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Sample records for few-layer epitaxial graphene

  1. Broadband electromagnetic response and ultrafast dynamics of few-layer epitaxial graphene

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Hyunyong; Borondics, Ferenc; Siegel, David A.; Zhou, Shuyun Y.; Martin, Michael C.; Lanzara, Alessandra; Kaindl, Robert A.

    2009-03-26

    We study the broadband optical conductivity and ultrafast carrier dynamics of epitaxial graphene in the few-layer limit. Equilibrium spectra of nominally buffer, monolayer, and multilayer graphene exhibit significant terahertz and near-infrared absorption, consistent with a model of intra- and interband transitions in a dense Dirac electron plasma. Non-equilibrium terahertz transmission changes after photoexcitation are shown to be dominated by excess hole carriers, with a 1.2-ps mono-exponential decay that refects the minority-carrier recombination time.

  2. Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth.

    Science.gov (United States)

    Munshi, A Mazid; Dheeraj, Dasa L; Fauske, Vidar T; Kim, Dong-Chul; van Helvoort, Antonius T J; Fimland, Bjørn-Ove; Weman, Helge

    2012-09-12

    By utilizing the reduced contact area of nanowires, we show that epitaxial growth of a broad range of semiconductors on graphene can in principle be achieved. A generic atomic model is presented which describes the epitaxial growth configurations applicable to all conventional semiconductor materials. The model is experimentally verified by demonstrating the growth of vertically aligned GaAs nanowires on graphite and few-layer graphene by the self-catalyzed vapor-liquid-solid technique using molecular beam epitaxy. A two-temperature growth strategy was used to increase the nanowire density. Due to the self-catalyzed growth technique used, the nanowires were found to have a regular hexagonal cross-sectional shape, and are uniform in length and diameter. Electron microscopy studies reveal an epitaxial relationship of the grown nanowires with the underlying graphitic substrates. Two relative orientations of the nanowire side-facets were observed, which is well explained by the proposed atomic model. A prototype of a single GaAs nanowire photodetector demonstrates a high-quality material. With GaAs being a model system, as well as a very useful material for various optoelectronic applications, we anticipate this particular GaAs nanowire/graphene hybrid to be promising for flexible and low-cost solar cells.

  3. Symmetry Breaking in Few Layer Graphene Films

    Energy Technology Data Exchange (ETDEWEB)

    Bostwick, A.; Ohta, T.; McChesney, J.L.; Emtsev, K.; Seyller,Th.; Horn, K.; Rotenberg, E.

    2007-05-25

    Recently, it was demonstrated that the quasiparticledynamics, the layer-dependent charge and potential, and the c-axisscreening coefficient could be extracted from measurements of thespectral function of few layer graphene films grown epitaxially on SiCusing angle-resolved photoemission spectroscopy (ARPES). In this articlewe review these findings, and present detailed methodology for extractingsuch parameters from ARPES. We also present detailed arguments againstthe possibility of an energy gap at the Dirac crossing ED.

  4. Study of EUV induced defects on few-layer graphene

    NARCIS (Netherlands)

    Gao, An; Rizo, P.J.; Zoethout, E.; Scaccabarozzi, L.; Lee, Christopher James; Banine, V.; Bijkerk, Frederik

    2012-01-01

    Defects in graphene greatly affect its properties1-3. Radiation induced-defects may reduce the long-term survivability of graphene-based nano-devices. Here, we expose few-layer graphene to extreme ultraviolet (EUV, 13.5nm) radiation and show there is a power-dependent increase in defect density. We

  5. Field emission from vertically aligned few-layer graphene

    International Nuclear Information System (INIS)

    Malesevic, Alexander; Kemps, Raymond; Vanhulsel, Annick; Chowdhury, Manish Pal; Volodin, Alexander; Van Haesendonck, Chris

    2008-01-01

    The electric field emission behavior of vertically aligned few-layer graphene was studied in a parallel plate-type setup. Few-layer graphene was synthesized in the absence of any metallic catalyst by microwave plasma enhanced chemical vapor deposition with gas mixtures of methane and hydrogen. The deposit consists of nanostructures that are several micrometers wide, highly crystalline stacks of four to six atomic layers of graphene, aligned vertically to the substrate surface in a high density network. The few-layer graphene is found to be a good field emitter, characterized by turn-on fields as low as 1 V/μm and field amplification factors up to several thousands. We observe a clear dependence of the few-layer graphene field emission behavior on the synthesis parameters: Hydrogen is identified as an efficient etchant to improve field emission, and samples grown on titanium show lower turn-on field values and higher amplification factors when compared to samples grown on silicon

  6. Shock-wave induced synthesis of few layer graphene nanosheets

    Science.gov (United States)

    Chen, Pengwan; Yin, Hao; Xu, Chunxiao; Gao, Xin; Zhou, Qiang; Qu, Liangti

    2017-06-01

    Shock wave action combining shock-induced chemical reaction will cause a series of changes of material physical and chemical properties, which is supposed to be a new method for material synthesis and modification. Using solid CO2 (dry ice) as the carbon source, few layer graphene nanosheets were successful synthesized by reduction of CO2 with calcium hydride under detonation-driven flyer impact loading in this study. Furthermore, by adding ammonium nitrate to the reaction system, nitrogen-doped graphene materials were formed in this one-step shock-wave treatment. Similarly, few layer graphene and nitrogen-doped graphene materials were also prepared through the reaction of calcium carbonate and magnesium induced by shock wave. The shock synthesis of graphene nanosheets requires a balance between the growth rate of graphene materials and the formation rate of carbon atoms. Meanwhile, the pressure and temperature are two important factors affecting the synthesis of few layer graphene nanosheets. This work is supported by the National Natural Science Foundation of China under Grant Nos. 11521062 and 11172043.

  7. High stability of few layer graphene nanoplatelets in various solvents

    KAUST Repository

    Xu, X

    2017-04-25

    Dispersion of few-layer graphene nanoplatelets (GNPs) in liquid media is a crucial step for various applications. Here, we highlight a simple, nondestructive method for preparing stable aqueous colloidal solutions with GNP powder quickly dispersed in 5 wt.% sodium–hypochlorite- (NaClO) and sodium-bromide- (NaBr) salted solvent by bath sonication. This method makes it possible to easily prepare a highly concentrated colloidal solution (1 mgcenterdotml−1) of GNPs that can easily be re-dispersed in water (treated GNPs). The aqueous suspension we prepared remained stable for longer than a few weeks. We made similar tests with various solvents and dispersibility appeared to decrease with decreasing polarity. High-concentration suspensions using our facile dispersion method could be of particular interest to the large community using graphene for a diversity of applications.

  8. Chemiresistive Gas Sensing by Few-Layered Graphene

    Science.gov (United States)

    Nemade, K. R.; Waghuley, S. A.

    2013-10-01

    A chemiresistive gas sensor based on few-layered graphene (FLG) has been fabricated and evaluated for carbon dioxide (CO2) and liquid petroleum gas (LPG) sensing. The electrochemical exfoliation method was used to synthesize FLG. The resulting sample of FLG was characterized by x-ray diffraction, Raman spectroscopy, atomic force microscopy, and transmission electron microscopy with selected-area diffraction. Ultraviolet-visible and fluorescence spectroscopy were employed to study the optical properties. Thermal behavior was analyzed through thermogravimetric-differential thermal analysis. The sensing response of the chemiresistor is defined as the ratio of resistance in gas to air at the stabilized resistance in air. The FLG chemiresistor exhibited good sensing response (3.83 for CO2, 0.92 for LPG), response time (11 s for CO2, 5 s for LPG), recovery time (14 s for CO2, 18 s for LPG), and resolution limit (3 ppm for CO2, 4 ppm for LPG), and excellent stability at room temperature. The gas sensing mechanism is discussed on the basis of marginal difference in Raman intensity and also by using defect chemistry through fluorescence measurements.

  9. Antiferro quadrupolar ordering in Fe intercalated few layers graphene

    Directory of Open Access Journals (Sweden)

    Abu Jahid Akhtar

    2013-07-01

    Full Text Available The π electron cloud above and below the honeycomb structure of graphene causes each carbon atom to carry a permanent electric quadrupole moment which can attach any cation to impart interesting physical properties. We have synthesized Fe intercalated graphene structures to investigate tunable magnetic properties as a result of this chemical modification. An interesting antiferro quadrupolar ordering is observed which arises due to a coupling between magnetic dipole moment of Fe and electric quadrupole moment on graphene surface. In contrast to antiferromagnetic Neel temperature (TN, here the ordering temperature (TQ increases from 35.5 K to 47.5 K as the magnetic field is raised upto 1 Tesla.

  10. Synthesis of hexagonal boron nitride graphene-like few layers

    Science.gov (United States)

    Yuan, S.; Toury, B.; Journet, C.; Brioude, A.

    2014-06-01

    Self-standing highly crystallized hexagonal boron nitride (h-BN) mono-, bi- and few-layers have been obtained for the first time via the Polymer Derived Ceramics (PDCs) route by adding lithium nitride (Li3N) micropowders to liquid-state polyborazylene (PBN). Incorporation of Li3N as a crystallization promoter allows the onset of crystallization of h-BN at a lower temperature (1200 °C) than under classical conditions (1800 °C). The hexagonal structure was confirmed by both electron and X-ray diffraction.Self-standing highly crystallized hexagonal boron nitride (h-BN) mono-, bi- and few-layers have been obtained for the first time via the Polymer Derived Ceramics (PDCs) route by adding lithium nitride (Li3N) micropowders to liquid-state polyborazylene (PBN). Incorporation of Li3N as a crystallization promoter allows the onset of crystallization of h-BN at a lower temperature (1200 °C) than under classical conditions (1800 °C). The hexagonal structure was confirmed by both electron and X-ray diffraction. Electronic supplementary information (ESI) available: See DOI: 10.1039/c4nr01017e

  11. Tunable quasiparticle band gap in few-layer GaSe/graphene van der Waals heterostructures

    Science.gov (United States)

    Ben Aziza, Zeineb; Pierucci, Debora; Henck, Hugo; Silly, Mathieu G.; David, Christophe; Yoon, Mina; Sirotti, Fausto; Xiao, Kai; Eddrief, Mahmoud; Girard, Jean-Christophe; Ouerghi, Abdelkarim

    2017-07-01

    Two-dimensional (2D) materials have recently been the focus of extensive research. By following a similar trend as graphene, other 2D materials, including transition metal dichalcogenides (M X2 ) and metal mono-chalcogenides (MX), show great potential for ultrathin nanoelectronic and optoelectronic devices. Despite the weak nature of interlayer forces in semiconducting MX materials, their electronic properties are highly dependent on the number of layers. Using scanning tunneling microscopy and spectroscopy, we demonstrate the tunability of the quasiparticle energy gap of few-layered gallium selenide (GaSe) directly grown on a bilayer graphene substrate by molecular beam epitaxy. Our results show that the band gap is about 3.50 ± 0.05 eV for single-tetralayer, 3.00 ±0.05 eV for bi-tetralayer, and 2.30 ±0.05 eV for tri-tetralayer GaSe. This band-gap evolution of GaSe, particularly the shift of the valence band with respect to the Fermi level, was confirmed by angle-resolved photoemission spectroscopy (ARPES) measurements and our theoretical calculations. Moreover, we observed a charge transfer in the GaSe/graphene van der Waals (vdW) heterostructure using ARPES. These findings demonstrate the high impact on the GaSe electronic band structure and electronic properties that can be obtained by the control of 2D materials layer thickness and the graphene induced doping.

  12. Wrinkled Few-Layer Graphene as Highly Efficient Load Bearer

    Czech Academy of Sciences Publication Activity Database

    Androulidakis, Ch.; Koukaras, E. N.; Řáhová, Jaroslava; Sampathkumar, Krishna; Parthenios, J.; Papagelis, K.; Frank, Otakar; Galiotis, C.

    2017-01-01

    Roč. 9, č. 31 (2017), s. 26593-26601 ISSN 1944-8244 R&D Projects: GA ČR GA14-15357S Institutional support: RVO:61388955 Keywords : graphene * wrinkling * Raman spectroscopy Subject RIV: CG - Electrochemistry OBOR OECD: Physical chemistry Impact factor: 7.504, year: 2016

  13. Thermoacoustic and photoacoustic characterizations of few-layer graphene by pulsed excitations

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xiong [Department of Electrical and Computer Engineering, The University of Arizona, Tucson, Arizona 85721 (United States); Department of Medical Imaging, The University of Arizona, Tucson, Arizona 85724 (United States); School of Information Science and Technology, ShanghaiTech University, Shanghai 200031 (China); Witte, Russell S. [Department of Medical Imaging, The University of Arizona, Tucson, Arizona 85724 (United States); Xin, Hao, E-mail: hxin@email.arizona.edu [Department of Electrical and Computer Engineering, The University of Arizona, Tucson, Arizona 85721 (United States)

    2016-04-04

    We characterized the thermoacoustic and photoacoustic properties of large-area, few-layer graphene by pulsed microwave and optical excitations. Due to its high electric conductivity and low heat capacity per unit area, graphene lends itself to excellent microwave and optical energy absorption and acoustic signal emanation due to the thermoacoustic effect. When exposed to pulsed microwave or optical radiation, distinct thermoacoustic and photoacoustic signals generated by the few-layer graphene are obtained due to microwave and laser absorption of the graphene, respectively. Clear thermoacoustic and photoacoustic images of large-area graphene sample are achieved. A numerical model is developed and the simulated results are in good accordance with the measured ones. This characterization work may find applications in ultrasound generator and detectors for microwave and optical radiation. It may also become an alternative characterization approach for graphene and other types of two-dimensional materials.

  14. EDITORIAL: Epitaxial graphene Epitaxial graphene

    Science.gov (United States)

    de Heer, Walt A.; Berger, Claire

    2012-04-01

    Graphene is widely regarded as an important new electronic material with interesting two-dimensional electron gas properties. Not only that, but graphene is widely considered to be an important new material for large-scale integrated electronic devices that may eventually even succeed silicon. In fact, there are countless publications that demonstrate the amazing applications potential of graphene. In order to realize graphene electronics, a platform is required that is compatible with large-scale electronics processing methods. It was clear from the outset that graphene grown epitaxially on silicon carbide substrates was exceptionally well suited as a platform for graphene-based electronics, not only because the graphene sheets are grown directly on electronics-grade silicon carbide (an important semiconductor in its own right), but also because these sheets are oriented with respect to the semiconductor. Moreover, the extremely high temperatures involved in production assure essentially defect-free and contamination-free materials with well-defined interfaces. Epitaxial graphene on silicon carbide is not a unique material, but actually a class of materials. It is a complex structure consisting of a reconstructed silicon carbide surface, which, for planar hexagonal silicon carbide, is either the silicon- or the carbon-terminated face, an interfacial carbon rich layer, followed by one or more graphene layers. Consequently, the structure of graphene films on silicon carbide turns out to be a rich surface-science puzzle that has been intensively studied and systematically unravelled with a wide variety of surface science probes. Moreover, the graphene films produced on the carbon-terminated face turn out to be rotationally stacked, resulting in unique and important structural and electronic properties. Finally, in contrast to essentially all other graphene production methods, epitaxial graphene can be grown on structured silicon carbide surfaces to produce graphene

  15. High yield production and purification of few layer graphene by gum arabic assisted physical sonication.

    Science.gov (United States)

    Chabot, Victor; Kim, Brian; Sloper, Brent; Tzoganakis, Costas; Yu, Aiping

    2013-01-01

    Exploiting the emulsification properties of low cost, environmentally safe Gum Arabic we demonstrate a high yield process to produce a few layer graphene with a low defect ratio, maintaining the pristine graphite structure. In addition, we demonstrate the need for and efficacy of an acid hydrolysis treatment to remove the polymer residues to produce 100% pure graphene. The scalable process gives yield of up to 5 wt% graphene based on 10 g starting graphite. The graphene product is compared with reduced graphene oxide produced through Hummer's method using UV-visible spectroscopy, SEM, TEM, and Raman spectroscopy. The two graphene materials show significant difference in these characterizations. Further, the film fabricated from this graphene exhibits 20 times higher electrical conductivity than that of the reduced graphene oxide. Sonication processing of graphite with environmentally approved biopolymers such as Gum Arabic opens up a scalable avenue for production of cheap graphene.

  16. Thinning and functionalization of few-layer graphene sheets by CF4 plasma treatment

    KAUST Repository

    Shen, Chao

    2012-05-24

    Structural changes of few-layer graphene sheets induced by CF4 plasma treatment are studied by optical microscopy and Raman spectroscopy, together with theoretical simulation. Experimental results suggest a thickness reduction of few-layer graphene sheets subjected to prolonged CF4 plasma treatment while plasma treatment with short time only leads to fluorine functionalization on the surface layer by formation of covalent bonds. Raman spectra reveal an increase in disorder by physical disruption of the graphene lattice as well as functionalization during the plasma treatment. The F/CF3 adsorption and the lattice distortion produced are proved by theoretical simulation using density functional theory, which also predicts p-type doping and Dirac cone splitting in CF4 plasma-treated graphene sheets that may have potential in future graphene-based micro/nanodevices.

  17. Direct synthesis of few-layer graphene supported platinum nanocatalyst for methanol oxidation

    Science.gov (United States)

    Tan, Hong; Ma, Xiaohui; Sheng, Leimei; An, Kang; Yu, Liming; Zhao, Hongbin; Xu, Jiaqiang; Ren, Wei; Zhao, Xinluo

    2014-11-01

    High-crystalline few-layer graphene supported Pt nanoparticles have been synthesized by arc discharge evaporation of carbon electrodes containing Pt element. A high-temperature treatment under hydrogen atmosphere has been carried out to obtain a new type of Pt/graphene catalyst for methanol oxidation in direct methanol fuel cell. The morphology and structure characterizations of as-grown few-layer graphene supported Pt nanoparticles and Pt/graphene catalysts have been studied by Raman spectroscopy, scanning electron microscopy with energy-dispersive spectroscopy, and high-resolution transmission electron microscopy. Cyclic voltammograms and chronoamperometric curves show that our present Pt/graphene catalysts have larger current density for methanol oxidation, higher tolerance to carbon monoxide poisoning, and better stability during the operating procedure, compared to commercial Pt/C catalysts.

  18. Magneto-transport properties of a random distribution of few-layer graphene patches

    International Nuclear Information System (INIS)

    Iacovella, Fabrice; Mitioglu, Anatolie; Pierre, Mathieu; Raquet, Bertrand; Goiran, Michel; Plochocka, Paulina; Escoffier, Walter; Trinsoutrot, Pierre; Vergnes, Hugues; Caussat, Brigitte; Conédéra, Véronique

    2014-01-01

    In this study, we address the electronic properties of conducting films constituted of an array of randomly distributed few layer graphene patches and investigate on their most salient galvanometric features in the moderate and extreme disordered limit. We demonstrate that, in annealed devices, the ambipolar behaviour and the onset of Landau level quantization in high magnetic field constitute robust hallmarks of few-layer graphene films. In the strong disorder limit, however, the magneto-transport properties are best described by a variable-range hopping behaviour. A large negative magneto-conductance is observed at the charge neutrality point, in consistency with localized transport regime

  19. Epitaxial deposition of silver ultrafine nano-clusters on defect-free surfaces of HOPG-derived few-layer graphene in a UHV multi-chamber by in-situ STM, ex-situ XPS and ab initio calculations

    CSIR Research Space (South Africa)

    Ndlovu, GF

    2012-03-01

    Full Text Available for the position of the Ag atom in the C-benzene ring of graphene. Of the three sites, the C-C bridge, the C-hexagon hollow, and the direct top of the C atom, Ag prefers to stay on top of the C atom, contrary to expectation of the hexagon-close packing. Ab initio...

  20. Interlayer catalytic exfoliation realizing scalable production of large-size pristine few-layer graphene

    OpenAIRE

    Geng, Xiumei; Guo, Yufen; Li, Dongfang; Li, Weiwei; Zhu, Chao; Wei, Xiangfei; Chen, Mingliang; Gao, Song; Qiu, Shengqiang; Gong, Youpin; Wu, Liqiong; Long, Mingsheng; Sun, Mengtao; Pan, Gebo; Liu, Liwei

    2013-01-01

    Mass production of reduced graphene oxide and graphene nanoplatelets has recently been achieved. However, a great challenge still remains in realizing large-quantity and high-quality production of large-size thin few-layer graphene (FLG). Here, we create a novel route to solve the issue by employing one-time-only interlayer catalytic exfoliation (ICE) of salt-intercalated graphite. The typical FLG with a large lateral size of tens of microns and a thickness less than 2?nm have been obtained b...

  1. Dynamic Negative Compressibility of Few-Layer Graphene, h-BN, and MoS2

    Science.gov (United States)

    Neves, Bernardo; Barboza, Ana Paula; Chacham, Helio; Oliveira, Camilla; Fernandes, Thales; Martins Ferreira, Erlon; Archanjo, Braulio; Batista, Ronaldo; Oliveira, Alan

    2013-03-01

    We report a novel mechanical response of few-layer graphene, h-BN, and MoS2 to the simultaneous compression and shear by an atomic force microscope (AFM) tip. The response is characterized by the vertical expansion of these two-dimensional (2D) layered materials upon compression. Such effect is proportional to the applied load, leading to vertical strain values (opposite to the applied force) of up to 150%. The effect is null in the absence of shear, increases with tip velocity, and is anisotropic. It also has similar magnitudes in these solid lubricant materials (few-layer graphene, h-BN, and MoS2), but it is absent in single-layer graphene and in few-layer mica and Bi2Se3. We propose a physical mechanism for the effect where the combined compressive and shear stresses from the tip induce dynamical wrinkling on the upper material layers, leading to the observed flake thickening. The new effect (and, therefore, the proposed wrinkling) is reversible in the three materials where it is observed.[2] Financial support from CNPq, Fapemig, Rede Nacional de Pesquisa em Nanotubos de Carbono and INCT-Nano-Carbono

  2. Environmental Synthesis of Few Layers Graphene Sheets Using Ultrasonic Exfoliation with Enhanced Electrical and Thermal Properties.

    Directory of Open Access Journals (Sweden)

    Monir Noroozi

    Full Text Available In this paper, we report how few layers graphene that can be produced in large quantity with low defect ratio from exfoliation of graphite by using a high intensity probe sonication in water containing liquid hand soap and PVP. It was founded that the graphene powder obtained by this simple exfoliation method after the heat treatment had an excellent exfoliation into a single or layered graphene sheets. The UV-visible spectroscopy, FESEM, TEM, X-ray powder diffraction and Raman spectroscopy was used to analyse the graphene product. The thermal diffusivity of the samples was analysed using a highly accurate thermal-wave cavity photothermal technique. The data obtained showed excellent enhancement in the thermal diffusivity of the graphene dispersion. This well-dispersed graphene was then used to fabricate an electrically conductive polymer-graphene film composite. The results demonstrated that this low cost and environmental friendly technique allowed to the production of high quality layered graphene sheets, improved the thermal and electrical properties. This may find use in the wide range of applications based on graphene.

  3. Vanishing stick-slip friction in few-layer graphenes: the thickness effect.

    Science.gov (United States)

    Xu, Liang; Ma, Tian-Bao; Hu, Yuan-Zhong; Wang, Hui

    2011-07-15

    We report the thickness dependence of intrinsic friction in few-layer graphenes, adopting molecular dynamics simulations. The friction force drops dramatically with decreasing number of layers and finally approaches zero with two or three layers. The results, which are robust over a wide range of temperature, shear velocity, and pressure are quantitatively explained by a theoretical model with regard to lateral stiffness, slip length, and maximum lateral force, which could provide a new conceptual framework for understanding stick-slip friction. The results reveal the crucial role of the dimensional effect in nanoscale friction, and could be helpful in the design of graphene-based nanodevices.

  4. Extremely large magnetoresistance in few-layer graphene/boron-nitride heterostructures.

    Science.gov (United States)

    Gopinadhan, Kalon; Shin, Young Jun; Jalil, Rashid; Venkatesan, Thirumalai; Geim, Andre K; Castro Neto, Antonio H; Yang, Hyunsoo

    2015-09-21

    Understanding magnetoresistance, the change in electrical resistance under an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials provide an unprecedented opportunity to explore magnetoresistance at its nascent stage of structural formation. Here we report an extremely large local magnetoresistance of ∼2,000% at 400 K and a non-local magnetoresistance of >90,000% in an applied magnetic field of 9 T at 300 K in few-layer graphene/boron-nitride heterostructures. The local magnetoresistance is understood to arise from large differential transport parameters, such as the carrier mobility, across various layers of few-layer graphene upon a normal magnetic field, whereas the non-local magnetoresistance is due to the magnetic field induced Ettingshausen-Nernst effect. Non-local magnetoresistance suggests the possibility of a graphene-based gate tunable thermal switch. In addition, our results demonstrate that graphene heterostructures may be promising for magnetic field sensing applications.

  5. Hybrid Doping of Few-Layer Graphene via a Combination of Intercalation and Surface Doping

    KAUST Repository

    Mansour, Ahmed

    2017-05-23

    Surface molecular doping of graphene has been shown to modify its work function and increase its conductivity. However, the associated shifts in work function and increases in carrier concentration are highly coupled and limited by the surface coverage of dopant molecules on graphene. Here we show that few-layer graphene (FLG) can be doped using a hybrid approach, effectively combining surface doping by larger (metal-)organic molecules, while smaller molecules, such as Br2 and FeCl3, intercalate into the bulk. Intercalation tunes the carrier concentration more effectively, whereas surface doping of intercalated FLG can be used to tune its work function without reducing the carrier mobility. This multi-modal doping approach yields a very high carrier density and tunable work function for FLG, demonstrating a new versatile platform for fabricating graphene-based contacts for electronic, optoelectronic and photovoltaic applications.

  6. Structural and optical properties of cobalt slanted nanopillars conformally coated with few-layer graphene

    Science.gov (United States)

    Wilson, Peter M.; Lipatov, Alexey; Schmidt, Daniel; Schubert, Eva; Schubert, Mathias; Sinitskii, Alexander; Hofmann, Tino

    2015-06-01

    Optical characterization of anisotropic multicomponent nanostructures is generally not a trivial task, since the relation between a material's structural properties and its permittivity tensor is nonlinear. In this regard, an array of slanted cobalt nanopillars that are conformally coated with few-layer graphene is a particularly challenging object for optical characterization, as it has a complex anisotropic geometry and comprises several materials with different topologies and filling fractions. Normally, a detailed characterization of such complex nanostructures would require a combination of several microscopic and spectroscopic techniques. In this letter, we demonstrate that the important structural parameters of these graphene-coated sculptured thin films can be determined using a fast and simple generalized spectroscopic ellipsometry test combined with an anisotropic Bruggeman effective medium approximation. The graphene coverage as well as structural parameters of nanostructured thin films agree excellently with electron microscopy and Raman spectroscopy observations. The demonstrated optical approach may also be applied to the characterization of other nanostructured materials.

  7. Facile electrochemical synthesis of few layered graphene from discharged battery electrode and its

    Directory of Open Access Journals (Sweden)

    Santosh K. Tiwari

    2017-05-01

    Full Text Available A cost-effective, simple and non-hazardous route for synthesis of few-layered graphene from waste zinc carbon battery (ZCB electrodes via electrochemical expansion (ECE has been reported. In this synthesis, we have electrochemically exfoliated the graphene layers, by intercalating sodium dodecyl benzenesulfonate (SDBS surfactant into graphitic layers at different D.C. voltages with a constant SDBS concentration. The graphene sheets were isolated, purified and characterized by Transmission electron microscopy (TEM, Scanning electron microscopy (SEM, Fourier transform infrared spectrometry (FTIR, X-ray diffraction (XRD, Raman spectrometry, Ultraviolet absorption (UV, Selected area electron diffraction (SAED and Cyclic voltammetry. Best result was obtained at 4.5 V of D.C. A possible mechanism for the intercalation process has been proposed. A promising application of the produced material for supercapacitor application has also been explored in combination with polyaniline.

  8. Controlling single and few-layer graphene crystals growth in a solid carbon source based chemical vapor deposition

    International Nuclear Information System (INIS)

    Papon, Remi; Sharma, Subash; Shinde, Sachin M.; Vishwakarma, Riteshkumar; Tanemura, Masaki; Kalita, Golap

    2014-01-01

    Here, we reveal the growth process of single and few-layer graphene crystals in the solid carbon source based chemical vapor deposition (CVD) technique. Nucleation and growth of graphene crystals on a polycrystalline Cu foil are significantly affected by the injection of carbon atoms with pyrolysis rate of the carbon source. We observe micron length ribbons like growth front as well as saturated growth edges of graphene crystals depending on growth conditions. Controlling the pyrolysis rate of carbon source, monolayer and few-layer crystals and corresponding continuous films are obtained. In a controlled process, we observed growth of large monolayer graphene crystals, which interconnect and merge together to form a continuous film. On the other hand, adlayer growth is observed with an increased pyrolysis rate, resulting few-layer graphene crystal structure and merged continuous film. The understanding of monolayer and few-layer crystals growth in the developed CVD process can be significant to grow graphene with controlled layer numbers.

  9. AB stacked few layer graphene growth by chemical vapor deposition on single crystal Rh(1 1 1) and electronic structure characterization

    Energy Technology Data Exchange (ETDEWEB)

    Kordatos, Apostolis [National Center for Scientific Research “Demokritos”, Athens, 15310 (Greece); Kelaidis, Nikolaos, E-mail: n.kelaidis@inn.demokritos.gr [National Center for Scientific Research “Demokritos”, Athens, 15310 (Greece); Giamini, Sigiava Aminalragia [National Center for Scientific Research “Demokritos”, Athens, 15310 (Greece); University of Athens, Department of Physics, Section of Solid State Physics, Athens, 15684 Greece (Greece); Marquez-Velasco, Jose [National Center for Scientific Research “Demokritos”, Athens, 15310 (Greece); National Technical University of Athens, Department of Physics, Athens, 15784 Greece (Greece); Xenogiannopoulou, Evangelia; Tsipas, Polychronis; Kordas, George; Dimoulas, Athanasios [National Center for Scientific Research “Demokritos”, Athens, 15310 (Greece)

    2016-04-30

    Highlights: • Growth of non-defective few layer graphene on Rh(1 1 1) substrates using an ambient- pressure CVD method. • Control of graphene stacking order via the cool-down rate. • Graphene is grown with a mainly AB-stacking geometry on single-crystalline Rhodium for a slow cool-down rate and non-AB for a very fast cool-down. • Good epitaxial orientation of the surface is presented through the RHEED data and confirmed with ARPES characterization for the lower cool-down rate, where graphene's ΓK direction a perfectly aligned with the ΓK direction of the Rh(1 1 1) single crystal. - Abstract: Graphene synthesis on single crystal Rh(1 1 1) catalytic substrates is performed by Chemical Vapor Deposition (CVD) at 1000 °C and atmospheric pressure. Raman analysis shows full substrate coverage with few layer graphene. It is found that the cool-down rate strongly affects the graphene stacking order. When lowered, the percentage of AB (Bernal) -stacked regions increases, leading to an almost full AB stacking order. When increased, the percentage of AB-stacked graphene regions decreases to a point where almost a full non AB-stacked graphene is grown. For a slow cool-down rate, graphene with AB stacking order and good epitaxial orientation with the substrate is achieved. This is indicated mainly by Raman characterization and confirmed by Reflection high-energy electron diffraction (RHEED) imaging. Additional Scanning Tunneling Microscopy (STM) topography data confirm that the grown graphene is mainly an AB-stacked structure. The electronic structure of the graphene/Rh(1 1 1) system is examined by Angle resolved Photo-Emission Spectroscopy (ARPES), where σ and π bands of graphene, are observed. Graphene's ΓK direction is aligned with the ΓK direction of the substrate, indicating no significant contribution from rotated domains.

  10. AB stacked few layer graphene growth by chemical vapor deposition on single crystal Rh(1 1 1) and electronic structure characterization

    International Nuclear Information System (INIS)

    Kordatos, Apostolis; Kelaidis, Nikolaos; Giamini, Sigiava Aminalragia; Marquez-Velasco, Jose; Xenogiannopoulou, Evangelia; Tsipas, Polychronis; Kordas, George; Dimoulas, Athanasios

    2016-01-01

    Highlights: • Growth of non-defective few layer graphene on Rh(1 1 1) substrates using an ambient- pressure CVD method. • Control of graphene stacking order via the cool-down rate. • Graphene is grown with a mainly AB-stacking geometry on single-crystalline Rhodium for a slow cool-down rate and non-AB for a very fast cool-down. • Good epitaxial orientation of the surface is presented through the RHEED data and confirmed with ARPES characterization for the lower cool-down rate, where graphene's ΓK direction a perfectly aligned with the ΓK direction of the Rh(1 1 1) single crystal. - Abstract: Graphene synthesis on single crystal Rh(1 1 1) catalytic substrates is performed by Chemical Vapor Deposition (CVD) at 1000 °C and atmospheric pressure. Raman analysis shows full substrate coverage with few layer graphene. It is found that the cool-down rate strongly affects the graphene stacking order. When lowered, the percentage of AB (Bernal) -stacked regions increases, leading to an almost full AB stacking order. When increased, the percentage of AB-stacked graphene regions decreases to a point where almost a full non AB-stacked graphene is grown. For a slow cool-down rate, graphene with AB stacking order and good epitaxial orientation with the substrate is achieved. This is indicated mainly by Raman characterization and confirmed by Reflection high-energy electron diffraction (RHEED) imaging. Additional Scanning Tunneling Microscopy (STM) topography data confirm that the grown graphene is mainly an AB-stacked structure. The electronic structure of the graphene/Rh(1 1 1) system is examined by Angle resolved Photo-Emission Spectroscopy (ARPES), where σ and π bands of graphene, are observed. Graphene's ΓK direction is aligned with the ΓK direction of the substrate, indicating no significant contribution from rotated domains.

  11. Biomolecules Electrochemical Sensing Properties of a PMo11V@N-Doped Few Layer Graphene Nanocomposite

    Directory of Open Access Journals (Sweden)

    Diana M. Fernandes

    2015-05-01

    Full Text Available A novel hybrid nanocomposite, PMo11V@N-doped few layer graphene, was prepared by a one-step protocol through direct immobilization of the tetrabutylammonium salt of a vanadium-substituted phosphomolybdate (PMo11V onto N-doped few layer graphene (N-FLG. The nanocomposite characterization by FTIR and XPS confirmed its successful synthesis. Glassy carbon modified electrodes with PMo11V and PMo11V@N-FLG showed cyclic voltammograms consistent with surface-confined redox processes attributed to Mo-centred reductions (MoVI→MoV and a vanadium reduction (VV→VIV. Furthermore, PMo11V@N-FLG modified electrodes showed good stability and well-resolved redox peaks with high current intensities. The observed enhancement of PMo11V electrochemical properties is a consequence of a strong electronic communication between the POM and the N-doped few layer graphene. Additionally, the electro-catalytic and sensing properties towards acetaminophen (AC and theophylline (TP were evaluated by voltammetric techniques using a glassy carbon electrode modified with PMo11V@N-FLG. Under the conditions used, the square wave voltammetric peak current increased linearly with AC concentration in the presence of TP, but showing two linear ranges: 1.2 × 10−6 to 1.2 × 10−4 and 1.2 × 10−4 to 4.8 × 10−4 mol dm−3, with different AC sensitivity values, 0.022 A/mol dm−3 and 0.035 A/mol dm−3, respectively (detection limit, DL = 7.5 × 10−7 mol dm−3.

  12. Unforeseen high temperature and humidity stability of FeCl3 intercalated few layer graphene

    DEFF Research Database (Denmark)

    Wehenkel, Dominique Joseph; Bointon, Thomas Hardisty; Booth, Tim

    2015-01-01

    microscopy and Raman spectroscopy conclusively demonstrate the unforseen stability of this transparent conductor to a relative humidity up to 100% at room temperature for 25 days, to a temperature up to 150 degrees C in atmosphere and to a temperature as high as 620 degrees C in vacuum, that is more than......We present the first systematic study of the stability of the structure and electrical properties of FeCl3 intercalated few-layer graphene to high levels of humidity and high temperature. Complementary experimental techniques such as electrical transport, high resolution transmission electron...

  13. Production of High-quality Few-layer Graphene Flakes by Intercalation and Exfoliation

    KAUST Repository

    Alzahrani, Areej A.

    2017-11-30

    Graphene, a two-dimensional nanomaterial, has been given much attention since it was first isolated in 2004. Driving this intensive research effort are the unique properties of this one atom thick sheet of carbon, in particular its electrical, thermal and mechanical properties. While the technological applications proposed for graphene abound, its low-cost production in large scales is still a matter of interrogation. Simple methods to obtain few-layered graphene flakes of high structural quality are being investigated with the exfoliation of graphite taking a prominent place in this arena. From the many suggested approaches, the most promising involve the use of liquid media assisted by intercalants and shear forces acting on the basal layers of graphite. In this thesis, it is discussed how a novel method was developed to produce flakes with consistent lateral dimensions that are also few-layered and retain the expected structural and chemical characteristics of graphene. Here, the source material was a commercially available graphiteintercalated compound, also known as expandable graphite. Several exfoliation-inducing tools were investigated including the use of blenders, homogenizers, and ultrasonic processors. To aid in this process, various solvents and intercalants were explored under different reactive conditions. The more efficient approach in yielding defect-free thin flakes was the use of thermally expanded graphite in boiling dimethylformamide followed by ultrasonic processing and centrifugation. In parallel, a method to fraction the flakes as a function of their lateral size was developed. Ultimately, it was possible to obtain samples of graphene flakes with a lateral dimension of a few micrometers (<5 μm) and thickness of 1-3 nm (i.e. <10 layers).

  14. Self-organized arrays of graphene and few-layer graphene quantum dots in fluorographene matrix: Charge transient spectroscopy

    Science.gov (United States)

    Antonova, Irina V.; Nebogatikova, Nadezhda A.; Prinz, Victor Ya.

    2014-05-01

    Arrays of graphene or few-layer graphene quantum dots (QDs) embedded in a partially fluorinated graphene matrix were created by chemical functionalization of layers. Charge transient spectroscopy employed for investigation of obtained QD systems (size 20-70 nm) has allowed us to examine the QD energy spectra and the time of carrier emission (or charge relaxation) from QDs as a function of film thickness. It was found that the characteristic time of carrier emission from QDs decreased markedly (by about four orders of magnitude) on increasing the QD thickness from one graphene monolayer to 3 nm. Daylight-assisted measurements also demonstrate a strong decrease of the carrier emission time.

  15. Scalable production of wrinkled and few-layered graphene sheets and their use for oil and organic solvent absorption.

    Science.gov (United States)

    Liu, Dan; Lei, Weiwei; Chen, Ying

    2015-03-14

    High-quality wrinkled and few-layered graphene sheets have been produced via a mechano-thermal exfoliation process for a simple, effective and low-cost mass production. Graphene sheets were produced by first ball milling of graphite with ammonium chloride followed by thermal annealing at 800 °C in nitrogen gas. The few layered graphene sheets show highly efficient selectivity and capacity for the absorption of petroleum products as well as organic solvents such as ethanol, cyclohexane and chloroform (up to 82, 42 and 98 times of their own weight, respectively). The saturated few-layered graphene sheets can be cleaned for reuse by simply burning in air. The low-cost strategy for mass production and easy recycling routes demonstrate the great potential of few-layered graphene sheets for oil removal.

  16. Synthesis of few layer single crystal graphene grains on platinum by chemical vapour deposition

    Directory of Open Access Journals (Sweden)

    S. Karamat

    2015-08-01

    Full Text Available The present competition of graphene electronics demands an efficient route which produces high quality and large area graphene. Chemical vapour deposition technique, where hydrocarbons dissociate in to active carbon species and form graphene layer on the desired metal catalyst via nucleation is considered as the most suitable method. In this study, single layer graphene with the presence of few layer single crystal graphene grains were grown on Pt foil via chemical vapour deposition. The higher growth temperature changes the surface morphology of the Pt foil so a delicate process of hydrogen bubbling was used to peel off graphene from Pt foil samples with the mechanical support of photoresist and further transferred to SiO2/Si substrates for analysis. Optical microscopy of the graphene transferred samples showed the regions of single layer along with different oriented graphene domains. Two type of interlayer stacking sequences, Bernal and twisted, were observed in the graphene grains. The presence of different stacking sequences in the graphene layers influence the electronic and optical properties; in Bernal stacking the band gap can be tunable and in twisted stacking the overall sheet resistance can be reduced. Grain boundaries of Pt provides low energy sites to the carbon species, therefore the nucleation of grains are more at the boundaries. The stacking order and the number of layers in grains were seen more clearly with scanning electron microscopy. Raman spectroscopy showed high quality graphene samples due to very small D peak. 2D Raman peak for single layer graphene showed full width half maximum (FWHM value of 30 cm−1. At points A, B and C, Bernal stacked grain showed FWHM values of 51.22, 58.45 and 64.72 cm−1, while twisted stacked grain showed the FWHM values of 27.26, 28.83 and 20.99 cm−1, respectively. FWHM values of 2D peak of Bernal stacked grain showed an increase of 20–30 cm−1 as compare to single layer graphene

  17. Carrier mobility and scattering lifetime in electric double-layer gated few-layer graphene

    Energy Technology Data Exchange (ETDEWEB)

    Piatti, E.; Galasso, S.; Tortello, M.; Nair, J.R.; Gerbaldi, C. [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, 10129 Torino (Italy); Bruna, M.; Borini, S. [Istituto Nazionale di Ricerca Metrologica (INRIM), 10135 Torino (Italy); Daghero, D. [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, 10129 Torino (Italy); Gonnelli, R.S., E-mail: renato.gonnelli@polito.it [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, 10129 Torino (Italy)

    2017-02-15

    Highlights: • We fabricated few-layer graphene FETs by mechanical exfoliation and standard microfabrication techniques. • We employed a Li-TFSI based ion gel to induce carrier densities as high as ≈6e14 e{sup −}/cm{sup 2} in the devices' channel. • We found a strong asymmetry in the sheet conductance and mobility doping dependences between electron and hole doping. • We combined the experimental results with ab initio DFT calculations to obtain the average scattering lifetime of the charge carriers. • We found that the increase in the carrier density and an unexpected increase in the density of charged scattering centers compete in determining the scattering lifetime. - Abstract: We fabricate electric double-layer field-effect transistor (EDL-FET) devices on mechanically exfoliated few-layer graphene. We exploit the large capacitance of a polymeric electrolyte to study the transport properties of three, four and five-layer samples under a large induced surface charge density both above and below the glass transition temperature of the polymer. We find that the carrier mobility shows a strong asymmetry between the hole and electron doping regime. We then employ ab initio density functional theory (DFT) calculations to determine the average scattering lifetime from the experimental data. We explain its peculiar dependence on the carrier density in terms of the specific properties of the electrolyte we used in our experiments.

  18. Interlayer catalytic exfoliation realizing scalable production of large-size pristine few-layer graphene

    Science.gov (United States)

    Geng, Xiumei; Guo, Yufen; Li, Dongfang; Li, Weiwei; Zhu, Chao; Wei, Xiangfei; Chen, Mingliang; Gao, Song; Qiu, Shengqiang; Gong, Youpin; Wu, Liqiong; Long, Mingsheng; Sun, Mengtao; Pan, Gebo; Liu, Liwei

    2013-01-01

    Mass production of reduced graphene oxide and graphene nanoplatelets has recently been achieved. However, a great challenge still remains in realizing large-quantity and high-quality production of large-size thin few-layer graphene (FLG). Here, we create a novel route to solve the issue by employing one-time-only interlayer catalytic exfoliation (ICE) of salt-intercalated graphite. The typical FLG with a large lateral size of tens of microns and a thickness less than 2 nm have been obtained by a mild and durative ICE. The high-quality graphene layers preserve intact basal crystal planes owing to avoidance of the degradation reaction during both intercalation and ICE. Furthermore, we reveal that the high-quality FLG ensures a remarkable lithium-storage stability (>1,000 cycles) and a large reversible specific capacity (>600 mAh g-1). This simple and scalable technique acquiring high-quality FLG offers considerable potential for future realistic applications.

  19. Electronic properties of impurity-infected few-layer graphene nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Mousavi, Hamze, E-mail: hamze.mousavi@gmail.com [Department of Physics, Razi University, Kermanshah (Iran, Islamic Republic of); Nano Science and Nano Technology Research Center, Razi University, Kermanshah (Iran, Islamic Republic of); Bagheri, Mehran [Laser and Plasma Research Institute, Shahid Beheshti University, G.C., Evin, Tehran 19835-63113 (Iran, Islamic Republic of)

    2015-02-01

    Spurred by achievements in devising different multilayered graphene-based nano-systems, based on the random tight-binding Hamiltonian model and within the coherent potential approximation, the influence of varying the number of layers and the effect of doping by the boron and nitrogen impurities on the density of states of a mono- and few-layer armchair- and zigzag-edge graphene nanoribbons are theoretically investigated. When the nanoribbons are pristine, with increasing the number of layers the band gap of the armchair nanoribbons is decreased, yet the zigzag ribbons remain metallic and depending on the number of the layers few peaks are appeared around the zero-energy level. Moreover, in the presence of impurities, the band gap of the armchair nanoribbons is decreased for each number of layers. The Van-Hove singularities are steadily broadened and the density of states move to a higher (lower) value of the energy as a result of doping with boron (nitrogen) atoms. This study could provide with us to explore and devise new optoelectronic devices based on the impurity-infected graphene nanoribbons with tunable widths and edges.

  20. Tribological characteristics of few-layer graphene over Ni grain and interface boundaries.

    Science.gov (United States)

    Tripathi, Manoj; Awaja, Firas; Paolicelli, Guido; Bartali, Ruben; Iacob, Erica; Valeri, Sergio; Ryu, Seunghwa; Signetti, Stefano; Speranza, Giorgio; Pugno, Nicola Maria

    2016-03-28

    The tribological properties of metal-supported few-layered graphene depend strongly on the grain topology of the metal substrate. Inhomogeneous distribution of graphene layers at such regions led to variable landscapes with distinguishable roughness. This discrepancy in morphology significantly affects the frictional and wetting characteristics of the FLG system. We discretely measured friction characteristics of FLG covering grains and interfacial grain boundaries of polycrystalline Ni metal substrate via an atomic force microscopy (AFM) probe. The friction coefficient of FLG covered at interfacial grain boundaries is found to be lower than that on grains in vacuum (at 10(-5) Torr pressure) and similar results were obtained in air condition. Sliding history with AFM cantilever, static and dynamic pull-in and pull-off adhesion forces were addressed in the course of friction measurements to explain the role of the out-of-plane deformation of graphene layer(s). Finite element simulations showed good agreement with experiments and led to a rationalization of the observations. Thus, with interfacial grain boundaries the FLG tribology can be effectively tuned.

  1. Mono- to few-layered graphene oxide embedded randomness assisted microcavity amplified spontaneous emission source

    Science.gov (United States)

    Das, Pratyusha; Maiti, Rishi; Barman, Prahalad K.; Ray, Samit K.; Shivakiran, Bhaktha B. N.

    2016-02-01

    The realization of optoelectronic devices using two-dimensional materials such as graphene and its intermediate product graphene oxide (GO) is extremely challenging owing to the zero band gap of the former. Here, a novel amplified spontaneous emission (ASE) system based on a GO-embedded all-dielectric one-dimensional photonic crystal (1DPhC) micro-resonator is presented. The mono- to few-layered GO sheet is inserted within a microcavity formed by two 5-bilayered SiO2/SnO2 Bragg reflectors. Significantly enhanced photoluminescence (PL) emission of GO embedded in 1DPhC is explicated by studying the electric field confined within the micro-resonator using the transfer matrix method. The inherent randomness, due to fabrication limitations, in the on-average periodic 1DPhC is exploited to further enhance the PL of the optically active micro-resonator. The 1DPhC and randomness assisted field confinement reduces the ASE threshold of the mono- to few-layered weak emitter making the realization of an ASE source feasible. Consequently, ASE at the microcavity resonance and at the low-frequency band-edge of photonic stop-band is demonstrated. Variation of the detection angle from 5° to 30°, with respect to the sample surface normal allows reallocation of the defect mode ASE peak over a spectral range of 558-542 nm, making the GO-incorporated 1DPhC a novel and attractive system for integrated optic applications.

  2. Chemical modification of epitaxial graphene: spontaneous grafting of aryl groups.

    Science.gov (United States)

    Bekyarova, Elena; Itkis, Mikhail E; Ramesh, Palanisamy; Berger, Claire; Sprinkle, Michael; de Heer, Walt A; Haddon, Robert C

    2009-02-04

    The addition of nitrophenyl groups to the surface of few-layer epitaxial graphene (EG) by the formation of covalent carbon-carbon bonds changed the electronic structure and transport properties of the EG from near-metallic to semiconducting.

  3. Comparison of Electronic Structure and Magnetic Properties of Few Layer Graphene and Multiwall Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Sekhar Chandra Ray

    2016-01-01

    Full Text Available A comparative study has been made for the non-catalyst based few layer graphene (FLG and Fe-catalyst based multiwall carbon nanotubes (MWCNTs. Magnetic and electronic properties of FLG and MWCNTs were studied using magnetic M-H hysteresis loops and synchrotron radiation based X-ray absorption fine structure spectroscopy measurements. Structural defects and electronic and bonding properties of FLG/MWCNTs have been studied using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS, and ultraviolet photoelectron spectroscopy (UPS. The work functions of FLG and MWCNTs are 4.01 eV and 3.79 eV, respectively, obtained from UPS (He-I spectra. UPS (He-II results suggest that the density of states (DOS of MWCNTs is higher than FLG and is consistent with Raman spectroscopy result that shows the defect of MWCNTs is higher than FLG. The magnetic coercivity (Hc of the MWCNTs (~750 Oe is higher than FLG (~85 Oe which could be used for various technological magnetic applications.

  4. Hollow Few-Layer Graphene-Based Structures from Parafilm Waste for Flexible Transparent Supercapacitors and Oil Spill Cleanup.

    Science.gov (United States)

    Nguyen, Duc Dung; Hsieh, Ping-Yen; Tsai, Meng-Ting; Lee, Chi-Young; Tai, Nyan-Hwa; To, Bao Dong; Vu, Duc Tu; Hsu, Chia Chen

    2017-11-22

    We report a versatile strategy to exploit parafilm waste as a carbon precursor for fabrication of freestanding, hollow few-layer graphene fiber mesh (HFGM) structures without use of any gaseous carriers/promoters via an annealing route. The freestanding HFGMs possess good mechanical flexibility, tailorable transparency, and high electrical conductivity, consequently qualifying them as promising electrochemical electrodes. Because of the hollow spaces, electrolyte ions can easily access into and contact with interior surfaces of the graphene fibers, accordingly increasing electrode/electrolyte interfacial area. As expected, solid-state supercapacitors based on the HFGMs exhibit a considerable enhancement in specific capacitance (20-30 fold) as compared to those employing chemical vapor deposition compact graphene films. Moreover, the parafilm waste is found to be beneficial for one-step fabrication of nanocarbon/few-layer graphene composite meshes with superior electrochemical performance, outstanding superhydrophobic property, good self-cleaning ability, and great promise for oil spill cleanup.

  5. Gas phase condensation of few-layer graphene with rotational stacking faults in an electric-arc

    OpenAIRE

    Karmakar, Soumen; Nawale, Ashok B.; Lalla, Niranjan P.; Sathe, Vasant G.; Mathe, Vikas L.; Das, Asoka K.; Bhoraskar, Sudha V.

    2012-01-01

    We report the synthesis efficiency of few-layer graphene (FLG) in an external magnetic field modulated DC carbon arc in different non-reactive buffer gases. The effects of buffer gases on the anode erosion rate and the cathode deposit (CD) formation rate have been investigated during the synthesis of FLG. The constituents of the as-synthesized CDs were investigated using transmission electron microscopy, selected area electron diffraction, Raman spectroscopy and X-ray diffraction analysis. A ...

  6. Investigation of the two-gap superconductivity in a few-layer NbSe2-graphene heterojunction

    Science.gov (United States)

    Han, Tianyi; Shen, Junying; Yuan, Noah F. Q.; Lin, Jiangxiazi; Wu, Zefei; Wu, Yingying; Xu, Shuigang; An, Liheng; Long, Gen; Wang, Yuanwei; Lortz, Rolf; Wang, Ning

    2018-02-01

    We investigated the superconductivity in a few-layer NbSe2-graphene heterojunction by differential conductance spectroscopy. Because of the gate-tunable Fermi level of the few-layer graphene, used here as a tunneling electrode in a nano-point-contact spectroscopy setup, the differential conductance of the heterojunction showed highly sensitive dependence on the gate voltage, which allowed us to probe the nature of the superconducting gap functions with unprecedented detail by continuously tuning the transparency of the junction between the spectroscopic tunneling and the Andreev reflection limits. Characteristic features associated with a two-gap superconductivity in NbSe2 were reproducibly observed in both limits and between, e.g., in the form of a central conductance dip with two sets of coherence peaks when the Fermi level was close to the charge neutrality point of graphene. From fits with the Blonder-Tinkham-Klapwijk model, two gaps with their temperature dependence were extracted. The two gaps associated with the two-band superconductivity in NbSe2 followed the expected temperature behavior in the limit of weak interband scattering, with a gap to Tc ratio suggesting a weak to moderately strong coupling in few-layer systems.

  7. Exposure of few layer graphene to Limnodrilus hoffmeisteri modifies the graphene and changes its bioaccumulation by other organisms

    Science.gov (United States)

    Mao, Liang; Liu, Chuanling; Lu, Kun; Su, Yu; Gu, Cheng; Huang, Qingguo; Petersen, Elijah J.

    2017-01-01

    While graphene has substantial commercial promise, numerous aspects regarding its ecological effects such as its potential for bioaccumulation are not well known. 14C-labeled few layer graphene (FLG) was dispersed in artificial freshwater and uptake of FLG by Limnodrilus hoffmeisteri, an oligochaete, was assessed. After exposure for 36 h to a 1 mg/L FLG suspension, the FLG body burden in the organism was nearly 60 ng/mg (on a dry mass basis). Multiple characterization results confirmed that the proteins secreted by the organisms during the exposure period coated the FLG, thus increasing its stability and decreasing its size in suspension. Uptake behaviors of Eisenia foetida exposed to FLG and protein-coated FLG at concentrations of approximately 1 mg/kg or to Daphnia magna at 100 μg/L were also quantified. Protein-coated FLG demonstrated different bioaccumulation behaviors for both organisms compared to uncoated FLG, with the FLG body burden in E. foetida increased but that in D. magna reduced. The data provide the first evidence that the proteins secreted by Limnodrilus hoffmeisteri after exposure to FLG can coat FLG, thus increasing the aqueous stability of FLG, decreasing its size, and changing its bioaccumulation potential. PMID:28694548

  8. 3-D vertically aligned few layer graphene – partially reduced graphene oxide/sulfur electrodes for high performance lithium–sulfur batteries

    NARCIS (Netherlands)

    Singh, D. P.; Soin, N.; Sharma, S.; Basak, S.; Sachdeva, S.; Roy, S. S.; Zanderbergen, H. W.; McLaughlin, J. A.; Huijben, M.; Wagemaker, M.

    2017-01-01

    3-D vertically aligned few-layered graphene (FLGs) nanoflakes synthesised using microwave plasma enhanced chemical vapour deposition are melt-impregnated with partially reduced graphene oxide-sulfur (PrGO-S) nanocomposites for use in lithium–sulfur batteries. The aligned structure and the presence

  9. Facile Doping and Work-Function Modification of Few-Layer Graphene Using Molecular Oxidants and Reductants

    KAUST Repository

    Mansour, Ahmed

    2017-01-03

    Doping of graphene is a viable route toward enhancing its electrical conductivity and modulating its work function for a wide range of technological applications. In this work, the authors demonstrate facile, solution-based, noncovalent surface doping of few-layer graphene (FLG) using a series of molecular metal-organic and organic species of varying n- and p-type doping strengths. In doing so, the authors tune the electronic, optical, and transport properties of FLG. The authors modulate the work function of graphene over a range of 2.4 eV (from 2.9 to 5.3 eV)-unprecedented for solution-based doping-via surface electron transfer. A substantial improvement of the conductivity of FLG is attributed to increasing carrier density, slightly offset by a minor reduction of mobility via Coulomb scattering. The mobility of single layer graphene has been reported to decrease significantly more via similar surface doping than FLG, which has the ability to screen buried layers. The dopant dosage influences the properties of FLG and reveals an optimal window of dopant coverage for the best transport properties, wherein dopant molecules aggregate into small and isolated clusters on the surface of FLG. This study shows how soluble molecular dopants can easily and effectively tune the work function and improve the optoelectronic properties of graphene.

  10. Highly ordered mesoporous few-layer graphene frameworks enabled by fe3 o4 nanocrystal superlattices.

    Science.gov (United States)

    Jiao, Yucong; Han, Dandan; Liu, Limin; Ji, Li; Guo, Guannan; Hu, Jianhua; Yang, Dong; Dong, Angang

    2015-05-04

    While great progress has been achieved in the synthesis of ordered mesoporous carbons in the past decade, it still remains a challenge to prepare highly graphitic frameworks with ordered mesoporosity and high surface area. Reported herein is a simple synthetic methodology, based on the conversion of self-assembled superlattices of Fe3 O4 nanocrystals, to fabricate highly ordered mesoporous graphene frameworks (MGFs) with ultrathin pore walls consisting of three to six stacking graphene layers. The MGFs possess face-centered-cubic symmetry with interconnected mesoporosity, tunable pore width, and high surface area. Because of their unique architectures and superior structural durability, the MGFs exhibit excellent cycling stability and rate performance when used as anode materials for lithium-ion batteries, thus retaining a specific capacity of 520 mAh g(-1) at a current density of 300 mA g(-1) after 400 cycles. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Synthesis and Characterization of Mass Produced High Quality Few Layered Graphene Sheets via a Chemical Method

    KAUST Repository

    Khenfouch, Mohammed

    2014-04-01

    Graphene is a two-dimensional crystal of carbon atoms arranged in a honeycomb lattice. It is a zero band gap semimetal with very unique physical and chemical properties which make it useful for many applications such as ultra-high-speed field-effect transistors, p-n junction diodes, terahertz oscillators, and low-noise electronic, NEMS and sensors. When the high quality mass production of this nanomaterial is still a big challenge, we developed a process which will be an important step to achieve this goal. Atomic Force Microscopy, Scanning Electron Microscopy, Scanning tunneling microscopy, High Resolution Transmission Electron Microscopy, X-Ray Diffraction, Raman spectroscopy, Energy Dispersive X-ray system were investigated to characterize and examine the quality of this product.

  12. Physical defect formation in few layer graphene-like carbon on metals: influence of temperature, acidity, and chemical functionalization.

    Science.gov (United States)

    Schumacher, Christoph M; Grass, Robert N; Rossier, Michael; Athanassiou, Evagelos K; Stark, Wendelin J

    2012-03-06

    A systematical examination of the chemical stability of cobalt metal nanomagnets with a graphene-like carbon coating is used to study the otherwise rather elusive formation of nanometer-sized physical defects in few layer graphene as a result of acid treatments. We therefore first exposed the core-shell nanomaterial to well-controlled solutions of altering acidity and temperature. The release of cobalt into these solutions over time offered a simple tool to monitor the progress of particle degradation. The results suggested that the oxidative damage of the graphene-like coatings was the rate-limiting step during particle degradation since only fully intact or entirely emptied carbon shells were found after the experiments. If ionic noble metal species were additionally present in the acidic solutions, the noble metal was found to reduce on the surface of specific, defective particles. The altered electrochemical gradients across the carbon shells were however not found to lead to a faster release of cobalt from the particles. The suggested mechanistic insight was further confirmed by the covalent chemical functionalization of the particle surface with chemically inert aryl species, which leads to an additional thickening of the shells. This leads to reduced cobalt release rates as well as slower noble metal reduction rates depending on the augmentation of the shell thickness.

  13. Free-standing few-layered graphene oxide films: selective, steady and lasting permeation of organic molecules with adjustable speeds

    Science.gov (United States)

    Huang, Tao; An, Qi; Luan, Xinglong; Zhang, Qian; Zhang, Yihe

    2016-01-01

    A variety of small molecules with diameters around 1 nm possess a range of functions, such as antibiotic, antimicrobic, anticoagulant, pesticidal and chemotherapy effects, making these molecules especially useful in various applications ranging from medical treatment to environmental microbiological control. However, the long-term steady delivery (release or permeation) of these small molecules with adjustable and controllable speeds has remained an especially challenging task. In this study, we prepared covalently cross-linked free-standing few-layered GO films using a layer-by-layer technique in combination with photochemical cross-linkages, and achieved a controlled release of positively charged, negatively charged, and zwitterionic small molecules with adjustable and controllable speeds. The steady delivery of the small molecule lasted up to 9 days. Other functionalities, such as graphene-enhanced Raman spectra and electrochemical properties that could also be integrated or employed in delivery systems, were also studied for our films. We expect the special molecular delivery properties of our films to lead to new possibilities in drug/fertilizer delivery and environmental microbiological control applications.A variety of small molecules with diameters around 1 nm possess a range of functions, such as antibiotic, antimicrobic, anticoagulant, pesticidal and chemotherapy effects, making these molecules especially useful in various applications ranging from medical treatment to environmental microbiological control. However, the long-term steady delivery (release or permeation) of these small molecules with adjustable and controllable speeds has remained an especially challenging task. In this study, we prepared covalently cross-linked free-standing few-layered GO films using a layer-by-layer technique in combination with photochemical cross-linkages, and achieved a controlled release of positively charged, negatively charged, and zwitterionic small molecules with

  14. Passively mode-locked fiber laser based on a hollow-core photonic crystal fiber filled with few-layered graphene oxide solution.

    Science.gov (United States)

    Liu, Zhi-Bo; He, Xiaoying; Wang, D N

    2011-08-15

    We demonstrate a nanosecond-pulse erbium-doped fiber laser that is passively mode locked by a hollow-core photonic crystal fiber filled with few-layered graphene oxide solution. Owing to the good solution processing capability of few-layered graphene oxide, which can be filled into the core of a hollow-core photonic crystal fiber through a selective hole filling process, a graphene saturable absorber can be successfully fabricated. The output pulses obtained have a center wavelength, pulse width, and repetition rate of 1561.2 nm, 4.85 ns, and 7.68 MHz, respectively. This method provides a simple and efficient approach to integrate the graphene into the optical fiber system. © 2011 Optical Society of America

  15. Vanadium Oxyfluoride/Few-Layer Graphene Composite as a High-Performance Cathode Material for Lithium Batteries.

    Science.gov (United States)

    Cambaz, Musa Ali; Vinayan, B P; Clemens, Oliver; Munnangi, Anji Reddy; Chakravadhanula, Venkata Sai Kiran; Kübel, Christian; Fichtner, Maximilian

    2016-04-18

    Metal oxyfluoride compounds are gathering significant interest as cathode materials for lithium ion batteries at the moment because of their high theoretical capacity and resulting high energy density. In this regard, a new and direct approach is presented to synthesize phase-pure vanadium oxyfluoride (VO2F). The structure of VO2F was identified by Rietveld refinement of the powder X-ray diffraction (XRD) pattern. It crystallizes in a perovskite-type structure with disorder of the oxide and fluoride ions. The as-synthesized VO2F was tested as a cathode material for lithium ion batteries after being surface-coated with few-layer graphene. The VO2F delivered a first discharge capacity of 254 mA h g(-1) and a reversible capacity of 208 mA h g(-1) at a rate of C/20 for the first 20 cycles with an average discharge voltage of 2.84 V, yielding an energy density of 591 W h kg(-1). Improved rate capability that outperforms the previous report has been achieved, showing a discharge capacity of 150 mA h g(-1) for 1 C. The structural changes during lithium insertion and extraction were monitored by ex-situ XRD analysis of the electrodes discharged and charged to various stages. Lithium insertion results in an irreversible structural change of the anion lattice from (3)/4 cubic close packing to hexagonal close packing to accommodate the inserted lithium ions while keeping the overall space-group symmetry. For the first time we have revealed a structural change for the ReO3-type structure of as-prepared VO2F to the RhF3 structure after lithiation/delithiation, with structural changes that have not been observed in previous reports. Furthermore, the new synthetic approach described here would be a platform for the synthesis of new oxyfluoride compounds.

  16. Real-time fiber-optic anemometer based on a laser-heated few-layer graphene in an aligned graded-index fiber.

    Science.gov (United States)

    Gao, Ran; Lu, Danfeng; Cheng, Jin; Qi, Zhi-Mei

    2017-07-15

    A real-time all-fiber anemometer based on laser-heated few-layer graphene in aligned graded-index fibers has been proposed and experimentally demonstrated. The proposed fiber-optic anemometer was composed of a pair of all-fiber collimators by using aligned graded-index fibers that was coated with the few-layer graphene. The few-layer graphene was heated through a heating light from a 532-nm laser, which changed the optical transmittance of signal light with the wavelength of 1550 nm. The wind speed can be measured through the transmission power of the signal light based on the wind cooling effects on the heated few-layer graphene, acting as a "hot-wire" anemometer. The experimental results show that the maximum sensitivity of the anemometer reaches -22.03  μW/(m/s), and a fast response time of as 0.064 s can be achieved. The proposed fiber sensor can be used for the real-time measurement of wind speed in the fields of environmental monitoring, oil exploration, oceanography research, etc.

  17. Plasmon-enhanced scattering and charge transfer in few-layer graphene interacting with buried printed 2D-pattern of silver nanoparticles

    Science.gov (United States)

    Carles, R.; Bayle, M.; Bonafos, C.

    2018-04-01

    Hybrid structures combing silver nanoparticles and few-layer graphene have been synthetized by combining low-energy ion beam synthesis and stencil techniques. A single plane of metallic nanoparticles plays the role of an embedded plasmonic enhancer located in dedicated areas at a controlled nanometer distance from deposited graphene layers. Optical imaging, reflectance and Raman scattering mapping are used to measure the enhancement of electronic and vibrational properties of these layers. In particular electronic Raman scattering is shown as notably efficient to analyze the optical transfer of charge carriers between the systems and the presence of intrinsic and extrinsic defects.

  18. Direct physical exfoliation of few-layer graphene from graphite grown on a nickel foil using polydimethylsiloxane with tunable elasticity and adhesion.

    Science.gov (United States)

    Yoo, Kwanghyun; Takei, Yusuke; Kim, Sungjin; Chiashi, Shohei; Maruyama, Shigeo; Matsumoto, Kiyoshi; Shimoyama, Isao

    2013-05-24

    We firstly introduce a facile method for the site-specific direct physical exfoliation of few-layer graphene sheets from cheap and easily enlargeable graphite grown on a Ni foil using an optimized polydimethylsiloxane (PDMS) stamp. By decreasing the PDMS cross-linking time, the PDMS elasticity is reduced to ∼52 kPa, similar to that of a typical gel. As a result of this process, the PDMS becomes more flexible yet remains in a handleable state as a stamp. Furthermore, the PDMS adhesion to a graphite/Ni surface, as measured by the peel strength, increases to ∼5.1 N m⁻¹, which is approximately 17 times greater than that of typical PDMS. These optimized properties allow the PDMS stamp to have improved contact with the graphite/Ni surface, including the graphite wrinkles. This process is verified, and changes in surface morphology are observed using a 3D laser scanning microscope. Under conformal contact, the optimized PDMS stamp demonstrates the site-specific direct physical exfoliation of few-layer graphene sheets including mono- and bi-layer graphene sheets from the graphite/Ni substrate without the use of special equipment, conditions or chemicals. The number of layers of the exfoliated graphene and its high quality are revealed by the measured Raman spectroscopy. The exfoliation method using tunable elasticity and adhesion of the PDMS stamp can be used not only for cost-effective mass production of defect-less few-layer graphene from the graphite substrate for micro/nano device arrays but also for nano-contact printing of various structures, devices and cells.

  19. 3D-copper oxide and copper oxide/few-layer graphene with screen printed nanosheet assembly for ultrasensitive non-enzymatic glucose sensing

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Zhimei [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin, 300384 (China); Advanced Materials and Printed Electronics Center, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin, 300384 (China); Pan, Peng, E-mail: panpeny@163.com [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin, 300384 (China); Advanced Materials and Printed Electronics Center, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin, 300384 (China); Liu, Xuewen [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin, 300384 (China); Advanced Materials and Printed Electronics Center, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin, 300384 (China); Yang, Zhengchun; Wei, Jun [Advanced Materials and Printed Electronics Center, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin, 300384 (China); Wei, Zhen, E-mail: weizhenxinxi@163.com [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin, 300384 (China); Advanced Materials and Printed Electronics Center, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin, 300384 (China)

    2017-02-01

    Screen-printed copper oxide (CuO) and CuO/few-layer graphene on graphite electrodes were used to fabricate the ultrasensitive nonenzymatic glucose biosensors. Flower-like CuO and flower-like CuO/few-layer graphene composites were prepared by screen-printing method and characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), and high-resolution transmission electron microscopy (HETEM). On the basis of their cyclic voltammetry (CV) and chronoamperometry results, it was concluded that the addition of graphene to CuO significantly improved the performance of the fabricated glucose sensors, exhibiting high and reproducible sensitivity of 3120 μAmM{sup −1} cm{sup −2} with three linear ranges from 4 μM to 13.5 mM and the detection limit of 4 μM (S/N = 3) in a fast response time of 2 s. In addition, the fabricated sensors could effectively avoid the disturbance by interferents, such as Ascorbic Acid (AA), Uric Acid (UA), and Dopamine (DA). Most importantly, the testing results of real blood serum samples demonstrated that the electrodes were applicable and acceptable for the determination of glucose concentrations in human serum. The efficiencies of two non-enzymatic glucose biosensors for glucose determination were comparable with that of a commercial enzymatic sensor. - Highlights: • The method 2D nanosheet turns to 3D microflower by using screen printing was proposed. • Few-layer graphene added improved the sensor’s performance on base of CuO functional material. • Two ultrasensitive non-enzymatic glucose sensors were successfully fabricated. • The proposed sensor shows a high sensitivity of 3120 μA mM{sup −1} cm{sup −2}.

  20. Epitaxial graphene electronic structure and transport

    International Nuclear Information System (INIS)

    De Heer, Walt A; Berger, Claire; Wu Xiaosong; Sprinkle, Mike; Hu Yike; Ruan Ming; First, Phillip N; Stroscio, Joseph A; Haddon, Robert; Piot, Benjamin; Faugeras, Clement; Potemski, Marek; Moon, Jeong-Sun

    2010-01-01

    Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective is presented and the unique electronic properties of single and multilayered epitaxial graphenes on electronics grade silicon carbide are reviewed. Early results on transport and the field effect in Si-face grown graphene monolayers provided proof-of-principle demonstrations. Besides monolayer epitaxial graphene, attention is given to C-face grown multilayer graphene, which consists of electronically decoupled graphene sheets. Production, structure and electronic structure are reviewed. The electronic properties, interrogated using a wide variety of surface, electrical and optical probes, are discussed. An overview is given of recent developments of several device prototypes including resistance standards based on epitaxial graphene quantum Hall devices and new ultrahigh frequency analogue epitaxial graphene amplifiers.

  1. Epitaxial graphene electronic structure and transport

    Energy Technology Data Exchange (ETDEWEB)

    De Heer, Walt A; Berger, Claire; Wu Xiaosong; Sprinkle, Mike; Hu Yike; Ruan Ming; First, Phillip N [School of Physics, Georgia Institute of Technology, Atlanta, GA 30332 (United States); Stroscio, Joseph A [Center for Nanoscale Science and Technology, NIST, Gaithersburg, MD 20899 (United States); Haddon, Robert [Center for Nanoscale Science and Engineering, Departments of Chemistry and Chemical and Environmental Engineering, University of California, Riverside, CA 92521 (United States); Piot, Benjamin; Faugeras, Clement; Potemski, Marek [LNCMI -CNRS, Grenoble, 38042 Cedex 9 (France); Moon, Jeong-Sun, E-mail: walt.deheer@physics.gateh.ed [HRL Laboratories LLC, Malibu, CA 90265 (United States)

    2010-09-22

    Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective is presented and the unique electronic properties of single and multilayered epitaxial graphenes on electronics grade silicon carbide are reviewed. Early results on transport and the field effect in Si-face grown graphene monolayers provided proof-of-principle demonstrations. Besides monolayer epitaxial graphene, attention is given to C-face grown multilayer graphene, which consists of electronically decoupled graphene sheets. Production, structure and electronic structure are reviewed. The electronic properties, interrogated using a wide variety of surface, electrical and optical probes, are discussed. An overview is given of recent developments of several device prototypes including resistance standards based on epitaxial graphene quantum Hall devices and new ultrahigh frequency analogue epitaxial graphene amplifiers.

  2. Saturated evanescent-wave absorption of few-layer graphene-covered side-polished single-mode fiber for all-optical switching

    Science.gov (United States)

    Peng, Kaung-Jay; Wu, Chun-Lung; Lin, Yung-Hsiang; Wang, Hwai-Yung; Cheng, Chih-Hsien; Chi, Yu-Chieh; Lin, Gong-Ru

    2018-01-01

    Using the evanescent-wave saturation effect of hydrogen-free low-temperature synthesized few-layer graphene covered on the cladding region of a side-polished single-mode fiber, a blue pump/infrared probe-based all-optical switch is demonstrated with specific wavelength-dependent probe modulation efficiency. Under the illumination of a blue laser diode at 405 nm, the few-layer graphene exhibits cross-gain modulation at different wavelengths covering the C- and L-bands. At a probe power of 0.5 mW, the L-band switching throughput power variant of 16 μW results in a probe modulation depth of 3.2%. Blue shifting the probe wavelength from 1580 to 1520 nm further enlarges the switching throughput power variant to 24 mW and enhances the probe modulation depth to 5%. Enlarging the probe power from 0.5 to 1 mW further enlarges the switching throughput power variant from 25 to 58 μW to promote its probe modulation depth of up to 5.8% at 1520 nm. In contrast, the probe modulation depth degrades from 5.1% to 1.2% as the pumping power reduces from 85 to 24 mW, which is attributed to the saturable absorption of the few-layer graphene-based evanescent-wave absorber. The modulation depth at wavelength of 1550 nm under a probe power of 1 mW increases from 1.2% to 5.1%, as more carriers can be excited when increasing the blue laser power from 24 to 85 mW, whereas it decreases from 5.1% to 3.3% by increasing the input probe power from 1 to 2 mW to show an easier saturated condition at longer wavelength.

  3. Supercritical diethylamine facilitated loading of ultrafine Ru particles on few-layer graphene for solvent-free hydrogenation of levulinic acid to γ-valerolactone

    Science.gov (United States)

    Tao, Hengcong; Ding, Jingjing; Xie, Chao; Gao, Yunnan; Song, Jinliang; Sun, Zhenyu

    2018-02-01

    We demonstrate a facile and versatile method to grow Ru particles uniformly on pristine few-layer graphene (FLG) in supercritical diethylamine. In particular, a large number of Ru subnanometer clusters less than 1.0 nm were observed. The particle size can be tuned by manipulating the loading content of Ru and controlling the reaction temperature. The resulting Ru/FLG showed remarkably high activity, selectivity, and reusability towards the hydrogenation of levulinic acid to γ-valerolactone. This method is flexible, and can be extended to the synthesis of a variety of other ultrafine metal particles supported on FLG.

  4. Epitaxial-graphene/graphene-oxide junction: an essential step towards epitaxial graphene electronics.

    Science.gov (United States)

    Wu, Xiaosong; Sprinkle, Mike; Li, Xuebin; Ming, Fan; Berger, Claire; de Heer, Walt A

    2008-07-11

    Graphene-oxide (GO) flakes have been deposited to bridge the gap between two epitaxial-graphene electrodes to produce all-graphene devices. Electrical measurements indicate the presence of Schottky barriers at the graphene/graphene-oxide junctions, as a consequence of the band gap in GO. The barrier height is found to be about 0.7 eV, and is reduced after annealing at 180 degrees C, implying that the gap can be tuned by changing the degree of oxidation. A lower limit of the GO mobility was found to be 850 cm2/V s, rivaling silicon. In situ local oxidation of patterned epitaxial graphene has been achieved.

  5. Facile and large-scale synthesis of high quality few-layered graphene nano-platelets via methane decomposition over unsupported iron family catalysts

    Energy Technology Data Exchange (ETDEWEB)

    Awadallah, Ahmed E., E-mail: ahmedelsayed_epri@yahoo.com [Process Development Division, Egyptian Petroleum Research Institute, 11727 Cairo (Egypt); Aboul-Enein, Ateyya A. [Process Development Division, Egyptian Petroleum Research Institute, 11727 Cairo (Egypt); Kandil, Usama F. [Petroleum Application Department, Egyptian Petroleum Research Institute, 11727 Cairo (Egypt); Taha, Mahmoud Reda [Department of Civil Engineering, University of New Mexico, Albuquerque, NM 87131 (United States)

    2017-04-15

    High quality few-layered graphene nano-platelets (GNPs) were successfully prepared via catalytic chemical vapor deposition of methane under ambient pressure using substrate-free unsupported iron, cobalt, and nickel metallic sheets as catalysts. The bulk catalysts were prepared via combustion method using citric acid as a fuel. Various analytical techniques, including high-resolution transmission electron microscopy (TEM), X-ray diffraction (XRD), thermogravimetric analysis (TGA), temperature programmed reduction (TPR) and Raman spectroscopy were employed to characterize the fresh and reduced catalysts and to identify the morphological structure of the as-grown GNPs. TEM images of the reduced metal catalysts showed that polycrystalline metallic sheets were easily produced after complete reduction of unsupported metal oxides. The data demonstrated that the formation of zero-valent metallic sheets could effectively promote the growth of GNPs on their surfaces. The unsupported Ni catalyst exhibits higher catalytic growth activity in terms of GNPs yield (254 wt%) compared with all other catalysts. Raman spectra and TEM results established that a few layers of GNPs with high crystallinity and good graphitization were produced. TGA results further demonstrated that the as-grown GNPs exhibit significantly higher thermal stability in air atmosphere compared with other synthesis methods. - Highlights: • Few-layered graphene nanoplatelets were prepared via methane catalytic decomposition. • Metallic sheets of iron group metals were used as novel catalysts. • The surfaces of metallic sheets were found to be very effective for GNPs growth. • The number of layers is dependent on the morphological structure of the catalysts. • The unsupported metallic Ni catalyst exhibited higher catalytic growth activity.

  6. Facile and large-scale synthesis of high quality few-layered graphene nano-platelets via methane decomposition over unsupported iron family catalysts

    International Nuclear Information System (INIS)

    Awadallah, Ahmed E.; Aboul-Enein, Ateyya A.; Kandil, Usama F.; Taha, Mahmoud Reda

    2017-01-01

    High quality few-layered graphene nano-platelets (GNPs) were successfully prepared via catalytic chemical vapor deposition of methane under ambient pressure using substrate-free unsupported iron, cobalt, and nickel metallic sheets as catalysts. The bulk catalysts were prepared via combustion method using citric acid as a fuel. Various analytical techniques, including high-resolution transmission electron microscopy (TEM), X-ray diffraction (XRD), thermogravimetric analysis (TGA), temperature programmed reduction (TPR) and Raman spectroscopy were employed to characterize the fresh and reduced catalysts and to identify the morphological structure of the as-grown GNPs. TEM images of the reduced metal catalysts showed that polycrystalline metallic sheets were easily produced after complete reduction of unsupported metal oxides. The data demonstrated that the formation of zero-valent metallic sheets could effectively promote the growth of GNPs on their surfaces. The unsupported Ni catalyst exhibits higher catalytic growth activity in terms of GNPs yield (254 wt%) compared with all other catalysts. Raman spectra and TEM results established that a few layers of GNPs with high crystallinity and good graphitization were produced. TGA results further demonstrated that the as-grown GNPs exhibit significantly higher thermal stability in air atmosphere compared with other synthesis methods. - Highlights: • Few-layered graphene nanoplatelets were prepared via methane catalytic decomposition. • Metallic sheets of iron group metals were used as novel catalysts. • The surfaces of metallic sheets were found to be very effective for GNPs growth. • The number of layers is dependent on the morphological structure of the catalysts. • The unsupported metallic Ni catalyst exhibited higher catalytic growth activity.

  7. The novel synthesis of highly water-soluble few-layer graphene nanosheets by a simple one-pot chemical route and without any modification

    Energy Technology Data Exchange (ETDEWEB)

    Tadjarodi, Azadeh, E-mail: tajarodi@iust.ac.ir; Ferdowsi, Somayeh Moazen

    2016-11-01

    In this study, a simple one-pot and scalable process including mild oxidation of graphite in mixture of H{sub 2}SO{sub 4}/KMnO{sub 4} at 60 °C was developed to synthesize water-soluble graphene. In this process, effects of the oxidant amount and reaction time on oxidation and exfoliation degree of graphite were explored. At this temperature, most oxygen-containing functional groups were introduced at the edges of graphite by preserving the pristine sp{sup 2}carbon-bonded structure. These functional groups were responsible for exfoliation of edge-functionalized graphite (EFG) sheets to edge-graphene oxide (EGO). Various techniques including atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman and Fourier transform infrared (FT-IR) spectroscopy, X-ray photoelectron spectroscopy (XPS), X-ray diffraction pattern (XRD) and direct-current measurements proved that resulting EGO was formed from few-layer graphene nanosheets (GNS) with sub-2 nm thickness, low-defect sites in basal plane owing good solubility in water from pH 6 to 11 through electrostatic stabilization, as determined by zeta-potentiometry. This low-cost and high-efficiency solution processing techniques has enabled to produce aqueous graphene dispersions without need to use polymeric or surfactant stabilizers for many technological applications. - Highlights: • Water-soluble graphene was synthesized by a simple one-pot and scalable process. • This process did not utilize any reduction agents, stabilizer and ultrasonication. • The effects of oxidant amount and reaction time on process were explored.

  8. Degradation of (14)C-labeled few layer graphene via Fenton reaction: Reaction rates, characterization of reaction products, and potential ecological effects.

    Science.gov (United States)

    Feng, Yiping; Lu, Kun; Mao, Liang; Guo, Xiangke; Gao, Shixiang; Petersen, Elijah J

    2015-11-01

    Graphene has attracted considerable commercial interest due to its numerous potential applications. It is inevitable that graphene will be released into the environment during the production and usage of graphene-enabled consumer products, but the potential transformations of graphene in the environment are not well understood. In this study, (14)C-labeled few layer graphene (FLG) enabled quantitative measurements of FLG degradation rates induced by the iron/hydrogen peroxide induced Fenton reaction. Quantification of (14)CO2 production from (14)C-labeled FLG revealed significant degradation of FLG after 3 days with high H2O2 (200 mmol L(-1)) and iron (100 μmol L(-1)) concentrations but substantially lower rates under environmentally relevant conditions (0.2-20 mmol L(-1) H2O2 and 4 μmol L(-1) Fe(3+)). Importantly, the carbon-14 labeling technique allowed for quantification of the FLG degradation rate at concentrations nearly four orders of magnitude lower than those typically used in other studies. These measurements revealed substantially faster degradation rates at lower FLG concentrations and thus studies with higher FLG concentrations may underestimate the degradation rates. Analysis of structural changes to FLG using multiple orthogonal methods revealed significant FLG oxidation and multiple reaction byproducts. Lastly, assessment of accumulation of the degraded FLG and intermediates using aquatic organism Daphnia magna revealed substantially decreased body burdens, which implied that the changes to FLG caused by the Fenton reaction may dramatically impact its potential ecological effects. Copyright © 2015 Elsevier Ltd. All rights reserved.

  9. Sulfur and nitrogen co-doped, few-layered graphene oxide as a highly efficient electrocatalyst for the oxygen-reduction reaction.

    Science.gov (United States)

    Xu, Jiaoxing; Dong, Guofa; Jin, Chuanhong; Huang, Meihua; Guan, Lunhui

    2013-03-01

    S and N co-doped, few-layered graphene oxide is synthesized by using pyrimidine and thiophene as precursors for the application of the oxygen reduction reaction (ORR). The dual-doped catalyst with pyrrolic/graphitic N-dominant structures exhibits competitive catalytic activity (10.0 mA cm(-2) kinetic-limiting current density at -0.25 V) that is superior to that for mono N-doped carbon nanomaterials. This is because of a synergetic effect of N and S co-doping. Furthermore, the dual-doped catalyst also shows an efficient four-electron-dominant ORR process, which has excellent methanol tolerance and improved durability in comparison to commercial Pt/C catalysts. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. New functional nanocomposites based on poly(trimethylene 2,5-furanoate and few layer graphene prepared by in situ polymerization

    Directory of Open Access Journals (Sweden)

    S. Paszkiewicz

    2018-06-01

    Full Text Available Poly(trimethylene 2,5-furanoate (PTF nanocomposites reinforced with few layer graphene (FLG were prepared through in situ polymerization. The method in question allows obtaining well-dispersed nanoplatelets in the whole volume of PTF matrix. The mechanical properties of the PTF/FLG nanocomposites slightly increased with as quantity of FLG as small as 0.1 wt%, which was best seen in the improvement of elongation at break by about two times. The presence of FLG did not affect the crystallization and chain mobility of PTF matrix. However, the incorporation of a small quantity of FLG slightly improved the thermal stability of the nanocomposites. Additionally, the cold and hot water absorption and oxygen permittivity measurements confirmed that FLG affected the tortuosity of the diffusive path for the penetrant molecule. Moreover, along with a successive addition of FLG a linear increase in thermal conductivity was visible.

  11. Spin transport in epitaxial graphene

    Science.gov (United States)

    Tbd, -

    2014-03-01

    Spintronics is a paradigm focusing on spin as the information vector in fast and ultra-low-power non volatile devices such as the new STT-MRAM. Beyond its widely distributed application in data storage it aims at providing more complex architectures and a powerful beyond CMOS solution for information processing. The recent discovery of graphene has opened novel exciting opportunities in terms of functionalities and performances for spintronics devices. We will present experimental results allowing us to assess the potential of graphene for spintronics. We will show that unprecedented highly efficient spin information transport can occur in epitaxial graphene leading to large spin signals and macroscopic spin diffusion lengths (~ 100 microns), a key enabler for the advent of envisioned beyond-CMOS spin-based logic architectures. We will also show that how the device behavior is well explained within the framework of the Valet-Fert drift-diffusion equations. Furthermore, we will show that a thin graphene passivation layer can prevent the oxidation of a ferromagnet, enabling its use in novel humide/ambient low-cost processes for spintronics devices, while keeping its highly surface sensitive spin current polarizer/analyzer behavior and adding new enhanced spin filtering property. These different experiments unveil promising uses of graphene for spintronics.

  12. Designing Two-Dimensional Dirac Heterointerfaces of Few-Layer Graphene and Tetradymite-Type Sb2Te3for Thermoelectric Applications.

    Science.gov (United States)

    Jang, Woosun; Lee, Jiwoo; In, Chihun; Choi, Hyunyong; Soon, Aloysius

    2017-12-06

    Despite the ubiquitous nature of the Peltier effect in low-dimensional thermoelectric devices, the influence of finite temperature on the electronic structure and transport in the Dirac heterointerfaces of the few-layer graphene and layered tetradymite, Sb 2 Te 3 (which coincidently have excellent thermoelectric properties) are not well understood. In this work, using the first-principles density-functional theory calculations, we investigate the detailed atomic and electronic structure of these Dirac heterointerfaces of graphene and Sb 2 Te 3 and further re-examine the effect of finite temperature on the electronic band structures using a phenomenological temperature-broadening model based on Fermi-Dirac statistics. We then proceed to understand the underlying charge redistribution process in this Dirac heterointerfaces and through solving the Boltzmann transport equation, we present the theoretical evidence of electron-hole asymmetry in its electrical conductivity as a consequence of this charge redistribution mechanism. We finally propose that the hexagonal-stacked Dirac heterointerfaces are useful as efficient p-n junction building blocks in the next-generation thermoelectric devices where the electron-hole asymmetry promotes the thermoelectric transport by "hot" excited charge carriers.

  13. Synthesis of Few-Layer, Large Area Hexagonal-Boron Nitride by Pulsed Laser Deposition (POSTPRINT)

    Science.gov (United States)

    2014-09-01

    electrons, and minimal sites for adsorbed surface impurities [7]. The use of exfoliated h BN as a substrate dielectric material in graphene devices has...by annealing at 1000 °C [16]. This also includes recent reports on the direct CVD growth of h BN on the surface of epitaxial graphene with an ammonia...AFRL-RX-WP-JA-2015-0050 SYNTHESIS OF FEW-LAYER, LARGE AREA HEXAGONAL-BORON NITRIDE BY PULSED LASER DEPOSITION (POSTPRINT) Nicholas R Glavin

  14. Effect of Few-Layered Graphene-Based CdO Nanocomposite-Enhanced Power Conversion Efficiency of Dye-Sensitized Solar Cell

    Science.gov (United States)

    Bykkam, Satish; Kalagadda, Bikshalu; Kalagadda, Venkateswara Rao; Ahmadipour, Mohsen; Chakra, Ch. Shilpa; Rajendar, V.

    2018-01-01

    A few-layered graphene (FLG)/cadmium oxide (CdO) nanocomposite was sucessfully prepared through ultrasonic-assisted synthesis. The morphology of FLG (1.0 wt.%, 2.0 wt.%, and 3.0 wt.%)/CdO nanocomposites were characterized using high-resolution transmission electron microscopy and field emission scanning electron microscopy techniques. The optical properties were studied with the help of UV-Vis diffuse reflectance spectroscopy and Raman spectroscopy, while the crystalline phases were analyzed using x-ray diffraction. The doctor blade method was used to deposit FLG/CdO nanocomposites on fluorine-doped tin oxide conductive glass substrates. The effect of FLG weight percentage (1.0 wt.%, 2.0 wt.%, and 3.0 wt.%) was studied on the power conversion efficiency of dye-sensitized solar cell applications. The photovoltaic characteristics, current density-voltage curves were measured with ruthenium (II)-based dye under air mass condition 1.5G, 100 m W m-2 of a solar simulator. The results showed that higher power conversion efficiency of 3.54% was achieved at the appropriate weight percentage of FLG (1.0 wt.%)/CdO nanocomposite, compared to the CdO and other nanocomposite working electrodes FLG (2.0 wt.%, and 3.0 wt.%)/CdO.

  15. Novel 2D Layered Molybdenum Ditelluride Encapsulated in Few-Layer Graphene as High-Performance Anode for Lithium-Ion Batteries.

    Science.gov (United States)

    Ma, Ning; Jiang, Xiao-Yu; Zhang, Lu; Wang, Xiao-Shuang; Cao, Yu-Liang; Zhang, Xian-Zheng

    2018-02-28

    Molybdenum ditelluride nanosheets encapsulated in few-layer graphene (MoTe 2 /FLG) are synthesized by a simple heating method using Te and Mo powder and subsequent ball milling with graphite. The as-prepared MoTe 2 /FLG nanocomposites as anode materials for lithium-ion batteries exhibit excellent electrochemical performance with a highly reversible capacity of 596.5 mAh g -1 at 100 mA g -1 , a high rate capability (334.5 mAh g -1 at 2 A g -1 ), and superior cycling stability (capacity retention of 99.5% over 400 cycles at 0.5 A g -1 ). Ex situ X-ray diffraction and transmission electron microscopy are used to explore the lithium storage mechanism of MoTe 2 . Moreover, the electrochemical performance of a MoTe 2 /FLG//0.35Li 2 MnO 3 ·0.65LiMn 0.5 Ni 0.5 O 2 full cell is investigated, which displays a reversible capacity of 499 mAh g -1 (based on the MoTe 2 /FLG mass) at 100 mA g -1 and a capacity retention of 78% over 50 cycles, suggesting the promising application of MoTe 2 /FLG for lithium-ion storage. First-principles calculations exhibit that the lowest diffusion barrier (0.18 eV) for lithium ions along pathway III in the MoTe 2 layered structure is beneficial for improving the Li intercalation/deintercalation property. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Epitaxial graphene: the material for graphene electronics

    Energy Technology Data Exchange (ETDEWEB)

    Sprinkle, M.; Soukiassian, P.; de Heer, W.A.; Berger, C.; Conrad, E.H.; (CEA); (GIT)

    2009-12-10

    The search for an ideal graphene sheet has been a quest driving graphene research. While most research has focused on exfoliated graphene, intrinsic substrate interactions and mechanical disorder have precluded the observation of a number of graphene's expected physical properties in this material. The only graphene candidate that has demonstrated all the essential properties of an ideal sheet is multilayer graphene grown on the SiC(000) surface. Its unique stacking allows nearly all the sheets in the stack to behave like isolated graphene, while the weak graphene-graphene interaction prevents any significant doping or distortion in the band near the Fermi level.

  17. New X-ray insight into oxygen intercalation in epitaxial graphene grown on 4H-SiC(0001)

    Energy Technology Data Exchange (ETDEWEB)

    Kowalski, G., E-mail: kowal@fuw.edu.pl; Tokarczyk, M. [Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw (Poland); Dąbrowski, P.; Ciepielewski, P.; Możdżonek, M.; Strupiński, W. [Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw (Poland); Baranowski, J. M. [Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw (Poland); Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw (Poland)

    2015-03-14

    Efficient control of intercalation of epitaxial graphene by specific elements is a way to change properties of the graphene. Results of several experimental techniques, such as X-ray photoelectron spectroscopy, micro-Raman mapping, reflectivity, attenuated total reflection, X-ray diffraction, and X-ray reflectometry, gave a new insight into the intercalation of oxygen in the epitaxial graphene grown on 4H-SiC(0001). These results confirmed that oxygen intercalation decouples the graphene buffer layer from the 4H-SiC surface and converts it into the graphene layer. However, in contrast to the hydrogen intercalation, oxygen does not intercalate between carbon planes (in the case of few layer graphene) and the interlayer spacing stays constant at the level of 3.35–3.32 Å. Moreover, X-ray reflectometry showed the presence of an oxide layer having the thickness of about 0.8 Å underneath the graphene layers. Apart from the formation of the nonuniform thin oxide layer, generation of defects in graphene caused by oxygen was also evidenced. Last but not least, water islands underneath defected graphene regions in both intercalated and non-intercalated samples were most probably revealed. These water islands are formed in the case of all the samples stored under ambient laboratory conditions. Water islands can be removed from underneath the few layer graphene stacks by relevant thermal treatment or by UV illumination.

  18. Energy loss and straggling of 1–50 keV H, He, C, N, and O ions passing through few layer graphene

    International Nuclear Information System (INIS)

    Allegrini, Frédéric; Bedworth, Peter; Ebert, Robert W.; Fuselier, Stephen A.; Nicolaou, Georgios; Sinton, Steve

    2015-01-01

    Highlights: • Evaluation of graphene foils for space plasma instruments. • Energy loss and straggling of keV ions passing through graphene foils. • Lower energy loss than for ultra-thin carbon foils. • Thickness non-uniformity leads to higher straggling. - Abstract: Graphene could be an alternative to amorphous carbon foils, in particular in space plasma instrumentation. The interaction of ions or neutral atoms with these foils results in different effects: electron emission, charge exchange, angular scattering, and energy straggling. We showed in previous studies that (1) the charge exchange properties are similar for graphene and regular carbon foils, and (2) the scattering at low energies (few keVs) is less for graphene than for one of our thinnest practical carbon foils. In this study, we report measurements of the energy loss and straggling of ∼1–50 keV H, He, C, N, and O ions in graphene. We compare graphene and a carbon foil for hydrogen. We provide simple power law fits to the average energy loss, energy straggling, and skewness of the energy distributions. We find the energy loss for ions transiting through graphene to be reduced compared to thin carbon foils but the energy straggling to be larger, which we attribute to the non-uniformity of the graphene foils used in this study

  19. Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene.

    Science.gov (United States)

    Fernández-Garrido, Sergio; Ramsteiner, Manfred; Gao, Guanhui; Galves, Lauren A; Sharma, Bharat; Corfdir, Pierre; Calabrese, Gabriele; de Souza Schiaber, Ziani; Pfüller, Carsten; Trampert, Achim; Lopes, João Marcelo J; Brandt, Oliver; Geelhaar, Lutz

    2017-09-13

    We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene layer structures synthesized on SiC. The different structures differ mainly in their total number of graphene layers. Because graphene is found to be etched under active N exposure, the direct growth of GaN nanowires on graphene is only achieved on multilayer graphene structures. The analysis of the nanowire ensembles prepared on multilayer graphene by Raman spectroscopy and transmission electron microscopy reveals the presence of graphene underneath as well as in between nanowires, as desired for the use of this material as contact layer in nanowire-based devices. The nanowires nucleate preferentially at step edges, are vertical, well aligned, epitaxial, and of comparable structural quality as similar structures fabricated on conventional substrates.

  20. Monitoring of epitaxial graphene anodization

    International Nuclear Information System (INIS)

    Vagin, Mikhail Yu.; Sekretaryova, Alina N.; Ivanov, Ivan G.; Håkansson, Anna; Iakimov, Tihomir; Syväjärvi, Mikael; Yakimova, Rositsa; Lundström, Ingemar; Eriksson, Mats

    2017-01-01

    Anodization of a graphene monolayer on silicon carbide was monitored with electrochemical impedance spectroscopy. Structural and functional changes of the material were observed by Raman spectroscopy and voltammetry. A 21 fold increase of the specific capacitance of graphene was observed during the anodization. An electrochemical kinetic study of the Fe(CN) 6 3−/4− redox couple showed a slow irreversible redox process at the pristine graphene, but after anodization the reaction rate increased by several orders of magnitude. On the other hand, the Ru(NH 3 ) 6 3+/2+ redox couple proved to be insensitive to the activation process. The results of the electron transfer kinetics correlate well with capacitance measurements. The Raman mapping results suggest that the increased specific capacitance of the anodized sample is likely due to a substantial increase of electron doping, induced by defect formation, in the monolayer upon anodization. The doping concentration increased from less than 1 × 10 13 of the pristine graphene to 4–8 × 10 13 of the anodized graphene.

  1. Simple fabrication of reduced graphene oxide -few layer MoS2 nanocomposite for enhanced electrochemical performance in supercapacitors and water purification

    Science.gov (United States)

    Raghu, M. S.; Yogesh Kumar, K.; Rao, Srilatha; Aravinda, T.; Sharma, S. C.; Prashanth, M. K.

    2018-05-01

    Expelling of heavy metal ions into water resource systems is extremely hazardous to the environment. Adsorption is one of the most cost effective and potential methods to remove the heavy metal ions from the effluents. Therefore, an attempt has been made to study the adsorption of metal particles of Cd and Hg from aqueous solution by using reduced graphene oxide-molybdenum disulphide (rGO-MoS2) nanocomposites as adsorbents. The rGO-MoS2 composites were synthesized by following simple physical methods; which involve the mixing of dispersions of MoS2 and graphene oxide (GO) by sonication, followed by subsequent reduction with hydrazine hydrate. Characterization of the nanocomposites was performed by FESEM, TEM, EDAX, raman spectroscopy, XRD and BET surface area analysis. Electron microscopic images validate the presence of homogeneity in the synthesized nanocomposite. Batch adsorption experiments were used to scrutinizethe effect of an array of parameters like effect of pH, initial concentration of the metal ions, adsorbent dose, and contact time on the adsorption capacity of metal ions on rGO-MoS2 nanocomposites. The thorough examination of adsorbed isotherm and energy demonstrates the best fitting of the adsorption data with the 'Langmuir adsorption isotherm model' and follows the pseudo-second-order kinetic in active condition. The synthesized materials havealso been tested against Gram-positive and Gram-negative bacterial strains and have showcased promising antimicrobial activities. At the same time, the nanocomposites were evaluated for electrochemical performance in supercapacitors. The rGO-MoS2 nanocomposite demonstrates better capacitance (440 Fg-1) at 5 mvs-1 scan rate. The inimitable surface property of MoS2 and good electrical conductivity of rGO results show versatile usage and formidable performance as an adsorbent, antibacterial agent and electrode material for supercapacitors.

  2. On the density of states of disordered epitaxial graphene

    International Nuclear Information System (INIS)

    Davydov, S. Yu.

    2015-01-01

    The study is concerned with two types of disordered epitaxial graphene: (i) graphene with randomly located carbon vacancies and (ii) structurally amorphous graphene. The former type is considered in the coherent potential approximation, and for the latter type, a model of the density of states is proposed. The effects of two types of substrates, specifically, metal and semiconductor substrates are taken into account. The specific features of the density of states of epitaxial graphene at the Dirac point and the edges of the continuous spectrum are analyzed. It is shown that vacancies in epitaxial graphene formed on the metal substrate bring about logarithmic nulling of the density of states of graphene at the Dirac point and the edges of the continuous spectrum. If the Dirac point corresponds to the middle of the band gap of the semiconductor substrate, the linear trend of the density of states to zero in the vicinity of the Dirac point in defect-free graphene transforms into a logarithmic decrease in the presence of vacancies. In both cases, the graphene-substrate interaction is assumed to be weak (quasi-free graphene). In the study of amorphous epitaxial graphene, a simple model of free amorphous graphene is proposed as the initial model, in which account is taken of the nonzero density of states at the Dirac point, and then the interaction of the graphene sheet with the substrate is taken into consideration. It is shown that, near the Dirac point, the quadratic behavior of the density of states of free amorphous graphene transforms into a linear dependence for amorphous epitaxial graphene. In the study, the density of states of free graphene corresponds to the low-energy approximation of the electron spectrum

  3. Graphene growth on h-BN by molecular beam epitaxy

    OpenAIRE

    García Martínez, Jorge Manuel; Pinczuk, Aron

    2013-01-01

    Graphene growth on dielectric substrates has potential to enable new kinds of devices and applications. We explore graphene growth via direct depositing carbon in a MBE environment on different dielectric substrates, such as h-BN and sapphire. The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated [1]. Formation of single-layer graphene is clearly apparent in Raman spectra which disp...

  4. On the kinetic barriers of graphene homo-epitaxy

    International Nuclear Information System (INIS)

    Zhang, Wei; Yu, Xinke; Xie, Ya-Hong; Cahyadi, Erica; Ratsch, Christian

    2014-01-01

    The diffusion processes and kinetic barriers of individual carbon adatoms and clusters on graphene surfaces are investigated to provide fundamental understanding of the physics governing epitaxial growth of multilayer graphene. It is found that individual carbon adatoms form bonds with the underlying graphene whereas the interaction between graphene and carbon clusters, consisting of 6 atoms or more, is very weak being van der Waals in nature. Therefore, small carbon clusters are quite mobile on the graphene surfaces and the diffusion barrier is negligibly small (∼6 meV). This suggests the feasibility of high-quality graphene epitaxial growth at very low growth temperatures with small carbon clusters (e.g., hexagons) as carbon source. We propose that the growth mode is totally different from 3-dimensional bulk materials with the surface mobility of carbon hexagons being the highest over graphene surfaces that gradually decreases with further increase in cluster size

  5. The physics of epitaxial graphene on SiC(0001)

    International Nuclear Information System (INIS)

    Kageshima, H; Hibino, H; Tanabe, S

    2012-01-01

    Various physical properties of epitaxial graphene grown on SiC(0001) are studied. First, the electronic transport in epitaxial bilayer graphene on SiC(0001) and quasi-free-standing bilayer graphene on SiC(0001) is investigated. The dependences of the resistance and the polarity of the Hall resistance at zero gate voltage on the top-gate voltage show that the carrier types are electron and hole, respectively. The mobility evaluated at various carrier densities indicates that the quasi-free-standing bilayer graphene shows higher mobility than the epitaxial bilayer graphene when they are compared at the same carrier density. The difference in mobility is thought to come from the domain size of the graphene sheet formed. To clarify a guiding principle for controlling graphene quality, the mechanism of epitaxial graphene growth is also studied theoretically. It is found that a new graphene sheet grows from the interface between the old graphene sheets and the SiC substrate. Further studies on the energetics reveal the importance of the role of the step on the SiC surface. A first-principles calculation unequivocally shows that the C prefers to release from the step edge and to aggregate as graphene nuclei along the step edge rather than be left on the terrace. It is also shown that the edges of the existing graphene more preferentially absorb the isolated C atoms. For some annealing conditions, experiments can also provide graphene islands on SiC(0001) surfaces. The atomic structures are studied theoretically together with their growth mechanism. The proposed embedded island structures actually act as a graphene island electronically, and those with zigzag edges have a magnetoelectric effect. Finally, the thermoelectric properties of graphene are theoretically examined. The results indicate that reducing the carrier scattering suppresses the thermoelectric power and enhances the thermoelectric figure of merit. The fine control of the Fermi energy position is thought to

  6. Graphene nanoribbons epitaxy on boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Xiaobo; Wang, Shuopei; Wu, Shuang; Chen, Peng; Zhang, Jing; Zhao, Jing; Meng, Jianling; Xie, Guibai; Wang, Duoming; Wang, Guole; Zhang, Ting Ting; Yang, Rong; Shi, Dongxia [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Yang, Wei [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Laboratoire Pierre Aigrain, ENS-CNRS UMR 8551, Universités Pierre et Marie Curie and Paris-Diderot, 24 rue Lhomond, 75231 Paris Cedex 05 (France); Watanabe, Kenji; Taniguchi, Takashi [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Zhang, Guangyu, E-mail: gyzhang@aphy.iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100190 (China)

    2016-03-14

    In this letter, we report a pilot study on epitaxy of monolayer graphene nanoribbons (GNRs) on hexagonal boron nitride (h-BN). We found that GNRs grow preferentially from the atomic steps of h-BN, forming in-plane heterostructures. GNRs with well-defined widths ranging from ∼15 nm to ∼150 nm can be obtained reliably. As-grown GNRs on h-BN have high quality with a carrier mobility of ∼20 000 cm{sup 2} V{sup −1} s{sup −1} for ∼100-nm-wide GNRs at a temperature of 1.7 K. Besides, a moiré pattern induced quasi-one-dimensional superlattice with a periodicity of ∼15 nm for GNR/h-BN was also observed, indicating zero crystallographic twisting angle between GNRs and h-BN substrate. The superlattice induced band structure modification is confirmed by our transport results. These epitaxial GNRs/h-BN with clean surfaces/interfaces and tailored widths provide an ideal platform for high-performance GNR devices.

  7. Van der Waals Epitaxy of GaSe/Graphene Heterostructure: Electronic and Interfacial Properties.

    Science.gov (United States)

    Ben Aziza, Zeineb; Henck, Hugo; Pierucci, Debora; Silly, Mathieu G; Lhuillier, Emmanuel; Patriarche, Gilles; Sirotti, Fausto; Eddrief, Mahmoud; Ouerghi, Abdelkarim

    2016-10-07

    Stacking two-dimensional materials in so-called van der Waals (vdW) heterostructures, like the combination of GaSe and graphene, provides the ability to obtain hybrid systems which are suitable to design optoelectronic devices. Here, we report the structural and electronic properties of the direct growth of multilayered GaSe by Molecular beam Epitaxy (MBE) on graphene. Reflection high-energy electron diffraction (RHEED) images exhibited sharp streaky features indicative of high quality GaSe layer produced via a vdW epitaxy. Micro-Raman spectroscopy showed that, after the vdW hetero-interface formation, the Raman signature of pristine graphene is preserved. However, the GaSe film tuned the charge density of graphene layer by shifting the Dirac point by about 80 meV toward lower binding energies, attesting an electron transfer from graphene to GaSe. Angle-resolved photoemission spectroscopy (ARPES) measurements showed that the maximum of the valence band of few layers of GaSe are located at the Γ point at a binding energy of about -0.73 eV relatively to the Fermi level (p-type doping). From the ARPES measurements, a hole effective mass defined along the ΓM direction and equal to about m*/m0 = -1.1 was determined. By coupling the ARPES data with high resolution X-ray photoemission spectroscopy (HR-XPS) measurements, the Schottky interface barrier height was estimated to be 1.2 eV. These findings allow deeper understanding of the interlayer interactions and the electronic structure of GaSe/graphene vdW heterostructure.

  8. Quantum Hall effect in epitaxial graphene with permanent magnets

    Science.gov (United States)

    Parmentier, F. D.; Cazimajou, T.; Sekine, Y.; Hibino, H.; Irie, H.; Glattli, D. C.; Kumada, N.; Roulleau, P.

    2016-12-01

    We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors v = ±2, commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications.

  9. Quantum Hall effect in epitaxial graphene with permanent magnets.

    Science.gov (United States)

    Parmentier, F D; Cazimajou, T; Sekine, Y; Hibino, H; Irie, H; Glattli, D C; Kumada, N; Roulleau, P

    2016-12-06

    We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors v = ±2, commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications.

  10. Top- and side-gated epitaxial graphene field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xuebin; Wu, Xiaosong; Sprinkle, Mike; Ming, Fan; Ruan, Ming; Hu, Yike; De Heer, Walt A. [Georgia Institute of Technology, School of Physics, Atlanta, GA (United States); Berger, Claire [Georgia Institute of Technology, School of Physics, Atlanta, GA (United States); CNRS-Institut Neel, Grenoble (France)

    2010-02-15

    Three types of first generation epitaxial graphene (EG) field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the carbon and silicon faces of hexagonal silicon carbide and patterned with electron beam lithography. The channels have a Hall bar geometry to facilitate magnetoresistance measurements. FETs patterned on the Si-face exhibit off-to-on channel resistance ratios that exceed 30. C-face FETs have lower off-to-on resistance ratios, but their mobilities (up to 5000 cm{sup 2}/Vs) are much larger than that for Si-face transistors. Initial investigations into all-graphene side-gate FET structures are promising. Conductivity (left panel) and transport resistances {rho}{sub xx} and {rho}{sub xy} of a top gate graphene Hall bar on SiC Si-face, showing a sign reversal of the hall coefficient at the resistance peak. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  11. Substrate-induced magnetism in epitaxial graphene buffer layers.

    Science.gov (United States)

    Ramasubramaniam, A; Medhekar, N V; Shenoy, V B

    2009-07-08

    Magnetism in graphene is of fundamental as well as technological interest, with potential applications in molecular magnets and spintronic devices. While defects and/or adsorbates in freestanding graphene nanoribbons and graphene sheets have been shown to cause itinerant magnetism, controlling the density and distribution of defects and adsorbates is in general difficult. We show from first principles calculations that graphene buffer layers on SiC(0001) can also show intrinsic magnetism. The formation of graphene-substrate chemical bonds disrupts the graphene pi-bonds and causes localization of graphene states near the Fermi level. Exchange interactions between these states lead to itinerant magnetism in the graphene buffer layer. We demonstrate the occurrence of magnetism in graphene buffer layers on both bulk-terminated as well as more realistic adatom-terminated SiC(0001) surfaces. Our calculations show that adatom density has a profound effect on the spin distribution in the graphene buffer layer, thereby providing a means of engineering magnetism in epitaxial graphene.

  12. Oxygen Switching of the Epitaxial Graphene-Metal Interaction

    DEFF Research Database (Denmark)

    Larciprete, Rosanna; Ulstrup, Søren; Lacovig, Paolo

    2012-01-01

    in the valence band are removed, and the spectrum of strongly hole-doped, quasi free-standing graphene with a single Dirac cone around the K point is observed. The oxygen can be deintercalated by annealing, and this process takes place at around T = 600 K, in a rather abrupt way. A small amount of carbon atoms......Using photoemission spectroscopy techniques, we show that oxygen intercalation is achieved on an extended layer of epitaxial graphene on Ir(111), which results in the “lifting” of the graphene layer and in its decoupling from the metal substrate. The oxygen adsorption below graphene proceeds...... as on clean Ir(111), giving only a slightly higher oxygen coverage. Upon lifting, the C 1s signal shows a downshift in binding energy, due to the charge transfer to graphene from the oxygen-covered metal surface. Moreover, the characteristic spectral signatures of the graphenesubstrate interaction...

  13. Structured epitaxial graphene: growth and properties

    International Nuclear Information System (INIS)

    Hu Yike; Ruan Ming; Guo Zelei; Dong Rui; Palmer, James; Hankinson, John; Berger, Claire; Heer, Walt A de

    2012-01-01

    Graphene is generally considered to be a strong candidate to succeed silicon as an electronic material. However, to date, it actually has not yet demonstrated capabilities that exceed standard semiconducting materials. Currently demonstrated viable graphene devices are essentially limited to micrometre-sized ultrahigh-frequency analogue field effect transistors and quantum Hall effect devices for metrology. Nanoscopically patterned graphene tends to have disordered edges that severely reduce mobilities thereby obviating its advantage over other materials. Here we show that graphene grown on structured silicon carbide surfaces overcomes the edge roughness and promises to provide an inroad into nanoscale patterning of graphene. We show that high-quality ribbons and rings can be made using this technique. We also report on the progress towards high-mobility graphene monolayers on silicon carbide for device applications. (paper)

  14. The invention of graphene electronics and the physics of epitaxial graphene on silicon carbide

    International Nuclear Information System (INIS)

    De Heer, Walt A

    2012-01-01

    Graphene electronics was officially invented at the Georgia Institute of Technology in 2003 after experimental and theoretical research on graphene properties starting from 2001. This paper focuses on the motivation and events leading to the invention of graphene electronics, as well as on recent developments. Graphene electronics was originally conceived as a new electronics paradigm to incorporate the room-temperature ballistic and coherent properties of carbon nanotubes in a patternable electronic material. Graphene on silicon carbide was chosen as the most suitable material. Other electronics schemes, involving transferred (exfoliated and chemical vapor deposition-produced) graphitic materials, that operate in the diffusive regime may not be competitive with standard methods and may therefore not significantly impact electronics. In recent years, epitaxial graphene has improved to the point where graphene electronics according to the original concept appears to be within reach. Beyond electronics, epitaxial graphene research has led to important developments in graphene physics in general and has become a leading platform for graphene science as well.

  15. Low contact resistance in epitaxial graphene devices for quantum metrology

    Energy Technology Data Exchange (ETDEWEB)

    Yager, Tom, E-mail: yager@chalmers.se, E-mail: ywpark@snu.ac.kr; Lartsev, Arseniy; Lara-Avila, Samuel; Kubatkin, Sergey [Department of Microtechnology and Nanoscience, Chalmers University of Technology Göteborg, S-412 96 (Sweden); Cedergren, Karin [School of Physics, University of New South Wales, Sydney, NSW-2052 (Australia); Yakimova, Rositsa [Department of Physics, Chemistry and Biology (IFM), Linköping University Linköping, S-581 83 (Sweden); Panchal, Vishal; Kazakova, Olga [National Physical Laboratory, Teddington, TW11 0LW (United Kingdom); Tzalenchuk, Alexander [National Physical Laboratory, Teddington, TW11 0LW (United Kingdom); Department of Physics, Royal Holloway, University of London, Egham, TW20 0EX (United Kingdom); Kim, Kyung Ho; Park, Yung Woo, E-mail: yager@chalmers.se, E-mail: ywpark@snu.ac.kr [Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)

    2015-08-15

    We investigate Ti/Au contacts to monolayer epitaxial graphene on SiC (0001) for applications in quantum resistance metrology. Using three-terminal measurements in the quantum Hall regime we observed variations in contact resistances ranging from a minimal value of 0.6 Ω up to 11 kΩ. We identify a major source of high-resistance contacts to be due bilayer graphene interruptions to the quantum Hall current, whilst discarding the effects of interface cleanliness and contact geometry for our fabricated devices. Moreover, we experimentally demonstrate methods to improve the reproducibility of low resistance contacts (<10 Ω) suitable for high precision quantum resistance metrology.

  16. Low contact resistance in epitaxial graphene devices for quantum metrology

    Directory of Open Access Journals (Sweden)

    Tom Yager

    2015-08-01

    Full Text Available We investigate Ti/Au contacts to monolayer epitaxial graphene on SiC (0001 for applications in quantum resistance metrology. Using three-terminal measurements in the quantum Hall regime we observed variations in contact resistances ranging from a minimal value of 0.6 Ω up to 11 kΩ. We identify a major source of high-resistance contacts to be due bilayer graphene interruptions to the quantum Hall current, whilst discarding the effects of interface cleanliness and contact geometry for our fabricated devices. Moreover, we experimentally demonstrate methods to improve the reproducibility of low resistance contacts (<10 Ω suitable for high precision quantum resistance metrology.

  17. Rotationally Commensurate Growth of MoS2 on Epitaxial Graphene

    Science.gov (United States)

    2015-11-13

    Rotationally Commensurate Growth of MoS2 on Epitaxial Graphene Xiaolong Liu,†,¶ Itamar Balla,‡,¶ Hadallia Bergeron,‡ Gavin P. Campbell,‡ Michael J...ABSTRACT: Atomically thin MoS2/ graphene heterostructures are promising candidates for nanoelectronic and optoelectronic technolo- gies. Among...different graphene substrates, epitaxial graphene (EG) on SiC provides several potential advantages for such heterostructures, including high electronic

  18. In-plane x-ray diffraction for characterization of monolayer and few-layer transition metal dichalcogenide films

    Science.gov (United States)

    Chubarov, Mikhail; Choudhury, Tanushree H.; Zhang, Xiaotian; Redwing, Joan M.

    2018-02-01

    There is significant interest in the growth of single crystal monolayer and few-layer films of transition metal dichalcogenides (TMD) and other 2D materials for scientific exploration and potential applications in optics, electronics, sensing, catalysis and others. The characterization of these materials is crucial in determining the properties and hence the applications. The ultra-thin nature of 2D layers presents a challenge to the use of x-ray diffraction (XRD) analysis with conventional Bragg-Brentano geometry in analyzing the crystallinity and epitaxial orientation of 2D films. To circumvent this problem, we demonstrate the use of in-plane XRD employing lab scale equipment which uses a standard Cu x-ray tube for the analysis of the crystallinity of TMD monolayer and few-layer films. The applicability of this technique is demonstrated in several examples for WSe2 and WS2 films grown by chemical vapor deposition on single crystal substrates. In-plane XRD was used to determine the epitaxial relation of WSe2 grown on c-plane sapphire and on SiC with an epitaxial graphene interlayer. The evolution of the crystal structure orientation of WS2 films on sapphire as a function of growth temperature was also examined. Finally, the epitaxial relation of a WS2/WSe2 vertical heterostructure deposited on sapphire substrate was determined. We observed that WSe2 grows epitaxially on both substrates employed in this work under all conditions studied while WS2 exhibits various preferred orientations on sapphire substrate which are temperature dependent. In contrast to the sapphire substrate, WS2 deposited on WSe2 exhibits only one preferred orientation which may provide a route to better control the orientation and crystal quality of WS2. In the case of epitaxial graphene on SiC, no graphene-related peaks were observed in in-plane XRD while its presence was confirmed using Raman spectroscopy. This demonstrates the limitation of the in-plane XRD technique for characterizing low

  19. van der Waals epitaxial ZnTe thin film on single-crystalline graphene

    Science.gov (United States)

    Sun, Xin; Chen, Zhizhong; Wang, Yiping; Lu, Zonghuan; Shi, Jian; Washington, Morris; Lu, Toh-Ming

    2018-01-01

    Graphene template has long been promoted as a promising host to support van der Waals flexible electronics. However, van der Waals epitaxial growth of conventional semiconductors in planar thin film form on transferred graphene sheets is challenging because the nucleation rate of film species on graphene is significantly low due to the passive surface of graphene. In this work, we demonstrate the epitaxy of zinc-blende ZnTe thin film on single-crystalline graphene supported by an amorphous glass substrate. Given the amorphous nature and no obvious remote epitaxy effect of the glass substrate, this study clearly proves the van der Waals epitaxy of a 3D semiconductor thin film on graphene. X-ray pole figure analysis reveals the existence of two ZnTe epitaxial orientational domains on graphene, a strong X-ray intensity observed from the ZnTe [ 1 ¯ 1 ¯ 2] ǁ graphene [10] orientation domain, and a weaker intensity from the ZnTe [ 1 ¯ 1 ¯ 2] ǁ graphene [11] orientation domain. Furthermore, this study systematically investigates the optoelectronic properties of this epitaxial ZnTe film on graphene using temperature-dependent Raman spectroscopy, steady-state and time-resolved photoluminescence spectroscopy, and fabrication and characterization of a ZnTe-graphene photodetector. The research suggests an effective approach towards graphene-templated flexible electronics.

  20. Extraordinary Photoluminescence and Strong Temperature/Angle-Dependent Raman Responses in Few-Layer Phosphorene

    OpenAIRE

    Zhang, Shuang; Yang, Jiong; Xu, Renjing; Wang, Fan; Li, Weifeng; Ghufran, Muhammad; Zhang, Yong-wei; Yu, Zongfu; Zhang, Gang; Qin, Qinghua; Lu, Yuerui

    2014-01-01

    Phosphorene is a new family member of two-dimensional materials. We observed strong and highly layer-dependent photoluminescence in few-layer phosphorene (2 to 5 layers). The results confirmed the theoretical prediction that few-layer phosphorene has a direct and layer-sensitive band gap. We also demonstrated that few-layer phosphorene is more sensitive to temperature modulation than graphene and MoS2 in Raman scattering. The anisotropic Raman response in few-layer phosphorene has enabled us ...

  1. Multilayer epitaxial graphene grown on the SiC (000- 1) surface; structure and electronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Sprinkle, M.; Hicks, J.; Tejeda, A.; Taleb-Ibrahimi, A.; Le Fevre, P.; Bertran, F.; Tinkey, H.; Clark, M.C.; Soukiassian, P.; Martinotti, D.; Hass, J.; Conrad, E.H. (CNRS-UMR); (CEAS); (GIT)

    2010-10-22

    We review the progress towards developing epitaxial graphene as a material for carbon electronics. In particular, we discuss improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's (MEG's) electronic properties. Although graphene grown on both polar faces of SiC will be discussed, our discussions will focus on graphene grown on the (000{bar 1}) C-face of SiC. The unique properties of C-face MEG have become apparent. These films behave electronically like a stack of nearly independent graphene sheets rather than a thin Bernal stacked graphite sample. The origins of multilayer graphene's electronic behaviour are its unique highly ordered stacking of non-Bernal rotated graphene planes. While these rotations do not significantly affect the inter-layer interactions, they do break the stacking symmetry of graphite. It is this broken symmetry that leads to each sheet behaving like isolated graphene planes.

  2. Graphene Substrate for van der Waals Epitaxy of Layer-Structured Bismuth Antimony Telluride Thermoelectric Film.

    Science.gov (United States)

    Kim, Eun Sung; Hwang, Jae-Yeol; Lee, Kyu Hyoung; Ohta, Hiromichi; Lee, Young Hee; Kim, Sung Wng

    2017-02-01

    Graphene as a substrate for the van der Waals epitaxy of 2D layered materials is utilized for the epitaxial growth of a layer-structured thermoelectric film. Van der Waals epitaxial Bi 0.5 Sb 1.5 Te 3 film on graphene synthesized via a simple and scalable fabrication method exhibits good crystallinity and high thermoelectric transport properties comparable to single crystals. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Few-layer black phosphorus nanoparticles.

    Science.gov (United States)

    Sofer, Zdenek; Bouša, Daniel; Luxa, Jan; Mazanek, Vlastimil; Pumera, Martin

    2016-01-28

    Herein, black phosphorus quantum dots and nanoparticles of a few layer thickness were prepared and characterized using STEM, AFM, dynamic light scattering, X-ray photoelectron spectroscopy, X-ray diffraction, Raman spectroscopy and photoluminescence. Impact electrochemistry of the induvidual black phosphorus nanoparticles allows their size determination. The centrifugation of colloidal black phosphorus nanoparticles allowed separation of quantum dots with sizes up to 15 nm. These black phosphorus nanoparticles exhibit a large band gap and are expected to find a wide range of applications from semiconductors to biomolecule tags. The use of black phosphorus nanoparticles for vapour sensing was successfully demonstrated.

  4. Molecular beam epitaxial growth of graphene and ridge-structure networks of graphene

    International Nuclear Information System (INIS)

    Maeda, Fumihiko; Hibino, Hiroki

    2011-01-01

    By gas-source molecular beam epitaxy (MBE) using cracked ethanol, we grew graphene at substrate temperatures between 600 and 915 °C on graphene formed on SiC(0 0 0 1) by thermal decomposition. To investigate the substrate temperature dependence of graphene growth we analysed the MBE-grown graphene by Raman spectroscopy and in situ x-ray photoelectron spectroscopy (XPS) and observed it by atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (TEM). Analyses using the G-band peak and the peak intensity ratio between D- and G-band peaks in the Raman spectra revealed that growth at higher temperatures improved the crystallinity and increased the domain size. Although the growth rate decreased at higher temperatures, as revealed by XPS, these results indicated that growth at a higher temperature is effective in obtaining graphene of higher quality. Furthermore, the AFM and TEM observations revealed a network of fin-like ridge structures of graphene sticking out from the surface. The presence of these 'graphene nanofins' indicated that two-dimensional islands of graphene are surrounded by the nanofins, and the island size was estimated to be 67 nm using the average distance between the nanofins.

  5. Extraordinary photoluminescence and strong temperature/angle-dependent Raman responses in few-layer phosphorene.

    Science.gov (United States)

    Zhang, Shuang; Yang, Jiong; Xu, Renjing; Wang, Fan; Li, Weifeng; Ghufran, Muhammad; Zhang, Yong-Wei; Yu, Zongfu; Zhang, Gang; Qin, Qinghua; Lu, Yuerui

    2014-09-23

    Phosphorene is a new family member of two-dimensional materials. We observed strong and highly layer-dependent photoluminescence in few-layer phosphorene (two to five layers). The results confirmed the theoretical prediction that few-layer phosphorene has a direct and layer-sensitive band gap. We also demonstrated that few-layer phosphorene is more sensitive to temperature modulation than graphene and MoS2 in Raman scattering. The anisotropic Raman response in few-layer phosphorene has enabled us to use an optical method to quickly determine the crystalline orientation without tunneling electron microscopy or scanning tunneling microscopy. Our results provide much needed experimental information about the band structures and exciton nature in few-layer phosphorene.

  6. Surface functionalization of epitaxial graphene on SiC by ion irradiation for gas sensing application

    Science.gov (United States)

    Kaushik, Priya Darshni; Ivanov, Ivan G.; Lin, Pin-Cheng; Kaur, Gurpreet; Eriksson, Jens; Lakshmi, G. B. V. S.; Avasthi, D. K.; Gupta, Vinay; Aziz, Anver; Siddiqui, Azher M.; Syväjärvi, Mikael; Yazdi, G. Reza

    2017-05-01

    In this work, surface functionalization of epitaxial graphene grown on silicon carbide was performed by ion irradiation to investigate their gas sensing capabilities. Swift heavy ion irradiation using 100 MeV silver ions at four varying fluences was implemented on epitaxial graphene to investigate morphological and structural changes and their effects on the gas sensing capabilities of graphene. Sensing devices are expected as one of the first electronic applications using graphene and most of them use functionalized surfaces to tailor a certain function. In our case, we have studied irradiation as a tool to achieve functionalization. Morphological and structural changes on epitaxial graphene layers were investigated by atomic force microscopy, Raman spectroscopy, Raman mapping and reflectance mapping. The surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles at highest fluence (2 × 1013 ions/cm2). Raman spectra analysis shows that the graphene defect density is increased with increasing fluence, while Raman mapping and reflectance mapping show that there is also a reduction of monolayer graphene coverage. The samples were investigated for ammonia and nitrogen dioxide gas sensing applications. Sensors fabricated on pristine and irradiated samples showed highest gas sensing response at an optimal fluence. Our work provides new pathways for introducing defects in controlled manner in epitaxial graphene, which can be used not only for gas sensing application but also for other applications, such as electrochemical, biosensing, magnetosensing and spintronic applications.

  7. van der Waals epitaxy of CdS thin films on single-crystalline graphene

    Science.gov (United States)

    Sun, Xin; Lu, Zonghuan; Xie, Weiyu; Wang, Yiping; Shi, Jian; Zhang, Shengbai; Washington, Morris A.; Lu, Toh-Ming

    2017-04-01

    van der Waals epitaxy (vdWE) of three-dimensional CdS thin films on both single-crystalline graphene/Cu(111)/spinel(111) and single-crystalline graphene/SiO2/Si substrates is achieved via thermal evaporation. X-ray and electron backscatter diffraction pole figures reveal that the CdS films are a Wurtzite structure with a weak epitaxy on graphene and accompanied with a fiber texture background. The epitaxial alignment between CdS and graphene is observed to be an unusual non-parallel epitaxial relationship with a 30° rotation between the unit vectors of CdS and graphene. A geometrical model based on the minimization of superlattice area mismatch is employed to calculate possible interface lattice arrangement. It is found that the 30° rotation between CdS and graphene is indeed the most probable interface epitaxial lattice alignment. The vdWE of CdS on graphene, transferrable to arbitrary substrates, may represent a step forward for the growth of quality CdS thin films on arbitrary substrates through a graphene buffer.

  8. Surface functionalization of epitaxial graphene on SiC by ion irradiation for gas sensing application

    International Nuclear Information System (INIS)

    Kaushik, Priya Darshni; Ivanov, Ivan G.; Lin, Pin-Cheng; Kaur, Gurpreet; Eriksson, Jens; Lakshmi, G.B.V.S.; Avasthi, D.K.; Gupta, Vinay; Aziz, Anver; Siddiqui, Azher M.; Syväjärvi, Mikael; Yazdi, G. Reza

    2017-01-01

    Highlights: • For the first time the gas sensing application of SHI irradiated epitaxial graphene on SiC is explored. • Surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles. • Existence of an optimal fluence which maximize the gas sensing response towards NO 2 and NH 3 gases. - Abstract: In this work, surface functionalization of epitaxial graphene grown on silicon carbide was performed by ion irradiation to investigate their gas sensing capabilities. Swift heavy ion irradiation using 100 MeV silver ions at four varying fluences was implemented on epitaxial graphene to investigate morphological and structural changes and their effects on the gas sensing capabilities of graphene. Sensing devices are expected as one of the first electronic applications using graphene and most of them use functionalized surfaces to tailor a certain function. In our case, we have studied irradiation as a tool to achieve functionalization. Morphological and structural changes on epitaxial graphene layers were investigated by atomic force microscopy, Raman spectroscopy, Raman mapping and reflectance mapping. The surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles at highest fluence (2 × 10 13 ions/cm 2 ). Raman spectra analysis shows that the graphene defect density is increased with increasing fluence, while Raman mapping and reflectance mapping show that there is also a reduction of monolayer graphene coverage. The samples were investigated for ammonia and nitrogen dioxide gas sensing applications. Sensors fabricated on pristine and irradiated samples showed highest gas sensing response at an optimal fluence. Our work provides new pathways for introducing defects in controlled manner in epitaxial graphene, which can be used not only for gas sensing application but also for other applications, such as electrochemical, biosensing, magnetosensing and spintronic

  9. Surface functionalization of epitaxial graphene on SiC by ion irradiation for gas sensing application

    Energy Technology Data Exchange (ETDEWEB)

    Kaushik, Priya Darshni, E-mail: kaushik.priyadarshni@gmail.com [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Department of Physics, Jamia Millia Islamia, New Delhi, 110025 (India); Ivanov, Ivan G.; Lin, Pin-Cheng [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Kaur, Gurpreet [Department of Physics and Astrophysics, University of Delhi, Delhi, 110007 (India); Eriksson, Jens [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Lakshmi, G.B.V.S. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067 (India); Avasthi, D.K. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067 (India); Amity Institute of Nanotechnology, Noida 201313 (India); Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi, 110007 (India); Aziz, Anver; Siddiqui, Azher M. [Department of Physics, Jamia Millia Islamia, New Delhi, 110025 (India); Syväjärvi, Mikael [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Yazdi, G. Reza, E-mail: yazdi@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden)

    2017-05-01

    Highlights: • For the first time the gas sensing application of SHI irradiated epitaxial graphene on SiC is explored. • Surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles. • Existence of an optimal fluence which maximize the gas sensing response towards NO{sub 2} and NH{sub 3} gases. - Abstract: In this work, surface functionalization of epitaxial graphene grown on silicon carbide was performed by ion irradiation to investigate their gas sensing capabilities. Swift heavy ion irradiation using 100 MeV silver ions at four varying fluences was implemented on epitaxial graphene to investigate morphological and structural changes and their effects on the gas sensing capabilities of graphene. Sensing devices are expected as one of the first electronic applications using graphene and most of them use functionalized surfaces to tailor a certain function. In our case, we have studied irradiation as a tool to achieve functionalization. Morphological and structural changes on epitaxial graphene layers were investigated by atomic force microscopy, Raman spectroscopy, Raman mapping and reflectance mapping. The surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles at highest fluence (2 × 10{sup 13} ions/cm{sup 2}). Raman spectra analysis shows that the graphene defect density is increased with increasing fluence, while Raman mapping and reflectance mapping show that there is also a reduction of monolayer graphene coverage. The samples were investigated for ammonia and nitrogen dioxide gas sensing applications. Sensors fabricated on pristine and irradiated samples showed highest gas sensing response at an optimal fluence. Our work provides new pathways for introducing defects in controlled manner in epitaxial graphene, which can be used not only for gas sensing application but also for other applications, such as electrochemical, biosensing, magnetosensing and

  10. Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001

    Directory of Open Access Journals (Sweden)

    Yakimova Rositza

    2011-01-01

    Full Text Available Abstract In this work, we present a nanometer resolution structural characterization of epitaxial graphene (EG layers grown on 4H-SiC (0001 8° off-axis, by annealing in inert gas ambient (Ar in a wide temperature range (Tgr from 1600 to 2000°C. For all the considered growth temperatures, few layers of graphene (FLG conformally covering the 100 to 200-nm wide terraces of the SiC surface have been observed by high-resolution cross-sectional transmission electron microscopy (HR-XTEM. Tapping mode atomic force microscopy (t-AFM showed the formation of wrinkles with approx. 1 to 2 nm height and 10 to 20 nm width in the FLG film, as a result of the release of the compressive strain, which builds up in FLG during the sample cooling due to the thermal expansion coefficients mismatch between graphene and SiC. While for EG grown on on-axis 4H-SiC an isotropic mesh-like network of wrinkles interconnected into nodes is commonly reported, in the present case of a vicinal SiC surface, wrinkles are preferentially oriented in the direction perpendicular to the step edges of the SiC terraces. For each Tgr, the number of graphene layers was determined on very small sample areas by HR-XTEM and, with high statistics and on several sample positions, by measuring the depth of selectively etched trenches in FLG by t-AFM. Both the density of wrinkles and the number of graphene layers are found to increase almost linearly as a function of the growth temperature in the considered temperature range.

  11. Intercalation of metals and silicon at the interface of epitaxial graphene and its substrates

    International Nuclear Information System (INIS)

    Huang Li; Xu Wen-Yan; Que Yan-De; Mao Jin-Hai; Meng Lei; Pan Li-Da; Li Geng; Wang Ye-Liang; Du Shi-Xuan; Gao Hong-Jun; Liu Yun-Qi

    2013-01-01

    Intercalations of metals and silicon between epitaxial graphene and its substrates are reviewed. For metal intercalation, seven different metals have been successfully intercalated at the interface of graphene/Ru(0001) and form different intercalated structures. Meanwhile, graphene maintains its original high quality after the intercalation and shows features of weakened interaction with the substrate. For silicon intercalation, two systems, graphene on Ru(0001) and on Ir(111), have been investigated. In both cases, graphene preserves its high quality and regains its original superlative properties after the silicon intercalation. More importantly, we demonstrate that thicker silicon layers can be intercalated at the interface, which allows the atomic control of the distance between graphene and the metal substrates. These results show the great potential of the intercalation method as a non-damaging approach to decouple epitaxial graphene from its substrates and even form a dielectric layer for future electronic applications. (topical review - low-dimensional nanostructures and devices)

  12. Conductivity of epitaxial and CVD graphene with correlated line defects

    DEFF Research Database (Denmark)

    Radchenko, T. M.; Shylau, Artsem; Zozoulenko, I. V.

    2014-01-01

    -type scattering potential. The dc conductivity is calculated numerically for different cases of distribution of line defects. This includes a random (uncorrelated) and a correlated distribution with a prevailing direction in the orientation of lines. The anisotropy of the conductivity along and across the line...... defects is revealed, which agrees with experimental measurements for epitaxial graphene grown on SiC. We performed a detailed study of the conductivity for different defect correlations, introducing the correlation angle αmax-the maximum possible angle between any two lines. We find that for a given...... electron density, the relative enhancement of the conductivity for the case of fully correlated line defects in comparison to the case of uncorrelatecl ones is larger for a higher defect density. Finally, we, for the first time, study the conductivity of realistic samples where both extended line defects...

  13. Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111)

    OpenAIRE

    Abe Shunsuke; Handa Hiroyuki; Takahashi Ryota; Imaizumi Kei; Fukidome Hirokazu; Suemitsu Maki

    2010-01-01

    Abstract Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111) thin films on Si(111) has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D2-TPD) and complementarily by ex situ Raman and C1s core-level spectroscopies. The surface of the 3C-SiC(111)/Si(111) is Si-terminated before the graphitization, and ...

  14. Mini array of quantum Hall devices based on epitaxial graphene

    Energy Technology Data Exchange (ETDEWEB)

    Novikov, S.; Lebedeva, N. [Department of Micro and Nanosciences, Aalto University, Micronova, Tietotie 3, Espoo (Finland); Hämäläinen, J.; Iisakka, I.; Immonen, P.; Manninen, A. J.; Satrapinski, A. [VTT Technical Research Centre of Finland Ltd., Centre for Metrology MIKES, P.O. Box 1000, 02044 VTT (Finland)

    2016-05-07

    Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux R{sub H,2} at a filling factor v = 2 starting from a relatively low magnetic field (between 4 T and 5 T) when the temperature was 1.5 K. The precision measurements of quantized Hall resistance of four QHE devices connected by triple series connections and external bonding wires were done at B = 7 T and T = 1.5 K using a commercial precision resistance bridge with 50 μA current through the QHE device. The results showed that the deviation of the quantized Hall resistance of the series connection of four graphene-based QHE devices from the expected value of 4×R{sub H,2} = 2 h/e{sup 2} was smaller than the relative standard uncertainty of the measurement (<1 × 10{sup −7}) limited by the used resistance bridge.

  15. Acoustoelectric transport at gigahertz frequencies in coated epitaxial graphene

    Energy Technology Data Exchange (ETDEWEB)

    Hernández-Mínguez, A., E-mail: alberto.h.minguez@pdi-berlin.de; Tahraoui, A.; Lopes, J. M. J.; Santos, P. V. [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2016-05-09

    Epitaxial graphene (EG) produced from SiC surfaces by silicon sublimation is emerging as a material for electronic applications due to its good electronic properties and availability over large areas on a semiconducting substrate. In this contribution, we report on the transport of charge carriers in EG on SiC using high-frequency (>1 GHz) surface acoustic waves (SAWs). In our devices, the EG is coated with hydrogen-silsesquioxane, SiO{sub 2}, and a ZnO layer. This allows the efficient generation of SAWs and is compatible with the deposition of a metal top gate. Measurements of frequency- and time-resolved power scattering parameters confirm the generation and propagation of SAWs with frequencies of up to more than 7 GHz. Furthermore, the ZnO coating enhances the acoustoelectric currents by two orders of magnitude as compared to our previous uncoated samples. These results are an important step towards the dynamic acoustic control of charge carriers in graphene at gigahertz frequencies.

  16. Evolution of interfacial intercalation chemistry on epitaxial graphene/SiC by surface enhanced Raman spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ferralis, Nicola, E-mail: ferralis@mit.edu [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Carraro, Carlo [Department of Chemical and Biomolecular Engineering, University of California, Berkeley, CA 94720 (United States)

    2014-11-30

    Highlights: • H-intercalated epitaxial graphene–SiC interface studied with surface enhanced Raman. • Evolution of graphene and H–Si interface with UV-ozone, annealing and O-exposure. • H–Si interface and quasi-freestanding graphene are retained after UV-ozone treatment. • Enhanced ozonolytic reactivity at the edges of H-intercalated defected graphene. • Novel SERS method for characterizing near-surface graphene–substrate interfaces. - Abstract: A rapid and facile evaluation of the effects of physical and chemical processes on the interfacial layer between epitaxial graphene monolayers on SiC(0 0 0 1) surfaces is essential for applications in electronics, photonics, and optoelectronics. Here, the evolution of the atomic scale epitaxial graphene-buffer-layer–SiC interface through hydrogen intercalation, thermal annealings, UV-ozone etching and oxygen exposure is studied by means of single microparticle mediated surface enhanced Raman spectroscopy (smSERS). The evolution of the interfacial chemistry in the buffer layer is monitored through the Raman band at 2132 cm{sup −1} corresponding to the Si-H stretch mode. Graphene quality is monitored directly by the selectively enhanced Raman signal of graphene compared to the SiC substrate signal. Through smSERS, a simultaneous correlation between optimized hydrogen intercalation in epitaxial graphene/SiC and an increase in graphene quality is uncovered. Following UV-ozone treatment, a fully hydrogen passivated interface is retained, while a moderate degradation in the quality of the hydrogen intercalated quasi-freestanding graphene is observed. While hydrogen intercalated defect free quasi-freestanding graphene is expected to be robust upon UV-ozone, thermal annealing, and oxygen exposure, ozonolytic reactivity at the edges of H-intercalated defected graphene results in enhanced amorphization of the quasi-freestanding (compared to non-intercalated) graphene, leading ultimately to its complete etching.

  17. Evolution of interfacial intercalation chemistry on epitaxial graphene/SiC by surface enhanced Raman spectroscopy

    International Nuclear Information System (INIS)

    Ferralis, Nicola; Carraro, Carlo

    2014-01-01

    Highlights: • H-intercalated epitaxial graphene–SiC interface studied with surface enhanced Raman. • Evolution of graphene and H–Si interface with UV-ozone, annealing and O-exposure. • H–Si interface and quasi-freestanding graphene are retained after UV-ozone treatment. • Enhanced ozonolytic reactivity at the edges of H-intercalated defected graphene. • Novel SERS method for characterizing near-surface graphene–substrate interfaces. - Abstract: A rapid and facile evaluation of the effects of physical and chemical processes on the interfacial layer between epitaxial graphene monolayers on SiC(0 0 0 1) surfaces is essential for applications in electronics, photonics, and optoelectronics. Here, the evolution of the atomic scale epitaxial graphene-buffer-layer–SiC interface through hydrogen intercalation, thermal annealings, UV-ozone etching and oxygen exposure is studied by means of single microparticle mediated surface enhanced Raman spectroscopy (smSERS). The evolution of the interfacial chemistry in the buffer layer is monitored through the Raman band at 2132 cm −1 corresponding to the Si-H stretch mode. Graphene quality is monitored directly by the selectively enhanced Raman signal of graphene compared to the SiC substrate signal. Through smSERS, a simultaneous correlation between optimized hydrogen intercalation in epitaxial graphene/SiC and an increase in graphene quality is uncovered. Following UV-ozone treatment, a fully hydrogen passivated interface is retained, while a moderate degradation in the quality of the hydrogen intercalated quasi-freestanding graphene is observed. While hydrogen intercalated defect free quasi-freestanding graphene is expected to be robust upon UV-ozone, thermal annealing, and oxygen exposure, ozonolytic reactivity at the edges of H-intercalated defected graphene results in enhanced amorphization of the quasi-freestanding (compared to non-intercalated) graphene, leading ultimately to its complete etching

  18. Quasi van der Waals epitaxy of copper thin film on single-crystal graphene monolayer buffer

    Science.gov (United States)

    Lu, Zonghuan; Sun, Xin; Washington, Morris A.; Lu, Toh-Ming

    2018-03-01

    Quasi van der Waals epitaxial growth of face-centered cubic Cu (~100 nm) thin films on single-crystal monolayer graphene is demonstrated using thermal evaporation at an elevated substrate temperature of 250 °C. The single-crystal graphene was transferred to amorphous (glass) and crystalline (quartz) SiO2 substrates for epitaxy study. Raman analysis showed that the thermal evaporation method had minimal damage to the graphene lattice during the Cu deposition. X-ray diffraction and electron backscatter diffraction analyses revealed that both Cu films are single-crystal with (1 1 1) out-of-plane orientation and in-plane Σ3 twin domains of 60° rotation. The crystallinity of the SiO2 substrates has a negligible effect on the Cu crystal orientation during the epitaxial growth, implying the strong screening effect of graphene. We also demonstrate the epitaxial growth of polycrystalline Cu on a commercial polycrystalline monolayer graphene consisting of two orientation domains offset 30° to each other. It confirms that the crystal orientation of the epitaxial Cu film follows that of graphene, i.e. the Cu film consists of two orientation domains offset 30° to each other when deposited on polycrystalline graphene. Finally, on the contrary to the report in the literature, we show that the direct current and radio frequency flip sputtering method causes significant damage to the graphene lattice during the Cu deposition process, and therefore neither is a suitable method for Cu epitaxial growth on graphene.

  19. Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111/Si(111

    Directory of Open Access Journals (Sweden)

    Abe Shunsuke

    2010-01-01

    Full Text Available Abstract Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111 thin films on Si(111 has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D2-TPD and complementarily by ex situ Raman and C1s core-level spectroscopies. The surface of the 3C-SiC(111/Si(111 is Si-terminated before the graphitization, and it becomes C-terminated via the formation of C-rich (6√3 × 6√3R30° reconstruction as the graphitization proceeds, in a similar manner as the epitaxy of graphene on Si-terminated 6H-SiC(0001 proceeds.

  20. Transfer-Free Electrical Insulation of Epitaxial Graphene from its Metal Substrate

    DEFF Research Database (Denmark)

    Lizzit, Silvano; Larciprete, Rosanna; Lacovig, Paolo

    2012-01-01

    High-quality, large-area epitaxial graphene can be grown on metal surfaces, but its transport properties cannot be exploited because the electrical conduction is dominated by the substrate. Here we insulate epitaxial graphene on Ru(0001) by a stepwise intercalation of silicon and oxygen......, and the eventual formation of a SiO2 layer between the graphene and the metal. We follow the reaction steps by X-ray photoemission spectroscopy and demonstrate the electrical insulation using a nanoscale multipoint probe technique....

  1. Effect of Residual Gas Composition on Epitaxial Growth of Graphene on SiC

    Science.gov (United States)

    Kunc, J.; Rejhon, M.; Belas, E.; Dědič, V.; Moravec, P.; Franc, J.

    2017-10-01

    In recent years, graphene growth optimization has been one of the key routes towards large-scale, high-quality graphene production. We measure in situ residual gas content during epitaxial-graphene growth on silicon carbide (SiC) to find detrimental factors of epitaxial-graphene growth. The growth conditions in high vacuum, in argon, purified argon, and the flow of argon are compared. The grown epitaxial graphene is studied by Raman-scattering mapping. We determine mechanical strain, number of graphene layers and the graphene quality. The surface topography is measured by atomic force microscopy. Charge density and carrier mobility are studied by Hall-effect measurements in van der Pauw configuration. We identify the major role of the chemical reaction of carbon and residual water. The rate of the reaction is lowered when purified argon is used. We also show that, according to time-varying gas content, it is preferable to grow graphene at higher temperatures and shorter times. Other sources of growth environment contamination are also discussed. The reaction of residual gas and SiC is discussed as one of the factors decreasing the lateral size of SiC atomically flat terraces and leading to their irregular shape. The importance of purified argon and its sufficient flow rate is concluded to be important for high-quality graphene growth as it reduces the rate of undesired chemical reactions and provides a more stable and defined growth ambient.

  2. Multilayer epitaxial graphene grown on the (SiC 000 1-bar ) surface; structure and electronic properties

    International Nuclear Information System (INIS)

    Sprinkle, M; Hicks, J; Tinkey, H; Clark, M C; Hass, J; Conrad, E H; Tejeda, A; Taleb-Ibrahimi, A; Le Fevre, P; Bertran, F; Soukiassian, P; Martinotti, D

    2010-01-01

    We review the progress towards developing epitaxial graphene as a material for carbon electronics. In particular, we discuss improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's (MEG's) electronic properties. Although graphene grown on both polar faces of SiC will be discussed, our discussions will focus on graphene grown on the (0 0 0 1-bar ) C-face of SiC. The unique properties of C-face MEG have become apparent. These films behave electronically like a stack of nearly independent graphene sheets rather than a thin Bernal stacked graphite sample. The origins of multilayer graphene's electronic behaviour are its unique highly ordered stacking of non-Bernal rotated graphene planes. While these rotations do not significantly affect the inter-layer interactions, they do break the stacking symmetry of graphite. It is this broken symmetry that leads to each sheet behaving like isolated graphene planes.

  3. Defect mediated van der Waals epitaxy of hexagonal boron nitride on graphene

    Science.gov (United States)

    Heilmann, M.; Bashouti, M.; Riechert, H.; Lopes, J. M. J.

    2018-04-01

    Van der Waals heterostructures comprising of hexagonal boron nitride and graphene are promising building blocks for novel two-dimensional devices such as atomically thin transistors or capacitors. However, demonstrators of those devices have been so far mostly fabricated by mechanical assembly, a non-scalable and time-consuming method, where transfer processes can contaminate the surfaces. Here, we investigate a direct growth process for the fabrication of insulating hexagonal boron nitride on high quality epitaxial graphene using plasma assisted molecular beam epitaxy. Samples were grown at varying temperatures and times and studied using atomic force microscopy, revealing a growth process limited by desorption at high temperatures. Nucleation was mostly commencing from morphological defects in epitaxial graphene, such as step edges or wrinkles. Raman spectroscopy combined with x-ray photoelectron measurements confirm the formation of hexagonal boron nitride and prove the resilience of graphene against the nitrogen plasma used during the growth process. The electrical properties and defects in the heterostructures were studied with high lateral resolution by tunneling current and Kelvin probe force measurements. This correlated approach revealed a nucleation apart from morphological defects in epitaxial graphene, which is mediated by point defects. The presented results help understanding the nucleation and growth behavior during van der Waals epitaxy of 2D materials, and point out a route for a scalable production of van der Waals heterostructures.

  4. Looking behind the scenes: Raman spectroscopy of top-gated epitaxial graphene through the substrate

    International Nuclear Information System (INIS)

    Fromm, F; Wehrfritz, P; Seyller, Th; Hundhausen, M

    2013-01-01

    Raman spectroscopy is frequently used to study the properties of epitaxial graphene grown on silicon carbide (SiC). In this work, we present a confocal micro-Raman study of epitaxial graphene on SiC(0001) in top-down geometry, i.e. in a geometry where both the primary laser light beam as well as the back-scattered light is guided through the SiC substrate. Compared to the conventional top-up configuration, in which confocal micro-Raman spectra are measured from the air side, we observe a significant intensity enhancement in top-down configuration, indicating that most of the Raman-scattered light is emitted into the SiC substrate. The intensity enhancement is explained in terms of dipole radiation at a dielectric surface. The new technique opens the possibility to probe graphene layers in devices where the graphene layer is covered by non-transparent materials. We demonstrate this by measuring gate-modulated Raman spectra of a top-gated epitaxial graphene field effect device. Moreover, we show that these measurements enable us to disentangle the effects of strain and charge on the positions of the prominent Raman lines in epitaxial graphene on SiC. (paper)

  5. Remote epitaxy through graphene enables two-dimensional material-based layer transfer

    Science.gov (United States)

    Kim, Yunjo; Cruz, Samuel S.; Lee, Kyusang; Alawode, Babatunde O.; Choi, Chanyeol; Song, Yi; Johnson, Jared M.; Heidelberger, Christopher; Kong, Wei; Choi, Shinhyun; Qiao, Kuan; Almansouri, Ibraheem; Fitzgerald, Eugene A.; Kong, Jing; Kolpak, Alexie M.; Hwang, Jinwoo; Kim, Jeehwan

    2017-04-01

    Epitaxy—the growth of a crystalline material on a substrate—is crucial for the semiconductor industry, but is often limited by the need for lattice matching between the two material systems. This strict requirement is relaxed for van der Waals epitaxy, in which epitaxy on layered or two-dimensional (2D) materials is mediated by weak van der Waals interactions, and which also allows facile layer release from 2D surfaces. It has been thought that 2D materials are the only seed layers for van der Waals epitaxy. However, the substrates below 2D materials may still interact with the layers grown during epitaxy (epilayers), as in the case of the so-called wetting transparency documented for graphene. Here we show that the weak van der Waals potential of graphene cannot completely screen the stronger potential field of many substrates, which enables epitaxial growth to occur despite its presence. We use density functional theory calculations to establish that adatoms will experience remote epitaxial registry with a substrate through a substrate-epilayer gap of up to nine ångströms this gap can accommodate a monolayer of graphene. We confirm the predictions with homoepitaxial growth of GaAs(001) on GaAs(001) substrates through monolayer graphene, and show that the approach is also applicable to InP and GaP. The grown single-crystalline films are rapidly released from the graphene-coated substrate and perform as well as conventionally prepared films when incorporated in light-emitting devices. This technique enables any type of semiconductor film to be copied from underlying substrates through 2D materials, and then the resultant epilayer to be rapidly released and transferred to a substrate of interest. This process is particularly attractive in the context of non-silicon electronics and photonics, where the ability to re-use the graphene-coated substrates allows savings on the high cost of non-silicon substrates.

  6. Moiré-regulated self-assembly of cesium adatoms on epitaxial graphene

    Science.gov (United States)

    Petrović, Marin; Lazić, Predrag; Runte, Sven; Michely, Thomas; Busse, Carsten; Kralj, Marko

    2017-08-01

    Upon adsorption onto epitaxial graphene on Ir(111) at room temperature, Cs adatoms donate part of their charge to the substrate, which effectively creates mutually repelling entities that can diffuse across the graphene surface. By using scanning tunneling microscopy at 6 K, an ordered hexagonal structure of Cs adatoms with several rotated domains has been identified. The amount of charge transferred to graphene has been determined from the presented valence-band photoemission data. Density-functional calculations show that the repulsive interaction is additionally modulated by preferential adsorption of Cs to the atop region within the moiré unit cell. Our results provide direct atomistic insight into the self-assembly of individual atoms on epitaxial graphene, and they demonstrate how the moiré structure acts as a perturbation to that process.

  7. Single orientation graphene synthesized on iridium thin films grown by molecular beam epitaxy

    OpenAIRE

    Dangwal Pandey, A.; Krausert, Konstantin; Franz, D.; Grånäs, E.; Shayduk, R.; Müller, P.; Keller, Thomas F.; Noei, H.; Vonk, V.; Stierle, A.

    2016-01-01

    Heteroepitaxial iridium thin films were deposited on (0001) sapphire substrates by means of molecular beam epitaxy, and subsequently, one monolayer of graphene was synthesized by chemical vapor deposition. The influence of the growth parameters on the quality of the Ir films, as well as of graphene, was investigated system atically by means of low energy electron diffraction, x-ray reflectivity, x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and atomic force mic...

  8. Strain-engineered graphene grown on hexagonal boron nitride by molecular beam epitaxy

    OpenAIRE

    Summerfield, Alex; Davies, Andrew; Cheng, Tin S.; Korolkov, Vladimir V.; Cho, YongJin; Mellor, Christopher J.; Foxon, C. Thomas; Khlobystov, Andrei N.; Watanabe, Kenji; Taniguchi, Takashi; Eaves, Laurence; Novikov, Sergei V.; Beton, Peter H.

    2016-01-01

    Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20??m, and exhibits moir? patterns with large periodicities, up to ~30?nm, indicating that the layers are highly strained. Topological defects in the moir? patterns are observed and attributed to the relaxation of graphene islands which nucleate at different sites and subsequently coalesce. In addition, cracks are formed leading to strain relaxation, hig...

  9. Single orientation graphene synthesized on iridium thin films grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Dangwal Pandey, A., E-mail: arti.pandey@desy.de; Grånäs, E.; Shayduk, R.; Noei, H.; Vonk, V. [Deutsches Elektronen-Synchrotron (DESY), D-22607 Hamburg (Germany); Krausert, K.; Franz, D.; Müller, P.; Keller, T. F.; Stierle, A., E-mail: andreas.stierle@desy.de [Deutsches Elektronen-Synchrotron (DESY), D-22607 Hamburg (Germany); Fachbereich Physik, Universität Hamburg, D-22607 Hamburg (Germany)

    2016-08-21

    Heteroepitaxial iridium thin films were deposited on (0001) sapphire substrates by means of molecular beam epitaxy, and subsequently, one monolayer of graphene was synthesized by chemical vapor deposition. The influence of the growth parameters on the quality of the Ir films, as well as of graphene, was investigated systematically by means of low energy electron diffraction, x-ray reflectivity, x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Our study reveals (111) oriented iridium films with high crystalline quality and extremely low surface roughness, on which the formation of large-area epitaxial graphene is achieved. The presence of defects, like dislocations, twins, and 30° rotated domains in the iridium films is also discussed. The coverage of graphene was found to be influenced by the presence of 30° rotated domains in the Ir films. Low iridium deposition rates suppress these rotated domains and an almost complete coverage of graphene was obtained. This synthesis route yields inexpensive, air-stable, and large-area graphene with a well-defined orientation, making it accessible to a wider community of researchers for numerous experiments or applications, including those which use destructive analysis techniques or irreversible processes. Moreover, this approach can be used to tune the structural quality of graphene, allowing a systematic study of the influence of defects in various processes like intercalation below graphene.

  10. Mechanical exfoliation of epitaxial graphene on Ir(111) enabled by Br2 intercalation.

    Science.gov (United States)

    Herbig, Charlotte; Kaiser, Markus; Bendiab, Nedjma; Schumacher, Stefan; Förster, Daniel F; Coraux, Johann; Meerholz, Klaus; Michely, Thomas; Busse, Carsten

    2012-08-08

    We show here that Br(2) intercalation is an efficient method to enable exfoliation of epitaxial graphene on metals by adhesive tape. We exemplify this method for high-quality graphene of macroscopic extension on Ir(111). The sample quality and the transfer process are monitored using low-energy electron diffraction (LEED), scanning tunneling microscopy (STM), scanning electron microscopy (SEM) and Raman spectroscopy. The developed process provides an opportunity for preparing graphene of strictly monatomic thickness and well-defined orientation including the transfer to poly(ethylene terephthalate) (PET) foil.

  11. Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

    Energy Technology Data Exchange (ETDEWEB)

    Puybaret, Renaud; Jordan, Matthew B.; Voss, Paul L.; Ougazzaden, Abdallah, E-mail: aougazza@georgiatech-metz.fr [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); CNRS UMI 2958, Georgia Institute of Technology, 2 Rue Marconi, 57070 Metz (France); Patriarche, Gilles [CNRS, Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis (France); Sundaram, Suresh; El Gmili, Youssef [CNRS UMI 2958, Georgia Institute of Technology, 2 Rue Marconi, 57070 Metz (France); Salvestrini, Jean-Paul [Université de Lorraine, CentraleSupélec, LMOPS, EA4423, 57070 Metz (France); Heer, Walt A. de [School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Berger, Claire [School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); CNRS, Institut Néel, BP166, 38042 Grenoble Cedex 9 (France)

    2016-03-07

    We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defects in heteroepitaxy, and the high mobility graphene film could readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. A 5–8 graphene-layer film is first grown on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Graphene is then patterned and arrays of 75-nm-wide openings are etched in graphene revealing the SiC substrate. A 30-nm-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in the openings patterned through graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal wurtzite. The GaN crystalline nanomesas have no threading dislocations or V-pits. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene/silicon carbide platform.

  12. Suppressed compressibility of quantum Hall effect edge states in epitaxial graphene on SiC

    Science.gov (United States)

    Slizovskiy, Sergey; Fal'ko, Vladimir I.

    2018-02-01

    We determine conditions for the formation of compressible stripes near the quantum Hall effect (QHE) edges of top-gated epitaxial graphene on Si-terminated SiC (G/SiC) and compare those to graphene exfoliated onto insulating substrate in the field-effect-transistor (GraFET) geometry. For G/SiC, a large density of localized surface states on SiC just underneath graphene layer and charge transfer between them lead both to doping of graphene and to screening of potential profile near its edge. This suppresses formation of compressible stripes near QHE edges in graphene, making them much narrower than the corresponding compressible stripes in GraFETs.

  13. Highly selective covalent organic functionalization of epitaxial graphene

    Science.gov (United States)

    Bueno, Rebeca A.; Martínez, José I.; Luccas, Roberto F.; Del Árbol, Nerea Ruiz; Munuera, Carmen; Palacio, Irene; Palomares, Francisco J.; Lauwaet, Koen; Thakur, Sangeeta; Baranowski, Jacek M.; Strupinski, Wlodek; López, María F.; Mompean, Federico; García-Hernández, Mar; Martín-Gago, José A.

    2017-05-01

    Graphene functionalization with organics is expected to be an important step for the development of graphene-based materials with tailored electronic properties. However, its high chemical inertness makes difficult a controlled and selective covalent functionalization, and most of the works performed up to the date report electrostatic molecular adsorption or unruly functionalization. We show hereafter a mechanism for promoting highly specific covalent bonding of any amino-terminated molecule and a description of the operating processes. We show, by different experimental techniques and theoretical methods, that the excess of charge at carbon dangling-bonds formed on single-atomic vacancies at the graphene surface induces enhanced reactivity towards a selective oxidation of the amino group and subsequent integration of the nitrogen within the graphene network. Remarkably, functionalized surfaces retain the electronic properties of pristine graphene. This study opens the door for development of graphene-based interfaces, as nano-bio-hybrid composites, fabrication of dielectrics, plasmonics or spintronics.

  14. The role of electron-electron repulsion in the problem of epitaxial graphene on a metal: Simple estimates

    Science.gov (United States)

    Davydov, S. Yu.

    2017-08-01

    For single-layer graphene placed on a metal substrate, the influence of intra- and interatomic Coulomb repulsion of electrons ( U and G, respectively) on its phase diagram is considered in the framework of an extended Hartree-Fock theory. The general solution of the problem is presented, on the basis of which special cases allowing for analytical consideration are analyzed: free and epitaxial graphene with and without regard for the energy of the electron transition between neighboring atoms of graphene. Three regions of the phase diagram are considered: spin and charge density waves (SDW and CDW, respectively) and the semimetal (SM) state uniform in the spin and charge. The main attention is paid to undoped graphene. It is shown that the allowance for the interaction with a metal substrate expands the SM existence domain. However, in all the considered cases, the boundary between the SDW and CDW states is described by the equation U = zG, where z = 3 is the number of nearest neighbors in graphene. The widening of the SM state region also results from the doping of graphene, and the effect is independent of the sign of free carriers introduced into epitaxial graphene by the substrate. According to estimates made, the only state possible in the buffer layer is the metal-type SM state, whereas, in epitaxial graphene, the CDW state is possible. The influence of temperature on the phase diagram of epitaxial graphene is discussed.

  15. Quasi-free-standing bilayer epitaxial graphene field-effect transistors on 4H-SiC (0001) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Yu, C.; Li, J.; Song, X. B.; Liu, Q. B.; Cai, S. J.; Feng, Z. H., E-mail: ga917vv@163.com [National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051 (China); He, Z. Z. [National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051 (China); School of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300130 (China)

    2016-01-04

    Quasi-free-standing epitaxial graphene grown on wide band gap semiconductor SiC demonstrates high carrier mobility and good material uniformity, which make it promising for graphene-based electronic devices. In this work, quasi-free-standing bilayer epitaxial graphene is prepared and its transistors with gate lengths of 100 nm and 200 nm are fabricated and characterized. The 100 nm gate length graphene transistor shows improved DC and RF performances including a maximum current density I{sub ds} of 4.2 A/mm, and a peak transconductance g{sub m} of 2880 mS/mm. Intrinsic current-gain cutoff frequency f{sub T} of 407 GHz is obtained. The exciting DC and RF performances obtained in the quasi-free-standing bilayer epitaxial graphene transistor show the great application potential of this material system.

  16. Spintronics and thermoelectrics in exfoliated and epitaxial graphene

    NARCIS (Netherlands)

    van den Berg, Jan Jasper

    2016-01-01

    This thesis is about two subjects: graphene spintronics and graphene thermoelectrics. Spintronics is about the creation and manipulation of spin currents. These are electrical currents in which we can control the spin orientation (up or down) of the conduction electrons. The second subject,

  17. Controlling the growth of epitaxial graphene on metalized diamond (111) surface

    International Nuclear Information System (INIS)

    Cooil, S. P.; Wells, J. W.; Hu, D.; Evans, D. A.; Niu, Y. R.; Zakharov, A. A.; Bianchi, M.

    2015-01-01

    The 2-dimensional transformation of the diamond (111) surface to graphene has been demonstrated using ultrathin Fe films that catalytically reduce the reaction temperature needed for the conversion of sp 3 to sp 2 carbon. An epitaxial system is formed, which involves the re-crystallization of carbon at the Fe/vacuum interface and that enables the controlled growth of monolayer and multilayer graphene films. In order to study the initial stages of single and multilayer graphene growth, real time monitoring of the system was preformed within a photoemission and low energy electron microscope. It was found that the initial graphene growth occurred at temperatures as low as 500 °C, whilst increasing the temperature to 560 °C was required to produce multi-layer graphene of high structural quality. Angle resolved photoelectron spectroscopy was used to study the electronic properties of the grown material, where a graphene-like energy momentum dispersion was observed. The Dirac point for the first layer is located at 2.5 eV below the Fermi level, indicating an n-type doping of the graphene due to substrate interactions, while that of the second graphene layer lies close to the Fermi level

  18. Atomic oxidation of large area epitaxial graphene on 4H-SiC(0001)

    International Nuclear Information System (INIS)

    Velez-Fort, E.; Ouerghi, A.; Silly, M. G.; Sirtti, F.; Eddrief, M.; Marangolo, M.; Shukla, A.

    2014-01-01

    Structural and electronic properties of epitaxial graphene on 4H-SiC were studied before and after an atomic oxidation process. X-ray photoemission spectroscopy indicates that oxygen penetrates into the substrate and decouples a part of the interface layer. Raman spectroscopy demonstrates the increase of defects due to the presence of oxygen. Interestingly, we observed on the near edge x-ray absorption fine structure spectra a splitting of the π* peak into two distinct resonances centered at 284.7 and 285.2 eV. This double structure smears out after the oxidation process and permits to probe the interface architecture between graphene and the substrate

  19. Complex Magnetic Exchange Coupling between Co Nanostructures and Ni(111) across Epitaxial Graphene.

    Science.gov (United States)

    Barla, Alessandro; Bellini, Valerio; Rusponi, Stefano; Ferriani, Paolo; Pivetta, Marina; Donati, Fabio; Patthey, François; Persichetti, Luca; Mahatha, Sanjoy K; Papagno, Marco; Piamonteze, Cinthia; Fichtner, Simon; Heinze, Stefan; Gambardella, Pietro; Brune, Harald; Carbone, Carlo

    2016-01-26

    We report on the magnetic coupling between isolated Co atoms as well as small Co islands and Ni(111) mediated by an epitaxial graphene layer. X-ray magnetic circular dichroism and scanning tunneling microscopy combined with density functional theory calculations reveal that Co atoms occupy two distinct adsorption sites, with different magnetic coupling to the underlying Ni(111) surface. We further report a transition from an antiferromagnetic to a ferromagnetic coupling with increasing Co cluster size. Our results highlight the extreme sensitivity of the exchange interaction mediated by graphene to the adsorption site and to the in-plane coordination of the magnetic atoms.

  20. Voltage-controlled inversion of tunnel magnetoresistance in epitaxial nickel/graphene/MgO/cobalt junctions

    Energy Technology Data Exchange (ETDEWEB)

    Godel, F.; Doudin, B.; Henry, Y.; Halley, D., E-mail: halley@ipcms.unistra.fr, E-mail: dayen@ipcms.unistra.fr; Dayen, J.-F., E-mail: halley@ipcms.unistra.fr, E-mail: dayen@ipcms.unistra.fr [Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504 CNRS-UdS, 23 rue du Loess, 67034 Strasbourg (France); Venkata Kamalakar, M. [Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504 CNRS-UdS, 23 rue du Loess, 67034 Strasbourg (France); Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg (Sweden)

    2014-10-13

    We report on the fabrication and characterization of vertical spin-valve structures using a thick epitaxial MgO barrier as spacer layer and a graphene-passivated Ni film as bottom ferromagnetic electrode. The devices show robust and scalable tunnel magnetoresistance, with several changes of sign upon varying the applied bias voltage. These findings are explained by a model of phonon-assisted transport mechanisms that relies on the peculiarity of the band structure and spin density of states at the hybrid graphene|Ni interface.

  1. Detecting the local transport properties and the dimensionality of transport of epitaxial graphene by a multi-point probe approach

    DEFF Research Database (Denmark)

    Barreto, Lucas; Perkins, Edward; Johannsen, Jens

    2013-01-01

    The electronic transport properties of epitaxial monolayer graphene (MLG) and hydrogen-intercalated quasi free-standing bilayer graphene (QFBLG) on SiC(0001) are investigated by micro multi-point probes. Using a probe with 12 contacts, we perform four-point probe measurements with the possibility...

  2. A visualization method for probing grain boundaries of single layer graphene via molecular beam epitaxy

    Science.gov (United States)

    Zhan, Linjie; Wan, Wen; Zhu, Zhenwei; Zhao, Zhijuan; Zhang, Zhenhan; Shih, Tien-Mo; Cai, Weiwei

    2017-07-01

    Graphene, a member of layered two-dimensional (2D) materials, possesses high carrier mobility, mechanical flexibility, and optical transparency, as well as enjoying a wide range of promising applications in electronics. Adopting the chemical vaporization deposition method, the majority of investigators have ubiquitously grown single layer graphene (SLG), which inevitably involves polycrystalline properties. Here we demonstrate a simple method for the direct visualization of arbitrarily large-size SLG domains by synthesizing one-hundred-nm-scale MoS2 single crystals via a high-vacuum molecular beam epitaxy process. The present study based on epitaxial growth provides a guide for probing the grain boundaries of various 2D materials and implements higher potentials for the next-generation electronic devices.

  3. Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates

    Directory of Open Access Journals (Sweden)

    Wan Sik Hwang

    2015-01-01

    Full Text Available We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs of ∼10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ∼0.14 eV. Contrary to prior observations of disordered transport and severe edge-roughness effects of graphene nanoribbons (GNRs, the experimental results presented here clearly show that the transport mechanism in carefully fabricated GNRFETs is conventional band-transport at room temperature and inter-band tunneling at low temperature. The entire space of temperature, size, and geometry dependent transport properties and electrostatics of the GNRFETs are explained by a conventional thermionic emission and tunneling current model. Our combined experimental and modeling work proves that carefully fabricated narrow GNRs behave as conventional semiconductors and remain potential candidates for electronic switching devices.

  4. Approaching the Dirac point in high-mobility multilayer epitaxial graphene

    Czech Academy of Sciences Publication Activity Database

    Orlita, Milan; Faugeras, C.; Plochocka, P.; Neugebauer, P.; Martinez, G.; Maude, D. K.; Barra, A. L.; Sprinkle, M.; Berger, C.; de Heer, W.A.; Potemski, M.

    2008-01-01

    Roč. 101, č. 26 (2008), 267601/1-267601/4 ISSN 0031-9007 R&D Projects: GA AV ČR KAN400100652 Grant - others:EU(XE) RITA-CT-2003-505474 Institutional research plan: CEZ:AV0Z10100521 Keywords : multilayer epitaxial graphene * Dirac fermions * magnetic field Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.180, year: 2008

  5. Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions

    OpenAIRE

    Weingart, S.; Bock, C.; Kunze, U.; Speck, F.; Seyller, Th.; Ley, L.

    2009-01-01

    We report on the observation of inertial-ballistic transport in nanoscale cross junctions fabricated from epitaxial graphene grown on SiC(0001). Ballistic transport is indicated by a negative bend resistance of R12,43 ~ 170 ohm which is measured in a non-local, four-terminal configuration at 4.2 K and which vanishes as the temperature is increased above 80 K.

  6. Ultrahard carbon film from epitaxial two-layer graphene

    Science.gov (United States)

    Gao, Yang; Cao, Tengfei; Cellini, Filippo; Berger, Claire; de Heer, Walter A.; Tosatti, Erio; Riedo, Elisa; Bongiorno, Angelo

    2018-02-01

    Atomically thin graphene exhibits fascinating mechanical properties, although its hardness and transverse stiffness are inferior to those of diamond. So far, there has been no practical demonstration of the transformation of multilayer graphene into diamond-like ultrahard structures. Here we show that at room temperature and after nano-indentation, two-layer graphene on SiC(0001) exhibits a transverse stiffness and hardness comparable to diamond, is resistant to perforation with a diamond indenter and shows a reversible drop in electrical conductivity upon indentation. Density functional theory calculations suggest that, upon compression, the two-layer graphene film transforms into a diamond-like film, producing both elastic deformations and sp2 to sp3 chemical changes. Experiments and calculations show that this reversible phase change is not observed for a single buffer layer on SiC or graphene films thicker than three to five layers. Indeed, calculations show that whereas in two-layer graphene layer-stacking configuration controls the conformation of the diamond-like film, in a multilayer film it hinders the phase transformation.

  7. Multilayer epitaxial graphene grown on the (SiC 000 1-bar) surface; structure and electronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Sprinkle, M; Hicks, J; Tinkey, H; Clark, M C; Hass, J; Conrad, E H [The Georgia Institute of Technology, Atlanta, Georgia 30332-0430 (United States); Tejeda, A [Institut Jean Lamour, CNRS - Univ. de Nancy - UPV-Metz, 54506 Vandoeuvre les Nancy (France); Taleb-Ibrahimi, A [UR1 CNRS/Synchrotron SOLEIL, Saint-Aubin, 91192 Gif sur Yvette (France); Le Fevre, P; Bertran, F [Synchrotron SOLEIL, L' Orme des Merisiers, Saint-Aubin, 91192 Gif sur Yvette (France); Soukiassian, P; Martinotti, D [Commissariat a l' Energie Atomique, SIMA, DSM-IRAMIS-SPCSI, Saclay, 91191 Gif sur Yvette (France)

    2010-09-22

    We review the progress towards developing epitaxial graphene as a material for carbon electronics. In particular, we discuss improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's (MEG's) electronic properties. Although graphene grown on both polar faces of SiC will be discussed, our discussions will focus on graphene grown on the (0 0 0 1-bar) C-face of SiC. The unique properties of C-face MEG have become apparent. These films behave electronically like a stack of nearly independent graphene sheets rather than a thin Bernal stacked graphite sample. The origins of multilayer graphene's electronic behaviour are its unique highly ordered stacking of non-Bernal rotated graphene planes. While these rotations do not significantly affect the inter-layer interactions, they do break the stacking symmetry of graphite. It is this broken symmetry that leads to each sheet behaving like isolated graphene planes.

  8. Weak localization in few-layer black phosphorus

    International Nuclear Information System (INIS)

    Du, Yuchen; Neal, Adam T; Zhou, Hong; Ye, Peide D

    2016-01-01

    We have conducted a comprehensive investigation into the magneto-transport properties of few-layer black phosphorus in terms of phase coherence length, phase coherence time, and mobility via weak localization measurement and Hall-effect measurement. We present magnetoresistance data showing the weak localization effect in bare p-type few-layer black phosphorus and reveal its strong dependence on temperature and carrier concentration. The measured weak localization agrees well with the Hikami–Larkin–Nagaoka model and the extracted phase coherence length of 104 nm at 350 mK, decreasing as ∼T −0.513+−0.053 with increased temperature. Weak localization measurement allows us to qualitatively probe the temperature-dependent phase coherence time τ ϕ , which is in agreement with the theory of carrier interaction in the diffusive regime. We also observe the universal conductance fluctuation phenomenon in few-layer black phosphorus within moderate magnetic field and low temperature regime. (paper)

  9. Sub-monolayer growth of titanium, cobalt, and palladium on epitaxial graphene

    Energy Technology Data Exchange (ETDEWEB)

    Sokolova, Anastasia; Kilchert, Franziska; Schneider, M. Alexander [Lehrstuhl fuer Festkoerperphysik, Friedrich-Alexander Universitaet Erlangen-Nuernberg (FAU), Erlangen (Germany); Link, Stefan; Stoehr, Alexander; Starke, Ulrich [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany)

    2017-11-15

    We deposited metals (Ti, Co, Pd) typically used as seed layers for contacts on epitaxial graphene on SiC(0001) and studied the early stages of growth in the sub-monolayer regime by Scanning Tunneling Microscopy (STM). All three metals do not wet the substrate and Ostwalt ripening occurs at temperatures below 400 K. The analysis of the epitaxial orientation of the metal adislands revealed their specific alignment to the graphene lattice. It is found that the apparent height of the islands as measured by STM strongly deviates from their true topographic height. This is interpreted as an indication of the presence of scattering processes within the metal particles that increase the transparency of the metal-graphene interface for electrons. Even large islands are easily picked up by the tip of the STM allowing insight into the bonding between metal island and graphene surface and into mechanisms leading to metal intercalation. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication

    Science.gov (United States)

    Habibpour, Omid; He, Zhongxia Simon; Strupinski, Wlodek; Rorsman, Niklas; Zirath, Herbert

    2017-02-01

    In recent years, the demand for high data rate wireless communications has increased dramatically, which requires larger bandwidth to sustain multi-user accessibility and quality of services. This can be achieved at millimeter wave frequencies. Graphene is a promising material for the development of millimeter-wave electronics because of its outstanding electron transport properties. Up to now, due to the lack of high quality material and process technology, the operating frequency of demonstrated circuits has been far below the potential of graphene. Here, we present monolithic integrated circuits based on epitaxial graphene operating at unprecedented high frequencies (80-100 GHz). The demonstrated circuits are capable of encoding/decoding of multi-gigabit-per-second information into/from the amplitude or phase of the carrier signal. The developed fabrication process is scalable to large wafer sizes.

  11. Structural consequences of hydrogen intercalation of epitaxial graphene on SiC(0001)

    Energy Technology Data Exchange (ETDEWEB)

    Emery, Jonathan D., E-mail: jdemery@anl.gov, E-mail: bedzyk@northwestern.edu; Johns, James E.; McBriarty, Martin E.; Hersam, Mark C. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Wheeler, Virginia H.; Kurt Gaskill, D. [U.S. Naval Research Laboratory, Washington, DC 20375 (United States); Detlefs, Blanka [ESRF—The European Synchrotron, CS 40220, 71, Avenue des Martyrs, 38043 Grenoble (France); Bedzyk, Michael J., E-mail: jdemery@anl.gov, E-mail: bedzyk@northwestern.edu [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208 (United States)

    2014-10-20

    The intercalation of various atomic species, such as hydrogen, to the interface between epitaxial graphene (EG) and its SiC substrate is known to significantly influence the electronic properties of the graphene overlayers. Here, we use high-resolution X-ray reflectivity to investigate the structural consequences of the hydrogen intercalation process used in the formation of quasi-free-standing (QFS) EG/SiC(0001). We confirm that the interfacial layer is converted to a layer structurally indistinguishable from that of the overlying graphene layers. This newly formed graphene layer becomes decoupled from the SiC substrate and, along with the other graphene layers within the film, is vertically displaced by ∼2.1 Å. The number of total carbon layers is conserved during the process, and we observe no other structural changes such as interlayer intercalation or expansion of the graphene d-spacing. These results clarify the under-determined structure of hydrogen intercalated QFS-EG/SiC(0001) and provide a precise model to inform further fundamental and practical understanding of the system.

  12. Epitaxial Graphene and Graphene–Based Devices Studied by Electrical Scanning Probe Microscopy

    Directory of Open Access Journals (Sweden)

    Tim L. Burnett

    2013-03-01

    Full Text Available We present local electrical characterization of epitaxial graphene grown on both Si- and C-faces of 4H-SiC using Electrostatic Force Microscopy and Kelvin Probe Force Microscopy in ambient conditions and at elevated temperatures. These techniques provide a straightforward identification of graphene domains with various thicknesses on the substrate where topographical determination is hindered by adsorbates and SiC terraces. We also use Electrostatic Force Spectroscopy which allows quantitative surface potential measurements with high spatial resolution. Using these techniques, we study evolution of a layer of atmospheric water as a function of temperature, which is accompanied by a significant change of the absolute surface potential difference. We show that the nanoscale wettability of the material is strongly dependent on the number of graphene layers, where hydrophobicity increases with graphene thickness. We also use micron-sized graphene Hall bars with gold electrodes to calibrate work function of the electrically conductive probe and precisely and quantitatively define the work functions for single- and double-layer graphene.

  13. Long- versus Short-Range Scattering in Doped Epitaxial Graphene.

    Science.gov (United States)

    Straßer, C; Ludbrook, B M; Levy, G; Macdonald, A J; Burke, S A; Wehling, T O; Kern, K; Damascelli, A; Ast, C R

    2015-05-13

    Tuning the electronic properties of graphene by adatom deposition unavoidably introduces disorder into the system, which directly affects the single-particle excitations and electrodynamics. Using angle-resolved photoemission spectroscopy (ARPES) we trace the evolution of disorder in graphene by thallium adatom deposition and probe its effect on the electronic structure. We show that the signatures of quasiparticle scattering in the photoemission spectral function can be used to identify thallium adatoms, although charged, as efficient short-range scattering centers. Employing a self-energy model for short-range scattering, we are able to extract a δ-like scattering potential δ = -3.2 ± 1 eV. Therefore, isolated charged scattering centers do not necessarily act just as good long-range (Coulomb) scatterers but can also act as efficient short-range (δ-like) scatterers; in the case of thallium, this happens with almost equal contributions from both mechanisms.

  14. X-ray radiation effects in multilayer epitaxial graphene

    Energy Technology Data Exchange (ETDEWEB)

    Hicks, Jeremy; Tinkey, Holly; Hankinson, John; Heer, Walt A. de; Conrad, Edward H. [School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Arora, Rajan; Kenyon, Eleazar; Chakraborty, Partha S.; Cressler, John D. [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Berger, Claire [School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); CNRS-Institut Neel, BP 166, 38042 Grenoble Cedex 9 (France)

    2011-12-05

    We characterize multilayer graphene grown on C-face SiC before and after exposure to a total ionizing dose of 12 Mrad(SiO{sub 2}) using a 10 keV x-ray source. While we observe the partial peeling of the top graphene layers and the appearance of a modest Raman D-peak, we find that the electrical characteristics (mobility, sheet resistivity, free carrier concentration) of the material are mostly unaffected by radiation exposure. Combined with x-ray photoelectron spectroscopy data showing numerous carbon-oxygen bonds after irradiation, we conclude that the primary damage mechanism is through surface etching from reactive oxygen species created by the x-rays.

  15. The crystal orientation relation and macroscopic surface roughness in hetero-epitaxial graphene grown on Cu/mica

    International Nuclear Information System (INIS)

    Qi, J L; Nagashio, K; Nishimura, T; Toriumi, A

    2014-01-01

    Clean, flat and orientation-identified graphene on a substrate is in high demand for graphene electronics. In this study, the hetero-epitaxial graphene growth on Cu(111)/mica(001) by chemical vapor deposition is investigated to check the applicability for top-gate insulator research on graphene, as well as graphene channel research, by transferring graphene on to SiO 2 /Si substrates. After adjusting the graphene growth conditions, the surface roughness of the graphene/Cu/mica substrate and the average smoothed areas are ∼0.34 nm and ∼100 μm 2 , respectively. The orientation of graphene in the graphene/Cu/mica substrate can be identified by the hexagonal void morphology of Cu. Moreover, we demonstrate a relatively high mobility of ∼4500 cm 2 V −1 s −1 in graphene transferred on the SiO 2 /Si substrate. These results suggest that the present graphene/Cu/mica substrate can be used for top-gate insulator research on graphene. (papers)

  16. Properties of copper (fluoro-)phthalocyanine layers deposited on epitaxial graphene.

    Science.gov (United States)

    Ren, Jun; Meng, Sheng; Wang, Yi-Lin; Ma, Xu-Cun; Xue, Qi-Kun; Kaxiras, Efthimios

    2011-05-21

    We investigate the atomic structure and electronic properties of monolayers of copper phthalocyanines (CuPc) deposited on epitaxial graphene substrate. We focus in particular on hexadecafluorophthalocyanine (F(16)CuPc), using both theoretical and experimental (scanning tunneling microscopy - STM) studies. For the individual CuPc and F(16)CuPc molecules, we calculated the electronic and optical properties using density functional theory (DFT) and time-dependent DFT and found a red-shift in the absorption peaks of F(16)CuPc relative to those of CuPc. In F(16)CuPc, the electronic wavefunctions are more polarized toward the electronegative fluorine atoms and away from the Cu atom at the center of the molecule. When adsorbed on graphene, the molecules lie flat and form closely packed patterns: F(16)CuPc forms a hexagonal pattern with two well-ordered alternating α and β stripes while CuPc arranges into a square lattice. The competition between molecule-substrate and intermolecular van der Waals interactions plays a crucial role in establishing the molecular patterns leading to tunable electron transfer from graphene to the molecules. This transfer is controlled by the layer thickness of, or the applied voltage on, epitaxial graphene resulting in selective F(16)CuPc adsorption, as observed in STM experiments. In addition, phthalocyanine adsorption modifies the electronic structure of the underlying graphene substrate introducing intensity smoothing in the range of 2-3 eV below the Dirac point (E(D)) and a small peak in the density of states at ∼0.4 eV above E(D). © 2011 American Institute of Physics.

  17. Corrugated epitaxial graphene/SiC interfaces: photon excitation and probing

    Science.gov (United States)

    Tang, Xiaoduan; Xu, Shen; Wang, Xinwei

    2014-07-01

    Localized energy exchange and mechanical coupling across a few nm gap at a corrugated graphene-substrate interface remain great challenges to study. In this work, an infrared laser is used to excite an unconstrained epitaxial graphene/SiC interface to induce a local thermal non-equilibrium. The interface behavior is uncovered using a second laser beam for Raman excitation. Using Raman peaks for dual thermal probing, the temperature difference across a gap of just a few nm is determined precisely. The interfacial thermal conductance is found to be extremely low: 410 +/- 7 W m-2 K-1, indicating poor phonon transport across the interface. By decoupling of the graphene's mechanical and thermal behavior from the Raman wavenumber, the stress in graphene is found to be extremely low, uncovering its flexible mechanical behavior. Based on interface-enhanced Raman, it is found that the increment of interface separation between graphene and SiC can be as large as 2.9 nm when the local thermal equilibrium is destroyed.

  18. Few-layer MoS2 as nitrogen protective barrier

    Science.gov (United States)

    Akbali, B.; Yanilmaz, A.; Tomak, A.; Tongay, S.; Çelebi, C.; Sahin, H.

    2017-10-01

    We report experimental and theoretical investigations of the observed barrier behavior of few-layer MoS2 against nitrogenation. Owing to its low-strength shearing, low friction coefficient, and high lubricity, MoS2 exhibits the demeanor of a natural N-resistant coating material. Raman spectroscopy is done to determine the coating capability of MoS2 on graphene. Surface morphology of our MoS2/graphene heterostructure is characterized by using optical microscopy, scanning electron microscopy, and atomic force microscopy. In addition, density functional theory-based calculations are performed to understand the energy barrier performance of MoS2 against nitrogenation. The penetration of nitrogen atoms through a defect-free MoS2 layer is prevented by a very high vertical diffusion barrier, indicating that MoS2 can serve as a protective layer for the nitrogenation of graphene. Our experimental and theoretical results show that MoS2 material can be used both as an efficient nanocoating material and as a nanoscale mask for selective nitrogenation of graphene layer.

  19. Charge-carrier transport in large-area epitaxial graphene

    Energy Technology Data Exchange (ETDEWEB)

    Kisslinger, Ferdinand; Popp, Matthias; Weber, Heiko B. [Lehrstuhl fuer Angewandte Physik, Friedrich-Alexander-Universitaet Erlangen-Nuernberg (FAU), Erlangen (Germany); Jobst, Johannes [Huygens-Kamerlingh Onnes Laboratorium, Leiden Institute of Physics, Leiden University (Netherlands); Shallcross, Sam [Lehrstuhl fuer theoretische Festkoerperphysik, Friedrich-Alexander-Universitaet Erlangen-Nuernberg (FAU), Erlangen (Germany)

    2017-11-15

    We present an overview of recent charge carrier transport experiments in both monolayer and bilayer graphene, with emphasis on the phenomena that appear in large-area samples. While many aspects of transport are based on quantum mechanical concepts, in the large-area limit classical corrections dominate and shape the magnetoresistance and the tunneling conductance. The discussed phenomena are very general and can, with little modification, be expected in any atomically thin 2D conductor. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Nickel enhanced graphene growth directly on dielectric substrates by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Wofford, Joseph M., E-mail: joewofford@gmail.com, E-mail: lopes@pdi-berlin.de; Lopes, Joao Marcelo J., E-mail: joewofford@gmail.com, E-mail: lopes@pdi-berlin.de; Riechert, Henning [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Speck, Florian; Seyller, Thomas [Technische Universität Chemnitz, Institut für Physik, Reichenhainer Str. 70, 09126 Chemnitz (Germany)

    2016-07-28

    The efficacy of Ni as a surfactant to improve the crystalline quality of graphene grown directly on dielectric Al{sub 2}O{sub 3}(0001) substrates by molecular beam epitaxy is examined. Simultaneously exposing the substrate to a Ni flux throughout C deposition at 950 °C led to improved charge carrier mobility and a Raman spectrum indicating less structural disorder in the resulting nanocrystalline graphene film. X-ray photoelectron spectroscopy confirmed that no residual Ni could be detected in the film and showed a decrease in the intensity of the defect-related component of the C1s level. Similar improvements were not observed when a lower substrate temperature (850 °C) was used. A close examination of the Raman spectra suggests that Ni reduces the concentration of lattice vacancies in the film, possibly by catalytically assisting adatom incorporation.

  1. Electronic and geometric corrugation of periodically rippled, self-nanostructured graphene epitaxially grown on Ru(0001)

    Energy Technology Data Exchange (ETDEWEB)

    Borca, Bogdana; Barja, Sara; Garnica, Manuela; Rodriguez-GarcIa, Josefa M; Hinarejos, Juan Jose; FarIas, Daniel; Parga, Amadeo L Vazquez de; Miranda, Rodolfo [Departamento de Fisica de la Materia Condensada, Universidad Autonoma de Madrid, Cantoblanco 28049, Madrid (Spain); Minniti, Marina; Politano, Antonio, E-mail: al.vazquezdeparga@uam.e [Instituto Madrileno de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), Cantoblanco 28049, Madrid (Spain)

    2010-09-15

    Graphene epitaxially grown on Ru(0001) displays a remarkably ordered pattern of hills and valleys in scanning tunneling microscopy (STM) images. The extent to which the observed 'ripples' are structural or electronic in origin has been much disputed recently. A combination of ultrahigh-resolution STM images and helium atom diffraction data shows that (i) the graphene lattice is rotated with respect to the lattice of Ru and (ii) the structural corrugation as determined from He diffraction is substantially smaller (0.15 A) than predicted (1.5 A) or reported from x-ray diffraction or low-energy electron diffraction. The electronic corrugation, on the contrary, is strong enough to invert the contrast between hills and valleys above +2.6 V as new, spatially localized electronic states enter the energy window of the STM. The large electronic corrugation results in a nanostructured periodic landscape of electron and hole pockets.

  2. Direct experimental evidence for the reversal of carrier type upon hydrogen intercalation in epitaxial graphene/SiC(0001)

    Energy Technology Data Exchange (ETDEWEB)

    Rajput, S., E-mail: srajput@uwm.edu; Li, Y. Y.; Li, L. [Department of Physics, University of Wisconsin, Milwaukee, Wisconsin 53211 (United States)

    2014-01-27

    Raman spectroscopy and scanning tunneling microscopy/spectroscopy measurements are performed to determine the atomic structure and electronic properties of H-intercalated graphene/SiC(0001) obtained by annealing the as-grown epitaxial graphene in hydrogen atmosphere. While the as-grown graphene is found to be n-type with the Dirac point (E{sub D}) at 450 and 350 meV below Fermi level for the 1st and 2nd layer, the H-intercalated graphene is p-type with E{sub D} at 320 and 200 meV above. In addition, ripples are observed in the now quasi-free standing graphene decoupled from the SiC substrate. This causes fluctuations in the Dirac point that directly follow the undulations of the ripples, resulting in electron and hole puddles in the H-intercalated graphene/SiC(0001)

  3. Investigation of structural and electronic properties of epitaxial graphene on 3C–SiC(100)/Si(100) substrates

    Science.gov (United States)

    Gogneau, Noelle; Ben Gouider Trabelsi, Amira; Silly, Mathieu G; Ridene, Mohamed; Portail, Marc; Michon, Adrien; Oueslati, Mehrezi; Belkhou, Rachid; Sirotti, Fausto; Ouerghi, Abdelkarim

    2014-01-01

    Graphene has been intensively studied in recent years in order to take advantage of its unique properties. Its synthesis on SiC substrates by solid-state graphitization appears a suitable option for graphene-based electronics. However, before developing devices based on epitaxial graphene, it is desirable to understand and finely control the synthesis of material with the most promising properties. To achieve these prerequisites, many studies are being conducted on various SiC substrates. Here, we review 3C–SiC(100) epilayers grown by chemical vapor deposition on Si(100) substrates for producing graphene by solid state graphitization under ultrahigh-vacuum conditions. Based on various characterization techniques, the structural and electrical properties of epitaxial graphene layer grown on 3C–SiC(100)/Si(100) are discussed. We establish that epitaxial graphene presents properties similar to those obtained using hexagonal SiC substrates, with the advantage of being compatible with current Si-processing technology. PMID:25339846

  4. Adsorption properties of CoPc molecule on epitaxial graphene/Ru(0 0 0 1)

    International Nuclear Information System (INIS)

    Cai, Yiliang; Zhang, Hanjie; Song, Junjie; Zhang, Yuxi; Bao, Shining; He, Pimo

    2015-01-01

    Graphical abstract: - Highlights: • The adsorption behavior of CoPc on MG/Ru(0 0 0 1) was investigated by STM and DFT. • The impact of the defect in MG/Ru(0 0 0 1) on the adsorption properties was studied. • A central contrast was found for CoPcs adsorbed on intact and defective graphene. - Abstract: Combining the scanning tunneling microscopy (STM) and density functional theory (DFT), the adsorption properties of cobalt phthalocyanine (CoPc) on monolayer graphene/Ru(0 0 0 1) [MG/Ru(0 0 0 1)] have been investigated. At monolayer coverage, CoPc forms an ordered Kagome lattice, and a slight deformation for one lobe of CoPc and charge transfer from CoPc to Ru(0 0 0 1) substrate take place. The existence of the defect (vacancy) in graphene on Ru(0 0 0 1) increases the coupling between the Ru substrate and the epitaxial graphene. Such an increase of the coupling brings about an overall CoPc molecular energy level shift toward the low binding energy, which subsequently results in a central topographical contrast between the CoPc molecules on the intact and defective MG/Ru(0 0 0 1)

  5. Quasi free-standing epitaxial graphene fabrication on 3C-SiC/Si(111)

    Science.gov (United States)

    Amjadipour, Mojtaba; Tadich, Anton; Boeckl, John J.; Lipton-Duffin, Josh; MacLeod, Jennifer; Iacopi, Francesca; Motta, Nunzio

    2018-04-01

    Growing graphene on SiC thin films on Si is a cheaper alternative to the growth on bulk SiC, and for this reason it has been recently intensively investigated. Here we study the effect of hydrogen intercalation on epitaxial graphene obtained by high temperature annealing on 3C-SiC/Si(111) in ultra-high vacuum. By using a combination of core-level photoelectron spectroscopy, low energy electron diffraction, and near-edge x-ray absorption fine structure (NEXAFS) we find that hydrogen saturates the Si atoms at the topmost layer of the substrate, leading to free-standing graphene on 3C-SiC/Si(111). The intercalated hydrogen fully desorbs after heating the sample at 850 °C and the buffer layer appears again, similar to what has been reported for bulk SiC. However, the NEXAFS analysis sheds new light on the effect of hydrogen intercalation, showing an improvement of graphene’s flatness after annealing in atomic H at 600 °C. These results provide new insight into free-standing graphene fabrication on SiC/Si thin films.

  6. An atomic carbon source for high temperature molecular beam epitaxy of graphene.

    Science.gov (United States)

    Albar, J D; Summerfield, A; Cheng, T S; Davies, A; Smith, E F; Khlobystov, A N; Mellor, C J; Taniguchi, T; Watanabe, K; Foxon, C T; Eaves, L; Beton, P H; Novikov, S V

    2017-07-26

    We report the use of a novel atomic carbon source for the molecular beam epitaxy (MBE) of graphene layers on hBN flakes and on sapphire wafers at substrate growth temperatures of ~1400 °C. The source produces a flux of predominantly atomic carbon, which diffuses through the walls of a Joule-heated tantalum tube filled with graphite powder. We demonstrate deposition of carbon on sapphire with carbon deposition rates up to 12 nm/h. Atomic force microscopy measurements reveal the formation of hexagonal moiré patterns when graphene monolayers are grown on hBN flakes. The Raman spectra of the graphene layers grown on hBN and sapphire with the sublimation carbon source and the atomic carbon source are similar, whilst the nature of the carbon aggregates is different - graphitic with the sublimation carbon source and amorphous with the atomic carbon source. At MBE growth temperatures we observe etching of the sapphire wafer surface by the flux from the atomic carbon source, which we have not observed in the MBE growth of graphene with the sublimation carbon source.

  7. In silico carbon molecular beam epitaxial growth of graphene on the h-BN substrate: carbon source effect on van der Waals epitaxy

    Science.gov (United States)

    Lee, Jonghoon; Varshney, Vikas; Park, Jeongho; Farmer, Barry L.; Roy, Ajit K.

    2016-05-01

    Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon molecular beam epitaxy (CMBE) techniques using solid carbon sublimation have reported relatively poor quality of the graphene. In this article, the CMBE growth of graphene on the h-BN substrate is numerically studied in order to identify the effect of the carbon source on the quality of the graphene film. The carbon molecular beam generated by the sublimation of solid carbon source materials such as graphite and glassy carbon is mostly composed of atomic carbon, carbon dimers and carbon trimers. Therefore, the graphene film growth becomes a complex process involving various deposition characteristics of a multitude of carbon entities. Based on the study of surface adsorption and film growth characteristics of these three major carbon entities comprising graphite vapour, we report that carbon trimers convey strong traits of vdW epitaxy prone to high quality graphene growth, while atomic carbon deposition is a surface-reaction limited process accompanied by strong chemisorption. The vdW epitaxial behaviour of carbon trimers is found to be substantial enough to nucleate and develop into graphene like planar films within a nanosecond of high flux growth simulation, while reactive atomic carbons tend to impair the structural integrity of the crystalline h-BN substrate upon deposition to form an amorphous interface between the substrate and the growing carbon film. The content of reactive atomic carbons in the molecular beam is suspected to be the primary cause of low quality graphene reported in the literature. A possible optimization of the molecular beam composition towards the synthesis of better quality graphene films is suggested.Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon

  8. Raman and morphology visualization in epitaxial graphene on 4H-SiC by Nitrogen or Argon ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Jin-Hua, E-mail: zhaojinhuazjh@gmail.com [School of Science, Shandong Jianzhu University, Jinan 250101 (China); Qin, Xi-Feng; Wang, Feng-Xiang; Fu, Gang [School of Science, Shandong Jianzhu University, Jinan 250101 (China); Wang, Xue-Lin [School of Physics, Key Laboratory of Particle Physics and Particle Irradiation, Ministry of Education, and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 (China)

    2015-12-15

    Graphene is a one-atom-thick planar sheet of carbon atoms that are densely packed into a honeycomb crystal lattice and is attracting tremendous interest since being discovered in 2004. Epitaxial growth of graphene on silicon carbide (SiC) is an effective method to obtain high quality layers. In this work, the effects of irradiation on epitaxial SiC/graphene were studied. The samples were irradiated with Nitrogen and Argon ions at an energy of 200 keV and different fluence with 4 × 10{sup 12} ions/cm{sup 2} to 1 × 10{sup 13} ions/cm{sup 2}. The results of Raman measurements indicate that ion beam irradiation causes defects and disorder in the graphene crystal structure, and the level of defects increases with increasing ion fluence. Surface morphology images are obtained by atomic force microscope (AFM). This work is valuable for the potential application of epitaxial graphene on SiC in the field of optoelectronics devices.

  9. Molecular Beam Epitaxial Growth and Characterization of Graphene and Hexagonal Boron Nitride Two-Dimensional Layers

    Science.gov (United States)

    Zheng, Renjing

    Van der Waals (vdW) materials (also called as two-dimensional (2D) material in some literature) systems have received extensive attention recently due to their potential applications in next-generation electronics platform. Exciting properties have been discovered in this field, however, the performance and properties of the systems rely on the materials' quality and interface significantly, leading to the urgent need for scalable synthesis of high-quality vdW crystals and heterostructures. Toward this direction, this dissertation is devoted on the study of Molecular Beam Epitaxy (MBE) growth and various characterization of vdW materials and heterostructures, especially graphene and hexagonal boron nitride (h-BN). The goal is to achieve high-quality vdW materials and related heterostructures. There are mainly four projects discussed in this dissertation. The first project (Chapter 2) is about MBE growth of large-area h-BN on copper foil. After the growth, the film was transferred onto SiO2 substrate for characterization. It is observed that as-grown film gives evident h-BN Raman spectrum; what's more, h-BN peak intensity and position is dependent on film thickness. N-1s and B-1s XPS peaks further suggest the formation of h-BN. AFM and SEM images show the film is flat and continuous over large area. Our synthesis method shows it's possible to use MBE to achieve h-BN growth and could also pave a way for some unique structure, such as h-BN/graphene heterostructures and doped h-BN films by MBE. The second project (Chapter 3) is focused on establishment of grapehene/h-BN heterostructure on cobalt (Co) film. In-situ epitaxial growth of graphene/h-BN heterostructures on Co film substrate was achieved by using plasma-assisted MBE. The direct graphene/h-BN vertical stacking structures were demonstrated and further confirmed by various characterizations, such as Raman spectroscopy, SEM, XPS and TEM. Large area heterostructures consisting of single- /bilayer graphene and

  10. Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhongguang; Khanaki, Alireza; Tian, Hao; Zheng, Renjing; Suja, Mohammad; Liu, Jianlin, E-mail: jianlin@ece.ucr.edu [Quantum Structures Laboratory, Department of Electrical and Computer Engineering, University of California, Riverside, California 92521 (United States); Zheng, Jian-Guo [Irvine Materials Research Institute, University of California, Irvine, California 92697-2800 (United States)

    2016-07-25

    Graphene/hexagonal boron nitride (G/h-BN) heterostructures have attracted a great deal of attention because of their exceptional properties and wide variety of potential applications in nanoelectronics. However, direct growth of large-area, high-quality, and stacked structures in a controllable and scalable way remains challenging. In this work, we demonstrate the synthesis of h-BN/graphene (h-BN/G) heterostructures on cobalt (Co) foil by sequential deposition of graphene and h-BN layers using plasma-assisted molecular beam epitaxy. It is found that the coverage of h-BN layers can be readily controlled on the epitaxial graphene by growth time. Large-area, uniform-quality, and multi-layer h-BN films on thin graphite layers were achieved. Based on an h-BN (5–6 nm)/G (26–27 nm) heterostructure, capacitor devices with Co(foil)/G/h-BN/Co(contact) configuration were fabricated to evaluate the dielectric properties of h-BN. The measured breakdown electric field showed a high value of ∼2.5–3.2 MV/cm. Both I-V and C-V characteristics indicate that the epitaxial h-BN film has good insulating characteristics.

  11. Optical observation of different conformational isomers in rubrene ultra-thin molecular films on epitaxial graphene

    Energy Technology Data Exchange (ETDEWEB)

    Udhardt, Christian; Forker, Roman; Gruenewald, Marco [Friedrich Schiller University, Institute of Solid State Physics, Helmholtzweg 5, 07743 Jena (Germany); Watanabe, Yu; Yamada, Takashi; Ueba, Takahiro; Munakata, Toshiaki [Osaka University, Graduate School of Science, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043 (Japan); Fritz, Torsten, E-mail: torsten.fritz@uni-jena.de [Friedrich Schiller University, Institute of Solid State Physics, Helmholtzweg 5, 07743 Jena (Germany); Osaka University, Graduate School of Science, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043 (Japan)

    2016-01-01

    Optical differential reflectance spectroscopy in combination with low-energy electron diffraction and scanning tunneling microscopy is used to investigate (ultra-)thin rubrene films grown on epitaxial graphene. The optical absorption behavior is compared to thin films on graphite(0001), muscovite mica(0001), and amorphous glass. All the optical spectra can be explained by the presence of two different spectral components, namely a high-energy and a low-energy component. We assign these two optical species to two different conformations of the rubrene molecule. - Highlights: • Optical properties of ultra-thin rubrene films on various substrates obtained • Two molecular species which differ in their optical absorption were identified. • Different molecular conformations contribute to the optical absorption behavior.

  12. Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs

    Directory of Open Access Journals (Sweden)

    Jeong-S. Moon

    2013-07-01

    Full Text Available This paper investigates total ionizing dose (TID effects in top-gated epitaxial graphene field-effect-transistors (GFETs. Measurements reveal voltage shifts in the current-voltage (I-V characteristics and degradation of carrier mobility and minimum conductivity, consistent with the buildup of oxide-trapped charges. A semi-empirical approach for modeling radiation-induced degradation in GFETs effective carrier mobility is described in the paper. The modeling approach describes Coulomb and short-range scattering based on calculations of charge and effective vertical field that incorporate radiation-induced oxide trapped charges. The transition from the dominant scattering mechanism is correctly described as a function of effective field and oxide trapped charge density. Comparison with experimental data results in good qualitative agreement when including an empirical component to account for scatterer transparency in the low field regime.

  13. Vibrational spectra of nanowires measured using laser doppler vibrometry and STM studies of epitaxial graphene : an LDRD fellowship report.

    Energy Technology Data Exchange (ETDEWEB)

    Biedermann, Laura Butler

    2009-09-01

    MWNTs, their vibration spectra was more extensively studied. The thermal vibration spectra of Ag{sub 2}Ga nanoneedles was measured under both ambient and low-vacuum conditions. The operational deflection shapes of the vibrating Ag{sub 2}Ga nanoneedles was also measured, allowing confirmation of the eigenmodes of vibration. The modulus of the crystalline nanoneedles was 84.3 {+-} 1.0 GPa. Gas damping is the dominate mechanism of energy loss for nanowires oscillating under ambient conditions. The measured quality factors, Q, of oscillation are in line with theoretical predictions of air damping in the free molecular gas damping regime. In the free molecular regime, Q{sub gas} is linearly proportional to the density and diameter of the nanowire and inversely proportional to the air pressure. Since the density of the Ag{sub 2}Ga nanoneedles is three times that of the MWNTs, the Ag{sub 2}Ga nanoneedles have greater Q at atmospheric pressures. Our initial measurements of Q for Ag{sub 2}Ga nanoneedles in low-vacuum (10 Torr) suggest that the intrinsic Q of these nanoneedles may be on the order of 1000. The epitaxial carbon that grows after heating (000{bar 1}) silicon carbide (SiC) to high temperatures (1450-1600) in vacuum was also studied. At these high temperatures, the surface Si atoms sublime and the remaining C atoms reconstruct to form graphene. X-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM) were used to characterize the quality of the few-layer graphene (FLG) surface. The XPS studies were useful in confirming the graphitic composition and measuring the thickness of the FLG samples. STM studies revealed a wide variety of nanometer-scale features that include sharp carbon-rich ridges, moire superlattices, one-dimensional line defects, and grain boundaries. By imaging these features with atomic scale resolution, considerable insight into the growth mechanisms of FLG on the carbon-face of SiC is obtained.

  14. Raman Spectroscopy as a Tool to Address Individual Graphene Layers in Few-Layer Graphene

    Czech Academy of Sciences Publication Activity Database

    Kalbáč, Martin; Kong, J.; Dresselhaus, M. S.

    2012-01-01

    Roč. 116, č. 35 (2012), s. 19046-19050 ISSN 1932-7447 R&D Projects: GA AV ČR IAA400400911; GA MŠk ME09060; GA ČR GAP204/10/1677; GA ČR(CZ) GAP208/12/1062 Institutional support: RVO:61388955 Keywords : chemical vapor deposition * transistor * films Subject RIV: CG - Electrochemistry Impact factor: 4.814, year: 2012

  15. Electronic and structural characterizations of unreconstructed {0001} surfaces and the growth of graphene overlayers

    International Nuclear Information System (INIS)

    Emtsev, Konstantin

    2009-01-01

    The present work is focused on the characterization of the clean unreconstructed SiC{0001} surfaces and the growth of graphene overlayers thereon. Electronic properties of SiC surfaces and their interfaces with graphene and few layer graphene films were investigated by means of angle resolved photoelectron spectroscopy, X-ray photoelectron spectroscopy and low energy electron diffraction. Structural characterizations of the epitaxial graphene films grown on SiC were carried out by atomic force microscopy and low energy electron microscopy. Supplementary data was obtained by scanning tunneling microscopy. (orig.)

  16. Thickness-Dependent Dielectric Constant of Few-Layer In 2 Se 3 Nanoflakes

    KAUST Repository

    Wu, Di

    2015-11-17

    © 2015 American Chemical Society. The dielectric constant or relative permittivity (εr) of a dielectric material, which describes how the net electric field in the medium is reduced with respect to the external field, is a parameter of critical importance for charging and screening in electronic devices. Such a fundamental material property is intimately related to not only the polarizability of individual atoms but also the specific atomic arrangement in the crystal lattice. In this Letter, we present both experimental and theoretical investigations on the dielectric constant of few-layer In2Se3 nanoflakes grown on mica substrates by van der Waals epitaxy. A nondestructive microwave impedance microscope is employed to simultaneously quantify the number of layers and local electrical properties. The measured εr increases monotonically as a function of the thickness and saturates to the bulk value at around 6-8 quintuple layers. The same trend of layer-dependent dielectric constant is also revealed by first-principles calculations. Our results of the dielectric response, being ubiquitously applicable to layered 2D semiconductors, are expected to be significant for this vibrant research field.

  17. Band Gap Opening Induced by the Structural Periodicity in Epitaxial Graphene Buffer Layer.

    Science.gov (United States)

    N Nair, Maya; Palacio, Irene; Celis, Arlensiú; Zobelli, Alberto; Gloter, Alexandre; Kubsky, Stefan; Turmaud, Jean-Philippe; Conrad, Matthew; Berger, Claire; de Heer, Walter; Conrad, Edward H; Taleb-Ibrahimi, Amina; Tejeda, Antonio

    2017-04-12

    The epitaxial graphene buffer layer on the Si face of hexagonal SiC shows a promising band gap, of which the precise origin remains to be understood. In this work, we correlate the electronic to the atomic structure of the buffer layer by combining angle resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), and high-resolution scanning transmission electron microscopy (HR-STEM). We show that the band structure in the buffer has an electronic periodicity related to the structural periodicity observed in STM images and published X-ray diffraction. Our HR-STEM measurements show the bonding of the buffer layer to the SiC at specific locations separated by 1.5 nm. This is consistent with the quasi 6 × 6 periodic corrugation observed in the STM images. The distance between buffer C and SiC is 1.9 Å in the bonded regions and up to 2.8 Å in the decoupled regions, corresponding to a 0.9 Å corrugation of the buffer layer. The decoupled regions are sp 2 hybridized. Density functional tight binding (DFTB) calculations demonstrate the presence of a gap at the Dirac point everywhere in the buffer layer, even in the decoupled regions where the buffer layer has an atomic structure close to that of graphene. The surface periodicity also promotes band in the superperiodic Brillouin zone edges as seen by photoemission and confirmed by our calculations.

  18. Structural and electronic properties of epitaxial graphene on SiC(0 0 0 1): a review of growth, characterization, transfer doping and hydrogen intercalation

    International Nuclear Information System (INIS)

    Riedl, C; Coletti, C; Starke, U

    2010-01-01

    Graphene, a monoatomic layer of graphite, hosts a two-dimensional electron gas system with large electron mobilities which makes it a prospective candidate for future carbon nanodevices. Grown epitaxially on silicon carbide (SiC) wafers, large area graphene samples appear feasible and integration in existing device technology can be envisioned. This paper reviews the controlled growth of epitaxial graphene layers on SiC(0 0 0 1) and the manipulation of their electronic structure. We show that epitaxial graphene on SiC grows on top of a carbon interface layer that-although it has a graphite-like atomic structure-does not display the linear π-bands typical for graphene due to a strong covalent bonding to the substrate. Only the second carbon layer on top of this interface acts like monolayer graphene. With a further carbon layer, a graphene bilayer system develops. During the growth of epitaxial graphene on SiC(0 0 0 1) the number of graphene layers can be precisely controlled by monitoring the π-band structure. Experimental fingerprints for in situ growth control could be established. However, due to the influence of the interface layer, epitaxial graphene on SiC(0 0 0 1) is intrinsically n-doped and the layers have a long-range corrugation in their density of states. As a result, the Dirac point energy where the π-bands cross is shifted away from the Fermi energy, so that the ambipolar properties of graphene cannot be exploited. We demonstrate methods to compensate and eliminate this structural and electronic influence of the interface. We show that the band structure of epitaxial graphene on SiC(0 0 0 1) can be precisely tailored by functionalizing the graphene surface with tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) molecules. Charge neutrality can be achieved for mono- and bilayer graphene. On epitaxial bilayer graphene, where a band gap opens due to the asymmetric electric field across the layers imposed by the interface, the magnitude of this band gap

  19. Spiral growth of few-layer MoS{sub 2} by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Dong, X.; Yan, C.; Tomer, D.; Li, L., E-mail: lianli@uwm.edu [Department of Physics, University of Wisconsin, Milwaukee, Wisconsin 53211 (United States); Li, C. H. [Naval Research Laboratory, Washington, DC 20375 (United States)

    2016-08-01

    Growth spirals exhibit appealing properties due to a preferred layer stacking and lack of inversion symmetry. Here, we report spiral growth of MoS{sub 2} during chemical vapor deposition on SiO{sub 2}/Si and epitaxial graphene/SiC substrates, and their physical and electronic properties. We determine the layer-dependence of the MoS{sub 2} bandgap, ranging from 2.4 eV for the monolayer to a constant of 1.3 eV beyond the fifth layer. We further observe that spirals predominantly initiate at the step edges of the SiC substrate, based on which we propose a growth mechanism driven by screw dislocation created by the coalescence of two growth fronts at steps.

  20. Superior mechanical flexibility of phosphorene and few-layer black phosphorus

    Energy Technology Data Exchange (ETDEWEB)

    Wei, Qun [School of Physics and Optoelectronic Engineering, Xidian University, Xi' an 710071 (China); School of Letters and Sciences, Arizona State University, Mesa, Arizona 85212 (United States); Peng, Xihong, E-mail: Xihong.peng@asu.edu [School of Letters and Sciences, Arizona State University, Mesa, Arizona 85212 (United States)

    2014-06-23

    Recently, fabricated two dimensional (2D) phosphorene crystal structures have demonstrated great potential in applications of electronics. Mechanical strain was demonstrated to be able to significantly modify the electronic properties of phosphorene and few-layer black phosphorus. In this work, we employed first principles density functional theory calculations to explore the mechanical properties of phosphorene, including ideal tensile strength and critical strain. It was found that a monolayer phosphorene can sustain tensile strain up to 27% and 30% in the zigzag and armchair directions, respectively. This enormous strain limit of phosphorene results from its unique puckered crystal structure. We found that the tensile strain applied in the armchair direction stretches the pucker of phosphorene, rather than significantly extending the P-P bond lengths. The compromised dihedral angles dramatically reduce the required strain energy. Compared to other 2D materials, such as graphene, phosphorene demonstrates superior flexibility with an order of magnitude smaller Young's modulus. This is especially useful in practical large-magnitude-strain engineering. Furthermore, the anisotropic nature of phosphorene was also explored. We derived a general model to calculate the Young's modulus along different directions for a 2D system.

  1. Electronic and structural characterizations of unreconstructed {l_brace}0001{r_brace} surfaces and the growth of graphene overlayers

    Energy Technology Data Exchange (ETDEWEB)

    Emtsev, Konstantin

    2009-06-03

    The present work is focused on the characterization of the clean unreconstructed SiC{l_brace}0001{r_brace} surfaces and the growth of graphene overlayers thereon. Electronic properties of SiC surfaces and their interfaces with graphene and few layer graphene films were investigated by means of angle resolved photoelectron spectroscopy, X-ray photoelectron spectroscopy and low energy electron diffraction. Structural characterizations of the epitaxial graphene films grown on SiC were carried out by atomic force microscopy and low energy electron microscopy. Supplementary data was obtained by scanning tunneling microscopy. (orig.)

  2. Large Frequency Change with Thickness in Interlayer Breathing Mode—Significant Interlayer Interactions in Few Layer Black Phosphorus

    Science.gov (United States)

    Luo, Xin; Lu, Xin; Koon, Gavin Kok Wai; Castro Neto, Antonio H.; Özyilmaz, Barbaros; Xiong, Qihua; Quek, Su Ying

    2015-06-01

    Bulk black phosphorus (BP) consists of puckered layers of phosphorus atoms. Few-layer BP, obtained from bulk BP by exfoliation, is an emerging candidate as a channel material in post-silicon electronics. A deep understanding of its physical properties and its full range of applications are still being uncovered. In this paper, we present a theoretical and experimental investigation of phonon properties in few-layer BP, focusing on the low-frequency regime corresponding to interlayer vibrational modes. We show that the interlayer breathing mode A3g shows a large redshift with increasing thickness; the experimental and theoretical results agreeing well. This thickness dependence is two times larger than that in the chalcogenide materials such as few-layer MoS2 and WSe2, because of the significantly larger interlayer force constant and smaller atomic mass in BP. The derived interlayer out-of-plane force constant is about 50% larger than that in graphene and MoS2. We show that this large interlayer force constant arises from the sizable covalent interaction between phosphorus atoms in adjacent layers, and that interlayer interactions are not merely of the weak van der Waals type. These significant interlayer interactions are consistent with the known surface reactivity of BP, and have been shown to be important for electric-field induced formation of Dirac cones in thin film BP.

  3. Large Frequency Change with Thickness in Interlayer Breathing Mode--Significant Interlayer Interactions in Few Layer Black Phosphorus.

    Science.gov (United States)

    Luo, Xin; Lu, Xin; Koon, Gavin Kok Wai; Castro Neto, Antonio H; Özyilmaz, Barbaros; Xiong, Qihua; Quek, Su Ying

    2015-06-10

    Bulk black phosphorus (BP) consists of puckered layers of phosphorus atoms. Few-layer BP, obtained from bulk BP by exfoliation, is an emerging candidate as a channel material in post-silicon electronics. A deep understanding of its physical properties and its full range of applications are still being uncovered. In this paper, we present a theoretical and experimental investigation of phonon properties in few-layer BP, focusing on the low-frequency regime corresponding to interlayer vibrational modes. We show that the interlayer breathing mode A(3)g shows a large redshift with increasing thickness; the experimental and theoretical results agree well. This thickness dependence is two times larger than that in the chalcogenide materials, such as few-layer MoS2 and WSe2, because of the significantly larger interlayer force constant and smaller atomic mass in BP. The derived interlayer out-of-plane force constant is about 50% larger than that of graphene and MoS2. We show that this large interlayer force constant arises from the sizable covalent interaction between phosphorus atoms in adjacent layers and that interlayer interactions are not merely of the weak van der Waals type. These significant interlayer interactions are consistent with the known surface reactivity of BP and have been shown to be important for electric-field induced formation of Dirac cones in thin film BP.

  4. Electro-oxidized epitaxial graphene channel field-effect transistors with single-walled carbon nanotube thin film gate electrode.

    Science.gov (United States)

    Ramesh, Palanisamy; Itkis, Mikhail E; Bekyarova, Elena; Wang, Feihu; Niyogi, Sandip; Chi, Xiaoliu; Berger, Claire; de Heer, Walt; Haddon, Robert C

    2010-10-20

    We report the effect of electrochemical oxidation in nitric acid on the electronic properties of epitaxial graphene (EG) grown on silicon carbide substrates; we demonstrate the availability of an additional reaction channel in EG, which is not present in graphite but which facilitates the introduction of the reaction medium into the graphene galleries during electro-oxidation. The device performance of the chemically processed graphene was studied by patterning the EG wafers with two geometrically identical macroscopic channels; the electro-oxidized channel showed a logarithmic increase of resistance with decreasing temperature, which is ascribed to the scattering of charge carriers in a two-dimensional electronic gas, rather than the presence of an energy gap at the Fermi level. Field-effect transistors were fabricated on the electro-oxidized and pristine graphene channels using single-walled carbon nanotube thin film top gate electrodes, thereby allowing the study of the effect of oxidative chemistry on the transistor performance of EG. The electro-oxidized channel showed higher values for the on-off ratio and the mobility of the graphene field-effect transistor, which we ascribe to the availability of high-quality internal graphene layers after electro-oxidation of the more defective top layers. Thus, the present oxidative process provides a clear contrast with previously demonstrated covalent chemistry in which sp(3) hybridized carbon atoms are introduced into the graphitic transport layer of the lattice by carbon-carbon bond formation, thereby opening an energy gap.

  5. Narrow plasmon resonances enabled by quasi-freestanding bilayer epitaxial graphene

    Science.gov (United States)

    Daniels, Kevin M.; Jadidi, M. Mehdi; Sushkov, Andrei B.; Nath, Anindya; Boyd, Anthony K.; Sridhara, Karthik; Drew, H. Dennis; Murphy, Thomas E.; Myers-Ward, Rachael L.; Gaskill, D. Kurt

    2017-06-01

    Exploiting the underdeveloped terahertz range (~1012-1013 Hz) of the electromagnetic spectrum could advance many scientific fields (e.g. medical imaging for the identification of tumors and other biological tissues, non-destructive evaluation of hidden objects or ultra-broadband communication). Despite the benefits of operating in this regime, generation, detection and manipulation have proven difficult, as few materials have functional interactions with THz radiation. In contrast, graphene supports resonances in the THz regime through structural confinement of surface plasmons, which can lead to enhanced absorption. In prior work, the achievable plasmon resonances in such structures have been limited by multiple electron scattering mechanisms (i.e. large carrier scattering rates) which greatly broaden the resonance (>100 cm-1 3 THz). We report the narrowest room temperature Drude response to-date, 30 cm-1 (0.87 THz), obtained using quasi-free standing bilayer epitaxial graphene (QFS BLG) synthesized on (0 0 0 1)6H-SiC. This narrow response is due to a 4-fold increase in carrier mobility and improved thickness and electronic uniformity of QFS BLG. Moreover, QFS BLG samples patterned into microribbons targeting 1.8-5.7 THz plasmon resonances also exhibit low scattering rates (37-53 cm-1). Due to the improved THz properties of QFS BLG, the effects of e-beam processing on carrier scattering rates was determined and we found that fabrication conditions can be tuned to minimize the impact on optoelectronic properties. In addition, electrostatic gating of patterned QFS BLG shows narrow band THz amplitude modulation. Taken together, these properties of QFS BLG should facilitate future development of THz optoelectronic devices for monochromatic applications.

  6. Synthesis of few-layer, large area hexagonal-boron nitride by pulsed laser deposition

    International Nuclear Information System (INIS)

    Glavin, Nicholas R.; Jespersen, Michael L.; Check, Michael H.; Hu, Jianjun; Hilton, Al M.; Fisher, Timothy S.; Voevodin, Andrey A.

    2014-01-01

    Pulsed laser deposition (PLD) has been investigated as a technique for synthesis of ultra-thin, few-layer hexagonal boron nitride (h-BN) thin films on crystalline highly ordered pyrolytic graphite (HOPG) and sapphire (0001) substrates. The plasma-based processing technique allows for increased excitations of deposited atoms due to background nitrogen gas collisional ionizations and extended resonance time of the energetic species presence at the condensation surface. These processes permit growth of thin, polycrystalline h-BN at 700 °C, a much lower temperature than that required by traditional growth methods. Analysis of the as-deposited films reveals epitaxial-like growth on the nearly lattice matched HOPG substrate, resulting in a polycrystalline h-BN film, and amorphous BN (a-BN) on the sapphire substrates, both with thicknesses of 1.5–2 nm. Stoichiometric films with boron-to-nitrogen ratios of unity were achieved by adjusting the background pressure within the deposition chamber and distance between the target and substrate. The reduction in deposition temperature and formation of stoichiometric, large-area h-BN films by PLD provide a process that is easily scaled-up for two-dimensional dielectric material synthesis and also present a possibility to produce very thin and uniform a-BN. - Highlights: • PLD was used to synthesize boron nitride thin films on HOPG and sapphire substrates. • Lattice matched substrate allowed for formation of polycrystalline h-BN. • Nitrogen gas pressure directly controlled film chemistry and structure. • Technique allows for ultrathin, uniform films at reduced processing temperatures

  7. Tuning a Schottky barrier of epitaxial graphene/4H-SiC (0001) by hydrogen intercalation

    Energy Technology Data Exchange (ETDEWEB)

    Dharmaraj, P.; Justin Jesuraj, P.; Jeganathan, K., E-mail: kjeganathan@yahoo.com [Centre for Nanoscience and Nanotechnology, School of Physics, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu (India)

    2016-02-01

    We report the electron transport properties of epitaxial graphene (EG) grown on 4H-SiC (0001) by low energy electron-beam irradiation. As-grown EG (AEG) on SiC interface exhibits rectifying current-voltage characteristics with a low Schottky barrier (SB) of 0.55 ± 0.05 eV and high reverse current leakage. The SB of AEG/SiC junction is extremely impeded by the Fermi level pinning (FLP) above the Dirac point due to charged states at the interface. Nevertheless, a gentle hydrogen intercalation at 900 °C enables the alleviation of both FLP and carrier scattering owing to the saturation of dangling bonds as evidenced by the enhancement of SB (0.75 ± 0.05 eV) and high electron mobility well excess of 6000 cm{sup 2} V{sup −1} s{sup −1}.

  8. Tunable magnetotransport in Fe/hBN/graphene/hBN/Pt(Fe) epitaxial multilayers

    Science.gov (United States)

    Magnus Ukpong, Aniekan

    2018-03-01

    Theoretical and computational analysis of the magnetotransport properties and spin-transfer torque field-induced switching of magnetization density in vertically-stacked multilayers is presented. Using epitaxially-capped free layers of Pt and Fe, atom-resolved magnetic moments and spin-transfer torques are computed at finite bias. The calculations are performed within linear response approximation to the spin-density reformulation of the van der Waals density functional theory. Dynamical spin excitations are computed as a function of a spin-transfer torque induced magnetic field along the magnetic easy axis, and the corresponding spin polarization perpendicular to the easy axis is obtained. Bias-dependent giant anisotropic magnetoresistance of up to 3200% is obtained in the nonmagnetic-metal-capped Fe/hBN/graphene/hBN/Pt multilayer architecture. Since this specific heterostructure is not yet fabricated and characterized, the predicted high performance has not been demonstrated experimentally. Nevertheless, similar calculations performed on the Fe/hBN/Co stack show that the tunneling magnetoresistance obtained at the Fermi-level is in excellent agreement with results of recent magnetotransport measurements on magnetic tunnel junctions that contain the monolayer hBN tunnel region. The magnitude of the spin-transfer torque is found to increase as the tunneling spin current increases, and this activates the magnetization switching process due to increased charge accumulation. This mechanism causes substantial spin backflow, which manifests as rapid undulations in the bias-dependent tunneling spin currents. The implication of these findings on the design of nanoscale spintronic devices with spin-transfer torque tunable magnetization density is discussed. Insights derived from this study are expected to enhance the prospects for developing and integrating artificially assembled van der Waals multilayer heterostructures as the preferred material platform for efficient

  9. Electronic energy loss spectra from mono-layer to few layers of phosphorene

    Energy Technology Data Exchange (ETDEWEB)

    Mohan, Brij, E-mail: brijmohanhpu@yahoo.com; Thakur, Rajesh; Ahluwalia, P. K. [Department of Physics, Himachal Pradesh University, Shimla (HP) India 171005 (India)

    2016-05-23

    Using first principles calculations, electronic and optical properties of few-layers phosphorene has been investigated. Electronic band structure show a moderate band gap of 0.9 eV in monolayer phosphorene which decreases with increasing number of layers. Optical properties of few-layers of phosphorene in infrared and visible region shows tunability with number of layers. Electron energy loss function has been plotted and huge red shift in plasmonic behaviours is found. These tunable electronic and optical properties of few-layers of phosphorene can be useful for the applications of optoelectronic devices.

  10. Kapitza Resistance between Few-Layer Graphene and Water: Liquid Layering Effects

    DEFF Research Database (Denmark)

    Alexeev, Dmitry; Chen, Jie; Walther, Jens Honore

    2015-01-01

    difference in the phonon mean free path between the FLG and water. Remarkably, RK is strongly dependent on the layering of water adjacent to the FLG, exhibiting an inverse proportionality relationship to the peak density of the first water layer, which is consistent with better acoustic phonon matching...... between FLG and water. These findings suggest novel ways to engineer the thermal transport properties of solid−liquidinterfaces by controlling and regulating the liquid layering at the interface....

  11. Three-fold diffraction symmetry in epitaxial graphene and the SiC substrate

    Energy Technology Data Exchange (ETDEWEB)

    Siegel, D A; Zhou, S Y; El Gabaly, F; Schmid, A K; McCarty, K F; Lanzara, A

    2009-12-10

    The crystallographic symmetries and spatial distribution of stacking domains in graphene films on 6H-SiC(0001) have been studied by low energy electron diffraction (LEED) and dark field imaging in a low energy electron microscope (LEEM). We find that the graphene diffraction spots from 2 and 3 atomic layers of graphene have 3-fold symmetry consistent with AB (Bernal or rhombohedral) stacking of the layers. On the contrary, graphene diffraction spots from the buffer layer and monolayer graphene have apparent 6-fold symmetry, although the 3-fold nature of the satellite spots indicates a more complex periodicity in the graphene sheets.

  12. Measuring the dielectric and optical response of millimeter-scale amorphous and hexagonal boron nitride films grown on epitaxial graphene

    Science.gov (United States)

    Rigosi, Albert F.; Hill, Heather M.; Glavin, Nicholas R.; Pookpanratana, Sujitra J.; Yang, Yanfei; Boosalis, Alexander G.; Hu, Jiuning; Rice, Anthony; Allerman, Andrew A.; Nguyen, Nhan V.; Hacker, Christina A.; Elmquist, Randolph E.; Hight Walker, Angela R.; Newell, David B.

    2018-01-01

    Monolayer epitaxial graphene (EG), grown on the Si face of SiC, is an advantageous material for a variety of electronic and optical applications. EG forms as a single crystal over millimeter-scale areas and consequently, the large scale single crystal can be utilized as a template for growth of other materials. In this work, we present the use of EG as a template to form millimeter-scale amorphous and hexagonal boron nitride (a-BN and h-BN) films. The a-BN is formed with pulsed laser deposition and the h-BN is grown with triethylboron (TEB) and NH3 precursors, making it the first metal organic chemical vapor deposition (MOCVD) process of this growth type performed on epitaxial graphene. A variety of optical and non-optical characterization methods are used to determine the optical absorption and dielectric functions of the EG, a-BN, and h-BN within the energy range of 1 eV–8.5 eV. Furthermore, we report the first ellipsometric observation of high-energy resonant excitons in EG from the 4H polytype of SiC and an analysis on the interactions within the EG and h-BN heterostructure.

  13. Layer-dependent band alignment and work function of few-layer phosphorene.

    Science.gov (United States)

    Cai, Yongqing; Zhang, Gang; Zhang, Yong-Wei

    2014-10-20

    Using first-principles calculations, we study the electronic properties of few-layer phosphorene focusing on layer-dependent behavior of band gap, work function band alignment and carrier effective mass. It is found that few-layer phosphorene shows a robust direct band gap character, and its band gap decreases with the number of layers following a power law. The work function decreases rapidly from monolayer (5.16 eV) to trilayer (4.56 eV), and then slowly upon further increasing the layer number. Compared to monolayer phosphorene, there is a drastic decrease of hole effective mass along the ridge (zigzag) direction for bilayer phosphorene, indicating a strong interlayer coupling and screening effect. Our study suggests that 1). Few-layer phosphorene with a layer-dependent band gap and a robust direct band gap character is promising for efficient solar energy harvest. 2). Few-layer phosphorene outperforms monolayer counterpart in terms of a lighter carrier effective mass, a higher carrier density and a weaker scattering due to enhanced screening. 3). The layer-dependent band edges and work functions of few-layer phosphorene allow for modification of Schottky barrier with enhanced carrier injection efficiency. It is expected that few-layer phosphorene will present abundant opportunities for a plethora of new electronic applications.

  14. Thermal resistances of crystalline and amorphous few-layer oxide thin films

    Directory of Open Access Journals (Sweden)

    Liang Chen

    2017-11-01

    Full Text Available Thermal insulation at nanoscale is of crucial importance for non-volatile memory devices such as phase change memory and memristors. We perform non-equilibrium molecular dynamics simulations to study the effects of interface materials and structures on thermal transport across the few-layer dielectric nanostructures. The thermal resistance across few-layer nanostructures and thermal boundary resistance at interfaces consisting of SiO2/HfO2, SiO2/ZrO2 or SiO2/Al2O3 are obtained for both the crystalline and amorphous structures. Based on the comparison temperature profiles and phonon density of states, we show that the thermal boundary resistances are much larger in crystalline few-layer oxides than the amorphous ones due to the mismatch of phonon density of state between distinct oxide layers. Compared with the bulk SiO2, the increase of thermal resistance across crystalline few-layer oxides results from the thermal boundary resistance while the increase of thermal resistance across amorphous few-layer oxides is attributed to the lower thermal conductivity of the amorphous thin films.

  15. Exciton dynamics in suspended monolayer and few-layer MoS₂ 2D crystals.

    Science.gov (United States)

    Shi, Hongyan; Yan, Rusen; Bertolazzi, Simone; Brivio, Jacopo; Gao, Bo; Kis, Andras; Jena, Debdeep; Xing, Huili Grace; Huang, Libai

    2013-02-26

    Femtosecond transient absorption spectroscopy and microscopy were employed to study exciton dynamics in suspended and Si₃N₄ substrate-supported monolayer and few-layer MoS₂ 2D crystals. Exciton dynamics for the monolayer and few-layer structures were found to be remarkably different from those of thick crystals when probed at energies near that of the lowest energy direct exciton (A exciton). The intraband relaxation rate was enhanced by more than 40 fold in the monolayer in comparison to that observed in the thick crystals, which we attributed to defect assisted scattering. Faster electron-hole recombination was found in monolayer and few-layer structures due to quantum confinement effects that lead to an indirect-direct band gap crossover. Nonradiative rather than radiative relaxation pathways dominate the dynamics in the monolayer and few-layer MoS₂. Fast trapping of excitons by surface trap states was observed in monolayer and few-layer structures, pointing to the importance of controlling surface properties in atomically thin crystals such as MoS₂ along with controlling their dimensions.

  16. Room temperature deintercalation of alkali metal atoms from epitaxial graphene by formation of charge-transfer complexes

    Energy Technology Data Exchange (ETDEWEB)

    Shin, H.-C.; Ahn, S. J.; Kim, H. W.; Moon, Y.; Rai, K. B. [Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Woo, S. H. [College of Pharmacy, Chungnam National University, Daejeon 305–764 (Korea, Republic of); Ahn, J. R., E-mail: jrahn@skku.edu [Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); SAINT, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2016-08-22

    Atom (or molecule) intercalations and deintercalations have been used to control the electronic properties of graphene. In general, finite energies above room temperature (RT) thermal energy are required for the intercalations and deintercalations. Here, we demonstrate that alkali metal atoms can be deintercalated from epitaxial graphene on a SiC substrate at RT, resulting in the reduction in density of states at the Fermi level. The change in density of states at the Fermi level at RT can be applied to a highly sensitive graphene sensor operating at RT. Na atoms, which were intercalated at a temperature of 80 °C, were deintercalated at a high temperature above 1000 °C when only a thermal treatment was used. In contrast to the thermal treatment, the intercalated Na atoms were deintercalated at RT when tetrafluorotetracyanoquinodimethane (F4-TCNQ) molecules were adsorbed on the surface. The RT deintercalation occurred via the formation of charge-transfer complexes between Na atoms and F4-TCNQ molecules.

  17. Ambipolar field-effect transistors by few-layer InSe with asymmetry contact metals

    Directory of Open Access Journals (Sweden)

    Chang-Yu Lin

    2017-07-01

    Full Text Available Group IIIA−VIA layered semiconductors (MX, where M = Ga and In, X = S, Se, and Te have attracted tremendous interest for their anisotropic optical, electronic, and mechanical properties. In this study, we demonstrated that metal and InSe junctions can lead to carrier behaviors in few-layered InSe FETs. These results indicate that the polarity of few-layered InSe FETs can be determined by using metals with different work functions. We adopted FET S/D metal contacts with asymmetric work functions to reduce the Schottky barriers of electrons and holes, and discovered that few-layered InSe FETs with carefully selected metal contacts can achieve ambipolar behaviors. These results indicate that group IIIA−VIA layered semiconductor FETs with asymmetry contact metals have great potential for applications in photovoltaic devices, optical sensors, and CMOS inverter circuits.

  18. Anomalous response of supported few-layer hexagonal boron nitride to DC electric fields: a confined water effect?

    Science.gov (United States)

    Oliveira, Camilla; Matos, Matheus; Mazzoni, Mário; Chacham, Hélio; Neves, Bernardo

    2013-03-01

    Hexagonal boron nitride (h-BN) is a two-dimensional compound from III-V family, with the atoms of boron and nitrogen arranged in a honeycomb lattice, similar to graphene. Unlike graphene though, h-BN is an insulator material, with a gap larger than 5 eV. Here, we use Electric Force Microscopy (EFM) to study the electrical response of mono and few-layers of h-BN to an electric field applied by the EFM tip. Our results show an anomalous behavior in the dielectric response for h-BN for different bias orientation: for a positive bias applied to the tip, h-BN layers respond with a larger dielectric constant than the dielectric constant of the silicon dioxide substrate; while for a negative bias, the h-BN dielectric constant is smaller than the dielectric constant of the substrate. Based on first-principles calculations, we showed that this anomalous response may be interpreted as a macroscopic consequence of confinement of a thin water layer between h-BN and substrate. These results were confirmed by sample annealing and also also by a comparative analysis with h-BN on a non-polar substrate. All the authors acknowledge financial support from CNPq, Fapemig, Rede Nacional de Pesquisa em Nanotubos de Carbono and INCT-Nano-Carbono.

  19. Buffer-eliminated, charge-neutral epitaxial graphene on oxidized 4H-SiC (0001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Sirikumara, Hansika I., E-mail: hansi.sirikumara@siu.edu; Jayasekera, Thushari, E-mail: thushari@siu.edu [Department of Physics, Southern Illinois University, Carbondale, Illinois 62901 (United States)

    2016-06-07

    Buffer-eliminated, charge-neutral epitaxial graphene (EG) is important to enhance its potential in device applications. Using the first principles Density Functional Theory calculations, we investigated the effect of oxidation on the electronic and structural properties of EG on 4H-SiC (0001) surface. Our investigation reveals that the buffer layer decouples from the substrate in the presence of both silicate and silicon oxy-nitride at the interface, and the resultant monolayer EG is charge-neutral in both cases. The interface at 4H-SiC/silicate/EG is characterized by surface dangling electrons, which opens up another route for further engineering EG on 4H-SiC. Dangling electron-free 4H-SiC/silicon oxy-nitride/EG is ideal for achieving charge-neutral EG.

  20. Few-layer antimonene decorated microfiber: ultra-short pulse generation and all-optical thresholding with enhanced long term stability

    Science.gov (United States)

    Song, Yufeng; Liang, Zhiming; Jiang, Xiantao; Chen, Yunxiang; Li, Zhongjun; Lu, Lu; Ge, Yanqi; Wang, Ke; Zheng, Jilin; Lu, Shunbin; Ji, Jianhua; Zhang, Han

    2017-12-01

    Antimonene, a new type of mono/few-layer two-dimensional (2D) mono-elemental material purely consisting of antimony similar as graphene and phosphorene, has been theoretically predicted with excellent optical response and enhanced stability. Herein, we experimentally investigated the broadband nonlinear optical response of highly stable few-layer antimonene (FLA) by performing an open-aperture Z-scan laser measurement. Thanks to the direct bandgap and resonant absorption at the telecommunication band, we demonstrated the feasibility of FLA-decorated microfiber not only as an optical saturable absorber for ultrafast photonics operation, but also as a stable all-optical pulse thresholder that can effectively suppress the transmission noise, boost the signal-to-noise ratio (SNR), and reshape the deteriorated input signal. Our findings, as the first prototypic device of absorption of antimonene, might facilitate the development of antimonene-based optical communication technologies towards high stability and practical applications in the future.

  1. Point Defects and Grain Boundaries in Rotationally Commensurate MoS 2 on Epitaxial Graphene

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xiaolong [Applied Physics Graduate Program, ‡Department of Materials; Balla, Itamar [Applied Physics Graduate Program, ‡Department of Materials; Bergeron, Hadallia [Applied Physics Graduate Program, ‡Department of Materials; Hersam, Mark C. [Applied Physics Graduate Program, ‡Department of Materials

    2016-03-28

    With reduced degrees of freedom, structural defects are expected to play a greater role in two-dimensional materials in comparison to their bulk counterparts. In particular, mechanical strength, electronic properties, and chemical reactivity are strongly affected by crystal imperfections in the atomically thin limit. Here, ultrahigh vacuum (UHV) scanning tunneling microscopy (STM) and spectroscopy (STS) are employed to interrogate point and line defects in monolayer MoS2 grown on epitaxial graphene (EG) at the atomic scale. Five types of point defects are observed with the majority species showing apparent structures that are consistent with vacancy and interstitial models. The total defect density is observed to be lower than MoS2 grown on other substrates and is likely attributed to the van der Waals epitaxy of MoS2 on EG. Grain boundaries (GBs) with 30° and 60° tilt angles resulting from the rotational commensurability of MoS2 on EG are more easily resolved by STM than atomic force microscopy at similar scales due to the enhanced contrast from their distinct electronic states. For example, band gap reduction to ~0.8 and ~0.5 eV is observed with STS for 30° and 60° GBs, respectively. In addition, atomic resolution STM images of these GBs are found to agree well with proposed structure models. This work offers quantitative insight into the structure and properties of common defects in MoS2 and suggests pathways for tailoring the performance of MoS2/graphene heterostructures via defect engineering.

  2. Epitaxial B-Graphene: Large-Scale Growth and Atomic Structure.

    Science.gov (United States)

    Usachov, Dmitry Yu; Fedorov, Alexander V; Petukhov, Anatoly E; Vilkov, Oleg Yu; Rybkin, Artem G; Otrokov, Mikhail M; Arnau, Andrés; Chulkov, Evgueni V; Yashina, Lada V; Farjam, Mani; Adamchuk, Vera K; Senkovskiy, Boris V; Laubschat, Clemens; Vyalikh, Denis V

    2015-07-28

    Embedding foreign atoms or molecules in graphene has become the key approach in its functionalization and is intensively used for tuning its structural and electronic properties. Here, we present an efficient method based on chemical vapor deposition for large scale growth of boron-doped graphene (B-graphene) on Ni(111) and Co(0001) substrates using carborane molecules as the precursor. It is shown that up to 19 at. % of boron can be embedded in the graphene matrix and that a planar C-B sp(2) network is formed. It is resistant to air exposure and widely retains the electronic structure of graphene on metals. The large-scale and local structure of this material has been explored depending on boron content and substrate. By resolving individual impurities with scanning tunneling microscopy we have demonstrated the possibility for preferential substitution of carbon with boron in one of the graphene sublattices (unbalanced sublattice doping) at low doping level on the Ni(111) substrate. At high boron content the honeycomb lattice of B-graphene is strongly distorted, and therefore, it demonstrates no unballanced sublattice doping.

  3. Epitaxial Graphene on SiC: A Review of Growth and Characterization

    Directory of Open Access Journals (Sweden)

    Gholam Reza Yazdi

    2016-05-01

    Full Text Available This review is devoted to one of the most promising two-dimensional (2D materials, graphene. Graphene can be prepared by different methods and the one discussed here is fabricated by the thermal decomposition of SiC. The aim of the paper is to overview the fabrication aspects, growth mechanisms, and structural and electronic properties of graphene on SiC and the means of their assessment. Starting from historical aspects, it is shown that the most optimal conditions resulting in a large area of one ML graphene comprise high temperature and argon ambience, which allow better controllability and reproducibility of the graphene quality. Elemental intercalation as a means to overcome the problem of substrate influence on graphene carrier mobility has been described. The most common characterization techniques used are low-energy electron microscopy (LEEM, angle-resolved photoelectron spectroscopy (ARPES, Raman spectroscopy, atomic force microscopy (AFM in different modes, Hall measurements, etc. The main results point to the applicability of graphene on SiC in quantum metrology, and the understanding of new physics and growth phenomena of 2D materials and devices.

  4. A hybrid MBE-based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures

    Science.gov (United States)

    Wofford, Joseph M.; Nakhaie, Siamak; Krause, Thilo; Liu, Xianjie; Ramsteiner, Manfred; Hanke, Michael; Riechert, Henning; J. Lopes, J. Marcelo

    2017-01-01

    Van der Waals heterostructures combining hexagonal boron nitride (h-BN) and graphene offer many potential advantages, but remain difficult to produce as continuous films over large areas. In particular, the growth of h-BN on graphene has proven to be challenging due to the inertness of the graphene surface. Here we exploit a scalable molecular beam epitaxy based method to allow both the h-BN and graphene to form in a stacked heterostructure in the favorable growth environment provided by a Ni(111) substrate. This involves first saturating a Ni film on MgO(111) with C, growing h-BN on the exposed metal surface, and precipitating the C back to the h-BN/Ni interface to form graphene. The resulting laterally continuous heterostructure is composed of a top layer of few-layer thick h-BN on an intermediate few-layer thick graphene, lying on top of Ni/MgO(111). Examinations by synchrotron-based grazing incidence diffraction, X-ray photoemission spectroscopy, and UV-Raman spectroscopy reveal that while the h-BN is relaxed, the lattice constant of graphene is significantly reduced, likely due to nitrogen doping. These results illustrate a different pathway for the production of h-BN/graphene heterostructures, and open a new perspective for the large-area preparation of heterosystems combining graphene and other 2D or 3D materials. PMID:28240323

  5. Adjusting the electronic properties and gas reactivity of epitaxial graphene by thin surface metallization

    Energy Technology Data Exchange (ETDEWEB)

    Eriksson, Jens, E-mail: jenser@ifm.liu.se; Puglisi, Donatella; Kang, Yu Hsuan; Yakimova, Rositza; Lloyd Spetz, Anita

    2014-04-15

    Graphene-based chemical gas sensors normally show ultra-high sensitivity to certain gas molecules but at the same time suffer from poor selectivity and slow response and recovery times. Several approaches based on functionalization or modification of the graphene surface have been demonstrated as means to improve these issues, but most such measures result in poor reproducibility. In this study we investigate reproducible graphene surface modifications by sputter deposition of thin nanostructured Au or Pt layers. It is demonstrated that under the right metallization conditions the electronic properties of the surface remain those of graphene, while the surface chemistry is modified to improve sensitivity, selectivity and speed of response to nitrogen dioxide.

  6. Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe2.

    Science.gov (United States)

    Zhou, Lin; Xu, Kai; Zubair, Ahmad; Liao, Albert D; Fang, Wenjing; Ouyang, Fangping; Lee, Yi-Hsien; Ueno, Keiji; Saito, Riichiro; Palacios, Tomás; Kong, Jing; Dresselhaus, Mildred S

    2015-09-23

    The controlled synthesis of large-area, atomically thin molybdenum ditelluride (MoTe2) crystals is crucial for its various applications based on the attractive properties of this emerging material. In this work, we developed a chemical vapor deposition synthesis to produce large-area, uniform, and highly crystalline few-layer 2H and 1T' MoTe2 films. It was found that these two different phases of MoTe2 can be grown depending on the choice of Mo precursor. Because of the highly crystalline structure, the as-grown few-layer 2H MoTe2 films display electronic properties that are comparable to those of mechanically exfoliated MoTe2 flakes. Our growth method paves the way for the large-scale application of MoTe2 in high-performance nanoelectronics and optoelectronics.

  7. Low-Frequency Interlayer Breathing Modes in Few-Layer Black Phosphorus.

    Science.gov (United States)

    Ling, Xi; Liang, Liangbo; Huang, Shengxi; Puretzky, Alexander A; Geohegan, David B; Sumpter, Bobby G; Kong, Jing; Meunier, Vincent; Dresselhaus, Mildred S

    2015-06-10

    As a new two-dimensional layered material, black phosphorus (BP) is a very promising material for nanoelectronics and optoelectronics. We use Raman spectroscopy and first-principles theory to characterize and understand the low-frequency (LF) interlayer breathing modes (<100 cm(-1)) in few-layer BP for the first time. Using a laser polarization dependence study and group theory analysis, the breathing modes are assigned to Ag symmetry. Compared to the high-frequency (HF) Raman modes, the LF breathing modes are considerably more sensitive to interlayer coupling and, thus, their frequencies show a stronger dependence on the number of layers. Hence, they constitute an effective means to probe both the crystalline orientation and thickness of few-layer BP. Furthermore, the temperature dependence shows that in the temperature range -150 to 30 °C, the breathing modes have a weak anharmonic behavior, in contrast to the HF Raman modes that exhibit strong anharmonicity.

  8. Liquid exfoliation of solvent-stabilized few-layer black phosphorus for applications beyond electronics

    Science.gov (United States)

    Hanlon, Damien; Backes, Claudia; Doherty, Evie; Cucinotta, Clotilde S.; Berner, Nina C.; Boland, Conor; Lee, Kangho; Harvey, Andrew; Lynch, Peter; Gholamvand, Zahra; Zhang, Saifeng; Wang, Kangpeng; Moynihan, Glenn; Pokle, Anuj; Ramasse, Quentin M.; McEvoy, Niall; Blau, Werner J.; Wang, Jun; Abellan, Gonzalo; Hauke, Frank; Hirsch, Andreas; Sanvito, Stefano; O'Regan, David D.; Duesberg, Georg S.; Nicolosi, Valeria; Coleman, Jonathan N.

    2015-10-01

    Few-layer black phosphorus (BP) is a new two-dimensional material which is of great interest for applications, mainly in electronics. However, its lack of environmental stability severely limits its synthesis and processing. Here we demonstrate that high-quality, few-layer BP nanosheets, with controllable size and observable photoluminescence, can be produced in large quantities by liquid phase exfoliation under ambient conditions in solvents such as N-cyclohexyl-2-pyrrolidone (CHP). Nanosheets are surprisingly stable in CHP, probably due to the solvation shell protecting the nanosheets from reacting with water or oxygen. Experiments, supported by simulations, show reactions to occur only at the nanosheet edge, with the rate and extent of the reaction dependent on the water/oxygen content. We demonstrate that liquid-exfoliated BP nanosheets are potentially useful in a range of applications from ultrafast saturable absorbers to gas sensors to fillers for composite reinforcement.

  9. Liquid exfoliation of solvent-stabilized few-layer black phosphorus for applications beyond electronics

    Science.gov (United States)

    Hanlon, Damien; Backes, Claudia; Doherty, Evie; Cucinotta, Clotilde S.; Berner, Nina C.; Boland, Conor; Lee, Kangho; Harvey, Andrew; Lynch, Peter; Gholamvand, Zahra; Zhang, Saifeng; Wang, Kangpeng; Moynihan, Glenn; Pokle, Anuj; Ramasse, Quentin M.; McEvoy, Niall; Blau, Werner J.; Wang, Jun; Abellan, Gonzalo; Hauke, Frank; Hirsch, Andreas; Sanvito, Stefano; O'Regan, David D.; Duesberg, Georg S.; Nicolosi, Valeria; Coleman, Jonathan N.

    2015-01-01

    Few-layer black phosphorus (BP) is a new two-dimensional material which is of great interest for applications, mainly in electronics. However, its lack of environmental stability severely limits its synthesis and processing. Here we demonstrate that high-quality, few-layer BP nanosheets, with controllable size and observable photoluminescence, can be produced in large quantities by liquid phase exfoliation under ambient conditions in solvents such as N-cyclohexyl-2-pyrrolidone (CHP). Nanosheets are surprisingly stable in CHP, probably due to the solvation shell protecting the nanosheets from reacting with water or oxygen. Experiments, supported by simulations, show reactions to occur only at the nanosheet edge, with the rate and extent of the reaction dependent on the water/oxygen content. We demonstrate that liquid-exfoliated BP nanosheets are potentially useful in a range of applications from ultrafast saturable absorbers to gas sensors to fillers for composite reinforcement. PMID:26469634

  10. Thermal expansion, anharmonicity and temperature-dependent Raman spectra of single- and few-layer MoSe₂ and WSe₂.

    Science.gov (United States)

    Late, Dattatray J; Shirodkar, Sharmila N; Waghmare, Umesh V; Dravid, Vinayak P; Rao, C N R

    2014-06-06

    We report the temperature-dependent Raman spectra of single- and few-layer MoSe2 and WSe2 in the range 77-700 K. We observed linear variation in the peak positions and widths of the bands arising from contributions of anharmonicity and thermal expansion. After characterization using atomic force microscopy and high-resolution transmission electron microscopy, the temperature coefficients of the Raman modes were determined. Interestingly, the temperature coefficient of the A(2)(2u) mode is larger than that of the A(1g) mode, the latter being much smaller than the corresponding temperature coefficients of the same mode in single-layer MoS2 and of the G band of graphene. The temperature coefficients of the two modes in single-layer MoSe2 are larger than those of the same modes in single-layer WSe2. We have estimated thermal expansion coefficients and temperature dependence of the vibrational frequencies of MoS2 and MoSe2 within a quasi-harmonic approximation, with inputs from first-principles calculations based on density functional theory. We show that the contrasting temperature dependence of the Raman-active mode A(1g) in MoS2 and MoSe2 arises essentially from the difference in their strain-phonon coupling. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. A route to strong p-doping of epitaxial graphene on SiC

    KAUST Repository

    Cheng, Yingchun

    2010-11-09

    The effects of Au intercalation on the electronic properties of epitaxialgraphenegrown on SiC{0001} substrates are studied using first principles calculations. A graphenemonolayer on SiC{0001} restores the shape of the pristine graphene dispersion, where doping levels between strongly n-doped and weakly p-doped can be achieved by altering the Au coverage. We predict that Au intercalation between the two C layers of bilayer graphenegrown on SiC{0001} makes it possible to achieve a strongly p-doped graphene state, where the p-doping level can be controlled by means of the Au coverage.

  12. Magneto-transmission of multi-layer epitaxial graphene and bulk graphite: a comparison

    Czech Academy of Sciences Publication Activity Database

    Orlita, Milan; Faugeras, C.; Martinez, G.; Maude, D. K.; Schneider, J.M.; Sprinkle, M.; Berger, C.; de Heer, W.A.; Potemski, M.

    2009-01-01

    Roč. 149, 27-28 (2009), 1128-1131 ISSN 0038-1098 R&D Projects: GA AV ČR KAN400100652 Grant - others:EC(XE) RITA-CT-2003-505474 Institutional research plan: CEZ:AV0Z10100521 Keywords : graphene * cyclotron resonance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.837, year: 2009

  13. Facile electrochemical transfer of large-area single crystal epitaxial graphene from Ir(1 1 1)

    DEFF Research Database (Denmark)

    Koefoed, Line; Kongsfelt, Mikkel; Ulstrup, Søren

    2015-01-01

    High-quality growth of graphene and subsequent reliable transfer to insulating substrates are needed for various technological applications, such as flexible screens and high speed electronics. In this paper, we present a new electrochemical method for the transfer of large-area, high-quality sin...

  14. Electrostatic properties of few-layer MoS2 films

    Directory of Open Access Journals (Sweden)

    Guolin Hao

    2013-04-01

    Full Text Available Two-dimensional MoS2-based materials are considered to be one of the most attractive materials for next-generation nanoelectronics. The electrostatic properties are important in designing and understanding the performance of MoS2-based devices. By using Kelvin probe force microscopy, we show that few-layer MoS2 sheets exhibit uniform surface potential and charge distributions on their surfaces but have relatively lower surface potentials on the edges, folded areas as well as defect grain boundaries.

  15. Anisotropic in-Plane Thermal Conductivity Observed in Few-Layer Black Phosphorus

    Science.gov (United States)

    2015-10-16

    phosphorus Zhe Luo1,2, Jesse Maassen2,3, Yexin Deng2,3, Yuchen Du2,3, Richard P. Garrelts1,2, Mark S. Lundstrom2,3, Peide D. Ye2,3 & Xianfan Xu1,2 Black... phosphorus has been revisited recently as a new two-dimensional material showing potential applications in electronics and optoelectronics. Here we...report the anisotropic in-plane thermal conductivity of suspended few-layer black phosphorus measured by micro-Raman spectroscopy. The armchair and

  16. Determination of the Schottky barrier height of ferromagnetic contacts to few-layer phosphorene

    Energy Technology Data Exchange (ETDEWEB)

    Anugrah, Yoska; Robbins, Matthew C.; Koester, Steven J. [Department of Electrical and Computer Engineering, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455 (United States); Crowell, Paul A. [School of Physics and Astronomy, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455 (United States)

    2015-03-09

    Phosphorene, the 2D analogue of black phosphorus, is a promising material for studying spin transport due to its low spin-orbit coupling and its ½ nuclear spin, which could allow the study of hyperfine effects. In this work, the properties of permalloy (Py) and cobalt (Co) contacts to few-layer phosphorene are presented. The Schottky barrier height was extracted and determined as a function of gate bias. Flat-band barrier heights, relative to the valence band edge, of 110 meV and 200 meV were determined for Py and Co, respectively. These results are important for future studies of spin transport in phosphorene.

  17. Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating

    Science.gov (United States)

    Buscema, Michele; Groenendijk, Dirk J.; Steele, Gary A.; van der Zant, Herre S. J.; Castellanos-Gomez, Andres

    2014-08-01

    In conventional photovoltaic solar cells, photogenerated carriers are extracted by the built-in electric field of a semiconductor PN junction, defined by ionic dopants. In atomically thin semiconductors, the doping level can be controlled by the field effect, enabling the implementation of electrically tunable PN junctions. However, most two-dimensional (2D) semiconductors do not show ambipolar transport, which is necessary to realize PN junctions. Few-layer black phosphorus (b-P) is a recently isolated 2D semiconductor with direct bandgap, high mobility, large current on/off ratios and ambipolar operation. Here we fabricate few-layer b-P field-effect transistors with split gates and hexagonal boron nitride dielectric. We demonstrate electrostatic control of the local charge carrier type and density in the device. Illuminating a gate-defined PN junction, we observe zero-bias photocurrents and significant open-circuit voltages due to the photovoltaic effect. The small bandgap of the material allows power generation for illumination wavelengths up to 940 nm, attractive for energy harvesting in the near-infrared.

  18. Epitaxial graphene/SiC Schottky ultraviolet photodiode with orders of magnitude adjustability in responsivity and response speed

    Science.gov (United States)

    Yang, Junwei; Guo, Liwei; Guo, Yunlong; Hu, Weijie; Zhang, Zesheng

    2018-03-01

    A simple optical-electronic device that possesses widescale adjustability in its performance is specially required for realizing multifunctional applications as in optical communication and weak signal detectors. Here, we demonstrate an epitaxial graphene (EG)/n-type SiC Schottky ultraviolet (UV) photodiode with extremely widescale adjustability in its responsivity and response speed. It is found that the response speed of the device can be modulated over seven orders of magnitude from tens of nanoseconds to milliseconds by changing its working bias from 0 to -5 V, while its responsivity can be varied by three orders of magnitude. A 2.18 A/W responsivity is observed at -5 V when a 325 nm laser is irradiated on, corresponding to an external quantum efficiency over 800% ascribed to the trap induced internal gain mechanism. These performances of the EG/SiC Schottky photodiode are far superior to those based on traditional metal/SiC and indicate that the EG/n-type SiC Schottky diode is a good candidate for application in UV photodetection.

  19. Stacking-dependent electronic property of trilayer graphene epitaxially grown on Ru(0001)

    Energy Technology Data Exchange (ETDEWEB)

    Que, Yande; Xiao, Wende, E-mail: wdxiao@iphy.ac.cn, E-mail: hjgao@iphy.ac.cn; Chen, Hui; Wang, Dongfei; Du, Shixuan; Gao, Hong-Jun, E-mail: wdxiao@iphy.ac.cn, E-mail: hjgao@iphy.ac.cn [Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190 (China)

    2015-12-28

    The growth, atomic structure, and electronic property of trilayer graphene (TLG) on Ru(0001) were studied by low temperature scanning tunneling microscopy and spectroscopy in combined with tight-binding approximation (TBA) calculations. TLG on Ru(0001) shows a flat surface with a hexagonal lattice due to the screening effect of the bottom two layers and the AB-stacking in the top two layers. The coexistence of AA- and AB-stacking in the bottom two layers leads to three different stacking orders of TLG, namely, ABA-, ABC-, and ABB-stacking. STS measurements combined with TBA calculations reveal that the density of states of TLG with ABC- and ABB-stacking is characterized by one and two sharp peaks near to the Fermi level, respectively, in contrast to the V-shaped feature of TLG with ABA-stacking. Our work demonstrates that TLG on Ru(0001) might be an ideal platform for exploring stacking-dependent electronic properties of graphene.

  20. Direct microwave annealing of SiC substrate for rapid synthesis of quality epitaxial graphene

    Czech Academy of Sciences Publication Activity Database

    Cichoň, Stanislav; Macháč, P.; Fekete, Ladislav; Lapčák, L.

    2016-01-01

    Roč. 98, Mar (2016), s. 441-448 ISSN 0008-6223 R&D Projects: GA MŠk LO1409; GA MŠk(CZ) LM2011029 Grant - others:FUNBIO(XE) CZ.2.16/3.1.00/21568 Institutional support: RVO:68378271 Keywords : graphene * SiC * microwave Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 6.337, year: 2016

  1. Approach to Multifunctional Device Platform with Epitaxial Graphene on Transition Metal Oxide (Postprint)

    Science.gov (United States)

    2015-09-23

    layers, respectively. 15. SUBJECT TERMS Heterostructures, two-dimensional materials, van der Waals interaction , 2D graphene, metal oxide (TiO2...sample holder with a 10.6 μ m CO2 IR laser . The laser output power was adjusted until the target temperature was reached. The temperature of the sample... Laser Deposited Transition- Metal Carbides for Field-Emission Cathode Coatings. ACS Appl. Mater. Interfaces 5, 9241–9246 (2013). 13. Swift, G. A

  2. Epitaxial Crystallization of Precisely Methyl-Substituted Polyethylene Induced by Carbon Nanotubes and Graphene

    Directory of Open Access Journals (Sweden)

    Weijun Miao

    2018-04-01

    Full Text Available How large of a substituent/branch a polyethylene possesses that can still be induced by nanofillers to form ordered chain structures is interesting, but uncertain. To solve this problem, precisely methyl-substituted polyethylene (PE21M was chosen as a model to prepare its one-dimensional and two-dimensional nanocomposites with carbon nanotubes (CNTs and graphene via solution crystallization. It is shown that kebab-like and rod-like nanofiller-induced crystals were separately observed on the surfaces of CNTs and graphene and the density of rod-like crystals is significantly less than kebab-like ones. The results of differential scanning calorimetry (DSC and X-ray diffraction (XRD reveal that CNTs and graphene cannot induce polymers with the substituent volume greater than, or equal to, 2 Å (methyl to form ordered lattice structure, but CNTs exhibit the better nucleation effect, providing us with guidance to manipulate the physical performance of polymer composites on the basis of the size of the substituent and the type of nanofiller.

  3. Optical Properties and Band Gap of Single- and Few-Layer MoTe2 Crystals

    Science.gov (United States)

    Aslan, Ozgur Burak; Ruppert, Claudia; Heinz, Tony

    2015-03-01

    Single- and few-layer crystals of exfoliated MoTe2 have been characterized spectroscopically by photoluminescence, Raman scattering, and optical absorption measurements. We find that MoTe2 in the monolayer limit displays strong photoluminescence. On the basis of complementary optical absorption results, we conclude that monolayer MoTe2 is a direct-gap semiconductor with an optical band gap of 1.10 eV. This new monolayer material extends the spectral range of atomically thin direct-gap materials from the visible to the near-infrared. Supported by the NSF through Grant DMR-1124894 for sample preparation and characterization by the O?ce of Naval Research for analysis. C.R. acknowledges support from the Alexander von Humboldt Foundation.

  4. Few-layer black phosphorus based saturable absorber mirror for pulsed solid-state lasers.

    Science.gov (United States)

    Ma, Jie; Lu, Shunbin; Guo, Zhinan; Xu, Xiaodong; Zhang, Han; Tang, Dingyuan; Fan, Dianyuan

    2015-08-24

    We experimentally demonstrated that few-layer black phosphorus (BP) could be used as an optical modulator for solid-state lasers to generate short laser pulses. The BP flakes were fabricated by the liquid phase exfoliation method and drop-casted on a high-reflection mirror to form a BP-based saturable absorber mirror (BP-SAM). Stable Q-switched pulses with a pulse width of 620 ns at the wavelength of 1046 nm were obtained in a Yb:CaYAlO(4) (Yb:CYA) laser with the BP-SAM. The generated pulse train has a repetition rate of 113.6 kHz and an average output power of 37 mW. Our results show that the BP-SAMs could have excellent prospective for ultrafast photonics applications.

  5. Role of Interlayer Coupling on the Evolution of Band Edges in Few-Layer Phosphorene.

    Science.gov (United States)

    Wang, V; Liu, Y C; Kawazoe, Y; Geng, W T

    2015-12-17

    Using first-principles calculations, we have investigated the evolution of band edges in few-layer phosphorene as a function of the number of P layers. Our results predict that monolayer phosphorene is an indirect band gap semiconductor and its valence band edge is extremely sensitive to strain. Its band gap could undergo an indirect-to-direct transition under a lattice expansion as small as 1% along the zigzag direction. A semiempirical interlayer coupling model is proposed, which can reproduce the evolution of valence band edges obtained by first-principles calculations well. We conclude that the interlayer coupling plays a dominant role in the evolution of the band edges via decreasing both band gap and carrier effective masses with the increase of phosphorene thickness. Scrutiny of the orbital-decomposed band structure provides a better understanding of the upward shift of the valence band maximum, surpassing that of the conduction band minimum.

  6. Large-area few-layer hexagonal boron nitride prepared by quadrupole field aided exfoliation

    Science.gov (United States)

    Lun Lu, Han; Zhi Rong, Min; Qiu Zhang, Ming

    2018-03-01

    A quadrupole electric field-mediated exfoliation method is proposed to convert micron-sized hexagonal boron nitride (h-BN) powder into few-layer hexagonal boron nitride nanosheets (h-BNNS). Under optimum conditions (400 Hz, 40 V, 32 μg ml‑1, sodium deoxycholate, TAE medium), the h-BN powders (thickness >200 nm, horizontal scale ∼10 μm) are successfully exfoliated into 0.5–4 nm (1–10 layers) thick h-BNNS with the same horizontal scale. Dynamic laser scattering and atomic force microscope data show that the yield is 47.6% (for the portion with the thickness of 0.5–6 nm), and all of the vertical sizes are reduced to smaller than 18 nm (45 layers).

  7. Few-Layer Black Phosphorus Carbide Field-Effect Transistor via Carbon Doping.

    Science.gov (United States)

    Tan, Wee Chong; Cai, Yongqing; Ng, Rui Jie; Huang, Li; Feng, Xuewei; Zhang, Gang; Zhang, Yong-Wei; Nijhuis, Christian A; Liu, Xinke; Ang, Kah-Wee

    2017-06-01

    Black phosphorus carbide (b-PC) is a new family of layered semiconducting material that has recently been predicted to have the lightest electrons and holes among all known 2D semiconductors, yielding a p-type mobility (≈10 5 cm 2 V -1 s -1 ) at room temperature that is approximately five times larger than the maximum value in black phosphorus. Here, a high-performance composite few-layer b-PC field-effect transistor fabricated via a novel carbon doping technique which achieved a high hole mobility of 1995 cm 2 V -1 s -1 at room temperature is reported. The absorption spectrum of this material covers an electromagnetic spectrum in the infrared regime not served by black phosphorus and is useful for range finding applications as the earth atmosphere has good transparency in this spectral range. Additionally, a low contact resistance of 289 Ω µm is achieved using a nickel phosphide alloy contact with an edge contacted interface via sputtering and thermal treatment. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors

    Science.gov (United States)

    Ameen, Tarek A.; Ilatikhameneh, Hesameddin; Klimeck, Gerhard; Rahman, Rajib

    2016-01-01

    2D transition metal dichalcogenides (TMDs) have attracted a lot of attention recently for energy-efficient tunneling-field-effect transistor (TFET) applications due to their excellent gate control resulting from their atomically thin dimensions. However, most TMDs have bandgaps (Eg) and effective masses (m*) outside the optimum range needed for high performance. It is shown here that the newly discovered 2D material, few-layer phosphorene, has several properties ideally suited for TFET applications: 1) direct Eg in the optimum range ~1.0–0.4 eV, 2) light transport m* (0.15 m0), 3) anisotropic m* which increases the density of states near the band edges, and 4) a high mobility. These properties combine to provide phosphorene TFET outstanding ION ~ 1 mA/um, ON/OFF ratio ~ 106 for a 15 nm channel and 0.5 V supply voltage, thereby significantly outperforming the best TMD-TFETs and CMOS in many aspects such as ON/OFF current ratio and energy-delay products. Furthermore, phosphorene TFETS can scale down to 6 nm channel length and 0.2 V supply voltage within acceptable range in deterioration of the performance metrics. Full-band atomistic quantum transport simulations establish phosphorene TFETs as serious candidates for energy-efficient and scalable replacements of MOSFETs. PMID:27345020

  9. Operation mode switchable charge-trap memory based on few-layer MoS2

    Science.gov (United States)

    Hou, Xiang; Yan, Xiao; Liu, Chunsen; Ding, Shijin; Zhang, David Wei; Zhou, Peng

    2018-03-01

    Ultrathin layered two-dimensional (2D) semiconductors like MoS2 and WSe2 have received a lot of attention because of their excellent electrical properties and potential applications in electronic devices. We demonstrate a charge-trap memory with two different tunable operation modes based on a few-layer MoS2 channel and an Al2O3/HfO2/Al2O3 charge storage stack. Our device shows excellent memory properties under the traditional three-terminal operation mode. More importantly, unlike conventional charge-trap devices, this device can also realize the memory performance with just two terminals (drain and source) because of the unique atomic crystal electrical characteristics. Under the two-terminal operation mode, the erase/program current ratio can reach up to 104 with a stable retention property. Our study indicates that the conventional charge-trap memory cell can also realize the memory performance without the gate terminal based on novel two dimensional materials, which is meaningful for low power consumption and high integration density applications.

  10. Structural Phase Transition and Material Properties of Few-Layer Monochalcogenides.

    Science.gov (United States)

    Mehboudi, Mehrshad; Fregoso, Benjamin M; Yang, Yurong; Zhu, Wenjuan; van der Zande, Arend; Ferrer, Jaime; Bellaiche, L; Kumar, Pradeep; Barraza-Lopez, Salvador

    2016-12-09

    GeSe and SnSe monochalcogenide monolayers and bilayers undergo a two-dimensional phase transition from a rectangular unit cell to a square unit cell at a critical temperature T_{c} well below the melting point. Its consequences on material properties are studied within the framework of Car-Parrinello molecular dynamics and density-functional theory. No in-gap states develop as the structural transition takes place, so that these phase-change materials remain semiconducting below and above T_{c}. As the in-plane lattice transforms from a rectangle into a square at T_{c}, the electronic, spin, optical, and piezoelectric properties dramatically depart from earlier predictions. Indeed, the Y and X points in the Brillouin zone become effectively equivalent at T_{c}, leading to a symmetric electronic structure. The spin polarization at the conduction valley edge vanishes, and the hole conductivity must display an anomalous thermal increase at T_{c}. The linear optical absorption band edge must change its polarization as well, making this structural and electronic evolution verifiable by optical means. Much excitement is drawn by theoretical predictions of giant piezoelectricity and ferroelectricity in these materials, and we estimate a pyroelectric response of about 3×10^{-12}  C/K m here. These results uncover the fundamental role of temperature as a control knob for the physical properties of few-layer group-IV monochalcogenides.

  11. Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors.

    Science.gov (United States)

    Ameen, Tarek A; Ilatikhameneh, Hesameddin; Klimeck, Gerhard; Rahman, Rajib

    2016-06-27

    2D transition metal dichalcogenides (TMDs) have attracted a lot of attention recently for energy-efficient tunneling-field-effect transistor (TFET) applications due to their excellent gate control resulting from their atomically thin dimensions. However, most TMDs have bandgaps (Eg) and effective masses (m(*)) outside the optimum range needed for high performance. It is shown here that the newly discovered 2D material, few-layer phosphorene, has several properties ideally suited for TFET applications: 1) direct Eg in the optimum range ~1.0-0.4 eV, 2) light transport m(*) (0.15 m0), 3) anisotropic m(*) which increases the density of states near the band edges, and 4) a high mobility. These properties combine to provide phosphorene TFET outstanding ION ~ 1 mA/um, ON/OFF ratio ~ 10(6) for a 15 nm channel and 0.5 V supply voltage, thereby significantly outperforming the best TMD-TFETs and CMOS in many aspects such as ON/OFF current ratio and energy-delay products. Furthermore, phosphorene TFETS can scale down to 6 nm channel length and 0.2 V supply voltage within acceptable range in deterioration of the performance metrics. Full-band atomistic quantum transport simulations establish phosphorene TFETs as serious candidates for energy-efficient and scalable replacements of MOSFETs.

  12. Thermal effects on the Raman phonon of few-layer phosphorene

    Energy Technology Data Exchange (ETDEWEB)

    Ling, Zhi-Peng; Ang, Kah-Wee, E-mail: eleakw@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583 (Singapore); Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore 117546 (Singapore)

    2015-12-01

    Two-dimensional phosphorene is a promising channel material for next generation transistor applications due to its superior carrier transport property. Here, we report the influence of thermal effects on the Raman phonon of few-layer phosphorene formed on hafnium-dioxide (HfO{sub 2}) high-k dielectric. When annealed at elevated temperatures (up to 200 °C), the phosphorene film was found to exhibit a blue shift in both the out-of-plane (A{sup 1}{sub g}) and in-plane (B{sub 2g} and A{sup 2}{sub g}) phonon modes as a result of compressive strain effect. This is attributed to the out-diffusion of hafnium (Hf) atoms from the underlying HfO{sub 2} dielectric, which compresses the phosphorene in both the zigzag and armchair directions. With a further increase in thermal energy beyond 250 °C, strain relaxation within phosphorene eventually took place. When this happens, the phosphorene was unable to retain its intrinsic crystallinity prior to annealing, as evident from the broadening of full-width at half maximum of the Raman phonon. These results provide an important insight into the impact of thermal effects on the structural integrity of phosphorene when integrated with high-k gate dielectric.

  13. Thermal effects on the Raman phonon of few-layer phosphorene

    Directory of Open Access Journals (Sweden)

    Zhi-Peng Ling

    2015-12-01

    Full Text Available Two-dimensional phosphorene is a promising channel material for next generation transistor applications due to its superior carrier transport property. Here, we report the influence of thermal effects on the Raman phonon of few-layer phosphorene formed on hafnium-dioxide (HfO2 high-k dielectric. When annealed at elevated temperatures (up to 200 °C, the phosphorene film was found to exhibit a blue shift in both the out-of-plane (A1g and in-plane (B2g and A2g phonon modes as a result of compressive strain effect. This is attributed to the out-diffusion of hafnium (Hf atoms from the underlying HfO2 dielectric, which compresses the phosphorene in both the zigzag and armchair directions. With a further increase in thermal energy beyond 250 °C, strain relaxation within phosphorene eventually took place. When this happens, the phosphorene was unable to retain its intrinsic crystallinity prior to annealing, as evident from the broadening of full-width at half maximum of the Raman phonon. These results provide an important insight into the impact of thermal effects on the structural integrity of phosphorene when integrated with high-k gate dielectric.

  14. Photocatalytic Stability of Single- and Few-Layer MoS₂.

    Science.gov (United States)

    Parzinger, Eric; Miller, Bastian; Blaschke, Benno; Garrido, Jose A; Ager, Joel W; Holleitner, Alexander; Wurstbauer, Ursula

    2015-11-24

    MoS2 crystals exhibit excellent catalytic properties and great potential for photocatalytic production of solar fuels such as hydrogen gas. In this regard, the photocatalytic stability of exfoliated single- and few-layer MoS2 immersed in water is investigated by μ-Raman spectroscopy. We find that while the basal plane of MoS2 can be treated as stable under photocatalytic conditions, the edge sites and presumably also defect sites are highly affected by a photoinduced corrosion process. The edge sites of MoS2 monolayers are significantly more resistant to photocatalytic degradation compared to MoS2 multilayer edge sites. The photostability of MoS2 edge sites depends on the photon energy with respect to the band gap in MoS2 and also on the presence of oxygen in the electrolyte. These findings are interpreted in the framework of an oxidation process converting MoS2 into MoOx in the presence of oxygen and photoinduced charge carriers. The high stability of the MoS2 basal plane under photocatalytic treatment under visible light irradiation of extreme light intensities on the order of P ≈ 10 mW/μm(2) substantiates MoS2's potential as photocatalyst for solar hydrogen production.

  15. Large-area few-layer MoS 2 deposited by sputtering

    KAUST Repository

    Huang, Jyun-Hong

    2016-06-06

    Direct magnetron sputtering of transition metal dichalcogenide targets is proposed as a new approach for depositing large-area two-dimensional layered materials. Bilayer to few-layer MoS2 deposited by magnetron sputtering followed by post-deposition annealing shows superior area scalability over 20 cm(2) and layer-by-layer controllability. High crystallinity of layered MoS2 was confirmed by Raman, photo-luminescence, and transmission electron microscopy analysis. The sputtering temperature and annealing ambience were found to play an important role in the film quality. The top-gate field-effect transistor by using the layered MoS2 channel shows typical n-type characteristics with a current on/off ratio of approximately 10(4). The relatively low mobility is attributed to the small grain size of 0.1-1 mu m with a trap charge density in grain boundaries of the order of 10(13) cm(-2).

  16. Neutralization of an epitaxial graphene grown on a SiC(0001) by means of palladium intercalation

    Science.gov (United States)

    Yagyu, Kazuma; Takahashi, Kazutoshi; Tochihara, Hiroshi; Tomokage, Hajime; Suzuki, Takayuki

    2017-03-01

    Pd-intercalated graphene grown on a SiC(0001) substrate was investigated using STM, angle-resolved photoemission spectroscopy, and XPS. Pd atoms deposited at room temperature on a zero layer graphene grown on a SiC(0001) substrate were intercalated between the zero layer graphene and the SiC substrate after the thermal annealing above 700 °C, forming a Pd-intercalated single layer graphene. No charge transfer occurred between the intercalated Pd layer and the graphene, which resulted in the formation of the electrically neutral graphene. The Pd-intercalated graphene remained electrically neutral throughout the annealing temperature range between 700 and 1100 °C. The charge transfer, however, occurred between the intercalated Pd layer and the SiC substrate, which caused a band bending confirmed in the core level spectra measured by XPS.

  17. Imaging Electron Motion in a Few Layer MoS2 Device

    Science.gov (United States)

    Bhandari, S.; Wang, K.; Watanabe, K.; Taniguchi, T.; Kim, P.; Westervelt, R. M.

    2017-06-01

    Ultrathin sheets of MoS2 are a newly discovered 2D semiconductor that holds great promise for nanoelectronics. Understanding the pattern of current flow will be crucial for developing devices. In this talk, we present images of current flow in MoS2 obtained with a Scanned Probe Microscope (SPM) cooled to 4 K. We previously used this technique to image electron trajectories in GaAs/AlGaAs heterostructures and graphene. The charged SPM tip is held just above the sample surface, creating an image charge inside the device that scatters electrons. By measuring the change in resistance ΔR while the tip is raster scanned above the sample, an image of electron flow is obtained. We present images of electron flow in an MoS2 device patterned into a hall bar geometry. A three-layer MoS2 sheet is encased by two hBN layers, top and bottom, and patterned into a hall-bar with multilayer graphene contacts. An SPM image shows the current flow pattern from the wide contact at the end of the device for a Hall density n = 1.3×1012 cm-2. The SPM tip tends to block flow, increasing the resistance R. The pattern of flow was also imaged for a narrow side contact on the sample. At density n = 5.4×1011 cm-2; the pattern seen in the SPM image is similar to the wide contact. The ability to image electron flow promises to be very useful for the development of ultrathin devices from new 2D materials.

  18. Correlation between (in)commensurate domains of multilayer epitaxial graphene grown on SiC(0 0 0 1-bar ) and single layer electronic behavior

    International Nuclear Information System (INIS)

    Mendes-de-Sa, T G; Goncalves, A M B; Matos, M J S; Coelho, P M; Magalhaes-Paniago, R; Lacerda, R G

    2012-01-01

    A systematic study of the evolution of the electronic behavior and atomic structure of multilayer epitaxial graphene (MEG) as a function of growth time was performed. MEG was obtained by sublimation of a 4H-SiC(0 0 0 1-bar ) substrate in an argon atmosphere. Raman spectroscopy and x-ray diffraction were carried out in samples grown for different times. For 30 min of growth the sample Raman signal is similar to that of graphite, while for 60 min the spectrum becomes equivalent to that of exfoliated graphene. Conventional x-ray diffraction reveals that all the samples have two different (0001) lattice spacings. Grazing incidence x-ray diffraction shows that thin films are composed of rotated (commensurate) structures formed by adjacent graphene layers. Thick films are almost completely disordered. This result can be directly correlated to the single layer electronic behavior of the films as observed by Raman spectroscopy. Finally, to understand the change in lattice spacings as a result of layer rotation, we have carried out first principles calculations (using density functional theory) of the observed commensurate structures. (paper)

  19. Synthesis and electronic properties of chemically functionalized graphene on metal surfaces

    International Nuclear Information System (INIS)

    Grüneis, Alexander

    2013-01-01

    A review on the electronic properties, growth and functionalization of graphene on metals is presented. Starting from the derivation of the electronic properties of an isolated graphene layer using the nearest neighbor tight-binding (TB) approximation for π and σ electrons, the TB model is then extended to third-nearest neighbors and interlayer coupling. The latter is relevant to few-layer graphene and graphite. Next, the conditions under which epitaxial graphene can be obtained by chemical vapor deposition are reviewed with a particular emphasis on the Ni(111) surface. Regarding functionalization, I first discuss the intercalation of monolayer Au into the graphene/Ni(111) interface, which renders graphene quasi-free-standing. The Au intercalated quasi-free-standing graphene is then the basis for chemical functionalization. Functionalization of graphene is classified into covalent, ionic and substitutional functionalization. As archetypical examples for these three possibilities I discuss covalent functionalization by hydrogen, ionic functionalization by alkali metals and substitutional functionalization by nitrogen heteroatoms.

  20. Large-area synthesis and photoelectric properties of few-layer MoSe2 on molybdenum foils

    Science.gov (United States)

    Wu, Zenghui; Tai, Guoan; Wang, Xufeng; Hu, Tingsong; Wang, Rui; Guo, Wanlin

    2018-03-01

    Compared with MoS2 and WS2, selenide analogs have narrower band gaps and higher electron mobilities, which make them more applicable to real electrical devices. In addition, few-layer metal selenides have higher electrical conductivity, carrier mobility and light absorption than the corresponding monolayers. However, the large-scale and high-quality growth of few-layer metal selenides remains a significant challenge. Here, we develop a facile method to grow large-area and highly crystalline few-layer MoSe2 by directly selenizing the Mo foil surface at 550 °C within 60 min under ambient pressure. The atomic layers were controllably grown with thicknesses between 3.4 and 6 nm, which just met the thickness range required for high-performance electrical devices. Furthermore, we fabricated a vertical p-n junction photodetector composed of few-layer MoSe2 and p-type silicon, achieving photoresponsivity higher by two orders of magnitude than that of the reported monolayer counterpart. This technique provides a feasible approach towards preparing other 2D transition metal dichalcogendes for device applications.

  1. Cold cathode emission studies on topographically modified few layer and single layer MoS2 films

    Science.gov (United States)

    Gaur, Anand P. S.; Sahoo, Satyaprakash; Mendoza, Frank; Rivera, Adriana M.; Kumar, Mohit; Dash, Saroj P.; Morell, Gerardo; Katiyar, Ram S.

    2016-01-01

    Nanostructured materials, such as carbon nanotubes, are excellent cold cathode emitters. Here, we report comparative field emission (FE) studies on topographically tailored few layer MoS2 films consisting of ⟨0001⟩ plane perpendicular (⊥) to c-axis (i.e., edge terminated vertically aligned) along with planar few layer and monolayer (1L) MoS2 films. FE measurements exhibited lower turn-on field Eto (defined as required applied electric field to emit current density of 10 μA/cm2) ˜4.5 V/μm and higher current density ˜1 mA/cm2, for edge terminated vertically aligned (ETVA) MoS2 films. However, Eto magnitude for planar few layer and 1L MoS2 films increased further to 5.7 and 11 V/μm, respectively, with one order decrease in emission current density. The observed differences in emission behavior, particularly for ETVA MoS2 is attributed to the high value of geometrical field enhancement factor (β), found to be ˜1064, resulting from the large confinement of localized electric field at edge exposed nanograins. Emission behavior of planar few layers and 1L MoS2 films are explained under a two step emission mechanism. Our studies suggest that with further tailoring the microstructure of ultra thin ETVA MoS2 films would result in elegant FE properties.

  2. Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection

    Energy Technology Data Exchange (ETDEWEB)

    Chava, Venkata S. N., E-mail: vchava@email.sc.edu; Omar, Sabih U.; Brown, Gabriel; Shetu, Shamaita S.; Andrews, J.; Sudarshan, T. S.; Chandrashekhar, M. V. S. [Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208 (United States)

    2016-01-25

    In this letter, we report the UV detection characteristics of an epitaxial graphene (EG)/SiC based Schottky emitter bipolar phototransistor (SEPT) with EG on top as the transparent Schottky emitter layer. Under 0.43 μW UV illumination, the device showed a maximum common emitter current gain of 113, when operated in the Schottky emitter mode. We argue that avalanche gain and photoconductive gain can be excluded, indicating minority carrier injection efficiency, γ, as high as 99% at the EG/p-SiC Schottky junction. This high γ is attributed to the large, highly asymmetric barrier, which EG forms with the p-SiC. The maximum responsivity of the UV phototransistor is estimated to be 7.1 A/W. The observed decrease in gain with increase in UV power is attributed to recombination in the base region, which reduces the minority carrier lifetime.

  3. Effects of Uniaxial and Biaxial Strain on Few-Layered Terrace Structures of MoS₂ Grown by Vapor Transport.

    Science.gov (United States)

    McCreary, Amber; Ghosh, Rudresh; Amani, Matin; Wang, Jin; Duerloo, Karel-Alexander N; Sharma, Ankit; Jarvis, Karalee; Reed, Evan J; Dongare, Avinash M; Banerjee, Sanjay K; Terrones, Mauricio; Namburu, Raju R; Dubey, Madan

    2016-03-22

    One of the most fascinating properties of molybdenum disulfide (MoS2) is its ability to be subjected to large amounts of strain without experiencing degradation. The potential of MoS2 mono- and few-layers in electronics, optoelectronics, and flexible devices requires the fundamental understanding of their properties as a function of strain. While previous reports have studied mechanically exfoliated flakes, tensile strain experiments on chemical vapor deposition (CVD)-grown few-layered MoS2 have not been examined hitherto, although CVD is a state of the art synthesis technique with clear potential for scale-up processes. In this report, we used CVD-grown terrace MoS2 layers to study how the number and size of the layers affected the physical properties under uniaxial and biaxial tensile strain. Interestingly, we observed significant shifts in both the Raman in-plane mode (as high as -5.2 cm(-1)) and photoluminescence (PL) energy (as high as -88 meV) for the few-layered MoS2 under ∼1.5% applied uniaxial tensile strain when compared to monolayers and few-layers of MoS2 studied previously. We also observed slippage between the layers which resulted in a hysteresis of the Raman and PL spectra during further applications of strain. Through DFT calculations, we contended that this random layer slippage was due to defects present in CVD-grown materials. This work demonstrates that CVD-grown few-layered MoS2 is a realistic, exciting material for tuning its properties under tensile strain.

  4. Exceptionally large migration length of carbon and topographically-facilitated self-limiting molecular beam epitaxial growth of graphene on hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Plaut, Annette S.; Wurstbauer, Ulrich; Wang, Sheng; Levy, Antonio L.; Fernandes dos Santos, Lara; Wang, Lei; Pfeiffer, Loren N.; Watanabe, Kenji; Taniguchi, Takashi; Dean, Cory R.; Hone, James; Pinczuk, Aron; Garcia, Jorge M.

    2017-04-01

    We demonstrate growth of single-layer graphene (SLG) on hexagonal boron nitride (h-BN) by molecular beam epitaxy (MBE), only limited in area by the finite size of the h-BN flakes. Using atomic force microscopy and micro-Raman spectroscopy, we show that for growth over a wide range of temperatures (500 °C – 1000 °C) the deposited carbon atoms spill off the edge of the h-BN flakes. We attribute this spillage to the very high mobility of the carbon atoms on the BN basal plane, consistent with van der Waals MBE. The h-BN flakes vary in size from 30 μm to 100 μm, thus demonstrating that the migration length of carbon atoms on h-BN is greater than 100 μm. When sufficient carbon is supplied to compensate for this loss, which is largely due to this fast migration of the carbon atoms to and off the edges of the h-BN flake, we find that the best growth temperature for MBE SLG on h-BN is ~950 °C. Self-limiting graphene growth appears to be facilitated by topographic h-BN surface features: We have thereby grown MBE self-limited SLG on an h-BN ridge. This opens up future avenues for precisely tailored fabrication of nano- and hetero-structures on pre-patterned h-BN surfaces for device applications.

  5. Few-Layer MoS2-Organic Thin-Film Hybrid Complementary Inverter Pixel Fabricated on a Glass Substrate.

    Science.gov (United States)

    Lee, Hee Sung; Shin, Jae Min; Jeon, Pyo Jin; Lee, Junyeong; Kim, Jin Sung; Hwang, Hyun Chul; Park, Eunyoung; Yoon, Woojin; Ju, Sang-Yong; Im, Seongil

    2015-05-13

    Few-layer MoS2-organic thin-film hybrid complementary inverters demonstrate a great deal of device performance with a decent voltage gain of ≈12, a few hundred pW power consumption, and 480 Hz switching speed. As fabricated on glass, this hybrid CMOS inverter operates as a light-detecting pixel as well, using a thin MoS2 channel. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Observation of resistively detected hole spin resonance and zero-field pseudo-spin splitting in epitaxial graphene

    Science.gov (United States)

    Mani, Ramesh G.; Hankinson, John; Berger, Claire; de Heer, Walter A.

    2012-01-01

    Electronic carriers in graphene show a high carrier mobility at room temperature. Thus, this system is widely viewed as a potential future charge-based high-speed electronic material to complement–or replace–silicon. At the same time, the spin properties of graphene have suggested improved capability for spin-based electronics or spintronics and spin-based quantum computing. As a result, the detection, characterization and transport of spin have become topics of interest in graphene. Here we report a microwave photo-excited transport study of monolayer and trilayer graphene that reveals an unexpectedly strong microwave-induced electrical response and dual microwave-induced resonances in the dc resistance. The results suggest the resistive detection of spin resonance, and provide a measurement of the g-factor, the spin relaxation time and the sub-lattice degeneracy splitting at zero magnetic field. PMID:22871815

  7. Few-layer MoSe₂ possessing high catalytic activity towards iodide/tri-iodide redox shuttles.

    Science.gov (United States)

    Lee, Lawrence Tien Lin; He, Jian; Wang, Baohua; Ma, Yaping; Wong, King Young; Li, Quan; Xiao, Xudong; Chen, Tao

    2014-02-14

    Due to the two-dimensional confinement of electrons, single- and few-layer MoSe₂ nanostructures exhibit unusual optical and electrical properties and have found wide applications in catalytic hydrogen evolution reaction, field effect transistor, electrochemical intercalation, and so on. Here we present a new application in dye-sensitized solar cell as catalyst for the reduction of I₃(-) to I(-) at the counter electrode. The few-layer MoSe₂ is fabricated by surface selenization of Mo-coated soda-lime glass. Our results show that the few-layer MoSe₂ displays high catalytic efficiency for the regeneration of I(-) species, which in turn yields a photovoltaic energy conversion efficiency of 9.00%, while the identical photoanode coupling with "champion" electrode based on Pt nanoparticles on FTO glass generates efficiency only 8.68%. Thus, a Pt- and FTO-free counter electrode outperforming the best conventional combination is obtained. In this electrode, Mo film is found to significantly decrease the sheet resistance of the counter electrode, contributing to the excellent device performance. Since all of the elements in the electrode are of high abundance ratios, this type of electrode is promising for the fabrication of large area devices at low materials cost.

  8. Few-Layer MoSe2 Possessing High Catalytic Activity towards Iodide/Tri-iodide Redox Shuttles

    Science.gov (United States)

    Lee, Lawrence Tien Lin; He, Jian; Wang, Baohua; Ma, Yaping; Wong, King Young; Li, Quan; Xiao, Xudong; Chen, Tao

    2014-02-01

    Due to the two-dimensional confinement of electrons, single- and few-layer MoSe2 nanostructures exhibit unusual optical and electrical properties and have found wide applications in catalytic hydrogen evolution reaction, field effect transistor, electrochemical intercalation, and so on. Here we present a new application in dye-sensitized solar cell as catalyst for the reduction of I3- to I- at the counter electrode. The few-layer MoSe2 is fabricated by surface selenization of Mo-coated soda-lime glass. Our results show that the few-layer MoSe2 displays high catalytic efficiency for the regeneration of I- species, which in turn yields a photovoltaic energy conversion efficiency of 9.00%, while the identical photoanode coupling with ``champion'' electrode based on Pt nanoparticles on FTO glass generates efficiency only 8.68%. Thus, a Pt- and FTO-free counter electrode outperforming the best conventional combination is obtained. In this electrode, Mo film is found to significantly decrease the sheet resistance of the counter electrode, contributing to the excellent device performance. Since all of the elements in the electrode are of high abundance ratios, this type of electrode is promising for the fabrication of large area devices at low materials cost.

  9. Growth and characterization of Al{sub 2}O{sub 3} films on fluorine functionalized epitaxial graphene

    Energy Technology Data Exchange (ETDEWEB)

    Robinson, Zachary R., E-mail: ZRobinso@Brockport.edu [Department of Physics, The College at Brockport, Brockport, New York 14420 (United States); Jernigan, Glenn G.; Wheeler, Virginia D.; Hernández, Sandra C.; Eddy, Charles R. [U.S. Naval Research Laboratory, Washington, DC 20375 (United States); Mowll, Tyler R.; Ong, Eng Wen [College of Nanoscale Science and Engineering, University at Albany-SUNY, Albany, New York 12203 (United States); Ventrice, Carl A. [College of Nanoscale Science, SUNY Polytechnic Institute, Albany, New York 12203 (United States); Geisler, Heike [Department of Chemistry and Biochemistry, SUNY Oneonta, Oneonta, New York 13820 (United States); Pletikosic, Ivo; Yang, Hongbo; Valla, Tonica [Brookhaven National Laboratory, Brookhaven, New York 11973 (United States)

    2016-08-21

    Intelligent engineering of graphene-based electronic devices on SiC(0001) requires a better understanding of processes used to deposit gate-dielectric materials on graphene. Recently, Al{sub 2}O{sub 3} dielectrics have been shown to form conformal, pinhole-free thin films by functionalizing the top surface of the graphene with fluorine prior to atomic layer deposition (ALD) of the Al{sub 2}O{sub 3} using a trimethylaluminum (TMA) precursor. In this work, the functionalization and ALD-precursor adsorption processes have been studied with angle-resolved photoelectron spectroscopy, low energy electron diffraction, and X-ray photoelectron spectroscopy. It has been found that the functionalization process has a negligible effect on the electronic structure of the graphene, and that it results in a twofold increase in the adsorption of the ALD-precursor. In situ TMA-dosing and XPS studies were also performed on three different Si(100) substrates that were terminated with H, OH, or dangling Si-bonds. This dosing experiment revealed that OH is required for TMA adsorption. Based on those data along with supportive in situ measurements that showed F-functionalization increases the amount of oxygen (in the form of adsorbed H{sub 2}O) on the surface of the graphene, a model for TMA-adsorption on graphene is proposed that is based on a reaction of a TMA molecule with OH.

  10. Slater-Koster Tight-Binding parametrization of single and few-layer Black-Phosphorus from first-principles calculations

    Science.gov (United States)

    Menezes, Marcos; Capaz, Rodrigo

    Black Phosphorus (BP) is a promising material for applications in electronics, especially due to the tuning of its band gap by increasing the number of layers. In single-layer BP, also called Phosphorene, the P atoms form two staggered chains bonded by sp3 hybridization, while neighboring layers are bonded by Van-der-Waals interactions. In this work, we present a Tight-Binding (TB) parametrization of the electronic structure of single and few-layer BP, based on the Slater-Koster model within the two-center approximation. Our model includes all 3s and 3p orbitals, which makes this problem more complex than that of graphene, where only 2pz orbitals are needed for most purposes. The TB parameters are obtained from a least-squares fit of DFT calculations carried on the SIESTA code. We compare the results for different basis-sets used to expand the ab-initio wavefunctions and discuss their applicability. Our model can fit a larger number of bands than previously reported calculations based on Wannier functions. Moreover, our parameters have a clear physical interpretation based on chemical bonding. As such, we expect our results to be useful in a further understanding of multilayer BP and other 2D-materials characterized by strong sp3 hybridization. CNPq, FAPERJ, INCT-Nanomateriais de Carbono.

  11. Temperature dependence of Coulomb oscillations in a few-layer two-dimensional WS2 quantum dot

    Science.gov (United States)

    Song, Xiang-Xiang; Zhang, Zhuo-Zhi; You, Jie; Liu, Di; Li, Hai-Ou; Cao, Gang; Xiao, Ming; Guo, Guo-Ping

    2015-11-01

    Standard semiconductor fabrication techniques are used to fabricate a quantum dot (QD) made of WS2, where Coulomb oscillations were found. The full-width-at-half-maximum of the Coulomb peaks increases linearly with temperature while the height of the peaks remains almost independent of temperature, which is consistent with standard semiconductor QD theory. Unlike graphene etched QDs, where Coulomb peaks belonging to the same QD can have different temperature dependences, these results indicate the absence of the disordered confining potential. This difference in the potential-forming mechanism between graphene etched QDs and WS2 QDs may be the reason for the larger potential fluctuation found in graphene QDs.

  12. Graphene-Based Polymer Nanocomposites

    Science.gov (United States)

    2015-03-31

    responsible for the low modulus of multilayer graphene in nanocomposites [34] and the reversible loss of Bernal stacking of few-layer graphene under... extrusion or injection moulding to exfoliate the graphene or GO with a strong shear force [76]. It is simple for scale-up production, and can be applied...Lombardo, A.; Ferrari, A. C., The Shear Mode of Multilayer Graphene. Nature Materials 2012, 11, 294-300. 29. Gong, L.; Young, R. J.; Kinloch, I. A

  13. Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Shuxian Cai

    2015-08-01

    Full Text Available The Si(0001 face and C(000-1 face dependences on growth pressure of epitaxial graphene (EG grown on 4H-SiC substrates by ethene chemical vapor deposition (CVD was studied using atomic force microscopy (AFM and micro-Raman spectroscopy (μ-Raman. AFM revealed that EGs on Si-faced substrates had clear stepped morphologies due to surface step bunching. However, This EG formation did not occur on C-faced substrates. It was shown by μ-Raman that the properties of EG on both polar faces were different. EGs on Si-faced substrates were relatively thinner and more uniform than on C-faced substrates at low growth pressure. On the other hand, D band related defects always appeared in EGs on Si-faced substrates, but they did not appear in EG on C-faced substrate at an appropriate growth pressure. This was due to the μ-Raman covering the step edges when measurements were performed on Si-faced substrates. The results of this study are useful for optimized growth of EG on polar surfaces of SiC substrates.

  14. Coincident-site lattice matching during van der Waals epitaxy

    OpenAIRE

    Boschker, Jos E.; Galves, Lauren A.; Flissikowski, Timur; Lopes, Joao Marcelo J.; Riechert, Henning; Calarco, Raffaella

    2015-01-01

    Van der Waals (vdW) epitaxy is an attractive method for the fabrication of vdW heterostructures. Here Sb2Te3 films grown on three different kind of graphene substrates (monolayer epitaxial graphene, quasi freestanding bilayer graphene and the SiC (6?3???6?3)R30? buffer layer) are used to study the vdW epitaxy between two 2-dimensionally (2D) bonded materials. It is shown that the Sb2Te3 /graphene interface is stable and that coincidence lattices are formed between the epilayers and substrate ...

  15. Role of vacancy sites and UV-ozone treatment on few layered MoS2 nanoflakes for toxic gas detection

    Science.gov (United States)

    Burman, Debasree; Ghosh, Ruma; Santra, Sumita; Ray, Samit Kumar; Guha, Prasanta Kumar

    2017-10-01

    Various issues like global warming and environmental pollutions have led to the research of toxic gas detection worldwide. In this work, we have tried to develop a molybdenum disulfide (MoS2) based gas sensor to detect toxic gases like ammonia and NO. MoS2, an inorganic analog of graphene, has attracted lots of attention for many different applications recently. This paper reports the use of liquid exfoliated MoS2 nanoflakes as the sensing layer in a handheld, resistive toxic gas sensor. The nanoflakes were exfoliated from MoS2 bulk powder using a sonication based exfoliation technique at room temperature. The successful exfoliation of the nanoflakes was characterized using different techniques e.g., optical microscopy, atomic force microscopy, field emission scanning electron microscopy, high resolution transmission electron microscopy, x-ray diffraction, Raman spectroscopy, x-ray photoelectron spectroscopy and ultraviolet-visible spectrophotometry. The characterization results showed that few-layered nanoflakes have successfully been exfoliated. The MoS2 nanoflakes showed reasonable sensing towards ammonia and NO. In order to explore the effect of particle size on ammonia sensing, the MoS2 flakes were also exfoliated using different sonication times. We also observed that various factors like presence of vacancy sites, ambient oxygen, humidity, different contact electrodes have significant effect on the sensing characteristics. In fact, the response of the sensing layer against 400 ppm of ammonia increased from 54.1% to ˜80% when it was UV-ozone treated. This work holds promises to developing cost-effective, reliable and highly sensitive MoS2 based ammonia sensors.

  16. Strain-modulation-assisted enhanced broadband photodetector based on large-area, flexible, few-layered Gr/MoS2 on cellulose paper

    Science.gov (United States)

    Sahatiya, Parikshit; Badhulika, Sushmee

    2017-11-01

    Electronic structure and carrier behavior in semiconductor junctions can be effectively modulated on the application of strain. This work represents the first demonstration of a large-area, flexible, paper-based graphene-molybdenum disulfide (Gr/MoS2) broadband photodetector using a low-cost solution-processed hydrothermal method and enhancement in photodetection through strain modulation by assembling the device on polydimethylsiloxane. Optimization, in terms of process parameters, was carried out to obtain trilayer MoS2 over Gr-cellulose paper. Under strain, potential barrier variation and piezopotential induced in MoS2 leads to 79.41% enhancement in photodetection in the visible region. Piezopotential induced in MoS2 lowers the conduction-band energy thereby increasing the effective electric field favoring easy electron-hole separation. The advantage of vertically stacked Gr/MoS2 for the photodetector is the utilization of the entire area as a junction where effective separation of electron-hole pairs occurs. Detailed studies of the mechanism in terms of potential barrier variation in Gr/MoS2 and an energy-band diagram are presented to help understand the proposed phenomenon. The present work demonstrates the significance of few-layer MoS2 or Gr in relation to strain-modulated photosensing in comparison to their counterparts grown via chemical vapor deposition. The results provide an excellent approach for the fabrication of low-cost heterojunctions for improved optoelectronic performance, which can be further extended to similar 2D-material heterojunctions for analog, digital and optoelectronic applications.

  17. Thickness-dependent electron mobility of single and few-layer MoS2 thin-film transistors

    Directory of Open Access Journals (Sweden)

    Ji Heon Kim

    2016-06-01

    Full Text Available We investigated the dependence of electron mobility on the thickness of MoS2 nanosheets by fabricating bottom-gate single and few-layer MoS2 thin-film transistors with SiO2 gate dielectrics and Au electrodes. All the fabricated MoS2 transistors showed on/off-current ratio of ∼107 and saturated output characteristics without high-k capping layers. As the MoS2 thickness increased from 1 to 6 layers, the field-effect mobility of the fabricated MoS2 transistors increased from ∼10 to ∼18 cm2V−1s−1. The increased subthreshold swing of the fabricated transistors with MoS2 thickness suggests that the increase of MoS2 mobility with thickness may be related to the dependence of the contact resistance and the dielectric constant of MoS2 layer on its thickness.

  18. Fabrication and independent control of patterned polymer gate for a few-layer WSe2 field-effect transistor

    Directory of Open Access Journals (Sweden)

    Sung Ju Hong

    2016-08-01

    Full Text Available We report the fabrication of a patterned polymer electrolyte for a two-dimensional (2D semiconductor, few-layer tungsten diselenide (WSe2 field-effect transistor (FET. We expose an electron-beam in a desirable region to form the patterned structure. The WSe2 FET acts as a p-type semiconductor in both bare and polymer-covered devices. We observe a highly efficient gating effect in the polymer-patterned device with independent gate control. The patterned polymer gate operates successfully in a molybdenum disulfide (MoS2 FET, indicating the potential for general applications to 2D semiconductors. The results of this study can contribute to large-scale integration and better flexibility in transition metal dichalcogenide (TMD-based electronics.

  19. Pressurizing Field-Effect Transistors of Few-Layer MoS2 in a Diamond Anvil Cell

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yabin [Univ. of California, Berkeley, CA (United States); Ke, Feng [Center for High Pressure Science and Technology Advanced Research, Shanghai (China); Ci, Penghong [Univ. of California, Berkeley, CA (United States); Ko, Changhyun [Univ. of California, Berkeley, CA (United States); Park, Taegyun [Univ. of California, Berkeley, CA (United States); Saremi, Sahar [Univ. of California, Berkeley, CA (United States); Liu, Huili [Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Lee, Yeonbae [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Suh, Joonki [Univ. of California, Berkeley, CA (United States); Martin, Lane W. [Univ. of California, Berkeley, CA (United States); Ager, Joel W. [Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Chen, Bin [Center for High Pressure Science and Technology Advanced Research, Shanghai (China); Wu, Junqiao [Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

    2016-12-08

    Hydrostatic pressure applied using diamond anvil cells (DAC) has been widely explored to modulate physical properties of materials by tuning their lattice degree of freedom. Independently, electrical field is able to tune the electronic degree of freedom of functional materials via, for example, the field-effect transistor (FET) configuration. Combining these two orthogonal approaches would allow discovery of new physical properties and phases going beyond the known phase space. Such experiments are, however, technically challenging and have not been demonstrated. In this paper, we report a feasible strategy to prepare and measure FETs in a DAC by lithographically patterning the nanodevices onto the diamond culet. Multiple-terminal FETs were fabricated in the DAC using few-layer MoS2 and BN as the channel semiconductor and dielectric layer, respectively. It is found that the mobility, conductance, carrier concentration, and contact conductance of MoS2 can all be significantly enhanced with pressure. Finally, we expect that the approach could enable unprecedented ways to explore new phases and properties of materials under coupled mechano-electrostatic modulation.

  20. Accurate identification of layer number for few-layer WS2 and WSe2 via spectroscopic study

    Science.gov (United States)

    Li, Yuanzheng; Li, Xinshu; Yu, Tong; Yang, Guochun; Chen, Heyu; Zhang, Cen; Feng, Qiushi; Ma, Jiangang; Liu, Weizhen; Xu, Haiyang; Liu, Yichun; Liu, Xinfeng

    2018-03-01

    Transition metal dichalcogenides (TMDs) with a typical layered structure are highly sensitive to their layer number in optical and electronic properties. Seeking a simple and effective method for layer number identification is very important to low-dimensional TMD samples. Herein, a rapid and accurate layer number identification of few-layer WS2 and WSe2 is proposed via locking their photoluminescence (PL) peak-positions. As the layer number of WS2/WSe2 increases, it is found that indirect transition emission is more thickness-sensitive than direct transition emission, and the PL peak-position differences between the indirect and direct transitions can be regarded as fingerprints to identify their layer number. Theoretical calculation confirms that the notable thickness-sensitivity of indirect transition derives from the variations of electron density of states of W atom d-orbitals and chalcogen atom p-orbitals. Besides, the PL peak-position differences between the indirect and direct transitions are almost independent of different insulating substrates. This work not only proposes a new method for layer number identification via PL studies, but also provides a valuable insight into the thickness-dependent optical and electronic properties of W-based TMDs.

  1. Few-Layer WSe2Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping.

    Science.gov (United States)

    Ko, Seungpil; Na, Junhong; Moon, Young-Sun; Zschieschang, Ute; Acharya, Rachana; Klauk, Hagen; Kim, Gyu-Tae; Burghard, Marko; Kern, Klaus

    2017-12-13

    Ultrathin sheets of two-dimensional (2D) materials like transition metal dichalcogenides have attracted strong attention as components of high-performance light-harvesting devices. Here, we report the implementation of Schottky junction-based photovoltaic devices through site-selective surface doping of few-layer WSe 2 in lateral contact configuration. Specifically, whereas the drain region is covered by a strong molecular p-type dopant (NDP-9) to achieve an Ohmic contact, the source region is coated with an Al 2 O 3 layer, which causes local n-type doping and correspondingly an increase of the Schottky barrier at the contact. By scanning photocurrent microscopy using green laser light, it could be confirmed that photocurent generation is restricted to the region around the source contact. The local photoinduced charge separation is associated with a photoresponsivity of up to 20 mA W -1 and an external quantum efficiency of up to 1.3%. The demonstrated device concept should be easily transferrable to other van der Waals 2D materials.

  2. Passive harmonic mode-locking of Er-doped fiber laser using CVD-grown few-layer MoS2 as a saturable absorber

    International Nuclear Information System (INIS)

    Xia Han-Ding; Li He-Ping; Lan Chang-Yong; Li Chun; Deng Guang-Lei; Li Jian-Feng; Liu Yong

    2015-01-01

    Passive harmonic mode locking of an erbium-doped fiber laser based on few-layer molybdenum disulfide (MoS 2 ) saturable absorber (SA) is demonstrated. The few-layer MoS 2 is prepared by the chemical vapor deposition (CVD) method and then transferred onto the end face of a fiber connector to form a fiber-compatible MoS 2 SA. The 20th harmonic mode-locked pulses at 216-MHz repetition rate are stably generated with a pulse duration of 1.42 ps and side-mode suppression ratio (SMSR) of 36.1 dB. The results confirm that few-layer MoS 2 can serve as an effective SA for mode-locked fiber lasers. (paper)

  3. Schottky solar cell using few-layered transition metal dichalcogenides toward large-scale fabrication of semitransparent and flexible power generator.

    Science.gov (United States)

    Akama, Toshiki; Okita, Wakana; Nagai, Reito; Li, Chao; Kaneko, Toshiro; Kato, Toshiaki

    2017-09-20

    Few-layered transition metal dichalcogenides (TMDs) are known as true two-dimensional materials, with excellent semiconducting properties and strong light-matter interaction. Thus, TMDs are attractive materials for semitransparent and flexible solar cells for use in various applications. Hoewver, despite the recent progress, the development of a scalable method to fabricate semitransparent and flexible solar cells with mono- or few-layered TMDs remains a crucial challenge. Here, we show easy and scalable fabrication of a few-layered TMD solar cell using a Schottky-type configuration to obtain a power conversion efficiency (PCE) of approximately 0.7%, which is the highest value reported with few-layered TMDs. Clear power generation was also observed for a device fabricated on a large SiO 2 and flexible substrate, demonstrating that our method has high potential for scalable production. In addition, systematic investigation revealed that the PCE and external quantum efficiency (EQE) strongly depended on the type of photogenerated excitons (A, B, and C) because of different carrier dynamics. Because high solar cell performance along with excellent scalability can be achieved through the proposed process, our fabrication method will contribute to accelerating the industrial use of TMDs as semitransparent and flexible solar cells.

  4. Graphite-graphene semiconductor junctions and magneto-dielectric coupling in Schottky diodes

    Science.gov (United States)

    Tongay, Sefaattin

    The goal of this dissertation is to incorporate graphite and graphene into today's semiconductor technology as a Schottky barrier diodes (metal/semiconductor junctions) that are widely used in metal semiconductor field effect transistors (MESFETs), high electron mobility transistors (HEMTs), high temperature and frequency devices, solar cells and sensors/detectors. The first part of the dissertation aims to give the reader a general idea about the physics at the metal-semiconductor junctions and essential theory background. The second chapter of the dissertation questions effects of temperature and magnetic field on the diode characteristics of Schottky junctions. In this chapter, we present observation of negative magnetocapacitance on GaAs:Si/Au junctions and fully equipped with the theory, we present a phenomenological explanation for the observed effect. In the third chapter, we for the first time introduce multi-layer-graphene as a metal (semimetal) electrode to form Schottky barriers on various technologically significant semiconductors such as Si, GaAs, SiC and GaN. Multi-layer-graphene/ semiconductor junctions not only display good current-voltage (I - V) and capacitance-voltage (C - V) characteristics but also are significant since the Schottky barrier height and characteristics are mainly governed by the interaction and bond formation at few layers on the metal and semiconductor interface. This automatically implies that the presented results also hold for graphene/semiconductor junctions. Chapter 4, takes the Schottky formation at the multi-layer-graphene(graphene)/ semiconductor junction to another level and aims to change the Fermi level of the metal electrode by intercalation with Bromine and tune the barrier height. Observed results are significant in MESFET technology since different barrier height are desired depending on the application. The remainder of the dissertation, focuses on the properties of graphite and graphene to have more

  5. A simple process to prepare few-layer g-C{sub 3}N{sub 4} nanosheets with enhanced photocatalytic activities

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Yongning; Liu, Enzhou [School of Chemical Engineering, Northwest University, Xi’an 710069 (China); Hu, Xiaoyun [School of Physics, Northwest University, Xi’an 710069 (China); Tang, Chunni; Wan, Jun; Li, Juan [School of Chemical Engineering, Northwest University, Xi’an 710069 (China); Fan, Jun, E-mail: fanjun@nwu.edu.cn [School of Chemical Engineering, Northwest University, Xi’an 710069 (China)

    2015-12-15

    Graphical abstract: - Highlights: • The few-layer g-C{sub 3}N{sub 4} nanosheets were prepared successfully. • The formation process of the few-layer g-C{sub 3}N{sub 4} nanosheets had been investigated. • The photocatalytic mechanism of g-C{sub 3}N{sub 4} had been investigated. • The few-layer g-C{sub 3}N{sub 4} showed higher photocatalytic activity than bulk g-C{sub 3}N{sub 4}. - Abstract: Graphitic carbon nitride (g-C{sub 3}N{sub 4}) nanosheets with few-layer and single-layer structures were prepared by a simple chemical exfoliation method. The samples were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, Fourier-transform infrared spectroscopy, UV–vis absorption spectroscopy and photoluminescence spectroscopy, respectively. The investigations indicated that the bulk g-C{sub 3}N{sub 4} can be easily exfoliated into g-C{sub 3}N{sub 4} nanosheets with few-layer structure under the assistance of HNO{sub 3}. The specific surface area of few-layer g-C{sub 3}N{sub 4} reached 179.5 m{sup 2} g{sup −1}, which was about 10.3 times higher than that of bulk g-C{sub 3}N{sub 4} (17.4 m{sup 2} g{sup −1}). The absorption edge of few-layer g-C{sub 3}N{sub 4} nanosheets showed a blue shift from 486 nm to 458 nm, corresponding to an increase in the band gap from 2.55 eV to 2.70 eV compared with that of bulk g-C{sub 3}N{sub 4}. In addition, the position of the emission peak of few-layer g-C{sub 3}N{sub 4} was blue shifted from 461 nm to 439 nm. The photocatalytic performance of samples was evaluated by the degradation of methylene blue and the photocatalytic water splitting under visible light irradiation. The experimental results indicated that the degradation rate of MB on few-layer g-C{sub 3}N{sub 4} nanosheets was about 1.3 times higher than that of bulk g-C{sub 3}N{sub 4}, the H{sub 2} production rate reached 110.68 μmol g{sup −1} h{sup −1} over g-C{sub 3}N{sub 4} nanosheets, which was 1.22 times higher than

  6. Graphene and Graphene Nanomesh Spintronics

    Directory of Open Access Journals (Sweden)

    Junji Haruyama

    2013-12-01

    Full Text Available Spintronics, which manipulate spins but not electron charge, are highly valued as energy and thermal dissipationless systems. A variety of materials are challenging the realization of spintronic devices. Among those, graphene, a carbon mono-atomic layer, is very promising for efficient spin manipulation and the creation of a full spectrum of beyond-CMOS spin-based nano-devices. In the present article, the recent advancements in graphene spintronics are reviewed, introducing the observation of spin coherence and the spin Hall effect. Some research has reported the strong spin coherence of graphene. Avoiding undesirable influences from the substrate are crucial. Magnetism and spintronics arising from graphene edges are reviewed based on my previous results. In spite of carbon-based material with only sp2 bonds, the zigzag-type atomic structure of graphene edges theoretically produces spontaneous spin polarization of electrons due to mutual Coulomb interaction of extremely high electron density of states (edge states localizing at the flat energy band. We fabricate honeycomb-like arrays of low-defect hexagonal nanopores (graphene nanomeshes; GNMs on graphenes, which produce a large amount of zigzag pore edges, by using a nonlithographic method (nanoporous alumina templates and critical temperature annealing under high vacuum and hydrogen atmosphere. We observe large-magnitude ferromagnetism, which arises from polarized spins localizing at the hydrogen-terminated zigzag-nanopore edges of the GNMs, even at room temperature. Moreover, spin pumping effects are found for magnetic fields applied in parallel with the few-layer GNM planes. Strong spin coherence and spontaneously polarized edge spins of graphene can be expected to lead to novel spintronics with invisible, flexible, and ultra-light (wearable features.

  7. Electrostatic force assisted deposition of graphene

    Science.gov (United States)

    Liang, Xiaogan [Berkeley, CA

    2011-11-15

    An embodiment of a method of depositing graphene includes bringing a stamp into contact with a substrate over a contact area. The stamp has at least a few layers of the graphene covering the contact area. An electric field is developed over the contact area. The stamp is removed from the vicinity of the substrate which leaves at least a layer of the graphene substantially covering the contact area.

  8. PREFACE: Ultrathin layers of graphene, h-BN and other honeycomb structures Ultrathin layers of graphene, h-BN and other honeycomb structures

    Science.gov (United States)

    Geber, Thomas; Oshima, Chuhei

    2012-08-01

    Since ancient times, pure carbon materials have been familiar in human society—not only diamonds in jewellery and graphite in pencils, but also charcoal and coal which have been used for centuries as fuel for living and industry. Carbon fibers are stronger, tougher and lighter than steel and increase material efficiency because of their lower weight. Today, carbon fibers and related composite materials are used to make the frames of bicycles, cars and even airplane parts. The two-dimensional allotrope, now called graphene, is just a single layer of carbon atoms, locked together in a strongly bonded honeycomb lattice. In plane, graphene is stiffer than diamond, but out-of-plane it is soft, like rubber. It is virtually invisible, may conduct electricity (heat) better than copper and weighs next to nothing. Carbon compounds with two carbon atoms as a base, such as graphene, graphite or diamond, have isoelectronic sister compounds made of boron-nitrogen pairs: hexagonal and cubic boron nitride, with almost the same lattice constant. Although the two 2D sisters, graphene and h-BN, have the same number of valence electrons, their electronic properties are very different: freestanding h-BN is an insulator, while charge carriers in graphene are highly mobile. The past ten years have seen a great expansion in studies of single-layer and few-layer graphene. This activity has been concerned with the π electron transport in graphene, in electric and magnetic fields. More than 30 years ago, however, single-layer graphene and h-BN on solid surfaces were widely investigated. It was noted that they drastically changed the chemical reactivity of surfaces, and they were known to 'poison' heterogeneous catalysts, to passivate surfaces, to prevent oxidation of surfaces and to act as surfactants. Also, it was realized that the controlled growth of h-BN and graphene on substrates yields the formation of mismatch driven superstructures with peculiar template functionality on the

  9. Graphene Q-switched Yb:KYW planar waveguide laser

    NARCIS (Netherlands)

    Kim, Jun Wan; Choi, Sun Young; Aravazhi, S.; Pollnau, Markus; Griebner, Uwe; Petrov, Valentin; Bae, Sukang; Ahn, Kwang Jun; Yeom, Dong-Il; Rotermund, Fabian

    A diode-pumped Yb:KYW planar waveguide laser, single-mode Q-switched by evanescent-field interaction with graphene, is demonstrated for the first time. Few-layer graphene grown by chemical vapor deposition is transferred onto the top of a guiding layer, which initiates stable Q-switched operation in

  10. Graphene Edges Dictate the Morphology of Nanoparticles during Catalytic Channeling

    DEFF Research Database (Denmark)

    Pizzocchero, Filippo; Vanin, Marco; Kling, Jens

    2014-01-01

    We perform in-situ transmission electron microscopy (TEM) experiments of silver nanoparticles channeling on mono-, bi-, and few-layer graphene and discover that the interactions in the one-dimensional particle–graphene contact line are sufficiently strong so as to dictate the three...

  11. High temperature study on the thermal properties of few-layer Mo0.5W0.5S2 and effects of capping layers

    Directory of Open Access Journals (Sweden)

    Hong Gu

    Full Text Available We investigated the thermal properties of few-layer Mo0.5W0.5S2 using a series of samples with different kinds of capping layers. Temperature-dependent Raman measurements were conducted in the range of 300–500 K, with power-dependent measurements also carried out. It indicated, for the few-layer Mo0.5W0.5S2, the temperature coefficients of the WS2-like E12g mode, MoS2-like E12g mode and A1g mode were −0.0155 cm−1/K, −0.0146 cm−1/K, and −0.0130 cm−1/K, respectively. And the thermal conductivity was estimated to be 44.8 W/mK. Moreover, the Mo0.5W0.5S2 samples coated with capping layers (ZrO2, HfO2 both showed a better thermal stability and a larger thermal conductivity than the one without. The results revealed that the capping layer should be an important factor in the thermal property. Keywords: Mo0.5W0.5S2, TMDs, Thermal properties, High temperature, Capping layers, Raman

  12. Sodium deoxycholate functionalized graphene and its composites with polyvinyl alcohol

    International Nuclear Information System (INIS)

    Wang Lanwei; Liao Ruijuan; Tang Zhenghai; Lei Yanda; Guo Baochun

    2011-01-01

    Sodium deoxycholate (SDC), a kind of bile derivative, is used to noncovalently functionalize graphene. Stable and high concentration (up to 20 mg ml -1 ) of graphene colloid is obtained. The stabilization mechanism is revealed to be hydrophobic interaction, electrostatic repulsion and hydrogen bonding. Single-layer and few-layer graphene are obtained in the colloid. Subsequently, the obtained graphene sheets are incorporated into a polyvinyl alcohol (PVA) matrix by solution casting to fabricate PVA/graphene composites. Morphological observations substantiate the homogeneous dispersion of graphene in the PVA matrix and strong interfacial adhesion between them. Significant improvements in tensile strength and modulus of the composite films are observed.

  13. Expansion and exfoliation of graphite to form graphene

    KAUST Repository

    Patole, Shashikan P.

    2017-07-27

    Graphene production methods are described based on subjecting non- covalent graphite intercalated compounds, such as graphite bisulfate, to expansion conditions such as shocks of heat and/or microwaves followed by turbulence-assisted exfoliation to produce few-layer, high quality graphene flakes. Depending on the approach selected for the exfoliation step, free-flowing graphene powder, graphene slurry, or an aqueous graphene mixture can be obtained. Surfactants can aid in dispersion, and graphene inks can be formed. The parameters of the process are simple, efficient and low-cost enabling therefore the scale- up of production. Applications include electrodes and energy storage devices.

  14. Doubly Q-switched Nd:GGG laser with a few-layer MoS2 saturable absorber and an acousto-optic modulator

    Science.gov (United States)

    Wang, Di; Zhao, Jia; Yang, Kejian; Zhao, Shengzhi; Li, Tao; Li, Dechun; Li, Guiqiu; Qiao, Wenchao

    2017-10-01

    A doubly Q-switched Nd:GGG laser emitting 1064 nm wavelength with an acousto-optic modulator (AOM) and a few-layer MoS2 saturable absorber (SA) is presented to study the pulsed laser characteristics. The average output power, the pulse width, the pulse energy and the peak power versus pump power for different modulation frequency of AOM are measured. In comparison with singly passive Q-switched laser (SPQSL) with MoS2 SA, the doubly Q-switched laser (DQSL) can effectively shorten the pulse width, improve the pulse peak power and the stability. The shortest pulse width is 150.1 ns and the maximum peak power reaches 33.7 W. The maximum pulse compression ratio 5.8 and the highest peak power enhancement factor 21.3 are obtained, respectively.

  15. All fiber-optic ultra-sensitive temperature sensor using few-layer MoS2 coated D-shaped fiber

    Science.gov (United States)

    Mohanraj, J.; Velmurugan, V.; Sathiyan, S.; Sivabalan, S.

    2018-01-01

    We experimentally demonstrate a novel all fiber-optic temperature sensor using Molybdenum disulfide (MoS2) nanosheets coated D-shaped fiber (DSF). The DSF exhibits a strong evanescent field interaction with the MoS2 nanosheets which in turn has good optical absorption that results in very high sensitivity. In addition, a few layer MoS2 exhibit high thermal conductivity and therefore highly suitable for temperature sensing. The proposed all fiber temperature sensor was investigated in the temperature range of 26 °C - 83 °C and achieved a maximum optical output power variation of 7 dB. Further, the experimental results show an ultrahigh sensitivity of 0.1211 dB/∘C, a linear correlation coefficient of 99.6 % and a better precision of 0.04 °C. Therefore, the proposed fiber-optic sensor is capable of measuring dynamic temperatures in a harsh environment.

  16. Few-Layered Mo(1-x)WxS2Hollow Nanospheres on Ni3S2Nanorod Heterostructure as Robust Electrocatalysts for Overall Water Splitting.

    Science.gov (United States)

    Zheng, Meiyong; Du, Jing; Hou, Baopu; Xu, Cai-Ling

    2017-08-09

    Owing to unique optical, electronic, and catalytic properties, MoS 2 have received increasing interest in electrochemical water splitting. Herein, few-layered Mo (1-x) W x S 2 hollow nanospheres-modified Ni 3 S 2 heterostructures are prepared through a facile hydrothermal method to further enhance the electrocatalytic performance of MoS 2 . The doping of W element optimizes the electronic structure of MoS 2 @Ni 3 S 2 thus improving the conductivity and charge-transfer ability of MoS 2 @Ni 3 S 2 . In addition, benefitting from the few-layered hollow structure of Mo (1-x) W x S 2 , the strong electronic interactions between Mo (1-x) W x S 2 and Ni 3 S 2 and the hierarchical structure of one-dimensional nanorods and three-dimensional Ni foam, massive active sites and fast ion and charge transportation are obtained. As a result, the optimized Mo (1-x) W x S 2 @Ni 3 S 2 heterostructure (Mo-W-S-2@Ni 3 S 2 ) achieves an extremely low overpotential of 98 mV for hydrogen evolution reaction and 285 mV for oxygen evolution reaction at 10 mA cm -2 in alkaline electrolyte. Particularly, using Mo-W-S-2@Ni 3 S 2 heterostructure as a bifunctional electrocatalyst, a cell voltage of 1.62 V is required to deliver a 10 mA cm -2 water splitting current density. In addition, the electrode can be maintained at 10 mA cm -2 for at least 50 h, indicating the excellent stability of Mo-W-S-2@Ni 3 S 2 heterostructure. Therefore, this development demonstrates an effective and feasible strategy to prepare highly efficient bifunctional electrocatalysts for overall water splitting.

  17. Centimeter Scale Patterned Growth of Vertically Stacked Few Layer Only 2D MoS2/WS2 van der Waals Heterostructure.

    Science.gov (United States)

    Choudhary, Nitin; Park, Juhong; Hwang, Jun Yeon; Chung, Hee-Suk; Dumas, Kenneth H; Khondaker, Saiful I; Choi, Wonbong; Jung, Yeonwoong

    2016-05-05

    Two-dimensional (2D) van der Waal (vdW) heterostructures composed of vertically-stacked multiple transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) and tungsten disulfide (WS2) are envisioned to present unprecedented materials properties unobtainable from any other material systems. Conventional fabrications of these hybrid materials have relied on the low-yield manual exfoliation and stacking of individual 2D TMD layers, which remain impractical for scaled-up applications. Attempts to chemically synthesize these materials have been recently pursued, which are presently limited to randomly and scarcely grown 2D layers with uncontrolled layer numbers on very small areas. Here, we report the chemical vapor deposition (CVD) growth of large-area (>2 cm(2)) patterned 2D vdW heterostructures composed of few layer, vertically-stacked MoS2 and WS2. Detailed structural characterizations by Raman spectroscopy and high-resolution/scanning transmission electron microscopy (HRTEM/STEM) directly evidence the structural integrity of two distinct 2D TMD layers with atomically sharp vdW heterointerfaces. Electrical transport measurements of these materials reveal diode-like behavior with clear current rectification, further confirming the formation of high-quality heterointerfaces. The intrinsic scalability and controllability of the CVD method presented in this study opens up a wide range of opportunities for emerging applications based on the unconventional functionalities of these uniquely structured materials.

  18. Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

    International Nuclear Information System (INIS)

    Wang, Junjie; Feng, Simin; Rhodes, Daniel; Balicas, Luis; Nguyen, Minh An T.; Watanabe, K.; Taniguchi, T.; Mallouk, Thomas E.; Terrones, Mauricio; Zhu, J.

    2015-01-01

    Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides (TMDCs) faces a number of challenges in both efforts. This work attempts to establish a connection between the two by examining the gate-dependent conductance of few-layer (1-5L) WSe 2 field effect devices. Measurements and modeling of the subgap regime reveal Schottky barrier transistor behavior. We show that transmission through the contact barrier is dominated by thermionic field emission (TFE) at room temperature, despite the lack of intentional doping. The TFE process arises due to a large number of subgap impurity states, the presence of which also leads to high mobility edge carrier densities. The density of states of such impurity states is self-consistently determined to be approximately 1–2 × 10 13 /cm 2 /eV in our devices. We demonstrate that substrate is unlikely to be a major source of the impurity states and suspect that lattice defects within the material itself are primarily responsible. Our experiments provide key information to advance the quality and understanding of TMDC materials and electrical devices

  19. Scalable Synthesis of Few-Layer MoS2 Incorporated into Hierarchical Porous Carbon Nanosheets for High-Performance Li- and Na-Ion Battery Anodes.

    Science.gov (United States)

    Park, Seung-Keun; Lee, Jeongyeon; Bong, Sungyool; Jang, Byungchul; Seong, Kwang-Dong; Piao, Yuanzhe

    2016-08-03

    It is still a challenging task to develop a facile and scalable process to synthesize porous hybrid materials with high electrochemical performance. Herein, a scalable strategy is developed for the synthesis of few-layer MoS2 incorporated into hierarchical porous carbon (MHPC) nanosheet composites as anode materials for both Li- (LIB) and Na-ion battery (SIB). An inexpensive oleylamine (OA) is introduced to not only serve as a hinder the stacking of MoS2 nanosheets but also to provide a conductive carbon, allowing large scale production. In addition, a SiO2 template is adopted to direct the growth of both carbon and MoS2 nanosheets, resulting in the formation of hierarchical porous structures with interconnected networks. Due to these unique features, the as-obtained MHPC shows substantial reversible capacity and very long cycling performance when used as an anode material for LIBs and SIBs, even at high current density. Indeed, this material delivers reversible capacities of 732 and 280 mA h g(-1) after 300 cycles at 1 A g(-1) in LIBs and SIBs, respectively. The results suggest that these MHPC composites also have tremendous potential for applications in other fields.

  20. Gate-modulated conductance of few-layer WSe{sub 2} field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Junjie; Feng, Simin [Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Rhodes, Daniel; Balicas, Luis [National High Magnetic Field Lab, Florida State University, Tallahassee, Florida 32310 (United States); Nguyen, Minh An T. [Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Watanabe, K.; Taniguchi, T. [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Mallouk, Thomas E. [Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Biochemistry and Molecular Biology, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Terrones, Mauricio [Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Zhu, J., E-mail: jzhu@phys.psu.edu [Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2015-04-13

    Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides (TMDCs) faces a number of challenges in both efforts. This work attempts to establish a connection between the two by examining the gate-dependent conductance of few-layer (1-5L) WSe{sub 2} field effect devices. Measurements and modeling of the subgap regime reveal Schottky barrier transistor behavior. We show that transmission through the contact barrier is dominated by thermionic field emission (TFE) at room temperature, despite the lack of intentional doping. The TFE process arises due to a large number of subgap impurity states, the presence of which also leads to high mobility edge carrier densities. The density of states of such impurity states is self-consistently determined to be approximately 1–2 × 10{sup 13}/cm{sup 2}/eV in our devices. We demonstrate that substrate is unlikely to be a major source of the impurity states and suspect that lattice defects within the material itself are primarily responsible. Our experiments provide key information to advance the quality and understanding of TMDC materials and electrical devices.

  1. Comparing Graphene Growth on Cu(111) versus Oxidized Cu(111)

    NARCIS (Netherlands)

    Gottardi, Stefano; Müller, Kathrin; Bignardi, Luca; Moreno Lopez, Juan Carlos; Pham, Tuan Anh; Ivashenko, Oleksii; Yablonskikh, Mikhail; Barinov, Alexei; Björk, Jonas; Rudolf, Petra; Stöhr, Meike

    2015-01-01

    The epitaxial growth of graphene on catalytically active metallic surfaces via chemical vapor deposition (CVD) is known to be one of the most reliable routes toward high-quality large-area graphene. This CVD-grown graphene is generally coupled to its metallic support resulting in a modification of

  2. Green conversion of graphene oxide to graphene nanosheets and its biosafety study.

    Directory of Open Access Journals (Sweden)

    Adhiraj Dasgupta

    Full Text Available Chemical reduction of graphene oxide (GO to graphene employs the use of toxic and environmentally harmful reducing agents, hindering mass production of graphene which is of tremendous technological importance. In this study we report a green approach to the synthesis of graphene, bio-reduced by crude polysaccharide. The polysaccharide reduces exfoliated GO to graphene at room temperature in an aqueous medium. Transmission electron microscopy image provides clear evidence for the formation of few layer graphene. Characterization of the resulting polysaccharide reduced GO by Raman spectroscopy, Fourier transform infrared spectroscopy and Energy dispersive X-ray analysis confirms reduction of GO to graphene. We also investigated the degree of biosafety of the reduced GO and found it to be safe under 100 μg/ml.

  3. Few-Layer MoS2 Nanodomains Decorating TiO2 Nanoparticles: A Case Study for the Photodegradation of Carbamazepine

    Directory of Open Access Journals (Sweden)

    Sara Cravanzola

    2018-03-01

    Full Text Available S-doped TiO2 and hybrid MoS2/TiO2 systems have been synthesized, via the sulfidation with H2S of the bare TiO2 and of MoOx supported on TiO2 systems, with the aim of enhancing the photocatalytic properties of TiO2 for the degradation of carbamazepine, an anticonvulsant drug, whose residues and metabolites are usually inefficiently removed in wastewater treatment plants. The focus of this study is to find a relationship between the morphology/structure/surface properties and photoactivity. The full characterization of samples reveals the strong effects of the H2S action on the properties of TiO2, with the formation of defects at the surface, as shown by transmission electron microscopy (TEM and infrared spectroscopy (IR, while also the optical properties are strongly affected by the sulfidation treatment, with changes in the electronic states of TiO2. Meanwhile, the formation of small and thin few-layer MoS2 domains, decorating the TiO2 surface, is evidenced by both high-resolution transmission electron microscopy (HRTEM and UV-Vis/Raman spectroscopies, while Fourier-transform infrared (FTIR spectra give insights into the nature of Ti and Mo surface sites. The most interesting findings of our research are the enhanced photoactivity of the MoS2/TiO2 hybrid photocatalyst toward the carbamazepine mineralization. Surprisingly, the formation of hazardous compounds (i.e., acridine derivatives, usually obtained from carbamazepine, is precluded when treated with MoS2/TiO2 systems.

  4. Photoreflectance study of the near-band-edge transitions of chemical vapor deposition-grown mono- and few-layer MoS{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Kuang-I, E-mail: kilin@mail.ncku.edu.tw [Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan (China); Chen, Yen-Jen; Wang, Bo-Yan; Cheng, Yung-Chen [Department of Materials Science, National University of Tainan, Tainan 70005, Taiwan (China); Chen, Chang-Hsiao, E-mail: chsiaoc@fcu.edu.tw [Department of Automatic Control Engineering, Feng Chia University, Taichung 40724, Taiwan (China)

    2016-03-21

    Room-temperature photoreflectance (PR) and reflectance (R) spectroscopy are utilized to investigate the near-band-edge transitions of molybdenum disulfide (MoS{sub 2}) thin films grown on sapphire substrates by a hot-wall chemical vapor deposition system. The layer thickness and optical properties of the MoS{sub 2} thin films are confirmed by Raman spectroscopy, atomic force microscope, and photoluminescence (PL) analysis. The B exciton shows relatively weak PL intensity in comparing with the A exciton even for monolayer MoS{sub 2} films. In the R spectrum of few‐layer MoS{sub 2}, it is not possible to clearly observe exciton related features. The PR spectra have two sharp, derivative-like features on a featureless background. Throughout the PR lineshape fitting, the transition energies are designated as the A and B excitons at the K-point of the Brillouin zone, but at room temperature there seems to be no distinguishable feature corresponding to an H‐point transition for the mono- and few-layer MoS{sub 2} films unlike in bulk. These transition energies are slightly larger than those obtained by PL, which is attributed to the Stokes shifts related to doping level. The obtained values of valence-band spin-orbit splitting are in good agreement with those from other experimental methods. By comparing the PR lineshapes, the dominant modulation mechanism is attributed to variations of the exciton transition energies due to change in the built-in electric field. On the strength of this study, PR spectroscopy is demonstrated as a powerful technique for characterizing the near-band-edge transitions of MoS{sub 2} from monolayer to bulk.

  5. In Situ Synthesis of Few-Layered g-C3N4with Vertically Aligned MoS2Loading for Boosting Solar-to-Hydrogen Generation.

    Science.gov (United States)

    Bian, Hui; Ji, Yujin; Yan, Junqing; Li, Ping; Li, Ling; Li, Youyong; Frank Liu, Shengzhong

    2018-01-01

    In artificial photocatalytic hydrogen evolution, effective incident photon absorption and a high-charge recombination rate are crucial factors influencing the overall efficiency. Herein, a traditional solid-state synthesis is used to obtain, for the first time, novel samples of few-layered g-C 3 N 4 with vertically aligned MoS 2 loading (MoS 2 /C 3 N 4 ). Thiourea and layered MoO 3 are chosen as precursors, as they react under nitrogen atmosphere to in situ produce the products. According to the quasi-Fourier transform infrared reflectance and X-ray diffraction measurements, the detailed reaction process is determined to proceed through the confirmed formation pathway. The two precursor units MoS 2 and C 3 N 4 are linked by MoN bonds, which act as electronic receivers/conductors and hydrogen-generation sites. Density functional theory is also carried out, which determines that the interface sites act as electron-accumulation regions. According to the photoelectrochemical results, MoS 2 /C 3 N 4 can achieve a current of 0.05 mA cm -2 , which is almost ten times higher than that of bare g-C 3 N 4 or the MoS 2 /C 3 N 4 -R reference samples. The findings in the present work pave the way to not only synthesize a series of designated samples but also thoroughly understand the solid-state reaction. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Surfactant mediated liquid phase exfoliation of graphene

    Science.gov (United States)

    Narayan, Rekha; Kim, Sang Ouk

    2015-10-01

    Commercialization of graphene based applications inevitably requires cost effective mass production. From the early days of research on graphene, direct liquid phase exfoliation (LPE) of graphite has been considered as the most promising strategy to produce high-quality mono or few-layer graphene sheets in solvent dispersion forms. Substantial success has been achieved thus far in the LPE of graphene employing numerous solvent systems and suitable surfactants. This invited review article principally showcase the recent research progress as well as shortcomings of surfactant assisted LPE of graphene. In particular, a comprehensive assessment of the quality and yield of the graphene sheets produced by different categories of the surfactants are summarized. Future direction of LPE methods is also proposed for the eventual success of commercial applications.

  7. Electronic spin transport and spin precession in single graphene layers at room temperature

    NARCIS (Netherlands)

    Tombros, Nikolaos; Jozsa, Csaba; Popinciuc, Mihaita; Jonkman, Harry T.; van Wees, Bart J.

    2007-01-01

    Electronic transport in single or a few layers of graphene is the subject of intense interest at present. The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states, has led to the observation of new electronic

  8. Synthesis of graphene through direct decomposition of CO2 with the ...

    Indian Academy of Sciences (India)

    In this study, few-layered graphene (FLG) has been synthesized using the chemical vapour deposition (CVD) method with the aid of a novel Ni–Ce–Fe trimetallic catalyst. Carbon dioxide was used as the carbon source in the present work. The obtained graphene was characterized by Raman spectroscopy, and the results ...

  9. Chemical adsorption of NiO nanostructures on nickel foam-graphene for supercapacitor applications

    CSIR Research Space (South Africa)

    Bello, A

    2013-10-01

    Full Text Available Few-layer graphene was synthesized on a nickel foam template by chemical vapor deposition. The resulting three-dimensional (3D) graphene was loaded with nickel oxide nanostructures using the successive ionic layer adsorption and reaction technique...

  10. Shear-Assisted Production of Few-Layer Boron Nitride Nanosheets by Supercritical CO2 Exfoliation and Its Use for Thermally Conductive Epoxy Composites.

    Science.gov (United States)

    Tian, Xiaojuan; Li, Yun; Chen, Zhuo; Li, Qi; Hou, Liqiang; Wu, Jiaye; Tang, Yushu; Li, Yongfeng

    2017-12-19

    Boron nitride nanosheets (BNNS) hold the similar two-dimensional structure as graphene and unique properties complementary to graphene, which makes it attractive in application ranging from electronics to energy storage. The exfoliation of boron nitride (BN) still remains challenge and hinders the applications of BNNS. In this work, the preparation of BNNS has been realized by a shear-assisted supercritical CO 2 exfoliation process, during which supercritical CO 2 intercalates and diffuses between boron nitride layers, and then the exfoliation of BN layers is obtained in the rapid depressurization process by overcoming the van der Waals forces. Our results indicate that the bulk boron nitride has been successfully exfoliated into thin nanosheets with an average 6 layers. It is found that the produced BNNS is well-dispersed in isopropyl alcohol (IPA) with a higher extinction coefficient compared with the bulk BN. Moreover, the BNNS/epoxy composite used as thermal interface materials has been prepared. The introduction of BNNS results in a 313% enhancement in thermal conductivity. Our results demonstrate that BNNS produced by supercritical CO 2 exfoliation show great potential applications for heat dissipation of high efficiency electronics.

  11. Graphene on gallium arsenide: Engineering the visibility

    OpenAIRE

    Friedemann, M.; Pierz, K.; Stosch, R.; Ahlers, F. J.

    2009-01-01

    Graphene consists of single or few layers of crystalline ordered carbon atoms. Its visibility on oxidized silicon (Si/SiO\\_2) enabled its discovery and spawned numerous studies of its unique electronic properties. The combination of graphene with the equally unique electronic material gallium arsenide (GaAs) has up to now lacked such easy visibility. Here we demonstrate that a deliberately tailored GaAs/AlAs (aluminum arsenide) multi-layer structure makes graphene just as visible on GaAs as o...

  12. Chirality and grain boundary effects on indentation mechanical properties of graphene coated on nickel foil.

    Science.gov (United States)

    Yan, Yuping; Lv, Jiajiang; Liu, Sheng

    2018-04-20

    We investigate chirality and grain boundary (GB) effects on indentation mechanical properties of graphene coated on nickel foil using molecular dynamics simulations. The models of graphene with different chirality angles, different numbers of layers and tilt GBs were established. It was found that the chirality angle of few-layer graphene had a significant effect on the load bearing capacity of graphene/nickel systems, and this turns out to be more significant when the number of layers is greater than one. The enhancement to the contact stiffness, elastic capacity and the load bearing capacity of graphene with tilt GBs was lower than that of pristine graphene.

  13. Chirality and grain boundary effects on indentation mechanical properties of graphene coated on nickel foil

    Science.gov (United States)

    Yan, Yuping; Lv, Jiajiang; Liu, Sheng

    2018-04-01

    We investigate chirality and grain boundary (GB) effects on indentation mechanical properties of graphene coated on nickel foil using molecular dynamics simulations. The models of graphene with different chirality angles, different numbers of layers and tilt GBs were established. It was found that the chirality angle of few-layer graphene had a significant effect on the load bearing capacity of graphene/nickel systems, and this turns out to be more significant when the number of layers is greater than one. The enhancement to the contact stiffness, elastic capacity and the load bearing capacity of graphene with tilt GBs was lower than that of pristine graphene.

  14. Graphene: from functionalization to devices

    Science.gov (United States)

    Tejeda, Antonio; Soukiassian, Patrick G.

    2014-03-01

    The year 2014 marks the first decade of the rise of graphene. Graphene, a single atomic layer of carbon atoms in sp2 bonding configuration having a honeycomb structure, has now become a well-known and well-established material. Among some of its many outstanding fundamental properties, one can mention a very high carrier mobility, a very large spin diffusion length, unsurpassed mechanical properties as graphene is the strongest material ever measured and an exceptional thermal conductivity scaling more than one order of magnitude above that of copper. After the first years of the graphene rush, graphene growth is now well controlled using various methods like epitaxial growth on silicon carbide substrate, chemical vapour deposition (CVD) or plasma techniques on metal, insulator or semiconductor substrates. More applied research is now taking over the initial studies on graphene production. Indeed, graphene is a promising material for many advanced applications such as, but not limited to, electronic, spintronics, sensors, photonics, micro/nano-electromechanical (MEMS/NEMS) systems, super-capacitors or touch-screen technologies. In this context, this Special Issue of the Journal of Physics D: Applied Physics on graphene reviews some of the recent achievements, progress and prospects in this field. It includes a collection of seventeen invited articles covering the current status and future prospects of some selected topics of strong current interest. This Special Issue is organized in four sections. The first section is dedicated to graphene devices, and opens with an article by de Heer et al on an investigation of integrating graphene devices with silicon complementary metal-oxide-semiconductor (CMOS) technology. Then, a study by Svintsov et al proposes a lateral all-graphene tunnel field-effect transistor (FET) with a high on/off current switching ratio. Next, Tsukagoshi et al present how a band-gap opening occurs in a graphene bilayer by using a perpendicular

  15. Nitrogen-Doped Graphene Sheets Grown by Chemical Vapor Deposition: Synthesis and Influence of Nitrogen Impurities on Carrier Transport

    OpenAIRE

    Lu, Yu-Fen; Lo, Shun-Tsung; Lin, Jheng-Cyuan; Zhang, Wenjing; Lu, Jing-Yu; Liu, Fan-Hung; Tseng, Chuan-Ming; Lee, Yi-Hsien; Liang, Chi-Te; Li, Lain-Jong

    2013-01-01

    A significant advance toward achieving practical applications of graphene as a two-dimensional material in nanoelectronics would be provided by successful synthesis of both n-type and p-type doped graphene. However reliable doping and a thorough understanding of carrier transport in the presence of charged impurities governed by ionized donors or acceptors in the graphene lattice are still lacking. Here we report experimental realization of few-layer nitrogen-doped (N-doped) graphene sheets b...

  16. Integration of the Ferromagnetic Insulator EuO onto Graphene

    OpenAIRE

    Swartz, Adrian G.; Odenthal, Patrick M.; Hao, Yufeng; Ruoff, Rodney S.; Kawakami, Roland K.

    2013-01-01

    We have demonstrated the deposition of EuO films on graphene by reactive molecular beam epitaxy in a special adsorption-controlled and oxygen-limited regime, which is a critical advance toward the realization of the exchange proximity interaction (EPI). It has been predicted that when the ferromagnetic insulator (FMI) EuO is brought into contact with graphene, an overlap of electronic wavefunctions at the FMI/graphene interface can induce a large spin splitting inside the graphene. Experiment...

  17. Green reduction of graphene oxide via Lycium barbarum extract

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Dandan, E-mail: houdandan114@163.com; Liu, Qinfu, E-mail: lqf@cumtb.edu.cn; Cheng, Hongfei, E-mail: h.cheng@cumtb.edu.cn; Zhang, Hao, E-mail: 1073261516@qq.com; Wang, Sen, E-mail: wscumtb@163.com

    2017-02-15

    The synthesis of graphene from graphene oxide (GO) usually involves toxic reducing agents that are harmful to human health and the environment. Here, we report a facile approach for effective reduction of GO, for the first time, using Lycium barbarum extract as a green and natural reducing agent. The morphology and de-oxidation efficiency of the reduced graphene were characterized and results showed that Lycium barbarum extract can effectively reduce GO into few layered graphene with a high carbon to oxygen ratio (6.5), comparable to that of GO reduced by hydrazine hydrate (6.6). The possible reduction mechanism of GO may be due to the active components existing in Lycium barbarum fruits, which have high binding affinity to the oxygen containing groups to form their corresponding oxides and other by-products. This method avoided the use of any nocuous chemicals, thus facilitating the mass production of graphene and graphene-based bio-materials. - Graphical abstract: Schematic illustration of the preparation of reduced graphene by Lycium barbarum extract. - Highlights: • The Lycium barbarum extract was used for the reduction of graphene oxide. • The obtained few layered graphene exhibited high carbon to oxygen ratio. • This approach can be applied in the preparation of graphene-based bio-materials.

  18. Eco-Friendly Synthesis and Characterization of Reduced Graphene Oxide

    Science.gov (United States)

    Ickecan, D.; Zan, R.; Nezir, S.

    2017-09-01

    Graphene is a single sheet of sp2 bonded carbon having a two-dimensional (2D) layer. It has remarkable electronic, mechanical and thermal properties. In this paper, the graphene oxide (GO) was reduced by reducing chemicals such as ascorbic acid and hydrazine and then characterized by transmission electron microscopy (TEM), Raman spectroscopy and Fourier transform infrared spectroscopy. TEM results of the chemically reduced graphene were showed that the structure consists of a mixture of single and few layers of reduced graphene oxide (rGO).

  19. Calculation of electron spectra and some problems in the thermodynamics of graphene layers

    Energy Technology Data Exchange (ETDEWEB)

    Alisultanov, Z. Z., E-mail: zaur0102@gmail.com [Russian Academy of Sciences, Prokhorov General Physics Institute (Russian Federation)

    2016-02-15

    The expressions for the energy spectra of monolayer, bilayer, and multilayer graphene, as well as epitaxial graphene, are derived using the quantum Green’s functions method. Analytic expressions are obtained for the densities of states of these systems. It is shown that a bandgap can appear the spectrum of an epitaxial graphene bilayer. A number of problems in the thermodynamics of electrons in free and epitaxial graphene layers are considered as applications. Analytic expressions are obtained for the chemical potential and heat capacity in the limiting cases of low and high temperatures. Quantum oscillations of heat capacity in graphene are analyzed taking into account the Coulomb interaction. The Berry phase of epitaxial graphene is investigated.

  20. Nanometer-scale lithography on microscopically clean graphene

    DEFF Research Database (Denmark)

    van Dorp, W. F.; Zhang, X.; Feringa, B. L.

    2011-01-01

    Focused-electron-beam-induced deposition, or FEBID, enables the fabrication of patterns with sub-10 nm resolution. The initial stages of metal deposition by FEBID are still not fundamentally well understood. For these investigations, graphene, a one-atom-thick sheet of carbon atoms in a hexagonal...... lattice, is ideal as the substrate for FEBID writing. In this paper, we have used exfoliated few-layer graphene as a support to study the early growth phase of focused-electron-beam-induced deposition and to write patterns with dimensions between 0.6 and 5 nm. The results obtained here are compared...... to the deposition behavior on amorphous materials. Prior to the deposition experiment, the few-layer graphene was cleaned. Typically, it is observed in electron microscope images that areas of microscopically clean graphene are surrounded by areas with amorphous material. We present a method to remove the amorphous...

  1. In Situ Electronic Characterization of Graphene Nanoconstrictions Fabricated in a Transmission Electron Microscope

    OpenAIRE

    Lu, Ye; Merchant, Christopher A.; Drndić, Marija; Johnson, A. T. Charlie

    2011-01-01

    We report electronic measurements on high-quality graphene nanoconstrictions (GNCs) fabricated in a transmission electron microscope (TEM), and the first measurements on GNC conductance with an accurate measurement of constriction width down to 1 nm. To create the GNCs, freely-suspended graphene ribbons were fabricated using few-layer graphene grown by chemical vapor deposition. The ribbons were loaded into the TEM, and a current-annealing procedure was used to clean the material and improve ...

  2. 2D vibrational properties of epitaxial silicene on Ag(111)

    Science.gov (United States)

    Solonenko, Dmytro; Gordan, Ovidiu D.; Le Lay, Guy; Sahin, Hasan; Cahangirov, Seymur; Zahn, Dietrich R. T.; Vogt, Patrick

    2017-03-01

    The two-dimensional silicon allotrope, silicene, could spur the development of new and original concepts in Si-based nanotechnology. Up to now silicene can only be epitaxially synthesized on a supporting substrate such as Ag(111). Even though the structural and electronic properties of these epitaxial silicene layers have been intensively studied, very little is known about its vibrational characteristics. Here, we present a detailed study of epitaxial silicene on Ag(111) using in situ Raman spectroscopy, which is one of the most extensively employed experimental techniques to characterize 2D materials, such as graphene, transition metal dichalcogenides, and black phosphorous. The vibrational fingerprint of epitaxial silicene, in contrast to all previous interpretations, is characterized by three distinct phonon modes with A and E symmetries. Both, energies and symmetries of theses modes are confirmed by ab initio theory calculations. The temperature dependent spectral evolution of these modes demonstrates unique thermal properties of epitaxial silicene and a significant electron-phonon coupling. These results unambiguously support the purely two-dimensional character of epitaxial silicene up to about 300 °C, whereupon a 2D-to-3D phase transition takes place. The detailed fingerprint of epitaxial silicene will allow us to identify it in different environments or to study its modifications.

  3. Discrete Dynamics of Nanoparticle Channelling in Suspended Graphene

    DEFF Research Database (Denmark)

    Booth, Tim; Pizzocchero, Filippo; Andersen, Henrik

    2011-01-01

    We have observed a previously undescribed stepwise oxidation of mono- and few layer suspended graphene by silver nanoparticles in situ at subnanometer scale in an environmental transmission electron microscope. Over the range of 600–850 K, we observe crystallographically oriented channelling...

  4. Observation of multilayer graphene sheets using terahertz phase ...

    Indian Academy of Sciences (India)

    Based on this fact, a simple route is presented for identifying the single or few layers of graphene sheets by using terahertz phase contrast microscopy (TPCM). ... School of Communication and Information Engineering, Key Laboratory of Specialty Fibre Optics and Optical Access Networks, Shanghai University, Shanghai ...

  5. Preparation of graphene by electrical explosion of graphite sticks.

    Science.gov (United States)

    Gao, Xin; Xu, Chunxiao; Yin, Hao; Wang, Xiaoguang; Song, Qiuzhi; Chen, Pengwan

    2017-08-03

    Graphene nanosheets were produced by electrical explosion of high-purity graphite sticks in distilled water at room temperature. The as-prepared samples were characterized by various techniques to find different forms of carbon phases, including graphite nanosheets, few-layer graphene, and especially, mono-layer graphene with good crystallinity. Delicate control of energy injection is critical for graphene nanosheet formation, whereas mono-layer graphene was produced under the charging voltage of 22.5-23.5 kV. On the basis of electrical wire explosion and our experimental results, the underlying mechanism that governs the graphene generation was carefully illustrated. This work provides a simple but innovative route for producing graphene nanosheets.

  6. Nanometer-scale lithography on microscopically clean graphene

    International Nuclear Information System (INIS)

    Van Dorp, W F; De Hosson, J Th M; Zhang, X; Feringa, B L; Wagner, J B; Hansen, T W

    2011-01-01

    Focused-electron-beam-induced deposition, or FEBID, enables the fabrication of patterns with sub-10 nm resolution. The initial stages of metal deposition by FEBID are still not fundamentally well understood. For these investigations, graphene, a one-atom-thick sheet of carbon atoms in a hexagonal lattice, is ideal as the substrate for FEBID writing. In this paper, we have used exfoliated few-layer graphene as a support to study the early growth phase of focused-electron-beam-induced deposition and to write patterns with dimensions between 0.6 and 5 nm. The results obtained here are compared to the deposition behavior on amorphous materials. Prior to the deposition experiment, the few-layer graphene was cleaned. Typically, it is observed in electron microscope images that areas of microscopically clean graphene are surrounded by areas with amorphous material. We present a method to remove the amorphous material in order to obtain large areas of microscopically clean graphene flakes. After cleaning, W(CO) 6 was used as the precursor to study the early growth phase of FEBID deposits. It was observed that preferential adsorption of the precursor molecules on step edges and adsorbates plays a key role in the deposition on cleaned few-layer graphene.

  7. Graphene synthesis by laser-assisted chemical vapor deposition on Ni plate and the effect of process parameters on uniform graphene growth

    International Nuclear Information System (INIS)

    Jiang, Juan; Lin, Zhe; Ye, Xiaohui; Zhong, Minlin; Huang, Ting; Zhu, Hongwei

    2014-01-01

    A fast, simple technique was developed to fabricate few-layer graphene films at ambient pressure and room temperature by laser-assisted chemical vapor deposition on polycrystalline Ni plates. Laser scanning speed was found as the most important factor in the production of few-layer graphene. The quality of graphene films was controlled by varying the laser power. Uniform graphene ribbons with a width of 1.5 mm and a length of 16 mm were obtained at a scanning speed of 1.3 mm/s and a laser power of 600 W. The developed technique provided a promising application of a high-power laser system to fabricate a graphene film. - Highlights: • Uniform few-layer graphene was fabricated at room temperature and ambient conditions. • Laser-assisted chemical vapor deposition was used to grow the layers in a few seconds. • The effect of process parameters on graphene growth was discussed. • This cost effective method could facilitate the integration of graphene in electronic devices

  8. Three dimensional graphene scaffold for cardiac tissue engineering and in-situ electrical recording.

    Science.gov (United States)

    Ameri, S K; Singh, P K; D'Angelo, R; Stoppel, W; Black, L; Sonkusale, S R

    2016-08-01

    In this paper, we present a three-dimensional graphene foam made of few layers of CVD grown graphene as a scaffold for growing cardiac cells and recording their electrical activity. Our results show that graphene foam not only provides an excellent extra-cellular matrix (ECM) for the culture of such electrogenic cells but also enables recording of its extracellular electrical activity in-situ. Recording is possible due to graphene's excellent conductivity. In this paper, we present our results on the fabrication of the graphene scaffold and initial studies on the culture of cardiac cell lines such as HL-1 and recording of their real-time electrical activity.

  9. Graphene monofluoride: a wide bandgap material derived from graphene

    Science.gov (United States)

    Zhu, Jun

    2011-03-01

    Fluorination provides an effective way of controlling the properties of carbon materials. In this talk, I will describe our experimental and theoretical work on the synthesis, structural, electrical and optical properties of fully fluorinated graphene and graphite, i. e., graphene monofluoride CF and graphite monofluoride (CF)n . (CF)n is synthesized by reacting HOPG graphite with F2 gas at high temperature. Transmission electron microscopy and electron diffraction measurements show crystalline few-layer CF with a lattice constant 4% larger than that of graphene, in good agreement with first principle calculations. We observe the Eg and A1 g Raman modes of graphene monofluoride using UV Raman spectroscopy. Photoluminescence measurements of (CF)n using variable excitation wavelength (244-514 nm) and temperature (5-295 K) show several emission modes in the visible spectrum, which likely originate from mid-gap defect states. The absence of the band edge emission suggests a large band gap of greater than 5 eV. Partially fluorinated graphene fluoride exhibits non-linear, strongly insulating transport with variable-range hopping temperature dependence, consistent with the presence of localized states due to missing fluorine atoms. Highly conductive graphene can be recovered by annealing CF in Ar/H2 at high temperature, resulting in a conductance improvement of five orders of magnitude. As a transparent and atomically thin insulator, graphene monofluoride may find its use in graphene electronics and photonics. In collaboration with: Bei Wang, Shih-Ho Cheng, Justin Sparks, Humberto Gutierrez, Ke Zou, Ning Shen, Youjian Tang, Qingzhen Hao, Awnish Gupta, Peter Eklund, Vincent Crespi, Jorge Sofo and Fujio Okino (Shinshu University, Japan). References: Cheng et al, ``Reversible fluorination of graphene: towards a two-dimensional wide band gap semiconductor,'' Phys. Rev. B 81, 205435 (2010) Wang et al, ``Photoluminescence from nanocrystalline graphite monofluoride,'' Appl. Phys

  10. Synthesis of Highly Reduced Graphene Oxide for Supercapacitor

    Directory of Open Access Journals (Sweden)

    Chubei Wang

    2016-01-01

    Full Text Available A facile method to synthesize highly reduced graphene oxide in solid phase was developed. The reduced graphene oxide was scarcely prepared in solid phase. Solid substances act as spacers and pillaring agents. Sheets can not be close to each other in reduction process, and sheets agglomeration might not form. After reduction reaction is complete, the spacers and pillaring agents are removed. The average interlayer spacing and surface area of product are bigger than those of reduced graphene oxide. The product has few-layered sheet, and the ratio of carbon to oxygen is high, which might imply that the product is more similar to graphene compared to reduced graphene oxide. The specific capacitance of product is almost three times higher than that of reduced graphene oxide at the same current density.

  11. Green reduction of graphene oxide via Lycium barbarum extract

    Science.gov (United States)

    Hou, Dandan; Liu, Qinfu; Cheng, Hongfei; Zhang, Hao; Wang, Sen

    2017-02-01

    The synthesis of graphene from graphene oxide (GO) usually involves toxic reducing agents that are harmful to human health and the environment. Here, we report a facile approach for effective reduction of GO, for the first time, using Lycium barbarum extract as a green and natural reducing agent. The morphology and de-oxidation efficiency of the reduced graphene were characterized and results showed that Lycium barbarum extract can effectively reduce GO into few layered graphene with a high carbon to oxygen ratio (6.5), comparable to that of GO reduced by hydrazine hydrate (6.6). The possible reduction mechanism of GO may be due to the active components existing in Lycium barbarum fruits, which have high binding affinity to the oxygen containing groups to form their corresponding oxides and other by-products. This method avoided the use of any nocuous chemicals, thus facilitating the mass production of graphene and graphene-based bio-materials.

  12. Experimental Methods for Implementing Graphene Contacts to Finite Bandgap Semiconductors

    DEFF Research Database (Denmark)

    Meyer-Holdt, Jakob

    Present Ph.D. thesis describes my work on implanting graphene as electrical contact to finite bandgap semiconductors. Different transistor architectures, types of graphene and finite bandgap semiconductors have been employed. The device planned from the beginning of my Ph.D. fellowship...... contacts to semiconductor nanowires, more specifically, epitaxially grown InAs nanowires. First, we tried a top down method where CVD graphene was deposited on substrate supported InAs nanowires followed by selective graphene ashing to define graphene electrodes. While electrical contact between...

  13. First direct observation of a nearly ideal graphene band structure

    Energy Technology Data Exchange (ETDEWEB)

    Sprinkle, M.; Siegel, D.; Hu, Y.; Hicks, J.; Tejeda, A.; Taleb-Ibrahimi, A.; Le Fèvre, P.; Bertran, F.; Vizzini, S.; Enriquez, H.; Chiang, S.; Soukiassian, P.; Berger, C.; de Heer, W.A.; Lanzara, A.; Conrad, E.H.; (CNRS-UMR); (UCB); (CEAS); (SOLEIL); (GIT)

    2009-12-10

    Angle-resolved photoemission and x-ray diffraction experiments show that multilayer epitaxial graphene grown on the SiC(000{bar 1}) surface is a new form of carbon that is composed of effectively isolated graphene sheets. The unique rotational stacking of these films causes adjacent graphene layers to electronically decouple leading to a set of nearly independent linearly dispersing bands (Dirac cones) at the graphene K point. Each cone corresponds to an individual macroscale graphene sheet in a multilayer stack where AB-stacked sheets can be considered as low density faults.

  14. First direct observation of a nearly ideal graphene band structure.

    Science.gov (United States)

    Sprinkle, M; Siegel, D; Hu, Y; Hicks, J; Tejeda, A; Taleb-Ibrahimi, A; Le Fèvre, P; Bertran, F; Vizzini, S; Enriquez, H; Chiang, S; Soukiassian, P; Berger, C; de Heer, W A; Lanzara, A; Conrad, E H

    2009-11-27

    Angle-resolved photoemission and x-ray diffraction experiments show that multilayer epitaxial graphene grown on the SiC(0001) surface is a new form of carbon that is composed of effectively isolated graphene sheets. The unique rotational stacking of these films causes adjacent graphene layers to electronically decouple leading to a set of nearly independent linearly dispersing bands (Dirac cones) at the graphene K point. Each cone corresponds to an individual macroscale graphene sheet in a multilayer stack where AB-stacked sheets can be considered as low density faults.

  15. Thin epitaxial silicon detectors

    International Nuclear Information System (INIS)

    Stab, L.

    1989-01-01

    Manufacturing procedures of thin epitaxial surface barriers will be given. Some improvements have been obtained: larger areas, lower leakage currents and better resolutions. New planar epitaxial dE/dX detectors, made in a collaboration work with ENERTEC-INTERTECHNIQUE, and a new application of these thin planar diodes to EXAFS measurements, made in a collaboration work with LURE (CNRS,CEA,MEN) will also be reported

  16. High-quality AlN films grown on chemical vapor-deposited graphene films

    Directory of Open Access Journals (Sweden)

    Chen Bin-Hao

    2016-01-01

    Full Text Available We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

  17. 1/f noise in graphene nanopores

    International Nuclear Information System (INIS)

    Heerema, S J; Schneider, G F; Rozemuller, M; Vicarelli, L; Zandbergen, H W; Dekker, C

    2015-01-01

    Graphene nanopores are receiving great attention due to their atomically thin membranes and intrinsic electrical properties that appear greatly beneficial for biosensing and DNA sequencing. Here, we present an extensive study of the low-frequency 1/f noise in the ionic current through graphene nanopores and compare it to noise levels in silicon nitride pore currents. We find that the 1/f noise magnitude is very high for graphene nanopores: typically two orders of magnitude higher than for silicon nitride pores. This is a drawback as it significantly lowers the signal-to-noise ratio in DNA translocation experiments. We evaluate possible explanations for these exceptionally high noise levels in graphene pores. From examining the noise for pores of different diameters and at various salt concentrations, we find that in contrast to silicon nitride pores, the 1/f noise in graphene pores does not follow Hooge’s relation. In addition, from studying the dependence on the buffer pH, we show that the increased noise cannot be explained by charge fluctuations of chemical groups on the pore rim. Finally, we compare single and bilayer graphene to few-layer and multi-layer graphene and boron nitride (h-BN), and we find that the noise reduces with layer thickness for both materials, which suggests that mechanical fluctuations may be the underlying cause of the high 1/f noise levels in monolayer graphene nanopore devices. (paper)

  18. Multiscale investigation of graphene layers on 6H-SiC(000-1)

    OpenAIRE

    Tiberj, Antoine; Huntzinger, Jean-Roch; Camassel, Jean; Hiebel, Fanny; Mahmood, Ather; Mallet, Pierre; Naud, Cecile; Veuillen, Jean-Yves

    2011-01-01

    Abstract In this article, a multiscale investigation of few graphene layers grown on 6H-SiC(000-1) under ultrahigh vacuum (UHV) conditions is presented. At 100-μm scale, the authors show that the UHV growth yields few layer graphene (FLG) with an average thickness given by Auger spectroscopy between 1 and 2 graphene planes. At the same scale, electron diffraction reveals a significant rotational disorder between the first graphene layer and the SiC surface, although well-defined preferre...

  19. One-Step Ball Milling Preparation of Nanoscale CL-20/Graphene Oxide for Significantly Reduced Particle Size and Sensitivity

    Science.gov (United States)

    Ye, Baoyun; An, Chongwei; Zhang, Yuruo; Song, Changkun; Geng, Xiaoheng; Wang, Jingyu

    2018-02-01

    A one-step method which involves exfoliating graphite materials (GIMs) off into graphene materials (GEMs) in aqueous suspension of CL-20 and forming CL-20/graphene materials (CL-20/GEMs) composites by using ball milling is presented. The conversion of mixtures to composite form was monitored by scanning electron microscopy (SEM) and powder X-ray diffraction (XRD). The impact sensitivities of CL-20/GEM composites were contrastively investigated. It turned out that the energetic nanoscale composites based on CL-20 and GEMs comprising few layers were accomplished. The loading capacity of graphene (reduced graphene oxide, rGO) is significantly less than that of graphene oxide (GO) in CL-20/GEM composites. The formation mechanism was proposed. Via this approach, energetic nanoscale composites based on CL-20 and GO comprised few layers were accomplished. The resulted CL-20/GEM composites displayed spherical structure with nanoscale, ɛ-form, equal thermal stabilities, and lower sensitivities.

  20. Direct Synthesis of Fe3C-Functionalized Graphene by High Temperature Autoclave Pyrolysis for Oxygen Reduction

    DEFF Research Database (Denmark)

    Hu, Yang; Jensen, Jens Oluf; Zhang, Wei

    2014-01-01

    We present a novel approach to direct fabrication of few-layer graphene sheets with encapsulated Fe3C nanoparticles from pyrolysis of volatile non-graphitic precursors without any substrate. This one-step autoclave approach is facile and potentially scalable for production. Tested as an electroca......We present a novel approach to direct fabrication of few-layer graphene sheets with encapsulated Fe3C nanoparticles from pyrolysis of volatile non-graphitic precursors without any substrate. This one-step autoclave approach is facile and potentially scalable for production. Tested...

  1. Graphene oxide and reduced graphene oxide studied by the XRD, TEM and electron spectroscopy methods

    International Nuclear Information System (INIS)

    Stobinski, L.; Lesiak, B.; Malolepszy, A.; Mazurkiewicz, M.; Mierzwa, B.; Zemek, J.; Jiricek, P.; Bieloshapka, I.

    2014-01-01

    Highlights: • Graphene oxide (FL-GOc) and reduced graphene oxide (FL-RGOc): XRD, TEM, XPS, REELS. • FL-GOc: stacking nanostructure—22 × 6 nm (DxH), 0.9 nm layers separation (XRD). • FL-RGOc: stacking nanostructure—8 × 1 nm (DxH), 0.4 nm layers separation (XRD). • Reduction: oxygen group degradation, decreasing distance between graphene layers. • Number of graphene layers in stacking nanostructure: 6–7 (FL-GOc), 2–3 (FL-RGOc). - Abstract: The commercial and synthesised few-layer graphene oxide, prepared using oxidation reactions, and few-layer reduced graphene oxide samples were structurally and chemically investigated by the X-ray diffraction (XRD), transmission electron microscopy (TEM) and electron spectroscopy methods, i.e. X-ray photoelectron spectroscopy (XPS) and reflection electron energy loss spectroscopy (REELS). The commercial graphene oxide (FL-GOc) shows a stacking nanostructure of about 22 × 6 nm average diameter by height with the distance of 0.9 nm between 6-7 graphene layers, whereas the respective reduced graphene oxide (FL-RGOc)—about 8 × 1 nm average diameter by height stacking nanostructure with the distance of 0.4 nm between 2-3 graphene layers (XRD). The REELS results are consistent with those by the XRD indicating 8 (FL-GOc) and 4 layers (FL-RGOc). In graphene oxide and reduced graphene oxide prepared from the graphite the REELS indicates 8–11 and 7–10 layers. All graphene oxide samples show the C/O ratio of 2.1–2.3, 26.5–32.1 at% of C sp 3 bonds and high content of functional oxygen groups (hydroxyl—C-OH, epoxy—C-O-C, carbonyl—C=O, carboxyl—C-OOH, water) (XPS). Reduction increases the C/O ratio to 2.8–10.3, decreases C sp 3 content to 11.4–20.3 at% and also the content of C-O-C and C=O groups, accompanied by increasing content of C-OH and C-OOH groups. Formation of additional amount of water due to functional oxygen group reduction leads to layer delamination. Removing of functional oxygen groups

  2. How perfect can graphene be?

    Czech Academy of Sciences Publication Activity Database

    Neugebauer, P.; Orlita, Milan; Faugeras, C.; Barra, A. L.; Potemski, M.

    2009-01-01

    Roč. 103, č. 13 (2009), 136403/1-136403/4 ISSN 0031-9007 R&D Projects: GA AV ČR KAN400100652 Grant - others:ANR(FR) ANR-06-NANO-019 Institutional research plan: CEZ:AV0Z10100521 Keywords : multilayer epitaxial graphene * Dirac fermions * magnetic field Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.328, year: 2009

  3. MoS2 Nanoparticles Grown on Graphene: An Advanced Catalyst for Hydrogen Evolution Reaction

    OpenAIRE

    Li, Yanguang; Wang, Hailiang; Xie, Liming; Liang, Yongye; Hong, Guosong; Dai, Hongjie

    2011-01-01

    Advanced materials for electrocatalytic and photoelectrochemical water splitting are central to the area of renewable energy. Here, we developed a solvothermal synthesis of MoS2 nanoparticles selectively on reduced graphene oxide (RGO) sheets suspended in solution. The resulting MoS2/RGO hybrid material possessed nanoscopic few-layer MoS2 structures with abundant exposed edges stacked onto graphene, in strong contrast to large aggregated MoS2 particles grown freely in solution without GO. The...

  4. A facile molten-salt route to graphene synthesis.

    Science.gov (United States)

    Liu, Xiaofeng; Giordano, Cristina; Antonietti, Markus

    2014-01-15

    Efficient synthetic routes are continuously pursued for graphene in order to implement its applications in different areas. However, direct conversion of simple monomers to graphene through polymerization in a scalable manner remains a major challenge for chemists. Herein, a molten-salt (MS) route for the synthesis of carbon nanostructures and graphene by controlled carbonization of glucose in molten metal chloride is reported. In this process, carbohydrate undergoes polymerization in the presence of strongly interacting ionic species, which leads to nanoporous carbon with amorphous nature and adjustable pore size. At a low precursor concentration, the process converts the sugar molecules (glucose) to rather pure few-layer graphenes. The MS-derived graphenes are strongly hydrophobic and exhibit remarkable selectivity and capacity for absorption of organics. The methodology described may open up a new avenue towards the synthesis and manipulation of carbon materials in liquid media. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Molecular beam epitaxy

    CERN Document Server

    Pamplin, Brian R

    1980-01-01

    Molecular Beam Epitaxy introduces the reader to the use of molecular beam epitaxy (MBE) in the generation of III-V and IV-VI compounds and alloys and describes the semiconductor and integrated optics reasons for using the technique. Topics covered include semiconductor superlattices by MBE; design considerations for MBE systems; periodic doping structure in gallium arsenide (GaAs); nonstoichiometry and carrier concentration control in MBE of compound semiconductors; and MBE techniques for IV-VI optoelectronic devices. The use of MBE to fabricate integrated optical devices and to study semicond

  6. Transparent conductive graphene electrode in GaN-based ultra-violet light emitting diodes.

    Science.gov (United States)

    Kim, Byung-Jae; Mastro, Michael A; Hite, Jennifer; Eddy, Charles R; Kim, Jihyun

    2010-10-25

    We report a graphene-based transparent conductive electrode for use in ultraviolet (UV) GaN light emitting diodes (LEDs). A few-layer graphene (FLG) layer was mechanically deposited. UV light at a peak wavelength of 368 nm was successfully emitted by the FLG layer as transparent contact to p-GaN. The emission of UV light through the thin graphene layer was brighter than through the thick graphene layer. The thickness of the graphene layer was characterized by micro-Raman spectroscopy. Our results indicate that this novel graphene-based transparent conductive electrode holds great promise for use in UV optoelectronics for which conventional ITO is less transparent than graphene.

  7. Layer-dependent supercapacitance of graphene films grown by chemical vapor deposition on nickel foam

    KAUST Repository

    Chen, Wei

    2013-03-01

    High-quality, large-area graphene films with few layers are synthesized on commercial nickel foams under optimal chemical vapor deposition conditions. The number of graphene layers is adjusted by varying the rate of the cooling process. It is found that the capacitive properties of graphene films are related to the number of graphene layers. Owing to the close attachment of graphene films on the nickel substrate and the low charge-transfer resistance, the specific capacitance of thinner graphene films is almost twice that of the thicker ones and remains stable up to 1000 cycles. These results illustrate the potential for developing high-performance graphene-based electrical energy storage devices. © 2012 Elsevier B.V. All rights reserved.

  8. Crystalline CoFeB/graphite interfaces for carbon spintronics fabricated by solid phase epitaxy

    NARCIS (Netherlands)

    Wong, P.K.J.; van Geijn, Elmer; van Geijn, E.; Zhang, W.; Starikov, A.A.; Tran, T. Lan Ahn; Sanderink, Johannes G.M.; Siekman, Martin Herman; Brocks, Gerardus H.L.A.; Kelly, Paul J.; van der Wiel, Wilfred Gerard; de Jong, Machiel Pieter

    2013-01-01

    Structurally ordered interfaces between ferromagnetic electrodes and graphene or graphite are of great interest for carbon spintronics, since they allow spin-filtering due to k-vector conservation. By solid phase epitaxy of amorphous/nanocrystalline CoFeB at elevated temperatures, the feasibility of

  9. Electrochemically cathodic exfoliation of graphene sheets in room temperature ionic liquids N-butyl, methylpyrrolidinium bis(trifluoromethylsulfonyl)imide and their electrochemical properties

    International Nuclear Information System (INIS)

    Yang, Yingchang; Lu, Fang; Zhou, Zhou; Song, Weixin; Chen, Qiyuan; Ji, Xiaobo

    2013-01-01

    Graphical abstract: Electrochemically cathodic exfoliation of graphite into few-layer graphene sheets in room temperature ionic liquids (RTILs) N-butyl, methylpyrrolidinium bis(trifluoromethylsulfonyl)-imide (BMPTF 2 N). -- Highlights: • Few-layer graphene sheets were prepared through electrochemically cathodic exfoliation in room temperature ionic liquids. • The mechanism of cathodic exfoliation in ionic liquids was proposed. • The derived activated graphene sheets show enhanced electrochemical properties. -- Abstract: Electrochemically cathodic exfoliation in room temperature ionic liquids N-butyl, methylpyrrolidinium bis(trifluoromethylsulfonyl)-imide (BMPTF 2 N) has been developed for few-layer graphene sheets, demonstrating low levels of oxygen (2.7 at% of O) with a nearly perfect structure (I D /I G 2 N involves the intercalation of ionic liquids cation [BMP] + under highly negatively charge followed by graphite expansion. Porous activated graphene sheets were also obtained by activation of graphene sheets in KOH. Transmission electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy were used to characterize these graphene materials. The electrochemical performances of the graphene sheets and porous activated graphene sheets for lithium-ion battery anode materials were evaluated using cyclic voltammetry, galvanostatic charge–discharge cycling, and electrochemical impedance spectroscopy

  10. Porous graphene-based membranes for water purification from metal ions at low differential pressures.

    Science.gov (United States)

    Park, Jaewoo; Bazylewski, Paul; Fanchini, Giovanni

    2016-05-14

    A new generation of membranes for water purification based on weakly oxidized and nanoporous few-layer graphene is here introduced. These membranes dramatically decrease the high energy requirements of water purification by reverse osmosis. They combine the advantages of porous and non-oxidized single-layer graphene, offering energy-efficient water filtration at relatively low differential pressures, and highly oxidized graphene oxide, exhibiting high performance in terms of impurity adsorption. In the reported fabrication process, leaks between juxtaposed few-layer graphene flakes are sealed by thermally annealed colloidal silica, in a treatment that precedes the opening of (sub)nanometre-size pores in graphene. This process, explored for the first time in this work, results in nanoporous graphene flakes that are water-tight at the edges without occluding the (sub)nanopores. With this method, removal of impurities from water occurs through a combination of size-based pore rejection and pore-edge adsorption. Thinness of graphene flakes allows these membranes to achieve water purification from metal ions in concentrations of few parts-per-million at differential pressures as low as 30 kPa, outperforming existing graphene or graphene oxide purification systems with comparable flow rates.

  11. Chrysanthemum extract assisted green reduction of graphene oxide

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Dandan, E-mail: houdandan114@163.com; Liu, Qinfu, E-mail: lqf@cumtb.edu.cn; Cheng, Hongfei, E-mail: h.cheng@cumtb.edu.cn; Li, Kuo, E-mail: cumtblk@163.com; Wang, Ding, E-mail: wangding0313@163.com; Zhang, Hao, E-mail: 1073261516@qq.com

    2016-11-01

    The chemical reduction of graphene oxide (GO) usually involves highly toxic reducing agents which are injurious to the environment and human health. In the present study, chrysanthemum extract, as a natural and harmless reductant, mediated facile and green approach for the preparation of reduced GO (RGO) was reported for the first time. The reduction experiments of GO were conducted at room temperature, and the obtained RGO was few layered and exhibited high carbon to oxygen ratio (4.96) as demonstrated by transmission electron microscope (TEM) and X-ray photoelectron spectroscopy (XPS), respectively. The mechanism for removing of oxygen-containing functional groups from GO with chrysanthemum extract was proposed. The features of environmentally friendly and cost-effectively endow this approach with great promise in the preparation of various graphene-based materials, especially for biomaterials. - Highlights: • The chrysanthemum extract was used for the reduction of graphene oxide. • The obtained few layered graphene exhibited high carbon to oxygen ratio. • The mechanism for reduction of graphene oxide with chrysanthemum was proposed. • This approach can be applied in the preparation of graphene-based bio-materials.

  12. Brominated graphene as a versatile precursor for multifunctional grafting.

    Science.gov (United States)

    Au, Heather; Rubio, Noelia; Shaffer, Milo S P

    2018-01-07

    A non-destructive and versatile chemical reduction method was used to dissolve and subsequently brominate few-layer graphene sheets (FLGs); the direct covalent attachment of bromine to the graphene framework was demonstrated by X-ray photoelectron spectroscopy (XPS). The brominated few-layer graphenes (FLG-Br) provide a convenient, stable, liquid-phase precursor, suitable for the synthesis of a variety of directly functionalised graphenes. As an example, the FLG-Br species was used to initiate atom transfer radical polymerisation (ATRP), to obtain poly(methyl methacrylate) (PMMA)-grafted graphene (FLG-PMMA), which was six times more dispersible in acetone than controls. In addition, the FLG-Br is active for nucleophilic substitution reactions, as illustrated by the preparation of methoxypolyethylene glycol (mPEG)- and OH-substituted derivatives. The products were characterised by thermogravimetric analysis coupled with mass spectrometry (TGA-MS), XPS and Raman spectroscopy. Grafting ratios (GR) for these polymer-grafted materials varied between 6 and 25%; even at these GRs, all graphene derivatives showed increased solubility in organic solvents.

  13. Single crystalline metal films as substrates for graphene growth

    Energy Technology Data Exchange (ETDEWEB)

    Zeller, Patrick; Henss, Ann-Kathrin; Wintterlin, Joost [Department Chemie, Ludwig-Maximilians-Universitaet Muenchen (Germany); Weinl, Michael; Schreck, Matthias [Institut fuer Physik, Universitaet Augsburg (Germany); Speck, Florian; Ostler, Markus [Lehrstuhl fuer Technische Physik, Universitaet Erlangen-Nuernberg, Erlangen (Germany); Institut fuer Physik, Technische Universitaet Chemnitz (Germany); Seyller, Thomas [Institut fuer Physik, Technische Universitaet Chemnitz (Germany)

    2017-11-15

    Single crystalline metal films deposited on YSZ-buffered Si(111) wafers were investigated with respect to their suitability as substrates for epitaxial graphene. Graphene was grown by CVD of ethylene on Ru(0001), Ir(111), and Ni(111) films in UHV. For analysis a variety of surface science methods were used. By an initial annealing step the surface quality of the films was strongly improved. The temperature treatments of the metal films caused a pattern of slip lines, formed by thermal stress in the films, which, however, did not affect the graphene quality and even prevented wrinkle formation. Graphene was successfully grown on all three types of metal films in a quality comparable to graphene grown on bulk single crystals of the same metals. In the case of the Ni(111) films the originally obtained domain structure of rotational graphene phases could be transformed into a single domain by annealing. This healing process is based on the control of the equilibrium between graphene and dissolved carbon in the film. For the system graphene/Ni(111) the metal, after graphene growth, could be removed from underneath the epitaxial graphene layer by a pure gas phase reaction, using the reaction of CO with Ni to give gaseous Ni(CO){sub 4}. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Graphene Thermal Properties: Applications in Thermal Management and Energy Storage

    Directory of Open Access Journals (Sweden)

    Jackie D. Renteria

    2014-11-01

    Full Text Available We review the thermal properties of graphene, few-layer graphene and graphene nanoribbons, and discuss practical applications of graphene in thermal management and energy storage. The first part of the review describes the state-of-the-art in the graphene thermal field focusing on recently reported experimental and theoretical data for heat conduction in graphene and graphene nanoribbons. The effects of the sample size, shape, quality, strain distribution, isotope composition, and point-defect concentration are included in the summary. The second part of the review outlines thermal properties of graphene-enhanced phase change materials used in energy storage. It is shown that the use of liquid-phase-exfoliated graphene as filler material in phase change materials is promising for thermal management of high-power-density battery parks. The reported experimental and modeling results indicate that graphene has the potential to outperform metal nanoparticles, carbon nanotubes, and other carbon allotropes as filler in thermal management materials.

  15. Epitaxial thin films

    Science.gov (United States)

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  16. Electron-phonon coupling in quasi free-standing graphene

    DEFF Research Database (Denmark)

    Christian Johannsen, Jens; Ulstrup, Søren; Bianchi, Marco

    2013-01-01

    Quasi free-standing monolayer graphene can be produced by intercalating species like oxygen or hydrogen between epitaxial graphene and the substrate crystal. If the graphene is indeed decoupled from the substrate, one would expect the observation of a similar electronic dispersion and many......-body effects, irrespective of the substrate and the material used to achieve the decoupling. Here we investigate the electron-phonon coupling in two different types of quasi free-standing monolayer graphene: decoupled from SiC via hydrogen intercalation and decoupled from Ir via oxygen intercalation. Both...

  17. Liquid phase exfoliated graphene for electronic applications

    Science.gov (United States)

    Sukumaran, Sheena S.; Jinesh, K. B.; Gopchandran, K. G.

    2017-09-01

    Graphene dispersions were prepared using the liquid phase exfoliation method with three different surfactants. One surfactant was used from each of the surfactant types, anionic, cationic, and non-ionic; those used, were sodium dodecylbenzene sulfonate (SDBS), cetyltrimethylammonium bromide (CTAB) and polyvinylpyrrolidone (PVP), respectively. Raman spectroscopy was used to investigate the number of layers and the nature of any defects present in the exfoliated graphene. The yield of graphene was found to be less with the non-ionic surfactant, PVP. The deconvolution of 2D peaks at ~2700 cm-1 indicated that graphene prepared using these surfactants resulted in sheets consisting of few-layer graphene. The ratio of intensity of the D and G bands in the Raman spectra showed that edge defect density is high for samples prepared with SDBS compared to the other two, and is attributed to the smaller size of the graphene sheets, as shown in the electron micrographs. In the case of the dispersion in PVP, it is found that the sizes of the graphene sheets are highly sensitive to the concentration of the surfactant used. Here, we have made an attempt to investigate the local density of states in the graphene sheets by measuring the tunnelling current-voltage characteristics. Graphene layers have shown consistent p-type behaviour when exfoliated with SDBS and n-type behaviour when exfoliated with CTAB, with a larger band gap for graphene exfoliated using CTAB. Hence, in addition to the known advantages of liquid phase exfoliation, we found that by selecting suitable surfactants, to a certain extent it is possible to tune the band gap and determine the type of majority carriers.

  18. Synthesis of graphene on Co/SiC structure

    Czech Academy of Sciences Publication Activity Database

    Macháč, P.; Fidler, T.; Cichoň, S.; Jurka, Vlastimil

    2013-01-01

    Roč. 24, č. 10 (2013), s. 3793-3799 ISSN 0957-4522 R&D Projects: GA ČR(CZ) GAP108/11/0894 Institutional support: RVO:68378271 Keywords : chemical-vapor-deposition * thin graphite films * few-layer graphene * silicon-carbide * raman-spectroscopy * carbon * surfaces Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.966, year: 2013

  19. Adsorption of water on graphene/Ru(0001)-an experimental ultra-high vacuum study.

    Science.gov (United States)

    Chakradhar, A; Burghaus, U

    2014-07-21

    Data for water adsorption on epitaxial graphene grown on Ru(0001) at ultra-high vacuum (clean conditions) are discussed. Accordingly, water adsorption was not affected by the support. The interaction is not strictly hydrophobic. We propose simple rules based on ultra-high vacuum kinetics to classify the water-graphene-support interactions.

  20. On the Role of Metal Step-Edges in Graphene Growth

    DEFF Research Database (Denmark)

    Saadi, Souheil; Abild-Pedersen, Frank; Helveg, S.

    2010-01-01

    Graphene growth on transition metal surfaces is studied by means of density functional theory calculations. The results show that graphene grows preferentially out from surface step edges onto lower facets on fcc and hcp metal surfaces. The results also reveal that an epitaxial lattice match...... between graphene and the metal step-edge stabilizes graphene and lowers the corresponding critical graphene nucleus size. In the case of a graphene-metal lattice mismatch, a destabilization of the critical graphene nucleus size may be compensated by tuning the carbon chemical potential. The concepts...... of metal-graphene lattice and carbon chemical potential are included in a simple growth model that describes experimental trends in graphene formation at different metal surfaces under varying growth conditions....

  1. Epitaxial growth of hybrid nanostructures

    Science.gov (United States)

    Tan, Chaoliang; Chen, Junze; Wu, Xue-Jun; Zhang, Hua

    2018-02-01

    Hybrid nanostructures are a class of materials that are typically composed of two or more different components, in which each component has at least one dimension on the nanoscale. The rational design and controlled synthesis of hybrid nanostructures are of great importance in enabling the fine tuning of their properties and functions. Epitaxial growth is a promising approach to the controlled synthesis of hybrid nanostructures with desired structures, crystal phases, exposed facets and/or interfaces. This Review provides a critical summary of the state of the art in the field of epitaxial growth of hybrid nanostructures. We discuss the historical development, architectures and compositions, epitaxy methods, characterization techniques and advantages of epitaxial hybrid nanostructures. Finally, we provide insight into future research directions in this area, which include the epitaxial growth of hybrid nanostructures from a wider range of materials, the study of the underlying mechanism and determining the role of epitaxial growth in influencing the properties and application performance of hybrid nanostructures.

  2. Graphene ribbon growth on structured silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Stoehr, Alexander; Link, Stefan; Starke, Ulrich [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany); Baringhaus, Jens; Aprojanz, Johannes; Tegenkamp, Christoph [Institut fuer Festkoerperphysik, Leibniz Universitaet Hannover (Germany); Niu, Yuran [MAX IV Laboratory, Lund University (Sweden); present address: School of Physics and Astronomy, Cardiff University (United Kingdom); Zakharov, Alexei A. [MAX IV Laboratory, Lund University (Sweden); Chen, Chaoyu; Avila, Jose; Asensio, Maria C. [Synchrotron SOLEIL and Universite Paris-Saclay, Gif sur Yvette (France)

    2017-11-15

    Structured Silicon Carbide was proposed to be an ideal template for the production of arrays of edge specific graphene nanoribbons (GNRs), which could be used as a base material for graphene transistors. We prepared periodic arrays of nanoscaled stripe-mesas on SiC surfaces using electron beam lithography and reactive ion etching. Subsequent epitaxial graphene growth by annealing is differentiated between the basal-plane mesas and the faceting stripe walls as monitored by means of atomic force microscopy (AFM). Microscopic low energy electron diffraction (μ-LEED) revealed that the graphene ribbons on the facetted mesa side walls grow in epitaxial relation to the basal-plane graphene with an armchair orientation at the facet edges. The π-band system of the ribbons exhibits linear bands with a Dirac like shape corresponding to monolayer graphene as identified by angle-resolved photoemission spectroscopy (ARPES). (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Selfsupported epitaxial silicon films

    International Nuclear Information System (INIS)

    Lazarovici, D.; Popescu, A.

    1975-01-01

    The methods of removing the p or p + support of an n-type epitaxial silicon layer using electrochemical etching are described. So far, only n + -n junctions have been processed. The condition of anodic dissolution for some values of the support and layer resistivity are given. By this method very thin single crystal selfsupported targets of convenient areas can be obtained for channeling - blocking experiments

  4. Engineering Graphene Films from Coal

    Science.gov (United States)

    Vijapur, Santosh H.

    Graphene is a unique material with remarkable properties suitable for a wide array of applications. Chemical vapor deposition (CVD) is a simple technique for synthesis of large area and high quality graphene films on various metal substrates. Among the metal substrates, copper has been shown to be an excellent support for the growth of graphene films. Traditionally, hydrocarbon gases are used for the graphene synthesis via CVD. Unconventional solid carbon sources such as various polymers and food waste have also shown great potential for synthesis of graphene films. Coal is one such carbon enriched and abundantly available unconventional source. Utilization of coal as a carbon source to synthesize large area, transparent, and high quality few-layer graphene films via CVD has been demonstrated in the present work. Hydrocarbon gases are released as products of coal pyrolysis at temperatures ≥400 °C. This study hypothesized that, these hydrocarbon gases act as precursors for the synthesis of graphene films on the copper substrate. Hence, atmospheric pressure CVD and low temperature of 400 °C were utilized initially for the production of graphene films. These conditions were suitable for the formation of amorphous carbon (a-C) films but not crystalline graphene films that were the objective of this work. The synthesized a-C films on the copper substrate were shown to be uniform and transparent with large surface area. The thickness and surface roughness of the a-C films were determined to have typical values of 5 nm and 0.55 nm, respectively. The a-C film has >95 % optical transmittance and sheet resistivity of 0.6 MO sq-1. These values are comparable to other carbon thin films synthesized at higher temperatures. Further, the a-C films were transferred onto any type of substrate such as silicon wafer and titanium foil, and can be utilized for diverse applications. However, crystalline graphene films were not produced by implementing atmospheric pressure CVD and low

  5. A green synthetic approach to graphene nanosheets for hydrogen adsorption

    International Nuclear Information System (INIS)

    Yuan Wenhui; Li Baoqing; Li Li

    2011-01-01

    A green and facile strategy of preparing graphene by reducing exfoliated graphite oxide (GO) with glucose was developed in this study. The as-prepared samples were characterized by X-ray diffraction (XRD), Raman spectroscopy, Fourier transform infrared spectroscopy (FT-IR), Scanning electron microscopy (SEM), Transmission electron microscopy (TEM) and Atomic force microscopy (AFM). The characterization results indicated that the graphene sheets (GS) were of high quality with smooth surface, rich pore structure and few layer graphene. The samples have a BET specific surface area of 1205.8 m 2 g -1 measured by N 2 adsorption at 77 K. The hydrogen storage capacity of 2.7 wt.% at 298 K and 25 bar demonstrated that the as-prepared graphene employing glucose as reductant is supposed to be a promising material with outstanding property for hydrogen storage.

  6. High-quality PVD graphene growth by fullerene decomposition on Cu foils

    Czech Academy of Sciences Publication Activity Database

    Azpeitia, J.; Otero-Irurueta, G.; Palacio, I.; Martinez, J. I.; Ruiz del Arbol, N.; Santoro, G.; Gutiérrez, A.; Aballe, L.; Foerster, M.; Kalbáč, Martin; Valeš, Václav; Mompean, F. J.; Garcia-Hernandez, M.; Martín-Gago, J.A.; Munuera, C.; Lopez, M. F.

    2017-01-01

    Roč. 119, AUG 2017 (2017), s. 535-543 ISSN 0008-6223 R&D Projects: GA MŠk LL1301 EU Projects: European Commission(XE) 696656 - GrapheneCore1 Institutional support: RVO:61388955 Keywords : functional perturbation-theory * epitaxial graphene * copper substrate * pt(111) surface * raman-spectrum * cvd-graphene Subject RIV: CF - Physical ; Theoretical Chemistry OBOR OECD: Physical chemistry Impact factor: 6.337, year: 2016

  7. High-quality PVD graphene growth by fullerene decomposition on Cu foils

    Czech Academy of Sciences Publication Activity Database

    Azpeitia, J.; Otero-Irurueta, G.; Palacio, I.; Martinez, J. I.; Ruiz del Arbol, N.; Santoro, G.; Gutiérrez, A.; Aballe, L.; Foerster, M.; Kalbáč, Martin; Valeš, Václav; Mompean, F. J.; Garcia-Hernandez, M.; Martín-Gago, J.A.; Munuera, C.; Lopez, M. F.

    2017-01-01

    Roč. 119, AUG 2017 (2017), s. 535-543 ISSN 0008-6223 R&D Projects: GA MŠk LL1301 EU Projects: European Commission(XE) 696656 - GrapheneCore1 Institutional support: RVO:61388955 Keywords : functional perturbation- theory * epitaxial graphene * copper substrate * pt(111) surface * raman-spectrum * cvd-graphene Subject RIV: CF - Physical ; Theoretical Chemistry OBOR OECD: Physical chemistry Impact factor: 6.337, year: 2016

  8. Stable configurations of graphene on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Javvaji, Brahmanandam; Shenoy, Bhamy Maithry [Department of Aerospace Engineering, Indian Institute of Science, Bangalore 560012 (India); Mahapatra, D. Roy, E-mail: droymahapatra@aero.iisc.ernet.in [Department of Aerospace Engineering, Indian Institute of Science, Bangalore 560012 (India); Ravikumar, Abhilash [Department of Metallurgical and Materials Engineering, National Institute of Technology Karnataka, Surathkal 575025 (India); Hegde, G.M. [Center for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012 (India); Rizwan, M.R. [Department of Metallurgical and Materials Engineering, National Institute of Technology Karnataka, Surathkal 575025 (India)

    2017-08-31

    Highlights: • Simulations of epitaxial growth process for silicon–graphene system is performed. • Identified the most favourable orientation of graphene sheet on silicon substrate. • Atomic local strain due to the silicon–carbon bond formation is analyzed. - Abstract: Integration of graphene on silicon-based nanostructures is crucial in advancing graphene based nanoelectronic device technologies. The present paper provides a new insight on the combined effect of graphene structure and silicon (001) substrate on their two-dimensional anisotropic interface. Molecular dynamics simulations involving the sub-nanoscale interface reveal a most favourable set of temperature independent orientations of the monolayer graphene sheet with an angle of ∽15° between its armchair direction and [010] axis of the silicon substrate. While computing the favorable stable orientations, both the translation and the rotational vibrations of graphene are included. The possible interactions between the graphene atoms and the silicon atoms are identified from their coordination. Graphene sheet shows maximum bonding density with bond length 0.195 nm and minimum bond energy when interfaced with silicon substrate at 15° orientation. Local deformation analysis reveals probability distribution with maximum strain levels of 0.134, 0.047 and 0.029 for 900 K, 300 K and 100 K, respectively in silicon surface for 15° oriented graphene whereas the maximum probable strain in graphene is about 0.041 irrespective of temperature. Silicon–silicon dimer formation is changed due to silicon–carbon bonding. These results may help further in band structure engineering of silicon–graphene lattice.

  9. Graphene on graphene antidot lattices

    DEFF Research Database (Denmark)

    Gregersen, Søren Schou; Pedersen, Jesper Goor; Power, Stephen

    2015-01-01

    Graphene bilayer systems are known to exhibit a band gap when the layer symmetry is broken by applying a perpendicular electric field. The resulting band structure resembles that of a conventional semiconductor with a parabolic dispersion. Here, we introduce a bilayer graphene heterostructure......, where single-layer graphene is placed on top of another layer of graphene with a regular lattice of antidots. We dub this class of graphene systems GOAL: graphene on graphene antidot lattice. By varying the structure geometry, band-structure engineering can be performed to obtain linearly dispersing...

  10. Epitaxial semiconductor quantum wires.

    Science.gov (United States)

    Wu, J; Chen, Y H; Wang, Z G

    2008-07-01

    The investigation on the direct epitaxial quantum wires (QWR) using MBE or MOCVD has been persuited for more than two decades, more lengthy in history as compared with its quantum dot counterpart. Up to now, QWRs with various structural configurations have been produced with different growth methods. This is a reviewing article consisting mainly of two parts. The first part discusses QWRs of various configurations, together with laser devices based on them, in terms of the two growth mechanisms, self-ordering and self-assembling. The second part gives a brief review of the electrical and optical properties of QWRs.

  11. Preparation of colloidal graphene in quantity by electrochemical exfoliation.

    Science.gov (United States)

    Chen, Kunfeng; Xue, Dongfeng

    2014-12-15

    We reported the preparation of colloidal graphene in quantity via the anodic exfoliation of graphite in (NH4)2SO4 aqueous solution. In the currently designed electrochemical exfoliation route, mass high-quality graphene was produced within short reaction time, around 1h. The proposed electrochemical exfoliation mechanism showed that SO4(2-) and H2O can be intercalated into those graphite sheets, monolayer and few-layer graphene were obtained by the formation of gaseous SO2 and O2 within graphite sheets. Stability evaluation showed that our exfoliated colloidal graphene can be perfectly stabilized in DMF solvent more than 1 week. The colloidal graphene can be used to construct various simple and complex patterns by writing it on A4 paper, which can be applied to flexible printed electronic devices. Furthermore, colloidal graphene can show promising applications in the fabrication of binder- and additive-free electrodes for supercapacitors and lithium-ion batteries. Our present method shows huge potential for industrial-scale synthesis of high-quality graphene and further commercialization of graphene colloid for numerous advanced applications in flexible printed electronics and energy storage devices. Copyright © 2014 Elsevier Inc. All rights reserved.

  12. Graphene production by dissociation of camphor molecules on nickel substrate

    Energy Technology Data Exchange (ETDEWEB)

    Ravani, Fotini [Foundation of Research and Technology — Hellas, Institute of Chemical Engineering Sciences (FORTH/ICE-HT), 26504, Patras (Greece); Interdepartmental Program in Polymer Science and Technology, University of Patras, 26504, Patras (Greece); Papagelis, Konstantinos [Foundation of Research and Technology — Hellas, Institute of Chemical Engineering Sciences (FORTH/ICE-HT), 26504, Patras (Greece); Department of Materials Science, University of Patras, 26504, Patras (Greece); Dracopoulos, Vassileios; Parthenios, John [Foundation of Research and Technology — Hellas, Institute of Chemical Engineering Sciences (FORTH/ICE-HT), 26504, Patras (Greece); Dassios, Konstantinos G. [Foundation of Research and Technology — Hellas, Institute of Chemical Engineering Sciences (FORTH/ICE-HT), 26504, Patras (Greece); Department of Material Science and Engineering, University of Ioannina, 45110, Ioannina (Greece); Siokou, Angeliki [Foundation of Research and Technology — Hellas, Institute of Chemical Engineering Sciences (FORTH/ICE-HT), 26504, Patras (Greece); Galiotis, Costas, E-mail: c.galiotis@iceht.forth.gr [Foundation of Research and Technology — Hellas, Institute of Chemical Engineering Sciences (FORTH/ICE-HT), 26504, Patras (Greece); Interdepartmental Program in Polymer Science and Technology, University of Patras, 26504, Patras (Greece); Department of Materials Science, University of Patras, 26504, Patras (Greece)

    2013-01-01

    A chemical vapor deposition (CVD) process for the production of continuous-high quality-graphene layers based on camphor decomposition on polycrystalline Ni foil, is demonstrated. In situ X-ray diffraction at the pyrolysis temperature of the Ni foil indicates the presence of dominant Ni <111> grains which play an important role in the carbon nucleation and growth. The topography of the grown graphene layers is studied by scanning electron microscopy and atomic force microscopy which show that the Ni surface is covered by continuous and wrinkled graphene carpets. Raman spectroscopy reveals the high quality of the graphene film which appears to be only a few monolayers thick. X-ray photoelectron spectroscopy indicates the existence of graphitic layers and the absence of any spectral features associated with carbides (Ni{sub x}C). The proposed CVD process is a sufficient method for large scale production of graphene films. - Highlights: ► An inexpensive chemical vapor deposition method based on camphor is presented. ► Few-layer graphene carpets of high quality are produced on polycrystalline Ni. ► The working deposition temperature is decreased by about 15%. ► Natural cooling is employed for graphene production. ► Role of Ni surface texture upon the graphene growth process is demonstrated.

  13. Damage evaluation in graphene underlying atomic layer deposition dielectrics

    Science.gov (United States)

    Tang, Xiaohui; Reckinger, Nicolas; Poncelet, Olivier; Louette, Pierre; Ureña, Ferran; Idrissi, Hosni; Turner, Stuart; Cabosart, Damien; Colomer, Jean-François; Raskin, Jean-Pierre; Hackens, Benoit; Francis, Laurent A.

    2015-08-01

    Based on micro-Raman spectroscopy (μRS) and X-ray photoelectron spectroscopy (XPS), we study the structural damage incurred in monolayer (1L) and few-layer (FL) graphene subjected to atomic-layer deposition of HfO2 and Al2O3 upon different oxygen plasma power levels. We evaluate the damage level and the influence of the HfO2 thickness on graphene. The results indicate that in the case of Al2O3/graphene, whether 1L or FL graphene is strongly damaged under our process conditions. For the case of HfO2/graphene, μRS analysis clearly shows that FL graphene is less disordered than 1L graphene. In addition, the damage levels in FL graphene decrease with the number of layers. Moreover, the FL graphene damage is inversely proportional to the thickness of HfO2 film. Particularly, the bottom layer of twisted bilayer (t-2L) has the salient features of 1L graphene. Therefore, FL graphene allows for controlling/limiting the degree of defect during the PE-ALD HfO2 of dielectrics and could be a good starting material for building field effect transistors, sensors, touch screens and solar cells. Besides, the formation of Hf-C bonds may favor growing high-quality and uniform-coverage dielectric. HfO2 could be a suitable high-K gate dielectric with a scaling capability down to sub-5-nm for graphene-based transistors.

  14. Pressure-mediated doping in graphene.

    Science.gov (United States)

    Nicolle, Jimmy; Machon, Denis; Poncharal, Philippe; Pierre-Louis, Olivier; San-Miguel, Alfonso

    2011-09-14

    Exfoliated graphene and few layer graphene samples supported on SiO(2) have been studied by Raman spectroscopy at high pressure. For samples immersed on a alcohol mixture, an electron transfer of ∂n/∂P ∼ 8 × 10(12) cm(-2) GPa(-1) is observed for monolayer and bilayer graphene, leading to giant doping values of n ∼ 6 × 10(13) cm(-2) at the maximum pressure of 7 GPa. Three independent and consistent proofs of the doping process are obtained from (i) the evolution of the Raman G-band to 2D-band intensity ratio, (ii) the pressure coefficient of the G-band frequency, and (iii) the 2D band components splitting in the case of the bilayer sample. The charge transfer phenomena is absent for trilayer samples and for samples immersed in argon or nitrogen. We also show that a phase transition from a 2D biaxial strain response, resulting from the substrate drag upon volume reduction, to a 3D hydrostatic compression takes place when going from the bilayer to the trilayer sample. By model calculations we relate this transition to the unbinding of the graphene-SiO(2) system when increasing the number of graphene layers and as function of the surface roughness parameters. We propose that the formation of silanol groups on the SiO(2) substrate allows for a capacitance-induced substrate-mediated charge transfer.

  15. Epitaxy physical principles and technical implementation

    CERN Document Server

    Herman, Marian A; Sitter, Helmut

    2004-01-01

    Epitaxy provides readers with a comprehensive treatment of the modern models and modifications of epitaxy, together with the relevant experimental and technological framework. This advanced textbook describes all important aspects of the epitaxial growth processes of solid films on crystalline substrates, including a section on heteroepitaxy. It covers and discusses in details the most important epitaxial growth techniques, which are currently widely used in basic research as well as in manufacturing processes of devices, namely solid-phase epitaxy, liquid-phase epitaxy, vapor-phase epitaxy, including metal-organic vapor-phase epitaxy and molecular-beam epitaxy. Epitaxy’s coverage of science and texhnology thin-film is intended to fill the need for a comprehensive reference and text examining the variety of problems related to the physical foundations and technical implementation of epitaxial crystallization. It is intended for undergraduate students, PhD students, research scientists, lecturers and practic...

  16. Graphene aerogels

    Science.gov (United States)

    Pauzauskie, Peter J; Worsley, Marcus A; Baumann, Theodore F; Satcher, Jr., Joe H; Biener, Juergen

    2015-03-31

    Graphene aerogels with high conductivity and surface areas including a method for making a graphene aerogel, including the following steps: (1) preparing a reaction mixture comprising a graphene oxide suspension and at least one catalyst; (2) curing the reaction mixture to produce a wet gel; (3) drying the wet gel to produce a dry gel; and (4) pyrolyzing the dry gel to produce a graphene aerogel. Applications include electrical energy storage including batteries and supercapacitors.

  17. Water on graphene: review of recent progress

    Science.gov (United States)

    Melios, C.; Giusca, C. E.; Panchal, V.; Kazakova, O.

    2018-04-01

    The sensitivity of graphene to the surrounding environment is given by its π electrons, which are directly exposed to molecules in the ambient air. The high sensitivity of graphene to the local environment has shown to be both advantageous and problematic for graphene-based devices, such as transistors and sensors, where the graphene carrier concentration and mobility changes due to ambient humidity variations. In this review, recent progress is presented in understanding the effects of water on different types of graphene: epitaxially grown and quasi-free standing on SiC(0 0 0 1), grown by chemical vapour deposition and transfered on SiO2, and exfoliated flakes. It is demonstrated that water withdraws electrons from graphene, but the graphene-water interaction highly depends on the thickness, layer stacking, underlying substrate and substrate-induced doping. Moreover, we highlight the importance of clear and unambiguous description of the environmental conditions (i.e. relative humidity) whenever a routine characterisation for carrier concentration and mobility is reported (often presented as a simple figure-of-merit), as these electrical characteristics are highly dependent on the adsorbed molecules and the surrounding environment.

  18. Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy

    Science.gov (United States)

    Vuong, T. Q. P.; Cassabois, G.; Valvin, P.; Rousseau, E.; Summerfield, A.; Mellor, C. J.; Cho, Y.; Cheng, T. S.; Albar, J. D.; Eaves, L.; Foxon, C. T.; Beton, P. H.; Novikov, S. V.; Gil, B.

    2017-06-01

    We investigate the opto-electronic properties of hexagonal boron nitride grown by high temperature plasma-assisted molecular beam epitaxy. We combine atomic force microscopy, spectroscopic ellipsometry, and photoluminescence spectroscopy in the deep ultraviolet to compare the quality of hexagonal boron nitride grown either on sapphire or highly oriented pyrolytic graphite. For both substrates, the emission spectra peak at 235 nm, indicating the high optical quality of hexagonal boron nitride grown by molecular beam epitaxy. The epilayers on highly oriented pyrolytic graphite demonstrate superior performance in the deep ultraviolet (down to 210 nm) compared to those on sapphire. These results reveal the potential of molecular beam epitaxy for the growth of hexagonal boron nitride on graphene, and more generally, for fabricating van der Waals heterostructures and devices by means of a scalable technology.

  19. Graphene Coatings

    DEFF Research Database (Denmark)

    Stoot, Adam Carsten; Camilli, Luca; Bøggild, Peter

    2014-01-01

    Owing to its remarkable electrical and mechanical properties, graphene has been attracting tremendous interest in materials science. In particular, its chemical stability and impermeability make it a promising protective membrane. However, recent investigations reveal that single layer graphene...... cannot be used as a barrier in the long run, due to galvanic corrosion phenomena arising when oxygen or water penetrate through graphene cracks or domain boundaries. Here, we overcome this issue by using a multilayered (ML) graphene coating. Our lab- as well as industrial-scale tests demonstrate that ML...... graphene can effectively protect Ni in harsh environments, even after long term exposure. This is made possible by the presence of a high number of graphene layers, which can efficiently mask the cracks and domain boundaries defects found in individual layers of graphene. Our findings thus show...

  20. Graphene plasmonic nanogratings for biomolecular sensing in liquid

    Science.gov (United States)

    Chorsi, Meysam T.; Chorsi, Hamid T.

    2017-12-01

    We design a surface plasmon resonance (SPR) molecular sensor based on graphene and biomolecule adsorption at graphene-liquid interfaces. The sensor configuration consists of two opposing arrays of graphene nanograting mounted on a substrate, with a liquid-phase sensing medium confined between them. We characterize the design in simulation on a variety of substrates by altering the refractive index of the sensing medium and varying the absorbance-transmittance characteristics. The influence of various parameters on the biosensor's performance, including the Fermi level of graphene, the dielectric constant of the substrate, and the incident angle for plasmon excitation, is investigated. Numerical simulations demonstrate the sensitivity higher than 3000 nm/RIU (refractive index unit). The device supports a wide range of substrates in which graphene can be epitaxially grown. The proposed biosensor works independent of the incident angle and can be tuned to cover a broadband wavelength range.

  1. Quasi-Freestanding multilayer graphene films on the carbon face of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Siegel, D. A.; Hwang, C. G.; Fedorov, A. V.; Lanzara, A.

    2010-06-30

    The electronic band structure of as-grown and doped graphene grown on the carbon face of SiC is studied by high-resolution angle-resolved photoemission spectroscopy, where we observe both rotations between adjacent layers and AB-stacking. The band structure of quasi-freestanding AB-bilayers is directly compared with bilayer graphene grown on the Si-face of SiC to study the impact of the substrate on the electronic properties of epitaxial graphene. Our results show that the C-face films are nearly freestanding from an electronic point of view, due to the rotations between graphene layers.

  2. Graphene mediated domain formation in exchange coupled graphene/Co3O4(111)/Co(0001) trilayers.

    Science.gov (United States)

    Wang, Yi; Kong, Lingmei; Pasquale, Frank L; Cao, Yuan; Dong, Bin; Tanabe, Iori; Binek, Christian; Dowben, Peter A; Kelber, Jeffry A

    2013-11-27

    Graphene grown directly on Co3O4(111)/Co(0001) by molecular beam epitaxy exhibits extrinsic p-type doping, as demonstrated by photoemission and conductivity measurements. Trilayer heterostructures of graphene/Co3O4(111)/Co(0001) reveal an unconventional magneto-optical Kerr hysteresis with vanishing remanence for temperatures up to 400 K. Magnetic force microscopy measurements demonstrate that the vanishing remanence is due to a complex domain state, indicating substrate-induced graphene spin polarization. The domain formation of the Co magnetization is in strong contrast to the magnetic behavior of Co in Co/Co3O4 bilayers. This suggests that the Co3O4 interlayer mediates the variable Co magnetization and induced graphene spin polarization, with possible retroaction of graphene on the Co film.

  3. Accelerating the development of transparent graphene electrodes through basic science driven chemical functionalization.

    Energy Technology Data Exchange (ETDEWEB)

    Chan, Calvin [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Beechem, III, Thomas Edwin [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Ohta, Taisuke [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Brumbach, Michael T. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wheeler, David Roger [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Veneman, Alexander [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Gearba, I. Raluca [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Stevenson, Keith J. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2013-09-01

    Chemical functionalization is required to adapt graphenes properties to many applications. However, most covalent functionalization schemes are spontaneous or defect driven and are not suitable for applications requiring directed assembly of molecules on graphene substrates. In this work, we demonstrated electrochemically driven covalent bonding of phenyl iodoniums onto epitaxial graphene. The amount of chemisorption was demonstrated by varying the duration of the electrochemical driving potential. Chemical, electronic, and defect states of phenyl-modified graphene were studied by photoemission spectroscopy, spatially resolved Raman spectroscopy, and water contact angle measurement. Covalent attachment rehybridized some of the delocalized graphene sp2 orbitals to localized sp3 states. Control over the relative spontaneity (reaction rate) of covalent graphene functionalization is an important first step to the practical realization of directed molecular assembly on graphene. More than 10 publications, conference presentations, and program highlights were produced (some invited), and follow-on funding was obtained to continue this work.

  4. Graphene-based electrochemical sensor for detection of 2,4,6-trinitrotoluene (TNT) in seawater: the comparison of single-, few-, and multilayer graphene nanoribbons and graphite microparticles.

    Science.gov (United States)

    Goh, Madeline Shuhua; Pumera, Martin

    2011-01-01

    The detection of explosives in seawater is of great interest. We compared response single-, few-, and multilayer graphene nanoribbons and graphite microparticle-based electrodes toward the electrochemical reduction of 2,4,6-trinitrotoluene (TNT). We optimized parameters such as accumulation time, accumulation potential, and pH. We found that few-layer graphene exhibits about 20% enhanced signal for TNT after accumulation when compared to multilayer graphene nanoribbons. However, graphite microparticle-modified electrode provides higher sensitivity, and there was no significant difference in the performance of single-, few-, and multilayer graphene nanoribbons and graphite microparticles for the electrochemical detection of TNT. We established the limit of detection of TNT in untreated seawater at 1 μg/mL.

  5. Topographic and electronic contrast of the graphene moir´e on Ir(111) probed by scanning tunneling microscopy and noncontact atomic force microscopy

    NARCIS (Netherlands)

    Sun, Z.; Hämäläinen, K.; Sainio, K.; Lahtinen, J.; Vanmaekelbergh, D.A.M.; Liljeroth, P.

    2011-01-01

    Epitaxial graphene grown on transition-metal surfaces typically exhibits a moir´e pattern due to the lattice mismatch between graphene and the underlying metal surface. We use both scanning tunneling microscopy (STM) and atomic force microscopy (AFM) to probe the electronic and topographic contrast

  6. Aromatic graphene

    Energy Technology Data Exchange (ETDEWEB)

    Das, D. K., E-mail: gour.netai@gmail.com [Department of Metallurgical and Material Science Engineering, National Institute of Technology Durgapur-713209, West Bengal (India); Sahoo, S., E-mail: sukadevsahoo@yahoo.com [Department of Physics, National Institute of Technology Durgapur-713209, West Bengal (India)

    2016-04-13

    In recent years graphene attracts the scientific and engineering communities due to its outstanding electronic, thermal, mechanical and optical properties and many potential applications. Recently, Popov et al. [1] have studied the properties of graphene and proved that it is aromatic but without fragrance. In this paper, we present a theory to prepare graphene with fragrance. This can be used as scented pencils, perfumes, room and car fresheners, cosmetics and many other useful household substances.

  7. Aromatic graphene

    International Nuclear Information System (INIS)

    Das, D. K.; Sahoo, S.

    2016-01-01

    In recent years graphene attracts the scientific and engineering communities due to its outstanding electronic, thermal, mechanical and optical properties and many potential applications. Recently, Popov et al. [1] have studied the properties of graphene and proved that it is aromatic but without fragrance. In this paper, we present a theory to prepare graphene with fragrance. This can be used as scented pencils, perfumes, room and car fresheners, cosmetics and many other useful household substances.

  8. Characteristics of thermally reduced graphene oxide and applied for dye-sensitized solar cell counter electrode

    International Nuclear Information System (INIS)

    Ho, Ching-Yuan; Wang, Hong-Wen

    2015-01-01

    Graphical abstract: Experimental process: (1) graphite oxidized to graphene oxide; (2) thermal reduction from graphene oxide to graphene; (3) applying to DSSC counter electrode. - Highlights: • Intercalated defects were eliminated by increasing reduction temperature of GO. • High reduction temperature of tGP has lower resistance, high the electron lifetime. • Higher thermal reduction of GO proposes electrocatalytic properties. • DSSC using tGP 250 as counter electrode has energy conversion efficiency of 3.4%. - Abstract: Graphene oxide (GO) was synthesized from a flake-type of graphite powder, which was then reduced to a few layers of graphene sheets using the thermal reduction method. The surface morphology, phase crystallization, and defect states of the reduced graphene were determined from an electron microscope equipped with an energy dispersion spectrometer, X-ray diffraction, Raman spectroscopy, and infrared spectra. After graphene formation, the intercalated defects that existed in the GO were removed, and it became crystalline by observing impurity changes and d-spacing. Dye-sensitized solar cells, using reduced graphene as the counter electrode, were fabricated to evaluate the electrolyte activity and charge transport performance. The electrochemical impedance spectra showed that increasing the thermal reduction temperature could achieve faster electron transport and longer electron lifetime, and result in an energy conversion efficiency of approximately 3.4%. Compared to the Pt counter electrode, the low cost of the thermal reduction method suggests that graphene will enjoy a wide range of potential applications in the field of electronic devices.

  9. Graphene coating for anti-corrosion and the investigation of failure mechanism

    International Nuclear Information System (INIS)

    Zhu, Y X; Duan, C Y; Chen, Y F; Wang, Y; Liu, H Y

    2017-01-01

    Graphene produced by chemical vapor deposition (CVD) methods has been considered as a promising corrosion prevention layer because of its exceptional structure and impermeability. However, the anti-corrosion performance and the failure mechanism are still controversial. In this study, graphene layers with different quality levels, crystallite sizes, and layer numbers were prepared on the surface of Cu by a CVD process. The effects of grain boundaries (GBs) on the failure of graphene layers to provide adequate protection were investigated in detail by combining graphene transfer techniques, computation, and anti-corrosion measurements. Our results reveal that corrosion rates decrease marginally upon the increase of graphene layer number, and this rather weak dependence on thickness likely arises from the aligned nature of the GBs in CVD-grown few-layer graphene. This problem can potentially be overcome by layer-by-layer graphene transfer technique, in which corrosion is found to be arrested locally when transferred graphene is present on top of the as-grown graphene. However, this advantage is not reflected in corrosion studies performed on large-scale samples, where cracks or imperfect interfaces could offset the advantages of GB misalignment. With improvements in technology, the layer-by-layer assembly technique could be used to develop an effective anti-corrosion barrier. (paper)

  10. Characteristics of thermally reduced graphene oxide and applied for dye-sensitized solar cell counter electrode

    Energy Technology Data Exchange (ETDEWEB)

    Ho, Ching-Yuan, E-mail: cyho@cycu.edu.tw [Department of Mechanical Engineering, Chung Yuan Christian University, Chung-Li, Taiwan (China); Department of Chemistry, Center for Nanotechnology and Institute of Biomedical Technology, Chung Yuan Christian University, Chung-Li, Taiwan (China); Wang, Hong-Wen [Department of Chemistry, Center for Nanotechnology and Institute of Biomedical Technology, Chung Yuan Christian University, Chung-Li, Taiwan (China); Department of Chemistry, Chung Yuan Christian University, Chung-Li, Taiwan (China)

    2015-12-01

    Graphical abstract: Experimental process: (1) graphite oxidized to graphene oxide; (2) thermal reduction from graphene oxide to graphene; (3) applying to DSSC counter electrode. - Highlights: • Intercalated defects were eliminated by increasing reduction temperature of GO. • High reduction temperature of tGP has lower resistance, high the electron lifetime. • Higher thermal reduction of GO proposes electrocatalytic properties. • DSSC using tGP{sub 250} as counter electrode has energy conversion efficiency of 3.4%. - Abstract: Graphene oxide (GO) was synthesized from a flake-type of graphite powder, which was then reduced to a few layers of graphene sheets using the thermal reduction method. The surface morphology, phase crystallization, and defect states of the reduced graphene were determined from an electron microscope equipped with an energy dispersion spectrometer, X-ray diffraction, Raman spectroscopy, and infrared spectra. After graphene formation, the intercalated defects that existed in the GO were removed, and it became crystalline by observing impurity changes and d-spacing. Dye-sensitized solar cells, using reduced graphene as the counter electrode, were fabricated to evaluate the electrolyte activity and charge transport performance. The electrochemical impedance spectra showed that increasing the thermal reduction temperature could achieve faster electron transport and longer electron lifetime, and result in an energy conversion efficiency of approximately 3.4%. Compared to the Pt counter electrode, the low cost of the thermal reduction method suggests that graphene will enjoy a wide range of potential applications in the field of electronic devices.

  11. Graphene-assisted high-efficiency liquid crystal tunable terahertz metamaterial absorber.

    Science.gov (United States)

    Wang, Lei; Ge, Shijun; Hu, Wei; Nakajima, Makoto; Lu, Yanqing

    2017-10-02

    In this paper, few-layer porous graphene is integrated onto the surface of a metasurface layer to provide a uniform static electric field to efficiently control liquid crystal, thereby enabling flexible metamaterial designs. We demonstrate a tunable cross-shaped metamaterial absorber with different arm lengths driven by this combined metasurface and graphene electrode. The resulting absorber supports a resonant frequency tunable from 0.75 to 1 THz with a high-quality factor, and amplitude modulation of ~80% at these frequencies with an applied voltage of 10 V. Furthermore, the near-field intensity and hot spot distribution can be manipulated over a broad range.

  12. In-situ TEM imaging of the anisotropic etching of graphene by metal nanoparticles.

    Science.gov (United States)

    Wei, Jiake; Xu, Zhi; Wang, Hao; Tian, Xuezeng; Yang, Shize; Wang, Lifen; Wang, Wenlong; Bai, Xuedong

    2014-11-21

    Few-layer graphene was successfully tailored with smooth edges along crystallographic directions by Joule heating-driven tungsten nanoparticles inside a transmission electron microscope. The dynamic process was monitored in real time at the atomic resolution level. These high-resolution in-situ observations show that the neighboring graphene layers joined together to form closed edges, which is in contrast to the supposed open edges formed with hydrogen passivation. The tungsten nanoparticles transformed to W₂C in the intermediate stage of etching and to WC after etching, suggesting that carbon dissolution helped the continuous action of the metal nanoparticles in the catalytic anisotropic etching reaction.

  13. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

    1994-01-01

    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  14. Carbide-forming groups IVB-VIB metals: a new territory in the periodic table for CVD growth of graphene.

    Science.gov (United States)

    Zou, Zhiyu; Fu, Lei; Song, Xiuju; Zhang, Yanfeng; Liu, Zhongfan

    2014-07-09

    Early transition metals, especially groups IVB-VIB metals, can form stable carbides, which are known to exhibit excellent "noble-metal-like" catalytic activities. We demonstrate herein the applications of groups IVB-VIB metals in graphene growth using atmospheric pressure chemical vapor deposition technique. Similar to the extensively studied Cu, Ni, and noble metals, these transition-metal foils facilitate the catalytic growth of single- to few-layer graphene. The most attractive advantage over the existing catalysts is their perfect control of layer thickness and uniformity with highly flexible experimental conditions by in situ converting the dissolved carbons into stable carbides to fully suppress the upward segregation/precipitation effect. The growth performance of graphene on these transition metals can be well explained by the periodic physicochemical properties of elements. Our work has disclosed a new territory of catalysts in the periodic table for graphene growth and is expected to trigger more interest in graphene research.

  15. Exfoliation of graphene with an industrial dye: teaching an old dog new tricks

    International Nuclear Information System (INIS)

    Schlierf, Andrea; Palermo, Vincenzo; Cha, Kitty; Georg Schwab, Matthias; Samorı, Paolo

    2014-01-01

    We describe the exfoliation, processing and inclusion in polymer composites of few-layers graphene nanoplatelets (GNPs) by using the molecule indanthrone blue sulphonic acid sodium salt (IBS), a very common industrial dyestuff and intermediate for liquid crystal preparation. We show how IBS can be used to successfully exfoliate graphite into few-layers graphene yielding highly stable dispersions in water. To demonstrate that the method is suitable for applications in composites, these graphene-organic hybrids are processed into a commercial commodity polymer (polyvinyl alcohol, PVA), enhancing its electrical bulk conductivity by ten orders of magnitude by adding as few as 3% of GNP. We attribute the good performance of IBS in dispersing GNPs in water to its amphiphilic nature and the tendency to self-assemble through π–π interaction of its large aromatic core with the graphene surface. The molecule studied here, unlike many specialty organic surfactants or solvents commonly known to exfoliate graphene, is already used as a blue pigment dispersant additive in the industrial production of polymers and thus does not need to be removed from the final product. (paper)

  16. Role of defects in the process of graphene growth on hexagonal boron nitride from atomic carbon

    International Nuclear Information System (INIS)

    Dabrowski, J.; Lippert, G.; Schroeder, T.; Lupina, G.

    2014-01-01

    Hexagonal boron nitride (h-BN) is an attractive substrate for graphene, as the interaction between these materials is weak enough for high carrier mobility to be retained in graphene but strong enough to allow for some epitaxial relationship. We deposited graphene on exfoliated h-BN by molecular beam epitaxy (MBE), we analyzed the atomistic details of the process by ab initio density functional theory (DFT), and we linked the DFT and MBE results by random walk theory. Graphene appears to nucleate around defects in virgin h-BN. The DFT analysis reveals that sticking of carbon to perfect h-BN is strongly reduced by desorption, so that pre-existing seeds are needed for the nucleation. The dominant nucleation seeds are C N C B and O N C N pairs and B 2 O 3 inclusions in the virgin substrate

  17. Growth and intercalation of graphene on silicon carbide studied by low-energy electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Speck, Florian; Ostler, Markus; Wanke, Martina; Seyller, Thomas [Universitaet Erlangen-Nuernberg, Lehrstuhl fuer Technische Physik, Erlangen (Germany); Technische Universitaet Chemnitz, Institut fuer Physik (Germany); Besendoerfer, Sven [Universitaet Erlangen-Nuernberg, Lehrstuhl fuer Technische Physik, Erlangen (Germany); Krone, Julia [Technische Universitaet Chemnitz, Institut fuer Physik (Germany)

    2017-11-15

    Based on its electronic, structural, chemical, and mechanical properties, many potential applications have been proposed for graphene. In order to realize these visions, graphene has to be synthesized, grown, or exfoliated with properties that are determined by the targeted application. Growth of so-called epitaxial graphene on silicon carbide by sublimation of silicon in an argon atmosphere is one particular method that could potentially lead to electronic applications. In this contribution we summarize our recent work on different aspects of epitaxial graphene growth and interface manipulation by intercalation, which was performed by a combination of low-energy electron microscopy, low-energy electron diffraction, atomic force microscopy and photoelectron spectroscopy. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Preparation of water-soluble graphene nanoplatelets and highly conductive films

    KAUST Repository

    Xu, Xuezhu

    2017-08-11

    This paper tackles the challenge of preparation stable, highly concentrated aqueous graphene dispersions. Despite tremendous recent interest, there has been limited success in developing a method that ensures the total dispersion of non-oxidized, defect-free graphene nanosheets in water. This study successfully demonstrates that few-layer graphene nanoplatelets (GNPs) can form highly concentrated aqueous colloidal solutions after they have been pretreated in a low-concentration inorganic sodium-hypochlorite and sodium-bromide salted aqueous solvent. This method retains the graphitic structure as evidenced by nuclear magnetic resonance spectroscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy. Vacuum-filtrated freestanding films demonstrate an electrical conductivity as high as 3000 S m−1. This dispersion technique is believed to be applicable not only for GNPs, but also for dispersing other types of graphitic materials, including fullerenes, single/double/multi-walled carbon nanotubes, graphene nanoribbons and etc.

  19. Light-assisted recharging of graphene quantum dots in fluorographene matrix

    Science.gov (United States)

    Antonova, I. V.; Nebogatikova, N. A.; Prinz, V. Ya.; Popov, V. I.; Smagulova, S. A.

    2014-10-01

    In the present study, the charge transient spectroscopy was used to analyze the transient relaxation of charges in graphene and bilayer-graphene quantum dot (QD) systems formed by chemical functionalization of graphene and few-layer graphene layers. A set of activation energies (one to three different values) for the emission of charges from QDs sized 50 to 70 nm, most likely proceeding via the thermal activation of charge carriers from QD quantum confinement levels, were deduced from measurements performed in the dark. Daylight illumination of samples during measurements was found to result in a strong decrease of the activation energies and in an involvement of an athermal process in the charge relaxation phenomenon. The time of the light-assisted emission of charge carriers from QDs proved to be two to four orders of magnitude shorter than the time of their emission from QDs under no-illumination conditions.

  20. Graphene Nanodevices

    NARCIS (Netherlands)

    Calado, V.E.

    2013-01-01

    This thesis describes a divergent set of experiments on graphene, a one-atom thin sheet of carbon. We employ graphene’s unique properties to explore fundamental physics and novel applications. This is done by nano fabricating graphene to nanodevices, which are subject to experiments. Here we first

  1. Efficient Transfer of Graphene-Physical and Electrical Performance Perspective

    KAUST Repository

    Ghoneim, Mohamed T.

    2012-11-01

    Efficient Transfer of Graphene –Physical and Electrical Performance Perspective Graphene has become one of the most widely used atomic crystal structure materials since its first experimental proof by Geim-Novoselov in 2004 [1]. This is attributed to its reported incredible carrier mobility, mechanical strength and thermal conductivity [2] [3] [4]. These properties suggest interesting applications of Graphene ranging from electronics to energy storage and conversion [5]. In 2008, Chen et al reported a 40,000 cm2V-1s-1 mobility for a Single Layer Graphene (SLG) on SiO2 compared to 285 cm2V-1s-1 for silicon channel devices [6]. Chemical vapor deposition (CVD) is a common method for growing graphene on a metal surface as a catalyst for graphene nucleation. This adds a necessary transfer step to the target substrate ultimately desired for graphene devices fabrication. Interfacing with graphene is a critical challenge in preserving its promising high mobility. This initiated the motivation for studying the effect of intermediate interfaces imposed by transfer processes. In this work, few layers graphene (FLG) was grown on copper foils inside a high temperature furnace. Then Raman spectroscopy was performed on grown graphene sample to confirm few (in between 3-10) layers. Afterwards the sample was cut into three pieces and transferred to 300 nm SiO2 on Si substrates using three techniques, namely: (i) pickup transfer with top side of Graphene brought in contact with SiO2 [7], (ii) Ploy (methyl methacrylate) (PMMA) transfer with Graphene and a PMMA support layer on top scooped from bottom side [8], and (iii) a modified direct transfer which is similar to PMMA transfer without the support layer [9]. Comparisons were done using Raman spectroscopy to determine the relative defectivity, Scanning Electron Microscopy (SEM) to observe discontinuities and Atomic Force Microscopy (AFM) to measure surface roughness. Then we conclude with electrical data based on the contact

  2. Graphene Electrodes

    DEFF Research Database (Denmark)

    Pizzocchero, Filippo

    The production of graphene and the other 2D materials is presented in the beginning of this thesis. Micromechanical exfoliation is the best method for obtaining relatively small and top quality samples. The invention of Graphene Finder simplifies the procedure of finding the exfoliated flakes...... in copper thin films is studied and found to be detrimental for the growth of graphene. The modified synthesis of rGO is introduced, as rGO represents a cheap alternative to CVD for large scale production of graphene. The transfer of flakes is performed by several methods, such as with PVA/PMMA support, CAB...... wedging and the pick-up technique with hBN. Several important improvements of the pick-up technique are introduced. These allowed us to transfer any 2D crystals and patterned graphene flakes with PMMA residues. We also developed the drop-down technique, which is used to release any crystal on the surface...

  3. Coupling Graphene Sheets with Iron Oxide Nanoparticles for Energy Storage and Microelectronics

    Science.gov (United States)

    2015-08-13

    magnetic nanocrystals . 15. SUBJECT TERMS Electromagnetic Materials, Graphene, Nanocomposites, Nanoparticles 16. SECURITY CLASSIFICATION OF: 17. LIMITATION...includes micromechanical exfoliation of graphite, chemical vapour deposition, epitaxial growth on electrically insulating surface, liquid phase and...procedures [10,11] are used to couple PyDop1-ɤ-Fe2O3. GNPs provide the intrinsic graphene electrical conductivity to the GNP/GO films. The GNP/GO film is

  4. Fabrication of Si(111) crystalline thin film on graphene by aluminum-induced crystallization

    Energy Technology Data Exchange (ETDEWEB)

    Høiaas, I. M. [Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim (Norway); Kim, D. C., E-mail: dc.kim@crayonano.com, E-mail: helge.weman@ntnu.no; Weman, H., E-mail: dc.kim@crayonano.com, E-mail: helge.weman@ntnu.no [Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim (Norway); CrayoNano AS, Otto Nielsens vei 12, NO-7052 Trondheim (Norway)

    2016-04-18

    We report the fabrication of a Si(111) crystalline thin film on graphene by the aluminum-induced crystallization (AIC) process. The AIC process of Si(111) on graphene is shown to be enhanced compared to that on an amorphous SiO{sub 2} substrate, resulting in a more homogeneous Si(111) thin film structure as revealed by X-ray diffraction and atomic force microscopy measurements. Raman measurements confirm that the graphene is intact throughout the process, retaining its characteristic phonon spectrum without any appearance of the D peak. A red-shift of Raman peaks, which is more pronounced for the 2D peak, is observed in graphene after the crystallization process. It is found to correlate with the red-shift of the Si Raman peak, suggesting an epitaxial relationship between graphene and the adsorbed AIC Si(111) film with both the graphene and Si under tensile strain.

  5. Heteroepitaxial growth of wafer scale highly oriented graphene using inductively coupled plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Gao, Libo; Xu, Hai; Li, Linjun; Loh, Kian Ping; Yang, Yang; Fu, Qiang; Bao, Xinhe

    2016-01-01

    The chemical vapor deposition (CVD) of graphene on Cu has attracted much attention because of its industrial scalability. Herein, we report inductively coupled plasma-assisted CVD of epitaxially grown graphene on (111)-textured Cu film alloyed with a small amount of Ni, where large area high quality graphene film can be grown in less than 5 min at 800 °C, thus affording industrial scalability. The epitaxially grown graphene films on (111)-textured Cu contain grains which are predominantly aligned with the Cu lattice and about 10% of 30°-rotated grains (anti-grains). Such graphene films are exclusively monolayer and possess good electrical conductivity, high carrier mobility, and room temperature quantum Hall effect. Magnetoresistance measurements reveal that the reduction of the grain sizes from 150 nm to 50 nm produce increasing Anderson localization and the appearance of a transport gap. Owing to the presence of grain boundaries in these anti-grains, epitaxially grown graphene films possess n-type characteristics and exhibit ultra-high sensitivity to adsorbates. (letter)

  6. Preparation and electrical transport properties of quasi free standing bilayer graphene on SiC (0001) substrate by H intercalation

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Cui; Liu, Qingbin; Li, Jia; Lu, Weili; He, Zezhao; Cai, Shujun; Feng, Zhihong, E-mail: ga917vv@163.com [National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051 (China)

    2014-11-03

    We investigate the temperature dependent electrical transport properties of quasi-free standing bilayer graphene on 4H-SiC (0001) substrate. Three groups of monolayer epitaxial graphene and corresponding quasi-free standing bilayer graphene with different crystal quality and layer number homogeneity are prepared. Raman spectroscopy and atomic-force microscopy are used to obtain their morphologies and layer number, and verify the complete translation of buffer layer into graphene. The highest room temperature mobility reaches 3700 cm{sup 2}/V·s for the quasi-free standing graphene. The scattering mechanism analysis shows that poor crystal quality and layer number inhomogeneity introduce stronger interacting of SiC substrate to the graphene layer and more impurities, which limit the carrier mobility of the quasi-free standing bilayer graphene samples.

  7. A single-stage functionalization and exfoliation method for the production of graphene in water: stepwise construction of 2D-nanostructured composites with iron oxide nanoparticles.

    Science.gov (United States)

    Ihiawakrim, Dris; Ersen, Ovidiu; Melin, Frédéric; Hellwig, Petra; Janowska, Izabela; Begin, Dominique; Baaziz, Walid; Begin-Colin, Sylvie; Pham-Huu, Cuong; Baati, Rachid

    2013-10-07

    A practically simple top-down process for the exfoliation of graphene (GN) and few-layer graphene (FLG) from graphite is described. We have discovered that a biocompatible amphiphilic pyrene-based hexahistidine peptide is able to exfoliate, functionalize, and dissolve few layer graphene flakes in pure water under exceptionally mild, sustainable and virtually innocuous low intensity cavitation conditions. Large area functionalized graphene flakes with the hexahistidine oligopeptide (His₆-TagGN = His₆@GN) have been produced efficiently at room temperature and characterized by TEM, Raman, and UV spectroscopy. Conductivity experiments carried out on His₆-TagGN samples revealed superior electric performances as compared to reduced graphene oxide (rGO) and non-functionalized graphene, demonstrating the non-invasive features of our non-covalent functionalization process. We postulated a rational exfoliation mechanism based on the intercalation of the peptide amphiphile under cavitational chemistry. We also demonstrated the ability of His6-TagGN nanoassemblies to self-assemble spontaneously with inorganic iron oxide nanoparticles generating magnetic two-dimensional (2D) His₆-TagGN/Fe₃O₄ nanocomposites under mild and non-hydrothermal conditions. The set of original experiments described here open novel perspectives in the facile production of water dispersible high quality GN and FLG sheets that will improve and facilitate the interfacing, processing and manipulation of graphene for promising applications in catalysis, nanocomposite construction, integrated nanoelectronic devices and bionanotechnology.

  8. Graphene ``microdrums'' on a freestanding perforated thin membrane for high sensitivity MEMS pressure sensors

    Science.gov (United States)

    Wang, Qiugu; Hong, Wei; Dong, Liang

    2016-03-01

    We present a microelectromechanical system (MEMS) graphene-based pressure sensor realized by transferring a large area, few-layered graphene on a suspended silicon nitride thin membrane perforated by a periodic array of micro-through-holes. Each through-hole is covered by a circular drum-like graphene layer, namely a graphene ``microdrum''. The uniqueness of the sensor design is the fact that introducing the through-hole arrays into the supporting nitride membrane allows generating an increased strain in the graphene membrane over the through-hole array by local deformations of the holes under an applied differential pressure. Further reasons contributing to the increased strain in the devised sensitive membrane include larger deflection of the membrane than that of its imperforated counterpart membrane, and direct bulging of the graphene microdrum under an applied pressure. Electromechanical measurements show a gauge factor of 4.4 for the graphene membrane and a sensitivity of 2.8 × 10-5 mbar-1 for the pressure sensor with a good linearity over a wide pressure range. The present sensor outperforms most existing MEMS-based small footprint pressure sensors using graphene, silicon, and carbon nanotubes as sensitive materials, due to the high sensitivity.

  9. Superlubricating graphene and graphene oxide films

    Science.gov (United States)

    Sumant, Anirudha V.; Erdemir, Ali; Choi, Junho; Berman, Diana

    2018-02-13

    A system and method for forming at least one of graphene and graphene oxide on a substrate and an opposed wear member. The system includes graphene and graphene oxide formed by an exfoliation process or solution processing method to dispose graphene and/or graphene oxide onto a substrate. The system further includes an opposing wear member disposed on another substrate and a gas atmosphere of an inert gas like N2, ambient, a humid atmosphere and a water solution.

  10. Nitrogen-doped graphene network supported copper nanoparticles encapsulated with graphene shells for surface-enhanced Raman scattering

    Science.gov (United States)

    Zhang, Xiang; Shi, Chunsheng; Liu, Enzuo; Li, Jiajun; Zhao, Naiqin; He, Chunnian

    2015-10-01

    In this study, we demonstrated nitrogen-doped graphene network supported few-layered graphene shell encapsulated Cu nanoparticles (NPs) (Cu@G-NGNs) as a sensing platform, which were constructed by a simple and scalable in situ chemical vapor deposition (CVD) technique with the assistance of a self-assembled three-dimensional (3D) NaCl template. Compared with pure Cu NPs and graphene decorated Cu NPs, the graphene shells can strengthen the plasmonic coupling between graphene and Cu, thereby contributing to an obvious improvement in the local electromagnetic field that was validated by finite element numerical simulations, while the 3D nitrogen-doped graphene walls with a large surface area facilitated molecule adsorption and the doped nitrogen atoms embedded in the graphene lattice can reduce the surface energy of the system. With these merits, a good surface enhanced Raman spectroscopy (SERS) activity of the 3D Cu@G-NGN painting film on glass was demonstrated using rhodamine 6G and crystal violet as model analytes, exhibiting a satisfactory sensitivity, reproducibility and stability. As far as we know, this is the first report on the in situ synthesis of nitrogen-doped graphene/copper nanocomposites and this facile and low-cost Cu-based strategy tends to be a good supplement to Ag and Au based substrates for SERS applications.In this study, we demonstrated nitrogen-doped graphene network supported few-layered graphene shell encapsulated Cu nanoparticles (NPs) (Cu@G-NGNs) as a sensing platform, which were constructed by a simple and scalable in situ chemical vapor deposition (CVD) technique with the assistance of a self-assembled three-dimensional (3D) NaCl template. Compared with pure Cu NPs and graphene decorated Cu NPs, the graphene shells can strengthen the plasmonic coupling between graphene and Cu, thereby contributing to an obvious improvement in the local electromagnetic field that was validated by finite element numerical simulations, while the 3D nitrogen

  11. Low-frequency 1/f noise in graphene devices

    Science.gov (United States)

    Balandin, Alexander A.

    2013-08-01

    Low-frequency noise with a spectral density that depends inversely on frequency has been observed in a wide variety of systems including current fluctuations in resistors, intensity fluctuations in music and signals in human cognition. In electronics, the phenomenon, which is known as 1/f noise, flicker noise or excess noise, hampers the operation of numerous devices and circuits, and can be a significant impediment to the development of practical applications from new materials. Graphene offers unique opportunities for studying 1/f noise because of its two-dimensional structure and widely tunable two-dimensional carrier concentration. The creation of practical graphene-based devices will also depend on our ability to understand and control the low-frequency noise in this material system. Here, the characteristic features of 1/f noise in graphene and few-layer graphene are reviewed, and the implications of such noise for the development of graphene-based electronics including high-frequency devices and sensors are examined.

  12. Conductance Anisotropy in Epitaxial Graphene Sheets Generated by Substrate Interactions

    Science.gov (United States)

    2010-01-01

    0001) semi-insulating sub- strates with resistivity greater than 105 ohm -cm. After growth, the samples were characterized using Nomarski interference...Trans. 2009, 19, 117–124. (15) Emtsev, K. V.; Bostwick, A.; Horn, K.; Jobst, J.; Kellogg, G. L.; Ley , L.; McChesney, J. L.; Ohta, T.; Reshanov, S. A

  13. A comparative density functional study on electrical properties of layered penta-graphene

    International Nuclear Information System (INIS)

    Yu, Zhi Gen; Zhang, Yong-Wei

    2015-01-01

    We present a comparative study of the influence of the number of layers, the biaxial strain in the range of −3% to 3%, and the stacking misalignments on the electronic properties of a new 2D carbon allotrope, penta-graphene (PG), based on hybrid-functional method within the density functional theory (DFT). In comparison with local exchange-correlation approximation in the DFT, the hybrid-functional provides an accurate description on the degree of p z orbitals localization and bandgap. Importantly, the predicted bandgap of few-layer PG has a weak layer dependence. The bandgap of monolayer PG is 3.27 eV, approximately equal to those of GaN and ZnO; and the bandgap of few-layer PG decreases slowly with the number of layers (N) and converge to 2.57 eV when N ≥ 4. Our calculations using HSE06 functional on few-layer PG reveal that bandgap engineering by stacking misalignment can further tune the bandgap down to 1.37 eV. Importantly, there is no direct-to-indirect bandgap transition in PG by varying strain, layer number, and stacking misalignment. Owing to its tunable, robustly direct, and wide bandgap characteristics, few-layer PG is promising for optoelectronic and photovoltaic applications

  14. Bound state properties of ABC -stacked trilayer graphene quantum dots

    International Nuclear Information System (INIS)

    Xiong, Haonan; Jiang, Wentao; Song, Yipu; Duan, Luming

    2017-01-01

    The few-layer graphene quantum dot provides a promising platform for quantum computing with both spin and valley degrees of freedom. Gate-defined quantum dots in particular can avoid noise from edge disorders. In connection with the recent experimental efforts (Song et al 2016 Nano Lett . 16 6245), we investigate the bound state properties of trilayer graphene (TLG) quantum dots (QDs) through numerical simulations. We show that the valley degeneracy can be lifted by breaking the time reversal symmetry through the application of a perpendicular magnetic field. The spectrum under such a potential exhibits a transition from one group of Landau levels to another group, which can be understood analytically through perturbation theory. Our results provide insight into the transport property of TLG QDs, with possible applications to study of spin qubits and valleytronics in TLG QDs. (paper)

  15. Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

    2016-07-04

    Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

  16. Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

    Science.gov (United States)

    Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Boeckl, John J.; Hellerstedt, Jack; Fuhrer, Michael S.; Iacopi, Francesca

    2016-07-01

    Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High-resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

  17. Semiconductor Nanowires: Epitaxy and Applications

    OpenAIRE

    Mårtensson, Thomas

    2008-01-01

    Semiconductor nanowires are nanoscale objects formed by bottom-up synthesis. In recent years their unique properties have been exploited in fields such as electronics, photonics, sensors and the life sciences. In this work, the epitaxial growth of nanowires and their applications were studied. Heteroepitaxial growth of III-V nanowires on silicon substrates was demonstrated. This may enable direct band gap materials for optoelectronic devices, as well as high-mobility, low-contact resis...

  18. Mechanical Graphene

    OpenAIRE

    Socolar, Joshua E. S.; Lubensky, Tom C.; Kane, Charles L.

    2016-01-01

    We present a model of a mechanical system with a vibrational mode spectrum identical to the spectrum of electronic excitations in a tight-binding model of graphene. The model consists of point masses connected by elastic couplings, called "tri-bonds," that implement certain three-body interactions, which can be tuned by varying parameters that correspond to the relative hopping amplitudes on the different bond directions in graphene. In the mechanical model, this is accomplished by varying th...

  19. Optoelectrochemical biorecognition by optically transparent highly conductive graphene-modified fluorine-doped tin oxide substrates.

    Science.gov (United States)

    Lamberti, F; Brigo, L; Favaro, M; Luni, C; Zoso, A; Cattelan, M; Agnoli, S; Brusatin, G; Granozzi, G; Giomo, M; Elvassore, N

    2014-12-24

    Both optical and electrochemical graphene-based sensors have gone through rapid development, reaching high sensitivity at low cost and with fast response time. However, the complex validating biochemical operations, needed for their consistent use, currently limits their effective application. We propose an integration strategy for optoelectrochemical detection that overcomes previous limitations of these sensors used separately. We develop an optoelectrochemical sensor for aptamer-mediated protein detection based on few-layer graphene immobilization on selectively modified fluorine-doped tin oxide (FTO) substrates. Our results show that the electrochemical properties of graphene-modified FTO samples are suitable for complex biological detection due to the stability and inertness of the engineered electrodic interface. In addition, few-layer immobilization of graphene sheets through electrostatic linkage with an electrochemically grafted FTO surface allows obtaining an optically accessible and highly conductive platform. As a proof of concept, we used insulin as the target molecule to reveal in solution. Because of its transparency and low sampling volume (a few microliters), our sensing unit can be easily integrated in lab-on-a-chip cell culture systems for effectively monitoring subnanomolar concentrations of proteins relevant for biomedical applications.

  20. Tunability of the Berry phase in gapped graphene

    OpenAIRE

    Urru, Andrea; Cocco, Giulio; Fiorentini, Vincenzo

    2015-01-01

    When a gap of tunable size opens at the conic band intersections of graphene, the Berry phase does not vanish abruptly, but progressively decreases as the gap increases. The phase depends on the reciprocal-space path radius, i.e., for a doped system, the Fermi wave vector. The phase and its observable consequences can thus be tuned continuously via gap opening --by a modulating potential induced by strain, epitaxy, or nanostructuration-- and doping adjustment.

  1. Structural disorder and electron transport in graphene at low temperatures

    Science.gov (United States)

    Bobenko, N. G.; Egorushkin, V. E.; Melnikova, N. V.; Ponomarev, A. N.; Belosludtseva, A. A.; Barkalov, L. D.

    2017-12-01

    A theoretical study of electron transport characteristics of metalized epitaxial graphene with impurities and structural inhomogeneous of the short-range order type was performed. The electron relaxation time, mean free path, and diffusion coefficient were calculated and shown to be of the same order of magnitude as the corresponding values for phonon characteristics. It means that electron scattering on the short-range ordered domains has to be taken into account, especially at low temperatures when it may dominate phonon scattering.

  2. Coating of graphene

    OpenAIRE

    Schneider, G.F.; Dekker, C.

    2014-01-01

    The present invention is in the field of highly crystalline graphene and coating said graphene with a layer. Said graphene may have further structures, such as nanopores, nanogaps, and nanoribbons. The coated graphene can be used for biomolecular analysis and modification, such as DNA-sequencing, as a sensor, etc. The invention therefor also relates to use of coated graphene.

  3. Surface-directed molecular assembly of pentacene on monolayer graphene for high-performance organic transistors.

    Science.gov (United States)

    Lee, Wi Hyoung; Park, Jaesung; Sim, Sung Hyun; Lim, Soojin; Kim, Kwang S; Hong, Byung Hee; Cho, Kilwon

    2011-03-30

    Organic electronic devices that use graphene electrodes have received considerable attention because graphene is regarded as an ideal candidate electrode material. Transfer and lithographic processes during fabrication of patterned graphene electrodes typically leave polymer residues on the graphene surfaces. However, the impact of these residues on the organic semiconductor growth mechanism on graphene surface has not been reported yet. Here, we demonstrate that polymer residues remaining on graphene surfaces induce a stand-up orientation of pentacene, thereby controlling pentacene growth such that the molecular assembly is optimal for charge transport. Thus, pentacene field-effect transistors (FETs) using source/drain monolayer graphene electrodes with polymer residues show a high field-effect mobility of 1.2 cm(2)/V s. In contrast, epitaxial growth of pentacene having molecular assembly of lying-down structure is facilitated by π-π interaction between pentacene and the clean graphene electrode without polymer residues, which adversely affects lateral charge transport at the interface between electrode and channel. Our studies provide that the obtained high field-effect mobility in pentacene FETs using monolayer graphene electrodes arises from the extrinsic effects of polymer residues as well as the intrinsic characteristics of the highly conductive, ultrathin two-dimensional monolayer graphene electrodes.

  4. Synthesis of graphene on SiC substrate via Ni-silicidation reactions

    International Nuclear Information System (INIS)

    Macháč, P.; Fidler, T.; Cichoň, S.; Mišková, L.

    2012-01-01

    In this work, the features of graphene layers are studied with the aim of preparing the thinnest layers possible. The graphene layers were prepared by the annealing of Ni/SiC structures. The main advantage of this process is a relatively low temperature compared with the method of graphene epitaxial growth on SiC and short annealing times compared with the chemical vapor deposition method. We prepared graphene layers from several Ni/SiC structures in which the Ni layer thickness ranged from 1 to 200 nm. The parameters of the annealing process (temperature, rate of temperature increase, annealing time) were modified during the experiments. The formed graphene layers were analyzed by means of Raman spectroscopy. From the spectra, the basic parameters of graphene, such as the number of carbon layers and crystallinity, were determined. The annealing of the Ni(200 nm)/SiC structure at 1080 °C for 10 s, produced graphene in the form of 3–4 carbon monolayers. The value was verified by X-ray Photoelectron Spectroscopy (XPS). Good agreement was achieved in the results obtained using Raman spectroscopy and XPS. - Highlights: ► Low temperature preparation of graphene by the annealing of Ni/SiC structures. ► Raman spectroscopy used for the analyzing of graphene layers. ► Optimal structure Ni(200)/SiC annealed at 1080 °C for 10 s. ► Graphene prepared in the form of 3–4 carbon monolayers.

  5. Atomic-scale mapping of thermoelectric power on graphene: role of defects and boundaries.

    Science.gov (United States)

    Park, Jewook; He, Guowei; Feenstra, R M; Li, An-Ping

    2013-07-10

    The spatially resolved thermoelectric power is studied on epitaxial graphene on SiC with direct correspondence to graphene atomic structures by a scanning tunneling microscopy (STM) method. A thermovoltage arises from a temperature gradient between the STM tip and the sample, and variations of thermovoltage are distinguished at defects and boundaries with atomic resolution. The epitaxial graphene has a high thermoelectric power of 42 μV/K with a big change (9.6 μV/K) at the monolayer-bilayer boundary. Long-wavelength oscillations are revealed in thermopower maps which correspond to the Friedel oscillations of electronic density of states associated with the intravalley scattering in graphene. On the same terrace of a graphene layer, thermopower distributions show domain structures that can be attributed to the modifications of local electronic structures induced by microscopic distortions (wrinkles) of graphene sheet on the SiC substrate. The thermoelectric power, the electronic structure, the carrier concentration, and their interplay are analyzed on the level of individual defects and boundaries in graphene.

  6. Fabrication of transparent, tough, and conductive shape-memory polyurethane films by incorporating a small amount of high-quality graphene.

    Science.gov (United States)

    Jung, Yong Chae; Kim, Jin Hee; Hayashi, Takuya; Kim, Yoong Ahm; Endo, Morinobu; Terrones, Mauricio; Dresselhaus, Mildred S

    2012-04-23

    We report a mechanically strong, electrically and thermally conductive, and optically transparent shape-memory polyurethane composite which was fabricated by introducing a small amount (0.1 wt%) of high-quality graphene as a filler. Geometrically large (≈4.6 μm(2)), but highly crystallized few-layer graphenes, verified by Raman spectroscopy and transmission electron microscopy, were prepared by the sonication of expandable graphite in an organic solvent. Oxygen- containing functional groups at the edge plane of graphene were crucial for an effective stress transfer from the graphene to polyurethane. Homogeneously dispersed few-layered graphene enabled polyurethane to have a high shape recovery force of 1.8 MPa cm(-3). Graphene, which is intrinsically stretchable up to 10%, will enable high-performance composites to be fabricated at relatively low cost and we thus envisage that such composites may replace carbon nanotubes for various applications in the near future. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Graphitic carbon growth on crystalline and amorphous oxide substrates using molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Kim Christine

    2011-01-01

    Full Text Available Abstract We report graphitic carbon growth on crystalline and amorphous oxide substrates by using carbon molecular beam epitaxy. The films are characterized by Raman spectroscopy and X-ray photoelectron spectroscopy. The formations of nanocrystalline graphite are observed on silicon dioxide and glass, while mainly sp2 amorphous carbons are formed on strontium titanate and yttria-stabilized zirconia. Interestingly, flat carbon layers with high degree of graphitization are formed even on amorphous oxides. Our results provide a progress toward direct graphene growth on oxide materials. PACS: 81.05.uf; 81.15.Hi; 78.30.Ly.

  8. No cytotoxicity or genotoxicity of graphene and graphene oxide in murine lung epithelial FE1 cells in vitro.

    Science.gov (United States)

    Bengtson, Stefan; Kling, Kirsten; Madsen, Anne Mette; Noergaard, Asger W; Jacobsen, Nicklas Raun; Clausen, Per Axel; Alonso, Beatriz; Pesquera, Amaia; Zurutuza, Amaia; Ramos, Raphael; Okuno, Hanako; Dijon, Jean; Wallin, Håkan; Vogel, Ulla

    2016-07-01

    Graphene and graphene oxide receive much attention these years, because they add attractive properties to a wide range of applications and products. Several studies have shown toxicological effects of other carbon-based nanomaterials such as carbon black nanoparticles and carbon nanotubes in vitro and in vivo. Here, we report in-depth physicochemical characterization of three commercial graphene materials, one graphene oxide (GO) and two reduced graphene oxides (rGO) and assess cytotoxicity and genotoxicity in the murine lung epithelial cell line FE1. The studied GO and rGO mainly consisted of 2-3 graphene layers with lateral sizes of 1-2 µm. GO had almost equimolar content of C, O, and H while the two rGO materials had lower contents of oxygen with C/O and C/H ratios of 8 and 12.8, respectively. All materials had low levels of endotoxin and low levels of inorganic impurities, which were mainly sulphur, manganese, and silicon. GO generated more ROS than the two rGO materials, but none of the graphene materials influenced cytotoxicity in terms of cell viability and cell proliferation after 24 hr. Furthermore, no genotoxicity was observed using the alkaline comet assay following 3 or 24 hr of exposure. We demonstrate that chemically pure, few-layered GO and rGO with comparable lateral size (> 1 µm) do not induce significant cytotoxicity or genotoxicity in FE1 cells at relatively high doses (5-200 µg/ml). Environ. Mol. Mutagen. 57:469-482, 2016. © 2016 The Authors. Environmental and Molecular Mutagenesis Published by Wiley Periodicals, Inc. © 2016 The Authors. Environmental and Molecular Mutagenesis Published by Wiley Periodicals, Inc.

  9. Electrodeposited Reduced Graphene Oxide Films on Stainless Steel, Copper, and Aluminum for Corrosion Protection Enhancement

    Directory of Open Access Journals (Sweden)

    Abdulkareem Mohammed Ali Al-Sammarraie

    2017-01-01

    Full Text Available The enhancement of corrosion protection of metals and alloys by coating with simple, low cost, and highly adhered layer is still a main goal of many workers. In this research graphite flakes converted into graphene oxide using modified Hammers method and then reduced graphene oxide was electrodeposited on stainless steel 316, copper, and aluminum for corrosion protection application in seawater at four temperatures, namely, 20, 30, 40, and 50°C. All corrosion measurements, kinetics, and thermodynamics parameters were established from Tafel plots using three-electrode potentiostat. The deposited films were examined by FTIR, Raman, XRD, SEM, and AFM techniques; they revealed high percentages of conversion to the few layers of graphene with confirmed defects.

  10. Graphene-Au nanoparticle based vertical heterostructures: a novel route towards high- ZT Thermoelectric devices

    KAUST Repository

    Juang, Zhen-Yu

    2017-06-03

    Monolayer graphene exhibits impressive in-plane thermal conductivity (>1000Wm–1 K–1). However, the out-of-plane thermal transport is limited due to the weak van der Waals interaction, indicating the possibility of constructing a vertical thermoelectric (TE) device. Here, we propose a cross-plane TE device based on the vertical heterostructures of few-layer graphene and gold nanoparticles (AuNPs) on Si substrates, where the incorporation of AuNPs further inhibits the phonon transport and enhances the electrical conductivity along vertical direction. A measurable Seebeck voltage is produced vertically between top graphene and bottom Si when the device is put on a hot surface and the figure of merit ZT is estimated as 1 at room temperature from the transient Harman method. The polarity of the output voltage is determined by the carrier polarity of the substrate. The device concept is also applicable to a flexible and transparent substrate as demonstrated.

  11. Damping of Landau levels in neutral graphene at low magnetic fields: A phonon Raman scattering study

    Science.gov (United States)

    Ardito, F. M.; Mendes-de-Sá, T. G.; Cadore, A. R.; Gomes, P. F.; Mafra, D. L.; Barcelos, I. D.; Lacerda, R. G.; Iikawa, F.; Granado, E.

    2018-01-01

    Landau level broadening mechanisms in electrically neutral and quasineutral graphene were investigated through micro-magneto-Raman experiments in three different samples, namely, a natural single-layer graphene flake and a back-gated single-layer device, both deposited over Si/SiO 2 substrates, and a multilayer epitaxial graphene employed as a reference sample. Interband Landau level transition widths were estimated through a quantitative analysis of the magnetophonon resonances associated with optically active Landau level transitions crossing the energy of the E2 g Raman-active phonon. Contrary to multilayer graphene, the single-layer graphene samples show a strong damping of the low-field resonances, consistent with an additional broadening contribution of the Landau level energies arising from a random strain field. This extra contribution is properly quantified in terms of a pseudomagnetic field distribution Δ B =1.0 -1.7 T in our single-layer samples.

  12. Large single crystals of graphene on melted copper using chemical vapor deposition.

    Science.gov (United States)

    Wu, Yimin A; Fan, Ye; Speller, Susannah; Creeth, Graham L; Sadowski, Jerzy T; He, Kuang; Robertson, Alex W; Allen, Christopher S; Warner, Jamie H

    2012-06-26

    A simple method is presented for synthesizing large single crystal graphene domains on melted copper using atmospheric pressure chemical vapor deposition (CVD). This is achieved by performing the reaction above the melting point of copper (1090 °C) and using a molybdenum or tungsten support to prevent balling of the copper from dewetting. By controlling the amount of hydrogen during growth, individual single crystal domains of monolayer graphene greater than 200 μm are produced within a continuous film. Stopping growth before a complete film is formed reveals individual hexagonal domains of graphene that are epitaxially aligned in their orientation. Angular resolved photoemission spectroscopy is used to show that the graphene grown on copper exhibits a linear dispersion relationship and no sign of doping. HRTEM and electron diffraction reveal a uniform high quality crystalline atomic structure of monolayer graphene.

  13. Growth of bi- and tri-layered graphene on silicon carbide substrate via molecular dynamics simulation

    Energy Technology Data Exchange (ETDEWEB)

    Min, Tjun Kit; Yoon, Tiem Leong [School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Lim, Thong Leng [Faculty of Engineering and Technology, Multimedia University, Melaka Campus, 75450 Melaka (Malaysia)

    2015-04-24

    Molecular dynamics (MD) simulation with simulated annealing method is used to study the growth process of bi- and tri-layered graphene on a 6H-SiC (0001) substrate via molecular dynamics simulation. Tersoff-Albe-Erhart (TEA) potential is used to describe the inter-atomic interactions among the atoms in the system. The formation temperature, averaged carbon-carbon bond length, pair correlation function, binding energy and the distance between the graphene formed and the SiC substrate are quantified. The growth mechanism, graphitization of graphene on the SiC substrate and characteristics of the surface morphology of the graphene sheet obtained in our MD simulation compare well to that observed in epitaxially grown graphene experiments and other simulation works.

  14. Biomedical applications of graphene and graphene oxide.

    Science.gov (United States)

    Chung, Chul; Kim, Young-Kwan; Shin, Dolly; Ryoo, Soo-Ryoon; Hong, Byung Hee; Min, Dal-Hee

    2013-10-15

    Graphene has unique mechanical, electronic, and optical properties, which researchers have used to develop novel electronic materials including transparent conductors and ultrafast transistors. Recently, the understanding of various chemical properties of graphene has facilitated its application in high-performance devices that generate and store energy. Graphene is now expanding its territory beyond electronic and chemical applications toward biomedical areas such as precise biosensing through graphene-quenched fluorescence, graphene-enhanced cell differentiation and growth, and graphene-assisted laser desorption/ionization for mass spectrometry. In this Account, we review recent efforts to apply graphene and graphene oxides (GO) to biomedical research and a few different approaches to prepare graphene materials designed for biomedical applications. Because of its excellent aqueous processability, amphiphilicity, surface functionalizability, surface enhanced Raman scattering (SERS), and fluorescence quenching ability, GO chemically exfoliated from oxidized graphite is considered a promising material for biological applications. In addition, the hydrophobicity and flexibility of large-area graphene synthesized by chemical vapor deposition (CVD) allow this material to play an important role in cell growth and differentiation. The lack of acceptable classification standards of graphene derivatives based on chemical and physical properties has hindered the biological application of graphene derivatives. The development of an efficient graphene-based biosensor requires stable biofunctionalization of graphene derivatives under physiological conditions with minimal loss of their unique properties. For the development graphene-based therapeutics, researchers will need to build on the standardization of graphene derivatives and study the biofunctionalization of graphene to clearly understand how cells respond to exposure to graphene derivatives. Although several

  15. Large area planar stanene epitaxially grown on Ag(1 1 1)

    Science.gov (United States)

    Yuhara, Junji; Fujii, Yuya; Nishino, Kazuki; Isobe, Naoki; Nakatake, Masashi; Xian, Lede; Rubio, Angel; Le Lay, Guy

    2018-04-01

    Artificial post-graphene elemental 2D materials have received much attention recently. Especially, stanene, the tin analogue of graphene, is expected to be a robust 2D topological insulator, even above room temperature. We have grown epitaxial 2D stanene on a Ag(1 1 1) single crystal template and determined its crystalline structure synergetically by scanning tunneling microscopy, high-resolution synchrotron radiation photoemission spectroscopy, and advanced first principles calculations. From the STM images, we show that stanene forms a nearly planar structure in large domains. A detailed core-level spectroscopy analysis as well as DFT calculations reveal that the stanene sheet lays over an ordered 2D Ag2Sn surface alloy, but not directly on a bulk-terminated Ag(1 1 1) surface. The electronic structure exhibits a characteristic 2D band with parabolic dispersion due to the non-negligible interaction with the underlying surface alloy.

  16. A new direct growth method of graphene on Si-face of 6H-SiC by synergy of the inner and external carbon sources

    Science.gov (United States)

    Yang, Zhiyuan; Xu, Shicai; Zhao, Lili; Zhang, Jing; Wang, Zhengping; Chen, Xiufang; Cheng, Xiufeng; Yu, Fapeng; Zhao, Xian

    2018-04-01

    Graphene is a promising two-dimensional material that has possible application in various disciplines, due to its super properties, including high carrier mobility, chemical stability, and optical transparency etc. In this paper, we report an inner and external carbon synergy (IECS) method to grow graphene on Si-face of 6H-SiC. This method combined the advantages of chemical vapor deposition (CVD) and traditional epitaxial growth (EG) based on silicon carbide, which providing a feasible approach for growing graphene on the SiC substrates. The graphene was synthesized within just 3 min, which was more than one order of magnitude faster than the graphene grown on 6H-SiC substrates by the traditional EG method. The growth temperature was ∼200 °C lower than the EG process. The directly grown graphene maintained the compatibility with the semiconductor technique, which is benefit for use in graphene-based microelectronic devices.

  17. Spatial variation of the number of graphene layers formed on the scratched 6H-SiC(0 0 0 1) surface

    International Nuclear Information System (INIS)

    Osaklung, J.; Euaruksakul, C.; Meevasana, W.; Songsiriritthigul, P.

    2012-01-01

    The unique properties of graphene can vary greatly depending on the number of graphene layers; therefore, spatial control of graphene thickness is desired to fully exploit these properties in promising new devices. Using low energy electron microscopy (LEEM), we investigate how scratches on the surface of 6H-SiC(0 0 0 1) affect the epitaxial growth of graphene. Oscillations in the LEEM-image intensity as a function of electron energy (I-V LEEM analysis) show that the number of graphene layers clearly differs between regions of scratched and smooth substrate. The extent of the thicker graphene layers formed above scratches is found to be significantly larger than the width of the scratch itself. This finding can be implemented as an additional technique for spatially modulating graphene thickness.

  18. Large scale graphene/hexagonal boron nitride heterostructure for tunable plasmonics

    KAUST Repository

    Zhang, Kai

    2013-09-01

    Vertical integration of hexagonal boron nitride (h-BN) and graphene for the fabrication of vertical field-effect transistors or tunneling diodes has stimulated intense interest recently due to the enhanced performance offered by combining an ultrathin dielectric with a semi-metallic system. Wafer scale fabrication and processing of these heterostructures is needed to make large scale integrated circuitry. In this work, by using remote discharged, radio-frequency plasma chemical vapor deposition, wafer scale, high quality few layer h-BN films are successfully grown. By using few layer h-BN films as top gate dielectric material, the plasmon energy of graphene can be tuned by electrostatic doping. An array of graphene/h-BN vertically stacked micrometer-sized disks is fabricated by lithography and transfer techniques, and infrared spectroscopy is used to observe the modes of tunable graphene plasmonic absorption as a function of the repeating (G/h-BN)n units in the vertical stack. Interestingly, the plasmonic resonances can be tuned to higher frequencies with increasing layer thickness of the disks, showing that such vertical stacking provides a viable strategy to provide wide window tuning of the plasmons beyond the limitation of the monolayer. An array of graphene/h-BN vertically stacked micrometer-sized disks is fabricated by lithography and transfer techniques, and infrared spectroscopy is used to observe the modes of tunable graphene plasmonic absorption as a function of the repeating (G/h-BN)n units in the vertical stack. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Ultralow friction of ink-jet printed graphene flakes.

    Science.gov (United States)

    Buzio, R; Gerbi, A; Uttiya, S; Bernini, C; Del Rio Castillo, A E; Palazon, F; Siri, A S; Pellegrini, V; Pellegrino, L; Bonaccorso, F

    2017-06-08

    We report the frictional response of few-layer graphene (FLG) flakes obtained by the liquid phase exfoliation (LPE) of pristine graphite. To this end, we inkjet print FLG on bare and hexamethyldisilazane-terminated SiO 2 substrates, producing micrometric patterns with nanoscopic roughness that are investigated by atomic force microscopy. Normal force spectroscopy and atomically-resolved morphologies indicate reduced surface contamination by solvents after a vacuum annealing process. Notably, the printed FLG flakes show ultralow friction comparable to that of micromechanically exfoliated graphene flakes. Lubricity is retained on flakes with a lateral size of a few tens of nanometres, and with a thickness as small as ∼2 nm, confirming the high crystalline quality and low defects density in the FLG basal plane. Surface exposed step edges exhibit the highest friction values, representing the preferential sites for the origin of the secondary dissipative processes related to edge straining, wear or lateral displacement of the flakes. Our work demonstrates that LPE enables fundamental studies on graphene friction to the single-flake level. The capability to deliver ultralow-friction-graphene over technologically relevant substrates, using a scalable production route and a high-throughput, large-area printing technique, may also open up new opportunities in the lubrication of micro- and nano-electromechanical systems.

  20. Dispersions of non-covalently functionalized graphene with minimal stabilizer

    Science.gov (United States)

    Parviz, Dorsa; Das, Sriya; Irin, Fahmida; Green, Micah

    2013-03-01

    Pyrene derivatives are promising substitutes of surfactants and polymers for stabilization of graphene in aqueous dispersions. We demonstrate that pyrene derivatives stabilize single- to few-layer graphene sheets, yielding exceptionally higher graphene/stabilizer ratio in comparison with conventional stabilizers. Parameters such as stabilizer concentration, initial graphite concentration, type and number of functional groups, counterions, the pH and the polarity of dispersion media were shown to affect the adsorption process and final graphene concentration. The effectiveness of pyrene derivatives is determined by the type, number and electronegativity of functional groups and counterion. It also depends on the distance between functional group and pyrene basal plan, the pH of the dispersion (as shown by zeta potential measurements) and the relative polarity between stabilizer and solvent. Stability of the dispersions against centrifugation, pH and temperature changes and lyophilization was investigated. These dispersions also show promise for applications to polymer nanocomposites, organic solar cells, conductive films, and inkjet-printed electronic devices.

  1. Graphene Transparent Conductive Electrodes

    Data.gov (United States)

    National Aeronautics and Space Administration — As an atomic layer of graphite, graphene has ultrahigh optical transparency and superior electron mobility. We plan to develop graphene transparent conductive...

  2. Epitaxy, thin films and superlattices

    International Nuclear Information System (INIS)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au)

  3. Epitaxy, thin films and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

  4. In Situ Exfoliation of Graphene in Epoxy Resins: A Facile Strategy to Efficient and Large Scale Graphene Nanocomposites.

    Science.gov (United States)

    Li, Yan; Zhang, Han; Crespo, Maria; Porwal, Harshit; Picot, Olivier; Santagiuliana, Giovanni; Huang, Zhaohui; Barbieri, Ettore; Pugno, Nicola M; Peijs, Ton; Bilotti, Emiliano

    2016-09-14

    Any industrial application aiming at exploiting the exceptional properties of graphene in composites or coatings is currently limited by finding viable production methods for large volumes of good quality and high aspect ratio graphene, few layer graphene (FLG) or graphite nanoplatelets (GNP). Final properties of the resulting composites are inherently related to those of the initial graphitic nanoparticles, which typically depend on time-consuming, resource-demanding and/or low yield liquid exfoliation processes. In addition, efficient dispersion of these nanofillers in polymer matrices, and their interaction, is of paramount importance. Here we show that it is possible to produce graphene/epoxy nanocomposites in situ and with high conversion of graphite to FLG/GNP through the process of three-roll milling (TRM), without the need of any additives, solvents, compatibilisers or chemical treatments. This readily scalable production method allows for more than 5 wt % of natural graphite (NG) to be directly exfoliated into FLG/GNP and dispersed in an epoxy resin. The in situ exfoliated graphitic nanoplatelets, with average aspect ratios of 300-1000 and thicknesses of 5-17 nm, were demonstrated to conferee exceptional enhancements in mechanical and electrical properties to the epoxy resin. The above conclusions are discussed and interpreted in terms of simple analytical models.

  5. Chemically engineered graphene-based 2D organic molecular magnet.

    Science.gov (United States)

    Hong, Jeongmin; Bekyarova, Elena; de Heer, Walt A; Haddon, Robert C; Khizroev, Sakhrat

    2013-11-26

    Carbon-based magnetic materials and structures of mesoscopic dimensions may offer unique opportunities for future nanomagnetoelectronic/spintronic devices. To achieve their potential, carbon nanosystems must have controllable magnetic properties. We demonstrate that nitrophenyl functionalized graphene can act as a room-temperature 2D magnet. We report a comprehensive study of low-temperature magnetotransport, vibrating sample magnetometry (VSM), and superconducting quantum interference (SQUID) measurements before and after radical functionalization. Following nitrophenyl (NP) functionalization, epitaxially grown graphene systems can become organic molecular magnets with ferromagnetic and antiferromagnetic ordering that persists at temperatures above 400 K. The field-dependent, surface magnetoelectric properties were studied using scanning probe microscopy (SPM) techniques. The results indicate that the NP-functionalization orientation and degree of coverage directly affect the magnetic properties of the graphene surface. In addition, graphene-based organic magnetic nanostructures were found to demonstrate a pronounced magneto-optical Kerr effect (MOKE). The results were consistent across different characterization techniques and indicate room-temperature magnetic ordering along preferred graphene orientations in the NP-functionalized samples. Chemically isolated graphene nanoribbons (CINs) were observed along the preferred functionality directions. These results pave the way for future magnetoelectronic/spintronic applications based on promising concepts such as current-induced magnetization switching, magnetoelectricity, half-metallicity, and quantum tunneling of magnetization.

  6. Pumping requirements and options for molecular beam epitaxy and gas source molecular beam epitaxy/chemical beam epitaxy

    International Nuclear Information System (INIS)

    McCollum, M.J.; Plano, M.A.; Haase, M.A.; Robbins, V.M.; Jackson, S.L.; Cheng, K.Y.; Stillman, G.E.

    1989-01-01

    This paper discusses the use of gas sources in growth by MBE as a result of current interest in growth of InP/InGaAsP/InGaAs lattice matched to InP. For gas flows greater than a few sccm, pumping speed requirements dictate the use of turbomolecular or diffusion pumps. GaAs samples with high p-type mobilities have been grown with diffusion pumped molecular beam epitaxial system. According to the authors, this demonstration of the inherent cleanliness of a properly designed diffusion pumping system indicates that a diffusion pump is an excellent inexpensive and reliable choice for growth by molecular beam epitaxy and gas source molecular beam epitaxy/chemical beam epitaxy

  7. Highly resolving scanning-force microscopy on graphene and carbon monoxide; Hochaufloesende Rasterkraftmikroskopie auf Graphen und Kohlenmonoxid

    Energy Technology Data Exchange (ETDEWEB)

    Hofmann, Thomas

    2014-08-01

    Scanning-force microscopes are essential means for the study of the atomic structure of surfaces. For the interpretation of the measurements it is though in many cases necessary to have precise informations about the chemical and structural properties of the tip cluster. In the first part of the thesis it is shown that both the crystallographic orientation and the chemical identity of the tip atom of a metal tip can be determined by scanning of a CO molecule, which is adsorbed on a copper surface. In the second part the mapping of epitaxial graphene on SiC is studied with so characterized metal tips as well as with a CO tip. Thereby it is show that graphene cannot be accurately mapped with metal tips. Furthermore the strong attraction between metal tips and graphene, respectively on graphene adsorbed molecules, leads to problems in the mapping, like instabilities or a contamination of the metal tip. With the inert CO tip the graphene surface at moderate distances between tip and sample is realistically mapped. For small distances the relaxation of the CO tip though leads to artefacts in the images. Furthermore the oscillation of the force sensor becomes anharmonic, which is related to the formation of a binding between the graphene layer and the underlying carbon layer.

  8. Thermal Management of Concentrated Multi-Junction Solar Cells with Graphene-Enhanced Thermal Interface Materials

    Directory of Open Access Journals (Sweden)

    Mohammed Saadah

    2017-06-01

    Full Text Available We report results of experimental investigation of temperature rise in concentrated multi-junction photovoltaic solar cells with graphene-enhanced thermal interface materials. Graphene and few-layer graphene fillers, produced by a scalable environmentally-friendly liquid-phase exfoliation technique, were incorporated into conventional thermal interface materials. Graphene-enhanced thermal interface materials have been applied between a solar cell and heat sink to improve heat dissipation. The performance of the multi-junction solar cells has been tested using an industry-standard solar simulator under a light concentration of up to 2000 suns. It was found that the application of graphene-enhanced thermal interface materials allows one to reduce the solar cell temperature and increase the open-circuit voltage. We demonstrated that the use of graphene helps in recovering a significant amount of the power loss due to solar cell overheating. The obtained results are important for the development of new technologies for thermal management of concentrated photovoltaic solar cells.

  9. Electrical transport properties of graphene nanoribbons produced from sonicating graphite in solution.

    Science.gov (United States)

    Ling, Cheng; Setzler, Gabriel; Lin, Ming-Wei; Dhindsa, Kulwinder Singh; Jin, Jin; Yoon, Hyeun Joong; Kim, Seung Soo; Ming-Cheng Cheng, Mark; Widjaja, Noppi; Zhou, Zhixian

    2011-08-12

    A simple one-stage solution-based method was developed to produce graphene nanoribbons by sonicating graphite powder in organic solutions with polymer surfactant. The graphene nanoribbons were deposited on a silicon substrate, and characterized by Raman spectroscopy and atomic force microscopy. Single-layer and few-layer graphene nanoribbons with a width ranging from sub-10 nm to tens of nanometers and lengths ranging from hundreds of nanometers to 1 µm were routinely observed. The electrical transport properties of individual graphene nanoribbons were measured in both the back-gate and polymer-electrolyte top-gate configurations. The mobility of the graphene nanoribbons was found to be over an order of magnitude higher when measured in the latter than in the former configuration (without the polymer-electrolyte), which can be attributed to the screening of the charged impurities by the counter ions in the polymer-electrolyte. This finding suggests that the charge transport in these solution produced graphene nanoribbons is largely limited by charge impurity scattering.

  10. Combustion Synthesis of Graphene from Waste Paper for High Performance Supercapacitor Electrodes

    Science.gov (United States)

    Singu, Dayakar Chowdary; Joseph, B.; Velmurugan, V.; Ravuri, Syamsai; Grace, A. Nirmala

    Incessant streak of unsuccessful attempts to synthesize low cost graphene with larger flake size and purity is frequently reported. Any reported methods that result in few layers of graphene with minimal contamination are definitive to exist. In this work, graphene was prepared economically from source of “paper” and detailed investigation was done on the effect of synthesizing parameters like paper source, temperature and amount of urea in the formation of graphene. This is a cost effective method, in which the paper that we use in our daily life was carbonized with the help of urea at a temperature of 850∘C under N2 atmosphere. The paper source was varied, shape of the paper was altered and the graphene paper with large surface area was synthesized without smudging and the prepared graphene paper was analyzed by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) for its structural, morphological investigation. To test the supercapacitance performance, electrochemical behavior was investigated in 6M KOH electrolyte. The specific capacitance of 1122F/g was obtained at 5mV/s scan rate. Chronopotentiometry curves showed an excellent cyclic stability with higher charge/discharge duration and hence could be used for electrochemical supercapacitor applications.

  11. The Many Faces of Graphene as Protection Barrier. Performance under Microbial Corrosion and Ni Allergy Conditions

    Directory of Open Access Journals (Sweden)

    Carolina Parra

    2017-12-01

    Full Text Available In this work we present a study on the performance of CVD (chemical vapor deposition graphene coatings grown and transferred on Ni as protection barriers under two scenarios that lead to unwanted metal ion release, microbial corrosion and allergy test conditions. These phenomena have a strong impact in different fields considering nickel (or its alloys is one of the most widely used metals in industrial and consumer products. Microbial corrosion costs represent fractions of national gross product in different developed countries, whereas Ni allergy is one of the most prevalent allergic conditions in the western world, affecting around 10% of the population. We found that grown graphene coatings act as a protective membrane in biological environments that decreases microbial corrosion of Ni and reduces release of Ni2+ ions (source of Ni allergic contact hypersensitivity when in contact with sweat. This performance seems not to be connected to the strong orbital hybridization that Ni and graphene interface present, indicating electron transfer might not be playing a main role in the robust response of this nanostructured system. The observed protection from biological environment can be understood in terms of graphene impermeability to transfer Ni2+ ions, which is enhanced for few layers of graphene grown on Ni. We expect our work will provide a new route for application of graphene as a protection coating for metals in biological environments, where current strategies have shown short-term efficiency and have raised health concerns.

  12. Electrothermally Tunable Graphene Resonators Operating at Very High Temperature up to 1200 K.

    Science.gov (United States)

    Ye, Fan; Lee, Jaesung; Feng, Philip X-L

    2018-02-23

    The unique negative thermal expansion coefficient and remarkable thermal stability of graphene make it an ideal candidate for nanoelectromechanical systems (NEMS) with electrothermal tuning. We report on the first experimental demonstration of electrothermally tuned single- and few-layer graphene NEMS resonators operating in the high frequency (HF) and very high frequency (VHF) bands. In single-, bi-, and trilayer (1L, 2L, and 3L) graphene resonators with carefully controlled Joule heating, we have demonstrated remarkably broad frequency tuning up to Δf/f 0 ≈ 310%. Simultaneously, device temperature variations imposed by Joule heating are monitored using Raman spectroscopy; we find that the device temperature increases from 300 K up to 1200 K, which is the highest operating temperature known to date for electromechanical resonators. Using the measured frequency and temperature variations, we further extract both thermal expansion coefficients and thermal conductivities of these devices. Comparison with graphene electrostatic gate tuning indicates that electrothermal tuning is more efficient. The results clearly suggest that the unique negative thermal expansion coefficient of graphene and its excellent tolerance to very high temperature can be exploited for engineering highly tunable and robust graphene transducers for harsh and extreme environments.

  13. The Many Faces of Graphene as Protection Barrier. Performance under Microbial Corrosion and Ni Allergy Conditions

    Science.gov (United States)

    Gentil, Dana; del Campo, Valeria; Henrique Rodrigues da Cunha, Thiago; Henríquez, Ricardo; Garín, Carolina; Ramírez, Cristian; Flores, Marcos; Seeger, Michael

    2017-01-01

    In this work we present a study on the performance of CVD (chemical vapor deposition) graphene coatings grown and transferred on Ni as protection barriers under two scenarios that lead to unwanted metal ion release, microbial corrosion and allergy test conditions. These phenomena have a strong impact in different fields considering nickel (or its alloys) is one of the most widely used metals in industrial and consumer products. Microbial corrosion costs represent fractions of national gross product in different developed countries, whereas Ni allergy is one of the most prevalent allergic conditions in the western world, affecting around 10% of the population. We found that grown graphene coatings act as a protective membrane in biological environments that decreases microbial corrosion of Ni and reduces release of Ni2+ ions (source of Ni allergic contact hypersensitivity) when in contact with sweat. This performance seems not to be connected to the strong orbital hybridization that Ni and graphene interface present, indicating electron transfer might not be playing a main role in the robust response of this nanostructured system. The observed protection from biological environment can be understood in terms of graphene impermeability to transfer Ni2+ ions, which is enhanced for few layers of graphene grown on Ni. We expect our work will provide a new route for application of graphene as a protection coating for metals in biological environments, where current strategies have shown short-term efficiency and have raised health concerns. PMID:29292763

  14. Surface enhanced Raman spectroscopy platform based on graphene with one-year stability

    Energy Technology Data Exchange (ETDEWEB)

    Tite, Teddy [Univ Lyon, UJM-Saint-Etienne, CNRS, Laboratoire Hubert Curien UMR 5516, 18 rue Professeur Benoit Lauras, F-42000 Saint-Etienne (France); Barnier, Vincent [Ecole Nationale Supérieure des Mines, CNRS, Laboratoire Georges Friedel UMR 5307, 158 cours Fauriel, F-42023 Saint-Etienne (France); Donnet, Christophe, E-mail: Christophe.Donnet@univ-st-etienne.fr [Univ Lyon, UJM-Saint-Etienne, CNRS, Laboratoire Hubert Curien UMR 5516, 18 rue Professeur Benoit Lauras, F-42000 Saint-Etienne (France); Loir, Anne–Sophie; Reynaud, Stéphanie; Michalon, Jean–Yves; Vocanson, Francis; Garrelie, Florence [Univ Lyon, UJM-Saint-Etienne, CNRS, Laboratoire Hubert Curien UMR 5516, 18 rue Professeur Benoit Lauras, F-42000 Saint-Etienne (France)

    2016-04-01

    We report the synthesis, characterization and use of a robust surface enhanced Raman spectroscopy platform with a stable detection for up to one year of Rhodamine R6G at a concentration of 10{sup −6} M. The detection of aminothiophenol and methyl parathion, as active molecules of commercial insecticides, is further demonstrated at concentrations down to 10{sup −5}–10{sup −6} M. This platform is based on large scale textured few-layer (fl) graphene obtained without any need of graphene transfer. The synthesis route is based on diamond-like carbon films grown by pulsed laser deposition, deposited onto silicon substrates covered by a Ni layer prior to diamond-like carbon deposition. The formation of fl-graphene film, confirmed by Raman spectroscopy and mapping, is obtained by thermal annealing inducing the diffusion of Ni atoms and the concomitant formation of nickel silicide compounds, as identified by Raman and Auger electron spectroscopies. The textured fl-graphene films were decorated with gold nanoparticles to optimize the efficiency of the SERS device to detect organic molecules at low concentrations. - Highlights: • Synthesis of graphene film from amorphous carbon by pulsed laser deposition with nickel catalyst • Large scale textured graphene with nanoscale roughness obtained through nickel silicide formation • Films used for surface enhanced Raman spectroscopy detection of organophosphate compounds • Stability of the SERS platforms over up to one year.

  15. Nondestructive and in situ determination of graphene layers using optical fiber Fabry–Perot interference

    International Nuclear Information System (INIS)

    Li, Cheng; Peng, Xiaobin; Liu, Qianwen; Fan, Shangchun; Gan, Xin; Lv, Ruitao

    2017-01-01

    Thickness measurement plays an important role for characterizing optomechanical behaviors of graphene. From the view of graphene-based Fabry–Perot (F–P) sensors, a simple, nondestructive and in situ method of determining the thickness of nanothick graphene membranes was demonstrated by using optical fiber F–P interference. Few-layer/multilayer graphene sheets were suspendedly adhered onto the endface of a ferrule with a 125 µ m inner diameter by van der Waals interactions to construct micro F–P cavities. Along with the Fresnel’s law and complex index of refraction of the membrane working as a light reflector of an F–P interferometer, the optical reflectivity of graphene was modeled to investigate the effects of light wavelength and temperature. Then the average thickness of graphene membranes were extracted by F–P interference demodulation, and yielded a very strong cross-correlation coefficient of 99.95% with the experimental results observed by Raman spectrum and atomic force microscope. The method could be further extended for determining the number of layers of other 2D materials. (paper)

  16. Coating of graphene

    NARCIS (Netherlands)

    Schneider, G.F.; Dekker, C.

    2014-01-01

    The present invention is in the field of highly crystalline graphene and coating said graphene with a layer. Said graphene may have further structures, such as nanopores, nanogaps, and nanoribbons. The coated graphene can be used for biomolecular analysis and modification, such as DNA-sequencing, as

  17. Epitaxy of semiconductor-superconductor nanowires

    DEFF Research Database (Denmark)

    Krogstrup, P.; Ziino, N.L.B.; Chang, W.

    2015-01-01

    Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface...... plays a key role in determining the quality of the induced superconducting gap. Here we present epitaxial growth of semiconductor-metal core-shell nanowires by molecular beam epitaxy, a method that provides a conceptually new route to controlled electrical contacting of nanostructures and the design...... of devices for specialized applications such as topological and gate-controlled superconducting electronics. Our materials of choice, InAs/Al grown with epitaxially matched single-plane interfaces, and alternative semiconductor/metal combinations allowing epitaxial interface matching in nanowires...

  18. Molecular beam epitaxy a short history

    CERN Document Server

    Orton, J W

    2015-01-01

    This volume describes the development of molecular beam epitaxy from its origins in the 1960s through to the present day. It begins with a short historical account of other methods of crystal growth, both bulk and epitaxial, to set the subject in context, emphasising the wide range of semiconductor materials employed. This is followed by an introduction to molecular beams and their use in the Stern-Gerlach experiment and the development of the microwave MASER.

  19. Influence of the Total Gas Flow at Different Reaction Times for CVD-Graphene Synthesis on Polycrystalline Nickel

    Directory of Open Access Journals (Sweden)

    M. P. Lavin-Lopez

    2016-01-01

    Full Text Available Optimization of the total gas flow (CH4+H2 during the reaction step for different reaction times for CVD-graphene synthesis on polycrystalline nickel foil using an atmospheric pressure set-up is reported. A thickness value related to number of graphene layers in each of the synthesized samples was determined using an Excel-VBA application. This method assigned a thickness value between 1 and 1000 and provided information on the percentage of each type of graphene (monolayer, bilayer, and multilayer deposited onto the polycrystalline nickel sheet. The influence of the total gas flow during the reaction step and the reaction time was studied in detail. Optical microscopy showed that samples were covered with different types of graphene, such as multilayer, few-layer, bilayer, and monolayer graphene. The synthesis variables were optimized according to the thickness value and the results were verified by Raman spectroscopy. The best conditions were obtained with a reaction temperature of 980°C, a CH4/H2 flow rate ratio of 0.07 v/v, a reaction time of 1 minute, and a total gas flow of 80 NmL/min. In the sample obtained under the optimized conditions, 80% of the area was covered with monolayer graphene and less than 1% with multilayer graphene.

  20. Bromination of graphene: a new route to making high performance transparent conducting electrodes with low optical losses

    KAUST Repository

    Mansour, Ahmed

    2015-09-03

    The high optical transmittance, electrical conductivity, flexibility and chemical stability of graphene have triggered great interest in its application as a transparent conducting electrode material and as a potential replacement for indium doped tin oxide. However, currently available large scale production methods such as chemical vapor deposition produce polycrystalline graphene, and require additional transfer process which further introduces defects and impurities resulting in a significant increase in its sheet resistance. Doping of graphene with foreign atoms has been a popular route for reducing its sheet resistance which typically comes at a significant loss in optical transmission. Herein, we report the successful bromine doping of graphene resulting in air-stable transparent conducting electrodes with up to 80% reduction of sheet resistance reaching ~180 Ω/ at the cost of 2-3% loss of optical transmission in case of few layer graphene and 0.8% in case of single layer graphene. The remarkably low tradeoff in optical transparency leads to the highest enhancements in figure of merit reported thus far. Furthermore, our results show a controlled increase in the workfunction up to 0.3 eV with the bromine content. These results should help pave the way for further development of graphene as potentially a highly transparent substitute to other transparent conducting electrodes in optoelectronic devices.

  1. The sensitivity of graphene “snap-through” to substrate geometry

    KAUST Repository

    Wagner, Till J. W.

    2012-01-01

    We study theoretically the deposition of few layer graphene sheets onto a grooved substrate incorporating adhesion between substrate and sheet. We develop a model to understand the equilibrium of the sheet allowing for partial conformation of sheet to substrate. This model gives physical insight into recent observations of snap-through from flat to conforming states and emphasizes the crucial role of substrate shape in determining the nature of this transition. Our analytical results are consistent with numerical simulations using a van der Waals-like interaction. Finally, we propose a substrate shape that should exhibit a continuous, rather than snap-through, transition. © 2012 American Institute of Physics.

  2. Epitaxial growth of HfS2 on sapphire by chemical vapor deposition and application for photodetectors

    Science.gov (United States)

    Wang, Denggui; Zhang, Xingwang; Liu, Heng; Meng, Junhua; Xia, Jing; Yin, Zhigang; Wang, Ye; You, Jingbi; Meng, Xiang-Min

    2017-09-01

    Group IVB transition metal (Zr and Hf) dichalcogenides (TMDs) have been attracting intensive attention as promising candidates in the modern electronic and/or optoelectronic fields. However, the controllable growth of HfS2 monolayers or few layers still remains a great challenge, thus hindering their further applications so far. Here, for the first time we demonstrate the epitaxial growth of high-quality HfS2 with a controlled number of layers on c-plane sapphire substrates by chemical vapor deposition (CVD). The HfS2 layers exhibit an atomically sharp interface with the sapphire substrate, followed by flat, 2D layers with octahedral coordination. The epitaxial relationship between HfS2 and substrate was determined by x-ray diffraction and transmission electron microscopy measurements to be: HfS2 (0 0 0 1) [10-10]||sapphire (0 0 0 1)[1-100]. Moreover, a high-performance photodetector with a high on/off ratio of more than 103 and an ultrafast response rate of 130 µs for the rise and 155 µs for the decay times were fabricated based on the CVD-grown HfS2 layers on sapphire substrates. This simple and controllable approach opens up a new way to produce highly crystalline HfS2 atomic layers, which are promising materials for nanoelectronics.

  3. Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Alaskar, Yazeed; Arafin, Shamsul; Lin, Qiyin; Wickramaratne, Darshana; McKay, Jeff; Norman, Andrew G.; Zhang, Zhi; Yao, Luchi; Ding, Feng; Zou, Jin; Goorsky, Mark S.; Lake, Roger K.; Zurbuchen, Mark A.; Wang, Kang L.

    2015-09-01

    A novel heteroepitaxial growth technique, quasi-van der Waals epitaxy, promises the ability to deposit three-dimensional GaAs materials on silicon using two-dimensional graphene as a buffer layer by overcoming the lattice and thermal expansion mismatch. In this study, density functional theory (DFT) simulations were performed to understand the interactions at the GaAs/graphene hetero-interface as well as the growth orientations of GaAs on graphene. To develop a better understanding of the molecular beam epitaxy-grown GaAs films on graphene, samples were characterized by x-ray diffraction (..theta..-2..theta.. scan, ..omega..-scan, grazing incidence XRD and pole figure measurement) and transmission electron microscopy. The realizations of smooth GaAs films with a strong (111) oriented fiber-texture on graphene/silicon using this deposition technique are a milestone towards an eventual demonstration of the epitaxial growth of GaAs on silicon, which is necessary for integrated photonics application.

  4. Graphene and Graphene Metamaterials for Terahertz Absorbers

    DEFF Research Database (Denmark)

    Andryieuski, Andrei; Pizzocchero, Filippo; Booth, Tim

    2013-01-01

    Graphene, due to the possibility to tune its conductivity, is the promising material for a range of the terahertz (THz) applications, such as tunable reflectors, absorbers, modulators, filters and polarization converters. Subwavelength structuring of graphene in order to form metamaterials allows...... for even more control over the THz waves. In this poster presentation I will show an elegant way to describe the graphene metamaterials and the design of graphene based absorbers. I will also present our recent experimental results on the graphene absorbers characterization....

  5. Evaluating Graphene as a Channel Material in Spintronic Logic Devices

    Science.gov (United States)

    Anugrah, Yoska

    Spintronics, a class of devices that exploit the spin properties of electrons in addition to the charge properties, promises the possibility for nonvolatile logic and memory devices that operate at low power. Graphene is a material in which the spin orientation of electrons can be conserved over a long distance, which makes it an attractive channel material in spintronics devices. In this dissertation, the properties of graphene that are interesting for spintronics applications are explored. A robust fabrication process is described for graphene spin valves using Al2O3 tunnel tunnel barriers and Co ferromagnetic contacts. Spin transport was characterized in both few-layer exfoliated and single-layer graphene, and spin diffusion lengths and spin relaxation times were extracted using the nonlocal spin valve geometry and Hanle measurements. The effect of input-output asymmetry on the spin transport was investigated. The effect of an applied drift electric field on spin transport was investigated and the spin diffusion length was found to be tunable by a factor of 8X (suppressed to 1.6 microm and enhanced to 13 microm from the intrinsic length of 4.6 microm using electric field of +/-1800 V/cm). A mechanism to induce asymmetry without excess power dissipation is also described which utilizes a double buried-gate structure to tune the Fermi levels on the input and output sides of a graphene spin logic device independently. It was found that different spin scattering mechanisms were at play in the two halves of a small graphene strip. This suggests that the spin properties of graphene are strongly affected by its local environment, e.g. impurities, surface topography, defects. Finally, two-dimensional materials beyond graphene have been explored as spin channels. One such material is phosphorene, which has low spin-orbit coupling and high mobility, and the interface properties of ferromagnets (cobalt and permalloy) with this material were explored. This work could

  6. Photoenhanced atomic layer epitaxy. Hikari reiki genshiso epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Mashita, M.; Kawakyu, Y. (Toshiba corp., Tokyo (Japan))

    1991-10-01

    The growth temperature range was greatly expanded of atomic layer epitaxy (ALE) expected as the growth process of ultra-thin stacks. Ga layers and As layers were formed one after the other on a GaAs substrate in the atmosphere of trimethylgallium (TMG) or AsH{sub 2} supplied alternately, by KrF excimer laser irradiation normal to the substrate. As a result, the growth temperature range was 460-540{degree}C nearly 10 times that of 500 {plus minus} several degrees centigrade in conventional thermal growth method. Based on the experimental result where light absorption of source molecules adsorbed on a substrate surface was larger than that under gaseous phase condition, new adsorbed layer enhancement model was proposed to explain above irradiation effect verifying it by experiments. As this photoenhancement technique is applied to other materials, possible fabrication of new crystal structures as a super lattice with ultra-thin stacks of single atomic layers is expected because of a larger freedom in material combination for hetero-ALE. 11 refs., 7 figs.

  7. Electronic structure of transferred graphene/h-BN van der Waals heterostructures with nonzero stacking angles by nano-ARPES.

    Science.gov (United States)

    Wang, Eryin; Chen, Guorui; Wan, Guoliang; Lu, Xiaobo; Chen, Chaoyu; Avila, Jose; Fedorov, Alexei V; Zhang, Guangyu; Asensio, Maria C; Zhang, Yuanbo; Zhou, Shuyun

    2016-11-09

    In van der Waals heterostructures, the periodic potential from the Moiré superlattice can be used as a control knob to modulate the electronic structure of the constituent materials. Here we present a nanoscale angle-resolved photoemission spectroscopy (nano-ARPES) study of transferred graphene/h-BN heterostructures with two different stacking angles of 2.4° and 4.3° respectively. Our measurements reveal six replicas of graphene Dirac cones at the superlattice Brillouin zone (SBZ) centers. The size of the SBZ and its relative rotation angle to the graphene BZ are in good agreement with Moiré superlattice period extracted from atomic force microscopy (AFM) measurements. Comparison to the epitaxial graphene/h-BN with 0° stacking angles suggests that the interaction between graphene and h-BN decreases with increasing stacking angle.

  8. Optimising the visibility of graphene and graphene oxide on gold with multilayer heterostructures.

    Science.gov (United States)

    Velický, Matěj; Hendren, William R; Donnelly, Gavin Eugene; Katzen, Joel Michael; Bowman, Robert M; Huang, Fumin

    2018-04-17

    Metals have been increasingly used as substrates in devices based on two-dimensional (2D) materials. However, the high reflectivity of bulk metals results in low optical contrast (<3%) and therefore poor visibility of transparent mono- and few-layer 2D materials on these surfaces. Here we demonstrate that by engineering the complex reflectivity of a purpose-designed multilayer heterostructure composed of thin Au films (2 - 8 nm) on SiO2/Si substrate, the optical contrast of graphene and graphene oxide (GO) can be significantly enhanced in comparison to bulk Au, up to about 3 and 5 times, respectively. In particular, we achieved ~17% optical contrast for monolayer GO, which is even 2 times higher than that on bare SiO2/Si substrate. The experimental results are in good agreement with theoretical simulations. This concept is demonstrated for Au, but the methodology is applicable to other metals and can be adopted to design a variety of high-contrast metallic substrates. This will facilitate research and applications of 2D materials in areas such as plasmonics, photonics, catalysis and sensors. © 2018 IOP Publishing Ltd.

  9. Large band gap opening between graphene Dirac cones induced by Na adsorption onto an Ir superlattice.

    Science.gov (United States)

    Papagno, Marco; Rusponi, Stefano; Sheverdyaeva, Polina Makarovna; Vlaic, Sergio; Etzkorn, Markus; Pacilé, Daniela; Moras, Paolo; Carbone, Carlo; Brune, Harald

    2012-01-24

    We investigate the effects of Na adsorption on the electronic structure of bare and Ir cluster superlattice-covered epitaxial graphene on Ir(111) using angle-resolved photoemission spectroscopy and scanning tunneling microscopy. At Na saturation coverage, a massive charge migration from sodium atoms to graphene raises the graphene Fermi level by ~1.4 eV relative to its neutrality point. We find that Na is adsorbed on top of the graphene layer, and when coadsorbed onto an Ir cluster superlattice, it results in the opening of a large band gap of Δ(Na/Ir/G) = 740 meV, comparable to the one of Ge and with preserved high group velocity of the charge carriers. © 2011 American Chemical Society

  10. Strong Plasmon Reflection at Nanometer-Size Gaps in Monolayer Graphene on SiC

    Science.gov (United States)

    Kuzmenko, Alexey B.; Chen, Jiaining; Nesterov, Maxim L.; Nikitin, Alexey Yu.; Thongrattanasiri, Sukosin; Alonso-Gonzalez, Pablo; Slipchenko, Tetiana M.; Speck, Florian; Ostler, Markus; Seyller, Thomas; Crassee, Iris; Koppens, Frank H. L.; Martin-Moreno, Luis; Garcia de Abajo, F. Javier; Hillenbrand, Rainer

    2014-03-01

    Tip-enhanced infrared near-field microscopy is used to study propagating plasmons in epitaxial quasi-free-standing monolayer graphene on silicon carbide. We observe that plasmons are strongly reflected at graphene gaps at the steps between the substrate terraces. For the step height of only 1.5 nm, which is two orders of magnitude smaller than the plasmon wavelength, the reflection signal reaches 20 percent of its value at graphene edges, and it approaches 0.5 for steps of 5 nm. We support this observation with extensive numerical simulations and give physical rationale for this intriguing phenomenon. Our work suggests that plasmon propagation in graphene-based circuits can be controlled using ultracompact nanostructures. J. Chen et al., Nano Lett., DOI: 10.1021/nl403622t (2013).

  11. Understanding the interaction between energetic ions and freestanding graphene towards practical 2D perforation

    Science.gov (United States)

    Buchheim, Jakob; Wyss, Roman M.; Shorubalko, Ivan; Park, Hyung Gyu

    2016-04-01

    We report experimentally and theoretically the behavior of freestanding graphene subjected to bombardment of energetic ions, investigating the capability of large-scale patterning of freestanding graphene with nanometer sized features by focused ion beam technology. A precise control over the He+ and Ga+ irradiation offered by focused ion beam techniques enables investigating the interaction of the energetic particles and graphene suspended with no support and allows determining sputter yields of the 2D lattice. We found a strong dependency of the 2D sputter yield on the species and kinetic energy of the incident ion beams. Freestanding graphene shows material semi-transparency to He+ at high energies (10-30 keV) allowing the passage of >97% He+ particles without creating destructive lattice vacancy. Large Ga+ ions (5-30 keV), in contrast, collide far more often with the graphene lattice to impart a significantly higher sputter yield of ~50%. Binary collision theory applied to monolayer and few-layer graphene can successfully elucidate this collision mechanism, in great agreement with experiments. Raman spectroscopy analysis corroborates the passage of a large fraction of He+ ions across graphene without much damaging the lattice whereas several colliding ions create single vacancy defects. Physical understanding of the interaction between energetic particles and suspended graphene can practically lead to reproducible and efficient pattern generation of unprecedentedly small features on 2D materials by design, manifested by our perforation of sub-5 nm pore arrays. This capability of nanometer-scale precision patterning of freestanding 2D lattices shows the practical applicability of focused ion beam technology to 2D material processing for device fabrication and integration.We report experimentally and theoretically the behavior of freestanding graphene subjected to bombardment of energetic ions, investigating the capability of large-scale patterning of

  12. Electrochemical Exfoliation of Graphite in Aqueous Sodium Halide Electrolytes toward Low Oxygen Content Graphene for Energy and Environmental Applications.

    Science.gov (United States)

    Munuera, J M; Paredes, J I; Enterría, M; Pagán, A; Villar-Rodil, S; Pereira, M F R; Martins, J I; Figueiredo, J L; Cenis, J L; Martínez-Alonso, A; Tascón, J M D

    2017-07-19

    Graphene and graphene-based materials have shown great promise in many technological applications, but their large-scale production and processing by simple and cost-effective means still constitute significant issues in the path of their widespread implementation. Here, we investigate a straightforward method for the preparation of a ready-to-use and low oxygen content graphene material that is based on electrochemical (anodic) delamination of graphite in aqueous medium with sodium halides as the electrolyte. Contrary to previous conflicting reports on the ability of halide anions to act as efficient exfoliating electrolytes in electrochemical graphene exfoliation, we show that proper choice of both graphite electrode (e.g., graphite foil) and sodium halide concentration readily leads to the generation of large quantities of single-/few-layer graphene nanosheets possessing a degree of oxidation (O/C ratio down to ∼0.06) lower than that typical of anodically exfoliated graphenes obtained with commonly used electrolytes. The halide anions are thought to play a role in mitigating the oxidation of the graphene lattice during exfoliation, which is also discussed and rationalized. The as-exfoliated graphene materials exhibited a three-dimensional morphology that was suitable for their practical use without the need to resort to any kind of postproduction processing. When tested as dye adsorbents, they outperformed many previously reported graphene-based materials (e.g., they adsorbed ∼920 mg g -1 for methyl orange) and were useful sorbents for oils and nonpolar organic solvents. Supercapacitor cells assembled directly from the as-exfoliated products delivered energy and power density values (up to 15.3 Wh kg -1 and 3220 W kg -1 , respectively) competitive with those of many other graphene-based devices but with the additional advantage of extreme simplicity of preparation.

  13. Nanotoxicity of graphene and graphene oxide.

    Science.gov (United States)

    Seabra, Amedea B; Paula, Amauri J; de Lima, Renata; Alves, Oswaldo L; Durán, Nelson

    2014-02-17

    Graphene and its derivatives are promising candidates for important biomedical applications because of their versatility. The prospective use of graphene-based materials in a biological context requires a detailed comprehension of the toxicity of these materials. Moreover, due to the expanding applications of nanotechnology, human and environmental exposures to graphene-based nanomaterials are likely to increase in the future. Because of the potential risk factors associated with the manufacture and use of graphene-related materials, the number of nanotoxicological studies of these compounds has been increasing rapidly in the past decade. These studies have researched the effects of the nanostructural/biological interactions on different organizational levels of the living system, from biomolecules to animals. This review discusses recent results based on in vitro and in vivo cytotoxicity and genotoxicity studies of graphene-related materials and critically examines the methodologies employed to evaluate their toxicities. The environmental impact from the manipulation and application of graphene materials is also reported and discussed. Finally, this review presents mechanistic aspects of graphene toxicity in biological systems. More detailed studies aiming to investigate the toxicity of graphene-based materials and to properly associate the biological phenomenon with their chemical, structural, and morphological variations that result from several synthetic and processing possibilities are needed. Knowledge about graphene-based materials could ensure the safe application of this versatile material. Consequently, the focus of this review is to provide a source of inspiration for new nanotoxicological approaches for graphene-based materials.

  14. Determining the Parameters of Importance of a Graphene Synthesis Process Using Design-of-Experiments Method

    Directory of Open Access Journals (Sweden)

    Udit Narula

    2016-07-01

    Full Text Available A systematic method to identify key factors that control the synthesis of Physical Vapor Deposition (PVD-based graphene on copper is necessary for engineering graphene growth. The statistical design-of-experiments method is employed and demonstrated in this work in order to fulfill the necessity. Full-factorial design-of-experiments are performed to examine the significance of the main effects and the extent of the interactions of the controlling factors, which are responsible for the number of layers and the quality of the grown graphene. We found that a thinner amorphous carbon layer and a higher annealing temperature are suitable for the growth of mono-layer/few-layer graphene with low defects, while the effect of annealing time has a trade-off and needs to be optimized further. On the other hand, the same treatment, but with larger annealing times will result in multi-layer graphene and low defects. The results obtained from the analysis of the design-of-experiments are verified experimentally with Raman characterization.

  15. X-ray photoelectron spectroscopy for identification of morphological defects and disorders in graphene devices

    Energy Technology Data Exchange (ETDEWEB)

    Aydogan, Pinar; Suzer, Sefik, E-mail: suzer@fen.bilkent.edu.tr [Department of Chemistry, Bilkent University, 06800 Ankara (Turkey); Polat, Emre O.; Kocabas, Coskun [Department of Physics, Bilkent University, 06800 Ankara (Turkey)

    2016-07-15

    The progress in the development of graphene devices is promising, and they are now considered as an option for the current Si-based electronics. However, the structural defects in graphene may strongly influence the local electronic and mechanical characteristics. Although there are well-established analytical characterization methods to analyze the chemical and physical parameters of this material, they remain incapable of fully understanding of the morphological disorders. In this study, x-ray photoelectron spectroscopy (XPS) with an external voltage bias across the sample is used for the characterization of morphological defects in large area of a few layers graphene in a chemically specific fashion. For the XPS measurements, an external +6 V bias applied between the two electrodes and areal analysis for three different elements, C1s, O1s, and Au4f, were performed. By monitoring the variations of the binding energy, the authors extract the voltage variations in the graphene layer which reveal information about the structural defects, cracks, impurities, and oxidation levels in graphene layer which are created purposely or not. Raman spectroscopy was also utilized to confirm some of the findings. This methodology the authors offer is simple but provides promising chemically specific electrical and morphological information.

  16. Controlled synthesis of graphene sheets with tunable sizes by hydrothermal cutting

    International Nuclear Information System (INIS)

    Ma Chen; Chen Zhongxin; Fang Ming; Lu Hongbin

    2012-01-01

    We report a hydrothermal method that directly reduces graphene oxide (GO) into graphene nanosheets (GNs) with different sizes. In the presence of NaOH and hydrazine, the hydrothermal reaction at 80 °C resulted in the formation of GNs with a lateral size of ∼1 μm but the size of GNs decreased to ∼300 and ∼100 nm upon increasing the reaction temperature to 150 and 200 °C, respectively. The morphology of the resulting GNs was observed by atomic force microscopy and transmission electron microscopy. The thickness of GNs is basically <3 nm, indicates the GNs stack together in a few-layer manner. XRD, XPS, FTIR, and Raman spectroscopy were used to characterize the structural changes before and after reduction. The results suggested that the defect stability in GO and reduced GNs could be responsible for the temperature dependence of the size of reduced GNs.Graphical AbstractA hydrothermal method is proposed to simultaneously reduce and cut graphene oxide into graphene sheets with different sizes in a controlled manner, in which the reaction temperature as a critical parameter is used to control the size of resulting graphene sheets.

  17. In Situ Electronic Characterization of Graphene Nanoconstrictions Fabricated in a Transmission Electron Microscope

    Science.gov (United States)

    Lu, Ye; Merchant, Christopher; Drndic, Marija; Johnson, A. T. Charlie

    2012-02-01

    We report electronic measurements on high quality graphene nanoconstrictions (GNCs) fabricated in a transmission electron microscope (TEM), and the first measurements on GNC conductance with an accurate measurement of constriction width down to 1 nm. To create the GNCs, freely suspended graphene ribbons were fabricated using few-layer graphene grown by chemical vapor deposition. The ribbons were loaded into the TEM, and a current-annealing procedure was used to clean the material and improve its electronic characteristics. The TEM beam was then used to sculpt GNCs to a series of desired widths in the range 1-700 nm; after each sculpting step, the sample was imaged by TEM and its electronic properties were measured in situ. GNC conductance was found to be remarkably high, comparable to that of exfoliated graphene samples of similar size. The GNC conductance varied with width approximately as G(w) = (e^2/h)w^0.75, where w is the constriction width in nanometers. GNCs support current densities greater than 120 μA/nm^2, 2 orders of magnitude higher than that which has been previously reported for graphene nanoribbons and 2000 times higher than that reported for copper.

  18. Crumpled Nitrogen-Doped Graphene for Supercapacitors with High Gravimetric and Volumetric Performances.

    Science.gov (United States)

    Wang, Jie; Ding, Bing; Xu, Yunling; Shen, Laifa; Dou, Hui; Zhang, Xiaogang

    2015-10-14

    Graphene is considered a promising electrochemical capacitors electrode material due to its high surface area and high electrical conductivity. However, restacking interactions between graphene nanosheets significantly decrease the ion-accessible surface area and impede electronic and ionic transfer. This would, in turn, severely hinder the realization of high energy density. Herein, we report a strategy for preparation of few-layer graphene material with abundant crumples and high-level nitrogen doping. The two-dimensional graphene nanosheets (CNG) feature high ion-available surface area, excellent electronic and ion transfer properties, and high packing density, permitting the CNG electrode to exhibit excellent electrochemical performance. In ionic liquid electrolyte, the CNG electrode exhibits gravimetric and volumetric capacitances of 128 F g(-1) and 98 F cm(-3), respectively, achieving gravimetric and volumetric energy densities of 56 Wh kg(-1) and 43 Wh L(-1). The preparation strategy described here provides a new approach for developing a graphene-based supercapacitor with high gravimetric and volumetric energy densities.

  19. Multiscale investigation of graphene layers on 6H-SiC(000-1

    Directory of Open Access Journals (Sweden)

    Hiebel Fanny

    2011-01-01

    Full Text Available Abstract In this article, a multiscale investigation of few graphene layers grown on 6H-SiC(000-1 under ultrahigh vacuum (UHV conditions is presented. At 100-μm scale, the authors show that the UHV growth yields few layer graphene (FLG with an average thickness given by Auger spectroscopy between 1 and 2 graphene planes. At the same scale, electron diffraction reveals a significant rotational disorder between the first graphene layer and the SiC surface, although well-defined preferred orientations exist. This is confirmed at the nanometer scale by scanning tunneling microscopy (STM. Finally, STM (at the nm scale and Raman spectroscopy (at the μm scale show that the FLG stacking is turbostratic, and that the domain size of the crystallites ranges from 10 to 100 nm. The most striking result is that the FLGs experience a strong compressive stress that is seldom observed for graphene grown on the C face of SiC substrates.

  20. A piezo-resistive graphene strain sensor with a hollow cylindrical geometry

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, Atsushi, E-mail: nakamura.atsushi@ipc.shizuoka.ac.jp [Graduate School of Integrated Science and Technology, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8011 (Japan); Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8011 (Japan); Hamanishi, Toshiki [Graduate School of Integrated Science and Technology, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8011 (Japan); Kawakami, Shotaro [Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8011 (Japan); Takeda, Masanori [Graduate School of Integrated Science and Technology, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8011 (Japan); Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8011 (Japan)

    2017-05-15

    Highlights: • A hollow tubing graphene fiber was synthesized from CVD-grown graphene on Ni wire. • The strain sensor showed the gauge factor 34.3–48.9 at 8% tensile strain. • The TGF sensors performed a writing finger motion assessment. - Abstract: We propose a resistance-type strain sensor consists of hollow tubing graphene fibers (TGFs) with dimethylpolysiloxane (PDMS) coating for millimeters-scale strain/bending detection applications. The TGFs were synthesized via graphene films grown on Ni wire by chemical vapor deposition (CVD). The TGFs are fundamentally folded continuous few-layered graphene films without edges maintained cylindrical tube supported by PDMS coating. Sensing properties were studied comparing with a multi-wall carbon nanotube (MWCNT)/PDMS composites (CNTCs) and the mechanism were discussed. In terms of the gauge factor, the sensor made of TGF is estimated to be in the range of 34.3–48.9 against 8% tensile strain. For a feasibility study, we demonstrate the human finger monitoring by means of bending angle detection on a finger joint.

  1. The effect of graphite sources on preparation of Photoluminescent graphene nano-sheets for biomedical imaging

    Directory of Open Access Journals (Sweden)

    Soroush Moasses Ghafary

    2017-07-01

    Full Text Available Objective(s: Graphene as two-dimensional (2D materials have attracted wide attention in different fields such as biomedical imaging. Ultra-small graphene nano-sheets (UGNSs have been designated as low dimensional graphene sheets with lateral dimensions less than few nanometres (≤ 500 nm in one, two or few layers. Several studies have proven that the process of acidic exfoliation and oxidation is one of the most effective methods to synthesize low dimensional graphene sheets. The band gap of graphene can be changed through changing the reaction temperature resulting in different photoluminescent colors. The aim of our study is synthesis of multi-color photoluminescent UGNSs for biomedical imaging.Materials and Methods: Two different UGNSs were synthesized from two different graphite sources via acidic treatment with a mixture of sulfuric and nitric acids. The prepared UGNSs were characterized by UV-Vis, photoluminescent, Raman spectroscopy and scanning electron microscopy (SEM. The photoluminescence colors of the prepared UGNSs were detected under excitation wavelength of 470 nm using optical filters.Results: The results showed that the graphite primary source is a determinant factor in the synthesis of different UGNSs. While altering reaction temperature didn't significantly change the emission wavelengths; however it affected their photoluminescent emission intensity.Conclusion: Overall, nontoxic UGNSs synthesized by simple acidic treatment of graphite with different photoluminescent colors (green, yellow and red can be a promising fluorescent probe for bioimaging.

  2. Tuning metal–graphene interaction by non-metal intercalation: a case study of the graphene/oxygen/Ni (1 1 1) system

    International Nuclear Information System (INIS)

    Zhang, Wei-Bing; Chen, Chuan

    2015-01-01

    Epitaxial growth of graphene on transition metal surfaces has been proposed as one of the most promising methods for large-scale preparation of high-quality graphene. However, the presence of the substrate could significantly affect the intrinsic electronic structure of graphene and intercalation of metals is an established route for decoupling the graphene from the substrate. Taking a graphene/Ni(1 1 1) surface as an example, we suggest reactive oxygen as an effective intercalation element to recover the linear dispersion of graphene based on density functional theory calculation, in which vdW interactions are treated using the optB88-vdW functional. The possible intercalation configurations at different coverage are considered and the geometry and electronic structure are analyzed in detail. Our results indicate that the energy favorable structures change from top-fcc to bridge-top configuration after oxygen intercalation and the binding between the graphene and the O/Ni(1 1 1) substrate becomes stronger at high oxygen coverage even than pure Ni(1 1 1) substrate. Most interestingly, the electronic structure of pristine graphene is found to be almost restored, especially for the bridge-top configuration after oxygen intercalation, and the Dirac points move towards the high energy region relative to the Fermi level. A graphene/oxygen/Ni (1 1 1) system is thus suggested as a p-type doped strongly bound Dirac system. Detailed analysis using projected energy band and differential charge density indicates that the intercalated oxygen atoms react with the Ni (1 1 1) surface strongly, which not only blocks the strong interaction between Ni and graphene but also passivates oxygen 2p states. The intercalation mechanisms distinguished from the conventional metal intercalation will be useful to understand other complex intercalation systems. (paper)

  3. Physical origin of satellites in photoemission of doped graphene: an ab initio GW plus cumulant study.

    Science.gov (United States)

    Lischner, Johannes; Vigil-Fowler, Derek; Louie, Steven G

    2013-04-05

    We calculate the photoemission spectra of suspended and epitaxial doped graphene using an ab initio cumulant expansion of the Green's function based on the GW self-energy. Our results are compared to experiment and to standard GW calculations. For doped graphene on a silicon carbide substrate, we find, in contrast to earlier calculations, that the spectral function from GW only does not reproduce experimental satellite properties. However, ab initio GW plus cumulant theory combined with an accurate description of the substrate screening results in good agreement with experiment, but gives no plasmaron (i.e., no extra well-defined excitation satisfying Dyson's equation).

  4. Versatile and Tunable Transparent Conducting Electrodes Based on Doped Graphene

    KAUST Repository

    Mansour, Ahmed E.

    2016-11-25

    The continued growth of the optoelectronics industry and the emergence of wearable and flexible electronics will continue to place an ever increasing pressure on replacing ITO, the most widely used transparent conducting electrode (TCE). Among the various candidates, graphene shows the highest optical transmittance in addition to promising electrical transport properties. The currently available large-scale synthesis routes of graphene result in polycrystalline samples rife with grain boundaries and other defects which limit its transport properties. Chemical doping of graphene is a viable route towards increasing its conductivity and tuning its work function. However, dopants are typically present at the surface of the graphene sheet, making them highly susceptible to degradation in environmental conditions. Few-layers graphene (FLG) is a more resilient form of graphene exhibiting higher conductivity and performance stability under stretching and bending as contrasted to single-layer graphene. In addition FLG presents the advantage of being amenable bulk doping by intercalation. Herein, we explore non-covalent doping routes of CVD FLG, such as surface doping, intercalation and combination thereof, through in-depth and systematic characterization of the electrical transport properties and energy levels shifts. The intercalation of FLG with Br2 and FeCl3 is demonstrated, showing the highest improvements of the figure of merit of TCEs of any doping scheme, which results from up to a five-fold increase in conductivity while maintaining the transmittance within 3% of that for the pristine value. Importantly the intercalation yields TCEs that are air-stable, due to encapsulation of the intercalant in the bulk of FLG. Surface doping with novel solution-processed metal-organic molecular species (n- and p-type) is demonstrated with an unprecedented range of work function modulation, resulting from electron transfer and the formation of molecular surface dipoles. However

  5. Efficient Nitrogen Doping of Single-Layer Graphene Accompanied by Negligible Defect Generation for Integration into Hybrid Semiconductor Heterostructures.

    Science.gov (United States)

    Sarau, George; Heilmann, Martin; Bashouti, Muhammad; Latzel, Michael; Tessarek, Christian; Christiansen, Silke

    2017-03-22

    While doping enables application-specific tailoring of graphene properties, it can also produce high defect densities that degrade the beneficial features. In this work, we report efficient nitrogen doping of ∼11 atom % without virtually inducing new structural defects in the initial, large-area, low defect, and transferred single-layer graphene. To shed light on this remarkable high-doping-low-disorder relationship, a unique experimental strategy consisting of analyzing the changes in doping, strain, and defect density after each important step during the doping procedure was employed. Complementary micro-Raman mapping, X-ray photoelectron spectroscopy, and optical microscopy revealed that effective cleaning of the graphene surface assists efficient nitrogen incorporation accompanied by mild compressive strain resulting in negligible defect formation in the doped graphene lattice. These original results are achieved by separating the growth of graphene from its doping. Moreover, the high doping level occurred simultaneously with the epitaxial growth of n-GaN micro- and nanorods on top of graphene, leading to the flow of higher currents through the graphene/n-GaN rod interface. Our approach can be extended toward integrating graphene into other technologically relevant hybrid semiconductor heterostructures and obtaining an ohmic contact at their interfaces by adjusting the doping level in graphene.

  6. Atomically thin heterostructures based on single-layer tungsten diselenide and graphene.

    Science.gov (United States)

    Lin, Yu-Chuan; Chang, Chih-Yuan S; Ghosh, Ram Krishna; Li, Jie; Zhu, Hui; Addou, Rafik; Diaconescu, Bogdan; Ohta, Taisuke; Peng, Xin; Lu, Ning; Kim, Moon J; Robinson, Jeremy T; Wallace, Robert M; Mayer, Theresa S; Datta, Suman; Li, Lain-Jong; Robinson, Joshua A

    2014-12-10

    Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. In order to engineer pristine layers and their interfaces, epitaxial growth of such heterostructures is required. We report the direct growth of crystalline, monolayer tungsten diselenide (WSe2) on epitaxial graphene (EG) grown from silicon carbide. Raman spectroscopy, photoluminescence, and scanning tunneling microscopy confirm high-quality WSe2 monolayers, whereas transmission electron microscopy shows an atomically sharp interface, and low energy electron diffraction confirms near perfect orientation between WSe2 and EG. Vertical transport measurements across the WSe2/EG heterostructure provides evidence that an additional barrier to carrier transport beyond the expected WSe2/EG band offset exists due to the interlayer gap, which is supported by theoretical local density of states (LDOS) calculations using self-consistent density functional theory (DFT) and nonequilibrium Green's function (NEGF).

  7. Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene

    KAUST Repository

    Lin, Yu-Chuan

    2014-11-10

    Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. In order to engineer pristine layers and their interfaces, epitaxial growth of such heterostructures is required. We report the direct growth of crystalline, monolayer tungsten diselenide (WSe2) on epitaxial graphene (EG) grown from silicon carbide. Raman spectroscopy, photoluminescence, and scanning tunneling microscopy confirm high-quality WSe2 monolayers, whereas transmission electron microscopy shows an atomically sharp interface, and low energy electron diffraction confirms near perfect orientation between WSe2 and EG. Vertical transport measurements across the WSe2/EG heterostructure provides evidence that an additional barrier to carrier transport beyond the expected WSe2/EG band offset exists due to the interlayer gap, which is supported by theoretical local density of states (LDOS) calculations using self-consistent density functional theory (DFT) and nonequilibrium Green\\'s function (NEGF).

  8. Effect of thermal treatment on production of graphene from graphite via exfoliation in organic solvent (acetonitrile)

    International Nuclear Information System (INIS)

    Nawaz, K.; Ayub, M.; Hussain, A.; Malik, A.Q.; Niazi, M. B. K.; Khan, A. U.; Haq, N. U.

    2016-01-01

    Graphite flakes were divided into two equal parts Part A and Part B. Part A was thermally shocked at 800 degree C under inert atmosphere of argon for two min before exfoliation under sonic tip while Part B was exfoliated as such using acetonitrile (ACN) as exfoliating media in both cases at 15-20 degree C. The concentration of the graphene as a result of exfoliation and centrifugation at 500 rpm for 45 min in both cases were determined. After ten hours of sonication the concentration of graphene in Part A is >12mg/ml with few layered thickness while that of Part B was <5mg/ml consisting of more layers than Part A. UV spectroscopy, Raman, Transmission Electron Microscopy and Scanning Electron Microscopy (SEM) were used for the study of these nanoflakes. (author)

  9. Mild sonochemical exfoliation of bromine-intercalated graphite: a new route towards graphene

    Energy Technology Data Exchange (ETDEWEB)

    Widenkvist, E; Lu, J; Jansson, U [Department of Materials Chemistry, Uppsala University, BOX 538, SE-752 21 Uppsala (Sweden); Boukhvalov, D W; Katsnelson, M I [Institute for Molecules and Materials, Radboud University of Nijmegen, 6525 ED Nijmegen (Netherlands); Rubino, S; Akhtar, S; Leifer, K [Department of Engineering Sciences, Division for Electron Microscopy and Nanoengineering, Uppsala University BOX 534, SE-752 21 Uppsala (Sweden); Quinlan, R A [Department of Applied Science, The College of William and Mary, 325 McGlothin Street Hall, Williamsburg, VA 23187 (United States); Grennberg, H [Department of Biochemistry and Organic Chemistry Uppsala University, BOX 576, SE- 751 23 Uppsala (Sweden)], E-mail: ulf.jansson@mkem.uu.se

    2009-06-07

    A method to produce suspensions of graphene sheets by combining solution-based bromine intercalation and mild sonochemical exfoliation is presented. Ultrasonic treatment of graphite in water leads to the formation of suspensions of graphite flakes. The delamination is dramatically improved by intercalation of bromine into the graphite before sonication. The bromine intercalation was verified by Raman spectroscopy as well as by x-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations show an almost ten times lower interlayer binding energy after introducing Br{sub 2} into the graphite. Analysis of the suspended material by transmission and scanning electron microscopy (TEM and SEM) revealed a significant content of few-layer graphene with sizes up to 30 {mu}m, corresponding to the grain size of the starting material. (fast track communication)

  10. Bound state properties of ABC-stacked trilayer graphene quantum dots

    Science.gov (United States)

    Xiong, Haonan; Jiang, Wentao; Song, Yipu; Duan, Luming

    2017-06-01

    The few-layer graphene quantum dot provides a promising platform for quantum computing with both spin and valley degrees of freedom. Gate-defined quantum dots in particular can avoid noise from edge disorders. In connection with the recent experimental efforts (Song et al 2016 Nano Lett. 16 6245), we investigate the bound state properties of trilayer graphene (TLG) quantum dots (QDs) through numerical simulations. We show that the valley degeneracy can be lifted by breaking the time reversal symmetry through the application of a perpendicular magnetic field. The spectrum under such a potential exhibits a transition from one group of Landau levels to another group, which can be understood analytically through perturbation theory. Our results provide insight into the transport property of TLG QDs, with possible applications to study of spin qubits and valleytronics in TLG QDs.

  11. Materials fundamentals of molecular beam epitaxy

    CERN Document Server

    Tsao, Jeffrey Y

    1992-01-01

    The technology of crystal growth has advanced enormously during the past two decades. Among, these advances, the development and refinement of molecular beam epitaxy (MBE) has been among the msot important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today they form the basis for the most advanced device structures in solid-state physics, electronics, and optoelectronics. As an example, Figure 0.1 shows a vertical-cavity surface emitting laser structure grown by MBE. * Provides comprehensive treatment of the basic materials and surface science principles that apply to molecular beam epitaxy * Thorough enough to benefit molecular beam epitaxy researchers * Broad enough to benefit materials, surface, and device researchers * Referenes articles at the forefront of modern research as well as those of historical interest.

  12. Short-pulse chemical beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Suian; Cui, Jie; Aoyagi, Yoshinobu (RIKEN, The Institute of Physical and Chemical Research, Saitama (Japan)); Tanaka, Akihiko (Bentec Co., Tokyo (Japan))

    1994-03-10

    Short-pulse chemical beam epitaxy has been proposed and studied. The short pulses with supersonic characteristics and a width of milliseconds were generated by high speed valves and the related pumping lines on a purpose-built CBE system. Using a time-of-fight technique, we verified the dependence of pulse properties on the source pressures and the valve on-time. The results indicate that modulation of molecular kinetic energy and accurate control of molecule supply were obtained. GaAs epitaxial growth with use of trimethylgallium pulses was carried out and investigated by means of RHEED (reflection high-energy electron diffraction) observation. It was demonstrated that the newly developed short-pulse chemical beam epitaxy has the advantage of high controllability

  13. Soft Crystals in Flatland: Unraveling Epitaxial Growth.

    Science.gov (United States)

    Ward, Michael D

    2016-07-26

    Thin film epitaxy typically invokes a superposition of a pair of rigid two-dimensional lattices with a well-defined orientation governed by some form of commensurism. A report by Meissner et al. in this issue of ACS Nano demonstrates that the organization of organic molecules on substrates may not be that simple, as static distortion waves involving miniscule shifts of atomic positions from substrate lattice points can lead to orientations of a molecular film that cannot be described by often used models. Herein, we provide some highlights of epitaxy, with a focus on configurations that reflect the delicate balance between intermolecular interactions within a molecular film and molecule-substrate interactions. Although geometric models for explaining and predicting epitaxial configurations can be used to guide synthesis of materials, their use must recognize energetic factors and the possibility of more complex, and possibly less predictable, interface structures.

  14. Extrinsic morphology of graphene

    International Nuclear Information System (INIS)

    Li, Teng

    2011-01-01

    Graphene is intrinsically non-flat and corrugates randomly. Since the corrugating physics of atomically thin graphene is strongly tied to its electronics properties, randomly corrugating morphology of graphene poses a significant challenge to its application in nanoelectronic devices for which precise (digital) control is the key. Recent studies revealed that the morphology of substrate-supported graphene is regulated by the graphene–substrate interaction, thus is distinct from the random intrinsic morphology of freestanding graphene. The regulated extrinsic morphology of graphene sheds light on new pathways to fine tune the properties of graphene. To guide further research to explore these fertile opportunities, this paper reviews recent progress on modeling and experimental studies of the extrinsic morphology of graphene under a wide range of external regulation, including two-dimensional and one-dimensional substrate surface features and one-dimensional and zero-dimensional nanoscale scaffolds (e.g. nanowires and nanoparticles)

  15. Graphene for Space

    Data.gov (United States)

    National Aeronautics and Space Administration — Individual talks by JPL and Caltech experts on graphene to present the different ambits of application in which graphene is currently being used on campus,...

  16. Graphene Chemical Sensor Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The sensor uses graphene based devices to sense the surface potential of a graphene channel exposed to an analyte. When analyte molecules adsorb onto the...

  17. ELECTRON DIFFRACTION STUDY OF GRAPHENE LAYERS STRUCTURE ON CONDUCTIVE AND SEMI-INSULATING 6H-SIC (0001 SUBSTRATES

    Directory of Open Access Journals (Sweden)

    I. S. Kotousova

    2015-03-01

    Full Text Available Subject of study. Findings for the surface structure of conductive and semi-insulating substrates 6H-SiC(0001 and epitaxial graphene layers grown on them are presented. Materials and methods. We used two types of silicon carbide substrates of 6H polytype as a substrate: conductive (with resistivity less than 103 Ohm·cm, and semi-insulating (with resistivity greater than 105 Ohm·cm. Synthesis of graphene layers on substrates was carried out by thermal decomposition of SiC surface at the temperature of 1350ºC for 20 minutes in a vacuum sublimation epitaxy setup. Registration of high-energy electron diffraction (RHEED patterns for reflection was carried out using two devices: electronograph EMR-102 at an accelerating voltage of 75 kV and electron diffractometer, built into the unit MBE Compact 21T (Riber France, at an accelerating voltage of 30 kV. Main results. The oriented growth of graphene is observed on the conductive substrate. Both oriented and disordered kinds of graphene grow on the semi-insulating substrate due to the partially formation of the polycrystalline component in the multilayered graphene film which in turn is caused by the lower perfection structure of the semi-insulating substrate surface as compared to the conductive one. Practical significance. Proposed findings will help to understand the quality dependence of the grown graphene film on the structure of the used silicon carbide substrate.

  18. Nitrogen-doped graphene sheets grown by chemical vapor deposition: synthesis and influence of nitrogen impurities on carrier transport.

    Science.gov (United States)

    Lu, Yu-Fen; Lo, Shun-Tsung; Lin, Jheng-Cyuan; Zhang, Wenjing; Lu, Jing-Yu; Liu, Fan-Hung; Tseng, Chuan-Ming; Lee, Yi-Hsien; Liang, Chi-Te; Li, Lain-Jong

    2013-08-27

    A significant advance toward achieving practical applications of graphene as a two-dimensional material in nanoelectronics would be provided by successful synthesis of both n-type and p-type doped graphene. However, reliable doping and a thorough understanding of carrier transport in the presence of charged impurities governed by ionized donors or acceptors in the graphene lattice are still lacking. Here we report experimental realization of few-layer nitrogen-doped (N-doped) graphene sheets by chemical vapor deposition of organic molecule 1,3,5-triazine on Cu metal catalyst. When reducing the growth temperature, the atomic percentage of nitrogen doping is raised from 2.1% to 5.6%. With increasing doping concentration, N-doped graphene sheet exhibits a crossover from p-type to n-type behavior accompanied by a strong enhancement of electron-hole transport asymmetry, manifesting the influence of incorporated nitrogen impurities. In addition, by analyzing the data of X-ray photoelectron spectroscopy, Raman spectroscopy, and electrical measurements, we show that pyridinic and pyrrolic N impurities play an important role in determining the transport behavior of carriers in our N-doped graphene sheets.

  19. Preparation of Graphene Sheets by Electrochemical Exfoliation of Graphite in Confined Space and Their Application in Transparent Conductive Films.

    Science.gov (United States)

    Wang, Hui; Wei, Can; Zhu, Kaiyi; Zhang, Yu; Gong, Chunhong; Guo, Jianhui; Zhang, Jiwei; Yu, Laigui; Zhang, Jingwei

    2017-10-04

    A novel electrochemical exfoliation mode was established to prepare graphene sheets efficiently with potential applications in transparent conductive films. The graphite electrode was coated with paraffin to keep the electrochemical exfoliation in confined space in the presence of concentrated sodium hydroxide as the electrolyte, yielding ∼100% low-defect (the D band to G band intensity ratio, I D /I G = 0.26) graphene sheets. Furthermore, ozone was first detected with ozone test strips, and the effect of ozone on the exfoliation of graphite foil and the microstructure of the as-prepared graphene sheets was investigated. Findings indicate that upon applying a low voltage (3 V) on the graphite foil partially coated with paraffin wax that the coating can prevent the insufficiently intercalated graphite sheets from prematurely peeling off from the graphite electrode thereby affording few-layer (graphene sheets in a yield of as much as 60%. Besides, the ozone generated during the electrochemical exfoliation process plays a crucial role in the exfoliation of graphite, and the amount of defect in the as-prepared graphene sheets is dependent on electrolytic potential and electrode distance. Moreover, the graphene-based transparent conductive films prepared by simple modified vacuum filtration exhibit an excellent transparency and a low sheet resistance after being treated with NH 4 NO 3 and annealing (∼1.21 kΩ/□ at ∼72.4% transmittance).

  20. Investigation of the capacitive performance of tobacco solution reduced graphene oxide

    Energy Technology Data Exchange (ETDEWEB)

    Jana, Milan [Surface Engineering and Tribology Division, Council of Scientific and Industrial Research – Central Mechanical Engineering Research Institute, Durgapur 713209 (India); Academy of Scientific and Innovative Research (AcSIR), Anusandhan Bhawan, 2 Rafi Marg, New Delhi 110001 (India); Saha, Sanjit; Samanta, Pranab; Murmu, Naresh Chandra [Surface Engineering and Tribology Division, Council of Scientific and Industrial Research – Central Mechanical Engineering Research Institute, Durgapur 713209 (India); Lee, Joong Hee, E-mail: jhl@jbnu.ac.kr [Advanced Materials Research Institute for BIN Fusion Technology (BK Plus Global, Program), Department of BIN Fusion Technology, Chonbuk National University, Jeonju, Jeonbuk 561-756 (Korea, Republic of); Kuila, Tapas, E-mail: tkuila@gmail.com [Surface Engineering and Tribology Division, Council of Scientific and Industrial Research – Central Mechanical Engineering Research Institute, Durgapur 713209 (India)

    2015-02-01

    A facile and green approach for the reduction of graphene oxide (GO) using tobacco leaves solution was reported. The benefits of this approach were the use of green and cheap reducing agent as compared to the commercially available toxic and hazardous chemicals. Moreover, the purification of reduced GO (rGO) sheets can be avoided by using naturally occurring reducing agents. The obtained rGO sheets were characterised by Ultra violet visible, Fourier transform infrared, Raman and X-ray photo electron spectroscopy analysis. The morphologies were recorded by transmission electron and field emission scanning electron microscopy analysis and these showed the formation of a few layer rGO sheets. The electrical conductivity of rGO was found to be ∼410 S m{sup −1} at room temperature. Electrochemical performances were characterised by cyclic voltammetry, charge–discharge and electrochemical impedance spectroscopy analysis. A two electrode symmetric supercapacitor device was designed using nickel foam as current collector. The specific capacitance of the two-electrode device reached to 206 F g{sup −1} at a current density of 0.16 A g{sup −1}. The retention in specific capacitance was found to be ∼112% after 1000 charge–discharge cycles. - Highlights: • Reduced graphene has been prepared by bio-reduction of graphene oxide. • Few layers of graphene has been synthesised as observed by Raman spectra. • Two electrode based supercapacitors are fabricated. • Highest specific capacitance is found to be 206 F g{sup −1}. • Retention in specific capacitance is 112% after 1000 charge–discharge cycles.

  1. Graphene-polymer composites

    Science.gov (United States)

    Carotenuto, G.; Romeo, V.; Cannavaro, I.; Roncato, D.; Martorana, B.; Gosso, M.

    2012-09-01

    Graphene is a novel nanostructured material that can be conveniently used as filler for thermoplastic polymers or thermosetting resins, and the resulting nanocomposite material has unique mechanical and chemical/physical properties. Industrial production of graphene/polymer materials requires the availability of a chemical route to produce massive amount of graphene. Natural graphite flakes can be the best starting material for a bulk-production of graphene to be used in the polymeric nanocomposite preparation.

  2. Graphene quantum dots

    CERN Document Server

    Güçlü, Alev Devrim; Korkusinski, Marek; Hawrylak, Pawel

    2014-01-01

    This book reflects the current status of theoretical and experimental research of graphene based nanostructures, in particular quantum dots, at a level accessible to young researchers, graduate students, experimentalists and theorists. It presents the current state of research of graphene quantum dots, a single or few monolayer thick islands of graphene. It introduces the reader to the electronic and optical properties of graphite, intercalated graphite and graphene, including Dirac fermions, Berry's phase associated with sublattices and valley degeneracy, covers single particle properties of

  3. Simulation of Graphene Mechanics

    NARCIS (Netherlands)

    Jain, S.K.

    2017-01-01

    Graphene is a one atom thick layer of carbon atoms arranged in hexagonal lattice in two-dimensions. The discovery of graphene has provoked a revolution in nanotechnology, as the structural, thermal, and electronic properties of graphene make it a very useful component for a large variety of devices.

  4. Novel graphene papers with sporadic alkyl brushes on the basal plane as a high-capacity flexible anode for lithium ion batteries

    International Nuclear Information System (INIS)

    Oh, Kyung Min; Cho, Sung-Woo; Kim, Gyeong-Ok; Ryu, Kwang-Sun; Jeong, Han Mo

    2014-01-01

    Graphene paper that exhibits an excellent stabilized capacity, as high as 1300 mAh g −1 at a current rate of 60 mA g −1 , as a lithium ion battery anode is fabricated and evaluated. The few-layer graphene used to make the graphene paper is prepared via the thermal reduction of graphite oxide. The graphene is then modified by a novel method utilizing inherent defects, namely epoxy groups, on the graphene as active sites for a reaction with methanol, 1-butanol, 1-hexanol, and 1-octanol. The density values and X-ray diffraction patterns obtained for the graphene paper demonstrate that the alkyl brushes on the graphene sheets expand the d-spacing and hinder close restacking of the sheets, thereby inducing the formation of extra cavities within the paper. This loose packing due to the alkyl brushes increases sensitively as the alkyl chain length of the alcohol becomes longer. The lithium ion insertion capacity of a graphene paper electrode at the first cycle also increases with the alkyl chain length. However, fading of the capacity at early charge/discharge cycles is accelerated by the modification process because of electrolyte penetration into the gallery and the acceleration of protective solid electrolyte interface film formation due to looser packing. The paper composed of graphene modified with 1-butanol rather than shorter or longer alcohols exhibits the best reversible storage capacity, more than two-fold higher when compared to that of pristine graphene paper, due to a compromise between two conflicting effects on the reversible storage capacity by long alkyl brushes. The tensile properties and electrical conductivity of the graphene papers are also examined

  5. Immediate fabrication of flower-like graphene oxide by ion beam bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Junjie [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China); Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Zhang, Yuanyuan; Zhang, Guilong [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China); University of Science and Technology of China, Hefei 230026 (China); Xiong, Shiquan [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China); Pei, Renjun, E-mail: rjpei2011@sinano.ac.cn [Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Cai, Dongqing, E-mail: dqcai@ipp.ac.cn [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China); Wu, Zhengyan, E-mail: zywu@ipp.ac.cn [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China)

    2015-12-01

    Graphical abstract: - Highlights: • Ion beam bombardment (IBB) could modify the microstructure of graphene oxide (GO). • IBB could transform a compact multi-layered GO to a few-layered flower-like GO. • IBB could effectively improve the dispersion and the related properties of GO. • The main mechanism was proposed to be the etching and charge effects of IBB. - Abstract: An effective and convenient method using ion beam bombardment (IBB) for separating a multi-layered compact graphene oxide (GO) piece into several small few-layered loose pieces was developed, and it was found that those small GO pieces had formed a flower-like structure. Therein, the main mechanism was proposed to be the etching and charge effects of IBB. This work could provide a facile and promising approach for improving the dispersion and the related properties of GO. Furthermore, X-ray diffraction and Raman spectrum determinations demonstrated that, with the increasing fluence, IBB could effectively decrease the chemical groups in the layers of GO, resulting in the decrease of the layer distance.

  6. Epitaxial silicon semiconductor detectors, past developments, future prospects

    International Nuclear Information System (INIS)

    Gruhn, C.R.

    1976-01-01

    A review of the main physical characteristics of epitaxial silicon as it relates to detector development is presented. As examples of applications results are presented on (1) epitaxial silicon avalanche diodes (ESAD); signal-to-noise, non-linear aspects of the avalanche gain mechanism, gain-bandwidth product, (2) ultrathin epitaxial silicon surface barrier (ESSB) detectors, response to heavy ions, (3) an all-epitaxial silicon diode (ESD), response to heavy ions, charge transport and charge defect. Future prospects of epitaxial silicon as it relates to new detector designs are summarized

  7. Use of high energy ball milling to study the role of graphene nanoplatelets and carbon nanotubes reinforced magnesium alloy

    Energy Technology Data Exchange (ETDEWEB)

    Rashad, Muhammad, E-mail: rashadphy87@gmail.com [College of Materials Science and Engineering, Chongqing University, Chongqing 400044 (China); National Engineering Research Center for Magnesium Alloys, Chongqing University, Chongqing 400044 (China); Pan, Fusheng, E-mail: fspan@cqu.edu.cn [College of Materials Science and Engineering, Chongqing University, Chongqing 400044 (China); National Engineering Research Center for Magnesium Alloys, Chongqing University, Chongqing 400044 (China); Chongqing Academy of Science and Technology, Chongqing, Chongqing 401123 (China); Zhang, Jianyue [College of Materials Science and Engineering, Chongqing University, Chongqing 400044 (China); National Engineering Research Center for Magnesium Alloys, Chongqing University, Chongqing 400044 (China); Asif, Muhammad [School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China)

    2015-10-15

    Graphene nanoplatelets (few layer graphene) and carbon nanotubes were used as reinforcement fillers to enhance the mechanical properties of AZ31 magnesium alloy through high energy ball milling, sintering, and hot extrusion techniques. Experimental results revealed that tensile fracture strain of AZ31 magnesium alloy was enhanced by +49.6% with 0.3 wt.% graphene nanoplatelets compared to −8.3% regression for 0.3 wt.% carbon nanotubes. The tensile strength of AZ31 magnesium alloy was decreased (−11.2%) with graphene nanoplatelets addition, while increased (+7.7%) with carbon nanotubes addition. Unlike tensile test, compression tests showed different trend. The compression strength of carbon nanotubes-AZ31 composite was +51.2% greater than AZ31 magnesium alloy as compared to +0.6% increase for graphene nanoplatelets. The compressive fracture strain of carbon nanotubes-AZ31 composite was decreased (−14.1%) while no significant change in fracture strain of graphene nanoplatelets-AZ31 composite was observed. The X-ray diffraction results revealed that addition of reinforcement particles weaken the basal textures which affect the composite's yield asymmetry. Microstructure evaluation revealed the absence of intermetallic phase formation between reinforcements and matrix. The carbon reinforcements in AZ31 magnesium alloy dissolve and isolate β phases throughout the matrix. The increased fracture strain and mechanical strength of graphene nanoplatelets and carbon nanotubes-AZ31 composites are attributed to large specific surface area of graphene nanoplatelets and stiffer nature of carbon nanotubes respectively. - Highlights: • Powder metallurgy method was used to fabricate magnesium composites. • The AZ31-carbon materials composite were blended using ball milling. • The reinforcement particles weaken the basal texture which affects yield asymmetry of composites. • AZ31-graphene nanoplatelets composite exhibited impressive increase in tensile elongation

  8. Recent advances in the use of graphene-family nanoadsorbents for removal of toxic pollutants from wastewater.

    Science.gov (United States)

    Chowdhury, Shamik; Balasubramanian, Rajasekhar

    2014-02-01

    Adsorption technology is widely considered as the most promising and robust method of purifying water at low cost and with high-efficiency. Carbon-based materials have been extensively explored for adsorption applications because of their good chemical stability, structural diversity, low density, and suitability for large scale production. Graphene--a single atomic layer of graphite--is the newest member in the family of carbon allotropes and has emerged as the "celeb" material of the 21st century. Since its discovery in 2004 by Novoselov, Geim and co-workers, graphene has attracted increased attention in a wide range of applications due to its unprecedented electrical, mechanical, thermal, optical and transport properties. Graphene's infinitely high surface-to-volume ratio has resulted in a large number of investigations to study its application as a potential adsorbent for water purification. More recently, other graphene related materials such as graphene oxide, reduced graphene oxide, and few-layered graphene oxide sheets, as well as nanocomposites of graphene materials have also emerged as a promising group of adsorbent for the removal of various environmental pollutants from waste effluents. In this review article, we present a synthesis of the current knowledge available on this broad and versatile family of graphene nanomaterials for removal of dyes, potentially toxic elements, phenolic compounds and other organic chemicals from aquatic systems. The challenges involved in the development of these novel nanoadsorbents for decontamination of wastewaters have also been examined to help identify future directions for this emerging field to continue to grow. Copyright © 2013 Elsevier B.V. All rights reserved.

  9. Understanding the growth mechanism of graphene on Ge/Si(001) surfaces

    Science.gov (United States)

    Dabrowski, J.; Lippert, G.; Avila, J.; Baringhaus, J.; Colambo, I.; Dedkov, Yu S.; Herziger, F.; Lupina, G.; Maultzsch, J.; Schaffus, T.; Schroeder, T.; Kot, M.; Tegenkamp, C.; Vignaud, D.; Asensio, M.-C.

    2016-01-01

    The practical difficulties to use graphene in microelectronics and optoelectronics is that the available methods to grow graphene are not easily integrated in the mainstream technologies. A growth method that could overcome at least some of these problems is chemical vapour deposition (CVD) of graphene directly on semiconducting (Si or Ge) substrates. Here we report on the comparison of the CVD and molecular beam epitaxy (MBE) growth of graphene on the technologically relevant Ge(001)/Si(001) substrate from ethene (C2H4) precursor and describe the physical properties of the films as well as we discuss the surface reaction and diffusion processes that may be responsible for the observed behavior. Using nano angle resolved photoemission (nanoARPES) complemented by transport studies and Raman spectroscopy as well as density functional theory (DFT) calculations, we report the direct observation of massless Dirac particles in monolayer graphene, providing a comprehensive mapping of their low-hole doped Dirac electron bands. The micrometric graphene flakes are oriented along two predominant directions rotated by 30° with respect to each other. The growth mode is attributed to the mechanism when small graphene “molecules” nucleate on the Ge(001) surface and it is found that hydrogen plays a significant role in this process. PMID:27531322

  10. Cobalt-doped edge-rich MoS{sub 2}/nitrogenated graphene composite as an electrocatalyst for hydrogen evolution reaction

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Lin, E-mail: mal@lingnan.edu.cn [School of Chemistry and Chemical Engineering, Institute of Physical Chemistry, Development Center for New Materials Engineering & Technology in Universities of Guangdong, Lingnan Normal University, Zhanjiang 524048 (China); Department of Chemistry, Zhejiang University, Hangzhou 310027 (China); Xu, Limei; Xu, Xuyao; Zhou, Xiaoping; Luo, Jin; Zhang, Lingling [School of Chemistry and Chemical Engineering, Institute of Physical Chemistry, Development Center for New Materials Engineering & Technology in Universities of Guangdong, Lingnan Normal University, Zhanjiang 524048 (China)

    2016-10-15

    Graphical abstract: Typical HRTEM image and polarization curves of Co-FL-MoS{sub 2}/NG composite via a facile hydrothermal route. - Highlights: • Co-doped MoS{sub 2}/nitrogenated graphene is prepared by a hydrothermal method. • The MoS{sub 2} nanosheets in composite possess few-layered and edge-rich features. • The composite demonstrates a Tafel slope of 59 mV dec{sup −1} in HER. - Abstract: Co-doped MoS{sub 2}/nitrogenated graphene composite has been successfully fabricated through a facile hydrothermal method and is investigated as an electrocatalyst for hydrogen evolution reaction (HER). The results reveal that Co{sup 2+} ions have been successfully incorporated into MoS{sub 2} lattice which can give rise to structural strain and dislocation. As a result, the Co-doped MoS{sub 2} nanosheets are characteristic of few layers (3–6 layers) and abundant exposed active edges. Meanwhile, Co-doped MoS{sub 2} nanosheets are well implanted into the nitrogen-doped graphene networks to form robust composite. When evaluated as a catalyst for HER, the obtained composite demonstrates superior electrocatalytic activities towards HER including low onset potential (∼90 mV), large cathodic current density and small Tafel slope of 59 mV dec{sup −1}. It is believed that the desirable catalytic properties can be credited to the unique microstructures including few-layer features, plentiful exposed active sites as well as intimate integration with highly electroconductive nitrogenated graphene.

  11. Graphene Synthesis & Graphene/Polymer Nanocomposites

    Science.gov (United States)

    Liao, Ken-Hsuan

    We successfully developed a novel, fast, hydrazine-free, high-yield method for producing single-layered graphene. Graphene sheets were formed from graphite oxide by reduction with de-ionized water at 130 ºC. Over 65% of the sheets are single graphene layers. A dehydration reaction of exfoliated graphene oxide was utilized to reduce oxygen and transform C-C bonds from sp3 to sp2. The reduction appears to occur in large uniform interconnected oxygen-free patches so that despite the presence of residual oxygen the sp2 carbon bonds formed on the sheets are sufficient to provide electronic properties comparable to reduced graphene sheets obtained using other methods. Cytotoxicity of aqueous graphene was investigated with Dr. Yu-Shen Lin by measuring mitochondrial activity in adherent human skin fibroblasts using two assays. The methyl-thiazolyl-diphenyl-tetrazolium bromide (MTT) assay, a typical nanotoxicity assay, fails to predict the toxicity of graphene oxide and graphene toxicity because of the spontaneous reduction of MTT by graphene and graphene oxide, resulting in a false positive signal. An appropriate alternate assessment, using the water soluble tetrazolium salt (WST-8) assay, reveals that the compacted graphene sheets are more damaging to mammalian fibroblasts than the less densely packed graphene oxide. Clearly, the toxicity of graphene and graphene oxide depends on the exposure environment (i.e. whether or not aggregation occurs) and mode of interaction with cells (i.e. suspension versus adherent cell types). Ultralow percolation concentration of 0.15 wt% graphene, as determined by surface resistance and modulus, was observed from in situ polymerized thermally reduced graphene (TRG)/ poly-urethane-acrylate (PUA) nanocomposite. A homogeneous dispersion of TRG in PUA was revealed by TEM images. The aspect ratio of dispersed TRG, calculated from percolation concentration and modulus, was found to be equivalent to the reported aspect ratio of single

  12. Self-assembly of ordered graphene nanodot arrays

    DEFF Research Database (Denmark)

    Camilli, Luca; Jørgensen, Jakob H.; Tersoff, Jerry

    2017-01-01

    The ability to fabricate nanoscale domains of uniform size in two-dimensional materials could potentially enable new applications in nanoelectronics and the development of innovative metamaterials. However, achieving even minimal control over the growth of two-dimensional lateral heterostructures...... composite of uniform-size semiconducting graphene quantum dots laterally integrated within a larger-bandgap matrix, holds promise for novel electronic and optoelectronic properties, with a variety of potential device applications....... at such extreme dimensions has proven exceptionally challenging. Here we show the spontaneous formation of ordered arrays of graphene nano-domains (dots), epitaxially embedded in a two-dimensional boron–carbon–nitrogen alloy. These dots exhibit a strikingly uniform size of 1.6 ± 0.2 nm and strong ordering...

  13. The possibility of chemically inert, graphene-based all-carbon electronic devices with 0.8 eV gap.

    Science.gov (United States)

    Qi, Jing Shan; Huang, Jian Yu; Feng, Ji; Shi, Da Ning; Li, Ju

    2011-05-24

    Graphene is an interesting electronic material. However, flat monolayer graphene does not have significant gap in the electronic density of states, required for a large on-off ratio in logic applications. We propose here a novel device architecture, composed of self-folded carbon nanotube-graphene hybrids, which have been recently observed experimentally in Joule-heated graphene. These experiments demonstrated the feasibility of cutting, folding, and welding few-layer graphene in situ to form all-carbon nanostructures with complex topologies. The electronic gap of self-folded nanotubes can be combined with the semimetallicity of graphene electrodes to form a "metal-semiconductor-metal" junction. By ab initio calculations we demonstrate large energy gaps in the transmission spectra of such junctions, which preserve the intrinsic transport characteristics of the semiconducting nanotubes despite topologically necessary disinclinations at the flat graphene-curved nanotube interface. These all-carbon devices are proposed to be constructed by contact probe cutting and high-temperature annealing and, if produced, would be chemically stable at room temperature under normal gas environments.

  14. All epitaxial silicon diode heavy ion detector

    International Nuclear Information System (INIS)

    Gruhn, C.R.; Goldstone, P.D.; Jarmie, N.

    1976-01-01

    An all epitaxial silicon diode (ESD) heavy ion detector has been designed, fabricated, and tested. The active area of the detector is 5 cm 2 and has a total thickness of 50 μ. The response of the detector has been studied with fission fragments, alpha particles, oxygen ions, and sulfur ions. A number of advantages in terms of both fabrication and performance are discussed

  15. Graphene transfer process and optimization of graphene coverage

    Science.gov (United States)

    Norfaezah Sabki, Syarifah; Hafly Shamsuri, Shafiq; Fazlina Fauzi, Siti; Lim Chon-Ki, Meghashama; Othman, Noraini

    2017-11-01

    Graphene grown on transition metal is known to be high in quality due to its controlled amount of defects and potentially used for many electronic applications. The transfer process of graphene grown on transition metal to a new substrate requires optimization in order to ensure that high graphene coverage can be obtained. In this work, an improvement in the graphene transfer process is performed from graphene grown on copper foil. It has been observed that the graphene coverage is affected by the pressure given to the top of PDMS to eliminate water and air between graphene and SiO2 (new substrate). This work experimented with different approaches to optimize the graphene coverage, and stamping method has proven to be the best technique in obtaining the largest graphene coverage. This work also highlights the elimination of impurities from graphene after the transfer process, known to be PMMA residues, which involved immersion of graphene in acetone. This method has improved the graphene conductivity.

  16. Nonlinear graphene plasmonics

    Science.gov (United States)

    Ooi, Kelvin J. A.; Tan, Dawn T. H.

    2017-10-01

    The rapid development of graphene has opened up exciting new fields in graphene plasmonics and nonlinear optics. Graphene's unique two-dimensional band structure provides extraordinary linear and nonlinear optical properties, which have led to extreme optical confinement in graphene plasmonics and ultrahigh nonlinear optical coefficients, respectively. The synergy between graphene's linear and nonlinear optical properties gave rise to nonlinear graphene plasmonics, which greatly augments graphene-based nonlinear device performance beyond a billion-fold. This nascent field of research will eventually find far-reaching revolutionary technological applications that require device miniaturization, low power consumption and a broad range of operating wavelengths approaching the far-infrared, such as optical computing, medical instrumentation and security applications.

  17. Plasmonic graphene transparent conductors.

    Science.gov (United States)

    Xu, Guowei; Liu, Jianwei; Wang, Qian; Hui, Rongqing; Chen, Zhijun; Maroni, Victor A; Wu, Judy

    2012-03-08

    Plasmonic graphene is fabricated using thermally assisted self-assembly of silver nanoparticles on graphene. The localized surface-plasmonic effect is demonstrated with the resonance frequency shifting from 446 to 495 nm when the lateral dimension of the Ag nanoparticles increases from about 50 to 150 nm. Finite-difference time-domain simulations are employed to confirm the experimentally observed light-scattering enhancement in the solar spectrum in plasmonic graphene and the decrease of both the plasmonic resonance frequency and amplitude with increasing graphene thickness. In addition, plasmonic graphene shows much-improved electrical conductance by a factor of 2-4 as compared to the original graphene, making the plasmonic graphene a promising advanced transparent conductor with enhanced light scattering for thin-film optoelectronic devices. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Molecular beam epitaxy growth of free-standing plane-parallel InAs nanoplates

    Science.gov (United States)

    Aagesen, Martin; Johnson, Erik; Sørensen, Claus B.; Mariager, Simon O.; Feidenhans'l, Robert; Spiecker, Erdmann; Nygård, Jesper; Lindelof, Poul Erik

    2007-12-01

    Free-standing nanostructures such as suspended carbon nanotubes, graphene layers, III-V nanorod photonic crystals and three-dimensional structures have recently attracted attention because they could form the basis of devices with unique electronic, optoelectronic and electromechanical characteristics. Here we report the growth by molecular beam epitaxy of free-standing nanoplates of InAs that are close to being atomically plane. The structural and transport properties of these semiconducting nanoplates have been examined with scanning electron microscopy, transmission electron microscopy, X-ray diffraction and low-temperature electron transport measurements. The carrier density of the nanoplates can be reduced to zero by applying a voltage to a nearby gate electrode, creating a new type of suspended quantum well that can be used to explore low-dimensional electron transport. The electronic and optical properties of such systems also make them potentially attractive for photovoltaic and sensing applications.

  19. FOCUS ON GRAPHENE

    International Nuclear Information System (INIS)

    Peres, N M R; Ribeiro, Ricardo M

    2009-01-01

    Graphene physics is currently one of the most active research areas in condensed matter physics. Countless theoretical and experimental studies have already been performed, targeting electronic, magnetic, thermal, optical, structural and vibrational properties. Also, studies that modify pristine graphene, aiming at finding new physics and possible new applications, have been considered. These include patterning nanoribbons and quantum dots, exposing graphene's surface to different chemical species, studying multilayer systems, and inducing strain and curvature (modifying in this way graphene's electronic properties). This focus issue includes many of the latest developments on graphene research. Focus on Graphene Contents The effect of sublattice symmetry breaking on the electronic properties of doped graphene A Qaiumzadeh and R Asgari Interfaces within graphene nanoribbons J Wurm, M Wimmer, I Adagideli, K Richter and H U Baranger Weak localization and transport gap in graphene antidot lattices J Eroms and D Weiss Electronic properties of graphene antidot lattices J A Fuerst, J G Pedersen, C Flindt, N A Mortensen, M Brandbyge, T G Pedersen and A-P Jauho Splitting of critical energies in the n=0 Landau level of graphene Ana L C Pereira Double-gated graphene-based devices S Russo, M F Craciun, M Yamamoto, S Tarucha and A F Morpurgo Pinning and switching of magnetic moments in bilayer graphene Eduardo V Castro, M P Lopez-Sancho and M A H Vozmediano Electronic transport properties of graphene nanoribbons Katsunori Wakabayashi, Yositake Takane, Masayuki Yamamoto and Manfred Sigrist Many-body effects on out-of-plane phonons in graphene J Gonzalez and E Perfetto Graphene zigzag ribbons, square lattice models and quantum spin chains Mahdi Zarea and Nancy Sandler On the universal ac optical background in graphene V P Gusynin, S G Sharapov and J P Carbotte Heat conduction in graphene: experimental study and theoretical interpretation S Ghosh, D L Nika, E P Pokatilov and A A

  20. Research Progress of Preparation Methods of Graphene Nanocomposites for Low-Temperature Fuel Cells and Lithium-Ion Batteries

    Directory of Open Access Journals (Sweden)

    Xingxing Wang

    2016-05-01

    Full Text Available Because of its unique two-dimensional structure, huge specific surface area, high electrical conductivity, and other excellent performances, graphene has shown great potential for application in catalysis, electronics, sensors, energy storage, and other areas. Especially, graphene nanocomposites have been found to be promising catalyst support for low-temperature fuel cells, and as anode nanomaterials for high reversible capacity and excellent rate capability for lithium-ion batteries, which has triggered a new round of research hotspot. Preparation methods of graphene nanocomposites mainly for low-temperature fuel cells are reviewed. Particularly, the research progress and principles of physical preparation methods (molecular beam epitaxy, chemical preparation methods (chemical reduction, electrochemical deposition and hydrothermal/solvothermal methods, etc. and high-energy ball milling are summarized. Research outlook of graphene nanocomposites for low-temperature fuel cells are prospected.