WorldWideScience

Sample records for fabricating thin films

  1. Photonic thin film fabrication and characterization for display applications

    Science.gov (United States)

    Sun, Xiaowei

    In this thesis, the fabrication and characterization of various kinds of thin films useful for display applications are discussed. The fabrication technique used was mainly pulsed laser deposition, sputtering was also used to fabricate ITO films on glass. In-situ resistance measurement was used to characterize the initial growth of ITO thin films on glass. It was found that at a growth temperature of 150°C or above, ITO grows via a 2D layer by layer growth mechanism with a conductive critical thickness of about one lattice constant. With the growth temperature of less than 150°C, the films grow via a 3D growth mode. The growth mode transition also coincides with the amorphous to poly transition. In this thesis, a novel pulsed laser deposition technique called liquid target pulsed laser deposition was reported. It was used to fabricate GaN thin films from a gallium liquid. Liquid target pulsed laser deposition, to a certain extent, overcomes the target deterioration, target rotation, and splashing problems compared to traditional solid target pulsed laser deposition. Reasonably good crystal quality GaN thin films were fabricated on various substrates of quartz, silicon, and sapphire with a thin layer of ZnO buffer. Epitaxially grown GaN films were fabricated on ZnO buffered sapphire at an elevated substrate temperature. We studied the optical properties of epitaxially grown ZnO thin film on sapphire by photoluminescence measurement and variable angle spectroscopic ellipsometry. The bandgap, at room temperature and at 10K, and the refractive index of ZnO on sapphire were obtained. Phosphor thin film is an important topic in display application for color representation. In this thesis, we report the fabrication of red, green and blue primary color silicate phosphor thin films on silicon and silicon dioxide covered silicon substrates by pulsed laser deposition. By annealing at 800°C--1000°C, reasonably good purity red, green and blue photoluminescence were obtained

  2. Synthesis and fabrication of graphene oxide thin film

    Science.gov (United States)

    Kadam, Mahesh M.; Sravani, Medha B.; Gaikar, V. G.; Jha, Neetu

    2013-06-01

    The primary aim of the investigation is to synthesize graphene oxide at room temperature and fabricate a flexible free standing graphene oxide thin film. Modified Hummers technique was employed for the synthesis of graphene oxide using graphite as the starting material. Graphene oxide is a layered material consisting of hydrophilic oxygenated functional groups on their basal planes and edges. Graphene-oxide thin film has been fabricated via solvent-evaporation technique. Functional, elemental and structural analysis of the samples was performed using several characterization techniques.

  3. Fullerene thin-film transistors fabricated on polymeric gate dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Puigdollers, J. [Micro and Nano Technology Group (MNT), Dept. Enginyeria Electronica, Universitat Politecnica Catalunya, C/ Jordi Girona 1-3, Modul C4, 08034-Barcelona (Spain)], E-mail: jpuigd@eel.upc.edu; Voz, C. [Micro and Nano Technology Group (MNT), Dept. Enginyeria Electronica, Universitat Politecnica Catalunya, C/ Jordi Girona 1-3, Modul C4, 08034-Barcelona (Spain); Cheylan, S. [ICFO - Mediterranean Technology Park, Avda del Canal Olimpic s/n, 08860-Castelldefels (Spain); Orpella, A.; Vetter, M.; Alcubilla, R. [Micro and Nano Technology Group (MNT), Dept. Enginyeria Electronica, Universitat Politecnica Catalunya, C/ Jordi Girona 1-3, Modul C4, 08034-Barcelona (Spain)

    2007-07-16

    Thin-film transistors with fullerene as n-type organic semiconductor have been fabricated. A polymeric gate dielectric, polymethyl methacrylate, has been used as an alternative to usual inorganic dielectrics. No significant differences in the microstructure of fullerene thin-films grown on polymethyl methacrylate were observed. Devices with either gold or aluminium top electrodes have been fabricated. Although the lower work-function of aluminium compared to gold should favour electron injection, similar field-effect mobilities in the range of 10{sup -2} cm{sup 2} V{sup -1} s{sup -1} were achieved in both cases. Actually, the output characteristics indicate that organic thin-film transistors behave more linearly with gold than with aluminium electrodes. These results confirm that not only energy barriers determine carrier injection at metal/organic interfaces, but also chemical interactions.

  4. Fabrication of hierarchically ordered crystalline titania thin films

    Energy Technology Data Exchange (ETDEWEB)

    Niedermeier, Martin; Kaune, Gunar; Rawolle, Monika; Koerstgens, Volker; Ruderer, Matthias; Mueller-Buschbaum, Peter [TU Muenchen, Physik-Department LS E13, Garching (Germany); Gutmann, Jochen S. [Max-Planck Institute for Polymer Research, Mainz (Germany)

    2010-07-01

    Thin films of nanostructured titania have received a lot of attention in various applications such as photovoltaics within the last years. Having a well defined morphology is crucial for the functionality and performance of these films because it defines the volume to surface ratio and thereby the surface being available for interface reactions. Increasing the total film thickness is a common approach in order to increase the surface area. The present work focuses on the fabrication of hierarchically structured titania thin films and their crystallinity. A layer-by-layer spin-coating approach is investigated. A solution based sol-gel process using diblock copolymers as a template to obtain nanocomposite films is followed by calcination to obtain crystalline titania structures. The obtained structures are investigated using several imaging techniques like SEM and AFM. The crystallinity and the thickness of the films are analyzed with XRD and XRR.

  5. Crystalline, highly oriented MOF thin film: the fabrication and application.

    Science.gov (United States)

    Fu, Zhihua; Xu, Gang

    2016-10-24

    The thin film of metal-organic frameworks (MOFs) is a rapidly developing research area which has tremendous potential applications in many fields. One of the major challenges in this area is to fabricate MOF thin film with good crystallinity, high orientation and well-controlled thickness. In order to address this challenge, different appealing approaches have been studied intensively. Among various oriented MOF films, many efforts have also been devoted to developing novel properties and broad applications, such as in gas separator, thermoelectric, storage medium and photovoltaics. As a result, there has been a large demand for fundamental studies that can provide guidance and experimental data for further applications. In this account, we intend to present an overview of current synthetic methods for fabricating oriented crystalline MOF thin film and bring some updated applications. We give our perspective on the background, preparation and applications that led to the developments in this area and discuss the opportunities and challenges of using crystalline, highly oriented MOF thin film.

  6. Fabrication of PDMS/SWCNT thin films as saturable absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Romano, I; Sanchez-Mondragon, J J [Photonics and Optical Physics Laboratory, Optics Department, INAOE Apdo. Postal 51 and 216, Tonantzintla, Puebla 72000 (Mexico); Davila-Rodriguez, J; Delfyett, P J [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, FL 32816-2700 (United States); May-Arrioja, D A, E-mail: hromano@inaoep.mx [Depto. de Ingenieria Electronica, UAM Reynosa Rodhe, Universidad Autonoma de Tamaulipas, Carr. Reynosa-San Fernando S/N, Reynosa, Tamaulipas 88779 (Mexico)

    2011-01-01

    We present a novel technique to fabricate a saturable absorber thin film based on Polydimethylsiloxane doped with Single Wall Carbon Nanotubes. Using this film a passive mode-locked fiber laser in a standard ring cavity configuration was built by inserting the film between two angled connectors. Self-starting passively mode-locked laser operation was easily observed. The generated pulses have a width of 1.26 ps at a repetition rate of 22.7 MHz with an average power of 4.89 mW.

  7. Carbon Nanotubes for Thin Film Transistor: Fabrication, Properties, and Applications

    Directory of Open Access Journals (Sweden)

    Yucui Wu

    2013-01-01

    Full Text Available We review the present status of single-walled carbon nanotubes (SWCNTs for their production and purification technologies, as well as the fabrication and properties of single-walled carbon nanotube thin film transistors (SWCNT-TFTs. The most popular SWCNT growth method is chemical vapor deposition (CVD, including plasma-enhanced chemical vapor deposition (PECVD, floating catalyst chemical vapor deposition (FCCVD, and thermal CVD. Carbon nanotubes (CNTs used to fabricate thin film transistors are sorted by electrical breakdown, density gradient ultracentrifugation, or gel-based separation. The technologies of applying CNT random networks to work as the channels of SWCNT-TFTs are also reviewed. Excellent work from global researchers has been benchmarked and analyzed. The unique properties of SWCNT-TFTs have been reviewed. Besides, the promising applications of SWCNT-TFTs have been explored. Finally, the key issues to be solved in future have been summarized.

  8. Thin-Film Ceramic Thermocouples Fabricated and Tested

    Science.gov (United States)

    Wrbanek, John D.; Fralick, Gustave C.; Farmer, Serene C.; Sayir, Ali; Gregory, Otto J.; Blaha, Charles A.

    2004-01-01

    The Sensors and Electronics Technology Branch of the NASA Glenn Research Center is developing thin-film-based sensors for surface measurement in propulsion system research. Thin-film sensors do not require special machining of the components on which they are mounted, and they are considerably thinner than wire- or foil-based sensors. One type of sensor being advanced is the thin-film thermocouple, specifically for applications in high-temperature combustion environments. Ceramics are being demonstrated as having the potential to meet the demands of thin-film thermocouples in advanced aerospace environments. The maximum-use temperature of noble metal thin-film thermocouples, 1500 C (2700 F), may not be adequate for components used in the increasingly harsh conditions of advanced aircraft and next-generation launch vehicles. Ceramic-based thermocouples are known for their high stability and robustness at temperatures exceeding 1500 C, but are typically in the form of bulky rods or probes. As part of ASTP, Glenn's Sensors and Electronics Technology Branch is leading an in-house effort to apply ceramics as thin-film thermocouples for extremely high-temperature applications as part of ASTP. Since the purity of the ceramics is crucial for the stability of the thermocouples, Glenn's Ceramics Branch and Case Western Reserve University are developing high-purity ceramic sputtering targets for fabricating high-temperature sensors. Glenn's Microsystems Fabrication Laboratory, supported by the Akima Corporation, is using these targets to fabricate thermocouple samples for testing. The first of the materials used were chromium silicide (CrSi) and tantalum carbide (TaC). These refractory materials are expected to survive temperatures in excess of 1500 C. Preliminary results indicate that the thermoelectric voltage output of a thin-film CrSi versus TaC thermocouple is 15 times that of the standard type R (platinum-rhodium versus platinum) thermocouple, producing 20 mV with a 200

  9. Development of Thin Conducting Film Fabrication Methods.

    Science.gov (United States)

    1979-12-01

    mediate mandrels ( beeswax , polymeric resins such as PVA, PVC, PBS, Saran). Efforts to transfer the foils intact from formation on intermediate mandrels...methods Investigated for removing and transferring pyrolytic carbon films onto cylindrical electrodes consist of: (1) melted beeswax and other high...substrate material for this study. In this particular investigation, several 2.5-cm x 10-cm-diameter fused silica cylindrical mandrels were CVD coated

  10. Thin film coated submicron gratings: theory, design, fabrication and application

    Energy Technology Data Exchange (ETDEWEB)

    Heine, C.

    1996-12-31

    The realization of new applications of submicron grating structures requires efficient theoretical methods and elaborate fabrication techniques. In this work rigorous diffraction theory for one-dimensional gratings has been investigated and optimization techniques, based on methods used in thin film optics, have been developed. Submicron gratings embossed in polycarbonate have been fabricated and characterized. This includes transmission measurements which are in good agreement with theoretical calculations. Designs for a wide range of optical filters, which lead to improved optical and mechanical properties, are presented. This has been demonstrated for broadband antireflection structures for solar energy applications, based on MgF{sub 2}-coated gratings. (author) figs., tabs., refs.

  11. Fabrication of semi-transparent superoleophobic thin film from fabrics and nanoparticle-based hierarchical structure

    Directory of Open Access Journals (Sweden)

    Nishizawa S.

    2013-08-01

    Full Text Available Superoleophobic thin films have many potential applications including fluid transfer, fluid power systems, stain resistant and antifouling materials, and microfluidics among others. Transparency is also desired with superhydrophobicity for their numerous applications; however transparency and oleophobicity are almost incompatible relationship with each other in the point of surface structure. Because oleophobicity required rougher structure at nano-micro scale than hydrophobicity, and these rough structure brings light scattering. So far, there is very few report of the compatible of transparency and superoleophobicity. In this report, we proposed the see-through type fabrics using the nanoparticle-based hierarchical structure thin film for improving both of oleophobicity and transparency. The vacant space between fibrils of fabrics has two important roles: the one is to through the light, another one is to introduce air layer to realize Cassie state of liquid droplet on thin film. To realize the low surface energy and nanoscale rough structure surface on fibrils, we used the spray method with perfluoroalkyl methacrylic copolymer (PMC, silica nano particles and volatile solvent. From the SEM image, the hierarchical structures of nanoparticle were formed uniformly on the fabrics. The transparency of thin film obtained was approximately 61% and the change of transparency between pre-coated fabrics and coated was 11%. From investigation of the surface wettability, the contact angles of oils (rapeseed oil and hexadecane and water droplet on the fabricated film were over 150 degree.

  12. Fabrication of piezoelectric AlN thin film for FBARs

    Institute of Scientific and Technical Information of China (English)

    LIU Wei-Kuo; TAY Kok-Wan; KUO Sin-Cha; WU Menq-Jion

    2009-01-01

    This paper focuses on the fabrication of film bulk acoustic-wave resonator (FBAR) comprising an alu-minum nitride (AlN) piezoelectric thin film sandwiched between two metal electrodes and located on a silicon substrate with a low-stress silicon nitride (Si3N4) support membrane for high frequency wireless applications, and analyzes the optimization of the thin AlN film deposition parameters on Mo electrodes using the reactive RF magnetron sputter system. Several critical parameters of the sputtering process such as RF power and Ar/N2 flow rate ratio were studied to clarify their effects on different electrodes characteristics of the AlN films. The experiment indicated that the process for Mo electrode was easier compared with that of the Pt/Ti or Au/Cr bi-layer electrode as it entailed only one photo resist and metal deposition step. Besides, Pt/Ti or Au/Cr electrodes reduced the resonance frequency due to their high mass density and low bulk acoustic velocity. Compared with the case of the AI bottom electrode, there is no evident amorphous layer between the Mo bottom electrode and the deposited AlN film. The characteristics of the FBAR devices depend not only upon the thickness and quality of the AlN film, but also upon the thickness of the top electrode and the materials used. The results indicate that decreas-ing the thickness of either the AlN film or the top electrode increases the resonance frequency. This suggests the potential of tuning the performance of the FBAR device by carefully controlling AlN film thickness. Besides, increasing either the thickness of the AlN film or higher RF power has improved a stronger c-axis orientation and tended to promote a narrower rocking curve full-width at half-maximum (FWHM), but increased both the grain size and the surface roughness. An FBAR device fabricated un-der optimal AlN deposition parameters has demonstrated the effective electromechanical coupling co-efficient (Keff2) and the quality factor (Qfx) are about 1

  13. Fabrication of piezoelectric AlN thin film for FBARs

    Institute of Scientific and Technical Information of China (English)

    TAY; Kok-Wan; KUO; Sin-Cha; WU; Menq-Jion

    2009-01-01

    This paper focuses on the fabrication of film bulk acoustic-wave resonator (FBAR) comprising an alu- minum nitride (AlN) piezoelectric thin film sandwiched between two metal electrodes and located on a silicon substrate with a low-stress silicon nitride (Si3N4) support membrane for high frequency wireless applications, and analyzes the optimization of the thin AlN film deposition parameters on Mo electrodes using the reactive RF magnetron sputter system. Several critical parameters of the sputtering process such as RF power and Ar/N2 flow rate ratio were studied to clarify their effects on different electrodes characteristics of the AlN films. The experiment indicated that the process for Mo electrode was easier compared with that of the Pt/Ti or Au/Cr bi-layer electrode as it entailed only one photo resist and metal deposition step. Besides, Pt/Ti or Au/Cr electrodes reduced the resonance frequency due to their high mass density and low bulk acoustic velocity. Compared with the case of the Al bottom electrode, there is no evident amorphous layer between the Mo bottom electrode and the deposited AlN film. The characteristics of the FBAR devices depend not only upon the thickness and quality of the AlN film, but also upon the thickness of the top electrode and the materials used. The results indicate that decreas- ing the thickness of either the AlN film or the top electrode increases the resonance frequency. This suggests the potential of tuning the performance of the FBAR device by carefully controlling AlN film thickness. Besides, increasing either the thickness of the AlN film or higher RF power has improved a stronger c-axis orientation and tended to promote a narrower rocking curve full-width at half-maximum (FWHM), but increased both the grain size and the surface roughness. An FBAR device fabricated un- der optimal AlN deposition parameters has demonstrated the effective electromechanical coupling co- efficient (k2eff) and the quality factor (Qfx) are about

  14. The fabrication and microwave characterisation of ferromagnetic thin films

    CERN Document Server

    Hood, K A

    2001-01-01

    This thesis discusses work carried out on the examination of the magnetic and microwave properties of samples based on the ferromagnetic material, METGLAS 2605SC. Sputter deposited thin film samples were stacked together to produce arrays and their permittivity and permeability was measured over a frequency range of 8-12 GHz. Powdered METGLAS 2605SC was mixed with wax and moulded to form composite samples for similar testing over the frequency range 2-20 GHz. The fabrication of the samples was monitored at each stage, and the measurement techniques were shown to be precise and accurate. Similar work in this field is discussed, as is the basic theory used in this project. It is hoped that this thesis constitutes a comprehensive text on the fabrication and measurement and analysis of magnetic samples at microwave frequencies should this work he continued.

  15. A New Fabrication Process for Thin-Film Multijunction Thermal Converters

    Energy Technology Data Exchange (ETDEWEB)

    WUNSCH,THOMAS F.; KINARD,J.R.; MANGINELL,RONALD P.; SOLOMON JR.,OTIS M.; LIPE,T.E.; JUNGLING,KENNETH CORNEAL

    2000-12-08

    Advanced thin film processing and packaging technologies are employed in the fabrication of new planar thin-film multifunction thermal converters. The processing, packaging, and design features build on experience gained from prior NIST demonstrations of thin-film converters and are optimized for improved sensitivity, bandwidth, manufacturability, and reliability.

  16. A New Method of Fabricating NASICON Thin Film

    Institute of Scientific and Technical Information of China (English)

    WNGLing; SUNJialin; 等

    1998-01-01

    Nasicon thin films of 15 μm thick on YSZ sub-strates were prepared by means of solid state reaction at 1230℃ for 10 hours,Stuctural characteriza-tion of the films were performed by XRD ,SEM and EDX,A new tyype of CO2 gas sensor with Nasicon thin film as solid electrolyte was developed.

  17. Fabrication and characterization of vacuum deposited fluorescein thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jalkanen, Pasi, E-mail: pasi.jalkanen@gmail.co [University of Jyvaeskylae, Department of Physics, Nanoscience center (NSC), P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Kulju, Sampo, E-mail: sampo.j.kulju@jyu.f [University of Jyvaeskylae, Department of Physics, Nanoscience center (NSC), P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Arutyunov, Konstantin, E-mail: konstantin.arutyunov@jyu.f [University of Jyvaeskylae, Department of Physics, Nanoscience center (NSC), P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Antila, Liisa, E-mail: liisa.j.antila@jyu.f [University of Jyvaeskylae, Department of Chemistry, Nanoscience center (NSC) P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Myllyperkioe, Pasi, E-mail: pasi.myllyperkio@jyu.f [University of Jyvaeskylae, Department of Chemistry, Nanoscience center (NSC) P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Ihalainen, Teemu, E-mail: teemu.o.ihalainen@jyu.f [University of Jyvaeskylae, Department of Biology, Nanoscience center (NSC), P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Kaeaeriaeinen, Tommi, E-mail: tommi.kaariainen@lut.f [Lappeenranta University of Technology, ASTRal, P.O. Box 181, FI-50101 Mikkeli (Finland); Kaeaeriaeinen, Marja-Leena, E-mail: marja-leena.kaariainen@lut.f [Lappeenranta University of Technology, ASTRal, P.O. Box 181, FI-50101 Mikkeli (Finland); Korppi-Tommola, Jouko, E-mail: jouko.korppi-tommola@jyu.f [University of Jyvaeskylae, Department of Biology, Nanoscience center (NSC), P.O. Box 35, FI-40014 Jyvaeskylae (Finland)

    2011-03-31

    Simple vacuum evaporation technique for deposition of dyes on various solid surfaces has been developed. The method is compatible with conventional solvent-free nanofabrication processing enabling fabrication of nanoscale optoelectronic devices. Thin films of fluorescein were deposited on glass, fluorine-tin-oxide (FTO) coated glass with and without atomically layer deposited (ALD) nanocrystalline 20 nm thick anatase TiO{sub 2} coating. Surface topology, absorption and emission spectra of the films depend on their thickness and the material of supporting substrate. On a smooth glass surface the dye initially forms islands before merging into a uniform layer after 5 to 10 monolayers. On FTO covered glass the absorption spectra are similar to fluorescein solution in ethanol. Absorption spectra on ALD-TiO{sub 2} is red shifted compared to the film deposited on bare FTO. The corresponding emission spectra at {lambda} = 458 nm excitation show various thickness and substrate dependent features, while the emission of films deposited on TiO{sub 2} is quenched due to the effective electron transfer to the semiconductor conduction band.

  18. Modeling and fabrication of a planar thin film airflow sensor

    Science.gov (United States)

    Adamec, Richard J.; Tanner, Philip G.; Thiel, David V.

    2001-11-01

    A thin film airflow transducer based on the hot wire anemometer principle was designed using current MEMS modelling & simulation software. Flow sensors are commonly implemented with thermal isolation of the sensor from the bulk substrate mass using methods such as reverse side etching or sacrificial layers, however this paper will present a sensor relying on thermal insulation only. This insulation may be provided by layers of material exhibiting relatively poor thermal conduction characteristics such as silicon dioxide or polyimide, giving rise to a number of advantages such as removing the process of reverse side etching. Limiting fabrication to use of simple processes such as photolithography and sputtering/evaporative deposition also simplifies this design and assists in greatly increasing the compatibility with standard CMOS fabrication processes and materials. A combination of both theoretical computer modelling and physical fabrication and testing has been the approach to this research. Preliminary testing of this design has demonstrated small yet measurable temperature gradients across the device surface during steady state operation. The novel approach to this device is the investigation of pulsed operation, effectively a transient analysis that allows the thermal conduction effects of the bulk mass to be significantly reduced, leading to a significant increase of both efficiency and response time. Electro-thermo-mechanical and computational fluid dynamic analysis of the structure successfully model the thermal conduction, radiation and forced convection effects of the device during and after ohmic heating of the sensor's heating element.

  19. fabrication and performance study of uniform thin film integrated filters

    African Journals Online (AJOL)

    Dr Obe

    been analysed using the concept of matrix parameter functions. The above filter ... concept of distributed parameter. Networks. The thin film .... circuit design concept involving discrete elements ... and Micro- system Electronics,. Proc. National ...

  20. Fabrication and Characterization of Nanocrystalline VO2 Thin Films

    Institute of Scientific and Technical Information of China (English)

    WANG Hong-Chen; YI Xin-Jian; LAI Jian-Jun; LI Yi

    2005-01-01

    @@ Nanocrystalline VO2 films with phase transition temperature 34℃ have been fabricated on Si3N4-film-coated silicon and quartz substrates by argon-annealing films of metastable VO2(B). The original VO2(B) films are obtained by ion beam sputtering in an argon-oxygen atmosphere at 200 ℃. The nanocrystalline VO2 films exhibit strong changes in electrical and optical properties when a phase transition is completed. The phase transition temperature in the as-fabricated samples is about 34 ℃, which is smaller in comparison with 68 ℃ in the singlecrystalline VO2 material. A lower phase transition temperature is favorable for device applications such as smart window coating and low power consumption optical switching.

  1. Thin film lithium-based batteries and electrochromic devices fabricated with nanocomposite electrode materials

    Energy Technology Data Exchange (ETDEWEB)

    Gillaspie, Dane T; Lee, Se-Hee; Tracy, C. Edwin; Pitts, John Roland

    2014-02-04

    Thin-film lithium-based batteries and electrochromic devices (10) are fabricated with positive electrodes (12) comprising a nanocomposite material composed of lithiated metal oxide nanoparticles (40) dispersed in a matrix composed of lithium tungsten oxide.

  2. Growth of IGZO thin films and fabrication of transparent thin film transistor by RF magnetron sputtering

    Science.gov (United States)

    Sanal, K. C.; Majeesh, M.; Jayaraj, M. K.

    2013-09-01

    n-Type transparent conducting indiuim galium zinc oxide (IGZO) films were successfully grown on glass sub- strates at room temperature by rf magnetron sputtering . Structural, optical, morphological and electrical properties of IGZO films deposited at different rf power were investigated.Composition of the film was confirmed by EDAX measurement which shows that percentage of Zn increased with the rf power. Structural studies by X-ray diffraction showed that as deposited IGZO films were amorphous. The roughness of the film was increased with increase in rf power and smooth film of average roughness 0.75nm was obtained at 40W rf power. The average transmission in the visible range was greater than 80% and the transmission in the higher wavelength re- gion decreased with increase in RF power. Refractive index of IGZO film calculated by Swanepoel technique was 1.92. The carrier concentration in IGZO films can be controlled by controlling rf which can vary Zn/(Ga+In+Zn) ratio. The bottom gate structured transparent TFTs fabricated using n-type IGZO active layers operated in enhancement mode with field effect mobility 2.5 cm2/Vs and threshold voltage 20V.

  3. Antimicrobial activity of biopolymer–antibiotic thin films fabricated by advanced pulsed laser methods

    Energy Technology Data Exchange (ETDEWEB)

    Cristescu, R., E-mail: rodica.cristescu@inflpr.ro [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, P.O. Box MG-36, Bucharest-Magurele (Romania); Popescu, C.; Dorcioman, G.; Miroiu, F.M.; Socol, G.; Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, P.O. Box MG-36, Bucharest-Magurele (Romania); Gittard, S.D.; Miller, P.R.; Narayan, R.J. [Biomedical Engineering, University of North Carolina and North Carolina State University, Chapel Hill, NC 27599-7575 (United States); Enculescu, M. [National Institute for Materials Physics, PO Box MG-7, Bucharest-Magurele (Romania); Chrisey, D.B. [Tulane University, Department of Physics and Engineering Physics, New Orleans, LA (United States)

    2013-08-01

    We report on thin film deposition by matrix assisted pulsed laser evaporation (MAPLE) of two polymer–drug composite thin film systems. A pulsed KrF* excimer laser source (λ = 248 nm, τ = 25 ns, ν = 10 Hz) was used to deposit composite thin films of poly(D,L-lactide) (PDLLA) containing several gentamicin concentrations. FTIR spectroscopy was used to demonstrate that MAPLE-transferred materials exhibited chemical structures similar to those of drop cast materials. Scanning electron microscopy data indicated that MAPLE may be used to fabricate thin films of good morphological quality. The activity of PDLLA–gentamicin composite thin films against Staphylococcus aureus bacteria was demonstrated using drop testing. The influence of drug concentration on microbial viability was also assessed. Our studies indicate that polymer–drug composite thin films prepared by MAPLE may be used to impart antimicrobial activity to implants, medical devices, and other contact surfaces.

  4. Fabrication and Characterization of Colloidal Crystal Thin Films

    Science.gov (United States)

    Rodriguez, I.; Ramiro-Manzano, F.; Meseguer, F.; Bonet, E.

    2011-01-01

    We present a laboratory experiment that allows undergraduate or graduate students to get introduced to colloidal crystal research concepts in an interesting way. Moreover, such experiments and studies can also be useful in the field of crystallography or solid-state physics. The work concerns the growth of colloidal crystal thin films obtained…

  5. Fabrication and Characterization of Colloidal Crystal Thin Films

    Science.gov (United States)

    Rodriguez, I.; Ramiro-Manzano, F.; Meseguer, F.; Bonet, E.

    2011-01-01

    We present a laboratory experiment that allows undergraduate or graduate students to get introduced to colloidal crystal research concepts in an interesting way. Moreover, such experiments and studies can also be useful in the field of crystallography or solid-state physics. The work concerns the growth of colloidal crystal thin films obtained…

  6. Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Junghwan, E-mail: JH.KIM@lucid.msl.titech.ac.jp; Miyokawa, Norihiko; Ide, Keisuke [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Toda, Yoshitake [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama (Japan)

    2016-01-15

    We propose a light-emitting thin film using an amorphous oxide semiconductor (AOS) because AOS has low defect density even fabricated at room temperature. Eu-doped amorphous In-Ga-Zn-O thin films fabricated at room temperature emitted intense red emission at 614 nm. It is achieved by precise control of oxygen pressure so as to suppress oxygen-deficiency/excess-related defects and free carriers. An electronic structure model is proposed, suggesting that non-radiative process is enhanced mainly by defects near the excited states. AOS would be a promising host for a thin film phosphor applicable to flexible displays as well as to light-emitting transistors.

  7. Fabrication of organic-inorganic perovskite thin films for planar solar cells via pulsed laser deposition

    Science.gov (United States)

    Liang, Yangang; Yao, Yangyi; Zhang, Xiaohang; Hsu, Wei-Lun; Gong, Yunhui; Shin, Jongmoon; Wachsman, Eric D.; Dagenais, Mario; Takeuchi, Ichiro

    2016-01-01

    We report on fabrication of organic-inorganic perovskite thin films using a hybrid method consisting of pulsed laser deposition (PLD) of lead iodide and spin-coating of methylammonium iodide. Smooth and highly crystalline CH3NH3PbI3 thin films have been fabricated on silicon and glass coated substrates with fluorine doped tin oxide using this PLD-based hybrid method. Planar perovskite solar cells with an inverted structure have been successfully fabricated using the perovskite films. Because of its versatility, the PLD-based hybrid fabrication method not only provides an easy and precise control of the thickness of the perovskite thin films, but also offers a straightforward platform for studying the potential feasibility in using other metal halides and organic salts for formation of the organic-inorganic perovskite structure.

  8. Fabrication of organic-inorganic perovskite thin films for planar solar cells via pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Yangang; Zhang, Xiaohang; Gong, Yunhui; Shin, Jongmoon; Wachsman, Eric D.; Takeuchi, Ichiro, E-mail: takeuchi@umd.edu [Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20740 (United States); Yao, Yangyi; Hsu, Wei-Lun; Dagenais, Mario [Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20740 (United States)

    2016-01-15

    We report on fabrication of organic-inorganic perovskite thin films using a hybrid method consisting of pulsed laser deposition (PLD) of lead iodide and spin-coating of methylammonium iodide. Smooth and highly crystalline CH{sub 3}NH{sub 3}PbI{sub 3} thin films have been fabricated on silicon and glass coated substrates with fluorine doped tin oxide using this PLD-based hybrid method. Planar perovskite solar cells with an inverted structure have been successfully fabricated using the perovskite films. Because of its versatility, the PLD-based hybrid fabrication method not only provides an easy and precise control of the thickness of the perovskite thin films, but also offers a straightforward platform for studying the potential feasibility in using other metal halides and organic salts for formation of the organic-inorganic perovskite structure.

  9. Fabrication of organic-inorganic perovskite thin films for planar solar cells via pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    Yangang Liang

    2016-01-01

    Full Text Available We report on fabrication of organic-inorganic perovskite thin films using a hybrid method consisting of pulsed laser deposition (PLD of lead iodide and spin-coating of methylammonium iodide. Smooth and highly crystalline CH3NH3PbI3 thin films have been fabricated on silicon and glass coated substrates with fluorine doped tin oxide using this PLD-based hybrid method. Planar perovskite solar cells with an inverted structure have been successfully fabricated using the perovskite films. Because of its versatility, the PLD-based hybrid fabrication method not only provides an easy and precise control of the thickness of the perovskite thin films, but also offers a straightforward platform for studying the potential feasibility in using other metal halides and organic salts for formation of the organic-inorganic perovskite structure.

  10. Fabrication of superhydrophobic niobium pentoxide thin films by anodization

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Bong-Yong [Future Convergence Ceramic Division, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801 (Korea, Republic of); Jung, Eun-Hye [Future Convergence Ceramic Division, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801 (Korea, Republic of); Department of Chemical Engineering, Inha University, Incheon 402-024 (Korea, Republic of); Kim, Jin-Ho, E-mail: jhkim@kicet.re.kr [Electronic and Optic Materials Division, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801 (Korea, Republic of)

    2014-07-01

    We report a simple method to fabricate a niobium oxide film with a lotus-like micro–nano surface structure. Self-assembled niobium pentoxide (Nb{sub 2}O{sub 5}) films with superhydrophobic property were fabricated by an anodization and a hydrophobic treatment. This process has several advantages such as low cost, simplicity and easy coverage of a large area. The surface of fabricated Nb{sub 2}O{sub 5} film was changed from hydrophilic to superhydrophobic surface by a treatment using fluoroaldyltrimethoxysilane (FAS) solution. This value is considered to be the lowest surface free energy of any solid, based on the alignment of -CF{sub 3} groups on the surface. In particular, among FAS coated surfaces, the micro–nano complex cone structured Nb{sub 2}O{sub 5} film showed the highest water-repellent property with a static contact angle of ca. 162°. This study gives promising routes from biomimetic superhydrophobic surfaces.

  11. Mechanical Stress Measurement During Thin-Film Fabrication

    Science.gov (United States)

    Broadway, David M. (Inventor)

    2017-01-01

    A method and system are provided for determining mechanical stress experienced by a film during fabrication thereof on a substrate positioned in a vacuum deposition chamber. The substrate's first surface is disposed to have the film deposited thereon and the substrate's opposing second surface is a specular reflective surface. A portion of the substrate is supported. An optical displacement sensor is positioned in the vacuum deposition chamber in a spaced-apart relationship with respect to a portion of the substrate's second surface. During film deposition on the substrate's first surface, displacement of the portion of the substrate's second surface is measured using the optical displacement sensor. The measured displacement is indicative of a radius of curvature of the substrate, and the radius of curvature is indicative of mechanical stress being experienced by the film.

  12. NiCr thin film strain gauges fabricated on glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Danisman, Murat [Yildiz Technical Univ., Istanbul (Turkey). Metallurgical and Engineering Dept.; Cansever, Nurhan [Gedik Univ., Istanbul (Turkey). Electronic Engineering Dept.

    2013-10-01

    In order to investigate the strain gauge characteristics of NiCr thin films, 500 nm NiCr (80 wt.-% and 20 wt.-%, respectively) thin films were deposited on glass substrates by DC magnetron sputtering. After deposition, NiCr thin films were characterized by using X-Ray diffraction analysis, scanning electron microscope and four-point probe techniques inview of crystallization, phases, film structure and electrical resistivity. After characterization, NiCr thin films were shaped into strain gauges by photo lithography and wet etching techniques. Strain gauges were tested with different loads, and strain values were calculated by comparing the results with commercial NiCr strain gauges with the same surface area. Resistivity change vs. strain was plotted, and the gauge factor of fabricated thin film strain gauges was evaluated as 1.23. (orig.)

  13. Nanoporous Thin Film Templates for the Fabrication of Nanowires and Nanotubes

    DEFF Research Database (Denmark)

    Bordo, Kirill

    2011-01-01

    of nanowires or nanotubes are obtained. Such arrays can be subsequently integrated into e.g. solar cells and other electronic devices. This thesis is focused on the fabrication of thin-film porous anodic alumina (PAA) templates on different substrates. The fabrication of organic nanowires and nanotubes via....... The prepared thin-film PAA templates were directly used for the fabrication of poly(3-hexylthiophene) (P3HT) nanotubes by means of melt-assisted wetting. Different architectures of solar cells based on P3HT nanotube arrays and thin films of PCBM were considered. Additionally, 1D nanostructures from P3HT, poly......The method of template wetting allows one to fabricate highly ordered arrays of upright standing nanowires or nanotubes from different materials in a controllable manner. In this method, a porous template is filled by an appropriate solution or melt. After selective removal of the template, arrays...

  14. Fabrication of nanostructured Al-doped ZnO thin film for methane sensing applications

    Science.gov (United States)

    Shafura, A. K.; Sin, N. D. Md.; Azhar, N. E. I.; Saurdi, I.; Uzer, M.; Mamat, M. H.; Shuhaimi, A.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2016-07-01

    CH4 gas sensor was fabricated using spin-coating method of the nanostructured ZnO thin film. Effect of annealing temperature on the electrical and structural properties of the film was investigated. Dense nanostructured ZnO film are obtained at higher annealing temperature. The optimal condition of annealing temperature is 500°C which has conductivity and sensitivity value of 3.3 × 10-3 S/cm and 11.5%, respectively.

  15. Characterization of Ag nanostructures fabricated by laser-induced dewetting of thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nikov, Ru.G., E-mail: rumen_nikov24@abv.bg [Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Nedyalkov, N.N.; Atanasov, P.A. [Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Hirsch, D.; Rauschenbach, B. [Leibniz Institute of Surface Modification (IOM), 15 Permoserstrasse, D-04318 Leipzig (Germany); Grochowska, K.; Sliwinski, G. [Centre for Plasma and Laser Engineering, The Szewalski Institute, Polish Academy of Sciences, 14 Fiszera St., 80-231 Gdansk (Poland)

    2016-06-30

    Highlights: • Laser processing of Ag films produces nanoparticles with narrow size distribution. • The parameters of the nanoparticle array depend on the environment at annealing. • Raman analysis indicates that the fabricated structures can be used in SERS. - Abstract: The paper presents results on laser nanostructuring of Ag thin films. The thin films are deposited on glass substrates by pulsed laser deposition technology. The as fabricated films are then annealed by nanosecond laser pulses delivered by Nd:YAG laser system operated at λ = 355 nm. The film modification is studied as a function of the film thickness and the parameters of the laser irradiation as pulse number and laser fluence. In order to estimate the influence of the environment on the characteristics of the fabricated structures the Ag films are annealed in different surrounding media: water, air and vacuum. It is found that at certain conditions the laser treatment may lead to decomposition of the films into a monolayer of nanoparticles with narrow size distribution. The optical properties of the fabricated nanostructures are investigated on the basis of transmission spectra taken by optical spectrometer. In the measured spectra plasmon resonance band is observed as its shape and position vary depending on the processing conditions. The fabricated structures are covered with Rhodamine 6G and tested as active substrates for Surface Enhanced Raman Spectroscopy (SERS).

  16. Fabrication and optical properties of SnS thin films by SILAR method

    Science.gov (United States)

    Ghosh, Biswajit; Das, Madhumita; Banerjee, Pushan; Das, Subrata

    2008-08-01

    Although the fabrication of tin disulfide thin films by SILAR method is quiet common, there is, however, no report is available on the growth of SnS thin film using above technique. In the present work, SnS films of 0.20 μm thickness were grown on glass and ITO substrates by SILAR method using SnSO 4 and Na 2S solution. The as-grown films were smooth and strongly adherent to the substrate. XRD confirmed the deposition of SnS thin films. Scanning electron micrograph revealed almost equal distribution of the particle size well covered on the surface of the substrate. EDAX showed that as-grown SnS films were slightly rich in tin component while UV-vis transmission spectra exhibited high absorption in the visible region. The intense and sharp emission peaks at 680 and 825 nm (near band edge emission) dominated the photoluminescence spectra.

  17. Fabrication and optical properties of SnS thin films by SILAR method

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Biswajit; Das, Madhumita; Banerjee, Pushan [Advanced Materials and Solar Photovoltaic Division, School of Energy Studies, Raja S.C. Mullick Road, Jadavpur University, Kolkata 700032 (India); Das, Subrata [Advanced Materials and Solar Photovoltaic Division, School of Energy Studies, Raja S.C. Mullick Road, Jadavpur University, Kolkata 700032 (India)], E-mail: neillohit@yahoo.co.in

    2008-08-15

    Although the fabrication of tin disulfide thin films by SILAR method is quiet common, there is, however, no report is available on the growth of SnS thin film using above technique. In the present work, SnS films of 0.20 {mu}m thickness were grown on glass and ITO substrates by SILAR method using SnSO{sub 4} and Na{sub 2}S solution. The as-grown films were smooth and strongly adherent to the substrate. XRD confirmed the deposition of SnS thin films. Scanning electron micrograph revealed almost equal distribution of the particle size well covered on the surface of the substrate. EDAX showed that as-grown SnS films were slightly rich in tin component while UV-vis transmission spectra exhibited high absorption in the visible region. The intense and sharp emission peaks at 680 and 825 nm (near band edge emission) dominated the photoluminescence spectra.

  18. Rapid fabrication of hierarchically structured supramolecular nanocomposite thin films in one minute

    Science.gov (United States)

    Xu, Ting; Kao, Joseph

    2016-11-08

    Functional nanocomposites containing nanoparticles of different chemical compositions may exhibit new properties to meet demands for advanced technology. It is imperative to simultaneously achieve hierarchical structural control and to develop rapid, scalable fabrication to minimize degradation of nanoparticle properties and for compatibility with nanomanufacturing. The assembly kinetics of supramolecular nanocomposite in thin films is governed by the energetic cost arising from defects, the chain mobility, and the activation energy for inter-domain diffusion. By optimizing only one parameter, the solvent fraction in the film, the assembly kinetics can be precisely tailored to produce hierarchically structured thin films of supramolecular nanocomposites in approximately one minute. Moreover, the strong wavelength dependent optical anisotropy in the nanocomposite highlights their potential applications for light manipulation and information transmission. The present invention opens a new avenue in designing manufacture-friendly continuous processing for the fabrication of functional nanocomposite thin films.

  19. Rapid fabrication of hierarchically structured supramolecular nanocomposite thin films in one minute

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Ting; Kao, Joseph

    2016-11-08

    Functional nanocomposites containing nanoparticles of different chemical compositions may exhibit new properties to meet demands for advanced technology. It is imperative to simultaneously achieve hierarchical structural control and to develop rapid, scalable fabrication to minimize degradation of nanoparticle properties and for compatibility with nanomanufacturing. The assembly kinetics of supramolecular nanocomposite in thin films is governed by the energetic cost arising from defects, the chain mobility, and the activation energy for inter-domain diffusion. By optimizing only one parameter, the solvent fraction in the film, the assembly kinetics can be precisely tailored to produce hierarchically structured thin films of supramolecular nanocomposites in approximately one minute. Moreover, the strong wavelength dependent optical anisotropy in the nanocomposite highlights their potential applications for light manipulation and information transmission. The present invention opens a new avenue in designing manufacture-friendly continuous processing for the fabrication of functional nanocomposite thin films.

  20. Relationships between Lead Halide Perovskite Thin-Film Fabrication, Morphology, and Performance in Solar Cells.

    Science.gov (United States)

    Sharenko, Alexander; Toney, Michael F

    2016-01-20

    Solution-processed lead halide perovskite thin-film solar cells have achieved power conversion efficiencies comparable to those obtained with several commercial photovoltaic technologies in a remarkably short period of time. This rapid rise in device efficiency is largely the result of the development of fabrication protocols capable of producing continuous, smooth perovskite films with micrometer-sized grains. Further developments in film fabrication and morphological control are necessary, however, in order for perovskite solar cells to reliably and reproducibly approach their thermodynamic efficiency limit. This Perspective discusses the fabrication of lead halide perovskite thin films, while highlighting the processing-property-performance relationships that have emerged from the literature, and from this knowledge, suggests future research directions.

  1. Nano-sized Thin Films Fabricated by Ion Beam Sputtering and Its Properties

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Nanoscale thick amorphous Ni-Cr alloy thin films were fabricated by low-energy ion beam sputtering technology; then the as-deposited samples experienced rapid thermal process to realize the transformation from amorphous to crystalline state. The film thickness was measured with α-stylus surface profiler, the structure and the compositions of the films were confirmed by low angle X-ray diffraction and scanning auger electron microprobe respectively, and the surface topography was characterized by scanning electron microscope and scanning probe microscope. Electrical property of the films was measured by fourpoint probe. The experimental results illustrate that the combined processes of ion beam sputtering and rapid thermal process are effective for fabrication nanoscale Ni-Cr alloy thin film with good properties.

  2. Fabrication and properties of SmFe2-PZT magnetoelectric thin films

    KAUST Repository

    Giouroudi, Ioanna

    2013-05-17

    Magnetoelectric (ME) thin film composites are attracting a continually increasing interest due to their unique features and potential applications in multifunctional microdevices and integrated units such as sensors, actuators and energy harvesting modules. By combining piezoelectric and highly magnetostrictive thin films, the potentialities of these materials increase. In this paper we report the fabrication of SmFe2 and PZT thin films and the investigation of their properties. First of all, a ~ 400 nm thin SmFe film was deposited on top of Si/SiO2 substrate by magnetron sputter deposition. Afterwards, a 140 nm Pt bottom electrode was sputtered on top of the SmFe film forming a bottom electrode. Spin coating was employed for the deposition of the 150 nm thin PZT layer. A PZT solution with 10 %Pb excess was utilized for this fabrication step. Finally, circular Pt top electrodes were sputtered as top electrodes. This paper focuses on the microstructure of the individual films characterized by X-Ray diffractometer (XRD) and scanning electron microscopy (SEM). A piezoelectric evaluation system, aixPES, with TF2000E analyzer component was used for the electric hysteresis measurements of PZT thin films and a vibrating sample magnetometer (VSM) was employed for the magnetic characterization of the SmFe. The developed thin films and the fabricated double layer SmFe-PZT exhibit both good ferromagnetic and piezoelectric responses which predict a promising ME composite structure. The quantitative chemical composition of the samples was confirmed by energy dispersive spectroscopy (EDX). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  3. Fabrication and biocompatibility in vitro of potassium titanate biological thin film/titanium alloy biological composite

    Institute of Scientific and Technical Information of China (English)

    QI Yumin; HE Yun; CUI Chunxiang; LIU Shuangjin; WANG Huifen

    2007-01-01

    A potassium titanate biological thin film/titanium alloy biological composite was fabricated by way of bionic chemistry.The biocompatibility fn vitro of Ti-15Mo-3Nb and the potassium titanate biological thin film/titanium alloy was studied using simulated body fluid cultivation,kinetic clotting of blood and osteoblast cell cultivation experiments in vitro.By comparing the biological properties of both materials,the following conclusions can be obtained:(1)The deposition of a calcium phosphate layer was not found on the surface of Ti-15Mo-3Nb,so it was bioinert.Because the network of potassium titanate biological thin film could induce the deposition of a calcium phosphate layer,this showed that it had excellent bioactivity.(2)According to the values of kinetic clotting,the blood coagulation time of the potassium titanate biological thin film was more than that of Ti-15Mo-3Nb.It was obvious that the potassium titanate biological thin film possessed good hemocompatibility.(3)The cell compatibility of both materials was very good.However,the growth trend and multiplication of osteoblast cells on the surface of potassium titanate biological thin film was better,which made for the concrescence of wounds during the earlier period.As a result,the potassium titanate biological thin film/titanium alloy showed better biocompatibility and bioactivity.

  4. Fabrication and photoelectrocatalytic properties of nanocrystalline monoclinic BiVO4 thin-film electrode.

    Science.gov (United States)

    Zhou, Bin; Qu, Jiuhui; Zhao, Xu; Liu, Huijuan

    2011-01-01

    Monoclinic bismuth vanadate (BiVO4) thin film was fabricated on indium-tin oxide glass from an amorphous heteronuclear complex via dip-coating. After annealation at 400, 500, and 600 degrees C, the thin films were characterized by X-ray diffraction, field emission scanning electron microscopy, X-ray photoelectron spectroscopy, and UV-Vis spectrophotometry. The BiVO4 particles on the ITO glass surface had a monoclinic structure. The UV-Visible diffuse reflection spectra showed the BiVO4 thin film had photoabsorption properties, with a band gap around 2.5 eV. In addition, the thin film showed high visible photocatalytic activities towards 2,4-dichlorophenol and Bisphenol A degradation under visible light irradiation (lambda > 420 nm). Over 90% of the two organic pollutants were removed in 5 hr. A possible degradation mechanism of 2,4-dichlorophenol were also studied.

  5. Fabrication and photoelectrocatalytic properties of nanocrystalline monoclinic BiVO4 thin-film electrode

    Institute of Scientific and Technical Information of China (English)

    Bin Zhou; Jiuhui Qu; Xu Zhao; Huijuan Liu

    2011-01-01

    Monoclinic bismuth vanadate (BiVO4) thin film was fabricated on indium-tin oxide glass from an amorphous heteronuclear complex via dip-coating.After annealation at 400, 500, and 600℃, the thin films were characterized by X-ray diffraction, field emission scanning electron microscopy, X-ray photoelectron spectroscopy, and UV-Vis spectrophotometry.The BiVO4 particles on the ITO glass surface had a monoclinic structure.The UV-Visible diffuse reflection spectra showed the BiVO4 thin film had photoabsorption properties, with a band gap around 2.5 eV.In addition, the thin film showed high visible photocatalytic activities towards 2,4-dichiorophenol and Bisphenol A degradation under visible light irradiation (λ.> 420 nm).Over 90% of the two organic pollutants were removed in 5 hr.A possible degradation mechanism of 2,4-dichlorophenol were also studied.

  6. Fabrication and performance of organic thin film solar cells using a painting method

    Science.gov (United States)

    Ochiai, S.; Ishihara, H.; Mizutani, T.; Kojima, K.

    2010-05-01

    As organic thin film solar cells fabricated by the active layer of organic materials are economical, lightweight, and flexible, as well as generating no CO2, and being easy to fabricate, they have attracted significant attention as green energy sources from a past decade to date. Therefore, their power conversion efficiency (PCE) has been investigated and studied worldwide. In organic thinfilm solar cells, the effect of the performance depends not only on the adopted active material but also relates to the molecular orientation on the electrode. Using a mixed solution of Poly(3-hexylthiophene) and PCBM, both of which were dissolved in a solvent, the organic thin films were fabricated using the paint and spray methods, while the morphology of the thin film was evaluated by an AFM image, UV/vis spectra, and so forth. Based on these data, an organic thin-film solar cell using both solution methods for the active layer was fabricated, and the performance evaluated and examined. For organic thin film solar cells fabricated using a spin-coating method, the open-circuit voltage (Voc) is 0.41V, the short circuit current density (Jsc) is 2.07mA/cm2, and the fill factor is 0.34, while the efficiency η of PCE become 0.29%. In the spray method, the short circuit current (Isc) is 2.5 mA/cm2, the open circuit voltage (Voc) is 0.45 V, the fill factor (FF) is 0.28, and the power conversion factor (PCE) 0.35%. The area of organic solar cells fabricated by spin coating and spray methods is 1 cm2 respectively. The organic solar cells are not thermally treated, and hence have high respective power conversion efficiencies.

  7. Fabrication of solid-state thin-film batteries using LiMnPO{sub 4} thin films deposited by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fujimoto, Daichi [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan); Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Kuwata, Naoaki, E-mail: kuwata@tagen.tohoku.ac.jp [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan); Matsuda, Yasutaka; Kawamura, Junichi [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan); Kang, Feiyu [Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

    2015-03-31

    Solid-state thin-film batteries using LiMnPO{sub 4} thin films as positive electrodes were fabricated and the electrochemical properties were characterized. The LiMnPO{sub 4} thin films were deposited on Pt coated glass substrates by pulsed laser deposition. In-plane X-ray diffraction revealed that the LiMnPO{sub 4} thin films were well crystallized and may have a texture with a (020) orientation. The deposition conditions were optimized; the substrate temperature was 600 °C and the argon pressure was 100 Pa. The electrochemical measurements indicate that the LiMnPO{sub 4} films show charge and discharge peaks at 4.3 V and 4.1 V, respectively. The electrical conductivity of the LiMnPO{sub 4} film was measured by impedance spectroscopy to be 2 × 10{sup −11} S cm{sup −1} at room temperature. The solid-state thin-film batteries that show excellent cycle stability were fabricated using the LiMnPO{sub 4} thin film. Moreover, the chemical diffusion of the LiMnPO{sub 4} thin film was studied by cyclic voltammetry. The chemical diffusion coefficient of the LiMnPO{sub 4} thin film is estimated to be 3.0 × 10{sup −17} cm{sup 2} s{sup −1}, which is approximately four orders magnitude smaller than the LiFePO{sub 4} thin films, and the capacity of the thin-film battery was gradually increased for 500 cycles. - Highlights: • Olivine-type LiMnPO{sub 4} thin-films were fabricated by pulsed laser deposition. • The electrochemical properties were characterized by using solid-state thin-film batteries. • Chemical diffusion coefficient of LiMnPO{sub 4} thin film was estimated by cyclic voltammetry. • Thin-film batteries, Li/Li{sub 3}PO{sub 4}/LiMnPO{sub 4}, show excellent cycle stability up to 500 cycles.

  8. Thin films of porphyrin-perylene molecular array fabricated by electrophoresis methodology

    Institute of Scientific and Technical Information of China (English)

    SUN Jingzhi; YANG Xinguo; WANG Mang

    2005-01-01

    Thin solid films of organic conjugated molecules are at the center of organic electronics. Low solubility and high sublimation temperature of porphyrin-perylene arrays make it impossible to fabricate uniform solid films with spin-coating and vacuum deposition methodology, though these arrays have important applications in the area of opto-electronics. Here we show that high quality thin films of a porphyrin-perylene array can be prepared by electrochemical deposition, a facile and widely used film-forming technique. The electrophoretic species are protonated porphyrin-perylene molecules, which allow us to grow molecular array films on electrodes. By annealing in ammonia atmosphere or in vacuum at elevated temperature, the protons coordinated with molecular arrays on the deposited films can be eliminated and the porphyrin-perylene arrays recovered to their pristine state.

  9. Fabrication of DNA Microarrays on Polydopamine-Modified Gold Thin Films for SPR Imaging Measurements

    OpenAIRE

    Wood, Jennifer B.; Szyndler, Megan W.; Halpern, Aaron R.; Cho, Kyunghee; Corn, Robert M.

    2013-01-01

    Polydopamine (PDA) films were fabricated on thin film gold substrates in a single-step polymerization-deposition process from dopamine solutions and then employed in the construction of robust DNA microarrays for the ultra-sensitive detection of biomolecules with nanoparticle-enhanced surface plasmon resonance (SPR) imaging. PDA multilayers with thicknesses varying from 1 to 5 nm were characterized with a combination of scanning angle SPR and AFM experiments, and 1.3 ± 0.2 nm PDA multilayers ...

  10. MgB{sub 2} superconducting thin films sequentially fabricated using DC magnetron sputtering and thermionic vacuum arc method

    Energy Technology Data Exchange (ETDEWEB)

    Okur, S. [Physics Department, Izmir Institute of Technology (Turkey)], E-mail: salihokur@iyte.edu.tr; Kalkanci, M. [Material Science Program, Izmir Institute of Technology (Turkey); Pat, S.; Ekem, N.; Akan, T. [Physics Department, Osmangazi University (Turkey); Balbag, Z. [Department of Science and Mathematics Education, Osmangazi University (Turkey); Musa, G. [Plasma and Radiation, National Institute for Physics of Laser (Romania); Tanoglu, M. [Mechanical Engineering Department, Izmir Institute of Technology (Turkey)

    2007-11-01

    In this work, we discuss fabrication and characterization of MgB{sub 2} thin films obtained by sequential deposition and annealing of sandwich like Mg/B/Mg thin films on glass substrates. Mg and B films were prepared using DC magnetron sputtering and thermionic vacuum arc techniques, respectively. The MgB{sub 2} thin films showed superconducting critical transition at 33 K after annealing at 650 deg. C.

  11. Structures and properties of poly(3-alkylthiophene) thin-films fabricated though vapor-phase polymerization.

    Science.gov (United States)

    Back, Ji-Woong; Song, Eun-Ah; Lee, Keum-Joo; Lee, Youn-Kyung; Hwang, Chae-Ryong; Jo, Sang-Hyun; Jung, Woo-Gwang; Kim, Jin-Yeol

    2012-02-01

    Organic semiconducting polymer thin-films of 3-hexylthiophene, 3-octylthiophene, 3-decylthiophene, containing highly oriented crystal were fabricated by gas-phase polymerization using the CVD technique. These poly(3-alkylthiophene) films had a crystallinity up to 80%, and possessed a Hall mobility up to 10 cm2/Vs. The degree of crystalinity and the mobility values increased as the alkyl chain length increased. The crystal structure of the polymers was composed of stacked layers constructed by a side-by-side arrangement of alkyl chains and in-plane pi-pi stacking. These thin films are capable of being applied to organic electronics as the active materials used in thin-film transistors and organic photovoltaic cells.

  12. Fabrication of 3D Microfluidic Devices by Thermal Bonding of Thin Poly(methyl methacrylate) Films

    KAUST Repository

    Perez, Paul

    2012-07-01

    The use of thin-film techniques for the fabrication of microfluidic devices has gained attention over the last decade, particularly for three-dimensional channel structures. The reasons for this include effective use of chip volume, mechanical flexibility, dead volume reduction, enhanced design capabilities, integration of passive elements, and scalability. Several fabrication techniques have been adapted for use on thin films: laser ablation and hot embossing are popular for channel fabrication, and lamination is widely used for channel enclosure. However, none of the previous studies have been able to achieve a strong bond that is reliable under moderate positive pressures. The present work aims to develop a thin-film process that provides design versatility, speed, channel profile homogeneity, and the reliability that others fail to achieve. The three building blocks of the proposed baseline were fifty-micron poly(methyl methacrylate) thin films as substrates, channel patterning by laser ablation, and device assembly by thermal-fusion bonding. Channel fabrication was characterized and tuned to produce the desired dimensions and surface roughness. Thermal bonding was performed using an adapted mechanical testing device and optimized to produce the maximum bonding strength without significant channel deformation. Bonding multilayered devices, incorporating conduction lines, and integrating various types of membranes as passive elements demonstrated the versatility of the process. Finally, this baseline was used to fabricate a droplet generator and a DNA detection chip based on micro-bead agglomeration. It was found that a combination of low laser power and scanning speed produced channel surfaces with better uniformity than those obtained with higher values. In addition, the implemented bonding technique provided the process with the most reliable bond strength reported, so far, for thin-film microfluidics. Overall, the present work proved to be versatile

  13. Development of aerosol assisted chemical vapor deposition for thin film fabrication

    Science.gov (United States)

    Maulana, Dwindra Wilham; Marthatika, Dian; Panatarani, Camellia; Mindara, Jajat Yuda; Joni, I. Made

    2016-02-01

    Chemical vapor deposition (CVD) is widely used to grow a thin film applied in many industrial applications. This paper report the development of an aerosol assisted chemical vapor deposition (AACVD) which is one of the CVD methods. Newly developed AACVD system consists of a chamber of pyrex glass, two wire-heating elements placed to cover pyrex glass, a substrate holder, and an aerosol generator using an air brush sprayer. The temperature control system was developed to prevent condensation on the chamber walls. The control performances such as the overshoot and settling time were obtained from of the developed temperature controller. Wire-heating elements were controlled at certain setting value to heat the injected aerosol to form a thin film in the substrate. The performance of as-developed AACVD system tested to form a thin film where aerosol was sprayed into the chamber with a flow rate of 7 liters/minutes, and vary in temperatures and concentrations of precursor. The temperature control system have an overshoot around 25 °C from the desired set point temperature, very small temperature ripple 2 °C and a settling time of 20 minutes. As-developed AACVD successfully fabricated a ZnO thin film with thickness of below 1 µm. The performances of system on formation of thin films influenced by the generally controlled process such as values of setting temperature and concentration where the aerosol flow rate was fixed. Higher temperature was applied, the more uniform ZnO thin films were produced. In addition, temperature of the substrate also affected on surface roughness of the obtained films, while concentration of ZnO precursor determined the thickness of produce films. It is concluded that newly simple AACVD can be applied to produce a thin film.

  14. Fabrication, Electrical Characterization and Simulation of Thin Film Solar Cells: CdTe and CIGS Materials

    OpenAIRE

    Es'haghi Gorji, Nima

    2014-01-01

    CdTe and Cu(In,Ga)Se2 (CIGS) thin film solar cells are fabricated, electrically characterized and modelled in this thesis. We start from the fabrication of CdTe thin film devices where the R.F. magnetron sputtering system is used to deposit the CdS/CdTe based solar cells. The chlorine post-growth treatment is modified in order to uniformly cover the cell surface and reduce the probability of pinholes and shunting pathways creation which, in turn, reduces the series resistance. The deionized wat...

  15. Fabrication of CIGS thin films by using spray pyrolysis and post-selenization

    Science.gov (United States)

    Kim, Seong Yeon; Kim, JunHo

    2012-06-01

    We fabricated Cu(In1- x Ga x )Se2 ( x: 0 ˜ 0.4) thin films by using ultrasonic spray pyrolysis and post-selenization. First, we made Cu(In1- x Ga x )S2 ( x: 0 ˜ 0.4) films by ultrasonic spray pyrolysis under an air environment. Then, we converted as-sprayed Cu(In1- x Ga x )S2 (CIGS) films to Cu-(In1- x Ga x )Se2 (CIGSe) films through post-selenization. For all Ga fractions, the sprayed CIGS films were well recrystallized into poly-crystalline CIGSe films with a dominant (112) texture, which was confirmed by X-ray diffraction, Raman spectroscopy and energy dispersive X-ray analyses. This result indicates that CIGSe films with any amount of Ga substitution can be made by converting sprayed CIGS to CIGSe with post-selenization.

  16. Fabrication of β-CuGaO2 thin films by ion-exchange of β-NaGaO2 thin films

    Science.gov (United States)

    Suzuki, Issei; Nagatani, Hiraku; Kita, Masao; Omata, Takahisa

    2017-09-01

    β-CuGaO2 shows promise as an absorber material for use in thin-film solar cells because of its direct and narrow band gap, causing intense light absorption and high theoretical maximum conversion efficiency. β-CuGaO2 thin films were fabricated using an ion-exchange whereby Na+ ions within a sputtered β-NaGaO2 thin film were replaced with Cu+ ions from a CuCl vapor. The band gap of the film was 1.45 eV, almost identical to that of the bulk material. The basic framework of the crystal structure and the orientation of the film were preserved following the ion-exchange. Methods of obtaining high-quality, stoichiometric β-CuGaO2 thin films free of cracks are discussed.

  17. A Confined Fabrication of Perovskite Quantum Dots in Oriented MOF Thin Film.

    Science.gov (United States)

    Chen, Zheng; Gu, Zhi-Gang; Fu, Wen-Qiang; Wang, Fei; Zhang, Jian

    2016-10-10

    Organic-inorganic hybrid lead organohalide perovskites are inexpensive materials for high-efficiency photovoltaic solar cells, optical properties and superior electrical conductivity. However, the fabrication of their quantum dots (QDs) with uniform ultra-small particles is still a challenge. Here we use oriented microporous metal-organic framework (MOF) thin film prepared by liquid phase epitaxy approach as a template for CH3NH3PbI2X (X = Cl, Br and I) perovskite QDs fabrication. By introducing the PbI2 and CH3NH3X (MAX) precursors into MOF HKUST-1 (Cu3(BTC)2, BTC = 1,3,5-benzene tricarboxylate) thin film in a stepwise approach, the resulted perovskite MAPbI2X (X = Cl, Br and I) QDs with uniform diameters of 1.5~2 nm match to the pore size of HKUST-1. Furthermore, the photoluminescent properties and stability in the moist air of the perovskite QDs loaded HKUST-1 thin film were studied. This confined fabrication strategy demonstrates that the perovskite QDs loaded MOF thin film will be insensitive to air exposure and offers a novel means of confining the uniform size of the similar perovskite QDs according to the oriented porous MOF materials.

  18. The fabrication and characterization of nano-SQUIDs based on Nb thin films

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xixi; Liu, Xiaoyu; Wang, Hao; Chen, Lei, E-mail: leichen@mail.sim.ac.cn; Wang, Zhen

    2015-08-15

    Highlights: • We developed a nano-SQUID fabrication process starting from a high-quality thin film. • The fabricated nano-SQUIDs exhibited flux modulation depth up to 10.3% at 4.6 K. • The measured data agreed with the Ginzburg–Landau simulation. • We found that a small critical current <50 μA is important for a deep flux modulation. • The suggestions in improving the nano-SQUID’s performance were discussed. - Abstract: SQUIDs with nano-junctions (or nano-SQUIDs) are able to be miniaturized into nanoscale to measure a single Bohr magneton. Here, we reported the development of a fabrication process for Nb (niobium) nano-SQUIDs using the thin film deposition and the electron-beam lithography technology. The developed process started from a high-quality superconducting thin film so that it is compatible with a variety of film growing techniques. The as-fabricated nano-SQUIDs exhibited functional flux modulation depth up to 10.3% at 4.6 K, in agreement with the numerical simulation based on the Ginzburg–Landau equation. By further comparing the results from both experiments and simulations, we found that a small critical current below ∼50 μA played a leading role in order to obtain a decent flux-modulation depth for Nb nano-SQUIDs.

  19. Additive fabrication of microstructures using self-assembled organic thin-film templates

    Science.gov (United States)

    Jeon, Noo Li

    A novel approach to thin film patterning is described in this thesis: printed self-assembled monolayers (SAMs) were used as a template for the selective deposition of metal and ceramic thin films. In contrast to the conventional subtractive patterning processes involving photolithography and reactive ion etching, thin films were patterned in an additive manner with two or three maskless (photolithography-free) steps. First, SAMs of octadecyltrichlorosilane (OTS) were patterned by microcontact printing (muCP) with sub-micron to centimeter resolution on a variety of substrates such as SiOsb2/Si, TiN, indium tin oxide, plasma modified polyimide, and sapphire. The patterned SAMs allow manipulation of such surface properties as adsorption, wetting, and adhesion which are used for the selective deposition of thin films via a chemical route. The microcontact printed OTS SAMs were characterized with reflection absorption infrared spectroscopy (RAIRS), x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and scanning electron microscopy (SEM). It was found that after 30s of microcontact printing (using 10 mM OTS solution in hexane), well oriented and fully covered SAMs are formed. These monolayers are chemically and thermally robust enough to withstand the CVD and sol-gel processing conditions. Effects of such processing variables as concentration of OTS, substrate, moisture, and duration of contact on the structure of the OTS films were also studied. Thin films of metals such as copper, palladium, and platinum (by chemical vapor deposition, CVD) and of ceramics such as LiNbOsb3, Pb(Zr,Ti)Osb3 (PZT), Tasb2Osb5 and (Pb,La)TiOsb3 (PLT) (from corresponding sol-gel precursors) were selectively deposited on surfaces modified with OTS SAMs by microcontact printing. This thesis discusses several examples of microstructures of copper, palladium, and platinum fabricated by selective CVD, including the fabrication of thin-film interconnects (with line widths of 0

  20. Thermally evaporated methylammonium tin triiodide thin films for lead-free perovskite solar cell fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Yue; Zhao, Dewei; Grice, Corey R.; Meng, Weiwei; Wang, Changlei; Liao, Weiqiang; Cimaroli, Alexander J.; Zhang, Hongmei; Zhu, Kai; Yan, Yanfa

    2016-01-01

    We report on the synthesis of methylammonium tin triiodide (MASnI3) thin films at room temperature by a hybrid thermal evaporation method and their application in fabricating lead (Pb)-free perovskite solar cells. The as-deposited MASnI3 thin films exhibit smooth surfaces, uniform coverage across the entire substrate, and strong crystallographic preferred orientation along the <100> direction. By incorporating this film with an inverted planar device architecture, our Pb-free perovskite solar cells are able to achieve an open-circuit voltage (Voc) up to 494 mV. The relatively high Voc is mainly ascribed to the excellent surface coverage, the compact morphology, the good stoichiometry control of the MASnI3 thin films, and the effective passivation of the electron-blocking and hole-blocking layers. Our results demonstrate the potential capability of the hybrid evaporation method to prepare high-quality Pb-free MASnI3 perovskite thin films which can be used to fabricate efficient Pb-free perovskite solar cells.

  1. Doping-free fabrication of silicon thin films for schottky solar cell.

    Science.gov (United States)

    Yun, Ju-Hyung; Park, Yun Chang; Yi, Junsin; Woo, Chang Su; Kim, Joondong

    2012-02-01

    Thin film Schottky solar cells were fabricated without doping processes, which may provide an alternative approach to the conventional thin film solar cells in the n-i-p configuration. A thin Co layer was coated on a substrate, which worked as a back contact metal and then Si film was grown above it. Deposition condition may modulate the Si film structure to be a fully amorphous Si (a-Si) or a mixing of microcrystalline Si (mc-Si) and a-Si. A thin Au layer was deposited above the grown Si films, which formed a Schottky junction. Two types of Schottky solar cells were prepared on a fully a-Si film and a mixing of mc-Si and a-Si film. Under one sun illumination, the mixing of mc-Si and a-Si device provided 35% and 68.4% enhancement in the open circuit voltage and fill factor compared to that of the amorphous device.

  2. Fabrication and characterization of borocarbide thin films grown by in-situ process

    CERN Document Server

    Arisawa, S; Togano, K

    1999-01-01

    We have reported on the fabrication of thin films of YNi sub 2 B sub 2 C for the first time. The process, however, requires the post-annealing at 1050 .deg. C. It is preferable to avoid such a high temperature for practical device applications and we are aiming at establishing an in-situ process at lower temperatures. To obtain films with higher T sub c , it is very important to know the relationship between what we choose as substrates and what we get on them. Three kinds of substrates, polished MgO, unpolished MgO, and polished SrTiO sub 3 were adopted. As for former 2 kinds of substates, superconductive films were successfully fabricated with the T sub c of approx 11K. Further, we discuss the fabrication of thin films of YPd sub 2 B sub 2 C on SrTiO sub 3 substrate. We tried to synthesize the films of the Pd system by RF sputtering technique as well. So far, it is uncertain whether or not the 1221 phase exists in the films. However, the slight reduction of the resistance was observed at 23 K, which is almo...

  3. Fabrication and Characteristics of Thin Film Bulk Acoustic Resonators with Highly c-Axis Oriented AlN Films

    Institute of Scientific and Technical Information of China (English)

    GU Hao-Shuang; ZHANG Kai; HU Guang; LI Wei-Yong

    2006-01-01

    @@ Thin film bulk acoustic resonators are fabricated by using silicon bulk micromachining technology, which are constructed mainly from aluminium nitride (AlN) piezoelectric films. The results of x-ray diffraction, scanning electron microscopy and atomic force microscopy show that the AlN films exhibit highly c-axis orientation with good surface morphology. The resonators with the AlN films possessed a reflection coefficient -10.6 dB at the resonant frequency 2.537 GHz, an effective electromechanical coupling coefficient 3.75%, series quality 101.8, and parallel quality 79.7.

  4. Fabrication of semi-transparent superoleophobic thin film from fabrics and nanoparticle-based hierarchical structure

    OpenAIRE

    Nishizawa S.; Shiratori S.

    2013-01-01

    Superoleophobic thin films have many potential applications including fluid transfer, fluid power systems, stain resistant and antifouling materials, and microfluidics among others. Transparency is also desired with superhydrophobicity for their numerous applications; however transparency and oleophobicity are almost incompatible relationship with each other in the point of surface structure. Because oleophobicity required rougher structure at nano-micro scale than hydrophobicity, and these r...

  5. Electric properties of La-modified lead titanate thin films fabricated by sol-gel processing

    Energy Technology Data Exchange (ETDEWEB)

    Hyun, June Won; Kim, Gang Bae [Dankook Univ., Chonan (Korea, Republic of)

    2003-01-01

    Ferroelectric lead lanthanum titanate (PLT) thin films were fabricated by sol-gel processing and spin-coating on Pt substrates. The electric properties and the microstructure were studied by changing the La content from 18 to 28 mol%. The X-ray diffraction patterns showed that the PLT films sintered at 650 .deg. C for 30 min were crystallized with a stable perovskite structure. The dielectric constant of PLT films increased with addition of La content up to 21 mol%, and then decreased with La content up to 28 mol% at room temperature. The remanent polarization, coercive field, and leakage current density of the PLT thin films decreased with increasing La content. The fatigue property did not change significantly as the number of switching cycles was increased.

  6. Characterization of piesoelectric ZnO thin films and the fabrication of piezoelectric micro-cantilevers

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Raegan Lynn [Iowa State Univ., Ames, IA (United States)

    2005-01-01

    In Atomic Force Microscopy (AFM), a microcantilever is raster scanned across the surface of a sample in order to obtain a topographical image of the sample's surface. In a traditional, optical AFM, the sample rests on a bulk piezoelectric tube and a control loop is used to control the tip-sample separation by actuating the piezo-tube. This method has several disadvantages--the most noticeable one being that response time of the piezo-tube is rather long which leads to slow imaging speeds. One possible solution aimed at improving the speed of imaging is to incorporate a thin piezoelectric film on top of the cantilever beam. This design not only improves the speed of imaging because the piezoelectric film replaces the piezo-tube as an actuator, but the film can also act as a sensor. In addition, the piezoelectric film can excite the cantilever beam near its resonance frequency. This project aims to fabricate piezoelectric microcantilevers for use in the AFM. Prior to fabricating the cantilevers and also part of this project, a systematic study was performed to examine the effects of deposition conditions on the quality of piezoelectric ZnO thin films deposited by RF sputtering. These results will be presented. The deposition parameters that produced the highest quality ZnO film were used in the fabrication of the piezoelectric cantilevers. Unfortunately, the fabricated cantilevers warped due to the intrinsic stress of the ZnO film and were therefore not usable in the AFM. The complete fabrication process will be detailed, the results will be discussed and reasons for the warping will be examined.

  7. Thin film polycrystalline silicon photoelectric converter and fabricating method; Hakumaku takkesho shirikon koden henkan sochi oyobi sono seizo hoho

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, K. [Kobe (Japan); Suzuki, T. [Kobe (Japan); Yoshimi, M. [Kobe (Japan)

    1995-04-07

    This invention relates to a fabricating method for a thin film polycrystalline silicon photoelectric converter which has a large area and can be produced at low cost. Successive formation of mono-conductive polycrystalline silicon thin film and reverse conducting polycrystalline silicon thin film on a translucent substrate requires no vapor phase epitaxial growth, and the film formation temperature for silicon thin film can be lowered. Orientation of the monocrystalline silicon thin film to any of the surface bearings of (100), (111), and (110) results in the function of determining the orientation of the reverse conducting polycrystalline silicon thin film formed thereon. This orientation is effective to obtain excellent characteristics, and results in effective surface orientation of the entire power generating area. In addition, the supporting substrate and the surface protective film of the solar cell can be combined by orienting the translucent substrate side to the light incident side. 2 figs., 1 tab.

  8. Fabrication of thermally evaporated Al thin film on cylindrical PET monofilament for wearable computing devices

    Science.gov (United States)

    Liu, Yang; Kim, Eunju; Han, Jeong In

    2016-01-01

    During the initial development of wearable computing devices, the conductive fibers of Al thin film on cylindrical PET monofilament were fabricated by thermal evaporation. Their electrical current-voltage characteristics curves were excellent for incorporation into wearable devices such as fiber-based cylindrical capacitors or thin film transistors. Their surfaces were modified by UV exposure and dip coating of acryl or PVP to investigate the surface effect. The conductive fiber with PVP coating showed the best conductivities because the rough surface of the PET substrate transformed into a smooth surface. The conductivities of PET fiber with and without PVP were 6.81 × 103 Ω-1cm-1 and 5.62 × 103 Ω-1cm-1, respectively. In order to understand the deposition process of Al thin film on cylindrical PET, Al thin film on PET fiber was studied using SEM (Scanning Electron Microscope), conductivities and thickness measurements. Hillocks on the surface of conductive PET fibers were observed and investigated by AFM on the surface. Hillocks were formed and grown during Al thermal evaporation because of severe compressive strain and plastic deformation induced by large differences in thermal expansion between PET substrate and Al thin film. From the analysis of hillock size distribution, it turns out that hillocks grew not transversely but longitudinally. [Figure not available: see fulltext.

  9. Pulsed laser deposition of silicon dioxide thin films with silicone targets for fabricating waveguide devices

    Science.gov (United States)

    Okoshi, Masayuki; Kuramatsu, Masaaki; Inoue, Narumi

    2002-06-01

    Silicon dioxide (SiO2) thin films were deposited at room temperature by 193-nm ArF excimer laser ablation of silicone in oxygen atmosphere. Only the side chains of the target were photo-dissociated during ablation to deposit Si-O bonds on a substrate in high laser fluence at about 10 J/cm2. Oxygen gas worked to oxidize the Si-O bonds ejected from the target to from SiO2 thin films at the gas pressure of 4.4 X 10-2 Torr, in addition to reducing the isolated carbon mixed into the films. We also found that the deposited rate could control refractive index of the films. The refractive index of the film deposited at 0.05 nm/pulse is greater than that of the film at 0.1 nm/pulse. Thus, a 0.2-micrometers thick SiO2 cladding film deposited at 0.1 nm/pulse was firstly formed on the whole surface of a 100- micrometers -thick polyester film, and then a 0.6 micrometers -thick SiO2 core film at 0.05 nm/pulse was fabricated in a line on the sample. The sample functioned as a waveguide device for a 633-nm line of He-Ne laser.

  10. A new strategy to fabricate composite thin films with tunable micro- and nanostructures via self-assembly of block copolymers.

    Science.gov (United States)

    Zhao, Xingjuan; Wang, Qian; Lee, Yong-Ill; Hao, Jingcheng; Liu, Hong-Guo

    2015-12-04

    A new and facile strategy to fabricate composite thin films with tunable morphologies via self-assembly of block copolymer molecules at the air/liquid interface is first reported. The morphologies (parallel nanowires and foams) of these freestanding thin films can be tuned by varying the molecular structure or other experimental conditions.

  11. Design and fabrication of a MEMS Lamb wave device based on ZnO thin film

    Energy Technology Data Exchange (ETDEWEB)

    Liu Mengwei; Li Junhong; Ma Jun; Wang Chenghao, E-mail: liumw@mail.ioa.ac.cn [Institute of Acoustics, Chinese Academy of Sciences, Beijing 100190 (China)

    2011-04-15

    This paper presents the design and fabrication of a Lamb wave device based on ZnO piezoelectric film. The Lamb waves were respectively launched and received by both Al interdigital transducers. In order to reduce the stress of the thin membrane, the ZnO/Al/LTO/Si{sub 3}N{sub 4}/Si multilayered thin plate was designed and fabricated. A novel method to obtain the piezoelectric constant of the ZnO film was used. The experimental results for characterizing the wave propagation modes and their frequencies of the Lamb wave device indicated that the measured center frequency of antisymmetric A{sub 0} and symmetric S{sub 0} modes Lamb wave agree with the theoretical predictions. The mass sensitivity of the MEMS Lamb wave device was also characterized for gravimetric sensing application. (semiconductor devices)

  12. High quality YBCO superconductive thin films fabricated by laser molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    High quality YBa2Cu3O6+x (YBCO) superconductive thin films have been fabricated on the SrTiO3(100) substrate using laser molecular beam epitaxy (laser-MBE).The active oxygen source was used,which made the necessary ambient oxygen pressure be 2-3 orders lower than that in pulsed laser deposition (PLD).Tc0 is 85-87 K,and Jc~1.0×106 A/cm2.Atomic force microscopy (AFM) measurements show that no obvious particulates can be observed and the root mean square roughness is 7.8 nm.High stability DC superconducting quantum interference devices (DC-SQUID) was fabricated using this YBCO thin film.

  13. Design and fabrication of a MEMS Lamb wave device based on ZnO thin film*

    Institute of Scientific and Technical Information of China (English)

    Liu Mengwei; Li Junhong; Ma Jun; Wang Chenghao

    2011-01-01

    This paper presents the design and fabrication of a Lamb wave device based on ZnO piezoelectric film.The Lamb waves were respectively launched and received by both Al interdigital transducers. In order to reduce the stress of the thin membrane, the ZnO/A1/LTO/Si3N4/Si multilayered thin plate was designed and fabricated. A novel method to obtain the piezoelectric constant of the ZnO film was used. The experimental results for characterizing the wave propagation modes and their frequencies of the Lamb wave device indicated that the measured center frequency of antisymmetric A0 and symmetric S0 modes Lamb wave agree with the theoretical predictions. The mass sensitivity of the MEMS Lamb wave device was also characterized for gravimetric sensing application.

  14. Periodic oxidation for fabricating titanium oxynitride thin films via atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Iwashita, Shinya, E-mail: shinya.iwashita@tel.com; Aoyama, Shintaro; Nasu, Masayuki; Shimomura, Kouji; Noro, Naotaka; Hasegawa, Toshio; Akasaka, Yasushi [SPE Core Technology Development Department, Tokyo Electron Yamanashi Ltd., 50 Mitsuzawa, Hosaka-cho, 407-0192 Nirasaki (Japan); Miyashita, Kohei [Leading Edge Process Development Center, Tokyo Electron Ltd., 650 Mitsuzawa, Hosaka-cho, 407-0192 Nirasaki (Japan)

    2016-01-15

    This paper demonstrates thermal atomic layer deposition (ALD) combined with periodic oxidation for synthesizing titanium oxynitride (TiON) thin films. The process used a typical ALD reactor for the synthesis of titanium nitride (TiN) films wherein oxygen was supplied periodically between the ALD-TiN cycles. The great advantage of the process proposed here was that it allowed the TiN films to be oxidized efficiently. Also, a uniform depth profile of the oxygen concentration in the films could be obtained by tuning the oxidation conditions, allowing the process to produce a wide variety of TiON films. The resistivity measurement is a convenient method to confirm the reproducibility of metal film fabrication but may not be applicable for TiON films depending upon the oxidation condition because the films can easily turn into insulators when subjected to periodic oxidation. Therefore, an alternative reproducibility confirmation method was required. In this study, spectroscopic ellipsometry was applied to monitor the variation of TiON films and was able to detect changes in film structures such as conductor–insulator transitions in the TiON films.

  15. Fabrication of solution processed 3D nanostructured CuInGaS₂ thin film solar cells.

    Science.gov (United States)

    Chu, Van Ben; Cho, Jin Woo; Park, Se Jin; Hwang, Yun Jeong; Park, Hoo Keun; Do, Young Rag; Min, Byoung Koun

    2014-03-28

    In this study we demonstrate the fabrication of CuInGaS₂ (CIGS) thin film solar cells with a three-dimensional (3D) nanostructure based on indium tin oxide (ITO) nanorod films and precursor solutions (Cu, In and Ga nitrates in alcohol). To obtain solution processed 3D nanostructured CIGS thin film solar cells, two different precursor solutions were applied to complete gap filling in ITO nanorods and achieve the desirable absorber film thickness. Specifically, a coating of precursor solution without polymer binder material was first applied to fill the gap between ITO nanorods followed by deposition of the second precursor solution in the presence of a binder to generate an absorber film thickness of ∼1.3 μm. A solar cell device with a (Al, Ni)/AZO/i-ZnO/CdS/CIGS/ITO nanorod/glass structure was constructed using the CIGS film, and the highest power conversion efficiency was measured to be ∼6.3% at standard irradiation conditions, which was 22.5% higher than the planar type of CIGS solar cell on ITO substrate fabricated using the same precursor solutions.

  16. Fabrication and characterization of pristine and annealed Ga doped ZnO thin films using sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Abhisek, E-mail: abhisekmishra153@gmail.com; Gouda, Himanshu Sekhar, E-mail: himanshugouda@yahoo.in [School of Applied Sciences, KIIT University, Campus-3, Patia, Bhubaneswar, Odisha-751024 (India); Mohapatra, Saswat, E-mail: saswat44@gmail.com [Department of Applied Physics, Indian School of Mines, Dhanbad, Jharkhand-826004 (India); Singh, Udai P. [School of Electronics Engineering, KIIT University, Campus-3, Patia, Bhubaneswar, Odisha-751024 (India)

    2016-05-06

    ZnO is a wide-band gap, transparent, polar semiconductor with unparalleled optoelectronic, piezoelectric, thermal and transport properties, which make it the material of choice for a wide range of applications such as blue/UV optoelectronics, energy conversion, transparent electronics, spintronic, plasmonic and sensor devices. We report, three sets of Ga doped Zinc Oxide (GZO) were fabricated in different sputtering power (100 watt, 200 watt and 300 watt). Thereafter films were annealed in nitrogen ambient for 30 minutes at 400° C. From the optical absorption spectroscopy it was found that pristine films are showing a 75% transmittance in the visible region of light and it increases after the annealing. However, for 300 W grown sample opposite trend has been achieved for the post annealed sample. X-ray diffraction pattern of all the pristine and annealed films showed a preferable growth orientation at (002) phase. Some other weak peaks were also appeared in different angle which indicates that films are polycrystalline in nature. XRD data also reveals that crystallite size increases with sputtering power up to 200 W and thereafter it decreases with the deposition power. It also noted that the crystallite size of the annealed film increases with compare to the non annealed films. At room temperature an enhancement in electrical properties of Ga doped ZnO thin films was noted for the annealed ZnO films except for the film deposited at 300 watt. More significantly, it was found that annealed thin films showed the resistivity in the range of 10{sup −3} ∼ 10{sup −4} ohm-cm. Such a high optical transmittance and conducting zinc-oxide thin film can be used as a window layer in solar cell.

  17. Fabrication and electrochemical properties of insoluble fullerene-diamine adduct thin-films as buffer layer by alternate immersion process

    Science.gov (United States)

    Saito, Jo; Akiyama, Tsuyoshi; Suzuki, Atsushi; Oku, Takeo

    2017-01-01

    Insoluble fullerene-diamine adduct thin-films consisting of C60 and 1,2-diaminoethane were easily fabricated on an electrode by an alternate immersion process. Formation of the C60-diamine adduct films were confirmed using transmission absorption spectroscopy and atomic force microscopy. An inverted-type organic solar cells were fabricated by using the C60-diamine adduct film as the electron transport layer. The resultant photoelectric conversation performance of the solar cells suggested that photocurrent is generated via the photoexcitation of polythiophene. The result suggests that the present insoluble fullerene-diamine adduct films worked as buffer layer for organic thin-film solar cells.

  18. Fabrication of TiO2 Nanotube Thin Films and Their Gas Sensing Properties

    Directory of Open Access Journals (Sweden)

    Yongxiang Li

    2009-01-01

    Full Text Available The fabrication process and the growth mechanism of titanium/titania nanotubes prepared by anodization process is reviewed, and their applications in the fields of dye sensitized solar cells, photocatalysts, electrochromic devices, gas sensors, and biomaterials are presented. The anodization of Ti thin films on different substrates and the growth process of anodic titanium oxide are described using the current-time curves. Special attention is paid on the influences of the initial film smoothness on the resulted nanoporous morphologies. The “threshold barrier layer thickness model” is used to discuss the growth mechanism. As a case study for gas sensing, anodized highly ordered TiO2 nanotube arrays and nanoporous thin films that show porous surface with an average diameter of 25 nm and interpore distance of 40 nm were prepared. Gas sensors based on such nanotube arrays and nanoporous thin films were fabricated, and their sensing properties were investigated. Excellent H2 gas sensing properties were obtained for sensors prepared from these highly ordered TiO2 nanotube arrays, which present stable response even at a low operating temperature of 90°C. Based on our experimental results, “H-induced O2− desorption” mechanism was used for explaining the hydrogen gas sensing mechanism.

  19. Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate

    Science.gov (United States)

    Han, Dedong; Zhang, Yi; Cong, Yingying; Yu, Wen; Zhang, Xing; Wang, Yi

    2016-12-01

    In this work, we have successfully fabricated bottom gate fully transparent tin-doped zinc oxide thin film transistors (TZO TFTs) fabricated on flexible plastic substrate at low temperature by RF magnetron sputtering. The effect of O2/Ar gas flow ratio during channel deposition on the electrical properties of TZO TFTs was investigated, and we found that the O2/Ar gas flow ratio have a great influence on the electrical properties. TZO TFTs on flexible substrate has very nice electrical characteristics with a low off-state current (Ioff) of 3 pA, a high on/off current ratio of 2 × 107, a high saturation mobility (μsat) of 66.7 cm2/V•s, a steep subthreshold slope (SS) of 333 mV/decade and a threshold voltage (Vth) of 1.2 V. Root-Mean-Square (RMS) roughness of TZO thin film is about 0.52 nm. The transmittance of TZO thin film is about 98%. These results highlight that the excellent device performance can be realized in TZO film and TZO TFT can be a promising candidate for flexible displays.

  20. Ni-Cr thin film resistor fabrication for GaAs monolithic microwave integrated circuits

    Energy Technology Data Exchange (ETDEWEB)

    Vinayak, Seema [Solid State Physics Laboratory, Lucknow Road, Delhi-110054 (India)]. E-mail: seema_vinayak@rediffmail.com; Vyas, H.P. [Solid State Physics Laboratory, Lucknow Road, Delhi-110054 (India); Muraleedharan, K. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad-500058 (India); Vankar, V.D. [Indian Institute of Technology Delhi, Hauz Khas, New Delhi- 110016 (India)

    2006-08-30

    Different Ni-Cr alloys were sputter-deposited on silicon nitride-coated GaAs substrates and covered with a spin-coated polyimide layer to develop thin film metal resistors for GaAs monolithic microwave integrated circuits (MMICs). The contact to the resistors was made through vias in the polyimide layer by sputter-deposited Ti/Au interconnect metal. The variation of contact resistance, sheet resistance (R {sub S}) and temperature coefficient of resistance (TCR) of the Ni-Cr resistors with fabrication process parameters such as polyimide curing thermal cycles and surface treatment given to the wafer prior to interconnect metal deposition has been studied. The Ni-Cr thin film resistors exhibited lower R {sub S} and higher TCR compared to the as-deposited Ni-Cr film that was not subjected to thermal cycles involved in the MMIC fabrication process. The change in resistivity and TCR values of Ni-Cr films during the MMIC fabrication process was found to be dependent on the Ni-Cr alloy composition.

  1. Fabrication of DNA Microarrays on Polydopamine-Modified Gold Thin Films for SPR Imaging Measurements

    Science.gov (United States)

    Wood, Jennifer B.; Szyndler, Megan W.; Halpern, Aaron R.; Cho, Kyunghee

    2013-01-01

    Polydopamine (PDA) films were fabricated on thin film gold substrates in a single-step polymerization-deposition process from dopamine solutions and then employed in the construction of robust DNA microarrays for the ultra-sensitive detection of biomolecules with nanoparticle-enhanced surface plasmon resonance (SPR) imaging. PDA multilayers with thicknesses varying from 1 to 5 nm were characterized with a combination of scanning angle SPR and AFM experiments, and 1.3 ± 0.2 nm PDA multilayers were chosen as an optimal thickness for the SPR imaging measurements. DNA microarrays were then fabricated by the reaction of amine-functionalized single-stranded DNA (ssDNA) oligonucleotides with PDA-modified gold thin film microarray elements, and were subsequently employed in SPR imaging measurements of DNA hybridization adsorption and protein-DNA binding. Concurrent control experiments with noncomplementary ssDNA sequences demonstrated that the adhesive PDA multilayer was also able to provide good resistance to the nonspecific binding of biomolecules. Finally, a series of SPR imaging measurements of the hybridization adsorption of DNA-modified gold nanoparticles onto mixed sequence DNA microarrays were used to confirm that the use of PDA multilayer films is a simple, rapid and versatile method for fabricating DNA microarrays for ultrasensitive nanoparticle-enhanced SPR imaging biosensing. PMID:23902428

  2. Fabrication of DNA microarrays on polydopamine-modified gold thin films for SPR imaging measurements.

    Science.gov (United States)

    Wood, Jennifer B; Szyndler, Megan W; Halpern, Aaron R; Cho, Kyunghee; Corn, Robert M

    2013-08-27

    Polydopamine (PDA) films were fabricated on thin film gold substrates in a single-step polymerization-deposition process from dopamine solutions and then employed in the construction of robust DNA microarrays for the ultrasensitive detection of biomolecules with nanoparticle-enhanced surface plasmon resonance (SPR) imaging. PDA multilayers with thicknesses varying from 1 to 5 nm were characterized with a combination of scanning angle SPR and AFM experiments, and 1.3 ± 0.2 nm PDA multilayers were chosen as an optimal thickness for the SPR imaging measurements. DNA microarrays were then fabricated by the reaction of amine-functionalized single-stranded DNA (ssDNA) oligonucleotides with PDA-modified gold thin film microarray elements, and were subsequently employed in SPR imaging measurements of DNA hybridization adsorption and protein-DNA binding. Concurrent control experiments with non-complementary ssDNA sequences demonstrated that the adhesive PDA multilayer was also able to provide good resistance to the nonspecific binding of biomolecules. Finally, a series of SPR imaging measurements of the hybridization adsorption of DNA-modified gold nanoparticles onto mixed sequence DNA microarrays were used to confirm that the use of PDA multilayer films is a simple, rapid, and versatile method for fabricating DNA microarrays for ultrasensitive nanoparticle-enhanced SPR imaging biosensing.

  3. Metal nanodot arrays fabricated via seed-mediated electroless plating with block copolymer thin film scaffolding.

    Science.gov (United States)

    Komiyama, Hideaki; Iyoda, Tomokazu; Sanji, Takanobu

    2015-10-02

    We present an alternative approach to fabricating hexagonally arranged nanodot arrays of various metals by seed-mediated electroless plating with a cylinder-forming block copolymer thin film, PEO-b-PMA(Az), as a scaffold. Metal ions were selectively incorporated into PEO cylinders, followed by their reduction to metal and the etching of the scaffold to obtain highly ordered seed arrays of Au, Pd, and Pt. Nanodot arrays of the target metals (Au, Ag, and Ni) were selectively grown on the seed with their highly ordered arrangement by electroless plating. We studied the fabrication processes' suitability for control of the nanodot array size, as well as the plasmonic properties thereof.

  4. Fabricating thin-film photovoltaic devices using ultra-sonic spray-coating (Presentation Recording)

    Science.gov (United States)

    Lidzey, David G.

    2015-10-01

    The scale-up of thin-film electronic devices requires a manufacture tool set that is capable of fabricating thin films at high speed over large areas. One such technique capable of such a task is ultra-sonic spray coating. Here, a target solution is fed onto a vibrating tip that breaks the solution up into very fine droplets, with such droplets being carried to a surface by a gas stream. Such ultra-sonic coating processes are already widely used in Electronics, Medical and Displays industries to create films having excellent smoothness and homogeneity. In this talk, I describe the use of ultra-sonic spray-coating to deposit a range of materials for thin-film optoelectronics. As our spray-coating system operates in air, it was first necessary to explore the relative sensitivity of various conjugated polymer / fullerene blends to an air-based process route. It is found that carbazole based co-polymers are particularly stable, and can be processed in air (by spin-coating) into organic photovoltaic devices (OPV) without any apparent loss in device efficiency. I then show that spray-coating can be used to deposit a range of semiconductor materials into smooth, thin-films, including PEDOT:PSS, MoOx (from a precursor) and a series of polymer:fullerene blends. Using such a technique, we are able to scale up an array of devices having an area of 7 cm2, and using a PBDTTT-EFT:PC70BM blend, obtain OPVs having a power conversion efficiency (PCE) of 8.7%. I then discuss spray-coating as a method to fabricate photovoltaic devices based on CH3NH3PbI(3-x)Clx perovskite films. Here, by optimization of deposition parameters, devices are created having a PCE of 11.1%.

  5. Zinc Oxide Thin-Film Transistors Fabricated at Low Temperature by Chemical Spray Pyrolysis

    Science.gov (United States)

    Jeong, Yesul; Pearson, Christopher; Lee, Yong Uk; Winchester, Lee; Hwang, Jaeeun; Kim, Hongdoo; Do, Lee-Mi; Petty, Michael C.

    2014-11-01

    We report the electrical behavior of undoped zinc oxide thin-film transistors (TFTs) fabricated by low-temperature chemical spray pyrolysis. An aerosol system utilizing aerodynamic focusing was used to deposit the ZnO. Polycrystalline films were subsequently formed by annealing at the relatively low temperature of 140°C. The saturation mobility of the TFTs was 2 cm2/Vs, which is the highest reported for undoped ZnO TFTs manufactured below 150°C. The devices also had an on/off ratio of 104 and a threshold voltage of -3.5 V. These values were found to depend reversibly on measurement conditions.

  6. Fabricating quench condensed lead thin film circuits using MEMS Fab on a Chip technology

    Science.gov (United States)

    Imboden, Matthias; Han, Han; Del Corro, Pablo; Pardo, Flavio; Bolle, Cristian; Bishop, David

    2015-03-01

    We have developed a MEMS Fab on a Chip consisting of micro-sources, mass sensors, heaters/thermometers, shutters and a dynamic stencil. The fab only occupies a volume of a few cubic millimeters and consumes milliwatts of power, and hence can be operated in a cryostat. Thin film patterns of arbitrary shapes using multiple materials can be manufactured, while strongly suppressing thermal annealing effects. We demonstrate deposition of quench condensed lead films with fractions of a monolayer thickness control. Furthermore, using low deposition rates it is estimated that the surface temperature of the target heats by only 1.7 K. We study the effects of growing quench condensed films with different evaporation rates to demonstrate thermal annealing effects which occur during deposition. We measure the minimum conduction thickness (insulator to metal transition) as well as the superconducting transition temperature as a function of film thickness in order to shed light on growth of amorphous films and the transition to nanocluster formations. The Fab on a Chip will allow us to build nanocircuits made of ultra-thin materials. Annealing and doping is controlled and measurements occur in situ, without exposing the fabricated circuits to thermal fluctuations or foreign contaminants. This enables new types of experiments based on quantum circuits which cannot be fabricated using standard lithography techniques.

  7. Low-Temperature UV-Assisted Fabrication of Metal Oxide Thin Film Transistor

    Science.gov (United States)

    Zhu, Shuanglin

    Solution processed metal oxide semiconductors have attracted intensive attention in the last several decades and have emerged as a promising candidate for the application of thin film transistor (TFT) due to their nature of transparency, flexibility, high mobility, simple processing technique and potential low manufacturing cost. However, metal oxide thin film fabricated by solution process usually requires a high temperature (over 300 °C), which is above the glass transition temperature of some conventional polymer substrates. In order to fabricate the flexible electronic device on polymer substrates, it is necessary to find a facile approach to lower the fabrication temperature and minimize defects in metal oxide thin film. In this thesis, the electrical properties dependency on temperature is discussed and an UV-assisted annealing method incorporating Deep ultraviolet (DUV)-decomposable additives is demonstrated, which can effectively improve electrical properties solution processed metal oxide semiconductors processed at temperature as low as 220 °C. By studying a widely used indium oxide (In2O3) TFT as a model system, it is worth noted that compared with the sample without UV treatment, the linear mobility and saturation mobility of UV-annealing sample are improved by 56% and 40% respectively. Meanwhile, the subthreshold swing is decreased by 32%, indicating UV-treated device could turn on and off more efficiently. In addition to pure In2O3 film, the similar phenomena have also been observed in indium oxide based Indium-Gallium-Zinc Oxide (IGZO) system. These finding presented in this thesis suggest that the UV assisted annealing process open a new route to fabricate high performance metal oxide semiconductors under low temperatures.

  8. Sorbent coated glass wool fabric as a thin film microextraction device.

    Science.gov (United States)

    Riazi Kermani, Farhad; Pawliszyn, Janusz

    2012-11-06

    A new approach for thin film microextraction (TFME) with mixed-phase sorptive coating is presented. Carboxen/polydimethylsiloxane (CAR/PDMS) and polydimethylsiloxane/divinylbenzene (PDMS/DVB) TFME samplers were prepared using spin coating and glass wool fabric mesh as substrate. The samplers were easily tailored in size and shape by cutting tools. Good durability and flat-shape stability were observed during extraction, stirring in water, and thermal desorption. The latter characteristic obviates the need for an extra framed holder for rapid TFME and makes the samplers more robust and easier to deploy. The samplers combine the advantages of adsorptive solid-phase microextraction (SPME) and TFME, including one-step solvent-free extraction and preconcentration, direct thermal desorption, and enhanced sensitivity without sacrificing analysis time due to thin film geometry. The analytical performance of these new devices was demonstrated using water samples spiked with N-nitrosamines (NAs) as model compounds. Over an order of magnitude enhancement of extraction efficiencies was obtained for the model compounds compared with the SPME fibers of similar coatings and PDMS thin film membrane. The results of this study indicate that these novel thin film devices are promising for rapid and efficient microextraction of polar analytes in water.

  9. Fabrication of MnAl thin films with perpendicular anisotropy on Si substrates

    Science.gov (United States)

    Huang, Efrem Y.; Kryder, Mark H.

    2015-05-01

    For the first time, perpendicularly magnetized L10-ordered MnAl thin films were demonstrated using a MgO seed layer on Si substrates, which is critical to making spintronic devices. Fabrication conditions were selected by systematically varying sputtering parameters (film thickness, DC sputtering power, in situ substrate temperature, and post-annealing temperature) and investigating structural and magnetic properties. Strong perpendicular magnetic anisotropy with coercivity Hc of 8 kOe, Ku of over 6.5 × 106 erg/cm3, saturation magnetization Ms of 300 emu/cm3, and out-of-plane squareness Mr/Ms of 0.8 were achieved. These MnAl film properties were obtained via DC magnetron sputtering at 530 °C, followed by 350 °C annealing under a 4 kOe magnetic field oriented perpendicular to the film plane.

  10. Surface morphology and magnetic property of wrinkled FeGa thin films fabricated on elastic polydimethylsiloxane

    Science.gov (United States)

    Zhang, Shuanglan; Zhan, Qingfeng; Yu, Ying; Liu, Luping; Li, Huihui; Yang, Huali; Xie, Yali; Wang, Baomin; Xie, Shuhong; Li, Run-Wei

    2016-03-01

    We investigated the surface morphology and the magnetic property of wrinkled Fe81Ga19 (FeGa) thin films fabricated in two different processes onto elastic polydimethylsiloxane (PDMS) substrates. The films obtained by directly depositing Ta and FeGa layers on a pre-strained PDMS substrate display a sinusoidally wrinkled surface and a weak magnetic anisotropy. The wavelength and amplitude of the sinusoidal morphology linearly increase with the metallic layer thickness, while the magnetic anisotropy decreases with increasing FeGa thickness. The other films grown by depositing FeGa layer on a wrinkled Ta/PDMS surface show a remarkable uniaxial magnetic anisotropy. The strength of magnetic anisotropy increases with increasing FeGa thickness. The magnetic anisotropy can be ascribed to the surface anisotropy, the magnetostrictive anisotropy, and the shape anisotropy caused, respectively, by the magnetic charges on wavy morphology, the residual mechanical stress, and the inhomogeneous thickness of FeGa films.

  11. Fabrication of SiC nanowire thin-film transistors using dielectrophoresis

    Institute of Scientific and Technical Information of China (English)

    Dai Zhenqing; Zhang Liying; Chen Changxin; Qian Bingjian; Xu Dong; Chen Haiyan; Wei Liangming; Zhang Yafei

    2012-01-01

    The selection of solvents for SiC nanowires (NWs) in a dielectrophoretic process is discussed theoretically and experimentally.From the viewpoints of dielectrophoresis force and torque,volatility,as well as toxicity,isopropanol (IPA) is considered as a proper candidate.By using the dielectrophoretic process,SiC NWs are aligned and NW thin films are prepared.The densities of the aligned SiC NWs are 2 μm-1,4 μm-1,6 μm-1,which corresponds to SiC NW concentrations of 0.1 μg/μL,0.3μg/μL and 0.5 μg/μL,respectively.Thin-film transistors are fabricated based on the aligned SiC NWs of 6 μm-1.The mobility of a typical device is estimated to be 13.4 cm2/(V.s).

  12. A Micro-Fabricated Force Sensor Using an All Thin Film Piezoelectric Active Sensor

    Directory of Open Access Journals (Sweden)

    Junwoo Lee

    2014-11-01

    Full Text Available The ability to measure pressure and force is essential in biomedical applications such as minimally invasive surgery (MIS and palpation for detecting cancer cysts. Here, we report a force sensor for measuring a shear and normal force by combining an arrayed piezoelectric sensors layer with a precut glass top plate connected by four stress concentrating legs. We designed and fabricated a thin film piezoelectric force sensor and proposed an enhanced sensing tool to be used for analyzing gentle touches without the external voltage source used in FET sensors. Both the linear sensor response from 3 kPa to 30 kPa and the exact signal responses from the moving direction illustrate the strong feasibility of the described thin film miniaturized piezoelectric force sensor.

  13. Magnetic domain observation of FeCo thin films fabricated by alternate monoatomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ohtsuki, T., E-mail: ohtsuki@spring8.or.jp; Kotsugi, M.; Ohkochi, T. [Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Koto, Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan); Kojima, T.; Mizuguchi, M.; Takanashi, K. [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

    2014-01-28

    FeCo thin films are fabricated by alternate monoatomic layer deposition method on a Cu{sub 3}Au buffer layer, which in-plane lattice constant is very close to the predicted value to obtain a large magnetic anisotropy constant. The variation of the in-plane lattice constant during the deposition process is investigated by reflection high-energy electron diffraction. The magnetic domain images are also observed by a photoelectron emission microscope in order to microscopically understand the magnetic structure. As a result, element-specific magnetic domain images show that Fe and Co magnetic moments align parallel. A series of images obtained with various azimuth reveal that the FeCo thin films show fourfold in-plane magnetic anisotropy along 〈110〉 direction, and that the magnetic domain structure is composed only of 90∘ wall.

  14. Fabrication of Au/graphene oxide/Ag sandwich structure thin film and its tunable energetics and tailorable optical properties

    Directory of Open Access Journals (Sweden)

    Ruijin Hong

    2017-01-01

    Full Text Available Au/graphene oxide/Ag sandwich structure thin film was fabricated. The effects of graphene oxide (GO and bimetal on the structure and optical properties of metal silver films were investigated by X-ray diffraction (XRD, optical absorption, and Raman intensity measurements, respectively. Compared to silver thin film, Au/graphene oxide/Ag sandwich structure composite thin films were observed with wider optical absorption peak and enhanced absorption intensity. The Raman signal for Rhodamine B molecules based on the Au/graphene oxide/Ag sandwich nanostructure substrate were obviously enhanced due to the bimetal layer and GO layer with tunable absorption intensity and fluorescence quenching effects.

  15. Thin film fabrication and system integration test run for a microactuator for a tuneable lens

    Science.gov (United States)

    Hoheisel, Dominik; Rissing, Lutz

    2014-03-01

    An electromagnetic microactuator, for controlling of a tuneable lens, with an integrated electrostatic element is fabricated by thin film technology. The actuator consists of two parts: the first part with microcoil and flux guide and the second part with a ring shaped back iron on a polyimide membrane. The back iron is additionally useable as electrode for electrostatic measurement of the air gap and for electrostatic actuation. By attracting the back iron an optical liquid is displaced and forms a liquid lens inside the back iron ring covered by the membrane. For testing the thin film fabrication sequence, up-scaled systems are generated in a test run. To fabricate the flux guide in an easy and quick way, a Ni-Fe foil with a thickness of 50 μm is laminated on the Si-wafer. This foil is also utilized in the following fabrication sequence as seed layer for electroplating. Compared to Ni-Fe structures deposited by electroplating, the foil is featuring better soft magnetic properties. The foil is structured by wet chemical etching and the backside of the wafer is structured by deep reactive ion etching (DRIE). For post fabrication thinning, the polyimide membrane is treated by oxygen plasma etching. To align the back iron to the microcoil and the flux guide, a flip-chip-bonder is used during test run of system integration. To adjust a constant air gap, a water solvable polymer is tested. A two component epoxy and a polyimide based glue are compared for their bonding properties of the actuator parts.

  16. The Impact of Standard Semiconductor Fabrication Processes on Polycrystalline Nb Thin Film Surfaces

    Science.gov (United States)

    Brown, Ari David; Barrentine, Emily M.; Moseley, Samuel H.; Noroozian, Omid; Stevenson, Thomas

    2011-01-01

    Polycrystalline superconducting Nb thin films are extensively used for submillimeter and millimeter transmission line applications and, less commonly, used in microwave kinetic inductance detector (MKID) applications. The microwave and mm-wave loss in these films is impacted, in part, by the presence of surface nitrides and oxides. In this study, glancing incidence x-ray diffraction was used to identify the presence of niobium nitride and niobium monoxide surface layers on Nb thin films which had been exposed to chemicals used in standard photolithographic processing. A method of mitigating the presence of ordered niobium monoxide surface layers is presented. Furthermore, we discuss the possibility of using glancing incidence x-ray diffraction as a non-destructive diagnostic tool for evaluating the quality of Nb thin films used in MKIDs and transmission lines. For a given fabrication process, we have both the x-ray diffraction data of the surface chemistry and a measure of the mm-wave and microwave loss, the latter being made in superconducting resonators.

  17. Fabrication of CIGS thin films by using spray pyrolysis and post-selenization

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Seong Yeon; Kim, Jun Ho [University of Incheon, Incheon (Korea, Republic of)

    2012-06-15

    We fabricated Cu(In{sub 1-x}Ga{sub x})Se{sub 2} (x: 0 ∼ 0.4) thin films by using ultrasonic spray pyrolysis and post-selenization. First, we made Cu(In{sub 1-x}Ga{sub x})S{sub 2} (x: 0 ∼ 0.4) films by ultrasonic spray pyrolysis under an air environment. Then, we converted as-sprayed Cu(In{sub 1-x}Ga{sub x})S{sub 2} (CIGS) films to Cu(In{sub 1-x}Ga{sub x})Se{sub 2} (CIGSe) films through post-selenization. For all Ga fractions, the sprayed CIGS films were well recrystallized into poly-crystalline CIGSe films with a dominant (112) texture, which was confirmed by X-ray diffraction, Raman spectroscopy and energy dispersive X-ray analyses. This result indicates that CIGSe films with any amount of Ga substitution can be made by converting sprayed CIGS to CIGSe with post-selenization.

  18. Study of deposition parameters for the fabrication of ZnO thin films using femtosecond laser

    Science.gov (United States)

    Hashmi, Jaweria Zartaj; Siraj, Khurram; Latif, Anwar; Murray, Mathew; Jose, Gin

    2016-08-01

    Femtosecond (fs) pulsed laser deposition (fs-PLD) of ZnO thin film on borosilicate glass substrates is reported in this work. The effect of important fs-PLD parameters such as target-substrate distance, laser pulse energy and substrate temperature on structure, morphology, optical transparency and luminescence of as-deposited films is discussed. XRD analysis reveals that all the films grown using the laser energy range 120-230 μJ are polycrystalline when they are deposited at room temperature in a ~10-5 Torr vacuum. Introducing 0.7 mTorr oxygen pressure, the films show preferred c-axis growth and transform into a single-crystal-like film when the substrate temperature is increased to 100 °C. The scanning electron micrographs show the presence of small nano-size grains at 25 °C, which grow in size to the regular hexagonal shape particles at 100 °C. Optical transmission of the ZnO film is found to increase with an increase in crystal quality. Maximum transmittance of 95 % in the wavelength range 400-1400 nm is achieved for films deposited at 100 °C employing a laser pulse energy of 180 μJ. The luminescence spectra show a strong UV emission band peaked at 377 nm close to the ZnO band gap. The shallow donor defects increase at higher pulse energies and higher substrate temperatures, which give rise to violet-blue luminescence. The results indicate that nano-crystalline ZnO thin films with high crystalline quality and optical transparency can be fabricated by using pulses from fs lasers.

  19. The Relation Between Structure-Performance of Thin Film Composite Membranes and the Tools Used for Their Fabrication Method

    DEFF Research Database (Denmark)

    Briceno, Kelly; Javakhishvili, Irakli; Guo, Haofei

    For more than 30 years polyimides (PA) have been one of the main polymers for the fabrication of thin film composite membranes. Several researchers have assessed the main fabrication variables that influence the final structure of the polyamide layers including monomer concentration, solvents...

  20. Fabrication and evaluation of dispersed-Ag nanoparticles-in-polyimide thin films

    Science.gov (United States)

    Sonehara, Makoto; Watanabe, Yuki; Yamaguchi, Sota; Kato, Takanori; Yoshisaku, Yasuaki; Sato, Toshiro; Itoh, Eiji

    2017-10-01

    A thin-film common-mode filter (TF-CMF) for cell phones in the UHF band was fabricated and evaluated. The TF-CMF consisted of multiple metal–insulator–metal (MIM) capacitors and inductors. The sizes of the 0.70–1.0 GHz band-type and 1.8–2.0 GHz band-type TF-CMFs are 1,140 × 1,260 × 10.5 µm3, and 1,060 × 1,060 × 10.5 µm3, respectively. The footprint in both types of TF-CMFs is over 1 mm2. In order to miniaturize the TF-CMF, we proposed to change a polyimide-only to a polyimide with dispersed Ag nanoparticles with high permittivity in the insulator layer for the MIM capacitor of the TF-CMF. A polyimide (\\text{polyimide precursor}:\\text{toluene with dispersed Ag nanoparticles} = 100:1) thin film with dispersed high-density Ag nanoparticles has a relative permittivity of about 8, which is twice as high as that of the polyimide-only thin film. If the capacitance and distance between electrodes are the same, then the capacitor footprint may be halved.

  1. Fabrication and characteristics of magnetic field sensors based on nano-polysilicon thin-film transistors

    Institute of Scientific and Technical Information of China (English)

    Zhao Xiaofeng; Wen Dianzhong; Zhuang Cuicui; Cao Jingya; Wang Zhiqiang

    2013-01-01

    A magnetic field sensor based on nano-polysilicon thin films transistors (TFTs) with Hall probes is proposed.The magnetic field sensors are fabricated on 〈100〉 orientation high resistivity (ρ > 500 Ω·cm) silicon substrates by using CMOS technology,which adopt nano-polysilicon thin films with thicknesses of 90 nm and heterojunction interfaces between the nano-polysilicon thin films and the high resistivity silicon substrates as the sensing layers.The experimental results show that when VDS =5.0 V,the magnetic sensitivities of magnetic field sensors based on nano-polysilicon TFTs with length-width ratios of 160 μm/80 μm,320 μm/80 μm and 480 μm/80μm are 78 mV/T,55 mV/T and 34 mV/T,respectively.Under the same conditions,the magnetic sensitivity of the obtained magnetic field sensor is significantly improved in comparison with a Hall magnetic field sensor adopting silicon as the sensing layers.

  2. Fabrication of thin electrolyte film by electrophoretic deposition for intermediate-temperature solid oxide fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Lankin, M.; Karan, K. [Royal Military Coll. of Canada, Kingston, ON (Canada). Fuel Cell Research Centre

    2005-07-01

    Stainless steel interconnects are suitable for use in intermediate temperature solid oxide fuel cells (ITSOFCs) operating at 500-700 degrees C. This can greatly reduce the cost of materials. However, lower temperatures lead to higher ohmic losses in the electrolyte. These losses can be reduced by making SOFCs with thin electrolyte layers. Conventional methods for thin-film fabrication such as electro-vapour deposition or plasma spraying are expensive techniques. An alternative method is electrophoretic deposition (EPD), which is less costly and which very rapidly produces uniform electrolyte layers in the order of 10-40 {mu}m. In this study, EPD was used to make thin gadolina-doped ceria (GDC) electrolytes on copper-GDC anodes for use in ITSOFCs fuelled by biofuels. Experimental studies thus far have shown how to optimize the parameters influencing the EPD process. Scanning electron microscope analysis has shown that electrolyte layers of 10 {mu}m thickness, uniform thickness and moderate density are produced by EPD. This paper described the development of a single-cell SOFC based on the EPD process, and discussed the progress to date, on characterizing thin film electrolytes.

  3. Fabrication and characterization of anatase/rutile–TiO2 thin films by magnetron sputtering: a review

    Directory of Open Access Journals (Sweden)

    Sakae Tanemura, Lei Miao, Wilfried Wunderlich, Masaki Tanemura, Yukimasa Mori, Shoichi Toh and Kenji Kaneko

    2005-01-01

    Full Text Available This review article summarizes briefly some important achievements of our recent reserach on anatase and/or rutile TiO2 thin films, fabricated by helicon RF magnetron sputtering, with good crystal quality and high density, and gives the-state-of-the-art of the knowledge on systematic interrelationship for fabrication conditions, crystal structure, composition, optical properties, and bactericidal abilities, and on the effective surface treatment to improve the optical reactivity of the obtained films.

  4. Flexible thin-film polymer waveguides fabricated in an industrial roll-to-roll process.

    Science.gov (United States)

    Bruck, R; Muellner, P; Kataeva, N; Koeck, A; Trassl, S; Rinnerbauer, V; Schmidegg, K; Hainberger, R

    2013-07-01

    The fabrication of flexible low-loss, thin-film, foil-based polymer waveguides with grating couplers employing a high-volume industrial roll-to-roll process is demonstrated. The embossed waveguides feature propagation losses of less than 1 dB/cm (633 nm, TE polarization), bending losses of 0.4-0.8 dB/360° for bending radii as small as 2 mm, and grating coupling efficiencies of up to 25%. In addition, the waveguides possess a thermo-optic coefficient of -1.58×10(-4) 1/°C. The fabricated waveguides are promising candidates for short-distance data communication as well as for sensing applications.

  5. High quality YBCO superconductive thin films fabricated by laser molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    CHEN; Fan

    2001-01-01

    [1]Hirata,K.,Yamamoto,K.,Iijinma,J.et al.,Tunneling measurements on superconductor/insulator/superconductor junctions using single-crystal YBa2Cu3O7-x thin films,Appl.Phys.Lett.,1990,56(7):683-685.[2]Kingston,J.J.,Wellstood,F.C.,Lerch,P.et al.,Multilayer YBa2Cu3Ox-SrTiO3-YBa2Cu3Ox films for insulating crossovers,Appl.Phys.Lett.,1990,56(2):189-191.[3]Grundler,D.,Krumme,J.P.,David,B.et al.,YBa2Cu3O7 ramp-type junctions and superconducting quantum interference devices with an ultra thin barrier of NdGaO3,Appl.Phys.Lett.,1994,65(14):1841-1843.[4]Yang Guozhen,Lu Huibin,Chen Zhenghao et al.,Laser molecular beam epitaxy system and its key technologies,Science in China (in Chinese),Ser.A,1998,28(3):260-265.[5]Wang Ning,Lu Huibin,Chen,W.Z.et al.,Morphology and microstructure of BaTiO3/SrTiO3 superlattices grown on SrTiO3 by laser molecular-beam epitaxy,Appl.Phys.Lett.,1999,75(22):3464-3466.[6]Chen Li-Chyng,Particulates generated by pulsed laser ablation,in Pulsed Laser Deposition of Thin Films (eds.Chrisey,D.B.,Hulber,G.K.),New York:John Wiley & Sons,Inc.,1994,167-198.[7]Wang,H.S.,Dietsche,W.,Eissler,D.et al.,Molecular beam epitaxial growth and structure properties of DyBa2Cu3O7-y,J.Crys.Growth,1993,126:565-577.[8]Kita,R.,Hase,T.,Itti,R.et al.,Synthesis of CuO films using mass-separated,low-energy O+ ion beams,Appl.Phys.Lett.,1992,60(21):2684-2685.[9]Lu Huibin,Zhou Yueliang,Yang Guozhen et al.,Active gas source for thin film preparation,Chinese Patent (in Chinese),1996,No.ZL 96219046.2.[10]Wang Jing,Chen Fan,Zhao Tong et al.,Fabrication of high stable DC-SQUIDS with L-MBE YBCO thin films,Chinese Journal of Low Temperature Physics (in Chinese),1999,21(1):13-16.

  6. Fabrication of Thermoelectric Sensor and Cooling Devices Based on Elaborated Bismuth-Telluride Alloy Thin Films

    Directory of Open Access Journals (Sweden)

    Abdellah Boulouz

    2014-01-01

    Full Text Available The principal motivation of this work is the development and realization of smart cooling and sensors devices based on the elaborated and characterized semiconducting thermoelectric thin film materials. For the first time, the details design of our sensor and the principal results are published. Fabrication and characterization of Bi/Sb/Te (BST semiconducting thin films have been successfully investigated. The best values of Seebeck coefficient (α(T at room temperature for Bi2Te3, and (Bi1−xSbx2Te3 with x = 0.77 are found to be −220 µV/K and +240 µV/K, respectively. Fabrication and evaluation of performance devices are reported. 2.60°C of cooling of only one Peltier module device for an optimal current of Iopt=2.50 mA is obtained. The values of temperature measured by infrared camera, by simulation, and those measured by the integrated and external thermocouple are reported. A sensitivity of the sensors of 5 mV Torr−1 mW−1 for the pressure sensor has been found with a response time of about 600 ms.

  7. Electrodeposition-Based Fabrication and Characteristics of Tungsten Trioxide Thin Film

    OpenAIRE

    Li Lin; Chin-Pao Cheng; Tun-Ping Teng

    2016-01-01

    In this study, tungsten trioxide (WO3) thin films were electrodeposited on indium tin oxide (ITO) glass to form WO3-coated glass. The electrodeposition (ED) time (tED) and ED current (IED) were varied to control the film thickness and morphology. Furthermore, the crystallization of the thin films was controlled by annealing them at 250°C, 500°C, and 700°C. The results showed that the thickness of the WO3 thin films increased with tED and IED. The as-deposited thin films and those annealed at ...

  8. Low-Temperature (《 100℃) Poly-Si Thin Film Fabrication on Glass

    Institute of Scientific and Technical Information of China (English)

    WANG Cheng-Long; FAN Duo-Wang; SUN Shuo; ZHANG Fu-Jia; LIU Hong-Zhong

    2009-01-01

    Polycrystalline silicon (poly-Si) thin-film is fabricated on Al-coated planar glass substrates at the temperature below 100℃, using aluminium-induced crystallized (AIC) amorphous silicon (a-Si) deposited by dc-magnetron sputtering under an electric field. The properties of NA poly-Si films (AIC of dc-magnetron sputtered silicon non-annealing) are characterized by Raman .spectroscopy and x-ray diffraction (XRD) spectroscopy. A narrow and symmetrical Raman peak at a wave number of about 521 cm-1 is observed for samples, showing that the films are fully crystallized. XRD spectra reveal that the films are preferentially (111) oriented. Furthermore, the XRD spectrum of the sample prepared without electric field does not show any XRD peaks for poly-Si, which only appears at about 38° for Al (111) orientation. It is indicated that the electric field plays an important role in crystallization of poly-Si during the dc-magnetron sputtering. Thus, high quality poly-Si film can be obtained at low temperature and separate post-deposition step of AIC of a-silicon can be avoided.

  9. Hydrophobic and high transparent honeycomb diamond-like carbon thin film fabricated by facile self-assembled nanosphere lithography

    Science.gov (United States)

    Peng, Kai-Yu; Wei, Da-Hua; Lin, Chii-Ruey; Yu, Yueh-Chung; Yao, Yeong-Der; Lin, Hong-Ming

    2014-01-01

    In this paper, we take advantage of a facile fabrication technique called self-assembled nanosphere lithography (SANSL) combining with proper two-step reactive ion etching (RIE) method and radio frequency (RF) sputtering deposition process for manufacturing honeycomb diamond-like carbon (DLC) thin film structures with hydrophobic and high transparent properties. It is found that the DLC thin films deposited on clean glass substrates at the RF power of 100 W with the surface roughness (Ra) of 2.08 nm and the ID/IG ratio of 1.96 are realized. With a fill-factor of 0.691, the honeycomb DLC patterned thin film shows the best transmittance performance of 87% in the wavelength of visible light, and the optimized contact angle measurement is ˜108°. Compared with the pure DLC thin film and original glass substrate, the hydrophobic property of the patterned DLC films is significantly improved by 80 and 160%, respectively.

  10. Design and fabrication of thin film Bi-Sb and Bi-Cu thermopiles for IR thermal radiation detection

    CERN Document Server

    Afzalzadeh, R

    2003-01-01

    Thin film thermopiles are widely used as small size sensors, in particular to sense infra-red thermal radiations. In this paper a method for designing and fabrication of thin films Bi-Cu thermopiles in linear in linear array of 8 and 11 elements in series and mono-layer is introduced. Also, fabrication of of Bi-Cu thin film thermopiles, which are used as IR radiation sensors, made in multilayer from with 100 series junctions in circular shape are presented. The samples are fabricated on a PCB board with double-side copper laminated as a substrate. The results of our measurements show that the output voltage produced due to temperature difference between junctions, is very sensitive and linear to temperature difference.

  11. High-frequency behavior of FeN thin films fabricated by using reactive sputtering

    Science.gov (United States)

    Hwang, Tae-Jong; Lee, Joonsik; Kim, Ki Hyeon; Kim, Dong Ho

    2016-08-01

    We used ferromagnetic resonance (FMR) and its relationship with the static magnetic properties to investigate the high-frequency behavior of FeN thin films prepared by using reactive sputtering. The FMR was observed in the frequency range from 2 to 18 GHz in the FeN films fabricated at a proper nitrogen flow rate (NFR). In those FeN thin films, a decrease in the saturation magnetization and a corresponding decrease of the FMR frequency were observed as the NFR was increased during the deposition. The external field dependences of the FMR frequencies fit the Kittel formula well, and the Landé g-factors determined from the fit were found to be very close to the free electron value. The high-field damping parameters were almost insensitive to the NFR. However, the lowfield damping parameters exhibited a high sensitivity to the NFR very similar to the dependence of the hard-axis coercivity on the NFR, suggesting that extrinsic material properties, such as impurities and defect structures, could be important in deciding the low-field damping behavior.

  12. Fabrication of organic thin-film transistors using layer-by-layer assembly.

    Science.gov (United States)

    Stricker, Jeffery T; Gudmundsdóttir, Anna D; Smith, Adam P; Taylor, Barney E; Durstock, Michael F

    2007-06-14

    Layer-by-layer assembly is presented as a deposition technique for the incorporation of ultrathin gate dielectric layers into thin-film transistors utilizing a highly doped organic active layer. This deposition technique enables the fabrication of device structures with a controllable gate dielectric thickness. In particular, devices with a dielectric layer comprised of poly(allylamine hydrochloride)/poly(acrylic acid) (PAH/PAA) bilayer films were fabricated to examine the properties of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) as the transistor active layer. The transistor Ion/off ratio and switching speed are shown to be controlled by the gate bias, which is dependent upon the voltage applied and the number of bilayers deposited for the gate dielectric. The devices operate in the depletion mode as a result of dedoping of the active layer with the application of a positive gate bias. The depletion and recovery rate are highly dependent on the level of hydration in the film and the environment under which the device is operated. These observations are consistent with an electrochemical dedoping of the conducting polymer during operation.

  13. Novel thin-film CuInSe sub 2 fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Mooney, G.D.; Hermann, A.M. (Colorado Univ., Boulder, CO (United States))

    1992-03-01

    This report describes research in Rapid Thermal Processing (RTP), a process that allows the formation of CuInSe{sub 2} without the use of H{sub 2}Se. RTP is a well-established method of rapidly achieving temperatures necessary to melt and recrystallize materials such as Si and and silicides. RTP processes can rapidly and uniformly heat large surface areas to hundreds of degrees Celsius. RTP is the most promising method of rapid recrystallization studied to date, being readily scalable from the research to the production level. The approach to the experiment was divided into two sections: (1) fabricating the precursor film and (2) processing the precursor film. The objective of the first phase of the work was to fabricate the thin films by RTP, then fully characterize them, to demonstrate the viability of the process as a method by which to make device-quality CuInSe{sub 2}. The second phase was to demonstrate that material made by this method could be used to make an active photovoltaic device. 24 refs.

  14. Fabrication of SnS thin films by the successive ionic layer adsorption and reaction (SILAR) method

    Science.gov (United States)

    Ghosh, Biswajit; Das, Madhumita; Banerjee, Pushan; Das, Subrata

    2008-12-01

    Tin sulfide films of 0.20 µm thickness were grown on glass and ITO substrates by the successive ionic layer adsorption and reaction (SILAR) method using SnSO4 and Na2S solution. The as-grown films were well covered and strongly adherent to the substrate. XRD confirmed the deposition of SnS thin films and provided information on the crystallite size and residual strain of the thin films. FESEM revealed almost equal distribution of the particle size well covered on the surface of the substrate. EDX showed that as-grown SnS films were slightly rich in tin component. High absorption in the visible region was evident from UV-Vis transmission spectra. PL studies were carried out with 550 nm photon excitation. To the best of our knowledge, however, no attempt has been made to fabricate a SnS thin film using the SILAR technique.

  15. Responsive polymer/gold nanoparticle composite thin films fabricated by solvent-induced self-assembly and spin-coating.

    Science.gov (United States)

    Li, Dongxiang; Lee, Ji Yong; Kim, Dong Ha

    2011-02-15

    Self-assembled poly(4-vinylpyridine)-grafted gold (Au) nanoparticles (NPs) and polystyrene-b-poly(4-vinylpyridine) block copolymers were fabricated by the introduction of a selective solvent to a common solution. The assembled mixtures were spin-coated onto solid substrates to fabricate composite gold/polymer thin films composed of copolymer-hybridized Au NPs and independent copolymer micelles. The obtained composite Au thin films had variable localized surface plasmon resonance (LSPR) bands and microscopic morphologies upon vapor annealing with selective solvents because the adsorption and dissolving of solvent molecules into the films could rearrange the copolymer block. The hybrid nanostructured Au thin films may have potential in vapor sensing and organic assays. Copyright © 2010 Elsevier Inc. All rights reserved.

  16. Methods for fabricating thin film III-V compound solar cell

    Science.gov (United States)

    Pan, Noren; Hillier, Glen; Vu, Duy Phach; Tatavarti, Rao; Youtsey, Christopher; McCallum, David; Martin, Genevieve

    2011-08-09

    The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

  17. Surface-mounted MOF templated fabrication of homochiral polymer thin film for enantioselective adsorption of drugs.

    Science.gov (United States)

    Gu, Zhi-Gang; Fu, Wen-Qiang; Liu, Min; Zhang, Jian

    2017-01-26

    A self-polymerized chiral monomer 3,4-dihydroxy-l-phenylalanine (l-DOPA) has been introduced into the pores of an achiral surface-mounted metal organic framework (SURMOF), and then the homochiral poly(l-DOPA) thin film has been successfully formed after UV light irradiation and etching of the SURMOF. Remarkably, such a poly(l-DOPA) thin film exhibited enantioselective adsorption of naproxen. This study opened a SURMOF-templated approach for preparing porous polymer thin films.

  18. Gold Nanoparticulate Thin Films Fabricated by the Electrostatic Self-Assembly Process

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Gold colloids were prepared by citrate-induced reduction of hydrogen tetrachloroaurate, and gold nanoparticles were electrostatically self-assembled with poly(diallyldimethylammonium chloride) into multilayer thin films on silicon and quartz substrates. The particulate thin films were characterized by UV-vis spectroscopy, surface enhanced Raman scattering, atomic force microscopy and resistivity measurements. Due to the interparticle coupling between individual gold particles,an obvious collective particle plasmon resonance was observed on UV-vis spectra, and the particulate thin films exhibited a strong SERS effect. For multilayer thin films with a high particle coverage on substrates, resistivity of the order of 10-4Ω*cm was yielded.

  19. Advanced fabrication method for the preparation of MOF thin films: Liquid-phase epitaxy approach meets spin coating method.

    KAUST Repository

    Chernikova, Valeriya

    2016-07-14

    Here we report a new and advanced method for the fabrication of highly oriented/polycrystalline metal-organic framework (MOF) thin films. Building on the attractive features of the liquid-phase epitaxy (LPE) approach, a facile spin coating method was implemented to generate MOF thin films in a high-throughput fashion. Advantageously, this approach offers a great prospective to cost-effectively construct thin-films with a significantly shortened preparation time and a lessened chemicals and solvents consumption, as compared to the conventional LPE-process. Certainly, this new spin-coating approach has been implemented successfully to construct various MOF thin films, ranging in thickness from a few micrometers down to the nanometer scale, spanning 2-D and 3-D benchmark MOF materials including Cu2(bdc)2•xH2O, Zn2(bdc)2•xH2O, HKUST-1 and ZIF-8. This method was appraised and proved effective on a variety of substrates comprising functionalized gold, silicon, glass, porous stainless steel and aluminum oxide. The facile, high-throughput and cost-effective nature of this approach, coupled with the successful thin film growth and substrate versatility, represents the next generation of methods for MOF thin film fabrication. Thereby paving the way for these unique MOF materials to address a wide range of challenges in the areas of sensing devices and membrane technology.

  20. Advanced Fabrication Method for the Preparation of MOF Thin Films: Liquid-Phase Epitaxy Approach Meets Spin Coating Method.

    Science.gov (United States)

    Chernikova, Valeriya; Shekhah, Osama; Eddaoudi, Mohamed

    2016-08-10

    Here, we report a new and advanced method for the fabrication of highly oriented/polycrystalline metal-organic framework (MOF) thin films. Building on the attractive features of the liquid-phase epitaxy (LPE) approach, a facile spin coating method was implemented to generate MOF thin films in a high-throughput fashion. Advantageously, this approach offers a great prospective to cost-effectively construct thin-films with a significantly shortened preparation time and a lessened chemicals and solvents consumption, as compared to the conventional LPE-process. Certainly, this new spin-coating approach has been implemented successfully to construct various MOF thin films, ranging in thickness from a few micrometers down to the nanometer scale, spanning 2-D and 3-D benchmark MOF materials including Cu2(bdc)2·xH2O, Zn2(bdc)2·xH2O, HKUST-1, and ZIF-8. This method was appraised and proved effective on a variety of substrates comprising functionalized gold, silicon, glass, porous stainless steel, and aluminum oxide. The facile, high-throughput and cost-effective nature of this approach, coupled with the successful thin film growth and substrate versatility, represents the next generation of methods for MOF thin film fabrication. Therefore, paving the way for these unique MOF materials to address a wide range of challenges in the areas of sensing devices and membrane technology.

  1. Fabrication of Pentacene Thin-Film Transistors with Patterned Polyimide Photoresist as Gate Dielectrics and Research of Their Degradation

    Institute of Scientific and Technical Information of China (English)

    LIANG Yan; DONG Gui-Fang; HU Yuan-Chuan; HU Yan; WANG Li-Duo; QIU Yong

    2004-01-01

    @@ Pentacene organic thin-film transistors using commercial photoresist as gate dielectrics were fabricated. The photoresist was spin-coated and directly patterned by photolithography. As a result, the fabrication processes were greatly reduced. With the characteristics of the transistors measured, the degradation of the transistors was investigated. In the search for the factors causing degradation, a transistor using poly(methyl methacrylate)as the gate dielectric was also fabricated. It is regarded that the degradation is caused by the changes at the interface between photoresist and pentacene film.

  2. Flexible aluminum-doped zinc-oxide thin-film transistor fabricated on plastic substrates

    Science.gov (United States)

    Han, Dedong; Chen, Zhuofa; Zhao, Nannan; Wang, Wei; Huang, Fuqing; Zhang, Shengdong; Zhang, Xing; Wang, Yi

    2014-03-01

    We have studied processing and characteristics of flexible Aluminum-doped Zinc Oxide thin-film transistors (AZO TFTs) fabricated on plastic substrates using radio frequency (rf) magnetron sputtering. To improve the performance of flexible AZO TFT, we studied effects of device structures on characteristics of the aluminum-doped zinc oxide thin film transistors. The electrical properties of top-gate type and bottom-gate type AZO TFTs were investigated, respectively. The top-gate type AZO TFTs shows a threshold voltage of 1.4 V, a Ion/Ioff current ratio of 1.0×107, a field effect mobility of 28.2 cm2/ V•s, a subthreshold swing of 0.19 V/decade. And the bottom-gate type AZO TFTs shows a threshold voltage of 1.7 V, a Ion/Ioff ratio of 1.0×107, a field effect mobility of 209 cm2/ V•s, a subthreshold swing of 0.16 V/decade, and the off current of less than 10-11A at room temperature. Both TFTs show low threshold voltage, high Ion/Ioff ratio and high field effect mobility. By comparison, the bottom-gate type AZO TFTs shows better characteristics. The flexible AZO-TFT is a very promising low-cost optoelectronic device for the next generation of invisible and flexible electronics due to flexible, transparency, high mobility, and low-temperature processing.

  3. Method for Fabricating Miniaturized NiTi Self-Expandable Thin Film Devices with Increased Radiopacity

    Science.gov (United States)

    Bechtold, Christoph; Lima de Miranda, Rodrigo; Chluba, Christoph; Zamponi, Christiane; Quandt, Eckhard

    2016-12-01

    Nitinol is the material of choice for many medical applications, in particular for minimally invasive implants due to its superelasticity and biocompatibility. However, NiTi has limited radiopacity which complicates positioning in the body. A common strategy to increase the radiopacity of NiTi devices is the addition of radiopaque markers by micro-riveting or micro-welding. The recent trend of miniaturizing medical devices, however, reduces their radiopacity further, and makes the addition of radiopaque markers to these miniaturized devices difficult. NiTi thin film technology has great potential to overcome such limitations and to fabricate new generations of miniaturized, self-expandable NiTi medical devices with additional functionalities, such as structured multilayer devices with increased radiopacity. For this purpose, we have produced superelastic thin film NiTi samples covered locally with Tantalum structures of different thickness and different shape. These multilayer devices were characterized regarding their mechanical and corrosion properties as well as their X-ray visibility. The superelastic behavior of the underlying NiTi layer is impeded by the Ta layer, and shows therefore a dependence on the Tantalum patterning geometry and thickness. No delamination was observed after mechanical and corrosion tests. The multilayers reveal excellent corrosion resistance, as well as a significant increase in radiopacity.

  4. Fabrication and Crystal Structure of Sol-Gel Deposited BST Thin Films with Compositional Gradient

    Directory of Open Access Journals (Sweden)

    Czekaj D.

    2017-06-01

    Full Text Available In the present research technology of compositionally graded barium strontium titanate Ba1-xSrxTiO3 thin films deposited on stainless steel substrates by sol-gel spin coating followed with thermal annealing at T = 650°C is reported. Results of thermal behavior of the sol-gel derived powders with compositions used for fabrication of graded structure (i.e. with Sr mole fraction x = 0.5, 0.4 and 0.3 are described. X-ray diffraction studies of the phase composition and crystal structure of such complex thin film configuration are given. It was found that gel powders exhibited a large total weight loss of about Δm ≈ 44-47%. Three stages of weight loss took place at temperature ranges: below T ≈ 300°C, at ΔT ≈ 300-500°C and between T = 600°C and T = 800°C. Phase analysis has shown that the dominating phase is Ba0.67Sr0.33TiO3 compound while the second phase is Ba0.7Sr0.3TiO3 or Ba0.5Sr0.5TiO3 for “up-graded” and “down-graded” structure, respectively.

  5. Fabrication of optochemical and electrochemical sensors using thin films of porphyrin and phthalocyanine derivatives

    Indian Academy of Sciences (India)

    Palanisamy Kalimuthu; Arumugam Sivanesan; S Abraham John

    2012-11-01

    This paper describes the fabrication of thin films of porphyrin and metallophthalocyanine derivatives on different substrates for the optochemical detection of HCl gas and electrochemical determination of L-cysteine (CySH). Solid state gas sensor for HCl gas was fabricated by coating meso-substituted porphyrin derivatives on glass slide and examined optochemical sensing of HCl gas. The concentration of gaseous HCl was monitored from the changes in the absorbance of Soret band. Among the different porphyrin derivatives, meso-tetramesitylporphyrin (MTMP) coated film showed excellent sensitivity towards HCl and achieved a detection limit of 0.03 ppm HCl. Further, we have studied the self-assembly of 1,8,15,22-tetraaminometallophthalocyanine (4-MTAPc; M = Co and Ni) from DMF on GC electrode. The CVs for the self-assembled monolayers (SAMs) of 4-CoIITAPc and 44-NiIITAPc show two pairs of well-defined redox couple corresponding to metal and ring. Using the 4-CoIITAPc SAM modified electrode, sensitive and selective detection of L-cysteine was demonstrated. Further, the SAM modified electrode also successfully separates the oxidation potentials of AA and CySH with a peak separation of 320mV.

  6. Method of fabricating conductive electrodes on the front and backside of a thin film structure

    Science.gov (United States)

    Tabada, Phillipe J.; Tabada, legal representative, Melody; Pannu, Satinderpall S.

    2011-05-22

    A method of fabricating a thin film device having conductive front and backside electrodes or contacts. Top-side cavities are first formed on a first dielectric layer, followed by the deposition of a metal layer on the first dielectric layer to fill the cavities. Defined metal structures are etched from the metal layer to include the cavity-filled metal, followed by depositing a second dielectric layer over the metal structures. Additional levels of defined metal structures may be formed in a similar manner with vias connecting metal structures between levels. After a final dielectric layer is deposited, a top surface of a metal structure of an uppermost metal layer is exposed through the final dielectric layer to form a front-side electrode, and a bottom surface of a cavity-filled portion of a metal structure of a lowermost metal layer is also exposed through the first dielectric layer to form a back-side electrode.

  7. Peel-and-stick: mechanism study for efficient fabrication of flexible/transparent thin-film electronics.

    Science.gov (United States)

    Lee, Chi Hwan; Kim, Jae-Han; Zou, Chenyu; Cho, In Sun; Weisse, Jeffery M; Nemeth, William; Wang, Qi; van Duin, Adri C T; Kim, Taek-Soo; Zheng, Xiaolin

    2013-10-10

    Peel-and-stick process, or water-assisted transfer printing (WTP), represents an emerging process for transferring fully fabricated thin-film electronic devices with high yield and fidelity from a SiO2/Si wafer to various non-Si based substrates, including papers, plastics and polymers. This study illustrates that the fundamental working principle of the peel-and-stick process is based on the water-assisted subcritical debonding, for which water reduces the critical adhesion energy of metal-SiO2 interface by 70 ~ 80%, leading to clean and high quality transfer of thin-film electronic devices. Water-assisted subcritical debonding is applicable for a range of metal-SiO2 interfaces, enabling the peel-and-stick process as a general and tunable method for fabricating flexible/transparent thin-film electronic devices.

  8. Fabrication of Rubrene Thin Film Transistor on Polystyrene Irradiated by Electron Beam

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jae Joon; Park, Jiwon; Cho, Sung Oh [Korea Advanced Institute of Science and Technology, Daejeon (Korea, Republic of); Lee, Hyeok Moo [LG Chem Research Park Battery Tech Center, Daejeon (Korea, Republic of); Lee, Junghwi; Cho, Sung Oh [Hanbat National Univ., Daejeon (Korea, Republic of)

    2014-05-15

    We present an unprecedented method to fabricate high-crystalline rubrene TFTs by combining of the abrupt heating technique and the polystyrene buffer layer irradiated by electron beam. For this PS buffer layer, we irradiated electron beam of optimized fluences. By electron beam irradiation, the hydrocarbon chains of PS were cross-linked without any initiators or agents, and chain segmental motions of PS were appeared at the irradiated area. Subsequently, abrupt heating of samples changed the crystalline phase of rubrene from as-deposited amorphous to orthorhombic phase only at irradiated samples without giving any damage to semiconductor. In summary, we have presented an unconventional approach to fabricate crystalline rubrene active layers and high quality rubrene thin film transistors. By using electron beam irradiation of PS and subsequent crystallization induced by abrupt heating, orthorhombic phase rubrene with high crystalline quality was fabricated successfully. We believe that this unprecedented technique using crosslinking of dielectric layer can be applied to not only PS but also many polymeric materials which can be cross-linked by electron beam. Furthermore, we could expect that by patterning of electron beam, in other words selective irradiation of electron beam, patterned rubrene with high resolution can be realized by adopting direct electron beam lithography techniques.

  9. Fabrication of nanoelectromechanical systems via the integration of high surface area glancing angle deposition thin films

    Science.gov (United States)

    Westwood, J. N.; Sauer, V. T. K.; Kwan, J. K.; Hiebert, W. K.; Sit, J. C.

    2014-06-01

    Nanoelectromechanical systems (NEMS) coated with a high surface area thin film are fabricated. Glancing angle deposition (GLAD) is used to uniformly deposit high surface area, nanostructured SiO2 films on top of released NEMS. The resonance frequencies and quality factors are measured to assess the potential of the high surface area NEMS for sensing experiments. Resonance frequencies of coated cantilevers, although reduced by mass loading, can be predicted accurately using our derived model. Compressive stress makes the resonance frequencies of coated doubly-clamped beams difficult to predict. The quality factors of the coated NEMS are reduced by one order of magnitude by a quasi-continuous layer at the base of the GLAD film, which also introduces an estimated compressive stress of 5.3-9.3 MPa. The limit of detection is demonstrated to be ˜2 pg cm-2. With this successful proof-of-concept demonstration, we anticipate the future use of these devices as high surface area gravimetric mass sensors for applications such as gas chromatography.

  10. Fabrication of atomically smooth SrRuO3 thin films by laser molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    High-quality SrRuO3 (SRO) thin films and SrTiO3/SRO bilayer were grown epitaxially on SrTiO3 (STO)(001) substrates by laser molecular beam epitaxy. The results of in situ observation of reflection high-energy electron diffraction and ex situ X-ray diffraction θ -2θ scan indicate that the SRO thin films have good crystallinity. The measurements of atomic force microscopy and scan tunneling microscopy reveal that the surface of the SRO thin film is atomically smooth. The resistivity of the SRO thin film is 300 μΩ·cm at room temperature. Furthermore, the transmission electron microscopy study shows that the interfaces of STO/SRO and SRO/STO are very clear and no interfacial reaction layer was observed. The experimental results show that the SRO thin film is an excellent electrode material for devices based on perovskite oxide materials.

  11. Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing

    NARCIS (Netherlands)

    Fujii, M.; Ishikawa, Y.; Ishihara, R.; Van der Cingel, J.; Mofrad, M.R.T.; Horita, M.; Uraoka, Y.

    2013-01-01

    In this study, we successfully achieved a relatively high field-effect mobility of 37.7 cm2/Vs in an InZnO thin-film transistor (TFT) fabricated by excimer layer annealing (ELA). The ELA process allowed us to fabricate such a high-performance InZnO TFT at the substrate temperature less than 50 °C ac

  12. Chemical fabrication of p-type Cu{sub 2}O transparent thin film using molecular precursor method

    Energy Technology Data Exchange (ETDEWEB)

    Nagai, Hiroki [Research Institute of Science and Technology, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015 (Japan); Suzuki, Tatsuya [Department of Applied Chemistry and Chemical Engineering, Graduate School of Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015 (Japan); Hara, Hiroki; Mochizuki, Chihiro; Takano, Ichiro; Honda, Tohru [Research Institute of Science and Technology, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015 (Japan); Sato, Mitsunobu, E-mail: lccsato@cc.kogakuin.ac.jp [Research Institute of Science and Technology, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015 (Japan)

    2012-11-15

    A transparent p-type Cu{sub 2}O thin film of 50 nm thickness was successfully fabricated by means of a solution-based process involving the thermal reaction of molecular precursor films spin-coated on a Na-free glass substrate. The precursor solution was prepared by the reaction of an isolated Cu{sup 2+} complex of ethylenediamine-N, N, N Prime , N Prime -tetraacetic acid with dibutylamine in ethanol. The Cu{sub 2}O thin films resulting from heat treatment of the precursor film at 450 Degree-Sign C for 10 min in Ar gas at a flow rate of 1.0 L min{sup -1} were characterized by X-ray diffraction which indicated a precise cubic lattice cell parameter of a = 0.4265(2) nm, with a crystallite size of 8(2) nm. X-ray photoelectron spectroscopy peaks, attributable to the O 1s and Cu 2p{sub 3/2} level of the Cu{sub 2}O film were found at 532.6 eV and 932.4 eV, respectively. An average grain size of the deposited Cu{sub 2}O particles of ca. 200 nm was observed via field-emission scanning electron microscopy. The optical band edge evaluated from the absorption spectrum of the Cu{sub 2}O transparent thin film was 2.3 eV, assuming a direct-transition semiconductor. Hall Effect measurements of the thin film indicated that the single-phase Cu{sub 2}O thin film is a typical p-type semiconductor, with a hole concentration of 1.7 Multiplication-Sign 10{sup 16} cm{sup -3} and hole mobility of 4.8 cm{sup 2} V{sup -1} s{sup -1} at ambient temperature. The activation energy from the valence band to the acceptor level determined from an Arrhenius plot was 0.34 eV. The adhesion strength of the thin film on the Na-free glass substrate was also determined as a critical load (Lc1) of 2.0 N by means of a scratch test. The method described is the first example of fabrication and characterization of a p-type Cu{sub 2}O transparent thin film by a wet process. -- Graphical abstract: The p-type Cu{sub 2}O transparent thin film was facilely fabricated on a Na-free grass substrate by a solution based

  13. Oegylated and cross-linking carbazole dendrons and dendrimers: Synthesis, characterization, assembly and thin film fabrication

    Science.gov (United States)

    Felipe, Mary Jane Legaspi

    2011-12-01

    Dendrimers and dendrons (fractional dendrimers) are macromolecular structures that have well-defined molecular weights and precise number of functional groups. Tailoring these structures has provided designer molecules that can be used for various applications including drug delivery, sensors, and anti-biofouling surfaces. Overall, this dissertation provides novel protocols for the understanding of molecular design, synthesis, and structure-property relationship of OEGylated and conjugated carbazole dendrons and dendrimers. In this design, the use of oligo(ethylene glycol) (OEG) allows for the fabrication of biocompatible materials and imparts hydrophilicity on the structure while the carbazole functionality allows the cross-linking of these designer molecules. Such fine-tuning of macromolecular structures leading to the fabrication of anti-biofouling thin films, nanostructuring at the air-water interface, and assembly into supramolecular superstructures are considered in this dissertation. Chapter 2 details the synthesis, characterization, and electrochemical cross-linking of OEGylated linear dendrons and "Janus-type" dendrimers. Cross-linking the carbazole moieties enables the deposition of these films on Au, indium tin oxide-coated glass, and doped silicon through cyclic voltammetry and provides films with secondary level of organization imparted by the inter- and intra-molecular interaction among the carbazole units. Chapter 3 describes the fabrication of nonspecific protein adsorption resistant surfaces through electrochemical grafting of three different dendrons on SAM carbazole-coated gold substrates. The predictable shape of each dendron and the ability to cross-link the carbazole units have enabled parametrization of OEG conformation and density on these interfaces. Chapter 4 demonstrates the fundamental architectural requirements for obtaining stable films with OEGylated linear dendron molecules providing a new architectural design of nanostructuring

  14. Fabrication and characterization of NiO thin films prepared by SILAR method

    Energy Technology Data Exchange (ETDEWEB)

    Akaltun, Yunus [Department of Electrical and Electronic Engineering, Erzincan University, 24100 Erzincan (Turkey); Çayır, Tuba [Department of Biomedical Engineering, Erzincan University, 24100 Erzincan (Turkey)

    2015-03-15

    Highlights: • NiO thin films have been deposited on glass substrates using SILAR method for the first time. • The electron effective mass, refractive index were calculated by using the energy bandgap values. • The effect of film thickness on the structural, optical and electrical properties were studied. • The bandgap values of the films decreased from 3.71 to 3.67 eV. - Abstract: NiO thin films were synthesised on glass substrates at room temperature using the Successive Ionic Layer Adsorption and Reaction (SILAR) method. The effect of film thickness on the structural, morphological, optical and electrical properties of NiO thin films was investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all the films exhibit polycrystalline structure are covered well with glass substrates. The crystalline and surface properties of the films improved with increasing film thickness. The energy band gap values were decreased from 3.71 to 3.67 eV depending on the film thickness. The refractive index (n), optical static (ε{sub o}) and high frequency dielectric constant (ε{sub ∞}) values were calculated by using the energy band gap values as a function of the film thickness. The resistivity of the films varied between 4.1 and 802.1 Ω cm with increasing film thickness at room temperature.

  15. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

    Science.gov (United States)

    Nomura, Kenji; Ohta, Hiromichi; Takagi, Akihiro; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

    2004-11-01

    Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H) and organic semiconductors have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material-namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)-for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10cm2V-1s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6-9cm2V-1s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.

  16. Design, fabrication and optical characterization of photonic crystal assisted thin film monocrystalline-silicon solar cells.

    Science.gov (United States)

    Meng, Xianqin; Depauw, Valérie; Gomard, Guillaume; El Daif, Ounsi; Trompoukis, Christos; Drouard, Emmanuel; Jamois, Cécile; Fave, Alain; Dross, Frédéric; Gordon, Ivan; Seassal, Christian

    2012-07-02

    In this paper, we present the integration of an absorbing photonic crystal within a monocrystalline silicon thin film photovoltaic stack fabricated without epitaxy. Finite difference time domain optical simulations are performed in order to design one- and two-dimensional photonic crystals to assist crystalline silicon solar cells. The simulations show that the 1D and 2D patterned solar cell stacks would have an increased integrated absorption in the crystalline silicon layer would increase of respectively 38% and 50%, when compared to a similar but unpatterned stack, in the whole wavelength range between 300 nm and 1100 nm. In order to fabricate such patterned stacks, we developed an effective set of processes based on laser holographic lithography, reactive ion etching and inductively coupled plasma etching. Optical measurements performed on the patterned stacks highlight the significant absorption increase achieved in the whole wavelength range of interest, as expected by simulation. Moreover, we show that with this design, the angle of incidence has almost no influence on the absorption for angles as high as around 60°.

  17. Using Flexible Polyimide as a Substrate to Deposit ZnO:Ga Thin Films and Fabricate p-i-n α-Si:H Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Fang-Hsing Wang

    2013-01-01

    Full Text Available The GZO thin films were deposited on the polyimide (PI substrates to investigate their properties for the possibly flexible applications. The effects of substrate temperature (from room temperature to 200°C on the surface and cross-session morphologies, X-ray diffraction pattern, optical transmission spectrum, carrier concentration, carrier mobility, and resistivity of the GZO thin films on PI substrates were studied. The measured results showed that the substrate temperature had large effect on the characteristics of the GZO thin films. The cross-section observations really indicated that the GZO thin films deposited at 200°C and below had different crystalline structures. The value variations in the films’ optical band gap (Eg of the GZO thin films were evaluated from plots of  (αhν2=c(hν-Eg, revealing that the measured Eg values increased with increasing deposition temperature. Finally, the prepared GZO thin films were also used as the transparent electrodes to fabricate the α-Si amorphous silicon thin-film solar cells on the flexible PI substrates, and the properties of which were also measured. We would also prove that substrate temperature of the GZO thin films had large effect on the characteristics of the fabricated α-Si amorphous silicon thin-film solar cells.

  18. Fabrication and characterization of high-mobility solution-based chalcogenide thin-film transistors

    KAUST Repository

    Mejia, Israel I.

    2013-01-01

    We report device and material considerations for the fabrication of high-mobility thin-film transistors (TFTs) compatible with large-area and inexpensive processes. In particular, this paper reports photolithographically defined n-type TFTs (n-TFTs) based on cadmium sulfide (CdS) films deposited using solution-based techniques. The integration process consists of four mask levels with a maximum processing temperature of 100 °C. The TFT performance was analyzed in terms of the CdS semiconductor thickness and as a function of postdeposition annealing in a reducing ambient. The IonI off ratios are ∼107 with field-effect mobilities of ∼5.3 and ∼4.7cm2V̇s for Al and Au source-drain contacts, respectively, using 70 nm of CdS. Transmission electron microscopy and electron energy loss spectroscopy were used to analyze the CdS-metal interfaces. © 1963-2012 IEEE.

  19. Electrodeposition-Based Fabrication and Characteristics of Tungsten Trioxide Thin Film

    Directory of Open Access Journals (Sweden)

    Li Lin

    2016-01-01

    Full Text Available In this study, tungsten trioxide (WO3 thin films were electrodeposited on indium tin oxide (ITO glass to form WO3-coated glass. The electrodeposition (ED time (tED and ED current (IED were varied to control the film thickness and morphology. Furthermore, the crystallization of the thin films was controlled by annealing them at 250°C, 500°C, and 700°C. The results showed that the thickness of the WO3 thin films increased with tED and IED. The as-deposited thin films and those annealed at 250°C were amorphous, whereas the WO3 thin films annealed at 500 and 700°C were in the anorthic phase. Moreover, the amorphous WO3-coated glass exhibited high transmittance in visible light and low transmittance in near-infrared light, whereas the anorthic WO3-coated glass had high transmittance in near-infrared light. An empirical formula for determining the thickness of WO3 thin films was derived through multiple regressions of the ED process parameters.

  20. Fabrication and Characterization of High-Crystalline Nanoporous ZnO Thin Films by Modified Thermal Evaporation System

    Science.gov (United States)

    Islam, M. S.; Hossain, M. F.; Razzak, S. M. A.; Haque, M. M.; Saha, D. K.

    2016-05-01

    The aim of this work is to fabricate high-crystalline nanoporous zinc oxide (ZnO) thin films by a modified thermal evaporation system. First, zinc thin films have been deposited on bare glass substrate by the modified thermal evaporation system with pressure of 0.05mbar, source-substrate distance of 3cm and source temperature 700∘C. Then, high-crystalline ZnO thin film is obtained by annealing at 500∘C for 2h in atmosphere. The prepared ZnO films are characterized with various deposition times of 10min and 20min. The structural property was investigated by X-ray diffractometer (XRD). The optical bandgap and absorbance/transmittance of these films are examined by ultraviolet/visible spectrophotometer. The surface morphological property has been observed by scanning electron microscope (SEM). ZnO films have showed uniform nanoporous surface with high-crystalline hexagonal wurtzite structure. The ZnO films prepared with 20min has excitation absorption-edge at 369nm, which is blueshifted with respect to the bulk absorption-edge appearing at 380nm. The gap energy of ZnO film is decreased from 3.14eV to 3.09eV with increase of the deposition time, which can enhance the excitation of ZnO films by the near visible light, and is suitable for the application of photocatalyst of waste water cleaning and polluted air purification.

  1. Electrical Properties of (Pb, La)TiO3 Thin Films Fabricated by Multiple Cathode Sputtering

    Science.gov (United States)

    Maiwa, Hiroshi; Ichinose, Noboru; Okazaki, Kiyoshi

    1994-11-01

    (Pb, La)TiO3 (PLT, La/Ti=0.17) thin films were prepared by multiple cathode rf-magnetron sputtering. The electrical properties of these films were investigated. The PLT thin films deposited on Pt/MgO substrates exhibited higher crystallinity and better ferroelectric properties, compared to the films deposited on Pt/SiO2/Si substrates. The hysteresis loops of the PLT films on RuO2/Ru/SiO2/Si or RuO2/Ru/MgO were narrow compared to that of film deposited on platinum electrodes. The dielectric constant of PLT films deposited at 540° C decreased with decreasing film thickness. Existence of a Pb-deficient layer near the film/substrate interface was observed by X-ray photoemission spectroscopy (XPS) analysis. By lowering the substrate temperature to 515° C, Pb re-evaporation from the substrate decreased, and ferroelectric properties were improved. By controlling the Pb/Ti incident ratio, thin films with different Pb contents of the interface layer were formed. With an increase in the Pb content near the film/substrate interface, the fatigue resistance increased.

  2. MAPLE fabrication of thin films based on kanamycin functionalized magnetite nanoparticles with anti-pathogenic properties

    Science.gov (United States)

    Grumezescu, Valentina; Andronescu, Ecaterina; Holban, Alina Maria; Mogoantă, Laurenţiu; Mogoşanu, George Dan; Grumezescu, Alexandru Mihai; Stănculescu, Anca; Socol, Gabriel; Iordache, Florin; Maniu, Horia; Chifiriuc, Mariana Carmen

    2015-05-01

    In this study we aimed to evaluate the biocompatibility and antimicrobial activity of kanamycin functionalized 5 nm-magnetite (Fe3O4@KAN) nanoparticles thin films deposited by Matrix Assisted Pulsed Laser Evaporation (MAPLE) technique. A laser deposition regime was established in order to stoichiometrically transfer Fe3O4@KAN thin films on silicone and glass substrates. Morphological and physico-chemical properties of powders and coatings were characterized by XRD, TEM, SEM, AFM and IR microscopy (IRM). Our nanostructured thin films have proved efficiency in the prevention of microbial adhesion and mature biofilms development as a result of antibiotic release in its active form. Furthermore, kanamycin functionalized nanostructures exhibit a good biocompatibility, both in vivo and in vitro, demonstrating their potential for implants application. This is the first study reporting the assessment of the in vivo biocompatibility of a magnetite-antimicrobial thin films produced by MAPLE technique.

  3. Fabrication and characterization of nanometer thin films for low-voltage DEAs

    OpenAIRE

    2016-01-01

    Nanometer-thin films are the essential components of a low-voltage dielectric elastomer actuator (DEA). Comprising of two electrodes sandwiching a dielectric elastomeric material DEAs have evoked versatile materials research. Before choosing the materials used to manufacture low-voltage DEAs one should carefully consider the targeted application. This project aims at finding new techniques to realize nanometer-thin films to obtain low-voltage DEAs with possible future application as artificia...

  4. Graphene-doped PEDOT:PSS nanocomposite thin films fabricated by conventional and substrate vibration-assisted spray coating (SVASC

    Directory of Open Access Journals (Sweden)

    Firuze Soltani-kordshuli

    2016-09-01

    Full Text Available In this paper, successful fabrication of highly conductive transparent graphene-doped PEDOT:PSS composite thin films is reported for the first time, using conventional and substrate vibration-assisted ultrasonic spray coating (SVASC. To suppress the challenges associated with spraying of the precursor solution containing graphene, graphene sheets were broken by sonication and were uniformly dispersed and stabilized in PEDOT:PSS aqueous solution using isopropyl alcohol (IPA. The mechanism of dispersion of graphene in PEDOT:PSS aqueous solution using IPA is elucidated. The maximum electrical conductivity of 298 S.cm−1 was obtained for a graphene-doped PEDOT:PSS thin film, which compared to the pristine PEDOT:PSS thin films shows a ten-fold increase, with a transparency comparable to that of the indium tin oxide (ITO-coated glass.

  5. Sol-gel fabrication of lithium doped zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Oral, A.Y.; Bahsi, Z.B. [Dept. of Materials Science and Engineering, Gebze Inst. of Tech., Kocaeli (Turkey); Aslan, M.H.; Basaran, E. [Dept. of Physics, Gebze Inst. of Tech., Kocaeli (Turkey)

    2004-07-01

    Li doped zinc oxide thin films were deposited on glass substrates by a sol-gel technique. Acetates of zinc and lithium were used as metal sources. A homogeneous and stable solution was prepared by dissolving acetates in the solution of 2-propanol and ethanolamine. ZnO:Li thin films were obtained after preheating the spin coated films at 250 C for 1 minute after each coating. A post annealing between 450-600 C was applied after the deposition of the last layers. XRD analysis revealed ZnO with zincite structure (Card no: 36-1451) in all films. The thickness of the films was measured as 75 nm per layer. The optical band gap of the films increased as doping concentration of Li increased and decreased as the post-annealing temperature increased. (orig.)

  6. Enhanced UV-sensitivity of vis-responsive anatase thin films fabricated by using precursor solutions involving Ti complexes

    Energy Technology Data Exchange (ETDEWEB)

    Nagai, Hiroki; Mochizuki, Chihiro; Hara, Hiroki; Sato, Mitsunobu [Coordination Engineering Laboratory, Faculty of Engineering, Kogakuin University, 2665-1 Nakano, Hachioji City, Tokyo 192-0015 (Japan); Takano, Ichiro [Department of Electrical Engineering, Kogakuin University, 2665-1 Nakano, Hachioji City, Tokyo 192-0015 (Japan)

    2008-09-15

    Fabrication of vis-responsive anatase thin films with enhanced UV-sensitivity was attained on an ITO pre-coated glass substrate by applying two precursor solutions involving Ti complexes of oxalic acid and EDTA. The transparent and crack-free thin films were characterized by XRD, XPS, UV-vis and FE-SEM observation. The highest sensitivity to UV light of the vis-responsive film, whose photocatalytic activity was measured by the decomposition rate of methylene blue, was four times as compared with that formed by a sol-gel method under the same conditions. The vis-responsive films showed a characteristic absorption band at around 480 nm. (author)

  7. Antimicrobial activity of biopolymeric thin films containing flavonoid natural compounds and silver nanoparticles fabricated by MAPLE: A comparative study

    Energy Technology Data Exchange (ETDEWEB)

    Cristescu, R., E-mail: rodica.cristescu@inflpr.ro [National Institute for Lasers, Plasma & Radiation Physics, Lasers Department, P.O. Box MG-36, Bucharest-Magurele (Romania); Visan, A.; Socol, G. [National Institute for Lasers, Plasma & Radiation Physics, Lasers Department, P.O. Box MG-36, Bucharest-Magurele (Romania); Surdu, A.V.; Oprea, A.E.; Grumezescu, A.M. [Faculty of Applied Chemistry and Materials Science, Politehnica University of Bucharest, 1–7 Polizu Street, Bucharest, 011061 Romania (Romania); Chifiriuc, M.C. [Microbiology Immunology Department, Faculty of Biology, Research Institute of the University of Bucharest - ICUB, Bucharest, 77206 (Romania); Boehm, R.D.; Yamaleyeva, D.; Taylor, M.; Narayan, R.J. [Department of Biomedical Engineering, University of North Carolina, Chapel Hill, NC (United States); Chrisey, D.B. [Department of Physics and Engineering Physics, Tulane University, New Orleans, LA (United States)

    2016-06-30

    Highlights: • We successfully deposited composite quercetin dehydrate-, resveratrol- and silver nanoparticle-polyvinylpyrrolidone thin coatings with chemical structure close to that of the starting materials by MAPLE. • Thin film morphology studies revealed a uniform surface without aggregates or grains on the top of the surface. • MAPLE-deposited thin films exhibited antibacterial activity against Gram-positive and Gram-negative bacterial strains. • We demonstrated the potential use of these hybrid systems and MAPLE deposition method for the development of new harmless, ecological antimicrobial strategies. - Abstract: The purpose of this study was to investigate the interactions between microorganisms, including the planktonic and adherent organisms, and biopolymer (polyvinylpyrrolidone), flavonoid (quercetin dihydrate and resveratrol)-biopolymer, and silver nanoparticles-biopolymer composite thin films that were deposited using matrix assisted pulsed laser evaporation (MAPLE). A pulsed KrF{sup *} excimer laser source was used to deposit the aforementioned composite thin films, which were characterized using Fourier transform infrared spectroscopy (FT-IR), infrared microscopy (IRM), scanning electron microscopy (SEM), Grazing incidence X-ray diffraction (GIXRD) and atomic force microscopy (AFM). The antimicrobial activity of thin films was quantified using an adapted disk diffusion assay against Gram-positive and Gram-negative bacteria strains. FT-IR, AFM and SEM studies confirmed that MAPLE may be used to fabricate thin films with chemical properties corresponding to the input materials as well as surface properties that are appropriate for medical use. The silver nanoparticles and flavonoid-containing films exhibited an antimicrobial activity both against Gram-positive and Gram-negative bacterial strains demonstrating the potential use of these hybrid systems for the development of novel antimicrobial strategies.

  8. Magnetic properties of pure and Fe doped HoCrO3 thin films fabricated via a solution route

    Science.gov (United States)

    Yin, Shiqi; Sauyet, Theodore; Guild, Curt; Suib, S. L.; Jain, Menka

    2017-04-01

    Multiferroic properties of orthorhombically distorted perovskite rare-earth chromites, such as HoCrO3, are being investigated extensively in recent years. In the present work, we report on the effect of Fe substitution on the magnetic properties of HoCrO3 thin films. Thin films of HoCrO3 and HoCr0.7Fe0.3O3 were fabricated via a solution route on platinized silicon substrates. Structural properties of the films were evaluated by X-ray diffraction and Raman spectroscopy techniques. The surface morphology and cross-sections of the films were examined using scanning electron microscopy. Optical band gaps of pure and Fe doped HoCrO3 films are found to be 3.45 eV and 3.39 eV, respectively. The magnetization measurements show that the Néel temperatures (where Cr3+ orders) for the HoCrO3 and HoCr0.7Fe0.3O3 films are 134 and 148 K, respectively. In a magnetic field of 2 T, the maximum entropy change and relative cooling power, two parameters to evaluate the magnetocaloric properties of a material, were 0.813 J/kg K at 11 K and 21.1 J/kg for HoCrO3 film, in comparison with 0.748 J/kg K at 15 K and 26.8 J/kg for HoCr0.7Fe0.3O3 film. To our knowledge, this is the first work exploring the band gap and magnetocaloric properties of rare-earth chromite thin films. These findings should inspire the development of rare-earth chromite thin films for temperature control of nanoscale electronic devices and sensors in the low temperature region (< 30 K).

  9. Fabrication of AlN thin films on different substrates at ambient temperature

    CERN Document Server

    Cai, W X; Wu, P H; Yang, S Z; Ji, Z M

    2002-01-01

    Aluminium nitride (AlN) is very useful as a barrier in superconductor-insulator-superconductor (SIS) device or as an insulating layer in many other applications. At ambient temperature, we deposit AlN thin films onto different substrates (such as MgO, LaAlO sub 3 and Si) by using radio-frequency magnetron sputtering and pure Al target. X-ray diffraction (XRD) and PHI-scan patterns show that the films grown on MgO substrates are excellent epitaxial films with (101) orientation of a hexagonal lattice. A possible structure of the interface between the film and the substrate is suggested and discussed.

  10. Fabrication of ZnF{sub 2} thin films and their vacuum ultraviolet transparency

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Issei [Division of Material and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Omata, Takahisa, E-mail: omata@mat.eng.osaka-u.ac.jp [Division of Material and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Shiratsuchi, Yu; Nakatani, Ryoichi [Division of Material and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Kitamura, Naoyuki [Research Institute for Ubiquitous Energy Devices, National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan); Otsuka-Yao-Matsuo, Shinya [Division of Material and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)

    2013-05-01

    ZnF{sub 2} thin films were deposited on SiO{sub 2}-glass and Al{sub 2}O{sub 3}-single crystal substrates using electron-beam evaporation, and the morphology of the films was studied in relation to the kind of substrate and deposition conditions. While the films deposited on SiO{sub 2}-glass, (112{sup ¯}0)-Al{sub 2}O{sub 3} substrates exhibited an almost non-oriented polycrystalline nature, the films deposited on (0001)-Al{sub 2}O{sub 3} substrates were epitaxially grown (100)-oriented films. The full-width at half maximum of the rocking curve of (200)-diffraction for the (100)-oriented film deposited at 400 °C was 150″. This value was comparatively small compared with previously reported (100)-oriented SnO{sub 2} and TiO{sub 2} films and showed the high orientation and crystallinity of the ZnF{sub 2} film. From the transmission spectra from near-infrared (NIR) to vacuum ultraviolet (VUV), the optical band gap of the ZnF{sub 2} was evaluated to be 6.7 eV, and the films exhibited high transparency in the wide range from NIR to VUV. We discuss the potential of the film as a transparent conducting material in the VUV region. - Highlights: • ZnF{sub 2} thin films deposited on both sapphire and SiO{sub 2}-glass substrates. • (100)-oriented epitaxial film was obtained on (0001)-sapphire substrate. • The optical band gap of the ZnF{sub 2} film was 6.7 eV. • Potential of the film as transparent electrodes in the VUV region is discussed.

  11. Fabrication and characterization of highly luminescent Er3+:Al2O3 thin films with optimized growth parameters

    Science.gov (United States)

    Nayar, Priyanka; Zhu, Xue-Yi; Yang, Fuyi; Lu, Minghui; Lakshminarayana, G.; Liu, Xiao Ping; Chen, Yan-Feng; Kityk, I. V.

    2016-10-01

    Erbium doped amorphous alumina thin films were fabricated using Co-sputtering technique in various depositions runs with varying parameters for optimizing the deposition parameters to obtain the films with best optical performance. The main subject of investigation includes the effects of change in various deposition parameters such as substrate heating, radio frequency (RF) power and oxygen pressure inside the chamber while deposition. High quality as-deposited films with various Er concentrations and low carbon content have been confirmed by XPS. Substrate heating ∼500 °C was found to be very effective in getting highly dense films with high refractive index of 1.70 at 1530-1570 nm emission band. The Er3+-doped films showed very intense near-infrared luminescence peak at 1550 nm even without any post-deposition annealing treatment.

  12. Fabrication of Mg-doped ZnO thin films by laser ablation of Zn:Mg target

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Tae Hyun; Park, Jin Jae; Nam, Sang Hwan; Park, Hye Sun; Cheong, Nu Ri [Department of Chemistry, Kyunghee University, Seoul 130-701 (Korea, Republic of); Song, Jae Kyu [Department of Chemistry, Kyunghee University, Seoul 130-701 (Korea, Republic of)], E-mail: jaeksong@khu.ac.kr; Park, Seung Min [Department of Chemistry, Kyunghee University, Seoul 130-701 (Korea, Republic of)], E-mail: smpark@khu.ac.kr

    2009-03-01

    Mg-doped ZnO thin films were fabricated by laser ablation of Zn:Mg targets consisting of Mg metallic strips and Zn disk in oxygen atmosphere with a goal to facilitate convenient control of Mg contents in the films. The characteristics of the deposited films were examined by analyzing their photoluminescence (PL), X-ray diffraction and X-ray photoelectron spectroscopy (XPS) spectra. Mg contents as analyzed by XPS indicate that the target composition is fairly transferred to the deposited films. The wurtzite structure of ZnO was conserved even for the highly doped ZnO films and there was no Mg- or MgO-related XRD peaks. With increase in the Mg content, the bandgap and PL peak energy shifted to blue and the Stokes shift became larger.

  13. In situ fabrication of high-Tc Y-Ba-Cu-O thin film by resistive evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Azoulay, J. (Centre for Technological Education, Holon (Israel) Raymond and Beverly Sackler Faculty of Exact Sciences, Tel Aviv Univ. (Israel))

    1992-11-20

    We have recently used a simple conventional oil-pumped vacuum system equipped with a resistively heated boat for in situ fabrication of Y-Ba-Cu-O high Tc superconductivity phase thin films at a relatively low substrate temperature. A well-ground mixture of yttrium, BaF[sub 2] and copper, weighed in the atomic proportion to yield a stoichiometric YBa[sub 2]Cu[sub 3]O[sub 7-[delta

  14. How do evaporating thin films evolve? Unravelling phase-separation mechanisms during solvent-based fabrication of polymer blends

    KAUST Repository

    Wodo, Olga

    2014-10-13

    © 2014 AIP Publishing LLC. Solvent-based fabrication is a flexible and affordable approach to manufacture polymer thin films. The properties of products made from such films can be tailored by the internal organization (morphology) of the films. However, a precise knowledge of morphology evolution leading to the final film structure remains elusive, thus limiting morphology control to a trial and error approach. In particular, understanding when and where phases are formed, and how they evolve would provide rational guidelines for more rigorous control. Here, we identify four modes of phase formation and subsequent propagation within the thinning film during solvent-based fabrication. We unravel the origin and propagation characteristics of each of these modes. Finally, we construct a mode diagram that maps processing conditions with individual modes. The idea introduced here enables choosing processing conditions to tailor film morphology characteristics and paves the ground for a deeper understanding of morphology control with the ultimate goal of precise, yet affordable, morphology manipulation for a large spectrum of applications.

  15. Antimicrobial activity of biopolymeric thin films containing flavonoid natural compounds and silver nanoparticles fabricated by MAPLE: A comparative study

    Science.gov (United States)

    Cristescu, R.; Visan, A.; Socol, G.; Surdu, A. V.; Oprea, A. E.; Grumezescu, A. M.; Chifiriuc, M. C.; Boehm, R. D.; Yamaleyeva, D.; Taylor, M.; Narayan, R. J.; Chrisey, D. B.

    2016-06-01

    The purpose of this study was to investigate the interactions between microorganisms, including the planktonic and adherent organisms, and biopolymer (polyvinylpyrrolidone), flavonoid (quercetin dihydrate and resveratrol)-biopolymer, and silver nanoparticles-biopolymer composite thin films that were deposited using matrix assisted pulsed laser evaporation (MAPLE). A pulsed KrF* excimer laser source was used to deposit the aforementioned composite thin films, which were characterized using Fourier transform infrared spectroscopy (FT-IR), infrared microscopy (IRM), scanning electron microscopy (SEM), Grazing incidence X-ray diffraction (GIXRD) and atomic force microscopy (AFM). The antimicrobial activity of thin films was quantified using an adapted disk diffusion assay against Gram-positive and Gram-negative bacteria strains. FT-IR, AFM and SEM studies confirmed that MAPLE may be used to fabricate thin films with chemical properties corresponding to the input materials as well as surface properties that are appropriate for medical use. The silver nanoparticles and flavonoid-containing films exhibited an antimicrobial activity both against Gram-positive and Gram-negative bacterial strains demonstrating the potential use of these hybrid systems for the development of novel antimicrobial strategies.

  16. Fabrication of the CuInGaSe Pellet and Characterization of the Thin Film

    Science.gov (United States)

    Jeon, Hunsoo; Lee, Ahreum; Lee, Gang-Seok; Jo, Dong-Wan; Ok, Jin-Eun; Kim, Kyoung Hwa; Yang, Min; Yi, Sam Nyung; Ahn, Hyung Soo; Cho, Chae-Ryong; Kim, Suck-Whan; Ha, Hong-Ju

    2011-01-01

    CuInGaSe (CIGS) mixed-source was prepared by hydride vapor transport method (HVT). The new source synthesis method was attempted by mixing several metals such as Cu, In, Ga, and Se with 3:5:1:4 mass ratios. This mixed-source was soaked at 1090 °C for 90 min in nitrogen atmosphere. Then, the CIGS was grinded up and formed the state of powder and the CIGS pellet was made by pressure machine. The diameter of pellet is 10 mm. The CIGS thin film was deposited on soda lime glass with evaporated molybdenum layer by e-beam evaporating this CIGS pellet. For crystallization of CIGS thin film, we measured scanning electron microscope (SEM), energy dispersive spectroscopy (EDS), and X-ray diffraction (XRD). High intensity X-ray peaks diffracted from (112), (204)/(220), (116)/(312), and (400) of CIGS thin film and from (110) of Mo were confirmed by XRD measurement.

  17. Fabrication of InGaN thin-film transistors using pulsed sputtering deposition.

    Science.gov (United States)

    Itoh, Takeki; Kobayashi, Atsushi; Ueno, Kohei; Ohta, Jitsuo; Fujioka, Hiroshi

    2016-07-07

    We report the first demonstration of operational InGaN-based thin-film transistors (TFTs) on glass substrates. The key to our success was coating the glass substrate with a thin amorphous layer of HfO2, which enabled a highly c-axis-oriented growth of InGaN films using pulsed sputtering deposition. The electrical characteristics of the thin films were controlled easily by varying their In content. The optimized InGaN-TFTs exhibited a high on/off ratio of ~10(8), a field-effect mobility of ~22 cm(2) V(-1) s(-1), and a maximum current density of ~30 mA/mm. These results lay the foundation for developing high-performance electronic devices on glass substrates using group III nitride semiconductors.

  18. Fabrication of Highly Ordered Polymeric Nanodot and Nanowire Arrays Templated by Supramolecular Assembly Block Copolymer Nanoporous Thin Films

    Directory of Open Access Journals (Sweden)

    Liu Xikui

    2009-01-01

    Full Text Available Abstract Realizing the vast technological potential of patternable block copolymers requires both the precise controlling of the orientation and long-range ordering, which is still a challenging topic so far. Recently, we have demonstrated that ordered nanoporous thin film can be fabricated from a simple supramolecular assembly approach. Here we will extend this approach and provide a general route to fabricate large areas of highly ordered polymeric nanodot and nanowire arrays. We revealed that under a mixture solvent annealing atmosphere, a near-defect-free nanoporous thin film over large areas can be achieved. Under the direction of interpolymer hydrogen bonding and capillary action of nanopores, this ordered porous nanotemplate can be properly filled with phenolic resin precursor, followed by curation and pyrolysis at middle temperature to remove the nanotemplate, a perfect ordered polymer nanodot arrays replication was obtained. The orientation of the supramolecular assembly thin films can be readily re-aligned parallel to the substrate upon exposure to chloroform vapor, so this facile nanotemplate replica method can be further extend to generate large areas of polymeric nanowire arrays. Thus, we achieved a successful sub-30 nm patterns nanotemplates transfer methodology for fabricating polymeric nanopattern arrays with highly ordered structure and tunable morphologies.

  19. Fabrication of pyrite FeS{sub 2} thin films by sulfurizing oxide precursor films deposited via successive ionic layer adsorption and reaction method

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Kaiwen; Su, Zhenghua; Yang, Jia; Han, Zili [School of Metallurgy and Environment, Central South University, Changsha 410083 (China); Liu, Fangyang, E-mail: liufangyang@csu.edu.cn [School of Metallurgy and Environment, Central South University, Changsha 410083 (China); School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052 (Australia); Lai, Yanqing; Li, Jie [School of Metallurgy and Environment, Central South University, Changsha 410083 (China); Engineering Research Center of High Performance Battery Materials and Devices, Research Institute of Central South University in Shenzhen, Shenzhen 518057 (China); Liu, Yexiang [School of Metallurgy and Environment, Central South University, Changsha 410083 (China)

    2013-09-02

    Iron pyrite (FeS{sub 2}) is a naturally abundant and nontoxic semiconductor that can potentially be used in photovoltaic devices. In this report, pure pyrite FeS{sub 2} thin films with homogeneous morphology and ideal composition are fabricated by sulfurizing Fe{sub 2}O{sub 3} precursor thin films deposited via successive ionic layer adsorption and reaction method. The formation mechanism of FeS{sub 2} is identified by X-ray photoelectron spectroscopy. The optical and electrical (including photoelectrochemical) measurements show that the prepared pyrite FeS{sub 2} thin films have high absorption coefficient, suitable band gap, p-type conductivity and good photo-electrical conversion ability. - Highlights: • FeS{sub 2} films were prepared based on successive ionic layer adsorption and reaction method. • XPS analysis revealed the formation mechanism of FeS{sub 2} films. • The FeS{sub 2} thin films are of pure pyrite structure and p-type conductivity. • The FeS{sub 2} thin films have suitable optical and electrical properties for solar cells.

  20. Fabrication and characterization of vacuum evaporated Al:CuSe2 thin films

    Science.gov (United States)

    Muthukannan, Abirami; Henry, J.; Sivakumar, G.; Mohanraj, K.

    2016-01-01

    We present first report on Al doped CuSe2 thin films deposited on to the glass substrate using elemental precursors Cu, Al and Se by thermal evaporation method. The structural, morphological and optoelectronic properties of the grown films were analysed by using XRD, SEM, AFM, UV-Visible and I-V analysis respectively. The XRD study of the annealed film showed polycrystalline nature. The predominant orientation along (1 0 1) direction corresponding to orthorhombic structure of CuSe2 with an additional phase of Al2Se3 along (-3 1 4) and (3 3 1) direction. The SEM and AFM images of the annealed film bears densely packed grains and the surface roughness is found to be about 21.16 nm respectively. The direct band gap and resistivity is decreased in annealed film when compared to the as-deposited film. It could be attributed to the influence of annealing process.

  1. Fabrication for multilayered composite thin films by dual-channel vacuum arc deposition.

    Science.gov (United States)

    Dai, Hua; Shen, Yao; Wang, Jing; Xu, Ming; Li, Liuhe; Li, Xiaoling; Cai, Xun; Chu, Paul K

    2008-06-01

    A flexible dual-channel curvilinear electromagnetic filter has been designed and constructed to fabricate multilayered composite films in vacuum arc ion plating. The filter possesses two guiding channels and one mixing unit. Multilayered TiN/AlN and TiAlN composite films can be produced by controlling the frequency or interval of the two cathodes. The x-ray photoelectron spectroscopy and low-angle x-ray diffraction results reveal the periodic Ti and Al structures in the TiN/AlN films. The TiAlN films exhibit a smooth surface morphology confirming effective filtering of macroparticles by the filter. High temperature oxidation conducted at 700 degrees C for an hour indicates that the weight increment in the TiAlN films produced by the dual filter is only half of that of the TiAlN films produced without a filter, thereby showing better resistance against surface oxidation.

  2. Fabrication for multilayered composite thin films by dual-channel vacuum arc deposition

    Science.gov (United States)

    Dai, Hua; Shen, Yao; Wang, Jing; Xu, Ming; Li, Liuhe; Li, Xiaoling; Cai, Xun; Chu, Paul K.

    2008-06-01

    A flexible dual-channel curvilinear electromagnetic filter has been designed and constructed to fabricate multilayered composite films in vacuum arc ion plating. The filter possesses two guiding channels and one mixing unit. Multilayered TiN /AlN and TiAlN composite films can be produced by controlling the frequency or interval of the two cathodes. The x-ray photoelectron spectroscopy and low-angle x-ray diffraction results reveal the periodic Ti and Al structures in the TiN /AlN films. The TiAlN films exhibit a smooth surface morphology confirming effective filtering of macroparticles by the filter. High temperature oxidation conducted at 700°C for an hour indicates that the weight increment in the TiAlN films produced by the dual filter is only half of that of the TiAlN films produced without a filter, thereby showing better resistance against surface oxidation.

  3. Fabrication of LSGM thin films on porous anode supports by slurry spin coating for IT-SOFC

    Institute of Scientific and Technical Information of China (English)

    Hong-Yan Sun; Wei Sen; Wen-Hui Ma; Jie Yu; Jian-Jun Yang

    2015-01-01

    La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) and La0.7 Sr0.3Cr0.5Mn0.5O3-δ (LSCM) powders were synthesized by glycine-nitrate process,and LSGM electrolyte thin film was successfully fabricated on porous anode substrate of LSCM by slurry spin coating technology.Some technical parameters for the preparation of LSGM thin films were systematically investigated,including ink composition,sintering temperature,and spin coating times.The electrolyte films with the best compactness and somewhat rough are obtained when the operating parameters are fixed as follows:the content of ethyl cellulose as binder is 5 wt%,the content of terpineol as modifier is 5 wt%,the optimum coating cycle number is 9 times,and the best post-deposition sintering temperature is 1,400 ℃ for 4 h.

  4. Design and fabrication of the thin-film micromirror array-actuated for large projection displays

    CERN Document Server

    Hwang, K H; Kim, S G

    1998-01-01

    The Thin-film Micromirror Array-actuated (TMA) is a new reflective type light modulator that uses micromachined thin film piezoelectric actuators in conjunction with over 300,000 micromirrors. A working prototype of TMA display system with three TMA modules shows the world best light efficiency at the present time, which is more than 7 lumen per watt light efficiency. Projectors and projection TVs with TMAs will be the most promising device which will provide clear display of electronic image at normal room light condition.

  5. Sample Fabrication and Experimental Approach for Studying Interfacial Sliding in Thin Film-Substrate Systems

    Science.gov (United States)

    2006-09-01

    Technology 14.5 (1998): 405-410. 19. Zuruzi, A. S., H. Li, and G. Dong. "Diffusion Bonding of Aluminium Alloy 6061 in Air Using an Interface...428. 18. Huang, Y., F. J. Humphreys, N. Ridley, and Z. C. Wang. "Diffusion Bonding of Hot Rolled 7075 Aluminium Alloy." Materials Science and...and Takashi Ohnishi. "Effect of Aluminium Oxide Caps on Hillock Formation in Aluminium Alloy Films." Thin Solid Films 349 (1999): 191-198. 53

  6. Fabrication of p-type conductivity in SnO{sub 2} thin films through Ga doping

    Energy Technology Data Exchange (ETDEWEB)

    Tsay, Chien-Yie, E-mail: cytsay@fcu.edu.tw; Liang, Shan-Chien

    2015-02-15

    Highlights: • P-type Ga-doped SnO{sub 2} semiconductor films were prepared by sol-gel spin coating. • Optical bandgaps of the SnO{sub 2}:Ga films are narrower than that of the SnO{sub 2} film. • SnO{sub 2}:Ga films exhibited p-type conductivity as Ga doping content higher than 10%. • A p-n heterojunction composed of p-type SnO{sub 2}:Ga and n-type ZnO:Al was fabricated. - Abstract: P-type transparent tin oxide (SnO{sub 2}) based semiconductor thin films were deposited onto alkali-free glass substrates by a sol-gel spin-coating method using gallium (Ga) as acceptor dopant. In this study, we investigated the influence of Ga doping concentration ([Ga]/[Sn] + [Ga] = 0%, 5%, 10%, 15%, and 20%) on the structural, optical and electrical properties of SnO{sub 2} thin films. XRD analysis results showed that dried Ga-doped SnO{sub 2} (SnO{sub 2}:Ga) sol-gel films annealed in oxygen ambient at 520 °C for 1 h exhibited only the tetragonal rutile phase. The average optical transmittance of as-prepared thin film samples was higher than 87.0% in the visible light region; the optical band gap energy slightly decreased from 3.92 eV to 3.83 eV with increases in Ga doping content. Hall effect measurement showed that the nature of conductivity of SnO{sub 2}:Ga thin films changed from n-type to p-type when the Ga doping level was 10%, and when it was at 15%, Ga-doped SnO{sub 2} thin films exhibited the highest mean hole concentration of 1.70 × 10{sup 18} cm{sup -3}. Furthermore, a transparent p-SnO{sub 2}:Ga (Ga doping level of 15%)/n-ZnO:Al (Al doping level of 2%) heterojunction was fabricated on alkali-free glass. The I-V curve measurement for the p-n heterojunction diode showed a typical rectifying characteristic with a forward turn-on voltage of 0.65 V.

  7. In situ fabricated platinum—poly(vinyl alcohol) nanocomposite thin film: a highly reusable ‘dip catalyst’ for hydrogenation

    Science.gov (United States)

    Divya Madhuri, U.; Kesava Rao, V.; Hariprasad, E.; Radhakrishnan, T. P.

    2016-04-01

    A simple protocol for the in situ generation of platinum nanoparticles in a poly(vinyl alcohol) (PVA) thin film is developed. Chloroplatinic acid as well as potassium platinum(II) chloride are used as precursors and the film is fabricated by spin coating followed by mild thermal annealing. The chemical process occurring inside the film, wherein the polymer itself acts as the reducing agent, is explored through different spectroscopy and microscopy techniques. The Pt-PVA film, <100 nm thick and containing ˜1 nm size Pt nanoparticles, is shown to be a highly efficient catalyst for the reduction of methylene blue using sodium borohydride. The ease of retrieval and reuse of the thin film is highlighted by the term ‘dip catalyst’. The reaction yield, kinetics and rate are reproducible through several reuses of the same catalyst film. Turnover number (TON = number of mols of product/number of mols of catalyst) and turnover frequency (TOF = TON/reaction time) are significantly higher than those reported earlier for this reaction using metal nanocatalysts. Utility of Pt-PVA film as an efficient catalyst for other hydrogenation reactions is demonstrated.

  8. Fabrication and characterization of Sb-doped Sn02 thin films derived from methacrylic acid modified tin(IV)alkoxides

    Science.gov (United States)

    Kololuoma, Terho K.; Tolonen, Ari; Johansson, Leena-Sisko; Campbell, Joseph M.; Karkkainen, Ari H. O.; Hiltunen, Marianne; Haatainen, Tomi; Rantala, Juha T.

    2002-10-01

    We report on the fabrication of transparent, conductive and directly photopatternable, pure and Sb-doped tin dioxide thin films. Precursors used were antimony(III)isopropoxide and a photo-reactive tin alkoxide synthesized from tin(IV)isopropoxide and methacrylic acid. The synthesis of methacrylic acid modified tin alkoxide was monitored in-situ using IR- and ESI-TOF mass spectroscopic techniques. Sb-doped organo-tin films were deposited via single layer spin coating. After deposition the films were patterned via photopolymerization, using a mercury I-line UV-lamp. All investigated materials could be patterned with 3 μm features. After development in isopropanol, the films were annealed in air, in order to obtain crystalline and conductive films. The electrical conductivities of the annealed thin films with, and without, UV-irradiation were determined using a linear four-point method. The direct photopatterning process was found to increase the film conductivity for all the Sb-doping levels tested. The mechanisms for the increased conductivity were characterized using AFM, XPS and XRD techniques.

  9. Ferroelectric BaTiO3 thin films on Ti substrate fabricated using pulsed-laser deposition.

    Science.gov (United States)

    He, J; Jiang, J C; Liu, J; Collins, G; Chen, C L; Lin, B; Giurgiutiu, V; Guo, R Y; Bhalla, A; Meletis, E I

    2010-09-01

    We report on the fabrication of ferroelectric BaTiO3 thin films on titanium substrates using pulsed laser deposition and their microstructures and properties. Electron microscopy studies reveal that BaTiO3 films are composed of crystalline assemblage of nanopillars with average cross sections from 100 nm to 200 nm. The BaTiO3 films have good interface structures and strong adhesion with respect to Ti substrates by forming a rutile TiO2 intermediate layer with a gradient microstructure. The room temperature ferroelectric polarization measurements show that the as-deposited BTO films possess nearly the same spontaneous polarization as the bulk BTO ceramics indicating formation of ferroelectric domains in the films. Successful fabrication of such ferroelectric films on Ti has significant importance for the development of new applications such as structural health monitoring spanning from aerospace to civil infrastructure. The work can be extended to integrate other ferroelectric oxide films with various promising properties to monitor the structural health of materials.

  10. NiTi thin films on a flexible substrate: Fabrication & Characterization

    NARCIS (Netherlands)

    Kotnur, V.G.

    2015-01-01

    NiTi (Nickel Titanium) is a shape memory alloy (SMA) known for shape memory effect and superelasticity. The shape memory effect and superelasticity allows NiTi to be strained reversibly unto 6-8%. NiTi thin films are of technological interest as actuator materials in microelectromechanical systems

  11. Scalable fabrication of multifunctional freestanding carbon nanotube/polymer composite thin films for energy conversion.

    Science.gov (United States)

    Li, Xiaokai; Gittleson, Forrest; Carmo, Marcelo; Sekol, Ryan C; Taylor, André D

    2012-02-28

    Translating the unique properties of individual single-walled carbon nanotubes (SWNTs) to the macroscale while simultaneously incorporating additional functionalities into composites has been stymied by inadequate assembly methods. Here we describe a technique for developing multifunctional SWNT/polymer composite thin films that provides a fundamental engineering basis to bridge the gap between their nano- and macroscale properties. Selected polymers are infiltrated into a Mayer rod coated conductive SWNT network to fabricate solar cell transparent conductive electrodes (TCEs), fuel cell membrane electrode assemblies (MEAs), and lithium ion battery electrodes. Our TCEs have an outstanding optoelectronic figure of merit σ(dc)/σ(ac) of 19.4 and roughness of 3.8 nm yet are also mechanically robust enough to withstand delamination, a step toward scratch resistance necessary for flexible electronics. Our MEAs show platinum utilization as high as 1550 mW/mg(Pt), demonstrating our technique's ability to integrate ionic conductivity of the polymer with electrical conductivity of the SWNTs at the Pt surface. Our battery anodes, which show reversible capacity of ∼850 mAh/g after 15 cycles, demonstrate the integration of electrode and separator to simplify device architecture and decrease overall weight. Each of these applications demonstrates our technique's ability to maintain the conductivity of SWNT networks and their dispersion within a polymer matrix while concurrently optimizing key complementary properties of the composite. Here, we lay the foundation for the assembly of nanotubes and nanostructured components (rods, wires, particles, etc.) into macroscopic multifunctional materials using a low-cost and scalable solution-based processing technique.

  12. Fabrication of monometallic (Co, Pd, Pt, Au) and bimetallic (Pt/Au, Au/Pt) thin films with hierarchical architectures as electrocatalysts

    Science.gov (United States)

    Qiu, Cuicui; Zhang, Jintao; Ma, Houyi

    2010-05-01

    Co thin films with novel hierarchical structures were controllably fabricated by simple electrochemical deposition in the absence of hard and soft templates, which were used as sacrificial templates to further prepare noble metal (Pd, Pt, Au) hierarchical micro/nanostructures via metal exchange reactions. SEM characterization demonstrated that the resulting noble metal thin films displayed hierarchical architectures. The as-prepared noble metal thin films could be directly used as the anode catalysts for the electro-oxidation of formic acid. Moreover, bimetallic catalysts (Pt/Au, Au/Pt) fabricated based on the monometallic Au, Pt micro/nanostructures exhibited the higher catalytic activity compared to the previous monometallic catalysts.

  13. LiCoO{sub 2} thin film cathode fabrication by rapid thermal annealing for micro power sources

    Energy Technology Data Exchange (ETDEWEB)

    Park, Ho Young; Nam, Sang Cheol; Lim, Young Chang; Choi, Kyu Gil; Lee, Ki Chang; Park, Gi Back; Kim, Jae Bum [Microcell Center, Nuricell Inc., Seoul 131-863 (Korea, Republic of); Kim, Heesook Park [College of General Education, Kookmin University, Seoul 136-702 (Korea, Republic of); Cho, Sung Baek [Advanced Technology Research Center, Agency for Defense Development, Daejeon 305-600 (Korea, Republic of)

    2007-01-01

    The rapid thermal annealing (RTA) process was employed to obtain crystalline LiCoO{sub 2} thin films. XRD analyses of the LiCoO{sub 2} thin film show increased crystallinity with an increase in the RTA time. The Auger electron spectroscopic analysis of the LiCoO{sub 2} film strongly suggests that the RTA process is more advantageous to obtain a stable inter layer between the substrate and the deposited film and between each deposited layer than the conventional annealing process. All-solid-state thin film cells composed of Li/lithium phosphorous oxynitride (Lipon)/LiCoO{sub 2} systems were fabricated using the LiCoO{sub 2} cathode treated with RTA. The optimum condition of RTA would be 900s at 650{sup o}C, which exhibited a good rate capability for high power applications. Two cells were connected in parallel to obtain a higher discharge current, and they showed a specific capacity of 38.4{mu}Ahcm{sup -2}{mu}m{sup -1} even at a 25C rate (current density: 7.96mAcm{sup -2}). (author)

  14. Structural and magnetic properties of FeNi thin films fabricated on amorphous substrates

    Energy Technology Data Exchange (ETDEWEB)

    Tashiro, T. Y.; Mizuguchi, M., E-mail: mizuguchi@imr.tohoku.ac.jp; Kojima, T.; Takanashi, K. [Institute for Materials Research, Tohoku University, Aoba-ku, Sendai 980-8577 (Japan); Koganezawa, T.; Kotsugi, M.; Ohtsuki, T. [Japan Synchrotron Radiation Research Institute (JASRI/SPring-8), Sayo, Hyogo 679-5198 (Japan)

    2015-05-07

    FeNi films were fabricated by sputtering and rapid thermal annealing on thermally amorphous substrates to realize the formation of an L1{sub 0}-FeNi phase by a simple method. Structural and magnetic properties of FeNi films were investigated by varying the annealing temperature. L1{sub 0}-FeNi superlattice peaks were not observed in X-ray diffraction patterns, indicating no formation of L1{sub 0}-ordered phase, however, the surface structure systematically changed with the annealing temperature. Magnetization curves also revealed a drastic change depending on the annealing temperature, which indicates the close relation between the morphology and magnetic properties of FeNi films fabricated on amorphous substrates.

  15. Preparation and Characterization of Cu2ZnSnS4 Thin Films and Solar Cells Fabricated from Quaternary Cu-Zn-Sn-S Target

    OpenAIRE

    2013-01-01

    CZTS thin films were fabricated through sputtering from a quaternary Cu-Zn-Sn-S target, followed by a sulfurization process. CZTS thin-film solar cells were also fabricated and a highest efficiency of 4.04% was achieved. It has been found that obvious Zn loss occurs during the sputtering and poorly crystallized CZTS are formed in the sputtered films. The Zn loss leads to the appearance of SnS. A sulfurization process can obviously improve the crystallinity of CZTS and films with grain size of...

  16. Fabrication and its characteristics of low-temperature polycrystalline silicon thin films

    Institute of Scientific and Technical Information of China (English)

    LASSAUT; J

    2009-01-01

    In order to reduce the cost of solar cells or flat-panel display, it is very important to synthesis poly-crystalline silicon films on low cost substrate such as glass at low temperature. In this work, electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (PECVD) system was successfully applied to synthesize poly-Si thin-film on common glass substrate using H2 as the plasma source and SiH4 (Ar:SiH4=19:1) as the precursor gas at low temperature. Since the multicusp cav- ity-coupling ECR plasma source was adopted to provide active precursors, the growth temperature decreased to lower than 200℃. In the plasma, the electron temperatures kTe are ~2―3 eV and the ion temperatures kTi≤1 eV. This leads to non-remarkable ion impacts during the film deposition. The characteristic of poly-Si films was investigated. It was shown that the crystalline fraction Xc of the films can be up to 90% even deposit at room temperature, and the film was (220) preferably oriented. The growth behaviors of the film between the interface of glass and Si films were also discussed in detail.

  17. Fabrication and its characteristics of low-temperature polycrystalline silicon thin films

    Institute of Scientific and Technical Information of China (English)

    WU AiMin; DENG WanTing; QIN FuWen; LI BoHai; LASSAUT J; JIANG Xin; DONG Chuang

    2009-01-01

    In order to reduce the cost of solar cells or flat-panel display, it is very important to synthesis poly-crystalline silicon films on low cost substrate such as glass at low temperature. In this work, electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (PECVD) system was suc-cessfully applied to synthesize poly-Si thin-film on common glass substrate using H2 as the plasma source and SiH4 (Ar'SiH4=19:1) as the precursor gas at low temperature. Since the multicusp cav-ity-coupling ECR plasma source was adopted to provide active precursors, the growth temperature decreased to lower than 200℃. In the plasma, the electron temperatures kTe are -2--3 eV and the ion temperatures kTi≤1 eV. This leads to non-remarkable ion impacts during the film deposition. The characteristic of poly-Si films was investigated. It was shown that the crystalline fraction Xc of the films can be up to 90% even deposit at room temperature, and the film was (220) preferably oriented. The growth behaviors of the film between the interface of glass and Si films were also discussed in detail.

  18. An Observation of Diamond-Shaped Particle Structure in a Soya Phosphatidylcohline and Bacteriorhodopsin Composite Langmuir Blodgett Film Fabricated by Multilayer Molecular Thin Film Method

    Science.gov (United States)

    Tsujiuchi, Y.; Makino, Y.

    A composite film of soya phosphatidylcohline (soya PC) and bacteriorhodopsin (BR) was fabricated by the multilayer molecular thin film method using fatty acid and lipid on a quartz substrate. Direct Force Microscopy (DFM), UV absorption spectra and IR absorption spectra of the film were characterized on the detail of surface structure of the film. The DFM data revealed that many rhombus (diamond-shaped) particles were observed in the film. The spectroscopic data exhibited the yield of M-intermediate of BR in the film. On our modelling of molecular configuration indicate that the coexistence of the strong inter-molecular interaction and the strong inter-molecular interaction between BR trimmers attributed to form the particles.

  19. Fabrication and properties of nanocrystalline zinc oxide thin film prepared by sol-gel method

    Directory of Open Access Journals (Sweden)

    Sumetha Suwanboon

    2008-01-01

    Full Text Available Zinc oxide (ZnO thin films were prepared on glass substrate by sol-gel dip-coating method. The structural properties were investigated by x-ray diffraction (XRD method and atomic force microscope (AFM. The optical properties were measured by UV-Vis spectrophotometer. The XRD patterns showed that the films formed preferred orientation along c-axis which increased as a function of polyvinyl pyrrolidone (PVP concentration. The films gave the crystallite size of 15-18 nm calculated by Scherrer’s formula and grain size of 48-70 nm measured by AFM at different PVP concentrations. The direct optical band gap of the films was in the range of 3.80-4.08 eV.

  20. Fabrication and evaluation of CdS/PbS thin film solar cell by chemical bath deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Saikia, Dulen, E-mail: dulen.s@rediffmail.com; Phukan, Pallabi

    2014-07-01

    A solar cell with the structure glass/SnO{sub 2}/CdS/PbS/HgTe has been fabricated where both window (CdS) and absorber (PbS) layers were deposited by a chemical bath deposition technique which is completely free from any complexing agents. The films were prepared by in-situ thermolysis of precursors confined in polyvinyl alcohol matrix (PVA). As the method is free of any complexing agent, hence no need to control the pH of the solution. The as-prepared films were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy and UV–Vis absorption spectroscopy. The surface morphology clearly shows that as synthesized CdS/PVA and PbS/PVA thin films were nanostructured, almost homogeneous, without any pinholes or cracks and covered the substrate well. The photovoltaic parameters of the cell were measured with the Keithley 2400 source meter under one sun illumination and efficiency of the cell was found to be 1.668%. - Highlights: • Polyvinyl alcohol matrix-capped PbS thin film from a complexing agent free system • Fabrication of CdS/PbS solar cell based on chemical bath deposition technique • An efficiency of 1.668% is achieved under one SUN illumination.

  1. Fabrication of L1{sub 0}-MnAl perpendicularly magnetized thin films for perpendicular magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Hosoda, Masaki; Oogane, Mikihiko; Kubota, Miho; Saruyama, Haruaki; Iihama, Satoshi; Naganuma, Hiroshi; Ando, Yasuo [Department of Applied Physics, Graduate school of Engineering, Tohoku University, Aza-aoba 6-6-05, Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Kubota, Takahide [WPI Advanced Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan)

    2012-04-01

    Structural and magnetic properties of MnAl thin films with different composition, growth temperature, and post-annealing temperature were investigated. The optimum condition for fabrication of L1{sub 0}-MnAl perpendicularly magnetized thin film deposited on Cr-buffered MgO single crystal substrate was revealed. The results of x ray diffraction indicated that the MnAl films annealed at proper temperature had a (001)-orientation and L1{sub 0}-ordered structure. The L1{sub 0}-ordered films were perpendicularly magnetized and had a large perpendicular anisotropy. In addition, low surface roughness was achieved. For the optimized fabrication condition, the saturation magnetization M{sub s} of 600 emu/cm{sup 3} and perpendicular magnetic anisotropy K{sub u} of 1.0 x 10{sup 7} erg/cm{sup 3} was obtained using the Mn{sub 48}Al{sub 52} target at deposition temperature of 200 deg. C and post-annealing temperature of 450 deg. C.

  2. Fabrication of EuTiO3 Epitaxial Thin Films by Pulsed Laser Deposition

    Science.gov (United States)

    Hatabayashi, Kunitada; Hitosugi, Taro; Hirose, Yasushi; Cheng, Xianqiang; Shimada, Toshihiro; Hasegawa, Tetsuya

    2009-10-01

    We have fabricated high-quality epitaxial EuTiO3(100) films on SrTiO3 substrates by pulsed laser deposition. In situ reflection high-energy electron diffraction (RHEED) monitoring revealed clear intensity oscillation, indicating layer-by-layer growth of EuTiO3. Furthermore, the obtained films had atomically flat surfaces with a step-terrace structure. From magnetization vs temperature measurements, we confirmed that the EuTiO3 films have antiferromagnetic ordering with a Néel temperature of 3.7 K, and that they could be transformed to a ferromagnetic state by applying a magnetic field. We also found that the magnetic properties of the EuTiO3 films are sensitive to cell volume, as predicted by recent first-principles band calculations.

  3. Top gate ZnO-Al2O3 thin film transistors fabricated using a chemical bath deposition technique

    Science.gov (United States)

    Gogoi, Paragjyoti; Saikia, Rajib; Changmai, Sanjib

    2015-04-01

    ZnO thin films were prepared by a simple chemical bath deposition technique using an inorganic solution mixture of ZnCl2 and NH3 on glass substrates and then were used as the active material in thin film transistors (TFTs). The TFTs were fabricated in a top gate coplanar electrode structure with high-k Al2O3 as the gate insulator and Al as the source, drain and gate electrodes. The TFTs were annealed in air at 500 °C for 1 h. The TFTs with a 50 μm channel length exhibited a high field-effect mobility of 0.45 cm2/(V·s) and a low threshold voltage of 1.8 V. The sub-threshold swing and drain current ON-OFF ratio were found to be 0.6 V/dec and 106, respectively.

  4. Microbial colonization of biopolymeric thin films containing natural compounds and antibiotics fabricated by MAPLE

    Energy Technology Data Exchange (ETDEWEB)

    Cristescu, R., E-mail: rodica.cristescu@inflpr.ro [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, PO Box MG-36, Bucharest-Magurele (Romania); Surdu, A.V.; Grumezescu, A.M.; Oprea, A.E.; Trusca, R.; Vasile, O. [Faculty of Applied Chemistry and Materials Science, Department of Science and Engineering of Oxide Materials and Nanomaterials, Politehnica University of Bucharest, Polizu Street No. 1–7, 011061 Bucharest (Romania); Dorcioman, G.; Visan, A.; Socol, G.; Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, PO Box MG-36, Bucharest-Magurele (Romania); Mihaiescu, D. [Faculty of Applied Chemistry and Materials Science, Department of Organic Chemistry, Politehnica University of Bucharest, 1–7 Polizu Street, 011061 Bucharest (Romania); Enculescu, M. [National Institute of Materials Physics, PO Box MG-7, Bucharest-Magurele (Romania); Chifiriuc, M.C. [Microbiology Immunology Department, Faculty of Biology, Research Institute of the University of Bucharest—ICUB, Research Institute of the University of Bucharest, 77206 Bucharest (Romania); Boehm, R.D.; Narayan, R.J. [Biomedical Engineering, University of North Carolina, Chapel Hill, NC (United States); Chrisey, D.B. [Department of Physics and Engineering Physics, Tulane University, New Orleans, LA (United States)

    2015-05-01

    Highlights: • We deposited thin composite quercetin/polyvinylpyrrolidone/antibiotic films with close resemblance to the starting/drop-cast composition by MAPLE. • Quercetin flavonoid shows an anti-biofilm activity comparable to that of the tested large-spectrum antibiotics (norfloxacin or cefuroxime), especially in case of 72 h biofilms. • These results could account for the possible use of quercetin as an alternative to antibiotics to combat the mature biofilms developed on different substrates. • MAPLE may be used to produce implantable medical devices that provide a relatively long term in vitro stability and resistance to the growth of microorganisms. - Abstract: Although a great number of antibiotics are currently available, they are often rendered ineffective by the ability of microbial strains to develop genetic resistance and to grow in biofilms. Since many antimicrobial agents poorly penetrate biofilms, biofilm-associated infections often require high concentrations of antimicrobial agents for effective treatment. Among the various strategies that may be used to inhibit microbial biofilms, one strategy that has generated significant interest involves the use of bioactive surfaces that are resistant to microbial colonization. In this respect, we used matrix assisted pulsed laser evaporation (MAPLE) involving a pulsed KrF* excimer laser source (λ = 248 nm, τ = 25 ns, ν = 10 Hz) to obtain thin composite biopolymeric films containing natural (flavonoid) or synthetic (antibiotic) compounds as bioactive substances. Chemical composition and film structures were investigated by Fourier transform infrared spectroscopy and X-ray diffraction. Films morphology was studied by scanning electron microscopy and transmission electron microscopy. The antimicrobial assay of the microbial biofilms formed on these films was assessed by the viable cell counts method. The flavonoid-containing thin films showed increased resistance to microbial colonization

  5. Fabrication and properties of zinc oxide thin film prepared by sol-gel dip coating method

    Directory of Open Access Journals (Sweden)

    Kayani Zohra Nazir

    2015-09-01

    Full Text Available ZnO thin films were deposited on a glass substrate by dip coating technique using a solution of zinc acetate, ethanol and distilled water. Optical constants, such as refractive index n and extinction coefficient k. were determined from transmittance spectrum in the ultraviolet-visible-near infrared (UV-Vis-NIR regions using envelope methods. The films were found to exhibit high transmittance, low absorbance and low reflectance in the visible regions. Absorption coefficient α and the thickness of the film t were calculated from interference of transmittance spectra. The direct optical band gap of the films was in the range of 3.98 to 3.54 eV and the thickness of the films was evaluated in the range of 173 to 323 nm, while the refractive index slightly varied in the range of 1.515 to 1.622 with an increase in withdrawal speed from 100 to 250 mm/s. The crystallographic structure of the films was analyzed with X-ray diffractometer. The films were amorphous in nature.

  6. Protection effect of ZrO2 coating layer on LiCoO2 thin film fabricated by DC magnetron sputtering.

    Science.gov (United States)

    Noh, Jung-Pil; Jung, Ki-Taek; Jang, Min-Sun; Kwon, Tae-Hoon; Cho, Gyu-Bong; Kim, Ki-Won; Nam, Tae-Hyun

    2013-10-01

    Bare and ZrO2-coated LiCoO2 thin films were fabricated by direct current magnetron sputtering method on STS304 substrates. Deposited both films have a well-crystallized structure with (003) preferred orientation after annealing at 600 degrees C. The ZrO2-coated LiCoO2 thin film provide significantly improved cycling stability compared to bare LiCoO2 thin film at high cut-off potential (3.0-4.5 V). The improvement in electrochemical stability is attributed to the structural stability by ZrO2 coating layer.

  7. Dye-sensitized solid-state solar cells fabricated by screen-printed TiO2 thin film with addition of polystyrene balls

    Institute of Scientific and Technical Information of China (English)

    Jing Han; Jin Mao Chen; Xiao Wen Zhou; Yuan Lin; Jing Bo Zhang; Jian Guang Jia

    2008-01-01

    The screen-printed nanoporous TiO2 thin film was employed to fabricate dye-sensitized solid-state solar cells using CuI as hole-transport materials. The solar cell based on nanoporous TiO2 thin film with large pores formed by the addition of polystyrene balls with diameter of 200 nm to the TiO2 paste exhibits photovoltaic performance enhancement, which is attributed to the good contact of CuI with surface of dye-sensitized thin film due to easy penetration of CuI in the film withlarge pores.

  8. Photocatalytic Activity of Vis-Responsive Ag-Nanoparticles/TiO2 Composite Thin Films Fabricated by Molecular Precursor Method (MPM

    Directory of Open Access Journals (Sweden)

    Mitsunobu Sato

    2013-07-01

    Full Text Available The Ag-nanoparticles (Ag-NP/TiO2 composite thin films with various amounts of Ag (10 mol% ≤ n ≤ 80 mol% were examined as a potential photocatalyst by decoloration reaction of methylene blue (MB in an aqueous solution. These composite thin films of ca. 100 nm thickness were fabricated by the MPM at 600 °C in air. The decoloration rates monitored by the absorption intensity of the MB solution indicated that the composite thin films of Ag with an amount less than 40 mol% are not effective under vis-irradiation, though they can work as a photocatalyst under UV-irradiation. Further, the UV-sensitivity of the composite thin films gradually decreased to almost half the level of that of the TiO2 thin film fabricated under the identical conditions when the Ag amount increased from 10 to 40 mol%. Contrarily, the composite thin films of Ag content larger than 50 mol% showed the vis-responsive activity, whose level was slightly lower than the decreased UV-sensitivity. Diffuse reflectance spectra suggested that the vis-responsive activity of the composite thin films is due to the conductivity, localized surface plasmon resonance and surface plasmon resonance of Ag-NP. It was also elucidated that the vis-responsive level of the composite thin films corresponds to their electrical conductivity that depends on the Ag content.

  9. FABRICATION AND CHARACTERIZATION OF ORGANIC THIN FILMS WITH NANO—STRUCTURE

    Institute of Scientific and Technical Information of China (English)

    TakashiH,Noritaka; ChenGuorong; 等

    2002-01-01

    A novel method of thin film formation of organic materials with nano-strucure has been successfully developed by using vacuum technique is proposed. The diarylethene(C18H18N2S2)was selected as a model compound for the evaluation of this method.Polymer,we found that the tendency of dye dispersion into the polymer is as follows:PC>PBzMA>PMMA>PHPMA,where no dispersion is observed for PHPMA under the condition of 115℃ for 24 hours ,Thin film of polymer alloy composed of PMMA and polystylene(PS) was loaded into a glass ample with diarylethene,and treated for three days at 100℃,Dispersed state of the dye was evaluated by transmission electron microscope,and concluded that the dye is distributed only in PS domains selectively.Photochromic properties of the PS domain will be evaluated by using a scanning nearfield optical microscope.

  10. A novel in-situ technique to fabricate thin films with controlled lateral thickness modulations

    Science.gov (United States)

    Zhang, Chi

    Surfaces having well-defined morphologies like periodic arrays of dots or lines, promise useful applications. Magnetic nanodots of Co and Fe-alloys are useful in patterned magnetic recording media. Well controlled grain size and surface area of nanostructured TiO2 are useful to develop efficient photocatalysts. However, there is a continuing need to develop techniques to make such surfaces in a simple and economical manner. In this thesis, a previously unexplored in-situ approach to assemble lateral patterns in thin films was proposed and investigated. Simple models of film growth on a defect free surface show that under uniform areal deposition rates and surface temperatures, nucleation occurs at random positions on the surface. We proposed that by exposing a growing thin film to a spatially varying surface temperature distribution, nucleation and growth can be confined to specific spatial locations. Consequently, a film with a desired pattern or thickness modulation could be achieved. The experimental approach consists of irradiating the substrate surface with a laser interference pattern simultaneous with physical vapor deposition (PVD). To perform such film growth experiments, a vibration minimized and multifunctional ultra-high vacuum chamber was integrated with a Nd:YAG laser. The laser output is a beam of 266 nm with a coherence length of approximately 2 m and an area of ˜0.8 x 0.8 cm2. The laser has a pulse width of 9 ns, a constant repetition rate of 50 Hz, with a rated peak output of 44 mJ/pulse. The typical laser energy density used in this work was about 10 mJ/cm2. Since sub-micron length scales were of interest, vibration studies were performed by recording the interference patterns on kapton films. Results from the kapton films, measurements using a shear accelerometer and recent growth results showed that peak-to-peak vibration amplitudes on the substrate surface were less than +/-25 nm. Well-established PVD techniques like pulsed laser deposition

  11. In situ spectroelectrochemical behaviour of nanocrystalline TiO2 thin films electrode fabricated by pulsed laser deposition

    Institute of Scientific and Technical Information of China (English)

    傅正文; 孔继烈; 秦启宗; 田中群

    1999-01-01

    Nanocrystalline titanium oxide thin films have been successfully deposited on ITO coated glass by pulsed laser ablation of metallic Ti target in O3/O2 ambient gases. The intercalation of Li ions in the anatase TiO2 film electrode is examined by cyclic vohammetry. The electrochromic behaviour of TiO2 electrode is investigated by in-situ visible transmittance measurement, and two absorption bands at 420 and 650 nm are observed. The absorption falling and rising in color changing with excellent revisibility is relative to the insertion and deintercalation processes of Li ion. These resuits suggest that nanocrystalline titanium oxide films fabricated by pulsed laser deposition exhibit excellent spectroelectrochemical property.

  12. Heat-treatment controlled structural and optical properties of sol-gel fabricated Eu:ZnO thin films

    Science.gov (United States)

    Ghosh, Subhabrata; Uma Mahendra Kumar, K.; Bhaktha, B. N. Shivakiran

    2017-02-01

    We report on the fabrication of sol-gel derived Eu-doped ZnO films and the effects of heat-treatment on their structural and optical properties. X-ray diffraction data analysis confirms the decrease in strain in the thin films with increasing heat-treatment temperatures, and the compressive stress of the samples is found to become tensile for heat-treatments between 650 °C and 800 °C. X-ray-absorption fine-structure spectra performed at the Eu L3-edge confirm the absence of clustering of Eu-ions. The photoluminescence (PL) spectra of undoped and doped films consist of near-band edge emissions along with the defect state emissions of ZnO. Intense red emission (612 nm) is observed under UV excitation attributed to the 5D0 →7F2 energy level transition of Eu3+ ions in the doped films. The elemental composition and the existence of Eu2+ as well as Eu3+ has been discussed with the help of X-ray photoelectron spectroscopy. ZnO → Eu3+ energy transfer has also been confirmed with the help of PL excitation spectra in these transparent ZnO thin films for applications in integrated optic devices operating in the UV-visible region.

  13. Effect of Annealing On Thin Film Fabrication of Cadmium Zinc Telluride by Single-R.F. Magnetron Sputtering Unit

    Directory of Open Access Journals (Sweden)

    Dr. Monisha Chakraborty A,

    2014-01-01

    Full Text Available In this work, formation of Cd1-xZnxTe thin films under various annealing-environments, created by layer by layer deposition of individual CdTe and ZnTe targets from a Single-R.F. Magnetron Sputtering unit is investigated. Structural and optical characterization results show that Vacuum Annealing is the best suitable for the formation of better Cd1-xZnxTe XRD peaks of higher intensities in comparison to Argon or Nitrogen-Annealing, for a bi-layered deposited CdTe and ZnTe film on glass substrate. The crystallography of the Cd1-xZnxTe films formed appeared to be either Cubic or Rhombohedral type. Also, it has been noticed, that the more inert the annealing-environment is, the lesser is the heat loss by the film-substrate and this results in better fusing of the deposited particles to move more from the poly-crystalline to the mono-crystalline structure. Also higher inert environment causes more Cadmium evaporation and this consequently drives the lattice-constant and the band-gap energy of the formed Cd1-xZnxTe thin film to move from the CdTe side to the ZnTe side. The method developed here with proper annealing ambiance for Cd1-xZnxTe fabrication can be implemented in laboratories lacking in Co-Sputtering machine.

  14. Fabrication of ionic liquid electrodeposited Cu--Sn--Zn--S--Se thin films and method of making

    Science.gov (United States)

    Bhattacharya, Raghu Nath

    2016-01-12

    A semiconductor thin-film and method for producing a semiconductor thin-films comprising a metallic salt, an ionic compound in a non-aqueous solution mixed with a solvent and processing the stacked layer in chalcogen that results in a CZTS/CZTSS thin films that may be deposited on a substrate is disclosed.

  15. Room-temperature fabrication of a Ga-Sn-O thin-film transistor

    Science.gov (United States)

    Matsuda, Tokiyoshi; Takagi, Ryo; Umeda, Kenta; Kimura, Mutsumi

    2017-08-01

    We have succeeded in forming a Ga-Sn-O (GTO) film for a thin-film transistor (TFT) using radio-frequency (RF) magnetron sputtering at room temperature without annealing process. It is achieved that the field-effect mobility is 0.83 cm2 V-1 s-1 and the on/off ratio is roughly 106. A critical process parameter is the deposition pressure during the RF magnetron sputtering, which determines a balance between competing mechanisms of sputtering damages and chemical reactions, because the film quality has to be enhanced solely during the sputtering deposition. This result suggests a possibility of rare-metal free amorphous metal-oxide semiconductors.

  16. Silicon template preparation for the fabrication of thin patterned gold films via template stripping

    Science.gov (United States)

    Schmidl, G.; Dellith, J.; Dellith, A.; Teller, N.; Zopf, D.; Li, G.; Dathe, A.; Mayer, G.; Hübner, U.; Zeisberger, M.; Stranik, O.; Fritzsche, W.

    2015-12-01

    Metallic nanostructures play an important role in the vast field of modern nanophotonics, which ranges from the life sciences to biomedicine and beyond. Gold is a commonly-used and attractive material for plasmonics in the visible wavelength range, most importantly due to its chemical stability. In the present work, we focused on the different methods of plasmonic nanostructure fabrication that possess the greatest potential for cost-efficient fabrication. Initially, reusable (1 0 0) silicon templates were prepared. For this purpose, three different lithography methods (i.e. e-beam, optical, and nanoparticle lithography) were used that correspond to the desired structural scales. The application of a subsequent anisotropic crystal orientation-dependent wet etching process produced well-defined pyramidal structures in a wide variety of sizes, ranging from several microns to less than 100 nm. Finally, a 200 nm-thick gold layer was deposited by means of confocal sputtering on the silicon templates and stripped in order to obtain gold films that feature a surface replica of the initial template structure. The surface roughness that was achieved on the stripped films corresponds well with the roughness of the template used. This makes it possible to prepare cost-efficient high-quality structured films in large quantities with little effort. The gold films produced were thoroughly characterized, particularly with respect to their plasmonic response.

  17. Performance Investigation of Multilayer MoS2 Thin-Film Transistors Fabricated via Mask-free Optically Induced Electrodeposition.

    Science.gov (United States)

    Li, Meng; Liu, Na; Li, Pan; Shi, Jialin; Li, Guangyong; Xi, Ning; Wang, Yuechao; Liu, Lianqing

    2017-03-08

    Transition metal dichalcogenides, particularly MoS2, have recently received enormous interest in explorations of the physics and technology of nanodevice applications because of their excellent optical and electronic properties. Although monolayer MoS2 has been extensively investigated for various possible applications, its difficulty of fabrication renders it less appealing than multilayer MoS2. Moreover, multilayer MoS2, with its inherent high electronic/photonic state densities, has higher output driving capabilities and can better satisfy the ever-increasing demand for versatile devices. Here, we present multilayer MoS2 back-gate thin-film transistors (TFTs) that can achieve a relatively low subthreshold swing of 0.75 V/decade and a high mobility of 41 cm(2)·V(-1)·s(-1), which exceeds the typical mobility value of state-of-the-art amorphous silicon-based TFTs by a factor of 80. Ag and Au electrode-based MoS2 TFTs were fabricated by a convenient and rapid process. Then we performed a detailed analysis of the impacts of metal contacts and MoS2 film thickness on electronic performance. Our findings show that smoother metal contacts exhibit better electronic characteristics and that MoS2 film thickness should be controlled within a reasonable range of 30-40 nm to obtain the best mobility values, thereby providing valuable insights regarding performance enhancement for MoS2 TFTs. Additionally, to overcome the limitations of the conventional fabrication method, we employed a novel approach known as optically induced electrodeposition (OIE), which allows the flexible and precise patterning of metal films and enables rapid and mask-free device fabrication, for TFT fabrication.

  18. Thin Films

    Directory of Open Access Journals (Sweden)

    M. Benmouss

    2003-01-01

    the optical absorption are consistent with the film color changes. Finally, the optical and electrochromic properties of the films prepared by this method are compared with those of our sputtered films already studied and with other works.

  19. Ionic properties of ultrathin yttria-stabilized zirconia thin films fabricated by atomic layer deposition with water, oxygen, and ozone

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ho Keun; Jang, Dong Young; Kim, Jun Woo [School of Mechanical Engineering, Korea University, Anam-Dong, Seongbuk-Gu, Seoul 136-713 (Korea, Republic of); Bae, Kiho [School of Mechanical Engineering, Korea University, Anam-Dong, Seongbuk-Gu, Seoul 136-713 (Korea, Republic of); High-Temperature Energy Materials Research Center, Korea Institute of Science and Technology (KIST), Hawolgok-dong, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Shim, Joon Hyung, E-mail: shimm@korea.ac.kr [School of Mechanical Engineering, Korea University, Anam-Dong, Seongbuk-Gu, Seoul 136-713 (Korea, Republic of)

    2015-08-31

    We compared the ionic properties of yttria-stabilized zirconia (YSZ) thin films prepared by atomic layer deposition (ALD) using various oxidants including water, oxygen, and ozone. Cross-plane conductivity measurements were performed at low temperature (50 °C) and high temperature (450 °C) using AC impedance spectroscopy. As a result, we have confirmed that the conductivity of ALD YSZ films below 300 °C is greater by several orders of magnitude compared to the nano-scale YSZ thin films synthesized by other conventional techniques. Among the ALD YSZ samples, ALD YSZ fabricated using water showed the highest conductivity while ALD YSZ fabricated using ozone showed the lowest. We have analyzed this result in relation with grain morphology characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM), and the chemical binding states measured by X-ray photoelectron spectroscopy (XPS). - Highlights: • YSZ is prepared by atomic layer deposition (ALD) with H{sub 2}O, O{sub 2}, and O{sub 3} as oxidants. • Grain size of ALD YSZ membranes deposited using H{sub 2}O is the smallest. • Conductivity of ALD YSZ made with H{sub 2}O shows the highest value below 300 °C. • Conductivity trends coincide with the hydroxyl group content measured by XPS.

  20. Study on fabrication of TiO{sub 2} thin films by spin – coating and their optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Zharvan, Vicran, E-mail: vicran.zharvan@gmail.com; Daniyati, Risqa; Nur Ichzan, A.S.; Yudoyono, Gatut; Darminto, E-mail: darminto@physics.its.ac.id [Department of Physics, Institut Teknologi Sepuluh Nopember (ITS), Kampus ITS Sukolilo, Surabaya 60111 (Indonesia)

    2016-03-11

    Study on fabrication of TiO{sub 2} thin films and their optical properties in UV-VIS spectrum has been conducted. TiO{sub 2} nanopowders were prepared by co-precipitation method with varying mixing duration for 5, 10 and 25 hours using TiCl{sub 3} as precursor. The as-synthesized TiO{sub 2} phase is anatase having crystalline size of 14.25 nm, 13.75 nm and 12.62, respectively for the corresponding mixing duration. Thin films of TiO{sub 2} were fabricated by spin coating method and then checked by XRD diffractometer and UV-Vis Spectrophotometer to examine their structure and band gap energy. The prepared films also contain anatase phase of TiO{sub 2} with respective band gap of 3.70 eV, 3.74 eV and 3.76 eV, depending on the powders and their treatment.

  1. Photoelectrode thin film of dye-sensitized solar cell fabricated by anodizing method and spin coating and electrochemical impedance properties of DSSC

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Ho, E-mail: f10381@ntut.edu.tw [Graduate Institute of Manufacturing Technology, National Taipei University of Technology, Taipei 10608, Taiwan (China); Chen, Chih-Hao [Department of Thoracic Surgery, Mackay Memorial Hospital, Taipei 10419, Taiwan (China); Graduate Institute of Mechanical and Electrical Engineering, National Taipei University of Technology, Taipei 10608, Taiwan (China); Kao, Mu-Jung [Department of Vehicle Engineering, National Taipei University of Technology, Taipei 10608, Taiwan (China); Chien, Shu-Hua [Institute of Chemistry, Academia Sinica, Taipei 115, Taiwan (China); Chou, Cheng-Yi [Graduate Institute of Manufacturing Technology, National Taipei University of Technology, Taipei 10608, Taiwan (China)

    2013-06-15

    The paper studies the photoelectrode thin film of dye-sensitized solar cell (DSSC) fabricated by anodizing method, explores the structure and properties of the fabricated photoelectrode thin film, measures the photoelectric conversion efficiency of DSSC, and finds the electrochemical impedance properties of DSSCs assembled by photoelectrode thin films in different thicknesses. Besides, in order to increase the specific surface area of nanotubes, this paper deposits TiO{sub 2} nanoparticles (TNP) on the surface of titanium oxide nanotube (TNT). As shown in experimental results, the photoelectric conversion efficiency of the DSSC fabricated by the study rises to 6.5% from the original 5.43% without TnB treatment, with an increase of photoelectric conversion efficiency by 19.7%. In addition, when the photoelectrode thin film is fabricated with mixture of TNTs and TNP in an optimal proportion of 2:8 and the photoelectrode thin film thickness is 15.5 μm, the photoelectric conversion efficiency can reach 7.4%, with an increase of 36.7% from the original photoelectric conversion efficiency at 5.43%. Besides, as found in the results of electrochemical impedance analysis, the DSSC with photoelectrode thin film thickness at 15.5 μm has the lowest charge-conduction resistance (R{sub k}) value 9.276 Ω of recombined electron and conduction resistance (R{sub w}) value 3.25 Ω of electrons in TiO{sub 2}.

  2. Processing and performance of organic insulators as a gate layer in organic thin film transistors fabricated on polyethylene terephthalate substrate

    Indian Academy of Sciences (India)

    Saumen Mandal; Monica Katiyar

    2013-08-01

    Fabrication of organic thin film transistor (OTFT) on flexible substrates is a challenge, because of its low softening temperature, high roughness and flexible nature. Although several organic dielectrics have been used as gate insulator, it is difficult to choose one in absence of a comparative study covering processing of dielectric layer on polyethylene terephthalate (PET), characterization of dielectric property, pentacene film morphology and OTFT characterization. Here, we present the processing and performance of three organic dielectrics, poly(4-vinylphenol) (PVPh), polyvinyl alcohol (PVA) and poly(methylmethacrylate) (PMMA), as a gate layer in pentacene-based organic thin film transistor on PET substrate. We have used thermogravimetric analysis of organic dielectric solution to determine annealing temperature for spin-coated films of these dielectrics. Comparison of the leakage currents for the three dielectrics shows PVA exhibiting lowest leakage (in the voltage range of −30 to +30 V). This is partly because solvent is completely eliminated in the case of PVA as observed by differential thermogravimetric analysis (DTGA). We propose that DTGA can be a useful tool to optimize processing of dielectric layers. From organic thin film transistor point of view, crystal structure, morphology and surface roughness of pentacene film on all the dielectric layers were studied using X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM).We observe pyramidal pentacene on PVPh whereas commonly observed dendritic pentacene on PMMA and PVA surface. Pentacene morphology development is discussed in terms of surface roughness, surface energy and molecular nature of the dielectric layer.

  3. Thin film CdS/CdTe solar cells fabricated by electrodeposition

    Science.gov (United States)

    Kim, D.; Pozder, S.; Qi, B.; Zhu, Y.; Furtak, T. E.; Williamson, D. L.; Trefny, J. U.

    1994-06-01

    CdTe cells with efficiencies up to 9.58% were fabricated by electrodeposition. The minority-carrier lifetime in the CdTe measured by time-resolved photoluminescence was 2.39 ns. A first method to characterize CdS microstructure by small-angle x-ray scattering method has been made. Scanning tunneling microscopy performed on 1000 Å thick CdS films made by chemical bath deposition revealed a thickness fluctuation of 500 Å. Annealing of the CdS films followed by a CdCl2 treatment did not reduce the roughness, but drastically changed the contour of the grains. Some of the CdCl2-treated CdS showed white spots with diameters ranging from about 0.5 mm to 5 mm. These spots are conglomerates of dendritic patterns of either Cd metal or some Cd-rich phase. Optical transmittance of CdS films with various thicknesses (170 Å-2400 Å) showed a good correlation between thickness and transmittance for photon energies above the bandgap. The effect of CdCl2 treatment and annealing on transmittance was either negligible or slightly deleterious. CdTe films made by electrodeposition showed a dense, faceted surface morphology and films were under compressive stress after CdCl2 treatment and annealing.

  4. Design and fabrication of inner-selective thin-film composite (TFC) hollow fiber modules for pressure retarded osmosis (PRO)

    KAUST Repository

    Wan, Chun Feng

    2016-08-03

    Pressure retarded osmosis (PRO) is a promising technology to harvest the renewable osmotic energy from salinity gradients. There are great progresses in the fabrication of PRO membranes in the last decade. Thin-film composite (TFC) hollow fibers have been widely studied and demonstrated superior performance. However, the lack of effective TFC hollow fiber modules hinders the commercialization of the PRO technology. Knowledge and experiences to fabricate TFC hollow fiber modules remain limited in the open literature. In this study, we aim to reveal the engineering and science on how to fabricate TFC hollow fiber modules including the formation of inner-selective polyamide layers and the repair of leakages. TFC-PES hollow fiber modules with 30% and 50% packing densities have been successfully fabricated, showing peak power densities of 20.0 W/m2 and 19.4 W/m2, respectively, at 20 bar using 1 M NaCl solution and DI water as feeds. The modules may be damaged during handling and high pressure testing. The repaired modules have a power density of 18.2 W/m2, 91% of the power densities of the undamaged ones. This study would make up the gap between TFC membrane fabrication and TFC membrane module fabrication in the membrane industry. © 2016 Elsevier B.V.

  5. Fabrication and characterization of ZnO:In thin film as photoanode for DSSC using natural fruit dyes

    Energy Technology Data Exchange (ETDEWEB)

    Mohamad, Ili Salwani; Norizan, Mohd Natashah; Hanifiah, Mohd Khairul Fikri Mohd [School of Microelectronic Engineering, Universiti Malaysia Perlis, Kampus Pauh Putra, 02600 Arau, Perlis (Malaysia); Amin, Intan Azanni Mohd [Department of Eectrical, Electronic and Systems, Faculty of Engineering and Built Environment, National University of Malaysia, 43600 Bangi, Selangor (Malaysia); Shahimin, Mukhzeer Mohamad [Semiconductor Photonics and Integrated Lightwave Systems (SPILS), Tun Abdul Razak Laser Laboratory (TAREL), School of Microelectronic Engineering, Universiti Malaysia Perlis, Kampus Pauh Putra, 02600 Arau, Perlis (Malaysia)

    2015-05-15

    Dye synthesized solar cell (DSSC) is the third generation solar cell and is considered as low cost solar cell as it does not involved neither complicated fabrication process nor expensive materials. DSSC is made of two conductive glasses, photoanode, counter electrode, electrolyte and dye. Previously, majority of the researchers have been using titanium dioxide and ruthenium as the photoanode and dye respectively. This project is carried out to produce a lower cost DSSC by using natural fruit as the dye and exploring the potential of zinc oxide (ZnO) and indium (In) as the photoanode. The morphology of the thin film surfaces were analyzed using scanning electron microscopy which shows that the increment of indium dopant changes the rough surface texture of the thin film and directly reduces the empty spaces between the particles. Theoretically, this structure can help to reduce the light reflection on the solar cell surface. The thin ZnO:In films are immersed in 3 different fruit dyes (plum, apple and orange). The electrical properties of the DSSCs are displayed in the I-V curves and from this research, it shows that the highest efficiency of DSSC is gained from the dopant combination of ZnO{sub 0.8}In{sub 0.2} for all the dyes. The best efficiency of this research is the DSSC using plum dye with 0.34% compared to apple dye and orange dye which give 0.23% and 0.19% respectively.

  6. An economic approach to fabricate photo sensor based on nanostructured ZnO thin films

    Science.gov (United States)

    Huse, Nanasaheb; Upadhye, Deepak; Sharma, Ramphal

    2016-05-01

    Nanostructural ZnO Thin Films have been synthesized by simple and economic Chemical Bath Deposition technique onto glass substrate with bath temperature at 60°C for 1 hour. Structural, Optical, Electrical and topographical properties of the prepared Thin Films were investigated by GIXRD, I-V Measurement System, UV-Visible Spectrophotometer and AFM respectively. Calculated lattice parameters are in good agreement with the standard JCPDS card (36-1451) values, exhibits Hexagonal Wurtzite crystal structure. I-V Measurement curve has shown ohmic nature in dark condition and responds to light illumination which reveals Photo sensor properties. After illumination of 60W light, decrease in resistance was observed from 110.9 KΩ to 104.4 KΩ. The change in current and calculated Photo sensitivity was found to be 3.51 µA and 6.3% respectively. Optical band gap was found to be 3.24 eV. AFM images revealed uniform deposition over entire glass substrate with 32.27 nm average roughness of the film.

  7. A Soluble Dynamic Complex Strategy for the Solution-Processed Fabrication of Organic Thin-Film Transistors of a Boron-Containing Polycyclic Aromatic Hydrocarbon.

    Science.gov (United States)

    Matsuo, Kyohei; Saito, Shohei; Yamaguchi, Shigehiro

    2016-09-19

    The solution-processed fabrication of thin films of organic semiconductors enables the production of cost-effective, large-area organic electronic devices under mild conditions. The formation/dissociation of a dynamic B-N coordination bond can be used for the solution-processed fabrication of semiconducting films of polycyclic aromatic hydrocarbon (PAH) materials. The poor solubility of a boron-containing PAH in chloroform, toluene, and chlorobenzene was significantly improved by addition of minor amounts (1 wt % of solvent) of pyridine derivatives, as their coordination to the boron atom suppresses the inherent propensity of the PAHs to form π-stacks. Spin-coating solutions of the thus formed Lewis acid-base complexes resulted in the formation of amorphous thin films, which could be converted into polycrystalline films of the boron-containing PAH upon thermal annealing. Organic thin-film transistors prepared by this solution process displayed typical p-type characteristics.

  8. Solution-route low-temperature fabrication of thin-film p-n junctions

    Science.gov (United States)

    Panamá, Gustavo; Ayag, Kevin; Kim, Hongdoo

    2016-11-01

    In this work, p-n junctions were fabricated at low temperature by means of UV-assisted thermal annealing. At 200 °C, remarkable rectifying and optical properties were observed due to the conversion of the sol-gel precursors to oxide films, which was aided by UV exposure. The resulting p-NiO/n-ZnO structures are featured as the thinnest ever reported (≈55 nm) based on a solution process with a large forward electrical current 10 -2 -10 -1 A cm-2 and the lowest leakage current (1 μA cm-2). UV light and precursor solution engineering contributed to form metal-oxide bonding at relatively low temperature in ambient conditions. The heterojunctions fabricated by the proper combination of these alternatives and simple processes were evaluated using UV-vis and FT-IR spectroscopy, FE-SEM, AFM, XRD, XPS, and I-V curves.

  9. Degradation process in organic thin film devices fabricated using P3HT

    Indian Academy of Sciences (India)

    Rashmi; Ashok K Kapoor; Upendra Kumar; V R Balakrishnan; P K Basu

    2007-03-01

    The stability of regioregular poly(3-hexylthiophene 2,5-diyl) (P3HT) thin films sandwiched between indium tin oxide (ITO) and aluminium (Al) electrodes have been investigated under normal environmental conditions (25°C and RH ∼ 45-50%). Electrical and optical properties of ITO/P3HT/Al devices have been studied over a period of 30 days. Mobility of the order of 10-4 cm2/V-s has been obtained from the 2 law in the as- deposited P3HT films. Scanning electron microscopy (SEM) investigations show blistering of Al contacts in devices with a poly(3,4-ethylenedioxythiophene) (PEDOT) interlayer on application of voltage whereas no blistering is seen in devices without PEDOT. The results have been explained in terms of trap generation and propagation and the moisture-absorbing nature of PEDOT.

  10. High deposition rate processes for the fabrication of microcrystalline silicon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Michard, S. [Institute of Energy and Climate Research 5 - Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany); Meier, M., E-mail: ma.meier@fz-juelich.de [Institute of Energy and Climate Research 5 - Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany); Grootoonk, B.; Astakhov, O.; Gordijn, A.; Finger, F. [Institute of Energy and Climate Research 5 - Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany)

    2013-05-15

    The increase of deposition rate of microcrystalline silicon absorber layers is an essential point for cost reduction in the mass production of thin-film silicon solar cells. In this work we explored a broad range of plasma enhanced chemical vapor deposition (PECVD) parameters in order to increase the deposition rate of intrinsic microcrystalline silicon layers keeping the industrial relevant material quality standards. We combined plasma excitation frequencies in the VHF band with the high pressure high power depletion regime using new deposition facilities and achieved deposition rates as high as 2.8 nm/s. The material quality evaluated from photosensitivity and electron spin resonance measurements is similar to standard microcrystalline silicon deposited at low growth rates. The influence of the deposition power and the deposition pressure on the electrical and structural film properties was investigated.

  11. Properties of Te-rich cadmium telluride thin films fabricated by closed space sublimation technique

    Science.gov (United States)

    Abbas Shah, N.; Ali, A.; Ali, Z.; Maqsood, A.; Aqili, A. K. S.

    2005-11-01

    Cadmium telluride (CdTe) thin films were prepared by the closed space sublimation (CSS) technique, using CdTe powder as evaporant onto substrates of water-white glass. In the next step, the same procedure was adopted by using tellurium as evaporant and already deposited CdTe film as substrate. Such compositions were then annealed at 300 °C for 30 min to obtain Te-enriched films. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), spectrophotometry, DC electrical resistivity, dark conductivity and activation energy analysis as a function of temperature by two-probe method. The electron microprobe analyzer (EMPA) results showed an increase of Te content composition in the samples as the mass of the Te-deposition increased in CdTe. The Hall measurements indicated the increase in mobility and carrier concentrations of CdTe films by addition of tellurium. A significant change in the shape and size of the CdTe grains were observed.

  12. Modulation of aqueous precursor solution temperature for the fabrication of high-performance metal oxide thin-film transistors

    Science.gov (United States)

    Lee, Keun Ho; Park, Jee Ho; Yoo, Young Bum; Han, Sun Woong; Jong Lee, Se; Baik, Hong Koo

    2015-08-01

    In this study, we present a simple process for the fabrication of aqueous-solution-processed metal oxide thin-film transistors (TFTs) via the manipulation of precursor solution temperature. Indium oxide TFTs fabricated from a solution of indium nitrate at 4 °C exhibited the highest mobility of 2.73 cm2/(V·s) at an annealing temperature of 200 °C. When the temperature of the metal oxide precursor solution is 4 °C, metal cations within the solution can be fully surrounded by H2O molecules owing to the high dielectric constant of H2O at low temperatures. These metal complexes are advantageous for the conversion of metal oxides via thermally driven hydrolysis and condensation processes due to their high potential energies. The same techniques have been applied successfully with high-order metal oxides including indium zinc oxide, indium gallium oxide, and indium gallium zinc oxide.

  13. Flexible nickel-doped zinc oxide thin-film transistors fabricated on plastic substrates at low temperature

    Science.gov (United States)

    Huang, Lingling; Han, Dedong; Chen, Zhuofa; Cong, Yingying; Wu, Jing; Zhao, Nannan; Dong, Junchen; Zhao, Feilong; Liu, Lifeng; Zhang, Shengdong; Zhang, Xing; Wang, Yi

    2015-04-01

    High-performance nickel (Ni)-doped zinc oxide thin-film transistors (NZO TFTs) have been successfully fabricated on transparent flexible plastic substrates at a low temperature. The effect of different oxygen partial pressures during channel deposition on the electrical properties of NZO TFTs was studied to improve the device performance. We found that the oxygen partial pressure during channel deposition has a significant influence on the performance of NZO TFTs. Finally, it was demonstrated that a NZO film with 100% Ar sputtering gas during channel deposition exhibited the best electrical properties, with a drain current on/off ratio of 108, a positive threshold voltage of 2.59 V, a subthreshold swing of 233 mV/decade, and a saturation mobility of 118.9 cm2·V-1·s-1. The results show that Ni-doped ZnO is a promising candidate for flexible fully transparent displays.

  14. Effect of etching stop layer on characteristics of amorphous IGZO thin film transistor fabricated at low temperature

    Directory of Open Access Journals (Sweden)

    Xifeng Li

    2013-03-01

    Full Text Available Transparent bottom-gate amorphous Indium-Gallium-Zinc Oxide (a-IGZO thin-film transistors (TFTs had been successfully fabricated at relative low temperature. The influence of reaction gas ratio of N2O and SiH4 during the growth of etching stop layer (SiOx on the characteristics of a-IGZO TFTs was investigated. The transfer characteristics of the TFTs were changed markedly because active layer of a-IGZO films was modified by plasma in the growth process of SiOx. By optimizing the deposition parameters of etching stop layer process, a-IGZO TFTs were manufactured and exhibited good performance with a field-effect mobility of 8.5 cm2V-1s-1, a threshold voltage of 1.3 V, and good stability under gate bias stress of 20 V for 10000 s.

  15. Room temperature ferromagnetism of Mn-doped SnO{sub 2} thin films fabricated by sol-gel method

    Energy Technology Data Exchange (ETDEWEB)

    Xiao Yuhua [Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000 (China)], E-mail: xiaoyh04@lzu.cn; Ge Shihui; Xi Li; Zuo Yalu; Zhou Xueyun; Zhang Bangmin; Zhang Li [Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Li Chengxian; Han Xiufeng; Wen Zhenchao [State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)

    2008-09-15

    Sn{sub 1-x}Mn{sub x}O{sub 2} (x {<=} 0.11) thin films spin-coated on Si (1 1 1) substrate were fabricated by sol-gel method. X-ray diffraction revealed that single-phase rutile polycrystalline structure was obtained for x up to about 0.078. Evolution of the lattice parameters and X-ray photoelectron spectroscopy studies confirmed the incorporation of Mn{sup 3+} cations into rutile SnO{sub 2} lattice. Magnetic measurements revealed that all Sn{sub 1-x}Mn{sub x}O{sub 2} thin films exhibit ferromagnetism at room temperature, which is identified as an intrinsic characteristic. Magnetization data showed that the average magnetic moment per Mn atom decreased and the coercivity increases with increasing Mn content. The origin of room temperature ferromagnetism can be understood in terms of the percolation of the bound magnetic polaron. Our experimental results prove that the sol-gel method is an effective method for fabrication of transition metal doped SnO{sub 2} nanostructures with room temperature ferromagnetism by chemical synthesis.

  16. Atomic layer deposition for fabrication of HfO2/Al2O3 thin films with high laser-induced damage thresholds.

    Science.gov (United States)

    Wei, Yaowei; Pan, Feng; Zhang, Qinghua; Ma, Ping

    2015-01-01

    Previous research on the laser damage resistance of thin films deposited by atomic layer deposition (ALD) is rare. In this work, the ALD process for thin film generation was investigated using different process parameters such as various precursor types and pulse duration. The laser-induced damage threshold (LIDT) was measured as a key property for thin films used as laser system components. Reasons for film damaged were also investigated. The LIDTs for thin films deposited by improved process parameters reached a higher level than previously measured. Specifically, the LIDT of the Al2O3 thin film reached 40 J/cm(2). The LIDT of the HfO2/Al2O3 anti-reflector film reached 18 J/cm(2), the highest value reported for ALD single and anti-reflect films. In addition, it was shown that the LIDT could be improved by further altering the process parameters. All results show that ALD is an effective film deposition technique for fabrication of thin film components for high-power laser systems.

  17. Fabrication of (110)-one-axis-oriented perovskite-type oxide thin films and their application to buffer layer

    Science.gov (United States)

    Sato, Tomoya; Ichinose, Daichi; Kimura, Junichi; Inoue, Takaaki; Mimura, Takanori; Funakubo, Hiroshi; Uchiyama, Kiyoshi

    2016-10-01

    BaCe0.9Y0.1O3-δ (BCYO) and SrZr0.8Y0.2O3-δ (SZYO) thin films of perovskite-type oxides were deposited on (111)Pt/TiO x /SiO2/(100)Si substrates. X-ray diffraction patterns showed that the (110)-oriented BCYO and SZYO thin films were grown on (111)Pt/Si substrates directly without using any buffer layers. Thin films of SrRuO3 (SRO), a conductive perovskite-type oxide, were also deposited on those films and highly (110)-oriented SRO thin films were obtained. We believe that this (110)-oriented SRO works as a buffer layer to deposit (110)-oriented perovskite-type ferroelectric oxide thin films as well as a bottom electrode and can modify the ferroelectric properties of the oxide thin films by controlling their crystallographic orientations.

  18. Fabrication and characterizations of thin film metallic glasses: Antibacterial property and durability study for medical application

    Energy Technology Data Exchange (ETDEWEB)

    Chu, Jinn P., E-mail: jpchu@mail.ntust.edu.tw [Dept. of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Liu, Tz-Yah; Li, Chia-Lin; Wang, Chen-Hao [Dept. of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Jang, Jason S.C. [Dept. of Mechanical Engineering, National Taiwan Central University, Jhongli 32001, Taiwan (China); Chen, Ming-Jen; Chang, Shih-Hsin; Huang, Wen-Chien [Mackay Memorial Hospital, Taipei 10449, Taiwan (China)

    2014-06-30

    Metallic glasses with the disordered atomic structure have unique properties of high strength, high toughness, good corrosion and abrasion resistances. These materials are thus potentially useful for medical application. In this work, we evaluate the antibacterial property and durability of materials sputter-coated with Zr-based (Zr{sub 53}Cu{sub 33}Al{sub 9}Ta{sub 5}) and Cu-based (Cu{sub 48}Zr{sub 42}Ti{sub 4}Al{sub 6}) thin film metallic glasses (TFMGs). Good adhesive coating of Zr-based TFMG on the dermatome gives rise to blade sharpness improvement of ∼ 27%, substantial surface roughness reduction of ∼ 66% and smoother incised wound on the pig skin. As compared to 48.8° on the bare Si wafer, the water contact angles of 119.5° and 106.6° for Zr- and Cu-based TFMGs, respectively, reveal the hydrophobic characteristic of the coated surfaces. The bacterial adhesion of Escherichia coli and Staphylococcus aureus to both Zr- and Cu-based TFMGs is hindered to different extents. - Highlights: • Thin film metallic glass (TFMG) coatings are evaluated for medical application. • Good adhesive TFMG on the dermatome yields blade sharpness improvement of ∼ 27%. • A reduction of ∼ 66% in surface roughness is observed after coating with TFMG. • Water contact angle measurement reveals the hydrophobic characteristic for TFMGs. • Bacterial adhesion of E. coli and S. aureus to TFMGs is hindered.

  19. Analysis and optimization of thin film photovoltaic materials and device fabrication by real time spectroscopic ellipsometry

    Science.gov (United States)

    Li, Jian; Stoke, Jason A.; Podraza, Nikolas J.; Sainju, Deepak; Parikh, Anuja; Cao, Xinmin; Khatri, Himal; Barreau, Nicolas; Marsillac, Sylvain; Deng, Xunming; Collins, Robert W.

    2007-09-01

    Methods of spectroscopic ellipsometry (SE) have been applied to investigate the growth and properties of the material components used in the three major thin film photovoltaics technologies: (1) hydrogenated silicon (Si:H); (2) cadmium telluride (CdTe); and (3) copper indium-gallium diselenide (CuIn 1-xGa xSe2 or CIGS). In Si:H technology, real time SE (RTSE) has been applied to establish deposition phase diagrams that describe very high frequency (vhf) plasmaenhanced chemical vapor deposition (PECVD) processes for hydrogenated silicon (Si:H) and silicon-germanium alloy (Si 1-xGe x:H) thin films. This study has reaffirmed that the highest efficiencies for a-Si:H and a-Si 1-xGe x:H component solar cells of multijunction devices are obtained when the i-layers are prepared under maximal H II dilution conditions. In CdTe technology, the magnetron sputter deposition of polycrystalline CdTe, CdS, and CdTe 1-xS x thin films as well as the formation of CdS/CdTe and CdTe/CdS heterojunctions has been studied. The nucleation and growth behaviors of CdTe and CdS show strong variations with deposition temperature, and this influences the ultimate grain size. The dielectric functions ɛ of the CdTe 1-xS x alloys have been deduced in order to set up a database for real time investigation of inter-diffusion at the CdS/CdTe and CdTe/CdS interfaces. In CIGS technology, strong variations in ɛ of the Mo back contact during sputter deposition have been observed, and these results have been understood applying a Drude relaxation time that varies with the Mo film thickness. Ex-situ SE measurements of a novel In IIS 3 window layer have shown critical point structures at 2.77+/-0.08 eV, 4.92+/-0.005 eV, and 5.64+/-0.005 eV, as well as an absorption tail with an onset near 1.9 eV. Simulations of solar cell performance comparing In IIS 3 and the conventional CdS have revealed similar quantum efficiencies, suggesting the possibility of a Cd-free window layer in CIGS technology.

  20. Comparison of Y{sub 2}O{sub 3}:Bi{sup 3+} phosphor thin films fabricated by the spin coating and radio frequency magnetron techniques

    Energy Technology Data Exchange (ETDEWEB)

    Jafer, R.M.; Yousif, A. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA 9300 (South Africa); Department of Physics, Faculty of Education, University of Khartoum, P.O. Box 321, Postal Code 11115 Omdurman (Sudan); Kumar, Vinod [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA 9300 (South Africa); Photovoltaic Laboratory, Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi 110016 (India); Pathak, Trilok Kumar [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA 9300 (South Africa); Semiconductor Physics Lab, Department of Physics, Gurukula Kangri University, Haridwar (India); Purohit, L.P. [Semiconductor Physics Lab, Department of Physics, Gurukula Kangri University, Haridwar (India); Swart, H.C., E-mail: swarthc@ufs.ac.za [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA 9300 (South Africa); Coetsee, E., E-mail: CoetseeE@ufs.ac.za [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA 9300 (South Africa)

    2016-09-15

    The reactive radio-frequency (RF) magnetron sputtering and spin coating fabrication techniques were used to fabricate Y{sub 2−x}O{sub 3}:Bi{sub x=0.5%} phosphor thin films. The two techniques were analysed and compared as part of investigations being done on the application of down-conversion materials for a Si solar cell. The morphology, structural and optical properties of these thin films were investigated. The X-ray diffraction results of the thin films fabricated by both techniques showed cubic structures with different space groups. The optical properties showed different results because the Bi{sup 3+} ion is very sensitive towards its environment. The luminescence results for the thin film fabricated by the spin coating technique is very similar to the luminescence observed in the powder form. It showed three obvious emission bands in the blue and green regions centered at about 360, 410 and 495 nm. These emissions were related to the {sup 3}P{sub 1}–{sup 1}S{sub 0} transition of the Bi{sup 3+} ion situated in the two different sites of the Y{sub 2}O{sub 3} matrix with I a-3(206) space group. Whereas the thin film fabricated by the radio frequency magnetron technique showed a broad single emission band in the blue region centered at about 416 nm. This was assigned to the {sup 3}P{sub 1}–{sup 1}S{sub 0} transition of the Bi{sup 3+} ion situated in one of the Y{sub 2}O{sub 3} matrix's sites with a Fm-3 (225) space group. The spin coating fabrication technique is suggested to be the best technique to fabricate the Y{sub 2}O{sub 3}:Bi{sup 3+} phosphor thin films. - Highlights: • RF sputtering and spin coating were used to fabricate Y{sub 2−x}O{sub 3}:Bi{sub x=0.5%} phosphor thin films. • XRD results of the two films showed cubic structures with different space groups. • PL showed different emission for the Bi{sup 3+} ions in the two films. • Three emission bands in the blue and green regions centered at about 360, 410 and 495 nm. • RF

  1. Fabrication of Cu2Zn(Sn,Si)S4 thin films using a two-step method for solar cell applications

    Science.gov (United States)

    Xu, Jiaxiong; Liu, Yaqun; Yang, Yuanzheng

    2016-09-01

    To explore Cu2ZnSnS4-based materials for solar cell applications, for the first time, Cu2Zn(Sn,Si)S4 thin films were fabricated using a two-step method that consists of sputtering and post-sulfurization. The films were characterized and then incorporated into solar cells. X-ray diffraction and Raman spectroscopy revealed the formation of Cu2Zn(Sn,Si)S4 structure with traces of a secondary phase after sulfurization treatments. The degree of sulfurization was enhanced as the temperature was increased. In addition, these techniques revealed that there was no silicon or silicide phase present. The Si/Sn atomic ratio was 0.04-0.10. The thin films exhibited Cu-poor and Zn-rich characteristics and high absorption coefficients. The direct optical band gap of the thin films ranged between 1.42 and 1.52 eV. Heterojunction solar cells (glass/Mo/Cu2Zn(Sn,Si)S4/CdS/i-ZnO/ZnO:Al/Al) were fabricated and exhibited the highest conversion efficiency of 0.427%. This study showed the feasibilities of fabricating Cu2Zn(Sn,Si)S4 thin films by a two-step method and using Cu2Zn(Sn,Si)S4 thin films as an absorber layer within a solar cell.

  2. Fabrication and Characteristics of High Capacitance Al Thin Films Capacitor Using a Polymer Inhibitor Bath in Electroless Plating Process.

    Science.gov (United States)

    Cho, Young-Lae; Lee, Jung-Woo; Lee, Chang-Hyoung; Choi, Hyung-Seon; Kim, Sung-Su; Song, Young Il; Park, Chan; Suh, Su-Jeong

    2015-10-01

    An aluminum (Al) thin film capacitor was fabricated for a high capacitance capacitor using electrochemical etching, barrier-type anodizing, and electroless Ni-P plating. In this study, we focused on the bottom-up filling of Ni-P electrodes on Al2O3/Al with etched tunnels. The Al tunnel pits were irregularly distributed on the Al foil, diameters were in the range of about 0.5~1 μm, the depth of the tunnel pits was approximately 35~40 μm, and the complex structure was made full filled hard metal. To control the plating rate, the experiment was performed by adding polyethyleneimine (PEI, C2H5N), a high molecular substance. PEI forms a cross-link at the etching tunnel inlet, playing the role of delaying the inlet plating. When the PEI solution bath was used after activation, the Ni-P layer was deposited selectively on the bottoms of the tunnels. The characteristics were analyzed by adding the PEI addition quantity rate of 100~600 mg/L into the DI water. The capacitance of the Ni-P/Al2O3 (650~700 nm)/Al film was measured at 1 kHz using an impedance/gain phase analyzer. For the plane film without etch tunnels the capacitance was 12.5 nF/cm2 and for the etch film with Ni-P bottom-up filling the capacitance was 92 nF/cm2. These results illustrate a remarkable maximization of capacitance for thin film metal capacitors.

  3. MOS structure fabrication by thermal oxidation of multilayer metal thin films

    Institute of Scientific and Technical Information of China (English)

    Mohammad Orvatiniat; Atefeh Chahkoutahi

    2011-01-01

    A novel approach for the fabrication of a metal oxide semiconductor (MOS) structure was reported.The process comprises electrochemical deposition of aluminum and zinc layers on a base of nickel-chromium alloy.This two-layer structure was thermally oxidized at 400 ℃ for 40 min to produce thin layers of aluminum oxide as an insulator and zinc oxide as a semiconductor on a metallic substrate.Using deposition parameters,device dimensions and SEM micrographs of the layers,the device parameters were calculated.The resultant MOS structure was characterized by a C-V curve method.From this curve,the device maximum capacitance and threshold voltage were estimated to be about 0.74 nF and -2.9 V,respectively,which are in the order of model-based calculations.

  4. Fabrication of a Transparent Anti-stain Thin Film Using an Atmospheric Pressure Cold Plasma Deposition System

    Directory of Open Access Journals (Sweden)

    Suzaki Y.

    2013-08-01

    Full Text Available Recently, outdoor-constructed solar panels have a problem such as power generation efficiency is reduced by the face plate dirt. On the other hand, electronic touch panels have a problem such as deterioration of visibility of the screen by finger grease stain. To solve these problems, we need to fabricate the anti-stain surfaces which have superhydrophobic and oil-repellent abilities without spoiling the transparency of the transparent substrate. In this study, we fabricated lotus leaves like surface on a glass substrate. Firstly, SiO2 particles of ca. 100 nm diameter were arranged on the glass substrates. Secondly, to obtain the fractal-like structure (ultra-micro-rough structure on the surface, ZnO thin film having a columnar structure was fabricated on the SiO2 particles by using an atmospheric pressure cold plasma deposition system. By using these processes, the ZnO columns formed radiantly on the spherical surface of the SiO2 particles. Furthermore, without spoiling the ultra-micro-rough structure, a transparent anti-stain monolayer with low surface energy was prepared by using a chemical adsorption technique onto the surface. Average value of the water droplet contact angles of the samples fabricated was 151.8 deg. Field emission scanning electron microscope (FE-SEM observation reviled that this sample has a raspberry structure in which columnar structure has grown radially on the SiO2 particles.

  5. Thin film zinc oxide gas sensor fabricated using near-field electrospray

    Science.gov (United States)

    Zheng, Gaofeng; Zhu, Ping; Sun, Lingling; Jiang, Jiaxin; Liu, Juan; Wang, Xiang; Li, Wenwang

    2016-12-01

    Near-field electrospray was used to deposit zinc acetate precursor particles over comb electrodes. These particles were heated and oxidized to form a zinc oxide (ZnO) semiconductor at 500 °C. The resulting ZnO thin film on the comb electrode was incorporated into a gas sensor, which was examined using a custom built measurement system. The current that was measured through the electrodes was used to calculate the resistance of the ZnO between the fingers of the comb electrode. The resistance decreased as the sensor was exposed to the target gas of ethanol, while the sensing response (R0/Rg) increased at higher concentrations of target gas. The ZnO sensor displayed high sensitivity because of the small diameters and high specific surface area of the electrospray particles. The ZnO sensors show great promise for use as micro/nano gas sensors as they exhibit high sensitivity, repeatability and stability.

  6. Thin-Film Metamaterials called Sculptured Thin Films

    CERN Document Server

    Lakhtakia, Akhlesh

    2010-01-01

    Morphology and performance are conjointed attributes of metamaterials, of which sculptured thin films (STFs) are examples. STFs are assemblies of nanowires that can be fabricated from many different materials, typically via physical vapor deposition onto rotating substrates. The curvilinear--nanowire morphology of STFs is determined by the substrate motions during fabrication. The optical properties, especially, can be tailored by varying the morphology of STFs. In many cases prototype devices have been fabricated for various optical, thermal, chemical, and biological applications.

  7. Preparation and Characterization of Cu2ZnSnS4 Thin Films and Solar Cells Fabricated from Quaternary Cu-Zn-Sn-S Target

    Directory of Open Access Journals (Sweden)

    Min Xie

    2013-01-01

    Full Text Available CZTS thin films were fabricated through sputtering from a quaternary Cu-Zn-Sn-S target, followed by a sulfurization process. CZTS thin-film solar cells were also fabricated and a highest efficiency of 4.04% was achieved. It has been found that obvious Zn loss occurs during the sputtering and poorly crystallized CZTS are formed in the sputtered films. The Zn loss leads to the appearance of SnS. A sulfurization process can obviously improve the crystallinity of CZTS and films with grain size of several hundred nanometers can be obtained after sulfurization. The optical band gap of the films is estimated to be 1.57 eV. The electrical properties of the 4.04% efficient solar cell were investigated and it has been found that cell has obvious deficiency in minority carrier lifetime. This deficiency should be responsible for the low Jsc and low Voc of our cell.

  8. Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.

    Science.gov (United States)

    Huang, Fei; Chen, Xing; Liang, Xiao; Qin, Jun; Zhang, Yan; Huang, Taixing; Wang, Zhuo; Peng, Bo; Zhou, Peiheng; Lu, Haipeng; Zhang, Li; Deng, Longjiang; Liu, Ming; Liu, Qi; Tian, He; Bi, Lei

    2017-02-01

    Owing to their prominent stability and CMOS compatibility, HfO2-based ferroelectric films have attracted great attention as promising candidates for ferroelectric random-access memory applications. A major reliability issue for HfO2 based ferroelectric devices is fatigue. So far, there have been a few studies on the fatigue mechanism of this material. Here, we report a systematic study of the fatigue mechanism of yttrium-doped hafnium oxide (HYO) ferroelectric thin films deposited by pulsed laser deposition. The influence of pulse width, pulse amplitude and temperature on the fatigue behavior of HYO during field cycling is studied. The temperature dependent conduction mechanism is characterized after different fatigue cycles. Domain wall pinning caused by carrier injection at shallow defect centers is found to be the major fatigue mechanism of this material. The fatigued device can fully recover to the fatigue-free state after being heated at 90 °C for 30 min, confirming the shallow trap characteristic of the domain wall pinning defects.

  9. ZnO thin films on single carbon fibres fabricated by Pulsed Laser Deposition (PLD)

    Science.gov (United States)

    Krämer, André; Engel, Sebastian; Sangiorgi, Nicola; Sanson, Alessandra; Bartolomé, Jose F.; Gräf, Stephan; Müller, Frank A.

    2017-03-01

    Single carbon fibres were 360° coated with zinc oxide (ZnO) thin films by pulsed laser deposition using a Q-switched CO2 laser with a pulse duration τ ≈ 300 ns, a wavelength λ = 10.59 μm, a repetition frequency frep = 800 Hz and a peak power Ppeak = 15 kW in combination with a 3-step-deposition technique. In a first set of experiments, the deposition process was optimised by investigating the crystallinity of ZnO films on silicon and polished stainless steel substrates. Here, the influence of the substrate temperature and of the oxygen partial pressure of the background gas were characterised by scanning electron microscopy and X-ray diffraction analyses. ZnO coated carbon fibres and conductive glass sheets were used to prepare photo anodes for dye-sensitised solar cells in order to investigate their suitability for energy conversion devices. To obtain a deeper insight of the electronic behaviour at the interface between ZnO and substrate I-V measurements were performed.

  10. The fabrication and characterization of double-gyroid and thin film photovoltaics

    Science.gov (United States)

    McCarthy, Robert F.

    Renewable energy can offer cleaner sources of electricity, and photovoltaics have perhaps the greatest potential due to the large quantity of solar power that hits the earth's surface. However, the cost of electricity from photovoltaics is still too high. There are two paths for reducing this cost, the first being cheaper manufacturing. Our research group explores this option by looking at Cu2ZnSn(S,Se)4 (CZTSSe) thin film devices deposited by nanocrystal inks, which use earth abundant materials, and can be made using cheap deposition processes. The second path is increasing solar cell efficiency. We've explored this route using double-gyroid (DG) nanostructure devices that should be capable of multiple exciton generation (MEG), a kind of photophysics that allows for increased photocurrent and device efficiency. Electrical characterization of our thin film devices shows a back contact barrier of 75 meV exists in our CIGSe device. CZTSSe devices have a defect level at 57 meV above its valence band, most likely due to a copper on zinc antisite. This defect acts as the main acceptor state. The device's series resistance increases drastically with decreasing temperature. Interestingly, this correlates with increasing photoluminescence at an energy of 1.5 eV, correlating with a trap state in the CdS layer of the device. These results suggest that the CdS layer could be the source of increasing series resistance with temperature. With DG research, electrodeposited lead selenide was improved using new applied potential techniques and additives in solution, leading to less roughness and greater surface coverage. Bulk PbSe devices showed very nice diode behavior. CdSe and CdTe films were also electrodeposited, and films were improved by optimizing post-deposition techniques to make bulk CdTe devices with efficiencies over 4%. With DG films, an increased band gap was measured in DG PbS (0.11 eV increase) and CdSe films (0.05-0.14 eV increase), indicating quantum confinement

  11. Effect of zinc doping on the structural and magnetic properties of nickel ferrite thin films fabricated by pulsed laser deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Raghavender, A.T., E-mail: raghavi9@gmail.com [Nanomagnetism Laboratory, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Hoa Hong, Nguyen, E-mail: nguyenhong@snu.ac.kr [Nanomagnetism Laboratory, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Chikoidze, Ekaterina; Dumont, Yves [Laboratoire GeMAC, UMR 8635 CNRS—Université de Versailles, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France); Kurisu, Makio [Department of Physics, Graduate School of Science and Engineering, Ehime University, Matsuyama 790-8577 (Japan)

    2015-03-15

    Zinc, as known as non-magnetic element, has been doped into nickel ferrite under thin film form to modify its structural and magnetic properties. Laser ablated Ni{sub 1−x}Zn{sub x}Fe{sub 2}O{sub 4} (0.0≤x≤0.5) thin films grown on R-cut Al{sub 2}O{sub 3} (0001) substrates using pulsed laser deposition (PLD) technique are single phase with (l l l) orientation, and they are strongly room temperature ferromagnetic. Compared to other Ni–Zn ferrite thin films we observed the enhancement in coercivity H{sub c}. Higher H{sub c} thin films can be used as potential candidates for modern miniaturization of electronic devices. - Highlights: • Laser ablated ferrite thin films. • Enhanced structural and magnetic properties of Ni–Zn ferrite thin films. • Ni–Zn Ferrite films are strongly room temperature ferromagnetic. • Higher coercivity in fabricated films.

  12. Fabrication of TiO{sub 2} nanotubes by anodization of Ti thin films for VOC sensing

    Energy Technology Data Exchange (ETDEWEB)

    K Latin-Small-Letter-Dotless-I l Latin-Small-Letter-Dotless-I nc, N.; Sennik, E. [Gebze Institute of Technology, Faculty of Science, Department of Physics, 41400 Kocaeli (Turkey); Oeztuerk, Z.Z., E-mail: zozturk@gyte.edu.tr [Gebze Institute of Technology, Faculty of Science, Department of Physics, 41400 Kocaeli (Turkey); TUeBITAK-Marmara Research Center, Materials Institute, 41470 Gebze-Kocaeli (Turkey)

    2011-11-30

    Ti thin films were anodized in aqueous HF (0.5 wt.%) and in polar organic (0.5 wt.% NH{sub 4}F + ethylene glycol) electrolytes to form TiO{sub 2} nanotube arrays. Ti thin films were deposited on microscope glass substrates and then anodized. Anodization was performed at potentials ranging from 5 V to 20 V for the aqueous HF and from 20 V to 60 V for the polar organic electrolytes over the temperatures range from 0 to 20 Degree-Sign C. The TiO{sub 2} nanotubes were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and energy dispersive X-ray spectroscopy (EDX). It has been observed that anodization of the deposited Ti thin films with aqueous HF solution at 0 Degree-Sign C resulted in nanotube-type structures with diameters in the range of 30-80 nm for an applied voltage of 10 V. In addition, the nanotube-type structure is observed for polar organic electrolyte at room temperature at the anodization voltage higher than 40 V. The volatile organic compound (VOC) sensing properties of TiO{sub 2} nanotubes fabricated using different electrolytes were investigated at 200 Degree-Sign C. The maximum sensor response is obtained for carbon tetrachloride. The sensor response is dependent on porosity of TiO{sub 2}. The highest sensor response is observed for TiO{sub 2} nanotubes which are synthesized using aqueous HF electrolyte and have very high porosity.

  13. Thin film interconnect processes

    Science.gov (United States)

    Malik, Farid

    Interconnects and associated photolithography and etching processes play a dominant role in the feature shrinkage of electronic devices. Most interconnects are fabricated by use of thin film processing techniques. Planarization of dielectrics and novel metal deposition methods are the focus of current investigations. Spin-on glass, polyimides, etch-back, bias-sputtered quartz, and plasma-enhanced conformal films are being used to obtain planarized dielectrics over which metal films can be reliably deposited. Recent trends have been towards chemical vapor depositions of metals and refractory metal silicides. Interconnects of the future will be used in conjunction with planarized dielectric layers. Reliability of devices will depend to a large extent on the quality of the interconnects.

  14. Chiral atomically thin films

    Science.gov (United States)

    Kim, Cheol-Joo; Sánchez-Castillo, A.; Ziegler, Zack; Ogawa, Yui; Noguez, Cecilia; Park, Jiwoong

    2016-06-01

    Chiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics, stereochemistry and spintronics. In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films, or arrays of fabricated building blocks, could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (θ) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left- and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg μm-1) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by θ and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra.

  15. High-performance calcium-doped zinc oxide thin-film transistors fabricated on glass at low temperature

    Science.gov (United States)

    Yu, Wen; Han, Dedong; Cui, Guodong; Cong, Yingying; Dong, Junchen; Zhang, Xiaomi; Zhang, Xing; Wang, Yi; Zhang, Shengdong

    2016-04-01

    High-performance calcium-doped zinc oxide thin-film transistors (Ca-ZnO TFTs) have been successfully fabricated on transparent glass at low temperature by RF magnetron sputtering. To study the effects of calcium doping on zinc oxide thin-film transistors, the characteristics of Ca-ZnO TFTs and ZnO TFTs are compared and analyzed in detail from different perspectives, including electrical performance, surface morphology, and crystal structure of the material. The results suggest that the incorporation of calcium element can decrease the root-mean-square roughness of the material, suppress growth of a columnar structure, and improve device performance. The TFTs with Ca-ZnO active layer exhibit excellent electrical properties with the saturation mobility (μsat) of 147.1 cm2 V-1 s-1, threshold voltage (V t) of 2.91 V, subthreshold slope (SS) of 0.271 V/dec, and I on/I off ratio of 2.34 × 108. In addition, we also study the uniformity of the devices. The experimental results show that the Ca-ZnO TFTs possess good uniformity, which is important for large-area application.

  16. 薄膜太阳电池用TCO薄膜制造技术及其特性研究%Research on the Fabrication Technology and Characteristics for TCO Thin Films Applied in Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    陈新亮; 王斐; 闫聪博; 李林娜; 林泉; 倪牮; 张晓丹; 耿新华; 赵颖

    2011-01-01

    The up-to-date experiment progresses in TCO thin films on glass and flexible substrates and their ap-plications for Si-based thin film solar cells were presented. Textured surface with good light scattering can improve the solar cells efficiency, stability and reduce the production costs. Magnetron sputtering and LP-MOCVD are the main fabrication technology for textured ZnO-TCO thin films. TCO thin films (IMO, IWO, ZnO : Ga) with high mobility and these thin films on the flexible substrates have become the key issues.%阐述了玻璃衬底、柔性衬底透明导电氧化物薄膜(Transparent conductive oxides-TCO)以及硅基薄膜太阳电池应用方面的最新研究成果.绒面结构可以提高薄膜太阳电池效率和稳定性并降低生产成本.磁控溅射技术和LP-MOCVD技术是制造绒面结构ZnO-TCO薄膜(例如“弹坑”状和“类金字塔”状表面)的主流生长技术;高迁移率TCO薄膜(IMO、IWO、ZnO∶Ga等)以及柔性衬底TCO薄膜是研究开发的重点.

  17. High-efficiency superconducting nanowire single-photon detectors fabricated from MoSi thin-films

    CERN Document Server

    Verma, V B; Bussières, F; Horansky, R D; Dyer, S D; Lita, A E; Vayshenker, I; Marsili, F; Shaw, M D; Zbinden, H; Mirin, R P; Nam, S W

    2015-01-01

    We demonstrate high-efficiency superconducting nanowire single-photon detectors (SNSPDs) fabricated from MoSi thin-films. We measure a maximum system detection efficiency (SDE) of 87 +- 0.5 % at 1542 nm at a temperature of 0.7 K, with a jitter of 76 ps, maximum count rate approaching 10 MHz, and polarization dependence as low as 3.4 +- 0.7 % The SDE curves show saturation of the internal efficiency similar to WSi-based SNSPDs at temperatures as high as 2.3 K. We show that at similar cryogenic temperatures, MoSi SNSPDs achieve efficiencies comparable to WSi-based SNSPDs with nearly a factor of two reduction in jitter.

  18. Improvement of Film Quality in CuInSe2 Thin Films Fabricated by a Non-Vacuum, Nanoparticle-Based Approach

    Science.gov (United States)

    Zhang, Yiwen; Ito, Manabu; Tamura, Tomoaki; Yamada, Akira; Konagai, Makoto

    2011-04-01

    To improve the quality of CuInSe2 (CIS) thin films fabricated by a non-vacuum, nanoparticle-based approach, in this study, two categories of nanoparticles, Cu (InGa) Se2 (CIGS) nanoparticles and copper selenide (Cu-Se) with indium selenide (In-Se) nanoparticles are investigated. It is found that the Cu-Se with In-Se nanoparticles show a higher crystallization velocity than CIGS nanoparticles. The films obtained from Cu-Se with In-Se nanoparticles exhibit higher crystallinity with a larger grain size. Thiourea is applied as a sintering additive during the selenization process. It is clarified that the addition of thiourea is very effective for grain growth and the fabrication of a dense CIS layer. The cell performance is measured under Air Mass 1.5 irradiation. The efficiency of the solar cell, fabricated using Cu-Se, In-Se nanoparticles with thiourea, is 2.15%, higher than that of the solar cell fabricated using CIGS nanoparticles, which is 0.28%.

  19. Nonlinear optical thin films

    Science.gov (United States)

    Leslie, Thomas M.

    1993-01-01

    A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

  20. Fabrication of polyamide thin-film nanocomposite membranes with enhanced surface charge for nitrate ion removal from water resources.

    Science.gov (United States)

    Ghaee, A; Zerafat, M M; Askari, P; Sabbaghi, S; Sadatnia, B

    2017-03-01

    Exclusion due to membrane surface charge is considered as one of the main separation mechanisms occurring in charged membranes, which can be varied through various approaches to affect membrane rejection performance. In this study, thin-film composite (TFC) polyamide (PA) membranes were fabricated via interfacial polymerization of m-phenylenediamine (m-PDA) and 2,4-diaminobenzene sulfonic acid with trimesoyl chloride (TMC) on a polysulfone sub-layer. The ability of the prepared membrane to remove nitrate ions from water resources has been investigated. In order to improve membrane permeability, zeolite-PA thin film nanocomposite (TFN) membranes were fabricated by incorporating natural zeolite nanoparticles obtained through ball milling of an Iranian natural zeolite powder in the interfacial polymerization process. The size, morphology and specific surface area of the as-obtained nanozeolite were characterized using particle size analysis, FE-SEM and BET. The functional groups, morphology and surface charge of the membrane were characterized using ATR-FTIR, SEM and zeta potential analyses. Also, field-emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray spectroscopy (EDS) were used to determine the distribution of nanozeolite in TFN membranes. The influence of zeolite addition to surface roughness was accessed by atomic force microscopy. The performance of TFC and TFN membranes was evaluated in terms of pure water flux and nitrate rejection. The results showed that in case of sulfonated diamine, nitrate ions rejection was enhanced from 63% to 85% which could be attributed to surface charge enhancement. TFN permeability was almost doubled by the addition of nanozeolite.

  1. Fabrication and Characterization of p-Type SnO Thin Film with High c-Axis Preferred Orientation

    Science.gov (United States)

    Pei, Yanli; Liu, Wuguang; Shi, Jingtao; Chen, Zimin; Wang, Gang

    2016-11-01

    p-Type tin monoxide (SnO) thin films with high c-axis preferred orientation have been fabricated on quartz substrate via electron-beam evaporation at 280°C. Subsequently, rapid thermal annealing (RTA) was performed in N2 atmosphere at 400°C to 800°C. Their structural, chemical, optical, and electrical properties were investigated by x-ray diffraction analysis, ultraviolet-visible spectroscopy, scanning electron microscopy, x-ray photoelectron spectroscopy, and Hall-effect measurements. The c-axis-oriented films of Sn-rich SnO presented excellent thermal stability up to RTA at 700°C. Both the crystallization and the hole Hall mobility were enhanced with increasing RTA temperature, with Hall mobility of 16 cm2 V-1 s-1 being obtained after RTA at 700°C. It was considered that the presence of defects and low scattering from grain boundaries contributed to this high Hall mobility. RTA annealing temperature above 700°C induced chemical reaction between SnO and the quartz substrate, with a change of the film to amorphous state with Sn4+ formation.

  2. In situ fabrication of electrochemically grown mesoporous metallic thin films by anodic dissolution in deep eutectic solvents.

    Science.gov (United States)

    Renjith, Anu; Roy, Arun; Lakshminarayanan, V

    2014-07-15

    We describe here a simple electrodeposition process of forming thin films of noble metallic nanoparticles such as Au, Ag and Pd in deep eutectic solvents (DES). The method consists of anodic dissolution of the corresponding metal in DES followed by the deposition on the cathodic surface. The anodic dissolution process in DES overcomes the problems associated with copious hydrogen and oxygen evolution on the electrode surface when carried out in aqueous medium. The proposed method utilizes the inherent abilities of DES to act as a reducing medium while simultaneously stabilizing the nanoparticles that are formed. The mesoporous metal films were characterized by SEM, XRD and electrochemical techniques. Potential applications of these substrates in surface enhanced Raman spectroscopy and electrocatalysis have been investigated. A large enhancement of Raman signal of analyte was achieved on the mesoporous silver substrate after removing all the stabilizer molecules from the surface by calcination. The highly porous texture of the electrodeposited film provides superior electro catalytic performance for hydrogen evolution reaction (HER). The mechanisms of HER on the fabricated substrates were studied by Tafel analysis and electrochemical impedance spectroscopy (EIS). Copyright © 2014 Elsevier Inc. All rights reserved.

  3. Fabrication of highly transparent Al-ion-implanted ZnO thin films by metal vapor vacuum arc method

    Science.gov (United States)

    Lee, Han; Sivashanmugan, Kundan; Kao, Chi-Yuan; Liao, Jiunn-Der

    2017-03-01

    In this study, we utilized the metal vapor vacuum arc technique to implant vaporized aluminum (Al) ions in zinc oxide (ZnO) thin films. By adjusting the ion implantation dose and operational parameters, the conductivity and optical properties of the ZnO thin film can be controlled. The electrical sheet resistance of Al-ion-implanted ZnO decreased from 3.02 × 107 to 3.03 × 104 Ω/sq, while the transparency of the film was mostly preserved (91.5% at a wavelength of 550 nm). The ZnO thin-film Young’s modulus significantly increased with increasing Al ion dose.

  4. Thin film processes II

    CERN Document Server

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  5. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  6. Thin-film Nanofibrous Composite Membranes Containing Cellulose or Chitin Barrier Layers Fabricated by Ionic Liquids

    Energy Technology Data Exchange (ETDEWEB)

    H Ma; B Hsiao; B Chu

    2011-12-31

    The barrier layer of high-flux ultrafiltration (UF) thin-film nanofibrous composite (TFNC) membranes for purification of wastewater (e.g., bilge water) have been prepared by using cellulose, chitin, and a cellulose-chitin blend, regenerated from an ionic liquid. The structures and properties of regenerated cellulose, chitin, and a cellulose-chitin blend were analyzed with thermogravimetric analysis (TGA) and wide-angle X-ray diffraction (WAXD). The surface morphology, pore size and pore size distribution of TFNC membranes were determined by SEM images and molecular weight cut-off (MWCO) methods. An oil/water emulsion, a model of bilge water, was used as the feed solution, and the permeation flux and rejection ratio of the membranes were investigated. TFNC membranes based on the cellulose-chitin blend exhibited 10 times higher permeation flux when compared with a commercial UF membrane (PAN10, Sepro) with a similar rejection ratio after filtration over a time period of up to 100 h, implying the practical feasibility of such membranes for UF applications.

  7. Thin film zinc oxide gas sensor fabricated using near-field electrospray

    Directory of Open Access Journals (Sweden)

    Gaofeng Zheng

    2016-12-01

    Full Text Available Near-field electrospray was used to deposit zinc acetate precursor particles over comb electrodes. These particles were heated and oxidized to form a zinc oxide (ZnO semiconductor at 500 °C. The resulting ZnO thin film on the comb electrode was incorporated into a gas sensor, which was examined using a custom built measurement system. The current that was measured through the electrodes was used to calculate the resistance of the ZnO between the fingers of the comb electrode. The resistance decreased as the sensor was exposed to the target gas of ethanol, while the sensing response (R0/Rg increased at higher concentrations of target gas. The ZnO sensor displayed high sensitivity because of the small diameters and high specific surface area of the electrospray particles. The ZnO sensors show great promise for use as micro/nano gas sensors as they exhibit high sensitivity, repeatability and stability.

  8. Fabrication of Flexible Oriented Magnetic Thin Films with Large in-plane Uniaxial Anisotropy by Roll-to-roll Nanoimprint Lithography

    OpenAIRE

    Thantirige, Rukshan M.; John, Jacob; Pradhan, Nihar R.; Carter, Kenneth R.; Tuominen, Mark T.

    2015-01-01

    Here, we report wafer scale fabrication of densely packed Fe nanostripe-based magnetic thin films on a flexible substrate and their magnetic anisotropy properties. We find that Fe nanostripes exhibit large in-plane uniaxial anisotropy and nearly square hysteresis loops with energy products (BH)max exceeding 3 MGOe at room temperature. High density Fe nanostripes were fabricated on 70 nm flexible polyethylene terephthalate (PET) gratings, which were made by roll-to-roll (R2R) UV nanoimprintlit...

  9. Ultrasonic Substrate Vibration-Assisted Drop Casting (SVADC) for the Fabrication of Photovoltaic Solar Cell Arrays and Thin-Film Devices

    Science.gov (United States)

    Eslamian, Morteza; Zabihi, Fatemeh

    2015-12-01

    A simple, low-cost, versatile, and potentially scalable casting method is proposed for the fabrication of micro- and nano-thin films, herein termed as ultrasonic "substrate vibration-assisted drop casting" (SVADC). The impingement of a solution drop onto a substrate in a simple process called drop casting, usually results in spreading of the liquid solution and the formation of a non-uniform thin solid film after solvent evaporation. Our previous and current supporting results, as well as few similar reports by others, confirm that imposing ultrasonic vibration on the substrate can simply convert the uncontrollable drop casting method into a controllable coating technique. Therefore, the SVADC may be used to fabricate an array of emerging thin-film solar cells, such as polymer, perovskite, and quantum-dot solar cells, as well as other small thin-film devices, in a roll-to-roll and automated fabrication process. The preliminary results demonstrate a ten-fold increase in electrical conductivity of PEDOT: PSS made by SVADC compared with the film made by conventional drop casting. Also, simple planar perovskite solar cells made here using SVADC show promising performance with an efficiency of over 3 % for a simple structure without performing process optimization or using expensive materials and treatments.

  10. Fabrication and characterization of kesterite Cu2ZnSnS4 thin films deposited by electrostatic spray assisted vapour deposition method

    OpenAIRE

    Liu, J. P.; Choy, Kwang-Leong; Placidi, M.; López-García, J.; Saucedo, Edgardo; Colombara, Diego; Robert, Erika

    2014-01-01

    Most of the high efficiency kesterite solar cells are fabricated by vacuum or hydrazine-based solution methods which have drawbacks, such as high cost, high toxicity or explosivity. In our contribution, an alternative non-vacuum and environmental friendly deposition technology called electrostatic spray assisted vapour deposition (ESAVD) has been used for the cost-effective growth of Cu2ZnSnS4 (CZTS) thin films with well controlled structure and composition. CZTS films have been characterized...

  11. Fabrication of Yttria stabilized zirconia thin films on poroussubstrates for fuel cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Leming, Andres [Univ. of California, Berkeley, CA (United States)

    2003-06-16

    A process for the deposition of yttria stabilized zirconia (YSZ) films, on porous substrates, has been developed. These films have possible applications as electrolyte membranes in fuel cells. The films were deposited from colloidal suspensions through the vacuum infiltration technique. Films were deposited on both fully sintered and partially sintered substrates. A critical cracking thickness for the films was identified and strategies are presented to overcome this barrier. Green film density was also examined, and a method for improving green density by changing suspension pH and surfactant was developed. A dependence of film density on film thickness was observed, and materials interactions are suggested as a possible cause. Non-shorted YSZ films were obtained on co-fired substrates, and a cathode supported solid oxide fuel cell was constructed and characterized.

  12. Fabrication and non-covalent modification of highly oriented thin films of a zeolite-like metal-organic framework (ZMOF) with rho topology

    KAUST Repository

    Shekhah, Osama

    2015-01-01

    Here we report the fabrication of the first thin film of a zeolite-like metal-organic framework (ZMOF) with rho topology (rho-ZMOF-1, ([In48(HImDC)96]48-)n) in a highly oriented fashion on a gold-functionalized substrate. The oriented rho-ZMOF-1 film was functionalized by non-covalent modification via post-synthetic exchange of different probe molecules, such as acridine yellow, methylene blue, and Nile red. In addition, encapsulation of a porphyrin moiety was achieved via in situ synthesis and construction of the rho-ZMOF. Adsorption kinetics of volatile organic compounds on rho-ZMOF-1 thin films was also investigated. This study suggests that rho-ZMOF-1 thin films can be regarded as a promising platform for various applications such as sensing and catalysis. This journal is

  13. Post annealing effects on structural, optical and electrical properties of CuSbS2 thin films fabricated by combinatorial thermal evaporation technique

    Science.gov (United States)

    Hussain, Arshad; Ahmed, R.; Ali, N.; Butt, Faheem K.; Shaari, A.; Shamsuri, W. N. Wan; Khenata, R.; Prakash, Deo; Verma, K. D.

    2016-01-01

    Copper antimony sulfide (CuSbS2) thin films were fabricated by combinatorial thermal evaporation technique on well cleaned glass substrates. The deposited thin films were annealed in argon gas atmosphere for 1 h at temperature range of 150-350 °C. The effect of annealing temperature on structural, morphological, optical and electrical properties was studied using the different characterization techniques. The XRD analysis confirmed the crystallinity of the obtained samples with CuSbS2 phase in chalcostibite structure. Optical properties of the deposited samples showed good response in the visible and NIR region, envisaging the potential of CuSbS2 as an efficient solar cell material. The optical band gap of CuSbS2 thin films was measured to be 1.5 eV. A decrease (12.5-1.43 KΩ-cm) was observed for the resistivity of samples with the increase in annealing temperature. The plot of sheet resistance with annealing temperature confirmed the uniformity of samples. These thin films were found as a sustainable substitute material for the absorber layer in conventional thin film solar cell system, because of the abundance and low cost of its constituent elements. This study opens new avenue of research for scalable synthesis of CuSbS2 thin films for solar cell and photovoltaic applications.

  14. Fabrication and characterization of 6,13-bis(triisopropylsilylethynyl)-pentacene active semiconductor thin films prepared by flow-coating method

    Energy Technology Data Exchange (ETDEWEB)

    Mohamad, Khairul Anuar; Rusnan, Fara Naila; Seria, Dzulfahmi Mohd Husin; Saad, Ismail; Alias, Afishah [Nano Engineering & Materials (NEMs) Research Group, Faculty of Engineering Universiti Malaysia Sabah, Kota Kinabalu 88400 Sabah (Malaysia); Katsuhiro, Uesugi; Hisashi, Fukuda [Division of Engineering for Composite Functions, Muroran Institute of Technology 27-1 Mizumoto, Muroran 050-8585 Hokkaido (Japan)

    2015-08-28

    Investigation on the physical characterization and comparison of organic thin film based on a soluble 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene is reported. Oriented thin-films of pentacene have been successfully deposited by flow-coating method, in which the chloroform solution is sandwiched between a transparent substrate and a slide glass, followed by slow-drawing of the substrate with respect to the slide glass. Molecular orientation of flow-coated TIPS-pentacene is comparable to that of the thermal-evaporated pentacene thin film by the X-ray diffraction (XRD) results. XRD results showed that the morphology of flow-coated soluble pentacene is similar to that of the thermal-evaporated pentacene thin films in series of (00l) diffraction peaks where the (001) diffraction peaks are strongest in the nominally out-of-plane intensity and interplanar spacing located at approximately 2θ = 5.33° (d-spacing, d{sub 001} = 16 Å). Following that, ITO/p-TIPS-pentacene/n-ZnO/Au vertical diode was fabricated. The diode exhibited almost linear characteristics at low voltage with nonlinear characteristics at higher voltage which similar to a pn junction behavior. The results indicated that the TIPS-pentacene semiconductor active thin films can be used as a hole injection layer for fabrication of a vertical organic transistor.

  15. Fabrication of Cu2SnS3 thin films by ethanol-ammonium solution process by doctor-blade technique

    Science.gov (United States)

    Wang, Yaguang; Li, Jianmin; Xue, Cong; Zhang, Yan; Jiang, Guoshun; Liu, Weifeng; Zhu, Changfei

    2017-06-01

    In the present study, a low-cost and simple method is applied to fabricate Cu2SnS3 (CTS) thin films. Namely CTS thin films are prepared by a doctor-blade method with a slurry dissolving the Cu2O and SnS powders obtained from CBD reaction solution into ethanol-ammonium solvents. Series of characterization methods including XRD, Raman spectra, SEM and UV-Vis analyses are introduced to investigate the phase structure, morphology and optical properties of CTS thin films. As a result, monoclinic CTS films have been obtained with the disappearance of binary phases CuS and SnS2 while increasing the annealing temperature and time, high quality monoclinic CTS thin films consisting of compact and large grains have been successfully prepared by this ethanol-ammonium method. Moreover, the secondary phase Cu2Sn3S7 is also observed during the annealing process. In addition, the post-annealed CTS film with a band-gap about 0.89 eV shows excellent absorbance between 400 and 1200 nm, which is proper for the bottom layer in multi-junction thin film solar cells. [Figure not available: see fulltext.

  16. Nanostructured thin films and coatings functional properties

    CERN Document Server

    Zhang, Sam

    2010-01-01

    The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e

  17. Fabrication of CdS/CdTe-Based Thin Film Solar Cells Using an Electrochemical Technique

    Directory of Open Access Journals (Sweden)

    I. M. Dharmadasa

    2014-06-01

    Full Text Available Thin film solar cells based on cadmium telluride (CdTe are complex devices which have great potential for achieving high conversion efficiencies. Lack of understanding in materials issues and device physics slows down the rapid progress of these devices. This paper combines relevant results from the literature with new results from a research programme based on electro-plated CdS and CdTe. A wide range of analytical techniques was used to investigate the materials and device structures. It has been experimentally found that n-, i- and p-type CdTe can be grown easily by electroplating. These material layers consist of nano- and micro-rod type or columnar type grains, growing normal to the substrate. Stoichiometric materials exhibit the highest crystallinity and resistivity, and layers grown closer to these conditions show n → p or p → n conversion upon heat treatment. The general trend of CdCl2 treatment is to gradually change the CdTe material’s n-type electrical property towards i-type or p-type conduction. This work also identifies a rapid structural transition of CdTe layer at 385 ± 5 °C and a slow structural transition at higher temperatures when annealed or grown at high temperature. The second transition occurs after 430 °C and requires more work to understand this gradual transition. This work also identifies the existence of two different solar cell configurations for CdS/CdTe which creates a complex situation. Finally, the paper presents the way forward with next generation CdTe-based solar cells utilising low-cost materials in their columnar nature in graded bandgap structures. These devices could absorb UV, visible and IR radiation from the solar spectrum and combine impact ionisation and impurity photovoltaic (PV effect as well as making use of IR photons from the surroundings when fully optimised.

  18. Highly-compliant, microcable neuroelectrodes fabricated from thin-film gold and PDMS.

    Science.gov (United States)

    McClain, Maxine A; Clements, Isaac P; Shafer, Richard H; Bellamkonda, Ravi V; LaPlaca, Michelle C; Allen, Mark G

    2011-04-01

    Bio-electrodes have traditionally been made of materials such as metal and silicon that are much stiffer than the tissue from which they record or stimulate. This difference in mechanical compliance can cause incomplete or ineffective contact with the tissue. The electrode stiffness has also been hypothesized to cause chronic low-grade injury and scar-tissue encapsulation, reducing stimulation and recording efficiency. As an initial step to resolve these issues with electrode performance, we have developed and characterized electrically-functional, low-Young's modulus, microcable-shaped neuroelectrodes and demonstrated electrophysiological recording functionality. The microcable geometry gives the electrodes a similar footprint to traditional wire and microwire neuroelectrodes, while reducing the difference in Young's modulus from nervous tissue by orders of magnitude. The electrodes are composed of PDMS and thin-film gold, affording them a high-level of compliance that is well suited for in vivo applications. The composite Young's modulus of the electrode was experimentally determined to be 1.81 ± 0.01 MPa. By incorporating a high-tear-strength silicone, Sylgard 186, the load at failure was increased by 92%, relative to that of the commonly used Sylgard 184. The microcable electrodes were also electromechanically tested, with measurable conductivity (220 kΩ) at an average 8% strain (n = 2) after the application of 200% strain. Electrophysiological recording is demonstrated by wrapping the electrode around a peripheral nerve, utilizing the compliance and string-like profile of the electrode for effective recording in nerve tissue.

  19. Fabrication and characterization of magnetically tunable metal-semiconductor schottky diode using barium hexaferrite thin film on gold

    Directory of Open Access Journals (Sweden)

    Jotinder Kaur

    2016-05-01

    Full Text Available Barium Hexaferrite (BaM is an extensively studied magnetic material due to its potential device application. In this paper, we study Schottky junction diodes fabricated using gold and BaM and demonstrate the function of a spintronic device. Gold (50 nm/silicon substrate was used to grow the BaM thin films (100-150 nm using pulsed laser deposition. I-V characteristics were measured on the Au/BaM structure sweeping the voltage from ±5 volts. The forward and reverse bias current-voltage curves show diode like rectifying characteristics. The threshold voltage decreases while the output current increases with increase in the applied external magnetic field showing that the I-V characteristics of the BaM based Schottky junction diodes can be tuned by external magnetic field. It is also demonstrated that, the fabricated Schottky diode can be used as a half-wave rectifier, which could operate at high frequencies in the range of 1 MHz compared to the regular p-n junction diodes, which rectify below 10 kHz. In addition, it is found that above 1 MHz, Au/BaM diode can work as a rectifier as well as a capacitor filter, making the average (dc voltage much larger.

  20. Design, fabrication and characterization of a high-sensitivity pressure sensor based on nano-polysilicon thin film transistors

    Directory of Open Access Journals (Sweden)

    Xiaofeng Zhao

    2015-12-01

    Full Text Available Based on the nano-polysilicon thin film transistors (TFTs, a high-sensitivity pressure sensor was designed and fabricated in this paper. The pressure sensing element is composed of a Wheatstone bridge with four nano-polysilicon TFTs designed on different positions of the square silicon diaphragm. Via taking the four channel resistors of the TFTs as piezoresistors, the measurement to the external pressure can be realized according to the piezoresistive effects of channel layer. Through adopting complementary metal oxide semiconductor (CMOS technology and micro-electromechanical system (MEMS technology, the chips of sensor were fabricated on orientation silicon wafer with a high resistivity. At room temperature, when applying a voltage 5.0 V to the Wheatstone bridge, the full scale (100 kPa output voltage and the sensitivity of the sensor with 35 μm-thick silicon diaphragm are 267 mV and 2.58 mV/kPa, respectively. The experimental results show that the pressure sensors can achieve a much higher sensitivity.

  1. Encapsulate-and-peel: fabricating carbon nanotube CMOS integrated circuits in a flexible ultra-thin plastic film

    Science.gov (United States)

    Gao, Pingqi; Zhang, Qing

    2014-02-01

    Fabrication of single-walled carbon nanotube thin film (SWNT-TF) based integrated circuits (ICs) on soft substrates has been challenging due to several processing-related obstacles, such as printed/transferred SWNT-TF pattern and electrode alignment, electrical pad/channel material/dielectric layer flatness, adherence of the circuits onto the soft substrates etc. Here, we report a new approach that circumvents these challenges by encapsulating pre-formed SWNT-TF-ICs on hard substrates into polyimide (PI) and peeling them off to form flexible ICs on a large scale. The flexible SWNT-TF-ICs show promising performance comparable to those circuits formed on hard substrates. The flexible p- and n-type SWNT-TF transistors have an average mobility of around 60 cm2 V-1 s-1, a subthreshold slope as low as 150 mV dec-1, operating gate voltages less than 2 V, on/off ratios larger than 104 and a switching speed of several kilohertz. The post-transfer technique described here is not only a simple and cost-effective pathway to realize scalable flexible ICs, but also a feasible method to fabricate flexible displays, sensors and solar cells etc.

  2. A flexible organic active matrix circuit fabricated using novel organic thin film transistors and organic light-emitting diodes

    KAUST Repository

    Gutiérrez-Heredia, Gerardo

    2010-10-04

    We present an active matrix circuit fabricated on plastic (polyethylene naphthalene, PEN) and glass substrates using organic thin film transistors and organic capacitors to control organic light-emitting diodes (OLEDs). The basic circuit is fabricated using two pentacene-based transistors and a capacitor using a novel aluminum oxide/parylene stack (Al2O3/ parylene) as the dielectric for both the transistor and the capacitor. We report that our circuit can deliver up to 15 μA to each OLED pixel. To achieve 200 cd m-2 of brightness a 10 μA current is needed; therefore, our approach can initially deliver 1.5× the required current to drive a single pixel. In contrast to parylene-only devices, the Al2O 3/parylene stack does not fail after stressing at a field of 1.7 MV cm-1 for >10 000 s, whereas \\'parylene only\\' devices show breakdown at approximately 1000 s. Details of the integration scheme are presented. © 2010 IOP Publishing Ltd.

  3. A flexible organic active matrix circuit fabricated using novel organic thin film transistors and organic light-emitting diodes

    Science.gov (United States)

    Gutiérrez-Heredia, G.; González, L. A.; Alshareef, H. N.; Gnade, B. E.; Quevedo-López, M.

    2010-11-01

    We present an active matrix circuit fabricated on plastic (polyethylene naphthalene, PEN) and glass substrates using organic thin film transistors and organic capacitors to control organic light-emitting diodes (OLEDs). The basic circuit is fabricated using two pentacene-based transistors and a capacitor using a novel aluminum oxide/parylene stack (Al2O3/parylene) as the dielectric for both the transistor and the capacitor. We report that our circuit can deliver up to 15 µA to each OLED pixel. To achieve 200 cd m-2 of brightness a 10 µA current is needed; therefore, our approach can initially deliver 1.5× the required current to drive a single pixel. In contrast to parylene-only devices, the Al2O3/parylene stack does not fail after stressing at a field of 1.7 MV cm-1 for >10 000 s, whereas 'parylene only' devices show breakdown at approximately 1000 s. Details of the integration scheme are presented.

  4. Fabrication and characterization of magnetically tunable metal-semiconductor schottky diode using barium hexaferrite thin film on gold

    Science.gov (United States)

    Kaur, Jotinder; Sharma, Vinay; Sharma, Vipul; Veerakumar, V.; Kuanr, Bijoy K.

    2016-05-01

    Barium Hexaferrite (BaM) is an extensively studied magnetic material due to its potential device application. In this paper, we study Schottky junction diodes fabricated using gold and BaM and demonstrate the function of a spintronic device. Gold (50 nm)/silicon substrate was used to grow the BaM thin films (100-150 nm) using pulsed laser deposition. I-V characteristics were measured on the Au/BaM structure sweeping the voltage from ±5 volts. The forward and reverse bias current-voltage curves show diode like rectifying characteristics. The threshold voltage decreases while the output current increases with increase in the applied external magnetic field showing that the I-V characteristics of the BaM based Schottky junction diodes can be tuned by external magnetic field. It is also demonstrated that, the fabricated Schottky diode can be used as a half-wave rectifier, which could operate at high frequencies in the range of 1 MHz compared to the regular p-n junction diodes, which rectify below 10 kHz. In addition, it is found that above 1 MHz, Au/BaM diode can work as a rectifier as well as a capacitor filter, making the average (dc) voltage much larger.

  5. Polycrystalline thin film cadmium telluride solar cells fabricated by electrodeposition. Annual technical report, 20 March 1995--19 March 1996

    Energy Technology Data Exchange (ETDEWEB)

    Trefny, J U; Mao, D [Colorado School of Mines, Golden, CO (United States)

    1997-04-01

    The objective of this project is to develop improved processes for fabricating CdTe/CdS polycrystalline thin-film solar cells. Researchers used electrodeposition to form CdTe; electrodeposition is a non-vacuum, low-cost technique that is attractive for economic, large-scale production. During the past year, research and development efforts focused on several steps that are most critical to the fabricating high-efficiency CdTe solar cells. These include the optimization of the CdTe electrodeposition process, the effect of pretreatment of CdS substrates, the post-deposition annealing of CdTe, and back-contact formation using Cu-doped ZnTe. Systematic investigations of these processing steps have led to a better understanding and improved performance of the CdTe-based cells. Researchers studied the structural properties of chemical-bath-deposited CdS thin films and their growth mechanisms by investigating CdS samples prepared at different deposition times; investigated the effect of CdCl{sub 2} treatment of CdS films on the photovoltaic performance of CdTe solar cells; studied Cu-doped ZnTe as a promising material for forming stable, low-resistance contacts to the p-type CdTe; and investigated the effect of CdTe and CdS thickness on the photovoltaic performance of the resulting cells. As a result of their systematic investigation and optimization of the processing conditions, researchers improved the efficiency of CdTe/CdS cells using ZnTe back-contact and electrodeposited CdTe. The best CdTe/CdS cell exhibited a V{sub oc} of 0.778 V, a J{sub sc} of 22.4 mA/cm{sup 2}, a FF of 74%, and an efficiency of 12.9% (verified at NREL). In terms of individual parameters, researchers obtained a V{sub oc} over 0.8 V and a FF of 76% on other cells.

  6. Fabrication of graded helical square tower-like Mn sculptured thin films and investigation of their electrical properties: comparison with perturbation theory

    Science.gov (United States)

    Fakharpour, Mahsa; Savaloni, Hadi

    2017-06-01

    Mn sculptured thin films were fabricated in form of graded helical square tower-like terraced sculptured Mn thin films (GHSTTS) using oblique angle deposition together with rotation of substrate about its surface normal with fixed rotation angle (90°) and a shadowing block which was fixed at the centre of the substrate holder. The anisotropy of the samples was examined by resistivity measurements at two orthogonal angles. Direct relationship is obtained between resistivity and the anisotropy of the produced samples which showed that both of these parameters increase with decreasing distance from the edge of the shadowing block. Simulation work using the perturbation theory produced results consistent with the experimental observations.

  7. Ultrasonic Substrate Vibration-Assisted Drop Casting (SVADC) for the Fabrication of Photovoltaic Solar Cell Arrays and Thin-Film Devices

    OpenAIRE

    Eslamian, Morteza; Zabihi, Fatemeh

    2015-01-01

    A simple, low-cost, versatile, and potentially scalable casting method is proposed for the fabrication of micro- and nano-thin films, herein termed as ultrasonic “substrate vibration-assisted drop casting” (SVADC). The impingement of a solution drop onto a substrate in a simple process called drop casting, usually results in spreading of the liquid solution and the formation of a non-uniform thin solid film after solvent evaporation. Our previous and current supporting results, as well as few...

  8. Ultrasonic Substrate Vibration-Assisted Drop Casting (SVADC) for the Fabrication of Photovoltaic Solar Cell Arrays and Thin-Film Devices

    OpenAIRE

    Eslamian, Morteza; Zabihi, Fatemeh

    2015-01-01

    A simple, low-cost, versatile, and potentially scalable casting method is proposed for the fabrication of micro- and nano-thin films, herein termed as ultrasonic “substrate vibration-assisted drop casting” (SVADC). The impingement of a solution drop onto a substrate in a simple process called drop casting, usually results in spreading of the liquid solution and the formation of a non-uniform thin solid film after solvent evaporation. Our previous and current supporting results, as well as few...

  9. Temperature dependent fabrication of cost-effective and nontoxic Cu2ZnSnS4 (CZTS) thin films for solar cell

    Science.gov (United States)

    Digraskar, Renuka; Gattu, Ketan; Sathe, Bhaskar; Ghule, Anil; Sharma, Ramphal

    2016-05-01

    In the present work, Cu2ZnSnS4 (CZTS) thin films have been fabricated onto the glass substrate by simple and economic chemical bath deposition technique1, and the effect of deposition temperature is reported. The deposition temperatures used were 50°C and 60°C for a deposition time of 60 min, which are significantly lower than earlier reports. These CZTS thin films were characterized for optical, electrical, morphological and elemental properties using, UV-Vis spectrophotometer, I-V system for photosensitivity, two probe resistivity system for resistivity, scanning electron microscopy, energy dispersive spectroscopy and Raman spectroscopy.

  10. The surface morphologies of (Pb, Sr) TiO3 thin film fabricated on Si-buffered Pt/Ti/SiO2/Si substrate

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    (Pb, Sr)TiO3 (PST) thin film are fabricated by RF magnetron sputtering on Si-buffered Pt/Ti/SiO2/Si substrates with different buffer layer deposition time. Surface morphologies of the buffer layer indicate an improving surface roughness and larger grains with the prolongation of sputtering time. Deposition of PST thin films shows excellent surface fluctuation filling ability to improve the surface roughness of substrates. PST surface morphologies exhibit apparently different grain forms according to the preparation time durance of buffer layer.

  11. Fabrication of graded helical square tower-like Mn sculptured thin films and investigation of their electrical properties: comparison with perturbation theory

    Science.gov (United States)

    Fakharpour, Mahsa; Savaloni, Hadi

    2017-02-01

    Mn sculptured thin films were fabricated in form of graded helical square tower-like terraced sculptured Mn thin films (GHSTTS) using oblique angle deposition together with rotation of substrate about its surface normal with fixed rotation angle (90°) and a shadowing block which was fixed at the centre of the substrate holder. The anisotropy of the samples was examined by resistivity measurements at two orthogonal angles. Direct relationship is obtained between resistivity and the anisotropy of the produced samples which showed that both of these parameters increase with decreasing distance from the edge of the shadowing block. Simulation work using the perturbation theory produced results consistent with the experimental observations.

  12. Laser printed organic semiconductor PQT-12 for bottom-gate organic thin-film transistors: Fabrication and characterization

    Science.gov (United States)

    Makrygianni, M.; Ainsebaa, A.; Nagel, M.; Sanaur, S.; Raptis, Y. S.; Zergioti, I.; Tsamakis, D.

    2016-12-01

    In this work, we report on the effect of laser printed Poly (3,3‴-didodecyl quarter thiophene) on its optical, structural and electrical properties for bottom-gate/bottom-contact organic thin-film transistors applications. This semiconducting π-conjugated polymer was solution-deposited (spin-coated) on a donor substrate and transferred by means of solid phase laser-induced forward transfer (LIFT) technique on SiO2/Si receiver substrates to form the active material. This article presents a detailed study of the electrical properties of the fabricated transistors by measuring the parasitic resistances for gold (Au) and platinum (Pt) as source-drain electrodes, for optimizing OTFTs in terms of contacts. In addition, X-ray diffraction patterns revealed that it is possible to control the polymer microstructure through the choice of solvent. Also, no significant change in polymer chain orientation was observed between two printed patterns at 90 and 130 mJ/cm2 as confirmed by Raman spectra. The results demonstrate hole mobility values of (2.6 ± 1.3) × 10-2 cm2/Vs, and lower parasitic resistance for dielectric surface roughness around 1.2 nm and Pt electrodes. Higher performances are correlated to i) the well-ordering of PQT-12 surface when a high-boiling-point solvent is used and ii) the less limitating Pt source/drain electrodes. This analytical study proves that solid phase LIFT printing is a reliable technology for the fabrication of thin, organic large area electronics in a well-defined manner.

  13. Fabrication and characterization methods for growth of CZTS as a promising material for thin film solar cells

    Science.gov (United States)

    Emrani, Amin

    Current research trends are moving towards earth-abundant and low toxicity materials. Cu2ZnSnS4 (CZTS), which consists not only earth-abundant and non-toxic elemental constituents, but also possesses a nearly optimum band gap of 1.5 eV and a high absorption coefficient, has the potential to be a leading material for large scale generation of solar energy. Although theoretical calculations estimated the feasibility of achieving an efficiency between 30 to 40 %, for CZTS solar cells, unfortunately, there is no standard approach to fabricate CZTS cells to reach an efficiency even close to these numbers. In this dissertation, several potential methods from vacuum based techniques such as sputtering to a new solution-based process to deposit CZTS films have been explored, studied and developed. To further improve the CZTS solar cell performance, other layers essential for CZTS solar cells have also been analyzed and optimized. Lastly, the performance and efficiencies of the final integrated cells are presented. First, we report a two-step process with sputtering of elemental precursors followed by sulfurization in dilute H2S. Structural and optical properties of CZTS thin films at various temperatures are studied. The CZTS films formed at 550°C exhibited a compact void-free structure yields the highest efficiency of 5.75%. Since long duration annealing processes are not practical for industry and result in the formation of voids due to the sublimation of secondary phases, fast annealing under sulfur vapor atmosphere has further been investigated. Since the H2S annealing is cleaner and more controllable than dealing with sulfur vapor pressure. We report a two-step process with sputtering of elemental precursors followed by fast sulfurization in dilute H2S. The electrical characteristics and the efficiencies of the respective solar cells were analyzed and compared. The films annealed at 580°C for 30 minutes exhibited the highest efficiency of 3.8%. Another approach to

  14. Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate

    OpenAIRE

    Wei, Xianqi; Zhao, Ranran; Shao, Minghui; Xu, Xijin; Huang, Jinzhao

    2013-01-01

    Zinc oxide thin films have been obtained on bare and GaN buffer layer decorated Si (111) substrates by pulsed laser deposition (PLD), respectively. GaN buffer layer was achieved by a two-step method. The structure, surface morphology, composition, and optical properties of these thin films were investigated by X-ray diffraction, field emission scanning electron microscopy, infrared absorption spectra, and photoluminiscence (PL) spectra, respectively. Scanning electron microscopy images indica...

  15. Fabrication of graphene-nanoflake/poly(4-vinylphenol) polymer nanocomposite thin film by electrohydrodynamic atomization and its application as flexible resistive switching device

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Kyung Hyun; Ali, Junaid [Department of Mechatronics Engineering, Jeju National University, Jeju 690-756 (Korea, Republic of); Na, Kyoung-Hoan, E-mail: khna@dankook.ac.kr [College of Engineering, Dankook University, Yongin-si, Gyeonggi-do 448-701 (Korea, Republic of)

    2015-10-15

    This paper describes synthesis of graphene/poly(4-vinylphenol) (PVP) nanocomposite and deposition of thin film by electrohydrodynamic atomization (EHDA) for fabrication flexible resistive switching device. EHDA technique proved its viability for thin film deposition after surface morphology analyses by field emission scanning electron microscope (FESEM) and non-destructive 3D Nano-profilometry, as the deposited films were, devoid of abnormalities. The commercially available graphene micro-flakes were exfoliated and broken down to ultra-small (20 nm–200 nm) nano-flakes by ultra-sonication in presence of N-methyl-pyrrolidone (NMP). These graphene nanoflakes with PVP nanocomposite, were successfully deposited as thin films (thickness ~140±7 nm, R{sub a}=2.59 nm) on indium–tin-oxide (ITO) coated polyethylene terephthalate (PET) substrate. Transmittance data revealed that thin films are up to ~87% transparent in visible and NIR region. Resistive switching behaviour of graphene/PVP nanocomposite thin film was studied by using the nanocomposite as active layer in Ag/active layer/ITO sandwich structure. The resistive switching devices thus fabricated, showed characteristic OFF to ON (high resistance to low resistance) transition at low voltages, when operated between ±3 V, characterized at 10 nA compliance currents. The devices fabricated by this approach exhibited a stable room temperature, low power current–voltage hysteresis and well over 1 h retentivity, and R{sub OFF}/R{sub ON}≈35:1. The device showed stable flexibility up to a minimum bending diameter of 1.8 cm.

  16. Fabrication of ZnO Thin Films by Sol-Gel Spin Coating and Their UV and White-Light Emission Properties

    Science.gov (United States)

    Kumar, Mirgender; Dubey, Sarvesh; Rajendar, Vanga; Park, Si-Hyun

    2017-10-01

    ZnO thin films have been fabricated by the sol-gel spin-coating technique and annealed under different conditions, and their ultraviolet (UV) and white-light emission properties investigated. Different ambient conditions including oxygen, nitrogen, zinc-rich nitrogen, and vacuum were used to tune the main properties of the ZnO thin films. The resistivity varied from the conductive to semi-insulating regime, and the luminescence emission from fairly intense UV to polychromatic. The emission intensity was also found to be a function of the annealing conditions. Possible routes to compensate the loss of emission characteristics are discussed. X-ray photoelectron spectroscopy (XPS) analysis was carried out to detect the chemical states of the zinc/oxygen species. The changes in the electrical and emission properties are explained based on annihilation/formation of inherent donor/acceptor-type defects. Such ZnO thin films could have potential applications in solid-state lighting.

  17. Fabrication of Thin Films of α-Fe2O3 via Atomic Layer Deposition Using Iron Bisamidinate and Water under Mild Growth Conditions.

    Science.gov (United States)

    Avila, Jason R; Kim, Dong Wook; Rimoldi, Martino; Farha, Omar K; Hupp, Joseph T

    2015-08-01

    Atomic layer deposition (ALD) has been shown to be an excellent method for depositing thin films of iron oxide. With limited iron precursors available, the methods widely used require harsh conditions such as high temperatures and/or the use of oxidants such as ozone or peroxide. This letter aims to show that bis(N,N'-di-t-butylacetamidinato) iron(II) (iron bisamidinate or FeAMD) is an ideal ALD precursor because of its reactivity with water and relative volatility. Using in situ QCM analysis, we show outstanding conformal self-limiting growth of FeOx using FeAMD and water at temperatures lower than 200 °C. By annealing thin films of FeOx at 500 °C, we observe the formation of α-Fe2O3, confirming that we can use FeAMD to fabricate thin films of catalytically promising iron oxide materials using moderate growth conditions.

  18. Fabrication of thin film CZTS solar cells with Pulsed Laser Deposition

    OpenAIRE

    Cazzaniga, Andrea Carlo; Schou, Jørgen; Pryds, Nini; Petersen, Paul Michael

    2016-01-01

    This project was about making CZTS solar cells using PLD for the fabrication of the absorber layer, and using standard techniques for the rest of the device. The solar cell is a very complicated device and all the steps in the fabrication are very important. It doesn't matter if PLD brings the best absorber layer, if one has a poor device processing the outcome will be disastrous. The converse holds true exactly in the same way. Developing the device-fabrication takes time, trials and errors....

  19. Thin film heat flux sensors fabricated on copper substrates for thermal measurements in microfluidic environments

    Science.gov (United States)

    Jasperson, Benjamin A.; Schmale, Joshua; Qu, Weilin; Pfefferkorn, Frank E.; Turner, Kevin T.

    2014-12-01

    Micro-scale heat flux sensors are fabricated on bulk copper surfaces using a combination of lithography-based microfabrication and micro end milling. The heat flux sensors are designed to enable heat transfer measurements on an individual pin in a copper micro pin fin heat sink. Direct fabrication of the sensors on copper substrates minimizes the thermal resistance between the sensor and pin. To fabricate the devices, copper wafers were polished to a flatness and roughness suitable for microfabrication and standard processes, including photolithography, polyimide deposition via spinning, and metal deposition through physical vapor deposition were tailored for use on the unique copper substrates. Micro end milling was then used to create 3D pin features and segment the devices from the copper substrate. Temperature calibrations of the sensors were performed using a tube furnace and the heat flux sensing performance was assessed through laser-based tests. This paper describes the design, fabrication and calibration of these integrated heat flux sensors.

  20. Fabrication of Titanium Dioxide Thin Films by DBD-CVD Under Atmosphere

    Institute of Scientific and Technical Information of China (English)

    ZHANG Xi-wen; GUO Yu; HAN Gao-rong

    2007-01-01

    Titanium dioxide films were firstly deposited on glass substrate by DBD-CVD (dielectric barrier discharge enhanced chemical vapor deposition) technique.The structure of the films was investigated by X-ray diffraction (XRD),scanning electron microscopy (SEM).TiO2 films deposited under atmosphere pressure show preferred orientation,and exhibit columnar-like structure,while TiO2 films deposited under low gas pressure show no preferred orientation.The columnar-like structure with preferred orientation exhibits higher photocatalytic efficiency,since the columnar structure has larger surface area.However,it contributes little to the improvement of hydrophilicity. DBD-CVD is an alternative method to prepare photocatalytic TiO2 for its well-controllable property.

  1. Magnetic Properties of Nanometer-Scale NiZnCu Ferrite Thin Films Fabricated by Spray-Spin-Heating-Coating Method

    Institute of Scientific and Technical Information of China (English)

    Yulan JING; Huaiwu ZHANG; lijun JIA; Yu SHI; Yingli LIU

    2004-01-01

    A new nanometer-scale ferrite thin film with excellent high-frequency characteristics has been developed by the spray-spin-heating-coating method. The effects of the ion synthesis mechanism, chemical stoichiometry, fabrication method, and doping content on the magnetic properties and microstructure of the thin films have been analyzed.The films formed between 75℃ and 90℃ by spray-spin-heating-coating methods was discovered with fine grain size of about 21 nm, high saturation magnetization (4πMs) of about 6.5 kGs, coercivity of about 9.8 Oe, as well as initial permeability of about 14.0. These films can be widely used in radio-frequency integrated circuit devices.

  2. A rapid process of Yba2Cu3O7-δ thin film fabrication using trifluoroacetate metal-organic deposition with polyethylene glycol additive

    DEFF Research Database (Denmark)

    Wu, Wei; Feng, Feng; Shi, Kai

    2013-01-01

    and oxygenation processes, mass percentage and molecular weight of PEG additive, YBCO thin films with Jc of about 4.5 MA cm-2 (77 K, self-field) could be routinely fabricated using (20-30) wt% PEG(1000-2000) additive with a total treatment time of about 2 h including the 15 min pyrolysis process time. The effects......Trifluoroacetate metal-organic deposition (TFA-MOD) is a promising technique to fabricate YBa2Cu3O7-δ (YBCO) superconducting films. However, its slow pyrolysis process, which usually takes more than 10 h, constitutes a barrier for industrial production. In this study, polyethylene glycol (PEG......) was utilized to reduce the stress generation inside the coated films when the strong pyrolysis reactions happen. With the addition of 30 wt% PEG2000 to the precursor solution, a smooth film surface could be obtained through a rapid pyrolysis process of 15 min. After the optimizations of the crystallization...

  3. Incorporation of N-doped TiO2 nanorods in regenerated cellulose thin films fabricated from recycled newspaper as a green portable photocatalyst.

    Science.gov (United States)

    Mohamed, Mohamad Azuwa; Salleh, W N W; Jaafar, Juhana; Ismail, A F; Abd Mutalib, Muhazri; Jamil, Siti Munira

    2015-11-20

    In this work, an environmental friendly RC/N-TiO2 nanocomposite thin film was designed as a green portable photocatalyst by utilizing recycled newspaper as sustainable cellulose resource. Investigations on the influence of N-doped TiO2 nanorods incorporation on the structural and morphological properties of RC/N-TiO2 nanocomposite thin film are presented. The resulting nanocomposite thin film was characterized by FESEM, AFM, FTIR, UV-vis-NIR spectroscopy, and XPS analysis. The results suggested that there was a remarkable compatibility between cellulose and N-doped TiO2 nanorods anchored onto the surface of the RC/N-TiO2 nanocomposite thin film. Under UV and visible irradiation, the RC/N-TiO2 nanocomposite thin film showed remarkable photocatalytic activity for the degradation of methylene blue solution with degradation percentage of 96% and 78.8%, respectively. It is crucial to note that the resulting portable photocatalyst produced via an environmental and green technique in its fabrication process has good potential in the field of water and wastewater treatment application. Copyright © 2015 Elsevier Ltd. All rights reserved.

  4. Photocatalytic Graphene-TiO2 Thin Films Fabricated by Low-Temperature Ultrasonic Vibration-Assisted Spin and Spray Coating in a Sol-Gel Process

    Directory of Open Access Journals (Sweden)

    Fatemeh Zabihi

    2017-05-01

    Full Text Available In this work, we communicate a facile and low temperature synthesis process for the fabrication of graphene-TiO2 photocatalytic composite thin films. A sol-gel chemical route is used to synthesize TiO2 from the precursor solutions and spin and spray coating are used to deposit the films. Excitation of the wet films during the casting process by ultrasonic vibration favorably influences both the sol-gel route and the deposition process, through the following mechanisms. The ultrasound energy imparted to the wet film breaks down the physical bonds of the gel phase. As a result, only a low-temperature post annealing process is required to eliminate the residues to complete the conversion of precursors to TiO2. In addition, ultrasonic vibration creates a nanoscale agitating motion or microstreaming in the liquid film that facilitates mixing of TiO2 and graphene nanosheets. The films made based on the above-mentioned ultrasonic vibration-assisted method and annealed at 150 °C contain both rutile and anatase phases of TiO2, which is the most favorable configuration for photocatalytic applications. The photoinduced and photocatalytic experiments demonstrate effective photocurrent generation and elimination of pollutants by graphene-TiO2 composite thin films fabricated via scalable spray coating and mild temperature processing, the results of which are comparable with those made using lab-scale and energy-intensive processes.

  5. Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Bo-Heng [Instrument Technology Research Center, National Applied Research Laboratories, Taiwan (China); Huang, Hung Ji, E-mail: hjhuang@itrc.narl.org.tw [Instrument Technology Research Center, National Applied Research Laboratories, Taiwan (China); Huang, Sheng-Hsin [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Hsiao, Chien-Nan [Instrument Technology Research Center, National Applied Research Laboratories, Taiwan (China)

    2014-09-01

    The inductively coupled plasma-enhanced atomic layer deposition (PEALD) method was used to fabricate ultrathin and smooth Pt thin films at low temperatures without the use of a Pt seed layer. The Pt thin metal films deposited at 200 °C onto Si and glass substrates exhibited high conductivities (< 12 μΩ cm for films with a thickness greater than 8 nm) and thermal stabilities resembling those of the bulk material. The measured density of the deposited Pt thin films was 20.7 ± 6 g/cm{sup 3}. X-ray photoelectron spectra of the films showed clear 4f peaks (74.3 eV (4f{sub 5/2}) and 71.1 eV (4f{sub 7/2})), and X-ray diffraction measurements showed the (111) peak of the fcc structure. The deposited Pt layers were in crystal form. The 25.5-nm Pt films coated onto 170-nm-wide trench structures (aspect ratio of 3.5:1) exhibited good step coverage. The PEALD-deposited Pt thin films were chemically stable under high-temperature light illumination and could serve as catalysts under strongly alkaline conditions (pH = 12) during the long-term oxidization of ammonium ions. - Highlights: • Inductively coupled plasma applied to enhance atomic layer deposition (PEALD) • Smooth Pt films fabricated by PEALD at low temperature • 8-nm Pt shows clear metal peaks in XPS and XRD. • 8-nm Pt shows low electrical resistivity of 16 μΩ cm. • 8-nm Pt shows stability under strong light and pH = 12 wash by NH{sub 4}{sup +}/NaOH solution.

  6. Fabrication of Lead-Free Bi0.5Na0.5TiO3 Thin Films by Aqueous Chemical Solution Deposition

    Directory of Open Access Journals (Sweden)

    Mads Christensen

    2017-02-01

    Full Text Available Piezoelectric ceramics are widely used in actuator applications, and currently the vast majority of these devices are based on Pb ( Zr , Ti O 3 , which constitutes environmental and health hazards due to the toxicity of lead. One of the most promising lead-free material systems for actuators is based on Bi 0 . 5 Na 0 . 5 TiO 3 (BNT, and here we report on successful fabrication of BNT thin films by aqueous chemical solution deposition. The precursor solution used in the synthesis is based on bismuth citrate stabilized by ethanolamine, NaOH , and a Ti-citrate prepared from titanium tetraisopropoxide and citric acid. BNT thin films were deposited on SrTiO 3 and platinized silicon substrates by spin-coating, and the films were pyrolized and annealed by rapid thermal processing. The BNT perovskite phase formed after calcination at 500 °C in air. The deposited thin films were single phase according to X-ray diffraction, and the microstructures of the films shown by electron microscopy were homogeneous and dense. Decomposition of the gel was thoroughly investigated, and the conditions resulting in phase pure materials were identified. This new aqueous deposition route is low cost, robust, and suitable for development of BNT based thin film for actuator applications.

  7. Ceramic Composite Thin Films

    Science.gov (United States)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  8. Fabrication of high infrared reflective Al-doped ZnO thin films through electropulsing treatment for solar control

    Energy Technology Data Exchange (ETDEWEB)

    Miao, Dagang, E-mail: chinesemdg@163.com; Hu, Huawen; Gan, Lu

    2015-08-05

    Highlights: • Rapid electropulsing treatment (EPT) was applied on AZO thin films. • AZO film presented electrical resistivity of 9.03 × 10{sup −4} Ω cm after 4.5 min of EPT. • AZO film presented high infrared reflection rate of 80–85% after 4.5 min of EPT. • The prepared AZO film can be used as solar control film. - Abstract: In this study, Al-doped ZnO (AZO) thin films were finished by low-energy consumed electropulsing treatment (EPT) in a short time. The EPT effect on the resulting AZO films was investigated by X-ray Diffraction (XRD), Hall Effect measurement, UV–visible transmittance spectra, Scanning Electron Microscope (SEM), Atomic Force Microscopy (AFM) and Fourier Transform Infrared Spectroscopy. As compared with the other EPT-treated AZO films, the prepared AZO films corresponding to 4.5 min EPT exhibited higher degree of crystallization, higher visible transmittance with blue shift, smoother surface, lower electrical resistivity of 9.03 × 10{sup −4} Ω cm, and higher infrared reflection rate of 80–85%. By the 4.5 min of EPT, the electrical conductivity of the resulting AZO thin film was increased by approximately 82.3%. Moreover, it was also found that prolonged EPT would degrade the film properties. These results indicate that the fast and low-energy consumed EPT might be a promising substitution for traditional heat annealing, and the prepared high infrared reflective AZO films make them promising candidates for being applied as solar control films.

  9. Fabrication of capacitive absolute pressure sensors by thin film vacuum encapsulation on SOI substrates

    Science.gov (United States)

    Belsito, Luca; Mancarella, Fulvio; Roncaglia, Alberto

    2016-09-01

    The paper reports on the fabrication and characterization of absolute capacitive pressure sensors fabricated by polysilicon low-pressure chemical vapour deposition vacuum packaging on silicon-on-insulator substrates. The fabrication process proposed is carried out at wafer level and allows obtaining a large number of miniaturized sensors per substrate on 1  ×  2 mm2 chips with high yield. The sensors present average pressure sensitivity of 8.3 pF/bar and average pressure resolution limit of 0.24 mbar within the measurement range 200-1200 mbar. The temperature drift of the sensor prototypes was also measured in the temperature range 25-45 °C, yielding an average temperature sensitivity of 67 fF K-1 at ambient pressure.

  10. High performance thin film transistor (flex-TFT) with textured nanostructure ZnO film channel fabricated by exploiting electric double layer gate insulator

    Science.gov (United States)

    Ghimire, Rishi Ram; Raychaudhuri, A. K.

    2017-01-01

    We report a flexible thin film transistor (flex-TFT) fabricated on a commonly available polyimide (Kapton®) tape with a channel of highly textured nanocrystalline ZnO film grown by pulsed laser deposition. The flex-TFT with an electric double layer (EDL) gate insulator shows a low threshold for operation (Vth ≤ 1 V), an ON/OFF ratio reaching ≈107 and a subthreshold swing ≈75 mV/dec. The superior performance is enabled by a high saturation mobility (μs ≈ 70 cm2/V s) of the highly textured nanocrystalline channel. The low Vth arises from large charge density (≈1014/cm2) induced into the channel by EDL gate insulator. The large charge density induced by the EDL gate dielectric also enhances the Hall mobility in the film and brings down the sheet resistance by nearly 2 orders, which leads to large ON/OFF ratio. The flex-TFT operation can be sustained with reproducibility when the TFT is bent down to a radius of curvature ≈2 cm.

  11. Thermo-Optical Properties of Thin-Film TiO2–Al2O3 Bilayers Fabricated by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Rizwan Ali

    2015-05-01

    Full Text Available We investigate the optical and thermo-optical properties of amorphous TiO\\(_2\\–Al\\(_2\\O\\(_3\\ thin-film bilayers fabricated by atomic layer deposition (ALD. Seven samples of TiO\\(_2\\–Al\\(_2\\O\\(_3\\ bilayers are fabricated by growing Al\\(_2\\O\\(_3\\ films of different thicknesses on the surface of TiO\\(_2\\ films of constant thickness (100 nm. Temperature-induced changes in the optical refractive indices of these thin-film bilayers are measured by a variable angle spectroscopic ellipsometer VASE\\textsuperscript{\\textregistered}. The optical data and the thermo-optic coefficients of the films are retrieved and calculated by applying the Cauchy model and the linear fitting regression algorithm, in order to evaluate the surface porosity model of TiO\\(_2\\ films. The effects of TiO\\(_2\\ surface defects on the films' thermo-optic properties are reduced and modified by depositing ultra-thin ALD-Al\\(_2\\O\\(_3\\ diffusion barrier layers. Increasing the ALD-Al\\(_2\\O\\(_3\\ thickness from 20 nm to 30 nm results in a sign change of the thermo-optic coefficient of the ALD-TiO\\(_2\\. The thermo-optic coefficients of the 100 nm-thick ALD-TiO\\(_2\\ film and 30 nm-thick ALD-Al\\(_2\\O\\(_3\\ film in a bilayer are (0.048 \\(\\pm\\ 0.134 \\(\\times 10 ^{-4} {^\\circ}\\mathrm {C}^{-1}\\ and (0.680 \\(\\pm\\ 0.313 \\(\\times 10^{-4} {^\\circ} \\mathrm {C}^{-1}\\, respectively, at a temperature \\(T = 62 ^\\circ \\mathrm{C}\\.

  12. Oxide Semiconductor-Based Flexible Organic/Inorganic Hybrid Thin-Film Transistors Fabricated on Polydimethylsiloxane Elastomer.

    Science.gov (United States)

    Jung, Soon-Won; Choi, Jeong-Seon; Park, Jung Ho; Koo, Jae Bon; Park, Chan Woo; Na, Bock Soon; Oh, Ji-Young; Lim, Sang Chul; Lee, Sang Seok; Chu, Hye Yong

    2016-03-01

    We demonstrate flexible organic/inorganic hybrid thin-film transistors (TFTs) on a polydimethysilox- ane (PDMS) elastomer substrate. The active channel and gate insulator of the hybrid TFT are composed of In-Ga-Zn-O (IGZO) and blends of poly(vinylidene fluoride-trifluoroethylene) [P(VDF- TrFE)] with poly(methyl methacrylate) (PMMA), respectively. It has been confirmed that the fabri- cated TFT display excellent characteristics: the recorded field-effect mobility, sub-threshold voltage swing, and I(on)/I(off) ratio were approximately 0.35 cm2 V(-1) s(-1), 1.5 V/decade, and 10(4), respectively. These characteristics did not experience any degradation at a bending radius of 15 mm. These results correspond to the first demonstration of a hybrid-type TFT using an organic gate insulator/oxide semiconducting active channel structure fabricated on PDMS elastomer, and demonstrate the feasibility of a promising device in a flexible electronic system.

  13. In-situ fabrication of Y-Ba-Cu oxide thin films by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bowman, R.M.; Ferguson, A.L.; Pegrum, C.M. (Strathclyde Univ., Glasgow (United Kingdom). Dept. of Applied Physics)

    1991-03-01

    This paper reports the in-situ deposition of laser-ablated YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} films on MgO substrates, using the third and second harmonics of a Nd-YAG laser. The authors investigate the conditions needed during post-deposition oxygenation to produce the best films. The authors highly-oriented samples are made using the third harmonic (wavelength {lambda} = 355 nm) on {l angle}100{r angle} MgO and have a transition temperature T{sub c} of 85K, a critical current density J{sub c} of 1.5 {times} 10{sup 5} A/cm{sup 2} at 4.2 K. Films made with the second harmonic on MgO are, as expected, markedly poorer in quality. Highly-oriented films have also been made on {l angle}110{r angle} and {l angle}100{r angle} SrTiO{sub 3} with {lambda} = 355 nm.

  14. Polyimide Aerogel Thin Films

    Science.gov (United States)

    Meador, Mary Ann; Guo, Haiquan

    2012-01-01

    Polyimide aerogels have been crosslinked through multifunctional amines. This invention builds on "Polyimide Aerogels With Three-Dimensional Cross-Linked Structure," and may be considered as a continuation of that invention, which results in a polyimide aerogel with a flexible, formable form. Gels formed from polyamic acid solutions, end-capped with anhydrides, and cross-linked with the multifunctional amines, are chemically imidized and dried using supercritical CO2 extraction to give aerogels having density around 0.1 to 0.3 g/cubic cm. The aerogels are 80 to 95% porous, and have high surface areas (200 to 600 sq m/g) and low thermal conductivity (as low as 14 mW/m-K at room temperature). Notably, the cross-linked polyimide aerogels have higher modulus than polymer-reinforced silica aerogels of similar density, and can be fabricated as both monoliths and thin films.

  15. Facile fabrication of stable r-GO/Pd-TiO2/r-GO thin film and its photoactivity under visible light

    Science.gov (United States)

    Quang Dao, Anh; Tuyen Le Thi, Thanh; Asif, Muhammad; Dong, Shuang; Fu, Chaoyang; Liu, Hongfang

    2015-08-01

    In this work, reduced graphene oxide (r-GO) sandwiched Pd-TiO2 thin films were fabricated in the form of moon pie on silica glass slices using a low-cost sol-gel facile coating method and their photocatalytic activity was studied using the degradation of methylene blue dye. The thin film was characterized using various techniques such as x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and transmission electron microscopy, which revealed an average film thickness of 170 nm and an average crystallite size of 15 nm for Pd-TiO2 wrapped in r-GO layers. The stability and strength of the thin films was enhanced using graphene, preventing the breakage of the thin film during calcination and also the oxidation of the Pd-TiO2 thin film during chemical reactions. The r-GO sandwiched Pd-TiO2 thin film showed excellent activity in the photochemical degradation of methylene blue dye, and retained its activity and stability for ten cycles of recycling. The activity of the r-GO/Pd-TiO2/r-GO was greater than 1.4 × 10-5 g (min × m2)-1 in all of the experiments compared to the bare Pd-TiO2 which dropped markedly to less than 0.60 × 10-5 g (min × m2)-1 after the second run. This study can be considered as simple, environmentally friendly and cost effective methods for the treatment of wastewater.

  16. Cu2ZnSnSe4 thin-film solar cells fabricated using Cu2SnSe3 and ZnSe bilayers

    Science.gov (United States)

    Kim, Kang Min; Liao, Kuang Hsiang; Tampo, Hitoshi; Shibata, Hajime; Niki, Shigeru

    2015-04-01

    Evaporated Cu2SnSe3 (CTSe) and ZnSe bilayers are used as precursors for the fabrication of Cu2ZnSnSe4 (CZTSe) thin films. Large grains (i.e., >1 µm) in CZTSe were obtained at a relatively low annealing temperature of 500 °C. The stacking order of precursors strongly affected the chemical composition of CZTSe thin films even under identical growth conditions. Zn loss in CTSe/ZnSe/Mo precursors occurred during CTSe deposition, whereas ZnSe/CTSe/Mo precursors showed improved stability in composition. The CZTSe solar cells fabricated using ZnSe/CTSe bilayer precursors with annealing showed a conversion efficiency of over 7%.

  17. Antifouling Transparent ZnO Thin Films Fabricated by Atmospheric Pressure Cold Plasma Deposition

    Science.gov (United States)

    Suzaki, Yoshifumi; Du, Jinlong; Yuji, Toshifumi; Miyagawa, Hayato; Ogawa, Kazufumi

    2015-09-01

    One problem with outdoor-mounted solar panels is that power generation efficiency is reduced by face plate dirt; a problem with electronic touch panels is the deterioration of screen visibility caused by finger grease stains. To solve these problems, we should fabricate antifouling surfaces which have superhydrophobic and oil-repellent properties without spoiling the transparency of the transparent substrate. In this study, an antifouling surface with both superhydrophobicity and oil-repellency was fabricated on a glass substrate by forming a fractal microstructure. The fractal microstructure was constituted of transparent silica particles 100 nm in diameter and transparent zinc-oxide columns grown on silica particles through atmospheric pressure cold plasma deposition; the sample surface was coated with a chemically adsorbed monomolecular layer. Samples were obtained which had a superhydrophobic property (with a water droplet contact angle of more than 150°) and a high average transmittance of about 90% (with wavelengths ranging from 400 nm to 780 nm).

  18. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  19. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  20. Investigations on Tl-2223 thin films fabricated through ultrasonic spray pyrolysis under oxygen deficient conditions

    Indian Academy of Sciences (India)

    H K Singh; O N Srivastava

    2000-12-01

    In this paper we have shown that polycrystalline films corresponding to Tl-2223 phase can be grown by employing high thalliation temperatures and short thalliation times. Ultrasonically deposited precursor films corresponding to Ba2Ca2.2Cu3.3O(Ag) have been thalliated under high vacuum (∼ 10–5 torr) at 890°C to obtain single phase Tl-2223 films. An off-stoichiometric and unreacted pellet of composition Tl2.05Ba2Ca2Cu3O has been used as source of Tl. We have shown that oxygen ambient is not necessary for the growth of Tl-2223 phase. The as-thalliated films have ’s in the range 123 K ± 0.70 K. The has been found to be independent of the addition of AgNO3 to the precursor. The zero field transport has been observed to be > 1.2 × 105 A/cm2 at 77 K. Near (110 K–122 K), has been observed to follow the power law ∝ (1 – /) , ≈ 2. A power law with ≈ 1.4 has been observed for the temperature range 70 K–110 K. An optimum doping of Ag has been observed to induce about 25% increase in and it also leads to uniform and enlarged grain growth. The surface morphology of Ag free samples contains plate like grains having arbitrary shapes. In contrast to this 0.35 Ag doped sample exhibits nearly rectangular plate like grains.

  1. Direct fabrication of graphene on SiO2 enabled by thin film stress engineering.

    Science.gov (United States)

    McNerny, Daniel Q; Viswanath, B; Copic, Davor; Laye, Fabrice R; Prohoda, Christophor; Brieland-Shoultz, Anna C; Polsen, Erik S; Dee, Nicholas T; Veerasamy, Vijayen S; Hart, A John

    2014-05-23

    We demonstrate direct production of graphene on SiO2 by CVD growth of graphene at the interface between a Ni film and the SiO2 substrate, followed by dry mechanical delamination of the Ni using adhesive tape. This result is enabled by understanding of the competition between stress evolution and microstructure development upon annealing of the Ni prior to the graphene growth step. When the Ni film remains adherent after graphene growth, the balance between residual stress and adhesion governs the ability to mechanically remove the Ni after the CVD process. In this study the graphene on SiO2 comprises micron-scale domains, ranging from monolayer to multilayer. The graphene has >90% coverage across centimeter-scale dimensions, limited by the size of our CVD chamber. Further engineering of the Ni film microstructure and stress state could enable manufacturing of highly uniform interfacial graphene followed by clean mechanical delamination over practically indefinite dimensions. Moreover, our findings suggest that preferential adhesion can enable production of 2-D materials directly on application-relevant substrates. This is attractive compared to transfer methods, which can cause mechanical damage and leave residues behind.

  2. Fabrication and nanoindentation properties of TiN/NiTi thin films and their applications in electrochemical sensing.

    Science.gov (United States)

    Kumar, Ashvani; Singh, Devendra; Goyal, Rajendra N; Kaur, Davinder

    2009-05-15

    Nanocrystalline TiN/NiTi thin films have been grown on silicon substrate by dc magnetron sputtering to improve the corrosion and mechanical properties of NiTi based shape memory alloys without sacrificing the phase transformation effect. Interestingly, the preferential orientation of the TiN films was observed to change from (1 1 1) to (2 0 0) with change in nature of sputtering gas from 70% Ar+30% N(2) to 100% N(2). In present study the influence of crystallographic orientation of TiN on mechanical and corrosion properties of TiN/NiTi thin films was investigated. TiN (2 0 0)/NiTi films were found to exhibit high hardness, high elastic modulus, and thereby better wear resistance as compared to pure NiTi and TiN (1 1 1)/NiTi films. Electrochemical test revealed that TiN coated NiTi film exhibits better corrosion resistance in 1M NaCl solution as compared to uncoated NiTi film. The application of TiN/NiTi films in the electrochemical sensing of dopamine, which has a critical physiological importance in Parkinson's disease, has been demonstrated. A comparison of voltammetric response of dopamine at silicon based electrodes modified with different nanocrystalline coatings indicated that these films catalyze the oxidation of dopamine.

  3. Fabrication of highly spin-polarized Co2FeAl0.5Si0.5 thin-films

    Directory of Open Access Journals (Sweden)

    M. Vahidi

    2014-04-01

    Full Text Available Ferromagnetic Heusler Co2FeAl0.5Si0.5 epitaxial thin-films have been fabricated in the L21 structure with saturation magnetizations over 1200 emu/cm3. Andreev reflection measurements show that the spin polarization is as high as 80% in samples sputtered on unheated MgO (100 substrates and annealed at high temperatures. However, the spin polarization is considerably smaller in samples deposited on heated substrates.

  4. Fabrication and Modeling of Ambipolar Hydrogenated Amorphous Silicon Thin Film Transistors.

    Science.gov (United States)

    1986-08-01

    that over 150 die can be fabricated on a single 2in Si wafer. Individual die are 4 -- ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ - -- rM M- ri- PA NX RA "’K Kno ’--tx...Kusian, and B. Bullemer, "An Ambipolar Amorphous- Silicon Field-Effect Transistor," Siemens Forsch.-u. Entwickl.-Ber., vol. 14, no. 3, pp. 114-119...1985. 99. H. Pfleiderer, W. Kusian, and B. Bullemer, "An Ambipolar Field-Effect Transistor Model," Siemens Forsch.-u. Entwicki.-Ber., vol. 14, no. 2, pp

  5. Thermal tuning of hollow waveguides fabricated by controlled thin-film buckling.

    Science.gov (United States)

    Epp, E; Ponnampalam, N; McMullin, J N; Decorby, R G

    2009-09-28

    We describe the thermal tuning of air-core Bragg waveguides, fabricated by controlled formation of delamination buckles within a multilayer stack of chalcogenide glass and polymer. The upper cladding mirror is a flexible membrane comprising high thermal expansion materials, enabling large tuning of the air-core dimensions for small changes in temperature. Measurements on the temperature dependence of feature heights showed good agreement with theoretical predictions. We applied this mechanism to the thermal tuning of modal cutoff conditions in waveguides with a tapered core profile. Due to the omnidirectional nature of the cladding mirrors, these tapers can be viewed as waveguide-coupled, tunable Fabry-Perot filters.

  6. Fabrication of transparent antifouling thin films with fractal structure by atmospheric pressure cold plasma deposition.

    Science.gov (United States)

    Miyagawa, Hayato; Yamauchi, Koji; Kim, Yoon-Kee; Ogawa, Kazufumi; Yamaguchi, Kenzo; Suzaki, Yoshifumi

    2012-12-21

    Antifouling surface with both superhydrophobicity and oil-repellency has been fabricated on glass substrate by forming fractal microstructure(s). The fractal microstructure was constituted by transparent silica particles of 100 nm diameter and transparent zinc-oxide columns grown on silica particles by atmospheric pressure cold plasma deposition. The sample surface was coated with a chemically adsorbed monomolecular layer. We found that one sample has the superhydrophobic ability with a water droplet contact angle of more than 150°, while another sample has a high transmittance of more than 85% in a wavelength range from 400 to 800 nm.

  7. Thin films for micro solid oxide fuel cells

    Science.gov (United States)

    Beckel, D.; Bieberle-Hütter, A.; Harvey, A.; Infortuna, A.; Muecke, U. P.; Prestat, M.; Rupp, J. L. M.; Gauckler, L. J.

    Thin film deposition as applied to micro solid oxide fuel cell (μSOFC) fabrication is an emerging and highly active field of research that is attracting greater attention. This paper reviews thin film (thickness ≤1 μm) deposition techniques and components relevant to SOFCs including current research on nanocrystalline thin film electrolyte and thin-film-based model electrodes. Calculations showing the geometric limits of μSOFCs and first results towards fabrication of μSOFCs are also discussed.

  8. Fabrication and morphology of (Hg,Re)-1212 thin films on LaAlO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Su, J.H.; Sastry, P.V.P.S.S.; Schwartz, J

    2003-04-15

    Superconducting (Hg,Re)Ba{sub 2}CaCu{sub 2}O{sub y} ((Hg,Re)-1212) thin films have been prepared on single crystal substrates of LaAlO{sub 3} by reacting laser deposited ReBaCaCuO precursor films with CaHgO{sub 2} in sealed quartz tubes. The effects of the deposition parameters such as laser fluence and substrate temperature, on surface morphology and microstructure were examined by atomic force microscopy (AFM) and scanning electron microscopy (SEM). AFM observations revealed that a granular structure was seen in the precursor films deposited at lower energy (less than 200 mJ) and disappeared at higher energy (250 mJ). SEM investigation on final reacted films showed that the precursor films deposited at 250 deg. C resulted in a well-connected and uniformly dense microstructure, whereas the films deposited at lower or higher temperatures were porous and non-uniform.

  9. Fabrication of periodical surface structures by picosecond laser irradiation of carbon thin films: transformation of amorphous carbon in nanographite

    Science.gov (United States)

    Popescu, C.; Dorcioman, G.; Bita, B.; Besleaga, C.; Zgura, I.; Himcinschi, C.; Popescu, A. C.

    2016-12-01

    Thin films of carbon were synthesized by ns pulsed laser deposition in vacuum on silicon substrates, starting from graphite targets. Further on, the films were irradiated with a picosecond laser source emitting in visible at 532 nm. After tuning of laser parameters, we obtained a film surface covered by laser induced periodical surface structures (LIPSS). They were investigated by optical, scanning electron and atomic force microscopy. It was observed that changing the irradiation angle influences the LIPSS covered area. At high magnification it was revealed that the LIPSS pattern was quite complex, being composed of other small LIPSS islands, interconnected by bridges of nanoparticles. Raman spectra for the non-irradiated carbon films were typical for a-C type of diamond-like carbon, while the LIPSS spectra were characteristic to nano-graphite. The pristine carbon film was hydrophilic, while the LIPSS covered film surface was hydrophobic.

  10. Fabrication and evaluation of solution-processed reduced graphene oxide electrodes for p- and n-channel bottom-contact organic thin-film transistors.

    Science.gov (United States)

    Becerril, Hector A; Stoltenberg, Randall M; Tang, Ming Lee; Roberts, Mark E; Liu, Zunfeng; Chen, Yongsheng; Kim, Do Hwan; Lee, Bang-Lin; Lee, Sangyoon; Bao, Zhenan

    2010-11-23

    Reduced graphene oxide (RGO) is an electrically conductive carbon-based nanomaterial that has recently attracted attention as a potential electrode for organic electronics. Here we evaluate several solution-based methods for fabricating RGO bottom-contact (BC) electrodes for organic thin-film transistors (OTFTs), demonstrate functional p- and n-channel devices with such electrodes, and compare their electrical performance with analogous devices containing gold electrodes. We show that the morphology of organic semiconductor films deposited on RGO electrodes is similar to that observed in the channel region of the devices and that devices fabricated with RGO electrodes have lower contact resistances compared to those fabricated with gold contacts. Although the conductivity of RGO is poor compared to that of gold, RGO is still an enticing electrode material for organic electronic devices possibly owing to the retention of desirable morphological features, lower contact resistance, lower cost, and solution processability.

  11. Fabrication of solution-processed amorphous indium zinc oxide thin-film transistors at low temperatures using deep-UV irradiation under wet conditions

    Science.gov (United States)

    Park, Jee Ho; Chae, Soo Sang; Yoo, Young Bum; Lee, Ji Hoon; Lee, Tae Il; Baik, Hong Koo

    2014-03-01

    We fabricated solution-processed indium zinc oxide (IZO) thin film transistors (TFTs) at annealing temperatures as low as 250 °C using deep UV (DUV) irradiation in water vapor medium. The DUV light decomposed the carbon compounds in the IZO films, and the hydroxyl radicals generated when water vapor reacted with ozone effectively oxidized the films. These phenomena were confirmed by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. Finally, we fabricated DUV-treated IZO TFTs in water-vapor medium at 250 °C with a mobility of 1.2 cm2/Vs and an on/off current ratio of 2.66 × 106.

  12. Fabrication of thin electrolyte film by electrophoretic deposition for intermediate-temperature solid oxide fuel cells. Paper no. IGEC-1-101

    Energy Technology Data Exchange (ETDEWEB)

    Lankin, M.; Karan, K. [Fuel Cell Research Centre, Kingston, Ontario (Canada)]|[Queen' s Univ., Dept. of Chemical Engineering, Kingston, Ontario (Canada)

    2005-07-01

    'Full text:' Intermediate temperature solid oxide fuel cells (ITSOFCs) operating over 500-700C offer the potential of using stainless steel interconnects, thereby, significantly reducing material costs. Lower temperatures, however, result in higher ohmic losses in the electrolyte. These losses can be reduced if SOFCs based on thin electrolyte layer (10-20 {mu}m) are fabricated. Conventional methods for thin-film fabrication such as electro-vapour deposition or plasma spraying are relatively expensive techniques. An alternative method is electrophoretic deposition (EPD), which is inexpensive and is capable of producing uniform electrolyte layers on the order of 10-40{mu}m very rapidly (<5min). In this study, EPD is employed to fabricate thin gadolina-doped ceria (GDC) electrolytes on Cu-GDC anodes for use in IT-SOFCs fuelled by biomass-derived fuels. To date, experimental work has allowed optimization of parameters influencing EPD process. Scanning electron microscopic analyses indicate that electrolyte layers of 10{mu}m thickness, uniform thickness and moderate density are produced by EPD. The paper will present the progress on the characterization of thin film electrolytes as well as development of single-cell SOFC based on EPD process. (author)

  13. Fabrication of Transparent Conductive Zinc Oxide Co-Doped with Fluorine and Zirconium Thin Solid Films by Ultrasonic Chemical Pyrolysis: Effects of Precursor Solution Aging and Substrate Temperature

    Directory of Open Access Journals (Sweden)

    Luis Castañeda

    2013-01-01

    Full Text Available Highly transparent, conducting zinc oxide [ZnO] thin films co-doped with fluorine and zirconium have been deposited on glass substrates by the ultrasonic chemical spraying technique. The effects of aging of the starting solution and substrate temperature on the structural, morphological, and electrical properties of the ZnO:F:Zr films have been studied. The resistivity of the films decreases with the aging time of the starting solution until the seventeenth day reaching a minimum of about 1.2×10−2 Ω cm and then increases. Though all the samples are of polycrystalline hexagonal wurtzite type and grow preferentially with (002 plane parallel to the substrate, their morphology depends strongly on the aging time of the reaction solution. The optical transmittance of all the films remained around 80% in the visible spectral range. These highly transparent, low resistive thin films are expected to be highly useful as transparent electrodes in the fabrication of thin film solar cells.

  14. Microwave characterization of nanostructured ferroelectric Ba(0.6)Sr(0.4)TiO(3) thin films fabricated by pulsed laser deposition.

    Science.gov (United States)

    Campbell, Angela L; Biggers, Rand R; Subramanyam, Guru; Kozlowski, Gregory; Kleismit, Richard A; Zate, Hollie N; Hopkins, Simon C; Glowacki, Bartek A; Riehl, Bonnie D; Peterson, Timothy L

    2008-12-03

    A series of nanostructured ferroelectric thin films of barium strontium titanate were fabricated using a pulsed laser deposition system with real-time in situ process control. Pulsed laser deposition parameters were controlled during the growth of nanostructured thin films for use in the development of high frequency tunable microwave devices. The thin films were all grown at the same substrate temperature and laser beam energy density, but the chamber oxygen partial pressure (COPP) was varied systematically from 19 mTorr through 1000 Torr. Structural and electromagnetic characterization was performed using atomic force microscopy and evanescent microwave microscopy, respectively. Atomic force microscopy showed a linear increase in grain size with increases in the ambient oxygen pressure from 38 to 150 mTorr and from 300 mTorr to 1000 Torr. The correlation of the microwave properties with the epitaxial film microstructure can be attributed to stresses and polarizability in the film. Microwave characterization showed that a COPP of 75 mTorr yielded the most desirable film in terms of tunability and loss tangent over a wide frequency range.

  15. Fabrication and characterization of high-quality (Hg,Re)Ba sub 2 CaCu sub 2 O sub y thin films on LSAT substrates

    CERN Document Server

    Ogawa, A; Sugano, T; Adachi, S; Suzuki, K; Nakagaki, N; Enomoto, Y; Tanabe, K

    2002-01-01

    We have succeeded in fabricating high-quality (Hg,Re)Ba sub 2 CaCu sub 2 O sub y ((Hg,Re)-1212) thin films with a thickness of 300 nm on (LaAlO sub 3) sub 0 sub . sub 3 -(SrAl sub 0 sub . sub 5 Ta sub 0 sub . sub 5 O sub 3) sub 0 sub . sub 7 (LSAT) substrates. The films were fabricated by repeating the two-step process, which consists of the preparation of a precursor film and the heat treatment in Hg-vapour atmosphere. For the purpose of improving their crystal quality, the heat treatment in the final process was carried out in a lower Hg-vapour pressure for a longer time. The obtained films had a flat surface and no appreciable outgrowth. The films exhibited a T sub c value of 120 K and a J sub c value of 4.4 x 10 sup 6 A cm sup - sup 2 at 77 K in a self-field, which are substantially higher than those for the films fabricated in higher Hg-vapour atmosphere. Their electrical transport properties in magnetic fields up to 7 T were investigated. Their lower irreversibility fields at 77 K as well as the higher ...

  16. Fabrication Of YSZ Thin Film By Electrochemical Deposition Method And The Effect Of The Pulsed Electrical Fields For Morphology Control

    Directory of Open Access Journals (Sweden)

    Fujita T.

    2015-06-01

    Full Text Available In this study, surface morphology control ions in a precursor solution and patterning the YSZ film has been carried out during deposition of thin film from a precursor solution by applying the electrical field for deposition and the pulsed electrical field. The precursor solution was mixed them of ZrO(NO34, Y(NO33-6H2O into deionized water, and then was controlled nearly pH3 by adding NH3(aq. The thin film was deposited on the glass substrate of the minus electrode side by applying the electrical field of 3.0 V for 20 min. In addition, another pulsed voltage was applied to the electrical field along the perdicular direction to the film deposition direction. After annealing samples at 773 K for 6 h in air, the film was crystallized and obtained YSZ film. In the limited condition, the linear patterns of YSZ films due to the frequency of the applied electrical field were observed. It is expected that ions in a precursor solution are controlled by applying the pulsed voltage and the YSZ film is patterned on the substrate.

  17. A NOVEL LOW THERMAL BUDGET THIN-FILM POLYSILICON FABRICATION PROCESS FOR LARGE-AREA, HIGH-THROUGHPUT SOLAR CELL PRODUCTION

    Energy Technology Data Exchange (ETDEWEB)

    Yue Kuo

    2010-08-15

    A novel thin-film poly-Si fabrication process has been demonstrated. This low thermal budget process transforms the single- and multi-layer amorphous silicon thin films into a poly-Si structure in one simple step over a pulsed rapid thermal annealing process with the enhancement of an ultrathin Ni layer. The complete poly-Si solar cell was fabricated in a short period of time without deteriorating the underneath glass substrate. The unique vertical crystallization process including the mechanism is discussed. Influences of the dopant type and process parameters on crystal structure will be revealed. The poly-Si film structure has been proved using TEM, XRD, Raman, and XPS methods. The poly-Si solar cell structure and the performance have been examined. In principle, the new process is potentially applicable to produce large-area thin-film poly-Si solar cells at a high throughput and low cost. A critical issue in this process is to prevent the excessive dopant diffusion during crystallization. Process parameters and the cell structure have to be optimized to achieve the production goal.

  18. Flexible Sensing Arrays Fabricated with Carbon Nanofiber Composite Thin Films for Posture Monitoring

    Science.gov (United States)

    Chang, Fuh-Yu; Wang, Ruoh-Huey; Lin, Yu-Hsien; Chen, Tse-Min; Lee, Yueh-Feng; Huang, Shu-Jiuan; Liu, Chia-Ming

    2011-06-01

    Faulty posture increases joint stress and causes postural pain syndrome. In this paper, we present a portable strain sensing system with flexible sensor arrays to warn patients to correct inappropriate posture. A 3×3 flexible strain sensing array system was fabricated using patterned surface treatment and the tilted-drop process with carbon nanofiber composite solutions on polyimide substrates. Atmospheric plasma was used to enhance or reduce the surface energy in specific areas for patterned surface treatment. A scanning circuit was also developed to capture the signal from the flexible sensing array. The developed system has been used to measure the bent angle of the human neck from 15 to 60°. The results indicate that human posture can be successfully captured by analyzing the measured strains from a flexible strain sensing array.

  19. Fabrication and Characterization of Thin Film Solar Cell Made from CuIn0.75Ga0.25S2 Wurtzite Nanoparticles

    OpenAIRE

    Fengyan Zhang; Chivin Sun; Cyril Bajracharya; Rodriguez, Rene G.; Joshua J. Pak

    2013-01-01

    CuIn0.75Ga0.25S2 (CIGS) thin film solar cells have been successfully fabricated using CIGS Wurtzite phase nanoparticles for the first time. The structure of the cell is Glass/Mo/CIGS/CdS/ZnO/ZnO:Al/Ag. The light absorption layer is made from CIGS Wurtzite phase nanoparticles that are formed from single-source precursors through a microwave irradiation. The Wurtzite phase nanoparticles were converted to Chalcopyrite phase film through a single-step annealing process in the presence of argon an...

  20. Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication of Superlattice Structures Using AlN and InN

    Science.gov (United States)

    1992-06-01

    AD-A253 331 Semiannual Report Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication...Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication of Superlattice Structures Using...34 substrates, such as using a graded AlxGal-xN solid solution as a buffer layer. E. Conclusion We have shown that in the use of our modified gas source MBE

  1. Facile and Scalable Fabrication of Highly Efficient Lead Iodide Perovskite Thin-Film Solar Cells in Air Using Gas Pump Method.

    Science.gov (United States)

    Ding, Bin; Gao, Lili; Liang, Lusheng; Chu, Qianqian; Song, Xiaoxuan; Li, Yan; Yang, Guanjun; Fan, Bin; Wang, Mingkui; Li, Chengxin; Li, Changjiu

    2016-08-10

    Control of the perovskite film formation process to produce high-quality organic-inorganic metal halide perovskite thin films with uniform morphology, high surface coverage, and minimum pinholes is of great importance to highly efficient solar cells. Herein, we report on large-area light-absorbing perovskite films fabrication with a new facile and scalable gas pump method. By decreasing the total pressure in the evaporation environment, the gas pump method can significantly enhance the solvent evaporation rate by 8 times faster and thereby produce an extremely dense, uniform, and full-coverage perovskite thin film. The resulting planar perovskite solar cells can achieve an impressive power conversion efficiency up to 19.00% with an average efficiency of 17.38 ± 0.70% for 32 devices with an area of 5 × 2 mm, 13.91% for devices with a large area up to 1.13 cm(2). The perovskite films can be easily fabricated in air conditions with a relative humidity of 45-55%, which definitely has a promising prospect in industrial application of large-area perovskite solar panels.

  2. Biomimetic thin film synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  3. Fabrication and Characterization of Al/p-CuInAlSe2 Thin Film Schottky Diodes

    Directory of Open Access Journals (Sweden)

    Usha Parihar

    2013-05-01

    Full Text Available Al/p-CuInAlSe2 polycrystalline schottky diodes fabricated by flash evaporation method were undertaken for their electrical analysis at room temperature. Diode parameters of the undertaken diodes were then derived from the current-voltage (I-V as well as capacitance-voltage (C-V characteristics. It has been observed that the schottky barrier height deduced from the room temperature I-V is lower to that obtained from the C-V characteristics and is attributed to the fact that I-V analysis includes both the image force and dipole lowering effects and is also reduced by the tunneling and leakage currents. The slope variation of the frequency dependent C – 2-V characteristics for the Al/p-CuInAlSe2 Schottky diode at varying frequency values from 50 kHz to 1 MHz suggests a large density of slow traps or interface states at the M-S junction. As emerging from the parameters values energy band diagram of Al and P-CuInAlSe2 has been reconstructed.

  4. Fabricating superconducting interfaces between artificially grown LaAlO3 and SrTiO3 thin films

    Directory of Open Access Journals (Sweden)

    Danfeng Li

    2014-01-01

    Full Text Available Realization of a fully metallic two-dimensional electron gas (2DEG at the interface between artificially grown LaAlO3 and SrTiO3 thin films has been an exciting challenge. Here we present for the first time the successful realization of a superconducting 2DEG at interfaces between artificially grown LaAlO3 and SrTiO3 thin films. Our results highlight the importance of two factors—the growth temperature and the SrTiO3 termination. We use local friction force microscopy and transport measurements to determine that in normal growth conditions the absence of a robust metallic state at low temperature in the artificially grown LaAlO3/SrTiO3 interface is due to the nanoscale SrO segregation occurring on the SrTiO3 film surface during the growth and the associated defects in the SrTiO3 film. By adopting an extremely high SrTiO3 growth temperature, we demonstrate a way to realize metallic, down to the lowest temperature, and superconducting 2DEG at interfaces between LaAlO3 layers and artificially grown SrTiO3 thin films. This study paves the way to the realization of functional LaAlO3/SrTiO3 superlattices and/or artificial LaAlO3/SrTiO3 interfaces on other substrates.

  5. Low-voltage polymer/small-molecule blend organic thin-film transistors and circuits fabricated via spray deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hunter, By Simon; Anthopoulos, Thomas D., E-mail: t.anthopoulos@ic.ac.uk [Department of Physics and Centre for Plastic Electronics, Imperial College London, South Kensington SW7 2AZ (United Kingdom); Ward, Jeremy W.; Jurchescu, Oana D. [Department of Physics, Wake Forest University, Winston-Salem, North Carolina 27109 (United States); Payne, Marcia M.; Anthony, John E. [Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506 (United States)

    2015-06-01

    Organic thin-film electronics have long been considered an enticing candidate in achieving high-throughput manufacturing of low-power ubiquitous electronics. However, to achieve this goal, more work is required to reduce operating voltages and develop suitable mass-manufacture techniques. Here, we demonstrate low-voltage spray-cast organic thin-film transistors based on a semiconductor blend of 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene and poly(triarylamine). Both semiconductor and dielectric films are deposited via successive spray deposition in ambient conditions (air with 40%–60% relative humidity) without any special precautions. Despite the simplicity of the deposition method, p-channel transistors with hole mobilities of >1 cm{sup 2}/Vs are realized at −4 V operation, and unipolar inverters operating at −6 V are demonstrated.

  6. Thin film device applications

    CERN Document Server

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  7. Research on fabrication technology for thin film solar cells for practical use. Technological development for qualitative improvement (development of fabrication technology of thin film polycrystalline Si solar cell); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Kohinshitsuka gijutsu (usumaku takessho silicon kei taiyo denchi seizo no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M. [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on the fabrication technology of thin film polycrystalline Si solar cells in fiscal 1994. (1) On the fabrication technology of high-quality Si thin films, the new equipment was studied which allows uniform stable melting recrystallization over a large area. The new equipment adopted a heating method based on RTP system, and is now under adjustment. (2) On the fabrication technology of light/carrier confinement structure, degradation of hydrogen-treated thin film Si solar cells by light irradiation was examined. As a result, since any characteristic degradation was not found even by long time light irradiation, the high quality of the cells was confirmed regardless of hydrogen-treatment. Fabrication of stable reproducible fine texture structure became possible by using fabrication technology of light confinement structure by texture treatment of cell surfaces. (3) On low-cost process technology, design by VEST process, estimation of cell characteristics by simulation, and characteristics of prototype cells were reported. 33 figs., 1 tab.

  8. Multifunctional thin film surface

    Energy Technology Data Exchange (ETDEWEB)

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  9. Characteristics and Time-Dependent Instability of Ga-Doped ZnO Thin Film Transistor Fabricated by Radio Frequency Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    黄海琴; 孙建; 刘凤娟; 赵建伟; 胡佐富; 李振军; 张希清; 王永生

    2011-01-01

    We report on the fabrication and electrical characteristics of Ga-doped ZnO thin film transistors(TFTs).Low Ga-doped(0.7wt%)ZnO thin films were deposited on SiO2/p-Si substrates by rf magnetron sputtering.The GZO TFTs show a mobility of 1.76cm2/V.s,an on/off ratio of 1.0 × 106,and a threshold voltage of 35 V.The time-dependent instability of the TFT is studied.The VTH shifts negatively.In addition,the device shows a decrease of the on/off ratio,mainly due to the increase of the off-current.The mechanisms of instability are discussed.%We report on the fabrication and electrical characteristics of Ga-doped ZnO thin 61m transistors (TFTs). Low Ga-doped (0.7wt%) ZnO thin Rims were deposited on SiO2/p-Si substrates by rf magnetron sputtering. The GZO TFTs show a mobility of 1.76cm2/V-s, an on/off ratio of 1.0 x 106, and a threshold voltage of 35 V. The time-dependent instability of the TFT is studied. The VTH shifts negatively. In addition, the device shows a decrease of the on/off ratio, mainly due to the increase of the off-current. The mechanisms of instability are discussed.

  10. Process for fabrication of metal oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Tracy, C.E.; Benson, D.; Svensson, S.

    1990-07-17

    This invention is comprised of a method of fabricating metal oxide films from a plurality of reactants by inducing a reaction by plasma deposition among the reactants. The plasma reaction is effective for consolidating the reactants and producing thin films of metal oxides, e.g. electro-optically active transition metal oxides, at a high deposition rate. The presence of hydrogen during the plasma reaction enhances the deposition rate of the metal oxide. Various types of metal oxide films can be produced.

  11. Structural, photoelectrical characterization of Cu(InAl)Se2 thin films and the fabrication of Cu(InAl)Se2 based solar cells

    Science.gov (United States)

    Kavitha, B.; Dhanam, M.

    2013-01-01

    Films of Cu(InAl)Se2 were deposited onto glass substrates by SILAR (successive ionic layer adsorption and reaction) method. All the deposited films were found to be polycrystalline in nature exhibiting the chalcopyrite structure with the crystallite orientation along (112), (220/204) and (116/312) directions. The photocurrent was found to increase with increase in film thickness and also with increase of light intensity. Photocurrent spectra showed a peak related to the band-to-band transition. The spectral response of Cu(InAl)Se2 thin films was studied by allowing the radiation to pass through a series of interference filters in the wavelength range 300 to 1200 nm. Films of higher thickness exhibited higher photosensitivity while lower thickness films exhibited moderate photosensitivity. Cu(InAl)Se2-based solar cells with different types of buffer layers such as CdS, CdS:Cu, CdS:In were fabricated. The current and voltage were measured using an optical power meter and an electrometer and the fabricated solar cells were illuminated using 100 mW/cm2 white light under AM1 conditions.

  12. New Method for Fabrication of Co3O4 Thin Film Sensors: Structural, Morphological and Optoelectronic Properties

    Directory of Open Access Journals (Sweden)

    Vikas PATIL

    2011-05-01

    Full Text Available Nanocrystalline Co3O4 thin films have been deposited by spin coating technique and then have been analyzed to test their application in NH3 gas-sensing technology. In particular, spectrophotometric and conductivity measurements have been performed in order to determine the optical and electrical properties of Co3O4 thin films. The structure and the morphology of such material have been investigated by X ray diffraction and Scanning electron microscopy. The X-ray diffraction studies confirmed that the films grown by this technique have good crystalline cubic spinel structure and present a random orientation. The morphology of the sol gel derived Co3O4 shows nanocrystalline grains with some overgrown clusters .The optical band gap has been determined from the absorption coefficient. We found that the optical band gap energy decreases from 2.58 eV to 2.07 eV with increasing annealing temperature between 400-700 oC. These mean that the optical quality of Co3O4 films is improved by annealing. The dc electrical conductivity of Co3O4 thin films were increased from 10-4 to 10-2(Ω cm-1 with increase in annealing temperature. The electron carrier concentration (n and mobility (μ of Co3O4 films annealed at 400-700 oC were estimated to be of the order of 2.4 to 4.5 x 1019 cm-3 and 5.2 to 7.0 x 10-5 cm2 V-1 s-1 respectively. It is observed that Co3O4 thin film annealing at 700 oC after deposition provide a smooth and flat texture suited for optoelectronic applications. Gas sensing properties showed that the Co3O4 films (at 700 oC were sensitive as well as fast in responding to NH3. A high sensitivity for ammonia indicates that the Co3O4 films are selective for this gas.

  13. Structure and enhanced thermochromic performance of low-temperature fabricated VO2/V2O3 thin film

    Science.gov (United States)

    Sun, Guangyao; Cao, Xun; Gao, Xiang; Long, Shiwei; Liang, Mengshi; Jin, Ping

    2016-10-01

    For VO2-based smart window manufacture, it is a long-standing demand for high-quality thin films deposited at low temperature. Here, the thermochromic films of VO2 were deposited by a magnetron sputtering method at a fairly low temperature of 250 °C without subsequent annealing by embedding a V2O3 interlayer. V2O3 acts as a seed layer to lower the depositing temperature and buffer layer to epitaxial grow VO2 film. The VO2/V2O3 films display high solar modulating ability and narrow hysteresis loop. Our data can serve as a promising point for industrial production with high degree of crystallinity at a low temperature.

  14. Photoluminescence and diode characteristic of ZnO thin films/junctions fabricated by pulsed laser deposition (PLD) technique

    Energy Technology Data Exchange (ETDEWEB)

    Sasaki, Kazuhiro; Komiyama, Takao; Chonan, Yasunori; Yamaguchi, Hiroyuki; Aoyama, Takashi [Department of Electronics and Information Systems, Akita Prefectural University, 84-4 Ebinokuchi, Tsuchiya, Yuri-honjo, Akita 015-0055 (Japan)

    2010-02-15

    ZnO:Ga and ZnO:P films were grown by a pulsed laser deposition (PLD) technique changing the dopant concentrations, and their photoluminescence (PL) spectra were obtained. Then, ZnO:P/ZnO:Ga junctions were fabricated and their junction characteristics were evaluated. As the Ga concentration increased in the films, the PL intensity was decreased while as the P concentration increased, the PL intensity was increased. The maximum PL intensities were obtained for the films of 0.5%(Ga) and 7.0% (P), respectively. Rectifying junction characteristics were observed only for the combination of 0.5-1.0% (Ga) and 5.0% (P) films. Mutual dopant diffusion is supposed to explain the relation between the PL and the junction characteristics. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Fabrication of Ta–Si–N/Ag nanocomposite thin films with near-zero temperature coefficient of resistance

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Haitao; Li, Cuilan [State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Ma, Fei, E-mail: mafei@mail.xjtu.edu.cn [State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Song, Zhongxiao, E-mail: ZhongxiaoSong@mail.xjtu.edu.cn [State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Xu, Kewei, E-mail: kwxu@mail.xjtu.edu.cn [State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Department of Physics and Opt-electronic Engineering, Xi’an University of Arts and Science, Xi’an 710065, Shaanxi (China)

    2015-08-15

    Highlights: • Composite thin films with Ag nano-grains uniformly distributed in amorphous Ta–Si–N matrix are obtained. • The temperature coefficient of resistance and the resistivity can be well adjusted by changing Si component. • The balance between quantum tunneling effect and phonon scattering effect results in near-zero TCR. • The near-zero TCR can be maintained at an extremely low temperature from 105 K to 225 K. - Abstract: Ta–Si–N/Ag nanocomposite thin films were prepared by reactive magnetron co-sputtering of Ta, Si and Ag targets in the plasma of N{sub 2} and Ar. It was found that Ag nano-grains were uniformly distributed in the amorphous matrix due to the incorporation of Si. The sizes of Ag grains and the separation between them could be well controlled by changing the Si component, which can be adopted to improve the electronic properties of the composite resistive films. A near-zero temperature coefficient of resistance (TCR) of +39.7 ppm/K was obtained in the thin films with a Si component of 5.88 at.% as a result of the balance of quantum tunneling effect and phonon scattering effect. This is consolidated by the changes in the measured carrier density and Hall mobility at different temperatures. Particularly, the near-zero TCR could be maintained at an extremely low temperature from 105 K to 225 K. The results are of great significance for the exploitation of high-performance resistive thin films.

  16. Selective and Sequential Re-Assembly of Patterned Block Copolymer Thin Film for Fabricating Polymeric, Inorganic, and Their Composite Nanostructured Arrays.

    Science.gov (United States)

    Zu, Xihong; Gong, Jian; Tu, Weiping; Deng, Yulin

    2011-10-04

    We report that the nanostructures of poly(styrene-block-4-vinylpyridine) block copolymer (PS-b-P4VP) thin film on a wafer substrate can be re-assembled by sequential vapor treatment using selected solvents. Metal or other inorganic nanoparticles that were randomly pre-loaded inside or on the surface of PS-b-P4VP thin film could be pulled to the rim of PS and P4VP along with the movements of PS and P4VP blocks during the treatment. As a result, the patterned polymeric or inorganic/polymer composite nanoisland and nanoring arrays were fabricated. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Thin films under chemical stress

    Energy Technology Data Exchange (ETDEWEB)

    1991-01-01

    The goal of work on this project has been develop a set of experimental tools to allow investigators interested in transport, binding, and segregation phenomena in composite thin film structures to study these phenomena in situ. Work to-date has focuses on combining novel spatially-directed optical excitation phenomena, e.g. waveguide eigenmodes in thin dielectric slabs, surface plasmon excitations at metal-dielectric interfaces, with standard spectroscopies to understand dynamic processes in thin films and at interfaces. There have been two main scientific thrusts in the work and an additional technical project. In one thrust we have sought to develop experimental tools which will allow us to understand the chemical and physical changes which take place when thin polymer films are placed under chemical stress. In principle this stress may occur because the film is being swelled by a penetrant entrained in solvent, because interfacial reactions are occurring at one or more boundaries within the film structure, or because some component of the film is responding to an external stimulus (e.g. pH, temperature, electric field, or radiation). However all work to-date has focused on obtaining a clearer understanding penetrant transport phenomena. The other thrust has addressed the kinetics of adsorption of model n-alkanoic acids from organic solvents. Both of these thrusts are important within the context of our long-term goal of understanding the behavior of composite structures, composed of thin organic polymer films interspersed with Langmuir-Blodgett (LB) and self-assembled monolayers. In addition there has been a good deal of work to develop the local technical capability to fabricate grating couplers for optical waveguide excitation. This work, which is subsidiary to the main scientific goals of the project, has been successfully completed and will be detailed as well. 41 refs., 10 figs.

  18. Fabrication and microwave properties of Y-Ba-Cu-O and Bi-Ca-Sr-Cu-O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sobolewski, R.; Konopka, J.; Kula, W.; Gierlowski, P.; Konopka, A.; Lewandowski, S.J.

    1989-03-01

    The authors report their studies on the interaction of Y-Ba-Cu-O and Bi-Ca-Sr-Cu-O thin films with microwaves. The films were prepared on cubic zirconia and magnesium oxide substrates using a modified spray deposition technique. The tested films were about 1-3 /mu/m thick and exhibited good superconducting properties (e.g. for YBCO-on zirconia films the 10-90% transition width was 2 K, and the zero resistance was reached at 89 K). Several test structures have been designed by spraying a mixture of nitrate precursors on heated substrates through very thin stencil masks. The supercurrent dependence on millimeter wavelength microwave illumination was measured, and microwave detection and mixing experiments were performed. The films of both materials exhibited proper ties characteristic for granular superconductors, with Josephson-type coupling at the intergrain connections. The studies also demonstrated that these materials can be successfully used as very sensitive millimeter radiation detectors operational at liquid nitrogen temperatures.

  19. Carbon nanotube based transparent conductive thin films.

    Science.gov (United States)

    Yu, X; Rajamani, R; Stelson, K A; Cui, T

    2006-07-01

    Carbon nanotube (CNT) based optically transparent and electrically conductive thin films are fabricated on plastic substrates in this study. Single-walled carbon nanotubes (SWNTs) are chemically treated with a mixture of concentrated sulfuric acid and nitric acid before being dispersed in aqueous surfactant-contained solutions. SWNT thin films are prepared from the stable SWNT solutions using wet coating techniques. The 100 nm thick SWNT thin film exhibits a surface resistivity of 6 kohms/square nanometer with an average transmittance of 88% on the visible light range, which is three times better than the films prepared from the high purity as-received SWNTs.

  20. High-performance FeSe0.5Te0.5 thin films fabricated on less-well-textured flexible coated conductor templates

    Science.gov (United States)

    Xu, Zhongtang; Yuan, Pusheng; Ma, Yanwei; Cai, Chuanbing

    2017-03-01

    We report on the transport properties of FeSe0.5Te0.5 (FST) thin films fabricated on less-well-textured flexible coated conductor templates with LaMnO3 (LMO) as buffer layers using pulsed laser deposition. The LMO buffer layers exhibit large in-plane misalignment of ˜7.72°, which is unfavorable for cuprate-coated conductors due to the high grain boundaries. The FST thin films show a superconducting transition temperature of 16.8 K, higher than that of bulk materials due to the compressive strain between LMO and FST. Atomic force microscopy observations reveal that island-like features appear at the surfaces of both LMO and FST, confirming the island growth mode. A self-field transport critical-current density of up to 0.43 MA cm-2 at 4.2 K has been observed in FST thin films, which is much higher than that in powder-in-tube processed FST tapes. The films are capable of carrying current densities of over 105 A cm-2 in the whole applied magnetic field up to 9 T, showing great potential for high-field applications. The results indicate that, for FST, highly textured metal tapes are not needed to produce coated conductors with high performance, which is of great advantage over cuprate-coated conductors.

  1. Molecular rectification with identical metal electrodes at low temperatures Thin film deposition; Gold; Molecular electronics; Langmuir- Blodgett; Au/LB/Au structures; Fabrication

    CERN Document Server

    Okazaki, N

    2003-01-01

    A gold deposition technique for the fabrication of Au/LB/Au structures has been developed. The kinetic energy of evaporated gold atoms is reduced by scattering the gold atoms from argon gas. Moreover, the samples are cooled down below 173K (-100 deg C) to avoid the diffusion of gold atoms into the LB films and to fabricate electrically continuous thin gold electrodes (This technique has since been used in fabrication of Au/LB/Au structures even with monolayer LB films (Metzger, et al. (2001)). To measure the current-voltage characteristics of the Au/LB/Au structures at liquid helium temperatures, new junction geometries have been explored. To avoid the direct contact of the Gallium-Indium eutectic onto the LB films, which is the cause of the breakdown of the junction at lower temperatures, a cross electrode junction geometry is used. The problem of poor Langmuir-Blodgett film deposition at the penumbra region of the base electrode is avoided by covering the penumbra region with an insulating omega-tricosenoic...

  2. Fabrication of Meso-Porous Sintered Metal Thin Films by Selective Etching of Silica Based Sacrificial Template

    Directory of Open Access Journals (Sweden)

    Ludovic F. Dumee

    2014-08-01

    Full Text Available Meso-porous metal materials have enhanced surface energies offering unique surface properties with potential applications in chemical catalysis, molecular sensing and selective separation. In this paper, commercial 20 nm diameter metal nano-particles, including silver and copper were blended with 7 nm silica nano-particles by shear mixing. The resulted powders were cold-sintered to form dense, hybrid thin films. The sacrificial silica template was then removed by selective etching in 12 wt% hydrofluoric acid solutions for 15 min to reveal a purely metallic meso-porous thin film material. The impact of the initial silica nano-particle diameter (7–20 nm as well as the sintering pressure (5–20 ton·m−2 and etching conditions on the morphology and properties of the final nano-porous thin films were investigated by porometry, pyknometery, gas and liquid permeation and electron microscopy. Furthermore, the morphology of the pores and particle aggregation during shear mixing were assessed through cross-sectioning by focus ion beam milling. It is demonstrated that meso-pores ranging between 50 and 320 nm in average diameter and porosities up to 47% can be successfully formed for the range of materials tested.

  3. Effects of annealing temperature on crystallisation kinetics and properties of polycrystalline Si thin films and solar cells on glass fabricated by plasma enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tao Yuguo, E-mail: yuguo.tao@hotmail.com [Photovoltaics Centre of Excellence, University of New South Wales, Sydney NSW 2052 (Australia); Varlamov, Sergey; Jin, Guangyao [Photovoltaics Centre of Excellence, University of New South Wales, Sydney NSW 2052 (Australia); Wolf, Michael; Egan, Renate [CSG Solar Pty Ltd, Sydney, NSW (Australia)

    2011-10-31

    Solid-phase crystallisation of Si thin films on glass fabricated by plasma enhanced chemical vapour deposition is compared at different annealing temperatures. Four independent techniques, optical transmission microscopy, Raman and UV reflectance spectroscopy, and X-ray diffraction, are used to characterise the crystallisation kinetics and film properties. The 1.5 {mu}m thick films with the n+/p-/p+ solar cell structure have incubation times of about 300, 53, and 14 min and full crystallisation times of about 855, 128, and 30 min at 600 deg. C, 640 deg. C, and 680 deg. C respectively. Estimated activation energies for incubation and crystal growth are 2.7 and 3.2 eV respectively. The average grain size in the resulting polycrystalline Si films measured from scanning electron microscopy images gradually decreases with a higher annealing temperature and the crystal quality becomes poorer according to the Raman, UV reflection, and X-ray diffraction results. The dopant activation and majority carrier mobilities in heavily doped n+ and p+ layers are similar for all crystallisation temperatures. Both the open-circuit voltage and the spectral response are lower for the cells crystallised at higher temperatures and the minority carrier diffusion lengths are shorter accordingly although they are still longer than the cell thickness for all annealing temperatures. The results indicate that shortening the crystallisation time by merely increasing the crystallisation temperature offers little or no merits for PECVD polycrystalline Si thin-film solar cells on glass.

  4. Fabrication of dye sensitized solar cell using Cr doped Cu-Zn-Se type chalcopyrite thin film

    Energy Technology Data Exchange (ETDEWEB)

    Joseph, D. Paul; Venkateswaran, C. [Materials Science Centre, Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai-600 025 (India); Ganesan, S.; Suthanthiraraj, S. Austin; Maruthamuthu, P. [Department of Energy, University of Madras, Guindy Campus, Chennai 600 025 (India); Kovendhan, M. [Department of Physics, Presidency College, Chennai 600 005 (India)

    2011-09-15

    Chalcopyrites are a versatile class of semiconductors known for their potential in photovoltaic applications. Considering the well established CuInSe{sub 2} as a prototype system, a new compound of the chalcopyrite type, Cu{sub 1-x}Zn{sub 1-y}Se{sub 2-{delta}}, by replacing In with Zn, has been prepared (both undoped and 2% Cr doped) by the metallurgical method. Thin films have been deposited by the thermal evaporation technique using the stabilized polycrystalline compounds as charge. Structural, compositional, morphological, and optical properties of the films are analyzed and reported. Use of these films as electrodes in dye sensitized solar cell (DSSC) is demonstrated. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Carbon Nanotube Thin-Film Antennas.

    Science.gov (United States)

    Puchades, Ivan; Rossi, Jamie E; Cress, Cory D; Naglich, Eric; Landi, Brian J

    2016-08-17

    Multiwalled carbon nanotube (MWCNT) and single-walled carbon nanotube (SWCNT) dipole antennas have been successfully designed, fabricated, and tested. Antennas of varying lengths were fabricated using flexible bulk MWCNT sheet material and evaluated to confirm the validity of a full-wave antenna design equation. The ∼20× improvement in electrical conductivity provided by chemically doped SWCNT thin films over MWCNT sheets presents an opportunity for the fabrication of thin-film antennas, leading to potentially simplified system integration and optical transparency. The resonance characteristics of a fabricated chlorosulfonic acid-doped SWCNT thin-film antenna demonstrate the feasibility of the technology and indicate that when the sheet resistance of the thin film is >40 ohm/sq no power is absorbed by the antenna and that a sheet resistance of antenna. The dependence of the return loss performance on the SWCNT sheet resistance is consistent with unbalanced metal, metal oxide, and other CNT-based thin-film antennas, and it provides a framework for which other thin-film antennas can be designed.

  6. Fabrication and characterization of photoelectrode thin films with different morphologies of TiO2 nanoparticles for dye-sensitized solar cells.

    Science.gov (United States)

    Kao, Mu-Jung; Chang, Ho; Kuo, Chin-Guo; Huang, Kuohsiu-David; Chen, Yu-Ling

    2011-08-01

    This study deals with the fabrication of three different morphologies of TiO2 nanoparticles to fabricate two-layer photoelectrode thin film for dye-sensitized solar cells (DSSC). The four different TiO2 morphologies are titania nanotubes (Tnt), TiO2 nanoparticles (H220), TiO2 nanoparticle (SP) and commercial DP-25 nanoparticles (P-25). To prepare the thin films of the photoelectrodes, the first layer is coated by H220 TiO2 nanoparticles, and the second is coated by 3 kinds of materials optimally proportionally mixed - P25, SP and Tnt. The photoelectric conversion efficiency of DSSCs with photoelectrodes fabricated using H220 reached 6.31%. Finally, the TiO2 nanaomaterials with four different morphologies were used to prepare a two layer photoelectrode with the structure of H220/P25-Tnt-SP which was combined with a Pt counter electrode to assemble DSSCs. These DSSCs had photoelectric conversion efficiencies of as high as 7.47%.

  7. High-voltage thin-film GaN LEDs fabricated on ceramic substrates: the alleviated droop effect at 670 W/cm(2).

    Science.gov (United States)

    Tsai, M L; Liao, J H; Yeh, J H; Hsu, T C; Hon, S J; Chung, T Y; Lai, K Y

    2013-11-04

    High-voltage thin-film GaN LEDs with the emission wavelength of 455 nm were fabricated on ceramic substrates (230 W/m · K). The high-voltage operation was achieved by three cascaded sub-LEDs with dielectric passivation and metal bridges conformally deposited on the side walls. Under the driving power of 670 W/cm(2), the high-voltage LEDs exhibit much alleviated efficiency droop and the operative temperature below 80 °C. The excellent performances were attributed to the improved current spreading within each sub-LED and the superior heat sinking of the ceramic substrate.

  8. Physical properties of Ag-doped cadmium telluride thin films fabricated by closed-space sublimation technique

    Science.gov (United States)

    Abbas Shah, N.; Ali, A.; Aqili, A. K. S.; Maqsood, A.

    2006-05-01

    Cadmium telluride (CdTe) thin films were prepared by the closed-space sublimation (CSS) technique, using CdTe powder as evaporant onto substrates of water-white glass. In the next step, the annealed films at 450 °C for 30 min were dipped in AgNO 3-H 2O solution at room temperature. These films were again annealed at 450 °C for 1 h to obtain silver-doped samples. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), electrically i.e. DC electrical resistivity as well as photo resistivity by van der Pauw method at room temperature, dark conductivity, activation energy analysis as a function of temperature by two-probe method under vacuum, and spectrophotometry. The electron microprobe analyzer (EMPA) results showed an increase of Ag content composition in the samples by increasing the immersion time of films in solution. The Hall measurements indicated the increase in mobility and carrier concentrations of CdTe films by doping of Ag. A significant change in the shape and size of the CdTe grains were observed.

  9. Micro-collimators fabricated by chemical etching of thin polyallyldiglycol carbonate polymer films exposed to oxygen ions

    Energy Technology Data Exchange (ETDEWEB)

    Choi, V.W.Y.; Ng, C.K.M.; Nikezic, D. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong (Hong Kong); Konishi, T. [National Institute of Radiological Sciences, Department of Technical Support and Development, Chiba 263-8555 (Japan); Yu, K.N., E-mail: peter.yu@cityu.edu.h [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong (Hong Kong)

    2011-03-01

    One approach for {alpha} particle radiobiological experiments is to use solid-state nuclear track detectors (SSNTDs) as support substrates to record the {alpha} particle hit positions on the targets. To facilitate accurate characterization of the hit positions as well as the incident {alpha} particle energies, micro-collimators are required in these experiments to restrict the incident {alpha} particles to those with small deviations from normal incidence with respect to the collimator. In the present paper, we fabricated micro-collimators, which restricted {alpha} particles to those with deviations as low as 12{sup o}. Specially etched polyallyldiglycol carbonate (PADC) films, which are a kind of SSNTD, with a thickness 70 {mu}m were prepared from commercially available PADC films. These were then irradiated by 4.83 MeV/n oxygen ions generated from the heavy-ion medical accelerator in Chiba (HIMAC), Japan. The irradiated films were chemically etched for at least 2.7 h to achieve etched-through air channels to form the micro-collimators. The micro-collimators formed by etching the irradiated films for 2.7, 3.0 and 4.0 h were experimentally shown to be able to restrict {alpha} particles to those very close to normal incidence. In contrast, the micro-collimator formed by etching the irradiated film for 4.5 h started to allow {alpha} particles with larger deviations from normal incidence to pass through, which is likely due to overlapping of air channels from excessive etching.

  10. Fabrication of LiCoO 2 cathode powder for thin film battery by aerosol flame deposition

    Science.gov (United States)

    Lee, Taewon; Cho, Kihyun; Oh, Jangwon; Shin, Dongwook

    Crystalline LiCoO 2 nano-particles for thin film battery were synthesized and deposited by aerosol flame deposition (AFD). The aqueous precursor solution of the lithium nitrate and cobalt acetate was atomized with an ultrasonic vibrator and subsequently carried into the central tube of the torch by flowing dry Ar gas. LiCoO 2 were formed by oxy-hydrogen flame and deposited on a substrate placed in a heating stage. The deposited soot film composed of nano-sized particles was subsequently consolidated into a dense film by high temperature heat treatment at 500-800 °C for 5 h and characterized by SEM, XRD, and Raman spectroscopy. The crystalline carbonates and oxide were first formed by the deposition and the subsequent heat treatment converted those to LiCoO 2. The FWHMs of the XRD peaks were reduced and their intensity increased as the heat treatment temperature increased, which is due to improved crystallinity. When judged from the low enough cation mixing and well-developed layered structure, it is believed that the LiCoO 2 film satisfied the quality standard for the real application. SEM measurements showed that LiCoO 2 were nano-crystalline structure with the average particle size <70 nm and the particle size increased with the increase of heat treatment temperature. The thickness of thin film LiCoO 2 before the consolidation process was about 15 μm and reduced to about 4 μm after sintering.

  11. ZnO thin films fabricated by chemical bath deposition, used as buffer layer in organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lare, Y. [Laboratoire sue l' Energie Solaire, Universite de Lome, Lome (Togo); Godoy, A. [Facultad Ciencias de la Salud, Universidad Diego Portales, Ejercito 141, Santiago de Chile (Chile); Cattin, L. [Universite de Nantes, Nantes Atlantique Universites, IMN, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes, F-44000 France (France); Jondo, K. [Laboratoire sue l' Energie Solaire, Universite de Lome, Lome (Togo); Abachi, T. [Ecole Normale Superieure, Kouba, Alger (Algeria); Diaz, F.R. [Laboratorio de Polimeros, Facultad de Quimica, Pontificia Universidad Catolica de Chile, Casilla 306, Correo 22, Santiago (Chile); Morsli, M. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes, F-44000 France (France); Napo, K. [Laboratoire sue l' Energie Solaire, Universite de Lome, Lome (Togo); del Valle, M.A. [Laboratorio de Polimeros, Facultad de Quimica, Pontificia Universidad Catolica de Chile, Casilla 306, Correo 22, Santiago (Chile); Bernede, J.C., E-mail: jean-christian.bernede@univ-nantes.fr [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes, F-44000 France (France)

    2009-04-15

    ZnO thin films synthetized by chemical bath deposition are used as buffer layer between the anode and the organic electron donor in organic solar cells. Films deposited from zinc nitrate solutions are annealed in room air at 300 deg. C for half an hour. The X-ray diffraction and microanalysis studies show that ZnO polycrystalline thin films are obtained. The solar cells used are based on the couple copper phthalocyanine as electron donor and (N,N-diheptyl-3,4,9,10-perylenetetracarboxylicdiimide-PTCDI-C7) as electron acceptor. It is shown that the presence of the ZnO buffer layer improves the energy conversion efficiency of the cells. Such improvement could be attributed to a better energy level alignment at the anode/electron donor interface. The anode roughness induced by the ZnO buffer layer can also transform the planar interface organic electron donor/electron acceptor into roughen topography. This increases the interface area, where carrier separation takes place, which improves solar cells performances.

  12. Thin film superfluid optomechanics

    CERN Document Server

    Baker, Christopher G; McAuslan, David L; Sachkou, Yauhen; He, Xin; Bowen, Warwick P

    2016-01-01

    Excitations in superfluid helium represent attractive mechanical degrees of freedom for cavity optomechanics schemes. Here we numerically and analytically investigate the properties of optomechanical resonators formed by thin films of superfluid $^4$He covering micrometer-scale whispering gallery mode cavities. We predict that through proper optimization of the interaction between film and optical field, large optomechanical coupling rates $g_0>2\\pi \\times 100$ kHz and single photon cooperativities $C_0>10$ are achievable. Our analytical model reveals the unconventional behaviour of these thin films, such as thicker and heavier films exhibiting smaller effective mass and larger zero point motion. The optomechanical system outlined here provides access to unusual regimes such as $g_0>\\Omega_M$ and opens the prospect of laser cooling a liquid into its quantum ground state.

  13. Thin film ceramic thermocouples

    Science.gov (United States)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  14. Biomimetic thin film deposition

    Science.gov (United States)

    Rieke, P. C.; Campbell, A. A.; Tarasevich, B. J.; Fryxell, G. E.; Bentjen, S. B.

    1991-04-01

    Surfaces derivatized with organic functional groups were used to promote the deposition of thin films of inorganic minerals. These derivatized surfaces were designed to mimic the nucleation proteins that control mineral deposition during formation of bone, shell, and other hard tissues in living organisms. By the use of derivatized substrates control was obtained over the phase of mineral deposited, the orientation of the crystal lattice and the location of deposition. These features are of considerable importance in many technically important thin films, coatings, and composite materials. Methods of derivatizing surfaces are considered and examples of controlled mineral deposition are presented.

  15. Low-temperature, solution-processed indium-oxide thin-film transistors fabricated by using an ultraviolet-ozone treatment

    Science.gov (United States)

    Kim, Hoon; Kang, Chan-mo; Oh, Yeon-Wha; Ryu, Jin Hwa; Baek, Kyu-Ha; Do, Lee-Mi

    2016-04-01

    For the fabrication of low-temperature solution-processed metal-oxide thin-film transistors (TFTs), alternative annealing processes have recently been studied for reduced fabrication cost and applications to flexible devices. Indium nitrate solution has been proposed as a precursor for the low-temperature solution-processed TFTs. However, due to its high decomposition temperature, achieving a high-performance indium-oxide (In2O3) TFT at temperatures below 200°C is still difficult. In this study, for improved metal-oxide formation in low-temperature solution-processed In2O3 TFT, indium nitrate film was exposed to UV-ozone for 30 min before annealing at 200°C. The smooth scanning electron microscopy (SEM) image of the UV-ozone treated film implies that the indium nitrates are condensed after treatment. In addition, X-ray photoemission spectroscopy (XPS) data suggest that UV-ozone decreases the number of oxygen vacancies and increases the number of metal-oxygen-metal bonds in the indium-oxide films. As a result, high electrical device performance was achieved with an improved Ion/off ratio (˜107) and mobility (1.25 cm2V -1s -1).

  16. Structural and dielectric studies of Co doped MgTiO3 thin films fabricated by RF magnetron sputtering

    Directory of Open Access Journals (Sweden)

    T. Santhosh Kumar

    2014-06-01

    Full Text Available We report the structural, dielectric and leakage current properties of Co doped MgTiO3 thin films deposited on platinized silicon (Pt/TiO2/SiO2/Si substrates by RF magnetron sputtering. The role of oxygen mixing percentage (OMP on the growth, morphology, electrical and dielectric properties of the thin films has been investigated. A preferred orientation of grains along (110 direction has been observed with increasing the OMP. Such evolution of the textured growth is explained on the basis of the orientation factor analysis followed the Lotgering model. (Mg1-xCoxTiO3 (x = 0.05 thin films exhibits a maximum relative dielectric permittivity of ɛr = 12.20 and low loss (tan δ ∼ 1.2 × 10−3 over a wide range of frequencies for 75% OMP. The role of electric field frequency (f and OMP on the ac-conductivity of (Mg0.95Co0.05TiO3 have been studied. A progressive increase in the activation energy (Ea and relative permittivity ɛr values have been noticed up to 75% of OMP, beyond which the properties starts deteriorate. The I-V characteristics reveals that the leakage current density decreases from 9.93 × 10−9 to 1.14 × 10−9 A/cm2 for OMP 0% to 75%, respectively for an electric field strength of 250 kV/cm. Our experimental results reveal up to that OMP ≥ 50% the leakage current mechanism is driven by the ohmic conduction, below which it is dominated by the schottky emission.

  17. Fabrication and modification of defects in Cu2ZnSnSe4 single crystals and thin films

    Science.gov (United States)

    Bishop, Douglas M.

    Cu2ZnSn(S,Se)4 solar cells have achieved the highest efficiency among non-toxic earth-abundant thin film solar materials, however low voltage in solar cell devices caused by band tailing and high levels of poorly understood defects bottleneck commercial relevance. Understanding and controlling the complex defect chemistry of the quaternary material is further inhibited by complexities in thin film materials such as grain boundaries, secondary phases and non-homogenous regions. In this work, single crystals are grown and used as a model system to advance the understanding of the defects controlling the electronic properties of Cu2ZnSnSe4. New methods of bulk crystal growth are developed without the use of an external flux agent leading to the growth of millimeter sized single crystals. The optoelectronic properties of both the surface and bulk are evaluated and controlled to reduce recombination and improve solar cell open circuit voltage. Passivation methods are developed for the surface, and new insights into the optimal bulk stoichiometry for solar cells are demonstrated. The effects of Na doping on sub-bandgap defects are shown, and the solubility limits of Na doping into the bulk CZTSe lattice is measured. Defect populations are further manipulated by annealing where the temperature and cool-down rate are controlled, which are shown to change sub-Eg defects critical for band-tailing. Single crystal Cu2ZnSnSe4 devices are demonstrated for the first time, and based on optimized methods for improving surface and bulk defects, a 7.8% efficient single crystal is demonstrated with a voltage equivalent to record thin film device.

  18. Structural and dielectric studies of Co doped MgTiO3 thin films fabricated by RF magnetron sputtering

    Science.gov (United States)

    Kumar, T. Santhosh; Gogoi, P.; Thota, S.; Pamu, D.

    2014-06-01

    We report the structural, dielectric and leakage current properties of Co doped MgTiO3 thin films deposited on platinized silicon (Pt/TiO2/SiO2/Si) substrates by RF magnetron sputtering. The role of oxygen mixing percentage (OMP) on the growth, morphology, electrical and dielectric properties of the thin films has been investigated. A preferred orientation of grains along (110) direction has been observed with increasing the OMP. Such evolution of the textured growth is explained on the basis of the orientation factor analysis followed the Lotgering model. (Mg1-xCox)TiO3 (x = 0.05) thin films exhibits a maximum relative dielectric permittivity of ɛr = 12.20 and low loss (tan δ ˜ 1.2 × 10-3) over a wide range of frequencies for 75% OMP. The role of electric field frequency (f) and OMP on the ac-conductivity of (Mg0.95Co0.05)TiO3 have been studied. A progressive increase in the activation energy (Ea) and relative permittivity ɛr values have been noticed up to 75% of OMP, beyond which the properties starts deteriorate. The I-V characteristics reveals that the leakage current density decreases from 9.93 × 10-9 to 1.14 × 10-9 A/cm2 for OMP 0% to 75%, respectively for an electric field strength of 250 kV/cm. Our experimental results reveal up to that OMP ≥ 50% the leakage current mechanism is driven by the ohmic conduction, below which it is dominated by the schottky emission.

  19. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  20. Thin films for material engineering

    Science.gov (United States)

    Wasa, Kiyotaka

    2016-07-01

    Thin films are defined as two-dimensional materials formed by condensing one by one atomic/molecular/ionic species of matter in contrast to bulk three-dimensional sintered ceramics. They are grown through atomic collisional chemical reaction on a substrate surface. Thin film growth processes are fascinating for developing innovative exotic materials. On the basis of my long research on sputtering deposition, this paper firstly describes the kinetic energy effect of sputtered adatoms on thin film growth and discusses on a possibility of room-temperature growth of cubic diamond crystallites and the perovskite thin films of binary compound PbTiO3. Secondly, high-performance sputtered ferroelectric thin films with extraordinary excellent crystallinity compatible with MBE deposited thin films are described in relation to a possible application for thin-film MEMS. Finally, the present thin-film technologies are discussed in terms of a future material science and engineering.

  1. Scanning electrochemical microscopy studies of micropatterned copper sulfide (CuxS) thin films fabricated by a wet chemistry method

    Science.gov (United States)

    Chen, Miao; Zhao, Jing; Zhao, Xiaocui

    2011-01-01

    Patterned copper sulfide (CuxS) microstructures on Si (1 1 1) wafers were successfully fabricated by a relatively simple solution growth method using copper sulfate, ethylenediaminetetraacetate and sodium thiosulfate aqueous solutions as precursors. The CuxS particles were selectively deposited on a patterned self-assembled monolayer of 3-aminopropyltriethoxysilane regions created by photolithography. To obtain high quality CuxS films, preparative conditions such as concentration, proportion, pH and temperature of the precursor solutions were optimized. Various techniques such as optical microscopy, atomic force microscopy (AFM), X-ray diffraction, optical absorption and scanning electrochemical microscopy (SECM) were employed to examine the topography and properties of the micro-patterned CuxS films. Optical microscopy and AFM results indicated that the CuxS micro-pattern possessed high selectivity and clear edge resolution. From combined X-ray diffraction analysis and optical band gap calculations we conclude that Cu9S5 (digenite) was the main phase within the resultant CuxS film. Both SECM image and cyclic voltammograms confirmed that the CuxS film had good electrical conductivity. Moreover, from SECM approach curve analysis, the apparent electron-transfer rate constant (k) in the micro-pattern of CuxS dominated surface was estimated as 0.04 cm/s. The SECM current map showed high edge acuity of the micro-patterned CuxS. PMID:21785491

  2. Scanning electrochemical microscopy studies of micropatterned copper sulfide (Cu(x)S) thin films fabricated by a wet chemistry method.

    Science.gov (United States)

    Chen, Miao; Zhao, Jing; Zhao, Xiaocui

    2011-05-30

    Patterned copper sulfide (Cu(x)S) microstructures on Si (1 1 1) wafers were successfully fabricated by a relatively simple solution growth method using copper sulfate, ethylenediaminetetraacetate and sodium thiosulfate aqueous solutions as precursors. The Cu(x)S particles were selectively deposited on a patterned self-assembled monolayer of 3-aminopropyltriethoxysilane regions created by photolithography. To obtain high quality Cu(x)S films, preparative conditions such as concentration, proportion, pH and temperature of the precursor solutions were optimized. Various techniques such as optical microscopy, atomic force microscopy (AFM), X-ray diffraction, optical absorption and scanning electrochemical microscopy (SECM) were employed to examine the topography and properties of the micro-patterned Cu(x)S films. Optical microscopy and AFM results indicated that the Cu(x)S micro-pattern possessed high selectivity and clear edge resolution. From combined X-ray diffraction analysis and optical band gap calculations we conclude that Cu(9)S(5) (digenite) was the main phase within the resultant Cu(x)S film. Both SECM image and cyclic voltammograms confirmed that the Cu(x)S film had good electrical conductivity. Moreover, from SECM approach curve analysis, the apparent electron-transfer rate constant (k) in the micro-pattern of Cu(x)S dominated surface was estimated as 0.04 cm/s. The SECM current map showed high edge acuity of the micro-patterned Cu(x)S.

  3. Research and development of photovoltaic power system. Development of novel technologies for fabrication of high quality silicon thin films for solar cells; Taiyoko hatsuden system no kenkyu kaihatsu. Kohinshitsu silicon usumaku sakusei gijutsu

    Energy Technology Data Exchange (ETDEWEB)

    Shimizu, T. [Kanazawa University, Ishikawa (Japan). Faculty of Engineering

    1994-12-01

    Described herein are the results of the FY1994 research program for development of novel technologies for fabrication of high quality thin films of silicon for solar cells. The study on the mechanisms and effects of chemical annealing reveals that the film structure greatly varies depending on substrate temperature during the hydrotreatment process, based on the tests with substrate temperature, deposition of superthin film (T1) and hydrotreatment (T2) as the variable parameters. Chemical annealing at low temperature produces a high-quality a-Si:H film of low defect content. The study on fabrication of thin polycrystalline silicon films at low temperature observes on real time the process of deposition of the thin films on polycrystalline silicon substrates, where a natural oxide film is removed beforehand from the substrate. The results indicate that a thin polycrystalline silicon film of 100% crystallinity can be formed even on a polycrystalline silicon substrate by controlling starting gas composition and substrate temperature. The layer-by-layer method is used as the means for forming the seed crystals on a glass substrate, where deposition and hydrotreatment are repeated alternately, to produce the thin crystalline silicon films of high crystallinity. 3 figs.

  4. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  5. NMR characterization of thin films

    Science.gov (United States)

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  6. Superconducting nanowire single photon detectors fabricated from an amorphous Mo{sub 0.75}Ge{sub 0.25} thin film

    Energy Technology Data Exchange (ETDEWEB)

    Verma, V. B.; Lita, A. E.; Vissers, M. R.; Marsili, F.; Pappas, D. P.; Mirin, R. P.; Nam, S. W. [National Institute of Standards and Technology, 325 Broadway, Boulder, Colorado 80305 (United States)

    2014-07-14

    We present the characteristics of superconducting nanowire single photon detectors (SNSPDs) fabricated from amorphous Mo{sub 0.75}Ge{sub 0.25} thin-films. Fabricated devices show a saturation of the internal detection efficiency at temperatures below 1 K, with system dark count rates below 500 cps. Operation in a closed-cycle cryocooler at 2.5 K is possible with system detection efficiencies exceeding 20% for SNSPDs which have not been optimized for high detection efficiency. Jitter is observed to vary between 69 ps at 250 mK and 187 ps at 2.5 K using room temperature amplifiers.

  7. Fabrication of flexible oriented magnetic thin films with large in-plane uniaxial anisotropy by roll-to-roll nanoimprint lithography

    Science.gov (United States)

    Thantirige, Rukshan M.; John, Jacob; Pradhan, Nihar R.; Carter, Kenneth R.; Tuominen, Mark T.

    2016-06-01

    Here, we report wafer scale fabrication of densely packed Fe nanostripe-based magnetic thin films on a flexible substrate and their magnetic anisotropy properties. We find that Fe nanostripes exhibit large in-plane uniaxial anisotropy and nearly square hysteresis loops with energy products (BHmax) exceeding 3 MGOe at room temperature. High density Fe nanostripes were fabricated on 70 nm flexible polyethylene terephthalate (PET) gratings, which were made by a roll-to-roll (R2R) UV nanoimprint lithography technique. We observed large in-plane uniaxial anisotropies along the long dimension of nanostripes that can be attributed to the shape. Temperature dependent hysteresis measurements confirm that the magnetization reversal is driven by non-coherent rotation reversal processes.

  8. Effect of In Situ Thermal Annealing Process on Structural, Optical and Electrical Properties of CdSCdTe Thin-Film Solar Cells Fabricated by Pulsed Laser Deposition

    Science.gov (United States)

    Al-mebir, Alaa Ayad Khedhair

    Cadmium Telluride has long been recognized as the second lowest- cost material after Si in the world photovoltaic market, specifically for thin-film solar cells. The two attractive properties of the CdTe are its nearly ideal band gap of ˜1.5 eV for single p-n junction photovoltaic and its high optical absorption coefficient up to 105 cm-1. Therefore, a thickness of ˜1 mum of CdTe can absorb up to 90% of the incident light. The key to high-performance thin film CdTe-based solar cells is controlling microstructure of the CdS/CdTe through obtaining high-quality crystalline CdTe thin films that have low density pinholes and other defects and form high-quality p-n heterojunction interfaces on the CdS or other window layers. Considering these, the relative high temperatures used for CdTe thick film growth may not be suitable in the thin film case due to lack of control in CdTe microstructure evolution. Therefore, development of low-temperature processes for CdTe thin film solar cells is important to achieving a precise control of the CdS/CdTe microstructure and optoelectronic properties. In addition, low temperatures provide benefits in wider selection of substrates especially those for low-cost, flexible solar cells applications. However, the CdS/CdTe solar cells based on thin CdTe films fabricated at low temperature have generally poor performance as a result of increased density of grain boundaries and defects. In order to address this issue, we have developed an in situ thermal annealing process (iTAP) immediately after the CdS/CdTe deposition using Pulsed laser deposition (PLD) at 200 °C and before the common ex situ CdCl2 annealing typically employed for optimization of the CdTe-based solar cells. A systematic study on the microstructure, optical and optoelectronic properties of CdS/CdTe solar cells processed under different iTAP conditions has been carried out. It has been found that these physical properties depend sensitively on the iTAP processing conditions

  9. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T. [Sandia National Laboratories, Albuquerque, NM (United States)] [and others

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  10. Fabrication of highly sensitive and selective H₂ gas sensor based on SnO₂ thin film sensitized with microsized Pd islands.

    Science.gov (United States)

    Nguyen, Van Toan; Nguyen, Viet Chien; Nguyen, Van Duy; Hoang, Si Hong; Hugo, Nguyen; Nguyen, Duc Hoa; Nguyen, Van Hieu

    2016-01-15

    Ultrasensitive and selective hydrogen gas sensor is vital component in safe use of hydrogen that requires a detection and alarm of leakage. Herein, we fabricated a H2 sensing devices by adopting a simple design of planar-type structure sensor in which the heater, electrode, and sensing layer were patterned on the front side of a silicon wafer. The SnO2 thin film-based sensors that were sensitized with microsized Pd islands were fabricated at a wafer-scale by using a sputtering system combined with micro-electronic techniques. The thicknesses of SnO2 thin film and microsized Pd islands were optimized to maximize the sensing performance of the devices. The optimized sensor could be used for monitoring hydrogen gas at low concentrations of 25-250 ppm, with a linear dependence to H2 concentration and a fast response and recovery time. The sensor also showed excellent selectivity for monitoring H2 among other gases, such as CO, NH3, and LPG, and satisfactory characteristics for ensuring safety in handling hydrogen. The hydrogen sensing characteristics of the sensors sensitized with Pt and Au islands were also studied to clarify the sensing mechanisms.

  11. Zapping thin film transistors

    NARCIS (Netherlands)

    Golo-Tosic, N.; Kuper, F.G.; Mouthaan, A.J.

    2002-01-01

    It was expected that hydrogenated amorphous silicon thin film transistors (alpha-Si:H TFTs) behave similarly to crystalline silicon transistors under electrostatic discharge (ESD) stress. It will be disproved in this paper. This knowledge is necessary in the design of the transistors used in a ESD

  12. An iron(II) diketonate–diamine complex as precursor for thin film fabrication by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bratvold, Jon E., E-mail: j.e.bratvold@kjemi.uio.no [Centre for Materials Science and Nanotechnology (SMN)/Department of Chemistry, University of Oslo, PO Box 1033, Blindern, N-0315 Oslo (Norway); Carraro, Giorgio [Department of Chemistry, University of Padova and INSTM, via F. Marzolo 1, I-35131 Padova (Italy); Barreca, Davide [CNR-IENI and INSTM, Department of Chemistry, University of Padova, via F. Marzolo 1, I-35131 Padova (Italy); Nilsen, Ola [Centre for Materials Science and Nanotechnology (SMN)/Department of Chemistry, University of Oslo, PO Box 1033, Blindern, N-0315 Oslo (Norway)

    2015-08-30

    Highlights: • First report of Fe(hfa){sub 2}TMEDA as precursor in ALD and MLD. • Hybrid organic–inorganic films with oxalic acid as co-reactant between 125 and 350 °C. • Surface saturation evidenced by quartz crystal microbalance (QCM) analysis. • XPS confirms complete preservation of Fe(II) from precursor to film. • Deposition of α-Fe{sub 2}O{sub 3} when using ozone as co-reactant. - Abstract: A new divalent Fe precursor has been explored for deposition of iron-containing thin films by atomic layer deposition and molecular layer deposition (ALD/MLD). The Fe(II) β-diketonate-diamine complex, Fe(hfa){sub 2}TMEDA, (hfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedionate, TMEDA = N,N,N′,N′-tetramethylethylenediamine) can be handled in air, and sublimation at 60 °C ensures a satisfactory vaporization rate. The reactivity of the precursor does not allow for direct reaction with water as co-reactant. Nevertheless, it reacts with carboxylic acids, resulting in organic–inorganic hybrid materials, and with ozone, yielding α-Fe{sub 2}O{sub 3}. The divalent oxidation state of iron was maintained during deposition when oxalic acid was used as co-reactant, demonstrating the first preservation of Fe(II) from precursor to film during an MLD process. A self-saturating growth mode was proven by in situ quartz crystal microbalance (QCM) measurements, and the films were further characterized by grazing incidence X-ray diffraction (GIXRD), Fourier transform infrared spectroscopy (FTIR), and X-ray photoelectron spectroscopy (XPS)

  13. Fabrication of Cu(In,Ga)Se{sub 2} thin films by a combination of mechanochemical and screen-printing/sintering processes

    Energy Technology Data Exchange (ETDEWEB)

    Wada, T.; Matsuo, Y.; Nomura, S. [Department of Materials Chemistry, Ryukoku University, Seta, Otsu 520-2194 (Japan); Nakamura, Y.; Miyamura, A. [Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology (Japan); Chiba, Y.; Konagai, M. [Department of Physical Electronics, Tokyo Institute of Technology (Japan); Yamada, A. [Quantum Nanoelectronics Research Center, Tokyo Institute of Technology (Japan)

    2006-09-15

    We prepared fine Cu(In,Ga)Se{sub 2} (CIGS) powder suitable for screen printing using a mechanochemical process. Particulate precursors were deposited in a thin layer by a screen-printing technique, the remaining organic solvent was removed from the screen-printed CIGS film and finally the porous precursor layer was sintered into a dense polycrystalline film by atmospheric-pressure firing. The crystal structure of the film was analyzed by X-ray diffraction and the microstructure was observed in a SEM. The thickness of the film was 5-10 {mu}m with a grain size of about 2 {mu}m. The films were also observed in a TEM. The grain size of the as-prepared powder was less than 1 {mu}m; however, it enlarged to 2-3 {mu}m after firing at 575 C under a Se ambient. Preliminary CIGS solar cells with our standard Al grid/B-doped ZnO/i-ZnO/ CdS/CIGS/Mo/soda-lime glass structure were fabricated. An efficiency of 2.7%, a V{sub oc} of 0.325 V, a J{sub sc} of 28.3 mA/cm{sup 2} and a FF of 0.295 was obtained. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

  14. Low temperature synthesis of radio frequency magnetron sputtered gallium and aluminium co-doped zinc oxide thin films for transparent electrode fabrication

    Science.gov (United States)

    Muchuweni, E.; Sathiaraj, T. S.; Nyakotyo, H.

    2016-12-01

    Gallium and aluminium co-doped zinc oxide (GAZO) thin films were prepared on glass substrates at low temperatures by radio frequency (rf) magnetron sputtering and their physical properties were investigated. All films possessed a hexagonal wurtzite crystal structure with a strong growth orientation along the (0 0 2) c-axis. The (0 0 2) peak intensity and mean crystallite size increased with substrate temperature from room temperature (RT) to 75 °C and then decreased at 100 °C, indicating an improvement in crystallinity up to 75 °C and its deterioration at 100 °C. Scanning electron microscopy (SEM) micrographs revealed the strong dependency of surface morphology on substrate temperature and energy dispersive spectroscopy (EDS) confirmed the incorporation of Ga and Al into the ZnO films. All films exhibited excellent transmittances between 85 and 90% in the visible region and their optical band gap increased from 3.22 eV to 3.28 eV with substrate temperature. The Urbach energy decreased from 194 meV to 168 meV with increasing substrate temperature, indicating a decrease in structural disorders which was consistent with X-ray Diffraction (XRD) analysis. Films deposited at 75 °C exhibited the lowest electrical resistivity (2.4 Ωcm) and highest figure of merit (7.5 × 10-5 Ω-1), proving their potential as candidates for transparent electrode fabrication.

  15. Solution-processed flexible fluorine-doped indium zinc oxide thin-film transistors fabricated on plastic film at low temperature.

    Science.gov (United States)

    Seo, Jin-Suk; Jeon, Jun-Hyuck; Hwang, Young Hwan; Park, Hyungjin; Ryu, Minki; Park, Sang-Hee Ko; Bae, Byeong-Soo

    2013-01-01

    Transparent flexible fluorine-doped indium zinc oxide (IZO:F) thin-film transistors (TFTs) were demonstrated using the spin-coating method of the metal fluoride precursor aqueous solution with annealing at 200°C for 2 hrs on polyethylene naphthalate films. The proposed thermal evolution mechanism of metal fluoride aqueous precursor solution examined by thermogravimetric analysis and Raman spectroscopy can easily explain oxide formation. The chemical composition analysed by XPS confirms that the fluorine was doped in the thin films annealed below 250°C. In the IZO:F thin films, a doped fluorine atom substitutes for an oxygen atom generating a free electron or occupies an oxygen vacancy site eliminating an electron trap site. These dual roles of the doped fluorine can enhance the mobility and improve the gate bias stability of the TFTs. Therefore, the transparent flexible IZO:F TFT shows a high mobility of up to 4.1 cm(2)/V·s and stable characteristics under the various gate bias and temperature stresses.

  16. An iron(II) diketonate-diamine complex as precursor for thin film fabrication by atomic layer deposition

    Science.gov (United States)

    Bratvold, Jon E.; Carraro, Giorgio; Barreca, Davide; Nilsen, Ola

    2015-08-01

    A new divalent Fe precursor has been explored for deposition of iron-containing thin films by atomic layer deposition and molecular layer deposition (ALD/MLD). The Fe(II) β-diketonate-diamine complex, Fe(hfa)2TMEDA, (hfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedionate, TMEDA = N,N,N‧,N‧-tetramethylethylenediamine) can be handled in air, and sublimation at 60 °C ensures a satisfactory vaporization rate. The reactivity of the precursor does not allow for direct reaction with water as co-reactant. Nevertheless, it reacts with carboxylic acids, resulting in organic-inorganic hybrid materials, and with ozone, yielding α-Fe2O3. The divalent oxidation state of iron was maintained during deposition when oxalic acid was used as co-reactant, demonstrating the first preservation of Fe(II) from precursor to film during an MLD process. A self-saturating growth mode was proven by in situ quartz crystal microbalance (QCM) measurements, and the films were further characterized by grazing incidence X-ray diffraction (GIXRD), Fourier transform infrared spectroscopy (FTIR), and X-ray photoelectron spectroscopy (XPS).

  17. Structural and low temperature transport properties of PbBi thin films fabricated by rapid solidification technique

    Science.gov (United States)

    Kuru, Mehmet; Ongun, Erhan; Esad Ozmetin, Ali

    2017-06-01

    In this work, 500 nm thick superconducting α-phase PbBi thin-films were grown by thermal evaporation and quench-condensation mechanism in a vacuum chamber. Thermally-evaporated lead-bismuth vapor condensed on the silicon substrate which was cooled to 77 K by liquid nitrogen (LN2). Titanium-sublimation and a homemade LN2 cold-trap station were utilized to further improve the vacuum conditions. Structural and elemental analyses were conducted using scanning electron microscopy and energy dispersive x-ray spectroscopy techniques. The alloy content of the resulting PbBi film (78.22 at% Pb and 21.78 at% Bi) was found similar to that of the source alloy (82 at% Pb and 18 at% Bi) as the vapor pressure of bismuth lies close to that of lead. To reveal the transport characteristics of superconducting PbBi film, low temperature DC transport measurements were conducted by means of a four-probe method in a closed cycle dry cryostat cryogenics system. It was revealed that the superconductivity transition temperature of PbBi film decreased from 7.74 K to 5.95 K under increasing H-fields from 0 kOe to 7 kOe, respectively. Based on the R-T measurements, the electrical resistivity of quench-condensed PbBi film was calculated at different temperatures of 300 K, 77 K and 7.74 K, which were found as 9.11× {{10}-7} \\text{ohm}\\cdot \\text{m} , 4.43× {{10}-7} \\text{ohm}\\cdot \\text{m} and 1.95× {{10}-7} \\text{ohm}\\cdot \\text{m} , respectively. The residual resistance ratio value, which gives a rough estimation about the quality and performance of the superconducting film, was calculated as 4.65 indicating a reasonably quality film formation.

  18. Novel thin-film CuInSe{sub 2} fabrication. Annual subcontract report, 1 March 1990--30 April 1991

    Energy Technology Data Exchange (ETDEWEB)

    Mooney, G.D.; Hermann, A.M. [Colorado Univ., Boulder, CO (United States)

    1992-03-01

    This report describes research in Rapid Thermal Processing (RTP), a process that allows the formation of CuInSe{sub 2} without the use of H{sub 2}Se. RTP is a well-established method of rapidly achieving temperatures necessary to melt and recrystallize materials such as Si and and silicides. RTP processes can rapidly and uniformly heat large surface areas to hundreds of degrees Celsius. RTP is the most promising method of rapid recrystallization studied to date, being readily scalable from the research to the production level. The approach to the experiment was divided into two sections: (1) fabricating the precursor film and (2) processing the precursor film. The objective of the first phase of the work was to fabricate the thin films by RTP, then fully characterize them, to demonstrate the viability of the process as a method by which to make device-quality CuInSe{sub 2}. The second phase was to demonstrate that material made by this method could be used to make an active photovoltaic device. 24 refs.

  19. Melt-mediated coalescence of solution-deposited ZnO nanoparticles by excimer laser annealing for thin-film transistor fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Pan, Heng; Misra, Nipun; Ko, Seung H.; Grigoropoulos, Costas P. [University of California, Laser Thermal Laboratory, Department of Mechanical Engineering, Berkeley, CA (United States); Miller, Nate; Haller, Eugene E.; Dubon, Oscar [University of California, Department of Materials Science and Engineering, Berkeley, CA (United States); Lawrence Berkeley National Laboratory, Materials Sciences Division, Berkeley, CA (United States)

    2009-01-15

    Nanoparticle solutions are considered promising for realizing low cost printable high performance flexible electronics. In this letter, excimer laser annealing (ELA) was employed to induce melting of solution-deposited ZnO nanoparticles and form electrically conductive porous films. The properties of the films were characterized by scanning electron microscopy, high-resolution transmission electron microscopy, DC conductance, and photoluminescence measurements. Thin-film field-effect transistors have been fabricated by ELA without the use of conventional vacuum or any high temperature thermal annealing processes. The transistors show n-type accumulation mode behavior with mobility greater than 0.1 cm{sup 2}/V s and current on/off ratios of more than 10{sup 4}. Optimization and control of the laser processing parameters minimized thermal impact on the substrate. This technique can be beneficial in the fabrication of metal oxide based electronics on heat sensitive flexible plastic substrates using low-cost, large-area solution processing combined with direct printing techniques. (orig.)

  20. [Spectral emissivity of thin films].

    Science.gov (United States)

    Zhong, D

    2001-02-01

    In this paper, the contribution of multiple reflections in thin film to the spectral emissivity of thin films of low absorption is discussed. The expression of emissivity of thin films derived here is related to the thin film thickness d and the optical constants n(lambda) and k(lambda). It is shown that in the special case d-->infinity the emissivity of thin films is equivalent to that of the bulk material. Realistic numerical and more precise general numerical results for the dependence of the emissivity on d, n(lambda) and k(lambda) are given.

  1. Thin film superconductor magnetic bearings

    Science.gov (United States)

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  2. RETRACTED: P-type Zno thin films fabricated by Al-N co-doping method at different substrate temperature

    Science.gov (United States)

    Yuan, Guodong; Ye, Zhizhen; Qian, Qing; Zhu, Liping; Huang, Jingyun; Zhao, Binghui

    2005-01-01

    This article has been retracted at the request of the Editor-in-Chief. Please see Elsevier Policy on Article Withdrawal ( http://www.elsevier.com/locate/withdrawalpolicy). The editors and publisher would like to confirm the retraction of this paper at the request of the author Guodong Yuan. Reason: The SIMS profile published in this paper had already been included in articles published in Mater. Lett., 58 (2004) 3741-3744, and Thin Solid Films, 484 (2005) 420-425 describing a sample prepared under different conditions. The author did not notify either the Journal of Crystal Growth Editors or the coauthors of this fact. The author apologizes sincerely to the readers, referees, and Editors for violating the guidelines of ethical publication.Also the author apologizes to the coauthors for mishandling of the manuscript.

  3. Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique.

    Science.gov (United States)

    Li, Huijin; Han, Dedong; Liu, Liqiao; Dong, Junchen; Cui, Guodong; Zhang, Shengdong; Zhang, Xing; Wang, Yi

    2017-12-01

    This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere at different temperatures have also been investigated. The ALD bi-layer channel AZO/ZnO TFTs annealed in dry O2 at 300 °C exhibit a low leakage current of 2.5 × 10(-13)A, I on/I off ratio of 1.4 × 10(7), subthreshold swing (SS) of 0.23 V/decade, and high transmittance. The enhanced performance obtained from the bi-layer channel AZO/ZnO TFT devices is explained by the inserted AZO front channel layer playing the role of the mobility booster.

  4. Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique

    Science.gov (United States)

    Li, Huijin; Han, Dedong; Liu, Liqiao; Dong, Junchen; Cui, Guodong; Zhang, Shengdong; Zhang, Xing; Wang, Yi

    2017-03-01

    This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere at different temperatures have also been investigated. The ALD bi-layer channel AZO/ZnO TFTs annealed in dry O2 at 300 °C exhibit a low leakage current of 2.5 × 10-13A, I on/ I off ratio of 1.4 × 107, subthreshold swing (SS) of 0.23 V/decade, and high transmittance. The enhanced performance obtained from the bi-layer channel AZO/ZnO TFT devices is explained by the inserted AZO front channel layer playing the role of the mobility booster.

  5. Enhanced Performance in Al-Doped ZnO Based Transparent Flexible Transparent Thin-Film Transistors Due to Oxygen Vacancy in ZnO Film with Zn-Al-O Interfaces Fabricated by Atomic Layer Deposition.

    Science.gov (United States)

    Li, Yang; Yao, Rui; Wang, Huanhuan; Wu, Xiaoming; Wu, Jinzhu; Wu, Xiaohong; Qin, Wei

    2017-04-05

    Highly conductive and optical transparent Al-doped ZnO (AZO) thin film composed of ZnO with a Zn-Al-O interface was fabricated by thermal atomic layer deposition (ALD) method. The as-prepared AZO thin film exhibits excellent electrical and optical properties with high stability and compatibility with temperature-sensitive flexible photoelectronic devices; film resistivity is as low as 5.7 × 10(-4) Ω·cm, the carrier concentration is high up to 2.2 × 10(21) cm(-3). optical transparency is greater than 80% in a visible range, and the growth temperature is below 150 °C on the PEN substrate. Compared with the conventional AZO film containing by a ZnO-Al2O3 interface, we propose that the underlying mechanism of the enhanced electrical conductivity for the current AZO thin film is attributed to the oxygen vacancies deficiency derived from the free competitive growth mode of Zn-O and Al-O bonds in the Zn-Al-O interface. The flexible transparent transistor based on this AZO electrode exhibits a favorable threshold voltage and Ion/Ioff ratio, showing promising for use in high-resolution, fully transparent, and flexible display applications.

  6. Carbon Superatom Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Canning, A. [Cray Research, PSE, EPFL, 1015 Lausanne (Switzerland); Canning, A.; Galli, G. [Institut Romand de Recherche Numerique en Physique des Materiaux (IRRMA), IN-Ecublens, 1015 Lausanne (Switzerland); Kim, J. [Department of Physics, The Ohio State University, Columbus, Ohio 43210 (United States)

    1997-06-01

    We report on quantum molecular dynamics simulations of C{sub 28} deposition on a semiconducting surface. Our results show that under certain deposition conditions C{sub 28} {close_quote}s act as building blocks on a nanometer scale to form a thin film of nearly defect-free molecules. The C{sub 28} {close_quote}s behave as carbon superatoms, with the majority of them being threefold or fourfold coordinated, similar to carbon atoms in amorphous systems. The microscopic structure of the deposited film supports recent suggestions about the stability of a new form of carbon, the hyperdiamond solid. {copyright} {ital 1997} {ital The American Physical Society}

  7. Printable CIGS thin film solar cells

    Science.gov (United States)

    Fan, Xiaojuan

    2014-03-01

    Among the various thin film solar cells in the market, CuInGaSe thin film cells have been considered as the most promising alternatives to silicon solar cells because of their high photo-electricity efficiency, reliability, and stability. However, many fabrication of CIGS thin film are based on vacuum processes such as evaporation sputtering techniques which are not cost efficient. This work develops a method using paste or ink liquid spin-coated on glass that would be to conventional ways in terms of cost effective, non-vacuum needed, quick processing. A mixture precursor was prepared by dissolving appropriate amounts of chemicals. After the mixture solution was cooled, a viscous paste prepared and ready for spin-coating process. A slight bluish CIG thin film substrate was then put in a tube furnace with evaporation of metal Se by depositing CdS layer and ZnO nanoparticle thin film coating to a solar cell fabrication. Structure, absorption spectrum, and photo-conversion efficiency for the as-grown CIGS thin film solar cell under study.

  8. Photophysical properties of Alq3 thin films

    Science.gov (United States)

    Zawadzka, A.; Płóciennik, P.; Strzelecki, J.; Łukasiak, Z.; Sahraoui, B.

    2013-11-01

    This work contains investigation results of the photophysical properties of aluminum (III) tris(8-hydroxyquinoline) thin films. The Alq3 thin films were successfully fabricated by Physical Vapor Deposition technique. The films were grown on transparent: (quartz and glass) and semiconductor (n-type silica) substrates kept at room temperature during the deposition process. Selected films were annealed after fabrication in ambient atmosphere for 12 h at the temperature equal to 100 °C and 150 °C. Morphology of the films was investigated by AFM technique. Photophysical properties were characterized via photoluminescence, transmission, second and third harmonic generation measurements. The thin films exhibit high structural quality regardless of the annealing process, but the stability of the film can be improved by using an appropriate temperature during the annealing process. Photoluminescence of Alq3 films obtained in air were efficient and stable. The measurements of transmission, SHG and THG spectra allowed us to determine optical constant of the films. We find that the photophysical properties were strictly connected with the morphology and the annealing process significantly changes the structural properties of the films.

  9. Fabrication and characterization of a diluted magnetic semiconducting TM co-doped Al:ZnO (TM=Co, Ni) thin films by sol-gel spin coating method.

    Science.gov (United States)

    Siddheswaran, R; Mangalaraja, R V; Tijerina, Eduardo P; Menchaca, J-Luis; Meléndrez, M F; Avila, Ricardo E; Jeyanthi, C Esther; Gomez, M E

    2013-04-01

    Effect of transition metal oxides (TM=Co and Ni) co-doping on the crystallinity, surface morphology, grain growth and magnetic properties of nanostructure Al:ZnO thin films has been studied for diluted magnetic semiconductor applications. Al:ZnO thin films were fabricated by sol-gel spin coating on p-type Si (100) substrates. Fabrication of hexagonal wurtzite TM co-doped Al:ZnO thin films having thickness 2μm was successfully achieved. The Raman spectra of the TM co-doped Al:ZnO thin films showed a broad vibrational mode in the range 520-540cm(-1) due to crystal defects created co-doping elements in the ZnO host lattice. Scanning electron microscopy (SEM) revealed that the films are composed of uniform size, polycrystalline dense ZnO particles with defect free, smooth surfaces. The surface roughness was further verified with atomic force microscopy (AFM). The energy dispersive X-ray spectroscopic analysis (EDX) confirmed the stoichiometric compositions of the TM co-doped Al:ZnO films. The magnetic measurements exhibited that the Co, Al:ZnO and Ni, Al:ZnO thin films were ferromagnetic at room temperature.

  10. Research on Raman-scattering and Fabrication of Multilayer Thin Film with Different Structures and Components Based on Pt/Ti/Si3N4/SiO2/Si Substrate

    Institute of Scientific and Technical Information of China (English)

    Qiu-lin Tan; Wen-dong Zhang; Chen-yang Xue; Jun Liu; Jun-hong Li; Ji-jun Xiong

    2009-01-01

    Using the same conditions and various starting materials, such as lead acetate trihydrate, tetrabulyl titanate, zirconium n-butoxide, and acetylacetone, two kinds of solid precursors, lead zirconate titanate (PZT, Zr/Ti=15/85) and lead titanate (PT), were fabricated. With three different combinations, namely, PZT, PT/PZT-PZT/PT, and PT/PZT/-/PZT/PT, three multilayer thin films were deposited on three Pt-Ti-Si3N4-SiO2-Si substrates by a modified sol-gel process. The fabrication process of the thin films is discussed in detail. We found that there is a large built-in stress in the thin film, which can be diminished by annealing at 600 ℃, when the gel is turned into solid material through drying and sintering. The Raman scattering spectra of the films with different compositions and structures were investigated. With the help of X-ray diffraction (XRD) analyzer and Raman scattering spectra analyzer, it was found that the thin films with the PT/PZT-PZT/PT structure have reasonable crystallinity and less residual stress. XRD testing shows that the diffraction pattern of the multilayer film results from the superimposition of the PZT and PT patterns. This leads to the conclusion that the PT/PZT-PZT/PT multilayer thin film has a promising future in pyroelectric infrared detectors with high performance.

  11. Biomimetic thin film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.

    1995-09-01

    Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

  12. Highly stretchable wrinkled gold thin film wires

    Science.gov (United States)

    Kim, Joshua; Park, Sun-Jun; Nguyen, Thao; Chu, Michael; Pegan, Jonathan D.; Khine, Michelle

    2016-02-01

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.

  13. Highly stretchable wrinkled gold thin film wires

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Joshua, E-mail: joshuk7@uci.edu; Park, Sun-Jun; Nguyen, Thao [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Chu, Michael [Department of Biomedical Engineering, University of California, Irvine, California 92697 (United States); Pegan, Jonathan D. [Department of Materials and Manufacturing Technology, University of California, Irvine, California 92697 (United States); Khine, Michelle, E-mail: mkhine@uci.edu [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Department of Biomedical Engineering, University of California, Irvine, California 92697 (United States)

    2016-02-08

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.

  14. Thin film processes

    CERN Document Server

    Vossen, John L

    1978-01-01

    Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process.

  15. Direct fabrication of thin film gold resistance temperature detection sensors on a curved surface using a flexible dry film photoresist and their calibration up to 450 °C

    Science.gov (United States)

    Ahn, C. H.; Park, H. W.; Kim, H. H.; Park, S. H.; Son, C.; Kim, M. C.; Lee, J. H.; Go, J. S.

    2013-06-01

    High efficiency heat exchangers, such as intercoolers and recuperators, are composed of complex and compact structures to enhance heat transfer. This limits the installation of conventional temperature sensors to measure the temperature inside the heat exchanger without flow disturbance. To overcome this limitation, we have developed a direct patterning method in which metal is sputtered onto a curved surface using film photoresist and the fabrication of thin film Au resistance temperature detection (RTD) temperature sensors. A photosensitive film resist has been used to overcome the difficulty of 3-dimensional photolithography on a curved surface. The film resist after 2-dimensional photolithography is laminated over an alumina rod which is deposited with Au as an RTD sensing material. The Au metal is etched chemically, and the film resist is removed to form the thin film Au-RTD temperature sensors. They are calibrated by measuring the resistance change against temperature in a thermally controlled furnace. The second order polynomial fit shows good agreement with the measured temperatures with a standard deviation of 0.02 for the temperature range of 20-450 °C. Finally, the performance of the Au-RTD temperature sensors was evaluated.

  16. Handbook of thin film technology

    CERN Document Server

    Frey, Hartmut

    2015-01-01

    “Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

  17. Fabrication of Pt/ITO Thin-Film Thermocouple on Metal Substrates%金属基Pt/ITO薄膜热电偶的制备

    Institute of Scientific and Technical Information of China (English)

    赵文雅; 蒋洪川; 陈寅之; 张万里; 刘兴钊; 彭少龙; 唐磊

    2013-01-01

    采用多层膜结构制备了金属基Pt/ITO薄膜热电偶,薄膜热电偶由Ni基合金基片、NiCrAlY过渡层、热生长Al2O3层、Al2O3绝缘层、Pt/ITO功能层和Al2O3保护层构成.静态标定结果表明:样品的平均塞贝克系数为107.45 μV/℃.测试温度可达到1000℃.时效处理可以有效提高薄膜热电偶的输出热电势.%The Pt/ITO thin-film thermocouples with multilayer structure are fabricated on metal substrates. The thin-film thermocouple is composed of Ni-base alloy substrate, NiCrAlY buffer layer, thermal growth A12O3 layer, A12O3 insulating layer, Pt/ITO function layer and A12O3 protective layer. The results of the static calibration of the sample show that the average Seebeck coefficient is about 107.45 μV /℃. The test temperature can be up to 1000℃. The thermoelectric power of the sample can be effectively improved by aging treatment.

  18. Fabrication of a nanostructure thin film on the gold electrode using continuous pulsed-potential technique and its application for the electrocatalytic determination of metronidazole

    Energy Technology Data Exchange (ETDEWEB)

    Rezaei, B., E-mail: rezaei@cc.iut.ac.i [Department of Chemistry, Isfahan University of Technology, Isfahan, 84156-83111 (Iran, Islamic Republic of); Damiri, S. [Department of Chemistry, Isfahan University of Technology, Isfahan, 84156-83111 (Iran, Islamic Republic of)

    2010-02-01

    This paper demonstrates a new and simple approach based on a continuous pulsed-potential (CPP) method for the preparation of reproducible nanostructure and nanoporous thin film on the polycrystalline gold electrodes. The fabrication process involves pulsed electrochemical oxidation and reduction of gold electrode in the sulfuric acid solution without using additional reagents. Effect of various parameters including pulse height, pulse time, pulse number and relaxation time on the enhancing of hexacyanoferrate (HCF) redox behaviour, as a probe, were investigated and optimized. Electrochemical, scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies show the formation of a nanoporous thin film and sharp nanostructure edges on the gold electrode that considerably enhances electrocatalysis of HCF and provides useful conditions for the electroanalysis by the modified electrode. In addition, the electrocatalytic behaviour of this modified electrode was exploited as a sensitive detection system for the determination of metronidazole in pharmaceutical and human urine samples, by using cyclic voltammetry (CV) and hydrodynamic methods. Under optimized conditions, this method shows linear dynamic ranges of 0.5-10.0 and 20.0-800.0 muM with the calculated detection limit (S/N = 3) of 0.15 muM and a precision of <5%.

  19. Fabrication of p-type CuO thin films using chemical bath deposition technique and their solar cell applications with Si nanowires

    Science.gov (United States)

    Akgul, Funda Aksoy; Akgul, Guvenc

    2017-02-01

    Recently, CuO has attracted much interest owing to its suitable material properties, inexpensive fabrication cost and potential applications for optoelectronic devices. In this study, CuO thin films were deposited on glass substrates using chemical bath deposition technique and post-deposition annealing effect on the properties of the prepared samples were investigated. p-n heterojunction solar cells were then constructed by coating of p-type CuO films onto the vertically well-aligned n-type Si nanowires synthesized through MACE method. Photovoltaic performance of the fabricated devices were determined with current-voltage (I-V) measurements under AM 1.5 G illumination. The optimal short-circuit current density, open-circuit voltage, fill factor and power conversion efficiency were found to be 3.2 mA/cm-2, 337 mV, 37.9 and 0.45%, respectively. The observed performance clearly indicates that the investigated device structure could be a promising candidate for high-performance low-cost new-generation photovoltaic diodes.

  20. Microwave-assisted low temperature fabrication of ZnO thin film electrodes for solar energy harvesting

    Energy Technology Data Exchange (ETDEWEB)

    Nirmal Peiris, T.A.; Sagu, Jagdeep S.; Hazim Yusof, Y.; Upul Wijayantha, K.G., E-mail: U.Wijayantha@lboro.ac.uk

    2015-09-01

    Metallic Zn thin films were electrodeposited on fluorine-doped tin oxide (FTO) glass substrates and oxidized under air by conventional radiant and microwave post-annealing methods to obtain ZnO thin film electrodes. The temperature of each post-annealing method was varied systematically and the photoelectrochemical (PEC) performance of electrodes was evaluated. The best photocurrent density achieved by the conventional radiant annealing method at 425 °C for 15 min was 93 μA cm{sup −2} at 1.23 V vs. NHE and the electrode showed an incident photon-to-electron conversion efficiency (IPCE) of 28.2%. X-ray diffractogram of this electrode showed that the oxidation of Zn to ZnO was not completed during the radiant annealing process as evident by the presence of metallic Zn in the electrode. For the electrode oxidized from Zn to ZnO under microwave irradiation, a photocurrent of 130 μA cm{sup −2} at 1.23 V vs. NHE and IPCE of 35.6% was observed after annealing for just 3 min, during which the temperature reached 250 °C. The photocurrent was 40% higher for the microwave annealed sample; this increase was attributed to higher surface area by preserving the nanostructure, confirmed by SEM surface topographical analysis, and better conversion yields to crystalline ZnO. Overall, it was demonstrated that oxidation of Zn to ZnO can be accomplished by microwave annealing five times faster than that of conventional annealing, thus resulting in a ~ 75% power saving. This study shows that microwave processing of materials offers significant economic and performance advantages for industrial scale up. - Highlights: • Conversion of Zn to ZnO by microwave and radiant annealing was conducted. • Microwave conversion was 5 times faster compared to radiant annealing. • Photoelectrochemical performance of microwave annealed ZnO was 40% higher. • Microwave annealing results in a 75% energy saving.

  1. Fabrication of Au-Pd Core-shell Nanoparticles using Au Thin-Film Dewetting at High Temperature and Chemical Synthesis Methods

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Min-Gyu; Lee, Hye-Jung; Oh, Yong-Jun [Hanbat National Univ., Daejeon (Korea, Republic of)

    2016-07-15

    Au-Pd bimetallic nanoparticles (NPs) have received a lot of attention in the fields of catalysts and hydrogen sensors. In this study, Au-Pd core-shell NP arrays were successfully fabricated using two steps: formation of the ordered array of Au NPs cores via solid-state dewetting of a Au thin film on a topographic silica substrate, and Pd shell formation via chemical synthesis using two different surfactants (CTAB and CTAC). Using the CTAB surfactant in particular, a 2-D composite structure comprised of an ordered array of Au-Pd NPs, with smaller Pd NPs on the nanoscopic gaps between the Au-Pd NPs, could be formed. This structure is expected to have potential application in resistance-base hydrogen sensors.

  2. Fabrication and characterization of Al2O3 /Si composite nanodome structures for high efficiency crystalline Si thin film solar cells

    Science.gov (United States)

    Zhang, Ruiying; Zhu, Jian; Zhang, Zhen; Wang, Yanyan; Qiu, Bocang; Liu, Xuehua; Zhang, Jinping; Zhang, Yi; Fang, Qi; Ren, Zhong; Bai, Yu

    2015-12-01

    We report on our fabrication and characterization of Al2O3/Si composite nanodome (CND) structures, which is composed of Si nanodome structures with a conformal cladding Al2O3 layer to evaluate its optical and electrical performance when it is applied to thin film solar cells. It has been observed that by application of Al2O3thin film coating using atomic layer deposition (ALD) to the Si nanodome structures, both optical and electrical performances are greatly improved. The reflectivity of less than 3% over the wavelength range of from 200 nm to 2000 nm at an incident angle from 0° to 45° is achieved when the Al2O3 film is 90 nm thick. The ultimate efficiency of around 27% is obtained on the CND textured 2 μm-thick Si solar cells, which is compared to the efficiency of around 25.75% and 15% for the 2 μm-thick Si nanodome surface-decorated and planar samples respectively. Electrical characterization was made by using CND-decorated MOS devices to measure device's leakage current and capacitance dispersion. It is found the electrical performance is sensitive to the thickness of the Al2O3 film, and the performance is remarkably improved when the dielectric layer thickness is 90 nm thick. The leakage current, which is less than 4x10-9 A/cm2 over voltage range of from -3 V to 3 V, is reduced by several orders of magnitude. C-V measurements also shows as small as 0.3% of variation in the capacitance over the frequency range from 10 kHz to 500 kHz, which is a strong indication of surface states being fully passivated. TEM examination of CND-decorated samples also reveals the occurrence of SiOx layer formed between the interface of Si and the Al2O3 film, which is thin enough that ensures the presence of field-effect passivation, From our theoretical and experimental study, we believe Al2O3 coated CND structures is a truly viable approach to achieving higher device efficiency.

  3. Fabrication and characterization of Al{sub 2}O{sub 3} /Si composite nanodome structures for high efficiency crystalline Si thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Ruiying, E-mail: ryzhang2008@sinano.ac.cn [Key lab of nanodevices and applications, Chinese Academy of Sciences, Division of nano-devices and related materials, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123 (China); State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 China (China); Zhu, Jian; Zhang, Zhen; Wang, Yanyan; Qiu, Bocang [Key lab of nanodevices and applications, Chinese Academy of Sciences, Division of nano-devices and related materials, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123 (China); Liu, Xuehua; Zhang, Jinping; Zhang, Yi [Platform for Characterization & Test, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123 (China); Fang, Qi; Ren, Zhong [Oxford Instruments Plasma Technology, Yatton, Bristol, BS49 4AP (United Kingdom); Bai, Yu [School of Nano-Science and Nano-Engineering, Xi’an Jiaotong University, Suzhou, 215123 (China)

    2015-12-15

    We report on our fabrication and characterization of Al{sub 2}O{sub 3}/Si composite nanodome (CND) structures, which is composed of Si nanodome structures with a conformal cladding Al{sub 2}O{sub 3} layer to evaluate its optical and electrical performance when it is applied to thin film solar cells. It has been observed that by application of Al{sub 2}O{sub 3}thin film coating using atomic layer deposition (ALD) to the Si nanodome structures, both optical and electrical performances are greatly improved. The reflectivity of less than 3% over the wavelength range of from 200 nm to 2000 nm at an incident angle from 0° to 45° is achieved when the Al{sub 2}O{sub 3} film is 90 nm thick. The ultimate efficiency of around 27% is obtained on the CND textured 2 μm-thick Si solar cells, which is compared to the efficiency of around 25.75% and 15% for the 2 μm-thick Si nanodome surface-decorated and planar samples respectively. Electrical characterization was made by using CND-decorated MOS devices to measure device’s leakage current and capacitance dispersion. It is found the electrical performance is sensitive to the thickness of the Al{sub 2}O{sub 3} film, and the performance is remarkably improved when the dielectric layer thickness is 90 nm thick. The leakage current, which is less than 4x10{sup −9} A/cm{sup 2} over voltage range of from -3 V to 3 V, is reduced by several orders of magnitude. C-V measurements also shows as small as 0.3% of variation in the capacitance over the frequency range from 10 kHz to 500 kHz, which is a strong indication of surface states being fully passivated. TEM examination of CND-decorated samples also reveals the occurrence of SiO{sub x} layer formed between the interface of Si and the Al{sub 2}O{sub 3} film, which is thin enough that ensures the presence of field-effect passivation, From our theoretical and experimental study, we believe Al{sub 2}O{sub 3} coated CND structures is a truly viable approach to achieving higher device

  4. Fabrication and characterization of Al2O3 /Si composite nanodome structures for high efficiency crystalline Si thin film solar cells

    Directory of Open Access Journals (Sweden)

    Ruiying Zhang

    2015-12-01

    Full Text Available We report on our fabrication and characterization of Al2O3/Si composite nanodome (CND structures, which is composed of Si nanodome structures with a conformal cladding Al2O3 layer to evaluate its optical and electrical performance when it is applied to thin film solar cells. It has been observed that by application of Al2O3thin film coating using atomic layer deposition (ALD to the Si nanodome structures, both optical and electrical performances are greatly improved. The reflectivity of less than 3% over the wavelength range of from 200 nm to 2000 nm at an incident angle from 0° to 45° is achieved when the Al2O3 film is 90 nm thick. The ultimate efficiency of around 27% is obtained on the CND textured 2 μm-thick Si solar cells, which is compared to the efficiency of around 25.75% and 15% for the 2 μm-thick Si nanodome surface-decorated and planar samples respectively. Electrical characterization was made by using CND-decorated MOS devices to measure device’s leakage current and capacitance dispersion. It is found the electrical performance is sensitive to the thickness of the Al2O3 film, and the performance is remarkably improved when the dielectric layer thickness is 90 nm thick. The leakage current, which is less than 4x10−9 A/cm2 over voltage range of from -3 V to 3 V, is reduced by several orders of magnitude. C-V measurements also shows as small as 0.3% of variation in the capacitance over the frequency range from 10 kHz to 500 kHz, which is a strong indication of surface states being fully passivated. TEM examination of CND-decorated samples also reveals the occurrence of SiOx layer formed between the interface of Si and the Al2O3 film, which is thin enough that ensures the presence of field-effect passivation, From our theoretical and experimental study, we believe Al2O3 coated CND structures is a truly viable approach to achieving higher device efficiency.

  5. Thin-Film Solid Oxide Fuel Cells

    Science.gov (United States)

    Chen, Xin; Wu, Nai-Juan; Ignatiev, Alex

    2009-01-01

    The development of thin-film solid oxide fuel cells (TFSOFCs) and a method of fabricating them have progressed to the prototype stage. This can result in the reduction of mass, volume, and the cost of materials for a given power level.

  6. Fabrication of mechanically robust, self-cleaning and optically high-performance hybrid thin films by SiO2&TiO2 double-shelled hollow nanospheres

    Science.gov (United States)

    Yao, Lin; He, Junhui; Geng, Zhi; Ren, Tingting

    2015-07-01

    Low-cost antireflection (AR) thin films on large-area optical surfaces are important for high-performance optical devices, display devices and photovoltaic cells. In the current work, SiO2&TiO2 double-shell hollow nanospheres (DSHNs) were designed, synthesized and utilized as building blocks for fabricating multifunctional AR thin films. By optimizing the porosity of SiO2&TiO2 DSHN and thin film structure, substrates with DSHN thin films attained transmittance as high as 99.4% and average transmittance up to 98.5% in the visible region. The nano-composite SiO2-TiO2 films exhibited intrinsic superhydrophilicity, anti-fogging and high photocatalytic activity. Tape peeling test, sponge washing test, and high temperature and moisture proof test showed favorable robustness and functional durability of the thin films, which make them extremely attractive for applications in lenses, photovoltaic cells and windows of high-rise buildings.Low-cost antireflection (AR) thin films on large-area optical surfaces are important for high-performance optical devices, display devices and photovoltaic cells. In the current work, SiO2&TiO2 double-shell hollow nanospheres (DSHNs) were designed, synthesized and utilized as building blocks for fabricating multifunctional AR thin films. By optimizing the porosity of SiO2&TiO2 DSHN and thin film structure, substrates with DSHN thin films attained transmittance as high as 99.4% and average transmittance up to 98.5% in the visible region. The nano-composite SiO2-TiO2 films exhibited intrinsic superhydrophilicity, anti-fogging and high photocatalytic activity. Tape peeling test, sponge washing test, and high temperature and moisture proof test showed favorable robustness and functional durability of the thin films, which make them extremely attractive for applications in lenses, photovoltaic cells and windows of high-rise buildings. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr02467f

  7. Scalable fabrication of SnO{sub 2} thin films sensitized with CuO islands for enhanced H{sub 2}S gas sensing performance

    Energy Technology Data Exchange (ETDEWEB)

    Van Toan, Nguyen; Chien, Nguyen Viet; Van Duy, Nguyen [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST), Dai Co Viet Road, Hanoi (Viet Nam); Vuong, Dang Duc; Lam, Nguyen Huu [School of Engineering Physics (SEP), Hanoi University of Science and Technology (HUST), No. 1, Dai Co Viet Road, Hanoi (Viet Nam); Hoa, Nguyen Duc [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST), Dai Co Viet Road, Hanoi (Viet Nam); Van Hieu, Nguyen, E-mail: hieu@itims.edu.vn [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST), Dai Co Viet Road, Hanoi (Viet Nam); Chien, Nguyen Duc, E-mail: chien.nguyenduc@hust.edu.vn [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST), Dai Co Viet Road, Hanoi (Viet Nam); School of Engineering Physics (SEP), Hanoi University of Science and Technology (HUST), No. 1, Dai Co Viet Road, Hanoi (Viet Nam)

    2015-01-01

    Highlights: • CuO island-sensitized SnO{sub 2} thin film sensors were fabricated at wafer-scale. • SnO{sub 2}–CuO island sensors significantly enhanced H{sub 2}S gas response. • The thickness of CuO islands strongly affected on H{sub 2}S gas sensing performance. - Abstract: The detection of H{sub 2}S, an important gaseous molecule that has been recently marked as a highly toxic environmental pollutant, has attracted increasing attention. We fabricate a wafer-scale SnO{sub 2} thin film sensitized with CuO islands using microelectronic technology for the improved detection of the highly toxic H{sub 2}S gas. The SnO{sub 2}–CuO island sensor exhibits significantly enhanced H{sub 2}S gas response and reduced operating temperature. The thickness of CuO islands strongly influences H{sub 2}S sensing characteristics, and the highest H{sub 2}S gas response is observed with 20 nm-thick CuO islands. The response value (R{sub a}/R{sub g}) of the SnO{sub 2}–CuO island sensor to 5 ppm H{sub 2}S is as high as 128 at 200 °C and increases nearly 55-fold compared with that of the bare SnO{sub 2} thin film sensor. Meanwhile, the response of the SnO{sub 2}–CuO island sensor to H{sub 2} (250 ppm), NH{sub 3} (250 ppm), CO (250 ppm), and LPG (1000 ppm) are low (1.3–2.5). The enhanced gas response and selectivity of the SnO{sub 2}–CuO island sensor to H{sub 2}S gas is explained by the sensitizing effect of CuO islands and the extension of electron depletion regions because of the formation of p–n junctions.

  8. Investigation on Silicon Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The preparation, current status and trends are investigated for silicon thin film solar cells. The advantages and disadvantages of amorphous silicon thin film, polycrystalline silicon thin film and mono-crystalline silicon thin film solar cells are compared. The future development trends are pointed out. It is found that polycrystalline silicon thin film solar cells will be more promising for application with great potential.

  9. Magnetoelectric thin film composites with interdigital electrodes

    Science.gov (United States)

    Piorra, A.; Jahns, R.; Teliban, I.; Gugat, J. L.; Gerken, M.; Knöchel, R.; Quandt, E.

    2013-07-01

    Magnetoelectric (ME) thin film composites on silicon cantilevers are fabricated using Pb(Zr0.52Ti0.45)O3 (PZT) films with interdigital transducer electrodes on the top side and FeCoSiB amorphous magnetostrictive thin films on the backside. These composites without any direct interface between the piezoelectric and magnetostrictive phase are superior to conventional plate capacitor-type thin film ME composites. A limit of detection of 2.6 pT/Hz1/2 at the mechanical resonance is determined which corresponds to an improvement of a factor of approximately 2.8 compared to the best plate type sensor using AlN as the piezoelectric phase and even a factor of approximately 4 for a PZT plate capacitor.

  10. Study of the Thin Film Pulse Transformer

    Institute of Scientific and Technical Information of China (English)

    LIU Bao-yuan; SHI Yu; WEN Qi-ye

    2005-01-01

    A new thin film pulse transformer for using in ISND and model systems is fabricated by a mask sputtering process. This novel pulse transformer consists of four I-shaped CoZrRe nanometer crystal magnetic-film cores and a Cu thin film coil, deposited on the micro-crystal glass substrate directly. The thickness of thin film core is between 1 and 3 μm, and the area is between 4mm×6 mm and 12mm×6 mm. The coils provide a relatively high induce of 0.8 μm and can be well operated in a frequency range of 0.001~20 MHz.

  11. Research on fabrication technology for thin film solar cells for practical use. Survey on the commercialization analysis; Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Jitsuyoka kaiseki ni kansuru chosa kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M. [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the survey results on the technological trend, safety and latest technologies of thin film solar cells in fiscal 1994. As the fabrication technology for amorphous film solar cells, three-electrode plasma CVD was surveyed as fabrication method for high-mobility materials, and hydrogen radical CVD as fabrication method for high-photostable films. Current foreign and domestic reliability tests were surveyed for reliability evaluation of solar cells. In order to ascertain the performance, efficiency, physical properties and optimum structure of polycrystalline Si thin film solar cells, previously reported test results on physical properties such as carrier concentration, carrier lifetime and mobility of films were surveyed together with device simulation results. In addition, technologies for high-efficiency CuInSe2 system and CdTe system solar cells, technologies for cost reduction and mass production, and environmental influence were surveyed. Estimation of production costs for cell modules, and safety of thin film solar cells were also surveyed.

  12. Host thin films incorporating nanoparticles

    Science.gov (United States)

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  13. MOF thin films: existing and future applications.

    Science.gov (United States)

    Shekhah, O; Liu, J; Fischer, R A; Wöll, Ch

    2011-02-01

    The applications and potentials of thin film coatings of metal-organic frameworks (MOFs) supported on various substrates are discussed in this critical review. Because the demand for fabricating such porous coatings is rather obvious, in the past years several synthesis schemes have been developed for the preparation of thin porous MOF films. Interestingly, although this is an emerging field seeing a rapid development a number of different applications on MOF films were either already demonstrated or have been proposed. This review focuses on the fabrication of continuous, thin porous films, either supported on solid substrates or as free-standing membranes. The availability of such two-dimensional types of porous coatings opened the door for a number of new perspectives for functionalizing surfaces. Also for the porous materials themselves, the availability of a solid support to which the MOF-films are rigidly (in a mechanical sense) anchored provides access to applications not available for the typical MOF powders with particle sizes of a few μm. We will also address some of the potential and applications of thin films in different fields like luminescence, QCM-based sensors, optoelectronics, gas separation and catalysis. A separate chapter has been devoted to the delamination of MOF thin films and discusses the potential to use them as free-standing membranes or as nano-containers. The review also demonstrates the possibility of using MOF thin films as model systems for detailed studies on MOF-related phenomena, e.g. adsorption and diffusion of small molecules into MOFs as well as the formation mechanism of MOFs (101 references).

  14. First Thin Film Festival

    Science.gov (United States)

    Samson, Philippe

    2005-05-01

    The constant evolution of the satellite market is asking for better technical performances and reliability for a reduced cost. Solar array is in front line of this challenge. This can be achieved by present technologies progressive improvement in cost reduction or by technological breakthrough. To reach an effective End Of Live performance100 W/kg of solar array is not so easy, even if you suppose that the mass of everything is nothing! Thin film cells are potential candidate to contribute to this challenge with certain confidence level and consequent development plan validation and qualification on ground and flight. Based on a strong flight heritage in flexible Solar Array design, the work has allowed in these last years, to pave the way on road map of thin film technologies . This is encouraged by ESA on many technological contracts put in concurrent engineering. CISG was selected cell and their strategy of design, contributions and results will be presented. Trade-off results and Design to Cost solutions will discussed. Main technical drivers, system design constraints, market access, key technologies needed will be detailed in this paper and the resulting road-map and development plan will be presented.

  15. Inorganic and Organic Solution-Processed Thin Film Devices

    Institute of Scientific and Technical Information of China (English)

    Morteza Eslamian

    2017-01-01

    Thin films and thin film devices have a ubiquitous presence in numerous conventional and emerging tech-nologies. This is because of the recent advances in nanotechnology, the development of functional and smart materials, conducting polymers, molecular semiconductors, carbon nanotubes, and graphene, and the employment of unique prop-erties of thin films and ultrathin films, such as high surface area, controlled nanostructure for effective charge transfer, and special physical and chemical properties, to develop new thin film devices. This paper is therefore intended to provide a concise critical review and research directions on most thin film devices, including thin film transistors, data storage memory, solar cells, organic light-emitting diodes, thermoelectric devices, smart materials, sensors, and actuators. The thin film devices may consist of organic, inorganic, and composite thin layers, and share similar functionality, properties, and fabrication routes. Therefore, due to the multidisciplinary nature of thin film devices, knowledge and advances already made in one area may be applicable to other similar areas. Owing to the importance of developing low-cost, scalable, and vacuum-free fabrication routes, this paper focuses on thin film devices that may be processed and deposited from solution.

  16. Fabrication of titania thin film with composite nanostructure and its ability to photodegrade rhodamine B in water

    Institute of Scientific and Technical Information of China (English)

    Gaojie ZHANG; Jinming WU; Shaoguang LIU; Mi YAN

    2008-01-01

    A titania nanorod film was synthesized by direct oxidation of metallic Ti with hydrogen peroxide solution under a low temperature. Titania nanoparticles were then filled into the gaps among the nanorods through an infiltration sol-gel procedure to form a composite titania film with an ordered nanostructure. X-ray diffraction spectra indicate that the composite film was a mixture of anatase and rutile while the titania film obtained by only using a sol-gel procedure was pure anatase. Field emission scanning electron microscopy observations show that titania nanoparticles were embedded into the titania nanorod film. Photoluminescence spectra suggest the enhanced separation of electron and hole pairs for the obtained composite titania film over the corresponding titania nanorod film. The composite titania film exhibited improved ability to photodegrade rhodamine B in water compared with the titania nanorod film. The apparent photodegradation rate constant, fitting a pseudo-first-order, was 3 times of that obtained by the sol-gel derived titania film at the same weight. The improved photocata-lytic activity for the composite titania film could be attributed to the enhanced separation of electron and hole pairs due to the embedding of the titania nanoparticles within the titania nanorods.

  17. Feasibility Study of Thin Film Thermocouple Piles

    Science.gov (United States)

    Sisk, R. C.

    2001-01-01

    Historically, thermopile detectors, generators, and refrigerators based on bulk materials have been used to measure temperature, generate power for spacecraft, and cool sensors for scientific investigations. New potential uses of small, low-power, thin film thermopiles are in the area of microelectromechanical systems since power requirements decrease as electrical and mechanical machines shrink in size. In this research activity, thin film thermopile devices are fabricated utilizing radio frequency sputter coating and photoresist lift-off techniques. Electrical characterizations are performed on two designs in order to investigate the feasibility of generating small amounts of power, utilizing any available waste heat as the energy source.

  18. The n-type conduction of indium-doped Cu{sub 2}O thin films fabricated by direct current magnetron co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cai, Xing-Min; Su, Xiao-Qiang; Ye, Fan, E-mail: yefan@szu.edu.cn; Wang, Huan; Tian, Xiao-Qing; Zhang, Dong-Ping; Fan, Ping; Luo, Jing-Ting; Zheng, Zhuang-Hao; Liang, Guang-Xing [Institute of Thin Film Physics and Applications, School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technology, Shenzhen University, Shenzhen 518060 (China); Roy, V. A. L. [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Kowloon Tong, Hong Kong (China)

    2015-08-24

    Indium-doped Cu{sub 2}O thin films were fabricated on K9 glass substrates by direct current magnetron co-sputtering in an atmosphere of Ar and O{sub 2}. Metallic copper and indium disks were used as the targets. X-ray diffraction showed that the diffraction peaks could only be indexed to simple cubic Cu{sub 2}O, with no other phases detected. Indium atoms exist as In{sup 3+} in Cu{sub 2}O. Ultraviolet-visible spectroscopy showed that the transmittance of the samples was relatively high and that indium doping increased the optical band gaps. The Hall effect measurement showed that the samples were n-type semiconductors at room temperature. The Seebeck effect test showed that the films were n-type semiconductors near or over room temperature (<400 K), changing to p-type at relatively high temperatures. The conduction by the samples in the temperature range of the n-type was due to thermal band conduction and the donor energy level was estimated to be 620.2–713.8 meV below the conduction band. The theoretical calculation showed that indium doping can raise the Fermi energy level of Cu{sub 2}O and, therefore, lead to n-type conduction.

  19. Fabrication and characterization of Er+3 doped SiO2/SnO2 glass-ceramic thin films for planar waveguide applications

    Science.gov (United States)

    Guddala, S.; Chiappini, A.; Armellini, C.; Turell, S.; Righini, G. C.; Ferrari, M.; Narayana Rao, D.

    2015-02-01

    Glass-ceramics are a kind of two-phase materials constituted by nanocrystals embedded in a glass matrix and the respective volume fractions of crystalline and amorphous phase determine the properties of the glass-ceramics. Among these properties transparency is crucial in particular when confined structures, such as, dielectric optical waveguides, are considered. Moreover, the segregation of dopant rare-earth ions, like erbium, in low phonon energy crystalline medium makes these structures more promising in the development of waveguide amplifiers. Here we are proposing a new class of low phonon energy tin oxide semiconductor medium doped silicate based planar waveguides. Er3+ doped (100-x) SiO2-xSnO2 (x= 10, 20, 25 and 30mol%), glass-ceramic planar waveguide thin films were fabricated by a simple sol-gel processing and dip coating technique. XRD and HRTEM studies indicates the glass-ceramic phase of the film and the dispersion of ~4nm diameter of tin oxide nanocrystals in the amorphous phase of silica. The spectroscopic assessment indicates the distribution of the dopant erbium ions in the crystalline medium of tin oxide. The observed low losses, 0.5±0.2 dB/cm, at 1.54 μm communication wavelength makes them a quite promising material for the development of high gain integrated optical amplifiers.

  20. Thin Film Inorganic Electrochemical Systems.

    Science.gov (United States)

    1995-07-01

    determined that thin film cathodes of LiCoO2 can be readily performed by either spray pyrolysis or spin coating . These cathodes are electrochemically...active. We have also determined that thin film anodes of Li4Ti5O12 can be prepared by spray pyrolysis or spin coating . These anodes are also

  1. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with

  2. Comparative study on substitution effects in BiFeO{sub 3} thin films fabricated on FTO substrates by chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xue, Xu; Tan, Guoqiang, E-mail: tan3114@163.com; Hao, Hangfei; Ren, Huijun

    2013-10-01

    Pure BiFeO{sub 3} (BFO), BiFe{sub 0.97}Co{sub 0.03}O{sub 3−δ} (BFCO) and Bi{sub 0.90}Gd{sub 0.10}Fe{sub 0.97}Co{sub 0.03}O{sub 3−δ} (BGFCO) thin films were successfully deposited on FTO substrates by chemical solution deposition technique. The field emission scanning electron microscope reveals that the surface morphology of the BGFCO thin film becomes more compact and uniform than that of the other two films. A slight lattice distortion is created in the BFCO thin film, whereas 10% Gd doping gives rise to tetragonal phase transition and (1 1 0) preferentially oriented film texture for the BGFCO thin film, as evidenced by Raman scattering spectra and X-ray diffraction analyses. X-ray photoelectron spectroscopy analyses clarify that Co-doping results in the increase of oxygen vacancy concentration in the BFCO film, while further introduction of Gd into the BFCO lattice can decrease oxygen vacancy concentration, and the concentrations of Fe{sup 2+} ions in the BFCO and BGFCO thin films are less than that in the BFO counterpart. The BFCO film shows the improved remanent polarization (P{sub r}) of 11.2 μC/cm{sup 2} compared with that of 1.4 μC/cm{sup 2} for the BFO film. The high breakdown strength, low leakage current density in the high electric filed, improved dielectric properties as well as the increased stereochemical activity of Bi ion lone electron pair of the BGFCO thin film all together contribute to the giant P{sub r} of 139.6 μC/cm{sup 2} at room temperature.

  3. Fabrication of highly crystalline oxide thin films on plastics: Sol–gel transfer technique involving high temperature process

    Directory of Open Access Journals (Sweden)

    Hiromitsu Kozuka

    2016-09-01

    Full Text Available Si(100 substrates were coated with a polyimide (PI–polyvinylpyrrolidone (PVP mixture film, and an alkoxide-derived TiO2 gel film was deposited on it by spin-coating. The gel films were fired under various conditions with final annealing at 600–1000 °C. The PI–PVP layer was completely decomposed at such high temperatures while the TiO2 films survived on Si(100 substrates without any damages. When the final annealing temperature was raised, the crystalline phase changed from anatase to rutile, and the crystallite size and the refractive index of the films tended to increase. The TiO2 films thus fired on Si(100 substrates were transferred to polycarbonate (PC substrates by melting the surface of the plastic substrate either in a near-infrared image furnace or on a hot plate under a load. Cycles of deposition and firing were found to be effective in achieving successful transfer even for the films finally annealed at 1000 °C. X-ray photoelectron spectroscopic analyses on the film/Si(100 interface suggested that the residual carbon or carbides at the interface could be a possible factor, but not a necessary and decisive factor that allows the film transfer.

  4. High temperature thermoelectric properties of highly c-axis oriented Bi2Sr2Co2Oy thin films fabricated by pulsed laser deposition

    Institute of Scientific and Technical Information of China (English)

    Chen Shan-Shan; Wang Shu-Fang; Liu Fu-Qiang; Yan Guo-Ying; Chen Jing-Chun; Wang Jiang-Long; Yu Wei; Fu Guang-Sheng

    2012-01-01

    High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co2Oy thin films prepared by pulsed laser deposition on LaAlO3 (001).Both the electric resistivity p and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m·Ω· cm and 202 μV/K at 980 K,resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples.A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature.The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application in high temperature thin film thermoelectric devices.

  5. Thermal radiative properties of (La{sub 1−x}Sr{sub x})MnO{sub 3−δ} thin films fabricated on yttria-stabilized zirconia single-crystal substrate by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Shiota, Tadashi, E-mail: tshiota@ceram.titech.ac.jp [Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8550 (Japan); Sato, Kenichi; Cross, Jeffrey S. [Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8550 (Japan); Wakiya, Naoki [Department of Electronics and Material Science, Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Tachikawa, Sumitaka; Ohnishi, Akira [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo, Sagamihara, Kanagawa 252-5210 (Japan); Sakurai, Osamu; Shinozaki, Kazuo [Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8550 (Japan)

    2015-10-30

    For application as a variable thermal emittance material in a recently-developed thermal control system for spacecraft, (La{sub 1−x}Sr{sub x})MnO{sub 3−δ} (LSMO) thin films with thicknesses of 1.2 μm, 2.5 μm, and 4.3 μm were fabricated on yttria-stabilized zirconia (100) substrates by a pulsed laser deposition and ex-situ annealing at 1123 K in air. All the films were dense and their surface roughness was much smaller than the thermal infrared (IR) wavelength. The films had (100) and (110)-preferred orientations, and the thicker films showed more preferable growth along the (100) orientation. Temperature–magnetization curves revealed that the LSMO films exhibited a metal–insulator transition near room temperature. The thermal emittance of the films estimated from IR reflectance spectra and black body radiation spectra exhibited large non-linearity near room temperature owing to the phase transition. The change in thermal emittance of the LSMO films that were more than 2.5 μm thick was comparable with that of the Ca-doped LSMO ceramic tiles already used as variable thermal emittance materials. Thus, this result clearly demonstrates that LSMO thin films with thickness of 2.5 μm can work as variable thermal emittance materials in the thermal control system for spacecraft. - Highlights: • High-quality La{sub 1−x}Sr{sub x}MnO{sub 3−δ}thin films were fabricated by pulsed laser deposition. • The films exhibited a metal–insulator transition near room temperature. • Their thermal emittance was dramatically changed owing to the phase transition. • More than 2.5-μm-thick films were suitable for a spacecraft thermal control system.

  6. Spinodal dewetting of thin films

    Science.gov (United States)

    Jaiswal, Prabhat K.; Puri, S.

    2009-01-01

    Stable thin liquid films are of various scientific and technological applications, e.g., in optical coating, painting technologies, coating thin wires and fibers, lubricants, adhesives, etc. However, the instabilities in a thin film may lead to rupture, hole formation, and other morphological changes which amplify the nonuniformity in the thin film [1]. This morphological evolution in an unstable thin film is generally known as `dewetting' [2]. There have recently been a number of theoretical and experimental studies on dewetting in thin films [3-6]. The process of `spinodal dewetting' comes into the category of a general class of phenomena, spinodal decomposition [7]. The pattern formation taking place during dewetting can also be of great importance in nanotechnology, e.g., for preparing quantum dots [8], nanorings [9], etc. We numerically solve the nonlinear two-dimensional thin film equation [2] for a thin liquid film subjected to the long range van der Waals attraction and short range Born repulsion. The simulation results for the temporal evolution of domains and height profile along diagonal direction of the lattice show the `hills and valleys' short of structures which is the typical morphology obtained during the spinodal dewetting [10]. We obtain the dynamical correlation function and structure factor showing the existence of a characteristic length scale in the system at late time. We give the scaling arguments for the length scale of the drops to be proportional to t1/3 which is in agreement with our numerical results for the domain growth.

  7. Fabrication of solar cells based on polycrystalline CdTe thin films using an economical production. Energie

    Energy Technology Data Exchange (ETDEWEB)

    Tranchart, J.C.; Boucherez, P.

    1983-01-01

    Polycrystalline CdS and CdTe films were produced by serigraphy. High-quality CdS films were obtained, especially with CdCl as melting phase. In the field of CdTe films, further studies are required in order to improve the sintering process, the film porosity characteristics, and the electric resistivity which decides the serial conductivity of the n-CdS/p-CdTe structures. In the field of solar cells, quartz +In/sub 2/O/sub 3/+CdS+CdTe heterostructures with a photoelectric efficiency of 2.5% were obtained. This value is too low, even if the economic advantages of serigraphy are taken into account. Further studies should center on the sintering process for CdTe films.

  8. Electrostatically assisted fabrication of silver-dielectric core/shell nanoparticles thin film capacitor with uniform metal nanoparticle distribution and controlled spacing.

    Science.gov (United States)

    Li, Xue; Niitsoo, Olivia; Couzis, Alexander

    2016-03-01

    An electrostatically-assisted strategy for fabrication of thin film composite capacitors with controllable dielectric constant (k) has been developed. The capacitor is composed of metal-dielectric core/shell nanoparticle (silver/silica, Ag@SiO2) multilayer films, and a backfilling polymer. Compared with the simple metal particle-polymer mixtures where the metal nanoparticles (NP) are randomly dispersed in the polymer matrix, the metal volume fraction in our capacitor was significantly increased, owing to the densely packed NP multilayers formed by the electrostatically assisted assembly process. Moreover, the insulating layer of silica shell provides a potential barrier that reduces the tunneling current between neighboring Ag cores, endowing the core/shell nanocomposites with a stable and relatively high dielectric constant (k) and low dielectric loss (D). Our work also shows that the thickness of the SiO2 shell plays a dominant role in controlling the dielectric properties of the nanocomposites. Control over metal NP separation distance was realized not only by variation the shell thickness of the core/shell NPs but also by introducing a high k nanoparticle, barium strontium titanate (BST) of relatively smaller size (∼8nm) compared to 80-160nm of the core/shell Ag@SiO2 NPs. The BST assemble between the Ag@SiO2 and fill the void space between the closely packed core/shell NPs leading to significant enhancement of the dielectric constant. This electrostatically assisted assembly method is promising for generating multilayer films of a large variety of NPs over large areas at low cost.

  9. Chemical solution deposition of functional oxide thin films

    CERN Document Server

    Schneller, Theodor; Kosec, Marija

    2014-01-01

    Chemical Solution Deposition (CSD) is a highly-flexible and inexpensive technique for the fabrication of functional oxide thin films. Featuring nearly 400 illustrations, this text covers all aspects of the technique.

  10. Comparison of metallization systems for thin film hybrid microcircuits

    Energy Technology Data Exchange (ETDEWEB)

    Hines, R.A.; Raut, M.K.

    1980-08-01

    Five metallization systems were evaluated for fabricating thin film hybrid microcircuits. The titanium/palladium/electroplated gold system proved superior in terms of thermocompression bondability, corrosion resistance, and solderability.

  11. Fabrication and characterization of (111)-epitaxial Pb(Zr0.35Ti0.65)O3/Pb(Zr0.65Ti0.35)O3 artificial superlattice thin films

    Science.gov (United States)

    Yamada, Tomoaki; Ebihara, Youhei; Kiguchi, Takanori; Sakata, Osami; Morioka, Hitoshi; Shimizu, Takao; Funakubo, Hiroshi; Konno, Toyohiko J.; Yoshino, Masahito; Nagasaki, Takanori

    2016-10-01

    Artificial superlattice thin films consisting of two different compositions of Pb(Zr,Ti)O3 (PZT), which are in tetragonal and rhombohedral phases at room temperature in the bulk state, were grown on (111) c SrRuO3/(111)SrTiO3 by pulsed laser deposition. Fairly perfect periodicity with sharp interfaces was observed by X-ray diffraction and scanning transmission electron microscopy. It was found that the film with each layer of 5 nm thickness had a single-domain structure for both PZT layers, which would arise from the strong mechanical and electrical coupling between PZT layers. The fabricated superlattice thin films showed saturated P-E hysteresis curves. Larger electromechanical response was observed in the films with smaller layer thickness.

  12. Correlations between optical properties, microstructure, and processing conditions of Aluminum nitride thin films fabricated by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Baek, Jonghoon [Department of Electrical and Computer Engineering, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States)]. E-mail: jhoon6@hotmail.com; Ma, James [Materials Science and Engineering Program, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States); Becker, Michael F. [Department of Electrical and Computer Engineering, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States); Keto, John W. [Department of Physics, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States); Kovar, Desiderio [Department of Mechanical Engineering, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States)

    2007-06-25

    Aluminum nitride (AlN) films were deposited using pulsed laser deposition (PLD) onto sapphire (0001) substrates with varying processing conditions (temperature, pressure, and laser fluence). We have studied the dependence of optical properties, structural properties and their correlations for these AlN films. The optical transmission spectra of the produced films were measured, and a numerical procedure was applied to accurately determine the optical constants for films of non-uniform thickness. The microstructure and texture of the films were studied using various X-ray diffraction techniques. The real part of the refractive index was found to not vary significantly with processing parameters, but absorption was found to be strongly dependent on the deposition temperature and the nitrogen pressure in the deposition chamber. We report that low optical absorption, textured polycrystalline AlN films can be produced by PLD on sapphire substrates at both low and high laser fluence using a background nitrogen pressure of 6.0 x 10{sup -2} Pa (4.5 x 10{sup -4} Torr) of 99.9% purity.

  13. Fabrication and lithium intercalation properties of epitaxial Li{sub 2}RuO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zheng Yueming [Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan); School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an 710049 (China); Taminato, Sou; Suzuki, Kota [Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan); Hirayama, Masaaki, E-mail: hirayama@echem.titech.ac.jp [Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan); Kanno, Ryoji [Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan)

    2012-05-31

    Lithium intercalation in a lithium excess layered material Li{sub 2}RuO{sub 3} was investigated using two-dimensional model electrodes with a restricted reaction plane of (002). Li{sub 2}RuO{sub 3} films were synthesized on Al{sub 2}O{sub 3}(0001) substrate by a pulsed laser deposition, and X-ray diffraction measurements confirmed epitaxial growth of Li{sub 2}RuO{sub 3}(002). Electrochemical characterization using cyclic voltammetry and charge/discharge measurements indicated electrochemical reactions with a discharge capacity of 200 mAh g{sup -1} for the film deposited at 400 Degree-Sign C followed by post-annealing at 550 Degree-Sign C. The electrochemical activity on the (002) plane indicated three-dimensional lithium diffusion in the two-dimensional layered rocksalt structure through the lithium sites in the transition metal layer. - Highlights: Black-Right-Pointing-Pointer Epitaxial Li{sub 2}RuO{sub 3} (002) films were successfully synthesized on Al{sub 2}O{sub 3} (0001). Black-Right-Pointing-Pointer Li{sub 2}RuO{sub 3} (002) films exhibited a discharge capacity of 200 mAh g{sup -1}. Black-Right-Pointing-Pointer 3-dimensional Li diffusion was confirmed in the 2-dimensional layered structure. Black-Right-Pointing-Pointer Mechanistic studies using epitaxial films clarify the intercalation mechanism.

  14. The Relation Between Structure-Performance of Thin Film Composite Membranes and the Tools Used for Their Fabrication Method

    DEFF Research Database (Denmark)

    Briceno, Kelly; Javakhishvili, Irakli; Guo, Haofei

    of avoiding bubble formation during fabrication as that would later compromise the function of the membrane, but each process step must be well controlled to obtain reliable and consistent membrane performance. In general, the fabrication of the polyamide membrane layer is carried out in two steps...... after the support has been in contact with the aqueous phase, because formation of irregular drops could be initiation points for defects during the second step. Several tools have been used to eliminate the drop formation including air-knifes, rubber wipers, rubber rollers, glass rollers...

  15. Fabrication and examination of epitaxial HTSC/isolator thin films on sapphire substrates for application in high frequency devices; Herstellung und Untersuchung von epitaktischen HTSL/Isolator-Schichten auf Saphirsubstraten zur Anwendung in HF-Bauelementen

    Energy Technology Data Exchange (ETDEWEB)

    Kittel, H.

    1995-10-01

    The use of high temperature superconductors (HTSC) like YBCO with distinct lower surface resistance compared to normal conductors allows miniaturisation of high frequency (HF) circuits. The object of this work was the fabrication of YBCO thin films on low loss sapphire substrates applicable for stripline devices. To induce epitaxial growth and to avoid chemical reaction at the film-substrate boundary buffer layers were investigated. The examination of the growth properties and especially of the surface impedance has been allotted particular importance. In contrast to CaTiO{sub 3} it was possible to deposit CeO{sub 2}-buffer layers in direct growth up to a thickness of about 30 nm without cracks. The films show all growth properties required and even Laue-oscillations being a feature of high quality growth enabling the determination of film thickness distribution without destruction. The YBCO growth-, transport- and HF-properties meet the ones of YBCO films on standard substrates. A remarkable result is that the mosaic distribution of the CEO film, itself strongly dependend on film thickness, does not influence that of the YBCO film considerably. Rather it changes its shape subsequently due to YBCO deposition. A further particularity in contrast to deposition on standard substrates is the need to adjust the substrate heater tempeature for deposition of YBCO films with thicknesses {>=}300 nm needed for HF application. To demonstrate their usefullness some stripline devices like planar coils and side coupled filters have been fabricated and characterised. (orig.)

  16. Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition

    Science.gov (United States)

    Cui, Guodong; Han, Dedong; Dong, Junchen; Cong, Yingying; Zhang, Xiaomi; Li, Huijin; Yu, Wen; Zhang, Shengdong; Zhang, Xing; Wang, Yi

    2017-04-01

    By applying a novel active layer comprising ZnO/Al2O3 multilayers, we have successfully fabricated fully transparent high-performance thin-film transistors (TFTs) with a bottom gate structure by atomic layer deposition (ALD) at low temperature. The effects of various ZnO/Al2O3 multilayers were studied to improve the morphological and electrical properties of the devices. We found that the ZnO/Al2O3 multilayers have a significant impact on the performance of the TFTs, and that the TFTs with the ZnO/15-cycle Al2O3/ZnO structure exhibit superior performance with a low threshold voltage (V TH) of 0.9 V, a high saturation mobility (μsat) of 145 cm2 V‑1 s‑1, a steep subthreshold swing (SS) of 162 mV/decade, and a high I on/I off ratio of 3.15 × 108. The enhanced electrical properties were explained by the improved crystalline nature of the channel layer and the passivation effect of the Al2O3 layer.

  17. Investigation of fabrication and hetero-epitaxy relationship of CoCrPt thin films grown on CrW underlayer

    Institute of Scientific and Technical Information of China (English)

    Li Song-Tian; Liu Xi; Shi Wen-Kui; Cao Jiang-Wei; Wei Fu-Lin; Wei Dan

    2009-01-01

    This paper reports that longitudinally oriented CoCrPt thin films with Cr85W15 underlayer and CoCr intermediate layer for use of giant magnetoresistance heads were fabricated by magnetron sputtering.Without CoCr intermediate layer,CoCrPt layer deposited directly on Cr85W15 underlayer which has a dominant(200)texture exhibits unexpected(10-11)texture.After introducing CoCr intermediate layer,the CoCrPt layer shifts into(1120)texture.This article studies the crystallographic hetero-epitaxy relationship between magnetic layer and underlayer in order to understand the appearance of CoCrPt(10-11)texture on(200)textured Cr underlayer and the influence of CoCr intermediate layer on the inducement of CoCrPt(11-20)texture.The CoCr intermediate layer plays a crucial role in controlling the microstructure and consequently the magnetic properties of the overlying magnetic layer.

  18. 氧化锌基薄膜晶体管制备与研究%The Fabrication and Study of ZnO-Based Thin Film Transistors

    Institute of Scientific and Technical Information of China (English)

    杨小天; 荆海; 王超; 常遇春; 杜国同; 曹健林; 马仙梅; 朱慧超; 高文涛; 金虎; 齐晓薇; 高博; 董秀茹; 付国柱

    2008-01-01

    Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TF-TS) have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition(MOCVD) at about 360℃. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabrica-ted on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible por-tion is~80%. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material.%以玻璃为衬底,利用金属有机化学气相沉积(MOCVD)方法,在360℃附近实现ZnO薄膜的生长.利用ZnO为有源层制备底栅型薄膜晶体管.SiO2 被用作栅绝缘材料以有效的抑制漏泄电流的产生,达到氧化锌薄膜晶体管 (ZnO-TFT) 成功运作目的.ZnO-TFT 的电流开关(on/off)比达到104以上.ZnO-TFT 在可见光区平均光透过率大约为80%.以上表明利用ZnO 替代传统 Si 材料作有源层材料制备透明薄膜晶体管是可能的.

  19. Raman spectroscopy of thin films

    Science.gov (United States)

    Burgess, James Shaw

    boron was successfully introduced into both a bulk powder fabricated in a quartz furnace using a BCl3/C6H 6 precursor and for a thin film (30 nm) deposited in a vacuum chamber using d.c. magnetron cosputtering. In addition to Raman, x-ray diffraction and x-ray photoelectron spectroscopy were used to verify boron-doping of the materials. Generation 4 Poly(amidoamine) dendrimers were used to form platinum and cobalt nanoparticles to form dendrimer-encapsulated nanoparticles (DENs). It was seen using both Raman and infrared spectroscopy that these metals bonded with the dendrimers after reduction. These studies highlight the efficacy of Raman in the study of a wide variety of materials to obtain both compositional and structural information.

  20. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with t

  1. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with t

  2. Development of Low-cost Chemical and Micromechanical Sensors Based on Thick-film,Thin-film and Electroplated Films

    Institute of Scientific and Technical Information of China (English)

    Wenmin Qu; Kurt Drescher

    2000-01-01

    Various films could be used as sensing materials or as constructional materials for the fabrication of chemical and micromechanical sensors. To illustrate this potential, three sensors fabricated by very different film deposition technologies are given as examples. The sensors are a humidity sensor in thickfilm technology, a multi-functional gas sensor in thin-film technology and a three-dimensional acceleration sensor chip manufactured by electroplating techniques. Design, fabrication and characterisation of these sensors are described in this paper.

  3. Optimized fabrication of high-quality La{sub 0.67}Sr{sub 0.33}MnO{sub 3} thin films considering all essential characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Boschker, H; Huijben, M; Houwman, E P; Koster, G; Blank, D H A; Rijnders, G [Faculty of Science and Technology and MESA Institute for Nanotechnology, University of Twente, 7500 AE, Enschede (Netherlands); Vailionis, A [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305 (United States); Verbeeck, J; Van Aert, S; Bals, S; Van Tendeloo, G [Electron Microscopy for Materials Science (EMAT), University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp (Belgium); Luysberg, M, E-mail: a.j.h.m.rijnders@utwente.nl [Institute of Solid State Research and Ernst Ruska Center for Microscopy and Spectroscopy with Electrons, Helmholtz Research Center Juelich, 52425 Juelich (Germany)

    2011-05-25

    In this paper, an overview of the fabrication and properties of high-quality La{sub 0.67}Sr{sub 0.33}MnO{sub 3} (LSMO) thin films is given. A high-quality LSMO film combines a smooth surface morphology with a large magnetization and a small residual resistivity, while avoiding precipitates and surface segregation. In the literature, typically only a few of these issues are adressed. We therefore present a thorough characterization of our films, which were grown by pulsed laser deposition. The films were characterized with reflection high energy electron diffraction, atomic force microscopy, x-ray diffraction, magnetization and transport measurements, x-ray photoelectron spectroscopy and scanning transmission electron microscopy. The films have a saturation magnetization of 4.0 {mu}{sub B}/Mn, a Curie temperature of 350 K and a residual resistivity of 60 {mu}{Omega} cm. These results indicate that high-quality films, combining both large magnetization and small residual resistivity, were realized. A comparison between different samples presented in the literature shows that focussing on a single property is insufficient for the optimization of the deposition process. For high-quality films, all properties have to be adressed. For LSMO devices, the thin-film quality is crucial for the device performance. Therefore, this research is important for the application of LSMO in devices.

  4. Effects of Solution-Based Fabrication Conditions on Morphology of Lead Halide Perovskite Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Jeremy L. Barnett

    2016-01-01

    Full Text Available We present a critical review of the effects of processing conditions on the morphology of methylammonium lead iodide (CH3NH3PbI3 perovskite solar cells. Though difficult to decouple from synthetic and film formation effects, a single morphological feature, specifically grain size, has been evidently linked to the photovoltaic performance of this class of solar cells. Herein, we discuss experimental aspects of optimizing the (a temperature and time of annealing, (b spin-coating parameters, and (c solution temperature of methylammonium iodide (MAI solution.

  5. Unsorted single walled carbon nanotubes enabled the fabrication of high performance organic thin film transistors with low cost metal electrodes.

    Science.gov (United States)

    Smithson, Chad S; Zhu, Shiping; Wigglesworth, Tony; Wu, Yiliang

    2013-10-09

    Transistors with a diketopyrrolopyrrole-quarterthiophene (DPP-QT) semiconductor and low-cost Al or Cu electrodes were studied. Albeit a large charge injection resistance exists between DPP-QT and Al or Cu, the resistance was dramatically reduced when unsorted single walled carbon nanotubes (SWCNTs) were blended into the DPP-QT film. This led to a high mobility of 0.64 and 1.1 cm(2) V(-1) s(-1), respectively, for Al and Cu devices, which is similar or even better than the device using gold electrodes (0.78 cm(2) V(-1) s(-1)).

  6. Interface controlled growth of nanostructures in discontinuous Ag and Au thin films fabricated by ion beam sputter deposition for plasmonic applications

    Indian Academy of Sciences (India)

    R Brahma; M Ghanashyam Krishna

    2012-08-01

    The growth of discontinuous thin films of Ag and Au by low energy ion beam sputter deposition is reported. The study focuses on the role of the film–substrate in determining the shape and size of nanostructures achieved in such films. Ag films were deposited using Ar ion energy of 150 eV while the Au films were deposited with Ar ion energies of 250–450 eV. Three types of interfaces were investigated in this study. The first set of film–substrate interfaces consisted of Ag and Au films grown on borosilicate glass and carbon coated Cu grids used as substrates. The second set of films was metallic bilayers in which one of the metals (Ag or Au) was grown on a continuous film of the other metal (Au or Ag). The third set of interfaces comprised of discontinuous Ag and Au films deposited on different dielectrics such as SiO2, TiO2 and ZrO2. In each case, a rich variety of nanostructures including self organized arrays of nanoparticles, nanoclusters and nanoneedles have been achieved. The role of the film–substrate interface is discussed within the framework of existing theories of thin film nucleation and growth. Interfacial nanostructuring of thin films is demonstrated to be a viable technique to realize a variety of nanostructures. The use of interfacial nanostructuring for plasmonic applications is demonstrated. It is shown that the surface Plasmon resonance of the metal nanostructures can be tuned over a wide range of wavelengths from 400 to 700 nm by controlling the film–substrate interface.

  7. Magnetically actuated peel test for thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ostrowicki, G.T.; Sitaraman, S.K., E-mail: suresh.sitaraman@me.gatech.edu

    2012-03-30

    Delamination along thin film interfaces is a prevalent failure mechanism in microelectronic, photonic, microelectromechanical systems, and other engineering applications. Current interfacial fracture test techniques specific to thin films are limited by either sophisticated mechanical fixturing, physical contact near the crack tip, or complicated stress fields. Moreover, these techniques are generally not suitable for investigating fatigue crack propagation under cyclical loading. Thus, a fixtureless and noncontact experimental test technique with potential for fatigue loading is proposed and implemented to study interfacial fracture toughness for thin film systems. The proposed test incorporates permanent magnets surface mounted onto micro-fabricated released thin film structures. An applied external magnetic field induces noncontact loading to initiate delamination along the interface between the thin film and underlying substrate. Characterization of the critical peel force and peel angle is accomplished through in situ deflection measurements, from which the fracture toughness can be inferred. The test method was used to obtain interfacial fracture strength of 0.8-1.9 J/m{sup 2} for 1.5-1.7 {mu}m electroplated copper on natively oxidized silicon substrates. - Highlights: Black-Right-Pointing-Pointer Non-contact magnetic actuation test for interfacial fracture characterization. Black-Right-Pointing-Pointer Applied load is determined through voltage applied to the driving electromagnet. Black-Right-Pointing-Pointer Displacement and delamination propagation is measured using an optical profiler. Black-Right-Pointing-Pointer Critical peel force and peel angle is measured for electroplated Cu thin-film on Si. Black-Right-Pointing-Pointer The measured interfacial fracture energy of Cu/Si interface is 0.8-1.9 J/m{sup 2}.

  8. Design and fabrication of optical thin film layers with variable thickness profile for producing variable reflectivity mirrors

    Directory of Open Access Journals (Sweden)

    Hamid R fallah

    2006-12-01

    Full Text Available   The design method and fabrication of mirrors with variable reflectivity are presented. To fabricate such a mirror a fixed mask with a circular aperture is used. The circular aperture is considered as an extended source with cosx(θas its diffusion distribution function and is the parameter for the distribution function of the particles through the aperture. The thickness profile of deposited layer is a function of this distribution. In this work, the coating system is calibrated for the materials which are used and then the parameter of the diffusion distribution function of the particles through the circular aperture is defined by experiments. Using these results, a graph is presented which connects the parameter of the circular aperture to the parameters of the thickness profile. It is then possible to deposit any type of variable reflectivity mirror using this graph. Finally, the effect of the uncertainty in measuring layer thicknesses on the phase of reflected wave and transmitted wave is investigated.

  9. Size effects in thin films

    CERN Document Server

    Tellier, CR; Siddall, G

    1982-01-01

    A complete and comprehensive study of transport phenomena in thin continuous metal films, this book reviews work carried out on external-surface and grain-boundary electron scattering and proposes new theoretical equations for transport properties of these films. It presents a complete theoretical view of the field, and considers imperfection and impurity effects.

  10. Thin film corrosion. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Raut, M.K.

    1980-06-01

    Corrosion of chromium/gold (Cr/Au) thin films during photolithography, prebond etching, and cleaning was evaluated. Vapors of chromium etchant, tantalum nitride etchant, and especially gold etchant were found to corrosively attack chromium/gold films. A palladium metal barrier between the gold and chromium layers was found to reduce the corrosion from gold etchant.

  11. Effect of In Situ Thermal Annealing on Structural, Optical, and Electrical Properties of CdS/CdTe Thin Film Solar Cells Fabricated by Pulsed Laser Deposition

    OpenAIRE

    Alaa Ayad Al-mebir; Paul Harrison; Ali Kadhim; Guanggen Zeng; Judy Wu

    2016-01-01

    An in situ thermal annealing process (iTAP) has been introduced before the common ex situ cadmium chloride (CdCl2) annealing to improve crystal quality and morphology of the CdTe thin films after pulsed laser deposition of CdS/CdTe heterostructures. A strong correlation between the two annealing processes was observed, leading to a profound effect on the performance of CdS/CdTe thin film solar cells. Atomic force microscopy and Raman spectroscopy show that the iTAP in the optimal processing w...

  12. Gamma-cyclodextrin/usnic acid thin film fabricated by MAPLE for improving the resistance of medical surfaces to Staphylococcus aureus colonization

    Science.gov (United States)

    Iordache, Florin; Grumezescu, Valentina; Grumezescu, Alexandru Mihai; Curuţiu, Carmen; Diţu, Lia Mara; Socol, Gabriel; Ficai, Anton; Truşcă, Roxana; Holban, Alina Maria

    2015-05-01

    This study reports on the successful deposition of γ-cyclodextrin/usnic acid (γCD/UA) thin film by Matrix Assisted Pulsed Laser Evaporation (MAPLE) as anti-adherent coating on medical surfaces against microbial colonization. The obtained results demonstrate that these bioactive thin films inhibit Staphylococcus aureus biofilm formation at all stages, starting with their initiation. The antibiofilm effect was constant along the bacterial incubation time. Furthermore, the γCD/UA coatings show a great biocompatibility which means that this material is suitable for the development of modern medical devices with antimicrobial properties.

  13. Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication of Superlattice Structures Using AIN and InN

    Science.gov (United States)

    1992-12-01

    AD-A258 804 Final Technical Report Ii Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent...Technical 6/1/86-12/31/92 4. TITLE AND SUBTITLE Growth, Nitrogen Vacancy Reduction and 5. FUNDING NUMBERS Solid Solution Formation in Cubic GaN Thin...According to the structural and chemical analyses, there is no reason to believe that a homogeneous solid solution close to this composition had

  14. Fabrication of resistive switching memory based on solution processed PMMA-HfO x blended thin films

    Science.gov (United States)

    Lee, Jae-Won; Cho, Won-Ju

    2017-02-01

    In this study, we developed PMMA-HfO x blended resistive random access memory (ReRAM) devices using solution processing to overcome the drawbacks of the individual organic and inorganic materials. Resistive switching behaviors of solution-processed PMMA, PMMA-HfO x , and HfO x film-based ReRAM devices were investigated. The poor electrical characteristic of PMMA and brittle mechanical properties of HfO x can be improved by blending PMMA and HfO x together. The PMMA-HfO x blended ReRAM device exhibited a larger memory window, stable endurance and retention, a lower operation power, and better set/reset voltage distributions. Furthermore, these new systems featured multilevel conduction states at different reset bias for non-volatile multilevel memory applications. Therefore, solution-processed PMMA-HfO x blended films are a promising material for non-volatile memory devices on flexible or wearable electronic systems.

  15. Thin Film Deposition Techniques (PVD)

    Science.gov (United States)

    Steinbeiss, E.

    The most interesting materials for spin electronic devices are thin films of magnetic transition metals and magnetic perovskites, mainly the doped La-manganites [1] as well as several oxides and metals for passivating and contacting the magnetic films. The most suitable methods for the preparation of such films are the physical vapor deposition methods (PVD). Therefore this report will be restricted to these deposition methods.

  16. Synthesis of ZnO Nanoparticles to Fabricate a Mask-Free Thin-Film Transistor by Inkjet Printing

    Directory of Open Access Journals (Sweden)

    Chao-Te Liu

    2012-01-01

    Full Text Available We report a low-cost, mask-free, reduced material wastage, deposited technology using transparent, directly printable, air-stable semiconductor slurries and dielectric solutions. We have demonstrate an emerging process for fabricating printable transistors with ZnO nanoparticles as the active channel and poly(4-vinylphenol (PVP matrix as the gate dielectric, respectively, and the inkjet-printed ZnO TFTs have shown to exhibit the carrier mobility of 0.69 cm2/Vs and the threshold voltage of 25.5 V. We suggest that the printable materials and the printing technology enable the use of all-printed low-cost flexible displays and other transparent electronic applications.

  17. Polyelectrolyte Coacervates Deposited as High Gas Barrier Thin Films.

    Science.gov (United States)

    Haile, Merid; Sarwar, Owais; Henderson, Robert; Smith, Ryan; Grunlan, Jaime C

    2017-01-01

    Multilayer coatings consisting of oppositely charged polyelectrolytes have proven to be extraordinarily effective oxygen barriers but require many processing steps to fabricate. In an effort to prepare high oxygen barrier thin films more quickly, a polyelectrolyte complex coacervate composed of polyethylenimine and polyacrylic acid is prepared. The coacervate fluid is applied as a thin film using a rod coating process. With humidity and thermal post-treatment, a 2 µm thin film reduces the oxygen transmission rate of 0.127 mm poly(ethylene terephthalate) by two orders of magnitude, rivalling conventional oxygen barrier technologies. These films are fabricated in ambient conditions using low-cost, water-based solutions, providing a tremendous opportunity for single-step deposition of polymeric high barrier thin films.

  18. Polycrystalline thin film cadmium telluride solar cells fabricated by electrodeposition. Annual subcontract report, 20 March 1993--19 March 1994

    Energy Technology Data Exchange (ETDEWEB)

    Trefny, J.U.; Furtak, T.E.; Williamson, D.L.; Kim, D. [Colorado School of Mines, Golden, CO (United States)

    1994-07-01

    This report describes the principal results of work performed during the second year of a 3-year program at the Colorado School of Mines (CSM). The work on transparent conducting oxides was carried out primarily by CSM students at NREL and is described in three publications listed in Appendix C. The high-quality ZnO produced from the work was incorporated into a copper indium diselenide cell that exhibited a world-record efficiency of 16.4%. Much of the time was devoted to the improvement of cadmium sulfide films deposited by chemical bath deposition methods and annealed with or without a cadmium chloride treatment. Progress was also made in the electrochemical deposition of cadmium telluride. High-quality films yielding CdS/CdTe/Au cells of greater than 10% efficiency are now being produced on a regular basis. We explored the use of zinc telluride back contacts to form an n-i-p cell structure as previously used by Ametek. We began small-angle x-ray scattering (SAXS) studies to characterize crystal structures, residual stresses, and microstructures of both CdTe and CdS. Large SAXS signals were observed in CdS, most likely because of scattering from gain boundaries. The signals observed to date from CdTe are much weaker, indicating a more homogeneous microstructure. We began to use the ADEPT modeling program, developed at Purdue University, to guide our understanding of the CdS/CdTe cell physics and the improvements that will most likely lead to significantly enhanced efficiencies.

  19. Quarternair CuGaSeTe and CuGa0.5In 0.5Te2 Thin Films Fabrication Using Flash Evaporation

    Directory of Open Access Journals (Sweden)

    A Harsono Soepardjo

    2010-10-01

    Full Text Available Quarternair materials CuGaSeTe and CuGa0.5In 0.5Te2 are the basic materials to solar cell fabrication. These materials have high absorption coefficients around 103 - 105 cm-1 and band gap energy in the range of 1-5 eV. In this research, the films were made by flash evaporation method using quarternair powder materials of CuGaSeTe and CuGa0.5In 0.5Te2 to adhere in a glass substrate. After the films were obtained, the properties of these films will be characterized optically and electrically. The lattice parameter of the films and the crystalline film structure were obtained using X-Ray Diffraction (XRD spectroscopy. The XRD results show that the quarternair CuGaSeTe and CuGa0.5In 0.5Te2 films have a chalcopyrite structure. The absorption coefficient and the  band gap energy of the films were calculated using transmittance and reflectance patterns that measured using UV-VIS Difractometer. The films composition can be detected by using the Energy Dispersive Spectroscopy (EDS, while the films resistivity, mobility and the majority carrier of the films were obtained from Hall Effect experiments.

  20. Nonlinear optical properties of Au/PVP composite thin films

    Institute of Scientific and Technical Information of China (English)

    Shen Hong; Cheng Bo-Lin; Lu Guo-Wei; Wang Wei-Tian; Guan Dong-Yi; Chen Zheng-Hao; Yang Guo-Zhen

    2005-01-01

    Colloidal Au and poly(vinylpyrrolidone) (PVP) composite thin films are fabricated by spin-coating method. Linear optical absorption measurements of the Au/PVP composite films indicate an absorption peak around 530 nm due to the surface plasmon resonance of gold nanoparticles. Nonlinear optical properties are studied using standard Z-scan technique, and experimental results show large optical nonlinearities of the Au/PVP composite films. A large value of films.

  1. Rechargeable Thin-film Lithium Batteries

    Science.gov (United States)

    Bates, J. B.; Gruzalski, G. R.; Dudney, N. J.; Luck, C. F.; Yu, Xiaohua

    1993-08-01

    Rechargeable thin film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have recently been developed. The batteries, which are typically less than 6 {mu}m thick, can be fabricated to any specified size, large or small, onto a variety of substrates including ceramics, semiconductors, and plastics. The cells that have been investigated include Li TiS{sub 2}, Li V{sub 2}O{sub 5}, and Li Li{sub x}Mn{sub 2}O{sub 4}, with open circuit voltages at full charge of about 2.5, 3.6, and 4.2, respectively. The development of these batteries would not have been possible without the discovery of a new thin film lithium electrolyte, lithium phosphorus oxynitride, that is stable in contact with metallic lithium at these potentials. Deposited by rf magnetron sputtering of Li{sub 3}PO{sub 4} in N{sub 2}, this material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25{degrees}C of 2 {mu}S/cm. The maximum practical current density obtained from the thin film cells is limited to about 100 {mu}A/cm{sup 2} due to a low diffusivity of Li{sup +} ions in the cathodes. In this work, the authors present a short review of their work on rechargeable thin film lithium batteries.

  2. Flexoelectricity in barium strontium titanate thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Seol Ryung; Huang, Wenbin; Yuan, Fuh-Gwo; Jiang, Xiaoning, E-mail: xjiang5@ncsu.edu [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Shu, Longlong [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Electronic Materials Research Laboratory, International Center for Dielectric Research, Xi' an Jiao Tong University, Xi' an, Shaanxi 710049 (China); Maria, Jon-Paul [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-10-06

    Flexoelectricity, the linear coupling between the strain gradient and the induced electric polarization, has been intensively studied as an alternative to piezoelectricity. Especially, it is of interest to develop flexoelectric devices on micro/nano scales due to the inherent scaling effect of flexoelectric effect. Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin film with a thickness of 130 nm was fabricated on a silicon wafer using a RF magnetron sputtering process. The flexoelectric coefficients of the prepared thin films were determined experimentally. It was revealed that the thin films possessed a transverse flexoelectric coefficient of 24.5 μC/m at Curie temperature (∼28 °C) and 17.44 μC/m at 41 °C. The measured flexoelectric coefficients are comparable to that of bulk BST ceramics, which are reported to be 10–100 μC/m. This result suggests that the flexoelectric thin film structures can be effectively used for micro/nano-sensing devices.

  3. Impact of NiOx Buffer Layers on the Dielectric Properties of BaTiO3 Thin Films on Nickel Substrates Fabricated by Polymer Assisted Deposition

    Directory of Open Access Journals (Sweden)

    Hui Du

    2015-01-01

    Full Text Available Structural health monitoring with piezoelectric thin films integrated on structural metals shows great advantages for potential applications. However, the integration of piezoelectric thin films on structure metals is still challenged. In this paper, we report the piezoelectric barium titanate [BaTiO3 (BTO] thin films deposited on polycrystalline Ni substrates by the polymer assisted deposition (PAD method using NiOx as the buffer layers. The NiOx buffer layers with different thicknesses were prepared by varying immersing time from 5 minutes to 4 hours in H2O2 solution. The dielectric and leakage current properties of the thin films have been studied by general test systems. The BTO/Ni heterostructure with 2-hour immersing time exhibits better dielectric properties with a dielectric constant over 1500 and a 34.8% decrease of the dielectric loss compared to that with 5-minute immersing time. The results show that the leakage current density is strongly affected by the thickness of the NiOx buffer layer. The conduction mechanisms of the BTO/Ni heterostructure have been discussed according to the J-V characteristic curves.

  4. Effect of In Situ Thermal Annealing on Structural, Optical, and Electrical Properties of CdS/CdTe Thin Film Solar Cells Fabricated by Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Alaa Ayad Al-mebir

    2016-01-01

    Full Text Available An in situ thermal annealing process (iTAP has been introduced before the common ex situ cadmium chloride (CdCl2 annealing to improve crystal quality and morphology of the CdTe thin films after pulsed laser deposition of CdS/CdTe heterostructures. A strong correlation between the two annealing processes was observed, leading to a profound effect on the performance of CdS/CdTe thin film solar cells. Atomic force microscopy and Raman spectroscopy show that the iTAP in the optimal processing window produces considerable CdTe grain growth and improves the CdTe crystallinity, which results in significantly improved optoelectronic properties and quantum efficiency of the CdS/CdTe solar cells. A power conversion efficiency of up to 7.0% has been obtained on thin film CdS/CdTe solar cells of absorber thickness as small as 0.75 μm processed with the optimal iTAP at 450°C for 10–20 min. This result illustrates the importance of controlling microstructures of CdTe thin films and iTAP provides a viable approach to achieve such a control.

  5. Fabrication and electrical resistivity of Mo-doped VO2 thin films coated on graphite conductive plates by a sol-gel method

    Energy Technology Data Exchange (ETDEWEB)

    Choi, W.; Jung, H.M.; Um, S. [Hanyang Univ., Seoul (Korea, Republic of). School of Mechanical Engineering

    2008-07-01

    Vanadium oxides (VO2) can be used in optical devices, thermochromic smart windows and sensors. This paper reported on a study in which vanadium pentoxide (V2O5) powder was prepared and mixed with Molybdenum Oxides (MoO3) to form Mo-doped and -undoped VO2 thin films by a sol-gel method on graphite conductive substrates. The micro-structure and chemical compositions of the Mo-doped and -undoped VO2 thin films was investigated using X-Ray diffraction and scanning electron microscopy. Changes in electrical resistivity were measured as a function of the stoichiometric compositions between vanadium and molybdenum. In this study. Mo-doped and -undoped VO2 thin films showed the typical metal to insulator transition (MIT), where temperature range could be adjusted by modifying the dopant atomic ratio. The through-plane substrate structure of the Mo-doped layer influences the electrical resistivity of the graphite substrate. As the amount of the molybdenum increases, the electrical resistivity of the graphite conductive substrate decreases in the lower temperature range below the freezing point of water. The experimental results showed that if carefully controlled, thermal dissipation of VO2 thin films can be used as a self-heating source to melt frozen water with the electrical current flowing through the graphite substrate. 3 refs., 3 figs.

  6. Fabrication of highly conductive and transparent thin films from single-walled carbon nanotubes using a new non-ionic surfactant via spin coating.

    Science.gov (United States)

    Jo, Jea Woong; Jung, Jae Woong; Lee, Jea Uk; Jo, Won Ho

    2010-09-28

    Oligothiophene-terminated poly(ethylene glycol) was synthesized and used as a non-ionic and amphiphilic surfactant for fabricating high-quality single-walled carbon nanotube (SWCNT) films by a simple spin coating method. The absence of charge repulsion between SWCNT/surfactant complexes successfully leads to formation of a dense network of SWCNTs on the substrate through a single deposition of spin coating. When the SWCNT film was treated with nitric acid and thionyl chloride after washed with dichloromethane and water, a high-performance SWCNT film with the sheet resistance of 59 ohm/sq and the transparency of 71% at 550 nm was successfully obtained. Since the SWCNT film exhibits a high value of σ(dc)/σ(ac) (∼17) and excellent dimensional stability after releasing from the substrate, the film can be used as a transparent electrode in flexible optoelectronic devices.

  7. Fabrication of stable, large-area thin-film CdTe photovoltaic modules. Final subcontract report, May 10, 1991--February 28, 1995

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, T.X. [Solar Cells, Inc., Toledo, OH (United States)

    1995-06-01

    During the period of this subcontract, May 1991 through February 1995, Solar Cells, Inc. has developed and demonstrated a low-cost process to fabricate stable large-area cadmium telluride based thin-film photovoltaic modules. This report summarizes the final phase of the project which is concentrated on process optimization and product life tests. One of the major post-deposition process steps, the CdCl{sub 2} heat treatment, has been experimentally replaced with alternative treatments with vapor chloride or chlorine gas. Material and device qualities associated with alternative treatments are comparable or superior to those with the conventional treatment. Extensive experiments have been conducted to optimize the back-electrode structure in order to ensure long term device stability. Numerous small-area cells and minimodules have been subjected to a variety of stress tests, including but not limited to continuous light soak under open or short circuit or with resistive load, for over 10,000 hours. Satisfactory stability has been demonstrated on 48 cm{sup 2} and 64 cm{sup 2} minimodules under accelerated tests and on 7200 cm{sup 2} large modules under normal operating conditions. The conversion efficiency has also been significantly improved during this period. The total area efficiency of 7200 cm{sup 2} module has reached 8.4%, corresponding to a 60.3W normalized output; the efficiency of 64 cm{sup 2} minimodules and 1.1 cm{sup 2} cells has reached 10.5% (aperture area) and 12.4% (total area), respectively.

  8. Large nonlinear optical response of a Bi{sub 1.5}Zn{sub 1.0}Nb{sub 1.5}O{sub 7} thin film fabricated by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ning Tingyin [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Zhou Yueliang, E-mail: ylzhou@aphy.iphy.ac.c [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Lu Heng; Zhang Dongxiang; Yang Guozhen [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Wang Hong [Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xi' an Jiaotong University, Xi' an 710049 (China)

    2009-06-30

    The Bi{sub 1.5}Zn{sub 1.0}Nb{sub 1.5}O{sub 7} (BZN) thin film has been fabricated on MgO (001) substrate by pulsed laser deposition. The nonlinear optical properties of the BZN film were investigated using Z-scan technique at a wavelength of 532 nm with 25 ps pulse duration. The two-photon absorption coefficient and the nonlinear refractive index of the BZN film were obtained to be 4.2 x 10{sup -6} cm/W and 1.6 x 10{sup -10} cm{sup 2}/W respectively, which are comparable with those of some representative nonlinear optical materials. The large and fast response optical nonlinearities indicated that the BZN film is a promising candidate for future photonics devices.

  9. Fabrication of ITO/Ag3SbS3/CdX (X = S, Se) thin film heterojunctions for photo-sensing applications

    Science.gov (United States)

    Daniel, T.; Henry, J.; Mohanraj, K.; Sivakumar, G.

    2016-11-01

    Thin film heterojunctions of Ag3SbS3/CdX (X = S, Se) are deposited on a glass substrate coated with SnO2:In (ITO). The films were characterized by x-ray diffraction (XRD), atomic force microscopy (AFM), UV-visible spectroscopy, photoluminescence spectroscopy, field emission scanning electron microscopy and I-V analysis. XRD reveals the monoclinic structure of Ag3SbS3 and a fcc structure for both CdS and CdSe thin films. The AFM images clearly show the distinct morphological features (nanopyramids, wedge-shaped and rectangular nanorod-like grains). From the I-V studies, under illumination, an ITO/Ag3SbS3/CdS heterojunction produces a higher photocurrent (12.4 mA) than that an ITO/Ag3SbS3/CdSe heterojunction (1.34 mA).

  10. Thin-film metal hydrides.

    Science.gov (United States)

    Remhof, Arndt; Borgschulte, Andreas

    2008-12-01

    The goal of the medieval alchemist, the chemical transformation of common metals into nobel metals, will forever be a dream. However, key characteristics of metals, such as their electronic band structure and, consequently, their electric, magnetic and optical properties, can be tailored by controlled hydrogen doping. Due to their morphology and well-defined geometry with flat, coplanar surfaces/interfaces, novel phenomena may be observed in thin films. Prominent examples are the eye-catching hydrogen switchable mirror effect, the visualization of solid-state diffusion and the formation of complex surface morphologies. Thin films do not suffer as much from embrittlement and/or decrepitation as bulk materials, allowing the study of cyclic absorption and desorption. Therefore, thin-metal hydride films are used as model systems to study metal-insulator transitions, for high throughput combinatorial research or they may be used as indicator layers to study hydrogen diffusion. They can be found in technological applications as hydrogen sensors, in electrochromic and thermochromic devices. In this review, we discuss the effect of hydrogen loading of thin niobium and yttrium films as archetypical examples of a transition metal and a rare earth metal, respectively. Our focus thereby lies on the hydrogen induced changes of the electronic structure and the morphology of the thin films, their optical properties, the visualization and the control of hydrogen diffusion and on the study of surface phenomena and catalysis.

  11. Fabrication and characterization of CuInSe{sub 2} thin films from In{sub 2}Se{sub 3} and Cu{sub 2}Se precursors

    Energy Technology Data Exchange (ETDEWEB)

    Song, Jin Soo [Korea Inst. of Energy and Resources, Daeduk (Korea, Republic of); Huh, Gyung Jae; Kwon, Se Han; Ahn, Byung Tae [Korea Advanced Energy Research Inst., Daeduk-Danji (Korea, Republic of). Korea Nuclear Safety Center

    1995-12-01

    CuInSe{sub 2} this films as a light absorber layer were fabricated by vacuum evaporation using In{sub 2}Se{sub 3} and Cu{sub 2}Se precursors and their properties were analyzed. Indium selenide films of 0.5{mu}m thickness were first deposited by vacuum evaporation of In{sub 2}Se{sub 3} on a Corn ing 7059 glass substrate. The films deposited at susceptor temperature of 400 degree showed a flat surface morphology with densely packed grain structure. CuInSe{sub 2} films directly formed by evaporating Cu{sub 2}Se in the pre-deposited In{sub 2}Se{sub 2} films also showed a very flat surface when the susceptor temperature was 700 degree. Cu{sub 2}Se, a second phase in the CuInSe{sub 2} film, was removed by evaporating additional In{sub 2}Se{sub 3} on the CuInSe{sub 2} film at 700 degree. The grain size of 1.2{mu}m thick CuInSe{sub 2} film was about 2{mu}m and the film had a (112) preferred orientation. As the amount of deposited In{sub 2}Se{sub 3} increased, the electrical resistivity of CuInSe{sub 2} films increased because of the decrease of hole concentration. But the optical band gap was almost constant at the value of 1.04 eV. The CuInSe{sub 2} film grown in a Mo/glass substrate had a similar smooth microstructure compared to that on a glass substrate. A solar cell with ZnO/CdS/CuInSe{sub 2}/Mo structure may be realized based on the above CuInSe{sub 2} films. (author). 16 refs., 11 figs.

  12. Birefringent non-polarizing thin film design

    Institute of Scientific and Technical Information of China (English)

    QI Hongji; HONG Ruijin; HE Hongbo; SHAO Jianda; FAN Zhengxiu

    2005-01-01

    In this paper, 2×2 characteristic matrices of uniaxially anisotropic thin film for extraordinary and ordinary wave are deduced at oblique incidence. Furthermore, the reflectance and transmittance of thin films are calculated separately for two polarizations, which provide a new concept for designing non-polarizing thin films at oblique incidence. Besides, using the multilayer birefringent thin films, non-polarizing designs, such as beam splitter thin film at single wavelength, edge filter and antireflection thin film over visible spectral region are obtained at oblique incidence.

  13. Novel thin-film CuInSe{sub 2} fabrication. Annual subcontract report, 1 May 1992--31 October 1993

    Energy Technology Data Exchange (ETDEWEB)

    Gabor, A.M.; Hermann, A.M. [Colorado Univ., Boulder, CO (United States)

    1994-08-01

    This report describes work exploring a new technique for the formation of Culn{sub x}Ga{sub 1{minus}x}Se{sub 2} thin films. The cu deposition was separated fro the Ga+In deposition such that precursor films with compositions of either Cu{sub x}Se or (In{sub x}Ga{sub 1{minus}x}){sub 2}Se{sub 3} were formed. These precursors were exposed to either (a) In+Ga+Se or (b) cu+Se at substrate temperatures > 500 C to form Galn{sub x}Ga{sub 1{minus}x}Se{sub 2}. Films made from the Cu{sub x}Se precursors were unexceptional, but films made from the (In{sub x}Ga{sub 1{minus}x}){sub 2}Se{sub 3} precursors were of exceptional smoothness and density. During the period covered in this report, a device made fro one of these films resulted in what, at the time, was the highest total-area efficiency measured for any non-single-crystal, thin-film solar cell, at 15.9%.

  14. Room temperature ferroelectricity in continuous croconic acid thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Ahmadi, Zahra; Costa, Paulo S. [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Zhang, Xiaozhe [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Department of Physics, Xi' an Jiaotong University, Xi' an 710049 (China); Wang, Xiao; Yu, Le; Cheng, Xuemei [Department of Physics, Bryn Mawr College, Bryn Mawr, Pennsylvania 19010 (United States); DiChiara, Anthony D. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Gruverman, Alexei, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Enders, Axel, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Xu, Xiaoshan, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588 (United States)

    2016-09-05

    Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50–100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.

  15. Drying of thin colloidal films

    Science.gov (United States)

    Routh, Alexander F.

    2013-04-01

    When thin films of colloidal fluids are dried, a range of transitions are observed and the final film profile is found to depend on the processes that occur during the drying step. This article describes the drying process, initially concentrating on the various transitions. Particles are seen to initially consolidate at the edge of a drying droplet, the so-called coffee-ring effect. Flow is seen to be from the centre of the drop towards the edge and a front of close-packed particles passes horizontally across the film. Just behind the particle front the now solid film often displays cracks and finally the film is observed to de-wet. These various transitions are explained, with particular reference to the capillary pressure which forms in the solidified region of the film. The reasons for cracking in thin films is explored as well as various methods to minimize its effect. Methods to obtain stratified coatings through a single application are considered for a one-dimensional drying problem and this is then extended to two-dimensional films. Different evaporative models are described, including the physical reason for enhanced evaporation at the edge of droplets. The various scenarios when evaporation is found to be uniform across a drying film are then explained. Finally different experimental techniques for examining the drying step are mentioned and the article ends with suggested areas that warrant further study.

  16. Thin-film forces in pseudoemulsion films

    Energy Technology Data Exchange (ETDEWEB)

    Bergeron, V.; Radke, C.J. [California Univ., Berkeley, CA (United States). Dept. of Chemical Engineering]|[Lawrence Berkeley Lab., CA (United States)

    1991-06-01

    Use of foam for enhanced oil recovery (EOR) has shown recent success in steam-flooding field applications. Foam can also provide an effective barrier against gas coning in thin oil zones. Both of these applications stem from the unique mobility-control properties a stable foam possesses when it exists in porous media. Unfortunately, oil has a major destabilizing effect on foam. Therefore, it is important for EOR applications to understand how oil destroys foam. Studies all indicate that stabilization of the pseudoemulsion film is critical to maintain foam stability in the presence of oil. Hence, to aid in design of surfactant formulations for foam insensitivity to oil the authors pursue direct measurement of the thin-film or disjoining forces that stabilize pseudoemulsion films. Experimental procedures and preliminary results are described.

  17. The Structure and Stability of Molybdenum Ditelluride Thin Films

    Directory of Open Access Journals (Sweden)

    Zhouling Wang

    2014-01-01

    Full Text Available Molybdenum-tellurium alloy thin films were fabricated by electron beam evaporation and the films were annealed in different conditions in N2 ambient. The hexagonal molybdenum ditelluride thin films with well crystallization annealed at 470°C or higher were obtained by solid state reactions. Thermal stability measurements indicate the formation of MoTe2 took place at about 350°C, and a subtle weight-loss was in the range between 30°C and 500°C. The evolution of the chemistry for Mo-Te thin films was performed to investigate the growth of the MoTe2 thin films free of any secondary phase. And the effect of other postdeposition treatments on the film characteristics was also investigated.

  18. Research Progress in Fabrication of Boron Carbide Thin Film%碳化硼薄膜制备的研究进展

    Institute of Scientific and Technical Information of China (English)

    范强; 廖志君; 伍登学

    2008-01-01

    The major properties of boron carbide and preparation methods of boron carbide thin film are reviewed.The advantages and important deposition parameters of these methods including DC/RF magnetron sputtering,ion beam evaporation and chemical vapor deposition are discussed,and the measures of improving the performances of boron carbide thin film are pointed out.It is evident from this review that intensive research still remains to be done and how to prepare the homogeneous boron carbide thin films with higher density,higher film-substrate adhesion and lower internal stress is the key study in the future.%综述了碳化硼材料的主要性能和制备碳化硼薄膜的主要方法,讨论了包括磁控溅射、离子束沉积和化学气相沉积等制备方法的优点及重要工艺参数,并就各方法指出了提高薄膜性能的主要措施,指出制备出更均匀、致密的碳化硼薄膜,提高薄膜与基体间的结合力,降低薄膜应力仍是今后研究的重点.

  19. Simple and Rapid Fabrication of Na0.5K0.5NbO3 Thin Films by a Chelate Route

    Directory of Open Access Journals (Sweden)

    A. Fernández Solarte

    2013-01-01

    Full Text Available Na0.5K0.5NbO3 (NKN thin films were prepared by a chelate route which offers the advantage of a simple and rapid solution synthesis. The route is based on the use of acetoin as a chelating agent. The process was optimized by investigating the effects of alkaline volatilization on film properties. While we observed no evidence of stoichiometry problems due to potassium volatilization loss during the heat treatments, thin films synthesized with insufficient sodium excess presented a potassium-rich secondary phase, which has a significant influence on the ferroelectric properties. We show that the amount of spurious phase decreases with increasing Na+ concentration, in such a way that a 20 mol% Na+ excess is necessary to fully compensate the volatilization loss that occurred during the heat treatment. In this way, NKN thin films annealed at 650°C presented a well-crystallized perovskite structure, no secondary phases, well-defined ferroelectric hysteresis loops (Pr~9 μC/cm2, EC~45 kV/cm, and low leakage current density (2×10-7 A/cm2 at 80 kV/cm.

  20. An overview of thin film nitinol endovascular devices.

    Science.gov (United States)

    Shayan, Mahdis; Chun, Youngjae

    2015-07-01

    Thin film nitinol has unique mechanical properties (e.g., superelasticity), excellent biocompatibility, and ultra-smooth surface, as well as shape memory behavior. All these features along with its low-profile physical dimension (i.e., a few micrometers thick) make this material an ideal candidate in developing low-profile medical devices (e.g., endovascular devices). Thin film nitinol-based devices can be collapsed and inserted in remarkably smaller diameter catheters for a wide range of catheter-based procedures; therefore, it can be easily delivered through highly tortuous or narrow vascular system. A high-quality thin film nitinol can be fabricated by vacuum sputter deposition technique. Micromachining techniques were used to create micro patterns on the thin film nitinol to provide fenestrations for nutrition and oxygen transport and to increase the device's flexibility for the devices used as thin film nitinol covered stent. In addition, a new surface treatment method has been developed for improving the hemocompatibility of thin film nitinol when it is used as a graft material in endovascular devices. Both in vitro and in vivo test data demonstrated a superior hemocompatibility of the thin film nitinol when compared with commercially available endovascular graft materials such as ePTFE or Dacron polyester. Promising features like these have motivated the development of thin film nitinol as a novel biomaterial for creating endovascular devices such as stent grafts, neurovascular flow diverters, and heart valves. This review focuses on thin film nitinol fabrication processes, mechanical and biological properties of the material, as well as current and potential thin film nitinol medical applications.

  1. Influence of gold species (AuCl4(-) and AuCl2(-)) on self-assembly of PS-b-P2VP in solutions and morphology of composite thin films fabricated at the air/liquid interfaces.

    Science.gov (United States)

    Zhao, Xingjuan; Wang, Qian; Zhang, Xiaokai; Lee, Yong-Ill; Liu, Hong-Guo

    2016-01-21

    Composite thin films doped with Au species were fabricated at an air/liquid interface via a series of steps, including the mass transfer of polystyrene-b-poly(2-vinylpyridine) (PS-b-P2VP) across the liquid/liquid interface between a DMF/CHCl3 solution and an aqueous solution containing either AuCl4(-) or AuCl2(-), self-assembly of PS-b-P2VP in a mixed DMF-water solution, and adsorption and further self-organization of the formed aggregates at the air/liquid interface. This is a new approach for fabricating composite polymer films and can be completed within a very short time. AuCl4(-) and AuCl2(-) ions were found to significantly influence the self-assembly behavior of the block copolymer and the morphologies of the composite films, leading to the formation of nanowire arrays and a foam structure at the air/liquid interface, respectively, which originated from rod-like micelles and microcapsules that had formed in the respective solutions. The effect of the metal complex was analyzed based on the packing parameters of the amphiphilic polymer molecules in different microenvironments and the interactions between the pyridine groups and the metal chloride anions. In addition, these composite thin films exhibited stable and durable performance as heterogeneous catalysts for the hydrogenation of nitroaromatics in aqueous solutions.

  2. Beryllium thin films for resistor applications

    Science.gov (United States)

    Fiet, O.

    1972-01-01

    Beryllium thin films have a protective oxidation resistant property at high temperature and high recrystallization temperature. However, the experimental film has very low temperature coefficient of resistance.

  3. Triboelectric Nanogenerator Using Lithium Niobate Thin Film

    Science.gov (United States)

    Geng, Juan; Zhang, Xinzheng; Kong, Yongfa; Xu, Jingjun

    2017-06-01

    We present a triboelectric nanogenerator (TENG) using a lithium niobate thin film, as one of the triboelectric pairs which was grown on a silicon substrate by laser molecule beam epitaxy (LMBE). The designed TENG has the advantages of simple structure, easy fabrication, small size (1.1*1.0*0.15 cm3). An open-circuit voltage of 136 V and a short-circuit current of 8.40 μA have been achieved. The maximum output power is 307.5μW under the load resistance of 10MΩ. This is the first time to use lithium niobate thin film as one of the friction pair, which may make it possible to expand the application of triboelectric nanogenerator to optical field.

  4. Thin-film solar cell

    OpenAIRE

    Metselaar, J.W.; Kuznetsov, V. I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with the light-collecting surface. In this context, the relationships 45 < alpha < 135 degrees and 45 < beta < 135 degrees apply. The invention also relates to a panel provided with a plurality of such t...

  5. Thin-film solar cell

    OpenAIRE

    Metselaar, J.W.; V. I. Kuznetsov

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with the light-collecting surface. In this context, the relationships 45 < alpha < 135 degrees and 45 < beta < 135 degrees apply. The invention also relates to a panel provided with a plurality of such t...

  6. Research on fabrication technology for thin film solar cells for practical use. Technological development for qualitative improvement (CuInSe2 based PV cell); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Kohinshitsuka gijutsu (CuInSe2 taiyo denchi seizo no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M. [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on the fabrication technology of CuInSe2 based PV cell in fiscal 1994. (1) On formation of high-quality CIGS thin films by bilayer method, Mo film was deposited on a glass substrate by sputtering, and CIGS film with different Ga/In ratios was next formed on the substrate by quaternary simultaneous deposition at different In and Ga deposition speeds. In addition, CdS film was deposited on the CIGS film, and ZnO and ITO films were finally deposited on it by sputtering to complete solar cell. This solar cell offered the maximum conversion efficiency among cells using CIGS film. (2) On formation of high-quality CIGS thin films by three-stage method, a certain correlation was found between substrate temperature and CIGS film composition by monitoring substrate temperature in film forming process. This phenomenon allowed rigorous control of CIS film compositions important for CIS thin film solar cells. (3) On low-cost process technology for thin film formation, Cu(In,Ga)S2 solid solution film was fabricated by expanded selenic process. 3 figs.

  7. Correlation between physical properties and growth mechanism of In2S3 thin films fabricated by electrodeposition technique with different deposition times

    Science.gov (United States)

    Braiek, Zied; Gannouni, Mounir; Ben Assaker, Ibtissem; Bardaoui, Afrah; Lamouchi, Amina; Brayek, A.; Chtourou, Radhouane

    2015-10-01

    Indium sulfide (In2S3) thin films were grown on ITO-coated glass substrate using the electrodeposition method. The effect of the deposition time on the structural, morphological, optical and electrical properties of the as-grown In2S3 thin films was studied. XRD spectra of the obtained films reveal the polycrystalline nature of (β-In2S3) with a tetragonal crystal structure along the (109) plane, and exhibit a sharp transition to the (0012) plane when the deposition time is extended beyond 20 min. Using atomic force microscope (AFM), the surface morphology shows a remarkable change in the grain size, thickness, and surface roughness when varying the deposition time. UV-VIS spectrophotometer show that the optical band gap values of In2S3 decrease from about 2.82 to 1.93 eV by extending the electrodeposition duration from 5 to 20 min. All films were found to have an n-type character with a lower electrical resistivity of about 1.8×10-3 Ω cm for films deposited at 20 min.

  8. Organic photo detectors for an integrated thin-film spectrometer

    Science.gov (United States)

    Peters, Sabine; Sui, Yunwu; Glöckler, Felix; Lemmer, Uli; Gerken, Martina

    2007-09-01

    We introduce a thin-film spectrometer that is based on the superprism effect in photonic crystals. While the reliable fabrication of two and three dimensional photonic crystals is still a challenge, the realization of one-dimensional photonic crystals as thin-film stacks is a relatively easy and inexpensive approach. Additionally, dispersive thin-film stacks offer the possibility to custom-design the dispersion profile according to the application. The thin-film stack is designed such that light incident at an angle experiences a wavelength-dependent spatial beam shift at the output surface. We propose the monolithic integration of organic photo detectors to register the spatial beam position and thus determine the beam wavelength. This thin-film spectrometer has a size of approximately 5 mm2. We demonstrate that the output position of a laser beam is determined with a resolution of at least 20 μm by the fabricated organic photo detectors. Depending on the design of the thin-film filter the wavelength resolution of the proposed spectrometer is at least 1 nm. Possible applications for the proposed thin-film spectrometer are in the field of absorption spectroscopy, e.g., for gas analysis or biomedical applications.

  9. Growth of cuprate high temperature superconductor thin films

    Directory of Open Access Journals (Sweden)

    H-U Habermeier

    2006-09-01

    Full Text Available   This paper reviews briefly the development of physical vapour deposition based HTS thin film preparation technologies to today’s state-of-the-art methods. It covers the main trends of in-situ process and growth control. The current activities to fabricate tapes for power applications as well as to tailor interfaces in cuprate are described. Some future trends in HTS thin film research, both for science as well as application driven activities are outlined.

  10. Nonlinear Absorption Properties of nc-Si:H Thin Films

    Institute of Scientific and Technical Information of China (English)

    GUO Zhenning; GUO Hengqun; LI Shichen; HUANG Yongzhen; WANG Qiming

    2001-01-01

    It is reported in this paper that the phenomenon of the saturated absorption of the exciton in hydrogenated nanocrystalline silicon (nc-Si:H) thin film fabricated by plasma enhanced chemical vapor deposition (PECVD) without any post-processing is observed at room temperature using pump-probe technology. This nonlinear optical absorption property is induced by the surface effect of the silicon nanoparticles in nc-Si:H thin films.

  11. Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

    KAUST Repository

    Chernikova, Valeriya

    2017-05-10

    Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

  12. Form Birefringence in Thin Films with Oblique Columnar Structures

    Institute of Scientific and Technical Information of China (English)

    WANG Jian-Guo; SHAO Jian-Da; WANG Su-Mei; HE Hong-Bo; FAN Zheng-Xiu

    2005-01-01

    @@ Effective medium theory is useful for designing optical elements with form birefringent subwavelength structures. Thinfilms fabricated by oblique deposition are similar to the two-dimensional surface relief subwavelength gratings. We use the effective medium theory to calculate the anisotropic optical properties of the thin films with oblique columnar structures. The effective refractive indices and the directions are calculated from effective medium theory. It is shown that optical thin films with predetermined refractive indices and birefringence may be engineered.

  13. Continuous wave infrared laser deposition of organic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yaginuma, Seiichiro [Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503 (Japan); Yamaguchi, Jun [Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503 (Japan); Haemori, Masamitsu [Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503 (Japan); Itaka, Kenji [Department of Advanced Materials Science, Graduate School of Frontier Sciences, Univesity of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8568 (Japan); Matsumoto, Yuji [Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503 (Japan); Kondo, Michio [Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503 (Japan); Koinuma, Hideomi [Department of Advanced Materials Science, Graduate School of Frontier Sciences, Univesity of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8568 (Japan)

    2007-04-15

    We developed a continuous-wave infrared laser molecular beam epitaxy (CW-IR-LMBE) optimized for the fabrication of organic semiconductor films. The crystal quality of these organic thin films deposited by CW-IR-LMBE was substantially the same as those deposited by thermal evaporation. Due to the possibility of quick switching of evaporation sources, CW-IR-LMBE is especially advantageous for rapid screening of composition, thickness, and fabrication parameters in materials and device optimization based on combinatorial technology.

  14. Angular magnetoresistance in semiconducting undoped amorphous carbon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sagar, Rizwan Ur Rehman; Saleemi, Awais Siddique; Zhang, Xiaozhong, E-mail: xzzhang@tsinghua.edu.cn [Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People' s Republic of China and Beijing National Center for Electron Microscopy, Beijing 100084 (China)

    2015-05-07

    Thin films of undoped amorphous carbon thin film were fabricated by using Chemical Vapor Deposition and their structure was investigated by using High Resolution Transmission Electron Microscopy and Raman Spectroscopy. Angular magnetoresistance (MR) has been observed for the first time in these undoped amorphous carbon thin films in temperature range of 2 ∼ 40 K. The maximum magnitude of angular MR was in the range of 9.5% ∼ 1.5% in 2 ∼ 40 K. The origin of this angular MR was also discussed.

  15. Structural, optical and microwave dielectric studies of Co doped MgTiO3 thin films fabricated by RF magnetron sputtering

    Science.gov (United States)

    Santhosh Kumar, T.; Gogoi, Pallabi; Bhasaiah, S.; Raju, K. C. James; Pamu, D.

    2015-05-01

    We report the structural, optical, and microwave dielectric characteristics of (Mg0.95Co0.05)TiO3 (MCT) thin films deposited onto amorphous SiO2 (a-SiO2) substrates by RF magnetron sputtering for the first time. The role of the oxygen mixing percentage (OMP) on the growth, morphology, optical, and microwave dielectric properties of MCT thin films has been investigated. The as-deposited MCT films were x-ray amorphous and crystallined after annealing at 700 °C for 1 h in air. A preferred orientation of grains along the (110) direction has been observed with increasing OMP. Such a textured growth is explained by calculating the orientation factors from the Lotgering model. The dispersion in a refractive index with wavelength has been explained using a single oscillator dispersion model. Both the refractive index and bandgap of the films increases on annealing. The annealed films exhibit refractive indices in the range of 1.88-2.08 at 600 nm with an optical bandgap value between 3.95-4.16 eV. The increase in the refractive index is attributed to the improvement in packing density and crystallinity, and decrease in the porosity ratio, whereas the increase in bandgap is due to the decrease in intermediary energy levels within the optical bandgap. (Mg0.95Co0.05)TiO3 thin films exhibited a progressive increase in the dielectric properties with OMP and a maximum dielectric constant of ɛr = 17.3 and low loss (tanδ ˜ 1.1 × 10-3) at a spot frequency of 10 GHz for the films deposited at 75% OMP, beyond which they decreased. The improvement in dielectric properties with an increase in OMP has been correlated to the preferred orientation growth, reduction in oxygen vacancies, and strain. The prepared MCT thin films are suitable candidates for anti-reflection coatings and complementary metal-oxide semiconductor (CMOS) applications.

  16. Polycrystalline thin film materials and devices

    Energy Technology Data Exchange (ETDEWEB)

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. (Delaware Univ., Newark, DE (United States). Inst. of Energy Conversion)

    1992-10-01

    Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed.

  17. Fabrication and investigation of 1D and 2D structures in LiNbO 3 thin films by pulsed laser ablation

    Science.gov (United States)

    Meriche, F.; Boudrioua, A.; Kremer, R.; Dogheche, E.; Neiss-Clauss, E.; Mouras, R.; Fischer, A.; Beghoul, M.-R.; Fogarassy, E.; Boutaoui, N.

    2010-09-01

    Lithium niobate thin films were deposited on sapphire substrate by radio-frequency magnetron sputtering technique. One and two dimensional structures have been made using a KrF excimer laser at 248 nm and 6 ns pulse width, under various conditions of ablation, in order to assess the applicability of laser direct-writing of photonic waveguides. The optical and waveguiding properties of LiNbO 3 thin films were studied by prism-coupling technique, while micro-Raman spectroscopy was used for structural and composition characterization, as well as laser processing mechanism investigation. The surface morphology of the processed structures was obtained by a Nomarski optical microscope, an atomic force microscope and a White Light Interferometer Microscope.

  18. Ferroelectric thin-film active sensors for structural health monitoring

    Science.gov (United States)

    Lin, Bin; Giurgiutiu, Victor; Yuan, Zheng; Liu, Jian; Chen, Chonglin; Jiang, Jiechao; Bhalla, Amar S.; Guo, Ruyan

    2007-04-01

    Piezoelectric wafer active sensors (PWAS) have been proven a valuable tool in structural health monitoring. Piezoelectric wafer active sensors are able to send and receive guided Lamb/Rayleigh waves that scan the structure and detect the presence of incipient cracks and structural damage. In-situ thin-film active sensor deposition can eliminate the bonding layer to improve the durability issue and reduce the acoustic impedance mismatch. Ferroelectric thin films have been shown to have piezoelectric properties that are close to those of single-crystal ferroelectrics but the fabrication of ferroelectric thin films on structural materials (steel, aluminum, titanium, etc.) has not been yet attempted. In this work, in-situ fabrication method of piezoelectric thin-film active sensors arrays was developed using the nano technology approach. Specification for the piezoelectric thin-film active sensors arrays was based on electro-mechanical-acoustical model. Ferroelectric BaTiO3 (BTO) thin films were successfully deposited on Ni tapes by pulsed laser deposition under the optimal synthesis conditions. Microstructural studies by X-ray diffractometer and transmission electron microscopy reveal that the as-grown BTO thin films have the nanopillar structures with an average size of approximately 80 nm in diameter and the good interface structures with no inter-diffusion or reaction. The dielectric and ferroelectric property measurements exhibit that the BTO films have a relatively large dielectric constant, a small dielectric loss, and an extremely large piezoelectric response with a symmetric hysteresis loop. The research objective is to develop the fabrication and optimum design of thin-film active sensor