT between the heavily doped p+ drain and n+ channel regions, indicating that our TFETs can operate in the n-channel mode as well. Furthermore, the BTBT generation rates for both the p-channel and n-channel operating modes are nearly independent of the bending state (strain = 0.8%) of the plastic substrate.

Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates

International Nuclear Information System (INIS)

Lee, Myeongwon; Koo, Jamin; Chung, Eun-Ae; Jeong, Dong-Young; Kim, Sangsig; Koo, Yong-Seo

2009-01-01

A technique to implement silicon nanowire (SiNW)-based tunneling field-effect transistors (TFETs) on flexible plastic substrates is developed for the first time. The p-i-n configured Si NWs are obtained from an Si wafer using a conventional top-down CMOS-compatible technology, and they are then transferred onto the plastic substrate. Based on gate-controlled band-to-band tunneling (BTBT) as their working principle, the SiNW-based TFETs show normal p-channel switching behavior with a threshold voltage of -1.86 V and a subthreshold swing of 827 mV/dec. In addition, ambipolar conduction is observed due to the presence of the BTBT between the heavily doped p + drain and n + channel regions, indicating that our TFETs can operate in the n-channel mode as well. Furthermore, the BTBT generation rates for both the p-channel and n-channel operating modes are nearly independent of the bending state (strain = 0.8%) of the plastic substrate.

Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates

Energy Technology Data Exchange (ETDEWEB)

Lee, Myeongwon; Koo, Jamin; Chung, Eun-Ae; Jeong, Dong-Young; Kim, Sangsig [Department of Electrical Engineering and Institute for Nano Science, Korea University, 5-1, Anam-Dong, Seongbuk-Gu, Seoul 136-701 (Korea, Republic of); Koo, Yong-Seo, E-mail: sangsig@korea.ac.k [Department of Electrical Engineering, Seokyeong University, 16-1, Jungneung-dong, Seongbuk-gu, Seoul 136-704 (Korea, Republic of)

2009-11-11

A technique to implement silicon nanowire (SiNW)-based tunneling field-effect transistors (TFETs) on flexible plastic substrates is developed for the first time. The p-i-n configured Si NWs are obtained from an Si wafer using a conventional top-down CMOS-compatible technology, and they are then transferred onto the plastic substrate. Based on gate-controlled band-to-band tunneling (BTBT) as their working principle, the SiNW-based TFETs show normal p-channel switching behavior with a threshold voltage of -1.86 V and a subthreshold swing of 827 mV/dec. In addition, ambipolar conduction is observed due to the presence of the BTBT between the heavily doped p{sup +} drain and n{sup +} channel regions, indicating that our TFETs can operate in the n-channel mode as well. Furthermore, the BTBT generation rates for both the p-channel and n-channel operating modes are nearly independent of the bending state (strain = 0.8%) of the plastic substrate.

Plasmonic Waveguide-Integrated Nanowire Laser

DEFF Research Database (Denmark)

Bermudez-Urena, Esteban; Tutuncuoglu, Gozde; Cuerda, Javier

2017-01-01

technologies. Despite significant advances in their fundamental aspects, the integration within scalable photonic circuitry remains challenging. Here we report on the realization of hybrid photonic devices consisting of nanowire lasers integrated with wafer-scale lithographically designed V-groove plasmonic......Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing to data communication...

Large-area perovskite nanowire arrays fabricated by large-scale roll-to-roll micro-gravure printing and doctor blading

Science.gov (United States)

Hu, Qiao; Wu, Han; Sun, Jia; Yan, Donghang; Gao, Yongli; Yang, Junliang

2016-02-01

Organic-inorganic hybrid halide perovskite nanowires (PNWs) show great potential applications in electronic and optoelectronic devices such as solar cells, field-effect transistors and photodetectors. It is very meaningful to fabricate ordered, large-area PNW arrays and greatly accelerate their applications and commercialization in electronic and optoelectronic devices. Herein, highly oriented and ultra-long methylammonium lead iodide (CH3NH3PbI3) PNW array thin films were fabricated by large-scale roll-to-roll (R2R) micro-gravure printing and doctor blading in ambient environments (humility ~45%, temperature ~28 °C), which produced PNW lengths as long as 15 mm. Furthermore, photodetectors based on these PNWs were successfully fabricated on both silicon oxide (SiO2) and flexible polyethylene terephthalate (PET) substrates and showed moderate performance. This study provides low-cost, large-scale techniques to fabricate large-area PNW arrays with great potential applications in flexible electronic and optoelectronic devices.Organic-inorganic hybrid halide perovskite nanowires (PNWs) show great potential applications in electronic and optoelectronic devices such as solar cells, field-effect transistors and photodetectors. It is very meaningful to fabricate ordered, large-area PNW arrays and greatly accelerate their applications and commercialization in electronic and optoelectronic devices. Herein, highly oriented and ultra-long methylammonium lead iodide (CH3NH3PbI3) PNW array thin films were fabricated by large-scale roll-to-roll (R2R) micro-gravure printing and doctor blading in ambient environments (humility ~45%, temperature ~28 °C), which produced PNW lengths as long as 15 mm. Furthermore, photodetectors based on these PNWs were successfully fabricated on both silicon oxide (SiO2) and flexible polyethylene terephthalate (PET) substrates and showed moderate performance. This study provides low-cost, large-scale techniques to fabricate large-area PNW arrays

Contact planarization of ensemble nanowires

Science.gov (United States)

Chia, A. C. E.; LaPierre, R. R.

2011-06-01

The viability of four organic polymers (S1808, SC200, SU8 and Cyclotene) as filling materials to achieve planarization of ensemble nanowire arrays is reported. Analysis of the porosity, surface roughness and thermal stability of each filling material was performed. Sonication was used as an effective method to remove the tops of the nanowires (NWs) to achieve complete planarization. Ensemble nanowire devices were fully fabricated and I-V measurements confirmed that Cyclotene effectively planarizes the NWs while still serving the role as an insulating layer between the top and bottom contacts. These processes and analysis can be easily implemented into future characterization and fabrication of ensemble NWs for optoelectronic device applications.

Flexible Gallium Nitride for High-Performance, Strainable Radio-Frequency Devices.

Science.gov (United States)

Glavin, Nicholas R; Chabak, Kelson D; Heller, Eric R; Moore, Elizabeth A; Prusnick, Timothy A; Maruyama, Benji; Walker, Dennis E; Dorsey, Donald L; Paduano, Qing; Snure, Michael

2017-12-01

Flexible gallium nitride (GaN) thin films can enable future strainable and conformal devices for transmission of radio-frequency (RF) signals over large distances for more efficient wireless communication. For the first time, strainable high-frequency RF GaN devices are demonstrated, whose exceptional performance is enabled by epitaxial growth on 2D boron nitride for chemical-free transfer to a soft, flexible substrate. The AlGaN/GaN heterostructures transferred to flexible substrates are uniaxially strained up to 0.85% and reveal near state-of-the-art values for electrical performance, with electron mobility exceeding 2000 cm 2 V -1 s -1 and sheet carrier density above 1.07 × 10 13 cm -2 . The influence of strain on the RF performance of flexible GaN high-electron-mobility transistor (HEMT) devices is evaluated, demonstrating cutoff frequencies and maximum oscillation frequencies greater than 42 and 74 GHz, respectively, at up to 0.43% strain, representing a significant advancement toward conformal, highly integrated electronic materials for RF applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bioinspired Graphene-Based Nanocomposites and Their Application in Flexible Energy Devices.

Science.gov (United States)

Wan, Sijie; Peng, Jingsong; Jiang, Lei; Cheng, Qunfeng

2016-09-01

Graphene is the strongest and stiffest material ever identified and the best electrical conductor known to date, making it an ideal candidate for constructing nanocomposites used in flexible energy devices. However, it remains a great challenge to assemble graphene nanosheets into macro-sized high-performance nanocomposites in practical applications of flexible energy devices using traditional approaches. Nacre, the gold standard for biomimicry, provides an excellent example and guideline for assembling two-dimensional nanosheets into high-performance nanocomposites. This review summarizes recent research on the bioinspired graphene-based nanocomposites (BGBNs), and discusses different bioinspired assembly strategies for constructing integrated high-strength and -toughness graphene-based nanocomposites through various synergistic effects. Fundamental properties of graphene-based nanocomposites, such as strength, toughness, and electrical conductivities, are highlighted. Applications of the BGBNs in flexible energy devices, as well as potential challenges, are addressed. Inspired from the past work done by the community a roadmap for the future of the BGBNs in flexible energy device applications is depicted. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Top-down Fabrication and Enhanced Active Area Electronic Characteristics of Amorphous Oxide Nanoribbons for Flexible Electronics.

Science.gov (United States)

Jang, Hyun-June; Joong Lee, Ki; Jo, Kwang-Won; Katz, Howard E; Cho, Won-Ju; Shin, Yong-Beom

2017-07-18

Inorganic amorphous oxide semiconductor (AOS) materials such as amorphous InGaZnO (a-IGZO) possess mechanical flexibility and outstanding electrical properties, and have generated great interest for use in flexible and transparent electronic devices. In the past, however, AOS devices required higher activation energies, and hence higher processing temperatures, than organic ones to neutralize defects. It is well known that one-dimensional nanowires tend to have better carrier mobility and mechanical strength along with fewer defects than the corresponding two-dimensional films, but until now it has been difficult, costly, and impractical to fabricate such nanowires in proper alignments by either "bottom-up" growth techniques or by "top-down" e-beam lithography. Here we show a top-down, cost-effective, and scalable approach for the fabrication of parallel, laterally oriented AOS nanoribbons based on lift-off and nano-imprinting. High mobility (132 cm 2 /Vs), electrical stability, and transparency are obtained in a-IGZO nanoribbons, compared to the planar films of the same a-IGZO semiconductor.

Wearable Intrinsically Soft, Stretchable, Flexible Devices for Memories and Computing.

Science.gov (United States)

Rajan, Krishna; Garofalo, Erik; Chiolerio, Alessandro

2018-01-27

A recent trend in the development of high mass consumption electron devices is towards electronic textiles (e-textiles), smart wearable devices, smart clothes, and flexible or printable electronics. Intrinsically soft, stretchable, flexible, Wearable Memories and Computing devices (WMCs) bring us closer to sci-fi scenarios, where future electronic systems are totally integrated in our everyday outfits and help us in achieving a higher comfort level, interacting for us with other digital devices such as smartphones and domotics, or with analog devices, such as our brain/peripheral nervous system. WMC will enable each of us to contribute to open and big data systems as individual nodes, providing real-time information about physical and environmental parameters (including air pollution monitoring, sound and light pollution, chemical or radioactive fallout alert, network availability, and so on). Furthermore, WMC could be directly connected to human brain and enable extremely fast operation and unprecedented interface complexity, directly mapping the continuous states available to biological systems. This review focuses on recent advances in nanotechnology and materials science and pays particular attention to any result and promising technology to enable intrinsically soft, stretchable, flexible WMC.

Investigation of mechanical bending instability in flexible low-temperature-processed electrochromic display devices

Energy Technology Data Exchange (ETDEWEB)

Cheng, Chin-Pao; Chou, Chuan-Pu; Hsu, Che-Hsiang; Teng, Tun-Chien; Cheng, Chun-Hu, E-mail: chcheng@ntnu.edu.tw; Syu, Yu-Yang

2015-06-01

In this study, polyethylene naphthalate (PEN) was investigated as a flexible substrate because, compared with polyethylene terephthalate, it achieves a lower root mean square roughness and transmittance, which is favorable for reducing leakage from the bottom of flexible substrates. A flexible device structure composed of tungsten oxide/indium-doped tin oxide/PEN was used in an electrochromic (EC) test. The experimental results show that the flexible EC display device achieved a high transmittance difference of > 40% and color efficiency of 70.2 cm{sup 2}/C at 560 nm. The transmittance difference was degraded in the visible range after 200 cycles of continuous bending. Furthermore, compared with flat fresh devices, the WO{sub 3} device exhibited poor retention properties in a colored state after being subjected to longer bending cycles. - Highlights: • Flexible electrochromic device with endurance bending was demonstrated. • Interface defects or vacancies near the flexible substrate affect the self-bleaching behavior. • High color efficiency of 117.2 cm{sup 2}/coul at 700 nm wavelength is reached. • Interface defect centers lower the redox energy barrier which reduces the bleaching time.

Failure mechanisms and electromechanical coupling in semiconducting nanowires

Directory of Open Access Journals (Sweden)

Peng B.

2010-06-01

Full Text Available One dimensional nanostructures, like nanowires and nanotubes, are increasingly being researched for the development of next generation devices like logic gates, transistors, and solar cells. In particular, semiconducting nanowires with a nonsymmetric wurtzitic crystal structure, such as zinc oxide (ZnO and gallium nitride (GaN, have drawn immense research interests due to their electromechanical coupling. The designing of the future nanowire-based devices requires component-level characterization of individual nanowires. In this paper, we present a unique experimental set-up to characterize the mechanical and electromechanical behaviour of individual nanowires. Using this set-up and complementary atomistic simulations, mechanical properties of ZnO nanowires and electromechanical properties of GaN nanowires were investigated. In ZnO nanowires, elastic modulus was found to depend on nanowire diameter decreasing from 190 GPa to 140 GPa as the wire diameter increased from 5 nm to 80 nm. Inconsistent failure mechanisms were observed in ZnO nanowires. Experiments revealed a brittle fracture, whereas simulations using a pairwise potential predicted a phase transformation prior to failure. This inconsistency is addressed in detail from an experimental as well as computational perspective. Lastly, in addition to mechanical properties, preliminary results on the electromechanical properties of gallium nitride nanowires are also reported. Initial investigations reveal that the piezoresistive and piezoelectric behaviour of nanowires is different from bulk gallium nitride.

Fabrication of Flexible, Fully Organic, Degradable Energy Storage Devices Using Silk Proteins.

Science.gov (United States)

Pal, Ramendra K; Kundu, Subhas C; Yadavalli, Vamsi K

2018-03-21

Flexible and thin-film devices are of great interest in epidermal and implantable bioelectronics. The integration of energy storage and delivery devices such as supercapacitors (SCs) with properties such as flexibility, miniaturization, biocompatibility, and degradability are sought for such systems. Reducing e-waste and using sustainable materials and processes are additional desirable qualities. Herein, a silk protein-based biocompatible and degradable thin-film microSC (μSC) is reported. A protein carrier with the conducting polymer poly(3,4-ethylenedioxythiophene) polystyrene sulfonate and reduced graphene oxide dopant is used as a photopatternable biocomposite ink. Active electrodes are fabricated using photolithography under benign conditions, using only water as the solvent. These electrodes are printed on flexible protein sheets to form degradable, organic devices with a benign agarose-NaCl gel electrolyte. High capacitance, power density, cycling stability over 500 cycles, and the ability to power a light-emitting diode are shown. The device is flexible, can sustain cyclic mechanical stresses over 450 cycles, and retain capacitive properties over several days in liquid. Significantly, the μSCs are cytocompatible and completely degraded over the period of ∼1 month. By precise control of the device configuration, these silk protein-based, all-polymer organic devices can be designed to be tunably transient and provide viable alternatives for powering flexible and implantable bioelectronics.

High-Performance Supercapacitors from Niobium Nanowire Yarns.

Science.gov (United States)

Mirvakili, Seyed M; Mirvakili, Mehr Negar; Englezos, Peter; Madden, John D W; Hunter, Ian W

2015-07-01

The large-ion-accessible surface area of carbon nanotubes (CNTs) and graphene sheets formed as yarns, forests, and films enables miniature high-performance supercapacitors with power densities exceeding those of electrolytics while achieving energy densities equaling those of batteries. Capacitance and energy density can be enhanced by depositing highly pseudocapacitive materials such as conductive polymers on them. Yarns formed from carbon nanotubes are proposed for use in wearable supercapacitors. In this work, we show that high power, energy density, and capacitance in yarn form are not unique to carbon materials, and we introduce niobium nanowires as an alternative. These yarns show higher capacitance and energy per volume and are stronger and 100 times more conductive than similarly spun carbon multiwalled nanotube (MWNT) and graphene yarns. The long niobium nanowires, formed by repeated extrusion and drawing, achieve device volumetric peak power and energy densities of 55 MW·m(-3) (55 W·cm(-3)) and 25 MJ·m(-3) (7 mWh·cm(-3)), 2 and 5 times higher than that for state-of-the-art CNT yarns, respectively. The capacitance per volume of Nb nanowire yarn is lower than the 158 MF·m(-3) (158 F·cm(-3)) reported for carbon-based materials such as reduced graphene oxide (RGO) and CNT wet-spun yarns, but the peak power and energy densities are 200 and 2 times higher, respectively. Achieving high power in long yarns is made possible by the high conductivity of the metal, and achievement of high energy density is possible thanks to the high internal surface area. No additional metal backing is needed, unlike for CNT yarns and supercapacitors in general, saving substantial space. As the yarn is infiltrated with pseudocapacitive materials such as poly(3,4-ethylenedioxythiophene) (PEDOT), the energy density is further increased to 10 MJ·m(-3) (2.8 mWh·cm(-3)). Similar to CNT yarns, niobium nanowire yarns are highly flexible and show potential for weaving into textiles

Single Nanowire Probe for Single Cell Endoscopy and Sensing

Science.gov (United States)

Yan, Ruoxue

The ability to manipulate light in subwavelength photonic and plasmonic structures has shown great potentials in revolutionizing how information is generated, transformed and processed. Chemically synthesized nanowires, in particular, offers a unique toolbox not only for highly compact and integrated photonic modules and devices, including coherent and incoherent light sources, waveguides, photodetectors and photovoltaics, but also for new types of nanoscopic bio-probes for spot cargo delivery and in-situ single cell endoscopy and sensing. Such nanowire probes would enable us to carry out intracellular imaging and probing with high spatial resolution, monitor in-vivo biological processes within single living cells and greatly improve our fundamental understanding of cell functions, intracellular physiological processes, and cellular signal pathways. My work is aimed at developing a material and instrumental platform for such single nanowire probe. Successful optical integration of Ag nanowire plasmonic waveguides, which offers deep subwavelength mode confinement, and conventional photonic waveguides was demonstrated on a single nanowire level. The highest plasmonic-photonic coupling efficiency coupling was found at small coupling angles and low input frequencies. The frequency dependent propagation loss was observed in Ag nanowire and was confirmed by quantitative measurement and in agreement with theoretical expectations. Rational integration of dielectric and Ag nanowire waveguide components into hybrid optical-plasmonic routing devices has been demonstrated. This capability is essential for incorporating sub-100nm Ag nanowire waveguides into optical fiber based nanoprobes for single cell endoscopy. The nanoprobe system based on single nanowire waveguides was demonstrated by optically coupling semiconductor or metal nanowire with an optical fiber with tapered tip. This nanoprobe design requires minimal instrumentation which makes it cost efficient and readily

Long term stability of nanowire nanoelectronics in physiological environments.

Science.gov (United States)

Zhou, Wei; Dai, Xiaochuan; Fu, Tian-Ming; Xie, Chong; Liu, Jia; Lieber, Charles M

2014-03-12

Nanowire nanoelectronic devices have been exploited as highly sensitive subcellular resolution detectors for recording extracellular and intracellular signals from cells, as well as from natural and engineered/cyborg tissues, and in this capacity open many opportunities for fundamental biological research and biomedical applications. Here we demonstrate the capability to take full advantage of the attractive capabilities of nanowire nanoelectronic devices for long term physiological studies by passivating the nanowire elements with ultrathin metal oxide shells. Studies of Si and Si/aluminum oxide (Al2O3) core/shell nanowires in physiological solutions at 37 °C demonstrate long-term stability extending for at least 100 days in samples coated with 10 nm thick Al2O3 shells. In addition, investigations of nanowires configured as field-effect transistors (FETs) demonstrate that the Si/Al2O3 core/shell nanowire FETs exhibit good device performance for at least 4 months in physiological model solutions at 37 °C. The generality of this approach was also tested with in studies of Ge/Si and InAs nanowires, where Ge/Si/Al2O3 and InAs/Al2O3 core/shell materials exhibited stability for at least 100 days in physiological model solutions at 37 °C. In addition, investigations of hafnium oxide-Al2O3 nanolaminated shells indicate the potential to extend nanowire stability well beyond 1 year time scale in vivo. These studies demonstrate that straightforward core/shell nanowire nanoelectronic devices can exhibit the long term stability needed for a range of chronic in vivo studies in animals as well as powerful biomedical implants that could improve monitoring and treatment of disease.

All-phosphorus flexible devices with non-collinear electrodes: a first principles study.

Science.gov (United States)

Li, Junjun; Ruan, Lufeng; Wu, Zewen; Zhang, Guiling; Wang, Yin

2018-03-07

With the continuous expansion of the family of two-dimensional (2D) materials, flexible electronics based on 2D materials have quickly emerged. Theoretically, predicting the transport properties of the flexible devices made up of 2D materials using first principles is of great importance. Using density functional theory combined with the non-equilibrium Green's function formalism, we calculated the transport properties of all-phosphorus flexible devices with non-collinear electrodes, and the results predicted that the device with compressed metallic phosphorene electrodes sandwiching a P-type semiconducting phosphorene shows a better and robust conducting behavior against the bending of the semiconducting region when the angle between the two electrodes is less than 45°, which indicates that this system is very promising for flexible electronics. The calculation of a quantum transport system with non-collinear electrodes demonstrated in this work will provide more interesting information on mesoscopic material systems and related devices.

Effect of inhomogeneous Schottky barrier height of SnO2 nanowires device

Science.gov (United States)

Amorim, Cleber A.; Bernardo, Eric P.; Leite, Edson R.; Chiquito, Adenilson J.

2018-05-01

The current–voltage (I–V) characteristics of metal–semiconductor junction (Au–Ni/SnO2/Au–Ni) Schottky barrier in SnO2 nanowires were investigated over a wide temperature range. By using the Schottky–Mott model, the zero bias barrier height Φ B was estimated from I–V characteristics, and it was found to increase with increasing temperature; on the other hand the ideality factor (n) was found to decrease with increasing temperature. The variation in the Schottky barrier and n was attributed to the spatial inhomogeneity of the Schottky barrier height. The experimental I–V characteristics exhibited a Gaussian distribution having mean barrier heights {\\overline{{{Φ }}}}B of 0.30 eV and standard deviation σ s of 60 meV. Additionally, the Richardson modified constant was obtained to be 70 A cm‑2 K‑2, leading to an effective mass of 0.58m 0. Consequently, the temperature dependence of I–V characteristics of the SnO2 nanowire devices can be successfully explained on the Schottky–Mott theory framework taking into account a Gaussian distribution of barrier heights.

Mechanism and Growth of Flexible ZnO Nanostructure Arrays in a Facile Controlled Way

Directory of Open Access Journals (Sweden)

Yangping Sheng

2011-01-01

Full Text Available Nanostructure arrays-based flexible devices have revolutionary impacts on the application of traditional semiconductor devices. Here, a one-step method to synthesize flexible ZnO nanostructure arrays on Zn-plated flexible substrate in Zn(NO32/NH3⋅H2O solution system at 70–90∘C was developed. We found out that the decomposition of Zn(OH2 precipitations, formed in lower NH3⋅H2O concentration, in the bulk solution facilitates the formation of flower-like structure. In higher temperature, 90∘C, ZnO nanoplate arrays were synthesized by the hydrolysis of zinc hydroxide. Highly dense ZnO nanoparticale layer formed by the reaction of NH3⋅H2O with Zn plating layer in the initial self-seed process could improve the vertical alignment of the nanowires arrays. The diameter of ZnO nanowire arrays, from 200 nm to 60 nm, could be effectively controlled by changing the stability of Zn(NH342+ complex ions by varying the ratio of Zn(NO32 to NH3⋅H2O which further influence the release rate of Zn2+ ions. This is also conformed by different amounts of the Zn vacancy as determined by different UV emissions of the PL spectra in the range of 380–403 nm.

WO{sub 3-x}/MoO{sub 3-x} core/shell nanowires on carbon fabric as an anode for all-solid-state asymmetric supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Xiao, Xu; Ding, Tianpeng; Yuan, Longyan; Shen, Yongqi; Zhong, Qize; Zhang, Xianghui; Cao, Yuanzhi; Hu, Bin; Zhou, Jun [Wuhan National Laboratory for Optoelectronics (WNLO), College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan (China); Zhai, Teng; Tong, Yexiang [School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou (China); Gong, Li; Chen, Jian [Instrumental Analysis and Research Center, Sun Yat-sen University, Guangzhou (China); Wang, Zhong Lin [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA (United States)

2012-11-15

Flexible all-solid-state asymmetric supercapacitors (ASCs) are fabricated from a novel anode - WO{sub 3-x}/MoO{sub 3-x} core/shell nanowires on carbon fabric - and a polyaniline cathode (figure). In addition to the high electrochemical performance of the devices, other characteristics, such as low toxicity, flexibility, environmental compatibility, light weight, and low requirements for packaging, make the all-solid-state ASCs potential candidates for applications in energy storage, flexible electronics, and other consumer electronics. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Preparation of smooth, flexible and stable silver nanowires- polyurethane composite transparent conductive films by transfer method

Science.gov (United States)

Bai, Shengchi; Wang, Haifeng; Yang, Hui; Zhang, He; Guo, Xingzhong

2018-02-01

Silver nanowires (AgNWs)-polyurethane (PU) composite transparent conductive films were fabricated via transfer method using AgNWs conductive inks and polyurethane as starting materials, and the effects of post-treatments including heat treatment, NaCl solution bath and HCl solution bath for AgNWs film on the sheet resistance and transmittance of the composite films were respectively investigated in detail. AgNWs networks are uniformly embedded in the PU layer to improve the adhesion and reduce the surface roughness of AgNWs-PU composite films. Heat treatment can melt and weld the nanowires, and NaCl and HCl solution baths promote the dissolution and re-deposition of silver and the dissolving of the polymer, both which form conduction pathways and improve contact of AgNWs for reducing the sheet resistance. Smooth and flexible AgNWs-PU composite film with a transmittance of 85% and a sheet resistance of 15 Ω · sq‑1 is obtained after treated in 0.5 wt% HCl solution bath for 60 s, and the optoelectronic properties of the resultant composite film can maintain after 1000 cycles of bending and 100 days.

Silver Nanowire Arrays : Fabrication and Applications

OpenAIRE

Feng, Yuyi

2016-01-01

Nanowire arrays have increasingly received attention for their use in a variety of applications such as surface-enhanced Raman scattering (SERS), plasmonic sensing, and electrodes for photoelectric devices. However, until now, large scale fabrication of device-suitable metallic nanowire arrays on supporting substrates has seen very limited success. This thesis describes my work rst on the development of a novel successful processing route for the fabrication of uniform noble metallic (e.g. A...

Semiconductor-based, large-area, flexible, electronic devices on {110} oriented substrates

Science.gov (United States)

Goyal, Amit

2014-08-05

Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110} textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

[100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices

Science.gov (United States)

Goyal, Amit

2015-03-24

Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Flexible organic light emitting diodes fabricated on biocompatible silk fibroin substrate

International Nuclear Information System (INIS)

Liu, Yuqiang; Xie, Yuemin; Liu, Yuan; Song, Tao; Liao, Liangsheng; Sun, Baoquan; Zhang, Ke-Qin

2015-01-01

Flexible and biodegradable electronics are currently under extensive investigation for biocompatible and environmentally-friendly applications. Synthetic plastic foils are widely used as substrates for flexible electronics. But typical plastic substrates such as polyethylene naphthalate (PEN) could not be degraded in a natural bio-environment. A great demand still exists for a next-generation biocompatible and biodegradable substrate for future application. For example, electronic devices can be potentially integrated into the human body. In this work, we demonstrate that the biocompatible and biodegradable natural silk fibroin (SF) films embedded with silver nanowires (AgNWs) mesh could be employed as conductive transparent substrates to fabricate flexible organic light emitting diodes (OLEDs). Compared with commercial PEN substrates coated with indium tin oxide, the AgNWs/SF composite substrates exhibit a similar sheet resistance of 12 Ω sq −1 , a lower surface roughness, as well as a broader light transmission range. Flexible OLEDs based on AgNWs/SF substrates achieve a current efficiency of 19 cd A −1 , demonstrating the potential of the flexible AgNWs/SF films as conductive and transparent substrates for next-generation biodegradable devices. (paper)

Flexible organic light emitting diodes fabricated on biocompatible silk fibroin substrate

Science.gov (United States)

Liu, Yuqiang; Xie, Yuemin; Liu, Yuan; Song, Tao; Zhang, Ke-Qin; Liao, Liangsheng; Sun, Baoquan

2015-10-01

Flexible and biodegradable electronics are currently under extensive investigation for biocompatible and environmentally-friendly applications. Synthetic plastic foils are widely used as substrates for flexible electronics. But typical plastic substrates such as polyethylene naphthalate (PEN) could not be degraded in a natural bio-environment. A great demand still exists for a next-generation biocompatible and biodegradable substrate for future application. For example, electronic devices can be potentially integrated into the human body. In this work, we demonstrate that the biocompatible and biodegradable natural silk fibroin (SF) films embedded with silver nanowires (AgNWs) mesh could be employed as conductive transparent substrates to fabricate flexible organic light emitting diodes (OLEDs). Compared with commercial PEN substrates coated with indium tin oxide, the AgNWs/SF composite substrates exhibit a similar sheet resistance of 12 Ω sq-1, a lower surface roughness, as well as a broader light transmission range. Flexible OLEDs based on AgNWs/SF substrates achieve a current efficiency of 19 cd A-1, demonstrating the potential of the flexible AgNWs/SF films as conductive and transparent substrates for next-generation biodegradable devices.

Electrochemical synthesis of highly crystalline copper nanowires

International Nuclear Information System (INIS)

Kaur, Amandeep; Gupta, Tanish; Kumar, Akshay; Kumar, Sanjeev; Singh, Karamjeet; Thakur, Anup

2015-01-01

Copper nanowires were fabricated within the pores of anodic alumina template (AAT) by template synthesis method at pH = 2.9. X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) were used to investigate the structure, morphology and composition of fabricated nanowires. These characterizations revealed that the deposited copper nanowires were highly crystalline in nature, dense and uniform. The crystalline copper nanowires are promising in application of future nanoelectronic devices and circuits

As-Grown Gallium Nitride Nanowire Electromechanical Resonators

Science.gov (United States)

Montague, Joshua R.

Technological development in recent years has led to a ubiquity of micro- and nano-scale electromechanical devices. Sensors for monitoring temperature, pressure, mass, etc., are now found in nearly all electronic devices at both the industrial and consumer levels. As has been true for integrated circuit electronics, these electromechanical devices have continued to be scaled down in size. For many nanometer-scale structures with large surface-to-volume ratio, dissipation (energy loss) becomes prohibitively large causing a decreasing sensitivity with decreasing sensor size. In this work, gallium nitride (GaN) nanowires are investigated as singly-clamped (cantilever) mechanical resonators with typical mechanical quality factors, Q (equal to the ratio of resonance frequency to peak full-width-at-half-maximum-power) and resonance frequencies, respectively, at or above 30,000, and near 1 MHz. These Q values---in vacuum at room temperature---indicate very low levels of dissipation; they are essentially the same as those for bulk quartz crystal resonators that form the basis of simple clocks and mass sensors. The GaN nanowires have lengths and diameters, respectively, of approximately 15 micrometers and hundreds of nanometers. As-grown GaN nanowire Q values are larger than other similarly-sized, bottom-up, cantilever resonators and this property makes them very attractive for use as resonant sensors. We demonstrate the capability of detecting sub-monolayer levels of atomic layer deposited (ALD) films, and the robust nature of the GaN nanowires structure that allows for their 'reuse' after removal of such layers. In addition to electron microscope-based measurement techniques, we demonstrate the successful capacitive detection of a single nanowire using microwave homodyne reflectometry. This technique is then extended to allow for simultaneous measurements of large ensembles of GaN nanowires on a single sample, providing statistical information about the distribution of

Synthesis, fabrication and characterization of Ge/Si axial nanowire heterostructure tunnel FETs

Energy Technology Data Exchange (ETDEWEB)

Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

2010-01-01

Axial Ge/Si heterostructure nanowires allow energy band-edge engineering along the axis of the nanowire, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two advances in the area of heterostructure nanowires and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure nanowires with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these nanowires for high-on currents and suppressed ambipolar behavior. Initial prototype devices resulted in a current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. These results demonstrate the potential of such asymmetric heterostructures (both in the semiconductor channel and metal-semiconductor barrier heights) for low-power and high performance electronics.

Passive high-frequency devices based on superlattice ferromagnetic nanowires

International Nuclear Information System (INIS)

Ye, B.; Li, F.; Cimpoesu, D.; Wiley, J.B.; Jung, J.-S.; Stancu, A.; Spinu, L.

2007-01-01

In this paper we propose to tailor the bandwidth of a microwave filter by exploitation of shape anisotropy of nanowires. In order to achieve this control of shape anisotropy, we considered superlattice wires containing varying-sized ferromagnetic regions separated by nonferromagnetic regions. Superlattice wires of Ni and Au with a nominal diameter of 200 nm were grown using standard electrodeposition techniques. The microwave properties were probed using X-band (9.8 GHz) ferromagnetic resonance (FMR) experiments performed at room temperature. In order to investigate the effectiveness of the shape anisotropy on the superlattice nanowire based filter the FMR spectrum of superlattice structure is compared to the FMR spectra of nanowires samples with constant length

Asymmetric contacts on a single SnO₂ nanowire device: an investigation using an equivalent circuit model.

Science.gov (United States)

Huh, Junghwan; Na, Junhong; Ha, Jeong Sook; Kim, Sangtae; Kim, Gyu Tae

2011-08-01

Electrical contacts between the nanomaterial and metal electrodes are of crucial importance both from fundamental and practical points of view. We have systematically compared the influence of contact properties by dc and EIS (Electrochemical impedance spectroscopy) techniques at various temperatures and environmental atmospheres (N(2) and 1% O(2)). Electrical behaviors are sensitive to the variation of Schottky barriers, while the activation energy (E(a)) depends on the donor states in the nanowire rather than on the Schottky contact. Equivalent circuits in terms of dc and EIS analyses could be modeled by Schottky diodes connected with a series resistance and parallel RC circuits, respectively. These results can facilitate the electrical analysis for evaluating the nanowire electronic devices with Schottky contacts.

Flexible All-Inorganic Perovskite CsPbBr3 Nonvolatile Memory Device.

Science.gov (United States)

Liu, Dongjue; Lin, Qiqi; Zang, Zhigang; Wang, Ming; Wangyang, Peihua; Tang, Xiaosheng; Zhou, Miao; Hu, Wei

2017-02-22

All-inorganic perovskite CsPbX 3 (X = Cl, Br, or I) is widely used in a variety of photoelectric devices such as solar cells, light-emitting diodes, lasers, and photodetectors. However, studies to understand the flexible CsPbX 3 electrical application are relatively scarce, mainly due to the limitations of the low-temperature fabricating process. In this study, all-inorganic perovskite CsPbBr 3 films were successfully fabricated at 75 °C through a two-step method. The highly crystallized films were first employed as a resistive switching layer in the Al/CsPbBr 3 /PEDOT:PSS/ITO/PET structure for flexible nonvolatile memory application. The resistive switching operations and endurance performance demonstrated the as-prepared flexible resistive random access memory devices possess reproducible and reliable memory characteristics. Electrical reliability and mechanical stability of the nonvolatile device were further tested by the robust current-voltage curves under different bending angles and consecutive flexing cycles. Moreover, a model of the formation and rupture of filaments through the CsPbBr 3 layer was proposed to explain the resistive switching effect. It is believed that this study will offer a new setting to understand and design all-inorganic perovskite materials for future stable flexible electronic devices.

Flexible Semitransparent Energy Harvester with High Pressure Sensitivity and Power Density Based on Laterally Aligned PZT Single-Crystal Nanowires.

Science.gov (United States)

Zhao, Quan-Liang; He, Guang-Ping; Di, Jie-Jian; Song, Wei-Li; Hou, Zhi-Ling; Tan, Pei-Pei; Wang, Da-Wei; Cao, Mao-Sheng

2017-07-26

A flexible semitransparent energy harvester is assembled based on laterally aligned Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) single-crystal nanowires (NWs). Such a harvester presents the highest open-circuit voltage and a stable area power density of up to 10 V and 0.27 μW/cm 2 , respectively. A high pressure sensitivity of 0.14 V/kPa is obtained in the dynamic pressure sensing, much larger than the values reported in other energy harvesters based on piezoelectric single-crystal NWs. Furthermore, theoretical and finite element analyses also confirm that the piezoelectric voltage constant g 33 of PZT NWs is competitive to the lead-based bulk single crystals and ceramics, and the enhanced pressure sensitivity and power density are substantially linked to the flexible structure with laterally aligned PZT NWs. The energy harvester in this work holds great potential in flexible and transparent sensing and self-powered systems.

Electrical conductivity measurements of bacterial nanowires from Pseudomonas aeruginosa

International Nuclear Information System (INIS)

Maruthupandy, Muthusamy; Anand, Muthusamy; Beevi, Akbar Sait Hameedha; Priya, Radhakrishnan Jeeva; Maduraiveeran, Govindhan

2015-01-01

The extracellular appendages of bacteria (flagella) that transfer electrons to electrodes are called bacterial nanowires. This study focuses on the isolation and separation of nanowires that are attached via Pseudomonas aeruginosa bacterial culture. The size and roughness of separated nanowires were measured using transmission electron microscopy (TEM) and atomic force microscopy (AFM), respectively. The obtained bacterial nanowires indicated a clear image of bacterial nanowires measuring 16 nm in diameter. The formation of bacterial nanowires was confirmed by microscopic studies (AFM and TEM) and the conductivity nature of bacterial nanowire was investigated by electrochemical techniques. Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS), which are nondestructive voltammetry techniques, suggest that bacterial nanowires could be the source of electrons—which may be used in various applications, for example, microbial fuel cells, biosensors, organic solar cells, and bioelectronic devices. Routine analysis of electron transfer between bacterial nanowires and the electrode was performed, providing insight into the extracellular electron transfer (EET) to the electrode. CV revealed the catalytic electron transferability of bacterial nanowires and electrodes and showed excellent redox activities. CV and EIS studies showed that bacterial nanowires can charge the surface by producing and storing sufficient electrons, behave as a capacitor, and have features consistent with EET. Finally, electrochemical studies confirmed the development of bacterial nanowires with EET. This study suggests that bacterial nanowires can be used to fabricate biomolecular sensors and nanoelectronic devices. (paper)

Transport Phenomena in Nanowires, Nanotubes, and Other Low-Dimensional Systems

KAUST Repository

Montes, Enrique

2017-01-01

Nanoscale materials are not new in either nature or physics. However, the recent technological improvements have given scientists new tools to understand and quantify phenomena that occur naturally due to quantum confinement effects. In general, these phenomena induce remarkable optical, magnetic, and electronic properties in nanoscale materials in contrast to their bulk counterpart. In addition, scientists have recently developed the necessary tools to control and exploit these properties in electronic devices, in particular field effect transistors, magnetic memories, and gas sensors. In the present thesis we implement theoretical and computational tools for analyzing the ground state and electronic transport properties of nanoscale materials and their performance in electronic devices. The ground state properties are studied within density functional theory using the SIESTA code, whereas the transport properties are investigated using the non-equilibrium Green\\'s functions formalism implemented in the SMEAGOL code. First we study Si-based systems, as Si nanowires are believed to be important building blocks of the next generation of electronic devices. We derive the electron transport properties of Si nanowires connected to Au electrodes and their dependence on the nanowire growth direction, diameter, and length. At equilibrium Au-nanowire distance we find strong electronic coupling between electrodes and nanowire, resulting in low contact resistance. For the tunneling regime, the decay of the conductance with the nanowire length is rationalized using the complex band structure. The nanowires grown along the (110) direction show the smallest decay and the largest conductance and current. Due to the high spin coherence in Si, Si nanowires represent an interesting platform for spin devices. Therefore, we built a magnetic tunneling junction by connecting a (110) Si nanowire to ferromagnetic Fe electrodes. We have find a substantial low bias magnetoresistance of

Monitoring of Vital Signs with Flexible and Wearable Medical Devices.

Science.gov (United States)

Khan, Yasser; Ostfeld, Aminy E; Lochner, Claire M; Pierre, Adrien; Arias, Ana C

2016-06-01

Advances in wireless technologies, low-power electronics, the internet of things, and in the domain of connected health are driving innovations in wearable medical devices at a tremendous pace. Wearable sensor systems composed of flexible and stretchable materials have the potential to better interface to the human skin, whereas silicon-based electronics are extremely efficient in sensor data processing and transmission. Therefore, flexible and stretchable sensors combined with low-power silicon-based electronics are a viable and efficient approach for medical monitoring. Flexible medical devices designed for monitoring human vital signs, such as body temperature, heart rate, respiration rate, blood pressure, pulse oxygenation, and blood glucose have applications in both fitness monitoring and medical diagnostics. As a review of the latest development in flexible and wearable human vitals sensors, the essential components required for vitals sensors are outlined and discussed here, including the reported sensor systems, sensing mechanisms, sensor fabrication, power, and data processing requirements. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhancement in the photodetection of ZnO nanowires by introducing surface-roughness-induced traps

International Nuclear Information System (INIS)

Park, Woojin; Jo, Gunho; Hong, Woong-Ki; Yoon, Jongwon; Choe, Minhyeok; Ji, Yongsung; Kim, Geunjin; Kahng, Yung Ho; Lee, Kwanghee; Lee, Takhee; Lee, Sangchul; Wang, Deli

2011-01-01

We investigated the enhanced photoresponse of ZnO nanowire transistors that was introduced with surface-roughness-induced traps by a simple chemical treatment with isopropyl alcohol (IPA). The enhanced photoresponse of IPA-treated ZnO nanowire devices is attributed to an increase in adsorbed oxygen on IPA-induced surface traps. The results of this study revealed that IPA-treated ZnO nanowire devices displayed higher photocurrent gains and faster photoswitching speed than transistors containing unmodified ZnO nanowires. Thus, chemical treatment with IPA can be a useful method for improving the photoresponse of ZnO nanowire devices.

Enhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy

KAUST Repository

Khan, Jafar Iqbal; Adhikari, Aniruddha; Sun, Jingya; Priante, Davide; Bose, Riya; Shaheen, Basamat; Ng, Tien Khee; Zhao, Chao; Bakr, Osman; Ooi, Boon S.; Mohammed, Omar F.

2016-01-01

Managing trap states and understanding their role in ultrafast charge-carrier dynamics, particularly at surface and interfaces, remains a major bottleneck preventing further advancements and commercial exploitation of nanowire (NW)-based devices. A

Low-cost rapid prototyping of flexible plastic paper based microfluidic devices

KAUST Repository

Fan, Yiqiang

2013-04-01

This research presents a novel rapid prototyping method for paper-based flexible microfluidic devices. The microchannels were fabricated using laser ablation on a piece of plastic paper (permanent paper), the dimensions of the microchannels was carefully studied for various laser powers and scanning speeds. After laser ablation of the microchannels on the plastic paper, a transparent poly (methyl methacrylate)(PMMA) film was thermally bonded to the plastic paper to enclose the channels. After connection of tubing, the device was ready to use. An example microfluidic device (droplet generator) was also fabricated using this technique. Due to the flexibility of the fabricated device, this technique can be used to fabricate 3D microfluidic devices. The fabrication process was simple and rapid without any requirement of cleanroom facilities. © 2013 IEEE.

Atomic-Resolution Spectrum Imaging of Semiconductor Nanowires.

Science.gov (United States)

Zamani, Reza R; Hage, Fredrik S; Lehmann, Sebastian; Ramasse, Quentin M; Dick, Kimberly A

2018-03-14

Over the past decade, III-V heterostructure nanowires have attracted a surge of attention for their application in novel semiconductor devices such as tunneling field-effect transistors (TFETs). The functionality of such devices critically depends on the specific atomic arrangement at the semiconductor heterointerfaces. However, most of the currently available characterization techniques lack sufficient spatial resolution to provide local information on the atomic structure and composition of these interfaces. Atomic-resolution spectrum imaging by means of electron energy-loss spectroscopy (EELS) in the scanning transmission electron microscope (STEM) is a powerful technique with the potential to resolve structure and chemical composition with sub-angstrom spatial resolution and to provide localized information about the physical properties of the material at the atomic scale. Here, we demonstrate the use of atomic-resolution EELS to understand the interface atomic arrangement in three-dimensional heterostructures in semiconductor nanowires. We observed that the radial interfaces of GaSb-InAs heterostructure nanowires are atomically abrupt, while the axial interface in contrast consists of an interfacial region where intermixing of the two compounds occurs over an extended spatial region. The local atomic configuration affects the band alignment at the interface and, hence, the charge transport properties of devices such as GaSb-InAs nanowire TFETs. STEM-EELS thus represents a very promising technique for understanding nanowire physical properties, such as differing electrical behavior across the radial and axial heterointerfaces of GaSb-InAs nanowires for TFET applications.

Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

OpenAIRE

Zahra Ostadmahmoodi Do; Tahereh Fanaei Sheikholeslami; Hassan Azarkish

2016-01-01

Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method fo...

Printable Transparent Conductive Films for Flexible Electronics.

Science.gov (United States)

Li, Dongdong; Lai, Wen-Yong; Zhang, Yi-Zhou; Huang, Wei

2018-03-01

Printed electronics are an important enabling technology for the development of low-cost, large-area, and flexible optoelectronic devices. Transparent conductive films (TCFs) made from solution-processable transparent conductive materials, such as metal nanoparticles/nanowires, carbon nanotubes, graphene, and conductive polymers, can simultaneously exhibit high mechanical flexibility, low cost, and better photoelectric properties compared to the commonly used sputtered indium-tin-oxide-based TCFs, and are thus receiving great attention. This Review summarizes recent advances of large-area flexible TCFs enabled by several roll-to-roll-compatible printed techniques including inkjet printing, screen printing, offset printing, and gravure printing using the emerging transparent conductive materials. The preparation of TCFs including ink formulation, substrate treatment, patterning, and postprocessing, and their potential applications in solar cells, organic light-emitting diodes, and touch panels are discussed in detail. The rational combination of a variety of printed techniques with emerging transparent conductive materials is believed to extend the opportunities for the development of printed electronics within the realm of flexible electronics and beyond. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

WO{sub 3-x} rate at Au rate at MnO{sub 2} core-shell nanowires on carbon fabric for high-performance flexible supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Lu, Xihong; Zhai, Teng [Wuhan National Laboratory for Optoelectronics (WNLO), College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan (China); School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou (China); Zhang, Xianghui; Shen, Yongqi; Yuan, Longyan; Hu, Bin; Gao, Yihua; Zhou, Jun [Wuhan National Laboratory for Optoelectronics (WNLO), College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan (China); Gong, Li; Chen, Jian [Instrumental Analysis and Research Center, Sun Yat-sen University, Guangzhou (China); Tong, Yexiang [School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou (China); Wang, Zhong Lin [Wuhan National Laboratory for Optoelectronics (WNLO), College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan (China); School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia (United States)

2012-02-14

WO{sub 3-x} rate at Au rate at MnO{sub 2} core-shell nanowires (NWs) are synthesized on a flexible carbon fabric and show outstanding electrochemical performance in supercapacitors such as high specific capacitance, good cyclic stability, high energy density, and high power density. These results suggest that the WO{sub 3-x} rate at Au rate at MnO{sub 2} NWs have promising potential for use in high-performance flexible supercapacitors. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Ag-catalyzed InAs nanowires grown on transferable graphite flakes

DEFF Research Database (Denmark)

Meyer-Holdt, Jakob; Kanne, Thomas; Sestoft, Joachim E.

2016-01-01

on exfoliated graphite flakes by molecular beam epitaxy. Ag catalyzes the InAs nanowire growth selectively on the graphite flakes and not on the underlying InAs substrates. This allows for easy transfer of the flexible graphite flakes with as-grown nanowire ensembles to arbitrary substrates by a micro...

Aging of Organic Nanowires

DEFF Research Database (Denmark)

Balzer, Frank; Schiek, Manuela; Osadnik, Andreas

2012-01-01

Organic semiconductors formed by epitaxial growth from small molecules such as the para-phenylenes or squaraines promise a vast application potential as the active ingredient in electric and optoelectronic devices. Their self-organization into organic nanowires or "nanofibers" adds a peculiar...... attribute, making them especially interesting for light generation in OLEDs and for light-harvesting devices such as solar cells. Functionalization of the molecules allows the customization of optical and electrical properties. However, aging of the wires might lead to a considerable decrease in device...... performance over time. In this study the morphological stability of organic nanoclusters and nanowires from the methoxy functionalized quaterphenylene, 4,4'''dimethoxy-1,1':4',1''4'',1'''-quaterphenylene (MOP4), is investigated in detail. Aging experiments conducted by atomic force microscopy under ambient...

Flexible heartbeat sensor for wearable device.

Science.gov (United States)

Kwak, Yeon Hwa; Kim, Wonhyo; Park, Kwang Bum; Kim, Kunnyun; Seo, Sungkyu

2017-08-15

We demonstrate a flexible strain-gauge sensor and its use in a wearable application for heart rate detection. This polymer-based strain-gauge sensor was fabricated using a double-sided fabrication method with polymer and metal, i.e., polyimide and nickel-chrome. The fabrication process for this strain-gauge sensor is compatible with the conventional flexible printed circuit board (FPCB) processes facilitating its commercialization. The fabricated sensor showed a linear relation for an applied normal force of more than 930 kPa, with a minimum detectable force of 6.25Pa. This sensor can also linearly detect a bending radius from 5mm to 100mm. It is a thin, flexible, compact, and inexpensive (for mass production) heart rate detection sensor that is highly sensitive compared to the established optical photoplethysmography (PPG) sensors. It can detect not only the timing of heart pulsation, but also the amplitude or shape of the pulse signal. The proposed strain-gauge sensor can be applicable to various applications for smart devices requiring heartbeat detection. Copyright © 2017 Elsevier B.V. All rights reserved.

Nano-soldering of magnetically aligned three-dimensional nanowire networks

International Nuclear Information System (INIS)

Gao Fan; Gu Zhiyong

2010-01-01

It is extremely challenging to fabricate 3D integrated nanostructures and hybrid nanoelectronic devices. In this paper, we report a simple and efficient method to simultaneously assemble and solder nanowires into ordered 3D and electrically conductive nanowire networks. Nano-solders such as tin were fabricated onto both ends of multi-segmented nanowires by a template-assisted electrodeposition method. These nanowires were then self-assembled and soldered into large-scale 3D network structures by magnetic field assisted assembly in a liquid medium with a high boiling point. The formation of junctions/interconnects between the nanowires and the scale of the assembly were dependent on the solder reflow temperature and the strength of the magnetic field. The size of the assembled nanowire networks ranged from tens of microns to millimeters. The electrical characteristics of the 3D nanowire networks were measured by regular current-voltage (I-V) measurements using a probe station with micropositioners. Nano-solders, when combined with assembling techniques, can be used to efficiently connect and join nanowires with low contact resistance, which are very well suited for sensor integration as well as nanoelectronic device fabrication.

Characterization of III-V nanowires for photovoltaic devices using advanced electron microscopy techniques

DEFF Research Database (Denmark)

Persson, Johan Mikael

In this work, the crystal structure of epitaxially grown semiconductor nanowires has been analysed using electron microscopy and to some extent X-ray diffractometry. The goal of the EU project which this work was a part of was to build multi-junction solar cells with nanowires as the main building...... of the crystal structure at the junction. This thesis also comments on some unusual properties and _ndings of the examined nanowires: Some nanowires sported a droplet-like protrusion of the catalyst gold particle reaching into the solid center of the nanowire. This feature can be discussed in terms of nanowire...

Nanowire Electrodes for Advanced Lithium Batteries

Energy Technology Data Exchange (ETDEWEB)

Huang, Lei; Wei, Qiulong; Sun, Ruimin; Mai, Liqiang, E-mail: mlq518@whut.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, WUT-Harvard Joint Nano Key Laboratory, Wuhan University of Technology, Wuhan (China)

2014-10-27

Since the commercialization of lithium ion batteries (LIBs) in the past two decades, rechargeable LIBs have become widespread power sources for portable devices used in daily life. However, current demands require higher energy density and power density of batteries. The electrochemical energy storage performance of LIBs could be improved by applying nanomaterial electrodes, but their fast capacity fading is still one of the key limitations and the mechanism need to be clearly understood. Single nanowire electrode devices are considered as a versatile platform for in situ probing the direct relationship between electrical transport, structure change, and other properties of the single nanowire electrode along with the charge/discharge process. The results indicate that the conductivity decrease of the nanowire electrode and the structural disorder/destruction during electrochemical reaction limit the cycling performance of LIBs. Based on the in situ observations, some feasible optimization strategies, including prelithiation, coaxial structure, nanowire arrays, and hierarchical structure architecture, are proposed and utilized to restrain the conductivity decrease and structural disorder/destruction. Further, the applications of nanowire electrodes in some “beyond Li-ion” batteries, such as Li-S and Li-air batteries are also described.

Nanowire Electrodes for Advanced Lithium Batteries

Directory of Open Access Journals (Sweden)

Lei eHuang

2014-10-01

Full Text Available Since the commercialization of lithium ion batteries (LIBs in the past two decades, rechargeable LIBs have become widespread power sources for portable devices used in daily life. However, current demands require higher energy density and power density of batteries. The electrochemical energy storage performance of LIBs could be improved by applying nanomaterial electrodes, but their fast capacity fading is still one of the key limitations and the mechanism needs to be clearly understood. Single nanowire electrode devices are considered as a versatile platform for in situ probing the direct relationship between electrical transport, structure change, and other properties of the single nanowire electrode along with the charge/discharge process. The results indicate the conductivity decrease of the nanowire electrode and the structural disorder/destruction during electrochemical reactions which limit the cycling performance of LIBs. Based on the in situ observations, some feasible structure architecture strategies, including prelithiation, coaxial structure, nanowire arrays and hierarchical structure architecture, are proposed and utilized to restrain the conductivity decrease and structural disorder/destruction. Further, the applications of nanowire electrodes in some beyond Li-ion batteries, such as Li-S and Li-air battery, are also described.

Nanowire Electrodes for Advanced Lithium Batteries

International Nuclear Information System (INIS)

Huang, Lei; Wei, Qiulong; Sun, Ruimin; Mai, Liqiang

2014-01-01

Since the commercialization of lithium ion batteries (LIBs) in the past two decades, rechargeable LIBs have become widespread power sources for portable devices used in daily life. However, current demands require higher energy density and power density of batteries. The electrochemical energy storage performance of LIBs could be improved by applying nanomaterial electrodes, but their fast capacity fading is still one of the key limitations and the mechanism need to be clearly understood. Single nanowire electrode devices are considered as a versatile platform for in situ probing the direct relationship between electrical transport, structure change, and other properties of the single nanowire electrode along with the charge/discharge process. The results indicate that the conductivity decrease of the nanowire electrode and the structural disorder/destruction during electrochemical reaction limit the cycling performance of LIBs. Based on the in situ observations, some feasible optimization strategies, including prelithiation, coaxial structure, nanowire arrays, and hierarchical structure architecture, are proposed and utilized to restrain the conductivity decrease and structural disorder/destruction. Further, the applications of nanowire electrodes in some “beyond Li-ion” batteries, such as Li-S and Li-air batteries are also described.

Flexible piezotronic strain sensor.

Science.gov (United States)

Zhou, Jun; Gu, Yudong; Fei, Peng; Mai, Wenjie; Gao, Yifan; Yang, Rusen; Bao, Gang; Wang, Zhong Lin

2008-09-01

Strain sensors based on individual ZnO piezoelectric fine-wires (PFWs; nanowires, microwires) have been fabricated by a simple, reliable, and cost-effective technique. The electromechanical sensor device consists of a single electrically connected PFW that is placed on the outer surface of a flexible polystyrene (PS) substrate and bonded at its two ends. The entire device is fully packaged by a polydimethylsiloxane (PDMS) thin layer. The PFW has Schottky contacts at its two ends but with distinctly different barrier heights. The I- V characteristic is highly sensitive to strain mainly due to the change in Schottky barrier height (SBH), which scales linear with strain. The change in SBH is suggested owing to the strain induced band structure change and piezoelectric effect. The experimental data can be well-described by the thermionic emission-diffusion model. A gauge factor of as high as 1250 has been demonstrated, which is 25% higher than the best gauge factor demonstrated for carbon nanotubes. The strain sensor developed here has applications in strain and stress measurements in cell biology, biomedical sciences, MEMS devices, structure monitoring, and more.

Optical haze of randomly arranged silver nanowire transparent conductive films with wide range of nanowire diameters

Directory of Open Access Journals (Sweden)

M. Marus

2018-03-01

Full Text Available The effect of the diameter of randomly arranged silver nanowires on the optical haze of silver nanowire transparent conductive films was studied. Proposed simulation model behaved similarly with the experimental results, and was used to theoretically study the optical haze of silver nanowires with diameters in the broad range from 30 nm and above. Our results show that a thickening of silver nanowires from 30 to 100 nm results in the increase of the optical haze up to 8 times, while from 100 to 500 nm the optical haze increases only up to 1.38. Moreover, silver nanowires with diameter of 500 nm possess up to 5% lower optical haze and 5% higher transmittance than 100 nm thick silver nanowires for the same 10-100 Ohm/sq sheet resistance range. Further thickening of AgNWs can match the low haze of 30 nm thick AgNWs, but at higher transmittance. The results obtained from this work allow deeper analysis of the silver nanowire transparent conductive films from the perspective of the diameter of nanowires for various optoelectronic devices.

Silicon Nanowire/Polymer Hybrid Solar Cell-Supercapacitor: A Self-Charging Power Unit with a Total Efficiency of 10.5.

Science.gov (United States)

Liu, Ruiyuan; Wang, Jie; Sun, Teng; Wang, Mingjun; Wu, Changsheng; Zou, Haiyang; Song, Tao; Zhang, Xiaohong; Lee, Shuit-Tong; Wang, Zhong Lin; Sun, Baoquan

2017-07-12

An integrated self-charging power unit, combining a hybrid silicon nanowire/polymer heterojunction solar cell with a polypyrrole-based supercapacitor, has been demonstrated to simultaneously harvest solar energy and store it. By efficiency enhancement of the hybrid nanowire solar cells and a dual-functional titanium film serving as conjunct electrode of the solar cell and supercapacitor, the integrated system is able to yield a total photoelectric conversion to storage efficiency of 10.5%, which is the record value in all the integrated solar energy conversion and storage system. This system may not only serve as a buffer that diminishes the solar power fluctuations from light intensity, but also pave its way toward cost-effective high efficiency self-charging power unit. Finally, an integrated device based on ultrathin Si substrate is demonstrated to expand its feasibility and potential application in flexible energy conversion and storage devices.

Aluminum-catalyzed silicon nanowires: Growth methods, properties, and applications

Energy Technology Data Exchange (ETDEWEB)

Hainey, Mel F.; Redwing, Joan M. [Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2016-12-15

Metal-mediated vapor-liquid-solid (VLS) growth is a promising approach for the fabrication of silicon nanowires, although residual metal incorporation into the nanowires during growth can adversely impact electronic properties particularly when metals such as gold and copper are utilized. Aluminum, which acts as a shallow acceptor in silicon, is therefore of significant interest for the growth of p-type silicon nanowires but has presented challenges due to its propensity for oxidation. This paper summarizes the key aspects of aluminum-catalyzed nanowire growth along with wire properties and device results. In the first section, aluminum-catalyzed nanowire growth is discussed with a specific emphasis on methods to mitigate aluminum oxide formation. Next, the influence of growth parameters such as growth temperature, precursor partial pressure, and hydrogen partial pressure on nanowire morphology is discussed, followed by a brief review of the growth of templated and patterned arrays of nanowires. Aluminum incorporation into the nanowires is then discussed in detail, including measurements of the aluminum concentration within wires using atom probe tomography and assessment of electrical properties by four point resistance measurements. Finally, the use of aluminum-catalyzed VLS growth for device fabrication is reviewed including results on single-wire radial p-n junction solar cells and planar solar cells fabricated with nanowire/nanopyramid texturing.

Optical and field emission properties of layer-structure GaN nanowires

Energy Technology Data Exchange (ETDEWEB)

Cui, Zhen [Science School, Xi’an University of Technology, Xi’an 710048 (China); School of automation and Information Engineering, Xi’an University of Technology, Xi’an 710048 (China); Li, Enling, E-mail: Lienling@xaut.edu.cn [Science School, Xi’an University of Technology, Xi’an 710048 (China); Shi, Wei; Ma, Deming [Science School, Xi’an University of Technology, Xi’an 710048 (China)

2014-08-15

Highlights: • The layer-structure GaN nanowires with hexagonal-shaped cross-sections are produced via a process based on the CVD method. • The diameter of the layer-structure GaN nanowire gradually decreases from ∼500 nm to ∼200 nm along the wire axis. • The layer-structure GaN nanowire film possesses good field emission property. - Abstract: A layer-structure gallium nitride (GaN) nanowires, grown on Pt-coated n-type Si (1 1 1) substrate, have been synthesized using chemical vapor deposition (CVD). The results show: (1) SEM indicates that the geometry structure is layer-structure. HRTEM indicates that GaN nanowire’s preferential growth direction is along [0 0 1] direction. (2) The room temperature PL emission spectrum of the layer-structure GaN nanowires has a peak at 375 nm, which proves that GaN nanowires have potential application in light-emitting nano-devices. (3) Field-emission measurements show that the layer-structure GaN nanowires film has a low turn-on field of 4.39 V/μm (at room temperature), which is sufficient for electron emission devices, field emission displays and vacuum nano-electronic devices. The growth mechanism for GaN nanowires has also been discussed briefly.

Selective growth of gallium nitride nanowires by femtosecond laser patterning

International Nuclear Information System (INIS)

Ng, D.K.T.; Hong, M.H.; Tan, L.S.; Zhou, Y.; Chen, G.X.

2008-01-01

We report on gallium nitride (GaN) nanowires grown using pulsed laser ablation, adopting the vapor-liquid-solid (VLS) growth mechanism. The GaN nanowires are obtained based on the principle that a catalyst is required to initiate the nanowires growth. Locations of the GaN nanowires are patterned using femtosecond laser and focused ion beam. Scanning electron microscopy (SEM) is used to characterize the nanowires. This patterning of GaN nanowires will enable selective growth of nanowires and bottom-up assembly of integrated electronic and photonic devices

Selective growth of gallium nitride nanowires by femtosecond laser patterning

Energy Technology Data Exchange (ETDEWEB)

Ng, D.K.T. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Data Storage Institute, Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore); Hong, M.H. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Data Storage Institute, Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore)], E-mail: HONG_Minghui@dsi.a-star.edu.sg; Tan, L.S. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Zhou, Y. [Data Storage Institute, Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore); Department of Mechanical Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Chen, G.X. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)

2008-01-31

We report on gallium nitride (GaN) nanowires grown using pulsed laser ablation, adopting the vapor-liquid-solid (VLS) growth mechanism. The GaN nanowires are obtained based on the principle that a catalyst is required to initiate the nanowires growth. Locations of the GaN nanowires are patterned using femtosecond laser and focused ion beam. Scanning electron microscopy (SEM) is used to characterize the nanowires. This patterning of GaN nanowires will enable selective growth of nanowires and bottom-up assembly of integrated electronic and photonic devices.

High performance flexible metal oxide/silver nanowire based transparent conductive films by a scalable lamination-assisted solution method

Directory of Open Access Journals (Sweden)

Hua Yu

2017-03-01

Full Text Available Flexible MoO3/silver nanowire (AgNW/MoO3/TiO2/Epoxy electrodes with comparable performance to ITO were fabricated by a scalable solution-processed method with lamination assistance for transparent and conductive applications. Silver nanoparticle-based electrodes were also prepared for comparison. Using a simple spin-coating and lamination-assisted planarization method, a full solution-based approach allows preparation of AgNW-based composite electrodes at temperatures as low as 140 °C. The resulting flexible AgNW-based electrodes exhibit higher transmittance of 82% at 550 nm and lower sheet resistance about 12–15 Ω sq−1, in comparison with the values of 68% and 22–25 Ω sq−1 separately for AgNP based electrodes. Scanning electron microscopy (SEM and Atomic force microscopy (AFM reveals that the multi-stacked metal-oxide layers embedded with the AgNWs possess lower surface roughness (<15 nm. The AgNW/MoO3 composite network could enhance the charge transport and collection efficiency by broadening the lateral conduction range due to the built of an efficient charge transport network with long-sized nanowire. In consideration of the manufacturing cost, the lamination-assisted solution-processed method is cost-effective and scalable, which is desire for large-area fabrication. While in view of the materials cost and comparable performance, this AgNW-based transparent and conductive electrodes is potential as an alternative to ITO for various optoelectronic applications.

Ultradense, Deep Subwavelength Nanowire Array Photovoltaics As Engineered Optical Thin Films

KAUST Repository

Tham, Douglas; Heath, James R.

2010-01-01

A photovoltaic device comprised of an array of 20 nm wide, 32 nm pitch array of silicon nanowires is modeled as an optical material. The nanowire array (NWA) has characteristic device features that are deep in the subwavelength regime for light

Vacuum Deposited Organic Light Emitting Devices on Flexible Substrates

National Research Council Canada - National Science Library

Forrest, Stephen

2002-01-01

The objective of this eight year program was to demonstrate both passive and active matrix, flexible, small scale displays based on small molecular weight organic light emitting device (OLED) technology...

Cold Isostatic-Pressured Silver Nanowire Electrodes for Flexible Organic Solar Cells via Room-Temperature Processes.

Science.gov (United States)

Seo, Ji Hoon; Hwang, Inchan; Um, Han-Don; Lee, Sojeong; Lee, Kangmin; Park, Jeonghwan; Shin, Hyeonoh; Kwon, Tae-Hyuk; Kang, Seok Ju; Seo, Kwanyong

2017-08-01

Transparent conducting electrodes (TCEs) are considered to be an essential structural component of flexible organic solar cells (FOSCs). Silver nanowire (AgNW) electrodes are widely used as TCEs owing to their excellent electrical and optical properties. The fabrication of AgNW electrodes has faced challenges in terms of forming large uniform interconnected networks so that high conductivity and reproducibility can be achieved. In this study, a simple method for creating an intimate contact between AgNWs that uses cold isostatic pressing (CIP) is demonstrated. This method increases the conductivity of the AgNW electrodes, which enables the fabrication of high-efficiency inverted FOSCs that have a power conversion efficiency of 8.75% on flexible polyethylene terephthalate with no short circuiting occurring as the CIP process minimizes the surface roughness of the AgNW electrode. This allows to achieve 100% manufacturing yield of FOSCs. Furthermore, these highly efficient FOSCs are proven to only be 2.4% less efficient even for an extreme bending radius of R ≈ 1.5 mm, compared with initial efficiency. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Site-Specific Growth and in Situ Integration of Different Nanowire Material Networks on a Single Chip: Toward a Nanowire-Based Electronic Nose for Gas Detection.

Science.gov (United States)

Hrachowina, Lukas; Domènech-Gil, Guillem; Pardo, Antonio; Seifner, Michael S; Gràcia, Isabel; Cané, Carles; Romano-Rodríguez, Albert; Barth, Sven

2018-03-23

A new method for the site-selective synthesis of nanowires has been developed to enable material growth with defined morphology and, at the same time, different composition on the same chip surface. The chemical vapor deposition approach for the growth of these nanowire-based resistive devices using micromembranes can be easily modified and represents a simple, adjustable fabrication process for the direct integration of nanowire meshes in multifunctional devices. This proof-of-concept study includes the deposition of SnO 2 , WO 3 , and Ge nanowires on the same chip. The individual resistors exhibit adequate gas sensing responses toward changing gas concentrations of CO, NO 2 , and humidity diluted in synthetic air. The data have been processed by principal component analysis with cluster responses that can be easily separated, and thus, the devices described herein are in principle suitable for environmental monitoring.

Single cell detection using a magnetic zigzag nanowire biosensor.

Science.gov (United States)

Huang, Hao-Ting; Ger, Tzong-Rong; Lin, Ya-Hui; Wei, Zung-Hang

2013-08-07

A magnetic zigzag nanowire device was designed for single cell biosensing. Nanowires with widths of 150, 300, 500, and 800 nm were fabricated on silicon trenches by electron beam lithography, electron beam evaporation, and lift-off processes. Magnetoresistance measurements were performed before and after the attachment of a single magnetic cell to the nanowires to characterize the magnetic signal change due to the influence of the magnetic cell. Magnetoresistance responses were measured in different magnetic field directions, and the results showed that this nanowire device can be used for multi-directional detection. It was observed that the highest switching field variation occurred in a 150 nm wide nanowire when the field was perpendicular to the substrate plane. On the other hand, the highest magnetoresistance ratio variation occurred in a 800 nm wide nanowire also when the field was perpendicular to the substrate plane. Besides, the trench-structured substrate proposed in this study can fix the magnetic cell to the sensor in a fluid environment, and the stray field generated by the corners of the magnetic zigzag nanowires has the function of actively attracting the magnetic cells for detection.

Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth

KAUST Repository

Shen, Youde; Chen, Renjie; Yu, Xuechao; Wang, Qijie; Jungjohann, Katherine L.; Dayeh, Shadi A.; Wu, Tao

2016-01-01

Epitaxy-enabled bottom-up synthesis of self-assembled planar nanowires via the vapor-liquid-solid mechanism is an emerging and promising approach toward large-scale direct integration of nanowire-based devices without postgrowth alignment. Here, by examining large assemblies of indium tin oxide nanowires on yttria-stabilized zirconia substrate, we demonstrate for the first time that the growth dynamics of planar nanowires follows a modified version of the Gibbs-Thomson mechanism, which has been known for the past decades to govern the correlations between thermodynamic supersaturation, growth speed, and nanowire morphology. Furthermore, the substrate orientation strongly influences the growth characteristics of epitaxial planar nanowires as opposed to impact at only the initial nucleation stage in the growth of vertical nanowires. The rich nanowire morphology can be described by a surface-energy-dependent growth model within the Gibbs-Thomson framework, which is further modulated by the tin doping concentration. Our experiments also reveal that the cutoff nanowire diameter depends on the substrate orientation and decreases with increasing tin doping concentration. These results enable a deeper understanding and control over the growth of planar nanowires, and the insights will help advance the fabrication of self-assembled nanowire devices. © 2016 American Chemical Society.

Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth

KAUST Repository

Shen, Youde

2016-06-02

Epitaxy-enabled bottom-up synthesis of self-assembled planar nanowires via the vapor-liquid-solid mechanism is an emerging and promising approach toward large-scale direct integration of nanowire-based devices without postgrowth alignment. Here, by examining large assemblies of indium tin oxide nanowires on yttria-stabilized zirconia substrate, we demonstrate for the first time that the growth dynamics of planar nanowires follows a modified version of the Gibbs-Thomson mechanism, which has been known for the past decades to govern the correlations between thermodynamic supersaturation, growth speed, and nanowire morphology. Furthermore, the substrate orientation strongly influences the growth characteristics of epitaxial planar nanowires as opposed to impact at only the initial nucleation stage in the growth of vertical nanowires. The rich nanowire morphology can be described by a surface-energy-dependent growth model within the Gibbs-Thomson framework, which is further modulated by the tin doping concentration. Our experiments also reveal that the cutoff nanowire diameter depends on the substrate orientation and decreases with increasing tin doping concentration. These results enable a deeper understanding and control over the growth of planar nanowires, and the insights will help advance the fabrication of self-assembled nanowire devices. © 2016 American Chemical Society.

Growth Mechanism of Nanowires: Ternary Chalcogenides

Science.gov (United States)

Singh, N. B.; Coriell, S. R.; Hopkins, R. H.; Su, Ching Hua; Arnold, B.; Choa, Fow-Sen; Cullum, Brian

2016-01-01

In the past two decades there has been a large rise in the investment and expectations for nanotechnology use. Almost every area of research has projected improvements in sensors, or even a promise for the emergence of some novel device technologies. For these applications major focuses of research are in the areas of nanoparticles and graphene. Although there are some near term applications with nanowires in photodetectors and other low light detectors, there are few papers on the growth mechanism and fabrication of nanowire-based devices. Semiconductor nanowires exhibit very favorable and promising optical properties, including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here an overview of the mechanism of nanowire growth from the melt, and some preliminary results for the thallium arsenic selenide material system. Thallium arsenic selenide (TAS) is a multifunctional material combining excellent acousto-optical, nonlinear and radiation detection properties. We observed that small units of (TAS) nanocubes arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. In some cases very long wires (less than mm) are formed. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places.

Design and Characterisation of III-V Semiconductor Nanowire Lasers

Science.gov (United States)

Saxena, Dhruv

The development of small, power-efficient lasers underpins many of the technologies that we utilise today. Semiconductor nanowires are promising for miniaturising lasers to even smaller dimensions. III-V semiconductors, such as Gallium Arsenide (GaAs) and Indium Phosphide (InP), are the most widely used materials for optoelectronic devices and so the development of nanowire lasers based on these materials is expected to have technologically significant outcomes. This PhD dissertation presents a comprehensive study of the design of III-V semiconductor nanowire lasers, with bulk and quantum confined active regions. Based on the design, various III-V semiconductor nanowire lasers are demonstrated, namely, GaAs nanowire lasers, GaAs/AlGaAs multi-quantum well (MQW) nanowire lasers and InP nanowire lasers. These nanowire lasers are shown to operate at room temperature, have low thresholds, and lase from different transverse modes. The structural and optoelectronic quality of nanowire lasers are characterised via electron microscopy and photoluminescence spectroscopic techniques. Lasing is characterised in all these devices by optical pumping. The lasing characteristics are analysed by rate equation modelling and the lasing mode(s) in these devices is characterised by threshold gain modelling, polarisation measurements and Fourier plane imaging. Firstly, GaAs nanowire lasers that operate at room temperature are demonstrated. This is achieved by determining the optimal nanowire diameter to reduce threshold gain and by passivating nanowires to improve their quantum efficiency (QE). High-quality surface passivated GaAs nanowires of suitable diameters are grown. The growth procedure is tailored to improve both QE and structural uniformity of nanowires. Room-temperature lasing is demonstrated from individual nanowires and lasing is characterised to be from TM01 mode by threshold gain modelling. To lower threshold even further, nanowire lasers with GaAs/AlGaAs coaxial multi

Large area, low capacitance, GaAs nanowire photodetector with a transparent Schottky collecting junction

International Nuclear Information System (INIS)

Seyedi, M. A.; Yao, M.; O'Brien, J.; Dapkus, P. D.; Wang, S. Y.

2013-01-01

We present experimental results on a GaAs/Indium-Tin-Oxide Schottky-like heterojunction photodetector based on a nanowire device geometry. By distributing the active detecting area over an array of nanowires, it is possible to achieve large area detection with low capacitance. Devices with bare GaAs and passivated AlGaAs/GaAs nanowires are fabricated to compare the responsivity with and without surface passivation. We are able to achieve responsivity of >0.5A/W and Signal-Noise-Ratio in excess of 7 dB for 2 V applied reverse bias with passivated nanowire devices. Capacitance-voltage measurement yields 2 , which shows a strong possibility for high-speed applications with a broad area device

A Flexible Microcontroller-Based Data Acquisition Device

Directory of Open Access Journals (Sweden)

Darko Hercog

2014-06-01

Full Text Available This paper presents a low-cost microcontroller-based data acquisition device. The key component of the presented solution is a configurable microcontroller-based device with an integrated USB transceiver and a 12-bit analogue-to-digital converter (ADC. The presented embedded DAQ device contains a preloaded program (firmware that enables easy acquisition and generation of analogue and digital signals and data transfer between the device and the application running on a PC via USB bus. This device has been developed as a USB human interface device (HID. This USB class is natively supported by most of the operating systems and therefore any installation of additional USB drivers is unnecessary. The input/output peripheral of the presented device is not static but rather flexible, and could be easily configured to customised needs without changing the firmware. When using the developed configuration utility, a majority of chip pins can be configured as analogue input, digital input/output, PWM output or one of the SPI lines. In addition, LabVIEW drivers have been developed for this device. When using the developed drivers, data acquisition and signal processing algorithms as well as graphical user interface (GUI, can easily be developed using a well-known, industry proven, block oriented LabVIEW programming environment.

A flexible microcontroller-based data acquisition device.

Science.gov (United States)

Hercog, Darko; Gergič, Bojan

2014-06-02

This paper presents a low-cost microcontroller-based data acquisition device. The key component of the presented solution is a configurable microcontroller-based device with an integrated USB transceiver and a 12-bit analogue-to-digital converter (ADC). The presented embedded DAQ device contains a preloaded program (firmware) that enables easy acquisition and generation of analogue and digital signals and data transfer between the device and the application running on a PC via USB bus. This device has been developed as a USB human interface device (HID). This USB class is natively supported by most of the operating systems and therefore any installation of additional USB drivers is unnecessary. The input/output peripheral of the presented device is not static but rather flexible, and could be easily configured to customised needs without changing the firmware. When using the developed configuration utility, a majority of chip pins can be configured as analogue input, digital input/output, PWM output or one of the SPI lines. In addition, LabVIEW drivers have been developed for this device. When using the developed drivers, data acquisition and signal processing algorithms as well as graphical user interface (GUI), can easily be developed using a well-known, industry proven, block oriented LabVIEW programming environment.

Low-cost high-quality crystalline germanium based flexible devices

KAUST Repository

Nassar, Joanna M.

2014-06-16

High performance flexible electronics promise innovative future technology for various interactive applications for the pursuit of low-cost, light-weight, and multi-functional devices. Thus, here we show a complementary metal oxide semiconductor (CMOS) compatible fabrication of flexible metal-oxide-semiconductor capacitors (MOSCAPs) with high-κ/metal gate stack, using a physical vapor deposition (PVD) cost-effective technique to obtain a high-quality Ge channel. We report outstanding bending radius ~1.25 mm and semi-transparency of 30%.

Low-cost high-quality crystalline germanium based flexible devices

KAUST Repository

Nassar, Joanna M.; Hussain, Aftab M.; Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

2014-01-01

High performance flexible electronics promise innovative future technology for various interactive applications for the pursuit of low-cost, light-weight, and multi-functional devices. Thus, here we show a complementary metal oxide semiconductor (CMOS) compatible fabrication of flexible metal-oxide-semiconductor capacitors (MOSCAPs) with high-κ/metal gate stack, using a physical vapor deposition (PVD) cost-effective technique to obtain a high-quality Ge channel. We report outstanding bending radius ~1.25 mm and semi-transparency of 30%.

Hydrothermal growth of titania nanowires for SAW device sensing area

Directory of Open Access Journals (Sweden)

Zakaria Mohd Rosydi

2017-01-01

Full Text Available Synthesis of titania or titanium dioxide (TiO2 is attracted to energy and environmental applications. Here, the growth of nanostructure TiO2 nanowires on Si (100 substrates by using the two-step method. Different seed layers of TiO2 were deposited by spin coating and annealing, followed by the growth of TiO2 nanowires by using the hydrothermal method. The sol-gel technique was used in preparing the TiO2 solution for the thin film deposition purpose. Acetic acid, hydrochloric acid and tris (2-aminoethyl amine were used as a stabilizer to synthesize three different TiO2 seed layers. The aim of this study was to understand the role of polycrystalline size on thin film towards the diameter of nanowires grown as a sensing area in Surface Acoustic Wave (SAW Biosensor. The morphology and structure of the thin film and TiO2 nanowires were characterized using X-Ray diffraction (XRD, scanning electron microscope (SEM, field emission scanning electron microscope (FESEM and atomic force microscopy (AFM.

High-temperature superconducting nanowires for photon detection

Energy Technology Data Exchange (ETDEWEB)

Arpaia, R. [Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, S-41296 Göteborg (Sweden); CNR SPIN Institute – Superconductors, Innovative Materials and Devices, UOS–Napoli, I-80100 Napoli (Italy); Dipartimento di Fisica, Università degli Studi di Napoli ‘Federico II’, I-80125 Napoli (Italy); Ejrnaes, M. [CNR SPIN Institute – Superconductors, Innovative Materials and Devices, UOS–Napoli, I-80100 Napoli (Italy); Parlato, L. [CNR SPIN Institute – Superconductors, Innovative Materials and Devices, UOS–Napoli, I-80100 Napoli (Italy); Dipartimento di Fisica, Università degli Studi di Napoli ‘Federico II’, I-80125 Napoli (Italy); Tafuri, F. [CNR SPIN Institute – Superconductors, Innovative Materials and Devices, UOS–Napoli, I-80100 Napoli (Italy); Dipartimento di Ingegneria Industriale e dell’Informazione, Seconda Università di Napoli, I-81031 Aversa, CE (Italy); Cristiano, R. [CNR SPIN Institute – Superconductors, Innovative Materials and Devices, UOS–Napoli, I-80100 Napoli (Italy); Golubev, D. [Low Temperature Laboratory (OVLL), Aalto University School of Science, P.O. Box 13500, FI-00076 Aalto (Finland); Sobolewski, Roman, E-mail: roman.sobolewski@rochester.edu [Institute of Electron Technology, PL-02668 Warszawa (Poland); Department of Electrical and Computer Engineering and Laboratory for Laser Energetics, University of Rochester, NY 14627-0231 (United States); Bauch, T.; Lombardi, F. [Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, S-41296 Göteborg (Sweden); and others

2015-02-15

Highlights: • Homogeneous YBCO nanowires have been fabricated for photon detection applications. • Serial-parallel nanowire configuration leads to a large detector active area. • The YBCO nanowires exhibit critical current densities up to 106 A/cm{sup 2}. • The devices have been excited using a 1550-nm wavelength, pulsed laser irradiation. • Photoresponse signals have been measured and analyzed from 4 K up to the device T{sub c}. - Abstract: The possible use of high-temperature superconductors (HTS) for realizing superconducting nanowire single-photon detectors is a challenging, but also promising, aim because of their ultrafast electron relaxation times and high operating temperatures. The state-of-the-art HTS nanowires with a 50-nm thickness and widths down to 130 nm have been fabricated and tested under a 1550-nm wavelength laser irradiation. Experimental results presenting both the amplitude and rise times of the photoresponse signals as a function of the normalized detector bias current, measured in a wide temperature range, are discussed. The presence of two distinct regimes in the photoresponse temperature dependence is clearly evidenced, indicating that there are two different response mechanisms responsible for the HTS photoresponse mechanisms.

In situ hydrogenation of molybdenum oxide nanowires for enhanced supercapacitors

KAUST Repository

Shakir, Imran

2014-01-01

In situ hydrogenation of orthorhombic molybdenum trioxide (α-MoO 3) nanowires has been achieved on a large scale by introducing alcohol during the hydrothermal synthesis for electrochemical energy storage supercapacitor devices. The hydrogenated molybdenum trioxide (H xMoO3) nanowires yield a specific capacitance of 168 F g-1 at 0.5 A g-1 and maintain 108 F g-1 at 10 A g-1, which is 36-fold higher than the capacitance obtained from pristine MoO3 nanowires at the same conditions. The electrochemical devices made with HxMoO3 nanowires exhibit excellent cycling stability by retaining 97% of their capacitance after 3000 cycles due to an enhanced electronic conductivity and increased density of hydroxyl groups on the surface of the MoO3 nanowires. This journal is © The Royal Society of Chemistry.

Growth and characterisation of group-III nitride-based nanowires for devices

Energy Technology Data Exchange (ETDEWEB)

Meijers, R J

2007-08-30

One of the main goals of this thesis was to get more insight into the mechanisms driving the growth of nitride nanowires by plasma-assisted molecular beam epitaxy (PA-MBE). The influence of the group-III and group-V flux as well as the substrate temperature T{sub sub} has been studied leading to the conclusion that the III-V ratio determines the growth mode. Ga desorption limits the temperature range to grow GaN nanowires and dissociation of InN is the limiting factor for InN nanowire growth. A reduction of the surface diffusivity on polar surfaces under N-rich conditions explains the anisotropic growth. Growth kinetics of the nanowires show that there are two important contributions to the growth. The first is growth by direct impingement and its contribution is independent of the nanowire diameter. The second contribution comes from atoms, which absorb on the substrate or wire sidewalls and diffuse along the sidewalls to the top of the wire, which acts as an effective sink for the adatoms due to a reduced surface mobility on the polar top of the wires. This diffusion channel, which is enhanced at higher T{sub sub}, becomes more significant for smaller wire diameters, because its contribution scales like 1/d. Experiments with an interruption of the growth and sharp interfaces in TEM images of heterostructures show that the suggestion in literature of a droplet-mediated PA-MBE nitride growth has to be discarded. Despite a thin amorphous silicon nitride wetting layer on the substrate surface, both GaN and InN nanowires grow in the wurtzite structure and epitaxially in a one-to-one relation to the Si(111) substrate surface. There is no evidence for cubic phases. TEM images and optical studies display a high crystalline and optical quality of GaN and InN nanowires. The substrate induces some strain in the bottom part of the nanowires, especially in InN due to the lower T{sub sub} than for GaN, which is released without the formation of dislocations. Only some stacking

Biofunctionalization of zinc oxide nanowires for DNA sensory applications

Directory of Open Access Journals (Sweden)

Rudolph Bettina

2011-01-01

Full Text Available Abstract We report on the biofunctionalization of zinc oxide nanowires for the attachment of DNA target molecules on the nanowire surface. With the organosilane glycidyloxypropyltrimethoxysilane acting as a bifunctional linker, amino-modified capture molecule oligonucleotides have been immobilized on the nanowire surface. The dye-marked DNA molecules were detected via fluorescence microscopy, and our results reveal a successful attachment of DNA capture molecules onto the nanowire surface. The electrical field effect induced by the negatively charged attached DNA molecules should be able to control the electrical properties of the nanowires and gives way to a ZnO nanowire-based biosensing device.

Gold nanoparticle-embedded silk protein-ZnO nanorod hybrids for flexible bio-photonic devices

Science.gov (United States)

Gogurla, Narendar; Kundu, Subhas C.; Ray, Samit K.

2017-04-01

Silk protein has been used as a biopolymer substrate for flexible photonic devices. Here, we demonstrate ZnO nanorod array hybrid photodetectors on Au nanoparticle-embedded silk protein for flexible optoelectronics. Hybrid samples exhibit optical absorption at the band edge of ZnO as well as plasmonic energy due to Au nanoparticles, making them attractive for selective UV and visible wavelength detection. The device prepared on Au-silk protein shows a much lower dark current and a higher photo to dark-current ratio of ∼105 as compared to the control sample without Au nanoparticles. The hybrid device also exhibits a higher specific detectivity due to higher responsivity arising from the photo-generated hole trapping by Au nanoparticles. Sharp pulses in the transient photocurrent have been observed in devices prepared on glass and Au-silk protein substrates due to the light induced pyroelectric effect of ZnO, enabling the demonstration of self-powered photodetectors at zero bias. Flexible hybrid detectors have been demonstrated on Au-silk/polyethylene terephthalate substrates, exhibiting characteristics similar to those fabricated on rigid glass substrates. A study of the performance of photodetectors with different bending angles indicates very good mechanical stability of silk protein based flexible devices. This novel concept of ZnO nanorod array photodetectors on a natural silk protein platform provides an opportunity to realize integrated flexible and self-powered bio-photonic devices for medical applications in near future.

Superconducting Nanowires as Nonlinear Inductive Elements for Qubits

OpenAIRE

Ku, Jaseung; Manucharyan, Vladimir; Bezryadin, Alexey

2010-01-01

We report microwave transmission measurements of superconducting Fabry-Perot resonators (SFPR), having a superconducting nanowire placed at a supercurrent antinode. As the plasma oscillation is excited, the supercurrent is forced to flow through the nanowire. The microwave transmission of the resonator-nanowire device shows a nonlinear resonance behavior, significantly dependent on the amplitude of the supercurrent oscillation. We show that such amplitude-dependent response is due to the nonl...

Large area, low capacitance, GaAs nanowire photodetector with a transparent Schottky collecting junction

Energy Technology Data Exchange (ETDEWEB)

Seyedi, M. A., E-mail: seyedi@usc.edu; Yao, M.; O' Brien, J.; Dapkus, P. D. [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States); Wang, S. Y. [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States); Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California, Santa Cruz, California 95064, USA and NASA Ames Research Center, Moffett Field, California 94035 (United States)

2013-12-16

We present experimental results on a GaAs/Indium-Tin-Oxide Schottky-like heterojunction photodetector based on a nanowire device geometry. By distributing the active detecting area over an array of nanowires, it is possible to achieve large area detection with low capacitance. Devices with bare GaAs and passivated AlGaAs/GaAs nanowires are fabricated to compare the responsivity with and without surface passivation. We are able to achieve responsivity of >0.5A/W and Signal-Noise-Ratio in excess of 7 dB for 2 V applied reverse bias with passivated nanowire devices. Capacitance-voltage measurement yields <5 nF/cm{sup 2}, which shows a strong possibility for high-speed applications with a broad area device.

Young's Modulus of Wurtzite and Zinc Blende InP Nanowires.

Science.gov (United States)

Dunaevskiy, Mikhail; Geydt, Pavel; Lähderanta, Erkki; Alekseev, Prokhor; Haggrén, Tuomas; Kakko, Joona-Pekko; Jiang, Hua; Lipsanen, Harri

2017-06-14

The Young's modulus of thin conical InP nanowires with either wurtzite or mixed "zinc blende/wurtzite" structures was measured. It has been shown that the value of Young's modulus obtained for wurtzite InP nanowires (E [0001] = 130 ± 30 GPa) was similar to the theoretically predicted value for the wurtzite InP material (E [0001] = 120 ± 10 GPa). The Young's modulus of mixed "zinc blende/wurtzite" InP nanowires (E [111] = 65 ± 10 GPa) appeared to be 40% less than the theoretically predicted value for the zinc blende InP material (E [111] = 110 GPa). An advanced method for measuring the Young's modulus of thin and flexible nanostructures is proposed. It consists of measuring the flexibility (the inverse of stiffness) profiles 1/k(x) by the scanning probe microscopy with precise control of loading force in nanonewton range followed by simulations.

Solid state MEMS devices on flexible and semi-transparent silicon (100) platform

KAUST Repository

Ahmed, Sally; Hussain, Aftab M.; Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

2014-01-01

We report fabrication of MEMS thermal actuators on flexible and semi-transparent silicon fabric released from bulk silicon (100). We fabricated the devices first and then released the top portion of the silicon (≈ 19 μm) which is flexible and semi-transparent. We also performed chemical mechanical polishing to reuse the remaining wafer. A tested thermal actuator with 3 μm wide 240 μm hot arm and 10 μm wide 185 μm long cold arm deflected by 1.7 μm at 1 V. The fabricated thermal actuators exhibit similar performance before and after bending. We believe the demonstrated process will expand the horizon of flexible electronics into MEMS world devices. © 2014 IEEE.

Three-dimensional hierarchical NiCo2O4 nanowire@Ni3S2 nanosheet core/shell arrays for flexible asymmetric supercapacitors

Science.gov (United States)

Liu, Bo; Kong, Dezhi; Huang, Zhi Xiang; Mo, Runwei; Wang, Ye; Han, Zhaojun; Cheng, Chuanwei; Yang, Hui Ying

2016-05-01

Three-dimensional (3D) hierarchical NiCo2O4@Ni3S2 core/shell arrays on Ni foam were synthesized by a facile, stepwise synthesis approach. The 3D heterogeneous NiCo2O4 nanostructure forms an interconnected web-like scaffold and serves as the core for the Ni3S2 shell. The as-prepared NiCo2O4@Ni3S2 nanowire array (NWA) electrodes exhibited excellent electrochemical performance, such as high specific areal capacitance and excellent cycling stability. The specific areal capacitance of 3.0 F cm-2 at a current density of 5 mA cm-2 is among the highest values and the only 6.7% capacitance decay after 10 000 cycles demonstrates the excellent cycling stability. A flexible asymmetric supercapacitor (ASC) was fabricated with activated carbon (AC) as the anode and the obtained NiCo2O4@Ni3S2 NWAs as the cathode. The ASC device exhibited a high energy density of 1.89 mW h cm-3 at 5.81 W cm-3 and a high power density of 56.33 W cm-3 at 0.94 mW h cm-3. As a result, the hybrid nanoarchitecture opens a new way to design high performance electrodes for electrochemical energy storage applications.Three-dimensional (3D) hierarchical NiCo2O4@Ni3S2 core/shell arrays on Ni foam were synthesized by a facile, stepwise synthesis approach. The 3D heterogeneous NiCo2O4 nanostructure forms an interconnected web-like scaffold and serves as the core for the Ni3S2 shell. The as-prepared NiCo2O4@Ni3S2 nanowire array (NWA) electrodes exhibited excellent electrochemical performance, such as high specific areal capacitance and excellent cycling stability. The specific areal capacitance of 3.0 F cm-2 at a current density of 5 mA cm-2 is among the highest values and the only 6.7% capacitance decay after 10 000 cycles demonstrates the excellent cycling stability. A flexible asymmetric supercapacitor (ASC) was fabricated with activated carbon (AC) as the anode and the obtained NiCo2O4@Ni3S2 NWAs as the cathode. The ASC device exhibited a high energy density of 1.89 mW h cm-3 at 5.81 W cm-3 and a high power

Synthesis of InSb Nanowire Architectures - Building Blocks for Majorana Devices

Science.gov (United States)

Car, Diana

Breakthroughs in material development are playing a major role in the emerging field of topological quantum computation with Majorana Zero Modes (MZMs). Due to the strong spin-orbit interaction and large Landé g-factor InSb nanowires are one of the most promising one dimensional material systems in which to detect MZMs. The next generation of Majorana experiments should move beyond zero-mode detection and demonstrate the non-Abelian nature of MZMs by braiding. To achieve this goal advanced material platforms are needed: low-disorder, single-crystalline, planar networks of nanowires with high spin-orbit energy. In this talk I will discuss the formation and electronic properties of InSb nanowire networks. The bottom-up synthesis method we have developed is generic and can be employed to synthesize interconnected nanowire architectures of group III-V, II-VI and IV materials as long as they grow along a direction.

Manufacturing and testing flexible microfluidic devices with optical and electrical detection mechanisms

NARCIS (Netherlands)

Ivan, M.G.; Vivet, F.; Meinders, E.R.

2010-01-01

Flexible microfluidic devices made of poly(dimethylsiloxane) (PDMS) were manufactured by soft lithography, and tested in detection of ionic species using optical absorption spectroscopy and electrical measurements. PDMS was chosen due to its flexibility and ease of surface modification by exposure

The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires

International Nuclear Information System (INIS)

Joyce, Hannah J; Baig, Sarwat A; Parkinson, Patrick; Davies, Christopher L; Boland, Jessica L; Herz, Laura M; Johnston, Michael B; Tan, H Hoe; Jagadish, Chennupati

2017-01-01

Bare unpassivated GaAs nanowires feature relatively high electron mobilities (400–2100 cm 2 V −1 s −1 ) and ultrashort charge carrier lifetimes (1–5 ps) at room temperature. These two properties are highly desirable for high speed optoelectronic devices, including photoreceivers, modulators and switches operating at microwave and terahertz frequencies. When engineering these GaAs nanowire-based devices, it is important to have a quantitative understanding of how the charge carrier mobility and lifetime can be tuned. Here we use optical-pump–terahertz-probe spectroscopy to quantify how mobility and lifetime depend on the nanowire surfaces and on carrier density in unpassivated GaAs nanowires. We also present two alternative frameworks for the analysis of nanowire photoconductivity: one based on plasmon resonance and the other based on Maxwell–Garnett effective medium theory with the nanowires modelled as prolate ellipsoids. We find the electron mobility decreases significantly with decreasing nanowire diameter, as charge carriers experience increased scattering at nanowire surfaces. Reducing the diameter from 50 nm to 30 nm degrades the electron mobility by up to 47%. Photoconductivity dynamics were dominated by trapping at saturable states existing at the nanowire surface, and the trapping rate was highest for the nanowires of narrowest diameter. The maximum surface recombination velocity, which occurs in the limit of all traps being empty, was calculated as 1.3  ×  10 6 cm s −1 . We note that when selecting the optimum nanowire diameter for an ultrafast device, there is a trade-off between achieving a short lifetime and a high carrier mobility. To achieve high speed GaAs nanowire devices featuring the highest charge carrier mobilities and shortest lifetimes, we recommend operating the devices at low charge carrier densities. (paper)

A novel needle-type sampling device for flexible ultrathin bronchoscopy

International Nuclear Information System (INIS)

Suda, Yuji; Hayashi, Katsutoshi; Shindoh, Yuriko; Iijima, Hideya; Tanaka, Akiko

2008-01-01

Diagnosis of suspected cancer in the periphery of the lung is difficult. A flexible ultrathin bronchoscope has been developed for the diagnosis of peripherally located pulmonary lesions that cannot be reached with the sampling devices for standard flexible bronchoscopes. The diagnostic yield with forceps and a brush for ultrathin bronchoscopes, however, is not adequate, especially when a lesion is not exposed to the bronchial lumen. We have thus developed a novel needle-type sampling device and tested its yield in transbronchial cytology. The device consists of an elongated dental H-file (0.4 mm in diameter and 110 cm in length), a housing sheath (1.0 mm in outer diameter), and a novel handle, which enables rapid out-and-in motion of the needle. Ten consecutive patients with a peripheral pulmonary lesion who had an indication for diagnostic procedure with a flexible ultrathin bronchoscope were enrolled. The optimal bronchial route to the lesion was analyzed with virtual bronchoscopy in a data set obtained with high-resolution computed tomography, and a novel bronchial route labeling system (prior-ridge-based relative orientation nomenclature) was employed to guide insertion of the bronchoscope. Sampling with the novel needle was performed prior to use of the forceps and brush under conventional fluoroscopy. In all the cases, sampling with the needle was successful and the amount of the specimen was sufficient for cytology. Our novel sampling system with flexible ultrathin bronchoscopes may contribute to accurate and minimally invasive diagnosis of peripheral pulmonary lesions. (author)

Understanding the true shape of Au-catalyzed GaAs nanowires.

Science.gov (United States)

Jiang, Nian; Wong-Leung, Jennifer; Joyce, Hannah J; Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati

2014-10-08

With increasing interest in nanowire-based devices, a thorough understanding of the nanowire shape is required to gain tight control of the quality of nanowire heterostructures and improve the performance of related devices. We present a systematic study of the sidewalls of Au-catalyzed GaAs nanowires by investigating the faceting process from the beginning with vapor-liquid-solid (VLS) nucleation, followed by the simultaneous radial growth on the sidewalls, and to the end with sidewall transformation during annealing. The VLS nucleation interface of our GaAs nanowires is revealed by examining cross sections of the nanowire, where the nanowire exhibits a Reuleaux triangular shape with three curved surfaces along {112}A. These curved surfaces are not thermodynamically stable and adopt {112}A facets during radial growth. We observe clear differences in radial growth rate between the ⟨112⟩A and ⟨112⟩B directions with {112}B facets forming due to the slower radial growth rate along ⟨112⟩B directions. These sidewalls transform to {110} facets after high temperature (>500 °C) annealing. A nucleation model is proposed to explain the origin of the Reuleaux triangular shape of the nanowires, and the sidewall evolution is explained by surface kinetic and thermodynamic limitations.

Effect of indium on photovoltaic property of n-ZnO/p-Si heterojunction device prepared using solution-synthesized ZnO nanowire film

Science.gov (United States)

Kathalingam, Adaikalam; Kim, Hyun-Seok; Park, Hyung-Moo; Valanarasu, Santiyagu; Mahalingam, Thaiyan

2015-01-01

Preparation of n-ZnO/p-Si heterostructures using solution-synthesized ZnO nanowire films and their photovoltaic characterization is reported. The solution-grown ZnO nanowire film is characterized using scanning electron microscope, electron dispersive x-ray, and optical absorption studies. Electrical and photovoltaic properties of the fabricated heterostructures are studied using e-beam-evaporated aluminum as metal contacts. In order to use transparent contact and to simultaneously collect the photogenerated carriers, sandwich-type solar cells were fabricated using ZnO nanorod films grown on p-silicon and indium tin oxide (ITO) coated glass as ITO/n-ZnO NR/p-Si. The electrical properties of these structures are analyzed from current-voltage (I-V) characteristics. ZnO nanowire film thickness-dependent photovoltaic properties are also studied. Indium metal was also deposited over the ZnO nanowires and its effects on the photovoltaic response of the devices were studied. The results demonstrated that all the samples exhibit a strong rectifying behavior indicating the diode nature of the devices. The sandwich-type ITO/n-ZnO NR/p-Si solar cells exhibit improved photovoltaic performance over the Al-metal-coated n-ZnO/p-Si structures. The indium deposition is found to show enhancement in photovoltaic behavior with a maximum open-circuit voltage (Voc) of 0.3 V and short-circuit current (Isc) of 70×10-6 A under ultraviolet light excitation.

Complex Electric-Field Induced Phenomena in Ferroelectric/Antiferroelectric Nanowires

Science.gov (United States)

Herchig, Ryan Christopher

Perovskite ferroelectrics and antiferroelectrics have attracted a lot of attention owing to their potential for device applications including THz sensors, solid state cooling, ultra high density computer memory, and electromechanical actuators to name a few. The discovery of ferroelectricity at the nanoscale provides not only new and exciting possibilities for device miniaturization, but also a way to study the fundamental physics of nanoscale phenomena in these materials. Ferroelectric nanowires show a rich variety of physical characteristics which are advantageous to the design of nanoscale ferroelectric devices such as exotic dipole patterns, a strong dependence of the polarization and phonon frequencies on the electrical and mechanical boundary conditions, as well as a dependence of the transition temperatures on the diameter of the nanowire. Antiferroelectricity also exists at the nanoscale and, due to the proximity in energy of the ferroelectric and antiferroelectric phases, a phase transition from the ferroelectric to the antiferroelectric phase can be facilitated through the application of the appropriate mechanical and electrical boundary conditions. While much progress has been made over the past several decades to understand the nature of ferroelectricity/antiferroelectricity in nanowires, many questions remain unanswered. In particular, little is known about how the truncated dimensions affect the soft mode frequency dynamics or how various electrical and mechanical boundary conditions might change the nature of the phase transitions in these ferroelectric nanowires. Could nanowires offer a distinct advantage for solid state cooling applications? Few studies have been done to elucidate the fundamental physics of antiferroelectric nanowires. How the polarization in ferroelectric nanowires responds to a THz electric field remains relatively underexplored as well. In this work, the aim is to to develop and use computational tools that allow first

{100} or 45.degree.-rotated {100}, semiconductor-based, large-area, flexible, electronic devices

Science.gov (United States)

Goyal, Amit [Knoxville, TN

2012-05-15

Novel articles and methods to fabricate the same resulting in flexible, {100} or 45.degree.-rotated {100} oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Enhancing light emission in flexible AC electroluminescent devices by tetrapod-like zinc oxide whiskers.

Science.gov (United States)

Wen, Li; Liu, Nishuang; Wang, Siliang; Zhang, Hui; Zhao, Wanqiu; Yang, Zhichun; Wang, Yumei; Su, Jun; Li, Luying; Long, Fei; Zou, Zhengguang; Gao, Yihua

2016-10-03

Flexible alternating current electroluminescent devices (ACEL) are more and more popular and widely used in liquid-crystal display back-lighting, large-scale architectural and decorative lighting due to their uniform light emission, low power consumption and high resolution. However, presently how to acquire high brightness under a certain voltage are confronted with challenges. Here, we demonstrate an electroluminescence (EL) enhancing strategy that tetrapod-like ZnO whiskers (T-ZnOw) are added into the bottom electrode of carbon nanotubes (CNTs) instead of phosphor layer in flexible ACEL devices emitting blue, green and orange lights, and the brightness is greatly enhanced due to the coupling between the T-ZnOw and ZnS phosphor dispersed in the flexible polydimethylsiloxane (PDMS) layer. This strategy provides a new routine for the development of high performance, flexible and large-area ACEL devices.

Chip-to-chip SnO2 nanowire network sensors for room temperature H2 detection

Science.gov (United States)

Köck, A.; Brunet, E.; Mutinati, G. C.; Maier, T.; Steinhauer, S.

2012-06-01

The employment of nanowires is a very powerful strategy to improve gas sensor performance. We demonstrate a gas sensor device, which is based on silicon chip-to-chip synthesis of ultralong tin oxide (SnO2) nanowires. The sensor device employs an interconnected SnO2 nanowire network configuration, which exhibits a huge surface-to-volume ratio and provides full access of the target gas to the nanowires. The chip-to-chip SnO2 nanowire device is able to detect a H2 concentration of only 20 ppm in synthetic air with ~ 60% relative humidity at room temperature. At an operating temperature of 300°C a concentration of 50 ppm H2 results in a sensitivity of 5%. At this elevated temperature the sensor shows a linear response in a concentration range between 10 ppm and 100 ppm H2. The SnO2-nanowire fabrication procedure based on spray pyrolysis and subsequent annealing is performed at atmospheric pressure, requires no vacuum and allows upscale of the substrate to a wafer size. 3D-integration with CMOS chips is proposed as viable way for practical realization of smart nanowire based gas sensor devices for the consumer market.

Polymer-electrolyte-gated nanowire synaptic transistors for neuromorphic applications

Science.gov (United States)

Zou, Can; Sun, Jia; Gou, Guangyang; Kong, Ling-An; Qian, Chuan; Dai, Guozhang; Yang, Junliang; Guo, Guang-hua

2017-09-01

Polymer-electrolytes are formed by dissolving a salt in polymer instead of water, the conducting mechanism involves the segmental motion-assisted diffusion of ion in the polymer matrix. Here, we report on the fabrication of tin oxide (SnO2) nanowire synaptic transistors using polymer-electrolyte gating. A thin layer of poly(ethylene oxide) and lithium perchlorate (PEO/LiClO4) was deposited on top of the devices, which was used to boost device performances. A voltage spike applied on the in-plane gate attracts ions toward the polymer-electrolyte/SnO2 nanowire interface and the ions are gradually returned after the pulse is removed, which can induce a dynamic excitatory postsynaptic current in the nanowire channel. The SnO2 synaptic transistors exhibit the behavior of short-term plasticity like the paired-pulse facilitation and self-adaptation, which is related to the electric double-effect regulation. In addition, the synaptic logic functions and the logical function transformation are also discussed. Such single SnO2 nanowire-based synaptic transistors are of great importance for future neuromorphic devices.

Design of Large Area PLEDs on Flexible Substrates: Highly Efficient Flexible Devices Using a Statistical Copolymer of Oxadiazole-Containing PPV

National Research Council Canada - National Science Library

Christian, Hermona Y; Vaidyanathan, Subbu; Ko, Changhee; Galvin, Mary E; Beyer, Rick

2004-01-01

With polymers as the active layer on a plastic substrate, construction of flexible devices is possible, although the use of calcium cathodes places stringent requirements on the encapsulation of the device...

Plasmonic Nanowires for Wide Wavelength Range Molecular Sensing

KAUST Repository

Marinaro, Giovanni

2018-05-17

In this paper, we propose the use of a standing nanowires array, constituted by plasmonic active gold wires grown on iron disks, and partially immersed in a supporting alumina matrix, for surface-enhanced Raman spectroscopy applications. The galvanic process was used to fabricate nanowires in pores of anodized alumina template, making this device cost-effective. This fabrication method allows for the selection of size, diameter, and spatial arrangement of nanowires. The proposed device, thanks to a detailed design analysis, demonstrates a broadband plasmonic enhancement effect useful for many standard excitation wavelengths in the visible and NIR. The trigonal pores arrangement gives an efficiency weakly dependent on polarization. The devices, tested with 633 and 830 nm laser lines, show a significant Raman enhancement factor, up to around 6 × 10⁴, with respect to the flat gold surface, used as a reference for the measurements of the investigated molecules.

Flexible Graphene-based Energy Storage Devices for Space Application Project

Science.gov (United States)

Calle, Carlos I.

2014-01-01

Develop prototype graphene-based reversible energy storage devices that are flexible, thin, lightweight, durable, and that can be easily attached to spacesuits, rovers, landers, and equipment used in space.

Silicon nanowires for photovoltaic solar energy conversion.

Science.gov (United States)

Peng, Kui-Qing; Lee, Shuit-Tong

2011-01-11

Semiconductor nanowires are attracting intense interest as a promising material for solar energy conversion for the new-generation photovoltaic (PV) technology. In particular, silicon nanowires (SiNWs) are under active investigation for PV applications because they offer novel approaches for solar-to-electric energy conversion leading to high-efficiency devices via simple manufacturing. This article reviews the recent developments in the utilization of SiNWs for PV applications, the relationship between SiNW-based PV device structure and performance, and the challenges to obtaining high-performance cost-effective solar cells.

Synthetic Strategies and Applications of GaN Nanowires

Directory of Open Access Journals (Sweden)

Guoquan Suo

2014-01-01

Full Text Available GaN is an important III-V semiconductor material with a direct band gap of 3.4 eV at 300 K. The wide direct band gap makes GaN an attractive material for various applications. GaN nanowires have demonstrated significant potential as fundamental building blocks for nanoelectronic and nanophotonic devices and also offer substantial promise for integrated nanosystems. In this paper, we provide a comprehensive review on the general synthetic strategies, characterizations, and applications of GaN nanowires. We first summarize several growth techniques of GaN nanowires. Subsequently, we discuss mechanisms involved to generate GaN nanowires from different synthetic schemes and conditions. Then we review some characterization methods of GaN nanowires. Finally, several kinds of main applications of GaN nanowires are discussed.

A facile one-step approach for the fabrication of polypyrrole nanowire/carbon fiber hybrid electrodes for flexible high performance solid-state supercapacitors

Science.gov (United States)

Huang, Sanqing; Han, Yichuan; Lyu, Siwei; Lin, Wenzhen; Chen, Peishan; Fang, Shaoli

2017-10-01

Wearable electronics are in high demand, requiring that all the components are flexible. Here we report a facile approach for the fabrication of flexible polypyrrole nanowire (NPPy)/carbon fiber (CF) hybrid electrodes with high electrochemical activity using a low-cost, one-step electrodeposition method. The structure of the NPPy/CF electrodes can be easily controlled by the applied electrical potential and electrodeposition time. Our NPPy/CF-based electrodes showed high flexibility, conductivity, and stability, making them ideal for flexible all-solid-state fiber supercapacitors. The resulting NPPy/CF-based supercapacitors provided a high specific capacitance of 148.4 F g-1 at 0.128 A g-1, which is much higher than for supercapacitors based on polypyrrole film/CF (38.3 F g-1) and pure CF (0.6 F g-1) under the same conditions. The NPPy/CF-based supercapacitors also showed high bending and cycling stability, retaining 84% of the initial capacitance after 500 bending cycles, and 91% of the initial capacitance after 5000 charge/discharge cycles.

A facile one-step approach for the fabrication of polypyrrole nanowire/carbon fiber hybrid electrodes for flexible high performance solid-state supercapacitors.

Science.gov (United States)

Huang, Sanqing; Han, Yichuan; Lyu, Siwei; Lin, Wenzhen; Chen, Peishan; Fang, Shaoli

2017-10-27

Wearable electronics are in high demand, requiring that all the components are flexible. Here we report a facile approach for the fabrication of flexible polypyrrole nanowire (NPPy)/carbon fiber (CF) hybrid electrodes with high electrochemical activity using a low-cost, one-step electrodeposition method. The structure of the NPPy/CF electrodes can be easily controlled by the applied electrical potential and electrodeposition time. Our NPPy/CF-based electrodes showed high flexibility, conductivity, and stability, making them ideal for flexible all-solid-state fiber supercapacitors. The resulting NPPy/CF-based supercapacitors provided a high specific capacitance of 148.4 F g -1 at 0.128 A g -1 , which is much higher than for supercapacitors based on polypyrrole film/CF (38.3 F g -1 ) and pure CF (0.6 F g -1 ) under the same conditions. The NPPy/CF-based supercapacitors also showed high bending and cycling stability, retaining 84% of the initial capacitance after 500 bending cycles, and 91% of the initial capacitance after 5000 charge/discharge cycles.

Lasing in ZnO and CdS nanowires

Energy Technology Data Exchange (ETDEWEB)

Thielmann, Andreas; Geburt, Sebastian; Kozlik, Michael; Kuehnel, Julian; Borschel, Christian; Ronning, Carsten [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany)

2011-07-01

The development of nanoscaled semiconductor lasers could be the key resolution to the still persistent size mismatch between integrated microelectronic devices and semiconductor optoelectronic devices. Semiconductor nanowires offer an elegant path to the development of nanoscaled lasers as their geometry with two planar end facets naturally combines a fiber-like waveguide with an optical resonator. The possible stimulation of the material's emission processes enables lasing of resonant optical modes. ZnO and CdS nanowires of different aspect ratios have been synthesized via the VLS mechanism and were characterized by SEM, EDX and ensemble PL measurements. Power dependent PL measurements on single nanowires excited with pulsed laser light at 355 nm have been performed between 10 K and room temperature and were set in correlation to the nanowires' respective morphology. Sharp emission lines which show characteristics of Fabry-Perot modes could be observed above a power threshold. The measured power dependencies reveal amplified stimulated emission and lasing at high excitation densities.

Disorder-induced enhancement of conductance in doped nanowires

Institute of Scientific and Technical Information of China (English)

Xu Ning; Wang Bao-Lin; Sun Hou-Qian; Kong Fan-Jie

2010-01-01

A new mechanism is proposed to explain the enhancement of conductance in doped nanowires. It is shown that the anomalous enhancement of conductance is due to surface doping. The conductance in doped nanowires increases with dopant concentration, which is qualitatively consistent with the existing experimental results. In addition, the I-V curves are linear and thus suggest that the metal electrodes make ohmic contacts to the shell-doped nanowires.The electric current increases with wire diameter (D) and decreases exponentially with wire length (L). Therefore, the doped nanowires have potential application in nanoscale electronic and optoelectronic devices.

Title: Using Alignment and 2D Network Simulations to Study Charge Transport Through Doped ZnO Nanowire Thin Film Electrodes

KAUST Repository

Phadke, Sujay

2011-09-30

Factors affecting charge transport through ZnO nanowire mat films were studied by aligning ZnO nanowires on substrates and coupling experimental measurements with 2D nanowire network simulations. Gallium doped ZnO nanowires were aligned on thermally oxidized silicon wafer by shearing a nanowire dispersion in ethanol. Sheet resistances of nanowire thin films that had current flowing parallel to nanowire alignment direction were compared to thin films that had current flowing perpendicular to nanowire alignment direction. Perpendicular devices showed ∼5 fold greater sheet resistance than parallel devices supporting the hypothesis that aligning nanowires would increase conductivity of ZnO nanowire electrodes. 2-D nanowire network simulations of thin films showed that the device sheet resistance was dominated by inter-wire contact resistance. For a given resistivity of ZnO nanowires, the thin film electrodes would have the lowest possible sheet resistance if the inter-wire contact resistance was one order of magnitude lower than the single nanowire resistance. Simulations suggest that the conductivity of such thin film devices could be further enhanced by using longer nanowires. Solution processed Gallium doped ZnO nanowires are aligned on substrates using an innovative shear coating technique. Nanowire alignment has shown improvement in ZnO nanowire transparent electrode conductivity. 2D network simulations in conjunction with electrical measurements have revealed different regimes of operation of nanowire thin films and provided a guideline for improving electrical performance of nanowire electrodes. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Screening model for nanowire surface-charge sensors in liquid

DEFF Research Database (Denmark)

Sørensen, Martin Hedegård; Mortensen, Asger; Brandbyge, Mads

2007-01-01

The conductance change of nanowire field-effect transistors is considered a highly sensitive probe for surface charge. However, Debye screening of relevant physiological liquid environments challenge device performance due to competing screening from the ionic liquid and nanowire charge carriers....

Nano/CMOS architectures using a field-programmable nanowire interconnect

International Nuclear Information System (INIS)

Snider, Gregory S; Williams, R Stanley

2007-01-01

A field-programmable nanowire interconnect (FPNI) enables a family of hybrid nano/CMOS circuit architectures that generalizes the CMOL (CMOS/molecular hybrid) approach proposed by Strukov and Likharev, allowing for simpler fabrication, more conservative process parameters, and greater flexibility in the choice of nanoscale devices. The FPNI improves on a field-programmable gate array (FPGA) architecture by lifting the configuration bit and associated components out of the semiconductor plane and replacing them in the interconnect with nonvolatile switches, which decreases both the area and power consumption of the circuit. This is an example of a more comprehensive strategy for improving the efficiency of existing semiconductor technology: placing a level of intelligence and configurability in the interconnect can have a profound effect on integrated circuit performance, and can be used to significantly extend Moore's law without having to shrink the transistors. Compilation of standard benchmark circuits onto FPNI chip models shows reduced area (8 x to 25 x), reduced power, slightly lower clock speeds, and high defect tolerance-an FPNI chip with 20% defective junctions and 20% broken nanowires has an effective yield of 75% with no significant slowdown along the critical path, compared to a defect-free chip. Simulations show that the density and power improvements continue as both CMOS and nano fabrication parameters scale down, although the maximum clock rate decreases due to the high resistance of very small (<10 nm) metallic nanowires

Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation

Science.gov (United States)

Duffy, Ray; Ricchio, Alessio; Murphy, Ruaidhrí; Maxwell, Graeme; Murphy, Richard; Piaszenski, Guido; Petkov, Nikolay; Hydes, Alan; O'Connell, Dan; Lyons, Colin; Kennedy, Noel; Sheehan, Brendan; Schmidt, Michael; Crupi, Felice; Holmes, Justin D.; Hurley, Paul K.; Connolly, James; Hatem, Chris; Long, Brenda

2018-03-01

The advent of high surface-to-volume ratio devices has necessitated a revised approach to parameter extraction and process evaluation in field-effect transistor technologies. In this work, active doping concentrations are extracted from the electrical analysis of Si nanowire devices with high surface-to-volume ratios. Nanowire resistance and Si resistivity are extracted, by first extracting and subtracting out the contact resistance. Resistivity (ρ) is selected as the benchmark parameter to compare different doping processes with each other. The impacts of nanowire diameter scaling to 10 nm and of nanowire spacing scaling to resistivity and higher dopant activation, with dependencies on the nanowire width greater than on nanowire spacing. Limitations in ADP P monolayer doping with a SiO2 cap are due to the difficulties in dopant incorporation, as it is based on in-diffusion, and P atoms must overcome a potential barrier on the Si surface.

Stress-induced state transitions in flexible liquid-crystal devices

International Nuclear Information System (INIS)

Ho, I-Lin; Chang, Yia-Chung

2012-01-01

This work studies the stress-strain dynamics for the transient optoelectronic characteristics of flexible liquid-crystal (LC) devices. Due to the fast response of LC directors, the configuration of the LC is assumed to be in quasi-equilibrium during the process of elastic deformations of the flexible structures. The LC medium hence can be treated effectively as a thin-film layer and can approximately follow the strain-stress mechanism in the solids. Relevant theoretical algorithms are studied in this work, and numerical results present the stress-induced state transitions in the π cell.

In situ fabrication of Ni-Co (oxy)hydroxide nanowire-supported nanoflake arrays and their application in supercapacitors.

Science.gov (United States)

Zheng, Xiaoyu; Quan, Honglin; Li, Xiaoxin; He, Hai; Ye, Qinglan; Xu, Xuetang; Wang, Fan

2016-09-29

Three-dimensional (3D) hybrid nanostructured arrays grown on a flexible substrate have recently attracted great attention owing to their potential application as supercapacitor electrodes in portable and wearable electronic devices. Here, we report an in situ conversion of Ni-Co active electrode materials for the fabrication of high-performance electrodes. Ni-Co carbonate hydroxide nanowire arrays on carbon cloth were initially synthesized via a hydrothermal method, and they were gradually converted to Ni-Co (oxy)hydroxide nanowire-supported nanoflake arrays after soaking in an alkaline solution. The evolution of the supercapacitor performance of the soaked electrode was investigated in detail. The areal capacitance increases from 281 mF cm -2 at 1 mA cm -2 to 3710 and 3900 mF cm -2 after soaking for 36 h and 48 h, respectively. More interestingly, the electrode also shows an increased capacitance with charge/discharge cycles due to the long-time soaking in KOH solution, suggesting novel cycling durability. The enhancement in capacitive performance should be related to the formation of a unique nanowire-supported nanoflake array architecture, which controls the agglomeration of nanoflakes, making them fully activated. As a result, the facile in situ fabrication of the hybrid architectural design in this study provides a new approach to fabricate high-performance Ni/Co based hydroxide nanostructure arrays for next-generation energy storage devices.

Highly Flexible and Efficient Solar Steam Generation Device.

Science.gov (United States)

Chen, Chaoji; Li, Yiju; Song, Jianwei; Yang, Zhi; Kuang, Yudi; Hitz, Emily; Jia, Chao; Gong, Amy; Jiang, Feng; Zhu, J Y; Yang, Bao; Xie, Jia; Hu, Liangbing

2017-08-01

Solar steam generation with subsequent steam recondensation has been regarded as one of the most promising techniques to utilize the abundant solar energy and sea water or other unpurified water through water purification, desalination, and distillation. Although tremendous efforts have been dedicated to developing high-efficiency solar steam generation devices, challenges remain in terms of the relatively low efficiency, complicated fabrications, high cost, and inability to scale up. Here, inspired by the water transpiration behavior of trees, the use of carbon nanotube (CNT)-modified flexible wood membrane (F-Wood/CNTs) is demonstrated as a flexible, portable, recyclable, and efficient solar steam generation device for low-cost and scalable solar steam generation applications. Benefitting from the unique structural merits of the F-Wood/CNTs membrane-a black CNT-coated hair-like surface with excellent light absorbability, wood matrix with low thermal conductivity, hierarchical micro- and nanochannels for water pumping and escaping, solar steam generation device based on the F-Wood/CNTs membrane demonstrates a high efficiency of 81% at 10 kW cm -2 , representing one of the highest values ever-reported. The nature-inspired design concept in this study is straightforward and easily scalable, representing one of the most promising solutions for renewable and portable solar energy generation and other related phase-change applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Mapping the Coulomb Environment in Interference-Quenched Ballistic Nanowires.

Science.gov (United States)

Gutstein, D; Lynall, D; Nair, S V; Savelyev, I; Blumin, M; Ercolani, D; Ruda, H E

2018-01-10

The conductance of semiconductor nanowires is strongly dependent on their electrostatic history because of the overwhelming influence of charged surface and interface states on electron confinement and scattering. We show that InAs nanowire field-effect transistor devices can be conditioned to suppress resonances that obscure quantized conduction thereby revealing as many as six sub-bands in the conductance spectra as the Fermi-level is swept across the sub-band energies. The energy level spectra extracted from conductance, coupled with detailed modeling shows the significance of the interface state charge distribution revealing the Coulomb landscape of the nanowire device. Inclusion of self-consistent Coulomb potentials, the measured geometrical shape of the nanowire, the gate geometry and nonparabolicity of the conduction band provide a quantitative and accurate description of the confinement potential and resulting energy level structure. Surfaces of the nanowire terminated by HfO 2 are shown to have their interface donor density reduced by a factor of 30 signifying the passivating role played by HfO 2 .

An Enhanced UV-Vis-NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure.

Science.gov (United States)

Zheng, Zhi; Gan, Lin; Zhang, Jianbing; Zhuge, Fuwei; Zhai, Tianyou

2017-03-01

ZnO nanostructure-based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted in the UV region dictated by its bandgap. Herein, UV-vis-NIR sensitive ZnO photodetectors consisting of ZnO nanowires (NW) array/PbS quantum dots (QDs) heterostructures are fabricated through modified electrospining method and an exchanging process. Besides wider response region compared to pure ZnO NWs based photodetectors, the heterostructures based photodetectors have faster response and recovery speed in UV range. Moreover, such photodetectors demonstrate good flexibility as well, which maintain almost constant performances under extreme (up to 180°) and repeat (up to 200 cycles) bending conditions in UV-vis-NIR range. Finally, this strategy is further verified on other kinds of 1D nanowires and 0D QDs, and similar enhancement on the performance of corresponding photodetecetors can be acquired, evidencing the universality of this strategy.

Gate-tunable Andreev bound states in InSb nanowire Josephson junction

Energy Technology Data Exchange (ETDEWEB)

Kang, Ning; Li, Sen; Fan, Dingxun; Xu, Hongqi [Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871 (China); Caroff, Philippe [Division of Solid State Physics, Lund University, P. O. Box 118, S-221 00 Lund (Sweden)

2016-07-01

Hybrid InSb nanowire-superconductor devices are promising candidates for investigating Majorana modes in solid-state devices and future technologies of topological quantum manipulation. Here, we report low-temperature transport measurements on an individual InSb nanowire quantum dot coupled to superconducting contacts that exhibit an interplay between the Kondo effects and superconductivity. We observed two types of subgap resonance states within the superconducting gap, which can be attributed to gate-tunable Andreev bound states in Coulomb valleys with different Kondo temperatures. The presence of the gate-tunable 0 and pi junction allow us to investigate the fundamental 0- pi transition. Detailed magnetic field and temperature evolution of level spectroscopy demonstrate different behavior of two types of the Andreev bound states. Our results exhibit that the InSb nanowires can provide a promising platform for exploring phase coherence transport and the effect of spin-orbit coupling in semiconductor nanowire-superconductor hybrid device.

A study on ship impacting a flexible crashworthy device for protecting bridge pier

Directory of Open Access Journals (Sweden)

Yang Liming

2015-01-01

Full Text Available As the accident of a vessel impacting a bridge pier will cause serious disaster, such as destroyed bridge, sinking ship and polluting environment, the technology and method to protect bridge pier from ship collision have been widely investigated recently. Due to the huge kinetic energy of large-tonnage ship and the short time duration in the collision, the studies involve impact mechanics. A developed flexible crashworthy device has been developed to protect bridges, which consists of an outer steel-periphery, an inner steel-periphery and the rubber coating SWRCs(soft elements installed between them. When the SWRC crashworthy device is installed, the collision duration under low impact force is prolonged due to its high compliance, which results in the ship having enough time to turn its navigation direction and most of the remainder kinetic energy being carried off by the turned away ship. Consequently, both impact forces on the ship and on the bridge pier decrease markedly. This is the key reason as to why the SWRC crashworthy device can avoid the destruction of both the bridge and the ship. Based on our results of theoretical studies and numerical simulations, the present paper will propose an experiment-adopted a real ship to impact a flexible crashworthy device. The collision test has been performed 12 times with different speed, carrying capacity, and impact angle of the ship. After the experiments, the ship, flexible crashworthy device and the pier are not damaged. The experiments show that the flexible crashworthy device can turn away the impact ship, so that the ship moves along the outer part of the device, which reduces the ship impact force on the bridge pier obviously. It not only protects bridges but also avoids the damage to ships.

Piezoresistive silicon nanowire resonators as embedded building blocks in thick SOI

Science.gov (United States)

Nasr Esfahani, Mohammad; Kilinc, Yasin; Çagatay Karakan, M.; Orhan, Ezgi; Hanay, M. Selim; Leblebici, Yusuf; Erdem Alaca, B.

2018-04-01

The use of silicon nanowire resonators in nanoelectromechanical systems for new-generation sensing and communication devices faces integration challenges with higher-order structures. Monolithic and deterministic integration of such nanowires with the surrounding microscale architecture within the same thick crystal is a critical aspect for the improvement of throughput, reliability and device functionality. A monolithic and IC-compatible technology based on a tuned combination of etching and protection processes was recently introduced yielding silicon nanowires within a 10 μ m-thick device layer. Motivated by its success, the implications of the technology regarding the electromechanical resonance are studied within a particular setting, where the resonator is co-fabricated with all terminals and tuning electrodes. Frequency response is measured via piezoresistive readout with frequency down-mixing. Measurements indicate mechanical resonance with frequencies as high as 100 MHz exhibiting a Lorentzian behavior with proper transition to nonlinearity, while Allan deviation on the order of 3-8 ppm is achieved. Enabling the fabrication of silicon nanowires in thick silicon crystals using conventional semiconductor manufacturing, the present study thus demonstrates an alternative pathway to bottom-up and thin silicon-on-insulator approaches for silicon nanowire resonators.

Bipolar resistive switching of single gold-in-Ga2O3 nanowire.

Science.gov (United States)

Hsu, Chia-Wei; Chou, Li-Jen

2012-08-08

We have fabricated single nanowire chips on gold-in-Ga(2)O(3) core-shell nanowires using the electron-beam lithography techniques and realized bipolar resistive switching characteristics having invariable set and reset voltages. We attribute the unique property of invariance to the built-in conduction path of gold core. This invariance allows us to fabricate many resistive switching cells with the same operating voltage by simple depositing repetitive metal electrodes along a single nanowire. Other characteristics of these core-shell resistive switching nanowires include comparable driving electric field with other thin film and nanowire devices and a remarkable on/off ratio more than 3 orders of magnitude at a low driving voltage of 2 V. A smaller but still impressive on/off ratio of 10 can be obtained at an even lower bias of 0.2 V. These characteristics of gold-in-Ga(2)O(3) core-shell nanowires make fabrication of future high-density resistive memory devices possible.

Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications

KAUST Repository

Mohammed, Hanan

2018-04-18

A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of cobalt and nickel. The material interfaces acting as domain wall pinning sites, are utilized in combination with current pulses, to control the position of the domain wall, which is monitored using magnetoresistance measurements. Magnetic force microscopy results further confirm the occurrence of current assisted domain wall depinning. Data bits are therefore shifted along the nanowire by sequentially pinning and depinning a domain wall between successive interfaces, a requirement necessary for race-track type memory devices. We demonstrate that the direction, amplitude and duration of the applied current pulses determine the propagation of the domain wall across pinning sites. These results demonstrate a multi-bit cylindrical nanowire device, utilizing current assisted data manipulation. The prospect of sequential pinning and depinning in these nanowires allows the bit density to increase by several Tbs, depending on the number of segments within these nanowires.

Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications

KAUST Repository

Mohammed, Hanan; Corte-Leó n, Hector; Ivanov, Yurii P.; Lopatin, Sergei; Moreno, Julian A.; Chuvilin, Andrey; Salimath, Akshaykumar; Manchon, Aurelien; Kazakova, Olga; Kosel, Jü rgen

2018-01-01

A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of cobalt and nickel. The material interfaces acting as domain wall pinning sites, are utilized in combination with current pulses, to control the position of the domain wall, which is monitored using magnetoresistance measurements. Magnetic force microscopy results further confirm the occurrence of current assisted domain wall depinning. Data bits are therefore shifted along the nanowire by sequentially pinning and depinning a domain wall between successive interfaces, a requirement necessary for race-track type memory devices. We demonstrate that the direction, amplitude and duration of the applied current pulses determine the propagation of the domain wall across pinning sites. These results demonstrate a multi-bit cylindrical nanowire device, utilizing current assisted data manipulation. The prospect of sequential pinning and depinning in these nanowires allows the bit density to increase by several Tbs, depending on the number of segments within these nanowires.

Morphology Controlled Fabrication of InN Nanowires on Brass Substrates

Directory of Open Access Journals (Sweden)

Huijie Li

2016-10-01

Full Text Available Growth of semiconductor nanowires on cheap metal substrates could pave the way to the large-scale manufacture of low-cost nanowire-based devices. In this work, we demonstrated that high density InN nanowires can be directly grown on brass substrates by metal-organic chemical vapor deposition. It was found that Zn from the brass substrates is the key factor in the formation of nanowires by restricting the lateral growth of InN. The nanowire morphology is highly dependent on the growth temperature. While at a lower growth temperature, the nanowires and the In droplets have large diameters. At the elevated growth temperature, the lateral sizes of the nanowires and the In droplets are much smaller. Moreover, the nanowire diameter can be controlled in situ by varying the temperature in the growth process. This method is very instructive to the diameter-controlled growth of nanowires of other materials.

Development of individual semiconductor nanowire for bioelectrochemical device at low overpotential conditions

Energy Technology Data Exchange (ETDEWEB)

Crespilho, Frank N.; Lanfredi, Alexandre J.C. [Universidade Federal do ABC (UFABC), Santo Andre 09210-170 (Brazil); Leite, Edson R.; Chiquito, Adenilson J. [Universidade Federal do Sao Carlos (UFSCar), Sao Carlos, SP (Brazil)

2009-09-15

In this work we report the bioelectrochemical study using an individual indium tin oxide (ITO) nanowire (ITO-NW) electrode modified with glucose oxidase enzyme (GOx), in which the enzymatic activity and the biocatalytic activity was evaluated. The main objective is to show that at low overpotential condition, semiconductor NW can be used as an electron donor during biocatalytic process. We demonstrate the possibility of immobilizing an ITO-NW electrode on gold contacts deposited on top of a microchip (oxidized Si wafer). A protective polymer layer containing an aperture over the sample area was photolithographically deposited over the microchip to isolate the metallic contacts. For H{sub 2}O{sub 2} reduction during the biocatalysis at ITO-NWs surface, with {eta} << 50 mV, normal linear behavior is not observed and an exponential current is evident, similar to n-p semiconductor junction behavior. These results can open new tools for studying redox enzymes at the single-molecule level, and the device described here is very promising as a candidate for further exploration in bioelectrochemical devices, such as biofuel cells and biosensors. (author)

SAW Humidity Sensor Sensitivity Enhancement via Electrospraying of Silver Nanowires

Directory of Open Access Journals (Sweden)

Farid Sayar Irani

2016-11-01

Full Text Available In this research, we investigated the influence of the surface coatings of silver nanowires on the sensitivity of surface acoustic wave (SAW humidity sensors. Silver nanowires, with poly(vinylpyrrolidone (PVP, which is a hydrophilic capping agent, were chemically synthesized, with an average length of 15 µm and an average diameter of 60 nm. Humidity sensors, with 433 MHz frequency dual-port resonator Rayleigh-SAW devices, were coated by silver nanowires (AgNWs using the electrospray coating method. It was demonstrated that increasing thickness of coated AgNW on the surfaces of SAW devices results in increased sensitivity. The highest frequency shift (262 kHz in these SAW devices was obtained with an injection of 0.5 mL of the AgNW solution with a concentration of 0.5 mg/mL at an injection rate of 1 mL/h. It also showed the highest humidity sensitivity among the other prepared SAW devices.

Printing-based fabrication method using sacrificial paper substrates for flexible and wearable microfluidic devices

International Nuclear Information System (INIS)

Chung, Daehan; Gray, Bonnie L

2017-01-01

We present a simple, fast, and inexpensive new printing-based fabrication process for flexible and wearable microfluidic channels and devices. Microfluidic devices are fabricated on textiles (fabric) for applications in clothing-based wearable microfluidic sensors and systems. The wearable and flexible microfluidic devices are comprised of water-insoluable screen-printable plastisol polymer. Sheets of paper are used as sacrificial substrates for multiple layers of polymer on the fabric’s surface. Microfluidic devices can be made within a short time using simple processes and inexpensive equipment that includes a laser cutter and a thermal laminator. The fabrication process is characterized to demonstrate control of microfluidic channel thickness and width. Film thickness smaller than 100 micrometers and lateral dimensions smaller than 150 micrometers are demonstrated. A flexible microfluidic mixer is also developed on fabric and successfully tested on both flat and curved surfaces at volumetric flow rates ranging from 5.5–46 ml min −1 . (paper)

Printing-based fabrication method using sacrificial paper substrates for flexible and wearable microfluidic devices

Science.gov (United States)

Chung, Daehan; Gray, Bonnie L.

2017-11-01

We present a simple, fast, and inexpensive new printing-based fabrication process for flexible and wearable microfluidic channels and devices. Microfluidic devices are fabricated on textiles (fabric) for applications in clothing-based wearable microfluidic sensors and systems. The wearable and flexible microfluidic devices are comprised of water-insoluable screen-printable plastisol polymer. Sheets of paper are used as sacrificial substrates for multiple layers of polymer on the fabric’s surface. Microfluidic devices can be made within a short time using simple processes and inexpensive equipment that includes a laser cutter and a thermal laminator. The fabrication process is characterized to demonstrate control of microfluidic channel thickness and width. Film thickness smaller than 100 micrometers and lateral dimensions smaller than 150 micrometers are demonstrated. A flexible microfluidic mixer is also developed on fabric and successfully tested on both flat and curved surfaces at volumetric flow rates ranging from 5.5-46 ml min-1.

Improving Device Efficiencies in Organic Photovoltaics through the Manipulation of Device Architectures and the Development of Low-Bandgap Materials

Science.gov (United States)

Rice, Andrew Hideo

Over the past two decades, vast amounts of research have been conducted in the pursuit of suitable organic semiconductors to replace inorganic materials in electronic applications due to their advantages of being lightweight, flexible, and solution-processible. However, before organic photovoltaics (OPVs) can be truly competitive and commercially viable, their efficiencies must be improved significantly. In this examination, we pursue higher efficiency OPVs in two different ways. Our attempts focus on 1) altering the microstructure of devices to improve charge dissociation, charge transport, and our understanding of how these devices function, and 2) tailoring materials to achieve optimal band gaps and energy levels for use in organic electronics. First, we demonstrate how the vertical morphology of bulk heterojunction (BHJ) solar cells, with an active layer consisting of self-assembled poly(3-hexylthiophene) (P3HT) nanowires and (6,6)-phenyl C61-butyric acid methyl ester (PCBM), can be beneficially influenced. Most device fabrication routes using similar materials employ an annealing step to influence active layer morphology, but this process can create an unfavorable phase migration where P3HT is driven toward the cathode. In contrast, we demonstrate devices that exhibit an increase in relative fullerene concentration at the top of the active layer by introducing the donor phase as a solid nanowire in the active layer solution and altering the pre-spin drying time. X-ray photoelectron spectroscopy (XPS) and conductive and photoconductive atomic force microscopy (cAFM and pcAFM) provide detailed information about how the surface of the active layer can be influenced; this is done by tracking the concentration and alignment of P3HT and PCBM domains. Using this new procedure, devices are made with power conversion efficiencies surpassing 2%. Additionally, we show that nanowires grown in the presence of the fullerene perform differently than those that are grown and

Neuron-inspired flexible memristive device on silicon (100)

KAUST Repository

Ghoneim, Mohamed T.

2017-06-18

Comprehensive understanding of the world\\'s most energy efficient powerful computer, the human brain, is an elusive scientific issue. Still, already gained knowledge indicates memristors can be used as a building block to model the brain. At the same time, brain cortex is folded allowing trillions of neurons to be integrated in a compact volume. Therefore, we report flexible aluminium oxide based memristive devices fabricated and then derived from widely used bulk mono-crystalline silicon (100). We use complementary metal oxide semiconductor based processes to layout the foundation for ultra large scale integration (ULSI) of such memory devices to advance the task of comprehending a physical model of human brain.

High Performance All-solid Supercapacitors Based on the Network of Ultralong Manganese dioxide/Polyaniline Coaxial Nanowires.

Science.gov (United States)

Zhou, Junli; Yu, Lin; Liu, Wei; Zhang, Xiaodan; Mu, Wei; Du, Xu; Zhang, Zhe; Deng, Yulin

2015-12-08

In recent years, thin, lightweight and flexible solid supercapacitors are of considerable interest as energy storage devices. Here we demonstrated all-solid supercapacitors (SSCs) with high electrochemical properties, low self-discharge characteristics based on manganese dioxide/polyaniline (MNW/PANI) coaxial nanowire networks. The synergistic effect of MnO2/PANI plus the unique coaxial nanostructure of the ultralong nanowires with a highly interconnected network effectively enhance the conductivity and capacitive performance of the SSCs device. The MNW/PANI composite with 62.5% MnO2 exhibits an outstanding areal specific capacitance reaching 346 mF/cm(2) at 5 mV s(-1) which is significant higher than most previously reported solid supercapacitors (15.3 mF/cm(2)-109 mF/cm(2)) and is close to the that of the best graphene films solid state supercapacitors (372 mF/cm(2)). In contrast, only 190 mF/cm(2) of areal specific capacitance was obtained for the pure MnO2 NW network. The supercapacitors also exhibited low leakage current as small as 20.1 μA, which demonstrated that the MNW/PANI SSCs have great potential for practical applications.

High Performance All-solid Supercapacitors Based on the Network of Ultralong Manganese dioxide/Polyaniline Coaxial Nanowires

Science.gov (United States)

Zhou, Junli; Yu, Lin; Liu, Wei; Zhang, Xiaodan; Mu, Wei; Du, Xu; Zhang, Zhe; Deng, Yulin

2015-12-01

In recent years, thin, lightweight and flexible solid supercapacitors are of considerable interest as energy storage devices. Here we demonstrated all-solid supercapacitors (SSCs) with high electrochemical properties, low self-discharge characteristics based on manganese dioxide/polyaniline (MNW/PANI) coaxial nanowire networks. The synergistic effect of MnO2/PANI plus the unique coaxial nanostructure of the ultralong nanowires with a highly interconnected network effectively enhance the conductivity and capacitive performance of the SSCs device. The MNW/PANI composite with 62.5% MnO2 exhibits an outstanding areal specific capacitance reaching 346 mF/cm2 at 5 mV s-1 which is significant higher than most previously reported solid supercapacitors (15.3 mF/cm2-109 mF/cm2) and is close to the that of the best graphene films solid state supercapacitors (372 mF/cm2). In contrast, only 190 mF/cm2 of areal specific capacitance was obtained for the pure MnO2 NW network. The supercapacitors also exhibited low leakage current as small as 20.1 μA, which demonstrated that the MNW/PANI SSCs have great potential for practical applications.

Tunneling magnetoresistance in Si nanowires

KAUST Repository

Montes Muñoz, Enrique

2016-11-09

We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green\\'s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

Multi-segmented Magnetic Nanowires Fabrication and Characterization

KAUST Repository

Moreno Garcia, Julian

2016-04-28

In this work, nickel-gold multi-segmented magnetic nanowires were grown by electrodeposition in anodized alumina templates. The templates were fabricated by a two step anodization process of aluminum disks in an aqueous solution of oxalic acid. In this process, ordered pores grew in an alumina oxide layer at the exposed aluminum area. Each disk was electropolished before the anodization process and the features at its surface were characterized to assess the effect on the pore ordering. Nickel Watts and gold cyanide electrolyte baths were prepared to electrodeposit pure nickel and gold in the templates. Both solutions response to a range of externally applied voltages was characterized and a threshold voltage above which deposition occurs is reported. Single nanowires were isolated by chemically dissolving the template and dispersed in ethanol. Devices were fabricated with these isolated nanowires in which gold contacts were deposited to measure the resistance. A current pulse setup was implemented in a magnetoresistance system allowing to send current pulses with amplitude as low as 2nA and 50μs width. Magneto resistance measurement were carried out on the single nanowires devices and the effect of current pulses was studied. It was found that distinct resistance states can be achieved by applying a determined current pulse at a constant applied field and that the initial state can be recovered by removing excess charge from the nanowire. Finally, the effect of annealing the nanowires in an air atmosphere at 150°C for 24 hours is studied showing that the nickel sections oxidize and the gold sections remain unchanged.

Multi-segmented Magnetic Nanowires Fabrication and Characterization

KAUST Repository

Moreno Garcia, Julian

2016-01-01

In this work, nickel-gold multi-segmented magnetic nanowires were grown by electrodeposition in anodized alumina templates. The templates were fabricated by a two step anodization process of aluminum disks in an aqueous solution of oxalic acid. In this process, ordered pores grew in an alumina oxide layer at the exposed aluminum area. Each disk was electropolished before the anodization process and the features at its surface were characterized to assess the effect on the pore ordering. Nickel Watts and gold cyanide electrolyte baths were prepared to electrodeposit pure nickel and gold in the templates. Both solutions response to a range of externally applied voltages was characterized and a threshold voltage above which deposition occurs is reported. Single nanowires were isolated by chemically dissolving the template and dispersed in ethanol. Devices were fabricated with these isolated nanowires in which gold contacts were deposited to measure the resistance. A current pulse setup was implemented in a magnetoresistance system allowing to send current pulses with amplitude as low as 2nA and 50μs width. Magneto resistance measurement were carried out on the single nanowires devices and the effect of current pulses was studied. It was found that distinct resistance states can be achieved by applying a determined current pulse at a constant applied field and that the initial state can be recovered by removing excess charge from the nanowire. Finally, the effect of annealing the nanowires in an air atmosphere at 150°C for 24 hours is studied showing that the nickel sections oxidize and the gold sections remain unchanged.

Assessment on thermoelectric power factor in silicon nanowire networks

Energy Technology Data Exchange (ETDEWEB)

Lohn, Andrew J.; Kobayashi, Nobuhiko P. [Baskin School of Engineering, University of California Santa Cruz, CA (United States); Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California Santa Cruz, NASA Ames Research Center, Moffett Field, CA (United States); Coleman, Elane; Tompa, Gary S. [Structured Materials Industries, Inc., Piscataway, NJ (United States)

2012-01-15

Thermoelectric devices based on three-dimensional networks of highly interconnected silicon nanowires were fabricated and the parameters that contribute to the power factor, namely the Seebeck coefficient and electrical conductivity were assessed. The large area (2 cm x 2 cm) devices were fabricated at low cost utilizing a highly scalable process involving silicon nanowires grown on steel substrates. Temperature dependence of the Seebeck coefficient was found to be weak over the range of 20-80 C at approximately -400 {mu}V/K for unintentionally doped devices and {+-}50 {mu}V/K for p-type and n-type devices, respectively. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Fabrication of ZnO Nanowire Based Piezoelectric Generators and Related Structures

Science.gov (United States)

Opoku, Charles; Dahiya, Abhishek Singh; Oshman, Christopher; Cayrel, Frederic; Poulin-Vittrant, Guylaine; Alquier, Daniel; Camara, Nicolas

Using vertically grown hydrothermal ZnO nanowires, we demonstrate the assembly of fully functional piezoelectric energy harvesters on plastics substrates. A seedless hydrothermal process is employed for the growth of single crystalline vertically orientated ZnO NWs at around 100oC. Flexible NG are assembled using ∼7 μm thick PDMS polymer matrix on a 3x3cm substrate. A representative device with an active area of 4cm2 is characterised revealing average output voltage generation of ∼22mV (±1.2) and -32mV (±0.16) in the positive and negative cycles after 3-4mm periodic deflection at 20Hz. A power density of ∼288nW/cm3 is estimated for the device. It is envisaged that such energy scavengers may find potential applications targeting self-powered systems, sensors and on-body charging of electronics.

Control of the ZnO nanowires nucleation site using microfluidic channels.

Science.gov (United States)

Lee, Sang Hyun; Lee, Hyun Jung; Oh, Dongcheol; Lee, Seog Woo; Goto, Hiroki; Buckmaster, Ryan; Yasukawa, Tomoyuki; Matsue, Tomokazu; Hong, Soon-Ku; Ko, HyunChul; Cho, Meoung-Whan; Yao, Takafumi

2006-03-09

We report on the growth of uniquely shaped ZnO nanowires with high surface area and patterned over large areas by using a poly(dimethylsiloxane) (PDMS) microfluidic channel technique. The synthesis uses first a patterned seed template fabricated by zinc acetate solution flowing though a microfluidic channel and then growth of ZnO nanowire at the seed using thermal chemical vapor deposition on a silicon substrate. Variations the ZnO nanowire by seed pattern formed within the microfluidic channel were also observed for different substrates and concentrations of the zinc acetate solution. The photocurrent properties of the patterned ZnO nanowires with high surface area, due to their unique shape, were also investigated. These specialized shapes and patterning technique increase the possibility of realizing one-dimensional nanostructure devices such as sensors and optoelectric devices.

Substrate-Dependent Differences in the Crystal Structures and Optical Properties of ZnSe Nanowires

Directory of Open Access Journals (Sweden)

Keumyoung Seo

2015-01-01

Full Text Available The optical and structural properties of ZnSe nanowires directly grown on three different substrates, SiO2, ITO, and graphene, were investigated. ZnSe nanowires grown on graphene and SiO2 were found to have cubic structures, while ZnSe nanowires grown on ITO had a mixed cubic and hexagonal structure. The main peaks in the photoluminescence spectra of ZnSe nanowires grown on SiO2, ITO, and graphene were located at 459, 627, and 627/460 nm, respectively. In addition, a field-emission light-emitting device was fabricated using ZnSe nanowires as a phosphor and graphene as an electrode. The device showed a red emission peak with Commission Internationale de L’Eclairage coordinates of (0.621, 0.315.

Vapor Phase Synthesis of Organometal Halide Perovskite Nanowires for Tunable Room-Temperature Nanolasers.

Science.gov (United States)

Xing, Jun; Liu, Xin Feng; Zhang, Qing; Ha, Son Tung; Yuan, Yan Wen; Shen, Chao; Sum, Tze Chien; Xiong, Qihua

2015-07-08

Semiconductor nanowires have received considerable attention in the past decade driven by both unprecedented physics derived from the quantum size effect and strong isotropy and advanced applications as potential building blocks for nanoscale electronics and optoelectronic devices. Recently, organic-inorganic hybrid perovskites have been shown to exhibit high optical absorption coefficient, optimal direct band gap, and long electron/hole diffusion lengths, leading to high-performance photovoltaic devices. Herein, we present the vapor phase synthesis free-standing CH3NH3PbI3, CH3NH3PbBr3, and CH3NH3PbIxCl3(-x) perovskite nanowires with high crystallinity. These rectangular cross-sectional perovskite nanowires have good optical properties and long electron hole diffusion length, which ensure adequate gain and efficient optical feedback. Indeed, we have demonstrated optical-pumped room-temperature CH3NH3PbI3 nanowire lasers with near-infrared wavelength of 777 nm, low threshold of 11 μJ/cm(2), and a quality factor as high as 405. Our research advocates the promise of optoelectronic devices based on organic-inorganic perovskite nanowires.

VLS-grown diffusion doped ZnO nanowires and their luminescence properties

International Nuclear Information System (INIS)

Roy, Pushan Guha; Dutta, Amartya; Das, Arpita; Bhattacharyya, Anirban; Sen, Sayantani; Pramanik, Pallabi

2015-01-01

Zinc Oxide (ZnO) nanowires were deposited by vapor–liquid–solid (VLS) method on to aluminum doped ZnO (AZO) thin films grown by sol-gel technique. For various device applications, current injection into such nanowires is critical. This is expected to be more efficient for ZnO nanowires deposited on to AZO compared to those deposited on to a foreign substrate such as silicon. In this work we compare the morphological and optical properties of nanowires grown on AZO with those grown under similar conditions on silicon (Si) wafers. For nanowires grown on silicon, diameters around 44 nm with heights around 2.2 μm were obtained. For the growth on to AZO, the diameters were around 90 nm while the heights were around 520 nm. Room temperature photoluminescence (RT-PL) measurements show improved near band-edge emission for nanowires grown on to AZO, indicating higher material quality. This is further established by low temperature photoluminescence (LT-PL) measurements where excitonic transitions with width as small as 14 meV have been obtained at 4 K for such structures. Electron energy loss spectroscopy (EELS) studies indicate the presence of Al in the nanowires, indicating a new technique for introduction of dopants into these structures. These results indicate that ZnO nanowires on sol-gel grown AZO thin films show promise in the development of various optoelectronic devices. (paper)

Direct Evidence of Mg Incorporation Pathway in Vapor-Liquid-Solid Grown p-type Nonpolar GaN Nanowires

OpenAIRE

Patsha, Avinash; Amirthapandian, S.; Pandian, Ramanathaswamy; Bera, S.; Bhattacharya, Anirban; Dhara, Sandip

2015-01-01

Doping of III-nitride based compound semiconductor nanowires is still a challenging issue to have a control over the dopant distribution in precise locations of the nanowire optoelectronic devices. Knowledge of the dopant incorporation and its pathways in nanowires for such devices is limited by the growth methods. We report the direct evidence of incorporation pathway for Mg dopants in p-type nonpolar GaN nanowires grown via vapour-liquid-solid (VLS) method in a chemical vapour deposition te...

Nanolithography based contacting method for electrical measurements on single template synthesized nanowires

DEFF Research Database (Denmark)

Fusil, S.; Piraux, L.; Mátéfi-Tempfli, Stefan

2005-01-01

A reliable method enabling electrical measurements on single nanowires prepared by electrodeposition in an alumina template is described. This technique is based on electrically controlled nanoindentation of a thin insulating resist deposited on the top face of the template filled by the nanowires....... We show that this method is very flexible, allowing us to electrically address single nanowires of controlled length down to 100 nm and of desired composition. Using this approach, current densities as large as 10 A cm were successfully injected through a point contact on a single magnetic...

Stable and Controllable Synthesis of Silver Nanowires for Transparent Conducting Film

Science.gov (United States)

Liu, Bitao; Yan, Hengqing; Chen, Shanyong; Guan, Youwei; Wu, Guoguo; Jin, Rong; Li, Lu

2017-03-01

Silver nanowires without particles are synthesized by a solvothermal method at temperature 150 °C. Silver nanowires are prepared via a reducing agent of glycerol and a capping agent of polyvinylpyrrolidone ( M w ≈ 1,300,000). Both of them can improve the purity of the as-prepared silver nanowires. With controllable shapes and sizes, silver nanowires are grown continuously up to 10-20 μm in length with 40-50 nm in diameter. To improve the yield of silver nanowires, the different concentrations of AgNO3 synthesis silver nanowires are discussed. The characterizations of the synthesized silver nanowires are analyzed by UV-visible absorption spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscope (AFM), and silver nanowires are pumped on the cellulose membrane and heated stress on the PET. Then, the cellulose membrane is dissolved by the steam of acetone to prepare flexible transparent conducting thin film, which is detected 89.9 of transmittance and 58 Ω/□. Additionally, there is a close loop connected by the thin film, a blue LED, a pair of batteries, and a number of wires, to determinate directly the film if conductive or not.

Ti/TaN Bilayer for Efficient Injection and Reliable AlGaN Nanowires LEDs

KAUST Repository

Priante, Davide

2018-05-07

Reliable operation of UV AlGaN-based nanowires-LED at high injection current was realized by incorporating a Ti-pre-orienting/TaN-diffusion-barrier bilayer, thus enhancing external quantum efficiency, and resolving the existing device degradation issue in group-III-nanowires-on-silicon devices.

Tunneling magnetoresistance in Si nanowires

KAUST Repository

Montes Muñ oz, Enrique; Rungger, I.; Sanvito, S.; Schwingenschlö gl, Udo

2016-01-01

for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we

Silver nanowire/polymer composite soft conductive film fabricated by large-area compatible coating for flexible pressure sensor array

Science.gov (United States)

Chen, Sujie; Li, Siying; Peng, Sai; Huang, Yukun; Zhao, Jiaqing; Tang, Wei; Guo, Xiaojun

2018-01-01

Soft conductive films composed of a silver nanowire (AgNW) network, a neutral-pH PEDOT:PSS over-coating layer and a polydimethylsiloxane (PDMS) elastomer substrate are fabricated by large area compatible coating processes. The neutral-pH PEDOT:PSS layer is shown to be able to significantly improve the conductivity, stretchability and air stability of the conductive films. The soft conductive films are patterned using a simple maskless patterning approach to fabricate an 8 × 8 flexible pressure sensor array. It is shown that such soft conductive films can help to improve the sensitivity and reduce the signal crosstalk over the pressure sensor array. Project supported by the Science and Technology Commission of Shanghai Municipality (No. 16JC1400603).

Flexible hybrid energy cell for simultaneously harvesting thermal, mechanical, and solar energies.

Science.gov (United States)

Yang, Ya; Zhang, Hulin; Zhu, Guang; Lee, Sangmin; Lin, Zong-Hong; Wang, Zhong Lin

2013-01-22

We report the first flexible hybrid energy cell that is capable of simultaneously or individually harvesting thermal, mechanical, and solar energies to power some electronic devices. For having both the pyroelectric and piezoelectric properties, a polarized poly(vinylidene fluoride) (PVDF) film-based nanogenerator (NG) was used to harvest thermal and mechanical energies. Using aligned ZnO nanowire arrays grown on the flexible polyester (PET) substrate, a ZnO-poly(3-hexylthiophene) (P3HT) heterojunction solar cell was designed for harvesting solar energy. By integrating the NGs and the solar cells, a hybrid energy cell was fabricated to simultaneously harvest three different types of energies. With the use of a Li-ion battery as the energy storage, the harvested energy can drive four red light-emitting diodes (LEDs).

Potential of silicon nanowires structures as nanoscale piezoresistors in mechanical sensors

International Nuclear Information System (INIS)

Messina, M; Njuguna, J

2012-01-01

This paper presents the design of a single square millimeter 3-axial accelerometer for bio-mechanics measurements that exploit the potential of silicon nanowires structures as nanoscale piezoresistors. The main requirements of this application are miniaturization and high measurement accuracy. Nanowires as nanoscale piezoresistive devices have been chosen as sensing element, due to their high sensitivity and miniaturization achievable. By exploiting the electro-mechanical features of nanowires as nanoscale piezoresistors, the nominal sensor sensitivity is overall boosted by more than 30 times. This approach allows significant higher accuracy and resolution with smaller sensing element in comparison with conventional devices without the need of signal amplification.

Construction of 3D Metallic Nanowire Arrays on Arbitrarily-Shaped Substrate.

Science.gov (United States)

Chen, Fei; Li, Jingning; Yu, Fangfang; Peng, Ru-Wen; Wang, Mu; Mu Wang Team

Formation of three-dimensional (3D) nanostructures is an important step of advanced manufacture for new concept devices with novel functionality. Despite of great achievements in fabricating nanostructures with state of the art lithography approaches, these nanostructures are normally limited on flat substrates. Up to now it remains challenging to build metallic nanostructures directly on a rough and bumpy surface. Here we demonstrate a unique approach to fabricate metallic nanowire arrays on an arbitrarily-shaped surface by electrodeposition, which is unknown before 2016. Counterintuitively here the growth direction of the nanowires is perpendicular to their longitudinal axis, and the specific geometry of nanowires can be achieved by introducing specially designed shaped substrate. The spatial separation and the width of the nanowires can be tuned by voltage, electrolyte concentration and temperature in electrodeposition. By taking cobalt nanowire array as an example, we demonstrate that head-to-head and tail-to-tail magnetic domain walls can be easily introduced and modulated in the nanowire arrays, which is enlightening to construct new devices such as domain wall racetrack memory. We acknowledge the foundation from MOST and NSF(China).

Axial Ge/Si nanowire heterostructure tunnel FETs

Energy Technology Data Exchange (ETDEWEB)

Picraux, Sanuel T [Los Alamos National Laboratory; Daych, Shadi A [Los Alamos National Laboratory

2010-01-01

The vapor-liquid-solid (VLS) growth of semiconductor nanowires allows doping and composition modulation along their axis and the realization of axial 1 D heterostructures. This provides additional flexibility in energy band-edge engineering along the transport direction which is difficult to attain by planar materials growth and processing techniques. We report here on the design, growth, fabrication, and characterization of asymmetric heterostructure tunnel field-effect transistors (HTFETs) based on 100% compositionally modulated Si/Ge axial NWs for high on-current operation and low ambipolar transport behavior. We discuss the optimization of band-offsets and Schottky barrier heights for high performance HTFETs and issues surrounding their experimental realization. Our HTFET devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a measured current drive exceeding 100 {mu}A/{mu}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios.

Simulation study of dielectrophoretic assembly of nanowire between electrode pairs

Energy Technology Data Exchange (ETDEWEB)

Tao, Quan, E-mail: taq3@pitt.edu; Lan, Fei; Jiang, Minlin [University of Pittsburgh, The Department of Electrical and Computer Engineering (United States); Wei, Fanan [Chinese Academy of Sciences, State Key Laboratory of Robotics, Shenyang Institute of Automation (China); Li, Guangyong, E-mail: gul6@pitt.edu [University of Pittsburgh, The Department of Electrical and Computer Engineering (United States)

2015-07-15

Dielectrophoresis (DEP) of rod-shaped nanostructures is attractive because of its exceptional capability to fabricate nanowire-based electronic devices. This efficient manipulation method, however, has a common side effect of assembling a certain number of nanowires at undesired positions. It is therefore essential to understand the underlying physics of DEP of nanowires in order to better guide the assembly. In this work, we propose theoretical methods to characterize the dielectrophoretic force and torque as well as the hydrodynamic drag force and torque on the nanowire (typical length: 10 μm). The trajectory of the nanowire is then simulated based on rigid body dynamics. The nanowire is predicted to either bridge the electrodes or attach on the surface of one electrode. A neighborhood in which the nanowire is more likely to bridge electrodes is found, which is conducive to successful assembly. The simulation study in this work provides us not only a better understanding of the underlying physics but also practical guidance on nanowire assembly by DEP.

Flexible Bragg reflection waveguide devices fabricated on a plastic substrate

Science.gov (United States)

Kim, Kyung-Jo; Yi, Jeong-Ah; Oh, Min-Cheol; Noh, Young-Ouk; Lee, Hyung-Jong

2007-09-01

Bragg reflecting waveguide devices are fabricated on a flexible substrate by using a post lift-off process in order to provide highly uniform grating patterns on a wide range. In this process, the flexible substrate spin-coated on silicon wafer is released after the final fabrication process of chip dicing. The fabricated flexible Bragg reflector shows very sharp transmission spectrum with 3-dB bandwidth of 0.1 nm and 10-dB bandwidth of 0.4 nm, which proves the Bragg reflector has excellent uniformity. To achieve athermal operation of the flexible Bragg reflector, thermal expansion property of the plastic substrate is controlled by the thickness of two polymer materials constructing the plastic substrate. The flexible substrate with 0.7-μm SU-8 layers sandwiching 100-μm NOA61 layer provides an optimized thermal expansion property to compensate the thermo-optic effect of the waveguide made of ZPU polymer. The temperature dependence of the Bragg reflector is decreased to -0.011 nm/°C through the incorporation of the plastic substrate.

InGaN/GaN Nanowire LEDs and Lasers

KAUST Repository

Zhao, Chao

2016-01-01

The large specific surface, and the associated high density of surface states was found to limit the light output power and quantum efficiency of nanowire-array devices, despite their potential for addressing the “green-gap” and efficiency-droop issues. The phonon and carrier confinement in nanowires also led to junction heating, and reduced heat dissipation. In this paper, we will present our studies on effective surface states passivation in InGaN/GaN quantum-disks (Qdisks)-in-nanowire light-emitting diodes (LEDs) and lasers grown on silicon (Si), as well as our recent work on nanowires LEDs grown on bulk-metal, a non-conventional substrate.

Flexible GaN for High Performance, Strainable Radio Frequency Devices (Postprint)

Science.gov (United States)

2017-11-02

wireless systems where consumers will benefit significantly from the high power densities achievable in GaN devices.[8] Further complicating the...future strainable and conformal devices for transmission of radio-frequency (RF) signals over large distances for more efficient wireless communication... power density of traditional RF amplifier materials at different frequencies and wireless generation bands, as well as an image of the flexible GaN

Improved Flexible Transparent Conductive Electrodes based on Silver Nanowire Networks by a Simple Sunlight Illumination Approach

Science.gov (United States)

Kou, Pengfei; Yang, Liu; Chang, Cheng; He, Sailing

2017-01-01

Silver nanowire (Ag NW) networks have attracted wide attention as transparent electrodes for emerging flexible optoelectronics. However, the sheet resistance is greatly limited by large wire-to-wire contact resistances. Here, we propose a simple sunlight illumination approach to remarkably improve their electrical conductivity without any significant degradation of the light transmittance. Because the power density is extremely low (0.1 W/cm2, 1-Sun), only slight welding between Ag NWs has been observed. Despite this, a sheet resistance of solar concentrations. Due to the reduced resistance, high-performance transparent film heaters as well as efficient defrosters have been demonstrated, which are superior to the previously-reported Ag NW based film heaters. Since the sunlight is environmentally friendly and easily available, sophisticated or expensive facilities are not necessary. Our findings are particularly meaningful and show enormous potential for outdoor applications. PMID:28169343

Engineering Silver Nanowire Networks: From Transparent Electrodes to Resistive Switching Devices.

Science.gov (United States)

Du, Haiwei; Wan, Tao; Qu, Bo; Cao, Fuyang; Lin, Qianru; Chen, Nan; Lin, Xi; Chu, Dewei

2017-06-21

Metal nanowires (NWs) networks with high conductance have shown potential applications in modern electronic components, especially the transparent electrodes over the past decade. In metal NW networks, the electrical connectivity of nanoscale NW junction can be modulated for various applications. In this work, silver nanowire (Ag NW) networks were selected to achieve the desired functions. The Ag NWs were first synthesized by a classic polyol process, and spin-coated on glass to fabricate transparent electrodes. The as-fabricated electrode showed a sheet resistance of 7.158 Ω □ -1 with an optical transmittance of 79.19% at 550 nm, indicating a comparable figure of merit (FOM, or Φ TC ) (13.55 × 10 -3 Ω -1 ). Then, two different post-treatments were designed to tune the Ag NWs for not only transparent electrode but also for threshold resistive switching (RS) application. On the one hand, the Ag NW film was mechanically pressed to significantly improve the conductance by reducing the junction resistance. On the other hand, an Ag@AgO x core-shell structure was deliberately designed by partial oxidation of Ag NWs through simple ultraviolet (UV)-ozone treatment. The Ag core can act as metallic interconnect and the insulating AgO x shell acts as a switching medium to provide a conductive pathway for Ag filament migration. By fabricating Ag/Ag@AgO x /Ag planar structure, a volatile threshold switching characteristic was observed and an on/off ratio of ∼100 was achieved. This work showed that through different post-treatments, Ag NW network can be engineered for diverse functions, transforming from transparent electrodes to RS devices.

Charge pumping in InAs nanowires by surface acoustic waves

NARCIS (Netherlands)

Roddaro, Stefano; Strambini, Elia; Romeo, Lorenzo; Piazza, Vincenzo; Nilsson, Kristian; Samuelson, Lars; Beltram, Fabio

2010-01-01

We investigate the interaction between surface acoustic waves on a piezoelectric LiNbO3 substrate and charge carriers in InAs nanowire transistors. Interdigital transducers are used to excite electromechanical waves on the chip surface and their influence on the transport in the nanowire devices is

Low-cost rapid prototyping of flexible plastic paper based microfluidic devices

KAUST Repository

Fan, Yiqiang; Li, Huawei; Yi, Ying; Foulds, Ian G.

2013-01-01

This research presents a novel rapid prototyping method for paper-based flexible microfluidic devices. The microchannels were fabricated using laser ablation on a piece of plastic paper (permanent paper), the dimensions of the microchannels

High performance flexible electronics for biomedical devices.

Science.gov (United States)

Salvatore, Giovanni A; Munzenrieder, Niko; Zysset, Christoph; Kinkeldei, Thomas; Petti, Luisa; Troster, Gerhard

2014-01-01

Plastic electronics is soft, deformable and lightweight and it is suitable for the realization of devices which can form an intimate interface with the body, be implanted or integrated into textile for wearable and biomedical applications. Here, we present flexible electronics based on amorphous oxide semiconductors (a-IGZO) whose performance can achieve MHz frequency even when bent around hair. We developed an assembly technique to integrate complex electronic functionalities into textile while preserving the softness of the garment. All this and further developments can open up new opportunities in health monitoring, biotechnology and telemedicine.

Synthesis, property and field-emission behaviour of amorphous polypyrrole nanowires

International Nuclear Information System (INIS)

Yan Hongliang; Zhang Lan; Shen Jiaoyan; Chen Zhaojia; Shi Gaoquan; Zhang Binglin

2006-01-01

Polypyrrole nanowires have been electrosynthesized by direct oxidation of 0.1 mol l -1 pyrrole in a medium of 75% isopropyl alcohol + 20% boron trifluoride diethyl etherate + 5% poly (ethylene glycol) (by volume) using porous alumina membranes as the templates. The as-prepared nanowires had a smooth surface and uniform diameter and were arranged in an orderly manner in a high density. The conductivity of a single nanowire was measured by the four-electrode technique to be 23.4 S cm -1 at room temperature. The field emission devices based on the nanowire array were fabricated and their operations were explored. The experimental results indicated that the field emission characteristics of the devices fitted well to the Fowler-Nordheim model of emission. The turn-on electric field was only 1.2 V μm -1 and the current density reached 200 μA cm -2 at 2.6 V μm -1

Optoelectronic properties of p-diamond/n-GaN nanowire heterojunctions

International Nuclear Information System (INIS)

Schuster, Fabian; Hetzl, Martin; Weiszer, Saskia; Garrido, Jose A.; Stutzmann, Martin; Wolfer, Marco; Nebel, Christoph E.; Kato, Hiromitsu

2015-01-01

In this work, nanodiodes comprised of n-GaN nanowires on p-diamond substrates are investigated. The electric transport properties are discussed on the basis of simulations and determined experimentally for individual p-diamond/n-GaN nanodiodes by applying conductive atomic force microscopy. For low doping concentrations, a high rectification ratio is observed. The fabrication of a prototype nanoLED device on the basis of ensemble nanowire contacts is presented, showing simultaneous electroluminescence in the UV and the green spectral range which can be ascribed to hole injection into the n-GaN nanowires and electron injection into the p-diamond, respectively. In addition, the operation and heat distribution of the nanoLED device are visualized by active thermographic imaging

Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires

Science.gov (United States)

Giraud, Paul; Hou, Bo; Pak, Sangyeon; Inn Sohn, Jung; Morris, Stephen; Cha, SeungNam; Kim, Jong Min

2018-02-01

We demonstrate the fabrication of solution processed highly crystalline p-type PbS nanowires via the oriented attachment of nanoparticles. The analysis of single nanowire field effect transistor (FET) devices revealed a hole conduction behaviour with average mobilities greater than 30 cm2 V-1 s-1, which is an order of magnitude higher than that reported to date for p-type PbS colloidal nanowires. We have investigated the response of the FETs to near-infrared light excitation and show herein that the nanowires exhibited gate-dependent photo-conductivities, enabling us to tune the device performances. The responsivity was found to be greater than 104 A W-1 together with a detectivity of 1013 Jones, which benefits from a photogating effect occurring at negative gate voltages. These encouraging detection parameters are accompanied by relatively short switching times of 15 ms at positive gate voltages, resulting from a combination of the standard photoconduction and the high crystallinity of the nanowires. Collectively, these results indicate that solution-processed PbS nanowires are promising nanomaterials for infrared photodetectors as well as p-type nanowire FETs.

Planar silver nanowire, carbon nanotube and PEDOT:PSS nanocomposite transparent electrodes

Science.gov (United States)

Stapleton, Andrew J.; Yambem, Soniya D.; Johns, Ashley H.; Afre, Rakesh A.; Ellis, Amanda V.; Shapter, Joe G.; Andersson, Gunther G.; Quinton, Jamie S.; Burn, Paul L.; Meredith, Paul; Lewis, David A.

2015-04-01

Highly conductive, transparent and flexible planar electrodes were fabricated using interwoven silver nanowires and single-walled carbon nanotubes (AgNW:SWCNT) in a PEDOT:PSS matrix via an epoxy transfer method from a silicon template. The planar electrodes achieved a sheet resistance of 6.6 ± 0.0 Ω/□ and an average transmission of 86% between 400 and 800 nm. A high figure of merit of 367 Ω-1 is reported for the electrodes, which is much higher than that measured for indium tin oxide and reported for other AgNW composites. The AgNW:SWCNT:PEDOT:PSS electrode was used to fabricate low temperature (annealing free) devices demonstrating their potential to function with a range of organic semiconducting polymer:fullerene bulk heterojunction blend systems.

Solution-processed flexible NiO resistive random access memory device

Science.gov (United States)

Kim, Soo-Jung; Lee, Heon; Hong, Sung-Hoon

2018-04-01

Non-volatile memories (NVMs) using nanocrystals (NCs) as active materials can be applied to soft electronic devices requiring a low-temperature process because NCs do not require a heat treatment process for crystallization. In addition, memory devices can be implemented simply by using a patterning technique using a solution process. In this study, a flexible NiO ReRAM device was fabricated using a simple NC patterning method that controls the capillary force and dewetting of a NiO NC solution at low temperature. The switching behavior of a NiO NC based memory was clearly observed by conductive atomic force microscopy (c-AFM).

Nano devices and sensors

CERN Document Server

Liaw, Shien-Kuei; Chung, Yung-Hui

2016-01-01

This volume on semiconductor devices focuses on such topics as nano-imprinting, lithography, nanowire charge-trapping, thermo-stability in nanowires, nano-electrodes, and voltage and materials used for fabricating and improving electrical characteristics of nano-materials.

Study of the thermal conductivity of ZnO nanowires/PMMA composites

International Nuclear Information System (INIS)

Igamberdiev, Kh. T.; Yuldashev, Sh. U.; Cho, H. D.; Kang, T. W.; Rakhimova, Sh. M.; Akhmedov, T. Kh.

2012-01-01

From thermal conductivity measurements on ZnO nanowires (NWs)/poly(methyl methacrylate) PMMA composites, the thermal conductivities of the ZnO nanowires were determined. The thermal conductivity of a ZnO NW decreases considerably with decreasing nanowire diameter, and for a ZnO nanowire with a diameter of 250 nm, the thermal conductivity at room temperature is approximately two times lower than that of bulk ZnO at the same temperature. The results of this study show that the thermal conductivity of a ZnO NW is mainly determined by increased phonon-surface boundary scattering. These results could be useful for the design of ZnO-nanowire-based devices.

Biotemplated synthesis of PZT nanowires.

Science.gov (United States)

Cung, Kellye; Han, Booyeon J; Nguyen, Thanh D; Mao, Sheng; Yeh, Yao-Wen; Xu, Shiyou; Naik, Rajesh R; Poirier, Gerald; Yao, Nan; Purohit, Prashant K; McAlpine, Michael C

2013-01-01

Piezoelectric nanowires are an important class of smart materials for next-generation applications including energy harvesting, robotic actuation, and bioMEMS. Lead zirconate titanate (PZT), in particular, has attracted significant attention, owing to its superior electromechanical conversion performance. Yet, the ability to synthesize crystalline PZT nanowires with well-controlled properties remains a challenge. Applications of common nanosynthesis methods to PZT are hampered by issues such as slow kinetics, lack of suitable catalysts, and harsh reaction conditions. Here we report a versatile biomimetic method, in which biotemplates are used to define PZT nanostructures, allowing for rational control over composition and crystallinity. Specifically, stoichiometric PZT nanowires were synthesized using both polysaccharide (alginate) and bacteriophage templates. The wires possessed measured piezoelectric constants of up to 132 pm/V after poling, among the highest reported for PZT nanomaterials. Further, integrated devices can generate up to 0.820 μW/cm(2) of power. These results suggest that biotemplated piezoelectric nanowires are attractive candidates for stimuli-responsive nanosensors, adaptive nanoactuators, and nanoscale energy harvesters.

Microwave dynamics of high aspect ratio superconducting nanowires studied using self-resonance

Science.gov (United States)

Santavicca, Daniel F.; Adams, Jesse K.; Grant, Lierd E.; McCaughan, Adam N.; Berggren, Karl K.

2016-06-01

We study the microwave impedance of extremely high aspect ratio (length/width ≈ 5000) superconducting niobium nitride nanowires. The nanowires are fabricated in a compact meander geometry that is in series with the center conductor of a 50 Ω coplanar waveguide transmission line. The transmission coefficient of the sample is measured up to 20 GHz. At high frequency, a peak in the transmission coefficient is seen. Numerical simulations show that this is a half-wave resonance along the length of the nanowire, where the nanowire acts as a high impedance, slow wave transmission line. This resonance sets the upper frequency limit for these nanowires as inductive elements. Fitting simulations to the measured resonance enables a precise determination of the nanowire's complex sheet impedance at the resonance frequency. The real part is a measure of dissipation, while the imaginary part is dominated by kinetic inductance. We characterize the dependence of the sheet resistance and sheet inductance on both temperature and current and compare the results to recent theoretical predictions for disordered superconductors. These results can aid in the understanding of high frequency devices based on superconducting nanowires. They may also lead to the development of novel superconducting devices such as ultra-compact resonators and slow-wave structures.

Large scale, highly conductive and patterned transparent films of silver nanowires on arbitrary substrates and their application in touch screens

International Nuclear Information System (INIS)

Madaria, Anuj R; Kumar, Akshay; Zhou Chongwu

2011-01-01

The application of silver nanowire films as transparent conductive electrodes has shown promising results recently. In this paper, we demonstrate the application of a simple spray coating technique to obtain large scale, highly uniform and conductive silver nanowire films on arbitrary substrates. We also integrated a polydimethylsiloxane (PDMS)-assisted contact transfer technique with spray coating, which allowed us to obtain large scale high quality patterned films of silver nanowires. The transparency and conductivity of the films was controlled by the volume of the dispersion used in spraying and the substrate area. We note that the optoelectrical property, σ DC /σ Op , for various films fabricated was in the range 75-350, which is extremely high for transparent thin film compared to other candidate alternatives to doped metal oxide film. Using this method, we obtain silver nanowire films on a flexible polyethylene terephthalate (PET) substrate with a transparency of 85% and sheet resistance of 33 Ω/sq, which is comparable to that of tin-doped indium oxide (ITO) on flexible substrates. In-depth analysis of the film shows a high performance using another commonly used figure-of-merit, Φ TE . Also, Ag nanowire film/PET shows good mechanical flexibility and the application of such a conductive silver nanowire film as an electrode in a touch panel has been demonstrated.

Large scale, highly conductive and patterned transparent films of silver nanowires on arbitrary substrates and their application in touch screens.

Science.gov (United States)

Madaria, Anuj R; Kumar, Akshay; Zhou, Chongwu

2011-06-17

The application of silver nanowire films as transparent conductive electrodes has shown promising results recently. In this paper, we demonstrate the application of a simple spray coating technique to obtain large scale, highly uniform and conductive silver nanowire films on arbitrary substrates. We also integrated a polydimethylsiloxane (PDMS)-assisted contact transfer technique with spray coating, which allowed us to obtain large scale high quality patterned films of silver nanowires. The transparency and conductivity of the films was controlled by the volume of the dispersion used in spraying and the substrate area. We note that the optoelectrical property, σ(DC)/σ(Op), for various films fabricated was in the range 75-350, which is extremely high for transparent thin film compared to other candidate alternatives to doped metal oxide film. Using this method, we obtain silver nanowire films on a flexible polyethylene terephthalate (PET) substrate with a transparency of 85% and sheet resistance of 33 Ω/sq, which is comparable to that of tin-doped indium oxide (ITO) on flexible substrates. In-depth analysis of the film shows a high performance using another commonly used figure-of-merit, Φ(TE). Also, Ag nanowire film/PET shows good mechanical flexibility and the application of such a conductive silver nanowire film as an electrode in a touch panel has been demonstrated.

Ferromagnetism in Cr-doped passivated AlN nanowires

KAUST Repository

Kanoun, Mohammed; Goumri-Said, Souraya; Schwingenschlö gl, Udo

2014-01-01

We apply first principles calculations to predict the effect of Cr doping on the electronic and magnetic properties of passivated AlN nanowires. We compare the energetics of the possible dopant sites and demonstrate the favorable configuration ferromagnetic ordering. The charge density of the pristine passivated AlN nanowires is used to elucidate the bonding character. Spin density maps demonstrate an induced spin polarization for N atoms next to dopant atoms, though most of the magnetism is carried by the Cr atoms. Cr-doped AlN nanowires turn out to be interesting for spintronic devices. © 2014 the Partner Organisations.

Nanomanipulation and nanofabrication with multi-probe scanning tunneling microscope: from individual atoms to nanowires.

Science.gov (United States)

Qin, Shengyong; Kim, Tae-Hwan; Wang, Zhouhang; Li, An-Ping

2012-06-01

The wide variety of nanoscale structures and devices demands novel tools for handling, assembly, and fabrication at nanoscopic positioning precision. The manipulation tools should allow for in situ characterization and testing of fundamental building blocks, such as nanotubes and nanowires, as they are built into functional devices. In this paper, a bottom-up technique for nanomanipulation and nanofabrication is reported by using a 4-probe scanning tunneling microscope (STM) combined with a scanning electron microscope (SEM). The applications of this technique are demonstrated in a variety of nanosystems, from manipulating individual atoms to bending, cutting, breaking carbon nanofibers, and constructing nanodevices for electrical characterizations. The combination of the wide field of view of SEM, the atomic position resolution of STM, and the flexibility of multiple scanning probes is expected to be a valuable tool for rapid prototyping in the nanoscience and nanotechnology.

Flexible InGaN nanowire membranes for enhanced solar water splitting

KAUST Repository

Elafandy, Rami T.; Elafandy, Rami T.; Min, Jung-Wook; Zhao, Chao; Ng, Tien Khee; Ooi, Boon S.

2018-01-01

III-Nitride nanowires (NWs) have recently emerged as potential photoelectrodes for efficient solar hydrogen generation. While InGaN NWs epitaxy over silicon is required for high crystalline quality and economic production, it leads to the formation

Homojunction p-n photodiodes based on As-doped single ZnO nanowire

International Nuclear Information System (INIS)

Cho, H. D.; Zakirov, A. S.; Yuldashev, Sh. U.; Kang, T. W.; Ahn, C. W.; Yeo, Y. K.

2013-01-01

Photovoltaic device was successfully grown solely based on the single ZnO p-n homojunction nanowire. The ZnO nanowire p-n diode consists of an as-grown n-type segment and an in-situ arsenic doped p-type segment. This p-n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased condition. Our results demonstrate that present ZnO p-n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nano-scale electronic, optoelectronic, and medical devices

Vanadium oxide nanowire-carbon nanotube binder-free flexible electrodes for supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Perera, Sanjaya D.; Patel, Bijal; Seitz, Oliver; Ferraris, John P.; Balkus, Kenneth J. Jr. [Department of Chemistry and the Alan G. MacDiarmid Nanotech Institute, 800 West Campbell Rd, University of Texas at Dallas, Richardson, TX 75080 (United States); Nijem, Nour; Roodenko, Katy; Chabal, Yves J. [Laboratory for Surface and Nanostructure Modification, Department of Material Science and Engineering, 800 West Campbell Rd, University of Texas Dallas, Richardson, TX 75080 (United States)

2011-10-15

Vanadium pentoxide (V{sub 2}O{sub 5}) layered nanostructures are known to have very stable crystal structures and high faradaic activity. The low electronic conductivity of V{sub 2}O{sub 5} greatly limits the application of vanadium oxide as electrode materials and requires combining with conducting materials using binders. It is well known that the organic binders can degrade the overall performance of electrode materials and need carefully controlled compositions. In this study, we develop a simple method for preparing freestanding carbon nanotube (CNT)-V{sub 2}O{sub 5} nanowire (VNW) composite paper electrodes without using binders. Coin cell type (CR2032) supercapacitors are assembled using the nanocomposite paper electrode as the anode and high surface area carbon fiber electrode (Spectracarb 2225) as the cathode. The supercapacitor with CNT-VNW composite paper electrode exhibits a power density of 5.26 kW Kg{sup -1} and an energy density of 46.3 Wh Kg{sup -1}. (Li)VNWs and CNT composite paper electrodes can be fabricated in similar manner and show improved overall performance with a power density of 8.32 kW Kg{sup -1} and an energy density of 65.9 Wh Kg{sup -1}. The power and energy density values suggest that such flexible hybrid nanocomposite paper electrodes may be useful for high performance electrochemical supercapacitors. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Gigantic Enhancement in Sensitivity Using Schottky Contacted Nanowire Nanosensor

KAUST Repository

Wei, Te-Yu; Yeh, Ping-Hung; Lu, Shih-Yuan; Wang, Zhong Lin

2009-01-01

A new single nanowire based nanosensor is demonstrated for illustrating its ultrahigh sensitivity for gas sensing. The device is composed of a single ZnO nanowire mounted on Pt electrodes with one end in Ohmic contact and the other end in Schottky contact. The Schottky contact functions as a "gate" that controls the current flowing through the entire system. By tuning the Schottky barrier height through the responsive variation of the surface chemisorbed gases and the amplification role played by the nanowire to Schottky barrier effect, an ultrahigh sensitivity of 32 000% was achieved using the Schottky contacted device operated in reverse bias mode at 275 °C for detection of 400 ppm CO, which is 4 orders of magnitude higher than that obtained using an Ohmic contact device under the same conditions. In addition, the response time and reset time have been shortened by a factor of 7. The methodology and principle illustrated in the paper present a new sensing mechanism that can be readily and extensively applied to other gas sensing systems. © 2009 American Chemical Society.

Gigantic Enhancement in Sensitivity Using Schottky Contacted Nanowire Nanosensor

KAUST Repository

Wei, Te-Yu

2009-12-09

A new single nanowire based nanosensor is demonstrated for illustrating its ultrahigh sensitivity for gas sensing. The device is composed of a single ZnO nanowire mounted on Pt electrodes with one end in Ohmic contact and the other end in Schottky contact. The Schottky contact functions as a "gate" that controls the current flowing through the entire system. By tuning the Schottky barrier height through the responsive variation of the surface chemisorbed gases and the amplification role played by the nanowire to Schottky barrier effect, an ultrahigh sensitivity of 32 000% was achieved using the Schottky contacted device operated in reverse bias mode at 275 °C for detection of 400 ppm CO, which is 4 orders of magnitude higher than that obtained using an Ohmic contact device under the same conditions. In addition, the response time and reset time have been shortened by a factor of 7. The methodology and principle illustrated in the paper present a new sensing mechanism that can be readily and extensively applied to other gas sensing systems. © 2009 American Chemical Society.

Athermal avalanche in bilayer superconducting nanowire single-photon detectors

Energy Technology Data Exchange (ETDEWEB)

Verma, V. B., E-mail: verma@nist.gov; Lita, A. E.; Stevens, M. J.; Mirin, R. P.; Nam, S. W. [National Institute of Standards and Technology, 325 Broadway, Boulder, Colorado 80305 (United States)

2016-03-28

We demonstrate that two superconducting nanowires separated by a thin insulating barrier can undergo an avalanche process. In this process, Joule heating caused by a photodetection event in one nanowire and the associated production of athermal phonons which are transmitted through the barrier cause the transition of the adjacent nanowire from the superconducting to the normal state. We show that this process can be utilized in the fabrication of superconducting nanowire single photon detectors to improve the signal-to-noise ratio, reduce system jitter, maximize device area, and increase the external efficiency over a very broad range of wavelengths. Furthermore, the avalanche mechanism may provide a path towards a superconducting logic element based on athermal gating.

Lead-free LiNbO3 nanowire-based nanocomposite for piezoelectric power generation

Science.gov (United States)

2014-01-01

In a flexible nanocomposite-based nanogenerator, in which piezoelectric nanostructures are mixed with polymers, important parameters to increase the output power include using long nanowires with high piezoelectricity and decreasing the dielectric constant of the nanocomposite. Here, we report on piezoelectric power generation from a lead-free LiNbO3 nanowire-based nanocomposite. Through ion exchange of ultra-long Na2Nb2O6-H2O nanowires, we synthesized long (approximately 50 μm in length) single-crystalline LiNbO3 nanowires having a high piezoelectric coefficient (d33 approximately 25 pmV-1). By blending LiNbO3 nanowires with poly(dimethylsiloxane) (PDMS) polymer (volume ratio 1:100), we fabricated a flexible nanocomposite nanogenerator having a low dielectric constant (approximately 2.7). The nanogenerator generated stable electric power, even under excessive strain conditions (approximately 105 cycles). The different piezoelectric coefficients of d33 and d31 for LiNbO3 may have resulted in generated voltage and current for the e33 geometry that were 20 and 100 times larger than those for the e31 geometry, respectively. This study suggests the importance of the blending ratio and strain geometry for higher output-power generation in a piezoelectric nanocomposite-based nanogenerator. PACS 77.65.-j; 77.84.-s; 73.21.Hb PMID:24386884

Liquid Self-Balancing Device Effects on Flexible Rotor Stability

Directory of Open Access Journals (Sweden)

Leonardo Urbiola-Soto

2013-01-01

Full Text Available Nearly a century ago, the liquid self-balancing device was first introduced by M. LeBlanc for passive balancing of turbine rotors. Although of common use in many types or rotating machines nowadays, little information is available on the unbalance response and stability characteristics of this device. Experimental fluid flow visualization evidences that radial and traverse circulatory waves arise due to the interaction of the fluid backward rotation and the baffle boards within the self-balancer annular cavity. The otherwise destabilizing force induced by trapped fluids in hollow rotors, becomes a stabilizing mechanism when the cavity is equipped with adequate baffle boards. Further experiments using Particle Image Velocimetry (PIV enable to assess the active fluid mass fraction to be one-third of the total fluid mass. An analytical model is introduced to study the effects of the active fluid mass fraction on a flexible rotor supported by flexible supports excited by bwo different destabilizing mechanisms; rotor internal friction damping and aerodynamic cross-coupling. It is found that the fluid radial and traverse forces contribute to the balancing action and to improve the rotor stability, respectively.

Reliability of Single Crystal Silver Nanowire-Based Systems: Stress Assisted Instabilities.

Science.gov (United States)

Ramachandramoorthy, Rajaprakash; Wang, Yanming; Aghaei, Amin; Richter, Gunther; Cai, Wei; Espinosa, Horacio D

2017-05-23

Time-dependent mechanical characterization of nanowires is critical to understand their long-term reliability in applications, such as flexible-electronics and touch screens. It is also of great importance to develop a theoretical framework for experimentation and analysis on the mechanics of nanowires under time-dependent loading conditions, such as stress-relaxation and fatigue. Here, we combine in situ scanning electron microscope (SEM)/transmission electron microscope (TEM) tests with atomistic and phase-field simulations to understand the deformation mechanisms of single crystal silver nanowires held under constant strain. We observe that the nanowires initially undergo stress-relaxation, where the stress reduces with time and saturates after some time period. The stress-relaxation process occurs due to the formation of few dislocations and stacking faults. Remarkably, after a few hours the nanowires rupture suddenly. The reason for this abrupt failure of the nanowire was identified as stress-assisted diffusion, using phase-field simulations. Under a large applied strain, diffusion leads to the amplification of nanowire surface perturbation at long wavelengths and the nanowire fails at the stress-concentrated thin cross-sectional regions. An analytical analysis on the competition between the elastic energy and the surface energy predicts a longer time to failure for thicker nanowires than thinner ones, consistent with our experimental observations. The measured time to failure of nanowires under cyclic loading conditions can also be explained in terms of this mechanism.

High-performance flexible resistive memory devices based on Al2O3:GeOx composite

Science.gov (United States)

Behera, Bhagaban; Maity, Sarmistha; Katiyar, Ajit K.; Das, Samaresh

2018-05-01

In this study a resistive switching random access memory device using Al2O3:GeOx composite thin films on flexible substrate is presented. A bipolar switching characteristic was observed for the co-sputter deposited Al2O3:GeOx composite thin films. Al/Al2O3:GeOx/ITO/PET memory device shows excellent ON/OFF ratio (∼104) and endurance (>500 cycles). GeOx nanocrystals embedded in the Al2O3 matrix have been found to play a significant role in enhancing the switching characteristics by facilitating oxygen vacancy formation. Mechanical endurance was retained even after several bending. The conduction mechanism of the device was qualitatively discussed by considering Ohmic and SCLC conduction. This flexible device is a potential candidate for next-generation electronics device.

Effects of piezoelectric potential on the transport characteristics of metal-ZnO nanowire-metal field effect transistor

KAUST Repository

Gao, Zhiyuan

2009-01-01

We have investigated the effects of piezoelectric potential in a ZnO nanowire on the transport characteristics of the nanowire based field effect transistor through numerical calculations and experimental observations. Under different straining conditions including stretching, compressing, twisting, and their combination, a piezoelectric potential is created throughout the nanowire to modulatealternate the transport property of the metal-ZnO nanowire contacts, resulting in a switch between symmetric and asymmetric contacts at the two ends, or even turning an Ohmic contact type into a diode. The commonly observed natural rectifying behavior of the as-fabricated ZnO nanowire can be attributed to the strain that was unpurposely created in the nanowire during device fabrication and material handling. This work provides further evidence on piezopotential governed electronic transport and devices, e.g., piezotronics.

Flexible barrier film, method of forming same, and organic electronic device including same

Science.gov (United States)

Blizzard, John; Tonge, James Steven; Weidner, William Kenneth

2013-03-26

A flexible barrier film has a thickness of from greater than zero to less than 5,000 nanometers and a water vapor transmission rate of no more than 1.times.10.sup.-2 g/m.sup.2/day at 22.degree. C. and 47% relative humidity. The flexible barrier film is formed from a composition, which comprises a multi-functional acrylate. The composition further comprises the reaction product of an alkoxy-functional organometallic compound and an alkoxy-functional organosilicon compound. A method of forming the flexible barrier film includes the steps of disposing the composition on a substrate and curing the composition to form the flexible barrier film. The flexible barrier film may be utilized in organic electronic devices.

A study of selenium nanoparticles as charge storage element for flexible semi-transparent memory devices

Science.gov (United States)

Alotaibi, Sattam; Nama Manjunatha, Krishna; Paul, Shashi

2017-12-01

Flexible Semi-Transparent electronic memory would be useful in coming years for integrated flexible transparent electronic devices. However, attaining such flexibility and semi-transparency leads to the boundaries in material composition. Thus, impeding processing speed and device performance. In this work, we present the use of inorganic stable selenium nanoparticles (Se-NPs) as a storage element and hydrogenated amorphous carbon (a-C:H) as an insulating layer in two terminal non-volatile physically flexible and semi-transparent capacitive memory devices (2T-NMDs). Furthermore, a-C:H films can be deposited at very low temperature (industrial technique called Plasma Enhanced Chemical Vapour Deposition (PECVD) which is available in many existing fabrication labs. Self-assembled Se-NPs has several unique features including deposition at room temperature by simple vacuum thermal evaporation process without the need for further optimisation. This facilitates the fabrication of memory on a flexible substrate. Moreover, the memory behaviour of the Se-NPs was found to be more distinct than those of the semiconductor and metal nanostructures due to higher work function compared to the commonly used semiconductor and metal species. The memory behaviour was observed from the hysteresis of current-voltage (I-V) measurements while the two distinguishable electrical conductivity states (;0; and "1") were studied by current-time (I-t) measurements.

Two simple examples for the micro-nano integration of nanowires as electronic device elements

International Nuclear Information System (INIS)

Adelung, Rainer

2011-01-01

As a part of the conference talk about the mass fabrication and applications of nanostructures, the aim of this paper is to review and compare two approaches for the simple fabrication and integration and of nanostructures into Si-based microchips. The purpose of the integration is the utilization of the different and advanced electronic properties of nanowires. The first method is based on a fracture approach, that integrates nanowires bound to a Si substrate between micro electrodes. These are arrange in a horizontal manner, the second approach allows to integrate free standing nanowires and even 3 dimensional nanowire networks in the chip. As an example for the electronic properties of the nano-micro integrated structures the UV light sensitivity is sown here.

Nanowire FET Based Neural Element for Robotic Tactile Sensing Skin

Directory of Open Access Journals (Sweden)

William Taube Navaraj

2017-09-01

Full Text Available This paper presents novel Neural Nanowire Field Effect Transistors (υ-NWFETs based hardware-implementable neural network (HNN approach for tactile data processing in electronic skin (e-skin. The viability of Si nanowires (NWs as the active material for υ-NWFETs in HNN is explored through modeling and demonstrated by fabricating the first device. Using υ-NWFETs to realize HNNs is an interesting approach as by printing NWs on large area flexible substrates it will be possible to develop a bendable tactile skin with distributed neural elements (for local data processing, as in biological skin in the backplane. The modeling and simulation of υ-NWFET based devices show that the overlapping areas between individual gates and the floating gate determines the initial synaptic weights of the neural network - thus validating the working of υ-NWFETs as the building block for HNN. The simulation has been further extended to υ-NWFET based circuits and neuronal computation system and this has been validated by interfacing it with a transparent tactile skin prototype (comprising of 6 × 6 ITO based capacitive tactile sensors array integrated on the palm of a 3D printed robotic hand. In this regard, a tactile data coding system is presented to detect touch gesture and the direction of touch. Following these simulation studies, a four-gated υ-NWFET is fabricated with Pt/Ti metal stack for gates, source and drain, Ni floating gate, and Al2O3 high-k dielectric layer. The current-voltage characteristics of fabricated υ-NWFET devices confirm the dependence of turn-off voltages on the (synaptic weight of each gate. The presented υ-NWFET approach is promising for a neuro-robotic tactile sensory system with distributed computing as well as numerous futuristic applications such as prosthetics, and electroceuticals.

High optical and switching performance electrochromic devices based on a zinc oxide nanowire with poly(methyl methacrylate) gel electrolytes

Energy Technology Data Exchange (ETDEWEB)

Chun, Young Tea; Chu, Daping, E-mail: dpc31@cam.ac.uk [Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Neeves, Matthew; Placido, Frank [Thin Film Centre, University of the West of Scotland, Paisley PA1 2BE (United Kingdom); Smithwick, Quinn [Disney Research, 521 Circle Seven Drive, Glendale, Los Angeles, California 91201 (United States)

2014-11-10

High performance electrochromic devices have been fabricated and demonstrated utilizing a solid polymer electrolyte and zinc oxide (ZnO) nanowire (NW) array counter electrode. The poly(methyl methacrylate) based polymer electrolyte was spin coated upon hydrothermally grown ZnO NW array counter electrodes, while electron beam evaporated NiO{sub x} thin films formed the working electrodes. Excellent optical contrast and switching speeds were observed in the fabricated devices with active areas of 2 cm{sup 2}, exhibiting an optical contrast of 73.11% at the wavelength of 470 nm, combined with a fast switching time of 0.2 s and 0.4 s for bleaching and coloration, respectively.

High optical and switching performance electrochromic devices based on a zinc oxide nanowire with poly(methyl methacrylate) gel electrolytes

International Nuclear Information System (INIS)

Chun, Young Tea; Chu, Daping; Neeves, Matthew; Placido, Frank; Smithwick, Quinn

2014-01-01

High performance electrochromic devices have been fabricated and demonstrated utilizing a solid polymer electrolyte and zinc oxide (ZnO) nanowire (NW) array counter electrode. The poly(methyl methacrylate) based polymer electrolyte was spin coated upon hydrothermally grown ZnO NW array counter electrodes, while electron beam evaporated NiO x thin films formed the working electrodes. Excellent optical contrast and switching speeds were observed in the fabricated devices with active areas of 2 cm 2 , exhibiting an optical contrast of 73.11% at the wavelength of 470 nm, combined with a fast switching time of 0.2 s and 0.4 s for bleaching and coloration, respectively

WPG-Controlled Quantum BDD Circuits with BDD Architecture on GaAs-Based Hexagonal Nanowire Network Structure

Directory of Open Access Journals (Sweden)

Hong-Quan ZHao

2012-01-01

Full Text Available One-dimensional nanowire quantum devices and basic quantum logic AND and OR unit on hexagonal nanowire units controlled by wrap gate (WPG were designed and fabricated on GaAs-based one-dimensional electron gas (1-DEG regular nanowire network with hexagonal topology. These basic quantum logic units worked correctly at 35 K, and clear quantum conductance was achieved on the node device, logic AND circuit unit, and logic OR circuit unit. Binary-decision-diagram- (BDD- based arithmetic logic unit (ALU is realized on GaAs-based regular nanowire network with hexagonal topology by the same fabrication method as that of the quantum devices and basic circuits. This BDD-based ALU circuit worked correctly at room temperature. Since these quantum devices and circuits are basic units of the BDD ALU combinational circuit, the possibility of integrating these quantum devices and basic quantum circuits into the BDD-based quantum circuit with more complicated structures was discussed. We are prospecting the realization of quantum BDD combinational circuitries with very small of energy consumption and very high density of integration.

Atmospheric pressure plasmas for surface modification of flexible and printed electronic devices: A review

Energy Technology Data Exchange (ETDEWEB)

Kim, Kyong Nam; Lee, Seung Min; Mishra, Anurag [Department of Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Yeom, Geun Young, E-mail: gyyeom@skku.edu [Department of Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)

2016-01-01

Recently, non-equilibrium atmospheric pressure plasma, especially those operated at low gas temperatures, have become a topic of great interest for the processing of flexible and printed electronic devices due to several benefits such as the reduction of process and reactor costs, the employment of easy-to-handle apparatuses and the easier integration into continuous production lines. In this review, several types of typical atmospheric pressure plasma sources have been addressed, and the processes including surface treatment, texturing and sintering for application to flexible and printed electronic devices have been discussed.

Understanding and removing surface states limiting charge transport in TiO2 nanowire arrays for enhanced optoelectronic device performance.

Science.gov (United States)

Sheng, Xia; Chen, Liping; Xu, Tao; Zhu, Kai; Feng, Xinjian

2016-03-01

Charge transport within electrode materials plays a key role in determining the optoelectronic device performance. Aligned single-crystal TiO 2 nanowire arrays offer an ideal electron transport path and are expected to have higher electron mobility. Unfortunately, their transport is found not to be superior to that in nanoparticle films. Here we show that the low electron transport in rutile TiO 2 nanowires is mainly caused by surface traps in relatively deep energy levels, which cannot be removed by conventional approaches, such as oxygen annealing treatment. Moreover, we demonstrate an effective wet-chemistry approach to minimize these trap states, leading to over 20-fold enhancement in electron diffusion coefficient and 62% improvement in solar cell performance. On the basis of our results, the potential of TiO 2 NWs can be developed and well-utilized, which is significantly important for their practical applications.

Understanding the vapor-liquid-solid growth and composition of ternary III-V nanowires and nanowire heterostructures

Science.gov (United States)

Dubrovskii, V. G.

2017-11-01

Based on the recent achievements in vapor-liquid-solid (VLS) synthesis, characterization and modeling of ternary III-V nanowires and axial heterostructures within such nanowires, we try to understand the major trends in their compositional evolution from a general theoretical perspective. Clearly, the VLS growth of ternary materials is much more complex than in standard vapor-solid epitaxy techniques, and even maintaining the necessary control over the composition of steady-state ternary nanowires is far from straightforward. On the other hand, VLS nanowires offer otherwise unattainable material combinations without introducing structural defects and hence are very promising for next-generation optoelectronic devices, in particular those integrated with a silicon electronic platform. In this review, we consider two main problems. First, we show how and by means of which parameters the steady-state composition of Au-catalyzed or self-catalyzed ternary III-V nanowires can be tuned to a desired value and why it is generally different from the vapor composition. Second, we present some experimental data and modeling results for the interfacial abruptness across axial nanowire heterostructures, both in Au-catalyzed and self-catalyzed VLS growth methods. Refined modeling allows us to formulate some general growth recipes for suppressing the unwanted reservoir effect in the droplet and sharpening the nanowire heterojunctions. We consider and refine two approaches developed to date, namely the regular crystallization model for a liquid alloy with a critical size of only one III-V pair at high supersaturations or classical binary nucleation theory with a macroscopic critical nucleus at modest supersaturations.

Improved efficiency in organic/inorganic hybrid solar cells by interfacial modification of ZnO nanowires with small molecules

International Nuclear Information System (INIS)

Chang, Sehoon; Park, Hyesung; Cheng, Jayce J; Rekemeyer, Paul H; Gradečak, Silvija

2014-01-01

We demonstrate improved photovoltaic performance of ZnO nanowire/poly(3-hexylthiophene) (P3HT) nanofiber hybrid devices using an interfacial modification of ZnO nanowires. Formation of cascade energy levels between the ZnO nanowire and P3HT nanofiber was achieved by interfacial modification of ZnO nanowires using small molecules tetraphenyldibenzoperiflanthene (DBP) and 3,4,9,10-perylenetetracarboxylic bisbenzimidazole (PTCBI). The successful demonstration of improved device performance owing to the cascade energy levels by small molecule modification is a promising approach toward highly efficient organic/inorganic hybrid solar cells. (paper)

Enhanced magnetotransport in nanopatterned manganite nanowires.

Science.gov (United States)

Marín, Lorena; Morellón, Luis; Algarabel, Pedro A; Rodríguez, Luis A; Magén, César; De Teresa, José M; Ibarra, Manuel R

2014-02-12

We have combined optical and focused ion beam lithographies to produce large aspect-ratio (length-to-width >300) single-crystal nanowires of La2/3Ca1/3MnO3 that preserve their functional properties. Remarkably, an enhanced magnetoresistance value of 34% in an applied magnetic field of 0.1 T in the narrowest 150 nm nanowire is obtained. The strain release at the edges together with a destabilization of the insulating regions is proposed to account for this behavior. This opens new strategies to implement these structures in functional spintronic devices.

Electroluminescence from single nanowires by tunnel injection: an experimental study

International Nuclear Information System (INIS)

Zimmler, Mariano A; Bao Jiming; Shalish, Ilan; Yi, Wei; Yoon, Joonah; Narayanamurti, Venkatesh; Capasso, Federico

2007-01-01

We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel injection of holes from the p-type substrate (under forward bias) and from the metal (under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the standard p-n junction model is generally not applicable to this kind of device structure

Manufacturing and testing flexible microfluidic devices with optical and electrical detection mechanisms

OpenAIRE

Ivan, M.G.; Vivet, F.; Meinders, E.R.

2010-01-01

Flexible microfluidic devices made of poly(dimethylsiloxane) (PDMS) were manufactured by soft lithography, and tested in detection of ionic species using optical absorption spectroscopy and electrical measurements. PDMS was chosen due to its flexibility and ease of surface modification by exposure to plasma and UV treatment, its transparency in UV-Vis regions of the light spectrum, and biocompatibility. The dual-detection mechanism allows the user more freedom in choosing the detection tool, ...

Silicon Nanowires for All-Optical Signal Processing in Optical Communication

DEFF Research Database (Denmark)

Pu, Minhao; Hu, Hao; Ji, Hua

2012-01-01

Silicon (Si), the second most abundant element on earth, has dominated in microelectronics for many decades. It can also be used for photonic devices due to its transparency in the range of optical telecom wavelengths which will enable a platform for a monolithic integration of optics...... and microelectronics. Silicon photonic nanowire waveguides fabricated on silicon-on-insulator (SOI) substrates are crucial elements in nano-photonic integrated circuits. The strong light confinement in nanowires induced by high index contrast SOI material enhances the nonlinear effects in the silicon nanowire core...... such as four-wave mixing (FWM) which is an imperative process for optical signal processing. Since the current mature silicon fabrication technology enables a precise dimension control on nanowires, dispersion engineering can be performed by tailoring nanowire dimensions to realize an efficient nonlinear...

Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

Directory of Open Access Journals (Sweden)

Zahra Ostadmahmoodi Do

2016-06-01

Full Text Available Nanowires (NWs are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW, is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method for producing nanowires of the same substrate material. The process conditions are adjusted to find the best quality of Si NWs. Morphology of Si NWs is studied using a field emission scanning electron microscopic technique. An energy dispersive X-Ray analyzer is also used to provide elemental identification and quantitative compositional information. Subsequently, Schottky type solar cell samples are fabricated on Si and Si NWs using ITO and Ag contacts. The junction properties are calculated using I-V curves in dark condition and the solar cell I-V characteristics are obtained under incident of the standardized light of AM1.5. The results for the two mentioned Schottky solar cell samples are compared and discussed. An improvement in short circuit current and efficiency of Schottky solar cell is found when Si nanowires are employed.

Blue electroluminescence nanodevice prototype based on vertical ZnO nanowire/polymer film on silicon substrate

International Nuclear Information System (INIS)

He Ying; Wang Junan; Chen Xiaoban; Zhang Wenfei; Zeng Xuyu; Gu Qiuwen

2010-01-01

We present a polymer-complexing soft template technique to construct the ZnO-nanowire/polymer light emitting device prototype that exhibits blue electrically driven emission with a relatively low-threshold voltage at room temperature in ambient atmosphere, and the ZnO-nanowire-based LED's emission wavelength is easily tuned by controlling the applied-excitation voltage. The nearly vertically aligned ZnO-nanowires with polymer film were used as emissive layers in the devices. The method uses polymer as binder in the LED device and dispersion medium in the luminescence layer, which stabilizes the quasi-arrays of ZnO nanowires embedding in a thin polymer film on silicon substrate and passivates the surface of ZnO nanocrystals, to prevent the quenching of luminescence. Additionally, the measurements of electrical properties showed that ZnO-nanowire/polymer film could significantly improve the conductivity of the film, which could be attributed to an increase in both Hall mobility and carrier concentration. The results indicated that the novel technique is a low-cost process for ZnO-based UV or blue light emission and reduces the requirement for achieving robust p-doping of ZnO film. It suggests that such ZnO-nanowire/polymer-based LEDs will be suitable for the electro-optical application.

Fabrication and Characterization of Magnetic Nanowires in Anodic Alumina

Science.gov (United States)

Xiao, Z. L.; Han, Y. R.; Wang, H. H.; Welp, U.; Kwok, W. K.; Crabtree, G. W.

2002-03-01

Magnetic nanowires (cobalt, iron and nickel) with diameters down to 20 nm have been fabricated by electrodeposition. Both commercial and home-made anodized aluminum oxide (AAO) membranes with nanochannel arrays were used as templates. The structure and magnetization hysteresis of the specimens with nanowires were investigated with scanning electron microscope (SEM) and superconducting quantum interference device (SQUID), respectively. Growth of nanowires with both aqueous and dimethylsulfoxide (DMSO) solutions was conducted and better quality nanowires were obtained with the organic DMSO solution. The influence of the diameter, the length and the separation of the nanochannels on the magnetization orientation was investigated in detail. Work supported by the US Department of Energy (DOE), BES-Materials Science, Contract No. W-31-109-ENG-38.

Synthesis and nanoscale thermal encoding of phase-change nanowires

International Nuclear Information System (INIS)

Sun Xuhui; Yu Bin; Meyyappan, M.

2007-01-01

Low-dimensional phase-change nanostructures provide a valuable research platform for understanding the phase-transition behavior and thermal properties at nanoscale and their potential in achieving superdense data storage. Ge 2 Sb 2 Te 5 nanowires have been grown using a vapor-liquid-solid technique and shown to exhibit distinctive properties that may overcome the present data storage scaling barrier. Local heating of an individual nanowire with a focused electron beam was used to shape a nano-bar-code on a Ge 2 Sb 2 Te 5 nanowire. The data encoding on Ge 2 Sb 2 Te 5 nanowire may promote novel device concepts to implement ultrahigh density, low energy, high speed data storage using phase-change nanomaterials with diverse thermal-programing strategies

Multiple double cross-section transmission electron microscope sample preparation of specific sub-10 nm diameter Si nanowire devices.

Science.gov (United States)

Gignac, Lynne M; Mittal, Surbhi; Bangsaruntip, Sarunya; Cohen, Guy M; Sleight, Jeffrey W

2011-12-01

The ability to prepare multiple cross-section transmission electron microscope (XTEM) samples from one XTEM sample of specific sub-10 nm features was demonstrated. Sub-10 nm diameter Si nanowire (NW) devices were initially cross-sectioned using a dual-beam focused ion beam system in a direction running parallel to the device channel. From this XTEM sample, both low- and high-resolution transmission electron microscope (TEM) images were obtained from six separate, specific site Si NW devices. The XTEM sample was then re-sectioned in four separate locations in a direction perpendicular to the device channel: 90° from the original XTEM sample direction. Three of the four XTEM samples were successfully sectioned in the gate region of the device. From these three samples, low- and high-resolution TEM images of the Si NW were taken and measurements of the NW diameters were obtained. This technique demonstrated the ability to obtain high-resolution TEM images in directions 90° from one another of multiple, specific sub-10 nm features that were spaced 1.1 μm apart.

A universal approach to electrically connecting nanowire arrays using nanoparticles—application to a novel gas sensor architecture

Science.gov (United States)

Parthangal, Prahalad M.; Cavicchi, Richard E.; Zachariah, Michael R.

2006-08-01

We report on a novel, in situ approach toward connecting and electrically contacting vertically aligned nanowire arrays using conductive nanoparticles. The utility of the approach is demonstrated by development of a gas sensing device employing this nano-architecture. Well-aligned, single-crystalline zinc oxide nanowires were grown through a direct thermal evaporation process at 550 °C on gold catalyst layers. Electrical contact to the top of the nanowire array was established by creating a contiguous nanoparticle film through electrostatic attachment of conductive gold nanoparticles exclusively onto the tips of nanowires. A gas sensing device was constructed using such an arrangement and the nanowire assembly was found to be sensitive to both reducing (methanol) and oxidizing (nitrous oxides) gases. This assembly approach is amenable to any nanowire array for which a top contact electrode is needed.

A universal approach to electrically connecting nanowire arrays using nanoparticles-application to a novel gas sensor architecture

International Nuclear Information System (INIS)

Parthangal, Prahalad M; Cavicchi, Richard E; Zachariah, Michael R

2006-01-01

We report on a novel, in situ approach toward connecting and electrically contacting vertically aligned nanowire arrays using conductive nanoparticles. The utility of the approach is demonstrated by development of a gas sensing device employing this nano-architecture. Well-aligned, single-crystalline zinc oxide nanowires were grown through a direct thermal evaporation process at 550 deg. C on gold catalyst layers. Electrical contact to the top of the nanowire array was established by creating a contiguous nanoparticle film through electrostatic attachment of conductive gold nanoparticles exclusively onto the tips of nanowires. A gas sensing device was constructed using such an arrangement and the nanowire assembly was found to be sensitive to both reducing (methanol) and oxidizing (nitrous oxides) gases. This assembly approach is amenable to any nanowire array for which a top contact electrode is needed

Transparent arrays of silver nanowire rings driven by evaporation of sessile droplets

Science.gov (United States)

Wang, Xiaofeng; Kang, Giho; Seong, Baekhoon; Chae, Illkyeong; Teguh Yudistira, Hadi; Lee, Hyungdong; Kim, Hyunggun; Byun, Doyoung

2017-11-01

A coffee-ring pattern can be yielded on the three-phase contact line following evaporation of sessile droplets with suspended insoluble solutes, such as particles, DNA molecules, and mammalian cells. The formation of such coffee-ring, together with their suppression has been applied in printing and coating technologies. We present here an experimental study on the assembly of silver nanowires inside an evaporating droplet of a colloidal suspension. The effects of nanowire length and concentration on coffee-ring formation of the colloidal suspension were investigated. Several sizes of NWs with an aspect ratio between 50 and 1000 were systematically investigated to fabricate coffee-ring patterns. Larger droplets containing shorter nanowires formed clearer ring deposits after evaporation. An order-to-disorder transition of the nanowires’ alignment was found inside the rings. A printing technique with the evaporation process enabled fabrication of arrays of silver nanowire rings. We could manipulate the patterns silver nanowire rings, which might be applied to the transparent and flexible electrode.

Transparent arrays of silver nanowire rings driven by evaporation of sessile droplets

International Nuclear Information System (INIS)

Wang, Xiaofeng; Kang, Giho; Seong, Baekhoon; Chae, Illkyeong; Yudistira, Hadi Teguh; Lee, Hyungdong; Byun, Doyoung; Kim, Hyunggun

2017-01-01

A coffee-ring pattern can be yielded on the three-phase contact line following evaporation of sessile droplets with suspended insoluble solutes, such as particles, DNA molecules, and mammalian cells. The formation of such coffee-ring, together with their suppression has been applied in printing and coating technologies. We present here an experimental study on the assembly of silver nanowires inside an evaporating droplet of a colloidal suspension. The effects of nanowire length and concentration on coffee-ring formation of the colloidal suspension were investigated. Several sizes of NWs with an aspect ratio between 50 and 1000 were systematically investigated to fabricate coffee-ring patterns. Larger droplets containing shorter nanowires formed clearer ring deposits after evaporation. An order-to-disorder transition of the nanowires’ alignment was found inside the rings. A printing technique with the evaporation process enabled fabrication of arrays of silver nanowire rings. We could manipulate the patterns silver nanowire rings, which might be applied to the transparent and flexible electrode. (paper)

Structural Investigations of Nanowires Using X-Ray Diffraction

DEFF Research Database (Denmark)

Stankevic, Tomas

Advancements in growth of the nanowire-based devices opened another dimension of possible structures and material combinations, which nd their applications in a wide variety of elds, including everyday life. Characterization of such devices brings its own challenges and here we show that X-rays oer...

Fabrication of graphene-based flexible devices utilizing a soft lithographic patterning method

International Nuclear Information System (INIS)

Wook Jung, Min; Myung, Sung; Woong Kim, Ki; Song, Wooseok; Suk Lee, Sun; Lim, Jongsun; An, Ki-Seok; Jo, You-Young; Park, Chong-Yun

2014-01-01

There has been considerable interest in soft lithographic patterning processing of large scale graphene sheets due to the low cost and simplicity of the patterning process along with the exceptional electrical or physical properties of graphene. These properties include an extremely high carrier mobility and excellent mechanical strength. Recently, a study has reported that single layer graphene grown via chemical vapor deposition (CVD) was patterned and transferred to a target surface by controlling the surface energy of the polydimethylsiloxane (PDMS) stamp. However, applications are limited because of the challenge of CVD-graphene functionalization for devices such as chemical or bio-sensors. In addition, graphene-based layers patterned with a micron scale width on the surface of biocompatible silk fibroin thin films, which are not suitable for conventional CMOS processes such as the patterning or etching of substrates, have yet to be reported. Herein, we developed a soft lithographic patterning process via surface energy modification for advanced graphene-based flexible devices such as transistors or chemical sensors. Using this approach, the surface of a relief-patterned elastomeric stamp was functionalized with hydrophilic dimethylsulfoxide molecules to enhance the surface energy of the stamp and to remove the graphene-based layer from the initial substrate and transfer it to a target surface. As a proof of concept using this soft lithographic patterning technique, we demonstrated a simple and efficient chemical sensor consisting of reduced graphene oxide and a metallic nanoparticle composite. A flexible graphene-based device on a biocompatible silk fibroin substrate, which is attachable to an arbitrary target surface, was also successfully fabricated. Briefly, a soft lithographic patterning process via surface energy modification was developed for advanced graphene-based flexible devices such as transistors or chemical sensors and attachable devices on a

Fabrication of graphene-based flexible devices utilizing a soft lithographic patterning method

Science.gov (United States)

Jung, Min Wook; Myung, Sung; Kim, Ki Woong; Song, Wooseok; Jo, You-Young; Lee, Sun Suk; Lim, Jongsun; Park, Chong-Yun; An, Ki-Seok

2014-07-01

There has been considerable interest in soft lithographic patterning processing of large scale graphene sheets due to the low cost and simplicity of the patterning process along with the exceptional electrical or physical properties of graphene. These properties include an extremely high carrier mobility and excellent mechanical strength. Recently, a study has reported that single layer graphene grown via chemical vapor deposition (CVD) was patterned and transferred to a target surface by controlling the surface energy of the polydimethylsiloxane (PDMS) stamp. However, applications are limited because of the challenge of CVD-graphene functionalization for devices such as chemical or bio-sensors. In addition, graphene-based layers patterned with a micron scale width on the surface of biocompatible silk fibroin thin films, which are not suitable for conventional CMOS processes such as the patterning or etching of substrates, have yet to be reported. Herein, we developed a soft lithographic patterning process via surface energy modification for advanced graphene-based flexible devices such as transistors or chemical sensors. Using this approach, the surface of a relief-patterned elastomeric stamp was functionalized with hydrophilic dimethylsulfoxide molecules to enhance the surface energy of the stamp and to remove the graphene-based layer from the initial substrate and transfer it to a target surface. As a proof of concept using this soft lithographic patterning technique, we demonstrated a simple and efficient chemical sensor consisting of reduced graphene oxide and a metallic nanoparticle composite. A flexible graphene-based device on a biocompatible silk fibroin substrate, which is attachable to an arbitrary target surface, was also successfully fabricated. Briefly, a soft lithographic patterning process via surface energy modification was developed for advanced graphene-based flexible devices such as transistors or chemical sensors and attachable devices on a

Quantitative measurements of C-reactive protein using silicon nanowire arrays

Directory of Open Access Journals (Sweden)

Min-Ho Lee

2008-03-01

Full Text Available Min-Ho Lee, Kuk-Nyung Lee, Suk-Won Jung, Won-Hyo Kim, Kyu-Sik Shin, Woo-Kyeong SeongKorea Electronics Technology Institute, Gyeonggi, KoreaAbstract: A silicon nanowire-based sensor for biological application showed highly desirable electrical responses to either pH changes or receptor-ligand interactions such as protein disease markers, viruses, and DNA hybridization. Furthermore, because the silicon nanowire can display results in real-time, it may possess superior characteristics for biosensing than those demonstrated in previously studied methods. However, despite its promising potential and advantages, certain process-related limitations of the device, due to its size and material characteristics, need to be addressed. In this article, we suggest possible solutions. We fabricated silicon nanowire using a top-down and low cost micromachining method, and evaluate the sensing of molecules after transfer and surface modifications. Our newly designed method can be used to attach highly ordered nanowires to various substrates, to form a nanowire array device, which needs to follow a series of repetitive steps in conventional fabrication technology based on a vapor-liquid-solid (VLS method. For evaluation, we demonstrated that our newly fabricated silicon nanowire arrays could detect pH changes as well as streptavidin-biotin binding events. As well as the initial proof-of-principle studies, C-reactive protein binding was measured: electrical signals were changed in a linear fashion with the concentration (1 fM to 1 nM in PBS containing 1.37 mM of salts. Finally, to address the effects of Debye length, silicon nanowires coupled with antigen proteins underwent electrical signal changes as the salt concentration changed.Keywords: silicon nanowire array, C-reactive protein, vapor-liquid-solid method

Solution-processed core-shell nanowires for efficient photovoltaic cells.

Science.gov (United States)

Tang, Jinyao; Huo, Ziyang; Brittman, Sarah; Gao, Hanwei; Yang, Peidong

2011-08-21

Semiconductor nanowires are promising for photovoltaic applications, but, so far, nanowire-based solar cells have had lower efficiencies than planar cells made from the same materials, even allowing for the generally lower light absorption of nanowires. It is not clear, therefore, if the benefits of the nanowire structure, including better charge collection and transport and the possibility of enhanced absorption through light trapping, can outweigh the reductions in performance caused by recombination at the surface of the nanowires and at p-n junctions. Here, we fabricate core-shell nanowire solar cells with open-circuit voltage and fill factor values superior to those reported for equivalent planar cells, and an energy conversion efficiency of ∼5.4%, which is comparable to that of equivalent planar cells despite low light absorption levels. The device is made using a low-temperature solution-based cation exchange reaction that creates a heteroepitaxial junction between a single-crystalline CdS core and single-crystalline Cu2S shell. We integrate multiple cells on single nanowires in both series and parallel configurations for high output voltages and currents, respectively. The ability to produce efficient nanowire-based solar cells with a solution-based process and Earth-abundant elements could significantly reduce fabrication costs relative to existing high-temperature bulk material approaches.

Robust mode space approach for atomistic modeling of realistically large nanowire transistors

Science.gov (United States)

Huang, Jun Z.; Ilatikhameneh, Hesameddin; Povolotskyi, Michael; Klimeck, Gerhard

2018-01-01

Nanoelectronic transistors have reached 3D length scales in which the number of atoms is countable. Truly atomistic device representations are needed to capture the essential functionalities of the devices. Atomistic quantum transport simulations of realistically extended devices are, however, computationally very demanding. The widely used mode space (MS) approach can significantly reduce the numerical cost, but a good MS basis is usually very hard to obtain for atomistic full-band models. In this work, a robust and parallel algorithm is developed to optimize the MS basis for atomistic nanowires. This enables engineering-level, reliable tight binding non-equilibrium Green's function simulation of nanowire metal-oxide-semiconductor field-effect transistor (MOSFET) with a realistic cross section of 10 nm × 10 nm using a small computer cluster. This approach is applied to compare the performance of InGaAs and Si nanowire n-type MOSFETs (nMOSFETs) with various channel lengths and cross sections. Simulation results with full-band accuracy indicate that InGaAs nanowire nMOSFETs have no drive current advantage over their Si counterparts for cross sections up to about 10 nm × 10 nm.

Radiation Effects in III-V Nanowire Devices

Science.gov (United States)

2016-09-01

fabrication of an in-plane nanowire (NW) GaAs metal-oxide-semiconductor field- effect transistor (MOSFET) by focused -ion beam (FIB) etching and chemical...8725 John J. Kingman Road, MS 6201 Fort Belvoir, VA 22060-6201 T E C H N IC A L R E P O R T DTRA-TR-16-94 Radiation Effects in III-V...5f. WORK UNIT NUMBER 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) 8. PERFORMING ORGANIZATION REPORT NUMBER 9. SPONSORING / MONITORING AGENCY

Enhancement of thermoelectric figure-of-merit in laterally-coupled nanowire arrays

International Nuclear Information System (INIS)

Zhang, Yiqun; Shi, Yi; Pu, Lin; Wang, Junzhuan; Pan, Lijia; Zheng, Youdou

2011-01-01

A high ZT value is predicted in laterally-coupled nanowire arrays. The quantum confinement and coupling of electrons are considered in the framework of effective-mass envelope-function theory. The boundary scattering on phonons is also taken into account. The thermoelectric properties benefit from the large Seebeck coefficient and dramatically reduced lattice thermal conductivity, as well as the preserved electronic conductivity in the minibands of the coupling nanowires. The enhancement of ZT to more than 10-fold is achieved in the n-type Si nanowires/Ge host material. Results suggest that the laterally-coupled nanowire arrays can be designed for high-performance thermoelectric devices. -- Highlights: → A high ZT value is predicted in the lateral-coupling nanowire arrays. → The lattice thermal conductivity is dramatically reduced in the lateral direction of nanowire arrays. → The electron transport is preserved in the lateral direction due to the coupling effect. → The ZT value is largely enhanced as the nanowire volume fraction exceeds some critical point.

Lateral nanowire/nanobelt based nanogenerators, piezotronics and piezo-phototronics

KAUST Repository

Wang, Zhong Lin

2010-11-01

Relying on the piezopotential created in ZnO under straining, nanogenerators, piezotronics and piezo-phototronics developed based on laterally bonded nanowires on a polymer substrate have been reviewed. The principle of the nanogenerator is a transient flow of electrons in external load as driven by the piezopotential created by dynamic straining. By integrating the contribution made by millions of nanowires, the output voltage has been raised to 1.2 V. Consequently, self-powered nanodevices have been demonstrated. This is an important platform technology for the future sensor network and the internet of things. Alternatively, the piezopotential can act as a gate voltage that can tune/gate the transport process of the charge carriers in the nanowire, which is a gate-electrode free field effect transistor (FET). The device fabricated based on this principle is called the piezotronic device. Piezo-phototronic effect is about the tuning and controlling of electro-optical processes by strain induced piezopotential. The piezotronic, piezophotonic and pieozo-phototronic devices are focused on low frequency applications in areas involving mechanical actions, such as MEMS/NEMS, nanorobotics, sensors, actuators and triggers. © 2010 Elsevier B.V. All rights reserved.