WorldWideScience

Sample records for field-induced metal-insulator transition

  1. Metal-insulator transitions

    Science.gov (United States)

    Imada, Masatoshi; Fujimori, Atsushi; Tokura, Yoshinori

    1998-10-01

    Metal-insulator transitions are accompanied by huge resistivity changes, even over tens of orders of magnitude, and are widely observed in condensed-matter systems. This article presents the observations and current understanding of the metal-insulator transition with a pedagogical introduction to the subject. Especially important are the transitions driven by correlation effects associated with the electron-electron interaction. The insulating phase caused by the correlation effects is categorized as the Mott Insulator. Near the transition point the metallic state shows fluctuations and orderings in the spin, charge, and orbital degrees of freedom. The properties of these metals are frequently quite different from those of ordinary metals, as measured by transport, optical, and magnetic probes. The review first describes theoretical approaches to the unusual metallic states and to the metal-insulator transition. The Fermi-liquid theory treats the correlations that can be adiabatically connected with the noninteracting picture. Strong-coupling models that do not require Fermi-liquid behavior have also been developed. Much work has also been done on the scaling theory of the transition. A central issue for this review is the evaluation of these approaches in simple theoretical systems such as the Hubbard model and t-J models. Another key issue is strong competition among various orderings as in the interplay of spin and orbital fluctuations. Experimentally, the unusual properties of the metallic state near the insulating transition have been most extensively studied in d-electron systems. In particular, there is revived interest in transition-metal oxides, motivated by the epoch-making findings of high-temperature superconductivity in cuprates and colossal magnetoresistance in manganites. The article reviews the rich phenomena of anomalous metallicity, taking as examples Ti, V, Cr, Mn, Fe, Co, Ni, Cu, and Ru compounds. The diverse phenomena include strong spin and

  2. Metal-insulator transition in vanadium dioxide

    International Nuclear Information System (INIS)

    Zylbersztejn, A.; Mott, N.F.

    1975-01-01

    The basic physical parameters which govern the metal-insulator transition in vanadium dioxide are determined through a review of the properties of this material. The major importance of the Hubbard intra-atomic correlation energy in determining the insulating phase, which was already evidence by studies of the magnetic properties of V 1 -/subx/Cr/subx/O 2 alloys, is further demonstrated from an analysis of their electrical properties. An analysis of the magnetic susceptibility of niobium-doped VO 2 yields a picture for the current carrier in the low-temperature phase in which it is accompanied by a spin cloud (owing to Hund's-rule coupling), and has therefore an enhanced mass (m approx. = 60m 0 ). Semiconducting vanadium dioxide turns out to be a borderline case for a classical band-transport description; in the alloys at high doping levels, Anderson localization with hopping transport can take place. Whereas it is shown that the insulating phase cannot be described correctly without taking into account the Hubbard correlation energy, we find that the properties of the metallic phase are mainly determined by the band structure. Metallic VO 2 is, in our view, similar to transition metals like Pt or Pd: electrons in a comparatively wide band screening out the interaction between the electrons in a narrow overlapping band. The magnetic susceptibility is described as exchange enhanced. The large density of states at the Fermi level yields a substantial contribution of the entropy of the metallic electrons to the latent heat. The crystalline distortion removes the band degeneracy so that the correlation energy becomes comparable with the band width and a metal-insulator transition takes place

  3. Reentrant Metal-Insulator Transitions in Silicon -

    Science.gov (United States)

    Campbell, John William M.

    This thesis describes a study of reentrant metal -insulator transitions observed in the inversion layer of extremely high mobility Si-MOSFETs. Magneto-transport measurements were carried out in the temperature range 20mK-4.2 K in a ^3He/^4 He dilution refrigerator which was surrounded by a 15 Tesla superconducting magnet. Below a melting temperature (T_{M}~500 mK) and a critical electron density (n_{s }~9times10^{10} cm^{-2}), the Shubnikov -de Haas oscillations in the diagonal resistivity enormous maximum values at the half filled Landau levels while maintaining deep minima corresponding to the quantum Hall effect at filled Landau levels. At even lower electron densities the insulating regions began to spread and eventually a metal-insulator transition could be induced at zero magnetic field. The measurement of extremely large resistances in the milliKelvin temperature range required the use of very low currents (typically in the 10^ {-12} A range) and in certain measurements minimizing the noise was also a consideration. The improvements achieved in these areas through the use of shielding, optical decouplers and battery operated instruments are described. The transport signatures of the insulating state are considered in terms of two basic mechanisms: single particle localization with transport by variable range hopping and the formation of a collective state such as a pinned Wigner crystal or electron solid with transport through the motion of bound dislocation pairs. The experimental data is best described by the latter model. Thus the two dimensional electron system in these high mobility Si-MOSFETs provides the first and only experimental demonstration to date of the formation of an electron solid at zero and low magnetic fields in the quantum limit where the Coulomb interaction energy dominates over the zero point oscillation energy. The role of disorder in favouring either single particle localization or the formation of a Wigner crystal is explored by

  4. Harnessing the metal-insulator transition for tunable metamaterials

    Science.gov (United States)

    Charipar, Nicholas A.; Charipar, Kristin M.; Kim, Heungsoo; Bingham, Nicholas S.; Suess, Ryan J.; Mathews, Scott A.; Auyeung, Raymond C. Y.; Piqué, Alberto

    2017-08-01

    The control of light-matter interaction through the use of subwavelength structures known as metamaterials has facilitated the ability to control electromagnetic radiation in ways not previously achievable. A plethora of passive metamaterials as well as examples of active or tunable metamaterials have been realized in recent years. However, the development of tunable metamaterials is still met with challenges due to lack of materials choices. To this end, materials that exhibit a metal-insulator transition are being explored as the active element for future metamaterials because of their characteristic abrupt change in electrical conductivity across their phase transition. The fast switching times (▵t < 100 fs) and a change in resistivity of four orders or more make vanadium dioxide (VO2) an ideal candidate for active metamaterials. It is known that the properties associated with thin film metal-insulator transition materials are strongly dependent on the growth conditions. For this work, we have studied how growth conditions (such as gas partial pressure) influence the metalinsulator transition in VO2 thin films made by pulsed laser deposition. In addition, strain engineering during the growth process has been investigated as a method to tune the metal-insulator transition temperature. Examples of both the optical and electrical transient dynamics facilitating the metal-insulator transition will be presented together with specific examples of thin film metamaterial devices.

  5. Unusual metal-insulator transition in disordered ferromagnetic films

    International Nuclear Information System (INIS)

    Muttalib, K.A.; Wölfle, P.; Misra, R.; Hebard, A.F.

    2012-01-01

    We present a theoretical interpretation of recent data on the conductance near and farther away from the metal-insulator transition in thin ferromagnetic Gd films of thickness b≈2-10 nm. For increasing sheet resistances a dimensional crossover takes place from d=2 to d=3 dimensions, since the large phase relaxation rate caused by scattering of quasiparticles off spin wave excitations renders the dephasing length L φ ≲b at strong disorder. The conductivity data in the various regimes obey fractional power-law or logarithmic temperature dependence. One observes weak localization and interaction induced corrections at weaker disorder. At strong disorder, near the metal-insulator transition, the data show scaling and collapse onto two scaling curves for the metallic and insulating regimes. We interpret this unusual behavior as proof of two distinctly different correlation length exponents on both sides of the transition.

  6. Quantum Critical “Opalescence” around Metal-Insulator Transitions

    Science.gov (United States)

    Misawa, Takahiro; Yamaji, Youhei; Imada, Masatoshi

    2006-08-01

    Divergent carrier-density fluctuations equivalent to the critical opalescence of gas-liquid transition emerge around a metal-insulator critical point at a finite temperature. In contrast to the gas-liquid transitions, however, the critical temperatures can be lowered to zero, which offers a challenging quantum phase transition. We present a microscopic description of such quantum critical phenomena in two dimensions. The conventional scheme of phase transitions by Ginzburg, Landau, and Wilson is violated because of its topological nature. It offers a clear insight into the criticalities of metal-insulator transitions (MIT) associated with Mott or charge-order transitions. Fermi degeneracy involving the diverging density fluctuations generates emergent phenomena near the endpoint of the first-order MIT and must shed new light on remarkable phenomena found in correlated metals such as unconventional cuprate superconductors. It indeed accounts for the otherwise puzzling criticality of the Mott transition recently discovered in an organic conductor. We propose to accurately measure enhanced dielectric fluctuations at small wave numbers.

  7. On metal-insulator transition in cubic fullerides

    Science.gov (United States)

    Iwahara, Naoya; Chibotaru, Liviu

    The interplay between degenerate orbital and electron correlation is a key to characterize the electronic phases in, for example, transition metal compounds and alkali-doped fullerides. Besides, the degenerate orbital couples to spin and lattice degrees of freedom ,giving rise to exotic phenomena. Here, we develop the self-consistent Gutzwiller approach for the simultaneous treatment of the Jahn-Teller effect and electron correlation, and apply the methodology to reveal the nature of the ground electronic state of fullerides. For small Coulomb repulsion on site U, the fulleride is quasi degenerate correlated metal. With increase of U, we found the quantum phase transition from the metallic phase to JT split phase. In the latter, the Mott transition (MT) mainly develops in the half-filled subband, whereas the empty and the completely filled subbands are almost uninvolved. Therefore, we can qualify the metal-insulator transition in fullerides as an orbital selective MT induced by JT effect.

  8. Holographic metal-insulator transition in higher derivative gravity

    Energy Technology Data Exchange (ETDEWEB)

    Ling, Yi, E-mail: lingy@ihep.ac.cn [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Shanghai Key Laboratory of High Temperature Superconductors, Shanghai, 200444 (China); Liu, Peng, E-mail: liup51@ihep.ac.cn [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Wu, Jian-Pin, E-mail: jianpinwu@mail.bnu.edu.cn [Institute of Gravitation and Cosmology, Department of Physics, School of Mathematics and Physics, Bohai University, Jinzhou 121013 (China); Shanghai Key Laboratory of High Temperature Superconductors, Shanghai, 200444 (China); Zhou, Zhenhua, E-mail: zhouzh@ihep.ac.cn [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China)

    2017-03-10

    We introduce a Weyl term into the Einstein–Maxwell-Axion theory in four dimensional spacetime. Up to the first order of the Weyl coupling parameter γ, we construct charged black brane solutions without translational invariance in a perturbative manner. Among all the holographic frameworks involving higher derivative gravity, we are the first to obtain metal-insulator transitions (MIT) when varying the system parameters at zero temperature. Furthermore, we study the holographic entanglement entropy (HEE) of strip geometry in this model and find that the second order derivative of HEE with respect to the axion parameter exhibits maximization behavior near quantum critical points (QCPs) of MIT. It testifies the conjecture in that HEE itself or its derivatives can be used to diagnose quantum phase transition (QPT).

  9. On holographic disorder-driven metal-insulator transitions

    Energy Technology Data Exchange (ETDEWEB)

    Baggioli, Matteo; Pujolàs, Oriol [Institut de Física d’Altes Energies (IFAE), Universitat Autònoma de Barcelona,The Barcelona Institute of Science and Technology,Campus UAB, 08193 Bellaterra (Barcelona) (Spain)

    2017-01-10

    We give a minimal holographic model of a disorder-driven metal-insulator transition. It consists in a CFT with a charge sector and a translation-breaking sector that interact in the most generic way allowed by the symmetries and by dynamical consistency. In the gravity dual, it reduces to a Massive Gravity-Maxwell model with a new direct coupling between the gauge field and the metric that is allowed when gravity is massive. We show that the effect of this coupling is to decrease the DC electrical conductivity generically. This gives a nontrivial check that holographic massive gravity can be consistently interpreted as disorder from the CFT perspective. The suppression of the conductivity happens to such an extent that it does not obey any lower bound and it can be very small in the insulating phase. In some cases, the large disorder limit produces gradient instabilities that hint at the formation of modulated phases.

  10. On holographic disorder-driven metal-insulator transitions

    International Nuclear Information System (INIS)

    Baggioli, Matteo; Pujolàs, Oriol

    2017-01-01

    We give a minimal holographic model of a disorder-driven metal-insulator transition. It consists in a CFT with a charge sector and a translation-breaking sector that interact in the most generic way allowed by the symmetries and by dynamical consistency. In the gravity dual, it reduces to a Massive Gravity-Maxwell model with a new direct coupling between the gauge field and the metric that is allowed when gravity is massive. We show that the effect of this coupling is to decrease the DC electrical conductivity generically. This gives a nontrivial check that holographic massive gravity can be consistently interpreted as disorder from the CFT perspective. The suppression of the conductivity happens to such an extent that it does not obey any lower bound and it can be very small in the insulating phase. In some cases, the large disorder limit produces gradient instabilities that hint at the formation of modulated phases.

  11. Metal-insulator transitions in IZO, IGZO, and ITZO films

    Energy Technology Data Exchange (ETDEWEB)

    Makise, Kazumasa, E-mail: makise@nict.go.jp [National Institute of Information and Communications Technology, Kobe 651-2492 (Japan); Hidaka, Kazuya; Ezaki, Syohei; Asano, Takayuki; Shinozaki, Bunju [Department of Physics, Kyushu University, Fukuoka 810-8560 (Japan); Tomai, Shigekazu; Yano, Koki; Nakamura, Hiroaki [Central Research Laboratories, Idemitsu Kosan Co. Ltd, Chiba 299-0293 (Japan)

    2014-10-21

    In this study, we measured the low-temperature resistivity of amorphous two- and three-dimensional (2D and 3D) indium-zinc oxide, indium-gallium-zinc oxide, and indium-tin-zinc oxide films with a wide range of carrier densities. To determine their critical characteristics at the metal-insulator transition (MIT), we used the Ioffe–Regel criterion. We found that the MIT occurs in a narrow range between k{sub F}ℓ =0.13 and k{sub F}ℓ =0.25, where k{sub F} and ℓ are the Fermi wave number and electron mean free path, respectively. For films in the insulating region, we analyzed ρ(T) using a procedure proposed by Zabrodskii and Zinov'eva. This analysis confirmed the occurrence of Mott and Efros–Shklovskii (ES) variable-range hopping. The materials studied show crossover behavior from exp(T{sub Mott}/T){sup 1/4} or exp(T{sub Mott}/T){sup 1/3} for Mott hopping conduction to exp(T{sub ES}/T){sup 1/2} for ES hopping conduction with decreasing temperature. For both 2D and 3D materials, we found that the relationship between T{sub Mott} and T{sub ES} satisfies T{sub ES}∝T{sub Mott}{sup 2/3}.

  12. The model of metal-insulator phase transition in vanadium oxide

    International Nuclear Information System (INIS)

    Vikhnin, V.S.; Lysenko, S.; Rua, A.; Fernandez, F.; Liu, H.

    2005-01-01

    Thermally induced metal-insulator phase transitions (PT) in VO 2 thin films are studied theoretically and experimentally. The hysteresis phenomena in the region of the transition for different type thin films were investigated. The phenomenological model of the PT is suggested. The charge transfer-lattice instability in VO 2 metallic phase is considered as basis of the first order metal-insulator PT in VO 2 . The charge transfer is treated as an order parameter

  13. Universal Quantum Criticality in the Metal-Insulator Transition of Two-Dimensional Interacting Dirac Electrons

    Directory of Open Access Journals (Sweden)

    Yuichi Otsuka

    2016-03-01

    Full Text Available The metal-insulator transition has been a subject of intense research since Mott first proposed that the metallic behavior of interacting electrons could turn to an insulating one as electron correlations increase. Here, we consider electrons with massless Dirac-like dispersion in two spatial dimensions, described by the Hubbard models on two geometrically different lattices, and perform numerically exact calculations on unprecedentedly large systems that, combined with a careful finite-size scaling analysis, allow us to explore the quantum critical behavior in the vicinity of the interaction-driven metal-insulator transition. Thereby, we find that the transition is continuous, and we determine the quantum criticality for the corresponding universality class, which is described in the continuous limit by the Gross-Neveu model, a model extensively studied in quantum field theory. Furthermore, we discuss a fluctuation-driven scenario for the metal-insulator transition in the interacting Dirac electrons: The metal-insulator transition is triggered only by the vanishing of the quasiparticle weight, not by the Dirac Fermi velocity, which instead remains finite near the transition. This important feature cannot be captured by a simple mean-field or Gutzwiller-type approximate picture but is rather consistent with the low-energy behavior of the Gross-Neveu model.

  14. Metal-insulator transition and Frohlich conductivity in the Su-Schrieffer-Heeger model

    NARCIS (Netherlands)

    Michielsen, K.F L; de Raedt, H.A.

    1996-01-01

    A quantum molecular dynamics technique is used to study the single-particle density of states, Drude weight, optical conductivity and flux quantization in the Su-Schrieffer-Heeger (SSH) model. Our simulation data show that the SSH model has a metal-insulator transition away from half-filling. In the

  15. Tunable metal-insulator transitions in bilayer graphene by thermal annealing

    OpenAIRE

    Kalon, Gopinadhan; Shin, Young Jun; Yang, Hyunsoo

    2012-01-01

    Tunable and highly reproducible metal-insulator transitions have been observed in bilayer graphene upon thermal annealing at 400 K under high vacuum conditions. Before annealing, the sample is metallic in the whole temperature regime of study. Upon annealing, the conductivity changes from metallic to that of an insulator and the transition temperature is a function of annealing time. The pristine metallic state can be reinstated by exposing to air thereby inducing changes in the electronic pr...

  16. Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

    OpenAIRE

    Bragaglia, Valeria; Arciprete, Fabrizio; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning

    2016-01-01

    Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a f...

  17. Structurally triggered metal-insulator transition in rare-earth nickelates.

    Science.gov (United States)

    Mercy, Alain; Bieder, Jordan; Íñiguez, Jorge; Ghosez, Philippe

    2017-11-22

    Rare-earth nickelates form an intriguing series of correlated perovskite oxides. Apart from LaNiO 3 , they exhibit on cooling a sharp metal-insulator electronic phase transition, a concurrent structural phase transition, and a magnetic phase transition toward an unusual antiferromagnetic spin order. Appealing for various applications, full exploitation of these compounds is still hampered by the lack of global understanding of the interplay between their electronic, structural, and magnetic properties. Here we show from first-principles calculations that the metal-insulator transition of nickelates arises from the softening of an oxygen-breathing distortion, structurally triggered by oxygen-octahedra rotation motions. The origin of such a rare triggered mechanism is traced back in their electronic and magnetic properties, providing a united picture. We further develop a Landau model accounting for the metal-insulator transition evolution in terms of the rare-earth cations and rationalizing how to tune this transition by acting on oxygen rotation motions.

  18. Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

    Energy Technology Data Exchange (ETDEWEB)

    Achatz, Philipp

    2009-05-15

    During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n{sub c} for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers ({approx} 500 cm{sup -1}) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g{sub c}. The granularity also influences significantly the superconducting properties by introducing the superconducting gap {delta} in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the

  19. Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

    International Nuclear Information System (INIS)

    Achatz, Philipp

    2009-01-01

    During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n c for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers (∼ 500 cm -1 ) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g c . The granularity also influences significantly the superconducting properties by introducing the superconducting gap Δ in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the first time in aluminum

  20. Practical Improvements to the Lee-More Conductivity Near the Metal-Insulator Transition

    International Nuclear Information System (INIS)

    Desjarlais, Michael P.

    2000-01-01

    The wide-range conductivity model of Lee and More is modified to allow better agreement with recent experimental data and theories for dense plasmas in the metal-insulator transition regime. Modifications primarily include a new ionization equilibrium model, consisting of a smooth blend between single ionization Saha (with a pressure ionization correction) and the generic Thomas-Fermi ionization equilibrium, a more accurate treatment of electron-neutral collisions using a polarization potential, and an empirical modification to the minimum allowed collision time. These simple modifications to the Lee-More algorithm permit a more accurate modeling of the physics near the metal-insulator transition, while preserving the generic Lee-More results elsewhere

  1. Practical improvements to the Lee-More conductivity near the metal-insulator transition

    International Nuclear Information System (INIS)

    Desjarlais, M.P.

    2001-01-01

    The wide-range conductivity model of Lee and More is modified to allow better agreement with recent experimental data and theories for dense plasmas in the metal-insulator transition regime. Modifications primarily include a new ionization equilibrium model, consisting of a smooth blend between single ionization Saha (with a pressure ionization correction) and the generic Thomas-Fermi ionization equilibrium, a more accurate treatment of electron-neutral collisions using a polarization potential, and an empirical modification to the minimum allowed collision time. These simple modifications to the Lee-More algorithm permit a more accurate modeling of the physics near the metal-insulator transition, while preserving the generic Lee-More results elsewhere. (orig.)

  2. Magnetoconductance of amorphous Yx-Si1-x alloys near the metal-insulator transition

    International Nuclear Information System (INIS)

    Sanquer, M.; Tourbot, R.; Boucher, B.

    1989-01-01

    We have performed magnetoresistance experiments across the Metal-Insulator transition in amorphous Y x -Si 1-x alloys using very high fields (H = 40T) and very low temperatures (T = 0.05K). Different and unusual behaviours are observed and can be explained assuming that the electron-electron interaction contribution dominates at low fields and localization corrections appears at very high fields. This is the opposite situation compared to usual weak localization regime

  3. Tuning the metal-insulator transition in manganite films through surface exchange coupling with magnetic nanodots.

    Science.gov (United States)

    Ward, T Z; Gai, Z; Xu, X Y; Guo, H W; Yin, L F; Shen, J

    2011-04-15

    In strongly correlated electronic systems, the global transport behavior depends sensitively on spin ordering. We show that spin ordering in manganites can be controlled by depositing isolated ferromagnetic nanodots at the surface. The exchange field at the interface is tunable with nanodot density and makes it possible to overcome dimensionality and strain effects in frustrated systems to greatly increasing the metal-insulator transition and magnetoresistance. These findings indicate that electronic phase separation can be controlled by the presence of magnetic nanodots.

  4. Metal-insulator transition in n-InSb under high hydrostatic pressure

    International Nuclear Information System (INIS)

    Schaller, U.; Kraak, W.; Herrmann, R.

    1984-01-01

    The effect of applying hydrostatic compression (up to 12 kbar) to the galvanomagnetic properties of pure n-InSb crystals is investigated in order to get information about the influence of hydrostatic pressure on the localization of carriers and about the metal-insulator transition. Electrical resistivity and Hall coefficient are measured as a function of pressure for various excess donor concentrations as well as a function of temperature for various pressures

  5. Probable metal-insulator transition in Ag{sub 4}SSe

    Energy Technology Data Exchange (ETDEWEB)

    Drebushchak, V.A., E-mail: dva@igm.nsc.ru [V.S. Sobolev Institute of Geology and Mineralogy, SB RAS, Pr. Ac. Koptyuga 3, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Ul. Pirogova 2, Novosibirsk 630090 (Russian Federation); Pal’yanova, G.A.; Seryotkin, Yu.V. [V.S. Sobolev Institute of Geology and Mineralogy, SB RAS, Pr. Ac. Koptyuga 3, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Ul. Pirogova 2, Novosibirsk 630090 (Russian Federation); Drebushchak, T.N. [Novosibirsk State University, Ul. Pirogova 2, Novosibirsk 630090 (Russian Federation); Institute of Solid State Chemistry and Mechanochemistry, SB RAS, Ul. Kutateladze 18, Novosibirsk 630128 (Russian Federation)

    2015-02-15

    Highlights: • New phase transition in Ag{sub 4}SSe was discovered with scanning calorimetry and supported with X-ray powder diffraction. • The thermal effect relates to the anomaly in electrical and thermal conductivity of Ag{sub 4}SSe. • Similar thermal and electrical effects in K{sub 3}Cu{sub 8}S{sub 6} are explained with the metal-insulator transition. - Abstract: New phase transition (285 K) in low-temperature monoclinic Ag{sub 4}SSe was found out below the α-β transition (358 K) after the measurements with differential scanning calorimetry. The transition reveals significant hysteresis (over 30 K). X-ray powder diffraction shows that the superlattice with doubled a and b parameters of the unit cell exists below the new transition point. The signs of this new phase transition can be found in thermal and electrical conductivity of Ag{sub 4}SSe published in literature. Elusive phase transition in Ag{sub 2}Se shows similar properties. The new transition is likely related to the metal-insulator type transition, like K{sub 3}Cu{sub 8}S{sub 6}.

  6. Pressure-induced metal-insulator transition in spinel compound CuV2S4

    International Nuclear Information System (INIS)

    Okada, H.; Koyama, K.; Hedo, M.; Uwatoko, Y.; Watanabe, K.

    2008-01-01

    In order to investigate the pressure effect on electrical properties of CuV 2 S 4 , we performed the electrical resistivity measurements under high pressures up to 8 GPa for a high-quality polycrystalline sample. The charge density wave (CDW) transition temperatures increase with increasing pressure. The residual resistivity rapidly increases with increasing pressure over 4 GPa, and the temperature dependence of the electrical resistivity at 8 GPa exhibits a semiconducting behavior below about 150 K, indicating that a pressure-induced metal-insulator transition occurs in CuV 2 S 4 at 8 GPa

  7. Phase coexistence in the metal-insulator transition of a VO2 thin film

    International Nuclear Information System (INIS)

    Chang, Y.J.; Koo, C.H.; Yang, J.S.; Kim, Y.S.; Kim, D.H.; Lee, J.S.; Noh, T.W.; Kim, Hyun-Tak; Chae, B.G.

    2005-01-01

    Vanadium dioxide (VO 2 ) shows a metal-insulator transition (MIT) near room temperature, accompanied by an abrupt resistivity change. Since the MIT of VO 2 is known to be a first order phase transition, it is valuable to check metallic and insulating phase segregation during the MIT process. We deposited (100)-oriented epitaxial VO 2 thin films on R-cut sapphire substrates. From the scanning tunneling spectroscopy (STS) spectra, we could distinguish metallic and insulating regions by probing the band gap. Optical spectroscopic analysis also supported the view that the MIT in VO 2 occurs through metal and insulator phase coexistence

  8. Electric field-triggered metal-insulator transition resistive switching of bilayered multiphasic VOx

    Science.gov (United States)

    Won, Seokjae; Lee, Sang Yeon; Hwang, Jungyeon; Park, Jucheol; Seo, Hyungtak

    2018-01-01

    Electric field-triggered Mott transition of VO2 for next-generation memory devices with sharp and fast resistance-switching response is considered to be ideal but the formation of single-phase VO2 by common deposition techniques is very challenging. Here, VOx films with a VO2-dominant phase for a Mott transition-based metal-insulator transition (MIT) switching device were successfully fabricated by the combined process of RF magnetron sputtering of V metal and subsequent O2 annealing to form. By performing various material characterizations, including scanning transmission electron microscopy-electron energy loss spectroscopy, the film is determined to have a bilayer structure consisting of a VO2-rich bottom layer acting as the Mott transition switching layer and a V2O5/V2O3 mixed top layer acting as a control layer that suppresses any stray leakage current and improves cyclic performance. This bilayer structure enables excellent electric field-triggered Mott transition-based resistive switching of Pt-VOx-Pt metal-insulator-metal devices with a set/reset current ratio reaching 200, set/reset voltage of less than 2.5 V, and very stable DC cyclic switching upto 120 cycles with a great set/reset current and voltage distribution less than 5% of standard deviation at room temperature, which are specifications applicable for neuromorphic or memory device applications. [Figure not available: see fulltext.

  9. Two-order parameters theory of the metal-insulator phase transition kinetics in the magnetic field

    Science.gov (United States)

    Dubovskii, L. B.

    2018-05-01

    The metal-insulator phase transition is considered within the framework of the Ginzburg-Landau approach for the phase transition described with two coupled order parameters. One of the order parameters is the mass density which variation is responsible for the origin of nonzero overlapping of the two different electron bands and the appearance of free electron carriers. This transition is assumed to be a first-order phase one. The free electron carriers are described with the vector-function representing the second-order parameter responsible for the continuous phase transition. This order parameter determines mostly the physical properties of the metal-insulator transition and leads to a singularity of the surface tension at the metal-insulator interface. The magnetic field is involved into the consideration of the system. The magnetic field leads to new singularities of the surface tension at the metal-insulator interface and results in a drastic variation of the phase transition kinetics. A strong singularity in the surface tension results from the Landau diamagnetism and determines anomalous features of the metal-insulator transition kinetics.

  10. Multilevel radiative thermal memory realized by the hysteretic metal-insulator transition of vanadium dioxide

    International Nuclear Information System (INIS)

    Ito, Kota; Nishikawa, Kazutaka; Iizuka, Hideo

    2016-01-01

    Thermal information processing is attracting much interest as an analog of electronic computing. We experimentally demonstrated a radiative thermal memory utilizing a phase change material. The hysteretic metal-insulator transition of vanadium dioxide (VO 2 ) allows us to obtain a multilevel memory. We developed a Preisach model to explain the hysteretic radiative heat transfer between a VO 2 film and a fused quartz substrate. The transient response of our memory predicted by the Preisach model agrees well with the measured response. Our multilevel thermal memory paves the way for thermal information processing as well as contactless thermal management

  11. Metal-insulator transition in one-dimensional lattices with chaotic energy sequences

    International Nuclear Information System (INIS)

    Pinto, R.A.; Rodriguez, M.; Gonzalez, J.A.; Medina, E.

    2005-01-01

    We study electronic transport through a one-dimensional array of sites by using a tight binding Hamiltonian, whose site-energies are drawn from a chaotic sequence. The correlation degree between these energies is controlled by a parameter regulating the dynamic Lyapunov exponent measuring the degree of chaos. We observe the effect of chaotic sequences on the localization length, conductance, conductance distribution and wave function, finding evidence of a metal-insulator transition (MIT) at a critical degree of chaos. The one-dimensional metallic phase is characterized by a Gaussian conductance distribution and exhibits a peculiar non-selfaveraging

  12. Metal-insulator transition in one-dimensional lattices with chaotic energy sequences

    Energy Technology Data Exchange (ETDEWEB)

    Pinto, R.A. [Laboratorio de Fisica Estadistica, Centro de Fisica, Instituto Venezolano de Investigaciones Cientificas, Apartado 21827, Caracas 1020-A (Venezuela)]. E-mail: ripinto@ivic.ve; Rodriguez, M. [Laboratorio de Fisica Estadistica, Centro de Fisica, Instituto Venezolano de Investigaciones Cientificas, Apartado 21827, Caracas 1020-A (Venezuela); Gonzalez, J.A. [Laboratorio de Fisica Computacional, Centro de Fisica, Instituto Venezolano de Investigaciones Cientificas, Apartado 21827, Caracas 1020-A (Venezuela); Medina, E. [Laboratorio de Fisica Estadistica, Centro de Fisica, Instituto Venezolano de Investigaciones Cientificas, Apartado 21827, Caracas 1020-A (Venezuela)

    2005-06-20

    We study electronic transport through a one-dimensional array of sites by using a tight binding Hamiltonian, whose site-energies are drawn from a chaotic sequence. The correlation degree between these energies is controlled by a parameter regulating the dynamic Lyapunov exponent measuring the degree of chaos. We observe the effect of chaotic sequences on the localization length, conductance, conductance distribution and wave function, finding evidence of a metal-insulator transition (MIT) at a critical degree of chaos. The one-dimensional metallic phase is characterized by a Gaussian conductance distribution and exhibits a peculiar non-selfaveraging.

  13. Multilevel radiative thermal memory realized by the hysteretic metal-insulator transition of vanadium dioxide

    Energy Technology Data Exchange (ETDEWEB)

    Ito, Kota, E-mail: kotaito@mosk.tytlabs.co.jp; Nishikawa, Kazutaka; Iizuka, Hideo [Toyota Central Research and Development Labs, Nagakute, Aichi 480-1192 (Japan)

    2016-02-01

    Thermal information processing is attracting much interest as an analog of electronic computing. We experimentally demonstrated a radiative thermal memory utilizing a phase change material. The hysteretic metal-insulator transition of vanadium dioxide (VO{sub 2}) allows us to obtain a multilevel memory. We developed a Preisach model to explain the hysteretic radiative heat transfer between a VO{sub 2} film and a fused quartz substrate. The transient response of our memory predicted by the Preisach model agrees well with the measured response. Our multilevel thermal memory paves the way for thermal information processing as well as contactless thermal management.

  14. Metal-Insulator Transition Revisited for Cold Atoms in Non-Abelian Gauge Potentials

    International Nuclear Information System (INIS)

    Satija, Indubala I.; Dakin, Daniel C.; Clark, Charles W.

    2006-01-01

    We discuss the possibility of realizing metal-insulator transitions with ultracold atoms in two-dimensional optical lattices in the presence of artificial gauge potentials. For Abelian gauges, such transitions occur when the magnetic flux penetrating the lattice plaquette is an irrational multiple of the magnetic flux quantum. Here we present the first study of these transitions for non-Abelian U(2) gauge fields. In contrast to the Abelian case, the spectrum and localization transition in the non-Abelian case is strongly influenced by atomic momenta. In addition to determining the localization boundary, the momentum fragments the spectrum. Other key characteristics of the non-Abelian case include the absence of localization for certain states and satellite fringes around the Bragg peaks in the momentum distribution and an interesting possibility that the transition can be tuned by the atomic momenta

  15. Mott metal-insulator transition in the doped Hubbard-Holstein model

    Science.gov (United States)

    Kurdestany, Jamshid Moradi; Satpathy, S.

    2017-08-01

    Motivated by the current interest in the understanding of the Mott insulators away from half-filling, observed in many perovskite oxides, we study the Mott metal-insulator transition in the doped Hubbard-Holstein model using the Hartree-Fock mean field theory. The Hubbard-Holstein model is the simplest model containing both the Coulomb and the electron-lattice interactions, which are important ingredients in the physics of the perovskite oxides. In contrast to the half-filled Hubbard model, which always results in a single phase (either metallic or insulating), our results show that away from half-filling, a mixed phase of metallic and insulating regions occurs. As the dopant concentration is increased, the metallic part progressively grows in volume, until it exceeds the percolation threshold, leading to percolative conduction. This happens above a critical dopant concentration δc, which, depending on the strength of the electron-lattice interaction, can be a significant fraction of unity. This means that the material could be insulating even for a substantial amount of doping, in contrast to the expectation that doped holes would destroy the insulating behavior of the half-filled Hubbard model. While effects of fluctuation beyond the mean field remain an open question, our results provide a starting point for the understanding of the density-driven metal-insulator transition observed in many complex oxides.

  16. Thermal radiative near field transport between vanadium dioxide and silicon oxide across the metal insulator transition

    Energy Technology Data Exchange (ETDEWEB)

    Menges, F.; Spieser, M.; Riel, H.; Gotsmann, B., E-mail: bgo@zurich.ibm.com [IBM Research-Zurich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Dittberner, M. [IBM Research-Zurich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Photonics Laboratory, ETH Zurich, 8093 Zurich (Switzerland); Novotny, L. [Photonics Laboratory, ETH Zurich, 8093 Zurich (Switzerland); Passarello, D.; Parkin, S. S. P. [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States)

    2016-04-25

    The thermal radiative near field transport between vanadium dioxide and silicon oxide at submicron distances is expected to exhibit a strong dependence on the state of vanadium dioxide which undergoes a metal-insulator transition near room temperature. We report the measurement of near field thermal transport between a heated silicon oxide micro-sphere and a vanadium dioxide thin film on a titanium oxide (rutile) substrate. The temperatures of the 15 nm vanadium dioxide thin film varied to be below and above the metal-insulator-transition, and the sphere temperatures were varied in a range between 100 and 200 °C. The measurements were performed using a vacuum-based scanning thermal microscope with a cantilevered resistive thermal sensor. We observe a thermal conductivity per unit area between the sphere and the film with a distance dependence following a power law trend and a conductance contrast larger than 2 for the two different phase states of the film.

  17. Light scattering by epitaxial VO{sub 2} films near the metal-insulator transition point

    Energy Technology Data Exchange (ETDEWEB)

    Lysenko, Sergiy, E-mail: sergiy.lysenko@upr.edu; Fernández, Felix; Rúa, Armando; Figueroa, Jose; Vargas, Kevin; Cordero, Joseph [Department of Physics, University of Puerto Rico, Mayaguez, Puerto Rico 00681 (United States); Aparicio, Joaquin [Department of Physics, University of Puerto Rico-Ponce, Ponce, Puerto Rico 00732 (United States); Sepúlveda, Nelson [Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824 (United States)

    2015-05-14

    Experimental observation of metal-insulator transition in epitaxial films of vanadium dioxide is reported. Hemispherical angle-resolved light scattering technique is applied for statistical analysis of the phase transition processes on mesoscale. It is shown that the thermal hysteresis strongly depends on spatial frequency of surface irregularities. The transformation of scattering indicatrix depends on sample morphology and is principally different for the thin films with higher internal elastic strain and for the thicker films where this strain is suppressed by introduction of misfit dislocations. The evolution of scattering indicatrix, fractal dimension, surface power spectral density, and surface autocorrelation function demonstrates distinctive behavior which elucidates the influence of structural defects and strain on thermal hysteresis, twinning of microcrystallites, and domain formation during the phase transition.

  18. Quantum criticality around metal-insulator transitions of strongly correlated electron systems

    Science.gov (United States)

    Misawa, Takahiro; Imada, Masatoshi

    2007-03-01

    Quantum criticality of metal-insulator transitions in correlated electron systems is shown to belong to an unconventional universality class with violation of the Ginzburg-Landau-Wilson (GLW) scheme formulated for symmetry breaking transitions. This unconventionality arises from an emergent character of the quantum critical point, which appears at the marginal point between the Ising-type symmetry breaking at nonzero temperatures and the topological transition of the Fermi surface at zero temperature. We show that Hartree-Fock approximations of an extended Hubbard model on square lattices are capable of such metal-insulator transitions with unusual criticality under a preexisting symmetry breaking. The obtained universality is consistent with the scaling theory formulated for Mott transitions and with a number of numerical results beyond the mean-field level, implying that preexisting symmetry breaking is not necessarily required for the emergence of this unconventional universality. Examinations of fluctuation effects indicate that the obtained critical exponents remain essentially exact beyond the mean-field level. It further clarifies the whole structure of singularities by a unified treatment of the bandwidth-control and filling-control transitions. Detailed analyses of the criticality, containing diverging carrier density fluctuations around the marginal quantum critical point, are presented from microscopic calculations and reveal the nature as quantum critical “opalescence.” The mechanism of emerging marginal quantum critical point is ascribed to a positive feedback and interplay between the preexisting gap formation present even in metals and kinetic energy gain (loss) of the metallic carrier. Analyses of crossovers between GLW type at nonzero temperature and topological type at zero temperature show that the critical exponents observed in (V,Cr)2O3 and κ-ET -type organic conductors provide us with evidence for the existence of the present marginal

  19. Electronic Structure Evolution across the Peierls Metal-Insulator Transition in a Correlated Ferromagnet

    Directory of Open Access Journals (Sweden)

    P. A. Bhobe

    2015-10-01

    Full Text Available Transition metal compounds often undergo spin-charge-orbital ordering due to strong electron-electron correlations. In contrast, low-dimensional materials can exhibit a Peierls transition arising from low-energy electron-phonon-coupling-induced structural instabilities. We study the electronic structure of the tunnel framework compound K_{2}Cr_{8}O_{16}, which exhibits a temperature-dependent (T-dependent paramagnetic-to-ferromagnetic-metal transition at T_{C}=180  K and transforms into a ferromagnetic insulator below T_{MI}=95  K. We observe clear T-dependent dynamic valence (charge fluctuations from above T_{C} to T_{MI}, which effectively get pinned to an average nominal valence of Cr^{+3.75} (Cr^{4+}∶Cr^{3+} states in a 3∶1 ratio in the ferromagnetic-insulating phase. High-resolution laser photoemission shows a T-dependent BCS-type energy gap, with 2G(0∼3.5(k_{B}T_{MI}∼35  meV. First-principles band-structure calculations, using the experimentally estimated on-site Coulomb energy of U∼4  eV, establish the necessity of strong correlations and finite structural distortions for driving the metal-insulator transition. In spite of the strong correlations, the nonintegral occupancy (2.25 d-electrons/Cr and the half-metallic ferromagnetism in the t_{2g} up-spin band favor a low-energy Peierls metal-insulator transition.

  20. Substitution effect on metal-insulator transition of K2V8O16

    International Nuclear Information System (INIS)

    Isobe, Masahiko; Koishi, Shigenori; Yamazaki, Satoshi; Yamaura, Jun-ichi; Gotou, Hirotada; Yagi, Takehiko; Ueda, Yutaka

    2009-01-01

    The effect of the substitution of various ions on the metal-insulator (MI) transition at 170 K in K 2 V 8 O 16 has been investigated. Both Rb and Ti form complete solid solution systems: K 2-x Rb x V 8 O 16 and K 2 V 8-y Ti y O 16 , respectively. The substitution of Rb for K or of Ti for V splits the transition into two transitions: the high-temperature transition is a first-order MI transition from a tetragonal structure to a tetragonal structure, and the low-temperature transition is a second-order transition to a monoclinic structure. In K 2-x Rb x V 8 O 16 , the former terminates to an MI transition at around 220 K in Rb 2 V 8 O 16 , while the latter disappears at x > 0.6. In K 2 V 8-y Ti y O 16 , both transitions disappear at y > 0.5. The substitution of Cr for V also results in a similar splitting of the transition and the rapid disappearance of both transitions. The substitution of Na or Ba for K suppresses the MI transition without any splitting of the transition, although the solubility of both ions is limited. These substitution effects reveal that the MI transition of K 2 V 8 O 16 consists of two parts: a first-order MI transition and a parasitic second-order structural transition; the substitution of some ions causes a clear splitting of these transitions, probably due to the difference between the chemical pressure effects on the two transitions. The first-order MI transition is very sensitive to charge randomness, suggesting the charge ordering nature of the MI transition, while the second-order structural transition is very sensitive to both charge and structural randomnesses. (author)

  1. The electronic structure and metal-insulator transitions in vanadium oxides

    International Nuclear Information System (INIS)

    Mossanek, Rodrigo Jose Ochekoski

    2010-01-01

    The electronic structure and metal-insulator transitions in vanadium oxides (SrVO_3, CaVO_3, LaVO_3 and YVO_3) are studied here. The purpose is to show a new interpretation to the spectra which is coherent with the changes across the metal-insulator transition. The main experimental techniques are the X-ray photoemission (PES) and X-ray absorption (XAS) spectroscopies. The spectra are interpreted with cluster model, band structure and atomic multiplet calculations. The presence of charge-transfer satellites in the core-level PES spectra showed that these vanadium oxides cannot be classified in the Mott-Hubbard regime. Further, the valence band and core-level spectra presented a similar behavior across the metal insulator transition. In fact, the structures in the spectra and their changes are determined by the different screening channels present in the metallic or insulating phases. The calculated spectral weight showed that the coherent fluctuations dominate the spectra at the Fermi level and give the metallic character to the SrVO_3 and CaVO_3 compounds. The vanishing of this charge fluctuation and the replacement by the Mott-Hubbard screening in the LaVO_3 and YVO_3 systems is ultimately responsible for the opening of a band gap and the insulating character. Further, the correlation effects are, indeed, important to the occupied electronic structure (coherent and incoherent peaks). On the other hand, the unoccupied electronic structure is dominated by exchange and crystal field effects (t2g and eg sub-bands of majority and minority spins). The optical conductivity spectrum was obtained by convoluting the removal and addition states. It showed that the oxygen states, as well as the crystal field and exchange effects are necessary to correctly compare and interpret the experimental results. Further, a correlation at the charge-transfer region of the core-level and valence band optical spectra was observed, which could be extended to other transition metal oxides

  2. Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.

    Science.gov (United States)

    Bragaglia, Valeria; Arciprete, Fabrizio; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella

    2016-04-01

    Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows.

  3. Charge disproportionation in RNiO3 at the metal-insulator transition

    International Nuclear Information System (INIS)

    Alonso, J.A.; Martinez-Lope, M.J.; Casais, M.T.; Garcia-Munoz, J.L.; Fernandez-Diaz, M.T.; Aranda, M.A.G.

    1999-01-01

    Complete text of publication follows. Neutron and synchrotron diffraction data provide the first observation of changes in the crystal symmetry at the metal-insulator (MI) transition in RNiO 3 perovskites [1]. At high temperatures, YNiO 3 is orthorhombic and metallic but below T MI = 582 K it changes to a monoclinic insulator. The monoclinic symmetry is due to a partial 2 Ni 3+ → Ni 3+δ + Ni 3-δ charge disproportionation associated to the MI transition. In the insulating state the presence of two NiO 6 octahedra is reported with, respectively, expanded (Ni1) and contracted (Ni2) Ni-O bonds, that alternated along the three directions of the crystal. Corroborating the charge disproportion, unequal moments are found at Ni1 and Ni2 octahedra in the low temperature monoclinic phase. (author) J.A. Alonso et al, Phys. Rev. Lett. in press

  4. Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

    Science.gov (United States)

    Bragaglia, Valeria; Arciprete, Fabrizio; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella

    2016-04-01

    Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows.

  5. Metal-insulator transition in nanocomposite VO{sub x} films formed by anodic electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Tsui, Lok-kun; Lu, Jiwei; Zangari, Giovanni, E-mail: gz3e@virginia.edu [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States); Hildebrand, Helga; Schmuki, Patrik [Department for Materials Science LKO, University of Erlangen-Nuremberg, Martensstr. 7, D-91058 Erlangen (Germany)

    2013-11-11

    The ability to grow VO{sub 2} films by electrochemical methods would open a low-cost, easily scalable production route to a number of electronic devices. We have synthesized VO{sub x} films by anodic electrodeposition of V{sub 2}O{sub 5}, followed by partial reduction by annealing in Ar. The resulting films are heterogeneous, consisting of various metallic/oxide phases and including regions with VO{sub 2} stoichiometry. A gradual metal insulator transition with a nearly two order of magnitude change in film resistance is observed between room temperature and 140 °C. In addition, the films exhibit a temperature coefficient of resistance of ∼ −2.4%/ °C from 20 to 140 °C.

  6. Surface antiferromagnetism and incipient metal-insulator transition in strained manganite films

    KAUST Repository

    Cossu, Fabrizio; Colizzi, G.; Filippetti, A.; Fiorentini, Vincenzo; Schwingenschlö gl, Udo

    2013-01-01

    Using first-principles calculations, we show that the (001) surface of the ferromagnet La0.7Sr0.3MnO3 under an epitaxial compressive strain favors antiferromagnetic (AF) order in the surface layers, coexisting with ferromagnetic (FM) bulk order. Surface antiferromagnetism is accompanied by a very marked surface-related spectral pseudogap, signaling an incomplete metal-insulator transition at the surface. The different relaxation and rumpling of the MnO2 and LaO surface planes in the two competing magnetic phases cause distinct work-function changes, which are of potential diagnostic use. The AF phase is recognized as an extreme surface-assisted case of the combination of in-plane AF super-exchange and vertical FM double-exchange couplings that rules magnetism in manganites under in-plane compression.

  7. Dynamic conductivity from audio to optical frequencies of semiconducting manganites approaching the metal-insulator transition

    Science.gov (United States)

    Lunkenheimer, P.; Mayr, F.; Loidl, A.

    2006-07-01

    We report the frequency-dependent conductivity of the manganite system La1-xSrxMnO3 (x0.2) when approaching the metal-insulator transition from the insulating side. Results from low-frequency dielectric measurements are combined with spectra in the infrared region. For low doping levels the behavior is dominated by hopping transport of localized charge carriers at low frequencies and by phononic and electronic excitations in the infrared region. For the higher Sr contents the approach of the metallic state is accompanied by the successive suppression of the hopping contribution at low frequencies and by the development of polaronic excitations in the infrared region, which finally become superimposed by a strong Drude contribution in the fully metallic state.

  8. Dynamic conductivity from audio to optical frequencies of semiconducting manganites approaching the metal-insulator transition

    International Nuclear Information System (INIS)

    Lunkenheimer, P.; Mayr, F.; Loidl, A.

    2006-01-01

    We report the frequency-dependent conductivity of the manganite system La 1-x Sr x MnO 3 (x≤0.2) when approaching the metal-insulator transition from the insulating side. Results from low-frequency dielectric measurements are combined with spectra in the infrared region. For low doping levels the behavior is dominated by hopping transport of localized charge carriers at low frequencies and by phononic and electronic excitations in the infrared region. For the higher Sr contents the approach of the metallic state is accompanied by the successive suppression of the hopping contribution at low frequencies and by the development of polaronic excitations in the infrared region, which finally become superimposed by a strong Drude contribution in the fully metallic state. (Abstract Copyright [2006], Wiley Periodicals, Inc.)

  9. Surface antiferromagnetism and incipient metal-insulator transition in strained manganite films

    KAUST Repository

    Cossu, Fabrizio

    2013-06-21

    Using first-principles calculations, we show that the (001) surface of the ferromagnet La0.7Sr0.3MnO3 under an epitaxial compressive strain favors antiferromagnetic (AF) order in the surface layers, coexisting with ferromagnetic (FM) bulk order. Surface antiferromagnetism is accompanied by a very marked surface-related spectral pseudogap, signaling an incomplete metal-insulator transition at the surface. The different relaxation and rumpling of the MnO2 and LaO surface planes in the two competing magnetic phases cause distinct work-function changes, which are of potential diagnostic use. The AF phase is recognized as an extreme surface-assisted case of the combination of in-plane AF super-exchange and vertical FM double-exchange couplings that rules magnetism in manganites under in-plane compression.

  10. Metal-insulator transition in disordered systems from the one-body density matrix

    DEFF Research Database (Denmark)

    Olsen, Thomas; Resta, Raffaele; Souza, Ivo

    2017-01-01

    The insulating state of matter can be probed by means of a ground state geometrical marker, which is closely related to the modern theory of polarization (based on a Berry phase). In the present work we show that this marker can be applied to determine the metal-insulator transition in disordered...... the one-body density matrix. The approach has a general ab initio formulation and could in principle be applied to realistic disordered materials by standard electronic structure methods....... systems. In particular, for noninteracting systems the geometrical marker can be obtained from the configurational average of the norm-squared one-body density matrix, which can be calculated within open as well as periodic boundary conditions. This is in sharp contrast to a classification based...

  11. Electronic Structure of the Pyrochlore-Type Ru Oxides through the Metal--Insulator Transition

    International Nuclear Information System (INIS)

    Okamoto, J.; Fujimori, S.I.; Okane, T.; Fujimori, A.; Abbate, M.; Yoshii, S.; Sato, M.

    2003-01-01

    The electronic structures of the pyrochlore-type Ru oxides Sm 2-x Ca x Ru 2 O 7 and Sm 2-x Bi x Ru 2 O 7 , which show metal-insulator transition with increasing Ca or Bi concentration, have been studied by ultraviolet photoemission spectroscopy. Spectral changes near the Fermi level are different but reflect the tendency of their transport properties in both systems. The Sm 2-x Ca x Ru 2 O 7 system shows an energy shift, which is expected from the increase of hole in the Ru 4d t 2g band and the Sm 2 - x Bi x Ru 2 O 7 system shows spectral weight transfer within the Ru 4d t 2g band, which is expected to be observed in bandwidth-control Mott-Hubbard system. (author)

  12. Critical metal-insulator transition and divergence in a two-particle irreducible vertex in disordered and interacting electron systems

    Czech Academy of Sciences Publication Activity Database

    Janiš, Václav; Pokorný, Vladislav

    2014-01-01

    Roč. 90, č. 4 (2014), "045143-1"-"045143-11" ISSN 1098-0121 Institutional support: RVO:68378271 Keywords : metal-insulator transition * disordered and interacting electron systems * dynamical mean-field theory * critical behavior Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

  13. Metal-insulator transition in NiS.sub.2-x./sub.Se.sub.x./sub

    Czech Academy of Sciences Publication Activity Database

    Kuneš, Jan; Baldassarre, L.; Schachner, B.; Rabia, K.; Kuntscher, C.A.; Korotin, D. M.; Anisimov, V.I.; McLeod, J.A.; Kurmaev, E.Z.; Moewes, A.

    2010-01-01

    Roč. 81, č. 3 (2010), 035112/1-035112/6 ISSN 1098-0121 Institutional research plan: CEZ:AV0Z10100521 Keywords : metal-insulator transition * dynamical mean-field theory Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.772, year: 2010 http://prb.aps.org/abstract/PRB/v81/i3/e035122

  14. New Light on the Metal-Insulator Transition in VO2: A Terahertz Perspective

    DEFF Research Database (Denmark)

    Jepsen, Peter Uhd; Fischer, Bernd M.; Thoman, Andreas

    2005-01-01

    We investigate the metal-insulator (MI) transition in vanadium dioxide (VO2), thin films with Terahertz Time-Domains Spectroscopy (THz-TDS). The capability of detecting both amplitude and phase of the transmission characteristics as the phase of the transmitted THz signal switches at a markedly...

  15. Metal-Insulator Phase Transition in Quasi-One-Dimensional VO2 Structures

    Directory of Open Access Journals (Sweden)

    Woong-Ki Hong

    2015-01-01

    Full Text Available The metal-insulator transition (MIT in strongly correlated oxides has attracted considerable attention from both theoretical and experimental researchers. Among the strongly correlated oxides, vanadium dioxide (VO2 has been extensively studied in the last decade because of a sharp, reversible change in its optical, electrical, and magnetic properties at approximately 341 K, which would be possible and promising to develop functional devices with advanced technology by utilizing MITs. However, taking the step towards successful commercialization requires the comprehensive understanding of MIT mechanisms, enabling us to manipulate the nature of transitions. In this regard, recently, quasi-one-dimensional (quasi-1D VO2 structures have been intensively investigated due to their attractive geometry and unique physical properties to observe new aspects of transitions compared with their bulk counterparts. Thus, in this review, we will address recent research progress in the development of various approaches for the modification of MITs in quasi-1D VO2 structures. Furthermore, we will review recent studies on realizing novel functional devices based on quasi-1D VO2 structures for a wide range of applications, such as a gas sensor, a flexible strain sensor, an electrical switch, a thermal memory, and a nonvolatile electrical memory with multiple resistance.

  16. Electroforming and Switching in Oxides of Transition Metals: The Role of Metal Insulator Transition in the Switching Mechanism

    Science.gov (United States)

    Chudnovskii, F. A.; Odynets, L. L.; Pergament, A. L.; Stefanovich, G. B.

    1996-02-01

    Electroforming and switching effects in sandwich structures based on anodic films of transition metal oxides (V, Nb, Ti, Fe, Ta, W, Zr, Hf, Mo) have been studied. After being electroformed, some materials exhibited current-controlled negative resistance with S-shapedV-Icharacteristics. For V, Fe, Ti, and Nb oxides, the temperature dependences of the threshold voltage have been measured. As the temperature increased,Vthdecreased to zero at a critical temperatureT0, which depended on the film material. Comparison of theT0values with the temperatures of metal-insulator phase transition for some compounds (Tt= 120 K for Fe3O4, 340 K for VO2, ∼500 K for Ti2O3, and 1070 K for NbO2) showed that switching was related to the transition in the applied electric field. Channels consisting of the above-mentioned lower oxides were formed in the initial anodic films during the electroforming. The possibility of formation of these oxides with a metal-insulator transition was confirmed by thermodynamic calculations.

  17. Spin-Driven Emergent Antiferromagnetism and Metal-Insulator Transition in Nanoscale p-Si

    Science.gov (United States)

    Lou, Paul C.; Kumar, Sandeep

    2018-04-01

    The entanglement of the charge, spin and orbital degrees of freedom can give rise to emergent behavior especially in thin films, surfaces and interfaces. Often, materials that exhibit those properties require large spin orbit coupling. We hypothesize that the emergent behavior can also occur due to spin, electron and phonon interactions in widely studied simple materials such as Si. That is, large intrinsic spin-orbit coupling is not an essential requirement for emergent behavior. The central hypothesis is that when one of the specimen dimensions is of the same order (or smaller) as the spin diffusion length, then non-equilibrium spin accumulation due to spin injection or spin-Hall effect (SHE) will lead to emergent phase transformations in the non-ferromagnetic semiconductors. In this experimental work, we report spin mediated emergent antiferromagnetism and metal insulator transition in a Pd (1 nm)/Ni81Fe19 (25 nm)/MgO (1 nm)/p-Si (~400 nm) thin film specimen. The spin-Hall effect in p-Si, observed through Rashba spin-orbit coupling mediated spin-Hall magnetoresistance behavior, is proposed to cause the spin accumulation and resulting emergent behavior. The phase transition is discovered from the diverging behavior in longitudinal third harmonic voltage, which is related to the thermal conductivity and heat capacity.

  18. Magnetic states, correlation effects and metal-insulator transition in FCC lattice

    Science.gov (United States)

    Timirgazin, M. A.; Igoshev, P. A.; Arzhnikov, A. K.; Irkhin, V. Yu

    2016-12-01

    The ground-state magnetic phase diagram (including collinear and spiral states) of the single-band Hubbard model for the face-centered cubic lattice and related metal-insulator transition (MIT) are investigated within the slave-boson approach by Kotliar and Ruckenstein. The correlation-induced electron spectrum narrowing and a comparison with a generalized Hartree-Fock approximation allow one to estimate the strength of correlation effects. This, as well as the MIT scenario, depends dramatically on the ratio of the next-nearest and nearest electron hopping integrals {{t}\\prime}/t . In contrast with metallic state, possessing substantial band narrowing, insulator one is only weakly correlated. The magnetic (Slater) scenario of MIT is found to be superior over the Mott one. Unlike simple and body-centered cubic lattices, MIT is the first order transition (discontinuous) for most {{t}\\prime}/t . The insulator state is type-II or type-III antiferromagnet, and the metallic state is spin-spiral, collinear antiferromagnet or paramagnet depending on {{t}\\prime}/t . The picture of magnetic ordering is compared with that in the standard localized-electron (Heisenberg) model.

  19. Metal-insulator transition in 2D: the role of interactions and disorder

    International Nuclear Information System (INIS)

    Kastrinakis, George

    2007-01-01

    We present a model for the metal-insulator transition in 2D, observed in the recent years. Our starting point consists of two ingredients only, which are ubiquitous in the experiments: Coulomb interactions and weak disorder spin scattering (coming from the interfaces of the heterostructures in question). In a diagramatic approach, we predict the existence of a characteristic temperature T 0 =T 0 (n,ω H ), n being the density of carriers, and ω H the Zeeman energy, below which these systems become metallic, due to the onset of strong spin-density correlations. This is in very good agreement with experiments, and corroborates the fact that varying n and ω H are equivalent ways into/out of the metallic regime. The conductivity, calculated as a function of temperature and ω H in the metallic state, compares favorably to experiment. Moreover, we give an explicit expression for the conventional weak disorder contributions to the conductivity in the frame of our model. We comment on the nature of the transition, we calculate the specific heat of the system and we discuss the fate of the metallic state in the limit of zero temperature

  20. Excitonic metal-insulator phase transition of the Mott type in compressed calcium

    Science.gov (United States)

    Voronkova, T. O.; Sarry, A. M.; Sarry, M. F.; Skidan, S. G.

    2017-05-01

    It has been experimentally found that, under the static compression of a calcium crystal at room temperature, it undergoes a series of structural phase transitions: face-centered cubic lattice → body-centered cubic lattice → simple cubic lattice. It has been decided to investigate precisely the simple cubic lattice (because it is an alternative lattice) with the aim of elucidating the possibility of the existence of other (nonstructural) phase transitions in it by using for this purpose the Hubbard model for electrons with half-filled ns-bands and preliminarily transforming the initial electronic system into an electron-hole system by means of the known Shiba operators (applicable only to alternative lattices). This transformation leads to the fact that, in the new system of fermions, instead of the former repulsion, there is an attraction between electrons and holes. Elementary excitations of this new system are bound boson pairs—excitons. This system of fermions has been quantitatively analyzed by jointly using the equation-of-motion method and the direct algebraic method. The numerical integration of the analytically exact transcendental equations derived from the first principles for alternative (one-, two-, and three-dimensional) lattices has demonstrated that, in systems of two-species (electrons + hole) fermions, temperature-induced metal-insulator phase transitions of the Mott type are actually possible. Moreover, all these crystals are in fact excitonic insulators. This conclusion is in complete agreement with the analytically exact calculations of the ground state of a one-dimensional crystal (with half-filled bands), which were performed by Lieb and Wu with the aim to find out the Mott insulator-metal transition of another type.

  1. Metal-insulator transition induced in CaVO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gu Man [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Laverock, Jude; Chen, Bo; Smith, Kevin E. [Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215 (United States); Wolf, Stuart A. [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States); Lu Jiwei [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States)

    2013-04-07

    Stoichiometric CaVO{sub 3} (CVO) thin films of various thicknesses were grown on single crystal SrTiO{sub 3} (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 {mu}A. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film ({approx}60 nm), thin films of CVO (2-4 nm) were more two-dimensional with the V charge state closer to V{sup 4+}.

  2. Metal-insulator transition induced in CaVO3 thin films

    International Nuclear Information System (INIS)

    Gu Man; Laverock, Jude; Chen, Bo; Smith, Kevin E.; Wolf, Stuart A.; Lu Jiwei

    2013-01-01

    Stoichiometric CaVO 3 (CVO) thin films of various thicknesses were grown on single crystal SrTiO 3 (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 μA. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film (∼60 nm), thin films of CVO (2–4 nm) were more two-dimensional with the V charge state closer to V 4+ .

  3. Direct detection of metal-insulator phase transitions using the modified Backus-Gilbert method

    Directory of Open Access Journals (Sweden)

    Ulybyshev Maksim

    2018-01-01

    Full Text Available The detection of the (semimetal-insulator phase transition can be extremely difficult if the local order parameter which characterizes the ordered phase is unknown. In some cases, it is even impossible to define a local order parameter: the most prominent example of such system is the spin liquid state. This state was proposed to exist in the Hubbard model on the hexagonal lattice in a region between the semimetal phase and the antiferromagnetic insulator phase. The existence of this phase has been the subject of a long debate. In order to detect these exotic phases we must use alternative methods to those used for more familiar examples of spontaneous symmetry breaking. We have modified the Backus-Gilbert method of analytic continuation which was previously used in the calculation of the pion quasiparticle mass in lattice QCD. The modification of the method consists of the introduction of the Tikhonov regularization scheme which was used to treat the ill-conditioned kernel. This modified Backus-Gilbert method is applied to the Euclidean propagators in momentum space calculated using the hybrid Monte Carlo algorithm. In this way, it is possible to reconstruct the full dispersion relation and to estimate the mass gap, which is a direct signal of the transition to the insulating state. We demonstrate the utility of this method in our calculations for the Hubbard model on the hexagonal lattice. We also apply the method to the metal-insulator phase transition in the Hubbard-Coulomb model on the square lattice.

  4. Metal-Insulator Phase Transition in thin VO2 films: A Look from the Far Infrared Side

    DEFF Research Database (Denmark)

    Jepsen, Peter Uhd; Fischer, B. M.; Thoman, A.

    Vanadium dioxide (VO2) displays a well-known metal-insulator (MI) transition at atemperature of 68oC. The MI transition in VO2 has been studied extensively by a widerange of optical, electrical, structural, and magnetic measurements. In spite of this there isstill some controversy about the nature...... temperature hysteresis of the far-infrared transmission through thethin film with temperature. Interestingly the temperature-dependent transmissionamplitude shows a markedly different switching temperature than the transmission phase.This effect has not been observed before, and is very important...

  5. Superlattice formation lifting degeneracy protected by nonsymmorphic symmetry through a metal-insulator transition in RuAs

    Science.gov (United States)

    Kotegawa, Hisashi; Takeda, Keiki; Kuwata, Yoshiki; Hayashi, Junichi; Tou, Hideki; Sugawara, Hitoshi; Sakurai, Takahiro; Ohta, Hitoshi; Harima, Hisatomo

    2018-05-01

    A single crystal of RuAs obtained with the Bi-flux method shows obvious successive metal-insulator transitions at TMI 1˜255 K and TMI 2˜195 K. The x-ray diffraction measurement reveals the formation of a superlattice of 3 ×3 ×3 of the original unit cell below TMI 2, accompanied by a change of the crystal system from the orthorhombic structure to the monoclinic one. Simple dimerization of the Ru ions is not seen in the ground state. The multiple As sites observed in the nuclear quadrupole resonance spectrum also demonstrate the formation of the superlattice in the ground state, which is clarified to be nonmagnetic. The divergence in 1 /T1 at TMI 1 shows that a symmetry lowering by the metal-insulator transition is accompanied by strong critical fluctuations of some degrees of freedom. Using the structural parameters in the insulating state, the first-principles calculation reproduces successfully the reasonable size of nuclear quadrupole frequencies νQ for the multiple As sites, ensuring the high validity of the structural parameters. The calculation also gives a remarkable suppression in the density of states near the Fermi level, although the gap opening is insufficient. A coupled modulation of the calculated Ru d -electron numbers and the crystal structure proposes the formation of a charge density wave in RuAs. Some lacking factors remain, but it is shown that a lifting of degeneracy protected by the nonsymmorphic symmetry through the superlattice formation is a key ingredient for the metal-insulator transition in RuAs.

  6. Influence of the disorder in doped germanium changed by compensation on the critical indices of the metal-insulator transition

    International Nuclear Information System (INIS)

    Rentzsch, R.; Reich, Ch.; Ionov, A.N.; Ginodman, V.; Slimak, I.; Fozooni, P.; Lea, M.J.

    1999-01-01

    We present a critical review of the present status of the critical exponent puzzle of the metal-insulator transition of doped semiconductors with the emphasis on the role of meso- and macroscopy inhomogeneity caused by the disorder of acceptors and donors in the crystals. By using the isotopic and engineering and the neutron transmutation doping of germanium we found for low compensations (at K = 1.4 and 12%) that the critical exponents of the localization length and the dielectric constant are nearly ν = 1/2 and ξ = 1, which double for medium compensations (at K = 39 and 54%) to ν 1 and ξ = 2, respectively

  7. Electric controlling of surface metal-insulator transition in the doped BaTiO3 film

    Directory of Open Access Journals (Sweden)

    Wei Xun

    2017-07-01

    Full Text Available Based on first-principles calculations, the BaTiO3(BTO film with local La-doping is studied. For a selected concentration and position of doping, the surface metal-insulator transition occurs under the applied electric field, and the domain appears near the surface for both bipolar states. Furthermore, for the insulated surface state, i.e., the downward polarization state in the doped film, the gradient bandgap structure is achieved, which favors the absorption of solar energy. Our investigation can provide an alternative avenue in modification of surface property and surface screening effect in polar materials.

  8. On the Mott transition and the new metal-insulator transitions in doped covalent and polar crystals

    International Nuclear Information System (INIS)

    Dzhumanov, S.; Begimkulov, U.; Kurbanov, U.T.; Yavidov, B.Y.

    2001-10-01

    The Mott transition and new metal-insulator transitions (MIT's) and their distinctive features in doped covalent semiconductors and polar compounds are studied within the continuum model of extrinsic carrier self-trapping, the Hubbard impurity band model (with on-site Coulomb repulsion and screening effects) and the extrinsic (bi)polaronic band model (with short- and long-range carrier-impurity, impurity-phonon and carrier-phonon interactions and intercarrier correlation) using the appropriate tight-binding approximations and variational methods. We have shown the formation possibility of large-radius localized one- and two-carrier impurity (or defect) states and narrow impurity bands in the band gap and charge transfer gap of these carrier-doped systems. The extrinsic Mott-Hubbard and (bi)polaronic insulating gaps are calculated exactly. The proper criterions for Mott transition, extrinsic excitonic and (bi)polaronic MIT's are obtained. We have demonstrated that the Mott transition occurs in doped covalent semiconductors (i.e. Si and Ge) and some insulators with weak carrier-phonon coupling near the large-radius dopants. While, in doped polar compounds (e.g. oxide high-T c superconductors (HTSC) and related materials) the MIT's are new extrinsic (or intrinsic) (bi)polaronic MIT's. We have found that the anisotropy of the dielectric (or (bi)polaronic) properties of doped cuprate HTSC is responsible for smooth (or continuous) MIT's, stripe formation and suppression of high-T c superconductivity. Various experimental results on in-gap states, bands and MIT's in doped covalent semiconductors, oxide HTSC and related materials are in good agreement with the developed theory of Mott transition and new (bi)polaronic MIT's. (author)

  9. Metal-insulator transition in AlxGa1-xAs/GaAs heterostructures with large spacer width

    Science.gov (United States)

    Gold, A.

    1991-10-01

    Analytical results are presented for the mobility of a two-dimensional electron gas in a heterostructure with a thick spacer layer α. Due to multiple-scattering effects a metal-insulator transition occurs at a critical electron density Nc=N1/2i/(4π1/2α) (Ni is the impurity density). The transport mean free path l(t) (calculated in Born approximation) at the metal-insulator transition is l(t)c=2α. A localization criterion in terms of the renormalized single-particle mean free path l(sr) is presented: kFcl(sr)c=(1/2)1/2 (kFc is the Fermi wave number at the critical density). I compare the theoretical results with recent experimental results found in AlxGa1-xAs/GaAs heterostructures with large spacer width: 1200<α<2800 Å. Remote impurity doping and homogeneous background doping are considered. The only fitting parameter used for the theoretical results is the background doping density NB=6×1013 cm-3. My theory is in fair agreement with the experimental results.

  10. Ca-site substitution induced a metal-insulator transition in manganite CaMnO3

    International Nuclear Information System (INIS)

    Sousa, D.; Nunes, M.R.; Silveira, C.; Matos, I.; Lopes, A.B.; Melo Jorge, M.E.

    2008-01-01

    A systematic study of the A-site doping in Mn(IV)-rich perovskite manganites Ca 1-x Ho x MnO 3 , over a large homogeneity range (0.1 ≤ x ≤ 0.4), has been performed. A significant increase in the lattice parameters indicated the presence of mixed valence state of Mn: Mn 3+ and Mn 4+ . The substitution of calcium by holmium also induces strong changes in the electrical properties. We found that small Ho concentration produces an important decrease in the electrical resistivity and induces an electrical transition, the temperature corresponding to the metal-insulator transition (T MI ) shifts with the holmium content. This electrical behavior is attributed to the Mn 3+ ions content and a charge order effect

  11. Metal-insulator transition in SrTi1−xVxO3 thin films

    International Nuclear Information System (INIS)

    Gu, Man; Wolf, Stuart A.; Lu, Jiwei

    2013-01-01

    Epitaxial SrTi 1−x V x O 3 (0 ≤ x ≤ 1) thin films were grown on (001)-oriented (LaAlO 3 ) 0.3 (Sr 2 AlTaO 6 ) 0.7 (LSAT) substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic corresponding to a Fermi liquid system. In the insulating phase (x < 0.67), the resistivity behavior was governed by Mott's variable range hopping mechanism. The possible mechanisms for the induced MIT are discussed, including the effects of electron correlation, lattice distortion, and Anderson localization

  12. The metal-insulator transition of RNiO3 perovskites. What can we learn from neutron diffraction?

    International Nuclear Information System (INIS)

    Medarde, M.L.

    1996-01-01

    RNiO 3 perovskites (R = rare earth) provide a remarkable opportunity to study the relationship between structural and physical properties since by moving along the 4f rare earth series, the evolution of several transport and magnetic properties can be nicely correlated to the steric effects associated with the lanthanide contraction. The most appealing example is probably the metal-insulator transition discovered for the compounds with R≠La, whose critical temperature T M-I increases with decreasing size of the rare earth ion. In this lecture, a summary of the most relevant neutron diffraction results on this system is presented. Moreover, the nickelates are used as an example to illustrate the performance of the diffractometers HRPT and DMCG to be installed at the SINQ. (author) 12 figs., 2 tabs., 17 refs

  13. Current-induced metal-insulator transition in VO x thin film prepared by rapid-thermal-annealing

    International Nuclear Information System (INIS)

    Cho, Choong-Rae; Cho, SungIl; Vadim, Sidorkin; Jung, Ranju; Yoo, Inkyeong

    2006-01-01

    The phenomenon of metal-insulator transition (MIT) in polycrystalline VO x thin films and their preparations have been studied. The films were prepared by sputtering of vanadium thin films succeeded by Rapid Thermal Annealing (RTA) in oxygen ambient at 500 deg. C. Crystalline, compositional, and morphological characterizations reveal a continuous change of phase from vanadium metal to the highest oxide phase, V 2 O 5 , with the time of annealing. Electrical MIT switching has been observed in these films. Sweeping mode, electrode area, and temperature dependent MIT has been studied in Pt/VO x /Pt vertical structure. The important parameters for MIT in VO x have been found to be the current density and the electric field, which depend on carrier density in the films

  14. The metal-insulator transition of RNiO{sub 3} perovskites. What can we learn from neutron diffraction?

    Energy Technology Data Exchange (ETDEWEB)

    Medarde, M L [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

    1996-11-01

    RNiO{sub 3} perovskites (R = rare earth) provide a remarkable opportunity to study the relationship between structural and physical properties since by moving along the 4f rare earth series, the evolution of several transport and magnetic properties can be nicely correlated to the steric effects associated with the lanthanide contraction. The most appealing example is probably the metal-insulator transition discovered for the compounds with R{ne}La, whose critical temperature T{sub M-I} increases with decreasing size of the rare earth ion. In this lecture, a summary of the most relevant neutron diffraction results on this system is presented. Moreover, the nickelates are used as an example to illustrate the performance of the diffractometers HRPT and DMCG to be installed at the SINQ. (author) 12 figs., 2 tabs., 17 refs.

  15. Magnetic Excitations across the Metal-Insulator Transition in the Pyrochlore Iridate Eu2Ir2O7

    Science.gov (United States)

    Chun, Sae Hwan; Yuan, Bo; Casa, Diego; Kim, Jungho; Kim, Chang-Yong; Tian, Zhaoming; Qiu, Yang; Nakatsuji, Satoru; Kim, Young-June

    2018-04-01

    We report a resonant inelastic x-ray scattering study of the magnetic excitation spectrum in a highly insulating Eu2 Ir2 O7 single crystal that exhibits a metal-insulator transition at TMI=111 (7 ) K . A propagating magnon mode with a 20 meV bandwidth and a 28 meV magnon gap is found in the excitation spectrum at 7 K, which is expected in the all-in-all-out magnetically ordered state. This magnetic excitation exhibits substantial softening as the temperature is raised towards TMI and turns into a highly damped excitation in the paramagnetic phase. Remarkably, the softening occurs throughout the whole Brillouin zone including the zone boundary. This observation is inconsistent with the magnon renormalization expected in a local moment system and indicates that the strength of the electron correlation in Eu2 Ir2 O7 is only moderate, so that electron itinerancy should be taken into account in describing its magnetism.

  16. Optical Response of Cu1-xZnxIr2S4 Due to Metal--Insulator Transition

    International Nuclear Information System (INIS)

    Chen, L.; Matsunami, M.; Nanba, T.; Cao, G.; Suzuki, H.; Isobe, M.; Matsumoto, T.

    2003-01-01

    The mother material CuIr 2 S 4 of the thiospinel system Cu 1-x Zn x Ir 2 S 4 undergoes a temperature-induced metal--insulator (Mi) transition. We report the temperature dependence of the optical reflection spectra of Cu 1-x Zn x Ir 2 S 4 (x ≤ 0.5) at the temperatures of 8-300 K in the energy regions of 0.005--30 eV in order to study the change in the electronic structure due to the Zn substitution for Cu. Zn substitution induced mainly the splitting of the hybridization band between the Ir-5d(t 2g ) and S-3 p states crossing the E F . Obtained optical conductivity (σ ) spectrum is discussed in relation to the change in the electronic structure close to the E F . (author)

  17. First-order metal-insulator transitions in the extended Hubbard model due to self-consistent screening of the effective interaction

    Science.gov (United States)

    Schüler, M.; van Loon, E. G. C. P.; Katsnelson, M. I.; Wehling, T. O.

    2018-04-01

    While the Hubbard model is the standard model to study Mott metal-insulator transitions, it is still unclear to what extent it can describe metal-insulator transitions in real solids, where nonlocal Coulomb interactions are always present. By using a variational principle, we clarify this issue for short- and long-range nonlocal Coulomb interactions for half-filled systems on bipartite lattices. We find that repulsive nonlocal interactions generally stabilize the Fermi-liquid regime. The metal-insulator phase boundary is shifted to larger interaction strengths to leading order linearly with nonlocal interactions. Importantly, nonlocal interactions can raise the order of the metal-insulator transition. We present a detailed analysis of how the dimension and geometry of the lattice as well as the temperature determine the critical nonlocal interaction leading to a first-order transition: for systems in more than two dimensions with nonzero density of states at the Fermi energy the critical nonlocal interaction is arbitrarily small; otherwise, it is finite.

  18. Metal-insulator transition in Si(111)-(4 x 1)/(8 x 2)-In studied by optical spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Speiser, E.; Hinrichs, K.; Cobet, C.; Esser, N. [Leibniz-Institut fuer Analytische Wissenschaften - ISAS - e.V., Albert-Einstein-Str. 9, 12489 Berlin (Germany); Chandola, S. [Leibniz-Institut fuer Analytische Wissenschaften - ISAS - e.V., Albert-Einstein-Str. 9, 12489 Berlin (Germany); School of Physics, Trinity College Dublin 2 (Ireland); Gensch, M. [Helmholtz Zentrum Berlin (Germany); Wippermann, S.; Schmidt, W.G. [Theoretische Physik, Universitaet Paderborn (Germany); Bechstedt, F. [Institut fuer Festkoerpertheorie und -Optik, Friedrich-Schiller-Universitaet, Jena (Germany); Richter, W. [Dipartimento di Fisica, Universita di Roma Tor Vergata, Via della Ricerca Scientifica 1, 00133 Roma (Italy); Fleischer, K.; McGilp, J.F. [School of Physics, Trinity College Dublin 2 (Ireland)

    2010-08-15

    Measurements of the surface vibrational modes and optical response of Si(111)-(4 x 1)/(8 x 2)-In are compiled and a comparison to ab initio calculations performed within DFT-LDA formalism is given. Surface resonant Raman spectroscopy allows identifying a number of surface phonons with high spectral precision. The phase transition of the (4 x 1)-(8 x 2) surface structure is found to be accompanied by characteristic changes of the surface phonons, which are discussed with respect to various structural models suggested. The optical anisotropy of the (8 x 2) phase shows that the anisotropic Drude tail of the (4 x 1) phase is replaced by two peaks at 0.50 and 0.72 eV. The spectroscopic signatures of the (4 x 1) and (8 x 2) phases agree with a metal-insulator transition. The mid-IR-anisotropic optical response of the insulating (8 x 2) phase is interpreted in terms of electronic single particle excitations between surface electronic bands related to the In-nanowire surface. Comparison of the measured optical transitions with DFT ab initio calculations for the hexagon model and the trimer model of the (8 x 2) structure shows evidence for the existence of the hexagon structure. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  19. Mg-doped VO2 nanoparticles: hydrothermal synthesis, enhanced visible transmittance and decreased metal-insulator transition temperature.

    Science.gov (United States)

    Zhou, Jiadong; Gao, Yanfeng; Liu, Xinling; Chen, Zhang; Dai, Lei; Cao, Chuanxiang; Luo, Hongjie; Kanahira, Minoru; Sun, Chao; Yan, Liuming

    2013-05-28

    This paper reports the successful preparation of Mg-doped VO2 nanoparticles via hydrothermal synthesis. The metal-insulator transition temperature (T(c)) decreased by approximately 2 K per at% Mg. The Tc decreased to 54 °C with 7.0 at% dopant. The composite foils made from Mg-doped VO2 particles displayed excellent visible transmittance (up to 54.2%) and solar modulation ability (up to 10.6%). In addition, the absorption edge blue-shifted from 490 nm to 440 nm at a Mg content of 3.8 at%, representing a widened optical band gap from 2.0 eV for pure VO2 to 2.4 eV at 3.8 at% doping. As a result, the colour of the Mg-doped films was modified to increase their brightness and lighten the yellow colour over that of the undoped-VO2 film. A first principle calculation was conducted to understand how dopants affect the optical, Mott phase transition and structural properties of VO2.

  20. Influence of oxygen flow rate on metal-insulator transition of vanadium oxide thin films grown by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Xu; Liu, Xinkun; Li, Haizhu; Huang, Mingju [Henan University, Key Lab of Informational Opto-Electronical Materials and Apparatus, School of Physics and Electronics, Kaifeng (China); Zhang, Angran [South China Normal University, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, Guangzhou (China)

    2017-03-15

    High-quality vanadium oxide (VO{sub 2}) films have been fabricated on Si (111) substrates by radio frequency (RF) magnetron sputtering deposition method. The sheet resistance of VO{sub 2} has a significant change (close to 5 orders of magnitude) in the process of the metal-insulator phase transition (MIT). The field emission-scanning electron microscope (FE-SEM) results show the grain size of VO{sub 2} thin films is larger with the increase of oxygen flow. The X-ray diffraction (XRD) results indicate the thin films fabricated at different oxygen flow rates grow along the (011) crystalline orientation. As the oxygen flow rate increases from 3 sccm to 6 sccm, the phase transition temperature of the films reduces from 341 to 320 K, the width of the thermal hysteresis loop decreases from 32 to 9 K. The thin films fabricated in the condition of 5 sccm have a high temperature coefficient of resistance (TCR) -3.455%/K with a small resistivity of 2.795 ρ/Ω cm. (orig.)

  1. Metal-insulator phase transition in a VO2 thin film observed with terahertz spectroscopy

    DEFF Research Database (Denmark)

    Jepsen, Peter Uhd; Fischer, Bernd M.; Thoman, Andreas

    2006-01-01

    We investigate the dielectric properties of a thin VO2 film in the terahertz frequency range in the vicinity of the semiconductor-metal phase transition. Phase-sensitive broadband spectroscopy in the frequency region below the phonon bands of VO2 gives insight into the conductive properties...... of the film during the phase transition. We compare our experimental data with models proposed for the evolution of the phase transition. The experimental data show that the phase transition occurs via the gradual growth of metallic domains in the film, and that the dielectric properties of the film...

  2. Anisotropic phase separation through the metal-insulator transition in amorphous Mo-Ge and Fe-Ge alloys

    International Nuclear Information System (INIS)

    Regan, M.J.

    1993-12-01

    Since an amorphous solid is often defined as that which lacks long-range order, the atomic structure is typically characterized in terms of the high-degree of short-range order. Most descriptions of vapor-deposited amorphous alloys focus on characterizing this order, while assuming that the material is chemically homogeneous beyond a few near neighbors. By coupling traditional small-angle x-ray scattering which probes spatial variations of the electron density with anomalous dispersion which creates a species-specific contrast, one can discern cracks and voids from chemical inhomogeneity. In particular, one finds that the chemical inhomogeneities which have been previously reported in amorphous Fe x Ge 1-x and Mo x Ge 1-x are quite anisotropic, depending significantly on the direction of film growth. With the addition of small amounts of metal atoms (x 2 or MoGe 3 . Finally, by manipulating the deposited power flux and rates of growth, Fe x Ge 1-x films which have the same Fe composition x can be grown to different states of phase separation. These results may help explain the difficulty workers have had in isolating the metal/insulator transition for these and other vapor-deposited amorphous alloys

  3. Metal-insulator transition in Pt-C nanowires grown by focused-ion-beam-induced deposition

    International Nuclear Information System (INIS)

    Fernandez-Pacheco, A.; Ibarra, M. R.; De Teresa, J. M.; Cordoba, R.

    2009-01-01

    We present a study of the transport properties of Pt-C nanowires created by focused-ion-beam (FIB)-induced deposition. By means of the measurement of the resistance while the deposit is being performed, we observe a progressive decrease in the nanowire resistivity with thickness, changing from 10 8 μΩ cm for thickness ∼20 nm to a lowest saturated value of 700 μΩ cm for thickness >150 nm. Spectroscopy analysis indicates that this dependence on thickness is caused by a gradient in the metal-carbon ratio as the deposit is grown. We have fabricated nanowires in different ranges of resistivity and studied their conduction mechanism as a function of temperature. A metal-insulator transition as a function of the nanowire thickness is observed. The results will be discussed in terms of the Mott-Anderson theory for noncrystalline materials. An exponential decrease in the conductance with the electric field is found for the most resistive samples, a phenomenon understood by the theory of hopping in lightly doped semiconductors under strong electric fields. This work explains the important discrepancies found in the literature for Pt-C nanostructures grown by FIB and opens the possibility to tune the transport properties of this material by an appropriate selection of the growth parameters.

  4. Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

    Science.gov (United States)

    Kaushik, Deepak Kumar; Kumar, K. Uday; Subrahmanyam, A.

    2017-01-01

    Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl˜1; kF is the Fermi wave vector and l is the electron mean free path) and degenerate semiconductors. The transport of charge carriers (electrons) in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known `metal-insulator transition' (MIT) which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC); this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann's expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

  5. A Review on Disorder-Driven Metal-Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials.

    Science.gov (United States)

    Wang, Jiang-Jing; Xu, Ya-Zhi; Mazzarello, Riccardo; Wuttig, Matthias; Zhang, Wei

    2017-07-27

    Metal-insulator transition (MIT) is one of the most essential topics in condensed matter physics and materials science. The accompanied drastic change in electrical resistance can be exploited in electronic devices, such as data storage and memory technology. It is generally accepted that the underlying mechanism of most MITs is an interplay of electron correlation effects (Mott type) and disorder effects (Anderson type), and to disentangle the two effects is difficult. Recent progress on the crystalline Ge₁Sb₂Te₄ (GST) compound provides compelling evidence for a disorder-driven MIT. In this work, we discuss the presence of strong disorder in GST, and elucidate its effects on electron localization and transport properties. We also show how the degree of disorder in GST can be reduced via thermal annealing, triggering a disorder-driven metal-insulator transition. The resistance switching by disorder tuning in crystalline GST may enable novel multilevel data storage devices.

  6. Topotactic Metal-Insulator Transition in Epitaxial SrFeO x Thin Films

    International Nuclear Information System (INIS)

    Khare, Amit; Shin, Dongwon; Yoo, Tae Sup; Kim, Minu; Kang, Tae Dong

    2017-01-01

    Multivalent transition metal oxides provide fascinating and rich physics related to oxygen stoichiometry. In particular, the adoptability of various valence states of transition metals enables perovskite oxides to display mixed (oxygen) ionic and electronic conduction and catalytic activity useful in many practical applications, including solid-oxide fuel cells (SOFCs), rechargeable batteries, gas sensors, and memristive devices. For proper realization of the ionic conduction and catalytic activity, it is essential to understand the reversible oxidation and reduction process, which is governed by oxygen storage/release steps in oxides. Topotactic phase transformation facilitates the redox process in perovskites with specific oxygen vacancy ordering by largely varying the oxygen concentration of a material without losing the lattice framework. The concentration and diffusion of oxide ions (O 2– ), the valence state of the transition metal cations, and the thermodynamic structural integrity together provide fundamental understanding and ways to explicitly control the redox reaction.[6] In addition, it offers an attractive route for tuning the emergent physical properties of transition metal oxides, via strong coupling between the crystal lattice and electronic structure.

  7. Sharpness and intensity modulation of the metal-insulator transition in ultrathin VO2 films by interfacial structure manipulation

    Science.gov (United States)

    McGee, Ryan; Goswami, Ankur; Pal, Soupitak; Schofield, Kalvin; Bukhari, Syed Asad Manzoor; Thundat, Thomas

    2018-03-01

    Vanadium dioxide (VO2) undergoes a structural transformation from monoclinic (insulator) to tetragonal (metallic) upon heating above 340 K, accompanied by abrupt changes to its electronic, optical, and mechanical properties. Not only is this transition scientifically intriguing, but there are also numerous applications in sensing, memory, and optoelectronics. Here we investigate the effect different substrates and the processing conditions have on the characteristics metal-insulator transition (MIT), and how the properties can be tuned for specific applications. VO2 thin films were grown on c -plane sapphire (0001) and p-type silicon by pulsed laser deposition. High-resolution x-ray diffraction along with transmission electron microscopy reveals textured epitaxial growth on sapphire by domain-matching epitaxy, while the presence of a native oxide layer on silicon prevented any preferential growth resulting in a polycrystalline film. An orientation relationship of (010)VO2|| (0001)Al 2O3 was established for VO2 grown on sapphire, while no such relationship was found for VO2 grown on silicon. Surface-energy minimization is the driving force behind grain growth, as the lowest energy VO2 plane grew on silicon, while on sapphire the desire for epitaxial growth was dominant. Polycrystallinity of films grown on silicon caused a weaker and less prominent MIT than observed on sapphire, whose MIT was higher in magnitude and steeper in slope. The position of the MIT was shown to depend on the competing effects of misfit strain and grain growth. Higher deposition temperatures caused an increase in the MIT, while compressive strain resulted in a decreased MIT.

  8. Absence of Mass Renormalization upon the Metal-Insulator Transition in La_1-xSr_xMnO_3

    Science.gov (United States)

    Okuda, T.; Asamitsu, A.; Tokura, Y.

    1998-03-01

    The low-temperature specific heat as well as the resistivity of La_1-xSr_xMnO3 crystals has been measured under magnetic fields to investigate the critical behavior of the metal-insulator (MI) transition, which is induced by carrier doping around a critical composition of x_c=0.17. We observed the reduction of specific heat by application of magnetic fields, which is due to the suppression of the contribution of spin wave. Thus, the magnetic contribution to the specific heat was carefully removed to extract the electronic contribution. The effective mass, derived from obtained electronic specific heat coefficient γ, is a few times as large as a bare mass in the ferromagnetic metallic state, e.g. γ = 3.5 (mJ/K^2 mole) at x=0.3, and does not critically increase around the critical point while showing the maximum value γ = 5.1 (mJ/K^2 mole) at x=0.18. This is in contrast with the conspicuous mass renormalization effect as observed for other transition metal oxide, eg. V_2O3 and LaTiO_3. The γ value rather decreases with the decrease of x from 0.18 to 0.15, namely in the immediate vicinity of the MI boundary. This suggests that the Fermi surface gradually shrinks towards the insulating phase and finally disappears at the MI phase boundary. This work was supported by New Energy and Industrial Technology Development Organization (NEDO) of Japan.

  9. Mechanisms of spin-flipping and metal-insulator transition in nano-Fe3O4

    Science.gov (United States)

    Dito Fauzi, Angga; Aziz Majidi, Muhammad; Rusydi, Andrivo

    2017-04-01

    Fe3O4 is a half-metallic ferrimagnet with {{T}\\text{C}}˜ 860 K exhibiting metal-insulator transition (MIT) at  ˜120 K. In bulk form, the saturation magnetization is 0.6 Tesla (˜471 emu cm-3). A recent experimental study has shown that the saturation magnetization of nano-Fe3O4 thin films can achieve up to  ˜760 emu cm-3, attributed to spin-flipping of Fe ions at tetrahedral sites assisted by oxygen vacancies (V O). Such a system has shown to have higher MIT temperature (˜150 K). The spin-flipping is a new phenomenon in Fe3O4, while the MIT is a long-standing one. Here, we propose a model and calculations to investigate the mechanisms of both phenomena. Our results show that, for the system without V O, the ferrimagnetic configuration is energetically favorable. Remakably, upon inclusion of V O, the ground-state configuration switches into ferromagnetic. As for the MIT, by proposing temperature dependences of some hopping integrals in the model, we demonstrate that the system without and with V O undergo the MIT in slightly different ways, leading to higher MIT temperature for the system with V O, in agreement with the experimental data. Our results also show that the MIT in both systems occur concomitantly with the redistribution of electrons among the three Fe ions in each Fe3O4 formula unit. As such temperature dependences of hopping integrals may arise due to dynamic Jahn-Teller effects, our phenomenological theory may provide a way to reconcile existing theories relating the MIT to the structural transition and the charge ordering.

  10. Conductance fluctuations and distribution at metal-insulator transition induced by electric field in disordered chain

    International Nuclear Information System (INIS)

    Senouci, Khaled

    2000-08-01

    A simple Kronig-Penney model for 1D mesoscopic systems with δ peak potentials is used to study numerically the influence of a constant electric field on the conductance fluctuations and distribution at the transition. We found that the conductance probability distribution has a system-size independent form with large fluctuations in good agreement with the previous works in 2D and 3D systems. (author)

  11. Topotactic Metal-Insulator Transition in Epitaxial SrFeOx Thin Films.

    Science.gov (United States)

    Khare, Amit; Shin, Dongwon; Yoo, Tae Sup; Kim, Minu; Kang, Tae Dong; Lee, Jaekwang; Roh, Seulki; Jung, In-Ho; Hwang, Jungseek; Kim, Sung Wng; Noh, Tae Won; Ohta, Hiromichi; Choi, Woo Seok

    2017-10-01

    Topotactic phase transformation enables structural transition without losing the crystalline symmetry of the parental phase and provides an effective platform for elucidating the redox reaction and oxygen diffusion within transition metal oxides. In addition, it enables tuning of the emergent physical properties of complex oxides, through strong interaction between the lattice and electronic degrees of freedom. In this communication, the electronic structure evolution of SrFeO x epitaxial thin films is identified in real-time, during the progress of reversible topotactic phase transformation. Using real-time optical spectroscopy, the phase transition between the two structurally distinct phases (i.e., brownmillerite and perovskite) is quantitatively monitored, and a pressure-temperature phase diagram of the topotactic transformation is constructed for the first time. The transformation at relatively low temperatures is attributed to a markedly small difference in Gibbs free energy compared to the known similar class of materials to date. This study highlights the phase stability and reversibility of SrFeO x thin films, which is highly relevant for energy and environmental applications exploiting the redox reactions. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Superconductor-Metal-Insulator transition in two dimensional Ta thin Films

    Science.gov (United States)

    Park, Sun-Gyu; Kim, Eunseong

    2013-03-01

    Superconductor-insulator transition has been induced by tuning film thickness or magnetic field. Recent electrical transport measurements of MoGe, Bi, Ta thin films revealed an interesting intermediate metallic phase which intervened superconducting and insulating phases at certain range of magnetic field. Especially, Ta thin films show the characteristic IV behavior at each phase and the disorder tuned intermediate metallic phase [Y. Li, C. L. Vicente, and J. Yoon, Physical Review B 81, 020505 (2010)]. This unexpected metallic phase can be interpreted as a consequence of vortex motion or contribution of fermionic quasiparticles. In this presentation, we report the scaling behavior during the transitions in Ta thin film as well as the transport measurements in various phases. Critical exponents v and z are obtained in samples with wide ranges of disorder. These results reveal new universality class appears when disorder exceeds a critical value. Dynamical exponent z of Superconducting sample is found to be 1, which is consistent with theoretical prediction of unity. z in a metallic sample is suddenly increased to be approximately 2.5. This critical exponent is much larger than the value found in other system and theoretical prediction. We gratefully acknowledge the financial support by the National Research Foundation of Korea through the Creative Research Initiatives.

  13. Ground state oxygen holes and the metal-insulator transition in rare earth nickelates

    Energy Technology Data Exchange (ETDEWEB)

    Schmitt, Thorsten; Bisogni, Valentina; Huang, Yaobo; Strocov, Vladimir [Research Department Synchrotron Radiation and Nanotechnology, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Catalano, Sara; Gibert, Marta; Scherwitzl, Raoul; Zubko, Pavlo; Triscone, Jean-Marc [Departement de Physique de la Matiere Condensee, University of Geneva (Switzerland); Green, Robert J.; Balandeh, Shadi; Sawatzky, George [Department of Physics and Astronomy, University of British Columbia, Vancouver (Canada)

    2015-07-01

    Perovskite rare-earth (Re) nickelates ReNiO{sub 3} continue to attract a lot of interest owing to their intriguing properties like a sharp metal to insulator transition (MIT), unusual magnetic order and expected superconductivity in specifically tuned super-lattices. Full understanding of these materials, however, is hampered by the difficulties in describing their electronic ground state (GS). From X-ray absorption (XAS) at the Ni 2p{sub 3/2} edge of thin films of NdNiO{sub 3} and corresponding RIXS maps vs. incident and transferred photon energies we reveal that the electronic GS configuration of NdNiO{sub 3} is composed of delocalized and localized components. Our study conveys that a Ni 3d{sup 8}-like configuration with holes at oxygen takes on the leading role in the GS and the MIT of ReNiO{sub 3} as proposed by recent model theories.

  14. Metal-Insulator Transition in Copper Oxides Induced by Apex Displacements

    Directory of Open Access Journals (Sweden)

    Swagata Acharya

    2018-05-01

    Full Text Available High temperature superconductivity has been found in many kinds of compounds built from planes of Cu and O, separated by spacer layers. Understanding why critical temperatures are so high has been the subject of numerous investigations and extensive controversy. To realize high temperature superconductivity, parent compounds are either hole doped, such as La_{2}CuO_{4} (LCO with Sr (LSCO, or electron doped, such as Nd_{2}CuO_{4} (NCO with Ce (NCCO. In the electron-doped cuprates, the antiferromagnetic phase is much more robust than the superconducting phase. However, it was recently found that the reduction of residual out-of-plane apical oxygen dramatically affects the phase diagram, driving those compounds to a superconducting phase. Here we use a recently developed first-principles method to explore how displacement of the apical oxygen (AO in LCO affects the optical gap, spin and charge susceptibilities, and superconducting order parameter. By combining quasiparticle self-consistent GW (QS GW and dynamical mean-field theory (DMFT, we show that LCO is a Mott insulator, but small displacements of the apical oxygen drive the compound to a metallic state through a localization-delocalization transition, with a concomitant maximum in d-wave order parameter at the transition. We address the question of whether NCO can be seen as the limit of LCO with large apical displacements, and we elucidate the deep physical reasons why the behavior of NCO is so different from the hole-doped materials. We shed new light on the recent correlation observed between T_{c} and the charge transfer gap, while also providing a guide towards the design of optimized high-T_{c} superconductors. Further, our results suggest that strong correlation, enough to induce a Mott gap, may not be a prerequisite for high-T_{c} superconductivity.

  15. Metal-insulator transition and magnetic properties of La - (Ba/Ca) - Mn - O compounds

    International Nuclear Information System (INIS)

    Anbarasu, V.; Manigandan, A.; Sathiyakumar, S.; Jayabalan, K.; Kaliyaperumal, L.K.

    2009-01-01

    The manganite compounds La 2 BaMn (3+x) P y (where x = 0, 0.5 and 1) and La 2 CaMn 3 O y have been prepared for the importance in the field of magneto resistance materials through solid-state reaction technique. From the Powder XRD patterns it was confirmed that both compounds were in single phase and the refined crystal system matches with superconducting perovskite structure and the lattice parameters were calculated as a = 3.892( 6) A, b = 3.899(3) A and c = 11.619(8) A for La 2 BaMn 3 O y ; a = 3.851(3) A, b = 3.891(9) A and c = 11.542(7) A for La 2 CaMn 3 O y . The low temperature resistivity measurement reveals that the compound La 2 BaMn 3 O y exhibiting M - I transition and the transition temperature was found to be 270 K. The study on magnetization nature of the La 2 BaMn 3+x Oy (where x = 0, 0.5 and I) compounds through vibrating sample magnetometer confirms the superparamagnetic nature at room temperature condition where as La 2 CaMn 3 O y exhibits paramagnetic nature. The structural relations between the prepared manganite systems La 2 BaMn 3 O y and La 2 CaMn 3 O y with superconducting perovskite compound LaBa 2 Cu 3 O 7-y was studied with the technological application of magneto resistive property of the prepared compounds. (author)

  16. Synchronization of pairwise-coupled, identical, relaxation oscillators based on metal-insulator phase transition devices: A model study

    Science.gov (United States)

    Parihar, Abhinav; Shukla, Nikhil; Datta, Suman; Raychowdhury, Arijit

    2015-02-01

    Computing with networks of synchronous oscillators has attracted wide-spread attention as novel materials and device topologies have enabled realization of compact, scalable and low-power coupled oscillatory systems. Of particular interest are compact and low-power relaxation oscillators that have been recently demonstrated using MIT (metal-insulator-transition) devices using properties of correlated oxides. Further the computational capability of pairwise coupled relaxation oscillators has also been shown to outperform traditional Boolean digital logic circuits. This paper presents an analysis of the dynamics and synchronization of a system of two such identical coupled relaxation oscillators implemented with MIT devices. We focus on two implementations of the oscillator: (a) a D-D configuration where complementary MIT devices (D) are connected in series to provide oscillations and (b) a D-R configuration where it is composed of a resistor (R) in series with a voltage-triggered state changing MIT device (D). The MIT device acts like a hysteresis resistor with different resistances in the two different states. The synchronization dynamics of such a system has been analyzed with purely charge based coupling using a resistive (RC) and a capacitive (CC) element in parallel. It is shown that in a D-D configuration symmetric, identical and capacitively coupled relaxation oscillator system synchronizes to an anti-phase locking state, whereas when coupled resistively the system locks in phase. Further, we demonstrate that for certain range of values of RC and CC, a bistable system is possible which can have potential applications in associative computing. In D-R configuration, we demonstrate the existence of rich dynamics including non-monotonic flows and complex phase relationship governed by the ratios of the coupling impedance. Finally, the developed theoretical formulations have been shown to explain experimentally measured waveforms of such pairwise coupled

  17. Field-induced stacking transition of biofunctionalized trilayer graphene

    Energy Technology Data Exchange (ETDEWEB)

    Masato Nakano, C. [Flintridge Preparatory School, La Canada, California 91011 (United States); Sajib, Md Symon Jahan; Samieegohar, Mohammadreza; Wei, Tao [Dan F. Smith Department of Chemical Engineering, Lamar University, Beaumont, Texas 77710 (United States)

    2016-02-01

    Trilayer graphene (TLG) is attracting a lot of attention as their stacking structures (i.e., rhombohedral vs. Bernal) drastically affect electronic and optical properties. Based on full-atom molecular dynamics simulations, we here predict electric field-induced rhombohedral-to-Bernal transition of TLG tethered with proteins. Furthermore, our simulations show that protein's electrophoretic mobility and diffusivity are enhanced on TLG surface. This phenomenon of controllable TLG stacking transition will contribute to various applications including biosensing.

  18. Dynamically Babinet-invertible metasurface: a capacitive-inductive reconfigurable filter for terahertz waves using vanadium-dioxide metal-insulator transition

    Science.gov (United States)

    Urade, Yoshiro; Nakata, Yosuke; Okimura, Kunio; Nakanishi, Toshihiro; Miyamaru, Fumiaki; Takeda, Mitsuo W.; Kitano, Masao

    2016-03-01

    This paper proposes a reconfigurable planar metamaterial that can be switched between capacitive and inductive responses using local changes in the electrical conductivity of its constituent material. The proposed device is based on Babinet's principle and exploits the singular electromagnetic responses of metallic checkerboard structures, which are dependent on the local electrical conductivity. Utilizing the heating-induced metal-insulator transition of vanadium dioxide ($\\mathrm{VO}_2$), the proposed metamaterial is designed to compensate for the effect of the substrate and is experimentally characterized in the terahertz regime. This reconfigurable metamaterial can be utilized as a switchable filter and as a switchable phase shifter for terahertz waves.

  19. Voltage control of metal-insulator transition and non-volatile ferroelastic switching of resistance in VOx/PMN-PT heterostructures.

    Science.gov (United States)

    Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X

    2014-08-04

    The central challenge in realizing electronics based on strongly correlated electronic states, or 'Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices.

  20. Oxygen pressure manipulations on the metal-insulator transition characteristics of highly (011)-oriented vanadium dioxide films grown by magnetron sputtering

    International Nuclear Information System (INIS)

    Yu Qian; Li Wenwu; Duan Zhihua; Hu Zhigao; Chu Junhao; Liang Jiran; Chen Hongda; Liu Jian

    2013-01-01

    The metal-insulator transition behaviour of vanadium dioxide (VO 2 ) films grown at different oxygen pressures is investigated. With the aid of temperature-dependent electrical and infrared transmittance experiments, it is found that the transition temperature in the heating process goes up with increasing argon-oxygen ratio, whereas the one in the cooling process shows an inverse variation trend. It is found that the hysteresis width of the phase transition is narrowed at a lower argon-oxygen ratio because the defects introduced by excess oxygen lower the energy requirement of transformation. Furthermore, the defects reduce the forbidden gap of the VO 2 system due to the generation of a V 5+ ion. The present results are valuable for the achievement of VO 2 -based optoelectronic devices.

  1. Field-induced valence transition in rare-earth system

    International Nuclear Information System (INIS)

    Chattopadhaya, A.; Ghatak, S.K.

    2000-01-01

    The magnetic field-induced valence transition in rare-earth compound has been examined based on a pseudospin S=1 Ising model proposed earlier for valence transition. The model includes finite mixing between two pertinent ionic configurations (magnetic and non-magnetic) separated by an energy gap and with intersite interaction between rare-earth ions. Using the mean field approximation the magnetic behaviour and the critical field (H c ) for transition are obtained as a function of energy gap and temperature. The phase boundary defined in terms of reduced field H c /H co and reduced temperature T/T v (T v being valence transition temperature in absence of field) is nearly independent of energy gap. These results are in qualitative agreement with experimental observation in Yb- and Eu-compounds

  2. Electron lone pair distortion facilitated metal-insulator transition in β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Wangoh, L.; Quackenbush, N. F. [Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York 13902 (United States); Marley, P. M.; Banerjee, S. [Department of Chemistry, University at Buffalo, The State University of New York, Buffalo, New York 14260 (United States); Sallis, S. [Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States); Fischer, D. A.; Woicik, J. C. [Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Piper, L. F. J., E-mail: lpiper@binghamton.edu [Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York 13902 (United States); Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States)

    2014-05-05

    The electronic structure of β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires has been studied with x-ray photoelectron spectroscopy techniques. The recent synthesis of defect-free β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires resulted in the discovery of an abrupt voltage-induced metal insulator transition. First principle calculations predicted an additional V-O-Pb hybridized “in-gap” state unique to this vanadium bronze playing a significant role in facilitating the transition. We confirm the existence, energetic position, and orbital character of the “in-gap” state. Moreover, we reveal that this state is a hybridized Pb 6s–O 2p antibonding lone pair state resulting from the asymmetric coordination of the Pb{sup 2+} ions.

  3. Field-induced transitions in DySb

    International Nuclear Information System (INIS)

    Brun, T.O.; Lander, G.H.; Korty, F.W.; Kouvel, J.S.

    1974-01-01

    The NaCl-structured compound DySb, which in zero field transforms abruptly at T/sub N/ approximately 9.5 0 K to a Type-II antiferromagnetic (A) state with a nearly tetragonal lattice distortion, was previously found to exhibit rapid field-induced changes in magnetization at 1.5 0 K. The field-induced transitions in a DySb crystal have been studied by neutron diffraction and magnetization measurements in fields up to approximately 60 kOe applied parallel to each of the principal axes. In the broken bracket 100 broken bracket case, the transition from the A to an intermediate ferrimagnetic (Q) state is first-order at 4.2 0 K (critical field H/sub c/ approximately 21 kOe) but is continuous from approximately 6 0 K up to T/sub N/: as H/sub c/ → 0. The Q-to-paramagnetic (P) transition is rapid but continuous at 4.2 0 K (H/sub c/ approximately 40 kOe) and becomes broad as T/sub N/ is approached. In the broken bracket 110 broken bracket case the A-to-Q transition remains essentially first-order from 4.2 0 K (H/sub c/ approximately 15 kOe) up to T/sub N/; above T/sub N/ rapid P-to-Q transitions occur at very high fields. The magnetic structure of the Q state is found to be that of HoP. (U.S.)

  4. Metal-insulator transition in SrTi{sub 1−x}V{sub x}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Man [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Wolf, Stuart A. [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States); Lu, Jiwei [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States)

    2013-11-25

    Epitaxial SrTi{sub 1−x}V{sub x}O{sub 3} (0 ≤ x ≤ 1) thin films were grown on (001)-oriented (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (LSAT) substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic corresponding to a Fermi liquid system. In the insulating phase (x < 0.67), the resistivity behavior was governed by Mott's variable range hopping mechanism. The possible mechanisms for the induced MIT are discussed, including the effects of electron correlation, lattice distortion, and Anderson localization.

  5. Metal-insulator transition in tin doped indium oxide (ITO thin films: Quantum correction to the electrical conductivity

    Directory of Open Access Journals (Sweden)

    Deepak Kumar Kaushik

    2017-01-01

    Full Text Available Tin doped indium oxide (ITO thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes in low temperatures (25-300 K. The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl∼1; kF is the Fermi wave vector and l is the electron mean free path and degenerate semiconductors. The transport of charge carriers (electrons in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known ‘metal-insulator transition’ (MIT which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC; this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann’s expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

  6. Hartree-Fock study of the Anderson metal-insulator transition in the presence of Coulomb interaction: Two types of mobility edges and their multifractal scaling exponents

    Science.gov (United States)

    Lee, Hyun-Jung; Kim, Ki-Seok

    2018-04-01

    We investigate the role of Coulomb interaction in the multifractality of Anderson metal-insulator transition, where the Coulomb interaction is treated within the Hartree-Fock approximation, but disorder effects are taken into account exactly. An innovative technical aspect in our simulation is to utilize the Ewald-sum technique, which allows us to introduce the long-range nature of the Coulomb interaction into Hartree-Fock self-consistent equations of order parameters more accurately. This numerical simulation reproduces the Altshuler-Aronov correction in a metallic state and the Efros-Shklovskii pseudogap in an insulating phase, where the density of states ρ (ω ) is evaluated in three dimensions. Approaching the quantum critical point of a metal-insulator transition from either the metallic or insulting phase, we find that the density of states is given by ρ (ω ) ˜|ω| 1 /2 , which determines one critical exponent of the McMillan-Shklovskii scaling theory. Our main result is to evaluate the eigenfunction multifractal scaling exponent αq, given by the Legendre transformation of the fractal dimension τq, which characterizes the scaling behavior of the inverse participation ratio with respect to the system size L . Our multifractal analysis leads us to identify two kinds of mobility edges, one of which occurs near the Fermi energy and the other of which appears at a high energy, where the density of states at the Fermi energy shows the Coulomb-gap feature. We observe that the multifractal exponent at the high-energy mobility edge remains to be almost identical to that of the Anderson localization transition in the absence of Coulomb interactions. On the other hand, we find that the multifractal exponent near the Fermi energy is more enhanced than that at the high-energy mobility edge, suspected to result from interaction effects. However, both the multifractal exponents do not change even if the strength of the Coulomb interaction varies. We also show that the

  7. Reflectance study on the metal-insulator transition driven by crystallinity change in poly(3,4-ethylenedioxy thiophene)/poly(styrenesulfonate) films

    International Nuclear Information System (INIS)

    Cho, Shinuk; Park, Sungheum; Lee, Kwanghee

    2005-01-01

    We report optical reflectance, R(ω), studies on free-standing films of poly(3,4-ethylene dioxy thiophene)/poly(style ne sulfonate) (PEDOT-PSS) measured over a range from 0.02 - 5.0 eV. When the PEDOT-PSS films were prepared at an elevated temperature of 60 .deg. C, the films exhibit an increased dc-conductivity (σ dc ∼ 104 S/cm) and an optical conductivity, σ(ω), in the intraband transitions below 1.0 eV as compared with the films prepared at room temperature (σ dc ∼ 47 S/cm). Detailed analysis of σ(ω) in terms of the 'localization-modified Drude (LMD) model' demonstrated that the heat-treated PEDOT-PSS was a disordered metal near the metal-insulator transition (MIT) while the as-grown films could be better described as a Fermi glass on the insulating side of MIT. The heat-annealing process increased the degree of crystallinity of the films, thereby inducing a MIT near the critical limit.

  8. Role of temperature-dependent O-p-Fe-d hybridization parameter in the metal-insulator transition of Fe3O4: a theoretical study

    Science.gov (United States)

    Fauzi, A. D.; Majidi, M. A.; Rusydi, A.

    2017-04-01

    We propose a simple tight-binding based model for Fe3O4 that captures the preference of ferrimagnetic over ferromagnetic spin configuration of the system. Our model is consistent with previous theoretical and experimental studies suggesting that the system is half metallic, in which spin polarized electrons hop only among the Fe B sites. To address the metal-insulator transition (MIT) we propose that the strong correlation among electrons, which may also be influenced by the electron-phonon interactions, manifest as the temperature-dependence of the O-p-Fe-d hybridization parameter, particularly Fe-d belonging to one of the Fe B sites (denoted as {t}{{FeB}-{{O}}}(2)). By proposing that this parameter increases as the temperature decreases, our density-of-states calculation successfully captures a gap opening at the Fermi level, transforming the system from half metal to insulator. Within this model along with the corresponding choice of parameters and a certain profile of the temperature dependence of {t}{{FeB}-{{O}}}(2), we calculate the resistivity of the system as a function of temperature. Our calculation result reveals the drastic uprising trend of the resistivity profile as the temperature decreases, with the MIT transition temperature located around 100 K, which is in agreement with experimental data.

  9. Probing charge transfer during metal-insulator transitions in graphene-LaAlO3/SrTiO3 systems

    Science.gov (United States)

    Aliaj, I.; Sambri, A.; Miseikis, V.; Stornaiuolo, D.; di Gennaro, E.; Coletti, C.; Pellegrini, V.; Miletto Granozio, F.; Roddaro, S.

    2018-06-01

    Two-dimensional electron systems (2DESs) at the interface between LaAlO3 (LAO) and SrTiO3 (STO) perovskite oxides display a wide class of tunable phenomena ranging from superconductivity to metal-insulator transitions. Most of these effects are strongly sensitive to surface physics and often involve charge transfer mechanisms, which are, however, hard to detect. In this work, we realize hybrid field-effect devices where graphene is used to modulate the transport properties of the LAO/STO 2DES. Different from a conventional gate, graphene is semimetallic and allows us to probe charge transfer with the oxide structure underneath the field-effect electrode. In LAO/STO samples with a low initial carrier density, graphene-covered regions turn insulating when the temperature is lowered to 3 K, but conduction can be restored in the oxide structure by increasing the temperature or by field effect. The evolution of graphene's electron density is found to be inconsistent with a depletion of LAO/STO, but it rather points to a localization of interfacial carriers in the oxide structure.

  10. Unexpected metal-insulator transition in thick Ca1-xSrxVO3 film on SrTiO3 (100) single crystal

    Science.gov (United States)

    Takayanagi, Makoto; Tsuchiya, Takashi; Namiki, Wataru; Ueda, Shigenori; Minohara, Makoto; Horiba, Koji; Kumigashira, Hiroshi; Terabe, Kazuya; Higuchi, Tohru

    2018-03-01

    Epitaxial Ca1-xSrxVO3 (0 ≦ x ≦ 1) thin films were grown on (100)-oriented SrTiO3 substrates by using the pulsed laser deposition technique. In contrast to the previous report that metal-insulator transition (MIT) in Ca1-xSrxVO3 (CSVO) was achieved only for extremely thin films (several nm thick), MIT was observed at 39, 72, and 113 K for films with a thickness of 50 nm. The electronic structure was investigated by hard and soft X-ray photoemission spectroscopy (HX-PES and SX-PES). The difference between these PES results was significant due to the variation in an escape depth of photoelectrons of PES. While HX-PES showed that the V 2p3/2 spectra consisted of four peaks (V5+, V4+, V3+, and V2+/1+), SX-PES showed only three peaks (V5+, V4+, and V3+). This difference can be caused by a strain from the substrate, which leads to the chemical disorder (V5+, V4+, V3+, and V2+/1+). The thin film near the substrate is affected by the strain. The positive magnetoresistance is attributed to the effect of electron-electron interactions in the disorder system. Therefore, the emergence of MIT can be explained by the electron-electron interactions from the chemical disorder due to the strain.

  11. Enhanced ferromagnetism, metal-insulator transition, and large magnetoresistance in La1-xCaxMn1-xRuxO3 free of eg-orbital double-exchange

    Science.gov (United States)

    Liu, M. F.; Du, Z. Z.; Liu, H. M.; Li, X.; Yan, Z. B.; Dong, S.; Liu, J.-M.

    2014-03-01

    The structure, ionic valences, magnetism, and magneto-transport behaviors of mixed valence oxides La1-xCaxMn1-xRuxO3 are systematically investigated. The simultaneous substitutions of La3+ and Mn3+ ions by Ca2+ and Ru4+, respectively, are confirmed by the structural and ionic valence characterizations, excluding the presence of Mn4+ and Ru3+ ions. The enhanced ferromagnetism, induced metal-insulator transition, and remarkable magnetoresistance effect are demonstrated when the substitution level x is lower than ˜0.6, in spite of the absence of the Mn3+-Ru4+ eg-orbital double-exchange. These anomalous magnetotransport effects are discussed based on the competing multifold interactions associated with the Mn3+-Ru4+ super-exchange and strong Ru4+-Ru4+ hopping, while the origins for the metal-insulator transition and magnetoresistance effect remain to be clarified.

  12. Charge driven metal-insulator transitions in LaMnO3|SrTiO3 (111) superlattices

    KAUST Repository

    Cossu, Fabrizio

    2017-08-01

    Interfaces of perovskite oxides, due to the strong interplay between the lattice, charge and spin degrees of freedom, can host various phase transitions, which is particularly interesting if these transitions can be tuned by external fields. Recently, ferromagnetism was found together with a seemingly insulating state in superlattices of manganites and titanates. We therefore study the (111) oriented $(\\\\text{LaMnO}_3)_{6-x}\\\\vert(\\\\text{SrTiO}_3)_{6+x}~(x = -0.5, 0, 0.5)$ superlattices by means of ab initio calculations, predicting a ferromagnetic ground state due to double exchange in all cases. We shed light on the ferromagnetic coupling in the LaMnO3 region and at the interfaces. The insulating states of specific superlattices can be understood on the basis of Jahn-Teller modes and electron/hole doping.

  13. Local structural distortion and electronic modifications in PrNiO3 across the metal-insulator transition

    International Nuclear Information System (INIS)

    Piamonteze, C.; Tolentino, H.C.N.; Ramos, A.Y.; Massa, N. E.; Alonso, J.A.; Martinez-Lope, M.J.; Casais, M.T.

    2003-01-01

    Local electronic and structural properties of PrNiO3 perovskite were studied by means of X-ray Absorption Spectroscopy at Ni K and L edges. The EXAFS results at Ni K edge show a structural transition from three different Ni-O bond-lengths at the insulating phase to two Ni-O bond-lengths above TMI. These results were interpreted as being due to a transition from a structure with two different Ni sites at the insulating phase to one distorted Ni site at the metallic phase. The Ni L edge spectra show a remarkable difference between the spectra measured at the insulating and metallic phases that indicates a decreasing degree of hybridization between Ni3d and O2p bands from the metallic to the insulating phase

  14. First- and second-order metal-insulator phase transitions and topological aspects of a Hubbard-Rashba system

    Science.gov (United States)

    Marcelino, Edgar

    2017-05-01

    This paper considers a model consisting of a kinetic term, Rashba spin-orbit coupling and short-range Coulomb interaction at zero temperature. The Coulomb interaction is decoupled by a mean-field approximation in the spin channel using field theory methods. The results feature a first-order phase transition for any finite value of the chemical potential and quantum criticality for vanishing chemical potential. The Hall conductivity is also computed using the Kubo formula in a mean-field effective Hamiltonian. In the limit of infinite mass the kinetic term vanishes and all the phase transitions are of second order; in this case the spontaneous symmetry-breaking mechanism adds a ferromagnetic metallic phase to the system and features a zero-temperature quantization of the Hall conductivity in the insulating one.

  15. The one-particle scenario for the metal-insulator transition in two-dimensional systems at T = 0

    CERN Document Server

    Tarasov, Y V

    2003-01-01

    The conductance of bounded disordered electron systems is calculated by reducing the original dynamic problem of arbitrary dimensionality to a set of strictly one-dimensional problems for one-particle mode propagators. The metallic ground state of a two-dimensional conductor, which is considered as a limiting case of three-dimensional quantum waveguide, is shown to result from its multi-modeness. As the waveguide thickness is reduced, e.g., by applying a 'pressing' potential, the electron system undergoes a set of continuous phase transitions related to discrete variations of the number of extended modes. The closing of the last current carrying mode is regarded as a phase transition of the electron system from metallic to dielectric state. The obtained results agree qualitatively with the observed 'anomalies' of resistivity of different two-dimensional electron and hole systems.

  16. Charge driven metal-insulator transitions in LaMnO3|SrTiO3 (111) superlattices

    KAUST Repository

    Cossu, Fabrizio; Tahini, Hassan Ali; Singh, Nirpendra; Schwingenschlö gl, Udo

    2017-01-01

    Interfaces of perovskite oxides, due to the strong interplay between the lattice, charge and spin degrees of freedom, can host various phase transitions, which is particularly interesting if these transitions can be tuned by external fields. Recently, ferromagnetism was found together with a seemingly insulating state in superlattices of manganites and titanates. We therefore study the (111) oriented $(\\text{LaMnO}_3)_{6-x}\\vert(\\text{SrTiO}_3)_{6+x}~(x = -0.5, 0, 0.5)$ superlattices by means of ab initio calculations, predicting a ferromagnetic ground state due to double exchange in all cases. We shed light on the ferromagnetic coupling in the LaMnO3 region and at the interfaces. The insulating states of specific superlattices can be understood on the basis of Jahn-Teller modes and electron/hole doping.

  17. Metal-insulator-semiconductor photodetectors.

    Science.gov (United States)

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  18. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  19. Numerical simulations of quantum many-body systems with applications to superfluid-insulator and metal-insulator transitions

    International Nuclear Information System (INIS)

    Niyaz, P.

    1993-01-01

    Quantum Monte Carlo techniques were used to study two quantum many-body systems, the one-dimensional extended boson-Hubbard Hamiltonian, a model of superfluid-insulator quantum phase transitions, and the two-dimensional Holstein Model, a model for electron-phonon interactions. For the extended boson-Hubbard model, the authors studied the ground state properties at commensurate filling (density = 1) and half-integer filling (density = 1/2). At commensurate filling, the system has two possible insulating phases for strong coupling. If the on-site repulsion dominates, the system freezes into an insulating phase where each site is singly occupied. If the intersite repulsion dominates, doubly occupied and empty sites alternate. At weak coupling, the system becomes a superfluid. The authors investigated the order of phase transitions between these different phases. At half-integer filling, the authors found one strong coupling insulating phase, where singly occupied and empty sites alternate, and a weak coupling superfluid phase. The authors also investigated the possibility of a supersolid phase and found no clear evidence of such a new phase. For the electron-phonon (Holstein) model, the authors focused on the finite temperature phase transition from a metallic state to an insulating charge density wave (CDW) state as the temperature is lowered. The authors present the first calculation of the spectral density from Monte Carlo data for this system. The authors also investigated the formation of a CDW state as a function of various parameters characterizing the electron-phonon interactions. Using these numerical results as benchmarks, the authors then investigated different levels of Migdal approximations. The authors found the solutions of a set of gapped Migdal-Eliashberg equations agreed qualitatively with the Monte Carlo results

  20. Thouless energy as a unifying concept for Josephson junctions tuned through the Mott metal-insulator transition

    Science.gov (United States)

    Tahvildar-Zadeh, A. N.; Freericks, J. K.; Nikolić, B. K.

    2006-05-01

    The Thouless energy was introduced in the 1970s as a semiclassical energy for electrons diffusing through a finite-sized conductor. It turns out to be an important quantum-mechanical energy scale for many systems ranging from disordered metals to quantum chaos to quantum chromodynamics. In particular, it has been quite successful in describing the properties of Josephson junctions when the barrier is a diffusive normal-state metal. The Thouless energy concept can be generalized to insulating barriers by extracting an energy scale from the two-probe Kubo conductance of a strongly correlated electron system (metallic or insulating) via a generalized definition of the quantum-mechanical level spacing to many-body systems. This energy scale is known to determine the crossover from tunneling to Ohmic (thermally activated) transport in normal tunnel junctions. Here we use it to illustrate how the quasiclassical picture of transport in Josephson junctions is modified as the strongly correlated barrier passes through the Mott transition. Surprisingly, we find the quasiclassical form holds well beyond its putative realm of validity.

  1. Field-induced phase transitions in antiferromagnetic systems

    International Nuclear Information System (INIS)

    Smeets, J.P.M.

    1984-05-01

    Neutron scattering experiments and magnetization measurements are carried out on cobalt bromide hexahydrate, of which 48% of the water molecules are replaced by deuterium oxide molecules. Results were compared with data obtained from non-deuterated cobalt bromide hexahydrate. Neutron scattering experiments showed the importance of the deuterium fraction. Interplay exists between the crystallographic system and the magnetic system, which is influenced by changing the deuterium fraction. Neutron scattering and magnetization experiments on partially deuterated RbFeCl 3 .2H 2 O and CsFeCl 3 .2H 2 O were performed to study the magnetic phase transitions in these quasi one-dimensional Ising compounds. The observed behaviour in the various phases can be described by the nucleation theory of chain reversals. (Auth.)

  2. Control of magnetic relaxation by electric-field-induced ferroelectric phase transition and inhomogeneous domain switching

    Energy Technology Data Exchange (ETDEWEB)

    Nan, Tianxiang; Emori, Satoru; Wang, Xinjun; Hu, Zhongqiang; Xie, Li; Gao, Yuan; Lin, Hwaider; Sun, Nian, E-mail: n.sun@neu.edu [Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States); Peng, Bin; Liu, Ming, E-mail: mingliu@mail.xjtu.edu.cn [Electronic Materials Research Laboratory, Xi' an Jiaotong University, Xi' an 710049 (China); Jiao, Jie; Luo, Haosu [Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800 (China); Budil, David [Department of Chemistry, Northeastern University, Boston, Massachusetts 02115 (United States); Jones, John G.; Howe, Brandon M.; Brown, Gail J. [Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States)

    2016-01-04

    Electric-field modulation of magnetism in strain-mediated multiferroic heterostructures is considered a promising scheme for enabling memory and magnetic microwave devices with ultralow power consumption. However, it is not well understood how electric-field-induced strain influences magnetic relaxation, an important physical process for device applications. Here, we investigate resonant magnetization dynamics in ferromagnet/ferroelectric multiferroic heterostructures, FeGaB/PMN-PT and NiFe/PMN-PT, in two distinct strain states provided by electric-field-induced ferroelectric phase transition. The strain not only modifies magnetic anisotropy but also magnetic relaxation. In FeGaB/PMN-PT, we observe a nearly two-fold change in intrinsic Gilbert damping by electric field, which is attributed to strain-induced tuning of spin-orbit coupling. By contrast, a small but measurable change in extrinsic linewidth broadening is attributed to inhomogeneous ferroelastic domain switching during the phase transition of the PMN-PT substrate.

  3. Magnetic-field induced phase transitions in intermetallic rare-earth ferrimagnets with a compensation point

    Czech Academy of Sciences Publication Activity Database

    Sabdenov, Ch.K.; Davydova, M.D.; Zvezdin, K.A.; Gorbunov, Denis; Tereshina, I. S.; Andreev, Alexander V.; Zvezdin, A. K.

    2017-01-01

    Roč. 43, č. 5 (2017), s. 551-558 ISSN 1063-777X R&D Projects: GA ČR GA16-03593S Institutional support: RVO:68378271 Keywords : rare-earth intermetallics * phase diagram * field-induced transition * magnetic anisotropy * high magnetic fields Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 0.804, year: 2016

  4. Tunable metal-insulator transition in Nd{sub 1−x}Y{sub x}NiO{sub 3} (x = 0.3, 0.4) perovskites thin film at near room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Shao, Tao; Qi, Zeming, E-mail: zmqi@ustc.edu.cn; Wang, Yuyin; Li, Yuanyuan; Yang, Mei; Zhang, Guobin [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029 (China); Wang, Yu [Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Science, Shanghai 201204 (China); Liu, Miao [Environmental Energy Technologies Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

    2015-07-13

    Metal-insulator transition (MIT) occurs due to the charge disproportionation and lattice distortions in rare-earth nickelates. Existing studies revealed that the MIT behavior of rare-earth nickelates is fairly sensitive to external stress/pressure, suggesting a viable route for MIT strain engineering. Unlike applying extrinsic strain, the MIT can also be modulated by through rare-earth cation mixing, which can be viewed as intrinsic quantum stress. We choose Nd{sub 1−X}Y{sub X}NiO{sub 3} (x = 0.3, 0.4) perovskites thin films as a prototype system to exhibit the tunable sharp MIT at near room temperature. By adjusting Y concentration, the transition temperature of the thin films can be changed within the range of 340–360 K. X-ray diffraction, X-ray absorption fine structure (XAFS), and in situ infrared spectroscopy are employed to probe the structural and optical property variation affected by composition and temperature. The infrared transmission intensity decreases with temperature across the MIT, indicating a pronounced thermochromic effect. Meanwhile, the XAFS result exhibits that the crystal atomistic structure changes accompanying with the Y atoms incorporation and MIT phase transition. The heavily doped Y atoms result in the pre-edge peak descent and Ni-O bond elongation, suggesting an enhanced charge disproportionation effect and the weakening of hybridization between Ni-3d and O-2p orbits.

  5. Magnetostrictive hypersound generation by spiral magnets in the vicinity of magnetic field induced phase transition

    Energy Technology Data Exchange (ETDEWEB)

    Bychkov, Igor V. [Chelyabinsk State University, 129 Br. Kashirinykh Str., Chelyabinsk 454001 (Russian Federation); South Ural State University (National Research University), 76 Lenin Prospekt, Chelyabinsk 454080 (Russian Federation); Kuzmin, Dmitry A., E-mail: kuzminda@csu.ru [Chelyabinsk State University, 129 Br. Kashirinykh Str., Chelyabinsk 454001 (Russian Federation); South Ural State University (National Research University), 76 Lenin Prospekt, Chelyabinsk 454080 (Russian Federation); Kamantsev, Alexander P.; Koledov, Victor V.; Shavrov, Vladimir G. [Kotelnikov Institute of Radio-engineering and Electronics of RAS, Mokhovaya Street 11-7, Moscow 125009 (Russian Federation)

    2016-11-01

    In present work we have investigated magnetostrictive ultrasound generation by spiral magnets in the vicinity of magnetic field induced phase transition from spiral to collinear state. We found that such magnets may generate transverse sound waves with the wavelength equal to the spiral period. We have examined two types of spiral magnetic structures: with inhomogeneous exchange and Dzyaloshinskii–Moriya interactions. Frequency of the waves from exchange-caused spiral magnetic structure may reach some THz, while in case of Dzyaloshinskii–Moriya interaction-caused spiral it may reach some GHz. These waves will be emitted like a sound pulses. Amplitude of the waves is strictly depends on the phase transition speed. Some aspects of microwaves to hypersound transformation by spiral magnets in the vicinity of phase transition have been investigated as well. Results of the work may be interesting for investigation of phase transition kinetics as well, as for various hypersound applications. - Highlights: • Magnetostrictive ultrasound generation by spiral magnets at phase transition (PT) is studied. • Spiral magnets during PT may generate transverse sound with wavelength equal to spiral period. • Amplitude of the sound is strictly depends on the phase transition speed. • Microwave-to-sound transformation in the vicinity of PT is investigated as well.

  6. Field induced magnetic phase transition as a magnon Bose Einstein condensation

    Directory of Open Access Journals (Sweden)

    Teodora Radu et al

    2007-01-01

    Full Text Available We report specific heat, magnetocaloric effect and magnetization measurements on single crystals of the frustrated quasi-2D spin -½ antiferromagnet Cs2CuCl4 in the external magnetic field 0≤B≤12 T along a-axis and in the temperature range 0.03 K≤T≤6 K. Decreasing the applied magnetic field B from high fields leads to the closure of the field induced gap in the magnon spectrum at a critical field Bcsimeq8.44 T and a long-range incommensurate state below Bc. In the vicinity of Bc, the phase transition boundary is well described by the power law TN~(Bc-B1/phi with the measured critical exponent phisimeq1.5. These findings provide experimental evidence that the scaling law of the transition temperature TN can be described by the universality class of 3D Bose–Einstein condensation (BEC of magnons.

  7. Reentrant metal-insulator transition in the Cu-doped manganites La1-x Pbx MnO3 (x˜0.14) single crystals

    Science.gov (United States)

    Zhao, B. C.; Song, W. H.; Ma, Y. Q.; Ang, R.; Zhang, S. B.; Sun, Y. P.

    2005-10-01

    Single crystals of La1-x Pbx Mn1-y-z Cuy O3 ( x˜0.14 ; y=0 ,0.01,0.02,0.04,0.06; z=0.02 ,0.08,0.11,0.17,0.20) are grown by the flux growth technique. The effect of Cu doping at the Mn-site on magnetic and transport properties is studied. All studied samples undergo a paramagnetic-ferromagnetic transition. The Curie temperature TC decreases and the transition becomes broader with increasing Cu-doping level. The high-temperature insulator-metal (I-M) transition moves to lower temperature with increasing Cu-doping level. A reentrant M-I transition at the low temperature T* is observed for samples with y⩾0.02 . In addition, T* increases with increasing Cu-doping level and is not affected by applied magnetic fields. Accompanying the appearance of T* , there exists a large, almost constant magnetoresistance (MR) below T* except for a large MR peak near TC . This reentrant M-I transition is ascribed to charge carrier localization due to lattice distortion caused by the Cu doping at Mn sites.

  8. Metal-insulator transition and superconductivity induced by Rh doping in the binary pnictides RuPn (Pn=P, As, Sb)

    Science.gov (United States)

    Hirai, Daigorou; Takayama, Tomohiro; Hashizume, Daisuke; Takagi, Hidenori

    2012-04-01

    Binary ruthenium pnictides, RuP and RuAs, with an orthorhombic MnP structure, were found to show a metal to a nonmagnetic insulator transition at TMI = 270 and 200 K, respectively. In the metallic region above TMI, a structural phase transition, accompanied with a weak anomaly in the resistivity and the magnetic susceptibility, indicative of a pseudogap formation, was identified at Ts = 330 and 280 K, respectively. These two transitions were suppressed by substituting Ru with Rh. We found superconductivity with a maximum Tc = 3.7 and 1.8 K in a narrow composition range around the critical point for the pseudogap phase, Rh content xc = 0.45 and 0.25 for Ru1-xRhxP and Ru1-xRhxAs, respectively, which may provide us with a nonmagnetic route to superconductivity at a quantum critical point.

  9. A Brillouin scattering study of La0.77Ca0.23MnO3 across the metal-insulator transition

    International Nuclear Information System (INIS)

    Seikh, Md Motin; Narayana, Chandrabhas; Sudheendra, L; Sood, A K; Rao, C N R

    2004-01-01

    Temperature-dependent Brillouin scattering studies have been carried out on La 0.77 Ca 0.23 MnO 3 across the paramagnetic insulator-ferromagnetic metal (I-M) transition (T C ∼ 230 K). The spectra show modes corresponding to a surface Rayleigh wave (SRW) and a high velocity pseudo-surface wave (HVPSAW) along with bulk acoustic waves (B1 and B2). The Brillouin shifts associated with the SRW and HVPSAW increase, whereas the B1 and B2 frequencies decrease, below T C . The temperature dependence of the SRW and HVPSAW modes is related to the increase in the elastic constant C 11 across the I-M transition. The decrease in frequency across the I-M transition of the bulk modes is understood to be due to enhanced self-energy corrections as a result of increased magnon-phonon interaction across the I-M transition. Correspondingly, these modes show a large increase in the full width at half maximum (FWHM) as the temperature decreases. We also observe a central peak whose width is maximum at T C

  10. Double hydrogen bonded ferroelectric liquid crystals: A study of field induced transition (FiT)

    Science.gov (United States)

    Vijayakumar, V. N.; Madhu Mohan, M. L. N.

    2009-12-01

    A novel series of chiral hydrogen bonded liquid crystals have been isolated. Hydrogen bond was formed between chiral nonmesogen ingredient levo tartaric acid and mesogenic p-n-alkoxybenzoic acids. Phase diagram was constructed from the transition temperatures obtained by DSC and polarizing optical microscopic (POM) studies. Thermal and electrical properties exhibited by three complexes namely LTA+8BA, LTA+7BA and LTA+5BA were discussed. Salient feature of the present work was the observation of a reentrant smectic ordering in LTA+8BA complex designated as C r∗ phase. This reentrant phenomenon was confirmed by DSC thermograms, optical textures of POM and temperature variation of capacitance and dielectric loss studies. Tilt angle was measured in smectic C ∗ and reentrant smectic C r∗ phases. Another interesting feature of the present investigation was the observation of a field induced transition (FiT) in the LTA+ nBA homologous series. Three threshold field values were noticed which give rise to two new phases (E 1 and E 2) induced by electric field and on further enhancement of the applied field the mesogen behaves like an optical shutter. FiT is reversible in the sense that when applied field is removed the original texture was restored.

  11. Electronic structure of UN based on specific heat and field-induced transitions up to 65 T

    Czech Academy of Sciences Publication Activity Database

    Troć, R.; Samsel-Czekała, M.; Pikul, A.; Andreev, Alexander V.; Gorbunov, Denis; Skourski, Y.; Sznajd, J.

    2016-01-01

    Roč. 94, č. 22 (2016), 1-14, č. článku 224415. ISSN 2469-9950 R&D Projects: GA ČR GA16-03593S Institutional support: RVO:68378271 Keywords : uranium mononitride * antiferromagnetism * field-induced transition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.836, year: 2016

  12. Spontaneous and field-induced phase transitions in TbFe.sub.5./sub.Al.sub.7./sub..

    Czech Academy of Sciences Publication Activity Database

    Gorbunov, Denis; Yasin, S.; Andreev, Alexander V.; Mushnikov, N. V.; Skourski, Y.; Zherlitsyn, S.; Wosnitza, J.

    2014-01-01

    Roč. 535, Sep (2014), 56-63 ISSN 0304-8853 R&D Projects: GA ČR GAP204/12/0150 Grant - others:AVČR(CZ) M100101203 Institutional support: RVO:68378271 Keywords : rare-earth intermetallics * ferrimagnetism * magnetic anisotropy * spin-reorientation transition * high magnetic fields * field-induced transition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.970, year: 2014

  13. Electric-field-induced modification of the magnon energy, exchange interaction, and curie temperature of transition-metal thin films.

    Science.gov (United States)

    Oba, M; Nakamura, K; Akiyama, T; Ito, T; Weinert, M; Freeman, A J

    2015-03-13

    The electric-field-induced modification in the Curie temperature of prototypical transition-metal thin films with the perpendicular magnetic easy axis, a freestanding Fe(001) monolayer and a Co monolayer on Pt(111), is investigated by first-principles calculations of spin-spiral structures in an external electric field (E field). An applied E field is found to modify the magnon (spin-spiral formation) energy; the change arises from the E-field-induced screening charge density in the spin-spiral states due to p-d hybridizations. The Heisenberg exchange parameters obtained from the magnon energy suggest an E-field-induced modification of the Curie temperature, which is demonstrated via Monte Carlo simulations that take the magnetocrystalline anisotropy into account.

  14. Metallic insulation transport and strainer clogging tests

    International Nuclear Information System (INIS)

    Hyvaerinen, J.; Hongisto, O.

    1994-06-01

    Experiments to probe the transport and clogging properties of metallic (metal reflective) insulation have been carried out in order to provide data for evaluation of their influence on the emergency core cooling and containment spray systems of the Finnish boiling water reactors in the event of a design basis accident. The specific metallic insulation tested was DARMET, provided by Darchem Engineering Ltd. The inner foils of Darmet are dimped. Available literature on the metallic insulation performance under design basis accident conditions has been reviewed. On the basis of the review a parametric approach has been chosen for the transport and clogging experiments. This approach involves testing a wide size range of various shapes of foil pieces. Five sets of experiments have been carried out. The first three sets investigate transport properties of the foil pieces, starting from sedimentation in stagnant waste pool and proceeding to transport in horizontal and vertically circulating flows. The clogging experiments have been addressed the differential pressures obtained due to accumulation of both pure and metallic and a mixture of metallic and fibrous (mineral wool) depris. (4 refs., 24 figs., 2 tabs.)

  15. A Seismic Analysis for Reflective Metal Insulation

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Kyuhyung; Kim, Taesoon [KHNP CRI, Daejeon (Korea, Republic of)

    2016-10-15

    U.S. NRC (Nuclear Regulatory Commission) GSI- 191 (Generic Safety Issue-191) is concerned about the head-loss of emergency core cooling pumps caused by calcium silicate insulation debris accumulated on a sump screen when a loss of coolant accident (LOCA). In order to cope with the concern, many nuclear plants in U. S. have been replacing calcium silicate insulation in containment building with reflective metal insulation (RMI). In Korea, RMI has been used for only reactor vessels recently constructed, but the RMI was imported. Therefore, we have been developing the domestic design of RMI to supply to nuclear power plants under operation and construction in relation to the GSI-191. This paper covers that the structural integrity of the RMI assembly was evaluated under SSE (safety shutdown earthquake) load. An analysis model was built for the seismic test system of a reflective metal insulation assembly and pre-stress, modal, and spectrum analysis for the model were performed using a commercial structural analysis code, ANSYS. According to the results of the analyses, the buckles fastening the RMIs showed the structural integrity under the required response spectrum containing the safety shutdown earthquake loads applied to main components in containment building. Consequently, since the RMI isn't disassembled under the SSE load, the RMI is judged not to affect safety related components.

  16. A Seismic Analysis for Reflective Metal Insulation

    International Nuclear Information System (INIS)

    Kim, Kyuhyung; Kim, Taesoon

    2016-01-01

    U.S. NRC (Nuclear Regulatory Commission) GSI- 191 (Generic Safety Issue-191) is concerned about the head-loss of emergency core cooling pumps caused by calcium silicate insulation debris accumulated on a sump screen when a loss of coolant accident (LOCA). In order to cope with the concern, many nuclear plants in U. S. have been replacing calcium silicate insulation in containment building with reflective metal insulation (RMI). In Korea, RMI has been used for only reactor vessels recently constructed, but the RMI was imported. Therefore, we have been developing the domestic design of RMI to supply to nuclear power plants under operation and construction in relation to the GSI-191. This paper covers that the structural integrity of the RMI assembly was evaluated under SSE (safety shutdown earthquake) load. An analysis model was built for the seismic test system of a reflective metal insulation assembly and pre-stress, modal, and spectrum analysis for the model were performed using a commercial structural analysis code, ANSYS. According to the results of the analyses, the buckles fastening the RMIs showed the structural integrity under the required response spectrum containing the safety shutdown earthquake loads applied to main components in containment building. Consequently, since the RMI isn't disassembled under the SSE load, the RMI is judged not to affect safety related components

  17. Ultrashort hybrid metal-insulator plasmonic directional coupler.

    Science.gov (United States)

    Noghani, Mahmoud Talafi; Samiei, Mohammad Hashem Vadjed

    2013-11-01

    An ultrashort plasmonic directional coupler based on the hybrid metal-insulator slab waveguide is proposed and analyzed at the telecommunication wavelength of 1550 nm. It is first analyzed using the supermode theory based on mode analysis via the transfer matrix method in the interaction region. Then the 2D model of the coupler, including transition arms, is analyzed using a commercial finite-element method simulator. The hybrid slab waveguide is composed of a metallic layer of silver and two dielectric layers of silica (SiO2) and silicon (Si). The coupler is optimized to have a minimum coupling length and to transfer maximum power considering the layer thicknesses as optimization variables. The resulting coupling length in the submicrometer region along with a noticeable power transfer efficiency are advantages of the proposed coupler compared to previously reported plasmonic couplers.

  18. Gigantic magnetoelectric effect caused by magnetic-field-induced canted antiferromagnetic-paramagnetic transition in quasi-two-dimensional Ca2CoSi2O7 crystal

    Science.gov (United States)

    Akaki, M.; Tozawa, J.; Akahoshi, D.; Kuwahara, H.

    2009-05-01

    We have investigated the magnetic and dielectric properties of Ca2CoSi2O7 crystal. The dielectricity and magnetism of Ca2CoSi2O7 are strongly coupled below a canted antiferromagnetic transition temperature (TN). Magnetic fields induce electric polarization below TN. Interestingly, the magnetic-field-induced electric polarization is detected even without poling electric fields. Below TN, a canted antiferromagnetic-paramagnetic transition is induced by magnetic fields. The large magnetocapacitance is observed around TN. The origin of the large magnetocapacitance is due to the magnetic-field-induced the canted antiferromagnetic-paramagnetic transition.

  19. Propagation Characteristics of Multilayer Hybrid Insulator-Metal-Insulator and Metal-Insulator-Metal Plasmonic Waveguides

    Directory of Open Access Journals (Sweden)

    M. Talafi Noghani

    2014-02-01

    Full Text Available Propagation characteristics of symmetrical and asymmetrical multilayer hybrid insulator-metal-insulator (HIMI and metal-insulator-metal (HMIM plasmonic slab waveguides are investigated using the transfer matrix method. Propagation length (Lp and spatial length (Ls are used as two figures of merit to qualitate the plasmonic waveguides. Symmetrical structures are shown to be more performant (having higher Lp and lower Ls, nevertheless it is shown that usage of asymmetrical geometry could compensate for the performance degradation in practically realized HIMI waveguides with different substrate materials. It is found that HMIM slab waveguide could support almost long-range subdiffraction plasmonic modes at dimensions lower than the spatial length of the HIMI slab waveguide.

  20. Field induced phase transition in layered honeycomb spin system α-RuCl3 studied by thermal conductivity

    Science.gov (United States)

    Leahy, Ian; Bornstein, Alex; Choi, Kwang-Yong; Lee, Minhyea

    α -RuCl3, a quasi -two-dimensional honeycomb lattice is known to be a candidate material to realize the Heisenberg-Kitaev spin model of a highly anisotropic bond-dependent exchange interaction. We investigate in-plane thermal conductivity (κ) as a function of temperature (T) and in-plane applied field (H). At H = 0 , the onset of a strong increase in κ marks the spontaneous long range ordering temperature, Tc = 6 . 5 K , corresponding to ``zigzag'' antiferromagnetic ordering. A broad peak appearing below Tc in κ was found to be suppressed significantly as H increases up to ~ 7 T , implying the system undergoes a field-induced transition from ordered to a new spin-disordered state analogous to the transverse-field Ising model. Further increasing H above 7 . 1 T , the large field seems to begin polarizing spins thus increasing the phonon mean free path, resulting in a significant rise in κ. This tendency is clearly shown in the field dependence of κ below Tc, which has a pronounced minimum at Hmin = 7 . 1 T . We will discuss our scaling analysis to characterize this field-induced phase transition and compare to the transverse-field Ising spin system. Work at the University of Colorado was supported by the US DOE Basic Energy Sciences under Award No. DE-SC0006888.

  1. Temperature- and field-induced structural transitions in magnetic colloidal clusters

    Science.gov (United States)

    Hernández-Rojas, J.; Calvo, F.

    2018-02-01

    Magnetic colloidal clusters can form chain, ring, and more compact structures depending on their size. In the present investigation we examine the combined effects of temperature and external magnetic field on these configurations by means of extensive Monte Carlo simulations and a dedicated analysis based on inherent structures. Various thermodynamical, geometric, and magnetic properties are calculated and altogether provide evidence for possibly multiple structural transitions at low external magnetic field. Temperature effects are found to overcome the ordering effect of the external field, the melted stated being associated with low magnetization and a greater compactness. Tentative phase diagrams are proposed for selected sizes.

  2. Nanostructured Anodic Multilayer Dielectric Stacked Metal-Insulator-Metal Capacitors.

    Science.gov (United States)

    Karthik, R; Kannadassan, D; Baghini, Maryam Shojaei; Mallick, P S

    2015-12-01

    This paper presents the fabrication of Al2O3/TiO2/Al2O3 metal-insulator-metal (MIM) capacitor using anodization technique. High capacitance density of > 3.5 fF/μm2, low quadratic voltage coefficient of capacitance of dielectric stack required for high performance MIM capacitor.

  3. Plasma damage in floating metal-insulator-metal capacitors

    NARCIS (Netherlands)

    Ackaert, Jan; Wang, Zhichun; De Backer, E.; Coppens, P.

    2002-01-01

    In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMCs), is reported. CID does not necessarily lead to direct yield loss, but may also induce latent damage leading to reliability losses. The damage is caused by the build up of a voltage potential difference between

  4. Charging damage in floating metal-insulator-metal capacitors

    NARCIS (Netherlands)

    Ackaert, Jan; Wang, Zhichun; De Backer, E.; Coppens, P.

    2002-01-01

    In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMC) is reported. The damage is caused by the build up of a voltage potential difference between the two plates of the capacitor. A simple logarithmic relation is discovered between the damage by this voltage

  5. Plasma Damage in Floating Metal-Insulator-Metal Capacitors

    NARCIS (Netherlands)

    Ackaert, Jan; Wang, Zhichun; Backer, E.; Coppens, P.

    2001-01-01

    In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMCs), is reported. CID does not necessarily lead to direct yield loss, but may also induce latent damage leading to reliability losses. The damage is caused by the build up of a voltage potential difference between

  6. Metal-insulator transition upon heating and negative-differential-resistive-switching induced by self-heating in BaCo0.9Ni0.1S1.8

    International Nuclear Information System (INIS)

    Fisher, B.; Genossar, J.; Chashka, K. B.; Patlagan, L.; Reisner, G. M.

    2014-01-01

    The layered compound BaCo 1−x Ni x S 2−y (0.05  1−x Ni x S 2−y (nominal x = 0.1 and y = 0.2). These were due to the steep metal to insulator transition upon heating followed by the activated behavior of the resistivity above the transition. The major role of Joule heating in switching is supported by the absence of nonlinearity in the current as function of voltage, I(V), obtained in pulsed measurements, in the range of electric fields relevant to d.c. measurements. The voltage-controlled negative differential resistance around the threshold for switching was explained by a simple model of self-heating. The main difficulty in modeling I(V) from the samples resistance as function of temperature R(T) was the progressive increase of R(T), and to a lesser extend the decrease of the resistance jumps at the transitions, caused by the damage induced by cycling through the transitions by heating or self-heating. This was dealt with by following systematically R(T) over many cycles and by using the data of R(T) in the heating cycle closest to that of the self-heating one

  7. Metal-insulator transition upon heating and negative-differential-resistive-switching induced by self-heating in BaCo{sub 0.9}Ni{sub 0.1}S{sub 1.8}

    Energy Technology Data Exchange (ETDEWEB)

    Fisher, B.; Genossar, J.; Chashka, K. B.; Patlagan, L.; Reisner, G. M. [Physics Department, Technion-Israel Institute of Technology, Haifa 32000 (Israel)

    2014-04-14

    The layered compound BaCo{sub 1−x}Ni{sub x}S{sub 2−y} (0.05 < x < 0.2 and 0.05 < y < 0.2) exhibits an unusual first-order structural and electronic phase transition from a low-T monoclinic paramagnetic metal to a high-T tetragonal antiferromagnetic insulator around 200 K with huge hysteresis (∼40 K) and large volume change (∼0.01). Here, we report on unusual voltage-controlled resistive switching followed by current-controlled resistive switching induced by self-heating in polycrystalline BaCo{sub 1−x}Ni{sub x}S{sub 2−y} (nominal x = 0.1 and y = 0.2). These were due to the steep metal to insulator transition upon heating followed by the activated behavior of the resistivity above the transition. The major role of Joule heating in switching is supported by the absence of nonlinearity in the current as function of voltage, I(V), obtained in pulsed measurements, in the range of electric fields relevant to d.c. measurements. The voltage-controlled negative differential resistance around the threshold for switching was explained by a simple model of self-heating. The main difficulty in modeling I(V) from the samples resistance as function of temperature R(T) was the progressive increase of R(T), and to a lesser extend the decrease of the resistance jumps at the transitions, caused by the damage induced by cycling through the transitions by heating or self-heating. This was dealt with by following systematically R(T) over many cycles and by using the data of R(T) in the heating cycle closest to that of the self-heating one.

  8. Dynamic Test Method Based on Strong Electromagnetic Pulse for Electromagnetic Shielding Materials with Field-Induced Insulator-Conductor Phase Transition

    Science.gov (United States)

    Wang, Yun; Zhao, Min; Wang, Qingguo

    2018-01-01

    In order to measure the pulse shielding performance of materials with the characteristic of field-induced insulator-conductor phase transition when materials are used for electromagnetic shielding, a dynamic test method was proposed based on a coaxial fixture. Experiment system was built by square pulse source, coaxial cable, coaxial fixture, attenuator, and oscilloscope and insulating components. S11 parameter of the test system was obtained, which suggested that the working frequency ranges from 300 KHz to 7.36 GHz. Insulating performance is good enough to avoid discharge between conductors when material samples is exposed in the strong electromagnetic pulse field up to 831 kV/m. This method is suitable for materials with annular shape, certain thickness and the characteristic of field-induced insulator-conductor phase transition to get their shielding performances of strong electromagnetic pulse.

  9. Gate-controlled metal-insulator transition in the LaAlO{sub 3}/SrTiO{sub 3} system with sub-critical LaAlO{sub 3} thickness

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Joon Sung; Lee, Seung Ran; Chang, Jung-Won; Noh, Hyunho; Baasandorj, Lkhagvasuren; Shim, Seung-Bo; Kim, Jinhee [Korea Research Institute of Standards and Science, Daejeon 305-600 (Korea, Republic of); Seung, Sang Keun; Shin, Hyun Sup; Song, Jonghyun [Department of Physics, Chungnam National University, Daejeon 305-764 (Korea, Republic of)

    2012-12-15

    We studied the electrical conduction in the LaAlO{sub 3}/SrTiO{sub 3} (LAO/STO) interface electron system with a sub-critical LAO layer thickness of {proportional_to}3.5 unit cells (uc). It was found that the true dividing point between metallic and insulating behaviour without gating lies near the LAO thickness of 3.5 uc. Our marginally metallic 3.5 uc sample showed a sharp transition to insulating state at temperatures which strongly depended on the applied negative back-gate voltage. The superior gate-controllability of the sample was attributed to its sheet carrier density which was an order of magnitude lower than those of conducting LAO/STO samples with 4 uc or more of LAO layers. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Field-induced resistance switching at metal/perovskite manganese oxide interface

    International Nuclear Information System (INIS)

    Ohkubo, I.; Tsubouchi, K.; Harada, T.; Kumigashira, H.; Itaka, K.; Matsumoto, Y.; Ohnishi, T.; Lippmaa, M.; Koinuma, H.; Oshima, M.

    2008-01-01

    Planar type metal/insulator/metal structures composed of an epitaxial perovskite manganese oxide layer and various metal electrodes were prepared for electric-field-induced resistance switching. Only the electrode pairs including Al show good resistance switching and the switching ratio reaches its maximum of 1000. This resistance switching occurs around the interface between Al electrodes and epitaxial perovskite manganese oxide thin films

  11. Nanosize effects on the magnetic field induced transitions in La0.67−xEuxCa0.33MnO3 perovskite manganite

    International Nuclear Information System (INIS)

    Raju, N.; Roja Sree, D.; Reddy, S. Shravan Kumar; Reddy, Ch. Gopal; Reddy, P. Yadagiri; Reddy, K. Rama; Reddy, V. Raghavendra; Reddy Turpu, Goverdhan

    2014-01-01

    The nanosize effects on magnetic field induced transitions in La 0.67−x Eu x Ca 0.33 MnO 3 (x=0.25 and 0.27) system are presented in this paper. The reduction in the particle size of the system shows drastic effects on the electrical transport properties leading to robustness of the charge ordering phenomenon. The metal–insulator transition found in bulk materials at low magnetic fields disappeared in nanoparticles of the same material and a high field induced metal–insulator transition emerged at lower temperatures. These results manifest a strong correlation between the chemical pressures induced by doping of various ions at A-site and nanosize related phenomenon. - Highlights: • Chemical pressure and nanosize effects on electrical transport studies of Eu doped LCMO system are reported. • Decrease in particle size resulted in drastic changes on electrical transport studies. • Metal–insulator transition found in bulk at low magnetic fields disappeared in nanoparticles

  12. A Difference in Using Atomic Layer Deposition or Physical Vapour Deposition TiN as Electrode Material in Metal-Insulator-Metal and Metal-Insulator-Silicon Capacitors

    NARCIS (Netherlands)

    Groenland, A.W.; Wolters, Robertus A.M.; Kovalgin, Alexeij Y.; Schmitz, Jurriaan

    2011-01-01

    In this work, metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) capacitors are studied using titanium nitride (TiN) as the electrode material. The effect of structural defects on the electrical properties on MIS and MIM capacitors is studied for various electrode configurations. In the

  13. Abnormal magnetization and field-induced transition in (La0.73Bi0.27)0.67Ca0.33MnO3

    International Nuclear Information System (INIS)

    Li Haina; Wu Yuying; Yu Hongwei; Chen Ziyu; Huang Yan; Wang Shaoliang; Li Liang; Xia Zhengcai

    2010-01-01

    The magnetic field dependence of magnetization of Bi doped manganites (La 1-x Bi x ) 0.67 Ca 0.33 MnO 3 (x=0.27) was investigated at different temperatures with a pulsed high magnetic field. A metamagnetic transition was observed in the magnetization measurement, which revealed the coexistence of charge ordering (CO) and ferromagnetic (FM) phases. With decreasing magnetic field, the field-induced FM phases remained stable even when the magnetic field decreased to zero. This result suggests that ferromagnetic interactions are enhanced due to the effect of the pulsed high magnetic field, which makes the doped manganites a good system for magnetoresistance materials.

  14. Field-induced phase transition in a metalorganic spin-dimer system-a potential model system to study Bose-Einstein condensation of magnons

    International Nuclear Information System (INIS)

    Tsui, Y.; Bruehl, A.; Removic-Langer, K.; Pashchenko, V.; Wolf, B.; Donath, G.; Pikul, A.; Kretz, T.; Lerner, H.-W.; Wagner, M.; Salguero, A.; Saha-Dasgupta, T.; Rahaman, B.; Valenti, R.; Lang, M.

    2007-01-01

    We report on the results obtained from studying electron spin resonance, magnetic susceptibility, specific heat and thermal expansion experiments on a metalorganic spin-dimer system, C 36 H 48 Cu 2 F 6 N 8 O 12 S 2 (TK91). According to the first principle Density Functional Theory calculations, the compound represents a 3D-coupled dimer system with intradimer coupling J 1 /k B ∼ 10K and interdimer couplings J 2 /k B ∼J 3 /k B ∼ 1K. The measurements have been performed on both pressed powder and single-crystal samples in external magnetic fields up to 12T and at low temperatures down to ∼ 0.2K. Susceptibility measurements reveal a spin-gap behavior consistent with the theoretical results. Furthermore, clear indications of a field-induced phase transition have been observed. A similar field-induced phase transition was also detected in an inorganic compound TlCuCl 3 and was interpreted as Bose-Einstein condensation (BEC) of magnons. The possibility of changing both the intradimer and interdimer couplings in TK91 by chemical substitutions makes the system a potentially good system to study BEC of magnons

  15. Electric field-induced phase transitions in Li-modified Na{sub 0.5}K{sub 0.5}NbO{sub 3} at the polymorphic phase boundary

    Energy Technology Data Exchange (ETDEWEB)

    Iamsasri, Thanakorn; Jones, Jacob L., E-mail: jacobjones@ncsu.edu [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Tutuncu, Goknur [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Uthaisar, Chunmanus; Pojprapai, Soodkhet [School of Ceramic Engineering, Institute of Engineering, Suranaree University of Technology, Nakorn Ratchasima 30000 (Thailand); Wongsaenmai, Supattra [Program in Materials Science, Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand)

    2015-01-14

    The electric field-induced phase transitions in Li-modified Na{sub 0.5}K{sub 0.5}NbO{sub 3} at the polymorphic phase boundary (PPB) were observed using in situ X-ray diffraction. The ratio of monoclinic to tetragonal phase fraction was used as an indicator of the extent and reversibility of the phase transitions. The reversibility of the phase transition was greater in compositions further from the PPB. These results demonstrate that the field-induced phase transition is one of the origins of high piezoelectric properties in lead-free ferroelectric materials.

  16. Magnetic properties of Gd5(Si1.5Ge2.5) near the temperature and magnetic field induced first order phase transition

    International Nuclear Information System (INIS)

    Levin, E.M.; Gschneidner, K.A.; Pecharsky, V.K.

    2001-01-01

    The temperature (from 5 to 300 K) and DC magnetic field (from 0 to 90 kOe) dependencies of the DC magnetization and magnetic susceptibility, and the temperature (from 5 to 350 K) dependency of the AC magnetic susceptibility of Gd 5 (Si 1.5 Ge 2.5 ) have been studied. The temperature and/or magnetic field induced magnetic phase transition in Gd 5 (Si 1.5 Ge 2.5 ) is a first order ferromagnet-paramagnet transition. The temperature of the magnetic transition in low AC magnetic field is 206 and 217 K for cooling and heating, respectively. The DC magnetic field increases the transition temperature by ∼0.36 K/kOe indicating that the paramagnetic phase can be reversibly transformed into the ferromagnetic phase. When the magnetic field is removed, the ferromagnetic phase transforms into the paramagnetic phase showing a large remanence-free hysteresis. The magnetic phase diagram based on the isothermal magnetic field dependence of the DC magnetization at various temperatures for Gd 5 (Si 1.5 Ge 2.5 ) is proposed. The magnetic field dependence of the magnetization in the vicinity of the first order phase transition shows evidence for the formation of a magnetically heterogeneous system in the volume of Gd 5 (Si 1.5 Ge 2.5 ) specimen where the magnetically ordered (ferromagnetic) and disordered (paramagnetic) phases co-exist

  17. Magnetic field induced superconductor-insulator transitions for ultra-thin Bi films on the different underlayers

    International Nuclear Information System (INIS)

    Makise, K; Kawaguti, T; Shinozaki, B

    2009-01-01

    This work shows the experimental results of the superconductor-insulator (S-I) transition for ultra-thin Bi films in magnetic fields. The quench-condensed (q-c) Bi film onto insulating underlayers have been interpreted to be homogeneous. In contrast, the Bi film without underlayers has been regarded as a granular film. The electrical transport properties of ultra-thin metal films near the S-I transition depend on the structure of the film. In order to confirm the effect of the underlayer to the homogeneity of the superconducting films, we investigate the characteristics of S-I transitions of q-c nominally homogeneous Bi films on underlayers of two insulating materials, SiO, and Sb. Under almost the same deposition condition except for the material of underlayer, we prepared the Bi films by repeating the additional deposition and performed in-situ electrical measurement. It is found that the transport properties near the S-I transitions show the remarkable difference between two films on different underlayers. As for Bi films on SiO, it turned out that the temperature dependence of resistance per square R sq (T) of the field-tuned transition and the thickness-tuned transition shows similar behavior; it was a thermally activated form. On the other hand, the R sq (T) of Bi films on Sb for thickness-tuned S-I transition showed logarithmic temperature dependence, but that for field-tuned S-I transition showed a thermally activated form.

  18. Electric-field-induced phase transitions in co-doped Pb(Zr1−xTixO3 at the morphotropic phase boundary

    Directory of Open Access Journals (Sweden)

    Daniel J Franzbach

    2014-02-01

    Full Text Available The strain- and polarization-electric field behavior was characterized at room temperature for Pb0.98Ba0.01(Zr1−xTix0.98Nb0.02O3, 0.40 ≤ x ≤ 0.60. The investigated compositions were located in the vicinity of the morphotropic phase boundary, giving insight into the influence of crystal structure on the hysteretic ferroelectric behavior. The remanent strain of particular compositions is shown to be larger than theoretically allowed by ferroelectric switching alone, indicating the presence of additional remanent strain mechanisms. A phenomenological free energy analysis was used to simulate the effect of an applied electric field on the initial equilibrium phase. It is shown that electric-field-induced phase transitions in polycrystalline ferroelectrics can account for the experimental observations. The experimental and simulation results are contrasted to neutron diffraction measurements performed on representative compositions in the virgin and remanent states.

  19. High field induced magnetic transitions in the Y0.7E r0.3F e2D4.2 deuteride

    Science.gov (United States)

    Paul-Boncour, V.; Guillot, M.; Isnard, O.; Hoser, A.

    2017-09-01

    The influence of the partial Er for Y substitution on the crystal structure and magnetic properties of YF e2D4.2 has been investigated by high field magnetization and neutron diffraction experiments. Y0.7E r0.3F e2D4.2 compound crystallizes in the same monoclinic structure as YF e2D4.2 described in P c (P1c1) space group with D atoms located in 18 different tetrahedral interstitial sites. A cell volume contraction of 0.6% is observed upon Er substitution, inducing large modification of the magnetic properties. Electronic effect of D insertion as well as lowering of crystal symmetry are important factors determining the magnetic properties of Fe sublattice, which evolves towards more delocalized behavior and modifying the Er-Fe exchange interactions. In the ground state, the Er and Fe moments are arranged ferrimagnetically within the plane perpendicular to the monoclinic b axis and with average moments mEr=6.4 (3 ) μBEr-1 and mFe=2.0 (1 ) μBFe-1 at 10 K. Upon heating, mEr decreases progressively until TEr=55 K . Between 55 K and 75 K, the Fe sublattice undergoes a first-order ferromagnetic-antiferromagnetic (FM-AFM) transition with a cell volume contraction due to the itinerant metamagnetic behavior of one Fe site. In the AFM structure, mFe decreases until the Néel temperature TN=125 K . At high field, two different types of field induced transitions are observed. The Er moments become parallel to the Fe one and saturates to the E r3 + free ion value, leading to an unusual field induced FM arrangement at a transition field BTrans of only 78 kG below 30 K. Then above TM0=66 K , an AFM-FM transition of the Fe sublattice, accompanied by a cell volume increase is observed. BTrans increases linearly versus temperature and with a larger d BTrans/d T slope than for YF e2D4.2 . This has been explained by the additional contribution of Er induced moments above BTrans.

  20. Quantum critical scaling for field-induced quantum phase transition in a periodic Anderson-like model polymer chain

    Energy Technology Data Exchange (ETDEWEB)

    Ding, L.J., E-mail: dinglinjie82@126.com; Zhong, Y.

    2017-07-15

    Highlights: • The quantum critical scaling is investigated by Green’s function theory. • The obtained power-law critical exponents (β, δ and α) obey the critical scaling relation α + β(1 + δ) = 2. • The scaling hypothesis equations are proposed to verify the scaling analysis. - Abstract: The quantum phase transition and thermodynamics of a periodic Anderson-like polymer chain in a magnetic field are investigated by Green’s function theory. The T-h phase diagram is explored, wherein a crossover temperature T{sup ∗} denoting the gapless phase crossover into quantum critical regimes, smoothly connects near the critical fields to the universal linear line T{sup ∗} ∼ (h − h{sub c,s}), and ends at h{sub c,s}, providing a new route to capture quantum critical point (QCP). The quantum critical scaling around QCPs is demonstrated by analyzing magnetization, specific heat and Grüneisen parameter Γ{sub h}, which provide direct access to distill the power-law critical exponents (β, δ and α) obeying the critical scaling relation α + β(1 + δ) = 2, analogous to the quantum spin system. Furthermore, scaling hypothesis equations are proposed to check the scaling analysis, for which all the data collapse onto a single curve or two independent branches for the plot against an appropriate scaling variable, indicating the self-consistency and reliability of the obtained critical exponents.

  1. Transport and screen blockage characteristics of reflective metallic insulation materials

    International Nuclear Information System (INIS)

    Brocard, D.N.

    1984-01-01

    In the event of a LOCA within a nuclear power plant, it is possible for insulation debris to be generated by the break jet. Such debris has the potential for PWR sump screen (or BWR RHR suction inlet) blockage and thus can affect the long-term recirculation capability. In addition to the variables of break jet location and orientation, the types and quantities of debris which could be generated are dependent on the insulation materials employed. This experimental investigation was limited to reflective metallic insulation and components thereof. The study was aimed at determining the flow velocities needed to transport the insulation debris to the sump screens and the resulting modes of screen blockage. The tests revealed that thin metallic foils (0.0025 in. and 0.004 in.) could transport at low flow velocities, 0.2 to 0.5 ft/sec. Thicker foils (0.008 in.) transported at higher velocities, 0.4 to 0.8 ft/sec, and as fabricated half cylinder insulation units required velocities in excess of 1.0 ft/sec for transport. The tests also provided information on screen blockage patterns that showed blockage could occur at the lower portion of the screen as foils readily flipped on the screen when reaching it

  2. Nanoantenna couplers for metal-insulator-metal waveguide interconnects

    Science.gov (United States)

    Onbasli, M. Cengiz; Okyay, Ali K.

    2010-08-01

    State-of-the-art copper interconnects suffer from increasing spatial power dissipation due to chip downscaling and RC delays reducing operation bandwidth. Wide bandwidth, minimized Ohmic loss, deep sub-wavelength confinement and high integration density are key features that make metal-insulator-metal waveguides (MIM) utilizing plasmonic modes attractive for applications in on-chip optical signal processing. Size-mismatch between two fundamental components (micron-size fibers and a few hundred nanometers wide waveguides) demands compact coupling methods for implementation of large scale on-chip optoelectronic device integration. Existing solutions use waveguide tapering, which requires more than 4λ-long taper distances. We demonstrate that nanoantennas can be integrated with MIM for enhancing coupling into MIM plasmonic modes. Two-dimensional finite-difference time domain simulations of antennawaveguide structures for TE and TM incident plane waves ranging from λ = 1300 to 1600 nm were done. The same MIM (100-nm-wide Ag/100-nm-wide SiO2/100-nm-wide Ag) was used for each case, while antenna dimensions were systematically varied. For nanoantennas disconnected from the MIM; field is strongly confined inside MIM-antenna gap region due to Fabry-Perot resonances. Major fraction of incident energy was not transferred into plasmonic modes. When the nanoantennas are connected to the MIM, stronger coupling is observed and E-field intensity at outer end of core is enhanced more than 70 times.

  3. Optical transmission theory for metal-insulator-metal periodic nanostructures

    Directory of Open Access Journals (Sweden)

    Blanchard-Dionne Andre-Pierre

    2016-11-01

    Full Text Available A semi-analytical formalism for the optical properties of a metal-insulator-metal periodic nanostructure using coupled-mode theory is presented. This structure consists in a dielectric layer in between two metallic layers with periodic one-dimensional nanoslit corrugation. The model is developed using multiple-scattering formalism, which defines transmission and reflection coefficients for each of the interface as a semi-infinite medium. Total transmission is then calculated using a summation of the multiple paths of light inside the structure. This method allows finding an exact solution for the transmission problem in every dimension regime, as long as a sufficient number of diffraction orders and guided modes are considered for the structure. The resonant modes of the structure are found to be related to the metallic slab only and to a combination of both the metallic slab and dielectric layer. This model also allows describing the resonant behavior of the system in the limit of a small dielectric layer, for which discontinuities in the dispersion curves are found. These discontinuities result from the out-of-phase interference of the different diffraction orders of the system, which account for field interaction for both inner interfaces of the structure.

  4. Infrared plasmonic nano-lasers based on Metal Insulator Metal waveguides

    NARCIS (Netherlands)

    Hill, M.T.

    2010-01-01

    We will present our latest results on metal-insulator-metal waveguide devices, in particular reducing the dimensions of devices and distributed feedback lasers. Also we will examine potential useful applications for metal nano-lasers.

  5. Systematic study of metal-insulator-metal diodes with a native oxide

    KAUST Repository

    Donchev, E.; Gammon, P. M.; Pang, J. S.; Petrov, P. K.; Alford, N. McN.

    2014-01-01

    © 2014 SPIE. In this paper, a systematic analysis of native oxides within a Metal-Insulator-Metal (MIM) diode is carried out, with the goal of determining their practicality for incorporation into a nanoscale Rectenna (Rectifying Antenna

  6. Electric field-induced phase transitions and composition-driven nanodomains in rhombohedral-tetragonal potassium-sodium niobate-based ceramics

    KAUST Repository

    Lv, Xiang

    2017-08-07

    The mechanisms behind the high piezoelectricity of (K,Na)NbO3-based lead-free ceramics were investigated, including electric field-induced phase transitions and composition-driven nanodomains. The construction of a rhombohedral-tetragonal (R-T) phase boundary, confirmed using several advanced techniques, allowed a large piezoelectric constant (d33) of 450 ± 5 pC/N to be obtained in (1-x)K0.4Na0.6Nb0.945Sb0.055O3-xBi0.5Na0.5(Hf1-ySny)O3 (0 ≤ x ≤ 0.06 and 0 ≤ y ≤ 0.5) ceramics possessing an ultralow ΔUT-R of 7.4 meV. More importantly, the existence of an intermediate phase, i.e., the electric-induced phase (EIP), bridging the rhombohedral R [Ps//(111)] and tetragonal T [Ps//(001)] phases during the polarization rotation was demonstrated. Striped nanodomains (∼40 nm) that easily responded to external stimulation were also observed in the ceramics with an R-T phase. Thus, the enhanced piezoelectric properties originated from EIP and the striped nanodomains.

  7. Soft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS2.

    Science.gov (United States)

    Moon, Byoung Hee; Bae, Jung Jun; Joo, Min-Kyu; Choi, Homin; Han, Gang Hee; Lim, Hanjo; Lee, Young Hee

    2018-05-24

    Quantum localization-delocalization of carriers are well described by either carrier-carrier interaction or disorder. When both effects come into play, however, a comprehensive understanding is not well established mainly due to complexity and sparse experimental data. Recently developed two-dimensional layered materials are ideal in describing such mesoscopic critical phenomena as they have both strong interactions and disorder. The transport in the insulating phase is well described by the soft Coulomb gap picture, which demonstrates the contribution of both interactions and disorder. Using this picture, we demonstrate the critical power law behavior of the localization length, supporting quantum criticality. We observe asymmetric critical exponents around the metal-insulator transition through temperature scaling analysis, which originates from poor screening in insulating regime and conversely strong screening in metallic regime due to free carriers. The effect of asymmetric scaling behavior is weakened in monolayer MoS 2 due to a dominating disorder.

  8. Strain engineering and one-dimensional organization of metal-insulator domains in single-crystal vanadium dioxide beams.

    Science.gov (United States)

    Cao, J; Ertekin, E; Srinivasan, V; Fan, W; Huang, S; Zheng, H; Yim, J W L; Khanal, D R; Ogletree, D F; Grossman, J C; Wu, J

    2009-11-01

    Correlated electron materials can undergo a variety of phase transitions, including superconductivity, the metal-insulator transition and colossal magnetoresistance. Moreover, multiple physical phases or domains with dimensions of nanometres to micrometres can coexist in these materials at temperatures where a pure phase is expected. Making use of the properties of correlated electron materials in device applications will require the ability to control domain structures and phase transitions in these materials. Lattice strain has been shown to cause the coexistence of metallic and insulating phases in the Mott insulator VO(2). Here, we show that we can nucleate and manipulate ordered arrays of metallic and insulating domains along single-crystal beams of VO(2) by continuously tuning the strain over a wide range of values. The Mott transition between a low-temperature insulating phase and a high-temperature metallic phase usually occurs at 341 K in VO(2), but the active control of strain allows us to reduce this transition temperature to room temperature. In addition to device applications, the ability to control the phase structure of VO(2) with strain could lead to a deeper understanding of the correlated electron materials in general.

  9. A comparative study of magnetic field induced meta-magnetic transition in nanocrystalline and bulk Pr0.65(Ca0.7Sr0.3)0.35MnO3 compound

    Science.gov (United States)

    Saha, Suvayan; Das, Kalipada; Bandyopadhyay, Sudipta; Das, I.

    2017-06-01

    In our present study we highlight the observations of external magnetic field induced sharp meta-magnetic transition in polycrystalline bulk as well as nanocrystalline form of Pr0.65(Ca0.7Sr0.7)0.35MnO3 compound. Interestingly, such behavior persists in the nanoparticles regardless of the disorder broadened transition. However, higher magnetic field is required for nanoparticles having average particle size ∼40 nm for such meta-magnetic transition, which differs from the general trends of the pure charge ordered nano materials. The interfacial strain between the different magnetic domains plays the important role in magnetic isothermal properties of nanoparticles, when the samples are cooled down in different cooling field. Additionally, both the bulk and nanoparticle compounds exhibit spontaneous phase separation and significantly large magnetoresistance at the low temperature region due to the melting of charge ordered fraction.

  10. Fingerprints of field-induced Berezinskii–Kosterlitz–Thouless transition in quasi-two-dimensional S=1/2 Heisenberg magnets Cu(en)(H2O)2SO4 and Cu(tn)Cl2

    International Nuclear Information System (INIS)

    Baranová, Lucia; Orendáčová, Alžbeta; Čižmár, Erik; Tarasenko, Róbert; Tkáč, Vladimír; Orendáč, Martin; Feher, Alexander

    2016-01-01

    Organo-metallic compounds Cu(en)(H 2 O) 2 SO 4 (en=C 2 H 8 N 2 ) and Cu(tn)Cl 2 (tn=C 3 H 10 N 2 ) representing S=1/2 quasi-two-dimensional Heisenberg antiferromagnets with an effective intra-layer exchange coupling J/k B ≈3 K, have been examined by specific heat measurements at temperatures down to nominally 50 mK and magnetic fields up to 14 T. A comparative analysis of magnetic specific heat in zero magnetic field revealed nearly identical contribution of short-range magnetic correlations and significant differences were observed at lowest temperatures. A phase transition to long-range order was observed in Cu(en)(H 2 O) 2 SO 4 at T C =0.9 K while hidden in Cu(tn)Cl 2 . A response of both compounds to the application of magnetic field has rather universal features characteristic for a field-induced Berezinskii–Kosterlitz–Thouless transition theoretically predicted for ideal two-dimensional magnets. - Highlights: • Magnetic specific heat of Cu(en)(H 2 O) 2 SO 4 (1) and Cu(tn)Cl 2 (2) was analysed. • In zero magnetic field, (1) and (2) behave as quasi-two-dimensional magnets. • We observed universal thermodynamic response of (1) and (2) to applied field. • Features of field-induced Berezinskii–Kosterlitz–Thouless transition were detected.

  11. Magnetic and transport properties of Ni2MnGa-BaTiO3 metal-insulator particulate composite with percolation threshold

    International Nuclear Information System (INIS)

    Won, C.J.; Kambale, R.C.; Hur, N.

    2011-01-01

    Highlights: → The Ni 2 MnGa-BaTiO 3 type composites were first time prepared by solid state reaction. → Temperature dependent magnetic properties reveal two kinds of transitions in these composite. → The present materials show negative magnetoresistance effect. → The present studies on magnetic and electrical transport of metal/insulator (NMG/BTO) composites shows the resistivity change associated to filamentary conducting path at percolation threshold. - Abstract: Here we report the magnetic and transport properties of the metal/insulator (f NMG )Ni 2 MnGa/(1 - f NMG )BaTiO 3 composites. The X-ray diffraction study confirms the formation of both the phases in composite. The microstructure reveals that the conducting Ni 2 MnGa particles are well dispersed in an insulating BaTiO 3 matrix. Temperature dependent magnetization shows two transitions one above 300 K and other below 150 K. The temperature dependence resistivity near the percolation threshold f NMG = 0.4 had drastic changes which is higher than the f NMG = 0.5. Also the negative magnetoresistance effect was observed for the studied materials. We suggest that magnetic and transport properties at the percolation threshold can be adjusted by the strain from the surrounding insulator particle.

  12. Magnetic-field-induced irreversible antiferromagnetic–ferromagnetic phase transition around room temperature in as-cast Sm–Co based SmCo{sub 7−x}Si{sub x} alloys

    Energy Technology Data Exchange (ETDEWEB)

    Feng, D.Y.; Zhao, L.Z.; Liu, Z.W., E-mail: zwliu@scut.edu.cn

    2016-04-15

    A magnetic-field-induced irreversible metamagnetic phase transition from antiferro- to ferromagnetism, which leads to an anomalous initial-magnetization curve lying outside the magnetic hysteresis loop, is reported in arc-melted SmCo{sub 7−x}Si{sub x} alloys. The transition temperatures are near room temperature, much higher than other compounds with similar initial curves. Detailed investigation shows that this phenomenon is dependent on temperature, magnetic field and Si content and shows some interesting characteristics. It is suggested that varying interactions between the Sm and Co layers in the crystal are responsible for the formation of a metastable AFM structure, which induces the anomalous phenomenon in as-cast alloys. The random occupation of 3g sites by Si and Co atoms also has an effect on this phenomenon.

  13. Simulation studies of current transport in metal-insulator-semiconductor Schottky barrier diodes

    International Nuclear Information System (INIS)

    Chand, Subhash; Bala, Saroj

    2007-01-01

    The current-voltage characteristics of Schottky diodes with an interfacial insulator layer are analysed by numerical simulation. The current-voltage data of the metal-insulator-semiconductor Schottky diode are simulated using thermionic emission diffusion (TED) equation taking into account an interfacial layer parameter. The calculated current-voltage data are fitted into ideal TED equation to see the apparent effect of interfacial layer parameters on current transport. Results obtained from the simulation studies shows that with mere presence of an interfacial layer at the metal-semiconductor interface the Schottky contact behave as an ideal diode of apparently high barrier height (BH), but with same ideality factor and series resistance as considered for a pure Schottky contact without an interfacial layer. This apparent BH decreases linearly with decreasing temperature. The effects giving rise to high ideality factor in metal-insulator-semiconductor diode are analysed. Reasons for observed temperature dependence of ideality factor in experimentally fabricated metal-insulator-semiconductor diodes are analysed and possible mechanisms are discussed

  14. Martensitic transition near room temperature and the temperature- and magnetic-field-induced multifunctional properties of Ni49CuMn34In16 alloy

    Science.gov (United States)

    Sharma, V. K.; Chattopadhyay, M. K.; Khandelwal, A.; Roy, S. B.

    2010-11-01

    A near room-temperature martensitic transition is observed in the ferromagnetic austenite state of Ni50Mn34In16 alloy with 2% Cu substitution at the Ni site. Application of magnetic field in the martensite state induces a reverse martensitic transition in this alloy. dc magnetization, magnetoresistance and strain measurements in this alloy reveal that associated with this martensitic transition there exist a large magnetocaloric effect, a large magnetoresitance and a magnetic-field temperature-induced strain. This NiMnIn alloy system thus is an example of an emerging class of magnetic materials whose physical properties can be tuned by suitable chemical substitutions, to achieve magnetic-field and temperature-induced multifunctional properties at and around room temperature

  15. Electrical transport and capacitance characteristics of metal-insulator-metal structures using hexagonal and cubic boron nitride films as dielectrics

    Science.gov (United States)

    Teii, Kungen; Kawamoto, Shinsuke; Fukui, Shingo; Matsumoto, Seiichiro

    2018-04-01

    Metal-insulator-metal capacitor structures using thick hexagonal and cubic boron nitride (hBN and cBN) films as dielectrics are produced by plasma jet-enhanced chemical vapor deposition, and their electrical transport and capacitance characteristics are studied in a temperature range of 298 to 473 K. The resistivity of the cBN film is of the order of 107 Ω cm at 298 K, which is lower than that of the hBN film by two orders of magnitude, while it becomes the same order as the hBN film above ˜423 K. The dominant current transport mechanism at high fields (≥1 × 104 V cm-1) is described by the Frenkel-Poole emission and thermionic emission models for the hBN and cBN films, respectively. The capacitance of the hBN film remains stable for a change in alternating-current frequency and temperature, while that of the cBN film has variations of at most 18%. The dissipation factor as a measure of energy loss is satisfactorily low (≤5%) for both films. The origin of leakage current and capacitance variation is attributed to a high defect density in the film and a transition interlayer between the substrate and the film, respectively. This suggests that cBN films with higher crystallinity, stoichiometry, and phase purity are potentially applicable for dielectrics like hBN films.

  16. Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness

    Science.gov (United States)

    Ahmadi-Majlan, Kamyar; Chen, Tongjie; Lim, Zheng Hui; Conlin, Patrick; Hensley, Ricky; Chrysler, Matthew; Su, Dong; Chen, Hanghui; Kumah, Divine P.; Ngai, Joseph H.

    2018-05-01

    We present electrical and structural characterization of epitaxial LaTiO3/SrTiO3 heterostructures integrated directly on Si(100). By reducing the thicknesses of the heterostructures, an enhancement in carrier-carrier scattering is observed in the Fermi liquid behavior, followed by a metal to insulator transition in the electrical transport. The insulating behavior is described by activated transport, and its onset occurs near an occupation of 1 electron per Ti site within the SrTiO3, providing evidence for a Mott driven transition. We also discuss the role that structure and gradients in strain could play in enhancing the carrier density. The manipulation of Mott metal-insulator behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.

  17. Abnormal magnetization and field-induced transition in (La{sub 0.73}Bi{sub 0.27}){sub 0.67}Ca{sub 0.33}MnO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Li Haina; Wu Yuying [Department of Physics, Huazhong University of Science and Technology, Wuhan (China); Yu Hongwei [College of Science, Naval University of Engineering, Wuhan (China); Chen Ziyu [Department of Physics, Huazhong University of Science and Technology, Wuhan (China); Huang Yan; Wang Shaoliang; Li Liang [Wuhan Pulsed High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan (China); Xia Zhengcai, E-mail: xia9020@hust.edu.c [Wuhan Pulsed High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan (China)

    2010-09-15

    The magnetic field dependence of magnetization of Bi doped manganites (La{sub 1-x}Bi{sub x}){sub 0.67}Ca{sub 0.33}MnO{sub 3} (x=0.27) was investigated at different temperatures with a pulsed high magnetic field. A metamagnetic transition was observed in the magnetization measurement, which revealed the coexistence of charge ordering (CO) and ferromagnetic (FM) phases. With decreasing magnetic field, the field-induced FM phases remained stable even when the magnetic field decreased to zero. This result suggests that ferromagnetic interactions are enhanced due to the effect of the pulsed high magnetic field, which makes the doped manganites a good system for magnetoresistance materials.

  18. Bipolar resistive switching in metal-insulator-semiconductor nanostructures based on silicon nitride and silicon oxide

    Science.gov (United States)

    Koryazhkina, M. N.; Tikhov, S. V.; Mikhaylov, A. N.; Belov, A. I.; Korolev, D. S.; Antonov, I. N.; Karzanov, V. V.; Gorshkov, O. N.; Tetelbaum, D. I.; Karakolis, P.; Dimitrakis, P.

    2018-03-01

    Bipolar resistive switching in metal-insulator-semiconductor (MIS) capacitor-like structures with an inert Au top electrode and a Si3N4 insulator nanolayer (6 nm thick) has been observed. The effect of a highly doped n +-Si substrate and a SiO2 interlayer (2 nm) is revealed in the changes in the semiconductor space charge region and small-signal parameters of parallel and serial equivalent circuit models measured in the high- and low-resistive capacitor states, as well as under laser illumination. The increase in conductivity of the semiconductor capacitor plate significantly reduces the charging and discharging times of capacitor-like structures.

  19. All-optical bit magnitude comparator device using metal-insulator-metal plasmonic waveguide

    Science.gov (United States)

    Kumar, Santosh; Singh, Lokendra; Chen, Nan-Kuang

    2017-12-01

    A plasmonic metal-insulator-metal (MIM) waveguide has great success in confining the surface plasmon up to a deep subwavelength scale. The structure of a nonlinear Mach-Zehnder interferometer (MZI) using a plasmonic MIM waveguide has been analyzed. A one-bit magnitude comparator has been designed using an MZI and two linear control waveguides. The device works on the Kerr effect inside the plasmonics waveguide. The mathematical description of the device is explained. The simulation of the device is done using MATLAB® and the finite-difference time-domain (FDTD) method.

  20. Tunable all-optical plasmonic rectifier in nanoscale metal-insulator-metal waveguides.

    Science.gov (United States)

    Xu, Yi; Wang, Xiaomeng; Deng, Haidong; Guo, Kangxian

    2014-10-15

    We propose a tunable all-optical plasmonic rectifier based on the nonlinear Fano resonance in a metal-insulator-metal plasmonic waveguide and cavities coupling system. We develop a theoretical model based on the temporal coupled-mode theory to study the device physics of the nanoscale rectifier. We further demonstrate via the finite difference time domain numerical experiment that our idea can be realized in a plasmonic system with an ultracompact size of ~120×800  nm². The tunable plasmonic rectifier could facilitate the all-optical signal processing in nanoscale.

  1. Mode conversion in metal-insulator-metal waveguide with a shifted cavity

    Science.gov (United States)

    Wang, Yueke; Yan, Xin

    2018-01-01

    We propose a method, which is utilized to achieve the plasmonic mode conversion in metal-insulator-metal (MIM) waveguide, theoretically. Our proposed structure is composed of bus waveguides and a shifted cavity. The shifted cavity can choose out a plasmonic mode (a- or s-mode) when it is in Fabry-Perot (FP) resonance. The length of the shifted cavity L is carefully chosen, and our structure can achieve the mode conversion between a- and s-mode in the communication region. Besides, our proposed structure can also achieve plasmonic mode-division multiplexing. All the numerical simulations are carried on by the finite element method to verify our design.

  2. Simulation of high field induced first-order phase transition in Bi2Sr2CaCu2O8

    International Nuclear Information System (INIS)

    Viana, Leonardo P.; Raposo, E.P.; Coutinho-Filho, M.D.

    2004-01-01

    The occurrence and nature of first-order transitions (FOT) in Bi 2 Sr 2 CaCu 2 O 8 (BSCCO) are still open issues, although results from a number of experiments do support a FOT both at low and high fields. We present a FOT obtained via Monte Carlo simulations using the Lawrence-Doniach model for layered superconductors, focusing on a clean 3D sample of BSCCO, with dc field applied perpendicular to the CuO 2 planes. Our results confirm Nelson's predictions for the random-walk-like diffusion of melted lines, contrarily to some recent suggestions. Further results for the z-dependent density-density correlation function indicate that in the high field regime the CuO 2 planes decouple along with line melting, in agreement with experimental observations in BSCCO

  3. Domain configuration changes under electric field-induced antiferroelectric-ferroelectric phase transitions in NaNbO3-based ceramics

    International Nuclear Information System (INIS)

    Guo, Hanzheng; Randall, Clive A.; Shimizu, Hiroyuki; Mizuno, Youichi

    2015-01-01

    We recently developed a feasible crystal chemistry strategy to stabilize the antiferroelectricity in NaNbO 3 through a chemical substitution to decrease the tolerance factor and increase the average electronegativity of the system [Shimizu et al., Dalton Trans. 44, 10763 (2015) and Guo et al., J. Appl. Phys. 117, 214103 (2015)]. Two novel lead-free antiferroelectric (AFE) solid solutions, (1-x)NaNbO 3 -xCaZrO 3 and (1-x)NaNbO 3 -xSrZrO 3 , have been found to exhibit the double polarization hysteresis typical of a reversible AFE ↔ ferroelectric (FE) phase transition. In this study, as demonstrated by (1-x)NaNbO 3 -xCaZrO 3 system, the influence of chemical modification and electrical poling on the AFE/FE phase stability was investigated, primarily focusing on the microstructural and crystallographic evolutions. Together with the macroscopic polarization hysteresis measurements, a well-demonstrated structure-property relationship was presented. It was found that the CaZrO 3 substitution into NaNbO 3 can effectively destabilize the FE Q phase and correspondingly lead to a spontaneous reverting to AFE P phase. In contrast to the reversible AFE ↔ FE phase transition, the domain morphology evolution exhibits irreversible nature with a growing process of the orientational domains after applying electric field. Moreover, a multiple-zone axes electron diffraction map of P and Q phases has been summarized and is believed to be an efficient diagram to determine the AFE/FE nature of the NaNbO 3 -based systems

  4. Magnetism and metal insulator transition in FeSi and FeGe. Ab Initio investigations of the electronic structure; Magnetismus und Metall-Isolator-Uebergang in FeSi und FeGe. Ab-initio-Untersuchungen der elektronischen Struktur

    Energy Technology Data Exchange (ETDEWEB)

    Neef, Matthias

    2007-03-19

    Aim of this thesis was to reach by a systematic study of different ab initio procedures an improved description of the electronic properties of FeSi and FeGe. Central result is the itinerant description of FeSi as a semiconductor in the neighbourhood of a ferromagnetic instability. The regardment of the nonlocal exchange in the effective one-particle approximation leads to a metastable magnetic state scarcely above the magnetic ground state. The application of the hybrid functional leads to a 1st order metal-isolator transition for large lattice parameters: FeSi transforms at increasement of the lattice parameter from an unmagnetic isolator to a magnetic metal. A similar behavior is found in the isostructural compound FeGe. The two systems FeSi and FeGe were systematically and detailedly analyzed by means of ab initio procedures. Thereby the structural, electronic, and magnetic properties were studied with DFT and HF calculations. Both calculations with spin polarization and without spin polarization were performed.

  5. Field-induced magnetic phase transitions and correlated electronic states in the hexagonal RAgGE and RPtIn series

    Energy Technology Data Exchange (ETDEWEB)

    Morosan, Emilia [Iowa State Univ., Ames, IA (United States)

    2005-01-01

    The present work was initially motivated by the desire to continue the study of complex metamagnetism in relation to the crystal structure of various compounds; this study already included tetragonal compounds like HoNi2B2C (Canfield 1997b; Kalatsky 1998) and DyAgSb2 (Myers 1999), in which the rare earths occupy unique tetragonal positions. We intended to find hexagonal systems suited for such a study, with complex metamagnetic properties, and the search for extremely anisotropic hexagonal compounds turned into a rewarding exploration. We identified and grew most of the heavy rare earth members of two isostructural series, RAgGe and RPtIn, both belonging to the hexagonal Fe2P family of materials. In each of these series we found one compound, TmAgGe, and TbPtIn respectively, that was suitable for a simple study of angular dependent metamagnetism: they had three rare earth ions in the unit cell, positioned at a unique crystallographic site with orthorhombic point symmetry. The magnetization of both TmAgGe and TbPtIn was extremely anisotropic, with larger values for the in-plane orientation of the applied field than in the axial direction. Complex metamagnetic transitions existed for field within the ab-plane, and, similar to the case of the tetragonal compounds RNi2B2C and DyAgSb2, they depended on the field orientation within the basal plane. We were thus able to develop a two-dimensional model, the three co-planar Ising-like systems model, which described well the angular dependence of the metamagnetic transitions in the TmAgGe and TbPtIn hexagonal compounds. Having three magnetic moments in the hexagonal unit cell, in orthorhombic point symmetry positions, added to the complexity of the analysis compared to the case of tetragonal compounds having one rare earth atom per unit cell, in tetragonal point symmetry. However, the three co-planar Ising-like systems model yielded complex, but

  6. First-principles calculations on strain and electric field induced band modulation and phase transition of bilayer WSe2sbnd MoS2 heterostructure

    Science.gov (United States)

    Lei, Xiang; Yu, Ke

    2018-04-01

    A purposeful modulation of physical properties of material via change external conditions has long captured people's interest and can provide many opportunities to improve the specific performance of electronic devices. In this work, a comprehensive first-principles survey was performed to elucidate that the bandgap and electronic properties of WSe2sbnd MoS2 heterostructure exhibited unusual response to exterior strain and electric field in comparison with pristine structures. It demonstrates that the WSe2sbnd MoS2 is a typical type-II heterostructure, and thus the electron-hole pairs can be effectively spatially separated. The external effects can trigger the electronic phase transition from semiconducting to metallic state, which originates from the internal electric evolution induced energy-level shift. Interestingly, the applied strain shows no direction-depended character for the modulation of bandgap of WSe2sbnd MoS2 heterostructure, while it exists in the electric field tuning processes and strongly depends on the direction of the electric field. Our findings elucidate the tunable electronic property of bilayer WSe2sbnd MoS2 heterostructure, and would provide a valuable reference to design the electronic nanodevices.

  7. Electron mobility, conductivity, and superconductivity near the metal-insulator transition

    International Nuclear Information System (INIS)

    Fiory, A.T.; Hebard, A.F.

    1984-01-01

    The disorder parameter k/sub F/l for amorphous InO/sub x/ is measured by a novel application of the surface electric field effect and is varied by thermal annealing. The normal-state conductivity and superconducting T/sub c/ both vary as (k/sub F/l) -2 and critical disorder occurs at k/sub F/lroughly-equal3/sup 1/2/, as a result of Anderson localization in this low-carrier density material

  8. Scaling behaviors of magnetoconductivity in amorphous indium oxide near the metal-insulator transition

    CERN Document Server

    Lee, Y J; Kim, Y S

    2000-01-01

    Magnetoconductivity is measured in an amorphous indium-oxide sample which is in the microscopic region. Two different scaling behaviors are observed for the magnetoconductivity The scaling behavior is determined by either the localization or the electron correlation effects, whichever becomes stronger more rapidly at a given temperature and magnetic field. Qualitative explanations are given for the observed scaling behaviors. A curve of a function of H/T sup 2 sup / sup 3 exists on which all our magnetoconductivity data lie.

  9. Spin relaxation near the metal-insulator transition: dominance of the Dresselhaus spin-orbit coupling.

    Science.gov (United States)

    Intronati, Guido A; Tamborenea, Pablo I; Weinmann, Dietmar; Jalabert, Rodolfo A

    2012-01-06

    We identify the Dresselhaus spin-orbit coupling as the source of the dominant spin-relaxation mechanism in the impurity band of a wide class of n-doped zinc blende semiconductors. The Dresselhaus hopping terms are derived and incorporated into a tight-binding model of impurity sites, and they are shown to unexpectedly dominate the spin relaxation, leading to spin-relaxation times in good agreement with experimental values. This conclusion is drawn from two complementary approaches: an analytical diffusive-evolution calculation and a numerical finite-size scaling study of the spin-relaxation time.

  10. Magnetism and metal-insulator transition in oxygen deficient SrTiO3

    Science.gov (United States)

    Lopez-Bezanilla, Alejandro; Ganesh, P.; Littlewood, Peter

    2015-03-01

    We report new findings in the electronic structure and magnetism of oxygen vacancies in SrTiO3. By means of first-principles calculations we show that the appearance of magnetism in oxygen-deficient SrTiO3 is not determined solely by the presence of a single oxygen vacancy but by the density of free carriers and the relative proximity of the vacant sites. While an isolated vacancy behaves as a non-magnetic double donor, manipulation of the doping conditions allows the stability of a single donor state with emergent local moments. Strong local lattice distortions enhance the binding of this state. Consequently we find that the free-carrier density and strain are fundamental components to obtaining trapped spin-polarized electrons in oxygen-deficient SrTiO3, which may have important implications in the design of switchable magneto-optic devices. AL-B and PBL were supported by DOE-BES under Contract No. DE-AC02-06CH11357. PG was sponsored by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory, managed by UT- Battelle, LLC, for the US Department of Energy.

  11. Crossover of angular dependent magnetoresistance with the metal-insulator transition in colossal magnetoresistive manganite films

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Sun, J.R.; Zhao, T.Y.

    2009-01-01

    The temperature and magnetic field dependence of angular dependent magnetoresistance (AMR) along two orthogonal directions ([100] and [01]) was investigated in a charge-orbital-ordered Sm0.5Ca0.5MnO3 (SCMO) film grown on (011)-oriented SrTiO3 substrates. A dramatic decrease of AMR magnitude in bo...

  12. High-field Overhauser dynamic nuclear polarization in silicon below the metal-insulator transition.

    Science.gov (United States)

    Dementyev, Anatoly E; Cory, David G; Ramanathan, Chandrasekhar

    2011-04-21

    Single crystal silicon is an excellent system to explore dynamic nuclear polarization (DNP), as it exhibits a continuum of properties from metallic to insulating as a function of doping concentration and temperature. At low doping concentrations DNP has been observed to occur via the solid effect, while at very high-doping concentrations an Overhauser mechanism is responsible. Here we report the hyperpolarization of (29)Si in n-doped silicon crystals, with doping concentrations in the range of (1-3) × 10(17) cm(-3). In this regime exchange interactions between donors become extremely important. The sign of the enhancement in our experiments and its frequency dependence suggest that the (29)Si spins are directly polarized by donor electrons via an Overhauser mechanism within exchange-coupled donor clusters. The exchange interaction between donors only needs to be larger than the silicon hyperfine interaction (typically much smaller than the donor hyperfine coupling) to enable this Overhauser mechanism. Nuclear polarization enhancement is observed for a range of donor clusters in which the exchange energy is comparable to the donor hyperfine interaction. The DNP dynamics are characterized by a single exponential time constant that depends on the microwave power, indicating that the Overhauser mechanism is a rate-limiting step. Since only about 2% of the silicon nuclei are located within 1 Bohr radius of the donor electron, nuclear spin diffusion is important in transferring the polarization to all the spins. However, the spin-diffusion time is much shorter than the Overhauser time due to the relatively weak silicon hyperfine coupling strength. In a 2.35 T magnetic field at 1.1 K, we observed a DNP enhancement of 244 ± 84 resulting in a silicon polarization of 10.4 ± 3.4% following 2 h of microwave irradiation.

  13. Materials Characterization and Microelectronic Implementation of Metal-insulator Transition Materials and Phase Change Materials

    Science.gov (United States)

    2015-03-26

    materials like crystalline semiconductors, graphene , and composites, the materials discussed here could have a significant impact. This thesis investigates...diagnosis [124], crystallinity of pharmaceutical materials [125], materials diagnosis for restoration of paintings [126], and materials research [127...temperature dots and paint were placed on samples on the substrate. Temperature dots are typically used in the transportation of goods such as food in order

  14. Reply to ''Comment on 'Metal-insulator transition in random superconducting networks' ''

    International Nuclear Information System (INIS)

    Soukoulis, C.M.; Li, Q.; Grest, G.S.

    1990-01-01

    We address the remarks of Dominguez, Lopez, and Simonin [Phys. Rev.B 42, 8665 (1990); preceding paper] on the determination of the normal-to-superconducting (N-S) phase boundary in randomsuperconducting networks. We refute their claims that the disappearanceof the fine structure of the N-S boundary and the change of the critical exponent k for the slope of the critical field on(p-p c ) are due to the introduction of very weak links between nodes in the superconducting networks

  15. Superconductivity effects near metal-insulator transition in granular idnium films

    International Nuclear Information System (INIS)

    Belevtsev, B.I.; Komnik, Yu.F.; Fomin, A.V.

    1986-01-01

    The influence of granules superconductivity on the electric properties of granular indium films is investigated under the conditions of partial or full granular localization of electrons. At temperatures below 5 K a minimum of electric resistance and negative magnetoresistance are revealed which are attributed to the competition of hopping conductivity and Josephson intergranular tunneling of electrons

  16. Flexible high-κ/Metal gate metal/insulator/metal capacitors on silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-10-01

    Implementation of memory on bendable substrates is an important step toward a complete and fully developed notion of mechanically flexible computational systems. In this paper, we have demonstrated a simple fabrication flow to build metal-insulator-metal capacitors, key components of dynamic random access memory, on a mechanically flexible silicon (100) fabric. We rely on standard microfabrication processes to release a thin sheet of bendable silicon (area: 18 {\\ m cm}2 and thickness: 25 \\\\mu{\\ m m}) in an inexpensive and reliable way. On such platform, we fabricated and characterized the devices showing mechanical robustness (minimum bending radius of 10 mm at an applied strain of 83.33% and nominal strain of 0.125%) and consistent electrical behavior regardless of the applied mechanical stress. Furthermore, and for the first time, we performed a reliability study suggesting no significant difference in performance and showing an improvement in lifetime projections. © 1963-2012 IEEE.

  17. Metal-insulator crossover in superconducting cuprates in strong magnetic fields

    International Nuclear Information System (INIS)

    Marchetti, P.A.; Su Zhaobin; Yu Lu

    2001-02-01

    The metal-insulator crossover of the in-plane resistivity upon temperature decrease, recently observed in several classes of cuprate superconductors, when a strong magnetic field suppresses the superconductivity, is explained using the U(1)xSU(2) Chern-Simons gauge field theory. The origin of this crossover is the same as that for a similar phenomenon observed in heavily underdoped cuprates without magnetic field. It is due to the interplay between the diffusive motion of the charge carriers and the 'peculiar' localization effect due to short-range antiferromagnetic order. We also calculate the in-plane transverse magnetoresistance which is in a fairly good agreement with available experimental data. (author)

  18. Pr-O-Al-N dielectrics for metal insulator semiconductor stacks

    Energy Technology Data Exchange (ETDEWEB)

    Henkel, Karsten; Torche, Mohamed; Sohal, Rakesh; Karavaev, Konstantin; Burkov, Yevgen; Schwiertz, Carola; Schmeisser, Dieter [Brandenburg University of Technology, Chair of Applied Physics and Sensors, K.-Wachsmann-Allee 1, 03046 Cottbus (Germany)

    2011-02-15

    This work focuses on praseodymium oxide films as a high-k material on silicon and silicon carbide (SiC) in metal insulator semiconductor samples. The electrical results are correlated to spectroscopic findings on this material system. Strong interfacial reactions between the praseodymium oxide and the semiconductor as well as silicon inter-diffusion into the high-k material are observed. The importance of a buffer layer is discussed and its optimisation is addressed, too. In particular the improvement of the performance by the introduction of an aluminium oxynitride buffer layer, which acts as an inter-diffusion barrier and reduces the leakage current, the interface state density and the equivalent oxide thickness is demonstrated. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Unified computational model of transport in metal-insulating oxide-metal systems

    Science.gov (United States)

    Tierney, B. D.; Hjalmarson, H. P.; Jacobs-Gedrim, R. B.; Agarwal, Sapan; James, C. D.; Marinella, M. J.

    2018-04-01

    A unified physics-based model of electron transport in metal-insulator-metal (MIM) systems is presented. In this model, transport through metal-oxide interfaces occurs by electron tunneling between the metal electrodes and oxide defect states. Transport in the oxide bulk is dominated by hopping, modeled as a series of tunneling events that alter the electron occupancy of defect states. Electron transport in the oxide conduction band is treated by the drift-diffusion formalism and defect chemistry reactions link all the various transport mechanisms. It is shown that the current-limiting effect of the interface band offsets is a function of the defect vacancy concentration. These results provide insight into the underlying physical mechanisms of leakage currents in oxide-based capacitors and steady-state electron transport in resistive random access memory (ReRAM) MIM devices. Finally, an explanation of ReRAM bipolar switching behavior based on these results is proposed.

  20. Design of nanoring resonators made of metal-insulator-metal nanostrip waveguides

    International Nuclear Information System (INIS)

    Song, Jun-Hwa; Lee, Hyun-Shik; O, Beom-Hoan; Lee, Seung-Gol; Park, Se-Geun; Lee, El-Hang

    2010-01-01

    We report on the design of nanoring resonators made of metal-insulator-metal (MIM) nanostrip waveguides. The characteristics of the lightwave propagation through the silver-based MIM plasmonic waveguides with an air superstrate are examined. The effective refractive indices, the propagation losses, the bending losses, and the beat lengths are analyzed by using 2D and 3D finite element methods (FEMs). For the optimization of the nanoring resonators, we examined the resonant mode power and the Q factor with respect to the width of the MIM nanostrip and the separation between the ring resonator and the straight waveguide. We obtained an optimized nanoring resonator that had submicron diameters (R = 399 nm) and 3 rd -order resonances at a 1550-nm wavelength. These nanoring resonators will play an important role as the basic building blocks for the realization of nanoscale photonic integrated circuits.

  1. A new high-κ Al2O3 based metal-insulator-metal antifuse

    Science.gov (United States)

    Tian, Min; Zhong, Huicai; Li, Li; Wang, Zhigang

    2018-06-01

    In this paper, a new metal-insulator-metal (MIM) antifuse was fabricated with the high κ Al2O3 deposited by atomic layer deposition (ALD) as the dielectric. On this high κ antifuse structure, the very low on-state resistance was obtained under certain programming conditions. It is the first time that the antifuse on-state resistance has been found decreasing along with the increase of dielectric film thickness, which is attributed to a large current overshoot during breakdown. For the device with a dielectric thickness of 12 nm, very large overshoot current (∼60 mA) was observed and extremely low on-state resistance (∼10 Ω) was achieved.

  2. Optical magnetism and plasmonic Fano resonances in metal-insulator-metal oligomers.

    Science.gov (United States)

    Verre, R; Yang, Z J; Shegai, T; Käll, M

    2015-03-11

    The possibility of achieving optical magnetism at visible frequencies using plasmonic nanostructures has recently been a subject of great interest. The concept is based on designing structures that support plasmon modes with electron oscillation patterns that imitate current loops, that is, magnetic dipoles. However, the magnetic resonances are typically spectrally narrow, thereby limiting their applicability in, for example, metamaterial designs. We show that a significantly broader magnetic response can be realized in plasmonic pentamers constructed from metal-insulator-metal (MIM) sandwich particles. Each MIM unit acts as a magnetic meta-atom and the optical magnetism is rendered quasi-broadband through hybridization of the in-plane modes. We demonstrate that scattering spectra of individual MIM pentamers exhibit multiple Fano resonances and a broad subradiant spectral window that signals the magnetic interaction and a hierarchy of coupling effects in these intricate three-dimensional nanoparticle oligomers.

  3. Electric-field Induced Microdynamics of Charged Rods

    Directory of Open Access Journals (Sweden)

    Kyongok eKang

    2014-12-01

    Full Text Available Electric-field induced phase/state transitions are observed in AC electric fields with small amplitudes and low frequencies in suspensions of charged fibrous viruses (fd, which are model systems for highly charged rod-like colloids. Texture- and particle-dynamics in these field-induced states, and on crossing transition lines, are explored by image time-correlation and dynamic light scattering, respectively. At relatively low frequencies, starting from a system within the isotropic-nematic coexistence region, a transition from a nematic to a chiral nematic is observed, as well as a dynamical state where nematic domains melt and reform. These transitions are preliminary due to field-induced dissociation/association of condensed ions. At higher frequencies a uniform state is formed that is stabilized by hydrodynamic interactions through field-induced electro-osmotic flow where the rods align along the field direction. There is a point in the field-amplitude versus frequency plane where various transition lines meet. This point can be identified as a non-equilibrium critical point, in the sense that a length scale and a time scale diverge on approach of that point. The microscopic dynamics exhibits discontinuities on crossing transition lines that were identified independently by means of image and signal correlation spectroscopy.

  4. Chemically Designed Metallic/Insulating Hybrid Nanostructures with Silver Nanocrystals for Highly Sensitive Wearable Pressure Sensors.

    Science.gov (United States)

    Kim, Haneun; Lee, Seung-Wook; Joh, Hyungmok; Seong, Mingi; Lee, Woo Seok; Kang, Min Su; Pyo, Jun Beom; Oh, Soong Ju

    2018-01-10

    With the increase in interest in wearable tactile pressure sensors for e-skin, researches to make nanostructures to achieve high sensitivity have been actively conducted. However, limitations such as complex fabrication processes using expensive equipment still exist. Herein, simple lithography-free techniques to develop pyramid-like metal/insulator hybrid nanostructures utilizing nanocrystals (NCs) are demonstrated. Ligand-exchanged and unexchanged silver NC thin films are used as metallic and insulating components, respectively. The interfaces of each NC layer are chemically engineered to create discontinuous insulating layers, i.e., spacers for improved sensitivity, and eventually to realize fully solution-processed pressure sensors. Device performance analysis with structural, chemical, and electronic characterization and conductive atomic force microscopy study reveals that hybrid nanostructure based pressure sensor shows an enhanced sensitivity of higher than 500 kPa -1 , reliability, and low power consumption with a wide range of pressure sensing. Nano-/micro-hierarchical structures are also designed by combining hybrid nanostructures with conventional microstructures, exhibiting further enhanced sensing range and achieving a record sensitivity of 2.72 × 10 4 kPa -1 . Finally, all-solution-processed pressure sensor arrays with high pixel density, capable of detecting delicate signals with high spatial selectivity much better than the human tactile threshold, are introduced.

  5. Hotspot related plasmon assisted multiphoton photocurrents in metal-insulator-metal junctions

    Energy Technology Data Exchange (ETDEWEB)

    Differt, Dominik; Pfeiffer, Walter [Universitaet Bielefeld, Universitaetsstr. 25, 33615 Bielefeld (Germany); Diesing, Detlef [Universitaet Duisburg-Essen, Universitaetsstr. 5, 45117 Essen (Germany)

    2011-07-01

    Scanning photocurrent microscopy of metal-insulator-metal junctions (MIM) is used to investigate the mechanisms of femtosecond multiphoton photocurrent injection at liquid nitrogen temperature. The locally induced multiphoton photocurrent in a Ag-TaO-Ta MIM junction is measured in a scanning microscope cryostat under focused illumination (5{mu}m focus diameter, 800 nm, 30 fs, 80 MHz repetition rate). The intensity dependence reveals a mixture of two-photon and three-photon processes that are responsible for the photocurrent. Its lateral variation shows hotspot-like behaviour with significant magnitude variations on a 100 to 200 nm length scale. Assuming an injection current duration of 40fs the peak injection current density of about 10{sup 4} A cm{sup -2} is estimated - 10{sup 6} times higher than that for 400 nm continuous wave illumination slightly below the damage threshold. The simultaneously measured extinction of the incident radiation reveals a 20 to 30% increased absorption at the hotspots. We attribute the local photocurrent enhancement to the defect-assisted excitation of surface plasmon polaritons at the silver electrode leading to an enhanced local excitation.

  6. Direct Fabrication of Inkjet-Printed Dielectric Film for Metal-Insulator-Metal Capacitors

    Science.gov (United States)

    Cho, Cheng-Lin; Kao, Hsuan-ling; Wu, Yung-Hsien; Chang, Li-Chun; Cheng, Chun-Hu

    2018-01-01

    In this study, an inkjet-printed dielectric film that used a polymer-based SU-8 ink was fabricated for use in a metal-insulator-metal (MIM) capacitor. Thermal treatment of the inkjet-printed SU-8 polymer film affected its surface morphology, chemical structure, and surface wettability. A 20-min soft-bake at 60°C was applied to eliminate inkjet-printed bubbles and ripples. The ultraviolet-exposed SU-8 polymer film was crosslinked at temperatures between 120°C and 220°C and became disordered at 270°C, demonstrated using Fourier-transform infrared spectroscopy. A maximum SU-8 polymer film hard-bake temperature of 120°C was identified, and a printing process was subsequently employed because the appropriate water contact angle of the printed film was 79°. Under the appropriate inkjet printing conditions, the two-transmission-line method was used to extract the dielectric and electrical properties of the SU-8 polymer film, and the electrical behavior of the fabricated MIM capacitor was also characterized.

  7. Effect of surface states on electrical characteristic of metal - insulator - semiconductor (MIS) diodes

    International Nuclear Information System (INIS)

    Altindal, S.; Doekme, I.; Tataroglu, A.; Sahingoez, R.

    2002-01-01

    The current-voltage (I-V) characteristics of Metal-Insulator-Semiconductor (MIS) Schottky barrier diodes which is consider distribution of interface states in equilibrium with semiconductor were determined at two (low and high) temperature. The interface states were responsible for non-ideal behavior of the forward I-V characteristic of diodes. Both diodes (n and p type Si) showed non-ideal behavior with an ideality factor 1.6 and 1.85 respectively at room temperature. The higher values of n-type Si were attributed to an order of magnitude higher density of interface states in the both diodes. The effect of an interfacial insulator layer between the metal and semiconductor are also studied. The high density of interface states also caused a reduction in the barrier height of the MIS diode. It is shown that by using Norde function at low and high temperature, barrier height □ b , series resistance R s and ideality factor n can be determined even in the case 1 s obtained from Norde function strongly depend on temperature, and decrease with increasing temperature. In addition, the potential barrier height increases with increasing temperature. The mean density of interface states N ss decreases with increasing temperature. Particularly at low temperature the I-V characteristics are controlled by interface states density

  8. Characterization of micro-resonator based on enhanced metal insulator semiconductor capacitor for glucose recognition.

    Science.gov (United States)

    Dhakal, Rajendra; Kim, E S; Jo, Yong-Hwa; Kim, Sung-Soo; Kim, Nam-Young

    2017-03-01

    We present a concept for the characterization of micro-fabricated based resonator incorporating air-bridge metal-insulator-semiconductor (MIS) capacitor to continuously monitor an individual's state of glucose levels based on frequency variation. The investigation revealed that, the micro-resonator based on MIS capacitor holds considerable promise for implementation and recognition as a glucose sensor for human serum. The discrepancy in complex permittivity as a result of enhanced capacitor was achieved for the detection and determination of random glucose concentration levels using a unique variation of capacitor that indeed results in an adequate variation of the resonance frequency. Moreover, the design and development of micro-resonator with enhanced MIS capacitor generate a resolution of 112.38 × 10 -3 pF/mg/dl, minimum detectable glucose level of 7.45mg/dl, and a limit of quantification of 22.58mg/dl. Additionally, this unique approach offers long-term reliability for mediator-free glucose sensing with a relative standard deviation of less than 0.5%. Copyright © 2017 IPEM. Published by Elsevier Ltd. All rights reserved.

  9. Transport properties of metal-metal and metal-insulator heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Fadlallah Elabd, Mohamed Mostafa

    2010-06-09

    In this study we present results of electronic structure and transport calculations for metallic and metal-insulator interfaces, based on density functional theory and the non-equilibrium Green's function method. Starting from the electronic structure of bulk Al, Cu, Ag, and Au interfaces, we study the effects of different kinds of interface roughness on the transmission coefficient (T(E)) and the I-V characteristic. In particular, we compare prototypical interface distortions, including vacancies, metallic impurities, non-metallic impurities, interlayer, and interface alloy. We find that vacancy sites have a huge effect on transmission coefficient. The transmission coefficient of non-metallic impurity systems has the same behaviour as the transmission coefficient of vacancy system, since these systems do not contribute to the electronic states at the Fermi energy. We have also studied the transport properties of Au-MgO-Au tunnel junctions. In particular, we have investigated the influence of the thickness of the MgO interlayer, the interface termination, the interface spacing, and O vacancies. Additional interface states appear in the O-terminated configuration due to the formation of Au-O bonds. An increasing interface spacing suppresses the Au-O bonding. Enhancement of T(E) depends on the position and density of the vacancies (the number of vacancies per unit cell). (orig.)

  10. Systematic study of metal-insulator-metal diodes with a native oxide

    Science.gov (United States)

    Donchev, E.; Gammon, P. M.; Pang, J. S.; Petrov, P. K.; Alford, N. McN.

    2014-10-01

    In this paper, a systematic analysis of native oxides within a Metal-Insulator-Metal (MIM) diode is carried out, with the goal of determining their practicality for incorporation into a nanoscale Rectenna (Rectifying Antenna). The requirement of having a sub-10nm oxide scale is met by using the native oxide, which forms on most metals exposed to an oxygen containing environment. This, therefore, provides a simplified MIM fabrication process as the complex, controlled oxide deposition step is omitted. We shall present the results of an investigation into the current-voltage characteristics of various MIM combinations that incorporate a native oxide, in order to establish whether the native oxide is of sufficient quality for good diode operation. The thin native oxide layers are formed by room temperature oxidation of the first metal layer, deposited by magnetron sputtering. This is done in-situ, within the deposition chamber before depositing the second metal electrode. Using these structures, we study the established trend where the bigger the difference in metal workfunctions, the better the rectification properties of MIM structures, and hence the selection of the second metal is key to controlling the device's rectifying properties. We show how leakage current paths through the non-optimised native oxide control the net current-voltage response of the MIM devices. Furthermore, we will present the so-called diode figures of merit (asymmetry, non-linearity and responsivity) for each of the best performing structures.

  11. Design and fabrication of metal-insulator-metal diode for high frequency applications

    Science.gov (United States)

    Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

    2017-02-01

    Metal-insulator-metal (MIM) diodes play significant role in high speed electronics where high frequency rectification is needed. Quantum based tunneling mechanism helps MIM diodes to rectify at high frequency signals. Rectenna, antenna coupled MIM diodes are becoming popular due to their potential use as IR detectors and energy harvesters. Because of small active area, MIM diodes could easily be incorporated into integrated circuits (IC's). The objective of the work is to design and develop MIM diodes for high frequency rectification. In this work, thin insulating layer of ZnO was fabricated using Langmuir-Blodgett (LB) technique which facilitates ultrathin thin, uniform and pinhole free fabrication of insulating layer. The ZnO layer was synthesized from organic precursor of zinc acetate layer. The optimization in the LB technique of fabrication process led to fabricate MIM diodes with high non-linearity and sensitivity. Moreover, the top and bottom electrodes as well as active area of the diodes were patterned using UV-tunneling conduction mechanism. The highest sensitivity of the diode was measured around 37 (A/W), and the rectification ratio was found around 36 under low applied bias at +/-100 mV.

  12. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry

    Science.gov (United States)

    Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

    2016-05-01

    Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows.

  13. Tunneling conductance oscillations in spin-orbit coupled metal-insulator-superconductor junctions

    Science.gov (United States)

    Kapri, Priyadarshini; Basu, Saurabh

    2018-01-01

    The tunneling conductance for a device consisting of a metal-insulator-superconductor (MIS) junction is studied in presence of Rashba spin-orbit coupling (RSOC) via an extended Blonder-Tinkham-Klapwijk formalism. We find that the tunneling conductance as a function of an effective barrier potential that defines the insulating layer and lies intermediate to the metallic and superconducting electrodes, displays an oscillatory behavior. The tunneling conductance shows high sensitivity to the RSOC for certain ranges of this potential, while it is insensitive to the RSOC for others. Additionally, when the period of oscillations is an odd multiple of a certain value of the effective potential, the conductance spectrum as a function of the biasing energy demonstrates a contrasting trend with RSOC, compared to when it is not an odd multiple. The explanations for the observation can be found in terms of a competition between the normal and Andreev reflections. Similar oscillatory behavior of the conductance spectrum is also seen for other superconducting pairing symmetries, thereby emphasizing that the insulating layer plays a decisive role in the conductance oscillations of a MIS junction. For a tunable Rashba coupling, the current flowing through the junction can be controlled with precision.

  14. Electrostatic analysis of n-doped SrTiO3 metal-insulator-semiconductor systems

    International Nuclear Information System (INIS)

    Kamerbeek, A. M.; Banerjee, T.; Hueting, R. J. E.

    2015-01-01

    Electron doped SrTiO 3 , a complex-oxide semiconductor, possesses novel electronic properties due to its strong temperature and electric-field dependent permittivity. Due to the high permittivity, metal/n-SrTiO 3 systems show reasonably strong rectification even when SrTiO 3 is degenerately doped. Our experiments show that the insertion of a sub nanometer layer of AlO x in between the metal and n-SrTiO 3 interface leads to a dramatic reduction of the Schottky barrier height (from around 0.90 V to 0.25 V). This reduces the interface resistivity by 4 orders of magnitude. The derived electrostatic analysis of the metal-insulator-semiconductor (n-SrTiO 3 ) system is consistent with this trend. When compared with a Si based MIS system, the change is much larger and mainly governed by the high permittivity of SrTiO 3 . The non-linear permittivity of n-SrTiO 3 leads to unconventional properties such as a temperature dependent surface potential non-existent for semiconductors with linear permittivity such as Si. This allows tuning of the interfacial band alignment, and consequently the Schottky barrier height, in a much more drastic way than in conventional semiconductors

  15. Low dielectric constant-based organic field-effect transistors and metal-insulator-semiconductor capacitors

    Science.gov (United States)

    Ukah, Ndubuisi Benjamin

    This thesis describes a study of PFB and pentacene-based organic field-effect transistors (OFET) and metal-insulator-semiconductor (MIS) capacitors with low dielectric constant (k) poly(methyl methacrylate) (PMMA), poly(4-vinyl phenol) (PVP) and cross-linked PVP (c-PVP) gate dielectrics. A physical method -- matrix assisted pulsed laser evaporation (MAPLE) -- of fabricating all-polymer field-effect transistors and MIS capacitors that circumvents inherent polymer dissolution and solvent-selectivity problems, is demonstrated. Pentacene-based OFETs incorporating PMMA and PVP gate dielectrics usually have high operating voltages related to the thickness of the dielectric layer. Reduced PMMA layer thickness (≤ 70 nm) was obtained by dissolving the PMMA in propylene carbonate (PC). The resulting pentacene-based transistors exhibited very low operating voltage (below -3 V), minimal hysteresis in their transfer characteristics, and decent electrical performance. Also low voltage (within -2 V) operation using thin (≤ 80 nm) low-k and hydrophilic PVP and c-PVP dielectric layers obtained via dissolution in high dipole moment and high-k solvents -- PC and dimethyl sulfoxide (DMSO), is demonstrated to be a robust means of achieving improved electrical characteristics and high operational stability in OFETs incorporating PVP and c-PVP dielectrics.

  16. Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor

    Energy Technology Data Exchange (ETDEWEB)

    Liu, J. W., E-mail: liu.jiangwei@nims.go.jp [International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Liao, M. Y.; Imura, M. [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Watanabe, E.; Oosato, H. [Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Koide, Y., E-mail: koide.yasuo@nims.go.jp [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Center of Materials Research for Low Carbon Emission, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2014-08-25

    A diamond logic inverter is demonstrated using an enhancement-mode hydrogenated-diamond metal-insulator-semiconductor field effect transistor (MISFET) coupled with a load resistor. The gate insulator has a bilayer structure of a sputtering-deposited LaAlO{sub 3} layer and a thin atomic-layer-deposited Al{sub 2}O{sub 3} buffer layer. The source-drain current maximum, extrinsic transconductance, and threshold voltage of the MISFET are measured to be −40.7 mA·mm{sup −1}, 13.2 ± 0.1 mS·mm{sup −1}, and −3.1 ± 0.1 V, respectively. The logic inverters show distinct inversion (NOT-gate) characteristics for input voltages ranging from 4.0 to −10.0 V. With increasing the load resistance, the gain of the logic inverter increases from 5.6 to as large as 19.4. The pulse response against the high and low input voltages shows the inversion response with the low and high output voltages.

  17. Thin-film composite materials as a dielectric layer for flexible metal-insulator-metal capacitors.

    Science.gov (United States)

    Tiwari, Jitendra N; Meena, Jagan Singh; Wu, Chung-Shu; Tiwari, Rajanish N; Chu, Min-Ching; Chang, Feng-Chih; Ko, Fu-Hsiang

    2010-09-24

    A new organic-organic nanoscale composite thin-film (NCTF) dielectric has been synthesized by solution deposition of 1-bromoadamantane and triblock copolymer (Pluronic P123, BASF, EO20-PO70-EO20), in which the precursor solution has been achieved with organic additives. We have used a sol-gel process to make a metal-insulator-metal capacitor (MIM) comprising a nanoscale (10 nm-thick) thin-film on a flexible polyimide (PI) substrate at room temperature. Scanning electron microscope and atomic force microscope revealed that the deposited NCTFs were crack-free, uniform, highly resistant to moisture absorption, and well adhered on the Au-Cr/PI. The electrical properties of 1-bromoadamantane-P123 NCTF were characterized by dielectric constant, capacitance, and leakage current measurements. The 1-bromoadamantane-P123 NCTF on the PI substrate showed a low leakage current density of 5.5 x 10(-11) A cm(-2) and good capacitance of 2.4 fF at 1 MHz. In addition, the calculated dielectric constant of 1-bromoadamantane-P123 NCTF was 1.9, making them suitable candidates for use in future flexible electronic devices as a stable intermetal dielectric. The electrical insulating properties of 1-bromoadamantane-P123 NCTF have been improved due to the optimized dipole moments of the van der Waals interactions.

  18. Controlled thermoelectric response of a tunable Rashba coupled metal-insulator-superconductor junction

    Science.gov (United States)

    Kapri, Priyadarshini; Adhikary, Priyanka; Sinha, Shubham; Basu, Saurabh

    2018-05-01

    Thermoelectric effect for metal, insulator and the superconductor junctions has been studied with Rashba spin-orbit coupling (RSOC) being present at the interfaces via modified Blonder-Tinkham-Klapwijk (BTK) theory. We find that the thermopower, as a function of an effective barrier potential that characterizes the intermediate insulating layer, displays an oscillatory behavior. Interesting interplay between the strength of RSOC and the effective barrier potential has been carried out in details in this regard. For specific ranges of the effective barrier potential, RSOC enhances the thermopower, while the reverse happens for other values. Moreover it is found that the effective barrier potential plays a crucial role in determining the thermopower spectrum. For a tunable Rashba coupling, the thermopower of the junction can be controlled with precision, which may useful for the thermoelectric applications, at low temperatures. Further the efficiency of the system is obtained for different pairing correlations of the superconducting lead where we find that the system with a d-wave symmetry is more efficient as compared to a s-wave correlation, in some selective regions of effective barrier potential. It is found that for some selective regions of effective barrier potential, the efficiency of the system increases with RSOC and the opposite happens for other values.

  19. Systematic study of metal-insulator-metal diodes with a native oxide

    KAUST Repository

    Donchev, E.

    2014-10-07

    © 2014 SPIE. In this paper, a systematic analysis of native oxides within a Metal-Insulator-Metal (MIM) diode is carried out, with the goal of determining their practicality for incorporation into a nanoscale Rectenna (Rectifying Antenna). The requirement of having a sub-10nm oxide scale is met by using the native oxide, which forms on most metals exposed to an oxygen containing environment. This, therefore, provides a simplified MIM fabrication process as the complex, controlled oxide deposition step is omitted. We shall present the results of an investigation into the current-voltage characteristics of various MIM combinations that incorporate a native oxide, in order to establish whether the native oxide is of sufficient quality for good diode operation. The thin native oxide layers are formed by room temperature oxidation of the first metal layer, deposited by magnetron sputtering. This is done in-situ, within the deposition chamber before depositing the second metal electrode. Using these structures, we study the established trend where the bigger the difference in metal workfunctions, the better the rectification properties of MIM structures, and hence the selection of the second metal is key to controlling the device\\'s rectifying properties. We show how leakage current paths through the non-optimised native oxide control the net current-voltage response of the MIM devices. Furthermore, we will present the so-called diode figures of merit (asymmetry, non-linearity and responsivity) for each of the best performing structures.

  20. Preparation and dielectric investigation of organic metal insulator semiconductor (MIS) structures with a ferroelectric polymer

    Energy Technology Data Exchange (ETDEWEB)

    Kalbitz, Rene; Fruebing, Peter; Gerhard, Reimund [Department of Physics and Astronomy, University of Potsdam (Germany); Taylor, Martin [School of Electronic Engineering, Bangor University (United Kingdom)

    2010-07-01

    Ferroelectric field effect transistors (FeFETs) offer the prospect of an organic-based memory device. Since the charge transport in the semiconductor is confined to the interface region between the insulator and the semiconductor, the focus of the present study was on the investigation of this region in metal-insulator-semiconductor (MIS) capacitors using dielectric spectroscopy. Capacitance-Voltage (C-V) measurements at different frequencies as well as capacitance-frequency (C-f) measurements after applying different poling voltages were carried out. The C-V measurements yielded information about the frequency dependence of the depletion layer width as well as the number of charges stored at the semiconductor/ insulator interface. The results are compared to numerical calculations based on a model introduced by S. L. Miller (JAP, 72(12), 1992). The C-f measurements revealed three main relaxation processes. An equivalent circuit has been developed to model the frequency response of the MIS capacitor. With this model the origin of the three relaxations may be deduced.

  1. Simulated electron affinity tuning in metal-insulator-metal (MIM) diodes

    Science.gov (United States)

    Mistry, Kissan; Yavuz, Mustafa; Musselman, Kevin P.

    2017-05-01

    Metal-insulator-metal diodes for rectification applications must exhibit high asymmetry, nonlinearity, and responsivity. Traditional methods of improving these figures of merit have consisted of increasing insulator thickness, adding multiple insulator layers, and utilizing a variety of metal contact combinations. However, these methods have come with the price of increasing the diode resistance and ultimately limiting the operating frequency to well below the terahertz regime. In this work, an Airy Function Transfer Matrix simulation method was used to observe the effect of tuning the electron affinity of the insulator as a technique to decrease the diode resistance. It was shown that a small increase in electron affinity can result in a resistance decrease in upwards of five orders of magnitude, corresponding to an increase in operating frequency on the same order. Electron affinity tuning has a minimal effect on the diode figures of merit, where asymmetry improves or remains unaffected and slight decreases in nonlinearity and responsivity are likely to be greatly outweighed by the improved operating frequency of the diode.

  2. Infrared-transmittance tunable metal-insulator conversion device with thin-film-transistor-type structure on a glass substrate

    Directory of Open Access Journals (Sweden)

    Takayoshi Katase

    2017-05-01

    Full Text Available Infrared (IR transmittance tunable metal-insulator conversion was demonstrated on a glass substrate by using thermochromic vanadium dioxide (VO2 as the active layer in a three-terminal thin-film-transistor-type device with water-infiltrated glass as the gate insulator. Alternative positive/negative gate-voltage applications induce the reversible protonation/deprotonation of a VO2 channel, and two-orders of magnitude modulation of sheet-resistance and 49% modulation of IR-transmittance were simultaneously demonstrated at room temperature by the metal-insulator phase conversion of VO2 in a non-volatile manner. The present device is operable by the room-temperature protonation in an all-solid-state structure, and thus it will provide a new gateway to future energy-saving technology as an advanced smart window.

  3. Experimental and modeling study of the capacitance-voltage characteristics of metal-insulator-semiconductor capacitor based on pentacene/parylene

    KAUST Repository

    Wondmagegn, Wudyalew T.; Satyala, Nikhil T.; Mejia, Israel I.; Mao, Duo; Gowrisanker, Srinivas; Alshareef, Husam N.; Stiegler, Harvey J.; Quevedo-Ló pez, Manuel Angel Quevedo; Pieper, Ron J.; Gnade, Bruce E.

    2011-01-01

    The capacitance-voltage (C-V) characteristics of metal-insulator- semiconductor (MIS) capacitors consisting of pentacene as an organic semiconductor and parylene as the dielectric have been investigated by experimental, analytical, and numerical

  4. Metal-insulator-metal diodes with sub-nanometre surface roughness for energy-harvesting applications

    KAUST Repository

    Khan, A.A.; Jayaswal, Gaurav; Gahaffar, F.A.; Shamim, Atif

    2017-01-01

    For ambient radio-frequency (RF) energy harvesting, the available power levels are quite low, and it is highly desirable that the rectifying diodes do not consume any power at all. Contrary to semiconducting diodes, a tunnelling diode – also known as a metal-insulator-metal (MIM) diode – can provide zero-bias rectification, provided the two metals have different work functions. This could result in a complete passive rectenna system. Despite great potential, MIM diodes have not been investigated much in the GHz-frequency regime due to challenging nano-fabrication requirements. In this work, we investigate zero-bias MIM diodes for RF energy-harvesting applications. We studied the surface roughness issue for the bottom metal of the MIM diode for various deposition techniques such as sputtering, atomic layer deposition (ALD) and electron-beam (e-beam) evaporation for crystalline metals as well as for an amorphous alloy, namely ZrCuAlNi. A surface roughness of sub-1nm has been achieved for both the crystalline metals as well as the amorphous alloy, which is vital for the reliable operation of the MIM diode. An MIM diode comprising of a Ti-ZnO-Pt combination yields a zero-bias responsivity of 0.25V−1 and a dynamic resistance of 1200Ω. Complete RF characterisation has been performed by integrating the MIM diode with a coplanar waveguide transmission line. The input impedance varies from 100Ω to 50Ω in the frequency range of between 2GHz and 10GHz, which can be easily matched to typical antenna impedances in this frequency range. Finally, a rectified DC voltage of 4.7mV is obtained for an incoming RF power of 0.4W at zero bias. These preliminary results of zero-bias rectification indicate that complete, passive rectennas (a rectifier and antenna combination) are feasible with further optimisation of MIM devices.

  5. Metal-insulator-metal diodes with sub-nanometre surface roughness for energy-harvesting applications

    KAUST Repository

    Khan, A.A.

    2017-07-27

    For ambient radio-frequency (RF) energy harvesting, the available power levels are quite low, and it is highly desirable that the rectifying diodes do not consume any power at all. Contrary to semiconducting diodes, a tunnelling diode – also known as a metal-insulator-metal (MIM) diode – can provide zero-bias rectification, provided the two metals have different work functions. This could result in a complete passive rectenna system. Despite great potential, MIM diodes have not been investigated much in the GHz-frequency regime due to challenging nano-fabrication requirements. In this work, we investigate zero-bias MIM diodes for RF energy-harvesting applications. We studied the surface roughness issue for the bottom metal of the MIM diode for various deposition techniques such as sputtering, atomic layer deposition (ALD) and electron-beam (e-beam) evaporation for crystalline metals as well as for an amorphous alloy, namely ZrCuAlNi. A surface roughness of sub-1nm has been achieved for both the crystalline metals as well as the amorphous alloy, which is vital for the reliable operation of the MIM diode. An MIM diode comprising of a Ti-ZnO-Pt combination yields a zero-bias responsivity of 0.25V−1 and a dynamic resistance of 1200Ω. Complete RF characterisation has been performed by integrating the MIM diode with a coplanar waveguide transmission line. The input impedance varies from 100Ω to 50Ω in the frequency range of between 2GHz and 10GHz, which can be easily matched to typical antenna impedances in this frequency range. Finally, a rectified DC voltage of 4.7mV is obtained for an incoming RF power of 0.4W at zero bias. These preliminary results of zero-bias rectification indicate that complete, passive rectennas (a rectifier and antenna combination) are feasible with further optimisation of MIM devices.

  6. Magnetic field induced dynamical chaos.

    Science.gov (United States)

    Ray, Somrita; Baura, Alendu; Bag, Bidhan Chandra

    2013-12-01

    In this article, we have studied the dynamics of a particle having charge in the presence of a magnetic field. The motion of the particle is confined in the x-y plane under a two dimensional nonlinear potential. We have shown that constant magnetic field induced dynamical chaos is possible even for a force which is derived from a simple potential. For a given strength of the magnetic field, initial position, and velocity of the particle, the dynamics may be regular, but it may become chaotic when the field is time dependent. Chaotic dynamics is very often if the field is time dependent. Origin of chaos has been explored using the Hamiltonian function of the dynamics in terms of action and angle variables. Applicability of the present study has been discussed with a few examples.

  7. A comparative study of magnetic field induced meta-magnetic transition in nanocrystalline and bulk Pr{sub 0.65}(Ca{sub 0.7}Sr{sub 0.3}){sub 0.35}MnO{sub 3} compound

    Energy Technology Data Exchange (ETDEWEB)

    Saha, Suvayan [CMP Division, Saha Institute of Nuclear Physics, 1/AF, Bidhannagar, Kolkata 700 064 (India); Center for Research in Nanoscience and Nanotechnology, University of Calcutta, JD-2, Salt Lake City, Kolkata 700098, West Bengal (India); Department of Physics, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); Das, Kalipada, E-mail: kalipadadasphysics@gmail.com [Department of Materials Science, Indian Association for the Cultivation of Science, 2A and 2B Raja S.C. Mullick Road, Jadavpur, Kolkata 700032 (India); Bandyopadhyay, Sudipta [Center for Research in Nanoscience and Nanotechnology, University of Calcutta, JD-2, Salt Lake City, Kolkata 700098, West Bengal (India); Department of Physics, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); Das, I. [CMP Division, Saha Institute of Nuclear Physics, 1/AF, Bidhannagar, Kolkata 700 064 (India)

    2017-06-15

    Highlights: • Field induced sharp meta-magnetic transition appears even in nanocrystalline sample. • Magnetic field for the meta-magnetic transition enhances depending upon the cooling field. • This unusual behavior is addressed by the effect of the interfacial strains. - Abstract: In our present study we highlight the observations of external magnetic field induced sharp meta-magnetic transition in polycrystalline bulk as well as nanocrystalline form of Pr{sub 0.65}(Ca{sub 0.7}Sr{sub 0.7}){sub 0.35}MnO{sub 3} compound. Interestingly, such behavior persists in the nanoparticles regardless of the disorder broadened transition. However, higher magnetic field is required for nanoparticles having average particle size ∼40 nm for such meta-magnetic transition, which differs from the general trends of the pure charge ordered nano materials. The interfacial strain between the different magnetic domains plays the important role in magnetic isothermal properties of nanoparticles, when the samples are cooled down in different cooling field. Additionally, both the bulk and nanoparticle compounds exhibit spontaneous phase separation and significantly large magnetoresistance at the low temperature region due to the melting of charge ordered fraction.

  8. Plasmonic reflectors and high-Q nano-cavities based on coupled metal-insulator-metal waveguides

    Directory of Open Access Journals (Sweden)

    Jing Chen

    2012-03-01

    Full Text Available Based on the contra-directional coupling, a composite structure consisting of two coupled metal-insulator-metal (MIM waveguides is proposed to act as an attractive plasmonic reflector. By introducing a defect into one of the MIM waveguides, we show that such a composite structure can be operated as a plasmonic nanocavity with a high quality factor. Both symmetric and anti-symmetric cavity modes are supported in the plasmonic cavity, and their resonance frequencies can be tuned by controlling the defect width. The present structures could have a significant impact for potential applications such as surface plasmon mirrors, filters and solid-state cavity quantum electrodynamics.

  9. Low leakage stoichiometric SrTiO{sub 3} dielectric for advanced metal-insulator-metal capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Popovici, Mihaela; Kaczer, Ben; Redolfi, Augusto; Elshocht, Sven van; Jurczak, Malgorzata [imec Belgium, Leuven (Belgium); Afanas' ev, Valeri V. [Department of Physics and Astronomy, KU Leuven (Belgium); Sereni, Gabriele [DISMI, Universita degli Studi di Modena e Reggio Emilia, (Italy); Larcher, Luca [DISMI, Universita degli Studi di Modena e Reggio Emilia, (Italy); MDLab, Saint Christophe (Italy)

    2016-05-15

    Metal-insulator-metal capacitors (MIMCAP) with stoichiometric SrTiO{sub 3} dielectric were deposited stacking two strontium titanate (STO) layers, followed by intermixing the grain determining Sr-rich STO seed layer, with the Ti-rich STO top layer. The resulted stoichiometric SrTiO{sub 3} would have a structure with less defects as demonstrated by internal photoemission experiments. Consequently, the leakage current density is lower compared to Sr-rich STO which allow further equivalent oxide thickness downscaling. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Bipolar resistive switching in graphene oxide based metal insulator metal structure for non-volatile memory applications

    Science.gov (United States)

    Singh, Rakesh; Kumar, Ravi; Kumar, Anil; Kashyap, Rajesh; Kumar, Mukesh; Kumar, Dinesh

    2018-05-01

    Graphene oxide based devices have attracted much attention recently because of their possible application in next generation electronic devices. In this study, bipolar resistive switching characteristics of graphene oxide based metal insulator metal structure were investigated for nonvolatile memories. The graphene oxide was prepared by the conventional Hummer's method and deposited on ITO coated glass by spin-coating technique. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament inside the graphene oxide. The conduction mechanism for low and high resistance states are dominated by two mechanism the ohmic conduction and space charge limited current (SCLC) mechanism, respectively. Atomic Force Microscopy, X-ray diffraction, Cyclic-Voltammetry were conducted to observe the morphology, structure and behavior of the material. The fabricated device with Al/GO/ITO structure exhibited reliable bipolar resistive switching with set & reset voltage of -2.3 V and 3V respectively.

  11. Evaluation of slot-to-slot coupling between dielectric slot waveguides and metal-insulator-metal slot waveguides.

    Science.gov (United States)

    Kong, Deqing; Tsubokawa, Makoto

    2015-07-27

    We numerically analyzed the power-coupling characteristics between a high-index-contrast dielectric slot waveguide and a metal-insulator-metal (MIM) plasmonic slot waveguide as functions of structural parameters. Couplings due mainly to the transfer of evanescent components in two waveguides generated high transmission efficiencies of 62% when the slot widths of the two waveguides were the same and 73% when the waveguides were optimized by slightly different widths. The maximum transmission efficiency in the slot-to-slot coupling was about 10% higher than that in the coupling between a normal slab waveguide and an MIM waveguide. Large alignment tolerance of the slot-to-slot coupling was also proved. Moreover, a small gap inserted into the interface between two waveguides effectively enhances the transmission efficiency, as in the case of couplings between a normal slab waveguide and an MIM waveguide. In addition, couplings with very wideband transmissions over a wavelength region of a few hundred nanometers were validated.

  12. Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

    International Nuclear Information System (INIS)

    Galatage, R. V.; Zhernokletov, D. M.; Dong, H.; Brennan, B.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M.

    2014-01-01

    The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.

  13. Measuring the lateral charge-carrier mobility in metal-insulator-semiconductor capacitors via Kelvin-probe.

    Science.gov (United States)

    Milotti, Valeria; Pietsch, Manuel; Strunk, Karl-Philipp; Melzer, Christian

    2018-01-01

    We report a Kelvin-probe method to investigate the lateral charge-transport properties of semiconductors, most notably the charge-carrier mobility. The method is based on successive charging and discharging of a pre-biased metal-insulator-semiconductor stack by an alternating voltage applied to one edge of a laterally confined semiconductor layer. The charge carriers spreading along the insulator-semiconductor interface are directly measured by a Kelvin-probe, following the time evolution of the surface potential. A model is presented, describing the device response for arbitrary applied biases allowing the extraction of the lateral charge-carrier mobility from experimentally measured surface potentials. The method is tested using the organic semiconductor poly(3-hexylthiophene), and the extracted mobilities are validated through current voltage measurements on respective field-effect transistors. Our widely applicable approach enables robust measurements of the lateral charge-carrier mobility in semiconductors with weak impact from the utilized contact materials.

  14. Measuring the lateral charge-carrier mobility in metal-insulator-semiconductor capacitors via Kelvin-probe

    Science.gov (United States)

    Milotti, Valeria; Pietsch, Manuel; Strunk, Karl-Philipp; Melzer, Christian

    2018-01-01

    We report a Kelvin-probe method to investigate the lateral charge-transport properties of semiconductors, most notably the charge-carrier mobility. The method is based on successive charging and discharging of a pre-biased metal-insulator-semiconductor stack by an alternating voltage applied to one edge of a laterally confined semiconductor layer. The charge carriers spreading along the insulator-semiconductor interface are directly measured by a Kelvin-probe, following the time evolution of the surface potential. A model is presented, describing the device response for arbitrary applied biases allowing the extraction of the lateral charge-carrier mobility from experimentally measured surface potentials. The method is tested using the organic semiconductor poly(3-hexylthiophene), and the extracted mobilities are validated through current voltage measurements on respective field-effect transistors. Our widely applicable approach enables robust measurements of the lateral charge-carrier mobility in semiconductors with weak impact from the utilized contact materials.

  15. Photo-response of a P3HT:PCBM blend in metal-insulator-semiconductor capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Devynck, M.; Rostirolla, B.; Watson, C. P.; Taylor, D. M., E-mail: d.m.taylor@bangor.ac.uk [School of Electronic Engineering, Bangor University, Dean Street, Bangor, Gwynedd LL57 1UT (United Kingdom)

    2014-11-03

    Metal-insulator-semiconductor capacitors are investigated, in which the insulator is cross-linked polyvinylphenol and the active layer a blend of poly(3-hexylthiophene), P3HT, and the electron acceptor [6,6]-phenyl-C{sub 61}-butyric acid methyl ester (PCBM). Admittance spectra and capacitance-voltage measurements obtained in the dark both display similar behaviour to those previously observed in P3HT-only devices. However, the photo-capacitance response is significantly enhanced in the P3HT:PCBM case, where exciton dissociation leads to electron transfer into the PCBM component. The results are consistent with a network of PCBM aggregates that is continuous through the film but with no lateral interconnection between the aggregates at or near the blend/insulator interface.

  16. Fingerprints of field-induced Berezinskii–Kosterlitz–Thouless transition in quasi-two-dimensional S=1/2 Heisenberg magnets Cu(en)(H{sub 2}O){sub 2}SO{sub 4} and Cu(tn)Cl{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Baranová, Lucia [Civil Engineering Faculty, Department of Applied Mathematics, Technical University of Košice, Vysokoškolská 4 SK-042 00, Košice (Slovakia); Orendáčová, Alžbeta, E-mail: alzbeta.orendacova@upjs.sk [Center of Low Temperature Physics, Faculty of Science, P. J. Šafárik University, Park Angelinum 9 SK-041 54, Košice (Slovakia); Čižmár, Erik [Center of Low Temperature Physics, Faculty of Science, P. J. Šafárik University, Park Angelinum 9 SK-041 54, Košice (Slovakia); Tarasenko, Róbert; Tkáč, Vladimír [Center of Low Temperature Physics, Faculty of Science, P. J. Šafárik University, Park Angelinum 9 SK-041 54, Košice (Slovakia); Charles University, Faculty of Mathematics and Physics, Ke Karlovu 5 12116, Prague (Czech Republic); Orendáč, Martin; Feher, Alexander [Center of Low Temperature Physics, Faculty of Science, P. J. Šafárik University, Park Angelinum 9 SK-041 54, Košice (Slovakia)

    2016-04-15

    Organo-metallic compounds Cu(en)(H{sub 2}O){sub 2}SO{sub 4} (en=C{sub 2}H{sub 8}N{sub 2}) and Cu(tn)Cl{sub 2} (tn=C{sub 3}H{sub 10}N{sub 2}) representing S=1/2 quasi-two-dimensional Heisenberg antiferromagnets with an effective intra-layer exchange coupling J/k{sub B}≈3 K, have been examined by specific heat measurements at temperatures down to nominally 50 mK and magnetic fields up to 14 T. A comparative analysis of magnetic specific heat in zero magnetic field revealed nearly identical contribution of short-range magnetic correlations and significant differences were observed at lowest temperatures. A phase transition to long-range order was observed in Cu(en)(H{sub 2}O){sub 2}SO{sub 4} at T{sub C}=0.9 K while hidden in Cu(tn)Cl{sub 2}. A response of both compounds to the application of magnetic field has rather universal features characteristic for a field-induced Berezinskii–Kosterlitz–Thouless transition theoretically predicted for ideal two-dimensional magnets. - Highlights: • Magnetic specific heat of Cu(en)(H{sub 2}O){sub 2}SO{sub 4} (1) and Cu(tn)Cl{sub 2} (2) was analysed. • In zero magnetic field, (1) and (2) behave as quasi-two-dimensional magnets. • We observed universal thermodynamic response of (1) and (2) to applied field. • Features of field-induced Berezinskii–Kosterlitz–Thouless transition were detected.

  17. Glass-like and Verwey transitions in magnetite in details

    Czech Academy of Sciences Publication Activity Database

    Janů, Zdeněk; Hadač, J.; Švindrych, Z.

    2007-01-01

    Roč. 310, - (2007), e203-e205 ISSN 0304-8853 Institutional research plan: CEZ:AV0Z10100520 Keywords : metal-insulator transition s and other electronic transition s * spin glass es and other random magnets * dynamic properties Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.704, year: 2007

  18. Demonstration of soft x-ray amplification by optical-field-induced ionization

    International Nuclear Information System (INIS)

    Midorikawa, Katsumi; Nagata, Yutaka; Kubodera, Shoichi; Obara, Minoru; Tashiro, Hideo; Toyoda, Koichi

    1995-01-01

    We have demonstrated the amplification of the 13.5-nm Lyman-α transition in hydrogen-like Li + ions, using a novel optical-field-induced ionization. A small-signal gain coefficient of 20 cm -1 was obtained. The use of preformed Li + plasma as an initial laser medium plays important roles for the production of suitable plasma conditions for an optical-field-induced ionization x-ray laser. (author)

  19. Characterization of Metal-Insulator-Transition (MIT) Phase Change Materials (PCM) for Reconfigurable Components, Circuits, and Systems

    Science.gov (United States)

    2013-03-01

    material, the thin film may be showing a plastic response. Table 2 shows the Young’s modulus of an amorphous GeTe witness sample at a variety of...Nanoelectronics (RSM), Serdang, Malaysia , 2011. [19] K. Van Caekenberghe, "RF MEMS on the radar," IEEE Microwave Magazine, vol. 10, no. 6, pp. 99-116

  20. Boundary critical phenomena and a quasiparticle-quasihole symmetric metal-insulator: transition in a constricted quantum hall circuit

    International Nuclear Information System (INIS)

    Lal, Siddhartha

    2007-09-01

    Motivated by surprises in recent experimental findings, we study transport in a model of a quantum Hall edge system with a gate-voltage controlled constriction. A finite backscattered current at finite edge-bias is explained as arising from the splitting of edge current caused by the difference in the filling fractions of the bulk (ν 1 ) and constriction (ν 2 ) quantum Hall fluid regions. We develop a hydrodynamic theory for bosonic edge modes inspired by this model. The constriction region splits the incident long-wavelength chiral edge density-wave excitations among the transmitting and reflecting edge states encircling it. The competition between two interedge tunneling processes taking place inside the constriction, related by a quasiparticle-quasihole (qp-qh) symmetry, is accounted for by computing the boundary theories of the system. This competition is found to determine the strong coupling configuration of the system. A separatrix of qp-qh symmetric gapless critical states is found to lie between the relevant RG flows to a metallic and an insulating configuration of the constriction system. This constitutes an interesting generalisation of the Kane-Fisher quantum impurity model. The features of the RG phase diagram are also confirmed by computing various correlators and chiral linear conductances of the system. In this way, our results find excellent agreement with many recent puzzling experimental results for the cases of ν 1 = 1/3, 1. We also discuss and make predictions for the case of a constriction system with ν 2 = 5/2. (author)

  1. Disorder-driven metal-insulator-transition assisted by interband Coulomb repulsion in a surface transfer doped electron system

    Science.gov (United States)

    Francisco Sánchez-Royo, Juan

    2012-12-01

    The two-dimensional conducting properties of the Si(111) \\sqrt {3} \\times \\sqrt {3} surface doped by the charge surface transfer mechanism have been calculated in the frame of a semiclassical Drude-Boltzmann model considering donor scattering mechanisms. To perform these calculations, the required values of the carrier effective mass were extracted from reported angle-resolved photoemission results. The calculated doping dependence of the surface conductance reproduces experimental results reported and reveals an intricate metallization process driven by disorder and assisted by interband interactions. The system should behave as an insulator even at relatively low doping due to disorder. However, when doping increases, the system achieves to attenuate the inherent localization effects introduced by disorder and to conduct by percolation. The mechanism found by the system to conduct appears to be connected with the increasing of the carrier effective mass observed with doping, which seems to be caused by interband interactions involving the conducting band and deeper ones. This mass enhancement reduces the donor Bohr radius and, consequently, promotes the screening ability of the donor potential by the electron gas.

  2. Low energy gamma induced radiation damage in YBCO: electrical resistivity and the induced metal - insulator transition behaviors

    International Nuclear Information System (INIS)

    Cruz, Carlos M.; Pinnera, Ibrahin; Leyva, Antonio; Abreu, Yamiel; Sirgado, Nicolas

    2015-01-01

    In the present contribution the superconducting YBCO ρ(T) dependence behavior on the irradiation dose and accumulative time are studied for gamma quanta of E γ = 132 keV ( 57 Co) and 1,25 MeV ( 60 Co) at room temperature. In both cases, possible radiation effects on grain boundary and intragrain zones are evaluated by means of different gamma ray microscopic interaction models. It was conclude that 57 Co gamma quanta (E γ = 132 keV) modules YBCO ρ(T) dependence behavior through enhanced oxygen vacancy diffusion motions which collapse the electron percolative conduction paths in the grain boundary zones, effects which are not observed by irradiation with 60 Co gamma quanta (E γ = 1,25 MeV), in which case main irradiation effects on the electrical conduction mechanisms are limited to the intragrain zones. (Author)

  3. Charge and spin diffusion on the metallic side of the metal-insulator transition: A self-consistent approach

    Science.gov (United States)

    Wellens, Thomas; Jalabert, Rodolfo A.

    2016-10-01

    We develop a self-consistent theory describing the spin and spatial electron diffusion in the impurity band of doped semiconductors under the effect of a weak spin-orbit coupling. The resulting low-temperature spin-relaxation time and diffusion coefficient are calculated within different schemes of the self-consistent framework. The simplest of these schemes qualitatively reproduces previous phenomenological developments, while more elaborate calculations provide corrections that approach the values obtained in numerical simulations. The results are universal for zinc-blende semiconductors with electron conductance in the impurity band, and thus they are able to account for the measured spin-relaxation times of materials with very different physical parameters. From a general point of view, our theory opens a new perspective for describing the hopping dynamics in random quantum networks.

  4. Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

    OpenAIRE

    Deepak Kumar Kaushik; K. Uday Kumar; A. Subrahmanyam

    2017-01-01

    Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl∼1; kF is the Fermi wave vector and l ...

  5. k-dependent spectrum and optical conductivity near metal-insulator transition in multi-orbital hubbard bands

    International Nuclear Information System (INIS)

    Miura, Oki; Fujiwara, Takeo

    2006-01-01

    We apply the dynamical mean field theory (DMFT) combined with the iterative perturbation theory (IPT) to the doubly degenerate e g and the triply degenerate f 2g bands on a simple cubic lattice and a body-centered cubic lattice and calculate the spectrum and optical conductivity in arbitrary electron occupation. The spectrum simultaneously shows the effects of multiplet structure together with the electron ionization and affinity levels of different electron occupations, coherent peaks at the Fermi energy in the metallic phase and an energy gap at an integer filling of electrons for sufficiently large Coulomb U. We also discuss the critical value of the Coulomb U for degenerate orbitals on a simple cubic lattice and a body-centered cubic lattice. (author)

  6. Atomic layer deposition of HfO{sub 2} for integration into three-dimensional metal-insulator-metal devices

    Energy Technology Data Exchange (ETDEWEB)

    Assaud, Loic [Aix Marseille Univ, CNRS, CINAM, Marseille (France); ICMMO-ERIEE, Universite Paris-Sud / Universite Paris-Saclay, CNRS, Orsay (France); Pitzschel, Kristina; Barr, Maissa K.S.; Petit, Matthieu; Hanbuecken, Margrit; Santinacci, Lionel [Aix Marseille Univ, CNRS, CINAM, Marseille (France); Monier, Guillaume [Universite Clermont Auvergne, Universite Blaise Pascal, CNRS, Institut Pascal, Clermont-Ferrand (France)

    2017-12-15

    HfO{sub 2} nanotubes have been fabricated via a template-assisted deposition process for further use in three-dimensional metal-insulator-metal (MIM) devices. HfO{sub 2} thin layers were grown by Atomic Layer Deposition (ALD) in anodic alumina membranes (AAM). The ALD was carried out using tetrakis(ethylmethylamino)hafnium and water as Hf and O sources, respectively. Long exposure durations to the precursors have been used to maximize the penetration depth of the HfO{sub 2} layer within the AAM and the effect of the process temperature was investigated. The morphology, the chemical composition, and the crystal structure were studied as a function of the deposition parameters using transmission and scanning electron microscopies, X-ray photoelectron spectroscopy, and X-ray diffraction, respectively. As expected, the HfO{sub 2} layers grown at low-temperature (T = 150 C) were amorphous, while for a higher temperature (T = 250 C), polycrystalline films were observed. The electrical characterizations have shown better insulating properties for the layers grown at low temperature. Finally, TiN/HfO{sub 2}/TiN multilayers were grown in an AAM as proof-of-concept for three-dimensional MIM nanostructures. (orig.)

  7. Microstructure and chemical analysis of Hf-based high-k dielectric layers in metal-insulator-metal capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Thangadurai, P. [Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Mikhelashvili, V.; Eisenstein, G. [Department of Electrical Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Kaplan, W.D., E-mail: kaplan@tx.technion.ac.i [Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel)

    2010-05-31

    The microstructure and chemistry of the high-k gate dielectric significantly influences the performance of metal-insulator-metal (MIM) and metal-oxide-semiconductor devices. In particular, the local structure, chemistry, and inter-layer mixing are important phenomena to be understood. In the present study, high resolution and analytical transmission electron microscopy are combined to study the local structure, morphology, and chemistry in MIM capacitors containing a Hf-based high-k dielectric. The gate dielectric, bottom and gate electrodes were deposited on p-type Si(100) wafers by electron beam evaporation. Four chemically distinguishable sub-layers were identified within the dielectric stack. One is an unintentionally formed 4.0 nm thick interfacial layer of Ta{sub 2}O{sub 5} at the interface between the Ta electrode and the dielectric. The other three layers are based on HfN{sub x}O{sub y} and HfTiO{sub y}, and intermixing between the nearby sub-layers including deposited SiO{sub 2}. Hf-rich clusters were found in the HfN{sub x}O{sub y} layer adjacent to the Ta{sub 2}O{sub 5} layer.

  8. A highly efficient surface plasmon polaritons excitation achieved with a metal-coupled metal-insulator-metal waveguide

    Directory of Open Access Journals (Sweden)

    Hongyan Yang

    2014-12-01

    Full Text Available We propose a novel metal-coupled metal-insulator-metal (MC-MIM waveguide which can achieve a highly efficient surface plasmon polaritons (SPPs excitation. The MC-MIM waveguide is formed by inserting a thin metal film in the insulator of an MIM. The introduction of the metal film, functioning as an SPPs coupler, provides a space for the interaction between SPPs and a confined electromagnetic field of the intermediate metal surface, which makes energy change and phase transfer in the metal-dielectric interface, due to the joint action of incomplete electrostatic shielding effect and SPPs coupling. Impacts of the metal film with different materials and various thickness on SPPs excitation are investigated. It is shown that the highest efficient SPPs excitation is obtained when the gold film thickness is 60 nm. The effect of refractive index of upper and lower symmetric dielectric layer on SPPs excitation is also discussed. The result shows that the decay value of refractive index is 0.3. Our results indicate that this proposed MC-MIM waveguide may offer great potential in designing a new SPPs source.

  9. Interface States in AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors

    International Nuclear Information System (INIS)

    Feng Qian; Du Kai; Li Yu-Kun; Shi Peng; Feng Qing

    2013-01-01

    Frequency-dependent capacitance and conductance measurements are performed on AlGaN/GaN high electron mobility transistors (HEMTs) and NbAlO/AlGaN/GaN metal-insulator-semiconductor HEMTs (MISHEMTs) to extract density and time constants of the trap states at NbAlO/AlGaN interface and gate/AlGaN interface with the gate-voltage biased into the accumulation region and that at the AlGaN/GaN interface with the gate-voltage biased into the depletion region in different circuit models. The measurement results indicate that the trap density at NbAlO/AlGaN interface is about one order lower than that at gate/AlGaN interface while the trap density at AlGaN/GaN interface is in the same order, so the NbAlO film can passivate the AlGaN surface effectively, which is consistent with the current collapse results

  10. Photoelectrical measurements of the local value of the contact potential difference in the metal-insulator semiconductor (MIS) structures

    Energy Technology Data Exchange (ETDEWEB)

    Kudla, A.; Przewlocki, H.M.; Borowicz, L.; Brzezinska, D.; Rzodkiewicz, W

    2004-02-22

    In this work the local values of contact potential difference (CPD) and their distributions in the plane of the metal-insulator-semiconductor (MIS) structure's gate have been determined for the first time. This has been achieved by application of a focused beam of UV radiation from a laser source. The less than 20-{mu}m diameter of UV radiation beam allows determination of distributions of local CPD values in the plane of the gate. The CPD distribution is such that its values are highest far away from the gate edge regions, lower in the vicinity of gate edges and still lower in the vicinity of gate corners. In this paper the method and the optical setup used to determine local values of CPD are described and example measurement results are given. The CPD distributions obtained have been confirmed by a series of independent measurements by other methods. It is believed that the CPD distributions obtained (as well as distributions of local values of other parameters) are due to the mechanical stress distributions under the gate of a MIS system.

  11. Metal insulator semiconductor solar cell devices based on a Cu2O substrate utilizing h-BN as an insulating and passivating layer

    International Nuclear Information System (INIS)

    Ergen, Onur; Gibb, Ashley; Vazquez-Mena, Oscar; Zettl, Alex; Regan, William Raymond

    2015-01-01

    We demonstrate cuprous oxide (Cu 2 O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu 2 O layer. The devices are the most efficient of any Cu 2 O based MIS-Schottky solar cells reported to date

  12. Metal insulator semiconductor solar cell devices based on a Cu{sub 2}O substrate utilizing h-BN as an insulating and passivating layer

    Energy Technology Data Exchange (ETDEWEB)

    Ergen, Onur; Gibb, Ashley; Vazquez-Mena, Oscar; Zettl, Alex, E-mail: azettl@berkeley.edu [Department of Physics, University of California at Berkeley, Berkeley, California 94720 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Kavli Energy Nanosciences Institute at the University of California, Berkeley, and the Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Regan, William Raymond [Department of Physics, University of California at Berkeley, Berkeley, California 94720 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

    2015-03-09

    We demonstrate cuprous oxide (Cu{sub 2}O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu{sub 2}O layer. The devices are the most efficient of any Cu{sub 2}O based MIS-Schottky solar cells reported to date.

  13. General observation of the memory effect in metal-insulator-ITO structures due to indium diffusion

    International Nuclear Information System (INIS)

    Wu, Xiaojing; Xu, Huihua; Zhao, Ni; Wang, Yu; Rogach, Andrey L; Shen, Yingzhong

    2015-01-01

    Resistive random access memory (RRAM) devices based on metal oxides, organic molecules and inorganic nanocrystals (NCs) have been studied extensively in recent years. Different memory switching mechanisms have been proposed and shown to be closely related to the device architectures. In this work, we demonstrate that the use of an ITO/active layer/InGa structure can yield nonvolatile resistive memory behavior in a variety of active materials, including polymers, organic small molecules, and colloidal NCs. Through the electrode material and thickness-dependent study, we show that the ON state of the devices is associated with filamentary conduction induced by indium diffusion from the ITO electrode, occurring mostly within around 40–50 nm from the ITO/active layer interface. A negative differential resistance (NDR) regime is observed during transition from the ON to OFF state, and is explained by the space charge limited current (SCLC) effect due to hole injection at the ITO/active layer interface. Our study reveals the impact of indium diffusion at the ITO/active layer interface, an important factor that should be taken into consideration when designing thin printed RRAM devices. (paper)

  14. The evolution of Griffiths-phase-like features and colossal magnetoresistance in La1-xCaxMnO3 (0.18 ≤ x ≤ 0.27) across the compositional metal-insulator boundary

    International Nuclear Information System (INIS)

    Jiang Wanjun; Zhou Xuezhi; Williams, Gwyn; Mukovskii, Y; Privezentsev, R

    2009-01-01

    Detailed measurements of the magnetic and transport properties of single crystals of La 1-x Ca x MnO 3 (0.18 ≤ x ≤ 0.27) are summarized, and lead to the following conclusions. While temperature-dependent (magneto-) resistance measurements narrow the compositionally modulated metal-insulator (M-I) transition to lie between 0.19 ≤ x c ≤ 0.20 in the series studied, comparisons between the latter magnetic data provide the first unequivocal demonstration that (i) the presence of Griffiths-phase-like (GP) features do not guarantee colossal magnetoresistance (CMR), while confirming (ii) that neither are the appearance of such features a prerequisite for CMR. These data also reveal that (iii) whereas continuous magnetic transitions occur for 0.18 ≤ x ≤ 0.25, the universality class of these transitions belongs to that of a nearest-neighbour 3D Heisenberg model only for x≤0.20, beyond which complications due to GP-like behaviour occur. The implications of the variation (or lack thereof) in critical exponents and particularly critical amplitudes and temperatures across the compositionally mediated M-I transition support the assertion that the dominant mechanism underlying ferromagnetism across the M-I transition changes from ferromagnetic super-exchange (SE) stabilized by orbital ordering in the insulating phase to double-exchange (DE) in the orbitally disordered metallic regime. The variations in the acoustic spin-wave stiffness, D, and the coercive field, H C , support this conclusion. These SE and DE interaction mechanisms are demonstrated to not only belong to the same universality class but are also characterized by comparable coupling strengths. Nevertheless, their percolation thresholds are manifestly different in this system.

  15. Density of interface states, excess capacitance and series resistance in the metal-insulator-semiconductor (MIS) solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Altindal, Semsettin; Tataroglu, Adem; Dokme, Ilbilge [Faculty of Arts and Sciences, Physics Department, Gazi University, 06500, Ankara (Turkey)

    2005-01-31

    Dark and illuminated current-voltage (I-V) characteristics of Al/SiO{sub x}/p-Si metal-insulator-semiconductor (MIS) solar cells were measured at room temperature. In addition to capacitance-voltage (C-V) and conductance-voltage (G-V), characteristics are studied at a wide frequency range of 1kHz-10MHz. The dark I-V characteristics showed non-ideal behavior with an ideal factor of 3.2. The density of interface states distribution profiles as a function of (E{sub ss}-E{sub v}) deduced from the I-V measurements at room temperature for the MIS solar cells on the order of 10{sup 13}cm{sup -2}eV{sup -1}. These interface states were responsible for the non-ideal behavior of I-V, C-V and G-V characteristics. Frequency dispersion in capacitance for MIS solar cells can be interpreted only in terms of interface states. The interface states can follow the a.c. signal and yield an excess capacitance, which depends on the relaxation time of interface states and the frequency of the a.c. signal. It was observed that the excess capacitance C{sub o} caused by an interface state decreases with an increase of frequency. The capacitances characteristics of MIS solar cells are affected not only in interface states but also series resistance. Analysis of this data indicated that the high interface states and series resistance leads to lower values of open-circuit voltage, short-circuit current density, and fill factor. Experimental results show that the location of interface states and series resistance have a significant effect on I-V, C-V and G-V characteristics.

  16. Field-induced negative differential spin lifetime in silicon.

    Science.gov (United States)

    Li, Jing; Qing, Lan; Dery, Hanan; Appelbaum, Ian

    2012-04-13

    We show that the electric-field-induced thermal asymmetry between the electron and lattice systems in pure silicon substantially impacts the identity of the dominant spin relaxation mechanism. Comparison of empirical results from long-distance spin transport devices with detailed Monte Carlo simulations confirms a strong spin depolarization beyond what is expected from the standard Elliott-Yafet theory even at low temperatures. The enhanced spin-flip mechanism is attributed to phonon emission processes during which electrons are scattered between conduction band valleys that reside on different crystal axes. This leads to anomalous behavior, where (beyond a critical field) reduction of the transit time between spin-injector and spin-detector is accompanied by a counterintuitive reduction in spin polarization and an apparent negative spin lifetime.

  17. Conduction and rectification in NbO{sub x}- and NiO-based metal-insulator-metal diodes

    Energy Technology Data Exchange (ETDEWEB)

    Osgood, Richard M., E-mail: richard.m.osgood.civ@mail.mil; Giardini, Stephen; Carlson, Joel [US Army Natick Soldier Research Development and Engineering Center (NSRDEC), 15 General Greene Ave., Natick, Massachusetts 01760 (United States); Periasamy, Prakash; Guthrey, Harvey; O' Hayre, Ryan [Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, Colorado 80401 (United States); Chin, Matthew; Nichols, Barbara; Dubey, Madan [RF and Electronics Division, US Army Research Laboratory, Adelphi, Maryland 20783 (United States); Fernandes, Gustavo; Kim, Jin Ho; Xu, Jimmy [Division of Engineering, Brown University, Box D, Providence, Rhode Island 02912 (United States); Parilla, Philip; Berry, Joseph; Ginley, David [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

    2016-09-15

    Conduction and rectification in nanoantenna-coupled NbO{sub x}- and NiO-based metal-insulator-metal (MIM) diodes (“nanorectennas”) are studied by comparing new theoretical predictions with the measured response of nanorectenna arrays. A new quantum mechanical model is reported and agrees with measurements of current–voltage (I–V) curves, over 10 orders of magnitude in current density, from [NbO{sub x}(native)-Nb{sub 2}O{sub 5}]- and NiO-based samples with oxide thicknesses in the range of 5–36 nm. The model, which introduces new physics and features, including temperature, electron effective mass, and image potential effects using the pseudobarrier technique, improves upon widely used earlier models, calculates the MIM diode's I–V curve, and predicts quantitatively the rectification responsivity of high frequency voltages generated in a coupled nanoantenna array by visible/near-infrared light. The model applies both at the higher frequencies, when high-energy photons are incident, and at lower frequencies, when the formula for classical rectification, involving derivatives of the I–V curve, may be used. The rectified low-frequency direct current is well-predicted in this work's model, but not by fitting the experimentally measured I–V curve with a polynomial or by using the older Simmons model (as shown herein). By fitting the measured I–V curves with our model, the barrier heights in Nb-(NbO{sub x}(native)-Nb{sub 2}O{sub 5})-Pt and Ni-NiO-Ti/Ag diodes are found to be 0.41/0.77 and 0.38/0.39 eV, respectively, similar to literature reports, but with effective mass much lower than the free space value. The NbO{sub x} (native)-Nb{sub 2}O{sub 5} dielectric properties improve, and the effective Pt-Nb{sub 2}O{sub 5} barrier height increases as the oxide thickness increases. An observation of direct current of ∼4 nA for normally incident, focused 514 nm continuous wave laser beams are reported, similar in magnitude to recent reports

  18. Study of field induced hot-electron emission using the composite microemitters with varying dielectric layer thickness

    International Nuclear Information System (INIS)

    Mousa, M.S.

    1987-07-01

    The analysis of the measurements obtained from the of field emission of electrons from composite metal-insulator (M-I) micropoint cathodes, using the combination of a high resolution electron spectrometer and a field emission microscope, has been presented. Results obtained describe the reversible current-voltage characteristic, emission images and electron energy distribution measurements of both thin and the optimum thick coatings. The observed effects, e.g. the threshold switch-on phenomena and the field-dependence of the F.W.H.M. and energy shift of the electron spectra have been identified in terms of a field-induced hot-electron emission (FIHEE) mechanism resulting from field penetration in the insulating film where conducting channels are formed. The theoretical implications accounts for the channels field intensification mechanism and the conduction properties with applied field, and the F.W.H.M. dependence on electron temperature. The control of the emission process at low fields by the M-I contact junction and at high fields by the bulk properties of the insulator have also been accounted for. These experimental and theoretical findings have been shown to be consistent with recently published data on M-I microstructures on broad-area (BA) high-voltage electrodes. (author). 18 refs, 6 figs

  19. Deconstructing field-induced ketene isomerization through Lagrangian descriptors.

    Science.gov (United States)

    Craven, Galen T; Hernandez, Rigoberto

    2016-02-07

    The time-dependent geometrical separatrices governing state transitions in field-induced ketene isomerization are constructed using the method of Lagrangian descriptors. We obtain the stable and unstable manifolds of time-varying transition states as dynamic phase space objects governing configurational changes when the ketene molecule is subjected to an oscillating electric field. The dynamics of the isomerization reaction are modeled through classical trajectory studies on the Gezelter-Miller potential energy surface and an approximate dipole moment model which is coupled to a time-dependent electric field. We obtain a representation of the reaction geometry, over varying field strengths and oscillation frequencies, by partitioning an initial phase space into basins labeled according to which product state is reached at a given time. The borders between these basins are in agreement with those obtained using Lagrangian descriptors, even in regimes exhibiting chaotic dynamics. Major outcomes of this work are: validation and extension of a transition state theory framework built from Lagrangian descriptors, elaboration of the applicability for this theory to periodically- and aperiodically-driven molecular systems, and prediction of regimes in which isomerization of ketene and its derivatives may be controlled using an external field.

  20. Disordered Nanohole Patterns in Metal-Insulator Multilayer for Ultra-broadband Light Absorption: Atomic Layer Deposition for Lithography Free Highly repeatable Large Scale Multilayer Growth.

    Science.gov (United States)

    Ghobadi, Amir; Hajian, Hodjat; Dereshgi, Sina Abedini; Bozok, Berkay; Butun, Bayram; Ozbay, Ekmel

    2017-11-08

    In this paper, we demonstrate a facile, lithography free, and large scale compatible fabrication route to synthesize an ultra-broadband wide angle perfect absorber based on metal-insulator-metal-insulator (MIMI) stack design. We first conduct a simulation and theoretical modeling approach to study the impact of different geometries in overall stack absorption. Then, a Pt-Al 2 O 3 multilayer is fabricated using a single atomic layer deposition (ALD) step that offers high repeatability and simplicity in the fabrication step. In the best case, we get an absorption bandwidth (BW) of 600 nm covering a range of 400 nm-1000 nm. A substantial improvement in the absorption BW is attained by incorporating a plasmonic design into the middle Pt layer. Our characterization results demonstrate that the best configuration can have absorption over 0.9 covering a wavelength span of 400 nm-1490 nm with a BW that is 1.8 times broader compared to that of planar design. On the other side, the proposed structure retains its absorption high at angles as wide as 70°. The results presented here can serve as a beacon for future performance enhanced multilayer designs where a simple fabrication step can boost the overall device response without changing its overall thickness and fabrication simplicity.

  1. Near-Field Nanoscopy of Metal-Insulator Phase Transitions Towards Synthesis of Novel Correlated Transition Metal Oxides and Their Interaction with Plasmon Resonances

    Science.gov (United States)

    2016-01-05

    metal and osmium (IV) oxide in the presence of stoichiometric amounts of magnesium oxide. The crystal structure was refined using powder X-ray...The blue octahedral represent [MO6]7-, the yellow circles are Li rich positions and the large green circles are magnesium rich positions material...M. Lazzeri, A. K. Geim, and C. Casiraghi, Raman Fingerprint of Aligned Graphene/H-Bn Superlattices, Nano Letters 13, 5242-5246 (2013). 13. Q. H

  2. Strongly correlated electron systems and neutron scattering. Magnetism, superconductivity, structural phase transition

    Energy Technology Data Exchange (ETDEWEB)

    Katano, Susumu [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

    1998-03-01

    Neutron scattering experiments in our group on strongly correlated electron systems are reviewed Metal-insulator transitions caused by structural phase transitions in (La{sub 1-x}Sr{sub x}) MnO{sub 3}, a novel magnetic transition in the CeP compound, correlations between antiferromagnetism and superconductivity in UPd{sub 2}Al{sub 3} and so forth are discussed. Here, in this note, the phase transition of Mn-oxides was mainly described. (author)

  3. Surface modifications by field induced diffusion.

    Directory of Open Access Journals (Sweden)

    Martin Olsen

    Full Text Available By applying a voltage pulse to a scanning tunneling microscope tip the surface under the tip will be modified. We have in this paper taken a closer look at the model of electric field induced surface diffusion of adatoms including the van der Waals force as a contribution in formations of a mound on a surface. The dipole moment of an adatom is the sum of the surface induced dipole moment (which is constant and the dipole moment due to electric field polarisation which depends on the strength and polarity of the electric field. The electric field is analytically modelled by a point charge over an infinite conducting flat surface. From this we calculate the force that cause adatoms to migrate. The calculated force is small for voltage used, typical 1 pN, but due to thermal vibration adatoms are hopping on the surface and even a small net force can be significant in the drift of adatoms. In this way we obtain a novel formula for a polarity dependent threshold voltage for mound formation on the surface for positive tip. Knowing the voltage of the pulse we then can calculate the radius of the formed mound. A threshold electric field for mound formation of about 2 V/nm is calculated. In addition, we found that van der Waals force is of importance for shorter distances and its contribution to the radial force on the adatoms has to be considered for distances smaller than 1.5 nm for commonly used voltages.

  4. Effects of insulating vanadium oxide composite in concomitant mixed phases via interface barrier modulations on the performance improvements in metal-insulator-metal diodes

    Directory of Open Access Journals (Sweden)

    Kaleem Abbas

    2018-03-01

    Full Text Available The performance of metal-insulator-metal diodes is investigated for insulating vanadium oxide (VOx composite composed of concomitant mixed phases using the Pt metal as the top and the bottom electrodes. Insulating VOx composite in the Pt/VOx/Pt diode exhibits a high asymmetry of 10 and a very high sensitivity of 2,135V−1 at 0.6 V. The VOx composite provides Schottky-like barriers at the interface, which controls the current flow and the trap-assisted conduction mechanism. Such dramatic enhancement in asymmetry and rectification performance at low applied bias may be ascribed to the dynamic control of the insulating and metallic phases in VOx composites. We find that the nanostructure details of the insulating VOx layer can be critical in enhancing the performance of MIM diodes.

  5. Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

    Energy Technology Data Exchange (ETDEWEB)

    Popovici, M., E-mail: Mihaela.Ioana.Popovici@imec.be; Swerts, J.; Redolfi, A.; Kaczer, B.; Aoulaiche, M.; Radu, I.; Clima, S.; Everaert, J.-L.; Van Elshocht, S.; Jurczak, M. [Imec, Leuven 3001 (Belgium)

    2014-02-24

    Improved metal-insulator-metal capacitor (MIMCAP) stacks with strontium titanate (STO) as dielectric sandwiched between Ru as top and bottom electrode are shown. The Ru/STO/Ru stack demonstrates clearly its potential to reach sub-20 nm technology nodes for dynamic random access memory. Downscaling of the equivalent oxide thickness, leakage current density (J{sub g}) of the MIMCAPs, and physical thickness of the STO have been realized by control of the Sr/Ti ratio and grain size using a heterogeneous TiO{sub 2}/STO based nanolaminate stack deposition and a two-step crystallization anneal. Replacement of TiN with Ru as both top and bottom electrodes reduces the amount of electrically active defects and is essential to achieve a low leakage current in the MIM capacitor.

  6. Impact of Interface States and Bulk Carrier Lifetime on Photocapacitance of Metal/Insulator/GaN Structure for Ultraviolet Light Detection

    Science.gov (United States)

    Bidzinski, Piotr; Miczek, Marcin; Adamowicz, Boguslawa; Mizue, Chihoko; Hashizume, Tamotsu

    2011-04-01

    The influence of interface state density and bulk carrier lifetime on the dependencies of photocapacitance versus wide range of gate bias (-0.1 to -3 V) and light intensity (109 to 1020 photon cm-2 s-1) was studied for metal/insulator/n-GaN UV light photodetector by means of numerical simulations. The light detection limit and photocapacitance saturation were analyzed in terms of the interface charge and interface Fermi level for electrons and holes and effective interface recombination velocity. It was proven that the excess carrier recombination through interface states is the main reason of photocapacitance signal quenching. It was found that the photodetector can work in various modes (on-off or quantitative light measurement) adjusted by the gate bias. A comparison between experimental data and theoretical capacitance-light intensity characteristics was made. A new method for the determination of the interface state density distribution from capacitance-voltage-light intensity measurements was also proposed.

  7. Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

    International Nuclear Information System (INIS)

    Gao, Tao; Xu, Ruimin; Kong, Yuechan; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng

    2015-01-01

    We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr 0.52 Ti 0.48 )-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g m -V g ) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric

  8. N-polar GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching

    Science.gov (United States)

    Prasertsuk, Kiattiwut; Tanikawa, Tomoyuki; Kimura, Takeshi; Kuboya, Shigeyuki; Suemitsu, Tetsuya; Matsuoka, Takashi

    2018-01-01

    The metal-insulator-semiconductor (MIS) gate N-polar GaN/AlGaN/GaN high-electron-mobility transistor (HEMT) on a (0001) sapphire substrate, which can be expected to operate with lower on-resistance and more easily work on the pinch-off operation than an N-polar AlGaN/GaN HEMT, was fabricated. For suppressing the step bunching and hillocks peculiar in the N-polar growth, a sapphire substrate with an off-cut angle as small as 0.8° was introduced and an N-polar GaN/AlGaN/GaN HEMT without the step bunching was firstly obtained by optimizing the growth conditions. The previously reported anisotropy of transconductance related to the step was eliminated. The pinch-off operation was also realized. These results indicate that this device is promising.

  9. Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Tao [Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China (UESTC), Chengdu 611731 (China); Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016 (China); Xu, Ruimin [Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China (UESTC), Chengdu 611731 (China); Kong, Yuechan, E-mail: kycfly@163.com; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng [Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016 (China)

    2015-06-15

    We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr{sub 0.52}Ti{sub 0.48})-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g{sub m}-V{sub g}) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric.

  10. Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs

    Science.gov (United States)

    Zaidi, Z. H.; Lee, K. B.; Roberts, J. W.; Guiney, I.; Qian, H.; Jiang, S.; Cheong, J. S.; Li, P.; Wallis, D. J.; Humphreys, C. J.; Chalker, P. R.; Houston, P. A.

    2018-05-01

    In a bid to understand the commonly observed hysteresis in the threshold voltage (VTH) in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors during forward gate bias stress, we have analyzed a series of measurements on devices with no surface treatment and with two different plasma treatments before the in-situ Al2O3 deposition. The observed changes between samples were quasi-equilibrium VTH, forward bias related VTH hysteresis, and electrical response to reverse bias stress. To explain these effects, a disorder induced gap state model, combined with a discrete level donor, at the dielectric/semiconductor interface was employed. Technology Computer-Aided Design modeling demonstrated the possible differences in the interface state distributions that could give a consistent explanation for the observations.

  11. Fabrication and characterization of NiO based metal-insulator-metal diode using Langmuir-Blodgett method for high frequency rectification

    Science.gov (United States)

    Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

    2018-04-01

    Thin film metal-insulator-metal (MIM) diodes have attracted significant attention for use in infrared energy harvesting and detection applications. As demonstrated over the past decades, MIM or metal-insulator-insulator-metal (MIIM) diodes can operate at the THz frequencies range by quantum tunneling of electrons. The aim of this work is to synthesize required ultra-thin insulating layers and fabricate MIM diodes using the Langmuir-Blodgett (LB) technique. The nickel stearate (NiSt) LB precursor film was deposited on glass, silicon (Si), ITO glass and gold coated silicon substrates. The photodesorption (UV exposure) and the thermodesorption (annealing at 100 °C and 350 °C) methods were used to remove organic components from the NiSt LB film and to achieve a uniform homogenous nickel oxide (NiO) film. These ultrathin NiO films were characterized by EDS, AFM, FTIR and cyclic voltammetry methods, respectively. The MIM diode was fabricated by depositing nickel (Ni) on the NiO film, all on a gold (Au) plated silicon (Si) substrate. The current (I)-voltage (V) characteristics of the fabricated diode were studied to understand the conduction mechanism assumed to be tunneling of electron through the ultra-thin insulating layer. The sensitivity of the diode was measured to be as high as 35 V-1. The diode resistance was ˜100 ohms (at a bias voltage of 0.60 V), and the rectification ratio was about 22 (for a signal voltage of ±200 mV). At the bias point, the diode response demonstrated significant non-linearity and high asymmetry, which are very desirable characteristics for applications in infrared detection and harvesting.

  12. Temperature dependent electrical characterisation of Pt/HfO{sub 2}/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Shetty, Arjun, E-mail: arjun@ece.iisc.ernet.in; Vinoy, K. J. [Electrical Communication Engineering, Indian Institute of Science, Bangalore, India 560012 (India); Roul, Basanta; Mukundan, Shruti; Mohan, Lokesh; Chandan, Greeshma; Krupanidhi, S. B. [Materials Research Centre, Indian Institute of Science, Bangalore, India 560012 (India)

    2015-09-15

    This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS) Schottky diode characteristics by the introduction of a layer of HfO{sub 2} (5 nm) between the metal and semiconductor interface. The resulting Pt/HfO{sub 2}/n-GaN metal-insulator-semiconductor (MIS) Schottky diode showed an increase in rectification ratio from 35.9 to 98.9(@ 2V), increase in barrier height (0.52 eV to 0.63eV) and a reduction in ideality factor (2.1 to 1.3) as compared to the MS Schottky. Epitaxial n-type GaN films of thickness 300nm were grown using plasma assisted molecular beam epitaxy (PAMBE). The crystalline and optical qualities of the films were confirmed using high resolution X-ray diffraction and photoluminescence measurements. Metal-semiconductor (Pt/n-GaN) and metal-insulator-semiconductor (Pt/HfO{sub 2}/n-GaN) Schottky diodes were fabricated. To gain further understanding of the Pt/HfO{sub 2}/GaN interface, I-V characterisation was carried out on the MIS Schottky diode over a temperature range of 150 K to 370 K. The barrier height was found to increase (0.3 eV to 0.79 eV) and the ideality factor decreased (3.6 to 1.2) with increase in temperature from 150 K to 370 K. This temperature dependence was attributed to the inhomogeneous nature of the contact and the explanation was validated by fitting the experimental data into a Gaussian distribution of barrier heights.

  13. Field-induced cluster spin glass and inverse symmetry breaking enhanced by frustration

    Science.gov (United States)

    Schmidt, M.; Zimmer, F. M.; Magalhaes, S. G.

    2018-03-01

    We consider a cluster disordered model to study the interplay between short- and long-range interactions in geometrically frustrated spin systems under an external magnetic field (h). In our approach, the intercluster long-range disorder (J) is analytically treated to get an effective cluster model that is computed exactly. The clusters follow a checkerboard lattice with first-neighbor (J1) and second-neighbor (J2) interactions. We find a reentrant transition from the cluster spin-glass (CSG) state to a paramagnetic (PM) phase as the temperature decreases for a certain range of h. This inverse symmetry breaking (ISB) appears as a consequence of both quenched disorder with frustration and h, that introduce a CSG state with higher entropy than the polarized PM phase. The competitive scenario introduced by antiferromagnetic (AF) short-range interactions increases the CSG state entropy, leading to continuous ISB transitions and enhancing the ISB regions, mainly in the geometrically frustrated case (J1 =J2). Remarkably, when strong AF intracluster couplings are present, field-induced CSG phases can be found. These CSG regions are strongly related to the magnetization plateaus observed in this cluster disordered system. In fact, it is found that each field-induced magnetization jump brings a CSG region. We notice that geometrical frustration, as well as cluster size, play an important role in the magnetization plateaus and, therefore, are also relevant in the field-induced glassy states. Our findings suggest that competing interactions support ISB and field-induced CSG phases in disordered cluster systems under an external magnetic field.

  14. Field-induced magnetic instability and quantum criticality in the antiferromagnet CeCu2Ge2.

    Science.gov (United States)

    Liu, Yi; Xie, Donghua; Wang, Xiaoying; Zhu, Kangwei; Yang, Ruilong

    2016-01-13

    The magnetic quantum criticality in strongly correlated electron systems has been considered to be closely related with the occurrence of unconventional superconductivity. Control parameters such as magnetic field, pressure or chemical doping are frequently used to externally tune the quantum phase transition for a deeper understanding. Here we report the research of a field-induced quantum phase transition using conventional bulk physical property measurements in the archetypal antiferromagnet CeCu2Ge2, which becomes superconductive under a pressure of about 10 GPa with Tc ~ 0.64 K. We offer strong evidence that short-range dynamic correlations start appearing above a magnetic field of about 5 T. Our demonstrations of the magnetic instability and the field-induced quantum phase transition are crucial for the quantum criticality, which may open a new route in experimental investigations of the quantum phase transition in heavy-fermion systems.

  15. Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Le, Son Phuong; Ui, Toshimasa; Nguyen, Tuan Quy; Shih, Hong-An; Suzuki, Toshi-kazu, E-mail: tosikazu@jaist.ac.jp [Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)

    2016-05-28

    Using aluminum titanium oxide (AlTiO, an alloy of Al{sub 2}O{sub 3} and TiO{sub 2}) as a high-k gate insulator, we fabricated and investigated AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors. From current low-frequency noise (LFN) characterization, we find Lorentzian spectra near the threshold voltage, in addition to 1/f spectra for the well-above-threshold regime. The Lorentzian spectra are attributed to electron trapping/detrapping with two specific time constants, ∼25 ms and ∼3 ms, which are independent of the gate length and the gate voltage, corresponding to two trap level depths of 0.5–0.7 eV with a 0.06 eV difference in the AlTiO insulator. In addition, gate leakage currents are analyzed and attributed to the Poole-Frenkel mechanism due to traps in the AlTiO insulator, where the extracted trap level depth is consistent with the Lorentzian LFN.

  16. Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

    Science.gov (United States)

    Hanna, Mina J.; Zhao, Han; Lee, Jack C.

    2012-10-01

    We analyze the anomalous I-V behavior in SiN prepared by plasma enhanced chemical vapor deposition for use as a gate insulator in AlGaN/GaN metal insulator semiconductor heterostructure filed effect transistors (HFETs). We observe leakage current across the dielectric with opposite polarity with respect to the applied electric field once the voltage sweep reaches a level below a determined threshold. This is observed as the absolute minimum of the leakage current does not occur at minimum voltage level (0 V) but occurs earlier in the sweep interval. Curve-fitting analysis suggests that the charge-transport mechanism in this region is Poole-Frenkel current, followed by Schottky emission due to band bending. Despite the current anomaly, the sample devices have shown a notable reduction of leakage current of over 2 to 6 order of magnitudes compared to the standard Schottky HFET. We show that higher pressures and higher silane concentrations produce better films manifesting less trapping. This conforms to our results that we reported in earlier publications. We found that higher chamber pressure achieves higher sheet carrier concentration that was found to be strongly dependent on the trapped space charge at the SiN/GaN interface. This would suggest that a lower chamber pressure induces more trap states into the SiN/GaN interface.

  17. AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Shichuang [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Fu, Kai, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn; Yu, Guohao; Zhang, Zhili; Song, Liang; Deng, Xuguang; Li, Shuiming; Sun, Qian; Cai, Yong; Zhang, Baoshun [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Qi, Zhiqiang; Dai, Jiangnan; Chen, Changqing, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2016-01-04

    This letter has studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon substrate with GaN buffer treated by aluminum ion implantation for insulating followed by a channel regrown by metal–organic chemical vapor deposition. For samples with Al ion implantation of multiple energies of 140 keV (dose: 1.4 × 10{sup 14} cm{sup −2}) and 90 keV (dose: 1 × 10{sup 14} cm{sup −2}), the OFF-state leakage current is decreased by more than 3 orders and the breakdown voltage is enhanced by nearly 6 times compared to the samples without Al ion implantation. Besides, little degradation of electrical properties of the 2D electron gas channel is observed where the maximum drain current I{sub DSmax} at a gate voltage of 3 V was 701 mA/mm and the maximum transconductance g{sub mmax} was 83 mS/mm.

  18. Extracting and focusing of surface plasmon polaritons inside finite asymmetric metal/insulator/metal structure at apex of optical fiber by subwavelength holes

    Science.gov (United States)

    Oshikane, Yasushi; Murai, Kensuke; Nakano, Motohiro

    2013-09-01

    We have been studied a finite asymmetric metal-insulator-metal (MIM) structure on glass plate for near-future visible light communication (VLC) system with white LED illuminations in the living space (DOI: 10.1117/12.929201). The metal layers are vacuum-evaporated thin silver (Ag) films (around 50 nm and 200 nm, respectively), and the insulator layer (around 150 nm) is composed of magnesium fluoride (MgF2). A characteristic narrow band filtering of the MIM structure at visible region might cause a confinement of intense surface plasmon polaritons (SPPs) at specific monochromatic frequency inside a subwavelength insulator layer of the MIM structure. Central wavelength and depth of such absorption dip in flat spectral reflectance curve is controlled by changing thicknesses of both insulator and thinner metal layers. On the other hand, we have proposed a twin-hole pass-through wave guide for SPPs in thick Ag film (DOI: 10.1117/12.863587). At that time, the twin-hole converted a incoming plane light wave into a pair of channel plasmon polaritons (CPPs), and united them at rear surface of the Ag film. This research is having an eye to extract, guide, and focus the SPPs through a thicker metal layer of the MIM with FIBed subwavelength pass-through holes. The expected outcome is a creation of noble, monochromatic, and tunable fiber probe for scanning near-field optical microscopes (SNOMs) with intense white light sources. Basic experimental and FEM simulation results will be presented.

  19. Experimental and modeling study of the capacitance-voltage characteristics of metal-insulator-semiconductor capacitor based on pentacene/parylene

    KAUST Repository

    Wondmagegn, Wudyalew T.

    2011-04-01

    The capacitance-voltage (C-V) characteristics of metal-insulator- semiconductor (MIS) capacitors consisting of pentacene as an organic semiconductor and parylene as the dielectric have been investigated by experimental, analytical, and numerical analysis. The device simulation was performed using two-dimensional drift-diffusion methods taking into account the Poole-Frenkel field-dependent mobility. Pentacene bulk defect states and fixed charge density at the semiconductor/insulator interface were incorporated into the simulation. The analysis examined pentacene/parylene interface characteristics for various parylene thicknesses. For each thickness, the corresponding flat band voltage extracted from the C-V plot of the MIS structure was more negative than - 2.4 V. From the flat band voltage the existence of a significant mismatch between the work functions of the gate electrode and pentacene active material has been identified. Experimental and simulation results suggest the existence of interface charge density on the order of 3 × 1011 q/cm2 at the insulator/semiconductor interface. The frequency dispersion characteristics of the device are also presented and discussed. © 2011 Elsevier B.V.

  20. Ion beam sputter deposited TiAlN films for metal-insulator-metal (Ba,Sr)TiO{sub 3} capacitor application

    Energy Technology Data Exchange (ETDEWEB)

    Lee, S.-Y. [Department of Materials Science and Engineering, National Cheng Kung University, No. 1, Ta-Hsueh Road, Tainan, Taiwan (China); Wang, S.-C. [Department of Mechanical Engineering, Southern Taiwan University of Technology, No. 1, Nantai St, Yung-Kang City, Tainan, Taiwan (China); Chen, J.-S. [Department of Materials Science and Engineering, National Cheng Kung University, No. 1, Ta-Hsueh Road, Tainan, Taiwan (China); Huang, J.-L. [Department of Materials Science and Engineering, National Cheng Kung University, No. 1, Ta-Hsueh Road, Tainan, Taiwan (China)], E-mail: jlh888@mail.ncku.edu.tw

    2008-09-01

    The present study evaluated the feasibility of TiAlN films deposited using the ion beam sputter deposition (IBSD) method for metal-insulator-metal (MIM) (Ba,Sr)TiO{sub 3} (BST) capacitors. The BST films were crystallized at temperatures above 650 deg. C. TiAlN films deposited using the IBSD method were found having smooth surface and low electrical resistivity at high temperature conditions. TiAlN films showed a good diffusion barrier property against BST components. The J-E (current density-electric field) characteristics of Al/BST/TiAlN capacitors were good, with a high break down electric field of {+-} 2.5 MV/cm and a leakage current density of about 1 x 10{sup -5} A/cm{sup 2} at an applied field of {+-} 0.5 MV/cm. Thermal stress and lateral oxidation that occurred at the interface damaged the capacitor stacking structure. Macro holes that dispersed on the films resulted in higher leakage current and inconsistent J-E characteristics. Vacuum annealing with lower heating rate and furnace cooling, and a Ti-Al adhesion layer between TiAlN and the SiO{sub 2}/Si substrate can effectively minimize the stress effect. TiAlN film deposited using IBSD can be considered as a potential electrode and diffusion barrier material for MIM BST capacitors.

  1. Plasma Deposited SiO2 for Planar Self-Aligned Gate Metal-Insulator-Semiconductor Field Effect Transistors on Semi-Insulating InP

    Science.gov (United States)

    Tabory, Charles N.; Young, Paul G.; Smith, Edwyn D.; Alterovitz, Samuel A.

    1994-01-01

    Metal-insulator-semiconductor (MIS) field effect transistors were fabricated on InP substrates using a planar self-aligned gate process. A 700-1000 A gate insulator of Si02 doped with phosphorus was deposited by a direct plasma enhanced chemical vapor deposition at 400 mTorr, 275 C, 5 W, and power density of 8.5 MW/sq cm. High frequency capacitance-voltage measurements were taken on MIS capacitors which have been subjected to a 700 C anneal and an interface state density of lxl0(exp 11)/eV/cq cm was found. Current-voltage measurements of the capacitors show a breakdown voltage of 107 V/cm and a insulator resistivity of 10(exp 14) omega cm. Transistors were fabricated on semi-insulating InP using a standard planar self-aligned gate process in which the gate insulator was subjected to an ion implantation activation anneal of 700 C. MIS field effect transistors gave a maximum extrinsic transconductance of 23 mS/mm for a gate length of 3 microns. The drain current drift saturated at 87.5% of the initial current, while reaching to within 1% of the saturated value after only 1x10(exp 3). This is the first reported viable planar InP self-aligned gate transistor process reported to date.

  2. Numerical studies on a plasmonic temperature nanosensor based on a metal-insulator-metal ring resonator structure for optical integrated circuit applications

    Science.gov (United States)

    Al-mahmod, Md. Jubayer; Hyder, Rakib; Islam, Md Zahurul

    2017-07-01

    A nanosensor, based on a metal-insulator-metal (MIM) plasmonic ring resonator, is proposed for potential on-chip temperature sensing and its performance is evaluated numerically. The sensor components can be fabricated by using planar processes on a silicon substrate, making its manufacturing compatible to planar electronic fabrication technology. The sensor, constructed using silver as the metal rings and a thermo-optic liquid ethanol film between the metal layers, is capable of sensing temperature with outstanding optical sensitivity, as high as -0.53 nm/°C. The resonance wavelength is found to be highly sensitive to the refractive index of the liquid dielectric film. The resonance peak can be tuned according to the requirement of intended application by changing the radii of the ring resonator geometries in the design phase. The compact size, planar and silicon-based design, and very high resolutions- these characteristics are expected to make this sensor technology a preferred choice for lab-on-a-chip applications, as compared to other contemporary sensors.

  3. Quasi-Two-Dimensional h-BN/β-Ga2O3 Heterostructure Metal-Insulator-Semiconductor Field-Effect Transistor.

    Science.gov (United States)

    Kim, Janghyuk; Mastro, Michael A; Tadjer, Marko J; Kim, Jihyun

    2017-06-28

    β-gallium oxide (β-Ga 2 O 3 ) and hexagonal boron nitride (h-BN) heterostructure-based quasi-two-dimensional metal-insulator-semiconductor field-effect transistors (MISFETs) were demonstrated by integrating mechanical exfoliation of (quasi)-two-dimensional materials with a dry transfer process, wherein nanothin flakes of β-Ga 2 O 3 and h-BN were utilized as the channel and gate dielectric, respectively, of the MISFET. The h-BN dielectric, which has an extraordinarily flat and clean surface, provides a minimal density of charged impurities on the interface between β-Ga 2 O 3 and h-BN, resulting in superior device performances (maximum transconductance, on/off ratio, subthreshold swing, and threshold voltage) compared to those of the conventional back-gated configurations. Also, double-gating of the fabricated device was demonstrated by biasing both top and bottom gates, achieving the modulation of the threshold voltage. This heterostructured wide-band-gap nanodevice shows a new route toward stable and high-power nanoelectronic devices.

  4. Ion beam sputter deposited TiAlN films for metal-insulator-metal (Ba,Sr)TiO3 capacitor application

    International Nuclear Information System (INIS)

    Lee, S.-Y.; Wang, S.-C.; Chen, J.-S.; Huang, J.-L.

    2008-01-01

    The present study evaluated the feasibility of TiAlN films deposited using the ion beam sputter deposition (IBSD) method for metal-insulator-metal (MIM) (Ba,Sr)TiO 3 (BST) capacitors. The BST films were crystallized at temperatures above 650 deg. C. TiAlN films deposited using the IBSD method were found having smooth surface and low electrical resistivity at high temperature conditions. TiAlN films showed a good diffusion barrier property against BST components. The J-E (current density-electric field) characteristics of Al/BST/TiAlN capacitors were good, with a high break down electric field of ± 2.5 MV/cm and a leakage current density of about 1 x 10 -5 A/cm 2 at an applied field of ± 0.5 MV/cm. Thermal stress and lateral oxidation that occurred at the interface damaged the capacitor stacking structure. Macro holes that dispersed on the films resulted in higher leakage current and inconsistent J-E characteristics. Vacuum annealing with lower heating rate and furnace cooling, and a Ti-Al adhesion layer between TiAlN and the SiO 2 /Si substrate can effectively minimize the stress effect. TiAlN film deposited using IBSD can be considered as a potential electrode and diffusion barrier material for MIM BST capacitors

  5. Device characteristics of antenna-coupled metal-insulator-metal diodes (rectenna) using Al2O3, TiO2, and Cr2O3 as insulator layer for energy harvesting applications

    Science.gov (United States)

    Inac, Mesut; Shafique, Atia; Ozcan, Meric; Gurbuz, Yasar

    2015-09-01

    Antenna-coupled metal-insulator-metal devices are most potent candidate for future energy harvesting devices. The reason for that they are ultra-high speed devices that can rectify the electromagnetic radiation at high frequencies. In addition to their speed, they are also small devices that can have more number of devices in unit area. In this work, it is aimed design and develop a device which can harvest and detect IR radiation.

  6. Simultaneous valence shift of Pr and Tb ions at the spin-state transition in (Pr.sub.1-y./sub.Tb.sub.y./sub.).sub.0.7./sub.Ca.sub.0.3./sub.CoO.sub.3./sub..

    Czech Academy of Sciences Publication Activity Database

    Fujishiro, H.; Naito, T.; Takeda, D.; Yoshida, N.; Watanabe, T.; Nitta, K.; Hejtmánek, Jiří; Knížek, Karel; Jirák, Zdeněk

    2013-01-01

    Roč. 87, č. 15 (2013), "155153-1"-"155153-7" ISSN 1098-0121 R&D Projects: GA ČR(CZ) GAP204/11/0713 Institutional support: RVO:68378271 Keywords : metal-insulator transitions and other electronic transitions * X-ray absorption spectra * spin crossover Subject RIV: BE - Theoretical Physics Impact factor: 3.664, year: 2013

  7. Magnetism variations and susceptibility hysteresis at the metal-insulator phase transition temperature of VO2 in a composite film containing vanadium and tungsten oxides

    CSIR Research Space (South Africa)

    Akande, AA

    2015-02-01

    Full Text Available We report on the magnetic property of 0.67–WO3+0.33–VOx mixture film deposit on the corning glass substrate using the chemical sol–gel and atmospheric pressure chemical vapour deposition (APCVD) methods. The XRD and Raman spectroscopy confirm...

  8. Metal-insulator transition at the LaAlO3/SrTiO3 interface revisited: A hybrid functional study

    KAUST Repository

    Cossu, Fabrizio; Eyert, V.; Schwingenschlö gl, Udo

    2013-01-01

    We investigate the electronic properties of the LaAlO3/SrTiO3 interface using density functional theory. In contrast to previous studies, which relied on (semi-)local functionals and the GGA+U method, we here use a recently developed hybrid

  9. Metal-insulator transition at the LaAlO3/SrTiO3 interface revisited: A hybrid functional study

    KAUST Repository

    Cossu, Fabrizio

    2013-07-17

    We investigate the electronic properties of the LaAlO3/SrTiO3 interface using density functional theory. In contrast to previous studies, which relied on (semi-)local functionals and the GGA+U method, we here use a recently developed hybrid functional to determine the electronic structure. This approach offers the distinct advantage of accessing both the metallic and insulating multilayers on a parameter-free equal footing. As compared to calculations based on semilocal GGA functionals, our hybrid functional calculations lead to a considerably increased band gap for the insulating systems. The details of the electronic structure show substantial deviations from those obtained by GGA calculations. This casts severe doubts on all previous results based on semilocal functionals. In particular, corrections using rigid band shifts (“scissors operator”) cannot lead to valid results.

  10. Separation of intra- and intergranular magnetotransport properties in nanocrystalline diamond films on the metallic side of the metal-insulator transition

    Czech Academy of Sciences Publication Activity Database

    Janssens, S.D.; Pobeidinskas, P.; Vacík, Jiří; Petráková, Vladimíra; Ruttens, B.; D´Haen, J.; Nesládek, M.; Haenen, K.; Wagner, P.

    2011-01-01

    Roč. 13, č. 9 (2011), 083008/1-083008/17 ISSN 1367-2630 R&D Projects: GA AV ČR(CZ) KAN400480701 Institutional research plan: CEZ:AV0Z10480505; CEZ:AV0Z10100521 Keywords : Nanocrystalline diamond * Boron * Magnetotransport Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.177, year: 2011

  11. Separation of intra- and intergranular magnetotransport properties in nanocrystalline diamond films on the metallic side of the metal-insulator transition

    International Nuclear Information System (INIS)

    Janssens, S D; Pobedinskas, P; Ruttens, B; D'Haen, J; Nesladek, M; Haenen, K; Wagner, P; Vacik, J; Petrakova, V

    2011-01-01

    A systematic study on the morphology and electronic properties of thin heavily boron-doped nanocrystalline diamond (NCD) films is presented. The films have nominally the same thickness (∼150 nm) and are grown with a fixed B/C ratio (5000 ppm) but with different C/H ratios (0.5-5%) in the gas phase. The morphology of the films is investigated by x-ray diffraction and atomic force microscopy measurements, which confirm that lower C/H ratios lead to a larger average grain size. Magnetotransport measurements reveal a decrease in resistivity and a large increase in mobility, approaching the values obtained for single-crystal diamond as the average grain size of the films increases. In all films, the temperature dependence of resistivity decreases with larger grains and the charge carrier density and mobility are thermally activated. It is possible to separate the intra- and intergrain contributions for resistivity and mobility, which indicates that in these complex systems Matthiessen's rule is followed. The concentration of active charge carriers is reduced when the boron-doped NCD is grown with a lower C/H ratio. This is due to lower boron incorporation, which is confirmed by neutron depth profiling.

  12. The giant piezoelectric effect: electric field induced monoclinic phase or piezoelectric distortion of the rhombohedral parent?

    International Nuclear Information System (INIS)

    Kisi, E H; Piltz, R O; Forrester, J S; Howard, C J

    2003-01-01

    Lead zinc niobate-lead titanate (PZN-PT) single crystals show very large piezoelectric strains for electric fields applied along the unit cell edges e.g. [001] R . It has been widely reported that this effect is caused by an electric field induced phase transition from rhombohedral (R3m) to monoclinic (Cm or Pm) symmetry in an essentially continuous manner. Group theoretical analysis using the computer program ISOTROPY indicates phase transitions between R3m and Cm (or Pm) must be discontinuous under Landau theory. An analysis of the symmetry of a strained unit cell in R3m and a simple expansion of the piezoelectric strain equation indicate that the piezoelectric distortion due to an electric field along a cell edge in rhombohedral perovskite-based ferroelectrics is intrinsically monoclinic (Cm), even for infinitesimal electric fields. PZN-PT crystals have up to nine times the elastic compliance of other piezoelectric perovskites and it might be expected that the piezoelectric strains are also very large. A field induced phase transition is therefore indistinguishable from the piezoelectric distortion and is neither sufficient nor necessary to understand the large piezoelectric response of PZN-PT

  13. Electric-field-induced magnetic domain writing in a Co wire

    Science.gov (United States)

    Tanaka, Yuki; Hirai, Takamasa; Koyama, Tomohiro; Chiba, Daichi

    2018-05-01

    We have demonstrated that the local magnetization in a Co microwire can be switched by an application of a gate voltage without using any external magnetic fields. The electric-field-induced reversible ferromagnetic phase transition was used to realize this. An internal stray field from a ferromagnetic gate electrode assisted the local domain reversal in the Co wire. This new concept of electrical domain switching may be useful for dramatically reducing the power consumption of writing information in a magnetic racetrack memory, in which a shift of a magnetic domain by electric current is utilized.

  14. Strain- and electric field-induced band gap modulation in nitride nanomembranes

    International Nuclear Information System (INIS)

    Amorim, Rodrigo G; Zhong Xiaoliang; Mukhopadhyay, Saikat; Pandey, Ravindra; Rocha, Alexandre R; Karna, Shashi P

    2013-01-01

    The hexagonal nanomembranes of the group III-nitrides are a subject of interest due to their novel technological applications. In this paper, we investigate the strain- and electric field-induced modulation of their band gaps in the framework of density functional theory. For AlN, the field-dependent modulation of the bandgap is found to be significant whereas the strain-induced semiconductor-metal transition is predicted for GaN. A relatively flat conduction band in AlN and GaN nanomembranes leads to an enhancement of their electronic mobility compared to that of their bulk counterparts. (paper)

  15. Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Tian-Li, E-mail: Tian-Li.Wu@imec.be; Groeseneken, Guido [imec, Kapeldreef 75, 3001 Leuven (Belgium); Department of Electrical Engineering, KU Leuven, Leuven (Belgium); Marcon, Denis; De Jaeger, Brice; Lin, H. C.; Franco, Jacopo; Stoffels, Steve; Van Hove, Marleen; Decoutere, Stefaan [imec, Kapeldreef 75, 3001 Leuven (Belgium); Bakeroot, Benoit [imec, Kapeldreef 75, 3001 Leuven (Belgium); Centre for Microsystems Technology, Ghent University, 9052 Gent (Belgium); Roelofs, Robin [ASM, Kapeldreef 75, 3001 Leuven (Belgium)

    2015-08-31

    In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-g{sub m}), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si{sub 3}N{sub 4}, Rapid Thermal Chemical Vapor Deposition Si{sub 3}N{sub 4}, and Atomic Layer Deposition (ALD) Al{sub 2}O{sub 3}) for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. From these measurements, the interface state density (D{sub it}), the amount of border traps, and the threshold voltage (V{sub TH}) shift during a positive gate bias stress can be obtained. The results show that the V{sub TH} shift during a positive gate bias stress is highly correlated to not only interface states but also border traps in the dielectric. A physical model is proposed describing that electrons can be trapped by both interface states and border traps. Therefore, in order to minimize the V{sub TH} shift during a positive gate bias stress, the gate dielectric needs to have a lower interface state density and less border traps. However, the results also show that the commonly used frequency dependent conductance analysis technique to extract D{sub it} needs to be cautiously used since the resulting value might be influenced by the border traps and, vice versa, i.e., the g{sub m} dispersion commonly attributed to border traps might be influenced by interface states.

  16. Silicon dioxide with a silicon interfacial layer as an insulating gate for highly stable indium phosphide metal-insulator-semiconductor field effect transistors

    Science.gov (United States)

    Kapoor, V. J.; Shokrani, M.

    1991-01-01

    A novel gate insulator consisting of silicon dioxide (SiO2) with a thin silicon (Si) interfacial layer has been investigated for high-power microwave indium phosphide (InP) metal-insulator-semiconductor field effect transistors (MISFETs). The role of the silicon interfacial layer on the chemical nature of the SiO2/Si/InP interface was studied by high-resolution X-ray photoelectron spectroscopy. The results indicated that the silicon interfacial layer reacted with the native oxide at the InP surface, thus producing silicon dioxide, while reducing the native oxide which has been shown to be responsible for the instabilities in InP MISFETs. While a 1.2-V hysteresis was present in the capacitance-voltage (C-V) curve of the MIS capacitors with silicon dioxide, less than 0.1 V hysteresis was observed in the C-V curve of the capacitors with the silicon interfacial layer incorporated in the insulator. InP MISFETs fabricated with the silicon dioxide in combination with the silicon interfacial layer exhibited excellent stability with drain current drift of less than 3 percent in 10,000 sec, as compared to 15-18 percent drift in 10,000 sec for devices without the silicon interfacial layer. High-power microwave InP MISFETs with Si/SiO2 gate insulators resulted in an output power density of 1.75 W/mm gate width at 9.7 GHz, with an associated power gain of 2.5 dB and 24 percent power added efficiency.

  17. Effect of annealing temperature on the electrical properties of Au/Ta{sub 2}O{sub 5}/n-GaN metal-insulator-semiconductor (MIS) structure

    Energy Technology Data Exchange (ETDEWEB)

    Prasanna Lakshmi, B.; Rajagopal Reddy, V.; Janardhanam, V. [Sri Venkateswara University, Department of Physics, Tirupati (India); Siva Pratap Reddy, M.; Lee, Jung-Hee [Kyungpook National University, School of Electrical Engineering and Computer Science, Daegu (Korea, Republic of)

    2013-11-15

    We report on the effect of an annealing temperature on the electrical properties of Au/Ta{sub 2}O{sub 5}/n-GaN metal-insulator-semiconductor (MIS) structure by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The measured Schottky barrier height ({Phi} {sub bo}) and ideality factor n values of the as-deposited Au/Ta{sub 2}O{sub 5}/n-GaN MIS structure are 0.93 eV (I-V) and 1.19. The barrier height (BH) increases to 1.03 eV and ideality factor decreases to 1.13 upon annealing at 500 {sup circle} C for 1 min under nitrogen ambient. When the contact is annealed at 600 {sup circle} C, the barrier height decreases and the ideality factor increases to 0.99 eV and 1.15. The barrier heights obtained from the C-V measurements are higher than those obtained from I-V measurements, and this indicates the existence of spatial inhomogeneity at the interface. Cheung's functions are also used to calculate the barrier height ({Phi} {sub bo}), ideality factor (n), and series resistance (R{sub s}) of the Au/Ta{sub 2}O{sub 5}/n-GaN MIS structure. Investigations reveal that the Schottky emission is the dominant mechanism and the Poole-Frenkel emission occurs only in the high voltage region. The energy distribution of interface states is determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. It is observed that the density value of interface states for the annealed samples with interfacial layer is lower than that of the density value of interface states of the as-deposited sample. (orig.)

  18. Theory of field induced incommensurability: CsFeCl3

    DEFF Research Database (Denmark)

    Lindgård, Per-Anker

    1986-01-01

    Using correlation theory for the singlet-doublet magnet CsFeCl3 in a magnetic field, a field induced incommensurate ordering along K-M is predicted without invoking dipolar effects. A fully self-consistent RPA theory gives Hc=44 kG in agreement with experiments at T=1.3K. Correlation and dipolar...

  19. Field-Induced Superconductivity in Electric Double Layer Transistors

    NARCIS (Netherlands)

    Ueno, Kazunori; Shimotani, Hidekazu; Yuan, Hongtao; Ye, Jianting; Kawasaki, Masashi; Iwasa, Yoshihiro

    Electric field tuning of superconductivity has been a long-standing issue in solid state physics since the invention of the field-effect transistor (FET) in 1960. Owing to limited available carrier density in conventional FET devices, electric-field-induced superconductivity was believed to be

  20. TRANSIT

    Indian Academy of Sciences (India)

    First page Back Continue Last page Overview Graphics. TRANSIT. SYSTEM: DETERMINE 2D-POSITION GLOBALLY BUT INTERMITTENT (POST-FACTO). IMPROVED ACCURACY. PRINCIPLE: POLAR SATELLITES WITH INNOVATIONS OF: GRAVITY-GRADIENT ATTITUDE CONTROL; DRAG COMPENSATION. WORKS ...

  1. Magnetic-field induced semimetal in topological crystalline insulator thin films

    International Nuclear Information System (INIS)

    Ezawa, Motohiko

    2015-01-01

    We investigate electromagnetic properties of a topological crystalline insulator (TCI) thin film under external electromagnetic fields. The TCI thin film is a topological insulator indexed by the mirror-Chern number. It is demonstrated that the gap closes together with the emergence of a pair of gapless cones carrying opposite chirarities by applying in-plane magnetic field. A pair of gapless points have opposite vortex numbers. This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. We thus present an a magnetic-field induced semimetal–semiconductor transition in 2D material. This is a giant-magnetoresistance, where resistivity is controlled by magnetic field. Perpendicular electric field is found to shift the gapless points and also renormalize the Fermi velocity in the direction of the in-plane magnetic field. - Highlights: • The band structure of topological crystalline insulator thin films can be controlled by applying in-plane magnetic field. • At the gap closing magnetic field, a pair of gapless cones carrying opposite chirarities emerge. • A pair of gapless points have opposite vortex numbers. • This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. • A magnetic-field induced semimetal–semiconductor transition occurs in 2D material

  2. Magnetic-field induced semimetal in topological crystalline insulator thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ezawa, Motohiko, E-mail: ezawa@ap.t.u-tokyo.ac.jp

    2015-06-19

    We investigate electromagnetic properties of a topological crystalline insulator (TCI) thin film under external electromagnetic fields. The TCI thin film is a topological insulator indexed by the mirror-Chern number. It is demonstrated that the gap closes together with the emergence of a pair of gapless cones carrying opposite chirarities by applying in-plane magnetic field. A pair of gapless points have opposite vortex numbers. This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. We thus present an a magnetic-field induced semimetal–semiconductor transition in 2D material. This is a giant-magnetoresistance, where resistivity is controlled by magnetic field. Perpendicular electric field is found to shift the gapless points and also renormalize the Fermi velocity in the direction of the in-plane magnetic field. - Highlights: • The band structure of topological crystalline insulator thin films can be controlled by applying in-plane magnetic field. • At the gap closing magnetic field, a pair of gapless cones carrying opposite chirarities emerge. • A pair of gapless points have opposite vortex numbers. • This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. • A magnetic-field induced semimetal–semiconductor transition occurs in 2D material.

  3. Electric-field-induced paraelectric to ferroelectric phase transformation in prototypical polycrystalline BaTiO3

    International Nuclear Information System (INIS)

    Wang, Zhiyang; Hinterstein, Manuel; Daniels, John E.; Webber, Kyle G.; Hudspeth, Jessica M.

    2014-01-01

    An electric-field-induced paraelectric cubic to ferroelectric tetragonal phase transformation has been directly observed in prototypical polycrystalline BaTiO 3 at temperatures above the Curie point (T C ) using in situ high-energy synchrotron X-ray diffraction. The transformation persisted to a maximum temperature of 4 °C above T C . The nature of the observed field-induced transformation and the resulting development of domain texture within the induced phase were dependent on the proximity to the transition temperature, corresponding well to previous macroscopic measurements. The transition electric field increased with increasing temperature above T C , while the magnitude of the resultant tetragonal domain texture at the maximum electric field (4 kV mm −1 ) decreased at higher temperatures. These results provide insights into the phase transformation behavior of a prototypical ferroelectric and have important implications for the development of future large-strain phase-change actuator materials.

  4. Conduction and rectification in NbO x - and NiO-based metal-insulator-metal diodes

    Energy Technology Data Exchange (ETDEWEB)

    Osgood, Richard M.; Giardini, Stephen; Carlson, Joel; Periasamy, Prakash; Guthrey, Harvey; O' Hayre, Ryan; Chin, Matthew; Nichols, Barbara; Dubey, Madan; Fernandes, Gustavo; Kim, Jin Ho; Xu, Jimmy; Parilla, Philip; Berry, Joseph; Ginley, David

    2016-09-01

    Conduction and rectification in nanoantenna-coupled NbOx- and NiO-based metal-insulator-metal (MIM) diodes ('nanorectennas') are studied by comparing new theoretical predictions with the measured response of nanorectenna arrays. A new quantum mechanical model is reported and agrees with measurements of current-voltage (I-V) curves, over 10 orders of magnitude in current density, from [NbOx(native)-Nb2O5]- and NiO-based samples with oxide thicknesses in the range of 5-36 nm. The model, which introduces new physics and features, including temperature, electron effective mass, and image potential effects using the pseudobarrier technique, improves upon widely used earlier models, calculates the MIM diode's I-V curve, and predicts quantitatively the rectification responsivity of high frequency voltages generated in a coupled nanoantenna array by visible/near-infrared light. The model applies both at the higher frequencies, when high-energy photons are incident, and at lower frequencies, when the formula for classical rectification, involving derivatives of the I-V curve, may be used. The rectified low-frequency direct current is well-predicted in this work's model, but not by fitting the experimentally measured I-V curve with a polynomial or by using the older Simmons model (as shown herein). By fitting the measured I-V curves with our model, the barrier heights in Nb-(NbOx(native)-Nb2O5)-Pt and Ni-NiO-Ti/Ag diodes are found to be 0.41/0.77 and 0.38/0.39 eV, respectively, similar to literature reports, but with effective mass much lower than the free space value. The NbOx (native)-Nb2O5 dielectric properties improve, and the effective Pt-Nb2O5 barrier height increases as the oxide thickness increases. An observation of direct current of ~4 nA for normally incident, focused 514 nm continuous wave laser beams are reported, similar in magnitude to recent reports. This measured direct current is compared to the prediction for rectified direct current

  5. Investigations on magnetic field induced optical transparency in magnetic nanofluids

    Science.gov (United States)

    Mohapatra, Dillip Kumar; Philip, John

    2018-02-01

    We study the magnetic field induced optical transparency and its origin in magnetic nanoemulsion of droplets of average size ∼200 nm containing superparamagnetic iron oxide nanoparticles. Beyond a certain volume fraction (Φ > 0.0021) of magnetic nanoemulsion and a critical magnetic field (Hc1), the transmitted light intensity increases drastically and reaches a maximum at another critical magnetic field (Hc2), beyond which the transmitted light intensity decreases and reaches a plateau. Interestingly, the transmitted light intensity at Hc2 is found to increase linearly with Φ and the critical magnetic fields Hc1 and Hc2 follow power law decay with Φ (i.e. Hc ∼ Φ-x), with exponents 0.48 and 0.27, respectively. The light intensity recovers to its initial value when the magnetic field is switched off, indicating the perfect reversibility of the field induced transparency process. The observed straight line scattered patterns above Hc2, on a screen placed perpendicular to the incident beam, confirms the formation of rod like anisotropic nanostructures perpendicular to the direction of light propagation. The magneto-optical measurements in the emulsion confirm that the observed field induced transparency in magnetic emulsions for Φ > 0.0021 is due to the optical birefringence caused by the rod like nanostructures. The reduced birefringence is found to be proportional to the square of the applied magnetic field. This finding offers several possibilities in using magnetic nanofluids in tunable optical devices.

  6. Electric field induced instabilities in free emulsion films

    Energy Technology Data Exchange (ETDEWEB)

    Tchoukov, P.; Dabros, T. [Natural Resources Canada, Devon, AB (Canada); Mostowfi, F. [Schlumberger DBR Technology Center, Edmonton, AB (Canada); Panchev, N. [Champion Technologies Inc., Houston, TX (United States); Czarnecki, J. [Alberta Univ., Edmonton, AB (Canada). Dept. of Chemical and Materials Engineering

    2009-07-01

    This presentation reported on a study that investigated the mechanism of electric field-induced breakdown of free emulsion films. Instability patterns were observed on the plane of a water-oil-water film following electric polarization. The length-scales of the instabilities were measured by analyzing images immediately after applying the electric field. Linear stability analysis was used to calculate the theoretical dominant wavelengths. The calculated values were found to be in good agreement with measured values. The films were formed in a thin film apparatus modified so that the oil film separated 2 aqueous phase compartments, each in contact with a platinum electrode. This enabled the measurement of disjoining pressure while applying the electric field to the film. It was concluded that breakdown of thin films induced by electric field has many applications, including electrostatic de-emulsification/desalination of crude oil and emulsion stability measurements. It was concluded that electroporation and dielectric breakdown may be responsible for electric field-induced breakdown. This study also presented evidence of an increase in electric field-induced instabilities in emulsion films resulting in rupture. tabs., figs.

  7. High-pressure electron-resonance studies of electronic, magnetic, and structural phase transitions. Progress report

    International Nuclear Information System (INIS)

    Pifer, J.H.; Croft, M.C.

    1983-01-01

    Research is described in development of a high-pressure electron-resonance probe capable of operating down to 1.5 0 K temperatures. The apparatus has been used to measure the EPR of a sample of DPPH at room temperature and zero pressure. EPR has been used to measure valence field instabilities in alloy systems. Studies have been done on metal-insulator transitions at high pressure, and are briefly described

  8. Universal Fluctuations in Spectra of Disordered Systems at the Anderson Transition

    OpenAIRE

    Zharekeshev, Isa Kh.; Kramer, Bernhard

    1995-01-01

    Using the level--spacing distribution and the total probability function of the numbers of levels in a given energy interval we analyze the crossover of the level statistics between the delocalized and the localized regimes. By numerically calculating the electron spectra of systems of up to $32^3$ lattice sites described by the Anderson Hamiltonian it is shown that the distribution $P(s)$ of neighboring spacings is {\\em scale- independent} at the metal-insulator transition. For large spacing...

  9. Electric-field-induced modification in Curie temperature of Co monolayer on Pt(111)

    Science.gov (United States)

    Nakamura, Kohji; Oba, Mikito; Akiyama, Toru; Ito, Tomonori; Weinert, Michael

    2015-03-01

    Magnetism induced by an external electric field (E-field) has received much attention as a potential approach for controlling magnetism at the nano-scale with the promise of ultra-low energy power consumption. Here, the E-field-induced modification of the Curie temperature for a prototypical transition-metal thin layer of a Co monolayer on Pt(111) is investigated by first-principles calculations by using the full-potential linearized augmented plane wave method that treats spin-spiral structures in an E-field. An applied E-field modifies the magnon (spin-spiral formation) energies by a few meV, which leads to a modification of the exchange pair interaction parameters within the classical Heisenberg model. With inclusion of the spin-orbit coupling (SOC), the magnetocrystalline anisotropy and the Dzyaloshinskii-Morita interaction are obtained by the second variation SOC method. An E-field-induced modification of the Curie temperature is demonstrated by Monte Carlo simulations, in which a change in the exchange interaction is found to play a key role.

  10. Quantum phase transitions of a disordered antiferromagnetic topological insulator

    Science.gov (United States)

    Baireuther, P.; Edge, J. M.; Fulga, I. C.; Beenakker, C. W. J.; Tworzydło, J.

    2014-01-01

    We study the effect of electrostatic disorder on the conductivity of a three-dimensional antiferromagnetic insulator (a stack of quantum anomalous Hall layers with staggered magnetization). The phase diagram contains regions where the increase of disorder first causes the appearance of surface conduction (via a topological phase transition), followed by the appearance of bulk conduction (via a metal-insulator transition). The conducting surface states are stabilized by an effective time-reversal symmetry that is broken locally by the disorder but restored on long length scales. A simple self-consistent Born approximation reliably locates the boundaries of this so-called "statistical" topological phase.

  11. Magnetic-field-induced Quantum Phase in S = 1/2 Frustrated Trellis Lattice

    Science.gov (United States)

    Yamaguchi, Hironori; Yoshizawa, Daichi; Kida, Takanori; Hagiwara, Masayuki; Matsuo, Akira; Kono, Yohei; Sakakibara, Toshiro; Tamekuni, Yusuke; Miyagai, Hirotsugu; Hosokoshi, Yuko

    2018-04-01

    We present a new model compound of an S = 1/2 frustrated system with ferromagnetic interaction composed of verdazyl radical β-2,3,5-Cl3-V. The ab initio molecular orbital calculation indicates the formation of an S = 1/2 trellis lattice in which zigzag chains and ladders with ferromagnetic rung interaction are two-dimensionally coupled. We observe a field-induced successive phase transition and an unconventional change in the magnetization curve near the saturation field, accompanied by T2 dependence on the magnetic specific heat. A two-dimensional spin-nematic state attributed to the ferromagnetic rung interactions is a possible candidate for the ground state in high-field regions.

  12. NMR Study of the S=1/2 Quantum Kagome Lattice Antiferromagnet [Cu_3(titmb)_2(CH_3CO_2)_6]・H_2O(Frustrated Systems, Field-Induced Phase Transitions and Dynamics in Quantum Spin Systems)

    OpenAIRE

    Satoru, MAEGAWA; Kenji, YOSHIOKA; Shinichi, KAWAHARA; Akira, OYAMADA; Kenichi, FUJITA; Ryohei, YAMAGUCHI; Graduate School of Human and Environmental Studies, Kyoto University; Graduate School of Human and Environmental Studies, Kyoto University; Graduate School of Human and Environmental Studies, Kyoto University; Graduate School of Human and Environmental Studies, Kyoto University; Graduate School of Human and Environmental Studies, Kyoto University; Graduate School of Human and Environmental Studies, Kyoto University

    2005-01-01

    A quantum kagome lattice magnet, [Cu_3(titmb)_2(CH_3CO_2)_6]・H_2O with s=1/2 has been studied by magnetization and NMR experiments. No magnetic phase transition was observed down to 180mK. The spin-lattice relaxation rate T^_1 above 20K is almost temperature independent, while below 10K the rates decrease sharply as the temperature is decreased, and can be described as T^_1=B exp(-△/κ_BT). The field dependence on the energy gap △ has been obtained and is found to show plateaus between 3.2 and...

  13. 1H NMR studies in the regime of the field-induced spin-density wave phases of (TMTSF)2PF6

    International Nuclear Information System (INIS)

    Brown, S.E.; Pieper, M.; Clark, W.G.; Chow, D.S.; Alavi, B.

    1999-01-01

    We report 1 H proton spin-lattice relaxation measurements T 1 -1 on pressurized (TMTSF) 2 PF 6 in high magnetic fields. Maxima in T 1 -1 identify the phase transition to the field-induced spin-density wave (FISDW) state. Fluctuation effects are evident at temperatures above the transition, and vanish continuously in strength as the field is lowered to the critical field B c for the onset of the FISDW cascade. (orig.)

  14. Field-induced optically isotropic state in bent core nematic liquid crystals: unambiguous proof of field-induced optical biaxiality

    International Nuclear Information System (INIS)

    Elamain, Omaima; Komitov, Lachezar; Hegde, Gurumurthy; Fodor-Csorba, Katalin

    2013-01-01

    The behaviour of bent core (BC) nematic liquid crystals was investigated under dc applied electric field. The optically isotropic state of a sample containing BC nematic was observed under application of low dc electric fields. The quality of the dark state when the sample was inserted between two crossed polarizers was found to be superb and it did not change when rotating the sample between the polarizers. The coupling between the net molecular dipole moment and the applied dc electric field was considered as the origin of the out-of-plane switching of the BC molecules resulting in switching from the field-off bright state to the field-on dark state. The field-induced optically isotropic state is an unambiguous proof of the field-induced biaxiality in the BC nematic liquid crystal. A simple model explaining the appearance of the isotropic optical state in BC nematics and the switching of the sample slow axis between three mutually orthogonal directions under dc applied electric field is proposed. (paper)

  15. Experimental demonstration on the ultra-low source/drain resistance by metal-insulator-semiconductor contact structure in In0.53Ga0.47As field-effect transistors

    Directory of Open Access Journals (Sweden)

    M.-H. Liao

    2013-09-01

    Full Text Available In this work, we demonstrate the ultra-low contact resistivity of 6.7 × 10−9 Ω/cm2 by inserting 0.6-nm-ZnO between Al and InGaAs(Si: 1.5 × 1019 cm−3. The metal-insulator-semiconductor tunneling diode with 0.6-nm-ZnO exhibits nearly zero (0.03 eV barrier height. We apply this contact structure on the source/drain of implant-free In0.53Ga0.47As quantum-well metal-oxide-semiconductor field- effect transistors. The excellent on-state performance such as saturation drain current of 3 × 10−4 A/μm and peak transconductance of 1250 μS/μm is obtained which is attributed to the ultra-low source/drain resistance of 190 Ω-μm.

  16. Metal non-metal transitions in doped semiconductors

    International Nuclear Information System (INIS)

    Brezini, A.

    1989-12-01

    A disordered Hubbard model with diagonal disorder is used to examine the electron localization effects associated with both disorder and electron-electron interaction. Extensive results are reported on the ground state properties and compared with other theories. In particular two regimes are observed; when the electron-electron interaction U is greater than the disorder parameter and when is smaller. Furthermore the effect of including conduction-band minima into the calculation of metal-insulator transitions in doped Si and Ge is investigated with use of Berggren approach. Good agreement with experiments are found when both disorder and interactions are included. (author). 37 refs, 7 figs, 3 tabs

  17. Nonlinear absorption dynamics using field-induced surface hopping: zinc porphyrin in water.

    Science.gov (United States)

    Röhr, Merle I S; Petersen, Jens; Wohlgemuth, Matthias; Bonačić-Koutecký, Vlasta; Mitrić, Roland

    2013-05-10

    We wish to present the application of our field-induced surface-hopping (FISH) method to simulate nonlinear absorption dynamics induced by strong nonresonant laser fields. We provide a systematic comparison of the FISH approach with exact quantum dynamics simulations on a multistate model system and demonstrate that FISH allows for accurate simulations of nonlinear excitation processes including multiphoton electronic transitions. In particular, two different approaches for simulating two-photon transitions are compared. The first approach is essentially exact and involves the solution of the time-dependent Schrödinger equation in an extended manifold of excited states, while in the second one only transiently populated nonessential states are replaced by an effective quadratic coupling term, and dynamics is performed in a considerably smaller manifold of states. We illustrate the applicability of our method to complex molecular systems by simulating the linear and nonlinear laser-driven dynamics in zinc (Zn) porphyrin in the gas phase and in water. For this purpose, the FISH approach is connected with the quantum mechanical-molecular mechanical approach (QM/MM) which is generally applicable to large classes of complex systems. Our findings that multiphoton absorption and dynamics increase the population of higher excited states of Zn porphyrin in the nonlinear regime, in particular in solution, provides a means for manipulating excited-state properties, such as transient absorption dynamics and electronic relaxation. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. The giant piezoelectric effect: electric field induced monoclinic phase or piezoelectric distortion of the rhombohedral parent?

    CERN Document Server

    Kisi, E H; Forrester, J S; Howard, C J

    2003-01-01

    Lead zinc niobate-lead titanate (PZN-PT) single crystals show very large piezoelectric strains for electric fields applied along the unit cell edges e.g. [001] sub R. It has been widely reported that this effect is caused by an electric field induced phase transition from rhombohedral (R3m) to monoclinic (Cm or Pm) symmetry in an essentially continuous manner. Group theoretical analysis using the computer program ISOTROPY indicates phase transitions between R3m and Cm (or Pm) must be discontinuous under Landau theory. An analysis of the symmetry of a strained unit cell in R3m and a simple expansion of the piezoelectric strain equation indicate that the piezoelectric distortion due to an electric field along a cell edge in rhombohedral perovskite-based ferroelectrics is intrinsically monoclinic (Cm), even for infinitesimal electric fields. PZN-PT crystals have up to nine times the elastic compliance of other piezoelectric perovskites and it might be expected that the piezoelectric strains are also very large. ...

  19. Ginsburg-Landau equation around the superconductor-insulator transition

    International Nuclear Information System (INIS)

    Ng, T.K.

    1991-01-01

    Based on the scaling theory of localization, we construct a Ginsburg-Landau (GL) equation for superconductors in an arbitrary strength of disordered potential. Using this GL equation, we reexamine the criteria for the superconductor-insulator transition and find that the transition to a localized superconductor can happen on both sides of the (normal) metal-insulator transition, in contrast to a previous prediction by Ma and Lee [Phys. Rev. B 32, 5658 (1985)] that the transition can only be on the insulator side. Furthermore, by comparing our theory with a recent scaling theory of dirty bosons by Fisher et al. [Phys. Rev. Lett. 64, 587 (1990)], we conclude that nontrivial crossover behavior in transport properties may occur in the vicinity of the superconductor-insulator transition

  20. Localized-to-extended-states transition below the Fermi level

    Science.gov (United States)

    Tito, M. A.; Pusep, Yu. A.

    2018-05-01

    Time-resolved photoluminescence is employed to examine a transition from localized to extended electron states below the Fermi level in multiple narrow quantum well GaAs/AlGaAs heterostructures, where disorder was generated by interface roughness. Such a transition resembles the metal-insulator transition profoundly investigated by electric transport measurements. An important distinction distinguishes the localized-to-extended-states transition studied here: it takes place below the Fermi level in an electron system with a constant concentration, which implies unchanging Coulomb correlations. Moreover, for such a localized-to-extended-states transition the temperature is shown to be irrelevant. In the insulating regime the magnetic field was found to cause an additional momentum relaxation which considerably enhanced the recombination rate. Thus, we propose a method to explore the evolution of the localized electron states in a system with a fixed disorder and Coulomb interaction.

  1. Complex Electric-Field Induced Phenomena in Ferroelectric/Antiferroelectric Nanowires

    Science.gov (United States)

    Herchig, Ryan Christopher

    -principles-based modeling of electric-field-induced phenomena in ferroelectric/antiferroelectric nanowires in order to address the aforementioned questions. (Abstract shortened by ProQuest.).

  2. Studying the field induced breakup of acoustically levitated drops

    Science.gov (United States)

    Warschat, C.; Riedel, J.

    2017-10-01

    Coulomb fission of charged droplets (The terms drop and droplet are often used synonymous. Throughout this manuscript, to avoid confusion, the terms drop and droplet will be used for liquid spheres with radii in the millimeter range and the micrometer range, respectively. In our experiments, the first correspond to the parent drop while the latter describes the ejected progeny droplets.) is a well-studied natural phenomenon. Controlled droplet fission is already successfully employed in several technological applications. Still, since the occurring surface rupture relies on the exact understanding and description of the liquid gas boundary, some details are still under debate. Most empirical systematic studies observe falling micrometer droplets passing through the electric field inside a plate capacitor. This approach, although easily applicable and reliable, limits the experimental degrees of freedom regarding the observable time and the maximum size of the drops and can only be performed in consecutive individual observations of different subsequent drops. Here we present a novel setup to study the field induced breakup of acoustically levitated drops. The design does not bear any restrictions towards the temporal window of observation, and allows handling of drops of a tunable radius ranging from 10 μm to several millimeters and a real-time monitoring of one single drop. Our comprehensive study includes a time resolved visual inspection, laser shadowgraphy, laser induced fluorescence imaging, and ambient mass spectrometric interrogation of the nascent Taylor cone. The results shown for a millimeter sized drop, previously inaccessible for Coulomb fission experiments, are mostly comparable with previous results for smaller drops. The major difference is the time scale and the threshold potential of the drop rupture. Both values, however, resemble theoretically extrapolations to the larger radius. The technique allows for a systematic study of breakup behavior of

  3. Anderson Transition of Cold Atoms with Synthetic Spin-Orbit Coupling in Two-Dimensional Speckle Potentials

    Science.gov (United States)

    Orso, Giuliano

    2017-03-01

    We investigate the metal-insulator transition occurring in two-dimensional (2D) systems of noninteracting atoms in the presence of artificial spin-orbit interactions and a spatially correlated disorder generated by laser speckles. Based on a high order discretization scheme, we calculate the precise position of the mobility edge and verify that the transition belongs to the symplectic universality class. We show that the mobility edge depends strongly on the mixing angle between Rashba and Dresselhaus spin-orbit couplings. For equal couplings a non-power-law divergence is found, signaling the crossing to the orthogonal class, where such a 2D transition is forbidden.

  4. Reversible magnetic-field-induced martensitic transformation over a wide temperature window in Ni42-xCoxCu8Mn37Ga13 alloys

    Science.gov (United States)

    Hua, Hui; Wang, Jingmin; Jiang, Chengbao; Xu, Huibin

    2018-05-01

    Ni42-xCoxCu8Mn37Ga13 (0 ≤ x ≤ 14) alloys are reported to exhibit a magnetostructural transition from weakly-magnetic martensite to ferromagnetic austenite over a rather wide temperature window ranging from 200 K to 380 K. Simultaneously a large magnetization change Δσ of up to 105 Am2 kg-1 is obtained at the martensitic transformation. A reversible magnetic-field-induced martensitic transformation is realized, resulting in a large magnetocaloric effect related to the high magnetic entropy change with a broad working temperature span. This work shows how it is possible to effectively tailor the magnetostructural transition in Ni-Mn-Ga alloys so as to achieve a reversible magnetic-field-induced martensitic transformation and associated functionalities.

  5. Is a field-induced ferromagnetic phase transition in the magnetar core actually possible?

    International Nuclear Information System (INIS)

    Isayev, A.A.; Isayev, A.A.; Yang, J.

    2011-01-01

    Spin polarized states in dense neutron matter with BSk20 Skyrme force are considered in magnetic fields up to 10 20 G. It is shown that the appearance of the longitudinal instability in a strong magnetic field prevents the formation of a fully spin polarized state in neutron matter, and only the states with moderate spin polarization can be developed.

  6. Localized electric field induced transition and miniaturization of two-phase flow patterns inside microchannels.

    Science.gov (United States)

    Sharma, Abhinav; Tiwari, Vijeet; Kumar, Vineet; Mandal, Tapas Kumar; Bandyopadhyay, Dipankar

    2014-10-01

    Strategic application of external electrostatic field on a pressure-driven two-phase flow inside a microchannel can transform the stratified or slug flow patterns into droplets. The localized electrohydrodynamic stress at the interface of the immiscible liquids can engender a liquid-dielectrophoretic deformation, which disrupts the balance of the viscous, capillary, and inertial forces of a pressure-driven flow to engender such flow morphologies. Interestingly, the size, shape, and frequency of the droplets can be tuned by varying the field intensity, location of the electric field, surface properties of the channel or fluids, viscosity ratio of the fluids, and the flow ratio of the phases. Higher field intensity with lower interfacial tension is found to facilitate the oil droplet formation with a higher throughput inside the hydrophilic microchannels. The method is successful in breaking down the regular pressure-driven flow patterns even when the fluid inlets are exchanged in the microchannel. The simulations identify the conditions to develop interesting flow morphologies, such as (i) an array of miniaturized spherical or hemispherical or elongated oil drops in continuous water phase, (ii) "oil-in-water" microemulsion with varying size and shape of oil droplets. The results reported can be of significance in improving the efficiency of multiphase microreactors where the flow patterns composed of droplets are preferred because of the availability of higher interfacial area for reactions or heat and mass exchange. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Magnetic-field-induced valence transition in rare-earth systems

    Indian Academy of Sciences (India)

    In the present work we investigate the scaling behavior observed experimentally based on an electronic model which has not yet been attempted. 2. The model and approximation. The Hamiltonian of the periodic Anderson model (PAM) with Falicov–Kimball term used to describe both continuous and discontinuous valence ...

  8. External field-induced chaos in classical and quantum Hamiltonian systems

    International Nuclear Information System (INIS)

    Lin, W.C.

    1986-01-01

    Classical nonlinear nonintegrable systems exhibit dense sets of resonance zones in phase space. Global chaotic motion appears when neighboring resonance zones overlap. The chaotic motion signifies the destruction of a quasi constant of motion. The motion of a particle, trapped in one of the wells of a sinusoidal, potential driven by a monochromatic external field was studied. Global chaotic behavior sets in when the amplitude of the external field reaches a critical value. The particle then escapes the well. The critical values are found to be in good agreement with a resonance overlap criterion rather than a renormalization-group scheme. A similar system was then studied, but with the particle being confined in an infinite square well potential instead. A stochastic layer is found in the low-energy part of the phase space. The resonance zone structure is found to be in excellent agreement with predictions. The critical values for the onset of global chaotic behavior are found to be in excellent agreement with the renormalization group scheme. The quantum version of the second model above was then considered. In a similar fashion, the external field induces quantum resonance zones. The spectral statistics were computed, and a transition of statistics from Poissonian to Wigner-like was found as overlap of quantum resonances occurs. This also signifies the destruction of a quasi-constant of motion

  9. The field induced e31,f piezoelectric and Rayleigh response in barium strontium titanate thin films

    International Nuclear Information System (INIS)

    Garten, L. M.; Trolier-McKinstry, S.

    2014-01-01

    The electric field induced e 31,f piezoelectric response and tunability of Ba 0.7 Sr 0.3 TiO 3 (70:30) and Ba 0.6 Sr 0.4 TiO 3 (60:40) thin films on MgO and silicon was measured. The relative dielectric tunabilities for the 70:30 and 60:40 compositions on MgO were 83% and 70%, respectively, with a dielectric loss of less than 0.011 and 0.004 at 100 kHz. A linear increase in induced piezoelectricity to −3.0 C/m 2 and −1.5 C/m 2 at 110 kV/cm was observed in Ba 0.6 Sr 0.4 TiO 3 on MgO and Ba 0.7 Sr 0.3 TiO 3 on Si. Hysteresis in the piezoelectric and dielectric response of the 70:30 composition films was consistent with the positive irreversible dielectric Rayleigh coefficient. Both indicate a ferroelectric contribution to the piezoelectric and dielectric response over 40–80 °C above the global paraelectric transition temperature.

  10. Electric-field-induced modification in Dzyaloshinskii-Moriya interaction of Co monolayer on Pt(111)

    Science.gov (United States)

    Nakamura, Kohji; Akiyama, Toru; Ito, Tomonori; Ono, Teruo; Weinert, Michael

    Magnetism induced by an external electric field (E-field) has received much attention as a potential approach for controlling magnetism at the nano-scale with the promise of ultra-low energy power consumption. Here, the E-field-induced modification of the Dzyaloshinskii-Moriya interaction (DMI) for a prototypical transition-metal thin layer of a Co monolayer on Pt(111) is investigated by first-principles calculations by using the full-potential linearized augmented plane wave method that treats spin-spiral structures in an E-field. With inclusion of the spin-orbit coupling (SOC) by the second variational method for commensurate spin-spiral structures, the DMI constants were estimated from an asymmetric contribution in the total energy with respect to the spin-spiral wavevector. The results predicted that the DMI is modified by the E-field, but the change is found to be small compared to that in the exchange interaction (a symmetric contribution in the total energy) by a factor of ten.

  11. Effects of Disorder on the Pressure-Induced Mott Transition in κ-(BEDT-TTF2Cu[N(CN2]Cl

    Directory of Open Access Journals (Sweden)

    Elena Gati

    2018-01-01

    Full Text Available We present a study of the influence of disorder on the Mott metal-insulator transition for the organic charge-transfer salt κ -(BEDT-TTF 2 Cu[N(CN 2 ]Cl. To this end, disorder was introduced into the system in a controlled way by exposing the single crystals to X-ray irradiation. The crystals were then fine-tuned across the Mott transition by the application of continuously controllable He-gas pressure at low temperatures. Measurements of the thermal expansion and resistance show that the first-order character of the Mott transition prevails for low irradiation doses achieved by irradiation times up to 100 h. For these crystals with a moderate degree of disorder, we find a first-order transition line which ends in a second-order critical endpoint, akin to the pristine crystals. Compared to the latter, however, we observe a significant reduction of both, the critical pressure p c and the critical temperature T c . This result is consistent with the theoretically-predicted formation of a soft Coulomb gap in the presence of strong correlations and small disorder. Furthermore, we demonstrate, similar to the observation for the pristine sample, that the Mott transition after 50 h of irradiation is accompanied by sizable lattice effects, the critical behavior of which can be well described by mean-field theory. Our results demonstrate that the character of the Mott transition remains essentially unchanged at a low disorder level. However, after an irradiation time of 150 h, no clear signatures of a discontinuous metal-insulator transition could be revealed anymore. These results suggest that, above a certain disorder level, the metal-insulator transition becomes a smeared first-order transition with some residual hysteresis.

  12. Kondo-Anderson transitions

    Science.gov (United States)

    Kettemann, S.; Mucciolo, E. R.; Varga, I.; Slevin, K.

    2012-03-01

    Dilute magnetic impurities in a disordered Fermi liquid are considered close to the Anderson metal-insulator transition (AMIT). Critical power-law correlations between electron wave functions at different energies in the vicinity of the AMIT result in the formation of pseudogaps of the local density of states. Magnetic impurities can remain unscreened at such sites. We determine the density of the resulting free magnetic moments in the zero-temperature limit. While it is finite on the insulating side of the AMIT, it vanishes at the AMIT, and decays with a power law as function of the distance to the AMIT. Since the fluctuating spins of these free magnetic moments break the time-reversal symmetry of the conduction electrons, we find a shift of the AMIT, and the appearance of a semimetal phase. The distribution function of the Kondo temperature TK is derived at the AMIT, in the metallic phase, and in the insulator phase. This allows us to find the quantum phase diagram in an external magnetic field B and at finite temperature T. We calculate the resulting magnetic susceptibility, the specific heat, and the spin relaxation rate as a function of temperature. We find a phase diagram with finite-temperature transitions among insulator, critical semimetal, and metal phases. These new types of phase transitions are caused by the interplay between Kondo screening and Anderson localization, with the latter being shifted by the appearance of the temperature-dependent spin-flip scattering rate. Accordingly, we name them Kondo-Anderson transitions.

  13. Electrical properties of GaN-based metal-insulator-semiconductor structures with Al2O3 deposited by atomic layer deposition using water and ozone as the oxygen precursors

    Science.gov (United States)

    Kubo, Toshiharu; Freedsman, Joseph J.; Iwata, Yasuhiro; Egawa, Takashi

    2014-04-01

    Al2O3 deposited by atomic layer deposition (ALD) was used as an insulator in metal-insulator-semiconductor (MIS) structures for GaN-based MIS-devices. As the oxygen precursors for the ALD process, water (H2O), ozone (O3), and both H2O and O3 were used. The chemical characteristics of the ALD-Al2O3 surfaces were investigated by x-ray photoelectron spectroscopy. After fabrication of MIS-diodes and MIS-high-electron-mobility transistors (MIS-HEMTs) with the ALD-Al2O3, their electrical properties were evaluated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The threshold voltage of the C-V curves for MIS-diodes indicated that the fixed charge in the Al2O3 layer is decreased when using both H2O and O3 as the oxygen precursors. Furthermore, MIS-HEMTs with the H2O + O3-based Al2O3 showed good dc I-V characteristics without post-deposition annealing of the ALD-Al2O3, and the drain leakage current in the off-state region was suppressed by seven orders of magnitude.

  14. Effect of AlN growth temperature on trap densities of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors

    Directory of Open Access Journals (Sweden)

    Joseph J. Freedsman

    2012-06-01

    Full Text Available The trapping properties of in-situ metal-organic chemical vapor deposition (MOCVD grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors (MIS-HFETs with AlN layers grown at 600 and 700 °C has been quantitatively analyzed by frequency dependent parallel conductance technique. Both the devices exhibited two kinds of traps densities, due to AlN (DT-AlN and AlGaN layers (DT-AlGaN respectively. The MIS-HFET grown at 600 °C showed a minimum DT-AlN and DT-AlGaN of 1.1 x 1011 and 1.2 x 1010 cm-2eV-1 at energy levels (ET -0.47 and -0.36 eV. Further, the gate-lag measurements on these devices revealed less degradation ∼ ≤ 5% in drain current density (Ids-max. Meanwhile, MIS-HFET grown at 700 °C had more degradation in Ids-max ∼26 %, due to high DT-AlN and DT-AlGaN of 3.4 x 1012 and 5 x 1011 cm-2eV-1 positioned around similar ET. The results shows MIS-HFET grown at 600 °C had better device characteristics with trap densities one order of magnitude lower than MIS-HFET grown at 700 °C.

  15. Role of entropy and structural parameters in the spin-state transition of LaCoO3

    Science.gov (United States)

    Chakrabarti, Bismayan; Birol, Turan; Haule, Kristjan

    2017-11-01

    The spin-state transition in LaCoO3 has eluded description for decades despite concerted theoretical and experimental effort. In this study, we approach this problem using fully charge self-consistent density functional theory + embedded dynamical mean field theory (DFT+DMFT). We show from first principles that LaCoO3 cannot be described by a single, pure spin state at any temperature. Instead, we observe a gradual change in the population of higher-spin multiplets with increasing temperature, with the high-spin multiplets being excited at the onset of the spin-state transition followed by the intermediate-spin multiplets being excited at the metal-insulator-transition temperature. We explicitly elucidate the critical role of lattice expansion and oxygen octahedral rotations in the spin-state transition. We also reproduce, from first principles, that the spin-state transition and the metal-insulator transition in LaCoO3 occur at different temperature scales. In addition, our results shed light on the importance of electronic entropy in driving the spin-state transition, which has so far been ignored in all first-principles studies of this material.

  16. Field-induced magnetic instability within a superconducting condensate

    DEFF Research Database (Denmark)

    Mazzone, Daniel Gabriel; Raymond, Stephane; Gavilano, Jorge Luis

    2017-01-01

    The application of magnetic fields, chemical substitution, or hydrostatic pressure to strongly correlated electron materials can stabilize electronic phases with different organizational principles. We present evidence for a fieldinduced quantum phase transition, in superconducting Nd0.05Ce0.95Co...... that the magnetic instability is not magnetically driven, and we propose that it is driven by a modification of superconducting condensate at H*.......In5, that separates two antiferromagnetic phases with identical magnetic symmetry. At zero field, we find a spin-density wave that is suppressed at the critical field mu H-0* = 8 T. For H > H*, a spin-density phase emerges and shares many properties with the Q phase in CeCoIn5. These results suggest...

  17. Mott transition in the Hubbard model

    International Nuclear Information System (INIS)

    Shastry, B.S.

    1992-01-01

    In this article, the author discuss W. Kohn's criterion for a metal insulator transition, within the framework of a one-band Hubbard model. This and related ideas are applied to 1-dimensional Hubbard systems, and some interesting miscellaneous results discussed. The Jordan-Wigner transformation converting the two species of fermions to two species of hardcore bosons is performed in detail, and the extra phases arising from odd-even effects are explicitly derived. Bosons are shown to prefer zero flux (i.e., diamagnetism) and the corresponding happy fluxes: for the fermions identified. A curios result following from the interplay between orbital diamagnetism and spin polarization is highlighted. A spin-statistics like theorem, showing that the anticommutation relations between fermions of opposite spin are crucial to obtain the SU(2) invariance is pointed out

  18. Electric Field Induced Strain in Electrostrictive Polymers Under High Hydrostatic Pressure - System Development and Material Characterization

    National Research Council Canada - National Science Library

    Zhang, Q

    2000-01-01

    ... of (i) developing a high performance piezo-bimorph based dilatometer which can be used to characterize the electric field induced strain response in polymer films under high hydrostatic pressure, (ii...

  19. Electron mobility variance in the presence of an electric field: Electron-phonon field-induced tunnel scattering

    International Nuclear Information System (INIS)

    Melkonyan, S.V.

    2012-01-01

    The problem of electron mobility variance is discussed. It is established that in equilibrium semiconductors the mobility variance is infinite. It is revealed that the cause of the mobility variance infinity is the threshold of phonon emission. The electron-phonon interaction theory in the presence of an electric field is developed. A new mechanism of electron scattering, called electron-phonon field-induced tunnel (FIT) scattering, is observed. The effect of the electron-phonon FIT scattering is explained in terms of penetration of the electron wave function into the semiconductor band gap in the presence of an electric field. New and more general expressions for the electron-non-polar optical phonon scattering probability and relaxation time are obtained. The results show that FIT transitions have principle meaning for the mobility fluctuation theory: mobility variance becomes finite.

  20. Quantum phase transitions of strongly correlated electron systems

    International Nuclear Information System (INIS)

    Imada, Masatoshi

    1998-01-01

    Interacting electrons in solids undergo various quantum phase transitions driven by quantum fluctuations. The quantum transitions take place at zero temperature by changing a parameter to control quantum fluctuations rather than thermal fluctuations. In contrast to classical phase transitions driven by thermal fluctuations, the quantum transitions have many different features where quantum dynamics introduces a source of intrinsic fluctuations tightly connected with spatial correlations and they have been a subject of recent intensive studies as we see below. Interacting electron systems cannot be fully understood without deep analyses of the quantum phase transitions themselves, because they are widely seen and play essential roles in many phenomena. Typical and important examples of the quantum phase transitions include metal-insulator transitions, (2, 3, 4, 5, 6, 7, 8, 9) metal-superconductor transitions, superconductor-insulator transitions, magnetic transitions to antiferromagnetic or ferromagnetic phases in metals as well as in Mott insulators, and charge ordering transitions. Here, we focus on three different types of transitions

  1. Mott Transition of Fermionic Atoms in a Three-Dimensional Optical Trap

    International Nuclear Information System (INIS)

    Helmes, R. W.; Rosch, A.; Costi, T. A.

    2008-01-01

    We study theoretically the Mott metal-insulator transition for a system of fermionic atoms confined in a three-dimensional optical lattice and a harmonic trap. We describe an inhomogeneous system of several thousand sites using an adaptation of dynamical mean-field theory solved efficiently with the numerical renormalization group method. Above a critical value of the on-site interaction, a Mott-insulating phase appears in the system. We investigate signatures of the Mott phase in the density profile and in time-of-flight experiments

  2. Spin-State Transition in La1-xSrxCoO3 Single Crystals

    Science.gov (United States)

    Bhardwaj, S.; Prabhakaran, D.; Awasthi, A. M.

    2011-07-01

    We present a study of the thermal conductivity (κ), specific heat (Cp) and Raman spectra of La1-xSrxCoO3 (x = 0,0.1) single crystals. Both the specimens have low thermal conductivity and board Raman peaks, arising from strong scattering of phonons by lattice disorder, produced by (and doping-enhanced) spin-states admixture of the Co3+ ions. The thermal conductivity anomalously deviates from ˜1/T behaviour at high (room) temperatures, expected of an insulator. High-temperature specific heat reveals large decrease in the metal-insulator (M-I) transition temperature with Sr-doping.

  3. The effects of disorder and interactions on the Anderson transition in doped graphene

    International Nuclear Information System (INIS)

    Song Yun; Song Hongkang; Feng Shiping

    2011-01-01

    We undertake an exact numerical study of the effects of disorder on the Anderson localization of electronic states in graphene. Analyzing the scaling behaviors of inverse participation ratio and geometrically averaged density of states, we find that the Anderson metal-insulator transition can be introduced by the presence of quenched random disorder. In contrast with the conventional picture of localization, four mobility edges can be observed for the honeycomb lattice with specific disorder strength and impurity concentration. Considering the screening effects of interactions on disorder potentials, the experimental findings of the scale enlargements of puddles can be explained by reviewing the effects of both interactions and disorder.

  4. Voltage linearity modulation and polarity dependent conduction in metal-insulator-metal capacitors with atomic-layer-deposited Al{sub 2}O{sub 3}/ZrO{sub 2}/SiO{sub 2} nano-stacks

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Bao; Liu, Wen-Jun; Wei, Lei; Zhang, David Wei; Jiang, Anquan; Ding, Shi-Jin, E-mail: sjding@fudan.edu.cn [State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433 (China)

    2015-07-07

    Excellent voltage linearity of metal-insulator-metal (MIM) capacitors is highly required for next generation radio frequency integration circuits. In this work, employing atomic layer deposition technique, we demonstrated how the voltage linearity of MIM capacitors was modulated by adding different thickness of SiO{sub 2} layer to the nano-stack of Al{sub 2}O{sub 3}/ZrO{sub 2}. It was found that the quadratic voltage coefficient of capacitance (α) can be effectively reduced from 1279 to −75 ppm/V{sup 2} with increasing the thickness of SiO{sub 2} from zero to 4 nm, which is more powerful than increasing the thickness of ZrO{sub 2} in the Al{sub 2}O{sub 3}/ZrO{sub 2} stack. This is attributed to counteraction between the positive α for Al{sub 2}O{sub 3}/ZrO{sub 2} and the negative one for SiO{sub 2} in the MIM capacitors with Al{sub 2}O{sub 3}/ZrO{sub 2}/SiO{sub 2} stacks. Interestingly, voltage-polarity dependent conduction behaviors in the MIM capacitors were observed. For electron bottom-injection, the addition of SiO{sub 2} obviously suppressed the leakage current; however, it abnormally increased the leakage current for electron top-injection. These are ascribed to the co-existence of shallow and deep traps in ZrO{sub 2}, and the former is in favor of the field-assisted tunnelling conduction and the latter contributes to the trap-assisted tunnelling process. The above findings will be beneficial to device design and process optimization for high performance MIM capacitors.

  5. Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states

    International Nuclear Information System (INIS)

    Capriotti, M.; Fleury, C.; Oposich, M.; Bethge, O.; Strasser, G.; Pogany, D.; Lagger, P.; Ostermaier, C.

    2015-01-01

    We provide theoretical and simulation analysis of the small signal response of SiO 2 /AlGaN/GaN metal insulator semiconductor (MIS) capacitors from depletion to spill over region, where the AlGaN/SiO 2 interface is accumulated with free electrons. A lumped element model of the gate stack, including the response of traps at the III-N/dielectric interface, is proposed and represented in terms of equivalent parallel capacitance, C p , and conductance, G p . C p -voltage and G p -voltage dependences are modelled taking into account bias dependent AlGaN barrier dynamic resistance R br and the effective channel resistance. In particular, in the spill-over region, the drop of C p with the frequency increase can be explained even without taking into account the response of interface traps, solely by considering the intrinsic response of the gate stack (i.e., no trap effects) and the decrease of R br with the applied forward bias. Furthermore, we show the limitations of the conductance method for the evaluation of the density of interface traps, D it , from the G p /ω vs. angular frequency ω curves. A peak in G p /ω vs. ω occurs even without traps, merely due to the intrinsic frequency response of gate stack. Moreover, the amplitude of the G p /ω vs. ω peak saturates at high D it , which can lead to underestimation of D it . Understanding the complex interplay between the intrinsic gate stack response and the effect of interface traps is relevant for the development of normally on and normally off MIS high electron mobility transistors with stable threshold voltage

  6. Insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor devices with Al2O3 or AlTiO gate dielectrics

    Science.gov (United States)

    Le, Son Phuong; Nguyen, Duong Dai; Suzuki, Toshi-kazu

    2018-01-01

    We have investigated insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor (MIS) devices with Al2O3 or AlTiO (an alloy of Al2O3 and TiO2) gate dielectrics obtained by atomic layer deposition on AlGaN. Analyzing insulator-thickness dependences of threshold voltages for the MIS devices, we evaluated positive interface fixed charges, whose density at the AlTiO/AlGaN interface is significantly lower than that at the Al2O3/AlGaN interface. This and a higher dielectric constant of AlTiO lead to rather shallower threshold voltages for the AlTiO gate dielectric than for Al2O3. The lower interface fixed charge density also leads to the fact that the two-dimensional electron concentration is a decreasing function of the insulator thickness for AlTiO, whereas being an increasing function for Al2O3. Moreover, we discuss the relationship between the interface fixed charges and interface states. From the conductance method, it is shown that the interface state densities are very similar at the Al2O3/AlGaN and AlTiO/AlGaN interfaces. Therefore, we consider that the lower AlTiO/AlGaN interface fixed charge density is not owing to electrons trapped at deep interface states compensating the positive fixed charges and can be attributed to a lower density of oxygen-related interface donors.

  7. Study of transition metal oxides by photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Rao, C.N.R.; Sarma, D.D.; Vasudevan, S.; Hegde, M.S.

    1979-01-01

    Systematics in the X-ray photoelectron spectra (X.p.e.s.) of Ti, V, Cr, Mn and Nb oxides with the metal ion in different oxidation states as well as of related series of mono-, sesqui- and di-oxides of the first row of transition metals have been investigated in detail. Core level binding energies, spin-orbit splittings and exchange splittings are found to exhibit interesting variations with the oxidation state of the metal or the nuclear charge. The 3d binding energies of the monoxides show a proportionality to Goodenough's (R - RC). Other aspects of interest in the study are the satellite structure and final state effects in the X.p.e.s. of the oxides, and identification of different valence states in oxides of the general formulae Mn02n-1 and M304. The nature of changes in the 3d bands of oxides undergoing metal-insulator transitions is also indicated. (author)

  8. Magnetic Excitations and Continuum of a Possibly Field-Induced Quantum Spin Liquid in α-RuCl_{3}.

    Science.gov (United States)

    Wang, Zhe; Reschke, S; Hüvonen, D; Do, S-H; Choi, K-Y; Gensch, M; Nagel, U; Rõõm, T; Loidl, A

    2017-12-01

    We report on terahertz spectroscopy of quantum spin dynamics in α-RuCl_{3}, a system proximate to the Kitaev honeycomb model, as a function of temperature and magnetic field. We follow the evolution of an extended magnetic continuum below the structural phase transition at T_{s2}=62  K. With the onset of a long-range magnetic order at T_{N}=6.5  K, spectral weight is transferred to a well-defined magnetic excitation at ℏω_{1}=2.48  meV, which is accompanied by a higher-energy band at ℏω_{2}=6.48  meV. Both excitations soften in a magnetic field, signaling a quantum phase transition close to B_{c}=7  T, where a broad continuum dominates the dynamical response. Above B_{c}, the long-range order is suppressed, and on top of the continuum, emergent magnetic excitations evolve. These excitations follow clear selection rules and exhibit distinct field dependencies, characterizing the dynamical properties of a possibly field-induced quantum spin liquid.

  9. Numerical modeling of large field-induced strains in ferroelastic bodies: a continuum approach

    International Nuclear Information System (INIS)

    Raikher, Yu L; Stolbov, O V

    2008-01-01

    A consistent continuum model of a soft magnetic elastomer (SME) is presented and developed for the case of finite strain. The numeric algorithm enabling one to find the field-induced shape changes of an SME body is described. The reliability of the method is illustrated by several examples revealing specifics of the magnetostriction effect in SME samples of various geometries

  10. Spatiotemporal structure of intracranial electric fields induced by transcranial electric stimulation in humans and nonhuman primates

    DEFF Research Database (Denmark)

    Opitz, Alexander; Falchier, Arnaud; Yan, Chao-Gan

    2016-01-01

    Transcranial electric stimulation (TES) is an emerging technique, developed to non-invasively modulate brain function. However, the spatiotemporal distribution of the intracranial electric fields induced by TES remains poorly understood. In particular, it is unclear how much current actually reac...

  11. Field-induced surface passivation of p-type silicon by using AlON films

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, S.N.; Parm, I.O.; Dhungel, S.K.; Jang, K.S.; Jeong, S.W.; Yoo, J.; Hwang, S.H.; Yi, J. [School of Information and Communication Engineering, Sungkyunkwan University, 300 Chunchun dong, Jangan-gu, Suwon-440746 (Korea)

    2008-02-15

    In the present work, we report on the evidence for a high negative charge density in aluminum oxynitride (AlON) coating on silicon. A comparative study was carried out on the composition and electrical properties of AlON and aluminum nitride (AlN). AlON films were deposited on p-type Si (1 0 0) substrate by RF magnetron sputtering using a mixture of argon and oxygen gases at substrate temperature of 300 C. The electrical properties of the AlON, AlN films were studied through capacitance-voltage (C-V) characteristics of metal-insulator-semiconductor (MIS) using the films as insulating layers. The flatband voltage shift V{sub FB} observed for AlON is around 4.5 V, which is high as compared to the AlN thin film. Heat treatment caused the V{sub FB} reduction to 3 V, but still the negative charge density was observed to be very high. In the AlN film, no fixed negative charge was observed at all. The XRD spectrum of AlON shows the major peaks of AlON (2 2 0) and AlN (0 0 2), located at 2{theta} value of 32.96 and 37.8 , respectively. The atomic percentage of Al, N in AlN film was found to be 42.5% and 57.5%, respectively. Atomic percentages of Al, N and O in EDS of AlON film are 20.21%, 27.31% and 52.48%, respectively. (author)

  12. Resolving the chicken-and-egg problem in VO2: a new paradigm for the Mott transition

    Science.gov (United States)

    Najera, Oscar; Civelli, Marcello; Dobrosavljevi, Vladimir; Rozenberg, Marcelo

    We consider a minimal model to investigate the metal-insulator transition in VO2. We adopt a Hubbard model with two orbital per unit cell, which captures the competition between Mott and singlet-dimer localization. We solve the model within Dynamical Mean Field Theory, characterizing in detail the metal-insulator transition and finding new features in the electronic states. We compare our results with available experimental data obtaining good agreement in the relevant model parameter range. Crucially, we can account for puzzling optical conductivity data obtained within the hysteresis region, which we associate to a novel metallic state characterized by a split heavy quasiparticle band. Our results show that the thermal-driven insulator-to-metal transition in VO2 is entirely compatible with a Mott electronic mechanism, solving a long standing ''chicken-and-egg'' debate and calling for further research of ``Mottronics'' applications of this system. This work was partially supported by public Grants from the French National Research Agency (ANR), project LACUNES No ANR-13-BS04-0006-01, the NSF DMR-1005751 and DMR-1410132.

  13. Magnetic field-induced modification of selection rules for Rb D 2 line monitored by selective reflection from a vapor nanocell

    Science.gov (United States)

    Klinger, Emmanuel; Sargsyan, Armen; Tonoyan, Ara; Hakhumyan, Grant; Papoyan, Aram; Leroy, Claude; Sarkisyan, David

    2017-08-01

    Magnetic field-induced giant modification of the probabilities of five transitions of 5S1 / 2,Fg = 2 → 5P3 / 2,Fe = 4 of 85Rb and three transitions of 5S1 / 2,Fg = 1 → 5P3 / 2,Fe = 3 of 87Rb forbidden by selection rules for zero magnetic field has been observed experimentally and described theoretically for the first time. For the case of excitation with circularly-polarized (σ+) laser radiation, the probability of Fg = 2,mF = - 2 → Fe = 4,mF = - 1 transition becomes the largest among the seventeen transitions of 85Rb Fg = 2 → Fe = 1,2,3,4 group, and the probability of Fg = 1, mF = - 1 → Fe = 3,mF = 0 transition becomes the largest among the nine transitions of 87Rb Fg = 1 → Fe = 0,1,2,3 group, in a wide range of magnetic field 200-1000 G. Complete frequency separation of individual Zeeman components was obtained by implementation of derivative selective reflection technique with a 300 nm-thick nanocell filled with Rb, allowing formation of narrow optical resonances. Possible applications are addressed. The theoretical model is well consistent with the experimental results.

  14. Evidence for a Field-Induced Quantum Spin Liquid in α -RuCl3

    Science.gov (United States)

    Baek, S.-H.; Do, S.-H.; Choi, K.-Y.; Kwon, Y. S.; Wolter, A. U. B.; Nishimoto, S.; van den Brink, Jeroen; Büchner, B.

    2017-07-01

    We report a 35Cl nuclear magnetic resonance study in the honeycomb lattice α -RuCl3 , a material that has been suggested to potentially realize a Kitaev quantum spin liquid (QSL) ground state. Our results provide direct evidence that α -RuCl3 exhibits a magnetic-field-induced QSL. For fields larger than ˜10 T , a spin gap opens up while resonance lines remain sharp, evidencing that spins are quantum disordered and locally fluctuating. The spin gap increases linearly with an increasing magnetic field, reaching ˜50 K at 15 T, and is nearly isotropic with respect to the field direction. The unusual rapid increase of the spin gap with increasing field and its isotropic nature are incompatible with conventional magnetic ordering and, in particular, exclude that the ground state is a fully polarized ferromagnet. The presence of such a field-induced gapped QSL phase has indeed been predicted in the Kitaev model.

  15. Field induced ferromagnetic fraction enlargement in phase separated La_0.5Ca_0.5MnO_3

    Science.gov (United States)

    Ghivelder, Luis; Freitas, R. S.; Sacanel, J.; Parisi, F.; Levy, P.

    2001-03-01

    A systematic study of the magnetic and transport properties of a series of phase separated La_0.5Ca_0.5MnO3 compounds is reported. The investigated samples all have the same composition but different grain sizes, which modifies the volume fraction of the coexisting ferromagnetic (FM) and antiferromagnetic charge-ordered (AFM-CO) phases. Magnetoresistance and magnetization measurements were performed with two different experimental procedures: a standard field-cooled cooling (FC) mode, and a second method in which the field is turned on only while measuring each data point, and switched off while cooling the samples. Magnetization and magnetoresistance measurements display big differences when comparing the data obtained with the different procedures. The overall results are interpret in terms of a field induced FM fraction enlargement. In transport measurements this effect yield a percolative transition. Magnetization data shows evidence for the formation of AFM-CO regions within the FM phase. * e-mail: luisghiv@if.ufrj.br

  16. Macroscopic electrical field distribution and field-induced surface stresses of needle-shaped field emitters

    Energy Technology Data Exchange (ETDEWEB)

    Moy, Charles K.S., E-mail: charles.moy@sydney.edu.au [Australian Centre for Microscopy and Microanalysis, The University of Sydney, Sydney, NSW 2006 (Australia); ARC Centre of Excellence for Design in Light Metals, The University of Sydney, Sydney, NSW 2006 (Australia); School of Civil Engineering, The University of Sydney, Sydney, NSW 2006 (Australia); Ranzi, Gianluca [ARC Centre of Excellence for Design in Light Metals, The University of Sydney, Sydney, NSW 2006 (Australia); School of Civil Engineering, The University of Sydney, Sydney, NSW 2006 (Australia); Petersen, Timothy C. [Australian Centre for Microscopy and Microanalysis, The University of Sydney, Sydney, NSW 2006 (Australia); Ringer, Simon P. [Australian Centre for Microscopy and Microanalysis, The University of Sydney, Sydney, NSW 2006 (Australia); ARC Centre of Excellence for Design in Light Metals, The University of Sydney, Sydney, NSW 2006 (Australia)

    2011-05-15

    One major concern since the development of the field ion microscope is the mechanical strength of the specimens. The macroscopic shape of the imaging tip greatly influences field-induced stresses and there is merit in further study of this phenomenon from a classical perspective. Understanding the geometrical, as opposed to localized electronic, factors that affect the stress might improve the quality and success rate of atom probe experiments. This study uses macroscopic electrostatic principles and finite element modelling to investigate field-induced stresses in relation to the shape of the tip. Three two-dimensional idealized models are considered, namely hyperbolic, parabolic and sphere-on-orthogonal-cone; the shapes of which are compared to experimental tips prepared by electro-polishing. Three dimensional morphologies of both a nano-porous and single-crystal aluminium tip are measured using electron tomography to quantitatively test the assumption of cylindrical symmetry for electro-polished tips. The porous tip was prepared and studied to demonstrate a fragile specimen for which such finite element studies could determine potential mechanical failure, prior to any exhaustive atom probe investigation. -- Research highlights: {yields} We use electrostatic principles and finite element to model field-induced stresses. {yields} We study two-dimensional idealized needle-shaped field emitters. {yields} Stress distribution of hyperbolic, parabolic and sphere-on-orthogonal-cone tips mapped. {yields} Electron tomography to obtain the morphology of three-dimensional aluminium tips. {yields} Studies of the morphology of the porous tip demonstrate a fragile specimen.

  17. Resistive transition in disordered superconductors with varying intergrain coupling

    International Nuclear Information System (INIS)

    Ponta, L; Carbone, A; Gilli, M

    2011-01-01

    The effect of disorder is investigated in granular superconductive materials with strong- and weak-links. The transition is controlled by the interplay of the tunneling g and intragrain g intr conductances, which depend on the strength of the intergrain coupling. For g intr , the transition first involves the grain boundary, while for g ∼ g intr the transition occurs into the whole grain. The different intergrain couplings are considered by modeling the superconducting material as a disordered network of Josephson junctions. Numerical simulations show that on increasing the disorder, the resistive transition occurs for lower temperatures and the curve broadens. These features are enhanced in disordered superconductors with strong-links. The different behavior is further checked by estimating the average network resistance for weak- and strong-links in the framework of the effective medium approximation theory. These results may shed light on long standing puzzles such as: (i) enhancement of the superconducting transition temperature of many metals in the granular states; (ii) suppression of superconductivity in homogeneously disordered films compared to standard granular systems close to the metal-insulator transition; (iii) enhanced degradation of superconductivity by doping and impurities in strongly linked materials, such as magnesium diboride, compared to weakly linked superconductors, such as cuprates.

  18. Field-induced spin splitting and anomalous photoluminescence circular polarization in C H3N H3Pb I3 films at high magnetic field

    Science.gov (United States)

    Zhang, Chuang; Sun, Dali; Yu, Zhi-Gang; Sheng, Chuan-Xiang; McGill, Stephen; Semenov, Dmitry; Vardeny, Zeev Valy

    2018-04-01

    The organic-inorganic hybrid perovskites show excellent optical and electrical properties for photovoltaic and a myriad of other optoelectronics applications. Using high-field magneto-optical measurements up to 17.5 T at cryogenic temperatures, we have studied the spin-dependent optical transitions in the prototype C H3N H3Pb I3 , which are manifested in the field-induced circularly polarized photoluminescence emission. The energy splitting between left and right circularly polarized emission bands is measured to be ˜1.5 meV at 17.5 T, from which we obtained an exciton effective g factor of ˜1.32. Also from the photoluminescence diamagnetic shift we estimate the exciton binding energy to be ˜17 meV at low temperature. Surprisingly, the corresponding field-induced circular polarization is "anomalous" in that the photoluminescence emission of the higher split energy band is stronger than that of the lower split band. This "reversed" intensity ratio originates from the combination of long electron spin relaxation time and hole negative g factor in C H3N H3Pb I3 , which are in agreement with a model based on the k.p effective-mass approximation.

  19. Interaction between extended and localized electronic states in the region of the metal to insulator transition in semiconductor alloys

    Energy Technology Data Exchange (ETDEWEB)

    Teubert, Joerg

    2008-07-01

    The first part of this work addresses the influence of those isovalent localized states on the electronic properties of (B,Ga,In)As. Most valuable were the measurements under hydrostatic pressure that revealed a pressure induced metal-insulator transition. One of the main ideas in this context is the trapping of carriers in localized B-related cluster states that appear in the bandgap at high pressure. The key conclusion that can be drawn from the experimental results is that boron atoms seem to have the character of isovalent electron traps, rendering boron as the first known isovalent trap induced by cationic substitution. In the second part, thermoelectric properties of (B,Ga,In)As and (Ga,In)(N,As) are studied. It was found that although the electric-field driven electronic transport in n-type (Ga,In)(N,As) and (B,Ga,In)As differs considerably from that of n-type GaAs, the temperature-gradient driven electronic transport is very similar for the three semiconductors, despite distinct differences in the conduction band structure of (Ga,In)(N,As) and (B,Ga,In)As compared to GaAs. The third part addresses the influence of magnetic interactions on the transport properties near the metal-insulator transition (MIT). Here, two scenarios are considered: Firstly the focus is set on ZnMnSe:Cl, a representative of so called dilute magnetic semiconductors (DMS). In this material Mn(2+) ions provide a large magnetic moment due to their half filled inner 3d-shell. It is shown that magnetic interactions in conjunction with disorder effects are responsible for the unusual magnetotransport behavior found in this and other II-Mn-VI semiconductor alloys. In the second scenario, a different magnetic compound, namely InSb:Mn, is of interest. It is a representative of the III-Mn-V DMS, where the magnetic impurity Mn serves both as the source of a large localized magnetic moment and as the source of a loosely bound hole due to its acceptor character. Up to now, little is known about

  20. Interaction between extended and localized electronic states in the region of the metal to insulator transition in semiconductor alloys

    International Nuclear Information System (INIS)

    Teubert, Joerg

    2008-01-01

    The first part of this work addresses the influence of those isovalent localized states on the electronic properties of (B,Ga,In)As. Most valuable were the measurements under hydrostatic pressure that revealed a pressure induced metal-insulator transition. One of the main ideas in this context is the trapping of carriers in localized B-related cluster states that appear in the bandgap at high pressure. The key conclusion that can be drawn from the experimental results is that boron atoms seem to have the character of isovalent electron traps, rendering boron as the first known isovalent trap induced by cationic substitution. In the second part, thermoelectric properties of (B,Ga,In)As and (Ga,In)(N,As) are studied. It was found that although the electric-field driven electronic transport in n-type (Ga,In)(N,As) and (B,Ga,In)As differs considerably from that of n-type GaAs, the temperature-gradient driven electronic transport is very similar for the three semiconductors, despite distinct differences in the conduction band structure of (Ga,In)(N,As) and (B,Ga,In)As compared to GaAs. The third part addresses the influence of magnetic interactions on the transport properties near the metal-insulator transition (MIT). Here, two scenarios are considered: Firstly the focus is set on ZnMnSe:Cl, a representative of so called dilute magnetic semiconductors (DMS). In this material Mn(2+) ions provide a large magnetic moment due to their half filled inner 3d-shell. It is shown that magnetic interactions in conjunction with disorder effects are responsible for the unusual magnetotransport behavior found in this and other II-Mn-VI semiconductor alloys. In the second scenario, a different magnetic compound, namely InSb:Mn, is of interest. It is a representative of the III-Mn-V DMS, where the magnetic impurity Mn serves both as the source of a large localized magnetic moment and as the source of a loosely bound hole due to its acceptor character. Up to now, little is known about

  1. Mott-Hubbard transition and Anderson localization: A generalized dynamical mean-field theory approach

    International Nuclear Information System (INIS)

    Kuchinskii, E. Z.; Nekrasov, I. A.; Sadovskii, M. V.

    2008-01-01

    The DOS, the dynamic (optical) conductivity, and the phase diagram of a strongly correlated and strongly disordered paramagnetic Anderson-Hubbard model are analyzed within the generalized dynamical mean field theory (DMFT + Σ approximation). Strong correlations are taken into account by the DMFT, and disorder is taken into account via an appropriate generalization of the self-consistent theory of localization. The DMFT effective single-impurity problem is solved by a numerical renormalization group (NRG); we consider the three-dimensional system with a semielliptic DOS. The correlated metal, Mott insulator, and correlated Anderson insulator phases are identified via the evolution of the DOS and dynamic conductivity, demonstrating both the Mott-Hubbard and Anderson metal-insulator transition and allowing the construction of the complete zero-temperature phase diagram of the Anderson-Hubbard model. Rather unusual is the possibility of a disorder-induced Mott insulator-to-metal transition

  2. Electric-field-induced monoclinic phase in (Ba,Sr)TiO3 thin film

    International Nuclear Information System (INIS)

    Anokhin, A. S.; Yuzyuk, Yu. I.; Golovko, Yu. I.; Mukhortov, V. M.; El Marssi, M.

    2011-01-01

    We have studied electric-field-induced symmetry lowering in the tetragonal (001)-oriented heteroepitaxial (Ba 0.8 Sr 0.2 )TiO 3 thin film deposited on (001)MgO substrate. Polarized micro-Raman spectra were recorded from the film area in between two planar electrodes deposited on the film surface. Presence of c domains with polarization normal to the substrate was confirmed from polarized Raman study under zero field, while splitting and hardening of the E(TO) soft mode and polarization changes in the Raman spectra suggest monoclinic symmetry under external electric field.

  3. Rectifying the Optical-Field-Induced Current in Dielectrics: Petahertz Diode.

    Science.gov (United States)

    Lee, J D; Yun, Won Seok; Park, Noejung

    2016-02-05

    Investigating a theoretical model of the optical-field-induced current in dielectrics driven by strong few-cycle laser pulses, we propose an asymmetric conducting of the current by forming a heterojunction made of two distinct dielectrics with a low hole mass (m_{h}^{*}≪m_{e}^{*}) and low electron mass (m_{e}^{*}≪m_{h}^{*}), respectively. This proposition introduces the novel concept of a petahertz (10^{15}  Hz) diode to rectify the current in the petahertz domain, which should be a key ingredient for the electric signal manipulation of future light-wave electronics. Further, we suggest the candidate dielectrics for the heterojunction.

  4. Hall field-induced magnetoresistance oscillations of a two-dimensional electron system

    International Nuclear Information System (INIS)

    Kunold, A.; Torres, M.

    2008-01-01

    We develop a model of the nonlinear response to a dc electrical current of a two-dimensional electron system (2DES) placed on a magnetic field. Based on the exact solution to the Schroedinger equation in arbitrarily strong electric and magnetic fields, and separating the relative and guiding center coordinates, a Kubo-like formula for the current is worked out as a response to the impurity scattering. Self-consistent expressions determine the longitudinal and Hall components of the electric field in terms of the dc current. The differential resistivity displays strong Hall field-induced oscillations, in agreement with the main features of the phenomenon observed in recent experiments

  5. Electric-field-induced superconductivity detected by magnetization measurements of an electric-double-layer capacitor

    International Nuclear Information System (INIS)

    Kasahara, Yuichi; Takeuchi, Yuki; Ye, Jianting; Yuan, Hongtao; Shimotani, Hidekazu; Iwasa, Yoshihiro; Nishimura, Takahiro; Sato, Tatsuya

    2010-01-01

    We report evidence for superconductivity induced by the application of strong electric fields onto the surface of a band insulator, ZrNCl, provided by the observation of a shielding diamagnetic signal. We introduced an electric-double-layer capacitor configuration and in situ magnetization measurements at low temperatures as a method to detect the novel electric-field-induced superconducting state. The results showed excellent agreement with a previous report using a transistor configuration, demonstrating that the present technique is a novel method for investigating the nonequilibrium phase induced by electric fields. (author)

  6. Field Induced Magnetic Moments in a Metastable Iron-Mercury Alloy

    DEFF Research Database (Denmark)

    Pedersen, M.S.; Mørup, Steen; Linderoth, Søren

    1996-01-01

    The magnetic properties of a metastable iron-mercury alloy have been investigated in the temperature range from 5 to 200 K by Mossbauer spectroscopy and magnetization measurements. At low temperature the magnetic moment per iron atom is larger than af alpha-Fe. The effective spontaneous magnetic ....... It was found that the field-induced increase of the magnetic moment in the metastable iron-mecury alloy was about 0.06 Bohr magnetons per iron atom in the temperature range from 5 to 200 K for a field change from 6 to 12 T....

  7. Electric field induced localization phenomena in a ladder network with superlattice configuration: Effect of backbone environment

    Energy Technology Data Exchange (ETDEWEB)

    Dutta, Paramita; Karmakar, S. N. [Condensed Matter Physics Division, Saha Institute of Nuclear Physics, Sector-I, Block-AF, Bidhannagar, Kolkata-700 064 (India); Maiti, Santanu K., E-mail: santanu.maiti@isical.ac.in [Physics and Applied Mathematics Unit, Indian Statistical Institute, 203 Barrackpore Trunk Road, Kolkata-700 108 (India)

    2014-09-15

    Electric field induced localization properties of a tight-binding ladder network in presence of backbone sites are investigated. Based on Green's function formalism we numerically calculate two-terminal transport together with density of states for different arrangements of atomic sites in the ladder and its backbone. Our results lead to a possibility of getting multiple mobility edges which essentially plays a switching action between a completely opaque to fully or partly conducting region upon the variation of system Fermi energy, and thus, support in fabricating mesoscopic or DNA-based switching devices.

  8. Evidence for a Field-induced Quantum Spin Liquid in $\\alpha$-RuCl$_3$

    OpenAIRE

    Baek, S. -H.; Do, S. -H.; Choi, K. -Y.; Kwon, Y. S.; Wolter, A. U. B.; Nishimoto, S.; Brink, Jeroen van den; Büchner, B.

    2017-01-01

    We report a $^{35}$Cl nuclear magnetic resonance study in the honeycomb lattice, $\\alpha$-RuCl$_3$, a material that has been suggested to potentially realize a Kitaev quantum spin liquid (QSL) ground state. Our results provide direct evidence that $\\alpha$-RuCl$_3$ exhibits a magnetic field-induced QSL. For fields larger than $\\sim 10$ T a spin-gap opens up while resonance lines remain sharp, evidencing that spins are quantum disordered and locally fluctuating. The spin gap increases linearly...

  9. In situ transmission electron microscopy study of the microstructural origins for the electric field-induced phenomena in ferroelectric perovskites

    Science.gov (United States)

    Guo, Hanzheng

    Ferroelectrics are important materials due to their extensive technological applications, such as non-volatile memories, field-effect transistors, ferroelectric tunneling junctions, dielectric capacitors, piezoelectric transducers, sensors and actuators. As is well known, the outstanding dielectric, piezoelectric, and ferroelectric properties of these functional oxides originate from their ferroelectric domain arrangements and the corresponding evolution under external stimuli (e.g. electric field, stress, and temperature). Electric field has been known as the most efficient stimulus to manipulate the ferroelectric domains through polarization switching and alignment. Therefore, direct observation of the dynamic process of electric field-induced domain evolution and crystal structure transformation is of significant importance to understand the microstructural mechanisms for the functional properties of ferroelectrics. In this dissertation, electric field in situ transmission electron microscopy (TEM) technique was employed to monitor the real-time evolution of the domain morphology and crystal structure during various electrical processes: (1) the initial poling process, (2) the electric field reversal process, and (3) the electrical cycling process. Two types of perovskite-structured ceramics, normal ferroelectrics and relaxor ferroelectrics, were used for this investigation. In addition to providing the microscopic insight for some well-accepted phase transformation rules, discoveries of some new or even unexpected physical phenomena were also demonstrated. For the initial poling process, microstructural origins for the piezoelectricity development in the three most promising lead-free piezoceramic systems were investigated. For the non-ergodic relaxor ferroelectric compositions ( x = 6% - 9%) in the (1-x)(Bi1/2Na 1/2)TiO3-xBaTiO3 system, well-developed piezoelectricity was realized at poling fields far below the coercive field and phase transition field. Such

  10. Formal Valence, 3 d Occupation, and Charge Ordering Transitions

    Science.gov (United States)

    Pickett, Warren

    2014-03-01

    The metal-insulator transition (MIT), discovered by Verwey in the late 1930s, has been thought to be one of the best understood of MITs, the other ones being named after Wigner, Peierls, Mott, and Anderson. Continuing work on these transitions finds in some cases less and less charge to order, raising the fundamental question of just where the entropy is coming from, and just what is ordering. To provide insight into the mechanism of charge-ordering transitions, which conventionally are pictured as a disproportionation, I will (1) review and reconsider the charge state (or oxidation number) picture itself, (2) introduce new theoretical results for the rare earth nickelates (viz. YNiO3), the putative charge ordering compound AgNiO2, and the dual charge state insulator AgO, and (3) analyze cationic occupations of actual (not formal) charge, and work to reconcile the conundrums that arise. Several of the clearest cases of charge ordering transitions involve no disproportion; moreover, the experimental data used to support charge ordering can be accounted for within density functional based calculations that contain no charge transfer The challenge of modeling charge ordering transitions with model Hamiltonians will be discussed. Acknowledgment: Y. Quan, V. Pardo. Supported by NSF award DMR-1207622-0.

  11. Evidence for a Field-Induced Quantum Spin Liquid in α-RuCl_{3}.

    Science.gov (United States)

    Baek, S-H; Do, S-H; Choi, K-Y; Kwon, Y S; Wolter, A U B; Nishimoto, S; van den Brink, Jeroen; Büchner, B

    2017-07-21

    We report a ^{35}Cl nuclear magnetic resonance study in the honeycomb lattice α-RuCl_{3}, a material that has been suggested to potentially realize a Kitaev quantum spin liquid (QSL) ground state. Our results provide direct evidence that α-RuCl_{3} exhibits a magnetic-field-induced QSL. For fields larger than ∼10  T, a spin gap opens up while resonance lines remain sharp, evidencing that spins are quantum disordered and locally fluctuating. The spin gap increases linearly with an increasing magnetic field, reaching ∼50  K at 15 T, and is nearly isotropic with respect to the field direction. The unusual rapid increase of the spin gap with increasing field and its isotropic nature are incompatible with conventional magnetic ordering and, in particular, exclude that the ground state is a fully polarized ferromagnet. The presence of such a field-induced gapped QSL phase has indeed been predicted in the Kitaev model.

  12. Effects of spin-polarized current on pulse field-induced precessional magnetization reversal

    Directory of Open Access Journals (Sweden)

    Guang-fu Zhang

    2012-12-01

    Full Text Available We investigate effects of a small DC spin-polarized current on the pulse field-induced precessional magnetization reversal in a thin elliptic magnetic element by micromagnetic simulations. We find that the spin-polarized current not only broadens the time window of the pulse duration, in which a successful precessional reversal is achievable, but also significantly suppresses the magnetization ringing after the reversal. The pulse time window as well as the decay rate of the ringing increase with increasing the current density. When a spin-polarized current with 5 MA/cm2 is applied, the time window increases from 80 ps to 112 ps, and the relaxation time of the ringing decreases from 1.1 ns to 0.32 ns. Our results provide useful information to achieve magnetic nanodevices based on precessional switching.

  13. Pair-breaking effects by parallel magnetic field in electric-field-induced surface superconductivity

    International Nuclear Information System (INIS)

    Nabeta, Masahiro; Tanaka, Kenta K.; Onari, Seiichiro; Ichioka, Masanori

    2016-01-01

    Highlights: • Zeeman effect shifts superconducting gaps of sub-band system, towards pair-breaking. • Higher-level sub-bands become normal-state-like electronic states by magnetic fields. • Magnetic field dependence of zero-energy DOS reflects multi-gap superconductivity. - Abstract: We study paramagnetic pair-breaking in electric-field-induced surface superconductivity, when magnetic field is applied parallel to the surface. The calculation is performed by Bogoliubov-de Gennes theory with s-wave pairing, including the screening effect of electric fields by the induced carriers near the surface. Due to the Zeeman shift by applied fields, electronic states at higher-level sub-bands become normal-state-like. Therefore, the magnetic field dependence of Fermi-energy density of states reflects the multi-gap structure in the surface superconductivity.

  14. Field-induced magnetic phases and electric polarization in LiNiPO4

    DEFF Research Database (Denmark)

    Jensen, Thomas Bagger Stibius; Christensen, Niels Bech; Kenzelmann, M.

    2009-01-01

    Neutron diffraction is used to probe the (H,T) phase diagram of magnetoelectric (ME) LiNiPO4 for magnetic fields along the c axis. At zero field the Ni spins order in two antiferromagnetic phases. One has commensurate (C) structures and general ordering vectors k(C)=(0,0,0); the other one...... is incommensurate (IC) with k(IC)=(0,q,0). At low temperatures the C order collapses above mu H-0=12 T and adopts an IC structure with modulation vector parallel to k(IC). We show that C order is required for the ME effect and establish how electric polarization results from a field-induced reduction in the total...

  15. Electromagnetic torque on the toroidal plasma and the error-field induced torque

    International Nuclear Information System (INIS)

    Pustovitov, V. D.

    2007-01-01

    The electromagnetic torque on the toroidal plasma is calculated assuming a linear plasma response to the applied perturbation, which may be the error field or the field created by the correction coils, or both. The result is compared with recently published expressions for the error field induced torque (Zheng et al 2006 Nucl. Fusion 46 L9, Zheng and Kotschenreuther 2006 Phys. Rev. Lett. 97 165001), and the conclusions of these papers are revised. We resolve the problem of the torque resonance raised there. It is shown that the strong increase in the torque due to the static error field must occur at the resistive wall mode stability limit and not at the no-wall stability limit

  16. Picosecond Electric-Field-Induced Threshold Switching in Phase-Change Materials.

    Science.gov (United States)

    Zalden, Peter; Shu, Michael J; Chen, Frank; Wu, Xiaoxi; Zhu, Yi; Wen, Haidan; Johnston, Scott; Shen, Zhi-Xun; Landreman, Patrick; Brongersma, Mark; Fong, Scott W; Wong, H-S Philip; Sher, Meng-Ju; Jost, Peter; Kaes, Matthias; Salinga, Martin; von Hoegen, Alexander; Wuttig, Matthias; Lindenberg, Aaron M

    2016-08-05

    Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as well as crystal nucleation assisted models have been employed to explain the electronic breakdown. Here, picosecond electric pulses are used to excite amorphous Ag_{4}In_{3}Sb_{67}Te_{26}. Field-dependent reversible changes in conductivity and pulse-driven crystallization are observed. The present results show that threshold switching can take place within the electric pulse on subpicosecond time scales-faster than crystals can nucleate. This supports purely electronic models of threshold switching and reveals potential applications as an ultrafast electronic switch.

  17. Studying the universality of field induced tunnel ionization times via high-order harmonic spectroscopy

    International Nuclear Information System (INIS)

    Soifer, H; Bruner, B D; Dudovich, N; Negro, M; Devetta, M; Vozzi, C; Faccialà, D; Silvestri, S de; Stagira, S

    2014-01-01

    High-harmonic generation spectroscopy is a promising tool for resolving electron dynamics and structure in atomic and molecular systems. This scheme, commonly described by the strong field approximation, requires a deep insight into the basic mechanism that leads to the harmonic generation. Recently, we have demonstrated the ability to resolve the first stage of the process—field induced tunnel ionization—by adding a weak perturbation to the strong fundamental field. Here we generalize this approach and show that the assumptions behind the strong field approximation are valid over a wide range of tunnel ionization conditions. Performing a systematic study—modifying the fundamental wavelength, intensity and atomic system—we observed a good agreement with quantum path analysis over a range of Keldysh parameters. The generality of this scheme opens new perspectives in high harmonics spectroscopy, holding the potential of probing large, complex molecular systems. (paper)

  18. An Analysis of Ripple and Error Fields Induced by a Blanket in the CFETR

    Science.gov (United States)

    Yu, Guanying; Liu, Xufeng; Liu, Songlin

    2016-10-01

    The Chinese Fusion Engineering Tokamak Reactor (CFETR) is an important intermediate device between ITER and DEMO. The Water Cooled Ceramic Breeder (WCCB) blanket whose structural material is mainly made of Reduced Activation Ferritic/Martensitic (RAFM) steel, is one of the candidate conceptual blanket design. An analysis of ripple and error field induced by RAFM steel in WCCB is evaluated with the method of static magnetic analysis in the ANSYS code. Significant additional magnetic field is produced by blanket and it leads to an increased ripple field. Maximum ripple along the separatrix line reaches 0.53% which is higher than 0.5% of the acceptable design value. Simultaneously, one blanket module is taken out for heating purpose and the resulting error field is calculated to be seriously against the requirement. supported by National Natural Science Foundation of China (No. 11175207) and the National Magnetic Confinement Fusion Program of China (No. 2013GB108004)

  19. Emission characteristics in solution-processed asymmetric white alternating current field-induced polymer electroluminescent devices

    Science.gov (United States)

    Chen, Yonghua; Xia, Yingdong; Smith, Gregory M.; Gu, Yu; Yang, Chuluo; Carroll, David L.

    2013-01-01

    In this work, the emission characteristics of a blue fluorophor poly(9, 9-dioctylfluorene) (PFO) combined with a red emitting dye: Bis(2-methyl-dibenzo[f,h]quinoxaline)(acetylacetonate)iridium (III) [Ir(MDQ)2(acac)], are examined in two different asymmetric white alternating current field-induced polymer electroluminescent (FIPEL) device structures. The first is a top-contact device in which the triplet transfer is observed resulting in the concentration-dependence of the emission similar to the standard organic light-emitting diode (OLED) structure. The second is a bottom-contact device which, however, exhibits concentration-independence of emission. Specifically, both dye emission and polymer emission are found for the concentrations as high as 10% by weight of the dye in the emitter. We attribute this to the significant different carrier injection characteristics of the two FIPEL devices. Our results suggest a simple and easy way to realize high-quality white emission.

  20. Enhanced electrocatalytic CO2 reduction via field-induced reagent concentration

    Science.gov (United States)

    Liu, Min; Pang, Yuanjie; Zhang, Bo; de Luna, Phil; Voznyy, Oleksandr; Xu, Jixian; Zheng, Xueli; Dinh, Cao Thang; Fan, Fengjia; Cao, Changhong; de Arquer, F. Pelayo García; Safaei, Tina Saberi; Mepham, Adam; Klinkova, Anna; Kumacheva, Eugenia; Filleter, Tobin; Sinton, David; Kelley, Shana O.; Sargent, Edward H.

    2016-09-01

    Electrochemical reduction of carbon dioxide (CO2) to carbon monoxide (CO) is the first step in the synthesis of more complex carbon-based fuels and feedstocks using renewable electricity. Unfortunately, the reaction suffers from slow kinetics owing to the low local concentration of CO2 surrounding typical CO2 reduction reaction catalysts. Alkali metal cations are known to overcome this limitation through non-covalent interactions with adsorbed reagent species, but the effect is restricted by the solubility of relevant salts. Large applied electrode potentials can also enhance CO2 adsorption, but this comes at the cost of increased hydrogen (H2) evolution. Here we report that nanostructured electrodes produce, at low applied overpotentials, local high electric fields that concentrate electrolyte cations, which in turn leads to a high local concentration of CO2 close to the active CO2 reduction reaction surface. Simulations reveal tenfold higher electric fields associated with metallic nanometre-sized tips compared to quasi-planar electrode regions, and measurements using gold nanoneedles confirm a field-induced reagent concentration that enables the CO2 reduction reaction to proceed with a geometric current density for CO of 22 milliamperes per square centimetre at -0.35 volts (overpotential of 0.24 volts). This performance surpasses by an order of magnitude the performance of the best gold nanorods, nanoparticles and oxide-derived noble metal catalysts. Similarly designed palladium nanoneedle electrocatalysts produce formate with a Faradaic efficiency of more than 90 per cent and an unprecedented geometric current density for formate of 10 milliamperes per square centimetre at -0.2 volts, demonstrating the wider applicability of the field-induced reagent concentration concept.

  1. Transition conductivity study of high temperature superconductor compounds: the role of fluctuations

    International Nuclear Information System (INIS)

    Pagnon, V.

    1991-04-01

    This memory subject is the transition conductivity study of high temperature superconductors in corelation with their anisotropy. Systematic conductivity measurements were made on YBaCuO and BaSrCaCuO in relation with temperature from 4.2 K to 1200 K, and with a magnetic field up to 8 T in several directions. Oxygen order has an effect on the characteristics at YBaCuO transition conductivity. The activation energy for oxygen absorption is about 0.5eV. One method of analysis of the conductivity fluctuations about the transition temperature is proposed. Two separate rates are noticeable in YBaCuO compound. The 3 D fluctuations rate in the immediate neighbourghood of the transition lets place to the 2 D fluctuations rate at high temperature. Transitions temperatures governing each rate are different, that's incompatible with the formula proposed by Lawrence and Doniach. On the other hand, the analogy with quasi-2 D magnetic systems seems more relevant. A magnetic field application or a lowering of oxygen concentration removes the 3 D fluctuations rate. Non ohmic effects observed at the transition conductivity foot are analysis as a non-linear 2 D excitation manifestation of the supraconductive phase. Finally, by measurements on strontium doped YBaCuO crystals, we confirm a metal-insulator transition along the C-Axe when oxygen concentration reduces. This is connected with the specific heat jump. All these results uplighten the fundamental bidimensional character of high transition temperature superconductivity [fr

  2. In-field X-ray and neutron diffraction studies of re-entrant charge-ordering and field induced metastability in La0.175Pr0.45Ca0.375MnO3-δ

    Science.gov (United States)

    Sharma, Shivani; Shahee, Aga; Yadav, Poonam; da Silva, Ivan; Lalla, N. P.

    2017-11-01

    Low-temperature high-magnetic field (2 K, 8 T) (LTHM) powder X-ray diffraction (XRD) and time of flight powder neutron diffraction (NPD), low-temperature transmission electron microscopic (TEM), and resistivity and magnetization measurements have been carried out to investigate the re-entrant charge ordering (CO), field induced structural phase transitions, and metastability in phase-separated La0.175Pr0.45Ca0.375MnO3-δ (LPCMO). Low-temperature TEM and XRD studies reveal that on cooling under zero-field, paramagnetic Pnma phase transforms to P21/m CO antiferromagnetic (AFM) insulating phase below ˜233 K. Unlike reported literature, no structural signature of CO AFM P21/m to ferromagnetic (FM) Pnma phase-transition during cooling down to 2 K under zero-field was observed. However, the CO phase was found to undergo a re-entrant transition at ˜40 K. Neutron diffraction studies revealed a pseudo CE type spin arrangement of the observed CO phase. The low-temperature resistance, while cooled under zero-field, shows insulator to metal like transition below ˜105 K with minima at ˜25 K. On application of field, the CO P21/m phase was found to undergo field-induced transition to FM Pnma phase, which shows irreversibility on field removal below ˜40 K. Zero-field warming XRD and NPD studies reveal that field-induced FM Pnma phase is a metastable phase, which arise due to the arrest of kinetics of the first-order phase transition of FM Pnma to CO-AFM P21/m phase, below 40 K. Thus, a strong magneto-structural coupling is observed for this system. A field-temperature (H-T) phase-diagram has been constructed based on the LTHM-XRD, which matches very nicely with the reported H-T phase-diagram constructed based on magnetic measurements. Due to the occurrence of gradual growth of the re-entrant CO phase and the absence of a clear structural signature of phase-separation of CO-AFM P21/m and FM Pnma phases, the H-T minima in the phase-diagram of the present LPCMO sample has been

  3. Isostructural magnetic phase transition and magnetocaloric effect in Ising antiferromagnet

    International Nuclear Information System (INIS)

    Lavanov, G.Yu; Kalita, V.M.; Loktev, V.M.

    2014-01-01

    It is shown that the external magnetic field induced isostructural I st order magnetic phase transition between antiferromagnetic phases with different antiferromagnetic vector values is associated with entropy. It is found, that depending on temperature the entropy jump and the related heat release change their sign at this transition point. In the low-temperature region of metamagnetic I st order phase tensition the entropy jump is positive, and in the triple point region this jump for isostructural magnetic transition is negative

  4. Cryogenic microwave imaging of metal–insulator transition in doped silicon

    KAUST Repository

    Kundhikanjana, Worasom; Lai, Keji; Kelly, Michael A.; Shen, Zhi-Xun

    2011-01-01

    We report the instrumentation and experimental results of a cryogenic scanning microwave impedance microscope. The microwave probe and the scanning stage are located inside the variable temperature insert of a helium cryostat. Microwave signals in the distance modulation mode are used for monitoring the tip-sample distance and adjusting the phase of the two output channels. The ability to spatially resolve the metal-insulator transition in a doped silicon sample is demonstrated. The data agree with a semiquantitative finite element simulation. Effects of the thermal energy and electric fields on local charge carriers can be seen in the images taken at different temperatures and dc biases. © 2011 American Institute of Physics.

  5. Correlation between the nucleation of a Griffiths-like Phase and Colossal Magnetoresistance across the compositional metal-insulator boundary in La1-xCaxMnO3

    International Nuclear Information System (INIS)

    Jiang Wanjun; Zhou Xuezhi; Williams, Gwyn; Privezentsev, R; Mukovskii, Y

    2010-01-01

    Detailed measurements of the magnetic and transport properties of single crystals La 1-x Ca x MnO 3 (0.18 ≤ x ≤ 0.27) are summarized; comparisons between which (i) not only confirm that Griffiths Phase-like(GP) features are not a prerequisite for CMR, but also demonstrate that the presence of GP-like characteristics do not guarantee the appearance of CMR; (ii) indicate that whereas continuous magnetic transitions occur for 0.18 ≤ x ≤ 0.25, the universality class of these transitions belongs to that of nearest-neighbour 3D Heisenberg model only for x ≤ 0.20, beyond which complications due to GP-like behaviour occur.

  6. Model for field-induced reorientation strain in magnetic shape memory alloy with tensile and compressive loads

    International Nuclear Information System (INIS)

    Zhu Yuping; Dui Guansuo

    2008-01-01

    A model based on the micromechanical and the thermodynamic theory is presented for field-induced martensite reorientation in magnetic shape memory alloy (MSMA) single crystals. The influence of variants morphology and the material property to constitutive behavior is considered. The nonlinear and hysteretic strain and magnetization response of MSMA are investigated for two main loading cases, namely the magnetic field-induced reorientation of variants under constant compressive stress and tensile stress. The predicted results have shown that increasing tensile loading reduces the required field for actuation, while increasing compressive loads result in the required magnetic field growing considerably. It is helpful to design the intelligent composite with MSMA fibers

  7. Filling- and interaction-driven Mott transition. Quantum cluster calculations within self-energy-functional theory

    International Nuclear Information System (INIS)

    Balzer, Matthias

    2008-01-01

    The central goal of this thesis is the examination of strongly correlated electron systems on the basis of the two-dimensional Hubbard model. We analyze how the properties of the Mott insulator change upon doping and with interaction strength. The numerical evaluation is done using quantum cluster approximations, which allow for a thermodynamically consistent description of the ground state properties. The framework of self-energy-functional theory offers great flexibility for the construction of cluster approximations. A detailed analysis sheds light on the quality and the convergence properties of different cluster approximations within the self-energy-functional theory. We use the one-dimensional Hubbard model for these examinations and compare our results with the exact solution. In two dimensions the ground state of the particle-hole symmetric model at half-filling is an antiferromagnetic insulator, independent of the interaction strength. The inclusion of short-range spatial correlations by our cluster approach leads to a considerable improvement of the antiferromagnetic order parameter as compared to dynamical mean-field theory. In the paramagnetic phase we furthermore observe a metal-insulator transition as a function of the interaction strength, which qualitatively differs from the pure mean-field scenario. Starting from the antiferromagnetic Mott insulator a filling-controlled metal-insulator transition in a paramagnetic metallic phase can be observed. Depending on the cluster approximation used an antiferromagnetic metallic phase may occur at first. In addition to long-range antiferromagnetic order, we also considered superconductivity in our calculations. The superconducting order parameter as a function of doping is in good agreement with other numerical methods, as well as with experimental results. (orig.)

  8. For progress in natural science: Materials international investigations of structural phase transformation and THz properties across metal–insulator transition in VO2/Al2O3 epitaxial films

    Directory of Open Access Journals (Sweden)

    Mengmeng Yang

    2015-10-01

    Full Text Available Vanadium dioxide (VO2 epitaxial thin films on (0001-oriented Al2O3 substrates were prepared using radio frequency (RF magnetron sputtering techniques. To study the metal-insulator-transition (MIT mechanism and extend the applications of VO2 epitaxial films at terahertz (THz band, temperature-dependent X-ray diffraction (XRD and THz time domain spectroscopy of the VO2 epitaxial films were performed. Both the lattice constants and THz transmission exhibited a similar and sharp transition that was similar to that observed for the electrical resistance. Consequently, the MIT of the VO2/Al2O3 epitaxial films should be co-triggered by the structural phase transition and electronic transition. Moreover, the very large resistance change (on the order of ~103 and THz response (with a transmission modulation ratio of ~87% in the VO2/Al2O3 epitaxial heterostructures are promising for electrical switch and electro-optical device applications.

  9. SEM technique for imaging and measuring electronic transport in nanocomposites based on electric field induced contrast

    Science.gov (United States)

    Jesse, Stephen [Knoxville, TN; Geohegan, David B [Knoxville, TN; Guillorn, Michael [Brooktondale, NY

    2009-02-17

    Methods and apparatus are described for SEM imaging and measuring electronic transport in nanocomposites based on electric field induced contrast. A method includes mounting a sample onto a sample holder, the sample including a sample material; wire bonding leads from the sample holder onto the sample; placing the sample holder in a vacuum chamber of a scanning electron microscope; connecting leads from the sample holder to a power source located outside the vacuum chamber; controlling secondary electron emission from the sample by applying a predetermined voltage to the sample through the leads; and generating an image of the secondary electron emission from the sample. An apparatus includes a sample holder for a scanning electron microscope having an electrical interconnect and leads on top of the sample holder electrically connected to the electrical interconnect; a power source and a controller connected to the electrical interconnect for applying voltage to the sample holder to control the secondary electron emission from a sample mounted on the sample holder; and a computer coupled to a secondary electron detector to generate images of the secondary electron emission from the sample.

  10. Transverse Space-Charge Field-Induced Plasma Dynamics for Ultraintense Electron-Beam Characterization

    Directory of Open Access Journals (Sweden)

    R. Tarkeshian

    2018-05-01

    Full Text Available Similarly to laser or x-ray beams, the interaction of sufficiently intense particle beams with neutral gases will result in the creation of plasma. In contrast to photon-based ionization, the strong unipolar field of a particle beam can generate a plasma where the electron population receives a large initial momentum kick and escapes, leaving behind unshielded ions. Measuring the properties of the ensuing Coulomb exploding ions—such as their kinetic energy distribution, yield, and spatial distribution—can provide information about the peak electric fields that are achieved in the electron beams. Particle-in-cell simulations and analytical models are presented for high-brightness electron beams of a few femtoseconds or even hundreds of attoseconds, and transverse beam sizes on the micron scale, as generated by today’s free electron lasers. Different density regimes for the utilization as a potential diagnostics are explored, and the fundamental differences in plasma dynamical behavior for e-beam or photon-based ionization are highlighted. By measuring the dynamics of field-induced ions for different gas and beam densities, a lower bound on the beam charge density can be obtained in a single shot and in a noninvasive way. The exponential dependency of the ionization yield on the beam properties can provide unprecedented spatial and temporal resolution, at the submicrometer and subfemtosecond scales, respectively, offering a practical and powerful approach to characterizing beams from accelerators at the frontiers of performance.

  11. Observatory geoelectric fields induced in a two-layer lithosphere during magnetic storms

    Science.gov (United States)

    Love, Jeffrey J.; Swidinsky, Andrei

    2015-01-01

    We report on the development and validation of an algorithm for estimating geoelectric fields induced in the lithosphere beneath an observatory during a magnetic storm. To accommodate induction in three-dimensional lithospheric electrical conductivity, we analyze a simple nine-parameter model: two horizontal layers, each with uniform electrical conductivity properties given by independent distortion tensors. With Laplace transformation of the induction equations into the complex frequency domain, we obtain a transfer function describing induction of observatory geoelectric fields having frequency-dependent polarization. Upon inverse transformation back to the time domain, the convolution of the corresponding impulse-response function with a geomagnetic time series yields an estimated geoelectric time series. We obtain an optimized set of conductivity parameters using 1-s resolution geomagnetic and geoelectric field data collected at the Kakioka, Japan, observatory for five different intense magnetic storms, including the October 2003 Halloween storm; our estimated geoelectric field accounts for 93% of that measured during the Halloween storm. This work demonstrates the need for detailed modeling of the Earth’s lithospheric conductivity structure and the utility of co-located geomagnetic and geoelectric monitoring.

  12. Particle roughness in magnetorheology: effect on the strength of the field-induced structures

    International Nuclear Information System (INIS)

    Vereda, F; Segovia-Gutiérrez, J P; De Vicente, J; Hidalgo-Alvarez, R

    2015-01-01

    We report a study on the effect of particle roughness on the strength of the field-induced structures of magnetorheological (MR) fluids in the quasi-static regime. We prepared one set of MR fluids with carbonyl iron particles and another set with magnetite particles, and in both sets we had particles with different degrees of surface roughness. Small amplitude oscillatory shear (SAOS) magnetosweeps and steady shear (SS) tests were carried out on the suspensions to measure their elastic modulus (G′) and static yield stress (τ static ). Results for both the iron and the magnetite sets of suspensions were consistent: for the MR fluids prepared with rougher particles, G′ increased at smaller fields and τ static was ca. 20% larger than for the suspensions prepared with relatively smooth particles. In addition to the experimental study, we carried out finite element method calculations to assess the effect of particle roughness on the magnetic interaction between particles. These calculations showed that roughness can facilitate the magnetization of the particles, thus increasing the magnetic energy of the system for a given field, but that this effect depends on the concrete morphology of the surface. For our real systems, no major differences were observed between the magnetization cycles of the MR fluids prepared with particles with different degree of roughness, which implied that the effect of roughness on the measured G′ and τ static was due mainly to friction between the solid surfaces of adjacent particles. (paper)

  13. The influence of sulcus width on simulated electric fields induced by transcranial magnetic stimulation

    International Nuclear Information System (INIS)

    Janssen, A M; Rampersad, S M; Stegeman, D F; Oostendorp, T F; Lucka, F; Lanfer, B; Aydin, Ü; Wolters, C H; Lew, S

    2013-01-01

    Volume conduction models can help in acquiring knowledge about the distribution of the electric field induced by transcranial magnetic stimulation. One aspect of a detailed model is an accurate description of the cortical surface geometry. Since its estimation is difficult, it is important to know how accurate the geometry has to be represented. Previous studies only looked at the differences caused by neglecting the complete boundary between cerebrospinal fluid (CSF) and grey matter (Thielscher et al 2011 NeuroImage 54 234–43, Bijsterbosch et al 2012 Med. Biol. Eng. Comput. 50 671–81), or by resizing the whole brain (Wagner et al 2008 Exp. Brain Res. 186 539–50). However, due to the high conductive properties of the CSF, it can be expected that alterations in sulcus width can already have a significant effect on the distribution of the electric field. To answer this question, the sulcus width of a highly realistic head model, based on T1-, T2- and diffusion-weighted magnetic resonance images, was altered systematically. This study shows that alterations in the sulcus width do not cause large differences in the majority of the electric field values. However, considerable overestimation of sulcus width produces an overestimation of the calculated field strength, also at locations distant from the target location. (paper)

  14. Effects of coil orientation on the electric field induced by TMS over the hand motor area

    International Nuclear Information System (INIS)

    Laakso, Ilkka; Hirata, Akimasa; Ugawa, Yoshikazu

    2014-01-01

    Responses elicited by transcranial magnetic stimulation (TMS) over the hand motor area depend on the position and orientation of the stimulating coil. In this work, we computationally investigate the induced electric field for multiple coil orientations and locations in order to determine which parts of the brain are affected and how the sensitivity of motor cortical activation depends on the direction of the electric field. The finite element method is used for calculating the electric field induced by TMS in two individual anatomical models of the head and brain. The orientation of the coil affects both the strength and depth of penetration of the electric field, and the field strongly depends on the direction of the sulcus, where the target neurons are located. The coil position that gives the strongest electric field in the target cortical region may deviate from the closest scalp location by a distance on the order of 1 cm. Together with previous experimental data, the results support the hypothesis that the cortex is most sensitive to fields oriented perpendicular to the cortical layers, while it is relatively insensitive to fields parallel to them. This has important implications for targeting of TMS. To determine the most effective coil position and orientation, it is essential to consider both biological (the direction of the targeted axons) and physical factors (the strength and direction of the electric field). (paper)

  15. The influence of sulcus width on simulated electric fields induced by transcranial magnetic stimulation

    Science.gov (United States)

    Janssen, A. M.; Rampersad, S. M.; Lucka, F.; Lanfer, B.; Lew, S.; Aydin, Ü.; Wolters, C. H.; Stegeman, D. F.; Oostendorp, T. F.

    2013-07-01

    Volume conduction models can help in acquiring knowledge about the distribution of the electric field induced by transcranial magnetic stimulation. One aspect of a detailed model is an accurate description of the cortical surface geometry. Since its estimation is difficult, it is important to know how accurate the geometry has to be represented. Previous studies only looked at the differences caused by neglecting the complete boundary between cerebrospinal fluid (CSF) and grey matter (Thielscher et al 2011 NeuroImage 54 234-43, Bijsterbosch et al 2012 Med. Biol. Eng. Comput. 50 671-81), or by resizing the whole brain (Wagner et al 2008 Exp. Brain Res. 186 539-50). However, due to the high conductive properties of the CSF, it can be expected that alterations in sulcus width can already have a significant effect on the distribution of the electric field. To answer this question, the sulcus width of a highly realistic head model, based on T1-, T2- and diffusion-weighted magnetic resonance images, was altered systematically. This study shows that alterations in the sulcus width do not cause large differences in the majority of the electric field values. However, considerable overestimation of sulcus width produces an overestimation of the calculated field strength, also at locations distant from the target location.

  16. Field induced spontaneous quasiparticle decay and renormalization of quasiparticle dispersion in a quantum antiferromagnet.

    Science.gov (United States)

    Hong, Tao; Qiu, Y; Matsumoto, M; Tennant, D A; Coester, K; Schmidt, K P; Awwadi, F F; Turnbull, M M; Agrawal, H; Chernyshev, A L

    2017-05-05

    The notion of a quasiparticle, such as a phonon, a roton or a magnon, is used in modern condensed matter physics to describe an elementary collective excitation. The intrinsic zero-temperature magnon damping in quantum spin systems can be driven by the interaction of the one-magnon states and multi-magnon continuum. However, detailed experimental studies on this quantum many-body effect induced by an applied magnetic field are rare. Here we present a high-resolution neutron scattering study in high fields on an S=1/2 antiferromagnet C 9 H 18 N 2 CuBr 4 . Compared with the non-interacting linear spin-wave theory, our results demonstrate a variety of phenomena including field-induced renormalization of one-magnon dispersion, spontaneous magnon decay observed via intrinsic linewidth broadening, unusual non-Lorentzian two-peak structure in the excitation spectra and a dramatic shift of spectral weight from one-magnon state to the two-magnon continuum.

  17. The Influence of Acoustic Field Induced by HRT on Oscillation Behavior of a Single Droplet

    Directory of Open Access Journals (Sweden)

    Can Ruan

    2017-01-01

    Full Text Available This paper presents an experimental and theoretical study on the effects of an acoustic field induced by Hartmann Resonance Tube (HRT on droplet deformation behavior. The characteristics of the acoustic field generated by HRT are investigated. Results show that the acoustic frequency decreases with the increase of the resonator length, the sound pressure level (SPL increases with the increase of nozzle pressure ratio (NPR, and it is also noted that increasing resonator length can cause SPL to decrease, which has rarely been reported in published literature. Further theoretical analysis reveals that the resonance frequency of a droplet has several modes, and when the acoustic frequency equals the droplet’s frequency, heightened droplet responses are observed with the maximum amplitude of the shape oscillation. The experimental results for different resonator cavity lengths, nozzle pressure ratios and droplet diameters confirm the non-linear nature of this problem, and this conclusion is in good agreement with theoretical analysis. Measurements by high speed camera have shown that the introduction of an acoustic field can greatly enhance droplet oscillation, which means with the use of an ultrasonic atomizer based on HRT, the quality of atomization and combustion can be highly improved.

  18. Magnetic-field induced bistability in a quasi-one-dimensional semiconductor microcavity

    International Nuclear Information System (INIS)

    Zhang, Chuanyi; Zhang, Weifeng

    2015-01-01

    We theoretically study the magnetic-field induced bistability in a quasi-one-dimensional semiconductor microcavity. A critical magnetic field is obtained, and the bistability appears if a magnetic field is greater than the critical value. For a positive energy detuning of the pump from the bare exciton polaritons, one bistability loop first emerges, then it divides into two loops, and finally one of them vanishes with the increasing magnetic field. This phenomenon originates from the magnetic-field modulated interactions for opposite spins. In the variational process, there are two important effects: one is a logic gate with a small variation of the excitation laser, and the other is a spin texture like skyrmion and this texture is periodic if the energy detuning varies periodically in real space, which is useful for designing the spin-dependent optoelectronic devices. - Highlights: • We study the bistability induced by a magnetic field in a microcavity. • One bistability loop can divide into two, and then the two loops return to one. • A spin texture like skyrmion and logic gate arise in the variation of bistability loop

  19. Excitations in the field-induced quantum spin liquid state of α-RuCl3

    Science.gov (United States)

    Banerjee, Arnab; Lampen-Kelley, Paula; Knolle, Johannes; Balz, Christian; Aczel, Adam Anthony; Winn, Barry; Liu, Yaohua; Pajerowski, Daniel; Yan, Jiaqiang; Bridges, Craig A.; Savici, Andrei T.; Chakoumakos, Bryan C.; Lumsden, Mark D.; Tennant, David Alan; Moessner, Roderich; Mandrus, David G.; Nagler, Stephen E.

    2018-03-01

    The celebrated Kitaev quantum spin liquid (QSL) is the paradigmatic example of a topological magnet with emergent excitations in the form of Majorana Fermions and gauge fluxes. Upon breaking of time-reversal symmetry, for example in an external magnetic field, these fractionalized quasiparticles acquire non-Abelian exchange statistics, an important ingredient for topologically protected quantum computing. Consequently, there has been enormous interest in exploring possible material realizations of Kitaev physics and several candidate materials have been put forward, recently including α-RuCl3. In the absence of a magnetic field this material orders at a finite temperature and exhibits low-energy spin wave excitations. However, at moderate energies, the spectrum is unconventional and the response shows evidence for fractional excitations. Here we use time-of-flight inelastic neutron scattering to show that the application of a sufficiently large magnetic field in the honeycomb plane suppresses the magnetic order and the spin waves, leaving a gapped continuum spectrum of magnetic excitations. Our comparisons of the scattering to the available calculations for a Kitaev QSL show that they are consistent with the magnetic field induced QSL phase.

  20. Tunnel Oxides Formed by Field-Induced Anodisation for Passivated Contacts of Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Jingnan Tong

    2018-02-01

    Full Text Available Tunnel silicon oxides form a critical component for passivated contacts for silicon solar cells. They need to be sufficiently thin to allow carriers to tunnel through and to be uniform both in thickness and stoichiometry across the silicon wafer surface, to ensure uniform and low recombination velocities if high conversion efficiencies are to be achieved. This paper reports on the formation of ultra-thin silicon oxide layers by field-induced anodisation (FIA, a process that ensures uniform oxide thickness by passing the anodisation current perpendicularly through the wafer to the silicon surface that is anodised. Spectroscopical analyses show that the FIA oxides contain a lower fraction of Si-rich sub-oxides compared to wet-chemical oxides, resulting in lower recombination velocities at the silicon and oxide interface. This property along with its low temperature formation highlights the potential for FIA to be used to form low-cost tunnel oxide layers for passivated contacts of silicon solar cells.

  1. The effect of magnetic field induced aggregates on ultrasound propagation in aqueous magnetic fluid

    International Nuclear Information System (INIS)

    Parekh, Kinnari; Upadhyay, R.V.

    2017-01-01

    Ultrasonic wave propagation in the aqueous magnetic fluid is investigated for different particle concentrations. The sound velocity decreases while acoustic impedance increases with increasing concentrations. The velocity anisotropy is observed upon application of magnetic field. The velocity anisotropy fits with Tarapov’s theory suggests the presence of aggregates in the system. We report that these aggregates are thermodynamically unstable and the length of aggregate changes continuously with increasing concentration and, or magnetic field and resulted in a decrease in effective magnetic moment. The Taketomi's theory fits well with the experimental data suggesting that the particle clusters are aligned in the direction of the magnetic field. The radius of cluster found to increase with increasing concentration, and then decreases whereas the elastic force constant increases and then becomes constant. The increase in cluster radius indicates elongation of aggregate length due to tip-to-tip interaction of aggregates whereas for higher concentration, the lateral alignment is more favorable than tip-to-tip alignment of aggregates which reduces the cluster radius making elastic force constant to raise. Optical images show that the chains are fluctuating and confirming the lateral alignment of chains at higher fields. - Highlights: • Magnetic field induced aggregates investigated using ultrasonic wave in aqueous magnetic fluid. • Velocity anisotropy induces upon applications of magnetic field. • Tarapov’s theory fit shows reduction in effective magnetic moment as concentration increases. • Taketomi's theory shows alignment of clusters in field direction. • Cluster radius increases and then decreases with increasing volume fractions. • Optical images show that fluctuating chains and lateral alignment of chains at higher fields.

  2. The effect of magnetic field induced aggregates on ultrasound propagation in aqueous magnetic fluid

    Energy Technology Data Exchange (ETDEWEB)

    Parekh, Kinnari, E-mail: kinnariparekh.rnd@charusat.ac.in [Dr. KC Patel R& D Center, Charotar University of Science & Technology, Changa, 388421 Dist. Anand, Gujarat (India); Upadhyay, R.V. [PD Patel Institute of Applied Sciences, Charotar University of Science & Technology, Changa, 388421 Dist. Anand, Gujarat (India)

    2017-06-01

    Ultrasonic wave propagation in the aqueous magnetic fluid is investigated for different particle concentrations. The sound velocity decreases while acoustic impedance increases with increasing concentrations. The velocity anisotropy is observed upon application of magnetic field. The velocity anisotropy fits with Tarapov’s theory suggests the presence of aggregates in the system. We report that these aggregates are thermodynamically unstable and the length of aggregate changes continuously with increasing concentration and, or magnetic field and resulted in a decrease in effective magnetic moment. The Taketomi's theory fits well with the experimental data suggesting that the particle clusters are aligned in the direction of the magnetic field. The radius of cluster found to increase with increasing concentration, and then decreases whereas the elastic force constant increases and then becomes constant. The increase in cluster radius indicates elongation of aggregate length due to tip-to-tip interaction of aggregates whereas for higher concentration, the lateral alignment is more favorable than tip-to-tip alignment of aggregates which reduces the cluster radius making elastic force constant to raise. Optical images show that the chains are fluctuating and confirming the lateral alignment of chains at higher fields. - Highlights: • Magnetic field induced aggregates investigated using ultrasonic wave in aqueous magnetic fluid. • Velocity anisotropy induces upon applications of magnetic field. • Tarapov’s theory fit shows reduction in effective magnetic moment as concentration increases. • Taketomi's theory shows alignment of clusters in field direction. • Cluster radius increases and then decreases with increasing volume fractions. • Optical images show that fluctuating chains and lateral alignment of chains at higher fields.

  3. Magnetic field induced augmented thermal conduction phenomenon in magneto-nanocolloids

    International Nuclear Information System (INIS)

    Katiyar, Ajay; Dhar, Purbarun; Nandi, Tandra; Das, Sarit K.

    2016-01-01

    Magnetic field induced augmented thermal conductivity of magneto-nanocolloids involving nanoparticles, viz. Fe_2O_3, Fe_3O_4, NiO and Co_3O_4 dispersed in different base fluids have been reported. Experiments reveal the augmented thermal transport under external applied magnetic field. A maximum thermal conductivity enhancement ∼114% is attained at 7.0 vol% concentration and 0.1 T magnetic flux density for Fe_3O_4/EG magneto-nanocolloid. However, a maximum ∼82% thermal conductivity enhancement is observed for Fe_3O_4/kerosene magneto-nanocolloid for the same concentration but relatively at low magnetic flux density (∼0.06 T). Thereby, a strong effect of fluid as well as particle physical properties on the chain formation propensity, leading to enhanced conduction, in such systems is observed. Co_3O_4 nanoparticles show insignificant effect on the thermal conductivity enhancement of MNCs due to their minimal magnetic moment. A semi-empirical approach has been proposed to understand the mechanism and physics behind the thermal conductivity enhancement under external applied magnetic field, in tune with near field magnetostatic interactions as well as Neel relaxivity of the magnetic nanoparticles. Furthermore, the model is able to predict the phenomenon of enhanced thermal conductivity as a function of physical parameters and shows good agreement with the experimental observations. - Highlights: • Heat conduction in magneto-nanocolloids augments tremendously under magnetic field. • Oxide nanoparticles of Fe, Ni and Co dispersed in variant base fluids are used. • Enhancement in heat conduction is due to the formation of thermally conductive chains. • Proposed semi-empirical model shows good agreement with the experimental results.

  4. Magnetic field induced augmented thermal conduction phenomenon in magneto-nanocolloids

    Energy Technology Data Exchange (ETDEWEB)

    Katiyar, Ajay, E-mail: ajay_cim@rediffmail.com [Research and Innovation Centre (DRDO), Indian Institute of Technology Madras Research Park, Chennai 600 113 (India); Department of Mechanical Engineering, Indian Institute of Technology Madras, Chennai 600 036 (India); Dhar, Purbarun, E-mail: purbarun@iitrpr.ac.in [Department of Mechanical Engineering, Indian Institute of Technology Madras, Chennai 600 036 (India); Nandi, Tandra, E-mail: tandra_n@rediffmail.com [Defence Materials and Stores Research and Development Establishment (DRDO), G.T. Road, Kanpur 208 013 (India); Das, Sarit K., E-mail: skdas@iitrpr.ac.in [Department of Mechanical Engineering, Indian Institute of Technology Madras, Chennai 600 036 (India)

    2016-12-01

    Magnetic field induced augmented thermal conductivity of magneto-nanocolloids involving nanoparticles, viz. Fe{sub 2}O{sub 3}, Fe{sub 3}O{sub 4}, NiO and Co{sub 3}O{sub 4} dispersed in different base fluids have been reported. Experiments reveal the augmented thermal transport under external applied magnetic field. A maximum thermal conductivity enhancement ∼114% is attained at 7.0 vol% concentration and 0.1 T magnetic flux density for Fe{sub 3}O{sub 4}/EG magneto-nanocolloid. However, a maximum ∼82% thermal conductivity enhancement is observed for Fe{sub 3}O{sub 4}/kerosene magneto-nanocolloid for the same concentration but relatively at low magnetic flux density (∼0.06 T). Thereby, a strong effect of fluid as well as particle physical properties on the chain formation propensity, leading to enhanced conduction, in such systems is observed. Co{sub 3}O{sub 4} nanoparticles show insignificant effect on the thermal conductivity enhancement of MNCs due to their minimal magnetic moment. A semi-empirical approach has been proposed to understand the mechanism and physics behind the thermal conductivity enhancement under external applied magnetic field, in tune with near field magnetostatic interactions as well as Neel relaxivity of the magnetic nanoparticles. Furthermore, the model is able to predict the phenomenon of enhanced thermal conductivity as a function of physical parameters and shows good agreement with the experimental observations. - Highlights: • Heat conduction in magneto-nanocolloids augments tremendously under magnetic field. • Oxide nanoparticles of Fe, Ni and Co dispersed in variant base fluids are used. • Enhancement in heat conduction is due to the formation of thermally conductive chains. • Proposed semi-empirical model shows good agreement with the experimental results.

  5. Model of electric field-induced charge disordering in praseodymium manganites

    International Nuclear Information System (INIS)

    Lapinskas, S.; Tornau, E.E.; Semiconductor Physics Inst., Vilnius

    2001-01-01

    We propose a model for an electric field-driven transition from the ordered NaCl-type phase to the disordered phase. Such a transition might be a prototype of charge disordering transition observed in Pr 1-c Ca c MnO 3 . We assume the lattice-gas model and hopping conductivity of charge carriers. The solution of this model, performed by the Monte Carlo method, demonstrates that considerably high electric field can disorder well-ordered phases. The comparison with the data for charge disordering in Pr 1-c Ca c MnO 3 shows that required fields are much too high. We analyze the obtained results trying to determine a possible scenario for conductivity in Pr 1-c Ca c MnO 3 . (orig.)

  6. Windows open for highly tunable magnetostructural phase transitions

    KAUST Repository

    Li, Y.; Wei, Z. Y.; Zhang, H. G.; Liu, E. K.; Luo, H. Z.; Liu, G. D.; Xi, X. K.; Wang, S. G.; Wang, W. H.; Yue, M.; Wu, G. H.; Zhang, Xixiang

    2016-01-01

    established in the Mn1− yCoyNiGe1− xSix system. Throughout the CTWs, the magnetic-field-induced metamagnetic behavior and giant magnetocaloric effects are obtained. The (Mn,Co)Ni(Ge,Si) system shows great potential as multifunctional phase-transition materials

  7. Quantum–classical correspondence of a field induced KAM-type ...

    Indian Academy of Sciences (India)

    WINTEC

    Abstract. A transition from regular to chaotic behaviour in the dynamics of a classical Henon–Heiles oscillator in the presence of an external field is shown to have a similar quantum signature when studied using the pertaining phase portraits and the associated Kolmogorov–Sinai–Lyapunov entropies obtained through the ...

  8. The field-induced soliton phase of CuGeO3

    DEFF Research Database (Denmark)

    Rønnow, H.M.; Mechthild, E.; McMorrow, D.F.

    2003-01-01

    The quasi-1D S = 1/2 antiferromagnet CuGeO3 undergoes a spin-Peierls transition to a dimerised singlet quantum ground state, with S = 1 carrying pairs of domain walls as elementary excitations. Applying a large magnetic field, the domain walls-solitons-can be condensed into the ground state...

  9. Atomic Origins of Monoclinic-Tetragonal (Rutile) Phase Transition in Doped VO 2 Nanowires

    KAUST Repository

    Asayesh-Ardakani, Hasti

    2015-10-12

    There has been long-standing interest in tuning the metal-insulator phase transition in vanadium dioxide (VO) via the addition of chemical dopants. However, the underlying mechanisms by which doping elements regulate the phase transition in VO are poorly understood. Taking advantage of aberration-corrected scanning transmission electron microscopy, we reveal the atomistic origins by which tungsten (W) dopants influence the phase transition in single crystalline WVO nanowires. Our atomically resolved strain maps clearly show the localized strain normal to the (122¯) lattice planes of the low W-doped monoclinic structure (insulator). These strain maps demonstrate how anisotropic localized stress created by dopants in the monoclinic structure accelerates the phase transition and lead to relaxation of structure in tetragonal form. In contrast, the strain distribution in the high W-doped VO structure is relatively uniform as a result of transition to tetragonal (metallic) phase. The directional strain gradients are furthermore corroborated by density functional theory calculations that show the energetic consequences of distortions to the local structure. These findings pave the roadmap for lattice-stress engineering of the MIT behavior in strongly correlated materials for specific applications such as ultrafast electronic switches and electro-optical sensors.

  10. Enhanced superconductivity and superconductor to insulator transition in nano-crystalline molybdenum thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Shilpam; Amaladass, E.P. [Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Sharma, Neha [Surface & Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Harimohan, V. [Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Amirthapandian, S. [Materials Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Mani, Awadhesh, E-mail: mani@igcar.gov.in [Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India)

    2017-06-01

    Disorder driven superconductor to insulator transition via intermediate metallic regime is reported in nano-crystalline thin films of molybdenum. The nano-structured thin films have been deposited at room temperature using DC magnetron sputtering at different argon pressures. The grain size has been tuned using deposition pressure as the sole control parameter. A variation of particle sizes, room temperature resistivity and superconducting transition has been studied as a function of deposition pressure. The nano-crystalline molybdenum thin films are found to have large carrier concentration but very low mobility and electronic mean free path. Hall and conductivity measurements have been used to understand the effect of disorder on the carrier density and mobilities. Ioffe-Regel parameter is shown to correlate with the continuous metal-insulator transition in our samples. - Highlights: • Thin films of molybdenum using DC sputtering have been deposited on glass. • Argon background pressure during sputtering was used to tune the crystallite sizes of films. • Correlation in deposition pressure, disorder and particle sizes has been observed. • Disorder tuned superconductor to insulator transition along with an intermediate metallic phase has been observed. • Enhancement of superconducting transition temperature and a dome shaped T{sub C} vs. deposition pressure phase diagram has been observed.

  11. Atomic Origins of Monoclinic-Tetragonal (Rutile) Phase Transition in Doped VO2 Nanowires.

    Science.gov (United States)

    Asayesh-Ardakani, Hasti; Nie, Anmin; Marley, Peter M; Zhu, Yihan; Phillips, Patrick J; Singh, Sujay; Mashayek, Farzad; Sambandamurthy, Ganapathy; Low, Ke-Bin; Klie, Robert F; Banerjee, Sarbajit; Odegard, Gregory M; Shahbazian-Yassar, Reza

    2015-11-11

    There has been long-standing interest in tuning the metal-insulator phase transition in vanadium dioxide (VO2) via the addition of chemical dopants. However, the underlying mechanisms by which doping elements regulate the phase transition in VO2 are poorly understood. Taking advantage of aberration-corrected scanning transmission electron microscopy, we reveal the atomistic origins by which tungsten (W) dopants influence the phase transition in single crystalline WxV1-xO2 nanowires. Our atomically resolved strain maps clearly show the localized strain normal to the (122̅) lattice planes of the low W-doped monoclinic structure (insulator). These strain maps demonstrate how anisotropic localized stress created by dopants in the monoclinic structure accelerates the phase transition and lead to relaxation of structure in tetragonal form. In contrast, the strain distribution in the high W-doped VO2 structure is relatively uniform as a result of transition to tetragonal (metallic) phase. The directional strain gradients are furthermore corroborated by density functional theory calculations that show the energetic consequences of distortions to the local structure. These findings pave the roadmap for lattice-stress engineering of the MIT behavior in strongly correlated materials for specific applications such as ultrafast electronic switches and electro-optical sensors.

  12. Atomic Origins of Monoclinic-Tetragonal (Rutile) Phase Transition in Doped VO 2 Nanowires

    KAUST Repository

    Asayesh-Ardakani, Hasti; Nie, Anmin; Marley, Peter M.; Zhu, Yihan; Phillips, Patrick J.; Singh, Sujay; Mashayek, Farzad; Sambandamurthy, Ganapathy; Low, Ke Bin; Klie, Robert F.; Banerjee, Sarbajit; Odegard, Gregory M.; Shahbazian-Yassar, Reza

    2015-01-01

    There has been long-standing interest in tuning the metal-insulator phase transition in vanadium dioxide (VO) via the addition of chemical dopants. However, the underlying mechanisms by which doping elements regulate the phase transition in VO are poorly understood. Taking advantage of aberration-corrected scanning transmission electron microscopy, we reveal the atomistic origins by which tungsten (W) dopants influence the phase transition in single crystalline WVO nanowires. Our atomically resolved strain maps clearly show the localized strain normal to the (122¯) lattice planes of the low W-doped monoclinic structure (insulator). These strain maps demonstrate how anisotropic localized stress created by dopants in the monoclinic structure accelerates the phase transition and lead to relaxation of structure in tetragonal form. In contrast, the strain distribution in the high W-doped VO structure is relatively uniform as a result of transition to tetragonal (metallic) phase. The directional strain gradients are furthermore corroborated by density functional theory calculations that show the energetic consequences of distortions to the local structure. These findings pave the roadmap for lattice-stress engineering of the MIT behavior in strongly correlated materials for specific applications such as ultrafast electronic switches and electro-optical sensors.

  13. Thermophysical, Electrical, and Optical Properties of Selected Metal-Nonmetal Transition Materials: Comprehensive Bibliography with Typical Data.

    Science.gov (United States)

    1978-02-01

    Brueckner, G., " Positron Annihilation in Vanadium(IV) Oxide and Vanadium(III) Oxide," Zentralinst. Kernforsch., Rossendorf, Dresden, ZEK-295, 93-4, 1975...Phys.-Solid State, 17(5), 851-5, 1975. A000130. Andreeff, A. and Brauer, G., " Positron Annihilation Study of the Metal- Insulator Transition in V20 3...thermal expansion at 298 K. Sample N o. a TH l Mkta1 l c phase X - 0 . 0 0 20.2 0.3 - b6 . 0.3 0.04 TI 24.4 -5.6 4-moleli Mgo 25.5 2.0 -9.5 * 2.0 16

  14. Field-Induced Quantum Critical Point and Nodal Superconductivity in the Heavy-Fermion Superconductor Ce_{2}PdIn_{8}

    Directory of Open Access Journals (Sweden)

    J. K. Dong

    2011-09-01

    Full Text Available The in-plane resistivity ρ and thermal conductivity κ of the heavy-fermion superconductor Ce_{2}PdIn_{8} single crystals were measured down to 50 mK. A field-induced quantum critical point, occurring at the upper critical field H_{c2}, is demonstrated from the ρ(T∼T near H_{c2} and ρ(T∼T^{2} when further increasing the field. The large residual linear term κ_{0}/T at zero field and the rapid increase of κ(H/T at low field give evidence for nodal superconductivity in Ce_{2}PdIn_{8}. The jump of κ(H/T near H_{c2} suggests a first-order-like phase transition at low temperature. These results mimic the features of the famous CeCoIn_{5} superconductor, implying that Ce_{2}PdIn_{8} may be another interesting compound to investigate for the interplay between magnetism and superconductivity.

  15. Stress- and Magnetic Field-Induced Martensitic Transformation at Cryogenic Temperatures in Fe-Mn-Al-Ni Shape Memory Alloys

    Science.gov (United States)

    Xia, Ji; Xu, Xiao; Miyake, Atsushi; Kimura, Yuta; Omori, Toshihiro; Tokunaga, Masashi; Kainuma, Ryosuke

    2017-12-01

    Stress-induced and magnetic-field-induced martensitic transformation behaviors at low temperatures were investigated for Fe-Mn-Al-Ni alloys. The magnetic-field-induced reverse martensitic transformation was directly observed by in situ optical microscopy. Magnetization measurements under pulsed magnetic fields up to 50 T were carried out at temperatures between 4.2 and 125 K on a single-crystal sample; full magnetic-field-induced reverse martensitic transformation was confirmed at all tested temperatures. Compression tests from 10 to 100 K were conducted on a single-crystal sample; full shape recovery was obtained at all tested temperatures. It was found that the temperature dependence of both the critical stress and critical magnetic field is small and that the transformation hysteresis is less sensitive to temperature even at cryogenic temperatures. The temperature dependence of entropy change during martensitic transformation up to 100 K was then derived using the Clausius-Clapeyron relation with critical stresses and magnetic fields.

  16. Possibility of the field-induced spin-nematic phase in LiCuVO4

    International Nuclear Information System (INIS)

    Hagiwara, M; Fujita, T; Yamaguchi, H; Kimura, S; Omura, K; Svistov, L E; Smirnov, A I; Prokofiev, A; Honda, Z

    2011-01-01

    We report on the magnetization of the frustrated S = 1/2 chain compound LiCuVO 4 . In addition to the transition from a planar spiral to a spin modulated structure observed recently by NMR, another transition was observed just below the saturation field. This magnetic phase could be a spin nematic, namely a condensation of two magnon bound states, phase which was predicted theoretically in the S = 1/2 linear chain model with the nearest neighbor ferromagnetic and the next nearest neighbor antiferromagnetic exchange interactions. The slope of magnetization in this phase is in good agreement with a calculated one in a realistic quasi 2-dimensional model (M. E. Zhitomirsky and H. Tsunetsugu, Europhys. Lett. 92 37001 (2010)). We compare the observed phase diagram with a numerically calculated one and discuss the possibility of the spin nematic phase.

  17. Electric field-induced valley degeneracy lifting in uniaxial strained graphene: evidence from magnetophonon resonance

    OpenAIRE

    Assili, Mohamed; Haddad, Sonia; Kang, Woun

    2015-01-01

    A double peak structure in the magneto-phonon resonance (MPR) spectrum of uniaxial strained graphene, under crossed electric and magnetic fields, is predicted. We focus on the $\\Gamma$ point optical phonon modes coupled to the inter-Landau level transitions $0 \\leftrightarrows \\pm 1$ where MPR is expected to be more pronounced at high magnetic field. We derive the frequency shifts and the broadenings of the longitudinal (LO) and transverse (TO) optical phonon modes taking into account the eff...

  18. Reliability of the one-crossing approximation in describing the Mott transition

    Science.gov (United States)

    Vildosola, V.; Pourovskii, L. V.; Manuel, L. O.; Roura-Bas, P.

    2015-12-01

    We assess the reliability of the one-crossing approximation (OCA) approach in a quantitative description of the Mott transition in the framework of the dynamical mean field theory (DMFT). The OCA approach has been applied in conjunction with DMFT to a number of heavy-fermion, actinide, transition metal compounds and nanoscale systems. However, several recent studies in the framework of impurity models pointed out serious deficiencies of OCA and raised questions regarding its reliability. Here we consider a single band Hubbard model on the Bethe lattice at finite temperatures and compare the results of OCA to those of a numerically exact quantum Monte Carlo (QMC) method. The temperature-local repulsion U phase diagram for the particle-hole symmetric case obtained by OCA is in good agreement with that of QMC, with the metal-insulator transition captured very well. We find, however, that the insulator to metal transition is shifted to higher values of U and, simultaneously, correlations in the metallic phase are significantly overestimated. This counter-intuitive behaviour is due to simultaneous underestimations of the Kondo scale in the metallic phase and the size of the insulating gap. We trace the underestimation of the insulating gap to that of the second moment of the high-frequency expansion of the impurity spectral density. Calculations of the system away from the particle-hole symmetric case are also presented and discussed.

  19. Electric-field-induced flow-aligning state in a nematic liquid crystal.

    Science.gov (United States)

    Fatriansyah, Jaka Fajar; Orihara, Hiroshi

    2015-04-01

    The response of shear stress to a weak ac electric field as a probe is measured in a nematic liquid crystal under shear flow and dc electric fields. Two states with different responses are clearly observed when the dc electric field is changed at a constant shear rate: the flow aligning and non-flow aligning states. The director lies in the shear plane in the flow aligning state and out of the plane in the non-flow aligning state. Through application of dc electric field, the non-flow aligning state can be changed to the flow aligning state. In the transition from the flow aligning state to the non-flow aligning state, it is found that the response increases and the relaxation time becomes longer. Here, the experimental results in the flow aligning state are discussed on the basis of the Ericksen-Leslie theory.

  20. Competing exchange bias and field-induced ferromagnetism in La-doped BaFe O3

    Science.gov (United States)

    Fita, I.; Wisniewski, A.; Puzniak, R.; Iwanowski, P.; Markovich, V.; Kolesnik, S.; Dabrowski, B.

    2017-04-01

    An exchange bias (EB) effect was observed in mixed valent L axB a1 -xFe O3 (x =0.125 , 0.25, 0.33) perovskites exhibiting the antiferromagnetic (AFM) helical order among F e4 + ions coexisting with the ferromagnetic (FM) cluster phase in the ground state. The L a3 + ions for B a2 + site substitution, associated with increase in number of the AFM coupled F e3 + - F e4 + pairs as well as some F e3 + - F e3 + pairs, leads to strengthening of the AFM phase and consequently to the alteration of the EB characteristics, which depend on level of the La doping x . At low doping x ≤0.25 , an abnormal dependence of the EB field, HEB, on the cooling field, Hcool, was found. The HEB increases rapidly with increasing cooling field at low Hcool, but it falls suddenly at cooling fields higher than 20 kOe, reducing by an order of magnitude at 90 kOe. The suppression of EB is caused by the field-induced increased volume of the FM phase, due to the transformation of the AFM helical spin structure into the FM one. Thus, low-doped L axB a1 -xFe O3 demonstrates a competition of two alternate cooling-field-induced effects, one of which leads to the EB anisotropy and another one to the enhanced ferromagnetism. In contrast, the x =0.33 sample, having a strong AFM constituent, shows no field-induced FM and no drop in the EB field. Accordingly, the HEB vs Hcool dependence was found to be well explained in the framework of a model describing phase-separated AFM-FM systems, namely, the model assuming isolated FM clusters of size ˜4 nm embedded in the AFM matrix.

  1. Controlling molecular condensation/diffusion of copper phthalocyanine by local electric field induced with scanning tunneling microscope tip

    Science.gov (United States)

    Nagaoka, Katsumi; Yaginuma, Shin; Nakayama, Tomonobu

    2018-02-01

    We have discovered the condensation/diffusion phenomena of copper phthalocyanine (CuPc) molecules controlled with a pulsed electric field induced by the scanning tunneling microscope tip. This behavior is not explained by the conventional induced dipole model. In order to understand the mechanism, we have measured the electronic structure of the molecule by tunneling spectroscopy and also performed theoretical calculations on molecular orbitals. These data clearly indicate that the molecule is positively charged owing to charge transfer to the substrate, and that hydrogen bonding exists between CuPc molecules, which makes the molecular island stable.

  2. Visualization and quantification of four steps in magnetic field induced two-dimensional ordering of superparamagnetic submicron particles

    DEFF Research Database (Denmark)

    Gajula, Gnana Prakash; Neves Petersen, Teresa; Petersen, Steffen B.

    2010-01-01

    , resolved growth steps (condensation, polarization, co-linearity and concatenation), the average chain growth rate, and inter-particle interaction length were calculated in the presence of a 120 G external magnetic field using optical microscopy and ‘in-house' developed image analysis software......We hereby report a methodology that permits a quantitative investigation of the temporal self-organization of superparamagnetic nanoparticles in the presence of an external magnetic field. The kinetics of field-induced self-organization into linear chains, time-dependent chain-size distribution...

  3. Observation of field-induced long-range order in disordered Sr14Cu24O41

    International Nuclear Information System (INIS)

    Ohsugi, S.; Matsumoto, S.; Kitaoka, Y.; Matsuda, M.; Uehara, M.; Nagata, T.; Akimitsu, J.

    2004-01-01

    Field-induced magnetic order in a structural disordered single-crystal Sr 14 Cu 24 O 41 (Sr 14 -B) has been observed in the Cu-nuclear magnetic resonance (NMR) measurements for the ladder sites below 20 K under the magnetic field H∼11 T. For the Zhang Rice (ZR) sites in the chains, the spectrum splits below 20 K due to an appearance of the internal field, whereas that of less disordered Sr 14 -A does not. This gives an evidence of three-dimensional (3D) long-range (LR) ordering in Sr 14 -B below T N ∼20 K under H∼11 T

  4. A Systematic Transport and Thermodynamic Study of Heavy Transition Metal Oxides with Hexagonal Structure

    Science.gov (United States)

    Butrouna, Kamal

    There is no apparent, dominant interaction in heavy transition metal oxides (TMO), especially in 5d-TMO, where all relevant interactions are of comparable energy scales, and therefore strongly compete. In particular, the spin-orbit interaction (SOI) strongly competes with the electron-lattice and on-site Coulomb interaction (U). Therefore, any tool that allows one to tune the relative strengths of SOI and U is expected to offer an opportunity for the discovery and study of novel materials. BaIrO3 is a magnetic insulator driven by SOI, whereas the isostructural BaRuO3 is a paramagnetic metal. The contrasting ground states have been shown to result from the critical role of SOI in the iridate. This dissertation thoroughly examines a wide array of newly observed novel phenomena induced by adjusting the relative strengths of SOI and U via a systematic chemical substitution of the Ru4+(4d 4) ions for Ir4+(5d5) ions in BaIrO3, i.e., in high quality single crystals of BaIr1--x RuxO3(0.0 ≤ x ≤ 1.0). Our investigation of structural, magnetic, transport and thermal properties reveals that Ru substitution directly rebalances the competing energies so profoundly that it generates a rich phase diagram for BaIr 1--xRuxO 3 featuring two major effects: (1) Light Ru doping (0 ≤ x ≤ 0.15) prompts a simultaneous and precipitous drop in both the magnetic ordering temperature TC and the electrical resistivity, which exhibits metal-insulator transition at around TC. (2) Heavier Ru doping (0.41 ≤ x ≤ 0.82) induces a robust metallic and spin frustration state. For comparison and contrast, we also substituted Rh4+(4d 5) ions for Ir4+(5d5) ions in BaIrO3, i.e. in BaIr1--xRhxO 3(0.0 ≤ x ≤ 0.1), where Rh only reduces the SOI, but without altering the band filling. Hence, this system remains tuned at the Mott instability and is very susceptible to disorder scattering which gives rise to Anderson localization. KEYWORDS: spin-orbit interaction, heavy transition metal oxides

  5. Structural phase transition at the percolation threshold in epitaxial (La0.7Ca0.3MnO3)1-x:(MgO)x nanocomposite films.

    Science.gov (United States)

    Moshnyaga, V; Damaschke, B; Shapoval, O; Belenchuk, A; Faupel, J; Lebedev, O I; Verbeeck, J; van Tendeloo, G; Mücksch, M; Tsurkan, V; Tidecks, R; Samwer, K

    2003-04-01

    'Colossal magnetoresistance' in perovskite manganites such as La0.7Ca0.3MnO3 (LCMO), is caused by the interplay of ferro-paramagnetic, metal-insulator and structural phase transitions. Moreover, different electronic phases can coexist on a very fine scale resulting in percolative electron transport. Here we report on (LCMO)1-x:(MgO)x (0 strain. The largest colossal magnetoresistance of 10(5)% was observed at the percolation threshold in the conductivity at xc 0.3, which is coupled to a structural phase transition from orthorhombic (0 < x < or 0.1) to rhombohedral R3c structure (0.33 < or = x < or = 0.8). An increase of the Curie temperature for the Rc phase was observed. These results may provide a general method for controlling the magnetotransport properties of manganite-based composite films by appropriate choice of the second phase.

  6. Surface effects on magnetic Freedericksz transition in ferronematics with soft particle anchoring

    International Nuclear Information System (INIS)

    Bena, R.-E.; Petrescu, Emil

    2003-01-01

    The magnetic field-induced Freedericksz transition in a homeotropically aligned ferronematic (FN) in the case of weak anchoring molecules to the walls is studied. A correction to the Burylov-Raikher expression for the second-order transition threshold field is found. The possibility of a first-order transition is discussed in connection with the similar results for nematic liquid crystals. The saturation magnetic field is also obtained in terms of FN, surface and device parameters

  7. A dosemeter with a metal-insulator-semiconductor structure

    International Nuclear Information System (INIS)

    Digoy, J.-L.

    1973-01-01

    Description is given of a semiconducting device for measuring irradiation doses, this device being a Mosfet structure, field effect and insulated-gate device of revolution, with a cylindrical effective surface and ring-shaped source and drain. This can be applied to the measurement of doses up to 10 4 rads, for radiations of a few keV, in the field of in-vivo biology, in a flowing fluid [fr

  8. Field-induced Gap and Quantized Charge Pumping in Nano-helix

    Energy Technology Data Exchange (ETDEWEB)

    Qi, Xiao-Liang; /Stanford U., Phys. Dept. /Tsinghua U., Beijing; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

    2010-02-15

    We propose several novel physical phenomena based on nano-scale helical wires. Applying a static electric field transverse to the helical wire induces a metal to insulator transition, with the band gap determined by the applied voltage. Similar idea can be applied to 'geometrically' constructing one-dimensional systems with arbitrary external potential. With a quadrupolar electrode configuration, the electric field could rotate in the transverse plane, leading to a quantized dc charge current proportional to the frequency of the rotation. Such a device could be used as a new standard for the high precession measurement of the electric current. The inverse effect implies that passing an electric current through a helical wire in the presence of a transverse static electric field can lead to a mechanical rotation of the helix. This effect can be used to construct nano-scale electro-mechanical motors. Finally, our methodology also enables new ways of controlling and measuring the electronic properties of helical biological molecules such as the DNA.

  9. Magnetic field induced enhancement of resistance in polycrystalline ZrTe5

    Science.gov (United States)

    Behera, Prakash; Bera, Sumit; Patidar, Manju Mishra; Singh, Durgesh; Mishra, A. K.; Krishnan, M.; Gangrade, M.; Deshpande, U. P.; Venkatesh, R.; Ganesan, V.

    2018-04-01

    Transport properties of the polycrystalline ZrTe5 showing a considerable positive Magneto-Resistance (MR) in the intermediate temperatures has been reported. Substantial shift of peak temperature by approximately 65 K with an applied magnetic field of 13.5 Tesla has been observed. Magneto resistance of this polycrystalline sample (˜100%) is comparable with its single crystalline counterpart reported in literature. The peak intensity scales with peak temperature and obeys reasonably the Dionne relationship that is a clear indication of polaron mediated conduction in this system. Magneto Resistance (MR) in this system is attributed to the two carrier polaronic conduction model similar to the Holstein's approach. The results are further complemented with the Peak shift in magnetic field expected for a system having a fraction of localized carrier density. This observation places this famous thermoelectric material that displays a topological Dirac to Weyl transition in magnetic field in to the family of materials that have potential technological applications in the liquid nitrogen temperature range viz. 85-150 K.

  10. Electric field-induced valley degeneracy lifting in uniaxial strained graphene: Evidence from magnetophonon resonance

    Science.gov (United States)

    Assili, Mohamed; Haddad, Sonia; Kang, Woun

    2015-03-01

    A double peak structure in the magnetophonon resonance (MPR) spectrum of uniaxial strained graphene, under crossed electric and magnetic fields, is predicted. We focus on the Γ point optical phonon modes coupled to the inter-Landau level transitions 0 ⇆±1 where MPR is expected to be more pronounced at high magnetic field. We derive the frequency shifts and the broadenings of the longitudinal and transverse optical phonon modes taking into account the effect of the strain modified electronic spectrum on the electron-phonon coupling. We show that the MPR line for a given phonon mode acquires a double peak structure originating from the twofold valley degeneracy lifting. The latter is due to the different Landau level spacings in the two Dirac valleys resulting from the simultaneous action of the inplane electric field and the strain-induced Dirac cone tilt. We discuss the role of some key parameters such as disorder, strain, doping, and electric field amplitude on the emergence of the double peak structure.

  11. Field induced modification of defect complexes in magnesium-doped lithium niobate

    Energy Technology Data Exchange (ETDEWEB)

    Meyer, Nadège; Granzow, Torsten [Department of Materials Research and Technology, Luxembourg Institute of Science and Technology, 41 rue du Brill, L-4422 Belvaux (Luxembourg); Nataf, Guillaume F., E-mail: nataf@lippmann.lu [Department of Materials Research and Technology, Luxembourg Institute of Science and Technology, 41 rue du Brill, L-4422 Belvaux (Luxembourg); CEA, DSM/IRAMIS/SPEC, F-91191 Gif-sur-Yvette Cedex (France)

    2014-12-28

    Dielectric constant, thermally stimulated depolarization currents (TSDC), and conductivity of undoped and 5% Mg-doped LiNbO{sub 3} single crystals between −100 °C and 200 °C have been investigated. A Debye-like dielectric relaxation with an activation energy of 135 meV is observed in the Mg-doped material, but not in undoped crystals. On heating this relaxation disappears near 140 °C and does not reappear after cooling. Anomalies observed in TSDC around this temperature are attributed to the motion of lithium vacancies, in agreement with conductivity measurements. It is proposed that in thermal equilibrium the electrons from the Mg{sub Li}{sup •} donors are trapped in (4Mg{sub Li}{sup •}+4V{sub Li}{sup ′}) defect complexes. High-temperature poling breaks these defect complexes. The transition of the liberated electrons between the Mg{sub Li}{sup •} donor centers and the Nb{sub Nb} forming the conduction band gives rise to the observed dielectric relaxation.

  12. Electric-field-induced extremely large change in resistance in graphene ferromagnets

    Science.gov (United States)

    Song, Yu

    2018-01-01

    A colossal magnetoresistance (˜100×10^3% ) and an extremely large magnetoresistance (˜1×10^6% ) have been previously explored in manganite perovskites and Dirac materials, respectively. However, the requirement of an extremely strong magnetic field (and an extremely low temperature) makes them not applicable for realistic devices. In this work, we propose a device that can generate even larger changes in resistance in a zero-magnetic field and at a high temperature. The device is composed of graphene under two strips of yttrium iron garnet (YIG), where two gate voltages are applied to cancel the heavy charge doping in the YIG-induced half-metallic ferromagnets. By calculations using the Landauer-Büttiker formalism, we demonstrate that, when a proper gate voltage is applied on the free ferromagnet, changes in resistance up to 305×10^6% (16×10^3% ) can be achieved at the liquid helium (nitrogen) temperature and in a zero magnetic field. We attribute such a remarkable effect to a gate-induced full-polarization reversal in the free ferromagnet, which results in a metal-state to insulator-state transition in the device. We also find that the proposed effect can be realized in devices using other magnetic insulators, such as EuO and EuS. Our work should be helpful for developing a realistic switching device that is energy saving and CMOS-technology compatible.

  13. Absence of magnetic ordering and field-induced phase diagram in the gadolinium aluminum garnet

    Science.gov (United States)

    Florea, O.; Lhotel, E.; Jacobsen, H.; Knee, C. S.; Deen, P. P.

    2017-12-01

    The robustness of spin liquids with respect to small perturbations, and the way magnetic frustration can be lifted by slight changes in the balance between competing magnetic interactions, remains a rich and open issue. We address this question through the study of the gadolinium aluminum garnet Gd3Al5O12 , a related compound to the extensively studied Gd3Ga5O12 . We report on its magnetic properties at very low temperatures. We show that despite a freezing at about 300 mK, no magnetic transition is observed, suggesting the presence of a spin-liquid state down to the lowest temperatures, similarly to Gd3Ga5O12 , in spite of a larger ratio between exchange and dipolar interactions. Finally, the phase diagram as a function of field and temperature is strongly reminiscent of the one reported in Gd3Ga5O12 . This study reveals the robust nature of the spin-liquid phase for Gd ions on the garnet lattice, in stark contrast to Gd ions on the pyrochlore lattice for which a slight perturbation drives the compound into a range of magnetically ordered states.

  14. Terahertz probes of magnetic field induced spin reorientation in YFeO{sub 3} single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Xian; Jiang, Junjie; Ma, Guohong, E-mail: ghma@staff.shu.edu.cn [Department of Physics, Shanghai University, Shanghai 200444 (China); Jin, Zuanming [Department of Physics, Shanghai University, Shanghai 200444 (China); Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz (Germany); Wang, Dongyang; Tian, Zhen; Han, Jiaguang [Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering, Key Laboratory of Optoelectronics Information and Technology (Ministry of Education), Tianjin University, Tianjin 300072 (China); Cheng, Zhenxiang [Department of Physics, Shanghai University, Shanghai 200444 (China); Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong, New South Wales 2522 (Australia)

    2015-03-02

    Using the terahertz time-domain spectroscopy, we demonstrate the spin reorientation of a canted antiferromagnetic YFeO{sub 3} single crystal, by evaluating the temperature and magnetic field dependence of resonant frequency and amplitude for the quasi-ferromagnetic (FM) and quasi-antiferromagnetic modes (AFM), a deeper insight into the dynamics of spin reorientation in rare-earth orthoferrites is established. Due to the absence of 4f-electrons in Y ion, the spin reorientation of Fe sublattices can only be induced by the applied magnetic field, rather than temperature. In agreement with the theoretical predication, the frequency of FM mode decreases with magnetic field. In addition, an obvious step of spin reorientation phase transition occurs with a relatively large applied magnetic field of 4 T. By comparison with the family members of RFeO{sub 3} (R = Y{sup 3+} or rare-earth ions), our results suggest that the chosen of R would tailor the dynamical rotation properties of Fe ions, leading to the designable spin switching in the orthoferrite antiferromagnetic systems.

  15. Terahertz field-induced ionization and perturbed free induction decay of excitons in bulk GaAs

    Science.gov (United States)

    Murotani, Yuta; Takayama, Masayuki; Sekiguchi, Fumiya; Kim, Changsu; Akiyama, Hidefumi; Shimano, Ryo

    2018-03-01

    We investigated the interaction between an intense terahertz (THz) pulse and excitons in bulk GaAs by using THz pump near-infrared (NIR) optical probe spectroscopy. We observed a clear spectral oscillation in the NIR transient absorption spectra at low temperature, which is interpreted as the THz pump-induced perturbed free induction decay (PFID) of the excitonic interband polarization. We performed a numerical simulation based on a microscopic theory and identified that the observed PFID signal originates from the THz field-induced ionization of excitons. Using a real-space representation of the excitonic wave function, we visualized how the ionization of an exciton proceeds under the intense single-cycle THz electric field. We also calculated the nonlinear susceptibility with the lowest-order perturbation theory assuming a weak THz pump, which showed a similar spectral feature with that obtained by the full treatment to field-induced ionization process. This coincidence is attributed to the fact that 1s-excitonic interband polarization is modified predominantly through interactions with the p-wave component of the excitonic wave function. A simple phenomenological expression of the PFID signal is presented to discuss effects of the THz pump pulse duration on the spectral oscillation.

  16. Electric field-induced magnetoresistance in spin-valve/piezoelectric multiferroic laminates for low-power spintronics

    International Nuclear Information System (INIS)

    Huong Giang, D.T.; Thuc, V.N.; Duc, N.H.

    2012-01-01

    Electric field-induced magnetic anisotropy has been realized in the spin-valve-based {Ni 80 Fe 20 /Cu/Fe 50 Co 50 /IrMn}/piezoelectric multiferroic laminates. In this system, electric-field control of magnetization is accomplished by strain mediated magnetoelectric coupling. Practically, the magnetization in the magnetostrictive FeCo layer of the spin-valve structure rotates under an effective compressive stress caused by the inverse piezoelectric effect in external electrical fields. This phenomenon is evidenced by the magnetization and magnetoresistance changes under the electrical field applied across the piezoelectric layer. The result shows great potential for advanced low-power spintronic devices. - Highlights: ► Investigate electric field-induced magnetic anisotropy in spin-valve/piezoelectric. ► Magnetization, magnetoresistance changes under electric field across piezoelectric. ► Magnetization in magnetostrictive FeCo-layer rotates under a compressive stress. ► This advance shows great implications for low-power electronics and spintronics.

  17. Study of a recombination X-ray laser scheme in a H-like nitrogen plasma created by optical field induced ionization

    International Nuclear Information System (INIS)

    Hulin, S.

    2001-01-01

    Thanks to their high brightness and short wavelength, X ray lasers are interesting diagnostics in many experiments because they can efficiently probe dense plasmas. Furthermore their mono-chromaticity and collimation make them interesting tools in plasma physics but also in many biology or chemistry experiments. The effective use of this diagnostic is mainly depending on its dimensions and cost. For this reason, research on X ray laser is now focused on the reduction of cost and the realization of table-top facilities. One of these research axis, based on the optical field induced ionization (OFI) of the plasma, is presented in this work. An ultra-short (60 fs) high-brightness (10 19 W/cm 2 ) Ti:Sapphire (790 nm) laser is focused into a nitrogen pulsed gas jet. A dense (10 20 cm -3 ) plasma of fully stripped nitrogen is created by the way. During the fast recombination of the plasma some population inversions between levels of principal quantum number 2 and 1 (2.4 nm) and 3 and 2 (13.4 nm) can occur depending on the plasma parameters. The creation of the plasma by OFI, laser-plasma interaction dominated by relativistic self-focusing, and recombination dynamics are studied by numerical simulations on one hand and experiments on the other hand. Temperature measurements and numerical simulations show a strong heating, destructive for the laser scheme, which can be explained by Raman instability growing. Nevertheless plasma X ray emission in the 2-20 nm range show a strong increase with the electronic density of the 13.4 nm line intensity. This behavior is consistent with a laser effect but is not detected on the 2.4 nm transition line. (author)

  18. Phase transition study in strongly correlated VO{sub 2} based sensing systems

    Energy Technology Data Exchange (ETDEWEB)

    Simo, A., E-mail: alinesimo.aline@gmail.com [UNESCO-UNISA Africa Chair in Nanoscience’s/Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk ridge, P.O. Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure road, Somerset West 7129, P.O. Box 722, Somerset West, Western Cape Province (South Africa); Kaviyarasu, K. [UNESCO-UNISA Africa Chair in Nanoscience’s/Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk ridge, P.O. Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure road, Somerset West 7129, P.O. Box 722, Somerset West, Western Cape Province (South Africa); Mwakikunga, B. [Council for Scientific and Industrial Research, P.O. Box 395, Pretoria 0001 (South Africa); Madjoe, R. [Physics Department, University of Western Cape, 7535 Belville Cape Town (South Africa); Gibaud, A. [Laboratoire de Physique de l’Etat Condensé, Université du Maine Faculte des sciences, UPRESA 6087, 72085, Le Mans Cedex 9 (France); Maaza, M. [UNESCO-UNISA Africa Chair in Nanoscience’s/Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk ridge, P.O. Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure road, Somerset West 7129, P.O. Box 722, Somerset West, Western Cape Province (South Africa)

    2017-04-15

    Highlights: • At 230 °C for about 48 h to prepare successfully VO{sub 2} nanobelts. • 1D shows good sensing performance due to the large active surface of the material. • The good selectivity of methanol compared to acetone and isopropanol. • VOC compounds was observed at room temperature. - Abstract: Intermediate phase monoclinic M2 was observed by inducing in situ X-ray thermo diffraction on VO{sub 2} (M) nanoplatelets. The solid-solid phase transition occurs at around 65 °C assisted with the percolative transition metal-insulator. The existence of an intermediate crystalline phase with room temperature insulator phase and high temperature metallic phase across MIT in VO{sub 2} could be of relevance to understand structural contributions to the phase transition dynamics. In addition, pellet of VO{sub 2} nanostructures have shown to present good sensing properties to various alcohols vapors at room temperature and good selectivity of methanol with 5.54% sensitivity and limit detection below 5 ppm, compared to isopropanol 3.2% and acetone 2.4% respectively.

  19. Transitional Justice

    DEFF Research Database (Denmark)

    Gissel, Line Engbo

    This presentation builds on an earlier published article, 'Contemporary Transitional Justice: Normalising a Politics of Exception'. It argues that the field of transitional justice has undergone a shift in conceptualisation and hence practice. Transitional justice is presently understood to be th...... to be the provision of ordinary criminal justice in contexts of exceptional political transition.......This presentation builds on an earlier published article, 'Contemporary Transitional Justice: Normalising a Politics of Exception'. It argues that the field of transitional justice has undergone a shift in conceptualisation and hence practice. Transitional justice is presently understood...

  20. Quasi-continuous transition from a Fermi liquid to a spin liquid in κ-(ET)2Cu2(CN)3.

    Science.gov (United States)

    Furukawa, Tetsuya; Kobashi, Kazuhiko; Kurosaki, Yosuke; Miyagawa, Kazuya; Kanoda, Kazushi

    2018-01-22

    The Mott metal-insulator transition-a manifestation of Coulomb interactions among electrons-is known as a discontinuous transition. Recent theoretical studies, however, suggest that the transition is continuous if the Mott insulator carries a spin liquid with a spinon Fermi surface. Here, we demonstrate the case of a quasi-continuous Mott transition from a Fermi liquid to a spin liquid in an organic triangular-lattice system κ-(ET) 2 Cu 2 (CN) 3 . Transport experiments performed under fine pressure tuning have found that as the Mott transition is approached, the Fermi liquid coherence temperature continuously falls to the scale of kelvins, with a divergent quasi-particle decay rate on the metal side, and the charge gap continuously closes on the insulator side. A Clausius-Clapeyron analysis provides thermodynamic evidence for the extremely weak first-order nature of the transition. These results provide additional support for the existence of a spinon Fermi surface, which becomes an electron Fermi surface when charges are delocalized.

  1. 6% magnetic-field-induced strain by twin-boundary motion in ferromagnetic Ni-Mn-Ga

    International Nuclear Information System (INIS)

    Murray, S. J.; Marioni, M.; Allen, S. M.; O'Handley, R. C.; Lograsso, T. A.

    2000-01-01

    Field-induced strains of 6% are reported in ferromagnetic Ni-Mn-Ga martensites at room temperature. The strains are the result of twin boundary motion driven largely by the Zeeman energy difference across the twin boundary. The strain measured parallel to the applied magnetic field is negative in the sample/field geometry used here. The strain saturates in fields of order 400 kA/m and is blocked by a compressive stress of order 2 MPa applied orthogonal to the magnetic field. The strain versus field curves exhibit appreciable hysteresis associated with the motion of the twin boundaries. A simple model accounts quantitatively for the dependence of strain on magnetic field and external stress using as input parameters only measured quantities. (c) 2000 American Institute of Physics

  2. Using hydrocarbon as a carbon source for synthesis of carbon nanotube by electric field induced needle-pulsed plasma

    International Nuclear Information System (INIS)

    Kazemi Kia, Kaveh; Bonabi, Fahimeh

    2013-01-01

    In this work different hydrocarbons are used as the carbon source, in the production of carbon nanotubes (CNTs) and nano onions. An electric field induced needle pulse arc-discharge reactor is used. The influence of starting carbon on the synthesis of CNTs is investigated. The production efficiency is compared for Acetone, Isopropanol and Naphthalene as simple hydrocarbons. The hydrocarbons are preheated and then pretreated by electric field before being exposed to plasma. The hydrocarbon vapor is injected into plasma through a graphite spout in the cathode assembly. The pulsed plasma takes place between two graphite rods while a strong electric field has been already established alongside the electrodes. The pulse width is 0.3 μs. Mechanism of precursor decomposition is discussed by describing three forms of energy that are utilized to disintegrate the precursor molecules: thermal energy, electric field and kinetic energy of plasma. Molecular polarity of a hydrocarbon is one of the reasons for choosing carbon raw material as a precursor in an electric field induced low power pulsed-plasma. The results show that in order to obtain high quality carbon nanotubes, Acetone is preferred to Isopropanol and Naphthalene. Scanning probe microscopy techniques are used to investigate the products. - Highlights: • We synthesized CNTs (carbon nano tubes) by needle pulsed plasma. • We use different hydrocarbons as carbon source in the production of CNTs. • We investigated the influence of starting carbon on the synthesis of CNTs. • Thermal energy, electric field and kinetic energy are used to break carbon bonds. • Polar hydrocarbon molecules are more efficient than nonpolar ones in production

  3. Oral 2-hydroxyoleic acid inhibits reflex hypersensitivity and open-field-induced anxiety after spared nerve injury.

    Science.gov (United States)

    Avila-Martin, G; Galan-Arriero, I; Ferrer-Donato, A; Busquets, X; Gomez-Soriano, J; Escribá, P V; Taylor, J

    2015-01-01

    Recently, fatty acids have been shown to modulate sensory function in animal models of neuropathic pain. In this study, the antinociceptive effect of 2-hydroxyoleic acid (2-OHOA) was assessed following spared nerve injury (SNI) with reflex and cerebrally mediated behavioural responses. Initial antinociceptive behavioural screening of daily administration of 2-OHOA (400 mg/kg, p.o.) was assessed in Wistar rats by measuring hindlimb reflex hypersensitivity to von Frey and thermal plate stimulation up to 7 days after SNI, while its modulatory effect on lumbar spinal dorsal horn microglia reactivity was assessed with OX-42 immunohistochemistry. In vitro the effect of 2-OHOA (120 μM) on cyclooxygenase protein expression (COX-2/COX-1 ratio) in lipopolysaccharide-activated macrophage cells was tested with Western blot analysis. Finally, the effects of 2-OHOA treatment on the place escape aversion paradigm (PEAP) and the open-field-induced anxiety test were tested at 21 days following nerve injury compared with vehicle-treated sham and pregabalin-SNI (30 mg/kg, p.o.) control groups. Oral 2-OHOA significantly reduced ipsilateral mechanical and thermal hypersensitivity up to 7 days after SNI. Additionally 2-OHOA decreased the COX-2/COX-1 ratio in lipopolysaccharide-activated macrophage cells and OX-42 expression within the ipsilateral lumbar spinal dorsal horn 7 days after SNI. 2-OHOA significantly restored inner-zone exploration in the open-field test compared with the vehicle-treated sham group at 21 days after SNI. Oral administration of the modified omega 9 fatty acid, 2-OHOA, mediates antinociception and prevents open-field-induced anxiety in the SNI model in Wistar rats, which is mediated by an inhibition of spinal dorsal horn microglia activation. © 2014 European Pain Federation - EFIC®

  4. Supporting Transition

    Science.gov (United States)

    Qureshi, Asima; Petrucco, James

    2018-01-01

    Meadowbrook Primary School has explored the use of The Teacher Assessment in Primary Science (TAPS) to support transition, initially for transfer to secondary school and now for transition from Early Years Foundation Stage (EYFS) into Key Stage 1 (ages 5-7). This article will consider an example of a secondary transition project and discuss the…

  5. Colossal magnetoresistance manganites

    Indian Academy of Sciences (India)

    Keywords. Manganites; colossal magnetoresistance; strongly correlated electron systems; metal-insulator transitions and other electronic transitions; Jahn-Teller polarons and electron-phonon interaction.

  6. Transition conductivity study of high temperature superconductor compounds: the role of fluctuations; Etude de la transition resistive sur des composes supraconducteurs a haute temperature critique le role des fluctuations

    Energy Technology Data Exchange (ETDEWEB)

    Pagnon, V

    1991-04-01

    This memory subject is the transition conductivity study of high temperature superconductors in corelation with their anisotropy. Systematic conductivity measurements were made on YBaCuO and BaSrCaCuO in relation with temperature from 4.2 K to 1200 K, and with a magnetic field up to 8 T in several directions. Oxygen order has an effect on the characteristics at YBaCuO transition conductivity. The activation energy for oxygen absorption is about 0.5eV. One method of analysis of the conductivity fluctuations about the transition temperature is proposed. Two separate rates are noticeable in YBaCuO compound. The 3 D fluctuations rate in the immediate neighbourghood of the transition lets place to the 2 D fluctuations rate at high temperature. Transitions temperatures governing each rate are different, that`s incompatible with the formula proposed by Lawrence and Doniach. On the other hand, the analogy with quasi-2 D magnetic systems seems more relevant. A magnetic field application or a lowering of oxygen concentration removes the 3 D fluctuations rate. Non ohmic effects observed at the transition conductivity foot are analysis as a non-linear 2 D excitation manifestation of the supraconductive phase. Finally, by measurements on strontium doped YBaCuO crystals, we confirm a metal-insulator transition along the C-Axe when oxygen concentration reduces. This is connected with the specific heat jump. All these results uplighten the fundamental bidimensional character of high transition temperature superconductivity.

  7. Single crystal growth and structural evolution across the 1st order valence transition in (Pr1-yYy)1-xCaxCoO3-δ

    Science.gov (United States)

    Schreiber, N. J.; Zhang, Junjie; Zheng, Hong; Freeland, J. W.; Chen, Yu-Sheng; Mitchell, J. F.; Phelan, D.

    2017-10-01

    Praseodymium-containing cobalt perovskites, such as (Pr1-yYy)1-xCaxCoO3-δ, have been argued to undergo a first-order charge shift between Pr and hybridized Co-O orbitals that leads to a metal-insulator transition at a temperature, TVT. Magnetization and x-ray absorption spectroscopy measurements on single crystals of (Pr0.85Y0.15)0.7Ca0.3CoO3-δ grown in an IR image furnace under 40-60 bar of oxygen confirm the presence of this valence transition. Single crystal x-ray synchrotron diffraction measurements are consistent with an isomorphic phase transition at TVT. No evidence of charge ordering was revealed by the single crystal diffraction. Dissimilar to analytical transmission electron microscopy measurements performed on a grain from a polycrystalline sample that revealed an oxygen vacancy order-disorder transition at TVT, the present single-crystal measurements did not evidence such a transition, likely reflecting a lower density of oxygen vacancies in the high-pO2 grown single crystals.

  8. Possible observation of the Berezinskii-Kosterlitz-Thouless transition in boron-doped diamond films

    Science.gov (United States)

    Coleman, Christopher; Bhattacharyya, Somnath

    2017-11-01

    The occurrence of the Berezinskii-Kosterlitz-Thouless (BKT) transition is investigated in heavily boron-doped nanocrystalline diamond films through a combination of current-voltage and resistance measurements. We observe transport features suggesting a robust BKT transition along with transport features related to vortex pinning in nanocrystalline diamond films with smaller grain size. The vortex core energy determined through analysis of the resistance temperature curves was found to be anti-correlated to the BKT transition temperatures. It is also observed that the higher BKT temperature is related to an increased vortex-antivortex binding energy derived from the activated transport regions. Further, the magnetic field induced superconductor insulator transition shows the possibility of the charge glass state. The consequences of granularity such as localization and vortex pinning can lead to tuneable BKT temperatures and strongly affects the field induced insulating state.

  9. Electric field-induced phase transitions and composition-driven nanodomains in rhombohedral-tetragonal potassium-sodium niobate-based ceramics

    KAUST Repository

    Lv, Xiang; Wu, Jiagang; Xiao, Dingquan; Zhu, Jianguo; Zhang, Xixiang

    2017-01-01

    -T) phase boundary, confirmed using several advanced techniques, allowed a large piezoelectric constant (d33) of 450 ± 5 pC/N to be obtained in (1-x)K0.4Na0.6Nb0.945Sb0.055O3-xBi0.5Na0.5(Hf1-ySny)O3 (0 ≤ x ≤ 0.06 and 0 ≤ y ≤ 0.5) ceramics possessing

  10. Magnetic-Field-Induced Soft-Mode Quantum Phase Transition in the High-Temperature Superconductor La1.855Sr0.145CuO4

    DEFF Research Database (Denmark)

    Chang, J.; Christensen, Niels Bech; Niedermayer, C.

    2009-01-01

    Inelastic neutron-scattering experiments on the high-temperature superconductor La1.855Sr0.145CuO4 reveal a magnetic excitation gap Delta that decreases continuously upon application of a magnetic field perpendicular to the CuO2 planes. The gap vanishes at the critical field required to induce long...

  11. Theory of singlet-ground-state magnetism. Application to field-induced transitions in CsFeCl3 and CsFeBr3

    DEFF Research Database (Denmark)

    Lindgård, P.-A.; Schmid, B.

    1993-01-01

    In the singlet ground-state systems CsFeCl3 and CsFeBr3 a large single-ion anisotropy causes a singlet ground state and a doubly degenerate doublet as the first excited states of the Fe2+ ion. In addition the magneteic interaction is anisotropic being much larger along the z axis than perpendicular...... to it. Therefore, these quasi-one-dimensional magnetic model systems are ideal to demonstrate unique correlation effects. Within the framework of the correlation theory we derive the expressions for the excitation spectrum. When a magnetic field is applied parallel to the z axis both substances have...

  12. Uncertainties in the estimation of specific absorption rate during radiofrequency alternating magnetic field induced non-adiabatic heating of ferrofluids

    Science.gov (United States)

    Lahiri, B. B.; Ranoo, Surojit; Philip, John

    2017-11-01

    Magnetic fluid hyperthermia (MFH) is becoming a viable cancer treatment methodology where the alternating magnetic field induced heating of magnetic fluid is utilized for ablating the cancerous cells or making them more susceptible to the conventional treatments. The heating efficiency in MFH is quantified in terms of specific absorption rate (SAR), which is defined as the heating power generated per unit mass. In majority of the experimental studies, SAR is evaluated from the temperature rise curves, obtained under non-adiabatic experimental conditions, which is prone to various thermodynamic uncertainties. A proper understanding of the experimental uncertainties and its remedies is a prerequisite for obtaining accurate and reproducible SAR. Here, we study the thermodynamic uncertainties associated with peripheral heating, delayed heating, heat loss from the sample and spatial variation in the temperature profile within the sample. Using first order approximations, an adiabatic reconstruction protocol for the measured temperature rise curves is developed for SAR estimation, which is found to be in good agreement with those obtained from the computationally intense slope corrected method. Our experimental findings clearly show that the peripheral and delayed heating are due to radiation heat transfer from the heating coils and slower response time of the sensor, respectively. Our results suggest that the peripheral heating is linearly proportional to the sample area to volume ratio and coil temperature. It is also observed that peripheral heating decreases in presence of a non-magnetic insulating shielding. The delayed heating is found to contribute up to ~25% uncertainties in SAR values. As the SAR values are very sensitive to the initial slope determination method, explicit mention of the range of linear regression analysis is appropriate to reproduce the results. The effect of sample volume to area ratio on linear heat loss rate is systematically studied and the

  13. Uncertainties in the estimation of specific absorption rate during radiofrequency alternating magnetic field induced non-adiabatic heating of ferrofluids

    International Nuclear Information System (INIS)

    Lahiri, B B; Ranoo, Surojit; Philip, John

    2017-01-01

    Magnetic fluid hyperthermia (MFH) is becoming a viable cancer treatment methodology where the alternating magnetic field induced heating of magnetic fluid is utilized for ablating the cancerous cells or making them more susceptible to the conventional treatments. The heating efficiency in MFH is quantified in terms of specific absorption rate (SAR), which is defined as the heating power generated per unit mass. In majority of the experimental studies, SAR is evaluated from the temperature rise curves, obtained under non-adiabatic experimental conditions, which is prone to various thermodynamic uncertainties. A proper understanding of the experimental uncertainties and its remedies is a prerequisite for obtaining accurate and reproducible SAR. Here, we study the thermodynamic uncertainties associated with peripheral heating, delayed heating, heat loss from the sample and spatial variation in the temperature profile within the sample. Using first order approximations, an adiabatic reconstruction protocol for the measured temperature rise curves is developed for SAR estimation, which is found to be in good agreement with those obtained from the computationally intense slope corrected method. Our experimental findings clearly show that the peripheral and delayed heating are due to radiation heat transfer from the heating coils and slower response time of the sensor, respectively. Our results suggest that the peripheral heating is linearly proportional to the sample area to volume ratio and coil temperature. It is also observed that peripheral heating decreases in presence of a non-magnetic insulating shielding. The delayed heating is found to contribute up to ∼25% uncertainties in SAR values. As the SAR values are very sensitive to the initial slope determination method, explicit mention of the range of linear regression analysis is appropriate to reproduce the results. The effect of sample volume to area ratio on linear heat loss rate is systematically studied and

  14. Transition radiation and transition scattering

    International Nuclear Information System (INIS)

    Ginzburg, V.L.

    1982-01-01

    Transition radiation is a process of a rather general character. It occurs when some source, which does not have a proper frequency (for example, a charge) moves at a constant velocity in an inhomogeneous and (or) nonstationary medium or near such a medium. The simplest type of transition radiation takes place when a charge crosses a boundary between two media (the role of one of the media may be played by vacuum). In the case of periodic variation of the medium, transition radiation possesses some specific features (resonance transition radiation or transition scattering). Transition scattering occurs, in particular, when a permittivity wave falls onto an nonmoving (fixed) charge. Transition scattering is closely connected with transition bremsstrahlung radiation. All these transition processes are essential for plasma physics. Transition radiation and transition scattering have analogues outside the framework of electrodynamics (like in the case of Vavilov-Cherenkov radiation). In the present report the corresponding range of phenomena is elucidated, as far as possible, in a generally physical aspect. (Auth.)

  15. Second Law Violation By Magneto-Caloric Effect Adiabatic Phase Transition of Type I Superconductive Particles

    OpenAIRE

    Keefe, Peter

    2004-01-01

    Abstract: The nature of the thermodynamic behavior of Type I superconductor particles, having a cross section less than the Ginzburg-Landau temperature dependent coherence length is discussed for magnetic field induced adiabatic phase transitions from the superconductive state to the normal state. Argument is advanced supporting the view that when the adiabatic magneto-caloric process is applied to particles, the phase transition is characterized by a decrease in entropy in violation of tradi...

  16. Filling- and interaction-driven Mott transition. Quantum cluster calculations within self-energy-functional theory; Fuellungs- und wechselwirkungsabhaengiger Mott-Uebergang. Quanten-Cluster-Rechnungen im Rahmen der Selbstenergiefunktional-Theorie

    Energy Technology Data Exchange (ETDEWEB)

    Balzer, Matthias

    2008-07-01

    The central goal of this thesis is the examination of strongly correlated electron systems on the basis of the two-dimensional Hubbard model. We analyze how the properties of the Mott insulator change upon doping and with interaction strength. The numerical evaluation is done using quantum cluster approximations, which allow for a thermodynamically consistent description of the ground state properties. The framework of self-energy-functional theory offers great flexibility for the construction of cluster approximations. A detailed analysis sheds light on the quality and the convergence properties of different cluster approximations within the self-energy-functional theory. We use the one-dimensional Hubbard model for these examinations and compare our results with the exact solution. In two dimensions the ground state of the particle-hole symmetric model at half-filling is an antiferromagnetic insulator, independent of the interaction strength. The inclusion of short-range spatial correlations by our cluster approach leads to a considerable improvement of the antiferromagnetic order parameter as compared to dynamical mean-field theory. In the paramagnetic phase we furthermore observe a metal-insulator transition as a function of the interaction strength, which qualitatively differs from the pure mean-field scenario. Starting from the antiferromagnetic Mott insulator a filling-controlled metal-insulator transition in a paramagnetic metallic phase can be observed. Depending on the cluster approximation used an antiferromagnetic metallic phase may occur at first. In addition to long-range antiferromagnetic order, we also considered superconductivity in our calculations. The superconducting order parameter as a function of doping is in good agreement with other numerical methods, as well as with experimental results. (orig.)

  17. Magnetic-field-induced martensitic transformation of off-stoichiometric single-crystal Ni2MnGa

    International Nuclear Information System (INIS)

    Inoue, Kazuko; Yamaguchi, Yasuo; Shishido, Toetsu; Ishii, Yoshinobu; Yamauchi, Hiroki

    2009-01-01

    The effect of a magnetic field on the martensitic transformation of an off-stoichiometric Heusler type Ni 2.16 Mn 0.78 Ga 1.06 single crystal has been revealed by neutron diffraction. The alloy undergoes a martensitic transformation at room temperature, which is nearly coincident with its Curie temperature. Splitting of the cubic (020) peak on the reciprocal lattice cubic c * -plane was traced at 293 K by a triple-axis neutron spectrometer under an increasing magnetic field of up to 10 T. It was found that the magnetic field causes the martensitic transformation from the cubic structure to the orthorhombic structure, which is the same as that caused by decreasing the temperature without a magnetic field. The increase in the magnetic field to 10 T appears to correspond to a decrease in temperature of nearly 12 K, i.e., from 293 to 281 K. The present experiment suggests the possibility of realizing a magnetic-field-induced shape memory alloy. (author)

  18. In situ transmission electron microscopy study of the microstructural origins for the electric field-induced phenomena in ferroelectric perovskites

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Hanzheng [Iowa State Univ., Ames, IA (United States)

    2014-12-15

    Ferroelectrics are important materials due to their extensive technological applications, such as non-volatile memories, field-effect transistors, ferroelectric tunneling junctions, dielectric capacitors, piezoelectric transducers, sensors and actuators. As is well known, the outstanding dielectric, piezoelectric, and ferroelectric properties of these functional oxides originate from their ferroelectric domain arrangements and the corresponding evolution under external stimuli (e.g. electric field, stress, and temperature). Electric field has been known as the most efficient stimulus to manipulate the ferroelectric domains through polarization switching and alignment. Therefore, direct observation of the dynamic process of electric field-induced domain evolution and crystal structure transformation is of significant importance to understand the microstructural mechanisms for the functional properties of ferroelectrics. In this dissertation, electric field in situ transmission electron microscopy (TEM) technique was employed to monitor the real-time evolution of the domain morphology and crystal structure during various electrical processes: (1) the initial poling process, (2) the electric field reversal process, and (3) the electrical cycling process. Two types of perovskite-structured ceramics, normal ferroelectrics and relaxor ferroelectrics, were used for this investigation. In addition to providing the microscopic insight for some wellaccepted phase transformation rules, discoveries of some new or even unexpected physical phenomena were also demonstrated.

  19. Shear- and magnetic-field-induced ordering in magnetic nanoparticle dispersion from small-angle neutron scattering

    International Nuclear Information System (INIS)

    Krishnamurthy, V.V.; Bhandar, A.S.; Piao, M.; Zoto, I.; Lane, A.M.; Nikles, D.E.; Wiest, J.M.; Mankey, G.J.; Porcar, L.; Glinka, C.J.

    2003-01-01

    Small-angle neutron scattering experiments have been performed to investigate orientational ordering of a dispersion of rod-shaped ferromagnetic nanoparticles under the influence of shear flow and static magnetic field. In this experiment, the flow and flow gradient directions are perpendicular to the direction of the applied magnetic field. The scattering intensity is isotropic in zero-shear-rate or zero-applied-field conditions, indicating that the particles are randomly oriented. Anisotropic scattering is observed both in a shear flow and in a static magnetic field, showing that both flow and field induce orientational order in the dispersion. The anisotropy increases with the increase of field and with the increase of shear rate. Three states of order have been observed with the application of both shear flow and magnetic field. At low shear rates, the particles are aligned in the field direction. When increasing shear rate is applied, the particles revert to random orientations at a characteristic shear rate that depends on the strength of the applied magnetic field. Above the characteristic shear rate, the particles align along the flow direction. The experimental results agree qualitatively with the predictions of a mean field model

  20. Magnetic field induced suppression of the forward bias current in Bi2Se3/Si Schottky barrier diodes

    Science.gov (United States)

    Jin, Haoming; Hebard, Arthur

    Schottky diodes formed by van der Waals bonding between freshly cleaved flakes of the topological insulator Bi2Se3 and doped silicon substrates show electrical characteristics in good agreement with thermionic emission theory. The motivation is to use magnetic fields to modulate the conductance of the topologically protected conducting surface state. This surface state in close proximity to the semiconductor surface may play an important role in determining the nature of the Schottky barrier. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics were obtained for temperatures in the range 50-300 K and magnetic fields, both perpendicular and parallel to the interface, as high as 7 T. The I-V curve shows more than 6 decades linearity on semi-logarithmic plots, allowing extraction of parameters such as ideality (η), zero-voltage Schottky barrier height (SBH), and series resistance (Rs). In forward bias we observe a field-induced decrease in current which becomes increasingly more pronounced at higher voltages and lower temperature, and is found to be correlated with changes in Rs rather than other barrier parameters. A comparison of changes in Rs in both field direction will be made with magnetoresistance in Bi2Se3 transport measurement. The work is supported by NSF through DMR 1305783.

  1. Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification

    Energy Technology Data Exchange (ETDEWEB)

    Smets, Quentin, E-mail: quentin.smets@imec.be; Verreck, Devin; Heyns, Marc M. [Imec, Kapeldreef 75, 3001 Heverlee (Belgium); KULeuven, 3000 Leuven (Belgium); Verhulst, Anne S.; Martens, Koen; Lin, Han Chung; Kazzi, Salim El; Simoen, Eddy; Collaert, Nadine; Thean, Aaron [Imec, Kapeldreef 75, 3001 Heverlee (Belgium); Raskin, Jean-Pierre [ICTEAM, Université catholique de Louvain, 1348 Louvain-la-Neuve (Belgium)

    2014-11-17

    The Tunneling Field-Effect Transistor (TFET) is a promising device for future low-power logic. Its performance is often predicted using semiclassical simulations, but there is usually a large discrepancy with experimental results. An important reason is that Field-Induced Quantum Confinement (FIQC) is neglected. Quantum mechanical simulations show FIQC delays the onset of Band-To-Band Tunneling (BTBT) with hundreds of millivolts in the promising line-TFET configuration. In this letter, we provide experimental verification of this delayed onset. We accomplish this by developing a method where line-TFET are modeled using highly doped MOS capacitors (MOS-CAP). Using capacitance-voltage measurements, we demonstrate AC inversion by BTBT, which was so far unobserved in MOS-CAP. Good agreement is shown between the experimentally obtained BTBT onset and quantum mechanical predictions, proving the need to include FIQC in all TFET simulations. Finally, we show that highly doped MOS-CAP is promising for characterization of traps deep into the conduction band.

  2. Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification

    International Nuclear Information System (INIS)

    Smets, Quentin; Verreck, Devin; Heyns, Marc M.; Verhulst, Anne S.; Martens, Koen; Lin, Han Chung; Kazzi, Salim El; Simoen, Eddy; Collaert, Nadine; Thean, Aaron; Raskin, Jean-Pierre

    2014-01-01

    The Tunneling Field-Effect Transistor (TFET) is a promising device for future low-power logic. Its performance is often predicted using semiclassical simulations, but there is usually a large discrepancy with experimental results. An important reason is that Field-Induced Quantum Confinement (FIQC) is neglected. Quantum mechanical simulations show FIQC delays the onset of Band-To-Band Tunneling (BTBT) with hundreds of millivolts in the promising line-TFET configuration. In this letter, we provide experimental verification of this delayed onset. We accomplish this by developing a method where line-TFET are modeled using highly doped MOS capacitors (MOS-CAP). Using capacitance-voltage measurements, we demonstrate AC inversion by BTBT, which was so far unobserved in MOS-CAP. Good agreement is shown between the experimentally obtained BTBT onset and quantum mechanical predictions, proving the need to include FIQC in all TFET simulations. Finally, we show that highly doped MOS-CAP is promising for characterization of traps deep into the conduction band

  3. The demonstration of nonlinear analytic model for the strain field induced by thermal copper filled TSVs (through silicon via

    Directory of Open Access Journals (Sweden)

    M. H. Liao

    2013-08-01

    Full Text Available The thermo-elastic strain is induced by through silicon vias (TSV due to the difference of thermal expansion coefficients between the copper (∼18 ppm/ °C and silicon (∼2.8 ppm/ °C when the structure is exposed to a thermal ramp budget in the three dimensional integrated circuit (3DIC process. These thermal expansion stresses are high enough to introduce the delamination on the interfaces between the copper, silicon, and isolated dielectric. A compact analytic model for the strain field induced by different layouts of thermal copper filled TSVs with the linear superposition principle is found to have large errors due to the strong stress interaction between TSVs. In this work, a nonlinear stress analytic model with different TSV layouts is demonstrated by the finite element method and the analysis of the Mohr's circle. The characteristics of stress are also measured by the atomic force microscope-raman technique with nanometer level space resolution. The change of the electron mobility with the consideration of this nonlinear stress model for the strong interactions between TSVs is ∼2–6% smaller in comparison with those from the consideration of the linear stress superposition principle only.

  4. Current bistability in a weakly coupled multi-quantum well structure: a magnetic field induced 'memory effect'

    International Nuclear Information System (INIS)

    Feu, W H M; Villas-Boas, J M; Cury, L A; Guimaraes, P S S; Vieira, G S; Tanaka, R Y; Passaro, A; Pires, M P; Landi, S M; Souza, P L

    2009-01-01

    A study of magnetotunnelling in weakly coupled multi-quantum wells reveals a new phenomenon which constitutes a kind of memory effect in the sense that the electrical resistance of the sample after application of the magnetic field is different from before and contains the information that a magnetic field was applied previously. The change in the electric field domain configuration triggered by the magnetic field was compared for two samples, one strictly periodic and another with a thicker quantum well inserted into the periodic structure. For applied biases at which two electric field domains are present in the sample, as the magnetic field is increased a succession of discontinuous reductions in the electrical resistance is observed due to the magnetic field-induced rearrangement of the electric field domains, i.e. the domain boundary jumps from well to well as the magnetic field is changed. The memory effect is revealed for the aperiodic structure as the electric field domain configuration triggered by the magnetic field remains stable after the field is reduced back to zero. This effect is related to the multi-stability in the current-voltage characteristics observed in some weakly coupled multi-quantum well structures.

  5. Electric-field-induced internal deformation in piezoelectric BiB{sub 3}O{sub 6} crystals

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, O.; Gorfman, S.; Pietsch, U. [Solid State Physics Department, University of Siegen (Germany)

    2008-11-15

    For the first time electric-field-induced atomic displacements (internal strains) in non-ferroelectric polar BiB{sub 3}O{sub 6} single crystal plates (point symmetry 2) were investigated using X-ray diffraction technique. The intensity variations of selected Bragg reflections were collected for three different orientations of the applied external electric field vector with respect to the crystal lattice and used for calculating the microscopic structural response of BiB{sub 3}O{sub 6}. Due to the limited number of the reflections providing measurable changes in Bragg intensities we restricted ourselves in analyzing the shift of the B{sub 3}O{sub 6} sublattice relative to the Bi one. In addition, we considered the deformation of the Bi-O, B(1)-O and B(2)-O bond lengths and identified the [B(2)O{sub 3}] group as the most sensitive structural unit to an external electric perturbation. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Electric field measurements in a near atmospheric pressure nanosecond pulse discharge with picosecond electric field induced second harmonic generation

    Science.gov (United States)

    Goldberg, Benjamin M.; Chng, Tat Loon; Dogariu, Arthur; Miles, Richard B.

    2018-02-01

    We present an optical electric field measurement method for use in high pressure plasma discharges. The method is based upon the field induced second harmonic generation technique and can be used for localized electric field measurements with sub-nanosecond resolution in any gaseous species. When an external electric field is present, a dipole is induced in the typically centrosymmetric medium, allowing for second harmonic generation with signal intensities which scale by the square of the electric field. Calibrations have been carried out in 100 Torr room air, and a minimum sensitivity of 450 V/cm is demonstrated. Measurements were performed with nanosecond or faster temporal resolution in a 100 Torr room air environment both with and without a plasma present. It was shown that with no plasma present, the field follows the applied voltage to gap ratio, as measured using the back current shunt method. When the electric field is strong enough to exceed the breakdown threshold, the measured field was shown to exceed the anticipated voltage to gap ratio which is taken as an indication of the ionization wave front as it sweeps through the plasma volume.

  7. Study of interface layer effect in organic solar cells by electric-field-induced optical second-harmonic generation measurement

    Energy Technology Data Exchange (ETDEWEB)

    Taguchi, Dai; Sumiyoshi, Ryota; Chen, Xiangyu; Manaka, Takaaki; Iwamoto, Mitsumasa, E-mail: iwamoto@pe.titech.ac.jp

    2014-03-03

    By using electric-field-induced optical second-harmonic generation (EFISHG) measurement, we studied the effect of the use of bathocuproine (BCP) interface layer. The EFISHG measurements of indium–zinc–oxide (IZO)/C{sub 60}/Al diodes showed that the BCP layer inserted between C{sub 60} and Al formed an electrostatic field |E{sub i}| = 2.5 × 10{sup 4} V/cm in the C{sub 60} layer, pointing in a direction from the Al to the IZO. Accordingly, in the IZO/pentacene/C{sub 60}/BCP/Al organic solar cells (OSCs), holes (electrons) move to the IZO (Al) electrode, enhancing the short-circuit current. The EFISHG measurement is capable of directly probing internal fields in the layers used for OSCs, and is helpful for studying the contribution of the interface layer in OSCs. - Highlights: • Internal field in organic solar cells (OSCs) were directly probed. • Interface layer formed internal electric field, enhancing the OSC performance. • Maxwell–Wagner effect accounts for the internal electric field formation.

  8. Magnetic field-induced cluster formation and variation of magneto-optical signals in zinc-substituted ferrofluids

    Energy Technology Data Exchange (ETDEWEB)

    Nair, S.S. [Department of Physics, Cochin University of Science and Technology, Cochin 682 022 (India)]. E-mail: swapna@cusat.ac.in; Rajesh, S. [Department of Physics, Cochin University of Science and Technology, Cochin 682 022 (India); Abraham, V.S. [School of Engineering and Sciences, International University of Bremen, 28759 (Germany); Anantharaman, M.R. [Department of Physics, Cochin University of Science and Technology, Cochin 682 022 (India)]. E-mail: mraiyer@yahoo.com; Nampoori, V.P.N. [International School of Photonics, Cochin University of Science and Technology, Cochin-22 (India)

    2006-10-15

    Fine magnetic particles (size{approx_equal}100 A) belonging to the series Zn {sub x} Fe{sub 1-} {sub x} Fe{sub 2}O{sub 4} were synthesized by cold co-precipitation methods and their structural properties were evaluated using X-ray diffraction. Magnetization studies have been carried out using vibrating sample magnetometry (VSM) showing near-zero loss loop characteristics. Ferrofluids were then prepared employing these fine magnetic powders using oleic acid as surfactant and kerosene as carrier liquid by modifying the usually reported synthesis technique in order to induce anisotropy and enhance the magneto-optical signals. Liquid thin films of these fluids were prepared and field-induced laser transmission through these films was studied. The transmitted light intensity decreases at the centre with applied magnetic field in a linear fashion when subjected to low magnetic fields and saturate at higher fields. This is in accordance with the saturation in cluster formation. The pattern exhibited by these films in the presence of different magnetic fields was observed with the help of a CCD camera and was recorded photographically.

  9. Magnetic phase transitions in Er7Rh3 studied on single crystals

    International Nuclear Information System (INIS)

    Tsutaoka, Takanori; Obata, Keisuke; Cheyvuth, Seng; Koyama, Keiichi

    2014-01-01

    Highlights: • Magnetic and electrical properties of Er 7 Rh 3 were studied on single crystals. • The magnetic phase diagram along the c-axis was constructed. • The field-induced magnetic transitions in Er 7 Rh 3 can be explained by the magnetic structure with two magnetic propagation vectors. • The anomalies of electrical resistivity can also be described by the magnetic structure in Er 7 Rh 3 . - Abstract: Magnetic phase transitions in Er 7 Rh 3 with the Th 7 Fe 3 type hexagonal structure have been studied on single crystals by measuring magnetization, magnetic susceptibility and electrical resistivity. Er 7 Rh 3 possesses antiferromagnetic state below T N = 13 K. In the ordered state, the two successive magnetic transitions at T t1 = 6.2 K and T t2 = 4.5 K were observed. Several field-induced magnetic transitions were also observed along the a- and c-axes below T N ; magnetic field H – temperature T phase diagram along the c-axis was constructed. The field-induced magnetic transitions in Er 7 Rh 3 can be explained by the magnetic structure with two magnetic propagation vectors which were derived by the previous neutron diffraction studies. Electrical resistivity shows humps just below the magnetic transition temperatures, T N and T t1 due to the super-zone gap formation at the Fermi level; these anomalies can also be described by the magnetic structure changes in Er 7 Rh 3

  10. Phase transitions

    CERN Document Server

    Sole, Ricard V; Solé, Ricard V; Solé, Ricard V; Sol, Ricard V; Solé, Ricard V

    2011-01-01

    Phase transitions--changes between different states of organization in a complex system--have long helped to explain physics concepts, such as why water freezes into a solid or boils to become a gas. How might phase transitions shed light on important problems in biological and ecological complex systems? Exploring the origins and implications of sudden changes in nature and society, Phase Transitions examines different dynamical behaviors in a broad range of complex systems. Using a compelling set of examples, from gene networks and ant colonies to human language and the degradation of diverse ecosystems, the book illustrates the power of simple models to reveal how phase transitions occur. Introductory chapters provide the critical concepts and the simplest mathematical techniques required to study phase transitions. In a series of example-driven chapters, Ricard Solé shows how such concepts and techniques can be applied to the analysis and prediction of complex system behavior, including the origins of ...

  11. Signatures of field induced spin polarization of neutron star matter in seismic vibrations of paramagnetic neutron star

    International Nuclear Information System (INIS)

    Bastrukov, S I; Yang, J; Podgainy, D V; Weber, F

    2003-01-01

    A macroscopic model of the dissipative magneto-elastic dynamics of viscous spin polarized nuclear matter is discussed in the context of seismic activity of a paramagnetic neutron star. The source of the magnetic field of such a star is attributed to Pauli paramagnetism of baryon matter promoted by a seed magnetic field frozen into the star in the process of gravitational collapse of a massive progenitor. Particular attention is given to the effect of shear viscosity of incompressible stellar material on the timing of non-radial torsional magneto-elastic pulsations of the star triggered by starquakes. By accentuating the fact that this kind of vibration is unique to the seismology of a paramagnetic neutron star we show that the high-frequency modes decay faster than the low-frequency modes. The obtained analytic expressions for the period and relaxation time of this mode, in which the magnetic susceptibility and viscosity enter as input parameters, are then quantified by numerical estimates for these parameters taken from early and current works on transport coefficients of dense matter. It is found that the effect of viscosity is crucial for the lifetime of magneto-torsion vibrations but it does not appreciably affect the periods of this seismic mode which fall in the realm of periods of pulsed emission of soft gamma-ray repeaters and anomalous x-ray pulsars - young super-magnetized neutron stars, radiating, according to the magnetar model, at the expense of the magnetic energy release. Finally, we present arguments that the long periodic pulsed emission of these stars in a quiescent regime of radiation can be interpreted as a manifestation of weakly damped seismic magneto-torsion vibrations exhibiting the field induced spin polarization of baryon matter

  12. Phase transition transistors based on strongly-correlated materials

    Science.gov (United States)

    Nakano, Masaki

    2013-03-01

    The field-effect transistor (FET) provides electrical switching functions through linear control of the number of charges at a channel surface by external voltage. Controlling electronic phases of condensed matters in a FET geometry has long been a central issue of physical science. In particular, FET based on a strongly correlated material, namely ``Mott transistor,'' has attracted considerable interest, because it potentially provides gigantic and diverse electronic responses due to a strong interplay between charge, spin, orbital and lattice. We have investigated electric-field effects on such materials aiming at novel physical phenomena and electronic functions originating from strong correlation effects. Here we demonstrate electrical switching of bulk state of matter over the first-order metal-insulator transition. We fabricated FETs based on VO2 with use of a recently developed electric-double-layer transistor technique, and found that the electrostatically induced carriers at a channel surface drive all preexisting localized carriers of 1022 cm-3 even inside a bulk to motion, leading to bulk carrier delocalization beyond the electrostatic screening length. This non-local switching of bulk phases is achieved with just around 1 V, and moreover, a novel non-volatile memory like character emerges in a voltage-sweep measurement. These observations are apparently distinct from those of conventional FETs based on band insulators, capturing the essential feature of collective interactions in strongly correlated materials. This work was done in collaboration with K. Shibuya, D. Okuyama, T. Hatano, S. Ono, M. Kawasaki, Y. Iwasa, and Y. Tokura. This work was supported by the Japan Society for the Promotion of Science (JSAP) through its ``Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program).''

  13. Fermion condensation quantum phase transition versus conventional quantum phase transitions

    International Nuclear Information System (INIS)

    Shaginyan, V.R.; Han, J.G.; Lee, J.

    2004-01-01

    The main features of fermion condensation quantum phase transition (FCQPT), which are distinctive in several aspects from that of conventional quantum phase transition (CQPT), are considered. We show that in contrast to CQPT, whose physics in quantum critical region is dominated by thermal and quantum fluctuations and characterized by the absence of quasiparticles, the physics of a Fermi system near FCQPT or undergone FCQPT is controlled by the system of quasiparticles resembling the Landau quasiparticles. Contrary to the Landau quasiparticles, the effective mass of these quasiparticles strongly depends on the temperature, magnetic fields, density, etc. This system of quasiparticles having general properties determines the universal behavior of the Fermi system in question. As a result, the universal behavior persists up to relatively high temperatures comparatively to the case when such a behavior is determined by CQPT. We analyze striking recent measurements of specific heat, charge and heat transport used to study the nature of magnetic field-induced QCP in heavy-fermion metal CeCoIn 5 and show that the observed facts are in good agreement with our scenario based on FCQPT and certainly seem to rule out the critical fluctuations related with CQPT. Our general consideration suggests that FCQPT and the emergence of novel quasiparticles near and behind FCQPT and resembling the Landau quasiparticles are distinctive features intrinsic to strongly correlated substances

  14. Random matrix theory of the energy-level statistics of disordered systems at the Anderson transition

    Energy Technology Data Exchange (ETDEWEB)

    Canali, C M

    1995-09-01

    We consider a family of random matrix ensembles (RME) invariant under similarity transformations and described by the probability density P(H) exp[-TrV(H)]. Dyson`s mean field theory (MFT) of the corresponding plasma model of eigenvalues is generalized to the case of weak confining potential, V(is an element of) {approx} A/2 ln{sup 2}(is an element of). The eigenvalue statistics derived from MFT are shown to deviate substantially from the classical Wigner-Dyson statistics when A < 1. By performing systematic Monte Carlo simulations on the plasma model, we compute all the relevant statistical properties of the RME with weak confinement. For A{sub c} approx. 0.4 the distribution function of the level spacings (LSDF) coincides in a large energy window with the energy LSDF of the three dimensional Anderson model at the metal-insulator transition. For the same A = A{sub c}, the RME eigenvalue-number variance is linear and its slope is equal to 0.32 {+-} 0.02, which is consistent with the value found for the Anderson model at the critical point. (author). 51 refs, 10 figs.

  15. Random matrix theory of the energy-level statistics of disordered systems at the Anderson transition

    International Nuclear Information System (INIS)

    Canali, C.M.

    1995-09-01

    We consider a family of random matrix ensembles (RME) invariant under similarity transformations and described by the probability density P(H) exp[-TrV(H)]. Dyson's mean field theory (MFT) of the corresponding plasma model of eigenvalues is generalized to the case of weak confining potential, V(is an element of) ∼ A/2 ln 2 (is an element of). The eigenvalue statistics derived from MFT are shown to deviate substantially from the classical Wigner-Dyson statistics when A c approx. 0.4 the distribution function of the level spacings (LSDF) coincides in a large energy window with the energy LSDF of the three dimensional Anderson model at the metal-insulator transition. For the same A = A c , the RME eigenvalue-number variance is linear and its slope is equal to 0.32 ± 0.02, which is consistent with the value found for the Anderson model at the critical point. (author). 51 refs, 10 figs

  16. Synthesis and characterization of nanostructured transition metal oxides for energy storage devices

    Science.gov (United States)

    Kim, Jong Woung

    Finding a promising material and constructing a new method to have both high energy and power are key issues for future energy storage systems. This dissertation addresses three different materials systems to resolve those issues. Pseudocapacitive materials such as RuO2 and MnO2 display high capacitance but Nb2O5, displays a different charge storage mechanism, one highly dependent on its crystal phase rather than its surface area. Various sol-gel techniques were used to synthesize the different phases of Nb2O5 and electrochemical testing was used to study their charge storage with some phases displaying comparable charge storage to MnO2. To overcome the electrical limitations of using an insulating material, the core-shell structure (Nb2O 5/C) was also examined and the method could be generalized to improve other pseudocapacitors. Besides electronic conductivity, the diffusion of the electrolyte ions through the shell material is a critical factor for fast charging/discharging in the core-shell structure. This dissertation also involves another topic, a reconfigurable electrode, that displays both high energy and power density. By constructing a reconfigurable electrode which has different electrical properties (metallic or insulating state) depending on the amount of intercalated `guest' ions into `host' material, it can be used as a battery or electrochemical capacitor material in the insulating or metallic state respectively. Metal oxide bronzes having metal-insulator transition were investigated in this study.

  17. Mott transition in Ga-doped Mg{sub x}Zn{sub 1-x}O: A direct observation

    Energy Technology Data Exchange (ETDEWEB)

    Wei Wei; Nori, Sudhakar [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC (United States); Jin Chunming [Department of Biomedical Engineering, University of North Carolina and North Carolina State University, Campus Box 7115, Raleigh, NC 27695-7115 (United States); Narayan, Jagdish [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC (United States); Narayan, Roger J., E-mail: roger_narayan@unc.edu [Department of Biomedical Engineering, University of North Carolina and North Carolina State University, Campus Box 7115, Raleigh, NC 27695-7115 (United States); Ponarin, Dmtri; Smirnov, Alex [Department of Chemistry, North Carolina State University, Raleigh, NC (United States)

    2010-07-25

    This paper reports the direct evidence for Mott transition in Ga-doped Mg{sub x}Zn{sub 1-x}O thin films. Highly transparent Ga-doped Mg{sub x}Zn{sub 1-x}O thin films were grown on c-plane sapphire substrates using pulsed laser deposition. 0.1 at.%, 0.5 at.% and 1 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O films were selected for resistivity measurements in the temperature range from 250 K to 40 mK. The 0.1 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O thin film showed typical insulator-like behavior and the 1 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O thin film showed typical metal-like behavior. The 0.5 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O film showed increasing resistivity with decreasing temperature; resistivity was saturated with a value of 1.15 x 10{sup -2} {Omega} cm at 40 mK, which is characteristic of the metal-insulator transition region. Temperature-dependent conductivity {sigma}(T) in the low temperature range revealed that the electron-electron scattering is the dominant dephasing mechanism. The inelastic scattering time is found to vary as T{sup -3/2}.

  18. Transit transparency.

    Science.gov (United States)

    2012-07-01

    Public transit agencies have employed intelligent systems for determining : schedules and routes and for monitoring the real-time location and status of their : vehicle fleets for nearly two decades. But until recently, the data generated by : daily ...

  19. Theory of Valence Transitions in Ytterbium and Europium Intermetallics

    International Nuclear Information System (INIS)

    Zlatic, V.; Freericks, J.K.

    2001-01-01

    The exact solution of the multi-component Falicov-Kimball model in infinite-dimensions is presented and used to discuss a new fixed point of valence fluctuating intermetallics with Yb and Eu ions. In these compounds, temperature, external magnetic field, pressure, or chemical pressure induce a transition between a metallic state with the f-ions in a mixed-valent (non-magnetic) configuration and a semi-metallic state with the f-ions in an integral-valence (paramagnetic) configuration. The zero-field transition occurs at the temperature T V , while the zero-temperature transition sets in at the critical field H c . We present the thermodynamic and dynamic properties of the model for an arbitrary concentration of d- and f -electrons. For large U, we find a MI transition, triggered by the temperature or field- induced change in the f-occupancy. (author)

  20. Effect of heavy-metal insertions at Fe/MgO interfaces on electric-field-induced modification of magnetocrystalline anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, K.; Nomura, T. [Department of Physics Engineering, Mie University, Tsu, Mie 514-8507 (Japan); Pradipto, A.-M. [Department of Physics Engineering, Mie University, Tsu, Mie 514-8507 (Japan); Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Nawa, K.; Akiyama, T.; Ito, T. [Department of Physics Engineering, Mie University, Tsu, Mie 514-8507 (Japan)

    2017-05-01

    Magnetocrystalline anisotropy (MCA) at Fe/MgO interfaces with insertions of 3d (Co, Ni), 4d (Ru, Rh, Pd), and 5d (Os, Ir, Pt) elements in external electric fields was investigated from first-principles calculations. The MCA energy and the electric-field-induced MCA modification dramatically depend on the inserted elements. Large MCA modification may be achieved by heavy-metal insertions, in which the strength of spin-orbit coupling of inserted elements and the position of the Fermi level relative to d band level play key roles. - Highlights: • MCA at Fe/MgO interface dramatically depends on insertions of 3d, 4d, and 5d elements. • Large electric-field-induced MCA modification is achieved by heavy-metal insertions. • Position of Fermi level relative to d band level plays key role in determining MCA.

  1. Electric Field-Induced Large Strain in Ni/Sb-co Doped (Bi0.5Na0.5) TiO3-Based Lead-Free Ceramics

    Science.gov (United States)

    Li, Liangliang; Hao, Jigong; Xu, Zhijun; Li, Wei; Chu, Ruiqing

    2018-02-01

    Lead-free piezoelectric ceramics (Bi0.5Na0.5)0.935Ba0.065Ti1- x (Ni0.5Sb0.5) x O3 (BNBT6.5- xNS) have been fabricated using conventional solid sintering technique. The effect of (Ni, Sb) doping on the phase structure and electrical properties of BNBT6.5 ceramics were systematically investigated. Results show that the addition of (Ni, Sb) destroyed the ferroelectric long-range order of BNBT6.5 and shifted the ferroelectric-relaxor transition temperature ( T F-R) down to room temperature. Thus, this process induced an ergodic relaxor phase at zero field in samples with x = 0.005. Under the electric field, the ergodic relaxor phase could reversibly transform to ferroelectric phase, which promotes the strain response with peak value of 0.38% (at 80 kV/cm, corresponding to d 33 * = 479 pm/V) at x = 0.005. Temperature-dependent measurements of both polarization and strain confirmed that the large strain originated from a reversible field-induced ergodic relaxor to ferroelectric phase transformation. The proposed material exhibits potential for nonlinear actuators.

  2. Electric Field Induce Blue Shift and Intensity Enhancement in 2D Exciplex Organic Light Emitting Diodes; Controlling Electron-Hole Separation.

    Science.gov (United States)

    Al Attar, Hameed A; Monkman, Andy P

    2016-09-01

    A simple but novel method is designed to study the characteristics of the exciplex state pinned at a donor-acceptor abrupt interface and the effect an external electric field has on these excited states. The reverse Onsager process, where the field induces blue-shifted emission and increases the efficiency of the exciplex emission as the e-h separation reduces, is discussed. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. In-situ studies of stress- and magnetic-field-induced phase transformation in a polymer-bonded Ni-Co-Mn-In composite

    International Nuclear Information System (INIS)

    Liu, D.M.; Nie, Z.H.; Wang, G.; Wang, Y.D.; Brown, D.E.; Pearson, J.; Liaw, P.K.; Ren, Y.

    2010-01-01

    A polymer-bonded Ni 45 Co 5 Mn 36.6 In 13.4 ferromagnetic shape-memory composite was fabricated, having magnetic-field-driven shape recovery properties. The thermo-magnetization curves of the composite suggested that the magnetic-field-induced reverse martensitic transformation occurs in the composite. The effects of temperature, stress, and magnetic-field on the phase transformation properties were systematically investigated using an in-situ high-energy X-ray diffraction technique. A temperature-induced reversible martensitic phase transformation was confirmed within the composite, showing a broad phase transformation interval. Stress-induced highly textured martensite was observed in the composite during uniaxial compressive loading, with a residual strain after unloading. The origin of the textured martensite can be explained by the grain-orientation-dependent Bain distortion energy. A recovery strain of ∼1.76% along the compression direction was evidenced in the pre-strained composite with an applied magnetic-field of 5 T. This recovery was caused by the magnetic-field-induced reverse martensitic phase transformation. The phase transformation properties of the ferromagnetic shape-memory composite, different from its bulk alloys, can be well explained by the Clausius-Clapeyron relation. The large magnetic-field-induced strain, together with good ductility and low cost, make the polymer-bonded Ni-Co-Mn-In composites potential candidates for magnetic-field-driven actuators.

  4. La interstitial defect-induced insulator-metal transition in the oxide heterostructures LaAl O3 /SrTi O3

    Science.gov (United States)

    Zhou, Jun; Yang, Ming; Feng, Yuan Ping; Rusydi, Andrivo

    2017-11-01

    Perovskite oxide interfaces have attracted tremendous research interest for their fundamental physics and promising all-oxide electronic applications. Here, based on first-principles calculations, we propose a surface La interstitial promoted interface insulator-metal transition in LaAl O3 /SrTi O3 (110). Compared with surface oxygen vacancies, which play a determining role on the insulator-metal transition of LaAl O3 /SrTi O3 (001) interfaces, we find that surface La interstitials can be more experimentally realistic and accessible for manipulation and more stable in an ambient atmospheric environment. Interestingly, these surface La interstitials also induce significant spin-splitting states with a Ti dy z/dx z character at a conducting LaAl O3 /SrTi O3 (110) interface. On the other hand, for insulating LaAl O3 /SrTi O3 (110) (<4 unit cells LaAl O3 thickness), a distortion between La (Al) and O atoms is found at the LaAl O3 side, partially compensating the polarization divergence. Our results reveal the origin of the metal-insulator transition in LaAl O3 /SrTi O3 (110) heterostructures, and also shed light on the manipulation of the superior properties of LaAl O3 /SrTi O3 (110) for different possibilities in electronic and magnetic applications.

  5. radiation and electric field induced effects on the order-disorder phase in lithium sodium sulphate crystals

    Science.gov (United States)

    Hamed, A. E.; Kassem, M. E.; El-Wahidy, E. F.; El-Abshehy, M. A.

    1995-03-01

    The temperature dependence of specific heat at constant pressure, Cp(T), has been measured for lithium sodium sulphate, LiNaSo4 crystals, at different ?-radiation doses and external bias electric field (Eb), in the temperature range 300-900 K. A nonlinear dependence of transition temperature, T1 and a remarkable change in the thermodynamic parameters, were obtained as the effect of both electric field and ?-radiation. The effect of ?-radiation doses on the phase transition in LiNaSO4 crystals was explained as due to an internal bias field, Eb, originating from the interaction of polar defects with the order parameter of the host lattice. The internal bias field effect on the behaviour of Cp(T) in LiNaSO4 crystals was similar to that of the external electric field (E).

  6. Phase transitions of anisotropic and exchange origins in TmFe.sub.5./sub.Al.sub.7./sub

    Czech Academy of Sciences Publication Activity Database

    Gorbunov, Denis; Yasin, S.; Andreev, Alexander V.; Mushnikov, N. V.; Rosenfeld, E.V.; Skourski, Y.; Zherlitsyn, S.; Wosnitza, J.

    2014-01-01

    Roč. 89, č. 21 (2014), "214417-1"-"214417-9" ISSN 1098-0121 R&D Projects: GA ČR GAP204/12/0150 Grant - others:AVČR(CZ) M100101203 Institutional support: RVO:68378271 Keywords : rare-earth intermetallics * ferrimagnetism * magnetic anisotropy * spin-reorientation transition * high magnetic fields * field-induced transition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

  7. Magnetic anisotropy and magnetic phase transitions in RFe.sub.5./sub.Al.sub.7./sub..

    Czech Academy of Sciences Publication Activity Database

    Gorbunov, Denis; Yasin, S.; Andreev, Alexander V.; Skourski, Y.; Mushnikov, N. V.; Rosenfeld, E.V.; Zherlitsyn, S.; Wosnitza, J.

    2015-01-01

    Roč. 383, Jun (2015), 208-214 ISSN 0304-8853 R&D Projects: GA ČR GAP204/12/0150 Grant - others:AVČR(CZ) M100101203 Institutional support: RVO:68378271 Keywords : rare-earth intermetallics * magnetic anisotropy * ferrimagnetism * high magnetic fields * spontaneous transition * field-induced transition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.357, year: 2015

  8. Gapless Spin Excitations in the Field-Induced Quantum Spin Liquid Phase of alpha-RuCl3

    OpenAIRE

    Zheng, Jiacheng; Ran, Kejing; Li, Tianrun; Wang, Jinghui; Wang, Pengshuai; Liu, Bin; Liu, Zhengxin; Normand, B.; Wen, Jinsheng; Yu, Weiqiang

    2017-01-01

    $\\alpha$-RuCl$_3$ is a leading candidate material for theobservation of physics related to the Kitaev quantum spin liquid (QSL). By combined susceptibility, specific-heat, and nuclear-magnetic-resonance measurements, we demonstrate that $\\alpha$-RuCl$_3$ undergoes a quantum phase transition to a QSL in a magnetic field of 7.5 T applied in the $ab$ plane. We show further that this high-field QSL phase has gapless spin excitations over a field range up to 16 T. This highly unconventional result...

  9. Gapless Spin Excitations in the Field-Induced Quantum Spin Liquid Phase of α -RuCl3

    Science.gov (United States)

    Zheng, Jiacheng; Ran, Kejing; Li, Tianrun; Wang, Jinghui; Wang, Pengshuai; Liu, Bin; Liu, Zheng-Xin; Normand, B.; Wen, Jinsheng; Yu, Weiqiang

    2017-12-01

    α -RuCl3 is a leading candidate material for the observation of physics related to the Kitaev quantum spin liquid (QSL). By combined susceptibility, specific-heat, and nuclear-magnetic-resonance measurements, we demonstrate that α -RuCl3 undergoes a quantum phase transition to a QSL in a magnetic field of 7.5 T applied in the a b plane. We show further that this high-field QSL phase has gapless spin excitations over a field range up to 16 T. This highly unconventional result, unknown in either Heisenberg or Kitaev magnets, offers insight essential to establishing the physics of α -RuCl3 .

  10. Magnetic field induced changes in linear and nonlinear optical properties of Ti incorporated Cr2O3 nanostructured thin film

    Science.gov (United States)

    Baraskar, Priyanka; Chouhan, Romita; Agrawal, Arpana; Choudhary, R. J.; Sen, Pranay K.; Sen, Pratima

    2018-03-01

    We report the magnetic field effect on the linear and nonlinear optical properties of pulse laser ablated Ti-incorporated Cr2O3 nanostructured thin film. Optical properties have been experimentally analyzed under Voigt geometry by performing ultraviolet-visible spectroscopy and closed aperture Z-scan technique using a continuous wave He-Ne laser source. Nonlinear optical response reveals a single peak-valley feature in the far field diffraction pattern in absence of magnetic field (B = 0) confirming self-defocussing effect. This feature switches to a valley-peak configuration for B = 5000G, suggesting self-focusing effect. For B ≤ 750G, oscillations were observed revealing the occurrence of higher order nonlinearity. Origin of nonlinearity is attributed to the near resonant d-d transitions observed from the broad peak occurring around 2 eV. These transitions are of magnetic origin and get modified under the application of external magnetic field. Our results suggest that magnetic field can be used as an effective tool to monitor the sign of optical nonlinearity and hence the thermal expansion in Ti-incorporated Cr2O3 nanostructured thin film.

  11. Synthesis and structural, magnetic, thermal, and transport properties of several transition metal oxides and aresnides

    Energy Technology Data Exchange (ETDEWEB)

    Das, Supriyo [Iowa State Univ., Ames, IA (United States)

    2010-01-01

    Oxide compounds containing the transition metal vanadium (V) have attracted a lot of attention in the field of condensed matter physics owing to their exhibition of interesting properties including metal-insulator transitons, structural transitions, ferromagnetic and an- tiferromagnetic orderings, and heavy fermion behavior. Binary vanadium oxides VnO2n-1 where 2 ≤ n ≤ 9 have triclinic structures and exhibit metal-insulator and antiferromagnetic transitions.[1–6] The only exception is V7O13 which remains metallic down to 4 K.[7] The ternary vanadium oxide LiV2O4 has the normal spinel structure, is metallic, does not un- dergo magnetic ordering and exhibits heavy fermion behavior below 10 K.[8] CaV2O4 has an orthorhombic structure[9, 10] with the vanadium spins forming zigzag chains and has been suggested to be a model system to study the gapless chiral phase.[11, 12] These provide great motivation for further investigation of some known vanadium compounds as well as to ex- plore new vanadium compounds in search of new physics. This thesis consists, in part, of experimental studies involving sample preparation and magnetic, transport, thermal, and x- ray measurements on some strongly correlated eletron systems containing the transition metal vanadium. The compounds studied are LiV2O4, YV4O8, and YbV4O8. The recent discovery of superconductivity in RFeAsO1-xFx (R = La, Ce, Pr, Gd, Tb, Dy, Sm, and Nd), and AFe2As2 (A = Ba, Sr, Ca, and Eu) doped with K, Na, or Cs at the A site with relatively high Tc has sparked tremendous activities in the condensed matter physics community and a renewed interest in the area of superconductivity as occurred following the discovery of the layered cuprate high Tc superconductors in 1986. To discover more supercon- ductors

  12. Gapless Spin Excitations in the Field-Induced Quantum Spin Liquid Phase of α-RuCl_{3}.

    Science.gov (United States)

    Zheng, Jiacheng; Ran, Kejing; Li, Tianrun; Wang, Jinghui; Wang, Pengshuai; Liu, Bin; Liu, Zheng-Xin; Normand, B; Wen, Jinsheng; Yu, Weiqiang

    2017-12-01

    α-RuCl_{3} is a leading candidate material for the observation of physics related to the Kitaev quantum spin liquid (QSL). By combined susceptibility, specific-heat, and nuclear-magnetic-resonance measurements, we demonstrate that α-RuCl_{3} undergoes a quantum phase transition to a QSL in a magnetic field of 7.5 T applied in the ab plane. We show further that this high-field QSL phase has gapless spin excitations over a field range up to 16 T. This highly unconventional result, unknown in either Heisenberg or Kitaev magnets, offers insight essential to establishing the physics of α-RuCl_{3}.

  13. Experimental evidence of stress-field-induced selection of variants in Ni-Mn-Ga ferromagnetic shape-memory alloys

    International Nuclear Information System (INIS)

    Wang, Y. D.; Brown, D. W.; Choo, H.; Liaw, P. K.; Benson, M. L.; Cong, D. Y.; Zuo, L.

    2007-01-01

    The in situ time-of-flight neutron-diffraction measurements captured well the martensitic transformation behavior of the Ni-Mn-Ga ferromagnetic shape-memory alloys under uniaxial stress fields. We found that a small uniaxial stress applied during phase transformation dramatically disturbed the distribution of variants in the product phase. The observed changes in the distributions of variants may be explained by considering the role of the minimum distortion energy of the Bain transformation in the effective partition among the variants belonging to the same orientation of parent phase. It was also found that transformation kinetics under various stress fields follows the scale law. The present investigations provide the fundamental approach for scaling the evolution of microstructures in martensitic transitions, which is of general interest to the condensed matter community

  14. Hysteresis of magnetostructural transitions: Repeatable and non-repeatable processes

    Science.gov (United States)

    Provenzano, Virgil; Della Torre, Edward; Bennett, Lawrence H.; ElBidweihy, Hatem

    2014-02-01

    The Gd5Ge2Si2 alloy and the off-stoichiometric Ni50Mn35In15 Heusler alloy belong to a special class of metallic materials that exhibit first-order magnetostructural transitions near room temperature. The magnetic properties of this class of materials have been extensively studied due to their interesting magnetic behavior and their potential for a number of technological applications such as refrigerants for near-room-temperature magnetic refrigeration. The thermally driven first-order transitions in these materials can be field-induced in the reverse order by applying a strong enough field. The field-induced transitions are typically accompanied by the presence of large magnetic hysteresis, the characteristics of which are a complicated function of temperature, field, and magneto-thermal history. In this study we show that the virgin curve, the major loop, and sequentially measured MH loops are the results of both repeatable and non-repeatable processes, in which the starting magnetostructural state, prior to the cycling of field, plays a major role. Using the Gd5Ge2Si2 and Ni50Mn35In15 alloys, as model materials, we show that a starting single phase state results in fully repeatable processes and large magnetic hysteresis, whereas a mixed phase starting state results in non-repeatable processes and smaller hysteresis.

  15. Hysteresis of magnetostructural transitions: Repeatable and non-repeatable processes

    International Nuclear Information System (INIS)

    Provenzano, Virgil; Della Torre, Edward; Bennett, Lawrence H.; ElBidweihy, Hatem

    2014-01-01

    The Gd 5 Ge 2 Si 2 alloy and the off-stoichiometric Ni 50 Mn 35 In 15 Heusler alloy belong to a special class of metallic materials that exhibit first-order magnetostructural transitions near room temperature. The magnetic properties of this class of materials have been extensively studied due to their interesting magnetic behavior and their potential for a number of technological applications such as refrigerants for near-room-temperature magnetic refrigeration. The thermally driven first-order transitions in these materials can be field-induced in the reverse order by applying a strong enough field. The field-induced transitions are typically accompanied by the presence of large magnetic hysteresis, the characteristics of which are a complicated function of temperature, field, and magneto-thermal history. In this study we show that the virgin curve, the major loop, and sequentially measured MH loops are the results of both repeatable and non-repeatable processes, in which the starting magnetostructural state, prior to the cycling of field, plays a major role. Using the Gd 5 Ge 2 Si 2 and Ni 50 Mn 35 In 15 alloys, as model materials, we show that a starting single phase state results in fully repeatable processes and large magnetic hysteresis, whereas a mixed phase starting state results in non-repeatable processes and smaller hysteresis

  16. Interacton-driven phenomena and Wigner transition in two-dimensional systems

    Science.gov (United States)

    Knighton, Talbot

    The formation of a quantum Wigner Cyrstal (WC) is one of the most anticipated predictions of electron-electron interaction. This is expected to occur in zero magnetic field when the Coulomb energy EC dominates over the Fermi energy EF (at a ratio rs ≡ EC/ EF ˜ 37) for temperatures T quench the kinetic energy. As B increases, various energies compete to produce the ground state. High purity systems with large interaction rs >1 tend to exhibit reentrant insulating phases (RIP) between the integer and fractional Hall states. These are suspected to be a form of WC, but the evidence is not yet conclusive. We use transport measurements to identify a conduction threshold in the RIP at filling factor nu = 0.37 (close to the 1/3 state) that is several orders of magnitude larger than the pinning observed in many other systems. We analyze the temperature and electric E-field dependence of this insulating phase and find them to be consistent with a second-order phase transition to WC. The measurements are performed on dilute holes p = 4 x 1010 cm-2 of mobility mu = 1/perho ˜ 2.5 x 106 cm 2/Vs in 20 nm GaAs/AlGaAs quantum square wells. We also discuss various other projects related to the study of topological states and strongly interacting charges: direct testing of the bulk conduction in a developing quantum Hall state using a corbino-disk-like geometry (or "anti-Hall bar"); preliminary results for ultra dilute charges in undoped heterojunction insulated gated field effect transistors; quantum capacitance measurement of the density of states across the vanadium dioxide metal insulator transition; progress towards a scanning capacitance measurement using the tip of an atomic force microscope; and graphene devices for optical detection.

  17. Decoupling the Lattice Distortion and Charge Doping Effects on the Phase Transition Behavior of VO2 by Titanium (Ti4+) Doping

    Science.gov (United States)

    Wu, Yanfei; Fan, Lele; Liu, Qinghua; Chen, Shi; Huang, Weifeng; Chen, Feihu; Liao, Guangming; Zou, Chongwen; Wu, Ziyu

    2015-01-01

    The mechanism for regulating the critical temperature (TC) of metal-insulator transition (MIT) in ions-doped VO2 systems is still a matter of debate, in particular, the unclear roles of lattice distortion and charge doping effects. To rule out the charge doping effect on the regulation of TC, we investigated Ti4+-doped VO2 (TixV1-xO2) system. It was observed that the TC of TixV1-xO2 samples first slightly decreased and then increased with increasing Ti concentration. X-ray absorption fine structure (XAFS) spectroscopy was used to explore the electronic states and local lattice structures around both Ti and V atoms in TixV1-xO2 samples. Our results revealed the local structure evolution from the initial anatase to the rutile-like structure around the Ti dopants. Furthermore, the host monoclinic VO2 lattice, specifically, the VO6 octahedra would be subtly distorted by Ti doping. The distortion of VO6 octahedra and the variation of TC showed almost the similar trend, confirming the direct effect of local structural perturbations on the phase transition behavior. By comparing other ion-doping systems, we point out that the charge doping is more effective than the lattice distortion in modulating the MIT behavior of VO2 materials. PMID:25950809

  18. Magnetic-field-induced dose effects in MR-guided radiotherapy systems: dependence on the magnetic field strength.

    Science.gov (United States)

    Raaijmakers, A J E; Raaymakers, B W; Lagendijk, J J W

    2008-02-21

    Several institutes are currently working on the development of a radiotherapy treatment system with online MR imaging (MRI) modality. The main difference between their designs is the magnetic field strength of the MRI system. While we have chosen a 1.5 Tesla (T) magnetic field strength, the Cross Cancer Institute in Edmonton will be using a 0.2 T MRI scanner and the company Viewray aims to use 0.3 T. The magnetic field strength will affect the severity of magnetic field dose effects, such as the electron return effect (ERE): considerable dose increase at tissue air boundaries due to returning electrons. This paper has investigated how the ERE dose increase depends on the magnetic field strength. Therefore, four situations where the ERE occurs have been simulated: ERE at the distal side of the beam, the lateral ERE, ERE in cylindrical air cavities and ERE in the lungs. The magnetic field comparison values were 0.2, 0.75, 1.5 and 3 T. Results show that, in general, magnetic field dose effects are reduced at lower magnetic field strengths. At the distal side, the ERE dose increase is largest for B = 0.75 T and depends on the irradiation field size for B = 0.2 T. The lateral ERE is strongest for B = 3 T but shows no effect for B = 0.2 T. Around cylindrical air cavities, dose inhomogeneities disappear if the radius of the cavity becomes small relative to the in-air radius of the secondary electron trajectories. At larger cavities (r > 1 cm), dose inhomogeneities exist for all magnetic field strengths. In water-lung-water phantoms, the ERE dose increase takes place at the water-lung transition and the dose decreases at the lung-water transition, but these effects are minimal for B = 0.2 T. These results will contribute to evaluating the trade-off between magnetic field dose effects and image quality of MR-guided radiotherapy systems.

  19. Magnetic-field-induced dose effects in MR-guided radiotherapy systems: dependence on the magnetic field strength

    International Nuclear Information System (INIS)

    Raaijmakers, A J E; Raaymakers, B W; Lagendijk, J J W

    2008-01-01

    Several institutes are currently working on the development of a radiotherapy treatment system with online MR imaging (MRI) modality. The main difference between their designs is the magnetic field strength of the MRI system. While we have chosen a 1.5 Tesla (T) magnetic field strength, the Cross Cancer Institute in Edmonton will be using a 0.2 T MRI scanner and the company Viewray aims to use 0.3 T. The magnetic field strength will affect the severity of magnetic field dose effects, such as the electron return effect (ERE): considerable dose increase at tissue air boundaries due to returning electrons. This paper has investigated how the ERE dose increase depends on the magnetic field strength. Therefore, four situations where the ERE occurs have been simulated: ERE at the distal side of the beam, the lateral ERE, ERE in cylindrical air cavities and ERE in the lungs. The magnetic field comparison values were 0.2, 0.75, 1.5 and 3 T. Results show that, in general, magnetic field dose effects are reduced at lower magnetic field strengths. At the distal side, the ERE dose increase is largest for B = 0.75 T and depends on the irradiation field size for B = 0.2 T. The lateral ERE is strongest for B = 3 T but shows no effect for B = 0.2 T. Around cylindrical air cavities, dose inhomogeneities disappear if the radius of the cavity becomes small relative to the in-air radius of the secondary electron trajectories. At larger cavities (r > 1 cm), dose inhomogeneities exist for all magnetic field strengths. In water-lung-water phantoms, the ERE dose increase takes place at the water-lung transition and the dose decreases at the lung-water transition, but these effects are minimal for B = 0.2 T. These results will contribute to evaluating the trade-off between magnetic field dose effects and image quality of MR-guided radiotherapy systems

  20. Transit space

    DEFF Research Database (Denmark)

    Raahauge, Kirsten Marie

    2008-01-01

    This article deals with representations of one specific city, Århus, Denmark, especially its central district. The analysis is based on anthropological fieldwork conducted in Skåde Bakker and Fedet, two well-off neighborhoods. The overall purpose of the project is to study perceptions of space...... and the interaction of cultural, social, and spatial organizations, as seen from the point of view of people living in Skåde Bakker and Fedet. The focus is on the city dwellers’ representations of the central district of Århus with specific reference to the concept of transit space. When applied to various Århusian...