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Sample records for film field emitting

  1. Electromechanical interactions in a carbon nanotube based thin film field emitting diode

    Sinha, N; Mahapatra, D Roy; Sun, Y; Yeow, J T W; Melnik, R V N; Jaffray, D A

    2008-01-01

    Carbon nanotubes (CNTs) have emerged as promising candidates for biomedical x-ray devices and other applications of field emission. CNTs grown/deposited in a thin film are used as cathodes for field emission. In spite of the good performance of such cathodes, the procedure to estimate the device current is not straightforward and the required insight towards design optimization is not well developed. In this paper, we report an analysis aided by a computational model and experiments by which the process of evolution and self-assembly (reorientation) of CNTs is characterized and the device current is estimated. The modeling approach involves two steps: (i) a phenomenological description of the degradation and fragmentation of CNTs and (ii) a mechanics based modeling of electromechanical interaction among CNTs during field emission. A computational scheme is developed by which the states of CNTs are updated in a time incremental manner. Finally, the device current is obtained by using the Fowler-Nordheim equation for field emission and by integrating the current density over computational cells. A detailed analysis of the results reveals the deflected shapes of the CNTs in an ensemble and the extent to which the initial state of geometry and orientation angles affect the device current. Experimental results confirm these effects

  2. Optical modelling of photoluminescence emitted by thin doped films

    Pigeat, P.; Easwarakhanthan, T.; Briancon, J.L.; Rinnert, H.

    2011-01-01

    Photoluminescence (PL) spectra emitted by doped films are deformed owing to film thickness-dependent wave interference. This hampers knowing well their PL generating mechanisms as well as designing photonic devices with suitable geometries that improve their PL efficiency. We develop in this paper an energy model for PL emitted by doped films considering the interaction between the wavelength-differing incident standing and emitted waves, their energy transfer in-between, and the interferences undergone by both. The film optical constants are estimated fitting the model to the measured PL. This simple model has thus allowed us to interpret the evolution of PL emitted by Er-doped AlN films prepared on Si substrates by reactive magnetron sputtering. The shapes, the amplitudes, and the illusive sub-spectral features of the PL spectra depend essentially on the film thickness. The model further predicts high sensitivity for PL emitted by non-homogenously doped stacked-films to incident light wavelengths and film-thickness variations. This property has potential applications in tracking wavelength variations and in measuring physical quantities producing thickness variations. This model may be used to optimise PL efficiency of photonic devices through different film geometries and optical properties.

  3. Nanosecond field emitted and photo-field emitted current pulses from ZrC tips

    Ganter, R.; Bakker, R.J.; Gough, C.; Paraliev, M.; Pedrozzi, M.; Le Pimpec, F.; Rivkin, L.; Wrulich, A.

    2006-01-01

    In order to find electron sources with low thermal emittance, cathodes based on single tip field emitter are investigated. Maximum peak current, measured from single tip in ZrC with a typical apex radius around 1 μm, are presented. Voltage pulses of 2 ns duration and up to 50 kV amplitude lead to field emission current up to 470 mA from one ZrC tip. Combination of high applied electric field with laser illumination gives the possibility to modulate the emission with laser pulses. Nanoseconds current pulses have been emitted with laser pulses at 1064 nm illuminating a ZrC tip under high-DC electric field. The dependence of photo-field emitted current with the applied voltage can be explained by the Schottky effect

  4. Nanosecond field emitted and photo-field emitted current pulses from ZrC tips

    Ganter, R. [Paul Scherrer Institut, Villigen, CH 5232 (Switzerland)]. E-mail: romain.ganter@psi.ch; Bakker, R.J. [Paul Scherrer Institut, Villigen, CH 5232 (Switzerland); Gough, C. [Paul Scherrer Institut, Villigen, CH 5232 (Switzerland); Paraliev, M. [Paul Scherrer Institut, Villigen, CH 5232 (Switzerland); Pedrozzi, M. [Paul Scherrer Institut, Villigen, CH 5232 (Switzerland); Le Pimpec, F. [Paul Scherrer Institut, Villigen, CH 5232 (Switzerland); Rivkin, L. [Paul Scherrer Institut, Villigen, CH 5232 (Switzerland); Wrulich, A. [Paul Scherrer Institut, Villigen, CH 5232 (Switzerland)

    2006-09-15

    In order to find electron sources with low thermal emittance, cathodes based on single tip field emitter are investigated. Maximum peak current, measured from single tip in ZrC with a typical apex radius around 1 {mu}m, are presented. Voltage pulses of 2 ns duration and up to 50 kV amplitude lead to field emission current up to 470 mA from one ZrC tip. Combination of high applied electric field with laser illumination gives the possibility to modulate the emission with laser pulses. Nanoseconds current pulses have been emitted with laser pulses at 1064 nm illuminating a ZrC tip under high-DC electric field. The dependence of photo-field emitted current with the applied voltage can be explained by the Schottky effect.

  5. Nanocrystalline silicon as the light emitting material of a field emission display device

    Biaggi-Labiosa, A; Sola, F; Resto, O; Fonseca, L F; Gonzalez-BerrIos, A; Jesus, J De; Morell, G

    2008-01-01

    A nanocrystalline Si-based paste was successfully tested as the light emitting material in a field emission display test device that employed a film of carbon nanofibers as the electron source. Stable emission in the 550-850 nm range was obtained at 16 V μm -1 . This relatively low field required for intense cathodoluminescence (CL) from the PSi paste may lead to longer term reliability of both the electron emitting and the light emitting materials, and to lower power consumption. Here we describe the synthesis, characterization, and analyses of the light emitting nanostructured Si paste and the electron emitting C nanofibers used for building the device, including x-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy. The corresponding spectra and field emission curves are also shown and discussed

  6. Thin film Encapsulations of Flexible Organic Light Emitting Diodes

    Tsai Fa-Ta

    2016-01-01

    Full Text Available Various encapsulated films for flexible organic light emitting diodes (OLEDs were studied in this work, where gas barrier layers including inorganic Al2O3 thin films prepared by atomic layer deposition, organic Parylene C thin films prepared by chemical vapor deposition, and their combination were considered. The transmittance and water vapor transmission rate of the various organic and inorgabic encapsulated films were tested. The effects of the encapsulated films on the luminance and current density of the OLEDs were discussed, and the life time experiments of the OLEDs with these encapsulated films were also conducted. The results showed that the transmittance are acceptable even the PET substrate were coated two Al2O3 and Parylene C layers. The results also indicated the WVTR of the PET substrate improved by coating the barrier layers. In the encapsulation performance, it indicates the OLED with Al2O3 /PET, 1 pair/PET, and 2 pairs/PET presents similarly higher luminance than the other two cases. Although the 1 pair/PET encapsulation behaves a litter better luminance than the 2 pairs/PET encapsulation, the 2 pairs/PET encapsulation has much better life time. The OLED with 2 pairs/PET encapsulation behaves near double life time to the 1 pair encapsulation, and four times to none encapsulation.

  7. Development of novel UV emitting single crystalline film scintillators

    Zorenko, Yu; Gorbenko, V.; Savchyn, V.; Voznyak, T.; Nikl, M.; Mares, J. A.; Martin, T.; Douissard, P.-A.

    2011-04-01

    The work is dedicated to development of new types of UV -emitting scintillators based on single crystalline films (SCF) of aluminimum perovskites and garnets grown by the liquid phase epitaxy (LPE) method. The development of the following three types of UV SCF scintillators is considered in this work: i) Ce-doped SCF of Y-Lu-Al-perovskites with Ce3+ emission in the 360-370 nm range with a decay time of 16-17 ns; ii) Pr-doped SCF of Y-Lu-Al garnets with Pr3+ emission in the 300-400 nm range with a decay time of 13-17 ns; iii) La3+ and Sc3+ doped SCF of Y-Lu-Al-garnets, emitting in the 290-400 nm range due to formation of the LaY,Lu, ScY,Lu and ScAl centers with decay time of 250-575 ns. The results of testing the several novel UV-emitting SCFs scintillators for visualization of X-ray images at ESFR are presented. It is shown that the UV emission of the LuAG:Sc, LuAG:La and LuAG:Pr SCFs is efficient enough for conversion of X-ray to the UV light and that these scintillators can be used for improvement of the resolution of imaging detectors in synchrotron radiation applications.

  8. Development of novel UV emitting single crystalline film scintillators

    Zorenko, Yu; Gorbenko, V; Savchyn, V; Voznyak, T [Laboratory of Opoelectronic Materials (LOM), Electronics Department of Ivan Franko National University of Lviv, 79017 Lviv (Ukraine); Nikl, M; Mares, J A [Institute of Physics of ASCR, 162 53 Prague (Czech Republic); Martin, T; Douissard, P-A, E-mail: zorenko@electronics.wups.lviv.ua [ESRF, Instrument Support Group, 6 rue Jules Horoeitz, 38043 Grenoble (France)

    2011-04-01

    The work is dedicated to development of new types of UV -emitting scintillators based on single crystalline films (SCF) of aluminium perovskites and garnets grown by the liquid phase epitaxy (LPE) method. The development of the following three types of UV SCF scintillators is considered in this work: i) Ce-doped SCF of Y-Lu-Al-perovskites with Ce{sup 3+} emission in the 360-370 nm range with a decay time of 16-17 ns; ii) Pr-doped SCF of Y-Lu-Al garnets with Pr{sup 3+} emission in the 300-400 nm range with a decay time of 13-17 ns; iii) La{sup 3+} and Sc{sup 3+} doped SCF of Y-Lu-Al-garnets, emitting in the 290-400 nm range due to formation of the La{sub Y,Lu}, Sc{sub Y,Lu} and Sc{sub Al} centers with decay time of 250-575 ns. The results of testing the several novel UV-emitting SCFs scintillators for visualization of X-ray images at ESFR are presented. It is shown that the UV emission of the LuAG:Sc, LuAG:La and LuAG:Pr SCFs is efficient enough for conversion of X-ray to the UV light and that these scintillators can be used for improvement of the resolution of imaging detectors in synchrotron radiation applications.

  9. Field emitted electron trajectories for the CEBAF cavity

    Yunn, B.C.; Sundelin, R.M.

    1993-06-01

    Electromagnetic fields of the superconducting 5-cell CEBAF cavity with its fundamental power coupler are solved numerically with URMEL and MAFIA codes. Trajectories of field emitted electrons following the Fowler-Nordheim relation are studied with a numerical program which accepts the URMEL/MAFIA fields. Emission sites and gradients are determined for those electrons which can reach the cold ceramic window either directly or by an energetic backscattering. The peak and average impact energy and current are found. The generation of dark current by field emitted electrons has also been studied, and its relevance to CEBAF operation is briefly discussed

  10. Field noise near ferromagnetic films

    McMichael, Robert; Liu, Hau-Jian; Yoon, Seungha

    Thermally driven magnetization fluctuations can be viewed as a nuisance noise source or as interesting physics. For example, mag noise in a field sensor may set the minimum detectable field of that sensor. On the other hand, the field noise spectrum reflects the dynamics of the magnetic components, which are essential for device operation. Here, we model the field noise spectrum near the surface of a magnetic film due to thermal spin waves, and we calculate its effect on the T1 relaxation rate of a nearby nitrogen-vacancy (NV) center spin. The model incorporates four components: the spin wave dispersion of the magnetization in a finite-thickness film, thermal excitation of spin waves, the coupling geometry between waves in the film and an external point dipole and finally, the relaxation dynamics of the NV spin. At a distance of 100 nm above a 50 nm thick permalloy film, we find that the strongest stray fields are along the film normal and parallel to the magnetization, on the order of 1 mA m-1 Hz- 1 / 2 or 1 nT Hz- 1 / 2, yielding relaxation times on the order of 10 μs. The spin wave field noise can dominate the intrinsic relaxation, (T1 1 ms) of the NV center spin.

  11. Light-emitting Si films formed by neutral cluster deposition in a thin O2 gas

    Honda, Y.; Takei, M.; Ohno, H.; Shida, S.; Goda, K.

    2005-01-01

    We have fabricated the light-emitting Si-rich and oxygen-rich amorphous SiO 2 (a-SiO 2 ) films using the neutral cluster deposition (NCD) method without and with oxygen gas admitted, respectively, and demonstrate for the first time that these films show a photoluminescent feature. The Si thin films were observed by atomic force microscopy and high-resolution transmission electron microscopy, and analyzed by means of X-ray photoelectron spectroscopy, photoluminescence (PL) and FTIR-attenuated total reflection measurements. All of the PL spectra show mountainous distribution with a peak around 620 nm. It is found that the increase in the oxygen termination in the a-SiO 2 films evidently makes the PL intensity increase. It is demonstrated that NCD technique is one of the hopeful methods to fabricate light-emitting Si thin films

  12. Light-emitting dendrimer film morphology: A neutron reflectivity study

    Vickers, S. V.; Barcena, H.; Knights, K. A.; Thomas, R. K.; Ribierre, J.-C.; Gambino, S.; Samuel, I. D. W.; Burn, P. L.; Fragneto, Giovanna

    2010-06-01

    We have used neutron reflectivity (NR) measurements to probe the physical structure of phosphorescent dendrimer films. The dendrimers consisted of fac-tris(2-phenylpyridyl)iridium(III) cores, biphenyl-based dendrons (first or second generation), and perdeuterated 2-ethylhexyloxy surface groups. We found that the shape and hydrodynamic radius of the dendrimer were both important factors in determining the packing density of the dendrimers. "Cone" shaped dendrimers were found to pack more effectively than "spherical" dendrimers even when the latter had a smaller radius. The morphology of the films determined by NR was consistent with the measured photoluminescence and charge transporting properties of the materials.

  13. Near-field photometry for organic light-emitting diodes

    Li, Rui; Harikumar, Krishnan; Isphording, Alexandar; Venkataramanan, Venkat

    2013-03-01

    Organic Light Emitting Diode (OLED) technology is rapidly maturing to be ready for next generation of light source for general lighting. The current standard test methods for solid state lighting have evolved for semiconductor sources, with point-like emission characteristics. However, OLED devices are extended surface emitters, where spatial uniformity and angular variation of brightness and colour are important. This necessitates advanced test methods to obtain meaningful data for fundamental understanding, lighting product development and deployment. In this work, a near field imaging goniophotometer was used to characterize lighting-class white OLED devices, where luminance and colour information of the pixels on the light sources were measured at a near field distance for various angles. Analysis was performed to obtain angle dependent luminous intensity, CIE chromaticity coordinates and correlated colour temperature (CCT) in the far field. Furthermore, a complete ray set with chromaticity information was generated, so that illuminance at any distance and angle from the light source can be determined. The generated ray set is needed for optical modeling and design of OLED luminaires. Our results show that luminance non-uniformity could potentially affect the luminaire aesthetics and CCT can vary with angle by more than 2000K. This leads to the same source being perceived as warm or cool depending on the viewing angle. As OLEDs are becoming commercially available, this could be a major challenge for lighting designers. Near field measurement can provide detailed specifications and quantitative comparison between OLED products for performance improvement.

  14. Enabling Lambertian-Like Warm White Organic Light-Emitting Diodes with a Yellow Phosphor Embedded Flexible Film

    Cheng-Chang Chen

    2014-01-01

    Full Text Available We demonstrate in this report a new constructive method of fabricating white organic light-emitting devices (OLEDs with a flexible plastic film embedded with yellow phosphor. The flexible film is composed of polydimethylsiloxane (PDMS and fabricated by using spin coating followed by peeling technology. From the results, the resultant electroluminescent spectrum shows the white OLED to have chromatic coordinates of 0.38 and 0.54 and correlated color temperature of 4200 K. The warm white OLED exhibits the yield of 10.3 cd/A and the luminous power efficiency of 5.4 lm/W at a luminance of 1000 cd/m2. A desirable Lambertian-like far-field pattern is detected from the white OLEDs with the yellow phosphor containing PDMS film. This method is simple, reproducible, and cost-effective, proving to be a highly feasible approach to realize white OLED.

  15. Polymer Light-Emitting Diode Prepared by Floating-Off Film-Transfer Technique

    Park, Jihoon; Kim, Eugene

    2015-01-01

    © 2015 Copyright Taylor & Francis Group, LLC. Floating-off film-transfer technique was used for the formation of semiconducting polymer multi-layers and the effect on the performance of polymer light-emitting diode (PLED) was studied. This method

  16. Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices

    Jiang, X.; Wong, F.L.; Fung, M.K.; Lee, S.T.

    2003-01-01

    Highly transparent conductive, aluminum-doped zinc oxide (ZnO:Al) films were deposited on glass substrates by midfrequency magnetron sputtering of metallic aluminum-doped zinc target. ZnO:Al films with surface work functions between 3.7 and 4.4 eV were obtained by varying the sputtering conditions. Organic light-emitting diodes (OLEDs) were fabricated on these ZnO:Al films. A current efficiency of higher than 3.7 cd/A, was achieved. For comparison, 3.9 cd/A was achieved by the reference OLEDs fabricated on commercial indium-tin-oxide substrates

  17. Fast Postmoisture Treatment of Luminescent Perovskite Films for Efficient Light-Emitting Diodes.

    Wang, Haoran; Li, Xiaomin; Yuan, Mingjian; Yang, Xuyong

    2018-04-01

    Despite the recent advances in the performance of perovskite light-emitting diodes (PeLEDs), the effects of water on the perovskite emissive layer and its electroluminescence are still unclear, even though it has been previously demonstrated that moisture has a significant impact on the quality of perovskite films in the fabrication process of perovskite solar cells and is a prerequisite for obtaining high-performance PeLEDs. Here, the effects of postmoisture on the luminescent CH 3 NH 3 PbBr 3 (MAPbBr 3 ) perovskite films are systematically investigated. It is found that postmoisture treatment can efficiently control the morphology and growth of perovskite films and only a fast moisture exposure at a 60% high relative humidity results in significantly improved crystallinity, carrier lifetime, and photoluminescence quantum yield of perovskite films. With the optimized moisture-treated perovskite films, a high-performance PeLED is fabricated, exhibiting a maximum current efficiency of 20.4 cd A -1 , which is an almost 20-fold enhancement when compared with perovskite films without moisture treatment. The results provide valuable insights into the moisture-assisted growth of luminescent perovskite films and will aid in the development of high-performance perovskite light-emitting devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Systematic investigation of the effects of organic film structure on light emitting diode performance

    Joswick, M. D.; Campbell, I. H.; Barashkov, N. N.; Ferraris, J. P.

    1996-09-01

    We present a systematic investigation of the effects of organic film structure on light emitting diode (LED) performance. Metal/organic film/metal LEDs were fabricated using a five ring, poly(phenylene vinylene) related oligomer as the active layer. The structure of the vacuum evaporated oligomer films was varied from amorphous to polycrystalline by changing the substrate temperature during deposition. The intrinsic properties of the oligomer films and the LED performance were measured. The measured intrinsic film properties include: optical absorption, photoluminescence (PL) spectra, PL lifetime, PL efficiency, and effective carrier mobility. The measured device characteristics include current-voltage, capacitance-voltage, electroluminescence (EL) efficiency, and the contact metal/organic film Schottky barrier heights. The optical absorption and PL properties of the films are weakly dependent on film structure but the effective carrier mobility decreases with increasing crystallinity. The EL quantum efficiency decreases by more than one order of magnitude, the drive voltage at a fixed current increases, and the electron Schottky barrier height increases as the crystallinity of the film is increased. The diode current-voltage characteristic is determined by the dominant hole current and the electroluminescence efficiency is controlled by the contact limited electron injection. These results demonstrate significant effects of organic film structure on the performance of organic LEDs.

  19. Systematic investigation of the effects of organic film structure on light emitting diode performance

    Joswick, M.D.; Campbell, I.H. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Barashkov, N.N.; Ferraris, J.P. [The University of Texas at Dallas, Richardson, Texas 75080 (United States)

    1996-09-01

    We present a systematic investigation of the effects of organic film structure on light emitting diode (LED) performance. Metal/organic film/metal LEDs were fabricated using a five ring, poly(phenylene vinylene) related oligomer as the active layer. The structure of the vacuum evaporated oligomer films was varied from amorphous to polycrystalline by changing the substrate temperature during deposition. The intrinsic properties of the oligomer films and the LED performance were measured. The measured intrinsic film properties include: optical absorption, photoluminescence (PL) spectra, PL lifetime, PL efficiency, and effective carrier mobility. The measured device characteristics include current{endash}voltage, capacitance{endash}voltage, electroluminescence (EL) efficiency, and the contact metal/organic film Schottky barrier heights. The optical absorption and PL properties of the films are weakly dependent on film structure but the effective carrier mobility decreases with increasing crystallinity. The EL quantum efficiency decreases by more than one order of magnitude, the drive voltage at a fixed current increases, and the electron Schottky barrier height increases as the crystallinity of the film is increased. The diode current{endash}voltage characteristic is determined by the dominant hole current and the electroluminescence efficiency is controlled by the contact limited electron injection. These results demonstrate significant effects of organic film structure on the performance of organic LEDs. {copyright} {ital 1996 American Institute of Physics.}

  20. Selective Photophysical Modification on Light-Emitting Polymer Films for Micro- and Nano-Patterning

    Xinping Zhang

    2016-02-01

    Full Text Available Laser-induced cross-linking in polymeric semiconductors was utilized to achieve micro- and nano-structuring in thin films. Single- and two-photon cross-linking processes led to the reduction in both the refractive index and thickness of the polymer films. The resultant photonic structures combine the features of both relief- and phase-gratings. Selective cross-linking in polymer blend films based on different optical response of different molecular phases enabled “solidification” of the phase-separation scheme, providing a stable template for further photonic structuring. Dielectric and metallic structures are demonstrated for the fabrication methods using cross-linking in polymer films. Selective cross-linking enables direct patterning into polymer films without introducing additional fabrication procedures or additional materials. The diffraction processes of the emission of the patterned polymeric semiconductors may provide enhanced output coupling for light-emitting diodes or distributed feedback for lasers.

  1. Magnetic field effect in organic light emitting diodes

    Niedermeier, Ulrich

    2009-12-14

    The discovery of a magnetic field dependent resistance change of organic light emitting diodes (OLEDs) in the year 2003 has attracted considerable scientific and industrial research interest. However, despite previous progress in the field of organic spin-electronics, the phenomenon of the ''organic magnetoresistance (OMR) effect'' is not yet completely understood. In order to improve the understanding of the microscopic mechanisms which ultimately cause the OMR effect, experimental investigations as well as theoretical considerations concerning the OMR are addressed in this thesis. In polymer-based OLED devices the functional dependencies of the OMR effect on relevant parameters like magnetic field, operating voltage, operating current and temperature are investigated. Based on these results, previously published models for potential OMR mechanisms are critically analyzed and evaluated. Finally, a concept for the OMR effect is favored which suggests magnetic field dependent changes of the spin state of electron-hole pairs as being responsible for changes in current flow and light emission in OLEDs. In the framework of this concept it is possible to explain all results from own measurements as well as results from literature. Another important finding made in this thesis is the fact that the value of the OMR signal in the investigated OLED devices can be enhanced by appropriate electrical and optical conditioning processes. In particular, electrical conditioning causes a significant enhancement of the OMR values, while at the same time it has a negative effect on charge carrier transport and optical device characteristics. These results can be explained by additional results from charge carrier extraction measurements which suggest that electrical conditioning leads to an increase in the number of electronic trap states inside the emission layer of the investigated OLED devices. The positive influence of trap states on the OMR effect is

  2. In Situ Preparation of Metal Halide Perovskite Nanocrystal Thin Films for Improved Light-Emitting Devices.

    Zhao, Lianfeng; Yeh, Yao-Wen; Tran, Nhu L; Wu, Fan; Xiao, Zhengguo; Kerner, Ross A; Lin, YunHui L; Scholes, Gregory D; Yao, Nan; Rand, Barry P

    2017-04-25

    Hybrid organic-inorganic halide perovskite semiconductors are attractive candidates for optoelectronic applications, such as photovoltaics, light-emitting diodes, and lasers. Perovskite nanocrystals are of particular interest, where electrons and holes can be confined spatially, promoting radiative recombination. However, nanocrystalline films based on traditional colloidal nanocrystal synthesis strategies suffer from the use of long insulating ligands, low colloidal nanocrystal concentration, and significant aggregation during film formation. Here, we demonstrate a facile method for preparing perovskite nanocrystal films in situ and that the electroluminescence of light-emitting devices can be enhanced up to 40-fold through this nanocrystal film formation strategy. Briefly, the method involves the use of bulky organoammonium halides as additives to confine crystal growth of perovskites during film formation, achieving CH 3 NH 3 PbI 3 and CH 3 NH 3 PbBr 3 perovskite nanocrystals with an average crystal size of 5.4 ± 0.8 nm and 6.4 ± 1.3 nm, respectively, as confirmed through transmission electron microscopy measurements. Additive-confined perovskite nanocrystals show significantly improved photoluminescence quantum yield and decay lifetime. Finally, we demonstrate highly efficient CH 3 NH 3 PbI 3 red/near-infrared LEDs and CH 3 NH 3 PbBr 3 green LEDs based on this strategy, achieving an external quantum efficiency of 7.9% and 7.0%, respectively, which represent a 40-fold and 23-fold improvement over control devices fabricated without the additives.

  3. Tuneable light-emitting carbon-dot/polymer flexible films prepared through one-pot synthesis

    Bhunia, Susanta Kumar; Nandi, Sukhendu; Shikler, Rafi; Jelinek, Raz

    2016-02-01

    Development of efficient, inexpensive, and environmentally-friendly light emitters, particularly devices that produce white light, have drawn intense interest due to diverse applications in the lighting industry, photonics, solar energy, and others. We present a simple strategy for the fabrication of flexible transparent films exhibiting tuneable light emission through one-pot synthesis of polymer matrixes with embedded carbon dots assembled in situ. Importantly, different luminescence colours were produced simply by preparing C-dot/polymer films using carbon precursors that yielded C-dots exhibiting distinct fluorescence emission profiles. Furthermore, mixtures of C-dot precursors could be also employed for fabricating films exhibiting different colours. In particular, we successfully produced films emitting white light with attractive properties (i.e. ``warm'' white light with a high colour rendering index) - a highly sought after goal in optical technologies.Development of efficient, inexpensive, and environmentally-friendly light emitters, particularly devices that produce white light, have drawn intense interest due to diverse applications in the lighting industry, photonics, solar energy, and others. We present a simple strategy for the fabrication of flexible transparent films exhibiting tuneable light emission through one-pot synthesis of polymer matrixes with embedded carbon dots assembled in situ. Importantly, different luminescence colours were produced simply by preparing C-dot/polymer films using carbon precursors that yielded C-dots exhibiting distinct fluorescence emission profiles. Furthermore, mixtures of C-dot precursors could be also employed for fabricating films exhibiting different colours. In particular, we successfully produced films emitting white light with attractive properties (i.e. ``warm'' white light with a high colour rendering index) - a highly sought after goal in optical technologies. Electronic supplementary information (ESI

  4. [Effects of white organic light-emitting devices using color conversion films on electroluminescence spectra].

    Hou, Qing-Chuan; Wu, Xiao-Ming; Hua, Yu-Lin; Qi, Qing-Jin; Li, Lan; Yin, Shou-Gen

    2010-06-01

    The authors report a novel white organic light-emitting device (WOLED), which uses a strategy of exciting organic/ inorganic color conversion film with a blue organic light-emitting diode (OLED). The luminescent layer of the blue OLED was prepared by use of CBP host blended with a blue highly fluorescent dye N-BDAVBi. The organic/inorganic color conversion film was prepared by dispersing a mixture of red pigment VQ-D25 and YAG : Ce3+ phosphor in PMMA. The authors have achieved a novel WOLED with the high color stability by optimizing the thickness and fluorescent pigment concentration of the color conversion film. When the driving voltage varied between 6 and 14 V, the color coordinates (CIE) varied slightly from (0.354, 0.304) to (0.357, 0.312) and the maximum current efficiency is about 5.8 cd x A(-1) (4.35 mA x cm(-2)), the maximum brightness is 16 800 cd x m(-2) at the operating voltage of 14 V.

  5. Array of organic thin film transistors integrated with organic light emitting diodes on a plastic substrate

    Ryu, Gi-Seong; Choe, Ki-Beom; Song, Chung-Kun

    2006-01-01

    In order to demonstrate the possible application of an organic thin film transistor (OTFT) to a flexible active matrix organic light emitting diode (OLED) an array of 64 x 64 pixels was fabricated on a 4-in. size poly-ethylene-terephehalate substrate. Each pixel was composed of one OTFT integrated with one OLED. OTFTs successfully drove OLEDs by varying current in a wide range and some images were displayed on the array by emitting green light. The OTFTs used poly(4-vinylphenol) for the gate and pentacene for the semiconductor taking account compatibility with the PET substrate. The average mobility in the array was 0.2 cm 2 /V.s, which was reduced from 1.0 cm 2 /V.s in a single OTFT, and its variation over the entire substrate was 10%

  6. An anode with aluminum doped on zinc oxide thin films for organic light emitting devices

    Xu Denghui; Deng Zhenbo; Xu Ying; Xiao Jing; Liang Chunjun; Pei Zhiliang; Sun Chao

    2005-01-01

    Doped zinc oxides are attractive alternative materials as transparent conducting electrode because they are nontoxic and inexpensive compared with indium tin oxide (ITO). Transparent conducting aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by DC reactive magnetron sputtering method. Films were deposited at a substrate temperature of 150-bar o C in 0.03 Pa of oxygen pressure. The electrical and optical properties of the film with the Al-doping amount of 2 wt% in the target were investigated. For the 300-nm thick AZO film deposited using a ZnO target with an Al content of 2 wt%, the lowest electrical resistivity was 4x10 -4 Ωcm and the average transmission in the visible range 400-700 nm was more than 90%. The AZO film was used as an anode contact to fabricate organic light-emitting diodes. The device performance was measured and the current efficiency of 2.9 cd/A was measured at a current density of 100 mA/cm 2

  7. Field electron emission from branched nanotubes film

    Zeng Baoqing; Tian Shikai; Yang Zhonghai

    2005-01-01

    We describe the preparation and analyses of films composed of branched carbon nanotubes (CNTs). The CNTs were grown on a Ni catalyst film using chemical vapor deposition from a gas containing acetylene. From scanning electron microscope (SEM) and transmission electron microscope (TEM) analyses, the branched structure of the CNTs was determined; the field emission characteristics in a vacuum chamber indicated a lower turn on field for branched CNTs than normal CNTs

  8. Glass microspheres covering film: first field evaluations

    Magnani, G.; Filippi, F.

    2006-01-01

    A trial was carried out to evaluate, in the North-Centre of Italy, the behaviour in field of a new plastic covering film, prepared with the inclusion of empty glass microspheres (Solex). The trial was conducted on tomato (Lycopersicon esculentum L.) and eggplant (Solanum melongena L.). The new film was compared to a covering film with the same optical (diffuse light) and constitutional (co-extruded three layers EVA-WPE) characteristics. Since the first results, the innovative film showed a better behaviour than the control one. It presented light and thermal conditions (lower temperature during the day and slightly higher temperature in the night, compared to the control film) that allowed a better growth and yield than the control film. The growth analysis of tomato showed that plants grown under glass microsphere film had an higher growth rate (dry weight/days) and thickness of leaves compared to the control one. The yield of tomato and eggplant presented an increase in plants cultivated under the innovative film, especially for number and weight of fruits. The commercial quality did not show any differences between the films, except for the flesh hardness of tomato: this could be explained with the fact that the glass microspheres film provides environmental conditions avoiding plant stress during some stages of its cycle [it

  9. Photonic effects in microstructured conjugated polymer films and light emitting diodes

    Matterson, B.J.

    2002-03-01

    This thesis reports an investigation into the photonic effects caused by wavelength scale microstructure patterned onto films of conjugated polymers. The efficiency of light emitting diodes (LEDs) made from conjugated polymers is limited in part by the trapping of light into waveguide modes caused by the high refractive index of these materials. Waveguide modes in films of poly(p,-phenylene vinylene) (PPV) and poly(2-methoxy, 5-(2'ethylhexyloxy)-p-phenylene vinylene) (MEH-PPV) are analysed and the refractive index of these materials is calculated. The photoluminescence of conjugated polymer films that have been spun onto textured substrates is analysed. It is found that the photoluminescence quantum yield of a film spun onto a substrate inscribed with a grating is increased. It is also found that the photoluminescence spectrum of the film is dramatically altered and varies substantially with viewing angle. The features in the spectrum caused by the grating are strongly polarized. These effects are analysed and are attributed to the scattering of waveguided light out of the film. It is found that films spun onto metal gratings exhibit especially strong scattering. The effect of metal gratings with various grating depths is analysed. The possible contribution of band gaps to the photoluminescence spectrum from polymers on strong metal gratings is discussed. LEDs that include grating structures are constructed and analysed. It is found that having grating structures on the metal layers that are used as electrodes in the LED does not adversely affect the electrical properties of the LED. It is demonstrated that grating in the LED is able to substantially increase the light emission without using extra electrical power. The emission spectra from LEDs are observed to vary with angle, and exhibit considerable polarization. (author)

  10. Confocal fluorescence microscopy investigation of visible emitting defects induced by electron beam lithography in LIF films

    Montereali, R. M.; Bigotta, S.; Pace, A.; Piccinini, M.; Burattini, E.; Grilli, A.; Raco, A.; Giammatteo, M.; L'Aquila Univ., L'Aquila; Picozzi, P.; Santucci, S.; L'Aquila Univ., L'Aquila

    2000-01-01

    Low energy electron irradiation of lithium fluoride (LiF), in the form of bulk crystals and films, gives rise to the stable formation of primary F defects and aggregated color centers in a thin layer located at the surface of the investigated material. For the first time a confocal light scanning microscope (CLSM) in fluorescence mode was used to reconstruct the depth distribution of efficiently emitting laser active color centers in a stripe-like region induced by 12 and 16 keV electrons on LiF films thermally evaporated on glass. The formation of the F3+ and F2 aggregated defects appears restricted to the electron penetration and proportional to their energy depth profile, as obtained from Monte Carlo simulations [it

  11. Polymer Light-Emitting Diode Prepared by Floating-Off Film-Transfer Technique

    Park, Jihoon

    2015-12-22

    © 2015 Copyright Taylor & Francis Group, LLC. Floating-off film-transfer technique was used for the formation of semiconducting polymer multi-layers and the effect on the performance of polymer light-emitting diode (PLED) was studied. This method made it possible to avoid the solvent compatibility problem that was typically encountered in successive coating of polymeric multilayer by solution processing. F8BT and MEH-PPV were used for electron transporting layer (ETL) and for emissive layer, respectively. Current-voltage-luminance characteristics and luminescence efficiency results showed that the insertion of ETL by floating-off film-transfer technique followed by proper heat treatment resulted in a significant improvement in PLED operation due to its electron-transporting and hole-blocking abilities.

  12. Measurements of Electromagnetic Fields Emitted from Cellular Base Stations in

    K. J. Ali

    2013-05-01

    Full Text Available With increasing the usage of mobile communication devices and internet network information, the entry of private telecommunications companies in Iraq has been started since 2003. These companies began to build up cellular towers to accomplish the telecommunication works but they ignore the safety conditions imposed for the health and environment that are considered in random way. These negative health effects which may cause a health risk for life beings and environment pollution. The aim of this work is to determine the safe and unsafe ranges and discuss damage caused by radiation emitted from Asia cell base stations in Shirqat city and discuses the best ways in which can be minimize its exposure level to avoid its negative health effects. Practical measurements of power density around base stations has been accomplished by using a radiation survey meter type (Radio frequency EMF Strength Meter 480846 in two ways. The first way of measurements has been accomplished at a height of 2 meters above ground for different distances from (0-300 meters .The second way is at a distance of 150 meters for different levels from (2-15 meters above ground level. The maximum measured power density is about (3 mW/m2. Results indicate that the levels of power density are far below the RF radiation exposure of USSR safety standards levels. And that means these cellular base station don't cause negative the health effect for life being if the exposure is within the acceptable international standard levels.

  13. Echolocating bats emit a highly directional sonar sound beam in the field

    Surlykke, Annemarie; Boel Pedersen, Simon; Jakobsen, Lasse

    2009-01-01

    Bats use echolocation or biosonar to navigate and find prey at night. They emit short ultrasonic calls and listen for reflected echoes. The beam width of the calls is central to the function of the sonar, but directionality of echolocation calls has never been measured from bats flying in the wild....... We used a microphone array to record sounds and determine horizontal directionality for echolocation calls of the trawling Daubenton's bat, Myotis daubentonii, flying over a pond in its natural habitat. Myotis daubentonii emitted highly directional calls in the field. Directionality increased...... and directionality can be explained by the simple piston model. The model also suggests that the increase in the emitted intensity in the field is caused by the increased directionality, focusing sound energy in the forward direction. The bat may increase directionality by opening the mouth wider to emit a louder...

  14. Properties of the localized field emitted from degenerate Λ-type atoms in photonic crystals

    Foroozani, N.; Golshan, M. M.; Mahjoei, M.

    2007-01-01

    The spontaneous emission from a degenerate Λ-type three-level atom, embedded in a photonic crystal, is studied. The emitted field, as a function of time and position, is calculated by solving the three coupled differential equations governing the amplitudes. We show that the spontaneously emitted field is characterized by three components (as in the case of two-level and V-type atoms): a localized part, a traveling part, and a t -3/2 decaying part. Our calculations indicate that under specific conditions the atoms do not emit propagating fields, while the localized field, having shorter localization length and time, is intensified. As a consequence, the population of the upper level, after a short period of oscillations, approaches a constant value. It is also shown that this steady value, under the same conditions, is much larger than its counterpart in V-type atoms

  15. Organic thin film transistors and polymer light-emitting diodes patterned by polymer inking and stamping

    Li Dawen; Guo, L Jay

    2008-01-01

    To fully realize the advantages of organic flexible electronics, patterning is very important. In this paper we show that a purely additive patterning technique, termed polymer inking and stamping, can be used to pattern conductive polymer PEDOT and fabricate sub-micron channel length organic thin film transistors. In addition, we applied the technique to transfer a stack of metal/conjugated polymer in one step and fabricated working polymer light-emitting devices. Based on the polymer inking and stamping technique, a roll-to-roll printing for high throughput fabrication has been demonstrated. We investigated and explained the mechanism of this process based on the interfacial energy consideration and by using the finite element analysis. This technique can be further extended to transfer more complex stacked layer structures, which may benefit the research on patterning on flexible substrates

  16. Confocal fluorescence microscopy investigation of visible emitting defects induced by electron beam lithography in LIF films

    Montereali, R.M.; Bigotta, S.; Pace, A.; Piccinini, M. [ENEA, Divisione Fisica Applicata, Centro Ricerche Frascati, Frascati, RM (Italy); Burattini, E.; Grilli, A.; Raco, A. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Fisica, Frascati, Rome (Italy); Giammatteo, M. [Unita' Istituto Nazionale di Fisica Nucleare, Frascati, RM (Italy)]|[L' Aquila Univ., L' Aquila (Italy). Centro di Microscopia Elettronica; Picozzi, P.; Santucci, S. [Unita' Istituto Nazionale di Fisica Nucleare, Frascati, RM (Italy)]|[L' Aquila Univ., L' Aquila (Italy). Dipt. di Fisica

    2000-07-01

    Low energy electron irradiation of lithium fluoride (LiF), in the form of bulk crystals and films, gives rise to the stable formation of primary F defects and aggregated color centers in a thin layer located at the surface of the investigated material. For the first time a confocal light scanning microscope (CLSM) in fluorescence mode was used to reconstruct the depth distribution of efficiently emitting laser active color centers in a stripe-like region induced by 12 and 16 keV electrons on LiF films thermally evaporated on glass. The formation of the F{sub 3}{sup +} and F{sub 2} aggregated defects appears restricted to the electron penetration and proportional to their energy depth profile, as obtained from Monte Carlo simulations. [Italian] L'irraggiamento con elettroni di bassa energia del fluoruro di litio (LiF), in forma di cristalli e film, induce la formazione di difetti primari F e centri di colore aggregati stabili in un sottile strato localizzato alla superficie del materiale investigato. Per la prima volta un microscopio confocale a scansione (CLSM) in modalita' fluorescenza e' stato usato per ricostruire la distribuzione di centri di colore laser attivi ad alta efficienza di emissione nel visibile, in strisce colorate ottenute con elettroni da 12 e 16 keV su film di LiF evaporati termicamente su vetro. La formazione dei difetti aggregati F2 e F3+ risulta ristretta spazialmente nella regione di penetrazione degli elettroni e proporzionale al profilo della distribuzione dell'energia da essi depositata, ricavata tramite simulazioni Monte Carlo.

  17. Novel UV-emitting single crystalline film phosphors grown by LPE method

    Zorenko, Y.; Gorbenko, V.; Savchyn, V.; Voznyak, T.; Nikl, M.; Mares, J.A.; Winnacker, A.

    2010-01-01

    This work reports the development of new types of UV-emitting phosphors based on single crystalline films (SCF) of aluminum garnet and perovskite compounds grown by the liquid phase epitaxy method. We consider peculiarities of the growth and the luminescent and scintillation properties of the following four types of UV SCF phosphors: i) Ce-doped SCF of Y-Lu-Al-perovskites with the Ce 3+ emission in the 300-450 nm range of the decay time of 16-17 ns; ii) Pr-doped SCF of Y-Lu-Al garnets and perovskites with the Pr 3+ emission in the 300-400 nm and 235-330 nm ranges with the decay time of 13-19 and 7-8 ns, respectively; iii) La 3+ or Sc 3+ doped SCF of Y-Lu-Al-garnets, emitting in the 280-400 nm range due to formation of the La Y,Lu , Sc Y,Lu and Sc Al centers with decay time of the order of several hundreds of nanoseconds; iv) Bi 3+ doped SCF of garnets with Bi 3+ emission in 275-350 nm with decay time of about 1.9 μs.

  18. Small fields measurements with radiochromic films.

    Gonzalez-Lopez, Antonio; Vera-Sanchez, Juan-Antonio; Lago-Martin, Jose-Domingo

    2015-01-01

    The small fields in radiotherapy are widely used due to the development of techniques such as intensity-modulated radiotherapy and stereotactic radio surgery. The measurement of the dose distributions for small fields is a challenge. A perfect dosimeter should be independent of the radiation energy and the dose rate and should have a negligible volume effect. The radiochromic (RC) film characteristics fit well to these requirements. However, the response of RC films and their digitizing processes present a significant spatial inhomogeneity problem. The present work uses a method for two-dimensional (2D) measurement with RC films based on the reduction of the spatial inhomogeneity of both the film and the film digitizing process. By means of registering and averaging several measurements of the same field, the inhomogeneities are mostly canceled. Measurements of output factors (OFs), dose profiles (in-plane and cross-plane), and 2D dose distributions are presented. The field sizes investigated are 0.5 × 0.5 cm(2), 0.7 × 0.7 cm(2), 1 × 1 cm(2), 2 × 2 cm(2), 3 × 3 cm(2), 6 × 6 cm(2), and 10 × 10 cm(2) for 6 and 15 MV photon beams. The OFs measured with the RC film are compared with the measurements carried out with a PinPoint ionization chamber (IC) and a Semiflex IC, while the measured transversal dose profiles were compared with Monte Carlo simulations. The results obtained for the OFs measurements show a good agreement with the values obtained from RC films and the PinPoint and Semiflex chambers when the field size is greater or equal than 2 × 2 cm(2). These agreements give confidence on the accuracy of the method as well as on the results obtained for smaller fields. Also, good agreement was found between the measured profiles and the Monte Carlo calculated profiles for the field size of 1 × 1 cm(2). We expect, therefore, that the presented method can be used to perform accurate measurements of small fields.

  19. Electron field emission for ultrananocrystalline diamond films

    Krauss, A. R.; Auciello, O.; Ding, M. Q.; Gruen, D. M.; Huang, Y.; Zhirnov, V. V.; Givargizov, E. I.; Breskin, A.; Chechen, R.; Shefer, E. (and others)

    2001-03-01

    Ultrananocrystalline diamond (UNCD) films 0.1--2.4 {mu}m thick were conformally deposited on sharp single Si microtip emitters, using microwave CH{sub 4}--Ar plasma-enhanced chemical vapor deposition in combination with a dielectrophoretic seeding process. Field-emission studies exhibited stable, extremely high (60--100 {mu}A/tip) emission current, with little variation in threshold fields as a function of film thickness or Si tip radius. The electron emission properties of high aspect ratio Si microtips, coated with diamond using the hot filament chemical vapor deposition (HFCVD) process were found to be very different from those of the UNCD-coated tips. For the HFCVD process, there is a strong dependence of the emission threshold on both the diamond coating thickness and Si tip radius. Quantum photoyield measurements of the UNCD films revealed that these films have an enhanced density of states within the bulk diamond band gap that is correlated with a reduction in the threshold field for electron emission. In addition, scanning tunneling microscopy studies indicate that the emission sites from UNCD films are related to minima or inflection points in the surface topography, and not to surface asperities. These data, in conjunction with tight binding pseudopotential calculations, indicate that grain boundaries play a critical role in the electron emission properties of UNCD films, such that these boundaries: (a) provide a conducting path from the substrate to the diamond--vacuum interface, (b) produce a geometric enhancement in the local electric field via internal structures, rather than surface topography, and (c) produce an enhancement in the local density of states within the bulk diamond band gap.

  20. Determination of the optical constants of polymer light-emitting diode films from single reflection measurements

    Zhu Dexi; Shen Weidong; Ye Hui; Liu Xu; Zhen Hongyu

    2008-01-01

    We present a simple and fast method to determine the optical constant and physical thickness of polymer films from a single reflectivity measurement. A self-consistent dispersion formula of the Forouhi-Bloomer model was introduced to fit the measured spectral curves by a modified 'Downhill' simplex algorithm. Four widely used polymer light-emitting diodes materials: poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylenevinylene], poly(9,9-dioctylfluoreny-2,7-diyl) (PFO), poly(N-vinyl carbazole) and poly(3,4-ethylene dioxythiophene) : poly(styrenesulfonate) were investigated by this technique. The refractive indices over the whole visible region as well as the optical band gap extracted by this method agree well with those reported in the literature. The determined physical thicknesses present a deviation less than 4% compared with the experimental values measured by the stylus profiler. The influence of scattering loss on the fitted results is discussed to demonstrate the applicability of this technology for polymer films.

  1. Spontaneous electric fields in solid films: spontelectrics

    Field, David; Plekan, Oksana; Cassidy, Andrew

    2013-01-01

    When dipolar gases are condensed at sufficiently low temperature onto a solid surface, they form films that may spontaneously exhibit electric fields in excess of 108V/m. This effect, called the ‘spontelectric effect’, was recently revealed using an instrument designed to measure scattering....... Heterolayers may also be laid down creating potential wells on the nanoscale. A model is put forward based upon competition between dipole alignment and thermal disorder, which is successful in reproducing the variation of the degree of dipole alignment and the spontelectric field with deposition temperature...

  2. Nanopatterned yttrium aluminum garnet phosphor incorporated film for high-brightness GaN-based white light emitting diodes

    Cho, Joong-yeon; Park, Sang-Jun; Ahn, Jinho; Lee, Heon

    2014-01-01

    In this study, we fabricated high-brightness white light emitting diodes (LEDs) by developing a nanopatterned yttrium aluminum garnet (YAG) phosphor-incorporated film. White light can be obtained by mixing blue light from a GaN-based LED and yellow light of the YAG phosphor-incorporated film. If white light sources can be fabricated by exciting proper yellow phosphor using blue light, then these sources can be used instead of the conventional fluorescent lamps with a UV source, for backlighting of displays. In this work, a moth-eye structure was formed on the YAG phosphor-incorporated film by direct spin-on glass (SOG) printing. The moth-eye structures have been investigated to improve light transmittance in various optoelectronic devices, including photovoltaic solar cells, light emitting diodes, and displays, because of their anti-reflection property. Direct SOG printing, which is a simple, easy, and relatively inexpensive process, can be used to fabricate nanoscale structures. After direct SOG printing, the moth-eye structure with a diameter of 220 nm was formed uniformly on the YAG phosphor-incorporated film. As a result of moth-eye patterning on the YAG phosphor-incorporated film, the light output power of a white LED with a patterned YAG phosphor-incorporated film increased to up to 13% higher than that of a white LED with a non-patterned film. - Highlights: • GaN-based high-brightness white LED was prepared using patterned YAG phosphor-incorporated films. • Direct hydrogen silsesquioxane printing was used to form moth-eye patterns on the YAG films. • The electroluminescence intensity of the white LED was enhanced by up to 14.9%

  3. Nanopatterned yttrium aluminum garnet phosphor incorporated film for high-brightness GaN-based white light emitting diodes

    Cho, Joong-yeon; Park, Sang-Jun [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Ahn, Jinho, E-mail: jhahn@hanyang.ac.kr [Department of Material Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Lee, Heon, E-mail: heonlee@korea.ac.kr [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

    2014-11-03

    In this study, we fabricated high-brightness white light emitting diodes (LEDs) by developing a nanopatterned yttrium aluminum garnet (YAG) phosphor-incorporated film. White light can be obtained by mixing blue light from a GaN-based LED and yellow light of the YAG phosphor-incorporated film. If white light sources can be fabricated by exciting proper yellow phosphor using blue light, then these sources can be used instead of the conventional fluorescent lamps with a UV source, for backlighting of displays. In this work, a moth-eye structure was formed on the YAG phosphor-incorporated film by direct spin-on glass (SOG) printing. The moth-eye structures have been investigated to improve light transmittance in various optoelectronic devices, including photovoltaic solar cells, light emitting diodes, and displays, because of their anti-reflection property. Direct SOG printing, which is a simple, easy, and relatively inexpensive process, can be used to fabricate nanoscale structures. After direct SOG printing, the moth-eye structure with a diameter of 220 nm was formed uniformly on the YAG phosphor-incorporated film. As a result of moth-eye patterning on the YAG phosphor-incorporated film, the light output power of a white LED with a patterned YAG phosphor-incorporated film increased to up to 13% higher than that of a white LED with a non-patterned film. - Highlights: • GaN-based high-brightness white LED was prepared using patterned YAG phosphor-incorporated films. • Direct hydrogen silsesquioxane printing was used to form moth-eye patterns on the YAG films. • The electroluminescence intensity of the white LED was enhanced by up to 14.9%.

  4. A flexible organic active matrix circuit fabricated using novel organic thin film transistors and organic light-emitting diodes

    Gutiérrez-Heredia, Gerardo

    2010-10-04

    We present an active matrix circuit fabricated on plastic (polyethylene naphthalene, PEN) and glass substrates using organic thin film transistors and organic capacitors to control organic light-emitting diodes (OLEDs). The basic circuit is fabricated using two pentacene-based transistors and a capacitor using a novel aluminum oxide/parylene stack (Al2O3/ parylene) as the dielectric for both the transistor and the capacitor. We report that our circuit can deliver up to 15 μA to each OLED pixel. To achieve 200 cd m-2 of brightness a 10 μA current is needed; therefore, our approach can initially deliver 1.5× the required current to drive a single pixel. In contrast to parylene-only devices, the Al2O 3/parylene stack does not fail after stressing at a field of 1.7 MV cm-1 for >10 000 s, whereas \\'parylene only\\' devices show breakdown at approximately 1000 s. Details of the integration scheme are presented. © 2010 IOP Publishing Ltd.

  5. A flexible organic active matrix circuit fabricated using novel organic thin film transistors and organic light-emitting diodes

    Gutié rrez-Heredia, Gerardo; Gonzá lez, Luis A.; Alshareef, Husam N.; Gnade, Bruce E.; Quevedo-Ló pez, Manuel Angel Quevedo

    2010-01-01

    We present an active matrix circuit fabricated on plastic (polyethylene naphthalene, PEN) and glass substrates using organic thin film transistors and organic capacitors to control organic light-emitting diodes (OLEDs). The basic circuit is fabricated using two pentacene-based transistors and a capacitor using a novel aluminum oxide/parylene stack (Al2O3/ parylene) as the dielectric for both the transistor and the capacitor. We report that our circuit can deliver up to 15 μA to each OLED pixel. To achieve 200 cd m-2 of brightness a 10 μA current is needed; therefore, our approach can initially deliver 1.5× the required current to drive a single pixel. In contrast to parylene-only devices, the Al2O 3/parylene stack does not fail after stressing at a field of 1.7 MV cm-1 for >10 000 s, whereas 'parylene only' devices show breakdown at approximately 1000 s. Details of the integration scheme are presented. © 2010 IOP Publishing Ltd.

  6. Dual-Emitting UiO-66(Zr&Eu) Metal-Organic Framework Films for Ratiometric Temperature Sensing.

    Feng, Ji-Fei; Liu, Tian-Fu; Shi, Jianlin; Gao, Shui-Ying; Cao, Rong

    2018-06-20

    A novel dual-emitting metal-organic framework based on Zr and Eu, named as UiO-66(Zr&Eu), was built using a clever strategy based on secondary building units. With the use of polymers, the obtained UiO-66(Zr&Eu) was subsequently deposited as thin films that can be utilized as smart thermometers. The UiO-66(Zr&Eu) polymer films can be used for the detection of temperature changes in the range of 237-337 K due to the energy transfer between the lanthanide ions (Eu in clusters) and the luminescent ligands, and the relative sensitivity reaches 4.26% K -1 at 337 K. Moreover, the sensitivity can be improved to 19.67% K -1 by changing the film thickness. In addition, the temperature-sensing performance of the films is superior to that of the powders, and the sensor can be reused 3 times without loss of performance.

  7. Heavy Mg-doping of (Al,Ga)N films for potential applications in deep ultraviolet light-emitting structures

    Liang, Y. H.; Towe, E.

    2018-03-01

    Doping of high aluminum-containing (Al,Ga)N thin films has remained a challenging problem that has hindered progress in the development of deep ultraviolet light-emitters. This paper reports on the synthesis and use of heavily doped (Al,Ga)N films in deep ultraviolet (˜274 nm) light-emitting structures; these structures were synthesized by molecular beam epitaxy under liquid-metal growth conditions that facilitate the incorporation of extremely high density of Mg dopant impurities (up to 5 × 1019 cm-3) into aluminum-rich (Al,Ga)N thin films. Prototypical light-emitting diode structures incorporating Al0.7Ga0.3N films doped with Mg impurities that ionize to give free hole carrier concentrations of up to 6 × 1017 cm-3 exhibit external quantum efficiencies of up 0.56%; this is an improvement from previous devices made from molecular beam epitaxy-grown materials. This improvement is believed to be due to the high hole carrier concentration enabled by the relatively low activation energy of 220 meV compared to the expected values of 408-507 meV for Al0.7Ga0.3N films.

  8. Enhancement of electron injection in inverted bottom-emitting organic light-emitting diodes using Al/LiF compound thin film

    Nie, Qu-yang; Zhang, Fang-hui

    2018-05-01

    The inverted bottom-emitting organic light-emitting devices (IBOLEDs) were prepared, with the structure of ITO/Al ( x nm)/LiF (1 nm)/Bphen (40 nm)/CBP: GIr1 (14%):R-4b (2%) (10 nm)/BCP (3 nm)/CBP:GIr1 (14%):R-4b (2%) (20 nm)/TCTA (10 nm)/NPB (40 nm)/MoO3 (40 nm)/Al (100 nm), where the thickness of electron injection layer Al ( x) are 0 nm, 2 nm, 3 nm, 4 nm and 5 nm, respectively. In this paper, the electron injection condition and luminance properties of inverted devices were investigated by changing the thickness of Al layer in Al/LiF compound thin film. It turns out that the introduction of Al layer can improve electron injection of the devices dramatically. Furthermore, the device exerts lower driving voltage and higher current efficiency when the thickness of electron injection Al layer is 3 nm. For example, the current efficiency of the device with 3-nm-thick Al layer reaches 19.75 cd·A-1 when driving voltage is 7 V, which is 1.24, 1.17 and 17.03 times larger than those of the devices with 2 nm, 4 nm and 5 nm Al layer, respectively. The device property reaches up to the level of corresponding conventional device. In addition, all inverted devices with electron injection Al layer show superior stability of color coordinate due to the adoption of co-evaporation emitting layer and BCP spacer-layer, and the color coordinate of the inverted device with 3-nm-thick Al layer only changes from (0.580 6, 0.405 6) to (0.532 8, 0.436 3) when driving voltage increases from 6 V to 10 V.

  9. Ordered conducting polymer multilayer films and its application for hole injection layers in organic light-emitting devices

    Xu Jianhua; Yang Yajie; Yu Junsheng; Jiang Yadong

    2009-01-01

    We reported a controlled architecture growth of layer-ordered multilayer film of poly(3,4-ethylene dioxythiophene) (PEDOT) via a modified Langmuir-Blodgett (LB) method. An in situ polymerization of 3,4-ethylene dioxythiophene (EDOT) monomer in multilayer LB film occurred for the formation of ordered conducting polymer embedded multilayer film. The well-distribution of conducting polymer particles was characterized by secondary-ion mass spectrometry (SIMS). The conducting film consisting of ordered PEDOT ultrathin layers was investigated as a hole injection layer for organic light-emitting diodes (OLEDs). The results showed that, compared to conventional spin-coating PEDOT film and electrostatic self-assembly (ESA) film, the improved performance of OLEDs was obtained after using ordered PEDOT LB film as hole injection layer. It also indicated that well-ordered structure of hole injection layer was attributed to the improvement of OLED performance, leading to the increase of charged carrier mobility in hole injection layer and the recombination rate of electrons and holes in the electroluminescent layer.

  10. Emission Characteristics of Organic Light-Emitting Diodes and Organic Thin-Films with Planar and Corrugated Structures

    Mao-Kuo Wei

    2010-04-01

    Full Text Available In this paper, we review the emission characteristics from organic light-emitting diodes (OLEDs and organic molecular thin films with planar and corrugated structures. In a planar thin film structure, light emission from OLEDs was strongly influenced by the interference effect. With suitable design of microcavity structure and layer thicknesses adjustment, optical characteristics can be engineered to achieve high optical intensity, suitable emission wavelength, and broad viewing angles. To increase the extraction efficiency from OLEDs and organic thin-films, corrugated structure with micro- and nano-scale were applied. Microstructures can effectively redirects the waveguiding light in the substrate outside the device. For nanostructures, it is also possible to couple out the organic and plasmonic modes, not only the substrate mode.

  11. Flexible white phosphorescent organic light emitting diodes based on multilayered graphene/PEDOT:PSS transparent conducting film

    Wu, Xiaoxiao; Li, Fushan, E-mail: fushanli@hotmail.com; Wu, Wei; Guo, Tailiang, E-mail: gtl_fzu@hotmail.com

    2014-03-01

    Highlights: • A double-layered graphene/PEDOT:PSS film was fabricated by spray-coating. • A white flexible phosphorescent OLED was fabricated based on this film. • The white flexible OLED presented pure white light emission. • The flexible OLEDs showed a stable white emission during bending test. - Abstract: A double-layered graphene/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) conductive film was prepared, in which the PEDOT:PSS layer was obtained by using spray-coating technique. A flexible white phosphorescent organic light-emitting devices based on the graphene/PEDOT:PSS conductive film was fabricated. Phosphorescent material tris(2-phenylpyridine) iridium (Ir(ppy){sub 3}) and the fluorescent dye 5,6,11,12-tetraphenylnapthacene (Rubrene) were co-doped into 4,4′-N,N′-dicarbazole-biphenyl (CBP) host. N,N′-diphenyl-N,N′-bis(1-naphthyl)-(1,1′-biphenyl)-4,4′-diamine (NPB) and 4,7-diphenyl-1,10-phenanthroline (Bphen) were used as hole-transporting and electron-transporting layer, respectively, and 4,4′-bis(2,2′-diphenylvinyl)-1,1′-biphenyl (DPVBi) was used as blue light-emitting layer. The device presented pure white light emission with a Commission Internationale De I’Eclairage coordinates of (0.31, 0.33) and exhibited an excellent light-emitting stability during the bending cycle test with a radius of curvature of 10 mm.

  12. Flexible white phosphorescent organic light emitting diodes based on multilayered graphene/PEDOT:PSS transparent conducting film

    Wu, Xiaoxiao; Li, Fushan; Wu, Wei; Guo, Tailiang

    2014-01-01

    Highlights: • A double-layered graphene/PEDOT:PSS film was fabricated by spray-coating. • A white flexible phosphorescent OLED was fabricated based on this film. • The white flexible OLED presented pure white light emission. • The flexible OLEDs showed a stable white emission during bending test. - Abstract: A double-layered graphene/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) conductive film was prepared, in which the PEDOT:PSS layer was obtained by using spray-coating technique. A flexible white phosphorescent organic light-emitting devices based on the graphene/PEDOT:PSS conductive film was fabricated. Phosphorescent material tris(2-phenylpyridine) iridium (Ir(ppy) 3 ) and the fluorescent dye 5,6,11,12-tetraphenylnapthacene (Rubrene) were co-doped into 4,4′-N,N′-dicarbazole-biphenyl (CBP) host. N,N′-diphenyl-N,N′-bis(1-naphthyl)-(1,1′-biphenyl)-4,4′-diamine (NPB) and 4,7-diphenyl-1,10-phenanthroline (Bphen) were used as hole-transporting and electron-transporting layer, respectively, and 4,4′-bis(2,2′-diphenylvinyl)-1,1′-biphenyl (DPVBi) was used as blue light-emitting layer. The device presented pure white light emission with a Commission Internationale De I’Eclairage coordinates of (0.31, 0.33) and exhibited an excellent light-emitting stability during the bending cycle test with a radius of curvature of 10 mm

  13. Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices

    Ana Luz Muñoz-Rosas

    2018-03-01

    Full Text Available Nowadays, the use of plasmonic metal layers to improve the photonic emission characteristics of several semiconductor quantum dots is a booming tool. In this work, we report the use of silicon quantum dots (SiQDs embedded in a silicon nitride thin film coupled with an ultra-thin gold film (AuNPs to fabricate light emitting devices. We used the remote plasma enhanced chemical vapor deposition technique (RPECVD in order to grow two types of silicon nitride thin films. One with an almost stoichiometric composition, acting as non-radiative spacer; the other one, with a silicon excess in its chemical composition, which causes the formation of silicon quantum dots imbibed in the silicon nitride thin film. The ultra-thin gold film was deposited by the direct current (DC-sputtering technique, and an aluminum doped zinc oxide thin film (AZO which was deposited by means of ultrasonic spray pyrolysis, plays the role of the ohmic metal-like electrode. We found that there is a maximum electroluminescence (EL enhancement when the appropriate AuNPs-spacer-SiQDs configuration is used. This EL is achieved at a moderate turn-on voltage of 11 V, and the EL enhancement is around four times bigger than the photoluminescence (PL enhancement of the same AuNPs-spacer-SiQDs configuration. From our experimental results, we surmise that EL enhancement may indeed be due to a plasmonic coupling. This kind of silicon-based LEDs has the potential for technology transfer.

  14. Fabrication and evaluation of green-light emitting Ta2O5:Er, Ce co-sputtered thin films

    K. Miura

    2015-01-01

    Full Text Available Erbium and cerium co-doped tantalum-oxide (Ta2O5:Er, Ce thin films were fabricated using radio-frequency co-sputtering of Ta2O5, Er2O3, and CeO2 for the first time. Enhanced green-light emission due to Er3+ that seems to be sensitized by Ce3+ was observed from the film annealed at 900 °C for 20 min. From XRD measurements of the films, the β-Ta2O5 (orthorhombic, δ-Ta2O5 (hexagonal, and (201 Ta2O5 phases seem to be very important for obtaining green PL from them. Such Ta2O5:Er, Ce co-sputtered films can be used as high-refractive-index materials of autocloned photonic crystals that can be applied to novel green-light-emitting devices, and they will also be used as multi-functional coating films that can work both as anti-reflection and down-conversion films for realizing high-efficiency silicon solar cells.

  15. Single-layer nano-carbon film, diamond film, and diamond/nano-carbon composite film field emission performance comparison

    Wang, Xiaoping; Wang, Jinye; Wang, Lijun

    2016-01-01

    A series of single-layer nano-carbon (SNC) films, diamond films, and diamond/nano-carbon (D/NC) composite films have been prepared on the highly doped silicon substrate by using microwave plasma chemical vapor deposition techniques. The films were characterised by scanning electron microscopy, Raman spectroscopy, and field emission I-V measurements. The experimental results indicated that the field emission maximum current density of D/NC composite films is 11.8–17.8 times that of diamond films. And the field emission current density of D/NC composite films is 2.9–5 times that of SNC films at an electric field of 3.0 V/μm. At the same time, the D/NC composite film exhibits the advantage of improved reproducibility and long term stability (both of the nano-carbon film within the D/NC composite cathode and the SNC cathode were prepared under the same experimental conditions). And for the D/NC composite sample, a high current density of 10 mA/cm"2 at an electric field of 3.0 V/μm was obtained. Diamond layer can effectively improve the field emission characteristics of nano-carbon film. The reason may be due to the diamond film acts as the electron acceleration layer.

  16. Highly transparent and conductive double-layer oxide thin films as anodes for organic light-emitting diodes

    Yang Yu; Wang Lian; Yan He; Jin Shu; Marks, Tobin J.; Li Shuyou

    2006-01-01

    Double-layer transparent conducting oxide thin film structures containing In-doped CdO (CIO) and Sn-doped In 2 O 3 (ITO) layers were grown on glass by metal-organic chemical vapor deposition and ion-assisted deposition (IAD), respectively, and used as anodes for polymer light-emitting diodes (PLEDs). These films have a very low overall In content of 16 at. %. For 180-nm-thick CIO/ITO films, the sheet resistance is 5.6 Ω/□, and the average optical transmittance is 87.1% in the 400-700 nm region. The overall figure of merit (Φ=T 10 /R sheet ) of the double-layer CIO/ITO films is significantly greater than that of single-layer CIO, IAD-ITO, and commercial ITO films. CIO/ITO-based PLEDs exhibit comparable or superior device performance versus ITO-based control devices. CIO/ITO materials have a much lower sheet resistance than ITO, rendering them promising low In content electrode materials for large-area optoelectronic devices

  17. A study of effects of electrode contacts on performance of organic-based light-emitting field-effect transistors

    Kim, Dae-Kyu; Choi, Jong-Ho

    2018-02-01

    Herein is presented a comparative performance analysis of heterojunction organic-based light-emitting field-effect transistors (OLEFETs) with symmetric (Au only) and asymmetric (Au and LiF/Al) electrode contacts. The devices had a top source-drain contact with long-channel geometry and were produced by sequentially depositing p-type pentacene and n-type N,N‧-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) using a neutral cluster beam deposition apparatus. The spectroscopic, structural and morphological properties of the organic thin films were examined using photoluminescence (PL) spectroscopy, X-ray diffraction (XRD) method, laser scanning confocal and atomic force microscopy (LSCM, AFM). Based upon the growth of high-quality, well-packed crystalline thin films, the devices demonstrated ambipolar field-effect characteristics, stress-free operational stability, and light emission under ambient conditions. Various device parameters were derived from the fits of the observed characteristics. The hole mobilities were nearly equal irrespective of the electrode contacts, whereas the electron mobilities of the transistors with LiF/Al drain electrodes were higher due to the low injection barrier. For the OLEFETs with symmetric electrodes, electroluminescence (EL) occurred only in the vicinity of the hole-injecting electrode, whereas for the OLEFETs with asymmetric electrodes, the emission occurred in the vicinity of both hole- and electron-injecting electrodes. By tuning the carrier injection and transport through high- and low-work function metals, the hole-electron recombination sites could be controlled. The operating conduction and light emission mechanism are discussed with the aid of EL images obtained using a charge-coupled device (CCD) camera.

  18. Evaluation of the electromagnetic field level emitted by medium frequency AM broadcast stations

    Licitra, G.; Bambini, S.; Barellini, A.; Monorchio, A.; Rogovich, A.

    2004-01-01

    In order to estimate the level of the electromagnetic field produced by telecommunication systems, different computational techniques can be employed whose complexity depends on the accuracy of the final results. In this paper, we present the validation of a code based on the method of moments that allows us to analyse the electromagnetic field emitted by radio-communication systems operating at medium frequencies. The method is able to provide an accurate estimate of the levels of electromagnetic field produced by this type of device and, consequently, it can be used as a method for verifying the compliance of the system with the safe exposure level regulations and population protection laws. Some numerical and experimental results are shown relevant to an amplitude modulated (AM) radio transmitter, together with the results of a forthcoming system that will be operative in the near future. (authors)

  19. Asymptotic behavior of local dipolar fields in thin films

    Bowden, G.J., E-mail: gjb@phys.soton.ac.uk [School of Physics and Astronomy, University of Southampton, SO17 1BJ (United Kingdom); Stenning, G.B.G., E-mail: Gerrit.vanderlaan@diamond.ac.uk [Magnetic Spectroscopy Group, Diamond Light Source, Didcot OX11 0DE (United Kingdom); Laan, G. van der, E-mail: gavin.stenning@stfc.ac.uk [ISIS Neutron and Muon Source, Rutherford Appleton Laboratory, Didcot OX11 0QX (United Kingdom)

    2016-10-15

    A simple method, based on layer by layer direct summation, is used to determine the local dipolar fields in uniformly magnetized thin films. The results show that the dipolar constants converge ~1/m where the number of spins in a square film is given by (2m+1){sup 2}. Dipolar field results for sc, bcc, fcc, and hexagonal lattices are presented and discussed. The results can be used to calculate local dipolar fields in films with either ferromagnetic, antiferromagnetic, spiral, exponential decay behavior, provided the magnetic order only changes normal to the film. Differences between the atomistic (local fields) and macroscopic fields (Maxwellian) are also examined. For the latter, the macro B-field inside the film is uniform and falls to zero sharply outside, in accord with Maxwell boundary conditions. In contrast, the local field for the atomistic point dipole model is highly non-linear inside and falls to zero at about three lattice spacing outside the film. Finally, it is argued that the continuum field B (used by the micromagnetic community) and the local field B{sub loc}(r) (used by the FMR community) will lead to differing values for the overall demagnetization energy. - Highlights: • Point-dipolar fields in uniformly magnetized thin films are characterized by just three numbers. • Maxwell's boundary condition is partially violated in the point-dipole approximation. • Asymptotic values of point dipolar fields in circular monolayers scale as π/r.

  20. Enhanced performance of GaN-based light-emitting diodes with graphene/Ag nanowires hybrid films

    Zhi Li

    2013-04-01

    Full Text Available Incorporating Ag nanowires with graphene resulted in improved electrical conductivity and enhanced contact properties between graphene and p-GaN. The graphene/AgNWs hybrid films exhibited high transmittance and lower sheet resistance compared to bare graphene. The specific contact resistance between graphene and p-GaN reduced nearly an order of magnitude with the introduction of AgNWs. As a result, light emitting diodes based on the hybrid films showed 44% lower forward voltage and 2-fold higher light output power. The enhanced performance was attributed to the bridging by AgNWs of cracks, grain boundaries in graphene and the reduction of Schottky barrier height at graphene/ p-GaN interface.

  1. Room-temperature synthesis of ultraviolet-emitting nanocrystalline GaN films using photochemical vapor deposition

    Yamazaki, Shunsuke; Yatsui, Takashi; Ohtsu, Motoichi; Kim, Taw-Won; Fujioka, Hiroshi

    2004-01-01

    We fabricated UV-emitting nanocrystalline gallium nitride (GaN) films at room temperature using photochemical vapor deposition (PCVD). For the samples synthesized at room temperature with V/III ratios exceeding 5.0x10 4 , strong photoluminescence peaks at 3.365 and 3.310 eV, which can be ascribed to transitions in a mixed phase of cubic and hexagonal GaN, were observed at 5 K. A UV emission spectrum with a full width at half-maximum of 100 meV was observed, even at room temperature. In addition, x-ray photoelectron spectroscopy measurement revealed that the film deposited by PCVD at room temperature was well nitridized

  2. Lifetime Improvement of Organic Light Emitting Diodes using LiF Thin Film and UV Glue Encapsulation

    Huang, Jian-Ji; Su, Yan-Kuin; Chang, Ming-Hua; Hsieh, Tsung-Eong; Huang, Bohr-Ran; Wang, Shun-Hsi; Chen, Wen-Ray; Tsai, Yu-Sheng; Hsieh, Huai-En; Liu, Mark O.; Juang, Fuh-Shyang

    2008-07-01

    This work demonstrates the use of lithium fluoride (LiF) as a passivation layer and a newly developed UV glue for encapsulation on the LiF passivation layer to enhance the stability of organic light-emitting devices (OLEDs). Devices with double protective layers showed a 25-fold increase in operational lifetime compared to those without any packaging layers. LiF has a low melting point and insulating characteristics and it can be adapted as both a protective layer and pre-encapsulation film. The newly developed UV glue has a fast curing time of only 6 s and can be directly spin-coated onto the surface of the LiF passivation layer. The LiF thin film plus spin-coated UV glue is a simple packaging method that reduces the fabrication costs of OLEDs.

  3. Effects of neutral particle beam on nano-crystalline silicon thin films, with application to thin film transistor backplane for flexible active matrix organic light emitting diodes

    Jang, Jin Nyoung; Song, Byoung Chul; Lee, Dong Hyeok; Yoo, Suk Jae; Lee, Bonju; Hong, MunPyo

    2011-01-01

    A novel deposition process for nano-crystalline silicon (nc-Si) thin films was developed using neutral beam assisted chemical vapor deposition (NBaCVD) technology for the application of the thin film transistor (TFT) backplane of flexible active matrix organic light emitting diode (AMOLED). During the formation of a nc-Si thin film, the energetic particles enhance nano-sized crystalline rather microcrystalline Si in thin films. Neutral Particle Beam (NPB) affects the crystallinity in two ways: (1) NPB energy enhances nano-crystallinity through kinetic energy transfer and chemical annealing, and (2) heavier NPB (such as Ar) induces damage and amorphization through energetic particle impinging. Nc-Si thin film properties effectively can be changed by the reflector bias. As increase of NPB energy limits growing the crystalline, the performance of TFT supports this NPB behavior. The results of nc-Si TFT by NBaCVD demonstrate the technical potentials of neutral beam based processes for achieving high stability and reduced leakage in TFT backplanes for AMOLEDs.

  4. Efficient Inorganic Perovskite Light-Emitting Diodes with Polyethylene Glycol Passivated Ultrathin CsPbBr3 Films.

    Song, Li; Guo, Xiaoyang; Hu, Yongsheng; Lv, Ying; Lin, Jie; Liu, Zheqin; Fan, Yi; Liu, Xingyuan

    2017-09-07

    Efficient inorganic perovskite light-emitting diodes (PeLEDs) with an ultrathin perovskite emission layer (∼30 nm) were realized by doping Lewis base polyethylene glycol (PEG) into CsPbBr 3 films. PEG in the perovskite films not only physically fills the crystal boundaries but also interacts with the perovskite crystals to passivate the crystal grains, reduce nonradiative recombination, and ensure efficient luminance and high efficiency. As a result, promoted brightness, current efficiency (CE), and external quantum efficiency (EQE) were achieved. The nonradiative decay rate of the PEG:CsPbBr 3 composite film is 1 order of magnitude less than that of the neat CsPbBr 3 film. After further optimization of the molar ratio between CsBr and PbBr 2 , a peak CE of 19 cd/A, a maximum EQE of 5.34%, and a maximum brightness of 36600 cd/m 2 were achieved, demonstrating the interaction between PEG and the precursors. The results are expected to offer some helpful implications in optimizing the polymer-assisted PeLEDs with ultrathin emission layers, which might have potential application in see-through displays.

  5. Optical spectroscopy and microscopy of radiation-induced light-emitting point defects in lithium fluoride crystals and films

    Montereali, R. M.; Bonfigli, F.; Menchini, F.; Vincenti, M. A.

    2012-08-01

    Broad-band light-emitting radiation-induced F2 and F3+ electronic point defects, which are stable and laser-active at room temperature in lithium fluoride crystals and films, are used in dosimeters, tuneable color-center lasers, broad-band miniaturized light sources and novel radiation imaging detectors. A brief review of their photoemission properties is presented, and their behavior at liquid nitrogen temperatures is discussed. Some experimental data from optical spectroscopy and fluorescence microscopy of these radiation-induced point defects in LiF crystals and thin films are used to obtain information about the coloration curves, the efficiency of point defect formation, the effects of photo-bleaching processes, etc. Control of the local formation, stabilization, and transformation of radiation-induced light-emitting defect centers is crucial for the development of optically active micro-components and nanostructures. Some of the advantages of low temperature measurements for novel confocal laser scanning fluorescence microscopy techniques, widely used for spatial mapping of these point defects through the optical reading of their visible photoluminescence, are highlighted.

  6. Very low roughness MAPLE-deposited films of a light emitting polymer: an alternative to spin coating

    Caricato, A P; Cesaria, M; Leo, C; Mazzeo, M; Genco, A; Tunno, T; Gigli, G; Martino, M; Carallo, S; Massafra, A

    2015-01-01

    The matrix assisted pulsed laser evaporation (MAPLE) technique is emerging as an alternative route to conventional deposition methods of organic materials (solution-phase and thermal evaporation approaches). However, the high surface roughness of the films deposited by MAPLE makes this technique not compatible with applications in electronics and photonics. In this paper we report the deposition of MAPLE-films of a green light emitting polymer, commercially named ADS125GE, with remarkable low roughness values, down to about 10 nm at the thickness conventionally used in photonic devices (∼40 nm). This issue is discussed as a function of polymer concentration, target-substrate distance and substrate rotation based on AFM topography images, roughness estimation and optical (absorption and luminescent) measurements. In addition we have fabricated an organic light emitting diode with this technique using the best deposition parameters which guarantee the lowest roughness. These results open the way to MAPLE applications in organic photonics and opto-electronics. (paper)

  7. Electric field induced instabilities in free emulsion films

    Tchoukov, P.; Dabros, T. [Natural Resources Canada, Devon, AB (Canada); Mostowfi, F. [Schlumberger DBR Technology Center, Edmonton, AB (Canada); Panchev, N. [Champion Technologies Inc., Houston, TX (United States); Czarnecki, J. [Alberta Univ., Edmonton, AB (Canada). Dept. of Chemical and Materials Engineering

    2009-07-01

    This presentation reported on a study that investigated the mechanism of electric field-induced breakdown of free emulsion films. Instability patterns were observed on the plane of a water-oil-water film following electric polarization. The length-scales of the instabilities were measured by analyzing images immediately after applying the electric field. Linear stability analysis was used to calculate the theoretical dominant wavelengths. The calculated values were found to be in good agreement with measured values. The films were formed in a thin film apparatus modified so that the oil film separated 2 aqueous phase compartments, each in contact with a platinum electrode. This enabled the measurement of disjoining pressure while applying the electric field to the film. It was concluded that breakdown of thin films induced by electric field has many applications, including electrostatic de-emulsification/desalination of crude oil and emulsion stability measurements. It was concluded that electroporation and dielectric breakdown may be responsible for electric field-induced breakdown. This study also presented evidence of an increase in electric field-induced instabilities in emulsion films resulting in rupture. tabs., figs.

  8. NUMERICAL SIMULATION OF MAGNETIC FIELD STRUCTURE IN CYLINDRICAL FILM SCREEN

    G. F. Gromyko

    2016-01-01

    Full Text Available A numerical method for solving the boundary value problem for a nonlinear magnetostatic equation describing the external magnetostatic field penetration through the cylindrical film coating is developed. A mathematical model of the shielding problem based on the use of the boundary conditions of the third kind on the film surface is studied. The nonlinear dependence of the film magnetic permeability on magnetic field conforms with experimental data. The distribution of the magnetic field strength in the film layer and the magnetic permeability of the film material depending on the magnitude of the external magnetic field strength are investigated numerically.

  9. The dynamic behavior of thin-film ionic transition metal complex-based light-emitting electrochemical cells

    Meier, Sebastian B., E-mail: sebastian.meier@belectric.com, E-mail: wiebke.sarfert@siemens.com [Department of Materials Science VI: Materials for Electronics and Energy Technology, Friedrich-Alexander-University of Erlangen-Nuremberg, 91058 Erlangen (Germany); Siemens AG, Corporate Technology, CT RTC MAT IEC-DE, 91058 Erlangen (Germany); Hartmann, David; Sarfert, Wiebke, E-mail: sebastian.meier@belectric.com, E-mail: wiebke.sarfert@siemens.com [Siemens AG, Corporate Technology, CT RTC MAT IEC-DE, 91058 Erlangen (Germany); Winnacker, Albrecht [Department of Materials Science VI: Materials for Electronics and Energy Technology, Friedrich-Alexander-University of Erlangen-Nuremberg, 91058 Erlangen (Germany)

    2014-09-14

    Light-emitting electrochemical cells (LECs) have received increasing attention during recent years due to their simple architecture, based on solely air-stabile materials, and ease of manufacture in ambient atmosphere, using solution-based technologies. The LEC's active layer offers semiconducting, luminescent as well as ionic functionality resulting in device physical processes fundamentally different as compared with organic light-emitting diodes. During operation, electrical double layers (EDLs) form at the electrode interfaces as a consequence of ion accumulation and electrochemical doping sets in leading to the in situ development of a light-emitting p-i-n junction. In this paper, we comment on the use of impedance spectroscopy in combination with complex nonlinear squares fitting to derive key information about the latter events in thin-film ionic transition metal complex-based light-emitting electrochemical cells based on the model compound bis-2-phenylpyridine 6-phenyl-2,2´-bipyridine iridium(III) hexafluoridophosphate ([Ir(ppy)₂(pbpy)][PF₆]). At operating voltages below the bandgap potential of the ionic complex used, we obtain the dielectric constant of the active layer, the conductivity of mobile ions, the transference numbers of electrons and ions, and the thickness of the EDLs, whereas the transient thickness of the p-i-n junction is determined at voltages above the bandgap potential. Most importantly, we find that charge transport is dominated by the ions when carrier injection from the electrodes is prohibited, that ion movement is limited by the presence of transverse internal interfaces and that the width of the intrinsic region constitutes almost 60% of the total active layer thickness in steady state at a low operating voltage.

  10. The pattern of the electromagnetic field emitted by mobile phones in motor vehicle driving simulators

    Piotr Politański

    2013-06-01

    Full Text Available Introduction: The paper reports the results of the determinations of UMTS EMF distributions in the driver's cab of motor vehicle simulators. The results will serve as the basis for future research on the influence of EMF emitted by mobile phones on driver physiology. Materials and Methods: Two motor vehicle driving simulators were monitored, while an EMF source was placed at the driver's head or on the dashboard of the motor vehicle driving simulator. For every applied configuration, the maximal electric field strength was measured, as were the values at 16 points corresponding to chosen locations on a driver's or passenger's body. Results: When the power was set for the maximum (49 mW, a value of 27 V/m was measured in the vicinity of the driver's head when the phone was close to the head. With the same power, when the phone was placed on the dashboard, the measured maximum was 15.2 V/m in the vicinity of the driver's foot. Similar results were obtained for the passenger. Significant perturbations in EMF distribution and an increase in electric field strength values in the motor vehicle driving simulator were also observed in comparison to free space measurements, and the electric field strength was up to 3 times higher inside the simulator. Conclusions: This study can act as the basis of future studies concerning the influence of the EMF emitted by mobile phones on the physiology of the driver. Additionally, the authors postulate that it is advisable to keep mobile phones at a distance from the head, i.e. use, whenever possible, hands-free kits to reduce EMF exposure, both for drivers and passengers.

  11. Field ion microscope studies on thin films

    Cavaleru, A.; Scortaru, A.

    1976-01-01

    A review of the progress made in the last years in FIM application to thin film structure studies and adatom properties important in the nucleation stage of thin film growth: substrate binding and mobility of individual adatoms, behaviour of adatoms clusters is presented. (author)

  12. Effects of high frequency electromagnetic field emitted from digital cellular telephones on electronic pocket dosimeters

    Shizuhiko, Deji; Kunihide, Nishizawa

    2002-01-01

    High frequency electromagnetic fields emitted from digital cellular telephones (cell phones) occasionally cause abnormally high values (wrong dosages) on electronic pocket dosimeters (EPD). Electric field strength distribution around the cell phone transmitting 1.5GHz band with a maximum power of 0.8 W was analyzed by using an isotropic probe with tri-axial dipole antennas. Five kinds of EPDs were exposed to the fields for 50s under four kinds of configurations relative to the cell phone. The electric field distribution expanded around the antenna and had a maximum strength level of 36.5 ± 0.30 V/m. The cell phone gave rise to a wrong dosage of four EPDs out of five. The electromagnetic susceptibility of the EPD was higher in the section where the semiconductor detector or electric circuit boards were implanted. The maximum value of wrong dosage was 1283μ Sv. The distance preventing electromagnetic interference differed in each EPD and ranged from 2.0cm to 21.0cm. The electromagnetic immunity levels of the EPDs were distributed from 9.2V/m to a value greater than 35V/m. The EPDs displayed wrong dosage during exposure, while they recovered their normal performance after the cell phone ceased transmitting. The electromagnetic immunity levels of the EPDs were either equal to or greater than the IEC-standard. The immunity levels should be enhanced greater than the IEC-standard from the standpoint of radiation protection

  13. Effects of high frequency electromagnetic field emitted from digital cellular telephones on electronic pocket dosimeters

    Shizuhiko, Deji; Kunihide, Nishizawa [Nagoya Univ., Nagoya (Japan)

    2002-07-01

    High frequency electromagnetic fields emitted from digital cellular telephones (cell phones) occasionally cause abnormally high values (wrong dosages) on electronic pocket dosimeters (EPD). Electric field strength distribution around the cell phone transmitting 1.5GHz band with a maximum power of 0.8 W was analyzed by using an isotropic probe with tri-axial dipole antennas. Five kinds of EPDs were exposed to the fields for 50s under four kinds of configurations relative to the cell phone. The electric field distribution expanded around the antenna and had a maximum strength level of 36.5 {+-} 0.30 V/m. The cell phone gave rise to a wrong dosage of four EPDs out of five. The electromagnetic susceptibility of the EPD was higher in the section where the semiconductor detector or electric circuit boards were implanted. The maximum value of wrong dosage was 1283{mu} Sv. The distance preventing electromagnetic interference differed in each EPD and ranged from 2.0cm to 21.0cm. The electromagnetic immunity levels of the EPDs were distributed from 9.2V/m to a value greater than 35V/m. The EPDs displayed wrong dosage during exposure, while they recovered their normal performance after the cell phone ceased transmitting. The electromagnetic immunity levels of the EPDs were either equal to or greater than the IEC-standard. The immunity levels should be enhanced greater than the IEC-standard from the standpoint of radiation protection.

  14. A Comparison Between Magnetic Field Effects in Excitonic and Exciplex Organic Light-Emitting Diodes

    Sahin Tiras, Kevser; Wang, Yifei; Harmon, Nicholas J.; Wohlgenannt, Markus; Flatte, Michael E.

    In flat-panel displays and lighting applications, organic light emitting diodes (OLEDs) have been widely used because of their efficient light emission, low-cost manufacturing and flexibility. The electrons and holes injected from the anode and cathode, respectively, form a tightly bound exciton as they meet at a molecule in organic layer. Excitons occur as spin singlets or triplets and the ratio between singlet and triplet excitons formed is 1:3 based on spin degeneracy. The internal quantum efficiency (IQE) of fluorescent-based OLEDs is limited 25% because only singlet excitons contribute the light emission. To overcome this limitation, thermally activated delayed fluorescent (TADF) materials have been introduced in the field of OLEDs. The exchange splitting between the singlet and triplet states of two-component exciplex systems is comparable to the thermal energy in TADF materials, whereas it is usually much larger in excitons. Reverse intersystem crossing occurs from triplet to singlet exciplex state, and this improves the IQE. An applied small magnetic field can change the spin dynamics of recombination in TADF blends. In this study, magnetic field effects on both excitonic and exciplex OLEDs will be presented and comparison similarities and differences will be made.

  15. Dependence of plasma treatment of ITO electrode films on electrical and optical properties of polymer light-emitting diodes

    Kim, Seung Ho; Baek, Seung Jun; Chang, Ho Jung; Chang, Young Chul

    2012-01-01

    Polymer light-emitting diodes (PLEDs) having indium tin oxide (ITO)/PEDOT:PSS [poly(3,4-ethylenedioxythiophene)-polystyrene sulfonate]/PVK [poly-vinylcarbazole]:PFO-poss [poly(9,9-dioctylfluorene) end capped by polyhedral oligomeric silsesquioxane]/TPBI [2,2',2''-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)]/LiF/Al structures were prepared on plasma-treated ITO/glass substrates using spin-coating and thermal evaporation methods. The effects of the plasma treatment on the ITO films to the optical and electrical properties of the PLEDs were examined. The sheet resistance of the ITO films decreased with an increasing radio frequency (RF) plasma intensity from 20 to 200 W under a 20 mTorr Ar + O 2 gas (50:50 vol.%) pressure. The work function of the ITO films without plasma treatment was 4.97 eV, and increased to about 5.16-5.23 eV after the plasma treatment of the films. The surface roughness improved with increasing plasma intensities. The luminance and current efficiency of the PLEDs were improved when the devices were prepared on the plasma-treated ITO/glass substrates. The maximum current density and luminance for the PLEDs was obtained at a 150-W RF plasma intensity; they were 310 mA cm -2 and 2535 cd m -2 at 9 V, respectively. The Commission Internationale d'Eclairage (CIE) color coordinates were found to be x, y = 0.17, 0.06-0.07, showing a good blue color. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. 3.4-Inch Quarter High Definition Flexible Active Matrix Organic Light Emitting Display with Oxide Thin Film Transistor

    Hatano, Kaoru; Chida, Akihiro; Okano, Tatsuya; Sugisawa, Nozomu; Inoue, Tatsunori; Seo, Satoshi; Suzuki, Kunihiko; Oikawa, Yoshiaki; Miyake, Hiroyuki; Koyama, Jun; Yamazaki, Shunpei; Eguchi, Shingo; Katayama, Masahiro; Sakakura, Masayuki

    2011-03-01

    In this paper, we report a 3.4-in. flexible active matrix organic light emitting display (AMOLED) display with remarkably high definition (quarter high definition: QHD) in which oxide thin film transistors (TFTs) are used. We have developed a transfer technology in which a TFT array formed on a glass substrate is separated from the substrate by physical force and then attached to a flexible plastic substrate. Unlike a normal process in which a TFT array is directly fabricated on a thin plastic substrate, our transfer technology permits a high integration of high performance TFTs, such as low-temperature polycrystalline silicon TFTs (LTPS TFTs) and oxide TFTs, on a plastic substrate, because a flat, rigid, and thermally-stable glass substrate can be used in the TFT fabrication process in our transfer technology. As a result, this technology realized an oxide TFT array for an AMOLED on a plastic substrate. Furthermore, in order to achieve a high-definition AMOLED, color filters were incorporated in the TFT array and a white organic light-emitting diode (OLED) was combined. One of the features of this device is that the whole body of the device can be bent freely because a source driver and a gate driver can be integrated on the substrate due to the high mobility of an oxide TFT. This feature means “true” flexibility.

  17. Fabricating ZnO single microwire light-emitting diode with transparent conductive ITO film

    Xu, Yingtian; Dai, Jun; Shi, Zhifeng; Long, Beihong; Wu, Bin; Cai, Xupu; Chu, Xianwei; Du, Guotong; Zhang, Baolin; Yin, Jingzhi

    2014-01-01

    In this paper, n-ZnO single microwire/p + -Si heterojunction LEDs are fabricated using the transparent conductive ITO film as an electrode. A distinct UV emission resulting from free exciton recombination in a ZnO single microwire is observed in the electroluminescence. Size difference of ZnO single microwire shows significant influence on emission efficiency. The EL spectra of n-ZnO single microwire/p-Si heterostructure exhibited relatively stronger UV emission which was compared with the EL spectra of n-ZnO single nanowire/p-Si heterostructure and n-ZnO film/p-Si heterostructure, respectively. - Highlights: • The ZnO microwires were synthesized with a vapor phase transport method. • ZnO single microwire/Si LEDs were fabricated using the ITO film as an electrode. • The EL spectra had been compared with n-ZnO film/p-Si heterostructure. • The EL spectra had been compared with n-ZnO single nanowire/p-Si heterostructure

  18. Critical fields of niobium nitride films of various granularity

    Antonova, E.A.; Sukhov, V.A.

    1983-01-01

    The behaviour of lattice parameter, specific electrical resistivity, critical temperature, and temperature dependence of upper critical field near Tsub(cr) of sputtered niobium nitride films is investigated versus the substrate temperature and gas mixture composition in the process of reactive cathode sputtering. The relation between extrapolated value of the upper critical field and granularity of niobium nitride films, close as to composition to the stoichiometric one, has been found. Values of the kappa parameter of the Ginsburg-Landau theory and of the coherence length for niobium nitride films of various granularity are estimated in an approximation of uniform distribution of impurities in a sample

  19. Recent developments for field monitoring of alpha-emitting contaminants in the environment

    Ahlquist, A.J.; Umbarger, C.J.; Stoker, A.K.

    1978-01-01

    The Los Alamos Scientific Laboratory has adapted two field methods to assess rapidly locations and concentrations of alpha-emitting contaminants in soil. (1) A ZnS scintillator is used for gross-alpha measurements on soil samples. Sample preparation and the calibration and detection limits of the system are discussed, and results of gross-alpha analysis are compared with results of a 239 Pu radiochemistry analysis. (2) A Phoswich detector is used as a field survey instrument because it can detect lower levels of radioactivity than the FIDLER probe. The electronics are carried in a truck and the probe is connected by an umbilical cord. The system electronics are calibrated with an energy window of 12-40 keV which allows detection of Pu, Am, Th (using daughter L X-rays of the alpha-emitters) and 137 Cs (using its daughter 32 keV X-rays). The bremsstrahlung from 90 Sr can also be detected. (author)

  20. Enhanced performance of organic light-emitting devices by using electropolymerized poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) film as the anode modification layer

    Liu Xiaona [Graduate University of Chinese Academy of Sciences, Beijing 100049 (China); Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Yan Jun [Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Meng Lingchuan [Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Sun Chenghua; Hu Xiujie; Chen Ping [Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Zhou Shuyun, E-mail: zhou_shuyun@mail.ipc.ac.cn [Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Teng Feng [Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China)

    2012-01-31

    Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) films were prepared by electropolymerization on patterned indium tin oxide substrates in isopropanol solution. The thickness and doping level of the PEDOT:PSS films were controlled by adjusting the electropolymerization time and the concentration of poly(styrene sulfonate) acid, respectively. Organic light-emitting diodes were fabricated using the electropolymerized PEDOT:PSS film as the anode modification layer. The dependence of the performance on thickness of PEDOT:PSS films was investigated. It is shown that the performance of the device can be further enhanced when the thickness of PEDOT:PSS films reached an optimum condition. This method facilitates manufacturing procedures of conducting polymers films and may offer an economical route for producing organic electroluminescent devices.

  1. Systematic discrepancies in Monte Carlo predictions of k-ratios emitted from thin films on substrates

    Statham, P; Llovet, X; Duncumb, P

    2012-01-01

    We have assessed the reliability of different Monte Carlo simulation programmes using the two available Bastin-Heijligers databases of thin-film measurements by EPMA. The MC simulation programmes tested include Curgenven-Duncumb MSMC, NISTMonte, Casino and PENELOPE. Plots of the ratio of calculated to measured k-ratios ('k calc /k meas ') against various parameters reveal error trends that are not apparent in simple error histograms. The results indicate that the MC programmes perform quite differently on the same dataset. However, they appear to show a similar pronounced trend with a 'hockey stick' shape in the 'k calc /k meas versus k meas ' plots. The most sophisticated programme PENELOPE gives the closest correspondence with experiment but still shows a tendency to underestimate experimental k-ratios by 10 % for films that are thin compared to the electron range. We have investigated potential causes for this systematic behaviour and extended the study to data not collected by Bastin and Heijligers.

  2. Electric field mapping inside metallized film capacitors

    Nielsen, Dennis Achton; Popok, Vladimir; Pedersen, Kjeld

    2015-01-01

    (s) they suffered from accelerated testing. We have prepared film capacitors for analysis by micro-sectioning and verified the quality of the preparation procedure using optical and atomic force microscopy. The potential distribution in the layer structure (alternating 7 µm thick dielectric and 50-100 nm thick...... and durability and serves as verification that failure- and degradation mechanisms remain the same at different stress levels during accelerated testing. In this work we have used Kelvin probe force microscopy (KPFM) to analyze metallized film capacitors with the purpose of determining the degradation mechanism...... metal) of a new capacitor was used as reference. KPFM measurements on the degraded capacitors showed a change in contact potential difference from -0.61V on the reference capacitor to 3.2V on the degraded ones, indicating that corrosion of the metallization had happened. Studies also showed that some...

  3. Growth and characterizations of GaN micro-rods on graphene films for flexible light emitting diodes

    Kunook Chung

    2014-09-01

    Full Text Available We report the growth of GaN micro-rods and coaxial quantum-well heterostructures on graphene films, together with structural and optical characterization, for applications in flexible optical devices. Graphene films were grown on Cu foil by means of chemical vapor deposition, and used as the substrates for the growth of the GaN micro-rods, which were subsequently transferred onto SiO2/Si substrates. Highly Si-doped, n-type GaN micro-rods were grown on the graphene films using metal–organic chemical vapor deposition. The growth and vertical alignment of the GaN micro-rods, which is a critical factor for the fabrication of high-performance light-emitting diodes (LEDs, were characterized using electron microscopy and X-ray diffraction. The GaN micro-rods exhibited promising photoluminescence characteristics for optoelectronic device applications, including room-temperature stimulated emission. To fabricate flexible LEDs, InxGa1–xN/GaN multiple quantum wells and a p-type GaN layer were deposited coaxially on the GaN micro-rods, and transferred onto Ag-coated polymer substrates using lift-off. Ti/Au and Ni/Au metal layers were formed to provide electrical contacts to the n-type and p-type GaN regions, respectively. The micro-rod LEDs exhibited intense emission of visible light, even after transfer onto the flexible polymer substrate, and reliable operation was achieved following numerous cycles of mechanical deformation.

  4. Population exposure to electromagnetic fields emitted by 'communicating meters'. Anses opinion. Collective expertise report

    Ndagijimana, Fabien; Agnani, Jean-Benoit; Deltour, Isabelle; Dore, Jean-Francois; Ducimetiere, Pierre; Draetta, Laura; Gaudaire, Francois; Marchand, Dorothee; Martinsons, Christophe; Hours, Martine; Lelong, Joel; Bounouh, Alexandre; Feltin, Nicolas; Douki, Thierry; Flahaut, Emmanuel; Lafaye, Murielle; Moati, Frederique; Mouneyrac, Catherine; Soyez, Alain; Toppila, Esko; Yardin, Catherine; Huret, Fanny; Merckel, Olivier; Saddoki, Sophia; Gauthier, Mathieu; Tavner, Bastien; Debuire, Brigitte

    2016-10-01

    This document first presents the opinion of the Anses (the French National Agency for food, environment and work safety) about the assessment of the exposure to electromagnetic fields emitted by communicating meters. This opinion and some associated recommendations are based on the content of the study report which is thereafter presented. This report first proposes a presentation of the context, objective, implemented method and organisation of this study, and a focus on how interest conflicts have been avoided. The next chapters presents some other aspects related to the deployment of these meters: European and French legal framework, normative framework, historical overview and current status of this deployment in France, in the European Union and abroad. The report also addresses and comments some controversies about these meters: the public controversy about Linky in France (literature overview, nature and actors of the controversy, dynamics about health issue), a legal conflict about the ownership and management of the Linky meters in France, and a case of controversy in Quebec (Canada). Technical descriptions of different communicating meters are then presented: Linky with the CPL or PLC technology, and Gazpar and water meters using a radio technology. The authors report measurements performed by EDF, public bodies and other actors, and also measurements performed in Finland of the exposure in the case of PLC meters, radio-wave-based meters and concentrators. Based on these exposure data, an assessment of health effect is proposed, followed by conclusions and recommendations

  5. Acute effects of radiofrequency electromagnetic field emitted by mobile phone on brain function.

    Zhang, Jun; Sumich, Alexander; Wang, Grace Y

    2017-07-01

    Due to its attributes, characteristics, and technological resources, the mobile phone (MP) has become one of the most commonly used communication devices. Historically, ample evidence has ruled out the substantial short-term impact of radiofrequency electromagnetic field (RF-EMF) emitted by MP on human cognitive performance. However, more recent evidence suggests potential harmful effects associated with MP EMF exposure. The aim of this review is to readdress the question of whether the effect of MP EMF exposure on brain function should be reopened. We strengthen our argument focusing on recent neuroimaging and electroencephalography studies, in order to present a more specific analysis of effects of MP EMF exposure on neurocognitive function. Several studies indicate an increase in cortical excitability and/or efficiency with EMF exposure, which appears to be more prominent in fronto-temporal regions and has been associated with faster reaction time. Cortical excitability might also underpin disruption to sleep. However, several inconsistent findings exist, and conclusions regarding adverse effects of EMF exposure are currently limited. It also should be noted that the crucial scientific question of the effect of longer-term MP EMF exposure on brain function remains unanswered and essentially unaddressed. Bioelectromagnetics. 38:329-338, 2017. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

  6. Influence of heterojunction interface on exciplex emission from organic light-emitting diodes under electric fields

    Yang, Shengyi; Zhang, Xiulong; Lou, Zhidong; Hou, Yanbing [Beijing Jiaotong University, Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing (China)

    2008-03-15

    In this paper, electroluminescence from organic light-emitting diodes based on 2-(4'-biphenyl)-5-(4{sup ''}-tert-butylphenyl)-1,3,4-oxadiazole (PBD) and N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD) is reported. Based on the exciplex emission from the TPD/PBD interface under high electric fields, the influence of the TPD/PBD interface on exciplex emission was investigated by increasing the number of TPD/PBD interfaces while keeping both the total thickness of the TPD layer and the PBD layer constant in the multiple quantum-wells (MQW) device ITO/TPD/[PBD/TPD]{sub n}/PBD/Al (n is the well number that was varied from 0 to 3). Our experimental data shows that exciplex emission can be enhanced by suitably increasing the well number of this kind of MQW-like device. (orig.)

  7. Wet chemical preparation of YVO{sub 4}:Eu thin films as red-emitting phosphor layers for fully transparent flat dielectric discharge lamp

    Klausch, A. [Institute for Inorganic Chemistry, Dresden University of Technology, Mommsenstr. 6, 01069 Dresden (Germany); Althues, H. [Fraunhofer Institute for Material and Beam Technology Winterbergstr. 28, 01309 Dresden (Germany); Freudenberg, T. [Leibniz Institute for Solid State and Materials Research, Helmholtzstrasse 20, 01069 Dresden (Germany); Kaskel, S., E-mail: Stefan.Kaskel@chemie.tu-dresden.de [Institute for Inorganic Chemistry, Dresden University of Technology, Mommsenstr. 6, 01069 Dresden (Germany)

    2012-04-30

    Highly transparent YVO{sub 4}:Eu thin films were deposited via dip coating of liquid nanoparticle dispersions on glass substrates. Annealing of the nanoparticle layers resulted in restructuring of the material into oriented crystalline films. The crystallinity was confirmed using powder X-ray diffraction. Film thickness was adjusted to 467 nm by multiple deposition. The resulting coatings show > 99% absorbance for wavelength below 300 nm and > 90% transmission in the visible spectral range. Under UV-light excitation a bright red photoluminescence with a quantum efficiency of 20% is observed. A planar, transparent dielectric barrier discharge lamp was constructed using YVO{sub 4}:Eu coated glasses and transparent electrodes made from antimony-doped tin dioxide thin films. - Highlights: Black-Right-Pointing-Pointer Preparation of highly transparent Eu{sup 3+} doped YVO{sub 4} phosphor thin films. Black-Right-Pointing-Pointer Improved crystallinity and optical properties through heat treatment. Black-Right-Pointing-Pointer Red emitting films on glass substrates were combined with antimony tin oxide thin films. Black-Right-Pointing-Pointer Fully transparent, planar gas discharge lamp as prototype for a light emitting window.

  8. Transparent conductive oxide films embedded with plasmonic nanostructure for light-emitting diode applications.

    Chuang, Shih-Hao; Tsung, Cheng-Sheng; Chen, Ching-Ho; Ou, Sin-Liang; Horng, Ray-Hua; Lin, Cheng-Yi; Wuu, Dong-Sing

    2015-02-04

    In this study, a spin coating process in which the grating structure comprises an Ag nanoparticle layer coated on a p-GaN top layer of InGaN/GaN light-emitting diode (LED) was developed. Various sizes of plasmonic nanoparticles embedded in a transparent conductive layer were clearly observed after the deposition of indium tin oxide (ITO). The plasmonic nanostructure enhanced the light extraction efficiency of blue LED. Output power was 1.8 times the magnitude of that of conventional LEDs operating at 350 mA, but retained nearly the same current-voltage characteristic. Unlike in previous research on surface-plasmon-enhanced LEDs, the metallic nanoparticles were consistently deposited over the surface area. However, according to microstructural observation, ITO layer mixed with Ag-based nanoparticles was distributed at a distance of approximately 150 nm from the interface of ITO/p-GaN. Device performance can be improved substantially by using the three-dimensional distribution of Ag-based nanoparticles in the transparent conductive layer, which scatters the propagating light randomly and is coupled between the localized surface plasmon and incident light internally trapped in the LED structure through total internal reflection.

  9. Resistance switching induced by electric fields in manganite thin films

    Villafuerte, M; Juarez, G; Duhalde, S; Golmar, F; Degreef, C L; Heluani, S P

    2007-01-01

    In this work, we investigate the polarity-dependent Electric Pulses Induced Resistive (EPIR) switching phenomenon in thin films driven by electric pulses. Thin films of 0.5 Ca 0.5 MnO 3 (manganite) were deposited by PLD on Si substrate. The transport properties at the interface between the film and metallic electrode are characterized in order to study the resistance switching. Sample thermal treatment and electrical field history are important to be considered for get reproducible EPIR effect. Carriers trapping at the interfaces are considered as a possible explanation of our results

  10. Intrinsic graphene field effect transistor on amorphous carbon films

    Tinchev, Savcho

    2013-01-01

    Fabrication of graphene field effect transistor is described which uses an intrinsic graphene on the surface of as deposited hydrogenated amorphous carbon films. Ambipolar characteristic has been demonstrated typical for graphene devices, which changes to unipolar characteristic if the surface graphene was etched in oxygen plasma. Because amorphous carbon films can be growth easily, with unlimited dimensions and no transfer of graphene is necessary, this can open new perspective for graphene ...

  11. Field Experiments on SAR Detection of Film Slicks

    Ermakov, S.; da Silva, J. C. B.; Kapustin, I.; Sergievskaya, I.

    2013-03-01

    Field experiments on radar detection of film slicks using satellite synthetic aperture radar TerraSAR-X and X-band scatterometer on board a research vessel are described. The experiments were carried out with surfactant films with known physical parameters, the surface tension and the film elasticity, at low to moderate wind conditions and at different radar incidence angles. It is shown that the depression of radar backscatter (contrast) in films slicks for X-band SAR weakly depends on wind velocity/direction, film elasticity and incidence angles within the range of 200-400. Scatterometer contrasts obtained at incidence angles of about 600 are larger than SAR contrasts. Theoretical analysis of radar contrasts for low-to-moderate incidence angles has been carried out based on a hydrodynamic model of wind wave damping due to films and on a composite radar imaging model. The hydrodynamic model takes into account wave damping due to viscoelastic films, wind wave generation and a phenomenological term describing nonlinear limitation of the wind wave spectrum. The radar model takes into account Bragg scattering and specular scattering mechanisms, the latter is usually negligible compared to the Bragg mechanism at moderate incidence angles (larger than 30-35 degrees), but gives noticeable contribution to radar backscattering at smaller incidence angles particularly for slick areas when cm-scale ripples are strongly depressed by films. Calculated radar contrasts in slicks are compared with experiments and it is concluded that development of the model is needed to predict quantitatively observations.

  12. Control of Flowing Liquid Films By Electrostatic Fields in Space

    Bankoff, S. George; Miksis, Michael J.; Kim, Hyo

    1996-01-01

    A novel type of lightweight space radiator has been proposed which employs internal electrostatic fields to stop coolant leaks from punctures caused by micrometeorites or space debris. Extensive calculations have indicated the feasibility of leak stoppage without film destabilization for both stationary and rotating designs. Solutions of the evolution equation for a liquid-metal film on an inclined plate, using lubrication theory for low Reynolds numbers, Karman-Pohlhausen quadratic velocity profiles for higher Reynolds numbers, and a direct numerical solution are shown. For verification an earth-based falling-film experiment on a precisely-vertical wall with controllable vacuum on either side of a small puncture is proposed. The pressure difference required to start and to stop the leak, in the presence and absence of a strong electric field, will be measured and compared with calculations. Various parameters, such as field strength, film Reynolds number, contact angle, and hole diameter will be examined. A theoretical analysis will be made of the case where the electrode is close enough to the film surface that the electric field equation and the surface dynamics equations are coupled. Preflight design calculations will be made in order to transfer the modified equipment to a flight experiment.

  13. Effect of sputtered lanthanum hexaboride film thickness on field emission from metallic knife edge cathodes

    Kirley, M. P.; Novakovic, B.; Sule, N.; Weber, M. J.; Knezevic, I.; Booske, J. H.

    2012-03-01

    We report experiments and analysis of field emission from metallic knife-edge cathodes, which are sputter-coated with thin films of lanthanum hexaboride (LaB6), a low-work function material. The emission current is found to depend sensitively on the thickness of the LaB6 layer. We find that films thinner than 10 nm greatly enhance the emitted current. However, cathodes coated with a thicker layer of LaB6 are observed to emit less current than the uncoated metallic cathode. This result is unexpected due to the higher work function of the bare metal cathode. We show, based on numerical calculation of the electrostatic potential throughout the structure, that the external (LaB6/vacuum) barrier is reduced with respect to uncoated samples for both thin and thick coatings. However, this behavior is not exhibited at the internal (metal/LaB6) barrier. In thinly coated samples, electrons tunnel efficiently through both the internal and external barrier, resulting in current enhancement with respect to the uncoated case. In contrast, the thick internal barrier in thickly coated samples suppresses current below the value for uncoated samples in spite of the lowered external barrier. We argue that this coating thickness variation stems from a relatively low (no higher than 1018 cm-3) free carrier density in the sputtered polycrystalline LaB6.

  14. Fluxon induced surface resistance and field emission in niobium films at 1.5 GHz

    Benvenuti, Cristoforo; Darriulat, Pierre; Peck, M A; Valente, A M; Van't Hof, C A

    2001-01-01

    The surface resistance of superconducting niobium films induced by the presence of trapped magnetic flux, presumably in the form of a pinned fluxon lattice, is shown to be modified by the presence of a field emitting impurity or defect. The modification takes the form of an additional surface resistance proportional to the density of the fluxon lattice and increasing linearly with the amplitude of the microwave above a threshold significantly lower than the field emission threshold. Such an effect, a precursor of electron emission, is observed for the first time in a study using radiofrequency cavities operating at their fundamental 1.5 GHz frequency. The measured properties of the additional surface resistance severely constrain possible explanations of the observed effect. (23 refs).

  15. Upper critical field of NbN film

    Ashkin, M.; Gavaler, J.R.

    1978-01-01

    It is proposed and experimentally verified that the anomalously high superconducting critical field normal to the surface of NbN films possessing a column-void microstructure is H/sub c3/, the field appropriate for surface superconductivity. It is also proposed that because the coherence length is much less than the lateral column dimension that the resistivity of the column and not the film enters calculations of the Maki parameter α. A previously noted discrepancy in α is removed by these proposals

  16. Terahertz-field-induced photoluminescence of nanostructured gold films

    Iwaszczuk, Krzysztof; Malureanu, Radu; Zalkovskij, Maksim

    2013-01-01

    We experimentally demonstrate photoluminescence from nanostructured ultrathin gold films subjected to strong single-cycle terahertz transients with peak electric field over 300 kV/cm. We show that UV-Vis-NIR light is being generated and the efficiency of the process is strongly enhanced at the pe......We experimentally demonstrate photoluminescence from nanostructured ultrathin gold films subjected to strong single-cycle terahertz transients with peak electric field over 300 kV/cm. We show that UV-Vis-NIR light is being generated and the efficiency of the process is strongly enhanced...

  17. Preparation and luminescence of green-emitting ZnAl{sub 2}O{sub 4}:Mn{sup 2+} phosphor thin films

    Huang, Ing-Bang [Department of Materials Science and Engineering, National Formosa University, Huwei, Yunlin 632, Taiwan (China); Chang, Yee-Shin [Department of Electronic Engineering, National Formosa University, Huwei, Yunlin 632, Taiwan (China); Chen, Hao-Long [Department of Electronic Engineering, Kao Yuan University, Lujhu, Kaohsiung 821, Taiwan (China); Hwang, Ching Chiang [Department of Biotechnology, Mingdao University, Chang-Hua 52345, Taiwan (China); Jian, Chen-Jhu; Chen, Yu-Shiang [Department of Materials Science and Engineering, National Formosa University, Huwei, Yunlin 632, Taiwan (China); Tsai, Mu-Tsun, E-mail: mttsai@ms23.hinet.net [Department of Materials Science and Engineering, National Formosa University, Huwei, Yunlin 632, Taiwan (China)

    2014-11-03

    Nanocrystalline Mn{sup 2+}-doped zinc spinel (ZnAl{sub 2}O{sub 4}:Mn{sup 2+}) green-emitting phosphor films were deposited on silicon substrate by sol–gel spin coating and subsequent heat treatment up to 1000 °C. The effects of dopant concentration and heat treatment on the optical and structural properties were investigated. The variations in sol viscosity with time, film thickness with number of layers were also examined. Thin films were characterized by X-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy, energy-dispersive X-ray microscopy, atomic force microscopy, and photoluminescence spectrum. Single-phase ZnAl{sub 2}O{sub 4} started to crystallize at around 600 °C, with a normal spinel structure. On annealing at 1000 °C, the films had smooth surfaces with a nanocrystalline structure. Under UV or visible light excitation, the phosphor films exhibited an intense green emission band peaking at around 512 nm, corresponding to the typical {sup 4}T{sub 1} → {sup 6}A{sub 1} transition of tetrahedral Mn{sup 2+} ions. The most intense green emission was obtained by exciting at 456 nm. The emission intensity of films was highly dependent upon the excitation wavelength, crystallinity, dopant content, and deposition conditions. The results show that the ZnAl{sub 2}O{sub 4}:Mn{sup 2+} films have good potential for use as a green phosphor for displays and/or white light-emitting diodes. - Highlights: • ZnAl2O4:Mn2 + thin film phosphors have been synthesized by a sol–gel process. • The most intense green emission was obtained by exciting at 456 nm. • Photoluminescence is highly dependent on the crystallinity and doping content. • Emission intensity can also be modulated by controlling the film thickness.

  18. Specific feature of critical fields of inhomogeneous superconducting films

    Glazman, L.I.; Dmitrenko, I.M.; Kolin'ko, A.E.; Pokhila, A.S.; Fogel', N.Ya.; Cherkasova, V.G.

    1988-01-01

    Experimental studies on thin vanadium films (d=250-400 A) have revealed anomaly in the temperature dependence of the upper critical field H cparallel (T), when H is parallel to the sample plane. At certain temperature T 0 the dependence H cparallel 2 (T) has a sharp kink separating two linear portions. The anomalous behaviour of H cparallel (T) of thin V films can be accounted for assuming the film separation into two parallel layers having different parameters (critical temperature T c , coherence length ξ, thickness d). At temperatures above and lower T 0 the dependence H cparallel (T) is mainly dependent on the characteristics of only one layer. The kink in the dependence H cparallel 2 (T) is due to a jump-like transition of the superconducting nucleus from one layer to the other at T c . The anomalous behaviour of the dependence H cparallel (T) is also observed in sandwiches consisting of two identical films separated with a high (about 30 A) dielectric interlayer; however, the transition from one linear portion to the other is smooth. In the case of identical films a specific crossover occurs if at T-T c the critical field H cparallel (T) coinsides with that for the layer of doubled thickness, then at lowering temperature H cparallel (T) asymptotically approaches the critical field of one layer. The calculation within the model described provides a good description for the experimental results

  19. Electron field emission from undoped and doped DLC films

    Chakhovskoi, A G; Evtukh, A A; Felter, T E; Klyui, N I; Kudzinovsky, S Y; Litovchenko, V G; Litvin, Y M

    1999-01-01

    Electron field emission and electrical conductivity of undoped and nitrogen doped DLC films have been investigated. The films were grown by the PE CVD method from CH(sub 4):H(sub 2) and CH(sub 4):H(sub 2):N(sub 2) gas mixtures, respectively. By varying nitrogen content in the gas mixture over the range 0 to 45%, corresponding concentrations of 0 to 8% (atomic) could be achieved in the films. Three different gas pressures were used in the deposition chamber: 0.2, 0.6 and 0.8 Torr. Emission current measurements were performed at approximately 10(sup -6) Torr using the diode method with emitter-anode spacing set at 20(micro)m. The current - voltage characteristics of the Si field electron emission arrays covered with DLC films show that threshold voltage (V(sub th)) varies in a complex manner with nitrogen content. As a function of nitrogen content, V(sub th) initially increases rapidly, then decreases and finally increases again for the highest concentration. Corresponding Fowler-Nordheim (F-N) plots follow F-N tunneling over a wide range. The F-N plots were used for determination of the work function, threshold voltage, field enhancement factor and effective emission area. For a qualitative explanation of experimental results, we treat the DLC film as a diamond-like (sp(sup 3) bonded) matrix with graphite-like inclusions

  20. Highly Conductive PEDOT:PSS Films with 1,3-Dimethyl-2-Imidazolidinone as Transparent Electrodes for Organic Light-Emitting Diodes.

    Kim, Jin Hee; Joo, Chul Woong; Lee, Jonghee; Seo, Yoon Kyung; Han, Joo Won; Oh, Ji Yoon; Kim, Jong Su; Yu, Seunggun; Lee, Jae Hyun; Lee, Jeong-Ik; Yun, Changhun; Choi, Bum Ho; Kim, Yong Hyun

    2016-09-01

    Highly conductive poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PSS) films as transparent electrodes for organic light-emitting diodes (OLEDs) are doped with a new solvent 1,3-dimethyl-2-imidazolidinone (DMI) and are optimized using solvent post-treatment. The DMI doped PSS films show significantly enhanced conductivities up to 812.1 S cm(-1) . The sheet resistance of the PSS films doped with DMI is further reduced by various solvent post-treatment. The effect of solvent post-treatment on DMI doped PSS films is investigated and is shown to reduce insulating PSS in the conductive films. The solvent posttreated PSS films are successfully employed as transparent electrodes in white OLEDs. It is shown that the efficiency of OLEDs with the optimized DMI doped PSS films is higher than that of reference OLEDs doped with a conventional solvent (ethylene glycol). The results present that the optimized PSS films with the new solvent of DMI can be a promising transparent electrode for low-cost, efficient ITO-free white OLEDs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Reduced Graphene Oxide/Single-Walled Carbon Nanotube Hybrid Films Using Various p-Type Dopants and Their Application to GaN-Based Light-Emitting Diodes.

    Lee, Byeong Ryong; Kim, Tae Geun

    2017-01-01

    This article reports the electrical and optical properties of the reduced graphene oxide (RGO)/single-walled carbon nanotube (SWCNT) films using various p-type dopants and their application to GaN-based light-emitting diodes. To enhance the current injection and spreading of the RGO/SWCNT films on the light-emitting diodes (LEDs), we increased the work function (Φ) of the films using chemical doping with AuCl₃, poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) (PEDOT:PSS) and MoO₃; thereby reduced the Schottky barrier height between the RGO/SWCNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWCNT film doped with MoO₃ exhibited the decrease of the forward voltage from 5.3 V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.

  2. Reduced Graphene Oxide/Single-Walled Carbon Nanotube Hybrid Film Using Various p-Type Dopants and Its Application to GaN-Based Light-Emitting Diodes.

    Lee, Byeong Ryong; Kim, Tae Geun

    2016-06-01

    This paper reports the electrical and optical properties of the reduced graphene oxide (RGO)/single-walled carbon nanotube (SWNT) films using various p-type dopants and its application to GaN-based light-emitting diodes. To enhance the current injection and spreading of the RGO/SWNT films on the light-emitting diodes (LEDs), we increased the work function (φ) of the films using chemical doping with AuCl3, poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) ( PSS) and MoO3; thereby reduced the Schottky barrier height between the RGO/SWNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWNT film doped with MoO3 exhibited the decrease of the forward voltage from 5.3 V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.

  3. Magnetic Field Enhanced Superconductivity in Epitaxial Thin Film WTe2.

    Asaba, Tomoya; Wang, Yongjie; Li, Gang; Xiang, Ziji; Tinsman, Colin; Chen, Lu; Zhou, Shangnan; Zhao, Songrui; Laleyan, David; Li, Yi; Mi, Zetian; Li, Lu

    2018-04-25

    In conventional superconductors an external magnetic field generally suppresses superconductivity. This results from a simple thermodynamic competition of the superconducting and magnetic free energies. In this study, we report the unconventional features in the superconducting epitaxial thin film tungsten telluride (WTe 2 ). Measuring the electrical transport properties of Molecular Beam Epitaxy (MBE) grown WTe 2 thin films with a high precision rotation stage, we map the upper critical field H c2 at different temperatures T. We observe the superconducting transition temperature T c is enhanced by in-plane magnetic fields. The upper critical field H c2 is observed to establish an unconventional non-monotonic dependence on temperature. We suggest that this unconventional feature is due to the lifting of inversion symmetry, which leads to the enhancement of H c2 in Ising superconductors.

  4. Hybrid active layers from a conjugated polymer and inorganic nanoparticles for organic light emitting devices with emission colour tuned by electric field

    Aleshin, Andrey N; Alexandrova, Elena L; Shcherbakov, Igor P [Ioffe Physical-Technical Institute of the Russian Academy of Sciences, 26, Polytechnicheskaya Str., St Petersburg 194021 (Russian Federation)], E-mail: aleshin@transport.ioffe.ru

    2009-05-21

    We report on the investigation of the electrical and optical properties of hybrid active layers for organic devices consisting of a conjugated polymer MEH-PPV mixed with ZnO and Si nanoparticles. The effect of an electric field on the photoluminescence (PL) from a MEH-PPV : ZnO composite film is studied. We have found that in the absence of an electric field PL emission from the MEH-PPV : ZnO composites have two main maxima in the blue-red regions. Three additional minor PL maxima attributed to the exciplex states were found at {approx}420-480 nm. Application of a voltage bias to planar electrodes significantly suppresses the blue emission. Generation of excited states in the MEH-PPV : ZnO structures implies the presence of several radiative recombination mechanisms with the formation of polymer-nanoparticle complexes including exciplex states and charge transfer between the polymer and nanoparticles that can be controlled by an electric field. This effect provides the possibility to tune by an electric field the emission colour of organic light emitting diodes by combining an efficient emission from both organic/inorganic materials involved.

  5. Hybrid active layers from a conjugated polymer and inorganic nanoparticles for organic light emitting devices with emission colour tuned by electric field

    Aleshin, Andrey N; Alexandrova, Elena L; Shcherbakov, Igor P

    2009-01-01

    We report on the investigation of the electrical and optical properties of hybrid active layers for organic devices consisting of a conjugated polymer MEH-PPV mixed with ZnO and Si nanoparticles. The effect of an electric field on the photoluminescence (PL) from a MEH-PPV : ZnO composite film is studied. We have found that in the absence of an electric field PL emission from the MEH-PPV : ZnO composites have two main maxima in the blue-red regions. Three additional minor PL maxima attributed to the exciplex states were found at ∼420-480 nm. Application of a voltage bias to planar electrodes significantly suppresses the blue emission. Generation of excited states in the MEH-PPV : ZnO structures implies the presence of several radiative recombination mechanisms with the formation of polymer-nanoparticle complexes including exciplex states and charge transfer between the polymer and nanoparticles that can be controlled by an electric field. This effect provides the possibility to tune by an electric field the emission colour of organic light emitting diodes by combining an efficient emission from both organic/inorganic materials involved.

  6. Ferrofluid thin films as optical gaussmeters proposed for field and ...

    Department of Physics, Cochin University of Science and Technology, Cochin 682 022, India ... Magnetic field induced laser transmission through these ... An optical gaussmeter can be formulated with these ferrofluid thin films with the help of an LDR, and a laser (a diode laser or a cheaper torch laser which gives a stream ...

  7. Knife-edge thin film field emission cathodes

    Lee, B.; Demroff, H.P.; Drew, M.M.; Elliott, T.S.; Mazumdar, T.K.; McIntyre, P.M.; Pang, Y.; Smith, D.D.; Trost, H.J.

    1993-01-01

    Cathodes made of thin-film field emission arrays (FEA) have the advantages of high current density, pulsed emission, and low bias voltage operation. The authors have developed a technology to fabricate knife-edge field emission cathodes on (110) silicon wafers. The emitter geometry is optimized for efficient modulation at high frequency. Cathode fabrication progress and preliminary analysis of their applications in RF power sources are presented

  8. Direct observation and mechanism for enhanced field emission sites in platinum ion implanted/post-annealed ultrananocrystalline diamond films

    Panda, Kalpataru, E-mail: panda@afm.eei.eng.osaka-u.ac.jp, E-mail: phy.kalpa@gmail.com; Inami, Eiichi; Sugimoto, Yoshiaki [Graduate School of Engineering, Osaka University, 2-1, Yamada-Oka, Suita, Osaka 565-0871 (Japan); Sankaran, Kamatchi J.; Tai, Nyan Hwa [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lin, I-Nan, E-mail: inanlin@mail.tku.edu.tw [Department of Physics, Tamkang University, Tamsui 251, Taiwan (China)

    2014-10-20

    Enhanced electron field emission (EFE) properties for ultrananocrystalline diamond (UNCD) films upon platinum (Pt) ion implantation and subsequent post-annealing processes is reported, viz., low turn-on field of 4.17 V/μm with high EFE current density of 5.08 mA/cm{sup 2} at an applied field of 7.0 V/μm. Current imaging tunneling spectroscopy (CITS) mode in scanning tunneling spectroscopy directly revealed the increased electron emission sites density for Pt ion implanted/post-annealed UNCD films than the pristine one. The high resolution CITS mapping and local current–voltage characteristic curves demonstrated that the electrons are dominantly emitted from the diamond grain boundaries and Pt nanoparticles.

  9. Direct observation and mechanism for enhanced field emission sites in platinum ion implanted/post-annealed ultrananocrystalline diamond films

    Panda, Kalpataru; Inami, Eiichi; Sugimoto, Yoshiaki; Sankaran, Kamatchi J.; Tai, Nyan Hwa; Lin, I-Nan

    2014-01-01

    Enhanced electron field emission (EFE) properties for ultrananocrystalline diamond (UNCD) films upon platinum (Pt) ion implantation and subsequent post-annealing processes is reported, viz., low turn-on field of 4.17 V/μm with high EFE current density of 5.08 mA/cm 2 at an applied field of 7.0 V/μm. Current imaging tunneling spectroscopy (CITS) mode in scanning tunneling spectroscopy directly revealed the increased electron emission sites density for Pt ion implanted/post-annealed UNCD films than the pristine one. The high resolution CITS mapping and local current–voltage characteristic curves demonstrated that the electrons are dominantly emitted from the diamond grain boundaries and Pt nanoparticles.

  10. Measurement of full-field deformation induced by a dc electrical field in organic insulator films

    Boudou L.

    2010-06-01

    Full Text Available Digital image correlation method (DIC using the correlation coefficient curve-fitting for full-field surface deformation measurements of organic insulator films is investigated in this work. First the validation of the technique was undertaken. The computer-generated speckle images and the measurement of coefficient of thermal expansion (CTE of aluminium are used to evaluate the measurement accuracy of the technique. In a second part the technique is applied to measure the mechanical deformation induced by electrical field application to organic insulators. For that Poly(ethylene naphthalene 2,6-dicarboxylate (PEN thin films were subjected to DC voltage stress and DIC provides the full-field induced deformations of the test films. The obtained results show that the DIC is a practical and robust tool for better comprehension of mechanical behaviour of the organic insulator films under electrical stress.

  11. Bright-Emitting Perovskite Films by Large-Scale Synthesis and Photoinduced Solid-State Transformation of CsPbBr3 Nanoplatelets.

    Shamsi, Javad; Rastogi, Prachi; Caligiuri, Vincenzo; Abdelhady, Ahmed L; Spirito, Davide; Manna, Liberato; Krahne, Roman

    2017-10-24

    Lead halide perovskite nanocrystals are an emerging class of materials that have gained wide interest due to their facile color tuning and high photoluminescence quantum yield. However, the lack of techniques to translate the high performance of nanocrystals into solid films restricts the successful exploitation of such materials in optoelectronics applications. Here, we report a heat-up and large-scale synthesis of quantum-confined, blue-emitting CsPbBr 3 nanoplatelets (NPLs) that self-assemble into stacked lamellar structures. Spin-coated films fabricated from these NPLs show a stable blue emission with a photoluminescence quantum yield (PLQY) of 25%. The morphology and the optoelectronic properties of such films can be dramatically modified by UV-light irradiation under ambient conditions at a high power, which transforms the self-assembled stacks of NPLs into much larger structures, such as square-shaped disks and nanobelts. The emission from the transformed thin films falls within the green spectral region with a record PLQY of 65%, and they manifest an amplified spontaneous emission with a sharp line width of 4 nm at full-width at half-maximum under femtosecond-pulsed excitation. The transformed films show stable photocurrents with a responsivity of up to 15 mA/W and response times of tens of milliseconds and are robust under treatment with different solvents. We exploit their insolubility in ethanol to fabricate green-emitting, all-solution-processed light-emitting diodes with an external quantum efficiency of 1.1% and a luminance of 590 Cd/m 2 .

  12. Effect of nitrogen doping on the structural, optical and electrical properties of indium tin oxide films prepared by magnetron sputtering for gallium nitride light emitting diodes

    Tian, Lifei; Cheng, Guoan; Wang, Hougong; Wu, Yulong; Zheng, Ruiting; Ding, Peijun

    2017-01-01

    The indium tin oxide (ITO) films are prepared by the direct current magnetron sputtering technology with an ITO target in a mixture of argon and nitrogen gas at room temperature. The blue transmittance at 455 nm rises from 63% to 83% after nitrogen doping. The resistivity of the ITO film reduces from 4.6 × 10-3 (undoped film) to 5.7 × 10-4 Ω cm (N-doped film). The X-ray photoelectron spectroscopy data imply that the binding energy of the In3d5/2 peak is declined 0.05 eV after nitrogen doping. The high resolution transmission electron microscope images show that the nitrogen loss density of the GaN/ITO interface with N-doped ITO film is smaller than that of the GaN/ITO interface with undoped ITO film. The forward turn-on voltage of gallium nitride light emitting diode reduces by 0.5 V after nitrogen doping. The fabrication of the N-doped ITO film is conducive to modify the N component of the interface between GaN and ITO layer.

  13. Characterization of beta radiation fields using radiochromic films

    Benavente, Jhonny A.; Silva, Teogenes A. da

    2011-01-01

    The objective of this work was to study the response of radiochromic films for beta radiation fields in terms of absorbed dose. The reliability of the EBT model Gafchromic radiochromic film was studied. A 9800 XL model Microtek, transmission scanner, a 369 model X-Rite optical densitometer and a Mini 1240 Shimadzu UV spectrophotometer were used for measurement comparisons. Calibration of the three systems was done with irradiated samples of radiochromic films with 0.1; 0.3; 0.5; 0.8; 1.0; 1.5; 2.0; 2.5; 3.0; 3.5; 4.5 e 5.0 Gy in beta radiation field from a Sr-90/Y-90 source. Calibration was performed by establishing a correlation between the absorbed dose values and the corresponding radiochromic responses. Results showed significant differences in the absorbed dose values obtained with the three methods. Absorbed dose values showed errors from 0.6 to 4.4%, 0.3 to 31.8% and 0.2 to 47.3% for the Microtek scanner, the X-Rite Densitometer and the Shimadzu spectrophotometer, respectively. Due to the easy acquisition and use for absorbed dose measurements, the densitometer and the spectrophotometer showed to be suitable techniques to evaluate radiation dose in relatively homogeneous fields. In the case of inhomogeneous fields or for a two dimension mapping of radiation fields to identify anisotropies, the scanner technique is the most recommended. (author)

  14. Upper critical magnetic field of superconducting films with magnetic impurities

    Lemberger, T.R.

    1978-01-01

    The upper critical magnetic field, H/sub c2/(T), of In-Mn and Pb-Mn alloy films was measured. H/sub c2/ was determined from the resistance of the films. The results were compared with the theory of Fulde and Maki. This theory assumes that the electron-phonon coupling is weak, and that the interaction between the impurity spins and the conduction electron spins is weak. The theory predicts that the pair-breaking effect of the magnetic impurities is temperature-independent, and that the pair-breaking effects of the magnetic impurities and the applied magnetic field are additive. Furthermore, it predicts explicitly the temperature dependence of H/sub c2/. The temperature dependence of H/sub c2/ for the In-Mn alloy films is well described by the Fulde-Maki theory, despite the moderately strong electron-phonon coupling and the strong interaction between the impurity spins and the conduction electron spins. The temperature dependence of H/sub c2/ for the Pb-Mn alloy films is not well described by the Fulde-Maki theory, probably due to the strong electron-phonon coupling in Pb. However, even without a quantitatively correct theory, one can conclude from the Pb-Mn data that the pair-breaking effect of the magnetic impurities is temperature independent, and that the pair-breaking effects of the magnetic impurities and the applied magnetic field are additive. For some of the Pb-Mn alloy films, there was a region of positive curvature in H/sub c2/(T) near the zero-field transition temperature. This positive curvature is not understood

  15. Film growth kinetics and electric field patterning during electrospray deposition of block copolymer thin films

    Toth, Kristof; Hu, Hanqiong; Choo, Youngwoo; Loewenberg, Michael; Osuji, Chinedum

    The delivery of sub-micron droplets of dilute polymer solutions to a heated substrate by electrospray deposition (ESD) enables precisely controlled and continuous growth of block copolymer (BCP) thin films. Here we explore patterned deposition of BCP films by spatially varying the electric field at the substrate using an underlying charged grid, as well as film growth kinetics. Numerical analysis was performed to examine pattern fidelity by considering the trajectories of charged droplets during flight through imposed periodic field variations in the vicinity of the substrate. Our work uncovered an unexpected modality for improving the resolution of the patterning process via stronger field focusing through the use of a second oppositely charged grid beneath a primary focusing array, with an increase in highly localized droplet deposition on the intersecting nodes of the grid. Substrate coverage kinetics are considered for homopolymer deposition in the context of simple kinetic models incorporating temperature and molecular weight dependence of diffusivity. By contrast, film coverage kinetics for block copolymer depositions are additionally convoluted with preferential wetting and thickness-periodicity commensurability effects. NSF GRFP.

  16. Optical efficiency enhancement in white organic light-emitting diode display with high color gamut using patterned quantum dot film and long pass filter

    Kim, Hyo-Jun; Shin, Min-Ho; Kim, Young-Joo

    2016-08-01

    A new structure for white organic light-emitting diode (OLED) displays with a patterned quantum dot (QD) film and a long pass filter (LPF) was proposed and evaluated to realize both a high color gamut and high optical efficiency. Since optical efficiency is a critical parameter in white OLED displays with a high color gamut, a red or green QD film as a color-converting component and an LPF as a light-recycling component are introduced to be adjusted via the characteristics of a color filter (CF). Compared with a conventional white OLED without both a QD film and the LPF, it was confirmed experimentally that the optical powers of red and green light in a new white OLED display were increased by 54.1 and 24.7% using a 30 wt % red QD film and a 20 wt % green QD film with the LPF, respectively. In addition, the white OLED with both a QD film and the LPF resulted in an increase in the color gamut from 98 to 107% (NTSC x,y ratio) due to the narrow emission linewidth of the QDs.

  17. Fermion analogy for layered superconducting films in parallel magnetic field

    Rodriguez, J.P.

    1997-01-01

    The equivalence between the Lawrence-Doniach model for films of extreme type-II layered superconductors and a generalization of the back-scattering model for spin-(1/2) electrons in one dimension is demonstrated. This fermion analogy is then exploited to obtain an anomalous H parallel -1 tail for the parallel equilibrium magnetization of the minimal double-layer case in the limit of high parallel magnetic fields H parallel for temperatures in the critical regime. (orig.)

  18. Influence of the nuclear electric field on processes of annihilation of positrons emitted at β+-decay

    S. N. Fedotkin

    2014-12-01

    Full Text Available The process of atomic shell ionization during annihilation of positron, emitted at β+-decay, with K-electron of daughter's atom is considered. The role of nuclear Coulomb field at calculation of the probability of this process is investigated. It is shown that the correct account of the influence of this factor on the states of electron and posi-tron changes the probability of atomic ionization appreciably. The ratio of the probabilities of processes of atom-ic ionization and usual β+- decay is notably changed.

  19. Magnetization reversal in ferromagnetic film through solitons by electromagnetic field

    Veerakumar, V.; Daniel, M.

    2001-07-01

    We study the reversal of magnetization in an isotopic ferromagnetic film free from charges by exposing it to a circularly polarized electromagnetic (EM) field. The magnetization excitations are obtained in the form of line and lump solitons of the completely integrable modified KP-II equation which is derived using a reductive perturbation method from the set of coupled Landau-Lifschitz and Maxwell equations. It is observed that when the polarization of the EM-field is reversed followed by a rotation, for every (π)/2-degrees, the magnetization is reversed. (author)

  20. Polarized emission from light-emitting electrochemical cells using uniaxially oriented polymer thin films of poly(9,9-dioctylfluorene-co-bithiophene)

    Miyazaki, Masumi; Sakanoue, Tomo; Takenobu, Taishi

    2018-03-01

    Uniaxially oriented poly(9,9-dioctylfluorene-co-bithiophene) (F8T2) films were prepared on rubbed polyimide substrates and applied to emitting layers of light-emitting electrochemical cells (LECs). The layered structure of the uniaxially oriented F8T2 film and ionic liquid electrolytes enabled us to demonstrate LEC operations with high anisotropic characteristics both in emission and charge transport. Polarized electroluminescence (EL) from electrochemically induced p-n junctions in the uniaxially oriented F8T2 was obtained. The dichroic ratios of EL were the same as those of photoluminescence, suggesting that the doping process into the oriented F8T2 did not interrupt the polymer ordering. This indicates the usefulness of the layered structure of the polymer/electrolyte for the fabrication of LECs based on highly oriented polymer films. In addition, uniaxially oriented F8T2 was found to show reduced threshold energy in optically pumped amplified spontaneous emission. These demonstrations suggest the advantage of uniaxially oriented polymer-based LECs for potential application in future electrically pumped lasers.

  1. Solution-Grown ZnO Films toward Transparent and Smart Dual-Color Light-Emitting Diode.

    Huang, Xiaohu; Zhang, Li; Wang, Shijie; Chi, Dongzhi; Chua, Soo Jin

    2016-06-22

    An individual light-emitting diode (LED) capable of emitting different colors of light under different bias conditions not only allows for compact device integration but also extends the functionality of the LED beyond traditional illumination and display. Herein, we report a color-switchable LED based on solution-grown n-type ZnO on p-GaN/n-GaN heterojunction. The LED emits red light with a peak centered at ∼692 nm and a full width at half-maximum of ∼90 nm under forward bias, while it emits green light under reverse bias. These two lighting colors can be switched repeatedly by reversing the bias polarity. The bias-polarity-switched dual-color LED enables independent control over the lighting color and brightness of each emission with two-terminal operation. The results offer a promising strategy toward transparent, miniaturized, and smart LEDs, which hold great potential in optoelectronics and optical communication.

  2. APPLICATION OF LIGHT EMITTING DIODE IRRADIATION IN SURGERY AND OTHER FIELDS OF MEDICINE

    Iskander Mukhamedovich Baybekov

    2017-05-01

    Full Text Available Goal. To study the experience of using Light Emitting Diode (LED in surgery and other areas of medicine. Methods and methodology. The methodological basis is the analysis of literature, synthesis of the results of experimental and clinical studies, as well as a modern interpretation of the mechanisms of action of low-intensity laser radiation and LED effects on the body. Special attention is paid to the experience of clinical and morphological studies LED of impacts at the Republican specialized center of surgery named academician V. Vahidov of the Ministry of health of the Republic of Uzbekistan. Results. Comparative features of LED and lasers, such as stimulation of reparative processes, their influence on healing of skin wounds and sternum after sternotomy, red blood cells and microcirculation are discussed. Conclusion. It has been suggested that LED is a worthy alternative to lasers. Their use is advisable in complex treatment of surgical diseases.

  3. Contribution of photosynthesized carbon to the methane emitted from paddy fields

    Minoda, T.; Kimura, M.

    1994-09-01

    Emission rates of CH4 from paddy soil with and without rice straw applications were measured with pot experiments to estimate the contribution of rice straw to total CH4 emissions during the growing season. The CH4 derived from rice straw was calculated to be 50.4% of the total emission. 13CO2 uptake experiments were carried out three times from Aug. 8 to Sept. 18 to estimate the contribution of photosynthesized carbon to CH4 emission. The contribution percentages of photosynthesized carbon to the total CH4 emitted to the atmosphere were 72-110% around Aug. 8, 29-36% around Aug. 30, and 13-17% around Sept. 18, 1993.

  4. Photoluminescence and cathodoluminescence properties of green emitting SrGa2{S}4 : Eu2+ thin film

    Chartier, Céline; Benalloul, Paul; Barthou, Charles; Frigerio, Jean-Marc; Mueller, Gerd O.; Mueller-Mach, Regina; Trottier, Troy

    2002-02-01

    Photoluminescence and cathodoluminescence properties of SrGa2S4 : Eu2+ thin films prepared by reactive RF magnetron sputtering are investigated. Luminescence performances of the phosphor in the thin film form are compared to those of powder samples: the brightness efficiency of thin films is found to be about 30% of the efficiency of powder at low current density. A ratio higher than 40% is expected at higher current density. Thin film screens for FEDs will become a positive alternative to powder screens provided that film quality and light extraction could be improved by optimization of thickness and deposition parameters.

  5. High magnetic field properties of Fe-pnictide thin films

    Kurth, Fritz

    2015-11-20

    The recent discovery of high-temperature superconductivity in Fe-based materials triggered worldwide efforts to investigate their fundamental properties. Despite a lot of similarities to cuprates and MgB{sub 2}, important differences like near isotropic behaviour in contrast to cuprates and the peculiar pairing symmetry of the order parameter (OP) have been reported. The OP symmetry of Fe-based superconductors (FBS) was theoretically predicted to be of so-called s± state prior to various experimental works. Still, most of the experimental results favour the s± scenario; however, definitive evidence has not yet been reported. Although no clear understanding of the superconducting mechanisms yet exists, potential applications such as high-field magnets and Josephson devices have been explored. Indeed, a lot of reports about FBS tapes, wires, and even SQUIDs have been published to this date. In this thesis, the feasibility of high-field magnet applications of FBS is addressed by studying their transport properties, involving doped BaFe{sub 2}As{sub 2} (Ba-122) and LnFeAs(O,F) [Ln=Sm and Nd]. Particularly, it is important to study physical properties in a sample form (i.e. thin films) that is close to the conditions found in applications. However, the realisation of epitaxial FBS thin films is not an easy undertaking. Recent success in growing epitaxial FBS thin films opens a new avenue to delve into transport critical current measurements. The information obtained through this research will be useful for exploring high-field magnet applications. This thesis consists of 7 chapters: Chapter 1 describes the motivation of this study, the basic background of superconductivity, and a brief summary of the thin film growth of FBS. Chapter 2 describes experimental methods employed in this study. Chapter 3 reports on the fabrication of Co-doped Ba-122 thin films on various substrates. Particular emphasis lies on the discovery of fluoride substrates to be beneficial for

  6. Quantum-dot light-emitting diodes utilizing CdSe /ZnS nanocrystals embedded in TiO2 thin film

    Kang, Seung-Hee; Kumar, Ch. Kiran; Lee, Zonghoon; Kim, Kyung-Hyun; Huh, Chul; Kim, Eui-Tae

    2008-11-01

    Quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated on Si wafers by embedding core-shell CdSe /ZnS nanocrystals in TiO2 thin films via plasma-enhanced metallorganic chemical vapor deposition. The n-TiO2/QDs /p-Si LED devices show typical p-n diode current-voltage and efficient electroluminescence characteristics, which are critically affected by the removal of QD surface ligands. The TiO2/QDs /Si system we presented can offer promising Si-based optoelectronic and electronic device applications utilizing numerous nanocrystals synthesized by colloidal solution chemistry.

  7. Tetracene-based organic light-emitting transistors: optoelectronic properties and electron injection mechanism

    Santato, C.; Capelli, R.; Loi, M.A.; Murgia, M.; Cicoira, F.; Roy, Arunesh; Stallinga, P; Zamboni, R.; Rost, C.; Karg, S.F.; Muccini, M.

    2004-01-01

    Optoelectronic properties of light-emitting field-effect transistors (LETs) fabricated on bottom-contact transistor structures using a tetracene film as charge-transport and light-emitting material are investigated. Electroluminescence generation and transistor current are correlated, and the bias

  8. Assessment of electromagnetic fields intensity emitted by cellular phone base stations in surrounding flats - a preliminary study

    Zmyslony, M.; Politanski, P.; Mamrot, P.; Bortkiewicz, A.

    2006-01-01

    A rapid development of mobile telecommunications (MT) has resulted in an increased concern about possible detrimental health effects of electromagnetic fields (EMFs) emitted by MT systems, and by MT base stations in particular. Research into EMFs effects on the health of inhabitants living in their vicinity requires first of all a solid assessment of the exposure level. Up to now, the reports in this field have been rather scant. This article presents the results of preliminary measurements of EMFs fields in selected flats around selected base stations in the city of Lodz. Measurements of electric field strength, E, to assess EMF exposure were based on the standard procedures currently in force in Poland. As the study is regarded as a preliminary one, the measurements were conducted in buildings with the expected largest radiation. The measurements show that in the flats located up to 500 m from the base station, EMFs are within the limits specified by relevant Polish regulations on the general public and environmental protection. It was also observed that in a few (less than 10%) flats the field with E exceeded 0.8 V/m. The results show that there are no correlations between electric field strength and distance between the flat and the base station. Therefore, the distance from the base station cannot be used to represent the exposure rate; to determine the latter, EMF measurements are necessary. (author)

  9. Effect of magnetic field on the growth of Be films prepared by thermal evaporation

    Li, Kai; Luo, Bing-chi; Tan, Xiu-lan; Zhang, Ji-qiang; Wu, Wei-dong; Liu, Ying

    2014-01-01

    Highlights: • The Be films were prepared on Si (1 0 0) substrates with and without a magnetic field by thermal evaporation, respectively. • The grain diameter in the Be film transited from 300 nm to 18 nm by application of the magnetic field. • The surface roughness of the Be film decreased from 61 nm to 3 nm by application of the magnetic field. • The Be film grown with the magnetic field was easily oxidized due to its refined grains and the oxidation was gradually decreased with increasing the etching depth in the film. - Abstract: Grain refinement of beryllium deposits is studied as a significant subject for beryllium capsule in the Inertial Confinement Fusion project. The Be films were prepared on the Si (1 0 0) substrates by thermal evaporation with and without a magnetic field, respectively. The two separate groups of prepared Be films were characterized. The results showed the grain diameter in the Be film transited from 300 nm to 18 nm and the surface roughness of the Be film decreased from 61 nm to 3 nm by application of the magnetic field during the deposition process of Be coating. However, the Be film grown with the magnetic field was easily oxidized in comparison with that grown without magnetic field due to the refined grains, and the oxidation was gradually decreased with the increase of etching depth in the Be film. The reason for grain refinement of Be film was also qualitatively described

  10. Influence of the substrate platform on the opto-electronic properties of multi-layer organic light-emitting field-effect transistors

    Generali, Gianluca; Capelli, Raffaella; Toffanin, Stefano; Muccini, Michele [Consiglio Nazionale delle Ricerche (CNR), Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), via P. Gobetti 101, I-40129 Bologna (Italy); Dinelli, Franco, E-mail: g.generali@bo.ismn.cnr.it, E-mail: m.muccini@bo.ismn.cnr.it [Consiglio Nazionale delle Ricerche (CNR), INO U.O.S. ' A. Gozzini' Area della Ricerca di Pisa - S. Cataldo, via Moruzzi 1, I-56124 Pisa (Italy)

    2011-06-08

    In this paper, we present a study of the effects of the influence of the substrate platform on the properties of a three-layer vertical hetero-junction made of thin films of {alpha}, {omega}-diperfluorohexyl-4T (DHF4T), a blend of tris(8-hydroxyquinoline)aluminium (Alq3) and 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran (DCM) and {alpha}, {omega}-dihexyl-quaterthiophene (DH4T). The hetero-junction represents the active component of an organic light-emitting transistor (OLET). The substrate platforms investigated in this study are glass/indium-tin-oxide/poly(methyl-methacrylate) (PMMA) and Si{sup ++}/silicon oxide (SiO{sub 2})/PMMA. The first platform is almost completely transparent to light and therefore is very promising for use in OLET applications. The second one has been chosen for comparison as it employs standard microelectronic materials, i.e. Si{sup ++}/SiO{sub 2}. We show how different gate materials and structure can affect the relevant field-effect electrical characteristics, such as the charge mobility and threshold voltage. By means of an atomic force microscopy analysis, a systematic study has been made in order to correlate the morphology of the active layers with the electrical properties of the devices.

  11. Linear accelerator accelerating module to suppress back-acceleration of field-emitted particles

    Benson, Stephen V.; Marhauser, Frank; Douglas, David R.; Ament, Lucas J. P.

    2017-12-05

    A method for the suppression of upstream-directed field emission in RF accelerators. The method is not restricted to a certain number of cavity cells, but requires similar operating field levels in all cavities to efficiently annihilate the once accumulated energy. Such a field balance is desirable to minimize dynamic RF losses, but not necessarily achievable in reality depending on individual cavity performance, such as early Q.sub.0-drop or quench field. The method enables a significant energy reduction for upstream-directed electrons within a relatively short distance. As a result of the suppression of upstream-directed field emission, electrons will impact surfaces at rather low energies leading to reduction of dark current and less issues with heating and damage of accelerator components as well as radiation levels including neutron generation and thus radio-activation.

  12. Soap-film flow induced by electric fields in asymmetric frames

    Mollaei, S.; Nasiri, M.; Soltanmohammadi, N.; Shirsavar, R.; Ramos, A.; Amjadi, A.

    2018-04-01

    Net fluid flow of soap films induced by (ac or dc) electric fields in asymmetric frames is presented. Previous experiments of controllable soap film flow required the simultaneous use of an electrical current passing through the film and an external electric field or the use of nonuniform ac electric fields. Here a single voltage difference generates both the electrical current going through the film and the electric field that actuates on the charge induced on the film. The film is set into global motion due to the broken symmetry that appears by the use of asymmetric frames. If symmetric frames are used, the film flow is not steady but time dependent and irregular. Finally, we study numerically these film flows by employing the model of charge induction in ohmic liquids.

  13. Effective field approach to the Ising film in a transverse field

    Peliti, L.; Saber, M.

    1998-05-01

    Within the framework of the effective field theory, we examine the phase transitions of the spin -1/2 Ising film in a transverse field. We study the critical temperature of the film as a function of the exchange interactions, the transverse field and the film thickness. We find that, if the ratio of the surface exchange interactions to the bulk ones R=J s /J is smaller that a critical value R c , the critical temperature T c /J of the film is smaller that the bulk critical temperature T B c /J and as R is increased further, T c /J approaches T B c /J. On the other hand, if R>R c ,T c /J is larger than the bulk T B c /J and the surface T S c /J critical temperatures of the corresponding semi-infinite system and as R is increased further, T c /J approaches the surface critical temperature T S c /J. (author)

  14. The effects of ultra-thin cerium fluoride film as the anode buffer layer on the electrical characteristics of organic light emitting diodes

    Lu, Hsin-Wei; Tsai, Cheng-Che; Hong, Cheng-Shong; Kao, Po-Ching; Juang, Yung-Der; Chu, Sheng-Yuan

    2016-11-01

    In this study, the efficiency of organic light-emitting diodes (OLEDs) was enhanced by depositing a CeF3film as an ultra-thin buffer layer between the indium tin oxide (ITO) electrode and α-naphthylphenylbiphenyldiamine (NPB) hole transport layer, with the structure configuration ITO/CeF3 (0.5, 1, and 1.5 nm)/α-naphthylphenylbiphenyl diamine (NPB) (40 nm)/tris(8-hydroxyquinoline) aluminum (Alq3) (60 nm)/lithium fluoride (LiF) (1 nm)/Al (150 nm). The enhancement mechanism was systematically investigated via several approaches. The X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy results revealed the formation of the UV-ozone treated CeF3 film. The work function increased from 4.8 eV (standard ITO electrode) to 5.22 eV (0.5-nm-thick UV-ozone treated CeF3 film deposited on the ITO electrode). The surface roughness of the UV-ozone treated CeF3 film was smoother than that of the standard ITO electrode. Further, the UV-ozone treated CeF3 film increased both the surface energy and polarity, as determined from contact angle measurements. In addition, admittance spectroscopy measurements showed an increased capacitance and conductance of the OLEDs. Accordingly, the turn-on voltage decreased from 4.2 V to 3.6 V at 1 mA/cm2, the luminance increased from 7588 cd/m2 to 24760 cd/m2, and the current efficiency increased from 3.2 cd/A to 3.8 cd/A when the 0.5-nm-thick UV-ozone treated CeF3 film was inserted into the OLEDs.

  15. Electron field emission from screen-printed graphene/DWCNT composite films

    Xu, Jinzhuo; Pan, Rong; Chen, Yiwei; Piao, Xianqin; Qian, Min; Feng, Tao; Sun, Zhuo

    2013-01-01

    Highlights: ► The field emission performance improved significantly when adding graphene into DWCNTs as the emission material. ► We set up a model of pure DWCNT films and graphene/DWCNT composite films. ► We discussed the contact barrier between emission films and electric substrates by considering the Fermi energies of silver, DWCNT and graphene. - Abstract: The electron field emission properties of graphene/double-walled carbon nanotube (DWCNT) composite films prepared by screen printing have been systematically studied. Comparing with the pure DWCNT films and pure graphene films, a significant enhancement of electron emission performance of the composite films are observed, such as lower turn-on field, higher emission current density, higher field enhancement factor, and long-term stability. The optimized composite films with 20% weight ratio of graphene show the best electron emission performance with a low turn-on field of 0.62 V μm −1 (at 1 μA cm −2 ) and a high field enhancement factor β of 13,000. A model of the graphene/DWCNT composite films is proposed, which indicate that a certain amount of graphene will contribute the electron transmission in the silver substrate/composite films interface and in the interior of composite films, and finally improve the electron emission performance of the graphene/DWCNT composite films.

  16. Electric field tuning of phase separation in manganite thin films

    Lourembam, James; Wu, Jianchun; Ding, Junfeng; Lin, Weinan; Wu, Tao

    2014-01-01

    In this paper, we investigate the electric field effect on epitaxial Pr0.65(Ca0.75Sr0.25)0.35MnO3 thin films in electric double-layer transistors. Different from the conventional transistors with semiconducting channels, the sub(micrometer)-scale phase separation in the manganite channels is expected to result in inhomogeneous distribution of mobile carriers and local enhancement of electric field. The field effect is much larger in the low-temperature phase separation region compared to that in the high-temperature polaron transport region. Further enhancement of electroresistance is achieved by applying a magnetic field, and a 250% modulation of resistance is observed at 80 K, equivalent to an increase of the ferromagnetic metallic phase fraction by 0.51%, as estimated by the general effective medium model. Our results illustrate the complementary nature of electric and magnetic field effects in phase-separated manganites, providing insights on such novel electronic devices based on complex oxides.

  17. Electric field tuning of phase separation in manganite thin films

    Lourembam, James

    2014-01-29

    In this paper, we investigate the electric field effect on epitaxial Pr0.65(Ca0.75Sr0.25)0.35MnO3 thin films in electric double-layer transistors. Different from the conventional transistors with semiconducting channels, the sub(micrometer)-scale phase separation in the manganite channels is expected to result in inhomogeneous distribution of mobile carriers and local enhancement of electric field. The field effect is much larger in the low-temperature phase separation region compared to that in the high-temperature polaron transport region. Further enhancement of electroresistance is achieved by applying a magnetic field, and a 250% modulation of resistance is observed at 80 K, equivalent to an increase of the ferromagnetic metallic phase fraction by 0.51%, as estimated by the general effective medium model. Our results illustrate the complementary nature of electric and magnetic field effects in phase-separated manganites, providing insights on such novel electronic devices based on complex oxides.

  18. [Evaluation of hazards caused by magnetic field emitted from magnetotherapy applicator to the users of bone conduction hearing prostheses].

    Zradziński, Patryk; Karpowicz, Jolanta; Gryz, Krzysztof; Leszko, Wiesław

    2017-06-27

    Low frequency magnetic field, inducing electrical field (Ein) inside conductive structures may directly affect the human body, e.g., by electrostimulation in the nervous system. In addition, the spatial distribution and level of Ein are disturbed in tissues neighbouring the medical implant. Numerical models of magneto-therapeutic applicator (emitting sinusoidal magnetic field of frequency 100 Hz) and the user of hearing implant (based on bone conduction: Bonebridge type - IS-BB or BAHA (bone anchorde hearing aid) type - IS-BAHA) were worked out. Values of Ein were analyzed in the model of the implant user's head, e.g., physiotherapist, placed next to the applicator. It was demonstrated that the use of IS-BB or IS-BAHA makes electromagnetic hazards significantly higher (up to 4-fold) compared to the person without implant exposed to magnetic field heterogeneous in space. Hazards for IS-BAHA users are higher than those for IS-BB users. It was found that applying the principles of directive 2013/35/EU, at exposure to magnetic field below exposure limits the direct biophysical effects of exposure in hearing prosthesis users may exceed relevant limits. Whereas applying principles and limits set up by Polish labor law or the International Commission on Non-Ionizing Radiation Protection (ICNIRP) guidelines, the compliance with the exposure limits also ensures the compliance with relevant limits of electric field induced in the body of hearing implant user. It is necessary to assess individually electromagnetic hazard concerning hearing implant users bearing in mind significantly higher hazards to them compared to person without implant or differences between levels of hazards faced by users of implants of various structural or technological solutions. Med Pr 2017;68(4):469-477. This work is available in Open Access model and licensed under a CC BY-NC 3.0 PL license.

  19. Evaluation of hazards caused by magnetic field emitted from magnetotherapy applicator to the users of bone conduction hearing prostheses

    Patryk Zradziński

    2017-08-01

    Full Text Available Background: Low frequency magnetic field, inducing electrical field (Ein inside conductive structures may directly affect the human body, e.g., by electrostimulation in the nervous system. In addition, the spatial distribution and level of Ein are disturbed in tissues neighbouring the medical implant. Material and Methods: Numerical models of magneto-therapeutic applicator (emitting sinusoidal magnetic field of frequency 100 Hz and the user of hearing implant (based on bone conduction: Bonebridge type – IS-BB or BAHA (bone anchorde hearing aid type – IS-BAHA were worked out. Values of Ein were analyzed in the model of the implant user’s head, e.g., physiotherapist, placed next to the applicator. Results: It was demonstrated that the use of IS-BB or IS-BAHA makes electromagnetic hazards significantly higher (up to 4-fold compared to the person without implant exposed to magnetic field heterogeneous in space. Hazards for IS-BAHA users are higher than those for IS-BB users. It was found that applying the principles of directive 2013/35/EU, at exposure to magnetic field below exposure limits the direct biophysical effects of exposure in hearing prosthesis users may exceed relevant limits. Whereas applying principles and limits set up by Polish labor law or the International Commission on Non-Ionizing Radiation Protection (ICNIRP guidelines, the compliance with the exposure limits also ensures the compliance with relevant limits of electric field induced in the body of hearing implant user. Conclusions: It is necessary to assess individually electromagnetic hazard concerning hearing implant users bearing in mind significantly higher hazards to them compared to person without implant or differences between levels of hazards faced by users of implants of various structural or technological solutions. Med Pr 2017;68(4:469–477

  20. Pilot study of extremely low frequency magnetic fields emitted by transformers in dwellings. Social aspects.

    Zaryabova, Victoria; Shalamanova, Tsvetelina; Israel, Michel

    2013-06-01

    A large number of epidemiologic studies examining the potential effect of residential exposure to extremely-low frequency (ELF) magnetic fields and childhood leukemia have been published. Two pooled analyses [Ahlbom A, Day N, Feychting M, Roman E, Skinner J, Dockerty J, Linet M, et al. (2000). A pooled analysis of magnetic fields and childhood leukaemia. Br J Cancer. 83(5):692-698; Greenland S, Sheppard AR, Kaune WT, Poole C, Kelsh AM (2000). A pooled analysis of magnetic fields, wire codes, and childhood leukemia. Epidemiology. 11(6):624-634], which included the major epidemiologic studies on ELF magnetic fields and childhood leukemia showed twofold increase in childhood leukemia risk in association with residential ELF exposure above 0.3-0.4 μT. Based on "limited" epidemiologic evidence linking ELF exposure to childhood leukemia and "inadequate evidence" for carcinogenicity of ELF in rodent bioassays, the International Agency for Research on Cancer (IARC) classified ELF magnetic fields as a possible human carcinogen (2B classification) [International Agency for Research on Cancer (IARC) (2002). Non-ionizing radiation, Part 1: Static and extremely low-frequency (ELF) electric and magnetic fields. IARC monographs on the evaluation of carcinogenic risks to humans. Vol. 80. IARC Press: Lyon], confirmed by WHO on the basis of studies published after 2000 [World Health Organization. Extremely low frequency fields. In: 238 Environmental health criteria, Geneva: WHO; 2007]. The analysis of more recent studies of ELF magnetic fields and childhood leukemia had small findings and propose methodological improvements concerning the uncertainties in epidemiological approaches and exposure assessment, bias in selection of controls [Kheifets L, Oksuzyan S (2008). Exposure assessment and other challenges in non-ionizing radiation studies of childhood leukaemia. Radiat Prot Dosimetry. 132(2):139-147]. By the end of 2010, 37 countries had been identified for possible participation

  1. Analysis of the fields emitted by mobile communication systems in terms of electromagnetic security

    Kerimov, E.A.; Abdullayeva, T.M.; Bayramova, Sh.A.; Mardakhayev, A.V.; Khidirov, A.Sh.

    2009-01-01

    The main technical characteristics of digital communication systems of cellular bond are analyzed in this paper.The peculiarities of the electromagnetic fields near the antenna of digital communication systems of cellular bond with frequency, time and code interleaving of subscriber channels.It is shown that it is necessary to pay attention to relative broadbandness of digital signal spectrum on antenna radiation characteristics at carrying out of works on electromagnetic monitoring

  2. Effects of high frequency electromagnetic fields emitted from digital cellular telephones on electronic pocket dosimeters

    Deji, Shizuhiko; Nishizawa, Kunihide

    2003-01-01

    Electric field strength distribution around the digital cellular telephone (cell phone) transmitting 1.5GHz band was analyzed by using an isotropic probe. Five types of electronic pocket dosimeters (EPDs) were exposed to the fields for 50sec under four kinds of configurations relative to the cell phone. The field distribution expanded around the antenna and had a maximum strength level of 36.5±0.3V/m. The cell phone caused abnormally high values (wrong dosages) to four EPDs out of five due to electromagnetic interference. Three out of the four EPDs exceeded the upper limits of dose range depending on the configurations, and the maximum value of wrong dosage among the EPDs was 1,283 μSv. The minimum distance preventing electromagnetic interference (protection distance) differed with each EPD and ranged from 2.0cm to 21.0cm. The electromagnetic immunity levels of EPD-1, 2, 3, 4 and 5 were 13.3, ≥35, ≥32, 9.2 and ≥35 V/m, respectively. Although the immunity levels were either equal to or greater than the IEC-standard level, those of the EPDs should be enhanced greater than the IEC-standard from the standpoint of radiation protection. (author)

  3. Ultraviolet emitting (Y1-xGd x)2O3-δ thin films deposited by radio frequency magnetron sputtering; structure-property-thin film processing relationships

    Fowlkes, J.D.; Fitz-Gerald, J.M.; Rack, P.D.

    2007-01-01

    The effects that the oxygen partial pressure, substrate temperature and annealing temperature have on the cathodoluminescence (CL) efficiency of radio frequency magnetron sputter deposited Gd-doped Y 2 O 3 thin films is investigated. Furthermore these sputtering parameters are correlated to the degree of crystallinity, the phases present (cubic (α) versus monoclinic (β) Y 2 O 3 ), and the stoichiometry of the thin films. Films deposited at room temperature (RT) did not CL, however, the films were activated by a post-deposition anneal at 1273 K for 6 h. Films deposited at 873 K had a very low CL efficiency which was significantly enhanced by a post-deposition anneal. For RT deposited films the external CL efficiency increased with increasing oxygen partial pressure for the range studied, however the opposite trend was observed for the 873 K deposited films. Examination of the morphology and grain size of the high temperature deposited films revealed that the average grain size increased with decreasing partial pressure and the observed increase in the external CL efficiency was attributed to enhanced anomalous diffraction. An intrinsic CL efficiency term was determined to circumvent the effects of the enhanced anomalous diffraction, and the CL efficiency was correlated to the integrated intensity of the (222) of the cubic α-Y 2 O 3 phase

  4. Preliminary results on soil-emitted gamma radiation and its relation with the local atmospheric electric field at Amieira (Portugal)

    Lopes, F; Barbosa, S M; Silva, H G; Bárias, S

    2015-01-01

    The atmospheric electric field near the Earth's surface is dominated by atmospheric pollutants and natural radioactivity, with the latter directly linked to radon ( 222 Rn) gas. For a better comprehension on the temporal variability of both the atmospheric electric field and the radon concentration and its relation with local atmospheric variables, simultaneous measurements of soil-emitted gamma radiation and potential gradient (defined from the vertical component of the atmospheric electric field) were taken every minute, along with local meteorological parameters (e.g., temperature, atmospheric pressure, relative humidity and daily solar radiation). The study region is Amieira, part of the Alqueva lake in Alentejo Portugal, where an interdisciplinary meteorological campaign, ALEX2014, took place from June to August 2014. Soil gamma radiation is more sensitive to small concentrations of radon as compared with alpha particles measurements, for that reason it is more suited for sites with low radon levels, as expected in this case. Preliminary results are presented here: statistical and spectral analysis show that i) the potential gradient has a stronger daily cycle as compared with the gamma radiation, ii) most of the energy of the gamma signal is concentrated in the low frequencies (close to 0), contrary to the potential gradient that has most of the energy in frequency 1 (daily cycle) and iii) a short-term relation between gamma radiation and the potential gradient has not been found. Future work and plans are also discussed. (paper)

  5. Near-Infrared to Visible Organic Upconversion Devices Based on Organic Light-Emitting Field Effect Transistors.

    Li, Dongwei; Hu, Yongsheng; Zhang, Nan; Lv, Ying; Lin, Jie; Guo, Xiaoyang; Fan, Yi; Luo, Jinsong; Liu, Xingyuan

    2017-10-18

    The near-infrared (NIR) to visible upconversion devices have attracted great attention because of their potential applications in the fields of night vision, medical imaging, and military security. Herein, a novel all-organic upconversion device architecture has been first proposed and developed by incorporating a NIR absorption layer between the carrier transport layer and the emission layer in heterostructured organic light-emitting field effect transistors (OLEFETs). The as-prepared devices show a typical photon-to-photon upconversion efficiency as high as 7% (maximum of 28.7% under low incident NIR power intensity) and millisecond-scale response time, which are the highest upconversion efficiency and one of the fastest response time among organic upconversion devices as referred to the previous reports up to now. The high upconversion performance mainly originates from the gain mechanism of field-effect transistor structures and the unique advantage of OLEFETs to balance between the photodetection and light emission. Meanwhile, the strategy of OLEFETs also offers the advantage of high integration so that no extra OLED is needed in the organic upconversion devices. The results would pave way for low-cost, flexible and portable organic upconversion devices with high efficiency and simplified processing.

  6. Field-emitting Townsend regime of surface dielectric barrier discharges emerging at high pressure up to supercritical conditions

    Pai, David Z; Stauss, Sven; Terashima, Kazuo

    2015-01-01

    Surface dielectric barrier discharges (DBDs) in CO 2 from atmospheric pressure up to supercritical conditions generated using 10 kHz ac excitation are investigated experimentally. Using current–voltage and charge–voltage measurements, imaging, optical emission spectroscopy, and spontaneous Raman spectroscopy, we identify and characterize a field-emitting Townsend discharge regime that emerges above 0.7 MPa. An electrical model enables the calculation of the discharge-induced capacitances of the plasma and the dielectric, as well as the space-averaged values of the surface potential and the potential drop across the discharge. The space-averaged Laplacian field is accounted for in the circuit model by including the capacitance due to the fringe electric field from the electrode edge. The electrical characteristics are demonstrated to fit the description of atmospheric-pressure Townsend DBDs (Naudé et al 2005 J. Phys. D: Appl. Phys. 38 530–8), i.e. self-sustained DBDs with minimal space-charge effects. The purely continuum emission spectrum is due to electron–neutral bremsstrahlung corresponding to an average electron temperature of 2600 K. Raman spectra of CO 2 near the critical point demonstrate that the average gas temperature increases by less than 1 K. (paper)

  7. A review on organic spintronic materials and devices: I. Magnetic field effect on organic light emitting diodes

    Rugang Geng

    2016-06-01

    Full Text Available Organic spintronics is an emerging and potential platform for future electronics and display due to the intriguing properties of organic semiconductors (OSCs. For the past decade, studies have focused on three types of organic spintronic phenomena: (i magnetic field effect (MFE in organic light emitting diodes (OLEDs, where spin mixing between singlet and triplet polaron pairs (PP can be influenced by an external magnetic field leading to organic magnetoresistive effect (OMAR; (ii magnetoresistance (MR in organic spin valves (OSVs, where spin injection, transport, manipulation, and detection have been demonstrated; and (iii magnetoelectroluminescence (MEL bipolar OSVs or spin-OLEDs, where spin polarized electrons and holes are simultaneously injected into the OSC layer, leading to the dependence of electroluminescence intensity on relative magnetization of the electrodes. In this first of two review papers, we present major experimental results on OMAR studies and current understanding of OMAR using several spin dependent processes in organic semiconductors. During the discussion, we highlight some of the outstanding challenges in this promising research field. Finally, we provide an outlook on the future of organic spintronics.

  8. The optimum circular field size for dental radiography with intraoral films

    Straaten, F.J. van; Aken, J. van

    Intraoral radiographs are often made with circular fields to irradiate the film, and in many instances these fields are much larger than the film. The feasibility of reducing a circular radiation field without increasing the probability of excessive cone cutting was evaluated clinically, and an

  9. Pulsed Nd:YAG laser deposition of indium tin oxide thin films in different gases and organic light emitting device applications

    Yong, T.Y.; Tou, T.Y.; Yow, H.K.; Safran, G.

    2008-01-01

    The microstructures, electrical and optical properties of indium-doped tin oxide (ITO) films, deposited on glass substrates in different background gases by a pulsed Nd:YAG laser, were characterized. The optimal pressure for obtaining the lowest resistivity in ITO thin film is inversely proportional to the molecular weight of the background gases, namely the argon (Ar), oxygen (O 2 ), nitrogen (N 2 ) and helium (He). While substrate heating to 250 deg. C decreased the ITO resistivity to -4 Ω cm, obtaining the optical transmittance of higher than 90% depended mainly on the background gas pressure for O 2 and Ar. Obtaining the lowest ITO resistivity, however, did not beget a high optical transmittance for ITO deposition in N 2 and He. Scanning electron microscope pictures show distinct differences in microstructures due to the background gas: nanostructures when using Ar and N 2 but polycrystalline for using O 2 and He. The ITO surface roughness varied with the deposition distance. The effects on the molecularly doped, single-layer organic light emitting device (OLED) operation and performance were also investigated. Only ITO thin films prepared in O 2 and Ar are suitable for the fabrication OLED with performance comparable to that fabricated on the commercially available, magnetron-sputtered ITO

  10. Modification of C60/C70+Pd film structure under electric field influence during electron emission

    Czerwosz, E.; Dluzewski, P.; Kozlowski, M.

    2001-01-01

    We investigated the modification of structure of C 60 /C 70 +Pd films during cold electron emission from these films. Films were obtained by vacuum thermal deposition from two sources and were characterised before and after electron emission measurements by transmission electron microscopy and electron diffraction. Films were composed of nanocrystalline Pd objects dispersed in carbon/fullerenes matrix. I-V characteristics for electron emission were obtained in diode geometry with additionally applied voltage along the film surface. The modification of film structure occurred under applied electric field and the grouping of Pd nano crystals into bigger objects was observed

  11. Laser annealed HWCVD and PECVD thin silicon films. Electron field emission

    O'Neill, K.A.; Shaikh, M.Z.; Lyttle, G.; Anthony, S.; Fan, Y.C.; Persheyev, S.K.; Rose, M.J.

    2006-01-01

    Electron Field Emission (FE) properties of various laser annealed thin silicon films on different substrates were investigated. HWCVD microcrystalline and PECVD amorphous silicon films were irradiated with Nd : YAG and XeCl Excimer lasers at varying energy densities. Encouraging FE results were mainly from XeCl Excimer laser processed PECVD and HWCVD films on metal backplanes. FE measurements were complemented by the study of film surface morphology. Geometric field enhancement factors from surface measurements and Fowler-Nordheim Theory (FNT) were compared. FE properties of the films were also found to be particularly influenced by the backplane material

  12. Effects of surface and bulk transverse fields on critical behaviour of ferromagnetic films

    Saber, A.; Lo Russo, S.; Mattei, G.

    2002-02-01

    The influence of surface and bulk transverse fields on the critical behaviour of a ferromagnetic Ising film is studied using the effective field theory based on a single-site cluster method. Surface exchange enhancement is considered and a critical value is obtained. The dependence of the critical uniform transverse field on film thickness, phase diagrams in the fields, critical surface transverse field versus the bulk one, and exchange coupling ratio are presented. (author)

  13. Ferromagnetic transitions of a spin-one Ising film in a surface and bulk transverse fields

    Saber, A.; Lo Russo, S.; Mattei, G.; Mattoni, A.

    2002-01-01

    Using the effective field theory method, we have calculated the Curie temperature of a spin-one Ising ferromagnetic film in a surface and bulk transverse fields. Numerical calculations give phase diagrams under various parameters. Surface exchange enhancement is considered. The dependence of the critical transverse field on film thickness, and phase diagrams in the fields, critical surface transverse field versus the bulk one are presented

  14. Improvement in Brightness Uniformity by Compensating for the Threshold Voltages of Both the Driving Thin-Film Transistor and the Organic Light-Emitting Diode for Active-Matrix Organic Light-Emitting Diode Displays

    Ching-Lin Fan

    2014-01-01

    Full Text Available This paper proposes a novel pixel circuit design and driving method for active-matrix organic light-emitting diode (AM-OLED displays that use low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs as driving element. The automatic integrated circuit modeling simulation program with integrated circuit emphasis (AIM-SPICE simulator was used to verify that the proposed pixel circuit, which comprises five transistors and one capacitor, can supply uniform output current. The voltage programming method of the proposed pixel circuit comprises three periods: reset, compensation with data input, and emission periods. The simulated results reflected excellent performance. For instance, when ΔVTH=±0.33 V, the average error rate of the OLED current variation was low (<0.8%, and when ΔVTH_OLED=+0.33 V, the error rate of the OLED current variation was 4.7%. Moreover, when the I×R (current × resistance drop voltage of a power line was 0.3 V, the error rate of the OLED current variation was 5.8%. The simulated results indicated that the proposed pixel circuit exhibits high immunity to the threshold voltage deviation of both the driving poly-Si TFTs and OLEDs, and simultaneously compensates for the I×R drop voltage of a power line.

  15. Effect of Hydrogen Post-Annealing on Transparent Conductive ITO/Ga2O3 Bi-Layer Films for Deep Ultraviolet Light-Emitting Diodes.

    Kim, Kyeong Heon; Kim, Su Jin; Park, Sang Young; Kim, Tae Geun

    2015-10-01

    The effect of hydrogen post-annealing on the electrical and optical properties of ITO/Ga2O bi-layer films, deposited by RF magnetron sputtering, is investigated for potential applications to transparent conductive electrodes of ultraviolet (UV) light-emitting diodes. Three samples--an as-deposited sample and two samples post-annealed in N2 gas and N2-H2 gas mixture--were prepared and annealed at different temperatures ranging from 100 °C to 500 °C for comparison. Among these samples, the sample annealed at 300 °C in a mixture of N2 and H2 gases shows the lowest sheet resistance of 301.3 Ω/square and a high UV transmittance of 87.1% at 300 nm.

  16. SURFACE FILMS TO SUPPRESS FIELD EMISSION IN HIGH-POWER MICROWAVE COMPONENTS

    Hirshfield, Jay l

    2014-02-07

    Results are reported on attempts to reduce the RF breakdown probability on copper accelerator structures by applying thin surface films that could suppress field emission of electrons. Techniques for application and testing of copper samples with films of metals with work functions higher than copper are described, principally for application of platinum films, since platinum has the second highest work function of any metal. Techniques for application of insulating films are also described, since these can suppress field emission and damage on account of dielectric shielding of fields at the copper surface, and on account of the greater hardness of insulating films, as compared with copper. In particular, application of zirconium oxide films on high-field portions of a 11.424 GHz SLAC cavity structure for breakdown tests are described.

  17. Depolarization corrections to the coercive field in thin-film ferroelectrics

    Dawber, M; Chandra, P; Littlewood, P B; Scott, J F

    2003-01-01

    Empirically, the coercive field needed to reverse the polarization in a ferroelectric increases with decreasing film thickness. For ferroelectric films of 100 μm to 100 nm in thickness the coercive field has been successfully described by a semi-empirical scaling law. Accounting for depolarization corrections, we show that this scaling behaviour is consistent with field measurements of ultrathin ferroelectric capacitors down to one nanometre in film thickness. Our results also indicate that the minimum film thickness, determined by a polarization instability, can be tuned by the choice of electrodes, and recommendations for next-generation ferroelectric devices are discussed. (letter to the editor)

  18. Depolarization corrections to the coercive field in thin-film ferroelectrics

    Dawber, M; Littlewood, P B; Scott, J F

    2003-01-01

    Empirically, the coercive field needed to reverse the polarization in a ferroelectric increases with decreasing film thickness. For ferroelectric films of 100 mu m to 100 nm in thickness the coercive field has been successfully described by a semi-empirical scaling law. Accounting for depolarization corrections, we show that this scaling behaviour is consistent with field measurements of ultrathin ferroelectric capacitors down to one nanometre in film thickness. Our results also indicate that the minimum film thickness, determined by a polarization instability, can be tuned by the choice of electrodes, and recommendations for next-generation ferroelectric devices are discussed. (letter to the editor)

  19. Electron spin resonance study of the demagnetization fields of the ferromagnetic and paramagnetic films

    I.I. Gimazov, Yu.I. Talanov

    2015-12-01

    Full Text Available The results of the electron spin resonance study of the La1-xCaxMnO3 manganite and the diphenyl-picrylhydrazyl thin films for the magnetic field parallel and perpendicular to plane of the films are presented. The temperature dependence of the demagnetizing field is obtained. The parameters of the Curie-Weiss law are estimated for the paramagnetic thin film.

  20. Light output improvement of GaN-based light-emitting diodes grown on Si (111) by a via-thin-film structure

    Li, Zengcheng; Feng, Bo; Deng, Biao; Liu, Legong; Huang, Yingnan; Feng, Meixin; Zhou, Yu; Zhao, Hanmin; Sun, Qian; Wang, Huaibing; Yang, Xiaoli; Yang, Hui

    2018-04-01

    This work reports the fabrication of via-thin-film light-emitting diode (via-TF-LED) to improve the light output power (LOP) of blue/white GaN-based LEDs grown on Si (111) substrates. The as-fabricated via-TF-LEDs were featured with a roughened n-GaN surface and the p-GaN surface bonded to a wafer carrier with a silver-based reflective electrode, together with an array of embedded n-type via pillar metal contact from the p-GaN surface etched through the multiple-quantum-wells (MQWs) into the n-GaN layer. When operated at 350 mA, the via-TF-LED gave an enhanced blue LOP by 7.8% and over 3.5 times as compared to the vertical thin-film LED (TF-LED) and the conventional lateral structure LED (LS-LED). After covering with yellow phosphor that converts some blue photons into yellow light, the via-TF-LED emitted an enhanced white luminous flux by 13.5% and over 5 times, as compared with the white TF-LED and the white LS-LED, respectively. The significant LOP improvement of the via-TF-LED was attributed to the elimination of light absorption by the Si (111) epitaxial substrate and the finger-like n-electrodes on the roughened emitting surface. Project supported by the National Key R&D Program (Nos. 2016YFB0400100, 2016YFB0400104), the National Natural Science Foundation of China (Nos. 61534007, 61404156, 61522407, 61604168, 61775230), the Key Frontier Scientific Research Program of the Chinese Academy of Sciences (No. QYZDB-SSW-JSC014), the Science and Technology Service Network Initiative of the Chinese Academy of Sciences, the Key R&D Program of Jiangsu Province (No. BE2017079), the Natural Science Foundation of Jiangsu Province (No. BK20160401), and the China Postdoctoral Science Foundation (No. 2016M591944). This work was also supported by the Open Fund of the State Key Laboratory of Luminescence and Applications (No. SKLA-2016-01), the Open Fund of the State Key Laboratory on Integrated Optoelectronics (Nos. IOSKL2016KF04, IOSKL2016KF07), and the Seed Fund from SINANO

  1. Portable light-emitting diode-based photometer with one-shot optochemical sensors for measurement in the field.

    Palma, A J; Ortigosa, J M; Lapresta-Fernández, A; Fernández-Ramos, M D; Carvajal, M A; Capitán-Vallvey, L F

    2008-10-01

    This report describes the electronics of a portable, low-cost, light-emitting diode (LED)-based photometer dedicated to one-shot optochemical sensors. Optical detection is made through a monolithic photodiode with an on-chip single-supply transimpedance amplifier that reduces some drawbacks such as leakage currents, interferences, and parasitic capacitances. The main instrument characteristics are its high light source stability and thermal correction. The former is obtained by means of the optical feedback from the LED polarization circuit, implementing a pseudo-two light beam scheme from a unique light source with a built-in beam splitter. The feedback loop has also been used to adjust the LED power in several ranges. Moreover, the low-thermal coefficient achieved (-90 ppm/degrees C) is compensated by thermal monitoring and calibration function compensation in the digital processing. The hand-held instrument directly gives the absorbance ratio used as the analytical parameter and the analyte concentration after programming the calibration function in the microcontroller. The application of this photometer for the determination of potassium and nitrate, using one-shot sensors with ionophore-based chemistries is also demonstrated, with a simple analytical methodology that shortens the analysis time, eliminating some calibrating solutions (HCl, NaOH, and buffer). Therefore, this compact instrument is suitable for real-time analyte determination and operation in the field.

  2. Magnetic field enhanced electroluminescence in organic light emitting diodes based on electron donor-acceptor exciplex blends

    Baniya, Sangita; Basel, Tek; Sun, Dali; McLaughlin, Ryan; Vardeny, Zeev Valy

    2016-03-01

    A useful process for light harvesting from injected electron-hole pairs in organic light emitting diodes (OLED) is the transfer from triplet excitons (T) to singlet excitons (S) via reverse intersystem crossing (RISC). This process adds a delayed electro-luminescence (EL) emission component that is known as thermally activated delayed fluorescence (TADF). We have studied electron donor (D)/acceptor(A) blends that form an exciplex manifold in which the energy difference, ΔEST between the lowest singlet (S1) and triplet (T1) levels is relatively small (exciplex blend is enhanced up to 40% by applying a relatively weak magnetic field of 50 mT at ambient. Moreover the MEL response is activated with activation energy similar that of the EL emission. This suggests that the large magneto-EL originates from an additional spin-mixing channel between singlet and triplet states of the generated exciplexes, which is due to TADF. We will report on the MEL dependencies on the temperature, bias voltage, and D-A materials for optimum OLED performance. Supported by SAMSUNG Global Research Outreach (GRO) program, and also by the NSF-Material Science & Engineering Center (MRSEC) program at the University of Utah (DMR-1121252).

  3. Exposure to Mobile Phone-Emitted Electromagnetic Fields and Human Attention: No Evidence of a Causal Relationship

    Giuseppe Curcio

    2018-02-01

    Full Text Available In the past 20 years of research regarding effects of mobile phone-derived electromagnetic fields (EMFs on human cognition, attention has been one of the first and most extensively investigated functions. Different domains investigated covered selective, sustained, and divided attention. Here, the most relevant studies on this topic have been reviewed and discussed. A total of 43 studies are reported and summarized: of these, 31 indicated a total absence of statistically significant difference between real and sham signal, 9 showed a partial improvement of attentional performance (mainly increase in speed of performance and/or improvement of accuracy as a function of real exposure, while the remaining 3 showed inconsistent results (i.e., increased speed in some tasks and slowing in others or even a worsening in performance (reduced speed and/or deteriorated accuracy. These results are independent of the specific attentional domain investigated. This scenario allows to conclude that there is a substantial lack of evidence about a negative influence of non-ionizing radiations on attention functioning. Nonetheless, published literature is very heterogeneous under the point of view of methodology (type of signal, exposure time, blinding, dosimetry (accurate evaluation of specific absorption rate-SAR or emitted power, and statistical analyses, making arduous a conclusive generalization to everyday life. Some remarks and suggestions regarding future research are proposed.

  4. Exposure to Mobile Phone-Emitted Electromagnetic Fields and Human Attention: No Evidence of a Causal Relationship.

    Curcio, Giuseppe

    2018-01-01

    In the past 20 years of research regarding effects of mobile phone-derived electromagnetic fields (EMFs) on human cognition, attention has been one of the first and most extensively investigated functions. Different domains investigated covered selective, sustained, and divided attention. Here, the most relevant studies on this topic have been reviewed and discussed. A total of 43 studies are reported and summarized: of these, 31 indicated a total absence of statistically significant difference between real and sham signal, 9 showed a partial improvement of attentional performance (mainly increase in speed of performance and/or improvement of accuracy) as a function of real exposure, while the remaining 3 showed inconsistent results (i.e., increased speed in some tasks and slowing in others) or even a worsening in performance (reduced speed and/or deteriorated accuracy). These results are independent of the specific attentional domain investigated. This scenario allows to conclude that there is a substantial lack of evidence about a negative influence of non-ionizing radiations on attention functioning. Nonetheless, published literature is very heterogeneous under the point of view of methodology (type of signal, exposure time, blinding), dosimetry (accurate evaluation of specific absorption rate-SAR or emitted power), and statistical analyses, making arduous a conclusive generalization to everyday life. Some remarks and suggestions regarding future research are proposed.

  5. Field-angle dependence of magnetic resonance in Pt/NiFe films

    Inoue, H.Y.; Harii, K.; Saitoh, E.

    2007-01-01

    Ferromagnetic resonance in NiFe/ amorphous Pt bilayer thin films was investigated with changing the external field direction. The spectral width of the ferromagnetic resonance depends critically on the external-magnetic-field direction. We found that the sample dependence of the spectral width is enhanced with deviation of external field direction from the direction along the film plain, implying an important role of spin directions in field-induced spin-decoherence mechanism in Pt

  6. Cesium-incorporated indium-tin-oxide films for use as a cathode with low work function for a transparent organic light-emitting device

    Uchida, Takayuki; Mimura, Toshifumi; Ohtsuka, Masao; Otomo, Toshio; Ide, Mieko; Shida, Azusa; Sawada, Yutaka

    2006-01-01

    Transparent organic light-emitting devices (TOLEDs) were successfully fabricated utilizing a novel transparent conducting cathode with low work function. Cesium-incorporated indium-tin-oxide film was deposited on the organic layers with negligible damage by simultaneous operation of RF magnetron sputtering using an ITO target and vacuum evaporation of metallic cesium. Incorporation of cesium in the ITO film was confirmed by XPS analysis. The work function (4.3 eV) determined by photoelectron spectroscopy in air (PESA) was lower than that of 0.3-0.4-eV without cesium-incorporation and stable under the atmospheric environment. The electron injection efficiency of cesium-incorporated ITO cathode in the present transparent OLED fabricated was comparable to that of the previous double-layered structure comprising of ITO cathode and an organic buffer layer (BCP) doped by evaporation of cesium [T. Uchida, S. Kaneta, M. Ichihara, M. Ohtsuka, T. Otomo, D.R. Marx, Jpn. J. Appl. Phys., 44, No. 9 (2005) L282

  7. Carbon nanotube-graphene composite film as transparent conductive electrode for GaN-based light-emitting diodes

    Kang, Chun Hong

    2016-08-23

    Transparent conductive electrodes (TCE) made of carbon nanotube (CNT) and graphene composite for GaN-based light emitting diodes (LED) are presented. The TCE with 533-Ω/□ sheet resistance and 88% transmittance were obtained when chemical-vapor-deposition grown graphene was fused across CNT networks. With an additional 2-nm thin NiOx interlayer between the TCE and top p-GaN layer of the LED, the forward voltage was reduced to 5.12 V at 20-mA injection current. Four-fold improvement in terms of light output power was observed. The improvement can be ascribed to the enhanced lateral current spreading across the hybrid CNT-graphene TCE before injection into the p-GaN layer.

  8. Carbon nanotube-graphene composite film as transparent conductive electrode for GaN-based light-emitting diodes

    Kang, Chun Hong; Shen, Chao; M. Saheed, M. Shuaib; Mohamed, Norani Muti; Ng, Tien Khee; Ooi, Boon S.; Burhanudin, Zainal Arif

    2016-01-01

    Transparent conductive electrodes (TCE) made of carbon nanotube (CNT) and graphene composite for GaN-based light emitting diodes (LED) are presented. The TCE with 533-Ω/□ sheet resistance and 88% transmittance were obtained when chemical-vapor-deposition grown graphene was fused across CNT networks. With an additional 2-nm thin NiOx interlayer between the TCE and top p-GaN layer of the LED, the forward voltage was reduced to 5.12 V at 20-mA injection current. Four-fold improvement in terms of light output power was observed. The improvement can be ascribed to the enhanced lateral current spreading across the hybrid CNT-graphene TCE before injection into the p-GaN layer.

  9. Effect of the electric field during annealing of organic light emitting diodes for improving its on/off ratio.

    Sharma, Rahul K; Katiyar, Monica; Rao, I V Kameshwar; Unni, K N Narayanan; Deepak

    2016-01-28

    If an organic light emitting diode is to be used as part of a matrix addressed array, it should exhibit low reverse leakage current. In this paper we present a method to improve the on/off ratio of such a diode by simultaneous application of heat and electric field post device fabrication. A green OLED with excellent current efficiency was seen to be suffering from a poor on/off ratio of 10(2). After examining several combinations of annealing along with the application of a reverse bias voltage, the on/off ratio of the same device could be increased by three orders of magnitude, specifically when the device was annealed at 80 °C under reverse bias (-15 V) followed by slow cooling also under the same bias. Simultaneously, the forward characteristics of the device were relatively unaffected. The reverse leakage in the OLED is mainly due to the injection of minority carriers in the hole transport layer (HTL) and the electron transport layer (ETL), in this case, of holes in tris-(8-hydroxyquinoline)aluminum(Alq3) and electrons in 4,4',4''-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA). Hence, to investigate these layers adjacent to the electrodes, we fabricated their single layer devices. The possibility of bulk traps present adjacent to electrodes providing states for injection was ruled out after estimating the trap density both before and after the reverse biased annealing. The temperature independent current in reverse bias ruled out the possibility of thermionic injection. The origin of the reverse bias current is attributed to the availability of interfacial hole levels in Alq3 at the cathode work function level in the as-fabricated device; the suppression of the same being attributed to the fact that these levels in Alq3 are partly removed after annealing under an electric field.

  10. Influence of standing-wave fields on the laser damage resistance of dielectric films

    Newnam, B.E.; Gill, D.H.; Faulkner, G.

    1973-01-01

    The influence of standing-wave electric fields on the damage resistance of dielectric thin films was evaluated for the case of 30-ps laser pulses at 1.06 μm. Single-layer films of TiO 2 , ZrO 2 , SiO 2 , and MgF 2 were deposited by state-of-the-art electron-gun evaporation on BK-7 glass substrates with uniform surface preparation. The film thicknesses ranged from one to five quarter-wave increments. The thresholds for TiO 2 films of odd quarter-wave thickness were greater than for even multiples which correlated well with the calculated internal maximum electric fields. Threshold variations for ZrO 2 films were apparent but not as distinctly periodic with film thickness. Negligible variations were obtained for SiO 2 films, again correlating with electric-field calculations. Results of additional tests allowed comparisons of thresholds for 1) back-and front-surface films for normal incidence; 2) S- and P-polarized radiation at an incidence angle of 60 0 ; and 3) circular and linear polarizations for normal incidence. The thresholds were compared with calculated standing-wave field patterns at various locations in the films. A correlation was generally found between the internal field maxima and the thresholds, but in a few coatings, defects apparently decreased or prevented any correlation. (auth)

  11. Characterization of solution processed, p-doped films using hole-only devices and organic field-effect transistors

    Swensen, James S.; Wang, Liang (Frank); Rainbolt, James E.; Koech, Phillip K.; Polikarpov, Evgueni; Gaspar, Daniel J.; Padmaperuma, Asanga B.

    2012-12-01

    We report a solution-processed approach for a p-type doped hole transport layer in organic light emitting devices (OLEDs). UV-vis-NIR absorption spectra identified the charge transfer between the donor and acceptor in the solution processed doped films. Single carrier device and field-effect transistor were utilized as test vehicles to study the charge transport property and extract important parameters such as bulk mobile carrier concentration and mobility. OLEDs with p-type doped hole transport layer showed significant improvement in power efficiency up to 30% at the optimal doping ratio. This approach has the great potential to reduce the power consumption for OLED solid state lighting while lowering the cost and boosting the throughput of its manufacturing.

  12. Combined effect of nitrogen doping and nanosteps on microcrystalline diamond films for improvement of field emission

    Mengui, U.A.; Campos, R.A.; Alves, K.A.; Antunes, E.F.; Hamanaka, M.H.M.O.; Corat, E.J.; Baldan, M.R.

    2015-01-01

    Highlights: • Hot filament chemical vapor deposition using methane, hydrogen and a solution of urea in methanol produced nitrogen-doped diamond films. • Diamonds had the grain morphology changed for long growth time (28 h), and the nitrogen doping were evaluated by Raman spectroscopy. • Field emission characterization shows a decrease up to 70% in threshold field, related to reference diamond layer. - Abstract: Nitrogen-doped microcrystalline diamond (N-MCD) films were grown on Si substrates using a hot filament reactor with methanol solution of urea as N source. Electrostatic self-assembly seeding of nanocrystalline diamond were used to obtain continuous and uniform films. Simultaneous changes in grains morphology and work function of diamond by nitrogen doping decreased the threshold field and the angular coefficient of Fowler–Nordhein plots. The field emission properties of our N-MCD films are comparable to carbon nanotube films

  13. Combined effect of nitrogen doping and nanosteps on microcrystalline diamond films for improvement of field emission

    Mengui, U.A., E-mail: ursulamengui@gmail.com [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil); Campos, R.A.; Alves, K.A.; Antunes, E.F. [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil); Hamanaka, M.H.M.O. [Centro de Tecnologia da Informação Renato Archer, Divisão de Superfícies de Interação e Displays, Rodovia D. Pedro I (SP 65) km 143.6, CP 6162, CEP 13089-500, Campinas, SP (Brazil); Corat, E.J.; Baldan, M.R. [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil)

    2015-04-15

    Highlights: • Hot filament chemical vapor deposition using methane, hydrogen and a solution of urea in methanol produced nitrogen-doped diamond films. • Diamonds had the grain morphology changed for long growth time (28 h), and the nitrogen doping were evaluated by Raman spectroscopy. • Field emission characterization shows a decrease up to 70% in threshold field, related to reference diamond layer. - Abstract: Nitrogen-doped microcrystalline diamond (N-MCD) films were grown on Si substrates using a hot filament reactor with methanol solution of urea as N source. Electrostatic self-assembly seeding of nanocrystalline diamond were used to obtain continuous and uniform films. Simultaneous changes in grains morphology and work function of diamond by nitrogen doping decreased the threshold field and the angular coefficient of Fowler–Nordhein plots. The field emission properties of our N-MCD films are comparable to carbon nanotube films.

  14. Educational Film Studies: A Burgeoning Field of Research

    Bruch, Anne

    2016-01-01

    Since the 1890s early film pioneers used their cinematographic oeuvre for educational and informative purposes. As a result not only did film production companies regard schools as a lucrative emerging market, but progressive teachers also welcomed this new resource for teaching and learning. Soon a professional infrastructure was created and…

  15. CuS p-type thin film characterization deposited on Ti, ITO and glass substrates using spray pyrolysis deposition (SPD) for light emitting diode (LED) application

    Sabah, Fayroz A., E-mail: fayroz-arif@yahoo.com [Institue of Nano-Optoelectronics Research and Technology (INOR), School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Department of Electrical Engineering, College of Engineering, Al-Mustansiriya University, Baghdad (Iraq); Ahmed, Naser M., E-mail: naser@usm.my; Hassan, Z., E-mail: zai@usm.my; Azzez, Shrook A. [Institue of Nano-Optoelectronics Research and Technology (INOR), School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Rasheed, Hiba S., E-mail: hibasaad1980@yahoo.com [Institue of Nano-Optoelectronics Research and Technology (INOR), School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Department of Physics, College of Education, Al-Mustansiriya University, Baghdad (Iraq); Al-Hazim, Nabeel Z., E-mail: nabeelnano333@gmail.com [Institue of Nano-Optoelectronics Research and Technology (INOR), School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Ministry of Education, the General Directorate for Educational Anbar (Iraq)

    2016-07-06

    The copper sulphide (CuS) thin films were grown with good adhesion by spray pyrolysis deposition (SPD) on Ti, ITO and glass substrates at 200 °C. The distance between nozzle and substrate is 30 cm. The composition was prepared by mixing copper chloride CuCl{sub 2}.2H{sub 2}O as a source of Cu{sup 2+} and sodium thiosulfate Na{sub 2}S{sub 2}O{sub 3}.5H{sub 2}O as a source of and S{sup 2−}. Two concentrations (0.2 and 0.4 M) were used for each CuCl{sub 2} and Na{sub 2}S{sub 2}O{sub 3} to be prepared and then sprayed (20 ml). The process was started by spraying the solution for 3 seconds and after 10 seconds the cycle was repeated until the solution was sprayed completely on the hot substrates. The structural characteristics were studied using X-ray diffraction; they showed covellite CuS hexagonal crystal structure for 0.2 M concentration, and covellite CuS hexagonal crystal structure with two small peaks of chalcocite Cu{sub 2}S hexagonal crystal structure for 0.4 M concentration. Also the surface and electrical characteristics were investigated using Field Emission Scanning Electron Microscopy (FESEM) and current source device, respectively. The surface study for the CuS thin films showed nanorods to be established for 0.2 M concentration and mix of nanorods and nanoplates for 0.4 M concentration. The electrical study showed ohmic behavior and low resistivity for these films. Hall Effect was measured for these thin films, it showed that all samples of CuS are p- type thin films and ensured that the resistivity for thin films of 0.2 M concentration was lower than that of 0.4 M concentration; and for the two concentrations CuS thin film deposited on ITO had the lowest resistivity. This leads to the result that the conductivity was high for CuS thin film deposited on ITO substrate, and the conductivity of the three thin films of 0.2 M concentration was higher than that of 0.4 M concentration.

  16. Depth of Field: Discursive design research through film

    Timo Arnall

    2010-07-01

    Full Text Available This article is about the role of film in interaction and product design research with technology, and the use of film in exploring and explaining emerging technologies in multiple contexts. We have engaged in a reflective design research process that uses graphical, audiovisual, and time-based media as a tool, a material and a communicative artefact that enables us to approach complex, obscure and often invisible emerging technologies. We give a discursive account of how film has played an intricate role in our design research practice, from revealing the materiality of invisible wireless technology, to explaining complex technical prototypes, to communicating to a public audience through online films that may fold broader social and cultural discourses back into our design research process. We conclude by elaborating on discursive design approaches to research that use film as a reflective and communicative medium that allows for design research to operate within a social and cultural frame.

  17. Hybrid fluorescent layer emitting polarized light

    Mohammad Mohammadimasoudi

    2017-07-01

    Full Text Available Semiconductor nanorods have anisotropic absorption and emission properties. In this work a hybrid luminescent layer is produced based on a mixture of CdSe/CdS nanorods dispersed in a liquid crystal that is aligned by an electric field and polymerized by UV illumination. The film emits light with polarization ratio 0.6 (polarization contrast 4:1. Clusters of nanorods in liquid crystal can be avoided by applying an AC electric field with sufficient amplitude. This method can be made compatible with large-scale processing on flexible transparent substrates. Thin polarized light emitters can be used in LCD backlights or solar concentrators to increase the efficiency.

  18. Effects of electromagnetic fields emitted by mobile phones (GSM 900 and WCDMA/UMTS) on the macrostructure of sleep.

    Danker-Hopfe, Heidi; Dorn, Hans; Bahr, Achim; Anderer, Peter; Sauter, Cornelia

    2011-03-01

    In the present double-blind, randomized, sham-controlled cross-over study, possible effects of electromagnetic fields emitted by Global System for Mobile Communications (GSM) 900 and Wideband Code-Division Multiple Access (WCDMA)/Universal Mobile Telecommunications System (UMTS) cell-phones on the macrostructure of sleep were investigated in a laboratory environment. An adaptation night, which served as screening night for sleep disorders and as an adjustment night to the laboratory environment, was followed by 9 study nights (separated by a 2-week interval) in which subjects were exposed to three exposure conditions (sham, GSM 900 and WCDMA/UMTS). The sample comprised 30 healthy male subjects within the age range 18-30 years (mean ± standard deviation: 25.3 ± 2.6 years). A cell-phone usage at maximum radio frequency (RF) output power was simulated and the transmitted power was adjusted in order to approach, but not to exceed, the specific absorption rate (SAR) limits of the International Commission on Non-Ionizing Radiation Protection (ICNIRP) guidelines for general public exposure (SAR(10g) = 2.0 W kg(-1)). In this study, possible effects of long-term (8 h) continuous RF exposure on the central nervous system were analysed during sleep, because sleep is a state in which many confounding intrinsic and extrinsic factors (e.g. motivation, personality, attitude) are eliminated or controlled. Thirteen of 177 variables characterizing the initiation and maintenance of sleep in the GSM 900 and three in the WCDMA exposure condition differed from the sham condition. The few significant results are not indicative of a negative impact on sleep architecture. From the present results there is no evidence for a sleep-disturbing effect of GSM 900 and WCDMA exposure. © 2010 European Sleep Research Society.

  19. Modeling on the cathodoluminescence properties of the thin film phosphors for field emission flat panel displays

    Cho, Kyu-Gong

    2000-12-01

    utilized to optimize the thin film phosphor properties for the application of field emission flat panel displays.

  20. Quantum transition and decoherence of levitating polaron on helium film thickness under an electromagnetic field

    Kenfack, S. C.; Fotue, A. J.; Fobasso, M. F. C.; Djomou, J.-R. D.; Tiotsop, M.; Ngouana, K. S. L.; Fai, L. C.

    2017-12-01

    We have studied the transition probability and decoherence time of levitating polaron in helium film thickness. By using a variational method of Pekar type, the ground and the first excited states of polaron are calculated above the liquid-helium film placed on the polar substrate. It is shown that the polaron transits from the ground to the excited state in the presence of an external electromagnetic field in the plane. We have seen that, in the helium film, the effects of the magnetic and electric fields on the polaron are opposite. It is also shown that the energy, transition probability and decoherence time of the polaron depend sensitively on the helium film thickness. We found that decoherence time decreases as a function of increasing electron-phonon coupling strength and the helium film thickness. It is seen that the film thickness can be considered as a new confinement in our system and can be adjusted in order to reduce decoherence.

  1. Field electron emission characteristics of chemical vapour deposition diamond films with controlled sp2 phase concentration

    Lu, X.; Yang, Q.; Xiao, C.; Hirose, A.

    2008-01-01

    Diamond films were synthesized in a microwave plasma-enhanced chemical vapour deposition reactor. The microstructure and surface morphology of deposited films were characterized by Raman spectroscope and scanning electron microscope. The sp 2 phase concentration in diamond films was varied and its effect on the field electron emission (FEE) properties was investigated. Diamond films deposited under higher methane concentration exhibit better FEE property including lower turn-on electric field and larger emission current. The predominating factor modifying the FEE property is presumed to be the increase of sp 2 phase concentration. The influence of bias voltage on the FEE property of diamond films is not monotonic. Postgrowth acid treatment reduces the sp 2 phase content in diamond films without changing diamond grain sizes. The corresponding FEE property was degraded

  2. Effects of electric and magnetic fields on fluorescence in electron donor and acceptor pairs of pyrene and N-methylphthalimide doped in a polymer film

    Yoshizawa, Tomokazu [Research Institute for Electronic Science (RIES), Hokkaido University, N12, W6 Sapporo 060-0812 (Japan); Graduate School of Environmental Earth Science, Hokkaido University, Sapporo 060-0810 (Japan); Mizoguchi, Miwako [Graduate School of Environmental Earth Science, Hokkaido University, Sapporo 060-0810 (Japan); Iimori, Toshifumi [Research Institute for Electronic Science (RIES), Hokkaido University, N12, W6 Sapporo 060-0812 (Japan); Graduate School of Environmental Earth Science, Hokkaido University, Sapporo 060-0810 (Japan); Nakabayashi, Takakazu [Research Institute for Electronic Science (RIES), Hokkaido University, N12, W6 Sapporo 060-0812 (Japan); Graduate School of Environmental Earth Science, Hokkaido University, Sapporo 060-0810 (Japan); Ohta, Nobuhiro [Research Institute for Electronic Science (RIES), Hokkaido University, N12, W6 Sapporo 060-0812 (Japan); Graduate School of Environmental Earth Science, Hokkaido University, Sapporo 060-0810 (Japan)], E-mail: nohta@es.hokudai.ac.jp

    2006-05-09

    External electric-field-induced change in fluorescence spectra as well as in fluorescence decay has been measured for electron donor and acceptor pairs of pyrene (PY) and N-methylphthalimide (NMPI) doped in a polymer film. Field-induced quenching and field-induced shortening of lifetime are observed for fluorescence emitted from the locally excited (LE) state of PY, indicating that intermolecular electron transfer from the excited state of PY to NMPI is enhanced by an electric field in a polymer film. A simulation has been made for the field effect on decay profile of the LE fluorescence of PY. Exciplex fluorescence is also quenched by an electric field because of the field-induced decrease in the initial population of the fluorescent exciplex. Both in LE fluorescence of PY and in exciplex fluorescence, electric-field-induced quenching becomes less efficient in the presence of a magnetic field. The mechanism of the synergy effect of electric and magnetic fields on fluorescence has been discussed.

  3. Effects of electric and magnetic fields on fluorescence in electron donor and acceptor pairs of pyrene and N-methylphthalimide doped in a polymer film

    Yoshizawa, Tomokazu; Mizoguchi, Miwako; Iimori, Toshifumi; Nakabayashi, Takakazu; Ohta, Nobuhiro

    2006-01-01

    External electric-field-induced change in fluorescence spectra as well as in fluorescence decay has been measured for electron donor and acceptor pairs of pyrene (PY) and N-methylphthalimide (NMPI) doped in a polymer film. Field-induced quenching and field-induced shortening of lifetime are observed for fluorescence emitted from the locally excited (LE) state of PY, indicating that intermolecular electron transfer from the excited state of PY to NMPI is enhanced by an electric field in a polymer film. A simulation has been made for the field effect on decay profile of the LE fluorescence of PY. Exciplex fluorescence is also quenched by an electric field because of the field-induced decrease in the initial population of the fluorescent exciplex. Both in LE fluorescence of PY and in exciplex fluorescence, electric-field-induced quenching becomes less efficient in the presence of a magnetic field. The mechanism of the synergy effect of electric and magnetic fields on fluorescence has been discussed

  4. The optimum circular field size for dental radiography with intraoral films

    van Straaten, F.J.; van Aken, J.

    1982-01-01

    Intraoral radiographs are often made with circular fields to irradiate the film, and in many instances these fields are much larger than the film. The feasibility of reducing a circular radiation field without increasing the probability of excessive cone cutting was evaluated clinically, and an optimum field size was determined. A circular radiation field 4.5 cm. at the tube end was found to minimize cone cutting and reduce the area of tissue irradiated by at least 44 percent. Findings suggest that current I.C.R.P. recommendations for a 6 to 7.5 cm. diameter circular field may be too liberal

  5. Electric-field-induced monoclinic phase in (Ba,Sr)TiO3 thin film

    Anokhin, A. S.; Yuzyuk, Yu. I.; Golovko, Yu. I.; Mukhortov, V. M.; El Marssi, M.

    2011-01-01

    We have studied electric-field-induced symmetry lowering in the tetragonal (001)-oriented heteroepitaxial (Ba 0.8 Sr 0.2 )TiO 3 thin film deposited on (001)MgO substrate. Polarized micro-Raman spectra were recorded from the film area in between two planar electrodes deposited on the film surface. Presence of c domains with polarization normal to the substrate was confirmed from polarized Raman study under zero field, while splitting and hardening of the E(TO) soft mode and polarization changes in the Raman spectra suggest monoclinic symmetry under external electric field.

  6. Characterization of Alq3 thin films by a near-field microwave microprobe.

    Hovsepyan, Artur; Lee, Huneung; Sargsyan, Tigran; Melikyan, Harutyun; Yoon, Youngwoon; Babajanyan, Arsen; Friedman, Barry; Lee, Kiejin

    2008-09-01

    We observed tris-8-hydroxyquinoline aluminum (Alq3) thin films dependence on substrate heating temperatures by using a near-field microwave microprobe (NFMM) and by optical absorption at wavelengths between 200 and 900 nm. The changes of absorption intensity at different substrate heating temperatures are correlated to the changes in the sheet resistance of Alq3 thin films.

  7. Thin-Film Photoluminescent Properties and the Atomistic Model of Mg2TiO4 as a Non-rare Earth Matrix Material for Red-Emitting Phosphor

    Huang, Chieh-Szu; Chang, Ming-Chuan; Huang, Cheng-Liang; Lin, Shih-kang

    2016-12-01

    Thin-film electroluminescent devices are promising solid-state lighting devices. Red light-emitting phosphor is the key component to be integrated with the well-established blue light-emitting diode chips for stimulating natural sunlight. However, environmentally hazardous rare-earth (RE) dopants, e.g. Eu2+ and Ce2+, are commonly used for red-emitting phosphors. Mg2TiO4 inverse spinel has been reported as a promising matrix material for "RE-free" red light luminescent material. In this paper, Mg2TiO4 inverse spinel is investigated using both experimental and theoretical approaches. The Mg2TiO4 thin films were deposited on Si (100) substrates using either spin-coating with the sol-gel process, or radio frequency sputtering, and annealed at various temperatures ranging from 600°C to 900°C. The crystallinity, microstructures, and photoluminescent properties of the Mg2TiO4 thin films were characterized. In addition, the atomistic model of the Mg2TiO4 inverse spinel was constructed, and the electronic band structure of Mg2TiO4 was calculated based on density functional theory. Essential physical and optoelectronic properties of the Mg2TiO4 luminance material as well as its optimal thin-film processing conditions were comprehensively reported.

  8. The photocatalytic degradation of methylene blue by green semiconductor films that is induced by irradiation by a light-emitting diode and visible light.

    Yang, Chih-Chi; Doong, Ruey-An; Chen, Ku-Fan; Chen, Giin-Shan; Tsai, Yung-Pin

    2018-01-01

    This study develops a low-energy rotating photocatalytic contactor (LE-RPC) that has Cu-doped TiO 2 films coated on stainless-steel rotating disks, to experimentally evaluate the efficiency of the degradation and decolorization of methylene blue (MB) under irradiation from different light sources (visible 430 nm, light-emitting diode [LED] 460 nm, and LED 525 nm). The production of hydroxyl radicals is also examined. The experimental results show that the photocatalytic activity of TiO 2 that is doped with Cu 2+ is induced by illumination with visible light and an LED. More than 90% of methylene blue at a 10 mg/L concentration is degraded after illumination by visible light (430 nm) for 4 hr at 20 rpm. This study also demonstrates that the quantity of hydroxyl radicals produced is directly proportional to the light energy intensity. The greater the light energy intensity, the greater is the number of hydroxyl radicals produced. The CuO-doped anatase TiO 2 powder was successfully synthesized in this study by a sol-gel method. The catalytic abilities of the stainless-steel film were enhanced in the visible light regions. This study has successfully modified the nano-photocatalytic materials to drop band gap and has also successfully fixed the nano-photocatalytic materials on a substratum to effectively treat dye wastewater in the range of visible light. The results can be useful to the development of a low-energy rotating photocatalytic contactor for decontamination purposes.

  9. Effect of alcohol vapor treatment on electrical and optical properties of poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) films for indium tin oxide-free organic light-emitting diodes

    Fallahzadeh, Ali, E-mail: afa.phy@gmail.com; Saghaei, Jaber; Yousefi, Mohammad Hassan

    2014-11-30

    Graphical abstract: - Highlights: • A simple alcohol vapor treatment (AVT) technique was applied to enhance the conductivity of PEDOT:PSS films. • Alcohols with one OH group can improve conductivity of PEDOT:PSS films by this technique. • Mechanism of conductivity enhancement of PEDOT:PSS films by AVT method was explained. • ITO-free OLEDs were fabricated using highly conductive AVT PEDOT:PSS films standalone anode. - Abstract: A simple alcohol vapor treatment (AVT) technique was proposed to improve the conductivity of poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) films. In this technique, various alcohols, i.e. methanol, ethanol, 2-propanol and ethylene glycol, were applied to treat the surface of the films formed and then they were annealed. The sheet resistance of PEDOT:PSS films was significantly reduced from 130 kΩ/sq to 60 Ω/sq when treated with methanol vapor. The investigation of the vertical resistance of the films showed that the sample treated with methanol vapor displayed the lowest resistance as well. The mechanism of conductivity enhancement of PEDOT:PSS films through AVT method was explained by surface phase images, UV and IR spectra of PEDOT:PSS films. Optical transmittance spectrum of treated films exhibited that AVT has even enhanced the optical transmittance slightly. Improvement in the morphology, electrical and optical properties of PEDOT:PSS films prompted their applications as a transparent anode in the fabrication of ITO-free organic light-emitting diodes (OLEDs). The OLED manufactured based on methanol-treated PEDOT:PSS films demonstrated the highest luminance.

  10. Numerical analysis of light extraction enhancement of GaN-based thin-film flip-chip light-emitting diodes with high-refractive-index buckling nanostructures

    Yue, Qing-Yang; Yang, Yang; Cheng, Zhen-Jia; Guo, Cheng-Shan

    2018-06-01

    In this work, the light extraction efficiency enhancement of GaN-based thin-film flip-chip (TFFC) light-emitting diodes (LEDs) with high-refractive-index (TiO2) buckling nanostructures was studied using the three-dimensional finite difference time domain method. Compared with 2-D photonic crystals, the buckling structures have the advantages of a random directionality and a broad distribution in periodicity, which can effectively extract the guided light propagating in all azimuthal directions over a wide spectrum. Numerical studies revealed that the light extraction efficiency of buckling-structured LEDs reaches 1.1 times that of triangular lattice photonic crystals. The effects of the buckling structure feature sizes and the thickness of the N-GaN layer on the light extraction efficiency for TFFC LEDs were also investigated systematically. With optimized structural parameters, a significant light extraction enhancement of about 2.6 times was achieved for TiO2 buckling-structured TFFC LEDs compared with planar LEDs.

  11. ITO films realized at room-temperature by ion beam sputtering for high-performance flexible organic light-emitting diodes

    Lucas, B.; Rammal, W.; Moliton, A. [Limoges Univ., Faculte des Sciences et Techniques, CNRS, UMR 6172, Institut de Recherche XLIM, Dept. MINACOM, 87 - Limoges (France)

    2006-06-15

    Indium-tin oxide (ITO) thin layers are obtained by an IBS (Ion Beam Sputtering) deposition process. We elaborated ITO films on flexible substrates of polyethylene terephthalate (PET), under soft conditions of low temperatures and fulfilling the requirements of fabrication processes of the organic optoelectronic components. With a non thermally activated (20 Celsius degrees) ITO deposition assisted by an oxygen flow (1 cm{sup 3}/min), we got an optical transmittance of 90% in the visible range, a resistivity around 10{sup -3} {omega}.cm and a surface roughness lower than 1.5 mm. Thus we realized flexible organic light-emitting diodes (FOLEDs) with good performances: a maximum luminance of 12000 cd/m{sup 2} at a voltage of 19 V and a maximum luminous power efficiency around 1 lm/W at a voltage of 10 V (or a maximum current efficiency of 4 cd/A at 14 V) for the (PET(50 {mu}m) / ITO(200 nm) / TPD(40 nm) / Alq3(60 nm) / Ca / Al) structure. (authors)

  12. Mobile Phone Chips Reduce Increases in EEG Brain Activity Induced by Mobile Phone-Emitted Electromagnetic Fields.

    Henz, Diana; Schöllhorn, Wolfgang I; Poeggeler, Burkhard

    2018-01-01

    Recent neurophysiological studies indicate that exposure to electromagnetic fields (EMFs) generated by mobile phone radiation can exert effects on brain activity. One technical solution to reduce effects of EMFs in mobile phone use is provided in mobile phone chips that are applied to mobile phones or attached to their surfaces. To date, there are no systematical studies on the effects of mobile phone chip application on brain activity and the underlying neural mechanisms. The present study investigated whether mobile phone chips that are applied to mobile phones reduce effects of EMFs emitted by mobile phone radiation on electroencephalographic (EEG) brain activity in a laboratory study. Thirty participants volunteered in the present study. Experimental conditions (mobile phone chip, placebo chip, no chip) were set up in a randomized within-subjects design. Spontaneous EEG was recorded before and after mobile phone exposure for two 2-min sequences at resting conditions. During mobile phone exposure, spontaneous EEG was recorded for 30 min during resting conditions, and 5 min during performance of an attention test (d2-R). Results showed increased activity in the theta, alpha, beta and gamma bands during EMF exposure in the placebo and no chip conditions. Application of the mobile phone chip reduced effects of EMFs on EEG brain activity and attentional performance significantly. Attentional performance level was maintained regarding number of edited characters. Further, a dipole analysis revealed different underlying activation patterns in the chip condition compared to the placebo chip and no chip conditions. Finally, a correlational analysis for the EEG frequency bands and electromagnetic high-frequency (HF) emission showed significant correlations in the placebo chip and no chip condition for the theta, alpha, beta, and gamma bands. In the chip condition, a significant correlation of HF with the theta and alpha bands, but not with the beta and gamma bands was

  13. Mobile Phone Chips Reduce Increases in EEG Brain Activity Induced by Mobile Phone-Emitted Electromagnetic Fields

    Henz, Diana; Schöllhorn, Wolfgang I.; Poeggeler, Burkhard

    2018-01-01

    Recent neurophysiological studies indicate that exposure to electromagnetic fields (EMFs) generated by mobile phone radiation can exert effects on brain activity. One technical solution to reduce effects of EMFs in mobile phone use is provided in mobile phone chips that are applied to mobile phones or attached to their surfaces. To date, there are no systematical studies on the effects of mobile phone chip application on brain activity and the underlying neural mechanisms. The present study investigated whether mobile phone chips that are applied to mobile phones reduce effects of EMFs emitted by mobile phone radiation on electroencephalographic (EEG) brain activity in a laboratory study. Thirty participants volunteered in the present study. Experimental conditions (mobile phone chip, placebo chip, no chip) were set up in a randomized within-subjects design. Spontaneous EEG was recorded before and after mobile phone exposure for two 2-min sequences at resting conditions. During mobile phone exposure, spontaneous EEG was recorded for 30 min during resting conditions, and 5 min during performance of an attention test (d2-R). Results showed increased activity in the theta, alpha, beta and gamma bands during EMF exposure in the placebo and no chip conditions. Application of the mobile phone chip reduced effects of EMFs on EEG brain activity and attentional performance significantly. Attentional performance level was maintained regarding number of edited characters. Further, a dipole analysis revealed different underlying activation patterns in the chip condition compared to the placebo chip and no chip conditions. Finally, a correlational analysis for the EEG frequency bands and electromagnetic high-frequency (HF) emission showed significant correlations in the placebo chip and no chip condition for the theta, alpha, beta, and gamma bands. In the chip condition, a significant correlation of HF with the theta and alpha bands, but not with the beta and gamma bands was

  14. Hole-exciton interaction induced high field decay of magneto-electroluminescence in Alq{sub 3}-based organic light-emitting diodes at room temperature

    Zhang, Tingting; Holford, D. F.; Gu, Hang; Kreouzis, T. [Materials Research Institute and School of Physics and Astronomy, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom); Zhang, Sijie, E-mail: Sijie.zhang@scu.edu.cn, E-mail: w.gillin@qmul.ac.uk [College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Gillin, W. P., E-mail: Sijie.zhang@scu.edu.cn, E-mail: w.gillin@qmul.ac.uk [Materials Research Institute and School of Physics and Astronomy, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom); College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China)

    2016-01-11

    The magnetic field effects on the electroluminescence of aluminium tris-(8-hydroxyqinoline) (Alq{sub 3}) based organic light emitting diodes have been investigated by varying the electron/hole ratio in the emissive layer. Experimental results reveal that a negative high field effect in the magneto-electroluminescence (MEL) can be found in devices with very low triplet exciton concentration at room temperature. This suggests triplet-triplet annihilation cannot be used to explain the negative high field MEL in the Alq{sub 3} system. Our results suggest that hole-exciton interaction may be the origin of the negative high field MEL and also, in parallel with this interaction, there is also the more common positive high field process occurring which has been tentatively attributed to electron-exciton interactions. The competition between these different processes decides the final shape of the MEL at high fields.

  15. Hole-exciton interaction induced high field decay of magneto-electroluminescence in Alq3-based organic light-emitting diodes at room temperature

    Zhang, Tingting; Holford, D. F.; Gu, Hang; Kreouzis, T.; Zhang, Sijie; Gillin, W. P.

    2016-01-01

    The magnetic field effects on the electroluminescence of aluminium tris-(8-hydroxyqinoline) (Alq3) based organic light emitting diodes have been investigated by varying the electron/hole ratio in the emissive layer. Experimental results reveal that a negative high field effect in the magneto-electroluminescence (MEL) can be found in devices with very low triplet exciton concentration at room temperature. This suggests triplet-triplet annihilation cannot be used to explain the negative high field MEL in the Alq3 system. Our results suggest that hole-exciton interaction may be the origin of the negative high field MEL and also, in parallel with this interaction, there is also the more common positive high field process occurring which has been tentatively attributed to electron-exciton interactions. The competition between these different processes decides the final shape of the MEL at high fields.

  16. Controllable deposition of gadolinium doped ceria electrolyte films by magnetic-field-assisted electrostatic spray deposition

    Ksapabutr, Bussarin; Chalermkiti, Tanapol; Wongkasemjit, Sujitra; Panapoy, Manop

    2013-01-01

    This paper describes a simple and low-temperature approach to fabrication of dense and crack-free gadolinium doped ceria (GDC) thin films with controllable deposition by a magnetic-field-assisted electrostatic spray deposition technique. The influences of external permanent magnets on the deposition of GDC films were investigated. The coating area deposited using two magnets with the same pole arrangement decreased in comparison with the case of no magnets, whereas the largest deposition area was obtained in the system of the opposite poles. Analysis of as-deposited films at 450 °C indicated the formation of uniform, smooth and dense thin films with a single-phase fluorite structure. The films produced in the system using same poles were thicker, smaller in crystallite size and smoother than those fabricated under other conditions. Additionally, the GDC film deposited using the same pole arrangement showed the maximum in electrical conductivity of about 2.5 × 10 −2 S/cm at a low operating temperature of 500 °C. - Highlights: • Magnetic-field-assisted electrostatic spray allows a controllable coating. • Dense, crack-free thin films were obtained at low process temperature of 450 °C. • Control of deposition, thickness and uniformity is easy to achieve simultaneously. • Films from the same pole were thicker, smaller in crystal size and smoother. • The maximum conductivity of doped ceria film was 2.5 × 10 −2 S/cm at 500 °C

  17. Applications of interface controlled pulsed-laser deposited polymer films in field-effect transistors

    Adil, Danish; Ukah, Ndubuisi; Guha, Suchi; Gupta, Ram; Ghosh, Kartik

    2010-03-01

    Matrix assisted pulsed laser evaporation, a derivative of pulsed laser deposition (PLD), is an alternative method of depositing polymer and biomaterial films that allows homogeneous film coverage of high molecular weight organic materials for layer-by-layer growth without any laser induced damage. Polyfluorene (PF)-based conjugated polymers have attracted considerable attention in organic field-effect transistors (FETs). A co-polymer of PF (PFB) was deposited as a thin film using matrix assisted PLD employing a KrF excimer laser. Electrical characteristics of FETs fabricated using these PLD grown films were compared to those of FETs using spin-coated films. We show that threshold voltages, on/off ratios, and charge carrier motilities are significantly improved in PLD grown films. This is attributed to an improved dielectric-polymer interface.

  18. The order parameters of a spin-1 Ising film in a transverse field

    Saber, A.; Ainane, A.; Dujardin, F.; Saber, M.; Stebe, B.

    1998-08-01

    Using the effective field theory with a probability distribution technique that accounts for the self-spin correlation functions, the layer longitudinal magnetizations and quadrupolar moments of a spin-1 Ising film and their averages are examined. These quantities as functions of the temperature, the ratio of the surface exchange interactions to the bulk ones, the strength of the transverse field and the film thickness are calculated numerically and some interesting results are obtained. (author)

  19. Microwave study of magnetic field penetration parallel to thin niobium films

    Grbic, M.S.; Janjusevic, D.; Pozek, M.; Dulcic, A.; Wagner, T.

    2007-01-01

    Complex conductivity of high quality niobium thin films has been investigated by microwave technique in parallel static magnetic field. For the 40 nm thick film no vortices can be formed and the microwave penetration is defined by the strength of the superconducting order parameter which varies with the applied magnetic field. 160 nm thick measured film allows formation of two rows of vortices. Microwave dissipiation is dominated by dynamics of vortices which is strongly affected by size effects. Results have been compared with the generalised models of complex conductivity for low-dimensional superconductor in mixed state following earlier considerations by other authors

  20. Magnetic field dependence of the current flowing in the spin-coated chlorophyll thin films

    Aji, J. R. P.; Kusumandari; Purnama, B.

    2018-03-01

    The magnetic dependence of the current flowing in the spin coated chlorophyll films on a patterned Cu PCB substrate has been presented. Chlorophyll was isolated from Spirulina sp and deposited by spin coated methods. The reducing of current by the change of magnetic field (magneto conductance effect) was performed by inducing the magnetic field parallel to the inplane of film at room temp. The magnetoconductance ratio decreases as the increase of voltage. It was indicated that the origin of carrier charge in chlorophyll films should be different with the carrier charge injection (electron).

  1. High magnetic field quantum transport in Au nanoparticle–cellulose films

    Turyanska, L; Makarovsky, O; Patanè, A; Kozlova, N V; Liu, Z; Li, M; Mann, S

    2012-01-01

    We report the magneto-transport properties of cellulose films comprising interconnected networks of gold nanoparticles (Au NPs). Cellulose is a biopolymer that can be made electrically conducting by cellulose regeneration in Au NP dispersions. The mechanism of electronic conduction in the Au–cellulose films changes from variable range hopping to metallic-like conduction with decreasing resistivity. Our experiments in high magnetic fields (up to 45 T) reveal negative magnetoresistance in the highly resistive films. This is attributed to the spin polarization of the Au NPs and the magnetic field induced suppression of electron spin flips during spin-polarized tunneling in the NP network. (paper)

  2. Superconducting Film Flux Transformer for a Sensor of a Weak Magnetic Field

    Ichkitidze, L; Mironyuk, A

    2012-01-01

    The object of study is a superconducting film flux transformer in the form of a square shaped loop with the tapering operative strip used in a sensor of a weak magnetic field. The magnetosensitive film element based on the giant magnetoresistance effect is overlapped with the tapering operative strip of the flux transformer; it is separated from the latter by the insulator film. It is shown that the topological nanostructuring of the operative strip of the flux transformer increases its gain factor by one or more orders of magnitude, i.e. increases its efficiency, which leads to a significant improvement of important parameters of a magnetic-field sensor.

  3. The role of electric field during spray deposition on fluorine doped tin oxide film

    Kumar, Anuj, E-mail: anujkumarom@gmail.com; Swami, Sanjay Kumar; Dutta, Viresh

    2014-03-05

    Highlights: • Fluorine doped tin oxide deposition by spray technique. • The growth reaction of tin oxide, controlled by the electric field on the substrate surface. • Deposit on large scale substrate 10 cm × 10 cm by single nozzle. • Obtained good quality of thin film. -- Abstract: The fluorine doped tin oxide film has been deposited on 10 cm × 10 cm glass substrate by using spray technique with a voltage applied between the nozzle and an annular electrode placed 2 mm below the nozzle. The effect of the electric field thus created during the spray deposition on structural, optical and electrical properties of SnO{sub 2}:F (FTO) film was studied. X-ray diffraction pattern revealed the presence of cassiterite structure with (2 0 0) orientation for all the FTO film. SEM study revealed the formation of smooth and uniform surface FTO film under the electric field over the entire substrate area. The electrical measurements show that the film prepared under the electric field (for an applied voltage of 2000 V) had a resistivity ∼1.2 × 10{sup −3} Ω cm, carrier concentration ∼4.21 × 10{sup 20} cm{sup −3} and mobility ∼14.48 cm{sup 2} V{sup −1} s{sup −1}. The sprayed FTO film have the average transmission in the visible region of more than about 80%.

  4. Characterization of beta radiation fields using radiochromic films; Caracterizacao de campos de radiacao beta utilizando filmes radiocromicos

    Benavente, Jhonny A.; Silva, Teogenes A. da, E-mail: jabc@cdtn.b [Centro de Desenvolvimento da Tecnologia Nuclear (CDTN/CNEN-MG), Belo Horizonte, MG (Brazil). Programa de Pos-Graduacao em Ciencia e Tecnologia das Radiacoes, Minerais e Materiais; Meira-Belo, Luiz C.; Reynaldo, Sibele R. [Centro de Desenvolvimento da Tecnologia Nuclear (CDTN/CNEN-MG), Belo Horizonte, MG (Brazil)

    2011-07-01

    The objective of this work was to study the response of radiochromic films for beta radiation fields in terms of absorbed dose. The reliability of the EBT model Gafchromic radiochromic film was studied. A 9800 XL model Microtek, transmission scanner, a 369 model X-Rite optical densitometer and a Mini 1240 Shimadzu UV spectrophotometer were used for measurement comparisons. Calibration of the three systems was done with irradiated samples of radiochromic films with 0.1; 0.3; 0.5; 0.8; 1.0; 1.5; 2.0; 2.5; 3.0; 3.5; 4.5 e 5.0 Gy in beta radiation field from a Sr-90/Y-90 source. Calibration was performed by establishing a correlation between the absorbed dose values and the corresponding radiochromic responses. Results showed significant differences in the absorbed dose values obtained with the three methods. Absorbed dose values showed errors from 0.6 to 4.4%, 0.3 to 31.8% and 0.2 to 47.3% for the Microtek scanner, the X-Rite Densitometer and the Shimadzu spectrophotometer, respectively. Due to the easy acquisition and use for absorbed dose measurements, the densitometer and the spectrophotometer showed to be suitable techniques to evaluate radiation dose in relatively homogeneous fields. In the case of inhomogeneous fields or for a two dimension mapping of radiation fields to identify anisotropies, the scanner technique is the most recommended. (author)

  5. Pattern Formation in PMMA Film Induced by Electric Field

    Lyutakov, O.; Huttel, I.; Prajzler, V.; Jerabek, V.; Jančarek, A.; Hnatowicz, Vladimír; Švorčík, V.

    2009-01-01

    Roč. 47, č. 12 (2009), s. 1131-1135 ISSN 0887-6266 R&D Projects: GA MŠk(CZ) LC06041 Institutional research plan: CEZ:AV0Z10480505 Keywords : optics * spin coating * thin films Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.586, year: 2009

  6. 3D vector distribution of the electro-magnetic fields on a random gold film

    Canneson, Damien; Berini, Bruno; Buil, Stéphanie; Hermier, Jean-Pierre; Quélin, Xavier

    2018-05-01

    The 3D vector distribution of the electro-magnetic fields at the very close vicinity of the surface of a random gold film is studied. Such films are well known for their properties of light confinement and large fluctuations of local density of optical states. Using Finite-Difference Time-Domain simulations, we show that it is possible to determine the local orientation of the electro-magnetic fields. This allows us to obtain a complete characterization of the fields. Large fluctuations of their amplitude are observed as previously shown. Here, we demonstrate large variations of their direction depending both on the position on the random gold film, and on the distance to it. Such characterization could be useful for a better understanding of applications like the coupling of point-like dipoles to such films.

  7. Use of an electric field in an electrostatic liquid film radiator.

    Bankoff, S G; Griffing, E M; Schluter, R A

    2002-10-01

    Experimental and numerical work was performed to further the understanding of an electrostatic liquid film radiator (ELFR) that was originally proposed by Kim et al.(1) The ELFR design utilizes an electric field that exerts a normal force on the interface of a flowing film. The field lowers the pressure under the film in a space radiator and, thereby, prevents leakage through a puncture in the radiator wall. The flowing film is subject to the Taylor cone instability, whereby a cone of fluid forms underneath an electrode and sharpens until a jet of fluid is pulled toward the electrode and disintegrates into droplets. The critical potential for the instability is shown to be as much as an order of magnitude higher than that used in previous designs.(2) Furthermore, leak stoppage experiments indicate that the critical field is adequate to stop leaks in a working radiator.

  8. Effects of a magnetic field on growth of porous alumina films on aluminum

    Ispas, Adriana; Bund, Andreas [Technische Universitaet Dresden, Physikalische Chemie und Elektrochemie, 01062 Dresden (Germany); Vrublevsky, Igor, E-mail: vrublevsky@bsuir.edu.b [Belarusian State University of Informatics and Radioelectronics Minsk, Department of Micro and Nanoelectronics, 220013 Minsk (Belarus)

    2010-05-01

    The effects induced by a magnetic field on the oxide film growth on aluminum in sulfuric, oxalic, phosphoric and sulfamic acid, and on current transients during re-anodizing of porous alumina films in the barrier-type electrolyte, were studied. Aluminum films of 100 nm thickness were prepared by thermal evaporation on Si wafer substrates. We could show that the duration of the anodizing process increased by 33% during anodizing in sulfuric acid when a magnetic field was applied (0.7 T), compared to the process without a magnetic field. Interestingly, such a magnetic field effect was not found during anodizing in oxalic and sulfamic acid. The pore intervals were decreased by ca. 17% in oxalic acid. These findings were attributed to variations in electronic properties of the anodic oxide films formed in various electrolytes and interpreted on the basis of the influence of trapped electrons on the mobility of ions migrating during the film growth. The spin dependent tunneling of electrons into the surface layer of the oxide under the magnetic field could be responsible for the shifts of the current transients to lower potentials during re-anodizing of heat-treated oxalic and phosphoric acid alumina films.

  9. Relation between film thickness and surface doping of MoS2 based field effect transistors

    Lockhart de la Rosa, César J.; Arutchelvan, Goutham; Leonhardt, Alessandra; Huyghebaert, Cedric; Radu, Iuliana; Heyns, Marc; De Gendt, Stefan

    2018-05-01

    Ultra-thin MoS2 film doping through surface functionalization with physically adsorbed species is of great interest due to its ability to dope the film without reduction in the carrier mobility. However, there is a need for understanding how the thickness of the MoS2 film is related to the induced surface doping for improved electrical performance. In this work, we report on the relation of MoS2 film thickness with the doping effect induced by the n-dopant adsorbate poly(vinyl-alcohol). Field effect transistors built using MoS2 films of different thicknesses were electrically characterized, and it was observed that the ION/OFF ratio after doping in thin films is more than four orders of magnitudes greater when compared with thick films. Additionally, a semi-classical model tuned with the experimental devices was used to understand the spatial distribution of charge in the channel and explain the observed behavior. From the simulation results, it was revealed that the two-dimensional carrier density induced by the adsorbate is distributed rather uniformly along the complete channel for thin films (<5.2 nm) contrary to what happens for thicker films.

  10. Partial phase transition and quantum effects in helimagnetic films under an applied magnetic field

    El Hog, Sahbi, E-mail: sahbi.el-hog@u-cergy.fr; Diep, H.T., E-mail: diep@u-cergy.fr

    2017-05-01

    We study the phase transition in a helimagnetic film with Heisenberg spins under an applied magnetic field in the c direction perpendicular to the film. The helical structure is due to the antiferromagnetic interaction between next-nearest neighbors in the c direction. Helimagnetic films in zero field are known to have a strong modification of the in-plane helical angle near the film surfaces. We show that spins react to a moderate applied magnetic field by creating a particular spin configuration along the c axis. With increasing temperature (T), using Monte Carlo simulations we show that the system undergoes a phase transition triggered by the destruction of the ordering of a number of layers. This partial phase transition is shown to be intimately related to the ground-state spin structure. We show why some layers undergo a phase transition while others do not. The Green's function method for non collinear magnets is also carried out to investigate effects of quantum fluctuations. Non-uniform zero-point spin contractions and a crossover of layer magnetizations at low T are shown and discussed. - Highlights: • Monte Carlo simulations were carried out to study a helimagnetic film in a field. • Partial phase transition is found in some layers of the film. • Mechanism leading to the partial disordering is analyzed using the ground state symmetry. • Quantum fluctuations at surface are calculated using the Green's function.

  11. The rigorous bound on the transmission probability for massless scalar field of non-negative-angular-momentum mode emitted from a Myers-Perry black hole

    Ngampitipan, Tritos, E-mail: tritos.ngampitipan@gmail.com [Faculty of Science, Chandrakasem Rajabhat University, Ratchadaphisek Road, Chatuchak, Bangkok 10900 (Thailand); Particle Physics Research Laboratory, Department of Physics, Faculty of Science, Chulalongkorn University, Phayathai Road, Patumwan, Bangkok 10330 (Thailand); Boonserm, Petarpa, E-mail: petarpa.boonserm@gmail.com [Department of Mathematics and Computer Science, Faculty of Science, Chulalongkorn University, Phayathai Road, Patumwan, Bangkok 10330 (Thailand); Chatrabhuti, Auttakit, E-mail: dma3ac2@gmail.com [Particle Physics Research Laboratory, Department of Physics, Faculty of Science, Chulalongkorn University, Phayathai Road, Patumwan, Bangkok 10330 (Thailand); Visser, Matt, E-mail: matt.visser@msor.vuw.ac.nz [School of Mathematics, Statistics, and Operations Research, Victoria University of Wellington, PO Box 600, Wellington 6140 (New Zealand)

    2016-06-02

    Hawking radiation is the evidence for the existence of black hole. What an observer can measure through Hawking radiation is the transmission probability. In the laboratory, miniature black holes can successfully be generated. The generated black holes are, most commonly, Myers-Perry black holes. In this paper, we will derive the rigorous bounds on the transmission probabilities for massless scalar fields of non-negative-angular-momentum modes emitted from a generated Myers-Perry black hole in six, seven, and eight dimensions. The results show that for low energy, the rigorous bounds increase with the increase in the energy of emitted particles. However, for high energy, the rigorous bounds decrease with the increase in the energy of emitted particles. When the black holes spin faster, the rigorous bounds decrease. For dimension dependence, the rigorous bounds also decrease with the increase in the number of extra dimensions. Furthermore, as comparison to the approximate transmission probability, the rigorous bound is proven to be useful.

  12. The rigorous bound on the transmission probability for massless scalar field of non-negative-angular-momentum mode emitted from a Myers-Perry black hole

    Ngampitipan, Tritos; Boonserm, Petarpa; Chatrabhuti, Auttakit; Visser, Matt

    2016-01-01

    Hawking radiation is the evidence for the existence of black hole. What an observer can measure through Hawking radiation is the transmission probability. In the laboratory, miniature black holes can successfully be generated. The generated black holes are, most commonly, Myers-Perry black holes. In this paper, we will derive the rigorous bounds on the transmission probabilities for massless scalar fields of non-negative-angular-momentum modes emitted from a generated Myers-Perry black hole in six, seven, and eight dimensions. The results show that for low energy, the rigorous bounds increase with the increase in the energy of emitted particles. However, for high energy, the rigorous bounds decrease with the increase in the energy of emitted particles. When the black holes spin faster, the rigorous bounds decrease. For dimension dependence, the rigorous bounds also decrease with the increase in the number of extra dimensions. Furthermore, as comparison to the approximate transmission probability, the rigorous bound is proven to be useful.

  13. Optical fiber magnetic field sensors with TbDyFe magnetostrictive thin films as sensing materials.

    Yang, Minghong; Dai, Jixiang; Zhou, Ciming; Jiang, Desheng

    2009-11-09

    Different from usually-used bulk magnetostrictive materials, magnetostrictive TbDyFe thin films were firstly proposed as sensing materials for fiber-optic magnetic field sensing characterization. By magnetron sputtering process, TbDyFe thin films were deposited on etched side circle of a fiber Bragg Grating (FBG) as sensing element. There exists more than 45pm change of FBG wavelength when magnet field increase up to 50 mT. The response to magnetic field is reversible, and could be applicable for magnetic and current sensing.

  14. Use of plastic films for weed control during field establishment of micropropagated hardwoods

    J. W. Van Sambeek; John E. Preece; Carl A. Huetteman; Paul L. Roth

    1995-01-01

    This study compares the use of plastic films to conventional methods for establishing hardwoods on a recently cultivated old field site using 1-year-old micropropagated plantlets of white ash (Fraxinus americana L.) and silver maple (Acer saccharinum L.). After one growing season in the field, height of plantlets with all weed...

  15. Electrical Field Effect Dependence of Hall Constant in Bi-films

    Butenko, A. V.; Sandomirsky, V.; Schlesinger, Y.; Shvarts, Dm.

    1998-01-01

    The Electrical Field Effect (EFE) was investigated on the capacitive structure Aumica (ns 10 μm ) - Bi films (L ∼ 350≥≥500 angstrem) in the temperature region 15 - 100 K. The thicknesses of Bi films lay in the region of the Quantum Size Effect (QSE). The transverse electric fields reach the value of 106 V/cm. The corresponding surface carrier concentrations are ns ∼ 10 13 [e]/cm 2 , i.e. the average change of carrier concentration in the 500 angstrem film is n s /L ∼ 10 17 cm -3 . The latter value is comparable with the original carrier concentration in Bi film, 3 f 1017 cm-3. However, EEE, the film resistance change Δ R is 0.5 %. On the other hand EFE change of Hall constant (2ΔR H ), that was observed for the first time in this work, is 5 - 30 % (depending on the film thickness). These results point to a small carrier mobility and to an essential change of carrier concentration in the EEE influence region (of the order of the screening length). The interpretation takes into account both classical and quantum versions of Bi film behavior under EFE conditions. A procedure to determine the surface charge carrier mobilities and concentrations from EFE-data (both ΔR and ORE) is propose

  16. Characterization of 12CaO x 7Al2O3 doped indium tin oxide films for transparent cathode in top-emission organic light-emitting diodes.

    Jung, Chul Ho; Hwang, In Rok; Park, Bae Ho; Yoon, Dae Ho

    2013-11-01

    12CaO x 7Al2O3, insulator (C12A7) doped indium tin oxide (ITO) (ITO:C12A7) films were fabricated using a radio frequency magnetron co-sputtering system with ITO and C12A7 targets. The qualitative and quantitative properties of ITO:C12A7 films, as a function of C12A7 concentration, were examined via X-ray photoemission spectroscopy and synchrotron X-ray scattering as well as by conducting atomic force microscopy. The work function of ITO:C12A7 (1.3%) films of approximately 2.8 eV obtained by high resolution photoemission spectroscopy measurements make them a reasonable cathode for top-emission organic light-emitting diodes.

  17. Influence of heat treatment on field emission characteristics of boron nitride thin films

    Li Weiqing; Gu Guangrui; Li Yingai; He Zhi; Feng Wei; Liu Lihua; Zhao Chunhong; Zhao Yongnian

    2005-01-01

    Boron nitride (BN) nanometer thin films are synthesized on Si (1 0 0) substrates by RF reactive magnetron sputtering. Then the film surfaces are treated in the case of the base pressure below 5 x 10 -4 Pa and the temperature of 800 and 1000 deg. C, respectively. And the films are studied by Fourier transform infrared spectra (FTIR), atomic force microscopic (AFM) and field emission characteristics at different annealing temperature. The results show that the surface heat treatment makes no apparent influence on the surface morphology of the BN films. The transformations of the sample emission characteristics have to do with the surface negative electron affinity (NEA) of the films possibly. The threshold electric fields are lower for BN samples without heat-treating than the treated films, which possibly ascribed to the surface negative electron affinity effect. A threshold field of 8 V/μm and the emission current of 80 μA are obtained. The surface NEA is still presence at the heat treatment temperature of 800 deg. C and disappeared at temperature of 1000 deg. C

  18. Fast static field CIPT mapping of unpatterned MRAM film stacks

    Kjær, Daniel; Hansen, Ole; Henrichsen, Henrik Hartmann

    2015-01-01

    Current In-Plane Tunneling (CIPT) method measures both RA and TMR, but the usefulness for uniformity mapping, e.g. for tool optimization, is limited by excessive measurement time. Thus, we develop and demonstrate a fast complementary static magnetic field method focused only on measurement of RA. We...... compare the static field method to the standard CIPT method and find perfect agreement between the extracted RA values and measurement repeatability while the static field method is several times faster. The static field CIPT method is demonstrated for 200 mm wafer mapping showing radial as well...

  19. Droplet manipulation by an external electric field for crystalline film growth.

    Komino, Takeshi; Kuwabara, Hirokazu; Ikeda, Masaaki; Yahiro, Masayuki; Takimiya, Kazuo; Adachi, Chihaya

    2013-07-30

    Combining droplet manipulation by the application of an electric field with inkjet printing is proposed as a unique technique to control the surface wettability of substrates for solution-processed organic field-effect transistors (FETs). With the use of this technique, uniform thin films of 2,7-dioctyl[1]benzothieno[2,3,-b][1]benzothiopene (C8-BTBT) could be fabricated on the channels of FET substrates without self-assembled monolayer treatment. High-speed camera observation revealed that the crystals formed at the solid/liquid interface. The coverage of the crystals on the channels depended on the ac frequency of the external electric field applied during film formation, leading to a wide variation in the carrier transport of the films. The highest hole mobility of 0.03 cm(2) V(-1) s(-1) was obtained when the coverage was maximized with an ac frequency of 1 kHz.

  20. Thermal pulse measurements of space charge distributions under an applied electric field in thin films

    Zheng, Feihu; An, Zhenlian; Zhang, Yewen; Liu, Chuandong; Lin, Chen; Lei, Qingquan

    2013-01-01

    The thermal pulse method is a powerful method to measure space charge and polarization distributions in thin dielectric films, but a complicated calibration procedure is necessary to obtain the real distribution. In addition, charge dynamic behaviour under an applied electric field cannot be observed by the classical thermal pulse method. In this work, an improved thermal pulse measuring system with a supplemental circuit for applying high voltage is proposed to realize the mapping of charge distribution in thin dielectric films under an applied field. The influence of the modified measuring system on the amplitude and phase of the thermal pulse response current are evaluated. Based on the new measuring system, an easy calibration approach is presented with some practical examples. The newly developed system can observe space charge evolution under an applied field, which would be very helpful in understanding space charge behaviour in thin films. (paper)

  1. Surface Treatment of Polypropylene Films Using Dielectric Barrier Discharge with Magnetic Field

    Wang Changquan; Zhang Guixin; Wang Xinxin; Chen Zhiyu

    2012-01-01

    Atmospheric pressure non-thermal plasma is of interest for industrial applications. In this study, polypropylene (PP) films are modified by a dielectric barrier discharge (DBD) with a non-uniform magnetic field in air at atmospheric pressure. The surface properties of the PP films before and after a DBD treatment are studied by using contact angle measurement, atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The effect of treatment time on the surface modification with and without a magnetic field is investigated. It is found that the hydrophilic improvement depends on the treatment time and magnetic field. It is also found that surface roughness and oxygen-containing groups are introduced onto the PP film surface after the DBD treatment. Surface roughness and oxygen-containing polar functional groups of the PP films increase with the magnetic induction density. The functional groups are identified as C-O, C=O and O-C=O by using XPS analysis. It is concluded that the hydrophilic improvement of PP films treated with a magnetic field is due to a greater surface roughness and more oxygen-containing groups. (plasma technology)

  2. Magnetic-field induced semimetal in topological crystalline insulator thin films

    Ezawa, Motohiko

    2015-01-01

    We investigate electromagnetic properties of a topological crystalline insulator (TCI) thin film under external electromagnetic fields. The TCI thin film is a topological insulator indexed by the mirror-Chern number. It is demonstrated that the gap closes together with the emergence of a pair of gapless cones carrying opposite chirarities by applying in-plane magnetic field. A pair of gapless points have opposite vortex numbers. This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. We thus present an a magnetic-field induced semimetal–semiconductor transition in 2D material. This is a giant-magnetoresistance, where resistivity is controlled by magnetic field. Perpendicular electric field is found to shift the gapless points and also renormalize the Fermi velocity in the direction of the in-plane magnetic field. - Highlights: • The band structure of topological crystalline insulator thin films can be controlled by applying in-plane magnetic field. • At the gap closing magnetic field, a pair of gapless cones carrying opposite chirarities emerge. • A pair of gapless points have opposite vortex numbers. • This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. • A magnetic-field induced semimetal–semiconductor transition occurs in 2D material

  3. Magnetic-field induced semimetal in topological crystalline insulator thin films

    Ezawa, Motohiko, E-mail: ezawa@ap.t.u-tokyo.ac.jp

    2015-06-19

    We investigate electromagnetic properties of a topological crystalline insulator (TCI) thin film under external electromagnetic fields. The TCI thin film is a topological insulator indexed by the mirror-Chern number. It is demonstrated that the gap closes together with the emergence of a pair of gapless cones carrying opposite chirarities by applying in-plane magnetic field. A pair of gapless points have opposite vortex numbers. This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. We thus present an a magnetic-field induced semimetal–semiconductor transition in 2D material. This is a giant-magnetoresistance, where resistivity is controlled by magnetic field. Perpendicular electric field is found to shift the gapless points and also renormalize the Fermi velocity in the direction of the in-plane magnetic field. - Highlights: • The band structure of topological crystalline insulator thin films can be controlled by applying in-plane magnetic field. • At the gap closing magnetic field, a pair of gapless cones carrying opposite chirarities emerge. • A pair of gapless points have opposite vortex numbers. • This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. • A magnetic-field induced semimetal–semiconductor transition occurs in 2D material.

  4. A sensitive magnetic field sensor using BPSCCO thick film

    Unknown

    Figure 4. a. Hysteretic characteristics of the sensor #1 at liquid nitrogen temperature for magnetic field between – 40 and. + 40 mT and b. hysteretic characteristics of the sensor #1 at liquid nitrogen temperature for magnetic field between – 12 and. + 12 mT. 1. 2. 3. 4. 5. 6. 7. 0. 30. 60. 90. 120. R. 77. (ohm). 1st cycle. 2nd cycle.

  5. Effect of Substrate Morphology on Growth and Field Emission Properties of Carbon Nanotube Films

    Kumar Vikram

    2008-01-01

    Full Text Available AbstractCarbon nanotube (CNT films were grown by microwave plasma-enhanced chemical vapor deposition process on four types of Si substrates: (i mirror polished, (ii catalyst patterned, (iii mechanically polished having pits of varying size and shape, and (iv electrochemically etched. Iron thin film was used as catalytic material and acetylene and ammonia as the precursors. Morphological and structural characteristics of the films were investigated by scanning and transmission electron microscopes, respectively. CNT films of different morphology such as vertically aligned, randomly oriented flowers, or honey-comb like, depending on the morphology of the Si substrates, were obtained. CNTs had sharp tip and bamboo-like internal structure irrespective of growth morphology of the films. Comparative field emission measurements showed that patterned CNT films and that with randomly oriented morphology had superior emission characteristics with threshold field as low as ~2.0 V/μm. The defective (bamboo-structure structures of CNTs have been suggested for the enhanced emission performance of randomly oriented nanotube samples.

  6. Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

    Zhou, Dayu; Guan, Yan; Vopson, Melvin M.; Xu, Jin; Liang, Hailong; Cao, Fei; Dong, Xianlin; Mueller, Johannes; Schenk, Tony; Schroeder, Uwe

    2015-01-01

    HfO 2 -based binary lead-free ferroelectrics show promising properties for non-volatile memory applications, providing that their polarization reversal behavior is fully understood. In this work, temperature-dependent polarization hysteresis measured over a wide applied field range has been investigated for Si-doped HfO 2 ferroelectric thin films. Our study indicates that in the low and medium electric field regimes (E < twofold coercive field, 2E c ), the reversal process is dominated by the thermal activation on domain wall motion and domain nucleation; while in the high-field regime (E > 2E c ), a non-equilibrium nucleation-limited-switching mechanism dominates the reversal process. The optimum field for ferroelectric random access memory (FeRAM) applications was determined to be around 2.0 MV/cm, which translates into a 2.0 V potential applied across the 10 nm thick films

  7. Dependence on film thickness of grain boundary low-field magnetoresistance in thin films of La0.7Ca0.3MnO3

    Todd, N. K.; Mathur, N. D.; Blamire, M. G.

    2001-01-01

    The magnetoresistance of grain boundaries in the perovskite manganites is being studied, both in polycrystalline materials, and thin films grown on bicrystal substrates, because of interest in low-field applications. In this article we show that epitaxial films grown on SrTiO 3 bicrystal substrates of 45 degree misorientation show magnetoresistance behavior which is strongly dependent on the thickness of the film. Thin films, e.g., 40 nm, can show a large low-field magnetoresistance at low temperatures, with very sharp switching between distinct high and low resistance states for fields applied in plane and parallel to the boundary. Thicker films show a more complex behavior of resistance as a function of field, and the dependence on the angle between the applied field and the grain boundary is altered. These changes in magnetoresistance behavior are linked to the variation in morphology of the films. Thin films are coherently strained, due to the mismatch with the substrate, and very smooth. Thicker films relax, with the formation of defects, and hence different micromagnetic behavior. [copyright] 2001 American Institute of Physics

  8. Field emission mechanism from a single-layer ultra-thin semiconductor film cathode

    Duan Zhiqiang; Wang Ruzhi; Yuan Ruiyang; Yang Wei; Wang Bo; Yan Hui

    2007-01-01

    Field emission (FE) from a single-layer ultra-thin semiconductor film cathode (SUSC) on a metal substrate has been investigated theoretically. The self-consistent quantum FE model is developed by synthetically considering the energy band bending and electron scattering. As a typical example, we calculate the FE properties of ultra-thin AlN film with an adjustable film thickness from 1 to 10 nm. The calculated results show that the FE characteristic is evidently modulated by varying the film thickness, and there is an optimum thickness of about 3 nm. Furthermore, a four-step FE mechanism is suggested such that the distinct FE current of a SUSC is rooted in the thickness sensitivity of its quantum structure, and the optimum FE properties of the SUSC should be attributed to the change in the effective potential combined with the attenuation of electron scattering

  9. Electrical and optical properties of poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) and AuCl3-doped reduced graphene oxide/single-walled carbon nanotube films for ultraviolet light-emitting diodes.

    Lee, Byeong Ryong; Lee, Jae Hoon; Kim, Kyeong Heon; Kim, Hee-Dong; Kim, Tae Geun

    2014-12-01

    We report the effects of poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) ( PSS) and gold chloride (AuCl) co-doping on the electrical and optical properties of reduced graphene oxide (RGO)/single-walled carbon nanotube (SWNT) films fabricated by dipcoating methods. The RGO/SWNT films were doped with both AuCl3 dissolved in nitromethane and PSS hole injection layers by spin coating to improve their electrical properties by increasing the work function of the RGO/SWNT films, thereby reducing the Schottky barrier height between the RGO/SWNT and p-GaN films. As a result, we obtained a reduced sheet resistance of 851.9 Ω/Ω and a contact resistance of 1.97 x 10(-1) Ω x cm2, together with a high transmittance of 84.1% at 380 nm. The contact resistance of these films should be further reduced to fully utilize the feature of the electrode scheme proposed in this work, but the current result suggests its potential use as a transparent conductive electrode for ultraviolet light-emitting diodes.

  10. Temperature dependence of structural and luminescence properties of Eu{sup 3+}-doped Y{sub 2}O{sub 3} red-emitting phosphor thin films by pulsed laser deposition

    Ali, A.G.; Dejene, B.F. [University of the Free State (Qwaqwa Campus), Department of Physics, Phuthaditjhaba (South Africa); Swart, H.C. [University of the Free State, Department of Physics, Bloemfontein (South Africa)

    2016-04-15

    Pulse laser deposition was used to obtain nanocrystalline red-emitting Y{sub 2}O{sub 3}:Eu{sup 3+} thin-film phosphors. X-ray diffraction measurements show that the un-annealed thin film was amorphous, while those annealed were crystalline. At lower annealing temperature of 600-700 C, cubic bixbyite Y{sub 2}O{sub 3}:Eu{sup 3+} was formed. As the annealing temperatures were increased to 800 C, hexagonal phase emerged. The average crystallite size of the film was 64 nm. Photoluminescence measurement indicates intense red emission around 612 nm due to the {sup 5}D{sub 0} → {sup 7}F{sub 2} transition. Scanning electron microscopy indicated that agglomerates of non-crystalline particles with spherical shapes were present for the un-annealed films. After annealing at high temperature, finer morphology was revealed. Atomic force microscopy further confirmed the formation of new morphology at the higher annealing temperatures. UV-Vis measurement indicated a band gap in the range of 4.6-4.8 eV. It was concluded that the annealing temperature played an important role in the luminescence intensity and crystallinity of these films. (orig.)

  11. Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors

    Kagan; Mitzi; Dimitrakopoulos

    1999-10-29

    Organic-inorganic hybrid materials promise both the superior carrier mobility of inorganic semiconductors and the processability of organic materials. A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated. Hybrids based on the perovskite structure crystallize from solution to form oriented molecular-scale composites of alternating organic and inorganic sheets. Spin-coated thin films of the semiconducting perovskite (C(6)H(5)C(2)H(4)NH(3))(2)SnI(4) form the conducting channel, with field-effect mobilities of 0.6 square centimeters per volt-second and current modulation greater than 10(4). Molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin-film transistors.

  12. Increased field-emission site density from regrown carbon nanotube films

    Wang, Y.Y.; Gupta, S.; Liang, M.; Nemanich, R.J.

    2005-01-01

    Electron field-emission properties of as-grown, etched, and regrown carbon nanotube thin films were investigated. The aligned carbon nanotube films were deposited by the microwave plasma-assisted chemical vapor deposition technique. The surface of the as-grown film contained a carbon nanotube mat of amorphous carbon and entangled nanotubes with some tubes protruding from the surface. Hydrogen plasma etching resulted in the removal of the surface layer, and regrowth on the etched surface displayed the formation of a new carbon nanotube mat. The emission site density and the current-voltage dependence of the field emission from all of the samples were analyzed. The results showed that the as-grown sample had a few strong emission spots and a relatively high emission current density (∼20 μA/cm 2 at 1 V/μm), while the regrown sample exhibited a significantly increased emission site density

  13. Pulsed laser deposition of semiconductor-ITO composite films on electric-field-applied substrates

    Narazaki, Aiko; Sato, Tadatake; Kawaguchi, Yoshizo; Niino, Hiroyuki; Yabe, Akira; Sasaki, Takeshi; Koshizaki, Naoto

    2002-01-01

    The DC electric-field effect on the crystallinity of II-VI semiconductor in composite systems has been investigated for CdS-ITO films fabricated via alternative pulsed laser deposition (PLD) of CdS and indium tin oxide (ITO) on electric-field-applied substrates. The alternative laser ablation was performed under irradiation of ArF excimer laser in mixture gas of helium and oxygen. The application of electric-field facilitated the preferential crystal-growth of CdS in nanometer scale at low pressure, whereas all the films grown without the field were amorphous. There is a large difference in the crystallization between the films grown on field-applied and heated substrates; the latter showed the crystal-growth with random orientations. This difference indicates that the existence of electric-field has an influence on the transformation from amorphous to crystalline phase of CdS. The driving force for the field-induced crystallization is also discussed in the light of the Joule heat

  14. The Field Emission Properties of Graphene Aggregates Films Deposited on Fe-Cr-Ni alloy Substrates

    Zhanling Lu

    2010-01-01

    Full Text Available The graphene aggregates films were fabricated directly on Fe-Cr-Ni alloy substrates by microwave plasma chemical vapor deposition system (MPCVD. The source gas was a mixture of H2 and CH4 with flow rates of 100 sccm and 12 sccm, respectively. The micro- and nanostructures of the samples were characterized by Raman scattering spectroscopy, field emission scanning electron microscopy (SEM, and transparent electron microscopy (TEM. The field emission properties of the films were measured using a diode structure in a vacuum chamber. The turn-on field was about 1.0 V/m. The current density of 2.1 mA/cm2 at electric field of 2.4 V/m was obtained.

  15. A model of film boiling in the presence of electric fields

    Carrica, P.M.; Masson, V.; Clausse, A. [Centro Atomico Bariloche and Instituto Balseiro, Barilochi (Argentina)

    1995-09-01

    Recently it was found that, when a strong electric field is applied around a heated wire, two distinct film boiling heat transfer regimes are observed. In this paper, a semi-empirical model is derived to analyze the pool boiling process in the presence of non uniform electric field. The model takes into account the dielectrophoretic force acting on the bubbles as they grow and the effect of the electric field on the most dangerous wavelength. It is shown how the transition between the two film boiling regimes is possible for high strength electric fields. The threshold voltage for transition, transition heat fluxes and hysteresis values are compared with experimental outcomes showing a satisfactory agreement.

  16. Use of cermet thin film resistors with nitride passivated metal insulator field effect transistor

    Brown, G. A.; Harrap, V.

    1971-01-01

    Film deposition of cermet resistors on same chip with metal nitride oxide silicon field effect transistors permits protection of contamination sensitive active devices from contaminants produced in cermet deposition and definition processes. Additional advantages include lower cost, greater reliability, and space savings.

  17. Final report: High current capacity high temperature superconducting film based tape for high field magnets

    Ying Xin

    2000-01-01

    The primary goal of the program was to establish the process parameters for the continuous deposition of high quality, superconducting YBCO films on one meter lengths of buffered RABiTS tape using MOCVD and to characterize the potential utility of the resulting tapes in high field magnet applications

  18. Electric-field induced spin accumulation in the Landau level states of topological insulator thin films

    Siu, Zhuo Bin; Chowdhury, Debashree; Basu, Banasri; Jalil, Mansoor B. A.

    2017-08-01

    A topological insulator (TI) thin film differs from the more typically studied thick TI system in that the former has both a top and a bottom surface where the states localized at both surfaces can couple to one other across the finite thickness. An out-of-plane magnetic field leads to the formation of discrete Landau level states in the system, whereas an in-plane magnetization breaks the angular momentum symmetry of the system. In this work, we study the spin accumulation induced by the application of an in-plane electric field to the TI thin film system where the Landau level states and inter-surface coupling are simultaneously present. We show, via Kubo formula calculations, that the in-plane spin accumulation perpendicular to the magnetization due to the electric field vanishes for a TI thin film with symmetric top and bottom surfaces. A finite in-plane spin accumulation perpendicular to both the electric field and magnetization emerges upon applying either a differential magnetization coupling or a potential difference between the two film surfaces. This spin accumulation results from the breaking of the antisymmetry of the spin accumulation around the k-space equal-energy contours.

  19. Conductive plastic film electrodes for Pulsed Electric Field (PEF) treatment : A proof of principle

    Roodenburg, B.; Haan, S.W.H. de; Boxtel, L.B.J. van; Hatt, V.; Wouters, P.C.; Coronel, P.; Ferreira, J.A.

    2010-01-01

    Nowadays Pulsed Electric Field (PEF) treatment of food needs to be performed prior to packaging, either hygienic or aseptic packaging is necessary. New techniques for PEF treatment after packaging can be considered when plastic conductive (film) electrodes can be integrated within the package, so

  20. Electric field dependence of excess electrical conductivity below transition temperature in thin superconducting lead films

    Ashwini Kumar, P K; Duggal, V P [Delhi Univ. (India). Dept. of Physics and Astrophysics

    1976-01-26

    Results of measurements of the electric field dependence of the excess electrical conductivity are reported in thin superconducting lead films below the transition temperature. It is observed that the normal state sheet resistance has some effect on the nonlinearity but the theory of Yamaji still fits well to the experimental data.

  1. Enhancement on field emission characteristics of pulsed laser deposited diamondlike carbon films using Au precoatings

    Chuang, F.Y.; Sun, C.Y.; Cheng, H.F.; Lin, I.N.

    1997-01-01

    Using Au precoatings has been observed to significantly enhance the field emission properties of diamondlike carbon (DLC) films deposited on Si substrates. The electron emission can be turned on at a low field as 7 V/μm and a large emission current density as 2000 μA/cm 2 can be obtained at 20 V/μm applied field. However, preannealing the Au-coated Si substrates at 500 degree C for 30 min is necessary to achieve such a performance. Microscopic examination on surface and cross-sectional morphologies of the DLC/Au/Si films using atomic force microscopy and scanning electron microscopy, respectively, in conjunction with the elemental depth profile examination of these films using secondary ion mass spectroscopy, indicated that substantial interdiffusion between DLC, Au, and Si layers has occurred. Such kind of reaction is proposed to lower the resistance for electrons to transport across the interfaces and, thereafter, enhances the field emission properties of the DLC/Au/Si films. copyright 1997 American Institute of Physics

  2. Lens of controllable optical field with thin film metallic glasses for UV-LEDs.

    Pan, C T; Chen, Y C; Lin, Po-Hung; Hsieh, C C; Hsu, F T; Lin, Po-Hsun; Chang, C M; Hsu, J H; Huang, J C

    2014-06-16

    In the exposure process of photolithography, a free-form lens is designed and fabricated for UV-LED (Ultraviolet Light-Emitting Diode). Thin film metallic glasses (TFMG) are adopted as UV reflection layers to enhance the irradiance and uniformity. The Polydimethylsiloxane (PDMS) with high transmittance is used as the lens material. The 3-D fast printing is attempted to make the mold of the lens. The results show that the average irradiance can be enhanced by 6.5~6.7%, and high uniformity of 85~86% can be obtained. Exposure on commercial thick photoresist using this UV-LED system shows 3~5% dimensional deviation, lower than the 6~8% deviation for commercial mercury lamp system. This current system shows promising potential to replace the conventional mercury exposure systems.

  3. Nanoengineering of organic light-emitting diodes

    Lupton, J.M.

    2000-11-01

    This thesis reports nanoengineerging of the emission and transport properties of organic light-emitting diodes (LEDs). This is achieved by a control of the electronic material properties and the photonic device properties. A novel class of conjugated materials for electroluminescence (EL) applications is presented, based on successively branching, or dendritic, materials comprising an emissive core and a shielding dendritic architecture. Exciton localisation at the centre of these dendrimers is observed in both luminescence and absorption. A detailed quantum chemical investigation using an exciton model supports these findings and accurately describes the energies and oscillator strengths of transitions in the core and branches. The dendrimer generation describes the degree of branching and gives a direct measure of the separation and interaction between chromophores. Increasing generation is found to lead to a reduction in red tail emission. This correlates with an increase in operating field and LED efficiency. Dendrimer blends with triplet harvesting dendritic phosphors are also investigated and found to exhibit unique emission properties. A numerical device model is presented, which is used to describe the temperature dependence of single layer polymer LEDs by fitting the field-dependent mobility and the barrier to hole injection. The device model is also used to obtain mobility values for the dendrimer materials, which are in excellent agreement with results obtained from time-of-flight measurements. The dendrimer generation is shown to provide a direct control of hopping mobility, which decreases by two orders of magnitude as the dendrimer generation increases from 0 to 3. The photonic properties and spontaneous emission of an LED are modified by incorporating a periodic wavelength scale microstructure into the emitting film. This is found to double the amount of light emitted with no effect on the device current. An investigation of the angular dependence

  4. Time-resolved ultraviolet near-field scanning optical microscope for characterizing photoluminescence lifetime of light-emitting devices.

    Park, Kyoung-Duck; Jeong, Hyun; Kim, Yong Hwan; Yim, Sang-Youp; Lee, Hong Seok; Suh, Eun-Kyung; Jeong, Mun Seok

    2013-03-01

    We developed a instrument consisting of an ultraviolet (UV) near-field scanning optical microscope (NSOM) combined with time-correlated single photon counting, which allows efficient observation of temporal dynamics of near-field photoluminescence (PL) down to the sub-wavelength scale. The developed time-resolved UV NSOM system showed a spatial resolution of 110 nm and a temporal resolution of 130 ps in the optical signal. The proposed microscope system was successfully demonstrated by characterizing the near-field PL lifetime of InGaN/GaN multiple quantum wells.

  5. Portable, universal, and visual ion sensing platform based on the light emitting diode-based self-referencing-ion selective field-effect transistor.

    Zhang, Xiaowei; Han, Yanchao; Li, Jing; Zhang, Libing; Jia, Xiaofang; Wang, Erkang

    2014-02-04

    In this work, a novel and universal ion sensing platform was presented, which enables the visual detection of various ions with high sensitivity and selectivity. Coaxial potential signals (millivolt-scale) of the sample from the self-referencing (SR) ion selective chip can be transferred into the ad620-based amplifier with an output of volt-scale potentials. The amplified voltage is high enough to drive a light emitting diode (LED), which can be used as an amplifier and indicator to report the sample information. With this double amplification device (light emitting diode-based self-referencing-ion selective field-effect transistor, LED-SR-ISFET), a tiny change of the sample concentration can be observed with a distinguishable variation of LED brightness by visual inspection. This LED-based luminescent platform provided a facile, low-cost, and rapid sensing strategy without the need of additional expensive chemiluminescence reagent and instruments. Moreover, the SR mode also endows this device excellent stability and reliability. With this innovative design, sensitive determination of K(+), H(+), and Cl(-) by the naked eye was achieved. It should also be noticed that this sensing strategy can easily be extended to other ions (or molecules) by simply integrating the corresponding ion (or molecule) selective electrode.

  6. Harvesting Triplet Excitons with Exciplex Thermally Activated Delayed Fluorescence Emitters toward High Performance Heterostructured Organic Light-Emitting Field Effect Transistors.

    Song, Li; Hu, Yongsheng; Liu, Zheqin; Lv, Ying; Guo, Xiaoyang; Liu, Xingyuan

    2017-01-25

    The utilization of triplet excitons plays a key role in obtaining high emission efficiency for organic electroluminescent devices. However, to date, only phosphorescent materials have been implemented to harvest the triplet excitons in the organic light-emitting field effect transistors (OLEFETs). In this work, we report the first incorporation of exciplex thermally activated delayed fluorescence (TADF) emitters in heterostructured OLEFETs to harvest the triplet excitons. By developing a new kind of exciplex TADF emitter constituted by m-MTDATA (4,4',4″-tris(N-3-methylphenyl-N-phenylamino)triphenylamine) as the donor and OXD-7 (1,3-bis[2-(4-tert-butylphenyl)-1,3,4-oxadiazo-5-yl]benzene) as the acceptor, an exciton utilization efficiency of 74.3% for the devices was achieved. It is found that the injection barrier between hole transport layer and emission layer as well as the ratio between donor and acceptor would influence the external quantum efficiency (EQE) significantly. Devices with a maximum EQE of 3.76% which is far exceeding the reported results for devices with conventional fluorescent emitters were successfully demonstrated. Moreover, the EQE at high brightness even outperformed the result for organic light-emitting diode based on the same emitter. Our results demonstrate that the exciplex TADF emitters can be promising candidates to develop OLEFETs with high performance.

  7. Engineering stress in thin films for the field of bistable MEMS

    Ratnayake, Dilan; Gowrishetty, Usha R; McNamara, Shamus P; Walsh, Kevin M; Martin, Michael D; Porter, Daniel A; Berfield, Thomas A

    2015-01-01

    While stress-free and tensile films are well-suited for released in-plane MEMS designs, compressive films are needed for released out-of-plane MEMS structures such as buckled beams and diaphragms. This study presents a characterization of stress on a variety of sputtered and plasma-enhanced chemical vapour deposition (PECVD)-deposited films, including titanium tungsten, invar, silicon nitride and amorphous silicon, appropriate for the field of bistable MEMS. Techniques and strategies are presented (including varying substrate bias, pressure, temperature, and frequency multiplexing) for tuning internal stress across the spectrum from highly compressive (−2300 MPa) to highly tensile (1500 MPa). Conditions for obtaining stress-free films are also presented in this work. Under certain conditions during the PECVD deposition of amorphous silicon, interesting ‘micro-bubbles’ formed within the deposited films. Strategies to mitigate their formation are presented, resulting in a dramatic improvement in surface roughness quality from 667 nm root mean square (RMS) to 16 nm RMS. All final deposited films successfully passed the traditional ‘tape test’ for adhesion. (paper)

  8. Enhanced field emission from Si doped nanocrystalline AlN thin films

    Thapa, R.; Saha, B.; Chattopadhyay, K.K.

    2009-01-01

    Si doped and undoped nanocrystalline aluminum nitride thin films were deposited on various substrates by direct current sputtering technique. X-ray diffraction analysis confirmed the formation of phase pure hexagonal aluminum nitride with a single peak corresponding to (1 0 0) reflection of AlN with lattice constants, a = 0.3114 nm and c = 0.4986 nm. Energy dispersive analysis of X-rays confirmed the presence of Si in the doped AlN films. Atomic force microscopic studies showed that the average particle size of the film prepared at substrate temperature 200 deg. C was 9.5 nm, but when 5 at.% Si was incorporated the average particle size increased to ∼21 nm. Field emission study indicated that, with increasing Si doping concentration, the emission characteristics have been improved. The turn-on field (E to ) was 15.0 (±0.7) V/μm, 8.0 (±0.4) V/μm and 7.8 (±0.5) V/μm for undoped, 3 at.% and 5 at.% Si doped AlN films respectively and the maximum current density of 0.27 μA/cm 2 has been observed for 5 at.% Si doped nanocrystalline AlN film. It was also found that the dielectric properties were highly dependent on Si doping.

  9. Electric Field Structures in Thin Films: Formation and Properties

    Cassidy, Andrew; Plekan, Oksana; Balog, Richard

    2014-01-01

    A newly discovered class of molecular materials, so-called “spontelectrics”, display spontaneous electric fields. Here we show that the novel properties of spontelectrics can be used to create composite spontelectrics, illustrating how electric fields in solid films may be structured on the nanoscale...... by combining layers of different spontelectric materials. This is demonstrated using the spontelectric materials nitrous oxide, toluene, isoprene, isopentane, and CF2Cl2. These yield a variety of tailored electric field structures, with individual layers harboring fields between 107 and 108 V/m. Fields may...

  10. Magnetic structures in ultra-thin Holmium films: Influence of external magnetic field

    Rodrigues, L.J. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, Natal 59600-900, RN (Brazil); Departamento de Física, Universidade do Estado do Rio Grande do Norte, Mossoró 59625-620, RN (Brazil); Mello, V.D. [Departamento de Física, Universidade do Estado do Rio Grande do Norte, Mossoró 59625-620, RN (Brazil); Anselmo, D.H.A.L. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, Natal 59600-900, RN (Brazil); Vasconcelos, M.S., E-mail: mvasconcelos@ect.ufrn.br [Escola de Ciência e Tecnologia, Universidade Federal do Rio Grande do Norte, 59072-970 Natal, RN (Brazil)

    2015-03-01

    We address the magnetic phases in very thin Ho films at the temperature interval between 20 K and 132 K. We show that slab size, surface effects and magnetic field due to spin ordering impact significantly the magnetic phase diagram. Also we report that there is a relevant reduction of the external field strength required to saturate the magnetization and for ultra-thin films the helical state does not form. We explore the specific heat and the susceptibility as auxiliary tools to discuss the nature of the phase transitions, when in the presence of an external magnetic field and temperature effects. The presence of an external field gives rise to the magnetic phase Fan and the spin-slip structures. - Highlights: • We analyze the magnetic phases of very thin Ho films in the temperature interval 20–132 K. • We show that slab size, etc. due to spin ordering may impact the magnetic phase diagram. • All magnetic phase transitions, for strong magnetic fields, are marked by the specific heat. • The presence of an external field gives rise to the magnetic phase Fan and the spin-slip one.

  11. Field-impressed anisotropy of susceptibility in iron-terbium thin films

    Stephenson, A.; Booth, N.A.

    1995-01-01

    Two thin films of Fe 1-x Tb x where x=0.17 and 0.23 are shown to exhibit the effect of field-impressed anisotropy. After application of a direct field of 80 mT, which gives them an isothermal remanent magnetization (IRM) in their plane, the anisotropy of initial susceptibility differs from that measured after the films have been tumble-demagnetized. By subtracting the susceptibility results of the tumble-demagnetized state from those obtained after the application of the 80 mT direct field, it is shown that the effect of this field is to decrease the susceptibility measured along the former applied field direction and to increase the susceptibility at right angles to this. The effect is almost certainly due to changes in domain alignment. Even though these films contain many domains, the above results are similar to those previously obtained for single-domain γFe 2 O 3 and magnetite particles. The sense of the effect is opposite to that for multi-domain magnetite particles where the susceptibility has been found to increase along the previously applied field direction. ((orig.))

  12. Effects of small magnetic fields on the critical current of thin films

    Passos, Wagner de Assis Cangussu; Lisboa-Filho, Paulo Noronha; Ortiz, Wilson Aires; Kang, W.N.; Choi, Eun-Mi; Hyeong-Jin, Kim; Lee, Sung-Ik Lee

    2002-01-01

    Full text: Magnetic fields applied perpendicularly to superconducting thin films may produce dendritic patterns, where penetrated and Meissner regions coexist, as observed in Nb, YBaCuO and MgB 2 [1]. A temperature-dependent limiting-field, Hd(T), separates the dendritic mode from a critical-state-like penetration regime. Due to large demagnetizing factors in the perpendicular geometry, small fields may be enough to drive portions of the sample into the mixed state. Lack of symmetry and local defects might then permeate the dendritic mode. Hd(T) is related[2] to the bulk lower critical field, Hc1, which depends on the in-plane current density, J. Not surprisingly, Hd is depressed by J[3]. The dendritic mode can be detected by the AC-susceptibility: penetrated fingers act as intergranular material, and the imaginary component peaks at Tc-inter(J). Films of 0.2-0.4 microns, with millimeter lateral sizes, develop dendrites when submitted to Earth's field[2], what limits the critical current, J c . This contribution studies how J c is affected by field-induced granularity in thin films. 1. C. A. Duran et al., PRB 52 (1995) 75; P. Leiderer et al., PRL. 71 (1993) 2646; T.H. Johansen et al., Supercond. Sci. Technol. 14 (2001) 1. 2. W. A. Ortiz et al., Physica C 361 (2001) 267. 3. A. V. Bobyl et al., cond-mat/0201260, submitted to APL

  13. Surface free energy of CrN x films deposited using closed field unbalanced magnetron sputtering

    Sun, C.-C.; Lee, S.-C.; Dai, S.-B.; Fu, Y.-S.; Wang, Y.-C.; Lee, Y.-H.

    2006-01-01

    CrN x thin films have attracted much attention for semiconductor IC packaging molding dies and forming tools due to their excellent hardness, thermal stability and non-sticking properties (low surface free energy). However, few data has been published on the surface free energy (SFE) of CrN x films at temperatures in the range 20-170 deg. C. In this study CrN x thin films with CrN, Cr(N), Cr 2 N (and mixture of these phases) were prepared using closed field unbalanced magnetron sputtering at a wide range of Cr +2 emission intensity. The contact angles of water, di-iodomethane and ethylene glycol on the coated surfaces were measured at temperatures in the range 20-170 deg. C using a Dataphysics OCA-20 contact angle analyzer. The surface free energy of the CrN x films and their components (e.g., dispersion, polar) were calculated using the Owens-Wendt geometric mean approach. The influences of CrN x film surface roughness and microstructure on the surface free energy were investigated by atomic force microscopy (AFM) and X-ray diffraction (XRD), respectively. The experimental results showed that the lowest total SFE was obtained corresponding to CrN at temperature in 20 deg. C. This is lower than that of Cr(N), Cr 2 N (and mixture of these phases). The total SFE, dispersive SFE and polar SFE of CrN x films decreased with increasing surface temperature. The film roughness has an obvious effect on the SFE and there is tendency for the SFE to increase with increasing film surface roughness

  14. Measurement of surface charges on the dielectric film based on field mills under the HVDC corona wire

    Donglai, WANG; Tiebing, LU; Yuan, WANG; Bo, CHEN; Xuebao, LI

    2018-05-01

    The ion flow field on the ground is one of the significant parameters used to evaluate the electromagnetic environment of high voltage direct current (HVDC) power lines. HVDC lines may cross the greenhouses due to the restricted transmission corridors. Under the condition of ion flow field, the dielectric films on the greenhouses will be charged, and the electric fields in the greenhouses may exceed the limit value. Field mills are widely used to measure the ground-level direct current electric fields under the HVDC power lines. In this paper, the charge inversion method is applied to calculate the surface charges on the dielectric film according to the measured ground-level electric fields. The advantages of hiding the field mill probes in the ground are studied. The charge inversion algorithm is optimized in order to decrease the impact of measurement errors. Based on the experimental results, the surface charge distribution on a piece of quadrate dielectric film under a HVDC corona wire is studied. The enhanced effect of dielectric film on ground-level electric field is obviously weakened with the increase of film height. Compared with the total electric field strengths, the normal components of film-free electric fields at the corresponding film-placed positions have a higher effect on surface charge accumulation.

  15. Gold nanoparticle plasmon resonance in near-field coupled Au NPs layer/Al film nanostructure: Dependence on metal film thickness

    Yeshchenko, Oleg A.; Kozachenko, Viktor V.; Naumenko, Antonina P.; Berezovska, Nataliya I.; Kutsevol, Nataliya V.; Chumachenko, Vasyl A.; Haftel, Michael; Pinchuk, Anatoliy O.

    2018-05-01

    We study the effects of coupling between plasmonic metal nanoparticles and a thin metal film by using light extinction spectroscopy. A planar monolayer of gold nanoparticles located near an aluminum thin film (thicknesses within the range of 0-62 nm) was used to analyze the coupling between the monolayer and the thin metal film. SPR peak area increase for polymer coated Au NPs, non-monotonical behavior of the peak area for bare Au NPs, as well as red shift and broadening of SPR at the increase of the Al film thickness have been observed. These effects are rationalized as a result of coupling of the layer of Au NPs with Al film through the field of localized surface plasmons in Au NPs that causes the excitation of collective plasmonic gap mode in the nanostructure. An additional mechanism for bare Au NPs is the non-radiative damping of SPR that is caused by the electrical contact between metal NPs and film.

  16. Effect of an 1800 MHz electromagnetic field emitted during embryogenesis on the blood picture of one-day-old domestic hen chicks (Gallus gallus domesticus

    Krzysztof Pawlak

    2018-01-01

    Full Text Available Exposure to artificial electromagnetic fields emitted mainly by mobile telephony has been steadily increasing with the development of modern technology. Haematological indices are among the most common indicators of the body’s physiological status. The aim of the study was to determine the effect of an 1800 MHz electromagnetic field emission on the blood picture of one-day-old domestic hen chicks. During the experiment, chick embryos were exposed to artificial electromagnetic fields throughout incubation for 13 ´ 2 min/day, 4 ´ 10 min/day and 1 ´ 40 min/day. After hatching, blood was collected from 10 one-day-old chicks from each group to determine: red blood cell count, haemoglobin concentration, haematocrit, mean corpuscular volume, mean corpuscular haemoglobin, mean corpuscular haemoglobin concentration, white blood cell count, and leukocyte differential count. In addition, the heterophil/lymphocyte ratio was calculated. The present study is probably the first to show an increase in the red blood cell count, haemoglobin concentration, haematocrit, white blood cell count, segmented heterophils and the heterophil/lymphocyte ratio, and a decrease in lymphocyte percentage of embryos exposed to an 1800 MHz electromagnetic field. The observed changes may be indicative of the stress-inducing effect of EMF on living organisms.

  17. The effect of electric field strength on electroplex emission at the interface of NPB/PBD organic light-emitting diodes

    Zhao, De-Wei; Xu, Zheng; Zhang, Fu-Jun; Song, Shu-Fang; Zhao, Su-Ling; Wang, Yong; Yuan, Guang-Cai; Zhang, Yan-Fei; Xu, Hong-Hua

    2007-02-01

    Organic light-emitting diode (OLED) based on two kinds of blue emission materials N, N'-bis(1-naphthyl)- N, N'-diphenyl-l,l'-diphenyl-4,4'-diamine (NPB) and 2-(4-biphenylyl)-5(4- tert-butyl-phenyl)-1,3,4-oxadiazole (PBD) was fabricated. There is only one emission peak in photoluminescence (PL) spectrum which originates from NPB exciton emission. And the electroluminescence (EL) emission peaks have an apparent red-shift with the increase of driving voltage. The red-shift emission from exciplex emission could be ruled out. Thus, by the method of Gaussian fitting it should be ascribed to the overlap of exciton emission and electroplex emission which occurs at the interface between NPB and PBD. The formation of the electroplex emission under high electric field is analyzed.

  18. Active vacuum brazing of CNT films to metal substrates for superior electron field emission performance

    Longtin, Rémi; Sanchez-Valencia, Juan Ramon; Shorubalko, Ivan; Furrer, Roman; Hack, Erwin; Elsener, Hansrudolf; Gröning, Oliver; Greenwood, Paul; Rupesinghe, Nalin; Teo, Kenneth; Leinenbach, Christian; Gröning, Pierangelo

    2015-02-01

    The joining of macroscopic films of vertically aligned multiwalled carbon nanotubes (CNTs) to titanium substrates is demonstrated by active vacuum brazing at 820 °C with a Ag-Cu-Ti alloy and at 880 °C with a Cu-Sn-Ti-Zr alloy. The brazing methodology was elaborated in order to enable the production of highly electrically and thermally conductive CNT/metal substrate contacts. The interfacial electrical resistances of the joints were measured to be as low as 0.35 Ω. The improved interfacial transport properties in the brazed films lead to superior electron field-emission properties when compared to the as-grown films. An emission current of 150 μA was drawn from the brazed nanotubes at an applied electric field of 0.6 V μm-1. The improvement in electron field-emission is mainly attributed to the reduction of the contact resistance between the nanotubes and the substrate. The joints have high re-melting temperatures up to the solidus temperatures of the alloys; far greater than what is achievable with standard solders, thus expanding the application potential of CNT films to high-current and high-power applications where substantial frictional or resistive heating is expected.

  19. A rapidly equilibrating, thin film, passive water sampler for organic contaminants; characterization and field testing

    St George, Tiffany [Department of Marine Science, University of Connecticut, 1080 Shennecossett Road, Groton, CT 06340 (United States); Department of Science, United States Coast Guard Academy, 27 Mohegan Ave., New London, CT 06320 (United States); Vlahos, Penny, E-mail: penny.vlahos@uconn.ed [Department of Chemistry, University of Connecticut, 55 Eagleville Road, Storrs, CT 06269 (United States); Department of Marine Science, University of Connecticut, 1080 Shennecossett Road, Groton, CT 06340 (United States); Harner, Tom [Science and Technology Branch, Environment Canada, 4905 Dufferin Street, Toronto, Ontario M3H 5T4 (Canada); Helm, Paul [Environmental Monitoring and Reporting Branch, Ontario Ministry of the Environment, 125 Resources Rd, Toronto, Ontario M9P 3V6 (Canada); Wilford, Bryony [Science and Technology Branch, Environment Canada, 4905 Dufferin Street, Toronto, Ontario M3H 5T4 (Canada)

    2011-02-15

    Improving methods for assessing the spatial and temporal resolution of organic compound concentrations in marine environments is important to the sustainable management of our coastal systems. Here we evaluate the use of ethylene vinyl acetate (EVA) as a candidate polymer for thin-film passive sampling in waters of marine environments. Log K{sub EVA-W} partition coefficients correlate well (r{sup 2} = 0.87) with Log K{sub OW} values for selected pesticides and polychlorinated biphenyls (PCBs) where Log K{sub EVA-W} = 1.04 Log K{sub OW} + 0.22. EVA is a suitable polymer for passive sampling due to both its high affinity for organic compounds and its ease of coating at sub-micron film thicknesses on various substrates. Twelve-day field deployments were effective in detecting target compounds with good precision making EVA a potential multi-media fugacity meter. - Research highlights: Calibration and field testing of a thin-film passive sampler in marine systems. Ethylene vinyl acetate (EVA) is effective for a wide spectrum of organic compounds. EVA performs with high precision and reproducibility. EVA is effective in marine systems at environmentally relevant concentrations. EVA is recommended as a multi-media fugacity meter for environmental applications. - An ethylene vinyl acetate (EVA), thin-film passive sampler for the detection of organic compounds in marine environments is calibrated and field tested.

  20. Piezoelectric response of a PZT thin film to magnetic fields from permanent magnet and coil combination

    Guiffard, B.; Seveno, R.

    2015-01-01

    In this study, we report the magnetically induced electric field E 3 in Pb(Zr0.57Ti0.43)O3 (PZT) thin films, when they are subjected to both dynamic magnetic induction (magnitude B ac at 45 kHz) and static magnetic induction ( B dc) generated by a coil and a single permanent magnet, respectively. It is found that highest sensitivity to B dc——is achieved for the thin film with largest effective electrode. This magnetoelectric (ME) effect is interpreted in terms of coupling between eddy current-induced Lorentz forces (stress) in the electrodes of PZT and piezoelectricity. Such coupling was evidenced by convenient modelling of experimental variations of electric field magnitude with both B ac and B dc induction magnitudes, providing imperfect open circuit condition was considered. Phase angle of E 3 versus B dc could also be modelled. At last, the results show that similar to multilayered piezoelectric-magnetostrictive composite film, a PZT thin film made with a simple manufacturing process can behave as a static or dynamic magnetic field sensor. In this latter case, a large ME voltage coefficient of under B dc = 0.3 T was found. All these results may provide promising low-cost magnetic energy harvesting applications with microsized systems.

  1. Field-modulation spectroscopy of pentacene thin films using field-effect devices: Reconsideration of the excitonic structure

    Haas, Simon; Matsui, Hiroyuki; Hasegawa, Tatsuo

    2010-10-01

    We report pure electric-field effects on the excitonic absorbance of pentacene thin films as measured by unipolar field-effect devices that allowed us to separate the charge accumulation effects. The field-modulated spectra between 1.8 and 2.6 eV can be well fitted with the first derivative curve of Frenkel exciton absorption and its vibronic progression, and at higher energy a field-induced feature appears at around 2.95 eV. The results are in sharp contrast to the electroabsorption spectra reported by Sebastian in previous studies [Chem. Phys. 61, 125 (1981)10.1016/0301-0104(81)85055-0], and leads us to reconsider the excitonic structure including the location of charge-transfer excitons. Nonlinear π -electronic response is discussed based on second-order electro-optic (Kerr) spectra.

  2. Quantum capacitance of an ultrathin topological insulator film in a magnetic field

    Tahir, M.; Sabeeh, K.; Schwingenschlö gl, Udo

    2013-01-01

    We present a theoretical study of the quantum magnetocapacitance of an ultrathin topological insulator film in an external magnetic field. The study is undertaken to investigate the interplay of the Zeeman interaction with the hybridization between the upper and lower surfaces of the thin film. Determining the density of states, we find that the electron-hole symmetry is broken when the Zeeman and hybridization energies are varied relative to each other. This leads to a change in the character of the magnetocapacitance at the charge neutrality point. We further show that in the presence of both Zeeman interaction and hybridization the magnetocapacitance exhibits beating at low and splitting of the Shubnikov de Haas oscillations at high perpendicular magnetic field. In addition, we address the crossover from perpendicular to parallel magnetic field and find consistency with recent experimental data.

  3. Quantum capacitance of an ultrathin topological insulator film in a magnetic field

    Tahir, M.

    2013-02-12

    We present a theoretical study of the quantum magnetocapacitance of an ultrathin topological insulator film in an external magnetic field. The study is undertaken to investigate the interplay of the Zeeman interaction with the hybridization between the upper and lower surfaces of the thin film. Determining the density of states, we find that the electron-hole symmetry is broken when the Zeeman and hybridization energies are varied relative to each other. This leads to a change in the character of the magnetocapacitance at the charge neutrality point. We further show that in the presence of both Zeeman interaction and hybridization the magnetocapacitance exhibits beating at low and splitting of the Shubnikov de Haas oscillations at high perpendicular magnetic field. In addition, we address the crossover from perpendicular to parallel magnetic field and find consistency with recent experimental data.

  4. Fabrication and characteristics of magnetic field sensors based on nano-polysilicon thin-film transistors

    Zhao Xiaofeng; Wen Dianzhong; Zhuang Cuicui; Cao Jingya; Wang Zhiqiang

    2013-01-01

    A magnetic field sensor based on nano-polysilicon thin films transistors (TFTs) with Hall probes is proposed. The magnetic field sensors are fabricated on 〈100〉 orientation high resistivity (ρ > 500 Ω·cm) silicon substrates by using CMOS technology, which adopt nano-polysilicon thin films with thicknesses of 90 nm and heterojunction interfaces between the nano-polysilicon thin films and the high resistivity silicon substrates as the sensing layers. The experimental results show that when V DS = 5.0 V, the magnetic sensitivities of magnetic field sensors based on nano-polysilicon TFTs with length—width ratios of 160 μm/80 μm, 320 μm/80 μm and 480 μm/80 μm are 78 mV/T, 55 mV/T and 34 mV/T, respectively. Under the same conditions, the magnetic sensitivity of the obtained magnetic field sensor is significantly improved in comparison with a Hall magnetic field sensor adopting silicon as the sensing layers. (semiconductor technology)

  5. Investigation of film flow of a conducting fluid in a transverse magnetic field, (1)

    Oshima, Shuzo; Yamane, Ryuichiro; Mochimaru, Yoshihiro; Sudo, Kouzo.

    1985-01-01

    Accompanying the development of large electromagnetic pumps transporting liquid metals used as the heat transfer media for nuclear power plants and the electromagnetic flow meters of large capacity, many researches have been carried out on the flow of liquid metals under the action of magnetic field. The utilization of electromagnetic force for continuous casting facilities seems very effective for the total processes from refining to solidification. Hereafter, it will be a technologically important problem to clarify the behavior of electro-conductive fluid with free surface under the action of magnetic field concerning the non-contact control of the interface form of molten metals as well as the cooling problem in nuclear fusion reactors. In this study, first the flow phenomena of MHD liquid film flow in a magnetic field with intensity gradient was analytically examined, and the effect of magnetic field gradient exerted on liquid film thickness and liquid surface form was clarified. Next, the experiment using mercury was carried out. For liquid film flow, magnetic field gradient acted as a kind of non-contact weir. (Kako, I.)

  6. Rapid ELISA Using a Film-Stack Reaction Field with Micropillar Arrays.

    Suzuki, Yuma; Morioka, Kazuhiro; Ohata, Soichiro; Shimizu, Tetsuhide; Nakajima, Hizuru; Uchiyama, Katsumi; Yang, Ming

    2017-07-11

    A film-stack reaction field with a micropillar array using a motor stirrer was developed for the high sensitivity and rapid enzyme-linked immunosorbent assay (ELISA) reaction. The effects of the incubation time of a protein (30 s, 5 min, and 10 min) on the fluorescence intensity in ELISAs were investigated using a reaction field with different micropillar array dimensions (5-µm, 10-µm and 50-µm gaps between the micropillars). The difference in fluorescence intensity between the well with the reaction field of 50-µm gap for the incubation time of 30 s and the well without the reaction field with for incubation time of 10 min was 6%. The trend of the fluorescence intensity in the gap between the micro pillars in the film-stack reaction field was different between the short incubation time and the long incubation time. The theoretical analysis of the physical parameters related with the biomolecule transport indicated that the reaction efficiency defined in this study was the dominant factor determining the fluorescence intensity for the short incubation time, whereas the volumetric rate of the circulating flow through the space between films and the specific surface area were the dominant factors for the long incubation time.

  7. An all-field-range description of the critical current density in superconducting YBCO films

    Golovchanskiy, I A; Pan, A V; Shcherbakova, O V; Fedoseev, S A; Dou, S X

    2011-01-01

    A new critical current density (J c ) model for high-quality YBCO (YBa 2 Cu 3 O 7 ) thin films has been proposed, combining thermally activated flux creep with a vortex pinning potential for columnar defects. The pinning for thermally activated vortices has been described as strong pinning on chains of individual edge dislocations that form low-angle domain boundaries in high-quality YBCO thin films. The model yields an adequate description of the J c behaviour over the whole applied field range, as verified by direct measurements of J c in YBCO thin films grown by pulsed-laser deposition. It also indicates that the effective pinning landscape changes under the influence of the external conditions. Remarkably, the pinning potential obtained from the model is consistent with the values obtained for columnar defects, which confirms the validity of the overall approach.

  8. Fabrication of highly ordered nanoporous alumina films by stable high-field anodization

    Li Yanbo; Zheng Maojun; Ma Li; Shen Wenzhong

    2006-01-01

    Stable high-field anodization (1500-4000 A m -2 ) for the fabrication of highly ordered porous anodic alumina films has been realized in a H 3 PO 4 -H 2 O-C 2 H 5 OH system. By maintaining the self-ordering voltage and adjusting the anodizing current density, high-quality self-ordered alumina films with a controllable inter-pore distance over a large range are achieved. The high anodizing current densities lead to high-speed film growth (4-10 μm min -1 ). The inter-pore distance is not solely dependent on the anodizing voltage, but is also influenced by the anodizing current density. This approach is simple and cost-effective, and is of great value for applications in diverse areas of nanotechnology

  9. Electric field effect on exchange interaction in ultrathin Co films with ionic liquids

    Ishibashi, Mio; Yamada, Kihiro T.; Shiota, Yoichi; Ando, Fuyuki; Koyama, Tomohiro; Kakizakai, Haruka; Mizuno, Hayato; Miwa, Kazumoto; Ono, Shimpei; Moriyama, Takahiro; Chiba, Daichi; Ono, Teruo

    2018-06-01

    Electric-field modulations of magnetic properties have been extensively studied not only for practical applications but also for fundamental interest. In this study, we investigated the electric field effect on the exchange interaction in ultrathin Co films with ionic liquids. The exchange coupling J was characterized from the direct magnetization measurement as a function of temperature using Pt/ultrathin Co/MgO structures. The trend of the electric field effect on J is in good agreement with that of the theoretical prediction, and a large change in J by applying a gate voltage was observed by forming an electric double layer using ionic liquids.

  10. Effective suppression of efficiency droop in GaN-based light-emitting diodes: role of significant reduction of carrier density and built-in field

    Yoo, Yang-Seok; Na, Jong-Ho; Son, Sung Jin; Cho, Yong-Hoon

    2016-10-01

    A critical issue in GaN-based high power light-emitting diodes (LEDs) is how to suppress the efficiency droop problem occurred at high current injection while improving overall quantum efficiency, especially in conventional c-plane InGaN/GaN quantum well (QW), without using complicated bandgap engineering or unconventional materials and structures. Although increasing thickness of each QW may decrease carrier density in QWs, formation of additional strain and defects as well as increased built-in field effect due to enlarged QW thickness are unavoidable. Here, we propose a facile and effective method for not only reducing efficiency droop but also improving quantum efficiency by utilizing c-plane InGaN/GaN QWs having thinner barriers and increased QW number while keeping the same single well thickness and total active layer thickness. As the barrier thickness decreases and the QW number increases, both internal electric field and carrier density within QWs are simultaneously reduced without degradation of material quality. Furthermore, we found overall improved efficiency and reduced efficiency droop, which was attributed to the decrease of the built-in field and to less influence by non-radiative recombination processes at high carrier density. This simple and effective approach can be extended further for high power ultraviolet, green, and red LEDs.

  11. Field Measurements of Trace Gases and Aerosols Emitted by Undersampled Combustion Sources Including Wood and Dung Cooking Fires, Garbage and Crop Residue Burning, and Indonesian Peat Fires

    Stockwell, C.; Jayarathne, T. S.; Goetz, D.; Simpson, I. J.; Selimovic, V.; Bhave, P.; Blake, D. R.; Cochrane, M. A.; Ryan, K. C.; Putra, E. I.; Saharjo, B.; Stone, E. A.; DeCarlo, P. F.; Yokelson, R. J.

    2017-12-01

    Field measurements were conducted in Nepal and in the Indonesian province of Central Kalimantan to improve characterization of trace gases and aerosols emitted by undersampled combustion sources. The sources targeted included cooking with a variety of stoves, garbage burning, crop residue burning, and authentic peat fires. Trace gas and aerosol emissions were studied using a land-based Fourier transform infrared spectrometer, whole air sampling, photoacoustic extinctiometers (405 and 870nm), and filter samples that were analyzed off-line. These measurements were used to calculate fuel-based emission factors (EFs) for up to 90 gases, PM2.5, and PM2.5 constituents. The aerosol optical data measured included EFs for the scattering and absorption coefficients, the single scattering albedo (at 870 and 405 nm), as well as the absorption Ångström exponent. The emissions varied significantly by source, although light absorption by both brown and black carbon (BrC and BC, respectively) was important for all non-peat sources. For authentic peat combustion, the emissions of BC were negligible and absorption was dominated by organic aerosol. The field results from peat burning were in reasonable agreement with recent lab measurements of smoldering Kalimantan peat and compare well to the limited data available from other field studies. The EFs can be used with estimates of fuel consumption to improve regional emissions inventories and assessments of the climate and health impacts of these undersampled sources.

  12. Influence of Magnetic Field on Electric Charge Transport in Holomiun Thin Films at Low Temperatures

    Jan Dudas

    2005-01-01

    Full Text Available Holmium thin films were prepared by evaporation in ultrahigh vacuum (UHV and high precision electrical resistance measurements were performed on them as well as on holomium bulk sample in the wide temperature range from 4,2 K up to the room temperature. Electric charge transport is profoundly influenced by the magnetic structure at low temperatures and a "knee-like" resistance anomaly was observed near the transportation from paramagnetic state to basal-plane spiral structure in bulk with the Neel temperature TN=128,9 K and below ~ 122 K in thin Ho films in a thickness range from 98 nm to 215 nm. Unexpected resistance minimum at ~ 9 K and a slope´s charge of the R vs. T curve near ~ 170 K was observed in 215 nm thin film. Application of magnetic field parallel to the substrate and thin film plane for temperatures below ~ 150 K caused the decrease of resistence value with increasing magnetic flux density. Increasing suppression of the TN value up to ~ 5 K with increasing flux density value up to 5 T was observed in Ho films

  13. Structural and morphological changes in P3HT thin film transistors applying an electric field

    Tiwari, Deepak Kumar; Grigorian, Souren; Pietsch, Ullrich [University of Siegen (Germany); Flesch, Heinz; Resel, Roland [University of Siegen (Germany); Graz University of Technology (Austria)

    2010-07-01

    We report on electric field dependent crystalline structure and morphological changes of drop casting and spin coated poly(3-hexylthiophene) (P3HT) thin films. In order to probe the morphological changes induced by an applied electric field the samples were covered with thin source/drain electrodes separated by a small channel of 2 mm width. A series of x-ray reflectivity, X-ray grazing incidence out-of-plane and in-plane scans have been performed as function of the applied electric voltage. The (100) peak shows a decrease in intensity with increase of the applied electric field. This might be caused by Joule heating and the creation of current induced defects in the P3HT film. On other hand the (020) peak intensity shows much stronger changes with applied field. Considering the *-* stacking direction the measured effect can be directly related to a change in the electric transport. The observed changes in structure are reversible and the current-voltage cycle can be repeated several times. For X-ray reflectivity major changes have been found close to critical angle of total external reflection indicating the film becomes less dense and increases in surface roughness with increase of the voltage. This change in surface behaviour could be confirmed by in-situ AFM measurements.

  14. High dose per fraction dosimetry of small fields with Gafchromic EBT2 film

    Hardcastle, Nicholas; Basavatia, Amar; Bayliss, Adam; Tome, Wolfgang A.

    2011-01-01

    Purpose: Small field dosimetry is prone to uncertainties due to the lack of electronic equilibrium and the use of the correct detector size relative to the field size measured. It also exhibits higher sensitivity to setup errors as well as large variation in output with field size and shape. Radiochromic film is an attractive method for reference dosimetry in small fields due to its ability to provide 2D dose measurements while having minimal impact on the dose distribution. Gafchromic EBT2 has a dose range of up to 40 Gy; therefore, it could potentially be useful for high dose reference dosimetry with high spatial resolution. This is a requirement in stereotactic radiosurgery deliveries, which deliver high doses per fraction to small targets. Methods: Targets of 4 mm and 12 mm diameters were treated to a minimum peripheral dose of 21 Gy prescribed to 80% of the maximum dose in one fraction. Target doses were measured with EBT2 film (both targets) and an ion chamber (12 mm target only). Measured doses were compared with planned dose distributions using profiles through the target and minimum peripheral dose coverage. Results: The measured target doses and isodose coverage agreed with the planned dose within ±1 standard deviation of three measurements, which were 2.13% and 2.5% for the 4 mm and 12 mm targets, respectively. Conclusions: EBT2 film is a feasible dosimeter for high dose per fraction reference 2D dosimetry.

  15. Tuning microstructure and magnetic properties of electrodeposited CoNiP films by high magnetic field annealing

    Wu, Chun; Wang, Kai [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819 (China); Li, Donggang, E-mail: lidonggang@smm.neu.edu.cn [School of Metallurgy, Northeastern University, Shenyang 110819 (China); Lou, Changsheng [School of Materials Science and Engineering, Shenyang Ligong University, Shenyang 110159 (China); Zhao, Yue; Gao, Yang [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819 (China); Wang, Qiang, E-mail: wangq@mail.neu.edu.cn [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819 (China)

    2016-10-15

    A high magnetic field (up to 12 T) has been used to anneal 2.6-µm-thick Co{sub 50}Ni{sub 40}P{sub 10} films formed by pulse electrodeposition. The effects of high magnetic field annealing on the microstructure and magnetic properties of CoNiP thin films have been investigated. It was found that a high magnetic field accelerated a phase transformation from fcc to hcp and enhanced the preferred hcp-(002) orientation during annealing. Compared with the films annealed without a magnetic field, annealing at 12 T decreased the surface particle size, roughness, and coercivity, but increased the saturation magnetization and remanent magnetization of CoNiP films. The out-of-plane coercivity was higher than that the in-plane for the as-deposited films. After annealing without a magnetic field, the out-of-plane coercivity was equal to that of the in-plane. However, the out-of-plane coercivity was higher than that of the in-plane when annealing at 12 T. These results indicate that high magnetic field annealing is an effective method for tuning the microstructure and magnetic properties of thin films. - Highlights: • High magnetic field annealing accelerated phase transformation from γ to ε. • High magnetic field annealing enhanced preferred hcp-(002) orientation. • High magnetic field annealing decreased particle size, roughness and coercivity. • High magnetic field annealing increased the saturation and remanent magnetization.

  16. SU-F-T-579: Extrapolation Techniques for Small Field Dosimetry Using Gafchromic EBT3 Film

    Morales, J [Chris OBrien Lifehouse, Camperdown, NSW (Australia)

    2016-06-15

    Purpose: The purpose of this project is to test an experimental approach using an extrapolation technique for Gafchromic EBT3 film for small field x-ray dosimetry. Methods: Small fields from a Novalis Tx linear accelerator with HD Multileaf Collimators with 6 MV was used. The field sizes ranged from 5 × 5 to 50 × 50 mm2 MLC fields and a range of circular cones of 4 to 30 mm2 diameters. All measurements were performed in water at an SSD of 100 cm and at a depth of 10 cm. The relative output factors (ROFs) were determined from an extrapolation technique developed to eliminate the effects of partial volume averaging in film scan by scanning films with high resolution (1200 DPI). The size of the regions of interest (ROI) was varied to produce a plot of ROFs versus ROI which was then extrapolated to zero ROI to determine the relative output factor. The results were compared with other solid state detectors with proper correction, namely, IBA SFD diode, PTW 60008 and PTW 60012 diode. Results: For the 4 mm cone, the extrapolated ROF had a value of 0.658 ± 0.014 as compared to 0.642 and 0.636 for 0.5 mm and 1 mm2 ROI analysis, respectively. This showed a change in output factor of 2.4% and 3.3% at this comparative ROI sizes. In comparison, the 25 mm cone had a difference in measured output factor of 0.3% and 0.5% between 0.5 and 1.0 mm, respectively compared to zero volume. For the fields defined by MLCs a difference of up to 2% for 5×5 mm2 was observed. Conclusion: A measureable difference can be seen in ROF based on the ROI when radiochromic film is used. Using extrapolation technique from high resolution scanning a good agreement can be achieved.

  17. Film-cooled turbine endwall in a transonic flow field; Filmgekuehlte Turbinenplattform in transsonischem Stroemungsfeld

    Nicklas, M.

    2000-11-01

    Aero and thermodynamic measurements at the endwall of a turbine nozzle guide vane were carried out. These investigations are the first where the complete blade passage at the endwall in a transonic flow field is analysed for heat transfer and adiabatic film-cooling effectiveness. The aerodynamic measurements identify an intensive interaction between the coolant air and the secondary flow field. Similarly strong variations in heat transfer and film-cooling effectiveness were found. Analysis of the heat transfer measurements indicates that the heat transfer represents an indispensable tool for the evaluation of platform film-cooling design. On the basis of infrared temperature measurements, a procedure for accurate analysis of heat transfer and film-cooling effectiveness in a complex transonic flow field was developed. This measurement technique combines high accuracy with flexibility of application. These investigations have led to design improvements for film-cooling systems at the platform. (orig.) [German] Aero- und thermodynamische Messungen an einer Plattform eines Turbinenleitrads werden beschrieben. Erstmals wird in einem transsonischen Stroemungsfeld die komplette Seitenwand bezueglich des Waermeuebergangs und der adiabaten Filmkuehleffektivitaet untersucht. Die aerodynamischen Messungen zeigen eine intensive Wechselwirkung der Kuehlluft mit dem Sekundaerstroemungsfeld. Daraus resultierend treten starke Aenderungen des Waermeuebergangs und der Filmkuehleffektivitaet auf. Die Resultate der Waermeuebergangsmessungen zeigen, dass der Waermeuebergang eine wichtige Groesse fuer die Bewertung eines Filmkuehldesigns an einer Plattform darstellt. Ein Messverfahren auf der Grundlage von Infrarot-Temperaturmessungen fuer eine genaue Analyse des Waermeuebergangs und der Filmkuehleffektivitaet in den komplexen Verhaeltnissen einer transsonischen Stroemung wurde entwickelt. Mit der verwendeten Messtechnik wird eine hohe Genauigkeit bei der Ermittlung der quantitativen

  18. Electric-field modulation of ferromagnetism in hexagonal chromium telluride thin film

    Akiyama, Ryota; Oikawa, Haruyoshi; Yamawaki, Kazuma; Kuroda, Shinji

    2014-01-01

    We report the electric-field modulation of magnetism of a hexagonal Cr 1-δ Te thin film. A gate voltage V G is ap-plied in the field effect capacitor (FEC) structure consisting of electric double-layer capacitor (EDLC) of an ion liquid and a 2nm-thick Cr 1-δ Te layer grown by molecular beam epitaxy (MBE) and the magnetization of the layer is directly measured using a superconducting quantum interference device (SQUID) magnetometer in the both configurations with magnetic fields perpendicular or parallel to the film plane. As a result, we observe a clear change in the magnetization vs. magnetic field (M-H) curves by applying VG at a low temperature of 15 K in the perpendicular field configuration; the magnetization increases and the coercivity decreases by applying either positive or negative gate voltage. When the temperature is increased up to 160K, slightly lower than the Curie temperature, or the magnetization was measured in the in-plane field configuration, the magnetization increases similarly by applying either positive or negative gate voltage, but the amount of the increase becomes much smaller. A possible mechanism of the electric-field modulation is discussed in relation to the Cr vacancies in the Cr 1-δ Te layer. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Electric-field modulation of ferromagnetism in hexagonal chromium telluride thin film

    Akiyama, Ryota; Oikawa, Haruyoshi; Yamawaki, Kazuma; Kuroda, Shinji [Institute of Materials Science, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8573 (Japan)

    2014-07-15

    We report the electric-field modulation of magnetism of a hexagonal Cr{sub 1-δ}Te thin film. A gate voltage V{sub G} is ap-plied in the field effect capacitor (FEC) structure consisting of electric double-layer capacitor (EDLC) of an ion liquid and a 2nm-thick Cr{sub 1-δ}Te layer grown by molecular beam epitaxy (MBE) and the magnetization of the layer is directly measured using a superconducting quantum interference device (SQUID) magnetometer in the both configurations with magnetic fields perpendicular or parallel to the film plane. As a result, we observe a clear change in the magnetization vs. magnetic field (M-H) curves by applying VG at a low temperature of 15 K in the perpendicular field configuration; the magnetization increases and the coercivity decreases by applying either positive or negative gate voltage. When the temperature is increased up to 160K, slightly lower than the Curie temperature, or the magnetization was measured in the in-plane field configuration, the magnetization increases similarly by applying either positive or negative gate voltage, but the amount of the increase becomes much smaller. A possible mechanism of the electric-field modulation is discussed in relation to the Cr vacancies in the Cr{sub 1-δ}Te layer. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Excellent field emission properties of vertically oriented CuO nanowire films

    Long Feng

    2018-04-01

    Full Text Available Oriented CuO nanowire films were synthesized on a large scale using simple method of direct heating copper grids in air. The field emission properties of the sample can be enhanced by improving the aspect ratio of the nanowires just through a facile method of controlling the synthesis conditions. Although the density of the nanowires is large enough, the screen effect is not an important factor in this field emission process because few nanowires sticking out above the rest. Benefiting from the unique geometrical and structural features, the CuO nanowire samples show excellent field emission (FE properties. The FE measurements of CuO nanowire films illustrate that the sample synthesized at 500 °C for 8 h has a comparatively low turn-on field of 0.68 V/μm, a low threshold field of 1.1 V/μm, and a large field enhancement factor β of 16782 (a record high value for CuO nanostructures, to the best of our knowledge, indicating that the samples are promising candidates for field emission applications.

  1. Linear least-squares method for global luminescent oil film skin friction field analysis

    Lee, Taekjin; Nonomura, Taku; Asai, Keisuke; Liu, Tianshu

    2018-06-01

    A data analysis method based on the linear least-squares (LLS) method was developed for the extraction of high-resolution skin friction fields from global luminescent oil film (GLOF) visualization images of a surface in an aerodynamic flow. In this method, the oil film thickness distribution and its spatiotemporal development are measured by detecting the luminescence intensity of the thin oil film. From the resulting set of GLOF images, the thin oil film equation is solved to obtain an ensemble-averaged (steady) skin friction field as an inverse problem. In this paper, the formulation of a discrete linear system of equations for the LLS method is described, and an error analysis is given to identify the main error sources and the relevant parameters. Simulations were conducted to evaluate the accuracy of the LLS method and the effects of the image patterns, image noise, and sample numbers on the results in comparison with the previous snapshot-solution-averaging (SSA) method. An experimental case is shown to enable the comparison of the results obtained using conventional oil flow visualization and those obtained using both the LLS and SSA methods. The overall results show that the LLS method is more reliable than the SSA method and the LLS method can yield a more detailed skin friction topology in an objective way.

  2. Hysteresis, critical fields and superferromagnetism of the film with perpendicular anisotropy

    Kalita, V.M.; Kulyk, M.M.; Ryabchenko, S.M.

    2016-01-01

    This paper is focused on the analysis of hysteresis and critical phenomena of magnetization reversal of superferromagnetic (SFM) state in nanogranular (NG) Co/Al 2 O 3 film with perpendicular anisotropy. It was demonstrated that the transition from the multidomain SFM state to the homogeneous SFM state, during the magnetization process, occurs critically. The value of the field of critical transition to the homogeneous state depends on the demagnetization field, granular anisotropy and interparticle exchange anisotropy. It turned out that the temperature dependence of the coercive force of the film, despite its SFM state, accords with the Neel–Brown formula for anisotropic single-domain ferromagnetic particles, but has an anomalous angular dependence. It was concluded that domain wall motion affects these features of the coercive field. The domain wall movement may occur due to the overturn of magnetic moments of particles in the boundaries between the superdomains. At the same time, the main factors influencing the coercivity are the anisotropy of the particles, which blocks their magnetic moment reorientation, and demagnetizing factor of the film. Together they lead to the anomalous angular dependence of the coercive field. - Highlights: • The transition from the multidomain SFM to homogeneous SFM state occurs critically. • The value of the critical field depends on the direction of the magnetizing field. • Critical transition field depends on the anisotropy of the interparticle exchange. • Dependence of H c (θ H ) differs from expected one for an ensemble of the particles. • Magnetization reversal occurs by turning the particle's moments in domain borders.

  3. The phase diagrams of a ferromagnetic thin film in a random magnetic field

    Zaim, N.; Zaim, A., E-mail: ah_zaim@yahoo.fr; Kerouad, M., E-mail: m.kerouad@fs-umi.ac.ma

    2016-10-07

    In this paper, the magnetic properties and the phase diagrams of a ferromagnetic thin film with a thickness N in a random magnetic field (RMF) are investigated by using the Monte Carlo simulation technique based on the Metropolis algorithm. The effects of the RMF and the surface exchange interaction on the critical behavior are studied. A variety of multicritical points such as tricritical points, isolated critical points, and triple points are obtained. It is also found that the double reentrant phenomenon can appear for appropriate values of the system parameters. - Highlights: • Phase diagrams of a ferromagnetic thin film are examined by the Monte Carlo simulation. • The effect of the random magnetic field on the magnetic properties is studied. • Different types of the phase diagrams are obtained. • The dependence of the magnetization and susceptibility on the temperature are investigated.

  4. MIS field effect transistor with barium titanate thin film as a gate insulator

    Firek, P., E-mail: pfirek@elka.pw.edu.p [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Werbowy, A.; Szmidt, J. [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland)

    2009-11-25

    The properties of barium titanate (BaTiO{sub 3}, BT) like, e.g. high dielectric constant and resistivity, allow it to find numerous applications in field of microelectronics. In this work silicon metal insulator semiconductor field effect transistor (MISFET) structures with BaTiO{sub 3} (containing La{sub 2}O{sub 3} admixture) thin films in a role of gate insulator were investigated. The films were produced by means of radio frequency plasma sputtering (RF PS) of sintered BaTiO{sub 3} + La{sub 2}O{sub 3} (2 wt.%) target. In the paper transfer and output current-voltage (I-V), transconductance and output conductance characteristics of obtained transistors are presented and discussed. Basic parameters of these devices like, e.g. threshold voltage (V{sub TH}), are determined and discussed.

  5. Screen film vs full-field digital mammography: image quality, detectability and characterization of lesions

    Obenauer, S.; Luftner-Nagel, S.; Heyden, D. von; Baum, F.; Grabbe, E.; Munzel, U.

    2002-01-01

    The objective of this study was to compare screen-film mammography (SFM) to full-field digital mammography (FFDM) regarding image quality as well as detectability and characterization of lesions using equivalent images of the same patient acquired with both systems. Two mammography units were used, one with a screen-film system (Senographe DMR) and the other with a digital detector (Senographe 2000D, both GEMS). Screen-film and digital mammograms were performed on 55 patients with cytologically or histologically proven tumors on the same day. Together with these, 75 digital mammograms of patients without tumor and the corresponding previous screen-film mammograms not older than 1.5 years were reviewed by three observers in a random order. Contrast, exposure, and the presence of artifacts were evaluated. Different details, such as the skin, the retromamillary region, and the parenchymal structures, were judged according to a three-point ranking scale. Finally, the detectability of microcalcifications and lesions were compared and correlated to histology. Image contrast was judged to be good in 76%, satisfactory in 20%, and unsatisfactory in 4% of screen-film mammograms. Digital mammograms were judged to be good in 99% and unsatisfactory in 1% of cases. Improper exposure of screen-film system occurred in 18% (10% overexposed and 8% underexposed). Digital mammograms were improperly exposed in 4% of all cases but were of acceptable quality after post-processing. Artifacts, most of them of no significance, were found in 78% of screen-film and in none of the digital mammograms. Different anatomical regions, such as the skin, the retromamillary region, and dense parenchymal areas, were better visualized in digital than in screen-film mammography. All malignant tumors were seen by the three radiologists; however, digital mammograms allowed a better characterization of these lesions to the Breast Imaging Reporting and Data System (BI-RADSZZZ;) categories (FFDM better than

  6. Fabrication of Co thin films using pulsed laser deposition method with or without employing external magnetic field

    Ehsani, M.H., E-mail: Ehsani@semnan.ac.ir [Thin Film Laboratory, Faculty of Physics, Semnan University (Iran, Islamic Republic of); Mehrabad, M. Jalali [Thin Film Laboratory, Faculty of Physics, Semnan University (Iran, Islamic Republic of); Kameli, P. [Department of Physics, Isfahan University of technology, Isfahan 8415683111 (Iran, Islamic Republic of)

    2016-11-01

    In this work, the external magnetic field effects on growth condition during deposition processes of the Co thin films were studied. Two specimens of Co films with different condition (with and without external magnetic field) were synthesized by pulsed laser deposition method. Structural and magnetic properties of the Co thin films were systematically studied, using atomic force microscope analysis and magnetization measurement, respectively. During the deposition processes, the external applied magnetic field had been provided by a permanent magnet. The experimental results show that the external magnetic field enables one to tune the magnetic properties of the deposited thin films. To clarify this effect, using Multi-Physics COMSOL simulation environment, a study of vapor flux by applied magnetic field during deposition were performed. Comparison between experimental data and output data of the simulation show promising accommodation and approve the existence of a strong correlation between the structural and magnetic properties of the specimens, and deposition rate of Co thin films. - Graphical abstract: Simulation results of the cobalt particles tracing sputtered from the source to substrate with an external magnetic field. Convergence of the particles flux (left) and also the spiral motion of the cobalt particles (right) increase dramatically as they approach the substrate and NdFe35 magnet. - Highlights: • The external magnetic field effects on growth condition during deposition processes of the Co thin films were studied. • Structural and magnetic properties of the Co thin films were systematically studied, using atomic force microscope analysis and magnetization measurement, respectively. • The experimental results show that the external magnetic field enables one to tune the magnetic properties of the deposited thin films. • To clarify this effect, using Multi-Physics COMSOL simulation environment, a study of vapor flux by applied magnetic field

  7. Origin of the low frequency radiation emitted by radiative polaritons excited by infrared radiation in planar La2O3 films.

    Vincent-Johnson, Anita J; Schwab, Yosyp; Mann, Harkirat S; Francoeur, Mathieu; Hammonds, James S; Scarel, Giovanna

    2013-01-23

    Upon excitation in thin oxide films by infrared radiation, radiative polaritons are formed with complex angular frequency ω, according to the theory of Kliewer and Fuchs (1966 Phys. Rev. 150 573). We show that radiative polaritons leak radiation with frequency ω(i) to the space surrounding the oxide film. The frequency ω(i) is the imaginary part of ω. The effects of the presence of the radiation leaked out at frequency ω(i) are observed experimentally and numerically in the infrared spectra of La(2)O(3) films on silicon upon excitation by infrared radiation of the 0TH type radiative polariton. The frequency ω(i) is found in the microwave to far infrared region, and depends on the oxide film chemistry and thickness. The presented results might aid in the interpretation of fine structures in infrared and, possibly, optical spectra, and suggest the study of other similar potential sources of electromagnetic radiation in different physical scenarios.

  8. Plastic-Film Mulching for Enhanced Water-Use Efficiency and Economic Returns from Maize Fields in Semiarid China

    Zhang, Peng; Wei, Ting; Cai, Tie; Ali, Shahzad; Han, Qingfang; Ren, Xiaolong; Jia, Zhikuan

    2017-01-01

    Film mulch has gradually been popularized to increase water availability to crops for improving and stabilizing agricultural production in the semiarid areas of Northwest China. To find more sustainable and economic film mulch methods for alleviating drought stress in semiarid region, it is necessary to test optimum planting methods in same cultivation conditions. A field experiment was conducted during 2013 and 2014 to evaluate the effects of different plastic film mulch methods on soil wate...

  9. Magnetoresistivity and Hall resistivity of a YBCO thin film in a tilted magnetic field

    Amirfeiz, M.; Cimberle, M. R.; Ferdeghini, C.; Giannini, E.; Grassano, G.; Marre', D.; Putti, M.; Siri, A. S.

    1997-01-01

    In this paper they present magnetoresistivity and Hall effect measurements performed on a YBCO epitaxial film as a function of the angle θ between the external magnetic field and the a-b planes. The resistivity and Hall effect measurements are analyzed in term of the general scaling approach proposed by Blatter and coworkers; the Hall conductivity data are examined to separate the contributions due to vortices and quasi particles

  10. Properties of epitaxial films of indium phosphides alloyed with erbium in strong electric fields

    Borisov, V.I.; Dvoryankin, V.F.; Korobkin, V.A.; Kudryashov, A.A.; Lopatin, V.V.; Lyubchenko, V.E.; Telegin, A.A.

    1986-01-01

    Temperature dependences of specific resistance and free charge-carrier mobility at low temperatures for indium phosphide films grown by liquid-phase epitaxial method with erbium additions (0.01-0.1 mass%). The main mechanisms of scattering for different temperature regions: scattering on ionized impurities in the rage from 20 to 40 K and lattice scattering at the temperature above 90 K are determined. The current density dependences on applied electric field strength are presented

  11. Anisotropic behaviour of transmission through thin superconducting NbN film in parallel magnetic field

    Šindler, Michal; Tesař, Karel; Koláček, Jan; Skrbek, L.

    2017-01-01

    Roč. 533, Feb (2017), s. 154-157 ISSN 0921-4534 R&D Projects: GA MŠk(CZ) LD14060 Institutional support: RVO:68378271 Keywords : far-infrared transmission * NbN * ssuperconducting film * vortices * terahertz waves * parallel magnetic field Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.404, year: 2016

  12. Anisotropic behaviour of transmission through thin superconducting NbN film in parallel magnetic field

    Šindler, M., E-mail: sindler@fzu.cz [Institute of Physics ASCR, v. v. i., Cukrovarnická 10, CZ-162 53 Praha 6 (Czech Republic); Tesař, R. [Institute of Physics ASCR, v. v. i., Cukrovarnická 10, CZ-162 53 Praha 6 (Czech Republic); Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, CZ-121 16 Praha (Czech Republic); Koláček, J. [Institute of Physics ASCR, v. v. i., Cukrovarnická 10, CZ-162 53 Praha 6 (Czech Republic); Skrbek, L. [Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, CZ-121 16 Praha (Czech Republic)

    2017-02-15

    Highlights: • Transmission through thin NbN film in parallel magnetic field exhibits strong anisotropic behaviour in the terahertz range. • Response for a polarisation parallel with the applied field is given as weighted sum of superconducting and normal state contributions. • Effective medium approach fails to describe response for linear polarisation perpendicular to the applied magnetic field. - Abstract: Transmission of terahertz waves through a thin layer of the superconductor NbN deposited on an anisotropic R-cut sapphire substrate is studied as a function of temperature in a magnetic field oriented parallel with the sample. A significant difference is found between transmitted intensities of beams linearly polarised parallel with and perpendicular to the direction of applied magnetic field.

  13. Thin-Film Magnetic-Field-Response Fluid-Level Sensor for Non-Viscous Fluids

    Woodard, Stanley E.; Shams, Qamar A.; Fox, Robert L.; Taylor, Bryant D.

    2008-01-01

    An innovative method has been developed for acquiring fluid-level measurements. This method eliminates the need for the fluid-level sensor to have a physical connection to a power source or to data acquisition equipment. The complete system consists of a lightweight, thin-film magnetic-field-response fluid-level sensor (see Figure 1) and a magnetic field response recorder that was described in Magnetic-Field-Response Measurement-Acquisition System (LAR-16908-1), NASA Tech Briefs, Vol. 30, No. 6 (June 2006), page 28. The sensor circuit is a capacitor connected to an inductor. The response recorder powers the sensor using a series of oscillating magnetic fields. Once electrically active, the sensor responds with its own harmonic magnetic field. The sensor will oscillate at its resonant electrical frequency, which is dependent upon the capacitance and inductance values of the circuit.

  14. Formation of CdS thin films in a chemical bath environment under the action of an external magnetic field

    Vaskes-Luna, Kh.G.; Zekhe, A.; Nhukhil'o-Garsiya, M.P.; Starostenko, O.

    2000-01-01

    The effect of external magnetic field on obtaining thin CdS films on glass sub layers through the method of chemical deposition from the cadmium chloride aqueous solution is studied. The intensity and direction of the magnetic field during deposition obviously affect the number of physical properties of polycrystalline films: thickness, grain size and optical quality. The films characteristics are studied through an atomic-power microscope, light absorption spectroscopy and conductometry in darkness. The results obtained are interpreted on the basis of notions on the cadmium and sulfur specific interaction in the chemical bath with a magnetic field [ru

  15. Enhanced CO2 uptake at a shallow Arctic Ocean seep field overwhelms the positive warming potential of emitted methane.

    Pohlman, John W; Greinert, Jens; Ruppel, Carolyn; Silyakova, Anna; Vielstädte, Lisa; Casso, Michael; Mienert, Jürgen; Bünz, Stefan

    2017-05-23

    Continued warming of the Arctic Ocean in coming decades is projected to trigger the release of teragrams (1 Tg = 10 6 tons) of methane from thawing subsea permafrost on shallow continental shelves and dissociation of methane hydrate on upper continental slopes. On the shallow shelves (shallow ebullitive methane seep field on the Svalbard margin reveal atmospheric CO 2 uptake rates (-33,300 ± 7,900 μmol m -2 ⋅d -1 ) twice that of surrounding waters and ∼1,900 times greater than the diffusive sea-air methane efflux (17.3 ± 4.8 μmol m -2 ⋅d -1 ). The negative radiative forcing expected from this CO 2 uptake is up to 231 times greater than the positive radiative forcing from the methane emissions. Surface water characteristics (e.g., high dissolved oxygen, high pH, and enrichment of 13 C in CO 2 ) indicate that upwelling of cold, nutrient-rich water from near the seafloor accompanies methane emissions and stimulates CO 2 consumption by photosynthesizing phytoplankton. These findings challenge the widely held perception that areas characterized by shallow-water methane seeps and/or strongly elevated sea-air methane flux always increase the global atmospheric greenhouse gas burden.

  16. Numerical and experimental modeling of liquid metal thin film flows in a quasi-coplanar magentic field

    Morley, Neil B. [Univ. of California, Los Angeles, CA (United States)

    1994-01-01

    Liquid metal film protection of plasma-facing surfaces in fusion reactors is proposed in an effort to counter the adverse effects of high heat and particle fluxes from the burning plasma. Concerns still exist about establishing the required flow in presence of strong magnetic fields and plasma momentum flux typical of a reactor environment. In this work, the flow behavior of the film is examined under such conditions. Analysis of MHD equations as they apply to liquid metal flows with a free surface in the fully-developed limit was undertaken. Solution yields data for velocity profiles and uniform film heights vs key design parameters (channel size, magnetic field magnitude/orientation, channel slope, wall conductivity). These results are compared to previous models to determine accuracy of simplifying assumptions, in particular Hartmann averaging of films along {rvec B}. Effect of a plasma momentum flux on the thin films is also analyzed. The plasma momentum is strong enough in the cases examined to seriously upset the film, especially for lighter elements like Li. Ga performed much better and its possible use is bolstered by calculations. In an experiment in the MeGA-loop MHD facility, coplanar, wide film flow was found to be little affected by the magnetic field due to the elongated nature of the film. Both MHD drag and partial laminarization are observed, supporting the fully- developed film model predictions of the onset of MHD drag and duct flow estimations for flow laminarization.

  17. Numerical and experimental modeling of liquid metal thin film flows in a quasi-coplanar magentic field

    Morley, N.B.

    1994-01-01

    Liquid metal film protection of plasma-facing surfaces in fusion reactors is proposed in an effort to counter the adverse effects of high heat and particle fluxes from the burning plasma. Concerns still exist about establishing the required flow in presence of strong magnetic fields and plasma momentum flux typical of a reactor environment. In this work, the flow behavior of the film is examined under such conditions. Analysis of MHD equations as they apply to liquid metal flows with a free surface in the fully-developed limit was undertaken. Solution yields data for velocity profiles and uniform film heights vs key design parameters (channel size, magnetic field magnitude/orientation, channel slope, wall conductivity). These results are compared to previous models to determine accuracy of simplifying assumptions, in particular Hartmann averaging of films along rvec B. Effect of a plasma momentum flux on the thin films is also analyzed. The plasma momentum is strong enough in the cases examined to seriously upset the film, especially for lighter elements like Li. Ga performed much better and its possible use is bolstered by calculations. In an experiment in the MeGA-loop MHD facility, coplanar, wide film flow was found to be little affected by the magnetic field due to the elongated nature of the film. Both MHD drag and partial laminarization are observed, supporting the fully- developed film model predictions of the onset of MHD drag and duct flow estimations for flow laminarization

  18. MOBILITAS PEMBAWA MUATAN PADA OFET (ORGANIC FIELD EFFECT TRANSISTOR BERBASIS FILM TIPIS

    Sujarwata -

    2014-06-01

    Full Text Available Abstrak __________________________________________________________________________________________ Tujuan penelitian ini adalah pembuatan dan karakterisasi pada OFET (Organic Field Effect Transistor berbasis film tipis dengan struktur bottom-contact. Pembuatan OFET dilakukan dengan cara pencucian substrat dengan etanol dalam ultrasonic cleaner, kemudian dilakukan deposisi elektroda source dan drain di atas substrat SiO2 dengan metode  penguapan hampa udara pada suhu ruang dan teknik lithography. Selanjutnya dilakukan deposisi film tipis CuPc diantara source (S dan drain (D sebagai panjang saluran (channel dan diakhiri dengan deposisi elektrode gate (G. Karakterisai OFET berbasis film tipis dilakukan dengan El-Kahfi 100, untuk menentukan karakteristik keluaran V-I. Hasil karakterisasi OFET dengan panjang channel (L 100 μm dan lebar (W 1 mm, mempunyai daerah aktif, yaitu: 2,80 V sampai dengan 3,42. Mobilitas pembawa muatan OFET untuk daerah saturasi, µ = 0,00182278 cm2 /Vs dan untuk daerah linier, µ = 0,000343818  cm2 /Vs   Abstract __________________________________________________________________________________________ The purpose of this research is to produce and characterize the OFET (Organic Field Effect Transistor based on thin film with bottom-contact structure. The OFET production consists of the substract wash by using ethanol in the ultrasonic cleaner, then electrode deposition of source and drain on the SiO2 substract by using vacuum evaporation in the room temperature and lithography technique.  Then, the deposition of thin film of CuPc between source (S and drain (D was done as the channel length and ended with electrode gate (G deposition. The OFET characterization  with channel length (L  100 μm and wide (W 1 mm  obtained the active area of 2,80 - 3,42 v. While the mobility of OFET charge carrier  obtained µ =  0,00182278 cm2 /Vs for the saturation area and µ = 0,000343818  cm2 /Vs for linier area.

  19. The importance of spinning speed in fabrication of spin-coated organic thin film transistors: Film morphology and field effect mobility

    Kotsuki, Kenji; Tanaka, Hiroshige; Obata, Seiji; Stauss, Sven; Terashima, Kazuo; Saiki, Koichiro

    2014-01-01

    We have investigated the film morphology and the field effect mobility of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) thin films which were formed by spin coating on the SiO 2 substrate with solution-processed graphene electrodes. The domain size and the density of aggregates in the C8-BTBT film showed the same dependence on the spinning speed. These competitive two factors (domain size and density of aggregates) give an optimum spinning speed, at which the field effect mobility of C8-BTBT transistor showed a maximum (2.6 cm 2 /V s). This result indicates the importance of spinning speed in the fabrication of solution processed organic thin film transistors by spin coating.

  20. Growth and magnetic properties dependence of the Co–Cu/Cu films electrodeposited under high magnetic fields

    Franczak, Agnieszka, E-mail: agnieszka.franczak@mtm.kuleuven.be [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); Department of Materials Science (MTM), KU Leuven, Kasteelpark Arenberg 44, 3001 Haverlee (Leuven) (Belgium); Levesque, Alexandra [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); Zabinski, Piotr [Laboratory of Physical Chemistry and Electrochemistry, Faculty of Non-Ferrous Metals, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Li, Donggang [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, 314 Box, 110004 Shenyang (China); Czapkiewicz, Maciej [Department of Electronics, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Kowalik, Remigiusz [Laboratory of Physical Chemistry and Electrochemistry, Faculty of Non-Ferrous Metals, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Bohr, Frédéric [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); and others

    2015-07-15

    The present work is focused on the investigations of magnetic properties dependence on microstructure of Co–Cu/Cu films electrodeposited under superimposed high magnetic field. The experimental results indicate a strong effect of an external magnetic field on the morphology of deposited films, more precisely on the Co:Cu ratio that determines the film growth. It is shown that the Co–Cu/Cu films electrodeposited without superimposed magnetic field consisted of two clearly visible features: compact film with incorporated granular particles. Under a superimposed external high magnetic field the privilege growth of the particles was induced. As a consequence, development of the well-defined branched structure of Co–Cu/Cu film was observed. In contrary, the phase compositional investigations do not reveal any changes in the phase formation during electrodeposition under magnetic field conditions. Thus, it is assumed that a strong growth of Co–Cu/Cu films in (111) direction under magnetic or non-magnetic electrodeposition conditions is related with the growth of Cu (111) plane and embedded into it some of the Co fcc atoms of same (111) orientation, as well as the Co hcp atoms that grows in the (002) direction. This non-equilibrium growth of Co–Cu/Cu films under magnetic deposition conditions affects strongly the magnetic properties of deposited films, revealing that films obtained under magnetic fields higher than 3 T were no more magnetic materials. - Highlights: • Co–Cu/Cu electrodeposits were obtained at elevated temperature under HMFs. • The effects of HMFs on microstructure and magnetic properties were investigated. • Interesting morphological changes due to HMFs has been observed. • Changes in Co:Cu ratio due to HMFs modified the magnetic properties of deposits.

  1. Growth and magnetic properties dependence of the Co–Cu/Cu films electrodeposited under high magnetic fields

    Franczak, Agnieszka; Levesque, Alexandra; Zabinski, Piotr; Li, Donggang; Czapkiewicz, Maciej; Kowalik, Remigiusz; Bohr, Frédéric

    2015-01-01

    The present work is focused on the investigations of magnetic properties dependence on microstructure of Co–Cu/Cu films electrodeposited under superimposed high magnetic field. The experimental results indicate a strong effect of an external magnetic field on the morphology of deposited films, more precisely on the Co:Cu ratio that determines the film growth. It is shown that the Co–Cu/Cu films electrodeposited without superimposed magnetic field consisted of two clearly visible features: compact film with incorporated granular particles. Under a superimposed external high magnetic field the privilege growth of the particles was induced. As a consequence, development of the well-defined branched structure of Co–Cu/Cu film was observed. In contrary, the phase compositional investigations do not reveal any changes in the phase formation during electrodeposition under magnetic field conditions. Thus, it is assumed that a strong growth of Co–Cu/Cu films in (111) direction under magnetic or non-magnetic electrodeposition conditions is related with the growth of Cu (111) plane and embedded into it some of the Co fcc atoms of same (111) orientation, as well as the Co hcp atoms that grows in the (002) direction. This non-equilibrium growth of Co–Cu/Cu films under magnetic deposition conditions affects strongly the magnetic properties of deposited films, revealing that films obtained under magnetic fields higher than 3 T were no more magnetic materials. - Highlights: • Co–Cu/Cu electrodeposits were obtained at elevated temperature under HMFs. • The effects of HMFs on microstructure and magnetic properties were investigated. • Interesting morphological changes due to HMFs has been observed. • Changes in Co:Cu ratio due to HMFs modified the magnetic properties of deposits

  2. An analytical expression of electric potential and field of organic thin film transistors

    Pankalla, S; Glesner, M

    2012-01-01

    The two-dimensional electric potential and field of an organic thin-film transistor (OTFT) is derived by conformal mapping using the Schwarz-Christoffel-transformation of the Poisson equation. In this paper we compare this analytical closed-form solution to field simulation results from Silvaco TCAD. Inter alia the potential close to the surface is calculated and we found excellent accordance to the numerical simulations and thus proofed its usability for charge transport calculations. Thus, it is used for calculation of the drain-source-current in the channel.

  3. Electromagnetic microwaves in metal films with electron-phonon interaction and a dc magnetic field

    Hasselberg, L.E.

    1976-01-01

    A quantum-mechanical treatment of electromagnetic microwaves is performed for a metal film. The directions of the exterior ac and dc fields are taken to be arbitrary and boundary conditions for the electrons are assumed to be specular. The relation between the current and the electromagnetic field...... in the transmission spectrum can perhaps be obtained by assuming a finite Debye temperature and specular reflections of the electrons at the boundary surfaces. A sharp peak entirely caused by the finite electron-phonon interaction is also discussed....

  4. Diffraction of stochastic electromagnetic fields by a hole in a thin film with real optical properties

    Dorofeyev, Illarion

    2008-08-01

    The classical Kirchhoff theory of diffraction is extended to the case of real optical properties of a screen and its finite thickness. A spectral power density of diffracted electromagnetic fields by a hole in a thin film with real optical properties was calculated. The problem was solved by use of the vector Green theorems and related Green function of the boundary value problem. A spectral and spatial selectivity of the considered system was demonstrated. Diffracted patterns were calculated for the coherent and incoherent incident fields in case of holes array in a screen of perfect conductivity.

  5. Diffraction of stochastic electromagnetic fields by a hole in a thin film with real optical properties

    Dorofeyev, Illarion

    2008-01-01

    The classical Kirchhoff theory of diffraction is extended to the case of real optical properties of a screen and its finite thickness. A spectral power density of diffracted electromagnetic fields by a hole in a thin film with real optical properties was calculated. The problem was solved by use of the vector Green theorems and related Green function of the boundary value problem. A spectral and spatial selectivity of the considered system was demonstrated. Diffracted patterns were calculated for the coherent and incoherent incident fields in case of holes array in a screen of perfect conductivity

  6. Magnetic fields are causing small, but significant changes of the radiochromic EBT3 film response to 6 MV photons.

    Delfs, Björn; Schoenfeld, Andreas A; Poppinga, Daniela; Kapsch, Ralf-Peter; Jiang, Ping; Harder, Dietrich; Poppe, Björn; Looe, Hui Khee

    2018-01-31

    The optical density (OD) of EBT3 radiochromic films (Ashland Specialty Ingredients, Bridgewater, NJ, USA) exposed to absorbed doses to water up to D  =  20 Gy in magnetic fields of B  =  0.35 and 1.42 T was measured in the three colour channels of an Epson Expression 10000XL flatbed scanner. A 7 cm wide water phantom with fixed film holder was placed between the pole shoes of a constant-current electromagnet with variable field strength and was irradiated by a 6 MV photon beam whose axis was directed at right angles with the field lines. The doses at the film position at water depth 5 cm were measured with a calibrated ionization chamber when the magnet was switched off and were converted to the doses in presence of the magnetic field via the monitor units and by a Monte Carlo-calculated correction accounting for the slight change of the depth dose curves in magnetic fields. In the presence of the 0.35 and 1.42 T fields small negative changes of the OD values at given absorbed doses to water occurred and just significantly exceeded the uncertainty margin given by the stochastic and the uncorrected systematic deviations. This change can be described by a  +2.1% change of the dose values needed to produce a given optical density in the presence of a 1.42 T field. The thereby modified OD versus D function remained unchanged irrespective of whether the original short film side-the preference direction of the monomer crystals of the film-was directed parallel or orthogonal to the magnetic field. The 'orientation effect', the difference between the optical densities measured in the 'portrait' or 'landscape' film positions on the scanner bed caused by the reflection of polarised light in the scanner's mirror system, remained unaltered after EBT3 film exposure in magnetic fields. An independent optical bench investigation of EBT3 films exposed to doses of 10 and 20 Gy at 0.35 and 1.42 T showed that the direction of the electric vector of polarised

  7. Magnetic field induced superconductor-insulator transitions for ultra-thin Bi films on the different underlayers

    Makise, K; Kawaguti, T; Shinozaki, B

    2009-01-01

    This work shows the experimental results of the superconductor-insulator (S-I) transition for ultra-thin Bi films in magnetic fields. The quench-condensed (q-c) Bi film onto insulating underlayers have been interpreted to be homogeneous. In contrast, the Bi film without underlayers has been regarded as a granular film. The electrical transport properties of ultra-thin metal films near the S-I transition depend on the structure of the film. In order to confirm the effect of the underlayer to the homogeneity of the superconducting films, we investigate the characteristics of S-I transitions of q-c nominally homogeneous Bi films on underlayers of two insulating materials, SiO, and Sb. Under almost the same deposition condition except for the material of underlayer, we prepared the Bi films by repeating the additional deposition and performed in-situ electrical measurement. It is found that the transport properties near the S-I transitions show the remarkable difference between two films on different underlayers. As for Bi films on SiO, it turned out that the temperature dependence of resistance per square R sq (T) of the field-tuned transition and the thickness-tuned transition shows similar behavior; it was a thermally activated form. On the other hand, the R sq (T) of Bi films on Sb for thickness-tuned S-I transition showed logarithmic temperature dependence, but that for field-tuned S-I transition showed a thermally activated form.

  8. Piezoelectric response of a PZT thin film to magnetic fields from permanent magnet and coil combination

    Guiffard, B.; Seveno, R. [Universite de Nantes, Lunam Universite, IETR UMR CNRS 6164, Nantes (France)

    2014-07-10

    In this study, we report the magnetically induced electric field E{sub 3} in Pb(Zr{sub 0.57}Ti{sub 0.43})O{sub 3} (PZT) thin films, when they are subjected to both dynamic magnetic induction (magnitude B{sub ac} at 45 kHz) and static magnetic induction (B{sub dc}) generated by a coil and a single permanent magnet, respectively. It is found that highest sensitivity to B{sub dc} - Δ vertical stroke E{sub 3} vertical stroke ΔB{sub dc} - is achieved for the thin film with largest effective electrode. This magnetoelectric (ME) effect is interpreted in terms of coupling between eddy current-induced Lorentz forces (stress) in the electrodes of PZT and piezoelectricity. Such coupling was evidenced by convenient modelling of experimental variations of electric field magnitude with both B{sub ac} and B{sub dc} induction magnitudes, providing imperfect open circuit condition was considered. Phase angle of E{sub 3} versus B{sub dc} could also be modelled. At last, the results show that similar to multilayered piezoelectric-magnetostrictive composite film, a PZT thin film made with a simple manufacturing process can behave as a static or dynamic magnetic field sensor. In this latter case, a large ME voltage coefficient of α = vertical stroke E{sub 3} vertical stroke /B{sub ac} = 3.55 V/cm Oe under B{sub dc} = 0.3 T was found. All these results may provide promising low-cost magnetic energy harvesting applications with microsized systems. (orig.)

  9. Development of radiochromic film for spatially quantitative dosimetric analysis of indirect ionizing radiation fields

    Brady, Samuel Loren

    sensors measured film parallel with axis of light source translation). The EPSON 10000XL demonstrated slightly better light source/CCD temporal stability and provided a capacity to scan larger film formats at the center of the scanner in landscape mode. However, the EPSON V700 only measured an overall difference in accuracy and precision by 2%, and though smaller in size, at the time of this work, was one sixth the cost of the 10000XL. A scan protocol was developed to maximize RCF digitization accuracy and precision, and a calibration fitting function was developed for RCF absolute dosimetry. The fitting function demonstrated a superior goodness of fit for both RCF types over a large range of absorbed dose levels as compared to the currently accepted function found in literature. The RCF dosimetry system was applied to three novel areas from which a benefit could be derived for 2D or 3D dosimetric information. The first area was for a 3D dosimetry of a pendant breast in 3D-CT mammography. The novel method of developing a volumetric image of the breast from a CT acquisition technique was empirically measured for its dosimetry and compared to standard dual field digital mammography. The second area was dose reduction in CT for pediatric and adult scan protocols. In this application, novel methodologies were developed to measure 3D organ dosimetry and characterize a dose reduction scan protocol for pediatric and adult body habitus. The third area was in the field of small animal irradiation for radiobiology purposes and cancer patient treatment verification. In every case, the RCF dosimetry system was verified for accuracy using a traditional PDD as the golden standard. When considering all areas of radiation energy applications, the RCF dosimetry system agreed to better than 7% of the golden standard, and in some cases within better than 1%. In many instances, this work provided vital dosimetric information that otherwise was not captured using the PDD in similar geometry

  10. Influence Of The Switching field On The Magnetization Process Thin Film Magneto optic

    Atmono, Tri Mardji

    1996-01-01

    The investigation of influence of switching field on the magnetic reversal process of bilayer Fe Tb/FeTbCo has been done. Thin film has been produced by sputtering method using mosaic target placed as cathode. The experiment shows that the interface wall between two layers is created due to the shifting of the switching field from the coercive force of the single layer. At the temperature of 26 o C, the special magnetization process accurst because the two layers have the same value of switching field : For the range of the magnetic field -3.8 kg o C o C. This mean that the compensation point lies in this temperature range

  11. Applied magnetic field angle dependence of the static and dynamic magnetic properties in FeCo films during the deposition

    Cao, Derang; Zhu, Zengtai; Feng, Hongmei; Pan, Lining; Cheng, Xiaohong; Wang, Zhenkun [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Wang, Jianbo [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Key Laboratory of Special Function Materials and Structure Design, Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Liu, Qingfang, E-mail: liuqf@lzu.edu.cn [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China)

    2016-10-15

    FeCo films were prepared by a simple and convenient electrodeposition method. An external magnetic field was applied to the film to induce magnetic anisotropy during deposition. Comparing with the previous work, the angle between the direction of applied magnetic field and film plane is changed from in-plane to out-plane. The influence of the applied magnetic field on magnetic properties was investigated. As a result, it can be found that the in-plane anisotropy is driven by the in-plane component of the magnetic field applied during growth. In addition, the result can also be confirmed by the dynamic magnetic anisotropy of the film obtained by vector network analyzer ferromagnetic resonance technique. - Highlights: • FeCo films were prepared by electrodeposition method. • An external magnetic field was applied to induce anisotropy during deposition. • The direction of applied magnetic field is changed from in-plane to out-plane. • The magnetic properties of films were investigated by vector network analyzer. • The in-plane anisotropy is driven by the in-plane component of the field.

  12. Low field critical currents and ac losses of thin film niobium--tin superconductors

    Howard, R.E.

    1977-01-01

    The results of a study of the low field critical current and ac loss properties of niobium-tin thin films and layered composites fabricated by electron-beam coevaporation are presented. Particular emphasis is placed upon determining the suitability of this material for use as a conductor in a superconducting power transmission line. Chapter I contains a summary of this work and its major results together with an introduction to the scientific and engineering concepts associated with a superconducting power transmission line. Chapter II is a discussion of the physics of current transport and the associated loss mechanisms in a type-II superconductor. Chapter III gives the details of the electron-beam coevaporation technique developed to fabricate the samples for this study. Also discussed in this chapter are the effects of the evaporation conditions on the growth morphology of the niobium-tin films. Chapter IV presents the details of the experimental techniques developed to measure the ac loss and critical current in these samples as a function of temperature. Chapter V shows the dependence of the critical current of these films and composites on temperature, magnetic field, and on the number of artificially introduced pinning centers in the layered composites. Experimental results are also presented concerning the stability of these conductors against flux jumps. Chapter VI is a discussion of the ac losses in these samples. Detailed comparisons are made between the measured loss and the predictions of the critical state model

  13. High magnetoresistance at low magnetic fields in self-assembled ZnO-Co nanocomposite films.

    Jedrecy, N; Hamieh, M; Hebert, C; Perriere, J

    2017-07-27

    The solid phase growth of self-assembled nanocrystals embedded in a crystalline host matrix opens up wide perspectives for the coupling of different physical properties, such as magnetic and semiconducting. In this work, we report the pulsed laser growth at room temperature of thin films composed of a dispersed array of ferromagnetic Co (0001) nanoclusters with an in-plane mono-size width of 1.3 nm, embedded in a ZnO (0001) crystalline matrix. The as-grown films lead to very high values of magnetoresistance, ranging at 9 T from -11% at 300 K to -19% at 50 K, with a steep decrease of the magnetoresistance at low magnetic fields. We establish the relationship between the magnetoresistance behavior and the magnetic response of the Co nanocluster assembly. A spin-dependent tunneling of the electrons between the Co nanoclusters through and by the semi-insulating ZnO host is achieved in our films, promising with regard to magnetic field sensors or Si-integrated spintronic devices. The effects of thermal annealing are also discussed.

  14. Influence of interdiffusion on the magnetic properties of Co/Si (100) films after high magnetic field annealing

    Zhao, Yue; Wang, Kai; Wang, Qiang; Li, Guojian; Lou, Changsheng; Pang, Hongxuan; He, Jicheng

    2015-01-01

    The influence of interdiffusion on the magnetic properties of Co/Si (100) films after thermal annealing in the presence of a strong magnetic field was investigated. The interdiffusion coefficients of films that were annealed at temperatures of 380 °C and 420 °C in the presence of high magnetic fields were not affected. However, the interdiffusion coefficient of films annealed at 400 °C in the presence of a high magnetic field decreased significantly. The change in the interdiffusion coefficient, caused by high magnetic field annealing, increased the content of the magnetic phase. This increase in the magnetic phase improved the saturation magnetization. A new method of high magnetic field annealing is presented that can modulate the diffusion and magnetic properties of thin films. - Highlights: • Interdiffusion of Co/Si (100) films by high magnetic field annealing was studied. • Thickness of the diffusion layer was reduced by magnetic field annealing at 400 °C. • Interdiffusion coefficient decreased following magnetic field annealing at 400 °C. • Saturation magnetization increased after high magnetic field annealing at 400 °C

  15. Light field intensification induced by nanoinclusions in optical thin-films

    Zhu Zhiwu; Cheng Xiangai; Huang Liangjin; Liu Zejin

    2012-01-01

    Inclusions even in tens of nanometers scale (nanoinclusion) can cause electric field intensifications locally in an optical thin-film when irradiated by laser. It was modeled by using finite element analysis, and the dependences of local light field on complex refractive index, diameter and embedded depth of the nanoinclusion were simulated. In addition, the average light intensity inside the nanodefect was calculated as well as the energy deposition rate. The modeling results show that extinction coefficient of a nanoinclusion has more significant effects on local light field than real part of the refractive index. A light intensification as large as 4× can occur owing to a metallic nanoinclusion and the peaks of electric field distribution locating on the boundary of the particulate. Energy deposition rate, reflecting the behavior of laser induced damage to the thin-film, is found to have the highest value at a certain extinction coefficient, instead of the state that, for a defect, a higher extinction coefficient causes a higher speed of laser absorption. And when this coefficient is relatively small, the energy deposition rate grows linearly with it. Finally, regarding high absorptive nanoinclusions, the larger can induce stronger laser intensification and higher average of energy deposition rate, whereas no significant difference is made by low absorptive nanoinclusions of different sizes.

  16. Spatially Multiplexed Micro-Spectrophotometry in Bright Field Mode for Thin Film Characterization

    Valerio Pini

    2016-06-01

    Full Text Available Thickness characterization of thin films is of primary importance in a variety of nanotechnology applications, either in the semiconductor industry, quality control in nanofabrication processes or engineering of nanoelectromechanical systems (NEMS because small thickness variability can strongly compromise the device performance. Here, we present an alternative optical method in bright field mode called Spatially Multiplexed Micro-Spectrophotometry that allows rapid and non-destructive characterization of thin films over areas of mm2 and with 1 μm of lateral resolution. We demonstrate an accuracy of 0.1% in the thickness characterization through measurements performed on four microcantilevers that expand an area of 1.8 mm2 in one minute of analysis time. The measured thickness variation in the range of few tens of nm translates into a mechanical variability that produces an error of up to 2% in the response of the studied devices when they are used to measure surface stress variations.

  17. A rapidly equilibrating, thin film, passive water sampler for organic contaminants; characterization and field testing.

    St George, Tiffany; Vlahos, Penny; Harner, Tom; Helm, Paul; Wilford, Bryony

    2011-02-01

    Improving methods for assessing the spatial and temporal resolution of organic compound concentrations in marine environments is important to the sustainable management of our coastal systems. Here we evaluate the use of ethylene vinyl acetate (EVA) as a candidate polymer for thin-film passive sampling in waters of marine environments. Log K(EVA-W) partition coefficients correlate well (r(2) = 0.87) with Log K(OW) values for selected pesticides and polychlorinated biphenyls (PCBs) where Log K(EVA-W) = 1.04 Log K(OW) + 0.22. EVA is a suitable polymer for passive sampling due to both its high affinity for organic compounds and its ease of coating at sub-micron film thicknesses on various substrates. Twelve-day field deployments were effective in detecting target compounds with good precision making EVA a potential multi-media fugacity meter. Published by Elsevier Ltd.

  18. Probing the local microwave properties of superconducting thin films by a scanning microwave near-field microscope

    Wu, L Y; Wang, K L; Jiang, T; Kang, L; Yang, S Z; Wu, P H

    2002-01-01

    In this paper, we present our approach to probe the local microwave properties of superconducting thin films by using the microwave near-field scanning technique. We have employed a coaxial cavity together with a niobium tip as the probe and established a scanning sample stage cooled by liquid nitrogen to study thin film devices at low temperature in our scanning microwave near-field microscope. Nondestructive images have been obtained on the inhomogeneity of the YBaCuO superconducting thin films at microwave frequency. We believe that these results would be helpful in evaluating the microwave performance of the devices.

  19. Impact of the initial streamwise inclination of a double jet emitted within a cool crossflow on its temperature field and pollutants dispersion

    Radhouane, A.; Mahjoub Said, Nejla; Mhiri, H. [Ecole Nationale d' Ingenieurs de Monastir, Unite de Thermique et Thermodynamique des Procedes Industriels, Monastir (Tunisia); Palec, G. le; Bournot, P. [IUSTI, UMR 6595, Technopole de Chateau-Gombert, Marseille (France)

    2009-04-15

    An experimental study and a numerical modeling are carried out simultaneously on a twin inclined jets' configuration issuing into a cooler crossflow. The main purpose of this study is to track the overall evolution of the jets among the surrounding flow and then determine the thermal and mass transfer features that characterize the resulting flowfield. The experimental data are depicted by means of a particle image velocimetry technique; whereas the numerical three-dimensional model is simulated through the resolution of the different governing Navier-Stokes' equations by means of the finite volume method. Two different closure models were tested: the standard k-{epsilon} model and the Reynolds stress model (RSM) second order model. The introduction of the latter in such a configuration brings some valuable improvement since it allows the detection of the slightest variations within the domain and then describes the least occurring mechanisms. The confrontation of the differently processed numerical results with the experimentally tracked data comforted our opinion since it proved the better efficiency of the RSM model for the description of the handled flow; that's why we adopted it for the rest of the paper. Once the validation obtained, we proceeded to the evaluation of the influence of the initial streamwise inclination of the emitted jets on the engendered thermal field and on the pollutants' dispersion. For the matter, we tested the following angles: 30 , 45 , 60 and 90 . After that, we represented the temperature variation along different directions in order to detail its behavior in all of them and at different levels. This characterization is highly recommended since it may promote the efficiency of several applications (mainly the cooling applications). We also evaluated the influence of this same parameter; the initial inclination; on the pollutants' dispersion due to the high and alarming importance of the problem on the

  20. Influence of high-energy electron irradiation on field emission properties of multi-walled carbon nanotubes (MWCNTs) films

    Patil, Sandip S. [Center for Advanced Studies in Material Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Koinkar, Pankaj M. [Center for International Cooperation in Engineering Education (CICEE), University of Tokushima, 2-1 Minami-Josanjima-Cho, Tokushima 770-8506 (Japan); Dhole, Sanjay D. [Center for Advanced Studies in Material Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); More, Mahendra A., E-mail: mam@physics.unipune.ac.i [Center for Advanced Studies in Material Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Murakami, Ri-ichi, E-mail: murakami@me.tokushima-u.ac.j [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-Josanjima-Cho, Tokushima 770-8506 (Japan)

    2011-04-15

    The effect of very high energy electron beam irradiation on the field emission characteristics of multi-walled carbon nanotubes (MWCNTs) has been investigated. The MWCNTs films deposited on silicon (Si) substrates were irradiated with 6 MeV electron beam at different fluence of 1x10{sup 15}, 2x10{sup 15} and 3x10{sup 15} electrons/cm{sup 2}. The irradiated films were characterized using scanning electron microscope (SEM) and micro-Raman spectrometer. The SEM analysis clearly revealed a change in surface morphology of the films upon irradiation. The Raman spectra of the irradiated films show structural damage caused by the interaction of high-energy electrons. The field emission studies were carried out in a planar diode configuration at the base pressure of {approx}1x10{sup -8} mbar. The values of the threshold field, required to draw an emission current density of {approx}1 {mu}A/cm{sup 2}, are found to be {approx}0.52, 1.9, 1.3 and 0.8 V/{mu}m for untreated, irradiated with fluence of 1x10{sup 15}, 2x10{sup 15} and 3x10{sup 15} electrons/cm{sup 2}. The irradiated films exhibit better emission current stability as compared to the untreated film. The improved field emission properties of the irradiated films have been attributed to the structural damage as revealed from the Raman studies.

  1. Results of a cross-sectional study on the association of electromagnetic fields emitted from mobile phone base stations and health complaints

    Breckenkamp, Juergen; Berg-Beckhoff, Gabriele; Reis, Ursula; Potthoff, Peter

    2010-01-01

    Background: Despite the fact that adverse health effects are not confirmed for exposure to radiofrequency electromagnetic field (RFEMF) levels below the limit values, as defined in the guidelines of the International Commission on Non-Ionizing Radiation Protection, many persons are worried about possible adverse health effects caused by the RF-EMF emitted from mobile phone base stations, or they attribute their unspecific health complaints like headache or sleep disturbances to these fields. Method: In the framework of a cross-sectional study a questionnaire was sent to 4150 persons living in predominantly urban areas. Participants were asked whether base stations affected their health. Health complaints were measured with standardized health questionnaires for sleep disturbances, headache, health complaints and mental and physical health. 3,526 persons responded (85%) to the questionnaire and 1,808 (51%) agreed to dosimetric measurements in their flats. Exposure was measured in 1,500 flats. Results: The measurements accomplished in the bedrooms in most cases showed very low exposure values, most often below sensitivity limit of the dosimeter. An association of exposure with the occurrence of health complaints was not found, but an association between the attribution of adverse health effects to base stations and the occurrence of health complaints. Conclusions: However, concerns about health and the attribution of adverse health effects to these mobile phone base stations should be taken serious and require a risk communication with concerned persons. Future research should focus on the processes of perception and appraisal of RF-EMF risks, and ascertain the determinants of concerns and attributions in the context of RF-EMF. (orig.)

  2. Defect characterization and magnetic properties in un-doped ZnO thin film annealed in a strong magnetic field

    Ning, Shuai; Zhan, Peng; Wang, Wei-Peng; Li, Zheng-Cao; Zhang, Zheng-Jun

    2014-12-01

    Highly c-axis oriented un-doped zinc oxide (ZnO) thin films, each with a thickness of ~ 100 nm, are deposited on Si (001) substrates by pulsed electron beam deposition at a temperature of ~ 320 °C, followed by annealing at 650 °C in argon in a strong magnetic field. X-ray photoelectron spectroscopy (XPS), positron annihilation analysis (PAS), and electron paramagnetic resonance (EPR) characterizations suggest that the major defects generated in these ZnO films are oxygen vacancies. Photoluminescence (PL) and magnetic property measurements indicate that the room-temperature ferromagnetism in the un-doped ZnO film originates from the singly ionized oxygen vacancies whose number depends on the strength of the magnetic field applied in the thermal annealing process. The effects of the magnetic field on the defect generation in the ZnO films are also discussed.

  3. Defect characterization and magnetic properties in un-doped ZnO thin film annealed in a strong magnetic field

    Ning Shuai; Zhan Peng; Wang Wei-Peng; Li Zheng-Cao; Zhang Zheng-Jun

    2014-01-01

    Highly c-axis oriented un-doped zinc oxide (ZnO) thin films, each with a thickness of ∼ 100 nm, are deposited on Si (001) substrates by pulsed electron beam deposition at a temperature of ∼ 320 °C, followed by annealing at 650 °C in argon in a strong magnetic field. X-ray photoelectron spectroscopy (XPS), positron annihilation analysis (PAS), and electron paramagnetic resonance (EPR) characterizations suggest that the major defects generated in these ZnO films are oxygen vacancies. Photoluminescence (PL) and magnetic property measurements indicate that the room-temperature ferromagnetism in the un-doped ZnO film originates from the singly ionized oxygen vacancies whose number depends on the strength of the magnetic field applied in the thermal annealing process. The effects of the magnetic field on the defect generation in the ZnO films are also discussed. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  4. An Ensemble Learning for Predicting Breakdown Field Strength of Polyimide Nanocomposite Films

    Hai Guo

    2015-01-01

    Full Text Available Using the method of Stochastic Gradient Boosting, ten SMO-SVR are constructed into a strong prediction model (SGBS model that is efficient in predicting the breakdown field strength. Adopting the method of in situ polymerization, thirty-two samples of nanocomposite films with different percentage compositions, components, and thicknesses are prepared. Then, the breakdown field strength is tested by using voltage test equipment. From the test results, the correlation coefficient (CC, the mean absolute error (MAE, the root mean squared error (RMSE, the relative absolute error (RAE, and the root relative squared error (RRSE are 0.9664, 14.2598, 19.684, 22.26%, and 25.01% with SGBS model. The result indicates that the predicted values fit well with the measured ones. Comparisons between models such as linear regression, BP, GRNN, SVR, and SMO-SVR have also been made under the same conditions. They show that CC of the SGBS model is higher than those of other models. Nevertheless, the MAE, RMSE, RAE, and RRSE of the SGBS model are lower than those of other models. This demonstrates that the SGBS model is better than other models in predicting the breakdown field strength of polyimide nanocomposite films.

  5. Effect of pre-drying treatments on solution-coated organic thin films for active-matrix organic light-emitting diodes

    Shin, Dongkyun; Hong, Ki-Young; Park, Jongwoon

    2017-12-01

    Due to capillary rise, organic thin films fabricated by solution coating exhibit the concave thickness profile. It is found that the thickness and emission uniformities within pixels vary depending sensitively on the pre-drying treatment that has been done before hard bake. We investigate its effect on the film quality by varying the temperature, time, pressure, fluid flow-related solute concentration, and evaporation-related solvent. To this end, we carry out spin coatings of a non-aqueous poly(N-vinylcarbazole) (PVK) for a hole transporting blanket layer. With a low-boiling-point (BP) organic solvent, the pre-drying makes no significant impact on the thickness profiles. With a high-BP organic solvent, the PVK films pre-dried in a vacuum for a sufficient time exhibit very uniform light emission in the central region, but non-emission phenomenon near the perimeter of pixels. It is addressed that such a non-emission phenomenon can be suppressed to some extent by decreasing the vacuum pressure. However, the rapid evaporation by heat conduction during the pre-drying degrades the thickness uniformity due to a rapid microflow of solute from the edge to the center. No further enhancement in the thickness uniformity is obtained by varying the solute concentration and using a mixture of low- and high-BP solvents.

  6. Growth and giant coercive field of spinel-structured Co3- x Mn x O4 thin films

    Kwak, Yongsu; Song, Jonghyun; Koo, Taeyeong

    2016-08-01

    We grew epitaxial thin films of CoMn2O4 and Co2MnO4 on Nb-doped SrTiO3(011) and SrTiO3(001) single crystal substrates using pulsed laser deposition. The magnetic Curie temperature ( T c ) of the Co2MnO4 thin films was ~176 K, which is higher than that of the bulk whereas CoMn2O4 thin films exhibited a value of T c (~151 K) lower than that of the bulk. For the Co2MnO4 thin films, the M - H loop showed a coercive field of ~0.7 T at 10 K, similar to the value for the bulk. However, the M -H loop of the CoMn2O4(0 ll) thin film grown on a Nb-doped SrTiO3(011) substrate exhibited a coercive field of ~4.5 T at 30 K, which is significantly higher than those of the Co2MnO4 thin film and bulk. This giant coercive field, only observed for the CoMn2O4(0 ll) thin film, can be attributed to the shape anisotropy and strong spin-orbit coupling.

  7. Jc enhancement by La-Al-O doping in Y-Ba-Cu-O films both in self-field and under magnetic field

    Xu, Yan; Suo, Hong-Li; Yue, Zhao

    2016-01-01

    a good epitaxial growth relationship with LAO. Compared with a pure YBCO film, the Jc value of a 5.0% LAO-doped sample is enhanced more than three times in self-field 77 K and seven times at 77 K and 1.5 T, respectively. These results indicate that LAO doping can effectively enhance the Jc of YBCO films...... toward YBCO. A series of YBCO films with different LAO doping contents was fabricated on LAO single-crystal substrates by metal organic deposition. We observed by X-ray diffractometer measurements and scanning electron microscopy observations that although a large amount of LAO is added, YBCO still keeps...

  8. Plastic-Film Mulching for Enhanced Water-Use Efficiency and Economic Returns from Maize Fields in Semiarid China.

    Zhang, Peng; Wei, Ting; Cai, Tie; Ali, Shahzad; Han, Qingfang; Ren, Xiaolong; Jia, Zhikuan

    2017-01-01

    Film mulch has gradually been popularized to increase water availability to crops for improving and stabilizing agricultural production in the semiarid areas of Northwest China. To find more sustainable and economic film mulch methods for alleviating drought stress in semiarid region, it is necessary to test optimum planting methods in same cultivation conditions. A field experiment was conducted during 2013 and 2014 to evaluate the effects of different plastic film mulch methods on soil water, soil temperature, water use efficiency (WUE), yield and revenue. The treatments included: (i) the control, conventional flat planting without plastic film mulch (CK); (ii) flat planting with maize rows (60 cm spacing) on plastic film mulch (70 cm wide); (iii) furrow planting of maize (60 cm spacing), separated by consecutive plastic film-mulched ridges (each 50 cm wide and 15 cm tall); (iv) furrow planting of maize (60 cm spacing), separated by alternating large and small plastic film-mulched ridges (large ridges: 70 cm wide and 15 cm tall, small ridges 50 cm wide and 10 cm tall); and (v) furrow-flat planting of maize (60 cm spacing) with a large plastic film-mulched ridge (60 cm wide and 15 cm tall) alternating with a flat without plastic film-mulched space (60 cm wide). Topsoil temperature (5-25 cm) was significantly ( p plastic film mulch than the control (CK), and resulted in greater soil water storage (0-200 cm) up to 40 days after planting. Maize grain yield and WUE were significantly ( p < 0.05) higher with the furrow planting methods (consecutive film-mulched ridges and alternating film-mulched ridges) than the check in both years. Maize yield was, on average, 29% ( p < 0.05) greater and 28% ( p < 0.05) greater with these furrow planting methods, while the average WUE increased by 22.8% ( p < 0.05) with consecutive film-mulched ridges and 21.1% ( p < 0.05) with alternating film-mulched ridges. The 2-year average net income increased by 1559, 528, and 350 Chinese Yuan

  9. Parallel critical magnetic fields of superconducting hyperthin films of vanadium and technetium

    Teplov, A.A.; Mikheeva, M.N.

    1980-01-01

    The nature of limiting parallel magnetic fields Hsub(c parallel) destroying a superconducting state in films of vanadium and technetium is found out. A dependence of Hsub(c parallel) on the thickness of films up to d approximately 60 A is studied. The |dHsub(c parallel)sup(2)/dT|sub(Tsub(c)) derivative, which increases in the region of large d with the increase of 1/d and achieves the maximum va;ue at d approximately 100 A, was determined, using the experimental data. For the most thin films this derivative tends to drop (the value of the derivative changes from 16 up to 20.00 kOe 2 /k and for technetium and from 4 up to 2100 kOe 2 /k for vanadium). Such stop at |dHsub(c11)sup(2)/ dT|sub(Tsub(c)) growth during the decrease of d is not explained in the framework of the theory taking into account only orbital effects. An account of the additional paramagnetic effect (spin effects) leads to a good agreement of the experiment with the theory in the whole range of thicknesses for vanadium. For technetium films in the d range <=110 A the value of Hsub(c parallel) exceeds several times Hsub(c parallel) calculated with provision of spin effects. For d approximately 80 A and d approximately 55 A this increase achieves the triple value. This effect is explained qualitatively by the spin-orbital scattering appearing with the increase of the atomic number

  10. Experiments and numerical modeling of fast flowing liquid metal thin films under spatially varying magnetic field conditions

    Narula, Manmeet Singh

    Innovative concepts using fast flowing thin films of liquid metals (like lithium) have been proposed for the protection of the divertor surface in magnetic fusion devices. However, concerns exist about the possibility of establishing the required flow of liquid metal thin films because of the presence of strong magnetic fields which can cause flow disrupting MHD effects. A plan is underway to design liquid lithium based divertor protection concepts for NSTX, a small spherical torus experiment at Princeton. Of these, a promising concept is the use of modularized fast flowing liquid lithium film zones, as the divertor (called the NSTX liquid surface module concept or NSTX LSM). The dynamic response of the liquid metal film flow in a spatially varying magnetic field configuration is still unknown and it is suspected that some unpredicted effects might be lurking. The primary goal of the research work being reported in this dissertation is to provide qualitative and quantitative information on the liquid metal film flow dynamics under spatially varying magnetic field conditions, typical of the divertor region of a magnetic fusion device. The liquid metal film flow dynamics have been studied through a synergic experimental and numerical modeling effort. The Magneto Thermofluid Omnibus Research (MTOR) facility at UCLA has been used to design several experiments to study the MHD interaction of liquid gallium films under a scaled NSTX outboard divertor magnetic field environment. A 3D multi-material, free surface MHD modeling capability is under development in collaboration with HyPerComp Inc., an SBIR vendor. This numerical code called HIMAG provides a unique capability to model the equations of incompressible MHD with a free surface. Some parts of this modeling capability have been developed in this research work, in the form of subroutines for HIMAG. Extensive code debugging and benchmarking exercise has also been carried out. Finally, HIMAG has been used to study the

  11. Aspects of 'low field' magnetotransport in epitaxial thin films of the ferromagnetic metallic oxide SrRuO3

    Moran, O.; Saldarriaga, W.; Baca, E.

    2007-01-01

    Epitaxial thin films of the conductive ferromagnetic oxide SrRuO 3 were grown on an (001) SrTiO 3 (STO) substrate by using DC sputtering technique. The magnetic and magnetoresistive properties of the films were measured by applying the magnetic field both perpendicular (out-of-plane) and parallel (in-plane) to the film plane and ever maintaining the direction of the applied field perpendicular to that of the transport current. The films grown on an (001) STO substrate showed identical magnetization properties in two orthogonal crystallographic directions of the substrate, [100] S and [001] S (in-plane and out-of-plane geometry), which suggests the presence of a multi domain structure within the plane of the film. For such samples, no anisotropic field (hard axis) along de [001]s direction, i.e., perpendicular to the film-plane could be detected. Nevertheless, a distinguishable temperature dependent out-of-plane anisotropic magnetoresistance (MR) along with strong temperature dependent low field hysteretic MR(H) behavior was detected for the studied films. A negative MR ratio MR(T)=[ρ(μ 0 H=9T; T)-ρ( μ 0 H=0T; T)]/ρ( μ 0 H=0T; T) on the order of a few percent, with maximums of ∼6% and ∼4% (right at the Curie temperature, T C ∼160K) was calculated for an in-plane and out-of plane measuring geometry, respectively. In addition there is an equally strong MR effect at low temperatures, which might be related to the temperature dependence of the magnetocrystalline anisotropy together with a magnetization rotation. Both the MR(T) behavior and the achieved values (except for T 3 films grown on 2 o miscut (001) STO substrates with the current parallel to the field and parallel to the [1-bar11] direction, which was identified as the easier axis for magnetization

  12. Ultraviolet light-absorbing and emitting diodes consisting of a p-type transparent-semiconducting NiO film deposited on an n-type GaN homoepitaxial layer

    Nakai, Hiroshi; Sugiyama, Mutsumi; Chichibu, Shigefusa F.

    2017-05-01

    Gallium nitride (GaN) and related (Al,Ga,In)N alloys provide practical benefits in the production of light-emitting diodes (LEDs) and laser diodes operating in ultraviolet (UV) to green wavelength regions. However, obtaining low resistivity p-type AlN or AlGaN of large bandgap energies (Eg) is a critical issue in fabricating UV and deep UV-LEDs. NiO is a promising candidate for useful p-type transparent-semiconducting films because its Eg is 4.0 eV and it can be doped into p-type conductivity of sufficiently low resistivity. By using these technologies, heterogeneous junction diodes consisting of a p-type transparent-semiconducting polycrystalline NiO film on an n-type single crystalline GaN epilayer on a low threading-dislocation density, free-standing GaN substrate were fabricated. The NiO film was deposited by using the conventional RF-sputtering method, and the GaN homoepitaxial layer was grown by metalorganic vapor phase epitaxy. They exhibited a significant photovoltaic effect under UV light and also exhibited an electroluminescence peak at 3.26 eV under forward-biased conditions. From the conduction and valence band (EV) discontinuities, the NiO/GaN heterointerface is assigned to form a staggered-type (TYPE-II) band alignment with the EV of NiO higher by 2.0 eV than that of GaN. A rectifying property that is consistent with the proposed band diagram was observed in the current-voltage characteristics. These results indicate that polycrystalline NiO functions as a hole-extracting and injecting layer of UV optoelectronic devices.

  13. Enhanced field emission characteristics of boron doped diamond films grown by microwave plasma assisted chemical vapor deposition

    Koinkar, Pankaj M. [Center for International Cooperation in Engineering Education (CICEE), University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan); Patil, Sandip S. [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Kim, Tae-Gyu [Department of Nano System and Process Engineering, Pusan National University, 50 Cheonghak-ri, Samrangjin-eup, Miryang, Gyeongnam, Pusan 627-706 (Korea, Republic of); Yonekura, Daisuke [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan); More, Mahendra A., E-mail: mam@physics.unipune.ac.in [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Joag, Dilip S. [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Murakami, Ri-ichi, E-mail: murakami@me.tokushima-u.ac.jp [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan)

    2011-01-01

    Boron doped diamond films were synthesized on silicon substrates by microwave plasma chemical vapor deposition (MPCVD) technique. The effect of B{sub 2}O{sub 3} concentration varied from 1000 to 5000 ppm on the field emission characteristics was examined. The surface morphology and quality of films were characterized by scanning electron microscope (SEM) and Raman spectroscopy. The surface morphology obtained by SEM showed variation from facetted microcrystal covered with nanometric grains to cauliflower of nanocrystalline diamond (NCD) particles with increasing B{sub 2}O{sub 3} concentration. The Raman spectra confirm the formation of NCD films. The field emission properties of NCD films were observed to improve upon increasing boron concentration. The values of the onset field and threshold field are observed to be as low as 0.36 and 0.08 V/{mu}m, respectively. The field emission current stability investigated at the preset value of {approx}1 {mu}A is observed to be good, in each case. The enhanced field emission properties are attributed to the better electrical conductivity coupled with the nanometric features of the diamond films.

  14. Technical Note: Magnetic field effects on Gafchromic-film response in MR-IGRT.

    Reynoso, Francisco J; Curcuru, Austen; Green, Olga; Mutic, Sasa; Das, Indra J; Santanam, Lakshmi

    2016-12-01

    Magnetokinetic changes may affect crystal orientation and polymerization within the active layer of radiochromic film (RCF). This effect is investigated in a magnetic resonance image-guided radiotherapy unit within the context of film dosimetry. Gafchromic EBT2 RCF was irradiated in a 30 × 30 × 30 cm 3 solid water phantom using a Co-60 MRI guided radiotherapy system (B = 0.35 T) under normal operating conditions, and under the exact conditions and setup without a magnetic field. Fifteen 20.3 × 25.4 cm 2 EBT2 film sheets were placed at three different depths (d = 0.5, 5, and 10 cm) using five different treatment plans. The plans were computed using the MRIdian (ViewRay, Inc.) treatment planning system to deliver doses between 0 and 17.6 Gy. Films were analyzed before and after irradiation to obtain the net optical density (netOD) for each color channel separately. Scanning electron microscope (SEM) images were obtained to compare the active layer of selected samples. The results indicated that the red channel netOD decreased between 0.013 and 0.123 (average of 0.060 ± 0.033) for doses above 2.8 Gy, with a linear increase in this effect for higher doses. Green channel netOD showed similar results with a decrease between 0.012 and 0.105 (average of 0.041 ± 0.027) for doses above 3.5 Gy. The blue channel showed the weakest effect with a netOD decrease between 0.013 and 0.029 (average of 0.020 ± 0.006) for doses above 8.0 Gy. SEM images show changes in crystal orientation within active layer in RCF exposed in a magnetic field. The presence of a magnetic field affects crystal orientation and polymerization during irradiation, where netOD decreased by an average of 8.7%, 8.0%, and 4.3% in the red, green, and blue channels, respectively. The under response was dependent on dose and differed by up to 15% at 17.6 Gy.

  15. Visualization of dielectric constant-electric field-temperature phase maps for imprinted relaxor ferroelectric thin films

    Frederick, J. C.; Kim, T. H.; Maeng, W.; Brewer, A. A.; Podkaminer, J. P.; Saenrang, W.; Vaithyanathan, V.; Schlom, D. G.; Li, F.; Chen, L.-Q.; Trolier-McKinstry, S.; Rzchowski, M. S.; Eom, C. B.

    2016-01-01

    The dielectric phase transition behavior of imprinted lead magnesium niobate–lead titanate relaxor ferroelectric thin films was mapped as a function of temperature and dc bias. To compensate for the presence of internal fields, an external electric bias was applied while measuring dielectric responses. The constructed three-dimensional dielectric maps provide insight into the dielectric behaviors of relaxor ferroelectric films as well as the temperature stability of the imprint. The transition temperature and diffuseness of the dielectric response correlate with crystallographic disorder resulting from strain and defects in the films grown on strontium titanate and silicon substrates; the latter was shown to induce a greater degree of disorder in the film as well as a dielectric response lower in magnitude and more diffuse in nature over the same temperature region. Strong and stable imprint was exhibited in both films and can be utilized to enhance the operational stability of piezoelectric devices through domain self-poling.

  16. Experimental study of the hysteresis in hydrogenated amorphous silicon thin-film transistors for an active matrix organic light-emitting diode

    Lee, Jae-Hoon; Shin, Kwang-Sub; Park, Joong-Hyun; Han, Min-Koo

    2006-01-01

    An experimental scheme for validating the cause of the hysteresis phenomenon in hydrogenated amorphous-silicon-thin-film transistors (a-Si:H TFTs) is reported. A different gate starting voltage to the desired gate voltage has been considered to prove an effect of filling an acceptor-like or donor-like state in the interface. The integration time of the semiconductor parameter analyzer has also been controlled to investigate the effect between the de-trapping rate and hysteresis. The experimental results show that the previous data voltage in the (n-1)th frame affects the OLED current in the (n)th frame.

  17. Field and power dependence of auto-oscillations in yttrium-iron-garnet films

    McMichael, R.D.; Wigen, P.E.

    1988-01-01

    The nonlinear response of the magnetic spin system in yttrium-iron-garnet (YIG) thin films to high-power ferromagnetic resonance (FMR) at perpendicular resonance was studied and the results are presented. A diagram of the regions of auto-oscillation of the system as a function of field and power is presented which shows the modes that appear in low-power FMR becoming unstable to auto-oscillations with increased power. The auto-oscillations exhibit periodic, quasiperiodic, period doubling, and chaotic behavior with typical frequencies in the MHz range. The domains of oscillatory behavior due to individual resonance modes are seen to merge and shift to lower fields as power is increased. Possible mechanisms for the behavior are proposed

  18. Bistability induced by crossed electric and magnetic fields in a nematic film

    Barbero, G.; Miraldi, E.; Oldano, C.

    1988-09-01

    The static distortions in a homogeneously aligned nematic liquid-crystal film in crossed electric and magnetic fields are theoretically analyzed. Both fields are orthogonal to the undistorted molecular alignment and destabilizing. In the limit of small distortions, a first-order transition between two distorted configurations, with bistability and hysteresis, is obtained if the dielectric anisotropy parameter 1-ɛ∥/ɛ⊥ is lower than the elastic anisotropy parameter (k3-k2)2/(4k1k2), where k1, k2, and k3 are the Frank elastic constants. This condition is satisfied by many commonly used nematic materials. At higher distortions an inversion point is found, above which the transition becomes of the second order. At this point a phenomenon similar to the critical opalescence of fluids is expected.

  19. Measurements of 3D velocity and scalar field for a film-cooled airfoil trailing edge

    Benson, Michael J.; Elkins, Christopher J.; Eaton, John K. [Stanford University, Department of Mechanical Engineering, Stanford, CA (United States)

    2011-08-15

    The 3D velocity and concentration fields have been measured for flow in a pressure side cutback trailing edge film cooling geometry consisting of rectangular film cooling slots separated by tapered lands. The velocity field was measured using conventional magnetic resonance velocimetry, and the concentration distribution was measured with a refined magnetic resonance concentration technique that yields experimental uncertainties for the concentration between 5 and 6%. All experiments were performed in water. A separation bubble behind the slot lip entrains coolant and promotes rapid turbulent mixing at the upper edge of the coolant jet. Vortices from inside the slot feed channel and on the upper sides of the lands rapidly distort the initially rectangular shape of the coolant stream and sweep mainstream flow toward the airfoil surface. The vortices also prevent any coolant from reaching the upper surfaces of the land. At the trailing edge, a second separation region exists in the blunt trailing edge wake. The flow forms suction side streaks behind the land tips, as well as streaks behind the slot centers on the pressure side. The peak coolant concentrations in the streaks remain above 25% through the end of the measurement domain, over 30 slot heights downstream. (orig.)

  20. Ultra-thin films of polysilsesquioxanes possessing 3-methacryloxypropyl groups as gate insulator for organic field-effect transistors

    Nakahara, Yoshio; Kawa, Haruna; Yoshiki, Jun; Kumei, Maki; Yamamoto, Hiroyuki; Oi, Fumio; Yamakado, Hideo; Fukuda, Hisashi; Kimura, Keiichi

    2012-01-01

    Polysilsesquioxanes (PSQs) possessing 3-methacryloxypropyl groups as an organic moiety of the side chain were synthesized by sol–gel condensation copolymerization of the corresponding trialkoxysilanes. The ultra-thin PSQ film with a radical initiator and a cross-linking agent was prepared by a spin-coating method, and the film was cured integrally at low temperatures of less than 120 °C through two different kinds of polymeric reactions, which were radical polymerization of vinyl groups and sol–gel condensation polymerization of terminated silanol and alkoxy groups. The obtained PSQ film showed the almost perfect solubilization resistance to acetone, which is a good solvent of PSQ before polymerization. It became clear by atomic force microscopy observation that the surface of the PSQ film was very smooth at a nano-meter level. Furthermore, pentacene-based organic field-effect transistor (OFET) with the PSQ film as a gate insulator showed typical p-channel enhancement mode operation characteristics and therefore the ultra-thin PSQ film has the potential to be applicable for solution-processed OFET systems. - Highlights: ► Polysilsesquioxanes (PSQs) possessing 3-methacryloxypropyl groups were synthesized. ► The ultra-thin PSQ film could be cured at low temperatures of less than 120 °C. ► The PSQ film showed the almost perfect solubilization resistance to organic solvent. ► The surface of the PSQ film was very smooth at a nano-meter level. ► Pentacene-based organic field-effect transistor with the PSQ film was fabricated.

  1. Ultra-thin films of polysilsesquioxanes possessing 3-methacryloxypropyl groups as gate insulator for organic field-effect transistors

    Nakahara, Yoshio; Kawa, Haruna [Department of Applied Chemistry, Faculty of Systems Engineering, Wakayama University, 930 Sakae-dani, Wakayama 640-8510 (Japan); Yoshiki, Jun [Division of Information and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology, 27-1 Mizumoto-cho, Muroran 050-8585 (Japan); Kumei, Maki; Yamamoto, Hiroyuki; Oi, Fumio [Konishi Chemical IND. Co., LTD., 3-4-77 Kozaika, Wakayama 641-0007 (Japan); Yamakado, Hideo [Department of Applied Chemistry, Faculty of Systems Engineering, Wakayama University, 930 Sakae-dani, Wakayama 640-8510 (Japan); Fukuda, Hisashi [Division of Engineering for Composite Functions, Faculty of Engineering, Muroran Institute of Technology, 27-1 Mizumoto-cho, Muroran 050-8585 (Japan); Kimura, Keiichi, E-mail: kkimura@center.wakayama-u.ac.jp [Department of Applied Chemistry, Faculty of Systems Engineering, Wakayama University, 930 Sakae-dani, Wakayama 640-8510 (Japan)

    2012-10-01

    Polysilsesquioxanes (PSQs) possessing 3-methacryloxypropyl groups as an organic moiety of the side chain were synthesized by sol-gel condensation copolymerization of the corresponding trialkoxysilanes. The ultra-thin PSQ film with a radical initiator and a cross-linking agent was prepared by a spin-coating method, and the film was cured integrally at low temperatures of less than 120 Degree-Sign C through two different kinds of polymeric reactions, which were radical polymerization of vinyl groups and sol-gel condensation polymerization of terminated silanol and alkoxy groups. The obtained PSQ film showed the almost perfect solubilization resistance to acetone, which is a good solvent of PSQ before polymerization. It became clear by atomic force microscopy observation that the surface of the PSQ film was very smooth at a nano-meter level. Furthermore, pentacene-based organic field-effect transistor (OFET) with the PSQ film as a gate insulator showed typical p-channel enhancement mode operation characteristics and therefore the ultra-thin PSQ film has the potential to be applicable for solution-processed OFET systems. - Highlights: Black-Right-Pointing-Pointer Polysilsesquioxanes (PSQs) possessing 3-methacryloxypropyl groups were synthesized. Black-Right-Pointing-Pointer The ultra-thin PSQ film could be cured at low temperatures of less than 120 Degree-Sign C. Black-Right-Pointing-Pointer The PSQ film showed the almost perfect solubilization resistance to organic solvent. Black-Right-Pointing-Pointer The surface of the PSQ film was very smooth at a nano-meter level. Black-Right-Pointing-Pointer Pentacene-based organic field-effect transistor with the PSQ film was fabricated.

  2. Magnetic anisotropy of thin sputtered MgB2 films on MgO substrates in high magnetic fields

    Savio Fabretti

    2014-03-01

    Full Text Available We investigated the magnetic anisotropy ratio of thin sputtered polycrystalline MgB2 films on MgO substrates. Using high magnetic field measurements, we estimated an anisotropy ratio of 1.35 for T = 0 K with an upper critical field of 31.74 T in the parallel case and 23.5 T in the perpendicular case. Direct measurements of a magnetic-field sweep at 4.2 K show a linear behavior, confirmed by a linear fit for magnetic fields perpendicular to the film plane. Furthermore, we observed a change of up to 12% of the anisotropy ratio in dependence of the film thickness.

  3. Effect of magnetic and electric coupling fields on micro- and nano- structure of carbon films in the CVD diamond process and their electron field emission property

    Wang, Yijia; Li, Jiaxin; Hu, Naixiu; Jiang, Yunlu; Wei, Qiuping; Yu, Zhiming; Long, Hangyu; Zhu, Hekang; Xie, Youneng; Ma, Li; Lin, Cheng-Te; Su, Weitao

    2018-03-01

    In this paper, both electric field and magnetic field were used to assist the hot filament chemical vapor deposition (HFCVD) and we systematically investigated the effects of which on the (1) phase composition, (2) grain size, (3) thickness and (4) preferred orientation of diamond films through SEM, Raman and XRD. The application of magnetic field in electric field, so called ‘the magnetic and electric coupling fields’, enhanced the graphitization and refinement of diamond crystals, slowed down the decrease of film thickness along with the increase of bias current, and suppressed diamond (100) orientation. During the deposition process, the electric field provided additional energy to HFCVD system and generated large number of energetic particles which might annihilate at the substrate and lose kinetic energy, while the Lorentz force, provided by magnetic field, could constrict charged particles (including electrons) to do spiral movement, which prolonged their moving path and life, thus the system energy increased. With the graphitization of diamond films intensified, the preferred orientation of diamond films completely evolved from (110) to (100), until the orientation and diamond phase disappeared, which can be attributed to (I) the distribution and concentration ratio of carbon precursors (C2H2 and CH3) and (II) graphitization sequence of diamond crystal facets. Since the electron field emission property of carbon film is sensitive to the phase composition, thickness and preferred orientation, nano- carbon cones, prepared by the negative bias current of 20 mA and magnetic field strength of 80 Gauss, exhibited the lowest turn-on field of 6.1 V -1 μm-1.

  4. Nitrogen-doped graphene films from simple photochemical doping for n-type field-effect transistors

    Li, Xinyu [College of Science, Guilin University of Technology, Guilin 541004 (China); Department of Physics and Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093 (China); Tang, Tao; Li, Ming, E-mail: liming928@163.com, E-mail: lixinyu5260@163.com [College of Science, Guilin University of Technology, Guilin 541004 (China); He, Xiancong, E-mail: liming928@163.com, E-mail: lixinyu5260@163.com [School of Materials Science and Engineering, Nanjing Institute of Technology, Nanjing 211167 (China)

    2015-01-05

    Highly nitrogen-doped GO (NGO) and n-type graphene field effect transistor (FET) have been achieved by simple irradiation of graphene oxide (GO) thin films in NH{sub 3} atmosphere. The electrical properties of the NGO film were performed on electric field effect measurements, and it displays an n-type FET behavior with a charge neutral point (Dirac point) located at around −8 V. It is suggested that the amino-like nitrogen (N-A) mainly contributes to the n-type behavior. Furthermore, compared to the GO film irradiated in Ar atmosphere, the NGO film is much more capable to improve the electrical conductivity. It may attribute to nitrogen doping and oxygen reduction, both of which can effectively enhance the electrical conductivity.

  5. Bias-enhanced post-treatment process for enhancing the electron field emission properties of ultrananocrystalline diamond films

    Saravanan, A.; Huang, B. R.; Sankaran, K. J.; Tai, N. H.; Dong, C. L.; Lin, I. N.

    2015-01-01

    The electron field emission (EFE) properties of ultrananocrystalline diamond films were markedly improved via the bias-enhanced plasma post-treatment (bep) process. The bep-process induced the formation of hybrid-granular structure of the diamond (bep-HiD) films with abundant nano-graphitic phase along the grain boundaries that increased the conductivity of the films. Moreover, the utilization of Au-interlayer can effectively suppress the formation of resistive amorphous-carbon (a-C) layer, thereby enhancing the transport of electrons crossing the diamond-to-Si interface. Therefore, bep-HiD/Au/Si films exhibit superior EFE properties with low turn-on field of E 0  = 2.6 V/μm and large EFE current density of J e  = 3.2 mA/cm 2 (at 5.3 V/μm)

  6. Elucidating source processes of N2O fluxes following grassland-to-field-conversion using isotopologue signatures of soil-emitted N2O

    Roth, G.; Giesemann, A.; Well, R.; Flessa, H.

    2012-04-01

    Conversion of grassland to arable land often causes enhanced nitrous oxide (N2O) emissions to the atmosphere. This is due to the tillage of the sward and subsequent decomposition of organic matter. Prediction of such effects is uncertain so far because emissions may differ depending on site and soil conditions. The processes of N2O turnover (nitrification, production by bacterial or fungal denitrifiers, bacterial reduction to N2) are difficult to identify, however. Isotopologue signatures of N2O such as δ18O, average δ15N (δ15Nbulk) and 15N site preference (SP = difference in δ15N between the central and peripheral N positions of the asymmetric N2O molecule) can be used to characterize N2O turnover processes using the known ranges of isotope effects of the various N2O pathways. We aim to evaluate the impact of grassland-to-field-conversion on N2O fluxes and the governing processes using isotopic signatures of emitted N2O. At two sites, in Kleve (North Rhine-Westphalia, Germany, conventional farming) and Trenthorst (Schleswig-Holstein, Germany, organic farming), a four times replicated plot experiment with (i) mechanical conversion (ploughing, maize), (ii) chemical conversion (broadband herbicide, maize per direct seed) and (iii) continuous grassland as reference was started in April 2010. In Trenthorst we additionally established a (iv) field with continuous maize cultivation as further reference. Over a period of two years, mineral nitrogen (Nmin) content was measured weekly on soil samples taken from 0-10 cm and 10-30 cm depth. Soil water content and N2O emissions were measured weekly as well. Gas samples were collected using a closed chamber system. Isotope ratio mass spectrometry was carried out on gas samples from selected high flux events to determine δ18O, δ15Nbulk and SP of N2O. δ18O and SP of N2O exhibited a relatively large range (32 to 72 ‰ and 6 to 34 ‰, respectively) indicating highly variable process dynamics. The data-set is grouped

  7. Enhancement and Tunability of Near-Field Radiative Heat Transfer Mediated by Surface Plasmon Polaritons in Thin Plasmonic Films

    Svetlana V. Boriskina

    2015-06-01

    Full Text Available The properties of thermal radiation exchange between hot and cold objects can be strongly modified if they interact in the near field where electromagnetic coupling occurs across gaps narrower than the dominant wavelength of thermal radiation. Using a rigorous fluctuational electrodynamics approach, we predict that ultra-thin films of plasmonic materials can be used to dramatically enhance near-field heat transfer. The total spectrally integrated film-to-film heat transfer is over an order of magnitude larger than between the same materials in bulk form and also exceeds the levels achievable with polar dielectrics such as SiC. We attribute this enhancement to the significant spectral broadening of radiative heat transfer due to coupling between surface plasmon polaritons (SPPs on both sides of each thin film. We show that the radiative heat flux spectrum can be further shaped by the choice of the substrate onto which the thin film is deposited. In particular, substrates supporting surface phonon polaritons (SPhP strongly modify the heat flux spectrum owing to the interactions between SPPs on thin films and SPhPs of the substrate. The use of thin film phase change materials on polar dielectric substrates allows for dynamic switching of the heat flux spectrum between SPP-mediated and SPhP-mediated peaks.

  8. Hubble Goes IMAX: 3D Visualization of the GOODS Southern Field for a Large Format Short Film

    Summers, F. J.; Stoke, J. M.; Albert, L. J.; Bacon, G. T.; Barranger, C. L.; Feild, A. R.; Frattare, L. M.; Godfrey, J. P.; Levay, Z. G.; Preston, B. S.; Fletcher, L. M.; GOODS Team

    2003-12-01

    The Office of Public Outreach at the Space Telescope Science Institute is producing a several minute IMAX film that will have its world premiere at the January 2004 AAS meeting. The film explores the rich tapestry of galaxies in the GOODS Survey Southern Field in both two and three dimensions. This poster describes the visualization efforts from FITS files through the galaxy processing pipeline to 3D modelling and the rendering of approximately 100 billion pixels. The IMAX film will be shown at a special session at Fernbank Science Center, and the video will be shown at the STScI booth.

  9. Photon Reabsorption in Mixed CsPbCl3:CsPbI3 Perovskite Nanocrystal Films for Light-Emitting Diodes

    Davis, Nathaniel J. L. K.

    2017-01-24

    Cesium lead halide nanocrystals, CsPbX3 (X = Cl, Br, I), exhibit photoluminescence quantum efficiencies approaching 100% without the core–shell structures usually used in conventional semiconductor nanocrystals. These high photoluminescence efficiencies make these crystals ideal candidates for light-emitting diodes (LEDs). However, because of the large surface area to volume ratio, halogen exchange between perovskite nanocrystals of different compositions occurs rapidly, which is one of the limiting factors for white-light applications requiring a mixture of different crystal compositions to achieve a broad emission spectrum. Here, we use mixtures of chloride and iodide CsPbX3 (X = Cl, I) perovskite nanocrystals where anion exchange is significantly reduced. We investigate samples containing mixtures of perovskite nanocrystals with different compositions and study the resulting optical and electrical interactions. We report excitation transfer from CsPbCl3 to CsPbI3 in solution and within a poly(methyl methacrylate) matrix via photon reabsorption, which also occurs in electrically excited crystals in bulk heterojunction LEDs.

  10. Electric Field Controlled Magnetism in BiFeO3/Ferromagnet Films

    Holcomb, M. B.; Chu, Y. H.; Martin, L. W.; Gajek, M.; Seidel, J.; Ramesh, R.; Scholl, A.; Fraile-Rodriguez, A.

    2008-03-01

    Electric field control of magnetism is a hot technological topic at the moment due to its potential to revolutionize today's devices. Magnetoelectric materials, those having both electric and magnetic order and the potential for coupling between the two, are a promising avenue to approach electric control. BiFeO3, both a ferroelectric and an antiferromagnet, is the only single phase room temperature magnetoelectric that is currently known. In addition to other possibilities, its multiferroic nature has potential in the very active field of exchange bias, where an antiferromagnetic thin film pins the magnetic direction of an adjoining ferromagnetic layer. Since this antiferromagnet is electrically tunable, this coupling could allow electric-field control of the ferromagnetic magnetization. Direction determination of antiferromagnetic domains in BFO has recently been shown using linear and circular dichroism studies. Recently, this technique has been extended to look at the magnetic domains of a ferromagnetic grown on top of BFO. The clear magnetic changes induced by application of electric fields reveal the possibility of electric control.

  11. Characterization of an extrapolation chamber and radiochromic films for verifying the metrological coherence among beta radiation fields

    Castillo, Jhonny Antonio Benavente

    2011-01-01

    The metrological coherence among standard systems is a requirement for assuring the reliability of dosimetric quantities measurements in ionizing radiation field. Scientific and technologic improvements happened in beta radiation metrology with the installment of the new beta secondary standard BSS2 in Brazil and with the adoption of the internationally recommended beta reference radiations. The Dosimeter Calibration Laboratory of the Development Center for Nuclear Technology (LCD/CDTN), in Belo Horizonte, implemented the BSS2 and methodologies are investigated for characterizing the beta radiation fields by determining the field homogeneity, the accuracy and uncertainties in the absorbed dose in air measurements. In this work, a methodology to be used for verifying the metrological coherence among beta radiation fields in standard systems was investigated; an extrapolation chamber and radiochromic films were used and measurements were done in terms of absorbed dose in air. The reliability of both the extrapolation chamber and the radiochromic film was confirmed and their calibrations were done in the LCD/CDTN in 90 Sr/ 90 Y, 85 Kr and 147 Pm beta radiation fields. The angular coefficients of the extrapolation curves were determined with the chamber; the field mapping and homogeneity were obtained from dose profiles and isodose with the radiochromic films. A preliminary comparison between the LCD/CDTN and the Instrument Calibration Laboratory of the Nuclear and Energy Research Institute / Sao Paulo (LCI/IPEN) was carried out. Results with the extrapolation chamber measurements showed in terms of absorbed dose in air rates showed differences between both laboratories up to de -I % e 3%, for 90 Sr/ 90 Y, 85 Kr and 147 Pm beta radiation fields, respectively. Results with the EBT radiochromic films for 0.1, 0.3 and 0.15 Gy absorbed dose in air, for the same beta radiation fields, showed differences up to 3%, -9% and -53%. The beta radiation field mappings with

  12. Electric field modulation of magnetic anisotropy and microwave absorption properties in Fe50Ni50/Teflon composite films

    Zhenjun Xia

    2016-05-01

    Full Text Available Fe50Ni50 nanoparticle films with the size about 6 nm were deposited by a high energetic cluster deposition source. An electric field of about 0 - 40 kV was applied on the sample platform when the films were prepared. The field assisted deposition technique can dramatically induce in-plane magnetic anisotropy. To probe the microwave absorption properties, the Fe50Ni50 nanoparticles were deliberately deposited on the dielectric Teflon sheet. Then the laminated Fe50Ni50/Teflon composites were used to do reflection loss scan. The results prove that the application of electric field is an effective avenue to improve the GHz microwave absorption performance of our magnetic nanoparticles films expressed by the movement of reflection loss peak to high GHz region for the composites.

  13. Field-tuned superconductor-insulator transitions and Hall resistance in thin polycrystalline MoN films

    Makise, Kazumasa; Ichikawa, Fusao; Asano, Takayuki; Shinozaki, Bunju

    2018-02-01

    We report on the superconductor-insulator transitions (SITs) of disordered molybdenum nitride (MoN) thin films on (1 0 0) MgO substrates as a function of the film thickness and magnetic fields. The T c of the superconducting MoN films, which exhibit a sharp superconducting transition, monotonically decreases as the normal state R sq increases with a decreasing film thickness. For several films with different thicknesses, we estimate the critical field H c and the product zν  ≃  0.6 of the dynamical exponent z and the correlation length exponent ν using a finite scaling analysis. The value of this product can be explained by the (2  +  1) XY model. We found that the Hall resistance ΔR xy (H) is maximized when the magnetic field satisfies H HP(T) \\propto |1  -  T/T C0| in the superconducting state and also in the normal states owning to the superconducting fluctuation corresponding to the ghost critical magnetic field. We measured the Hall conductivity δσ xy (H)  =  σ xy (H)  -  σ xyn and fit the Gaussian approximation theory for δσ xy (H) to the experimental data. Agreement between the data and the theory beyond H c suggests the survival of the Cooper pair in the insulating region of the SIT.

  14. Low-macroscopic field emission from silicon-incorporated diamond-like carbon film synthesized by dc PECVD

    Ahmed, Sk.F.; Mitra, M.K.; Chattopadhyay, K.K.

    2007-01-01

    Silicon-incorporated diamond-like carbon (Si-DLC) films were deposited via dc plasma-enhanced chemical vapor deposition (PECVD), on glass and alumina substrates at a substrate temperature 300 deg. C. The precursor gas used was acetylene and for Si incorporation, tetraethyl orthosilicate dissolved in methanol was used. Si atomic percentage in the films was varied from 0% to 19.3% as measured from energy-dispersive X-ray analysis (EDX). The binding energies of C 1s, Si 2s and Si 2p were determined from X-ray photoelectron spectroscopic studies. We have observed low-macroscopic field electron emission from Si-DLC thin films deposited on glass substrates. The emission properties have been studied for a fixed anode-sample separation of 80 μm for different Si atomic percentages in the films. The turn-on field was also found to vary from 16.19 to 3.61 V/μm for a fixed anode-sample separation of 80 μm with a variation of silicon atomic percentage in the films 0% to 19.3%. The turn-on field and approximate work function are calculated and we have tried to explain the emission mechanism there from. It was found that the turn-on field and effective emission barrier were reduced by Si incorporation than undoped DLC

  15. Poster – 13: Evaluation of an in-house CCD camera film dosimetry imaging system for small field deliveries

    Lalonde, Michel; Alexander, Kevin; Olding, Tim; Schreiner, L. John; Kerr, Andrew T.

    2016-01-01

    Purpose: Radiochromic film dosimetry is a standard technique used in clinics to verify modern conformal radiation therapy delivery, and sometimes in research to validate other dosimeters. We are using film as a standard for comparison as we improve high-resolution three-dimensional gel systems for small field dosimetry; however, precise film dosimetry can be technically challenging. We report here measurements for fractionated stereotactic radiation therapy (FSRT) delivered using volumetric modulated arc therapy (VMAT) to investigate the accuracy and reproducibility of film measurements with a novel in-house readout system. We show that radiochromic film can accurately and reproducibly validate FSRT deliveries and also benchmark our gel dosimetry work. Methods: VMAT FSRT plans for metastases alone (PTV MET ) and whole brain plus metastases (WB+PTV MET ) were delivered onto a multi-configurational phantom with a sheet of EBT3 Gafchromic film inserted mid-plane. A dose of 400 cGy was prescribed to 4 small PTV MET structures in the phantom, while a WB structure was prescribed a dose of 200 cGy in the WB+PTV MET iterations. Doses generated from film readout with our in-house system were compared to treatment planned doses. Each delivery was repeated multiple times to assess reproducibility. Results and Conclusions: The reproducibility of film optical density readout was excellent throughout all experiments. Doses measured from the film agreed well with plans for the WB+PTV MET delivery. But, film doses for PTV MET only deliveries were significantly below planned doses. This discrepancy is due to stray/scattered light perturbations in our system during readout. Corrections schemes will be presented.

  16. Poster – 13: Evaluation of an in-house CCD camera film dosimetry imaging system for small field deliveries

    Lalonde, Michel; Alexander, Kevin; Olding, Tim; Schreiner, L. John; Kerr, Andrew T. [Cancer Centre of Southeastern Ontario at KGH, Queen’s University (Canada)

    2016-08-15

    Purpose: Radiochromic film dosimetry is a standard technique used in clinics to verify modern conformal radiation therapy delivery, and sometimes in research to validate other dosimeters. We are using film as a standard for comparison as we improve high-resolution three-dimensional gel systems for small field dosimetry; however, precise film dosimetry can be technically challenging. We report here measurements for fractionated stereotactic radiation therapy (FSRT) delivered using volumetric modulated arc therapy (VMAT) to investigate the accuracy and reproducibility of film measurements with a novel in-house readout system. We show that radiochromic film can accurately and reproducibly validate FSRT deliveries and also benchmark our gel dosimetry work. Methods: VMAT FSRT plans for metastases alone (PTV{sub MET}) and whole brain plus metastases (WB+PTV{sub MET}) were delivered onto a multi-configurational phantom with a sheet of EBT3 Gafchromic film inserted mid-plane. A dose of 400 cGy was prescribed to 4 small PTV{sub MET} structures in the phantom, while a WB structure was prescribed a dose of 200 cGy in the WB+PTV{sub MET} iterations. Doses generated from film readout with our in-house system were compared to treatment planned doses. Each delivery was repeated multiple times to assess reproducibility. Results and Conclusions: The reproducibility of film optical density readout was excellent throughout all experiments. Doses measured from the film agreed well with plans for the WB+PTV{sub MET} delivery. But, film doses for PTV{sub MET} only deliveries were significantly below planned doses. This discrepancy is due to stray/scattered light perturbations in our system during readout. Corrections schemes will be presented.

  17. A comparison of the accuracy of film-screen mammography, full-field digital mammography, and digital breast tomosynthesis

    Michell, M.J.; Iqbal, A.; Wasan, R.K.; Evans, D.R.; Peacock, C.; Lawinski, C.P.; Douiri, A.; Wilson, R.; Whelehan, P.

    2012-01-01

    Aim: To measure the change in diagnostic accuracy of conventional film-screen mammography and full-field digital mammography (FFDM) with the addition of digital breast tomosynthesis (DBT) in women recalled for assessment following routine screening. Materials and methods: Ethics approval for the study was granted. Women recalled for assessment following routine screening with screen-film mammography were invited to participate. Participants underwent bilateral, two-view FFDM and two-view DBT. Readers scored each lesion separately for probability of malignancy on screen-film mammography, FFDM, and then DBT. The scores were compared with the presence or absence of malignancy based on the final histopathology outcome. Results: Seven hundred and thirty-eight women participated (93.2% recruitment rate). Following assessment 204 (26.8%) were diagnosed as malignant (147 invasive and 57 in-situ tumours), 286 (37.68%) as benign, and 269 (35.4%) as normal. The diagnostic accuracy was evaluated by using receiving operating characteristic (ROC) and measurement of area under the curve (AUC). The AUC values demonstrated a significant (p = 0.0001) improvement in the diagnostic accuracy with the addition of DBT combined with FFDM and film-screen mammography (AUC = 0.9671) when compared to FFDM plus film-screen mammography (AUC = 0.8949) and film-screen mammography alone (AUC = 0.7882). The effect was significantly greater for soft-tissue lesions [AUC was 0.9905 with the addition of DBT and AUC was 0.9201 for FFDM with film-screen mammography combined (p = 0.0001)] compared to microcalcification [with the addition of DBT (AUC = 0.7920) and for FFDM with film-screen mammography combined (AUC = 0.7843; p = 0.3182)]. Conclusion: The addition of DBT increases the accuracy of mammography compared to FFDM and film-screen mammography combined and film-screen mammography alone in the assessment of screen-detected soft-tissue mammographic abnormalities.

  18. Composition, structure and properties of SiN x films fabricated by pulsed reactive closed-field unbalanced magnetron sputtering

    Yao, Zh.Q.; Yang, P.; Huang, N.; Sun, H.; Wan, G.J.; Leng, Y.X.; Chen, J.Y.

    2005-01-01

    Silicon nitride (SiN x ) thin films are of special interest in both scientific research and industrial applications due to their remarkable properties such as high thermal stability, chemical inertness, high hardness and good dielectric properties. In this work, SiN x films were fabricated by pulsed reactive closed-field unbalanced magnetron sputtering of high purity single crystal silicon targets in an Ar-N 2 mixture. The effect of N 2 partial pressure on the film composition, chemical bonding configurations, surface morphology, surface free energy, optical and mechanical properties were investigated. We showed that with increased N 2 partial pressure, the N to Si ratio (N/Si) in the film increased and N atoms are preferentially incorporated in the NSi 3 stoichiometric configuration. It leads the Si-N network a tendency to chemical order. Films deposited at a high N 2 fraction were consistently N-rich. The film surface transformed from a loose granular structure with microporosity to a homogeneous, continuous, smooth and dense structure. A progressive densification of the film microstructure occurs as the N 2 fraction is increased. The reduced surface roughness and the increased N incorporation in the film give rise to the increased contact angle with double-distilled water from 24 o to 49.6 o . To some extent, the SiN x films deposited by pulsed magnetron sputtering are hydrophilic in nature. The as-deposited SiN x films exhibit good optical transparency in the visible region and the optical band gap E opt can be varied from 1.68 eV for a-Si to 3.62 eV for SiN x films, depending on the synthesis parameters. With the increase of the N/Si atomic ratio, wear resistance of the SiN x films was improved, a consequence of increased hardness and elastic modulus. The SiN x films have lower friction coefficient and better wear resistance than 316L stainless steel under dry sliding friction, where the SiN x films experienced only fatigue wear

  19. Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films

    Yurchuk, Ekaterina

    2015-01-01

    Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO 2 ) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO 2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO 2 -based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

  20. Characterization of novel powder and thin film RGB phosphors for field emissions display application

    Chakhovskoi, A.G.; Hunt, C.E.

    1996-01-01

    The spectral response, brightness and outgassing characteristics of new, low-voltage phosphors for application in field-emission flat-panel displays, are presented. The tested phosphor materials include combustion synthesized powders and thin films prepared by RF-diode or magnetron sputtering, laser ablation and molecular beam epitaxy. These cathodoluminescent materials are tested with e-beam excitation at currents up to 50 μA within the 200-2000V (e.g. open-quotes low-voltageclose quotes) and 3-8 kV (e.g. open-quotes medium voltageclose quotes) ranges. The spectral coordinates are compared to commercial low-voltage P22 phosphors. Phosphor outgassing, as a function of time is measured with a residual gas analyzer at fixed 50 μA beam current in the low-voltage range. We find that levels of outgassing stabilize to low values after the first few hours of excitation. The desorption rates measured for powder phosphor layers with different thickness are compared to desorption from thin films

  1. Imaging optical fields below metal films and metal-dielectric waveguides by a scanning microscope

    Zhu, Liangfu; Wang, Yong; Zhang, Douguo; Wang, Ruxue; Qiu, Dong; Wang, Pei; Ming, Hai; Badugu, Ramachandram; Rosenfeld, Mary; Lakowicz, Joseph R.

    2017-09-01

    Laser scanning confocal fluorescence microscopy (LSCM) is now an important method for tissue and cell imaging when the samples are located on the surfaces of glass slides. In the past decade, there has been extensive development of nano-optical structures that display unique effects on incident and transmitted light, which will be used with novel configurations for medical and consumer products. For these applications, it is necessary to characterize the light distribution within short distances from the structures for efficient detection and elimination of bulky optical components. These devices will minimize or possibly eliminate the need for free-space light propagation outside of the device itself. We describe the use of the scanning function of a LSCM to obtain 3D images of the light intensities below the surface of nano-optical structures. More specifically, we image the spatial distributions inside the substrate of fluorescence emission coupled to waveguide modes after it leaks through thin metal films or dielectric-coated metal films. The observed spatial distribution were in general agreement with far-field calculations, but the scanning images also revealed light intensities at angles not observed with classical back focal plane imaging. Knowledge of the subsurface optical intensities will be crucial in the combination of nano-optical structures with rapidly evolving imaging detectors.

  2. The field induced e31,f piezoelectric and Rayleigh response in barium strontium titanate thin films

    Garten, L. M.; Trolier-McKinstry, S.

    2014-01-01

    The electric field induced e 31,f piezoelectric response and tunability of Ba 0.7 Sr 0.3 TiO 3 (70:30) and Ba 0.6 Sr 0.4 TiO 3 (60:40) thin films on MgO and silicon was measured. The relative dielectric tunabilities for the 70:30 and 60:40 compositions on MgO were 83% and 70%, respectively, with a dielectric loss of less than 0.011 and 0.004 at 100 kHz. A linear increase in induced piezoelectricity to −3.0 C/m 2 and −1.5 C/m 2 at 110 kV/cm was observed in Ba 0.6 Sr 0.4 TiO 3 on MgO and Ba 0.7 Sr 0.3 TiO 3 on Si. Hysteresis in the piezoelectric and dielectric response of the 70:30 composition films was consistent with the positive irreversible dielectric Rayleigh coefficient. Both indicate a ferroelectric contribution to the piezoelectric and dielectric response over 40–80 °C above the global paraelectric transition temperature.

  3. Fluctuation fields and medium noise in CoCrTa and CoCrPt films

    Yamanaka, K.; Yamamoto, T.; Tanahashi, K.; Inaba, N.; Hosoe, Y.; Uesaka, Y.; Futamoto, M.

    1995-01-01

    The correlation between magnetic viscosity and medium noise in CoCrTa and CoCrPt longitudinal thin-film media was investigated by measuring the time dependence of the remanence coercivity H r and the read/write characteristics. The media were prepared by dc magnetron sputtering under various conditions. Fluctuation fields H f of the magnetic viscosity at H/H r =1 were obtained from the slopes of the H r versus ln t plots. The medium noise decreases with kT/H f (the product of activation volume and saturation magnetization per unit volume), and is independent of other magnetic properties, such as the coercivity and the remanent magnetization per unit area. The medium noise thus primarily depends on the size of the minimum unit of the magnetic moment in reversal. (orig.)

  4. An effective field study of the magnetic properties and critical behaviour at the surface Ising film

    Bengrine, M.; Benyoussef, A.; Ez-Zahraouy, H.; Mhirech, F.

    1998-09-01

    The influence of corrugation and disorder at the surface on the critical behaviour of a ferromagnetic spin-1/2 Ising film is investigated using mean-field theory and finite cluster approximation. It is found that the critical surface exponent β 1 follows closely the one of a perfect surface, in the two cases: corrugated surface and random equiprobable coupling surface. However, in the case of flat surface with random interactions the surface critical exponent β 1 depends on the concentration p of the strong interaction for p>p c =0,5, while for p≤p c , such critical exponent is independent on the value of p and is equal to the one of the perfect surface. Moreover, in the case of corrugated surface, the effective exponent for a layer z, β eff J(z,n), is calculated as a function of the number of steps at the surface. (author)

  5. Films with discrete nano-DLC-particles as the field emission cascade

    Song Fengqi; Bu Haijun; Wan Jianguo; Wang Guanghou; Zhou Feng; He Longbing; Han Min; Zhou Jianfeng; Wang Xiaoshu

    2008-01-01

    Films with discrete diamond-like-carbon (DLC) nanoparticles were prepared by the deposition of the carbon nanoparticle beam. Their morphologies were imaged by scanning electron microscopy and atomic force microscopy (AFM). The nanoparticles were found to be distributed on the silicon (1 0 0) substrate discretely. Hemispherical shapes of the nanoparticles were demonstrated by the AFM line profile. Electron energy loss spectra were measured and an sp 3 ratio as high as 86% was found. Field-induced electron emission of the as-prepared cascade (nanoDLC/ Si) was tested and a current density of 1 mA cm -2 was achieved at 10.2 V μm -1 . (fast track communication)

  6. Magnetic fields are causing small, but significant changes of the radiochromic EBT3 film response to 6 MV photons

    Delfs, Björn; Schoenfeld, Andreas A.; Poppinga, Daniela; Kapsch, Ralf-Peter; Jiang, Ping; Harder, Dietrich; Poppe, Björn; Khee Looe, Hui

    2018-02-01

    The optical density (OD) of EBT3 radiochromic films (Ashland Specialty Ingredients, Bridgewater, NJ, USA) exposed to absorbed doses to water up to D  =  20 Gy in magnetic fields of B  =  0.35 and 1.42 T was measured in the three colour channels of an Epson Expression 10000XL flatbed scanner. A 7 cm wide water phantom with fixed film holder was placed between the pole shoes of a constant-current electromagnet with variable field strength and was irradiated by a 6 MV photon beam whose axis was directed at right angles with the field lines. The doses at the film position at water depth 5 cm were measured with a calibrated ionization chamber when the magnet was switched off and were converted to the doses in presence of the magnetic field via the monitor units and by a Monte Carlo-calculated correction accounting for the slight change of the depth dose curves in magnetic fields. In the presence of the 0.35 and 1.42 T fields small negative changes of the OD values at given absorbed doses to water occurred and just significantly exceeded the uncertainty margin given by the stochastic and the uncorrected systematic deviations. This change can be described by a  +2.1% change of the dose values needed to produce a given optical density in the presence of a 1.42 T field. The thereby modified OD versus D function remained unchanged irrespective of whether the original short film side—the preference direction of the monomer crystals of the film—was directed parallel or orthogonal to the magnetic field. The ‘orientation effect’, the difference between the optical densities measured in the ‘portrait’ or ‘landscape’ film positions on the scanner bed caused by the reflection of polarised light in the scanner’s mirror system, remained unaltered after EBT3 film exposure in magnetic fields. An independent optical bench investigation of EBT3 films exposed to doses of 10 and 20 Gy at 0.35 and 1.42 T showed that the direction of the electric

  7. Solid-state, ambient-operation thermally activated delayed fluorescence from flexible, non-toxic gold-nanocluster thin films: towards the development of biocompatible light-emitting devices

    Talite, M. J. A.; Lin, H. T.; Jiang, Z. C.; Lin, T. N.; Huang, H. Y.; Heredia, E.; Flores, A.; Chao, Y. C.; Shen, J. L.; Lin, C. A. J.; Yuan, C. T.

    2016-08-01

    Luminescent gold nanoclusters (AuNCs) with good biocompatibility have gained much attention in bio-photonics. In addition, they also exhibit a unique photo-physical property, namely thermally activated delayed fluorescence (TADF), by which both singlet and triplet excitons can be harvested. The combination of their non-toxic material property and unique TADF behavior makes AuNCs biocompatible nano-emitters for bio-related light-emitting devices. Unfortunately, the TADF emission is quenched when colloidal AuNCs are transferred to solid states under ambient environment. Here, a facile, low-cost and effective method was used to generate efficient and stable TADF emissions from solid AuNCs under ambient environment using polyvinyl alcohol as a solid matrix. To unravel the underlying mechanism, temperature-dependent static and transient photoluminescence measurements were performed and we found that two factors are crucial for solid TADF emission: small energy splitting between singlet and triplet states and the stabilization of the triplet states. Solid TADF films were also deposited on the flexible plastic substrate with patterned structures, thus mitigating the waveguide-mode losses. In addition, we also demonstrated that warm white light can be generated based on a co-doped single emissive layer, consisting of non-toxic, solution-processed TADF AuNCs and fluorescent carbon dots under UV excitation.

  8. Field measurements of trace gases and aerosols emitted by peat fires in Central Kalimantan, Indonesia, during the 2015 El Niño

    C. E. Stockwell

    2016-09-01

    (0.697 ± 0.460, and acetone (0.691 ± 0.356. These field data support significant revision of the EFs for CO2 (−8 %, CH4 (−55 %, NH3 (−86 %, CO (+39 %, and other gases compared with widely used recommendations for tropical peat fires based on a lab study of a single sample published in 2003. BTEX compounds (benzene, toluene, ethylbenzene, xylenes are important air toxics and aerosol precursors and were emitted in total at 1.5 ± 0.6 g kg−1. Formaldehyde is probably the air toxic gas most likely to cause local exposures that exceed recommended levels. The field results from Kalimantan were in reasonable agreement with recent lab measurements of smoldering Kalimantan peat for “overlap species,” lending importance to the lab finding that burning peat produces large emissions of acetamide, acrolein, methylglyoxal, etc., which were not measurable in the field with the deployed equipment and implying value in continued similar efforts. The aerosol optical data measured include EFs for the scattering and absorption coefficients (EF Bscat and EF Babs, m2 kg−1 fuel burned and the single scattering albedo (SSA at 870 and 405 nm, as well as the absorption Ångström exponents (AAE. By coupling the absorption and co-located trace gas and filter data we estimated black carbon (BC EFs (g kg−1 and the mass absorption coefficient (MAC, m2 g−1 for the bulk organic carbon (OC due to brown carbon (BrC. Consistent with the minimal flaming, the emissions of BC were negligible (0.0055 ± 0.0016 g kg−1. Aerosol absorption at 405 nm was  ∼  52 times larger than at 870 nm and BrC contributed  ∼  96 % of the absorption at 405 nm. Average AAE was 4.97 ± 0.65 (range, 4.29–6.23. The average SSA at 405 nm (0.974 ± 0.016 was marginally lower than the average SSA at 870 nm (0.998 ± 0.001. These data facilitate modeling climate-relevant aerosol optical properties across much of the UV

  9. The enhanced piezoelectricity in compositionally graded ferroelectric thin films under electric field: A role of flexoelectric effect

    Qiu, Ye; Wu, Huaping; Wang, Jie; Lou, Jia; Zhang, Zheng; Liu, Aiping; Chai, Guozhong

    2018-02-01

    Compositionally graded ferroelectric thin films are found to produce large strain gradients, which can be used to tune the physical properties of materials through the flexoelectric effect, i.e., the coupling of polarization and the strain gradient. The influences of the flexoelectric effect on the polarization distribution and the piezoelectric properties in compositionally graded Ba1-xSrxTiO3 ferroelectric thin films are investigated by using an extended thermodynamic theory. The calculation results show that the presence of the flexoelectric effect tends to enhance and stabilize polarization components. The polarization rotation induced by the flexoelectric field has been predicted, which is accompanied by more uniform and orderly polarization components. A remarkable enhancement of piezoelectricity is obtained when the flexoelectric field is considered, suggesting that compositionally graded Ba1-xSrxTiO3 ferroelectric thin films with a large strain gradient are promising candidates for piezoelectric devices.

  10. Effects of applied electric field during postannealing on the tunable properties of (Ba,Sr)TiO3 thin films

    Xia Yidong; Cheng Jinbo; Pan Bai; Wu Di; Meng Xiangkang; Liu Zhiguo

    2005-01-01

    The impact of postannealing in electric field on the structure, tunability, and dielectric behavior of rf magnetron sputtering derived (Ba,Sr)TiO 3 films has been studied. It has been demonstrated that postannealing in the proper electric field can increase the dielectric constant and the tunability remarkably and destroy the symmetry of capacitance-voltage characteristics of the films. The increased out-of-plane lattice constant and the appearance of the hysteresis loops in the electric-annealed films indicated the formation of small polar regions with tetragonal structure, which are responsible for the increased dielectric constant and tunability. It was proposed that the segregation of Ti 3+ ions caused by electric annealing could induce the formation of BaTiO 3 -like regions, which are ferroelectric at room temperature

  11. Effects of applied electric field during postannealing on the tunable properties of (Ba,Sr)TiO3 thin films

    Xia, Yidong; Cheng, Jinbo; Pan, Bai; Wu, Di; Meng, Xiangkang; Liu, Zhiguo

    2005-08-01

    The impact of postannealing in electric field on the structure, tunability, and dielectric behavior of rf magnetron sputtering derived (Ba,Sr)TiO3 films has been studied. It has been demonstrated that postannealing in the proper electric field can increase the dielectric constant and the tunability remarkably and destroy the symmetry of capacitance-voltage characteristics of the films. The increased out-of-plane lattice constant and the appearance of the hysteresis loops in the electric-annealed films indicated the formation of small polar regions with tetragonal structure, which are responsible for the increased dielectric constant and tunability. It was proposed that the segregation of Ti3+ ions caused by electric annealing could induce the formation of BaTiO3-like regions, which are ferroelectric at room temperature.

  12. Nanomagnetic behavior of fullerene thin films in Earth magnetic field in dark and under polarization light influences.

    Koruga, Djuro; Nikolić, Aleksandra; Mihajlović, Spomenko; Matija, Lidija

    2005-10-01

    In this paper magnetic fields intensity of C60 thin films of 60 nm and 100 nm thickness under the influence of polarization lights are presented. Two proton magnetometers were used for measurements. Significant change of magnetic field intensity in range from 2.5 nT to 12.3 nT is identified as a difference of dark and polarization lights of 60 nm and 100 nm thin films thickness, respectively. Specific power density of polarization light was 40 mW/cm2. Based on 200 measurement data average value of difference between magnetic intensity of C60 thin films, with 60 nm and 100 nm thickness, after influence of polarization light, were 3.9 nT and 9.9 nT respectively.

  13. A new verification film system for routine quality control of radiation fields: Kodak EC-L.

    Hermann, A; Bratengeier, K; Priske, A; Flentje, M

    2000-06-01

    The use of modern irradiation techniques requires better verification films for determining set-up deviations and patient movements during the course of radiation treatment. This is an investigation of the image quality and time requirement of a new verification film system compared to a conventional portal film system. For conventional verifications we used Agfa Curix HT 1000 films which were compared to the new Kodak EC-L film system. 344 Agfa Curix HT 1000 and 381 Kodak EC-L portal films of different tumor sites (prostate, rectum, head and neck) were visually judged on a light box by 2 experienced physicians. Subjective judgement of image quality, masking of films and time requirement were checked. In this investigation 68% of 175 Kodak EC-L ap/pa-films were judged "good", only 18% were classified "moderate" or "poor" 14%, but only 22% of 173 conventional ap/pa verification films (Agfa Curix HT 1000) were judged to be "good". The image quality, detail perception and time required for film inspection of the new Kodak EC-L film system was significantly improved when compared with standard portal films. They could be read more accurately and the detection of set-up deviation was facilitated.

  14. A new verification film system for routine quality control of radiation fields: Kodak EC-L

    Hermann, A.; Bratengeier, K.; Priske, A.; Flentje, M.

    2000-01-01

    Background: The use of modern irradiation techniques requires better verification films for determining set-up deviations and patient movements during the course of radiation treatment. This is an investigation of the image quality and time requirement of a new verification film system compared to a conventional portal film system. Material and Methods: For conventional verifications we used Agfa Curix HT 1000 films which were compared to the new Kodak EC-L film system. 344 Agfa Curix HT 1000 and 381 Kodak EC-L portal films of different tumor sites (prostate, rectum, head and neck) were visually judged on a light box by 2 experienced physicians. Subjective judgement of image quality, masking of films and time requirement were checked. Results: In this investigation 68% of 175 Kodak EC-L ap/pa-films were judged 'good', only 18% were classified 'moderate' or 'poor' 14%, but only 22% of 173 conventional ap/pa verification films (Agfa Curix HT 1000) were judged to be 'good'. Conclusions: The image quality, detail perception and time required for film inspection of the new Kodak EC-L film system was significantly improved when compared with standard portal films. They could be read more accurately and the detection of set-up deviation was facilitated. (orig.) [de

  15. Dependence of electrical property on the applied magnetic fields in spin coated Fe(III)-Phorphyrin films

    Utari; Kusumandari; Purnama, B.; Mudasir; Abraha, K.

    2016-01-01

    We report here on the experimental results of the effect of external magnetic field on the current flow in plane surface of Fe(III)-porphyrin thin layer. The deposition of the Fe(III)- porphyrin thin layer was done by spin coating method. The I-V characteristics of film were measured by means of two point probes. The sample of layer number N = 4 was used to evaluate the magnetic effect on the electrical currents. The ohmic characteristics of the I-V film measurement were obtained. The current decreases when magnetic field is applied to the system and saturated current is obtained at a given magnetic field. Here, the decrease in the current can be attributed to the recombination of carrier charge under the magnetic field. In addition, the magnitude of the saturated current is found to increase with the increase in the voltage used. (paper)

  16. Direct Reconstruction of Two-Dimensional Currents in Thin Films from Magnetic-Field Measurements

    Meltzer, Alexander Y.; Levin, Eitan; Zeldov, Eli

    2017-12-01

    An accurate determination of microscopic transport and magnetization currents is of central importance for the study of the electric properties of low-dimensional materials and interfaces, of superconducting thin films, and of electronic devices. Current distribution is usually derived from the measurement of the perpendicular component of the magnetic field above the surface of the sample, followed by numerical inversion of the Biot-Savart law. The inversion is commonly obtained by deriving the current stream function g , which is then differentiated in order to obtain the current distribution. However, this two-step procedure requires filtering at each step and, as a result, oversmooths the solution. To avoid this oversmoothing, we develop a direct procedure for inversion of the magnetic field that avoids use of the stream function. This approach provides enhanced accuracy of current reconstruction over a wide range of noise levels. We further introduce a reflection procedure that allows for the reconstruction of currents that cross the boundaries of the measurement window. The effectiveness of our approach is demonstrated by several numerical examples.

  17. Comparison of film dosimetry and Monte Carlo simulations in small field IMRT

    Kim, S.R.; Suh, T.S.; Choe, B.Y.; Lee, H.K. [The Catholic Univ., Seoul (Korea, Republic of); Sohn. Jason W. [Washington Univ., St. Louis (United States)

    2002-07-01

    Intensity modulated radiation therapy(IMRT) is a recent useful technique that conforms a high dose to the target volume while restricting dose to the surrounding critical organs. In IMRT, the small size beam let is used for intensity modulation. Thus, dose calculation in small field is very important. But, dose calculation in small field is not accurate in recent RTP system because electronic disequilibrium and the effect of multiple scattering electron are not considered in dose calculation. and therefore, We have evaluated the errors of depth dose and beam profile between measurement data and Monte Carlo simulation. With a homogeneous phantom and two heterogeneous phantoms, A thermoluminescent dosimeter (TLD) and radiochromic films have been selected for dose measurement in 6 MV photon beams. A linear accelerator Varian 2300C (Varian Medical Systems, USA) equipped with a multileaf collimator have been used in dose measurement. The results of simulations using the Monte Carlo systems BEAM/EGS4 (NRC, Canada) to model the beam geometry have been compared with dose measurements. Generally good agreements were found between measurements and dose calculations of Monte Carlo simulation. But some discrepancies were found in this study. Thus further study will be needed to compensate these errors.

  18. Printing method for organic light emitting device lighting

    Ki, Hyun Chul; Kim, Seon Hoon; Kim, Doo-Gun; Kim, Tae-Un; Kim, Snag-Gi; Hong, Kyung-Jin; So, Soon-Yeol

    2013-03-01

    Organic Light Emitting Device (OLED) has a characteristic to change the electric energy into the light when the electric field is applied to the organic material. OLED is currently employed as a light source for the lighting tools because research has extensively progressed in the improvement of luminance, efficiency, and life time. OLED is widely used in the plate display device because of a simple manufacture process and high emitting efficiency. But most of OLED lighting projects were used the vacuum evaporator (thermal evaporator) with low molecular. Although printing method has lower efficiency and life time of OLED than vacuum evaporator method, projects of printing OLED actively are progressed because was possible to combine with flexible substrate and printing technology. Printing technology is ink-jet, screen printing and slot coating. This printing method allows for low cost and mass production techniques and large substrates. In this research, we have proposed inkjet printing for organic light-emitting devices has the dominant method of thick film deposition because of its low cost and simple processing. In this research, the fabrication of the passive matrix OLED is achieved by inkjet printing, using a polymer phosphorescent ink. We are measured optical and electrical characteristics of OLED.

  19. Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

    Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, Husam N.

    2012-01-01

    High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility

  20. Extended-gate field-effect transistor (EG-FET) with molecularly imprinted polymer (MIP) film for selective inosine determination.

    Iskierko, Zofia; Sosnowska, Marta; Sharma, Piyush Sindhu; Benincori, Tiziana; D'Souza, Francis; Kaminska, Izabela; Fronc, Krzysztof; Noworyta, Krzysztof

    2015-12-15

    A novel recognition unit of chemical sensor for selective determination of the inosine, renal disfunction biomarker, was devised and prepared. For that purpose, inosine-templated molecularly imprinted polymer (MIP) film was deposited on an extended-gate field-effect transistor (EG-FET) signal transducing unit. The MIP film was prepared by electrochemical polymerization of bis(bithiophene) derivatives bearing cytosine and boronic acid substituents, in the presence of the inosine template and a thiophene cross-linker. After MIP film deposition, the template was removed, and was confirmed by UV-visible spectroscopy. Subsequently, the film composition was characterized by spectroscopic techniques, and its morphology and thickness were determined by AFM. The finally MIP film-coated extended-gate field-effect transistor (EG-FET) was used for signal transduction. This combination is not widely studied in the literature, despite the fact that it allows for facile integration of electrodeposited MIP film with FET transducer. The linear dynamic concentration range of the chemosensor was 0.5-50 μM with inosine detectability of 0.62 μM. The obtained detectability compares well to the levels of the inosine in body fluids which are in the range 0-2.9 µM for patients with diagnosed diabetic nephropathy, gout or hyperuricemia, and can reach 25 µM in certain cases. The imprinting factor for inosine, determined from piezomicrogravimetric experiments with use of the MIP film-coated quartz crystal resonator, was found to be 5.5. Higher selectivity for inosine with respect to common interferents was also achieved with the present molecularly engineered sensing element. The obtained analytical parameters of the devised chemosensor allow for its use for practical sample measurements. Copyright © 2015 Elsevier B.V. All rights reserved.

  1. Electric-field assisted switching of magnetization in perpendicularly magnetized (Ga,Mn)As films at high temperatures

    Wang, Hailong; Ma, Jialin; Yu, Xueze; Yu, Zhifeng; Zhao, Jianhua

    2017-01-01

    The electric-field effects on the magnetism in perpendicularly magnetized (Ga,Mn)As films at high temperatures have been investigated. An electric-field as high as 0.6 V nm-1 is applied by utilizing a solid-state dielectric Al2O3 film as a gate insulator. The coercive field, saturation magnetization and magnetic anisotropy have been clearly changed by the gate electric-field, which are detected via the anomalous Hall effect. In terms of the Curie temperature, a variation of about 3 K is observed as determined by the temperature derivative of the sheet resistance. In addition, electrical switching of the magnetization assisted by a fixed external magnetic field at 120 K is demonstrated, employing the gate-controlled coercive field. The above experimental results have been attributed to the gate voltage modulation of the hole density in (Ga,Mn)As films, since the ferromagnetism in (Ga,Mn)As is carrier-mediated. The limited modulation magnitude of magnetism is found to result from the strong charge screening effect introduced by the high hole concentration up to 1.10  ×  1021 cm-3, while the variation of the hole density is only about 1.16  ×  1020 cm-3.

  2. Organic Light-Emitting Diodes on Solution-Processed Graphene Transparent Electrodes

    Wu, Junbo; Agrawal, Mukul; Becerril, Héctor A.; Bao, Zhenan; Liu, Zunfeng; Chen, Yongsheng; Peumans, Peter

    2010-01-01

    Theoretical estimates indicate that graphene thin films can be used as transparent electrodes for thin-film devices such as solar cells and organic light-emitting diodes, with an unmatched combination of sheet resistance and transparency. We

  3. Structural and morphological modifications of the Co-thin films caused by magnetic field and pH variation

    Franczak, Agnieszka; Levesque, Alexandra; Bohr, Frederic; Douglade, Jacques; Chopart, Jean-Paul

    2012-01-01

    Highlights: ► Co electrodeposits were obtained at high electrolyte temperature under applied magnetic field. ► The temperature is commonly used in the industrial process. ► The effects of magnetic field up to 1 T and pH on structure and morphology were investigated. ► The high process temperature enhances HER which is diminishing by the magnetic field application. - Abstract: Cobalt films were deposited by use of the electrochemical process from a cobalt (II) sulfate solution on a titanium electrode and characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). The experiments at electrolyte temperature of 50 °C were performed which is commonly used in the industrial process. The effects of pH and low uniform magnetic field up to 1 T on structure and morphology changes were investigated. The detected phase composition indicates the presence of both phases: hexagonal centered packed and face centered cubic independent on the pH value and the applied magnetic field amplitude. Calculation of the orientation index of Co phase shows the preferential orientation in the films obtained at higher pH. SEM micro-imagines have shown the nucleus shape transition from coarse-grained to needle-shaped dependent on the application of B-field as well as on the pH variation in the case of higher pH level. Co-films obtained from the electrolyte of low pH were characterized by the fine-grained morphology which was not modified by the influence of magnetic field. AFM images proved the effect on roughness of the Co-films which is closely related with the obtained morphology.

  4. Low-field vortex dynamics in various high-Tc thin films

    Abstract. We present a novel ac susceptibility technique for the study of vortex creep in supercon- ducting thin films. With this technique we study the dynamics of dilute vortices in c-axis oriented. Y-123, Hg-1212, and Tl-1212 thin films, as well as a-axis oriented Hg-1212 thin films. Results on the Hg-1212 and Tl-1212 thin ...

  5. Improving the performance of nickel-coated fluorine-doped tin oxide thin films by magnetic-field-assisted laser annealing

    Li, Bao-jia, E-mail: li_bjia@126.com [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); Huang, Li-jing [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); Ren, Nai-fei [Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Kong, Xia; Cai, Yun-long; Zhang, Jie-lu [Jiangsu Tailong Reduction Box Co. Ltd., Taixing 225400 (China)

    2015-10-01

    Highlights: • Ni/FTO films were prepared by sputtering Ni layers on commercial FTO glass. • The as-prepared Ni/FTO films underwent magnetic-field-assisted laser annealing. • Magnetic field and laser fluence were crucial for improving quality of the films. • All Ni/FTO films displayed enhanced compactness after magnetic laser annealing. • Magnetic laser annealing using a fluence of 0.9 J/cm{sup 2} led to the best film quality. - Abstract: Nickel-coated fluorine-doped tin oxide (Ni/FTO) thin films were prepared by sputtering Ni layers on commercial FTO glass. The as-prepared Ni/FTO films underwent nanosecond pulsed laser annealing in an external magnetic field (0.4 T). The effects of the presence of magnetic field and laser fluence on surface morphology, crystal structure and photoelectric properties of the films were investigated. All the films displayed enhanced compactness after magnetic-field-assisted laser annealing. It was notable that both crystallinity and grain size of the films gradually increased with increasing laser fluence from 0.6 to 0.9 J/cm{sup 2}, and then decreased slightly with an increase in laser fluence to 1.1 J/cm{sup 2}. As a result, the film obtained by magnetic-field-assisted laser annealing using a fluence of 0.9 J/cm{sup 2} had the best overall photoelectric property with an average transmittance of 81.2%, a sheet resistance of 5.5 Ω/sq and a figure of merit of 2.27 × 10{sup −2} Ω{sup −1}, outperforming that of the film obtained by pure laser annealing using the same fluence.

  6. The effect of Ag layer thickness on the properties of WO{sub 3}/Ag/MoO{sub 3} multilayer films as anode in organic light emitting diodes

    Zadsar, Mehdi, E-mail: mehdi_zadsar@yahoo.com [Physics Department, University of Isfahan, Isfahan (Iran, Islamic Republic of); Fallah, Hamid Reza; Mahmoodzadeh, Morteza Haji [Physics Department, University of Isfahan, Isfahan (Iran, Islamic Republic of); Quantum Optics Research Group, University of Isfahan, Isfahan (Iran, Islamic Republic of); Tabatabaei, Seyed Vahid [Physics Department, University of Isfahan, Isfahan (Iran, Islamic Republic of)

    2012-04-15

    Transparent conductive WO{sub 3}/Ag/MoO{sub 3} (WAM) multilayer electrodes were fabricated by thermal evaporation and the effects of Ag layer thickness on the optoelectronic and structural properties of multilayer electrode as anode in organic light emitting diodes (OLEDs) were investigated using different analytical methods. For Ag layers with thickness varying between 5 and 20 nm, the best WAM performances, high optical transmittance (81.7%, at around 550 nm), and low electrical sheet resistance (9.75 {Omega}/cm{sup 2}) were obtained for 15 nm thickness. Also, the WAM structure with 15 nm of Ag layer thickness has a very smooth surface with an RMS roughness of 0.37 nm, which is suitable for use as transparent conductive anode in OLEDs. The current density-voltage-luminance (J-V-L) characteristics measurement shows that the current density of WAM/PEDOT:PSS/TPD/Alq{sub 3}/LiF/Al organic diode increases with the increase in thickness of Ag and WO{sub 3}/Ag (15 nm)/MoO{sub 3} device exhibits a higher luminance intensity at lower voltage than ITO/PEDOT:PSS/TPD/Alq{sub 3}/LiF/Al control device. Furthermore, this device shows the highest power efficiency (0.31 lm/W) and current efficiency (1.2 cd/A) at the current density of 20 mA/cm{sup 2}, which is improved 58% and 41% compared with those of the ITO-based device, respectively. The lifetime of the WO{sub 3}/Ag (15 nm)/MoO{sub 3} device was measured to be 50 h at an initial luminance of 50 cd/m{sup 2}, which is five times longer than 10 h for ITO-based device. - Highlights: Black-Right-Pointing-Pointer Investigation of Ag thickness effect on the properties of WO{sub 3}/Ag/MoO{sub 3} films. Black-Right-Pointing-Pointer Electrical conductivity of multilayer films increases with increasing Ag thickness. Black-Right-Pointing-Pointer Optical transmittance increases by Ag thickness and at 15 nm, reaches 81.7%. Black-Right-Pointing-Pointer Power efficiency of WO{sub 3}/Ag (15 nm)/MoO{sub 3} based devices is higher than that of

  7. Exposure to non-ionizing electromagnetic fields emitted from mobile phones induced DNA damage in human ear canal hair follicle cells.

    Akdag, Mehmet; Dasdag, Suleyman; Canturk, Fazile; Akdag, Mehmet Zulkuf

    2018-01-01

    The aim of this study was to investigate effect of radiofrequency radiation (RFR) emitted from mobile phones on DNA damage in follicle cells of hair in the ear canal. The study was carried out on 56 men (age range: 30-60 years old)in four treatment groups with n = 14 in each group. The groups were defined as follows: people who did not use a mobile phone (Control), people use mobile phones for 0-30 min/day (second group), people use mobile phones for 30-60 min/day (third group) and people use mobile phones for more than 60 min/day (fourth group). Ear canal hair follicle cells taken from the subjects were analyzed by the Comet Assay to determine DNA damages. The Comet Assay parameters measured were head length, tail length, comet length, percentage of head DNA, tail DNA percentage, tail moment, and Olive tail moment. Results of the study showed that DNA damage indicators were higher in the RFR exposure groups than in the control subjects. In addition, DNA damage increased with the daily duration of exposure. In conclusion, RFR emitted from mobile phones has a potential to produce DNA damage in follicle cells of hair in the ear canal. Therefore, mobile phone users have to pay more attention when using wireless phones.

  8. Radiation emitting devices act

    1970-01-01

    This Act, entitled the Radiation Emitting Devices Act, is concerned with the sale and importation of radiation emitting devices. Laws relating to the sale, lease or import, labelling, advertising, packaging, safety standards and inspection of these devices are listed as well as penalties for any person who is convicted of breaking these laws

  9. Piezoelectric Films for Innovations in the Field of MEMS and Biosensors

    Muralt, P.

    Microelectromechanical systems (MEMS) were born as a new technological discipline during the 1980s (for an introductory textbook, see, for instance [1]). The idea of the pioneers was to enlarge capabilities of integrated circuits based on silicon beyond pure electronics by adding mechanical elements, which were made of silicon and further materials of semiconductor technology. The addition of mechanics extended the application range of silicon technology to motion sensors, pressure and force sensors, small actuators, and a number of acoustic and ultrasonic devices, most importantly resonators for signal treatment. In order to profit from the symbiosis with electronics, those mechanical elements should, of course, be controlled by electronic signals. Evidently, this new silicon technology makes sense only for small, miniaturized devices. The technical advantage comes from the fact that powerful thin-film deposition and patterning techniques as used for semiconductor fabrication allow unprecedented precision of mechanics in the nano- to micrometer range. As a large number of devices are produced in parallel on the same wafer (batch processing), the cost level is acceptable in spite of expensive fabrication tools, at least at high production volumes. Concerning processing, the chemistry of silicon turned out to be very helpful: high etching rates of anisotropic wet etching in a base solution (as, e.g., KOH) and anisotropic deep silicon etching in a plasma reactor are crucial issues in efficiently tailoring silicon. Over the last 20 years, MEMS technology has became a proven and mature technology with many applications. While "MEMS" is still taken as a standing brand name for the field, the actual MEMS field has become much wider than stipulated by the notion of electromechanics, including thermal, optical, magnetic, chemical, biochemical, and further functional properties. Also, the main material of the device is not necessarily silicon, but may be glass or plastics

  10. Influence of the physical–chemical properties of polyaniline thin films on the final sensitivity of varied field effect sensors

    Mello, Hugo José Nogueira Pedroza Dias; Heimfarth, Tobias; Mulato, Marcelo

    2015-01-01

    We investigated the use of electrodeposited polyaniline (PANI) thin sensing films in pH sensors. Two configurations of the Extended Gate Field Effect Transistor (EGFET) sensor were studied: the Single EGFET (S-EGFET) and the Instrumental Amplifier EGFET (IA-EGFET) setups. The films were analyzed in both systems and the sensitivity and linearity of each sensor were compared. Initial sensitivities (70–80 mV/pH) measured in the IA-EGFET were reduced due to polymer bulk protonation after a prior measurement in the S-EGFET system. Films with high amount of deposited polymer had their sensitivities least reduced. Bulk protonation occurred due to the step potential applied to the reference electrode in the S-EGFET system. These changes were also analyzed by scanning electron microscopy (SEM), visible reflectance spectroscopy and evaluation of CIE L*a*b* color scale. PANI pH EGFET sensors exhibited good linearity and stability that along with their high sensitivity, easy processing and low cost film production have large potential applications. - Highlights: • Electrodeposited polyaniline thin films were analyzed in two EGFET setups. • Polymer protonation provided changeable sensitivities. • Color and morphological variation confirm polymer aggregation and electrical changes

  11. Influence of the physical–chemical properties of polyaniline thin films on the final sensitivity of varied field effect sensors

    Mello, Hugo José Nogueira Pedroza Dias, E-mail: hugodiasmello@usp.br; Heimfarth, Tobias; Mulato, Marcelo

    2015-06-15

    We investigated the use of electrodeposited polyaniline (PANI) thin sensing films in pH sensors. Two configurations of the Extended Gate Field Effect Transistor (EGFET) sensor were studied: the Single EGFET (S-EGFET) and the Instrumental Amplifier EGFET (IA-EGFET) setups. The films were analyzed in both systems and the sensitivity and linearity of each sensor were compared. Initial sensitivities (70–80 mV/pH) measured in the IA-EGFET were reduced due to polymer bulk protonation after a prior measurement in the S-EGFET system. Films with high amount of deposited polymer had their sensitivities least reduced. Bulk protonation occurred due to the step potential applied to the reference electrode in the S-EGFET system. These changes were also analyzed by scanning electron microscopy (SEM), visible reflectance spectroscopy and evaluation of CIE L*a*b* color scale. PANI pH EGFET sensors exhibited good linearity and stability that along with their high sensitivity, easy processing and low cost film production have large potential applications. - Highlights: • Electrodeposited polyaniline thin films were analyzed in two EGFET setups. • Polymer protonation provided changeable sensitivities. • Color and morphological variation confirm polymer aggregation and electrical changes.

  12. Electric-field-induced modification of the magnon energy, exchange interaction, and curie temperature of transition-metal thin films.

    Oba, M; Nakamura, K; Akiyama, T; Ito, T; Weinert, M; Freeman, A J

    2015-03-13

    The electric-field-induced modification in the Curie temperature of prototypical transition-metal thin films with the perpendicular magnetic easy axis, a freestanding Fe(001) monolayer and a Co monolayer on Pt(111), is investigated by first-principles calculations of spin-spiral structures in an external electric field (E field). An applied E field is found to modify the magnon (spin-spiral formation) energy; the change arises from the E-field-induced screening charge density in the spin-spiral states due to p-d hybridizations. The Heisenberg exchange parameters obtained from the magnon energy suggest an E-field-induced modification of the Curie temperature, which is demonstrated via Monte Carlo simulations that take the magnetocrystalline anisotropy into account.

  13. Film dosimetry in conformal radiotherapy

    Danciu, C; Proimos, B S [Patras Univ. (Greece). Dept. of Medical Physics

    1995-12-01

    Dosimetry, through a film sandwiched in a transverse cross-section of a solid phantom, is a method of choice in Conformal Radiotherapy because: (a) the blackness (density) of the film at each point offers a measure of the total dose received at that point, and (b) the film is easily calibrated by exposing a film strip in the same cross-section, through a stationary field. The film must therefore have the following properties: (a) it must be slow, in order not to be overexposed, even at a therapeutic dose of 200 cGy, and (b) the response of the film (density versus dose curve) must be independent of the photon energy spectrum. A few slow films were compared. It was found that the Kodak X-Omat V for therapy verification was the best choice. To investigate whether the film response was independent of the photon energy, response curves for six depths, starting from the depth of maximum dose to the depth of 25 cm, in solid phantom were derived. The vertical beam was perpendicular to the anterior surface of the phantom, which was at the distance of 100 cm from the source and the field was 15x15 cm at that distance. This procedure was repeated for photon beams emitted by a Cobalt-60 unit, two 6 MV and 15 MV Linear Accelerators, as well as a 45 MV Betatron. For each of those four different beams the film response was the same for all six depths. The results, as shown in the diagrams, are very satisfactory. The response curve under a geometry similar to that actually applied, when the film is irradiated in a transverse cross-section of the phantom, was derived. The horizontal beam was almost parallel (angle of 85) to the plane of the film. The same was repeated with the central ray parallel to the film (angle 90) and at a distance of 1.5 cm from the horizontal film. The field size was again 15x15 at the lateral entrance surface of the beam. The response curves remained the same, as when the beam was perpendicular to the films.

  14. Dosimetric parameters for small field sizes using Fricke xylenol gel, thermoluminescent and film dosimeters, and an ionization chamber

    Guzman Calcina, Carmen S; Oliveira, Lucas N de; Almeida, Carlos E de; Almeida, Adelaide de

    2007-01-01

    Dosimetric measurements in small therapeutic x-ray beam field sizes, such as those used in radiosurgery, that have dimensions comparable to or smaller than the build-up depth, require special care to avoid incorrect interpretation of measurements in regions of high gradients and electronic disequilibrium. These regions occur at the edges of any collimated field, and can extend to the centre of small fields. An inappropriate dosimeter can result in an underestimation, which would lead to an overdose to the patient. We have performed a study of square and circular small field sizes of 6 MV photons using a thermoluminescent dosimeter (TLD), Fricke xylenol gel (FXG) and film dosimeters. PMMA phantoms were employed to measure lateral beam profiles (1 x 1, 3 x 3 and 5 x 5 cm 2 for square fields and 1, 2 and 4 cm diameter circular fields), the percentage depth dose, the tissue maximum ratio and the output factor. An ionization chamber (IC) was used for calibration and comparison. Our results demonstrate that high resolution FXG, TLD and film dosimeters agree with each other, and that an ionization chamber, with low lateral resolution, underestimates the absorbed dose. Our results show that, when planning small field radiotherapy, dosimeters with adequate lateral spatial resolution and tissue equivalence are required to provide an accurate basic beam data set to correctly calculate the absorbed dose in regions of electronic disequilibrium

  15. Characterization of amorphous multilayered ZnO-SnO2 heterostructure thin films and their field effect electronic properties

    Lee, Su-Jae; Hwang, Chi-Sun; Pi, Jae-Eun; Yang, Jong-Heon; Oh, Himchan; Cho, Sung Haeng; Cho, Kyoung-Ik; Chu, Hye Yong

    2014-01-01

    Multilayered ZnO-SnO 2 heterostructure thin films were produced using pulsed laser ablation of pie-shaped ZnO-SnO 2 oxides target, and their structural and field effect electronic transport properties were investigated as a function of the thickness of the ZnO and SnO 2 layers. The films have an amorphous multilayered heterostructure composed of the periodic stacking of the ZnO and SnO 2 layers. The field effect electronic properties of amorphous multilayered ZnO-SnO 2 heterostructure thin film transistors (TFTs) are highly dependent on the thickness of the ZnO and SnO 2 layers. The highest electron mobility of 37 cm 2 /V s, a low subthreshold swing of a 0.19 V/decade, a threshold voltage of 0.13 V, and a high drain current on-to-off ratio of ∼10 10 obtained for the amorphous multilayered ZnO(1.5 nm)-SnO 2 (1.5 nm) heterostructure TFTs. These results are presumed to be due to the unique electronic structure of an amorphous multilayered ZnO-SnO 2 heterostructure film consisting of ZnO, SnO 2 , and ZnO-SnO 2 interface layers

  16. Propagation of magnetostatic spin waves in an yttrium iron garnet film for out-of-plane magnetic fields

    Bang, Wonbae; Lim, Jinho; Trossman, Jonathan; Tsai, C. C.; Ketterson, John B.

    2018-06-01

    We have observed the propagation of spin waves across a thin yttrium iron garnet film on (1 1 1) gadolinium gallium garnet for magnetic fields inclined with respect to the film plane. Two principle planes were studied: that for H in the plane defined by the wave vector k and the plane normal, n, with limiting forms corresponding to the Backward Volume and Forward Volume modes, and that for H in the plane perpendicular to k, with limiting forms corresponding to the Damon-Eshbach and Forward Volume modes. By exciting the wave at one edge of the film and observing the field dependence of the phase of the received signal at the opposing edge we determined the frequency vs. wavevector relation, ω = ω (k), of various propagating modes in the film. Avoided crossings are observed in the Damon-Eshbach and Forward Volume regimes when the propagating mode intersects the higher, exchange split, volume modes, leading to an extinction of the propagating mode; analysis of the resulting behavior allows a determination of the exchange parameter. The experimental results are compared with theoretical simulations.

  17. Polymer light emitting diodes

    Gautier-Thianche, Emmmanuelle

    1998-01-01

    We study sandwich type semiconducting polymer light emitting diodes; anode/polymer/cathode. ITO is selected as anode, this polymer is a blend of a commercially available polymer with a high hole transport ability: polyvinyl-carbazole and a laser dye: coumarin-515. Magnesium covered with silver is chosen for the anode. We study the influence of polymer thickness and coumarin doping ratio on electroluminescence spectrum, electric characteristics and quantum efficiency. An important drawback is that diodes lifetime remains low. In the second part of our study we determine degradations causes with X-Ray reflectivity experiments. It may be due to ITO very high roughness. We realize a new type of planar electroluminescent device: a channel type electroluminescent device in which polymer layer is inserted into an aluminium channel. Such a device is by far more stable than using classical sandwich structures with the same polymer composition: indeed, charges are generated by internal-field ionization and there is no injection from the electrode to the polymer. This avoids electrochemical reactions at electrodes, thus reducing degradations routes. (author) [fr

  18. Time-resolved measurements of the external electric field effects on fluorescence in electron donor and acceptor pairs of N-ethylcarbazole and dimethyl terephthalate doped in a polymer film

    Iimori, Toshifumi; Yoshizawa, Tomokazu; Nakabayashi, Takakazu; Ohta, Nobuhiro

    2005-01-01

    Electric-field-induced change in fluorescence decay has been measured for electron donor and acceptor pairs of N-ethylcarbazole (ECZ) and dimethyl terephthalate (DMTP) doped in a polymer film. Field-induced change in lifetime of the fluorescence emitted from the locally excited state of ECZ clearly shows that the electron transfer from the excited state of ECZ to DMTP is enhanced by an external electric field ( F ). A comparison is made between the experimental results of the field effect on decay profile of the ECZ fluorescence and the simulated results. Time-resolved electrofluorescence spectra as well as the field-induced change in decay profile of exciplex fluorescence show that exciplex fluorescence is quenched by F at the early stage of time following photoexcitation, but enhanced by F at a later stage of time. Both the decrease in the initial population of the fluorescent exciplex and the lengthening of the exciplex fluorescence in lifetime are shown to be induced by F

  19. Time-resolved measurements of the external electric field effects on fluorescence in electron donor and acceptor pairs of N-ethylcarbazole and dimethyl terephthalate doped in a polymer film

    Iimori, Toshifumi [Research Institute for Electronic Science (RIES), Hokkaido University, Sapporo 060-0812 (Japan); Graduate School of Environmental Earth Science, Hokkaido University, Sapporo 060-0810 (Japan); Yoshizawa, Tomokazu [Graduate School of Environmental Earth Science, Hokkaido University, Sapporo 060-0810 (Japan); Nakabayashi, Takakazu [Research Institute for Electronic Science (RIES), Hokkaido University, Sapporo 060-0812 (Japan); Graduate School of Environmental Earth Science, Hokkaido University, Sapporo 060-0810 (Japan); Ohta, Nobuhiro [Research Institute for Electronic Science (RIES), Hokkaido University, Sapporo 060-0812 (Japan); Graduate School of Environmental Earth Science, Hokkaido University, Sapporo 060-0810 (Japan)], E-mail: nohta@es.hokudai.ac.jp

    2005-12-07

    Electric-field-induced change in fluorescence decay has been measured for electron donor and acceptor pairs of N-ethylcarbazole (ECZ) and dimethyl terephthalate (DMTP) doped in a polymer film. Field-induced change in lifetime of the fluorescence emitted from the locally excited state of ECZ clearly shows that the electron transfer from the excited state of ECZ to DMTP is enhanced by an external electric field ( F ). A comparison is made between the experimental results of the field effect on decay profile of the ECZ fluorescence and the simulated results. Time-resolved electrofluorescence spectra as well as the field-induced change in decay profile of exciplex fluorescence show that exciplex fluorescence is quenched by F at the early stage of time following photoexcitation, but enhanced by F at a later stage of time. Both the decrease in the initial population of the fluorescent exciplex and the lengthening of the exciplex fluorescence in lifetime are shown to be induced by F.

  20. Relationships between carbon fluxes and environmental factors in a drip-irrigated, film-mulched cotton field in arid region

    Li, Xiaoyu; Liu, Lijuan; Yang, Huijin; Li, Yan

    2018-01-01

    Environmental factors and human activities play important roles in carbon fixation and emissions generated from croplands. Eddy covariance measurements in a drip-irrigated, film-mulched cotton field were used to analyze the relationships between carbon fluxes and environmental factors in Wulanwusu, northern Xinjiang, an arid region of Northwest China. Our results showed that the cumulative net carbon flux (NEE) was -304.8 g C m-2 (a strong sink) over the whole cotton growing season in 2012, w...

  1. Low-field magnetoresistance anisotropy in strained ultrathin Pr0.67Sr0.33MnO3 films

    Wang, H.S.; Li, Q.

    1999-01-01

    The authors have studied the anisotropic low-field magnetoresistance (LFMR) in ultrathin Pr 0.67 sr 0.33 MnO 3 (PSMO) films epitaxially grown on LaAlO 3 (LAO), STiO 3 (STO), and NdGaO 3 (NGO) substrates which impose compressive, tensile, and nearly-zero strains in the films. The compressively-strained films show a very large negative LFMR in a perpendicular magnetic field and a much smaller MR in a parallel field, while the tensile-strain films show positive LFMR in a perpendicular field and negative MR in a parallel field. The results are interpreted based on the strain-induced magnetic anisotropy

  2. Measurements of the surface impedance and the ac critical field of superconducting thin tin films at 10 GHz

    Spencer, G.L.

    1976-01-01

    The surface impedances and ac critical fields of superconducting thin tin films were studied. These experiments were performed using a superconducting frequency stabilized microwave cavity of high Q. Measurements of the power losses in the cavity and the center frequency of the cavity were used to determine the surface impedance and the critical field of a thin film sample placed in the cavity. In this case a theoretical treatment based on a model proposed by I.O. Kulik was used to fit the data. The general agreement between the modified Kulik treatment and the data, obtained in this experiment, was substantial. The second method was to modify the thin film data to correspond to a bulk situation. This modification was accomplished by taking into account the measuring techniques used and the geometric consideration inherent in the experiment. The comparison between the modified experimental data and calculations obtained from the Mattis-Bardeen bulk model was generally very good. One aspect of the results which was not explained was the presence of a slight increase in the surface resistance in the vicinity of the transition temperature. The critical field measurements were compared to the (1 - (T/T/sub c/)/sup 1/2) dependence predicted by Bardeen. If it is assumed that substantial microwave heating took place in the sample near T/sub c/, then remarkable agreement with the Bardeen model can be reached

  3. Nanoporous metal film: An energy-dependent transmission device for electron waves

    Grech, S.; Degiovanni, A.; Lapena, L.; Morin, R.

    2011-01-01

    We measure electron transmission through free-standing ultrathin nanoporous gold films, using the coherent electron beam emitted by sharp field emission tips in a low energy electron projection microscope setup. Transmission coefficient versus electron wavelength plots show periodic oscillations between 75 and 850 eV. These oscillations result from the energy dependence of interference between paths through the gold and paths through the nanometer-sized pores of the film. We reveal that these films constitute high transmittance quantum devices acting on electron waves through a wavelength-dependent complex transmittance defined by the porosity and the thickness of the film.

  4. Radiation induced luminescence from a dipole immersed in a thin film

    Nkoma, J.S.

    1990-08-01

    Luminescence is modelled as electromagnetic radiation from a dipole immersed in a thin film. Maxwell's equations are solved for the cases when the dipole in the thin film is oriented normal and parallel to the interfaces. Expressions for emitted electric fields outside the thin film are derived and are found to have a resonant denominator that vanishes at the surface polariton excitation frequencies for a thin film. Luminescent spectra are plotted and peaks are found that are identified to be associated with both surface response and bulk response. Numerical results are presented to illustrate the model by considering a vacuum-GaP-sapphire system. (author). 9 refs, 5 figs

  5. Size effects under a strong magnetic field: transverse magnetoresistance of thin gold films deposited on mica

    Munoz, Raul C; HenrIquez, Ricardo; GarcIa, Juan Pablo; Moncada, Ana MarIa; Espinosa, Andres; Robles, Marcelo; Kremer, German; Moraga, Luis; Cancino, Simon; Morales, Jose Roberto; RamIrez, Adan; Oyarzun, Simon; Suarez, Marco Antonio; Chen, David; Zumelzu, Ernesto; Lizama, Claudio

    2006-01-01

    We report measurements of transverse magnetoresistance where the signal can be attributed to electron-surface scattering, together with measurements of the surface roughness of the films on an atomic scale. The measurements were performed with a scanning tunnelling microscope (STM) on four thin gold films evaporated onto mica. The magnetoresistance exhibits a marked thickness dependence: at 4 K and 9 T is about 5% for the thinner (69 nm) film, and about 14% for the thicker (185 nm) film. Sondheimer's theory provides an accurate description of the temperature dependence of the resistivity, but predicts a magnetoresistance one order of magnitude smaller than that observed at 4 K. Calecki's theory in the limit of small roughness correlation length, predicts a resistivity two orders of magnitude larger than observed at 4 K

  6. Matchline dosimetry in step and shoot IMRT fields: a film study

    Tangboonduangjit, P; Metcalfe, P; Butson, M; Quach, K Y; Rosenfeld, A

    2004-01-01

    The Varian millennium 120 multileaf collimator has curved leaf ends. Transmission through the leaf ends generates a small asymmetric penumbral dose effect. This design can lead to hot spots between neighbouring beam segments during step and shoot IMRT dose delivery. We have observed some matchlines with film for clinical beams optimized using the pinnacle radiotherapy treatment planning system; hence we sought to verify the optimum leaf offset required to minimize the matchline effect. An in-house program was created to control the MLC leaf banks in 2 cm steps with a 2 cm gap. The gap was varied by the following offset values from 0.0 to 0.1 cm. Two types of radiographic films (Kodak EDR and XV films) and a radiochromic film (Gafchromic MD-55-2) were used to measure the optical density maps. The films were positioned in a solid water phantom perpendicular to the beam axis and irradiated at d max using a 6 MV photon beam. An ion chamber (IC4) was used to measure point doses for normalization in a beam umbral minima position. The relative mean peak to valley dose ratios measured with no leaf offset were 1.31, 1.30 and 1.31 for the XV, EDR2 and Gafchromic films, respectively. For a 0.07 cm gap per leaf and a performance of end leaf repeatability of 0.01 cm, the central matchline was reduced to about 1.0 for all dosimeters, with two mini-peaks measured as 1.05, 1.05 and 1.08 each side of the matchline, for XV, EDR2 and Gafchromic, respectively. The average relative dose across the umbra for this offset was XO-mat V = 1.01, EDR = 1.01 and radiochromic film = 1.02, respectively. While we expected the beam penumbral tails from segment neighbours to cause overprediction of the dose in the central valley regions due to the energy response of radiographic films, by normalizing all dosimeters to an ion chamber reading in the minimum we could not observe any major shape distortion between the radiographic film and radiochromic film results. In conclusion, relative doses

  7. Domain Engineered Magnetoelectric Thin Films for High Sensitivity Resonant Magnetic Field Sensors

    2011-12-01

    band gap of highly textured PZT thin films. The deposition process variables were - argon and oxygen flows, chamber pressure, RF power (DC Bias...needed another parameter to equate with the number of unknowns in the resultant model equations. From Figure 24, electronic polarizability affects the... Polarizability and Optical dielectric response of a thin.film , ., ,__~--~---\\- 000 01’ "󈧶 Ots Tncnt.re"’°l Effective Polarizability = Reddy

  8. Temperature Dependence of Field-Effect Mobility in Organic Thin-Film Transistors: Similarity to Inorganic Transistors.

    Okada, Jun; Nagase, Takashi; Kobayashi, Takashi; Naito, Hiroyoshi

    2016-04-01

    Carrier transport in solution-processed organic thin-film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8-BTBT) has been investigated in a wide temperature range from 296 to 10 K. The field-effect mobility shows thermally activated behavior whose activation energy becomes smaller with decreasing temperature. The temperature dependence of field-effect mobility found in C8-BTBT is similar to that of others materials: organic semiconducting polymers, amorphous oxide semiconductors and hydrogenated amorphous silicon. These results indicate that hopping transport between isoenergetic localized states becomes dominated in a low temperature regime in these materials.

  9. Mixed hyperfine interaction in amorphous Fe-Zr sputtered films in external magnetic field - a 57Fe Moessbauer study

    Fries, S.M.; Crummenauer, J.; Wagner, H.-G.; Gonser, U.; Chien, C.L.

    1986-01-01

    Conventional 57 Fe-Moessbauer spectroscopy provides only information about the magnitude of the splitting QS in the case of electric quadrupole hyperfine interaction, but not on the sign of the main component of the electric field gradient (EFG) or the asymmetry parameter which are sensitive to the local environment of the 57 Fe nuclei. This kind of information is obtained by measurements in external magnetic fields. In the case of amorphous Fe-Zr sputtered films mixed hyperfine interaction leads to a clear change in the behaviour of the Zr-rich and the Fe-rich alloys, indicating the existence of magnetic clusters in the Fe-rich samples. (Auth.)

  10. Stray field signatures of Néel textured skyrmions in Ir/Fe/Co/Pt multilayer films

    Yagil, A.; Almoalem, A.; Soumyanarayanan, Anjan; Tan, Anthony K. C.; Raju, M.; Panagopoulos, C.; Auslaender, O. M.

    2018-05-01

    Skyrmions are nanoscale spin configurations with topological properties that hold great promise for spintronic devices. Here, we establish their Néel texture, helicity, and size in Ir/Fe/Co/Pt multilayer films by constructing a multipole expansion to model their stray field signatures and applying it to magnetic force microscopy images. Furthermore, the demonstrated sensitivity to inhomogeneity in skyrmion properties, coupled with a unique capability to estimate the pinning force governing dynamics, portend broad applicability in the burgeoning field of topological spin textures.

  11. Amplitude-phase characteristics of electromagnetic fields diffracted by a hole in a thin film with realistic optical properties

    Dorofeyev, Illarion

    2009-03-01

    Characteristics of a quasi-spherical wave front of an electromagnetic field diffracted by a subwavelength hole in a thin film with real optical properties are studied. Related diffraction problem is solved in general by use of the scalar and vector Green's theorems and related Green's function of a boundary-value problem. Local phase deviations of a diffracted wave front from an ideal spherical front are calculated. Diffracted patterns are calculated for the coherent incident fields in case of holes array in a screen of perfect conductivity.

  12. Experimental study on flow characteristics of a vertically falling film flow of liquid metal NaK in a transverse magnetic field

    Li Fengchen; Serizawa, Akimi

    2004-01-01

    Experimental study was carried out on the characteristics of a vertically falling film flow of liquid metal sodium-potassium alloy (NaK-78) in a vertical square duct in the presence of a transverse magnetic field. The magnitude of the applied magnetic field was up to 0.7 T. The Reynolds number, defined by the hydraulic diameter based on the wetted perimeter length and the liquid average velocity, ranged from 8.0x10 3 to 3.0x10 4 . The free surfaces of the falling film flows in both a stainless steel and an acrylic resin channels were visualized. The instantaneous film thickness of the falling film flow in the acrylic resin channel was then measured by means of the ultrasonic transmission technique. Magnetohydrodynamic (MHD) effects on the characteristics of the falling film flow were investigated by the visualization and the statistical analysis of the measured film thickness. It was found that the falling liquid NaK film was thickened and the flow was stabilized remarkably by a strong transverse magnetic field. A bifurcation of the film was recovered by the applied magnetic field. The turbulence of the flow was substantially suppressed

  13. Top emitting white OLEDs

    Freitag, Patricia; Luessem, Bjoern; Leo, Karl [Technische Universitaet Dresden, Institut fuer Angewandte Photophysik, George-Baehr-Strasse 1, 01069 Dresden (Germany)

    2009-07-01

    Top emitting organic light emitting diodes (TOLEDs) provide a number of interesting opportunities for new applications, such as the opportunity to fabricate ITO-free devices by using opaque substrates. This makes it possible to manufacture low cost OLEDs for signage and lighting applications. A general top emitting device consists of highly reflecting metal contacts as anode and semitransparent cathode, the latter one for better outcouling reasons. In between several organic materials are deposited as charge transporting, blocking, and emission layers. Here, we show a top emitting white organic light emitting diode with silver electrodes arranged in a p-i-n structure with p- and n-doped charge transport layers. The centrical emission layer consists of two phosphorescent (red and green) and one fluorescent (blue) emitter systems separated by an ambipolar interlayer to avoid mutual exciton quenching. By adding an additional dielectric capping layer on top of the device stack, we achieve a reduction of the strong microcavity effects which appear due to the high reflection of both metal electrodes. Therefore, the outcoupled light shows broad and nearly angle-independent emission spectra, which is essential for white light emitting diodes.

  14. Application of Surface Plasmonics for Semiconductor Light-Emitting Diodes

    Fadil, Ahmed

    This thesis addresses the lack of an efficient semiconductor light source at green emission colours. Considering InGaN based quantum-well (QW) light-emitters and light-emitting diodes (LEDs), various ways of applying surface plasmonics and nano-patterning to improve the efficiency, are investigated....... By placing metallic thin films or nanoparticles (NPs) in the near-field of QW light-emitters, it is possible to improve their internal quantum efficiency (IQE) through the Purcell enhancement effect. It has been a general understanding that in order to achieve surface plasmon (SP) coupling with QWs......-QW coupling does not necessarily lead to emission enhancement. The findings of this work show that the scattering and absorption properties of NPs play a crucial role in determining whether the implementation will improve or degrade the optical performance. By applying these principles, a novel design...

  15. Effect of large compressive strain on low field electrical transport in La0.88Sr0.12MnO3 thin films

    Prasad, Ravikant; Gaur, Anurag; Siwach, P K; Varma, G D; Kaur, A; Singh, H K

    2007-01-01

    We have investigated the effect of large in-plane compressive strain on the electrical transport in La 0.88 Sr 0.12 MnO 3 in thin films. For achieving large compressive strain, films have been deposited on single crystal LaAlO 3 (LAO, a = 3.798 A) substrate from a polycrystalline bulk target having average in-plane lattice parameter a av = (a b + b b )/2 = 3.925 A. The compressive strain was further relaxed by varying the film thickness in the range ∼6-75 nm. In the film having least thickness (∼6 nm) large increase (c = 3.929 A) in the out-of-plane lattice parameter is observed which gradually decreases towards the bulk value (c bulk = 3.87 A) for ∼75 nm thick film. This shows that the film having the least thickness is under large compressive strain, which partially relaxes with increasing film thickness. The T IM of the bulk target ∼145 K goes up to ∼235 K for the ∼6 nm thin film and even for partially strain relaxed ∼75 nm thick film T IM is as high as ∼200 K. This enhancement in T IM is explained in terms of suppression of Jahn-Teller distortion of the MnO 6 octahedra by the large in-plane compressive strain. We observe a large enhancement in the low field magnetoresistance (MR) just below T IM in the films having partial strain relaxation. Thick films of 6 and 20 nm have MR ∼14% at 3 kOe that almost doubles in 35 nm film to ∼27%. Similar enhancement is also obtained in the case of the temperature coefficient of resistivity. The near doubling of low field MR is explained in terms of delocalization of weakly localized carriers around T IM by small magnetic fields

  16. Magnetic field induced changes in linear and nonlinear optical properties of Ti incorporated Cr2O3 nanostructured thin film

    Baraskar, Priyanka; Chouhan, Romita; Agrawal, Arpana; Choudhary, R. J.; Sen, Pranay K.; Sen, Pratima

    2018-03-01

    We report the magnetic field effect on the linear and nonlinear optical properties of pulse laser ablated Ti-incorporated Cr2O3 nanostructured thin film. Optical properties have been experimentally analyzed under Voigt geometry by performing ultraviolet-visible spectroscopy and closed aperture Z-scan technique using a continuous wave He-Ne laser source. Nonlinear optical response reveals a single peak-valley feature in the far field diffraction pattern in absence of magnetic field (B = 0) confirming self-defocussing effect. This feature switches to a valley-peak configuration for B = 5000G, suggesting self-focusing effect. For B ≤ 750G, oscillations were observed revealing the occurrence of higher order nonlinearity. Origin of nonlinearity is attributed to the near resonant d-d transitions observed from the broad peak occurring around 2 eV. These transitions are of magnetic origin and get modified under the application of external magnetic field. Our results suggest that magnetic field can be used as an effective tool to monitor the sign of optical nonlinearity and hence the thermal expansion in Ti-incorporated Cr2O3 nanostructured thin film.

  17. Relationships between carbon fluxes and environmental factors in a drip-irrigated, film-mulched cotton field in arid region.

    Xiaoyu Li

    Full Text Available Environmental factors and human activities play important roles in carbon fixation and emissions generated from croplands. Eddy covariance measurements in a drip-irrigated, film-mulched cotton field were used to analyze the relationships between carbon fluxes and environmental factors in Wulanwusu, northern Xinjiang, an arid region of Northwest China. Our results showed that the cumulative net carbon flux (NEE was -304.8 g C m-2 (a strong sink over the whole cotton growing season in 2012, which was more than that in cotton cropland without plastic film mulching and drip-irrigation. Moreover, when time is scaled up from a half-hour to a month, the correlations of gross primary production (GPP to air temperature (Tair, net solar radiation (Rn and soil water content (SWC gradually become stronger due to ecosystem resistance and resilience as well as the protection of plastic film mulching. The GPP is more strongly correlated with Rn than Tair at time scales from minutes to days, while it reverses at time scales from days to weeks. This outcome is largely determined by the biochemical characteristics of photosynthesis. SWC and vapor pressure deficit (VPD at all time scales are weakly correlated with GPP because plastic film mulching and regularly drip-irrigation allow soil to maintain sufficient water.

  18. Effects of electric-field-induced piezoelectric strain on the electronic transport properties of La0.9Ce0.1MnO3 thin films

    Zheng, R.K.; Dong, S.N.; Wu, Y.Q.; Zhu, Q.X.; Wang, Y.; Chan, H.L.W.; Li, X.M.; Luo, H.S.; Li, X.G.

    2012-01-01

    The authors constructed multiferroic structures by growing La 0.9 Ce 0.1 MnO 3 (LCEMO) thin films on piezoelectric 0.68Pb(Mg 1/3 Nb 2/3 )O 3 –0.32PbTiO 3 (PMN-PT) single-crystal substrates. Due to the efficient elastic coupling at the interface, the electric-field-induced piezoelectric strain in PMN-PT substrates is effectively transferred to LCEMO films and thus, leads to a decrease in the resistance and an increase in the magnetoresistance of the films. Particularly, it was found that the resistance-strain coefficient [(ΔR/R) film /(Δε zz ) film ] of the LCEMO film was considerably enhanced by the application of magnetic fields, demonstrating strong coupling between the lattice and the spin degrees of freedom. (ΔR/R) film /(Δε zz ) film at 122 K was enhanced by ∼ 28.8% by a magnetic field of 1.2 T. An analysis of the overall results demonstrates that the phase separation is crucial to understand strain-mediated modulation of electronic transport properties of manganite film/PMN-PT multiferroic structures. - Highlights: ► La 0.9 Ce 0.1 Mn O3 films were epitaxially grown on piezoelectric single crystals. ► Piezoelectric strain influences the electronic transport properties of films. ► Magnetic field enhances the piezoelectric strain effect. ► Phase separation is crucial to understand the piezoelectric strain effect.

  19. The interplay between wetting and phase behaviour in binary polymer films and wedges: Monte Carlo simulations and mean field calculations

    Mueller, M; Binder, K

    2005-01-01

    By confining a binary mixture, one can profoundly alter its miscibility behaviour. The qualitative features of miscibility in confined geometry are rather universal and are shared by polymer mixtures as well as small molecules, but the unmixing transition in the bulk and the wetting transition are typically well separated in polymer blends. We study the interplay between wetting and miscibility of a symmetric polymer mixture via large scale Monte Carlo simulations in the framework of the bond fluctuation model and via numerical self-consistent field calculations. The film surfaces interact with the monomers via short-ranged potentials, and the wetting transition of the semi-infinite system is of first order. It can be accurately located in the simulations by measuring the surface and interface tensions and using Young's equation. If both surfaces in a film attract the same component, capillary condensation occurs and the critical point is close to the critical point of the bulk. If surfaces attract different components, an interface localization/delocalization occurs which gives rise to phase diagrams with two critical points in the vicinity of the pre-wetting critical point of the semi-infinite system. The crossover between these two types of phase diagrams as a function of the surface field asymmetry is studied. We investigate the dependence of the phase diagram on the film width Δ for antisymmetric surface fields. Upon decreasing the film width the two critical points approach the symmetry axis of the phase diagram, and below a certain width, Δ tri , there remains only a single critical point at symmetric composition. This corresponds to a second order interface localization/delocalization transition even though the wetting transition is of first order. At a specific film width, Δ tri , tricritical behaviour is found. The behaviour of antisymmetric films is compared with the phase behaviour in an antisymmetric double wedge. While the former is the analogy of

  20. Tunable field emission characteristics of ZnO nanowires coated with varied thickness of lanthanum boride thin films

    Zhao, C.X.; Li, Y.F.; Chen, Jun; Deng, S.Z.; Xu, N.S.

    2013-01-01

    Lanthanum boride (LaB x ) thin films with various thicknesses were deposited on ZnO nanowire arrays by electron beam evaporation. Field emission characteristics of ZnO nanowires show close dependence on LaB x coating thickness. The turn-on field increases with increasing LaB x coating thickness from 10 nm to 50 nm. The observed phenomena were explained by a model that the tunneling at ZnO/LaB x interface dominates the emission process. - Highlights: ► Coating thickness dependence of field emission characteristics of ZnO nanowires was observed from LaB x coated ZnO nanowires. ► More stable field emission was observed from ZnO nanowires with LaB x coating. ► A model was proposed that the tunneling at ZnO/LaB x interface dominates the emission process

  1. Field-induced surface passivation of p-type silicon by using AlON films

    Ghosh, S.N.; Parm, I.O.; Dhungel, S.K.; Jang, K.S.; Jeong, S.W.; Yoo, J.; Hwang, S.H.; Yi, J. [School of Information and Communication Engineering, Sungkyunkwan University, 300 Chunchun dong, Jangan-gu, Suwon-440746 (Korea)

    2008-02-15

    In the present work, we report on the evidence for a high negative charge density in aluminum oxynitride (AlON) coating on silicon. A comparative study was carried out on the composition and electrical properties of AlON and aluminum nitride (AlN). AlON films were deposited on p-type Si (1 0 0) substrate by RF magnetron sputtering using a mixture of argon and oxygen gases at substrate temperature of 300 C. The electrical properties of the AlON, AlN films were studied through capacitance-voltage (C-V) characteristics of metal-insulator-semiconductor (MIS) using the films as insulating layers. The flatband voltage shift V{sub FB} observed for AlON is around 4.5 V, which is high as compared to the AlN thin film. Heat treatment caused the V{sub FB} reduction to 3 V, but still the negative charge density was observed to be very high. In the AlN film, no fixed negative charge was observed at all. The XRD spectrum of AlON shows the major peaks of AlON (2 2 0) and AlN (0 0 2), located at 2{theta} value of 32.96 and 37.8 , respectively. The atomic percentage of Al, N in AlN film was found to be 42.5% and 57.5%, respectively. Atomic percentages of Al, N and O in EDS of AlON film are 20.21%, 27.31% and 52.48%, respectively. (author)

  2. Effects of the shape anisotropy and biasing field on the magnetization reversal process of the diamond-shaped NiFe nano films

    Xu, Sichen; Yin, Jianfeng; Tang, Rujun; Zhang, Wenxu; Peng, Bin; Zhang, Wanli

    2017-11-01

    The effects of the planar shape anisotropy and biasing field on the magnetization reversal process (MRP) of the diamond-shaped NiFe nano films have been investigated by micromagnetic simulations. Results show that when the length to width ratio (LWR) of the diamond-shaped film is small, the MRP of the diamond-shaped films are sensitive to LWR. But when LWR is larger than 2, a stable domain switching mode is observed which nucleates from the center of the diamond and then expands to the edges. At a fixed LWR, the magnitude of the switching fields decrease with the increase of the biasing field, but the domain switching mode is not affected by the biasing field. Further analysis shows that demagnetization energy dominates over the MRP of the diamond-shaped films. The above LWR dependence of MRP can be well explained by a variation of the shape anisotropic factor with LWR.

  3. A multiscale coupled finite-element and phase-field framework to modeling stressed grain growth in polycrystalline thin films

    Jamshidian, M., E-mail: jamshidian@cc.iut.ac.ir [Department of Mechanical Engineering, Isfahan University of Technology, Isfahan 84156-83111 (Iran, Islamic Republic of); Institute of Structural Mechanics, Bauhaus-University Weimar, Marienstrasse 15, 99423 Weimar (Germany); Thamburaja, P., E-mail: prakash.thamburaja@gmail.com [Department of Mechanical & Materials Engineering, Universiti Kebangsaan Malaysia (UKM), Bangi 43600 (Malaysia); Rabczuk, T., E-mail: timon.rabczuk@tdt.edu.vn [Division of Computational Mechanics, Ton Duc Thang University, Ho Chi Minh City (Viet Nam); Faculty of Civil Engineering, Ton Duc Thang University, Ho Chi Minh City (Viet Nam)

    2016-12-15

    A previously-developed finite-deformation- and crystal-elasticity-based constitutive theory for stressed grain growth in cubic polycrystalline bodies has been augmented to include a description of excess surface energy and grain-growth stagnation mechanisms through the use of surface effect state variables in a thermodynamically-consistent manner. The constitutive theory was also implemented into a multiscale coupled finite-element and phase-field computational framework. With the material parameters in the constitutive theory suitably calibrated, our three-dimensional numerical simulations show that the constitutive model is able to accurately predict the experimentally-determined evolution of crystallographic texture and grain size statistics in polycrystalline copper thin films deposited on polyimide substrate and annealed at high-homologous temperatures. In particular, our numerical analyses show that the broad texture transition observed in the annealing experiments of polycrystalline thin films is caused by grain growth stagnation mechanisms. - Graphical abstract: - Highlights: • Developing a theory for stressed grain growth in polycrystalline thin films. • Implementation into a multiscale coupled finite-element and phase-field framework. • Quantitative reproduction of the experimental grain growth data by simulations. • Revealing the cause of texture transition to be due to the stagnation mechanisms.

  4. Photosynthates as dominant source of CH4 and CO2 in soil water and CH4 emitted to the atmosphere from paddy fields

    Minoda, Tomomi; Kimura, Mamoto; Wada, Eitaro

    1996-09-01

    Emission rates of CH4 from paddy soil with and without rice straw applications were measured with pot experiments to estimate the contribution of rice straw to the total CH4 emission during the growth period of rice plants. The CH4 derived from rice straw was calculated to be 44% of the total emission. 13CO2 uptake experiments were also carried out four times from June 30 to September 13, 1994, to estimate the contribution of photosynthesized carbon to CH4 emission. The contribution percentages of photosynthesized carbon to the total CH4 emitted to the atmosphere were 3.8% around June 30, 31% around July 25, 30% around August 19, and 14% around September 13 in the treatment with rice straw applications, and 52% around July 25, 28% around August 19, and 15% around September 13 in the treatment without rice straw applications. They were calculated to be 22% and 29% for the entire growth period in the treatments with and without rice straw applications, respectively. The contribution percentages of photosynthesized carbon to the total CH4 and inorganic carbon (Σ CO2) dissolved in soil water were 1.3%, 30%, 29%, and 34% for dissolved CH4 and 3.0%, 36%, 30% and 28% for dissolved inorganic carbon around June 30, July 25, August l9, and September 13, respectively, in the treatment with rice straw applications. They were 70%, 23%, and 32% for dissolved CH4 and 31%, 16%, and 19% for dissolved inorganic carbon around July 25, August 19, and September 13, respectively, in the treatment without rice straw applications.

  5. Electric Field Induce Blue Shift and Intensity Enhancement in 2D Exciplex Organic Light Emitting Diodes; Controlling Electron-Hole Separation.

    Al Attar, Hameed A; Monkman, Andy P

    2016-09-01

    A simple but novel method is designed to study the characteristics of the exciplex state pinned at a donor-acceptor abrupt interface and the effect an external electric field has on these excited states. The reverse Onsager process, where the field induces blue-shifted emission and increases the efficiency of the exciplex emission as the e-h separation reduces, is discussed. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Unsteady three dimensional flow of Casson liquid film over a porous stretching sheet in the presence of uniform transverse magnetic field and suction/injection

    Maity, S., E-mail: susantamaiti@gmail.com [Department of Mathematics, National Institute of Technology, Arunachal Pradesh, Yupia, Papumpare 791112 (India); Singh, S.K. [Engineering Mechanics Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India); Kumar, A.V. [Department of Mathematics, National Institute of Technology, Arunachal Pradesh, Yupia, Papumpare 791112 (India)

    2016-12-01

    Three dimensional flow of thin Casson liquid film over a porous unsteady stretching sheet is investigated under assumption of initial uniform film thickness. The effects of the uniform transverse magnetic field, suction and injection are also considered for investigation. The nonlinear governing set of equations and film evolution equation are solved analytically by using singular perturbation technique. It is found that the film thickness decreases with the increasing values of the Casson parameter. The Hartmann number and porosity parameter resist the film thinning process. It is also observed that the film thickness increases with the increasing values of the suction velocity whereas it decreases for increasing values of the injection velocity at the stretching surface.

  7. Population-based mammography screening: comparison of screen-film and full-field digital mammography with soft-copy reading--Oslo I study.

    Skaane, Per; Young, Kari; Skjennald, Arnulf

    2003-12-01

    To compare screen-film and full-field digital mammography with soft-copy reading in a population-based screening program. Full-field digital and screen-film mammography were performed in 3,683 women aged 50-69 years. Two standard views of each breast were acquired with each modality. Images underwent independent double reading with use of a five-point rating scale for probability of cancer. Recall rates and positive predictive values were calculated. Cancer detection rates determined with both modalities were compared by using the McNemar test for paired proportions. Retrospective side-by-side analysis for conspicuity of cancers was performed by an external independent radiologist group with experience in both modalities. In 3,683 cases, 31 cancers were detected. Screen-film mammography depicted 28 (0.76%) malignancies, and full-field digital mammography depicted 23 (0.62%) malignancies. The difference between cancer detection rates was not significant (P =.23). The recall rate for full-field digital mammography (4.6%; 168 of 3,683 cases) was slightly higher than that for screen-film mammography (3.5%; 128 of 3,683 cases). The positive predictive value based on needle biopsy results was 46% for screen-film mammography and 39% for full-field digital mammography. Side-by-side image comparison for cancer conspicuity led to classification of 19 cancers as equal for probability of malignancy, six cancers as slightly better demonstrated at screen-film mammography, and six cancers as slightly better demonstrated at full-field digital mammography. There was no statistically significant difference in cancer detection rate between screen-film and full-field digital mammography. Cancer conspicuity was equal with both modalities. Full-field digital mammography with soft-copy reading is comparable to screen-film mammography in population-based screening.

  8. Verification of absorbed dose rates in reference beta radiation fields: measurements with an extrapolation chamber and radiochromic film

    Reynaldo, S. R. [Development Centre of Nuclear Technology, Posgraduate Course in Science and Technology of Radiations, Minerals and Materials / CNEN, Av. Pte. Antonio Carlos 6627, 31270-901 Belo Horizonte, Minas Gerais (Brazil); Benavente C, J. A.; Da Silva, T. A., E-mail: sirr@cdtn.br [Development Centre of Nuclear Technology / CNEN, Av. Pte. Antonio Carlos 6627, 31270-901 Belo Horizonte, Minas Gerais (Brazil)

    2015-10-15

    Beta Secondary Standard 2 (Bss 2) provides beta radiation fields with certified values of absorbed dose to tissue and the derived operational radiation protection quantities. As part of the quality assurance, metrology laboratories are required to verify the reliability of the Bss-2 system by performing additional verification measurements. In the CDTN Calibration Laboratory, the absorbed dose rates and their angular variation in the {sup 90}Sr/{sup 90}Y and {sup 85}Kr beta radiation fields were studied. Measurements were done with a 23392 model PTW extrapolation chamber and with Gafchromic radiochromic films on a PMMA slab phantom. In comparison to the certificate values provided by the Bss-2, absorbed dose rates measured with the extrapolation chamber differed from -1.4 to 2.9% for the {sup 90}Sr/{sup 90}Y and -0.3% for the {sup 85}Kr fields; their angular variation showed differences lower than 2% for incidence angles up to 40-degrees and it reached 11% for higher angles, when compared to ISO values. Measurements with the radiochromic film showed an asymmetry of the radiation field that is caused by a misalignment. Differences between the angular variations of absorbed dose rates determined by both dosimetry systems suggested that some correction factors for the extrapolation chamber that were not considered should be determined. (Author)

  9. Absolute and convective instabilities of a film flow down a vertical fiber subjected to a radial electric field

    Liu, Rong; Chen, Xue; Ding, Zijing

    2018-01-01

    We consider the motion of a gravity-driven flow down a vertical fiber subjected to a radial electric field. This flow exhibits rich dynamics including the formation of droplets, or beads, driven by a Rayleigh-Plateau mechanism modified by the presence of gravity as well as the Maxwell stress at the interface. A spatiotemporal stability analysis is performed to investigate the effect of electric field on the absolute-convective instability (AI-CI) characteristics. We performed a numerical simulation on the nonlinear evolution of the film to examine the transition from CI to AI regime. The numerical results are in excellent agreement with the spatiotemporal stability analysis. The blowup behavior of nonlinear simulation predicts the formation of touchdown singularity of the interface due to the effect of electric field. We try to connect the blowup behavior with the AI-CI characteristics. It is found that the singularities mainly occur in the AI regime. The results indicate that the film may have a tendency to form very sharp tips due to the enhancement of the absolute instability induced by the electric field. We perform a theoretical analysis to study the behaviors of the singularities. The results show that there exists a self-similarity between the temporal and spatial distances from the singularities.

  10. Experimental comparison of profiles of acquired small fields with ionization chambers, diodes, radiochromic s and TLD films

    Venencia, D.; Garrigo, E.; Filipuzzi, M.; Germanier, A.

    2014-08-01

    The use of radiation small fields, introduced by new techniques, can bring a considerable uncertainty in the precision of the acquired profiles, due to the conditions of lateral electronic non-equilibrium and the perturbations introduced by the detectors (volume effect and alteration of the charged particles flowing) [Das et al., 2007]. The development of new miniature detectors looks to diminish the uncertainty created by the material and the size of the sensitive volume of the dosimeter. For this reason, comparative measurements for three sizes of square field were carried out (20 mm, 10 mm and 5 mm, of side) using a detectors series: 3 ionization chambers (PTW-31003, IBA-CC04, PTW-31016), 2 diodes (PTW-60012, IBA-Sfd), thermoluminescent detectors micro-cubes of 1 mm of edge (TLD-700) and radiochromic s films EBT-3. These last two were used as reference detectors, due to their spatial high resolution and similar performance with Monte Carlo simulations [Francescon et al., 1998]. So much the thermoluminescent detectors as the radiochromic films resolved the profiles in a similar way. Both diodes responded correctly, but the rest of the detectors overestimated the gloom of the fields, which allows conclude that the used TLD (and both diodes) can resolve field sizes correctly, usually utilized in radio-surgery, without producing significant alterations in the acquired data. (author)

  11. Temperature dependence of coercive field and fatigue in poly(vinylidene fluoride-trifluoroethylene) copolymer ultra-thin films

    Zhang Xiuli; Xu Haisheng; Zhang Yanni

    2011-01-01

    The experimental intrinsic coercive field of ferroelectric poly(vinylidene fluoride-trifluoethylene) copolymer films, with both bottom and top gold electrodes is measured at a wide temperature range. In the lower temperature region from -20 to 25 deg. C, the temperature dependence of coercive field shows good agreement with the prediction by the Landau-Ginzburg (LG) mean-field theory. In the higher temperature region from 25 to 80 deg. C, the coercive field shows a slow decrease with the increased temperature, where the LG theory is not applicable any more. The temperature-dependent changes in the polymer chains have been analysed. A reversible 'inherent fatigue' is observed from the partially recovered remanent polarization after re-annealing a fatigued P(VDF-TrFE) film. FTIR spectra indicate that the interchain spacing does not change from 10 to 10 7 switching cycles while the degree of all-trans ferroelectric phase decreases gradually with applied switching cycles. After a re-annealing treatment, ferroelectric phase recovers and dipoles at the boundary of crystallites acquire much higher energy.

  12. Verification of absorbed dose rates in reference beta radiation fields: measurements with an extrapolation chamber and radiochromic film

    Reynaldo, S. R.; Benavente C, J. A.; Da Silva, T. A.

    2015-10-01

    Beta Secondary Standard 2 (Bss 2) provides beta radiation fields with certified values of absorbed dose to tissue and the derived operational radiation protection quantities. As part of the quality assurance, metrology laboratories are required to verify the reliability of the Bss-2 system by performing additional verification measurements. In the CDTN Calibration Laboratory, the absorbed dose rates and their angular variation in the 90 Sr/ 90 Y and 85 Kr beta radiation fields were studied. Measurements were done with a 23392 model PTW extrapolation chamber and with Gafchromic radiochromic films on a PMMA slab phantom. In comparison to the certificate values provided by the Bss-2, absorbed dose rates measured with the extrapolation chamber differed from -1.4 to 2.9% for the 90 Sr/ 90 Y and -0.3% for the 85 Kr fields; their angular variation showed differences lower than 2% for incidence angles up to 40-degrees and it reached 11% for higher angles, when compared to ISO values. Measurements with the radiochromic film showed an asymmetry of the radiation field that is caused by a misalignment. Differences between the angular variations of absorbed dose rates determined by both dosimetry systems suggested that some correction factors for the extrapolation chamber that were not considered should be determined. (Author)

  13. Effect of Temperature and Electric Field on the Damping and Stiffness Characteristics of ER Fluid Short Squeeze Film Dampers

    H. P. Jagadish

    2013-01-01

    Full Text Available Squeeze film dampers are novel rotor dynamic devices used to alleviate small amplitude, large force vibrations and are used in conjunction with antifriction bearings in aircraft jet engine bearings to provide external damping as these possess very little inherent damping. Electrorheological (ER fluids are controllable fluids in which the rheological properties of the fluid, particularly viscosity, can be controlled in accordance with the requirements of the rotor dynamic system by controlling the intensity of the applied electric field and this property can be utilized in squeeze film dampers, to provide variable stiffness and damping at a particular excitation frequency. The paper investigates the effect of temperature and electric field on the apparent viscosity and dynamic (stiffness and damping characteristics of ER fluid (suspension of diatomite in transformer oil using the available literature. These characteristics increase with the field as the viscosity increases with the field. However, these characteristics decrease with increase in temperature and shear strain rate as the viscosity of the fluid decreases with temperature and shear strain rate. The temperature is an important parameter as the aircraft jet engine rotors are located in a zone of high temperature gradients and the damper fluid is susceptible to large variations in temperature.

  14. An Analysis of Characteristics of Magnetostatic Waves Propagating in Nonhomogeneous Fields Across the Ferrospinel Film Thickness

    Velikanova, Yu. V.; Vinogradova, M. R.; Mitlina, L. A.

    2018-06-01

    The amplitude-frequency characteristics (AFCs) of magnetostatic waves in the films of magnesium-manganese ferrospinels with nanostructured inhomogeneities are discussed. A common effect, observed in the film AFCs under different process conditions, is the `oscillations of propagation' of magnetostatic waves as a function of the frequency. The oscillation pattern is thought to depend on the inhomogeneous exchange parameters and the surface anisotropy constants. The wave instability is characterized by the resonant interaction of the dipole magnetostatic waves with the surface spin waves. It is shown that the ferrospinel films with periodic nanostructured inhomogeneities of 30-40 nm could be treated as magnon crystals. An inclusion of the inhomogeneity into consideration allows one to provide reasoning for the formation of the rejection bands within the range 9-12 GHz, whose frequencies correspond to Bragg frequencies.

  15. Comparison of field swept ferromagnetic resonance methods - A case study using Ni-Mn-Sn films

    Modak, R.; Samantaray, B.; Mandal, P.; Srinivasu, V. V.; Srinivasan, A.

    2018-05-01

    Ferromagnetic resonance spectroscopy is used to understand the magnetic behavior of Ni-Mn-Sn Heusler alloy film. Two popular experimental methods available for recording FMR spectra are presented here. In plane angular (φH) variation of magnetic relaxation is used to evaluate the in plane anisotropy (Ku) of the film. The out of plane (θH) variation of FMR spectra has been numerically analyzed to extract the Gilbert damping coefficient, effective magnetization and perpendicular magnetic anisotropy (K1). Magnetic homogeneity of the film had also been evaluated in terms of 2-magnon contribution from FMR linewidth. The advantage and limitations of these two popular FMR techniques are discussed on the basis of the results obtained in this comparative study.

  16. The quality of X-ray film processing. Report of a sensitometric field study

    Stargardt, A.; Buehler, G.

    1985-01-01

    One hundred and eighty of about 800 X-ray film processors used in the GDR were checked sensitometrically. Sensitometric control strips, pre-exposed at a certain level, were mailed, processed and re-mailed; fog, the density of a medium-density step and a density difference were then determined. Reference data were obtained by processing exactly according to the recommendations of the film manufacturer; the mean of fog measurements equals the reference value. Seven per cent of processors produced fog which was unacceptable. The mean of the medium density measurements was 10% below the reference value. Five per cent of all processors operated at unacceptably high, and 16% at unacceptably low, density. Since failures in processing are commonly compensated for by changing radiation doses, consequences for radiation exposure are obvious. Analysis of data on operating parameters supplied by the users identified the disproportion between developer replenisher rate and film load as the main reason for this unsatisfactory situation. (author)

  17. Tunability of the Quantum Spin Hall Effect in Bi(110) Films: Effects of Electric Field and Strain Engineering.

    Li, Sheng-Shi; Ji, Wei-Xiao; Li, Ping; Hu, Shu-Jun; Cai, Li; Zhang, Chang-Wen; Yan, Shi-Shen

    2017-06-28

    The quantum spin Hall (QSH) effect is promising for achieving dissipationless transport devices due to their robust gapless edge states inside insulating bulk gap. However, the currently discussed QSH insulators usually suffer from ultrahigh vacuum or low temperature due to the small bulk gap, which limits their practical applications. Searching for large-gap QSH insulators is highly desirable. Here, the tunable QSH state of a Bi(110) films with a black phosphorus (BP) structure, which is robust against structural deformation and electric field, is explored by first-principles calculations. It is found that the two-monolayer BP-Bi(110) film obtains a tunable large bulk gap by strain engineering and its QSH effect shows a favorable robustness within a wide range of combinations of in-plane and out-of-plane strains, although a single in-plane compression or out-of-plane extension may restrict the topological phase due to the self-doping effect. More interestingly, in view of biaxial strain, two competing physics on band topology induced by bonding-antibonding and p x,y -p z band inversions are obtained. Meanwhile, the QSH effect can be persevered under an electric field of up to 0.9 V/Å. Moreover, with appropriate in-plane strain engineering, a nontrivial topological phase in a four-monolayer BP-Bi(110) film is identified. Our findings suggest that these two-dimensional BP-Bi(110) films are ideal platforms of the QSH effect for low-power dissipation devices.

  18. Concept of dual-resolution light field imaging using an organic photoelectric conversion film for high-resolution light field photography.

    Sugimura, Daisuke; Kobayashi, Suguru; Hamamoto, Takayuki

    2017-11-01

    Light field imaging is an emerging technique that is employed to realize various applications such as multi-viewpoint imaging, focal-point changing, and depth estimation. In this paper, we propose a concept of a dual-resolution light field imaging system to synthesize super-resolved multi-viewpoint images. The key novelty of this study is the use of an organic photoelectric conversion film (OPCF), which is a device that converts spectra information of incoming light within a certain wavelength range into an electrical signal (pixel value), for light field imaging. In our imaging system, we place the OPCF having the green spectral sensitivity onto the micro-lens array of the conventional light field camera. The OPCF allows us to acquire the green spectra information only at the center viewpoint with the full resolution of the image sensor. In contrast, the optical system of the light field camera in our imaging system captures the other spectra information (red and blue) at multiple viewpoints (sub-aperture images) but with low resolution. Thus, our dual-resolution light field imaging system enables us to simultaneously capture information about the target scene at a high spatial resolution as well as the direction information of the incoming light. By exploiting these advantages of our imaging system, our proposed method enables the synthesis of full-resolution multi-viewpoint images. We perform experiments using synthetic images, and the results demonstrate that our method outperforms other previous methods.

  19. Radiation emitting devices regulations

    1970-01-01

    The Radiation Emitting Devices Regulations are the regulations referred to in the Radiation Emitting Devices Act and relate to the operation of devices. They include standards of design and construction, standards of functioning, warning symbol specifications in addition to information relating to the seizure and detention of machines failing to comply with the regulations. The radiation emitting devices consist of the following: television receivers, extra-oral dental x-ray equipment, microwave ovens, baggage inspection x-ray devices, demonstration--type gas discharge devices, photofluorographic x-ray equipment, laser scanners, demonstration lasers, low energy electron microscopes, high intensity mercury vapour discharge lamps, sunlamps, diagnostic x-ray equipment, ultrasound therapy devices, x-ray diffraction equipment, cabinet x-ray equipment and therapeutic x-ray equipment

  20. The use of ionic salt dyes as amorphous, thermally stable emitting layers in organic light-emitting diodes

    Chondroudis, Konstantinos; Mitzi, David B.

    2000-01-01

    The conversion of two neutral dye molecules (D) to ionic salts (H2N-D-NH2ṡ2HX) and their utilization as emitting layers in organic light-emitting diodes (OLEDs) is described. The dye salts, AEQTṡ2HCl and APTṡ2HCl, can be deposited as amorphous films using conventional evaporation techniques. X-ray diffraction and scanning electron microscopy analysis, coupled with thermal annealing studies, demonstrate the resistance of the films to crystallization. This stability is attributed to strong ionic forces between the relatively rigid molecules. OLEDs incorporating such salts for emitting layers exhibit better thermal stability compared with devices made from the corresponding neutral dyes (H2N-D-NH2). These results suggest that ionic salts may more generally enable the formation of thermally stable, amorphous emitting, and charge transporting layers.

  1. Excess hall effect in epitaxial YBCO film under moderate magnetic fields, approached by renormalized superconducting fluctuations model

    Puica, I.; Lang, W.; Goeb, W.; Sobolewski, R.

    2002-01-01

    Full text: Measurements of the Hall effect and the resistivity on precisely-patterned YBCO thin film in moderate magnetic fields B from 0.5 to 6 T oriented parallel to the crystallographic c axis reveal a sign reversal of the Hall coefficient for B < 3 T. The data are confronted with the full quantitative expressions given by the renormalized fluctuation model for the excess Hall conductivity. The model offers a satisfactory quantitative approach to the experimental results, for moderate fields and temperatures near the critical region, provided the inhomogeneity of the critical temperature distribution is also taken into account. For lower fields and temperatures, the adequacy of the model is altered by vortex pinning. (author)

  2. Migration from PVC cling films compared with their field of application

    Petersen, Jens Højslev; Lillemark, L.; Lund, L.

    1997-01-01

    Samples of PVC cling films were taken at importers, wholesalers and retail shops, and their overall migration to the alternative food simulant iso-octane was measured, after establishment of a correlation between overall migration to olive oil at 40 degrees C in 10 days and to iso-octane in 2 h...

  3. Preparation, microwave and magnetic field response of YBaCuO thin film microbridges

    Hauser, B.; Klopman, B.B.G.; Rogalla, Horst

    1989-01-01

    On YBaCuO thin films, which were deposited at ambient temperature and were superconducting after post-deposition annealing in oxygen, microbridges and d.c. superconducting quantium interference devices (SQUIDs) were constructed by lift-off. Over a temperature range from 4.2 to > 70 K the devices

  4. Design and fabrication of a 3D-structured gold film with nanopores for local electric field enhancement in the pore

    Grant-Jacob, James A; Zin Oo, Swe; Carpignano, Francesca; Brocklesby, William S; Melvin, Tracy; Boden, Stuart A; Charlton, Martin D B

    2016-01-01

    Three-dimensionally structured gold membrane films with nanopores of defined, periodic geometries are designed and fabricated to provide the spatially localised enhancement of electric fields by manipulation of the plasmons inside nanopores. Square nanopores of different size and orientation relative to the pyramid are considered for films in aqueous and air environments, which allow for control of the position of electric fields within the structure. Designs suitable for use with 780 nm light were created. Here, periodic pyramidal cavities produced by potassium hydroxide etching to the {111} planes of (100) silicon substrates are used as templates for creating a periodic, pyramidal structured, free-standing thin gold film. Consistent with the findings from the theoretical studies, a nano-sized hole of 50 nm square was milled through the gold film at a specific location in the cavity to provide electric field control which can subsequently used for enhancement of fluorescence or Raman scattering of molecules in the nanopore. (paper)

  5. Design and fabrication of a 3D-structured gold film with nanopores for local electric field enhancement in the pore

    Grant-Jacob, James A.; Zin Oo, Swe; Carpignano, Francesca; Boden, Stuart A.; Brocklesby, William S.; Charlton, Martin D. B.; Melvin, Tracy

    2016-02-01

    Three-dimensionally structured gold membrane films with nanopores of defined, periodic geometries are designed and fabricated to provide the spatially localised enhancement of electric fields by manipulation of the plasmons inside nanopores. Square nanopores of different size and orientation relative to the pyramid are considered for films in aqueous and air environments, which allow for control of the position of electric fields within the structure. Designs suitable for use with 780 nm light were created. Here, periodic pyramidal cavities produced by potassium hydroxide etching to the {111} planes of (100) silicon substrates are used as templates for creating a periodic, pyramidal structured, free-standing thin gold film. Consistent with the findings from the theoretical studies, a nano-sized hole of 50 nm square was milled through the gold film at a specific location in the cavity to provide electric field control which can subsequently used for enhancement of fluorescence or Raman scattering of molecules in the nanopore.

  6. Study on the enhanced and stable field emission behavior of a novel electrosprayed Al-doped ZnO bilayer film

    Mahmood, Khalid; Munir, Rahim; Swain, Bhabani Sankar; Han, Gill Sang; Kim, Byeong Jo; Jung, Hyun Suk

    2014-01-01

    A novel electrosprayed bilayer film composed of an over-layer (L 2) of aluminium-doped ZnO (AZO) nanoflakes (NF-AZO) and a under-layer (L1) of AZO nanocrystallites structure (NC-AZO) named BL:NF/NC-AZO is studied as an excellent field-emitter. The XRD pattern demonstrated that the doped bilayer film has preferential growth along the c-axis with hexagonal wurtzite structure and the (0 0 2) peak shifted toward the larger angle side after doping. The lowest turn-on field of ∼2.8 V μm-1, highest emission current density of 1.95 mA cm-2 is obtained for BL:NF/NC-AZO under the field of 6.8 V μm-1 and as well as the highest field enhancement factor (β) is estimated to be 4370 ± 3, compared to pure ZnO bilayer film (BL:NF/NC-ZnO) and also better than NC-AZO film and possesses the excellent long term stability of emission current. The PL intensity of doped ZnO bilayer film is very much stronger than pure ZnO bilayer structure. The superior field emission properties are attributed to the better morphologies, Al-doping and better crystallinity of bilayer AZO films. © 2014 The Royal Society of Chemistry.

  7. Field Emission from Carbon Nanostructures

    Filippo Giubileo

    2018-03-01

    Full Text Available Field emission electron sources in vacuum electronics are largely considered to achieve faster response, higher efficiency and lower energy consumption in comparison with conventional thermionic emitters. Carbon nanotubes had a leading role in renewing attention to field emission technologies in the early 1990s, due to their exceptional electron emitting properties enabled by their large aspect ratio, high electrical conductivity, and thermal and chemical stability. In the last decade, the search for improved emitters has been extended to several carbon nanostructures, comprising carbon nanotubes, either individual or films, diamond structures, graphitic materials, graphene, etc. Here, we review the main results in the development of carbon-based field emitters.

  8. High field properties of superconducting BaFe{sub 2-x}Ni{sub x}As{sub 2} thin films

    Richter, Stefan [Institute for Metallic Materials, IFW Dresden (Germany); Technical University Dresden (Germany); Kurth, Fritz; Grinenko, Vadim; Nielsch, Kornelius; Huehne, Ruben [Institute for Metallic Materials, IFW Dresden (Germany); Iida, Kazumasa [Nagoya University (Japan); Pervakov, Kirill [Russian Academy of Sciences (Russian Federation); Tarantini, Chiara; Jaroszynski, Jan [National High Magnetic Field Laboratory (United States); Pukenas, Aurimas; Skrotzki, Werner [Technical University Dresden (Germany)

    2016-07-01

    Fe based superconductors combine the advantages of cuprates (high upper critical field) with the small Hc{sub 2} anisotropy of classic low temperature superconductors, which makes them suitable candidates for high field applications. The study of Fe-based superconducting thin films is one crucial step to explore this potential in more detail. We present results for epitaxial BaFe{sub 2-x}Ni{sub x}As{sub 2} thin films, which have been successfully grown for the first time using pulsed laser deposition. Superconducting transition temperatures of up to 19 K have been realized in slightly overdoped films, which is in good agreement with results obtained for single crystals. The behavior of the upper critical field and critical current density has been measured in high magnetic fields up to 35 T. The results will be correlated to the observed microstructure and compared to high field data for single crystals with similar composition.

  9. Light-Emitting Pickles

    Vollmer, M.; Mollmann, K-P.

    2015-01-01

    We present experiments giving new insights into the classical light-emitting pickle experiment. In particular, measurements of the spectra and temperatures, as well as high-speed recordings, reveal that light emission is connected to the polarity of the electrodes and the presence of hydrogen.

  10. Enhancement of the saturation mobility in a ferroelectric-gated field-effect transistor by the surface planarization of ferroelectric film

    Kim, Woo Young, E-mail: semigumi@kaist.ac.kr [Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1, Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Jeon, Gwang-Jae; Kang, In-Ku; Shim, Hyun Bin; Lee, Hee Chul [Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1, Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)

    2015-09-30

    Ferroelectricity refers to the property of a dielectric material to undergo spontaneous polarization which originates from the crystalline phase. Hence, ferroelectric materials have a certain degree of surface roughness when they are formed as a thin film. A high degree of surface roughness may cause unintended phenomena when the ferroelectric material is used in electronic devices. Specifically, the quality of subsequently deposited film could be affected by the rough surface. The present study reports that the surface roughness of ferroelectric polymer film can be reduced by a double-spin-coating method of a solution, with control of the solubility of the solution. At an identical thickness of 350 nm, double-spin-coated ferroelectric film has a root-mean-square roughness of only 3 nm, while for single-spin-coated ferroelectric film this value is approximately 16 nm. A ferroelectric-gated field-effect transistor was fabricated using the proposed double-spin-coating method, showing a maximum saturation mobility as much as seven-fold than that of a transistor fabricated with single-spin-coated ferroelectric film. The enhanced saturation mobility could be explained by the Poole–Frenkel conduction mechanism. The proposed method to reduce the surface roughness of ferroelectric film would be useful for high performance organic electronic devices, including crystalline-phase dielectric film. - Highlights: • Single and double-layer solution-processed polymer ferroelectric films were obtained. • Adjusting the solvent solubility allows making double-layer ferroelectric (DF) films. • The DF film has a smoother surface than single-layer ferroelectric (SF) film. • DF-gated transistor has faster saturation mobility than SF-based transistor. • Solvent solubility adjustment led to higher performance organic devices.

  11. Radiofrequency electromagnetic fields emitted from base stations of DECT cordless phones and the risk of glioma and meningioma (Interphone Study Group, Germany)

    Schüz, Joachim; Böhler, Eva; Schlehofer, Brigitte

    2006-01-01

    The objective of this study was to test the hypothesis that exposure to continuous low-level radiofrequency electromagnetic fields (RF EMFs) increases the risk of glioma and meningioma. Participants in a population-based case-control study in Germany on the risk of brain tumors in relation...... to cellular phone use were 747 incident brain tumor cases between the ages of 30 and 69 years and 1494 matched controls. The exposure measure of this analysis was the location of a base station of a DECT (Digital Enhanced Cordless Telecommunications) cordless phone close to the bed, which was used as a proxy...

  12. Far-infrared electrodynamics of thin superconducting NbN film in magnetic fields

    Šindler, Michal; Tesař, Roman; Koláček, Jan; Szabó, P.; Samuely, P.; Hašková, V.; Kadlec, Christelle; Kadlec, Filip; Kužel, Petr

    2014-01-01

    Roč. 27, č. 5 (2014), 1-8 ISSN 0953-2048 R&D Projects: GA ČR(CZ) GAP204/11/0015; GA MŠk(CZ) LD14060 Institutional support: RVO:68378271 Keywords : superconductivity * thin films * scanning tunneling spectroscopy * time-domain terahertz spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.325, year: 2014

  13. EXTRAPOLATION TECHNIQUES EVALUATING 24 HOURS OF AVERAGE ELECTROMAGNETIC FIELD EMITTED BY RADIO BASE STATION INSTALLATIONS: SPECTRUM ANALYZER MEASUREMENTS OF LTE AND UMTS SIGNALS.

    Mossetti, Stefano; de Bartolo, Daniela; Veronese, Ivan; Cantone, Marie Claire; Cosenza, Cristina; Nava, Elisa

    2017-04-01

    International and national organizations have formulated guidelines establishing limits for occupational and residential electromagnetic field (EMF) exposure at high-frequency fields. Italian legislation fixed 20 V/m as a limit for public protection from exposure to EMFs in the frequency range 0.1 MHz-3 GHz and 6 V/m as a reference level. Recently, the law was changed and the reference level must now be evaluated as the 24-hour average value, instead of the previous highest 6 minutes in a day. The law refers to a technical guide (CEI 211-7/E published in 2013) for the extrapolation techniques that public authorities have to use when assessing exposure for compliance with limits. In this work, we present measurements carried out with a vectorial spectrum analyzer to identify technical critical aspects in these extrapolation techniques, when applied to UMTS and LTE signals. We focused also on finding a good balance between statistically significant values and logistic managements in control activity, as the signal trend in situ is not known. Measurements were repeated several times over several months and for different mobile companies. The outcome presented in this article allowed us to evaluate the reliability of the extrapolation results obtained and to have a starting point for defining operating procedures. © The Author 2016. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  14. Extrapolation techniques evaluating 24 hours of average electromagnetic field emitted by radio base station installations: spectrum analyzer measurements of LTE and UMTS signals

    Mossetti, Stefano; Bartolo, Daniela de; Nava, Elisa; Veronese, Ivan; Cantone, Marie Claire; Cosenza, Cristina

    2017-01-01

    International and national organizations have formulated guidelines establishing limits for occupational and residential electromagnetic field (EMF) exposure at high-frequency fields. Italian legislation fixed 20 V/m as a limit for public protection from exposure to EMFs in the frequency range 0.1 MHz-3 GHz and 6 V/m as a reference level. Recently, the law was changed and the reference level must now be evaluated as the 24-hour average value, instead of the previous highest 6 minutes in a day. The law refers to a technical guide (CEI 211-7/E published in 2013) for the extrapolation techniques that public authorities have to use when assessing exposure for compliance with limits. In this work, we present measurements carried out with a vectorial spectrum analyzer to identify technical critical aspects in these extrapolation techniques, when applied to UMTS and LTE signals. We focused also on finding a good balance between statistically significant values and logistic managements in control activity, as the signal trend in situ is not known. Measurements were repeated several times over several months and for different mobile companies. The outcome presented in this article allowed us to evaluate the reliability of the extrapolation results obtained and to have a starting point for defining operating procedures. (authors)

  15. Field geometry dependence of magnetotransport in epitaxial La2/3Ca1/3MnO3 thin films

    Saldarriaga, W.; Baca, E.; Prieto, P.; Moran, O.; Grube, K.; Fuchs, D.; Schneider, R.

    2006-01-01

    In-plane and out-of-plane magnetoresistance measurements on epitaxial ∼200nm thin (001)-oriented films of high oxygen pressure DC-sputtering grown manganite La 2/3 Ca 1/3 MnO 3 were carried out. Single crystal (001)-SrTiO 3 substrates were used. The samples featured a Curie temperature T C ∼260K and a magnetic moment μ(T->0K)∼3μ B per Mn atom. Magnetocrystalline anisotropy with the easy axes lying on film plane was evidenced by recording the in-plane and out-of-plane magnetization loops at temperatures, below T C , in magnetic field strengths up to 5T. Evidence for anisotropic magnetotransport in these films was provided by electric measurements in a wide temperature range up to 6T magnetic field strengths applied both perpendicular and parallel to the film plane. In both applied magnetic field geometries, current and magnetic field were maintained perpendicular to each other. Neither low-field magnetoresistance nor large magnetoresistance hysteresis were observed on these samples, suggesting that the tensile strain imposed by the substrate in the first monolayers has partially been released. In addition, by rotating the sample 360 o around an axis parallel to film plane, in magnetic fields >=2T, a quadratic sinusoidal dependence of the magnetoresistance on the polar angle θ was observed. These results can be consistently interpreted using a generalized version of the theory of anisotropic magnetoresistance in transition-metal ferromagnets

  16. TH-CD-BRA-06: Magnetic Field Effects On Gafchromic-Film Response in MR-IGRT

    Reynoso, F; Curcuru, A; Green, O; Mutic, S; Santanam, L; Das, I

    2016-01-01

    Purpose: To investigate the effects of magnetic fields in radiochromic films (RCF). Magnetokinetic changes may affect crystal orientation and polymerization within active layer of RCF, these effects are investigated in Magnetic Resonance Image-guided Radiotherapy (MR-IGRT). Methods: Gafchromic EBT2 RCF were irradiated in a 30×30×30 cm 3 solid water phantom using a ViewRay MRIdian Co-60 MRI guided radiotherapy system (B=0.35 T). Fifteen 20.3×25.4 cm 2 EBT2 film sheets were placed at three different depths (d=0.5, 5 and 10 cm) and irradiated using 5 different treatment plans. The plans were computed using the MRIdian treatment planning system to deliver 2, 4, 6, 8, and 10 Gy at a depth of 10 cm. The films were scanned using an Epson Expression 10000 XL flat-bed document scanner in transmission mode. Films were processed before and after irradiation to obtain a net optical density (netOD) for each color channel separately. Scanning electron microscope (SEM) images were obtained to compare the active layer of selected samples. Results: The results show the red channel netOD decreases between 1.3–12.3 % (average of 5.95 %) for doses above 2.8 Gy, with a linear increase in this effect for higher doses. Green channel netOD showed similar results with a decrease between 1.2–10.5 % (average of 4.09 %) for doses above 3.5 Gy. Blue channel showed the weakest effect between 1.3–2.9 % (average of 1.94 %) for doses above 8.0 Gy. SEM images show changes in crystal orientation within active layer in RCF exposed in a magnetic field. Conclusion: The presence of a magnetic field affects crystal orientation and polymerization during irradiation, decreasing netOD by an average of 5.95 % in the red channel. The under response is dependent on dose and differs by up to 12.3 % at 17.6 Gy. The results show that magnetokinetic effects should be carefully considered in MR-IGRT.

  17. Studies of the composition, tribology and wetting behavior of silicon nitride films formed by pulsed reactive closed-field unbalanced magnetron sputtering

    Yao, Zh.Q.; Yang, P.; Huang, N.; Wang, J.; Wen, F.; Leng, Y.X.

    2006-01-01

    Silicon nitride films were formed by pulsed reactive closed-field unbalanced magnetron sputtering of high purity Si targets in an Ar-N 2 mixture. The effects of N 2 fraction on the chemical composition, and tribological and wetting behaviors were investigated. The films deposited at a high N 2 fraction were consistently N-rich. The surface microstructure changed from continuous granular surrounded by tiny void regions to a homogeneous and dense microstructure, and densitied as the N 2 fraction is increased. The as-deposited films have a relatively low friction coefficient and better wear resistance than 316L stainless steel under dry sliding friction and experienced only abrasive wear. The decreased surface roughness and increased nitrogen incorporation in the film give rise to increased contact angle with double-stilled water from 24 deg. to 49.6 deg. To some extent, the silicon nitride films deposited are hydrophilic in nature

  18. Growth of a single-wall carbon nanotube film and its patterning as an n-type field effect transistor device using an integrated circuit compatible process

    Shiau, S H; Gau, C [Institute of Aeronautics and Astronautics, and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan (China); Liu, C W; Dai, B T [National Nano Device Laboratories, No. 27, Nanke 3rd Road, Science-based Industrial Park, Hsin-shi, Tainan, Taiwan (China)], E-mail: gauc@mail.ncku.edu.tw

    2008-03-12

    This study presents the synthesis of a dense single-wall carbon nanotube (SWNT) network on a silicon substrate using alcohol as the source gas. The nanosize catalysts required are made by the reduction of metal compounds in ethanol. The key point in spreading the nanoparticles on the substrate, so that the SWNT network can be grown over the entire wafer, is making the substrate surface hydrophilic. This SWNT network is so dense that it can be treated like a thin film. Methods of patterning this SWNT film with integrated circuit compatible processes are presented and discussed for the first time in the literature. Finally, fabrication and characteristic measurements of a field effect transistor (FET) using this SWNT film are also demonstrated. This FET is shown to have better electronic properties than any other kind of thin film transistor. This thin film with good electronic properties can be readily applied in the processing of many other SWNT electronic devices.

  19. Room temperature ferromagnetism with large magnetic moment at low field in rare-earth-doped BiFeO₃ thin films.

    Kim, Tae-Young; Hong, Nguyen Hoa; Sugawara, T; Raghavender, A T; Kurisu, M

    2013-05-22

    Thin films of rare earth (RE)-doped BiFeO3 (where RE=Sm, Ho, Pr and Nd) were grown on LaAlO3 substrates by using the pulsed laser deposition technique. All the films show a single phase of rhombohedral structure with space group R3c. The saturated magnetization in the Ho- and Sm-doped films is much larger than the values reported in the literature, and is observed at quite a low field of 0.2 T. For Ho and Sm doping, the magnetization increases as the film becomes thinner, suggesting that the observed magnetism is mostly due to a surface effect. In the case of Nd doping, even though the thin film has a large magnetic moment, the mechanism seems to be different.

  20. Highly stable field emission from ZnO nanowire field emitters controlled by an amorphous indium–gallium–zinc-oxide thin film transistor

    Li, Xiaojie; Wang, Ying; Zhang, Zhipeng; Ou, Hai; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

    2018-04-01

    Lowering the driving voltage and improving the stability of nanowire field emitters are essential for them to be applied in devices. In this study the characteristics of zinc oxide (ZnO) nanowire field emitter arrays (FEAs) controlled by an amorphous indium–gallium–zinc-oxide thin film transistor (a-IGZO TFT) were studied. A low driving voltage along with stabilization of the field emission current were achieved. Modulation of field emission currents up to three orders of magnitude was achieved at a gate voltage of 0–32 V for a constant anode voltage. Additionally, a-IGZO TFT control can dramatically reduce the emission current fluctuation (i.e., from 46.11 to 1.79% at an emission current of ∼3.7 µA). Both the a-IGZO TFT and ZnO nanowire FEAs were prepared on glass substrates in our research, demonstrating the feasibility of realizing large area a-IGZO TFT-controlled ZnO nanowire FEAs.

  1. Field driven ferromagnetic phase nucleation and propagation from the domain boundaries in antiferromagnetically coupled perpendicular anisotropy films

    Hauet, Thomas; Gunther, Christian M.; Hovorka, Ondrej; Berger, Andreas; Im, Mi-Young; Fischer, Peter; Hellwig, Olav

    2008-12-09

    We investigate the reversal process in antiferromagnetically coupled [Co/Pt]{sub X-1}/{l_brace}Co/Ru/[Co/Pt]{sub X-1}{r_brace}{sub 16} multilayer films by combining magnetometry and Magnetic soft X-ray Transmission Microscopy (MXTM). After out-of-plane demagnetization, a stable one dimensional ferromagnetic (FM) stripe domain phase (tiger-tail phase) for a thick stack sample (X=7 is obtained), while metastable sharp antiferromagnetic (AF) domain walls are observed in the remanent state for a thinner stack sample (X=6). When applying an external magnetic field the sharp domain walls of the thinner stack sample transform at a certain threshold field into the FM stripe domain wall phase. We present magnetic energy calculations that reveal the underlying energetics driving the overall reversal mechanisms.

  2. Thermoelectric power in ultrathin films, quantum wires and carbon nanotubes under classically large magnetic field: Simplified theory and relative comparison

    Kumar, A.; Choudhury, S. [Electronics and Communication Engineering, Sikkim Manipal Institute of Technology, Majitar, East Sikkim 737 132 (India); Saha, S. [Electronics and Communication Engineering, Mallabhum Institute of Technology College Campus, Brajaradhanagar, P.O. Gosaipur, P.S. Bishnupur, District - Bankura 722 122 (India); Pahari, S. [Administration Department, Jadavpur University, Kolkata 700 032 (India); De, D. [Department of Computer Science Engineering, West Bengal University of Technology, BF 142, Sector 1, Kolkatta 700 064, West Bengal (India); Bhattacharya, S. [Nano Scale Device Research Laboratory, Center for Electronics Design and Technology, Indian Institute of Science, Bangalore 560 012 (India); Ghatak, K.P., E-mail: kamakhyaghatak@yahoo.co.i [Department of Electronic Science, University Calcutta, 92 Acharyya Prafulla Chandra Road, Kolkata 700 009 (India)

    2010-01-01

    We study the thermoelectric power under classically large magnetic field (TPM) in ultrathin films (UFs), quantum wires (QWs) of non-linear optical materials on the basis of a newly formulated electron dispersion law considering the anisotropies of the effective electron masses, the spin-orbit splitting constants and the presence of the crystal field splitting within the framework of k.p formalism. The results of quantum confined III-V compounds form the special cases of our generalized analysis. The TPM has also been studied for quantum confined II-VI, stressed materials, bismuth and carbon nanotubes (CNs) on the basis of respective dispersion relations. It is found taking quantum confined CdGeAs{sub 2}, InAs, InSb, CdS, stressed n-InSb and Bi that the TPM increases with increasing film thickness and decreasing electron statistics exhibiting quantized nature for all types of quantum confinement. The TPM in CNs exhibits oscillatory dependence with increasing carrier concentration and the signature of the entirely different types of quantum systems are evident from the plots. Besides, under certain special conditions, all the results for all the materials gets simplified to the well-known expression of the TPM for non-degenerate materials having parabolic energy bands, leading to the compatibility test.

  3. Scanning Hall-probe microscopy of a vortex and field fluctuations in La1.85Sr0.15CuO4 films

    Chang, A.M.; Hallen, H.D.; Hess, H.F.; Kwo, J.; Sudboe, A.; Kao, H.L.; Chang, T.Y.

    1992-01-01

    A high-resolution scanning Hall-probe microscope is used to spatially resolve vortices in high-temperature superconducting La 1.85 Sr 0.15 CuO 4 films. At low magnetic fields, a disordered vortex arrangement is observed. A fit to the surface field of an individual vortex is consistent with one flux quantum, and is used to determine the local penetration depth and its temperature dependence. At higher fields, magnetic fluctuations are observed and compared to a collective pinning model. For films grown with the c-axis tilted from the surface normal, oval vortices are observed. (orig.)

  4. Electric and magnetic fields effects on the transport properties of La0.5Ca0.5MnO3 thin films

    Villafuerte, M.; Duhalde, S.; Rubi, D.; Bridoux, G.; Heluani, S.; Sirena, M.; Steren, L.

    2004-01-01

    The insulator to metal transition in manganites can be drastically influenced by internal factors, such as chemical composition, or under a variety of external perturbations, like magnetic or electric fields. In this work, the electrical resistance of La 0.5 Ca 0.5 MnO 3 thin films was investigated using different constant voltages. At low temperature the conductivity of the films is non-Ohmic and moderate electric fields results in resistivity switching to metastable states. Comparisons between the influence of magnetic and electric fields on transport measurements are reported

  5. SU-E-T-746: The Use of Radiochromic Film Analyzed with Three Channel Dosimetry as a Secondary Patient-Specific QA Tool for Small SBRT Fields

    Hadsell, M; Holcombe, C; Chin, E; Hsu, A

    2015-01-01

    Introduction: As diagnostic techniques become more sensitive and targeting methods grow in accuracy, target volumes continue to shrink and SBRT becomes more prevalent. Due to this fact, patient-specific QA must also enhance resolution and accuracy in order to verify dose delivery in these volumes. It has been suggested that when measuring small fields at least two separate detectors be used to verify delivered dose. Therefore, we have instituted a secondary patient QA verification for small (<3cm) SBRT fields using Gafchromic EBT2 film. Methods: Films were cross-calibrated using a Farmer chamber in plastic water at reference conditions as defined by TG-51. Films were scanned, and an RGB calibration curve was created according to best practices published by Ashland, Inc. Four SBRT cases were evaluated both with the Scandidos Delta4 and with EBT2 films sandwiched in plastic water. Raw values obtained from the film were converted to dose using an in-house algorithm employing all three color channels to increase accuracy and dosimetric range. Gamma and dose profile comparisons to Eclipse dose calculations were obtained using RIT and compared to values obtained with the Delta4. Results: Film gamma pass rates at 2% and 2mm were similar to those obtained with the Delta4. However, dose difference histograms showed better absolute dose agreement, with the average mean film dose agreeing with calculation to 0.3% and the Delta4 only agreeing to 3.1% across the cases. Additionally, films provided more resolution than the Delta4 and thus their dose profiles better succeeded in diagnosing dose calculation inaccuracies. Conclusion: We believe that the implementation of secondary patient QA using EBT2 film analyzed with all three color channels is an invaluable tool for evaluation of small SBRT fields. Furthermore, we have shown that this method can sometimes provide a more detailed and faithful reproduction of plan dose than the Delta4

  6. Analysis rbs of CdS thin films grown by cbd to different intensities of the magnetic field and temperature of the chemical bath

    Pedrero, E.; Vigil, O.

    1999-01-01

    Depth and composition of CdS thin films grown by chemical bath deposition under different temperature and magnetic DC field conditions, were determined by Rutherford Backscattering Spectrometry. The above parameters were evaluated as a function of the bath temperature and the intensity of the induction magnetic field applied

  7. Analysis of low-field isotropic vortex glass containing vortex groups in YBa2Cu3O7-x thin films visualized by scanning SQUID microscopy

    Wells, Frederick S.; Pan, Alexey V.; Wang, X.; Fedoseev, Sergey A.; Hilgenkamp, Hans

    2015-01-01

    The glass-like vortex distribution in pulsed laser deposited YBa2Cu3O7-x thin films is observed by scanning superconducting quantum interference device microscopy and analysed for ordering after cooling in magnetic fields significantly smaller than the Earth's field. Autocorrelation calculations on

  8. Coupling of near-field thermal radiative heating and phonon Monte Carlo simulation: Assessment of temperature gradient in n-doped silicon thin film

    Wong, Basil T.; Francoeur, Mathieu; Bong, Victor N.-S.; Mengüç, M. Pinar

    2014-01-01

    Near-field thermal radiative exchange between two objects is typically more effective than the far-field thermal radiative exchange as the heat flux can increase up to several orders higher in magnitudes due to tunneling of evanescent waves. Such an interesting phenomenon has started to gain its popularity in nanotechnology, especially in nano-gap thermophotovoltaic systems and near-field radiative cooling of micro-/nano-devices. Here, we explored the existence of thermal gradient within an n-doped silicon thin film when it is subjected to intensive near-field thermal radiative heating. The near-field radiative power density deposited within the film is calculated using the Maxwell equations combined with fluctuational electrodynamics. A phonon Monte Carlo simulation is then used to assess the temperature gradient by treating the near-field radiative power density as the heat source. Results indicated that it is improbable to have temperature gradient with the near-field radiative heating as a continuous source unless the source comprises of ultra-short radiative pulses with a strong power density. - Highlights: • This study investigates temperature distribution in an n-doped silicon thin film. • Near-field radiative heating is treated as a volumetric phenomenon. • The temperature gradient is computed using phonon MC simulation. • Temperature of thin film can be approximated as uniform for radiation calculations. • If heat source is a pulsed radiation, a temperature gradient can be established

  9. Enhancement of the critical current density in FeO-coated MgB2 thin films at high magnetic fields

    Andrei E. Surdu

    2011-12-01

    Full Text Available The effect of depositing FeO nanoparticles with a diameter of 10 nm onto the surface of MgB2 thin films on the critical current density was studied in comparison with the case of uncoated MgB2 thin films. We calculated the superconducting critical current densities (Jc from the magnetization hysteresis (M–H curves for both sets of samples and found that the Jc value of FeO-coated films is higher at all fields and temperatures than the Jc value for uncoated films, and that it decreases to ~105 A/cm2 at B = 1 T and T = 20 K and remains approximately constant at higher fields up to 7 T.

  10. Childhood leukemia in relation to radiofrequency electromagnetic fields emitted from television and radio broadcast transmitters. Results of a case-control study; Leukaemien im Kindesalter und elektromagnetische Felder in der Umgebung von Rundfunkstationen. Ergebnisse einer Fall-Kontroll-Studie

    Schmiedel, Sven [Danish Cancer Society, Copenhagen (Denmark). Inst. of Cancer Epidemiology; Universitaetsmedizin Mainz Univ. (DE). Inst. fuer Medizinische Biometrie, Epidemiologie und Informatik (IMBEI); Merzenich, Hiltrud; Bennack, Sabrina; Blettner, Maria [Universitaetsmedizin Mainz Univ. (DE). Inst. fuer Medizinische Biometrie, Epidemiologie und Informatik (IMBEI); Brueggemeyer, Hauke [Niedersaechsischer Landesbetrieb fuer Wasserwirtschaft, Kuesten- und Naturschutz, Hildesheim (Germany). AB35 - Strahlenschutz in Niedersachsen; Philipp, Johannes [Suedwestrundfunk, Stuttgart (Germany). Abt. Frequenz- und Versorgungsplanung; Schuetz, Joachim [Danish Cancer Society, Copenhagen (Denmark). Inst. of Cancer Epidemiology

    2009-07-01

    The causes of childhood leukemia are poorly understood. Radio frequency electromagnetic fields (RF-EMF) emitted from broadcast stations are possible risk factors. A case-control study was conducted in West Germany on RF-EMF and childhood leukemia. The study region consisted of municipalities near 24 radio and television transmitters. Cases (aged 0-14 years, diagnosis 1984-2003) were registered at the German childhood cancer registry. Three age-, gender- and transmitter areamatched controls per case were drawn randomly from population registries. The analysis included 1,959 cases and 5,848 controls. The RF-EMF exposure was calculated with a field strength prediction program. In the statistical analysis conditional logistic regression was used. Considering total RF-EMF, the odds ratio for leukemia was 0.86 (95% confidence interval 0.67-1.11) comparing upper ({>=}95%) and lower (<90%) quantile for the RF-EMF distribution. No association between RF-EMF exposure and leukemia was observed for the time periods before and after the introduction of mobile telecommunication. There was no increased risk among children living in the 2 km vicinity of the transmitters. The study provides no evidence for an association between RF-EMF and childhood leukemia. (orig.)

  11. Electric field-induced hole transport in copper(i) thiocyanate (CuSCN) thin-films processed from solution at room temperature

    Pattanasattayavong, Pichaya; Ndjawa, Guy Olivier Ngongang; Zhao, Kui; Chou, Kang Wei; Yaacobi-Gross, Nir; O'Regan, Brian C.; Amassian, Aram; Anthopoulos, Thomas D.

    2013-01-01

    The optical, structural and charge transport properties of solution-processed films of copper(i) thiocyanate (CuSCN) are investigated in this work. As-processed CuSCN films of ∼20 nm in thickness are found to be nano-crystalline, highly transparent and exhibit intrinsic hole transporting characteristics with a maximum field-effect mobility in the range of 0.01-0.1 cm2 V-1 s-1. © 2013 The Royal Society of Chemistry.

  12. Tunable strain effect and ferroelectric field effect on the electronic transport properties of La0.5Sr0.5CoO3 thin films

    Zhu, Q. X.; Wang, W.; Zhao, X. Q.; Li, X. M.; Wang, Y.; Luo, H. S.; Chan, H. L. W.; Zheng, R. K.

    2012-05-01

    Tensiled La0.5Sr0.5CoO3 (LSCO) thin films were epitaxially grown on piezoelectric 0.67Pb (Mg1/3Nb2/3)O3-0.33PbTiO3 (PMN-PT) single-crystal substrates. Due to the epitaxial nature of the interface, the lattice strain induced by ferroelectric poling or the converse piezoelectric effect in the PMN-PT substrate is effectively transferred to the LSCO film and thus reduces the tensile strain of the film, giving rise to a decrease in the resistivity of the LSCO film. We discuss these strain effects within the framework of the spin state transition of Co3+ ions and modification of the electronic bandwidth that is relevant to the induced strain. By simultaneously measuring the strain and the resistivity, quantitative relationship between the resistivity and the strain was established for the LSCO film. Both theoretical calculation and experimental results demonstrate that the ferroelectric field effect at room temperature in the LSCO/PMN-PT field-effect transistor is minor and could be neglected. Nevertheless, with decreasing temperature, the ferroelectric field effect competes with the strain effect and plays a more and more important role in influencing the electronic transport properties of the LSCO film, which we interpreted as due to the localization of charge carriers at low temperature.

  13. Top-emitting organic light-emitting diodes.

    Hofmann, Simone; Thomschke, Michael; Lüssem, Björn; Leo, Karl

    2011-11-07

    We review top-emitting organic light-emitting diodes (OLEDs), which are beneficial for lighting and display applications, where non-transparent substrates are used. The optical effects of the microcavity structure as well as the loss mechanisms are discussed. Outcoupling techniques and the work on white top-emitting OLEDs are summarized. We discuss the power dissipation spectra for a monochrome and a white top-emitting OLED and give quantitative reports on the loss channels. Furthermore, the development of inverted top-emitting OLEDs is described.

  14. Nano-particle based scattering layers for optical efficiency enhancement of organic light-emitting diodes and organic solar cells

    Chang, Hong-Wei; Lee, Jonghee; Hofmann, Simone; Hyun Kim, Yong; Müller-Meskamp, Lars; Lüssem, Björn; Wu, Chung-Chih; Leo, Karl; Gather, Malte C.

    2013-05-01

    The performance of both organic light-emitting diodes (OLEDs) and organic solar cells (OSC) depends on efficient coupling between optical far field modes and the emitting/absorbing region of the device. Current approaches towards OLEDs with efficient light-extraction often are limited to single-color emission or require expensive, non-standard substrates or top-down structuring, which reduces compatibility with large-area light sources. Here, we report on integrating solution-processed nano-particle based light-scattering films close to the active region of organic semiconductor devices. In OLEDs, these films efficiently extract light that would otherwise remain trapped in the device. Without additional external outcoupling structures, translucent white OLEDs containing these scattering films achieve luminous efficacies of 46 lm W-1 and external quantum efficiencies of 33% (both at 1000 cd m-2). These are by far the highest numbers ever reported for translucent white OLEDs and the best values in the open literature for any white device on a conventional substrate. By applying additional light-extraction structures, 62 lm W-1 and 46% EQE are reached. Besides universally enhancing light-extraction in various OLED configurations, including flexible, translucent, single-color, and white OLEDs, the nano-particle scattering film boosts the short-circuit current density in translucent organic solar cells by up to 70%.

  15. Magnetic Field Dependence of the Critical Current in S-N Bilayer Thin Films

    Sadleir, John E.; Lee, Sang-Jun; Smith, Stephen James; Bandler, Simon; Chervenak, James; Kilbourne, Caroline A.; Finkbeiner, Fred M.; Porter, Frederick S.; Kelley, Richard L.; Adams, Joseph S.; hide

    2013-01-01

    Here we investigate the effects a non-uniform applied magnetic field has on superconducting transition-edge sensors (TESs) critical current. This has implications on TES optimization. It has been shown that TESs resistive transition can be altered by magnetic fields. We have observed critical current rectification effects and explained these effects in terms of a magnetic self-field arising from asymmetric current injection into the sensor. Our TES physical model shows that this magnetic self-field can result in significantly degraded or improved TES performance. In order for this magnetically tuned TES strategy to reach its full potential we are investigating the effect a non-uniform applied magnetic field has on the critical current.

  16. Transport properties of field-effect transistor with Langmuir-Blodgett films of C60 dendrimer and estimation of impurity levels

    Kawasaki, Naoko; Nagano, Takayuki; Kubozono, Yoshihiro; Sako, Yuuki; Morimoto, Yu; Takaguchi, Yutaka; Fujiwara, Akihiko; Chu, Chih-Chien; Imae, Toyoko

    2007-12-01

    Field-effect transistor (FET) device has been fabricated with Langmuir-Blodgett films of C60 dendrimer. The device showed n-channel normally off characteristics with the field-effect mobility of 2.7×10-3cm2V-1s-1 at 300K, whose value is twice as high as that (1.4×10-3cm2V-1s-1) for the FET with spin-coated films of C60 dendrimer. This originates from the formation of ordered π-conduction network of C60 moieties. From the temperature dependence of field-effect mobility, a structural phase transition has been observed at around 300K. Furthermore, the density of states for impurity levels was estimated in the Langmuir-Blodgett films.

  17. Full-field optical thickness profilometry of semitransparent thin films with transmission densitometry

    Johnson, Jay; Harris, Tequila

    2010-01-01

    A novel bidirectional thickness profilometer based on transmission densitometry was designed to measure the localized thickness of semitransparent films on a dynamic manufacturing line. The densitometer model shows that, for materials with extinction coefficients between 0.3 and 2.9 D/mm, 100-500 μm measurements can be recorded with less than ±5% error at more than 10,000 locations in real time. As a demonstration application, the thickness profiles of 75 mmx100 mm regions of polymer electrolyte membrane (PEM) were determined by converting the optical density of the sample to thickness with the Beer-Lambert law. The PEM extinction coefficient was determined to be 1.4 D/mm, with an average thickness error of 4.7%.

  18. Magnetic field and temperature dependence of the critical vortex velocity in type-II superconducting films

    Grimaldi, G; Leo, A; Cirillo, C; Attanasio, C; Nigro, A; Pace, S [CNR-INFM Laboratorio Regionale SuperMat, Via Salvador Allende, I-84081 Baronissi (Italy)], E-mail: grimaldi@sa.infn.it

    2009-06-24

    We study the vortex dynamics in the instability regime induced by high dissipative states well above the critical current in Nb superconducting strips. The magnetic field and temperature behavior of the critical vortex velocity corresponding to the observed dynamic instability is ascribed to intrinsic non-equilibrium phenomena. The Larkin-Ovchinnikov (LO) theory of electronic instability in high velocity vortex motion has been applied to interpret the temperature dependence of the critical vortex velocity. The magnetic field dependence of the vortex critical velocity shows new features in the low-field regime not predicted by LO.

  19. Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO{sub 2} thin films

    Yurchuk, Ekaterina

    2015-02-06

    Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO{sub 2}) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO{sub 2} thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO{sub 2}-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

  20. Controlled Growth of Carbon Nanotubes on Micropatterned Au/Cr Composite Film and Field Emission from Their Arrays

    Kamide, Koichi; Araki, Hisashi; Yoshino, Katsumi

    2003-12-01

    Carbon nanotube (CNT) arrays with a controlled density are prepared on a micropatterned Au/Cr composite film formed on a quartz glass plate by pyrolysis of Ni-phthalocyanine at 800°C. It is clarified from characteristic X-ray analyses for those samples that a catalytic Ni nanoparticle is not contained within the base of the whisker-like CNT in contrast to that of the bamboo-like CNT, suggesting that the growth process of the present novel CNT is incompatible with that of the bamboo-like CNT. In the Au/Cr composite film, both the Cr atomic content of approximately 30% and the presence of the Ni catalyst devoid of a particle-like shape are important factors for the growth of CNTs. Field emission from the novel CNT arrays exhibits a lower turn-on voltage and a higher current density compared with that from the bamboo-like arrays formed on a quartz plate.

  1. Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

    Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, H. N.

    2012-06-01

    High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin film transistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectric transistors, which is very promising for low-power non-volatile memory applications.

  2. Direct Determination of Field Emission across the Heterojunctions in a ZnO/Graphene Thin-Film Barristor.

    Mills, Edmund M; Min, Bok Ki; Kim, Seong K; Kim, Seong Jun; Kang, Min-A; Song, Wooseok; Myung, Sung; Lim, Jongsun; An, Ki-Seok; Jung, Jongwan; Kim, Sangtae

    2015-08-26

    Graphene barristors are a novel type of electronic switching device with excellent performance, which surpass the low on-off ratios that limit the operation of conventional graphene transistors. In barristors, a gate bias is used to vary graphene's Fermi level, which in turn controls the height and resistance of a Schottky barrier at a graphene/semiconductor heterojunction. Here we demonstrate that the switching characteristic of a thin-film ZnO/graphene device with simple geometry results from tunneling current across the Schottky barriers formed at the ZnO/graphene heterojunctions. Direct characterization of the current-voltage-temperature relationship of the heterojunctions by ac-impedance spectroscopy reveals that this relationship is controlled predominantly by field emission, unlike most graphene barristors in which thermionic emission is observed. This governing mechanism makes the device unique among graphene barristors, while also having the advantages of simple fabrication and outstanding performance.

  3. Upper-critical fields of YBa2Cu3O7-δ epitaxial thin films with variable oxygen deficiency δ

    Jones, E.C.; Christen, D.K.; Thompson, J.R.; Ossandon, J.G.; Feenstra, R.; Phillips, J.M.; Siegal, M.P.

    1994-01-01

    Fluctuation analysis in the limit of high magnetic fields was performed on three epitaxial thin films of YBa 2 Cu 3 O 7-δ for various oxygen deficiencies δ c2 (T) slope of -1.7 T/K for H parallel c, consistent with previous observations of transport and magnetic properties. Moreover, the 3D scaling showed better convergence than the 2D scaling, which gave relatively low values of H c2 . In contrast, the transitions were not adequately described by either scaling for T c off the 90-K plateau; it is speculated that this is due to an extrinsic broadening of the transitions, possibly due to the lack of a complete percolation path of the ortho-I phase (δ=0)

  4. Superconducting phase of YBa2Cu3O7-δ films in high magnetic fields: Vortex glass or Bose glass

    Woeltgens, P.J.M.; Dekker, C.; Swueste, J.; de Wijn, H.W.

    1993-01-01

    Nonlinear current-voltage (I-V) curves are measured in laser-ablated YBa 2 Cu 3 O 7-δ films deposited onto SrTiO 3 . The measurements are performed near the glass phase transition in a magnetic field of 5 T at various angles from the c axis. From a critical scaling analysis, the angular dependencies of the glass transition temperature and the critical glass exponents are extracted. At small angles, these results distinguish between a vortex glass, caused by random pointlike disorder, and a Bose glass, caused by linelike disorder. The results can be understood in terms of the vortex-glass model only. No evidence is found for the existence of a Bose-glass phase

  5. Electric-field driven insulator-metal transition and tunable magnetoresistance in ZnO thin film

    Zhang, Le; Chen, Shanshan; Chen, Xiangyang; Ye, Zhizhen; Zhu, Liping

    2018-04-01

    Electrical control of the multistate phase in semiconductors offers the promise of nonvolatile functionality in the future semiconductor spintronics. Here, by applying an external electric field, we have observed a gate-induced insulator-metal transition (MIT) with the temperature dependence of resistivity in ZnO thin films. Due to a high-density carrier accumulation, we have shown the ability to inverse change magnetoresistance in ZnO by ionic liquid gating from 10% to -2.5%. The evolution of photoluminescence under gate voltage was also consistent with the MIT, which is due to the reduction of dislocation. Our in-situ gate-controlled photoluminescence, insulator-metal transition, and the conversion of magnetoresistance open up opportunities in searching for quantum materials and ZnO based photoelectric devices.

  6. Ultra-capacitor flexible films with tailored dielectric constants using electric field assisted assembly of nanoparticles.

    Batra, Saurabh; Cakmak, Miko

    2015-12-28

    In this study, the chaining and preferential alignment of barium titanate nanoparticles (100 nm) through the thickness direction of a polymer matrix in the presence of an electric field is shown. Application of an AC electric field in a well-dispersed solution leads to the formation of chains of nanoparticles in discrete rows oriented with their primary axis in the E-field direction due to dielectrophoresis. The change in the orientation of these chains was quantified through statistical analysis of SEM images and was found to be dependent on E-field, frequency and viscosity. When a DC field is applied a distinct layer consisting of dense particles was observed with micro-computed tomography. These studies show that the increase in DC voltage leads to increase in the thickness of the particle rich layer along with the packing density also increasing. Increasing the mutual interactions between particles due to the formation of particle chains in the "Z"-direction decreases the critical percolation concentration above which substantial enhancement of properties occurs. This manufacturing method therefore shows promise to lower the cost of the products for a range of applications including capacitors by either enhancing the dielectric properties for a given concentration or reduces the concentration of nanoparticles needed for a given property.

  7. Pentacene field-effect transistors by in situ and real time electrical characterization: Comparison between purified and non-purified thin films

    Liu, Shun-Wei; Wen, Je-Min; Lee, Chih-Chien; Su, Wei-Cheng; Wang, Wei-Lun; Chen, Ho-Chien; Lin, Chun-Feng

    2013-01-01

    We present an electrical characterization of the organic field-effect transistor with purified and non-purified pentacene by using in situ and real time measurements. The field-effect phenomenon was observed at the thickness of 1.5 nm (approximately one monolayer of pentacene) for purified pentacene, as compared to 3.0 nm for the non-purified counterpart. Moreover, the hole mobility is improved from 0.13 to 0.23 cm 2 /V s after the sublimation process to purify the pentacene. With atomic force microscopic measurements, the purified pentacene thin film exhibits a larger grain size and film coverage, resulting in better crystallinity of the thin film structure due to the absence of the impurities. This is further confirmed by X-ray diffraction patterns, which show higher intensities for the purified pentacene. - Highlights: • We present in-situ characterization for pentacene field-effect transistors. • The hole mobility is improved after the sublimation process to purify the pentacene. • Purified pentacene thin film exhibits a larger grain size and film coverage. • Hole mobility of pentacene is improved from 0.13 to 0.23 cm 2 /V s. • The discontinuity of grain boundary may cause the shift of threshold voltage

  8. Pentacene field-effect transistors by in situ and real time electrical characterization: Comparison between purified and non-purified thin films

    Liu, Shun-Wei, E-mail: swliu@mail.mcut.edu.tw [Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan, ROC (China); Wen, Je-Min; Lee, Chih-Chien; Su, Wei-Cheng; Wang, Wei-Lun; Chen, Ho-Chien [Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, 10607 Taiwan, ROC (China); Lin, Chun-Feng [Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan, ROC (China)

    2013-05-01

    We present an electrical characterization of the organic field-effect transistor with purified and non-purified pentacene by using in situ and real time measurements. The field-effect phenomenon was observed at the thickness of 1.5 nm (approximately one monolayer of pentacene) for purified pentacene, as compared to 3.0 nm for the non-purified counterpart. Moreover, the hole mobility is improved from 0.13 to 0.23 cm{sup 2}/V s after the sublimation process to purify the pentacene. With atomic force microscopic measurements, the purified pentacene thin film exhibits a larger grain size and film coverage, resulting in better crystallinity of the thin film structure due to the absence of the impurities. This is further confirmed by X-ray diffraction patterns, which show higher intensities for the purified pentacene. - Highlights: • We present in-situ characterization for pentacene field-effect transistors. • The hole mobility is improved after the sublimation process to purify the pentacene. • Purified pentacene thin film exhibits a larger grain size and film coverage. • Hole mobility of pentacene is improved from 0.13 to 0.23 cm{sup 2}/V s. • The discontinuity of grain boundary may cause the shift of threshold voltage.

  9. Influence of an electric field on photostimulated states in NH4BPh4 films

    Antonova, O. V.; Nadolinny, V. A.; Il'inchik, E. A.; Trubin, S. V.

    2012-10-01

    The influence of an electric field on stable photostimulated triplet states of NH4BPh4 at a temperature of 77 K have been studied by EPR spectroscopy. It has been established that, on exposure to UV radiation, electron capture by traps in the band gaps takes place with formation of triplet state. After application of an electric field, triplet states are destructed because, with an increase in the applied voltage, a gradual inclination of energy bands takes place and electrons found in traps on different energy levels are released. The assumption that captured electrons are found in traps on different energy levels is confirmed by earlier studies of thermoluminescence spectra.

  10. Studying the instantaneous velocity field in gas-sheared liquid films in a horizontal duct

    Vasques, Joao; Tokarev, Mikhail; Cherdantsev, Andrey; Hann, David; Hewakandamby, Buddhika; Azzopardi, Barry

    2016-11-01

    In annular flow, the experimental validation of the basic assumptions on the liquid velocity profile is vital for developing theoretical models of the flow. However, the study of local velocity of liquid in gas-sheared films has proven to be a challenging task due to the highly curved and disturbed moving interface of the phases, small scale of the area of interrogation, high velocity gradients and irregular character of the flow. This study reports on different optical configurations and interface-tracking methods employed in a horizontal duct in order to obtain high-resolution particle image velocimetry (PIV) data in such types of complex flows. The experimental envelope includes successful measurements in 2D and 3D waves regimes, up to the disturbance wave regime. Preliminary data show the presence of complex structures in the liquid phase, which includes re-circulation areas below the liquid interface due to the gas-shearing action, together with non-uniform transverse movements of the liquid phase close to the wall due to the presence of 3D waves at the interface. With the aid of the moving interface-tracking, PIV, time-resolved particle-tracking velocimetry and vorticity measurements were performed.

  11. Domain Engineered Magnetoelectric Thin Films for High Sensitivity Resonant Magnetic Field Sensors

    2012-02-28

    increas small at low uency shift ur hypothes former: Sin (output), w tion. Materia ansducer. Th e transform voltage gai rmer. Furth ansformer p ded...90 min, r 0 Oe to 300 ith increasin ity (GH-G0/G tic field. Th dels. The d agnetic fiel ion of actua rent materia se with high nce and new r. This

  12. Magnetic field dependence of the superconducting proximity effect in a two atomic layer thin metallic film

    Caminale, Michael; Leon Vanegas, Augusto A.; Stepniak, Agnieszka; Oka, Hirofumi; Fischer, Jeison A.; Sander, Dirk; Kirschner, Juergen [Max-Planck-Institut fuer Mikrostrukturphysik, Halle (Germany)

    2015-07-01

    The intriguing possibility to induce superconductivity in a metal, in direct contact with a superconductor, is under renewed interest for applications and for fundamental aspects. The underlying phenomenon is commonly known as proximity effect. In this work we exploit the high spatial resolution of scanning tunneling spectroscopy at sub-K temperatures and in magnetic fields. We probe the differential conductance along a line from a superconducting 9 ML high Pb nanoisland into the surrounding two layer thin Pb/Ag wetting layer on a Si(111) substrate. A gap in the differential conductance indicates superconductivity of the Pb island. We observe an induced gap in the wetting layer, which decays with increasing distance from the Pb island. This proximity length is 21 nm at 0.38 K and 0 T. We find a non-trivial dependence of the proximity length on magnetic field. Surprisingly, we find that the magnetic field does not affect the induced superconductivity up to 0.3 T. However, larger fields of 0.6 T suppress superconductivity in the wetting layer, where the Pb island still remains superconducting. We discuss the unexpected robustness of induced superconductivity in view of the high electronic diffusivity in the metallic wetting layer.

  13. Magnetic field and temperature dependent measurements of hall coefficient in thermal evaporated Tin-Doped Cadmium Oxide Thin films

    Hamadi, O.; Shakir, N.; Mohammed, F.

    2010-01-01

    CdO:Sn thin films are deposited onto glass substrates by thermal evaporation under vacuum. The studied films are polycrystalline and have an NaCl structure. The Hall effect is studied for films with different thickness as substrates are maintained at different temperatures. The temperature dependence of the Hall mobility is also investigated. (authors)

  14. Ultra-thin titanium nanolayers for plasmon-assisted enhancement of bioluminescence of chloroplast in biological light emitting devices

    Hsun Su, Yen [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Hsu, Chia-Yun; Chang, Chung-Chien [Science and Technology of Accelerator Light Source, Hsinchu 300, Taiwan (China); Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China); Tu, Sheng-Lung; Shen, Yun-Hwei [Department of Resource Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China)

    2013-08-05

    Ultra-thin titanium films were deposited via ultra-high vacuum ion beam sputter deposition. Since the asymmetric electric field of the metal foil plane matches the B-band absorption of chlorophyll a, the ultra-thin titanium nanolayers were able to generate surface plasmon resonance, thus enhancing the photoluminescence of chlorophyll a. Because the density of the states of plasmon resonance increases, the enhancement of photoluminescence also rises. Due to the biocompatibility and inexpensiveness of titanium, it can be utilized to enhance the bioluminescence of chloroplast in biological light emitting devices, bio-laser, and biophotonics.

  15. Simulations of charge transport in organic light emitting diodes

    Martin, Simon James

    2002-01-01

    In this thesis, two approaches to the modelling of charge transport in organic light emitting diodes (OLEDs) are presented. The first is a drift-diffusion model, normally used when considering conventional crystalline inorganic semiconductors (e.g. Si or lll-V's) which have well defined energy bands. In this model, electron and hole transport is described using the current continuity equations and the drift-diffusion current equations, and coupled to Poisson's equation. These equations are solved with the appropriate boundary conditions, which for OLEDs are Schottky contacts; carriers are injected by thermionic emission and tunnelling. The disordered nature of the organic semiconductors is accounted for by the inclusion of field-dependent carrier mobilities and Langevin optical recombination. The second approach treats the transport of carriers in disordered organic semi-conductors as a hopping process between spatially and energetically disordered sites. This method has been used previously to account for the observed temperature and electric field dependence of carrier mobilities in disordered organic semiconductors. A hopping transport model has been developed which accounts explicitly for the structure in highly ordered films of rigid rod liquid-crystalline conjugated polymers. Chapter 2 discusses the formation of metal-semiconductor contacts, and current injection processes in OLEDs. If the barrier to carrier injection at a metal-semiconductor contact is small, or the contact is Ohmic, then the current may be space charge limited; this second limiting regime of current flow for OLEDs is also described. The remainder of Chapter 2 describes the drift-diffusion model used in this work in some detail. Chapter 3 contains results obtained from modelling the J-V characteristics of single-layer OLEDs, which are compared to experimental data in order to validate the drift-diffusion model. Chapter 4 contains results of simulating bi-layer OLEDs; rather than examining J

  16. Electric field tuning of magnetism in heterostructure of yttrium iron garnet film/lead magnesium niobate-lead zirconate titanate ceramic

    Lian, Jianyun; Ponchel, Freddy; Tiercelin, Nicolas; Chen, Ying; Rémiens, Denis; Lasri, Tuami; Wang, Genshui; Pernod, Philippe; Zhang, Wenbin; Dong, Xianlin

    2018-04-01

    In this paper, the converse magnetoelectric (CME) effect by electric field tuning of magnetization in an original heterostructure composed of a polycrystalline yttrium iron garnet (YIG) film and a lead magnesium niobate-lead zirconate titanate (PMN-PZT) ceramic is presented. The magnetic performances of the YIG films with different thicknesses under a DC electric field applied to the PMN-PZT ceramics and a bias magnetic field are investigated. All the magnetization-electric field curves are found to be in good agreement with the butterfly like strain curve of the PMN-PZT ceramic. Both the sharp deformation of about 2.5‰ of PMN-PZT and the easy magnetization switching of YIG are proposed to be the reasons for the strongest CME interaction in the composite at the small electric coercive field of PMN-PZT (4.1 kV/cm) and the small magnetic coercive field of YIG (20 Oe) where the magnetic susceptibility reaches its maximum value. A remarkable CME coefficient of 3.1 × 10-7 s/m is obtained in the system with a 600 nm-thick YIG film. This heterostructure combining multiferroics and partially magnetized ferrite concepts is able to operate under a small or even in the absence of an external bias magnetic field and is more compact and power efficient than the traditional magnetoelectric devices.

  17. Modifying thin film diamond for electronic applications

    Baral, B.

    1999-01-01

    The unique combination of properties that diamond possesses are being exploited in both electronic and mechanical applications. An important step forward in the field has been the ability to grow thin film diamond by chemical vapour deposition (CVD) methods and to control parameters such as crystal orientation, dopant level and surface roughness. An extensive understanding of the surface of any potential electronic material is vital to fully comprehend its behaviour within device structures. The surface itself ultimately controls key aspects of device performance when interfaced with other materials. This study has provided insight into important chemical reactions on polycrystalline CVD diamond surfaces, addressing how certain surface modifications will ultimately affect the properties of the material. A review of the structure, bonding, properties and potential of diamond along with an account of the current state of diamond technology and CVD diamond growth is provided. The experimental chapter reviews bulk material and surface analytical techniques employed in this work and is followed by an investigation of cleaning treatments for polycrystalline CVD diamond aimed at removing non-diamond carbon from the surface. Selective acid etch treatments are compared and contrasted for efficacy with excimer laser irradiation and hydrogen plasma etching. The adsorption/desorption kinetics of potential dopant-containing precursors on polycrystalline CVD diamond surfaces have been investigated to compare their effectiveness at introducing dopants into the diamond during the growth stage. Both boron and sulphur-containing precursor compounds have been investigated. Treating polycrystalline CVD diamond in various atmospheres / combination of atmospheres has been performed to enhance electron field emission from the films. Films which do not emit electrons under low field conditions can be modified such that they emit at fields as low as 10 V/μm. The origin of this enhancement

  18. Near Field and Far Field Effects in the Taguchi-Optimized Design of AN InP/GaAs-BASED Double Wafer-Fused Mqw Long-Wavelength Vertical-Cavity Surface-Emitting Laser

    Menon, P. S.; Kandiah, K.; Mandeep, J. S.; Shaari, S.; Apte, P. R.

    Long-wavelength VCSELs (LW-VCSEL) operating in the 1.55 μm wavelength regime offer the advantages of low dispersion and optical loss in fiber optic transmission systems which are crucial in increasing data transmission speed and reducing implementation cost of fiber-to-the-home (FTTH) access networks. LW-VCSELs are attractive light sources because they offer unique features such as low power consumption, narrow beam divergence and ease of fabrication for two-dimensional arrays. This paper compares the near field and far field effects of the numerically investigated LW-VCSEL for various design parameters of the device. The optical intensity profile far from the device surface, in the Fraunhofer region, is important for the optical coupling of the laser with other optical components. The near field pattern is obtained from the structure output whereas the far-field pattern is essentially a two-dimensional fast Fourier Transform (FFT) of the near-field pattern. Design parameters such as the number of wells in the multi-quantum-well (MQW) region, the thickness of the MQW and the effect of using Taguchi's orthogonal array method to optimize the device design parameters on the near/far field patterns are evaluated in this paper. We have successfully increased the peak lasing power from an initial 4.84 mW to 12.38 mW at a bias voltage of 2 V and optical wavelength of 1.55 μm using Taguchi's orthogonal array. As a result of the Taguchi optimization and fine tuning, the device threshold current is found to increase along with a slight decrease in the modulation speed due to increased device widths.

  19. A thin film passive magnetic field sensor operated at 425 MHz

    Li, Bodong; Kosel, Jü rgen

    2013-01-01

    A passive, magnetic field sensor consisting of a 425 MHz surface acoustic wave (SAW) transponder loaded with a giant magnetoimpedance (GMI) element is developed. The transponder, consisting of two interdigital transducers (IDTs) and the GMI element, a multilayer structure composed of Ni80Fe 20/Cu/Ni80Fe20, are fabricated on a 128° Y-X cut LiNbO3 substrate. The integrated sensor is characterized with a network analyzer through an S-parameter measurement. Upon the application of a magnetic field, a maximum amplitude change and phase shift of 2.7 dB and 20 degree, respectively, are observed. Within the linear region, the magnetic sensitivity is 3870 dB/T and the resolution is 1.3 μT. © 2013 IEEE.

  20. A thin film passive magnetic field sensor operated at 425 MHz

    Li, Bodong

    2013-06-01

    A passive, magnetic field sensor consisting of a 425 MHz surface acoustic wave (SAW) transponder loaded with a giant magnetoimpedance (GMI) element is developed. The transponder, consisting of two interdigital transducers (IDTs) and the GMI element, a multilayer structure composed of Ni80Fe 20/Cu/Ni80Fe20, are fabricated on a 128° Y-X cut LiNbO3 substrate. The integrated sensor is characterized with a network analyzer through an S-parameter measurement. Upon the application of a magnetic field, a maximum amplitude change and phase shift of 2.7 dB and 20 degree, respectively, are observed. Within the linear region, the magnetic sensitivity is 3870 dB/T and the resolution is 1.3 μT. © 2013 IEEE.