WorldWideScience

Sample records for external-cavity mode-locked semiconductor

  1. Pulse properties of external cavity mode locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Kroh, Marcel; Mørk, Jesper

    2006-01-01

    The performance of an external-cavity mode-locked semiconductor laser is investigated both theoretically and experimentally. The optimization analysis focuses on the regimes of stable mode locking and the generation of sub-picosecond optical pulses. We demonstrate stable output pulses down to one...... picosecond duration with more than 30 dB trailing pulse suppression. The limiting factors to the device performance are investigated on the basis of a fully-distributed time-domain model.We find that ultrafast gain dynamics effectively reduce the pulse-shaping strength and inhibit the generation...

  2. Numerical investigations on the performance of external-cavity mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mørk, Jesper

    2004-01-01

    The performance of an external-cavity mode-locked semiconductor laser is analyzed theoretically and numerically. Passive mode-locking is described using a fully-distributed time-domain model including fast effects, spectral hole burning and carrier heating. We provide optimization rules in order...... to improve the mode-locking performance, such as reducing the pulsewidth and time-bandwidth product as much as possible. Timing jitter is determined by means of extensive numerical simulations of the model, demontrating that an external modulation is required in order to maintain moderate timing......-jitter and phase-noise levels at low frequencies. The effect of the driving conditions is investigated in order to achieve short pulses and low timing jitter. Our results are in qualitative agreement with reported experiments and predictions obtained from the master equation for mode-locking....

  3. Tunable mode-locked semiconductor laser with Bragg mirror external cavity

    DEFF Research Database (Denmark)

    Yvind, Kresten; Jørgensen, T.; Birkedal, Dan

    2002-01-01

    We present a simplified design for a wavelength tunable external cavity mode-locked laser by employing a wedged GaAs/AlGaAs Bragg mirror. The device emits 4-6 ps pulses at 10 GHz and is tunable over 15 nm. Although, in the present configuration, tunability is limited to 15 nm, however, we have...

  4. Waveguide based external cavity semiconductor lasers

    NARCIS (Netherlands)

    Oldenbeuving, Ruud; Klein, E.J.; Offerhaus, Herman L.; Lee, Christopher James; Verhaegen, M.; Boller, Klaus J.

    2012-01-01

    We report on progress of the project waveguide based external cavity semiconductor laser (WECSL) arrays. Here we present the latest results on our efforts to mode lock an array of tunable, external cavity semiconductor lasers.

  5. Commercial mode-locked vertical external cavity surface emitting lasers

    Science.gov (United States)

    Lubeigt, Walter; Bialkowski, Bartlomiej; Lin, Jipeng; Head, C. Robin; Hempler, Nils; Maker, Gareth T.; Malcolm, Graeme P. A.

    2017-02-01

    In recent years, M Squared Lasers have successfully commercialized a range of mode-locked vertical external cavity surface emitting lasers (VECSELs) operating between 920-1050nm and producing picosecond-range pulses with average powers above 1W at pulse repetition frequencies (PRF) of 200MHz. These laser products offer a low-cost, easy-to-use and maintenance-free tool for the growing market of nonlinear microscopy. However, in order to present a credible alternative to ultrafast Ti-sapphire lasers, pulse durations below 200fs are required. In the last year, efforts have been directed to reduce the pulse duration of the Dragonfly laser system to below 200fs with a target average power above 1W at a PRF of 200MHz. This paper will describe and discuss the latest efforts undertaken to approach these targets in a laser system operating at 990nm. The relatively low PRF operation of Dragonfly lasers represents a challenging requirement for mode-locked VECSELs due to the very short upper state carrier lifetime, on the order of a few nanoseconds, which can lead to double pulsing behavior in longer cavities as the time between consecutive pulses is increased. Most notably, the design of the Dragonfly VECSEL cavity was considerably modified and the laser system extended with a nonlinear pulse stretcher and an additional compression stage. The improved Dragonfly laser system achieved pulse duration as short as 130fs with an average power of 0.85W.

  6. Mode-locked Pr3+-doped silica fiber laser with an external cavity

    DEFF Research Database (Denmark)

    Shi, Yuan; Poulsen, Christian; Sejka, Milan

    1994-01-01

    We present a Pr3+-doped silica-based fiber laser mode-locked by using a linear external cavity with a vibrating mirror. Stable laser pulses with a FWHM of less than 44 ps, peak power greater than 9 W, and repetition rate up to 100 MHz are obtained. The pulse width versus cavity mismatch ΔL and pump...

  7. Passive mode locking in a multisegment laser diode with an external cavity

    International Nuclear Information System (INIS)

    Andreeva, E V; Magnitskiy, Sergey A; Koroteev, Nikolai I; Salik, E; Feinberg, J; Starodubov, D S; Shramenko, M V; Yakubovich, S D

    1999-01-01

    The structure and operating conditions of multisegment laser (GaAl)As diodes with passive locking of the modes of an external cavity (bulk and fibre) were optimised. Regular trains of optical single pulses of picosecond duration were generated in a spectral range 850 - 860 nm. The peak power of these pulses was several watts and the repetition rate was near 1 GHz. Under certain conditions these output pulses were linearly chirped, i.e. they were suitable for subpicosecond time compression. Laboratory prototypes were made of miniature light-emitting modules with these characteristics. (lasers)

  8. Modelling colliding-pulse mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Bischoff, Svend

    or to determine the optimum operation conditions. The purpose of this thesis is to elucidate some of the physics of interest in the field of semiconductor laser modelling, semiconductor optics and fiber optics. To be more specific we will investigate: The Colliding-Pulse Mode-Locked (CPM) Quantum Well (QW) laser...

  9. Dispersion-managed semiconductor mode-locked ring laser.

    Science.gov (United States)

    Resan, Bojan; Archundia, Luis; Delfyett, Peter J; Alphonse, Gerard

    2003-08-01

    A novel breathing-mode external sigma-ring-cavity semiconductor mode-locked laser is developed. Intracavity pulse compression and stretching produce linearly chirped pulses with an asymmetric exponential temporal profile. External dispersion compensation reduces the pulse duration to 274 fs (within 10% of the bandwidth limit).

  10. Semiconductor Mode-Locked Lasers for Optical Communication Systems

    DEFF Research Database (Denmark)

    Yvind, Kresten

    2003-01-01

    The thesis deals with the design and fabrication of semiconductor mode-locked lasers for use in optical communication systems. The properties of pulse sources and characterization methods are described as well as requirements for application in communication systems. Especially, the importance of......, and ways to reduce high-frequency jitter is discussed. The main result of the thesis is a new design of the epitaxial structure that both enables simplified fabrication and improves the properties of monolithic lasers. 40 GHz monolithic lasers with record low jitter and high power is presented as well...

  11. High-pulse energy-stabilized passively mode-locked external cavity inverse bow-tie 980nm laser diode for space applications

    Science.gov (United States)

    Krakowski, M.; Resneau, P.; Garcia, M.; Vinet, E.; Robert, Y.; Lecomte, M.; Parillaud, O.; Gerard, B.; Kundermann, S.; Torcheboeuf, N.; Boiko, D. L.

    2018-02-01

    We report on multi-section inverse bow-tie laser producing mode-locked pulses of 90 pJ energy and 6.5 ps width (895 fs after compression) at 1.3 GHz pulse repetition frequency (PRF) and consuming 2.9 W of electric power. The laser operates in an 80 mm long external cavity. By translation of the output coupling mirror, the PRF was continuously tuned over 37 MHz range without additional adjustments. Active stabilization with a phase lock loop actuating on the driving current has allowed us to reach the PRF relative stability at a 2·10-10 level on 10 s intervals, as required by the European Space Agency (ESA) for inter-satellite long distance measurements.

  12. Theory of Passively Mode-Locked Photonic Crystal Semiconductor Lasers

    DEFF Research Database (Denmark)

    Heuck, Mikkel; Blaaberg, Søren; Mørk, Jesper

    2010-01-01

    We report the first theoretical investigation of passive mode-locking in photonic crystal mode-locked lasers. Related work has investigated coupled-resonator-optical-waveguide structures in the regime of active mode-locking [Opt. Express 13, 4539-4553 (2005)]. An extensive numerical investigation...

  13. Deep-red semiconductor monolithic mode-locked lasers

    Energy Technology Data Exchange (ETDEWEB)

    Kong, L.; Bajek, D.; White, S. E.; Forrest, A. F.; Cataluna, M. A., E-mail: m.a.cataluna@dundee.ac.uk [School of Engineering, Physics and Mathematics, University of Dundee, Dundee DD1 4HN (United Kingdom); Wang, H. L.; Pan, J. Q. [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Wang, X. L.; Cui, B. F. [Key Laboratory of Opto-electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124 (China); Ding, Y. [School of Engineering, Physics and Mathematics, University of Dundee, Dundee DD1 4HN (United Kingdom); School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom)

    2014-12-01

    A deep-red semiconductor monolithic mode-locked laser is demonstrated. Multi-section laser diodes based on an AlGaAs multi-quantum-well structure were passively mode-locked, enabling the generation of picosecond optical pulses at 752 nm, at pulse repetition rates of 19.37 GHz. An investigation of the dependence of the pulse duration as a function of reverse bias revealed a predominantly exponential decay trend of the pulse duration, varying from 10.5 ps down to 3.5 ps, which can be associated with the concomitant reduction of absorption recovery time with increasing applied field. A 30-MHz-tunability of the pulse repetition rate with bias conditions is also reported. The demonstration of such a compact, efficient and versatile ultrafast laser in this spectral region paves the way for its deployment in a wide range of applications such as biomedical microscopy, pulsed terahertz generation as well as microwave and millimeter-wave generation, with further impact on sensing, imaging and optical communications.

  14. Material Engineering for Monolithic Semiconductor Mode-Locked Lasers

    DEFF Research Database (Denmark)

    Kulkova, Irina

    This thesis is devoted to the materials engineering for semiconductor monolithic passively mode-locked lasers (MLLs) as a compact energy-efficient source of ultrashort optical pulses. Up to the present day, the achievement of low-noise sub-picosecond pulse generation has remained a challenge...... application in MLLs. Improved QW laser performance was demonstrated using the asymmetric barrier layer approach. The analysis of the gain characteristics showed that the high population inversion beneficial for noise reduction cannot be achieved for 10 GHz QW MLLs and would have required lowering the modal....... This work has considered the role of the combined ultrafast gain and absorption dynamics in MLLs as a main factor limiting laser performance. An independent optimization of MLL amplifier and saturable absorber active materials was performed. Two promising approaches were considered: quantum dot (QD...

  15. Delay differential equations for mode-locked semiconductor lasers.

    Science.gov (United States)

    Vladimirov, Andrei G; Turaev, Dmitry; Kozyreff, Gregory

    2004-06-01

    We propose a new model for passive mode locking that is a set of ordinary delay differential equations. We assume a ring-cavity geometry and Lorentzian spectral filtering of the pulses but do not use small gain and loss and weak saturation approximations. By means of a continuation method, we study mode-locking solutions and their stability. We find that stable mode locking can exist even when the nonlasing state between pulses becomes unstable.

  16. Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface Emitting Laser Using Atomic Layer Graphene

    Science.gov (United States)

    2015-07-16

    Vertical External Cavity Surface Emitting Lasers). 2)! Installation of a FTIR based temperature dependent reflectivity setup for characterizing VECSELs...and SESAMs (Semiconductor Saturable Absorber Mirrors). 3)! Demonstration of up to 6 Watts CW with InAs QD (Quantum Dot) VECSELs (1250 nm) and 15...AFRL and at other university collaborators such as the University of Arizona. 2.#Installation#of#a# FTIR #based#temperature#dependent#reflectivity

  17. Mode-Locked Semiconductor Lasers for Optical Communication Systems

    DEFF Research Database (Denmark)

    Yvind, Kresten; Larsson, David; Oxenløwe, Leif Katsuo

    2005-01-01

    We present investigations on 10 and 40 GHz monolithic mode-locked lasers for applications in optical communications systems. New all-active lasers with one to three quantum wells have been designed, fabricated and characterized.......We present investigations on 10 and 40 GHz monolithic mode-locked lasers for applications in optical communications systems. New all-active lasers with one to three quantum wells have been designed, fabricated and characterized....

  18. Numerical simulation of passively mode-locked fiber laser based on semiconductor optical amplifier

    Science.gov (United States)

    Yang, Jingwen; Jia, Dongfang; Zhang, Zhongyuan; Chen, Jiong; Liu, Tonghui; Wang, Zhaoying; Yang, Tianxin

    2013-03-01

    Passively mode-locked fiber laser (MLFL) has been widely used in many applications, such as optical communication system, industrial production, information processing, laser weapons and medical equipment. And many efforts have been done for obtaining lasers with small size, simple structure and shorter pulses. In recent years, nonlinear polarization rotation (NPR) in semiconductor optical amplifier (SOA) has been studied and applied as a mode-locking mechanism. This kind of passively MLFL has faster operating speed and makes it easier to realize all-optical integration. In this paper, we had a thorough analysis of NPR effect in SOA. And we explained the principle of mode-locking by SOA and set up a numerical model for this mode-locking process. Besides we conducted a Matlab simulation of the mode-locking mechanism. We also analyzed results under different working conditions and several features of this mode-locking process are presented. Our simulation shows that: Firstly, initial pulse with the peak power exceeding certain threshold may be amplified and compressed, and stable mode-locking may be established. After about 25 round-trips, stable mode-locked pulse can be obtained which has peak power of 850mW and pulse-width of 780fs.Secondly, when the initial pulse-width is greater, narrowing process of pulse is sharper and it needs more round-trips to be stable. Lastly, the bias currents of SOA affect obviously the shape of mode-locked pulse and the mode-locked pulse with high peak power and narrow width can be obtained through adjusting reasonably the bias currents of SOA.

  19. Multipulse dynamics of a passively mode-locked semiconductor laser with delayed optical feedback

    Science.gov (United States)

    Jaurigue, Lina; Krauskopf, Bernd; Lüdge, Kathy

    2017-11-01

    Passively mode-locked semiconductor lasers are compact, inexpensive sources of short light pulses of high repetition rates. In this work, we investigate the dynamics and bifurcations arising in such a device under the influence of time delayed optical feedback. This laser system is modelled by a system of delay differential equations, which includes delay terms associated with the laser cavity and feedback loop. We make use of specialised path continuation software for delay differential equations to analyse the regime of short feedback delays. Specifically, we consider how the dynamics and bifurcations depend on the pump current of the laser, the feedback strength, and the feedback delay time. We show that an important role is played by resonances between the mode-locking frequencies and the feedback delay time. We find feedback-induced harmonic mode locking and show that a mismatch between the fundamental frequency of the laser and that of the feedback cavity can lead to multi-pulse or quasiperiodic dynamics. The quasiperiodic dynamics exhibit a slow modulation, on the time scale of the gain recovery rate, which results from a beating with the frequency introduced in the associated torus bifurcations and leads to gain competition between multiple pulse trains within the laser cavity. Our results also have implications for the case of large feedback delay times, where a complete bifurcation analysis is not practical. Namely, for increasing delay, there is an ever-increasing degree of multistability between mode-locked solutions due to the frequency pulling effect.

  20. Mode-Locking in Broad-Area Semiconductor Lasers Enhanced by Picosecond-Pulse Injection

    OpenAIRE

    Kaiser, J; Fischer, I; Elsasser, W; Gehrig, E; Hess, O

    2004-01-01

    We present combined experimental and theoretical investigations of the picosecond emission dynamics of broad-area semiconductor lasers (BALs). We enhance the weak longitudinal self-mode-locking that is inherent to BALs by injecting a single optical 50-ps pulse, which triggers the output of a distinct regular train of 13-ps pulses. Modeling based on multimode Maxwell-Bloch equations illustrates how the dynamic interaction of the injected pulse with the internal laser field efficiently couples ...

  1. Silicon Photonics Transmitter with SOA and Semiconductor Mode-Locked Laser.

    Science.gov (United States)

    Moscoso-Mártir, Alvaro; Müller, Juliana; Hauck, Johannes; Chimot, Nicolas; Setter, Rony; Badihi, Avner; Rasmussen, Daniel E; Garreau, Alexandre; Nielsen, Mads; Islamova, Elmira; Romero-García, Sebastián; Shen, Bin; Sandomirsky, Anna; Rockman, Sylvie; Li, Chao; Sharif Azadeh, Saeed; Lo, Guo-Qiang; Mentovich, Elad; Merget, Florian; Lelarge, François; Witzens, Jeremy

    2017-10-24

    We experimentally investigate an optical link relying on silicon photonics transmitter and receiver components as well as a single section semiconductor mode-locked laser as a light source and a semiconductor optical amplifier for signal amplification. A transmitter based on a silicon photonics resonant ring modulator, an external single section mode-locked laser and an external semiconductor optical amplifier operated together with a standard receiver reliably supports 14 Gbps on-off keying signaling with a signal quality factor better than 7 for 8 consecutive comb lines, as well as 25 Gbps signaling with a signal quality factor better than 7 for one isolated comb line, both without forward error correction. Resonant ring modulators and Germanium waveguide photodetectors are further hybridly integrated with chip scale driver and receiver electronics, and their co-operability tested. These experiments will serve as the basis for assessing the feasibility of a silicon photonics wavelength division multiplexed link relying on a single section mode-locked laser as a multi-carrier light source.

  2. Various phenomena of self-mode-locked operation in optically pumped semiconductor lasers

    Science.gov (United States)

    Tsou, C. H.; Liang, H. C.; Huang, K. F.; Chen, Y. F.

    2017-02-01

    This work presents several optical experiments to investigate the phenomenon of self-mode locking (SML) in optically pumped semiconductor lasers (OPSLs). First of all, we systematically explore the influence of high-order transverse modes on the SML in an OPSL with a linear cavity. Experimental results reveal that the occurrence of SML can be assisted by the existence of the first high-order transverse mode, and the laser is operated in a well-behaved SML state with the existence of the TEM0,0 mode and the first high-order transverse mode. While more high-order transverse modes are excited, it is found that the pulse train is modulated by more beating frequencies of transverse modes. The temporal behavior becomes the random dynamics when too many high-order transverse modes are excited. We observe that the temporal trace exhibits an intermittent mode-locked state in the absence of high-order transverse modes. In addition to typical mode-locked pulses, we originally observe an intriguing phenomenon of SML in an OPSL related to the formation of bright-dark pulse pairs. We experimentally demonstrated that under the influence of the tiny reflection feedback, the phase locking between lasing longitudinal modes can be assisted to form bright-dark pulse pairs in the scale of round-trip time. A theoretical model based on the multiple reflections in a phase-locked multi-longitudinal-mode laser is developed to confirm the formation of bright-dark pulse pairs.

  3. Electrical addressing and temporal tweezing of localized pulses in passively mode-locked semiconductor lasers

    Science.gov (United States)

    Javaloyes, J.; Camelin, P.; Marconi, M.; Giudici, M.

    2017-08-01

    This work presents an overview of a combined experimental and theoretical analysis on the manipulation of temporal localized structures (LSs) found in passively Vertical-Cavity Surface-Emitting Lasers coupled to resonant saturable absorber mirrors. We show that the pumping current is a convenient parameter for manipulating the temporal Localized Structures, also called localized pulses. While short electrical pulses can be used for writing and erasing individual LSs, we demonstrate that a current modulation introduces a temporally evolving parameter landscape allowing to control the position and the dynamics of LSs. We show that the localized pulses drifting speed in this landscape depends almost exclusively on the local parameter value instead of depending on the landscape gradient, as shown in quasi-instantaneous media. This experimental observation is theoretically explained by the causal response time of the semiconductor carriers that occurs on an finite timescale and breaks the parity invariance along the cavity, thus leading to a new paradigm for temporal tweezing of localized pulses. Different modulation waveforms are applied for describing exhaustively this paradigm. Starting from a generic model of passive mode-locking based upon delay differential equations, we deduce the effective equations of motion for these LSs in a time-dependent current landscape.

  4. On the mechanisms governing the repetition rate of mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mørk, Jesper

    2004-01-01

    We investigate the mechanisms influencing the synchronization locking range of mode-locked lasers. We find that changes in repetition rates can be accomodated through a joint interplay of dispersion and pulse shaping effects.......We investigate the mechanisms influencing the synchronization locking range of mode-locked lasers. We find that changes in repetition rates can be accomodated through a joint interplay of dispersion and pulse shaping effects....

  5. Piezo activated mode tracking system for widely tunable mode-hop-free external cavity mid-IR semiconductor lasers

    Science.gov (United States)

    Wysocki, Gerard (Inventor); Tittel, Frank K. (Inventor); Curl, Robert F. (Inventor)

    2010-01-01

    A widely tunable, mode-hop-free semiconductor laser operating in the mid-IR comprises a QCL laser chip having an effective QCL cavity length, a diffraction grating defining a grating angle and an external cavity length with respect to said chip, and means for controlling the QCL cavity length, the external cavity length, and the grating angle. The laser of claim 1 wherein said chip may be tuned over a range of frequencies even in the absence of an anti-reflective coating. The diffraction grating is controllably pivotable and translatable relative to said chip and the effective QCL cavity length can be adjusted by varying the injection current to the chip. The laser can be used for high resolution spectroscopic applications and multi species trace-gas detection. Mode-hopping is avoided by controlling the effective QCL cavity length, the external cavity length, and the grating angle so as to replicate a virtual pivot point.

  6. Jitter reduction by intracavity active phase modulation in a mode-locked semiconductor laser.

    Science.gov (United States)

    Ozharar, Sarper; Ozdur, Ibrahim; Quinlan, Franklyn; Delfyett, Peter J

    2009-03-01

    We experimentally verify the theory of Haus et al. [IEEE J. Quantum Electron. 40, 41 (2004)] on the effects of timing jitter using intracavity phase modulation on the pulse train of a mode-locked laser. The theory is based on the solution of the Heisenberg-Langevin equation in the presence of dispersion and intracavity phase modulation. Using active intracavity phase modulation, we have reduced the timing jitter on a 10.24 GHz mode-locked diode laser by 50% from 304 to 150 fs integrated from 1 Hz to the Nyquist frequency of 5.12 GHz.

  7. Mode-locked 1.5 micrometers semiconductor optical amplifier fiber ring

    DEFF Research Database (Denmark)

    Pedersen, Niels V.; Jakobsen, Kaj Bjarne; Vaa, Michael

    1996-01-01

    The dynamics of a mode-locked SOA fiber ring are investigated experimentally and numerically. Generation of near transform-limited (time-bandwidth product=0.7) 1.5 μm 54 ps FWHM pulses with a peak power of 2.8 mW at a repetition rate of 960 MHz is demonstrated experimentally. The experimental...

  8. Mode-Locked 1.5 um Semiconductor Optical Fiber Ring

    DEFF Research Database (Denmark)

    Pedersen, Niels Vagn; Jakobsen, Kaj Bjarne; Vaa, Michael

    1996-01-01

    The dynamics of a mode-locked SOA fiber ring are investigated experimentally and numerically. Generation of near transform-limited (time-bandwidth product = 0.7) 1.5 um 54 ps FWHM pulses with a peak power of 2.8 mW at a repetition rate of 960 MHz is demonstrated experimentally. The experimental...

  9. Combination of Transverse Mode Selection and Active Longitudinal Mode-Locking of Broad Area Semiconductor Lasers

    Directory of Open Access Journals (Sweden)

    Christoph Doering

    2014-01-01

    Full Text Available Experimental results of the combination of transverse mode selection and active mode-locking with anti-reflection-coated broad area lasers (BALs are presented. The BALs are subject to feedback from a free-space external Fourier-optical 4f-setup with a reflective spatial frequency filter in the Fourier-plane for transverse mode selection. Driving the BALs with a high frequency modulated pump current above threshold active longitudinal mode-locking is achieved. Pulse durations as low as 88 ps are obtained, while the Gaussian-like fundamental or a higher order transverse mode up to mode number 5 is selected on purpose. Pulse duration and shape are nearly independent of the selected transverse mode.

  10. High brightness photonic band crystal semiconductor lasers in the passive mode locking regime

    Energy Technology Data Exchange (ETDEWEB)

    Rosales, R.; Kalosha, V. P.; Miah, M. J.; Bimberg, D. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany); Posilović, K. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany); PBC Lasers GmbH, Hardenbergstrasse 36, 10623 Berlin (Germany); Pohl, J.; Weyers, M. [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, Berlin 12489 (Germany)

    2014-10-20

    High brightness photonic band crystal lasers in the passive mode locking regime are presented. Optical pulses with peak power of 3 W and peak brightness of about 180 MW cm{sup −2} sr{sup −1} are obtained on a 5 GHz device exhibiting 15 ps pulses and a very low beam divergence in both the vertical and horizontal directions.

  11. High brightness photonic band crystal semiconductor lasers in the passive mode locking regime

    International Nuclear Information System (INIS)

    Rosales, R.; Kalosha, V. P.; Miah, M. J.; Bimberg, D.; Posilović, K.; Pohl, J.; Weyers, M.

    2014-01-01

    High brightness photonic band crystal lasers in the passive mode locking regime are presented. Optical pulses with peak power of 3 W and peak brightness of about 180 MW cm −2  sr −1 are obtained on a 5 GHz device exhibiting 15 ps pulses and a very low beam divergence in both the vertical and horizontal directions.

  12. Liquid detection with InGaAsP semiconductor lasers having multiple short external cavities.

    Science.gov (United States)

    Zhu, X; Cassidy, D T

    1996-08-20

    A liquid detection system consisting of a diode laser with multiple short external cavities (MSXC's) is reported. The MSXC diode laser operates single mode on one of 18 distinct modes that span a range of 72 nm. We selected the modes by setting the length of one of the external cavities using a piezoelectric positioner. One can measure the transmission through cells by modulating the injection current at audio frequencies and using phase-sensitive detection to reject the ambient light and reduce 1/f noise. A method to determine regions of single-mode operation by the rms of the output of the laser is described. The transmission data were processed by multivariate calibration techniques, i.e., partial least squares and principal component regression. Water concentration in acetone was used to demonstrate the performance of the system. A correlation coefficient of R(2) = 0.997 and 0.29% root-mean-square error of prediction are found for water concentration over the range of 2-19%.

  13. Calibrated Link Budget of a Silicon Photonics WDM Transceiver with SOA and Semiconductor Mode-Locked Laser.

    Science.gov (United States)

    Moscoso-Mártir, Alvaro; Müller, Juliana; Islamova, Elmira; Merget, Florian; Witzens, Jeremy

    2017-09-20

    Based on the single channel characterization of a Silicon Photonics (SiP) transceiver with Semiconductor Optical Amplifier (SOA) and semiconductor Mode-Locked Laser (MLL), we evaluate the optical power budget of a corresponding Wavelength Division Multiplexed (WDM) link in which penalties associated to multi-channel operation and the management of polarization diversity are introduced. In particular, channel cross-talk as well as Cross Gain Modulation (XGM) and Four Wave Mixing (FWM) inside the SOA are taken into account. Based on these link budget models, the technology is expected to support up to 12 multiplexed channels without channel pre-emphasis or equalization. Forward Error Correction (FEC) does not appear to be required at 14 Gbps if the SOA is maintained at 25 °C and MLL-to-SiP as well as SiP-to-SOA interface losses can be maintained below 3 dB. In semi-cooled operation with an SOA temperature below 55 °C, multi-channel operation is expected to be compatible with standard 802.3bj Reed-Solomon FEC at 14 Gbps provided interface losses are maintained below 4.5 dB. With these interface losses and some improvements to the Transmitter (Tx) and Receiver (Rx) electronics, 25 Gbps multi-channel operation is expected to be compatible with 7% overhead hard decision FEC.

  14. Semiconductor laser with a birefringent external cavity for information systems with wavelength division multiplexing

    Energy Technology Data Exchange (ETDEWEB)

    Paranin, V D; Matyunin, S A; Tukmakov, K N [S.P. Korolev Samara State Aerospace University, Samara (Russian Federation)

    2013-10-31

    The spectrum of a semiconductor laser with a birefringent external Gires – Tournois cavity is studied. The generation of two main laser modes corresponding to the ordinary and extraordinary wave resonances is found. It is shown that the radiation spectrum is controlled with a high energy efficiency without losses for spectral filtration. The possibility of using two-mode lasing in optical communication systems with wavelength division multiplexing is shown. (control of laser radiation parameters)

  15. Investigations of repetition rate stability of a mode-locked quantum dot semiconductor laser in an auxiliary optical fiber cavity

    DEFF Research Database (Denmark)

    Breuer, Stefan; Elsässer, Wolfgang; McInerney, J.G.

    2010-01-01

    We have investigated experimentally the pulse train (mode beating) stability of a monolithic mode-locked multi-section quantum-dot laser with an added passive auxiliary optical fiber cavity. Addition of the weakly coupled (¿ -24dB) cavity reduces the current-induced shift d¿/dI of the principal...

  16. Optical self-injection mode-locking of semiconductor optical amplifier fiber ring with electro-absorption modulation—fundamentals and applications

    Science.gov (United States)

    Chi, Yu-Chieh; Lin, Gong-Ru

    2013-04-01

    The optical self-injection mode-locking of a semiconductor optical amplifier incorporated fiber ring laser (SOAFL) with spectrally sliced multi-channel carriers is demonstrated for applications. The synthesizer-free SOAFL pulse-train is delivered by optical injection mode-locking with a 10 GHz self-pulsed electro-absorption modulator (EAM). Such a coupled optical and electronic resonator architecture facilitates a self-feedback oscillation with a higher Q-factor and lower phase/intensity noises when compared with conventional approaches. The theoretical model of such an injection-mode-locking SOAFL is derived to improve the self-pulsating performance of the optical return-to-zero (RZ) carrier, thus providing optimized pulsewidth, pulse extinction ratio, effective Q-factor, frequency variation and timing jitter of 11.4 ps, 9.1 dB, 4 × 105, pulsed carrier is also employed for the application in a 10 Gbit s-1 bi-directional WDM transmission network with down-stream RZ binary phase-shift keying (RZ-BPSK) and up-stream re-modulated RZ on-off-keying (RZ-OOK) formats. Under BPSK/OOK bi-directional data transmission, the self-pulsed harmonic mode-locking SOAFL simultaneously provides four to six WDM channels for down-stream RZ-BPSK and up-stream RZ-OOK formats with receiving sensitivities of -17 and -15.2 dBm at a bit error rate of 10-9, respectively.

  17. Passive, active, and hybrid mode-locking in a self-optimized ultrafast diode laser

    Science.gov (United States)

    Alloush, M. Ali; Pilny, Rouven H.; Brenner, Carsten; Klehr, Andreas; Knigge, Andrea; Tränkle, Günther; Hofmann, Martin R.

    2018-02-01

    Semiconductor lasers are promising sources for generating ultrashort pulses. They are directly electrically pumped, allow for a compact design, and therefore they are cost-effective alternatives to established solid-state systems. Additionally, their emission wavelength depends on the bandgap which can be tuned by changing the semiconductor materials. Theoretically, the obtained pulse width can be few tens of femtoseconds. However, the generated pulses are typically in the range of several hundred femtoseconds only. Recently, it was shown that by implementing a spatial light modulator (SLM) for phase and amplitude control inside the resonator the optical bandwidth can be optimized. Consequently, by using an external pulse compressor shorter pulses can be obtained. We present a Fourier-Transform-External-Cavity setup which utilizes an ultrafast edge-emitting diode laser. The used InGaAsP diode is 1 mm long and emits at a center wavelength of 850 nm. We investigate the best conditions for passive, active and hybrid mode-locking operation using the method of self-adaptive pulse shaping. For passive mode-locking, the bandwidth is increased from 2.34 nm to 7.2 nm and ultrashort pulses with a pulse width of 216 fs are achieved after external pulse compression. For active and hybrid mode-locking, we also increased the bandwidth. It is increased from 0.26 nm to 5.06 nm for active mode-locking and from 3.21 nm to 8.7 nm for hybrid mode-locking. As the pulse width is strongly correlated with the bandwidth of the laser, we expect further reduction in the pulse duration by increasing the bandwidth.

  18. Mode-locked semiconductor laser for long and absolute distance measurement based on laser pulse repetition frequency sweeping: a comparative study between three types of lasers

    Science.gov (United States)

    Castro Alves, D.; Abreu, Manuel; Cabral, Alexandre; Rebordão, J. M.

    2017-08-01

    In this work we present a study on three types of semiconductor mode-locked lasers as possible sources for a high precision absolute distance metrology measurement concept based on pulse repetition frequency (PRF) sweep. In this work, we evaluated one vertical emission laser and two transversal emission sources. The topology of the gain element is quantum-well, quantum-dot and quantum-dash, respectively. Only the vertical emission laser has optical pump, whilst the others operate with electric pumping. The quantum-dash laser does not have a saturable absorber in its configuration but relies on a dispersion compensating fiber for generating pulses. The bottleneck of vertical emission laser is his high power density pump (4.5W/165μm), increasing the vulnerability of damaging the gain element. The other lasers, i.e., the single (quantum-dash) and double section (quantum-dot) lasers present good results either in terms of applicability to the metrology system or in terms of robustness. Using RF injection on the gain element, both lasers show good PRF stabilization results (better than σy(10ms) = 10-9 ) which is a requirement for the mentioned metrology technique.

  19. Comparison of the noise performance of 10 GHz repetition rate quantum-dot and quantum well monolithic mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Carpintero, G.; Thompson, M. G.; Yvind, Kresten

    2011-01-01

    Mode-locked lasers are commonly used in carrier-wave signal generation systems because of their excellent phase noise performance. Owing to the importance of this key parameter, this study presents a like-for-like comparison of the noise performance of the passive mode-locked regime of two devices...... fabricated with different material gain systems, one quantum well and the other quantum dot (QD), both with a monolithic all-active two-section mode-locked structure. Two important factors are identified as having a significant effect on the noise performance, the RF linewidth of the first harmonic...... and the shape of the noise pedestals, both depending on the passive mode-locked bias conditions. Nevertheless, the dominant contribution of the RF linewidth to the phase noise, which is significantly narrower for the QD laser, makes this material more suitable for optical generation of low-noise millimetre...

  20. Effect of thermal management on the properties of saturable absorber mirrors in high-power mode-locked semiconductor disk lasers

    International Nuclear Information System (INIS)

    Rantamäki, Antti; Lyytikäinen, Jari; Jari Nikkinen; Okhotnikov, Oleg G

    2011-01-01

    The thermal management of saturable absorbers is shown to have a critical impact on a high-power mode-locked disk laser. The absorber with efficient heat removal makes it possible to generate ultrashort pulses with high repetition rates and high power density.

  1. An automatic mode-locked system for passively mode-locked fiber laser

    Science.gov (United States)

    Li, Sha; Xu, Jun; Chen, Guoliang; Mei, Li; Yi, Bo

    2013-12-01

    This paper designs and implements one kind of automatic mode-locked system. It can adjust a passively mode-locked fiber laser to keep steady mode-locked states automatically. So the unsteadiness of traditional passively mode-locked fiber laser can be avoided. The system transforms optical signals into electrical pulse signals and sends them into MCU after processing. MCU calculates the frequency of the signals and judges the state of the output based on a quick judgment algorithm. A high-speed comparator is used to check the signals and the comparison voltage can be adjusted to improve the measuring accuracy. Then by controlling two polarization controllers at an angle of 45degrees to each other, MCU extrudes the optical fibers to change the polarization until it gets proper mode-locked output. So the system can continuously monitor the output signal and get it back to mode-locked states quickly and automatically. States of the system can be displayed on the LCD and PC. The parameters of the steady mode-locked states can be stored into an EEPROM so that the system will get into mode-locked states immediately next time. Actual experiments showed that, for a 6.238MHz passively mode-locked fiber lasers, the system can get into steady mode-locked states automatically in less than 90s after starting the system. The expected lock time can be reduced to less than 20s after follow up improvements.

  2. Widely tunable all-fiber SESAM mode-locked Ytterbium laser with a linear cavity

    Science.gov (United States)

    Zou, Feng; Wang, Zhaokun; Wang, Ziwei; Bai, Yang; Li, Qiurui; Zhou, Jun

    2017-07-01

    We present a widely tunable all-fiber mode-locked laser based on semiconductor saturable absorber mirror (SESAM) with a linear cavity design. An easy-to-use tunable bandpass filter based on thin film cavity technology is employed to tune the wavelength. By tuning the filter and adjusting the polarization controller, mode-locked operation can be achieved over the range of 1023 nm-1060 nm. With the polarization controller settled, mode-locked operation can be preserved and the wavelength can be continuously tuned from 1030 nm to 1053 nm. At 1030 nm, the laser delivers 9.6 mw average output power with 15.4 ps 10.96 MHz pulses at fundamental mode-locked operation.

  3. Class-A mode-locked lasers: Fundamental solutions

    Science.gov (United States)

    Kovalev, Anton V.; Viktorov, Evgeny A.

    2017-11-01

    We consider a delay differential equation (DDE) model for mode-locked operation in class-A semiconductor lasers containing both gain and absorber sections. The material processes are adiabatically eliminated as these are considered fast in comparison to the delay time for a long cavity device. We determine the steady states and analyze their bifurcations using DDE-BIFTOOL [Engelborghs et al., ACM Trans. Math. Software 28, 1 (2002)]. Multiple forms of coexistence, transformation, and hysteretic behavior of stable steady states and fundamental periodic regimes are discussed in bifurcation diagrams.

  4. Novel design of low-jitter 10 GHz all-active monolithic mode-locked lasers

    DEFF Research Database (Denmark)

    Larsson, David; Yvind, Kresten; Christiansen, Lotte Jin

    2004-01-01

    Using a novel design, we have fabricated 10 GHz all-active monolithic mode-locked semiconductor lasers that generate 1.4 ps pulses with record-low timing jitter. The dynamical properties of lasers with 1 and 2 QWs are compared.......Using a novel design, we have fabricated 10 GHz all-active monolithic mode-locked semiconductor lasers that generate 1.4 ps pulses with record-low timing jitter. The dynamical properties of lasers with 1 and 2 QWs are compared....

  5. Mode-locked silicon evanescent lasers.

    Science.gov (United States)

    Koch, Brian R; Fang, Alexander W; Cohen, Oded; Bowers, John E

    2007-09-03

    We demonstrate electrically pumped lasers on silicon that produce pulses at repetition rates up to 40 GHz. The mode locked lasers generate 4 ps pulses with low jitter and extinction ratios above 18 dB, making them suitable for data and telecommunication transmitters and for clock generation and distribution. Results of both passive and hybrid mode locking are discussed. This type of device could enable new silicon based integrated technologies, such as optical time division multiplexing (OTDM), wavelength division multiplexing (WDM), and optical code division multiple access (OCDMA).

  6. A compact chaotic laser device with a two-dimensional external cavity structure

    Energy Technology Data Exchange (ETDEWEB)

    Sunada, Satoshi, E-mail: sunada@se.kanazawa-u.ac.jp; Adachi, Masaaki [Faculty of Mechanical Engineering, Institute of Science and Engineering, Kanazawa University, Kakuma-machi, Kanazawa, Ishikawa 920-1192 (Japan); Fukushima, Takehiro [Department of Information and Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197 (Japan); Shinohara, Susumu; Arai, Kenichi [NTT Communication Science Laboratories, NTT Corporation, 2-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-0237 (Japan); Harayama, Takahisa [NTT Communication Science Laboratories, NTT Corporation, 2-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-0237 (Japan); Department of Mechanical Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan)

    2014-06-16

    We propose a compact chaotic laser device, which consists of a semiconductor laser and a two-dimensional (2D) external cavity for delayed optical feedback. The overall size of the device is within 230 μm × 1 mm. A long time delay sufficient for chaos generation can be achieved with the small area by the multiple reflections at the 2D cavity boundary, and the feedback strength is controlled by the injection current to the external cavity. We experimentally demonstrate that a variety of output properties, including chaotic output, can be selectively generated by controlling the injection current to the external cavity.

  7. Low-jitter and high-power 40 GHz all-active mode-locked lasers

    DEFF Research Database (Denmark)

    Yvind, Kresten; Larsson, David; Christiansen, Lotte Jin

    2004-01-01

    A novel design strategy for the epitaxial structure of monolithic mode-locked semiconductor lasers is presented. Using an all-active design, we fabricate 40-GHz lasers generating 2.8-ps almost chirp-free pulses with record low high-frequency jitter and more than 7-mW fiber coupled output power....

  8. Fourier domain mode-locked swept source at 1050 nm based on a tapered amplifier

    DEFF Research Database (Denmark)

    Marschall, Sebastian; Klein, Thomas; Wieser, Wolfgang

    2010-01-01

    While swept source optical coherence tomography (OCT) in the 1050 nm range is promising for retinal imaging, there are certain challenges. Conventional semiconductor gain media have limited output power, and the performance of high-speed Fourier domain mode-locked (FDML) lasers suffers from...

  9. Control of fibre laser mode-locking by narrow-band Bragg gratings

    International Nuclear Information System (INIS)

    Laegsgaard, J

    2008-01-01

    The use of narrow-band high-reflectivity fibre Bragg gratings (FBGs) as end mirrors in a fibre laser cavity with passive mode-locking provided by a semiconductor saturable absorber mirror (SESAM) is investigated numerically. The FBG is found to control the energy range of stable mode-locking, which may be shifted far outside the regime of SESAM saturation by a suitable choice of FBG and cavity length. The pulse shape is controlled by the combined effects of FBG dispersion and self-phase modulation in the fibres, and a few ps pulses can be obtained with standard uniform FBGs

  10. Actively mode-locked Raman fiber laser.

    Science.gov (United States)

    Yang, Xuezong; Zhang, Lei; Jiang, Huawei; Fan, Tingwei; Feng, Yan

    2015-07-27

    Active mode-locking of Raman fiber laser is experimentally investigated for the first time. An all fiber connected and polarization maintaining loop cavity of ~500 m long is pumped by a linearly polarized 1120 nm Yb fiber laser and modulated by an acousto-optic modulator. Stable 2 ns width pulse train at 1178 nm is obtained with modulator opening time of > 50 ns. At higher power, pulses become longer, and second order Raman Stokes could take place, which however can be suppressed by adjusting the open time and modulation frequency. Transient pulse evolution measurement confirms the absence of relaxation oscillation in Raman fiber laser. Tuning of repetition rate from 392 kHz to 31.37 MHz is obtained with harmonic mode locking.

  11. Mode-locking via dissipative Faraday instability.

    Science.gov (United States)

    Tarasov, Nikita; Perego, Auro M; Churkin, Dmitry V; Staliunas, Kestutis; Turitsyn, Sergei K

    2016-08-09

    Emergence of coherent structures and patterns at the nonlinear stage of modulation instability of a uniform state is an inherent feature of many biological, physical and engineering systems. There are several well-studied classical modulation instabilities, such as Benjamin-Feir, Turing and Faraday instability, which play a critical role in the self-organization of energy and matter in non-equilibrium physical, chemical and biological systems. Here we experimentally demonstrate the dissipative Faraday instability induced by spatially periodic zig-zag modulation of a dissipative parameter of the system-spectrally dependent losses-achieving generation of temporal patterns and high-harmonic mode-locking in a fibre laser. We demonstrate features of this instability that distinguish it from both the Benjamin-Feir and the purely dispersive Faraday instability. Our results open the possibilities for new designs of mode-locked lasers and can be extended to other fields of physics and engineering.

  12. Mode-locked Ti:sapphire laser oscillators pumped by wavelength-multiplexed laser diodes

    Science.gov (United States)

    Sugiyama, Naoto; Tanaka, Hiroki; Kannari, Fumihiko

    2018-05-01

    We directly pumped a Ti:sapphire laser by combining 478 and 520 nm laser diodes to prevent the effect of absorption loss induced by the pump laser of shorter wavelengths (∼450 nm). We obtain a continuous-wave output power of 660 mW at a total incident pump power of 3.15 W. We demonstrate mode locking using a semiconductor saturable absorber mirror, and 126 fs pulses were obtained at a repetition rate of 192 MHz. At the maximum pump power, the average output power is 315 mW. Shorter mode-locked pulses of 42 and 48 fs were respectively achieved by Kerr-lens mode locking with average output powers of 280 and 360 mW at a repetition rate of 117 MHz.

  13. Fabrication and Characterisation of Low-noise Monolithic Mode-locked Lasers

    DEFF Research Database (Denmark)

    Larsson, David

    2007-01-01

    This thesis deals with the fabrication and characterisation of monolithic semiconductor mode-locked lasers for use in optical communication systems. Other foreseeable applications may be as sources in microwave photonics and optical sampling. The thesis also deals with the design and fabrication...... of intracavity monolithically integrated filters. The common dnominator among the diffrent parts of the thesis is how to achieve and measure the lowest possible noise. Achieving low noise has been pinpointed as one of the most important and difficult challenges for semiconductor mode-locked lasers. The main...... result of this thesis are a fabrication process of a monolithic and deeply etched distributed Bragg reflector and a characterisation system for measurement of quantum limitid timing noise at high repetition rates. The Bragg reflector is a key component in achieving transform limited pulses with low noise...

  14. Modeling and experimental verification of laser self-mixing interference phenomenon with the structure of two-external-cavity feedback

    Science.gov (United States)

    Chen, Peng; Liu, Yuwei; Gao, Bingkun; Jiang, Chunlei

    2018-03-01

    A semiconductor laser employed with two-external-cavity feedback structure for laser self-mixing interference (SMI) phenomenon is investigated and analyzed. The SMI model with two directions based on F-P cavity is deduced, and numerical simulation and experimental verification were conducted. Experimental results show that the SMI with the structure of two-external-cavity feedback under weak light feedback is similar to the sum of two SMIs.

  15. Porous photonic crystal external cavity laser biosensor

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Qinglan [Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Peh, Jessie; Hergenrother, Paul J. [Department of Chemistry, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Cunningham, Brian T. [Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Department of Bioengineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)

    2016-08-15

    We report the design, fabrication, and testing of a photonic crystal (PC) biosensor structure that incorporates a porous high refractive index TiO{sub 2} dielectric film that enables immobilization of capture proteins within an enhanced surface-area volume that spatially overlaps with the regions of resonant electromagnetic fields where biomolecular binding can produce the greatest shifts in photonic crystal resonant wavelength. Despite the nanoscale porosity of the sensor structure, the PC slab exhibits narrowband and high efficiency resonant reflection, enabling the structure to serve as a wavelength-tunable element of an external cavity laser. In the context of sensing small molecule interactions with much larger immobilized proteins, we demonstrate that the porous structure provides 3.7× larger biosensor signals than an equivalent nonporous structure, while the external cavity laser (ECL) detection method provides capability for sensing picometer-scale shifts in the PC resonant wavelength caused by small molecule binding. The porous ECL achieves a record high figure of merit for label-free optical biosensors.

  16. Coupled opto electronic oscillator with a passively mode locked extended cavity diode laser

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jeongmin; Jang, Gwang Hoon; Yoon, Duseong; Song, Minsoo; Yoon, Tai Hyun [Korea Univ., Seoul (Korea, Republic of)

    2008-11-15

    An opto electronic oscillator(OEO)has very unique properties compared to the conventional quartz based microwave oscillators in that its oscillation frequency is determined by the beat note frequency of a phase coherent optical frequency comb generated as a side bands to an optical single mode carrier by using an electro optic modulator (EOM)or a direct current modulation of a semiconductor laser. Recently, a different type of OEO called a COEO has been demonstrated, where the optical carrier in the OEO system has been replaced by a mode locked laser so that an EOM or a direct current modulation are no longer necessary, but has potentially a much lower phase noise thanks to the high Q value of the optical frequency comb due to the mode locking mechanism. In this paper, we propose and demonstrate a COEO based on a passively mode locked ECDL at 852nm in which the fourth harmonic of the repetition frequency of the ECDL matched exactly the ground state hyperfine splitting frequency of the Cs atoms.

  17. Coupled opto electronic oscillator with a passively mode locked extended cavity diode laser

    International Nuclear Information System (INIS)

    Lee, Jeongmin; Jang, Gwang Hoon; Yoon, Duseong; Song, Minsoo; Yoon, Tai Hyun

    2008-01-01

    An opto electronic oscillator(OEO)has very unique properties compared to the conventional quartz based microwave oscillators in that its oscillation frequency is determined by the beat note frequency of a phase coherent optical frequency comb generated as a side bands to an optical single mode carrier by using an electro optic modulator (EOM)or a direct current modulation of a semiconductor laser. Recently, a different type of OEO called a COEO has been demonstrated, where the optical carrier in the OEO system has been replaced by a mode locked laser so that an EOM or a direct current modulation are no longer necessary, but has potentially a much lower phase noise thanks to the high Q value of the optical frequency comb due to the mode locking mechanism. In this paper, we propose and demonstrate a COEO based on a passively mode locked ECDL at 852nm in which the fourth harmonic of the repetition frequency of the ECDL matched exactly the ground state hyperfine splitting frequency of the Cs atoms

  18. Power-efficient III-V/silicon external cavity DBR lasers.

    Science.gov (United States)

    Zilkie, A J; Seddighian, P; Bijlani, B J; Qian, W; Lee, D C; Fathololoumi, S; Fong, J; Shafiiha, R; Feng, D; Luff, B J; Zheng, X; Cunningham, J E; Krishnamoorthy, A V; Asghari, M

    2012-10-08

    We report the design and characterization of external-cavity DBR lasers built with a III-V-semiconductor reflective-SOA with spot-size converter edge-coupled to SOI waveguides containing Bragg grating mirrors. The un-cooled lasers have wall-plug-efficiencies of up to 9.5% at powers of 6 mW. The lasers are suitable for making power efficient, hybrid WDM transmitters in a CMOS-compatible SOI optical platform.

  19. Monolithic Hybrid and Passive Mode-Locked 40GHz Quantum Dot Laser Diodes

    DEFF Research Database (Denmark)

    Thompson, M. G.; Larsson, David; Rae, A. R.

    2006-01-01

    For the first time hybrid and passive mode-locking jitter performance is investigated in 40GHz quantum-dot mode-locked lasers. Record low passive mode-locking jitter of 219fs is presented, along with promising hybrid mode-locking results of 124fs....

  20. Wide-band residual phase-noise measurements on 40-GHz monolithic mode-locked lasers

    DEFF Research Database (Denmark)

    Larsson, David; Hvam, Jørn Märcher

    2005-01-01

    We have performed wide-band residual phase-noise measurements on semiconductor 40-GHz mode-locked lasers by employing electrical waveguide components for the radio-frequency circuit. The intrinsic timing jitters of lasers with one, two, and three quantum wells (QW) are compared and our design...... prediction, concerning noise versus number of QWs, for the first time corroborated by experiments. A minimum jitter of 44 fs is found, by extrapolating to the Nyquist frequency, for the one-QW device having nearly transform-limited pulses of 1.2 ps. This jitter is nearly three times lower than for a three...

  1. Individual optimization of InAlGaAsP-InP sections for 1.55-μm passively mode-locked lasers

    DEFF Research Database (Denmark)

    Kulkova, Irina; Larsson, David; Semenova, Elizaveta

    2012-01-01

    We present integrated single QW semiconductor optical amplifier and MQW electroabsorber modulator based on InAlGaAsP-InP materials for application in a monolithic mode-locked laser. Optimized structures with high-quality butt-joint interfaces are demonstrated.......We present integrated single QW semiconductor optical amplifier and MQW electroabsorber modulator based on InAlGaAsP-InP materials for application in a monolithic mode-locked laser. Optimized structures with high-quality butt-joint interfaces are demonstrated....

  2. Tunable high-power narrow-spectrum external-cavity diode laser based on tapered amplifier at 668 nm

    DEFF Research Database (Denmark)

    Chi, Mingjun; Erbert, G.; Sumpf, B.

    2010-01-01

    A 668 nm tunable high-power narrow-spectrum diode laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The laser system is tunable from 659 to 675 nm. As high as 1.38 W output power is obtained at 668.35 nm. The emission spectral bandwidth is less than...

  3. Diode array pumped, non-linear mirror Q-switched and mode-locked ...

    Indian Academy of Sciences (India)

    Abstract. A non-linear mirror consisting of a lithium triborate crystal and a dichroic output coupler are used to mode-lock (passively) an Nd : YVO4 laser, pumped by a diode laser array. The laser can operate both in cw mode-locked and simultaneously Q-switched and mode-locked (QML) regime. The peak power of the laser ...

  4. Diode array pumped, non-linear mirror Q-switched and mode-locked ...

    Indian Academy of Sciences (India)

    A non-linear mirror consisting of a lithium triborate crystal and a dichroic output coupler are used to mode-lock (passively) an Nd : YVO4 laser, pumped by a diode laser array. The laser can operate both in cw mode-locked and simultaneously Q-switched and mode-locked (QML) regime. The peak power of the laser while ...

  5. Diode array pumped, non-linear mirror Q-switched and mode-locked

    Indian Academy of Sciences (India)

    A non-linear mirror consisting of a lithium triborate crystal and a dichroic output coupler are used to mode-lock (passively) an Nd : YVO4 laser, pumped by a diode laser array. The laser can operate both in cw mode-locked and simultaneously Q-switched and mode-locked (QML) regime. The peak power of the laser while ...

  6. Ring-resonator-integrated tunable external cavity laser employing EAM and SOA.

    Science.gov (United States)

    Yoon, Ki-Hong; Kwon, O-Kyun; Kim, Ki Soo; Choi, Byung-Seok; Oh, Su Hwan; Kim, Hyun Su; Sim, Jae-Sik; Kim, Chul Soo

    2011-12-05

    We propose and demonstrate a tunable external cavity laser (ECL) composed of a polymer Bragg reflector (PBR) and integrated gain chip with gain, a ring resonator, an electro-absorption modulator (EAM), and a semiconductor optical amplifier (SOA). The cavity of the laser is composed of the PBR, gain, and ring resonator. The ring resonator reflects the predetermined wavelengths into the gain region and transmits the output signal into integrated devices such as the EAM and SOA. The output wavelength of the tunable laser is discretely tuned in steps of about 0.8 nm through the thermal-optic effect of the PBR and predetermined mode spacing of the ring resonator.

  7. Quantum dot SOA/silicon external cavity multi-wavelength laser.

    Science.gov (United States)

    Zhang, Yi; Yang, Shuyu; Zhu, Xiaoliang; Li, Qi; Guan, Hang; Magill, Peter; Bergman, Keren; Baehr-Jones, Thomas; Hochberg, Michael

    2015-02-23

    We report a hybrid integrated external cavity, multi-wavelength laser for high-capacity data transmission operating near 1310 nm. This is the first demonstration of a single cavity multi-wavelength laser in silicon to our knowledge. The device consists of a quantum dot reflective semiconductor optical amplifier and a silicon-on-insulator chip with a Sagnac loop mirror and microring wavelength filter. We show four major lasing peaks from a single cavity with less than 3 dB power non-uniformity and demonstrate error-free 4 × 10 Gb/s data transmission.

  8. Color center lasers passively mode locked by quantum wells

    International Nuclear Information System (INIS)

    Islam, M.N.; Soccolich, C.E.; Bar-Joseph, I.; Sauer, N.; Chang, T.Y.; Miller, B.I.

    1989-01-01

    This paper describes how, using multiple quantum well (MQW) saturable absorbers, the authors passively mode locked a NaCl color center laser to produce 275 fs transform-limited, pedestal-free pulses with as high as 3.7 kW peak power. The pulses are tunable from λ = 1.59 to 1.7 μm by choosing MQW's with different bandgaps. They shortened the output pulses from the laser to 25 fs using the technique of soliton compression in a fiber. The steady-state operation of the laser requires the combination of a fast saturable absorber and gain saturation. In addition to the NaCl laser, they passively mode locked a Tl 0 (1):KCl color center laser and produced -- 22 ps pulses. Although the 275 fs pulses from the NaCl laser are Gaussian, when broadened, the pulses acquire an asymmetric spectrum because of carrier-induced refractive index changes

  9. Dispersion engineering of mode-locked fibre lasers

    Science.gov (United States)

    Woodward, R. I.

    2018-03-01

    Mode-locked fibre lasers are important sources of ultrashort pulses, where stable pulse generation is achieved through a balance of periodic amplitude and phase evolutions. A range of distinct cavity pulse dynamics have been revealed, arising from the interplay between dispersion and nonlinearity in addition to dissipative processes such as filtering. This has led to the discovery of numerous novel operating regimes, offering significantly improved laser performance. In this Topical Review, we summarise the main steady-state pulse dynamics reported to date through cavity dispersion engineering, including average solitons, dispersion-managed solitons, dissipative solitons, giant-chirped pulses and similaritons. Characteristic features and the stabilisation mechanism of each regime are described, supported by numerical modelling, in addition to the typical performance and limitations. Opportunities for further pulse energy scaling are discussed, in addition to considering other recent advances including automated self-tuning cavities and fluoride-fibre-based mid-infrared mode-locked lasers.

  10. Chirp of monolithic colliding pulse mode-locked diode lasers

    DEFF Research Database (Denmark)

    Hofmann, M.; Bischoff, S.; Franck, Thorkild

    1997-01-01

    Spectrally resolved streak camera measurements of picosecond pulses emitted by hybridly colliding pulse mode-locked (CPM) laser diodes are presented in this letter. Depending on the modulation frequency both blue-chirped (upchirped) and red-chirped (downchirped) pulses can be observed. The two...... different regimes and the transition between them are characterized experimentally and the behavior is explained on the basis of our model for the CPM laser dynamics. (C) 1997 American Institute of Physics....

  11. Widely power-tunable polarization-independent ultrafast mode-locked fiber laser using bulk InN as saturable absorber.

    Science.gov (United States)

    Jimenez-Rodriguez, M; Monteagudo-Lerma, L; Monroy, E; González-Herráez, M; Naranjo, F B

    2017-03-06

    The growing demand of ultrafast mode-locked fiber lasers in the near infrared has boosted the research activity in this area. One of the most convenient ways to achieve passive mode locking consists of inserting a semiconductor saturable absorber in the laser cavity to modulate the losses. However, in such a configuration, the limited power range of operation is still an unsolved issue. Here we report the fabrication of an ultrafast, high-power, widely power-tunable and non-polarization-dependent mode-locked fiber laser operating at 1.55 µm, using an InN layer as saturable absorber. With post-amplification, this laser delivers 55-fs pulses with a repetition rate of 4.84 MHz and peak power in the range of 1 MW in an all-fiber arrangement.

  12. Wavelength-Agile External-Cavity Diode Laser for DWDM

    Science.gov (United States)

    Pilgrim, Jeffrey S.; Bomse, David S.

    2006-01-01

    A prototype external-cavity diode laser (ECDL) has been developed for communication systems utilizing dense wavelength- division multiplexing (DWDM). This ECDL is an updated version of the ECDL reported in Wavelength-Agile External- Cavity Diode Laser (LEW-17090), NASA Tech Briefs, Vol. 25, No. 11 (November 2001), page 14a. To recapitulate: The wavelength-agile ECDL combines the stability of an external-cavity laser with the wavelength agility of a diode laser. Wavelength is modulated by modulating the injection current of the diode-laser gain element. The external cavity is a Littman-Metcalf resonator, in which the zeroth-order output from a diffraction grating is used as the laser output and the first-order-diffracted light is retro-reflected by a cavity feedback mirror, which establishes one end of the resonator. The other end of the resonator is the output surface of a Fabry-Perot resonator that constitutes the diode-laser gain element. Wavelength is selected by choosing the angle of the diffracted return beam, as determined by position of the feedback mirror. The present wavelength-agile ECDL is distinguished by design details that enable coverage of all 60 channels, separated by 100-GHz frequency intervals, that are specified in DWDM standards.

  13. Characterization of a FBG sensor interrogation system based on a mode-locked laser scheme.

    Science.gov (United States)

    Madrigal, Javier; Fraile-Peláez, Francisco Javier; Zheng, Di; Barrera, David; Sales, Salvador

    2017-10-02

    This paper is focused on the characterization of a fiber Bragg grating (FBG) sensor interrogation system based on a fiber ring laser with a semiconductor optical amplifier as the gain medium, and an in-loop electro-optical modulator. This system operates as a switchable active (pulsed) mode-locked laser. The operation principle of the system is explained theoretically and validated experimentally. The ability of the system to interrogate an array of different FBGs in wavelength and spatial domain is demonstrated. Simultaneously, the influence of several important parameters on the performance of the interrogation technique has been investigated. Specifically, the effects of the bandwidth and the reflectivity of the FBGs, the SOA gain, and the depth of the intensity modulation have been addressed.

  14. A SESAM passively mode-locked fiber laser with a long cavity including a band pass filter

    International Nuclear Information System (INIS)

    Song, Rui; Chen, Hong-Wei; Chen, Sheng-Ping; Hou, Jing; Lu, Qi-Sheng

    2011-01-01

    A semiconductor saturable absorber mirror (SESAM) passively mode-locked fiber laser with a long cavity length over 700 m is demonstrated. A band pass filter is inserted into the laser cavity to stabilize the lasing wavelength. Some interesting phenomena are observed and discussed. The central wavelength, repetition rate, average power and single pulse energy of the laser are 1064 nm, 281.5 kHz, 11 mW and 39 nJ, respectively. The laser operates stably without Q-switching instabilities, which greatly reduces the damage opportunities of the SESAM

  15. Fourier Domain Mode Locking (FDML): A new laser operating regime and applications for optical coherence tomography.

    Science.gov (United States)

    Huber, R; Wojtkowski, M; Fujimoto, J G

    2006-04-17

    We demonstrate a new technique for frequency-swept laser operation--Fourier domain mode locking (FDML)--and its application for swept-source optical coherence tomography (OCT) imaging. FDML is analogous to active laser mode locking for short pulse generation, except that the spectrum rather than the amplitude of the light field is modulated. High-speed, narrowband optical frequency sweeps are generated with a repetition period equal to the fundamental or a harmonic of cavity round-trip time. An FDML laser is constructed using a long fiber ring cavity, a semiconductor optical amplifier, and a tunable fiber Fabry-Perot filter. Effective sweep rates of up to 290 kHz are demonstrated with a 105 nm tuning range at 1300 nm center wavelength. The average output power is 3mW directly from the laser and 20 mW after post-amplification. Using the FDML laser for swept-source OCT, sensitivities of 108 dB are achieved and dynamic linewidths are narrow enough to enable imaging over a 7 mm depth with only a 7.5 dB decrease in sensitivity. We demonstrate swept-source OCT imaging with acquisition rates of up to 232,000 axial scans per second. This corresponds to 906 frames/second with 256 transverse pixel images, and 3.5 volumes/second with a 256x128x256 voxel element 3-DOCT data set. The FDML laser is ideal for swept-source OCT imaging, thus enabling high imaging speeds and large imaging depths.

  16. Towards low timing phase noise operation in fiber lasers mode locked by graphene oxide and carbon nanotubes at 1.5 µm.

    Science.gov (United States)

    Wu, Kan; Li, Xiaohui; Wang, Yonggang; Wang, Qi Jie; Shum, Perry Ping; Chen, Jianping

    2015-01-12

    We investigate the timing phase noise of fiber lasers mode locked by graphene oxide (GO) and carbon nanotubes (CNTs), respectively, integrated in a linear cavity fiber laser in the reflecting operation. Due to the shorter decay time of the GO and CNTs, weaker slow saturable absorber effects are expected and mode-locked lasers based on these two saturable absorbers exhibit low excess timing phase noise coupled from the laser intensity noise. Compared with a reference laser mode locked by semiconductor saturable absorber mirror (SESAM), GO based laser obtains a timing phase noise reduction of 7 dB at 1 kHz and a timing jitter reduction of 45% experimentally whereas CNTs based laser obtains a timing phase noise reduction of 3 dB and a timing jitter reduction of 29%. This finding suggests that saturable absorbers with short decay time have the potential for achieving mode locking operation with low timing phase noise, which is important for applications including frequency metrology, high-precision optical sampling, clock distribution and optical sensing.

  17. Anapole nanolasers for mode-locking and ultrafast pulse generation

    KAUST Repository

    Gongora, J. S. Totero

    2017-05-31

    Nanophotonics is a rapidly developing field of research with many suggestions for a design of nanoantennas, sensors and miniature metadevices. Despite many proposals for passive nanophotonic devices, the efficient coupling of light to nanoscale optical structures remains a major challenge. In this article, we propose a nanoscale laser based on a tightly confined anapole mode. By harnessing the non-radiating nature of the anapole state, we show how to engineer nanolasers based on InGaAs nanodisks as on-chip sources with unique optical properties. Leveraging on the near-field character of anapole modes, we demonstrate a spontaneously polarized nanolaser able to couple light into waveguide channels with four orders of magnitude intensity than classical nanolasers, as well as the generation of ultrafast (of 100 fs) pulses via spontaneous mode locking of several anapoles. Anapole nanolasers offer an attractive platform for monolithically integrated, silicon photonics sources for advanced and efficient nanoscale circuitry.

  18. Independent tunability of the double-mode-locked cw dye laser.

    LENUS (Irish Health Repository)

    Bourkoff, E

    1979-06-01

    We report a new configuration that enables the double-mode-locked cw dye laser to be independently tunable. In addition, the output coupling at each of the two wavelengths can be independently specified. A series of oscillographs shows some interesting features unique to double mode locking and also shows the effects of varying the two cavity lengths with respect to each other.

  19. Comparison of the noise performance of 10GHz QW and QD mode-locked laser diodes

    DEFF Research Database (Denmark)

    Carpintero, Guillermo; Thompson, Mark G.; Yvind, Kresten

    2010-01-01

    This paper reports the experimental characterization of the noise performance of a quantum dot and a quantum well 10GHz passive mode locked laser diodes.......This paper reports the experimental characterization of the noise performance of a quantum dot and a quantum well 10GHz passive mode locked laser diodes....

  20. Modeling of mode-locked coupled-resonator optical waveguide lasers

    DEFF Research Database (Denmark)

    Agger, Christian; Skovgård, Troels Suhr; Gregersen, Niels

    2010-01-01

    Coupled-resonator optical waveguides made from coupled high-Q photonic crystal nanocavities are investigated for use as cavities in mode-locked lasers. Such devices show great potential in slowing down light and can serve to reduce the cavity length of a mode-locked laser. An explicit expression...

  1. Breath analysis using external cavity diode lasers: a review

    Science.gov (United States)

    Bayrakli, Ismail

    2017-04-01

    Most techniques that are used for diagnosis and therapy of diseases are invasive. Reliable noninvasive methods are always needed for the comfort of patients. Owing to its noninvasiveness, ease of use, and easy repeatability, exhaled breath analysis is a very good candidate for this purpose. Breath analysis can be performed using different techniques, such as gas chromatography mass spectrometry (MS), proton transfer reaction-MS, and selected ion flow tube-MS. However, these devices are bulky and require complicated procedures for sample collection and preconcentration. Therefore, these are not practical for routine applications in hospitals. Laser-based techniques with small size, robustness, low cost, low response time, accuracy, precision, high sensitivity, selectivity, low detection limit, real-time, and point-of-care detection have a great potential for routine use in hospitals. In this review paper, the recent advances in the fields of external cavity lasers and breath analysis for detection of diseases are presented.

  2. Fast wavelength tuning techniques for external cavity lasers

    Science.gov (United States)

    Wysocki, Gerard [Princeton, NJ; Tittel, Frank K [Houston, TX

    2011-01-11

    An apparatus comprising a laser source configured to emit a light beam along a first path, an optical beam steering component configured to steer the light beam from the first path to a second path at an angle to the first path, and a diffraction grating configured to reflect back at least a portion of the light beam along the second path, wherein the angle determines an external cavity length. Included is an apparatus comprising a laser source configured to emit a light beam along a first path, a beam steering component configured to redirect the light beam to a second path at an angle to the first path, wherein the optical beam steering component is configured to change the angle at a rate of at least about one Kilohertz, and a diffraction grating configured to reflect back at least a portion of the light beam along the second path.

  3. Characteristics of the Single-Longitudinal-Mode Planar-Waveguide External Cavity Diode Laser at 1064 nm

    Science.gov (United States)

    Numata, Kenji; Alalusi, Mazin; Stolpner, Lew; Margaritis, Georgios; Camp, Jordan; Krainak, Michael

    2014-01-01

    We describe the characteristics of the planar-waveguide external cavity diode laser (PW-ECL). To the best of our knowledge, it is the first butterfly-packaged 1064 nm semiconductor laser that is stable enough to be locked to an external frequency reference. We evaluated its performance from the viewpoint of precision experiments. Using a hyperfine absorption line of iodine, we suppressed its frequency noise by a factor of up to 104 at 10 mHz. The PWECL's compactness and low cost make it a candidate to replace traditional Nd:YAG nonplanar ring oscillators and fiber lasers in applications that require a single longitudinal mode.

  4. Compact mode-locked diode laser system for high precision frequency comparisons in microgravity

    Science.gov (United States)

    Christopher, H.; Kovalchuk, E. V.; Wicht, A.; Erbert, G.; Tränkle, G.; Peters, A.

    2017-11-01

    Nowadays cold atom-based quantum sensors such as atom interferometers start leaving optical labs to put e.g. fundamental physics under test in space. One of such intriguing applications is the test of the Weak Equivalence Principle, the Universality of Free Fall (UFF), using different quantum objects such as rubidium (Rb) and potassium (K) ultra-cold quantum gases. The corresponding atom interferometers are implemented with light pulses from narrow linewidth lasers emitting near 767 nm (K) and 780 nm (Rb). To determine any relative acceleration of the K and Rb quantum ensembles during free fall, the frequency difference between the K and Rb lasers has to be measured very accurately by means of an optical frequency comb. Micro-gravity applications not only require good electro-optical characteristics but are also stringent in their demand for compactness, robustness and efficiency. For frequency comparison experiments the rather complex fiber laser-based frequency comb system may be replaced by one semiconductor laser chip and some passive components. Here we present an important step towards this direction, i.e. we report on the development of a compact mode-locked diode laser system designed to generate a highly stable frequency comb in the wavelength range of 780 nm.

  5. CsPbBr3 nanocrystal saturable absorber for mode-locking ytterbium fiber laser

    Science.gov (United States)

    Zhou, Yan; Hu, Zhiping; Li, Yue; Xu, Jianqiu; Tang, Xiaosheng; Tang, Yulong

    2016-06-01

    Cesium lead halide perovskite nanocrystals (CsPbX3, X = Cl, Br, I) have been reported as efficient light-harvesting and light-emitting semiconductor materials, but their nonlinear optical properties have been seldom touched upon. In this paper, we prepare layered CsPbBr3 nanocrystal films and characterize their physical properties. Broadband linear absorption from ˜0.8 to over 2.2 μm and nonlinear optical absorption at the 1-μm wavelength region are measured. The CsPbBr3 saturable absorber (SA), manufactured by drop-casting of colloidal CsPbBr3 liquid solution on a gold mirror, shows modulation depth and saturation intensity of 13.1% and 10.7 MW/cm2, respectively. With this SA, mode-locking operation of a polarization-maintained ytterbium fiber laser produces single pulses with duration of ˜216 ps, maximum average output power of 10.5 mW, and the laser spectrum is centered at ˜1076 nm. This work shows that CsPbBr3 films can be efficient SA candidates for fiber lasers and also have great potential to become broadband linear and nonlinear optical materials for photonics and optoelectronics.

  6. High-repetition-rate ultrashort pulsed fiber ring laser using hybrid mode locking.

    Science.gov (United States)

    Zhang, Xiang; Hu, Hongyu; Li, Wenbo; Dutta, Niloy K

    2016-10-01

    We propose and demonstrate a hybrid mode-locked erbium-doped fiber ring laser by combining the rational harmonic mode-locking technique and passive mode locking based on nonlinear polarization rotation in a highly nonlinear photonic crystal fiber. By carefully adjusting the modulation frequency and the polarization controllers in the cavity, a 30 GHz pulse train with improved stability and narrower pulse width is generated. The pulse width at 30 GHz using rational harmonic mode locking alone is 5.8 ps. This hybrid scheme narrows the pulse width to 1.9 ps at the repetition rate of 30 GHz. Numerical simulations are carried out that show good agreement with the experimental results.

  7. Modelling and characterization of colliding-pulse mode-locked (CPM) quantum well lasers. [MPS1

    DEFF Research Database (Denmark)

    Bischoff, Svend; Brorson, S.D.; Franck, T.

    1996-01-01

    A theoretical and experimental study of passive colliding pulse mode-locked quantum well lasers is presented. The theoretical model for the gain dynamics is based on semi-classical density matrixequations. The gain dynamics are characterized exp...

  8. Mode-locked terahertz quantum cascade laser by direct phase synchronization

    International Nuclear Information System (INIS)

    Maussang, K.; Maysonnave, J.; Jukam, N.; Freeman, J. R.; Cavalié, P.; Dhillon, S. S.; Tignon, J.; Khanna, S. P.; Linfield, E. H.; Davies, A. G.; Beere, H. E.; Ritchie, D. A.

    2013-01-01

    Mode-locking of a terahertz quantum cascade laser is achieved using multimode injection seeding. Contrary to standard methods that rely on gain modulation, here a fixed phase relationship is directly imprinted to the laser modes. In this work, we demonstrate the generation of 9 ps phase mode-locked pulses around 2.75 THz. A direct measurement of the emitted field phase shows that it results from the phase of the initial injection

  9. Fast tunable blazed MEMS grating for external cavity lasers

    Science.gov (United States)

    Tormen, Maurizio; Niedermann, Philippe; Hoogerwerf, Arno; Shea, Herbert; Stanley, Ross

    2017-11-01

    Diffractive MEMS are interesting for a wide range of applications, including displays, scanners or switching elements. Their advantages are compactness, potentially high actuation speed and in the ability to deflect light at large angles. We have designed and fabricated deformable diffractive MEMS grating to be used as tuning elements for external cavity lasers. The resulting device is compact, has wide tunability and a high operating speed. The initial design is a planar grating where the beams are free-standing and attached to each other using leaf springs. Actuation is achieved through two electrostatic comb drives at either end of the grating. To prevent deformation of the free-standing grating, the device is 10 μm thick made from a Silicon on Insulator (SOI) wafer in a single mask process. At 100V a periodicity tuning of 3% has been measured. The first resonant mode of the grating is measured at 13.8 kHz, allowing high speed actuation. This combination of wide tunability and high operating speed represents state of the art in the domain of tunable MEMS filters. In order to improve diffraction efficiency and to expand the usable wavelength range, a blazed version of the deformable MEMS grating has been designed. A key issue is maintaining the mechanical properties of the original device while providing optically smooth blazed beams. Using a process based on anisotropic KOH etching, blazed gratings have been obtained and preliminary characterization is promising.

  10. Delay induced high order locking effects in semiconductor lasers

    Science.gov (United States)

    Kelleher, B.; Wishon, M. J.; Locquet, A.; Goulding, D.; Tykalewicz, B.; Huyet, G.; Viktorov, E. A.

    2017-11-01

    Multiple time scales appear in many nonlinear dynamical systems. Semiconductor lasers, in particular, provide a fertile testing ground for multiple time scale dynamics. For solitary semiconductor lasers, the two fundamental time scales are the cavity repetition rate and the relaxation oscillation frequency which is a characteristic of the field-matter interaction in the cavity. Typically, these two time scales are of very different orders, and mutual resonances do not occur. Optical feedback endows the system with a third time scale: the external cavity repetition rate. This is typically much longer than the device cavity repetition rate and suggests the possibility of resonances with the relaxation oscillations. We show that for lasers with highly damped relaxation oscillations, such resonances can be obtained and lead to spontaneous mode-locking. Two different laser types-—a quantum dot based device and a quantum well based device—are analysed experimentally yielding qualitatively identical dynamics. A rate equation model is also employed showing an excellent agreement with the experimental results.

  11. Low-timing-jitter, stretched-pulse passively mode-locked fiber laser with tunable repetition rate and high operation stability

    International Nuclear Information System (INIS)

    Liu, Yuanshan; Zhang, Jian-Guo; Chen, Guofu; Zhao, Wei; Bai, Jing

    2010-01-01

    We design a low-timing-jitter, repetition-rate-tunable, stretched-pulse passively mode-locked fiber laser by using a nonlinear amplifying loop mirror (NALM), a semiconductor saturable absorber mirror (SESAM), and a tunable optical delay line in the laser configuration. Low-timing-jitter optical pulses are stably produced when a SESAM and a 0.16 m dispersion compensation fiber are employed in the laser cavity. By inserting a tunable optical delay line between NALM and SESAM, the variable repetition-rate operation of a self-starting, passively mode-locked fiber laser is successfully demonstrated over a range from 49.65 to 50.47 MHz. The experimental results show that the newly designed fiber laser can maintain the mode locking at the pumping power of 160 mW to stably generate periodic optical pulses with width less than 170 fs and timing jitter lower than 75 fs in the 1.55 µm wavelength region, when the fundamental repetition rate of the laser is continuously tuned between 49.65 and 50.47 MHz. Moreover, this fiber laser has a feature of turn-key operation with high repeatability of its fundamental repetition rate in practice

  12. Modeling and characterization of pulse shape and pulse train dynamics in two-section passively mode-locked quantum dot lasers

    Science.gov (United States)

    Raghunathan, R.; Mee, J. K.; Crowley, M. T.; Grillot, F.; Kovanis, V.; Lester, L. F.

    2013-03-01

    A nonlinear delay differential equation model for passive mode-locking in semiconductor lasers, seeded with parameters extracted from the gain and loss spectra of a quantum dot laser, is employed to simulate and study the dynamical regimes of mode-locked operation of the device. The model parameter ranges corresponding to these regimes are then mapped to externally-controllable parameters such as gain current and absorber bias voltage. Using this approach, a map indicating the approximate regions corresponding to fundamental and harmonically mode locked operation is constructed as a function of gain current and absorber bias voltage. This is shown to be a highly useful method of getting a sense of the highest repetition rates achievable in principle with a simple, two-section device, and provides a guideline toward achieving higher repetition rates by simply adjusting external biasing conditions instantaneously while the device is in operation, as opposed to re-engineering the device with additional passive or saturable absorber sections. The general approach could potentially aid the development of numerical modeling techniques aimed at providing a systematic guideline geared toward developing microwave and RF photonic sources for THz applications.

  13. High power and widely tunable Si hybrid external-cavity laser for power efficient Si photonics WDM links.

    Science.gov (United States)

    Lee, Jin Hyoung; Shubin, Ivan; Yao, Jin; Bickford, Justin; Luo, Ying; Lin, Shiyun; Djordjevic, Stevan S; Thacker, Hiren D; Cunningham, John E; Raj, Kannan; Zheng, Xuezhe; Krishnamoorthy, Ashok V

    2014-04-07

    A highly efficient silicon (Si) hybrid external cavity laser with a wavelength tunable ring reflector is fabricated on a complementary metal-oxide semiconductor (CMOS)-compatible Si-on-insulator (SOI) platform and experimental results with high output power are demonstrated. A III-V semiconductor gain chip is edge-coupled into a SOI cavity chip through a SiN(x) spot size converter and Si grating couplers are incorporated to enable wafer-scale characterization. The laser output power reaches 20 mW and the highest wall-plug efficiency of 7.8% is measured at 17.3 mW in un-cooled condition. The laser wavelength tuning ranges are 8 nm for the single ring reflector cavity and 35 nm for the vernier ring reflector cavity, respectively. The Si hybrid laser is a promising light source for energy-efficient Si CMOS photonic links.

  14. Directly phase-modulation-mode-locked doubly-resonant optical parametric oscillator.

    Science.gov (United States)

    Devi, Kavita; Kumar, S Chaitanya; Ebrahim-Zadeh, M

    2013-10-07

    We present results on direct mode-locking of a doubly-resonant optical parametric oscillator (DRO) using an electro-optic phase modulator with low resonant frequency of 80 MHz as the single mode-locking element. Pumped by a cw laser at 532 nm and based on MgO:sPPLT as the nonlinear material, the DRO generates 533 ps pulses at 80 MHz and 471 ps pulses at 160 MHz. Stable train of mode-locked pulses is obtained at a modulation depth of 1.83 radians when the modulation frequency is precisely tuned and the cavity length is carefully adjusted. The effects of frequency detuning, modulation depth, input laser pump power, crystal temperature and position of modulator inside the cavity, on pulse duration and repetition rate have been studied. Operating at degeneracy, under mode-locked condition, the signal-idler spectrum exhibits a bandwidth of ~31 nm, and the spectrum has been investigated for different phase-matching temperatures. Mode-locked operation has been confirmed by second-harmonic-generation of the DRO output in a β-BaB₂O₄ crystal, where a 4 times enhancement in green power is observed compared to cw operation.

  15. Quasi-continuously pumped passively mode-locked 2.4% doped Nd:YAG oscillator-amplifier system in a bounce geometry

    Science.gov (United States)

    Jelínek, Michal; Kubecek, Vaclav; Cech, Miroslav; Hirsl, Petr

    2010-02-01

    We report on oscillator-amplifier system based on two highly doped 2.4 at. % crystalline Czochralski grown Nd:YAG crystals in a diode pumped bounce geometry configuration under quasi-continuous pumping. The oscillator was passively mode-locked by the semiconductor saturable absorber in transmission mode. The output pulse train consisted of 5 pulses with total energy of 270 μJ and pulse duration of 75 ps. The output train from the oscillator was amplified to the energy of 1 mJ by single pass amplifier.

  16. Mode locked Nd3+ and Gd3+ co-doped calcium fluoride crystal laser at dual gain lines

    Science.gov (United States)

    Zhang, Feng; Wu, Yongjing; Liu, Jie; Pang, Siyuan; Ma, Fengkai; Jiang, Dapeng; Wu, Qinghui; Su, Liangbi

    2018-03-01

    Based on a novel disordered fluoride crystal-Nd3+ and Gd3+ co-doped CaF2, we demonstrate a dual-wavelength synchronously mode locked laser in a single cavity, for the first time. Two gain lines at 1064.2 nm and 1064.7 nm were synchronously mode locked by gain spectrum splitting method, corresponding to a 0.15 THz repetition rate. The mode locked laser shows a 6.5 ps separated pulse duration.

  17. Soliton generation from a fundamentally mode-locked fiber laser with a feed-forward path

    Science.gov (United States)

    Wang, Ruixin; Dai, Yitang; Yin, Feifei; Xu, Kun; Li, Jianqiang; Lin, Jintong

    2014-08-01

    We demonstrate for the first time to our knowledge, the soliton generation from a mode-locked erbium-doped fiber laser using a novel saturable absorber (SA), which is realized by combining a dual-drive modulator and an intensity feed-forward path. The laser is fundamentally mode-locked under high-frequency RF signal modulation. Experimentally, the actively mode-locked laser produces a 16.7 MHz repetition rate pulse train with a 1.4 ps pulse width, and the spectrum bandwidth is 2.17 nm. The results demonstrate that the SA supports soliton pulse shaping in the cavity at the fundamental frequency.

  18. The Proper Orthogonal Decomposition for Dimensionality Reduction in Mode-Locked Lasers and Optical Systems

    Directory of Open Access Journals (Sweden)

    Eli Shlizerman

    2012-01-01

    energy delivered per pulse. Managing the nonlinear penalties in the cavity becomes crucial for increasing the energy and suppressing the multipulsing instability. A proper orthogonal decomposition (POD allows for the reduction of governing equations of a mode-locked laser onto a low-dimensional space. The resulting reduced system is able to capture correctly the experimentally observed pulse transitions. Analysis of these models is used to explain the sequence of bifurcations that are responsible for the multipulsing instability in the master mode-locking and the waveguide array mode-locking models. As a result, the POD reduction allows for a simple and efficient way to characterize and optimize the cavity parameters for achieving maximal energy output.

  19. Multiwavelength mode-locked cylindrical vector beam fiber laser based on mode selective coupler

    Science.gov (United States)

    Huang, Ping; Cai, Yu; Zhang, Zuxing

    2017-10-01

    We propose and demonstrate a multiwavelength mode-locked fiber laser with cylindrical vector beam generation for the first time, to the best of our knowledge. The mode-locking mechanism is nonlinear polarization rotation, and the multiwavelength operation is contributed to the in-line birefringence fiber filter with periodic multiple passbands formed by incorporating a section of polarization maintaining fiber into the laser cavity with a polarizer. Furthermore, using the mode selective coupler, which acts as mode converter from fundamental mode to higher-order mode, multiwavelength mode-locked cylindrical vector beams have been obtained, which may have potential applications in mode-division multiplexing optical fiber communication and material processing.

  20. Harmonic Mode-Locked Fiber Laser based on Photonic Crystal Fiber Filled with Topological Insulator Solution

    Directory of Open Access Journals (Sweden)

    Yu-Shan Chen

    2015-04-01

    Full Text Available We reported that the photonic crystal fiber (PCF filled with TI:Bi2Te3 nanosheets solution could act as an effective saturable absorber (SA. Employing this TI-PCF SA device; we constructed an ytterbium-doped all-fiber laser oscillator and achieved the evanescent wave mode-locking operation. Due to the large cavity dispersion; the fundamental mode-locking pulse had the large full width at half maximum (FWHM of 2.33 ns with the repetition rate of ~1.11 MHz; and the radio frequency (RF spectrum with signal-to-noise ratio (SNR of 61 dB. In addition; the transition dynamics from a bunched state of pulses to harmonic mode-locking (HML was also observed; which was up to 26th order.

  1. Deep learning and model predictive control for self-tuning mode-locked lasers

    Science.gov (United States)

    Baumeister, Thomas; Brunton, Steven L.; Nathan Kutz, J.

    2018-03-01

    Self-tuning optical systems are of growing importance in technological applications such as mode-locked fiber lasers. Such self-tuning paradigms require {\\em intelligent} algorithms capable of inferring approximate models of the underlying physics and discovering appropriate control laws in order to maintain robust performance for a given objective. In this work, we demonstrate the first integration of a {\\em deep learning} (DL) architecture with {\\em model predictive control} (MPC) in order to self-tune a mode-locked fiber laser. Not only can our DL-MPC algorithmic architecture approximate the unknown fiber birefringence, it also builds a dynamical model of the laser and appropriate control law for maintaining robust, high-energy pulses despite a stochastically drifting birefringence. We demonstrate the effectiveness of this method on a fiber laser which is mode-locked by nonlinear polarization rotation. The method advocated can be broadly applied to a variety of optical systems that require robust controllers.

  2. Low jitter and high power all-active mode-locked lasers

    DEFF Research Database (Denmark)

    Yvind, Kresten; Larsson, David; Christiansen, Lotte Jin

    2003-01-01

    A novel epitaxial design leading to low loss and low gain saturation improves the properties of 40 GHz mode-locked lasers. We obtain 2.8 ps nearly chirp free pulses with 228 fs jitter and -coupled power of 7 mW.......A novel epitaxial design leading to low loss and low gain saturation improves the properties of 40 GHz mode-locked lasers. We obtain 2.8 ps nearly chirp free pulses with 228 fs jitter and -coupled power of 7 mW....

  3. Low jitter and high power all-active mode-locked lasers

    DEFF Research Database (Denmark)

    Yvind, Kresten; Larsson, David; Christiansen, Lotte Jin

    2003-01-01

    A novel epitaxial design leading to low loss and low gain saturation improves the properties of 40 GHz mode-locked lasers. We obtain 2.8 ps nearly chirp free pulses with 228 fs jitter and fiber-coupled power of 7 mW.......A novel epitaxial design leading to low loss and low gain saturation improves the properties of 40 GHz mode-locked lasers. We obtain 2.8 ps nearly chirp free pulses with 228 fs jitter and fiber-coupled power of 7 mW....

  4. Linearly Polarized Dual-Wavelength Vertical-External-Cavity Surface-Emitting Laser (Postprint)

    National Research Council Canada - National Science Library

    Fan, Li; Fallahi, Mahmoud; Hader, Joerg; Zakharian, Aramais R; Moloney, Jerome V; Stolz, Wolfgang; Koch, Stephan W; Bedford, Robert; Murray, James T

    2007-01-01

    The authors demonstrate the multiwatt linearly polarized dual-wavelength operation in an optically pumped vertical-external-cavity surface-emitting laser by means of an intracavity tilted Fabry-Perot...

  5. Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

    Science.gov (United States)

    Fill, Matthias; Debernardi, Pierluigi; Felder, Ferdinand; Zogg, Hans

    2013-11-01

    Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

  6. Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

    Energy Technology Data Exchange (ETDEWEB)

    Fill, Matthias [ETH Zurich, Laser Spectroscopy and Sensing Lab, 8093 Zurich (Switzerland); Phocone AG, 8005 Zurich (Switzerland); Debernardi, Pierluigi [IEIIT-CNR, Torino 10129 (Italy); Felder, Ferdinand [Phocone AG, 8005 Zurich (Switzerland); Zogg, Hans [ETH Zurich (Switzerland)

    2013-11-11

    Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

  7. High peak power sub-nanosecond mode-locked pulse characteristics of Nd:GGG laser

    Science.gov (United States)

    Zhao, Jia; Zhao, Shengzhi; Li, Tao; Li, Yufei; Yang, Kejian; Li, Guiqiu; Li, Dechun; Qiao, Wenchao; Feng, Chuansheng; Wang, Yonggang

    2015-10-01

    Based on the dual-loss modulation, i.e. electro-optic (EO) modulator and GaAs saturable absorber, a sub-nanosecond mode-locked pulsed Nd:GGG laser with kHz repetition rates is presented for the first time. The repetition rate (0.5-10 kHz) of this pulsed laser is controlled by the modulation rate of EO modulator, so high stability can be obtained. The sub-nanosecond pulse width depends on the mode-locked pulse underneath the Q-switched envelope in the Q-switched mode-locked (QML) laser and high peak power can be generated. The condition on the generation of sub-nanosecond pulse and the needed threshold power for different modulation rates of EO are given. The average output power, the pulse width and the peak power versus pump power for different repetition rates are demonstrated. The shortest pulse width is 426 ps and the highest peak power reaches 239.4 kW. The experimental results show that the dual-loss modulation technology with EO and GaAs saturable absorber in QML laser is an efficient method to generate sub-nanosecond mode-locked pulsed laser with kHz repetition rates.

  8. Optical flip-flop: Based on two-coupled mode-locked ring lasers

    NARCIS (Netherlands)

    Tangdiongga, E.; Yang, X.X.; Li, Z.; Liu, Y.S.; Lenstra, D.; Khoe, G.D.; Dorren, H.J.S.

    2005-01-01

    We report an all-optical flip-flop that is based on two coupled actively mode-locked fiber ring lasers. The lasers are coupled so that when one of the lasers lases, it quenches lasing in the other laser. The state of the flip-flop is determined by the wavelength of the laser that is currently

  9. Three-dimensional graphene based passively mode-locked fiber laser.

    Science.gov (United States)

    Yang, Y; Loeblein, M; Tsang, S H; Chow, K K; Teo, E H T

    2014-12-15

    We present an all-fiber passively mode-locked fiber laser incorporating three-dimensional (3D) graphene as a saturable absorber (SA) for the first time to the best of our knowledge. The 3D graphene is synthesized by template-directed chemical vapor deposition (CVD). The SA is then simply formed by sandwiching the freestanding 3D graphene between two conventional fiber connectors without any deposition process. It is demonstrated that such 3D graphene based SA is capable to produce high quality mode-locked pulses. A passively mode-locked fiber laser is constructed and stable output pulses with a fundamental repetition rate of ~9.9 MHz and a pulse width of ~1 ps are generated from the fiber laser. The average output power of the laser is ~10.5 mW while the output pulse is operating at single pulse region. The results imply that the freestanding 3D graphene can be applied as an effective saturable absorption material for passively mode-locked lasers.

  10. Flexible picosecond thulium-doped fiber laser using the active mode-locking technique.

    Science.gov (United States)

    Yin, Ke; Zhang, Bin; Yang, Weiqiang; Chen, He; Chen, Shengping; Hou, Jing

    2014-07-15

    An all-fiber actively mode-locked thulium-doped fiber laser (AML-TDFL) based on a 10 GHz bandwidth electro-optic intensity modulator (EOM) providing flexible picosecond pulses at 1980 nm is presented. The EOM is driven by electrical pulses rather than traditional sine-wave signals. The repetition rate of output pulses was 21.4 MHz at fundamental mode-locking, which could be scaled up to 1.498 GHz through the 70th order harmonic mode-locking, and the shortest measured output pulse width was 38 ps. Furthermore, the output pulse width could be tuned by either adjusting the modulation frequency with small detuning or changing the width of these driving electrical pulses without frequency detuning. In our work, the stability of these mode-locked pulses obtained from the AML-TDFL was superior; for instance, the measured supermode suppression ratio of 1.498 GHz pulses train was up to 48 dB.

  11. Effect of periodic optical pumping on dynamics of passive mode-locked fiber laser

    Science.gov (United States)

    Lee, Chung Ghiu; Kim, Joonyoung; Kim, Soeun

    2017-10-01

    We report on the effect of periodic optical pumping on a passively mode-locked fiber laser (MLFL) based on an erbium-doped fiber (EDF). We investigate the influence of various parameters (including average pump power into the fiber laser, the modulation frequency and duty cycle of the pump, and the polarization state of the light inside the cavity) on the transient response characteristic of the MLFL such as: relaxation oscillation (RO) build-up time (defined as the time delay from the onset of pumping to the generation of passively mode-locked pulses) and the power of the detected RF signal at the fundamental cavity-mode frequency (determined by the ring cavity length), which reflects the stability of mode-locking pulse train. We have found that the RO build-up time is inversely proportional to the average pump power while the RF power of the detected fundamental cavity mode (produced by the ring cavity) is proportional to the average pump power. A change in the duty cycle effectively leads the average pump power to vary, which in turn leads to changes in the transient response. The modulation frequency of the pump is rather related to the stability of the MLFL than its response time. Generally, the lower the modulation frequency, the more stable the mode-locked pulses generated in the fiber laser. Finally, the RO build-up time and, consequently, the pulse-generation time are highly sensitive to the state of polarization in the MLFL cavity.

  12. On the jitter of mode-locked pulses introduced by an optical fibre

    NARCIS (Netherlands)

    Mols, R.F.X.A.M.; Mols, R.F.X.A.M.; Ernst, G.J.

    1993-01-01

    Measurements on the jitter of mode-locked pulses of a Nd:YLF laser after travelling through an optical fibre are presented. For low powers self phase modulation occurs which leaves the jitter unaltered. For powers higher than the threshold of stimulated Raman scattering the jitter increases due to

  13. All-fiber Ho-doped mode-locked oscillator based on a graphene saturable absorber

    Czech Academy of Sciences Publication Activity Database

    Sotor, J.; Pawliszewska, M.; Sobon, G.; Kaczmarek, P.; Przewolka, A.; Pasternak, I.; Cajzl, Jakub; Peterka, Pavel; Honzátko, Pavel; Kašík, Ivan; Strupinski, W.; Abramski, K.

    2016-01-01

    Roč. 41, č. 11 (2016), s. 2592-2595 ISSN 0146-9592 R&D Projects: GA ČR GA14-35256S; GA MŠk(CZ) LD15122 Institutional support: RVO:67985882 Keywords : Fiber lasers * Graphene * Mode-locked oscillators Subject RIV: BH - Optics , Masers, Lasers Impact factor: 3.416, year: 2016

  14. Effects of resonator input power on Kerr lens mode-locked lasers

    Indian Academy of Sciences (India)

    Abstract. Using the ABCD matrix method, the common stability region between the sagittal and tangential planes of a four-mirror Kerr lens mode-locked (KLM) laser cavity is obtained for different ranges of input power. In addition, the effect of the input power on the Kerr lens sensitivity is investigated. Optimal input power and ...

  15. 10-GHz 1.59-μm quantum dash passively mode-locked two-section lasers

    DEFF Research Database (Denmark)

    Dontabactouny, Madhoussoudhana; Rosenberg, C.; Semenova, Elizaveta

    2010-01-01

    This paper reports the fabrication and the characterisation of a 10 GHz two-section passively mode-locked quantum dash laser emitting at 1.59 μm. The potential of the device's mode-locking is investigated through an analytical model taking into account both the material parameters and the laser...

  16. Systematic investigation of the temperature behavior of InAs/InP quantum nanostructure passively mode-locked lasers

    DEFF Research Database (Denmark)

    Klaime, K.; Piron, R.; Grillot, F.

    2013-01-01

    for the first time a systematic investigation of the temperature-dependence on the mode-locking properties of InAs/InP QN devices. Beside, a rigorous comparison between QDashes and QDs temperature dependence is proposed through a proper analysis of the mode-locking stability maps. Experimental results also show...

  17. Multiphoton microscopy in every lab: the promise of ultrafast semiconductor disk lasers

    Science.gov (United States)

    Emaury, Florian; Voigt, Fabian F.; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M.; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula

    2017-07-01

    We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging.

  18. Dual-wavelength high-power diode laser system based on an external-cavity tapered amplifier with tunable frequency difference

    DEFF Research Database (Denmark)

    Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

    2012-01-01

    knowledge, this is the broadest tuning range of the frequency difference from a dual-wavelength diode laser system. The spectrum, output power, and beam quality of the diode laser system are characterized. The power stability of each wavelength is measured, and the power fluctuations of the two wavelengths......A dual-wavelength high-power semiconductor laser system based on a tapered amplifier with double-Littrow external cavity is demonstrated around 800 nm. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 10.0 THz. To our...

  19. Spectral properties of a broad-area diode laser with off-axis external-cavity feedback

    DEFF Research Database (Denmark)

    Chi, Mingjun; Petersen, Paul Michael

    2013-01-01

    . The intensity noise spectrum of the diode laser shows that the intensity noise is increased strongly by the external-cavity feedback. External-cavity modes are excited in the external cavity even in the off-axis configuration. The peak spacing of the intensity noise spectrum shows that single roundtrip external......Spectral properties, both the optical spectrum and the intensity noise spectrum, of a broad-area diode laser with off-axis external-cavity feedback are presented. We show that the optical spectrum of the diode laser system is shifted to longer wavelengths due to the external-cavity feedback......-cavity modes are excited. We believe that the four-wave mixing process in the broad-area diode laser is responsible for the establishment of the external-cavity mode....

  20. Tunable high-power narrow-linewidth green external-cavity GaN diode laser

    DEFF Research Database (Denmark)

    Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

    2016-01-01

    A tunable high-power green external-cavity diode laser is demonstrated. Up to 290 mW output power and a 9.2 nm tuning is achieve. This constitutes the highest output power from a tunable green diode laser system.......A tunable high-power green external-cavity diode laser is demonstrated. Up to 290 mW output power and a 9.2 nm tuning is achieve. This constitutes the highest output power from a tunable green diode laser system....

  1. Mid-infrared mode-locked pulse generation with multilayer black phosphorus as saturable absorber.

    Science.gov (United States)

    Qin, Zhipeng; Xie, Guoqiang; Zhao, Chujun; Wen, Shuangchun; Yuan, Peng; Qian, Liejia

    2016-01-01

    A mid-infrared saturable absorber mirror is successfully fabricated by transferring the mechanically exfoliated black phosphorus onto the gold-coated mirror. With the as-prepared black phosphorus saturable absorber mirror, a continuous-wave passively mode-locked Er:ZBLAN fiber laser is demonstrated at the wavelength of 2.8 μm, which delivers a maximum average output power of 613 mW, a repetition rate of 24 MHz, and a pulse duration of 42 ps. To the best of our knowledge, this is the first time a black phosphorus mode-locked laser at 2.8 μm wavelength has been demonstrated. Our results demonstrate the feasibility of black phosphorus flake as a new two-dimensional material for application in mid-infrared ultrafast photonics.

  2. Passively mode-locked Nd:YVO4 laser operating at 1073 nm and 1085 nm

    Science.gov (United States)

    Waritanant, Tanant; Major, Arkady

    2018-02-01

    A passively mode-locked Nd:YVO4 laser operating at 1073 nm and 1085 nm was demonstrated with an intracavity birefringent filter as the wavelength selecting element. The average output powers achieved were 2.17 W and 2.18 W with optical-to-optical efficiency of 19.6% and 19.7%, respectively. The slope efficiencies were more than 31% at both output wavelengths. The pulse durations at the highest average output power were 10.3 ps and 8.4 ps, respectively. We believe that this is the first report of mode locking of a Nd:YVO4 laser operating at 1073 nm or 1085 nm lines.

  3. Flat pulse-amplitude rational-harmonic-mode-locking fiber lasers with GHz pulse repetition rates

    Science.gov (United States)

    Wang, Tianhe; Yang, Tianxin; Jia, Dongfang; Wang, Zhaoying; Sang, Mei; Bai, Neng; Li, Guifang

    2013-03-01

    Rational harmonic mode locking (RHML) in an active mode-locked fiber laser can increase the output pulse repetition rate a number of times the modulation frequency of an optical modulator in a cavity when driven by gigahertz (GHz) RF. The amplitudes of the output optical pulse train in a high order RHML operation are not equalized and flat due to the GHz RF drive signals. A modified RHML technique using standard instrumentation that generates 1 GHz electrical square wave signals to accomplish up to 6th order RHML in fiber lasers is presented for improving the flatness of the amplitudes of the output optical pulse train at the pulse repetition rate of up to 12 GHz.

  4. Tungsten diselenide for mode-locked erbium-doped fiber lasers with short pulse duration

    Science.gov (United States)

    Liu, Wenjun; Liu, Mengli; OuYang, Yuyi; Hou, Huanran; Ma, Guoli; Lei, Ming; Wei, Zhiyi

    2018-04-01

    In this paper, a WSe2 film prepared by chemical vapor deposition (CVD) is transferred onto a tapered fiber, and a WSe2 saturable absorber (SA) is fabricated. In order to measure the third-order optical nonlinearity of the WSe2, the Z-scan technique is applied. The modulation depth of the WSe2 SA is measured as being 21.89%. Taking advantage of the remarkable nonlinear absorption characteristic of the WSe2 SA, a mode-locked erbium-doped fiber laser is demonstrated at 1557.4 nm with a bandwidth of 25.8 nm and signal to noise ratio of 96 dB. To the best of our knowledge, the pulse duration of 163.5 fs is confirmed to be the shortest compared with previous mode-locked fiber lasers based on transition-metal dichalcogenides SAs. These results indicate that WSe2 is a powerful competitor in the application of ultrashort pulse lasers.

  5. Quasiperiodicity, mode-locking, and universal scaling in Rayleigh-Benard convection

    International Nuclear Information System (INIS)

    Ecke, R.E.

    1990-01-01

    This major review paper describes research on a model nonlinear dynamical system of small-aspect-ratio Rayleigh-Benard convection in 3 He - 4 He mixtures. The nonlinear effects of mode locking and quasiperiodic behavior are described. Analysis techniques for characterizing the state of the dynamical system include Fourier transforms, Poincare sections, phase differences, transients, multifractal f(∝) spectra and scaling function dynamics. Theoretical results such as the fractal staircase of mode-locked intervals and the Arnold tongues are reproduced in experimental data. New techniques for analyzing scaling dynamics are developed and discussed. This is a tutorial article that introduces the major important concepts in nonlinear dynamics and focuses on experimental problems and techniques. 77 refs

  6. Dark solitons of the power-energy saturation model: application to mode-locked lasers

    International Nuclear Information System (INIS)

    Ablowitz, M J; Nixon, S D; Horikis, T P; Frantzeskakis, D J

    2013-01-01

    The generation and dynamics of dark solitons in mode-locked lasers is studied within the framework of a nonlinear Schrödinger equation which incorporates power-saturated loss, as well as energy-saturated gain and filtering. Mode-locking into single dark solitons and multiple dark pulses are found by employing different descriptions for the energy and power of the system defined over unbounded and periodic (ring laser) systems. Treating the loss, gain and filtering terms as perturbations, it is shown that these terms induce an expanding shelf around the soliton. The dark soliton dynamics are studied analytically by means of a perturbation method that takes into regard the emergence of the shelves and reveals their importance. (paper)

  7. Scalar-vector soliton fiber laser mode-locked by nonlinear polarization rotation.

    Science.gov (United States)

    Wu, Zhichao; Liu, Deming; Fu, Songnian; Li, Lei; Tang, Ming; Zhao, Luming

    2016-08-08

    We report a passively mode-locked fiber laser by nonlinear polarization rotation (NPR), where both vector and scalar soliton can co-exist within the laser cavity. The mode-locked pulse evolves as a vector soliton in the strong birefringent segment and is transformed into a regular scalar soliton after the polarizer within the laser cavity. The existence of solutions in a polarization-dependent cavity comprising a periodic combination of two distinct nonlinear waves is first demonstrated and likely to be applicable to various other nonlinear systems. For very large local birefringence, our laser approaches the operation regime of vector soliton lasers, while it approaches scalar soliton fiber lasers under the condition of very small birefringence.

  8. $CO_{2}$ laser ion source Comparison between mode-locked and free- running laser beams

    CERN Document Server

    Lisi, N; Scrivens, R

    2001-01-01

    The production of highly charged ions in a CO/sub 2/ laser-generated plasma is compared for different laser pulse-time structures. The work was performed at the CERN Laser Ion Source, which has the aim of developing a high current, high charge-state ion source for the Large Hadron Collider (LHC). When an intense laser pulse is focused onto a high-Z metal target, the ions expanding in the plasma plume are suitable for extraction from the plasma and matching into a synchrotron. For the first time, a comparison is made between free- running pulses with randomly fluctuating intensity, and mode-locked pulse trains with a reproducible structure and the same energy. Despite the lower power density with respect to the mode-locked pulse train, the free-running pulse provides higher charge states and higher yield. (10 refs).

  9. MHD stability and mode locking in pre-disruptive plasmas on TORE SUPRA

    International Nuclear Information System (INIS)

    Vallet, J.C.; Edery, D.; Joffrin, E.; Lecoustey, P.; Mohamed-Benkadda, M.S.; Pecquet, A.L.; Samain, A.; Talvard, M.

    1991-01-01

    Experiments devoted to the study of MHD activity have been carried out on TORE SUPRA. The observed disruptions are preceded by the growth of an m=2 N=1 rotating mode which locks when the magnetic field perturbation exceeds a critical value. The mode locking is interpreted as a bifurcation of the mode frequency. In addition, stabilization of the m=2 N=1 tearing mode has been obtained with the Ergodic Divertor (ED)

  10. Observation of Coexisting Dissipative Solitons in a Mode-Locked Fiber Laser.

    Science.gov (United States)

    Bao, Chengying; Chang, Wonkeun; Yang, Changxi; Akhmediev, Nail; Cundiff, Steven T

    2015-12-18

    We show, experimentally and numerically, that a mode-locked fiber laser can operate in a regime where two dissipative soliton solutions coexist and the laser will periodically switch between the solutions. The two dissipative solitons differ in their pulse energy and spectrum. The switching can be controlled by an external perturbation and triggered even when switching does not occur spontaneously. Numerical simulations unveil the importance of the double-minima loss spectrum and nonlinear gain to the switching dynamics.

  11. Universal soliton pattern formations in passively mode-locked fiber lasers.

    Science.gov (United States)

    Amrani, Foued; Salhi, Mohamed; Grelu, Philippe; Leblond, Hervé; Sanchez, François

    2011-05-01

    We investigate multiple-soliton pattern formations in a figure-of-eight passively mode-locked fiber laser. Operation in the anomalous dispersion regime with a double-clad fiber amplifier allows generation of up to several hundreds of solitons per round trip. We report the observation of remarkable soliton distributions: soliton gas, soliton liquid, soliton polycrystal, and soliton crystal, thus indicating the universality of such complexes.

  12. All-fiber nonlinearity- and dispersion-managed dissipative soliton nanotube mode-locked laser

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Z. [Department of Physics, Bilkent University, 06800 Ankara (Turkey); Nanjing University of Posts and Communications, Nanjing 210003 (China); Popa, D., E-mail: dp387@cam.ac.uk; Wittwer, V. J.; Milana, S.; Hasan, T.; Jiang, Z.; Ferrari, A. C. [Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA (United Kingdom); Ilday, F. Ö. [Department of Physics, Bilkent University, 06800 Ankara (Turkey); Department of Electrical and Electronics Engineering, Bilkent University, 06800 Ankara (Turkey)

    2015-12-14

    We report dissipative soliton generation from an Yb-doped all-fiber nonlinearity- and dispersion-managed nanotube mode-locked laser. A simple all-fiber ring cavity exploits a photonic crystal fiber for both nonlinearity enhancement and dispersion compensation. The laser generates stable dissipative solitons with large linear chirp in the net normal dispersion regime. Pulses that are 8.7 ps long are externally compressed to 118 fs, outperforming current nanotube-based Yb-doped fiber laser designs.

  13. Femtosecond Mode-locked Fiber Laser at 1 μm Via Optical Microfiber Dispersion Management.

    Science.gov (United States)

    Wang, Lizhen; Xu, Peizhen; Li, Yuhang; Han, Jize; Guo, Xin; Cui, Yudong; Liu, Xueming; Tong, Limin

    2018-03-16

    Mode-locked Yb-doped fiber lasers around 1 μm are attractive for high power applications and low noise pulse train generation. Mode-locked fiber lasers working in soliton and stretched-pulse regime outperform others in terms of the laser noise characteristics, mechanical stability and easy maintenance. However, conventional optical fibers always show a normal group velocity dispersion around 1 μm, leading to the inconvenience for necessary dispersion management. Here we show that optical microfibers having a large anomalous dispersion around 1 μm can be integrated into mode-locked Yb-doped fiber lasers with ultralow insertion loss down to -0.06 dB, enabling convenient dispersion management of the laser cavity. Besides, optical microfibers could also be adopted to spectrally broaden and to dechirp the ultrashort pulses outside the laser cavity, giving rise to a pulse duration of about 110 fs. We believe that this demonstration may facilitate all-fiber format high-performance ultrashort pulse generation at 1 μm and may find applications in precision measurements, large-scale facility synchronization and evanescent-field-based optical sensing.

  14. Passively mode-locked laser with an ultra-narrow spectral width

    Science.gov (United States)

    Kues, Michael; Reimer, Christian; Wetzel, Benjamin; Roztocki, Piotr; Little, Brent E.; Chu, Sai T.; Hansson, Tobias; Viktorov, Evgeny A.; Moss, David J.; Morandotti, Roberto

    2017-01-01

    Most mode-locking techniques introduced in the past focused mainly on increasing the spectral bandwidth to achieve ultrashort, sub-picosecond-long coherent light pulses. By contrast, less importance seemed to be given to mode-locked lasers generating Fourier-transform-limited nanosecond pulses, which feature the narrow spectral bandwidths required for applications in spectroscopy, the efficient excitation of molecules, sensing and quantum optics. Here, we demonstrate a passively mode-locked laser system that relies on simultaneous nested cavity filtering and cavity-enhanced nonlinear interactions within an integrated microring resonator. This allows us to produce optical pulses in the nanosecond regime (4.3 ns in duration), with an overall spectral bandwidth of 104.9 MHz—more than two orders of magnitude smaller than previous realizations. The very narrow bandwidth of our laser makes it possible to fully characterize its spectral properties in the radiofrequency domain using widely available GHz-bandwidth optoelectronic components. In turn, this characterization reveals the strong coherence of the generated pulse train.

  15. Measuring a Fiber-Optic Delay Line Using a Mode-Locked Laser

    Science.gov (United States)

    Tu, Meirong; McKee, Michael R.; Pak, Kyung S.; Yu, Nan

    2010-01-01

    The figure schematically depicts a laboratory setup for determining the optical length of a fiber-optic delay line at a precision greater than that obtainable by use of optical time-domain reflectometry or of mechanical measurement of length during the delay-line-winding process. In this setup, the delay line becomes part of the resonant optical cavity that governs the frequency of oscillation of a mode-locked laser. The length can then be determined from frequency-domain measurements, as described below. The laboratory setup is basically an all-fiber ring laser in which the delay line constitutes part of the ring. Another part of the ring - the laser gain medium - is an erbium-doped fiber amplifier pumped by a diode laser at a wavelength of 980 nm. The loop also includes an optical isolator, two polarization controllers, and a polarizing beam splitter. The optical isolator enforces unidirectional lasing. The polarization beam splitter allows light in only one polarization mode to pass through the ring; light in the orthogonal polarization mode is rejected from the ring and utilized as a diagnostic output, which is fed to an optical spectrum analyzer and a photodetector. The photodetector output is fed to a radio-frequency spectrum analyzer and an oscilloscope. The fiber ring laser can generate continuous-wave radiation in non-mode-locked operation or ultrashort optical pulses in mode-locked operation. The mode-locked operation exhibited by this ring is said to be passive in the sense that no electro-optical modulator or other active optical component is used to achieve it. Passive mode locking is achieved by exploiting optical nonlinearity of passive components in such a manner as to obtain ultra-short optical pulses. In this setup, the particular nonlinear optical property exploited to achieve passive mode locking is nonlinear polarization rotation. This or any ring laser can support oscillation in multiple modes as long as sufficient gain is present to overcome

  16. Semiconductor Laser with a Self-Pumped Phase Conjugate External Cavity

    Science.gov (United States)

    1992-10-01

    virtually the case for the DPCM . It shows the greatest potential for laser phasing, of any geometry. In that device, two independent pump beams are... DPCM in that respect, except that only a single pump beam is used. Thus its study falls under the self-imposed guidelines of applicability for laser...PPCM, as in its cousin the DPCM , the beams are constrained so that only a single grating is written. Consequently, the reflection intensity is stable [61

  17. Stabilization of the Absolute Frequency and Phase of a Compact, Low Jitter Modelocked Semiconductor Diode Laser

    National Research Council Canada - National Science Library

    Delfyett, Peter J., Jr

    2005-01-01

    .... To achieve this, an intracavity Pound-Drever-Hall technique was used on a 10 GHz harmonically mode-locked semiconductor ring laser and obtained a simultaneous optical frequency comb stabilization...

  18. Dispersive-cavity actively mode-locked fiber laser for stable radio frequency delivery

    International Nuclear Information System (INIS)

    Dai, Yitang; Wang, Ruixin; Yin, Feifei; Xu, Kun; Li, Jianqiang; Lin, Jintong

    2013-01-01

    We report a novel technique for highly stable transfer of a radio frequency (RF) comb over long optical fiber link, which is highly dispersive and is a part of an actively mode-locked fiber laser. Phase fluctuation along the fiber link, which is mainly induced by physical vibration and temperature fluctuations, is automatically compensated by the self-adapted wavelength shifting. Without phase-locking loop or any tunable parts, stable radio frequency is transferred over a 2-km fiber link, with a time jitter suppression ratio larger than 110. (letter)

  19. Intracavity coherent interaction of mode-locked pulse train with resonant medium

    Science.gov (United States)

    Masuda, Koji

    Resonant interactions of a mode-locked pulse train with intracavity samples, namely rubidium-87 (Rb-87) vapor and Fabry-Perot etalon, placed inside a laser cavity are studied in the light of developing ultra-sensitive laser sensors to measure a small magnetic field and a minute change of index of refraction of a sample material, respectively. A Rb-87 vapor provides an opportunity for a compact high-sensitivity atomic magnetometer due to its accessibility by the standard laser sources and to the large ensemble magnetization. By employing the ultra-sensitive interferometric technique utilizing the intracavity properties of a mode-locked laser, the performance of the Rb-87 magnetometer can be further improved. The fundamental properties of coherent interaction between a mode-locked pulse train and a Rb-87 vapor are studied in numerical calculations of 33 density matrix equations and the reduced wave equation, which are then examined in experiments. In particular, a coherent dark-state is created by the pulse train and is further enhanced by means of spectral shaping or polarization modulation of the excitation pulse train. Experiments performed inside a laser cavity show that the atomic coherence is still preserved due to the coherent nature of interaction between the Rb-87 vapor and the ultrashort pulses occurred within a short time scale compared to the atomic relaxation times, which results in nonlinear propagation of the pulses as well as an observation of the dark-line resonance inside the laser cavity. A Fabry-Perot etalon is a type of optical cavity and serves as a tuning element of the frequency of cw-lasers. By inserting a Fabry-Perot etalon inside a mode-locked laser, the cavity resonance modes are modied due to a coupling between the two cavities, which leads to unique temporal and spectral characteristics of the resultant pulse train and its frequency comb. Both the temporal and spectral properties of the pulse train are studied in detail in experiments as

  20. Active-passively mode-locked dye laser for diagnosis of laser-produced plasmas

    International Nuclear Information System (INIS)

    Teng, Y.L.; Fedosejevs, R.; Sigel, R.

    1981-03-01

    In this report an active-passively mode-locked, flashlamp-pumped dye laser for diagnosis of laser-produced plasmas is described. This dye laser system used as a pulsed light source for high-speed photography of laser-target experiments was synchronized to the ASTERIX III iodine laser pulse with better than 100 ps accuracy. The single pulse energy was 10 μJ, pulse duration less than 10 ps. In 111 shots clear shadowgrams were obtained during a total of 151 target shots, i.e. the system worked well in 74% of the shots. (orig.)

  1. Swept source optical coherence microscopy using a Fourier domain mode-locked laser.

    Science.gov (United States)

    Huang, Shu-Wei; Aguirre, Aaron D; Huber, Robert A; Adler, Desmond C; Fujimoto, James G

    2007-05-14

    Swept source optical coherence microscopy (OCM) enables cellular resolution en face imaging as well as integration with optical coherence tomography (OCT) cross sectional imaging. A buffered Fourier domain mode-locked (FDML) laser light source provides high speed, three dimensional imaging. Image resolutions of 1.6 microm x 8 microm (transverse x axial) with a 220 microm x 220 microm field of view and sensitivity higher than 98 dB are achieved. Three dimensional cellular imaging is demonstrated in vivo in the Xenopus laevis tadpole and ex vivo in the rat kidney and human colon.

  2. Stability of the mode-locking regime in tapered quantum-dot lasers

    Science.gov (United States)

    Bardella, P.; Drzewietzki, L.; Rossetti, M.; Weber, C.; Breuer, S.

    2018-02-01

    We study numerically and experimentally the role of the injection current and reverse bias voltage on the pulse stability of tapered, passively mode-locked, Quantum Dot (QD) lasers. By using a multi-section delayed differential equation and introducing in the model the QD inhomogenous broadening, we are able to predict the onset of leading and trailing edge instabilities in the emitted pulse trains and to identify specific trends of stability in dependence on the laser biasing conditions. The numerical results are confirmed experimentally trough amplitude and timing stability analysis of the pulses.

  3. Green pulsed lidar-radar emitter based on a multipass frequency-shifting external cavity.

    Science.gov (United States)

    Zhang, Haiyang; Brunel, Marc; Romanelli, Marco; Vallet, Marc

    2016-04-01

    This paper investigates the radio frequency (RF) up-conversion properties of a frequency-shifting external cavity on a laser beam. We consider an infrared passively Q-switched pulsed laser whose intensity modulation results from the multiple round-trips in the external cavity, which contains a frequency shifter. The output beam undergoes optical second-harmonic generation necessary to reach the green wavelength. We model the pulse train using a rate-equation model to simulate the laser pulses, together with a time-delayed interference calculation taking both the diffraction efficiency and the Gaussian beam propagation into account. The predictions are verified experimentally using a diode-pumped Nd:YAG laser passively Q-switched by Cr4+:YAG whose pulse train makes multiple round-trips in a mode-matched external cavity containing an acousto-optic frequency shifter driven at 85 MHz. Second-harmonic generation is realized in a KTP crystal, yielding RF-modulated pulses at 532 nm with a modulation contrast of almost 100%. RF harmonics up to the 6th order (1.020 GHz) are observed in the green output pulses. Such a RF-modulated green laser may find applications in underwater detection and ranging.

  4. Multiple-Pulse Operation and Bound States of Solitons in Passive Mode-Locked Fiber Lasers

    Directory of Open Access Journals (Sweden)

    A. Komarov

    2012-01-01

    Full Text Available We present results of our research on a multiple-pulse operation of passive mode-locked fiber lasers. The research has been performed on basis of numerical simulation. Multihysteresis dependence of both an intracavity energy and peak intensities of intracavity ultrashort pulses on pump power is found. It is shown that the change of a number of ultrashort pulses in a laser cavity can be realized by hard as well as soft regimes of an excitation and an annihilation of new solitons. Bound steady states of interacting solitons are studied for various mechanisms of nonlinear losses shaping ultrashort pulses. Possibility of coding of information on basis of soliton trains with various bonds between neighboring pulses is discussed. The role of dispersive wave emitted by solitons because of lumped intracavity elements in a formation of powerful soliton wings is analyzed. It is found that such powerful wings result in large bounding energies of interacting solitons in steady states. Various problems of a soliton interaction in passive mode-locked fiber lasers are discussed.

  5. Electronic control of different generation regimes in mode-locked all-fibre F8 laser

    Science.gov (United States)

    Kobtsev, Sergey; Ivanenko, Aleksey; Kokhanovskiy, Alexey; Smirnov, Sergey

    2018-04-01

    We demonstrate for the first time an electronically controlled realisation of markedly different generation regimes in a mode-locked all-fibre figure-eight (F8) Yb-doped laser. Electronic adjustment of the ratio of pumping powers of two amplification stages in a nonlinear amplifying loop mirror enables the establishment of stable pulse generation regimes with different degrees of coherence and control over their parameters within relatively broad limits, with the pulse duration range exceeding a factor of two in the picosecond domain for coherent and incoherent pulses, the energy range exceeding an order of magnitude for incoherent pulses (2.2-24.8 nJ) and over a factor of 8 for coherent pulses (1.9-16.2 nJ). Adjustment of the pumping powers allows one to maintain the duration of the coherent pulses and to set their peak power in the range of 32.5-292.5 W. The proposed configuration of electronic control over the radiation parameters of a mode-locked all-fibre F8 laser enables reproducible generation of pulses of different types with specified parameters within a broad range of values.

  6. Self-mode-locking operation of a diode-end-pumped Tm:YAP laser with watt-level output power

    Science.gov (United States)

    Zhang, Su; Zhang, Xinlu; Huang, Jinjer; Wang, Tianhan; Dai, Junfeng; Dong, Guangzong

    2018-03-01

    We report on a high power continuous wave (CW) self-mode-locked Tm:YAP laser pumped by a 792 nm laser diode. Without any additional mode-locking elements in the cavity, stable and self-starting mode-locking operation has been realized. The threshold pump power of the CW self-mode-locked Tm:YAP laser is only 5.4 W. The maximum average output power is as high as 1.65 W at the pump power of 12 W, with the repetition frequency of 468 MHz and the center wavelength of 1943 nm. To the best of our knowledge, this is the first CW self-mode-locked Tm:YAP laser. The experiment results show that the Tm:YAP crystal is a promising gain medium for realizing the high power self-mode-locking operation at 2 µm.

  7. Development of a Single-Frequency Narrow Linewidth 1.5mm Semiconductor Laser Suitable for Spaceflight Operation Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In this Phase II proposal we plan to design and develop a semiconductor, low phase/frequency noise, single-frequency, external cavity semiconductor laser (ECL)...

  8. Cr:ZnS saturable absorber passively Q-switched mode-locking Tm,Ho:LLF laser.

    Science.gov (United States)

    Zhang, Xinlu; Luo, Yong; Wang, Tianhan; Dai, Junfeng; Zhang, Jianxin; Li, Jiang; Cui, Jinhui; Huang, Jinjer

    2017-04-10

    We first report on a diode-end-pumped passively Q-switched mode-locking Tm,Ho:LLF laser at 2053 nm by using a Cr:ZnS saturable absorber. A stable Q-switched mode-locking pulse train with a nearly 100% modulation depth was achieved. The repetition frequency of the Q-switched pulse envelope increased from 0.5 to 12.3 kHz with increasing pump power from 1 to 4.36 W. The maximum average output power of 145 mW was obtained, and the width of the mode-locked pulse was estimated to be less than 682 ps with a 250 MHz repetition frequency within a Q-switched pulse envelope of about 700 ns.

  9. Bright-dark rogue wave in mode-locked fibre laser (Conference Presentation)

    Science.gov (United States)

    Kbashi, Hani; Kolpakov, Stanislav; Martinez, Amós; Mou, Chengbo; Sergeyev, Sergey V.

    2017-05-01

    Bright-Dark Rogue Wave in Mode-Locked Fibre Laser Hani Kbashi1*, Amos Martinez1, S. A. Kolpakov1, Chengbo Mou, Alex Rozhin1, Sergey V. Sergeyev1 1Aston Institute of Photonic Technologies, School of Engineering and Applied Science Aston University, Birmingham, B4 7ET, UK kbashihj@aston.ac.uk , 0044 755 3534 388 Keywords: Optical rogue wave, Bright-Dark rogue wave, rogue wave, mode-locked fiber laser, polarization instability. Abstract: Rogue waves (RWs) are statistically rare localized waves with high amplitude that suddenly appear and disappear in oceans, water tanks, and optical systems [1]. The investigation of these events in optics, optical rogue waves, is of interest for both fundamental research and applied science. Recently, we have shown that the adjustment of the in-cavity birefringence and pump polarization leads to emerge optical RW events [2-4]. Here, we report the first experimental observation of vector bright-dark RWs in an erbium-doped stretched pulse mode-locked fiber laser. The change of induced in-cavity birefringence provides an opportunity to observe RW events at pump power is a little higher than the lasing threshold. Polarization instabilities in the laser cavity result in the coupling between two orthogonal linearly polarized components leading to the emergence of bright-dark RWs. The observed clusters belongs to the class of slow optical RWs because their lifetime is of order of a thousand of laser cavity roundtrip periods. References: 1. D. R. Solli, C. Ropers, P. Koonath,and B. Jalali, Optical rogue waves," Nature, 450, 1054-1057, 2007. 2. S. V. Sergeyev, S. A. Kolpakov, C. Mou, G. Jacobsen, S. Popov, and V. Kalashnikov, "Slow deterministic vector rogue waves," Proc. SPIE 9732, 97320K (2016). 3. S. A. Kolpakov, H. Kbashi, and S. V. Sergeyev, "Dynamics of vector rogue waves in a fiber laser with a ring cavity," Optica, 3, 8, 870, (2016). 5. S. Kolpakov, H. Kbashi, and S. Sergeyev, "Slow optical rogue waves in a unidirectional fiber laser

  10. Large net-normal dispersion Er-doped fibre laser mode-locked with a nonlinear amplifying loop mirror

    Science.gov (United States)

    Bowen, Patrick; Erkintalo, Miro; Broderick, Neil G. R.

    2018-03-01

    We report on an environmentally stable, all-PM-fibre, Er-doped, mode-locked laser with a central wavelength of 1550 nm. Significantly, the laser possesses large net-normal dispersion such that its dynamics are comparable to that of an all-normal dispersion fibre laser at 1 μm with an analogous architecture. The laser is mode-locked with a nonlinear amplifying loop mirror to produce pulses that are externally compressible to 500 fs. Experimental results are in good agreement with numerical simulations.

  11. High-power femtosecond pulse generation in a passively mode-locked Nd:SrLaAlO4 laser

    Science.gov (United States)

    Liu, Shan-De; Dong, Lu-Lu; Zheng, Li-He; Berkowski, Marek; Su, Liang-Bi; Ren, Ting-Qi; Peng, Yan-Dong; Hou, Jia; Zhang, Bai-Tao; He, Jing-Liang

    2016-07-01

    A high optical quality Nd:SrLaAlO4 (Nd:SLA) crystal was grown using the Czochralski method and showed broad fluorescence spectrum with a full width at half maximum value of 34 nm, which is beneficial for generating femtosecond laser pulses. A stable diode-pumped passively mode-locked femtosecond Nd:SLA laser with 458 fs pulse duration was achieved for the first time at a central wavelength of 1077.9 nm. The average output power of the continuous-wave mode-locked laser was 520 mW and the repetition rate was 78.5 MHz.

  12. Harmonic mode-locking and sub-round-trip time nonlinear dynamics of electro-optically controlled solid state laser

    Science.gov (United States)

    Gorbunkov, M. V.; Maslova, Yu Ya; Petukhov, V. A.; Semenov, M. A.; Shabalin, Yu V.; Tunkin, V. G.

    2018-03-01

    Harmonic mode-locking in a solid state laser due to optoelectronic control is studied numerically on the basis of two methods. The first one is detailed numeric simulation taking into account laser radiation fine time structure. It is shown that optimally chosen feedback delay leads to self-started mode-locking with generation of desired number of pulses in the laser cavity. The second method is based on discrete maps for short laser pulse energy. Both methods show that the application of combination of positive and negative feedback loops allows to reduce the period of regular nonlinear dynamics down to a fraction of a laser cavity round trip time.

  13. Report on first masing and single mode locking in a prebunched beam FEM oscillator

    Energy Technology Data Exchange (ETDEWEB)

    Cohen, M.; Eichenbaum, A.; Kleinman, H. [Tel-Aviv Univ., Ramat-Aviv (Israel)] [and others

    1995-12-31

    Radiation characteristics of a table-top free electron maser (FEM) are described in this paper. The FEM employs a prebunched electron beam and is operated as an oscillator in the low-gain collective (Raman) regime. Using electron beam prebunching single mode locking at any one of the possible oscillation modes was obtained. The electron beam is prebunched by a microwave tube section before it is injected into the wiggler. By tuning the electron beam bunching frequency, the FEM oscillation frequency can be locked to any eigen frequency of the resonant waveguide cavity which is within the frequency band of net gain of the FEM. The oscillation build up process is sped up, when the FEM operates with a prebunched electron beam, and the build-up time of radiation is shortened significantly. First measurements of masing with and without prebunching and characterization of the emitted radiation are reported.

  14. Mode locking and quasiperiodicity in a discrete-time Chialvo neuron model

    Science.gov (United States)

    Wang, Fengjuan; Cao, Hongjun

    2018-03-01

    The two-dimensional parameter spaces of a discrete-time Chialvo neuron model are investigated. Our studies demonstrate that for all our choice of two parameters (i) the fixed point is destabilized via Neimark-Sacker bifurcation; (ii) there exist mode locking structures like Arnold tongues and shrimps, with periods organized in a Farey tree sequence, embedded in quasiperiodic/chaotic region. We determine analytically the location of the parameter sets where Neimark-Sacker bifurcation occurs, and the location on this curve where Arnold tongues of arbitrary period are born. Properties of the transition that follows the so-called two-torus from quasiperiodicity to chaos are presented clearly and proved strictly by using numerical simulations such as bifurcation diagrams, the largest Lyapunov exponent diagram on MATLAB and C++.

  15. Cavity-augmented frequency tripling of a continuous wave mode-locked laser

    International Nuclear Information System (INIS)

    McConnell, Gail; Ferguson, Allister I.; Langford, Nigel

    2001-01-01

    We present a model and experimental investigation of a singly-resonant optical cavity to enhance the nonlinear conversion efficiency of a continuous wave mode-locked all-solid-state laser source to produce an efficient source of ultraviolet radiation. For input pulses of approximately 33 ps duration at 4.4 ns intervals, our model predicts greater than 30% conversion from fundamental to third harmonic which is particularly attractive for fundamental sources of modest average power. Experimentally, we have achieved overall optical conversion efficiencies from fundamental to third harmonic wavelength typically greater than 11%, compared with less than 0.4% in a single pass geometry. We have measured an average power of 320 mW at λ=355 nm at picosecond pulse duration, which corresponds to a generated third harmonic average power of 0.5 W. (author)

  16. Kerr-lens mode-locked Ti:Sapphire laser pumped by a single laser diode

    Science.gov (United States)

    Kopylov, D. A.; Esaulkov, M. N.; Kuritsyn, I. I.; Mavritskiy, A. O.; Perminov, B. E.; Konyashchenko, A. V.; Murzina, T. V.; Maydykovskiy, A. I.

    2018-04-01

    The performance of a Ti:sapphire laser pumped by a single 461 nm laser diode is presented for both the continuous-wave and the mode-locked regimes of operation. We introduce a simple astigmatism correction scheme for the laser diode beam consisting of two cylindrical lenses affecting the pump beam along the fast axis of the laser diode, which provides the mode-matching between the nearly square-shaped pump beam and the cavity mode. The resulting efficiency of the suggested Ti:Sapphire oscillator pumped by such a laser diode is analyzed for the Ti:sapphire crystals of 3 mm, 5 mm and 10 mm in length. We demonstrate that such a system provides the generation of ultrashort pulses up to 15 fs in duration with the repetition rate of 87 MHz, the average power being 170 mW.

  17. Electronic frequency tuning of the acousto-optic mode-locking device of a laser

    Science.gov (United States)

    Magdich, L. N.; Balakshy, V. I.; Mantsevich, S. N.

    2017-11-01

    The effect of the electronic tuning of the acoustic resonances in an acousto-optic mode-locking device of a laser is investigated theoretically and experimentally. The problem of the excitation of a Fabry-Perot acoustic resonator by a plate-like piezoelectric transducer (PET) is solved in the approximation of plane acoustic waves taking into consideration the actual parameters of an RF generator and the elements for matching the PET to the generator. Resonances are tuned by changing the matching inductance that was connected in parallel to the transducer of the acousto-optic cell. The cell used in the experiment was manufactured from fused silica and included a lithium niobate PET. Changes in the matching inductance in the range of 0.025 to 0.2 μH provided the acoustic-resonance frequency tuning by 0.19 MHz, which exceeds the acoustic- resonance half-width.

  18. A Theoretical Investigation of Mode-Locking Phenomena in Reversed Field Pinches

    International Nuclear Information System (INIS)

    Richard Fitzpatrick

    2004-01-01

    OAK-B135 This paper investigates the formation and breakup of the ''slinky mode'' in an RFP using analytic techniques previously employed to examine mode locking phenomena in tokamaks. The slinky mode is a toroidally localized, coherent interference pattern in the magnetic field which co-rotates with the plasma at the reversal surface. This mode forms, as a result of the nonlinear coupling of multiple m = 1 core tearing modes, via a bifurcation which is similar to that by which toroidally coupled tearing modes lock together in a tokamak. The slinky mode breaks up via a second bifurcation which is similar to that by which toroidally coupled tearing modes in a tokamak unlock. However, the typical m = 1 mode amplitude below which slinky breakup is triggered is much smaller than that above which slinky formation occurs. Analytic expressions for the slinky formation and breakup thresholds are obtained in all regimes of physical interest. The locking of the slinky mode to a static error-field is also investigated analytically. Either the error-field arrests the rotation of the plasma at the reversal surface before the formation of the slinky mode, so that the mode subsequently forms as a non-rotating mode, or the slinky mode forms as a rotating mode and subsequently locks to the error-field. Analytic expressions for the locking and unlocking thresholds are obtained in all regimes of physical interest. The problems associated with a locked slinky mode can be alleviated by canceling out the accidentally produced error-field responsible for locking the slinky mode, using a deliberately created ''control'' error-field. Alternatively, the locking angle of the slinky mode can be swept toroidally by rotating the control field

  19. A theoretical investigation of mode-locking phenomena in reversed field pinches

    Energy Technology Data Exchange (ETDEWEB)

    Richard Fitzpatrick

    2004-03-17

    OAK-B135 This paper investigates the formation and breakup of the ''slinky mode'' in an RFP using analytic techniques previously employed to examine mode locking phenomena in tokamaks. The slinky mode is a toroidally localized, coherent interference pattern in the magnetic field which co-rotates with the plasma at the reversal surface. This mode forms, as a result of the nonlinear coupling of multiple m = 1 core tearing modes, via a bifurcation which is similar to that by which toroidally coupled tearing modes lock together in a tokamak. The slinky mode breaks up via a second bifurcation which is similar to that by which toroidally coupled tearing modes in a tokamak unlock. However, the typical m = 1 mode amplitude below which slinky breakup is triggered is much smaller than that above which slinky formation occurs. Analytic expressions for the slinky formation and breakup thresholds are obtained in all regimes of physical interest. The locking of the slinky mode to a static error-field is also investigated analytically. Either the error-field arrests the rotation of the plasma at the reversal surface before the formation of the slinky mode, so that the mode subsequently forms as a non-rotating mode, or the slinky mode forms as a rotating mode and subsequently locks to the error-field. Analytic expressions for the locking and unlocking thresholds are obtained in all regimes of physical interest. The problems associated with a locked slinky mode can be alleviated by canceling out the accidentally produced error-field responsible for locking the slinky mode, using a deliberately created ''control'' error-field. Alternatively, the locking angle of the slinky mode can be swept toroidally by rotating the control field.

  20. A Theoretical Investigation of Mode-Locking Phenomena in Reversed Field Pinches

    Energy Technology Data Exchange (ETDEWEB)

    Richard Fitzpatrick

    2004-04-07

    OAK-B135 This paper investigates the formation and breakup of the ''slinky mode'' in an RFP using analytic techniques previously employed to examine mode locking phenomena in tokamaks. The slinky mode is a toroidally localized, coherent interference pattern in the magnetic field which co-rotates with the plasma at the reversal surface. This mode forms, as a result of the nonlinear coupling of multiple m = 1 core tearing modes, via a bifurcation which is similar to that by which toroidally coupled tearing modes lock together in a tokamak. The slinky mode breaks up via a second bifurcation which is similar to that by which toroidally coupled tearing modes in a tokamak unlock. However, the typical m = 1 mode amplitude below which slinky breakup is triggered is much smaller than that above which slinky formation occurs. Analytic expressions for the slinky formation and breakup thresholds are obtained in all regimes of physical interest. The locking of the slinky mode to a static error-field is also investigated analytically. Either the error-field arrests the rotation of the plasma at the reversal surface before the formation of the slinky mode, so that the mode subsequently forms as a non-rotating mode, or the slinky mode forms as a rotating mode and subsequently locks to the error-field. Analytic expressions for the locking and unlocking thresholds are obtained in all regimes of physical interest. The problems associated with a locked slinky mode can be alleviated by canceling out the accidentally produced error-field responsible for locking the slinky mode, using a deliberately created ''control'' error-field. Alternatively, the locking angle of the slinky mode can be swept toroidally by rotating the control field.

  1. A theoretical investigation of mode-locking phenomena in reversed field pinches

    International Nuclear Information System (INIS)

    Richard Fitzpatrick

    2004-01-01

    OAK-B135 This paper investigates the formation and breakup of the ''slinky mode'' in an RFP using analytic techniques previously employed to examine mode locking phenomena in tokamaks. The slinky mode is a toroidally localized, coherent interference pattern in the magnetic field which co-rotates with the plasma at the reversal surface. This mode forms, as a result of the nonlinear coupling of multiple m = 1 core tearing modes, via a bifurcation which is similar to that by which toroidally coupled tearing modes lock together in a tokamak. The slinky mode breaks up via a second bifurcation which is similar to that by which toroidally coupled tearing modes in a tokamak unlock. However, the typical m = 1 mode amplitude below which slinky breakup is triggered is much smaller than that above which slinky formation occurs. Analytic expressions for the slinky formation and breakup thresholds are obtained in all regimes of physical interest. The locking of the slinky mode to a static error-field is also investigated analytically. Either the error-field arrests the rotation of the plasma at the reversal surface before the formation of the slinky mode, so that the mode subsequently forms as a non-rotating mode, or the slinky mode forms as a rotating mode and subsequently locks to the error-field. Analytic expressions for the locking and unlocking thresholds are obtained in all regimes of physical interest. The problems associated with a locked slinky mode can be alleviated by canceling out the accidentally produced error-field responsible for locking the slinky mode, using a deliberately created ''control'' error-field. Alternatively, the locking angle of the slinky mode can be swept toroidally by rotating the control field

  2. Mode-locking neurodynamics predict human auditory brainstem responses to musical intervals.

    Science.gov (United States)

    Lerud, Karl D; Almonte, Felix V; Kim, Ji Chul; Large, Edward W

    2014-02-01

    The auditory nervous system is highly nonlinear. Some nonlinear responses arise through active processes in the cochlea, while others may arise in neural populations of the cochlear nucleus, inferior colliculus and higher auditory areas. In humans, auditory brainstem recordings reveal nonlinear population responses to combinations of pure tones, and to musical intervals composed of complex tones. Yet the biophysical origin of central auditory nonlinearities, their signal processing properties, and their relationship to auditory perception remain largely unknown. Both stimulus components and nonlinear resonances are well represented in auditory brainstem nuclei due to neural phase-locking. Recently mode-locking, a generalization of phase-locking that implies an intrinsically nonlinear processing of sound, has been observed in mammalian auditory brainstem nuclei. Here we show that a canonical model of mode-locked neural oscillation predicts the complex nonlinear population responses to musical intervals that have been observed in the human brainstem. The model makes predictions about auditory signal processing and perception that are different from traditional delay-based models, and may provide insight into the nature of auditory population responses. We anticipate that the application of dynamical systems analysis will provide the starting point for generic models of auditory population dynamics, and lead to a deeper understanding of nonlinear auditory signal processing possibly arising in excitatory-inhibitory networks of the central auditory nervous system. This approach has the potential to link neural dynamics with the perception of pitch, music, and speech, and lead to dynamical models of auditory system development. Copyright © 2013 Elsevier B.V. All rights reserved.

  3. Wavelength beam combining of a 980-nm tapered diode laser bar in an external cavity

    DEFF Research Database (Denmark)

    Vijayakumar, Deepak; Jensen, Ole Bjarlin; Thestrup Nielsen, Birgitte

    2010-01-01

    . By adapting a bar geometry, the output power could be scaled even up to several tens of watts. Unfortunately, the high divergence which is a characteristic feature of the bar geometry could lead to a degradation of the overall beam quality of the laser bar. However, spectral beam combining is an effective...... solution for preserving the beam quality of the bar in the range of that of a single emitter and at the same time, enabling the power scaling. We report spectral beam combining applied to a 12 emitter tapered laser bar at 980 nm. The external cavity has been designed for a wavelength separation of 4.0 nm...

  4. Frequency and time domain analysis of an external cavity laser with strong filtered optical feedback

    DEFF Research Database (Denmark)

    Detoma, Enrico; Tromborg, Bjarne; Montrosset, Ivo

    The stability properties of an external cavity laser with strong grating-filtered optical feedback to an anti-reflection coated facet are studied with a general frequency domain model. The model takes into account non-linear effects like four wave mixing and gain compression. A small......-signal analysis in the frequency domain allows a calculation of the range of operation without mode hopping around the grating reflectivity peak. This region should be as large as possible for proper operation of the tunable laser source. The analysis shows this stabilizing effect of mode coupling and gain...

  5. Tunable single and dual mode operation of an external cavity quantum-dot injection laser

    Energy Technology Data Exchange (ETDEWEB)

    Biebersdorf, A [Photonics and Optoelectronics Group, Physics Department and CeNS, Ludwig-Maximilians-Universitaet, Amalienstrasse 54, D-80799 Munich (Germany); Lingk, C [Photonics and Optoelectronics Group, Physics Department and CeNS, Ludwig-Maximilians-Universitaet, Amalienstrasse 54, D-80799 Munich (Germany); De Giorgi, M [Photonics and Optoelectronics Group, Physics Department and CeNS, Ludwig-Maximilians-Universitaet, Amalienstrasse 54, D-80799 Munich (Germany); Feldmann, J [Photonics and Optoelectronics Group, Physics Department and CeNS, Ludwig-Maximilians-Universitaet, Amalienstrasse 54, D-80799 Munich (Germany); Sacher, J [Sacher Lasertechnik GmbH, Hannah Arendt Strasse 3-7, D-35037 Marburg (Germany); Arzberger, M [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, D-85748 Garching (Germany); Ulbrich, C [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, D-85748 Garching (Germany); Boehm, G [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, D-85748 Garching (Germany); Amann, M-C [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, D-85748 Garching (Germany); Abstreiter, G [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, D-85748 Garching (Germany)

    2003-08-21

    We investigate quantum-dot (QD) lasers in an external cavity using Littrow and Littman configurations. Here, we report on a continuously tunable QD laser with a broad tuning range from 1047 to 1130 nm with high stability and efficient side mode suppression. The full-width at half-maximum of the laser line is 0.85 nm determined mainly by the quality of the external grating. This laser can be operated in a dual-mode modus, where the mode-spacing can be tuned continuously between 1.1 and 34 nm. Simultaneous emission of the two laser modes is shown by sum frequency generation experiments.

  6. High-speed polarization-sensitive OCT at 1060 nm using a Fourier domain mode-locked swept source

    DEFF Research Database (Denmark)

    Marschall, Sebastian; Torzicky, Teresa; Klein, Thomas

    2012-01-01

    sufficiently large datasets. Here, we demonstrate PS-OCT imaging at 350 kHz A-scan rate using a two-channel PS-OCT system in conjunction with a Fourier domain mode-locked laser. The light source spectrum spans up to 100nm around the water absorption minimum at 1060 nm. By modulating the laser pump current, we...

  7. All-fiber Yb-doped fiber laser passively mode-locking by monolayer MoS2 saturable absorber

    Science.gov (United States)

    Zhang, Yue; Zhu, Jianqi; Li, Pingxue; Wang, Xiaoxiao; Yu, Hua; Xiao, Kun; Li, Chunyong; Zhang, Guangyu

    2018-04-01

    We report on an all-fiber passively mode-locked ytterbium-doped (Yb-doped) fiber laser with monolayer molybdenum disulfide (ML-MoS2) saturable absorber (SA) by three-temperature zone chemical vapor deposition (CVD) method. The modulation depth, saturation fluence, and non-saturable loss of this ML-MoS2 are measured to be 3.6%, 204.8 μJ/cm2 and 6.3%, respectively. Based on this ML-MoS2SA, a passively mode-locked Yb-doped fiber laser has been achieved at 979 nm with pulse duration of 13 ps and repetition rate of 16.51 MHz. A mode-locked fiber laser at 1037 nm is also realized with a pulse duration of 475 ps and repetition rate of 26.5 MHz. To the best of our knowledge, this is the first report that the ML-MoS2 SA is used in an all-fiber Yb-doped mode-locked fiber laser at 980 nm. Our work further points the excellent saturable absorption ability of ML-MoS2 in ultrafast photonic applications.

  8. Tm-doped fiber laser mode-locking with MoS2-polyvinyl alcohol saturable absorber

    Science.gov (United States)

    Cao, Liming; Li, Xing; Zhang, Rui; Wu, Duanduan; Dai, Shixun; Peng, Jian; Weng, Jian; Nie, Qiuhua

    2018-03-01

    We have designed an all-fiber passive mode-locking thulium-doped fiber laser that uses molybdenum disulfide (MoS2) as a saturable absorber (SA) material. A free-standing few-layer MoS2-polyvinyl alcohol (PVA) film is fabricated by liquid phase exfoliation (LPE) and is then transferred onto the end face of a fiber connector. The excellent saturable absorption of the fabricated MoS2-based SA allows the laser to output soliton pulses at a pump power of 500 mW. Fundamental frequency mode-locking is realized at a repetition frequency of 13.9 MHz. The central wavelength is 1926 nm, the 3 dB spectral bandwidth is 2.86 nm and the pulse duration is 1.51 ps. Additionally, third-order harmonic mode-locking of the laser is also achieved. The pulse duration is 1.33 ps, which is slightly narrower than the fundamental frequency mode-locking bandwidth. The experimental results demonstrate that the few-layer MoS2-PVA SA is promising for use in 2 μm laser systems.

  9. Trace-gas sensing using the compliance voltage of an external cavity quantum cascade laser

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, Mark C.; Taubman, Matthew S.

    2013-06-04

    Quantum cascade lasers (QCLs) are increasingly being used to detect, identify, and measure levels of trace gases in the air. External cavity QCLs (ECQCLs) provide a broadly-tunable infrared source to measure absorption spectra of chemicals and provide high detection sensitivity and identification confidence. Applications include detecting chemical warfare agents and toxic industrial chemicals, monitoring building air quality, measuring greenhouse gases for atmospheric research, monitoring and controlling industrial processes, analyzing chemicals in exhaled breath for medical diagnostics, and many more. Compact, portable trace gas sensors enable in-field operation in a wide range of platforms, including handheld units for use by first responders, fixed installations for monitoring air quality, and lightweight sensors for deployment in unmanned aerial vehicles (UAVs). We present experimental demonstration of a new chemical sensing technique based on intracavity absorption in an external cavity quantum cascade laser (ECQCL). This new technique eliminates the need for an infrared photodetector and gas cell by detecting the intracavity absorption spectrum in the compliance voltage of the laser device itself. To demonstrate and characterize the technique, we measure infrared absorption spectra of chemicals including water vapor and Freon-134a. Sub-ppm detection limits in one second are achieved, with the potential for increased sensitivity after further optimization. The technique enables development of handheld, high-sensitivity, and high-accuracy trace gas sensors for in-field use.

  10. A digital frequency stabilization system of external cavity diode laser based on LabVIEW FPGA

    Science.gov (United States)

    Liu, Zhuohuan; Hu, Zhaohui; Qi, Lu; Wang, Tao

    2015-10-01

    Frequency stabilization for external cavity diode laser has played an important role in physics research. Many laser frequency locking solutions have been proposed by researchers. Traditionally, the locking process was accomplished by analog system, which has fast feedback control response speed. However, analog system is susceptible to the effects of environment. In order to improve the automation level and reliability of the frequency stabilization system, we take a grating-feedback external cavity diode laser as the laser source and set up a digital frequency stabilization system based on National Instrument's FPGA (NI FPGA). The system consists of a saturated absorption frequency stabilization of beam path, a differential photoelectric detector, a NI FPGA board and a host computer. Many functions, such as piezoelectric transducer (PZT) sweeping, atomic saturation absorption signal acquisition, signal peak identification, error signal obtaining and laser PZT voltage feedback controlling, are totally completed by LabVIEW FPGA program. Compared with the analog system, the system built by the logic gate circuits, performs stable and reliable. User interface programmed by LabVIEW is friendly. Besides, benefited from the characteristics of reconfiguration, the LabVIEW program is good at transplanting in other NI FPGA boards. Most of all, the system periodically checks the error signal. Once the abnormal error signal is detected, FPGA will restart frequency stabilization process without manual control. Through detecting the fluctuation of error signal of the atomic saturation absorption spectrum line in the frequency locking state, we can infer that the laser frequency stability can reach 1MHz.

  11. Using graphene nano-particle embedded in photonic crystal fiber for evanescent wave mode-locking of fiber laser.

    Science.gov (United States)

    Lin, Yung-Hsiang; Yang, Chun-Yu; Liou, Jia-Hong; Yu, Chin-Ping; Lin, Gong-Ru

    2013-07-15

    A photonic crystal fiber (PCF) with high-quality graphene nano-particles uniformly dispersed in the hole cladding are demonstrated to passively mode-lock the erbium-doped fiber laser (EDFL) by evanescent-wave interaction. The few-layer graphene nano-particles are obtained by a stabilized electrochemical exfoliation at a threshold bias. These slowly and softly exfoliated graphene nano-particle exhibits an intense 2D band and an almost disappeared D band in the Raman scattering spectrum. The saturable phenomena of the extinction coefficient β in the cladding provides a loss modulation for the intracavity photon intensity by the evanescent-wave interaction. The evanescent-wave mode-locking scheme effectively enlarges the interaction length of saturable absorption with graphene nano-particle to provide an increasing transmittance ΔT of 5% and modulation depth of 13%. By comparing the core-wave and evanescent-wave mode-locking under the same linear transmittance, the transmittance of the graphene nano-particles on the end-face of SMF only enlarges from 0.54 to 0.578 with ΔT = 3.8% and the modulation depth of 10.8%. The evanescent wave interaction is found to be better than the traditional approach which confines the graphene nano-particles at the interface of two SMF patchcords. When enlarging the intra-cavity gain by simultaneously increasing the pumping current of 980-nm and 1480-nm pumping laser diodes (LDs) to 900 mA, the passively mode-locked EDFL shortens its pulsewidth to 650 fs and broadens its spectral linewidth to 3.92 nm. An extremely low carrier amplitude jitter (CAJ) of 1.2-1.6% is observed to confirm the stable EDFL pulse-train with the cladding graphene nano-particle based evanescent-wave mode-locking.

  12. Theoretical description of spontaneous pulse formation in a semiconductor microring laser

    International Nuclear Information System (INIS)

    Gil, L.; Columbo, L.

    2011-01-01

    We theoretically describe the spontaneous formation of stable pulses in a GaAs bulk semiconductor microring laser. These pulses are obtained without active or passive mode locking. We show that the parameter regime associated with their existence is limited on one side by the phase instability of the continuous-wave solution, and on the other side by the failure of Lamb's mode-locking criterion. Bistability between the continuous-wave solution and the spontaneous pulses is observed.

  13. Gain broadening and mode-locking in overcoupled second harmonic Q-switched microsecond pulses

    Science.gov (United States)

    Rohde, Ingo; Brinkmann, Ralf

    2014-10-01

    An intracavity frequency doubled, Q-switched Nd:YLF emitting at a wavelength of 527 nm was designed with the goal to temporally stretch the Q-switched pulses up to some microseconds at pulse energies of several millijoules. With different resonator configurations pulse durations between 12 μs and 3 μs with energies of 1 mJ-4.5 mJ have been achieved, which is demanded for an application in ophthalmology. For tighter intracavity foci and high pump power, however, strong power modulations by trains of picosecond pulses on the rear flank of the microsecond pulses were observed, indicating the occurrence of cascading nonlinearities and mode-locking. Simultaneously a significant increase of the fundamental spectrum up to 5 nm was found. A similar effect, which is referred to as gain broadening, has previously been observed by using ppKTP for intracavity second harmonic generation. This is, to the best of our knowledge, the first observation of this effect with unpoled second harmonic media. This project was realized with the support of the German Ministry for Education and Research (BMBF).

  14. K-space linear Fourier domain mode locked laser and applications for optical coherence tomography.

    Science.gov (United States)

    Eigenwillig, Christoph M; Biedermann, Benjamin R; Palte, Gesa; Huber, Robert

    2008-06-09

    We report on a Fourier Domain Mode Locked (FDML) wavelength swept laser source with a highly linear time-frequency sweep characteristic and demonstrate OCT imaging without k-space resampling prior to Fourier transformation. A detailed theoretical framework is provided and different strategies how to determine the optimum drive waveform of the piezo-electrically actuated optical bandpass-filter in the FDML laser are discussed. An FDML laser with a relative optical frequency deviation ??nu/nu smaller than 8 x10(-5) over a 100 nm spectral bandwidth at 1300 nm is presented, enabling high resolution OCT over long ranging depths. Without numerical time-to-frequency resampling and without spectral apodization a sensitivity roll off of 4 dB over 2 mm, 12.5 dB over 4 mm and 26.5 dB over 1 cm at 3.5 mus sweep duration and 106.6 dB maximum sensitivity at 9.2 mW average power is achieved. The axial resolution in air degrades from 14 to 21 mum over 4 mm imaging depth. The compensation of unbalanced dispersion in the OCT sample arm by an adapted tuning characteristic of the source is demonstrated. Good stability of the system without feedback-control loops is observed over hours.

  15. High speed engine gas thermometry by Fourier-domain mode-locked laser absorption spectroscopy.

    Science.gov (United States)

    Kranendonk, Laura A; An, Xinliang; Caswell, Andrew W; Herold, Randy E; Sanders, Scott T; Huber, Robert; Fujimoto, James G; Okura, Yasuhiro; Urata, Yasuhiro

    2007-11-12

    We present a novel method for low noise, high-speed, real-time spectroscopy to monitor molecular absorption spectra. The system is based on a rapidly swept, narrowband CW Fourier-domain mode-locked (FDML) laser source for spectral encoding in time and an optically time-multiplexed split-pulse data acquisition system for improved noise performance and sensitivity. An acquisition speed of ~100 kHz, a spectral resolution better than 0.1 nm over a wavelength range of ~1335-1373 nm and a relative noise level of ~5 mOD (~1% minimum detectable base-e absorbance) are achieved. The system is applied for crank-angle-resolved gas thermometry by H(2)O absorption spectroscopy in an engine motoring at 600 and 900 rpm with a precision of ~1%. Influences of various noise sources such as laser phase and intensity noise, trigger and synchronization jitter in the electronic detection system, and the accuracy of available H(2)O absorption databases are discussed.

  16. Hybrid silicon mode-locked laser with improved RF power by impedance matching

    Science.gov (United States)

    Tossoun, Bassem; Derickson, Dennis; Srinivasan, Sudharsanan; Bowers, John

    2015-02-01

    We design and discuss an impedance matching solution for a hybrid silicon mode-locked laser diode (MLLD) to improve peak optical power coming from the device. In order to develop an impedance matching solution, a thorough measurement and analysis of the MLLD as a function of bias on each of the laser segments was carried out. A passive component impedance matching network was designed at the operating frequency of 20 GHz to optimize RF power delivery to the laser. The hybrid silicon laser was packaged together in a module including the impedance matching circuit. The impedance matching design resulted in a 6 dB (electrical) improvement in the detected modulation spectrum power, as well as approximately a 10 dB phase noise improvement, from the MLLD. Also, looking ahead to possible future work, we discuss a Step Recovery Diode (SRD) driven impulse generator, which wave-shapes the RF drive to achieve efficient injection. This novel technique addresses the time varying impedance of the absorber as the optical pulse passes through it, to provide optimum optical pulse shaping.

  17. Mode-locked Tm-doped fiber laser based on iron-doped carbon nitride nanosheets

    Science.gov (United States)

    Luo, Yongfeng; Zhou, Yan; Tang, Yulong; Xu, Jianqiu; Hu, Chenxia; Gao, Linfeng; Zhang, Haoli; Wang, Qiang

    2017-11-01

    Solution based nanosheets of iron-doped graphitic carbon nitrides (Fe-g-CN) have been prepared and their optical properties (both linear and nonlinear) are studied. These two-dimensional (2D) nanosheets show an absorption spectrum extending to over 2 µm, and in particular they possess strong nonlinear (saturable) absorption in the 2 µm spectral region. A saturable absorber (SA) manufactured from 2D Fe-g-CN nanosheets gives a modulation depth and saturation intensity of 12.9% and 8.9 MW cm‑2, respectively. This SA is further used to mode-lock thulium-doped fiber lasers, producing 2 µm laser pulses with a duration of 16.6 ps (dechirped to 2.2 ps), an average power of 96.4 mW, a pulse energy of 6.3 nJ, and a repetition rate of 15.3 MHz. As a new type of 2D nonlinear material with strong modulation capabilities, solution-based Fe-g-CN nanosheets can be potentially integrated into photonic and optoelectrionic devices, particuarly in the 2 µm spectral region.

  18. External cavity quantum cascade lasers with ultra rapid acousto-optic tuning

    Energy Technology Data Exchange (ETDEWEB)

    Lyakh, A., E-mail: alyakh@pranalytica.com; Barron-Jimenez, R.; Dunayevskiy, I.; Go, R.; Patel, C. Kumar N., E-mail: patel@pranalytica.com [Pranalytica, Inc., 1101 Colorado Ave., Santa Monica, California 90401 (United States)

    2015-04-06

    We report operation of tunable external cavity quantum cascade lasers with emission wavelength controlled by an acousto-optic modulator (AOM). A long-wave infrared quantum cascade laser wavelength tuned from ∼8.5 μm to ∼9.8 μm when the AOM frequency was changed from ∼41MHz to ∼49 MHz. The laser delivered over 350 mW of average power at the center of the tuning curve in a linewidth of ∼4.7 cm{sup −1}. Measured wavelength switching time between any two wavelengths within the tuning range of the QCL was less than 1 μs. Spectral measurements of infrared absorption features of Freon demonstrated a capability of obtaining complete spectral data in less than 20 μs.

  19. Alignment-stabilized interference filter-tuned external-cavity quantum cascade laser.

    Science.gov (United States)

    Kischkat, Jan; Semtsiv, Mykhaylo P; Elagin, Mikaela; Monastyrskyi, Grygorii; Flores, Yuri; Kurlov, Sergii; Peters, Sven; Masselink, W Ted

    2014-12-01

    A passively alignment-stabilized external cavity quantum cascade laser (EC-QCL) employing a "cat's eye"-type retroreflector and an ultra-narrowband transmissive interference filter for wavelength selection is demonstrated and experimentally investigated. Compared with conventional grating-tuned ECQCLs, the setup is nearly two orders of magnitude more stable against misalignment of the components, and spectral fluctuation is reduced by one order of magnitude, allowing for a simultaneously lightweight and fail-safe construction, suitable for applications outdoors and in space. It also allows for a substantially greater level of miniaturization and cost reduction. These advantages fit in well with the general properties of modern QCLs in the promise to deliver useful and affordable mid-infrared-light sources for a variety of spectroscopic and imaging applications.

  20. Note: Demonstration of an external-cavity diode laser system immune to current and temperature fluctuations.

    Science.gov (United States)

    Miao, Xinyu; Yin, Longfei; Zhuang, Wei; Luo, Bin; Dang, Anhong; Chen, Jingbiao; Guo, Hong

    2011-08-01

    We demonstrate an external-cavity laser system using an anti-reflection coated laser diode as gain medium with about 60 nm fluorescence spectrum, and a Rb Faraday anomalous dispersion optical filter (FADOF) as frequency-selecting element with a transmission bandwidth of 1.3 GHz. With 6.4% optical feedback, a single stable longitudinal mode is obtained with a linewidth of 69 kHz. The wavelength of this laser is operating within the center of the highest transmission peak of FADOF over a diode current range from 55 mA to 142 mA and a diode temperature range from 15 °C to 35 °C, thus it is immune to the fluctuations of current and temperature.

  1. Construction and characterization of external cavity diode lasers for atomic physics.

    Science.gov (United States)

    Hardman, Kyle S; Bennetts, Shayne; Debs, John E; Kuhn, Carlos C N; McDonald, Gordon D; Robins, Nick

    2014-04-24

    Since their development in the late 1980s, cheap, reliable external cavity diode lasers (ECDLs) have replaced complex and expensive traditional dye and Titanium Sapphire lasers as the workhorse laser of atomic physics labs. Their versatility and prolific use throughout atomic physics in applications such as absorption spectroscopy and laser cooling makes it imperative for incoming students to gain a firm practical understanding of these lasers. This publication builds upon the seminal work by Wieman, updating components, and providing a video tutorial. The setup, frequency locking and performance characterization of an ECDL will be described. Discussion of component selection and proper mounting of both diodes and gratings, the factors affecting mode selection within the cavity, proper alignment for optimal external feedback, optics setup for coarse and fine frequency sensitive measurements, a brief overview of laser locking techniques, and laser linewidth measurements are included.

  2. Green high-power tunable external-cavity GaN diode laser at 515 nm

    DEFF Research Database (Denmark)

    Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

    2016-01-01

    A 480 mW green tunable diode laser system is demonstrated for the first time to our knowledge. The laser system is based on a GaN broad-area diode laser and Littrow external-cavity feedback. The green laser system is operated in two modes by switching the polarization direction of the laser beam...... incident on the grating. When the laser beam is p-polarized, an output power of 50 mW with a tunable range of 9.2 nm is achieved. When the laser beam is s-polarized, an output power of 480 mW with a tunable range of 2.1 nm is obtained. This constitutes the highest output power from a tunable green diode...... laser system....

  3. Continuously tunable monomode mid-infrared vertical external cavity surface emitting laser on Si

    Science.gov (United States)

    Khiar, A.; Rahim, M.; Fill, M.; Felder, F.; Hobrecker, F.; Zogg, H.

    2010-10-01

    A tunable PbTe based mid-infrared vertical external cavity surface emitting laser is described. The active part is a ˜1 μm thick PbTe layer grown epitaxially on a Bragg mirror on the Si-substrate. The cavity is terminated with a curved Si/SiO Bragg top mirror and pumped optically with a 1.55 μm laser. Cavity length is <100 μm in order that only one longitudinal mode is supported. By changing the cavity length, up to 5% wavelength continuous and mode-hop free tuning is achieved at fixed temperature. The total tuning extends from 5.6 to 4.7 μm at 100-170 K operation temperature.

  4. Frequency tracking and stabilization of a tunable dual-wavelength external-cavity diode laser

    Science.gov (United States)

    Hsu, L.; Chi, L. C.; Wang, S. C.; Pan, Ci-Ling

    1999-09-01

    We show a unique dual-wavelength external-cavity laser diode with frequency tracking capability and obtain a stable beat frequency between the dual-wavelength output. By using a Fabry-Perot interferometer as the frequency discriminator and the time-gating technique in a servo loop, the peak-to-peak frequency fluctuations were stabilized, with respect to the Fabry-Perot cavity, to 86 kHz in the dual-wavelength output at 802.5 and 804.5 nm, and to 17 kHz in their 0.9 THz beat signal. Similar performance was achieved for tuning of the dual wavelength separation ranging from 0.2 to 4 nm.

  5. Compact 84 GHz passive mode-locked fiber laser using dual-fiber coupled fused-quartz microresonator

    Science.gov (United States)

    Liu, Tze-An; Hsu, Yung; Chow, Chi-Wai; Chuang, Yi-Chen; Ting, Wei-Jo; Wang, Bo-Chun; Peng, Jin-Long; Chen, Guan-Hong; Chang, Yuan-Chia

    2017-10-01

    We propose and demonstrate a compact and portable-size 84-GHz passive mode-locked fiber laser, in which a dual-fiber coupled fused-quartz microresonator is employed as the intracavity optical comb filter as well as the optical nonlinear material for optical frequency comb generation. About eight coherent optical tones can be generated in the proposed fiber laser. The 20-dB bandwidth is larger than 588 GHz. The full-width half-maximum pulse-width of the proposed laser is 2.5 ps. We also demonstrate the feasibility of using the proposed passive mode-locked fiber laser to carry a 5-Gbit/s on-off-keying signal and transmit over 20-km standard single mode fiber. A 7% forward error correction requirement can be achieved, showing the proposed fiber laser can be a potential candidate for fiber-wireless applications.

  6. Passive mode locking at harmonics of the free spectral range of the intracavity filter in a fiber ring laser.

    Science.gov (United States)

    Zhang, Shumin; Lu, Fuyun; Dong, Xinyong; Shum, Ping; Yang, Xiufeng; Zhou, Xiaoqun; Gong, Yandong; Lu, Chao

    2005-11-01

    We report the passive mode-locking at harmonics of the free spectral range (FSR) of the intracavity multi-channel filter in a fiber ring laser. The laser uses a sampled fiber Bragg grating (SFBG) with a free spectral range (FSR) of 0.8 nm, or 99 GHz at 1555 nm, and a length of highly nonlinear photonic crystal fiber with low and flat dispersion. Stable picosecond soliton pulse trains with twofold to sevenfold enhancement in the repetition rate, relative to the FSR of the SFBG, have been achieved. The passive mode-locking mechanism that is at play in this laser relies on a dissipative four-wave mixing process and switching of repetition rate is realized simply by adjustment of the intracavity polarization controllers.

  7. Structure of picosecond pulses of a Q-switched and mode-locked diode-pumped Nd:YAG laser

    Science.gov (United States)

    Donin, V. I.; Yakovin, D. V.; Gribanov, A. V.

    2015-12-01

    The pulse duration of a diode-pumped Nd:YAG laser, in which Q-switching with mode-locking (QML regime) is achieved using a spherical mirror and a travelling-wave acousto-optic modulator, is directly measured with a streak camera. It is found that the picosecond pulses can have a non-single-pulse structure, which is explained by excitation of several competing transverse modes in the Q-switching regime with a pulse repetition rate of 1 kHz. In the case of cw mode-locking (without Q-switching), a new (auto-QML) regime is observed, in which the pulse train repetition rate is determined by the frequency of the relaxation oscillations of the laser field while the train contains single picosecond pulses.

  8. Structure of picosecond pulses of a Q-switched and mode-locked diode-pumped Nd:YAG laser

    Energy Technology Data Exchange (ETDEWEB)

    Donin, V I; Yakovin, D V; Gribanov, A V [Institute of Automation and Electrometry, Siberian Branch of the Russian Academy of Sciences, Novosibirsk (Russian Federation)

    2015-12-31

    The pulse duration of a diode-pumped Nd:YAG laser, in which Q-switching with mode-locking (QML regime) is achieved using a spherical mirror and a travelling-wave acousto-optic modulator, is directly measured with a streak camera. It is found that the picosecond pulses can have a non-single-pulse structure, which is explained by excitation of several competing transverse modes in the Q-switching regime with a pulse repetition rate of 1 kHz. In the case of cw mode-locking (without Q-switching), a new (auto-QML) regime is observed, in which the pulse train repetition rate is determined by the frequency of the relaxation oscillations of the laser field while the train contains single picosecond pulses. (control of laser radiation parameters)

  9. Single-shot photonic time-stretch digitizer using a dissipative soliton-based passively mode-locked fiber laser.

    Science.gov (United States)

    Peng, Di; Zhang, Zhiyao; Zeng, Zhen; Zhang, Lingjie; Lyu, Yanjia; Liu, Yong; Xie, Kang

    2018-03-19

    We demonstrate a single-shot photonic time-stretch digitizer using a dissipative soliton-based passively mode-locked fiber laser. The theoretical analysis and simulation results indicate that the dissipative soliton-based optical source with a flat spectrum relieves the envelope-induced signal distortion, and its high energy spectral density helps to improve the signal-to-noise ratio, both of which are favorable for simplifying the optical front-end architecture of a photonic time-stretch digitizer. By employing a homemade dissipative soliton-based passively mode-locked erbium-doped fiber laser in a single-shot photonic time-stretch digitizer, an effective number of bits of 4.11 bits under an effective sampling rate of 100 GS/s is experimentally obtained without optical amplification in the link and pulse envelope removing process.

  10. 256 fs, 2 nJ soliton pulse generation from MoS2 mode-locked fiber laser

    Science.gov (United States)

    Jiang, Zike; Chen, Hao; Li, Jiarong; Yin, Jinde; Wang, Jinzhang; Yan, Peiguang

    2017-12-01

    We demonstrate an Er-doped fiber laser (EDFL) mode-locked by a MoS2 saturable absorber (SA), delivering a 256 fs, 2 nJ soliton pulse at 1563.4 nm. The nonlinear property of the SA prepared by magnetron sputtering deposition (MSD) is measured with a modulation depth (MD) of ∼19.48% and a saturable intensity of 4.14 MW/cm2. To the best of our knowledge, the generated soliton pulse has the highest pulse energy of 2 nJ among the reported mode-locked EDFLs based on transition metal dichalcogenides (TMDs). Our results indicate that MSD-grown SAs could offer an exciting platform for high pulse energy and ultrashort pulse generation.

  11. Hysteresis in the tearing mode locking/unlocking due to resonant magnetic perturbations in EXTRAP T2R

    Science.gov (United States)

    Fridström, R.; Frassinetti, L.; Brunsell, P. R.

    2015-10-01

    The physical mechanisms behind the hysteresis in the tearing mode locking and unlocking to a resonant magnetic perturbation (RMP) are experimentally studied in EXTRAP T2R reversed-field pinch. The experiments show that the electromagnetic and the viscous torque increase with increasing perturbation amplitude until the mode locks to the wall. At the wall-locking, the plasma velocity reduction profile is peaked at the radius where the RMP is resonant. Thereafter, the viscous torque drops due to the relaxation of the velocity in the central plasma. This is the main reason for the hysteresis in the RMP locking and unlocking amplitude. The increased amplitude of the locked tearing mode produces further deepening of the hysteresis. Both experimental results are in qualitative agreement with the model in Fitzpatrick et al (2001 Phys. Plasmas 8 4489)

  12. Free-standing nano-scale graphite saturable absorber for passively mode-locked erbium doped fiber ring laser

    International Nuclear Information System (INIS)

    Lin, Y-H; Lin, G-R

    2012-01-01

    The free-standing graphite nano-particle located between two FC/APC fiber connectors is employed as the saturable absorber to passively mode-lock the ring-type Erbium-doped fiber laser (EDFL). The host-solvent-free graphite nano-particles with sizes of 300 – 500 nm induce a comparable modulation depth of 54%. The interlayer-spacing and lattice fluctuations of polished graphite nano-particles are observed from the weak 2D band of Raman spectrum and the azimuth angle shift of –0.32 ° of {002}-orientation dependent X-ray diffraction peak. The graphite nano-particles mode-locked EDFL generates a 1.67-ps pulsewidth at linearly dispersion-compensated regime with a repetition rate of 9.1 MHz. The time-bandwidth product of 0.325 obtained under a total intra-cavity group-delay-dispersion of –0.017 ps 2 is nearly transform-limited. The extremely high stability of the nano-scale graphite saturable absorber during mode-locking is observed at an intra-cavity optical energy density of 7.54 mJ/cm 2 . This can be attributed to its relatively high damage threshold (one order of magnitude higher than the graphene) on handling the optical energy density inside the EDFL cavity. The graphite nano-particle with reduced size and sufficient coverage ratio can compete with other fast saturable absorbers such as carbon nanotube or graphene to passively mode-lock fiber lasers with decreased insertion loss and lasing threshold

  13. All-fiber passively mode-locked thulium-doped fiber ring oscillator operated at solitary and noiselike modes.

    Science.gov (United States)

    Wang, Q; Chen, T; Zhang, B; Heberle, A P; Chen, K P

    2011-10-01

    This Letter presents an all-fiber mode-locked thulium-doped fiber ring oscillator based on nonlinear polarization evolution (NPE). Pumped by an erbium-doped fiber amplified spontaneous emission source, the construction of the laser cavity consisting of only fiber optic components can operate under two different regimes of solitary and noiselike (NL) pulses. Autocorrelation measurements are performed to extract features of these two regimes. © 2011 Optical Society of America

  14. Rogue waves generation via nonlinear soliton collision in multiple-soliton state of a mode-locked fiber laser.

    Science.gov (United States)

    Peng, Junsong; Tarasov, Nikita; Sugavanam, Srikanth; Churkin, Dmitry

    2016-09-19

    We report for the first time, rogue waves generation in a mode-locked fiber laser that worked in multiple-soliton state in which hundreds of solitons occupied the whole laser cavity. Using real-time spatio-temporal intensity dynamics measurements, it is unveiled that nonlinear soliton collision accounts for the formation of rogue waves in this laser state. The nature of interactions between solitons are also discussed. Our observation may suggest similar formation mechanisms of rogue waves in other systems.

  15. Self-organized compound pattern and pulsation of dissipative solitons in a passively mode-locked fiber laser

    Science.gov (United States)

    Wang, Zhenhong; Wang, Zhi; Liu, Yange; He, Ruijing; Zhao, Jian; Wang, Guangdou; Yang, Guang

    2018-02-01

    We experimentally observe soliton self-organization and pulsation in a passively mode-locked fiber laser. The optomechanical interaction in the optical fiber is key to the formation of equidistant soliton bunches. These solitons simultaneously undergo a pulsation process with a period corresponding to tens of the cavity round trip time. Using the dispersive Fourier transformation technique, we find that the Kelly sidebands in the shot-to-shot spectra appear periodically, synchronizing with the pulsation.

  16. Second-order fractional Talbot effect induced frequency-doubling optical pulse injection for 40 GHz rational-harmonic mode-locking of an SOA fiber laser

    Science.gov (United States)

    Kang, Jung-Jui; Lin, Yung-Hsiang; Lee, Chao-Kuei; Lin, Gong-Ru

    2013-09-01

    A second-order fractional Talbot effect induced frequency-doubling of a 10 GHz optical pulse-train is demonstrated to backward injection mode-lock a semiconductor optical amplifier fiber laser (SOAFL) for 40 GHz rational-harmonic mode-locking (RHML). That is, a real all-optical gain-modulation of the SOAFL can be created by injecting such a time-multiplexed but pseudo-frequency-doubled pulse-train into the cavity. The time-multiplexing pulse-train can thus be transformed into a frequency-multiplied pulse-train via cross-gain modulation (XGM). The optical pulse-train at 10 GHz is generated by nonlinearly driving an electro-absorption modulator (EAM), which experiences the second-order fractional Talbot effect after propagating through a 4 km long dispersion compensation fiber (DCF). The DCF not only plays the role of frequency-doubler but also compensates the frequency chirp of the 10 GHz optical pulse-train. The pulsewidth broadening from 22 to 60 ps for initiating the time-domain Talbot effect is simulated by the nonlinear Schrödinger equation. With careful detuning of the RF modulation power of the EAM at 5 dBm, the generated 20 GHz optical pulse-train exhibits a positive frequency chirp with minimum peak-to-peak value of 2 GHz, and the peak-amplitude fluctuation between adjacent pulses is below 1.4%. In comparison with the SOAFL pulse-train repeated at 40 GHz generated by the fourth-order purely RHML process, the optimized second-order fractional Talbot effect in combination with the second-order RHML mechanism significantly enhances the modulation-depth of RHML, thus improving the on/off extinction ratio of the 40 GHz SOAFL pulse-train from 1.8 to 5.6 dB. Such a new scheme also provides a more stable 40 GHz RHML pulse-train from the SOAFL with its timing jitter reducing from 0.51 to 0.23 ps.

  17. Directly exfoliated and imprinted graphite nano-particle saturable absorber for passive mode-locking erbium-doped fiber laser

    Science.gov (United States)

    Lin, G.-R.; Lin, Y.-C.

    2011-12-01

    By directly brushing and scribing an ultra-thin (face of a FC/APC connector in erbium-doped fiber laser (EDFL), and then imprinting it with the graphite nano-particles exfoliated from a graphite foil, the intra-cavity graphite nano-particle based saturable absorber can be formed to induce passive mode-locking effect in the EDFL. Such a novel approach greatly suppresses the film-thickness induced laser-beam divergent loss to 3.4%, thus enhancing the intra-cavity circulating power to promote the shortening on mode-locking pulsewidth. The saturable absorber with area coverage ratio of graphite nano-particles is detuned from 70 to 25% to provide the modulation depth enhancing from 11 to 20% and the saturated transmittance from 27 to 60%. Optimizing the coverage ratio reduces the non-saturable loss to 40% and enhances the modulation depth to 21%, such that the sub-ps soliton mode-locking can be initiated to provide a chirped pulsewidth of 482 fs and a linewidth of 2.87 nm.

  18. Diverse mode of operation of an all-normal-dispersion mode-locked fiber laser employing two nonlinear loop mirrors.

    Science.gov (United States)

    Chowdhury, Sourav Das; Pal, Atasi; Chatterjee, Sayan; Sen, Ranjan; Pal, Mrinmay

    2018-02-10

    In this paper, we propose an all-normal-dispersion ytterbium-fiber laser with a novel ring cavity architecture having two nonlinear amplifying loop mirrors (NALM) as saturable absorbers, capable of delivering distinctly different pulses with adjustable features. By optimizing the loop lengths of the individual NALMs, the cavity can be operated to deliver Q-switched mode-locked (Q-ML) pulse bunches with adjustable repetition rates, mode-locked pulses in dissipative soliton resonance (DSR) regime or noise-like pulse (NLP) regime with tunable pulse width. The DSR pulses exhibit characteristic narrowband spectrum, while the NLPs exhibit large broadband spectrum. The operation regime of the laser can be controlled by adjusting the amplifier pump powers and the polarization controllers. To the best of the authors' knowledge, this is the first demonstration of a single mode-locked cavity where narrowband DSR pulses and broadband NLPs alongside Q-ML pulse bunches can be selectively generated by employing two NALMs.

  19. Design and Applications of In-Cavity Pulse Shaping by Spectral Sculpturing in Mode-Locked Fibre Lasers

    Directory of Open Access Journals (Sweden)

    Sonia Boscolo

    2015-11-01

    Full Text Available We review our recent progress on the realisation of pulse shaping in passively-mode-locked fibre lasers by inclusion of an amplitude and/or phase spectral filter into the laser cavity. We numerically show that depending on the amplitude transfer function of the in-cavity filter, various regimes of advanced waveform generation can be achieved, including ones featuring parabolic-, flat-top- and triangular-profiled pulses. An application of this approach using a flat-top spectral filter is shown to achieve the direct generation of high-quality sinc-shaped optical Nyquist pulses with a widely tunable bandwidth from the laser oscillator. We also present the operation of an ultrafast fibre laser in which conventional soliton, dispersion-managed soliton (stretched-pulse and dissipative soliton mode-locking regimes can be selectively and reliably targeted by adaptively changing the dispersion profile and bandwidth programmed on an in-cavity programmable filter. The results demonstrate the strong potential of an in-cavity spectral pulse shaper for achieving a high degree of control over the dynamics and output of mode-locked fibre lasers.

  20. FY1995 research on nonlinear optical devices using super-lattice semiconductors; 1995 nendo chokoshi active hisenkei soshi wo mochiita chokosoku hikari seigyo gijutsu no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    The purpose is to develop technologies on efficient generation and control of femtosecond optical pulses using a novel semiconductor optical devices. We studied a modelocked Cr:forsterite laser pumped by a diode pumped Nd:YVO4 laser. Both Kerr lens mode locking and semi-conductor saturable absorber initiated mode locking have been achieved. The minimum pulse width for pure Kerr lens mode locking is 26.4 fs, while for the semiconductor saturable absorber initiated mode locking, the pulse width is 36 fs. The latter is very resistant to the environment perturbations. We also present the measured dispersion data for the forsterite crystal and the SESAM, and discuss the dispersion compensation technique. (NEDO)

  1. The Complex Way to Laser Diode Spectra: Example of an External Cavity Laser With Strong Optical Feedback

    DEFF Research Database (Denmark)

    Detoma, Enrico; Tromborg, Bjarne; Montrosset, Ivo

    2005-01-01

    An external cavity laser with strong grating-filtered feedback to an antireflection-coated facet is studied with a time-domain integral equation for the electric field, which reproduces the modes of the oscillation condition as steady-state solutions. For each mode, the stability and spectral...... to simulate the large signal time evolution after start from unstable modes....

  2. Standoff detection of turbulent chemical mixture plumes using a swept external cavity quantum cascade laser

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, Mark C. [Pacific Northwest National Laboratory, Richland, Washington; Brumfield, Brian E. [Pacific Northwest National Laboratory, Richland, Washington

    2017-08-21

    We demonstrate standoff detection of turbulent mixed-chemical plumes using a broadly-tunable external cavity quantum cascade laser (ECQCL). The ECQCL was directed through plumes of mixed methanol/ethanol vapor to a partially-reflective surface located 10 m away. The reflected power was measured as the ECQCL was swept over its tuning range of 930-1065 cm-1 (9.4-10.8 µm) at rates up to 200 Hz. Analysis of the transmission spectra though the plume was performed to determine chemical concentrations with time resolution of 0.005 s. Comparison of multiple spectral sweep rates of 2 Hz, 20 Hz, and 200 Hz shows that higher sweep rates reduce effects of atmospheric and source turbulence, resulting in lower detection noise and more accurate measurement of the rapidly-changing chemical concentrations. Detection sensitivities of 0.13 ppm*m for MeOH and 1.2 ppm*m for EtOH are demonstrated for a 200 Hz spectral sweep rate, normalized to 1 s detection time.

  3. External cavity-quantum cascade laser (EC-QCL) spectroscopy for protein analysis in bovine milk.

    Science.gov (United States)

    Kuligowski, Julia; Schwaighofer, Andreas; Alcaráz, Mirta Raquel; Quintás, Guillermo; Mayer, Helmut; Vento, Máximo; Lendl, Bernhard

    2017-04-22

    The analytical determination of bovine milk proteins is important in food and non-food industrial applications and yet, rather labour-intensive wet-chemical, low-throughput methods have been employed since decades. This work proposes the use of external cavity-quantum cascade laser (EC-QCL) spectroscopy for the simultaneous quantification of the most abundant bovine milk proteins and the total protein content based on the chemical information contained in mid-infrared (IR) spectral features of the amide I band. Mid-IR spectra of protein standard mixtures were used for building partial least squares (PLS) regression models. Protein concentrations in commercial bovine milk samples were calculated after chemometric compensation of the matrix contribution employing science-based calibration (SBC) without sample pre-processing. The use of EC-QCL spectroscopy together with advanced multivariate data analysis allowed the determination of casein, α-lactalbumin, β-lactoglobulin and total protein content within several minutes. Copyright © 2017 Elsevier B.V. All rights reserved.

  4. A low-temperature external cavity diode laser for broad wavelength tuning

    Science.gov (United States)

    Tobias, William G.; Rosenberg, Jason S.; Hutzler, Nicholas R.; Ni, Kang-Kuen

    2016-11-01

    We report on the design and characterization of a low-temperature external cavity diode laser (ECDL) system for broad wavelength tuning. The performance achieved with multiple diode models addresses the scarcity of commercial red laser diodes below 633 nm, which is a wavelength range relevant to the spectroscopy of many molecules and ions. Using a combination of multiple-stage thermoelectric cooling and water cooling, the operating temperature of a laser diode is lowered to -64 °C, more than 85 °C below the ambient temperature. The laser system integrates temperature and diffraction grating feedback tunability for coarse and fine wavelength adjustments, respectively. For two different diode models, single-mode operation is achieved with 38 mW output power at 616.8 nm and 69 mW at 622.6 nm, more than 15 nm below their ambient temperature free-running wavelengths. The ECDL design can be used for diodes of any available wavelength, allowing individual diodes to be tuned continuously over tens of nanometers and extending the wavelength coverage of commercial laser diodes.

  5. Fast quantification of bovine milk proteins employing external cavity-quantum cascade laser spectroscopy.

    Science.gov (United States)

    Schwaighofer, Andreas; Kuligowski, Julia; Quintás, Guillermo; Mayer, Helmut K; Lendl, Bernhard

    2018-06-30

    Analysis of proteins in bovine milk is usually tackled by time-consuming analytical approaches involving wet-chemical, multi-step sample clean-up procedures. The use of external cavity-quantum cascade laser (EC-QCL) based IR spectroscopy was evaluated as an alternative screening tool for direct and simultaneous quantification of individual proteins (i.e. casein and β-lactoglobulin) and total protein content in commercial bovine milk samples. Mid-IR spectra of protein standard mixtures were used for building partial least squares (PLS) regression models. A sample set comprising different milk types (pasteurized; differently processed extended shelf life, ESL; ultra-high temperature, UHT) was analysed and results were compared to reference methods. Concentration values of the QCL-IR spectroscopy approach obtained within several minutes are in good agreement with reference methods involving multiple sample preparation steps. The potential application as a fast screening method for estimating the heat load applied to liquid milk is demonstrated. Copyright © 2018 Elsevier Ltd. All rights reserved.

  6. Dual-wavelength external cavity laser device for fluorescence suppression in Raman spectroscopy

    Science.gov (United States)

    Zhang, Xuting; Cai, Zhijian; Wu, Jianhong

    2017-10-01

    Raman spectroscopy has been widely used in the detection of drugs, pesticides, explosives, food additives and environmental pollutants, for its characteristics of fast measurement, easy sample preparation, and molecular structure analyzing capability. However, fluorescence disturbance brings a big trouble to these applications, with strong fluorescence background covering up the weak Raman signals. Recently shifted excitation Raman difference spectroscopy (SERDS) not only can completely remove the fluorescence background, but also can be easily integrated into portable Raman spectrometers. Usually, SERDS uses two lasers with small wavelength gap to excite the sample, then acquires two spectra, and subtracts one to the other to get the difference spectrum, where the fluorescence background will be rejected. So, one key aspects of successfully applying SERDS method is to obtain a dual-wavelength laser source. In this paper, a dual-wavelength laser device design based on the principles of external cavity diode laser (ECDL) is proposed, which is low-cost and compact. In addition, it has good mechanical stability because of no moving parts. These features make it an ideal laser source for SERDS technique. The experiment results showed that the device can emit narrow-spectral-width lasers of two wavelengths, with the gap smaller than 2 nanometers. The laser power corresponding to each wavelength can be up to 100mW.

  7. Q-switched-like soliton bunches and noise-like pulses generation in a partially mode-locked fiber laser.

    Science.gov (United States)

    Wang, Zhenhong; Wang, Zhi; Liu, Yan-Ge; Zhao, Wenjing; Zhang, Hao; Wang, Shangcheng; Yang, Guang; He, Ruijing

    2016-06-27

    We report an intermediate regime between c.w. emission and noise-like pulses (NLPs) regime in an Er-doped partially mode-locked fiber laser with nonlinear polarization rotation. In this regime, the soliton bunches stochastically turn up from a quasi-cw background in the Q-switched-like envelope. The soliton bunches normally last for tens or hundreds of intracavity round-trips. When the soliton bunches vanish, typical NLPs chains are generated sporadically at location where the soliton bunches collapses. These results would be helpful to understand the generation and property of the NLPs regime.

  8. Time-Gating Processes in Intra-Cavity Mode-Locking Devices Like Saturable Absorbers and Kerr Cells

    Science.gov (United States)

    Prasad, Narasimha; Roychoudhuri, Chandrasekhar

    2010-01-01

    Photons are non-interacting entities. Light beams do not interfere by themselves. Light beams constituting different laser modes (frequencies) are not capable of re-arranging their energies from extended time-domain to ultra-short time-domain by themselves without the aid of light-matter interactions with suitable intra-cavity devices. In this paper we will discuss the time-gating properties of intra-cavity "mode-locking" devices that actually help generate a regular train of high energy wave packets.

  9. 5-μm vertical external-cavity surface-emitting laser (VECSEL) for spectroscopic applications

    Science.gov (United States)

    Rahim, M.; Khiar, A.; Felder, F.; Fill, M.; Zogg, H.; Sigrist, M. W.

    2010-08-01

    Mid-IR tunable VECSELs (Vertical External-Cavity Surface-Emitting Lasers) emitting at 4-7 μm wavelengths and suitable for spectroscopic sensing applications are described. They are realized with lead-chalcogenide (IV-VI) narrow band gap materials. The active part, a single 0.6-2-μm thick PbTe or PbSe gain layer, is grown onto an epitaxial Bragg mirror consisting of two or three Pb1- y Eu y Te/BaF2 quarter-wavelength layer pairs. All layers are deposited by MBE in a single run employing a BaF2 or Si substrate, no further processing is needed. The cavity is completed with an external curved top mirror, which is again realized with an epitaxial Bragg structure. Pumping is performed optically with a 1.5-μm laser. Maximum output power for pulsed operation is currently up to >1 Wp at -173°C and >10 mW at 10°C. In continuous wave (CW) operation, 18 mW at 100 K are reached. Still higher operating temperatures and/or powers are expected with better heat-removal structures and better designs employing QW (Quantum-Wells). Advantages of mid-IR VECSELs compared to edge-emitting lasers are their very good beam quality (circular beam with 15 μm are accessible with Pb1- y X y Z (X=Sr, Eu, Sn, Z=Se, Te) and/or including QW.

  10. External cavity cascade diode lasers tunable from 3.05 to 3.25 μm

    Science.gov (United States)

    Wang, Meng; Hosoda, Takashi; Shterengas, Leon; Kipshidze, Gela; Lu, Ming; Stein, Aaron; Belenky, Gregory

    2018-01-01

    The external cavity tunable mid-infrared emitters based on Littrow configuration and utilizing three stages type-I quantum well cascade diode laser gain elements were designed and fabricated. The free-standing coated 7.5-μm-wide ridge waveguide lasers generated more than 30 mW of continuous wave power near 3.25 μm at 20°C when mounted epi-side-up on copper blocks. The external cavity lasers (ECLs) utilized 2-mm-long gain chips with straight ridge design and anti-/neutral-reflection coated facets. The ECLs demonstrated narrow spectrum tunable operation with several milliwatts of output power in spectral region from 3.05 to 3.25 μm corresponding to ˜25 meV of tuning range.

  11. Broadband Fourier domain mode-locked laser for optical coherence tomography at 1060 nm

    DEFF Research Database (Denmark)

    Marschall, Sebastian; Klein, Thomas; Wieser, Wolfgang

    2012-01-01

    , enable acquisition of densely sampled three-dimensional datasets covering a wide field of view. However, semiconductor optical amplifiers (SOAs)-the typical laser gain media for swept sources-for the 1060nm band could until recently only provide relatively low output power and bandwidth. We have...

  12. Femtosecond mode-locked erbium-doped fiber laser based on MoS2-PVA saturable absorber

    Science.gov (United States)

    Ahmed, M. H. M.; Latiff, A. A.; Arof, H.; Ahmad, H.; Harun, S. W.

    2016-08-01

    We fabricate a free-standing few-layer molybdenum disulfide (MoS2)-polymer composite by liquid phase exfoliation of chemically pristine MoS2 crystals and use this to demonstrate a soliton mode-locked Erbium-doped fiber laser (EDFL). A stable self-started mode-locked soliton pulse is generated by fine-tuning the rotation of the polarization controller at a low threshold pump power of 25 mW. Its solitonic behavior is verified by the presence of Kelly sidebands in the output spectrum. The central wavelength, pulse width, and repetition rate of the laser are 1573.7 nm, 630 fs, and 27.1 MHz, respectively. The maximum pulse energy is 0.141 nJ with peak power of 210 W at pump power of 170 mW. This result contributes to the growing body of work studying the nonlinear optical properties of transition metal dichalcogenides that present new opportunities for ultrafast photonic applications.

  13. Continuous-wave to pulse regimes for a family of passively mode-locked lasers with saturable nonlinearity

    Science.gov (United States)

    Dikandé, Alain M.; Voma Titafan, J.; Essimbi, B. Z.

    2017-10-01

    The transition dynamics from continuous-wave to pulse regimes of operation for a generic model of passively mode-locked lasers with saturable absorbers, characterized by an active medium with non-Kerr nonlinearity, are investigated analytically and numerically. The system is described by a complex Ginzburg-Landau equation with a general m:n saturable nonlinearity (i.e {I}m/{(1+{{Γ }}I)}n, where I is the field intensity and m and n are two positive numbers), coupled to a two-level gain equation. An analysis of stability of continuous waves, following the modulational instability approach, provides a global picture of the self-starting dynamics in the system. The analysis reveals two distinct routes depending on values of the couple (m, n), and on the dispersion regime: in the normal dispersion regime, when m = 2 and n is arbitrary, the self-starting requires positive values of the fast saturable absorber and nonlinearity coefficients, but negative values of these two parameters for the family with m = 0. However, when the spectral filter is negative, the laser can self-start for certain values of the input field and the nonlinearity saturation coefficient Γ. The present work provides a general map for the self-starting mechanisms of rare-earth doped figure-eight fiber lasers, as well as Kerr-lens mode-locked solid-state lasers.

  14. Q-switching and mode-locking pulse generation with graphene oxide paper-based saturable absorber

    Directory of Open Access Journals (Sweden)

    Sulaiman Wadi Harun

    2015-06-01

    Full Text Available Q-switched and mode-locked erbium-doped fibre lasers (EDFLs are demonstrated by using non-conductive graphene oxide (GO paper as a saturable absorber (SA. A stable and self-starting Q-switched operation was achieved at 1534.4 nm by using a 0.8 m long erbium-doped fibre (EDF as a gain medium. The pulse repetition rate changed from 14.3 to 31.5 kHz, whereas the corresponding pulse width decreased from 32.8 to 13.8 µs as the pump power increased from 22 to 50.5 mW. A narrow spacing dual-wavelength Q-switched EDFL could also be realised by including a photonics crystal fibre and a tunable Bragg filter in the setup. It can operate at a maximum repetition rate of 31 kHz, with a pulse duration of 7.04 µs and pulse energy of 2.8 nJ. Another GOSA was used to realise mode-locked EDFL in a different cavity consisting of a 1.6 m long EDF in conjunction with 1480 nm pumping. The laser generated a soliton pulse train with a repetition rate of 15.62 MHz and pulse width of 870 fs. It is observed that the proposed fibre lasers have a low pulsing threshold pump power as well as a low damage threshold.

  15. Simulation of dissipative-soliton-resonance generation in a passively mode-locked Yb-doped fiber laser

    Science.gov (United States)

    Du, Wenxiong; Li, Heping; Liu, Cong; Shen, Shengnan; Zhang, Shangjian; Liu, Yong

    2017-10-01

    We present a numerical investigation of dissipative-soliton-resonance (DSR) generation in an all-normal-dispersion Ybdoped fiber laser mode-locked by a real saturable absorber (SA). In the simulation model, the SA includes both the saturable absorption and excited-state absorption (ESA) effects. The intra-cavity pulse evolution is numerically simulated with different transmission functions of SA. When omitting the ESA effect, the transmissivity of SA increases monotonically with the input pulse power. The noise-like pulse (NLP) operation in the cavity is obtained at high pump power, which is attributed to the spectral filtering effect. When the ESA effect is activated, higher instantaneous power part of pulse encounters larger loss induced by SA, causing that the pulse peak power is clamped at a certain fixed value. With increasing pump, the pulse starts to extend in the time domain while the pulse spectrum is considerably narrowed. In this case, the NLP operation state induced by the spectral filtering effect is avoided and the DSR is generated. Our simulation results indicate that the ESA effect in the SA plays a dominant role in generating the DSR pulses, which will be conducive to comprehending the mechanism of DSR generation in passively mode-locked fiber lasers.

  16. Mode-Locked Multichromatic X-Rays in a Seeded Free-Electron Laser for Single-Shot X-Ray Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Xiang, Dao; Ding, Yuantao; Raubenheimer, Tor; Wu, Juhao; /SLAC

    2012-05-10

    We present the promise of generating gigawatt mode-locked multichromatic x rays in a seeded free-electron laser (FEL). We show that, by using a laser to imprint periodic modulation in electron beam phase space, a single-frequency coherent seed can be amplified and further translated to a mode-locked multichromatic output in an FEL. With this configuration the FEL output consists of a train of mode-locked ultrashort pulses which span a wide frequency gap with a series of equally spaced sharp lines. These gigawatt multichromatic x rays may potentially allow one to explore the structure and dynamics of a large number of atomic states simultaneously. The feasibility of generating mode-locked x rays ranging from carbon K edge ({approx}284 eV) to copper L{sub 3} edge ({approx}931 eV) is confirmed with numerical simulation using the realistic parameters of the linac coherent light source (LCLS) and LCLS-II. We anticipate that the mode-locked multichromatic x rays in FELs may open up new opportunities in x-ray spectroscopy (i.e. resonant inelastic x-ray scattering, time-resolved scattering and spectroscopy, etc.).

  17. Soliton compression of the erbium-doped fiber laser weakly started mode-locking by nanoscale p-type Bi2Te3 topological insulator particles

    Science.gov (United States)

    Lin, Yung-Hsiang; Yang, Chun-Yu; Lin, Sheng-Feng; Tseng, Wei-Hsuan; Bao, Qiaoliang; Wu, Chih-I.; Lin, Gong-Ru

    2014-05-01

    We demonstrate the nanoscale p-type Bi2Te3 powder-based saturable absorber-induced passive mode-locking of the erbium-doped fiber laser (EDFL) with sub-picosecond pulsewidth. Such a nanoscale topological insulator powder is obtained by polishing the bulk p-type Bi2Te3 in a commercial thermoelectric cooler (TE cooler). This is then directly brushed onto the end-face of a single-mode fiber patchcord, to avoid any mis-connecting loss caused by laser beam divergence, which can result in a mode-locked pulsewidth of 436 fs in the self-amplitude modulation mode of a TE cooler. To further shorten the pulse, the soliton compression is operated by well-controlling the group delay dispersion and self-phase modulation, providing the passively mode-locked EDFL with a pulsewidth as short as 403 fs.

  18. Intracavity KTP-based OPO pumped by a dual-loss modulated, simultaneously Q-switched and mode-locked Nd:GGG laser.

    Science.gov (United States)

    Chu, Hongwei; Zhao, Shengzhi; Yang, Kejian; Zhao, Jia; Li, Yufei; Li, Dechun; Li, Guiqiu; Li, Tao; Qiao, Wenchao

    2014-11-03

    An intracavity KTiOPO(4) (KTP) optical parametric oscillator (OPO) pumped by a simultaneously Q-switched and mode-locked (QML) Nd:Gd(3)Ga(5)O(12) (Nd:GGG) laser with an acousto-optic modulator (AOM) and a Cr(4+):YAG saturable absorber is presented. A minimum mode-locking pulse duration underneath the Q-switched envelope was evaluated to be about 290 ps. A maximum QML output power of 82 mW at the signal wavelength of 1570 nm was achieved, corresponding to a maximum mode-locked pulse energy of about 5.12 μJ. The M(2) values were measured to be about 1.3 and 1.5 for tangential and sagittal directions using knife-edge technique.

  19. Passive harmonic mode-locking of Er-doped fiber laser using CVD-grown few-layer MoS2 as a saturable absorber

    International Nuclear Information System (INIS)

    Xia Han-Ding; Li He-Ping; Lan Chang-Yong; Li Chun; Deng Guang-Lei; Li Jian-Feng; Liu Yong

    2015-01-01

    Passive harmonic mode locking of an erbium-doped fiber laser based on few-layer molybdenum disulfide (MoS 2 ) saturable absorber (SA) is demonstrated. The few-layer MoS 2 is prepared by the chemical vapor deposition (CVD) method and then transferred onto the end face of a fiber connector to form a fiber-compatible MoS 2 SA. The 20th harmonic mode-locked pulses at 216-MHz repetition rate are stably generated with a pulse duration of 1.42 ps and side-mode suppression ratio (SMSR) of 36.1 dB. The results confirm that few-layer MoS 2 can serve as an effective SA for mode-locked fiber lasers. (paper)

  20. Tunable and switchable dual-wavelength passively mode-locked Bi-doped all-fiber ring laser based on nonlinear polarization rotation

    International Nuclear Information System (INIS)

    Luo, A-P; Luo, Z-C; Xu, W-C; Dvoyrin, V V; Mashinsky, V M; Dianov, E M

    2011-01-01

    We demonstrate a tunable and switchable dual-wavelength passively mode-locked Bi-doped all-fiber ring laser by using nonlinear polarization rotation (NPR) technique. Exploiting the spectral filtering effect caused by the combination of the polarizer and intracavity birefringence, the wavelength separation of dual-wavelength mode-locked pulses can be flexibly tuned between 2.38 and 20.45 nm. Taking the advantage of NPR-induced intensity-dependent loss to suppress the mode competition, the stable dual-wavelength pulses output is obtained at room temperature. Moreover, the dual-wavelength switchable operation is achieved by simply rotating the polarization controllers (PCs)

  1. 50-fs pulse generation directly from a colliding-pulse mode-locked Ti:sapphire laser using an antiresonant ring mirror

    Science.gov (United States)

    Naganuma, Kazunori; Mogi, Kazuo

    1991-05-01

    50-fs pulses were directly generated from a colliding-pulse mode-locked Ti:sapphire laser. To achieve the colliding-pulse mode locking, a miniature antiresonant ring containing an organic saturable dye jet was employed as the end mirror for the linear cavity laser. Based on measured dispersion of intracavity elements, a prism pair was implemented to control the cavity dispersion. The generated pulses have no linear chirp but do exhibit parabolic instantaneous frequency owing to third-order dispersion introduced by the prism pair.

  2. Properties of the pulse train generated by repetition-rate-doubling rational-harmonic actively mode-locked Er-doped fiber lasers.

    Science.gov (United States)

    Kiyan, R; Deparis, O; Pottiez, O; Mégret, P; Blondel, M

    2000-10-01

    We demonstrate for the first time to our knowledge, experimentally and theoretically, that the pulse-to-pulse amplitude fluctuations that occur in pulse trains generated by actively mode-locked Er-doped fiber lasers in a repetition-rate-doubling rational-harmonic mode-locking regime are completely eliminated when the modulation frequency is properly tuned. Irregularity of the pulse position in the train was found to be the only drawback of this regime. One could reduce the irregularity to a value acceptable for applications by increasing the bandwidth of the optical filter installed in the laser cavity.

  3. Generation of a 64-GHz, 3.3-ps transform-limited pulse train from a fiber laser employing higher-order frequency-modulated mode locking.

    Science.gov (United States)

    Abedin, K S; Onodera, N; Hyodo, M

    1999-11-15

    We demonstrate the generation of optical pulses at a repetition rate of 64 GHz directly from a frequency-modulated (FM) mode-locked fiber laser. This is achieved by phase modulation at 16 GHz and by initiating of higher-order FM mode locking by use of an intracavity Fabry-Perot filter with a free spectral range of 64 GHz. This process yielded transform-limited pulses with a width of 3.3 ps. We investigated the operating characteristics of the laser and compared them with the characteristics that were predicted theoretically.

  4. Study of simulations q-switching and mode-locking in Nd:YVO4 laser with Cr4+:YAG crystal

    International Nuclear Information System (INIS)

    Al-Sous, M. B.

    2007-12-01

    A numerical model of rate equations for a four-level solid-state laser with Cr 4+ :YAG saturable absorber including excited state absorption ESA is presented. The cavity is divided into a large number of disks and the model is solved for each disk and its local corresponding photon flux. The flux array is shifted for each recurrence simulating the movement of photons inside the cavity during the round trip. This simulator can describe the mode locking phenomenon and can be used to simulate the simultaneous mode locking and Q-switching with a saturable absorber.(author)

  5. Passively mode-locked diode-pumped Tm3+:YLF laser emitting at 1.91 µm using a GaAs-based SESAM

    Science.gov (United States)

    Tyazhev, A.; Soulard, R.; Godin, T.; Paris, M.; Brasse, G.; Doualan, J.-L.; Braud, A.; Moncorgé, R.; Laroche, M.; Camy, P.; Hideur, A.

    2018-04-01

    We report on a diode-pumped Tm:YLF laser passively mode-locked with an InGaAs saturable absorber. The laser emits a train of 31 ps pulses at a wavelength of 1.91 µm with a repetition rate of 94 MHz and a maximum average power of 95 mW. A sustained and robust mode-locking with a signal-to-noise ratio of ~70 dB is obtained even at high relative air humidity, making this system attractive for applications requiring ultra-short pulses in the spectral window just below 2 µm.

  6. Widely Tunable Mode-Hop-Free External-Cavity Quantum Cascade Laser

    Science.gov (United States)

    Wysocki, Gerard; Curl, Robert F.; Tittel, Frank K.

    2010-01-01

    The external-cavity quantum cascade laser (EC-QCL) system is based on an optical configuration of the Littrow type. It is a room-temperature, continuous wave, widely tunable, mode-hop-free, mid-infrared, EC-QCL spectroscopic source. It has a single-mode tuning range of 155 cm(exp -1) (approximately equal to 8% of the center wavelength) with a maximum power of 11.1 mW and 182 cm(exp -1) (approximately equal to 15% of the center wavelength), and a maximum power of 50 mW as demonstrated for 5.3 micron and 8.4 micron EC-QCLs, respectively. This technology is particularly suitable for high-resolution spectroscopic applications, multi-species tracegas detection, and spectroscopic measurements of broadband absorbers. Wavelength tuning of EC-QCL spectroscopic source can be implemented by varying three independent parameters of the laser: (1) the optical length of the gain medium (which, in this case, is equivalent to QCL injection current modulation), (2) the length of the EC (which can be independently varied in the Rice EC-QCL setup), and (3) the angle of beam incidence at the diffraction grating (frequency tuning related directly to angular dispersion of the grating). All three mechanisms of frequency tuning have been demonstrated and are required to obtain a true mode-hop-free laser frequency tuning. The precise frequency tuning characteristics of the EC-QCL output have been characterized using a variety of diagnostic tools available at Rice University (e.g., a monochromator, FTIR spectrometer, and a Fabry-Perot spectrometer). Spectroscopic results were compared with available databases (such as HITRAN, PNNL, EPA, and NIST). These enable precision verification of complete spectral parameters of the EC-QCL, such as wavelength, tuning range, tuning characteristics, and line width. The output power of the EC-QCL is determined by the performance of the QC laser chip, its operating conditions, and parameters of the QC laser cavity such as mirror reflectivity or intracavity

  7. Passive mode locking and formation of dissipative solitons in electron oscillators with a bleaching absorber in the feedback loop

    Energy Technology Data Exchange (ETDEWEB)

    Ginzburg, N. S., E-mail: ginzburg@appl.sci-nnov.ru; Kocharovskaya, E. R.; Vilkov, M. N.; Sergeev, A. S. [Russian Academy of Sciences, Institute of Applied Physics (Russian Federation)

    2017-01-15

    The mechanisms of passive mode locking and formation of ultrashort pulses in microwave electron oscillators with a bleaching absorber in the feedback loop have been analyzed. It is shown that in the group synchronism regime in which the translational velocity of particles coincides with the group velocity of the electromagnetic wave, the pulse formation can be described by the equations known in the theory of dissipative solitons. At the same time, the regimes in which the translational velocity of electrons differs from the group velocity and the soliton being formed and moving along the electron beam consecutively (cumulatively) receives energy from various electron fractions are optimal for generating pulses with the maximal peak amplitudes.

  8. Vector nature of multi-soliton patterns in a passively mode-locked figure-eight fiber laser.

    Science.gov (United States)

    Ning, Qiu-Yi; Liu, Hao; Zheng, Xu-Wu; Yu, Wei; Luo, Ai-Ping; Huang, Xu-Guang; Luo, Zhi-Chao; Xu, Wen-Cheng; Xu, Shan-Hui; Yang, Zhong-Min

    2014-05-19

    The vector nature of multi-soliton dynamic patterns was investigated in a passively mode-locked figure-eight fiber laser based on the nonlinear amplifying loop mirror (NALM). By properly adjusting the cavity parameters such as the pump power level and intra-cavity polarization controllers (PCs), in addition to the fundamental vector soliton, various vector multi-soliton regimes were observed, such as the random static distribution of vector multiple solitons, vector soliton cluster, vector soliton flow, and the state of vector multiple solitons occupying the whole cavity. Both the polarization-locked vector solitons (PLVSs) and the polarization-rotating vector solitons (PRVSs) were observed for fundamental soliton and each type of multi-soliton patterns. The obtained results further reveal the fundamental physics of multi-soliton patterns and demonstrate that the figure-eight fiber lasers are indeed a good platform for investigating the vector nature of different soliton types.

  9. Ultrashort pulse generation in mode-locked erbium-doped fiber lasers with tungsten disulfide saturable absorber

    Science.gov (United States)

    Liu, Mengli; Liu, Wenjun; Pang, Lihui; Teng, Hao; Fang, Shaobo; Wei, Zhiyi

    2018-01-01

    Tungsten disulfide (WS2), as one of typical transition metal dichalcogenides with the characteristics of strong nonlinear polarization and wide bandgap, has been widely used in such fields as biology and optoelectronics. With the magnetron sputtering technique, the saturable absorber (SA) is prepared by depositing WS2 and Au film on the tapered fiber. The heat elimination and damage threshold can be improved for the WS2 SA with evanescent field interaction. Besides, the Au film is deposited on the surface of the WS2 film to improve their reliability and avoid being oxidized. The fabricated SA has a modulation depth of 14.79%. With this SA, we obtain a relatively stable mode-locked fiber laser with the pulse duration of 288 fs, the repetition rate of 41.4 MHz and the signal to noise ratio of 58 dB.

  10. Mode-locked thin-disk lasers and their potential application for high-power terahertz generation

    Science.gov (United States)

    Saraceno, Clara J.

    2018-04-01

    The progress achieved in the last few decades in the performance of ultrafast laser systems with high average power has been tremendous, and continues to provide momentum to new exciting applications, both in scientific research and technology. Among the various technological advances that have shaped this progress, mode-locked thin-disk oscillators have attracted significant attention as a unique technology capable of providing ultrashort pulses with high energy (tens to hundreds of microjoules) and at very high repetition rates (in the megahertz regime) from a single table-top oscillator. This technology opens the door to compact high repetition rate ultrafast sources spanning the entire electromagnetic spectrum from the XUV to the terahertz regime, opening various new application fields. In this article, we focus on their unexplored potential as compact driving sources for high average power terahertz generation.

  11. 80  nJ ultrafast dissipative soliton generation in dumbbell-shaped mode-locked fiber laser.

    Science.gov (United States)

    Chen, He; Chen, Sheng-Ping; Jiang, Zong-Fu; Hou, Jing

    2016-09-15

    A novel all-fiberized dumbbell-shaped mode-locked fiber laser was developed to directly generate 80 nJ dissipative solitons, which can be linearly compressed from 85 to 1.2 ps externally with a diffraction grating pair. The pulse peak power reached 42 kW after compression. With the most available pump power, stable dissipative soliton bundles with up to 628 nJ bundle energy were obtained. The corresponding average output power reached 2.2 W. The employment of dual-nonlinear-optical-loop mirrors and large-mode-area fibers in the cavity played an essential role in improving structural compactness and producing high-energy ultrafast pulses. To the best of our knowledge, these are the most energetic compressible dissipative solitons generated from a strictly all-fiber cavity.

  12. Real-time full-field characterization of transient dissipative soliton dynamics in a mode-locked laser

    Science.gov (United States)

    Ryczkowski, P.; Närhi, M.; Billet, C.; Merolla, J.-M.; Genty, G.; Dudley, J. M.

    2018-04-01

    Dissipative solitons are remarkably localized states of a physical system that arise from the dynamical balance between nonlinearity, dispersion and environmental energy exchange. They are the most universal form of soliton that can exist, and are seen in far-from-equilibrium systems in many fields, including chemistry, biology and physics. There has been particular interest in studying their properties in mode-locked lasers, but experiments have been limited by the inability to track the dynamical soliton evolution in real time. Here, we use simultaneous dispersive Fourier transform and time-lens measurements to completely characterize the spectral and temporal evolution of ultrashort dissipative solitons as their dynamics pass through a transient unstable regime with complex break-up and collisions before stabilization. Further insight is obtained from reconstruction of the soliton amplitude and phase and calculation of the corresponding complex-valued eigenvalue spectrum. These findings show how real-time measurements provide new insights into ultrafast transient dynamics in optics.

  13. Continuous multispectral imaging of surface phonon polaritons on silicon carbide with an external cavity quantum cascade laser

    Science.gov (United States)

    Dougakiuchi, Tatsuo; Kawada, Yoichi; Takebe, Gen

    2018-03-01

    We demonstrate the continuous multispectral imaging of surface phonon polaritons (SPhPs) on silicon carbide excited by an external cavity quantum cascade laser using scattering-type scanning near-field optical microscopy. The launched SPhPs were well characterized via the confirmation that the theoretical dispersion relation and measured in-plane wave vectors are in excellent agreement in the entire measurement range. The proposed scheme, which can excite and observe SPhPs with an arbitrary wavelength that effectively covers the spectral gap of CO2 lasers, is expected to be applicable for studies of near-field optics and for various applications based on SPhPs.

  14. Highly Selective Volatile Organic Compounds Breath Analysis Using a Broadly-Tunable Vertical-External-Cavity Surface-Emitting Laser.

    Science.gov (United States)

    Tuzson, Béla; Jágerská, Jana; Looser, Herbert; Graf, Manuel; Felder, Ferdinand; Fill, Matthias; Tappy, Luc; Emmenegger, Lukas

    2017-06-20

    A broadly tunable mid-infrared vertical-external-cavity surface-emitting laser (VECSEL) is employed in a direct absorption laser spectroscopic setup to measure breath acetone. The large wavelength coverage of more than 30 cm -1 at 3.38 μm allows, in addition to acetone, the simultaneous measurement of isoprene, ethanol, methanol, methane, and water. Despite the severe spectral interferences from water and alcohols, an unambiguous determination of acetone is demonstrated with a precision of 13 ppbv that is achieved after 5 min averaging at typical breath mean acetone levels in synthetic gas samples mimicking human breath.

  15. 4.5 μm wavelength vertical external cavity surface emitting laser operating above room temperature

    Science.gov (United States)

    Rahim, M.; Khiar, A.; Felder, F.; Fill, M.; Zogg, H.

    2009-05-01

    A midinfrared vertical external cavity surface emitting laser with 4.5 μm emission wavelength and operating above room temperature has been realized. The active part consists of a single 850 nm thick epitaxial PbSe gain layer. It is followed by a 2 1/2 pair Pb1-yEuyTe/BaF2 Bragg mirror. No microstructural processing is needed. Excitation is done optically with a 1.5 μm wavelength laser. The device operates up to 45 °C with 100 ns pulses and delivers 6 mW output power at 27 °C heat-sink temperature.

  16. Comparison of symmetric and asymmetric double quantum well extended-cavity diode lasers for broadband passive mode-locking at 780  nm.

    Science.gov (United States)

    Christopher, Heike; Kovalchuk, Evgeny V; Wenzel, Hans; Bugge, Frank; Weyers, Markus; Wicht, Andreas; Peters, Achim; Tränkle, Günther

    2017-07-01

    We present a compact, mode-locked diode laser system designed to emit a frequency comb in the wavelength range around 780 nm. We compare the mode-locking performance of symmetric and asymmetric double quantum well ridge-waveguide diode laser chips in an extended-cavity diode laser configuration. By reverse biasing a short section of the diode laser chip, passive mode-locking at 3.4 GHz is achieved. Employing an asymmetric double quantum well allows for generation of a mode-locked optical spectrum spanning more than 15 nm (full width at -20  dB) while the symmetric double quantum well device only provides a bandwidth of ∼2.7  nm (full width at -20  dB). Analysis of the RF noise characteristics of the pulse repetition rate shows an RF linewidth of about 7 kHz (full width at half-maximum) and of at most 530 Hz (full width at half-maximum) for the asymmetric and symmetric double quantum well devices, respectively. Investigation of the frequency noise power spectral density at the pulse repetition rate shows a white noise floor of approximately 2100  Hz 2 /Hz and of at most 170  Hz 2 /Hz for the diode laser employing the asymmetric and symmetric double quantum well structures, respectively. The pulse width is less than 10 ps for both devices.

  17. Observation of phase noise reduction in photonically synthesized sub-THz signals using a passively mode-locked laser diode and highly selective optical filtering

    DEFF Research Database (Denmark)

    Criado, A. R.; Acedo, P.; Carpintero, G.

    2012-01-01

    A Continuous Wave (CW) sub-THz photonic synthesis setup based on a single Passively Mode-Locked Laser Diode (PMLLD) acting as a monolithic Optical Frequency Comb Generator (OFCG) and highly selective optical filtering has been implemented to evaluate the phase noise performance of the generated sub...

  18. Robust, low-noise, polarization-maintaining mode-locked Er-fiber laser with a planar lightwave circuit (PLC) device as a multi-functional element.

    Science.gov (United States)

    Kim, Chur; Kwon, Dohyeon; Kim, Dohyun; Choi, Sun Young; Cha, Sang Jun; Choi, Ki Sun; Yeom, Dong-Il; Rotermund, Fabian; Kim, Jungwon

    2017-04-15

    We demonstrate a new planar lightwave circuit (PLC)-based device, integrated with a 980/1550 wavelength division multiplexer, an evanescent-field-interaction-based saturable absorber, and an output tap coupler, which can be employed as a multi-functional element in mode-locked fiber lasers. Using this multi-functional PLC device, we demonstrate a simple, robust, low-noise, and polarization-maintaining mode-locked Er-fiber laser. The measured full-width at half-maximum bandwidth is 6 nm centered at 1555 nm, corresponding to 217 fs transform-limited pulse duration. The measured RIN and timing jitter are 0.22% [10 Hz-10 MHz] and 6.6 fs [10 kHz-1 MHz], respectively. Our results show that the non-gain section of mode-locked fiber lasers can be easily implemented as a single PLC chip that can be manufactured by a wafer-scale fabrication process. The use of PLC processes in mode-locked lasers has the potential for higher manufacturability of low-cost and robust fiber and waveguide lasers.

  19. 40-gHz, 100-fs stimulated-Brillouin-scattering-free pulse generation by combining a mode-locked laser diode and a dispersion-decreasing fiber.

    Science.gov (United States)

    Hagiuda, Ken-ichi; Hirooka, Toshihiko; Nakazawa, Masataka; Arahira, Shin; Ogawa, Yoh

    2005-03-15

    A 40-GHz, 100-fs pulse train was successfully generated by soliton compression of a mode-locked laser diode (MLLD) pulse with a dispersion-decreasing fiber. The MLLD had a longitudinal mode linewidth as broad as 60 MHz, which made it possible to suppress stimulated Brillouin scattering and achieve stable, ultrahigh-speed pulse compression without applying external frequency modulation.

  20. 110 GHz hybrid mode-locked fiber laser with enhanced extinction ratio based on nonlinear silicon-on-insulator micro-ring-resonator (SOI MRR)

    Science.gov (United States)

    Liu, Yang; Hsu, Yung; Chow, Chi-Wai; Yang, Ling-Gang; Yeh, Chien-Hung; Lai, Yin-Chieh; Tsang, Hon-Ki

    2016-03-01

    We propose and experimentally demonstrate a new 110 GHz high-repetition-rate hybrid mode-locked fiber laser using a silicon-on-insulator microring-resonator (SOI MRR) acting as the optical nonlinear element and optical comb filter simultaneously. By incorporating a phase modulator (PM) that is electrically driven at a fraction of the harmonic frequency, an enhanced extinction ratio (ER) of the optical pulses can be produced. The ER of the optical pulse train increases from 3 dB to 10 dB. As the PM is only electrically driven by the signal at a fraction of the harmonic frequency, in this case 22 GHz (110 GHz/5 GHz), a low bandwidth PM and driving circuit can be used. The mode-locked pulse width and the 3 dB spectral bandwidth of the proposed mode-locked fiber laser are measured, showing that the optical pulses are nearly transform limited. Moreover, stability evaluation for an hour is performed, showing that the proposed laser can achieve stable mode-locking without the need for optical feedback or any other stabilization mechanism.

  1. Retinal polarization-sensitive optical coherence tomography at 1060 nm with 350 kHz A-scan rate using an Fourier domain mode locked laser

    DEFF Research Database (Denmark)

    Torzicky, Teresa; Marschall, Sebastian; Pircher, Michael

    2013-01-01

    We present a novel, high-speed, polarization-sensitive, optical coherence tomography set-up for retinal imaging operating at a central wavelength of 1060 nm which was tested for in vivo imaging in healthy human volunteers. We use the system in combination with a Fourier domain mode locked laser...

  2. Optical parametric generation by a simultaneously Q-switched mode-locked single-oscillator thulium-doped fiber laser in orientation-patterned gallium arsenide.

    Science.gov (United States)

    Donelan, Brenda; Kneis, Christian; Scurria, Giuseppe; Cadier, Benoît; Robin, Thierry; Lallier, Eric; Grisard, Arnaud; Gérard, Bruno; Eichhorn, Marc; Kieleck, Christelle

    2016-11-01

    Optical parametric generation is demonstrated in orientation-patterned gallium arsenide, pumped by a novel single-oscillator simultaneously Q-switched and mode-locked thulium-doped fiber laser, downconverting the pump radiation into the mid-infrared wavelength regime. The maximum output energy reached is greater than 2.0 μJ per pump pulse.

  3. Nanoscale charcoal powder induced saturable absorption and mode-locking of a low-gain erbium-doped fiber-ring laser

    Science.gov (United States)

    Lin, Yung-Hsiang; Chi, Yu-Chieh; Lin, Gong-Ru

    2013-05-01

    Triturated charcoal nano-powder directly brushed on a fiber connector end-face is used for the first time as a fast saturable absorber for a passively mode-locked erbium-doped fiber-ring laser (EDFL). These dispersant-free charcoal nano-powders with a small amount of crystalline graphene phase and highly disordered carbon structure exhibit a broadened x-ray diffraction peak and their Raman spectrum shows the existence of a carbon related D-band at 1350 cm-1 and the disappearance of the 2D-band peak at 2700 cm-1. The charcoal nano-powder exhibits a featureless linear absorbance in the infrared region with its linear transmittance of 0.66 nonlinearly saturated at 0.73 to give a ΔT/T of 10%. Picosecond mode-locking at a transform-limited condition of a low-gain EDFL is obtained by using the charcoal nano-powder. By using a commercial EDFA with a linear gain of only 17 dB at the saturated output power of 17.5 dB m required to initiate the saturable absorption of the charcoal nano-powder, the EDFL provides a pulsewidth narrowing from 3.3 to 1.36 ps associated with its spectral linewidth broadening from 0.8 to 1.83 nm on increasing the feedback ratio from 30 to 90%. This investigation indicates that all the carbon-based materials containing a crystalline graphene phase can be employed to passively mode-lock the EDFL, however, the disordered carbon structure inevitably induces a small modulation depth and a large mode-locking threshold, thus limiting the pulsewidth shortening. Nevertheless, the nanoscale charcoal passively mode-locked EDFL still shows the potential to generate picosecond pulses under a relatively low cavity gain. An appropriate cavity design can be used to compensate this defect-induced pulsewidth limitation and obtain a short pulsewidth.

  4. A modular architecture for multi-channel external cavity quantum cascade laser-based chemical sensors: a systems approach

    Energy Technology Data Exchange (ETDEWEB)

    Taubman, Matthew S.; Myers, Tanya L.; Bernacki, Bruce E.; Stahl, Robert D.; Cannon, Bret D.; Schiffern, John T.; Phillips, Mark C.

    2012-04-01

    A multi-channel laser-based chemical sensor platform is presented, in which a modular architecture allows the exchange of complete sensor channels without disruption to overall operation. Each sensor channel contains custom optical and electronics packages, which can be selected to access laser wavelengths, interaction path lengths and modulation techniques optimal for a given application or mission. Although intended primarily to accommodate mid-infrared (MIR) external cavity quantum cascade lasers (ECQCLs)and astigmatic Herriott cells, channels using visible or near infrared (NIR) lasers or other gas cell architectures can also be used, making this a truly versatile platform. Analog and digital resources have been carefully chosen to facilitate small footprint, rapid spectral scanning, ow-noise signal recovery, failsafe autonomous operation, and in-situ chemometric data analysis, storage and transmission. Results from the demonstration of a two-channel version of this platform are also presented.

  5. Demonstration of a rapidly-swept external cavity quantum cascade laser for rapid and sensitive quantification of chemical mixtures

    Science.gov (United States)

    Brumfield, B. E.; Taubman, M. S.; Phillips, M. C.

    2016-02-01

    A rapidly-swept external-cavity quantum cascade laser with an open-path Herriott cell is used to quantify gas-phase chemical mixtures of D2O and HDO at an update rate of 40 Hz (25 ms measurement time). The chemical mixtures were generated by evaporating D2O liquid near the open-path Herriott cell, allowing the H/D exchange reaction with ambient H2O to produce HDO. Fluctuations in the ratio of D2O and HDO on timescales of measurement time are estimated for D2O and HDO respectively with a 127 m optical path. These detection limits are reduced to 23.0 and 24.0 ppbv with a 1 s averaging time for D2O and HDO respectively. Detection limits measurement time.

  6. Modular PbSrS/PbS mid-infrared vertical external cavity surface emitting laser on Si

    Science.gov (United States)

    Khiar, A.; Rahim, M.; Fill, M.; Felder, F.; Zogg, H.; Cao, D.; Kobayashi, S.; Yokoyama, T.; Ishida, A.

    2011-07-01

    A mid-infrared vertical external cavity surface emitting laser (VECSEL) based on undoped PbS is described herein. A 200 nm-thick PbS active layer embedded between PbSrS cladding layers forms a double heterostructure. The layers are grown on a lattice and thermal expansion mismatched Si-substrate. The substrate is placed onto a flat bottom Bragg mirror again grown on a Si substrate, and the VECSEL is completed with a curved top mirror. Pumping is done optically with a 1.55 μm laser diode. This leads to an extremely simple modular fabrication process. Lasing wavelengths range from 3-3.8 μm at 100-260 K heat sink temperature. The lowest threshold power is ˜210 mWp and highest output power is ˜250 mWp. The influence of the different recombination mechanism as well as free carrier absorption on the threshold power is modeled.

  7. PbSe quantum well mid-infrared vertical external cavity surface emitting laser on Si-substrates

    Science.gov (United States)

    Fill, M.; Khiar, A.; Rahim, M.; Felder, F.; Zogg, H.

    2011-05-01

    Mid-infrared vertical external cavity surface emitting lasers based on PbSe/PbSrSe multi-quantum-well structures on Si-substrates are realized. A modular design allows growing the active region and the bottom Bragg mirror on two different Si-substrates, thus facilitating comparison between different structures. Lasing is observed from 3.3 to 5.1 μm wavelength and up to 52 °C heat sink temperature with 1.55 μm optical pumping. Simulations show that threshold powers are limited by Shockley-Read recombination with lifetimes as short as 0.1 ns. At higher temperatures, an additional threshold power increase occurs probably due to limited carrier diffusion length and carrier leakage, caused by an unfavorable band alignment.

  8. Simultaneous generation of wavelength division multiplexing PON and RoF signals using a hybrid mode-locked laser

    Science.gov (United States)

    Aldaya, Ivan; Campuzano, Gabriel; Castañón, Gerardo

    2015-06-01

    The use of millimeter-wave (mm-wave) frequencies has been proposed to overcome the imminent saturation of the ultra high frequency band, justifying research on radio over fiber (RoF) networks as an inexpensive and green solution to distribute multi-Gbps signals. Coincidently, telecommunication operators are investing a significant effort to deploy their passive optical network (PON) infrastructure closer to the users. In this work, we present a novel cost-efficient architecture based on a hybrid mode locked laser capable to simultaneously generate up-to 5 wavelength division multiplexing PON and RoF channels, being compatible with the 50-GHz ITU frequency grid. We analyze the limits of operation of our proposed architecture considering the high modal relative intensity noise induced by mode partition noise, as well as fiber impairments, such as chromatic dispersion and nonlinearities. The feasibility of generation and transmission of 5×10-Gbps PON and 5×5-Gbps RoF using orthogonal frequency division multiplexing up to 50 km has been demonstrated through realistic numerical simulations.

  9. Chair-like pulses in an all-normal dispersion Ytterbium-doped mode-locked fiber laser.

    Science.gov (United States)

    Gupta, Pradeep K; Singh, Chandra P; Singh, Amarjeet; Sharma, Sunil K; Mukhopadhyay, Pranab K; Bindra, Kushvinder S

    2016-12-10

    We report, for what we believe is the first time, generation of stable chair-like pulses (a pulse shape with an initial long flat portion followed by a short high peak power portion resembling the shape of a chair) by mode locking of a Ytterbium (Yb)-doped fiber laser. Chair-like pulse shapes are achieved by implementing dual saturable absorbers, one based on a nonlinear optical loop mirror (NOLM) and the other based on nonlinear polarization rotation (NPR) inside the cavity. The transmission characteristics of the NOLM-NPR pair leading to the formation of chair-like pulses are numerically investigated. We also report the amplification characteristics of chair-like pulses in an external multistage Yb-doped fiber amplifier setup at different repetition rates of the pulse train. It was found that the chair-like pulses are suitable for amplification, and more than 10 W of average power at 460 kHz repetition rate have been obtained at total pump power of ∼20  W coupled to the power amplifier. At a lower repetition rate (115 kHz), ∼8  W of average power were obtained corresponding to ∼70  μJ of pulse energy with negligible contribution from amplified spontaneous emission or stimulated Raman scattering. We believe that such an oscillator-amplifier system could serve as an attractive tool for micromachining applications.

  10. Integrated Microwave Photonic Isolators: Theory, Experimental Realization and Application in a Unidirectional Ring Mode-Locked Laser Diode

    Directory of Open Access Journals (Sweden)

    Martijn J.R. Heck

    2015-09-01

    Full Text Available A novel integrated microwave photonic isolator is presented. It is based on the timed drive of a pair of optical modulators, which transmit a pulsed or oscillating optical signal with low loss, when driven in phase. A signal in the reverse propagation direction will find the modulators out of phase and, hence, will experience high loss. Optical and microwave isolation ratios were simulated to be in the range up to 10 dB and 20 dB, respectively, using parameters representative for the indium phosphide platform. The experimental realization of this device in the hybrid silicon platform showed microwave isolation in the 9 dB–22 dB range. Furthermore, we present a design study on the use of these isolators inside a ring mode-locked laser cavity. Simulations show that unidirectional operation can be achieved, with a 30–50-dB suppression of the counter propagating mode, at limited driving voltages. The potentially low noise and feedback-insensitive operation of such a laser makes it a very promising candidate for use as on-chip microwave or comb generators.

  11. Ultrathin quartz plate-based multilayer MoS2 for passively mode-locked fiber lasers (invited)

    Science.gov (United States)

    Jiang, Zike; Li, Jiarong; Chen, Hao; Wang, Jinzhang; Zhang, Wenfei; Yan, Peiguang

    2018-01-01

    We have grown ultrathin quartz plate-based multilayer molybdenum disulfide (MoS2) by chemical vapor deposition (CVD). When employed as saturable absorber (SA), the prepared MoS2 device exhibits remarkable merits (e.g. uniform thickness, high quality of crystal lattice high damage threshold easy fabrication and good practicability). The modulation depth, saturable intensity, and non-saturable loss of this SA device are measured to be 16.1%, 0.438 MW/cm2 and 44.6% respectively. By incorporating the SA into a typical ring cavity erbium-doped fiber laser, stable passive soliton mode-locked pulse is achieved with the repetition frequency of 0.987 MHz, the signal noise ratio (SNR) of 71.4 dB and the pulse duration of 2.17 ps. The experimental results demonstrate our MoS2-SA device to be an effective mode locker, and it is promising to be used in ultrafast photonics.

  12. Continuous-wave dual-wavelength operation of a distributed feedback laser diode with an external cavity using a volume Bragg grating

    Science.gov (United States)

    Zheng, Yujin; Sekine, Takashi; Kurita, Takashi; Kato, Yoshinori; Kawashima, Toshiyuki

    2018-03-01

    We demonstrate continuous-wave dual-wavelength operation of a broad-area distributed feedback (DFB) laser diode with a single external-cavity configuration. This high-power DFB laser has a narrow bandwidth (cavity DFB laser to output another stable wavelength beam with a narrow bandwidth of 0.27 nm. A frequency difference for dual-wavelength operation of 0.88 THz was achieved and an output power of up to 415 mW was obtained. The external-cavity DFB laser showed a stable dual-wavelength operation over the practical current and temperature ranges.

  13. Characterisation of the light pulses of a cavity dumped dye laser pumped by a cw mode-locked and q-switched Nd:YAG laser

    International Nuclear Information System (INIS)

    Geist, P.; Heisel, F.; Martz, A.; Miehe, J.A.; Miller, R.J.D.

    1984-01-01

    The frequency doubled pulses (of 532 nm) obtained, with the help of a KTP crystal, from those delivered by either a continuous wave mode-locked (100 MHz) or mode-locked Q-switched (0-1 KHz) Nd: YAG laser, are analyzed by means of a streak camera, operating in synchroscan or triggered mode. In the step-by-step measurements the pulse stability, concerning form and amplitude, is shown. In addition, measurements effectuated with synchronously pumped and cavity dumped dye laser (Rhodamine 6G), controlled by a Pockels cell, allows the obtention of stable and reproducible single pulses of 30 ps duration, 10 μJ energy and 500Hz frequency [fr

  14. Soliton rains in a graphene-oxide passively mode-locked ytterbium-doped fiber laser with all-normal dispersion

    International Nuclear Information System (INIS)

    Huang, S S; Yan, P G; Zhang, G L; Zhao, J Q; Li, H Q; Lin, R Y; Wang, Y G

    2014-01-01

    We experimentally investigated soliton rains in an ytterbium-doped fiber (YDF) laser with a net normal dispersion cavity using a graphene-oxide (GO) saturable absorber (SA). The 195 m-long-cavity, the fiber birefringence filter and the inserted 2.5 nm narrow bandwidth filter play important roles in the formation of the soliton rains. The soliton rain states can be changed by the effective gain bandwidth of the laser. The experimental results can be conducive to an understanding of dissipative soliton features and mode-locking dynamics in all-normal dispersion fiber lasers with GOSAs. To the best of our knowledge, this is the first demonstration of soliton rains in a GOSA passively mode-locked YDF laser with a net normal dispersion cavity. (letter)

  15. Ultralow-jitter passive timing stabilization of a mode-locked Er-doped fiber laser by injection of an optical pulse train.

    Science.gov (United States)

    Yoshitomi, Dai; Kobayashi, Yohei; Kakehata, Masayuki; Takada, Hideyuki; Torizuka, Kenji; Onuma, Taketo; Yokoi, Hideki; Sekiguchi, Takuro; Nakamura, Shinki

    2006-11-15

    The pulse timing of a mode-locked Er-doped fiber laser was stabilized to a reference pulse train from a Cr:forsterite mode-locked laser by all-optical passive synchronization scheme. The reference pulses were injected into a ring cavity of the fiber laser by using a 1.3-1.5 mum wavelength-division multiplexer. The spectral shift induced by cross-phase modulation between copropagating two-color pulses realizes self-synchronization due to intracavity group-delay dispersion. The rms integration of timing jitter between the fiber laser pulse and the reference pulse was 3.7 fs in a Fourier frequency range from 1 Hz to 100 kHz.

  16. Comb multi-wavelength, rectangular pulse, passively mode-locked fiber laser enhanced by un-pumped Erbium-doped fiber

    Science.gov (United States)

    Guo, Chunyu; Luo, Ruoheng; Liu, Weiqi; Ruan, Shuangchen; Yang, Jinhui; Yan, Peiguang; Wang, Jinzhang; Hua, Ping

    2018-01-01

    We propose and demonstrate a comb multi-wavelength, nanosecond rectangular pulse, passively mode-locked Erbium-doped fiber (EDF) laser. A section of un-pumped EDF had been employed to optimize the multi-wavelength pulses for the first time to the best of our knowledge. The un-pumped EDF absorbs the unwanted the short-wavelength lasing and optimizes the gain, therefore allowing for the enhancement of the long-wavelength lasing. Because of the gain competition effect in the un-pumped EDF, the output wavelength line number of the fiber laser can be significantly increased from three wavelengths to twenty lasing wavelengths. The mode-locked pulse has a rectangular temporal profile with pump power dependent pulse duration. Experimental results illustrate that the fiber laser has a good stability at room temperature. This work provides a new configuration for the design of multi-wavelength, rectangular nanosecond pulse that may fit for specific applications.

  17. Generation of 103 fs mode-locked pulses by a gain linewidth-variable Nd,Y:CaF2 disordered crystal.

    Science.gov (United States)

    Qin, Z P; Xie, G Q; Ma, J; Ge, W Y; Yuan, P; Qian, L J; Su, L B; Jiang, D P; Ma, F K; Zhang, Q; Cao, Y X; Xu, J

    2014-04-01

    We have demonstrated a diode-pumped passively mode-locked femtosecond Nd,Y:CaF2 disordered crystal laser for the first time to our knowledge. By choosing appropriate Y-doping concentration, a broad fluorescence linewidth of 31 nm has been obtained from the gain linewidth-variable Nd,Y:CaF2 crystal. With the Nd,Y:CaF2 disordered crystal as gain medium, the mode-locked laser generated pulses with pulse duration as short as 103 fs, average output power of 89 mW, and repetition rate of 100 MHz. To our best knowledge, this is the shortest pulse generated from Nd-doped crystal lasers so far. The research results show that the Nd,Y:CaF2 disordered crystal will be a potential alternative as gain medium of repetitive chirped pulse amplification for high-peak-power lasers.

  18. Analysis of soft-aperture Kerr-lens mode-locking in Ti:sapphire laser cavities using nonlinear ABCD-matrix

    International Nuclear Information System (INIS)

    Lee, Yong Woo; Cha, Yong Ho; Rhee, Yong Joo; Yoo, Byung Duk; Lee, Byoung Chul

    2004-01-01

    We have numerically analyzed the effect of soft-aperture Kerr-lens mode locking in Ti:sapphire laser cavities. Because the Kerr-lens effect depends on the intracavitiy power, we used nonlinear ABCD-matrix to calculated the power-dependent beam mode inside a cavity. In soft-aperture Kerr-lens mode locking, the Kerr-lens effect is strongly dependent on the position of the crystal, the separation of two curved mirrors, and the cavity length. Figure 1 is the schematic of the Ti:sapphire laser cavity used in our calculation. It consists of a Ti:sapphire crystal (Kerr medium), two curved mirrors, and flat mirrors. Lc is the Ti:sapphire crystal length, D1 the length between M1 and M3, D2 the length between M2 and M4, L1 the length between the crystal and M1, and L2 the length between crystal and M2

  19. Uniform spacing interrogation of a Fourier domain mode-locked fiber Bragg grating sensor system using a polarization-maintaining fiber Sagnac interferometer

    OpenAIRE

    Lee, Hwi Don; Jung, Eun Joo; Jeong, Myung Yung; Chen, Zhongping; Kim, Chang-Seok

    2013-01-01

    A novel linearized interrogation method is presented for a Fourier domain mode-locked (FDML) fiber Bragg grating (FBG) sensor system. In a high speed regime over several tens of kHz modulations, a sinusoidal wave is available to scan the center wavelength of an FDML wavelength-swept laser, instead of a conventional triangular wave. However, sinusoidal wave modulation suffers from an exaggerated non-uniform wavelength-spacing response in demodulating the time-encoded parameter to the absolute ...

  20. Medium-gain erbium doped fiber amplifier ring laser passively mode-locked by graphite nano-powder adhered thin PVA film

    Science.gov (United States)

    Lin, Yung-Hsiang; Lin, Gong-Ru

    2012-06-01

    A direct brushing process of graphite nano-powder adhered on the single-mode fiber end-face with the use of an ultrathin PVA film is demonstrated, such a graphite nano-powder adhered ultra-thin PVA film is introduced to passively mode-lock a medium-gain Erbium-doped fiber laser (EDFL). The structural property of the graphite nano-powder is investigated by Raman spectroscopy. Numerous structural defects induced when abrading the graphite into nano-powder are found to broaden the 2D band Raman scattered signal and attenuate its peak intensity. The graphite nano-powders exhibit the featureless transmittance to show the potential as being a broadband tuning saturable absorber. In addition, the modulation depth of 0.43 is comparable with the graphene saturable absorber. The central wavelength of the passively mode-locked medium-gain EDFL is at 1561.2 nm with the full width at half maximum (FHWM) of 1.62 nm, and the pulsewidth is 1.58 ps. Under the limited intra-cavity power of 18 dBm, a nearly transform-limited passively mode-locking EDFL with TBP of 0.32 is generated.

  1. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  2. Volume Bragg grating external cavities for the passive phase locking of high-brightness diode laser arrays: theoretical and experimental study

    DEFF Research Database (Denmark)

    Paboeuf, David; Vijayakumar, Deepak; Jensen, Ole Bjarlin

    2011-01-01

    We describe the theoretical modeling of the external-cavity operation of a phase-locked array of diode lasers in two configurations, the self-imaging cavity based on the Talbot effect and the angular-filtering cavity. Complex filtering functions, such as the transmission or reflection of a volume...

  3. Efficient quasi-three-level Nd:YAG laser at 946 nm pumped by a tunable external cavity tapered diode laser

    DEFF Research Database (Denmark)

    Cheng, Haynes Pak Hay; Jensen, Ole Bjarlin; Tidemand-Lichtenberg, Peter

    2010-01-01

    Using a tunable external cavity tapered diode laser (ECDL) pumped quasi-three-level Nd:YAG laser, a fivefold reduction in threshold and twofold increase in slope efficiency is demonstrated when compared to a traditional broad area diode laser pump source. A TEM00 power of 800 mW with 65% slope...

  4. Nanoscale charcoal powder induced saturable absorption and mode-locking of a low-gain erbium-doped fiber-ring laser

    International Nuclear Information System (INIS)

    Lin, Yung-Hsiang; Chi, Yu-Chieh; Lin, Gong-Ru

    2013-01-01

    Triturated charcoal nano-powder directly brushed on a fiber connector end-face is used for the first time as a fast saturable absorber for a passively mode-locked erbium-doped fiber-ring laser (EDFL). These dispersant-free charcoal nano-powders with a small amount of crystalline graphene phase and highly disordered carbon structure exhibit a broadened x-ray diffraction peak and their Raman spectrum shows the existence of a carbon related D-band at 1350 cm −1 and the disappearance of the 2D-band peak at 2700 cm −1 . The charcoal nano-powder exhibits a featureless linear absorbance in the infrared region with its linear transmittance of 0.66 nonlinearly saturated at 0.73 to give a ΔT/T of 10%. Picosecond mode-locking at a transform-limited condition of a low-gain EDFL is obtained by using the charcoal nano-powder. By using a commercial EDFA with a linear gain of only 17 dB at the saturated output power of 17.5 dB m required to initiate the saturable absorption of the charcoal nano-powder, the EDFL provides a pulsewidth narrowing from 3.3 to 1.36 ps associated with its spectral linewidth broadening from 0.8 to 1.83 nm on increasing the feedback ratio from 30 to 90%. This investigation indicates that all the carbon-based materials containing a crystalline graphene phase can be employed to passively mode-lock the EDFL, however, the disordered carbon structure inevitably induces a small modulation depth and a large mode-locking threshold, thus limiting the pulsewidth shortening. Nevertheless, the nanoscale charcoal passively mode-locked EDFL still shows the potential to generate picosecond pulses under a relatively low cavity gain. An appropriate cavity design can be used to compensate this defect-induced pulsewidth limitation and obtain a short pulsewidth. (letter)

  5. Wavelength modulation spectroscopy coupled with an external-cavity quantum cascade laser operating between 7.5 and 8 µm

    Science.gov (United States)

    Maity, Abhijit; Pal, Mithun; Maithani, Sanchi; Dutta Banik, Gourab; Pradhan, Manik

    2018-04-01

    We demonstrate a mid-infrared detection strategy with 1f-normalized 2f-wavelength modulation spectroscopy (WMS-2f/1f) using a continuous wave (CW) external-cavity quantum cascade laser (EC-QCL) operating between 7.5 and 8 µm. The detailed performance of the WMS-2f/1f detection method was evaluated by making rotationally resolved measurements in the (ν 4  +  ν 5) combination band of acetylene (C2H2) at 1311.7600 cm-1. A noise-limited detection limit of three parts per billion (ppb) with an integration time of 110 s was achieved for C2H2 detection. The present high-resolution CW-EC-QCL system coupled with the WMS-2f/1f strategy was further validated with an extended range of C2H2 concentration of 0.1-1000 ppm, which shows excellent promise for real-life practical sensing applications. Finally, we utilized the WMS-2f/1f technique to measure the C2H2 concentration in the exhaled breath of smokers.

  6. High average/peak power linearly polarized all-fiber picosecond MOPA seeded by mode-locked noise-like pulses

    Science.gov (United States)

    Yu, H. L.; Ma, P. F.; Tao, R. M.; Wang, X. L.; Zhou, P.; Chen, J. B.

    2015-06-01

    The characteristics of mode-locked noise-like pulses generated from a passively mode-locked fiber oscillator are experimentally investigated. By carefully adjusting the two polarization controllers, stable mode-locked noise-like pulse emission with a high radio frequency signal/noise ratio of  >55 dB is successfully achieved, ensuring the safety and possibility of high power amplification. To investigate the amplification characteristics of such pulses, one all-fiber master oscillator power amplifier (MOPA) is built to boost the power and energy of such pulses. Amplified noise-like pulses with average output power of 423 W, repetition rate of 18.71 MHz, pulse energy of 22.61 μJ, pulse duration of 72.1 ps and peak power of 314 kW are obtained. Near diffraction-limited beam is also demonstrated with M2 factor measured at full power operation of ~1.2 in the X and Y directions. The polarization extinction ratio at output power of 183 W is measured to be ~13 dB. To the best of our knowledge, this is the first demonstration of high-power amplification of noise-like pulses and the highest peak power ever reported in all-fiber picosecond MOPAs. The temporal self-compression process of such pulses and high peak power when amplified make it an ideal pump source for generation of high-power supercontinuum. Other potential applications, such as material processing and optical coherent tomography, could also be foreseen.

  7. Passively Q-switched and mode-locked Nd:GGG laser with a Bi-doped GaAs saturable absorber.

    Science.gov (United States)

    Cong, Wen; Li, Dechun; Zhao, Shengzhi; Yang, Kejian; Li, Xiangyang; Qiao, Hui; Liu, Ji

    2014-06-16

    A simultaneously passively Q-switched and mode-locked (QML) Nd:GGG laser using a Bi-doped GaAs wafer as saturable absorber is accomplished for the first time. The Bi-doped GaAs wafer is fabricated by ion implantation and subsequent annealing. In comparison to the passively QML laser with GaAs, the QML laser with Bi-doped GaAs can generate more stable pulses with 99% modulation depth. The experiment results indicate that the Bi-doped GaAs could be an excellent saturable absorber for diode-pumped QML lasers.

  8. Influence of gain fiber on dissipative soliton pairs in passively mode-locked fiber laser based on BP as a saturable absorber

    Science.gov (United States)

    Gao, Bo; Ma, Chunyang; Huo, Jiayu; Guo, Yubin; Sun, Tiegang; Wu, Ge

    2018-03-01

    We investigate the influence of gain fiber on dissipative soliton pairs in passively mode-locked (PML) fiber laser based on black phosphorus (BP) as a saturable absorber. Numerical simulations show that we can generate the dissipative soliton pairs in PML fiber laser when the gain fiber parameters (gain saturation energy and gain bandwidth) are in an appropriate dynamic range, and the dissipative soliton pairs become unstable once the range is exceeded. Then we analyze the dynamic evolution of the dissipative soliton pairs and the influence of gain fiber on the pulse separation, peak power, and single-pulse energy of the dissipative solitons pairs.

  9. The simultaneous generation of soliton bunches and Q-switched-like pulses in a partially mode-locked fiber laser with a graphene saturable absorber

    Science.gov (United States)

    Wang, Zhenhong; Wang, Zhi; Liu, Yan-ge; He, Ruijing; Wang, Guangdou; Yang, Guang; Han, Simeng

    2018-05-01

    We experimentally report the coexistence of soliton bunches and Q-switched-like pulses in a partially mode-locked fiber laser with a microfiber-based graphene saturable absorber. The soliton bunches, like isolated spikes with extreme amplitude and ultrashort duration, randomly generate in the background of the Q-switched-like pulses. The soliton bunches have some pulse envelopes in which pulses operate at a fundamental repetition rate in the temporal domain. Further investigation shows that the composite pulses are highly correlated with the noise-like pulses. Our work can make a further contribution to enrich the understanding of the nonlinear dynamics in fiber lasers.

  10. Buffered Fourier domain mode locking: Unidirectional swept laser sources for optical coherence tomography imaging at 370,000 lines/s.

    Science.gov (United States)

    Huber, Robert; Adler, Desmond C; Fujimoto, James G

    2006-10-15

    We describe buffered Fourier domain mode locking (FDML), a technique for tailoring the output and multiplying the sweep rate of FDML lasers. Buffered FDML can be used to create unidirectional wavelength sweeps from the normal bidirectional sweeps in an FDML laser without sacrificing sweep rate. We also investigate the role of the laser source in dynamic range versus sensitivity performance in optical coherence tomography (OCT) imaging. Unidirectional sweep rates of 370 kHz over a 100 nm range at a center wavelength of 1300 nm are achieved. High-speed, swept-source OCT is demonstrated at record speeds of up to 370,000 axial scans per second.

  11. Vortex states near absolute zero in a weak-pinning amorphous Mo x Ge1-x film probed by pulsed mode-locking resonance

    Science.gov (United States)

    Sohara, N.; Ochi, A.; Murakami, E.; Ienaga, K.; Kaneko, S.; Kokubo, N.; Okuma, S.

    2017-07-01

    We have developed measurements of the mode-locking (ML) resonance with pulsed currents, which generates much less heat than the conventional one with continuous currents. Here, we present the experimental details of the pulsed ML measurement. Using this technique, we have succeeded in determining the dynamic melting field of a driven vortex lattice for a weak-pinning thick amorphous Mo x Ge1-x film down to 0.05 K. We construct an ideal vortex phase diagram in the absence of pinning near zero temperature as a function of magnetic field.

  12. An external-cavity quantum cascade laser operating near 5.2 µm combined with cavity ring-down spectroscopy for multi-component chemical sensing

    Science.gov (United States)

    Dutta Banik, Gourab; Maity, Abhijit; Som, Suman; Pal, Mithun; Pradhan, Manik

    2018-04-01

    We report on the performance of a widely tunable continuous wave mode-hop-free external-cavity quantum cascade laser operating at λ ~ 5.2 µm combined with cavity ring-down spectroscopy (CRDS) technique for high-resolution molecular spectroscopy. The CRDS system has been utilized for simultaneous and molecule-specific detection of several environmentally and bio-medically important trace molecular species such as nitric oxide, nitrous oxide, carbonyl sulphide and acetylene (C2H2) at ultra-low concentrations by probing numerous rotationally resolved ro-vibrational transitions in the mid-IR spectral region within a relatively small spectral range of ~0.035 cm-1. This continuous wave external-cavity quantum cascade laser-based multi-component CRDS sensor with high sensitivity and molecular specificity promises applications in environmental sensing as well as non-invasive medical diagnosis through human breath analysis.

  13. Widely tunable eye-safe laser by a passively Q-switched photonic crystal fiber laser and an external-cavity optical parametric oscillator

    International Nuclear Information System (INIS)

    Chang, H L; Zhuang, W Z; Huang, W C; Huang, J Y; Huang, K F; Chen, Y F

    2011-01-01

    We report on a widely tunable passively Q-switched photonic crystal fiber (PCF) laser with wavelength tuning range up to 80 nm. The PCF laser utilizes an AlGaInAs quantum well/barrier structure as a saturable absorber and incorporates an external-cavity optical parametric oscillator (OPO) to achieve wavelength conversion. Under a pump power of 13.1 W at 976 nm, the PCF laser generated 1029-nm radiation with maximum output energy of 750 μJ and was incident into an external-cavity OPO. The output energy and peak power of signal wave was found to be 138 μJ and 19 kW, respectively. By tuning the temperature of nonlinear crystal, periodically poled lithium niobate (PPLN), in the OPO, the signal wavelength in eye-safe regime from 1513 to 1593 nm was obtained

  14. Source of ultra-short laser pulses at 1,55μm in vertical-external-cavity for linear optical sampling applications

    International Nuclear Information System (INIS)

    Khadour, A.

    2009-12-01

    The objectives of this thesis were, in a first step, to develop and implement VECSEL structures containing an active zone formed by GaAlInAs/InP quantum wells located at the anti-nodes of the resonant electric field, positioned on a Bragg mirror, all this being bonded to a substrate of good thermal conductivity. For this, we have designed structures optimizing the evacuation of heat generated in the active zone. This has greatly improved the VECSEL performances, especially their output power. The VECSEL performances were evaluated in a simple cavity with two mirrors (plane-concave). The second point was to develop and implement SESAM structures which, owing to their nonlinear characteristics, would allow a passively mode-locked laser operation. The structures contained InGaAsN/GaAs quantum wells. The studied parameters were the number of quantum wells, and the resonant or anti-resonant behavior of the structure. The linear and nonlinear optical characterizations were used to optimize the SESAM structure and estimate their performances. Finally, the compatibility between the VECSEL and SESAM structures, in terms of modulation depth and resonance wavelength, made it possible to obtain the passive mode locking operation. The obtained pulses show two different behaviors depending on the dispersion properties of the structures. With low dispersion, we have made the first demonstration of a passively mode-locked VECSEL at 1550 nm, operating at room temperature. An all-optical sampling device implementing the linear optical sampling technique using short laser pulses has been realized and tested. This device will allow displaying eye diagrams and constellation diagrams with an expected sensitivity around -20 dBm of average power. Testing the device allowed to visualize the acquisition of very high repetition rate signals (40 Gb/s). (author)

  15. Quantum dot cadmium selenide as a saturable absorber for Q-switched and mode-locked double-clad ytterbium-doped fiber lasers

    Science.gov (United States)

    Mahyuddin, M. B. H.; Latiff, A. A.; Rusdi, M. F. M.; Irawati, N.; Harun, S. W.

    2017-08-01

    This paper demonstrates the integration of quantum dot (QD) cadmium selenide (CdSe) nanoparticles, which is embedded into polymethyl methacrylate (PMMA) film into an ytterbium-doped fiber laser (YDFL) cavity to produce Q-switched and mode-locked fiber lasers. The QD CdSe based film functions as a saturable absorber (SA). For Q-switching operation, stable pulse is generated within 970-1200 mW pump power, with tunable repetition rate and pulse width of 24.5-40.5 kHz and 6.8-3.7 μs, respectively. Maximum pulse energy and peak power are obtained about 1.1 μJ and 0.28 W, respectively. As we tune the polarization state of the laser cavity and use a single QD CdSe film, the mode-locking operation could also be generated within 310-468 mW pump power with repetition rate of 14.5 MHz and pulse width of 3.5 ps. Maximum pulse energy and peak power are obtained about 2 nJ and 0.11 W, respectively. These results may contribute to continuous research work on laser pulse generation, providing new opportunities of CdSe material in photonics applications.

  16. Design optimization of a compact photonic crystal microcavity based on slow light and dispersion engineering for the miniaturization of integrated mode-locked lasers

    Directory of Open Access Journals (Sweden)

    Malik Kemiche

    2018-01-01

    Full Text Available We exploit slow light (high ng modes in planar photonic crystals in order to design a compact cavity, which provides an attractive path towards the miniaturization of near-infrared integrated fast pulsed lasers. By applying dispersion engineering techniques, we can design structures with a low dispersion, as needed by mode-locking operation. Our basic InP SiO2 heterostructure is robust and well suited to integrated laser applications. We show that an optimized 30 μm long cavity design yields 9 frequency-equidistant modes with a FSR of 178 GHz within a 11.5 nm bandwidth, which could potentially sustain the generation of optical pulses shorter than 700 fs. In addition, the numerically calculated quality factors of these modes are all above 10,000, making them suitable for reaching laser operation. Thanks to the use of a high group index (28, this cavity design is almost one order of magnitude shorter than standard rib-waveguide based mode-locked lasers. The use of slow light modes in planar photonic crystal based cavities thus relaxes the usual constraints that tightly link the device size and the quality (peak power, repetition rate of the pulsed laser signal.

  17. DWDM channel spacing tunable optical TDM carrier from a mode-locked weak-resonant-cavity Fabry-Perot laser diode based fiber ring.

    Science.gov (United States)

    Peng, Guo-Hsuan; Chi, Yu-Chieh; Lin, Gong-Ru

    2008-08-18

    A novel optical TDM pulsed carrier with tunable mode spacing matching the ITU-T defined DWDM channels is demonstrated, which is generated from an optically injection-mode-locked weak-resonant-cavity Fabry-Perot laser diode (FPLD) with 10%-end-facet reflectivity. The FPLD exhibits relatively weak cavity modes and a gain spectral linewidth covering >33.5 nm. The least common multiple of the mode spacing determined by both the weak-resonant-cavity FPLD and the fiber-ring cavity can be tunable by adjusting length of the fiber ring cavity or the FPLD temperature to approach the desired 200GHz DWDM channel spacing of 1.6 nm. At a specific fiber-ring cavity length, such a least-common- multiple selection rule results in 12 lasing modes between 1532 and 1545 nm naturally and a mode-locking pulsewidth of 19 ps broadened by group velocity dispersion among different modes. With an additional intracavity bandpass filter, the operating wavelength can further extend from 1520 to 1553.5 nm. After channel filtering, each selected longitudinal mode gives rise to a shortened pulsewidth of 12 ps due to the reduced group velocity dispersion. By linear dispersion compensating with a 55-m long dispersion compensation fiber (DCF), the pulsewidth can be further compressed to 8 ps with its corresponding peak-to-peak chirp reducing from 9.7 to 4.3 GHz.

  18. Influence of different approaches for dynamical performance optimization of monolithic passive colliding-pulse mode-locked laser diodes emitting around 850 nm

    Science.gov (United States)

    Prziwarka, T.; Klehr, A.; Wenzel, H.; Fricke, J.; Bugge, F.; Weyers, M.; Knigge, A.; Tränkle, G.

    2018-02-01

    Monolithic laser diodes which generate short infrared pulses in the picosecond and sub-picosecond ranges with high peak power are ideal sources for many applications like e.g. THz-time-domain spectroscopy (TDS) scanning systems. The achievable THz bandwidth is limited by the length of the optical pulses. Due to the fact that colliding-pulse mode locking (CPM) leads to the shortest pulses which could reached by passive mode locking, we experimentally investigated in detail the dynamical and electro optical performance of InGaAsP based quantum well CPM laser diodes with well-established vertical layer structures. Simple design modifications whose implementation is technically easy were realized. Improvements of the device performance in terms of pulse duration, output power, and noise properties are presented in dependence on the different adaptions. From the results we extract an optimized configuration with which we have reached pulses with durations of ≍1.5 ps, a peak power of > 1 W and a pulse-to-pulse timing jitter < 200 fs. The laser diodes emit pulses at a wavelength around 850 nm with a repetition frequency of ≍ 12.4 GHz and could be used as pump source for GaAs antennas to generate THz-radiation. Approaches for reducing pulse width, increasing output power, and improving noise performance are described.

  19. Mode-locking peculiarities in an all-fiber erbium-doped ring ultrashort pulse laser with a highly-nonlinear resonator

    Science.gov (United States)

    Dvoretskiy, Dmitriy A.; Sazonkin, Stanislav G.; Kudelin, Igor S.; Orekhov, Ilya O.; Pnev, Alexey B.; Karasik, Valeriy E.; Denisov, Lev K.

    2017-12-01

    Today ultrashort pulse (USP) fiber lasers are in great demand in a frequency metrology field, THz pulse spectroscopy, optical communication, quantum optics application, etc. Therefore mode-locked (ML) fiber lasers have been extensively investigated over the last decade due the number of scientific, medical and industrial applications. It should be noted, that USP fiber lasers can be treated as an ideal platform to expand future applications due to the complex ML nonlinear dynamics in a laser resonator. Up to now a series of novel ML regimes have been investigated e.g. self-similar pulses, noise-like pulses, multi-bound solitons and soliton rain generation. Recently, we have used a highly nonlinear germanosilicate fiber (with germanium oxides concentration in the core 50 mol. %) inside the resonator for more reliable and robust launching of passive mode-locking based on the nonlinear polarization evolution effect in fibers. In this work we have measured promising and stable ML regimes such as stretched pulses, soliton rain and multi-bound solitons formed in a highly-nonlinear ring laser and obtained by intracavity group velocity dispersion (GVD) variation in slightly negative region. As a result, we have obtained the low noise ultrashort pulse generation with duration 59 dB) and relative intensity noise <-101 dBc / Hz.

  20. Reduction of timing jitter and intensity noise in normal-dispersion passively mode-locked fiber lasers by narrow band-pass filtering.

    Science.gov (United States)

    Qin, Peng; Song, Youjian; Kim, Hyoji; Shin, Junho; Kwon, Dohyeon; Hu, Minglie; Wang, Chingyue; Kim, Jungwon

    2014-11-17

    Fiber lasers mode-locked with normal cavity dispersion have recently attracted great attention due to large output pulse energy and femtosecond pulse duration. Here we accurately characterized the timing jitter of normal-dispersion fiber lasers using a balanced cross-correlation method. The timing jitter characterization experiments show that the timing jitter of normal-dispersion mode-locked fiber lasers can be significantly reduced by using narrow band-pass filtering (e.g., 7-nm bandwidth filtering in this work). We further identify that the timing jitter of the fiber laser is confined in a limited range, which is almost independent of cavity dispersion map due to the amplifier-similariton formation by insertion of the narrow bandpass filter. The lowest observed timing jitter reaches 0.57 fs (rms) integrated from 10 kHz to 10 MHz Fourier frequency. The rms relative intensity noise (RIN) is also reduced from 0.37% to 0.02% (integrated from 1 kHz to 5 MHz Fourier frequency) by the insertion of narrow band-pass filter.

  1. Fiber optical parametric oscillator based on photonic crystal fiber pumped with all-normal-dispersion mode-locked Yb:fiber laser

    International Nuclear Information System (INIS)

    Gou Dou-Dou; Yang Si-Gang; Zhang Lei; Wang Xiao-Jian; Chen Hong-Wei; Chen Ming-Hua; Xie Shi-Zhong; Chen Wei; Luo Wen-Yong

    2014-01-01

    We demonstrate a cost effective, linearly tunable fiber optical parametric oscillator based on a home-made photonic crystal fiber pumped with a mode-locked ytterbium-doped fiber laser, providing linely tuning ranges from 1018 nm to 1038 nm for the idler wavelength and from 1097 nm to 1117 nm for the signal wavelength by tuning the pump wavelength and the cavity length. In order to obtain the desired fiber with a zero dispersion wavelength around 1060 nm, eight samples of photonic crystal fibers with gradually changed structural parameters are fabricated for the reason that it is difficult to accurately customize the structural dimensions during fabrication. We verify the usability of the fabricated fiber experimentally via optical parametric generation and conclude a successful procedure of design, fabirication, and verification. A seed source of home-made all-normal-dispersion mode-locked ytterbium-doped fiber laser with 38.57 ps pulsewidth around the 1064 nm wavelength is used to pump the fiber optical parametric oscillator. The wide picosecond pulse pump laser enables a larger walk-off tolerance between the pump light and the oscillating light as well as a longer photonic crystal fiber of 20 m superior to the femtosecond pulse lasers, resulting in a larger parametric amplification and a lower threshold pump power of 15.8 dBm of the fiber optical parametric oscillator. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  2. Atmospheric ammonia measurements in Houston, TX using an external cavity-quantum cascade laser-based sensor

    Science.gov (United States)

    Gong, L.; Lewicki, R.; Griffin, R. J.; Flynn, J. H.; Lefer, B. L.; Tittel, F. K.

    2010-12-01

    Ammonia (NH3) plays a significant role in atmospheric chemistry. It has many anthropogenic (e.g., agricultural crops and mineral fertilizers) and natural sources (e.g., animals, oceans, and vegetation) in the environment. In certain areas, industrial and motor vehicle activities also can contribute to increases in atmospheric NH3 levels. From a perspective of environmental concern, NH3 is a precursor of particulate matter (PM) because it can lead to production of ammonium salts (e.g., (NH4)2SO4 and NH4NO3) through chemical reactions with sulfuric and nitric acid. As a result, the abundance of NH3 in the atmosphere has a great impact on aerosol nucleation and composition. Despite this, NH3 is not regulated. It is crucial, however, to improve our understanding of the dynamics of NH3 in an industrial and urban area such as Greater Houston where atmospheric NH3 data are limited. In this study, a 10.4 µm external cavity quantum cascade laser (EC-QCL)-based sensor was developed and utilized. To monitor atmospheric NH3 at trace gas concentration levels, an amplitude modulated photo-acoustic spectroscopy (AM-PAS) technique was employed. The minimum detection limit obtained from the sensor is ~1.5 ppb for a 5-second data acquisition time. After averaging data over 300 seconds a sub-ppb NH3 concentration level can be achieved. The NH3 sensor has been deployed on the roof of a ~60-meter-high building (North Moody Tower) located on the University of Houston campus since November 2009. Several episodes of high NH3 concentrations were observed. For example, the sensor recorded a significant and lasting increase in NH3 concentrations (~21 ppb) on August 14, 2010, when a major accident occurred during the same time period on the Gulf Freeway (I-45) in Houston only 2 miles from the sampling site. The elevated concentration levels are assumed to be associated with NH3 generation from a chemical fire resulting from the collision involving two 18-wheelers, one carrying fertilizer

  3. Self-organization of the Q-switched mode-locked regime in a diode-pumped Nd:YAG laser

    Science.gov (United States)

    Donin, V. I.; Yakovin, D. V.; Gribanov, A. V.

    2015-06-01

    A new Q-switched mode-locked generation regime of a solid-state laser, in which a Q-switch is "spontaneously" formed at the frequency of relaxation oscillations, has been observed for the first time. The new generation has been implemented by means of the previously proposed method of an acoustic modulator of a traveling wave in combination with a spherical mirror of a cavity. Stable pulse trains with a repetition frequency of ~30 kHz and a duration of ~2 µs have been observed in the diode-pump Nd:YAG laser with an average output power of ~3 W. Each train contains about 200 equispaced single pulses with a duration of ~45 ps.

  4. Passively mode-locked fiber laser based on a hollow-core photonic crystal fiber filled with few-layered graphene oxide solution.

    Science.gov (United States)

    Liu, Zhi-Bo; He, Xiaoying; Wang, D N

    2011-08-15

    We demonstrate a nanosecond-pulse erbium-doped fiber laser that is passively mode locked by a hollow-core photonic crystal fiber filled with few-layered graphene oxide solution. Owing to the good solution processing capability of few-layered graphene oxide, which can be filled into the core of a hollow-core photonic crystal fiber through a selective hole filling process, a graphene saturable absorber can be successfully fabricated. The output pulses obtained have a center wavelength, pulse width, and repetition rate of 1561.2 nm, 4.85 ns, and 7.68 MHz, respectively. This method provides a simple and efficient approach to integrate the graphene into the optical fiber system. © 2011 Optical Society of America

  5. Phase-sensitive optical coherence tomography at up to 370,000 lines per second using buffered Fourier domain mode-locked lasers.

    Science.gov (United States)

    Adler, Desmond C; Huber, Robert; Fujimoto, James G

    2007-03-15

    Buffered Fourier domain mode-locked (FDML) lasers are demonstrated for dynamic phase-sensitive optical coherence tomography (OCT) and 3D OCT phase microscopy. Systems are operated at sweep speeds of 42, 117, and 370 kHz, and displacement sensitivities of 39, 52, and 102 pm are achieved, respectively. Sensitivities are comparable to spectrometer-based OCT phase microscopy systems, but much faster acquisition speeds are possible. An additional factor of sqrt 2 improvement in noise performance is observed for differential phase measurements, which is important for Doppler OCT. Dynamic measurements of piezoelectric transducer motion and static 3D OCT phase microscopy are demonstrated. Buffered FDML lasers provide excellent displacement sensitivities at extremely high sweep speeds.

  6. Fourier domain mode locking at 1050 nm for ultra-high-speed optical coherence tomography of the human retina at 236,000 axial scans per second.

    Science.gov (United States)

    Huber, R; Adler, D C; Srinivasan, V J; Fujimoto, J G

    2007-07-15

    A Fourier domain mode-locked (FDML) laser at 1050 nm for ultra-high-speed optical coherence tomography (OCT) imaging of the human retina is demonstrated. Achievable performance, physical limitations, design rules, and scaling principles for FDML operation and component choice in this wavelength range are discussed. The fiber-based FDML laser operates at a sweep rate of 236 kHz over a 63 nm tuning range, with 7 mW average output power. Ultra-high-speed retinal imaging is demonstrated at 236,000 axial scans per second. This represents a speed improvement of approximately10x over typical high-speed OCT systems, paving the way for densely sampled volumetric data sets and new imaging protocols.

  7. Dynamic and static strain fiber Bragg grating sensor interrogation with a 1.3 µm Fourier domain mode-locked wavelength-swept laser

    International Nuclear Information System (INIS)

    Lee, Byoung Chang; Jeon, Min Yong; Jung, Eun-Joo; Kim, Chang-Seok

    2010-01-01

    We demonstrate dynamic and static strain fiber Bragg grating (FBG) sensor array interrogation using a 1.3 µm Fourier-domain mode-locked (FDML) wavelength-swept laser. The FDML wavelength-swept laser provides a high speed scanning rate and wide scanning bandwidth. Using the FDML wavelength swept laser, we measure the performances of static strain sensor interrogation for both time and spectral domains. The slope coefficients for the measured relative wavelength difference and relative time delay from the static strain are 0.8 pm/µstrain and 0.086 ns/µstrain, respectively. We demonstrate the dynamic response of the FBG sensor array with a 100 Hz modulating strain based on the FDML wavelength-swept laser at a 40.6 kHz scanning rate. The FBG sensor interrogation system using the FDML wavelength-swept laser can be realized for high-speed and high-sensitivity monitoring systems

  8. Uniform spacing interrogation of a Fourier domain mode-locked fiber Bragg grating sensor system using a polarization-maintaining fiber Sagnac interferometer

    International Nuclear Information System (INIS)

    Lee, Hwi Don; Jeong, Myung Yung; Chen, Zhongping; Kim, Chang-Seok; Jung, Eun Joo

    2013-01-01

    A novel linearized interrogation method is presented for a Fourier domain mode-locked (FDML) fiber Bragg grating (FBG) sensor system. In a high speed regime over several tens of kHz modulations, a sinusoidal wave is available to scan the center wavelength of an FDML wavelength-swept laser, instead of a conventional triangular wave. However, sinusoidal wave modulation suffers from an exaggerated non-uniform wavelength-spacing response in demodulating the time-encoded parameter to the absolute wavelength. In this work, the calibration signal from a polarization-maintaining fiber Sagnac interferometer shares the FDML wavelength-swept laser for FBG sensors to convert the time-encoded FBG signal to the wavelength-encoded uniform-spacing signal. (paper)

  9. Uniform spacing interrogation of a Fourier domain mode-locked fiber Bragg grating sensor system using a polarization-maintaining fiber Sagnac interferometer

    Science.gov (United States)

    Lee, Hwi Don; Jung, Eun Joo; Jeong, Myung Yung; Chen, Zhongping; Kim, Chang-Seok

    2013-06-01

    A novel linearized interrogation method is presented for a Fourier domain mode-locked (FDML) fiber Bragg grating (FBG) sensor system. In a high speed regime over several tens of kHz modulations, a sinusoidal wave is available to scan the center wavelength of an FDML wavelength-swept laser, instead of a conventional triangular wave. However, sinusoidal wave modulation suffers from an exaggerated non-uniform wavelength-spacing response in demodulating the time-encoded parameter to the absolute wavelength. In this work, the calibration signal from a polarization-maintaining fiber Sagnac interferometer shares the FDML wavelength-swept laser for FBG sensors to convert the time-encoded FBG signal to the wavelength-encoded uniform-spacing signal.

  10. Gigahertz repetition rate, sub-femtosecond timing jitter optical pulse train directly generated from a mode-locked Yb:KYW laser.

    Science.gov (United States)

    Yang, Heewon; Kim, Hyoji; Shin, Junho; Kim, Chur; Choi, Sun Young; Kim, Guang-Hoon; Rotermund, Fabian; Kim, Jungwon

    2014-01-01

    We show that a 1.13 GHz repetition rate optical pulse train with 0.70 fs high-frequency timing jitter (integration bandwidth of 17.5 kHz-10 MHz, where the measurement instrument-limited noise floor contributes 0.41 fs in 10 MHz bandwidth) can be directly generated from a free-running, single-mode diode-pumped Yb:KYW laser mode-locked by single-wall carbon nanotube-coated mirrors. To our knowledge, this is the lowest-timing-jitter optical pulse train with gigahertz repetition rate ever measured. If this pulse train is used for direct sampling of 565 MHz signals (Nyquist frequency of the pulse train), the jitter level demonstrated would correspond to the projected effective-number-of-bit of 17.8, which is much higher than the thermal noise limit of 50 Ω load resistance (~14 bits).

  11. Optical frequency comb generator based on a monolithically integrated passive mode-locked ring laser with a Mach-Zehnder interferometer.

    Science.gov (United States)

    Corral, V; Guzmán, R; Gordón, C; Leijtens, X J M; Carpintero, G

    2016-05-01

    We report the demonstration of an optical-frequency comb generator based on a monolithically integrated ring laser fabricated in a multiproject wafer run in an active/passive integration process in a generic foundry using standardized building blocks. The device is based on a passive mode-locked ring laser architecture, which includes a Mach-Zehnder interferometer to flatten the spectral shape of the comb output. This structure allows monolithic integration with other optical components, such as optical filters for wavelength selection, or dual wavelength lasers for their stabilization. The results show a -10  dB span of the optical comb of 8.7 nm (1.08 THz), with comb spacing of 10.16 GHz. We also obtain a flatness of 44 lines within a 1.8 dB power variation.

  12. High-resolution retinal swept source optical coherence tomography with an ultra-wideband Fourier-domain mode-locked laser at MHz A-scan rates.

    Science.gov (United States)

    Kolb, Jan Philip; Pfeiffer, Tom; Eibl, Matthias; Hakert, Hubertus; Huber, Robert

    2018-01-01

    We present a new 1060 nm Fourier domain mode locked laser (FDML laser) with a record 143 nm sweep bandwidth at 2∙ 417 kHz  =  834 kHz and 120 nm at 1.67 MHz, respectively. We show that not only the bandwidth alone, but also the shape of the spectrum is critical for the resulting axial resolution, because of the specific wavelength-dependent absorption of the vitreous. The theoretical limit of our setup lies at 5.9 µm axial resolution. In vivo MHz-OCT imaging of human retina is performed and the image quality is compared to the previous results acquired with 70 nm sweep range, as well as to existing spectral domain OCT data with 2.1 µm axial resolution from literature. We identify benefits of the higher resolution, for example the improved visualization of small blood vessels in the retina besides several others.

  13. A novel multi-dimensional absolute distance measurement system using a basic frequency modulated continuous wave radar and an external cavity laser with trilateration metrology

    Science.gov (United States)

    Xiong, Xingting; Qu, Xinghua; Zhang, Fumin

    2018-01-01

    We propose and describe a novel multi-dimensional absolute distance measurement system. This system incorporates a basic frequency modulated continuous wave (FMCW) radar and an second external cavity laser (ECL). Through the use of trilateration, the system in our paper can provide 3D resolution inherently range. However, the measured optical path length differences (OPD) is often variable in industrial environments and this will causes Doppler effect, which has greatly impact on the measurement result. With using the second ECL, the system can correct the Doppler effect to ensure the precision of absolute distance measurement. Result of the simulation will prove the influence of Doppler effect.

  14. Mid-infrared PbTe vertical external cavity surface emitting laser on Si-substrate with above 1 W output power

    Science.gov (United States)

    Rahim, M.; Fill, M.; Felder, F.; Chappuis, D.; Corda, M.; Zogg, H.

    2009-12-01

    Mid-infrared vertical external cavity surface emitting lasers (VECSELs) emitting above 1 W output power in pulsed mode and up to 17 mW in continuous mode at -172 °C were realized. Emission wavelength changes from 5 μm at -172 °C to 3.6 μm at 20 °C heat sink temperature. The active medium is a one wavelength thick PbTe layer grown by molecular beam epitaxy on a Si-substrate. It is followed by a 2.5 pair Pb1-yEuyTe/EuTe epitaxial Bragg mirror. The cavity is completed with an external curved Pb1-yEuyTe/BaF2 mirror. The VECSEL is optically pumped with 1.55 μm wavelength laser and In-soldered to Cu heat sink. No microstructural processing is needed.

  15. Semiconductor film Cherenkov lasers

    Science.gov (United States)

    Walsh, John E.

    1994-12-01

    The technical achievements for the project 'Semiconductor Film Cherenkov Lasers' are summarized. Described in the fourteen appendices are the operation of a sapphire Cherenkov laser and various grating-coupled oscillators. These coherent radiation sources were operated over the spectral range extending from 3 mm down to 400 micrometers. The utility of various types of open, multi-grating resonators and mode-locked operation were also demonstrated. In addition to these experiments, which were carried out with a 10-100 kV pulse generator, a low-energy (3-3.6 MeV) Van de Graaff generator and a low-energy RF linac (2.8 MeV) were used to investigate the properties of continuum incoherent Smith-Purcell radiation. It was shown that levels of intensity comparable to the infrared beam lines on a synchrotron could be obtained and thus that grating-coupled sources are potentially an important new source for Fourier transform spectroscopy. Finally, a scanning electron microscope was adapted for investigating mu-electron-beam-driven far-infrared sources. At the close of the project, spontaneous emission over the 288-800 micrometers band had been observed. Intensity levels were in accord with expectations based on theory. One or more of the Appendices address these topics in detail.

  16. Ultrasensitive, real-time analysis of biomarkers in breath using tunable external cavity laser and off-axis cavity-enhanced absorption spectroscopy.

    Science.gov (United States)

    Bayrakli, Ismail; Akman, Hatice

    2015-03-01

    A robust biomedical sensor for ultrasensitive detection of biomarkers in breath based on a tunable external cavity laser (ECL) and an off-axis cavity-enhanced absorption spectroscopy (OA-CEAS) using an amplitude stabilizer is developed. A single-mode, narrow-linewidth, tunable ECL is demonstrated. A broadly coarse wavelength tuning range of 720 cm⁻¹ for the spectral range between 6890 and 6170 cm⁻¹ is achieved by rotating the diffraction grating forming a Littrow-type external-cavity configuration. A mode-hop-free tuning range of 1.85 cm⁻¹ is obtained. The linewidths below 140 kHz are recorded. The ECL is combined with an OA-CEAS to perform laser chemical sensing. Our system is able to detect any molecule in breath at concentrations to the ppbv range that have absorption lines in the spectral range between 1450 and 1620 nm. Ammonia is selected as target molecule to evaluate the performance of the sensor. Using the absorption line of ammonia at 6528.76 cm⁻¹, a minimum detectable absorption coefficient of approximately 1×10⁻⁸ cm⁻¹ is demonstrated for 256 averages. This is achieved for a 1.4-km absorption path length and a 2-s data-acquisition time. These results yield a detection sensitivity of approximately 8.6×10⁻¹⁰ cm⁻¹ Hz(-1/2). Ammonia in exhaled breath is analyzed and found in a concentration of 870 ppb for our example.

  17. Superluminescent high-efficient parametric generation in PPLN crystal with pumping by a Q-switched mode locked Nd:YAG laser

    Science.gov (United States)

    Donin, V. I.; Yakovin, D. V.; Yakovin, M. D.; Gribanov, A. V.

    2018-03-01

    We present results on parametric superluminescence in a periodically poled lithium niobate crystal pumped by a train of 45 ps pulses using a Q-switched mode locked Nd:YAG laser. The conversion efficiency (with respect to the absorbed power) was ~83%. To the best of our knowledge, this is the highest efficiency obtained with powerful superluminescent parametric sources. At the average pumping power of the laser of ~0.5 W and repetition rates of 1 and 1.7 kHz, the peak total output powers were as high as 210 and 200 kW, and the powers of the idler wavelength (3.82 µm) were 55 and 50 kW. New lines in the visible and UV spectrum were observed and are explained. The experiments demonstrated that the spectral and angular characteristics of superluminescence are determined by the pumping laser. In particular, the line width of the signal wave was close to that of the pumping line at ~200 GHz, and the divergence of the signal and idler waves depended only on the convergence (divergence) angle of the pumping radiation (30 mrad) and was independent of the wavelength.

  18. Design studies on compact four mirror laser resonator with mode-locked pulsed laser for 5 μm laser wire

    Energy Technology Data Exchange (ETDEWEB)

    Rawankar, Arpit [Department of Accelerator Science, School of High Energy Accelerator Science, Graduate University for Advanced Studies, Shonan International Village, Hayama, Miura, Kanagawa 240-0193 (Japan); High Energy Accelerator Research Organization KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Urakawa, Junji, E-mail: junji.urakawa@kek.jp [Department of Accelerator Science, School of High Energy Accelerator Science, Graduate University for Advanced Studies, Shonan International Village, Hayama, Miura, Kanagawa 240-0193 (Japan); High Energy Accelerator Research Organization KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Shimizu, Hirotaka [Department of Accelerator Science, School of High Energy Accelerator Science, Graduate University for Advanced Studies, Shonan International Village, Hayama, Miura, Kanagawa 240-0193 (Japan); You, Yan [Department of Engineering Physics, Tsinghua University, Beijing, 100084 (China); Terunuma, Nobuhiro [Department of Accelerator Science, School of High Energy Accelerator Science, Graduate University for Advanced Studies, Shonan International Village, Hayama, Miura, Kanagawa 240-0193 (Japan); High Energy Accelerator Research Organization KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Aryshev, Alexander; Honda, Yosuke [High Energy Accelerator Research Organization KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan)

    2013-02-01

    A compact prototype four-mirror optical cavity is being constructed at KEK-ATF to measure low-emittance electron beams in the damping ring. Four-mirror-resonators reduce the sensitivity to the misalignment of mirrors in comparison to two mirror-resonators. The aspect ratio is important when constructing a compact resonator with a very small beam waist of less than 5 μm. The total cavity length of a four-mirror resonator is matched according to the pulse repetition of mode-locked laser oscillator. Minimum beam waist is obtained in the sagittal plane using an IR pulsed laser. The advantage of such types of compact four-mirror-resonators is the total scanning time for measurement of the beam profile is much shorter in comparison to a CW laser wire system. By using a pulsed green laser that has been converted to the second harmonics from an IR pulsed laser, a minimum beam waist that has half the beam waist when using an IR laser oscillator can be obtained. Therefore, it is possible to obtain the beam waist of less than 5 μm (σ value) that is required for effective photon–electron collision. We report on the development and performance studies for such types of compact four-mirror laser wire systems.

  19. Ultrahigh-speed optical coherence tomography imaging and visualization of the embryonic avian heart using a buffered Fourier Domain Mode Locked laser.

    Science.gov (United States)

    Jenkins, M W; Adler, D C; Gargesha, M; Huber, R; Rothenberg, F; Belding, J; Watanabe, M; Wilson, D L; Fujimoto, J G; Rollins, A M

    2007-05-14

    The embryonic avian heart is an important model for studying cardiac developmental biology. The mechanisms that govern the development of a four-chambered heart from a peristaltic heart tube are largely unknown due in part to a lack of adequate imaging technology. Due to the small size and rapid motion of the living embryonic avian heart, an imaging system with high spatial and temporal resolution is required to study these models. Here, an optical coherence tomography (OCT) system using a buffered Fourier Domain Mode Locked (FDML) laser is applied for ultrahigh-speed non-invasive imaging of embryonic quail hearts at 100,000 axial scans per second. The high scan rate enables the acquisition of high temporal resolution 2D datasets (195 frames per second or 5.12 ms between frames) and 3D datasets (10 volumes per second). Spatio-temporal details of cardiac motion not resolvable using previous OCT technology are analyzed. Visualization and measurement techniques are developed to non-invasively observe and quantify cardiac motion throughout the brief period of systole (less than 50 msec) and diastole. This marks the first time that the preseptated embryonic avian heart has been imaged in 4D without the aid of gating and the first time it has been viewed in cross section during looping with extremely high temporal resolution, enabling the observation of morphological dynamics of the beating heart during systole.

  20. Ultrahigh-speed optical coherence tomography imaging and visualization of the embryonic avian heart using a buffered Fourier Domain Mode Locked laser

    Science.gov (United States)

    Jenkins, M. W.; Adler, D. C.; Gargesha, M.; Huber, R.; Rothenberg, F.; Belding, J.; Watanabe, M.; Wilson, D. L.; Fujimoto, J. G.; Rollins, A. M.

    2015-01-01

    The embryonic avian heart is an important model for studying cardiac developmental biology. The mechanisms that govern the development of a four-chambered heart from a peristaltic heart tube are largely unknown due in part to a lack of adequate imaging technology. Due to the small size and rapid motion of the living embryonic avian heart, an imaging system with high spatial and temporal resolution is required to study these models. Here, an optical coherence tomography (OCT) system using a buffered Fourier Domain Mode Locked (FDML) laser is applied for ultrahigh-speed non-invasive imaging of embryonic quail hearts at 100,000 axial scans per second. The high scan rate enables the acquisition of high temporal resolution 2D datasets (195 frames per second or 5.12 ms between frames) and 3D datasets (10 volumes per second). Spatio-temporal details of cardiac motion not resolvable using previous OCT technology are analyzed. Visualization and measurement techniques are developed to non-invasively observe and quantify cardiac motion throughout the brief period of systole (less than 50 msec) and diastole. This marks the first time that the preseptated embryonic avian heart has been imaged in 4D without the aid of gating and the first time it has been viewed in cross section during looping with extremely high temporal resolution, enabling the observation of morphological dynamics of the beating heart during systole. PMID:19546930

  1. Mitigation of mode partition noise in quantum-dash Fabry-Perot mode-locked lasers using Manchester encoding and balanced detection.

    Science.gov (United States)

    Chaibi, Mohamed Essghair; Bramerie, Laurent; Lobo, Sébastien; Peucheret, Christophe

    2017-07-10

    We propose the use of Manchester encoding in conjunction with balanced detection to overcome the mode partition noise (MPN) limit of quantum-dash Fabry-Perot mode-locked lasers (QD-MLLs) used as multi-wavelength sources in short-reach applications. The proposed approach is demonstrated for a 10-mode laser, each carrying a 10-Gb/s signal. We show that bit-error-rate floors as high as 10 -4 when traditional non-return-to-zero (NRZ) modulation is employed with a single-ended detection scheme can be pushed below 10 -9 thanks to the introduction of Manchester encoding together with balanced detection. The benefit of the scheme could be attributed to the spectral shift of the Manchester spectrum, resulting in a smaller overlap with the high-relative intensity noise (RIN) region present at low frequencies, and the use of balanced detection. We clarify the origin of the performance improvement through comparisons of single-ended and balanced detection and the use of a RIN emulation technique. We unambiguously show that the use of balanced detection plays the leading role in MPN mitigation enabled by Manchester modulation.

  2. 41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band

    DEFF Research Database (Denmark)

    Dontabactouny, M.; Piron, R.; Klaime, K.

    2012-01-01

    This paper reports recent results on InAs/InP quantum dash-based, two-section, passively mode-locked lasers pulsing at 41 GHz and 10.6 GHz and emitting at 1.59 mu m at 20 degrees C. The 41-GHz device (1 mm long) starts lasing at 25 mA under uniform injection and the 10.6 GHz (4 mm long) at 71 m...

  3. Mathematical solutions of rate equations of a laser-diode end-pumped passively Q-switched and mode locked Nd-laser with Cr4+:YAG polarized saturable absorber

    International Nuclear Information System (INIS)

    Abdul Ghani, B.; Hammadi, M.

    2012-01-01

    The intracavity frequency-doubling (IFD) of a simultaneous passively Q-switched mode-locked diode-pumped Nd 3 + - laser is studied with a polarized isotropic Cr 4 +: YAG saturable absorber. A general recurrence formula for the mode-locked pulses under the Q-switched envelope at fundamental wavelength has been reconstructed in order to analyze the temporal shape behavior of a single Q-switched envelope with mode-locking pulse trains. This formula has been derived taking into account the impact of the IFD and polarized Cr 4 +: YAG saturable absorber.The presented mathematical model describes the self-induced anisotropy appeared in the polarized Cr 4 +: YAG in the nonlinear stage of the giant pulse formation. For the anisotropic Nd 3 +: YVO 4 active medium, the generated polarized waves are assumed to be fixed through the lasing cycle. Besides, the maximum absorber initial transmission and the minimum mirror reflectivity values have been determined from the second threshold criterion. The calculated numerical results demonstrate the impact of the variation of the input laser parameters (rotational angle of the polarized crystal, absorber initial transmission and the output mirror reflectivity) on the characteristics of the output laser pulse (SH peak power, pulse width, pulse duration and shift pulse position of central mode). The calculated numerical results in this work is in good qualitative and quantitative agreement with the available experimental data reported in the references. (author)

  4. Fundamental and harmonic soliton mode-locked erbium-doped fiber laser using single-walled carbon nanotubes embedded in poly (ethylene oxide) film saturable absorber

    Science.gov (United States)

    Rosdin, R. Z. R. R.; Zarei, A.; Ali, N. M.; Arof, H.; Ahmad, H.; Harun, S. W.

    2015-01-01

    This paper presents a simple, compact and low cost mode-locked Erbium-doped fiber laser (EDFL) using a single-walled carbon nanotubes (SWCNTs) embedded in poly(ethylene oxide) (PEO) film as a passive saturable absorber. The film was fabricated using a prepared homogeneous SWCNT solution, which was mixed with a diluted PEO solution and casted onto a glass petri dish to form a thin film by evaporation technique. The film, with a thickness of 50 μm, is sandwiched between two fiber connectors to construct a saturable absorber, which is then integrated in an EDFL cavity to generate a self-started stable soliton pulses operating at 1560.8 nm. The soliton pulse starts to lase at 1480 nm pup power threshold of 12.3 mW to produce pulse train with repetition rate of 11.21 MHz, pulse width of 1.02 ps, average output power of 0.65 mW and pulse energy of 57.98 pJ. Then, we observed the 4th, 7th and 15th harmonic of fundamental cavity frequency start to occur when the pump powers are further increased to 14.9, 17.5 and 20.1 mW, respectively. The 4th harmonic pulses are characterized in detail with a repetition rate of 44.84 MHz, a transform-limited pulse width of 1.19 ps, side-mode suppression ratio of larger than 20 dB and pulse energy of 9.14 pJ.

  5. Periodic dark pulse emission induced by delayed feedback in a quantum well semiconductor laser

    Directory of Open Access Journals (Sweden)

    L. Li

    2012-12-01

    Full Text Available We report the experimental observation of periodic dark pulse emission in a quantum-well semiconductor laser with delayed optical feedback. We found that under appropriate operation conditions the laser can also emit a stable train of dark pulses. The repetition frequency of the dark pulse is determined by the external cavity length. Splitting of the dark pulse was also observed. We speculate that the observed dark pulse is a kind of temporal cavity soliton formed in the laser.

  6. Simultaneous frequency stabilization and high-power dense wavelength division multiplexing (HP-DWDM) using an external cavity based on volume Bragg gratings (VBGs)

    Science.gov (United States)

    Hengesbach, Stefan; Klein, Sarah; Holly, Carlo; Witte, Ulrich; Traub, Martin; Hoffmann, Dieter

    2016-03-01

    Multiplexing technologies enable the development of high-brightness diode lasers for direct industrial applications. We present a High-Power Dense Wavelength Division Multiplexer (HP-DWDM) with an average channel spacing of 1.7 (1.5) nm and a subsequent external cavity mirror to provide feedback for frequency stabilization and multiplexing in one step. The "self-optimizing" multiplexing unit consists of four reflective Volume Bragg Gratings (VBGs) with 99% diffraction efficiency and seven dielectric mirrors to overlay the radiation of five input channels with an adjustable channel spacing of 1-2 nm. In detail, we focus on the analysis of the overall optical efficiency, the change of the beam parameter product and the spectral width. The performance is demonstrated using five 90 μm multimode 9xx single emitters with M2angular intensity distribution changes strongly and the beam parameter product decreases by a factor of 1.2 to 1.9. Thereby the angular intensity distribution is more affected than the width of the beam waist. The spectral width per emitter decreases to 3-200 pm (FWHM) depending on the injection current and the reflectance of the feedback mirror (0.75%, 1.5%, 4%, 6% or 8%). The overall optical multiplexing efficiency ranges between 77% and 86%. With some modifications (e.g. enhanced AR-coatings) we expect 90-95%.

  7. 2.5-Gb/s hybridly-integrated tunable external cavity laser using a superluminescent diode and a polymer Bragg reflector.

    Science.gov (United States)

    Yoon, Ki-Hong; Oh, Su Hwan; Kim, Ki Soo; Kwon, O-Kyun; Oh, Dae Kon; Noh, Young-Ouk; Lee, Hyung-Jong

    2010-03-15

    We presented a hybridly-integrated tunable external cavity laser with 0.8 nm mode spacing 16 channels operating in the direct modulation of 2.5-Gbps for a low-cost source of a WDM-PON system. The tunable laser was fabricated by using a superluminescent diode (SLD) and a polymer Bragg reflector. The maximum output power and the power slope efficiency of the tunable laser were 10.3 mW and 0.132 mW/mA, respectively, at the SLD current of 100 mA and the temperature of 25 degrees C. The directly-modulated tunable laser successfully provided 2.5-Gbps transmissions through 20-km standard single mode fiber. The power penalty of the tunable laser was less than 0.8 dB for 16 channels after a 20-km transmission. The power penalty variation was less than 1.4 dB during the blue-shifted wavelength tuning.

  8. Tunable high-power narrow-spectrum external-cavity diode laser at 675 nm as a pump source for UV generation

    DEFF Research Database (Denmark)

    Chi, Mingjun; Jensen, Ole Bjarlin; Erbert, Gotz

    2011-01-01

    High-power narrow-spectrum diode laser systems based on tapered gain media in external cavity are demonstrated at 675 nm. Two 2-mm-long amplifiers are used, one with a 500-µm-long ridge-waveguide section (device A), the other with a 750-µm-long ridge-waveguide section (device B). The laser system...... A based on device A is tunable from 663 to 684 nm with output power higher than 0.55 W in the tuning range, as high as 1.25 W output power is obtained at 675.34 nm. The emission spectral bandwidth is less than 0.05 nm throughout the tuning range, and the beam quality factor M2 is 2.07 at an output power...... of 1.0 W. The laser system B based on device B is tunable from 666 to 685 nm. As high as 1.05 W output power is obtained around 675.67 nm. The emission spectral bandwidth is less than 0.07 nm throughout the tuning range, and the beam quality factor M2 is 1.13 at an output power of 0.93 W. The laser...

  9. Generation of more than 300 mW diffraction-limited light at 405 nm by second-harmonic generation of a tapered diode laser with external cavity feedback

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Holm, J.; Sumpf, B.

    2007-01-01

    We have constructed a blue laser source consisting of a single-frequency tapered diode laser with external cavity feedback that is frequency doubled by a quasi-phase matched KTP (PPKTP) in a bowtie ring cavity and extract more than 360 mW of power at 405 nm. The conversion efficiency from fundame...... fundamental laser power to second harmonic power is 35 %, while it is 64 % from coupled fundamental power to extracted blue light. Thermal effects and gray tracking set an upper limit on the amount of generated blue light.......We have constructed a blue laser source consisting of a single-frequency tapered diode laser with external cavity feedback that is frequency doubled by a quasi-phase matched KTP (PPKTP) in a bowtie ring cavity and extract more than 360 mW of power at 405 nm. The conversion efficiency from...

  10. Synchronization properties of chaotic semiconductor lasers and applications to encryption

    Science.gov (United States)

    Mirasso, Claudio R.; Vicente, Raúl; Colet, Pere; Mulet, Josep; Pérez, Toni

    2004-08-01

    We review the main properties of two unidirectionally coupled single-mode semiconductor lasers ( master-slave configuration). Our analysis is based on numerical simulations of a rate equations model. The emitter, or master laser, is assumed to be an external-cavity single-mode semiconductor laser subject to optical feedback that operates in a chaotic regime. The receiver, or slave laser, is similar to the emitter but can either operate in a chaotic regime, as the emitter (closed loop configuration), or without optical feedback and consequently under CW when it is uncoupled (open loop configuration). This configuration is one of the most simple and useful configuration for chaos based communication systems and data encryption. To cite this article: C.R. Mirasso et al., C. R. Physique 5 (2004).

  11. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  12. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  13. All-fiber interferometer-based repetition-rate stabilization of mode-locked lasers to 10-14-level frequency instability and 1-fs-level jitter over 1  s.

    Science.gov (United States)

    Kwon, Dohyeon; Kim, Jungwon

    2017-12-15

    We report on all-fiber Michelson interferometer-based repetition-rate stabilization of femtosecond mode-locked lasers down to 1.3×10 -14 frequency instability and 1.4 fs integrated jitter in a 1 s time scale. The use of a compactly packaged 10 km long single-mode fiber (SMF)-28 fiber link as a timing reference allows the scaling of phase noise at a 10 GHz carrier down to -80  dBc/Hz at 1 Hz Fourier frequency. We also tested a 500 m long low-thermal-sensitivity fiber as a reference and found that, compared to standard SMF-28 fiber, it can mitigate the phase noise divergence by ∼10  dB/dec in the 0.1-1 Hz Fourier frequency range. These results suggest that the use of a longer low-thermal-sensitivity fiber may achieve sub-femtosecond integrated timing jitter with sub-10 -14 -level frequency instability in repetition rate by a simple and robust all-fiber-photonic method.

  14. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  15. Macroporous Semiconductors

    Directory of Open Access Journals (Sweden)

    Helmut Föll

    2010-05-01

    Full Text Available Pores in single crystalline semiconductors come in many forms (e.g., pore sizes from 2 nm to > 10 µm; morphologies from perfect pore crystal to fractal and exhibit many unique properties directly or as nanocompounds if the pores are filled. The various kinds of pores obtained in semiconductors like Ge, Si, III-V, and II-VI compound semiconductors are systematically reviewed, emphasizing macropores. Essentials of pore formation mechanisms will be discussed, focusing on differences and some open questions but in particular on common properties. Possible applications of porous semiconductors, including for example high explosives, high efficiency electrodes for Li ion batteries, drug delivery systems, solar cells, thermoelectric elements and many novel electronic, optical or sensor devices, will be introduced and discussed.

  16. Semiconductor heterojunctions

    CERN Document Server

    Sharma, B L

    1974-01-01

    Semiconductor Heterojunctions investigates various aspects of semiconductor heterojunctions. Topics covered include the theory of heterojunctions and their energy band profiles, electrical and optoelectronic properties, and methods of preparation. A number of heterojunction devices are also considered, from photovoltaic converters to photodiodes, transistors, and injection lasers.Comprised of eight chapters, this volume begins with an overview of the theory of heterojunctions and a discussion on abrupt isotype and anisotype heterojunctions, along with graded heterojunctions. The reader is then

  17. Mode Locking of Quantum Cascade Lasers

    National Research Council Canada - National Science Library

    Capasso, Federico; Kaertner, Franz X

    2007-01-01

    .... A wide variety of experimental data on multimode regimes is presented. Lasers with narrow active region and/or with metal coating on the sides tend to develop a splitting in the spectrum, approximately equal to twice the Rabi frequency...

  18. Flexible optical clock recovery utilizing a multi-function semiconductor fiber laser

    Science.gov (United States)

    Feng, H.; Zhao, W.; Xie, X. P.; Qian, F. C.; Wang, W.; Huang, X.; Hu, H.

    2013-08-01

    We demonstrate a multi-function fiber laser based on cross-gain modulation in a semiconductor optical amplifier (SOA). Depending on the input signals, the fiber cavity can emit a continuous wave (CW) laser, mode-locked pulses, or act as a clock recovery device. With an extra CW light overcoming the pattern effect in the clock recovery process, a 10-GHz synchronous clock sequence with <0.1 power fluctuation and <120-fs timing jitter is extracted from the transmission return-to-zero data stream. We further analyze the recovered clock properties as a function of the input signal, and find that the clock recovery system presents good stability over a large range of input signal characteristics. The multi-function fiber laser exhibits the advantages of compact configuration and low cost, which is very convenient and attractive for optical communications and signal processing.

  19. Semiconductor electrochemistry

    CERN Document Server

    Memming, Rüdiger

    2015-01-01

    Providing both an introduction and an up-to-date survey of the entire field, this text captivates the reader with its clear style and inspiring, yet solid presentation. The significantly expanded second edition of this milestone work is supplemented by a completely new chapter on the hot topic of nanoparticles and includes the latest insights into the deposition of dye layers on semiconductor electrodes. In his monograph, the acknowledged expert Professor Memming primarily addresses physical and electrochemists, but materials scientists, physicists, and engineers dealing with semiconductor technology and its applications will also benefit greatly from the contents.

  20. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  1. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  2. Polarization dynamics of VCSELs in external cavities

    Science.gov (United States)

    Marconi, M.; Javaloyes, J.; Barland, S.; Balle, S.; Giudici, M.

    2014-05-01

    We review the dynamics of VCSELs that experience both Polarization-Selective Feedback (PSF) and Crossed- Polarization Reinjection (XPR). Different regimes of regular pulsation were found. For strong enough XPR levels, the VCSEL emission in each of its linearly-polarized components displays a square-wave modulation which regularity is greatly enhanced by small levels of PSF. Such a square-wave is in antiphase for the two polarizations, and it turns out to be stable and robust over broad intervals of current. The frequency of the square-wave is determined by the length of the XPR arm. For weak levels of PSF and XPR, the VCSEL emits a regular train of short optical pulses arising from the locking of the modes in the PSF cavity. The frequency of the pulse train is stable on short time scales, but it wanders with a characteristic time scale of hundreds of roundtrips in the PSF cavity. The experimental results are successfully explained by an extension of the Spin-Flip Model that incorporates gain saturation and the effects of PSF and XPR.

  3. Observation of Combination Bands Involving Intermolecular Vibrations of N_2O-N_2, N_2O-OCS and N_2O-CO_2 Complexes Using AN External Cavity Quantum Cascade Laser

    Science.gov (United States)

    Rezaei, M.; Sheybani-Deloui, S.; Moazzen-Ahmadi, N.; McKellar, A. R. W.

    2013-06-01

    Spectra of the weakly-bound N_2O-CO_2, N_2O-OCS, and N_2O-N_2 complexes in the region of the N_2O ν_1 fundamental band (˜2224 cm^{-1}) are observed in a pulsed supersonic slit jet expansion probed with a quantum cascade laser. One new band is observed for each complex: two combination bands involving the intermolecular in-plane bending for N_2O-CO_2 and N_2O-N_2 complexes, and the out-of-plane torsional vibration for N_2O-OCS. The resulting intermolecular frequencies are 34.17, 17.11 and 22.33 cm^{-1} for N_2O-CO_2, N_2O-OCS, and N_2O-N_2 complexes, respectively. The intermolecular vibrations provide clear spectroscopic data against which theory can be benchmarked. These results will be discussed, along with a brief introduction to our pulsed-jet supersonic apparatus which has been retrofitted by an infrared cw external-cavity quantum cascade laser (QCL) manufactured by Daylight Solutions. The QCL is used in the rapid-scan signal averaging mode. Although the repetition rate of the QCL is limited by its PZT scan rate, which is 100 Hz, we describe a simple technique to increase the effective repetition rate to 625 Hz. In addition, we have significantly reduced the long term frequency drift of the QCL by locking the laser frequency to the sides of a reference line. Limin Zheng, Soo-Ying Lee, Yunpeng Lu, and Minghui Yang, J. Chem. Phys. 138, 044302 (2013).

  4. Semiconductor Detectors; Detectores de Semiconductores

    Energy Technology Data Exchange (ETDEWEB)

    Cortina, E.

    2007-07-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  5. Closed-loop design of active semiconductor quantum well material systems

    Science.gov (United States)

    Moloney, J. V.; Hader, J.; Koch, S. W.

    2005-10-01

    Semiconductor quantum well active structures are pervasive in many applications of defense related systems ranging from low power edge (DFB), VCSEL and VCSEL emitter arrays to high power low brightness broad area emitters and diode bars. Recent breakthroughs in the development of a new class of high brightness vertical external cavity (VECSEL) emitters offers the potential to replace solid state YAG kW-class laser weapons systems. Remarkably, despite the maturity and dramatic improvement in quality of semiconductor QW growth over the past three decades, there has been no truly predictive means of designing the semiconductor active structure and fast-tracking to a final packaged device. We will describe a fully self-consistent microscopic many-body approach to calculate optical gain, absorption, refractive index spectra and nonradiative recombination rates for a broad class of semiconductor quantum well material systems. The theoretical calculations are free of ad hoc parameter adjustments and provide, for the first time, a means of designing an active semiconductor epi-structure in a predictive manner.

  6. Optically pumped semiconductor lasers: Conception and characterization of a single mode source for Cesium atoms manipulation

    International Nuclear Information System (INIS)

    Cocquelin, B.

    2009-02-01

    Lasers currently used in atomic clocks or inertial sensors are suffering from a lack of power, narrow linewidth or compactness for future spatial missions. Optically pumped semiconductor lasers, which combine the approach of classical solid state lasers and the engineering of semiconductor laser, are considered here as a candidate to a metrological laser source dedicated to the manipulation of Cesium atoms in these instruments. These lasers have demonstrated high power laser emission in a circular single transverse mode, as well as single longitudinal mode emission, favoured by the semiconductor structure and the external cavity design. We study the definition and the characterization of a proper semiconductor structure for the cooling and the detection of Cesium atoms at 852 nm. A compact and robust prototype tunable on the Cesium D2 hyperfine structure is built. The laser frequency is locked to an atomic transition thanks to a saturated absorption setup. The emission spectral properties are investigated, with a particular attention to the laser frequency noise and the laser linewidth. Finally, we describe and model the thermal properties of the semiconductor structure, which enables the simulation of the laser power characteristic. The experimental parameters are optimised to obtain the maximum output power with our structure. Thanks to our analysis, we propose several ways to overcome these limitations, by reducing the structure heating. (authors)

  7. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  8. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  9. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  10. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  11. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  12. Power semiconductors

    CERN Document Server

    Kubát, M

    1984-01-01

    The book contains a summary of our knowledge of power semiconductor structures. It presents first a short historic introduction (Chap. I) as well as a brief selection of facts from solid state physics, in particular those related to power semiconductors (Chap. 2). The book deals with diode structures in Chap. 3. In addition to fundamental facts in pn-junction theory, the book covers mainly the important processes of power structures. It describes the emitter efficiency and function of microleaks (shunts). the p +p and n + n junctions, and in particular the recent theory of the pin, pvn and p1tn junctions, whose role appears to be decisive for the forward mode not only of diode structures but also of more complex ones. For power diode structures the reverse mode is the decisive factor in pn-junction breakdown theory. The presentation given here uses engineering features (the multiplication factor M and the experimentally detected laws for the volume and surface of crystals), which condenses the presentation an...

  13. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  14. Wavelength switching dynamics of two-colour semiconductor lasers with optical injection and feedback

    International Nuclear Information System (INIS)

    Osborne, S; Heinricht, P; Brandonisio, N; Amann, A; O’Brien, S

    2012-01-01

    The wavelength switching dynamics of two-colour semiconductor lasers with optical injection and feedback are presented. These devices incorporate slotted regions etched into the laser ridge waveguide for tailoring the output spectrum. Experimental measurements are presented demonstrating that optical injection in one or both modes of these devices can induce wavelength bistability. Measured switching dynamics with modulated optical injection are shown to be in excellent agreement with numerical simulations based on a simple rate equation model. We also demonstrate experimentally that time-delayed optical feedback can induce wavelength bistability for short external cavity lengths. Numerical simulations indicate that this two-colour optical feedback system can provide fast optical memory functionality based on injected optical pulses without the need for an external holding beam. (paper)

  15. Comparative study of the performance of semiconductor laser based coherent Doppler lidars

    DEFF Research Database (Denmark)

    Rodrigo, Peter John; Pedersen, Christian

    2012-01-01

    Coherent Doppler Lidars (CDLs), operating at an eye-safe 1.5-micron wavelength, have found promising applications in the optimization of wind-power production. To meet the wind-energy sector's impending demand for more cost-efficient industrial sensors, we have focused on the development of conti......Coherent Doppler Lidars (CDLs), operating at an eye-safe 1.5-micron wavelength, have found promising applications in the optimization of wind-power production. To meet the wind-energy sector's impending demand for more cost-efficient industrial sensors, we have focused on the development...... of continuous-wave CDL systems using compact, inexpensive semiconductor laser (SL) sources. In this work, we compare the performance of two candidate emitters for an allsemiconductor CDL system: (1) a monolithic master-oscillator-power-amplifier (MOPA) SL and (2) an external-cavity tapered diode laser (ECTDL)....

  16. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  17. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  18. Defects in semiconductor nanostructures

    Indian Academy of Sciences (India)

    Impurities play a pivotal role in semiconductors. One part in a million of phosphorous in silicon alters the conductivity of the latter by several orders of magnitude. Indeed, the information age is possible only because of the unique role of shallow impurities in semiconductors. Although work in semiconductor nanostructures ...

  19. Solid spectroscopy: semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  20. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  1. Theoretical modeling of the dynamics of a semiconductor laser subject to double-reflector optical feedback

    Energy Technology Data Exchange (ETDEWEB)

    Bakry, A. [King Abdulaziz University, 80203, Department of Physics, Faculty of Science (Saudi Arabia); Abdulrhmann, S. [Jazan University, 114, Department of Physics, Faculty of Sciences (Saudi Arabia); Ahmed, M., E-mail: mostafa.farghal@mu.edu.eg [King Abdulaziz University, 80203, Department of Physics, Faculty of Science (Saudi Arabia)

    2016-06-15

    We theoretically model the dynamics of semiconductor lasers subject to the double-reflector feedback. The proposed model is a new modification of the time-delay rate equations of semiconductor lasers under the optical feedback to account for this type of the double-reflector feedback. We examine the influence of adding the second reflector to dynamical states induced by the single-reflector feedback: periodic oscillations, period doubling, and chaos. Regimes of both short and long external cavities are considered. The present analyses are done using the bifurcation diagram, temporal trajectory, phase portrait, and fast Fourier transform of the laser intensity. We show that adding the second reflector attracts the periodic and perioddoubling oscillations, and chaos induced by the first reflector to a route-to-continuous-wave operation. During this operation, the periodic-oscillation frequency increases with strengthening the optical feedback. We show that the chaos induced by the double-reflector feedback is more irregular than that induced by the single-reflector feedback. The power spectrum of this chaos state does not reflect information on the geometry of the optical system, which then has potential for use in chaotic (secure) optical data encryption.

  2. Semiconductor Modeling Techniques

    CERN Document Server

    Xavier, Marie

    2012-01-01

    This book describes the key theoretical techniques for semiconductor research to quantitatively calculate and simulate the properties. It presents particular techniques to study novel semiconductor materials, such as 2D heterostructures, quantum wires, quantum dots and nitrogen containing III-V alloys. The book is aimed primarily at newcomers working in the field of semiconductor physics to give guidance in theory and experiment. The theoretical techniques for electronic and optoelectronic devices are explained in detail.

  3. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  4. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  5. Semiconductor Research Experimental Techniques

    CERN Document Server

    Balkan, Naci

    2012-01-01

    The book describes the fundamentals, latest developments and use of key experimental techniques for semiconductor research. It explains the application potential of various analytical methods and discusses the opportunities to apply particular analytical techniques to study novel semiconductor compounds, such as dilute nitride alloys. The emphasis is on the technique rather than on the particular system studied.

  6. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz nonlinear...

  7. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  8. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  9. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  10. Organic semiconductor crystals.

    Science.gov (United States)

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  11. Metal-Semiconductor Contacts

    Science.gov (United States)

    Pugh, D. I.

    Metal-semiconductor contacts display a range of electrical characteristics from strongly rectifying to ohmic, each having its own applications. The rectifying properties of metal points on metallic sulphides were used extensively as detectors in early radio experiments, while during the second world war the rectifying point contact diode became important as a frequency detector and low level microwave radar detector [1]. Since 1945 the development of metal semiconductor contacts has been stimulated by the intense activity in the field of semiconductor physics and has remained vital in the ohmic connection of semiconductor devices with the outside world. The developments in surface science and the increased use of Schottky barriers in microelectronics has lead to much research with the aim of obtaining a full understanding of the physics of barrier formation and of current transport across the metal-semiconductor interface. Large gain spin electronic devices are possible with appropriate designs by incorporating ferromagnetic layers with semiconductors such as silicon [2]. This inevitably leads to metal-semiconductor contacts, and the impact of such junctions on the device must be considered. In this section we aim to look simply at the physical models that can be used to understand the electrical properties that can arise from these contacts, and then briefly discuss how deviations of these models can occur in practical junctions.

  12. A dual-loss-modulated intra-cavity frequency-doubled Q-switched and mode-locked Nd:Lu0.15Y0.85VO4/KTP green laser with a single-walled carbon nanotube saturable absorber and an acousto-optic modulator

    International Nuclear Information System (INIS)

    Zhang, Gang; Zhao, Shengzhi; Yang, Kejian; Li, Guiqiu; Li, Dechun; Cheng, Kang; Han, Chao; Zhao, Bin; Wang, Yonggang

    2011-01-01

    By using both a single-walled carbon nanotube saturable absorber (SWCNT-SA) and an acousto-optic (AO) modulator, a dual-loss-modulated intra-cavity frequency-doubled Q-switched and mode-locked (QML) Nd:Lu 0.15 Y 0.85 VO 4 /KTP (KTiOPO 4 ) green laser was demonstrated for the first time. The QML green laser characteristics such as the pulse width and single-pulse energy have been measured for different modulation frequencies of the AO modulator (f p ). In particular, in comparison with the solely passively QML green laser with an SWCNT-SA, the dual-loss-modulated QML green laser can generate a more stable pulse train, a shorter pulse width of the Q-switched envelope, a greater pulse energy and a higher average peak power. For the dual-loss-modulated QML green laser, at a pump power of 7.9 W and a repetition rate of 10 kHz, the pulse width and the pulse energy of the Q-switch envelope and the average peak power of the QML green laser are 50 ns, 20.34 µJ and 15.5 kW, respectively, corresponding to a pulse width compression of 77%, a pulse energy improvement factor of six times and a QML peak power increase factor of 16 times when compared with those for the solely passively QML green laser. The experimental results show that the dual-loss modulation is an efficient method for the generation of a stable QML green laser with an SWCNT-SA

  13. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  14. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  15. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  16. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  17. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  18. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  19. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, E.E.

    2004-11-15

    A review of recent research involving isotopically controlled semiconductors is presented. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, can be considered the most important one for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples. Manuel Cardona, the longtime editor-in-chief of Solid State Communications has been and continues to be one of the major contributors to this field of solid state physics and it is a great pleasure to dedicate this review to him.

  20. Semiconductor nuclear detectors

    International Nuclear Information System (INIS)

    Schaub, Bernard

    1976-01-01

    Three semiconductors are nowadays available for nuclear detection (germanium, mercury iodide, cadmium telluride). Their methods of elaboration are briefly described and, as a conclusion, a very close at-hand development of cadmium telluride is foreseen [fr

  1. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  2. Mode-locked Bloch oscillations in a ring cavity

    International Nuclear Information System (INIS)

    Samoylova, M; Piovella, N; Hunter, D; Robb, G R M; Bachelard, R; Courteille, Ph W

    2014-01-01

    We present a new technique for stabilizing and monitoring Bloch oscillations of ultracold atoms in an optical lattice under the action of a constant external force. In the proposed scheme, the atoms also interact with a unidirectionally pumped optical ring cavity whose one arm is collinear with the optical lattice. For weak collective coupling, Bloch oscillations dominate over the collective atomic recoil lasing instability and develop a synchronized regime in which the atoms periodically exchange momentum with the cavity field. (letter)

  3. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  4. Market survey of semiconductors

    International Nuclear Information System (INIS)

    Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

    1977-06-01

    Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

  5. Towards the generation of random bits at terahertz rates based on a chaotic semiconductor laser

    International Nuclear Information System (INIS)

    Kanter, Ido; Aviad, Yaara; Reidler, Igor; Cohen, Elad; Rosenbluh, Michael

    2010-01-01

    Random bit generators (RBGs) are important in many aspects of statistical physics and crucial in Monte-Carlo simulations, stochastic modeling and quantum cryptography. The quality of a RBG is measured by the unpredictability of the bit string it produces and the speed at which the truly random bits can be generated. Deterministic algorithms generate pseudo-random numbers at high data rates as they are only limited by electronic hardware speed, but their unpredictability is limited by the very nature of their deterministic origin. It is widely accepted that the core of any true RBG must be an intrinsically non-deterministic physical process, e.g. measuring thermal noise from a resistor. Owing to low signal levels, such systems are highly susceptible to bias, introduced by amplification, and to small nonrandom external perturbations resulting in a limited generation rate, typically less than 100M bit/s. We present a physical random bit generator, based on a chaotic semiconductor laser, having delayed optical feedback, which operates reliably at rates up to 300Gbit/s. The method uses a high derivative of the digitized chaotic laser intensity and generates the random sequence by retaining a number of the least significant bits of the high derivative value. The method is insensitive to laser operational parameters and eliminates the necessity for all external constraints such as incommensurate sampling rates and laser external cavity round trip time. The randomness of long bit strings is verified by standard statistical tests.

  6. Evolution of the Novalux extended cavity surface-emitting semiconductor laser (NECSEL)

    Science.gov (United States)

    McInerney, John G.

    2016-03-01

    Novalux Inc was an enterprise founded by Aram Mooradian in 1998 to commercialise a novel electrically pumped vertical extended cavity semiconductor laser platform, initially aiming to produce pump lasers for optical fiber telecommunication networks. Following successful major investment in 2000, the company developed a range of single- and multi-mode 980 nm pump lasers emitting from 100-500 mW with excellent beam quality and efficiency. This rapid development required solution of several significant problems in chip and external cavity design, substrate and DBR mirror optimization, thermal engineering and mode selection. Output coupling to single mode fiber was exceptional. Following the collapse of the long haul telecom market in late 2001, a major reorientation of effort was undertaken, initially to develop compact 60-100 mW hybrid monolithically integrated pumplets for metro/local amplified networks, then to frequency-doubled blue light emitters for biotech, reprographics and general scientific applications. During 2001-3 I worked at Novalux on a career break from University College Cork, first as R&D Director managing a small group tasked with producing new capabilities and product options based on the NECSEL platform, including high power, pulsed and frequency doubled versions, then in 2002 as Director of New Product Realization managing the full engineering team, leading the transition to frequency doubled products.

  7. Towards the generation of random bits at terahertz rates based on a chaotic semiconductor laser

    Science.gov (United States)

    Kanter, Ido; Aviad, Yaara; Reidler, Igor; Cohen, Elad; Rosenbluh, Michael

    2010-06-01

    Random bit generators (RBGs) are important in many aspects of statistical physics and crucial in Monte-Carlo simulations, stochastic modeling and quantum cryptography. The quality of a RBG is measured by the unpredictability of the bit string it produces and the speed at which the truly random bits can be generated. Deterministic algorithms generate pseudo-random numbers at high data rates as they are only limited by electronic hardware speed, but their unpredictability is limited by the very nature of their deterministic origin. It is widely accepted that the core of any true RBG must be an intrinsically non-deterministic physical process, e.g. measuring thermal noise from a resistor. Owing to low signal levels, such systems are highly susceptible to bias, introduced by amplification, and to small nonrandom external perturbations resulting in a limited generation rate, typically less than 100M bit/s. We present a physical random bit generator, based on a chaotic semiconductor laser, having delayed optical feedback, which operates reliably at rates up to 300Gbit/s. The method uses a high derivative of the digitized chaotic laser intensity and generates the random sequence by retaining a number of the least significant bits of the high derivative value. The method is insensitive to laser operational parameters and eliminates the necessity for all external constraints such as incommensurate sampling rates and laser external cavity round trip time. The randomness of long bit strings is verified by standard statistical tests.

  8. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  9. Hydrogen in semiconductors II

    CERN Document Server

    Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

    1999-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  10. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  11. Basic Semiconductor Physics

    CERN Document Server

    Hamaguchi, Chihiro

    2010-01-01

    This book presents a detailed description of the basic semiconductor physics. The reader is assumed to have a basic command of mathematics and some elementary knowledge of solid state physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. The reader can understand three different methods of energy band calculations, empirical pseudo-potential, k.p perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for full band Monte Carlo simulation are discussed. Experiments and theoretical analysis of cyclotron resonance are discussed in detail because the results are essential to the understanding of semiconductor physics. Optical and transport properties, magneto-transport, two dimensional electron gas transport (HEMT and MOSFET), and quantum transport are reviewed, explaining optical transition, electron phonon interactions, electron mob...

  12. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  13. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  14. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  15. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  16. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  17. Optical processes in semiconductors

    CERN Document Server

    Pankove, Jacques I

    1975-01-01

    Based on a series of lectures at Berkeley, 1968-1969, this is the first book to deal comprehensively with all of the phenomena involving light in semiconductors. The author has combined, for the graduate student and researcher, a great variety of source material, journal research, and many years of experimental research, adding new insights published for the first time in this book.Coverage includes energy states in semiconductors and their perturbation by external parameters, absorption, relationships between optical constants, spectroscopy, radiative transitions, nonradiative recombination

  18. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  19. Physical principles of semiconductor detectors

    International Nuclear Information System (INIS)

    Micek, S.L.

    1979-01-01

    The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

  20. Handbook of luminescent semiconductor materials

    CERN Document Server

    Bergman, Leah

    2011-01-01

    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  1. Nonlinear Elasticity of Doped Semiconductors

    Science.gov (United States)

    2017-02-01

    AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

  2. Intense terahertz excitation of semiconductors

    CERN Document Server

    Ganichev, S D

    2006-01-01

    This work presents the first comprehensive treatment of high-power terahertz applications to semiconductors and low-dimensional semiconductor structures. Terahertz properties of semiconductors are in the centre of scientific activities because of the need of high-speed electronics.

  3. Semiconductor radiation detectors device physics

    CERN Document Server

    Lutz, Gerhard

    1999-01-01

    Describes the field of modern semiconductor detectors used for energy and position measurement radiation. This book includes an introduction to semiconductor physics. It explains the principles of semiconductor radiation detectors, followed by formal quantitative analysis. It also covers electronic signal readout.

  4. Semiconductors for plasmonics and metamaterials

    DEFF Research Database (Denmark)

    Naik, G.V.; Boltasseva, Alexandra

    2010-01-01

    with semiconductors can alleviate these problems if only semiconductors could exhibit negative real permittivity. Aluminum doped zinc oxide (AZO) is a low loss semiconductor that can show negative real permittivity in the NIR. A comparative assessment of AZO-based plasmonic devices such as superlens and hyperlens...

  5. Semiconductor detector physics

    International Nuclear Information System (INIS)

    Equer, B.

    1987-01-01

    Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

  6. Biexcitons in semiconductor microcavities

    DEFF Research Database (Denmark)

    Borri, P.; Langbein, W.; Woggon, U.

    2003-01-01

    In this paper, the present status of the experimental study of the optical properties of biexcitons in semiconductor microcavities is reviewed. In particular, a detailed investigation of a polariton-biexciton transition in a high-quality single quantum well GaAs/AlGaAs microcavity is reported...

  7. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  8. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  9. Basic semiconductor physics

    CERN Document Server

    Hamaguchi, Chihiro

    2017-01-01

    This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...

  10. Images through semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1986-01-01

    Improved image processing techniques are constantly being developed for television and for scanners using X-rays or other radiation for industrial or medical applications, etc. As Erik Heijne of CERN explains here, particle physics too has its own special requirements for image processing. The increasing use of semiconductor techniques for handling measurements down to the level of a few microns provides another example of the close interplay between scientific research and technological development. (orig.).

  11. Quantum Confined Semiconductors

    Science.gov (United States)

    2015-02-01

    RCR    , (5) which considers all elastic scattering events on the energy shell kk EEE   , which is appropriate for all scattering...fluctuations in semiconductor superlattices using a magneto -transport technique,” Superlattices and Microstructures 15, 225-228 (1994). 12. I. Dharssi and...εyy is consistently slightly tensile (≈ -1%), which agreed with theoretical calculations of εyy based on published values of elastic constants. An

  12. Muonium states in semiconductors

    International Nuclear Information System (INIS)

    Patterson, B.D.

    1987-01-01

    There is a brief summary of what is known about the muonium states isotropic, anisotropic and diamagnetic in diamond and zincblende semiconductors. The report deals with muonium spectroscopy, including the formation probabilities, hyperfine parameters and electronic g-factors of the states. The dynamics of the states is treated including a discussion of the transition from isotropic Mu to anisotropic Mu in diamond, temperature-dependent linewidthes in silicon and germanium and effects of daping and radiation damage

  13. Semiconductor projectile impact detector

    Science.gov (United States)

    Shriver, E. L. (Inventor)

    1977-01-01

    A semiconductor projectile impact detector is described for use in determining micrometeorite presence, as well as its flux and energy comprising a photovoltaic cell which generates a voltage according to the light and heat emitted by the micrometeorites upon impact. A counter and peak amplitude measuring device were used to indicate the number of particules which strike the surface of the cell as well as the kinetic energy of each of the particles.

  14. Nonradiative recombination in semiconductors

    CERN Document Server

    Abakumov, VN; Yassievich, IN

    1991-01-01

    In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels. The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier captu

  15. Semiconductor detectors. Recent evolution

    International Nuclear Information System (INIS)

    Siffert, P.

    1977-01-01

    The recent evolution as well as the problems appearing in the use of semiconductor counters in both X and γ-ray as well as heavy ions spectroscopy are reviewed. For the photon counters the discussion is limited to cadmium telluride and mercuric iodide room temperature diodes, whereas for heavy ions, identification by means of thin ΔE/Δx counters and some problems related to the pulse amplitude in E detectors are considered [fr

  16. Survey of semiconductor physics

    CERN Document Server

    Böer, Karl W

    1992-01-01

    Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top­ ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge­ neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a g...

  17. 75 FR 49526 - Freescale Semiconductor, Inc., Technical Information Center, Tempe, AZ; Freescale Semiconductor...

    Science.gov (United States)

    2010-08-13

    ... Semiconductor, Inc., Technical Information Center, Tempe, AZ; Freescale Semiconductor, Inc., Technical... October 1, 2009, applicable to workers of Freescale Semiconductor, Inc., Technical Information Center..., Massachusetts location of Freescale Semiconductor, Inc., Technical Information Center. The intent of the...

  18. New developments in power semiconductors

    Science.gov (United States)

    Sundberg, G. R.

    1983-06-01

    This paper represents an overview of some recent power semiconductor developments and spotlights new technologies that may have significant impact for aircraft electric secondary power. Primary emphasis will be on NASA-Lewis-supported developments in transistors, diodes, a new family of semiconductors, and solid-state remote power controllers. Several semiconductor companies that are moving into the power arena with devices rated at 400 V and 50 A and above are listed, with a brief look at a few devices.

  19. Band structure of semiconductors

    CERN Document Server

    Tsidilkovski, I M

    2013-01-01

    Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

  20. Physics of Organic Semiconductors

    CERN Document Server

    Brütting, Wolfgang

    2005-01-01

    Filling the gap in the literature currently available, this book presents an overview of our knowledge of the physics behind organic semiconductor devices. Contributions from 18 international research groups cover various aspects of this field, ranging from the growth of organic layers and crystals, their electronic properties at interfaces, their photophysics and electrical transport properties to the application of these materials in such different devices as organic field-effect transistors, photovoltaic cells and organic light-emitting diodes. From the contents:. * Excitation Dynamics in O

  1. Semiconductor ionizino. radiation detectors

    International Nuclear Information System (INIS)

    1982-01-01

    Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57 Co and 60 Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239 Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

  2. Semiconductor characterization for optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Miner, C.J. [Bell Northern Research Ltd., Ottawa, ON (Canada)

    1996-03-01

    Scanning reflectance spectroscopy, scanning photoluminescence, and double crystal x-ray diffraction mapping are all specialized non-destructive characterization tools which monitor the advanced materials used in the development of high speed optoelectronics. Each technology was described and their application in the assessment of III-V semiconductor composition, layer thickness and defect density was demonstrated. The new techniques have been optimized for speed, to make high spatial resolution mapping practical. Since the tests are non-destructive, frequent monitoring is possible. 11 refs., 7 figs.

  3. Basic properties of semiconductors

    CERN Document Server

    Landsberg, PT

    2013-01-01

    Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the

  4. Layered semiconductor neutron detectors

    Science.gov (United States)

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  5. Semiconductor Properties Near Interfaces.

    Science.gov (United States)

    1980-07-31

    Sputtered from Semiconductors", Proc. 13th Annual Conference of the Microbeam Analysis Society, 1978. 4. J. C. Potosky and D. B. Wittry, "The Secondary...Ion Optics of a Quadru- pole Ion Microprobe", Proc. 13th Annual Conference of the Microbeam Analysis Society, 1978. 5. F. Guo and D. B. Wittry, "Use...of Specimen Current Integration in SIMS", Proc. 13th Annual Conference of the Microbeam Analysis Society, 1978. 6. D. B. Wittry, ’. Y. Yin, and R. A

  6. Hydrogen in semiconductors

    CERN Document Server

    Pankove, Jacques I

    1991-01-01

    Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed cove

  7. Squeezed light in semiconductors

    CERN Document Server

    Ward, M B

    2001-01-01

    Experimental evidence is presented for the generation of photon-number squeezed states of light as a result of multi-photon absorption. Photon-number squeezing as a result of non-linear absorption has long been predicted and results have been obtained utilising two very different material systems: (i) an AIGaAs waveguide in which high optical intensities can be maintained over a relatively long interaction length of 2 mm; (ii) the organic polymer p-toluene sulphonate polydiacetylene that is essentially a one-dimensional semiconductor possessing a highly nonlinear optical susceptibility. The resulting nonlinear absorption is shown to leave the transmitted light in a state that is clearly nonclassical, exhibiting photon-number fluctuations below the shot-noise limit. Tuning the laser wavelength across the half-bandgap energy has enabled a comparison between two- and three-photon processes in the semiconductor waveguide. The correlations created between different spectral components of a pulsed beam of light as ...

  8. Single filament semiconductor laser

    International Nuclear Information System (INIS)

    Botez, D.

    1980-01-01

    A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

  9. Doped semiconductor nanocrystal junctions

    Energy Technology Data Exchange (ETDEWEB)

    Borowik, Ł.; Mélin, T., E-mail: thierry.melin@isen.iemn.univ-lille1.fr [Institut d’Electronique, de Microélectronique et de Nanotechnologie, CNRS-UMR8520, Avenue Poincaré, F-59652 Villeneuve d’Ascq (France); Nguyen-Tran, T.; Roca i Cabarrocas, P. [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS-UMR7647, Ecole Polytechnique, F-91128 Palaiseau (France)

    2013-11-28

    Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (N{sub D}≈10{sup 20}−10{sup 21}cm{sup −3}) silicon nanocrystals (NCs) in the 2–50 nm size range, using Kelvin probe force microscopy experiments with single charge sensitivity. We show that the charge transfer from doped NCs towards a two-dimensional layer experimentally follows a simple phenomenological law, corresponding to formation of an interface dipole linearly increasing with the NC diameter. This feature leads to analytically predictable junction properties down to quantum size regimes: NC depletion width independent of the NC size and varying as N{sub D}{sup −1/3}, and depleted charge linearly increasing with the NC diameter and varying as N{sub D}{sup 1/3}. We thus establish a “nanocrystal counterpart” of conventional semiconductor planar junctions, here however valid in regimes of strong electrostatic and quantum confinements.

  10. Process for producing chalcogenide semiconductors

    Science.gov (United States)

    Noufi, R.; Chen, Y.W.

    1985-04-30

    A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

  11. Progress in semiconductor drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Walton, J.; Gatti, E.

    1985-01-01

    Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements

  12. Terahertz Nonlinear Optics in Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

    2013-01-01

    We demonstrate the nonlinear optical effects – selfphase modulation and saturable absorption of a single-cycle THz pulse in a semiconductor. Resulting from THz-induced modulation of Drude plasma, these nonlinear optical effects, in particular, lead to self-shortening and nonlinear spectral...... breathing of a single-cycle THz pulse in a semiconductor....

  13. Optical coherent control in semiconductors

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

    2001-01-01

    of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...

  14. Electronic structure of semiconductor interfaces

    International Nuclear Information System (INIS)

    Herman, F.

    1983-01-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

  15. II-VI semiconductor compounds

    CERN Document Server

    1993-01-01

    For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

  16. Semiconductor photocatalysis principles and applications

    CERN Document Server

    Kisch, Horst

    2014-01-01

    Focusing on the basic principles of semiconductor photocatalysis, this book also gives a brief introduction to photochemistry, photoelectrochemistry, and homogeneous photocatalysis. In addition, the author - one of the leading authorities in the field - presents important environmental and practical aspects. A valuable, one-stop source for all chemists, material scientists, and physicists working in this area, as well as novice researchers entering semiconductor photocatalysis.

  17. Quantum transport in semiconductor nanowires

    NARCIS (Netherlands)

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

  18. Electrostatic Doping in Semiconductor Devices

    NARCIS (Netherlands)

    Gupta, Gaurav; Rajasekharan, Bijoy; Hueting, Raymond J.E.

    2017-01-01

    To overcome the limitations of chemical doping in nanometer-scale semiconductor devices, electrostatic doping (ED) is emerging as a broadly investigated alternative to provide regions with a high electron or hole density in a semiconductor device. In this paper, we review various reported ED

  19. Luminescence studies of semiconductor electrodes

    NARCIS (Netherlands)

    Kelly, J.J.; Kooij, Ernst S.; Meulenkamp, E.A.

    1999-01-01

    In this paper we review our recent results of in-situ luminescence studies of semiconductor electrodes. Three classes of materials are considered: single crystal compound semiconductors, porous silicon and semiconducting oxides doped with luminescent ions. We show how photoluminescence (PL) and

  20. Organic semiconductors in a spin

    CERN Document Server

    Samuel, I

    2002-01-01

    A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

  1. Ion implantation for semiconductors

    International Nuclear Information System (INIS)

    Grey-Morgan, T.

    1995-01-01

    Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

  2. Semiconductor testing method

    International Nuclear Information System (INIS)

    Brown, Stephen.

    1992-01-01

    In a method of avoiding use of nuclear radiation, eg gamma rays, X-rays, electron beams, for testing semiconductor components for resistance to hard radiation, which hard radiation causes data corruption in some memory devices and 'latch-up' in others, similar fault effects can be achieved using a xenon or other 'light' flash gun even though the penetration of light is significantly less than that of gamma rays. The method involves treating a device with gamma radiation, measuring a particular fault current at the onset of a fault event, repeating the test with light to confirm the occurrence of the fault event at the same measured fault current, and using the fault current value as a reference for future tests using light on similar devices. (author)

  3. Hydrogen in compound semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, E.E.

    1993-05-01

    Progress in the understanding of hydrogen and its interactions in III/V and II/VI compound semiconductors is reviewed. Donor, acceptor and deep level passivation is well established in III/V compounds based on electrical measurements and on spectroscopic studies. The hydrogen donor levels in GaAs and GaP are estimated to lie near E{sub v}+0.5 eV and E{sub v}+0.3 eV, respectively. Arsenic acceptors have been passivated by hydrogen in CdTe and the very first nitrogen-hydrogen local vibrational model spectra in ZnSe have been reported. This long awaited result may lead to an explanation for the poor activation of nitrogen acceptors in ZnSe grown by techniques which involve high concentrations of hydrogen.

  4. Semiconductor Nanocrystals for Biological Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  5. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1989-01-01

    The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs

  6. Selective, electrochemical etching of a semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

    2018-03-20

    Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

  7. Semiconductor technology program. Progress briefs

    Science.gov (United States)

    Bullis, W. M.

    1980-01-01

    Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

  8. Rhombohedrel Hybrid Crystal Semiconductor Device

    Data.gov (United States)

    National Aeronautics and Space Administration — Development of a new high speed and high efficiency hybrid crystal structure semiconductor device based on the the recent invention of rhombohedral hybrid crystal...

  9. Semiconductor radiation detectors. Device physics

    Energy Technology Data Exchange (ETDEWEB)

    Lutz, G. [Max-Planck-Institutes for Physics and Extraterrestrial Physics, Muenchen (Germany). Semiconductor Lab.

    2007-07-01

    Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

  10. Metal-insulator-semiconductor photodetectors.

    Science.gov (United States)

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  11. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  12. Semiconductor nanocrystals or quantum dots

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 18; Issue 8. Various Quantum Mechanical Concepts for Confinements in Semiconductor Nanocrystals. Jayakrishna Khatei Karuna Kar Nanda. Classroom Volume 18 Issue 8 August 2013 pp 771-776 ...

  13. Atomic layer deposition for semiconductors

    CERN Document Server

    Hwang, Cheol Seong

    2014-01-01

    This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.

  14. Quantum optics with semiconductor nanostructures

    CERN Document Server

    Jahnke, Frank

    2012-01-01

    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  15. Temperature controller of semiconductor laser

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Vít; Číp, Ondřej

    2003-01-01

    Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

  16. Time-resolved photoluminescence spectroscopy of semiconductors for optical applications beyond the visible spectral range

    Energy Technology Data Exchange (ETDEWEB)

    Chernikov, Alexey A.

    2011-07-01

    the impact of Coulomb-correlations on the carrier-phonon scattering. The experiments presented in chapter 5 deal with the characterization of recently synthesizedmaterial systems: ZnO/(ZnMg)O heterostructures, GaN quantum wires (QWires), as well as (GaAs)Bi quantum wells (QWs). TRPL spectroscopy is applied to gain insight as well as a better understanding of the respective carrier relaxation and recombination processes crucial for the device operation. The aim of the studies is the systematic investigation of carrier dynamics influenced by disorder. The measurements are supported by kinetic Monte- Carlo simulations, providing a quantitative analysis of carrier localization effects. In chapter 6, optimization and characterization studies of semiconductor lasers, based on the well-studied (GaIn)As material system designed for NIR applications, are performed. The device under investigation is the so-called vertical-external-cavity surface emitting laser (VECSEL). The experiments focus on the study of the thermal properties of a high-power VECSEL. The distribution and removal of the excess heat as well as the optimization of the laser for increased performance are addressed applying different heat-spreading and heat-transfer approaches. Based on these investigations, the possibility for power-scaling is evaluated and the underlying restrictions are analyzed. The latter investigations are performed applying spatially-resolved PL spectroscopy. An experimental setup is designed for monitoring the spatial distribution of heat in the semiconductor structure during laser operation.

  17. Reducing leakage current in semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

    2018-03-06

    A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

  18. Fractal properties of nanostructured semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Zhanabaev, Z.Zh. [Al-Farabi Khazakh National University, Tole bi Street, 96, Almaty 050012 (Kazakhstan); Grevtseva, T.Yu. [Al-Farabi Khazakh National University, Tole bi Street, 96, Almaty 050012 (Kazakhstan)]. E-mail: kenwp@mail.ru

    2007-03-15

    A theory for the temperature and time dependence of current carrier concentration in semiconductors with different non-equilibrium nanocluster structure has been developed. It was shown that the scale-invariant fractal self-similar and self-affine laws can exist near by the transition point to the equilibrium state. Results of the theory have been compared to the experimental data from electrical properties of semiconductor films with nanoclusters.

  19. Wake fields in semiconductor plasmas

    International Nuclear Information System (INIS)

    Berezhiani, V.I.; Mahajan, S.M.

    1994-05-01

    It is shown that an intense short laser pulse propagating through a semiconductor plasma will generated longitudinal Langmuir waves in its wake. The measurable wake field can be used as a diagnostic to study nonlinear optical phenomena. For narrow gap semiconductors (for examples InSb) with Kane-type dispersion relation, the system can simulate, at currently available laser powers, the physics underlying wake-field accelerators. (author). 9 refs, 1 fig

  20. Survey of cryogenic semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Talarico, L.J.; McKeever, J.W.

    1996-04-01

    Improved reliability and electronic performance can be achieved in a system operated at cryogenic temperatures because of the reduction in mechanical insult and in disruptive effects of thermal energy on electronic devices. Continuing discoveries of new superconductors with ever increasing values of T{sub c} above that of liquid nitrogen temperature (LNT) have provided incentive for developing semiconductor electronic systems that may also operate in the superconductor`s liquid nitrogen bath. Because of the interest in high-temperature superconductor (HTS) devices, liquid nitrogen is the cryogen of choice and LNT is the temperature on which this review is focused. The purpose of this survey is to locate and assemble published information comparing the room temperature (298 K), performance of commercially available conventional and hybrid semiconductor device with their performance at LNT (77K), to help establish their candidacy as cryogenic electronic devices specifically for use at LNT. The approach to gathering information for this survey included the following activities. Periodicals and proceedings were searched for information on the behavior of semiconductor devices at LNT. Telephone calls were made to representatives of semiconductor industries, to semiconductor subcontractors, to university faculty members prominent for their research in the area of cryogenic semiconductors, and to representatives of the National Aeronautics and Space Administration (NASA) and NASA subcontractors. The sources and contacts are listed with their responses in the introduction, and a list of references appears at the end of the survey.

  1. Semiconductor integrated circuits

    International Nuclear Information System (INIS)

    Michel, A.E.; Schwenker, R.O.; Ziegler, J.F.

    1979-01-01

    An improved method involving ion implantation to form non-epitaxial semiconductor integrated circuits. These are made by forming a silicon substrate of one conductivity type with a recessed silicon dioxide region extending into the substrate and enclosing a portion of the silicon substrate. A beam of ions of opposite conductivity type impurity is directed at the substrate at an energy and dosage level sufficient to form a first region of opposite conductivity within the silicon dioxide region. This impurity having a concentration peak below the surface of the substrate forms a region of the one conductivity type which extends from the substrate surface into the first opposite type region to a depth between the concentration peak and the surface and forms a second region of opposite conductivity type. The method, materials and ion beam conditions are detailed. Vertical bipolar integrated circuits can be made this way when the first opposite type conductivity region will function as a collector. Also circuits with inverted bipolar devices when this first region functions as a 'buried'' emitter region. (U.K.)

  2. Amorphous Semiconductor Alloys

    Science.gov (United States)

    Madan, Arun

    1985-08-01

    Amorphous silicon (a-Si) based alloys have attracted a considerable amount of interest because of their applications in a wide variety of technologies. However, the major effort has concentrated on inexpensive photovoltaic device applications and has moved from a laboratory curiosity in the early 1970's to viable commercial applications in the 1980's. Impressive progress in this field has been made since the group at University of Dundee demonstrated that a low defect, device quality hydrogenated amorphous silicon (a-Si:H) 12 material could be produced using the radio frequency (r.f.) glow discharge in SiH4 gas ' and that the material could be doped n- and p-type.3 These results spurred a worldwide interest in a-Si based alloys, especially for photovoltaic devices which has resulted in a conversion efficiency approaching 12%. There is now a quest for even higher conversion efficiencies by using the multijunction cell approach. This necessitates the synthesis of new materials of differing bandgaps, which in principle amorphous semiconductors can achieve. In this article, we review some of this work and consider from a device and a materials point of view the hurdles which have to be overcome before this type of concept can be realized.

  3. EDITORIAL: Oxide semiconductors

    Science.gov (United States)

    Kawasaki, M.; Makino, T.

    2005-04-01

    Blue or ultraviolet semiconducting light-emitting diodes have the potential to revolutionize illumination systems in the near-future. Such industrial need has propelled the investigation of several wide-gap semiconducting materials in recent years. Commercial applications include blue lasers for DVD memory and laser printers, while military applications are also expected. Most of the material development has so far been focused on GaN (band gap 3.5 eV at 2 K), and ZnSe (2.9 eV) because these two representative direct transition semiconductors are known to be bright emitting sources. GaN and GaN-based alloys are emerging as the winners in this field because ZnSe is subject to defect formation under high current drive. On the other hand, another II-VI compound, ZnO, has also excited substantial interest in the optoelectronics-oriented research communities because it is the brightest emitter of all, owing to the fact that its excitons have a 60 meV binding energy. This is compared with 26 meV for GaN and 20 meV for ZnSe. The stable excitons could lead to laser action based on their recombination even at temperatures well above room temperature. ZnO has additional major properties that are more advantageous than other wide-gap materials: availability of large area substrates, higher energy radiation stability, environmentally-friendly ingredients, and amenability to wet chemical etching. However, ZnO is not new to the semiconductor field as exemplified by several studies made during the 1960s on structural, vibrational, optical and electrical properties (Mollwo E 1982 Landolt-Boernstein New Series vol 17 (Berlin: Springer) p 35). In terms of devices, the luminescence from light-emitting diode structures was demonstrated in which Cu2O was used as the p-type material (Drapak I T 1968 Semiconductors 2 624). The main obstacle to the development of ZnO has been the lack of reproducible p-type ZnO. The possibility of achieving epitaxial p-type layers with the aid of thermal

  4. Semiconductors Investigated by Time Resolved Spectroscopy Using Femtosecond and Picosecond Laser Technology.

    Science.gov (United States)

    1986-03-08

    Measured by a Streak Camera, H. Zarrabi , R. R. Alfano, Phys. Rev. B32, 3947 (1985). Picosecond Pulses Produced by Mode Locking an Nd:Glass Laser with Kodak...Excitation" by Hassan J. Zarrabi , 1985, AFOSR General Optronics 3. "Picosecond and Steady State Spectroscopy of Defects in Semi-Insulating CdSe" by David L

  5. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji

    2017-01-01

    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  6. Semiconductor optoelectronic infrared spectroscopy

    International Nuclear Information System (INIS)

    Hollingworth, A.R.

    2001-08-01

    We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their future potential use in infrared emitters. The effects of bandstructure engineering have been studied in the output characteristics of mid-IR III-V laser diodes to show which processes (defects, radiative, Auger and phonon) dominate and whether non-radiative processes can be suppressed. A new three-beam pump probe experiment was used to investigate interband recombination directly in passive materials. Experiments on PbSe and theory for non-parabolic near-mirror bands and non-degenerate statistics were in good agreement. Comparisons with HgCdTe showed a reduction in the Auger coefficient of 1-2 orders of magnitude in the PbSe. Using Landau confinement to model spatial confinement in quantum dots (QDs) 'phonon bottlenecking' was studied. The results obtained from pump probe and cyclotron resonance saturation measurements showed a clear suppression in the cooling of carriers when Landau level separation was not resonant with LO phonon energy. When a bulk laser diode was placed in a magnetic field to produce a quasi quantum wire device the resulting enhanced differential gain and reduced Auger recombination lowered I th by 30%. This result showed many peaks in the light output which occurred when the LO phonon energy was a multiple of the Landau level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the carrier dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore

  7. Thiophene-Based Organic Semiconductors.

    Science.gov (United States)

    Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

    2017-10-24

    Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

  8. Catalysts, Protection Layers, and Semiconductors

    DEFF Research Database (Denmark)

    Chorkendorff, Ib

    2015-01-01

    Hydrogen is the simplest solar fuel to produce and in this presentation we shall give a short overview of the pros and cons of various tandem devices [1]. The large band gap semiconductor needs to be in front, but apart from that we can chose to have either the anode in front or back using either...... acid or alkaline conditions. Since most relevant semiconductors are very prone to corrosion the advantage of using buried junctions and using protection layers offering shall be discussed [2-4]. Next we shall discuss the availability of various catalysts for being coupled to these protections layers...... and how their stability may be evaluated [5, 6]. Examples of half-cell reaction using protection layers for both cathode and anode will be discussed though some of recent examples under both alkaline and acidic conditions. Si is a very good low band gap semiconductor and by using TiO2 as a protection...

  9. High pressure semiconductor physics I

    CERN Document Server

    Willardson, R K; Paul, William; Suski, Tadeusz

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tra...

  10. Selenium semiconductor core optical fibers

    Directory of Open Access Journals (Sweden)

    G. W. Tang

    2015-02-01

    Full Text Available Phosphate glass-clad optical fibers containing selenium (Se semiconductor core were fabricated using a molten core method. The cores were found to be amorphous as evidenced by X-ray diffraction and corroborated by Micro-Raman spectrum. Elemental analysis across the core/clad interface suggests that there is some diffusion of about 3 wt % oxygen in the core region. Phosphate glass-clad crystalline selenium core optical fibers were obtained by a postdrawing annealing process. A two-cm-long crystalline selenium semiconductor core optical fibers, electrically contacted to external circuitry through the fiber end facets, exhibit a three times change in conductivity between dark and illuminated states. Such crystalline selenium semiconductor core optical fibers have promising utility in optical switch and photoconductivity of optical fiber array.

  11. Semiconductor X-ray spectrometers

    International Nuclear Information System (INIS)

    Muggleton, A.H.F.

    1978-02-01

    An outline is given of recent developments in particle and photon induced x-ray fluorescence (XRF) analysis. Following a brief description of the basic mechanism of semiconductor detector operation a comparison is made between semiconductor detectors, scintillators and gas filled proportional devices. Detector fabrication and cryostat design are described in more detail and the effects of various device parameters on system performance, such as energy resolution, count rate capability, efficiency, microphony, etc. are discussed. The main applications of these detectors in x-ray fluorescence analysis, electron microprobe analysis, medical and pollution studies are reviewed

  12. Modeling of semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Mørk, Jesper; Bischoff, Svend; Berg, Tommy Winther

    We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed.......We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed....

  13. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

    1994-01-01

    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  14. Semiconductor lasers and herterojunction leds

    CERN Document Server

    Kressel, Henry

    2012-01-01

    Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

  15. Semiconductor device physics and simulation

    CERN Document Server

    Yuan, J S

    1998-01-01

    This volume provides thorough coverage of modern semiconductor devices -including hetero- and homo-junction devices-using a two-dimensional simulator (MEDICI) to perform the analysis and generate simulation results Each device is examined in terms of dc, ac, and transient simulator results; relevant device physics; and implications for design and analysis Two hundred forty-four useful figures illustrate the physical mechanisms and characteristics of the devices simulated Comprehensive and carefully organized, Semiconductor Device Physics and Simulation is the ideal bridge from device physics to practical device design

  16. Introduction to semiconductor manufacturing technology

    CERN Document Server

    2012-01-01

    IC chip manufacturing processes, such as photolithography, etch, CVD, PVD, CMP, ion implantation, RTP, inspection, and metrology, are complex methods that draw upon many disciplines. [i]Introduction to Semiconductor Manufacturing Technologies, Second Edition[/i] thoroughly describes the complicated processes with minimal mathematics, chemistry, and physics; it covers advanced concepts while keeping the contents accessible to readers without advanced degrees. Designed as a textbook for college students, this book provides a realistic picture of the semiconductor industry and an in-depth discuss

  17. Wide band gap semiconductor templates

    Energy Technology Data Exchange (ETDEWEB)

    Arendt, Paul N. (Los Alamos, NM); Stan, Liliana (Los Alamos, NM); Jia, Quanxi (Los Alamos, NM); DePaula, Raymond F. (Santa Fe, NM); Usov, Igor O. (Los Alamos, NM)

    2010-12-14

    The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.

  18. Organic semiconductors in sensor applications

    CERN Document Server

    Malliaras, George; Owens, Róisín

    2008-01-01

    Organic semiconductors offer unique characteristics such as tunability of electronic properties via chemical synthesis, compatibility with mechanically flexible substrates, low-cost manufacturing, and facile integration with chemical and biological functionalities. These characteristics have prompted the application of organic semiconductors and their devices in physical, chemical, and biological sensors. This book covers this rapidly emerging field by discussing both optical and electrical sensor concepts. Novel transducers based on organic light-emitting diodes and organic thin-film transistors, as well as systems-on-a-chip architectures are presented. Functionalization techniques to enhance specificity are outlined, and models for the sensor response are described.

  19. Tunable THz Generation by the Interaction of a Super-luminous Laser Pulse with Biased Semiconductor Plasma

    International Nuclear Information System (INIS)

    Papadopoulos, K.; Zigler, A.

    2006-01-01

    Terahertz (THz) radiation is electromagnetic radiation in the range between several hundred and a few thousand GHz. It covers the gap between fast-wave electronics (millimeter waves) and optics (infrared). This spectral region offers enormous potential for detection of explosives and chemical/biological agents, non-destructive testing of non-metallic structural materials and coatings of aircraft structures, medical imaging, bio-sensing of DNA stretching modes and high-altitude secure communications. The development of these applications has been hindered by the lack of powerful, tunable THz sources with controlled waveform. The need for such sources is accentuated by the strong, but selective absorption of THz radiation during transmission through air with high vapor content. The majority of the current experimental work relies on time-domain spectroscopy using fast electrically biased photoconductive sources in conjunction with femto-second mode-locked Ti:Sapphire lasers. These sources known as Large Aperture Photoconductive Antennas (LAPA) have very limited tunability, relatively low upper bound of power and no bandwidth control. The paper presents a novel source of THz radiation known as Miniature Photoconductive Capacitor Array (MPCA). Experiments demonstrated tunability between .1 - 2 THz, control of the relative bandwidth Δf/f between .5-.01, and controlled pulse length and pulse waveform (temporal shape, chirp, pulse-to-pulse modulation etc.). Direct scaling from the current device indicates efficiency in excess of 30% at 1 THz with 1/f2 scaling at higher frequencies, peak power of 100 kW and average power between .1-1 W. The physics underlying the MPCA is the interaction of a super-luminous ionization front generated by the oblique incidence of a Ti:Sapphire laser pulse on a semiconductor crystal (ZnSe) biased with an alternating electrostatic field, similar to that of a frozen wave generator. It is shown theoretically and experimentally that the

  20. Semiconductor structure and recess formation etch technique

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  1. Fundamentals of semiconductors physics and materials properties

    CERN Document Server

    Yu, Peter Y

    2005-01-01

    Provides detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. This textbook emphasizes understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors and features an extensive collection of tables of material parameters, figures, and problems.

  2. Influence of phonons on semiconductor quantum emission

    Energy Technology Data Exchange (ETDEWEB)

    Feldtmann, Thomas

    2009-07-06

    A microscopic theory of interacting charge carriers, lattice vibrations, and light modes in semiconductor systems is presented. The theory is applied to study quantum dots and phonon-assisted luminescence in bulk semiconductors and heterostructures. (orig.)

  3. Diode having trenches in a semiconductor region

    Energy Technology Data Exchange (ETDEWEB)

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  4. Anomalous lattice parameter of magnetic semiconductor alloys

    OpenAIRE

    CAETANO, Clovis; MARQUES, Marcelo; FERREIRA, Luiz G.; TELES, Lara K.

    2009-01-01

    The addition of transition metals (TM) to III-V semiconductors radically changes their electronic, magnetic and structural properties. In contrast to the conventional semiconductor alloys, the lattice parameter in magnetic semiconductor alloys, including the ones with diluted concentration (the diluted magnetic semiconductors - DMS), cannot be determined uniquely from the composition. By using first-principles calculations, we find a direct correlation between the magnetic moment and the anio...

  5. Semiconductor technology program: Progress briefs

    Science.gov (United States)

    Galloway, K. F.; Scace, R. I.; Walters, E. J.

    1981-01-01

    Measurement technology for semiconductor materials, process control, and devices, is discussed. Silicon and silicon based devices are emphasized. Highlighted activities include semiinsulating GaAs characterization, an automatic scanning spectroscopic ellipsometer, linewidth measurement and coherence, bandgap narrowing effects in silicon, the evaluation of electrical linewidth uniformity, and arsenicomplanted profiles in silicon.

  6. Towards filament free semiconductor lasers

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.

    2000-01-01

    We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...

  7. Ultrafast Spectroscopy of Semiconductor Devices

    DEFF Research Database (Denmark)

    Borri, Paola; Langbein, Wolfgang; Hvam, Jørn Marcher

    1999-01-01

    In this work we present an experimental technique for investigating ultrafast carrier dynamics in semiconductor optical amplifiers at room temperature. These dynamics, influenced by carrier heating, spectral hole-burning and two-photon absorption, are very important for device applications in inf...

  8. Semiconductor radiation detectors: device physics

    National Research Council Canada - National Science Library

    Lutz, Gerhard

    1999-01-01

    ..., including nuclear physics, elementary particle physics, optical and x-ray astronomy, medicine, and materials testing - and the number of applications is growing continually. Closely related, and initiated by the application of semiconductors, is the development of low-noise low-power integrated electronics for signal readout. The success of semicond...

  9. Review of semiconductor drift detectors

    Science.gov (United States)

    Gatti, Emilio; Rehak, Pavel

    2005-04-01

    A short review of semiconductor drift detectors is given. The emphasis is given to detectors intended for tracking of fast charged particles for experiments in particle physics and high energy heavy-ion physics. The use and performance of this kind of detector in past, present and future experiments is described together with the experience learned during the design, production and data taking phases.

  10. Atomistic Models of Amorphous Semiconductors

    NARCIS (Netherlands)

    Jarolimek, K.

    2011-01-01

    Crystalline silicon is probably the best studied material, widely used by the semiconductor industry. The subject of this thesis is an intriguing form of this element namely amorphous silicon. It can contain a varying amount of hydrogen and is denoted as a-Si:H. It completely lacks the neat long

  11. 2010 Defects in Semiconductors GRC

    Energy Technology Data Exchange (ETDEWEB)

    Shengbai Zhang

    2011-01-06

    Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, as well as an emphasis on the development of novel defect detection methods and first-principles defect theories. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference will deal with point and extended defects in a broad range of electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, oxides, sp{sup 2} carbon based-materials, and photovoltaic/solar cell materials, and in understanding important defect phenomena such as doping bottleneck in nanostructures and the diffusion of defects and impurities. The program consists of about twenty invited talks and a number of contributed poster sessions. The emphasis should be on work which has yet to be published. The large amount of discussion time provides an ideal forum for dealing with topics that are new and/or controversial.

  12. Towards filament free semiconductor lasers

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.

    2000-01-01

    We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...... propagation structures in lasers and amplifiers which suppress lateral reflections....

  13. A Brief History of ... Semiconductors

    Science.gov (United States)

    Jenkins, Tudor

    2005-01-01

    The development of studies in semiconductor materials is traced from its beginnings with Michael Faraday in 1833 to the production of the first silicon transistor in 1954, which heralded the age of silicon electronics and microelectronics. Prior to the advent of band theory, work was patchy and driven by needs of technology. However, the arrival…

  14. Calculation of the thermal mode in semiconductor devices in conditions of their operation in semiconductor apparatuses

    OpenAIRE

    Сосков, Анатолій Георгійович; Глєбова, Марина Леонідівна; Сабалаєва, Наталія Олегівна; Форкун, Яна Борисівна

    2014-01-01

    The study of the temperature field of power semiconductor devices, operating in semiconductor apparatuses, either non-contact or hybrid was carried out in the paper.It was also shown that the main mode of the current load of power semiconductor devices, operating in semiconductor apparatuses is a pulse mode.Analytical method for calculating the values of the temperature rise in the structure of power semiconductor devices when subjected to a current pulse of arbitrary shape based on a model t...

  15. Controlled growth of semiconductor crystals

    Science.gov (United States)

    Bourret-Courchesne, Edith D.

    1992-01-01

    A method for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B.sub.x O.sub.y are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T.sub.m1 of the oxide of boron (T.sub.m1 =723.degree. K. for boron oxide B.sub.2 O.sub.3), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T.sub.m2 of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm.sup.2. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 .mu.m.

  16. Transient photoconductivity in amorphous semiconductors

    International Nuclear Information System (INIS)

    Mpawenayo, P.

    1997-07-01

    Localized states in amorphous semiconductors are divided in disorder induced shallow trap levels and dangling bonds deep states. Dangling bonds are assumed here to be either neutral or charged and their energy distribution is a single gaussian. Here, it is shown analytically that transient photocurrent in amorphous semiconductors is fully controlled by charge carriers transitions between localized states for one part and tunneling hopping carriers on the other. Localized dangling bonds deep states act as non radiative recombination centres, while hopping tunnelling is assisted by the Coulomb interaction between defects sites. The half-width of defects distribution is the disorder parameter that determines the carrier hopping time between defects sites. The macroscopic time that explains the long decay response times observed will all types of amorphous semiconductors is duly thought to be temperature dependent. Basic equations developed by Longeaud and Kleider are solved for the general case of a semiconductor after photo-generation. It turns out that the transient photoconductivity decay has two components; one with short response times from carriers trap-release transitions between shallow levels and extended states and a hopping component made of inter-dependent exponentials whose time constants span in larger ranges depending on disorder. The photoconductivity hopping component appears as an additional term to be added to photocurrents derived from existing models. The results of the present study explain and complete the power law decay derived in the multiple trapping models developed 20 years ago only in the approximation of the short response time regime. The long response time regime is described by the hopping macroscopic time. The present model is verified for all samples of amorphous semiconductors known so far. Finally, it is proposed to improved the modulated photoconductivity calculation techniques by including the long-lasting hopping dark documents

  17. Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

    International Nuclear Information System (INIS)

    Walukiewicz, W.

    1988-02-01

    The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs

  18. Modulation spectroscopy characterization of MOCVD semiconductors and semiconductors structures

    Science.gov (United States)

    Pollak, Fred H.; Shen, H.

    1989-11-01

    This paper reviews recent developments in the use of contactless modulation spectroscopy to yield important information about MOCVD growth as well as the properties of MOCVD fabricated semiconductors and semiconductor microstructures. The method of reflectance difference spectroscopy can be used to gain significant insights into chemical and structural parameters during actual growth conditions. The electromodulation technique of photoreflectance (PR) probes the electronic states of the material. It has many applications for in-situ post-growth characterization of crystal quality, very thin Ga 1-xAl xAs/GaAs epitaxial layers, Ga 1-xAl xAs alloy composition, deep trap states, surface electric fields and carrier concentrations, lattice-mismatch strain, etc, as well as the determination of relevant parameters of heterojunction structures. In addition, recent PR experiments at 600°C on GaAs and Ga 0.82Al 0.18As show potential for in-situ monitoring during growth.

  19. Hypersonic modes in nanophononic semiconductors.

    Science.gov (United States)

    Hepplestone, S P; Srivastava, G P

    2008-09-05

    Frequency gaps and negative group velocities of hypersonic phonon modes in periodically arranged composite semiconductors are presented. Trends and criteria for phononic gaps are discussed using a variety of atomic-level theoretical approaches. From our calculations, the possibility of achieving semiconductor-based one-dimensional phononic structures is established. We present results of the location and size of gaps, as well as negative group velocities of phonon modes in such structures. In addition to reproducing the results of recent measurements of the locations of the band gaps in the nanosized Si/Si{0.4}Ge{0.6} superlattice, we show that such a system is a true one-dimensional hypersonic phononic crystal.

  20. Spectroscopic analysis of optoelectronic semiconductors

    CERN Document Server

    Jimenez, Juan

    2016-01-01

    This book deals with standard spectroscopic techniques which can be used to analyze semiconductor samples or devices, in both, bulk, micrometer and submicrometer scale. The book aims helping experimental physicists and engineers to choose the right analytical spectroscopic technique in order to get specific information about their specific demands. For this purpose, the techniques including technical details such as apparatus and probed sample region are described. More important, also the expected outcome from experiments is provided. This involves also the link to theory, that is not subject of this book, and the link to current experimental results in the literature which are presented in a review-like style. Many special spectroscopic techniques are introduced and their relationship to the standard techniques is revealed. Thus the book works also as a type of guide or reference book for people researching in optical spectroscopy of semiconductors.

  1. Semiconductor electrolyte photovoltaic energy converter

    Science.gov (United States)

    Anderson, W. W.; Anderson, L. B.

    1975-01-01

    Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

  2. Semiconductor Nanowires: Epitaxy and Applications

    OpenAIRE

    Mårtensson, Thomas

    2008-01-01

    Semiconductor nanowires are nanoscale objects formed by bottom-up synthesis. In recent years their unique properties have been exploited in fields such as electronics, photonics, sensors and the life sciences. In this work, the epitaxial growth of nanowires and their applications were studied. Heteroepitaxial growth of III-V nanowires on silicon substrates was demonstrated. This may enable direct band gap materials for optoelectronic devices, as well as high-mobility, low-contact resis...

  3. Quantum correlations in semiconductor microcavities

    Science.gov (United States)

    Kira, M.; Hoyer, W.; Koch, S. W.; Brick, P.; Ell, C.; Hübner, M.; Khitrova, G.; Gibbs, H. M.

    2003-10-01

    The quantum mechanical nature of the light field in semiconductor microcavities leads to non-classical coupling effects between photons and electron-hole excitations. It is shown that these quantum correlations give rise to characteristic corrections of the semiclassical light-matter coupling dynamics. Examples of quantum correlation signatures include entanglement effects in the probe reflection of a microcavity system and squeezing in the incoherent emission.

  4. Modeling of Microwave Semiconductor Diodes

    Directory of Open Access Journals (Sweden)

    Z. Raida

    2008-09-01

    Full Text Available The paper deals with the multi-physical mode-ling of microwave diodes. The electrostatic, drift-diffusion and thermal phenomena are considered in the physical model of the components. The basic semiconductor equati-ons are summarized, and modeling issues are discussed. The simulations of the Gunn Effect in transferred electron devices and the carrier injection effect in PIN diodes are investigated and discussed. The analysis was performed in COMSOL Multiphysics using the finite element method.

  5. Modeling of Microwave Semiconductor Diodes

    OpenAIRE

    Pokorny, M.; Raida, Zbyněk

    2008-01-01

    The paper deals with the multi-physical mode-ling of microwave diodes. The electrostatic, drift-diffusion and thermal phenomena are considered in the physical model of the components. The basic semiconductor equati-ons are summarized, and modeling issues are discussed. The simulations of the Gunn Effect in transferred electron devices and the carrier injection effect in PIN diodes are investigated and discussed. The analysis was performed in COMSOL Multiphysics using the finite element method.

  6. Optoelectronics with 2D semiconductors

    Science.gov (United States)

    Mueller, Thomas

    2015-03-01

    Two-dimensional (2D) atomic crystals, such as graphene and layered transition-metal dichalcogenides, are currently receiving a lot of attention for applications in electronics and optoelectronics. In this talk, I will review our research activities on electrically driven light emission, photovoltaic energy conversion and photodetection in 2D semiconductors. In particular, WSe2 monolayer p-n junctions formed by electrostatic doping using a pair of split gate electrodes, type-II heterojunctions based on MoS2/WSe2 and MoS2/phosphorene van der Waals stacks, 2D multi-junction solar cells, and 3D/2D semiconductor interfaces will be presented. Upon optical illumination, conversion of light into electrical energy occurs in these devices. If an electrical current is driven, efficient electroluminescence is obtained. I will present measurements of the electrical characteristics, the optical properties, and the gate voltage dependence of the device response. In the second part of my talk, I will discuss photoconductivity studies of MoS2 field-effect transistors. We identify photovoltaic and photoconductive effects, which both show strong photoconductive gain. A model will be presented that reproduces our experimental findings, such as the dependence on optical power and gate voltage. We envision that the efficient photon conversion and light emission, combined with the advantages of 2D semiconductors, such as flexibility, high mechanical stability and low costs of production, could lead to new optoelectronic technologies.

  7. Identification of defects in semiconductors

    CERN Document Server

    Stavola, Michael; Weber, Eicke R; Stavola, Michael

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this traditi...

  8. Dry etching technology for semiconductors

    CERN Document Server

    Nojiri, Kazuo

    2015-01-01

    This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

  9. New Icosahedral Boron Carbide Semiconductors

    Science.gov (United States)

    Echeverria Mora, Elena Maria

    Novel semiconductor boron carbide films and boron carbide films doped with aromatic compounds have been investigated and characterized. Most of these semiconductors were formed by plasma enhanced chemical vapor deposition. The aromatic compound additives used, in this thesis, were pyridine (Py), aniline, and diaminobenzene (DAB). As one of the key parameters for semiconducting device functionality is the metal contact and, therefore, the chemical interactions or band bending that may occur at the metal/semiconductor interface, X-ray photoemission spectroscopy has been used to investigate the interaction of gold (Au) with these novel boron carbide-based semiconductors. Both n- and p-type films have been tested and pure boron carbide devices are compared to those containing aromatic compounds. The results show that boron carbide seems to behave differently from other semiconductors, opening a way for new analysis and approaches in device's functionality. By studying the electrical and optical properties of these films, it has been found that samples containing the aromatic compound exhibit an improvement in the electron-hole separation and charge extraction, as well as a decrease in the band gap. The hole carrier lifetimes for each sample were extracted from the capacitance-voltage, C(V), and current-voltage, I(V), curves. Additionally, devices, with boron carbide with the addition of pyridine, exhibited better collection of neutron capture generated pulses at ZERO applied bias, compared to the pure boron carbide samples. This is consistent with the longer carrier lifetimes estimated for these films. The I-V curves, as a function of external magnetic field, of the pure boron carbide films and films containing DAB demonstrate that significant room temperature negative magneto-resistance (> 100% for pure samples, and > 50% for samples containing DAB) is possible in the resulting dielectric thin films. Inclusion of DAB is not essential for significant negative magneto

  10. Electronic properties of semiconductor surfaces and metal/semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Tallarida, M.

    2005-05-15

    This thesis reports investigations of the electronic properties of a semiconductor surface (silicon carbide), a reactive metal/semiconductor interface (manganese/silicon) and a non-reactive metal/semiconductor interface (aluminum-magnesium alloy/silicon). The (2 x 1) reconstruction of the 6H-SiC(0001) surface has been obtained by cleaving the sample along the (0001) direction. This reconstruction has not been observed up to now for this compound, and has been compared with those of similar elemental semiconductors of the fourth group of the periodic table. This comparison has been carried out by making use of photoemission spectroscopy, analyzing the core level shifts of both Si 2p and C 1s core levels in terms of charge transfer between atoms of both elements and in different chemical environments. From this comparison, a difference between the reconstruction on the Si-terminated and the C-terminated surface was established, due to the ionic nature of the Si-C bond. The growth of manganese films on Si(111) in the 1-5 ML thickness range has been studied by means of LEED, STM and photoemission spectroscopy. By the complementary use of these surface science techniques, two different phases have been observed for two thickness regimes (<1 ML and >1 ML), which exhibit a different electronic character. The two reconstructions, the (1 x 1)-phase and the ({radical}3 x {radical}3)R30 -phase, are due to silicide formation, as observed in core level spectroscopy. The growth proceeds via island formation in the monolayer regime, while the thicker films show flat layers interrupted by deep holes. On the basis of STM investigations, this growth mode has been attributed to strain due to lattice mismatch between the substrate and the silicide. Co-deposition of Al and Mg onto a Si(111) substrate at low temperature (100K) resulted in the formation of thin alloy films. By varying the relative content of both elements, the thin films exhibited different electronic properties

  11. Roadmap on semiconductor-cell biointerfaces

    Science.gov (United States)

    Tian, Bozhi; Xu, Shuai; Rogers, John A.; Cestellos-Blanco, Stefano; Yang, Peidong; Carvalho-de-Souza, João L.; Bezanilla, Francisco; Liu, Jia; Bao, Zhenan; Hjort, Martin; Cao, Yuhong; Melosh, Nicholas; Lanzani, Guglielmo; Benfenati, Fabio; Galli, Giulia; Gygi, Francois; Kautz, Rylan; Gorodetsky, Alon A.; Kim, Samuel S.; Lu, Timothy K.; Anikeeva, Polina; Cifra, Michal; Krivosudský, Ondrej; Havelka, Daniel; Jiang, Yuanwen

    2018-05-01

    This roadmap outlines the role semiconductor-based materials play in understanding the complex biophysical dynamics at multiple length scales, as well as the design and implementation of next-generation electronic, optoelectronic, and mechanical devices for biointerfaces. The roadmap emphasizes the advantages of semiconductor building blocks in interfacing, monitoring, and manipulating the activity of biological components, and discusses the possibility of using active semiconductor-cell interfaces for discovering new signaling processes in the biological world.

  12. Porous and Nanoporous Semiconductors and Emerging Applications

    Directory of Open Access Journals (Sweden)

    Helmut Föll

    2006-01-01

    Full Text Available Pores in single-crystalline semiconductors can be produced in a wide range of geometries and morphologies, including the “nanometer” regime. Porous semiconductors may have properties completely different from the bulk, and metamaterials with, for example, optical properties not encountered in natural materials are emerging. Possible applications of porous semiconductors include various novel sensors, but also more “exotic” uses as, for example, high explosives or electrodes for micro-fuel cells. The paper briefly reviews pore formation (including more applied aspects of large area etching, properties of porous semiconductors, and emerging applications.

  13. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji

    2008-01-01

    This monograph describes fascinating recent progress in the field of chaos, stability and instability of semiconductor lasers. Applications and future prospects are discussed in detail. The book emphasizes the various dynamics induced in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Recent results of both theoretical and experimental investigations are presented. Demonstrating applications of semiconductor laser chaos, control and noise, Semiconductor Lasers describes suppression and chaotic secure communications. For those who are interested in optics but not familiar with nonlinear systems, a brief introduction to chaos analysis is presented.

  14. Emission and Absorption Entropy Generation in Semiconductors

    DEFF Research Database (Denmark)

    Reck, Kasper; Varpula, Aapo; Prunnila, Mika

    2013-01-01

    While emission and absorption entropy generation is well known in black bodies, it has not previously been studied in semiconductors, even though semiconductors are widely used for solar light absorption in modern solar cells [1]. We present an analysis of the entropy generation in semiconductor...... materials due to emission and absorption of electromagnetic radiation. It is shown that the emission and absorption entropy generation reduces the fundamental limit on the efficiency of any semiconductor solar cell even further than the Landsberg limit. The results are derived from purely thermodynamical...

  15. Scanning electron microscopy of semiconductor materials

    International Nuclear Information System (INIS)

    Bresse, J.F.; Dupuy, M.

    1978-01-01

    The use of scanning electron microscopy in semiconductors opens up a large field of use. The operating modes lending themselves to the study of semiconductors are the induced current, cathodoluminescence and the use of the potential contrast which can also be applied very effectively to the study of the devices (planar in particular). However, a thorough knowledge of the mechanisms of the penetration of electrons, generation and recombination of generated carriers in a semiconductor is necessary in order to attain a better understanding of the operating modes peculiar to semiconductors [fr

  16. Semiconductor power devices physics, characteristics, reliability

    CERN Document Server

    Lutz, Josef; Scheuermann, Uwe; De Doncker, Rik

    2011-01-01

    Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. In practice, not only the semiconductor, but also the thermal and mechanical properties of packaging and interconnection technologies are esse

  17. Ion implantation in semiconductor bodies

    International Nuclear Information System (INIS)

    Badawi, M.H.

    1984-01-01

    Ions are selectively implanted into layers of a semiconductor substrate of, for example, semi-insulating gallium arsenide via a photoresist implantation mask and a metallic layer of, for example, titanium disposed between the substrate surface and the photoresist mask. After implantation the mask and metallic layer are removed and the substrate heat treated for annealing purposes. The metallic layer acts as a buffer layer and prevents possible contamination of the substrate surface, by photoresist residues, at the annealing stage. Such contamination would adversely affect the electrical properties of the substrate surface, particularly gallium arsenide substrates. (author)

  18. Quantum Optical Effects in Semiconductors

    Science.gov (United States)

    Hoyer, W.; Kira, M.; Koch, S. W.

    Quantum optical effects in semiconductors are studied using a density-matrix approach which takes into account the many-body Coulomb interaction among the charge carriers, coupling to lattice vibrations, and the quantum nature of light. The theory provides a consistent set of equations which is used to compute photoluminescence spectra, predict the emission of squeezed light, investigate correlations between photons emitted by quantum-well structures, and to show examples where light-matter entanglement influences experiments done with classical optical fields.

  19. Electron beam writing on semiconductors

    International Nuclear Information System (INIS)

    Bierhenke, H.; Kutzer, E.; Pascher, A.; Plitzner, H.; Rummel, P.; Siemens A.G., Muenchen; Siemens A.G., Muenchen

    1979-08-01

    Reported are the results of the 3 1/2 year research project 'Electron beam Writing on Semiconductors'. Work has been done in the field of direct wafer exposure techniques, and of mask making. Described are resist technology, setting up of a research device, exploration of alignment procedures, manufacturing of devices and their radiation influence. Furthermore, investigations and measurements of an electron beam machine bought for mask making purposes, the development of LSI-circuits with this machine, the software necessary and important developments of digital subsystems are reported. (orig.) [de

  20. Bistable amphoteric centers in semiconductors

    International Nuclear Information System (INIS)

    Nikitina, A. G.; Zuev, V. V.

    2008-01-01

    It is shown that, at thermodynamic equilibrium, the release of charge carriers from the localized states of bistable amphoteric centers into quasi-free states depends on the degree of compensation. This brings about different functional dependences of the concentration of free charge carriers on temperature. It is found that, in uncompensated semiconductors, the concentration of free charge carriers follows the same dependence in the case of bistable amphoteric centers and bistable amphoteric U - centers, although the distributions of charge carriers over the charge states and configurations are different for these types of centers. The results can be used for interpreting various experimental data insufficiently explained in the context of the traditional approach