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Sample records for fabricating light emitting

  1. Fabrication of multipoint light emitting optical fibers for optogenetics

    Science.gov (United States)

    Sileo, Leonardo; Pisanello, Marco; De Vittorio, Massimo; Pisanello, Ferruccio

    2015-03-01

    Multipoint Light Emitting Optical Fibers (MPF) has been recently demonstrated as a versatile tool for spatially addressable optogenetics experiments. Their fabrication has been possible thanks to a number of key microfabrication technologies, in particular the unique nanofabrication capabilities of a Focused Ion Beam. This work provides the complete description of MPF fabrication, detailing the optimization process for each fabrication step.

  2. Fabrication of natural DNA-containing organic light emitting diodes

    Science.gov (United States)

    Gomez, Eliot F.; Spaeth, Hans D.; Steckl, Andrew J.; Grote, James G.

    2011-09-01

    The process of creating natural DNA-containing bio-organic light emitting diodes is a fascinating journey from salmon fish to the highly-efficient BiOLED. DNA from salmon sperm is used as a high-performance electron blocking layer, to enhance the efficiency of the BiOLED over its conventional OLED counterpart. An overview of the BiOLED fabrication process and its key steps are presented in this paper.

  3. Fabrication of InGaN/GaN nanopillar light-emitting diode arrays

    DEFF Research Database (Denmark)

    Ou, Yiyu; Fadil, Ahmed; Ou, Haiyan

    Nanopillar InGaN/GaN green light-emitting diode arrays were fabricated by using self-assembled nanopatterning and dry etching process. Both internal and external quantum efficiency were increased due to strain relaxation and enhanced light extraction.......Nanopillar InGaN/GaN green light-emitting diode arrays were fabricated by using self-assembled nanopatterning and dry etching process. Both internal and external quantum efficiency were increased due to strain relaxation and enhanced light extraction....

  4. Soft lithography microlens fabrication and array for enhanced light extraction from organic light emitting diodes (OLEDs)

    Science.gov (United States)

    Leung, Wai Y.; Park, Joong-Mok; Gan, Zhengqing; Constant, Kristen P.; Shinar, Joseph; Shinar, Ruth; ho, Kai-Ming

    2014-06-03

    Provided are microlens arrays for use on the substrate of OLEDs to extract more light that is trapped in waveguided modes inside the devices and methods of manufacturing same. Light extraction with microlens arrays is not limited to the light emitting area, but is also efficient in extracting light from the whole microlens patterned area where waveguiding occurs. Large microlens array, compared to the size of the light emitting area, extract more light and result in over 100% enhancement. Such a microlens array is not limited to (O)LEDs of specific emission, configuration, pixel size, or pixel shape. It is suitable for all colors, including white, for microcavity OLEDs, and OLEDs fabricated directly on the (modified) microlens array.

  5. Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Junghwan, E-mail: JH.KIM@lucid.msl.titech.ac.jp; Miyokawa, Norihiko; Ide, Keisuke [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Toda, Yoshitake [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama (Japan)

    2016-01-15

    We propose a light-emitting thin film using an amorphous oxide semiconductor (AOS) because AOS has low defect density even fabricated at room temperature. Eu-doped amorphous In-Ga-Zn-O thin films fabricated at room temperature emitted intense red emission at 614 nm. It is achieved by precise control of oxygen pressure so as to suppress oxygen-deficiency/excess-related defects and free carriers. An electronic structure model is proposed, suggesting that non-radiative process is enhanced mainly by defects near the excited states. AOS would be a promising host for a thin film phosphor applicable to flexible displays as well as to light-emitting transistors.

  6. Device Fabrication of 60 μm Resonant Cavity Light-Emitting Diode

    Directory of Open Access Journals (Sweden)

    J. J. C. Reyes

    2004-12-01

    Full Text Available An array of 60-mm-diameter resonant cavity light-emitting diodes suited for coupling with fiber opticwere fabricated using standard device fabrication technique. I-V characterization was used to determinethe viability of the device fabricating process. Under forward bias, the turn-on voltage of the devices is1.95–2.45 V with a series resistance of 17–14 kW. Under reverse bias, the devices showed a breakdownvoltage of 35 V.

  7. Light-emitting diodes fabricated on an electrical conducting flexible substrate

    Science.gov (United States)

    Choi, Won-Sik; Kim, Wan Jae; Park, Si-Hyun; Cho, Sung Oh; Lee, June Key; Park, Jun Beom; Ha, Jun-Seok; Chung, Tae Hoon; Jeong, Tak

    2017-01-01

    An array of InGaN-based flexible light-emitting diodes (FLEDs) was fabricated on a Ni-embedded electrical conducting flexible fabric with a full-scale 2-in. size. The FLED chip operation under current injection was realized using a single current probe as the negative electrode on the n-GaN surface; the conducting substrate was used as the positive electrode. The stability of the output power in the FLEDs was improved dramatically on the Ni-embedded conducting flexible fabric compared to that on the conventional polyimide flexible substrate. The former showed linear operation up to an input current 950 mA with no wavelength shift, whereas the latter exhibited rolling-over behavior after an input current of 200 mA.

  8. Ambient fabrication of flexible and large-area organic light-emitting devices using slot-die coating

    DEFF Research Database (Denmark)

    Sandstrom, Andreas; Dam, Henrik Friis; Krebs, Frederik C;

    2012-01-01

    The grand vision of manufacturing large-area emissive devices with low-cost roll-to-roll coating methods, akin to how newspapers are produced, appeared with the emergence of the organic light-emitting diode about 20 years ago. Today, small organic light-emitting diode displays are commercially...... available in smartphones, but the promise of a continuous ambient fabrication has unfortunately not materialized yet, as organic light-emitting diodes invariably depend on the use of one or more time-and energy-consuming process steps under vacuum. Here we report an all-solution-based fabrication...... of an alternative emissive device, a light-emitting electrochemical cell, using a slot-die roll-coating apparatus. The fabricated flexible sheets exhibit bidirectional and uniform light emission, and feature a fault-tolerant >1-mu m-thick active material that is doped in situ during operation. It is notable...

  9. Study of natural organic dyes as active material for fabrication of organic light emitting diodes

    Science.gov (United States)

    Sánchez Juárez, A.; Castillo, D.; Guaman, A.; Espinosa, S.; Obregón, D.

    2016-09-01

    The scientific community and some sectors of industry have been working with organic dyes for successful applications in OLED's, OSC's, however, most of the used dyes and pigments are synthetic. In this work is investigated the use of natural dyes for its application in organic light emitting diodes, some of the studied species are chili, blackberry, guayacan flower, cochinilla, tree tomato, capuli, etc. In this study the dyes are deposited by direct deposition and SOL-GEL process doped with the natural organic dye, both methods show good performance and lower fabrication costs for dye extraction, this represents a new alternative for the fabrication of OLED devices with low requirements in technology. Most representative results are presented for Dactylopius Coccus Costa (cochinilla) and raphanus sativus' skin.

  10. Fabrication and characterization of 395 nm ultraviolet GaN light-emitting diodes

    Science.gov (United States)

    Lin, Min-Pang; Chen, Chien-Ju; Shan, Li-Wei; Wu, Meng-Chyi

    2017-09-01

    In this article, we demonstrated the fabrication and characterization of 395 nm GaN ultraviolet light-emitting diodes grown on patterned sapphire substrates. The current confining aperture is designed as 45, 55, 65, 75 and 85 μm. The indium tin oxide (ITO) was used as a current spreading layer. Use the metals of nickel and gold to form ohmic contact with P-AlGaN layer prior to dry etching. The 45-μm-diameter LED exhibits a 3-dB modulation bandwidth of 134 MHz at 50 mA and a light output power density of 1.2 mW (78 W/cm2) at 30 mA. In addition, the 3-dB frequency bandwidth is proportional to the square root of the injected current density.

  11. Fabrication of white light-emitting diodes based on UV light-emitting diodes with conjugated polymers-(CdSe/ZnS) quantum dots as hybrid phosphors.

    Science.gov (United States)

    Jung, Hyunchul; Chung, Wonkeun; Lee, Chang Hun; Kim, Sung Hyun

    2012-07-01

    White light-emitting diodes (LEDs) were fabricated using GaN-based 380-nm UV LEDs precoated with the composite of blue-emitting polymer (poly[(9,9-dihexylfluorenyl-2,7-diyl)-alt-co-(2-methoxy-5-{2-ethylhexyloxy)-1 ,4-phenylene)]), yellow green-emitting polymer (poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-benzo-{2,1',3}-thiadiazole)]), and 605-nm red-emitting quantum dots (QDs). CdSe cores were obtained by solvothermal route using CdO, Se precursors and ZnS shells were synthesized by using diethylzinc, and hexamethyldisilathiane precursors. The optical properties of CdSe/ZnS QDs were characterized by UV-visible and photoluminescence (PL) spectra. The structural data and composition of the QDs were transmission electron microscopy (TEM), and EDX technique. The quantum yield and size of the QDs were 58.7% and about 6.7 nm, respectively. Three-band white light was generated by hybridizing blue (430 nm), green (535 nm), and red (605 nm) emission. The color-rendering index (CRI) of the device was extremely improved by introducing the QDs. The CIE-1931 chromaticity coordinate, color temperature, and CRI of a white LED at 20 mA were (0.379, 0.368), 3969 K, and 90, respectively.

  12. Fabrication of organic light-emitting diode pixels by laser-assisted forward transfer

    Science.gov (United States)

    Fardel, Romain; Nagel, Matthias; Nüesch, Frank; Lippert, Thomas; Wokaun, Alexander

    2007-08-01

    Fabrication of a polymer light-emitting device was achieved by a laser forward transfer technique using the decomposition of a thin triazene polymer film by a XeCl excimer laser. The dry deposition process allows transfer of a bilayer consisting of the electroluminescent polymer poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] covered with an aluminum electrode onto a receiver substrate. The soft transfer results in laterally well resolved pixels (≈500μm), whose fluorescence as well as electroluminescence spectra remain unaltered. The rectifying and smooth current-voltage characteristics add to the merits of this laser-based transfer method that opens up the possibility of direct-writing heat- and UV-sensitive materials.

  13. Flexible organic light emitting diodes fabricated on biocompatible silk fibroin substrate

    Science.gov (United States)

    Liu, Yuqiang; Xie, Yuemin; Liu, Yuan; Song, Tao; Zhang, Ke-Qin; Liao, Liangsheng; Sun, Baoquan

    2015-10-01

    Flexible and biodegradable electronics are currently under extensive investigation for biocompatible and environmentally-friendly applications. Synthetic plastic foils are widely used as substrates for flexible electronics. But typical plastic substrates such as polyethylene naphthalate (PEN) could not be degraded in a natural bio-environment. A great demand still exists for a next-generation biocompatible and biodegradable substrate for future application. For example, electronic devices can be potentially integrated into the human body. In this work, we demonstrate that the biocompatible and biodegradable natural silk fibroin (SF) films embedded with silver nanowires (AgNWs) mesh could be employed as conductive transparent substrates to fabricate flexible organic light emitting diodes (OLEDs). Compared with commercial PEN substrates coated with indium tin oxide, the AgNWs/SF composite substrates exhibit a similar sheet resistance of 12 Ω sq-1, a lower surface roughness, as well as a broader light transmission range. Flexible OLEDs based on AgNWs/SF substrates achieve a current efficiency of 19 cd A-1, demonstrating the potential of the flexible AgNWs/SF films as conductive and transparent substrates for next-generation biodegradable devices.

  14. Inkjet printed polymer light-emitting devices fabricated by thermal embedding of semiconducting polymer nanospheres in an inert matrix

    Science.gov (United States)

    Fisslthaler, Evelin; Sax, Stefan; Scherf, Ullrich; Mauthner, Gernot; Moderegger, Erik; Landfester, Katharina; List, Emil J. W.

    2008-05-01

    An aqueous dispersion of semiconducting polymer nanospheres was used to fabricate polymer light-emitting devices by inkjet printing in an easy-to-apply process with a minimum feature size of 20μm. To form the devices, the electroluminescent material was printed on a nonemitting polystyrene matrix layer and embedded by thermal annealing. The process allows the printing of light-emitting thin-film devices without extensive optimization of film homogeneity and thickness of the active layer. Optical micrographs of printed device arrays, electroluminescence emission spectra, and I /V characteristics of printed ITO/PEDOT:PSS/PS/SPN/Al devices are presented.

  15. Fabrication of an Organic Light-Emitting Diode from New Host π Electron Rich Zinc Complex

    Science.gov (United States)

    Jafari, Mohammad Reza; Janghouri, Mohammad; Shahedi, Zahra

    2016-09-01

    A new π electron rich zinc complex was used as a fluorescent material in organic light-emitting diodes (OLEDs). Devices with a structure of indium tin oxide/poly (3,4-ethylenedi-oxythiophene):poly(styrenesulfonate) (PEDOT: PSS) (50 nm)/polyvinylcarbazole (60 nm)/Zn: %2 porphyrin derivatives (45 nm)/Al (150 nm) were fabricated. Porphyrin derivatives accounting for 2 wt.% in the π electron rich zinc complex were used as a host. The electroluminescence (EL) spectra of porphyrin derivatives indicated a red shift, as π electron rich zinc complex EL spectra. The device (4) has also a luminance of 3420 cd/m2 and maximum efficiency of 1.58 cd/A at 15 V, which are the highest values among four devices. The result of Commission International del'Eclairage (CIE) (X, Y) coordinate and EL spectrum of device (3) indicated that it is more red shifted compared to other devices. Results of this work indicate that π electron rich zinc complex is a promising host material for high efficiency red OLEDs and has a simple structure compared to Alq3-based devices.

  16. Eutectic Bonding Utilizing Radio Frequency Induction Heating for Fabricating Vertical Light-Emitting Diodes.

    Science.gov (United States)

    Choi, Eunmi; Kim, Areum; Cui, Yinhua; Chae, Su Jin; Nam, Minwoo; Kwon, Soon Hyeong; Cha, Yong Won; Pyo, Sung Gyu

    2015-11-01

    Vertical light-emitting diodes (VLEDs) have attracted considerable attention owing to their improved thermal, electrical, and optical performance compared to conventional LEDs. To fabricate VLEDs, a bonding technique is required following laser lift-off. Eutectic bonding techniques are preferred owing to their low-heat mechanism and production safety. However, the conventional resistance heating method for eutectic bonding process, the extremely longer process time becomes a problem such as cost rise, wapage. In this study, the thermal efficiency was measured according to the diameter of the coil in order to optimize the eutectic bonding of the RF induction heating method in order to solve this problem. We confirmed that successful eutectic bonding is possible with less than 30 min processing using Sn-Glass. In addition, Au (20 wt%)/Sn (80 wt%) alloy, a mainly used the eutectic bonding interlayer material for VLEDs, can also be used as an interlayer to provide void-free eutectic bonding in less than 30 min.

  17. Fabrication and Characterization of Micro-membrane GaN Light Emitting Diodes

    KAUST Repository

    Liao, Hsien-Yu

    2015-05-01

    Developing etching of GaN material system is the key to device fabrications. In this thesis, we report on the fabrication of high throughput lift-off of InGaN/GaN based micro-membrane light emitting diode (LED) from sapphire substrate using UV-assisted photoelectroless chemical (PEsC) etching. Unlike existing bandgap selective etching based on unconventional sacrificial layer, the current hydrofluoric acid based wet etching process enables the selective etching of undoped GaN layer already incorporated in standard commercial LED structures, thus attaining the leverage on high performance device design, and facile wet process technology. The lift-off micro-membrane LED showed 16% alleviated quantum efficiency droop under 200 mA/cm2 current injection, demonstrating the advantage of LED epitaxy exfoliation from the lattice-mismatched sapphire substrate. The origin of the performance improvement was investigated based on non-destructive characterization methods. Photoluminescence (PL) characterization showed a 7nm peak emission wavelength shift in the micro-membrane LED compared to the GaN-on-Sapphire LED. The Raman spectroscopy measurements correlate well with the PL observation that a 0.86 GPa relaxed compressive biaxial strain was achieved after the lift-off process. The micro-membrane LED technology enables further heterogeneous integration for forming pixelated red, green, blue (RGB) display on flexible and transparent substrate. The development of discrete and membrane LEDs using nano-fiber paper as the current spreading layer was also explored for such integration.

  18. Semiconductor Nanowire Light Emitting Diodes Grown on Metal: A Direction towards Large Scale Fabrication of Nanowire Devices

    OpenAIRE

    Sarwar, A. T. M. Golam; Carnevale, Santino D.; Yang, Fan; Kent, Thomas F.; Jamison, John J.; McComb, David W.; Myers, Roberto C.

    2015-01-01

    Bottom up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating dislocations. The resulting nanowires are used to fabricate light emitting diodes (LEDs), lasers, solar cells and sensors. However, expensive single crystalline substrates are commonly used as substrates for nanowire heterostructures as well as for epitaxial d...

  19. Fabrication and Investigation of an Upconversion Quantum-Well Infrared Photodetector Integrated with a Light-Emitting Diode

    Institute of Scientific and Technical Information of China (English)

    ZHEN Hong-Lou; LI Ning; XIONG Da-Yuan; ZHOU Xu-Chang; LU Wei; LIU Hui-Chun

    2005-01-01

    @@ We report the fabrication of an upconversion infrared detector, i.e. a quantum well infrared photodetector integrated with a light-emitting diode (named as QWIP-LED). The infrared photo-response spectrum in the upconversion process is in good agreement with the normal photocurrent spectrum of the QWIP, which demonstrates that the long wavelength infrared band at 8μm has been transferred to the near infrared band at 0.8μmby the upconversion process.

  20. Application of exciplex in the fabrication of white organic light emitting devices with mixed fluorescent and phosphorescent layers

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Dan; Duan, Yahui; Yang, Yongqiang [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science & Engineering, Jilin University, Changchun 130012 (China); Hu, Nan [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science & Engineering, Jilin University, Changchun 130012 (China); Changchun University of Science and Technology, Changchun 130012 (China); Wang, Xiao [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science & Engineering, Jilin University, Changchun 130012 (China); Sun, Fengbo [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science & Engineering, Jilin University, Changchun 130012 (China); Changchun University of Science and Technology, Changchun 130012 (China); Duan, Yu, E-mail: duanyu@jlu.edu.cn [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science & Engineering, Jilin University, Changchun 130012 (China)

    2015-10-15

    In this study, a highly efficient fluorescent/phosphorescent white organic light-emitting device (WOLED) was fabricated using exciplex light emission. The hole-transport material 4,4',4''-tris(N-carbazolyl)triphenylamine (TCTA), and electron-transport material, 4,7-diphenyl-1,10-phenanthroline (Bphen), were mixed to afford a blue-emitting exciplex. The WOLED was fabricated with a yellow phosphorescent dye, Ir(III) bis(4-phenylthieno [3,2-c] pyridinato-N,C{sup 2'}) acetylacetonate (PO-01), combined with the exciplex. In this structure, the energy can be efficiently transferred from the blend layer to the yellow phosphorescent dye, thus improving the efficiency of the utilization of the triplet exciton. The maximum power efficiency of the WOLED reached a value 9.03 lm/W with an external quantum efficiency of 4.3%. The Commission Internationale de I'Eclairage (CIE) color coordinates (x,y) of the device were from (0.39, 0.45) to (0.27, 0.31), with a voltage range of 4–9 V. - Highlights: • An exciplex/phosphorescence hybrid white OLED was fabricated for the first time with blue/orange complementary emitters. • By using exciplex as the blue emitter, non-radiative triplet-states on the exciplex can be harvested for light-emission by transferring them to low triplet-state phosphors.

  1. A europium(III) organic ternary complex applied in fabrication of near UV-based white light-emitting diodes

    Science.gov (United States)

    Wang, H.; He, P.; Liu, S.; Shi, J.; Gong, M.

    2009-10-01

    A β-diketone, 2-acetylfluorene-4,4,4-trifluorobutane-1,3-dione (HAFTFBD), and its three europium(III) complexes, Eu(AFTFBD)3ṡ2H2O, Eu(AFTFBD)3(TPPO)2 and Eu(AFTFBD)3phen, were designed and synthesized, where TPPO was triphenylphosphine oxide and phen was 1,10-phenanthroline. The complexes were characterized by IR, UV-visible, photoluminescence (PL) spectroscopy and thermogravimetric analysis (TGA). The results show that the Eu(III) complexes exhibit a high thermal stability,and wide and strong excitation bands when monitored at 613 nm. Excited by ˜395 nm near UV light, the complexes emitted strong and characteristic red light due to f- f transitions of the central Eu3+ ion, and no emission from the ligands was found. The photoluminescence mechanism of the europium(III) complexes was investigated and proposed as a ligand-sensitized luminescence process. Among the three europium(III) complexes, Eu(AFTFBD)3phen exhibits the highest thermal stability and the most excellent photoluminescence properties. A bright red light-emitting diode was fabricated by coating the Eu(AFTFBD)3phen complex onto an ˜395 nm-emitting InGaN chip, and the LED showed appropriate CIE chromaticity coordinates ( x=0.66, y=0.33). A white LED with CIE chromaticity coordinates ( x=0.32, y=0.32) was prepared with Eu(AFTFBD)3phen as red phosphor, indicating that Eu(AFTFBD)3phen can be applied as a red component for fabrication of near ultraviolet-based white light-emitting diodes.

  2. Fabrication, characterization and applications of flexible vertical InGaN micro-light emitting diode arrays.

    Science.gov (United States)

    Tian, Pengfei; McKendry, Jonathan J D; Gu, Erdan; Chen, Zhizhong; Sun, Yongjian; Zhang, Guoyi; Dawson, Martin D; Liu, Ran

    2016-01-11

    Flexible vertical InGaN micro-light emitting diode (micro-LED) arrays have been fabricated and characterized for potential applications in flexible micro-displays and visible light communication. The LED epitaxial layers were transferred from initial sapphire substrates to flexible AuSn substrates by metal bonding and laser lift off techniques. The current versus voltage characteristics of flexible micro-LEDs degraded after bending the devices, but the electroluminescence spectra show little shift even under a very small bending radius 3 mm. The high thermal conductivity of flexible metal substrates enables high thermal saturation current density and high light output power of the flexible micro-LEDs, benefiting the potential applications in flexible high-brightness micro-displays and high-speed visible light communication. We have achieved ~40 MHz modulation bandwidth and 120 Mbit/s data transmission speed for a typical flexible micro-LED.

  3. Treatment of a vulvar Paget's disease by photodynamic therapy with a new light emitting fabric based device.

    Science.gov (United States)

    Vicentini, Claire; Carpentier, Olivier; Lecomte, Fabienne; Thecua, Elise; Mortier, Laurent; Mordon, Serge R

    2017-02-01

    The non-invasive vulvar Paget's disease is an intra-epidermal carcinoma with glandular characteristics. It appears like an erythematous plaque. The main symptoms are pruritus and pain. The standard treatment is surgical excision in depth. This treatment is complicated with a severe morbidity and photodynamic therapy can be an alternative choice. However, the pain experienced during the photodynamic treatment of vulvar lesion is intense and leads to a premature interruption of the treatment. The light emitting fabric is a part of a device under clinical evaluation for the treatment of actinic keratosis with photodynamic therapy. We report the observation of a vulvar Paget's disease treated by this device with a satisfactory result and an excellent tolerance. The patient has been diagnosed with non-invasive vulvar Paget's disease for 25 years. The disease recurred constantly despite several imiquimod applications, LASER treatments and conventional photodynamic therapy. These procedures were complicated with intense pain. To improve the tolerance, we performed three PDT sessions a month apart using a 16% methyl-aminolevulinate cream (Metvixia® Galderma, Lausanne, Switzerland) with the light emitting fabric at low irradiance (irradiance = 6 mW/cm(2) -fluence = 37 J/cm(2) ) with a satisfactory result and an excellent tolerance. There are no controlled trials evaluating the efficacy of photodynamic therapy in the treatment of vulvar Paget's disease. The treatment and follow-up protocols in the literature are heterogeneous. Pain is the most common side effect with greater intensity for perineal locations where photodynamic therapy is impractical outside of anesthesia or hypnosis. We report the case of a multirecidivant non-invasive vulvar Paget's disease treated with a satisfactory result and an excellent tolerance by the new light emitting fabric device. A specific study is required but the light emitting fabric could be indicated for the treatment of Paget

  4. Electrochemical Light-Emitting Gel

    Directory of Open Access Journals (Sweden)

    Nobuyuki Itoh

    2010-06-01

    Full Text Available Light-emitting gel, a gel state electroluminescence material, is reported. It is composed of a ruthenium complex as the emitter, an ionic liquid as the electrolyte, and oxide nanoparticles as the gelation filler. Emitted light was produced via electrogenerated chemiluminescence. The light-emitting gel operated at low voltage when an alternating current was passed through it, regardless of its structure, which is quite thick. The luminescence property of the gel is strongly affected by nanoparticle materials. TiO2 nanoparticles were a better gelation filler than silica or ZnO was, with respect to luminescence stability, thus indicating a catalytic effect. It is demonstrated that the light-emitting gel device, with quite a simple fabrication process, flashes with the application of voltage.

  5. Light-emitting Diodes

    Science.gov (United States)

    Opel, Daniel R.; Hagstrom, Erika; Pace, Aaron K.; Sisto, Krisanne; Hirano-Ali, Stefanie A.; Desai, Shraddha

    2015-01-01

    Background: In the early 1990s, the biological significance of light-emitting diodes was realized. Since this discovery, various light sources have been investigated for their cutaneous effects. Study design: A Medline search was performed on light-emitting diode lights and their therapeutic effects between 1996 and 2010. Additionally, an open-label, investigator-blinded study was performed using a yellow light-emitting diode device to treat acne, rosacea, photoaging, alopecia areata, and androgenetic alopecia. Results: The authors identified several case-based reports, small case series, and a few randomized controlled trials evaluating the use of four different wavelengths of light-emitting diodes. These devices were classified as red, blue, yellow, or infrared, and covered a wide range of clinical applications. The 21 patients the authors treated had mixed results regarding patient satisfaction and pre- and post-treatment evaluation of improvement in clinical appearance. Conclusion: Review of the literature revealed that differing wavelengths of light-emitting diode devices have many beneficial effects, including wound healing, acne treatment, sunburn prevention, phototherapy for facial rhytides, and skin rejuvenation. The authors’ clinical experience with a specific yellow light-emitting diode device was mixed, depending on the condition being treated, and was likely influenced by the device parameters. PMID:26155326

  6. Fabrication Methods and Luminescent Properties of ZnO Materials for Light-Emitting Diodes

    Directory of Open Access Journals (Sweden)

    Ching-Ting Lee

    2010-03-01

    Full Text Available Zinc oxide (ZnO is a potential candidate material for optoelectronic applications, especially for blue to ultraviolet light emitting devices, due to its fundamental advantages, such as direct wide band gap of 3.37 eV, large exciton binding energy of 60 meV, and high optical gain of 320 cm−1 at room temperature. Its luminescent properties have been intensively investigated for samples, in the form of bulk, thin film, or nanostructure, prepared by various methods and doped with different impurities. In this paper, we first review briefly the recent progress in this field. Then a comprehensive summary of the research carried out in our laboratory on ZnO preparation and its luminescent properties, will be presented, in which the involved samples include ZnO films and nanorods prepared with different methods and doped with n-type or p-type impurities. The results of ZnO based LEDs will also be discussed.

  7. Sequential printing by laser-induced forward transfer to fabricate a polymer light-emitting diode pixel.

    Science.gov (United States)

    Shaw-Stewart, James R H; Lippert, Thomas K; Nagel, Matthias; Nüesch, Frank A; Wokaun, Alexander

    2012-07-25

    Patterned deposition of polymer light-emitting diode (PLED) pixels is a challenge for electronic display applications. PLEDs have additional problems requiring solvent orthogonality of different materials in adjacent layers. We present the fabrication of a PLED pixel by the sequential deposition of two different layers with laser-induced forward transfer (LIFT), a "dry" deposition technique. This novel use of LIFT has been compared to "normal" LIFT, where all the layers are transferred in a single step, and a conventional PLED fabrication process. For the sequential LIFT, a 50-nm film of an alcohol-soluble polyfluorene (PFN) is transferred onto a receiver with a transparent anode, before an aluminum cathode is transferred on top. Both steps use a triazene polymer dynamic release layer and are performed in a medium vacuum (1 mbar) across a 15 μm gap. The rough morphologies of the single-layer PFN pixels and the PLED device characteristics have been investigated and compared to both bilayer Al/PFN pixels fabricated by normal LIFT and conventionally fabricated devices. The functionality of the sequential LIFT pixels (0.003 cd/A, up to 200 mA/cm(2), at 30-40 V) demonstrates the suitability of LIFT for sequential patterned printing of different thin-film layers.

  8. Luminance enhancement in quantum dot light-emitting diodes fabricated with Field’s metal as the cathode

    Science.gov (United States)

    Basilio, Carlos; Oliva, Jorge; Lopez-Luke, Tzarara; Pu, Ying-Chih; Zhang, Jin Z.; Rodriguez, C. E.; de la Rosa, E.

    2017-03-01

    This work reports the fabrication and characterization of blue–green quantum dot light-emitting diodes (QD-LEDs) by using core/shell/shell Cd1‑x Zn x Se/ZnSe/ZnS quantum dots. Poly [(9,9-bis(3‧-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9–dioctylfluorene)] (PFN) was introduced in order to enhance the electron injection and also acted as a protecting layer during the deposition of the cathode (a Field’s metal sheet) on the organic/inorganic active layers at low temperature (63 °C). This procedure permitted us to eliminate the process of thermal evaporation for the deposition of metallic cathodes, which is typically used in the fabrication of OLEDs. The performance of devices made with an aluminum cathode was compared with that of devices which employed Field’s metal (FM) as the cathode. We found that the luminance and efficiency of devices with FM was ~70% higher with respect to those that employed aluminum as the cathode and their consumption of current was similar up to 13 V. We also demonstrated that the simultaneous presence of 1,2-ethanedethiol (EDT) and PFN enhanced the luminance in our devices and improved the current injection in QD-LEDs. Hence, the architecture for QD-LEDs presented in this work could be useful for the fabrication of low-cost luminescent devices.

  9. Light-Emitting Pickles

    Science.gov (United States)

    Vollmer, M.; Mollmann, K-P.

    2015-01-01

    We present experiments giving new insights into the classical light-emitting pickle experiment. In particular, measurements of the spectra and temperatures, as well as high-speed recordings, reveal that light emission is connected to the polarity of the electrodes and the presence of hydrogen.

  10. Light-Emitting Pickles

    Science.gov (United States)

    Vollmer, M.; Mollmann, K-P.

    2015-01-01

    We present experiments giving new insights into the classical light-emitting pickle experiment. In particular, measurements of the spectra and temperatures, as well as high-speed recordings, reveal that light emission is connected to the polarity of the electrodes and the presence of hydrogen.

  11. Fabrication of Si/ZnS radial nanowire heterojunction arrays for white light emitting devices on Si substrates.

    Science.gov (United States)

    Katiyar, Ajit K; Sinha, Arun Kumar; Manna, Santanu; Ray, Samit K

    2014-09-10

    Well-separated Si/ZnS radial nanowire heterojunction-based light-emitting devices have been fabricated on large-area substrates by depositing n-ZnS film on p-type nanoporous Si nanowire templates. Vertically oriented porous Si nanowires on p-Si substrates have been grown by metal-assisted chemical etching catalyzed using Au nanoparticles. Isolated Si nanowires with needle-shaped arrays have been made by KOH treatment before ZnS deposition. Electrically driven efficient white light emission from radial heterojunction arrays has been achieved under a low forward bias condition. The observed white light emission is attributed to blue and green emission from the defect-related radiative transition of ZnS and Si/ZnS interface, respectively, while the red arises from the porous surface of the Si nanowire core. The observed white light emission from the Si/ZnS nanowire heterojunction could open up the new possibility to integrate Si-based optical sources on a large scale.

  12. Enhanced light extraction efficiency of chip-on board light-emitting diodes through micro-lens array fabricated by ion wind

    Science.gov (United States)

    Chu, Jingcao; Lei, Xiang; Wu, Jiading; Peng, Yang; Liu, Sheng; Yang, Qian; Zheng, Huai

    2017-03-01

    Low light extraction efficiency (LEE) is a key challenge of chip-on board (COB) packaging light-emitting diodes (LEDs). In this paper, a facile preparation of micro-lens array was proposed based on the ion wind patterning. The geometries and sizes of the micro-lens arrays were controlled through adjusting the voltage parameter of the ion wind generation. Consequently, the micro-lens array with the diameter of 180 μm and the gap distance of 15 μm has been fabricated. Benefitting from this micro-lens array, the LEE of COB packaging LEDs was enhanced by 9%. This facile fabrication of micro-lens array would be a promising method to improve the LEE of COB packaging LEDs.

  13. A flexible organic active matrix circuit fabricated using novel organic thin film transistors and organic light-emitting diodes

    KAUST Repository

    Gutiérrez-Heredia, Gerardo

    2010-10-04

    We present an active matrix circuit fabricated on plastic (polyethylene naphthalene, PEN) and glass substrates using organic thin film transistors and organic capacitors to control organic light-emitting diodes (OLEDs). The basic circuit is fabricated using two pentacene-based transistors and a capacitor using a novel aluminum oxide/parylene stack (Al2O3/ parylene) as the dielectric for both the transistor and the capacitor. We report that our circuit can deliver up to 15 μA to each OLED pixel. To achieve 200 cd m-2 of brightness a 10 μA current is needed; therefore, our approach can initially deliver 1.5× the required current to drive a single pixel. In contrast to parylene-only devices, the Al2O 3/parylene stack does not fail after stressing at a field of 1.7 MV cm-1 for >10 000 s, whereas \\'parylene only\\' devices show breakdown at approximately 1000 s. Details of the integration scheme are presented. © 2010 IOP Publishing Ltd.

  14. Fabrication of Photonic Crystal Structures on Flexible Organic Light-Emitting Diodes by Using Nano-Imprint and PDMS Mold

    Directory of Open Access Journals (Sweden)

    Ho Ting-Lin

    2016-01-01

    Full Text Available In this paper, nanoimprint lithography was used to create a photonic crystals structure film in organic light-emitting diode (OLED component, and then compare the efficiency of components whether with nanostructure or not. By using two different kinds of mold, such as silicon mold and PDMS mold, the nano structures in PMMA (molecular weight of 350K were fabricated. Nanostructures in period of 403.53nm with silicon mold and nano structures in period of 385.64nm with PDMS mold as photonic crystal films were fabricated and were integrated into OLED. In experimental results, the OLED without photonic crystal films (with packing behaves 193.3cd/m2 for luminous intensity, 3.481cd/A for lightening efficiency (ηL and 0.781 lm/W for lightening power (ηP where V is 14V and I is 5.5537mA; the OLED with photonic crystal films (with packing behaves 241.6cd/m2 for luminous intensity, 4.173cd/A for lightening efficiency (ηL and 0.936 lm/W for lightening power (ηP where voltage of 14V and current (I of 5.7891mA, which shows that the latter perform is well.

  15. A flexible organic active matrix circuit fabricated using novel organic thin film transistors and organic light-emitting diodes

    Science.gov (United States)

    Gutiérrez-Heredia, G.; González, L. A.; Alshareef, H. N.; Gnade, B. E.; Quevedo-López, M.

    2010-11-01

    We present an active matrix circuit fabricated on plastic (polyethylene naphthalene, PEN) and glass substrates using organic thin film transistors and organic capacitors to control organic light-emitting diodes (OLEDs). The basic circuit is fabricated using two pentacene-based transistors and a capacitor using a novel aluminum oxide/parylene stack (Al2O3/parylene) as the dielectric for both the transistor and the capacitor. We report that our circuit can deliver up to 15 µA to each OLED pixel. To achieve 200 cd m-2 of brightness a 10 µA current is needed; therefore, our approach can initially deliver 1.5× the required current to drive a single pixel. In contrast to parylene-only devices, the Al2O3/parylene stack does not fail after stressing at a field of 1.7 MV cm-1 for >10 000 s, whereas 'parylene only' devices show breakdown at approximately 1000 s. Details of the integration scheme are presented.

  16. Metal-assisted electroless fabrication of nanoporous p-GaN for increasing the light extraction efficiency of light emitting diodes

    Directory of Open Access Journals (Sweden)

    Ruijun Wang

    2012-03-01

    Full Text Available We report metal-assisted electroless fabrication of nanoporous p-GaN to improve the light extraction efficiency of GaN-based light emitting diodes (LEDs. Although it has long been believed that p-GaN cannot be etched at room temperature, in this study we find that Ag nanocrystals (NCs on the p-GaN surface enable effective etching of p-GaN in a mixture of HF and K2S2O8 under ultraviolet (UV irradiation. It is further shown that the roughened GaN/air interface enables strong scattering of photons emitted from the multiple quantum wells (MQWs. The light output power measurements indicate that the nanoporous LEDs obtained after 10 min etching show a 32.7% enhancement in light-output relative to the conventional LEDs at an injection current of 20 mA without significant increase of the operating voltage. In contrast, the samples etched for 20 min show performance degradation when compared with those etched for 10 min, this is attributed to the current crowding effect and increased surface recombination rate.

  17. Design and Fabrication of Functional Contact Lenses with Integrated Light Emitting and Photovoltaic Components

    Science.gov (United States)

    Lingley, Andrew

    This dissertation presents progress toward the realization of functional contact lenses. Two primary goals of the functional contact lens project are to create displays for augmented reality and to create sensors to measure biomolecules in tears. First, work on contact lens displays is described, detailing the steps and process optimization required to fabricate fully functional contact lenses and culminating in the wireless activation of a single pixel contact lens display in vivo on a rabbit under general anesthesia. Next, solar cells designed to conform to a sphere for use with contact lens biosensors are described. To measure analytes in the tear film using electrochemical methods, contact lenses would require embedded sensors, electronics, antennas or LEDs for communication, and power sources. Ideally, a contact lens biosensor would be autonomous, provide regular readings, and operate during normal daily activity, thus requiring power continuously. Photovoltaic structures could provide continuous power for autonomous contact lens systems that could store sensor readings and communicate data when occasionally queried.

  18. The AlGaAs light emitting particle detector

    CERN Document Server

    Pozela, J; Silenas, A; Juciene, V; Dapkus, L; Jasutis, V; Tamulaitis, G; Zukauskas, A; Bendorius, R A

    1999-01-01

    An AlGaAs light emitting particle detector was fabricated and investigated experimentally. Light emitting semiconductor Al sub x Ga sub 1 sub - sub x As layers with graded-gap energy band structure were grown, and luminescence spectra were investigated. A light emitting X-ray detector was also fabricated. (author)

  19. Light Emitting Diodes (LEDs)

    Science.gov (United States)

    1997-01-01

    A special lighting technology was developed for space-based commercial plant growth research on NASA's Space Shuttle. Surgeons have used this technology to treat brain cancer on Earth, in two successful operations. The treatment technique, called Photodynamic Therapy, requires the surgeon to use tiny, pinhead-size Light Emitting Diodes (LEDs) (a source that releases long wavelengths of light ) to activate light-sensitive, tumor-treating drugs. 'A young woman operated on in May 1999 has fully recovered with no complications and no evidence of the tumor coming back,' said Dr. Harry Whelan, a pediatric neurologist at the Medical Hospital of Wisconsin in Milwaukee. Laser light has been used for this type of surgery in the past, but the LED light illuminates through all nearby tissues, reaching parts of a tumor that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. It can be used for hours at a time while still remaining cool to the touch. The LED light source is compact, about the size of a briefcase, and can be purchased for a fraction of the cost of a laser. The LEDs, developed and managed by NASA's Marshall Space Flight Center, have been used on seven Space Shuttle flights inside the Microgravity Astroculture Facility. This technology has also been successfully used to further commercial research in crop growth.

  20. Fabrication of centimeter-scale light-emitting diode with improved performance based on graphene quantum dots

    Science.gov (United States)

    Xu, Chang; Yang, Siwei; Tian, Linfan; Guo, Tianqi; Ding, Guqiao; Zhao, Jianwei; Sun, Jing; Lu, Jian; Wang, Zhongyang

    2017-03-01

    The low solubility of graphene quantum dots in organic solvents limits their application in optoelectronic devices. We propose a bottom-up synthesis approach that yields graphene quantum dots that can be dissolved in organic solvents, and we apply this approach to construct new devices. Further, by using the newly designed structure described here, a centimeter-scale emitting area and a maximum external quantum efficiency of approximately 1.2% are achieved. The method we propose provides a feasible way to develop light-emitting diodes based on graphene quantum dots for practical application.

  1. Fabrication and electroluminescence properties of white organic light-emitting diode with a new yellow fluorescent dopant.

    Science.gov (United States)

    Lee, Sung Nam; Lee, Seok Jae; Kim, Young Kwan; Shin, Dong Myung

    2014-08-01

    A new yellow fluorescent material, (2Z)-3-[4,4"-bis(dimethylamino)-1,1':4',1"-terphenyl-2'-yl]-2-phenylacrylonitrile (BDAT-P), have been synthesized for use in organic light-emitting diodes. Opto-electronic properties of device with the structure of ITO (180 nm)/NPB (50 nm)/MADN:PFVtPh (SYB-41) 8% (17 nm)/CBP (5 nm)/CBP:Ir(pq)2acac 8% (3 nm)/CBP (5 nm)/MADN:BDAT-P 8% (3 nm)/CBP (5 nm)/MADN:SYB-41 8% (17 nm)/TPBi (40 nm)/Liq (2 nm)/Al (100 nm) was measured and revealed that BDAT-P was sufficiently applicable as a dopant of one of emitting layers in white light-emitting diodes. Maximum luminance of device was measured to be 26,950 cd/m2. Maximum luminous and quantum efficiency were observed to be 14.22 cd/A and 6.58%, respectively. The device emitted warm white light corresponding to Commission Internationale de l'Eclairage (CIExy) coordinates of (0.372, 0.424) at 11 V, (0.375,0.417) at 12 V, (0.372,0.409) at 13 V, (0.366, 0.401) at 14 V, and (0.360, 0.393) at 15 V, respectively.

  2. Warm-white light-emitting diode with high color rendering index fabricated by combining trichromatic InGaN emitter with single red phosphor.

    Science.gov (United States)

    Sheu, Jinn-Kong; Chen, Fu-Bang; Wang, Yen-Chin; Chang, Chih-Chiang; Huang, Shih-Hsien; Liu, Chun-Nan; Lee, Ming-Lun

    2015-04-06

    We present a trichromatic GaN-based light-emitting diode (LED) that emits near-ultraviolet (n-UV) blue and green peaks combined with red phosphor to generate white light with a low correlated color temperature (CCT) and high color rendering index (CRI). The LED structure, blue and green unipolar InGaN/GaN multiple quantum wells (MQWs) stacked with a top p-i-n structure containing an InGaN/GaN MQW emitting n-UV light, was grown epitaxially on a single substrate. The trichromatic LED chips feature a vertical conduction structure on a silicon substrate fabricated through wafer bonding and laser lift-off techniques. The blue and green InGaN/GaN MQWs were pumped with n-UV light to re-emit low-energy photons when the LEDs were electrically driven with a forward current. The emission spectrum included three peaks at approximately 405, 468, and 537 nm. Furthermore, the trichromatic LED chips were combined with red phosphor to generate white light with a CCT and CRI of approximately 2900 and 92, respectively.

  3. Fabrication and improvement of nanopillar InGaN/GaN light-emitting diodes using nanosphere lithography

    DEFF Research Database (Denmark)

    Fadil, Ahmed; Ou, Yiyu; Zhan, Teng

    2015-01-01

    Surface-patterning technologies have enabled the improvement of currently existinglight-emitting diodes (LEDs) and can be used to overcome the issue of low quantum efficiency ofgreen GaN-based LEDs. We have applied nanosphere lithography to fabricate nanopillars onInGaN∕GaN quantum-well LEDs...... that nanopillar LEDs can be significantly improved byapplying a combination of ion-damage curing techniques, including thermal and acidic treatment,and have analyzed their effects using x-ray photoelectron spectroscopy....

  4. Fabrication of high-brightness GaN-based light-emitting diodes via thermal nanoimprinting of ZnO-nanoparticle-dispersed resin

    Energy Technology Data Exchange (ETDEWEB)

    Byeon, Kyeong-Jae [Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109 (United States); Cho, Joong-Yeon; Jo, Han-Byeol [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Lee, Heon, E-mail: heonlee@korea.ac.kr [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

    2015-08-15

    Highlights: • A various high-refractive-index ZnO patterns were formed on LED using imprinting. • Mechanism of light extraction enhancement was demonstrated by simulation and EL. • Light output power of patterned LED was improved up 19.6% by light waveguide effect. - Abstract: We fabricated high-brightness GaN-based light-emitting diodes (LEDs) with highly refractive patterned structures by using a thermal nanoimprint lithography (NIL). A highly refractive ZnO-nanoparticle-dispersed resin (ZNDR) was used in NIL, and a submicron hole, a submicron high-aspect-ratio pillar, and microconvex arrays were fabricated on the indium tin oxide (ITO) top electrode of GaN-based LED devices. We analyzed the light extraction mechanism for each of the three types of patterns by using a finite element method simulation, and found that the high-aspect-ratio pillar had a great ability to improve light extraction owing to its waveguide effect and prominent scattering effect. As a result, the light output power, which was measured in an integrating sphere, of the LED device was enhanced by up to 19.6% when the high-aspect-ratio pillar array was formed on the top ITO electrode of the device. Further, the electrical properties of none of the patterned LED devices fabricated using ZNDR degraded in comparison to those of bare LED devices.

  5. Fabrication of silver nanowires and metal oxide composite transparent electrodes and their application in UV light-emitting diodes

    Science.gov (United States)

    Yan, Xingzhen; Ma, Jiangang; Xu, Haiyang; Wang, Chunliang; Liu, Yichun

    2016-08-01

    In this paper, we prepared the silver nanowires (AgNWs)/aluminum-doped zinc oxide (AZO) composite transparent conducting electrodes for n-ZnO/p-GaN heterojunction light emitting-diodes (LEDs) by drop casting AgNW networks and subsequent atomic layer deposition (ALD) of AZO at 150 °C. The contact resistances between AgNWs were dramatically reduced by pre-annealing in the vacuum chamber before the ALD of AZO. In this case, AZO works not only as the conformal passivation layer that protects AgNWs from oxidation, but also as the binding material that improves AgNWs adhesion to substrates. Due to the localized surface plasmons (LSPs) of the AgNWs resonant coupling with the ultraviolet (UV) light emission from the LEDs, a higher UV light extracting efficiency is achieved from LEDs with the AgNWs/AZO composite electrodes in comparison with the conventional AZO electrodes. Additionally, the antireflective nature of random AgNW networks in the composite electrodes caused a broad output light angular distribution, which could be of benefit to certain optoelectronic devices like LEDs and solar cells.

  6. Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography

    Science.gov (United States)

    Wu, Kui; Wei, Tongbo; Zheng, Haiyang; Lan, Ding; Wei, Xuecheng; Hu, Qiang; Lu, Hongxi; Wang, Junxi; Luo, Yi; Li, Jinmin

    2014-03-01

    A novel nanopattern technique of nanospherical-lens photolithography is introduced to fabricate the InGaN nanopyramid white (NPW) light-emitting diodes (LEDs) by selective area growth. Highly ordered NPW LED arrays are achieved after optimizing the growth conditions. It is found that the NPW LEDs vary from warm white light to cool with the increase in growth temperature. For the cool white NPW LEDs, the spectrum is similar to the conventional white LEDs obtained from the blue LEDs combined with yellow phosphors. The blue emission originates from the upper sidewalls of nanopyramids, and yellow light is mainly emitted from the lower ridges with respect to the base of nanopyramids. Furthermore, simulation shows that the light extraction efficiency of NPW LEDs is about 4 times higher compared with conventional ones, and the escape cone is as much as 85° due to their three-dimensional nanopyramid structures. These observations suggest that the proposed phosphor-free NPW LEDs may have great potential for highly efficient white lighting.

  7. Woven Light Emitting Display

    OpenAIRE

    Kašurina, I

    2013-01-01

    Electrotextiles represent a huge potential in creating a new generation of flexible textile platforms for electronic systems and smart garments. In this research of electrotextile fabrication weaving method was used. Fully or partly replacing traditional (non-conductive) textile yarns with conductive textile yarns, it is possible to get woven conductive textile material or fabric circuit. In the paper weaving method is considered for electro textile design and process of ...

  8. Fabrication of Metal-Deposited Indium Tin Oxides: Its Applications to 385 nm Light-Emitting Diodes.

    Science.gov (United States)

    Kim, Min Ju; Kim, Tae Geun

    2016-03-01

    We report performance improvements in near-ultraviolet (NUV) light-emitting diodes (LEDs) using various metal-doped indium tin oxide (ITO/metals). Metals with an orbital energy gap greater than that of an In atom (e.g., Ti, Ga, Ge, and Al) are deposited on ITO, and subsequent annealing is performed to improve optical transmittance of ITO due to effective bandgap increase via the linear combination of atomic orbitals, as well as electrical conductivity; thus, current spreading via metal-doping effect at the surface of ITO. As a result, the ITO/metals (annealed at 550 °C, 1 min) exhibit 90.5-94.7% transmittance at 385 nm and a specific contact resistance of 2.1-3.0 × 10(-3) Ω cm(2), whereas the reference ITOs exhibit 76.5-89.5% and 3.2-4.5 × 10(-3) Ω cm(2), respectively. Compared to NUV LEDs using conventional ITO (60 nm), the InGaN/AlGaInN NUV LED using ITO (110 nm)/metal (3 nm) on average exhibits a 70% increase in light output power at 100 mA and a 2% decrease in forward voltage at 20 mA, with more uniform and brighter emission images. We also identified the origin for the improvement by analyzing the surface of ITO/metals using X-ray photoelectron spectroscopy and Auger electron spectroscopy. This approach could offer a simple, effective way to enhance the overall efficiency of conventional NUV LEDs using ITO.

  9. Light Emitting Porous Silicon

    Science.gov (United States)

    1993-05-01

    ml - mm m lm m ~ m m ThO report Page 14 preparation method which has been originally described by Wohler [23] leads to a bright yellow substance with...Solid State Commun. 81, 307 (1992). [221 H. Kautsky, and H. Zocher, Z. Phys. 9,267 (1992). L TNO report Page 28 [231 F. Wohler , Lieb. Ann. 127, 275 (1863...Netherlands Fax + 31 70 328 09 61 Phone + 31 70 326 42 21 TNO- report copy no. e FEL-93eo047r Lh Emitting Porous Silicon sitho(s): DTICHMi.P.Th

  10. Light-emitting nanolattices with enhanced brightness

    Science.gov (United States)

    Ng, Ryan C.; Mandal, Rajib; Anthony, Rebecca J.; Greer, Julia R.

    2017-02-01

    Three-dimensional (3D) photonic crystals have potential in solid state lighting applications due to their advantages over conventional planar thin film devices. Periodicity in a photonic crystal structure enables engineering of the density of states to improve spontaneous light emission according to Fermi's golden rule. Unlike planar thin films, which suffer significantly from total internal reflection, a 3D architectured structure is distributed in space with many non-flat interfaces, which facilitates a substantial enhancement in light extraction. We demonstrate the fabrication of 3D nano-architectures with octahedron geometry that utilize luminescing silicon nanocrystals as active media with an aluminum cathode and indium tin oxide anode towards the realization of a 3D light emitting device. The developed fabrication procedure allows charge to pass through the nanolattice between two contacts for electroluminescence. These initial fabrication efforts suggest that 3D nano-architected devices are realizable and can reach greater efficiencies than planar devices.

  11. ORGANIC LIGHT EMITTING DIODE (OLED

    Directory of Open Access Journals (Sweden)

    Aririguzo Marvis Ijeaku

    2015-09-01

    Full Text Available An Organic Light Emitting Diode (OLED is a device composed of an organic layer that emits lights in response to an electrical current. Organic light emitting diodes have advanced tremendously over the past decades. The different manufacturing processes of the OLED itself to several advantages over flat panel displays made with LCD technology which includes its light weight and flexible plastic substrates, wider viewing angles, improved brightness, better power efficiency and quicker response time. However, its drawbacks include shorter life span, poor color balance, poor outdoor performance, susceptibility to water damage etc.The application of OLEDs in electronics is on the increase on daily basics from cameras to cell phones to OLED televisions, etc. Although OLEDs provides prospects for thinner, smarter, lighter and ultraflexible electronics displays, however, due to high cost of manufacturing, it is not yet widely used.

  12. Fabrication and transfer assembly of microscale, solid-state light emitting diodes and solar cells for transparent and flexible electronics applications

    Science.gov (United States)

    Brueckner, Eric P.

    Efficiency metrics for some solid-state electronic materials systems have progressed to the point where theoretical limits are being approached. Gallium nitride-based lightemitting diodes and silicon solar cells, for example, have achieved such extraordinarily high performance metrics that only incremental improvements upon them are expected in the next decade of intense research. This pseudo-plateau in performance development means concentrated effort can now be placed on strategic implementation of these materials into platforms that fill a growing demand for high-performance consumer products. Such products have traditionally relied upon large-scale materials, but possibilities now exist for manipulating micro-scale, wafer-based devices in ways that promote improvements in areas of electrical current spreading, light absorption and extraction, and thermal management. To this end, my research has focused on routes to fabricating and assembling solid-state light-emitting diodes and solar cells of indium gallium nitride and single-crystalline silicon, respectively, in configurations which optimize characteristics of their performance. Specifically, I have worked, in collaboration with others, to achieve a processing strategy that creates dense arrays of indium gallium nitride light-emitting diodes on a silicon wafer of (111) orientation and assemble them onto transparent and flexible substrates. This work produced novel form factors for solid-state lighting where small, light-emitting devices were spatially distributed and integrated with color-converting phosphors in ways that controllably tuned their chromaticity. We also demonstrated that incredible passive heat dissipation with these micro-scale elements stemming naturally from their small size and integration with metal films serving dually as an electrically interconnecting medium. The cell design and etching strategies used were then transferred to a single-crystalline silicon system where small, ribbon

  13. Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO3 ferroelectric film

    Science.gov (United States)

    Peng, Jing; Wu, Chuan-Ju; Sun, Tang-You; Zhao, Wen-Ning; Wu, Xiao-Feng; Liu, Wen; Wang, Shuang-Bao; Jie, Quan-Lin; Xu, Zhi-Mou

    2012-06-01

    BaTiO3 (BTO) ferroelectric thin films are prepared by the sol-gel method. The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode (LED) with amorphous BTO ferroelectric thin film are studied. The photoluminescence (PL) of the BTO ferroelectric film is attributed to the structure. The ferroelectric film which annealed at 673 K for 8 h has the better PL property. The peak width is about 30 nm from 580 nm to 610 nm, towards the yellow region. The mixed electroluminescence (EL) spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light. The Commission Internationale De L'Eclairage (CIE) coordinate of EL is (0.2139, 0.1627). EL wavelength and intensity depends on the composition, microstructure and thickness of the ferroelectric thin film. The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm. This means the amorphous ferroelectric thin films can output more blue-ray and emission lights. In addition, the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures (200 °C-400 °C). It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED. This provides a new way to study LEDs.

  14. Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO3 ferroelectric film

    Institute of Scientific and Technical Information of China (English)

    Peng Jing; Wu Chuan-Ju; Sun Tang-You; Zhao Wen-Ning; Wu Xiao-Feng; Liu Wen; Wang Shuang-Bao; Jie Quan-Lin; Xu Zhi-Mou

    2012-01-01

    BaTiO3 (BTO) ferroelectric thin films are prepared by the sol-gel method.The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode (LED) with amorphous BTO ferroelectric thin film are studied.The photoluminescence (PL) of the BTO ferroelectric film is attributed to the structure.The ferroelectric film which annealed at 673 K for 8 h has the better PL property.The peak width is about 30 nm from 580 nm to 610 nm,towards the yellow region.The mixed electroluminescence (EL) spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light.The Commission Internationale De L'Eclairage (CIE) coordinate of EL is (0.2139,0.1627).EL wavelength and intensity depends on the composition,microstructure and thickness of the ferroelectric thin film.The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm.This means the amorphous ferroelectric thin films can output more blue-ray and emission lights.In addition,the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures (200 ℃-400 ℃).It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED.This provides a new way to study LEDs.

  15. Effect of the solvent used for fabrication of perovskite films by solvent dropping on performance of perovskite light-emitting diodes.

    Science.gov (United States)

    Yu, Jae Choul; Kim, Dae Woo; Kim, Da Bin; Jung, Eui Dae; Lee, Ki-Suk; Lee, Sukbin; Nuzzo, Daniele Di; Kim, Ji-Seon; Song, Myoung Hoon

    2017-02-02

    Organic-inorganic hybrid perovskites have emerged as a next-generation candidate for light-emitting device applications due to their excellent optical and electrical properties with narrow band emission compared to organic emitters. The morphological control of perovskite films with full surface coverage and few defect sites is essential for achieving highly efficient perovskite light-emitting diodes (PeLEDs). Here, we obtain a highly uniform perovskite film with a remarkably reduced number of defect sites in a perovskite crystal using chlorobenzene dropping. This effort leads to the enhanced performance of PeLEDs with a CH3NH3PbBr3 film using chlorobenzene dropping with a maximum luminance of 14 460 cd m(-2) (at 3.8 V) and a maximum external quantum efficiency (EQE) of 0.71% (at 2.8 V). This research confirms that the role of the solvent in the solvent dropping method is to fabricate a dense and uniform perovskite film and to passivate the defect sites of the perovskite crystal films.

  16. Use of the Thermal Chemical Vapor Deposition to Fabricate Light-Emitting Diodes Based on ZnO Nanowire/p-GaN Heterojunction

    Directory of Open Access Journals (Sweden)

    Sheng-Po Chang

    2011-01-01

    Full Text Available The fabrication and characteristics of grown ZnO nanowire/p-GaN heterojunction light-emitting diodes are reported. Vertically aligned ZnO nanowire arrays were grown on a p-GaN substrate by thermal chemical vapor deposition in quartz tube. The rectifying current-voltage characteristics indicate that a p-n junction was formed with a heterostructure of n-ZnO nanowire/p-GaN. The room temperature electroluminescent emission peak at 425 nm was attributed to the band offset at the interface between the n-ZnO nanowire and p-GaN and to defect-related emission from GaN; it was also found that the there exist the yellow band in the hetrojunction. It would be attributed to the deep defect level in the heterojunction.

  17. The optimisation of the laser-induced forward transfer process for fabrication of polyfluorene-based organic light-emitting diode pixels

    Energy Technology Data Exchange (ETDEWEB)

    Shaw-Stewart, James, E-mail: james.shaw-stewart@ed.ac.uk [Materials Group, General Energies Department, Paul Scherrer Institut, CH-5232 Villigen-PSI (Switzerland); Laboratory for Functional Polymers, Empa Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf (Switzerland); Mattle, Thomas [Materials Group, General Energies Department, Paul Scherrer Institut, CH-5232 Villigen-PSI (Switzerland); Lippert, Thomas, E-mail: thomas.lippert@psi.ch [Materials Group, General Energies Department, Paul Scherrer Institut, CH-5232 Villigen-PSI (Switzerland); Nagel, Matthias [Laboratory for Functional Polymers, Empa Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf (Switzerland); Nüesch, Frank, E-mail: frank.nueesch@empa.ch [Laboratory for Functional Polymers, Empa Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf (Switzerland); Section de science et génie des matériaux, EPFL, CH-1015 Lausanne (Switzerland); Wokaun, Alexander [Materials Group, General Energies Department, Paul Scherrer Institut, CH-5232 Villigen-PSI (Switzerland)

    2013-08-01

    Laser-induced forward transfer (LIFT) has already been used to fabricate various types of organic light-emitting diodes (OLEDs), and the process itself has been optimised and refined considerably since OLED pixels were first demonstrated. In particular, a dynamic release layer (DRL) of triazene polymer has been used, the environmental pressure has been reduced down to a medium vacuum, and the donor receiver gap has been controlled with the use of spacers. Insight into the LIFT process's effect upon OLED pixel performance is presented here, obtained through optimisation of three-colour polyfluorene-based OLEDs. A marked dependence of the pixel morphology quality on the cathode metal is observed, and the laser transfer fluence dependence is also analysed. The pixel device performances are compared to conventionally fabricated devices, and cathode effects have been looked at in detail. The silver cathode pixels show more heterogeneous pixel morphologies, and a correspondingly poorer efficiency characteristics. The aluminium cathode pixels have greater green electroluminescent emission than both the silver cathode pixels and the conventionally fabricated aluminium devices, and the green emission has a fluence dependence for silver cathode pixels.

  18. Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes

    Directory of Open Access Journals (Sweden)

    Hsu-Hung Hsueh

    2014-01-01

    Full Text Available InGaN light-emitting diodes (LEDs were fabricated on cone-shaped patterned sapphire substrates (PSSs by using low-pressure metalorganic chemical vapor deposition. To enhance the crystal quality of the GaN epilayer and the optoelectronic performance of the LED device, the top-tip cone shapes of the PSSs were further modified using wet etching. Through the wet etching treatment, some dry-etched induced damage on the substrate surface formed in the PSS fabrication process can be removed to achieve a high epilayer quality. In comparison to the LEDs prepared on the conventional sapphire substrate (CSS and cone-shaped PSS without wet etching, the LED grown on the cone-shaped PSS by performing wet etching for 3 min exhibited 55% and 10% improvements in the light output power (at 350 mA, respectively. This implies that the modification of cone-shaped PSSs possesses high potential for LED applications.

  19. Fabrication of conducting-filament-embedded indium tin oxide electrodes: application to lateral-type gallium nitride light-emitting diodes.

    Science.gov (United States)

    Kim, Hee-Dong; Kim, Kyeong Heon; Kim, Su Jin; Kim, Tae Geun

    2015-11-02

    A novel conducting filament (CF)-embedded indium tin oxide (ITO) film is fabricated using an electrical breakdown method. To assess the performance of this layer as an ohmic contact, it is applied to GaN (gallium nitride) light-emitting diodes (LEDs) as a p-type electrode for comparison with typical GaN LEDs using metallic ITO. The operating voltage and output power of the LED with the CF embedded ITO are 3.93 V and 8.49 mW, respectively, at an injection current of 100 mA. This is comparable to the operating voltage and output power of the conventionally fabricated LEDs using metallic ITO (3.93 V and 8.43 mW). Moreover, the CF-ITO LED displays uniform and bright light emission indicating excellent current injection and spreading. These results suggest that the proposed method of forming ohmic contacts is at least as effective as the conventional method.

  20. Fabrication of Light Extraction Efficiency of Organic Light-Emitting Diodes with 3D Aspherical Microlens by Using Dry Etching Process

    Directory of Open Access Journals (Sweden)

    Y. C. Chen

    2013-01-01

    Full Text Available organic light-emitting diode (OLED can enable a greater artificial contrast ratio and viewing angle compared to liquid crystal display (LCD because OLED pixels directly emit light. There is a shortcoming that the internal quantum efficiency can reach values close to 100%, but about 80% light disperses because of the difference among the refractive indices of the substrate, anode, indium tin oxide (ITO film, and air. In this paper, three dimensions aspherical microlens arrays (3D A-MLAs with substrate modifications are developed to simulate the optical luminous field by using FRED software. This study modified parameters of 3D A-MLAs such as the diameter, fill-factor, aspect ratio, dry etching parameters, and electroforming rates of microlens to improve the extraction efficiency of the OLED. In dry etching, not only the aspect ratio with better extraction rate can be obtained by reactive ion etching (RIE dry etching, but also an undercutting phenomenon can be avoided. The dimensions of 3D A-MLAs can be accurately controlled in the electroforming process used to make a nickel-cobalt (Ni-Co metal mold to achieve the designed dimensions. According to the measured results, the average luminance efficacy of the OLEDs with 3D A-MLAs can be enhanced.

  1. Emission Spectral Control of a Silicon Light Emitting Diode Fabricated by Dressed-Photon-Phonon Assisted Annealing Using a Short Pulse Pair

    Directory of Open Access Journals (Sweden)

    Tadashi Kawazoe

    2014-01-01

    Full Text Available We fabricated a high-efficiency infrared light emitting diode (LED via dressed-photon-phonon (DPP assisted annealing of a p-n homojunctioned bulk Si crystal. The center wavelength in the electroluminescence (EL spectrum of this LED was determined by the wavelength of a CW laser used in the DPP-assisted annealing. We have proposed a novel method of controlling the EL spectral shape by additionally using a pulsed light source in order to control the number of phonons for the DPP-assisted annealing. In this method, the Si crystal is irradiated with a pair of pulses having an arrival time difference between them. The number of coherent phonons created is increased (reduced by tuning (detuning this time difference. A Si-LED was subjected to DPP-assisted annealing using a 1.3 μm (hν=0.94 eV CW laser and a mode-locked pulsed laser with a pulse width of 17 fs. When the number of phonons was increased, the EL emission spectrum broadened toward the high-energy side by 200 meV or more. The broadening towards the low-energy side was reduced to 120 meV.

  2. Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates

    Institute of Scientific and Technical Information of China (English)

    陈龙; 裴嘉鼎; 史达特; 李成; 张建明; 俞文杰; 狄增峰; 王曦

    2015-01-01

    Semi-polar (1−101) InGaN/GaN light-emitting diodes were prepared on standard electronic-grade Si (100) substrates. Micro-stripes of GaN and InGaN/GaN quantum wells on semi-polar facets were grown on intersecting{111}planes of microscale V-grooved Si in metal–organic vapor phase epitaxy, covering over 50%of the wafer surface area. In-situ optical reflectivity and curvature measurements demonstrate that the effect of the thermal expansion coefficient mismatch was greatly reduced. A cross-sectional analysis reveals low threading dislocation density on the top of most surfaces. On such prepared (1−101) GaN, an InGaN/GaN LED was fabricated. Electroluminescence over 5 mA to 60 mA is found with a much lower blue-shift than that on the c-plane device. Such structures therefore could allow higher efficiency light emitters with a weak quantum confined Stark effect throughout the visible spectrum.

  3. Fabrication and characterization of p-ZnO:(P,N)/n-ZnO:Al homojunction ultra-violet (UV) light emitting diodes (Presentation Recording)

    Science.gov (United States)

    Rafiudeen, Amiruddin; Reddy, T. Srinivasa; Cheemadan, Shaheer; Kumar, M. C. Santhosh

    2015-10-01

    ZnO possess distinctive characteristics such as low cost, wide band gap (3.36 eV) and large exciton binding energy (60meV). As the band gap lies in ultra violet (UV) region, ZnO is considered as a novel material for the fabrication of ultra violet light emitting diodes (UV-LEDs). However, ZnO being intrinsic n-type semiconductor the key challenge lies in realization of stable and reproducible p-type ZnO. In the present research dual acceptor group-V elements such as P and N are simultaneously doped in ZnO films to obtain the p-type characteristics. The deposition is made by programmable spray pyrolysis technique upon glass substrates at 697K. The optimum doping concentration of P and N were found to be 0.75 at% which exhibits hole concentration of 4.48 x 10^18 cm-3 and resistivity value of 9.6 Ω.cm. The deposited p-ZnO were found to be stable for a period over six months. Highly conducting n-type ZnO films is made by doping aluminum (3 at%) which exhibits higher electron concentration of 1.52 x 10^19 cm-3 with lower electrical resistivity of 3.51 x 10-2 Ω.cm. The structural, morphological, optical and electrical properties of the deposited n-ZnO and p-ZnO thin films are investigated. An efficient p-n homojunction has been fabricated using the optimum p-ZnO:(P,N) and n-ZnO:Al layers. The current-voltage (I-V) characteristics show typical rectifying characteristics of p-n junction with a low turn on voltage. Electroluminescence (EL) studies reveals the fabricated p-n homojunction diodes exhibits strong emission features in ultra-violet (UV) region around 378 nm.

  4. Light Emitting Transistors of Organic Single Crystals

    Science.gov (United States)

    Iwasa, Yoshihiro

    2009-03-01

    Organic light emitting transistors (OLETs) are attracting considerable interest as a novel function of organic field effect transistors (OFETs). Besides a smallest integration of light source and current switching devices, OLETs offer a new opportunity in the fundamental research on organic light emitting devices. The OLET device structure allows us to use organic single crystals, in contrast to the organic light emitting diodes (OLEDs), the research of which have been conducted predominantly on polycrystalline or amorphous thin films. In the case of OFETs, use of single crystals have produced a significant amount of benefits in the studies of pursuit for the highest performance limit of FETs, intrinsic transport mechanism in organic semiconductors, and application of the single crystal transistors. The study on OLETs have been made predominantly on polycrystalline films or multicomponent heterojunctions, and single crystal study is still limited to tetracene [1] and rubrene [2], which are materials with relatively high mobility, but with low photoluminescence efficiency. In this paper, we report fabrication of single crystal OLETs of several kinds of highly luminescent molecules, emitting colorful light, ranging from blue to red. Our strategy is single crystallization of monomeric or oligomeric molecules, which are known to have a very high photoluminescence efficiency. Here we report the result on single crystal LETs of rubrene (red), 4,4'-bis(diphenylvinylenyl)-anthracene (green), 1,4-bis(5-phenylthiophene-2-yl)benzene (AC5) (green), and 1,3,6,8-tetraphenylpyrene (TPPy) (blue), all of which displayed ambipolar transport as well as peculiar movement of voltage controlled movement of recombination zone, not only from the surface of the crystal but also from the edges of the crystals, indicting light confinement inside the crystal. Realization of ambipolar OLET with variety of single crystals indicates that the fabrication method is quite versatile to various light

  5. High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate

    KAUST Repository

    Muhammed, Mufasila

    2017-09-11

    We demonstrate a state-of-the-art high-efficiency GaN-based vertical light-emitting diode (VLED) grown on a transparent and conductive (-201)-oriented (β-Ga2O3) substrate, obtained using a straightforward growth process that does not require a high cost lift-off technique or complex fabrication process. The high-resolution scanning transmission electron microscopy (STEM) images confirm that we produced high quality upper layers, including a multi-quantum well (MQW) grown on the masked β-Ga2O3 substrate. STEM imaging also shows a well-defined MQW without InN diffusion into the barrier. Electroluminescence (EL) measurements at room temperature indicate that we achieved a very high internal quantum efficiency (IQE) of 78%; at lower temperatures, IQE reaches ~ 86%. The photoluminescence (PL) and time-resolved PL analysis indicate that, at a high carrier injection density, the emission is dominated by radiative recombination with a negligible Auger effect; no quantum-confined Stark effect is observed. At low temperatures, no efficiency droop is observed at a high carrier injection density, indicating the superior VLED structure obtained without lift-off processing, which is cost-effective for large-scale devices.

  6. Fabrication and characterization of WO3/Ag/WO3 multilayer transparent anode with solution-processed WO3 for polymer light-emitting diodes.

    Science.gov (United States)

    Jeon, Kangmin; Youn, Hongseok; Kim, Seongbeom; Shin, Seongbeom; Yang, Minyang

    2012-05-15

    The dielectric/metal/dielectric multilayer is suitable for a transparent electrode because of its high-optical and high-electrical properties; however, it is fabricated by an expensive and inefficient multistep vacuum process. We present a WO3/Ag/WO3 (WAW) multilayer transparent anode with solution-processed WO3 for polymer light-emitting diodes (PLEDs). This WAW multilayer not only has high transmittance and low resistance but also can be easily and rapidly fabricated. We devised a novel method to deposit a thin WO3 layer by a solution process in an air environment. A tungstic acid solution was prepared from an aqueous solution of Na2WO4 and then converted to WO3 nanoparticles (NPs) by a thermal treatment. Thin WO3 NP layers form WAW multilayer with a thermal-evaporated Ag layer, and they improve the transmittance of the WAW multilayer because of its high transmittance and refractive index. Moreover, the surface of the WO3 layer is homogeneous and flat with low roughness because of the WO3 NP generation from the tungstic acid solution without aggregation. We performed optical simulation and experiments, and the optimized WAW multilayer had a high transmittance of 85% with a sheet resistance of 4 Ω/sq. Finally, PLEDs based on the WAW multilayer anode achieved a maximum luminance of 35,550 cd/m2 at 8 V, and this result implies that the solution-processed WAW multilayer is appropriate for use as a transparent anode in PLEDs.

  7. Atomically thin quantum light-emitting diodes

    Science.gov (United States)

    Palacios-Berraquero, Carmen; Barbone, Matteo; Kara, Dhiren M.; Chen, Xiaolong; Goykhman, Ilya; Yoon, Duhee; Ott, Anna K.; Beitner, Jan; Watanabe, Kenji; Taniguchi, Takashi; Ferrari, Andrea C.; Atatüre, Mete

    2016-09-01

    Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide. To achieve this, we fabricate a light-emitting diode structure comprising single-layer graphene, thin hexagonal boron nitride and transition metal dichalcogenide mono- and bi-layers. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission. These results present the transition metal dichalcogenide family as a platform for hybrid, broadband, atomically precise quantum photonics devices.

  8. Electrically and Optically Readable Light Emitting Memories

    Science.gov (United States)

    Chang, Che-Wei; Tan, Wei-Chun; Lu, Meng-Lin; Pan, Tai-Chun; Yang, Ying-Jay; Chen, Yang-Fang

    2014-06-01

    Electrochemical metallization memories based on redox-induced resistance switching have been considered as the next-generation electronic storage devices. However, the electronic signals suffer from the interconnect delay and the limited reading speed, which are the major obstacles for memory performance. To solve this problem, here we demonstrate the first attempt of light-emitting memory (LEM) that uses SiO2 as the resistive switching material in tandem with graphene-insulator-semiconductor (GIS) light-emitting diode (LED). By utilizing the excellent properties of graphene, such as high conductivity, high robustness and high transparency, our proposed LEM enables data communication via electronic and optical signals simultaneously. Both the bistable light-emission state and the resistance switching properties can be attributed to the conducting filament mechanism. Moreover, on the analysis of current-voltage characteristics, we further confirm that the electroluminescence signal originates from the carrier tunneling, which is quite different from the standard p-n junction model. We stress here that the newly developed LEM device possesses a simple structure with mature fabrication processes, which integrates advantages of all composed materials and can be extended to many other material systems. It should be able to attract academic interest as well as stimulate industrial application.

  9. Light-Emitting Devices with Conjugated Polymers

    Directory of Open Access Journals (Sweden)

    Xian-Yu Deng

    2011-03-01

    Full Text Available This article introduces a previous study and tremendous progress in basic theoretical modeling, material developments and device engineering for polymer light-emitting devices (PLEDs.

  10. Recent Progress toward white organic light emitting diodes

    Institute of Scientific and Technical Information of China (English)

    Tao Yu-Tai

    2004-01-01

    An efficient and stable white organic light emitting diode (WOLED) is highly desirable in potential applications such as lighting, background light source, and full color display.A series of highly fluorescent dyes based on a dipyrazolopyridine skeleton,1,7-diphenyl-l,7-dihydrodipyrazolo[3,4-b,4′,3′-e]pyridine, were synthesized and evaluated as emitting as well as charge-transporting material in the fabrication of electroluminescent devices.Several of the blue derivatives are found to be useful as the source of blue emission in fabricating bright white-emitting devices. The choice of dopants, cathode materials, electron-transporting materials as well as the device configurations greatly affect the emission profile, efficiencies, as well as the device lifetime. The latest progress in achieving a more efficient, color stable, durable white light device will be discussed.

  11. ITO-free organic light-emitting diodes with MoO{sub 3}/Al/MoO{sub 3} as semitransparent anode fabricated using thermal deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Hsin-Wei; Huang, Ching-Wen [Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Kao, Po-Ching [Department of Electrophysics, National Chiayi University, Chiayi 60004, Taiwan (China); Chu, Sheng-Yuan, E-mail: chusy@mail.ncku.edu.tw [Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China)

    2015-08-30

    Highlights: • In this paper, the structure of the proposed devices is substrate (glass; polyethersulfone (PES))/anode (MoO{sub 3}/Al/MoO{sub 3}; MoO{sub 3}/Al)/α-naphthylphenylbiphenyl diamine (NPB) (40 nm)/tris (8-hydroxyquinoline) aluminum (Alq3) (60 nm)/LiF (1 nm)/Al (150 nm). • The optical transmittance of the metal layer was enhanced by depositing metal oxidation (MoO{sub 3}) and metal (Al) layers. • The optimized films show the typical sheet resistance of 7 Ω/sq and a high transmittance of 70% at 550 nm. • The indium-tin-oxide (ITO)-free OLEDs with the fabricated composite anodes on a glass substrate exhibited the high luminance and current efficiency of 21,750 cd/m{sup 2} and 3.18 cd/A, respectively. • The bending effects on PES substrate by depositing metal oxidation (MoO{sub 3}) and metal (Al) layers were also investigated. • MoO{sub 3} covering the Al layer modifies the surface of the electrode and enhances the durability. The surface roughness of the bi-layer films was higher than that of the tri-layer films. Therefore, OLEDs with OMO anode outperform those with bi-layer films anode. - Abstract: In this paper, semitransparent electrodes with the structure substrate/MoO{sub 3}/Al/MoO{sub 3} (OMO) were fabricated via the thermal deposition method for use as the anode in organic light-emitting diodes (OLEDs). The optical transmittance of the metal layer was enhanced by depositing metal oxidation (MoO{sub 3}) and metal (Al) layers. The optimal thickness of the Al thin films was determined to be 15 nm for high optical transmittance and good electrical conductivity. The optimized films show the typical sheet resistance of 7 Ω/sq and a high transmittance of 70% at 550 nm. The indium-tin-oxide (ITO)-free OLEDs with the fabricated composite anodes on a glass substrate exhibited the high luminance and current efficiency of 21,750 cd/m{sup 2} and 3.18 cd/A, respectively. In addition, bending effects on the polyethersulfone (PES) substrate/MoO{sub 3

  12. Light emitting device having peripheral emissive region

    Science.gov (United States)

    Forrest, Stephen R

    2013-05-28

    Light emitting devices are provided that include one or more OLEDs disposed only on a peripheral region of the substrate. An OLED may be disposed only on a peripheral region of a substantially transparent substrate and configured to emit light into the substrate. Another surface of the substrate may be roughened or include other features to outcouple light from the substrate. The edges of the substrate may be beveled and/or reflective. The area of the OLED(s) may be relatively small compared to the substrate surface area through which light is emitted from the device. One or more OLEDs also or alternatively may be disposed on an edge of the substrate about perpendicular to the surface of the substrate through which light is emitted, such that they emit light into the substrate. A mode expanding region may be included between each such OLED and the substrate.

  13. Perovskite Materials for Light-Emitting Diodes and Lasers.

    Science.gov (United States)

    Veldhuis, Sjoerd A; Boix, Pablo P; Yantara, Natalia; Li, Mingjie; Sum, Tze Chien; Mathews, Nripan; Mhaisalkar, Subodh G

    2016-08-01

    Organic-inorganic hybrid perovskites have cemented their position as an exceptional class of optoelectronic materials thanks to record photovoltaic efficiencies of 22.1%, as well as promising demonstrations of light-emitting diodes, lasers, and light-emitting transistors. Perovskite materials with photoluminescence quantum yields close to 100% and perovskite light-emitting diodes with external quantum efficiencies of 8% and current efficiencies of 43 cd A(-1) have been achieved. Although perovskite light-emitting devices are yet to become industrially relevant, in merely two years these devices have achieved the brightness and efficiencies that organic light-emitting diodes accomplished in two decades. Further advances will rely decisively on the multitude of compositional, structural variants that enable the formation of lower-dimensionality layered and three-dimensional perovskites, nanostructures, charge-transport materials, and device processing with architectural innovations. Here, the rapid advancements in perovskite light-emitting devices and lasers are reviewed. The key challenges in materials development, device fabrication, operational stability are addressed, and an outlook is presented that will address market viability of perovskite light-emitting devices.

  14. Synthesis, Properties, and Light-Emitting Electrochemical Cell (LEEC) Device Fabrication of Cationic Ir(III) Complexes Bearing Electron-Withdrawing Groups on the Cyclometallating Ligands.

    Science.gov (United States)

    Pal, Amlan K; Cordes, David B; Slawin, Alexandra M Z; Momblona, Cristina; Ortı, Enrique; Samuel, Ifor D W; Bolink, Henk J; Zysman-Colman, Eli

    2016-10-17

    quasireversible nature of the oxidation and reduction waves, fabrication of light-emitting electrochemical cells (LEECs) using these complexes as emitters was possible with the LEECs showing moderate efficiencies.

  15. Light-emitting diodes for analytical chemistry.

    Science.gov (United States)

    Macka, Mirek; Piasecki, Tomasz; Dasgupta, Purnendu K

    2014-01-01

    Light-emitting diodes (LEDs) are playing increasingly important roles in analytical chemistry, from the final analysis stage to photoreactors for analyte conversion to actual fabrication of and incorporation in microdevices for analytical use. The extremely fast turn-on/off rates of LEDs have made possible simple approaches to fluorescence lifetime measurement. Although they are increasingly being used as detectors, their wavelength selectivity as detectors has rarely been exploited. From their first proposed use for absorbance measurement in 1970, LEDs have been used in analytical chemistry in too many ways to make a comprehensive review possible. Hence, we critically review here the more recent literature on their use in optical detection and measurement systems. Cloudy as our crystal ball may be, we express our views on the future applications of LEDs in analytical chemistry: The horizon will certainly become wider as LEDs in the deep UV with sufficient intensity become available.

  16. White and Red Organic Light Emitting Materials

    Institute of Scientific and Technical Information of China (English)

    CHOW Tahsin J.; CHIU Ching-Wen; TSAI Mu-Lin

    2004-01-01

    Derivatives of 2,3-(1,4-dialkoxyaceno)norbornadiene underwent ring-opening metathesis polymerization (ROMP) upon the catalysis of a ruthenium complex to afford the corresponding polymers. The polymeric materials containing anthracene chromophores emit white electro-luminescence, which can be fabricated into light-emitting diodes (LED). The broad emission band is composed of a blue emission from anthracene and a red emission from aggregates. A single layer device, ITO/polymer/Ca/Al, can be turned on at 7V and exhibits maximum intensity 427 cd/m2 at 15 V. A double layer device, ITO/polymer/TPBI/Mg:Ag (TPBI = (2,2′,2"-(1,3,5-benzenetriyl)-tris(1-phenyl-1H-benzimidazole)) displayed blue light with turn-on voltage 6 V and maximal intensity 930 cd/m2 at 15 V.Derivatives of bisindolylmaleimide were found to form amorphous solid films which exhibit intensive red luminescence. The property of forming glasses can be ascribed to the nonplanar geometry of these molecules. LED devices were fabricated by a layer of pure dye sandwiched between two charge transporting films. The yellow emission spectrum of the devices utilizing Alq (tris(8-hydoxyquinolinato)aluminum) contains a green component from Alq. Pure red emissions can be achieved by replacing Alq with TPBI. Typical devices can be turned on at ~3 V with maximal intensity 2000 cd/m2. White color devices are under current investigation, in which the green Alq layer is replaced by its blue derivative (bis(2-methyl-8-hydoxyquinolinato)(phenolato)aluminum).

  17. Organic light emitting diode with light extracting electrode

    Energy Technology Data Exchange (ETDEWEB)

    Bhandari, Abhinav; Buhay, Harry

    2017-04-18

    An organic light emitting diode (10) includes a substrate (20), a first electrode (12), an emissive active stack (14), and a second electrode (18). At least one of the first and second electrodes (12, 18) is a light extracting electrode (26) having a metallic layer (28). The metallic layer (28) includes light scattering features (29) on and/or in the metallic layer (28). The light extracting features (29) increase light extraction from the organic light emitting diode (10).

  18. Phosphorescent Nanocluster Light-Emitting Diodes.

    Science.gov (United States)

    Kuttipillai, Padmanaban S; Zhao, Yimu; Traverse, Christopher J; Staples, Richard J; Levine, Benjamin G; Lunt, Richard R

    2016-01-13

    Devices utilizing an entirely new class of earth abundant, inexpensive phosphorescent emitters based on metal-halide nanoclusters are reported. Light-emitting diodes with tunable performance are demonstrated by varying cation substitution to these nanoclusters. Theoretical calculations provide insight about the nature of the phosphorescent emitting states, which involves a strong pseudo-Jahn-Teller distortion.

  19. Hybrid Light-Emitting Diode Enhanced With Emissive Nanocrystals

    DEFF Research Database (Denmark)

    Kopylov, Oleksii

    This thesis investigates a new type of white light emitting hybrid diode, composed of a light emitting GaN/InGaN LED and a layer of semiconductor nanocrystals for color conversion. Unlike standard white LEDs, the device is configured to achieve high color conversion efficiency via non...... of the hybrid diode fabrication including process techniques for GaN LED and incorporation of the nanocrystals are presented with the emphasis on the differences with standard LED processing. Results and analysis of optical and electrical characterization including photoluminescence (PL), micro-PL, time...

  20. Theory of piezo-phototronics for light-emitting diodes.

    Science.gov (United States)

    Zhang, Yan; Wang, Zhong Lin

    2012-09-04

    Devices fabricated by using the inner-crystal piezopotential as a "gate" voltage to tune/control the carrier generation, transport, and recombination processes at the vicinity of a p-n junction are named piezo-phototronics. Here, the theory of the photon emission and carrier transport behavior in piezo-phototronic devices is investigated as a p-n junction light-emitting diode. Numerical calculations are given for predicting the photon emission and current-voltage characteristics of a general piezo-phototronic light-emitting diode.

  1. Improving Electron Mobility of Tetraphenylethene-Based AIEgens to Fabricate Nondoped Organic Light-Emitting Diodes with Remarkably High Luminance and Efficiency.

    Science.gov (United States)

    Lin, Gengwei; Peng, Huiren; Chen, Long; Nie, Han; Luo, Wenwen; Li, Yinghao; Chen, Shuming; Hu, Rongrong; Qin, Anjun; Zhao, Zujin; Tang, Ben Zhong

    2016-07-01

    Robust light-emitting materials with strong solid-state fluorescence as well as fast and balanced carrier transporting ability are crucial to achieve high-performance organic light-emitting diodes (OLEDs). In this contribution, two linear tetraphenylethene (TPE) derivatives (TPE-TPAPBI and TPE-DPBI) that are functionalized with hole-transporting triphenylamine and/or electron-transporting 1,2-diphenyl-1H-benzimidazole groups are synthesized and fully characterized. Both TPE-TPAPBI and TPE-DPBI have aggregation-induced emission attributes and excellent photoluminescence quantum yields approaching 100% in vacuum deposited films. They also possess good thermal property, giving high decomposition temperatures (480 and 483 °C) and glass-transition temperatures (141 and 157 °C). TPE-TPAPBI and TPE-DPBI present high electron mobilities of 1.80 × 10(-5) and 1.30 × 10(-4) cm(2) V (-1) s(-1), respectively, at an electric field of 3.6 × 10(5) V cm(-1), which are comparable or even superior to that of 1,3,5-tri(1-phenylbenzimidazol-2-yl)benzene. The nondoped OLED device employing TPE-TPAPBI as active layer performs outstandingly, affording ultrahigh luminance of 125 300 cd m(-2), and excellent maximum external quantum, power and current efficiencies of 5.8%, 14.6 lm W(-1), and 16.8 cd A(-1), respectively, with very small roll-offs, demonstrating that TPE-TPAPBI is a highly promising luminescent material for nondoped OLEDs.

  2. Fabrication, photoluminescence, and potential application in white light emitting diode of Dy3+-Tm3+ doped transparent glass ceramics containing GdSr2F7 nanocrystals

    Science.gov (United States)

    Wang, X. F.; Yan, X. H.; Bu, Y. Y.; Zhen, J.; Xuan, Y.

    2013-08-01

    Dy3+-Tm3+ doped transparent glass ceramics containing GdSr2F7 nanocrystals were fabricated successfully by a melt-quenching method and subsequent heating. X-ray diffraction and transmission electron microscopy analyses show that tetragonal GdSr2F7 nanocrystals are homogeneously precipitated among the borosilicate glass matrix. If excited with 354 nm UV light, the photoluminescence spectrum of Dy3+ single-doped transparent glass ceramics shows white-light emission. With doping of Tm3+, the overall emission color of Tm3+-Dy3+ co-doped transparent glass ceramics can be tuned from white to blue through energy transfer between Dy3+ and Tm3+. CIE chromaticity and color temperature measurements show that the resulting TGCS may be a candidate as a white LED material pumped by a UV InGaN chip.

  3. Light-Emitting Diodes: A Hidden Treasure

    Science.gov (United States)

    Planinšic, Gorazd; Etkina, Eugenia

    2014-01-01

    LEDs, or light-emitting diodes, are cheap, easy to purchase, and thus commonly used in physics instruction as indicators of electric current or as sources of light (Fig. 1). In our opinion LEDs represent a unique piece of equipment that can be used to collect experimental evidence, and construct and test new ideas in almost every unit of a general…

  4. Light-Emitting Diodes: A Hidden Treasure

    Science.gov (United States)

    Planinšic, Gorazd; Etkina, Eugenia

    2014-01-01

    LEDs, or light-emitting diodes, are cheap, easy to purchase, and thus commonly used in physics instruction as indicators of electric current or as sources of light (Fig. 1). In our opinion LEDs represent a unique piece of equipment that can be used to collect experimental evidence, and construct and test new ideas in almost every unit of a general…

  5. Stability study of saturated red polymer light-emitting diodes

    Institute of Scientific and Technical Information of China (English)

    XU Wei; PENG JunBiao; XU YunHua; WANG Jian; HUANG Zhe; NIU QiaoLi; CAO Yong

    2007-01-01

    Saturated red polymer light-emitting diodes have been fabricated with a single emitting polymer blend layer of poly[2-(2-ethylhexyloxy)-5-methoxy-1,4-phenylenevinylene](MEH-PPV)and poly[9,9-dioctylfluorene-co-4,7-di-2-thienyl-2,1,3-benzothiadiazole](PFO-DBT15).Saturated red emission with the Commission Internationale de I'Eclairage(CIE)coordinates of(0.67,0.33)was obtained.The device stability was investigated.The results showed that energy transfer occurred from MEH-PPV to PFO-DBT15,and MEH-PPV improved the hole injection and transportation.

  6. Study on electroluminescence from porous silicon light-emitting diode

    Institute of Scientific and Technical Information of China (English)

    Yajun Yang; Qingshan Li; Xianyun Liu

    2006-01-01

    @@ Porous silicon (PS) light-emitting diode (LED) with an ITO/PS/p-Si/Al structure was fabricated by anodic oxidation method. Photoluminescence (PL) of the PS LED was measured with a peak at 593 nm, and electroluminescence (EL) was measured with a peak at 556 nm under the conditions of 7.5-V forward bias and 210-mA current intensity. The spectral width of EL was measured to be about 160 nm.

  7. Principles of phosphorescent organic light emitting devices.

    Science.gov (United States)

    Minaev, Boris; Baryshnikov, Gleb; Agren, Hans

    2014-02-07

    Organic light-emitting device (OLED) technology has found numerous applications in the development of solid state lighting, flat panel displays and flexible screens. These applications are already commercialized in mobile phones and TV sets. White OLEDs are of especial importance for lighting; they now use multilayer combinations of organic and elementoorganic dyes which emit various colors in the red, green and blue parts of the visible spectrum. At the same time the stability of phosphorescent blue emitters is still a major challenge for OLED applications. In this review we highlight the basic principles and the main mechanisms behind phosphorescent light emission of various classes of photofunctional OLED materials, like organic polymers and oligomers, electron and hole transport molecules, elementoorganic complexes with heavy metal central ions, and clarify connections between the main features of electronic structure and the photo-physical properties of the phosphorescent OLED materials.

  8. Light-Emitting Diodes: Learning New Physics

    Science.gov (United States)

    Planinšic, Gorazd; Etkina, Eugenia

    2015-01-01

    This is the third paper in our Light-Emitting Diodes series. The series aims to create a systematic library of LED-based materials and to provide the readers with the description of experiments and pedagogical treatment that would help their students construct, test, and apply physics concepts and mathematical relations. The first paper, published…

  9. Light-Emitting Diodes: Solving Complex Problems

    Science.gov (United States)

    Planinšic, Gorazd; Etkina, Eugenia

    2015-01-01

    This is the fourth paper in our Light-Emitting Diodes series. The series aims to create a systematic library of LED-based materials and to provide readers with the description of experiments and the pedagogical treatment that would help their students construct, test, and apply physics concepts and mathematical relations. The first paper provided…

  10. Light-Emitting Diodes: Learning New Physics

    Science.gov (United States)

    Planinšic, Gorazd; Etkina, Eugenia

    2015-01-01

    This is the third paper in our Light-Emitting Diodes series. The series aims to create a systematic library of LED-based materials and to provide the readers with the description of experiments and pedagogical treatment that would help their students construct, test, and apply physics concepts and mathematical relations. The first paper, published…

  11. Light Converting Inorganic Phosphors for White Light-Emitting Diodes

    Directory of Open Access Journals (Sweden)

    Chiao-Wen Yeh

    2010-03-01

    Full Text Available White light-emitting diodes (WLEDs have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV LEDs and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED or polymer light-emitting diode (PLED, have a number of advantages over conventional incandescent bulbs and halogen lamps, such as high efficiency to convert electrical energy into light, reliability and long operating lifetime. To meet with the further requirement of high color rendering index, warm light with low color temperature, high thermal stability and higher energy efficiency for WLEDs, new phosphors that can absorb excitation energy from blue or nUV LEDs and generate visible emissions efficiently are desired. The criteria of choosing the best phosphors, for blue (450-480 nm and nUV (380-400 nm LEDs, strongly depends on the absorption and emission of the phosphors. Moreover, the balance of light between the emission from blue-nUV LEDs and the emissions from phosphors (such as yellow from Y3Al5O12:Ce3+ is important to obtain white light with proper color rendering index and color temperature. Here, we will review the status of phosphors for LEDs and prospect the future development.

  12. Application of Surface Plasmonics for Semiconductor Light-Emitting Diodes

    DEFF Research Database (Denmark)

    Fadil, Ahmed

    This thesis addresses the lack of an efficient semiconductor light source at green emission colours. Considering InGaN based quantum-well (QW) light-emitters and light-emitting diodes (LEDs), various ways of applying surface plasmonics and nano-patterning to improve the efficiency, are investigated....... By placing metallic thin films or nanoparticles (NPs) in the near-field of QW light-emitters, it is possible to improve their internal quantum efficiency (IQE) through the Purcell enhancement effect. It has been a general understanding that in order to achieve surface plasmon (SP) coupling with QWs...... is presented to obtain light extraction efficiency (LEE) improvement through nano-patterning, and IQE improvement through SP-QW coupling. Considering the fabrication process aspect, dry-etching damage on the semiconductor light-emitters from the nano-patterning is also addressed. Different ion-damage treatment...

  13. Broadband mid-infrared superlattice light-emitting diodes

    Science.gov (United States)

    Ricker, R. J.; Provence, S. R.; Norton, D. T.; Boggess, T. F.; Prineas, J. P.

    2017-05-01

    InAs/GaSb type-II superlattice light-emitting diodes were fabricated to form a device that provides emission over the entire 3-5 μm mid-infrared transmission window. Variable bandgap emission regions were coupled together using tunnel junctions to emit at peak wavelengths of 3.3 μm, 3.5 μm, 3.7 μm, 3.9 μm, 4.1 μm, 4.4 μm, 4.7 μm, and 5.0 μm. Cascading the structure recycles the electrons in each emission region to emit several wavelengths simultaneously. At high current densities, the light-emitting diode spectra broadened into a continuous, broadband spectrum that covered the entire mid-infrared band. When cooled to 77 K, radiances of over 1 W/cm2 sr were achieved, demonstrating apparent temperatures above 1000 K over the 3-5 μm band. InAs/GaSb type-II superlattices are capable of emitting from 3 μm to 30 μm, and the device design can be expanded to include longer emission wavelengths.

  14. The Light-Emitting Diode as a Light Detector

    Science.gov (United States)

    Baird, William H.; Hack, W. Nathan; Tran, Kiet; Vira, Zeeshan; Pickett, Matthew

    2011-01-01

    A light-emitting diode (LED) and operational amplifier can be used as an affordable method to provide a digital output indicating detection of an intense light source such as a laser beam or high-output LED. When coupled with a microcontroller, the combination can be used as a multiple photogate and timer for under $50. A similar circuit is used…

  15. Inkjet printing the three organic functional layers of two-colored organic light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Coenen, Michiel J.J., E-mail: Michiel.Coenen@tmc.nl [Holst Centre, PO BOX 8550, 5605 KN Eindhoven (Netherlands); Slaats, Thijs M.W.L.; Eggenhuisen, Tamara M. [Holst Centre, PO BOX 8550, 5605 KN Eindhoven (Netherlands); Groen, Pim [Holst Centre, PO BOX 8550, 5605 KN Eindhoven (Netherlands); Novel Aerospace Materials Group, Faculty of Aerospace Engineering, Delft University of Technology, Kluyverweg 1, 2629HS Delft (Netherlands)

    2015-05-29

    Inkjet printing allows for the roll-2-roll fabrication of organic electronic devices at an industrial scale. In this paper we demonstrate the fabrication of two-colored organic light emitting diodes (OLEDs) in which three adjacent organic device layers were inkjet printed from halogen free inks. The resulting devices demonstrate the possibilities offered by this technique for the fabrication of OLEDs for signage and personalized electronics. - Highlights: • Two-colored organic light emitting diodes with 3 inkjet printed device layers were fabricated. • All materials were printed from halogen free inks. • Inkjet printing of emissive materials is suitable for signage applications.

  16. Resonant cavity light-emitting diodes: modeling, design, and optimization

    Science.gov (United States)

    Dumitrescu, Mihail M.; Sipila, Pekko; Vilokkinen, Ville; Toikkanen, L.; Melanen, Petri; Saarinen, Mika J.; Orsila, Seppo; Savolainen, Pekka; Toivonen, Mika; Pessa, Markus

    2000-02-01

    Monolithic top emitting resonant cavity light-emitting diodes operating in the 650 and 880 nm ranges have been prepared using solid-source molecular beam epitaxy growth. Transfer matrix based modeling together with a self- consistent model have been sued to optimize the devices' performances. The design of the layer structure and doping profile was assisted by computer simulations that enabled many device improvements. Among the most significant ones intermediate-composition barrier-reduction layers were introduced in the DBR mirrors for improving the I-V characteristics and the cavity and mirrors were detuned aiming at maximum extraction efficiency. The fabricated devices showed line widths below 15 nm, CW light power output of 8 and 22.5 mW, and external quantum efficiencies of 3 percent and 14.1 percent in the 650 nm and 880 nm ranges, respectively - while the simulations indicate significant performance improvement possibilities.

  17. Safety of light emitting diodes in toys.

    Science.gov (United States)

    Higlett, M P; O'Hagan, J B; Khazova, M

    2012-03-01

    Light emitting diodes (LEDs) are increasingly being used in toys. An assessment methodology is described for determining the accessible emission limits for the optical radiation from the toys, which takes account of expected use and reasonably foreseeable misuse of toys. Where data are available, it may be possible to assess the toy from the data sheet alone. If this information is not available, a simple measurement protocol is proposed.

  18. Does antimatter emit a new light?

    Science.gov (United States)

    Santilli, Ruggero Maria

    1997-08-01

    Contemporary theories of antimatter have a number of insufficiencies which stimulated the recent construction of the new isodual theory based on a certain anti-isomorphic map of all (classical and quantum) formulations of matter called isoduality. In this note we show that the isodual theory predicts that antimatter emits a new light, called isodual light, which can be distinguished from the ordinary light emitted by matter via gravitational interactions (only). In particular, the isodual theory predicts that all stable antiparticles such as the isodual photon, the positron and the antiproton experience antigravity in the field of matter (defined as the reversal of the sign of the curvature tensor). The antihydrogen atom is therefore predicted to: experience antigravity in the field of Earth; emit the isodual photon; and have the same spectroscopy of the hydrogen atom, although subjected to an anti-isomorphic isodual map. In this note we also show that the isodual theory predicts that bound states of elementary particles and antiparticles (such as the positronium) experience ordinary gravitation in both fields of matter and antimatter, thus bypassing known objections against antigravity. A number of intriguing and fundamental, open theoretical and experimental problems of “the new physics of antimatter” are pointed out.

  19. Bright light-emitting diodes based on organometal halide perovskite.

    Science.gov (United States)

    Tan, Zhi-Kuang; Moghaddam, Reza Saberi; Lai, May Ling; Docampo, Pablo; Higler, Ruben; Deschler, Felix; Price, Michael; Sadhanala, Aditya; Pazos, Luis M; Credgington, Dan; Hanusch, Fabian; Bein, Thomas; Snaith, Henry J; Friend, Richard H

    2014-09-01

    Solid-state light-emitting devices based on direct-bandgap semiconductors have, over the past two decades, been utilized as energy-efficient sources of lighting. However, fabrication of these devices typically relies on expensive high-temperature and high-vacuum processes, rendering them uneconomical for use in large-area displays. Here, we report high-brightness light-emitting diodes based on solution-processed organometal halide perovskites. We demonstrate electroluminescence in the near-infrared, green and red by tuning the halide compositions in the perovskite. In our infrared device, a thin 15 nm layer of CH3NH3PbI(3-x)Cl(x) perovskite emitter is sandwiched between larger-bandgap titanium dioxide (TiO2) and poly(9,9'-dioctylfluorene) (F8) layers, effectively confining electrons and holes in the perovskite layer for radiative recombination. We report an infrared radiance of 13.2 W sr(-1) m(-2) at a current density of 363 mA cm(-2), with highest external and internal quantum efficiencies of 0.76% and 3.4%, respectively. In our green light-emitting device with an ITO/PEDOT:PSS/CH3NH3PbBr3/F8/Ca/Ag structure, we achieved a luminance of 364 cd m(-2) at a current density of 123 mA cm(-2), giving external and internal quantum efficiencies of 0.1% and 0.4%, respectively. We show, using photoluminescence studies, that radiative bimolecular recombination is dominant at higher excitation densities. Hence, the quantum efficiencies of the perovskite light-emitting diodes increase at higher current densities. This demonstration of effective perovskite electroluminescence offers scope for developing this unique class of materials into efficient and colour-tunable light emitters for low-cost display, lighting and optical communication applications.

  20. Hybrid fluorescent layer emitting polarized light

    Science.gov (United States)

    Mohammadimasoudi, Mohammad; Beeckman, Jeroen; Hens, Zeger; Neyts, Kristiaan

    2017-07-01

    Semiconductor nanorods have anisotropic absorption and emission properties. In this work a hybrid luminescent layer is produced based on a mixture of CdSe/CdS nanorods dispersed in a liquid crystal that is aligned by an electric field and polymerized by UV illumination. The film emits light with polarization ratio 0.6 (polarization contrast 4:1). Clusters of nanorods in liquid crystal can be avoided by applying an AC electric field with sufficient amplitude. This method can be made compatible with large-scale processing on flexible transparent substrates. Thin polarized light emitters can be used in LCD backlights or solar concentrators to increase the efficiency.

  1. Efficient organic light emitting-diodes (OLEDs)

    CERN Document Server

    Chang, Yi-Lu

    2015-01-01

    Following two decades of intense research globally, the organic light-emitting diode (OLED) has steadily emerged as the ultimate display technology of choice for the coming decades. Portable active matrix OLED displays have already become prevalent, and even large-sized ultra-high definition 4K TVs are being mass-produced. More exotic applications such as wearable displays have been commercialized recently. With the burgeoning success in displays, researchers are actively bringing the technology forward into the exciting solid-state lighting market. This book presents the knowledge needed for

  2. Hybrid fluorescent layer emitting polarized light

    Directory of Open Access Journals (Sweden)

    Mohammad Mohammadimasoudi

    2017-07-01

    Full Text Available Semiconductor nanorods have anisotropic absorption and emission properties. In this work a hybrid luminescent layer is produced based on a mixture of CdSe/CdS nanorods dispersed in a liquid crystal that is aligned by an electric field and polymerized by UV illumination. The film emits light with polarization ratio 0.6 (polarization contrast 4:1. Clusters of nanorods in liquid crystal can be avoided by applying an AC electric field with sufficient amplitude. This method can be made compatible with large-scale processing on flexible transparent substrates. Thin polarized light emitters can be used in LCD backlights or solar concentrators to increase the efficiency.

  3. Silicon Light Emitting Devices in CMOS Technology

    Institute of Scientific and Technical Information of China (English)

    CHEN Hong-Da; LIU Hai-Jun; LIU Jin-Bin; GU Ming; HUANG Bei-Ju

    2007-01-01

    @@ Two silicon light emitting devices with different structures are realized in standard 0.35 μm complementary metal-oxide-semiconductor (CMOS) technology. They operate in reverse breakdown mode and can be turned on at 8.3 V. Output optical powers of 13.6nW and 12.1 nW are measured at 10 V and 100 mA, respectively, and both the calculated light emission intensities are more than 1 mW/cm2. The optical spectra of the two devices are between 600-790 nm with a clear peak near 760 nm.

  4. Hybrid perovskites: Approaches towards light-emitting devices

    KAUST Repository

    Alias, Mohd Sharizal

    2016-10-06

    The high optical gain and absorption of organic-inorganic hybrid perovskites have attracted extensive research for photonic device applications. Using the bromide halide as an example, we present key approaches of our work towards realizing efficient perovskites based light-emitters. The approaches involved determination of optical constants for the hybrid perovskites thin films, fabrication of photonic nanostructures in the form of subwavelength grating reflector patterned directly on the hybrid perovskites as light manipulation layer, and enhancing the emission property of the hybrid perovskites by using microcavity structure. Our results provide a platform for realization of hybrid perovskites based light-emitting devices for solid-state lighting and display applications. © 2016 IEEE.

  5. Highly Efficient, Simplified, Solution-Processed Thermally Activated Delayed-Fluorescence Organic Light-Emitting Diodes.

    Science.gov (United States)

    Kim, Young-Hoon; Wolf, Christoph; Cho, Himchan; Jeong, Su-Hun; Lee, Tae-Woo

    2016-01-27

    Highly efficient, simplified, solution-processed thermally activated delayed-fluorescence organic light-emitting diodes can be realized by using pure-organic thermally activated delayed fluorescence emitters and a multifunctional buffer hole-injection layer, in which high EQE (≈24%) and current efficiency (≈73 cd A(-1) ) are demonstrated. High-efficiency fluorescence red-emitting and blue-emitting devices can also be fabricated in this manner.

  6. Tungsten oxide buffer layers fabricated in an inert sol-gel process at room-temperature for blue organic light-emitting diodes.

    Science.gov (United States)

    Höfle, Stefan; Bruns, Michael; Strässle, Stefan; Feldmann, Claus; Lemmer, Uli; Colsmann, Alexander

    2013-08-14

    WO3 deposition from tungsten ethoxide precursor solutions at room temperature is demonstrated. The W(OEt)6 precursor can be converted under inert conditions and hence avoids sample contamination with oxygen, opening a pathway to more stable devices. The stoichiometry of all WO3 layers and the optoelectronic performance of the respective SMOLEDs well match thermally evaporated WO3 and its corresponding SMOLEDs. The solution processed WO3 hole injection layers enable the fabrication of blue phosphorescent OLEDs with low onset voltage and current efficiencies of up to 14 cd A(-1) .

  7. Organic bistable light-emitting devices

    Science.gov (United States)

    Ma, Liping; Liu, Jie; Pyo, Seungmoon; Yang, Yang

    2002-01-01

    An organic bistable device, with a unique trilayer structure consisting of organic/metal/organic sandwiched between two outmost metal electrodes, has been invented. [Y. Yang, L. P. Ma, and J. Liu, U.S. Patent Pending, U.S. 01/17206 (2001)]. When the device is biased with voltages beyond a critical value (for example 3 V), the device suddenly switches from a high-impedance state to a low-impedance state, with a difference in injection current of more than 6 orders of magnitude. When the device is switched to the low-impedance state, it remains in that state even when the power is off. (This is called "nonvolatile" phenomenon in memory devices.) The high-impedance state can be recovered by applying a reverse bias; therefore, this bistable device is ideal for memory applications. In order to increase the data read-out rate of this type of memory device, a regular polymer light-emitting diode has been integrated with the organic bistable device, such that it can be read out optically. These features make the organic bistable light-emitting device a promising candidate for several applications, such as digital memories, opto-electronic books, and recordable papers.

  8. Fabrication and characterization of Zn O:Zn(n{sup +})/porous-silicon/Si(p) heterojunctions for white light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Vasquez A, M. A. [INAOE, Department of Electronics, 72840 Puebla, Pue. (Mexico); Romero P, G.; Pena S, R. [IPN, Centro de Investigacion y de Estudios Avanzados, Departamento de Ingenieria Electrica, SEES, Av. Intituto Politecnico Nacional No. 2508, Col. San Pedro Zacatenco, 07360 Ciudad de Mexico (Mexico); Andraca A, J. A. [IPN, Centro de Nanociencias y Micro y Nanotecnologias, Av. Luis Enrique Erro s/n, Col. San Pedro Zacatenco, 07738 Ciudad de Mexico (Mexico)

    2016-11-01

    The fabrication and characterization of electro luminescent Zn O:Zn(n{sup +})/porous silicon/Si(p) heterojunctions is presented. Highly conductive Zn O films (Zn O:Zn(n{sup +})) were produced by applying a temperature annealing at 400 degrees Celsius by 5 min to the Zn O/Zn/Zn O arrange formed by DC sputtering, and the porous silicon (PS) films were prepared on p-type (100) Si wafers by anodic etching. The Zn O: Zn(n{sup +})/PS/Si(p) heterojunction is accomplished by applying a brief temperature annealing stage to the entire Zn O/Zn/Zn O/PS/Si structure to preserve the PS luminescent characteristics. The Zn O:Zn(n{sup +}) films were characterized by X-ray diffraction and Hall-van der Pauw measurements. The PS and Zn O:Zn(n{sup +}) films were also studied by photoluminescence (Pl) measurements. The current-voltage characteristics of the heterojunctions showed well defined rectifying behavior with a turn-on voltage of 1.5 V and ideality factor of 5.4. The high ideality factor is explained by the presence of electron tunneling transport aided by energy levels related to the defects at the heterojunction interface and into the PS film. The saturation current and the series resistance of the heterostructure were 4 x 10{sup -7} A/cm{sup 2} and 16 Ω-cm{sup 2}, respectively. White color electroluminescence is easily observed at the naked eye when excited with square wave pulses of 8 V and 1 Khz. (Author)

  9. Light-Emitting Diodes: Phosphorescent Nanocluster Light-Emitting Diodes (Adv. Mater. 2/2016).

    Science.gov (United States)

    Kuttipillai, Padmanaban S; Zhao, Yimu; Traverse, Christopher J; Staples, Richard J; Levine, Benjamin G; Lunt, Richard R

    2016-01-13

    On page 320, R. R. Lunt and co-workers demonstrate electroluminescence from earth-abundant phosphorescent metal halide nanoclusters. These inorganic emitters, which exhibit rich photophysics combined with a high phosphorescence quantum yield, are employed in red and near-infrared light-emitting diodes, providing a new platform of phosphorescent emitters for low-cost and high-performance light-emission applications.

  10. High light extraction efficiency in bulk-GaN based volumetric violet light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    David, Aurelien, E-mail: adavid@soraa.com; Hurni, Christophe A.; Aldaz, Rafael I.; Cich, Michael J.; Ellis, Bryan; Huang, Kevin; Steranka, Frank M.; Krames, Michael R. [Soraa Inc., 6500 Kaiser Dr., Fremont, California 94555 (United States)

    2014-12-08

    We report on the light extraction efficiency of III-Nitride violet light-emitting diodes with a volumetric flip-chip architecture. We introduce an accurate optical model to account for light extraction. We fabricate a series of devices with varying optical configurations and fit their measured performance with our model. We show the importance of second-order optical effects like photon recycling and residual surface roughness to account for data. We conclude that our devices reach an extraction efficiency of 89%.

  11. Effect of Heat Treatment on Luminescent Properties of White Organic Light Emitting Device

    Institute of Scientific and Technical Information of China (English)

    LI Juan; HUA Yu-lin; WANG Chang-sheng; XIONG Shao-zhen

    2004-01-01

    The white organic light emitting device (OLED) with single-structure using a polymer blend as the light emitting layer is fabricated. Heat treatment is used to control the ratio between the intensities of main electroluminescent spectral peaks. The electroluminescent spectrum of our device is quite similar to that of white inorganic LED produced by Nichia Corporation after being annealed, and its turn-on voltage can be decreased by 1 V.

  12. Colloidal quantum dot light-emitting devices

    Directory of Open Access Journals (Sweden)

    Vanessa Wood

    2010-07-01

    Full Text Available Colloidal quantum dot light-emitting devices (QD-LEDs have generated considerable interest for applications such as thin film displays with improved color saturation and white lighting with a high color rendering index (CRI. We review the key advantages of using quantum dots (QDs in display and lighting applications, including their color purity, solution processability, and stability. After highlighting the main developments in QD-LED technology in the past 15 years, we describe the three mechanisms for exciting QDs – optical excitation, Förster energy transfer, and direct charge injection – that have been leveraged to create QD-LEDs. We outline the challenges facing QD-LED development, such as QD charging and QD luminescence quenching in QD thin films. We describe how optical downconversion schemes have enabled researchers to overcome these challenges and develop commercial lighting products that incorporate QDs to achieve desirable color temperature and a high CRI while maintaining efficiencies comparable to inorganic white LEDs (>65 lumens per Watt. We conclude by discussing some current directions in QD research that focus on achieving higher efficiency and air-stable QD-LEDs using electrical excitation of the luminescent QDs.

  13. Fabrication and enhanced photoluminescence properties of NaLa(MoO$_4$)$_2$: Sm$^{3+}$, Bi$^{3+}$ phosphors with high efficiency white-light-emitting

    Indian Academy of Sciences (India)

    XINGSHUANG ZHANG; GUANGJUN ZHOU; JUAN ZHOU; PENG KONG; ZHICHAO YU; ZHICHAO YU; JIE ZHAN

    2017-09-01

    The tetragonal scheelite-type Sm$^{3+}$/Bi$^{3+}$ ions co-doped with NaLa(MoO$_4$)$_2$ phosphors were synthesized by a facile sol–gel and combustion process using citric acid as complexing agent. The crystal structure and morphology of theseas-prepared samples were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Furthermore,UV-absorption and the photoluminescence (PL) properties of these phosphors were systematically investigated and the PLof the phosphors shows strong white light emissions. Efficient energy transfer from the MoO$^{2-}_4$ group or Bi$^{3+}$ ions to Sm$^{3+}$ ions was established by PL investigation excited at 405 nm. The PL intensity of the studied materials was investigated asa function of different Sm$^{3+}$ and Bi$^{3+}$ concentrations. The PL investigations revealed that the phosphors exhibit apparentcharacteristic emissions, which is ascribed to the transition from the ground state energy level 4G5/2 to excited state energylevels ${}^6$H$_J$ ($J = 5/2$, 7/2, 9/2) and the NaLa(MoO$_4$)$_2$: 4 mol% Sm$^{3+}$ and NaLa(MoO$_4$)$_2$: 4 mol% Sm$^{3+}$, 8 mol% Bi$^{3+}$ present white emissions with the CIE coordinates of (0.350, 0.285) and (0.285, 0.229), respectively. The absolute quantum efficiencies of the phosphors are 40% (NaLa(MoO$_4$)$_2$: 4 mol% Sm$^{3+}$) and 52% (NaLa(MoO$_4$)$_2$: 4 mol% Sm$^{3+}$, 8 mol% Bi$^{3+}$), respectively.

  14. Bipolar Host Materials for Organic Light-Emitting Diodes.

    Science.gov (United States)

    Yook, Kyoung Soo; Lee, Jun Yeob

    2016-02-01

    It is important to balance holes and electrons in the emitting layer of organic light-emitting diodes to maximize recombination efficiency and the accompanying external quantum efficiency. Therefore, the host materials of the emitting layer should transport both holes and electrons for the charge balance. From this perspective, bipolar hosts have been popular as the host materials of thermally activated delayed fluorescent devices and phosphorescent organic light-emitting diodes. In this review, we have summarized recent developments of bipolar hosts and suggested perspectives of host materials for organic light-emitting diodes.

  15. Spectrum study of top-emitting organic light-emitting devices with micro-cavity structure

    Institute of Scientific and Technical Information of China (English)

    Liu Xiang; Wei Fuxiang; Liu Hui

    2009-01-01

    Blue and white top-emitting organic light-emitting devices OLEDs with cavity effect have been fabricated.TBADN:3%DSAPh and Alq3:DCJTB/TBADN:TBPe/Alq3:C545 were used as emitting materials of microcavity OLEDs.On a patterned glass substrate,silver was deposited as reflective anode,and copper phthalocyanine (CuPc)layer as HIL and 4'-bis[N-(1-Naphthyl)-N-phenyl-amino]biphenyl(NPB)layer as HTL were made.Al/Ag thin films were made as semi-transparent cathode with a transmittance of about 30%.By changing the thickness of indium tin oxide ITO,deep blue with Commission Internationale de L'Eclairage chromaticity coordinates(CIEx,y)of(0.141,0.049)was obtained on TBADN:3%DSAPh devices,and different color(red,blue and green)was obrained on Alq3:DCJTB/TBADN:TBPe/Alq3:C545 devices,full width at half maxima(FWHM)was only 17 nm.The spectral intensity and FWHM of emission in cavity devices have also been studied.

  16. Ionic liquid polyoxometalates as light emitting materials

    Energy Technology Data Exchange (ETDEWEB)

    Ortiz-acosta, Denisse [Los Alamos National Laboratory; Del Sesto, Rico E [Los Alamos National Laboratory; Scott, Brian [Los Alamos National Laboratory; Bennett, Bryan L [Los Alamos National Laboratory; Purdy, Geraldine M [Los Alamos National Laboratory; Muenchausen, Ross E [Los Alamos National Laboratory; Mc Kigney, Edward [Los Alamos National Laboratory; Gilbertson, Robert [Los Alamos National Laboratory

    2008-01-01

    The low melting point, negligible vapor pressure, good solubility, and thermal and chemical stability make ionic liquids useful materials for a wide variety of applications. Polyoxometalates are early transition metal oxygen clusters that can be synthesized in many different sizes and with a variety of heterometals. The most attractive feature of POMs is that their physical properties, in particular electrical, magnetic, and optical properties, can be easily modified following known procedures. It has been shown that POMs can exhibit cooperative properties, as superconductivity and energy transfer. POM ionic liquids can be obtained by selecting the appropliate cation. Different alkyl ammonium and alkyl phosphonium salts are being used to produce new POM ionic liquids together with organic or inorganic luminescent centers to design light emitting materials. Ammonium and phosphonium cations with activated, polymerizable groups are being used to further polymerize the ionic liquid into transparent, solid materials with high metal density.

  17. Logarithmic current electrometer using light emitting diodes

    Science.gov (United States)

    Acharya, Y. B.; Aggarwal, A. K.

    1996-02-01

    The limit of low current measurement using logarithmic current to voltage converter is improved by 6 - 7 orders of magnitude with the use of diodes of large band gap as compared with silicon diodes. Low cost commercially available light emitting diodes (LEDs) have been used for this purpose. A theoretical study and experimental measurement of device constant and reverse saturation currents of the whole class of commercially available LEDs has been carried out. A circuit has been developed which makes use of a new technique for temperature compensation and its performance is compared with the technique in common use. The performance of the amplifier is found to be stable in the temperature range 5 - 600957-0233/7/2/005/img5 for both polarity of signals from 0957-0233/7/2/005/img6 to 0957-0233/7/2/005/img7 A.

  18. Near infrared polymer light-emitting diodes

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yong; YANG Jian; HOU Qiong; MO Yueqi; PENG Junbiao; CAO Yong

    2005-01-01

    High efficiency of near infrared polymer light-emitting diodes with bilayer structure was obtained. The diode structure is ITO/PEDOT/L1/L2/Ba/Al, where L1 is phenyl-substituted poly [p-phenylphenylene vinylene] derivative (P-PPV), L2 is 9,9-dioctylfluorene (DOF) and 4,7- bis(3-hexylthiophen)-2-yl-2,1,3-naphthothiadiazole (HDNT) copolymer (PFHDNT10). The electroluminescence (EL) spectrum of diodes from PFHDNT10 is at 750 nm located in the range of near infrared. The maximum external quantum efficiency is up to 2.1% at the current density of 35 mA/cm2. The improvement of the diode's performances was considered to be the irradiative excitons confined in the interface between L1 and L2 layers.

  19. Organic Light-Emitting Diodes Driven by Organic Transistors

    Institute of Scientific and Technical Information of China (English)

    胡远川; 董桂芳; 王立铎; 梁琰; 邱勇

    2004-01-01

    Organic thin-film field-effect transistors (OTFTs) with pentacene as the semiconductor have been fabricated for driving an organic light-emitting diode (OLED). The driving circuit includes two OTFTs and one storage capacitor. The field-effect mobility of the transistors in the driving circuit is more than 0.3 cm2/Vs, and the on/off ratio is larger than 104. The light-emission area of the OLED is 0. 04mm2 and the brightness is larger than 400cd/m2 when the selected line voltage, data line voltage and drive voltage all are -40 V. The responding characteristics and holding characteristics are also researched when the selected line voltage and the date line voltage are changed.

  20. Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology

    Institute of Scientific and Technical Information of China (English)

    Wang Wei; Huang Bei-Ju; Dong Zan; Chen Hong-Da

    2011-01-01

    A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes: it can emit visible to near infra-red (NIR) light (the spectrum ranges from 500 nm to 1000 nm) in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light (the spectrum ranges from 900 nm to 1300 nm) in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.

  1. Recent Advances in Conjugated Polymers for Light Emitting Devices

    Directory of Open Access Journals (Sweden)

    Mohan Raja

    2011-03-01

    Full Text Available A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review.

  2. Recent advances in conjugated polymers for light emitting devices.

    Science.gov (United States)

    Alsalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

    2011-01-01

    A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review.

  3. Printable candlelight-style organic light-emitting diode

    Science.gov (United States)

    Jou, J. H.; Singh, M.; Song, W. C.; Liu, S. H.

    2017-06-01

    Candles or oil lamps are currently the most friendly lighting source to human eyes, physiology, ecosystems, artifacts, environment, and night skies due to their blue light-less emission. Candle light also exhibits high light-quality that provides visual comfort. However, they are relatively low in power efficacy (0.3 lm/W), making them energy-wasting, besides having problems like scorching hot, burning, catching fire, flickering, carbon blacking, oxygen consuming, and release of green house gas etc. In contrast, candlelight organic light-emitting diode (OLED) can be made blue-hazard free and energy-efficient. The remaining challenges are to maximize its light-quality and enable printing feasibility, the latter of which would pave a way to cost-effective manufacturing. We hence demonstrate herein the design and fabrication of a candlelight OLED via wet-process. From retina protection perspective, its emission is 13, 12 and 8 times better than those of the blue-enriched white CFL, LED and OLED. If used at night, it is 9, 6 and 4 times better from melatonin generation perspective.

  4. On the photosynthetic responses of crops to intracanopy lighting with light emitting diodes

    NARCIS (Netherlands)

    Trouwborst, G.

    2011-01-01

    Key words: Cucumis sativus, intracanopy lighting, light-emitting diodes (LEDs), light distribution, light interception, light quality, photosynthesis, photosynthetic acclimation Assimilation lighting is a production factor of increasing importance in Dutch greenhouse horticulture. Assimilation

  5. Design, Fabrication and Characterization for Multi-coloured Light Emitting Diode Based on Colloidal Quantum Dots%胶体量子点多色LED的设计、制备和表征

    Institute of Scientific and Technical Information of China (English)

    张文君; 翟保才; 许键

    2012-01-01

    Colloidal Quantum Dots (QDs) acted as luminescent layer in light emitting device can be tuned across from visible to near-infrared spectrum by changing the size of QD, and QD-LED has a narrow bandwidth (Full-width at Half-maximum (FWHM) of the Electroluminescence (EL) peak of ~30 nm). Core-shell quantum dots (wavelength at 523nm and 608nm) with a CdSe core and a ZnS shell were used as emissive layers in the devices. Poly-TPD as Hole-transport Layer (HTL) and ZnO as Electron-transport Layer (ETL) were used in device. By fabrication of red and green emitting device based on quantum dots, we researched the feature of device which provides reference for quantum-dot-based LEDs used in the cockpit and medical apparatus. However, the brightness, efficiency and lifetime of QD-LED need to be improved to meet the requirements of commercialization in the near future.%量子点LED采用胶体量子点为LED发光层,通过调节量子点的尺寸可以制作出覆盖可见以及近红外光谱的量子点LED(QD-LED),而且量子点LED器件发出的光谱范围很窄(光谱半高宽可达30 nm).为了研究不同发光颜色的QD-LED器件特性,本文采用具有523 nm和608 nm发光波长的CdSe/ZnS核壳型量子点为发光层、poly-TPD为空穴传输层、ZnO为电子传输层,制备了量子点红光和绿光LED并讨论了器件的相关特性.这些结果对量子点LED在飞机驾驶舱以及医疗器械照明方面的应用提供了参考,但要满足商业化的需求其寿命、亮度以及效率还需要进一步的提高.

  6. Laminated active matrix organic light-emitting devices

    Science.gov (United States)

    Liu, Hongyu; Sun, Runguang

    2008-02-01

    Laminated active matrix organic light-emitting device (AMOLED) realizing top emission by using bottom-emitting organic light-emitting diode (OLED) structure was proposed. The multilayer structure of OLED deposited in the conventional sequence is not on the thin film transistor (TFT) backplane but on the OLED plane. The contact between the indium tin oxide (ITO) electrode of TFT backplane and metal cathode of OLED plane is implemented by using transfer electrode. The stringent pixel design for aperture ratio of the bottom-emitting AMOLED, as well as special technology for the top ITO electrode of top-emitting AMOLED, is unnecessary in the laminated AMOLED.

  7. Improved performance of organic light-emitting diodes fabricated on Al-doped ZnO anodes incorporating a homogeneous Al-doped ZnO buffer layer grown by atomic layer deposition.

    Science.gov (United States)

    Choi, Yong-June; Gong, Su Cheol; Park, Chang-Sun; Lee, Hong-Sub; Jang, Ji Geun; Chang, Ho Jung; Yeom, Geun Young; Park, Hyung-Ho

    2013-05-01

    In this work, we investigated the use of a homogeneous Al-doped zinc oxide (AZO) buffer layer to improve the performance of an organic light-emitting diode (OLED) device fabricated on an AZO anode. For this, 10-nm-thick AZO buffer layers with Al doping concentrations of 3.1, 4.1, and 5.1 at % were grown on 140-nm-thick AZO anode films containing 2.1 at % Al by atomic layer deposition. The electrical resistivity of the AZO anode with a homogeneous AZO buffer layer decreased with an increase in Al doping concentration up to 4.1 at %; however, the resistivity increased at higher doping concentrations in the AZO buffer layer. On the other hand, the work functions of the AZO anode with the AZO buffer layer containing various Al doping concentrations gradually increased with an increase in Al doping concentration from 3.1 to 5.1 at %. Therefore, the best film properties were obtained for an AZO anode with an AZO buffer layer containing 4.1 at % Al, and the work function value for this film was 4.64 eV. The highest luminance and current efficiency values were optimized to be 20290 cd/m(2) and 13.4 cd/A, respectively, with the OLED device composed of a DNTPD/TAPC/Bebq2:10% doped RP-411/Bphen/LiF/Al structure on an AZO anode with an AZO buffer layer containing 4.1 at % Al.

  8. High-quality uniaxial In(x)Ga(1-x)N/GaN multiple quantum well (MQW) nanowires (NWs) on Si(111) grown by metal-organic chemical vapor deposition (MOCVD) and light-emitting diode (LED) fabrication.

    Science.gov (United States)

    Ra, Yong-Ho; Navamathavan, R; Park, Ji-Hyeon; Lee, Cheul-Ro

    2013-03-01

    This article describes the growth and device characteristics of vertically aligned high-quality uniaxial p-GaN/InxGa1-xN/GaN multiple quantum wells (MQW)/n-GaN nanowires (NWs) on Si(111) substrates grown by metal-organic chemical vapor deposition (MOCVD) technique. The resultant nanowires (NWs), with a diameter of 200-250 nm, have an average length of 2 μm. The feasibility of growing high-quality NWs with well-controlled indium composition MQW structure is demonstrated. These resultant NWs grown on Si(111) substrates were utilized for fabricating vertical-type light-emitting diodes (LEDs). The steep and intense photoluminescence (PL) and cathodoluminescence (CL) spectra are observed, based on the strain-free NWs on Si(111) substrates. High-resolution transmission electron microscopy (HR-TEM) analysis revealed that the MQW NWs are grown along the c-plane with uniform thickness. The current-voltage (I-V) characteristics of these NWs exhibited typical p-n junction LEDs and showed a sharp onset voltage at 2.75 V in the forward bias. The output power is linearly increased with increasing current. The result indicates that the pulsed MOCVD technique is an effective method to grow uniaxial p-GaN/InxGa1-xN/GaN MQW/n-GaN NWs on Si(111), which is more advantageous than other growth techniques, such as molecular beam epitaxy. These results suggest the uniaxial NWs are promising to allow flat-band quantum structures, which can enhance the efficiency of LEDs.

  9. Light collection optics for measuring flux and spectrum from light-emitting devices

    Science.gov (United States)

    McCord, Mark A.; DiRegolo, Joseph A.; Gluszczak, Michael R.

    2016-05-24

    Systems and methods for accurately measuring the luminous flux and color (spectra) from light-emitting devices are disclosed. An integrating sphere may be utilized to directly receive a first portion of light emitted by a light-emitting device through an opening defined on the integrating sphere. A light collector may be utilized to collect a second portion of light emitted by the light-emitting device and direct the second portion of light into the integrating sphere through the opening defined on the integrating sphere. A spectrometer may be utilized to measure at least one property of the first portion and the second portion of light received by the integrating sphere.

  10. Efficient semiconductor light-emitting device and method

    Science.gov (United States)

    Choquette, Kent D.; Lear, Kevin L.; Schneider, Jr., Richard P.

    1996-01-01

    A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).

  11. Organic light-emitting diodes: High-throughput virtual screening

    Science.gov (United States)

    Hirata, Shuzo; Shizu, Katsuyuki

    2016-10-01

    Computer networks, trained with data from delayed-fluorescence materials that have been successfully used in organic light-emitting diodes, facilitate the high-speed prediction of good emitters for display and lighting applications.

  12. Silicon light-emitting diode antifuse: properties and devices

    NARCIS (Netherlands)

    Le Minh, P.; Holleman, J.

    2006-01-01

    This paper reviews our research on the silicon light-emitting diode antifuse, a tiny source featuring a full white-light spectrum. Optical and electrical properties of the device are discussed together with the modelling of the spectral emission, explaining the emitting mechanism of the device. An e

  13. CoPt ferromagnetic injector in light-emitting Schottky diodes based on InGaAs/GaAs nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Zdoroveyshchev, A. V., E-mail: zdorovei@gmail.com; Dorokhin, M. V.; Demina, P. B. [Lobachevsky State University of Nizhny Novgorod, Physical–Technical Research Institute (Russian Federation); Kudrin, A. V. [Lobachevsky State University of Nizhny Novgorod (Russian Federation); Vikhrova, O. V. [Lobachevsky State University of Nizhny Novgorod, Physical–Technical Research Institute (Russian Federation); Ved’, M. V.; Danilov, Yu. A. [Lobachevsky State University of Nizhny Novgorod (Russian Federation); Erofeeva, I. V. [Lobachevsky State University of Nizhny Novgorod, Physical–Technical Research Institute (Russian Federation); Krjukov, R. N.; Nikolichev, D. E. [Lobachevsky State University of Nizhny Novgorod (Russian Federation)

    2015-12-15

    The possibility of fabricating a ferromagnetic injector based on a near-equiatomic CoPt alloy with pronounced perpendicular magnetization anisotropy in the InGaAs/GaAs spin light-emitting diode is shown. The physical properties of experimental spin light-emitting diode prototypes are comprehensively studied. Circularly polarized electroluminescence of fabricated diodes is obtained in zero magnetic field due to the remanent magnetization of CoPt layers.

  14. High mobility solution-processed hybrid light emitting transistors

    Energy Technology Data Exchange (ETDEWEB)

    Walker, Bright; Kim, Jin Young [School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology, Ulsan 689-798 (Korea, Republic of); Ullah, Mujeeb; Burn, Paul L.; Namdas, Ebinazar B., E-mail: e.namdas@uq.edu.au, E-mail: seojh@dau.ac.kr [Centre for Organic Photonics and Electronics, University of Queensland, Brisbane, Queensland 4072 (Australia); Chae, Gil Jo [Department of Materials Physics, Dong-A University, Busan 604-714 (Korea, Republic of); Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Cho, Shinuk [Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Seo, Jung Hwa, E-mail: e.namdas@uq.edu.au, E-mail: seojh@dau.ac.kr [Department of Materials Physics, Dong-A University, Busan 604-714 (Korea, Republic of)

    2014-11-03

    We report the design, fabrication, and characterization of high-performance, solution-processed hybrid (inorganic-organic) light emitting transistors (HLETs). The devices employ a high-mobility, solution-processed cadmium sulfide layer as the switching and transport layer, with a conjugated polymer Super Yellow as an emissive material in non-planar source/drain transistor geometry. We demonstrate HLETs with electron mobilities of up to 19.5 cm{sup 2}/V s, current on/off ratios of >10{sup 7}, and external quantum efficiency of 10{sup −2}% at 2100 cd/m{sup 2}. These combined optical and electrical performance exceed those reported to date for HLETs. Furthermore, we provide full analysis of charge injection, charge transport, and recombination mechanism of the HLETs. The high brightness coupled with a high on/off ratio and low-cost solution processing makes this type of hybrid device attractive from a manufacturing perspective.

  15. Fabrication of the CALDER light detectors

    Science.gov (United States)

    Colantoni, I.; Bellini, F.; Cardani, L.; Casali, N.; Castellano, M. G.; Coppolecchia, A.; Cosmelli, C.; Cruciani, A.; D`Addabbo, A.; Di Domizio, S.; Martinez, M.; Tomei, C.; Vignati, M.

    2016-07-01

    CALDER (Cryogenic wide-Area Light Detectors with Excellent Resolution) is a project for the development of large area phonon mediated KIDs (Kinetic Inductance Detectors), for the detection of Cherenkov radiation emitted in TeO2 bolometers to search for neutrinoless double beta decay (0 νββ). The KIDs are superconducting detectors made of high quality factor superconducting resonators, which are coupled to a transmission line for signal readout. We designed and fabricated KIDs using aluminum. The Al thin films (40 nm) were evaporated on Si(100) high resistivity silicon wafers using an electron beam evaporator in a HV chamber. In this work we report the steps of the fabrication process. All devices are made in direct-write using Electron Beam Lithography (EBL), positive tone resist poly-methyl methacrylate (PMMA) and lift off process. In order to improve the sensitivity of the detectors we have started recently to use sub-stoichiometric TiN deposited by means of DC magnetron sputtering and we will optimize a different fabrication process.

  16. White organic light-emitting devices with mixed interfaces between light emitting layers

    Science.gov (United States)

    Lee, Young Gu; Kee, In Seo; Shim, Hong Shik; Ko, Ick Hwan; Lee, Soonil; Koh, Ken Ha

    2007-06-01

    White organic light-emitting devices with mixed interfaces between emitting layers (MI-EML WOLEDs) showed luminance and efficiency as large as 26213cd/m2 and 9.85cd/A. Efficiencies of MI-EML WOLEDs were about 1.5 times better than those of conventional three-EML WOLEDs for luminance of 1000-5000cd/m2, and their half-decay lifetime showed 3.1 times improvement. Note that if the authors operate typical active-matrix mobile-phone displays based on combination of WOLED and color filters to produce standard white emission for high definition televisions and illumination sources, MI-EML WOLEDs will have advantages of 25% less power consumption and 2.8 times longer lifetime over conventional three-EML WOLEDs.

  17. Patternless light outcoupling enhancement method for top-emission organic light-emitting diodes

    Science.gov (United States)

    Kim, Doo-Hoon; Lee, Ho-Nyeon

    2016-11-01

    An increase of 65% in the luminous flux of a top-emission organic light-emitting diode (TE-OLED) was obtained by fabricating a stacked N,N‧-bis(naphthalen-1-yl)-N,N‧-bis(phenyl)benzidine (NPB) (0.2 µm)/CaF2 (2.5 µm) light outcoupling layer on the TE-OLED. The high-refractive-index NPB layer extracted the trapped light energy in the TE-OLED for input into the light outcoupling layer and protected the top cathode of the TE-OLED from damage due to the CaF2 layer. The surface morphology of the CaF2 layer had an irregular shape consisting of randomly dispersed pyramids; the irregular structure scattered the waveguide mode energy into air. By combining the effects of the NPB and CaF2 layers, the external quantum efficiency of the TE-OLED was increased significantly. The light outcoupling layer can be fabricated using a thermal evaporation process without patterning and, hence, provides a practical solution for the enhancement of TE-OLED light outcoupling using a patternless fabrication process.

  18. Manipulating the local light emission in organic light-emitting diodes by using patterned self-assembled monolayers

    NARCIS (Netherlands)

    Mathijssen, Simon G. J.; van Hal, Paul A.; van den Biggelaar, Ton J. M.; Smits, Edsger C. P.; de Boer, Bert; Kemerink, Martijn; Janssen, Rene A. J.; de Leeuw, Dago M.

    2008-01-01

    Patterned organic light-emitting diodes are fabricated by using microcontactDrinted self-assembled monolayers on a gold anode (see background figure). Molecules with dipole moments in opposite directions result in an increase or a decrease of the local work function (foreground picture), providing a

  19. Synthesis and optical properties of cadmium selenide quantum dots for white light-emitting diode application

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Xianmei; Wang, Yilin; Gule, Teri; Luo, Qiang [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China); Zhou, Liya, E-mail: zhouliyatf@163.com [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China); Gong, Fuzhong [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China)

    2013-03-15

    Highlights: ► Stable CdSe QDs were synthesized by the one-step and two-level process respectively. ► The fabricated white LEDs show good white balance. ► CdSe QDs present well green to yellow band luminescence. ► CdSe QDs displayed a broad excitation band. - Abstract: Yellow light-emitting cadmium selenide quantum dots were synthesized using one-step and two-step methods in an aqueous medium. The structural luminescent properties of these quantum dots were investigated. The obtained cadmium selenide quantum dots displayed a broad excitation band suitable for blue or near-ultraviolet light-emitting diode applications. White light-emitting diodes were fabricated by coating the cadmium selenide samples onto a 460 nm-emitting indium gallium nitrite chip. Both samples exhibited good white balance. Under a 20 mA working current, the white light-emitting diode fabricated via the one-step and two-step methods showed Commission Internationale de l’Éclairage coordinates at (0.27, 0.23) and (0.27, 0.33), respectively, and a color rendering index equal to 41 and 37, respectively. The one-step approach was simpler, greener, and more effective than the two-step approach. The one-step approach can be enhanced by combining cadmium selenide quantum dots with proper phosphors.

  20. Flexible bottom-emitting white organic light-emitting diodes with semitransparent Ni/Ag/Ni anode.

    Science.gov (United States)

    Koo, Ja-Ryong; Lee, Seok Jae; Lee, Ho Won; Lee, Dong Hyung; Yang, Hyung Jin; Kim, Woo Young; Kim, Young Kwan

    2013-05-01

    We fabricated a flexible bottom-emitting white organic light-emitting diode (BEWOLED) with a structure of PET/Ni/Ag/Ni (3/6/3 nm)/ NPB (50 nm)/mCP (10 nm)/7% FIrpic:mCP (10 nm)/3% Ir(pq)(2) acac:TPBi (5 nm)/7% FIrpic:TPBi (5 nm)/TPBi (10 nm)/Liq (2 nm)/ Al (100 nm). To improve the performance of the BEWOLED, a multilayered metal stack anode of Ni/Ag/Ni treated with oxygen plasma for 60 sec was introduced into the OLED devices. The Ni/Ag/Ni anode effectively enhanced the probability of hole-electron recombination due to an efficient hole injection into and charge balance in an emitting layer. By comparing with a reference WOLED using ITO on glass, it is verified that the flexible BEWOLED showed a similar or better electroluminescence (EL) performance.

  1. Silicon light-emitting diodes and lasers photon breeding devices using dressed photons

    CERN Document Server

    Ohtsu, Motoichi

    2016-01-01

    This book focuses on a novel phenomenon named photon breeding. It is applied to realizing light-emitting diodes and lasers made of indirect-transition-type silicon bulk crystals in which the light-emission principle is based on dressed photons. After presenting physical pictures of dressed photons and dressed-photon phonons, the principle of light emission by using dressed-photon phonons is reviewed. A novel phenomenon named photon breeding is also reviewed. Next, the fabrication and operation of light emitting diodes and lasers are described The role of coherent phonons in these devices is discussed. Finally, light-emitting diodes using other relevant crystals are described and other relevant devices are also reviewed.

  2. Towards fully spray coated organic light emitting devices

    OpenAIRE

    GILISSEN, Koen; STRYCKERS, Jeroen; Manca, Jean; DEFERME, Wim

    2014-01-01

    Pi-conjugated polymer light emitting devices have the potential to be the next generation of solid state lighting. In order to achieve this goal, a low cost, efficient and large area production process is essential. Polymer based light emitting devices are generally deposited using techniques based on solution processing e.g.: spin coating, ink jet printing. These techniques are not well suited for cost-effective, high throughput, large area mass production of these organic devices. Ultrasoni...

  3. InGaN/GaN多量子阱纳米线发光二极管制备及研究%Fabrication and Investigation of InGaN/GaN Multi-quantum-well Nanowire Light Emitting Diode

    Institute of Scientific and Technical Information of China (English)

    曹瑞华; 殷垚; 陈鹏; 万青; 濮林; 施毅; 郑有炓

    2011-01-01

    InGaN/GaN multi-quantum-well (MQW) nanowires and accordingly light-emitting-diodes (LEDs) were fabricated on n-GaN/sapphire substrate with a nano-patterned SiO2 film as growth mask. Field-emission scan electron microscopy (FESEM), cathodoluminescence (CL) and Ⅰ-Ⅴ measurements were used to investigate the structural characteristics, optical and electrical properties. The observed results show that InGaN/GaN MQW nanowire has smooth surface morphologies and triangular cross sectional structure. A strong CL emission peak centered at around 461 nm shifts to high energy compared to the one from the sample with film MQW structure. In addition, InGaN/GaN MQW nanowire LED shows typical p-n junction characteristics with a turn-on voltage of 4.28 V at the 20 mA operation current, and its electroluminescence displays purplish compared to the green luminescence of MQW LED.%用SiO2纳米图形层作为模板在以蓝宝石为衬底的n-GaN单晶层上制备了InGaN/GaN多量子阱纳米线,并成功实现了其发光二极管器件(LED).场发射扫描电子显微镜(FESEM)的测量结果表明,InGaN/GaN多量子阱纳米线具有光滑的表面形貌和三角形的剖面结构.室温下阴极射线荧光谱(CL)的测试发现了位于461 nm处的强发光峰,其峰位与多量子阱薄膜相比发生了明显的蓝移.I-V 测量表明,多量子阱纳米线LED具有典型的p-n结伏安特性,在20 mA注入电流下,开启电压为4.28 V,且与多量子阱LED的绿色发光相比,其电致发光偏紫色.

  4. Substrate patterning for passive matrix organic light-emitting devices by photolithography processing

    Science.gov (United States)

    Wang, Jun; Yu, Jun-sheng; Lin, Hui; Lou, Shuang-ling; Jiang, Ya-dong

    2007-12-01

    The fabrication technology of high resolution substrate pattern for organic light-emitting devices (OLEDs) was discussed in the paper. Surface morphology and crystallization properties of ITO films and the shape of photolithography pattern were investigated. Experimental results show that three factors including deposition pressure, flow ratio of argon to oxygen and annealing temperature greatly influence the conductance of ITO film.. Some attempts about designing photomask were enumerated and the reverse taper angle separator was successfully fabricated with image reversal process.

  5. Engineering of Semiconductor Nanocrystals for Light Emitting Applications

    Directory of Open Access Journals (Sweden)

    Francesco Todescato

    2016-08-01

    Full Text Available Semiconductor nanocrystals are rapidly spreading into the display and lighting markets. Compared with liquid crystal and organic LED displays, nanocrystalline quantum dots (QDs provide highly saturated colors, wide color gamut, resolution, rapid response time, optical efficiency, durability and low cost. This remarkable progress has been made possible by the rapid advances in the synthesis of colloidal QDs and by the progress in understanding the intriguing new physics exhibited by these nanoparticles. In this review, we provide support to the idea that suitably engineered core/graded-shell QDs exhibit exceptionally favorable optical properties, photoluminescence and optical gain, while keeping the synthesis facile and producing QDs well suited for light emitting applications. Solid-state laser emitters can greatly profit from QDs as efficient gain materials. Progress towards fabricating low threshold, solution processed DFB lasers that are optically pumped using one- and two-photon absorption is reviewed. In the field of display technologies, the exploitation of the exceptional photoluminescence properties of QDs for LCD backlighting has already advanced to commercial levels. The next big challenge is to develop the electroluminescence properties of QD to a similar state. We present an overview of QLED devices and of the great perspectives for next generation display and lighting technologies.

  6. Emerging Transparent Conducting Electrodes for Organic Light Emitting Diodes

    Directory of Open Access Journals (Sweden)

    Tze-Bin Song

    2014-03-01

    Full Text Available Organic light emitting diodes (OLEDs have attracted much attention in recent years as next generation lighting and displays, due to their many advantages, including superb performance, mechanical flexibility, ease of fabrication, chemical versatility, etc. In order to fully realize the highly flexible features, reduce the cost and further improve the performance of OLED devices, replacing the conventional indium tin oxide with better alternative transparent conducting electrodes (TCEs is a crucial step. In this review, we focus on the emerging alternative TCE materials for OLED applications, including carbon nanotubes (CNTs, metallic nanowires, conductive polymers and graphene. These materials are selected, because they have been applied as transparent electrodes for OLED devices and achieved reasonably good performance or even higher device performance than that of indium tin oxide (ITO glass. Various electrode modification techniques and their effects on the device performance are presented. The effects of new TCEs on light extraction, device performance and reliability are discussed. Highly flexible, stretchable and efficient OLED devices are achieved based on these alternative TCEs. These results are summarized for each material. The advantages and current challenges of these TCE materials are also identified.

  7. White-Light Electroluminescence with Tetraphenylethylene as Emitting Layer of Aggregation-Induced Emissions Enhancement

    Institute of Scientific and Technical Information of China (English)

    罗建芳; 王晓宏; 王筱梅; 苏文明; 陶绪堂; 陈志刚

    2012-01-01

    Tetraphenylethylene (TPE) based molecules with easy synthesis, good thermal stability, and especially their aggregation-induced emissions enhancement (AIEE) effect recently become attractive organic emitting materials due to their potentially practical application in OLEDs. Herein, the AIEE behaviors of tetraphenylethylene dyes (TMTPE and TBTPE) were investigated. Fabricated luminesent device using TMTPE dye as emitting layer displays two strong emitting bands: the blue emission coming from the first-step aggregation and the yellow emission attrib- uted to the second-step aggregation. Thus, it can be utilized to fabricate the white-light OLEDs (WOLEDs) of the single-emitting-component. A three-layer device with the brightness of 1200 cd·m^-2 and current efficiency of 0.78 cd·A^-1 emits the close to white light with the CIE coordinates of x=0.333 and y=0.358, when applied voltage from 8-13 V, verifying that the TPE-based dyes of AIEE effect can be effectively applied in single-emitting- component WOLEDs fabrication.

  8. Optimization of light quality from color mixing light-emitting diode systems for general lighting

    DEFF Research Database (Denmark)

    Thorseth, Anders

    2012-01-01

    To address the problem of spectral light quality from color mixing light-emitting diode systems, a method for optimizing the spectral output of multicolor LED system with regards to standardized quality parameters has been developed. The composite spectral power distribution from the LEDs...... boundaries mapping the capabilities of the simulated lighting system....

  9. White organic light-emitting devices using Zn(BTZ)2 doped with Rubrene as emitting layer

    Institute of Scientific and Technical Information of China (English)

    ZHENG Jiajin; HUA Yulin; YIN Shougen; FENG Xiulan; WU Xiaoming; SUN Yuanyuan; LI Yongfang; YANG Chunhe; SHUAI Zhigang

    2005-01-01

    Zn(BTZ)2 was synthesized from the complex reaction between zinc acetate dihydrate and 2-(2- hydroxyphenyl) benzothiazolate. Then Zn(BTZ)2 was used as main light-emitting material doped with different amounts of fluorescent dye Rubrene and fabricated a series of white organic light emitting devices. The configurations were as follows: ITO/PVK:TPD/Zn(BTZ)2:Rubrene/Al. The doping concentration of Rubrene in Zn(BTZ)2 was 1.2%, 0.12%, 0.08% and 0.05%, respectively. According to the EL spectra and CIE coordinates of the above devices, the optimum doping concentration (0.05%, weight percent) had been determined. The steady and bright white light emitting of the device with 0.05% doping concentration had been obtained, and the white emission covered a wide range of driving voltage (10-22.5 V). The CIE coordinates were (x=0.341, y=0.334) at the driving voltage of 20 V, which was very close to the equi-energy point (x=0.333, y=0.333), and the corresponding luminance and external quantum efficiency were 4048 Cd/m2 and 0.63% (4.05 Cd/A), respectively. Lastly, we also discussed the emitting mechanisms of the material and the devices.

  10. Device Physics of White Polymer Light-Emitting Diodes

    NARCIS (Netherlands)

    Nicolai, Herman T.; Hof, Andre; Blom, Paul W. M.

    2012-01-01

    The charge transport and recombination in white-emitting polymer light- emitting diodes (PLEDs) are studied. The PLED investigated has a single emissive layer consisting of a copolymer in which a green and red dye are incorporated in a blue backbone. From single-carrier devices the effect of the gre

  11. Very low color-temperature organic light-emitting diodes for lighting at night

    Science.gov (United States)

    Jou, Jwo-Huei; Tang, Ming-Chun; Chen, Pin-Chu; Chen, Szu-Hao; Shen, Shih-Ming; Chen, Chien-Chih; Wang, Ching-Chiun; Chen, Chien-Tien

    2011-12-01

    Light sources with low color temperature (CT) are essential for their markedly less suppression effect on the secretion of melatonin, and high power efficiency is crucial for energy-saving. To provide visual comfort, the light source should also have a reasonably high color rendering index (CRI). In this report, we demonstrate the design and fabrication of low CT and high efficiency organic light-emitting diodes. The best resultant device exhibits a CT of 1,880 K, much lower than that of incandescent bulbs (2,000-2,500 K) and even as low as that of candles, (1,800-2,000 K), a beyond theoretical limit external quantum efficiency 22.7 %, and 36.0 lm/W at 100 cd/m 2. The high efficiency of the proposed device may be attributed to its interlayer, which helps effectively distribute the entering carriers into the available recombination zones.

  12. Surface Plasmon Enhanced Phosphorescent Organic Light Emitting Diodes

    Energy Technology Data Exchange (ETDEWEB)

    Guillermo Bazan; Alexander Mikhailovsky

    2008-08-01

    The objective of the proposed work was to develop the fundamental understanding and practical techniques for enhancement of Phosphorescent Organic Light Emitting Diodes (PhOLEDs) performance by utilizing radiative decay control technology. Briefly, the main technical goal is the acceleration of radiative recombination rate in organometallic triplet emitters by using the interaction with surface plasmon resonances in noble metal nanostructures. Increased photonic output will enable one to eliminate constraints imposed on PhOLED efficiency by triplet-triplet annihilation, triplet-polaron annihilation, and saturation of chromophores with long radiative decay times. Surface plasmon enhanced (SPE) PhOLEDs will operate more efficiently at high injection current densities and will be less prone to degradation mechanisms. Additionally, introduction of metal nanostructures into PhOLEDs may improve their performance due to the improvement of the charge transport through organic layers via multiple possible mechanisms ('electrical bridging' effects, doping-like phenomena, etc.). SPE PhOLED technology is particularly beneficial for solution-fabricated electrophosphorescent devices. Small transition moment of triplet emitters allows achieving a significant enhancement of the emission rate while keeping undesirable quenching processes introduced by the metal nanostructures at a reasonably low level. Plasmonic structures can be introduced easily into solution-fabricated PhOLEDs by blending and spin coating techniques and can be used for enhancement of performance in existing device architectures. This constitutes a significant benefit for a large scale fabrication of PhOLEDs, e.g. by roll-to-roll fabrication techniques. Besides multieexciton annihilation, the power efficacy of PhOLEDs is often limited by high operational bias voltages required for overcoming built-in potential barriers to injection and transport of electrical charges through a device. This problem is

  13. Selective-area nanoheteroepitaxy for light emitting diode (LED) applications

    Science.gov (United States)

    Wildeson, Isaac H.

    Over 20% of the electricity in the United States is consumed for lighting, and the majority of this energy is wasted as heat during the lighting process. A solid-state (or light emitting diode (LED)-based) light source has the potential of saving the United States billions of dollars in electricity and reducing megatons of global CO2 emissions annually. While white light LEDs are currently on the market with efficiencies that are superior to incandescent and fluorescent light sources, their high up-front cost is inhibiting mass adoption. One reason for the high cost is the inefficiency of green and amber LEDs that can used to make white light. The inefficiency of green and amber LEDs results in more of these chips being required, and thus a higher cost. Improvements in the performance of green and amber LEDs is also required in order to realize the full potential of solid-state lighting. Nanoheteroepitaxy is an interesting route towards achieving efficient green and amber LEDs as it resolves major challenges that are currently plaguing III-nitride LEDs such as high dislocation densities and limited active region critical thicknesses. A method for fabricating III-nitride nanopyramid LEDs is presented that employs conventional processing used in industry. The present document begins with an overview of the current challenges in III-nitride LEDs and the benefits of nanoheteroepitaxy. A process for controlled selective-area growth of nanopyramid LEDs by organometallic vapor phase epitaxy has been developed throughout the course of this work. Dielectric templates used for the selective-area growth are patterned by two methods, namely porous anodic alumina and electron-beam lithography. The dielectric templates serve as efficient dislocation filters; however, planar defects are initiated during lower temperature growth on the nanopyramids. The quantum wells outline six semipolar planes that form each hexagonal pyramid. Quantum wells grown on these semipolar planes

  14. Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Lee-Woon; Jeon, Dae-Woo [School of Advanced Materials Engineering and Research Center for Advanced Materials Development, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Polyakov, A.Y.; Govorkov, A.V. [Institute of Rare Metals, B. Tolmachevsky, 5, Moscow 119017 (Russian Federation); Sokolov, V.N. [Department of Engineering and Ecological Geology, Moscow State University, Vorobyovygory, Moscow 119991 (Russian Federation); Smirnov, N.B. [Institute of Rare Metals, B. Tolmachevsky, 5, Moscow 119017 (Russian Federation); Cho, Han-Su; Yun, Jin-Hyeon [School of Advanced Materials Engineering and Research Center for Advanced Materials Development, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Shcherbatchev, K.D. [National University of Science and Technology MISiS, Leninsky Ave. 4, Moscow 119049 (Russian Federation); Baek, Jong-Hyeob [LED R and D Division, Korea Photonics Technology Institute, Gwangju 500-779 (Korea, Republic of); Lee, In-Hwan, E-mail: ihlee@jbnu.ac.kr [School of Advanced Materials Engineering and Research Center for Advanced Materials Development, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

    2014-03-15

    Highlights: • Porous GaN template was prepared by electrochemical and photoelectrochemical etching scheme. • InGaN/GaN light-emitting diode (LED) structure was overgrown on the etched GaN template. • Overgrown GaN films and LEDs showed lower strain and lower density of surface defects. • The overgrown LED structures showed enhanced electroluminescence efficiency. -- Abstract: Porous GaN templates were prepared by combined electrochemical etching (ECE) and back-side photoelectrochemical etching (PECE), followed by the overgrowth of GaN films and InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) structures. Structural, luminescent, and electrical properties of the GaN and LED structures were studied and compared with the properties of structures grown under the same conditions on templates not subjected to ECE–PECE treatment. Overgrowth of LED structures on the ECE–PECE templates reduced strain, cracking, and micropits, leading to increased internal quantum efficiency and light extraction efficiency. This luminescence enhancement was observed in overgrown GaN films, but was more pronounced for InGaN/GaN LED structures due to suppression of piezoelectric polarization field in QWs.

  15. Organic light emitting diode with surface modification layer

    Energy Technology Data Exchange (ETDEWEB)

    Basil, John D.; Bhandari, Abhinav; Buhay, Harry; Arbab, Mehran; Marietti, Gary J.

    2017-09-12

    An organic light emitting diode (10) includes a substrate (12) having a first surface (14) and a second surface (16), a first electrode (32), and a second electrode (38). An emissive layer (36) is located between the first electrode (32) and the second electrode (38). The organic light emitting diode (10) further includes a surface modification layer (18). The surface modification layer (18) includes a non-planar surface (30, 52).

  16. White Light Emitting Diode Development for General Illumination Applications

    Energy Technology Data Exchange (ETDEWEB)

    James Ibbetson

    2006-05-01

    This report contains a summary of technical achievements during a 3-year project aimed at developing the chip and packaging technology necessary to demonstrate efficient, high flux light-emitting diode (LED) arrays using Cree's gallium nitride/silicon carbide (GaN/SiC) LED technology as the starting point. Novel chip designs and fabrication processes are described that led to high power blue LEDs that achieved 310 mW of light output at 350 mA drive current, corresponding to quantum and wall plug efficiencies of 32.5% and 26.5%, respectively. When combined with phosphor, high power white LEDs with luminous output of 67 lumens and efficacy of 57 lumens per watt were also demonstrated. Advances in packaging technology are described that enabled compact, multi-chip white LED lamp modules with 800-1000 lumens output at efficacies of up to 55 lumens per watt. Lamp modules with junction-to-ambient thermal resistance as low as 1.7 C/watt have also been demonstrated.

  17. Enhanced Emission Efficiency of Size-Controlled InGaN/GaN Green Nanopillar Light-Emitting Diodes

    DEFF Research Database (Denmark)

    Ou, Yiyu; Iida, Daisuke; Fadil, Ahmed

    2016-01-01

    Nanopillar InGaN/GaN green light-emitting diode (LED) arrays were fabricated by self-assembled Au nanoparticles patterning and dry etching process. Structure size and density of the nanopillar arrays have been modified by varying the Au film thickness in the nanopatterning process. Fabricated...

  18. Tailor-made directional emission in nanoimprinted plasmonic-based light-emitting devices

    Science.gov (United States)

    Lozano, G.; Grzela, G.; Verschuuren, M. A.; Ramezani, M.; Rivas, J. Gómez

    2014-07-01

    We demonstrate an enhanced and tailor-made directional emission of light-emitting devices using nanoimprinted hexagonal arrays of aluminum nanoparticles. Fourier microscopy reveals that the luminescence of the device is not only determined by the material properties of the organic dye molecules but is also strongly influenced by the coherent scattering resulting from periodically arranged metal nanoparticles. Emitters can couple to lattice-induced hybrid plasmonic-photonic modes sustained by plasmonic arrays. Such modes enhance the spatial coherence of an emitting layer, allowing the efficient beaming of the emission along narrow angular and spectral ranges. We show that tailoring the separation of the nanoparticles in the array yields an accurate angular distribution of the emission. This combination of large-area metal nanostructures fabricated by nanoimprint lithography and light-emitting devices is beneficial for the design and optimization of solid-state lighting systems.

  19. Light emitting devices based on Si nanoclusters: the integration with a photonic crystal and electroluminescence properties

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    We present the properties and potentialities of light emitting devices based on amorphous Si nanoclusters. Amorphous nanostructures may constitute an interesting alternative to Si nanocrystals for the monolithic integration of optical and electrical functions in Si technology. In fact, they exhibit an intense room temperature electroluminescence (EL). The EL properties of these devices have been studied as a function of current and of temperature. Moreover, to improve the extraction efficiency of the light, we have integrated the emitting system with a 2D photonic crystal structure opportunely fabricated by using conventional optical lithography to reduce the total internal reflection of the emitted light. The extraction efficiency in such devices increases by a factor of 4 at a resonance wavelength.

  20. Light-emitting diode technology in vitreoretinal surgery.

    Science.gov (United States)

    Dithmar, Stefan; Hoeh, Alexandra E; Amberger, Roman; Ruppenstein, Mira; Ach, Thomas

    2011-05-01

    Systems for vitreoretinal illumination during surgery usually consist of an external light source and a light fiber. We introduce a new illumination system for vitreoretinal surgery based on the light-emitting diode technology, with an embedded light source in the handle of the light fiber, making a separate light source unnecessary. A prototype of a new illumination system for vitreoretinal surgery (ocuLED; Geuder, Heidelberg, Germany) was tested. This system consists of a handle with a built-in light-emitting diode, supported by an external power source. The OcuLED was analyzed in regards to wavelength, maximum radiant power, and maximum irradiance and was compared with three commercially available vitreoretinal illumination systems. Furthermore, the first intraoperative application and handling were evaluated. The ocuLED system works with a cool white or a neutral white light-emitting diode and is powered externally. The wavelength spectrum shows a maximum at 565 nm and a second peak at 455 nm. Compared with other light sources, the proportion of potentially harmful blue light is low. Maximum radiant power and irradiance are in line with xenon and mercury vapor light sources. The intrasurgical light is bright and offers good visibility. The handle of ocuLED is slightly wider than commonly used light fiber handles, which do not affect its use during surgery. Technical progress in light-emitting diode technology allows minimizing the equipment for vitreoretinal illumination. The OcuLED provides bright illumination without an external light source. Wavelength spectrum, maximum radiant power, and irradiance are safe from the risk of phototoxic damage. Intrasurgical handling is identical to conventional light fibers.

  1. A novel orange phosphor of Eu 2+-activated calcium chlorosilicate for white light-emitting diodes

    Science.gov (United States)

    Ding, Weijia; Wang, Jing; Zhang, Mei; Zhang, Qiuhong; Su, Qiang

    2006-11-01

    Novel orange phosphor of Eu 2+-activated calcium chlorosilicate was synthesized at 1273 K by conventional solid-state reactions under reductive atmosphere and investigated by means of photoluminescence excitation, diffuse reflectance and emission spectroscopies. These results show that this phosphor can be efficiently excited by the incident light of 300-450 nm, well matched with the emission band of 395 nm-emitting InGaN chip, and emits an intense orange light peaking at 585 nm. By combining this phosphor with a 395 nm-emitting InGaN chip, an intense orange light-emitting diode (LED) was fabricated. Under 20 mA forward-bias current, its CIE chromaticity coordinates are (0.486, 0.446). The dependence of as-fabricated orange LED on forward-bias current indicates that it shows excellent chromaticity stability and luminance saturation. These results show that this Eu 2+-activated calcium chlorosilicate is a promising orange-emitting phosphor for near-ultraviolet (UV) InGaN-based white LED.

  2. Very-High Color Rendering Index Hybrid White Organic Light-Emitting Diodes with Double Emitting Nanolayers

    Institute of Scientific and Technical Information of China (English)

    Baiquan Liu; Miao Xu; Lei Wang; Hong Tao; Yueju Su; Dongyu Gao; Linfeng Lan; Jianhua Zou; Junbiao Peng

    2014-01-01

    A very-high color rendering index white organic light-emitting diode (WOLED) based on a simple structure was successfully fabricated. The optimized device exhibits a maximum total efficiency of 13.1 and 5.4 lm/W at 1,000 cd/m2. A peak color rendering index of 90 and a relatively stable color during a wide range of luminance were obtained. In addition, it was demonstrated that the 4,40,40-tri(9-carbazoyl) triphenylamine host influenced strongly the performance of this WOLED. These results may be beneficial to the design of both material and device architecture for high-performance WOLED.

  3. Candlelight style organic light-emitting diode: a plausibly human-friendly safe night light

    Science.gov (United States)

    Jou, Jwo-Huei; Hsieh, Chun-Yu; Chen, Po-Wei; Kumar, Sudhir; Hong, James H.

    2014-01-01

    Candles emit sensationally warm light with a very low color temperature, comparatively most suitable for use at night. In response to the need for such a human-friendly night light, we demonstrate the employment of a high number of candlelight complementary organic emitters to generate and mimic candlelight based on organic light emitting diode (OLED). One resultant candlelight style OLED shows a very-high color rendering index (CRI), with an efficacy at least 300 times that of a candle or at least two times that of an incandescent bulb. The device can be fabricated, for example, by using four candlelight complementary emitters: red, yellow, green, and sky-blue phosphorescent dyes. These dyes, in the present system, can be vacuum deposited into two emission layers that are separated by a nanolayer of carrier modulation material that is used to maximize very high CRI and energy efficiency. A nano carrier modulation layer also played a significant role in maintaining the low blue emission and high-red emission, the low color temperature of device was obtained. Importantly, a romantic sensation giving and supposedly physiologically friendly candlelight style emission can hence be driven by electricity in lieu of hydrocarbon burning and greenhouse gas-releasing candles that were invented 5000 years ago.

  4. Resonant-cavity based monolithic white light-emitting diode

    Science.gov (United States)

    Huang, Lirong; Huang, Dexiu; Wen, Feng

    2007-11-01

    We propose a new scheme of resonant-cavity (RC) based monolithic white LED, it relaxes the hard requirement of high internal quantum efficiency of yellow multi-quantum (MQW) and offers an easy way to obtain high luminous efficacy white light emission. In the proposed white LED, the blue MQW and yellow MQW active layer are embedded in a resonant-cavity defined by the bottom distributed Bragg reflector(DBR) and top DBR. For a optimal design of RC-based white LED, the extraction efficiency for yellow light is enhanced, while that for blue light is suppressed, thus intensity ratio of yellow light in the emitting light is increased, which not only helps to obtain white emission in spite of the low internal quantum efficiency of yellow light, but also doubles luminous efficacy. The color coordinates and luminous flux of the emitting light from RC-based white LED are calculated and the performance dependence on directionality is investigated.

  5. High extraction efficiency ultraviolet light-emitting diode

    Science.gov (United States)

    Wierer, Jonathan; Montano, Ines; Allerman, Andrew A.

    2015-11-24

    Ultraviolet light-emitting diodes with tailored AlGaN quantum wells can achieve high extraction efficiency. For efficient bottom light extraction, parallel polarized light is preferred, because it propagates predominately perpendicular to the QW plane and into the typical and more efficient light escape cones. This is favored over perpendicular polarized light that propagates along the QW plane which requires multiple, lossy bounces before extraction. The thickness and carrier density of AlGaN QW layers have a strong influence on the valence subband structure, and the resulting optical polarization and light extraction of ultraviolet light-emitting diodes. At Al>0.3, thinner QW layers (efficiently inject carriers in all the QWs, are preferred.

  6. Design of vertically-stacked polychromatic light-emitting diodes.

    Science.gov (United States)

    Hui, K N; Wang, X H; Li, Z L; Lai, P T; Choi, H W

    2009-06-01

    A new design for a polychromatic light-emitting diode (LED) is proposed and demonstrated. LED chips of the primary colors are physically stacked on top of each other. Light emitted from each layer of the stack passes through each other, and thus is mixed naturally without additional optics. As a color-tunable device, a wide range of colors can be generated, making it suitable for display purposes. As a phosphor-free white light LED, luminous efficacy of 30 lm/watt was achieved.

  7. Tuning the colour of white polymer light emitting diodes

    NARCIS (Netherlands)

    Kok, M.M. de; Sarfert, W.; Paetzold, R.

    2010-01-01

    Colour tuning of white polymer light emitting diode (LED) light sources can be attained by various methods at various stages in the production process of the lamps and/or by the design of the active material incorporated in the LEDs. In this contribution we will describe the methods and discuss the

  8. Tuning the colour of white polymer light emitting diodes

    NARCIS (Netherlands)

    Kok, M.M. de; Sarfert, W.; Paetzold, R.

    2010-01-01

    Colour tuning of white polymer light emitting diode (LED) light sources can be attained by various methods at various stages in the production process of the lamps and/or by the design of the active material incorporated in the LEDs. In this contribution we will describe the methods and discuss the

  9. Flip-chip light emitting diode with resonant optical microcavity

    Science.gov (United States)

    Gee, James M.; Bogart, Katherine H.A.; Fischer, Arthur J.

    2005-11-29

    A flip-chip light emitting diode with enhanced efficiency. The device structure employs a microcavity structure in a flip-chip configuration. The microcavity enhances the light emission in vertical modes, which are readily extracted from the device. Most of the rest of the light is emitted into waveguided lateral modes. Flip-chip configuration is advantageous for light emitting diodes (LEDs) grown on dielectric substrates (e.g., gallium nitride LEDs grown on sapphire substrates) in general due to better thermal dissipation and lower series resistance. Flip-chip configuration is advantageous for microcavity LEDs in particular because (a) one of the reflectors is a high-reflectivity metal ohmic contact that is already part of the flip-chip configuration, and (b) current conduction is only required through a single distributed Bragg reflector. Some of the waveguided lateral modes can also be extracted with angled sidewalls used for the interdigitated contacts in the flip-chip configuration.

  10. Optimized Performances of Thick Film Organic Lighting-Emitting Diodes

    Institute of Scientific and Technical Information of China (English)

    WANG Xiu-Ru; ZHANG Zhi-Qiang; MA Dong-Ge; SUN Run-Guang

    2008-01-01

    @@ The performance of organic light-emitting diodes (OLEDs) with thick film is optimized.The alternative vana-dium oxide (V2O5) and N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB) layers are used to enhance holes in the emissive region, and 4,7-dipheny-1,10-phenanthroline (Bphen) doped 8-tris-hydroxyquinoline alu-minium (Alq3) is used to enhance electrons is the emissive region, thus ITO/V2O5 (8nm)/NPB (52nm)/V2O5 (8nm)/NPB (52 nm)/Alq3 (30 and 45 nm)/Alq3:Bphen (30wt%, 30 and 45 nm)/LiF (1 nm)/Al (120nm) devices are fabricated.The thick-film devices show the turn-on voltage of about 3 V and the maximal power efficiency of 4.51m/W, which is 1.46 times higher than the conventional thin-film OLEDs.

  11. Light extraction enhancement from organic light-emitting diodes with randomly scattered surface fixture

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Dong-Ying; Shi, Xiao-Bo; Gao, Chun-Hong; Cai, Shi-Duan; Jin, Yue; Liao, Liang-Sheng, E-mail: lsliao@suda.edu.cn

    2014-09-30

    Graphical abstract: - Highlights: • A combination of scattering layer and roughened substrate is used for light extraction from OLEDs. • The scattering layer is readily achieved by spin-coating the TiO{sub 2} sol. • The enhancement relying scattering depends on the size of TiO{sub 2} nano particles. • With the light extraction techniques the uniform emission is achieved. - Abstract: A combination of a scattering medium layer and a roughened substrate was proposed to enhance the light extraction efficiency of organic light-emitting diodes (OLEDs). Comparing with a reference OLED without any scattering layer, 65% improvement in the forward emission has been achieved with a scattering layer formed on an intentionally roughened external substrate surface of the OLED by spin-coating a sol–gel fabricated matrix containing well dispersed titania (TiO{sub 2}) particles. Such a combination method not only demonstrated efficient extraction of the light trapped in the glass substrate but also achieved homogenous emission from the OLED panel. The proposed technique, convenient and inexpensive, is believed to be suitable for the large area OLED production in lighting applications.

  12. Frequency Response of Modulated Electroluminescence of Light-Emitting Diodes

    Institute of Scientific and Technical Information of China (English)

    FENG Lie-Feng; LI Yang; LI Ding; WANG Cun-Da; ZHANG Guo-Yi; YAO Dong-Sheng; LIU Wei-Fang; XING Peng-Fei

    2011-01-01

    Frequency responses of modulated electroluminescence (EL) of light-emitting diodes were measured using a testing setup.With increasing frequency of the ac signal,the relative light intensity (RLI) clearly decreases.Furthermore,a peculiar asynchrony between the RLI and ac small-signal is observed.At frequencies higher than 10kHz,the RLI clearly lags behind the ac signal and the absolute value of the lagging angle is nearly proportional to the signal frequency.Using the classical recombination model of light-emitting diodes under ac small-signal modulation,these abnormal characteristics of modulated EL can be clearly explained.High-power light-emitting diodes (LEDs) have received great attention recently owing to their applications in energy-saving lights,display items and many other fields;therefore,the optical and electrical characteristics of LEDs at forward bias hold significant potential for research.[1-4] However,for a new kind of light emission device,the general research on its performance focuses on the light emission and dc currentvoltage (I-V) characteristics.%Frequency responses of modulated electroluminescence (EL) of light-emitting diodes were measured using a testing setup. With increasing frequency of the ac signal, the relative light intensity (RLI) clearly decreases. Furthermore, a peculiar asynchrony between the RLI and ac small-signal is observed. At frequencies higher than 10kHz, the RLI clearly lags behind the ac signal and the absolute value of the lagging angle is nearly proportional to the signal frequency. Using the classical recombination model of light-emitting diodes under ac small-signal modulation, these abnormal characteristics of modulated EL can be clearly explained.

  13. Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control

    KAUST Repository

    Sun, Liangfeng

    2012-05-06

    Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr \\'1 m \\'2) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH 2 groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.© 2012 Macmillan Publishers Limited.

  14. Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control.

    Science.gov (United States)

    Sun, Liangfeng; Choi, Joshua J; Stachnik, David; Bartnik, Adam C; Hyun, Byung-Ryool; Malliaras, George G; Hanrath, Tobias; Wise, Frank W

    2012-05-06

    Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr(-1) m(-2)) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH(2) groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.

  15. Selective scattering polymer dispersed liquid crystal film for light enhancement of organic light emitting diode.

    Science.gov (United States)

    Jiang, Jinghua; McGraw, Greg; Ma, Ruiqing; Brown, Julie; Yang, Deng-Ke

    2017-02-20

    We developed a novel light enhancing film for an organic light emitting diode (OLED) based on polymer dispersed liquid crystal (PDLC). In the film, the liquid crystal droplets are unidirectionally aligned along the film normal direction and exhibit selective scattering. The film scatters light emitted only in directions with large incident angles but not light emitted in directions with small incident angles. When the light is scattered, it changes propagation direction and exits the OLED. The PDLC film reduces the total internal reflection and thus can significantly increase the light efficiency of the OLED.

  16. Light-Emitting Diodes in the Solid-State Lighting Systems

    CERN Document Server

    Sparavigna, Amelia Carolina

    2014-01-01

    Red and green light-emitting diodes (LEDs) had been produced for several decades before blue emitting diodes, suitable for lighting applications, were widely available. Today, we have the possibility of combining the three fundamental colours to have a bright white light. And therefore, a new form of lighting, the solid-state lighting, has now become a reality. Here we discuss LEDs and some of their applications in displays and lamps.

  17. Growth and properties of wide spectral white light emitting diodes

    Institute of Scientific and Technical Information of China (English)

    Xie Zi-Li; Shi Yi; Zheng You-Dou; Zhang Rong; Fu De-Yi; Liu Bin; Xiu Xiang-Qian; Hua Xue-Mei; Zhao Hong; Chen Peng; Han Ping

    2011-01-01

    Wide spectral white light emitting diodes have been designed and grown on a sapphire substrate by using a metal-organic chemical vapor deposition system.Three quantum wells with blue-light-emitting,green-light-emitting and red-light-emitting structures were grown according to the design.The surface morphology of the film was observed by using atomic force microscopy. The films were characterized by their photoluminescence measurements. X-ray diffraction θ/2θ scan spectroscopy was carried out on the multi-quantum wells.The secondary fringes of the symmetric ω/2θ X-ray diffraction scan peaks indicate that the thicknesses and the alloy compositions of the individual quantum wells are repeatable throughout the active region.The room temperature photolumineecence spectra of the structures indicate that the white light emission of the multi-quantum wells is obtained.The light spectrum covers 400-700 nm,which is almost the whole visible light spectrum.

  18. Organic light emitting diodes with structured electrodes

    Science.gov (United States)

    Mao, Samuel S.; Liu, Gao; Johnson, Stephen G.

    2012-12-04

    A cathode that contain nanostructures that extend into the organic layer of an OLED has been described. The cathode can have an array of nanotubes or a layer of nanoclusters extending out from its surface. In another arrangement, the cathode is patterned and etched to form protruding nanostructures using a standard lithographic process. Various methods for fabricating these structures are provided, all of which are compatible with large-scale manufacturing. OLEDs made with these novel electrodes have greatly enhanced electron injection, have good environmental stability.

  19. Experimental investigations into the physics of light emitting conjugated polymers

    CERN Document Server

    Whitelegg, S A

    2001-01-01

    chloroprecursor MEH-PPV in-situ of ITO results in a reaction of the polymer with ITO, which significantly shift the emission to high energies. Electroabsorption spectroscopy is used to probe the internal electric fields within operating polymer light emitting devices. When a PPV based LED in an oxygen/water atmosphere, degradation of the device occurs whereby an electric field develops, which opposes the applied electric field. This opposing electric field subsequently decays when the device is turned to its off state. Operating lifetimes and emission efficiencies of polymer light emitting devices are now approaching values suitable for the manufacture and sale of polymer light emitting based products. However, degradation and device performance still continues to be of chief concern and in order for these to be improved the underlying physical processes have to be identified. This thesis aims to identify some of these processes. An investigation in to the optical absorption and emission properties of insolub...

  20. Light-emitting diodes - Their potential in biomedical applications

    Energy Technology Data Exchange (ETDEWEB)

    Yeh, Naichia Gary; Wu, Chia-Hao [College of Applied Sciences, MingDao University, 369 Wen-Hua Road, Peetou, Changhua 52345 (China); Cheng, Ta Chih [Department of Tropical Agriculture and International Cooperation, National Pingtung University of Science and Technology, 1 Hseuh-Fu Rd., Nei-Pu Hsiang, Pingtung 91201 (China)

    2010-10-15

    The rapid development of high brightness light-emitting diodes (LEDs) makes feasible the use of LEDs, among other light sources (such as laser, intense pulse light and other incoherent light systems), for medical treatment and light therapy. This paper provides a general review on red, green, blue, ultraviolet LED applications in photo rejuvenation and medical treatments of a variety of physical abnormalities, as well as the relief of stress, circadian rhythm disorders, and seasonal affective disorder. The review, concentrated in the papers published after 1990, intends to show that LEDs are well qualified to succeed its more energy demanding counterparts in the named areas and beyond. (author)

  1. Electrically driven surface plasmon light-emitting diodes

    DEFF Research Database (Denmark)

    Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

    We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

  2. Degradation of light emitting diodes: a proposed methodology*

    Institute of Scientific and Technical Information of China (English)

    Sau Koh; Willem Van Driel; G.Q.Zhang

    2011-01-01

    Due to their long lifetime and high efficacy, light emitting diodes have the potential to revolutionize the illumination industry. However, self heat and high environmental temperature which will lead to increased junction temperature and degradation due to electrical overstress can shorten the life of the light emitting diode. In this research, a methodology to investigate the degradation of the LED emitter has been proposed. The epoxy lens of the emitter can be modelled using simplified Eyring methods whereas an equation has been proposed for describing the degradation of the LED emitters.

  3. Light-emitting diodes in dermatology: stimulation of wound healing

    Directory of Open Access Journals (Sweden)

    Justyna Fryc

    2016-05-01

    Full Text Available Low-level light therapy (LLLT, which is sometimes included in phototherapy, is an effective therapeutic strategy to improve wound healing and reduce pain, inflammation and swelling. Nowadays, new sources of light, such as light-emitting diodes (LEDs with a broad range of wavelengths, are widely available. The biological effects promoted by LEDs are dependent on irradiation parameters, mainly wavelength and dose. This review article focuses on recent clinical trials using light-emitting diode low-level light therapy (LED-LLLT for enhancing wound healing. In this article, we also cover the mechanisms of action of LLLT on cells and tissues and highlight the importance of defining optimum LLLT parameters for stimulation of wound healing.

  4. Top-Emitting Organic Light-Emitting Devices Based on Silicon Substrate with High Luminance and Low Turn-on Voltage

    Institute of Scientific and Technical Information of China (English)

    WU Zhi-Jun; CHEN Shu-Fen; YANG Hui-Shan; ZHAO Yi; LI Chuan-Nan; HOU Jing-Ying; LIU Shi-Yong

    2005-01-01

    @@ We have fabricated a top- emitting organic light-emitting device on silicon substrate with high yellow luminance based on 5,6,11,12-tetraphenylnaphthacene sub-monolayer. It consists of a thin layer of highly conductive silver as the semitransparent cathode and surfaced-modified Ag as the anode. The device turns on at 3 V with the luminance of 8.4 cd/m2. The maximum current efficiency is 1.3 cd/A at 6 V and the luminance reaches 14790 cd/m2at 14 V. The performance of the device is excellent in top-emitting organic light-emitting devices according to our knowledge.

  5. Bright Light-Emitting Diodes Based on Organometal Halide Perovskite Nanoplatelets.

    Science.gov (United States)

    Ling, Yichuan; Yuan, Zhao; Tian, Yu; Wang, Xi; Wang, Jamie C; Xin, Yan; Hanson, Kenneth; Ma, Biwu; Gao, Hanwei

    2016-01-13

    Bright light-emitting diodes based on solution-processable organometal halide perovskite nanoplatelets are demonstrated. The nanoplatelets created using a facile one-pot synthesis exhibit narrow-band emissions at 529 nm and quantum yield up to 85%. Using these nanoparticles as emitters, efficient electroluminescence is achieved with a brightness of 10 590 cd m(-2) . These ligand-capped nanoplatelets appear to be quite stable in moisture, allowing out-of-glovebox device fabrication.

  6. Enhancement of Stability of Polymer Light-Emitting Diodes by Post Annealing

    Institute of Scientific and Technical Information of China (English)

    YAO Bing; XIE Zhi-Yuan; YANG Jun-Wei; CHENG Yan-Xiang; WANG Li-Xiang

    2007-01-01

    We investigate the effect of thermal annealing before and after cathode deposition on the stability of polymer light-emitting diodes (PLEDs) based on green fluorescent polyfluorene derivative. The annealed PLEDs exhibit improved charge transport and red-shift emission compared to the as-fabricated device. The stability of the PLEDs is largely enhanced by post-annealing before and after Ca deposition, which is attributed to the enhanced charge transport and the intimate contact between the cathode and the emissive layer.

  7. Design Considerations for a Water Treatment System Utilizing Ultra-Violet Light Emitting Diodes

    Science.gov (United States)

    2014-03-27

    industry use for UV fluorescent bulb type water disinfection systems (Aquionics, 2013). Shorter wavelength LEDs (240 nm) were shown to be more...is in its infancy and research as it applies to UV water treatment is required to advance knowledge for practical application. This thesis focused...on two subjects. First, the design, fabrication, and operation of a water treatment reaction system utilizing Ultra-Violet ( UV ) Light Emitting

  8. Towards developing a tandem of organic solar cell and light emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Jai [School of Engineering and IT, B-purple-12, Faculty of EHS, Charles Darwin University, Darwin, NT 0909 (Australia)

    2011-01-15

    It is proposed here to design a tandem of organic solar cell (OSC) and white organic light emitting diode (WOLED) which can generate power in the day time from the sun and provide lighting at night. With the advancement of chemical technology, such device is expected to be very-cost effective and reasonably efficient. A device thus fabricated has the potential of meeting the world's sustainable domestic and commercial power and lighting needs (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Optical manifold for light-emitting diodes

    Science.gov (United States)

    Chaves, Julio C.; Falicoff, Waqidi; Minano, Juan C.; Benitez, Pablo; Parkyn, Jr., William A.; Alvarez, Roberto; Dross, Oliver

    2008-06-03

    An optical manifold for efficiently combining a plurality of blue LED outputs to illuminate a phosphor for a single, substantially homogeneous output, in a small, cost-effective package. Embodiments are disclosed that use a single or multiple LEDs and a remote phosphor, and an intermediate wavelength-selective filter arranged so that backscattered photoluminescence is recycled to boost the luminance and flux of the output aperture. A further aperture mask is used to boost phosphor luminance with only modest loss of luminosity. Alternative non-recycling embodiments provide blue and yellow light in collimated beams, either separately or combined into white.

  10. Highly efficient non-doped blue organic light emitting devices based on anthracene–pyridine derivatives

    Energy Technology Data Exchange (ETDEWEB)

    Haykir, Gulcin; Tekin, Emine; Atalar, Taner; Türksoy, Figen

    2013-12-02

    Four different 2-(10-aryl)anthracen-9-yl)pyridine derivatives 5a–d were synthesized via the Suzuki cross-coupling reaction. Photo-physical characteristics of these materials having strong electron donating or electron withdrawing groups were explored. Multilayer small molecule organic light emitting diodes without any dopant were fabricated in the following sequence: Indium tin oxide/4,4′-bis(N-(1-naphthyl)-N-phenylamino)biphenyl (50 nm)/5a–d (30 nm)/4,7-diphenyl-1,10-phenanthroline (30 nm)/LiF/Al. The electroluminescent property of the device fabricated with 5d as an emitter exhibited a high external quantum efficiency of 3.80% (at around 1 mA/cm{sup 2}) with Commission Internationale De L'Eclairage coordinates of (0.14, 0.25). - Highlights: • Synthesis and characterization of 2-(10-aryl)anthracen-9-yl)pyridine derivatives • Thermal, photophysical and electrochemical properties of anthracene derivatives • Emitters from blue to greenish blue for organic light emitting device applications • Organic light emitting device fabrication and characterization of 2-(10-aryl)anthracen-9-yl)pyridine derivatives.

  11. Magnetoelectroluminescence in organic light emitting diodes

    CERN Document Server

    Lawrence, Joseph E; Manolopoulos, David E; Hore, P J

    2016-01-01

    The magnetoelectroluminescence of conjugated organic polymer films is widely accepted to arise from a polaron pair mechanism, but their magnetoconductance is less well understood. Here we derive a new relationship between the experimentally measurable magnetoelectroluminescence and magnetoconductance and the theoretically calculable singlet yield of the polaron pair recombination reaction. This relationship is expected to be valid regardless of the mechanism of the magnetoconductance, provided the mobilities of the free polarons are independent of the applied magnetic field (i.e., provided one discounts the possibility of spin-dependent transport). We also discuss the semiclassical calculation of the singlet yield of the polaron pair recombination reaction for materials such as poly(2,5-dioctyloxy-paraphenylene vinylene) (DOO-PPV), the hyperfine fields in the polarons of which can be extracted from light-induced electron spin resonance measurements. The resulting theory is shown to give good agreement with ex...

  12. Light extraction from organic light-emitting diodes for lighting applications by sand-blasting substrates.

    Science.gov (United States)

    Chen, Shuming; Kwok, Hoi Sing

    2010-01-04

    Light extraction from organic light-emitting diodes (OLEDs) by scattering the light is one of the effective methods for large-area lighting applications. In this paper, we present a very simple and cost-effective method to rough the substrates and hence to scatter the light. By simply sand-blasting the edges and back-side surface of the glass substrates, a 20% improvement of forward efficiency has been demonstrated. Moreover, due to scattering effect, a constant color over all viewing angles and uniform light pattern with Lambertian distribution has been obtained. This simple and cost-effective method may be suitable for mass production of large-area OLEDs for lighting applications.

  13. All-Quantum-Dot Infrared Light-Emitting Diodes

    KAUST Repository

    Yang, Zhenyu

    2015-12-22

    © 2015 American Chemical Society. Colloidal quantum dots (CQDs) are promising candidates for infrared electroluminescent devices. To date, CQD-based light-emitting diodes (LEDs) have employed a CQD emission layer sandwiched between carrier transport layers built using organic materials and inorganic oxides. Herein, we report the infrared LEDs that use quantum-tuned materials for each of the hole-transporting, the electron-transporting, and the light-emitting layers. We successfully tailor the bandgap and band position of each CQD-based component to produce electroluminescent devices that exhibit emission that we tune from 1220 to 1622 nm. Devices emitting at 1350 nm achieve peak external quantum efficiency up to 1.6% with a low turn-on voltage of 1.2 V, surpassing previously reported all-inorganic CQD LEDs.

  14. All-Quantum-Dot Infrared Light-Emitting Diodes.

    Science.gov (United States)

    Yang, Zhenyu; Voznyy, Oleksandr; Liu, Mengxia; Yuan, Mingjian; Ip, Alexander H; Ahmed, Osman S; Levina, Larissa; Kinge, Sachin; Hoogland, Sjoerd; Sargent, Edward H

    2015-12-22

    Colloidal quantum dots (CQDs) are promising candidates for infrared electroluminescent devices. To date, CQD-based light-emitting diodes (LEDs) have employed a CQD emission layer sandwiched between carrier transport layers built using organic materials and inorganic oxides. Herein, we report the infrared LEDs that use quantum-tuned materials for each of the hole-transporting, the electron-transporting, and the light-emitting layers. We successfully tailor the bandgap and band position of each CQD-based component to produce electroluminescent devices that exhibit emission that we tune from 1220 to 1622 nm. Devices emitting at 1350 nm achieve peak external quantum efficiency up to 1.6% with a low turn-on voltage of 1.2 V, surpassing previously reported all-inorganic CQD LEDs.

  15. A Light Scattering Layer for Internal Light Extraction of Organic Light-Emitting Diodes Based on Silver Nanowires.

    Science.gov (United States)

    Lee, Keunsoo; Shin, Jin-Wook; Park, Jun-Hwan; Lee, Jonghee; Joo, Chul Woong; Lee, Jeong-Ik; Cho, Doo-Hee; Lim, Jong Tae; Oh, Min-Cheol; Ju, Byeong-Kwon; Moon, Jaehyun

    2016-07-13

    We propose and fabricate a random light scattering layer for light extraction in organic light-emitting diodes (OLEDs) with silver nanodots, which were obtained by melting silver nanowires. The OLED with the light scattering layer as an internal light extraction structure was enhanced by 49.1% for the integrated external quantum efficiency (EQE). When a wrinkle structure is simultaneously used for an external light extraction structure, the total enhancement of the integrated EQE was 65.3%. The EQE is maximized to 65.3% at a current level of 2.0 mA/cm(2). By applying an internal light scattering layer and wrinkle structure to an OLED, the variance in the emission spectra was negligible over a broad viewing angle. Power mode analyses with finite difference time domain (FDTD) simulations revealed that the use of a scattering layer effectively reduced the waveguiding mode while introducing non-negligible absorption. Our method offers an effective yet simple approach to achieve both efficiency enhancement and spectral stability for a wide range of OLED applications.

  16. Green route synthesis of high quality CdSe quantum dots for applications in light emitting devices

    Science.gov (United States)

    Bera, Susnata; Singh, Shashi B.; Ray, S. K.

    2012-05-01

    Investigation was made on light emitting diodes fabricated using CdSe quantum dots. CdSe quantum dots were synthesized chemically using olive oil as the capping agent, instead of toxic phosphine. Room temperature photoluminescence investigation showed sharp 1st excitonic emission peak at 568 nm. Bi-layer organic/inorganic (P3HT/CdSe) hybrid light emitting devices were fabricated by solution process. The electroluminescence study showed low turn on voltage (˜2.2 V) .The EL peak intensity was found to increase by increasing the operating current.

  17. Dr. Harry Whelan With the Light Emitting Diode Probe

    Science.gov (United States)

    1999-01-01

    The red light from the Light Emitting Diode (LED) probe shines through the fingers of Dr. Harry Whelan, a pediatric neurologist at the Children's Hospital of Wisconsin in Milwaukee. Dr. Whelan uses the long waves of light from the LED surgical probe to activate special drugs that kill brain tumors. Laser light previously has been used for this type of surgery, but the LED light illuminates through all nearby tissues, reaching parts of tumors that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. Also, it can be used for hours at a time while still remaining cool to the touch. The probe was developed for photodynamic cancer therapy under a NASA Small Business Innovative Research Program grant. The program is part of NASA's Technology Transfer Department at the Marshall Space Flight Center.

  18. Flexible organic light-emitting diodes with poly-3,4-ethylenedioxythiophene as transparent anode

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The flexible oragnic light-emitting diodes (OLEDs) fabricated on poly-3,4-ethylenedioxythiophene/poly- styrenesulfonate (PEDOT/PSS) coated substrates were demonstrated. How the fabricating processes and the device structure will affect the device performance was studied and the atomic force microscopy was employed to analyze the mophorlogy of the conducting polymer anode. Under optimized conditions, flexible OLEDs with PEDOT anode showed the brightness up to 2760 cd/m2 and maximum external quantum efficiency of 1.4%. These data are comparable to those of conventional flexible OLEDs with ITO anode.

  19. Using high-power light emitting diodes for photoacoustic imaging

    DEFF Research Database (Denmark)

    Hansen, René Skov

    The preliminary result of using a high-power light emitting diode, LED, for photoacoustic imaging is presented. The pulsed light source is created by a 1Watt red Luxeon LED. The LED delivers light pulses with 25W peak power when supplied by 40A peak, 60ns wide current pulses. The phantom used...... for the experiment consists of a 3mm high x 5mm wide slice of green colored gelatine overlaid by a 3cm layer of colorless gelatine. The light pulses from the LED is focused on the green gelatine. The photoacoustic response from the green gelatine is detected by a single transducer on the opposite (top) surface...

  20. Toward inkjet printing of small molecule organic light emitting diodes

    NARCIS (Netherlands)

    Gorter, H.; Coenen, M.J.J.; Slaats, M.W.L.; Ren, M.; Lu, W.; Kuijpers, C.J.; Groen, W.A.

    2013-01-01

    Thermal evaporation is the current standard for the manufacture of small molecule organic light emitting diodes (smOLEDs), but it requires vacuum process, complicated shadow masks and is inefficient in material utilization, resulting in high cost of ownership. As an alternative, wet solution deposit

  1. Atom probe tomography of a commercial light emitting diode

    Science.gov (United States)

    Larson, D. J.; Prosa, T. J.; Olson, D.; Lefebvre, W.; Lawrence, D.; Clifton, P. H.; Kelly, T. F.

    2013-11-01

    The atomic-scale analysis of a commercial light emitting diode device purchased at retail is demonstrated using a local electrode atom probe. Some of the features are correlated with transmission electron microscopy imaging. Subtle details of the structure that are revealed have potential significance for the design and performance of this device.

  2. Photon extraction from nitride ultraviolet light-emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Schowalter, Leo J; Chen, Jianfeng; Grandusky, James R

    2015-02-24

    In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.

  3. Organic light emitting diodes with spin polarized electrodes

    NARCIS (Netherlands)

    Arisi, E.; Bergenti, I.; Dediu, V.; Loi, M.A.; Muccini, M.; Murgia, M.; Ruani, G.; Taliani, C.; Zamboni, R.

    2003-01-01

    Electrical and optical properties of Alq3 based organic light emitting diodes with normal and spin polarized electrodes are presented. Epitaxial semitransparent highly spin polarized La0.7Sr0.3MnO3 were used as hole injector, substituting the traditional indium tin oxide electrode. A comparison of e

  4. Toward inkjet printing of small molecule organic light emitting diodes

    NARCIS (Netherlands)

    Gorter, H.; Coenen, M.J.J.; Slaats, M.W.L.; Ren, M.; Lu, W.; Kuijpers, C.J.; Groen, W.A.

    2013-01-01

    Thermal evaporation is the current standard for the manufacture of small molecule organic light emitting diodes (smOLEDs), but it requires vacuum process, complicated shadow masks and is inefficient in material utilization, resulting in high cost of ownership. As an alternative, wet solution deposit

  5. Theory Promises Brighter Perspective for Polymeric Light-Emitting-Diodes

    Institute of Scientific and Technical Information of China (English)

    2004-01-01

    @@ A new take on the theory of light-emitting polymers suggests that their efficiency can be largely increased, a development that would boost the introduction of flexible displays and possibly reduce the cost of flat panel displays which currently depend on very expansive materials.

  6. Operation of AC Adapters Visualized Using Light-Emitting Diodes

    Science.gov (United States)

    Regester, Jeffrey

    2016-01-01

    A bridge rectifier is a diamond-shaped configuration of diodes that serves to convert alternating current(AC) into direct current (DC). In our world of AC outlets and DC electronics, they are ubiquitous. Of course, most bridge rectifiers are built with regular diodes, not the light-emitting variety, because LEDs have a number of disadvantages. For…

  7. CRITICAL ASSESSMENT: Gallium nitride based visible light emitting diodes

    OpenAIRE

    Oliver, Rachel A.

    2016-01-01

    This is the author accepted manuscript. It is currently under an indefinite embargo pending publication by Maney Publishing. Solid state lighting based on light-emitting diodes (LEDs) is a technology with the potential to drastically reduce energy usage, made possible by the development of gallium nitride and its alloys. However, the nitride materials family exhibits high defect densities and, in the equilibrium wurtzite crystal phase, large piezo-electric and polarisation fields arising a...

  8. Organic light emitting diode with light extracting layer

    Science.gov (United States)

    Lu, Songwei

    2016-06-14

    A light extraction substrate includes a glass substrate having a first surface and a second surface. A light extraction layer is formed on at least one of the surfaces. The light extraction layer is a coating, such as a silicon-containing coating, incorporating nanoparticles.

  9. Enhanced Light Extraction from a GaN-based Light Emitting Diode with Triangle Grating Structure

    Directory of Open Access Journals (Sweden)

    Li Cheng

    2013-05-01

    Full Text Available We propose a simple method to improve the light extraction in GaN based light emitting diode. Conventional light emitting diode has an extraction limitation due to the total internal reflection which occurs at the interface between GaN and air. By using periodic grating etched at the GaN layer, we can couple more emitting light out of the active layer. Tapering the grating structure would facilitate the impedance matching between GaN light emitting diode and air, which can enhance broadband light extraction. We use finite difference time domain method to numerically find the best tapering grating structure. The numerical experiment demonstrate an enhance factor 4 of our proposed structure compared with the conventional one over broad band specctrum.

  10. High performance flexible top-emitting warm-white organic light-emitting devices and chromaticity shift mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Hongying; Deng, Lingling; Chen, Shufen, E-mail: iamsfchen@njupt.edu.cn, E-mail: wei-huang@njupt.edu.cn; Xu, Ying; Zhao, Xiaofei; Cheng, Fan [Key Laboratory for Organic Electronics and Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 210023 Nanjing (China); Huang, Wei, E-mail: iamsfchen@njupt.edu.cn, E-mail: wei-huang@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 210023 Nanjing (China); Jiangsu-Singapore Joint Research Center for Organic/Bio- Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Technology, Nanjing 211816 (China)

    2014-04-15

    Flexible warm-white top-emitting organic light-emitting devices (TEOLEDs) are fabricated onto PET substrates with a simple semi-transparent cathode Sm/Ag and two-color phosphors respectively doped into a single host material TCTA. By adjusting the relative position of the orange-red EML sandwiched between the blue emitting layers, the optimized device exhibits the highest power/current efficiency of 8.07 lm/W and near 13 cd/A, with a correlated color temperature (CCT) of 4105 K and a color rendering index (CRI) of 70. In addition, a moderate chromaticity variation of (-0.025, +0.008) around warm white illumination coordinates (0.45, 0.44) is obtained over a large luminance range of 1000 to 10000 cd/m{sup 2}. The emission mechanism is discussed via delta-doping method and single-carrier device, which is summarized that the carrier trapping, the exciton quenching, the mobility change and the recombination zone alteration are negative to color stability while the energy transfer process and the blue/red/blue sandwiched structure are contributed to the color stability in our flexible white TEOLEDs.

  11. Influence of confinement layers in the emitting layer of the blue phosphorescent organic light-emitting diodes

    Science.gov (United States)

    Ji, Chang-Yan; Gu, Zheng-Tian; Kou, Zhi-Qi

    2016-10-01

    The electrical and optical properties of the blue phosphorescent organic light-emitting diodes (PHOLEDs) can be affected by the various structure of confinement layer in the emitting layer (EML). A series of devices with different electron or hole confinement layer (TCTA or Bphen) are fabricated, it is more effective to balance charge carriers injection for the device with the double electron confinement layers structure, the power efficiency and luminance can reach 17.7 lm/W (at 103 cd/m2) and 3536 cd/m2 (at 8 V). In case of the same double electron confinement layers, another series of devices with different profile of EML are fabricated by changing the confinement layers position, the power efficiency and luminance can be improved to 21.7 lm/W (at 103 cd/m2) and 7674 cd/m2 (at 8 V) when the thickness of EML separated by confinement layers increases gradually from the hole injection side to the electron injection side, the driving voltage can also be reduced.

  12. Nanostructured graded-index antireflection layer formation on GaN for enhancing light extraction from light-emitting diodes

    Science.gov (United States)

    Dylewicz, R.; Khokhar, A. Z.; Wasielewski, R.; Mazur, P.; Rahman, F.

    2012-05-01

    We describe the fabrication and characterization of a randomly etched gallium nitride (GaN) surface for enhancing light extraction from light-emitting diodes. Our technique uses silica spheres as nano-targets in a sputter-etch process and produces a fine-grained surface with features around 35 nm. The textured surface layer acts as a graded refractive index layer with antireflection properties. Measurements show that photoluminescence intensity from such treated surfaces on a GaN LED wafer increases 2.2 times over that from pristine surfaces. These findings are also supported by computer modelling studies described here.

  13. Stacking multiple connecting functional materials in tandem organic light-emitting diodes

    Science.gov (United States)

    Zhang, Tao; Wang, Deng-Ke; Jiang, Nan; Lu, Zheng-Hong

    2017-01-01

    Tandem device is an important architecture in fabricating high performance organic light-emitting diodes and organic photovoltaic cells. The key element in making a high performance tandem device is the connecting materials stack, which plays an important role in electric field distribution, charge generation and charge injection. For a tandem organic light-emitting diode (OLED) with a simple Liq/Al/MoO3 stack, we discovered that there is a significant current lateral spreading causing light emission over an extremely large area outside the OLED pixel when the Al thickness exceeds 2 nm. This spread light emission, caused by an inductive electric field over one of the device unit, limits one’s ability to fabricate high performance tandem devices. To resolve this issue, a new connecting materials stack with a C60 fullerene buffer layer is reported. This new structure permits optimization of the Al metal layer in the connecting stack and thus enables us to fabricate an efficient tandem OLED having a high 155.6 cd/A current efficiency and a low roll-off (or droop) in current efficiency. PMID:28225028

  14. Nanostructured High Performance Ultraviolet and Blue Light Emitting Diodes for Solid State Lighting

    Energy Technology Data Exchange (ETDEWEB)

    Arto V. Nurmikko; Jung Han

    2007-03-31

    We report on research results in this project which synergize advanced material science approaches with fundamental optical physics concepts pertaining to light-matter interaction, with the goal of solving seminal problems for the development of very high performance light emitting diodes (LEDs) in the blue and near ultraviolet for Solid State Lighting applications. Accomplishments in the duration of the contract period include (i) new means of synthesizing AlGaN and InN quantum dots by droplet heteroepitaxy, (ii) synthesis of AlGaInN nanowires as building blocks for GaN-based microcavity devices, (iii) progress towards direct epitaxial alignment of the dense arrays of nanowires, (iv) observation and measurements of stimulated emission in dense InGaN nanopost arrays, (v) design and fabrication of InGaN photonic crystal emitters, and (vi) observation and measurements of enhanced fluorescence from coupled quantum dot and plasmonic nanostructures. The body of results is presented in this report shows how a solid foundation has been laid, with several noticeable accomplishments, for innovative research, consistent with the stated milestones.

  15. 电致发光器件衬底透镜微结构纳米热压印制备的研究%Fabrication of organic light-emitting diode substrate microlens arrays using hot nanoimprinting technology

    Institute of Scientific and Technical Information of China (English)

    李阳; 徐维; 王忆; 朱铭佳; 邝文钊

    2013-01-01

    In order to increase the optical efficiency,transferable three-dimensional lens micro-structure which can reduce optical waveguide and increase light out-coupling was fabricated on the substrate using hot nanoimprinting technology. High-precision glass template for UV nanoimprinting was fabricated by combining UV exposure and wet etching technology;cleaning and anti-adhension treatment were used. The result shows that the lens micro-structures are characterized by good flatness,high nanoimprinting precision,likeliness to achieve a large area,to operate and to be reproducible.%采用纳米压印技术在OLED器件衬底上制备可传递三维立体透镜微结构,可有效减小波导、增加出光耦合,从而有望增加器件出光效率。采用紫外曝光与湿法腐蚀技术相结合的方法来制备高精度的石英玻璃纳米压印模板,对模板进行清洗与抗黏连处理。结果表明:所形成的透镜微结构具有平整度好、压印精度高的特点;此种方法制备微结构工艺简单易行,可大面积实现,工艺可操作性、重复性好。

  16. High efficiency III-nitride light-emitting diodes

    Science.gov (United States)

    Crawford, Mary; Koleske, Daniel; Cho, Jaehee; Zhu, Di; Noemaun, Ahmed; Schubert, Martin F; Schubert, E. Fred

    2013-05-28

    Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

  17. Scalable Light Module for Low-Cost, High-Efficiency Light- Emitting Diode Luminaires

    Energy Technology Data Exchange (ETDEWEB)

    Tarsa, Eric [Cree, Inc., Goleta, CA (United States)

    2015-08-31

    During this two-year program Cree developed a scalable, modular optical architecture for low-cost, high-efficacy light emitting diode (LED) luminaires. Stated simply, the goal of this architecture was to efficiently and cost-effectively convey light from LEDs (point sources) to broad luminaire surfaces (area sources). By simultaneously developing warm-white LED components and low-cost, scalable optical elements, a high system optical efficiency resulted. To meet program goals, Cree evaluated novel approaches to improve LED component efficacy at high color quality while not sacrificing LED optical efficiency relative to conventional packages. Meanwhile, efficiently coupling light from LEDs into modular optical elements, followed by optimally distributing and extracting this light, were challenges that were addressed via novel optical design coupled with frequent experimental evaluations. Minimizing luminaire bill of materials and assembly costs were two guiding principles for all design work, in the effort to achieve luminaires with significantly lower normalized cost ($/klm) than existing LED fixtures. Chief project accomplishments included the achievement of >150 lm/W warm-white LEDs having primary optics compatible with low-cost modular optical elements. In addition, a prototype Light Module optical efficiency of over 90% was measured, demonstrating the potential of this scalable architecture for ultra-high-efficacy LED luminaires. Since the project ended, Cree has continued to evaluate optical element fabrication and assembly methods in an effort to rapidly transfer this scalable, cost-effective technology to Cree production development groups. The Light Module concept is likely to make a strong contribution to the development of new cost-effective, high-efficacy luminaries, thereby accelerating widespread adoption of energy-saving SSL in the U.S.

  18. All-inorganic white light emitting devices based on ZnO nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Nannen, Ekaterina

    2012-09-21

    Semiconductor nanaocrystals (NCs) are very promising candidates for lightweight large-area rollable displays and light emitting devices (LEDs). They are expected to combine the efficiency, robustness and color tunability of conventional semiconductor LEDs with the flexible fabrication techniques known from OLED technology, since the NCs are compatible with solution processing and therefore can be deposited on virtually any substrates including glass and plastic. Today, NC-LEDs consist of chemically synthesized QDs embedded in organic charge injection and transport layers. The organic layers limit the robustness of the NC-LEDs and result in significant constrictions within the device fabrication procedure, such as organic evaporation steps, inert (i.e. humidity and oxygen free) atmosphere and obligatory encapsulation. These limitations during the production process as well as complex chemical synthesis route of the implemented NCs and organic components lead to high fabrication costs and low turnover. So far, only prototype devices have been introduced by several research groups and industrial companies. Still, the main concern retarding NC-LEDs from market launch is the high content of toxic heavy metals like Cd in the active nanocrystalline light emitting material. Within this work, possible environmentally safe and ambient-air-compatible alternatives to conventional QDs and organics were explored, with the main focus on design and fabrication of completely inorganic white NC-LEDs with commercial ZnO nanoparticles as an active light emitting material. While the electrical transport properties through the NC-network of the commercially available VP AdNano {sup registered} ZnO2O particles were already to some extent explored, their optical properties and therefore suitability as an active light emitter in NC-LEDs were not studied so far. (orig.)

  19. Ultraviolet light-emitting diodes with polarization-doped p-type layer

    Science.gov (United States)

    Hu, Wenxiao; Qin, Ping; Song, Weidong; Zhang, Chongzhen; Wang, Rupeng; Zhao, Liangliang; Xia, Chao; Yuan, Songyang; Yin, Yian; Li, Shuti

    2016-09-01

    We report ultraviolet light emitting diode (LEDs) with polarization doped p-type layer. Fabricated LEDs with polarization doped p-type layer exhibited reduced forward voltage and enhanced light output power, compared to those with traditional p-type AlGaN layer. The improvement is attributed to improved hole concentration and the smooth valence band by the polarization enhanced p-type doping. Our simulated results reveal that this p-type layer can further enhance the performance of ultraviolet LEDs by removing the electron blocking layer (EBL).

  20. Light emitting diodes as an alternative ambient illumination source in photolithography environment

    DEFF Research Database (Denmark)

    Corell, Dennis Dan; Ou, Haiyan; Dam-Hansen, Carsten

    2009-01-01

    We explored an alternative light emitting diode (LED) - based solution to replace the existing yellow fluorescent light tubes (YFT) used in photolithography rooms. A no-blue LED lamp was designed and a prototype was fabricated. For both solutions, the spectral power distribution (SPD) was measured......, the colorimetric values were calculated, and a visual comparison using Gretagmacbeth colorcharts was performed. The visual comparison showed that the LED bulb was better to render colors despite a low color rendering index (CRI). Furthermore, the LED bulb was tested in a photolithography room...

  1. High color rendering white light-emitting-diode illuminator using the red-emitting Eu(2+)-activated CaZnOS phosphors excited by blue LED.

    Science.gov (United States)

    Kuo, Te-Wen; Liu, Wei-Ren; Chen, Teng-Ming

    2010-04-12

    A red phosphor CaZnOS:Eu(2+) was synthesized by solid state reaction and has been evaluated as a candidate for white LEDs. For this material, the XRD, PL, PL excitation (PLE) and diffuse reflection spectra have also been investigated. CaZnOS:Eu(2+) reveals a broad absorption band and good color purity. By utilizing a mixture of red-emitting CaZnOS:Eu(2+), green-emitting (Ba,Sr)(2)SiO(4):Eu(2+) and yellow-emitting Y(3)Al(5)O(12):Ce(3+) as light converters, an intense white InGaN-based blue-LED (~460 nm) was fabricated to exhibit a high color-rendering index Ra of 85 at a correlated color temperature of 4870 K. Based on the results, we are currently evaluating the potential application of CaZnOS:Eu(2+) as a red-emitting blue-chip convertible phosphor.

  2. Wavelength-tunable and white-light emission from polymer-converted micropixellated InGaN ultraviolet light-emitting diodes

    Science.gov (United States)

    Heliotis, G.; Gu, E.; Griffin, C.; Jeon, C. W.; Stavrinou, P. N.; Dawson, M. D.; Bradley, D. D. C.

    2006-07-01

    We report the use of light-emitting conjugated polymer materials to wavelength-convert the emission from a two-dimensional array of micropixellated InGaN light-emitting diodes (LEDs). We demonstrate hybrid organic/inorganic light-emitting devices that can operate across the entire visible spectrum, and we also fabricate white-emitting versions of these devices by employing single layers of carefully adjusted polymer blends in which cascade non-radiative energy transfer occurs between the constituent materials. Additional colours may be easily obtained by tuning the composition of the polymer blends. Our work demonstrates that the combination of conjugated polymers and UV micro-LED arrays provides an attractive approach to developing microscale wavelength-tunable light sources and may provide a route to low-cost full-colour microdisplays and other instrumentation devices.

  3. Doehlert experimental design applied to optimization of light emitting textile structures

    Science.gov (United States)

    Oguz, Yesim; Cochrane, Cedric; Koncar, Vladan; Mordon, Serge R.

    2016-07-01

    A light emitting fabric (LEF) has been developed for photodynamic therapy (PDT) for the treatment of dermatologic diseases such as Actinic Keratosis (AK). A successful PDT requires homogenous and reproducible light with controlled power and wavelength on the treated skin area. Due to the shape of the human body, traditional PDT with external light sources is unable to deliver homogenous light everywhere on the skin (head vertex, hand, etc.). For better light delivery homogeneity, plastic optical fibers (POFs) have been woven in textile in order to emit laterally the injected light. The previous studies confirmed that the light power could be locally controlled by modifying the radius of POF macro-bendings within the textile structure. The objective of this study is to optimize the distribution of macro-bendings over the LEF surface in order to increase the light intensity (mW/cm2), and to guarantee the best possible light deliver homogeneity over the LEF which are often contradictory. Fifteen experiments have been carried out with Doehlert experimental design involving Response Surface Methodology (RSM). The proposed models are fitted to the experimental data to enable the optimal set up of the warp yarns tensions.

  4. GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management

    KAUST Repository

    Hsiao, Yu Hsuan

    2015-03-01

    Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white-light devices. In this paper, we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced, as well as the fabrication techniques. © 1972-2012 IEEE.

  5. Si light-emitting device in integrated photonic CMOS ICs

    Science.gov (United States)

    Xu, Kaikai; Snyman, Lukas W.; Aharoni, Herzl

    2017-07-01

    The motivation for integrated Si optoelectronics is the creation of low-cost photonics for mass-market applications. Especially, the growing demand for sensitive biochemical sensors in the environmental control or medicine leads to the development of integrated high resolution sensors. Here CMOS-compatible Si light-emitting device structures are presented for investigating the effect of various depletion layer profiles and defect engineering on the photonic transition in the 1.4-2.8 eV. A novel Si device is proposed to realize both a two-terminal Si-diode light-emitting device and a three-terminal Si gate-controlled diode light-emitting device in the same device structure. In addition to the spectral analysis, differences between two-terminal and three-terminal devices are discussed, showing the light emission efficiency change. The proposed Si optical source may find potential applications in micro-photonic systems and micro-optoelectro-mechanical systems (MOEMS) in CMOS integrated circuitry.

  6. Active targeting of tumor cells using light emitting bacteria

    Energy Technology Data Exchange (ETDEWEB)

    Moon, Sung Min; Min, Jung Joon; Hong, Yeong Jin; Kim, Hyun Ju; Le, Uuenchi N.; Rhee, Joon Haeng; Song, Ho Chun; Heo, Young Jun; Bom, Hee Seung; Choy, Hyon E [School of Medicine, Chonnam National University, Gwangju (Korea, Republic of)

    2004-07-01

    The presence of bacteria and viruses in human tumors has been recognized for more than 50 years. Today, with the discovery of bacterial strains that specifically target tumors, and aided by genomic sequencing and genetic engineering, there is new interest in the use of bacteria as tumor vectors. Here, we show that bacteria injected intravenously into live animals entered and replicated in solid tumors and metastases using the novel imaging technology of biophotonics. Bioluminescence operon (LuxCDABE) or fluorescence protein, GFP) has been cloned into pUC19 plasmid to engineer pUC19lux or pUC19gfp. Engineered plasmid was transformed into different kinds of wild type (MG1655) or mutant E. coli (DH5, ppGpp, fnr, purE, crpA, flagella, etc.) strains to construct light emitting bacteria. Xenograft tumor model has been established using CT26 colon cancer cell line. Light emitting bacteria was injected via tail vein into tumor bearing mouse. In vivo bioluminescence imaging has been done after 20 min to 14 days of bacterial injection. We observed localization of tumors by light-emitting E. coli in tumor (CT-26) bearing mice. We confirmed the presence of light-emitting bacteria under the fluorescence microscope with E. coli expressing GFP. Althoug varying mutants strain with deficient invading function has been found in tumor tissues, mutant strains of movement (flagella) couldn't show any light signal from the tumor tissue under the cooled CCD camera, indicating bacteria may actively target the tumor cells. Based on their 'tumor-finding' nature, bacteria may be designed to carry multiple genes or drugs for detection and treatment of cancer, such as prodrug-converting enzymes, toxins, angiogenesis inhibitors and cytokines.

  7. Adoption of Light-Emitting Diodes in Common Lighting Applications

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, Mary [Navigant Consulting, Suwanee, GA (United States); Chwastyk, Dan [Navigant Consulting, Suwanee, GA (United States)

    2013-05-01

    Report estimating LED energy savings in nine applications where LEDs compete with traditional lighting sources such as incandescent, halogen, high-pressure sodium, and certain types of fluorescent. The analysis includes indoor lamp, indoor luminaire, and outdoor luminaire applications.

  8. Adoption of Light-Emitting Diodes in Common Lighting Applications

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, Mary [Navigant, Chicago, IL (United States); Stober, Kelsey [Navigant, Chicago, IL (United States)

    2015-07-01

    Report estimating LED energy savings between 2012 and 2014 in 10 applications where LEDs competed with traditional lighting sources such as incandescent, halogen, high-pressure sodium, and fluorescent. The analysis includes indoor lamp, indoor luminaire, and outdoor luminaire applications.

  9. Fabrication and Characterization of Edge-Emitting Semiconductor Lasers

    Science.gov (United States)

    Song, Junyeob

    The semiconductor laser was invented in 1962, and has recently become ubiquitous in modern life. This thesis focuses on the development of a semiconductor laser fabricating process which utilizes semiconductor manufacturing technology in a cleanroom environment including photolithography, etching, deposition, and bonding processes. A photomask for patterning is designed, recipes of photolithography process and etching process are developed with experiments. This work gives how to develop the process of fabrication and determine the parameters for each processes. A series of semiconductor laser devices are then fabricated using the developed process and characterization is performed to assess device performance with industrial standard methods. A fabricated device has 18W power and 11% conversion efficiency.

  10. Realization of Red-Organic-Light Emitting Diode by Introducing the Double Emitting Zone

    Institute of Scientific and Technical Information of China (English)

    姜文龙; 侯晶莹; 赵毅; 刘式墉

    2003-01-01

    A saturated red-organic-light emitting diode (OLED) has been realized by doping an emitting material both in the hole-transporting layer (HTL) and the electron-transporting layer (ETL) to form double emitting zone. The red dopant, 4-(Dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyraan (DCJTB), was doped into the N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB) layer and the tris (8-quinolinolate)aluminium (Alq3) layer, both of which act as the emitting layers. The optimal device, with a structure of ITO/CuPc/NPB/NPB:DCJTB/Alqa:DCJTB/Alqa/LiF/Al, showed good chromaticity coordinates (x = 0.63,y = 0.36) at 8 V. Uniquely, the current efficiency of the device was relatively independent of the drive voltage in a wide range from 8 V to 20 V. That may be helpful to ameliorate the lifetime of the organic electroluminescent devices and to adjust the grey-scale for the future full-colour display panel.

  11. White organic light-emitting diodes with an ultra-thin premixed emitting layer

    CERN Document Server

    Jeon, T; Tondelier, Denis; Bonnassieux, Yvan; Forget, Sebastien; Chenais, Sebastien; Ishow, Elena

    2014-01-01

    We described an approach to achieve fine color control of fluorescent White Organic Light-Emitting Diodes (OLED), based on an Ultra-thin Premixed emitting Layer (UPL). The UPL consists of a mixture of two dyes (red-emitting 4-di(4'-tert-butylbiphenyl-4-yl)amino-4'-dicyanovinylbenzene or fvin and green-emitting 4-di(4'-tert-butylbiphenyl-4-yl)aminobenzaldehyde or fcho) premixed in a single evaporation cell: since these two molecules have comparable structures and similar melting temperatures, a blend can be evaporated, giving rise to thin films of identical and reproducible composition compared to those of the pre-mixture. The principle of fine color tuning is demonstrated by evaporating a 1-nm-thick layer of this blend within the hole-transport layer (4,4'-bis[N-(1-naphtyl)-N-phenylamino]biphenyl (\\alpha-NPB)) of a standard fluorescent OLED structure. Upon playing on the position of the UPL inside the hole-transport layer, as well as on the premix composition, two independent parameters are available to finel...

  12. LIGHT-EMITTING DIODE TECHNOLOGY IMPROVES INSECT TRAPPING

    Science.gov (United States)

    GILLEN, JONATHON I.; MUNSTERMANN, LEONARD E.

    2008-01-01

    In a climate of increased funding for vaccines, chemotherapy, and prevention of vector-borne diseases, fewer resources have been directed toward improving disease and vector surveillance. Recently developed light-emitting diode (LED) technology was applied to standard insect-vector traps to produce a more effective lighting system. This approach improved phlebotomine sand fly capture rates by 50%, and simultaneously reduced the energy consumption by 50–60%. The LEDs were incorporated into 2 lighting designs, 1) a LED combination bulb for current light traps and 2) a chip-based LED design for a modified Centers for Disease Control and Prevention light trap. Detailed descriptions of the 2 designs are presented. PMID:18666546

  13. Organic light-emitting diodes from homoleptic square planar complexes

    Science.gov (United States)

    Omary, Mohammad A

    2013-11-12

    Homoleptic square planar complexes [M(N.LAMBDA.N).sub.2], wherein two identical N.LAMBDA.N bidentate anionic ligands are coordinated to the M(II) metal center, including bidentate square planar complexes of triazolates, possess optical and electrical properties that make them useful for a wide variety of optical and electrical devices and applications. In particular, the complexes are useful for obtaining white or monochromatic organic light-emitting diodes ("OLEDs"). Improved white organic light emitting diode ("WOLED") designs have improved efficacy and/or color stability at high brightness in single- or two-emitter white or monochrome OLEDs that utilize homoleptic square planar complexes, including bis[3,5-bis(2-pyridyl)-1,2,4-triazolato]platinum(II) ("Pt(ptp).sub.2").

  14. Phosphorescent organic light emitting diodes with high efficiency and brightness

    Science.gov (United States)

    Forrest, Stephen R; Zhang, Yifan

    2015-11-12

    An organic light emitting device including a) an anode; b) a cathode; and c) an emissive layer disposed between the anode and the cathode, the emissive layer comprising an organic host compound and a phosphorescent compound exhibiting a Stokes Shift overlap greater than 0.3 eV. The organic light emitting device may further include a hole transport layer disposed between the emissive layer and the anode; and an electron transport layer disposed between the emissive layer and the cathode. In some embodiments, the phosphorescent compound exhibits a phosphorescent lifetime of less than 10 .mu.s. In some embodiments, the concentration of the phosphorescent compound ranges from 0.5 wt. % to 10 wt. %.

  15. Concave-hemisphere-patterned organic top-light emitting device

    Energy Technology Data Exchange (ETDEWEB)

    Forrest, Stephen R.; Slootsky, Michael; Lunt, Richard

    2015-06-09

    A first device is provided. The first device includes an organic light emitting device, which further comprises a first electrode, a second electrode, and an organic emissive layer disposed between the first and second electrode. Preferably, the second electrode is more transparent than the first electrode. The organic emissive layer has a first portion shaped to form an indentation in the direction of the first electrode, and a second portion shaped to form a protrusion in the direction of the second electrode. The first device may include a plurality of organic light emitting devices. The indentation may have a shape that is formed from a partial sphere, a partial cylinder, a pyramid, or a pyramid with a mesa, among others. The protrusions may be formed between adjoining indentations or between an indentation and a surface parallel to the substrate.

  16. A Pair of Light Emitting Diodes for Absorbance Measurement

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Dongyong; Eom, Inyong [Catholic Univ. of Daegu, Gyeongsan (Korea, Republic of)

    2013-10-15

    Two same wavelength LEDs (i. e. an emitter LED and a detector LED, respectively) were successfully used to measure absorbance of BTB solution. A linear calibration with r-squared value of 0.9945 was achieved. 0.03 μM of LOD was observed with a noise level of 2 Χ 10{sup -4} absorbance unit. We are now examining relative sensitivities of different LEDs with distinct wavelength. In the future, building a spectrophotometer equipped with LEDs is quite interesting both in scientifically and pedagogically (i. e. undergraduate lab course). Light emitting diodes (LEDs) have a semiconductor chip (∼1 mm{sup 2} area) mounted on a concave mirror and emit narrow band of wavelengths when forward biased. LEDs have been widely used in many fields. Conventional light bulbs are being replaced by LED bulbs.

  17. Smartphone-Driven Low-Power Light-Emitting Device

    Directory of Open Access Journals (Sweden)

    Hea-Ja An

    2017-01-01

    Full Text Available Low-level light (laser therapy (LLLT has been widely researched in the recent past. Existing LLLT studies were performed based on laser. Recently, studies using LED have increased. This study presents a smartphone-driven low-power light-emitting device for use in colour therapy as an alternative medicine. The device consists of a control unit and a colour probe. The device is powered by and communicates with a smartphone using USB On-The-Go (OTG technology. The control unit controls emitting time and intensity of illumination with the configuration value of a smartphone application. Intensity is controlled by pulse width modulation (PWM without feedback. A calibration is performed to resolve a drawback of no feedback. To calibrate, intensity is measured in every 10 percent PWM output. PWM value is linearly calibrated to obtain accurate intensity. The device can control the intensity of illumination, and so, it can find application in varied scenarios.

  18. Two-phase cooling of light emitting diode for higher light output and increased efficiency

    NARCIS (Netherlands)

    Ye, H.; Mihailovic, M.; Wong, C.K.Y.; Zeijl, H.W. van; Gielen, A.W.J.; Zhang, G.Q.; Sarro, P.M.

    2013-01-01

    High Power Light Emitting Diode (HP LED) is one of the promising candidates for future lighting systems with efficient energy consumption. However, around 70% of the input power will be still transferred to heat. Recently, to obtain more light output, the increased electrical currents consequently

  19. Sodium bromide additive improved film morphology and performance in perovskite light-emitting diodes

    Science.gov (United States)

    Li, Jinghai; Cai, Feilong; Yang, Liyan; Ye, Fanghao; Zhang, Jinghui; Gurney, Robert S.; Liu, Dan; Wang, Tao

    2017-07-01

    Organometal halide perovskite is a promising material to fabricate light-emitting diodes (LEDs) via solution processing due to its exceptional optoelectronic properties. However, incomplete precursor conversion and various defect states in the perovskite light-emitting layer lead to low luminance and external quantum efficiency of perovskite LEDs. We show here the addition of an optimum amount of sodium bromide in the methylammonium lead bromide (MAPbBr3) precursor during a one-step perovskite solution casting process can effectively improve the film coverage, enhance the crystallinity, and passivate ionic defects on the surface of MAPbBr3 crystal grains, resulting in LEDs with a reduced turn-on voltage from 2.8 to 2.3 V and an enhanced maximum luminance from 1059 to 6942 Cd/m2 when comparing with the pristine perovskite-based device.

  20. The influence of melt purification and structure defects on mid-infrared light emitting diodes

    CERN Document Server

    Krier, A

    2003-01-01

    Mid-infrared light emitting diodes which exhibit more than 7 mW (pulsed) and 0.35 mW dc output power at 3.3 mu m and at room temperature have been fabricated by liquid phase epitaxy using Pb as a neutral solvent. Using Pb solution an increase in pulsed output power of between two and three times was obtained compared with InAs light emitting diodes (LEDs) made using rare-earth gettering. The performance improvements were attributed to a reduction in residual carrier concentration arising from the removal of un-intentional donors and structure defects in the InAs active region material. These LEDs are well matched to the CH sub 4 absorption spectrum and potentially could form the basis of a practical infrared CH sub 4 gas sensor.

  1. Properties of CoPt ferromagnetic layers for application in spin light-emitting diodes

    Science.gov (United States)

    Zdoroveyshchev, A. V.; Dorokhin, M. V.; Vikhrova, O. V.; Demina, P. B.; Kudrin, A. V.; Temiryazev, A. G.; Temiryazeva, M. P.

    2016-11-01

    The magnetic properties of Co45Pt55 films deposited by electron-beam evaporation in vacuum have been studied. The measurements of the Faraday and Kerr magnetooptical effects confirm the presence of the easy-magnetization axis perpendicular to the Co45Pt55 surface. It is shown that the perpendicular magnetic anisotropy and the residual magnetization are retained at 300 K for a long time. The magnetic characteristics of the Co45Pt55 layer surface have been studied by magnetic force microscopy, and "circular" mobile magnetic structures have been detected. The spin light-emitting diodes based on In(Ga)As/GaAs heteronanostructures with Co45Pt55 contact layers were fabricated. These diodes emit circularly-polarized light in the absence of an external magnetic field.

  2. Thin Film Encapsulation of Light-Emitting Diodes with Photopolymerized Polyacrylate and Silver Films

    Institute of Scientific and Technical Information of China (English)

    WANG Li-Duo; WU Zhao-Xin; LI Yang; QIU Yong

    2005-01-01

    @@ A thin film encapsulation of organic light-emitting diodes (OLEDs) is investigated with a multi-layer stack of polyacrylate-Ag-polyacrylate-Ag-polyacrylate-Ag-polyacrylate (PAPAPAP). It is shown that the fabrication of polyacrylate films by a wet process does not affect the electroluminescent (EL) characteristics of the devices and polyacrylate films together with the silver layers can perform to minimize oxygen and water diffusion into the organic light-emitting device. The structure of polyacrylate(20 μm)-Ag(200nm)-polyacrylate(20 μm)-Ag(200nm)-polyacrylate(20μm)-Ag(200nm)-polyacrylate(20μm) is demonstrated to enhance dramatically the lifetime of OLEDs.

  3. Wide Area Thermal Processing of Light Emitting Materials

    Energy Technology Data Exchange (ETDEWEB)

    Duty, Chad E [ORNL; Joshi, Pooran C [ORNL; Jellison Jr, Gerald Earle [ORNL; Angelini, Joseph Attilio [ORNL; Sabau, Adrian S [ORNL

    2011-10-01

    Laboratory laser materials synthesis of wide bandgap materials has been successfully used to create white light emitting materials (LEMs). This technology development has progressed to the exploration on design and construction of apparatus for wide area doping and phase transformation of wide bandgap material substrates. The objective of this proposal is to develop concepts for wide area doping and phase transformation based on AppliCote Associates, LLC laser technology and ORNL high density pulsed plasma arc technology.

  4. New Optoelectronic Technology Simplified for Organic Light Emitting Diode (OLED)

    OpenAIRE

    Andre F. S. Guedes; Vilmar P. Guedes; Simone Tartari; Mônica L. Souza; Idaulo J. Cunha

    2014-01-01

    The development of Organic Light Emitting Diode (OLED), using an optically transparent substrate material and organic semiconductor materials, has been widely utilized by the electronic industry when producing new technological products. The OLED are the base Poly (3,4-ethylenedioxythiophene), PEDOT, and Polyaniline, PANI, were deposited in Indium Tin Oxide, ITO, and characterized by UV-Visible Spectroscopy (UV-Vis), Optical Parameters (OP) and Scanning Electron Microscopy (SEM). In addition,...

  5. Light emitting polymers on flexible substrates for Naval firefighting applications

    OpenAIRE

    Brisar, Jon David

    2005-01-01

    Approved for public release, distribution is unlimited Display technologies in the current market range from the simple and cheap incandescent bulb behind a graphic overlay to the upwardly expensive flat panel high definition plasma display. To provide a foundation of understanding for Light Emitting Polymers (LEP), samples were imaged in a scanning electron microscope. This was preformed to identify a potential method for answering questions on polymer charge mobility and diffusion mechan...

  6. Synthesis of Conjugated Polymers for Light Emitting and Photovoltalc Applications

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    1 Results The initial report of polymeric light-emitting diodes (PLEDs) based on poly(p-phenylenevinylene) gave birth to an intense research effort in conjugated polymers, primarily focused on the development of optoelectronic and electrochemical devices. Significant developments in modern synthetic chemistry, especially the chemistry of carbon-carbon bond formation have allowed the synthesis of various well-defined conjugated polymers and oligomers with optimized physical properties.Meanwhile, these re...

  7. Hybrid light emitting diodes based on solution processed polymers, colloidal quantum dots, and colloidal metal nanoparticles

    Science.gov (United States)

    Ma, Xin

    This dissertation focuses on solution-processed light-emitting devices based on polymer, polymer/PbS quantum dot, and polymer/silver nanoparticle hybrid materials. Solution based materials and organic/inorganic hybrid light emitting diodes attracted significant interest recently due to many of their advantages over conventional light emitting diodes (LEDs) including low fabrication cost, flexible, high substrate compatibility, as well as tunable emission wavelength of the quantum dot materials. However, the application of these novel solution processed materials based devices is still limited due to their low performances. Material properties and fabrication parameters need to be carefully examined and understood for further device improvement. This thesis first investigates the impact of solvent property and evaporation rate on the polymer molecular chain morphology and packaging in device structures. Solvent is a key component to make the active material solution for spin coating fabrication process. Their impacts are observed and examined on both polymer blend system and mono-polymer device. Secondly, PbS colloidal quantum dot are introduced to form hybrid device with polymer and to migrate the device emission into near-IR range. As we show, the dithiol molecules used to cross-link quantum dots determine the optical and electrical property of the resulting thin films. By choosing a proper ligand for quantum dot ligand exchange, a high performance polymer/quantum dot hybrid LED is fabricated. In the end, the interaction of polymer exciton with surface plasmon mode in colloidal silver nanoparticles and the use of this effect to enhance solution processed LEDs' performances are investigated.

  8. Highly Bright White Organic Light-Emitting Diode

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    @@ A highly bright white organic light-emitting diode (OLED) was realized by using a highly bright blue emitting layer, 1,7-diphenyl-4-biphenyl-3,5-dimethyl-l,7-dihydrodipyrazolo[3,4-b;4',3'-e]pyridine (PAP-Ph), together with a 4-(dicyanomethylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (DCM)-doped Alq [tris(8-hydroxyquinolinato) aluminum (Ⅲ)] layer to provide the blue, red and green emission for color mixing. With appropriate thickness control, the white-light OLED has a performance that reaches 24700 cd/m2 at 15 V, 1.93 lm/W at 6.5 V, and >300 cd/m2 at 7.7 mA/em2. The Commission Internationale de l'Eclairage (CIE) coordinates of the emitted light vary in a very small range, from (0.35, 0.34) to (0.34, 0.35), when forward voltages change from 6 to 12 V.

  9. Highly Bright White Organic Light-Emitting Diode

    Institute of Scientific and Technical Information of China (English)

    KO; C.; W.

    2001-01-01

    A highly bright white organic light-emitting diode (OLED) was realized by using a highly bright blue emitting layer, 1,7-diphenyl-4-biphenyl-3,5-dimethyl-l,7-dihydrodipyrazolo[3,4-b;4',3'-e]pyridine (PAP-Ph), together with a 4-(dicyanomethylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (DCM)-doped Alq [tris(8-hydroxyquinolinato) aluminum (Ⅲ)] layer to provide the blue, red and green emission for color mixing. With appropriate thickness control, the white-light OLED has a performance that reaches 24700 cd/m2 at 15 V, 1.93 lm/W at 6.5 V, and >300 cd/m2 at 7.7 mA/em2. The Commission Internationale de l'Eclairage (CIE) coordinates of the emitted light vary in a very small range, from (0.35, 0.34) to (0.34, 0.35), when forward voltages change from 6 to 12 V.  ……

  10. A device of comparison of light-emitting diodes for a light stream.

    Directory of Open Access Journals (Sweden)

    G. A. Mirskikh

    2011-03-01

    Full Text Available The simple method of comparison of light-emitting diodes after a light stream and possible construction of setting of this method are presented in this article. Parabolic mirrors are specially entered in a construction, as directing concentrators of light stream, and vibromotor with automatic control. Near one focus of mirrors set a light-emitting diode which is envisaged on a vibromotor, and on an opposite mirror in focus fasten fotodetector. After including to the vibromotor, by oscillation vibrations a light-emitting diode in one of moments is combined with focus of parabolic mirror. Whereupon, a light stream is directed by a parabolic mirror on opposite and gathers in focus last, where and registered by fotodetector. The entered vibration imitates the frequent measuring of stream that saves time on realization of measuring.

  11. Curing efficacy of light emitting diodes of dental curing units

    Directory of Open Access Journals (Sweden)

    Seyd Mostafa Mousavinasab

    2009-03-01

    Full Text Available Background and aims. The aim of the present study was to compare the efficacy of quartz tungsten halogen (QTH and light emitting diode (LED curing lights on polymerization of resin composite. Materials and Methods. A hybrid resin composite was used to prepare samples which were cured using two QTH and ten LED light curing sources. Twelve groups, each containing ten samples, were prepared using each light source. The cured depth of the resin was determined using ISO 4049 method and Vickers hardness values were determined at 1.0 mm intervals. Data was analyzed by ANOVA and Tukey test. Results. Data analysis demonstrated a significant difference between light sources for depth of cure. At 1.0 mm below the surface all the tested light sources and at 2.0-mm intervals all light sources except two (Optilux 501 and LEDemetron I and at 3.0-mm intervals only two light sources (PenCure and LEDemetron II could produce hardness values higher than 80% of superficial layer values. Conclusion. This study showed that a variety of LED light sources used in the present study are as effective as the high-intensity QTH lights in polymerization of resin composite.

  12. High performance gallium nitride based blue light emitting diode material epitaxy and dry etching fabrication technology%氮化镓基高亮度发光二极管材料外延和干法刻蚀技术

    Institute of Scientific and Technical Information of China (English)

    罗毅; 邵嘉平; 郭文平; 韩彦军; 胡卉; 薛松; 孙长征; 郝智彪

    2004-01-01

    通过对氮化镓(Gallium nitride,GaN)基蓝色高亮度发光二极管(High brightness light emitting diode,HB-LED)材料金属有机气相外延(Metal organic vapor phase epitaxy,MOVPE)生长技术的研究和优化以及在有源区内引入新型InxGa1-xN/GaN多量子阱(Multiple quantum wells,MQWs)结构,获得了高性能的HB-LED外延片材料.高分辨率X射线衍射(High resolution X-ray diffraction,HR-XRD)和变温光致荧光谱(Temperature dependent photoluminescence spectra,TD-PL Spectra)测量表明外延材料的异质界面陡峭,单晶质量优异,并由变注入电致荧光谱(Injection dependent electroluminescence spectra,ID-EL spectra)测量获得:HB-LED芯片的峰值发光波长在注入电流为2 mA至120 mA变化下蓝移量小于1 nm,电致荧光谱的半高全宽值(Full width hlf maximum,FWHM)在注入电流为20 mA时仅为18 nm.此外,还介绍了GaN基材料感应耦合等离子体(Inductivelycoupled plasma,ICP)干法刻蚀技术.考虑实际需要,本文作者开发了AlGaN/GaN异质材料的非选择性刻蚀工艺,原子力显微镜(Atomic force microscope,AFM)观察得到AlGaN/GaN刻蚀表面均方根粗糙度RMS仅为0.85nm,与外延片的表面平整度相当.还获得了AlGaN/GaN高选择比的刻蚀技术,GaN和AlGaN的刻蚀选择比为60.

  13. Blue-light emitting triazolopyridinium and triazoloquinolinium salts

    KAUST Repository

    Carboni, Valentina

    2017-01-27

    Compounds that emit blue light are of interest for applications that include optoelectronic devices and chemo/biosensing and imaging. The design and synthesis of small organic molecules that can act as high-efficiency deep-blue-light emitters in the solid state and can be easily processed from solutions represents a significant challenge. Herein we present the preparation and photophysical, photochemical and electrochemical properties of a series of triazolopyridinium and triazoloquinolinium compounds. The compounds are soluble in water or polar organic solvents and exhibit photoluminescence in the blue region of the spectrum in fluid solution, in the solid state and in a frozen matrix.

  14. Novel Blue Light-emitting PPV-based Copolymer Containing Triazole and Carbazole Units

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    A novel alternating conjugated copolymer containing triazole and carbazole units was synthesized by the Wittig reaction. The resulting bipolar conjugated polymer emits a pure light with good thermal stability, which is a promising candidate for polymer light emitting display.

  15. Blue laser diode (LD) and light emitting diode (LED) applications

    Science.gov (United States)

    Bergh, Arpad A.

    2004-09-01

    The family of blue LEDs, edge emitting and surface emitting lasers, enable a number of applications. Blue lasers are used in digital applications such as optical storage in high density DVDs. The resolution of the spot size and hence the storage density is diffraction limited and is inversely proportional to the square of the wavelength of the laser. Other applications include printing, optical scanners, and high-resolution photo-lithography.As light emitters, blue LEDs are used for signaling and in direct view large area emissive displays. They are also making inroads into signage and LCD back-lighting, mobile platforms, and decorative accent lighting in curtains, furniture, etc.Blue LEDs produce white light either with phosphor wavelength converters or in combination with red and green LEDs. The full potential of LED light sources will require three devices to enable complete control over color and intensity.Sensing and medical/bio applications have a major impact on home security, on monitoring the environment, and on health care. New emerging diagnostic and therapeutic applications will improve the quality and reduce the cost of health care.

  16. Organic Light-Emitting Transistors: Materials, Device Configurations, and Operations.

    Science.gov (United States)

    Zhang, Congcong; Chen, Penglei; Hu, Wenping

    2016-03-09

    Organic light-emitting transistors (OLETs) represent an emerging class of organic optoelectronic devices, wherein the electrical switching capability of organic field-effect transistors (OFETs) and the light-generation capability of organic light-emitting diodes (OLEDs) are inherently incorporated in a single device. In contrast to conventional OFETs and OLEDs, the planar device geometry and the versatile multifunctional nature of OLETs not only endow them with numerous technological opportunities in the frontier fields of highly integrated organic electronics, but also render them ideal scientific scaffolds to address the fundamental physical events of organic semiconductors and devices. This review article summarizes the recent advancements on OLETs in light of materials, device configurations, operation conditions, etc. Diverse state-of-the-art protocols, including bulk heterojunction, layered heterojunction and laterally arranged heterojunction structures, as well as asymmetric source-drain electrodes, and innovative dielectric layers, which have been developed for the construction of qualified OLETs and for shedding new and deep light on the working principles of OLETs, are highlighted by addressing representative paradigms. This review intends to provide readers with a deeper understanding of the design of future OLETs.

  17. A new blue-emitting phosphor of Ce 3+-activated CaLaGa 3S 6O for white-light-emitting diodes

    Science.gov (United States)

    Yu, Ruijin; Wang, Jing; Zhang, Mei; Zhang, Jianhui; Yuan, Haibin; Su, Qiang

    2008-03-01

    A new blue-emitting chalcogenide phosphor, Ce3+-activated CaLaGa3S6O, with a high purity crystalline was synthesized by a two-step solid-state reaction. Photoluminescence properties of CaLaGa3S6O:Ce3+ were investigated comparatively with the commercial blue-emitting phosphor BaMgAl10O17:Eu2+. It shows a more perfect and efficient broad absorption band around the 398 nm emission of the commercial near ultraviolet light-emitting diodes (LEDs), and presents a comparable blue-emitting performance. The blue light-emitting LED with the CIE chromaticity coordinates of (0.147, 0.089) was successfully fabricated by precoating CaLaGa3S6O:Ce3+ phosphor onto a 398 nm-emitting InGaN chip. All these results indicate that CaLaGa3S6O:Ce3+ is a promising blue phosphor candidate for white LEDs.

  18. Enhanced light emission from top-emitting organic light-emitting diodes by optimizing surface plasmon polariton losses

    CERN Document Server

    Fuchs, Cornelius; Wieczorek, Martin; Gather, Malte C; Hofmann, Simone; Reineke, Sebastian; Leo, Karl; Scholz, Reinhard

    2015-01-01

    We demonstrate enhanced light extraction for monochrome top-emitting organic light-emitting diodes (OLEDs). The enhancement by a factor of 1.2 compared to a reference sample is caused by the use of a hole transport layer (HTL) material possessing a low refractive index (1.52). The low refractive index reduces the in-plane wave vector of the surface plasmon polariton (SPP) excited at the interface between the bottom opaque metallic electrode (anode) and the HTL. The shift of the SPP dispersion relation decreases the power dissipated into lost evanescent excitations and thus increases the outcoupling efficiency, although the SPP remains constant in intensity. The proposed method is suitable for emitter materials owning isotropic orientation of the transition dipole moments as well as anisotropic, preferentially horizontal orientation, resulting in comparable enhancement factors. Furthermore, for sufficiently low refractive indices of the HTL material, the SPP can be modeled as a propagating plane wave within ot...

  19. III-nitride based light emitting diodes and applications

    CERN Document Server

    Han, Jung; Amano, Hiroshi; Morkoç, Hadis

    2013-01-01

    Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive applications. However, its ultimate goal is to replace traditional illumination through LED lamps since LED lighting significantly reduces energy consumption and cuts down on carbon-dioxide emission. Despite dramatic advances in LED technologies (e.g., growth, doping and processing technologies), however, there remain critical issues for further improvements yet to be achieved for the realization of solid-state lighting. This book aims to provide the readers with some contemporary LED issues, which have not been comprehensively discussed in the published books and, on which the performance of LEDs is seriously dependent. For example, most importantly, there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and and In-rich GaN-based semiconductors. The materials quality is directly dependent on th...

  20. Empirical Measurements of Filtered Light Emitting Diode (FLED) Replacements

    Science.gov (United States)

    Craine, Eric R.

    2016-05-01

    Low pressure sodium (LPS) public lighting, long favored by astronomers and dark sky advocates, is in decline due to a variety of economic issues. Light emitting diode (LED) technology is a rapidly ascendant mode of lighting in everything from residential to commercial applications. The resulting transition from LPS to LED has been accompanied by great angst in the environmental community, but very little has been done in the way of empirical measurement of LEDs in the field and their actual impacts on communities. The community of Waikoloa Village, Hawaii is located on the western slopes of Mauna Kea, within direct line of sight view of the major astronomical observatories on the mountain summit. Waikoloa has been rigorously illuminated almost exclusively by LPS for many years in acknowledgement of the importance of the Mauna Kea Observatories to the Big Island of Hawaii. As LPS ceases to be a viable alternative for local government support, a decision has been made to experimentally retrofit all of the Waikoloa street lighting with filtered light emitting diode (FLED) fixtures. This action has rendered Waikoloa Village a unique laboratory for evaluating the effects of such a change. STEM Laboratory has been awarded a research grant to make a variety of measurements of the light at night environment of Waikoloa Village both before and after the street light retrofit program. Measurements were conducted using a combination of techniques: Satellite Data Surveys (SDS), Ground Static Surveys (GSS photometry), Ground Mobile Surveys (GMS photometry), Airborne Surveys (ABS photography), and Spectroscopic Surveys (SpecS). The impact of the changes in lighting sources was profound, and the preliminary results of this extensive program are discussed in this presentation.

  1. White organic light-emitting device with both phosphorescent and fluorescent emissive layers

    Institute of Scientific and Technical Information of China (English)

    Zhang Li-Juan; Hun Yu-Lin; Wu Xiao-Ming; Wang Yu; Yin Shou-Geng

    2008-01-01

    This paper reports the fabrication of novel white organic light-emitting device(WOLED) by using a high efficiency blue fluorescent dye N-(4-((E)-2-(6-((E)-4-(diphenylamino)styryl)naphthalen-2-yl)vinyl)phenyl)-N-phenylbenzenamine (N-BDAVBi) and a red phosphoresecent dye bis (1-(phenyl) isoquinoline) iridium (Ⅲ) acety-lanetonate (Ir(piq)2(acac)). The configuration of the device was ITO/PVK:TPD/CBP: N-BDAVBi /CBP/ BALq:Ir(piq)2(acac)/BCP/Alq3/LiF:AL. By adjusting the proportion of the dopants (N-BDAVBi, Ir(piq)2(acac)) in the light-emitting layer, white light with Commission Internationale de l'Eclairage (CIE) coordinates of (0.35, 0.35) and a maximum luminance of 25350cd/m2 were obtained at an applied voltage of 22V. The WOLED exhibits maximum external quantum and current efficiency of 6.78% and 12ed/A respectively. By placing an undoped spacer CBP layer between the two light-emitting layers and using BCP as hole blocking layer, the colour stabilization slightly changed when the driving voltage increased from 6 to 22 V.

  2. Improved heat dissipation in gallium nitride light-emitting diodes with embedded graphene oxide pattern.

    Science.gov (United States)

    Han, Nam; Cuong, Tran Viet; Han, Min; Ryu, Beo Deul; Chandramohan, S; Park, Jong Bae; Kang, Ji Hye; Park, Young-Jae; Ko, Kang Bok; Kim, Hee Yun; Kim, Hyun Kyu; Ryu, Jae Hyoung; Katharria, Y S; Choi, Chel-Jong; Hong, Chang-Hee

    2013-01-01

    The future of solid-state lighting relies on how the performance parameters will be improved further for developing high-brightness light-emitting diodes. Eventually, heat removal is becoming a crucial issue because the requirement of high brightness necessitates high-operating current densities that would trigger more joule heating. Here we demonstrate that the embedded graphene oxide in a gallium nitride light-emitting diode alleviates the self-heating issues by virtue of its heat-spreading ability and reducing the thermal boundary resistance. The fabrication process involves the generation of scalable graphene oxide microscale patterns on a sapphire substrate, followed by its thermal reduction and epitaxial lateral overgrowth of gallium nitride in a metal-organic chemical vapour deposition system under one-step process. The device with embedded graphene oxide outperforms its conventional counterpart by emitting bright light with relatively low-junction temperature and thermal resistance. This facile strategy may enable integration of large-scale graphene into practical devices for effective heat removal.

  3. 150 mW deep-ultraviolet light-emitting diodes with large-area AlN nanophotonic light-extraction structure emitting at 265 nm

    Science.gov (United States)

    Inoue, Shin-ichiro; Tamari, Naoki; Taniguchi, Manabu

    2017-04-01

    High-power 265 nm deep-ultraviolet (DUV) AlGaN-based light-emitting diodes (LEDs) with large-area AlN nanophotonic light-extraction structures that were fabricated by a nanoimprint lithography process are presented. Each DUV-LED has a large active area (mesa size of ˜0.35 mm2) and a uniform current spreading design that allows high injection current operation. We have shown that these DUV-LEDs with their large-area nanoimprinted AlN nanophotonic structures exhibit wider near-field emitting areas, stronger far-field extracted light intensities, and an approximately 20-fold increase in output power when compared with a conventional flat-surface DUV-LED. A large-area nanoimprinted single-chip DUV-LED operating in the UV-C wavelength regime has demonstrated a record continuous-wave output power in excess of 150 mW for an injection current of 850 mA at a peak emission wavelength of 265 nm.

  4. 77 FR 21038 - Energy Conservation Program: Test Procedures for Light-Emitting Diode Lamps

    Science.gov (United States)

    2012-04-09

    ... Parts 429 and 430 RIN 1904-AC67 Energy Conservation Program: Test Procedures for Light-Emitting Diode... light-emitting diode (LED) lamps to support implementation of labeling provisions by the Federal Trade... procedures. This rulemaking establishes test procedures that manufacturers of light-emitting diode (LED...

  5. Organic light-emitting diodes using novel embedded al gird transparent electrodes

    Science.gov (United States)

    Peng, Cuiyun; Chen, Changbo; Guo, Kunping; Tian, Zhenghao; Zhu, Wenqing; Xu, Tao; Wei, Bin

    2017-03-01

    This work demonstrates a novel transparent electrode using embedded Al grids fabricated by a simple and cost-effective approach using photolithography and wet etching. The optical and electrical properties of Al grids versus grid geometry have been systematically investigated, it was found that Al grids exhibited a low sheet resistance of 70 Ω □-1 and a light transmission of 69% at 550 nm with advantages in terms of processing conditions and material cost as well as potential to large scale fabrication. Indium Tin Oxide-free green organic light-emitting diodes (OLED) based on Al grids transparent electrodes was demonstrated, yielding a power efficiency >15 lm W-1 and current efficiency >39 cd A-1 at a brightness of 2396 cd m-2. Furthermore, a reduced efficiency roll-off and higher brightness have been achieved compared with ITO-base device.

  6. Evaluation of InGaN/GaN light-emitting diodes of circular geometry.

    Science.gov (United States)

    Wang, X H; Fu, W Y; Lai, P T; Choi, H W

    2009-12-07

    Blue GaN light emitting diodes (LEDs) in the shape of cuboids and circular disks have been fabricated by laser micromachining. The proposed circular geometry serves to enhance overall light extraction on a macro-scale and to improve uniformity of the emission pattern due to the rotational symmetry of the chip. Analysis of the chip shaping effect is carried out by ray-tracing simulations and further supported with mathematical modeling using ideal LED models, and subsequently verified with fabricated devices. In comparison, a 10% improvement in overall emission was observed for circular LEDs over the regular cuboids, consistent with simulations and calculations. The measured emission pattern from the circular LED confirms the axial symmetry of the emission beam.

  7. CURRENT STATE OF AUTOMOTIVE LIGHTING EQUIPMENT WITH NON-REPLACEABLE LIGHT SOURCES ON BASIS OF LIGHT-EMITTING DIODE TECHNOLOGIES

    Directory of Open Access Journals (Sweden)

    S. Sernov

    2012-01-01

    Full Text Available The paper contains information on the current state of automotive lighting equipment. Different designs of automotive lighting devices, their merits and demerits are described in the paper. The paper includes a substantiation of expediency of developing light-emitting diode lighting and proposes recommendations about optimization of their design.

  8. Nanoporous silicon tubes: the role of geometry in nanostructure formation and application to light emitting diodes

    Science.gov (United States)

    Vukajlović Pleština, Jelena; Đerek, Vedran; Francaviglia, Luca; Amaduzzi, Francesca; Potts, Heidi; Ivanda, Mile; Morral, Anna Fontcuberta i.

    2017-07-01

    Obtaining light emission from silicon has been the holy grail of optoelectronics over the last few decades. One of the most common methods for obtaining light emission from silicon is to reduce it to a nanoscale structure, for example by producing porous silicon. Here, we present a method for the large-area fabrication of porous silicon microtubes by the stain etching of silicon micropillar arrays. We explain and model how the formation of the microtubes is influenced by the morphology of the substrate, especially the concave or convex character of the 3D features. Light emission is demonstrated at the micro- and nanoscale respectively by photo- and cathodoluminescence. Finally, we demonstrate a 0.55 cm2 device that can work as a photodetector with 2.3% conversion efficiency under one sun illumination, and also as a broadband light emitting diode, illustrating the applicability of our results for optoelectronic applications.

  9. White organic light-emitting diodes based on C545T doped emitting system

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Hua-Ping; Zhou, Fan; Zhang, Liang [Department of Materials Science, Shanghai University, Jiading, Shanghai (China); Li, Jun; Jiang, Xue-Yin; Zhang, Zhi-Lin; Zhang, Jian-Hua [Department of Materials Science, Shanghai University, Jiading, Shanghai (China); Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai (China); Zhang, Xiao-Wen [Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin (China)

    2012-02-15

    Fluorescent white organic light-emitting diodes (WOLEDs) with single-emitting layer (EML) and double-EML structures were demonstrated using a 2,3,6,7-tetrahydro-1,1,7,7,-tetramethyl-1H,5H,11H-10(2-benzothiazolyl)quinolizine-[9,9a,1gh]coumarin (C545T) doped emitting system. With the incorporation of double-EML structure, white emission with Commission Internationale de L'Eclairage (CIE) color coordinates of (0.331, 0.335) and luminous efficiency of 8.04 cd/A was obtained. Moreover, WOLED with a single-EML structure shows superior electroluminescence performances such as lower voltage, higher luminance, and enhanced power efficiency. These improvements are attributed to its high energy transfer ability via the intermediation of C545T. The Forster's radius was given to clarify the actual energy transfer process. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. A highly efficient white-light-emitting diode based on a two-component polyfluorene/quantum dot composite

    Science.gov (United States)

    Dayneko, S. V.; Samokhvalov, P. S.; Lypenko, D.; Nosova, G. I.; Berezin, I. A.; Yakimanskii, A. V.; Chistyakov, A. A.; Nabiev, I.

    2017-01-01

    Organic light-emitting diodes (OLEDs) are attracting great interest of the scientific community and industry because they can be grown on flexible substrates using relatively simple and inexpensive technologies (solution processes). However, a problem in the fabrication of white OLEDs is that it is difficult to achieve a balance between the intensities of individual emission components in the blue, green, and red spectral regions. In this work, we try to solve this problem by creating a two-component light-emitting diode based on modified polyfluorene (PF-BT), which efficiently emits in the blue-green region, and CdSe/ZnS/CdS/ZnS semiconductor quantum dots emitting in the orange-red region with a fluorescence quantum yield exceeding 90%. By changing the mass ratio of components in the active light-emitting composite within 40-50%, it is possible to transform the diode emission spectrum from cold to warm white light without loss of the diode efficiency. It is very likely that optimization of the morphology of multilayer light-emitting diodes will lead to further improvement of their characteristics.

  11. Light emitting diodes (LEDs) applied to microalgal production.

    Science.gov (United States)

    Schulze, Peter S C; Barreira, Luísa A; Pereira, Hugo G C; Perales, José A; Varela, João C S

    2014-08-01

    Light-emitting diodes (LEDs) will become one of the world's most important light sources and their integration in microalgal production systems (photobioreactors) needs to be considered. LEDs can improve the quality and quantity of microalgal biomass when applied during specific growth phases. However, microalgae need a balanced mix of wavelengths for normal growth, and respond to light differently according to the pigments acquired or lost during their evolutionary history. This review highlights recently published results on the effect of LEDs on microalgal physiology and biochemistry and how this knowledge can be applied in selecting different LEDs with specific technical properties for regulating biomass production by microalgae belonging to diverse taxonomic groups. Copyright © 2014 Elsevier Ltd. All rights reserved.

  12. III-nitride based light emitting diodes and applications

    CERN Document Server

    Han, Jung; Amano, Hiroshi; Morkoç, Hadis

    2017-01-01

    The revised edition of this important book presents updated and expanded coverage of light emitting diodes (LEDs) based on heteroepitaxial GaN on Si substrates, and includes new chapters on tunnel junction LEDs, green/yellow LEDs, and ultraviolet LEDs. Over the last two decades, significant progress has been made in the growth, doping and processing technologies of III-nitride based semiconductors, leading to considerable expectations for nitride semiconductors across a wide range of applications. LEDs are already used in traffic signals, signage lighting, and automotive applications, with the ultimate goal of the global replacement of traditional incandescent and fluorescent lamps, thus reducing energy consumption and cutting down on carbon-dioxide emission. However, some critical issues must be addressed to allow the further improvements required for the large-scale realization of solid-state lighting, and this book aims to provide the readers with details of some contemporary issues on which the performanc...

  13. Thermal resistance of light emitting diode PCB with thermal vias.

    Science.gov (United States)

    Lee, Hyo Soo; Shin, Hyung Won; Jung, Seung Boo

    2012-04-01

    Light emitting diodes (LEDs) are already familiar for use as lighting sources in various electronic devices and displays. LEDs have many advantages such as long life, low power consumption, and high reliability. In the future, as an alternative to fluorescent lighting, LEDs are certain to receive much attention. However, in components related to advanced LED packages or modules there has been an issue regarding the heat from the LED chip. The LED chip is still being developed for use in high-power devices which generate more heat. In this study, we investigate the variation of thermal resistance in LED modules embedded with thermal vias. Through the analysis of thermal resistance with various test vehicles, we obtained the concrete relationship between thermal resistance and the thermal via structure.

  14. Luminescence and the light emitting diode the basics and technology of leds and the luminescence properties of the materials

    CERN Document Server

    Williams, E W; Pamplin, BR

    2013-01-01

    Luminescence and the Light Emitting Diode: The Basics and Technology of LEDS and the Luminescence Properties of the Materials focuses on the basic physics and technology of light emitting diodes (LEDS) and pn junction lasers as well as their luminescence properties. Optical processes in semiconductors and the useful devices which can be made are discussed. Comprised of 10 chapters, this book begins with an introduction to the crystal structure and growth, as well as the optical and electrical properties of LED materials. The detailed fabrication of the LED is then considered, along with the lu

  15. Finding the Average Speed of a Light-Emitting Toy Car with a Smartphone Light Sensor

    Science.gov (United States)

    Kapucu, Serkan

    2017-01-01

    This study aims to demonstrate how the average speed of a light-emitting toy car may be determined using a smartphone's light sensor. The freely available Android smartphone application, "AndroSensor," was used for the experiment. The classroom experiment combines complementary physics knowledge of optics and kinematics to find the…

  16. Electroluminescent Characteristics of DBPPV–ZnO Nanocomposite Polymer Light Emitting Devices

    OpenAIRE

    2009-01-01

    Abstract We have demonstrated that fabrication and characterization of nanocomposite polymer light emitting devices with metal Zinc Oxide (ZnO) nanoparticles and 2,3-dibutoxy-1,4-poly(phenylenevinylene) (DBPPV). The current and luminance characteristics of devices with ZnO nanoparticles are much better than those of device with pure DBPPV. Optimized maximum luminance efficiencies of DBPPV–ZnO (3:1 wt%) before annealing (1.78 cd/A) and after annealing (2.45 cd/A) having a brightness 643 ...

  17. Electrically driven green, olivine, and amber color nanopyramid light emitting diodes.

    Science.gov (United States)

    Chang, Shih-Pang; Chang, Jet-Rung; Sou, Kuok-Pan; Liu, Mei-Chun; Cheng, Yuh-Jen; Kuo, Hao-Chung; Chang, Chun-Yen

    2013-10-07

    We report the fabrication and studies of electrically driven green, olivine, and amber color nanopyramid GaN light emitting diodes (LEDs). InGaN/GaN multiple quantum wells (MQWs) were grown on the nanopyramid semipolar facets. Compared with the commonly used (0001) c-plane MQWs, the semipolar facet has lower piezoelectric field, resulting in much faster radiative recombination efficiency. This is important for high In content MQWs. The measured internal quantum efficiencies for green, olivine, and amber color LED are 30%, 25%, and 21%, respectively. The radiative and non-radiative lifetime of the semipolar MQWs are also investigated.

  18. Enhanced Electroluminescent Efficiency Based on Functionalized Europium Complexes in Polymer Light-Emitting Diodes

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yong; WANG Lei; LI Chun; ZENG Wen-Jin; SHI Hua-Hong; CAO Yong

    2007-01-01

    Efficient red polymer light-emitting diodes are fabricated with the single active layer from the blends of poly (Nvinylcarbazole) (PVK) in the presence of 30wt.% electron-transporting compound 2-(4-biphenylyl)-5-(p-tertbutylphenyl)-1,3,4-oxadiazole (PBD) and europium complexes. The polyphenylene functionalized europium complex shows an enhanced electroluminescent efficiency due to the large site-isolation effect. For the polyphenylene functionalized europium complex, the maximum external quantum efficiency of 1.90% and luminous efficiency of 2.01 cd A-1 are achieved with emission peak at 612nm. The maximum brightness is more than 300cd m-2.

  19. Spectral variation of light-emitting diodes based on organic molecules doped polymer

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Organic light-emitting diodes based on naphthylimine-gallium complexes doped into a PPV derivative have been fabricated by a spin coating method.Color variation from green to blue with increase of the applied voltage has been observed.And the electroluminescent intensity of the blend samples is much stronger than that of the samples containing the complexes only.The results have been attributed to the variation of the recombination zone and the charge transfer between the materials.The process of the charge transport has been analyzed in detail.

  20. Phosphor-free white light-emitting diode with laterally distributed multiple quantum wells

    Science.gov (United States)

    Park, Il-Kyu; Kim, Ja-Yeon; Kwon, Min-Ki; Cho, Chu-Young; Lim, Jae-Hong; Park, Seong-Ju

    2008-03-01

    A phosphor-free white light-emitting diode (LED) was fabricated with laterally distributed blue and green InGaN /GaN multiple quantum wells (MQWs) grown by a selective area growth method. Photoluminescence and electroluminescence (EL) spectra of the LED showed emission peaks corresponding to the individual blue and green MQWs. The integrated EL intensity ratio of green to blue emission varied from 2.5 to 6.5 with the injection current below 300mA, but remained constant at high injection currents above 300mA. The stability of the emission color at high currents is attributed to parallel carrier injection into both MQWs.

  1. Study of compounds emitted during thermo-oxidative decomposition of polyester fabrics

    Directory of Open Access Journals (Sweden)

    Dzięcioł Małgorzata

    2016-03-01

    Full Text Available Compounds emitted during thermo-oxidative decomposition of three commercial polyester fabrics for indoor outfit and decorations (upholstery, curtains were studied. The experiments were carried out in a flow tubular furnace at 600°C in an air atmosphere. During decomposition process the complex mixtures of volatile and solid compounds were emitted. The main volatile products were carbon oxides, benzene, acetaldehyde, vinyl benzoate and acetophe-none. The emitted solid compounds consisted mainly of aromatic carboxylic acids and its derivatives, among which the greatest part took terephthalic acid, monovinyl terephthalate and benzoic acid. The small amounts of polycyclic aromatic hydrocarbons were also emitted. The emission profiles of the tested polyester fabrics were similar. The presence of toxic compounds indicates the possibility of serious hazard for people during fire.

  2. High-contrast top-emitting organic light-emitting devices

    Institute of Scientific and Technical Information of China (English)

    Chen Shu-Fen; Chen Chun-Yan; Yang Yang; Xie Jun; Huang Wei; Shi Hong-Ying; Cheng Fan

    2012-01-01

    In this paper we report on a high-contrast top-emitting organic light-emitting device utilizing a moderate-reflection contrast-enhancement stack and a high refractive index anti-reflection layer.The contrast-enhancement stack consists of a thin metal anode layer,a dielectric bilayer,and a thick metal underlayer.The resulting device,with the optimized contrast-enhancement stack thicknesses of Ni (30 nm)/MgF2 (62 nm)/ZnS (16 nm)/Ni (20 nm) and the 25-nm-thick ZnS anti-reflection layer,achieves a luminous reflectance of 4.01% in the visible region and a maximum current efficiency of 0.99 cd/A (at 62.3 mA/cm2) together with a very stable chromaticity.The contrast ratio reaches 561∶1 at an on-state brightness of 1000 cd/m2 under an ambient illumination of 140 lx.In addition,the anti-reflection layer can als0 enhance the transmissivity of the cathode and improve light out-coupling by the effective restraint of microcavity effects.

  3. A Novel White Light Emitting Long-lasting Phosphor

    Institute of Scientific and Technical Information of China (English)

    Bing Fu LEI; Ying Liang LIU; Ze Ren YE; Chun Shan SHI

    2004-01-01

    A novel white light emitting long-lasting phosphor Cd1-xDyxSiO3 is reported in this letter. The Dy3+ doped CdSiO3 phosphor emits white light. The phosphorescence can be seen with the naked eye in the dark clearly even after the 254 nm UV irradiation have been removed for about 30 min. In the emission spectrum of 5% Dy3+ doped CdSiO3 phosphor, there are two emission peaks of Dy3+, 580 nm (4F9/2→6H13/2) and 486 nm (4F9/2→6H15/2), as well as a broad band emission located at about 410 nm. All the three emissions form a white light with CIE chromaticity coordinates x=0.3874, y=0.3760 and the color temperature is 4000 K under 254 nm excitation. It indicated that this phosphor is a promising new luminescent material for practice application.

  4. Neodymium YAG lasers pumped by light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Bilak, V.I.; Goldobin, I.S.; Zverev, G.M.; Kuratev, I.I.; Pashkov, V.A.; Stel' makh, M.F.; Tsvetkov, Y.V.; Solov' eva, N.M.

    1981-11-01

    The results are presented of theoretical and experimental investigations of room-temperature YAG:Nd lasers pumped by light-emitting diodes. The lasing characteristics of a laser operated at the 1.06 and 1.32 ..mu.. wavelengths were investigated in the cw and pulsed regimes and dependences of its parameters on the temperature, pulse repetition frequency, and other factors were studied. In the pulsed regime the laser efficiency was 0.2% and in the cw regime the radiation power reached 50 and 17 mW at the 1.06 and 1.32 ..mu.. wavelengths, respectively.

  5. Numerical model of multilayer organic light-emitting devices

    Institute of Scientific and Technical Information of China (English)

    Hu Yue; Rao Hai-Bo

    2009-01-01

    A numerical model of multilayer organic light-emitting devices is presented in this article.This model is based on the drift-diffusion equations which include charge injection,transport,space charge effects,trapping,heterojunction interface and recombination process.The device structure in the simulation is ITO/CuPc(20 nm)/NPD(40 nm)/Alq3(60 nm)/LiF/Al.There are two heterojunctions which should be dealt with in the simulation.The Ⅰ-Ⅴ characteristics,carrier distribution and recombination rate of a device are calculated.The simulation results and measured data are in good agreement.

  6. Dispositivos poliméricos eletroluminescentes Polymeric light emitting devices

    Directory of Open Access Journals (Sweden)

    Hueder P. M. de Oliveira

    2006-04-01

    Full Text Available Here we present an overview of electroluminescent devices that use conjugated polymers as the active media. The principal components of the devices are described and we show some examples of conjugated polymers and copolymers usually employed in polymeric light emitting devices (PLED. Some aspects of the photo and electroluminescence properties as well as of the energy transfer processes are discussed. As an example, we present some of the photophysical properties of poly(fluorenes, a class of conjugated polymers with blue emission.

  7. Capturing triplet emission in white organic light emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Jai [Faculty of EHSE, School of Engineering and IT, B-purple-12, Charles Darwin University, Darwin, NT 0909 (Australia)

    2011-08-15

    The state-of-the art in the white organic light emitting devices (WOLEDs) is reviewed for further developments with a view to enhance the capture of triplet emission. In particular, applying the new exciton-spin-orbit-photon interaction operator as a perturbation, rates of spontaneous emission are calculated in a few phosphorescent materials and compared with experimental results. For iridium based phosphorescent materials the rates agree quite well with the experimental results. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Camera vibration measurement using blinking light-emitting diode array.

    Science.gov (United States)

    Nishi, Kazuki; Matsuda, Yuichi

    2017-01-23

    We present a new method for measuring camera vibrations such as camera shake and shutter shock. This method successfully detects the vibration trajectory and transient waveforms from the camera image itself. We employ a time-varying pattern as the camera test chart over the conventional static pattern. This pattern is implemented using a specially developed blinking light-emitting-diode array. We describe the theoretical framework and pattern analysis of the camera image for measuring camera vibrations. Our verification experiments show that our method has a detection accuracy and sensitivity of 0.1 pixels, and is robust against image distortion. Measurement results of camera vibrations in commercial cameras are also demonstrated.

  9. White Electroluminescence Using ZnO Nanotubes/GaN Heterostructure Light-Emitting Diode

    Directory of Open Access Journals (Sweden)

    Sadaf JR

    2010-01-01

    Full Text Available Abstract We report the fabrication of heterostructure white light–emitting diode (LED comprised of n-ZnO nanotubes (NTs aqueous chemically synthesized on p-GaN substrate. Room temperature electroluminescence (EL of the LED demonstrates strong broadband white emission spectrum consisting of predominating peak centred at 560 nm and relatively weak violet–blue emission peak at 450 nm under forward bias. The broadband EL emission covering the whole visible spectrum has been attributed to the large surface area and high surface states of ZnO NTs produced during the etching process. In addition, comparison of the EL emission colour quality shows that ZnO nanotubes have much better quality than that of the ZnO nanorods. The colour-rendering index of the white light obtained from the nanotubes was 87, while the nanorods-based LED emit yellowish colour.

  10. Recent progress in single chip white light-emitting diodes with the InGaN underlying layer

    Science.gov (United States)

    Wang, Xiaoli; Wang, Xiaohui; Jia, Haiqiang; Xing, Zhigang; Chen, Hong

    2010-03-01

    Tremendous progress has been achieved in white light-emitting diodes (LEDs). To further improve the quality of white light and simplify the fabrication process, a single chip white-light LED with the InGaN underlying layer (UL) was studied and fabricated. The turn-on voltage of this type of LED was 2.7 V, and the spectrum at a forward bias current of 20 mA was comprised of blue (443 nm) and yellow (563 nm) lights. The intensity ratio of blue to yellow light was almost constant with the increasing injection current in a certain scope, most important for the solid state illumination. The useful life test showed the light output level remained at a 90% light output level at the driving current of 40 mA after 300 h, meanwhile, the UV and blue LEDs combined with phosphor reached a 20% value after 144 h within 300 h.

  11. Recent progress in single chip white light-emitting diodes with the InGaN underlying layer

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Tremendous progress has been achieved in white light-emitting diodes (LEDs). To further improve the quality of white light and simplify the fabrication process, a single chip white-light LED with the InGaN underlying layer (UL) was studied and fabricated. The turn-on voltage of this type of LED was 2.7 V, and the spectrum at a forward bias current of 20 mA was comprised of blue (443 nm) and yellow (563 nm) lights. The intensity ratio of blue to yellow light was almost constant with the in- creasing injection current in a certain scope, most important for the solid state illumination. The useful life test showed the light output level remained at a 90% light output level at the driving current of 40 mA after 300 h, meanwhile, the UV and blue LEDs combined with phosphor reached a 20% value after 144 h within 300 h.

  12. Polystyrene-catalytic indium-tin-oxide nanorods grown on green light-emitting diodes for enhancing light extraction

    Science.gov (United States)

    Gong, Zhina; Li, Qiang; Li, Yufeng; Xiong, Han; Liu, Hao; Wang, Shuai; Zhang, Ye; Guo, Maofeng; Yun, Feng

    2016-08-01

    A novel technique for fabricating indium-tin-oxide (ITO) nanorods (NRs) on hexagonal-pyramid-surface green vertical light-emitting diodes (VLEDs) is demonstrated using electron-beam deposition with polystyrene spheres catalysis. The ITO NRs have high optical transmittance (>90%) in green wavelength and good crystal quality with a cubic structure. The VLED with ITO NRs has a 31% enhancement of light output power at 200 mA, compared with those without ITO NRs. Finite-difference time-domain simulations suggest that the power enhancement is attributed to the gradient refractive indices of the ITO NRs, and that the light extraction enhancement is caused by changes in ITO NR heights.

  13. A facile method to enhance out-coupling efficiency in organic light-emitting diodes via a random-pyramids textured layer

    Science.gov (United States)

    Zhu, Wenqing; Xiao, Teng; Zhai, Guangsheng; Yu, Jingting; Shi, Guanjie; Chen, Guo; Wei, Bin

    2016-09-01

    We demonstrate a facile method to enhance light extraction in organic light-emitting diodes using a polymer layer with a texture consisting of random upright pyramids. The simple fabrication technique of the textured layer is based on silicon alkali-etching and imprint lithography. With the textured layer applied to the external face of the glass substrate, the organic light-emitting diode achieved a 26% enhancement of current efficiency and a 30% enhancement of power efficiency without spectral distortion over wide viewing angles. A ray-tracing optical simulation reveals that the textured layer can alter the traveling path of light and assist in out-coupling a large portion of light delivered into the substrate. The proposed method is a promising approach for achieving enhanced efficiency organic light-emitting diodes for the simple fabrication process and the effective light extraction.

  14. Photoluminescence and carrier transport mechanisms of silicon-rich silicon nitride light emitting device

    Energy Technology Data Exchange (ETDEWEB)

    Liao, Wugang [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Zeng, Xiangbin, E-mail: eexbzeng@mail.hust.edu.cn [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Yao, Wei [Shenzhen Institute of Huazhong University of Science and Technology, Shenzhen 518000 (China); Wen, Xixing [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)

    2015-10-01

    Highlights: • Amorphous silicon quantum dots (a-Si QDs) embedded in silicon nitride were fabricated using plasma-enhanced chemical vapor deposition (PECVD). • Two different excitation sources were used to investigate the PL mechanisms. • Light emitting diode (LED) with ITO/SiNx/p-Si/Al structure was fabricated and the carrier transport mechanisms were investigated. - Abstract: Silicon-rich silicon nitride (SRSN) films were prepared on p-type silicon substrates using plasma-enhanced chemical vapor deposition (PECVD). Small size (∼3 nm) amorphous silicon quantum dots (a-Si QDs) were obtained after 1100 °C annealing. Two different excitation sources, namely 325 nm and 532 nm lasers, were introduced to investigate the photoluminescence (PL) properties. The PL bands pumped by 325 nm laser at ∼2.90 eV and ∼1.80 eV were contributed to the radiative centers from N dangling bonds (DBs), while the dominant PL bands at 2.10 eV were ascribed to the instinct PL centers in the nitride matrix. However, PL emissions from band tail luminescence and quantum confined effect (QCE) in a-Si QDs were found under the excitation of 532 nm laser. Light emitting diode (LED) with ITO/SiNx/p-Si/Al structure was fabricated. Intensely red light emission was observed by naked eyes at room temperature under forward 20 V. Three different carrier transport mechanisms, namely Poole–Frenkel (P–F) tunneling, Fowler–Nordheim (F–N) tunneling and space charge limited current (SCLC), were found to fit different electric field regions. These results help to understand the PL mechanisms and to optimize the fabrication of a-Si QD LED.

  15. Investigation of high extraction efficiency flip-chip GaN-based light-emitting diodes

    Institute of Scientific and Technical Information of China (English)

    DA XiaoLi; SHEN GuangDi; XU Chen; ZOU DeShu; ZHU YanXu; ZHANG JianMing

    2009-01-01

    In order to obtain higher light output power, the flip-chip structure Is used. We studied the ratio of the light of GaN sides before and after fabricating metal reflector on p-GaN. The SiO2/SiNx dielectric film reflectors were deposited through plasma enhance chemical vapor deposition following the fabrication of metal reflector, and then the dielectric film reflectors on the electrodes were etched in order to expose the electrodes to the air. It is found that comparing with the flip-chip GaN-LED without dielectric film reflectors, light output power can be increased by as high as 10.2% after the deposition of 2 pairs of SiO2/SiNx dielectric film reflectors on GaN-LEDs, which cover the sidewalls and the areas without the metal reflector. This result indicates that the high reflector formed by multi-layer dielectric films is useful to enhance the light output power of GaN-based LED, which reflects light from step sidewalls and p-GaN without metal reflector to internal, and then light emits from the surface.

  16. Organic Light-Emitting Device Based on Terbium Complex

    Institute of Scientific and Technical Information of China (English)

    Xu Ying; Deng Zhenbo; Xu Denghui; Xiao Jing; Wang Ruifen

    2005-01-01

    A new rare earth complex Tb(p-MBA)3phen was synthesized, which is first used as an emitting material in organic electroluminescence. By doping it into the conjugated polymer PVK, single-layer and double-layer devices were fabricated with structures: device 1: ITO/PVK∶ Tb(p-MBA)3phen/Al; device 2∶ ITO/PVK: Tb(p-MBA)3phen/AlQ/LiF/Al. The characteristics of these devices have been investigated. The emission of PVK is completely restrained, and only the pure green emission from Tb3+ can be observed in electroluminescence. The optimized device 2 has better monochromatic characteristics with the maximal brightness of 152 cd · m-2 at the voltage of 20 V.

  17. Fivefold enhancement in stability of organic light-emitting diodes with addition of non-evaporable getter pumps

    Science.gov (United States)

    Le, Duy C.; Oyama, Shiho; Sakai, Heisuke; Porcelli, Tommaso; Siviero, Fabrizio; Maccallini, Enrico; Urbano, Marco; Murata, Hideyuki

    2017-07-01

    We demonstrate a significant enhancement of the operational stability of organic light-emitting diodes (OLEDs) by fabricating the devices under ultrahigh-vacuum (UHV) conditions in the region of 10-10-10-11 Torr. The UHV condition is achieved by utilizing non-evaporable getter pumps together with regular turbo molecular pumps in an OLED deposition chamber. The short-term stability of the OLEDs is prolonged fivefold because of the removal of detrimental gases, especially water. We suggest that ultra-clean fabrication conditions are indispensable for revealing the true intrinsic degradation mode of OLEDs. Additionally, we analyze the effect of operating residual gas analyzers during the device fabrication.

  18. The application of multispectral light detectors to gauge detonative events by means of their emitted light signature

    CSIR Research Space (South Africa)

    Olivier, Marius

    2016-09-01

    Full Text Available It is well known that reacting explosives emit light of varying intensity across the light spectrum. Measurement of this emitted light could have many applications, i.a. the creation of a database of characteristic light signatures at specific...

  19. Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming

    Science.gov (United States)

    Li, Ting

    2013-08-13

    The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior to applying a reactive ion etch process. The submicron patterns in the metal hard-mask can be formed using a low cost, commercially available nano-patterned template which is transferred to the surface with the mask. After subsequently binding the mask to the surface, the template is removed and the RIE process is applied for time duration sufficient to change the morphology of the surface. The modified surface contains non-symmetric, submicron structures having high aspect ratio which increase the efficiency of the device.

  20. Multicolored Nanofiber Based Organic Light-Emitting Transistor

    DEFF Research Database (Denmark)

    With Jensen, Per Baunegaard; Kjelstrup-Hansen, Jakob; Tavares, Luciana

    For optoelectronic applications, organic semiconductors have several advantages over their inorganic counterparts such as facile synthesis, tunability via synthetic chemistry, and low temperature processing. Self-assembled, molecular crystalline nanofibers are of particular interest as they could...... form ultra-small light-emitters in future nanophotonic applications. Such organic nanofibers exhibit many interesting optical properties including polarized photo- and electroluminescence, waveguiding, and emission color tunability. We here present a first step towards a multicolored, electrically...... driven device by combining nanofibers made from two different molecules, parahexaphenylene (p6P) and 5,5´-Di-4-biphenyl-2,2´-bithiophene (PPTTPP), which emits blue and green light, respectively. The organic nanofibers are implemented on a bottom gate/bottom contact field-effect transistor platform using...

  1. Characterization, Modeling, and Optimization of Light-Emitting Diode Systems

    DEFF Research Database (Denmark)

    Thorseth, Anders

    This thesis explores, characterization, modeling, and optimization of light-emitting diodes (LED) for general illumination. An automated setup has been developed for spectral radiometric characterization of LED components with precise control of the settings of forward current and operating...... comparing the chromaticity of the measured SPD with tted models, the deviation is found to be larger than the lower limit of human color perception. A method has been developed to optimize multicolored cluster LED systems with respect to light quality, using multi objective optimization. The results...... temperature. The automated setup has been used to characterize commercial LED components with respect to multiple settings. It is shown that the droop in quantum efficiency can be approximated by a simple parabolic function. The investigated models of the spectral power distributions (SPD) from LEDs...

  2. Multicolored Nanofiber Based Organic Light-Emitting Transistor

    DEFF Research Database (Denmark)

    With Jensen, Per Baunegaard; Kjelstrup-Hansen, Jakob; Tavares, Luciana

    For optoelectronic applications, organic semiconductors have several advantages over their inorganic counterparts such as facile synthesis, tunability via synthetic chemistry, and low temperature processing. Self-assembled, molecular crystalline nanofibers are of particular interest as they could...... form ultra-small light-emitters in future nanophotonic applications. Such organic nanofibers exhibit many interesting optical properties including polarized photo- and electroluminescence, waveguiding, and emission color tunability. We here present a first step towards a multicolored, electrically...... driven device by combining nanofibers made from two different molecules, parahexaphenylene (p6P) and 5,5´-Di-4-biphenyl-2,2´-bithiophene (PPTTPP), which emits blue and green light, respectively. The organic nanofibers are implemented on a bottom gate/bottom contact field-effect transistor platform using...

  3. Chemically Addressable Perovskite Nanocrystals for Light-Emitting Applications

    KAUST Repository

    Sun, Haizhu

    2017-07-10

    Whereas organic–inorganic hybrid perovskite nanocrystals (PNCs) have remarkable potential in the development of optoelectronic materials, their relatively poor chemical and colloidal stability undermines their performance in optoelectronic devices. Herein, this issue is addressed by passivating PNCs with a class of chemically addressable ligands. The robust ligands effectively protect the PNC surfaces, enhance PNC solution processability, and can be chemically addressed by thermally induced crosslinking or radical-induced polymerization. This thin polymer shield further enhances the photoluminescence quantum yields by removing surface trap states. Crosslinked methylammonium lead bromide (MAPbBr3) PNCs are applied as active materials to build light-emitting diodes that have low turn-on voltages and achieve a record luminance of over 7000 cd m−2, around threefold better than previous reported MA-based PNC devices. These results indicate the great potential of this ligand passivation approach for long lifespan, highly efficient PNC light emitters.

  4. Quantum key distribution with an entangled light emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Dzurnak, B.; Stevenson, R. M.; Nilsson, J.; Dynes, J. F.; Yuan, Z. L.; Skiba-Szymanska, J.; Shields, A. J. [Toshiba Research Europe Limited, 208 Science Park, Milton Road, Cambridge CB4 0GZ (United Kingdom); Farrer, I.; Ritchie, D. A. [Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom)

    2015-12-28

    Measurements performed on entangled photon pairs shared between two parties can allow unique quantum cryptographic keys to be formed, creating secure links between users. An advantage of using such entangled photon links is that they can be adapted to propagate entanglement to end users of quantum networks with only untrusted nodes. However, demonstrations of quantum key distribution with entangled photons have so far relied on sources optically excited with lasers. Here, we realize a quantum cryptography system based on an electrically driven entangled-light-emitting diode. Measurement bases are passively chosen and we show formation of an error-free quantum key. Our measurements also simultaneously reveal Bell's parameter for the detected light, which exceeds the threshold for quantum entanglement.

  5. Electroluminescence property of organic light emitting diode (OLED)

    Energy Technology Data Exchange (ETDEWEB)

    Özdemir, Orhan; Kavak, Pelin; Saatci, A. Evrim; Gökdemir, F. Pınar; Menda, U. Deneb; Can, Nursel; Kutlu, Kubilay [Yıldız Technical University, Department of Physics, Esenler, Istanbul (Turkey); Tekin, Emine; Pravadalı, Selin [National Metrology Instıtute of Turkey (TUBİTAK-UME), Kocaeli (Turkey)

    2013-12-16

    Transport properties of electrons and holes were investigated not only in a anthracene-containing poly(p-phenylene-ethynylene)- alt - poly(p-phenylene-vinylene) (PPE-PPV) polymer (AnE-PVstat) light emitting diodes (OLED) but also in an ITO/Ag/polymer/Ag electron and ITO/PEDOT:PSS/polymer/Au hole only devices. Mobility of injected carriers followed the Poole-Frenkel type conduction mechanism and distinguished in the frequency range due to the difference of transit times in admittance measurement. Beginning of light output took place at the turn-on voltage (or flat band voltage), 1.8 V, which was the difference of energy band gap of polymer and two barrier offsets between metals and polymer.

  6. The effects of light-emitting diode lighting on greenhouse plant growth and quality

    Directory of Open Access Journals (Sweden)

    Margit Olle

    2013-06-01

    Full Text Available The aim of this study is to present the light emitting diode (LED technology for greenhouse plant lighting and to give an overview about LED light effects on photosynthetic indices, growth, yield and nutritional value in green vegetables and tomato, cucumber, sweet pepper transplants. The sole LED lighting, applied in closed growth chambers, as well as combinations of LED wavelengths with conventional light sources, fluorescent and high pressure sodium lamp light, and natural illumination in greenhouses are overviewed. Red and blue light are basal in the lighting spectra for green vegetables and tomato, cucumber, and pepper transplants; far red light, important for photomorphogenetic processes in plants also results in growth promotion. However, theoretically unprofitable spectral parts as green or yellow also have significant physiological effects on investigated plants. Presented results disclose the variability of light spectral effects on different plant species and different physiological indices.

  7. New Framework of Sustainable Indicators for Outdoor LED (Light Emitting Diodes) Lighting and SSL (Solid State Lighting)

    OpenAIRE

    2015-01-01

    Light emitting diodes (LEDs) and SSL (solid state lighting) are relatively new light sources, but are already widely applied for outdoor lighting. Despite this, there is little available information allowing planners and designers to evaluate and weigh different sustainability aspects of LED/SSL lighting when making decisions. Based on a literature review, this paper proposes a framework of sustainability indicators and/or measures that can be used for a general evaluation or to highlight ce...

  8. Using nanoimprint lithography to improve the light extraction efficiency and color rendering of dichromatic white light-emitting diodes

    Science.gov (United States)

    Lee, Yang-Chun; Chen, Hsuen-Li; Lu, Chih-Yu; Wu, Hung-Sen; Chou, Yung-Fang; Chen, Szu-Huang

    2015-10-01

    Despite the efficiency of gallium nitride (GaN)-based blue light-emitting diodes (LEDs), the light extraction arising from the packaging of the phosphor remains an important issue when enhancing the performance of dichromatic white LEDs. In this study, we employed a simple, inexpensive nanoimprinting process to increase both the light extraction efficiency and color rendering of dichromatic white LEDs. We employed the rigorous coupled wave approach (RCWA) to optimize the light extraction efficiency of yellow and blue light. We found that the presence of the light extracting structures could also improve the color rendering of the dichromatic white LEDs, due to the different light extraction efficiencies of the textured structures at different wavelengths. After fabricating inverted pyramid structures on the surface of the encapsulation layer, the intensity of the blue light at 455 nm increased by 20%. When we further considered the color rendering and correlated color temperature (CCT), the enhancement of blue light was 15% and that of yellow light was 4%. Meanwhile, the light extraction of the intensity dip near 490 nm was enhanced significantly (by 25%), resulting in an increased dip-intensity of light at 490 nm relative to the intensities of the blue and yellow light. Accordingly, the color rendering index (CRI) of this dichromatic white LED increased from 69 to 73. Because it improved both the light extraction efficiency and color rendering of dichromatic white LEDs, this simple method should be very helpful for enhancing their applications in solid state illumination.Despite the efficiency of gallium nitride (GaN)-based blue light-emitting diodes (LEDs), the light extraction arising from the packaging of the phosphor remains an important issue when enhancing the performance of dichromatic white LEDs. In this study, we employed a simple, inexpensive nanoimprinting process to increase both the light extraction efficiency and color rendering of dichromatic white

  9. Enhancement of efficiencies for tandem green phosphorescent organic light-emitting devices with a p-type charge generation layer

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Byung Soo; Jeon, Young Pyo; Lee, Dae Uk; Kim, Tae Whan, E-mail: twk@hanayng.ac.kr

    2014-10-15

    The operating voltage of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was improved by 3% over that of the organic light-emitting device with a molybdenum trioxide layer. The maximum brightness of the tandem green phosphorescent organic light-emitting device at 21.9 V was 26,540 cd/m{sup 2}. The dominant peak of the electroluminescence spectra for the devices was related to the fac-tris(2-phenylpyridine) iridium emission. - Highlights: • Tandem OLEDs with CGL were fabricated to enhance their efficiency. • The operating voltage of the tandem OLED with a HAT-CN layer was improved by 3%. • The efficiency and brightness of the tandem OLED were 13.9 cd/A and 26,540 cd/m{sup 2}. • Efficiency of the OLED with a HAT-CN layer was lower than that with a MoO{sub 3} layer. - Abstract: Tandem green phosphorescent organic light-emitting devices with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile or a molybdenum trioxide charge generation layer were fabricated to enhance their efficiency. Current density–voltage curves showed that the operating voltage of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was improved by 3% over that of the corresponding organic light-emitting device with a molybdenum trioxide layer. The efficiency and the brightness of the tandem green phosphorescent organic light-emitting device were 13.9 cd/A and 26,540 cd/m{sup 2}, respectively. The current efficiency of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was lower by 1.1 times compared to that of the corresponding organic light-emitting device with molybdenum trioxide layer due to the decreased charge generation and transport in the 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer resulting from triplet–triplet exciton annihilation.

  10. Highly efficient light-emitting diodes based on intramolecular rotation

    CERN Document Server

    Di, Dawei; Yang, Le; Jones, Saul; Friend, Richard H; Linnolahti, Mikko; Bochmann, Manfred; Credgington, Dan

    2016-01-01

    The efficiency of an organic light-emitting diode (OLED) is fundamentally governed by the spin of recombining electron-hole pairs (singlet and triplet excitons), since triplets cannot usually emit light. The singlet-triplet energy gap, a key factor for efficient utilization of triplets, is normally positive. Here we show that in a family of materials with amide donor and carbene acceptor moieties linked by a metal, this energy gap for singlet and triplet excitons with charge-transfer character can be tuned from positive to negative values via the rotation of donor and acceptor about the metal-amide bond. When the gap is close to zero, facile intersystem crossing is possible, enabling efficient emission from singlet excitons. We demonstrate solution-processed LEDs with exceptionally high quantum efficiencies (near-100% internal and >27% external quantum efficiencies), and current and power efficiencies (87 cd/A and 75 lm/W) comparable to, or exceeding, those of state-of-the-art vacuum-processed OLEDs and quant...

  11. New Optoelectronic Technology Simplified for Organic Light Emitting Diode (OLED

    Directory of Open Access Journals (Sweden)

    Andre F. S. Guedes

    2014-06-01

    Full Text Available The development of Organic Light Emitting Diode (OLED, using an optically transparent substrate material and organic semiconductor materials, has been widely utilized by the electronic industry when producing new technological products. The OLED are the base Poly (3,4-ethylenedioxythiophene, PEDOT, and Polyaniline, PANI, were deposited in Indium Tin Oxide, ITO, and characterized by UV-Visible Spectroscopy (UV-Vis, Optical Parameters (OP and Scanning Electron Microscopy (SEM. In addition, the thin film obtained by the deposition of PANI, prepared in perchloric acid solution, was identified through PANI-X1. The result obtained by UV-Vis has demonstrated that the Quartz/ITO/PEDOT/PANI-X1 layer does not have displacement of absorption for wavelengths greaters after spin-coating and electrodeposition. Thus, the spectral irradiance of the OLED informed the irradiance of 100 W/m2, and this result, compared with the standard Light Emitting Diode (LED, has indicated that the OLED has higher irradiance. After 1000 hours of electrical OLED tests, the appearance of nanoparticles visible for images by SEM, to the migration process of organic semiconductor materials, was present, then. Still, similar to the phenomenon of electromigration observed in connections and interconnections of microelectronic devices, the results have revealed a new mechanism of migration, which raises the passage of electric current in OLED.

  12. Organic Light Emitting Diodes Using Doped Alq3 as the Hole-transport Layer

    Institute of Scientific and Technical Information of China (English)

    LIANG Chun-Jun; WANG Yang; YI Li-Xin

    2008-01-01

    EFfects of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) doping on the hole conductivity of Alq3 layer are measured.In the hole-only device of Alq3,the current densities increase in 1-3 orders of magnitude upon doping with F4TCNQ,suggesting that the doping can effectively enhance the hole-injection and holetransport ability of Alq3.An organic light-emitting device using an F4TCNQ doped Alq3 layer as the holeinjection and hole-transport layer,and pristine Alq3 as the electron-transport and emitting layer is fabricated and characterized.Bright emission is achieved in the simple OLED with p-doped Alqa as the hole-transport layer and the intrinsic Alq3 as the electron-transport and emitting layer.The emitting efficiency and brightness of the device are further improved by inserting a thin electron block layer to confine the carrier recombination zone in the middle of the organic layers.

  13. Synthesis, characterization and properties of novel blue light emitting discrete π-functional polymer consisting of carbazole and anthracene units and their applications in polymer light emitting diodes

    Science.gov (United States)

    Gopal, Ram; Huang, Yi-Chiang; Lee, Hsu-Feng; Chang, Ming-Sien; Huang, Wen-Yao

    2017-03-01

    A new novel blue light emitting polymer containing carbazole and anthracene derivatives has been successfully synthesized via polycondensation chemical reaction of diol and difluoro monomers. An effort has been made to raise the band gap of blue light emitter by lowering the conjugation extent in the backbone. The synthesized blue polymer exhibits decent solubility, good process ability, high thermal stability, high glass transition temperature (272 °C) and the decomposition temperature of 358 °C. The UV-vis absorption spectra and photoluminescence spectra depict that the light emission lies in blue region. The solid state photoluminescence (PL) spectra of the polymer (λPL=456 nm) shows red shift (Δλ = 37 nm) as compared with the corresponding solution PL spectra, presumably due to lower intermolecular distance in solid state. The multi-layered polymer light emitting diode was fabricated, using blue polymer with ITO/PEDOT: PSS/BP/LiF/Al architecture. The luminance-voltage (L-V) and current density-voltage (J-V) curves show a maximum luminance of 7544 cd m-2, a maximum emission efficiency of 4.2 cd A-1, a maximum current density of 453 mA cm-2 at a turn-on voltage of 4.5 V. Moreover, the PLED instigate pure blue EL emission, stable at 436 nm with outstanding CIE coordinates of (x = 0.15, y = 0.08), which is close to the pure NTSC blue coordinates of (0.14, 0.08). [Figure not available: see fulltext.

  14. Efficient Hybrid White Organic Light-Emitting Diodes for Application of Triplet Harvesting with Simple Structure

    CERN Document Server

    Hwang, Kyo Min; Lee, Sungkyu; Yoo, Han Kyu; Baek, Hyun Jung; Kim, Jwajin; Yoon, Seung Soo; Kim, Young Kwan

    2016-01-01

    In this study, we fabricated hybrid white organic light-emitting diodes (WOLEDs) based on triplet harvesting with simple structure. All the hole transporting material and host in emitting layer (EML) of devices were utilized with same material by using N,N'-di-1-naphthalenyl-N,N'-diphenyl-[1,1':4',1":4",1"'-quaterphenyl]-4,4"'-diamine (4P-NPD) which were known to be blue fluorescent material. Simple hybrid WOLEDs were fabricated three color with blue fluorescent and green, red phosphorescent materials. We was investigated the effect of triplet harvesting (TH) by exciton generation zone on simple hybrid WOLEDs. Characteristic of simple hybrid WOLEDs were dominant hole mobility, therefore exciton generation zone was expected in EML. Additionally, we was optimization thickness of hole transporting layer and electron transporting layer was fabricated a simple hybrid WOLEDs. Simple hybrid WOLED exhibits maximum luminous efficiency of 29.3 cd/A and maximum external quantum efficiency of 11.2%. Commission Internatio...

  15. One-step Double-layer Thermal Evaporation Method for Organic Light Emitting Diodes

    Science.gov (United States)

    Kee, Y. Y.; Yong, T. K.; Ong, D. S.; Tou, T. Y.

    2011-03-01

    A new one-step double-layer thermal evaporation method was used to fabricate organic light emitting diodes (OLEDs) with device structure of: ITO (anode)/N,N_-diphenyl-N,N_-bis(3-methylphenyl)-1,1_-diphenyl-4,4_-diamine (TPD) /tris-(8-hydroxyquinoline)aluminum(3) (Alq3)/Al (cathode). These OLEDs were fabricated in cleanroom on the ITO-coated glass with a sheet resistivity of 20Ω/sq and an optical transmittance of 90%. The I-V and brightness characteristic showed that the new method could produce better performance achieving lower turn-on voltage (-2V), higher peak current efficiency (+29%) and higher brightness (+36%).

  16. Solution processed organic light-emitting diodes using the plasma cross-linking technology

    Science.gov (United States)

    He, Kongduo; Liu, Yang; Gong, Junyi; Zeng, Pan; Kong, Xun; Yang, Xilu; Yang, Cheng; Yu, Yan; Liang, Rongqing; Ou, Qiongrong

    2016-09-01

    Solution processed multilayer organic light-emitting diodes (OLEDs) present challenges, especially regarding dissolution of the first layer during deposition of a second layer. In this work, we first demonstrated a plasma cross-linking technology to produce a solution processed OLED. The surfaces of organic films can be cross-linked after mixed acetylene and Ar plasma treatment for several tens of seconds and resist corrosion of organic solvent. The film thickness and surface morphology of emissive layers (EMLs) with plasma treatment and subsequently spin-rinsed with chlorobenzene are nearly unchanged. The solution processed triple-layer OLED is successfully fabricated and the current efficiency increases 50% than that of the double-layer OLED. Fluorescent characteristics of EMLs are also observed to investigate factors influencing the efficiency of the triple-layer OLED. Plasma cross-linking technology may open up a new pathway towards fabrication of all-solution processed multilayer OLEDs and other soft electronic devices.

  17. Light-emitting diode-generated red light inhibits keloid fibroblast proliferation.

    Science.gov (United States)

    Mamalis, Andrew; Jagdeo, Jared

    2015-01-01

    Red light is part of the visible light spectrum that does not generate DNA adducts associated with skin cancer and photoaging and may represent a safer therapeutic modality for treatment of keloid scars and other fibrotic skin diseases. Our laboratory previously demonstrated that light-emitting diode-generated red light (LED-RL) inhibits proliferation of skin fibroblasts. The effects of LED-RL on keloidal skin are not well characterized. To determine the effect of LED-RL on keloid-derived fibroblast proliferation and viability in vitro. Irradiation of primary keloid-derived human skin fibroblasts using LED-RL panels was performed in vitro, and modulation of proliferation and viability was quantified using trypan blue dye exclusion assay. Statistical analysis was performed using analysis of variance to compare treatment arms and the Student t-test to compare each treatment arm with the paired bench control arm. Keloid fibroblasts treated with LED-RL 240, 320, and 480 J/cm demonstrated statistically significant dose-dependent decreases in relative proliferation rate of 12.4%, 16.5%, and 28.9%, respectively, compared with matched nonirradiated controls (p Light-emitting diode-generated red light can inhibit keloid fibroblast proliferation in a dose-dependent manner without altering viability. Light-emitting diode-generated red light has the potential to contribute to the treatment of keloids and other fibrotic skin diseases and is worthy of further translational and clinical investigation.

  18. Simulation of mixed-host emitting layer based organic light emitting diodes

    Science.gov (United States)

    Riku, C.; Kee, Y. Y.; Ong, T. S.; Yap, S. S.; Tou, T. Y.

    2015-04-01

    `SimOLED' simulator is used in this work to investigate the efficiency of the mixed-host organic light emitting devices (MH-OLEDs). Tris-(8-hydroxyquinoline) aluminum(3) (Alq3) and N,N-diphenyl-N,N-Bis(3-methylphenyl)-1,1-diphenyl-4,4-diamine (TPD) are used as the electron transport layer (ETL) material and hole transport layer (HTL) material respectively, and the indium-doped tin oxide (ITO) and aluminum (Al) as anode and cathode. Three MH-OLEDs, A, B and C with the same structure of ITO / HTM (15 nm) / Mixed host (70 nm) / ETM (10 nm) /Al, are stimulated with ratios TPD:Alq3 of 3:5, 5:5, and 5:3 respectively. The Poole-Frenkel model for electron and hole mobilities is employed to compute the current density-applied voltage-luminance characteristics, distribution of the electric field, carrier concentrations and recombination rate.

  19. High Efficiency SEPIC Converter For High Brightness Light Emitting Diodes (LEDs) System

    OpenAIRE

    Qin, Yaxiao

    2012-01-01

    ABSTRACT This thesis presents an investigation into the characteristics of and driving methods for light emitting diode (LED) lamp system. A comprehensive overview on the lighting development is proposed. The characteristic of the light emitting diode (LED) lamp is described and the requirements of the ballast for the light emitting diode (LED) lamp are presented. Although LED lamps have longer lifetime than fluorescent lamps, the short lifetime limitation of LED driver imposed by ele...

  20. An experimental investigation of a 100-W high-power light-emitting diode array using vapor chamber–based plate

    OpenAIRE

    Ping Zhang; Jianhua Zeng; Xianping Chen; Miao Cai; Jing Xiao; Daoguo Yang

    2015-01-01

    In this study, a compact 100-W input power light-emitting diode array vapor chamber–based plate has been fabricated to investigate the thermal performance. To make a comparison, a typical commercial chip on board–type light-emitting diode array using a copper-based plate which has the same chip layout and the same power input was also investigated. The surface temperature distribution and total thermal resistance corresponding to these two high-power light-emitting diode modules were measured...

  1. Colour tuning in white hybrid inorganic/organic light-emitting diodes

    Science.gov (United States)

    Bruckbauer, Jochen; Brasser, Catherine; Findlay, Neil J.; Edwards, Paul R.; Wallis, David J.; Skabara, Peter J.; Martin, Robert W.

    2016-10-01

    White hybrid inorganic/organic light-emitting diodes (LEDs) were fabricated by combining a novel organic colour converter with a blue inorganic LED. An organic small molecule was specifically synthesised to act as down-converter. The characteristics of the white colour were controlled by changing the concentration of the organic molecule based on the BODIPY unit, which was embedded in a transparent matrix, and volume of the molecule and encapsulant mixture. The concentration has a critical effect on the conversion efficiency, i.e. how much of the absorbed blue light is converted into yellow light. With increasing concentration the conversion efficiency decreases. This quenching effect is due to aggregation of the organic molecule at higher concentrations. Increasing the deposited amount of the converter does not increase the yellow emission despite more blue light being absorbed. Degradation of the organic converter was also observed during a period of 15 months from LED fabrication. Angular-dependent measurements revealed slight deviation from a Lambertian profile for the blue and yellow emission peaks leading to a small change in ‘whiteness’ with emission angle. Warm white and cool white light with correlated colour temperatures of 2770 K and 7680 K, respectively, were achieved using different concentrations of the converter molecule. Although further work is needed to improve the lifetime and poor colour rendering, these hybrid LEDs show promising results as an alternative approach for generating white LEDs compared with phosphor-based white LEDs.

  2. Comparison of organic light emitting diodes with different mixed layer structures

    Energy Technology Data Exchange (ETDEWEB)

    Kee, Y.Y.; Siew, W.O. [Faculty of Engineering, Multimedia University, 63100 Cyberjaya (Malaysia); Yap, S.S. [Faculty of Engineering, Multimedia University, 63100 Cyberjaya (Malaysia); Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia); Tou, T.Y., E-mail: tytou@mmu.edu.my [Faculty of Engineering, Multimedia University, 63100 Cyberjaya (Malaysia)

    2014-11-03

    A mixed-source thermal evaporation method was used to fabricate organic light emitting diodes (OLEDs) with uniformly mixed (UM), continuously graded mixed (CGM) and step-wise graded, mixed (SGM) light-emitting layers. N,N′-Bis(3-methylphenyl)-N,N′-diphenylbenzidine and Tris-(8-hydroxyquinoline)aluminum were used, respectively, as the hole- and electron-transport materials. As compared to the conventional, heterojunction OLED, the maximum brightness of UM-, CGM- and SGM-OLEDs without charge injection layers were improved by 2.2, 3.8 and 2.1 times, respectively, while the maximum power efficiencies improved by 1.5, 3.2 and 1.9 times. These improvements were discussed in terms of more distributed recombination zone and removal of interfacial barrier. - Highlights: • Fabrication of OLEDs using a mixed-source evaporation technique • Three different types of mixed-host OLEDs with better brightness • Improved electroluminescence and power efficiencies as compared to conventional OLED.

  3. ZnO PN Junctions for Highly-Efficient, Low-Cost Light Emitting Diodes

    Energy Technology Data Exchange (ETDEWEB)

    David P. Norton; Stephen Pearton; Fan Ren

    2007-09-30

    By 2015, the US Department of Energy has set as a goal the development of advanced solid state lighting technologies that are more energy efficient, longer lasting, and more cost-effective than current technology. One approach that is most attractive is to utilize light-emitting diode technologies. Although III-V compound semiconductors have been the primary focus in pursuing this objective, ZnO-based materials present some distinct advantages that could yield success in meeting this objective. As with the nitrides, ZnO is a direct bandgap semiconductor whose gap energy (3.2 eV) can be tuned from 3.0 to 4 eV with substitution of Mg for higher bandgap, Cd for lower bandgap. ZnO has an exciton binding energy of 60 meV, which is larger than that for the nitrides, indicating that it should be a superior light emitting semiconductor. Furthermore, ZnO thin films can be deposited at temperatures on the order of 400-600 C, which is significantly lower than that for the nitrides and should lead to lower manufacturing costs. It has also been demonstrated that functional ZnO electronic devices can be fabricated on inexpensive substrates, such as glass. Therefore, for the large-area photonic application of solid state lighting, ZnO holds unique potential. A significant impediment to exploiting ZnO in light-emitting applications has been the absence of effective p-type carrier doping. However, the recent realization of acceptor-doped ZnO material overcomes this impediment, opening the door to ZnO light emitting diode development In this project, the synthesis and properties of ZnO-based pn junctions for light emitting diodes was investigated. The focus was on three issues most pertinent to realizing a ZnO-based solid state lighting technology, namely (1) achieving high p-type carrier concentrations in epitaxial and polycrystalline films, (2) realizing band edge emission from pn homojunctions, and (3) investigating pn heterojunction constructs that should yield efficient light

  4. Optical-Fiber-Matrix Exposure Using Light-Emitting-Diode Sources

    Science.gov (United States)

    Horiuchi, Toshiyuki; Mirumachi, Naofumi; Ooshima, Yuki

    2007-09-01

    A new projection exposure method without using reticles was proposed, and the feasibility of printing arbitrary patterns was investigated. The preparation of expensive reticles is not favorable for the small-volume production of micro-electro-mechanical systems (MEMS), optomechanical systems, and their components. On the other hand, long turnaround time (TAT) becomes a fatal bottleneck preventing the rapid follow-up of various design changes. As a countermeasure, we previously proposed a new exposure method named optical-fiber-matrix exposure. In this method, patterns are delineated by superimposing light spots from an optical-fiber matrix, and expensive reticles are not necessary. Therefore, patterns are easily changeable by controlling the pattern delineation program. However, in the previous method, light rays from one intensive lamp were divided and switched using small mechanical shutters placed at each fiber entrance, and the shutters were not sufficiently reliable. For this reason, violet light-emitting diodes (LEDs) were used in this research in place of the lamp source and mechanical shutters, and the light or dark state at each optical fiber end was controlled using a microcomputer that switched each LED attached to each fiber entrance one by one. Since the illuminance of each LED was different, LEDs with approximately the same illuminance were selectively used, and each illuminance was adjusted to be uniform by inserting an individual color filter. Thus, the widths of patterns printed by scanning different fiber elements were homogenized. Since line-and-space patterns and various alphabet patterns were successfully printed, the feasibility of fabricating a large-scale optical-fiber matrix was also investigated. An optical-fiber line matrix composed of more than 330 fibers was fabricated without including any gaps between neighbor fibers. There will probably be no fatal problems to enlarge the matrix scale. Although the exposure speed should be improved

  5. Effect of polarized light emitting diode irradiation on wound healing.

    Science.gov (United States)

    Tada, Kaoru; Ikeda, Kazuo; Tomita, Katsuro

    2009-11-01

    We propose a new phototherapy using polarized light from light emitting diode (LED). The purpose of this study is to clarify the effect of polarized LED irradiation on wound healing. Five groups were classified: control (C), unpolarized (U), linearly polarized (L), right circularly polarized (RC), and left circularly polarized (LC) LED irradiation. In vitro study, fibroblast cell cultures were irradiated, and cellular proliferation was evaluated with a WST-8 assay. In vivo study, full-thickness skin defect of 20 mm diameter was created on the dorsal side of rats. The ratio of the residual wound area was measured, and expression of type 1 and type 3 procollagen mRNA in granulation tissue was determined by real-time reverse transcription polymerase chain reaction method. The cellular proliferation rates of group RC and L were significantly higher than other groups. The ratio of the residual wound area of group RC and L was significantly reduced than group C and U. Expression of type 1 procollagen mRNA in group RC was found to be significantly increased about 1.5-fold in comparison with the group C. There were no significant differences for type 3 procollagen. The right circularly polarized light and linearly polarized light promoted the process of wound healing by increasing the proliferation of fibroblasts, and the right circularly polarized light increased the expression of type 1 procollagen mRNA. The effectiveness of right circularly polarized light suggests that some optical active material, which has a circular dichroic spectrum, takes part in a biochemical reaction.

  6. Focus Issue: Organic light-emitting diodes-status quo and current developments.

    Science.gov (United States)

    List, Emil J W; Koch, Norbert

    2011-11-01

    The guest editors introduce the Optics Express Energy Express supplement Focus Issue, "Organic Light-Emitting Diodes," which includes six invited articles addressing the challenges of light outcoupling and light management in OLEDs.

  7. White Organic Light-Emitting Devices Based on 2-(2-Hydroxyphenyl) Benzothiazole and Its Chelate Metal Complex

    Institute of Scientific and Technical Information of China (English)

    WU Xiao-Ming; HUA Yu-Lin; WANG Zhao-Qi; ZHENG Jia-Jin; FENG Xiu-Lan; SUN Yuan-Yuan

    2005-01-01

    @@ We present three kinds of organic light-emitting devices (OLED) fabricated to achieve the emission of bright and pure white light. Device A, with a double-layered structure using 2-(2-hydroxyphenyl) benzothiazole (HBT) and poly (N-vinylcarbazole) (PVK) as the emitting layer (EML) and the hole transport layer (HTL) respectively,could realize the blue-green light emission. Bis-(2-(2-hydroxyphenyl) benzothiazole)zinc (Zn(BTZ)2), synthesized with zinc acetate dihydrate and HBT to form a complex, is used as main EMLs in a similar structure to fabricate devices B and C. Bright and pure white light emissions can be obtained from device C which was fabricated with a green-white emitting host Zn(BTZ)2 and red dopant 5,6,11,12-tetraphenylnaphthacene (rubrene). The maximum quantum efficiency of device C could reach 0.63%, and the corresponding brightness and CIE coordinates were 4000cd/m2 and (x = 0.341, y = 0.334) at the driving voltage of 20 V.

  8. Multi-solution processes of small molecule for flexible white organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, Yu-Sheng, E-mail: ystsai@nfu.edu.tw [Institute of Electro-optical and Materials Science, National Formosa University, Yunlin 63201, Taiwan, ROC (China); Chittawanij, Apisit; Hong, Lin-Ann; Guo, Siou-Wei [Institute of Electro-optical and Materials Science, National Formosa University, Yunlin 63201, Taiwan, ROC (China); Wang, Ching-Chiun [Department of Solid State Lighting Technology, Mechanical and Systems Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan, ROC (China); Juang, Fuh-Shyang [Institute of Electro-optical and Materials Science, National Formosa University, Yunlin 63201, Taiwan, ROC (China); Lai, Shih-Hsiang [Department of Solid State Lighting Technology, Mechanical and Systems Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan, ROC (China); Lin, Yang-Ching [Institute of Electro-optical and Materials Science, National Formosa University, Yunlin 63201, Taiwan, ROC (China)

    2016-04-01

    Most small molecule organic light emitting diode (SM-OLED) device structures are made in one layer using solution-based processing because the solution is usually a high dissolvent material that easily attacks the layer below it. We demonstrate a simple and reliable stamping technique for fabricating multi-solution process flexible white SM-OLEDs. The structure is anode/spin-hole injection layer/spin-emitting layer/stamping-electron transport layer/cathode. Poly(di-methyl silane) (PDMS) stamp is used for transferring electron transport layer. An intermediate ultraviolet-ozone surface treatment is introduced to temporarily modify the PDMS stamp surface. Then, the solution-based electron transport layer film can therefore be uniformly formed on top of the PDMS surface. After that the electron transport layer film on the PDMS stamp is transfer-printed onto the emitting layer with suitable heating and pressing. A solution-based processing is successfully established to efficiently fabricate flexible white SM-OLEDs. The SM-OLEDs were obtained at the current density of 20 mA/cm{sup 2}, luminance of 1062 cd/m{sup 2}, current efficiency of 5.57 cd/A, and Commission internationale de l'éclairage coordinate of (0.32, 0.35). - Highlights: • All solution-processed small molecule materials (emitting layer, electron transport layer). • Poly(di-methylsilane) (PDMS) stamp is subsequently used for stamping transfer. • The flexible white SM-OLEDs are based on solution-processes with a low-cost method.

  9. Light extraction enhancement of organic light-emitting diodes using aluminum zinc oxide embedded anodes.

    Science.gov (United States)

    Hsu, Ching-Ming; Lin, Bo-Ting; Zeng, Yin-Xing; Lin, Wei-Ming; Wu, Wen-Tuan

    2014-12-15

    Aluminum zinc oxide (AZO) has been embedded onto indium tin oxide (ITO) anode to enhance the light extraction from an organic light-emitting diode (OLED). The embedded AZO provides deflection and scattering interfaces on the newly generated AZO/organics and AZO/ITO interfaces rather than the conventional ITO/organic interface. The current efficiency of AZO embedded OLEDs was enhanced by up to 64%, attributed to the improved light extraction by additionally created reflection and scattering of emitted light on the AZO/ITO interfaces which was roughed in AZO embedding process. The current efficiency was found to increase with the increasing AZO embedded area ratio, but limited by the accompanying increases in haze and electrical resistance of the AZO embedded ITO film.

  10. 基于石墨烯的柔性黄光有机发光二极管制备与性能%Fabrication and properties of flexible yellow organic light-emitting diodes

    Institute of Scientific and Technical Information of China (English)

    孙秀英; 吴晓晓; 李福山

    2016-01-01

    采用喷涂技术制备了石墨烯/PEDOT:PSS复合透明导电薄膜,并在此基础上制备了柔性黄光OLED器件。通过设计DPVBi/Rubrene/DPVBi势阱结构,可以实现电荷的有效陷获,获得稳定明亮的黄光发射。实验结果表明,适当增加发光区的厚度,可以提升器件的发光效率和稳定性,在12 V时器件的效率为0.9 cd/A。该柔性黄光OLED器件在反复弯曲测试中表现出了良好的发光稳定性,发光效率没有产生明显变化。%Graphene/PEDOT:PSS hybrid transparent conductive thin films were fabricated by using spray coating technique. Flexible yellow OLEDs were also fabricated based on the grapphene/PEDOT:PSS hybrid thin films. Charge carriers can be effectively trapped in the DPVBi/Rubrene/DPVBi structure and as a result, stable bright yellow emission can be obtained. The experimental results indicate that the efficiency and stability of the devices can be improved by enhancing the thickness of the emission region. The current efficiency of the device at 12 V is 0.9 cd/A. The flexible yellow OLEDs exhibit excellent emission stability upon repeating bending test, and the luminescent efficiency does not show obvious variation.

  11. Response time of light emitting diode-logarithmic electrometer

    Science.gov (United States)

    Acharya, Y. B.; Vyavahare, P. D.

    1998-02-01

    In a logarithmic electrometer which uses a transistor as a nonlinear element, a capacitance is generally connected across the feedback element of the operational amplifier. This stabilizes the loop but degrades the response at low current levels. However the stability problem is not so serious when a junction diode is used. In the present work an attempt was made to study the response time of a logarithmic electrometer which uses a light emitting diode (LED) as a nonlinear element and without external capacitance. The calculated values of rise time are based on an equivalent circuit with a depletion layer capacitance and voltage dependent conductance. These values are found to be in reasonable agreement with the experimentally measured values. This study will be useful in the estimation of dynamical errors in logarithmic electrometers using junction diode/LED, LED photometers and will be helpful in the techniques for improvements of the response time of logarithmic electrometers using a junction diode, particularly at low currents.

  12. Acceptor impurity activation in III-nitride light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Römer, Friedhard, E-mail: froemer@uni-kassel.de; Witzigmann, Bernd, E-mail: bernd.witzigmann@uni-kassel.de [Department of Electrical Engineering, University of Kassel, 34121 Kassel (Germany)

    2015-01-12

    In this work, the role of the acceptor doping and the acceptor activation and its impact on the internal quantum efficiency (IQE) of a Gallium Nitride (GaN) based multi-quantum well light emitting diode is studied by microscopic simulation. Acceptor impurities in GaN are subject to a high activation energy which depends on the presence of proximate dopant atoms and the electric field. A combined model for the dopant ionization and activation barrier reduction has been developed and implemented in a semiconductor carrier transport simulator. By model calculations, we demonstrate the impact of the acceptor activation mechanisms on the decay of the IQE at high current densities, which is known as the efficiency droop. A major contributor to the droop is the electron leakage which is largely affected by the acceptor doping.

  13. TCNQ Interlayers for Colloidal Quantum Dot Light-Emitting Diodes.

    Science.gov (United States)

    Koh, Weon-kyu; Shin, Taeho; Jung, Changhoon; Cho, Dr-Kyung-Sang

    2016-04-18

    CdSe/CdS/ZnS quantum dot light-emitting diodes (QD-LEDs) show increased brightness (from ca. 18 000 to 27 000 cd m(-2) ) with 7,7,8,8-tetracyanoquinodimethane (TCNQ) between the QD and electron-transfer layers of ZnO nanoparticles. As QD/ZnO layers are known to have interface defects, our finding leads to the importance of interface engineering for QD-LEDs. Although the photoluminescent intensity and decay lifetime of ZnO/TCNQ/QD layers are similar to those of ZnO/QD layers, cyclic voltammetry suggests improved charge transfer of TCNQ/ZnO layers compared to that of pure ZnO layers. This helps us to understand the mechanism of electrically driven QD-LED behavior, which differs from that of conventional solid-state LEDs, and enables the rational design of QD-based optoelectronic devices.

  14. Resonance Raman measurements of carotenoids using light emitting diodes

    CERN Document Server

    Bergeson, S D; Eyring, N J; Fralick, J F; Stevenson, D N; Ferguson, S B

    2008-01-01

    We report on the development of a compact commercial instrument for measuring carotenoids in skin tissue. The instrument uses two light emitting diodes (LEDs) for dual-wavelength excitation and four photomultiplier tubes for multichannel detection. Bandpass filters are used to select the excitation and detection wavelengths. The f/1.3 optical system has high optical throughput and single photon sensitivity, both of which are crucial in LED-based Raman measurements. We employ a signal processing technique that compensates for detector drift and error. The sensitivity and reproducibility of the LED Raman instrument compares favorably to laser-based Raman spectrometers. This compact, portable instrument is used for non-invasive measurement of carotenoid molecules in human skin with a repeatability better than 10%.

  15. Simulations of charge transport in organic light emitting diodes

    CERN Document Server

    Martin, S J

    2002-01-01

    In this thesis, two approaches to the modelling of charge transport in organic light emitting diodes (OLEDs) are presented. The first is a drift-diffusion model, normally used when considering conventional crystalline inorganic semiconductors (e.g. Si or lll-V's) which have well defined energy bands. In this model, electron and hole transport is described using the current continuity equations and the drift-diffusion current equations, and coupled to Poisson's equation. These equations are solved with the appropriate boundary conditions, which for OLEDs are Schottky contacts; carriers are injected by thermionic emission and tunnelling. The disordered nature of the organic semiconductors is accounted for by the inclusion of field-dependent carrier mobilities and Langevin optical recombination. The second approach treats the transport of carriers in disordered organic semi-conductors as a hopping process between spatially and energetically disordered sites. This method has been used previously to account for th...

  16. Model for Triplet State Engineering in Organic Light Emitting Diodes

    CERN Document Server

    Prodhan, Suryoday; Ramasesha, S

    2014-01-01

    Engineering the position of the lowest triplet state (T1) relative to the first excited singlet state (S1) is of great importance in improving the efficiencies of organic light emitting diodes and organic photovoltaic cells. We have carried out model exact calculations of substituted polyene chains to understand the factors that affect the energy gap between S1 and T1. The factors studied are backbone dimerisation, different donor-acceptor substitutions and twisted geometry. The largest system studied is an eighteen carbon polyene which spans a Hilbert space of about 991 million. We show that for reverse intersystem crossing (RISC) process, the best system involves substituting all carbon sites on one half of the polyene with donors and the other half with acceptors.

  17. Kinetics of transient electroluminescence in organic light emitting diodes

    Science.gov (United States)

    Shukla, Manju; Kumar, Pankaj; Chand, Suresh; Brahme, Nameeta; Kher, R. S.; Khokhar, M. S. K.

    2008-08-01

    Mathematical simulation on the rise and decay kinetics of transient electroluminescence (EL) in organic light emitting diodes (OLEDs) is presented. The transient EL is studied with respect to a step voltage pulse. While rising, for lower values of time, the EL intensity shows a quadratic dependence on (t - tdel), where tdel is the time delay observed in the onset of EL, and finally attains saturation at a sufficiently large time. When the applied voltage is switched off, the initial EL decay shows an exponential dependence on (t - tdec), where tdec is the time when the voltage is switched off. The simulated results are compared with the transient EL performance of a bilayer OLED based on small molecular bis(2-methyl 8-hydroxyquinoline)(triphenyl siloxy) aluminium (SAlq). Transient EL studies have been carried out at different voltage pulse amplitudes. The simulated results show good agreement with experimental data. Using these simulated results the lifetime of the excitons in SAlq has also been calculated.

  18. Specifics and Challenges to Flexible Organic Light-Emitting Devices

    Directory of Open Access Journals (Sweden)

    Mariya Aleksandrova

    2016-01-01

    Full Text Available Several recent developments in material science and deposition methods for flexible organic light-emitting devices (OLEDs are surveyed. The commonly used plastic substrates are compared, according to their mechanical, optical, thermal, and chemical properties. Multilayer electrode structures, used as transparent electrodes, replacing conventional indium tin oxide (ITO are presented and data about their conductivity, transparency, and bending ability are provided. Attention is paid to some of the most popular industrial processes for flexible OLEDs manufacturing, such as roll-to-roll printing, inkjet printing, and screen printing. Main specifics and challenges, related to the foils reliability, mechanical stability of the transparent electrodes, and deposition and patterning of organic emissive films, are discussed.

  19. Cooling analysis of a light emitting diode automotive fog lamp

    Directory of Open Access Journals (Sweden)

    Zadravec Matej

    2017-01-01

    Full Text Available Efficiency of cooling fins inside of a light emitting diode fog lamp is studied using computational fluid dynamics. Diffusion in heat sink, natural convection and radiation are the main principles of the simulated heat transfer. The Navier-Stokes equations were solved by the computational fluid dynamics code, including Monte Carlo radiation model and no additional turbulence model was needed. The numerical simulation is tested using the existing lamp geometry and temperature measurements. The agreement is excellent inside of few degrees at all measured points. The main objective of the article is to determine the cooling effect of various heat sink parts. Based on performed simulations, some heat sink parts are found to be very ineffective. The geometry and heat sink modifications are proposed. While radiation influence is significant, compressible effects are found to be minor.

  20. Enhanced Phycocyanin Production from Spirulina platensis using Light Emitting Diode

    Science.gov (United States)

    Bachchhav, Manisha Bhanudas; Kulkarni, Mohan Vinayak; Ingale, Arun G.

    2016-12-01

    This work investigates the performance of different cultivation conditions using Light Emitting Diode (LED) as a light source for the production of phycocyanin from Spirulina platensis. With LEDs under autotrophic conditions, red LED produced maximum amount of biomass (8.95 g/l). As compared to autotrophic cultivation with fluorescent lamp (control), cultivations using LEDs under autotrophic and mixotrophic mode significantly enhanced the phycocyanin content. For autotrophic conditions (with LED) phycocyanin content was in the range of 103-242 mg/g of dry biomass, whereas for mixotrophic conditions (0.1% glucose and LED) it was in the range of 254-380 mg/g of dry biomass. Spirulina cultivated with yellow LED under mixotrophic conditions had 5.4-fold more phycocyanin (380 mg/g of dry biomass) than control (70 mg/g of dry biomass). The present study demonstrates that the LEDs under mixotrophic conditions gave sixfold (2497 mg/l) higher yields of phycocyanin as compared to autotrophic condition under white light (415 mg/l).

  1. Enhanced Phycocyanin Production from Spirulina platensis using Light Emitting Diode

    Science.gov (United States)

    Bachchhav, Manisha Bhanudas; Kulkarni, Mohan Vinayak; Ingale, Arun G.

    2017-06-01

    This work investigates the performance of different cultivation conditions using Light Emitting Diode (LED) as a light source for the production of phycocyanin from Spirulina platensis. With LEDs under autotrophic conditions, red LED produced maximum amount of biomass (8.95 g/l). As compared to autotrophic cultivation with fluorescent lamp (control), cultivations using LEDs under autotrophic and mixotrophic mode significantly enhanced the phycocyanin content. For autotrophic conditions (with LED) phycocyanin content was in the range of 103-242 mg/g of dry biomass, whereas for mixotrophic conditions (0.1% glucose and LED) it was in the range of 254-380 mg/g of dry biomass. Spirulina cultivated with yellow LED under mixotrophic conditions had 5.4-fold more phycocyanin (380 mg/g of dry biomass) than control (70 mg/g of dry biomass). The present study demonstrates that the LEDs under mixotrophic conditions gave sixfold (2497 mg/l) higher yields of phycocyanin as compared to autotrophic condition under white light (415 mg/l).

  2. Monolithic photonic integration of suspended light emitting diode, waveguide and photodetector

    CERN Document Server

    Wang, Yongjin; Gao, Xumin; Cai, Wei; Xu, Yin; Yuan, Jialei; Zhu, Guixia; Yang, Yongchao; Cao, Xun; Zhu, Hongbo; Gruenberg, Peter

    2015-01-01

    We report here a monolithic photonic integration of light emitting diode (LED) with waveguide and photodetector to build a highly-integrated photonic system to perform functionalities on the GaN-on-silicon platform. Suspended p-n junction InGaN/GaN multiple quantum wells (MQWs) are used for device fabrication. Part of the LED emission is coupled into suspended waveguide and then, the guided light laterally propagates along the waveguide and is finally sensed by the photodetector. Planar optical communication experimentally demonstrates that the proof-of-concept monolithic photonic integration system can achieve the on-chip optical interconnects. This work paves the way towards novel active electro-optical sensing system and planar optical communication in the visible range.

  3. Escaped and Trapped Emission of Organic Light-Emitting Diodes

    Institute of Scientific and Technical Information of China (English)

    LIANG Shi-Xiong; WU Zhao-Xin; ZHAO Xuan-Ke; HOU Xun

    2012-01-01

    By locating the emitters around the first and second antinode of the metal electrode, the escaped and trapped emission of small molecule based bottom emission organic light-emitting diodes is investigated by using an integrating sphere, a fiber spectrometer and a glass hemisphere. It is found that the external coupling ratio by locating the emitters at the second antinode (at a distance of 220 nm from the cathode) is 70%, which is higher than that of an emitter at the first antinode (60 nm from the cathode) in theory and experiment. Extending the "half-space" dipole model by taking the dipole radiation pattern into account, we also calculate the optical coupling efficiency for the emitter at both the first and second antinode. Our experimental and theoretical results will benefit the optimization of device structures for the higher out-coupling efficiency.%By locating the emitters around the first and second antinode of the metal electrode,the escaped and trapped emission of small molecule based bottom emission organic light-emitting diodes is investigated by using an integrating sphere,a fiber spectrometer and a glass hemisphere.It is found that the external coupling ratio by locating the emitters at the second antinode (at a distance of 220 nm from the cathode) is 70%,which is higher than that of an emitter at the first antinode (60nm from the cathode) in theory and experiment.Extending the "half-space" dipole model by taking the dipole radiation pattern into account,we also calculate the optical coupling efficiency for the emitter at both the first and second antinode.Our experimental and theoretical results will benefit the optimization of device structures for the higher out-coupling efficiency.

  4. Gallium nitride nanowire based nanogenerators and light-emitting diodes.

    Science.gov (United States)

    Chen, Chih-Yen; Zhu, Guang; Hu, Youfan; Yu, Jeng-Wei; Song, Jinghui; Cheng, Kai-Yuan; Peng, Lung-Han; Chou, Li-Jen; Wang, Zhong Lin

    2012-06-26

    Single-crystal n-type GaN nanowires have been grown epitaxially on a Mg-doped p-type GaN substrate. Piezoelectric nanognerators based on GaN nanowires are investigated by conductive AFM, and the results showed an output power density of nearly 12.5 mW/m(2). Luminous LED modules based on n-GaN nanowires/p-GaN substrate have been fabricated. CCD images of the lighted LED and the corresponding electroluminescence spectra are recorded at a forward bias. Moreover, the GaN nanowire LED can be lighted up by the power provided by a ZnO nanowire based nanogenerator, demonstrating a self-powered LED using wurtzite-structured nanomaterials.

  5. Process optimization of gravure printed light-emitting polymer layers by a neural network approach

    NARCIS (Netherlands)

    Michels, J.J.; Winter, S.H.P.M. de; Symonds, L.H.G.

    2009-01-01

    We demonstrate that artificial neural network modeling is a viable tool to predict the processing dependence of gravure printed light-emitting polymer layers for flexible OLED lighting applications. The (local) thickness of gravure printed light-emitting polymer (LEP) layers was analyzed using micro

  6. Process optimization of gravure printed light-emitting polymer layers by a neural network approach

    NARCIS (Netherlands)

    Michels, J.J.; Winter, S.H.P.M. de; Symonds, L.H.G.

    2009-01-01

    We demonstrate that artificial neural network modeling is a viable tool to predict the processing dependence of gravure printed light-emitting polymer layers for flexible OLED lighting applications. The (local) thickness of gravure printed light-emitting polymer (LEP) layers was analyzed using

  7. Monolithic white light emitting diodes using a (Ga,In)N-based light converter

    Science.gov (United States)

    Damilano, Benjamin; Lekhal, Kaddour; Kim-Chauveau, Hyonju; Hussain, Sakhawat; Frayssinet, Eric; Brault, Julien; Chenot, Sébastien; Vennéguès, Philippe; De Mierry, Philippe; Massies, Jean

    2014-03-01

    Commercially available inorganic white light emitting diodes (LEDs) are essentially based on the combination of a blue InGaN based LED chip covered by a long wavelength emitting (yellow, red) phosphor. We propose to avoid this step of phosphor deposition by taking advantage of the fact that yellow to red emission can be achieved using InGaN alloys. By stacking an InGaN/GaN multiple quantum well (QW) emitting in the yellow, acting as a light converter, and a short wavelength blue-violet pump LED grown on top, white light emission can be obtained. Furthermore, if we extend the emission spectrum of the light converter into the red, a warm white light color is demonstrated when a pump LED is grown on top. However, the high In content InGaN QWs of the light converter have a low thermal stability and the QW efficiency tends to degrade during the growth of the pump LED. Three different solutions are explored to avoid the thermal degradation of the light converter. The monolithic LED structures were grown by molecular beam epitaxy (MBE), by a combination of both MBE and metal-organic chemical vapor phase epitaxy (MOCVD), or by a low temperature full-MOCVD process. The best results are obtained using a complete MOCVD growth process. The structure and the MOCVD growth conditions are specifically adapted in order to avoid the thermal degradation of the large In composition InGaN QWs emitting at long wavelength during the growth of the subsequent layers.

  8. DNA Bases Thymine and Adenine in Bio-Organic Light Emitting Diodes

    Science.gov (United States)

    2014-11-24

    DNA Bases Thymine and Adenine in Bio-Organic Light Emitting Diodes Eliot F. Gomez1, Vishak Venkatraman1, James G. Grote2 & Andrew J. Steckl1...45433-7707 USA. We report on the use of nucleic acid bases (NBs) in organic light emitting diodes (OLEDs). NBs are small molecules that are the basic...polymer has been a frequent natural material integrated in electronic devices. DNA has been used in organic light - emitting diodes (OLEDs)4,5,7–14

  9. Wide-Area Thermal Processing of Light-Emitting Materials

    Energy Technology Data Exchange (ETDEWEB)

    Duty, C.; Quick, N. (AppliCote Associates, LLC)

    2011-09-30

    Silicon carbide based materials and devices have been successfully exploited for diverse electronic applications. However, they have not achieved the same success as Si technologies due to higher material cost and higher processing temperatures required for device development. Traditionally, SiC is not considered for optoelectronic applications because it has an indirect bandgap. However, AppliCote Associates, LLC has developed a laser-based doping process which enables light emission in SiC through the creation of embedded p-n junctions. AppliCote laser irradiation of silicon carbide allows two different interaction mechanisms: (1) Laser conversion or induced phase transformation which creates carbon rich regions that have conductive properties. These conductive regions are required for interconnection to the light emitting semiconducting region. (2) Laser doping which injects external dopant atoms into the substrate that introduces deep level transition states that emit light when electrically excited. The current collaboration with AppliCote has focused on the evaluation of ORNL's unique Pulse Thermal Processing (PTP) technique as a replacement for laser processing. Compared to laser processing, Pulse Thermal Processing can deliver similar energy intensities (20-50 kW/cm2) over a much larger area (up to 1,000 cm2) at a lower cost and much higher throughput. The main findings of our investigation; which are significant for the realization of SiC based optoelectronic devices, are as follows: (1) The PTP technique is effective in low thermal budget activation of dopants in SiC similar to the laser technique. The surface electrical conductivity of the SiC samples improved by about three orders of magnitude as a result of PTP processing which is significant for charge injection in the devices; (2) The surface composition of the SiC film can be modified by the PTP technique to create a carbon-rich surface (increased local C:Si ratio from 1:1 to 2.9:1). This is

  10. Efficient separation of conjugated polymers using a water soluble glycoprotein matrix: from fluorescence materials to light emitting devices.

    Science.gov (United States)

    Hendler, Netta; Wildeman, Jurjen; Mentovich, Elad D; Schnitzler, Tobias; Belgorodsky, Bogdan; Prusty, Deepak K; Rimmerman, Dolev; Herrmann, Andreas; Richter, Shachar

    2014-03-01

    Optically active bio-composite blends of conjugated polymers or oligomers are fabricated by complexing them with bovine submaxilliary mucin (BSM) protein. The BSM matrix is exploited to host hydrophobic extended conjugated π-systems and to prevent undesirable aggregation and render such materials water soluble. This method allows tuning the emission color of solutions and films from the basic colors to the technologically challenging white emission. Furthermore, electrically driven light emitting biological devices are prepared and operated.

  11. The compromises of printing organic electronics: a case study of gravure-printed light-emitting electrochemical cells.

    Science.gov (United States)

    Hernandez-Sosa, Gerardo; Tekoglu, Serpil; Stolz, Sebastian; Eckstein, Ralph; Teusch, Claudia; Trapp, Jannik; Lemmer, Uli; Hamburger, Manuel; Mechau, Norman

    2014-05-28

    Light-emitting electrochemical cells (LECs) are fabricated by gravure printing. The compromise between device performance and printing quality is correlated to the ink formulation and the printing process. It is shown that the rheological properties of the ink formulations of LECs can be tailored without changing the chemical composition of the material blend. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Perovskite nanocrystals for light-emitting and energy harvesting applications (Conference Presentation)

    Science.gov (United States)

    Urban, Alexander S.; Sichert, Jasmina A.; Tong, Yu; Hintermayr, Verena; Polavarapu, Lakshminarayana; Stolarczyk, Jacek K.; Feldmann, Jochen

    2016-09-01

    We focus on fabricating organic/inorganic halide perovskites with controlled dimensionality, size and composition and studying the optical and electrical properties of the resulting nanocrystals. By partially exchanging the most commonly used organic cation methylammonium for a cation with a larger chain we are able to fabricate two-dimensional nanoplatelets down to a single unit cell thickness.1 Through absorption and photoluminescence measurements we find that this leads to a strong-quantum size effect in the perovskites while additionally increasing the exciton bind energy to several hundreds of meV. We employ several fabrication techniques to increase the fluorescence quantum yield to be able to investigate single particles, and to study energy transport between individual nanocrystals by time-resolved spectroscopic methods. Our findings can lead to improvements in not only photovoltaic devices, but also for light-harvesting and light-emitting devices, such as LEDs and lasers. (1) Sichert, J. A.; Tong, Y.; Mutz, N.; Vollmer, M.; Fischer, S.; Milowska, K. Z.; García Cortadella, R.; Nickel, B.; Cardenas-Daw, C.; Stolarczyk, J. K.; Urban, A. S.; Feldmann, J. Nano Letters 2015, 15, 6521.

  13. A standardized light-emitting diode device for photoimmunotherapy.

    Science.gov (United States)

    de Boer, Esther; Warram, Jason M; Hartmans, Elmire; Bremer, Peter J; Bijl, Ben; Crane, Lucia M A; Nagengast, Wouter B; Rosenthal, Eben L; van Dam, Gooitzen M

    2014-11-01

    Antibody-based photodynamic therapy-photoimmunotherapy (PIT)-is an ideal modality to improve cancer treatment because of its selective and tumor-specific mode of therapy. Because the use of PIT for cancer treatment is continuing to be described, there is great need to characterize a standardized light source for PIT application. In this work, we designed and manufactured a light-emitting diode (LED)/PIT device and validated the technical feasibility, applicability, safety, and consistency of the system for cancer treatment. To outline the characteristics and photobiologic safety of the LED device, multiple optical measurements were performed in accordance with a photobiologic safety standard. A luciferase-transfected breast cancer cell line (2LMP-Luc) in combination with panitumumab-IRDye 700DX (pan-IR700) was used to validate the in vitro and in vivo performance of our LED device. Testing revealed the light source to be safe, easy to use, and independent of illumination and power output (mW cm(-2)) variations over time. For in vitro studies, an LED dose (2, 4, 6 J cm(-2))-dependent cytotoxicity was observed using propidium iodide exclusion and annexin V staining. Dose-dependent blebbing was also observed during microscopic analysis. Bioluminescence signals of tumors treated with 0.3 mg of pan-IR700 and 50 J cm(-2) decreased significantly (>80%) compared with signals of contralateral nontreated sites at 4 h and at 1 d after PIT. To our knowledge, a normalized and standardized LED device has not been explicitly described or developed. In this article, we introduce a standardized light source and validate its usability for PIT applications. © 2014 by the Society of Nuclear Medicine and Molecular Imaging, Inc.

  14. Light Emitting, Photovoltaic or Other Electronic Apparatus and System

    Science.gov (United States)

    Ray, William Johnstone (Inventor); Lowenthal, Mark D. (Inventor); Shotton, Neil O. (Inventor); Blanchard, Richard A. (Inventor); Lewandowski, Mark Allan (Inventor); Fuller, Kirk A. (Inventor); Frazier, Donald Odell (Inventor)

    2016-01-01

    The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of lenses suspended in a polymer deposited or attached over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes are substantially spherical, and have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap.

  15. Light-emitting diodes for solid-state lighting: searching room for improvements

    Science.gov (United States)

    Karpov, Sergey Y.

    2016-03-01

    State-of-the art light-emitting diodes (LEDs) for solid-state lighting (SSL) are reviewed with the focus on their efficiency and ways for its improvement. Mechanisms of the LED efficiency losses are considered on the heterostructure, chip, and device levels, including high-current efficiency droop, recombination losses, "green gap", current crowding, Stokes losses, etc. Materials factors capable of lowering the LED efficiency, like composition fluctuations in InGaN alloys and plastic stress relaxation in device heterostructures, are also considered. Possible room for the efficiency improvement is discussed along with advanced schemes of color mixing and LED parameters optimal for generation of high-quality white light.

  16. Geometrical design and measurement of light-emitting diode for lighting

    OpenAIRE

    Cheung, Wing-shing; 章永聖

    2015-01-01

    Year 2014 is a milestone in the history of LEDs industry. Isamu Akasaki, Hiroshi Amano and Shuji Nakamura were awarded the Nobel Prize in Physics 2014 for their contribution in the application of “bright and energy-saving white light sources” with invention of efficient blue indium gallium nitrate (InGaN) light-emitting diodes (LED) [1]. This can be treated as an admission of the impotence of LED lighting in the modern human civilization. Although the LED- related technologies had been we...

  17. Light extraction efficiency enhancement for fluorescent SiC based white light-emitting diodes

    DEFF Research Database (Denmark)

    Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini

    fluorescent Boron-Nitrogen co-doped 6H SiC is optimized in terms of source material, growth condition, dopant concentration, and carrier lifetime by using photoluminescence, pump-probe spectroscopy etc. The internal quantum efficiency is measured and the methods to increase the efficiency have been explored......Fluorescent SiC based white light-emitting diodes(LEDs) light source, as an innovative energy-efficient light source, would even have longer lifetime, better light quality and eliminated blue-tone effect, compared to the current phosphor based white LED light source. In this paper, the yellow....... At a device level, the focus is on improving the light extraction efficiency due to the rather high refractive index of SiC by nanostructuring the surface of SiC. Both periodic nanostructures made by e-beam lithography and nanosphere lithography and random nanostructures made by self-assembled Au nanosphere...

  18. Evaluation of light-emitting diodes for signage applications

    Science.gov (United States)

    Freyssinier, Jean Paul; Zhou, Yutao; Ramamurthy, Vasudha; Bierman, Andrew; Bullough, John D.; Narendran, Nadarajah

    2004-01-01

    This paper outlines two parts of a study designed to evaluate the use of light-emitting diodes (LEDs) in channel-letter signs. The first part of the study evaluated the system performance of red LED signs and white LED signs against reference neon and cold-cathode signs. The results show a large difference between the actual performance and potential savings from red and white LEDs. Depending on the configuration, a red LED sign could use 20% to 60% less power than a neon sign at the same light output. The light output of the brightest white LED sign tested was 15% lower than the cold-cathode reference, but its power was 53% higher. It appears from this study that the most efficient white LED system is still 40% less efficient than the cold-cathode system tested. One area that offers a great potential for further energy savings is the acrylic diffuser of the signs. The acrylic diffusers measured absorb between 60% and 66% of the light output produced by the sign. Qualitative factors are also known to play an important role in signage systems. One of the largest issues with any new lighting technology is its acceptance by the end user. Consistency of light output and color among LEDs, even from the same manufacturing batch, and over time, are two of the major issues that also could affect the advantages of LEDs for signage applications. To evaluate different signage products and to identify the suitability of LEDs for this application, it is important to establish a criterion for brightness uniformity. Building upon this information, the second part of the study used human factors evaluations to determine a brightness-uniformity criterion for channel-letter signs. The results show that the contrast modulation between bright and dark areas within a sign seems to elicit the strongest effect on how people perceive uniformity. A strong monotonic relationship between modulation and acceptability was found in this evaluation. The effect of contrast seems to be stronger

  19. Edge-emitting ultraviolet n-ZnO:Al/i-ZnO/p-GaN heterojunction light-emitting diode with a rib waveguide.

    Science.gov (United States)

    Liang, H K; Yu, S F; Yang, H Y

    2010-02-15

    An edge-emitting ultraviolet n-ZnO:Al/i-ZnO/p-GaN heterojunction light-emitting diode with a rib waveguide is fabricated by filtered cathodic vacuum arc technique at low deposition temperature (approximately 150 degrees C). Electroluminescence with emission peak at 387 nm is observed. Good correlation between electro- and photo- luminescence spectra suggests that the i-ZnO layer of the heterojunction supports radiative excitonic recombination. Furthermore, it is found that the emission intensity can be enhanced by approximately 5 times due to the presence of the rib waveguide. Only fundamental TE and TM polarizations are supported inside the rib waveguide and the intensity of TE polarization is approximately 2.2 time larger than that of TM polarization.

  20. Simulation of mixed-host emitting layer based organic light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Riku, C.; Kee, Y. Y.; Ong, T. S.; Tou, T. Y. [Faculty of Engineering, Multimedia University, 631000 Cyberjaya (Malaysia); Yap, S. S. [Faculty of Engineering, University of Malaya, 50603 Kuala Lampur (Malaysia)

    2015-04-24

    ‘SimOLED’ simulator is used in this work to investigate the efficiency of the mixed-host organic light emitting devices (MH-OLEDs). Tris-(8-hydroxyquinoline) aluminum(3) (Alq{sub 3}) and N,N-diphenyl-N,N-Bis(3-methylphenyl)-1,1-diphenyl-4,4-diamine (TPD) are used as the electron transport layer (ETL) material and hole transport layer (HTL) material respectively, and the indium-doped tin oxide (ITO) and aluminum (Al) as anode and cathode. Three MH-OLEDs, A, B and C with the same structure of ITO / HTM (15 nm) / Mixed host (70 nm) / ETM (10 nm) /Al, are stimulated with ratios TPD:Alq{sub 3} of 3:5, 5:5, and 5:3 respectively. The Poole-Frenkel model for electron and hole mobilities is employed to compute the current density-applied voltage-luminance characteristics, distribution of the electric field, carrier concentrations and recombination rate.

  1. Blue emitting 1,8-naphthalimides with electron transport properties for organic light emitting diode applications

    Science.gov (United States)

    Ulla, Hidayath; Kiran, M. Raveendra; Garudachari, B.; Ahipa, T. N.; Tarafder, Kartick; Adhikari, Airody Vasudeva; Umesh, G.; Satyanarayan, M. N.

    2017-09-01

    In this article, the synthesis, characterization and use of two novel naphthalimides as electron-transporting emitter materials for organic light emitting diode (OLED) applications are reported. The molecules were obtained by substituting electron donating chloro-phenoxy group at the C-4 position. A detailed optical, thermal, electrochemical and related properties were systematically studied. Furthermore, theoretical calculations (DFT) were performed to get a better understanding of the electronic structures. The synthesized molecules were used as electron transporters and emitters in OLEDs with three different device configurations. The devices with the molecules showed blue emission with efficiencies of 1.89 cdA-1, 0.98 lmW-1, 0.71% at 100 cdm-2. The phosphorescent devices with naphthalimides as electron transport materials displayed better performance in comparison to the device without any electron transporting material and were analogous with the device using standard electron transporting material, Alq3. The results demonstrate that the naphthalimides could play a significant part in the progress of OLEDs.

  2. Luminescent ion pairs with tunable emission colors for light-emitting devices and electrochromic switches.

    Science.gov (United States)

    Guo, Song; Huang, Tianci; Liu, Shujuan; Zhang, Kenneth Yin; Yang, Huiran; Han, Jianmei; Zhao, Qiang; Huang, Wei

    2017-01-01

    Most recently, stimuli-responsive luminescent materials have attracted increasing interest because they can exhibit tunable emissive properties which are sensitive to external physical stimuli, such as light, temperature, force, and electric field. Among these stimuli, electric field is an important external stimulus. However, examples of electrochromic luminescent materials that exhibit emission color change induced by an electric field are limited. Herein, we have proposed a new strategy to develop electrochromic luminescent materials based on luminescent ion pairs. Six tunable emissive ion pairs (IP1-IP6) based on iridium(iii) complexes have been designed and synthesized. The emission spectra of ion pairs (IPs) show concentration dependence and the energy transfer process is very efficient between positive and negative ions. Interestingly, IP6 displayed white emission at a certain concentration in solution or solid state. Thus, in this contribution, UV-chip (365 nm) excited light-emitting diodes showing orange, light yellow and white emission colors were successfully fabricated. Furthermore, IPs displayed tunable and reversible electrochromic luminescence. For example, upon applying a voltage of 3 V onto the electrodes, the emission color of the solution of IP1 near the anode or cathode changed from yellow to red or green, respectively. Color tunable electrochromic luminescence has also been realized by using other IPs. Finally, a solid-film electrochromic switch device with a sandwiched structure using IP1 has been fabricated successfully, which exhibited fast and reversible emission color change.

  3. Green-light supplementation for enhanced lettuce growth under red- and blue-light-emitting diodes

    Science.gov (United States)

    Kim, Hyeon-Hye; Goins, Gregory D.; Wheeler, Raymond M.; Sager, John C.

    2004-01-01

    Plants will be an important component of future long-term space missions. Lighting systems for growing plants will need to be lightweight, reliable, and durable, and light-emitting diodes (LEDs) have these characteristics. Previous studies demonstrated that the combination of red and blue light was an effective light source for several crops. Yet the appearance of plants under red and blue lighting is purplish gray making visual assessment of any problems difficult. The addition of green light would make the plant leave appear green and normal similar to a natural setting under white light and may also offer a psychological benefit to the crew. Green supplemental lighting could also offer benefits, since green light can better penetrate the plant canopy and potentially increase plant growth by increasing photosynthesis from the leaves in the lower canopy. In this study, four light sources were tested: 1) red and blue LEDs (RB), 2) red and blue LEDs with green fluorescent lamps (RGB), 3) green fluorescent lamps (GF), and 4) cool-white fluorescent lamps (CWF), that provided 0%, 24%, 86%, and 51% of the total PPF in the green region of the spectrum, respectively. The addition of 24% green light (500 to 600 nm) to red and blue LEDs (RGB treatment) enhanced plant growth. The RGB treatment plants produced more biomass than the plants grown under the cool-white fluorescent lamps (CWF treatment), a commonly tested light source used as a broad-spectrum control.

  4. Full-Color Emissive Poly(Ethylene Oxide) Electrospun Nanofibers Containing a Single Hyperbranched Conjugated Polymer for Large-Scale, Flexible Light-Emitting Sheets.

    Science.gov (United States)

    Kim, Jongho; Lee, Taek Seung

    2016-02-01

    White-light-emitting protocols based on organic materials have received much attention in the academic and industrial fields because of their potential applications in full-color displays and back-lighting units for liquid crystal displays. Here, the attempt is made to fabricate white-light-emitting, electrospun poly(ethylene oxide) (PEO) sheets containing controlled concentrations of a single light-emitting material composed of a type of hyperbranched conjugated polymer (HCP). The HCPs used here have the unique property of exhibiting a variety of fluorescence colors in the electrospun matrix that is caused by the different distances between HCP chains depending on their concentrations, leading to different degrees of intermolecular energy transfer. Therefore, the emission colors of the PEO sheets can be easily manipulated by simply varying the HCP concentrations in the PEO matrix. The resulting method for fabricating nanofibers comprising light-emitting materials in the polymer matrix has great potential for easy fabrication of cost-effective, flexible light-emitting system.

  5. Improved Light Output Power of Chemically Transferred InGaN/GaN Light-Emitting Diodes for Flexible Optoelectronic Applications

    Directory of Open Access Journals (Sweden)

    Ho-Jun Lee

    2015-01-01

    Full Text Available Recent needs of semiconductor lighting sources have pursued diverse functionalities such as flexibility and transparency under high quantum efficiency. Inorganic/organic hybrid light-emitting diodes (LEDs are one way to meet these requirements. Here, we report on flexible III-nitride-based LEDs and the improvement of their electrical and optical properties. To realize high light emission power and stable current operation, high-quality epitaxy and elaborate chip processing were performed. The fabricated flexible LEDs showed over threefold optical output power compared to normal LEDs on Si and had comparable forward voltage and series resistances.

  6. Light-emitting nanocomposites and novel amorphous polymers for optical applications

    Science.gov (United States)

    Gipson, Kyle Garrod

    Polymeric optical materials generally are comprised of amorphous polymers that are transparent in at visible wavelengths but exhibit strong absorption bands in the near-infrared making them less useful for many optical applications. Attenuation, which is the absorption per unit length, largely results from the high vibrational energy associated with carbon-hydrogen bonds contained in the polymer backbone. Attenuation can be mitigated by optical amplification utilizing light emitting additives. Investigated in this dissertation are synthesis techniques for the fabrication of light-emitting polymer nanocomposites and their resultant thermal and rheological characteristics for potential use as polymer optical fibers or films. Inorganic nanocrystals doped with optically active rare-earth ions (Tb 3+:LaF3) treated with organic ligands were synthesized in water and methanol in order to produce polymethyl methacrylate (PMMA) light-emitting nanocomposites. Two different aromatic ligands (acetylsalicylic acid, ASA and 2-picolinic acid, PA) were employed to functionalize the surface of Tb 3+:LaF3 nanocrystals. We have used infrared spectroscopy, thermal analysis, elemental analysis, dynamic light scattering, rheological measurements and optical spectroscopy to investigate the nanoparticle structure and composition response of ligand-capped nanocrystals under various synthesis parameters. A theoretical interpretation of particle-to-particle interactions also was conducted which supported our study of the potential of agglomeration within the nanoparticle suspensions. Novel amorphous polymers (e.g. perfluorocyclobutyl aryl ethers, PFCB), which do not exhibit strong C-H vibrations, have been reported to possess excellent optical properties. Little is known of the intrinsic properties of PFCBs (e.g. biphenylvinyl ether, BPVE and hexafluoroisopropylidene vinyl ether, 6F) as well as the behavior of the polymer melt during extrusion. We preformed empirical and experimental thermal

  7. Active Matrix Organic Light Emitting Diode (AMOLED) Environmental Test Report

    Science.gov (United States)

    Salazar, George A.

    2013-01-01

    This report focuses on the limited environmental testing of the AMOLED display performed as an engineering evaluation by The NASA Johnson Space Center (JSC)-specifically. EMI. Thermal Vac, and radiation tests. The AMOLED display is an active-matrix Organic Light Emitting Diode (OLED) technology. The testing provided an initial understanding of the technology and its suitability for space applications. Relative to light emitting diode (LED) displays or liquid crystal displays (LCDs), AMOLED displays provide a superior viewing experience even though they are much lighter and smaller, produce higher contrast ratio and richer colors, and require less power to operate than LCDs. However, AMOLED technology has not been demonstrated in a space environment. Therefore, some risks with the technology must be addressed before they can be seriously considered for human spaceflight. The environmental tests provided preliminary performance data on the ability of the display technology to handle some of the simulated induced space/spacecraft environments that an AMOLED display will see during a spacecraft certification test program. This engineering evaluation is part of a Space Act Agreement (SM) between The NASA/JSC and Honeywell International (HI) as a collaborative effort to evaluate the potential use of AMOLED technology for future human spaceflight missions- both government-led and commercial. Under this SM, HI is responsible for doing optical performance evaluation, as well as temperature and touch screen studies. The NASA/JSC is responsible for performing environmental testing comprised of EMI, Thermal Vac, and radiation tests. Additionally, as part of the testing, limited optical data was acquired to assess performance as the display was subjected to the induced environments. The NASA will benefit from this engineering evaluation by understanding AMOLED suitability for future use in space as well as becoming a smarter buyer (or developer) of the technology. HI benefits

  8. Time Effectiveness of Ultraviolet C Light (UVC Emitted by Light Emitting Diodes (LEDs in Reducing Stethoscope Contamination

    Directory of Open Access Journals (Sweden)

    Gabriele Messina

    2016-09-01

    Full Text Available Today it is well demonstrated that stethoscopes can be as contaminated as hands, which are a recognized source of Health-Care Associated Infections (HCAIs. Ultraviolet C (UVC light has proven disinfection capacity and the innovative UVC technology of Light Emitting Diode (LED shows several potential benefits. To verify whether the use of UVC LEDs is effective and reliable in stethoscope membrane disinfection after prolonged use, a pre-post intervention study was conducted. A total of 1668 five-minute cycles were performed on two UVC LEDs to simulate their use; thereafter, their disinfection capacity was tested on stethoscope membranes used on a previously auscultated volunteer. Then, a further 1249 cycles were run and finally the LEDs were tested to assess performance in reducing experimental contamination by Staphylococcus aureus, Pseudomonas aeruginosa and Escherichia coli on the stethoscope membrane. Baseline volunteer contamination identified 104 Colony Forming Units (CFUs while treated Petri dishes had 12 and 15 CFUs (p < 0.001. Statistically significant differences (p < 0.001 were also found relating to the reduction of specific bacteria: in particular, after treatment no CFU were observed for S. aureus and E. coli. UVC LEDs demonstrated the capacity to maintain high levels of disinfection after more than 240 h of use and they were effective against common microorganisms that are causative agents of HCAIs.

  9. Time Effectiveness of Ultraviolet C Light (UVC) Emitted by Light Emitting Diodes (LEDs) in Reducing Stethoscope Contamination.

    Science.gov (United States)

    Messina, Gabriele; Fattorini, Mattia; Nante, Nicola; Rosadini, Daniele; Serafini, Andrea; Tani, Marco; Cevenini, Gabriele

    2016-09-23

    Today it is well demonstrated that stethoscopes can be as contaminated as hands, which are a recognized source of Health-Care Associated Infections (HCAIs). Ultraviolet C (UVC) light has proven disinfection capacity and the innovative UVC technology of Light Emitting Diode (LED) shows several potential benefits. To verify whether the use of UVC LEDs is effective and reliable in stethoscope membrane disinfection after prolonged use, a pre-post intervention study was conducted. A total of 1668 five-minute cycles were performed on two UVC LEDs to simulate their use; thereafter, their disinfection capacity was tested on stethoscope membranes used on a previously auscultated volunteer. Then, a further 1249 cycles were run and finally the LEDs were tested to assess performance in reducing experimental contamination by Staphylococcus aureus, Pseudomonas aeruginosa and Escherichia coli on the stethoscope membrane. Baseline volunteer contamination identified 104 Colony Forming Units (CFUs) while treated Petri dishes had 12 and 15 CFUs (p LEDs demonstrated the capacity to maintain high levels of disinfection after more than 240 h of use and they were effective against common microorganisms that are causative agents of HCAIs.

  10. Time Effectiveness of Ultraviolet C Light (UVC) Emitted by Light Emitting Diodes (LEDs) in Reducing Stethoscope Contamination

    Science.gov (United States)

    Messina, Gabriele; Fattorini, Mattia; Nante, Nicola; Rosadini, Daniele; Serafini, Andrea; Tani, Marco; Cevenini, Gabriele

    2016-01-01

    Today it is well demonstrated that stethoscopes can be as contaminated as hands, which are a recognized source of Health-Care Associated Infections (HCAIs). Ultraviolet C (UVC) light has proven disinfection capacity and the innovative UVC technology of Light Emitting Diode (LED) shows several potential benefits. To verify whether the use of UVC LEDs is effective and reliable in stethoscope membrane disinfection after prolonged use, a pre-post intervention study was conducted. A total of 1668 five-minute cycles were performed on two UVC LEDs to simulate their use; thereafter, their disinfection capacity was tested on stethoscope membranes used on a previously auscultated volunteer. Then, a further 1249 cycles were run and finally the LEDs were tested to assess performance in reducing experimental contamination by Staphylococcus aureus, Pseudomonas aeruginosa and Escherichia coli on the stethoscope membrane. Baseline volunteer contamination identified 104 Colony Forming Units (CFUs) while treated Petri dishes had 12 and 15 CFUs (p < 0.001). Statistically significant differences (p < 0.001) were also found relating to the reduction of specific bacteria: in particular, after treatment no CFU were observed for S. aureus and E. coli. UVC LEDs demonstrated the capacity to maintain high levels of disinfection after more than 240 h of use and they were effective against common microorganisms that are causative agents of HCAIs. PMID:27669273

  11. Efficient inverted organic light-emitting devices by amine-based solvent treatment (Presentation Recording)

    Science.gov (United States)

    Song, Myoung Hoon; Choi, Kyoung-Jin; Jung, Eui Dae

    2015-10-01

    The efficiency of inverted polymer light-emitting diodes (iPLEDs) were remarkably enhanced by introducing spontaneously formed ripple-shaped nanostructure of ZnO (ZnO-R) and amine-based polar solvent treatment using 2-methoxyethanol and ethanolamine (2-ME+EA) co-solvents on ZnO-R. The ripple-shape nanostructure of ZnO layer fabricated by solution process with optimal rate of annealing temperature improves the extraction of wave guide modes inside the device structure, and 2-ME+EA interlayer enhances the electron injection and hole blocking and reduces exciton quenching between polar solvent treated ZnO-R and emissive layer. As a result, our optimized iPLEDs show the luminous efficiency (LE) of 61.6 cd A-1, power efficiency (PE) of 19.4 lm W-1 and external quantum efficiency (EQE) of 17.8 %. This method provides a promising method, and opens new possibilities for not only organic light-emitting diodes (OLEDs) but also other organic optoelectronic devices such as organic photovoltaics, organic thin film transistors, and electrically driven organic diode laser.

  12. P-doping-free III-nitride high electron mobility light-emitting diodes and transistors

    Energy Technology Data Exchange (ETDEWEB)

    Li, Baikui; Tang, Xi; Chen, Kevin J., E-mail: eekjchen@ust.hk [Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong); Wang, Jiannong [Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2014-07-21

    We report that a simple metal-AlGaN/GaN Schottky diode is capable of producing GaN band-edge ultraviolet emission at 3.4 eV at a small forward bias larger than ∼2 V at room temperature. Based on the surface states distribution of AlGaN, a mature impact-ionization-induced Fermi-level de-pinning model is proposed to explain the underlying mechanism of the electroluminescence (EL) process. By experimenting with different Schottky metals, Ni/Au and Pt/Au, we demonstrated that this EL phenomenon is a “universal” property of metal-AlGaN/GaN Schottky diodes. Since this light-emitting Schottky diode shares the same active structure and fabrication processes as the AlGaN/GaN high electron mobility transistors, straight-forward and seamless integration of photonic and electronic functional devices has been demonstrated on doping-free III-nitride heterostructures. Using a semitransparent Schottky drain electrode, an AlGaN/GaN high electron mobility light-emitting transistor is demonstrated.

  13. Novel Efficient Light-Emitting Polyfluorene Derivatives Modified by Electron-Deficient Moieties with Nonlinear Structure

    Institute of Scientific and Technical Information of China (English)

    PENG,Qiang(彭强); HUANG,Yan(黄艳); LU,Zhi-Yun(卢志云); QIN,Sheng-Ying(秦圣英); XIE,Ming-Gui(谢明贵); GAO,Wei-Xianb(高维先); PENG,Jun-Biao(彭俊彪); CAO,Yong(曹镛)

    2004-01-01

    Two novel fluorene-based copolymers (PFSD and PFMD) containing squaric acid or maleimide unit in the main chain were synthesized in good yields by Suzuki coupling reaction. The resulting polymers possess excellent thermal stability, high electron affinity and high photoluminescence (PL) quantum yields. They can fluoresce in yellow-light range due to either the charge transfer between a fluorene segment and an electron-deficient containing squaric acid/maleimide segment of the polymers or the Forster energy transfer between different polymer chains.The results from PL measurements of the isothermally heated polymer thin films show that the commonly observed aggregate excimer formation in polyfluorenes is very effectively suppressed in these two polymers due to the nonlinear structures of maleimide and squaric acid moieties. Double-layer polymer light-emitting diodes (PLED)were fabricated using the resulting polymers as the emitting layers and Ba or Mg :Ag (V :V= 10 :1) as cathodes.All the devices show bright yellow emission (562-579 nm) with different maximum external quantum efficiencies (0.006%-1.13%). Compared with the other devices, indium-tin oxide (ITO)/polyethylenedioxythiophene (PEDOT):polystyrene sulfonic acid (PSS)/PFMD/Mg:Ag has the higher maximum external quantum efficiency of 1.13% at 564 cd/m2 with a bias of 8.4 V.

  14. An Alkane-Soluble Dendrimer as Electron-Transport Layer in Polymer Light-Emitting Diodes.

    Science.gov (United States)

    Zhong, Zhiming; Zhao, Sen; Pei, Jian; Wang, Jian; Ying, Lei; Peng, Junbiao; Cao, Yong

    2016-08-10

    Polymer light-emitting diodes (PLEDs) have attracted broad interest due to their solution-processable properties. It is well-known that to achieve better performance, organic light-emitting diodes require multilayer device structures. However, it is difficult to realize multilayer device structures by solution processing for PLEDs. Because most semiconducting polymers have similar solubility in common organic solvents, such as toluene, xylene, chloroform, and chlorobenzene, the deposition of multilayers can cause layers to mix together and damage each layer. Herein, a novel semiorthogonal solubility relationship was developed and demonstrated. For the first time, an alkane-soluble dendrimer is utilized as the electron-transport layer (ETL) in PLEDs via a solution-based process. With the dendrimer ETL, the external quantum efficiency increases more than threefold. This improvement in the device performance is attributed to better exciton confinement, improved exciton energy transfer, and better charge carrier balance. The semiorthogonal solubility provided by alkane offers another process dimension in PLEDs. By combining them with water/alcohol-soluble polyelectrolytes, more exquisite multilayer devices can be fabricated to achieve high device performance, and new device structures can be designed and realized.

  15. PEDOT:PSS/Graphene Nanocomposite Hole-Injection Layer in Polymer Light-Emitting Diodes

    Directory of Open Access Journals (Sweden)

    Chun-Hsuan Lin

    2012-01-01

    Full Text Available We report on effects of doping graphene in poly(3,4-ethylenedioxythiophene: poly(styrene sulfonate, PEDOT:PSS, as a PEDOT:PSS/graphene nanocomposite hole injection layer on the performance enhancement of polymer light-emitting diodes (PLEDs. Graphene oxides were first synthesized and then mixed in the PEDOT:PSS solution with specifically various amounts. Graphenes were reduced in the PEDOT:PSS matrix through thermal reduction. PLED devices with hole-injection nanocomposite layer containing particular doping concentration were fabricated, and the influence of doping concentration on device performance was examined by systematically characterizations of various device properties. Through the graphene doping, the resistance in the hole-injection layer and the turn-on voltage could be effectively reduced that benefited the injection and transport of holes and resulted in a higher overall efficiency. The conductivity of the hole-injection layer was monotonically increased with the increase of doping concentration, performance indices from various aspects, however, did not show the same dependence because faster injected holes might alter not only the balance of holes and electrons but also their combination locations in the light-emitting layer. Results show that optimal doping concentration was the case with 0.03 wt% of graphene oxide.

  16. Optimal nitrogen and phosphorus codoping carbon dots towards white light-emitting device

    Science.gov (United States)

    Zhang, Feng; Wang, Yaling; Miao, Yanqin; He, Yuheng; Yang, Yongzhen; Liu, Xuguang

    2016-08-01

    Through a one-step fast microwave-assisted approach, nitrogen and phosphorus co-doped carbon dots (N,P-CDs) were synthesized using ammonium citrate (AC) as a carbon source and phosphates as additive reagent. Under the condition of an optimal reaction time of 140 s, the influence of additive with different N and P content on fluorescent performance of N,P-CDs was further explored. It was concluded that high nitrogen content and moderate phosphorus content are necessary for obtaining high quantum yield (QY) N,P-CDs, among which the TAP-CDs (CDs synthesized using ammonium phosphate as additive reagent) show high quantum yield (QY) of 62% and red-green-blue (RGB) spectral composition of 51.67%. Besides, the TAP-CDs exhibit satisfying thermal stability within 180 °C. By virtue of good optical and thermal properties of TAP-CDs, a white light-emitting device (LED) was fabricated by combining ultraviolet chip with TAP-CDs as phosphor. The white LED emits bright warm-white light with the CIE chromaticity coordinate of (0.38, 0.35) and the corresponding color temperature (CCT) of 4450 K, indicating the potential of TAP-CDs phosphor in white LED.

  17. Improvement in Device Performance and Reliability of Organic Light-Emitting Diodes through Deposition Rate Control

    Directory of Open Access Journals (Sweden)

    Shun-Wei Liu

    2014-01-01

    Full Text Available We demonstrated a fabrication technique to reduce the driving voltage, increase the current efficiency, and extend the operating lifetime of an organic light-emitting diode (OLED by simply controlling the deposition rate of bis(10-hydroxybenzo[h]qinolinato beryllium (Bebq2 used as the emitting layer and the electron-transport layer. In our optimized device, 55 nm of Bebq2 was first deposited at a faster deposition rate of 1.3 nm/s, followed by the deposition of a thin Bebq2 (5 nm layer at a slower rate of 0.03 nm/s. The Bebq2 layer with the faster deposition rate exhibited higher photoluminescence efficiency and was suitable for use in light emission. The thin Bebq2 layer with the slower deposition rate was used to modify the interface between the Bebq2 and cathode and hence improve the injection efficiency and lower the driving voltage. The operating lifetime of such a two-step deposition OLED was 1.92 and 4.6 times longer than that of devices with a single deposition rate, that is, 1.3 and 0.03 nm/s cases, respectively.

  18. The efficiency challenge of nitride light-emitting diodes for lighting

    KAUST Repository

    Weisbuch, Claude

    2015-03-13

    © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. We discuss the challenges of light-emitting diodes in view of their application to solid-state lighting. The requirement is to at least displace the quite efficient fluorescent, sodium, and high intensity discharge lamps used today in the main energy consuming lighting sectors, industrial, commercial and outdoors, with more efficient and better light quality lamps. We show that both from the point of view of cost of ownership and carbon emissions reduction, the relevant metric is efficiency, more than the cost of lumens. Then, progress from present performance requires identification of the loss mechanisms in light emission from LEDs, and solutions competing with mainstream c-plane LEDS grown on sapphire need to be on par with these. Special attention is devoted to a discussion of the efficiency droop mechanisms, and of a recent direct measurement of Auger generated electrons which appear to be responsible for droop.

  19. Correlated Color Temperature Tunable Multi-chip Light Emitting Diodes Light Source Design

    Institute of Scientific and Technical Information of China (English)

    SHEN Hai-ping; PAN Jian-gen; FENG Hua-jun

    2008-01-01

    One of the methods to derive white light from light emitting diodes(LEDs) is the multi-chip white LED technology, which mixes the light from red, green and blue LEDs. Introduced is an optimal algorithm for the spectrum design of the multi-chip white LEDs in this paper. It optimizes the selection of single color LEDs and drive current controlling, so that the multi-chip white LED achieves the target correlated color temperature(CCT), as well as high luminous efficacy and good color rendering. A CCT tunable LED light source with four high-power LEDs is realized based on the above optimal design. Test results show that it maintains satisfactory color rendering and stable luminous efficacy across the whole CCT tuning range. Finally, discussed are the design improvement and the prospect of the future applications of the CCT tunable LED light source.

  20. Thin film Encapsulations of Flexible Organic Light Emitting Diodes

    Directory of Open Access Journals (Sweden)

    Tsai Fa-Ta

    2016-01-01

    Full Text Available Various encapsulated films for flexible organic light emitting diodes (OLEDs were studied in this work, where gas barrier layers including inorganic Al2O3 thin films prepared by atomic layer deposition, organic Parylene C thin films prepared by chemical vapor deposition, and their combination were considered. The transmittance and water vapor transmission rate of the various organic and inorgabic encapsulated films were tested. The effects of the encapsulated films on the luminance and current density of the OLEDs were discussed, and the life time experiments of the OLEDs with these encapsulated films were also conducted. The results showed that the transmittance are acceptable even the PET substrate were coated two Al2O3 and Parylene C layers. The results also indicated the WVTR of the PET substrate improved by coating the barrier layers. In the encapsulation performance, it indicates the OLED with Al2O3 /PET, 1 pair/PET, and 2 pairs/PET presents similarly higher luminance than the other two cases. Although the 1 pair/PET encapsulation behaves a litter better luminance than the 2 pairs/PET encapsulation, the 2 pairs/PET encapsulation has much better life time. The OLED with 2 pairs/PET encapsulation behaves near double life time to the 1 pair encapsulation, and four times to none encapsulation.

  1. Temperature-dependent photoluminescence in light-emitting diodes

    Science.gov (United States)

    Lu, Taiping; Ma, Ziguang; Du, Chunhua; Fang, Yutao; Wu, Haiyan; Jiang, Yang; Wang, Lu; Dai, Longgui; Jia, Haiqiang; Liu, Wuming; Chen, Hong

    2014-01-01

    Temperature-dependent photoluminescence (TDPL), one of the most effective and powerful optical characterisation methods, is widely used to investigate carrier transport and localized states in semiconductor materials. Resonant excitation and non-resonant excitation are the two primary methods of researching this issue. In this study, the application ranges of the different excitation modes are confirmed by analysing the TDPL characteristics of GaN-based light-emitting diodes. For resonant excitation, the carriers are generated only in the quantum wells, and the TDPL features effectively reflect the intrinsic photoluminescence characteristics within the wells and offer certain advantages in characterising localized states and the quality of the wells. For non-resonant excitation, both the wells and barriers are excited, and the carriers that drift from the barriers can contribute to the luminescence under the driving force of the built-in field, which causes the existing equations to become inapplicable. Thus, non-resonant excitation is more suitable than resonant excitation for studying carrier transport dynamics and evaluating the internal quantum efficiency. The experimental technique described herein provides fundamental new insights into the selection of the most appropriate excitation mode for the experimental analysis of carrier transport and localized states in p-n junction devices. PMID:25139682

  2. Dye concentration study in PVK based light emitting diodes

    Science.gov (United States)

    Gautier-Thianche, E.; Sentein, C.; Nunzi, J.-M.; Lorin, A.; Denis, C.; Raimond, P.

    1998-06-01

    Light emitting diodes made of a single spin-coated layer of poly(9-vinylcarbazole) doped with coumarin-515 dye have been prepared. The influence of dye concentration on emission and electrical characteristics is evidenced. Two different regimes are identified. At low concentrations, hole injection barrier raises, holes are trapped and mobility decreases. External quantum efficiency increases with concentration. At concentrations larger than 10 per electron. Coumarin in a single-layer diode improves electron-hole injection and recombination balance more than an additional hole-blocking layer. Nous avons étudié des DEL constituées d'une monocouche de poly(9-vinylcarbazole) (PVK) dopée avec un colorant laser : la coumarine 515. Le taux de dopage en colorant influe sur les caractéristiques courant - tension et sur le rendement quantique d'électroluminescence. Aux faibles taux de dopage, la hauteur de la barrière d'injection des trous augmente, les trous sont piégés dans la matrice et leur mobilité décroît. Le rendement quantique externe augmente avec la concentration de dopant. Aux concentrations supérieures à 10 photoluminescence chute mais le rendement quantique externe augmente jusqu'à 0.1 recombinaison électron-trou bien mieux qu'une couche supplémentaire bloquant l'injection des trous.

  3. Carbazole-containing light- emitting polymers: Properties of excited states

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    A series of light-emitting conjugated polymers alternatively involving carbazole and bivinylene arylene moieties in the main chain were synthesized via Wittig-Horner type copolymerization. The photoinduced charge transfer process relating to these polymers was investigated by using the technique of fluorescence spectroscopy. The interaction between excited copolymers and C60 in benzene solution was studied. The fluorescence quenching can be well described by the "sphere-of-action" mechanism. It is believed that two basic steps are involved in the quenching process, i.e. the diffusion of excitation within the conjugated polymers and the dissociation of the exctions trapped by fullerene. The radius of the sphere-of-action can be related to the excitation diffusion length, which depends on the lifetime of the exciton. The dynamic fluorescence quenching of the copolymers by another quencher, 1,4-dicyanobenzene (DCB) was also surveyed. Copolymers with different chain conformations show different temperature effects in the dynamic quenching. A planar conformation is beneficial for the quenching via bimolecular collision.

  4. Kinetics of transient electroluminescence in organic light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Shukla, Manju; Brahme, Nameeta [School of Studies in Physics, Pt. Ravishanker Shukla University, Raipur (Congo, The Democratic Republic of the) 492010 (India); Kumar, Pankaj; Chand, Suresh [Center for Organic Electronics, National Physical Laboratory, Dr K S Krishnan Road, New Delhi-110012 (India); Kher, R S [Department of Physics, Government Science PG College, Bilaspur (Congo, The Democratic Republic of the) 495006 (India); Khokhar, M S K [Department of Rural Technology, GuruGhasidas University Bilaspur (Congo, The Democratic Republic of the) 495009 (India)], E-mail: manjushukla2003@gmail.com

    2008-08-21

    Mathematical simulation on the rise and decay kinetics of transient electroluminescence (EL) in organic light emitting diodes (OLEDs) is presented. The transient EL is studied with respect to a step voltage pulse. While rising, for lower values of time, the EL intensity shows a quadratic dependence on (t - t{sub del}), where t{sub del} is the time delay observed in the onset of EL, and finally attains saturation at a sufficiently large time. When the applied voltage is switched off, the initial EL decay shows an exponential dependence on (t - t{sub dec}), where t{sub dec} is the time when the voltage is switched off. The simulated results are compared with the transient EL performance of a bilayer OLED based on small molecular bis(2-methyl 8-hydroxyquinoline)(triphenyl siloxy) aluminium (SAlq). Transient EL studies have been carried out at different voltage pulse amplitudes. The simulated results show good agreement with experimental data. Using these simulated results the lifetime of the excitons in SAlq has also been calculated.

  5. Emission characteristics of light-emitting diodes by confocal microscopy

    Science.gov (United States)

    Cheung, W. S.; Choi, H. W.

    2016-03-01

    The emission profiles of light-emitting diodes have typically be measured by goniophotometry. However this technique suffers from several drawbacks, including the inability to generate three-dimensional intensity profiles as well as poor spatial resolution. These limitations are particularly pronounced when the technique is used to compared devices whose emission patterns have been modified through surface texturing at the micrometer and nanometer scales,. In view of such limitations, confocal microscopy has been adopted for the study of emission characteristics of LEDs. This enables three-dimensional emission maps to be collected, from which two-dimensional cross-sectional emission profiles can be generated. Of course, there are limitations associated with confocal microscopy, including the range of emission angles that can be measured due to the limited acceptance angle of the objective. As an illustration, the technique has been adopted to compare the emission profiles of LEDs with different divergence angles using an objective with a numerical aperture of 0.8. It is found that the results are consistent with those obtained by goniophotometry when the divergence angle is less that the acceptance angle of the objective.

  6. Using Organic Light-Emitting Electrochemical Thin-Film Devices to Teach Materials Science

    Science.gov (United States)

    Sevian, Hannah; Muller, Sean; Rudmann, Hartmut; Rubner, Michael F.

    2004-01-01

    Materials science can be taught by applying organic light-emitting electrochemical thin-film devices and in this method students were allowed to make a light-emitting device by spin coating a thin film containing ruthenium (II) complex ions onto a glass slide. Through this laboratory method students are provided with the opportunity to learn about…

  7. Characterization of Polyaniline Based Polymer Light-Emitting Devices During Operation by Electrical Impedance Spectroscopy

    Science.gov (United States)

    2004-07-01

    regions. 2. Experimental The light-emitting devices were prepared by Covion by spin coating and curing a 80 nm layer of Pani/PSS as HIL onto indium...tin oxide (ITO) patterned glass substrates followed by spin coating of the 80 nm light-emitting polymer layer. A water based Pani/PSS dispersion

  8. Organic Single-Crystal Light-Emitting Transistor Coupling with Optical Feedback Resonators

    NARCIS (Netherlands)

    Bisri, Satria Zulkarnaen; Sawabe, Kosuke; Imakawa, Masaki; Maruyama, Kenichi; Yamao, Takeshi; Hotta, Shu; Iwasa, Yoshihiro; Takenobu, Taishi

    2012-01-01

    Organic light-emitting transistors (OLETs) are of great research interest because they combine the advantage of the active channel of a transistor that can control the luminescence of an in-situ light-emitting diode in the same device. Here we report a novel single-crystal OLET (SCLET) that is coupl

  9. Plasmonic Perovskite Light-Emitting Diodes Based on the Ag-CsPbBr3 System.

    Science.gov (United States)

    Zhang, Xiaoli; Xu, Bing; Wang, Weigao; Liu, Sheng; Zheng, Yuanjin; Chen, Shuming; Wang, Kai; Sun, Xiao Wei

    2017-02-08

    The enhanced luminescence through semiconductor-metal interactions suggests the great potential of device performance improvement via properly tailored plasmonic nanostructures. Surface plasmon enhanced electroluminescence in an all-inorganic CsPbBr3 perovskite light-emitting diode (LED) is fabricated by decorating the hole transport layer with the synthesized Ag nanorods. An increase of 42% and 43.3% in the luminance and efficiency is demonstrated for devices incorporated with Ag nanorods. The device with Ag introduction indicates identical optoelectronic properties to the controlled device without Ag nanostructures. The increased spontaneous emission rate caused by the Ag-induced plasmonic near-field effect is responsible for the performance enhancement. Therefore, the plasmonic Ag-CsPbBr3 nanostructure studied here provides a novel strategy on the road to the future development of perovskite LEDs.

  10. Charge generation layers for solution processed tandem organic light emitting diodes with regular device architecture.

    Science.gov (United States)

    Höfle, Stefan; Bernhard, Christoph; Bruns, Michael; Kübel, Christian; Scherer, Torsten; Lemmer, Uli; Colsmann, Alexander

    2015-04-22

    Tandem organic light emitting diodes (OLEDs) utilizing fluorescent polymers in both sub-OLEDs and a regular device architecture were fabricated from solution, and their structure and performance characterized. The charge carrier generation layer comprised a zinc oxide layer, modified by a polyethylenimine interface dipole, for electron injection and either MoO3, WO3, or VOx for hole injection into the adjacent sub-OLEDs. ToF-SIMS investigations and STEM-EDX mapping verified the distinct functional layers throughout the layer stack. At a given device current density, the current efficiencies of both sub-OLEDs add up to a maximum of 25 cd/A, indicating a properly working tandem OLED.

  11. Diffusion voltage in polymer light emitting diodes measured with electric field induced second harmonic generation

    Science.gov (United States)

    Kristensen, P. K.; Rafaelsen, J.; Pedersen, T. G.; Pedersen, K.

    2005-12-01

    We apply electric field induced second harmonic (EFISH) to polymer light emitting diodes (PLEDs) and demonstrate the ability to determine the diffusion voltage in PLED devices. The EFISH signal is proportional to the square of the effective field, which is the sum of the diffusion voltage and the applied voltage. By minimizing the EFISH-signal as a function of the applied voltage, the diffusion voltage is determined by measuring the applied voltage that cancels out the diffusion voltage. The PLEDs are fabricated with indium tin oxide (ITO) as the hole injecting contact and two different electron injecting contacts, namely aluminum and calcium. The diffusion voltage originates from the rearranged charges caused by the difference in Fermi levels in the materials in the PLEDs. Different contacts will thus cause different diffusion voltages. We demonstrate here that the EFISH signal is proportional to the square of the effective field in both reverse and forward bias, and discuss the dependence on contact materials.

  12. Modification of Conductive Polymer for Polymeric Anodes of Flexible Organic Light-Emitting Diodes

    Directory of Open Access Journals (Sweden)

    Wang Guang-Feng

    2009-01-01

    Full Text Available Abstract A conductive polymer, poly(3,4-ethylenedioxythiophene:poly(styrene sulfonate (PEDOT:PSS, was modified with dimethyl sulfoxide (DMSO in solution state, together with sub-sequential thermal treatment of its spin-coated film. The electrical conductivity increased by more than three orders of magnitude improvement was achieved. The mechanism for the conductivity improvement was studied at nanoscale by particle size analysis, field emission scanning electron microscopy (FESEM, and X-ray photoelectron spectroscopy (XPS. Smaller particle size was observed, resulting in larger contact area and better electrical conductive connections. Connection of conductive PEDOT increased on the surface of the PEDOT:PSS particles, which promoted high conductivity. Flexible anodes based on the modified PEDOT:PSS were fabricated. Flexible organic light-emitting diodes (FOLED based the polymeric anodes have a comparable performance to those on indium–tin–oxide (ITO anodes.

  13. Vertical nonpolar growth templates for light emitting diodes formed with GaN nanosheets

    Science.gov (United States)

    Yeh, Ting-Wei; Lin, Yen-Ting; Ahn, Byungmin; Stewart, Lawrence S.; Daniel Dapkus, P.; Nutt, Steven R.

    2012-01-01

    We demonstrate that nonpolar m-plane surfaces can be generated on uniform GaN nanosheet arrays grown vertically from the (0001)-GaN bulk material. InGaN/GaN multiple quantum wells (MQWs) grown on the facets of these nanosheets are demonstrated by cross-sectional transmission electron microscopy. Owing to the high aspect ratio of the GaN nanosheet structure, the MQWs predominantly grow on nonpolar GaN planes. The results suggest that GaN nanosheets provide a conduction path for device fabrication and also a growth template to reduce the piezoelectric field inside the active region of InGaN-based light emitting diodes.

  14. Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy

    Science.gov (United States)

    Pynn, C. D.; Kowsz, S. J.; Oh, S. H.; Gardner, H.; Farrell, R. M.; Nakamura, S.; Speck, J. S.; DenBaars, S. P.

    2016-07-01

    The performance of multiple quantum well green and yellow semipolar light-emitting diodes (LEDs) is limited by relaxation of highly strained InGaN-based active regions and the subsequent formation of nonradiative defects. Limited area epitaxy was used to block glide of substrate threading dislocations and to reduce the density of misfit dislocations (MDs) directly beneath the active region of (20 2 ¯ 1 ) LEDs. Devices were grown and fabricated on a 1D array of narrow substrate mesas to limit the MD run length. Reducing the mesa width from 20 μm to 5 μm lowered the density of basal plane and non-basal plane MDs on the mesas and limited the number of defect-generating dislocation intersections. This improvement in material quality yielded a 73% enhancement in peak external quantum efficiency for the devices with the narrowest mesas compared to the devices with the widest mesas.

  15. The effects of sodium in ITO by pulsed laser deposition on organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Yong, Thian Khok [Multimedia University, Faculty of Engineering, Cyberjaya, Selangor (Malaysia); Universiti Tunku Abdul Rahman, Faculty of Engineering and Science, Kuala Lumpur (Malaysia); Kee, Yeh Yee; Tan, Sek Sean; Siew, Wee Ong; Tou, Teck Yong [Multimedia University, Faculty of Engineering, Cyberjaya, Selangor (Malaysia); Yap, Seong Shan [Multimedia University, Faculty of Engineering, Cyberjaya, Selangor (Malaysia); Norwegian University of Science and Technology, Department of Physics, Trondheim (Norway)

    2010-12-15

    The depth profile of ITO on glass was measured by the time-of-flight secondary ion mass spectroscopy (TOFSIMS) which revealed high sodium (Na) ion concentration at the ITO surface as well as at the ITO-glass interface as a result of out diffusion with substrate heating. Effects of Na ions on the performance of organic light-emitting diode (OLED) were studied by etching away a few tens of nanometers off the ITO surface with a dilute aquaregia solution of HNO{sub 3}:HCl:H{sub 2}O. A single-layer, molecularly doped ITO/(PVK+TPD+Alq{sub 3})/Al OLEDs were fabricated on bare and etched ITO samples. Although the removal of a 10-nm layer of ITO surface increased the voltage range, brightness, and lifetime, it was insufficient to correlate these improvements with solely to the Na ion reduction without considering the surface roughness. (orig.)

  16. Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes.

    Science.gov (United States)

    Neplokh, Vladimir; Messanvi, Agnes; Zhang, Hezhi; Julien, Francois H; Babichev, Andrey; Eymery, Joel; Durand, Christophe; Tchernycheva, Maria

    2015-12-01

    We report on the demonstration of substrate-free nanowire/polydimethylsiloxane (PDMS) membrane light-emitting diodes (LEDs). Metal-organic vapour-phase epitaxy (MOVPE)-grown InGaN/GaN core-shell nanowires were encapsulated into PDMS layer. After metal deposition to p-GaN, a thick PDMS cap layer was spin-coated and the membrane was manually peeled from the sapphire substrate, flipped upside down onto a steel holder, and transparent indium tin oxide (ITO) contact to n-GaN was deposited. The fabricated LEDs demonstrate rectifying diode characteristics. For the electroluminescence (EL) measurements, the samples were manually bonded using silver paint. The EL spectra measured at different applied voltages demonstrate a blue shift with the current increase. This shift is explained by the current injection into the InGaN areas of the active region with different average indium content.

  17. Fully Printed Halide Perovskite Light-Emitting Diodes with Silver Nanowire Electrodes.

    Science.gov (United States)

    Bade, Sri Ganesh R; Li, Junqiang; Shan, Xin; Ling, Yichuan; Tian, Yu; Dilbeck, Tristan; Besara, Tiglet; Geske, Thomas; Gao, Hanwei; Ma, Biwu; Hanson, Kenneth; Siegrist, Theo; Xu, Chengying; Yu, Zhibin

    2016-02-23

    Printed organometal halide perovskite light-emitting diodes (LEDs) are reported that have indium tin oxide (ITO) or carbon nanotubes (CNTs) as the transparent anode, a printed composite film consisting of methylammonium lead tribromide (Br-Pero) and poly(ethylene oxide) (PEO) as the emissive layer, and printed silver nanowires as the cathode. The fabrication can be carried out in ambient air without humidity control. The devices on ITO/glass have a low turn-on voltage of 2.6 V, a maximum luminance intensity of 21014 cd m(-2), and a maximum external quantum efficiency (EQE) of 1.1%, surpassing previous reported perovskite LEDs. The devices on CNTs/polymer were able to be strained to 5 mm radius of curvature without affecting device properties.

  18. High luminance phosphorescent organic light emitting diodes based on Re(I) complex

    Science.gov (United States)

    Su, Bin; Zhao, Jing; Wang, Fujun; Che, Guangbo; Wang, Yang; Wang, Bo; Gao, Lin; Yan, Yongsheng

    2016-10-01

    A novel Re(I) complex with the acenaphtho[1,2-b]pyrazino[2,3-f][1,10]phenanthroline (APPT) ligand Re(APPT)(CO)3Br (abbreviated as Re-APPT) was used to fabricate organic light emitting diodes (OLEDs). From the electroluminescence (EL) spectra of the device at different bias voltages, it could be found that the EL maxima shifted approximately 30 nm. For OLEDs with 5% Re-APPT doped emissive layer, turn-on voltage of 6 V, maximum luminance of 7631 cd/m2 and a current efficiency up to 2.36 cd/A were obtained. We suppose that a direct charge trapping took the dominant position in the EL process. Trapping contributed mostly to this relatively higher luminance.

  19. White organic light emitting devices with hybrid emissive layers combining phosphorescence and fluorescence

    Energy Technology Data Exchange (ETDEWEB)

    Lei Gangtie; Chen Xiaolan; Wang Lei; Zhu Meixiang; Zhu Weiguo [Key Lab of Environmental-friendly Chemistry and Application of Ministry of Education, College of Chemistry, Xiangtan University, Xiangtan 411105 (China); Wang Liduo; Qiu Yong [Key Lab of Organic-Optoelectronics and Molecular Sciences of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084 (China)], E-mail: lgt@xtu.edu.cn

    2008-05-21

    We fabricated a white organic light-emitting diode (WOLED) by hybrid emissive layers which combined phosphorescence with fluorescence. In this device, the thin layer of 4-(dicyanomethylene)-2-(t-butyl)-6-(1, 1, 7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran played the role of undoped red emissive layer which was inserted between two blue phosphorescence emissive layers. The blue phosphorescent dye was bis[(4, 6-difluorophenyl)-pyridinato-N, C{sup 2}] (picolinato) Ir(III), which was doped in the host material, N, N'-dicarbazolyl-1, 4-dimethene-benzene. The WOLED showed stable Commission Internationale de L'Eclairage coordinates and a high efficency of 9.6 cd A{sup -1} when the current density was 1.8 A m{sup -2}. The maximum luminance of the device achieved was 17 400 cd m{sup -2} when the current density was 3000 A m{sup -2}.

  20. Room-temperature direct band-gap electroluminescence from germanium (111)-fin light-emitting diodes

    Science.gov (United States)

    Tani, Kazuki; Saito, Shin-ichi; Oda, Katsuya; Miura, Makoto; Wakayama, Yuki; Okumura, Tadashi; Mine, Toshiyuki; Ido, Tatemi

    2017-03-01

    Germanium (Ge) (111) fins of 320 nm in height were successfully fabricated using a combination of flattening sidewalls of a silicon (Si) fin structure by anisotropic wet etching with tetramethylammonium hydroxide, formation of thin Ge fins by selective Si oxidation in SiGe layers, and enlargement of Ge fins by Ge homogeneous epitaxial growth. The excellent electrical characteristics of Ge(111) fin light-emitting diodes, such as an ideality factor of 1.1 and low dark current density of 7.1 × 10‑5 A cm‑2 at reverse bias of ‑2 V, indicate their good crystalline quality. A tensile strain of 0.2% in the Ge fins, which originated from the mismatch of the thermal expansion coefficients between Ge and the covering SiO2 layers, was expected from the room-temperature photoluminescence spectra, and room-temperature electroluminescence corresponding to the direct band-gap transition was observed from the Ge fins.

  1. Role of the inversion layer on the charge injection in silicon nanocrystal multilayered light emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Tondini, S. [Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38123 Trento (Italy); Dipartimento di Fisica, Informatica e Matematica, Università di Modena e Reggio Emilia, Via Campi 213/a, 41125 Modena (Italy); Pucker, G. [Advanced Photonics and Photovoltaics Group, Bruno Kessler Foundation, Via Sommarive 18, 38123 Trento (Italy); Pavesi, L. [Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38123 Trento (Italy)

    2016-09-07

    The role of the inversion layer on injection and recombination phenomena in light emitting diodes (LEDs) is here studied on a multilayer (ML) structure of silicon nanocrystals (Si-NCs) embedded in SiO{sub 2}. Two Si-NC LEDs, which are similar for the active material but different in the fabrication process, elucidate the role of the non-radiative recombination rates at the ML/substrate interface. By studying current- and capacitance-voltage characteristics as well as electroluminescence spectra and time-resolved electroluminescence under pulsed and alternating bias pumping scheme in both the devices, we are able to ascribe the different experimental results to an efficient or inefficient minority carrier (electron) supply by the p-type substrate in the metal oxide semiconductor LEDs.

  2. Single nanowire green InGaN/GaN light emitting diodes

    Science.gov (United States)

    Zhang, Guogang; Li, Ziyuan; Yuan, Xiaoming; Wang, Fan; Fu, Lan; Zhuang, Zhe; Ren, Fang-Fang; Liu, Bin; Zhang, Rong; Tan, Hark Hoe; Jagadish, Chennupati

    2016-10-01

    Single nanowire (NW) green InGaN/GaN light-emitting diodes (LEDs) were fabricated by top-down etching technology. The electroluminescence (EL) peak wavelength remains approximately constant with an increasing injection current in contrast to a standard planar LED, which suggests that the quantum-confined Stark effect is significantly reduced in the single NW device. The strain relaxation mechanism is studied in the single NW LED using Raman scattering analysis. As compared to its planar counterpart, the EL peak of the NW LED shows a redshift, due to electric field redistribution as a result of changes in the cavity mode pattern after metallization. Our method has important implication for single NW optoelectronic device applications.

  3. Long-term stability improvement of light-emitting diode using highly transparent graphene oxide paste.

    Science.gov (United States)

    Lee, Seungae; Kim, Yun Ki; Jang, Jyongsik

    2016-10-14

    A highly transparent paste adhesive is successfully fabricated by introducing graphene oxide (GO) to silicone paste adhesive by using a solvent-exchange method. The GO incorporated in the paste adhesive has a significant role in improving thermal conductivity, transparency and adhesive strength. The GO-embedded silicone paste is applied as a die-attach paste to light-emitting diodes (LEDs) in order to enhance the optical quality of the LEDs. The presence of GO in the die-attach layer of the LEDs gives rise to the enhancement of luminous intensity, effective heat dissipation, improvement of moisture barrier property as well as high adhesive strength. Consequently, the LEDs with the GO-embedded die-attach paste exhibit enhanced long-term stability. This novel approach provides a feasible and effective strategy for improving LED performance.

  4. Organic oxide/Al composite cathode in small molecular organic light-emitting diodes

    Science.gov (United States)

    Guo, Tzung-Fang; Yang, Fuh-Shun; Tsai, Zen-Jay; Wen, Ten-Chin; Wu, Ching-In; Chung, Chia-Tin

    2006-07-01

    This study addresses the feasibility of using an organic oxide/Al composite cathode to fabricate the small molecular organic light-emitting diodes (OLEDs). A supplementary organic buffer film is placed at the interface between the tris(8-hydroxyquinoline) aluminum (Alq3) and the organic oxide/Al complex layers. Incorporating the rubrene/poly(ethylene glycol) dimethyl ether (PEGDE) buffer layers into the composite cathode structure markedly improves the performance of devices. The luminous efficiencies of Alq3-based OLEDs biased at ˜100mA /cm2 are 4.8 and 5.1cd/A for rubrene (50Å)/PEGDE (15Å)/Al and rubrene (50Å)/PEGDE (15Å)/LiF (5Å)/Al cathode devices, and 1.3 and 3.8cd/A for devices with Al and LiF (5Å)/Al cathodes, respectively.

  5. Polarized light emitting diode by long-range nanorod self-assembling on a water surface.

    Science.gov (United States)

    Rizzo, Aurora; Nobile, Concetta; Mazzeo, Marco; De Giorgi, Milena; Fiore, Angela; Carbone, Luigi; Cingolani, Roberto; Manna, Liberato; Gigli, Giuseppe

    2009-06-23

    We demonstrate a straightforward strategy to fabricate a multilayer inorganic/organic polarized light-emitting diode device based on highly ordered arrays of rod-shaped nanocrystals as the active species. We have developed a simple and effective method that allows colloidal CdSe/CdS core/shell nanorods to be laterally aligned in smectic or nematic phases on the surface of water. A floating film of such ordered nanorods has been collected by a poly(dimethylsiloxane) (PDMS) stamp pad and transferred by contact printing onto previously evaporated organic layers. Thanks to the lateral nanorod alignment the as-prepared film exhibited strong polarized photoluminescence and it has been used as emissive layer in the polarized electroluminescent device.

  6. Whole device printing for full colour displays with organic light emitting diodes

    Science.gov (United States)

    Choi, Jun-ho; Kim, Kyung-Ho; Choi, Se-Jin; Lee, Hong H.

    2006-05-01

    Whole device printing is presented for realizing full colour displays with red (R), green (G) and blue (B) organic light emitting diodes (OLEDs). In this process, the whole OLED structure is transferred from a patterned mould to a glass substrate. Therefore, a simple step and repeat of the transfer of each of R, G and B OLED for RGB pixels completes the fabrication of the full colour display over a given area. A difference in the work of adhesion at two interfaces enables the transfer. A 'rigiflex' mould is used for the printing. It is rigid enough to allow sub-100 nm resolution and yet flexible enough for intimate contact with the glass substrate, which permits large area application.

  7. Voltage Drop Compensation Method for Active Matrix Organic Light Emitting Diode Displays

    Science.gov (United States)

    Choi, Sang-moo; Ryu, Do-hyung; Kim, Keum-nam; Choi, Jae-beom; Kim, Byung-hee; Berkeley, Brian

    2011-03-01

    In this paper, the conventional voltage drop compensation methods are reviewed and the novel design and driving scheme, the advanced power de-coupled (aPDC) driving method, is proposed to effectively compensate the voltage IR drop of active matrix light emitting diode (AMOLED) displays. The advanced PDC driving scheme can be applied to general AMOLED pixel circuits that have been developed with only minor modification or without requiring modification in pixel circuit. A 14-in. AMOLED panel with the aPDC driving scheme was fabricated. Long range uniformity (LRU) of the 14-in. AMOLED panel was improved from 43% without the aPDC driving scheme, to over 87% at the same brightness by using the scheme and the layout complexity of the panel with new design scheme is less than that of the panel with the conventional design scheme.

  8. Diamond based light-emitting diode for visible single-photon emission at room temperature

    Science.gov (United States)

    Lohrmann, A.; Pezzagna, S.; Dobrinets, I.; Spinicelli, P.; Jacques, V.; Roch, J.-F.; Meijer, J.; Zaitsev, A. M.

    2011-12-01

    Diamond-based p-i-n light-emitting diodes capable of single-photon emission in the visible spectral region at room temperature are discussed. The diodes were fabricated on a high quality single crystal diamond grown by chemical vapor deposition. Implantation of boron and phosphorus ions followed by annealing at a temperature of 1600 °C has been used for doping p-type and n-type areas, respectively. Electrical characterization of the devices demonstrates clear diode behavior. Spectra of electroluminescence generated in the i-area reveal sole emission from the neutral nitrogen-vacancy (NV) defects. Photon antibunching implies single-photon character of this emission when generated by individual NV defects.

  9. Organic semiconductor heterojunctions and its application in organic light-emitting diodes

    CERN Document Server

    Ma, Dongge

    2017-01-01

    This book systematically introduces the most important aspects of organic semiconductor heterojunctions, including the basic concepts and electrical properties. It comprehensively discusses the application of organic semiconductor heterojunctions as charge injectors and charge generation layers in organic light-emitting diodes (OLEDs). Semiconductor heterojunctions are the basis for constructing high-performance optoelectronic devices. In recent decades, organic semiconductors have been increasingly used to fabricate heterojunction devices, especially in OLEDs, and the subject has attracted a great deal of attention and evoked many new phenomena and interpretations in the field. This important application is based on the low dielectric constant of organic semiconductors and the weak non-covalent electronic interactions between them, which means that they easily form accumulation heterojunctions. As we know, the accumulation-type space charge region is highly conductive, which is an important property for high...

  10. Electroluminescent Characteristics of DBPPV–ZnO Nanocomposite Polymer Light Emitting Devices

    Directory of Open Access Journals (Sweden)

    Madhava Rao MV

    2009-01-01

    Full Text Available Abstract We have demonstrated that fabrication and characterization of nanocomposite polymer light emitting devices with metal Zinc Oxide (ZnO nanoparticles and 2,3-dibutoxy-1,4-poly(phenylenevinylene (DBPPV. The current and luminance characteristics of devices with ZnO nanoparticles are much better than those of device with pure DBPPV. Optimized maximum luminance efficiencies of DBPPV–ZnO (3:1 wt% before annealing (1.78 cd/A and after annealing (2.45 cd/A having a brightness 643 and 776 cd/m2at a current density of 36.16 and 31.67 mA/cm2are observed, respectively. Current density–voltage and brightness–voltage characteristics indicate that addition of ZnO nanoparticles can facilitate electrical injection and charge transport. The thermal annealing is thought to result in the formation of an interfacial layer between emissive polymer film and cathode.

  11. Substrate thermal conductivity effect on heat dissipation and lifetime improvement of organic light-emitting diodes

    Science.gov (United States)

    Chung, Seungjun; Lee, Jae-Hyun; Jeong, Jaewook; Kim, Jang-Joo; Hong, Yongtaek

    2009-06-01

    We report substrate thermal conductivity effect on heat dissipation and lifetime improvement of organic light-emitting diodes (OLEDs). Heat dissipation behavior of top-emission OLEDs fabricated on silicon, glass, and planarized stainless steel substrates was measured by using an infrared camera. Peak temperature measured from the backside of each substrate was saturated to be 21.4, 64.5, and 40.5 °C, 180 s after the OLED was operated at luminance of 10 000 cd/m2 and 80% luminance lifetime was about 198, 31, and 96 h, respectively. Efficient heat dissipation through the highly thermally conductive substrates reduced temperature increase, resulting in much improved OLED lifetime.

  12. A solvent/non-solvent system for achieving solution-processed multilayer organic light-emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Yue; Wu, Zhaoxin, E-mail: zhaoxinwu@mail.xjtu.edu.cn; He, Lin; Jiao, Bo; Hou, Xun

    2015-08-31

    We developed a solvent/non-solvent system to fabricate the multilayer organic light-emitting devices (OLEDs) based on poly(N-vinylcarbazole) (PVK) by solution-process. This solvent system consists of both the solvent and non-solvent of PVK, in which fluorescent small molecules could be fully dissolved and directly spin-coated on top of the PVK layer; it could effectively avoid the redissolution of PVK during the spin-coating process of small molecules emitting layer. In the further investigation of this system, we also demonstrated the three-component solvent system, and found out that the third component, a less volatile solvent of PVK, was crucial for preparing a smoother interface between PVK and emitting layer. Compared with OLEDs through the vacuum deposition, the devices fabricated by solution-process from the solvent/non-solvent system showed comparable efficiency, which indicate that the solvent/non-solvent system can be used as an alternative process to prepare the polymer and small molecule multilayer devices through all-solution-process. - Highlights: • We fabricate the multilayer OLEDs by solution-process using a novel system. • We develop a solvent/non-solvent system of polymer (PVK) to avoid redissolution. • Small molecules could be fully dissolved and directly spin-coated on PVK layer. • The devices fabricated by the system and vacuum deposition show comparable efficiency.

  13. Low Level Light Therapy with Light-Emitting Diodes for the Aging Face.

    Science.gov (United States)

    Calderhead, R Glen; Vasily, David B

    2016-07-01

    Low level light therapy (LLLT) with light-emitting diodes (LEDs) is emerging from the mists of black magic as a solid medico-scientific modality, with a substantial buildup of corroborative bodies of evidence for its efficacy and elucidation of the modes of action. Reports are appearing from many different specialties; however, of particular interest to plastic surgeons treating the aging face is the proven action of LED-LLLT on skin cells in both the epidermis and dermis and enhanced blood flow. Thus, LED-LLLT is a safe and effective stand-alone therapy for patients who are prepared to wait until the final effect is perceived.

  14. Novel green-emitting K2Ba5Si12O30:Eu2+ phosphors with excellent thermal quenching for white light-emitting diodes

    Science.gov (United States)

    Yeh, Kai-Yuan; Lin, Chia-Her; Maggay, Irish Valerie Buiser; Liu, Wei-Ren

    2016-09-01

    A novel green-emitting phosphor - K2Ba5Si12O30:Eu2+ (KBSO:Eu2+) was successfully synthesized via a solid state reaction. The crystal structure, luminescent properties as well as thermal quenching and LED fabrication were systematically carried out in this study. The emission and excitation spectra indicate that KBSO:Eu2+ phosphors exhibit broad excitation spectra ranging from 260 to 480 nm and an intense broad green emission at 497 nm under 370 nm excitation. The chromaticity coordinates of composition-optimized KBSO:Eu2+ phosphor is situated in the green region with coordinates (0.2404, 0.4429). The temperature-dependent photoluminescence demonstrates that KBSO:Eu2+ gives a good thermal quenching performance of ∼80% at 100 °C, which is much superior to that of commercial silicate-based phosphor of (Ba, Sr)2SiO4:Eu2+. Warm-white light-emitting diodes (LEDs) fabricated using an NUV-chip combined with the KBSO:3%Eu2+ phosphor gave color rendering indices 82.65, correlated color temperatures 4939 K, and the CIE chromaticity coordinates 0.3064, 0.3325). These results indicate that KBSO:Eu2+ is a potential green-emission phosphor for near UV and high powder white-light LEDs.

  15. Influence of Ambient Gas on the Performance of Quantum-Dot Light-Emitting Diodes.

    Science.gov (United States)

    Lin, Qingli; Chen, Fei; Wang, Hongzhe; Shen, Huaibin; Wang, Aqiang; Wang, Lei; Zhang, Fengjuan; Guo, Fang; Li, Lin Song

    2016-05-11

    Here, we report the influence of the ambient gas on the performance of quantum dot-based light-emitting diodes (QD-LEDs). The blue QD-LED devices with the maximum external quantum efficiency of 8.1% and the turn-on voltage of 2.7 V could be obtained in air. The efficiency decreases by 12% and turn-on voltage increases by 0.3 V relative to the control devices fabricated in a N2-filled glovebox. The histogram of maximum external quantum efficiency (EQE) shows average peak EQE of 8.08% and a low standard deviation of 3.63%, suggesting high reproducibility. Correspondingly, the operational lifetime of 376 h is obtained, which is on par with 408 h of devices fabricated in N2. For the devices fabricated in air, relatively high efficiency could be maintained only at low voltages, because of the near balanced injection of carriers under low bias. The measurements of contact potential difference, chemical composition, and surface roughness are used to verify the variation of energy level and surface morphology of films influenced by different ambient gas. These results would offer reasonable guidance for the application of QD-LEDs in actual large-scale production.

  16. Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle deposition

    Directory of Open Access Journals (Sweden)

    Ya-Ju Lee

    2014-05-01

    Full Text Available High-efficient ZnO-based nanorod array light-emitting diodes (LEDs were grown by an oblique-angle deposition scheme. Due to the shadowing effect, the inclined ZnO vapor-flow was selectively deposited on the tip surfaces of pre-fabricated p-GaN nanorod arrays, resulting in the formation of nanosized heterojunctions. The LED architecture composed of the slanted n-ZnO film on p-GaN nanorod arrays exhibits a well-behaving current rectification of junction diode with low turn-on voltage of 4.7 V, and stably emits bluish-white luminescence with dominant peak of 390 nm under the operation of forward injection currents. In general, as the device fabrication does not involve passivation of using a polymer or sophisticated material growth techniques, the revealed scheme might be readily applied on other kinds of nanoscale optoelectronic devices.

  17. Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle deposition

    Science.gov (United States)

    Lee, Ya-Ju; Yang, Zu-Po; Lo, Fang-Yuh; Siao, Jhih-Jhong; Xie, Zhong-Han; Chuang, Yi-Lun; Lin, Tai-Yuan; Sheu, Jinn-Kong

    2014-05-01

    High-efficient ZnO-based nanorod array light-emitting diodes (LEDs) were grown by an oblique-angle deposition scheme. Due to the shadowing effect, the inclined ZnO vapor-flow was selectively deposited on the tip surfaces of pre-fabricated p-GaN nanorod arrays, resulting in the formation of nanosized heterojunctions. The LED architecture composed of the slanted n-ZnO film on p-GaN nanorod arrays exhibits a well-behaving current rectification of junction diode with low turn-on voltage of 4.7 V, and stably emits bluish-white luminescence with dominant peak of 390 nm under the operation of forward injection currents. In general, as the device fabrication does not involve passivation of using a polymer or sophisticated material growth techniques, the revealed scheme might be readily applied on other kinds of nanoscale optoelectronic devices.

  18. Effects of spectral parameters on the light properties of red-green-blue white light-emitting diodes.

    Science.gov (United States)

    Xu, Mingsheng; Zhang, Haoxiang; Zhou, Quanbin; Wang, Hong

    2016-06-01

    Red-green-blue white light-emitting diodes (RGB-WLEDs) have great potential as commercial solid-state lighting devices, as well as visible light communication because of their high color-rendering index (CRI) and high response frequency. The quality of light of an RGB-WLED strongly depends on its spectral parameters. In this study, we fabricated RGB-WLEDs with red, blue, and green LEDs and measured the spectral power distribution (SPD). The experimental SPD is consistent with the calculated spectrum. We also measured the SPDs of LEDs with different peak wavelengths and extracted the spectral parameters, which were then used for modeling. We studied the effect of the wavelength and the full width at half-maximum (FWHM) on both the color rendering index and the luminous efficiency (LE) of the RGB-WLED using simulations. We find that the LE improves as the wavelength of the blue LED increases and the wavelength of the red LED decreases. When the wavelength of the green LED increases, the LE increases first, but later decreases. The CRI of the RGB-WLED increases with the wavelengths of the red, blue, and green LEDs first, but then decreases. The optimal wavelengths and FWHMs for maximum color-rendering and LE of the blue, green, and red LEDs are 466, 536, 606 nm; and 26.0, 34.0, and 19.5 nm, respectively.

  19. Multiscale Micro-Nano Nested Structures: Engineered Surface Morphology for Efficient Light Escaping in Organic Light-Emitting Diodes.

    Science.gov (United States)

    Zhou, Lei; Dong, Xiaoxuan; Zhou, Yun; Su, Wenming; Chen, Xiaolian; Zhu, Yufu; Shen, Su

    2015-12-01

    Various micro-to-nanometer scale structures are extremely attractive for light escaping in organic light-emitting diodes. To develop and optimize such structures, an innovative approach was demonstrated for the first time to fabricate multiscale micro-nano nested structures by photolithography with a well-designed mask pattern followed by a controllable thermal reflow process. The experimental and theoretical characterizations verify that these unique nested structures hold the capability of light concentration, noticeable low haze, and efficient antireflection. As a proof-of-concept, the incorporation of this pattern onto the glass substrate efficiently facilitates light escaping from the device, resulting in current efficiency 1.60 times and external quantum efficiency 1.63 times that of a control flat device, respectively. Moreover, compared to a hexagonally arranged microlens array and quasi-random biomimetic moth eye nanostructures, the nested structures proposed here can magically tune the spatial emission profile to comply with the Lambertian radiation pattern. Hence, this novel structure is expected to be of great potential in related ubiquitous optoelectronic applications and provide scientific inspiration to other novel multiscale micro-nanostructure research.

  20. Light extraction enhancement of AlGaN-based ultraviolet light-emitting diodes by substrate sidewall roughening

    Science.gov (United States)

    Guo, Yanan; Zhang, Yun; Yan, Jianchang; Xie, Haizhong; Liu, Lei; Chen, Xiang; Hou, Mengjun; Qin, Zhixin; Wang, Junxi; Li, Jinmin

    2017-07-01

    The effect of sapphire substrate's sidewall roughening on light extraction of AlGaN-based ultraviolet light-emitting diodes (UV LEDs) is investigated. Finite-difference time-domain simulation reveals that a roughening region for effective light extraction enhancement exists on the substrate's sidewall. Roughening outside the effective roughening region will result in undesirable inward photon scattering and absorption. For TM-polarization-dominated deep-UV LEDs, the effective roughening region is from the substrate's backside to the position about L/2 × tan(θc) away from the substrate's front side, where L is the side length of the LED device and θc is the critical angle of total reflection. In the LED device fabrication, picosecond laser dicing is employed to realize roughening layers on the sapphire substrate's sidewalls. The UV LEDs with three roughening layers have 13.2% higher average light output power (LOP) at 20 mA than those with two roughening layers, thanks to the larger roughening area in the effective roughening region. When additional roughening layers beyond the effective roughening region are applied, the LOP decreases as the simulation predicts. Furthermore, the values of leakage current and forward voltage of these LEDs are consistently below 0.2 μA at -10 V and 5.8-6.0 V at 20 mA, respectively, showing no thermal damage to intrinsic diode performance by the laser processing.

  1. Heat transfer and structure stress analysis of micro packaging component of high power light emitting diode

    Directory of Open Access Journals (Sweden)

    Hsu Chih-Neng

    2013-01-01

    Full Text Available This paper focuses on the heat transfer and structural stress analysis of the micro- scale packaging structure of a high-power light emitting diode. The thermal-effect and thermal-stress of light emitting diode are determined numerically. Light emitting diode is attached to the silicon substrate through the wire bonding process by using epoxy as die bond material. The silicon substrate is etched with holes at the bottom and filled with high conductivity copper material. The chip temperature and structure stress increase with input power consumption. The micro light emitting diode is mounted on the heat sink to increase the heat dissipation performance, to decrease chip temperature, to enhance the material structure reliability and safety, and to avoid structure failure as well. This paper has successfully used the finite element method to the micro-scale light emitting diode heat transfer and stress concentration at the edges through etched holes.

  2. Synthesis, characterization and properties of yellow-light-emitting polyethers containing bis(styryl)anthracene units

    Energy Technology Data Exchange (ETDEWEB)

    Gioti, M., E-mail: mgiot@physics.auth.gr; Pitsalidis, C., E-mail: mgiot@physics.auth.gr; Tzounis, L.; Logothetidis, S., E-mail: logot@auth.gr [Laboratory for Thin Films-Nanosystems and Nanometrology (LTFN), Physics Department, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece); Andreopoulou, A. K.; Kallitsis, J. K. [Department of Chemistry, University of Patras, University Campus, Rio-Patras GR26504, Greece and Foundation for Research and Technology Hellas, Institute of Chemical Engineering Sciences (FORTH/ICE-HT), Platani Str., Patras GR26504 (Greece); Mparmpoutsis, E. [Department of Chemistry, University of Patras, University Campus, Rio-Patras GR26504 (Greece)

    2015-02-17

    Aromatic aliphatic polyethers containing bis(styryl)anthracene units in the main chain separated by flexible spacer of 11 (AND52) or 12 (AND53) methylene units, were synthesized and characterized aiming to be applied as emitting materials in polymer light emitting diode (PLED) devices. The polymers are soluble in common organic solvents and have average molecular weight of about 15kDa. Differentiations owing to an odd-even number of methylene units (χ=11 vs χ=12) are observed in their optical properties in solid state. Thin films as well as PLED devices were fabricated via conventional spin-coating process. Initially, various parameters have been investigated concerning the solubility of the polymers, the effect of film thickness on the electrical properties, and their thermal stability. The optical properties of the two polymers were investigated by NIR-Vis-far UV spectroscopic ellipsometry (SE). The accurate determination of the thickness and the optical constants (refractive index and dielectric function as a function of wavelength) were derived. These provide substantial insights into the final design of the optimum final multi-layer structure of the PLEDs, if we take into account that the external quantum efficiency (EQE) of electroluminescence (EL) strongly depends on the optical interference of the beams of emitted light that have been multiply reflected from the layer interfaces. The morphological characterization of the AND52 and AND53 polymeric thin films was carried out using atomic force microscopy (AFM), while current density-voltage (J-V) characteristics of the devices were studied by electrical measurements. The single PLED devices were switched on at relatively low operation voltages, showing the potential as backplanes for active matrix PLED applications. In this perspective, it can be assumed that further studies of the presented materials will enable the development of flexible PLEDs with the possibility to scale up their dimensions for bigger

  3. A Yellow Emitting InGaN/GaN Nanowires-based Light Emitting Diode Grown on Scalable Quartz Substrate

    KAUST Repository

    Prabaswara, Aditya

    2017-05-08

    The first InGaN/GaN nanowires-based yellow (λ = 590 nm) light-emitting diodes on scalable quartz substrates are demonstrated, by utilizing a thin Ti/TiN interlayer to achieve simultaneous substrate conductivity and transparency.

  4. 10 Mb/s visible light transmission system using a polymer light-emitting diode with orthogonal frequency division multiplexing.

    Science.gov (United States)

    Le, Son T; Kanesan, T; Bausi, F; Haigh, P A; Rajbhandari, S; Ghassemlooy, Z; Papakonstantinou, I; Popoola, W O; Burton, A; Le Minh, H; Cacialli, F; Ellis, A D

    2014-07-01

    We present a newly designed polymer light-emitting diode with a bandwidth of ~350  kHz for high-speed visible light communications. Using this new polymer light-emitting diode as a transmitter, we have achieved a record transmission speed of 10  Mb/s for a polymer light-emitting diode-based optical communication system with an orthogonal frequency division multiplexing technique, matching the performance of single carrier formats using multitap equalization. For achieving such a high data-rate, a power pre-emphasis technique was adopted.

  5. Self-assembly surface modified indium-tin oxide anodes for single-layer light-emitting diodes

    CERN Document Server

    Morgado, J; Charas, A; Matos, M; Alcacer, L; Cacialli, F

    2003-01-01

    We study the effect of indium-tin oxide surface modification by self assembling of highly polar molecules on the performance of single-layer light-emitting diodes (LEDs) fabricated with polyfluorene blends and aluminium cathodes. We find that the efficiency and light-output of such LEDs is comparable to, and sometimes better than, the values obtained for LEDs incorporating a hole injection layer of poly(3,4-ethylene dioxythiophene) doped with polystyrene sulphonic acid. This effect is attributed to the dipole-induced work function modification of indium-tin oxide.

  6. Light emitting conjugated polymers for use in biological detection platforms

    Science.gov (United States)

    Gaylord, Brent S.

    Recent interest in conjugated polymers has grown from their demonstrated utility in various "plastic" and/or "molecular" electronic applications to include organic light emitting diodes (OLED's), thin film transistors and photovoltaics. Due to their intrinsically delocalized electronic structure, these same materials show enormous potential as highly responsive optical reporters for chemical and biological interactions. Inter- and intra-chain energy migration, coupled with the formation of strong electrostatic complexes between opposite charged acceptors, allows for extraordinary modulation of their fluorescent response. When these properties are correlated with a specific biological recognition event, the result is a biosensor with optically enhanced or amplified performance. Such features are highly desirable in detection schemes where the target analyte is in limited supply, as is most often the case. Within these studies we demonstrate how variations in test media composition (i.e. surfactant, buffers, proteins, DNA, etc.) and molecular structure influence those photophysical properties of conjugated polymers related to biosensor design. To this end, both anionic polyphenylenevinylene (PPV) and cationic polyfluorene-cophenylene structures were examined. Model oligomer structures were employed throughout the study for delineating structure-property relationships, as such detailed correlation is inherently more difficult for the less defined polymeric structures (i.e. polydispersity, batch-to-batch variation, purity, etc.). Studies using light scattering and optical spectroscopy highlight the extensive aggregation of these fluorescent, amphiphilic polyelectrolytes in aqueous solution. Variations in chromophore size, charge and concentration provide interesting comparisons in quenching and/or energy transfer processes, as well as, in their interactions with biological molecules. Ultimately, this information was utilized to develop a novel platform for highly

  7. Magnetic field effect in organic light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Niedermeier, Ulrich

    2009-12-14

    The discovery of a magnetic field dependent resistance change of organic light emitting diodes (OLEDs) in the year 2003 has attracted considerable scientific and industrial research interest. However, despite previous progress in the field of organic spin-electronics, the phenomenon of the ''organic magnetoresistance (OMR) effect'' is not yet completely understood. In order to improve the understanding of the microscopic mechanisms which ultimately cause the OMR effect, experimental investigations as well as theoretical considerations concerning the OMR are addressed in this thesis. In polymer-based OLED devices the functional dependencies of the OMR effect on relevant parameters like magnetic field, operating voltage, operating current and temperature are investigated. Based on these results, previously published models for potential OMR mechanisms are critically analyzed and evaluated. Finally, a concept for the OMR effect is favored which suggests magnetic field dependent changes of the spin state of electron-hole pairs as being responsible for changes in current flow and light emission in OLEDs. In the framework of this concept it is possible to explain all results from own measurements as well as results from literature. Another important finding made in this thesis is the fact that the value of the OMR signal in the investigated OLED devices can be enhanced by appropriate electrical and optical conditioning processes. In particular, electrical conditioning causes a significant enhancement of the OMR values, while at the same time it has a negative effect on charge carrier transport and optical device characteristics. These results can be explained by additional results from charge carrier extraction measurements which suggest that electrical conditioning leads to an increase in the number of electronic trap states inside the emission layer of the investigated OLED devices. The positive influence of trap states on the OMR effect is

  8. Multiple night-time light-emitting diode lighting strategies impact grassland invertebrate assemblages.

    Science.gov (United States)

    Davies, Thomas W; Bennie, Jonathan; Cruse, Dave; Blumgart, Dan; Inger, Richard; Gaston, Kevin J

    2017-07-01

    White light-emitting diodes (LEDs) are rapidly replacing conventional outdoor lighting technologies around the world. Despite rising concerns over their impact on the environment and human health, the flexibility of LEDs has been advocated as a means of mitigating the ecological impacts of globally widespread outdoor night-time lighting through spectral manipulation, dimming and switching lights off during periods of low demand. We conducted a three-year field experiment in which each of these lighting strategies was simulated in a previously artificial light naïve grassland ecosystem. White LEDs both increased the total abundance and changed the assemblage composition of adult spiders and beetles. Dimming LEDs by 50% or manipulating their spectra to reduce ecologically damaging wavelengths partially reduced the number of commoner species affected from seven to four. A combination of dimming by 50% and switching lights off between midnight and 04:00 am showed the most promise for reducing the ecological costs of LEDs, but the abundances of two otherwise common species were still affected. The environmental consequences of using alternative lighting technologies are increasingly well established. These results suggest that while management strategies using LEDs can be an effective means of reducing the number of taxa affected, averting the ecological impacts of night-time lighting may ultimately require avoiding its use altogether. © 2017 John Wiley & Sons Ltd.

  9. Yellow Light Energy Transfer Emitting Diodes Based on mixed Quasi-2D Perovskites

    CERN Document Server

    Papadatos, Dionysios; Koutselas, Ioannis

    2016-01-01

    The new class of hybrid organic-inorganic semiconductor (HOIS) materials, based on halide perovskites, is constantly being pursued for applications such as Light Emitting Diodes (LEDs) and solar cells, due to their momentous optoelectronic properties. In this work, we present a single layer LED that operates due to energy transfer effects as well as a simple, instant and low cost method for its fabrication. A LED device based on a mixture of zero dimensional (OD) (CH 3 NH 3 ) 4 PbI 6, two dimensional (2D) (F- C 6 H 4 CH 2 CH 2 NH 2 ) 2 PbI 4 and three dimensional (3D) (CH 3 NH 3 )PbI 3 HOIS, is presented for the first time. The final composite material manifests simple, yet unique energy transfer optical effects, while its electroluminescence exhibits excitonic recombination bright yellow light, peaked at 592 nm. LED device fabricated under ambient air, readily functions at room temperature and low voltages. As for the active layer, it exhibited substantial film continuity in any form of deposition. Finally, ...

  10. Organic semiconductor heterojunction and its application in organic light-emitting diodes (Conference Presentation)

    Science.gov (United States)

    Ma, Dongge

    2016-09-01

    Organic light-emitting diodes (OLEDs) have drawn increasing attention as the next generation displays and lighting sources. High efficiency and long lifetime are necessary for OLEDs in practical applications. In conventional OLEDs, the charge carriers are directly injected into the organic transport layers from electrodes, the injection barriers between the organic transport layers and electrodes are unavoidable due to the mismatch between the work function of metal electrode and the energy level of charge-transport layer, which greatly affects the performance of fabricated OLEDs. Furthermore, tandem OLEDs, which are fabricated by vertically connecting several individual electroluminescent (EL) units together in series via an appropriate charge generation layer (CGL) with the entire device driven by a single power source can significantly enhance current efficiency and stability, but their performance is strongly dependent on the used CGL, especially the power efficiency is difficult to enhance due to the increase of working voltage. Recently we found that organic semiconductor heterojunctions show efficient charge generation effect and as CGL, not only double the luminance and current efficiency, but also greatly improve the power efficiency, which is difficult in tandem OLEDs based on conventional CGLs. We also realized electrode-independent charge injection by using organic semiconductor heterojuncrions as injectors in OLEDs, and obtained comparable electroluminescent (EL) performance with that of conventional OLEDs. Here, we report the results of tandem OLEDs based on organic semiconductor heterojunctions as CGL and OLEDs using organic semiconductor heterojunctions as injectors, and discuss this working mechanism in detail.

  11. Benzophenones as Generic Host Materials for Phosphorescent Organic Light-Emitting Diodes.

    Science.gov (United States)

    Jhulki, Samik; Seth, Saona; Ghosh, Avijit; Chow, Tahsin J; Moorthy, Jarugu Narasimha

    2016-01-20

    Despite the fact that benzophenone has traditionally served as a prototype molecular system for establishing triplet state chemistry, materials based on molecular systems containing the benzophenone moiety as an integral part have not been exploited as generic host materials in phosphorescent organic light-emitting diodes (PhOLEDs). We have designed and synthesized three novel host materials, i.e., BP2-BP4, which contain benzophenone as the active triplet sensitizing molecular component. It is shown that their high band gap (3.91-3.93 eV) as well as triplet energies (2.95-2.97 eV) permit their applicability as universal host materials for blue, green, yellow, and red phosphors. While they serve reasonably well for all types of dopants, excellent performance characteristics observed for yellow and green devices are indeed the hallmark of benzophenone-based host materials. For example, maximum external quantum efficiencies of the order of 19.2% and 17.0% were obtained from the devices fabricated with yellow and green phosphors using BP2 as the host material. White light emission, albeit with rather poor efficiencies, has been demonstrated as a proof-of-concept by fabrication of co-doped and stacked devices with blue and yellow phosphors using BP2 as the host material.

  12. Developing Quantum Dot Phosphor-Based Light-Emitting Diodes for Aviation Lighting Applications

    Directory of Open Access Journals (Sweden)

    Fengbing Wu

    2012-01-01

    Full Text Available We have investigated the feasibility of employing quantum dot (QD phosphor-based light-emitting diodes (LEDs in aviation applications that request Night Vision Imaging Systems (NVIS compliance. Our studies suggest that the emerging QD phosphor-based LED technology could potentially be superior to conventional aviation lighting technology by virtue of the marriage of tight spectral control and broad wavelength tunability. This largely arises from the fact that the optical properties of semiconductor nanocrystal QDs can be tailored by varying the nanocrystal size without any compositional changes. It is envisioned that the QD phosphor-based LEDs hold great potentials in cockpit illumination, back light sources of monitor screens, as well as the LED indicator lights of aviation panels.

  13. Increasing the extraction efficiency of blue light emitting diodes via laser patterned Ga-polar p-GaN surface

    Energy Technology Data Exchange (ETDEWEB)

    Zuo, Zhiyuan; Liu, Duo; Zhang, Baitao; He, Jingliang; Liu, Hong; Xu, Xiangang [State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100 (China)

    2011-09-15

    We report here the laser patterned Ga-polar p-GaN surface to improve the light extraction efficiency of GaN based blue light emitting diodes (LEDs) by using a pulsed UV laser in combination with a mirror scanner. The patterns created on p-GaN are confirmed to be suitable for light extraction and a 34.9% enhancement of the electroluminescent (EL) emission intensity has been obtained. Detailed discussions on the effects of laser on LEDs and the angular dependence of the emission profile are also provided. This method could be extended to other III-V LEDs and LEDs on SiC for fabricating highly efficient LEDs. The schematic of laser fabrication equipment, SEM image of patterned p-GaN surface and guided-modes extraction photograph of patterned GaN epilayer. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Organic light emitting field effect transistors based on an ambipolar p-i-n layered structure

    Science.gov (United States)

    Maiorano, V.; Bramanti, A.; Carallo, S.; Cingolani, R.; Gigli, G.

    2010-03-01

    A bottom contact/top gate ambipolar "p-i-n" layered light emitting field effect transistor with the active medium inserted between two doped transport layers, is reported. The doping profile results crucial to the capability of emitting light, as well as to the electrical characteristics of the device. In this sense, high output current at relative low applied gate/drain voltage and light emission along the whole large area transistor channel are observed, putting the basis to full integration of organic light emitting field effect transistors in planar complex devices.

  15. High-flux focusable color-tunable and efficient white-light-emitting diode light engine for stage lighting

    DEFF Research Database (Denmark)

    Chakrabarti, Maumita; Pedersen, Henrik Chresten; Petersen, Paul Michael

    2016-01-01

    A color mixing light-emitting diode (LED) light engine that can replace 2-kW halogen–Fresnel spotlightwith high-luminous flux in excess of 20,000 lm is reported for applications in professional stage and studio lighting.The light engine focuses and mixes the light from 210 LEDs of five different...... colors through a microlens array(MA) at the gate of ∅50 mm. Hence, it produces homogeneous color-mixed tunable white light from 3000 to6000 K that can be adjustable from flood to spot position providing 10% translational loss, whereas the correspondingloss from the halogen–Fresnel spotlight is 37......%. The design, simulation, and optimization of the lightengine is described and compared to the experimental characterization of a prototype. The light engine is optimizedthrough the simulated design of reflector, total internal reflection lens, and MA, as well as the number ofLEDs. An optical efficiency of 59...

  16. New Rare-Earth Containing (Sr1-yEuy)2Al2Si10N14O4 Phosphors for Light-Emitting Diodes

    Institute of Scientific and Technical Information of China (English)

    Liu Yuhuan; Liu Rushi

    2007-01-01

    Remarkable progress was made in the development of white-light-emitting diodes (LEDs). White LEDs provided a light element having a semiconductor InGaN light-emitting chip (blue or UV LEDs) and luminescent phosphors. Here we reported the sialon s-phase of (Sr,Eu)2Al2Si10N14O4. Eu2+ activator ions that were substituted for the strontium site represented a new type of yellow-green phosphor that could be excited by blue LEDs used for application in the fabrication of white LEDs.

  17. Design and Analysis of a Quantum Well Light Emitting Triode.

    Science.gov (United States)

    Rajagopalan, Bharath

    1992-01-01

    We present, for the first time, the design and analysis of a novel, quantum well light emitting triode (QWLET), based on a bipolar junction transistor with a quantum well in the base. Modulation of the collector -base voltage controls the radiation emission from the quantum well by sweeping the space-charge region across the well. Detailed analysis is provided for an npn-Al_{.35 }Ga_{.65}As transistor with an undoped GaAs quantum well. Calculations indicate that modulation rates in excess of 1 GHz are possible. The switching-off process is limited by thermionic emission of majority carriers out of the well, whereas the turn -on is controlled by the recombination lifetime in the well. Our calculations reveal that the thermionic emission lifetime of these carriers is ~0.1 ns at an applied field of 5 times 10 ^4 V/cm, while the radiative lifetime is approximately 1-2 ns for carrier densities in excess of 10^{12} cm ^{-2} in the well. For material systems, or choice of parameters, where thermionic emission is insignificant, field induced tunneling of carriers out of the well is considered as a quenching mechanism. However, the tunneling lifetime is ~3.1 mus at a field of 1 times 10^5 V/cm, and therefore we propose a novel scheme to reduce this lifetime to ~3.3 ns through impurity assisted tunneling. Our calculated results also include a capture cross-section of 10^{-14} cm ^2 for carriers into the well, a B coefficient for radiative recombination of 2.4 times 10^{-10} cm ^3/s, and optical power generation of 0.15 muW per μm of length per mA of drive current and peaked at 855 nm. The voltage amplitude needed to modulate the radiation is on the order of 1 to 2 volts.

  18. Recent advances in light outcoupling from white organic light-emitting diodes

    Science.gov (United States)

    Gather, Malte C.; Reineke, Sebastian

    2015-01-01

    Organic light-emitting diodes (OLEDs) have been successfully introduced to the smartphone display market and have geared up to become contenders for applications in general illumination where they promise to combine efficient generation of white light with excellent color quality, glare-free illumination, and highly attractive designs. Device efficiency is the key requirement for such white OLEDs, not only from a sustainability perspective, but also because at the high brightness required for general illumination, losses lead to heating and may, thus, cause rapid device degradation. The efficiency of white OLEDs increased tremendously over the past two decades, and internal charge-to-photon conversion can now be achieved at ˜100% yield. However, the extraction of photons remains rather inefficient (typically <30%). Here, we provide an introduction to the underlying physics of outcoupling in white OLEDs and review recent progress toward making light extraction more efficient. We describe how structures that scatter, refract, or diffract light can be attached to the outside of white OLEDs (external outcoupling) or can be integrated close to the active layers of the device (internal outcoupling). Moreover, the prospects of using top-emitting metal-metal microcavity designs for white OLEDs and of tuning the average orientation of the emissive molecules within the OLED are discussed.

  19. Characterization of four-color multi-package white light-emitting diodes combined with various green monochromatic phosphor-converted light-emitting diodes

    Science.gov (United States)

    Oh, Ji Hye; Lee, Keyong Nam; Do, Young Rag

    2012-03-01

    In this study, several combinations of multi-package white light-emitting diodes (LEDs), which combine an InGaN blue LED with green, amber, and red phosphor-converted LEDs (pc-LEDs), were characterized by changing the peak wavelength of green pc-LEDs between 515nm and 560nm (515, 521, 530, 540, 550, 560nm) in color temperature of 6,500K and 3,500K. Various green monochromatic pc-LEDs were fabricated by capping a long-wave pass-filter (LWPF) on top of pc-LEDs to improve luminous efficacy and color purity. LWPF-capped green monochromatic pc-LED can address the drawback of green semiconductor-type III-V LED, such as low luminous efficacy in the region of green gap wavelength. Luminous efficacy and color rendering index (CRI) of multi-package white LEDs are compared with changing the driving current of individual LED in various multi-package white LEDs. This study provides a best combination of four-color multi-package white LEDs which has high luminous efficacy and good CRI.

  20. Hybrid white light sources based on layer-by-layer assembly of nanocrystals on near-UV emitting diodes

    Science.gov (United States)

    Nizamoglu, Sedat; Demir, Hilmi Volkan

    2007-10-01

    We present the design, growth, fabrication, integration and characterization of alternative hybrid white light sources based on the controlled layer-by-layer assembly of nanocrystals on UV-emitting nitride diodes for adjustable white light parameters. We hybridize CdSe/ZnS core-shell nanocrystals of different sizes (1.9-3.2-5.2 nm) on InGaN/GaN LEDs as a near-UV excitation source at 383 nm for efficient pumping. The first device includes layer-by-layer assembly of dichromatic cyan- and red-emitting nanocrystals (λPL = 504-615 nm) leading to the tristimulus coordinates (x = 0.37,y = 0.46); the second device uses the trichromatic combination of layer-by-layer hybridized cyan-, yellow- and red-emitting nanocrystals (λPL = 504-580-615 nm), yielding (x = 0.38,y = 0.48). Such layer-by-layer hybridization offers the advantages of precisely controlling individual nanocrystal film thicknesses and order in addition to concentrations. By utilizing such multiple combinations of nanocrystals in the assembly, the light parameters are well controlled and adjusted. Leveraging rapidly advancing UV technology into efficient lighting with nanocrystal based color conversion, it is critical to develop and demonstrate hybrid light sources on UV pumping platforms.

  1. Finding the acceleration and speed of a light-emitting object on an inclined plane with a smartphone light sensor

    Science.gov (United States)

    Kapucu, Serkan

    2017-09-01

    This study investigates how the acceleration and speed of a light-emitting object on an inclined plane may be determined using a smartphone’s light sensor. A light-emitting object was released from the top of an inclined plane and its illuminance values were detected by a smartphone’s light sensor during its subsequent motion down the plane. Using the illuminance and time values recorded by the smartphone, the distances between the sensor and the light-emitting object can be calculated. From these known distance and time values, the uniform acceleration and speed of the light-emitting object at any time could also be determined. A second method was also used to determine these values, i.e. the analysis of video-recordings of the light-emitting object during its motion. The values found by these two different methods were in good agreement. Thus, this experiment demonstrates that a smartphone’s light sensor can be used as a reliable instrument to determine the constant acceleration and speed of light-emitting objects.

  2. Optical properties of highly polarized InGaN light-emitting diodes modified by plasmonic metallic grating.

    Science.gov (United States)

    Chen, Hong; Fu, Houqiang; Lu, Zhijian; Huang, Xuanqi; Zhao, Yuji

    2016-05-16

    We implement finite-difference time-domain (FDTD) method to simulate the optical properties of highly polarized InGaN light emitting diodes (LEDs) coupled with metallic grating structure. The Purcell factor (Fp), light extraction efficiency (LEE), internal quantum efficiency (IQE), external quantum efficiency (EQE), and modulation frequency are calculated for different polarized emissions. Our results show that light polarization has a strong impact on Fp and LEE of LEDs due to their coupling effects with the surface plasmons (SPs) generated by metallic grating. Fp as high as 34 and modulation frequency up to 5.4 GHz are obtained for a simulated LED structure. Furthermore, LEE, IQE and EQE can also be enhanced by tuning the coupling between polarized emission and SPs. These results can serve as guidelines for the design and fabrication of high efficiency and high speed LEDs for the applications of solid-state lighting and visible-light communication.

  3. Ordered and ultrathin reduced graphene oxide LB films as hole injection layers for organic light-emitting diode.

    Science.gov (United States)

    Yang, Yajie; Yang, Xiaojie; Yang, Wenyao; Li, Shibin; Xu, Jianhua; Jiang, Yadong

    2014-01-01

    In this paper, we demonstrated the utilization of reduced graphene oxide (RGO) Langmuir-Blodgett (LB) films as high performance hole injection layer in organic light-emitting diode (OLED). By using LB technique, the well-ordered and thickness-controlled RGO sheets are incorporated between the organic active layer and the transparent conducting indium tin oxide (ITO), leading to an increase of recombination between electrons and holes. Due to the dramatic increase of hole carrier injection efficiency in RGO LB layer, the device luminance performance is greatly enhanced comparable to devices fabricated with spin-coating RGO and a commercial conducting polymer PEDOT:PSS as the hole transport layer. Furthermore, our results indicate that RGO LB films could be an excellent alternative to commercial PEDOT:PSS as the effective hole transport and electron blocking layer in light-emitting diode devices.

  4. Pilot perception of light emitting diodes versus incandescent elevated runway guard lights

    Science.gov (United States)

    Stevens, Hilary

    Pilots must understand and be aware of the purpose of each airport sign, light and marking, for there are numerous. The Federal Aviation Administration (FAA) is planning on replacing the current incandescent lighting with far more economical LED airport lighting. In preparation for this change, two experiments were conducted for this thesis. Experiment 1 attempted to determine what pilots know about the meaning of the signs, markings and lights on the taxiways and runways through a questionnaire that was developed with the FAA. Experiment 2 evaluated pilot perception of LED lighting compared to current incandescent elevated runway guard lights. The meaning of airfield lights is not often stressed in pilot training and many pilots are unsure as to the intended purpose of specific lighting. Experiment 1 attempted to evaluate the uncertainty of these caution lights. In experiment 1, a knowledge survey about runway lighting and markings was created. The survey was developed by a flight instructor and approved by the Federal Aviation Administration. The surveys were given to about 150 pilots with varying flight ratings and experience levels. Experiment 1 results determined that there is a need for more intensive or remedial training on some airport signals. Results also showed that some runway signals need to have greater cue salience. Experiment 2 was designed to replace the existing elevated runway guard lights at a local airport from incandescent lights to light emitting diodes. Permission to cross onto the runways from a taxiway at airports must be given by the air traffic (ground) controller. The demarcation between taxiway and runway is indicated by the elevated runway guard light (ERGL), which signals to the taxiing pilot to hold short at the border of the runway until permission to cross the intersection is obtained. Incandescent lights are currently installed in the ERGLs. Experiment 2 of this thesis was designed to evaluate pilot's perceptions of the elevated

  5. Selective-area growth of periodic nanopyramid light-emitting diode arrays on GaN/sapphire templates patterned by multiple-exposure colloidal lithography.

    Science.gov (United States)

    Xiong, Zhuo; Wei, Tongbo; Zhang, Yonghui; Zhang, Xiang; Yang, Chao; Liu, Zhiqiang; Yuan, Guodong; Li, Jinmin; Wang, Junxi

    2017-03-17

    Gallium nitride-based nanopyramid light-emitting diodes are a promising technology to achieve highly efficient solid-state lighting and beyond. Here, periodic nanopyramid light-emitting diode arrays on gallium nitride/sapphire templates were fabricated by selective-area metalorganic chemical vapor deposition and multiple-exposure colloidal lithography. The electric field intensity distribution of incident light going through polystyrene microspheres and photoresist are simulated using finite-different time-domain method. Nitrogen as the carrier gas and a low V/III ratio (ratio of molar flow rate of group-V to group-III sources) are found to be important in order to form gallium nitride nanopyramid. In addition, a broad yellow emission in photoluminescence and cathodoluminescence spectra were observed. This phenomena showed the potential of nanopyramid light-emitting diodes to realize long wavelength visible emissions.

  6. Selective-area growth of periodic nanopyramid light-emitting diode arrays on GaN/sapphire templates patterned by multiple-exposure colloidal lithography

    Science.gov (United States)

    Xiong, Zhuo; Wei, Tongbo; Zhang, Yonghui; Zhang, Xiang; Yang, Chao; Liu, Zhiqiang; Yuan, Guodong; Li, Jinmin; Wang, Junxi

    2017-03-01

    Gallium nitride-based nanopyramid light-emitting diodes are a promising technology to achieve highly efficient solid-state lighting and beyond. Here, periodic nanopyramid light-emitting diode arrays on gallium nitride/sapphire templates were fabricated by selective-area metalorganic chemical vapor deposition and multiple-exposure colloidal lithography. The electric field intensity distribution of incident light going through polystyrene microspheres and photoresist are simulated using finite-different time-domain method. Nitrogen as the carrier gas and a low V/III ratio (ratio of molar flow rate of group-V to group-III sources) are found to be important in order to form gallium nitride nanopyramid. In addition, a broad yellow emission in photoluminescence and cathodoluminescence spectra were observed. This phenomena showed the potential of nanopyramid light-emitting diodes to realize long wavelength visible emissions.

  7. Assessing the use of Low Voltage UV-light Emitting Miniature LEDs for Marine Biofouling Control

    Science.gov (United States)

    2016-07-01

    UNCLASSIFIED UNCLASSIFIED Assessing the use of Low Voltage UV-light Emitting Miniature LEDs for Marine Biofouling Control Richard...settling organisms. The introduction of miniature UV light emitting diodes ( LEDs ) as a light source enables them to be embedded into thin, flexible...pilot investigations of the efficacy of UV LEDs for the prevention of marine biofouling in a simulated vessel seachest environment and compare this

  8. Improved efficiency in blue phosphorescent organic light-emitting diodes by the stepwise doping structure

    Science.gov (United States)

    Yang, Liping; Wang, Xiaoping; Kou, Zhiqi; Ji, Changyan

    2017-04-01

    The electro-optical properties of the blue phosphorescent organic light-emitting diodes (PHOLEDs) can be affected by the stepwise doping structure in the emitting layer (EML). A series of multi-EML devices with different doping concentration of blue dopant (FIrpic) are fabricated. The effect of the stepwise doping structure close to the electron transport layer is more obvious than that close to the hole transport layer. When the doping concentration increases gradually from the hole injection side to the electron injection side, the maximum values of the luminance, current and power efficiency can reach to 9745 cd/m2 (at 9 V), 32.0 cd/A and 25.1 lm/W in the device with the asymmetric tri-EML structure, which is improved by about 10% compared with that in the bi-EML device. When the number of the EML is four, the performance of the device becomes worse because of the interface effect resulting from different concentration of dopant.

  9. Ultrastrong light-matter coupling in electrically doped microcavity organic light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Mazzeo, M., E-mail: marco.mazzeo@unisalento.it [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); Genco, A. [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); Gambino, S. [NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); CBN, Istituto Italiano Tecnologia, Via Barsanti 1, 73010 Lecce (Italy); Ballarini, D.; Mangione, F.; Sanvitto, D. [NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); Di Stefano, O.; Patanè, S.; Savasta, S. [Dipartimento di Fisica e Scienze della Terra, Università di Messina, Viale F. Stagno d' Alcontres 31, 98166 Messina (Italy); Gigli, G. [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); CBN, Istituto Italiano Tecnologia, Via Barsanti 1, 73010 Lecce (Italy)

    2014-06-09

    The coupling of the electromagnetic field with an electronic transition gives rise, for strong enough light-matter interactions, to hybrid states called exciton-polaritons. When the energy exchanged between light and matter becomes a significant fraction of the material transition energy an extreme optical regime called ultrastrong coupling (USC) is achieved. We report a microcavity embedded p-i-n monolithic organic light emitting diode working in USC, employing a thin film of squaraine dye as active layer. A normalized coupling ratio of 30% has been achieved at room temperature. These USC devices exhibit a dispersion-less angle-resolved electroluminescence that can be exploited for the realization of innovative optoelectronic devices. Our results may open the way towards electrically pumped polariton lasers.

  10. Efficient Light Extraction from Organic Light-Emitting Diodes Using Plasmonic Scattering Layers

    Energy Technology Data Exchange (ETDEWEB)

    Rothberg, Lewis

    2012-11-30

    Our project addressed the DOE MYPP 2020 goal to improve light extraction from organic light-emitting diodes (OLEDs) to 75% (Core task 6.3). As noted in the 2010 MYPP, “the greatest opportunity for improvement is in the extraction of light from [OLED] panels”. There are many approaches to avoiding waveguiding limitations intrinsic to the planar OLED structure including use of textured substrates, microcavity designs and incorporating scattering layers into the device structure. We have chosen to pursue scattering layers since it addresses the largest source of loss which is waveguiding in the OLED itself. Scattering layers also have the potential to be relatively robust to color, polarization and angular distributions. We note that this can be combined with textured or microlens decorated substrates to achieve additional enhancement.

  11. Investigating the Relationship between Knitted Fabric Porosity and Light Permeability

    Directory of Open Access Journals (Sweden)

    Manoj Kumar Imrith

    2016-01-01

    Full Text Available The present paper attempts to investigate the relationship between fabric porosity and light permeability of the knitted structures, namely, rib 1 × 1, rib 2 × 1, single jersey, and plain structure. The rationale is that pores (in a fabric would allow light to pass through but at the same time provide a quantitative assessment of the UV light permeability of the knitted fabrics, an indication of the protective capacity of the fabrics against UV radiation. The porosity and corresponding light permeability of the knitted structures were measured after varying the following knitting parameters: stitch length, stitch density, and tension on the machine. Furthermore, this work has enabled the development of an apparatus that can measure the amount of light transmitted through the knitted fabrics. The results generated by the equipment were validated through the use of regression equations.

  12. Alternative approaches of SiC & related wide bandgap materials in light emitting & solar cell applications

    Science.gov (United States)

    Wellmann, Peter; Syväjärvi, Mikael; Ou, Haiyan

    2014-03-01

    Materials for optoelectronics give a fascinating variety of issues to consider. Increasingly important are white light emitting diode (LED) and solar cell materials. Profound energy savings can be done by addressing new materials. White light emitting diodes are becoming common in our lighting scene. There is a great energy saving in the transition from the light bulb to white light emitting diodes via a transition of fluorescent light tubes. However, the white LEDs still suffer from a variety of challenges in order to be in our daily use. Therefore there is a great interest in alternative lighting solutions that could be part of our daily life. All materials create challenges in fabrication. Defects reduce the efficiency of optical transitions involved in the light emitting diode materials. The donor-acceptor co-doped SiC is a potential light converter for a novel monolithic all-semiconductor white LED. In spite of considerable research, the internal quantum efficiency is far less than theoretically predicted and is likely a fascinating scientific field for studying materials growth, defects and optical transitions. Still, efficient Si-based light source represents an ongoing research field in photonics that requires high efficiency at room temperature, wavelength tuning in a wide wavelength range, and easy integration in silicon photonic devices. In some of these devices, rare earth doped materials is considered as a potential way to provide luminescence spanning in a wide wavelength range. Divalent and trivalent oxidation states of Eu provide emitting centers in the visible region. In consideration, the use of Eu in photonics requires Eu doped thin films that are compatible with CMOS technology but for example faces material science issues like a low Eu solid solubility in silica. Therefore approaches aim to obtain efficient light emission from silicon oxycarbide which has a luminescence in the visible range and can be a host material for rare earth ions. The

  13. Manufacture and Evaluation of Light Emitting Diode Package Substrate Using Flexible Printed Circuit Board.

    Science.gov (United States)

    Park, Jung-Kab; Shin, Jin-Ha; Jung, Mun-Gi; Shigehisa, Tomabechi; Park, Hwa-Sun; Suh, Su-Jeong

    2015-10-01

    Unlike other light sources such as fluorescent lamps and incandescent bulbs, light-emitting diodes (LED) convert 70-80% of energy into heat. If the heat produced an LED chip is not effectively released, its luminous efficiency and lifespan are reduced. Therefore, as a method effectively release heat, an LED PKG substrate containing a heat-releasing material with excellent thermal conductance was fabricated, and its thermal resistance and luminous efficiency were analyzed. In this experiment, a thin polyimide film with excellent ductility was used to fabricate the LED PKG substrate. A 35-μm-thick Cu foil with excellent thermal conductance was subjected to high temperature and pressure and attached to both sides of the polyimide film. By electroplating Ag or Au, which has excellent thermal conductance, for us as the electrode and heat-releasing material, LED PKG substrate was fabricated with a thickness of approximately 170 μm. (-40 °C --> RT --> 120 °C). The results revealed that the LED PKG substrate having a Ag electrode with excellent thermal conductance had an excellent thermal resistance of approximately 4.2 °C/W (Au electrode: 5.6 °C/W). The luminous flux after 100 cycles in the thermal shock test was reduced by approximately 0.09% (Au electrode: 2.77%), indicating that the LED PKG substrate had excellent thermal resistance without any mechanical and material defects in a rapid-temperature-changing environment. The advantages and excellent thermal resistance can be exploited in cellular phones and LCD panels, and heat-releasing problems in thin panels be solved.

  14. Bright hybrid white light-emitting quantum dot device with direct charge injection into quantum dot

    Science.gov (United States)

    Cao, Jin; Xie, Jing-Wei; Wei, Xiang; Zhou, Jie; Chen, Chao-Ping; Wang, Zi-Xing; Jhun, Chulgyu

    2016-12-01

    A bright white quantum dot light-emitting device (white-QLED) with 4-[4-(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl]-2- [3-(tri-phenylen-2-yl)phen-3-yl]quinazoline deposited on a thin film of mixed green/red-QDs as a bilayer emitter is fabricated. The optimized white-QLED exhibits a turn-on voltage of 3.2 V and a maximum brightness of 3660 cd/m2@8 V with the Commission Internationale de l’Eclairage (CIE) chromaticity in the region of white light. The ultra-thin layer of QDs is proved to be critical for the white light generation in the devices. Excitation mechanism in the white-QLEDs is investigated by the detailed analyses of electroluminescence (EL) spectral and the fluorescence lifetime of QDs. The results show that charge injection is a dominant mechanism of excitation in the white-QLED. Project supported by the National Natural Science Foundation of China (Grant No. 21302122) and the Science and Technology Commission of Shanghai Municipality, China (Grant No. 13ZR1416600).

  15. White light-emitting diodes based on nonpolar and semipolar gallium nitride orientations

    Science.gov (United States)

    Demille, Natalie Fellows

    Gallium nitride has become one of the key components when fabricating white light-emitting diodes. Its use as the blue source in conjunction with a wavelength converter such as the yellow emitting phosphor YAG:Ce 3+ is a technology that is commercially available and usable for solid state lighting applications. Currently available white phosphor-based LEDs (pcLEDs) use the basal plane of wurtzite GaN as their source. Although research over the past couple decades has developed this technology into devices with good photometric performance and high reliability, the introduction of nonbasal plane wurtzite GaN orientations have benefits over basal plane GaN that can be incorporated into the white LED. The focus of this research deals with exploring white illumination on nonpolar and semipolar planes of GaN. Light extraction techniques will be described that allowed for high output powers and efficiencies on the c-plane as well as the (1100), (10 11), and (1122) planes of GaN. With higher performing devices, white pcLEDs were fabricated on c-plane, m-plane, and the (1011) semipolar plane. The novelty in the present research is producing white LEDs with nonbasal plane diodes which exhibit optical polarization anisotropy. This feature, absent on the basal plane, allows for tuning photometric quantities both electrically and optically. This is demonstrated on pcLEDs as well as dichromatic LEDs comprised solely of InGaN diodes. As a consequence of these measurements, an apparent optical polarization was seen to be occurring in the luminescence of the YAG:Ce3+ when the system absorbed linearly polarized light. Polarized emission in YAG:Ce3+ was explored by obtaining single crystals of YAG:Ce3+ with different planar orientations. The experiments led to the conclusion that crystal orientation plays no part in the optical polarization. It is suggested that the cause is a result of electric dipole transitions given by various selection rules between the Ce 3+ ion's 4f and 5d

  16. Beacon system based on light-emitting diode sources for runways lighting

    Science.gov (United States)

    Montes, Mario González; Vázquez, Daniel; Fernandez-Balbuena, Antonio A.; Bernabeu, Eusebio

    2014-06-01

    New aeronautical ground lighting techniques are becoming increasingly important to ensure the safety and reduce the maintenance costs of the plane's tracks. Until recently, tracks had embedded lighting systems whose sources were based on incandescent lamps. But incandescent lamps have several disadvantages: high energy consumption and frequent breakdowns that result in high maintenance costs (lamp average life-time is ˜1500 operating hours) and the lamp's technology has a lack of new lighting functions, such as signal handling and modification. To solve these problems, the industry has developed systems based on light-emitting diode (LED) technology with improved features: (1) LED lighting consumes one tenth the power, (2) it improves preventive maintenance (an LED's lifetime range is between 25,000 and 100,000 hours), and (3) LED lighting technology can be controlled remotely according to the needs of the track configuration. LEDs have been in use for more than three decades, but only recently, around 2002, have they begun to be used as visual aids, representing the greatest potential change for airport lighting since their inception in the 1920s. Currently, embedded LED systems are not being broadly used due to the specific constraints of the rules and regulations of airports (beacon dimensions, power system technology, etc.). The fundamental requirements applied to embedded lighting systems are to be hosted on a volume where the dimensions are usually critical and also to integrate all the essential components for operation. An embedded architecture that meets the lighting regulations for airport runways is presented. The present work is divided into three main tasks: development of an optical system to optimize lighting according to International Civil Aviation Organization, manufacturing prototype, and model validation.

  17. Retinal endoilluminator toxicity of xenon and light-emitting diode (LED) light source: rabbit model.

    Science.gov (United States)

    Aydin, Bahri; Dinç, Erdem; Yilmaz, S Necat; Altiparmak, U Emrah; Yülek, Fatma; Ertekin, Sevda; Yilmaz, Mustafa; Yakın, Mehmet

    2014-09-01

    This study evaluates retinal toxicity due to endoillumination with the light-emitting diode (LED) light source in comparison to endoillumination with xenon light source. Twenty-five eyes of 14 New Zealand pigmented rabbits were used in the study. The LED light (Omesis Medical Systems, Turkey) group was composed of 7 right eyes, while the other 7 right eyes constituted the xenon group (420 nm filter, 357mW/cm(2)) (Bright Star; DORC, Zuidland, Netherlands). Eleven untreated left eyes composed the control group. Twenty gauge pars plana incision 1.5 mm behind the limbus was performed in the right eyes. Twenty gauge bullet type fiberoptic endoilluminator was inserted into the eye from the incision without any pars plana vitrectomy. Fiberoptic endoilluminator was placed in such a way that it was directed toward visual streak of the rabbit retina with a 5 mm distance to retinal surface. Endoillumination was then applied for 20 min with a maximum light intensity for LED and xenon light. In left control eyes, no surgical procedure and no endoillumination were performed. One week after the endoillumination procedure, both eyes of the rabbits were enucleated following electroretinography. Sections stained with hematoxylin and eosin to evaluate morphologic changes. Retina tissues were assessed by active caspase-3 staining. There was no difference in the shape of the waveforms recorded in the eyes endoilluminated with LED light and xenon light sources compared to control eyes both before and after endoillumination application (p > 0.05). Microscopic evaluation of the retinas with hematoxylin and eosin staining demonstrated that all study groups have normal histologic properties similar to control group. No apoptosis positive cells were found within all sections in all groups. When the LED light source is used with maximum power and limited duration for endoillumination in rabbit eyes it does not produce phototoxic effects that may be detectable by electrophysiology

  18. Preliminary evaluation of discomfort glare from organic light-emitting diode and edge-lit light-emitting diode lighting panels.

    Science.gov (United States)

    Mou, Xi; Freyssinier, Jean Paul; Narendran, Nadarajah; Bullough, John D

    2017-05-01

    The organic light-emitting diode (OLED) is an area light source, and its primary competing technology is the edge-lit light-emitting diode (LED) panel. Both technologies are similar in shape and appearance, but there is little understanding of how people perceive discomfort glare (DG) from area sources. The objective of this study was to evaluate the DG of these two technologies under similar operating conditions. Additionally, two existing DG models were compared to evaluate the correlation between predicted values and observed values. In an earlier study, we found no statistically significant difference in human response in terms of DG between OLED and edge-lit LED panels when the two sources produced the same luminous stimulus. The range of testing stimulus was expanded to test different panel luminances at three background illuminations. The results showed no difference in perceived glare between the panels, and, as the background illumination increased, the perceived glare decreased. In other words, both appeared equally glary beyond a certain luminance and background illumination. We then compared two existing glare models with the observed values and found that one model showed a good estimation of how humans perceive DG. That model was further modified to increase its power.

  19. Preliminary evaluation of discomfort glare from organic light-emitting diode and edge-lit light-emitting diode lighting panels

    Science.gov (United States)

    Mou, Xi; Freyssinier, Jean Paul; Narendran, Nadarajah; Bullough, John D.

    2017-05-01

    The organic light-emitting diode (OLED) is an area light source, and its primary competing technology is the edge-lit light-emitting diode (LED) panel. Both technologies are similar in shape and appearance, but there is little understanding of how people perceive discomfort glare (DG) from area sources. The objective of this study was to evaluate the DG of these two technologies under similar operating conditions. Additionally, two existing DG models were compared to evaluate the correlation between predicted values and observed values. In an earlier study, we found no statistically significant difference in human response in terms of DG between OLED and edge-lit LED panels when the two sources produced the same luminous stimulus. The range of testing stimulus was expanded to test different panel luminances at three background illuminations. The results showed no difference in perceived glare between the panels, and, as the background illumination increased, the perceived glare decreased. In other words, both appeared equally glary beyond a certain luminance and background illumination. We then compared two existing glare models with the observed values and found that one model showed a good estimation of how humans perceive DG. That model was further modified to increase its power.

  20. An experimental investigation of a 100-W high-power light-emitting diode array using vapor chamber–based plate

    Directory of Open Access Journals (Sweden)

    Ping Zhang

    2015-11-01

    Full Text Available In this study, a compact 100-W input power light-emitting diode array vapor chamber–based plate has been fabricated to investigate the thermal performance. To make a comparison, a typical commercial chip on board–type light-emitting diode array using a copper-based plate which has the same chip layout and the same power input was also investigated. The surface temperature distribution and total thermal resistance corresponding to these two high-power light-emitting diode modules were measured using a thermal infrared camera and a MicReD T3Ster. The experimental results show that the thermal performance of the compact light-emitting diode array using vapor chamber–based plate is much better than that using copper-based plate. The average temperatures of light-emitting diode copper- and vapor chamber–based plates are 100.5°C and 41.5°C at 100 W power input, respectively. In addition, the maximal temperature difference of the 100-W light-emitting diode array vapor chamber–based plate is 2.2°C far less than 31.7°C of copper-based plate. Furthermore, the measurement results show that the vapor chamber can prominently lower the spreading resistance, diminish the hot-spot effect, and increase durability.

  1. Tuning the white light spectrum of light emitting diode lamps to reduce attraction of nocturnal arthropods.

    Science.gov (United States)

    Longcore, Travis; Aldern, Hannah L; Eggers, John F; Flores, Steve; Franco, Lesly; Hirshfield-Yamanishi, Eric; Petrinec, Laina N; Yan, Wilson A; Barroso, André M

    2015-05-05

    Artificial lighting allows humans to be active at night, but has many unintended consequences, including interference with ecological processes, disruption of circadian rhythms and increased exposure to insect vectors of diseases. Although ultraviolet and blue light are usually most attractive to arthropods, degree of attraction varies among orders. With a focus on future indoor lighting applications, we manipulated the spectrum of white lamps to investigate the influence of spectral composition on number of arthropods attracted. We compared numbers of arthropods captured at three customizable light-emitting diode (LED) lamps (3510, 2704 and 2728 K), two commercial LED lamps (2700 K), two commercial compact fluorescent lamps (CFLs; 2700 K) and a control. We configured the three custom LEDs to minimize invertebrate attraction based on published attraction curves for honeybees and moths. Lamps were placed with pan traps at an urban and two rural study sites in Los Angeles, California. For all invertebrate orders combined, our custom LED configurations were less attractive than the commercial LED lamps or CFLs of similar colour temperatures. Thus, adjusting spectral composition of white light to minimize attracting nocturnal arthropods is feasible; not all lights with the same colour temperature are equally attractive to arthropods. © 2015 The Author(s) Published by the Royal Society. All rights reserved.

  2. Two stacked tandem white organic light-emitting diodes employing WO3 as a charge generation layer

    Science.gov (United States)

    Bin, Jong-Kwan; Lee, Na Yeon; Lee, SeungJae; Seo, Bomin; Yang, JoongHwan; Kim, Jinook; Yoon, Soo Young; Kang, InByeong

    2016-09-01

    Recently, many studies have been conducted to improve the electroluminescence (EL) performance of organic lightemitting diodes (OLEDs) by using appropriate organic or inorganic materials as charge generation layer (CGL) for their application such as full color displays, backlight units, and general lighting source. In a stacked tandem white organic light-emitting diodes (WOLEDs), a few emitting units are electrically interconnected by a CGL, which plays the role of generating charge carriers, and then facilitate the injection of it into adjacent emitting units. In the present study, twostacked WOLEDs were fabricated by using tungsten oxide (WO3) as inorganic charge generation layer and 1,4,5,8,9,11- hexaazatriphenylene hexacarbonitrile (HAT-CN) as organic charge generation layer (P-CGL). Organic P-CGL materials were used due to their ease of use in OLED fabrication as compared to their inorganic counterparts. To obtain high efficiency, we demonstrate two-stacked tandem WOLEDs as follows: ITO/HIL/HTL/HTL'/B-EML/ETL/N-CGL/P-CGL (WO3 or HAT-CN)/HTL″/YG-EML/ETL/LiF/Al. The tandem devices with blue- and yellow-green emitting layers were sensitive to the thickness of an adjacent layer, hole transporting layer for the YG emitting layer. The WOLEDs containing the WO3 as charge generation layer reach a higher power efficiency of 19.1 lm/W and the current efficiency of 51.2 cd/A with the white color coordinate of (0.316, 0.318) than the power efficiency of 13.9 lm/W, and the current efficiency of 43.7 cd/A for organic CGL, HAT-CN at 10 mA/cm2, respectively. This performance with inserting WO3 as CGL exhibited the highest performance with excellent CIE color coordinates in the two-stacked tandem OLEDs.

  3. High-performance perovskite light-emitting diodes via morphological control of perovskite films.

    Science.gov (United States)

    Yu, Jae Choul; Kim, Da Bin; Jung, Eui Dae; Lee, Bo Ram; Song, Myoung Hoon

    2016-04-07

    Solution-processable perovskite materials have garnered tremendous attention because of their excellent charge carrier mobility, possibility of a tunable optical bandgap, and high photoluminescence quantum efficiency (PLQE). In particular, the uniform morphology of a perovskite film is the most important factor in realizing perovskite light-emitting diodes (PeLEDs) with high efficiency and full-coverage electroluminescence (EL). In this study, we demonstrate highly efficient PeLEDs that contain a perovskite film with a uniform morphology by introducing HBr into the perovskite precursor. The introduction of HBr into the perovskite precursor results in a perovskite film with a uniform, continuous morphology because the HBr increases the solubility of the inorganic component in the perovskite precursor and reduces the crystallization rate of the perovskite film upon spin-coating. Moreover, PeLEDs fabricated using perovskite films with a uniform, continuous morphology, which were deposited using 6 vol% HBr in a dimethylformamide (DMF)/hydrobromic acid (HBr) cosolvent, exhibited full coverage of the green EL emission. Finally, the optimized PeLEDs fabricated with perovskite films deposited using the DMF/HBr cosolvent exhibited a maximum luminance of 3490 cd m(-2) (at 4.3 V) and a luminous efficiency of 0.43 cd A(-1) (at 4.3 V).

  4. Multicolor fluorescent light-emitting diodes based on cesium lead halide perovskite quantum dots

    Science.gov (United States)

    Wang, Peng; Bai, Xue; Sun, Chun; Zhang, Xiaoyu; Zhang, Tieqiang; Zhang, Yu

    2016-08-01

    High quantum yield, narrow full width at half-maximum and tunable emission color of perovskite quantum dots (QDs) make this kind of material good prospects for light-emitting diodes (LEDs). However, the relatively poor stability under high temperature and air condition limits the device performance. To overcome this issue, the liquid-type packaging structure in combination with blue LED chip was employed to fabricate the fluorescent perovskite quantum dot-based LEDs. A variety of monochromatic LEDs with green, yellow, reddish-orange, and red emission were fabricated by utilizing the inorganic cesium lead halide perovskite quantum dots as the color-conversion layer, which exhibited the narrow full width at half-maximum (<35 nm), the relatively high luminous efficiency (reaching 75.5 lm/W), and the relatively high external quantum efficiency (14.6%), making it the best-performing perovskite LEDs so far. Compared to the solid state LED device, the liquid-type LED devices exhibited excellent color stability against the various working currents. Furthermore, we demonstrated the potential prospects of all-inorganic perovskite QDs for the liquid-type warm white LEDs.

  5. Analysis on electrical characteristics of high-voltage GaN-based light-emitting diodes

    Institute of Scientific and Technical Information of China (English)

    Guo Wei-Ling; Yan Wei-Wei; Zhu Yan-Xu; Liu Jian-Peng; Ding Yan; Cui De-Sheng; Wu Guo-Qing

    2012-01-01

    In order to investigate their electrical characteristics,high-voltage light-emitting-diodes (HV-LEDs) each containing four cells in series are fabricated.The electrical parameters including varying voltage and parasitic effect are studied.It is shown that the ideality factors (IFs) of the HV-LEDs with different numbers of cells are 1.6,3.4,4.7,and 6.4.IF increases linearly with the number of cells increasing.Moreover,the performance of the HV-LED with failure cells is examined.The analysis indicates that the failure cell has a parallel resistance which induces the leakage of the failure cell.The series resistance of the failure cell is 76.8 Ω,while that of the normal cell is 21.3 Ω.The scanning electron microscope (SEM) image indicates that different metal layers do not contact well.It is hard to deposit the metal layers in the deep isolation trenches.The fabrication process of HV-LEDs needs to be optimized.

  6. Thermally cross-linkable hole transport polymers for solution-based organic light-emitting diodes.

    Science.gov (United States)

    Cha, Seung Ji; Cho, Se-Na; Lee, Woo-Hyung; Chung, Ha-Seul; Kang, In-Nam; Suh, Min Chul

    2014-04-01

    Two thermally cross-linkable hole transport polymers that contain phenoxazine and triphenylamine moieties, X-P1 and X-P2, are developed for use in solution-processed multi-stack organic light-emitting diodes (OLEDs). Both X-P1 and X-P2 exhibit satisfactory cross-linking and optoelectronic properties. The highest occupied molecular orbital (HOMO) levels of X-P1 and X-P2 are -5.24 and -5.16 eV, respectively. Solution-processed super yellow polymer devices (ITO/X-P1 or X-P2/PDY-132/LiF/Al) with X-P1 or X-P2 hole transport layers of various thicknesses are fabricated with the aim of optimizing the device characteristics. The fabricated multi-stack yellow devices containing the newly synthesized hole transport polymers exhibit satisfactory currents and power efficiencies. The optimized X-P2 device exhibits a device efficiency that is dramatically improved by more than 66% over that of a reference device without an HTL.

  7. Organic thin-film transistor arrays for active-matrix organic light emitting diode

    Science.gov (United States)

    Lee, Sangyun; Moon, Hyunsik; Kim, Do H.; Koo, Bon-Won; Jeong, Eun-Jeong; Lee, Bang-Lin; Kim, Joo-Young; Lee, Eunkyung; Hahn, Kook-Min; Han, Jeong-Seok; Park, Jung-Il; Seon, Jong-Baek; Kim, Jung-Woo; Chun, Young-Tea; Kim, Sangyeol; Kang, Sung K.

    2007-09-01

    We developed an active matrix organic light-emitting diodes (AMOLEDs) on a glass using two organic thin-film transistors (OTFTs) and a capacitor in a pixel. OTFTs switching-arrays with 64 scan lines and 64 (RGB) data lines were designed and fabricated to drive OLED arrays. In this study, OTFT devices have bottom contact structures with an ink-jet printed polymer semiconductor and an organic insulator as a gate dielectric. The width and length of the switching OTFT is 500μm and 10μm, respectively and the driving OTFT has 900μm channel width with the same channel length. The characteristics of the OTFTs were examined using test cells around display area. On/off ratio, mobility, on-current of switching OTFT and on-current of driving OTFT were 10 6, 0.1 cm2/V-sec, order of 8μA and over 70 μA respectively. These properties were enough to drive the AMOLEDs over 60 Hz frame rate. AMOLEDs composed of the OTFT switching arrays and OLEDs made by deposition of small molecule materials were fabricated and driven to make moving images, successfully.

  8. New Framework of Sustainable Indicators for Outdoor LED (Light Emitting Diodes Lighting and SSL (Solid State Lighting

    Directory of Open Access Journals (Sweden)

    Annika K. Jägerbrand

    2015-01-01

    Full Text Available Light emitting diodes (LEDs and SSL (solid state lighting are relatively new light sources, but are already widely applied for outdoor lighting. Despite this, there is little available information allowing planners and designers to evaluate and weigh different sustainability aspects of LED/SSL lighting when making decisions. Based on a literature review, this paper proposes a framework of sustainability indicators and/or measures that can be used for a general evaluation or to highlight certain objectives or aspects of special interest when choosing LED/SSL lighting. LED/SSL lighting is reviewed from a conventional sustainable development perspective, i.e., covering the three dimensions, including ecological, economic and social sustainability. The new framework of sustainable indicators allow prioritization when choosing LED/SSL products and can thereby help ensure that short-term decisions on LED/SSL lighting systems are in line with long-term sustainability goals established in society. The new framework can also be a beneficial tool for planners, decision-makers, developers and lighting designers, or for consumers wishing to use LED/SSL lighting in a sustainable manner. Moreover, since some aspects of LED/SSL lighting have not yet been thoroughly studied or developed, some possible future indicators are suggested.

  9. Optical Experiments Using Mini-Torches with Red, Green and Blue Light Emitting Diodes

    Science.gov (United States)

    Kamata, Masahiro; Matsunaga, Ai

    2007-01-01

    We have developed two kinds of optical experiments: color mixture and fluorescence, using mini-torches with light emitting diodes (LEDs) that emit three primary colors. Since the tools used in the experiments are simple and inexpensive, students can easily retry and develop the experiments by themselves. As well as giving an introduction to basic…

  10. Optical Experiments Using Mini-Torches with Red, Green and Blue Light Emitting Diodes

    Science.gov (United States)

    Kamata, Masahiro; Matsunaga, Ai

    2007-01-01

    We have developed two kinds of optical experiments: color mixture and fluorescence, using mini-torches with light emitting diodes (LEDs) that emit three primary colors. Since the tools used in the experiments are simple and inexpensive, students can easily retry and develop the experiments by themselves. As well as giving an introduction to basic…

  11. OLED Fundamentals: Materials, Devices, and Processing of Organic Light-Emitting Diodes

    Energy Technology Data Exchange (ETDEWEB)

    Blochwitz-Nimoth, Jan; Bhandari, Abhinav; Boesch, Damien; Fincher, Curtis R.; Gaspar, Daniel J.; Gotthold, David W.; Greiner, Mark T.; Kido, Junji; Kondakov, Denis; Korotkov, Roman; Krylova, Valentina A.; Loeser, Falk; Lu, Min-Hao; Lu, Zheng-Hong; Lussem, Bjorn; Moro, Lorenza; Padmaperuma, Asanga B.; Polikarpov, Evgueni; Rostovtsev, Vsevolod V.; Sasabe, Hisahiro; Silverman, Gary; Thompson, Mark E.; Tietze, Max; Tyan, Yuan-Sheng; Weaver, Michael; Xin , Xu; Zeng, Xianghui

    2015-05-26

    What is an organic light emitting diode (OLED)? Why should we care? What are they made of? How are they made? What are the challenges in seeing these devices enter the marketplace in various applications? These are the questions we hope to answer in this book, at a level suitable for knowledgeable non-experts, graduate students and scientists and engineers working in the field who want to understand the broader context of their work. At the most basic level, an OLED is a promising new technology composed of some organic material sandwiched between two electrodes. When current is passed through the device, light is emitted. The stack of layers can be very thin and has many variations, including flexible and/or transparent. The organic material can be polymeric or composed small molecules, and may include inorganic components. The electrodes may consist of metals, metal oxides, carbon nanomaterials, or other species, though of course for light to be emitted, one electrode must be transparent. OLEDs may be fabricated on glass, metal foils, or polymer sheets (though polymeric substrates must be modified to protect the organic material from moisture or oxygen). In any event, the organic material must be protected from moisture during storage and operation. A control circuit, the exact nature of which depends on the application, drives the OLED. Nevertheless, the control circuit should have very stable current control to generate uniform light emission. OLEDs can be designed to emit a single color of light, white light, or even tunable colors. The devices can be switched on and off very rapidly, which makes them suitable for displays or for general lighting. Given the amazing complexity of the technical and design challenges for practical OLED applications, it is not surprising that applications are still somewhat limited. Although organic electroluminescence is more than 50 years old, the modern OLED field is really only about half that age – with the first high

  12. A luminescent Eu(III) complex based on 2-(4', 4', 4'-trifluoro-1', 3'-dioxobutyl)-dibenzothiophene for light-emitting diodes

    Science.gov (United States)

    Liu, Sheng-Gui; Gong, Meng-Lian; Wang, Sheng; Tan, Xiu-Mei

    2009-10-01

    Complex Eu(dbt) 3(phen) (Hdbt = 2-(4', 4', 4'-trifluoro-1', 3'-dioxobutyl)-dibenzothiophene, phen = 1,10-phenanthroline) was synthesized. The complex emits red luminescence, characteristic of the 5D0 → 7FJ ( J = 0-4) emission bands of Eu 3+ under near ultraviolet. A red conversion light-emitting diode (LED) device was fabricated by coating complex onto InGaN-based-LED chip that emits 395 nm ultraviolet light. When the mass ratio of the red phosphor to the silicone is 1:25, the LED device's CIE chromaticity coordinates are x = 0.5835, y = 0.2857, and the luminescence efficiency is 1.29 lm/w. All the results show that this europium complex may act as a red component in fabrication of white LEDs with high color-rendering index.

  13. The Use of Light-Emitting Diodes (LEDs) as Green and Red/Far-Red Light Sources in Plant Physiology.

    Science.gov (United States)

    Jackson, David L.; And Others

    1985-01-01

    The use of green, red, and far-red light-emitting diodes (LEDs) as light sources for plant physiological studies is outlined and evaluated. Indicates that LED lamps have the advantage over conventional light sources in that they are lightweight, low-cost, portable, easily constructed, and do not require color filters. (Author/DH)

  14. Efficient distributed control of light-emitting diode array lighting systems.

    Science.gov (United States)

    Dong, Jianfei; Pandharipande, Ashish

    2012-07-15

    We consider illumination rendering with distributed control of a lighting system with an array of light-emitting diodes (LEDs). As low-cost microprocessors become standard components in LED drivers, distributing the computation of the control signals to individual LED drivers becomes attractive. Common distributed control algorithms require each individual controller to exchange information with all the others and process it. This incurs too large a communication and processing overhead for a low-cost local controller. In this Letter, we propose a distributed control algorithm for achieving global illumination rendering, wherein a controller only needs to communicate within a selected neighborhood. We present design criteria for defining the communication neighborhood and study its impact on rendering performance.

  15. Light-emitting diode spherical packages: an equation for the light transmission efficiency

    CERN Document Server

    Moreno, Ivan; Avendano-Alejo, Maximino; 10.1364/AO.49.000012

    2011-01-01

    Virtually all light-emitting diodes (LEDs) are encapsulated with a transparent epoxy or silicone-gel. In this paper we analyze the optical efficiency of spherical encapsulants. We develop a quasi-radiometric equation for the light transmission efficiency, which incorporates some ideas of Monte-Carlo ray tracing into the context of radiometry. The approach includes the extended source nature of the LED chip, and the chip radiance distribution. The equation is an explicit function of the size and the refractive index of the package, and also of several chip parameters such as shape, size, radiance, and location inside the package. To illustrate the use of this equation, we analyze several packaging configurations of practical interest; for example, a hemispherical dome with multiple chips, a flat encapsulation as a special case of the spherical package, and approximate calculations of an encapsulant with a photonic crystal LED or with a photonic quasi crystal LED. These calculations are compared with Monte-Carl...

  16. An Optically Stabilized Fast-Switching Light Emitting Diode as a Light Source for Functional Neuroimaging

    Science.gov (United States)

    Wagenaar, Daniel A.

    2012-01-01

    Neuroscience research increasingly relies on optical methods for evoking neuronal activity as well as for measuring it, making bright and stable light sources critical building blocks of modern experimental setups. This paper presents a method to control the brightness of a high-power light emitting diode (LED) light source to an unprecedented level of stability. By continuously monitoring the actual light output of the LED with a photodiode and feeding the result back to the LED's driver by way of a proportional-integral controller, drift was reduced to as little as 0.007% per hour over a 12-h period, and short-term fluctuations to 0.005% root-mean-square over 10 seconds. The LED can be switched on and off completely within 100 s, a feature that is crucial when visual stimuli and light for optical recording need to be interleaved to obtain artifact-free recordings. The utility of the system is demonstrated by recording visual responses in the central nervous system of the medicinal leech Hirudo verbana using voltage-sensitive dyes. PMID:22238663

  17. An optically stabilized fast-switching light emitting diode as a light source for functional neuroimaging.

    Directory of Open Access Journals (Sweden)

    Daniel A Wagenaar

    Full Text Available Neuroscience research increasingly relies on optical methods for evoking neuronal activity as well as for measuring it, making bright and stable light sources critical building blocks of modern experimental setups. This paper presents a method to control the brightness of a high-power light emitting diode (LED light source to an unprecedented level of stability. By continuously monitoring the actual light output of the LED with a photodiode and feeding the result back to the LED's driver by way of a proportional-integral controller, drift was reduced to as little as 0.007% per hour over a 12-h period, and short-term fluctuations to 0.005% root-mean-square over 10 seconds. The LED can be switched on and off completely within 100 μs, a feature that is crucial when visual stimuli and light for optical recording need to be interleaved to obtain artifact-free recordings. The utility of the system is demonstrated by recording visual responses in the central nervous system of the medicinal leech Hirudo verbana using voltage-sensitive dyes.

  18. Laser-induced forward transfer of polymer light-emitting diode pixels with increased charge injection.

    Science.gov (United States)

    Shaw-Stewart, James; Lippert, Thomas; Nagel, Matthias; Nüesch, Frank; Wokaun, Alexander

    2011-02-01

    Laser-induced forward transfer (LIFT) has been used to print 0.6 mm × 0.5 mm polymer light-emitting diode (PLED) pixels with poly[2-methoxy, 5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV) as the light-emitting polymer. The donor substrate used in the LIFT process is covered by a sacrificial triazene polymer (TP) release layer on top of which the aluminium cathode and functional MEH-PPV layers are deposited. To enhance electron injection into the MEH-PPV layer, a thin poly(ethylene oxide) (PEO) layer on the Al cathode or a blend of MEH-PPV and PEO was used. These donor substrates have been transferred onto both plain indium tin oxide (ITO) and bilayer ITO/PEDOT:PSS (poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) blend) receiver substrates to create the PLED pixels. For comparison, devices were fabricated in a conventional manner on ITO substrates coated with a PEDOT:PSS hole-transporting layer. Compared to multilayer devices without PEO, devices with ITO/PEDOT:PSS/MEH-PPV:PEO blend/Al architecture show a 100 fold increase of luminous efficiency (LE) reaching a maximum of 0.45 cd/A for the blend at a brightness of 400 cd/m(2). A similar increase is obtained for the polymer light-emitting diode (PLED) pixels deposited by the LIFT process, although the maximum luminous efficiency only reaches 0.05 cd/A for MEH-PPV:PEO blend, which we have attributed to the fact that LIFT transfer was carried out in an ambient atmosphere. For all devices, we confirm a strong increase in device performance and stability when using a PEDOT:PSS film on the ITO anode. For PLEDs produced by LIFT, we show that a 25 nm thick PEDOT:PSS layer on the ITO receiver substrate considerably reduces the laser fluence required for pixel transfer from 250 mJ/cm(2) without the layer to only 80 mJ/cm(2) with the layer.

  19. Improved light extraction efficiency of InGaN/GaN light-emitting diodes using dielectric coated nanopillars

    DEFF Research Database (Denmark)

    Fadil, Ahmed; Ou, Yiyu; Ou, Haiyan

    Nanopillars have been fabricated on InGaN/GaN ligh t-emitting diodes using nanosphere lithography. With HCl treatment and SiN passivation a photoluminescence improvement by a factor of 7.8 was obtained compared to the untreated nanopillar structure.......Nanopillars have been fabricated on InGaN/GaN ligh t-emitting diodes using nanosphere lithography. With HCl treatment and SiN passivation a photoluminescence improvement by a factor of 7.8 was obtained compared to the untreated nanopillar structure....

  20. Wirelessly powered ultraviolet light emitting diodes for photocatalytic oxidation

    NARCIS (Netherlands)

    Kuipers, J.; Bruning, H.; Yntema, D.R.; Rijnaarts, H.H.M.

    2015-01-01

    A method is presented to distribute small scale light sources in a photocatalytic slurry reactor. The goal of distributing the light sources is to increase photon transfer efficiency, and thereby increasing the reaction rate, compared to using one single light source. The light sources used in this

  1. Wirelessly powered ultraviolet light emitting diodes for photocatalytic oxidation

    NARCIS (Netherlands)

    Kuipers, J.; Bruning, H.; Yntema, D.R.; Rijnaarts, H.H.M.

    2015-01-01

    A method is presented to distribute small scale light sources in a photocatalytic slurry reactor. The goal of distributing the light sources is to increase photon transfer efficiency, and thereby increasing the reaction rate, compared to using one single light source. The light sources used in this

  2. Improving Light Outcoupling Efficiency for OLEDs with Microlens Array Fabricated on Transparent Substrate

    Directory of Open Access Journals (Sweden)

    Jun Wang

    2014-01-01

    Full Text Available Low light outcoupling efficiency restricts the wide application of organic light-emitting diodes in solid state light market although the internal quantum efficiency of the device could reach near to 100%. In order to improve the output efficiency, different kinds of microlens array on the substrate emission surface were designed and simulated using light tracing method. Simulation results indicate that the microlens array on the substrate could efficiently improve the light output efficiency and an enhancement of 1.8 could be obtained with optimized microlens structure design. The microlens array with semicircle shape using polymer material was fabricated on glass substrate by a facile approach. Finally, the organic device with microlens array substrate was manufactured and the light output of the device with surface microlens structure could increase to 1.64 times comparing with the device without microlens.

  3. High-flux focusable color-tunable and efficient white-light-emitting diode light engine for stage lighting

    Science.gov (United States)

    Chakrabarti, Maumita; Pedersen, Henrik Chresten; Petersen, Paul Michael; Poulsen, Christian; Poulsen, Peter Behrensdorff; Dam-Hansen, Carsten

    2016-08-01

    A color mixing light-emitting diode (LED) light engine that can replace 2-kW halogen-Fresnel spotlight with high-luminous flux in excess of 20,000 lm is reported for applications in professional stage and studio lighting. The light engine focuses and mixes the light from 210 LEDs of five different colors through a microlens array (MA) at the gate of Ø50 mm. Hence, it produces homogeneous color-mixed tunable white light from 3000 to 6000 K that can be adjustable from flood to spot position providing 10% translational loss, whereas the corresponding loss from the halogen-Fresnel spotlight is 37%. The design, simulation, and optimization of the light engine is described and compared to the experimental characterization of a prototype. The light engine is optimized through the simulated design of reflector, total internal reflection lens, and MA, as well as the number of LEDs. An optical efficiency of 59% and a luminous efficacy of 33 lm/W are achieved, which is three times higher than the 2-kW halogen-Fresnel spotlight. In addition to having color rendering of color rendering index Ra>85 and television lighting consistency index 12>70, the dimmable and tunable white light can be color controlled during the operational time.

  4. A Device Model for Polymer Light-Emitting Diodes with Mobile Ions

    NARCIS (Netherlands)

    Jong, M.J.M. de; Blom, P.W.M.

    1996-01-01

    A model is presented for the device operation of a polymer light-emitting diode (PLED) with mobile ions. It is calculated that the low efficiency of a PLED with a high injection barrier increases as the ions migrate.

  5. White Organic Light-emitting Diodes with A Sr2 SiO4:Eu3+ Color Conversion Layer%White Organic Light-emitting Diodes with A Sr2SiO4:Eu3+ Color Conversion Layer

    Institute of Scientific and Technical Information of China (English)

    Meiso Yokoyama

    2013-01-01

    Hybrid inorganic/organic white organic light emitting diodes (hybrid-WOLEDs) are fabricated by combining the blue phosphorescent organic light emitting diodes (PHOLEDs) with red Sr2 SiO4∶ Eu3+ phosphor spin coated as a color conversion layer (CCL) over the other side of glass substrate on the devices.The basic configuration of the PHOLEDs consists a host material,N,N'-dicarbazolyl-3,5-benzene (mCP) which doped with a blue phosphorescent iridium complexes iridium (Ⅲ)bis [(4,6-di-fluorophenyl)-pyridinato-N-C2'] (FIrpic) to produce high efficient blue organic light emitting diodes.The hybrid-WOLED shows maximum luminous efficiency of 22.1 cd/ A,maximum power efficiency of 11.26 lm/W,external quantum efficiency of 10.2% and CIE coordinates of (0.32,0.34).Moreover,the output spectra and CIE coordinates of the hybrid-WOLED have a small shift in different driving current density,which demonstrate good color stability.

  6. Low Temperature DC Sputtering Deposition on Indium-Tin Oxide Film and Its Application to Inverted Top-emitting Organic Light-emitting Diodes

    Institute of Scientific and Technical Information of China (English)

    Hui LIN; Junsheng YU; Shuangling LOU; Jun WANG; Yadong JIANG

    2008-01-01

    Indium tin oxide (ITO) ultrathin films were prepared on glass substrate by DC (direct current) magnetron sputtering technique with the assistance of H2O vapor to avoid potential surface damage. The film properties were characterized by X-ray diffraction (XRD) technique, four-point probe method and spectrophotometer. The results show that the deposited ITO film with introduced H20 during sputtering process was almost amor- phous. The average visible light transmission of 100 nm ITO film was around 85% and square resistivity was below 80 Ω/square. The film was used as the transparent anode to fabricate an inverted top-emitting organic light-emitting diodes (IT-OLEDs) with the structure of glass substrate/AIq3 (40 nm)/NPB (15 nm)/CuPc(x nm)/ITO anode (100 nm), where the film thickness of CuPc was optimized. It was found that the lumi-nance of this IT-OLEDs was improved from 25 cd/m2 to more than 527 cd/m2 by increasing the thickness of CuPc, and luminance efficiency of 0.24 lm/W at 100 cd/m2 was obtained, which indicated that the optimized thickness of CuPc layer was around 15 nm.

  7. Electrophoretic deposition of fluorescent Cu and Au sheets for light-emitting diodes

    Science.gov (United States)

    Liu, Jiale; Wu, Zhennan; Li, Tingting; Zhou, Ding; Zhang, Kai; Sheng, Yu; Cui, Jianli; Zhang, Hao; Yang, Bai

    2015-12-01

    Electrophoretic deposition (EPD) is a conventional method for fabricating film materials from nanometer-sized building blocks, and exhibits the advantages of low-cost, high-efficiency, wide-range thickness adjustment, and uniform deposition. Inspired by the interest in the application of two-dimensional (2D) nanomaterials, the EPD technique has been recently extended to building blocks with 2D features. However, the studies are mainly focused on simplex building blocks. The utilization of multiplex building blocks is rarely reported. In this work, we demonstrate a controlled EPD of Cu and Au sheets, which are 2D assemblies of luminescent Cu and Au nanoclusters. Systematic investigations reveal that both the deposition efficiency and the thickness are determined by the lateral size of the sheets. For Cu sheets with a large lateral size, a high ζ-potential and strong face-to-face van der Waals interactions facilitate the deposition with high efficiency. However, for Au sheets, the small lateral size and ζ-potential limit the formation of a thick film. To solve this problem, the deposition dynamics are controlled by increasing the concentration of the Au sheets and adding acetone. This understanding permits the fabrication of a binary EPD film by the stepwise deposition of Cu and Au sheets, thus producing a luminescent film with both Cu green emission and Au red emission. A white light-emitting diode prototype with color coordinates (x, y) = (0.31, 0.36) is fabricated by employing the EPD film as a color conversion layer on a 365 nm GaN clip and further tuning the amount of deposited Cu and Au sheets.Electrophoretic deposition (EPD) is a conventional method for fabricating film materials from nanometer-sized building blocks, and exhibits the advantages of low-cost, high-efficiency, wide-range thickness adjustment, and uniform deposition. Inspired by the interest in the application of two-dimensional (2D) nanomaterials, the EPD technique has been recently extended to

  8. Mn2- x Y x (MoO4)3 Phosphor Excited by UV GaN-Based Light-Emitting Diode for White Emission

    Science.gov (United States)

    Chen, Lung-Chien; Tseng, Zong-Liang; Hsu, Ting-Chun; Yang, Shengyi; Chen, Yuan-Bin

    2017-04-01

    One option for low-cost white light-emitting diodes (LEDs) is the combination of a near-ultraviolet (UV) LED chip (382 nm) and a single phosphor. Such Mn2- x Y x (MoO4)3 single phosphors have been fabricated by a simple solid-state reaction route and their emission color tuned by controlling the Mn doping amount. The chromaticity coordinates of the white light emitted by the UV GaN LED with the MnY(MoO4)3 phosphor were x = 0.5204 and y = 0.4050 [correlated color temperature (CCT) = 7958 K].

  9. SPEAKING IN LIGHT - Jupiter radio signals as deflections of light-emitting electron beams in a vacuum chamber

    Science.gov (United States)

    Petrovic, K.

    2015-10-01

    Light emitting electron beam generated in a vacuum chamber is used as a medium for visualizing Jupiter's electromagnetic radiation. Dual dipole array antenna is receiving HF radio signals that are next amplified to radiate a strong electromagnetic field capable of influencing the propagation of electron beam in plasma. Installation aims to provide a platform for observing the characteristics of light emitting beam in 3D, as opposed to the experiments with cathode ray tubes in 2-dimensional television screens. Gas giant 'speaking' to us by radio waves bends the light in the tube, allowing us to see and hear the messages of Jupiter - God of light and sky.

  10. Top Hat HELLISH (Hot electron light emitting and lasing in heterostructures)

    CERN Document Server

    Wah, J Y

    2003-01-01

    Hot electron light emitting and lasing in semiconductor heterostructures (HELLISH) is a longitudinal transport structure comprising of a GaAs Quantum Well within an Al sub x Ga sub 1 sub - sub x As pn junction. The light emission from the HELLISH device was previously believed to be merely due to hot electron effects. In the current work, we showed, however, that the device can be operated even at low applied electric fields where the hot electron effects are essentially negligible. Thus, a novel model for operation with the new concept of 'quasi-flatband condition' is introduced. In order to investigate new functionalities of the HELLISH devices, a new structure with longer p-channel, nicknamed Top Hat HELLISH (THH), is also fabricated and demonstrated. In terms of the energy band profile, the HELLISH device has a monotonic build-in potential barrier along the heterojunction. The operation is through tilting the bands and hence allowing carrier diffusion into the active region under the quasi-flatband condit...

  11. Waveguide-integrated microdisk light-emitting diode and photodetector based on Ge quantum dots.

    Science.gov (United States)

    Xu, Xuejun; Maruizumi, Takuya; Shiraki, Yasuhiro

    2014-02-24

    Microdisk integrated with a bus waveguide is fabricated on silicon-on-insulator substrate containing Ge self-assembled quantum dots as active medium. The device is demonstrated to be operated as both light-emitting diode and photodetector. At forward bias, carriers are injected into the microdisk and light emission at 1.45-1.6 μm is extracted through the waveguide via microdisk-waveguide coupling. Sharp resonant peaks with Q-factor as high as 1350 are obtained in the electroluminescence spectra, corresponding to whispering gallery modes of the microdisk. At reverse bias, the device functions as a resonant cavity enhanced photodetector with wavelength-selective photo-response. The photo-current at resonant wavelength of 1533.65 nm is 50 times larger than that at non-resonant wavelength. The dark current density of the photodetector is as low as 0.29 mA/cm2 up to -10 V bias and the peak responsivity is 5.645 mA/W.

  12. Polymer nanofibers as novel light-emitting sources and lasing material

    Science.gov (United States)

    Camposeo, A.; Persano, L.; Pisignano, D.

    2013-09-01

    Polymer micro- and nano-fibers, made of organic light-emitting materials with optical gain, show interesting lasing properties. Fibers with diameters from few tens of nm to few microns can be fabricated by electrospinning, a method based on electrostatic fields applied to a polymer solution. The morphology and emission properties of these fibers, composed of optically inert polymers embedding laser dyes, are characterized by scanning electron and fluorescence microscopy, and lasing is observed under optical pumping for fluences of the order of 102 μJ cm-2. In addition, lightemitting fibers can be electrospun by conjugated polymers, their blends, and other active organics, and can be exploited in a range of photonic and electronic devices. In particular, waveguiding of light is observed and characterized, showing optical loss coefficient in the range of 102-103 cm-1. The reduced size of these novel laser systems, combined with the possibility of achieving wavelength tunability through transistor or other electrode-based architectures embedding nonlinear molecular layers, and with their peculiar mechanical robustness, open interesting perspectives for realizing miniaturized laser sources to integrate on-chip optical sensors and photonic circuits.

  13. Bacterial cellulose membrane as flexible substrate for organic light emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Legnani, C.; Vilani, C. [CeDO-Organic Device Center, Dimat-Dimat, Inmetro, Duque de Caxias, RJ (Brazil); Calil, V.L. [CeDO-Organic Device Center, Dimat-Dimat, Inmetro, Duque de Caxias, RJ (Brazil); LOEM-Molecular Optoelectronic Laboratory-Physics Department-PUC-Rio, Rio de Janeiro, RJ (Brazil); Barud, H.S. [Institute of Chemistry, Sao Paulo State University-UNESP, CP 355 Araraquara, SP (Brazil); Quirino, W.G. [CeDO-Organic Device Center, Dimat-Dimat, Inmetro, Duque de Caxias, RJ (Brazil); Achete, C.A. [CeDO-Organic Device Center, Dimat-Dimat, Inmetro, Duque de Caxias, RJ (Brazil); COPPE-Programa de Engenharia Metalurgica e de Materiais, UFRJ, Rio de Janeiro, RJ (Brazil); Ribeiro, S.J.L. [Institute of Chemistry, Sao Paulo State University-UNESP, CP 355 Araraquara, SP (Brazil); Cremona, M. [CeDO-Organic Device Center, Dimat-Dimat, Inmetro, Duque de Caxias, RJ (Brazil); LOEM-Molecular Optoelectronic Laboratory-Physics Department-PUC-Rio, Rio de Janeiro, RJ (Brazil)], E-mail: cremona@fis.puc-rio.br

    2008-12-01

    Bacterial cellulose (BC) membranes produced by gram-negative, acetic acid bacteria (Gluconacetobacter xylinus), were used as flexible substrates for the fabrication of Organic Light Emitting Diodes (OLED). In order to achieve the necessary conductive properties indium tin oxide (ITO) thin films were deposited onto the membrane at room temperature using radio frequency (r.f.) magnetron sputtering with an r.f. power of 30 W, at pressure of 8 mPa in Ar atmosphere without any subsequent thermal treatment. Visible light transmittance of about 40% was observed. Resistivity, mobility and carrier concentration of deposited ITO films were 4.90 x 10{sup -4} Ohm cm, 8.08 cm{sup 2}/V-s and - 1.5 x 10{sup 21} cm{sup -3}, respectively, comparable with commercial ITO substrates. In order to demonstrate the feasibility of devices based on BC membranes three OLEDs with different substrates were produced: a reference one with commercial ITO on glass, a second one with a SiO{sub 2} thin film interlayer between the BC membrane and the ITO layer and a third one just with ITO deposited directly on the BC membrane. The observed OLED luminance ratio was: 1; 0.5; 0.25 respectively, with 2400 cd/m{sup 2} as the value for the reference OLED. These preliminary results show clearly that the functionalized biopolymer, biodegradable, biocompatible bacterial cellulose membranes can be successfully used as substrate in flexible organic optoelectronic devices.

  14. Recent advances in the science and engineering of organic light-emitting diodes (Conference Presentation)

    Science.gov (United States)

    Kippelen, Bernard; Gaj, Michael P.; Zhang, Xiaoqing; Choi, Sangmoo; Fuentes-Hernandez, Canek; Zhang, Yadong; Barlow, Stephen; Marder, Seth R.; Voit, Walter E.; Wei, Andrew

    2016-09-01

    In this talk, we will discuss recent advances in the science and engineering of organic light-emitting diodes (OLEDs). First, we will focus on materials in which light emission involves the process of thermally activated delayed fluorescence (TADF). In these materials, triplet excited states can convert into optically emissive singlet excited states by reverse intersystem crossing, allowing for nearly 100% internal quantum efficiency. This process can be used to design a new class of materials that are all organic, offering a lower cost alternative to conventional electrophosphorescent materials that contain heavy and expensive elements such as Pt and Ir. We will discuss molecular design strategies and present examples of materials that can be used as emitters or hosts in the emissive layer. In a second part of this talk, we will review recent progress in fabricating OLEDs on shape memory polymer substrates (SMPs). SMPs are mechanically active, smart materials that can exhibit a significant drop in modulus once an external stimulus such as temperature is applied. In their rubbery state upon heating, the SMP can be easily deformed by external stresses into a temporary geometric configuration that can be retained even after the stress is removed by cooling the SMP to below the glass transition temperature. Reheating the SMP causes strain relaxation within the polymer network and induces recovery of its original shape. We will discuss how these unique mechanical properties can also be extended to a new class of OLEDs.

  15. Separated Carbon Nanotube Macroelectronics for Active Matrix Organic Light-Emitting Diode Displays

    Science.gov (United States)

    Fu, Yue; Zhang, Jialu; Wang, Chuan; Chen, Pochiang; Zhou, Chongwu

    2012-02-01

    Active matrix organic light-emitting diode (AMOLED) display holds great potential for the next generation visual technologies due to its high light efficiency, flexibility, lightweight, and low-temperature processing. However, suitable thin-film transistors (TFTs) are required to realize the advantages of AMOLED. Pre-separated, semiconducting enriched carbon nanotubes are excellent candidates for this purpose because of their excellent mobility, high percentage of semiconducting nanotubes, and room-temperature processing compatibility. Here we report, for the first time, the demonstration of AMOLED displays driven by separated nanotube thin-film transistors (SN-TFTs) including key technology components such as large-scale high-yield fabrication of devices with superior performance, carbon nanotube film density optimization, bilayer gate dielectric for improved substrate adhesion to the deposited nanotube film, and the demonstration of monolithically integrated AMOLED display elements with 500 pixels driven by 1000 SN-TFTs. Our approach can serve as the critical foundation for future nanotube-based thin-film display electronics.

  16. Blue and green organic light-emitting devices with various film thicknesses for color tuning

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Blue and green organic light-emitting devices with a structure of indium tin oxide (ITO)/N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1 '-biphenyl-4,4'-diamine (NPB)/aluminum(Ⅲ) bis(2-methyl-8-quinolinato)4 -phenylphenolato (BAlq)/tris(8-hydroxyquinolate)-aluminum (Alq3)/Mg:Ag have been fabricated. Blue to green light emission has been achieved with the change of organic film thickness. Based on energy band diagram and charge carrier tunneling theory, it is concluded that the films of different thicknesses play a role as a color-tuning layer and the color-variable electroluminescence (EL) is ascribed to the modulation function within the charge carrier recombination zone. In the case of heterostructure devices with high performance, the observed EL spectra varies significantly with the thickness of organic films, which is resulted from the shift of recombination region site. It has not been hitherto indicated that the devices compose of identical components could be implemented to realize different color emission by changing the film thickness of functional layers.

  17. GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate.

    Science.gov (United States)

    Chuang, Linus C; Sedgwick, Forrest G; Chen, Roger; Ko, Wai Son; Moewe, Michael; Ng, Kar Wei; Tran, Thai-Truong D; Chang-Hasnain, Connie

    2011-02-09

    Monolithic integration of III-V compound semiconductor devices with silicon CMOS integrated circuits has been hindered by large lattice mismatches and incompatible processing due to high III-V epitaxy temperatures. We report the first GaAs-based avalanche photodiodes (APDs) and light emitting diodes, directly grown on silicon at a very low, CMOS-compatible temperature and fabricated using conventional microfabrication techniques. The APDs exhibit an extraordinarily large multiplication factor at low voltage resulting from the unique needle shape and growth mode.

  18. Light-emitting diode based on mask- and catalyst-free grown N-polar GaN nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Kunert, G; Freund, W; Aschenbrenner, T; Kruse, C; Figge, S; Hommel, D [Institute of Solid State Physics-Semiconductor Epitaxy-University of Bremen, Otto-Hahn-Allee NW1, 28359 Bremen (Germany); Schowalter, M; Rosenauer, A [Institute of Solid State Physics-Electron Microscopy-University of Bremen, Otto-Hahn-Allee NW1, 28359 Bremen (Germany); Kalden, J; Sebald, K; Gutowski, J [Institute of Solid State Physics-Semiconductor Optics-University of Bremen, Otto-Hahn-Allee NW1, 28359 Bremen (Germany); Feneberg, M; Tischer, I; Fujan, K; Thonke, K, E-mail: kunert@ifp.uni-bremen.de [Institute of Quantum Matter-Semiconductor Physics-University of Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany)

    2011-07-01

    We report on the fabrication of a light-emitting diode based on GaN nanorods containing InGaN quantum wells. The unique system consists of tilted N-polar nanorods of high crystalline quality. Photoluminescence, electroluminescence, and spatially resolved cathodoluminescence investigations consistently show quantum well emission around 2.6 eV. Scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy measurements reveal a truncated shape of the quantum wells with In contents of (15 {+-} 5)%.

  19. Solution-Processed Organic Thin-Film Transistor Array for Active-Matrix Organic Light-Emitting Diode

    Science.gov (United States)

    Harada, Chihiro; Hata, Takuya; Chuman, Takashi; Ishizuka, Shinichi; Yoshizawa, Atsushi

    2013-05-01

    We developed a 3-in. organic thin-film transistor (OTFT) array with an ink-jetted organic semiconductor. All layers except electrodes were fabricated by solution processes. The OTFT performed well without hysteresis, and the field-effect mobility in the saturation region was 0.45 cm2 V-1 s-1, the threshold voltage was 3.3 V, and the on/off current ratio was more than 106. We demonstrated a 3-in. active-matrix organic light-emitting diode (AMOLED) display driven by the OTFT array. The display could provide clear moving images. The peak luminance of the display was 170 cd/m2.

  20. Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (2021) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Sawicka, M.; Grzanka, S.; Skierbiszewski, C. [Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw (Poland); TopGaN Sp. z o.o., Sokolowska 29/37, 01-142 Warsaw (Poland); Cheze, C. [TopGaN Sp. z o.o., Sokolowska 29/37, 01-142 Warsaw (Poland); Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Turski, H.; Muziol, G.; Krysko, M.; Grzanka, E.; Sochacki, T. [Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw (Poland); Hauswald, C.; Brandt, O. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Siekacz, M. [Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw (Poland); Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Kucharski, R. [Ammono S.A., Czerwonego Krzyza 2/31, 00-377 Warsaw (Poland); Remmele, T.; Albrecht, M. [Leibniz Institute for Crystal Growth, Max-Born Strasse 2, Berlin 12489 (Germany)

    2013-03-18

    Multi-quantum well (MQW) structures and light emitting diodes (LEDs) were grown on semipolar (2021) and polar (0001) GaN substrates by plasma-assisted molecular beam epitaxy. The In incorporation efficiency was found to be significantly lower for the semipolar plane as compared to the polar one. The semipolar MQWs exhibit a smooth surface morphology, abrupt interfaces, and a high photoluminescence intensity. The electroluminescence of semipolar (2021) and polar (0001) LEDs fabricated in the same growth run peaks at 387 and 462 nm, respectively. Semipolar LEDs with additional (Al,Ga)N cladding layers exhibit a higher optical output power but simultaneously a higher turn-on voltage.