Thermophysical spectroscopy of defect states in silicon

International Nuclear Information System (INIS)

Igamberdyev, Kh.T.; Mamadalimov, A.T.; Khabibullaev, P.K.

1989-01-01

The present work deals with analyzing the possibilities of using the non-traditional thermophysical methods to study a defect structure in silicon. For this purpose, the temperature dependences of thermophysical properties of defect silicon are investigated. A number of new, earlier unknown physical phenomena in silicon are obtained, and their interpretation has enabled one to establish the main physical mechanisms of formation of deep defect states in silicon

Symmetric extendibility of quantum states

OpenAIRE

Nowakowski, Marcin L.

2015-01-01

Studies on symmetric extendibility of quantum states become especially important in a context of analysis of one-way quantum measures of entanglement, distilabillity and security of quantum protocols. In this paper we analyse composite systems containing a symmetric extendible part with a particular attention devoted to one-way security of such systems. Further, we introduce a new one-way monotone based on the best symmetric approximation of quantum state. We underpin those results with geome...

Extended Islanded Reverse Sural Artery Flap for Staged Reconstruction of Foot Defects Proximal to Toes

International Nuclear Information System (INIS)

Yousaf, M.A.; Abidin, Z.U.; Khalid, K.; Haq, A.U.; Tarar, F.A.; Asif, M.U.; Tarar, M.N.

2018-01-01

To assess the outcome of extended delayed reverse sural artery flap for reconstruction of foot defects proximal to toes in terms of flap survival, complication and extended area. Study Design:Case series. Place and Duration of Study:Jinnah Burn and Reconstructive Surgery Centre, Lahore, from February 2015 to April 2017. Methodology:Cases who underwent delayed sural artery flap were inducted. Preoperative hand-held doppler was done to confirm the location of perforator. Two suitable perforators were chosen to raise the extended flap by crossing the proximal limit in all cases. The pedicle was kept minimum 3 cm wide and perfusion was assessed. Flap was delayed for one week and vaccum-assisted closure (VAC) dressing was applied over wound. The second surgery was performed after one week. Proximal perforator was clamped and ligated after checking adequate perfusion of flap. Flap was insetted into defect. Results:Thirty-two patients were reconstructed with delayed reverse sural artery flap. The mean age of the patients was 26.5 +12.2 years. Twenty-four (75%) patients were males and 8 (25%) were females. Twenty-two (68.7%) cases were degloving wounds after road traffic accidents (RTA), 6 (18.7%) were diabetic foot wounds, 4 (12.5%) sustained injury after falling from height and 7 (21.8%) patients had fracture of metatarsals. Twenty-eight flaps were transferred after one week delay, and only in 4 cases, flap were transferred after two weeks. All flaps survived completely. Complications of infection noted in 3 (9.3%) flaps, 3 (9.3%) flaps showed tip necrosis, 2 (6.2%) flaps undergone epidermolysis and only 2 (6.2%) showed venous congestion. Conclusion:Delayed islanded reverse sural artery perforator flap is a reliable and versatile option for resurfacing soft tissue defects of lower limb proximal to the toes with lesser complications and extended coverage area. (author)

Extended Islanded Reverse Sural Artery flap for Staged Reconstruction of Foot Defects Proximal to Toes.

Science.gov (United States)

Yousaf, Muhammad Amin; Abidin, Zain Ul; Khalid, Kamran; Haq, Ata Ul; Khalid, Farrukh Aslam; Tarar, Faraz Ahmad; Asif, Muhammad Umar; Tarar, Moazzam Nazeer

2018-02-01

Obective:To assess the outcome of extended delayed reverse sural artery flap for reconstruction of foot defects proximal to toes in terms of flap survival, complication and extended area. Case series. Jinnah Burn and Reconstructive Surgery Centre, Lahore, from February 2015 to April 2017. Cases who underwent delayed sural artery flap were inducted. Preoperative hand-held doppler was done to confirm the location of perforator. Two suitable perforators were chosen to raise the extended flap by crossing the proximal limit in all cases. The pedicle was kept minimum 3 cm wide and perfusion was assessed. Flap was delayed for one week and vaccum-assisted closure (VAC) dressing was applied over wound. The second surgery was performed after one week. Proximal perforator was clamped and ligated after checking adequate perfusion of flap. Flap was insetted into defect. Thirty-two patients were reconstructed with delayed reverse sural artery flap. The mean age of the patients was 26.5 12.2 years. Twenty-four (75%) patients were males and 8 (25%) were females. Twenty-two (68.7%) cases were degloving wounds after road traffic accidents (RTA), 6 (18.7%) were diabetic foot wounds, 4 (12.5%) sustained injury after falling from height and 7 (21.8%) patients had fracture of metatarsals. Twenty-eight flaps were transferred after one week delay, and only in 4 cases, flap were transferred after two weeks. All flaps survived completely. Complications of infection noted in 3 (9.3%) flaps, 3 (9.3%) flaps showed tip necrosis, 2 (6.2%) flaps undergone epidermolysis and only 2 (6.2%) showed venous congestion. Delayed islanded reverse sural artery perforator flap is a reliable and versatile option for resurfacing soft tissue defects of lower limb proximal to the toes with lesser complications and extended coverage area.

Modeling of extrinsic extended defect evolution in ion-implanted silicon upon thermal annealing

International Nuclear Information System (INIS)

Ortiz, C.J.; Cristiano, F.; Colombeau, B.; Claverie, A.; Cowern, N.E.B.

2004-01-01

A physically motivated model that accounts for the spatial and temporal evolution of extended defect distribution in ion-implanted Si is presented. Free physical parameters are extracted from experimental data and by means of a genetic algorithm (GA). Transmission electron microscopy (TEM) data and self-interstitial oversaturation measurements are combined in the same fitting procedure to eliminate unphysical solutions and find the optimum set of parameters. The calibration of parameters shows that binding energies of small self-interstitial clusters exhibit strong minima, as reported in other investigations. It is demonstrated that the calibrated model we propose is able to predict a wide variety of physical phenomena, from the oversaturation of self-interstitials via the mean-size distribution of {1 1 3} defects to the depth distribution of the density of the latter

Shallow nitrogen ion implantation: Evolution of chemical state and defect structure in titanium

Energy Technology Data Exchange (ETDEWEB)

Manojkumar, P.A., E-mail: manoj@igcar.gov.in [Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Chirayath, V.A.; Balamurugan, A.K.; Krishna, Nanda Gopala; Ilango, S.; Kamruddin, M.; Amarendra, G.; Tyagi, A.K. [Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Raj, Baldev [National Institute of Advanced Studies, Bangalore 560 012 (India)

2016-09-15

Highlights: • Low energy nitrogen ion implantation in titanium was studied. • Chemical and defect states were analyzed using SIMS, XPS and PAS. • SIMS and depth resolved XPS data showed good agreement. • Depth resolved defect and chemical states information were revealed. • Formation of 3 layers of defect states proposed to fit PAS results. - Abstract: Evolution of chemical states and defect structure in titanium during low energy nitrogen ion implantation by Plasma Immersion Ion Implantation (PIII) process is studied. The underlying process of chemical state evolution is investigated using secondary ion mass spectrometry and X-ray photoelectron spectroscopy. The implantation induced defect structure evolution as a function of dose is elucidated using variable energy positron annihilation Doppler broadening spectroscopy (PAS) and the results were corroborated with chemical state. Formation of 3 layers of defect state was modeled to fit PAS results.

A nanoscale characterisation of extended defects in glassy-like As2Se3 semiconductors with PAL technique

International Nuclear Information System (INIS)

Shpotyuk, O.; Kovalskiy, A.; Filipecki, J.; Hyla, M.; Kozdras, A.

2003-01-01

A meaningful interpretation of positron lifetime characteristics for glassy-like g-As 2 Se 3 is developed taking into account calculations of Jensen et al. (J. Non-Cryst. Solids 170 (1994) 57) for positrons trapped by free-volume extended defects in orthorhombic As 2 Se 3 and void volume distribution for 146-atoms layer-biased model of amorphous As 2 Se 3 presented by Popescu (J. Non-Cryst. Solids 35-36 (1980) 549). The obtained results are compared for samples having different thermal pre-history. Two groups of experimental results with close lifetime characteristics are distinguished for each of the investigated samples. This feature is explained in terms of average positron lifetime by applying two-state positron trapping model for mathematical treatment of the obtained spectra

Extended defects in MBE-grown CdTe-based solar cells

Energy Technology Data Exchange (ETDEWEB)

Wichrowska, Karolina; Wosinski, Tadeusz; Kret, Slawomir; Chusnutdinow, Sergij; Karczewski, Grzegorz [Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Rawski, Michal [Analytical Laboratory, Maria Curie-Sklodowska University, Lublin (Poland); Yastrubchak, Oksana [Institute of Physics, Maria Curie-Sklodowska University, Lublin (Poland)

2015-08-15

Extended defects in the p -ZnTe/n -CdTe heterojunctions grown by the molecular-beam epitaxy technique on two different substrates, GaAs and CdTe, have been investigated by deep-level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). Four hole traps, called H1 to H4, and one electron trap, called E3, have been revealed in the DLTS spectra measured for the heterojunctions grown on the GaAs substrates. The H1, H3, H4 and E3 traps have been attributed to the electronic states of dislocations on the ground of their logarithmic capture kinetics. The DLTS peaks associated with the H1 and E3 traps were not observed in the DLTS spectra measured for the heterojunction grown on the CdTe substrate. They are most likely associated with threading dislocations generated at the mismatched interface with the GaAs substrate. Cross-sectional TEM images point out that they are dislocations of the 60 -type. In both the types of heterojunctions the H4 trap was observed only under forward-bias filling pulse, suggesting that this trap is associated with the CdTe/ZnTe interface. In addition, TEM images revealed also the presence of intrinsic and extrinsic stacking faults in the CdTe layers, which may considerably affect their electronic properties. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Exotic Non-Abelian Topological Defects in Lattice Fractional Quantum Hall States

Science.gov (United States)

Liu, Zhao; Möller, Gunnar; Bergholtz, Emil J.

2017-09-01

We investigate extrinsic wormholelike twist defects that effectively increase the genus of space in lattice versions of multicomponent fractional quantum Hall systems. Although the original band structure is distorted by these defects, leading to localized midgap states, we find that a new lowest flat band representing a higher genus system can be engineered by tuning local single-particle potentials. Remarkably, once local many-body interactions in this new band are switched on, we identify various Abelian and non-Abelian fractional quantum Hall states, whose ground-state degeneracy increases with the number of defects, i.e, with the genus of space. This sensitivity of topological degeneracy to defects provides a "proof of concept" demonstration that genons, predicted by topological field theory as exotic non-Abelian defects tied to a varying topology of space, do exist in realistic microscopic models. Specifically, our results indicate that genons could be created in the laboratory by combining the physics of artificial gauge fields in cold atom systems with already existing holographic beam shaping methods for creating twist defects.

Computer simulation of the interaction between an extended dislocation and radiation defects in the fcc lattice

International Nuclear Information System (INIS)

Kuramoto, E.; Nakamura, Y.; Tsutsumi, T.

1993-01-01

The interaction between an extended dislocation and a radiation-induced defect, especially, a self-interstitial atom (SIA), has been investigated in the model fcc lattice by computer simulation technique. An SIA was absorbed into the core of one of the two partial dislocations of the extended screw dislocation as a crowdion which extends along the dislocation line. Under the applied shear stress this crowdion acted as a pinning point, resulting in irradiation hardening. On the other hand, an SIA was absorbed at the jog site of the extended edge dislocation (at one of the two jog sites on two partial dislocations) and after some relaxation the total jog was shifted to one atomic distance through the spreading out of the strain due to an SIA from one partial side to the other side. (orig.)

Localized and Extended States in a Disordered Trap

International Nuclear Information System (INIS)

Pezze, Luca; Sanchez-Palencia, Laurent

2011-01-01

We study Anderson localization in a disordered potential combined with an inhomogeneous trap. We show that the spectrum displays both localized and extended states, which coexist at intermediate energies. In the region of coexistence, we find that the extended states result from confinement by the trap and are weakly affected by the disorder. Conversely, the localized states correspond to eigenstates of the disordered potential, which are only affected by the trap via an inhomogeneous energy shift. These results are relevant to disordered quantum gases and we propose a realistic scheme to observe the coexistence of localized and extended states in these systems.

Extended Lagrangian Excited State Molecular Dynamics.

Science.gov (United States)

Bjorgaard, J A; Sheppard, D; Tretiak, S; Niklasson, A M N

2018-02-13

An extended Lagrangian framework for excited state molecular dynamics (XL-ESMD) using time-dependent self-consistent field theory is proposed. The formulation is a generalization of the extended Lagrangian formulations for ground state Born-Oppenheimer molecular dynamics [Phys. Rev. Lett. 2008 100, 123004]. The theory is implemented, demonstrated, and evaluated using a time-dependent semiempirical model, though it should be generally applicable to ab initio theory. The simulations show enhanced energy stability and a significantly reduced computational cost associated with the iterative solutions of both the ground state and the electronically excited states. Relaxed convergence criteria can therefore be used both for the self-consistent ground state optimization and for the iterative subspace diagonalization of the random phase approximation matrix used to calculate the excited state transitions. The XL-ESMD approach is expected to enable numerically efficient excited state molecular dynamics for such methods as time-dependent Hartree-Fock (TD-HF), Configuration Interactions Singles (CIS), and time-dependent density functional theory (TD-DFT).

Stress and Strain State Analysis of Defective Pipeline Portion

Science.gov (United States)

Burkov, P. V.; Burkova, S. P.; Knaub, S. A.

2015-09-01

The paper presents computer simulation results of the pipeline having defects in a welded joint. Autodesk Inventor software is used for simulation of the stress and strain state of the pipeline. Places of the possible failure and stress concentrators are predicted on the defective portion of the pipeline.

Coupling of atom-by-atom calculations of extended defects with B kick-out equations: application to the simulation of boron ted

International Nuclear Information System (INIS)

Lampin, E.; Cristiano, F.; Lamrani, Y.; Colombeau, B.

2004-01-01

We present simulations of B TED based on a complete calculation of the extended defect growth/shrinkage during annealing. The Si self-interstitial supersaturation calculated at the extended defect depth is coupled to the set of equations for the B kick-out diffusion through a generation/recombination term in the diffusion equation of the Si self-interstitials. The simulations are compared to the measurements performed on a Si wafer containing several B marker layers, where the amount of TED varies from one peak to the other. The good agreement obtained on this experiment is very promising for the application of these calculations to the case of ultra-shallow B + implants

Spin helical states and spin transport of the line defect in silicene lattice

Energy Technology Data Exchange (ETDEWEB)

Yang, Mou; Chen, Dong-Hai; Wang, Rui-Qiang [Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006 (China); Bai, Yan-Kui, E-mail: ykbai@semi.ac.cn [College of Physical Science and Information Engineering and Hebei Advance Thin Films Laboratory, Hebei Normal University, Shijiazhuang, Hebei 050024 (China)

2015-02-06

We investigated the electronic structure of a silicene-like lattice with a line defect under the consideration of spin–orbit coupling. In the bulk energy gap, there are defect related bands corresponding to spin helical states localized beside the defect line: spin-up electrons flow forward on one side near the line defect and move backward on the other side, and vice versa for spin-down electrons. When the system is subjected to random distribution of spin-flipping scatterers, electrons suffer much less spin-flipped scattering when they transport along the line defect than in the bulk. An electric gate above the line defect can tune the spin-flipped transmission, which makes the line defect as a spin-controllable waveguide. - Highlights: • Band structure of silicene with a line defect. • Spin helical states around the line defect and their probability distribution features. • Spin transport along the line defect and that in the bulk silicene.

Evolution of extended defects in polycrystalline Au-irradiated UO{sub 2} using in situ TEM: Temperature and fluence effects

Energy Technology Data Exchange (ETDEWEB)

Onofri, C., E-mail: claire.onofri@cea.fr [CEA, DEN, DEC, F-13108 Saint Paul Lez Durance Cedex (France); Sabathier, C. [CEA, DEN, DEC, F-13108 Saint Paul Lez Durance Cedex (France); Baumier, C.; Bachelet, C. [CSNSM/CNRS, PARIS-SUD University, F-91400 Orsay (France); Palancher, H. [CEA, DEN, DEC, F-13108 Saint Paul Lez Durance Cedex (France); Legros, M. [CEMES/CNRS, F-31055 Toulouse Cedex 4 (France)

2016-12-15

In situ Transmission Electron Microscopy irradiations were performed on polycrystalline UO{sub 2} thin foils with 4 MeV gold ions at three different temperatures: 600 °C, room and liquid nitrogen temperature. In order to study the dislocation evolution and to determine the growth mechanisms, the dislocation loop and line densities and the loop size repartition were monitored as a function of fluence, and irradiation temperature. We show that dislocation loops, with Burgers vectors along the <110> directions, evolve into dislocation lines with increasing fluence by a loop overlapping mechanism. Furthermore, a fluence offset is highlighted between the irradiations performed at high and low temperature due to an increase of the defect mobility. Indeed, a growth by Oswald ripening is probably activated at room temperature and 600 °C and changes the kinetic evolution of loops into lines. After this transformation, and for all the irradiation temperatures, a steady state equilibrium is reached where both extended defects (dislocation lines and small dislocations loops -around 5 nm in size-) are observed simultaneously. A continuous nucleation of small dislocation loops and of nanometer-sized cavities formed directly by irradiation is also highlighted.

c-Axis correlated extended defects and critical current in YBa2Cu3Ox films grown on Au and Ag-nano dot decorated substrates

International Nuclear Information System (INIS)

Mikheenko, P.; Sarkar, A.; Dang, V.-S.; Tanner, J.L.; Abell, J.S.; Crisan, A.

2009-01-01

We report measurements of critical current in YBa 2 Cu 3 O x films deposited on SrTiO 3 substrates decorated with silver and gold nanodots. An increase in critical current in these films, in comparison with the films deposited on non-decorated substrates, has been achieved. We argue that this increase comes from the c-axis correlated extended defects formed in the films and originated from the nanodots. Additionally to creating extended defects, the nanodots pin them and prevent their exit from the sample during the film growth, thus keeping a high density of defects and providing a lower rate of decrease of the critical current with the thickness of the films. The best pinning is achieved in the samples with silver nanodots by optimising their deposition temperature. The nanodots grown at a temperature of a few hundred deg. C have a small diameter of a few nanometres and a high surface density of 10 11 -10 12 particles/cm 2 . We give evidence of c-axis correlated extended defects in YBa 2 Cu 3 O x films by planar and cross-sectional atomic force microscopy, transmission electron microscopy and angle-dependent transport measurements of critical current.

Intrinsic Defects and H Doping in WO3

KAUST Repository

Zhu, Jiajie

2017-01-18

WO3 is widely used as industrial catalyst. Intrinsic and/or extrinsic defects can tune the electronic properties and extend applications to gas sensors and optoelectonics. However, H doping is a challenge to WO3, the relevant mechanisms being hardly understood. In this context, we investigate intrinsic defects and H doping by density functional theory and experiments. Formation energies are calculated to determine the lowest energy defect states. O vacancies turn out to be stable in O-poor environment, in agreement with X-ray photoelectron spectroscopy, and O-H bond formation of H interstitial defects is predicted and confirmed by Fourier transform infrared spectroscopy.

A nanoscale characterisation of extended defects in glassy-like As{sub 2}Se{sub 3} semiconductors with PAL technique

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O.; Kovalskiy, A.; Filipecki, J.; Hyla, M.; Kozdras, A

2003-12-31

A meaningful interpretation of positron lifetime characteristics for glassy-like g-As{sub 2}Se{sub 3} is developed taking into account calculations of Jensen et al. (J. Non-Cryst. Solids 170 (1994) 57) for positrons trapped by free-volume extended defects in orthorhombic As{sub 2}Se{sub 3} and void volume distribution for 146-atoms layer-biased model of amorphous As{sub 2}Se{sub 3} presented by Popescu (J. Non-Cryst. Solids 35-36 (1980) 549). The obtained results are compared for samples having different thermal pre-history. Two groups of experimental results with close lifetime characteristics are distinguished for each of the investigated samples. This feature is explained in terms of average positron lifetime by applying two-state positron trapping model for mathematical treatment of the obtained spectra.

Optical density of states in ultradilute GaAsN alloy: Coexistence of free excitons and impurity band of localized and delocalized states

Energy Technology Data Exchange (ETDEWEB)

Bhuyan, Sumi; Pal, Bipul; Bansal, Bhavtosh, E-mail: bhavtosh@iiserkol.ac.in [Indian Institute of Science Education and Research Kolkata, Mohanpur Campus, Nadia 741252, West Bengal (India); Das, Sanat K.; Dhar, Sunanda [Department of Electronic Science, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India)

2014-07-14

Optically active states in liquid phase epitaxy-grown ultra-dilute GaAsN are studied. The feature-rich low temperature photoluminescence spectrum has contributions from excitonic band states of the GaAsN alloy, and two types of defect states—localized and extended. The degree of delocalization for extended states both within the conduction and defect bands, characterized by the electron temperature, is found to be similar. The degree of localization in the defect band is analyzed by the strength of the phonon replicas. Stronger emission from these localized states is attributed to their giant oscillator strength.

Computer experiment studies on mechanisms for irradiation induced defect production and annealing processes. Final report

International Nuclear Information System (INIS)

Beeler, J.R. Jr.; Beeler, M.F.

1979-06-01

This research is based on pair potentials used in the Brookhaven work. It extends their use in defect production simulations to the 5 MeV range and characterizes the short term annealing of the primary defect states. Defect properties and interactions are studied. Defect interactions include carbon, helium, and misfit metallic substitutional impurity interactions with vacancy and interstitial defects as well as vacancy-vacancy, interstitial-interstitial and vacancy-interstitial interactions

Computer experiment studies on mechanisms for irradiation induced defect production and annealing processes. Final report

Energy Technology Data Exchange (ETDEWEB)

Beeler, J.R. Jr.; Beeler, M.F.

1979-06-01

This research is based on pair potentials used in the Brookhaven work. It extends their use in defect production simulations to the 5 MeV range and characterizes the short term annealing of the primary defect states. Defect properties and interactions are studied. Defect interactions include carbon, helium, and misfit metallic substitutional impurity interactions with vacancy and interstitial defects as well as vacancy-vacancy, interstitial-interstitial and vacancy-interstitial interactions. (FS)

Chiral filtration-induced spin/valley polarization in silicene line defects

Science.gov (United States)

Ren, Chongdan; Zhou, Benhu; Sun, Minglei; Wang, Sake; Li, Yunfang; Tian, Hongyu; Lu, Weitao

2018-06-01

The spin/valley polarization in silicene with extended line defects is investigated according to the chiral filtration mechanism. It is shown that the inner-built quantum Hall pseudo-edge states with identical chirality can serve as a chiral filter with a weak magnetic field and that the transmission process is restrained/strengthened for chiral states with reversed/identical chirality. With two parallel line defects, which act as natural chiral filtration, the filter effect is greatly enhanced, and 100% spin/valley polarization can be achieved.

Defect States Emerging from a Non-Hermitian Flatband of Photonic Zero Modes

Science.gov (United States)

Qi, Bingkun; Zhang, Lingxuan; Ge, Li

2018-03-01

We show the existence of a flatband consisting of photonic zero modes in a gain and loss modulated lattice system as a result of the underlying non-Hermitian particle-hole symmetry. This general finding explains the previous observation in parity-time symmetric systems where non-Hermitian particle-hole symmetry is hidden. We further discuss the defect states in these systems, whose emergence can be viewed as an unconventional alignment of a pseudospin under the influence of a complex-valued pseudomagnetic field. These defect states also behave as a chain with two types of links, one rigid in a unit cell and one soft between unit cells, as the defect states become increasingly localized with the gain and loss strength.

Localized topological states in Bragg multihelicoidal fibers with twist defects

Science.gov (United States)

Alexeyev, C. N.; Lapin, B. P.; Milione, G.; Yavorsky, M. A.

2016-06-01

We have studied the influence of a twist defect in multihelicoidal Bragg fibers on the emerging of localized defect modes. We have shown that if such a fiber is excited with a Gaussian beam this leads to the appearance of a defect-localized topological state, whose topological charge coincides with the order of rotational symmetry of the fiber's refractive index. We have shown that this effect has a pronounced crossover behavior. We have also formulated a principle of creating the systems that can nestle defect-localized topologically charged modes. According to this principle, such systems have to possess topological activity, that is, the ability to change the topological charge of the incoming field, and operate in the Bragg regime.

A harmonic transition state theory model for defect initiation in crystals

International Nuclear Information System (INIS)

Delph, T J; Cao, P; Park, H S; Zimmerman, J A

2013-01-01

We outline here a model for the initiation of defects in crystals based upon harmonic transition state theory (hTST). This model combines a previously developed model for zero-temperature defect initiation with a multi-dimensional hTST model that is capable of accurately predicting the effects of temperature and loading rate upon defect initiation. The model has several features that set it apart from previous efforts along these lines, most notably a straightforward method of determining the energy barrier between adjacent equilibrium states that does not depend upon a priori information concerning the nature of the defect. We apply the model to two examples, triaxial stretching of a perfect fcc crystal and nanoindentation of a gold substrate. Very good agreement is found between the predictions of the model and independent molecular dynamics (MD) simulations. Among other things, the model predicts a strong dependence of the defect initiation behavior upon the loading parameter. A very attractive feature of this model is that it is valid for arbitrarily slow loading rates, in particular loading rates achievable in the laboratory, and suffers from none of the limitations in this regard inherent in MD simulations. (paper)

Quantum information processing using designed defect states in

DEFF Research Database (Denmark)

Pedersen, Jesper; Flindt, Christian; Mortensen, Niels Asger

2007-01-01

We propose a new physical implementation of spin qubits for quantum information processing, namely defect states in antidot lattices de¯ned in the two-dimensional electron gas at a semiconductor heterostructure. Calculations of the band structure of the periodic antidot lattice are presented...

Localized-to-extended-states transition below the Fermi level

Science.gov (United States)

Tito, M. A.; Pusep, Yu. A.

2018-05-01

Time-resolved photoluminescence is employed to examine a transition from localized to extended electron states below the Fermi level in multiple narrow quantum well GaAs/AlGaAs heterostructures, where disorder was generated by interface roughness. Such a transition resembles the metal-insulator transition profoundly investigated by electric transport measurements. An important distinction distinguishes the localized-to-extended-states transition studied here: it takes place below the Fermi level in an electron system with a constant concentration, which implies unchanging Coulomb correlations. Moreover, for such a localized-to-extended-states transition the temperature is shown to be irrelevant. In the insulating regime the magnetic field was found to cause an additional momentum relaxation which considerably enhanced the recombination rate. Thus, we propose a method to explore the evolution of the localized electron states in a system with a fixed disorder and Coulomb interaction.

Secondary defects in non-metallic solids

International Nuclear Information System (INIS)

Ashbee, K.H.G.; Hobbs, L.W.

1977-01-01

This paper points out features of secondary defect formation which are peculiar to non-metallic solids (excluding elemental semiconductors). Most of the materials of interest are compounds of two or more (usually more or less ionic) atomic species, and immediate consequence of which is a need to maintain both stoichiometry (or accommodate non-stoichiometry) and order. Primary defects in these solids, whether produced thermally, chemically or by irradiation, seldom are present or aggregate in exactly stoichiometric proportions, and the resulting extending defect structures can be quite distinct from those found in metallic solids. Where stoichiometry is maintained, it is often convenient to describe extended defects in terms of alterations in the arrangement of 'molecular' units. The adoption of this procedure enables several novel features of extended defect structures in non-metals to be explained. There are several ways in which a range of non-stoichiometry can be accommodated, which include structural elimination of point defects, nucleation of new coherent phases of altered stoichiometry, and decomposition. (author)

BIRTH DEFECTS IN FOUR U.S. WHEAT-PRODUCING STATES

Science.gov (United States)

Birth Defects in Four U.S. Wheat - Producing StatesDina M. Schreinemachers, National Health and Environmental Effects Research Laboratory, Office of Research and Development, U.S. Environmental Protection Agency, Research Triangle Park, NC 27711Wheat agriculture in Mi...

Charge transfer of edge states in zigzag silicene nanoribbons with Stone–Wales defects from first-principles

Energy Technology Data Exchange (ETDEWEB)

Ting, Xie [College of Mathematics and Statistics, Chongqing University, Chongqing 401331 (China); School of Mathematics and Statistic, Chongqing University of Technology, Chongqing 400054 (China); Rui, Wang, E-mail: rcwang@cqu.edu.cn [Institute for Structure and Function and Department of Physics, Chongqing University, Chongqing 400044 (China); State Key Laboratory of Theoretical Physics, Institute of Theoretical Physics, Chinese Academy of Science, Beijing 100190 (China); Shaofeng, Wang [Institute for Structure and Function and Department of Physics, Chongqing University, Chongqing 400044 (China); Xiaozhi, Wu, E-mail: xiaozhiwu@cqu.edu.cn [Institute for Structure and Function and Department of Physics, Chongqing University, Chongqing 400044 (China)

2016-10-15

Highlights: • The properties of SW defects in silicene and ZSNRs are obtained. • The SW defects at the edge of ZSNRs induce a sizable gap. • The charge transfer of edge states is resulted from SW defects in ZSNRS. - Abstract: Stone–Wales (SW) defects are favorably existed in graphene-like materials with honeycomb lattice structure and potentially employed to change the electronic properties in band engineering. In this paper, we investigate structural and electronic properties of SW defects in silicene sheet and its nanoribbons as a function of their concentration using the methods of periodic boundary conditions with first-principles calculations. We first calculate the formation energy, structural properties, and electronic band structures of SW defects in silicene sheet, with dependence on the concentration of SW defects. Our results show a good agreement with available values from the previous first-principles calculations. The energetics, structural aspects, and electronic properties of SW defects with dependence on defect concentration and location in edge-hydrogenated zigzag silicene nanoribbons are obtained. For all calculated concentrations, the SW defects prefer to locate at the edge due to the lower formation energy. The SW defects at the center of silicene nanoribbons slightly influence on the electronic properties, whereas the SW defects at the edge of silicene nanoribbons split the degenerate edge states and induce a sizable gap, which depends on the concentration of defects. It is worth to find that the SW defects produce a perturbation repulsive potential, which leads the decomposed charge of edge states at the side with defect to transfer to the other side without defect.

Defect-Induced Hedgehog Polarization States in Multiferroics

Science.gov (United States)

Li, Linze; Cheng, Xiaoxing; Jokisaari, Jacob R.; Gao, Peng; Britson, Jason; Adamo, Carolina; Heikes, Colin; Schlom, Darrell G.; Chen, Long-Qing; Pan, Xiaoqing

2018-03-01

Continuous developments in nanotechnology require new approaches to materials synthesis that can produce novel functional structures. Here, we show that nanoscale defects, such as nonstoichiometric nanoregions (NSNRs), can act as nano-building blocks for creating complex electrical polarization structures in the prototypical multiferroic BiFeO3 . An array of charged NSNRs are produced in BiFeO3 thin films by tuning the substrate temperature during film growth. Atomic-scale scanning transmission electron microscopy imaging reveals exotic polarization rotation patterns around these NSNRs. These polarization patterns resemble hedgehog or vortex topologies and can cause local changes in lattice symmetries leading to mixed-phase structures resembling the morphotropic phase boundary with high piezoelectricity. Phase-field simulations indicate that the observed polarization configurations are mainly induced by charged states at the NSNRs. Engineering defects thus may provide a new route for developing ferroelectric- or multiferroic-based nanodevices.

Entanglement Classification of extended Greenberger-Horne-Zeilinger-Symmetric States

OpenAIRE

Jung, Eylee; Park, DaeKil

2013-01-01

In this paper we analyze entanglement classification of extended Greenberger-Horne-Zeilinger-symmetric states $\\rho^{ES}$, which is parametrized by four real parameters $x$, $y_1$, $y_2$ and $y_3$. The condition for separable states of $\\rho^{ES}$ is analytically derived. The higher classes such as bi-separable, W, and Greenberger-Horne-Zeilinger classes are roughly classified by making use of the class-specific optimal witnesses or map from the extended Greenberger-Horne-Zeilinger symmetry t...

Macro-defect free cements. State of art

International Nuclear Information System (INIS)

Holanda, J.N.F.; Povoa, G.E.A.M.; Souza, G.P.; Pinatti, D.G.

1998-01-01

The purpose of this work is to prevent a state of art about macro-defect-free cement pastes (MDF cement ) of high mechanical strength. This new type of cement paste is obtained through addition of a water-soluble polymer, followed by intense shear mixing and application of low compacting pressure. It is presented fundamental aspects related to the processing of this MDF paste, as well as its main properties and applications are discussed. (author)

Defect states in microcrystalline silicon probed by photoluminescence spectroscopy

International Nuclear Information System (INIS)

Merdzhanova, T.; Carius, R.; Klein, S.; Finger, F.; Dimova-Malinovska, D.

2006-01-01

Photoluminescence (PL) spectroscopy is used to investigate defects and localized band tail states within the band gap of hydrogenated microcrystalline silicon (μc-Si:H) prepared by plasma enhanced chemical vapor deposition (PECVD) and hot wire chemical vapor deposition (HWCVD). The effect of the substrate temperature (T S ), which influences mainly the defect density, and silane concentration (SC), as Key parameter to control the microstructure of the material were varied. In high quality μc-Si:H films (T S = 185-200 deg. C) a PL band ('μc'-Si-band) is observed at ∼ 0.9-1.05 eV which is attributed to radiative recombination via localized band tail states in the microcrystalline phase. In μc-Si:H films prepared at higher T S (> 300 deg. C), an additional PL band at ∼ 0.7 eV with a width of ∼ 0.17 eV is found for both PECVD and HWCVD material. This band maintains its position at ∼ 0.7 eV with increasing SC in contrast to the observed shift of the 'μc'-Si-band to higher energies. Studies of the temperature dependences of the PL peak energy and intensity for the two bands show: (i) the PL band at 0.7 eV remains unaffected upon increasing temperature, while the 'μc'-Si-band shifts to lower energies (ii) a much weaker quenching for the 0.7 eV band compared to the 'μc'-Si-band. It was also found that the PL band at 0.7 eV exhibits a slightly stronger temperature dependence of the PL intensity compared to 'defect' band at 0.9 eV in a-Si:H suggesting similar recombination transition via deeper trap states. Due to a similar PL properties of the emission band previously observed in Czochralski-grown silicon (Cz-Si), the 0.7 eV band in μc-Si:H is assigned tentatively to defect-related transitions in the crystalline phase

"SAFEGUARDING THE INTERESTS OF THE STATE" FROM DEFECTIVE DELINQUENT GIRLS.

Science.gov (United States)

Sohasky, Kate E

2016-01-01

The 1911 mental classification, "defective delinquent," was created as a temporary legal-medical category in order to identify a peculiar class of delinquent girls in a specific institutional setting. The defective delinquent's alleged slight mental defect, combined with her appearance of normalcy, rendered her a "dangerous" and "incurable" citizen. At the intersection of institutional history and the history of ideas, this article explores the largely overlooked role of borderline mental classifications of near-normalcy in the medicalization of intelligence and criminality during the first third of the twentieth-century United States. Borderline classifications served as mechanisms of control over women's bodies through the criminalization of their minds, and the advent of psychometric tests legitimated and facilitated the spread of this classification beyond its original and intended context. The borderline case of the defective delinquent girl demonstrates the significance of marginal mental classifications to the policing of bodies through the medicalization of intellect. © 2015 Wiley Periodicals, Inc.

An all-silicon laser by coupling between electronic localized states and defect states of photonic crystal

Energy Technology Data Exchange (ETDEWEB)

Huang Weiqi, E-mail: WQHuang2001@yahoo.com [Institute of Nanophotonic Physics, Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550025 (China); Huang Zhongmei; Miao Xinjiang; Cai Chenlan; Liu Jiaxin; Lue Quan [Institute of Nanophotonic Physics, Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550025 (China); Liu Shirong, E-mail: Shirong@yahoo.com [State Key Laboratory of Ore Deposit Geochemistry Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003 (China); Qin Chaojian [State Key Laboratory of Ore Deposit Geochemistry Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003 (China)

2012-01-15

In a nano-laser of Si quantum dots (QD), the smaller QD fabricated by nanosecond pulse laser can form the pumping level tuned by the quantum confinement (QC) effect. Coupling between the active centers formed by localized states of surface bonds and the two-dimensional (2D) photonic crystal is used to select model in the nano-laser. The experimental demonstration is reported in which the peaks of stimulated emission at about 600 nm and 700 nm were observed on the Si QD prepared in oxygen after annealing which improves the stimulated emission. It is interesting to make a comparison between the localized electronic states in gap due to defect formed by surface bonds and the localized photonic states in gap of photonic band due to defect of 2D photonic crystal.

Manipulating affective state using extended picture presentations.

Science.gov (United States)

Sutton, S K; Davidson, R J; Donzella, B; Irwin, W; Dottl, D A

1997-03-01

Separate, extended series of positive, negative, and neutral pictures were presented to 24 (12 men, 12 women) undergraduates. Each series was presented on a different day, with full counterbalancing of presentation orders. Affective state was measured using (a) orbicularis oculi activity in response to acoustic startle probes during picture presentation, (b) corrugator supercilii activity between and during picture presentation, and (c) changes in self-reports of positive and negative affect. Participants exhibited larger eyeblink reflex magnitudes when viewing negative than when viewing positive pictures. Corrugator activity was also greater during the negative than during the positive picture set, during both picture presentation and the period between pictures. Self-reports of negative affect increased in response to the negative picture set, and self-reports of positive affect were greatest following the positive picture set. These findings suggest that extended picture presentation is an effective method of manipulating affective state and further highlight the utility of startle probe and facial electromyographic measures in providing on-line readouts of affective state.

Positron annihilation lifetime study of extended defects in semiconductor glasses and polymers

Energy Technology Data Exchange (ETDEWEB)

Boyko, Olha [Department of Pediatric Dentistry, Danylo Halytsky Lviv National Medical University, Pekarska str. 69, 79010 Lviv (Ukraine); Shpotyuk, Yaroslav [Department of Optoelectronics and Information Technologies, Ivan Franko National University of Lviv, Dragomanova str. 50, 79005 Lviv (Ukraine); Lviv Scientific Research Institute of Materials, Scientific Research Company ' ' Carat' ' , Stryjska str. 202, 79031 Lviv (Ukraine); Filipecki, Jacek [Institute of Physics, Jan Dlugosz University in Czestochowa, Armii Krajowej al. 13/15, 42200 Czestochowa (Poland)

2013-01-15

The processes of atomic shrinkage in network-forming solids initiated by external influences are tested using technique of positron annihilation lifetime spectroscopy at the example of chalcogenide vitreous semiconductors of arsenic sulphide type and acrylic polymers for dental application. Two state positron trapping is shown to be responsible for atomic shrinkage in chalcogenide glasses, while mixed trapping and ortho-positronium decaying is character for volumetric densification and stress propagation in acrylic dental polymers. At the basis of the obtained results it is concluded that correct analysis of externally-induced shrinkage in polymer networks under consideration can be developed by using original positron lifetime data treatment algorithms to compensate defect-free bulk annihilation channel within two-state positron trapping model and account for an interbalance between simultaneously co-existing positron trapping and orth-positronium related decaying channels within mixed three-state positron annihilation model (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Positron annihilation lifetime study of extended defects in semiconductor glasses and polymers

International Nuclear Information System (INIS)

Boyko, Olha; Shpotyuk, Yaroslav; Filipecki, Jacek

2013-01-01

The processes of atomic shrinkage in network-forming solids initiated by external influences are tested using technique of positron annihilation lifetime spectroscopy at the example of chalcogenide vitreous semiconductors of arsenic sulphide type and acrylic polymers for dental application. Two state positron trapping is shown to be responsible for atomic shrinkage in chalcogenide glasses, while mixed trapping and ortho-positronium decaying is character for volumetric densification and stress propagation in acrylic dental polymers. At the basis of the obtained results it is concluded that correct analysis of externally-induced shrinkage in polymer networks under consideration can be developed by using original positron lifetime data treatment algorithms to compensate defect-free bulk annihilation channel within two-state positron trapping model and account for an interbalance between simultaneously co-existing positron trapping and orth-positronium related decaying channels within mixed three-state positron annihilation model (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The effects of self-interstitial clusters on cascade defect evolution beyond the primary damage state

Energy Technology Data Exchange (ETDEWEB)

Heinisch, H.L. [Pacific Northwest National Lab., Richland, WA (United States)

1997-04-01

The intracascade evolution of the defect distributions of cascades in copper is investigated using stochastic annealing simulations applied to cascades generated with molecular dynamics (MD). The temperature and energy dependencies of annihilation, clustering and free defect production are determined for individual cascades. The annealing simulation results illustrate the strong influence on intracascade evolution of the defect configuration existing in the primary damage state. Another factor significantly affecting the evolution of the defect distribution is the rapid one-dimensional diffusion of small, glissile interstitial loops produced directly in cascades. This phenomenon introduces a cascade energy dependence of defect evolution that is apparent only beyond the primary damage state, amplifying the need for further study of the annealing phase of cascade evolution and for performing many more MD cascade simulations at higher energies.

The effects of self-interstitial clusters on cascade defect evolution beyond the primary damage state

International Nuclear Information System (INIS)

Heinisch, H.L.

1997-01-01

The intracascade evolution of the defect distributions of cascades in copper is investigated using stochastic annealing simulations applied to cascades generated with molecular dynamics (MD). The temperature and energy dependencies of annihilation, clustering and free defect production are determined for individual cascades. The annealing simulation results illustrate the strong influence on intracascade evolution of the defect configuration existing in the primary damage state. Another factor significantly affecting the evolution of the defect distribution is the rapid one-dimensional diffusion of small, glissile interstitial loops produced directly in cascades. This phenomenon introduces a cascade energy dependence of defect evolution that is apparent only beyond the primary damage state, amplifying the need for further study of the annealing phase of cascade evolution and for performing many more MD cascade simulations at higher energies

Exotic superconducting states in the extended attractive Hubbard model.

Science.gov (United States)

Nayak, Swagatam; Kumar, Sanjeev

2018-04-04

We show that the extended attractive Hubbard model on a square lattice allows for a variety of superconducting phases, including exotic mixed-symmetry phases with [Formula: see text] and [Formula: see text] symmetries, and a novel [Formula: see text] state. The calculations are performed within the Hartree-Fock Bardeen-Cooper-Schrieffer framework. The ground states of the mean-field Hamiltonian are obtained via a minimization scheme that relaxes the symmetry constraints on the superconducting solutions, hence allowing for a mixing of s-, p- and d-wave order parameters. The results are obtained within the assumption of uniform-density states. Our results show that extended attractive Hubbard model can serve as an effective model for investigating properties of exotic superconductors.

Quantifying the levitation picture of extended states in lattice models

OpenAIRE

Pereira, Ana. L. C.; Schulz, P. A.

2002-01-01

The behavior of extended states is quantitatively analyzed for two-dimensional lattice models. A levitation picture is established for both white-noise and correlated disorder potentials. In a continuum limit window of the lattice models we find simple quantitative expressions for the extended states levitation, suggesting an underlying universal behavior. On the other hand, these results point out that the quantum Hall phase diagrams may be disorder dependent.

Extended random-phase approximation with three-body ground-state correlations

International Nuclear Information System (INIS)

Tohyama, M.; Schuck, P.

2008-01-01

An extended random-phase approximation (ERPA) which contains the effects of ground-state correlations up to a three-body level is applied to an extended Lipkin model which contains an additional particle-scattering term. Three-body correlations in the ground state are necessary to preserve the hermiticity of the Hamiltonian matrix of ERPA. Two approximate forms of ERPA which neglect the three-body correlations are also applied to investigate the importance of three-body correlations. It is found that the ground-state energy is little affected by the inclusion of the three-body correlations. On the contrary, three-body correlations for the excited states can become quite important. (orig.)

Calculation of propellant gas pressure by simple extended corresponding state principle

OpenAIRE

Bin Xu; San-jiu Ying; Xin Liao

2016-01-01

The virial equation can well describe gas state at high temperature and pressure, but the difficulties in virial coefficient calculation limit the use of virial equation. Simple extended corresponding state principle (SE-CSP) is introduced in virial equation. Based on a corresponding state equation, including three characteristic parameters, an extended parameter is introduced to describe the second virial coefficient expressions of main products of propellant gas. The modified SE-CSP second ...

Numerical analysis of a main crack interactions with micro-defects/inhomogeneities using two-scale generalized/extended finite element method

Science.gov (United States)

Malekan, Mohammad; Barros, Felício B.

2017-12-01

Generalized or extended finite element method (G/XFEM) models the crack by enriching functions of partition of unity type with discontinuous functions that represent well the physical behavior of the problem. However, this enrichment functions are not available for all problem types. Thus, one can use numerically-built (global-local) enrichment functions to have a better approximate procedure. This paper investigates the effects of micro-defects/inhomogeneities on a main crack behavior by modeling the micro-defects/inhomogeneities in the local problem using a two-scale G/XFEM. The global-local enrichment functions are influenced by the micro-defects/inhomogeneities from the local problem and thus change the approximate solution of the global problem with the main crack. This approach is presented in detail by solving three different linear elastic fracture mechanics problems for different cases: two plane stress and a Reissner-Mindlin plate problems. The numerical results obtained with the two-scale G/XFEM are compared with the reference solutions from the analytical, numerical solution using standard G/XFEM method and ABAQUS as well, and from the literature.

Effect of metal contamination on recombination properties of extended defects in multicrystalline Si

Energy Technology Data Exchange (ETDEWEB)

Feklisova, O.V.; Yakimov, E.B. [Institute of Microelectronics Technology, RAS, Chernogolovka 142432 (Russian Federation); Yu, X.; Yang, D. [State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China)

2012-10-15

The effect of iron and copper contamination on the recombination properties of extended defects in multicrystalline Si is investigated by the Electron Beam Induced Current (EBIC) method. Plastically deformed Si samples containing dislocations and dislocation trails are also studied for a comparison. It is shown that Fe contamination leads to an essential increase of the EBIC contrast of electrically active grain boundaries and dislocation trails. The EBIC contrast of deformation induced dislocations also increases after iron diffusion while the recombination activity of grown-in dislocations in multicrystalline Si does not practically change after such treatment. Cu contamination also leads to an essential increase of the EBIC contrast of electrically active grain boundaries and dislocation trails. But dislocation contrast in both plastically deformed Si and multicrystalline Si does not practically increase after Cu contamination. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy

Science.gov (United States)

Hsiao, F.-M.; Schnedler, M.; Portz, V.; Huang, Y.-C.; Huang, B.-C.; Shih, M.-C.; Chang, C.-W.; Tu, L.-W.; Eisele, H.; Dunin-Borkowski, R. E.; Ebert, Ph.; Chiu, Y.-P.

2017-01-01

We demonstrate the potential of sub-bandgap laser-excited cross-sectional scanning tunneling microscopy and spectroscopy to investigate the presence of defect states in semiconductors. The characterization method is illustrated on GaN layers grown on Si(111) substrates without intentional buffer layers. According to high-resolution transmission electron microscopy and cathodoluminescence spectroscopy, the GaN layers consist of nanoscale wurtzite and zincblende crystallites with varying crystal orientations and hence contain high defect state densities. In order to discriminate between band-to-band excitation and defect state excitations, we use sub-bandgap laser excitation. We probe a clear increase in the tunnel current at positive sample voltages during sub-bandgap laser illumination for the GaN layer with high defect density, but no effect is found for high quality GaN epitaxial layers. This demonstrates the excitation of free charge carriers at defect states. Thus, sub-bandgap laser-excited scanning tunneling spectroscopy is a powerful complimentary characterization tool for defect states.

Composition Related Electrical Active Defect States of InGaAs and GaAsN

Directory of Open Access Journals (Sweden)

Arpad Kosa

2017-01-01

Full Text Available This paper discusses results of electrically active defect states - deep energy level analysis in InGaAs and GaAsN undoped semiconductor structures grown for solar cell applications. Main attention is focused on composition and growth condition dependent impurities and the investigation of their possible origins. For this purpose a widely utilized spectroscopy method, Deep Level Transient Fourier Spectroscopy, was utilized. The most significant responses of each sample labelled as InG2, InG3 and NG1, NG2 were discussed in detail and confirmed by simulations and literature data. The presence of a possible dual conduction type and dual state defect complex, dependent on the In/N composition, is reported. Beneficial characteristics of specific indium and nitrogen concentrations capable of eliminating or reducing certain point defects and dislocations are stated.

Evolution of Defect Structures and Deep Subgap States during Annealing of Amorphous In-Ga-Zn Oxide for Thin-Film Transistors

Science.gov (United States)

Jia, Junjun; Suko, Ayaka; Shigesato, Yuzo; Okajima, Toshihiro; Inoue, Keiko; Hosomi, Hiroyuki

2018-01-01

We investigate the evolution behavior of defect structures and the subgap states in In-Ga-Zn oxide (IGZO) films with increasing postannealing temperature by means of extended x-ray absorption fine-structure (EXAFS) measurements, positron annihilation lifetime spectroscopy (PALS), and cathodoluminescence (CL) spectroscopy, aiming to understand the relationship between defect structures and subgap states. EXAFS measurements reveal the varied oxygen coordination numbers around cations during postannealing and confirm two types of point defects, namely, excess oxygen around Ga atoms and oxygen deficiency around In and/or Zn atoms. PALS suggests the existence of cation-vacancy (VM )-related clusters with neutral or negative charge in both amorphous and polycrystalline IGZO films. CL spectra show a main emission band at approximately 1.85 eV for IGZO films, and a distinct shoulder located at about 2.15 eV for IGZO films postannealed above 600 °C . These two emission bands are assigned to a recombination between the electrons in the conduction band and/or in the shallow donor levels near the conduction band and the acceptors trapped above the valence-band maximum. The shallow donors are attributed to the oxygen deficiency, and the acceptors are thought to possibly arise from the excess oxygen or the VM-related clusters. These results open up an alternative route for understanding the device instability of amorphous IGZO-based thin-film transistors, especially the presence of the neutral or negatively charged VM-related clusters in amorphous IGZO films.

Birth Defects

Science.gov (United States)

A birth defect is a problem that happens while a baby is developing in the mother's body. Most birth defects happen during the first 3 months of ... in the United States is born with a birth defect. A birth defect may affect how the ...

Atypical extended electronic states in an infinite Vicsek fractal: An exact result

International Nuclear Information System (INIS)

Chakrabarti, A.; Bhattacharyya, B.

1996-01-01

We present a class of extended electronic wave functions on a Vicsek fractal. The transmittivity of arbitrarily large fractal lattices corresponding to these particular extended-state eigenvalues exhibits a power-law decay with increasing system size. The eigenvalues corresponding to the above extended states as well as the scaling law for the transmittivity have been exactly calculated using a real-space renormalization-group method. copyright 1996 The American Physical Society

An extended five-stream model for diffusion of ion-implanted dopants in monocrystalline silicon

International Nuclear Information System (INIS)

Khina, B.B.

2007-01-01

Low-energy high-dose ion implantation of different dopants (P, Sb, As, B and others) into monocrystalline silicon with subsequent thermal annealing is used for the formation of ultra-shallow p-n junctions in modern VLSI circuit technology. During annealing, dopant activation and diffusion in silicon takes place. The experimentally observed phenomenon of transient enhanced diffusion (TED), which is typically ascribed to the interaction of diffusing species with non-equilibrium point defects accumulated in silicon due to ion damage, and formation of small clusters and extended defects, hinders further down scaling of p-n junctions in VLSI circuits. TED is currently a subject of extensive experimental and theoretical investigation in many binary and multicomponent systems. However, the state-of-the-art mathematical models of dopant diffusion, which are based on the so-called 'five-stream' approach, and modern TCAD software packages such as SUPREM-4 (by Silvaco Data Systems, Ltd.) that implement these models encounter severe difficulties in describing TED. Solving the intricate problem of TED suppression and development of novel regimes of ion implantation and rapid thermal annealing is impossible without elaboration of new mathematical models and computer simulation of this complex phenomenon. In this work, an extended five-stream model for diffusion in silicon is developed which takes into account all possible charge states of point defects (vacancies and silicon self-interstitials) and diffusing pairs 'dopant atom-vacancy' and 'dopant atom-silicon self-interstitial'. The model includes the drift terms for differently charged point defects and pairs in the internal electric field and the kinetics of interaction between unlike 'species' (generation and annihilation of pairs and annihilation of point defects). Expressions for diffusion coefficients and numerous sink/source terms that appear in the non-linear, non-steady-state reaction-diffusion equations are derived

Defects in Cu(In,Ga)Se{sub 2} chalcopyrite semiconductors: a comparative study of material properties, defect states, and photovoltaic performance

Energy Technology Data Exchange (ETDEWEB)

Cao, Qing; Gunawan, Oki; Copel, Matthew; Reuter, Kathleen B; Chey, S Jay; Mitzi, David B [IBM T.J. Watson Research Center, Yorktown Heights, NY (United States); Deline, Vaughn R [IBM Almaden Resesarch Center, San Jose, CA (United States)

2011-10-15

Understanding defects in Cu(In,Ga)(Se,S){sub 2} (CIGS), especially correlating changes in the film formation process with differences in material properties, photovoltaic (PV) device performance, and defect levels extracted from admittance spectroscopy, is a critical but challenging undertaking due to the complex nature of this polycrystalline compound semiconductor. Here we present a systematic comparative study wherein varying defect density levels in CIGS films were intentionally induced by growing CIGS grains using different selenium activity levels. Material characterization results by techniques including X-ray diffraction, scanning electron microscopy, transmission electron microscopy, secondary ion mass spectrometry, X-ray photoelectron spectroscopy, and medium energy ion scattering indicate that this process variation, although not significantly affecting CIGS grain structure, crystal orientation, or bulk composition, leads to enhanced formation of a defective chalcopyrite layer with high density of indium or gallium at copper antisite defects ((In, Ga){sub Cu}) near the CIGS surface, for CIGS films grown with insufficient selenium supply. This defective layer or the film growth conditions associated with it is further linked with observed current-voltage characteristics, including rollover and crossover behavior, and a defect state at around 110 meV (generally denoted as the N1 defect) commonly observed in admittance spectroscopy. The impact of the (In, Ga){sub Cu} defects on device PV performance is also established. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Pattern and Management of acquired Facial defects in Imo State ...

African Journals Online (AJOL)

Imo State University Teaching Hospital Orlu, has the bulk of its patients drawn from neigbouring rural communities and are mainly of a low socioeconomic group. They therefore tend to present late with relatively complicated pathologies. This article looks at the pattern, aetiology and management approach for facial defects ...

Spatial-time-state fusion algorithm for defect detection through eddy current pulsed thermography

Science.gov (United States)

Xiao, Xiang; Gao, Bin; Woo, Wai Lok; Tian, Gui Yun; Xiao, Xiao Ting

2018-05-01

Eddy Current Pulsed Thermography (ECPT) has received extensive attention due to its high sensitive of detectability on surface and subsurface cracks. However, it remains as a difficult challenge in unsupervised detection as to identify defects without knowing any prior knowledge. This paper presents a spatial-time-state features fusion algorithm to obtain fully profile of the defects by directional scanning. The proposed method is intended to conduct features extraction by using independent component analysis (ICA) and automatic features selection embedding genetic algorithm. Finally, the optimal feature of each step is fused to obtain defects reconstruction by applying common orthogonal basis extraction (COBE) method. Experiments have been conducted to validate the study and verify the efficacy of the proposed method on blind defect detection.

Distributed Dynamic State Estimation with Extended Kalman Filter

Energy Technology Data Exchange (ETDEWEB)

Du, Pengwei; Huang, Zhenyu; Sun, Yannan; Diao, Ruisheng; Kalsi, Karanjit; Anderson, Kevin K.; Li, Yulan; Lee, Barry

2011-08-04

Increasing complexity associated with large-scale renewable resources and novel smart-grid technologies necessitates real-time monitoring and control. Our previous work applied the extended Kalman filter (EKF) with the use of phasor measurement data (PMU) for dynamic state estimation. However, high computation complexity creates significant challenges for real-time applications. In this paper, the problem of distributed dynamic state estimation is investigated. One domain decomposition method is proposed to utilize decentralized computing resources. The performance of distributed dynamic state estimation is tested on a 16-machine, 68-bus test system.

Estimation of the Dynamic States of Synchronous Machines Using an Extended Particle Filter

Energy Technology Data Exchange (ETDEWEB)

Zhou, Ning; Meng, Da; Lu, Shuai

2013-11-11

In this paper, an extended particle filter (PF) is proposed to estimate the dynamic states of a synchronous machine using phasor measurement unit (PMU) data. A PF propagates the mean and covariance of states via Monte Carlo simulation, is easy to implement, and can be directly applied to a non-linear system with non-Gaussian noise. The extended PF modifies a basic PF to improve robustness. Using Monte Carlo simulations with practical noise and model uncertainty considerations, the extended PF’s performance is evaluated and compared with the basic PF and an extended Kalman filter (EKF). The extended PF results showed high accuracy and robustness against measurement and model noise.

Ground state phase diagram of extended attractive Hubbard model

International Nuclear Information System (INIS)

Robaszkiewicz, S.; Chao, K.A.; Micnas, R.

1980-08-01

The ground state phase diagram of the extended Hubbard model with intraatomic attraction has been derived in the Hartree-Fock approximation formulated in terms of the Bogoliubov variational approach. For a given value of electron density, the nature of the ordered ground state depends essentially on the sign and the strength of the nearest neighbor coupling. (author)

Defect engineering: design tools for solid state electrochemical devices

International Nuclear Information System (INIS)

Tuller, Harry L.

2003-01-01

The interest in solid state electrochemical devices including sensors, fuel cells, batteries, oxygen permeation membranes, etc. has grown rapidly in recent years. Many of the same figures of merit apply to these different applications, the key ones being ionic conduction in solid electrolytes, mixed ionic-electronic conduction (MIEC) in electrodes and permeation membranes, and gas-solid reaction kinetics in sensors and fuel cells. Optimization of device performance often relies on the careful understanding and control of both ionic and electronic defects in the materials that make up the key device components. To date, most materials in use have been discovered serendipitously. A key focus of this paper is on the tools available to scientists and engineers to practice 'defect engineering' for the purpose of optimizing the performance of such materials. Dopants, controlled structural disorder, and interfaces are examined in relation to increasing the conductivity of solid electrolytes. The creation of defect bands is demonstrated as a means for introducing high levels of electronic conductivity into a solid electrolyte for the purpose of creating a mixed conductor and thereby a monolithic fuel cell structure. Dopants are also examined as a means of reducing losses in a high temperature resonant sensor platform. The control of microstructure, down to the nano-scale, is shown capable of inverting the predominant ionic to an electronic charge carrier and thereby markedly modifying electrical properties. Electrochemical bias and light are also discussed in terms of creating defects locally thereby providing means for micromachining a broad range of materials with precise dimensional control, low residual stress and controlled etch rates

Defects in conformal field theory

International Nuclear Information System (INIS)

Billò, Marco; Gonçalves, Vasco; Lauria, Edoardo; Meineri, Marco

2016-01-01

We discuss consequences of the breaking of conformal symmetry by a flat or spherical extended operator. We adapt the embedding formalism to the study of correlation functions of symmetric traceless tensors in the presence of the defect. Two-point functions of a bulk and a defect primary are fixed by conformal invariance up to a set of OPE coefficients, and we identify the allowed tensor structures. A correlator of two bulk primaries depends on two cross-ratios, and we study its conformal block decomposition in the case of external scalars. The Casimir equation in the defect channel reduces to a hypergeometric equation, while the bulk channel blocks are recursively determined in the light-cone limit. In the special case of a defect of codimension two, we map the Casimir equation in the bulk channel to the one of a four-point function without defect. Finally, we analyze the contact terms of the stress-tensor with the extended operator, and we deduce constraints on the CFT data. In two dimensions, we relate the displacement operator, which appears among the contact terms, to the reflection coefficient of a conformal interface, and we find unitarity bounds for the latter.

Defects in conformal field theory

Energy Technology Data Exchange (ETDEWEB)

Billò, Marco [Dipartimento di Fisica, Università di Torino, and Istituto Nazionale di Fisica Nucleare - sezione di Torino,Via P. Giuria 1 I-10125 Torino (Italy); Gonçalves, Vasco [Centro de Física do Porto,Departamento de Física e Astronomia Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre 687, 4169-007 Porto (Portugal); ICTP South American Institute for Fundamental Research Instituto de Física Teórica,UNESP - University Estadual Paulista,Rua Dr. Bento T. Ferraz 271, 01140-070, São Paulo, SP (Brazil); Lauria, Edoardo [Institute for Theoretical Physics, KU Leuven, Celestijnenlaan 200D, B-3001 Leuven (Belgium); Meineri, Marco [Perimeter Institute for Theoretical Physics,Waterloo, Ontario, N2L 2Y5 (Canada); Scuola Normale Superiore, and Istituto Nazionale di Fisica Nucleare - sezione di Pisa,Piazza dei Cavalieri 7 I-56126 Pisa (Italy)

2016-04-15

We discuss consequences of the breaking of conformal symmetry by a flat or spherical extended operator. We adapt the embedding formalism to the study of correlation functions of symmetric traceless tensors in the presence of the defect. Two-point functions of a bulk and a defect primary are fixed by conformal invariance up to a set of OPE coefficients, and we identify the allowed tensor structures. A correlator of two bulk primaries depends on two cross-ratios, and we study its conformal block decomposition in the case of external scalars. The Casimir equation in the defect channel reduces to a hypergeometric equation, while the bulk channel blocks are recursively determined in the light-cone limit. In the special case of a defect of codimension two, we map the Casimir equation in the bulk channel to the one of a four-point function without defect. Finally, we analyze the contact terms of the stress-tensor with the extended operator, and we deduce constraints on the CFT data. In two dimensions, we relate the displacement operator, which appears among the contact terms, to the reflection coefficient of a conformal interface, and we find unitarity bounds for the latter.

A study of the electrical properties of defects in silicon

International Nuclear Information System (INIS)

Blood, A.M.

1998-01-01

This work contains the most comprehensive qualitative and quantitative electron beam induced current (EBIC) study of recombination at contaminated defects in silicon. It is also a rigorous quantitative investigation of the effect of hydrogen on individual transition metal contaminated defects. In addition, the recombination behaviour exhibited by point and extended defects has been investigated using EBIC and deep level transient spectroscopy (DLTS). As a result of these measurements, techniques for the preparation of transition metal contaminated specimens have been refined. Successful hydrogen passivation of copper, nickel and iron contaminated silicon specimens containing oxidation-induced stacking faults has been achieved in two experimental systems. It is found that hydrogen passivates those states that are deepest in the semiconductor band gap in preference to those that are shallow. Furthermore, it has been concluded that during hydrogen passivation treatment, even at low temperatures, unwanted metallic impurities can be introduced. Three types of recombination behaviour have been identified from the defects-studied in this work and they are discussed with relevance to present recombination models. An investigation of the recombination behaviour of defects that lie in the depletion region and in the specimen bulk has concluded that the recombination type observed is independent of the depth of the defect. Evidence for the presence of compound defects showing mixed recombination behaviour type is presented. In conclusion, it is postulated that the transition metal impurities introduce a 'band of states' with a range of energies rather than a single energy state. This proposal is provided as an explanation for the recombination types found in this work and the effect of the hydrogen passivation. This work is placed in context of previous investigations into the behaviour of dislocations in silicon in the presence of transition metals, and the ability of

Learning Extended Finite State Machines

Science.gov (United States)

Cassel, Sofia; Howar, Falk; Jonsson, Bengt; Steffen, Bernhard

2014-01-01

We present an active learning algorithm for inferring extended finite state machines (EFSM)s, combining data flow and control behavior. Key to our learning technique is a novel learning model based on so-called tree queries. The learning algorithm uses the tree queries to infer symbolic data constraints on parameters, e.g., sequence numbers, time stamps, identifiers, or even simple arithmetic. We describe sufficient conditions for the properties that the symbolic constraints provided by a tree query in general must have to be usable in our learning model. We have evaluated our algorithm in a black-box scenario, where tree queries are realized through (black-box) testing. Our case studies include connection establishment in TCP and a priority queue from the Java Class Library.

A postprocessing method based on chirp Z transform for FDTD calculation of point defect states in two-dimensional phononic crystals

International Nuclear Information System (INIS)

Su Xiaoxing; Wang Yuesheng

2010-01-01

In this paper, a new postprocessing method for the finite difference time domain (FDTD) calculation of the point defect states in two-dimensional (2D) phononic crystals (PNCs) is developed based on the chirp Z transform (CZT), one of the frequency zooming techniques. The numerical results for the defect states in 2D solid/liquid PNCs with single or double point defects show that compared with the fast Fourier transform (FFT)-based postprocessing method, the method can improve the estimation accuracy of the eigenfrequencies of the point defect states significantly when the FDTD calculation is run with relatively few iterations; and furthermore it can yield the point defect bands without calculating all eigenfrequencies outside the band gaps. The efficiency and accuracy of the FDTD method can be improved significantly with this new postprocessing method.

A postprocessing method based on chirp Z transform for FDTD calculation of point defect states in two-dimensional phononic crystals

Energy Technology Data Exchange (ETDEWEB)

Su Xiaoxing, E-mail: xxsu@bjtu.edu.c [School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing 100044 (China); Wang Yuesheng [Institute of Engineering Mechanics, Beijing Jiaotong University, Beijing 100044 (China)

2010-09-01

In this paper, a new postprocessing method for the finite difference time domain (FDTD) calculation of the point defect states in two-dimensional (2D) phononic crystals (PNCs) is developed based on the chirp Z transform (CZT), one of the frequency zooming techniques. The numerical results for the defect states in 2D solid/liquid PNCs with single or double point defects show that compared with the fast Fourier transform (FFT)-based postprocessing method, the method can improve the estimation accuracy of the eigenfrequencies of the point defect states significantly when the FDTD calculation is run with relatively few iterations; and furthermore it can yield the point defect bands without calculating all eigenfrequencies outside the band gaps. The efficiency and accuracy of the FDTD method can be improved significantly with this new postprocessing method.

Determination of defect content and defect profile in semiconductor heterostructures

International Nuclear Information System (INIS)

Zubiaga, A; Garcia, J A; Plazaola, F; Zuniga-Perez, J; Munoz-Sanjose, V

2011-01-01

In this article we present an overview of the technique to obtain the defects depth profile and width of a deposited layer and multilayer based on positron annihilation spectroscopy. In particular we apply the method to ZnO and ZnO/ZnCdO layers deposited on sapphire substrates. After introducing some terminology we first calculate the trend that the W/S parameters of the Doppler broadening measurements must follow, both in a qualitative and quantitative way. From this point we extend the results to calculate the width and defect profiles in deposited layer samples.

Determination of defect content and defect profile in semiconductor heterostructures

Energy Technology Data Exchange (ETDEWEB)

Zubiaga, A [Laboratory of Physics, HUT, PO Box 1100, 02015 TKK, Espoo (Finland); Garcia, J A; Plazaola, F [Zientzia eta Teknologia Fakultatea, Euskal Herriko Unbertsitatea, P. K. 644, 48080, Bilbao (Spain); Zuniga-Perez, J; Munoz-Sanjose, V, E-mail: fernando.plazaola@ehu.es [Universitat de Valencia, Departamento de Fisica Aplicada i Electromagnetisme, Dr. Moliner 50, 46100 Burjassot, Valencia (Spain)

2011-01-10

In this article we present an overview of the technique to obtain the defects depth profile and width of a deposited layer and multilayer based on positron annihilation spectroscopy. In particular we apply the method to ZnO and ZnO/ZnCdO layers deposited on sapphire substrates. After introducing some terminology we first calculate the trend that the W/S parameters of the Doppler broadening measurements must follow, both in a qualitative and quantitative way. From this point we extend the results to calculate the width and defect profiles in deposited layer samples.

TCA Cycle Defects and Cancer: When Metabolism Tunes Redox State.

Science.gov (United States)

Cardaci, Simone; Ciriolo, Maria Rosa

2012-01-01

Inborn defects of the tricarboxylic acid (TCA) cycle enzymes have been known for more than twenty years. Until recently, only recessive mutations were described which, although resulted in severe multisystem syndromes, did not predispose to cancer onset. In the last ten years, a causal role in carcinogenesis has been documented for inherited and acquired alterations in three TCA cycle enzymes, succinate dehydrogenase (SDH), fumarate hydratase (FH), and isocitrate dehydrogenase (IDH), pointing towards metabolic alterations as the underlying hallmark of cancer. This paper summarizes the neoplastic alterations of the TCA cycle enzymes focusing on the generation of pseudohypoxic phenotype and the alteration of epigenetic homeostasis as the main tumor-promoting effects of the TCA cycle affecting defects. Moreover, we debate on the ability of these mutations to affect cellular redox state and to promote carcinogenesis by impacting on redox biology.

TCA Cycle Defects and Cancer: When Metabolism Tunes Redox State

Directory of Open Access Journals (Sweden)

Simone Cardaci

2012-01-01

Full Text Available Inborn defects of the tricarboxylic acid (TCA cycle enzymes have been known for more than twenty years. Until recently, only recessive mutations were described which, although resulted in severe multisystem syndromes, did not predispose to cancer onset. In the last ten years, a causal role in carcinogenesis has been documented for inherited and acquired alterations in three TCA cycle enzymes, succinate dehydrogenase (SDH, fumarate hydratase (FH, and isocitrate dehydrogenase (IDH, pointing towards metabolic alterations as the underlying hallmark of cancer. This paper summarizes the neoplastic alterations of the TCA cycle enzymes focusing on the generation of pseudohypoxic phenotype and the alteration of epigenetic homeostasis as the main tumor-promoting effects of the TCA cycle affecting defects. Moreover, we debate on the ability of these mutations to affect cellular redox state and to promote carcinogenesis by impacting on redox biology.

Theory of defects in Si and Ge: Past, present and recent developments

International Nuclear Information System (INIS)

Estreicher, S.K.; Backlund, D.; Gibbons, T.M.

2010-01-01

Over the past few decades, considerable progress has been achieved in the theoretical predictions of a wide range of properties of defects in semiconductors. In addition to structures, energetics, spin and charge densities, theory now routinely predicts accurate vibrational properties of defects, and thus connects to the optical characterization of light impurities. However, the positions of gap levels have yet to be predicted with systemically reliable accuracy. Today, supercells much larger than in the past are being used to describe defect centers from first principles. Systems large enough to study the dynamics of extended defects can be handled near the first-principles level. This paper contains a brief review of the key developments that have rendered theory quantitatively useful to experimentalists and an overview of the current 'state-of-the-art' and ongoing developments. Some of the remaining challenges are discussed, with examples in Si and Ge.

Nucleation of voids and other irradiation-produced defect aggregates

International Nuclear Information System (INIS)

Wiedersich, H.; Katz, J.L.

1976-01-01

The nucleation of defect clusters in crystalline solids from radiation-produced defects is different from the usual nucleation processes in one important aspect: the condensing defects, interstitial atoms and vacancies, can mutually annihilate and are thus similar to matter and antimatter. The nucleation process is described as the simultaneous reaction of vacancies and interstitials (and gas atoms if present) with embryos of all sizes. The reaction rates for acquisition of point defects (and gas atoms) are calculated from their respective jump frequencies and concentrations in the supersaturated system. The reaction rates for emission of point defects are derived from the free energies of the defect clusters in the thermodynamic equilibrium system, i.e., the system without excess point defects. This procedure differs from that used in conventional nucleation theory and permits the inclusion of the ''antimatter'' defect into the set of reaction-rate equations in a straightforward manner. The method is applied to steady-state nucleation, during irradiation, of both dislocation loops and voids in the absence and in the presence of immobile and mobile gas. The predictions of the nucleation theory are shown to be in qualitative agreement with experimental observations, e.g., void densities increase with increasing displacement rates; gases such as helium enhance void nucleation; at low displacement rates and at high temperatures the presence of gas is essential to void formation. For quantitative predictions, the theory must be extended to include the termination of nucleation

Theory of defect interactions in metals

International Nuclear Information System (INIS)

Thetford, Roger.

1989-09-01

The state relaxation program DEVIL has been updated to use N-body Finnis-Sinclair potentials. Initial calculations of self-interstitial and monovacancy formation energies confirm that the modified program is working correctly. An extra repulsive pair potential (constructed to leave the original fitting unaltered) overcomes some deficiencies in the published Finnis-Sinclair potentials. The modified potentials are used to calculate interstitial energies and relaxation in the b.c.c. transition metals vanadium, niobium, tantalum, molybdenum and tungsten. Further adaptation enables DEVIL to model dislocations running parallel to any lattice vector. Periodic boundary conditions are applied in the direction of the dislocation line, giving an infinite straight dislocation. The energies per unit length of two different dislocations are compared with experiment. A study of migration of point defects in the perfect lattice provides information on the mobility of interstitials and vacancies. The total energy needed to form and migrate an interstitial is compared with that required for a vacancy. The interaction between point defects and dislocations is studied in detail. Binding energies for both self-interstitials and monovacancies at edge dislocations are calculated for the five metals. Formation energies of the point defects in the neighbourhood of the edge dislocation are calculated for niobium, and the extend of the regions from which the defects are spontaneously absorbed are found. (author)

Stable π-Extended p -Quinodimethanes: Synthesis and Tunable Ground States

KAUST Repository

Zeng, Zebing

2014-12-18

© 2014 The Chemical Society of Japan and Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. p-Quinodimethane (p-QDM) is a highly reactive hydrocarbon showing large biradical character in the ground state. It has been demonstrated that incorporation of the p-QDM moiety into an aromatic hydrocarbon framework could lead to new π-conjugated systems with significant biradical character and unique optical, electronic and magnetic properties. On the other hand, the extension of p-QDM is expected to result in molecules with even larger biradical character and higher reactivity. Therefore, the synthesis of stable π-extended p-QDMs is very challenging. In this Personal Account we will briefly discuss different stabilizing strategies and synthetic methods towards stable π-extended p-QDMs with tunable ground states and physical properties, including two types of polycyclic hydrocarbons: (1) tetrabenzo-Tschitschibabin\\'s hydrocarbons, and (2) tetracyano-rylenequinodimethanes. We will discuss how the aromaticity, substituents and steric hindrance play important roles in determining their ground states and properties. Incorporation of the p-quinodimethane moiety into aromatic hydrocarbon frameworks can lead to new π-conjugated systems with significant biradical character and unique optical, electronic and magnetic properties. Furthermore, the extension of p-QDM is expected to result in molecules with even larger biradical character and higher reactivity. In this Personal Account, different stabilizing strategies and synthetic methods towards stable π-extended p-QDMs with tunable ground states and physical properties are briefly discussed, including the roles of aromaticity, substituents and steric hindrance.

Studies of defects and defect agglomerates by positron annihilation spectroscopy

DEFF Research Database (Denmark)

Eldrup, Morten Mostgaard; Singh, B.N.

1997-01-01

A brief introduction to positron annihilation spectroscopy (PAS), and in particular lo its use for defect studies in metals is given. Positrons injected into a metal may become trapped in defects such as vacancies, vacancy clusters, voids, bubbles and dislocations and subsequently annihilate from...... the trapped state iri the defect. The annihilation characteristics (e.g., the lifetime of the positron) can be measured and provide information about the nature of the defect (e.g., size, density, morphology). The technique is sensitive to both defect size (in the range from monovacancies up to cavities...

Defect-dependent elasticity: Nanoindentation as a probe of stress state

International Nuclear Information System (INIS)

Jarausch, K. F.; Kiely, J. D.; Houston, J. E.; Russell, P. E.

2000-01-01

Using an interfacial force microscope, the measured elastic response of 100-nm-thick Au films was found to be strongly correlated with the films' stress state and thermal history. Large, reversible variations (2x) of indentation modulus were recorded as a function of applied stress. Low-temperature annealing caused permanent changes in the films' measured elastic properties. The measured elastic response was also found to vary in close proximity to grain boundaries in thin films and near surface steps on single-crystal surfaces. These results demonstrate a complex interdependence of stress state, defect structure, and elastic properties in thin metallic films. (c) 2000 Materials Research Society

Extended SUSY quantum mechanics, intertwining operators and coherent states

International Nuclear Information System (INIS)

Bagarello, F.

2008-01-01

We propose an extension of supersymmetric quantum mechanics which produces a family of isospectral Hamiltonians. Our procedure slightly extends the idea of intertwining operators. Several examples of the construction are given. Further, we show how to build up vector coherent states of the Gazeau-Klauder type associated to our Hamiltonians

A Quantised State Systems Approach for Jacobian Free Extended Kalman Filtering

DEFF Research Database (Denmark)

Alminde, Lars; Bendtsen, Jan Dimon; Stoustrup, Jakob

2007-01-01

Model based methods for control of intelligent autonomous systems rely on a state estimate being available. One of the most common methods to obtain a state estimate for non-linear systems is the Extended Kalman Filter (EKF) algorithm. In order to apply the EKF an expression must be available...

Substitution and defect chemistry of La-Cu-O systems

International Nuclear Information System (INIS)

Gai, P.L.; McCarron, E.M.; Kunchur, M.

1991-01-01

In this paper substitutional effects of strontium in La-Cu-O system and defects accommodating stoichiometric deviations is investigated. The extended shear defects are analyzed using electron microscopy and the role in superconducting transport properties has been examined by magnetic measurements. The initial results suggest that the defects enhance flux pinning

Creation and annealing of metastable defect states in CH3NH3PbI3 at low temperatures

Science.gov (United States)

Lang, F.; Shargaieva, O.; Brus, V. V.; Rappich, J.; Nickel, N. H.

2018-02-01

Methylammonium lead iodide (CH3NH3PbI3), an organic-inorganic perovskite widely used for optoelectronic applications, is known to dissociate under illumination with light at photon energies around 2.7 eV and higher. Here, we show that photo-induced dissociation is not limited to ambient temperatures but can be observed even at 5 K. The photo-induced dissociation of N-H bonds results in the formation of metastable states. Photoluminescence (PL) measurements reveal the formation of defect states that are located 100 meV within the bandgap. This is accompanied by a quenching of the band-to-band PL by one order of magnitude. Defect generation is reversible and annealing at 30 K recovers the band-to-band PL, while the light-induced defect states disappear concurrently.

Correlation between impurities, defects and cell performance in semicrystalline silicon

International Nuclear Information System (INIS)

Doolittle, W.A.; Rohatgi, A.

1990-01-01

This paper reports that an in-depth analysis of Solarex CDS semicrystalline silicon has been performed and correlations between the efficiency and impurities, and defects present in the material have been made. Comparisons were made between cell performance and variations in interstitial oxygen, substitutional carbon, grain size, etch pit density, and trap location as a function of position in the ingot. The oxygen concentration was found to decrease with increasing distance from the bottom of the ingot while the carbon concentration as well as average grain size was found to increase. The best cell performance was obtained on wafers with minimum oxygen and maximum carbon (top). No correlation was found between etch pit density and cell performance. DLTS and JVT measurements revealed that samples with higher oxygen content (bottom) gave lower cell performance due to a large number of distributed states, possibly due to extended defects like oxygen precipitates. Low oxygen samples (top) showed predominately discrete states, improved cell performance and a doping dependent average trap density

Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications

International Nuclear Information System (INIS)

Zhang, Y.; Shao, Y. Y.; Lu, X. B.; Zeng, M.; Zhang, Z.; Gao, X. S.; Zhang, X. J.; Liu, J.-M.; Dai, J. Y.

2014-01-01

In this work, we present significant charge trapping memory effects of the metal-hafnium oxide-SiO 2 -Si (MHOS) structure. The devices based on 800 °C annealed HfO 2 film exhibit a large memory window of ∼5.1 V under ±10 V sweeping voltages and excellent charge retention properties with only small charge loss of ∼2.6% after more than 10 4  s retention. The outstanding memory characteristics are attributed to the high density of deep defect states in HfO 2 films. We investigated the defect states in the HfO 2 films by photoluminescence and photoluminescence excitation measurements and found that the defect states distributed in deep energy levels ranging from 1.1 eV to 2.9 eV below the conduction band. Our work provides further insights for the charge trapping mechanisms of the HfO 2 based MHOS devices.

Defect accumulation under cascade damage conditions

DEFF Research Database (Denmark)

Trinkaus, H.; Singh, B.N.; Woo, C.H.

1994-01-01

in terms of this reaction kinetics taking into account cluster production, dissociation, migration and annihilation at extended sinks. Microstructural features which are characteristic of cascade damage and cannot be explained in terms of the conventional single defect reaction kinetics are emphasized......There is now ample evidence from both experimental and computer simulation studies that in displacement cascades not only intense recombination takes place but also efficient clustering of both self-interstitial atoms (SIAs) and vacancies. The size distributions of the two types of defects produced...... reactions kinetics associated with the specific features of cascade damage is described, with emphasis on asymmetries between SIA and vacancy type defects concerning their production, stability, mobility and interactions with other defects. Defect accumulation under cascade damage conditions is discussed...

Classification of defects in honeycomb composite structure of helicopter rotor blades

International Nuclear Information System (INIS)

Balasko, M.; Svab, E.; Molnar, Gy.; Veres, I.

2005-01-01

The use of non-destructive testing methods to qualify the state of rotor blades with respect to their expected flight hours, with the aim to extend their lifetime without any risk of breakdown, is an important financial demand. In order to detect the possible defects in the composite structure of Mi-8 and Mi-24 type helicopter rotor blades used by the Hungarian Army, we have performed combined neutron- and X-ray radiography measurements at the Budapest Research Reactor. Several types of defects were detected, analysed and typified. Among the most frequent and important defects observed were cavities, holes and or cracks in the sealing elements on the interface of the honeycomb structure and the section boarders. Inhomogeneities of the resin materials (resin-rich or starved areas) at the core-honeycomb surfaces proved to be an other important point. Defects were detected at the adhesive filling, and water percolation was visualized at the sealing interfaces of the honeycomb sections. Corrosion effects, and metal inclusions have also been detected

Classification of defects in honeycomb composite structure of helicopter rotor blades

Science.gov (United States)

Balaskó, M.; Sváb, E.; Molnár, Gy.; Veres, I.

2005-04-01

The use of non-destructive testing methods to qualify the state of rotor blades with respect to their expected flight hours, with the aim to extend their lifetime without any risk of breakdown, is an important financial demand. In order to detect the possible defects in the composite structure of Mi-8 and Mi-24 type helicopter rotor blades used by the Hungarian Army, we have performed combined neutron- and X-ray radiography measurements at the Budapest Research Reactor. Several types of defects were detected, analysed and typified. Among the most frequent and important defects observed were cavities, holes and/or cracks in the sealing elements on the interface of the honeycomb structure and the section boarders. Inhomogeneities of the resin materials (resin-rich or starved areas) at the core-honeycomb surfaces proved to be an other important point. Defects were detected at the adhesive filling, and water percolation was visualized at the sealing interfaces of the honeycomb sections. Corrosion effects, and metal inclusions have also been detected.

Advances in defect characterizations of semiconductors using positrons

International Nuclear Information System (INIS)

Lynn, K.G.; Asoka-Kumar, P.

1996-01-01

Positron Annihilation Spectroscopy (PAS) is a sensitive probe for studying the electronic structure of defects in solids. The authors summarize recent developments in defect characterization of semiconductors using depth-resolved PAS. The progress achieved in extending the capabilities of the PAS method is also described

Effects of in-cascade defect clustering on near-term defect evolution

Energy Technology Data Exchange (ETDEWEB)

Heinisch, H.L. [Pacific Northwest National Lab., Richland, WA (United States)

1997-08-01

The effects of in-cascade defect clustering on the nature of the subsequent defect population are being studied using stochastic annealing simulations applied to cascades generated in molecular dynamics (MD) simulations. The results of the simulations illustrates the strong influence of the defect configuration existing in the primary damage state on subsequent defect evolution. The large differences in mobility and stability of vacancy and interstitial defects and the rapid one-dimensional diffusion of small, glissile interstitial loops produced directly in cascades have been shown to be significant factors affecting the evolution of the defect distribution. In recent work, the effects of initial cluster sizes appear to be extremely important.

Isolate extended state in the DNA molecular transistor with surface interaction

Energy Technology Data Exchange (ETDEWEB)

Wang, Le, E-mail: wang_le917@gs.zzu.edu.cn; Qin, Zhi-Jie

2016-02-01

The field effect characteristic of a DNA molecular device is investigated in a tight binding model with binary disorder and side site correlation. Using the transfer-matrix method and Landauer–Büttiker theory, we find that the system has isolated extended state that is irrespective of the DNA sequence and can be modulated by the gate voltage. When the gate voltage reaches some proper value, the isolated extended state appears at the Fermi level of the system and the long range charge transport is greatly enhanced. We attribute this phenomenon to the combination of the external field, the surface interaction, and the intrinsic disorder of DNA. The result is a generic feature of the nanowire with binary disorder and surface interaction.

Heterolytic dissociative adsorption state of dihydrogen favored by interfacial defects

Science.gov (United States)

Song, Zhenjun; Hu, Hanshi; Xu, Hu; Li, Yong; Cheng, Peng; Zhao, Bin

2018-03-01

The atomic-scale insight into dihydrogen on MgO(001) surface deposited on molybdenum substrate with interfacial defects was investigated in detail by employing density functional methods Here we report novel dissociative adsorption behaviors of single hydrogen molecule on the usually inert oxide surfaces, with consideration of two types of dissociation schemes. The heterolytic dissociation state -Mg(H)-O(H)- of dihydrogen is impossible to obtain on neighboring O-Mg sites of perfect bulk MgO(001) terraces. Unusually, the hydrogen molecule can form heterolytic fragmentation states on metal supported MgO(001) films with very low activation barrier (0.398 eV), and the heterolytic dissociation state is much more favorable than homolytic dissociation state both energetically and kinetically in all cases. Electronic properties and bonding attribution of adsorbates and the oxide-metal hybrid structure are revealed by analyzing density of states, differential charge densities, orbital interaction and electron localization function. The characteristic changes to the property and activity of magnesia (001) can have potential application in catalytic reactions.

Dual-probe spectroscopic fingerprints of defects in graphene

DEFF Research Database (Denmark)

Settnes, Mikkel; Power, Stephen; Petersen, Dirch Hjorth

2014-01-01

(e.g., an extended graphene sheet). Applying this method, we study the transport anisotropies in pristine graphene sheets, and analyze the spectroscopic fingerprints arising from quantum interference around single-site defects, such as vacancies and adatoms. Furthermore, we demonstrate that the dual......-probe setup is a useful tool for characterizing the electronic transport properties of extended defects or designed nanostructures. In particular, we show that nanoscale perforations, or antidots, in a graphene sheet display Fano-type resonances with a strong dependence on the edge geometry of the perforation....

Collection, use, and protection of population-based birth defects surveillance data in the united states.

Science.gov (United States)

Mai, Cara T; Law, David J; Mason, Craig A; McDowell, Bradley D; Meyer, Robert E; Musa, Debra

2007-12-01

Birth defects surveillance systems collect population-based birth defects data from multiple sources to track trends in prevalence, identify risk factors, refer affected families to services, and evaluate prevention efforts. Strong state and federal public health and legal mandates are in place to govern the collection and use of these data. Despite the prima facie appeal of "opt-in" and similar strategies to those who view data collection as a threat to privacy, the use of these strategies in lieu of population-based surveillance can severely limit the ability of public health agencies to accurately access the health status of a group within a defined geographical area. With the need for population-based data central to their mission, birth defects programs around the country take their data stewardship role seriously, recognizing both moral and legal obligations to protect the data by employing numerous safeguards. Birth defects surveillance systems are shaped by the needs of the community they are designed to serve, with the goal of preventing birth defects or alleviating the burdens associated with them. (c) 2007 Wiley-Liss, Inc.

Defects and the optical absorption in nanocrystalline ZnO

International Nuclear Information System (INIS)

Dutta, Sreetama; Chattopadhyay, Sanjay; Sutradhar, Manas; Sarkar, Anindya; Chakrabarti, Mahuya; Sanyal, Dirtha; Jana, Debnarayan

2007-01-01

The correlation between the structural and optical properties of mechanically milled high purity ZnO powder is reported in the present work. Reduction of average grain size and enhancement of strain as a result of milling have been estimated from the broadening of x-ray powder diffraction patterns. After milling, the optical bandgap, revealed from absorption spectroscopy, has been red-shifted and the width of the localized states, calculated from the analysis of the Urbach tail below the absorption edge, has been extended more and more into the bandgap. Moreover, the band tailing parameter is seen to vary exponentially with the inverse of the grain size. Finally, the positron annihilation technique has been employed to identify the nature of defects present (or generated due to milling) in the system and thereby to correlate the defect mediated modification of optical absorption in ZnO

Defects and the optical absorption in nanocrystalline ZnO

Energy Technology Data Exchange (ETDEWEB)

Dutta, Sreetama [Department of Physics, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata 700 009 (India); Chattopadhyay, Sanjay [Department of Physics, Taki Government College, Taki 743429 (India); Sutradhar, Manas [Department of Chemistry, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata 700 009 (India); Sarkar, Anindya [Department of Physics, Bangabasi Morning College, 19 Rajkumar Chakraborty Sarani, Kolkata 700 009 (India); Chakrabarti, Mahuya [Variable Energy Cyclotron Centre, 1/AF, Bidhannagar, Kolkata 700 064 (India); Sanyal, Dirtha [Variable Energy Cyclotron Centre, 1/AF, Bidhannagar, Kolkata 700 064 (India); Jana, Debnarayan [Department of Physics, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata 700 009 (India)

2007-06-13

The correlation between the structural and optical properties of mechanically milled high purity ZnO powder is reported in the present work. Reduction of average grain size and enhancement of strain as a result of milling have been estimated from the broadening of x-ray powder diffraction patterns. After milling, the optical bandgap, revealed from absorption spectroscopy, has been red-shifted and the width of the localized states, calculated from the analysis of the Urbach tail below the absorption edge, has been extended more and more into the bandgap. Moreover, the band tailing parameter is seen to vary exponentially with the inverse of the grain size. Finally, the positron annihilation technique has been employed to identify the nature of defects present (or generated due to milling) in the system and thereby to correlate the defect mediated modification of optical absorption in ZnO.

Vibration of carbon nanotubes with defects: order reduction methods

Science.gov (United States)

Hudson, Robert B.; Sinha, Alok

2018-03-01

Order reduction methods are widely used to reduce computational effort when calculating the impact of defects on the vibrational properties of nearly periodic structures in engineering applications, such as a gas-turbine bladed disc. However, despite obvious similarities these techniques have not yet been adapted for use in analysing atomic structures with inevitable defects. Two order reduction techniques, modal domain analysis and modified modal domain analysis, are successfully used in this paper to examine the changes in vibrational frequencies, mode shapes and mode localization caused by defects in carbon nanotubes. The defects considered are isotope defects and Stone-Wales defects, though the methods described can be extended to other defects.

State switching kinetics for quasi-one-dimensional nanosystems: Effects of Finite length and irradiation

Energy Technology Data Exchange (ETDEWEB)

Petukhov, B. V., E-mail: petukhov@ns.crys.ras.ru [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” (Russian Federation)

2017-01-15

The state switching in an extended quasi-one-dimensional material is modeled by the stochastic formation of local new-state nuclei and their subsequent growth along the system axis. An analytical approach is developed to describe the influence of defects, dividing a sample into an ensemble of finite-length segments, on its state switching kinetics. As applied to magnetic systems, the method makes it possible to calculate magnetization curves for different defect concentrations and parameters of material.

Defect-Tolerant Monolayer Transition Metal Dichalcogenides

DEFF Research Database (Denmark)

Pandey, Mohnish; Rasmussen, Filip Anselm; Kuhar, Korina

2016-01-01

Localized electronic states formed inside the band gap of a semiconductor due to crystal defects can be detrimental to the material's optoelectronic properties. Semiconductors with a lower tendency to form defect induced deep gap states are termed defect-tolerant. Here we provide a systematic first...... the gap. These ideas are made quantitative by introducing a descriptor that measures the degree of similarity of the conduction and valence band manifolds. Finally, the study is generalized to nonpolar nanoribbons of the TMDs where we find that only the defect sensitive materials form edge states within......-principles investigation of defect tolerance in 29 monolayer transition metal dichalcogenides (TMDs) of interest for nanoscale optoelectronics. We find that the TMDs based on group VI and X metals form deep gap states upon creation of a chalcogen (S, Se, Te) vacancy, while the TMDs based on group IV metals form only...

Feasibility of extending storage life of sheep-milk cheese using ionizing radiation

Energy Technology Data Exchange (ETDEWEB)

Krcal, Z; Prekoppova, J; Slottova, A [Vyskumny Ustav Mliekarensky, Zilina (Czechoslovakia)

1978-12-01

3 types of winter full-fat sheep cheese were /sup 60/Co gamma irradiated with doses of 75, 100, 200, and 500 krads, this 48 hours after production. Within a week-long storage the organoleptic properties of the cheeses were repeatedly evaluated. The irradiation was found to significantly reduce all microorganism groups. Doses above 100 krads were found to be unsuitable; cheese taste deteriorated and was defined as ''scorched, strange, impure''. Although during storage these defects disappear, the individual main components of proteins and lipids decompose due to enzyme activity, which results in a rapid deterioration of the product. The dose of 75 krads did not cause any taste defects and storage life was extended by four days as against the stated guarantee period.

Feasibility of extending storage life of sheep-milk cheese using ionizing radiation

International Nuclear Information System (INIS)

Krcal, Z.; Prekoppova, J.; Slottova, A.

1978-01-01

3 types of winter full-fat sheep cheese were 60 Co gamma irradiated with doses of 75, 100, 200, and 500 krads, this 48 hours after production. Within a week-long storage the organoleptic properties of the cheeses were repeatedly evaluated. The irradiation was found to significantly reduce all microorganism groups. Doses above 100 krads were found to be unsuitable; cheese taste deteriorated and was defined as ''scorched, strange, impure''. Although during storage these defects disappear, the individual main components of proteins and lipids decompose due to enzyme activity, which results in a rapid deterioration of the product. The dose of 75 krads did not cause any taste defects and storage life was extended by four days as against the stated guarantee period. (B.S.)

Convergence of Ground and Excited State Properties of Divacancy Defects in 4H-SiC with Computational Cell Size

Science.gov (United States)

2018-03-01

SiC with Computational Cell Size by Ariana Beste and DeCarlos E Taylor Approved for public release; distribution is unlimited...Laboratory Convergence of Ground and Excited State Properties of Divacancy Defects in 4H-SiC with Computational Cell Size by Ariana Beste...Ground and Excited State Properties of Divacancy Defects in 4H-SiC with Computational Cell Size 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM

Birth Defects in Newborns: Spina Bifida Index at Rio Grande Do Norte State in Brazil

Directory of Open Access Journals (Sweden)

Arnaldo CM Junior

2014-08-01

Conclusion: Northeast region is the one that has the major incidence of SB in Brazil country, but RN state has a number lower than others states from its region. It was made an update about therapeutic options to minimize the morbidity and mortality in newborn with SB congenital defects. [J Interdiscipl Histopathol 2014; 2(4.000: 217-223

Depth profiling of extended defects in silicon by Rutherford backscattering measurements

International Nuclear Information System (INIS)

Gruska, B.; Goetz, G.

1981-01-01

Depth profiling of dislocations and stacking faults is carried out by analyzing axial and planar channeling data from As + -and P + -implanted silicon samples annealed at high temperatures. The analyzing procedure is based on the simple two-beam model. The results show that depth profiling of dislocations using planar channeling data is connected with a broadening of the real distributions. A degradation of the defect concentration and a deformation of the profile result for very high defect concentrations (> 5 x 10 5 cm/cm 2 ). All these effects can be neglected by analyzing axial channeling data. Depth profiling of stacking faults is restricted to the determination of the depth distribution of displaced atomic rows or planes. For both the procedures, axial as well as planar channeling measurements, the same depth profiles of displaced atomic rows are obtained. (author)

Calculation of propellant gas pressure by simple extended corresponding state principle

Directory of Open Access Journals (Sweden)

Bin Xu

2016-04-01

Full Text Available The virial equation can well describe gas state at high temperature and pressure, but the difficulties in virial coefficient calculation limit the use of virial equation. Simple extended corresponding state principle (SE-CSP is introduced in virial equation. Based on a corresponding state equation, including three characteristic parameters, an extended parameter is introduced to describe the second virial coefficient expressions of main products of propellant gas. The modified SE-CSP second virial coefficient expression was extrapolated based on the virial coefficients experimental temperature, and the second virial coefficients obtained are in good agreement with the experimental data at a low temperature and the theoretical values at high temperature. The maximum pressure in the closed bomb test was calculated with modified SE-CSP virial coefficient expressions with the calculated error of less than 2%, and the error was smaller than the result calculated with the reported values under the same calculation conditions. The modified SE-CSP virial coefficient expression provides a convenient and efficient method for practical virial coefficient calculation without resorting to complicated molecular model design and integral calculation.

Nanoscale interfacial defect shedding in a growing nematic droplet.

Science.gov (United States)

Gurevich, Sebastian; Provatas, Nikolas; Rey, Alejandro

2017-08-01

Interfacial defect shedding is the most recent known mechanism for defect formation in a thermally driven isotropic-to-nematic phase transition. It manifests in nematic-isotropic interfaces going through an anchoring switch. Numerical computations in planar geometry established that a growing nematic droplet can undergo interfacial defect shedding, nucleating interfacial defect structures that shed into the bulk as +1/2 point defects. By extending the study of interfacial defect shedding in a growing nematic droplet to larger length and time scales, and to three dimensions, we unveil an oscillatory growth mode involving shape and anchoring transitions that results in a controllable regular distributions of point defects in planar geometry, and complex structures of disclination lines in three dimensions.

Destruction-polymerization transformations as a source of radiation-induced extended defects in chalcogenide glassy semiconductors

International Nuclear Information System (INIS)

Shpotyuk, Oleh; Filipecki, Jacek; Shpotyuk, Mykhaylo

2013-01-01

Long-wave shift of the optical transmission spectrum in the region of fundamental optical absorption edge is registered for As 2 S 3 chalcogenide glassy semiconductors after γ-irradiation. This effect is explained in the frameworks of the destruction-polymerization transformations concept by accepting the switching of the heteropolar As-S covalent bonds into homopolar As-As ones. It is assumed that (As 4 + ; S 1 - ) defect pairs are created under such switching. Formula to calculate content of the induced defects in chalcogenide glassy semiconductors is proposed. It is assumed that defects concentration depends on energy of broken covalent bond, bond-switching energy balance, correlation energy, optical band-gap and energy of excitation light. It is shown that theoretically calculated maximally possible content of radiation-induced defects in As 2 S 3 is about 1.6% while concentration of native defects is negligible. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Ion channeling study of defects in compound crystals using Monte Carlo simulations

Science.gov (United States)

Turos, A.; Jozwik, P.; Nowicki, L.; Sathish, N.

2014-08-01

Ion channeling is a well-established technique for determination of structural properties of crystalline materials. Defect depth profiles have been usually determined basing on the two-beam model developed by Bøgh (1968) [1]. As long as the main research interest was focused on single element crystals it was considered as sufficiently accurate. New challenge emerged with growing technological importance of compound single crystals and epitaxial heterostructures. Overlap of partial spectra due to different sublattices and formation of complicated defect structures makes the two beam method hardly applicable. The solution is provided by Monte Carlo computer simulations. Our paper reviews principal aspects of this approach and the recent developments in the McChasy simulation code. The latter made it possible to distinguish between randomly displaced atoms (RDA) and extended defects (dislocations, loops, etc.). Hence, complex defect structures can be characterized by the relative content of these two components. The next refinement of the code consists of detailed parameterization of dislocations and dislocation loops. Defect profiles for variety of compound crystals (GaN, ZnO, SrTiO3) have been measured and evaluated using the McChasy code. Damage accumulation curves for RDA and extended defects revealed non monotonous defect buildup with some characteristic steps. Transition to each stage is governed by the different driving force. As shown by the complementary high resolution XRD measurements lattice strain plays here the crucial role and can be correlated with the concentration of extended defects.

Detection of oxygen vacancy defect states in capacitors with ultrathin Ta2O5 films by zero-bias thermally stimulated current spectroscopy

International Nuclear Information System (INIS)

Lau, W.S.; Leong, L.L.; Han, Taejoon; Sandler, Nathan P.

2003-01-01

Defect state D (0.8 eV) was experimentally detected in Ta 2 O 5 capacitors with ultrathin (physical thickness 2 O 5 films using zero-bias thermally stimulated current spectroscopy and correlated with leakage current. Defect state D can be more efficiently suppressed by using N 2 O rapid thermal annealing (RTA) instead of using O 2 RTA for postdeposition annealing and by using TiN instead of Al for top electrode. We believe that defect D is probably the first ionization level of the oxygen vacancy deep double donor. Other important defects are Si/O-vacancy complex single donors and C/O-vacancy complex single donors

Extending solid state laser performance

Science.gov (United States)

Miesak, Ed

2017-02-01

Coherent Diode-Pumped Solid-State Orlando (CDO), formerly known as Lee Laser, headquartered in Orlando Florida produces CW and pulsed solid state lasers. Primary wavelengths include 1064 nm, 532 nm, and 355 nm. Other wavelengths produced include 1320 nm, 15xx nm, and 16xx nm. Pulse widths are in the range of singles to hundreds of nanoseconds. Average powers are in the range of a few watts to 1000 watts. Pulse repetition rates are typically in the range of 100 Hz to 100 KHz. Laser performance parameters are often modified according to customer requests. Laser parameters that can be adjusted include average power, pulse repetition rate, pulse length, beam quality, and wavelength. Laser parameters are typically cross-coupled such that adjusting one may change some or all of the others. Customers often request one or more parameters be changed without changing any of the remaining parameters. CDO has learned how to accomplish this successfully with rapid turn-around times and minimal cost impact. The experience gained by accommodating customer requests has produced a textbook of cause and effect combinations of laser components to accomplish almost any parameter change request. Understanding the relationships between component combinations provides valuable insight into lasing effects allowing designers to extend laser performance beyond what is currently available. This has led to several break through products, i.e. >150W average power 355 nm, >60W average power 6 ps 1064 nm, pulse lengths longer than 400 ns at 532 nm with average power >100W, >400W 532 nm with pulse lengths in the 100 ns range.

Extended defect related energy loss in CVD diamond revealed by spectrum imaging in a dedicated STEM

International Nuclear Information System (INIS)

Bangert, U.; Harvey, A.J.; Schreck, M.; Hoermann, F.

2005-01-01

This article aims at investigations of the low EEL region in the wide band gap system diamond. The advent of the UHV Enfina electron energy loss spectrometer combined with Digital Micrograph acquisition and processing software has made reliable detection of absorption losses below 10 eV possible. Incorporated into a dedicated STEM this instrumentation allows the acquisition of spectral information via spectrum maps (spectrum imaging) of sample areas hundreds of nanometers across, with nanometers pixel sizes, adequate spectrum statistics and 0.3 eV energy resolution, in direct correlation with microstructural features in the mapping area. We aim at discerning defect related losses at band gap energies, and discuss different routes to simultaneously process and analyse the spectra in a map. This involves extracting the zero loss peak from each spectrum and constructing ratio maps from the intensities in two energy windows, one defect related and one at a higher, crystal bandstructure dominated energy. This was applied to the residual spectrum maps and their first derivatives. Secondly, guided by theoretical EEL spectra calculations, the low loss spectra were fitted by a series of gaussian distributions. Pixel maps were constructed from amplitude ratios of gaussians, situated in the defect and the unaffected energy regime. The results demonstrate the existence of sp 2 -bonded carbon in the vicinity of stacking faults and partial dislocations in CVD diamond as well as additional states below conduction band, tailing deep into the band gap, at a node in a perfect dislocation. Calculated EEL spectra of shuffle dislocations give similar absorption features at 5-8 eV, and it is thought that this common feature is due to sp 2 -type bonding

Extended block diagram method for a multi-state system reliability assessment

International Nuclear Information System (INIS)

Lisnianski, Anatoly

2007-01-01

The presented method extends the classical reliability block diagram method to a repairable multi-state system. It is very suitable for engineering applications since the procedure is well formalized and based on the natural decomposition of the entire multi-state system (the system is represented as a collection of its elements). Until now, the classical block diagram method did not provide the reliability assessment for the repairable multi-state system. The straightforward stochastic process methods are very difficult for engineering application in such cases due to the 'dimension damnation'-huge number of system states. The suggested method is based on the combined random processes and the universal generating function technique and drastically reduces the number of states in the multi-state model

Momentum conserving defects in affine Toda field theories

Energy Technology Data Exchange (ETDEWEB)

Bristow, Rebecca; Bowcock, Peter [Department of Mathematical Sciences, Durham University,Durham, DH1 3LE (United Kingdom)

2017-05-30

Type II integrable defects with more than one degree of freedom at the defect are investigated. A condition on the form of the Lagrangian for such defects is found which ensures the existence of a conserved momentum in the presence of the defect. In addition it is shown that for any Lagrangian satisfying this condition, the defect equations of motion, when taken to hold everywhere, can be extended to give a Bäcklund transformation between the bulk theories on either side of the defect. This strongly suggests that such systems are integrable. Momentum conserving defects and Bäcklund transformations for affine Toda field theories based on the A{sub n}, B{sub n}, C{sub n} and D{sub n} series of Lie algebras are found. The defect associated with the D{sub 4} affine Toda field theory is examined in more detail. In particular classical time delays for solitons passing through the defect are calculated.

An Evaluation of Industrial Facilities Defects in Selected Industrial Estates in Lagos State, Nigeria

Directory of Open Access Journals (Sweden)

Oseghale, G.E.

2014-01-01

Full Text Available The study appraised the state of industrial facilities in selected industrial estates established between 1957 and 1981 in Lagos State by examining the nature and causes of facilities’ defects in the selected industrial estates. The buildings sampled were load bearing sandcrete block wall (1%, concrete framed structure (83% and steel framed structure (16%. Data were sourced using structured questionnaire administered on the staff of maintenance department of 35 building materials and plastic manufacturing industries purposively selected and located in 18 industrial estates. Data obtained were analyzed using descriptive statistic. The study found the structural elements of the buildings, i.e. foundations, beams, walls, and floors satisfactory. Using the mean response analysis, the result showed that the most severe factors responsible for industrial facilities’ defects were combined effects of geo-climatic factors (2.35, combined effects of biological agencies (2.15, corrosion (1.98, and physical aggression on the facilities (1.71.

Extended state observer-based motion synchronisation control for hybrid actuation system of large civil aircraft

Science.gov (United States)

Wang, Xingjian; Shi, Cun; Wang, Shaoping

2017-07-01

Hybrid actuation system with dissimilar redundant actuators, which is composed of a hydraulic actuator (HA) and an electro-hydrostatic actuator (EHA), has been applied on modern civil aircraft to improve the reliability. However, the force fighting problem arises due to different dynamic performances between HA and EHA. This paper proposes an extended state observer (ESO)-based motion synchronisation control method. To cope with the problem of unavailability of the state signals, the well-designed ESO is utilised to observe the HA and EHA state variables which are unmeasured. In particular, the extended state of ESO can estimate the lumped effect of the unknown external disturbances acting on the control surface, the nonlinear dynamics, uncertainties, and the coupling term between HA and EHA. Based on the observed states of ESO, motion synchronisation controllers are presented to make HA and EHA to simultaneously track the desired motion trajectories, which are generated by a trajectory generator. Additionally, the unknown disturbances and the coupling terms can be compensated by using the extended state of the proposed ESO. Finally, comparative simulation results indicate that the proposed ESO-based motion synchronisation controller can achieve great force fighting reduction between HA and EHA.

Effect of point defects on the electronic density states of SnC nanosheets: First-principles calculations

Directory of Open Access Journals (Sweden)

Soleyman Majidi

Full Text Available In this work, we investigated the electronic and structural properties of various defects including single Sn and C vacancies, double vacancy of the Sn and C atoms, anti-sites, position exchange and the Stone–Wales (SW defects in SnC nanosheets by using density-functional theory (DFT. We found that various vacancy defects in the SnC monolayer can change the electronic and structural properties. Our results show that the SnC is an indirect band gap compound, with the band gap of 2.10 eV. The system turns into metal for both structure of the single Sn and C vacancies. However, for the double vacancy contained Sn and C atoms, the structure remains semiconductor with the direct band gap of 0.37 eV at the G point. We also found that for anti-site defects, the structure remains semiconductor and for the exchange defect, the structure becomes indirect semiconductor with the K-G point and the band gap of 0.74 eV. Finally, the structure of SW defect remains semiconductor with the direct band gap at K point with band gap of 0.54 eV. Keywords: SnC nanosheets, Density-functional theory, First-principles calculations, Electronic density of states, Band gap

Generalized global symmetries in states with dynamical defects: The case of the transverse sound in field theory and holography

Science.gov (United States)

Grozdanov, Sašo; Poovuttikul, Napat

2018-05-01

In this work, we show how states with conserved numbers of dynamical defects (strings, domain walls, etc.) can be understood as possessing generalized global symmetries even when the microscopic origins of these symmetries are unknown. Using this philosophy, we build an effective theory of a 2 +1 -dimensional fluid state with two perpendicular sets of immersed elastic line defects. When the number of defects is independently conserved in each set, then the state possesses two one-form symmetries. Normally, such viscoelastic states are described as fluids coupled to Goldstone bosons associated with spontaneous breaking of translational symmetry caused by the underlying microscopic structure—the principle feature of which is a transverse sound mode. At the linear, nondissipative level, we verify that our theory, based entirely on symmetry principles, is equivalent to a viscoelastic theory. We then build a simple holographic dual of such a state containing dynamical gravity and two two-form gauge fields, and use it to study its hydrodynamic and higher-energy spectral properties characterized by nonhydrodynamic, gapped modes. Based on the holographic analysis of transverse two-point functions, we study consistency between low-energy predictions of the bulk theory and the effective boundary theory. Various new features of the holographic dictionary are explained in theories with higher-form symmetries, such as the mixed-boundary-condition modification of the quasinormal mode prescription that depends on the running coupling of the boundary double-trace deformations. Furthermore, we examine details of low- and high-energy parts of the spectrum that depend on temperature, line defect densities and the renormalization group scale.

Finding possible transition states of defects in silicon-carbide and alpha-iron using the dimer method

CERN Document Server

Gao Fei; Weber, W J; Corrales, L R; Jonsson, H

2003-01-01

Energetic primary recoil atoms from ion implantation or fast neutron irradiation produce isolated point defects and clusters of both vacancies and interstitials. The migration energies and mechanisms for these defects are crucial to successful multiscale modeling of microstructural evolution during ion-implantation, thermal annealing, or under irradiation over long periods of time. The dimer method is employed to search for possible transition states of interstitials and small interstitial clusters in SiC and alpha-Fe. The method uses only the first derivatives of the potential energy to find saddle points without knowledge of the final state of the transition. In SiC, the possible migration pathway for the C interstitial is found to consist of the first neighbor jump via a Si site or second neighbor jump, but the relative probability for the second neighbor jump is very low. In alpha-Fe, the possible transition states are studied as a function of interstitial cluster size, and the lowest energy barriers corr...

Modeling of Powder Bed Manufacturing Defects

Science.gov (United States)

Mindt, H.-W.; Desmaison, O.; Megahed, M.; Peralta, A.; Neumann, J.

2018-01-01

Powder bed additive manufacturing offers unmatched capabilities. The deposition resolution achieved is extremely high enabling the production of innovative functional products and materials. Achieving the desired final quality is, however, hampered by many potential defects that have to be managed in due course of the manufacturing process. Defects observed in products manufactured via powder bed fusion have been studied experimentally. In this effort we have relied on experiments reported in the literature and—when experimental data were not sufficient—we have performed additional experiments providing an extended foundation for defect analysis. There is large interest in reducing the effort and cost of additive manufacturing process qualification and certification using integrated computational material engineering. A prerequisite is, however, that numerical methods can indeed capture defects. A multiscale multiphysics platform is developed and applied to predict and explain the origin of several defects that have been observed experimentally during laser-based powder bed fusion processes. The models utilized are briefly introduced. The ability of the models to capture the observed defects is verified. The root cause of the defects is explained by analyzing the numerical results thus confirming the ability of numerical methods to provide a foundation for rapid process qualification.

Band gap and defect states of MgO thin films investigated using reflection electron energy loss spectroscopy

Directory of Open Access Journals (Sweden)

Sung Heo

2015-07-01

Full Text Available The band gap and defect states of MgO thin films were investigated by using reflection electron energy loss spectroscopy (REELS and high-energy resolution REELS (HR-REELS. HR-REELS with a primary electron energy of 0.3 keV revealed that the surface F center (FS energy was located at approximately 4.2 eV above the valence band maximum (VBM and the surface band gap width (EgS was approximately 6.3 eV. The bulk F center (FB energy was located approximately 4.9 eV above the VBM and the bulk band gap width was about 7.8 eV, when measured by REELS with 3 keV primary electrons. From a first-principles calculation, we confirmed that the 4.2 eV and 4.9 eV peaks were FS and FB, induced by oxygen vacancies. We also experimentally demonstrated that the HR-REELS peak height increases with increasing number of oxygen vacancies. Finally, we calculated the secondary electron emission yields (γ for various noble gases. He and Ne were not influenced by the defect states owing to their higher ionization energies, but Ar, Kr, and Xe exhibited a stronger dependence on the defect states owing to their small ionization energies.

Silicon exfoliation by hydrogen implantation: Actual nature of precursor defects

Energy Technology Data Exchange (ETDEWEB)

Kuisseu, Pauline Sylvia Pokam, E-mail: pauline-sylvia.pokam-kuisseu@cnrs-orleans.fr [CEMHTI-CNRS, 3A, rue de la férollerie, 45071 Orléans (France); Pingault, Timothée; Ntsoenzok, Esidor [CEMHTI-CNRS, 3A, rue de la férollerie, 45071 Orléans (France); Regula, Gabrielle [IM2NP-CNRS-Université d’Aix-Marseille, Avenue Escadrille Normandie Niemen, 13397 Marseille (France); Mazen, Frédéric [CEA-Leti, MINATEC campus, 17, rue des Martyrs, 38054 Grenoble Cedex 9 (France); Sauldubois, Audrey [Université d’Orléans, rue de Chartres – Collegium ST, 45067 Orléans (France); Andreazza, Caroline [ICMN-CNRS-Université d’Orléans, 1b rue de la férollerie, 45071 Orléans (France)

2017-06-15

MeV energy hydrogen implantation in silicon followed by a thermal annealing is a very smart way to produce high crystalline quality silicon substrates, much thinner than what can be obtained by diamond disk or wire sawing. Using this kerf-less approach, ultra-thin substrates with thicknesses between 15 µm and 100 µm, compatible with microelectronic and photovoltaic applications are reported. But, despite the benefits of this approach, there is still a lack of fundamental studies at this implantation energy range. However, if very few papers have addressed the MeV energy range, a lot of works have been carried out in the keV implantation energy range, which is the one used in the smart-cut® technology. In order to check if the nature and the growth mechanism of extended defects reported in the widely studied keV implantation energy range could be extrapolated in the MeV range, the thermal evolution of extended defects formed after MeV hydrogen implantation in (100) Si was investigated in this study. Samples were implanted at 1 MeV with different fluences ranging from 6 × 10{sup 16} H/cm{sup 2} to 2 × 10{sup 17} H/cm{sup 2} and annealed at temperatures up to 873 K. By cross-section transmission electron microscopy, we found that the nature of extended defects in the MeV range is quite different of what is observed in the keV range. In fact, in our implantation conditions, the generated extended defects are some kinds of planar clusters of gas-filled lenses, instead of platelets as commonly reported in the keV energy range. This result underlines that hydrogen behaves differently when it is introduced in silicon at high or low implantation energy. The activation energy of the growth of these extended defects is independent of the chosen fluence and is between (0.5–0.6) eV, which is very close to the activation energy reported for atomic hydrogen diffusion in a perfect silicon crystal.

Recombination via point defects and their complexes in solar silicon

Energy Technology Data Exchange (ETDEWEB)

Peaker, A.R.; Markevich, V.P.; Hamilton, B. [Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Parada, G.; Dudas, A.; Pap, A. [Semilab, 2 Prielle Kornelia Str, 1117 Budapest (Hungary); Don, E. [Semimetrics, PO Box 36, Kings Langley, Herts WD4 9WB (United Kingdom); Lim, B.; Schmidt, J. [Institute for Solar Energy Research (ISFH) Hamlen, 31860 Emmerthal (Germany); Yu, L.; Yoon, Y.; Rozgonyi, G. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907 (United States)

2012-10-15

Electronic grade Czochralski and float zone silicon in the as grown state have a very low concentration of recombination generation centers (typically <10{sup 10} cm{sup -3}). Consequently, in integrated circuit technologies using such material, electrically active inadvertent impurities and structural defects are rarely detectable. The quest for cheap photovoltaic cells has led to the use of less pure silicon, multi-crystalline material, and low cost processing for solar applications. Cells made in this way have significant extrinsic recombination mechanisms. In this paper we review recombination involving defects and impurities in single crystal and in multi-crystalline solar silicon. Our main techniques for this work are recombination lifetime mapping measurements using microwave detected photoconductivity decay and variants of deep level transient spectroscopy (DLTS). In particular, we use Laplace DLTS to distinguish between isolated point defects, small precipitate complexes and decorated extended defects. We compare the behavior of some common metallic contaminants in solar silicon in relation to their effect on carrier lifetime and cell efficiency. Finally, we consider the role of hydrogen passivation in relation to transition metal contaminants, grain boundaries and dislocations. We conclude that recombination via point defects can be significant but in most multi-crystalline material the dominant recombination path is via decorated dislocation clusters within grains with little contribution to the overall recombination from grain boundaries. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Low-lying Photoexcited States of a One-Dimensional Ionic Extended Hubbard Model

Science.gov (United States)

Yokoi, Kota; Maeshima, Nobuya; Hino, Ken-ichi

2017-10-01

We investigate the properties of low-lying photoexcited states of a one-dimensional (1D) ionic extended Hubbard model at half-filling. Numerical analysis by using the full and Lanczos diagonalization methods shows that, in the ionic phase, there exist low-lying photoexcited states below the charge transfer gap. As a result of comparison with numerical data for the 1D antiferromagnetic (AF) Heisenberg model, it was found that, for a small alternating potential Δ, these low-lying photoexcited states are spin excitations, which is consistent with a previous analytical study [Katsura et al., link ext-link-type="uri" xlink:href="https://doi.org/10.1103/PhysRevLett.103.177402" xlink:type="simple">Phys. Rev. Lett. 103, 177402 (2009)link>]. As Δ increases, the spectral intensity of the 1D ionic extended Hubbard model rapidly deviates from that of the 1D AF Heisenberg model and it is clarified that this deviation is due to the neutral-ionic domain wall, an elementary excitation near the neutral-ionic transition point.

Baryon states with hidden charm in the extended local hidden gauge approach

International Nuclear Information System (INIS)

Uchino, T.; Oset, E.; Liang, Wei-Hong

2016-01-01

The s-wave interaction of anti DΛ c , anti DΣ c , anti D * Λ c , anti D * Σ c and anti DΣ c * , anti D * Σ c * , is studied within a unitary coupled channels scheme with the extended local hidden gauge approach. In addition to the Weinberg-Tomozawa term, several additional diagrams via the pion exchange are also taken into account as box potentials. Furthermore, in order to implement the full coupled channels calculation, some of the box potentials which mix the vector-baryon and pseudoscalar-baryon sectors are extended to construct the effective transition potentials. As a result, we have observed six possible states in several angular momenta. Four of them correspond to two pairs of admixture states, two of anti DΣ c - anti D * Σ c with J = 1/2, and two of anti DΣ c * - anti D * Σ c * with J = 3/2. Moreover, we find a anti D * Σ c resonance which couples to the anti DΛ c channel and one spin degenerated bound state of anti D * Σ c * with J = 1/2,5/2. (orig.)

Charged Semiconductor Defects Structure, Thermodynamics and Diffusion

CERN Document Server

Seebauer, Edmund G

2009-01-01

The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect engineering." For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. Charged Semiconductor Defects details the current state of knowledge regarding the properties of the ionized defects that can affect the behavior of advanced transistors, photo-active devices, catalysts, and sensors. Features: Group IV, III-V, and oxide semiconductors; Intrinsic and extrinsic defects; and, P...

Defect states in hexagonal boron nitride: Assignments of observed properties and prediction of properties relevant to quantum computation

Science.gov (United States)

Sajid, A.; Reimers, Jeffrey R.; Ford, Michael J.

2018-02-01

Key properties of nine possible defect sites in hexagonal boron nitride (h-BN), VN,VN -1,CN,VNO2 B,VNNB,VNCB,VBCN,VBCNS iN , and VNCBS iB , are predicted using density-functional theory and are corrected by applying results from high-level ab initio calculations. Observed h-BN electron-paramagnetic resonance signals at 22.4, 20.83, and 352.70 MHz are assigned to VN,CN, and VNO2 B , respectively, while the observed photoemission at 1.95 eV is assigned to VNCB . Detailed consideration of the available excited states, allowed spin-orbit couplings, zero-field splitting, and optical transitions is made for the two related defects VNCB and VBCN . VNCB is proposed for realizing long-lived quantum memory in h-BN. VBCN is predicted to have a triplet ground state, implying that spin initialization by optical means is feasible and suitable optical excitations are identified, making this defect of interest for possible quantum-qubit operations.

Implications of defect clusters formed in cascades on free defect generation and microstructural development

International Nuclear Information System (INIS)

Wiedersich, H.

1992-12-01

A large fraction of the defects produced by irradiation with energetic neutrons or heavy ions originates in cascades. Not only increased recombination of vacancy and interstitial defects but also significant clustering of like defects occur. Both processes reduce the number of point defects available for long range migration. Consequences of defect clustering in cascades will be discussed in a semi-quantitative form with the aid of calculations using a very simplified model: Quasi-steady-state distributions of immobile vacancy and/or interstitial clusters develop which, in turn, can become significant sinks for mobile defects, and, therefore reduce their lifetime. Although cluster sinks will cause segregation and, potentially, precipitation of second phases due to local changes of composition, the finite lifetime of clusters will not lead to lasting, local compositional changes. A transition from highly dense interstitial and vacancy cluster distributions to the void swelling regime occurs when the thermal evaporation of vacancies from small vacancy clusters becomes significant at higher temperatures. Unequal clustering of vacancies and interstitials leads to an imbalance of their fluxes of in the matrix and, hence, to unequal contributions to atom transport by interstitials and by vacancies even in the quasi-steady state approximation

Quantum computing with defects.

Science.gov (United States)

Weber, J R; Koehl, W F; Varley, J B; Janotti, A; Buckley, B B; Van de Walle, C G; Awschalom, D D

2010-05-11

Identifying and designing physical systems for use as qubits, the basic units of quantum information, are critical steps in the development of a quantum computer. Among the possibilities in the solid state, a defect in diamond known as the nitrogen-vacancy (NV(-1)) center stands out for its robustness--its quantum state can be initialized, manipulated, and measured with high fidelity at room temperature. Here we describe how to systematically identify other deep center defects with similar quantum-mechanical properties. We present a list of physical criteria that these centers and their hosts should meet and explain how these requirements can be used in conjunction with electronic structure theory to intelligently sort through candidate defect systems. To illustrate these points in detail, we compare electronic structure calculations of the NV(-1) center in diamond with those of several deep centers in 4H silicon carbide (SiC). We then discuss the proposed criteria for similar defects in other tetrahedrally coordinated semiconductors.

Experimental study of defect power reactor fuel. Final report

International Nuclear Information System (INIS)

Forsyth, R.S.; Jonsson, T.

1982-01-01

Two BWR fuel rods, one intact and one defect, with the same manufacturing and irradiation data have been examined in a comparative study. The defect rod has been irradiated in a defect condition during approximately one reactor cycle and has consequently some secondary defects. The defect rod has two penetrating defects at a distance of about 1.5 meters from each other. Comparison with the intact rod shows a large Cs loss from the defect rod, especially between the cladding defects, where the loss is measured to about 30 %. The leachibility in deionized water is higher for Cs, U and Cm for fuel from the defect rod. The leaching results are more complex for Sr-90, Pu and Am. The fuel in the defect rod has undergone a change of structure with gain growth and formation of oriented fuel structure. The cladding of the defect rod is hydrided locally in some parts of the lower part of the rod and furthermore over a more extended region near the end of the rod. (Authors)

Topological hierarchy matters — topological matters with superlattices of defects

International Nuclear Information System (INIS)

He Jing; Kou Su-Peng

2016-01-01

Topological insulators/superconductors are new states of quantum matter with metallic edge/surface states. In this paper, we review the defects effect in these topological states and study new types of topological matters — topological hierarchy matters. We find that both topological defects (quantized vortices) and non topological defects (vacancies) can induce topological mid-gap states in the topological hierarchy matters after considering the superlattice of defects. These topological mid-gap states have nontrivial topological properties, including the nonzero Chern number and the gapless edge states. Effective tight-binding models are obtained to describe the topological mid-gap states in the topological hierarchy matters. (topical review)

Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy

International Nuclear Information System (INIS)

Lau, W.S.; Zhong, L.; Lee, A.; See, C.H.; Han, T.; Sandler, N.P.; Chong, T.C.

1997-01-01

Defect states responsible for leakage current in ultrathin (physical thickness 2 O 5 ) films were measured with a novel zero-bias thermally stimulated current technique. It was found that defect states A, whose activation energy was estimated to be about 0.2 eV, can be more efficiently suppressed by using N 2 O rapid thermal annealing (RTA) instead of using O 2 RTA for postdeposition annealing. The leakage current was also smaller for samples with N 2 O RTA than those with O 2 RTA for postdeposition annealing. Hence, defect states A are quite likely to be important in causing leakage current. copyright 1997 American Institute of Physics

Surface defects and chiral algebras

Energy Technology Data Exchange (ETDEWEB)

Córdova, Clay [School of Natural Sciences, Institute for Advanced Study,1 Einstein Dr, Princeton, NJ 08540 (United States); Gaiotto, Davide [Perimeter Institute for Theoretical Physics,31 Caroline St N, Waterloo, ON N2L 2Y5 (Canada); Shao, Shu-Heng [School of Natural Sciences, Institute for Advanced Study,1 Einstein Dr, Princeton, NJ 08540 (United States)

2017-05-26

We investigate superconformal surface defects in four-dimensional N=2 superconformal theories. Each such defect gives rise to a module of the associated chiral algebra and the surface defect Schur index is the character of this module. Various natural chiral algebra operations such as Drinfeld-Sokolov reduction and spectral flow can be interpreted as constructions involving four-dimensional surface defects. We compute the index of these defects in the free hypermultiplet theory and Argyres-Douglas theories, using both infrared techniques involving BPS states, as well as renormalization group flows onto Higgs branches. In each case we find perfect agreement with the predicted characters.

A Performance Comparison Between Extended Kalman Filter and Unscented Kalman Filter in Power System Dynamic State Estimation

DEFF Research Database (Denmark)

Khazraj, Hesam; Silva, Filipe Miguel Faria da; Bak, Claus Leth

2016-01-01

Dynamic State Estimation (DSE) is a critical tool for analysis, monitoring and planning of a power system. The concept of DSE involves designing state estimation with Extended Kalman Filter (EKF) or Unscented Kalman Filter (UKF) methods, which can be used by wide area monitoring to improve......-linear state estimator is developed in MatLab to solve states by applying the unscented Kalman filter (UKF) and Extended Kalman Filter (EKF) algorithm. Finally, a DSE model is built for a 14 bus power system network to evaluate the proposed algorithm for the networks.This article will focus on comparing...

Vortex pinning by point defect in superconductors

International Nuclear Information System (INIS)

Liao Hongyin; Zhou Shiping; Du Haochen

2003-01-01

We apply the periodic time-dependent Ginzburg-Landau model to study vortex distribution in type-II superconductors with a point-like defect and square pinning array. A defect site will pin vortices, and a periodic pinning array with right geometric parameters, which can be any form designed in advance, shapes the vortex pattern as external magnetic field varies. The maximum length over which an attractive interaction between a pinning centre and a vortex extends is estimated to be about 6.0ξ. We also derive spatial distribution expressions for the order parameter, vector potential, magnetic field and supercurrent induced by a point defect. Theoretical results and numerical simulations are compared with each other and they are consistent

Defects introduced by Ar plasma exposure in GaAs probed by monoenergetic positron beam

Energy Technology Data Exchange (ETDEWEB)

Uedono, Akira; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Kawano, Takao; Wada, Kazumi; Nakanishi, Hideo

1994-10-01

Ar-plasma-induced defects in n-type GaAs were probed by a monoenergetic positron beam. The depth distribution of the defects was obtained from measurements of Doppler broadening profiles of the annihilation radiation as a function of incident positron energy. The damaged layer induced by the exposure was found to extend far beyond the stopping range of Ar ions, and the dominant defects were identified as interstitial-type defects. After 100degC annealing, such defects were annealed. Instead, vacancy-type defects were found to be the dominant defects in the subsurface region. (author).

Fragmentation of Fast Josephson Vortices and Breakdown of Ordered States by Moving Topological Defects.

Science.gov (United States)

Sheikhzada, Ahmad; Gurevich, Alex

2015-12-07

Topological defects such as vortices, dislocations or domain walls define many important effects in superconductivity, superfluidity, magnetism, liquid crystals, and plasticity of solids. Here we address the breakdown of the topologically-protected stability of such defects driven by strong external forces. We focus on Josephson vortices that appear at planar weak links of suppressed superconductivity which have attracted much attention for electronic applications, new sources of THz radiation, and low-dissipative computing. Our numerical simulations show that a rapidly moving vortex driven by a constant current becomes unstable with respect to generation of vortex-antivortex pairs caused by Cherenkov radiation. As a result, vortices and antivortices become spatially separated and accumulate continuously on the opposite sides of an expanding dissipative domain. This effect is most pronounced in thin film edge Josephson junctions at low temperatures where a single vortex can switch the whole junction into a resistive state at currents well below the Josephson critical current. Our work gives a new insight into instability of a moving topological defect which destroys global long-range order in a way that is remarkably similar to the crack propagation in solids.

Optical transitions in two-dimensional topological insulators with point defects

Science.gov (United States)

Sablikov, Vladimir A.; Sukhanov, Aleksei A.

2016-12-01

Nontrivial properties of electronic states in topological insulators are inherent not only to the surface and boundary states, but to bound states localized at structure defects as well. We clarify how the unusual properties of the defect-induced bound states are manifested in optical absorption spectra in two-dimensional topological insulators. The calculations are carried out for defects with short-range potential. We find that the defects give rise to the appearance of specific features in the absorption spectrum, which are an inherent property of topological insulators. They have the form of two or three absorption peaks that are due to intracenter transitions between electron-like and hole-like bound states.

Spectroscopy and control of near-surface defects in conductive thin film ZnO

KAUST Repository

Kelly, Leah L; Racke, David A; Schulz, Philip; Li, Hong; Winget, Paul; Kim, Hyungchul; Ndione, Paul; Sigdel, Ajaya K; Bredas, Jean-Luc; Berry, Joseph J; Graham, Samuel; Monti, Oliver L A

2016-01-01

The electronic structure of inorganic semiconductor interfaces functionalized with extended π-conjugated organic molecules can be strongly influenced by localized gap states or point defects, often present at low concentrations and hard to identify spectroscopically. At the same time, in transparent conductive oxides such as ZnO, the presence of these gap states conveys the desirable high conductivity necessary for function as electron-selective interlayer or electron collection electrode in organic optoelectronic devices. Here, we report on the direct spectroscopic detection of a donor state within the band gap of highly conductive zinc oxide by two-photon photoemission spectroscopy. We show that adsorption of the prototypical organic acceptor C60 quenches this state by ground-state charge transfer, with immediate consequences on the interfacial energy level alignment. Comparison with computational results suggests the identity of the gap state as a near-surface-confined oxygen vacancy.

Spectroscopy and control of near-surface defects in conductive thin film ZnO

KAUST Repository

Kelly, Leah L

2016-02-12

The electronic structure of inorganic semiconductor interfaces functionalized with extended π-conjugated organic molecules can be strongly influenced by localized gap states or point defects, often present at low concentrations and hard to identify spectroscopically. At the same time, in transparent conductive oxides such as ZnO, the presence of these gap states conveys the desirable high conductivity necessary for function as electron-selective interlayer or electron collection electrode in organic optoelectronic devices. Here, we report on the direct spectroscopic detection of a donor state within the band gap of highly conductive zinc oxide by two-photon photoemission spectroscopy. We show that adsorption of the prototypical organic acceptor C60 quenches this state by ground-state charge transfer, with immediate consequences on the interfacial energy level alignment. Comparison with computational results suggests the identity of the gap state as a near-surface-confined oxygen vacancy.

Electronic structure of defects in semiconductor heterojunctions

International Nuclear Information System (INIS)

Haussy, Bernard; Ganghoffer, Jean Francois

2002-01-01

Full text.heterojunctions and semiconductors and superlattices are well known and well used by people interested in optoelectronics communications. Components based on the use of heterojunctions are interesting for confinement of light and increase of quantum efficiency. An heterojunction is the contact zone between two different semiconductors, for example GaAs and Ga 1-x Al x As. Superlattices are a succession of heterojunctions (up to 10 or 20). These systems have been the subjects of many experiments ao analyse the contact between semiconductors. They also have been theoretically studied by different types of approach. The main result of those studies is the prediciton of band discontinuities. Defects in heterojunctions are real traps for charge carriers; they can affect the efficiency of the component decreasing the currents and the fluxes in it. the knowledge of their electronic structure is important, a great density of defects deeply modifies the electronic structure of the whole material creating real new bands of energy in the band structure of the component. in the first part of this work, we will describe the heterostructure and the defect in terms of quantum wells and discrete levels. This approach allows us to show the role of the width of the quantum well describing the structure but induces specific behaviours due to the one dimensional modelling. Then a perturbative treatment is proposed using the Green's functions formalism. We build atomic chains with different types of atoms featuring the heterostructure and the defect. Densities of states of a structure with a defect and levels associated to the defect are obtained. Results are comparable with the free electrons work, but the modelling do not induce problems due to a one dimensional approach. To extend our modelling, a three dimensions approach, based on a cavity model, is investigated. The influence of the defect, - of hydrogenoid type - introduced in the structure, is described by a cavity

Positron annihilation spectroscopy in defects of semiconductors

International Nuclear Information System (INIS)

Fujinami, Masanori

2002-01-01

Interaction of positron and defects, application to research of defects of semiconductor and defects on the surface of semiconductor are explained. Cz (Czochralski)-Si single crystal with 10 18 cm -3 impurity oxygen was introduced defects by electron irradiation and the positron lifetime was measured at 90K after annealing. The defect size and recovery temperature were determined by the lifetime measurement. The distribution of defects in the depth direction is shown by S-E curve. The chemical state analysis is possible by CBS (Coincidence Doppler Broadening) spectra. The application to silicon-implanted (100 keV, 2x10 15 cm -2 ) silicon and oxygen-implanted (180 keV, 2x10 15 cm -2 ) silicon are stated. On the oxygen-implanted silicon, the main product was V2 after implantation, V 6 O 2 at 600degC and V 10 O 6 at 800degC. (S.Y.)

EBIC and LBIC studies of the properties of extended defects in plastically deformed silicon

Energy Technology Data Exchange (ETDEWEB)

Orlov, V. I.; Feklisova, O. V.; Yakimov, E. B., E-mail: yakimov@iptm.ru [Russian Academy of Sciences, Institute of Microelectronic Technology and Ultra-High-Purity Materials (Russian Federation)

2015-06-15

The results of comparative experimental studies of one- and two-dimensional defects in plastically deformed silicon by the electron-beam-induced current (EBIC) and light-beam-induced current (LBIC) techniques are reported. It is shown that the contrast of two-dimensional defects (dislocation trails) in the LBIC method can by much more pronounced than that in the EBIC technique, which is in good agreement with the results of calculations. The higher sensitivity of the LBIC technique is mainly due to deeper penetration of the optical beam into the material in comparison to the penetration of the electron beam of a scanning electron microscope.

Electronic states of zigzag graphene nanoribbons with edges reconstructed with topological defects

Energy Technology Data Exchange (ETDEWEB)

Pincak, R., E-mail: pincak@saske.sk [Institute of Experimental Physics, Slovak Academy of Sciences, Watsonova 47, 043 53 Kosice (Slovakia); Bogoliubov Laboratory of Theoretical Physics, Joint Institute for Nuclear Research, 141980 Dubna, Moscow Region (Russian Federation); Smotlacha, J., E-mail: smota@centrum.cz [Bogoliubov Laboratory of Theoretical Physics, Joint Institute for Nuclear Research, 141980 Dubna, Moscow Region (Russian Federation); Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University, Brehova 7, 110 00 Prague (Czech Republic); Osipov, V.A., E-mail: osipov@theor.jinr.ru [Bogoliubov Laboratory of Theoretical Physics, Joint Institute for Nuclear Research, 141980 Dubna, Moscow Region (Russian Federation)

2015-10-15

The energy spectrum and electronic density of states (DOS) of zigzag graphene nanoribbons with edges reconstructed with topological defects are investigated within the tight-binding method. In case of the Stone–Wales zz(57) edge the low-energy spectrum is markedly changed in comparison to the pristine zz edge. We found that the electronic DOS at the Fermi level is different from zero at any width of graphene nanoribbons. In contrast, for ribbons with heptagons only at one side and pentagons at another one the energy gap at the Fermi level is open and the DOS is equal to zero. The reason is the influence of uncompensated topological charges on the localized edge states, which are topological in nature. This behavior is similar to that found for the structured external electric potentials along the edges.

Direct Power Control for Three-Phase Two-Level Voltage-Source Rectifiers Based on Extended-State Observation

DEFF Research Database (Denmark)

Song, Zhanfeng; Tian, Yanjun; Yan, Zhuo

2016-01-01

This paper proposed a direct power control strategy for three-phase two-level voltage-source rectifiers based on extended-state observation. Active and reactive powers are directly regulated in the stationary reference frame. Similar to the family of predictive controllers whose inherent characte......This paper proposed a direct power control strategy for three-phase two-level voltage-source rectifiers based on extended-state observation. Active and reactive powers are directly regulated in the stationary reference frame. Similar to the family of predictive controllers whose inherent...

Baryon states with hidden charm in the extended local hidden gauge approach

Energy Technology Data Exchange (ETDEWEB)

Uchino, T.; Oset, E. [Centro Mixto Universidad de Valencia-CSIC, Institutos de Investigacion de Paterna, Departamento de Fisica Teorica y IFIC, Valencia (Spain); Liang, Wei-Hong [Guangxi Normal University, Department of Physics, Guilin (China)

2016-03-15

The s-wave interaction of anti DΛ{sub c}, anti DΣ{sub c}, anti D{sup *}Λ{sub c}, anti D{sup *}Σ{sub c} and anti DΣ{sub c}{sup *}, anti D{sup *}Σ{sub c}{sup *}, is studied within a unitary coupled channels scheme with the extended local hidden gauge approach. In addition to the Weinberg-Tomozawa term, several additional diagrams via the pion exchange are also taken into account as box potentials. Furthermore, in order to implement the full coupled channels calculation, some of the box potentials which mix the vector-baryon and pseudoscalar-baryon sectors are extended to construct the effective transition potentials. As a result, we have observed six possible states in several angular momenta. Four of them correspond to two pairs of admixture states, two of anti DΣ{sub c} - anti D{sup *}Σ{sub c} with J = 1/2, and two of anti DΣ{sub c}{sup *} - anti D{sup *}Σ{sub c}{sup *} with J = 3/2. Moreover, we find a anti D{sup *}Σ{sub c} resonance which couples to the anti DΛ{sub c} channel and one spin degenerated bound state of anti D{sup *}Σ{sub c}{sup *} with J = 1/2,5/2. (orig.)

Defective pyrite (100) surface: An ab initio study

International Nuclear Information System (INIS)

Stirling, Andras; Bernasconi, Marco; Parrinello, Michele

2007-01-01

The structural and electronic properties of sulfur monomeric defects at the FeS 2 (100) surface have been studied by periodic density-functional calculations. We have shown that for a monomeric sulfur bound to an originally fivefold coordinated surface Fe site, the defect core features a triplet electronic ground state with unpaired spins localized on the exposed Fe-S unit. At this site, the iron and sulfur ions have oxidation states +4 and -2, respectively. This defect can be seen as produced via heterolytic bond breaking of the S-S sulfur dimer followed by a Fe-S redox reaction. The calculated sulfur 2p core-level shifts of the monomeric defects are in good agreement with experimental photoemission spectra, which allow a compelling assignment of the different spectroscopic features. The effect of water on the stability of the defective surface has also been studied, and it has been shown that the triplet state is stable against the wetting of the surface. The most important implications of the presence of the monomeric sulfur defect on the reactivity are also discussed

[Health professionals facing hand hygiene improvement: state-of-the-art strategies versus extended strategies].

Science.gov (United States)

Herrera-Usagre, Manuel; Pérez-Pérez, Pastora; Vázquez-Vázquez, Marta; Santana-López, Vicente

2014-10-01

The hand hygiene (HH) is one of the preventive practices more .widely and effectively implemented in the control of healthcare associated infections. However, there are several barriers to compliance. To assess which strategy, state-of-the-art strategies (availability of alcohol-based preparations, posters, instructions and training) or extended strategies (feedbacks, formal and informal leadership), are seen as more effective to improve hand hygiene (HH) compliance. Analytical study using a self-completed questionnaire developed by the World Health Organization. 2,068 questionnaires, completed by healthcare professionals (HP) in Andalusia (Spain), were received from 2010 to 2012. Analytical technique: Structural equation modeling and multi group measurement invariance. Once the reliability of the proposed constructs was achieved (Cronbach α=0.73, 0.84, 0.70), it was found that those HP working in centers with the highest level of commitment with HH are those who see extended strategies as more effective (χ2=298.3, df=39, CFI=0.972, TLI=0.961, RMSEA=0.057, SRMR=0.028). Our results have shown that hospitals' HP, compared to primary care HP, see state-of-the-art strategies as more effective, as well as they give less importance to HH, meanwhile nurses, compared to physicians, see effective both strategies. HP contemplate the combination of state-of-the-art and extended strategies as an effective way to improve the HH compliance. In addition, extended strategies are considered more effective amongst the most "advanced" healthcare settings in terms of their commitment to HH. The results highlight the need for commitment at management, collective and individual level in order to maintain patient safety.

High resolution deep level transient spectroscopy and process-induced defects in silicon

International Nuclear Information System (INIS)

Evans-Freeman, J.H.; Emiroglu, D.; Vernon-Parry, K.D.

2004-01-01

High resolution, or Laplace, deep level transient spectroscopy (LDLTS) enables the identification of very closely spaced energetic levels in a semiconductor bandgap. DLTS may resolve peaks with a separation of tens of electron volts, but LDLTS can resolve defect energy separations as low as a few MeV. In this paper, we present results from LDLTS applied to ion implantation-induced defects in silicon, with particular emphasis on characterisation of end-of-range interstitial type defects. Silicon was implanted with a variety of ions from mass 28 to 166. A combination of LDLTS and direct capture cross-section measurements was employed to show that electrically active small extended defects were present in the as-implanted samples. Larger dislocations were then generated in Si by oxygenation to act as a control sample. These stacking faults had typical lengths of microns, and their electrical activity was subsequently characterised by LDLTS. This was to establish the sensitivity of LDLTS to defects whose carrier capture is characterised by a non-exponential filling process and an evolving band structure as carrier capture proceeds. The LDLTS spectra show several components in capacitance transients originating from both the end-of-range defects, and the stacking faults, and also clearly show that the carrier emission rates reduce as these extended defects fill with carriers. The end-of-range defects and the stacking faults are shown to have the same electrical behaviour

Extended defects in epitaxial Sc2O3 films grown on (111) Si

International Nuclear Information System (INIS)

Klenov, Dmitri O.; Edge, Lisa F.; Schlom, Darrell G.; Stemmer, Susanne

2005-01-01

Epitaxial Sc 2 O 3 films with the cubic bixbyite structure were grown on (111) Si by reactive molecular beam epitaxy. High-resolution transmission electron microscopy (HRTEM) revealed an abrupt, reaction-layer free interface between Sc 2 O 3 and Si. The ∼10% lattice mismatch between Si and Sc 2 O 3 was relieved by the formation of a hexagonal misfit dislocation network with Burgers vectors of 1/2 Si and line directions parallel to Si . A high density of planar defects and threading dislocations was observed. Analysis of lattice shifts across the planar defects in HRTEM showed that these faults were likely antiphase boundaries (APBs). ABPs form when film islands coalesce during growth because films nucleate with no unique arrangement of the ordered oxygen vacancies in the bixbyite structure relative to the Si lattice

Defect reduction of patterned media templates and disks

Science.gov (United States)

Luo, Kang; Ha, Steven; Fretwell, John; Ramos, Rick; Ye, Zhengmao; Schmid, Gerard; LaBrake, Dwayne; Resnick, Douglas J.; Sreenivasan, S. V.

2010-05-01

Imprint lithography has been shown to be an effective technique for the replication of nano-scale features. Acceptance of imprint lithography for manufacturing will require a demonstration of defect levels commensurate with cost-effective device production. This work summarizes the results of defect inspections of hard disks patterned using Jet and Flash Imprint Lithography (J-FILTM). Inspections were performed with optical based automated inspection tools. For the hard drive market, it is important to understand the defectivity of both the template and the imprinted disk. This work presents a methodology for automated pattern inspection and defect classification for imprint-patterned media. Candela CS20 and 6120 tools from KLA-Tencor map the optical properties of the disk surface, producing highresolution grayscale images of surface reflectivity and scattered light. Defects that have been identified in this manner are further characterized according to the morphology. The imprint process was tested after optimizing both the disk cleaning and adhesion layers processes that precede imprinting. An extended imprint run was performed and both the defect types and trends are reported.

Dark matter from cosmic defects on galactic scales?

International Nuclear Information System (INIS)

Guerreiro, N.; Carvalho, J. P. M. de; Avelino, P. P.; Martins, C. J. A. P.

2008-01-01

We discuss the possible dynamical role of extended cosmic defects on galactic scales, specifically focusing on the possibility that they may provide the dark matter suggested by the classical problem of galactic rotation curves. We emphasize that the more standard defects (such as Goto-Nambu strings) are unsuitable for this task but show that more general models (such as transonic wiggly strings) could in principle have a better chance. In any case, we show that observational data severely restricts any such scenarios.

Extended superposed quantum-state initialization using disjoint prime implicants

International Nuclear Information System (INIS)

Rosenbaum, David; Perkowski, Marek

2009-01-01

Extended superposed quantum-state initialization using disjoint prime implicants is an algorithm for generating quantum arrays for the purpose of initializing a desired quantum superposition. The quantum arrays generated by this algorithm almost always use fewer gates than other algorithms and in the worst case use the same number of gates. These improvements are achieved by allowing certain parts of the quantum superposition that cannot be initialized directly by the algorithm to be initialized using special circuits. This allows more terms in the quantum superposition to be initialized at the same time which decreases the number of gates required by the generated quantum array.

ILT based defect simulation of inspection images accurately predicts mask defect printability on wafer

Science.gov (United States)

Deep, Prakash; Paninjath, Sankaranarayanan; Pereira, Mark; Buck, Peter

2016-05-01

printability of defects at wafer level and automates the process of defect dispositioning from images captured using high resolution inspection machine. It first eliminates false defects due to registration, focus errors, image capture errors and random noise caused during inspection. For the remaining real defects, actual mask-like contours are generated using the Calibre® ILT solution [1][2], which is enhanced to predict the actual mask contours from high resolution defect images. It enables accurate prediction of defect contours, which is not possible from images captured using inspection machine because some information is already lost due to optical effects. Calibre's simulation engine is used to generate images at wafer level using scanner optical conditions and mask-like contours as input. The tool then analyses simulated images and predicts defect printability. It automatically calculates maximum CD variation and decides which defects are severe to affect patterns on wafer. In this paper, we assess the printability of defects for the mask of advanced technology nodes. In particular, we will compare the recovered mask contours with contours extracted from SEM image of the mask and compare simulation results with AIMSTM for a variety of defects and patterns. The results of printability assessment and the accuracy of comparison are presented in this paper. We also suggest how this method can be extended to predict printability of defects identified on EUV photomasks.

Global control of reaction wheel pendulum through energy regulation and extended linearization of the state variables

Directory of Open Access Journals (Sweden)

Oscar D. Montoya-Giraldo

2014-01-01

Full Text Available This paper presents the design and simulation of a global controller for the Reaction Wheel Pendulum system using energy regulation and extended linearization methods for the state feedback. The proposed energy regulation is based on the gradual reduction of the energy of the system to reach the unstable equilibrium point. The signal input for this task is obtained from the Lyapunov stability theory. The extended state feedback controller design is used to get a smooth nonlinear function that extends the region of operation to a bigger range, in contrast with the static linear state feedback obtained through the method of approximate linearization around an operating point. The general designed controller operates with a switching between the two control signals depending upon the region of operation; perturbations are applied in the control signal and the (simulated measured variables to verify the robustness and efficiency of the controller. Finally, simulations and tests using the model of the reaction wheel pendulum system, allow to observe the versatility and functionality of the proposed controller in the entire operation region of the pendulum.

Polydispersity-driven topological defects as order-restoring excitations.

Science.gov (United States)

Yao, Zhenwei; Olvera de la Cruz, Monica

2014-04-08

The engineering of defects in crystalline matter has been extensively exploited to modify the mechanical and electrical properties of many materials. Recent experiments on manipulating extended defects in graphene, for example, show that defects direct the flow of electric charges. The fascinating possibilities offered by defects in two dimensions, known as topological defects, to control material properties provide great motivation to perform fundamental investigations to uncover their role in various systems. Previous studies mostly focus on topological defects in 2D crystals on curved surfaces. On flat geometries, topological defects can be introduced via density inhomogeneities. We investigate here topological defects due to size polydispersity on flat surfaces. Size polydispersity is usually an inevitable feature of a large variety of systems. In this work, simulations show well-organized induced topological defects around an impurity particle of a wrong size. These patterns are not found in systems of identical particles. Our work demonstrates that in polydispersed systems topological defects play the role of restoring order. The simulations show a perfect hexagonal lattice beyond a small defective region around the impurity particle. Elasticity theory has demonstrated an analogy between the elementary topological defects named disclinations to electric charges by associating a charge to a disclination, whose sign depends on the number of its nearest neighbors. Size polydispersity is shown numerically here to be an essential ingredient to understand short-range attractions between like-charge disclinations. Our study suggests that size polydispersity has a promising potential to engineer defects in various systems including nanoparticles and colloidal crystals.

Intrinsic Defects and H Doping in WO3

KAUST Repository

Zhu, Jiajie; Vasilopoulou, Maria; Davazoglou, Dimitris; Kennou, Stella; Chroneos, Alexander; Schwingenschlö gl, Udo

2017-01-01

WO3 is widely used as industrial catalyst. Intrinsic and/or extrinsic defects can tune the electronic properties and extend applications to gas sensors and optoelectonics. However, H doping is a challenge to WO3, the relevant mechanisms being hardly

Defects at oxide surfaces

CERN Document Server

Thornton, Geoff

2015-01-01

This book presents the basics and characterization of defects at oxide surfaces. It provides a state-of-the-art review of the field, containing information to the various types of surface defects, describes analytical methods to study defects, their chemical activity and the catalytic reactivity of oxides. Numerical simulations of defective structures complete the picture developed. Defects on planar surfaces form the focus of much of the book, although the investigation of powder samples also form an important part. The experimental study of planar surfaces opens the possibility of applying the large armoury of techniques that have been developed over the last half-century to study surfaces in ultra-high vacuum. This enables the acquisition of atomic level data under well-controlled conditions, providing a stringent test of theoretical methods. The latter can then be more reliably applied to systems such as nanoparticles for which accurate methods of characterization of structure and electronic properties ha...

Positron annihilation spectroscopy in defects of semiconductors

CERN Document Server

Fujinami, M

2002-01-01

Interaction of positron and defects, application to research of defects of semiconductor and defects on the surface of semiconductor are explained. Cz (Czochralski)-Si single crystal with 10 sup 1 sup 8 cm sup - sup 3 impurity oxygen was introduced defects by electron irradiation and the positron lifetime was measured at 90K after annealing. The defect size and recovery temperature were determined by the lifetime measurement. The distribution of defects in the depth direction is shown by S-E curve. The chemical state analysis is possible by CBS (Coincidence Doppler Broadening) spectra. The application to silicon-implanted (100 keV, 2x10 sup 1 sup 5 cm sup - sup 2) silicon and oxygen-implanted (180 keV, 2x10 sup 1 sup 5 cm sup - sup 2) silicon are stated. On the oxygen-implanted silicon, the main product was V2 after implantation, V sub 6 O sub 2 at 600degC and V sub 1 sub 0 O sub 6 at 800degC. (S.Y.)

First-Principles Investigations of Defects in Minerals

Science.gov (United States)

Verma, Ashok K.

2011-07-01

The ideal crystal has an infinite 3-dimensional repetition of identical units which may be atoms or molecules. But real crystals are limited in size and they have disorder in stacking which as called defects. Basically three types of defects exist in solids: 1) point defects, 2) line defects, and 3) surface defects. Common point defects are vacant lattice sites, interstitial atoms and impurities and these are known to influence strongly many solid-state transport properties such as diffusion, electrical conduction, creep, etc. In thermal equilibrium point defects concentrations are determined by their formation enthalpies and their movement by their migration barriers. Line and surface defects are though absent from the ideal crystal in thermal equilibrium due to higher energy costs but they are invariably present in all real crystals. Line defects include edge-, screw- and mixed-dislocations and their presence is essential in explaining the mechanical strength and deformation of real crystals. Surface defects may arise at the boundary between two grains, or small crystals, within a larger crystal. A wide variety of grain boundaries can form in a polycrystal depending on factors such growth conditions and thermal treatment. In this talk we will present our first-principles density functional theory based defect studies of SiO2 polymorphs (stishovite, CaCl2-, α-PbO2-, and pyrite-type), Mg2SiO4 polymorphs (forsterite, wadsleyite and ringwoodite) and MgO [1-3]. Briefly, several native point defects including vacancies, interstitials, and their complexes were studied in silica polymorphs upto 200 GPa. Their values increase by a factor of 2 over the entire pressure range studied with large differences in some cases between different phases. The Schottky defects are energetically most favorable at zero pressure whereas O-Frenkel pairs become systematically more favorable at pressures higher than 20 GPa. The geometric and electronic structures of defects and migrating

Toward Intelligent Software Defect Detection

Science.gov (United States)

Benson, Markland J.

2011-01-01

Source code level software defect detection has gone from state of the art to a software engineering best practice. Automated code analysis tools streamline many of the aspects of formal code inspections but have the drawback of being difficult to construct and either prone to false positives or severely limited in the set of defects that can be detected. Machine learning technology provides the promise of learning software defects by example, easing construction of detectors and broadening the range of defects that can be found. Pinpointing software defects with the same level of granularity as prominent source code analysis tools distinguishes this research from past efforts, which focused on analyzing software engineering metrics data with granularity limited to that of a particular function rather than a line of code.

Reduction in Defect Content in ODS Alloys

Energy Technology Data Exchange (ETDEWEB)

Ritherdon, J.; Jones, A.R.

2000-02-01

The work detailed within this report is a continuation of earlier work that was carried out under contract number IDX-SY382V. The earlier work comprised a literature review of the sources and types of defects found principally in Fe-based ODS alloys together with a series of experiments designed to identify defects in ODS Fe{sub 3}Al material and recommend methods of defect reduction. Defects found in the Mechanically Alloyed (MA) ODS Fe{sub 3}Al included regions of incomplete MA, porosity, intrusions and fine-grained stringers. Some defects tended to be found in association with one another e.g. intrusions and fine-grained stringers. Preliminary powder separation experiments were also performed. The scope and objectives of the present work were laid out in the technical proposal ``Reduction in Defect Content in ODS Alloys--II'' which formed the basis of amendment 3 of the current contract. The current studies were devised in the context of the preceding work with a view to extending and concluding certain experiments while exploring new avenues of investigation of defect control and reduction where appropriate. All work proposed was within the context of achieving an ODS Fe{sub 3}Al alloy of improved overall quality and potential creep performance (particularly) in the consolidated, release condition. The interim outturn of the experimental work performed is also reported.

Micromagnetic simulation of exploratory magnetic logic device with missing corner defect

Energy Technology Data Exchange (ETDEWEB)

Yang, Xiaokuo, E-mail: yangxk0123@163.com; Cai, Li; Zhang, Bin; Cui, Huanqing; Zhang, Mingliang

2015-11-15

Magnetic film nanostructures are attractive components of nonvolatile magnetoresistive memories and nanomagnet logic circuits. Recently, we studied switching properties (i.e., null logic preserving) of rectangle shape nanomagnet subjected to fabrication imperfections. Specifically, we presented typical missing corner material-related imperfections and adopted an isosceles triangle to model this defect for nanomagnets. Micromagnetic simulation shows that this kind of imperfections modeling method agrees well with previous experimental observations. Using the proposed defect modeling scheme, we investigate in detail the switching characteristics of different defective stand-alone and coupled nanomagnets. The results suggest that the state transition of defective nanomagnet element highly depends on defect type and device’s aspect ratio, and the defect type B{sub d} needs the largest coercive field, while the defect type D requires the largest null field for switching. These findings can provide key technical parameters and guides for nanomagnet logic circuit design. - Highlights: • We have modeled missing corner defect issue for nanomagnet logic device. • The logic state of defective NML element highly depends on defect type and AR. • The NML device with defect type B{sub d} needs the largest coercive field to reverse state. • The defect type D in the NML devices requires the largest null field to switch.

Electronic structure properties of deep defects in hBN

Science.gov (United States)

Dev, Pratibha; Prdm Collaboration

In recent years, the search for room-temperature solid-state qubit (quantum bit) candidates has revived interest in the study of deep-defect centers in semiconductors. The charged NV-center in diamond is the best known amongst these defects. However, as a host material, diamond poses several challenges and so, increasingly, there is an interest in exploring deep defects in alternative semiconductors such as hBN. The layered structure of hBN makes it a scalable platform for quantum applications, as there is a greater potential for controlling the location of the deep defect in the 2D-matrix through careful experiments. Using density functional theory-based methods, we have studied the electronic and structural properties of several deep defects in hBN. Native defects within hBN layers are shown to have high spin ground states that should survive even at room temperature, making them interesting solid-state qubit candidates in a 2D matrix. Partnership for Reduced Dimensional Material (PRDM) is part of the NSF sponsored Partnerships for Research and Education in Materials (PREM).

Design of CPW-Fed Antenna with Defected Substrate for Wideband Applications

Directory of Open Access Journals (Sweden)

Amar Sharma

2016-01-01

Full Text Available A CPW-fed defected substrate microstrip antenna is proposed. The proposed antenna shows wideband applications by choosing suitable defected crown shaped substrate. Defected substrate also reduces the size of an antenna. The radiating patch of proposed antenna is taken in the form of extended U-shape. The space around the radiator is utilized by extending the ground plane on both sides of radiator. Simulation of proposed antenna is done on Ansoft’s High Frequency Structure Simulator (HFSS v. 14. Measured results are in good agreement with simulated results. The prototype is taken with dimensions 36 mm × 42 mm × 1.6 mm that achieves good return loss, constant group delay, and good radiation characteristics within the entire operating band from 4.5 to 13.5 GHz (9.0 GHz with 100% impedance bandwidth at 9.0 GHz centre frequency. Thus, the proposed antenna is applicable for C and X band applications.

Effect of doping on electronic states in B-doped polycrystalline CVD diamond films

International Nuclear Information System (INIS)

Elsherif, O S; Vernon-Parry, K D; Evans-Freeman, J H; May, P W

2012-01-01

High-resolution Laplace deep-level transient spectroscopy (LDLTS) and thermal admittance spectroscopy (TAS) have been used to determine the effect of boron (B) concentration on the electronic states in polycrystalline chemical vapour deposition diamond thin films grown on silicon by the hot filament method. A combination of high-resolution LDLTS and direct-capture cross-sectional measurements was used to investigate whether the deep electronic states present in the layers originated from point or extended defects. There was good agreement between data on deep electronic levels obtained from DLTS and TAS experiments. Two hole traps, E1 (0.29 eV) and E2 (0.53 eV), were found in a film with a boron content of 1 × 10 19 cm −3 . Both these levels and an additional level, E3 (0.35 eV), were found when the B content was increased to 4 × 10 19 cm −3 . Direct capture cross-sectional measurements of levels E1 and E2 show an unusual dependence on the fill-pulse duration which is interpreted as possibly indicating that the levels are part of an extended defect. The E3 level found in the more highly doped film consisted of two closely spaced levels, both of which show point-like defect characteristics. The E1 level may be due to B-related extended defects within the grain boundaries, whereas the ionization energy of the E2 level is in agreement with literature values from ab initio calculations for B–H complexes. We suggest that the E3 level is due to isolated B-related centres in bulk diamond. (paper)

Visualizing chemical states and defects induced magnetism of graphene oxide by spatially-resolved-X-ray microscopy and spectroscopy.

Science.gov (United States)

Wang, Y F; Singh, Shashi B; Limaye, Mukta V; Shao, Y C; Hsieh, S H; Chen, L Y; Hsueh, H C; Wang, H T; Chiou, J W; Yeh, Y C; Chen, C W; Chen, C H; Ray, Sekhar C; Wang, J; Pong, W F; Takagi, Y; Ohigashi, T; Yokoyama, T; Kosugi, N

2015-10-20

This investigation studies the various magnetic behaviors of graphene oxide (GO) and reduced graphene oxides (rGOs) and elucidates the relationship between the chemical states that involve defects therein and their magnetic behaviors in GO sheets. Magnetic hysteresis loop reveals that the GO is ferromagnetic whereas photo-thermal moderately reduced graphene oxide (M-rGO) and heavily reduced graphene oxide (H-rGO) gradually become paramagnetic behavior at room temperature. Scanning transmission X-ray microscopy and corresponding X-ray absorption near-edge structure spectroscopy were utilized to investigate thoroughly the variation of the C 2p(π*) states that are bound with oxygen-containing and hydroxyl groups, as well as the C 2p(σ*)-derived states in flat and wrinkle regions to clarify the relationship between the spatially-resolved chemical states and the magnetism of GO, M-rGO and H-rGO. The results of X-ray magnetic circular dichroism further support the finding that C 2p(σ*)-derived states are the main origin of the magnetism of GO. Based on experimental results and first-principles calculations, the variation in magnetic behavior from GO to M-rGO and to H-rGO is interpreted, and the origin of ferromagnetism is identified as the C 2p(σ*)-derived states that involve defects/vacancies rather than the C 2p(π*) states that are bound with oxygen-containing and hydroxyl groups on GO sheets.

Levitation of the quantum Hall extended states in the $B\\to$ 0 limit

OpenAIRE

Koschny, Th.; Schweitzer, L.

2004-01-01

We investigate the fate of the quantum Hall extended states within a continuum model with spatially correlated disorder potentials. The model can be projected onto a couple of the lowest Landau bands. Levitation of the $n=0$ critical states is observed if at least the two lowest Landau bands are considered. The dependence on the magnetic length $l_B=(\\hbar/(eB))^{1/2}$ and on the correlation length of the disorder potential $\\eta$ is combined into a single dimensionless parameter $\\hat\\eta=\\e...

A Multistep Extending Truncation Method towards Model Construction of Infinite-State Markov Chains

Directory of Open Access Journals (Sweden)

Kemin Wang

2014-01-01

Full Text Available The model checking of Infinite-State Continuous Time Markov Chains will inevitably encounter the state explosion problem when constructing the CTMCs model; our method is to get a truncated model of the infinite one; to get a sufficient truncated model to meet the model checking of Continuous Stochastic Logic based system properties, we propose a multistep extending advanced truncation method towards model construction of CTMCs and implement it in the INFAMY model checker; the experiment results show that our method is effective.

Extraction of fetal electrocardiogram (ECG) by extended state ...

Indian Academy of Sciences (India)

of fetus and so, an early diagnosis of any cardiac defect before delivery ... By using low noise electronic amplifiers with high common mode rejection ratio, .... One possible ANFIS architecture to implement these two rules is shown in figure 4.

A Frontal Attack on Limiting Defects in GaN

National Research Council Canada - National Science Library

Morkoc, Hadis

2002-01-01

GaN community, particularly under the leadership of Drs. Wood, Win, and Litton, recognized that it is imperative that the extended, and point defects in GaN and related materials, and the mechanisms for their formation are understood...

Micro-bridge defects: characterization and root cause analysis

Science.gov (United States)

Santoro, Gaetano; Van den Heuvel, Dieter; Braggin, Jennifer; Rosslee, Craig; Leray, Philippe J.; Cheng, Shaunee; Jehoul, Christiane; Schreutelkamp, Robert; Hillel, Noam

2010-03-01

Defect review of advanced lithography processes is becoming more and more challenging as feature sizes decrease. Previous studies using a defect review SEM on immersion lithography generated wafers have resulted in a defect classification scheme which, among others, includes a category for micro-bridges. Micro-bridges are small connections between two adjacent lines in photo-resist and are considered device killing defects. Micro-bridge rates also tend to increase as feature sizes decrease, making them even more important for the next technology nodes. Especially because micro-bridge defects can originate from different root causes, the need to further refine and split up the classification of this type of defect into sub groups may become a necessity. This paper focuses on finding the correlation of the different types of micro-bridge defects to a particular root cause based on a full characterization and root cause analysis of this class of defects, by using advanced SEM review capabilities like high quality imaging in very low FOV, Multi Perspective SEM Imaging (MPSI), tilted column and rotated stage (Tilt&Rotation) imaging and Focused Ion Beam (FIB) cross sectioning. Immersion lithography material has been mainly used to generate the set of data presented in this work even though, in the last part of the results, some EUV lithography data will be presented as part of the continuing effort to extend the micro-bridge defect characterization to the EUV technology on 40 nm technology node and beyond.

Linear Extended State Observer-Based Motion Synchronization Control for Hybrid Actuation System of More Electric Aircraft

Directory of Open Access Journals (Sweden)

Xingjian Wang

2017-10-01

Full Text Available Moving towards the more electric aircraft (MEA, a hybrid actuator configuration provides an opportunity to introduce electromechanical actuator (EMA into primary flight control. In the hybrid actuation system (HAS, an electro-hydraulic servo actuator (EHSA and an EMA operate on the same control surface. In order to solve force fighting problem in HAS, this paper proposes a novel linear extended state observer (LESO-based motion synchronization control method. To cope with the problem of unavailability of the state signals required by the motion synchronization controller, LESO is designed for EHSA and EMA to observe the state variables. Based on the observed states of LESO, motion synchronization controllers could enable EHSA and EMA to simultaneously track the desired motion trajectories. Additionally, nonlinearities, uncertainties and unknown disturbances as well as the coupling term between EHSA and EMA can be estimated and compensated by using the extended state of the proposed LESO. Finally, comparative simulation results indicate that the proposed LESO-based motion synchronization controller could reduce significant force fighting between EHSA and EMA.

Linear Extended State Observer-Based Motion Synchronization Control for Hybrid Actuation System of More Electric Aircraft

Science.gov (United States)

Liao, Rui; Shi, Cun; Wang, Shaoping

2017-01-01

Moving towards the more electric aircraft (MEA), a hybrid actuator configuration provides an opportunity to introduce electromechanical actuator (EMA) into primary flight control. In the hybrid actuation system (HAS), an electro-hydraulic servo actuator (EHSA) and an EMA operate on the same control surface. In order to solve force fighting problem in HAS, this paper proposes a novel linear extended state observer (LESO)-based motion synchronization control method. To cope with the problem of unavailability of the state signals required by the motion synchronization controller, LESO is designed for EHSA and EMA to observe the state variables. Based on the observed states of LESO, motion synchronization controllers could enable EHSA and EMA to simultaneously track the desired motion trajectories. Additionally, nonlinearities, uncertainties and unknown disturbances as well as the coupling term between EHSA and EMA can be estimated and compensated by using the extended state of the proposed LESO. Finally, comparative simulation results indicate that the proposed LESO-based motion synchronization controller could reduce significant force fighting between EHSA and EMA. PMID:29068392

Electrical Characterisation of electron beam exposure induced Defects in silicon

Energy Technology Data Exchange (ETDEWEB)

Danga, Helga T., E-mail: helga.danga@up.ac.za; Auret, Francois D.; Coelho, Sergio M.M.; Diale, Mmantsae

2016-01-01

The defects introduced in epitaxially grown p-type silicon (Si) during electron beam exposure were electrically characterised using deep level transient spectroscopy (DLTS) and high resolution Laplace-DLTS. In this process, Si samples were first exposed to the conditions of electron beam deposition (EBD) without metal deposition. This is called electron beam exposure (EBE) herein. After 50 minutes of EBE, nickel (Ni) Schottky contacts were fabricated using the resistive deposition method. The defect level observed using the Ni contacts had an activation energy of H(0.55). This defect has an activation energy similar to that of the I-defect. The defect level is similar to that of the HB4, a boron related defect. DLTS depth profiling revealed that H(0.55) could be detected up to a depth of 0.8 μm below the junction. We found that exposing the samples to EBD conditions without metal deposition introduced a defect which was not introduced by the EBD method. We also observed that the damage caused by EBE extended deeper into the material compared to that caused by EBD.

Phosphorous–vacancy–oxygen defects in silicon

KAUST Repository

Wang, Hao

2013-07-30

Electronic structure calculations employing the hybrid functional approach are used to gain fundamental insight in the interaction of phosphorous with oxygen interstitials and vacancies in silicon. It recently has been proposed, based on a binding energy analysis, that phosphorous–vacancy–oxygen defects may form. In the present study we investigate the stability of this defect as a function of the Fermi energy for the possible charge states. Spin polarization is found to be essential for the charge neutral defect.

Causes of extended shutdown state of 'RA' research reactor in Vinca Institute

International Nuclear Information System (INIS)

Pesic, M.; Kolundzija, V.; Ljubenov, V.; Cupac, S.

2001-01-01

This paper describes the causes and reasons for extended shutdown state of RA research reactor in the 'Vinca' Institute of Nuclear Sciences. Technical and legal matters that led to decision to stop RA reactor operation in 1984 and further problems related to maintenance and preparation for continuation of operation are given. Influence of nuclear policy of Yugoslav government and the 'Vinca' Institute at prolongation of the reactor shutdown state, as consequence of changing of nuclear programme in the country and the world are discussed and underlined. An overview of the legislation in the field of nuclear safety and regulatory control of radiation sources and radioactive materials in Yugoslavia is presented. (author)

A study of complex defects failing by fatigue, ductile tearing and cleavage

International Nuclear Information System (INIS)

Bezensek, B.; Ren, Z.; Hancock, J.W.

2001-01-01

Defect assessment procedures ensure the structural integrity of plant, which may contain complex defects. The present work addresses complex defects with re-entrant sectors, which develop from the interaction of two co-planar surface breaking defects in fatigue. Experimental studies show rapid fatigue growth and amplified crack driving forces in the re-entrant sector. This leads to the rapid evolution of the complex crack into a bounding semielliptical defect. Experiments involving ductile tearing of cracks with a re-entrant sector show that tearing initiates in the re-entrant sector and that the defect evolves into a bounding semielliptical defect. Cleavage failures of defects with re-entrant sectors indicate the re-characterisation procedure is only conservative after invoking constraint arguments. The study confirms the conservatism inherent in the re-characterisation rules of assessment procedures, such as BS 7910 [1] and ASME Section XI [2] for complex defects extending by fatigue or ductile tearing. A potentially non-conservative situation exists for defects with re-entrant sectors failing by cleavage at small fractions of the limit load.(author)

A correlation between the defect states and yellow luminescence in AlGaN/GaN heterostructures

Science.gov (United States)

Jana, Dipankar; Sharma, T. K.

2017-07-01

AlGaN/GaN heterostructures are investigated by performing complementary spectroscopic measurements under novel experimental configurations. Distinct features related to the band edge of AlGaN and GaN layers are clearly observed in surface photovoltage spectroscopy (SPS) spectra. A few more SPS features, which are associated with defects in GaN, are also identified by performing the pump-probe SPS measurements. SPS results are strongly corroborated by the complementary photoluminescence and photoluminescence excitation (PLE) measurements. A correlation between the defect assisted SPS features and yellow luminescence (YL) peak is established by performing pump-probe SPS and PLE measurements. It is found that CN-ON donor complex is responsible for the generation of YL peak in our sample. Further, the deep trap states are found to be present throughout the entire GaN epilayer. It is also noticed that the deep trap states lying at the GaN/Fe-GaN interface make a strong contribution to the YL feature. A phenomenological model is proposed to explain the intensity dependence of the YL feature and the corresponding SPS features in a pump-probe configuration, where a reasonable agreement between the numerical simulations and experimental results is achieved.

Defect-engineered GaN:Mg nanowire arrays for overall water splitting under violet light

International Nuclear Information System (INIS)

Kibria, M. G.; Chowdhury, F. A.; Zhao, S.; Mi, Z.; Trudeau, M. L.; Guo, H.

2015-01-01

We report that by engineering the intra-gap defect related energy states in GaN nanowire arrays using Mg dopants, efficient and stable overall neutral water splitting can be achieved under violet light. Overall neutral water splitting on Rh/Cr 2 O 3 co-catalyst decorated Mg doped GaN nanowires is demonstrated with intra-gap excitation up to 450 nm. Through optimized Mg doping, the absorbed photon conversion efficiency of GaN nanowires reaches ∼43% at 375–450 nm, providing a viable approach to extend the solar absorption of oxide and non-oxide photocatalysts

2012 Gordon Research Conference on Defects in Semiconductors - Formal Schedule and Speaker/Poster Program

Energy Technology Data Exchange (ETDEWEB)

Glaser, Evan [Naval Research Lab. (NRL), Washington, DC (United States)

2012-08-17

The meeting shall strive to develop and further the fundamental understanding of defects and their roles in the structural, electronic, optical, and magnetic properties of bulk, thin film, and nanoscale semiconductors and device structures. Point and extended defects will be addressed in a broad range of electronic materials of particular current interest, including wide bandgap semiconductors, metal-oxides, carbon-based semiconductors (e.g., diamond, graphene, etc.), organic semiconductors, photovoltaic/solar cell materials, and others of similar interest. This interest includes novel defect detection/imaging techniques and advanced defect computational methods.

Defect formation energy for charge states of CdMnTe

International Nuclear Information System (INIS)

Mehrabova, M.A.; Orujov, H.S.; Hasanli, R.N.

2014-01-01

Full text : Cd 1 -xMn x Te semimagnetic semiconductors are promising materials for X-ray and gamma-detectors, solar cells, optic insulators and etc. For obtaining high-sensitive and radiation-resistant materials, as well as creation of devices based on them it is necessary to know the mechanism of defect formation in semimagnetic conductors. Defects in semiconductors not only influence on electrical and optic properties of these materials, but also display their interesting physical properties

Embedded defects

International Nuclear Information System (INIS)

Barriola, M.; Vachaspati, T.; Bucher, M.

1994-01-01

We give a prescription for embedding classical solutions and, in particular, topological defects in field theories which are invariant under symmetry groups that are not necessarily simple. After providing examples of embedded defects in field theories based on simple groups, we consider the electroweak model and show that it contains the Z string and a one-parameter family of strings called the W(α) string. It is argued that although the members of this family are gauge equivalent when considered in isolation, each member becomes physically distinct when multistring configurations are considered. We then turn to the issue of stability of embedded defects and demonstrate the instability of a large class of such solutions in the absence of bound states or condensates. The Z string is shown to be unstable for all values of the Higgs boson mass when θ W =π/4. W strings are also shown to be unstable for a large range of parameters. Embedded monopoles suffer from the Brandt-Neri-Coleman instability. Finally, we connect the electroweak string solutions to the sphaleron

Extended great deluge algorithm for the imperfect preventive maintenance optimization of multi-state systems

International Nuclear Information System (INIS)

Nahas, Nabil; Khatab, Abdelhakim; Ait-Kadi, Daoud; Nourelfath, Mustapha

2008-01-01

This paper deals with preventive maintenance optimization problem for multi-state systems (MSS). This problem was initially addressed and solved by Levitin and Lisnianski [Optimization of imperfect preventive maintenance for multi-state systems. Reliab Eng Syst Saf 2000;67:193-203]. It consists on finding an optimal sequence of maintenance actions which minimizes maintenance cost while providing the desired system reliability level. This paper proposes an approach which improves the results obtained by genetic algorithm (GENITOR) in Levitin and Lisnianski [Optimization of imperfect preventive maintenance for multi-state systems. Reliab Eng Syst Saf 2000;67:193-203]. The considered MSS have a range of performance levels and their reliability is defined to be the ability to meet a given demand. This reliability is evaluated by using the universal generating function technique. An optimization method based on the extended great deluge algorithm is proposed. This method has the advantage over other methods to be simple and requires less effort for its implementation. The developed algorithm is compared to than in Levitin and Lisnianski [Optimization of imperfect preventive maintenance for multi-state systems. Reliab Eng Syst Saf 2000;67:193-203] by using a reference example and two newly generated examples. This comparison shows that the extended great deluge gives the best solutions (i.e. those with minimal costs) for 8 instances among 10

Effect of copper on the recombination activity of extended defects in silicon

Energy Technology Data Exchange (ETDEWEB)

Feklisova, O. V., E-mail: feklisov@iptm.ru; Yakimov, E. B. [Russian Academy of Sciences, Institute of Microelectronics Technology and High-Purity Materials (Russian Federation)

2015-06-15

The effect of copper atoms introduced by high-temperature diffusion on the recombination properties of dislocations and dislocation trails in p-type single-crystal silicon is studied by the electron-beam-induced current technique. It is shown that, in contrast to dislocations, dislocation trails exhibit an increase in recombination activity after the introduction of copper. Bright contrast appearance in the vicinity of dislocation trails is detected after the diffusion of copper and quenching of the samples. The contrast depends on the defect density in these trails.

Defect detection module

International Nuclear Information System (INIS)

Ernwein, R.; Westermann, G.

1986-01-01

The ''defect detector'' module is aimed at exceptional event or state recording. Foreseen for voltage presence monitoring on high supply voltage module of drift chambers, its characteristics can also show up the vanishing of supply voltage and take in account transitory fast signals [fr

Sudden birth versus sudden death of entanglement for the extended Werner-like state in a dissipative environment

International Nuclear Information System (INIS)

Chuan-Jia, Shan; Tao, Chen; Ji-Bing, Liu; Wei-Wen, Cheng; Tang-Kun, Liu; Yan-Xia, Huang; Hong, Li

2010-01-01

In this paper, we investigate the dynamical behaviour of entanglement in terms of concurrence in a bipartite system subjected to an external magnetic field under the action of dissipative environments in the extended Werner-like initial state. The interesting phenomenon of entanglement sudden death as well as sudden birth appears during the evolution process. We analyse in detail the effect of the purity of the initial entangled state of two qubits via Heisenberg XY interaction on the apparition time of entanglement sudden death and entanglement sudden birth. Furthermore, the conditions on the conversion of entanglement sudden death and entanglement sudden birth can be generalized when the initial entangled state is not pure. In particular, a critical purity of the initial mixed entangled state exists, above which entanglement sudden birth vanishes while entanglement sudden death appears. It is also noticed that stable entanglement, which is independent of different initial states of the qubits (pure or mixed state), occurs even in the presence of decoherence. These results arising from the combination of the extended Werner-like initial state and dissipative environments suggest an approach to control and enhance the entanglement even after purity induced sudden birth, death and revival. (general)

Relativistic atomic matrix elements of rq for arbitrary states in the quantum-defect approximation

International Nuclear Information System (INIS)

Owono Owono, L.C.; Owona Angue, M.L.C.; Kwato Njock, M.G.; Oumarou, B.

2004-01-01

Recurrence relations used in the calculation of matrix elements of r q for arbitrary q and states of the relativistic one-electron atom with a point-like ionic core are obtained with Dirac and quasirelativistic effective radial Hamiltonians. The phenomenological and supersymmetry-inspired quantum-defect approaches introduced in previous works to model the electron-core interactions are employed. The formulas worked out on the basis of a hypervirial inspired method may be viewed as a generalization to off-diagonal cases of our recently reported results on the evaluation of expectation values of r q

Defect spectroscopy of single ZnO microwires

Science.gov (United States)

Villafuerte, M.; Ferreyra, J. M.; Zapata, C.; Barzola-Quiquia, J.; Iikawa, F.; Esquinazi, P.; Heluani, S. P.; de Lima, M. M.; Cantarero, A.

2014-04-01

The point defects of single ZnO microwires grown by carbothermal reduction were studied by microphotoluminescence, photoresistance excitation spectra, and resistance as a function of the temperature. We found the deep level defect density profile along the microwire showing that the concentration of defects decreases from the base to the tip of the microwires and this effect correlates with a band gap narrowing. The results show a characteristic deep defect levels inside the gap at 0.88 eV from the top of the VB. The resistance as a function of the temperature shows defect levels next to the bottom of the CB at 110 meV and a mean defect concentration of 4 × 1018 cm-3. This combination of techniques allows us to study the band gap values and defects states inside the gap in single ZnO microwires and opens the possibility to be used as a defect spectroscopy method.

Defect Proliferation in Active Nematic Suspensions

Science.gov (United States)

Mishra, Prashant; Bowick, Mark J.; Giomi, Luca; Marchetti, M. Cristina

2014-03-01

The rich structure of equilibrium nematic suspensions, with their characteristic disclination defects, is modified when active forces come into play. The uniform nematic state is known to be unstable to splay (extensile) or bend (contractile) deformations above a critical activity. At even higher activity the flow becomes oscillatory and eventually turbulent. Using hydrodynamics, we classify the active flow regimes as functions of activity and order parameter friction for both contractile and extensile systems. The turbulent regime is marked by a non-zero steady state density of mobile defect pairs. The defect density itself scales with an ``active Ericksen number,'' defined as the ratio of the rate at which activity is injected into the system to the relaxation rate of orientational deformations. The work at Syracuse University was supported by the NSF on grant DMR-1004789 and by the Syracuse Soft Matter Program.

Rational extended thermodynamics

CERN Document Server

Müller, Ingo

1998-01-01

Ordinary thermodynamics provides reliable results when the thermodynamic fields are smooth, in the sense that there are no steep gradients and no rapid changes. In fluids and gases this is the domain of the equations of Navier-Stokes and Fourier. Extended thermodynamics becomes relevant for rapidly varying and strongly inhomogeneous processes. Thus the propagation of high­ frequency waves, and the shape of shock waves, and the regression of small-scale fluctuation are governed by extended thermodynamics. The field equations of ordinary thermodynamics are parabolic while extended thermodynamics is governed by hyperbolic systems. The main ingredients of extended thermodynamics are • field equations of balance type, • constitutive quantities depending on the present local state and • entropy as a concave function of the state variables. This set of assumptions leads to first order quasi-linear symmetric hyperbolic systems of field equations; it guarantees the well-posedness of initial value problems and f...

Computed tomography angiography intraluminal filling defect is predictive of internal carotid artery free-floating thrombus

Energy Technology Data Exchange (ETDEWEB)

Jaberi, A.; Lum, C.; Stefanski, P.; Iancu, D. [University of Ottawa, Faculty of Medicine, Ottawa, Ontario (Canada); The Ottawa Hospital, Department of Radiology, Neuroradiology Section, Ottawa, Ontario (Canada); Thornhill, R. [Neurosciences and Clinical Epidemiology Program/Methods Centre, Ottawa Hospital Research Institute, Ottawa, Ontario (Canada); The Ottawa Hospital, Department of Radiology, Neuroradiology Section, Ottawa, Ontario (Canada); Petrcich, W. [Neurosciences and Clinical Epidemiology Program/Methods Centre, Ottawa Hospital Research Institute, Ottawa, Ontario (Canada); Momoli, F. [Children' s Hospital of Eastern Ontario Research Institute, Ottawa, Ontario (Canada); University of Ottawa, Department of Epidemiology and Community Medicine, Ottawa, Ontario (Canada); Torres, C.; Dowlatshahi, D. [University of Ottawa, Faculty of Medicine, Ottawa, Ontario (Canada); University of Ottawa, Division of Neurology, Department of Medicine, Ottawa, Ontario (Canada)

2014-01-15

Filling defects at the internal carotid artery (ICA) origin in the work-up of stroke or transient ischemic attack may be an ulcerated plaque or free-floating thrombus (FFT). This may be challenging to distinguish, as they can appear morphologically similar. This is an important distinction as FFT can potentially embolize distally, and its management differs. We describe a series of patients with suspected FFT and evaluate its imaging appearance, clinical features, and evolution with therapy. Between 2008 and 2013, we prospectively collected consecutive patients with proximal ICA filling defects in the axial plane surrounded by contrast on CT/MR angiography. We defined FFT as a filling defect that resolved on follow-up imaging. We assessed the cranial-caudal dimension of the filling defect and receiver operating characteristics to identify clinical and radiological variables that distinguished FFT from complex ulcerated plaque. Intraluminal filling defects were identified in 32 patients. Filling defects and resolved or decreased in 25 patients (78 %) and felt to be FFT; there was no change in 7 (22 %). Resolved defects and those that decreased in size extended more cranially than those that remained unchanged: 7.3 mm (4.2-15.9) versus 3.1 mm (2.7-3.7; p = 0.0038). Receiver operating characteristic analysis established a threshold of 3.8 mm (filling defect length), sensitivity of 88 %, specificity of 86 %, and area under the curve of 0.86 (p < 0.0001) for distinguishing FFT from plaque. Filling defects in the proximal ICA extending cranially >3.8 mm were more likely to be FFT than complex ulcerated plaque. Further studies evaluating filling defect length as a predictor for FFT are warranted. (orig.)

Dual extended Kalman filter for combined estimation of vehicle state and road friction

Science.gov (United States)

Zong, Changfu; Hu, Dan; Zheng, Hongyu

2013-03-01

Vehicle state and tire-road adhesion are of great use and importance to vehicle active safety control systems. However, it is always not easy to obtain the information with high accuracy and low expense. Recently, many estimation methods have been put forward to solve such problems, in which Kalman filter becomes one of the most popular techniques. Nevertheless, the use of complicated model always leads to poor real-time estimation while the role of road friction coefficient is often ignored. For the purpose of enhancing the real time performance of the algorithm and pursuing precise estimation of vehicle states, a model-based estimator is proposed to conduct combined estimation of vehicle states and road friction coefficients. The estimator is designed based on a three-DOF vehicle model coupled with the Highway Safety Research Institute(HSRI) tire model; the dual extended Kalman filter (DEKF) technique is employed, which can be regarded as two extended Kalman filters operating and communicating simultaneously. Effectiveness of the estimation is firstly examined by comparing the outputs of the estimator with the responses of the vehicle model in CarSim under three typical road adhesion conditions(high-friction, low-friction, and joint-friction). On this basis, driving simulator experiments are carried out to further investigate the practical application of the estimator. Numerical results from CarSim and driving simulator both demonstrate that the estimator designed is capable of estimating the vehicle states and road friction coefficient with reasonable accuracy. The DEKF-based estimator proposed provides the essential information for the vehicle active control system with low expense and decent precision, and offers the possibility of real car application in future.

Altering graphene line defect properties using chemistry

Science.gov (United States)

Vasudevan, Smitha; White, Carter; Gunlycke, Daniel

2012-02-01

First-principles calculations are presented of a fundamental topological line defect in graphene that was observed and reported in Nature Nanotech. 5, 326 (2010). These calculations show that atoms and smaller molecules can bind covalently to the surface in the vicinity of the graphene line defect. It is also shown that the chemistry at the line defect has a strong effect on its electronic and magnetic properties, e.g. the ferromagnetically aligned moments along the line defect can be quenched by some adsorbates. The strong effect of the adsorbates on the line defect properties can be understood by examining how these adsorbates affect the boundary-localized states in the vicinity of the Fermi level. We also expect that the line defect chemistry will significantly affect the scattering properties of incident low-energy particles approaching it from graphene.

FOREWORD International Conference on Defects in Insulating Materials

Science.gov (United States)

Valerio, Mário Ernesto Giroldo; Jackson, R. A.

2010-11-01

applications will be presented alongside fundamental measurements and theories. The main scientific areas included: 1 Fundamental physical phenomena Point and extended defects in wide band-gap systems: oxides, fluorides, nitrides, alkali- and silver-halides, perovskites, minerals, ceramics, nano-structures, organic molecular crystals, glasses, high-k and low-k materials, photonic crystals. 2 Defects at surfaces and interfaces Thin films and low-dimensional systems. Colloids, nano-crystals, and aggregates. Defects and material preparation technology. Defects modelling and computational methods. Radiation effects, radiation induced defects, colour centres. Luminescence of excitons, impurities, and defects. Electronic excitations, excited state dynamics, radiative and non-radiative relaxations. Scintillation, energy transfer and storage, carrier trapping phenomena. Non-linear optical phenomena. Laser active centres. Phonons and defects, electron-phonon interactions. Defect diffusion, ionic relaxations, ionic transport. 3 Technological applications Radiologic imaging and detection, scintillators, and dosimeters. Optical devices and photonics, photorefractive electro-optics, optical fibres, lasers. Materials for micro-electronics. Solid electrolytes, fuel cells, electrochemical sensors, fast ionic conductors. Conference chairpersons: Mário E G Valerio (Conference Chairman), Physics Department, Federal University of Sergipe, SE, Brasil Robert A Jackson (Programme Chairman), School of Physical and Geographical Sciences, Keele University, Keele, UK Conference committees: International Advisory Committee R Capelletti, Italy A V Chadwick, UK J Corish, Ireland J D Comins, South Africa H W den Hartog, The Netherlands K Funke, Germany Robert A Jackson, UK O Kanert, Germany A A Kaplyanskii, Russia A Lushchik, Estonia F Lüty, USA M Moreno, Spain P E Ngoepe, South Africa M Nikl, Czech Republic S V Nistor, Romania Ch Pedrini, France O F Schirmer, Germany J-M Spaeth, Germany A M Stoneham, UK

Theory of Defects in Semiconductors

CERN Document Server

Drabold, David A

2007-01-01

Semiconductor science and technology is the art of defect engineering. The theoretical modeling of defects has improved dramatically over the past decade. These tools are now applied to a wide range of materials issues: quantum dots, buckyballs, spintronics, interfaces, amorphous systems, and many others. This volume presents a coherent and detailed description of the field, and brings together leaders in theoretical research. Today's state-of-the-art, as well as tomorrow’s tools, are discussed: the supercell-pseudopotential method, the GW formalism,Quantum Monte Carlo, learn-on-the-fly molecular dynamics, finite-temperature treatments, etc. A wealth of applications are included, from point defects to wafer bonding or the propagation of dislocation.

The calculated modelling of a local thinning of a pipe fragment subjected to erosive-corrosive wear to definition of a stress state of construction at the defect zone

International Nuclear Information System (INIS)

Shugajlo, O.P.; Krits'kij, V.B.; Lugovoj, P.Z.

2005-01-01

The models of a defect-thinning of pipes fragment as an ellipse, elliptic paraboloid and elliptic cone are developed in order to analyze their impact on a stress state of a construction at the defect zone

Quasiparticle Scattering off Defects and Possible Bound States in Charge-Ordered YBa_{2}Cu_{3}O_{y}.

Science.gov (United States)

Zhou, R; Hirata, M; Wu, T; Vinograd, I; Mayaffre, H; Krämer, S; Horvatić, M; Berthier, C; Reyes, A P; Kuhns, P L; Liang, R; Hardy, W N; Bonn, D A; Julien, M-H

2017-01-06

We report the NMR observation of a skewed distribution of ^{17}O Knight shifts when a magnetic field quenches superconductivity and induces long-range charge-density-wave (CDW) order in YBa_{2}Cu_{3}O_{y}. This distribution is explained by an inhomogeneous pattern of the local density of states N(E_{F}) arising from quasiparticle scattering off, yet unidentified, defects in the CDW state. We argue that the effect is most likely related to the formation of quasiparticle bound states, as is known to occur, under specific circumstances, in some metals and superconductors (but not in the CDW state, in general, except for very few cases in 1D materials). These observations should provide insight into the microscopic nature of the CDW, especially regarding the reconstructed band structure and the sensitivity to disorder.

Characterization of point defects in monolayer arsenene

Science.gov (United States)

Liang, Xiongyi; Ng, Siu-Pang; Ding, Ning; Wu, Chi-Man Lawrence

2018-06-01

Topological defects that are inevitably found in 2D materials can dramatically affect their properties. Using density functional theory (DFT) calculations and ab initio molecular dynamics (AIMD) method, the structural, thermodynamic, electronic and magnetic properties of six types of typical point defects in arsenene, i.e. the Stone-Wales defect, single and double vacancies and adatoms, were systemically studied. It was found that these defects were all more easily generated in arsenene with lower formation energies than those with graphene and silicene. Stone-Wales defects can be transformed from pristine arsenene by overcoming a barrier of 2.19 eV and single vacancy defects tend to coalesce into double vacancy defects by diffusion. However, a type of adatom defect does not exhibit kinetic stability at room temperature. In addition, SV defects and another type of adatom defect can remarkably affect the electronic and magnetic properties of arsenene, e.g. they can introduce localized states near the Fermi level, as well as a strongly local magnetic moment due to dangling bond and unpaired electron. Furthermore, the simulated scanning tunneling microscopy (STM) and Raman spectroscopy were computed and the types of point defects can be fully characterized by correlating the STM images and Raman spectra to the defective atomistic structures. The results provide significant insights to the effect of defects in arsenene for potential applications, as well as identifications of two helpful tools (STM and Raman spectroscopy) to distinguish the type of defects in arsenene for future experiments.

Dependence of hydrogen-induced lattice defects and hydrogen embrittlement of cold-drawn pearlitic steels on hydrogen trap state, temperature, strain rate and hydrogen content

International Nuclear Information System (INIS)

Doshida, Tomoki; Takai, Kenichi

2014-01-01

The effects of the hydrogen state, temperature, strain rate and hydrogen content on hydrogen embrittlement susceptibility and hydrogen-induced lattice defects were evaluated for cold-drawn pearlitic steel that absorbed hydrogen in two trapping states. Firstly, tensile tests were carried out under various conditions to evaluate hydrogen embrittlement susceptibility. The results showed that peak 2 hydrogen, desorbed at temperatures above 200 °C as determined by thermal desorption analysis (TDA), had no significant effect on hydrogen embrittlement susceptibility. In contrast, hydrogen embrittlement susceptibility increased in the presence of peak 1 hydrogen, desorbed from room temperature to 200 °C as determined by TDA, at temperatures higher than −30 °C, at lower strain rates and with higher hydrogen content. Next, the same effects on hydrogen-induced lattice defects were also evaluated by TDA using hydrogen as a probe. Peak 2 hydrogen showed no significant effect on either hydrogen-induced lattice defects or hydrogen embrittlement susceptibility. It was found that hydrogen-induced lattice defects formed under the conditions where hydrogen embrittlement susceptibility increased. This relationship indicates that hydrogen embrittlement susceptibility was higher under the conditions where the formation of hydrogen-induced lattice defects tended to be enhanced. Since hydrogen-induced lattice defects formed by the interaction between hydrogen and strain were annihilated by annealing at a temperature of 200 °C, they were presumably vacancies or vacancy clusters. One of the common atomic-level changes that occur in cold-drawn pearlitic steel showing higher hydrogen embrittlement susceptibility is the formation of vacancies and vacancy clusters

Midgap states and band gap modification in defective graphene/h-BN heterostructures

NARCIS (Netherlands)

Sachs, B.; Wehling, T.O.; Katsnelson, M.I.; Lichtenstein, A.I.

2016-01-01

The role of defects in van der Waals heterostructures made of graphene and hexagonal boron nitride (h-BN) is studied using a combination of ab initio and model calculations. Despite the weak van der Waals interaction between layers, defects residing in h-BN, such as carbon impurities and antisite

Defects and defect processes in nonmetallic solids

CERN Document Server

Hayes, W

2004-01-01

This extensive survey covers defects in nonmetals, emphasizing point defects and point-defect processes. It encompasses electronic, vibrational, and optical properties of defective solids, plus dislocations and grain boundaries. 1985 edition.

Estimating Lithium-Ion Battery State of Charge and Parameters Using a Continuous-Discrete Extended Kalman Filter

Directory of Open Access Journals (Sweden)

Yasser Diab

2017-07-01

Full Text Available A real-time determination of battery parameters is challenging because batteries are non-linear, time-varying systems. The transient behaviour of lithium-ion batteries is modelled by a Thevenin-equivalent circuit with two time constants characterising activation and concentration polarization. An experimental approach is proposed for directly determining battery parameters as a function of physical quantities. The model’s parameters are a function of the state of charge and of the discharge rate. These can be expressed by regression equations in the model to derive a continuous-discrete extended Kalman estimator of the state of charge and of other parameters. This technique is based on numerical integration of the ordinary differential equations to predict the state of the stochastic dynamic system and the corresponding error covariance matrix. Then a standard correction step of the extended Kalman filter (EKF is applied to increase the accuracy of estimated parameters. Simulations resulting from this proposed estimator model were compared with experimental results under a variety of operating scenarios—analysis of the results demonstrate the accuracy of the estimator for correctly identifying battery parameters.

First-principles engineering of charged defects for two-dimensional quantum technologies

Science.gov (United States)

Wu, Feng; Galatas, Andrew; Sundararaman, Ravishankar; Rocca, Dario; Ping, Yuan

2017-12-01

Charged defects in two-dimensional (2D) materials have emerging applications in quantum technologies such as quantum emitters and quantum computation. The advancement of these technologies requires a rational design of ideal defect centers, demanding reliable computation methods for the quantitatively accurate prediction of defect properties. We present an accurate, parameter-free, and efficient procedure to evaluate the quasiparticle defect states and thermodynamic charge transition levels of defects in 2D materials. Importantly, we solve critical issues that stem from the strongly anisotropic screening in 2D materials, that have so far precluded the accurate prediction of charge transition levels in these materials. Using this procedure, we investigate various defects in monolayer hexagonal boron nitride (h -BN ) for their charge transition levels, stable spin states, and optical excitations. We identify CBVN (nitrogen vacancy adjacent to carbon substitution of boron) to be the most promising defect candidate for scalable quantum bit and emitter applications.

Electronic structure of point defects in semiconductors

International Nuclear Information System (INIS)

Bruneval, Fabien

2014-01-01

trace concentration (of the order of one part per million). However, owing to the heavy burden of the quantum-mechanical electronic structure calculations, which grow very rapidly with the number of electrons, the present day simulations do not easily exceed a few hundred atoms nowadays. This induces effective defect concentrations of the order of one percent which are very far from the diluted defects observed in the experiments. The extrapolation of high concentrations to low concentrations is difficult because defects in semiconductors often bear a net electric charge which induces long-range interactions between the spuriously interacting charged defects. The first part of my work presents the techniques available in this area, improvements in the techniques and some understanding of these spurious interactions. The second topic addressed in this memoir focuses on improving the electronic structure of defects in semiconductors and insulators. Defects in these materials introduce discrete electronic levels within the band gap of the pristine bulk material. These electronic levels correspond to the electrons involved in the defect states. Their wave function is more or less localized around the defect region and the filling of the state may also vary with the thermodynamic conditions (Fermi level). These levels inside the band gap govern the modification of the properties of electronic and optical transport. Unfortunately the standard ab initio approaches, in the context of Density Functional Theory (DFT), are unable to get the correct band gaps of semiconductors and insulators. This is why many defect properties cannot be predicted with certainty within these approaches. This second part demonstrates how the introduction of the many-body perturbation theory in the so-called GW approximation solves the problem of band gaps and thus allows one to obtain more reliable defect properties. Of course, the field of ab initio electronic structure for defects is far from being

Relaxation of a strained 3C-SiC(1 1 1) thin film on silicon by He+ and O+ ion beam defect engineering

International Nuclear Information System (INIS)

Häberlen, M.; Murphy, B.; Stritzker, B.; Lindner, J.K.N.

2012-01-01

In this paper we report on the successful reduction of tensile strain in a thin strained ion-beam synthesized 3C-SiC(1 1 1) layer on silicon. The creation of a near-interface defect structure consisting of nanometric voids and stacking fault type defects by He ion implantation and subsequent annealing yields significant relaxation in the top SiC film. The microstructure of the defect layer is studied by transmission electron microscopy, and the strain state of the 3C-SiC layer was studied by high-resolution X-ray diffraction in a parallel beam configuration. Typical process conditions for the growth of GaN films on the SiC layer were emulated by high temperature treatments in a rapid thermal annealer or a quartz tube furnace. It is found that prolonged annealing at high temperatures leads to ripening of the voids and to a weaker reduction of the tensile strain. It is shown that this problem can be overcome by the co-implantation of oxygen ions to form highly thermally stable void/extended defect structures.

Possible mechanism for d0 ferromagnetism mediated by intrinsic defects

KAUST Repository

Zhang, Zhenkui

2014-01-01

We examine the effects of several intrinsic defects on the magnetic behavior of ZnS nanostructures using hybrid density functional theory to gain insights into d0 ferromagnetism. Previous studies have predicted that the magnetism is due to a coupling between partially filled defect states. By taking into account the electronic correlations, we find an additional splitting of the defect states in Zn vacancies and thus the possibility of gaining energy by preferential filling of hole states, establishing ferromagnetism between spin polarized S 3p holes. We demonstrate a crucial role of neutral S vacancies in promoting ferromagnetism between positively charged S vacancies. S dangling bonds on the nanoparticle surface also induce ferromagnetism. This journal is

On the relationship between rutile/anatase ratio and the nature of defect states in sub-100 nm TiO2 nanostructures: experimental insights

KAUST Repository

Soliman, Moamen M.

2018-02-02

Black TiO2 is being widely investigated due to its superior optical activity and potential applications in photocatalytic hydrogen generation. Herein, the limitations of the hydrogenation process of TiO2 nanostructures are unraveled by exploiting the fundamental tradeoffs affecting the overall efficiency of the water splitting process. To control the nature and concentration of defect states, different reduction rates are applied to sub-100 nm TiO2 nanotubes, chosen primarily for their superiority over their long counterparts. X-Ray Photoelectron Spectroscopy disclosed changes in the stoichiometry of TiO2 with the reduction rate. UV-vis and Raman spectra showed that high reduction rates promote the formation of the rutile phase in TiO2, which is inactive towards water splitting. Furthermore, electrochemical analysis revealed that such high rates induce a higher concentration of localized electronic defect states that hinder the water splitting performance. Finally, incident photon-to-current conversion efficiency (IPCE) highlighted the optimum reduction rate that attains a relatively lower defect concentration as well as lower rutile content, thereby achieving the highest conversion efficiency.

Reconstruction of a midfacial defect using an intraoral-extraoral combination prosthesis employing magnets: a clinical report

OpenAIRE

Nair, Anoop; Regish, K M.; Shah, Farhan K.; Prithviraj, D R.

2012-01-01

Radical maxillectomy frequently leads to extended defects in hard and soft tissues that result in a connection between the oral cavities and orbit. If the defect cannot be surgically reconstructed, a combination prosthesis may be necessary to remedy dysfunction in patient function, comfort, esthetics. For minor defects, enlargement of the base of the intra oral prosthesis is generally sufficient. Resections that affect more than one third of the maxilla usually require an intra oral and an ex...

Resonance scattering of Rayleigh waves by a mass defect

International Nuclear Information System (INIS)

Croitoru, M.; Grecu, D.

1978-06-01

The resonance scattering of an incident Rayleigh wave by a mass defect extending over a small cylindrical region situated in the surface of a semi-infinite isotropic, elastic medium is investigated by means of the Green's function method. The form of the differential cross-section for the scattering into different channels exhibits a strong resonance phenomenon at two frequencies. The expression of the resonance frequencies as well as of the corresponding widths depends on the relative change in mass density. The main assumption that the wavelengths of incoming and scattered wave are large compared to the defect dimension implies a large relative mass-density change. (author)

Analysis of bearing stiffness variations, contact forces and vibrations in radially loaded double row rolling element bearings with raceway defects

Science.gov (United States)

Petersen, Dick; Howard, Carl; Sawalhi, Nader; Moazen Ahmadi, Alireza; Singh, Sarabjeet

2015-01-01

A method is presented for calculating and analyzing the quasi-static load distribution and varying stiffness of a radially loaded double row bearing with a raceway defect of varying depth, length, and surface roughness. The method is applied to ball bearings on gearbox and fan test rigs seeded with line or extended outer raceway defects. When balls pass through the defect and lose all or part of their load carrying capacity, the load is redistributed between the loaded balls. This includes balls positioned outside the defect such that good raceway sections are subjected to increased loading when a defect is present. The defective bearing stiffness varies periodically at the ball spacing, and only differs from the good bearing case when balls are positioned in the defect. In this instance, the stiffness decreases in the loaded direction and increases in the unloaded direction. For an extended spall, which always has one or more balls positioned in the defect, this results in an average stiffness over the ball spacing period that is lower in the loaded direction in comparison to both the line spall and good bearing cases. The variation in bearing stiffness due to the defect produces parametric excitations of the bearing assembly. The qualitative character of the vibration response correlates to the character of the stiffness variations. Rapid stiffness changes at a defect exit produce impulses. Slower stiffness variations due to large wavelength waviness features in an extended spall produce low frequency excitation which results in defect components in the velocity spectra. The contact forces fluctuate around the quasi-static loads on the balls, with rapid stiffness changes producing high magnitude impulsive force fluctuations. Furthermore, it is shown that analyzing the properties of the dynamic model linearized at the quasi-static solutions provides greater insight into the time-frequency characteristics of the vibration response. This is demonstrated by relating

Structural and electronic properties of zigzag InP nanoribbons with Stone–Wales type defects

International Nuclear Information System (INIS)

Longo, R C; Carrete, J; Varela, L M; Gallego, L J

2016-01-01

By means of density-functional-theoretic calculations, we investigate the structural and electronic properties of a hexagonal InP sheet and of hydrogen-passivated zigzag InP nanoribbons (ZInPNRs) with Stone–Wales (SW)-type defects. Our results show that the influence of this kind of defect is not limited to the defected region but it leads to the formation of ripples that extend across the systems, in keeping with the results obtained recently for graphene and silicene sheets. The presence of SW defects in ZInPNRs causes an appreciable broadening of the band gap and transforms the indirect-bandgap perfect ZInPNR into a direct-bandgap semiconductor. An external transverse electric field, regardless of its direction, reduces the gap in both the perfect and defective ZInPNRs. (paper)

Formation of Defect-Free Latex Films on Porous Fiber Supports

KAUST Repository

Lively, Ryan P.

2011-09-28

We present here the creation of a defect-free polyvinylidene chloride barrier layer on the lumen-side of a hollow fiber sorbent. Hollow fiber sorbents have previously been shown to be promising materials for enabling low-cost CO 2 capture, provided a defect-free lumen-side barrier layer can be created. Film experiments examined the effect of drying rate, latex age, substrate porosity (porous vs nonporous), and substrate hydrophobicity/ hydrophilicity. Film studies show that in ideal conditions (i.e., slow drying, fresh latex, and smooth nonporous substrate), a defect-free film can be formed, whereas the other permutations of the variables investigated led to defective films. These results were extended to hollow fiber sorbents, and despite using fresh latex and relatively slow drying conditions, a defective lumen-side layer resulted. XRD and DSC indicate that polyvinylidene chloride latex develops crystallinity over time, thereby inhibiting proper film formation as confirmed by SEM and gas permeation. This and other key additional challenges associated with the porous hollow fiber substrate vs the nonporous flat substrate were overcome. By employing a toluene-vapor saturated drying gas (a swelling solvent for polyvinylidene chloride) a defect-free lumen-side barrier layer was created, as investigated by gas and water vapor permeation. © 2011 American Chemical Society.

Electronic transport of bilayer graphene with asymmetry line defects

International Nuclear Information System (INIS)

Zhao Xiao-Ming; Chen Chan; Liang Ying; Kou Su-Peng; Wu Ya-Jie

2016-01-01

In this paper, we study the quantum properties of a bilayer graphene with (asymmetry) line defects. The localized states are found around the line defects. Thus, the line defects on one certain layer of the bilayer graphene can lead to an electric transport channel. By adding a bias potential along the direction of the line defects, we calculate the electric conductivity of bilayer graphene with line defects using the Landauer–Büttiker theory, and show that the channel affects the electric conductivity remarkably by comparing the results with those in a perfect bilayer graphene. This one-dimensional line electric channel has the potential to be applied in nanotechnology engineering. (paper)

Point defects in lines in single crystalline phosphorene: directional migration and tunable band gaps.

Science.gov (United States)

Li, Xiuling; Ma, Liang; Wang, Dayong; Zeng, Xiao Cheng; Wu, Xiaojun; Yang, Jinlong

2016-10-20

Extended line defects in two-dimensional (2D) materials can play an important role in modulating their electronic properties. During the experimental synthesis of 2D materials, line defects are commonly generated at grain boundaries between domains of different orientations. In this work, twelve types of line-defect structures in single crystalline phosphorene are examined by using first-principles calculations. These line defects are typically formed via migration and aggregation of intrinsic point defects, including the Stone-Wales (SW), single or double vacancy (SV or DV) defects. Our calculated results demonstrate that the migration of point defects in phosphorene is anisotropic, for instance, the lowest migration energy barriers are 1.39 (or 0.40) and 2.58 (or 0.49) eV for SW (or SV) defects in zigzag and armchair directions, respectively. The aggregation of point defects into lines is energetically favorable compared with the separated point defects in phosphorene. In particular, the axis of line defects in phosphorene is direction-selective, depending on the composed point defects. The presence of line defects effectively modulates the electronic properties of phosphorene, rendering the defect-containing phosphorene either metallic or semiconducting with a tunable band gap. Of particular interest is the fact that the SV-based line defect can behave as a metallic wire, suggesting a possibility to fabricate a circuit with subnanometer widths in the semiconducting phosphorene for nanoscale electronic application.

Influence of defects on the thermal conductivity of compressed LiF

Science.gov (United States)

Jones, R. E.; Ward, D. K.

2018-02-01

Defect formation in LiF, which is used as an observation window in ramp and shock experiments, has significant effects on its transmission properties. Given the extreme conditions of the experiments it is hard to measure the change in transmission directly. Using molecular dynamics, we estimate the change in conductivity as a function of the concentration of likely point and extended defects using a Green-Kubo technique with careful treatment of size effects. With this data, we form a model of the mean behavior and its estimated error; then, we use this model to predict the conductivity of a large sample of defective LiF resulting from a direct simulation of ramp compression as a demonstration of the accuracy of its predictions. Given estimates of defect densities in a LiF window used in an experiment, the model can be used to correct the observations of thermal energy through the window. In addition, the methodology we develop is extensible to modeling, with quantified uncertainty, the effects of a variety of defects on the thermal conductivity of solid materials.

Production of freely-migrating defects during irradiation

International Nuclear Information System (INIS)

Rehn, L.E.; Okamoto, P.R.

1986-09-01

During irradiation at elevated temperatures, vacancy and interstitial defects that escape can produce several different types of microstructural changes. Hence the production rate of freely-migrating defects must be known as a function of irradiating particle species and energy before quantitative correlations can be made between microstructural changes. Our fundamental knowledge of freely-migrating defect production has increased substantially in recent years. Critical experimental findings that led to the improved understanding are reviewed in this paper. A strong similarity is found for the dependence of freely-migrating defect production on primary recoil energy as measured in a variety of metals and alloys by different authors. The efficiency for producing freely-migrating defects decreases much more strongly with increasing primary recoil energy than does the efficiency for creating stable defects at liquid helium temperatures. The stronger decrease can be understood in terms of additional intracascade recombination that results from the nonrandom distribution of defects existing in the primary damage state for high primary recoil energies. Although the existing data base is limited to fcc materials, the strong similarity in the reported investigations suggests that the same dependence of freely-migrating defect production on primary recoil energy may be characteristic of a wide variety of other alloy systems as well. 52 refs., 4 figs

Socio-economic background and prevalence of visual defects ...

African Journals Online (AJOL)

The thrust of this study is to examine the socio-economic background and prevalence of visual defects among students in public and private secondary schools in Calabar municipality in Cross River State. The main objective of the study is to screen for and present information on the prevalence of visual defects amongst the ...

Simulating Interface Growth and Defect Generation in CZT – Simulation State of the Art and Known Gaps

Energy Technology Data Exchange (ETDEWEB)

Henager, Charles H. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Gao, Fei [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Hu, Shenyang Y. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Lin, Guang [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Bylaska, Eric J. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Zabaras, Nicholas [Cornell Univ., Ithaca, NY (United States)

2012-11-01

This one-year, study topic project will survey and investigate the known state-of-the-art of modeling and simulation methods suitable for performing fine-scale, fully 3-D modeling, of the growth of CZT crystals at the melt-solid interface, and correlating physical growth and post-growth conditions with generation and incorporation of defects into the solid CZT crystal. In the course of this study, this project will also identify the critical gaps in our knowledge of modeling and simulation techniques in terms of what would be needed to be developed in order to perform accurate physical simulations of defect generation in melt-grown CZT. The transformational nature of this study will be, for the first time, an investigation of modeling and simulation methods for describing microstructural evolution during crystal growth and the identification of the critical gaps in our knowledge of such methods, which is recognized as having tremendous scientific impacts for future model developments in a wide variety of materials science areas.

Solid-state lighting life prediction using extended Kalman filter

Energy Technology Data Exchange (ETDEWEB)

Lall, Pradeep [Auburn Univ., AL (United States); Wei, Junchao [Auburn Univ., AL (United States); Davis, Lynn [RTI International, Durham, NC (United States)

2013-07-16

Solid-state lighting (SSL) luminaires containing light emitting diodes (LEDs) have the potential of seeing excessive temperatures when being transported across country or being stored in non-climate controlled warehouses. They are also being used in outdoor applications in desert environments that see little or no humidity but will experience extremely high temperatures during the day. This makes it important to increase our understanding of what effects high temperature exposure for a prolonged period of time will have on the usability and survivability of these devices. The U.S. Department of Energy has made a long term commitment to advance the efficiency, understanding and development of solid-state lighting (SSL) and is making a strong push for the acceptance and use of SSL products to reduce overall energy consumption attributable to lighting. Traditional light sources “burn out” at end-of-life. For an incandescent bulb, the lamp life is defined by B50 life. However, the LEDs have no filament to “burn”. The LEDs continually degrade and the light output decreases eventually below useful levels causing failure. Presently, the TM-21 test standard is used to predict the L70 life of SSL Luminaires from LM-80 test data. The TM-21 model uses an Arrhenius Equation with an Activation Energy, Pre-decay factor and Decay Rates. Several failure mechanisms may be active in a luminaire at a single time causing lumen depreciation. The underlying TM-21 Arrhenius Model may not capture the failure physics in presence of multiple failure mechanisms. Correlation of lumen maintenance with underlying physics of degradation at system-level is needed. In this paper, a Kalman Filter and Extended Kalman Filters have been used to develop a 70% Lumen Maintenance Life Prediction Model for a LEDs used in SSL luminaires. This model can be used to calculate acceleration factors, evaluate failure-probability and identify ALT methodologies for reducing test time. Ten-thousand hour LM

Reverse Abdominoplasty Flap in Reconstruction of Post-Bilateral Mastectomies Anterior Chest Wall Defect

Directory of Open Access Journals (Sweden)

William HC Tiong

2014-01-01

Full Text Available Reverse abdominoplasty was originally described for epigastric lift. Since the work by Baroudi and Huger in the 1970s, it has become clear that reverse abdominoplasty application can be extended beyond just aesthetic procedure. Through the knowledge of anterior abdominal wall vascularity, its application had included reconstructive prospect in the coverage of various chest wall defects. To date, reverse abdominoplasty flap has been used to reconstruct unilateral anterior chest wall defect or for larger defect but only in combination with other reconstructive techniques. Here, we presented a case where it is used as a standalone flap to reconstruct bilateral anterior chest wall soft tissue defect post-bilateral mastectomies in oncological resection. In conclusion, reverse abdominoplasty flap provided us with a simple, faster, and satisfactory reconstructive outcome.

Extended state observer based fuzzy model predictive control for ultra-supercritical boiler-turbine unit

International Nuclear Information System (INIS)

Zhang, Fan; Wu, Xiao; Shen, Jiong

2017-01-01

Highlights: • A novel ESOFMPC is proposed based on the combination of ESO and stable MPC. • The improved ESO can overcome unknown disturbances on any channel of MIMO system. • Nonlinearity and disturbance of boiler-turbine unit can be handled simultaneously. - Abstract: The regulation of ultra-supercritical (USC) boiler-turbine unit in large-scale power plants is vulnerable to various unknown disturbances, meanwhile, the internal nonlinearity makes it a challenging task for wide range load tracking. To overcome these two issues simultaneously, an extended state observer based fuzzy model predictive control is proposed for the USC boiler-turbine unit. Firstly, the fuzzy model of a 1000-MW coal-fired USC boiler-turbine unit is established through the nonlinearity analysis. Then a fuzzy stable model predictive controller is devised on the fuzzy model using output cost function for the purpose of wide range load tracking. An improved linear extended state observer, which can estimate plant behavior variations and unknown disturbances regardless of the direct feedthrough characteristic of the system, is synthesized with the predictive controller to enhance its disturbance rejection property. Closed-loop stability of the overall control system is guaranteed. Simulation results on a 1000-MW USC boiler-turbine unit model demonstrate the effectiveness of the proposed approach.

VV and VO2 defects in silicon studied with hybrid density functional theory

KAUST Repository

Christopoulos, Stavros Richard G

2014-12-07

The formation of VO (A-center), VV and VO2 defects in irradiated Czochralski-grown silicon (Si) is of technological importance. Recent theoretical studies have examined the formation and charge states of the A-center in detail. Here we use density functional theory employing hybrid functionals to analyze the formation of VV and VO2 defects. The formation energy as a function of the Fermi energy is calculated for all possible charge states. For the VV and VO2 defects double negatively charged and neutral states dominate, respectively.

Superexcited states of molecules

International Nuclear Information System (INIS)

Nakamura, Hiroki; Takagi, Hidekazu.

1990-01-01

The report addresses the nature and major features of molecule's superexcited states, focusing on their involvement in dynamic processes. It also outlines the quantum defect theory which allows various processes involving these states to be treated in a unified way. The Rydberg state has close relation with an ionized state with a positive energy. The quantum defect theory interprets such relation. Specifically, the report first describes the quantum defect theory focusing on its basic principle. The multi-channel quantum defect theory is then outlined centering on how to describe a Rydberg-type superexcited state. Description of a dissociative double-electron excited state is also discussed. The quantum defect theory is based on the fact that the physics of the motion of a Rydberg electron vary with the region in the electron's coordinate space. Finally, various molecular processes that involve a superexcited state are addressed focusing on autoionization, photoionization, dissociative recombination and bonding ionization of diatomic molecules. (N.K.)

Critical current, pinning and resistive state of superconducting single-crystal niobium with different types of defect structure

International Nuclear Information System (INIS)

Sokolenko, V.I.; Starodubov, Ya.D.

2005-01-01

Critical current pinning and resistive state of single crystal niobium of texture orientation are studied for different structural states obtained by rolling at 20 K by 42% and polishing the surface layers. It is found that the heterogeneous structures typical of the strained sample even after its thinning down to approx 10% display a lower current-carrying capability due to an increase of the thermomagnetic instability within the fragmented structure sections in the near-surface layers. For a homogeneous defect structure of the sample core with the density of equilibrium distributed dislocations of 1.3 centre dot 10 11 cm -2 , a correlation between the normal current density and the critical current density in the resistive state is found, in agreement with the concepts of flux creep due to the scatter of local values of J c

Increasing reticle inspection efficiency and reducing wafer print-checks using automated defect classification and simulation

Science.gov (United States)

Ryu, Sung Jae; Lim, Sung Taek; Vacca, Anthony; Fiekowsky, Peter; Fiekowsky, Dan

2013-09-01

IC fabs inspect critical masks on a regular basis to ensure high wafer yields. These requalification inspections are costly for many reasons including the capital equipment, system maintenance, and labor costs. In addition, masks typically remain in the "requal" phase for extended, non-productive periods of time. The overall "requal" cycle time in which reticles remain non-productive is challenging to control. Shipping schedules can slip when wafer lots are put on hold until the master critical layer reticle is returned to production. Unfortunately, substituting backup critical layer reticles can significantly reduce an otherwise tightly controlled process window adversely affecting wafer yields. One major requal cycle time component is the disposition process of mask inspections containing hundreds of defects. Not only is precious non-productive time extended by reviewing hundreds of potentially yield-limiting detections, each additional classification increases the risk of manual review techniques accidentally passing real yield limiting defects. Even assuming all defects of interest are flagged by operators, how can any person's judgment be confident regarding lithographic impact of such defects? The time reticles spend away from scanners combined with potential yield loss due to lithographic uncertainty presents significant cycle time loss and increased production costs. Fortunately, a software program has been developed which automates defect classification with simulated printability measurement greatly reducing requal cycle time and improving overall disposition accuracy. This product, called ADAS (Auto Defect Analysis System), has been tested in both engineering and high-volume production environments with very successful results. In this paper, data is presented supporting significant reduction for costly wafer print checks, improved inspection area productivity, and minimized risk of misclassified yield limiting defects.

Stochastic annealing simulations of defect interactions among subcascades

Energy Technology Data Exchange (ETDEWEB)

Heinisch, H.L. [Pacific Northwest National Lab., Richland, WA (United States); Singh, B.N.

1997-04-01

The effects of the subcascade structure of high energy cascades on the temperature dependencies of annihilation, clustering and free defect production are investigated. The subcascade structure is simulated by closely spaced groups of lower energy MD cascades. The simulation results illustrate the strong influence of the defect configuration existing in the primary damage state on subsequent intracascade evolution. Other significant factors affecting the evolution of the defect distribution are the large differences in mobility and stability of vacancy and interstitial defects and the rapid one-dimensional diffusion of small, glissile interstitial loops produced directly in cascades. Annealing simulations are also performed on high-energy, subcascade-producing cascades generated with the binary collision approximation and calibrated to MD results.

An Inherited Platelet Function Defect in Basset Hounds

Science.gov (United States)

Johnstone, I. B.; Lotz, F.

1979-01-01

An inherited platelet function defect occurring in a family of basset hounds has been described. The trait is transmitted as an autosomal characteristic and appears to be expressed clinically only in the homozygous state. The characteristics of this platelet defect include: 1) marked bleeding tendencies and prolonged skin bleeding times in either male or female dogs. 2) normal blood coagulation mechanism. 3) adequate numbers of circulating platelets which appear morphologically normal by light microscopy. 4) normal whole blood clot retraction. 5) deficient in vivo platelet consumption and in vitro platelet retention in glass bead columns. 6) defective ADP-induced platelet aggregation in homozygotes, apparently normal ADP response in heterozygotes, and defective collagen-induced platelet aggregation in both. PMID:509382

Point defects and diffusion in alloys: correlation effects

International Nuclear Information System (INIS)

Barbe, Vincent

2006-01-01

Kinetic models in alloys aim at predicting the transport properties of a system starting from the microscopic jump frequencies of defects. Such properties are of prior importance in systems which stay out of equilibrium for a long time, as for example irradiated alloys in nuclear reactors. We hereby propose several developments of the recent self-consistent mean field (SCMF) kinetic theory, which deals particularly with the correlation effects due to the coupling of atomic and defect fluxes. They are taken into account through a non-equilibrium distribution function of the system, which is derived from the time evolution of small clusters (of two or more atoms or defects). We therefore introduce a set of 'dynamic' interactions called effective Hamiltonian. The SCMF theory is extended to treat high jump frequency ratios for the vacancy mechanism, as well as the transport through interstitial defects. We use in both cases an atomic model which accounts for the thermodynamic properties of the alloy, as e.g. the short-range order. Those models are eventually applied to predict the diffusion properties in two model alloys of nuclear interest: the concentrated Fe-Ni-Cr solid solution and the dilute Fe(P) alloy. We present adapted atomic models and compare our predictions to experimental data. (author)

Effect of strong disorder on three-dimensional chiral topological insulators: Phase diagrams, maps of the bulk invariant, and existence of topological extended bulk states

Science.gov (United States)

Song, Juntao; Fine, Carolyn; Prodan, Emil

2014-11-01

The effect of strong disorder on chiral-symmetric three-dimensional lattice models is investigated via analytical and numerical methods. The phase diagrams of the models are computed using the noncommutative winding number, as functions of disorder strength and model's parameters. The localized/delocalized characteristic of the quantum states is probed with level statistics analysis. Our study reconfirms the accurate quantization of the noncommutative winding number in the presence of strong disorder, and its effectiveness as a numerical tool. Extended bulk states are detected above and below the Fermi level, which are observed to undergo the so-called "levitation and pair annihilation" process when the system is driven through a topological transition. This suggests that the bulk invariant is carried by these extended states, in stark contrast with the one-dimensional case where the extended states are completely absent and the bulk invariant is carried by the localized states.

Enhancing native defect sensitivity for EUV actinic blank inspection: optimized pupil engineering and photon noise study

Science.gov (United States)

Wang, Yow-Gwo; Neureuther, Andrew; Naulleau, Patrick

2016-03-01

In this paper, we discuss the impact of optimized pupil engineering and photon noise on native defect sensitivity in EUV actinic blank inspection. Native defects include phase-dominated defects, absorber defects, and defects with a combination of phase and absorption behavior. First, we extend the idea of the Zernike phase contrast (ZPC) method and study the impact of optimum phase shift in the pupil plane on native defect sensitivity, showing a 23% signal-to-noise ratio (SNR) enhancement compare to bright field (BF) for a phase defect with 20% absorption. We also describe the possibility to increase target defect SNR on target defect sizes at the price of losing the sensitivity on smaller (non-critical) defects. Moreover, we show the advantage of the optimized phase contrast (OZPC) method over BF EUV actinic blank inspection. A single focus scan from OZPC has better inspection efficiency over BF. Second, we make a detailed comparison between the phase contrast with apodization (AZPC) method and dark field (DF) method based on defect sensitivity in the presence of both photon shot noise and camera noise. Performance is compared for a variety of photon levels, mask roughness conditions, and combinations of defect phase and absorption.

Closing the Wedge: Search Strategies for Extended Higgs Sectors with Heavy Flavor Final States

CERN Document Server

Gori, Stefania; Shah, Nausheen R.; Zurek, Kathryn M.

2016-01-01

We consider search strategies for an extended Higgs sector at the high-luminosity LHC14 utilizing multi-top final states. In the framework of a Two Higgs Doublet Model, the purely top final states ($t\\bar t, \\, 4t$) are important channels for heavy Higgs bosons with masses in the wedge above $2\\,m_t$ and at low values of $\\tan\\beta$, while a $2 b 2t$ final state is most relevant at moderate values of $\\tan \\beta$. We find, in the $t\\bar t H$ channel, with $H \\rightarrow t \\bar t$, that both single and 3 lepton final states can provide statistically significant constraints at low values of $\\tan \\beta$ for $m_A$ as high as $\\sim 750$ GeV. When systematics on the $t \\bar t$ background are taken into account, however, the 3 lepton final state is more powerful, though the precise constraint depends fairly sensitively on lepton fake rates. We also find that neither $2b2t$ nor $t \\bar t$ final states provide constraints on additional heavy Higgs bosons with couplings to tops smaller than the top Yukawa due to expec...

75 FR 34200 - Notice of Proposal To Extend the Agreement Between the Government of the United States of America...

Science.gov (United States)

2010-06-16

... Secretary for Public Diplomacy and Public Affairs, and pursuant to the requirement under 19 U.S.C. 2602(f)(1..., Under Secretary, Public Diplomacy and Public Affairs, Department of State. [FR Doc. 2010-14502 Filed 6... DEPARTMENT OF STATE [Public Notice: 7050] Notice of Proposal To Extend the Agreement Between the...

Ionization-induced rearrangement of defects in silicon

International Nuclear Information System (INIS)

Vinetskij, V.L.; Manojlo, M.A.; Matvijchuk, A.S.; Strikha, V.I.; Kholodar', G.A.

1988-01-01

Ionizing factor effect on defect rearrangement in silicon including centers with deep local electron levels in the p-n-transition region is considered. Deep center parameters were determined using non-steady-state capacity spectroscopy of deep levels (NCDLS) method. NCDLS spectrum measurement was performed using source p + -n - diodes and after their irradiation with 15 keV energy electrons or laser pulses. It is ascertained that in silicon samples containing point defect clusters defect rearrangement under ionizing factor effect takes place, i.e. deep level spectra are changed. This mechanism is efficient in case of silicon irradiation with subthreshold energy photons and electrons and can cause degradation of silicon semiconducting structures

Electronic and magnetic properties of MoS2 nanoribbons with sulfur line vacancy defects

International Nuclear Information System (INIS)

Han, Yang; Zhou, Jian; Dong, Jinming

2015-01-01

Highlights: • We performed DFT calculations on Sulfur line defects embedded MoS 2 . • The defects induced bond strains are larger in the zigzag (ZZ) edge ones. • The ZZ ones are metals, having two degenerate ground states FM and AFM. • The armchair ones are nonmagnetic semiconductors. • The defects can induce some defect states in the electronic structures. - Abstract: Motivated by the recent experimental result that single sulfur vacancies in monolayer MoS 2 are mobile under the electron beam and easily agglomerate into the sulfur line vacancy defects [Physical Review B 88, 035301(2013)] , the structural, electronic and magnetic properties of one dimensional zigzag (ZZ) and armchair (AC) edge MoS 2 nanoribbons with single or double staggered sulfur line vacancy defects (hereafter, abbreviated as SV or DV, respectively), parallel to their edges, have been investigated systematically by density functional theory calculations. It is very interesting to find that the bond strains induced by the sulfur line vacancy defect can cause a much larger out-of plane distortions in the ZZ edge MoS 2 nanoribbon than in the AC edge counterpart. Besides, the defective ZZ edge MoS 2 nanoribbons with SV or DV are both metals, having their two respective degenerate ground states with the same energy, among which one is ferromagnetic (FM “ + +”) and the other is antiferromagnetic (AFM “ + −”). But the AC edge MoS 2 nanoribbons with SV or DV are both nonmagnetic semiconductors, having very different gap values. Finally, the sulfur line vacancy defects would induce some defect states in the electronic structures of the defective MoS 2 nanoribbons. All these important results could provide a new route of tuning the electronic properties of MoS 2 nanoribbons and its derivatives for their promising applications in nanoelectronics and optoelectronics

Extended Hair-bearing Lateral Orbital Flap for Simultaneous Reconstruction of Eyebrow and Eyelid

Directory of Open Access Journals (Sweden)

Shinji Matsuo, MD

2014-02-01

Conclusions: The procedure for raising an extended hair-bearing lateral orbital flap is relatively easy, although attention must be paid to the temporal facial nerve. This flap is useful for simultaneously reconstructing defects of the upper eyelid and lateral eyebrow.

Ab initio simulation study of defect assisted Zener tunneling in GaAs diode

Science.gov (United States)

Lu, Juan; Fan, Zhi-Qiang; Gong, Jian; Jiang, Xiang-Wei

2017-06-01

The band to band tunneling of defective GaAs nano-junction is studied by using the non-equilibrium Green's function formalism with density functional theory. Aiming at performance improvement, two types of defect-induced transport behaviors are reported in this work. By examining the partial density of states of the system, we find the substitutional defect OAs that locates in the middle of tunneling region will introduce band-gap states, which can be used as stepping stones to increase the tunneling current nearly 3 times higher at large bias voltage (Vb≥0.3V). Another type of defects SeAs and VGa (Ga vacancy) create donor and acceptor states at the edge of conduction band (CB) and valence band (VB)respectively, which can change the band bending of the junction as well as increase the tunneling field obtaining a 1.5 times higher ON current. This provides an effective defect engineering approach for next generation TFET device design.

The excited J = 01 Σu+ levels of D2: Measurements and ab initio quantum defect study

Science.gov (United States)

Glass-Maujean, M.; Jungen, Ch.; Dickenson, G. D.; de Oliveira, N.; Ubachs, W.

2016-02-01

The DESIRS beamline of the SOLEIL synchrotron facility, equipped with a vacuum ultraviolet Fourier-transform spectrometer has been used to measure P (N″ = 1) (N -N″ = - 1) absorption transitions of the D2 molecule. Some 44 P-lines were assigned and their transition frequencies determined up to excitation energies of 134,000 cm-1 above the ground state, thereby extending the earlier work by various authors, and considerably improving the spectral accuracy (<0.1 cm-1). The assignments have been aided by first principles multichannel quantum defect theory (MQDT) calculations. These calculations also provide predictions of the autoionization widths of the upper levels which agree well with the observed resonance widths.

Investigation of defect equilibria in YBa2Cu3Ox by a solid state electrochemical method

International Nuclear Information System (INIS)

Porat, O.; Riess, I.; Tuller, H.L.

1992-01-01

The partial pressure of oxygen, P(O 2 ), in equilibrium with YBa 2 Cu 3 O x was determined as a function of oxygen composition, x, and temperature, T in the range 6.35>x>5.97 and 1120>T>825 K. A solid state electrochemical method was used allowing for accurate control of composition by Coulometric titration and determination of P(O 2 ) by open circuit EMF measurements. Decomposition of YBa 2 Cu 3 O x was found to occur at x values as high as 6.1. Evidence for additional possible phase transitions for x>6.1 are discussed. Three relevant defect models are considered in detail and fitted to these and other data. The outcome of this analysis is a model that is consistent with all the available data and assumes that the dominant defects are neutral oxygen interstitials, O i * and that the concentration of charged defects is small compared to [O i * ]. The hole concentration, p, follows a P(O 2 ) 1/2 dependence over a significant range of x. The relative change in the position of the Fermi energy upon reduction from x=6.35 to x=6.1 is 0.2 eV. The partial molar enthalpy of oxygen in YBa 2 Cu 3 O 6.1 with respect to pure oxygen is 179 kJ/mol. It is suggested that the chemical and tracer diffusion coefficient are independent of the diffusivity determined from conductivity. Information concerning the thermodynamic factor and the enthalpy of oxidation is presented. (orig.)

Stability and kinetics of point defects in SiO2 and in SiC

International Nuclear Information System (INIS)

Roma, G.

2012-01-01

This document is conceived as an overview of Guido Roma's research achievements on defects stability and kinetics in two materials of interest in nuclear science and for many other application domains: silicon dioxide and silicon carbide. An extended summary in french is followed by the main document, in english. Chapter 1 describes the context, introduces the approach and explains the choice of silicon dioxide and silicon carbide. Chapter 2 discusses several approximations and specific issues of the application of Density Functional Theory to point defects in non-metallic materials for the study of defects energetics and diffusion. Chapter 3 is devoted to native defects in silicon dioxide and the understanding of self-diffusion in crystalline and amorphous SiO 2 . Chapter 4 summarises the results on native defects and palladium impurities in silicon carbide. A conclusion, including suggestions for future developments, closes the main part of the document. (author) [fr

Reconstruction of Defects After Fournier Gangrene: A Systematic Review.

Science.gov (United States)

Karian, Laurel S; Chung, Stella Y; Lee, Edward S

2015-01-01

Reconstruction of scrotal defects after Fournier gangrene is often achieved with skin grafts or flaps, but there is no general consensus on the best method of reconstruction or how to approach the exposed testicle. We systematically reviewed the literature addressing methods of reconstruction of Fournier defects after debridement. PubMed and Cochrane databases were searched from 1950 to 2013. Inclusion criteria were reconstruction for Fournier defects, patients 18 to 90 years old, and reconstructive complication rates reported as whole numbers or percentages. Exclusion criteria were studies focused on methods of debridement or other phases of care rather than reconstruction, studies with fewer than 5 male patients with Fournier defects, literature reviews, and articles not in English. The initial search yielded 982 studies, which was refined to 16 studies with a total pool of 425 patients. There were 25 (5.9%) patients with defects that healed by secondary intention, 44 (10.4%) with delayed primary closure, 36 (8.5%) with implantation of the testicle in a medial thigh pocket, 6 (1.4%) with loose wound approximation, 96 (22.6%) with skin grafts, 68 (16.0%) with scrotal advancement flaps, 128 (30.1%) with flaps, and 22 (5.2%) with flaps or skin grafts in combination with tissue adhesives. Four outcomes were evaluated: number of patients, defect size, method of reconstruction, and wound-healing complications. Most reconstructive techniques provide reliable coverage and protection of testicular function with an acceptable cosmetic result. There is no conclusive evidence to support flap coverage of exposed testes rather than skin graft. A reconstructive algorithm is proposed. Skin grafting or flap reconstruction is recommended for defects larger than 50% of the scrotum or extending beyond the scrotum, whereas scrotal advancement flap reconstruction or healing by secondary intention is best for defects confined to less than 50% of the scrotum that cannot be closed

Behavior of deep level defects on voltage-induced stress of Cu(In,Ga)Se{sub 2} solar cells

Energy Technology Data Exchange (ETDEWEB)

Lee, D.W.; Cho, S.E. [Department of Physics and Semiconductor Science, Dongguk University, Seoul (Korea, Republic of); Jeong, J.H. [Solar Cell Center, Korea Institute of Science and Technology, Seoul (Korea, Republic of); Cho, H.Y., E-mail: hycho@dongguk.edu [Department of Physics and Semiconductor Science, Dongguk University, Seoul (Korea, Republic of)

2015-05-01

The behavior of deep level defects by a voltage-induced stress for CuInGaSe{sub 2} (CIGS) solar cells has been investigated. CIGS solar cells were used with standard structures which are Al-doped ZnO/i-ZnO/CdS/CIGSe{sub 2}/Mo on soda lime glass, and that resulted in conversion efficiencies as high as 16%. The samples with the same structure were isothermally stressed at 100 °C under the reverse voltages. The voltage-induced stressing in CIGS samples causes a decrease in the carrier density and conversion efficiency. To investigate the behavior of deep level defects in the stressed CIGS cells, photo-induced current transient spectroscopy was utilized, and normally 3 deep level defects (including 2 hole traps and 1 electron trap) were found to be located at 0.18 eV and 0.29 eV above the valence band maximum (and 0.36 eV below the conduction band). In voltage-induced cells, especially, it was found that the decrease of the hole carrier density could be responsible for the increase of the 0.29 eV defect, which is known to be observed in less efficient CIGS solar cells. And the carrier density and the defects are reversible at least to a large extent by resting at room-temperature without the bias voltage. From optical capture kinetics in photo-induced current transient spectroscopy measurement, the types of defects could be distinguished into the isolated point defect and the extended defect. In this work, it is suggested that the increase of the 0.29 eV defect by voltage-induced stress could be due to electrical activation accompanied by a loss of positive ion species and the activated defect gives rise to reduction of the carrier density. - Highlights: • We investigated behavior of deep level defects by voltage-induced stress. • Defect generation could affect the decrease of the conversion efficiency of cells. • Defect generation could be electrically activated by a loss of positive ion species. • Type of defects could be studied with models of point defects

Scattering of electrons in copper by a Frenkel pair defect

Energy Technology Data Exchange (ETDEWEB)

Lodder, A.; Rijsdijk, G.A.; Bukman, D.J.; Baratta, A.J.; Molenaar, J.

1988-06-01

The Korringa-Kohn-Rostoker (KKR) Green function extended-defect formalism, used to describe the scattering of Bloch electrons in a dilute alloy, is generalised to include an asymmetric defect centred on a lattice site. The revised theory is then used to investigate conduction electron scattering from Frenkel pairs in Cu. Such defects consist of two self-interstitial atoms centred on a vacant lattice site forming a dumb-bell oriented along the <100> axis. The generalised formalism allows one to calculate the cluster t matrix T for the Frenkel pair cluster including the surrounding displaced nearest neighbours. It was found that the interstitials at the vacant lattice site could still be treated within the muffin-tin potential as a central scatterer characterised by a t matrix which is non-diagonal in the angular momentum. Electron scattering rates and Dingle temperatures are calculated and discussed in view of preliminary experimental results.

Scattering of electrons in copper by a Frenkel pair defect

International Nuclear Information System (INIS)

Lodder, A.; Rijsdijk, G.A.; Bukman, D.J.; Baratta, A.J.; Molenaar, J.

1988-01-01

The Korringa-Kohn-Rostoker (KKR) Green function extended-defect formalism, used to describe the scattering of Bloch electrons in a dilute alloy, is generalised to include an asymmetric defect centred on a lattice site. The revised theory is then used to investigate conduction electron scattering from Frenkel pairs in Cu. Such defects consist of two self-interstitial atoms centred on a vacant lattice site forming a dumb-bell oriented along the axis. The generalised formalism allows one to calculate the cluster t matrix T for the Frenkel pair cluster including the surrounding displaced nearest neighbours. It was found that the interstitials at the vacant lattice site could still be treated within the muffin-tin potential as a central scatterer characterised by a t matrix which is non-diagonal in the angular momentum. Electron scattering rates and Dingle temperatures are calculated and discussed in view of preliminary experimental results. (author)

Vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association with Mayer-Rokitansky-Küster-Hauser syndrome in co-occurrence

DEFF Research Database (Denmark)

Bjørsum-Meyer, Thomas; Herlin, Morten; Qvist, Niels

2016-01-01

Background: The vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association and Mayer-Rokitansky-Küster-Hauser syndrome are rare conditions. We aimed to present two cases with the vertebral defect, anal atresia, cardiac...... defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association and Mayer-Rokitansky-Küster-Hauser co-occurrence from our local surgical center and through a systematic literature search detect published cases. Furthermore, we aimed to collect existing knowledge...... in the embryopathogenesis and genetics in order to discuss a possible link between the vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association and Mayer-Rokitansky-Küster-Hauser syndrome. Case presentation: Our first case was a white girl...

Surface defects characterization in a quantum wire by coherent phonons scattering

Energy Technology Data Exchange (ETDEWEB)

Rabia, M. S. [Laboratoire de Mécanique des Structures et Energétique, Faculté du Génie de la Construction, Université. Mammeri de Tizi-Ouzou, BP 17 RP Hasnaoua II, Tizi-Ouzou 15000, Algérie m2msr@yahoo.fr (Algeria)

2015-03-30

The influence of surface defects on the scattering properties of elastic waves in a quasi-planar crystallographic waveguide is studied in the harmonic approximation using the matching method formalism. The structural model is based on three infinite atomic chains forming a perfect lattice surmounted by an atomic surface defect. Following the Landauer approach, we solve directly the Newton dynamical equation with scattering boundary conditions and taking into account the next nearest neighbour’s interaction. A detailed study of the defect-induced fluctuations in the transmission spectra is presented for different adatom masses. As in the electronic case, the presence of localized defect-induced states leads to Fano-like resonances. In the language of mechanical vibrations, these are called continuum resonances. Numerical results reveal the intimate relation between transmission spectra and localized defect states and provide a basis for the understanding of conductance spectroscopy experiments in disordered mesoscopic systems. The results could be useful for the design of phononic devices.

Surface defects characterization in a quantum wire by coherent phonons scattering

International Nuclear Information System (INIS)

Rabia, M. S.

2015-01-01

The influence of surface defects on the scattering properties of elastic waves in a quasi-planar crystallographic waveguide is studied in the harmonic approximation using the matching method formalism. The structural model is based on three infinite atomic chains forming a perfect lattice surmounted by an atomic surface defect. Following the Landauer approach, we solve directly the Newton dynamical equation with scattering boundary conditions and taking into account the next nearest neighbour’s interaction. A detailed study of the defect-induced fluctuations in the transmission spectra is presented for different adatom masses. As in the electronic case, the presence of localized defect-induced states leads to Fano-like resonances. In the language of mechanical vibrations, these are called continuum resonances. Numerical results reveal the intimate relation between transmission spectra and localized defect states and provide a basis for the understanding of conductance spectroscopy experiments in disordered mesoscopic systems. The results could be useful for the design of phononic devices

Complex step-based low-rank extended Kalman filtering for state-parameter estimation in subsurface transport models

KAUST Repository

El Gharamti, Mohamad; Hoteit, Ibrahim

2014-01-01

The accuracy of groundwater flow and transport model predictions highly depends on our knowledge of subsurface physical parameters. Assimilation of contaminant concentration data from shallow dug wells could help improving model behavior, eventually resulting in better forecasts. In this paper, we propose a joint state-parameter estimation scheme which efficiently integrates a low-rank extended Kalman filtering technique, namely the Singular Evolutive Extended Kalman (SEEK) filter, with the prominent complex-step method (CSM). The SEEK filter avoids the prohibitive computational burden of the Extended Kalman filter by updating the forecast along the directions of error growth only, called filter correction directions. CSM is used within the SEEK filter to efficiently compute model derivatives with respect to the state and parameters along the filter correction directions. CSM is derived using complex Taylor expansion and is second order accurate. It is proven to guarantee accurate gradient computations with zero numerical round-off errors, but requires complexifying the numerical code. We perform twin-experiments to test the performance of the CSM-based SEEK for estimating the state and parameters of a subsurface contaminant transport model. We compare the efficiency and the accuracy of the proposed scheme with two standard finite difference-based SEEK filters as well as with the ensemble Kalman filter (EnKF). Assimilation results suggest that the use of the CSM in the context of the SEEK filter may provide up to 80% more accurate solutions when compared to standard finite difference schemes and is competitive with the EnKF, even providing more accurate results in certain situations. We analyze the results based on two different observation strategies. We also discuss the complexification of the numerical code and show that this could be efficiently implemented in the context of subsurface flow models. © 2013 Elsevier B.V.

Complex step-based low-rank extended Kalman filtering for state-parameter estimation in subsurface transport models

KAUST Repository

El Gharamti, Mohamad

2014-02-01

The accuracy of groundwater flow and transport model predictions highly depends on our knowledge of subsurface physical parameters. Assimilation of contaminant concentration data from shallow dug wells could help improving model behavior, eventually resulting in better forecasts. In this paper, we propose a joint state-parameter estimation scheme which efficiently integrates a low-rank extended Kalman filtering technique, namely the Singular Evolutive Extended Kalman (SEEK) filter, with the prominent complex-step method (CSM). The SEEK filter avoids the prohibitive computational burden of the Extended Kalman filter by updating the forecast along the directions of error growth only, called filter correction directions. CSM is used within the SEEK filter to efficiently compute model derivatives with respect to the state and parameters along the filter correction directions. CSM is derived using complex Taylor expansion and is second order accurate. It is proven to guarantee accurate gradient computations with zero numerical round-off errors, but requires complexifying the numerical code. We perform twin-experiments to test the performance of the CSM-based SEEK for estimating the state and parameters of a subsurface contaminant transport model. We compare the efficiency and the accuracy of the proposed scheme with two standard finite difference-based SEEK filters as well as with the ensemble Kalman filter (EnKF). Assimilation results suggest that the use of the CSM in the context of the SEEK filter may provide up to 80% more accurate solutions when compared to standard finite difference schemes and is competitive with the EnKF, even providing more accurate results in certain situations. We analyze the results based on two different observation strategies. We also discuss the complexification of the numerical code and show that this could be efficiently implemented in the context of subsurface flow models. © 2013 Elsevier B.V.

Phase Defects as a Measure of Disorder in Traveling-Wave Convection

International Nuclear Information System (INIS)

La Porta, A.; Surko, C.M.

1996-01-01

Spatiotemporal disorder is studied in traveling-wave convection in an ethanol-water mixture. A technique for calculating the complex order parameter of the pattern is described, and the identification of phase defects is demonstrated. Point defects, domain boundaries, and standing wave patterns are shown to produce unique defect structures. The transition from a disordered state to a more ordered pattern is described in terms of the dynamics of defects and their statistics. copyright 1996 The American Physical Society

Extracting software static defect models using data mining

Directory of Open Access Journals (Sweden)

Ahmed H. Yousef

2015-03-01

Full Text Available Large software projects are subject to quality risks of having defective modules that will cause failures during the software execution. Several software repositories contain source code of large projects that are composed of many modules. These software repositories include data for the software metrics of these modules and the defective state of each module. In this paper, a data mining approach is used to show the attributes that predict the defective state of software modules. Software solution architecture is proposed to convert the extracted knowledge into data mining models that can be integrated with the current software project metrics and bugs data in order to enhance the prediction. The results show better prediction capabilities when all the algorithms are combined using weighted votes. When only one individual algorithm is used, Naïve Bayes algorithm has the best results, then the Neural Network and the Decision Trees algorithms.

Scale-invariant extended inflation

International Nuclear Information System (INIS)

Holman, R.; Kolb, E.W.; Vadas, S.L.; Wang, Y.

1991-01-01

We propose a model of extended inflation which makes use of the nonlinear realization of scale invariance involving the dilaton coupled to an inflaton field whose potential admits a metastable ground state. The resulting theory resembles the Jordan-Brans-Dicke version of extended inflation. However, quantum effects, in the form of the conformal anomaly, generate a mass for the dilaton, thus allowing our model to evade the problems of the original version of extended inflation. We show that extended inflation can occur for a wide range of inflaton potentials with no fine-tuning of dimensionless parameters required. Furthermore, we also find that it is quite natural for the extended-inflation period to be followed by an epoch of slow-rollover inflation as the dilaton settles down to the minimum of its induced potential

Increasing reticle inspection efficiency and reducing wafer printchecks at 14nm using automated defect classification and simulation

Science.gov (United States)

Paracha, Shazad; Goodman, Eliot; Eynon, Benjamin G.; Noyes, Ben F.; Ha, Steven; Kim, Jong-Min; Lee, Dong-Seok; Lee, Dong-Heok; Cho, Sang-Soo; Ham, Young M.; Vacca, Anthony D.; Fiekowsky, Peter J.; Fiekowsky, Daniel I.

2014-10-01

IC fabs inspect critical masks on a regular basis to ensure high wafer yields. These requalification inspections are costly for many reasons including the capital equipment, system maintenance, and labor costs. In addition, masks typically remain in the "requal" phase for extended, non-productive periods of time. The overall "requal" cycle time in which reticles remain non-productive is challenging to control. Shipping schedules can slip when wafer lots are put on hold until the master critical layer reticle is returned to production. Unfortunately, substituting backup critical layer reticles can significantly reduce an otherwise tightly controlled process window adversely affecting wafer yields. One major requal cycle time component is the disposition process of mask inspections containing hundreds of defects. Not only is precious non-productive time extended by reviewing hundreds of potentially yield-limiting detections, each additional classification increases the risk of manual review techniques accidentally passing real yield limiting defects. Even assuming all defects of interest are flagged by operators, how can any person's judgment be confident regarding lithographic impact of such defects? The time reticles spend away from scanners combined with potential yield loss due to lithographic uncertainty presents significant cycle time loss and increased production costs An automatic defect analysis system (ADAS), which has been in fab production for numerous years, has been improved to handle the new challenges of 14nm node automate reticle defect classification by simulating each defect's printability under the intended illumination conditions. In this study, we have created programmed defects on a production 14nm node critical-layer reticle. These defects have been analyzed with lithographic simulation software and compared to the results of both AIMS optical simulation and to actual wafer prints.

Birth Defects in the Newborn Population: Race and Ethnicity

Directory of Open Access Journals (Sweden)

Alexander C. Egbe

2015-06-01

Conclusion: This is a comprehensive description of racial differences in the risk of birth defects in the United States. Observed racial differences in the risk of birth defects may be related to genetic susceptibilities, to cultural or social differences that could modify exposures, or to the many potential combinations between susceptibilities and exposures.

Generating feasible transition paths for testing from an extended finite state machine (EFSM) with the counter problem

OpenAIRE

Kalaji, AS; Hierons, RM; Swift, S

2009-01-01

The extended finite state machine (EFSM) is a powerful approach for modeling state-based systems. However, testing from EFSMs is complicated by the existence of infeasible paths. One important problem is the existence of a transition with a guard that references a counter variable whose value depends on previous transitions. The presence of such transitions in paths often leads to infeasible paths. This paper proposes a novel approach to bypass the counter problem. The proposed approach is ev...

Preferential nucleation and growth of InAs/GaAs(0 0 1) quantum dots on defected sites by droplet epitaxy

International Nuclear Information System (INIS)

Chen, Z.B.; Lei, W.; Chen, B.; Wang, Y.B.; Liao, X.Z.; Tan, H.H.; Zou, J.; Ringer, S.P.; Jagadish, C.

2013-01-01

A double-layer InAs/GaAs(0 0 1) quantum dot structure grown by droplet epitaxy was found to have V-shaped defects, with the two arms of each defect originating from a buried quantum dot and extended to the top surface. Quantum dots on the sample surface nucleated and grew preferentially on top of the arms of the V-shaped defects. The mechanism behind the observed phenomenon was discussed

Identification of biochemical features of defective Coffea arabica L. beans.

Science.gov (United States)

Casas, María I; Vaughan, Michael J; Bonello, Pierluigi; McSpadden Gardener, Brian; Grotewold, Erich; Alonso, Ana P

2017-05-01

Coffee organoleptic properties are based in part on the quality and chemical composition of coffee beans. The presence of defective beans during processing and roasting contribute to off flavors and reduce overall cup quality. A multipronged approach was undertaken to identify specific biochemical markers for defective beans. To this end, beans were split into defective and non-defective fractions and biochemically profiled in both green and roasted states. A set of 17 compounds in green beans, including organic acids, amino acids and reducing sugars; and 35 compounds in roasted beans, dominated by volatile compounds, organic acids, sugars and sugar alcohols, were sufficient to separate the defective and non-defective fractions. Unsorted coffee was examined for the presence of the biochemical markers to test their utility in detecting defective beans. Although the green coffee marker compounds were found in all fractions, three of the roasted coffee marker compounds (1-methylpyrrole, 5-methyl- 2-furfurylfuran, and 2-methylfuran) were uniquely present in defective fractions. Published by Elsevier Ltd.

Metastable defect response in CZTSSe from admittance spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Koeper, Mark J.; Hages, Charles J.; Li, Jian V.; Levi, Dean; Agrawal, Rakesh

2017-10-02

Admittance spectroscopy is a useful tool used to study defects in semiconductor materials. However, metastable defect responses in non-ideal semiconductors can greatly impact the measurement and therefore the interpretation of results. Here, admittance spectroscopy was performed on Cu2ZnSn(S,Se)4 where metastable defect response is illustrated due to the trapping of injected carriers into a deep defect state. To investigate the metastable response, admittance measurements were performed under electrically and optically relaxed conditions in comparison to a device following a low level carrier-injection pretreatment. The relaxed measurement demonstrates a single capacitance signature while two capacitance signatures are observed for the device measured following carrier-injection. The deeper level signature, typically reported for kesterites, is activated by charge trapping following carrier injection. Both signatures are attributed to bulk level defects. The significant metastable response observed on kesterites due to charge trapping obscures accurate interpretation of defect levels from admittance spectroscopy and indicates that great care must be taken when performing and interpreting this measurement on non-ideal devices.

Investigation on the effect of atomic defects on the breaking behaviors of gold nanowires

International Nuclear Information System (INIS)

Wang Fenying; Sun Wei; Wang Hongbo; Zhao Jianwei; Kiguchi, Manabu; Sun Changqing

2012-01-01

The mechanical properties and breaking behaviors of the [100]-oriented single-crystal gold nanowires containing a set of defect ratios have been studied at different temperatures using molecular dynamics simulations. The size of the nanowire is 10a × 10a × 30a (a stands for lattice constant, 0.408 nm for gold). The mechanical strengths of the nanowires decrease with the increasing temperature. However, the defects that enhance the local thermal energy have improved the nanowire mechanical strength under a wide range of temperature. Comparing to the single-crystal nanowire, the existence of the atomic defects extends the elastic deformation showing a larger yield strain. By summarizing 300 samples at each temperature, the statistical breaking position distribution shows that the nanowire breaking behavior is sensitive to the atomic defects when the defect ratio is 5 % at 100 K, whereas the ratio is 1 % when temperatures are 300 and 500 K.

Electronic and magnetic properties of MoS{sub 2} nanoribbons with sulfur line vacancy defects

Energy Technology Data Exchange (ETDEWEB)

Han, Yang [Group of Computational Condensed Matter Physics, National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Zhou, Jian [National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093 (China); Dong, Jinming, E-mail: jdong@nju.edu.cn [Group of Computational Condensed Matter Physics, National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China)

2015-08-15

Highlights: • We performed DFT calculations on Sulfur line defects embedded MoS{sub 2}. • The defects induced bond strains are larger in the zigzag (ZZ) edge ones. • The ZZ ones are metals, having two degenerate ground states FM and AFM. • The armchair ones are nonmagnetic semiconductors. • The defects can induce some defect states in the electronic structures. - Abstract: Motivated by the recent experimental result that single sulfur vacancies in monolayer MoS{sub 2} are mobile under the electron beam and easily agglomerate into the sulfur line vacancy defects [Physical Review B 88, 035301(2013)] , the structural, electronic and magnetic properties of one dimensional zigzag (ZZ) and armchair (AC) edge MoS{sub 2} nanoribbons with single or double staggered sulfur line vacancy defects (hereafter, abbreviated as SV or DV, respectively), parallel to their edges, have been investigated systematically by density functional theory calculations. It is very interesting to find that the bond strains induced by the sulfur line vacancy defect can cause a much larger out-of plane distortions in the ZZ edge MoS{sub 2} nanoribbon than in the AC edge counterpart. Besides, the defective ZZ edge MoS{sub 2} nanoribbons with SV or DV are both metals, having their two respective degenerate ground states with the same energy, among which one is ferromagnetic (FM “ + +”) and the other is antiferromagnetic (AFM “ + −”). But the AC edge MoS{sub 2} nanoribbons with SV or DV are both nonmagnetic semiconductors, having very different gap values. Finally, the sulfur line vacancy defects would induce some defect states in the electronic structures of the defective MoS{sub 2} nanoribbons. All these important results could provide a new route of tuning the electronic properties of MoS{sub 2} nanoribbons and its derivatives for their promising applications in nanoelectronics and optoelectronics.

Role of defects on the electronic and magnetic properties of CrAs, CrSe and CrSb zinc-blende compounds

International Nuclear Information System (INIS)

Galanakis, I.; Pouliasis, S.G.

2009-01-01

We present an extended study of single impurity atoms and atomic swaps in half-metallic CrAs, CrSb and CrSe zinc-blende compounds. Although the perfect alloys present a rather large gap in the minority-spin band, all defects under study, with the exception of void impurities at Cr and sp sites and Cr impurities at sp sites (as long as no swap occurs), induce new states within the gap. The Fermi level can be pinned within these new minority states depending on the lattice constant used for the calculations and the electronegativity of the sp atoms. Although these impurity states are localized in space around the impurity atoms and very fast we regain the bulk behavior, their interaction can lead to wide bands within the gap and thus loss of the half-metallic character

High energy ion irradiated III-N semiconductors (AlN, GaN, InN): study of point defect and extended defect creation

International Nuclear Information System (INIS)

Sall, Mamour

2013-01-01

Nitride semiconductors III N (AlN, GaN, InN) have interesting properties for micro-and opto-electronic applications. In use, they may be subjected to different types of radiation in a wide range of energy. In AlN, initially considered insensitive to electronic excitations (Se), we have demonstrated a novel type of synergy between Se and nuclear collisions (Sn) for the creation of defects absorbing at 4.7 eV. In addition, another effect of Se is highlighted in AlN: climb of screw dislocations under the influence of Se, at high fluence. In GaN, two mechanisms can explain the creation of defects absorbing at 2.8 eV: a synergy between Se and Sn, or a creation only due to Sn but with a strong effect of the size of displacement cascades. The study, by TEM, of the effects of Se in the three materials, exhibits behaviors highly dependent on the material while they all belong to the same family with the same atomic structure. Under monoatomic ion irradiations (velocity between 0.4 and 5 MeV/u), while discontinuous tracks are observed in GaN and InN, no track is observed in AlN with the highest electronic stopping power (33 keV/nm). Only fullerene clusters produce tracks in AlN. The inelastic thermal spike model was used to calculate the energies required to produce track in AlN, GaN and InN, they are 4.2 eV/atom, 1.5 eV/atom and 0.8 eV/atom, respectively. This sensitivity difference according to Se, also occurs at high fluence. (author)

Gap States at Low-Angle Grain Boundaries in Monolayer Tungsten Diselenide

KAUST Repository

Huang, Yu Li

2016-05-03

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have revealed many novel properties of interest to future device applications. In particular, the presence of grain boundaries (GBs) can significantly influence the material properties of 2D TMDs. However, direct characterization of the electronic properties of the GB defects at the atomic scale remains extremely challenging. In this study, we employ scanning tunneling microscopy and spectroscopy to investigate the atomic and electronic structure of low-angle GBs of monolayer tungsten diselenide (WSe2) with misorientation angles of 3-6°. Butterfly features are observed along the GBs, with the periodicity depending on the misorientation angle. Density functional theory calculations show that these butterfly features correspond to gap states that arise in tetragonal dislocation cores and extend to distorted six-membered rings around the dislocation core. Understanding the nature of GB defects and their influence on transport and other device properties highlights the importance of defect engineering in future 2D device fabrication. © 2016 American Chemical Society.

Gap States at Low-Angle Grain Boundaries in Monolayer Tungsten Diselenide

KAUST Repository

Huang, Yu Li; Ding, Zijing; Zhang, Wenjing; Chang, Yung-Huang; Shi, Yumeng; Li, Lain-Jong; Song, Zhibo; Zheng, Yu Jie; Chi, Dongzhi; Quek, Su Ying; Wee, Andrew T. S.

2016-01-01

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have revealed many novel properties of interest to future device applications. In particular, the presence of grain boundaries (GBs) can significantly influence the material properties of 2D TMDs. However, direct characterization of the electronic properties of the GB defects at the atomic scale remains extremely challenging. In this study, we employ scanning tunneling microscopy and spectroscopy to investigate the atomic and electronic structure of low-angle GBs of monolayer tungsten diselenide (WSe2) with misorientation angles of 3-6°. Butterfly features are observed along the GBs, with the periodicity depending on the misorientation angle. Density functional theory calculations show that these butterfly features correspond to gap states that arise in tetragonal dislocation cores and extend to distorted six-membered rings around the dislocation core. Understanding the nature of GB defects and their influence on transport and other device properties highlights the importance of defect engineering in future 2D device fabrication. © 2016 American Chemical Society.

Structural defects in monocrystalline silicon: from radiation ones to growing and technological

International Nuclear Information System (INIS)

Gerasimenko, N.N.; Pavlyuchenko, M.N.; Dzhamanbalin, K.K.

2001-01-01

The systematical review of properties and conditions of radiation structures in monocrystalline silicon including own defects (elementary and complex, disordered fields) as well as defect-impurity formations is presented. The most typical examples of principle effects influence of known defects on radiation-induced processes (phase transformations, diffusion and heteration and others are considered. Experimental facts and models of silicon radiation amorphization have been analyzed in comparison of state of the radiation amorphization radiation problem of metals and alloys. The up-to-date status of the problem of the radiation defects physics are discussed, including end-of-range -, n+-, rod-like- defects. The phenomenon self-organization in crystals with defects has been considered. The examples of directed using radiation defects merged in independent trend - defects engineering - are given

Quantifying defects in N-layer graphene via a phenomenological model of Raman spectroscopy

International Nuclear Information System (INIS)

Giro, Ronaldo; Archanjo, Braulio S.; Martins Ferreira, Erlon H.; Capaz, Rodrigo B.; Jorio, Ado; Achete, Carlos A.

2014-01-01

We construct a model to obtain the density of point defects in N-layer graphene by combining Raman spectroscopy and the TRIM (Transport Range of Ions in Matter) simulation package. The model relates the intensity (or area) ratio of graphene’s D and G bands to the defect density on each layer due to Ar + bombardment. Our method is effective for ion fluences ranging from 10 11 to ∼10 14 Ar + /cm −2 and it should be in principle extendable to any kind of ion and energy

Quantifying defects in N-layer graphene via a phenomenological model of Raman spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Giro, Ronaldo, E-mail: rgiro@br.ibm.com [Divisão de Metrologia de Materiais, Instituto Nacional de Metrologia, Qualidade e Tecnologia (Inmetro), Duque de Caxias, RJ 25250-020 (Brazil); Archanjo, Braulio S.; Martins Ferreira, Erlon H. [Divisão de Metrologia de Materiais, Instituto Nacional de Metrologia, Qualidade e Tecnologia (Inmetro), Duque de Caxias, RJ 25250-020 (Brazil); Capaz, Rodrigo B. [Divisão de Metrologia de Materiais, Instituto Nacional de Metrologia, Qualidade e Tecnologia (Inmetro), Duque de Caxias, RJ 25250-020 (Brazil); Instituto de Física, Universidade Federal do Rio de Janeiro, Caixa Postal 68528, Rio de Janeiro, RJ 21941-972 (Brazil); Jorio, Ado [Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, MG 30123-970 (Brazil); Achete, Carlos A. [Divisão de Metrologia de Materiais, Instituto Nacional de Metrologia, Qualidade e Tecnologia (Inmetro), Duque de Caxias, RJ 25250-020 (Brazil); Departamento de Engenharia Metalúrgica e de Materiais, Universidade Federal do Rio de Janeiro, Caixa Postal 68505, Rio de Janeiro, RJ 21945-970 (Brazil)

2014-01-15

We construct a model to obtain the density of point defects in N-layer graphene by combining Raman spectroscopy and the TRIM (Transport Range of Ions in Matter) simulation package. The model relates the intensity (or area) ratio of graphene’s D and G bands to the defect density on each layer due to Ar{sup +} bombardment. Our method is effective for ion fluences ranging from 10{sup 11} to ∼10{sup 14} Ar{sup +}/cm{sup −2} and it should be in principle extendable to any kind of ion and energy.

Defect States in InP/InGaAs/InP Heterostructures by Current-Voltage Characteristics and Deep Level Transient Spectroscopy.

Science.gov (United States)

Vu, Thi Kim Oanh; Lee, Kyoung Su; Lee, Sang Jun; Kim, Eun Kyu

2018-09-01

We studied defect states in In0.53Ga0.47As/InP heterojunctions with interface control by group V atoms during metalorganic chemical vapor (MOCVD) deposition. From deep level transient spectroscopy (DLTS) measurements, two defects with activation energies of 0.28 eV (E1) and 0.15 eV (E2) below the conduction band edge, were observed. The defect density of E1 for In0.53Ga0.47As/InP heterojunctions with an addition of As and P atoms was about 1.5 times higher than that of the heterojunction added P atom only. From the temperature dependence of current- voltage characteristics, the thermal activation energies of In0.53Ga0.47As/InP of heterojunctions were estimated to be 0.27 and 0.25 eV, respectively. It appeared that the reverse light current for In0.53Ga0.47As/InP heterojunction added P atom increased only by illumination of a 940 nm-LED light source. These results imply that only the P addition at the interface can enhance the quality of InGaAs/InP heterojunction.

On the meaning of sink capture efficiency and sink strength for point defects

International Nuclear Information System (INIS)

Mansur, L.K.; Wolfer, W.G.

1982-01-01

The concepts of sink capture efficiency and sink strength for point defects are central to the theory of point defect reactions in materials undergoing irradiation. Two fundamentally different definitions of the capture efficiency are in current use. The essential difference can be stated simply. The conventional meaning denotes a measure of the loss rate of point defects to sinks per unit mean point defect concentration. A second definition of capture efficiency, introduced recently, gives a measure of the point defect loss rate without normalization to the mean point defect concentration. The relationship between the two capture efficiencies is here derived. By stating the relationship we hope to eliminate confusion caused by comparisons of the two types of capture efficiencies at face value and to provide a method of obtaining one from the other. Internally consistent usage of either of the capture efficiencies leads to the same results for the calculation of measuable quantities, as is required physically. (orig.)

International conference on defects in insulating crystals

International Nuclear Information System (INIS)

1977-01-01

Short summaries of conference papers are presented. Some of the conference topics included transport properties, defect levels, superionic conductors, radiation effects, John-Teller effect, electron-lattice interactions, and relaxed excited states

Characterization of lacunar defects by positrons annihilation

International Nuclear Information System (INIS)

Barthe, M.F.; Corbel, C.; Blondiaux, G.

2003-01-01

Among the nondestructive methods for the study of matter, the positrons annihilation method allows to sound the electronic structure of materials by measuring the annihilation characteristics. These characteristics depend on the electronic density as seen by the positon, and on the electron momentums distribution which annihilate with the positon. The positon is sensible to the coulombian potential variations inside a material and sounds preferentially the regions away from nuclei which represent potential wells. The lacunar-type defects (lack of nuclei) represent deep potential wells which can trap the positon up to temperatures close to the melting. This article describes the principles of this method and its application to the characterization of lacunar defects: 1 - positrons: matter probes (annihilation of electron-positon pairs, annihilation characteristics, positrons sources); 2 - positrons interactions in solids (implantation profiles, annihilation states, diffusion and trapping, positon lifetime spectrum: evolution with the concentration of defects); 3 - measurement of annihilation characteristics with two gamma photons (lifetime spectroscopy with the β + 22 Na isotope, spectroscopy of Doppler enlargement of the annihilation line); 4 - determination of the free volume of defects inside or at the surface of materials (annihilation signature in lacunar defects, lacuna, lacunar clusters and cavities, acceptors nature in semiconductors: ionic or lacunar, interface defects, precipitates in alloys); 5 - conclusions. (J.S.)

Contribution of dynamic focusing to ultrasonic defect characterization

International Nuclear Information System (INIS)

Mahaut, S.

1997-01-01

Non destructive testing of vessels of pressurized water reactors uses ultrasonic focused transducers, with spherically shaped emitting surface or requiring an acoustic lens. But a mechanically focused transducer has to be used for a given inspection zone and for a fixed control configuration. The aim of this thesis is to improve ultrasonic defect characterization using adaptive dynamic focusing. Such a technique makes use of a ultrasonic defect characterization using adaptive dynamic focusing. Such a technique makes use of an ultrasonic transducer split into an array of individually controlled elements, allowing to apply delay and amplitude laws, calculated from modeling or experimentally deduced. Acoustical characteristics of the ultrasonic beam in the inspected specimen this can be electronically controlled; refraction angle, depth focusing, beam width. We briefly describe in the first chapter a theoretical modeling of the ultrasonic field radiated through a fluid/solid interface, extended to phase array transducers. This model is based on the integral formulation of Rayleigh, modified to take into account transmission through a fluid/solid (homogeneous and isotropic), of planar or cylindrical shape. In the second chapter an experimental study of this technique, with delay and amplitude laws given from the model, is presented, showing the efficiency of this method to adjust the acoustic performances. In he third chapter, experimental delay laws, extracted from the time distribution of signals received by the array (issued from a preliminary detected reflector), are used to provide an optimal imaging of the defect. This self-focusing procedure shows to adapt to a defect without using theoretical delays. The last chapter is dedicated to different applications devoted to improved defect characterization. The first application uses amplitude distribution received by the array, pointing out geometric characteristics of the reflector, while the second application

Perspectives on extended Deterrence

International Nuclear Information System (INIS)

Tertrais, Bruno; Yost, David S.; Bunn, Elaine; Lee, Seok-soo; Levite, Ariel e.; Russell, James A.; Hokayem, Emile; Kibaroglu, Mustafa; Schulte, Paul; Thraenert, Oliver; Kulesa, Lukasz

2010-05-01

In November 2009, the Foundation for Strategic Research (Fondation pour la recherche strategique, FRS) convened a workshop on 'The Future of extended Deterrence', which included the participation of some of the best experts of this topic, from the United States, Europe, the Middle East and East Asia, as well as French and NATO officials. This document brings together the papers prepared for this seminar. Several of them were updated after the publication in April 2010 of the US Nuclear Posture Review. The seminar was organized with the support of the French Atomic energy Commission (Commissariat a l'energie atomique - CEA). Content: 1 - The future of extended deterrence: a brainstorming paper (Bruno Tertrais); 2 - US extended deterrence in NATO and North-East Asia (David S. Yost); 3 - The future of US extended deterrence (Elaine Bunn); 4 - The future of extended deterrence: a South Korean perspective (Seok-soo Lee); 5 - Reflections on extended deterrence in the Middle East (Ariel e. Levite); 6 - extended deterrence, security guarantees and nuclear weapons: US strategic and policy conundrums in the Gulf (James A. Russell); 7 - extended deterrence in the Gulf: a bridge too far? (Emile Hokayem); 8 - The future of extended deterrence: the case of Turkey (Mustafa Kibaroglu); 9 - The future of extended deterrence: a UK view (Paul Schulte); 10 - NATO and extended deterrence (Oliver Thraenert); 11 - extended deterrence and assurance in Central Europe (Lukasz Kulesa)

Ab initio study of point defects in PbSe and PbTe: Bulk and nanowire

Energy Technology Data Exchange (ETDEWEB)

Wrasse, E. O. [Instituto de Física, Universidade Federal de Uberlândia, 38408-100, Uberlândia, MG, Brazil and Departamento de Física, Universidade Federal de Santa Maria, 97105-900, Santa Maria, RS (Brazil); Venezuela, P. [Instituto de Física, Universidade Federal Fluminense, 24210-346, Niteroi, RJ (Brazil); Baierle, R. J., E-mail: rbaierle@smail.ufsm.br [Departamento de Física, Universidade Federal de Santa Maria, 97105-900, Santa Maria, RS (Brazil)

2014-11-14

First principles investigations, within the spin-polarized density functional theory, are performed to study energetic stability and electronic properties of point defects (vacancies and antisites) in PbSe and PbTe: bulk and nanowire (NW). Our results show that the energetic stability of these defects is ruled by relaxation process. These defects have lower formation energies in the nanowire structures as compared to the bulk, being more stable in the surface of the NWs. We also show that in the bulk system only one charge state is stable, otherwise, due to the larger band gaps, more than one charge state may be stable in the NWs. In addition, we have investigated how the presence of intrinsic defects affects the electronic properties of bulk and NW systems. Vacancies give rise to new electronic states near to the edges of the valence and conduction bands while the energetic position of the electronic states from antisites depends on the charge state, being localized inside the band gap or near the edges of the valence or conduction bands. We discuss how these changes in the electronic properties due to intrinsic defects may affect the thermoelectric properties of PbSe and PbTe NWs.

Influence of growth temperature on bulk and surface defects in hybrid lead halide perovskite films

Science.gov (United States)

Peng, Weina; Anand, Benoy; Liu, Lihong; Sampat, Siddharth; Bearden, Brandon E.; Malko, Anton V.; Chabal, Yves J.

2016-01-01

The rapid development of perovskite solar cells has focused its attention on defects in perovskites, which are gradually realized to strongly control the device performance. A fundamental understanding is therefore needed for further improvement in this field. Recent efforts have mainly focused on minimizing the surface defects and grain boundaries in thin films. Using time-resolved photoluminescence spectroscopy, we show that bulk defects in perovskite samples prepared using vapor assisted solution process (VASP) play a key role in addition to surface and grain boundary defects. The defect state density of samples prepared at 150 °C (~1017 cm-3) increases by 5 fold at 175 °C even though the average grains size increases slightly, ruling out grain boundary defects as the main mechanism for the observed differences in PL properties upon annealing. Upon surface passivation using water molecules, the PL intensity and lifetime of samples prepared at 200 °C are only partially improved, remaining significantly lower than those prepared at 150 °C. Thus, the present study indicates that the majority of these defect states observed at elevated growth temperatures originates from bulk defects and underscores the importance to control the formation of bulk defects together with grain boundary and surface defects to further improve the optoelectronic properties of perovskites.The rapid development of perovskite solar cells has focused its attention on defects in perovskites, which are gradually realized to strongly control the device performance. A fundamental understanding is therefore needed for further improvement in this field. Recent efforts have mainly focused on minimizing the surface defects and grain boundaries in thin films. Using time-resolved photoluminescence spectroscopy, we show that bulk defects in perovskite samples prepared using vapor assisted solution process (VASP) play a key role in addition to surface and grain boundary defects. The defect state

Extended state observer–based fractional order proportional–integral–derivative controller for a novel electro-hydraulic servo system with iso-actuation balancing and positioning

Directory of Open Access Journals (Sweden)

Qiang Gao

2015-12-01

Full Text Available Aiming at balancing and positioning of a new electro-hydraulic servo system with iso-actuation configuration, an extended state observer–based fractional order proportional–integral–derivative controller is proposed in this study. To meet the lightweight requirements of heavy barrel weapons with large diameters, an electro-hydraulic servo system with a three-chamber hydraulic cylinder is especially designed. In the electro-hydraulic servo system, the balance chamber of the hydraulic cylinder is used to realize active balancing of the unbalanced forces, while the driving chambers consisting of the upper and lower chambers are adopted for barrel positioning and dynamic compensation of external disturbances. Compared with conventional proportional–integral–derivative controllers, the fractional order proportional–integral–derivative possesses another two adjustable parameters by expanding integer order to arbitrary order calculus, resulting in more flexibility and stronger robustness of the control system. To better compensate for strong external disturbances and system nonlinearities, the extended state observer strategy is further introduced to the fractional order proportional–integral–derivative control system. Numerical simulation and bench test indicate that the extended state observer–based fractional order proportional–integral–derivative significantly outperforms proportional–integral–derivative and fractional order proportional–integral–derivative control systems with better control accuracy and higher system robustness, well demonstrating the feasibility and effectiveness of the proposed extended state observer–based fractional order proportional–integral–derivative control strategy.

A new approach to reticle haze defect management in the fab

Science.gov (United States)

Gau, Yeu-Dong; Hsiao, Kevin; Hsu, Wen-Hao; Lu, Yu-Min; Chen, Chun-Chieh; Liu, Chen Min; Van Riet, Mike; Gaspar, Noah; Yu, Chien-Chun; Chan, Phillip

2009-04-01

The present practice of managing reticle haze defectivity involves reticle inspection at regular intervals, coupled with inspection of print-down wafers in between reticle inspections. The sensitivity of the reticle inspection tool allows it to detect haze defects before they are large enough to print on the wafer. Cleaning the reticle as soon as the reticle inspector detects haze defects could result in a shorter reticle lifetime. Thus there is strong motivation to develop a methodology to determine what size defect on the reticle results in a printable defect on the wafer. Printability depends upon several variables in the litho process as well as whether the defect resides in a high-MEEF (Mask Error Enhancement Factor) or low-MEEF area of the die.1 Trying to use wafer inspection to identify the first appearance of haze defects may require inspector recipe settings that are not suited to a practical wafer scan. A novel method of managing such defects is to map the coordinates of the defects from the reticle onto the wafer, and apply a separate, hyper-sensitive threshold to a small area surrounding the given coordinates. With this method, one can start to correlate the size of the defects printed on the wafer to the light transmission rate from the corresponding site on the reticle scan, and thus can predict the starting point at which the haze defects on the reticle are likely to print on the wafer. The experiment described in this paper is a first step in exploring the feasibility of this method to help track the growth of nascent haze defects and optimize the timing to rework the reticles. The methodology may have extendibility to other applications in which hyper-sensitive wafer inspection at localized areas within the die would be beneficial, such as monitoring weak spots found by Optical Rule Check, Process Window Qualification, electrical test or failure analysis.

International conference on defects in insulating crystals

Energy Technology Data Exchange (ETDEWEB)

1977-01-01

Short summaries of conference papers are presented. Some of the conference topics included transport properties, defect levels, superionic conductors, radiation effects, John-Teller effect, electron-lattice interactions, and relaxed excited states. (SDF)

Possible D(*) anti D(*) and B(*) anti B(*) molecular states in the extended constituent quark models

International Nuclear Information System (INIS)

Yang, You-Chang; Tan, Zhi-Yun; Ping, Jialun; Zong, Hong-Shi

2017-01-01

The possible neutral D (*) anti D (*) and B (*) anti B (*) molecular states are studied in the framework of the constituent quark models, which is extended by including the s-channel one-gluon exchange. Using different types of quark-quark potentials, we solve the four-body Schroedinger equation by means of the Gaussian expansion method. The bound states of D (*) anti D (*) with J PC = 1 ++ , 2 ++ and B (*) anti B (*) with J PC = 0 ++ , 1 +- , 1 ++ , 2 ++ are obtained. The molecular states D* anti D with J PC = 1 ++ and B* anti B with J PC = 1 +- are good candidates for X(3872) and Z 0 b (10610), respectively. The dependence of the results on the model parameters is also discussed. (orig.)

Pattern and Management of acquired Facial defects in Imo State ...

African Journals Online (AJOL)

Alasia Datonye

the pattern, aetiology and management approach for facial defects in our centre and highlights the challenges faced in managing these patients. Method: A review of clinical records of consecutive patients ..... sleeves and trousers or long skirts. They should wear hats with broad rims, limit their outdoor activities out in the sun.

Structural Defects in Donor-Acceptor Blends: Influence on the Performance of Organic Solar Cells

Science.gov (United States)

Sergeeva, Natalia; Ullbrich, Sascha; Hofacker, Andreas; Koerner, Christian; Leo, Karl

2018-02-01

Defects play an important role in the performance of organic solar cells. The investigation of trap states and their origin can provide ways to further improve their performance. Here, we investigate defects in a system composed of the small-molecule oligothiophene derivative DCV5T-Me blended with C60 , which shows power conversion efficiencies above 8% when used in a solar cell. From a reconstruction of the density of trap states by impedance spectroscopy, we obtain a Gaussian distribution of trap states with Et=470 meV below the electron transport level, Nt=8 ×1014 cm-3 , and σt=41 meV . From Voc vs illumination intensity and open-circuit corrected charge carrier extraction measurements, we find that these defects lead to trap-assisted recombination. Moreover, drift-diffusion simulations show that the trap states decrease the fill factor by 10%. By conducting degradation measurements and varying the blend ratio, we find that the observed trap states are structural defects in the C60 phase due to the distortion of the natural morphology induced by the mixing.

Characterization of point defects in CdTe by positron annihilation spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Elsharkawy, M. R. M. [Carnegie Laboratory of Physics, SUPA, School of Science and Engineering, University of Dundee, Dundee DD1 4HN (United Kingdom); Physics Department, Faculty of Science, Minia University, P.O. Box 61519, Minia (Egypt); Kanda, G. S.; Keeble, D. J., E-mail: d.j.keeble@dundee.ac.uk [Carnegie Laboratory of Physics, SUPA, School of Science and Engineering, University of Dundee, Dundee DD1 4HN (United Kingdom); Abdel-Hady, E. E. [Physics Department, Faculty of Science, Minia University, P.O. Box 61519, Minia (Egypt)

2016-06-13

Positron lifetime measurements on CdTe 0.15% Zn-doped by weight are presented, trapping to monovacancy defects is observed. At low temperatures, localization at shallow binding energy positron traps dominates. To aid defect identification density functional theory, calculated positron lifetimes and momentum distributions are obtained using relaxed geometry configurations of the monovacancy defects and the Te antisite. These calculations provide evidence that combined positron lifetime and coincidence Doppler spectroscopy measurements have the capability to identify neutral or negative charge states of the monovacancies, the Te antisite, A-centers, and divacancy defects in CdTe.

Defect mediated optical properties in ZnAl2O4 phosphor

Science.gov (United States)

Pathak, Nimai; Saxena, Suryansh; Kadam, R. M.

2018-04-01

The present work describes defect mediated optical properties in ZnAl2O4 phosphor material, synthesized through sol-gel combustion method, which has potential to be used both as a blue emitting phosphor material as well as white emitting, depending upon the annealing temperature during the synthesis procedure. Various defect centers such as anionic vacancy, cationic vacancy, antisite defects etc. create different electronic states inside the band gap, which are responsible for the multicolour emission. The interesting colour tunable emission characteristics can be linked with the various defect centers and their changes upon annealing.

A DFT study of Cu nanoparticles adsorbed on defective graphene

International Nuclear Information System (INIS)

García-Rodríguez, D.E.; Mendoza-Huizar, L.H.; Díaz, C.

2017-01-01

Highlights: • Cu_n supported on graphene may be a promising electrode material for DBFC's cells. • Cu_n/graphene interaction is rather local and size independent. • Cu_1_3 anchors strongly to defects in graphene, while keeping its gas-phase properties. - Abstract: Metal nanoparticles adsorbed on graphene are systems of interest for processes relative to catalytic reactions and alternative energy production. Graphene decorated with Cu-nanoparticles, in particular, could be a good alternative material for electrodes in direct borohydride fuel cells. However our knowledge of this system is still very limited. Based on density functional theory, we have analyzed the interaction of Cu_n nanoparticles (n = 4, 5, 6, 7, 13) with pristine and defective-graphene. We have considered two types of defects, a single vacancy (SV), and an extended lineal structural defect (ELSD), formed by heptagon-pentagon pairs. Our analysis has revealed the covalent character of the Cu_n-graphene interaction for pristine- and ELSD-graphene, and a more ionic-like interaction for SV-graphene. Furthermore, our analysis shows that the interaction between the nanoparticles and the graphene is rather local, i.e., only the nanoparticle atoms close to the contact region are involved in the interaction, being the electronic contact region much higher for defective-graphene than for pristine-graphene. Thus, the higher the particle the lower its average electronic and structural distortion.

Defect-impurity complex induced long-range ferromagnetism in GaN nanowires

KAUST Repository

Assa Aravindh, S

2015-12-14

Present work investigates the structural, electronic and magnetic properties of Gd doped wurtzite GaN nanowires (NWs) oriented along the [0001] direction in presence of intrinsic defects by employing the GGA + U approximation. We find that Ga vacancy (VGa) exhibits lower formation energy compared to N vacancy. Further stabilization of point defects occurs due to the presence of Gd. The strength of ferromagnetism (FM) increases by additional positive charge induced by the VGa. Electronic structure analysis shows that VGa introduces defect levels in the band gap leading to ferromagnetic coupling due to the hybridization of the p states of the Ga and N atoms with the Gd d and f states. Ferromagnetic exchange coupling energy of 76.4 meV is obtained in presence of Gd-VGa complex; hence, the FM is largely determined by the cation vacancy-rare earth complex defects in GaN NWs.

Defect-impurity complex induced long-range ferromagnetism in GaN nanowires

KAUST Repository

Assa Aravindh, S; Roqan, Iman S.

2015-01-01

Present work investigates the structural, electronic and magnetic properties of Gd doped wurtzite GaN nanowires (NWs) oriented along the [0001] direction in presence of intrinsic defects by employing the GGA + U approximation. We find that Ga vacancy (VGa) exhibits lower formation energy compared to N vacancy. Further stabilization of point defects occurs due to the presence of Gd. The strength of ferromagnetism (FM) increases by additional positive charge induced by the VGa. Electronic structure analysis shows that VGa introduces defect levels in the band gap leading to ferromagnetic coupling due to the hybridization of the p states of the Ga and N atoms with the Gd d and f states. Ferromagnetic exchange coupling energy of 76.4 meV is obtained in presence of Gd-VGa complex; hence, the FM is largely determined by the cation vacancy-rare earth complex defects in GaN NWs.

French approach on the definition of reference defects to be considered for fracture mechanics analyses at design state

Energy Technology Data Exchange (ETDEWEB)

Grandemange, J M; Pellissier-Tanon, A [Societe Franco-Americaine de Constructions Atomiques (FRAMATOME), 92 - Paris-La-Defense (France)

1988-12-31

This document describes the french approach for verifying fracture resistance of PWR primary components. Three reference defects have been defined, namely the envelope defect, the exceptional defect and the conventional defect. It appears that a precise estimation of the available margins may be obtained by analyzing a set of reference defects representative of the flaws likely to exist in the components. (TEC). 5 refs.

Quasiclassical approach to the weak levitation of extended states in the quantum Hall effect

OpenAIRE

Fogler, M. M.

1997-01-01

The two-dimensional motion of a charged particle in a random potential and a transverse magnetic field is believed to be delocalized only at discrete energies $E_N$. In strong fields there is a small positive deviation of $E_N$ from the center of the $N$th Landau level, which is referred to as the ``weak levitation'' of the extended state. I calculate the size of the weak levitation effect for the case of a smooth random potential re-deriving earlier results of Haldane and Yang [PRL 78, 298 (...

Imaging Findings of Pelvic Tumor Thrombosis Extending from Sacral Bone Metastasis of Adrenocortical Carcinoma

Directory of Open Access Journals (Sweden)

Kenichiro Ishida

2012-01-01

Full Text Available We report the imaging findings of a patient with adrenocortical carcinoma who showed pelvic tumor thrombosis extending from sacral bone metastasis. Contrast-enhanced computed tomography demonstrated extensive intraluminal filling defects in the pelvic veins. A lytic lesion in the sacrum was also noted and continuity between the sacral lesion and the filling defect in the branch of pelvic veins was indicated. The filling defects showed increased uptake on positron emission tomography with 18F-fluorodeoxyglucose and single-photon emission computed tomography with 131I-iodomethylnorcholesterol, and fusion images with computed tomography aided the localization of the increased uptake areas. Multimodality imaging may be beneficial for the characterization and localization of lesions in patients suspected of having metastatic adrenocortical carcinoma.

Do more health insurance options lead to higher wages? Evidence from states extending dependent coverage.

Science.gov (United States)

Dillender, Marcus

2014-07-01

Little is known about how health insurance affects labor market decisions for young adults. This is despite the fact that expanding coverage for people in their early 20s is an important component of the Affordable Care Act. This paper studies how having an outside source of health insurance affects wages by using variation in health insurance access that comes from states extending dependent coverage to young adults. Using American Community Survey and Census data, I find evidence that extending health insurance to young adults raises their wages. The increases in wages can be explained by increases in human capital and the increased flexibility in the labor market that comes from people no longer having to rely on their own employers for health insurance. The estimates from this paper suggest the Affordable Care Act will lead to wage increases for young adults. Copyright © 2014 Elsevier B.V. All rights reserved.

Passivation of defect states in Si and Si/SiO2 interface states by cyanide treatment: improvement of characteristics of pin-junction amorphous Si and crystalline Si-based metal-oxide-semiconductor junction solar cells

International Nuclear Information System (INIS)

Fujiwara, N.; Fujinaga, T.; Niinobe, D.; Maida, O.; Takahashi, M.; Kobayashi, H.

2003-01-01

Defect states in Si can be passivated by cyanide treatment which simply involves immersion of Si materials in KCN solutions, followed by rinse. When the cyanide treatment is applied to pin-junction amorphous Si [a-Si] solar cells, the initial conversion efficiency increases. When the crown-ether cyanide treatment using a KCN solution of xylene containing 18-crown-6 is performed on i-a-Si films, decreases in the photo- and dark current densities with the irradiation time are prevented. The cyanide treatment can also passivate interface states present at Si/SiO 2 interfaces, leading to an increase in the conversion efficiency of 2 / Si (100)> solar cells.. Si-CN bonds formed by the reaction of defect states with cyanide ions have a high bond energy of about 4.5 eV and hence heat treatment at 800 0 C does not rupture the bonds, making thermal stability of the cyanide treatment.. When the cyanide treatment is applied to ultrathin SiO 2 /Si structure, the leakage current density is markedly decreased (Authors)

Light-induced defects in hybrid lead halide perovskite

Science.gov (United States)

Sharia, Onise; Schneider, William

One of the main challenges facing organohalide perovskites for solar application is stability. Solar cells must last decades to be economically viable alternatives to traditional energy sources. While some causes of instability can be avoided through engineering, light-induced defects can be fundamentally limiting factor for practical application of the material. Light creates large numbers of electron and hole pairs that can contribute to degradation processes. Using ab initio theoretical methods, we systematically explore first steps of light induced defect formation in methyl ammonium lead iodide, MAPbI3. In particular, we study charged and neutral Frenkel pair formation involving Pb and I atoms. We find that most of the defects, except negatively charged Pb Frenkel pairs, are reversible, and thus most do not lead to degradation. Negative Pb defects create a mid-gap state and localize the conduction band electron. A minimum energy path study shows that, once the first defect is created, Pb atoms migrate relatively fast. The defects have two detrimental effects on the material. First, they create charge traps below the conduction band. Second, they can lead to degradation of the material by forming Pb clusters.

Disclinations, dislocations, and continuous defects: A reappraisal

Science.gov (United States)

Kleman, M.; Friedel, J.

2008-01-01

Disclinations were first observed in mesomorphic phases. They were later found relevant to a number of ill-ordered condensed-matter media involving continuous symmetries or frustrated order. Disclinations also appear in polycrystals at the edges of grain boundaries; but they are of limited interest in solid single crystals, where they can move only by diffusion climb and, owing to their large elastic stresses, mostly appear in close pairs of opposite signs. The relaxation mechanisms associated with a disclination in its creation, motion, and change of shape involve an interplay with continuous or quantized dislocations and/or continuous disclinations. These are attached to the disclinations or are akin to Nye’s dislocation densities, which are particularly well suited for consideration here. The notion of an extended Volterra process is introduced, which takes these relaxation processes into account and covers different situations where this interplay takes place. These concepts are illustrated by a variety of applications in amorphous solids, mesomorphic phases, and frustrated media in their curved habit space. These often involve disclination networks with specific node conditions. The powerful topological theory of line defects considers only defects stable against any change of boundary conditions or relaxation processes compatible with the structure considered. It can be seen as a simplified case of the approach considered here, particularly suited for media of high plasticity or/and complex structures. It cannot analyze the dynamical properties of defects nor the elastic constants involved in their static properties; topological stability cannot guarantee energetic stability, and sometimes cannot distinguish finer details of the structure of defects.

On-line defected fuel monitoring using GFP data

International Nuclear Information System (INIS)

Livingstone, S.; Lewis, B.J.

2008-01-01

This paper describes the initial development of an on-line defected fuel diagnostic tool. The tool is based on coolant activity, and uses a quantitative and qualitative approach from existing mechanistic fission product release models, and also empirical rules based on commercial and experimental experience. The model departs from the usual methodology of analyzing steady-state fission product coolant activities, and instead uses steady-state fission product release rates calculated from the transient coolant activity data. An example of real-time defected fuel analysis work is presented using a prototype of this tool with station data. The model is in an early developmental stage, and this paper demonstrates the promising potential of this technique. (author)

Comparisons of predicted steady-state levels in rooms with extended- and local-reaction bounding surfaces

Science.gov (United States)

Hodgson, Murray; Wareing, Andrew

2008-01-01

A combined beam-tracing and transfer-matrix model for predicting steady-state sound-pressure levels in rooms with multilayer bounding surfaces was used to compare the effect of extended- and local-reaction surfaces, and the accuracy of the local-reaction approximation. Three rooms—an office, a corridor and a workshop—with one or more multilayer test surfaces were considered. The test surfaces were a single-glass panel, a double-drywall panel, a carpeted floor, a suspended-acoustical ceiling, a double-steel panel, and glass fibre on a hard backing. Each test surface was modeled as of extended or of local reaction. Sound-pressure levels were predicted and compared to determine the significance of the surface-reaction assumption. The main conclusions were that the difference between modeling a room surface as of extended or of local reaction is not significant when the surface is a single plate or a single layer of material (solid or porous) with a hard backing. The difference is significant when the surface consists of multilayers of solid or porous material and includes a layer of fluid with a large thickness relative to the other layers. The results are partially explained by considering the surface-reflection coefficients at the first-reflection angles.

EXTENDED REVERSE SURAL FLAP FOR LOWER LIMB COVERAGE

Directory of Open Access Journals (Sweden)

Biswajit Mishra

2018-12-01

Full Text Available BACKGROUND The reverse sural artery flap has been a workhorse for the reconstruction of distal third of leg, ankle, sole and foot. Major limitation of reverse sural flap has been venous congestion particularly when harvested from proximal third of the leg. Objective- To evaluate the efficacy, safety of the extended reverse sural flap from proximal third of the leg. MATERIALS AND METHODS A prospective study was conducted at the department of plastic surgery on twenty patients who needed soft tissue reconstruction in the distal third of the leg, ankle, heel, forefoot and midfoot due to various cause. In all cases flap was extended proximally to the upper third of the calf and neurovenoadipo fascial pedicled sural fasciocutaneous flap was harvested. RESULTS There were only two cases of marginal necrosis. None of the patients had complete necrosis. Two patients developed hypertrophy of the flap margin. CONCLUSION Distally based neuroveno adipofascial pedicled sural fasciocutaneous flap can be safely extended to proximal third of the leg and is a reliable option for reconstruction of the defects in the foot, ankle and sole.

Dynamic properties of interstitial carbon and carbon-carbon pair defects in silicon

International Nuclear Information System (INIS)

Leary, P.; Jones, R.; Oeberg, S.; Torres, V.J.

1997-01-01

Interstitial carbon, C i , defects in Si exhibit a number of unexplained features. The C i defect in the neutral charge state gives rise to two almost degenerate vibrational modes at 920 and 931 cm -1 whose 2:1 absorption intensity ratio naturally suggests a trigonal defect in conflict with uniaxial stress measurements. The dicarbon, C s -C i , defect is bistable, and the energy difference between its A and B forms is surprisingly small even though the bonding is very different. In the B form appropriate to the neutral charge state, a silicon interstitial is believed to be located near a bond-centered site between two C s atoms. This must give rise to vibrational modes which involve the motion of both C atoms in apparent conflict with the results of photoluminescence experiments. We use an ab initio local density functional cluster method, AIMPRO, to calculate the structure and vibrational modes of these defects and find that the ratio of the absorption intensities of the local modes of C i is in reasonable agreement with experiment even though the structure of the defect is not trigonal. We also show that modes in the vicinity of those detected by photoluminescence for the B form of the dicarbon center involve independent movements of the two C atoms. Finally, the trends in the relative energies of the A and B forms in three charge states are investigated. copyright 1996 The American Physical Society

Understanding and Calibrating Density-Functional-Theory Calculations Describing the Energy and Spectroscopy of Defect Sites in Hexagonal Boron Nitride.

Science.gov (United States)

Reimers, Jeffrey R; Sajid, A; Kobayashi, Rika; Ford, Michael J

2018-03-13

Defect states in 2-D materials present many possible uses but both experimental and computational characterization of their spectroscopic properties is difficult. We provide and compare results from 13 DFT and ab initio computational methods for up to 25 excited states of a paradigm system, the V N C B defect in hexagonal boron nitride (h-BN). Studied include: (i) potentially catastrophic effects for computational methods arising from the multireference nature of the closed-shell and open-shell states of the defect, which intrinsically involves broken chemical bonds, (ii) differing results from DFT and time-dependent DFT (TDDFT) calculations, (iii) comparison of cluster models to periodic-slab models of the defect, (iv) the starkly differing effects of nuclear relaxation on the various electronic states that control the widths of photoabsorption and photoemission spectra as broken bonds try to heal, (v) the effect of zero-point energy and entropy on free-energy differences, (vi) defect-localized and conduction/valence-band transition natures, and (vii) strategies needed to ensure that the lowest-energy state of a defect can be computationally identified. Averaged state-energy differences of 0.3 eV are found between CCSD(T) and MRCI energies, with thermal effects on free energies sometimes also being of this order. However, DFT-based methods can perform very poorly. Simple generalized-gradient functionals like PBE fail at the most basic level and should never be applied to defect states. Hybrid functionals like HSE06 work very well for excitations within the triplet manifold of the defect, with an accuracy equivalent to or perhaps exceeding the accuracy of the ab initio methods used. However, HSE06 underestimates triplet-state energies by on average of 0.7 eV compared to closed-shell singlet states, while open-shell singlet states are predicted to be too low in energy by 1.0 eV. This leads to misassignment of the ground state of the V N C B defect. Long

Quasiclassical approach to the weak levitation of extended states in the quantum Hall effect

International Nuclear Information System (INIS)

Fogler, M.M.

1998-01-01

The two-dimensional motion of a charged particle in a random potential and a transverse magnetic field is believed to be delocalized only at discrete energies E N . In strong fields there is a small positive deviation of E N from the center of the Nth Landau level, which is referred to as the open-quotes weak levitationclose quotes of the extended state. I calculate the size of the weak levitation effect for the case of a smooth random potential rederiving earlier results of Haldane and Yang [Phys. Rev. Lett. 78, 298 (1997)] and extending their approach to lower magnetic fields. I find that as the magnetic field decreases, this effect remains weak down to the lowest field B min where such a quasiclassical approach is still justified. Moreover, in the immediate vicinity of B min the weak levitation becomes additionally suppressed. This indicates that the open-quotes strong levitationclose quotes expected at yet even lower magnetic fields must be of a completely different origin. copyright 1998 The American Physical Society

Magnetism tuned by the charge states of defects in bulk C-doped SnO2 materials.

Science.gov (United States)

Lu, Ying-Bo; Ling, Z C; Cong, Wei-Yan; Zhang, Peng

2015-10-21

To analyze the controversial conclusions on the magnetism of C-doped SnO2 (SnO2:C) bulk materials between theoretical calculations and experimental observations, we propose the critical role of the charge states of defects in the geometric structures and magnetism, and carry out a series of first principle calculations. By changing the charge states, we can influence Bader charge distributions and atomic orbital occupancies in bulk SnO2:C systems, which consequently conduct magnetism. In all charged SnO2:C supercells, C-2px/py/pz electron occupancies are significantly changed by the charge self-regulation, and thus they make the C-2p orbitals spin polarized, which contribute to the dominant magnetic moment of the system. When the concentration of C dopant in the SnO2 supercell increases, the charge redistribution assigns extra electrons averagely to each dopant, and thus effectively modulates the magnetism. These findings provide an experimentally viable way for controlling the magnetism in these systems.

Lithium niobate. Defects, photorefraction and ferroelectric switching

Energy Technology Data Exchange (ETDEWEB)

Volk, Tatyana [Russian Academy of Sciences, Inst. for Crystallography, Moscow (Russian Federation); Woehlecke, Manfred [Osnabrueck Univ. (Germany). Fachbereich Physik

2008-07-01

The book presents the current state of studies of point defects, both intrinsic and extrinsic (impurities, radiation centers, etc.), in LiNbO{sub 3}. The contribution of intrinsic defects to photoinduced charge transport, i.e. to the photorefraction, is explained. The photorefractive and optical properties of LiNbO{sub 3} crystals with different stoichiometry and of those doped with so-called ''optical-damage resistant'' impurities controlling the intrinsic defect structure are described in detail. Applications included are to the problem of non-erasable recording of photorefractive holograms in LiNbO{sub 3} and the current situation of studies in the ferroelectric switching and domain structure of LiNbO{sub 3}, as well as the creation of periodically-poled structures for the optical frequency conversion. (orig.)

Esthetic management of mucogingival defects after excision of epulis using laterally positioned flaps.

Science.gov (United States)

Xie, Yu-feng; Shu, Rong; Qian, Jie-lei; Lin, Zhi-kai; Romanos, Georgios E

2015-03-01

Epulis is a benign hyperplasia of the oral soft tissues. Surgical excision always extends to the periosteum and includes scaling of adjacent teeth to remove any possible irritants. The esthetics of the soft tissues may be compromised, however. This article studies three cases in which an immediate laterally positioned flap (LRF) was used to repair mucogingival defects after epulis biopsies. After 24 months, the color and shape of the surgical areas were healthy and stable, nearly complete root coverage was evident, and no lesions reoccurred. For repairing gingival defects after biopsy, LRF appears to be minimally traumatic while promoting esthetic outcomes.

Immobile defects in ferroelastic walls: Wall nucleation at defect sites

Science.gov (United States)

He, X.; Salje, E. K. H.; Ding, X.; Sun, J.

2018-02-01

Randomly distributed, static defects are enriched in ferroelastic domain walls. The relative concentration of defects in walls, Nd, follows a power law distribution as a function of the total defect concentration C: N d ˜ C α with α = 0.4 . The enrichment Nd/C ranges from ˜50 times when C = 10 ppm to ˜3 times when C = 1000 ppm. The resulting enrichment is due to nucleation at defect sites as observed in large scale MD simulations. The dynamics of domain nucleation and switching is dependent on the defect concentration. Their energy distribution follows the power law with exponents during yield between ɛ ˜ 1.82 and 2.0 when the defect concentration increases. The power law exponent is ɛ ≈ 2.7 in the plastic regime, independent of the defect concentration.

An extension of fracture mechanics/technology to larger and smaller cracks/defects

Science.gov (United States)

Abé, Hiroyuki

2009-01-01

Fracture mechanics/technology is a key science and technology for the design and integrity assessment of the engineering structures. However, the conventional fracture mechanics has mostly targeted a limited size of cracks/defects, say of from several hundred microns to several tens of centimeters. The author and his group has tried to extend that limited size and establish a new version of fracture technology for very large cracks used in geothermal energy extraction and for very small cracks/defects or damage often appearing in the combination of mechanical and electronic components of engineering structures. Those new versions are reviewed in this paper. PMID:19907123

Unexpected properties of the inductively coupled plasma induced defect in germanium

Energy Technology Data Exchange (ETDEWEB)

Coelho, S.M.M., E-mail: sergio@up.ac.za; Auret, F.D.; Janse van Rensburg, P.J.; Nel, J.M.

2014-04-15

Inductively coupled plasma (ICP) etching of germanium introduces a single defect, the E{sub 0.31} electron trap, for a large range of argon partial pressures from 4×10{sup –3} to 6.5×10{sup –4} mbar that correspond to ion energies of 8 to 60 eV. Ge of three crystallographic orientations, (1 0 0), (1 1 0) and (1 1 1), treated with 20 and 60 eV ICP had defect concentration profiles that were similar in appearance, with a maximum concentration of 10{sup 14} cm{sup −3} extending more than a µm into the material, approximately three orders of magnitude deeper than what TRIM simulations predicted. All profiles were measured using Laplace deep level transient spectroscopy (L-DLTS), a technique that is sensitive to defect concentrations as low as 10{sup 11} cm{sup −3}. Isochronal annealing of samples showed concentration curves broadening after a 400 K anneal and decreasing to the 10{sup 13} cm{sup −3} level after a 450 K anneal. Unannealed samples measured after a year exhibited similar decreases in defect concentration without broadening of their profiles. A 550 K anneal lowered the defect concentration to levels below the L-DLTS detection limit. Thereafter additional plasma treatment of the surface failed to reintroduce this defect indicating that the structure required for the formation of E{sub 0.31} was no longer present in the region under observation.

The electronic and optical properties of amorphous silica with hydrogen defects by ab initio calculations

Science.gov (United States)

Ren, Dahua; Xiang, Baoyan; Hu, Cheng; Qian, Kai; Cheng, Xinlu

2018-04-01

Hydrogen can be trapped in the bulk materials in four forms: interstitial molecular H2, interstitial atom H, O‑H+(2Si=O–H)+, Si‑H‑( {{4O}}\\bar \\equiv {{Si&x2212H}})‑ to affect the electronic and optical properties of amorphous silica. Therefore, the electronic and optical properties of defect-free and hydrogen defects in amorphous silica were performed within the scheme of density functional theory. Initially, the negative charged states hydrogen defects introduced new defect level between the valence band top and conduction band bottom. However, the neutral and positive charged state hydrogen defects made both the valence band and conduction band transfer to the lower energy. Subsequently, the optical properties such as absorption spectra, conductivity and loss functions were analyzed. It is indicated that the negative hydrogen defects caused the absorption peak ranging from 0 to 2.0 eV while the positive states produced absorption peaks at lower energy and two strong absorption peaks arose at 6.9 and 9.0 eV. However, the neutral hydrogen defects just improved the intensity of absorption spectrum. This may give insights into understanding the mechanism of laser-induced damage for optical materials. Project supported by the Science and Technology of Hubei Provincial Department of Education (No. B2017098).

EUV multilayer defect compensation (MDC) by absorber pattern modification: from theory to wafer validation

Science.gov (United States)

Pang, Linyong; Hu, Peter; Satake, Masaki; Tolani, Vikram; Peng, Danping; Li, Ying; Chen, Dongxue

2011-11-01

According to the ITRS roadmap, mask defects are among the top technical challenges to introduce extreme ultraviolet (EUV) lithography into production. Making a multilayer defect-free extreme ultraviolet (EUV) blank is not possible today, and is unlikely to happen in the next few years. This means that EUV must work with multilayer defects present on the mask. The method proposed by Luminescent is to compensate effects of multilayer defects on images by modifying the absorber patterns. The effect of a multilayer defect is to distort the images of adjacent absorber patterns. Although the defect cannot be repaired, the images may be restored to their desired targets by changing the absorber patterns. This method was first introduced in our paper at BACUS 2010, which described a simple pixel-based compensation algorithm using a fast multilayer model. The fast model made it possible to complete the compensation calculations in seconds, instead of days or weeks required for rigorous Finite Domain Time Difference (FDTD) simulations. Our SPIE 2011 paper introduced an advanced compensation algorithm using the Level Set Method for 2D absorber patterns. In this paper the method is extended to consider process window, and allow repair tool constraints, such as permitting etching but not deposition. The multilayer defect growth model is also enhanced so that the multilayer defect can be "inverted", or recovered from the top layer profile using a calibrated model.

Decelerating defects and non-ergodic critical behaviour in a unidirectionally coupled map lattice

International Nuclear Information System (INIS)

Ashwin, Peter; Sturman, Rob

2003-01-01

We examine a coupled map lattice (CML) consisting of an infinite chain of logistic maps coupled in one direction by inhibitory coupling. We find that for sufficiently strong coupling strength there are dynamical states with 'decelerating defects', where defects between stable patterns (with chaotic temporal evolution and average spatial period two) slow down but never stop. These defects annihilate each other when they meet. We show for certain states that this leads to a lack of convergence (non-ergodicity) of averages taken from observables in the system and conjecture that this is typical for the system

Anisotropic Magnus Force in Type-II Superconductors with Planar Defects

Science.gov (United States)

Monroy, Ricardo Vega; Gomez, Eliceo Cortés

2015-02-01

The effect of planar defects on the Magnus force in type-II superconductors is studied. It is shown that the deformation of the vortex due to the presence of a planar defect leads to a local decrease in the mean free path of electrons in the vortex. This effect reduces the effective Magnus coefficient in normal direction to the planar defect, leading to an anisotropic regime of the Hall effect. The presented developments here can qualitatively explain experimental observations of the anisotropic Hall effect in high- T c superconductors in the mixed state.

Application of extended gamma sources to radiography

International Nuclear Information System (INIS)

Borisov, A.E.; Ivanov, V.S.; Majorov, A.N.; Firstov, V.G.

1977-01-01

The possibility to use extended sources for gamma radiographic control of small diameter pipe-sockets welded joints has been studied. Special gamma radiation sources basing on Tm 170 have been developed. To prevent influence of the nonuniform radioactivity distribution in the sources on control results, the steel welded pipe-sockets of different diameter and thickness have been X-rayed under stable rotation velocity of sources. Data are presented on dependence of the radiographic control sensitivity on pipe-socket diameter, wall thickness, as well as on focus distances. The Tm 170 sources have been shown to be better used for thin-wall articles control with focus distances up to 5 mm, when the sensitivity is maximum. It has been found that the maximum geometric unsharpness of 1-6 mm appears in articles with 3-10 mm thickness and relative defect size of 1-5%. Extended sources make it possible to carry out the control in unaccessable places and with small focus distances with high capacity

Incorporation of defects into the central atoms model of a metallic glass

International Nuclear Information System (INIS)

Lass, Eric A.; Zhu Aiwu; Shiflet, G.J.; Joseph Poon, S.

2011-01-01

The central atoms model (CAM) of a metallic glass is extended to incorporate thermodynamically stable defects, similar to vacancies in a crystalline solid, within the amorphous structure. A bond deficiency (BD), which is the proposed defect present in all metallic glasses, is introduced into the CAM equations. Like vacancies in a crystalline solid, BDs are thermodynamically stable entities because of the increase in entropy associated with their creation, and there is an equilibrium concentration present in the glassy phase. When applied to Cu-Zr and Ni-Zr binary metallic glasses, the concentration of thermally induced BDs surrounding Zr atoms reaches a relatively constant value at the glass transition temperature, regardless of composition within a given glass system. Using this 'critical' defect concentration, the predicted temperatures at which the glass transition is expected to occur are in good agreement with the experimentally determined glass transition temperatures for both alloy systems.

A DFT study of Cu nanoparticles adsorbed on defective graphene

Energy Technology Data Exchange (ETDEWEB)

García-Rodríguez, D.E. [Universidad Politécnica de Aguascalientes, Calle Paseo San Gerardo No. 297 Fracc. San Gerardo, 20342 Aguascalientes, Ags. (Mexico); Mendoza-Huizar, L.H. [Universidad Autónoma del Estado de Hidalgo, Área Académica de Química, Ciudad del Conocimiento. Carretera Pachuca-Tulancigo Km. 4.5 Mineral de la Reforma, 42186 Hidalgo (Mexico); Díaz, C., E-mail: cristina.diaz@uam.es [Departamento de Química, Módulo 13, Universidad Autónoma de Madrid, 28049 Madrid (Spain); Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, 28049 Madrid (Spain); Institute for Advanced Research in Chemical Science (IAdChem), Universidad Autónoma de Madrid, 28049 Madrid (Spain)

2017-08-01

Highlights: • Cu{sub n} supported on graphene may be a promising electrode material for DBFC's cells. • Cu{sub n}/graphene interaction is rather local and size independent. • Cu{sub 13} anchors strongly to defects in graphene, while keeping its gas-phase properties. - Abstract: Metal nanoparticles adsorbed on graphene are systems of interest for processes relative to catalytic reactions and alternative energy production. Graphene decorated with Cu-nanoparticles, in particular, could be a good alternative material for electrodes in direct borohydride fuel cells. However our knowledge of this system is still very limited. Based on density functional theory, we have analyzed the interaction of Cu{sub n} nanoparticles (n = 4, 5, 6, 7, 13) with pristine and defective-graphene. We have considered two types of defects, a single vacancy (SV), and an extended lineal structural defect (ELSD), formed by heptagon-pentagon pairs. Our analysis has revealed the covalent character of the Cu{sub n}-graphene interaction for pristine- and ELSD-graphene, and a more ionic-like interaction for SV-graphene. Furthermore, our analysis shows that the interaction between the nanoparticles and the graphene is rather local, i.e., only the nanoparticle atoms close to the contact region are involved in the interaction, being the electronic contact region much higher for defective-graphene than for pristine-graphene. Thus, the higher the particle the lower its average electronic and structural distortion.

Analysis of Bending Waves in Phononic Crystal Beams with Defects

Directory of Open Access Journals (Sweden)

Yongqiang Guo

2018-01-01

Full Text Available Existing investigations on imperfect phononic crystal beams mainly concern periodic multi-span beams carrying either one or two channel waves with random or deterministic disorder in span-length. This paper studies the two channel bending waves in phononic crystal beams consisting of many phases of materials with defects introduced as one structural segment having different cross-sectional dimensions or material parameters. The method of reverberation-ray matrix (MRRM based on the Timoshenko beam theory, which can conduct high-frequency analysis, is extended for the theoretical analysis of dispersion and transmission of bending waves. The supercell technique and the Floquet–Bloch theorem are adopted for modeling the dispersion characteristics, and the whole finite structural model is used to calculate the transmission spectra. Experimental measurements and numerical calculations are provided to validate the displacement transmission obtained by the proposed MRRM, with the effect of damping on transmission spectra being concerned. The high-frequency calculation applicability of the proposed MRRM is also confirmed by comparing the present results with the corresponding ones either using the transfer matrix method (TMM or MRRM based on Euler—Bernoulli beam theory. The influences of defect size, defect form, and unit-cell number on the transmission spectra and the band structures are discussed. The drawn conclusions may be useful for designing or evaluating the defected phononic crystal beams in bending wave control. In addition, our conclusions are especially potential for identifying the defect location through bending wave signals.

State and parameter estimation in a nuclear fuel pin using the extended Kalman filter

International Nuclear Information System (INIS)

Feeley, J.J.

1979-03-01

The Kalman filter is a powerful tool for the design and analysis of stochastic systems. The general nature of the method permits such diverse applications as on-line state estimation in optimal control systems, as well as state and parameter estimation applications in data analysis and system identification. However, while there have been a large number of Kalman filter applications in the aerospace industry, there have been relatively few in the nuclear industry. The report describes some initial efforts made at the Idaho National Engineering Laboratory to gain experience with the methods of Kalman filtering and to test their applicability to nuclear engineering problems. Two specific cases were considered: first, a real-time state estimation problem using a hybrid computer where the process was simulated on the analog portion of the computer, and the Kalman filter was programmed on the digital portion; second, a system identification problem where a digital extended Kalman filter program was used to estimate states and parameters in a nuclear fuel pin using data generated both by actual experiments and computer simulations. The report contains a derivation of the Kalman filter equations, a development of the mathematical model of the nuclear fuel pin, a description of the computer programs used in the analysis, and a discussion of the results obtained

7 CFR 51.1564 - External defects.

Science.gov (United States)

2010-01-01

... FRESH FRUITS, VEGETABLES AND OTHER PRODUCTS 1,2 (INSPECTION, CERTIFICATION, AND STANDARDS) United States...) in the aggregate. Artificial Coloring When unsightly or when concealing any defect causing damage or... the surface area of the potato When its severity causes a wrinkling of the skin over more than 50...

Influence of point defects on the near edge structure of hexagonal boron nitride

Science.gov (United States)

McDougall, Nicholas L.; Partridge, Jim G.; Nicholls, Rebecca J.; Russo, Salvy P.; McCulloch, Dougal G.

2017-10-01

Hexagonal boron nitride (hBN) is a wide-band-gap semiconductor with applications including gate insulation layers in graphene transistors, far-ultraviolet light emitting devices and as hydrogen storage media. Due to its complex microstructure, defects in hBN are challenging to identify. Here, we combine x-ray absorption near edge structure (XANES) spectroscopy with ab initio theoretical modeling to identify energetically favorable defects. Following annealing of hBN samples in vacuum and oxygen, the B and N K edges exhibited angular-dependent peak modifications consistent with in-plane defects. Theoretical calculations showed that the energetically favorable defects all produce signature features in XANES. Comparing these calculations with experiments, the principle defects were attributed to substitutional oxygen at the nitrogen site, substitutional carbon at the boron site, and hydrogen passivated boron vacancies. Hydrogen passivation of defects was found to significantly affect the formation energies, electronic states, and XANES. In the B K edge, multiple peaks above the major 1 s to π* peak occur as a result of these defects and the hydrogen passivated boron vacancy produces the frequently observed doublet in the 1 s to σ* transition. While the N K edge is less sensitive to defects, features attributable to substitutional C at the B site were observed. This defect was also calculated to have mid-gap states in its band structure that may be responsible for the 4.1-eV ultraviolet emission frequently observed from this material.

Fifth workshop on the role of impurities and defects in silicon device processing. Extended abstracts

Energy Technology Data Exchange (ETDEWEB)

Sopori, B.L.; Luque, A.; Sopori, B.; Swanson, D.; Gee, J.; Kalejs, J.; Jastrzebski, L.; Tan, T.

1995-08-01

This workshop dealt with engineering aspects and material properties of silicon electronic devices. Crystalline silicon growth, modeling, and properties are discussed in general and as applied to solar cells. Topics considered in discussions of silicon growth include: casting, string ribbons, Al backside contacts, ion implantation, gettering, passivation, and ultrasound treatments. Properties studies include: Electronic properties of defects and impurities, dopant and carrier concentrations, structure and bonding, nitrogen effects, degradation of bulk diffusion length, and recombination parameters. Individual papers from the workshop are indexed separately on the Energy Data Bases.

Defect modelling

International Nuclear Information System (INIS)

Norgett, M.J.

1980-01-01

Calculations, drawing principally on developments at AERE Harwell, of the relaxation about lattice defects are reviewed with emphasis on the techniques required for such calculations. The principles of defect modelling are outlined and various programs developed for defect simulations are discussed. Particular calculations for metals, ionic crystals and oxides, are considered. (UK)

The MFA ground states for the extended Bose-Hubbard model with a three-body constraint

Science.gov (United States)

Panov, Yu. D.; Moskvin, A. S.; Vasinovich, E. V.; Konev, V. V.

2018-05-01

We address the intensively studied extended bosonic Hubbard model (EBHM) with truncation of the on-site Hilbert space to the three lowest occupation states n = 0 , 1 , 2 in frames of the S = 1 pseudospin formalism. Similar model was recently proposed to describe the charge degree of freedom in a model high-T c cuprate with the on-site Hilbert space reduced to the three effective valence centers, nominally Cu1+;2+;3+. With small corrections the model becomes equivalent to a strongly anisotropic S = 1 quantum magnet in an external magnetic field. We have applied a generalized mean-field approach and quantum Monte-Carlo technique for the model 2D S = 1 system with a two-particle transport to find the ground state phase with its evolution under deviation from half-filling.

Random defect lines in conformal minimal models

International Nuclear Information System (INIS)

Jeng, M.; Ludwig, A.W.W.

2001-01-01

We analyze the effect of adding quenched disorder along a defect line in the 2D conformal minimal models using replicas. The disorder is realized by a random applied magnetic field in the Ising model, by fluctuations in the ferromagnetic bond coupling in the tricritical Ising model and tricritical three-state Potts model (the phi 12 operator), etc. We find that for the Ising model, the defect renormalizes to two decoupled half-planes without disorder, but that for all other models, the defect renormalizes to a disorder-dominated fixed point. Its critical properties are studied with an expansion in ε∝1/m for the mth Virasoro minimal model. The decay exponents X N =((N)/(2))1-((9(3N-4))/(4(m+1) 2 ))+O((3)/(m+1)) 3 of the Nth moment of the two-point function of phi 12 along the defect are obtained to 2-loop order, exhibiting multifractal behavior. This leads to a typical decay exponent X typ =((1)/(2))1+((9)/((m+1) 2 ))+O((3)/(m+1)) 3 . One-point functions are seen to have a non-self-averaging amplitude. The boundary entropy is larger than that of the pure system by order 1/m 3 . As a byproduct of our calculations, we also obtain to 2-loop order the exponent X-tilde N =N1-((2)/(9π 2 ))(3N-4)(q-2) 2 +O(q-2) 3 of the Nth moment of the energy operator in the q-state Potts model with bulk bond disorder

Lattice defects in ion-implanted aluminium studied by means of perturbed angular correlations. Pt. 1

International Nuclear Information System (INIS)

Pleiter, F.; Prasad, K.G.

1984-01-01

Migration and clustering of lattice defects after implantation of 111 In in Al and subsequent annealing at temperatures in the range from 80 to 800 K were investigated applying the DPAC technique. The effects of implantation dose, implantation temperature, laser irradiation, and plastic deformation were studied. The measurements on plastically deformed Al were complemented by positron lifetime measurements. Four In-defect clusters were observed that can be flagged by well-defined hyperfine interaction parameters, and their symmetry properties were determined by using single-crystal samples. Important conclusions are: (i) monovacancies are not trapped by In-atoms, (ii) small In-defect clusters are formed by direct trapping of divacancies and/or trivacancies, and (iii) extended In-defect clusters are very stable and anneal in the temperature range 600-700 K. Consequences for the interpretation of other measurements on dilute Al(In) alloys are discussed. (Auth.)

Modeling charged defects inside density functional theory band gaps

International Nuclear Information System (INIS)

Schultz, Peter A.; Edwards, Arthur H.

2014-01-01

Density functional theory (DFT) has emerged as an important tool to probe microscopic behavior in materials. The fundamental band gap defines the energy scale for charge transition energy levels of point defects in ionic and covalent materials. The eigenvalue gap between occupied and unoccupied states in conventional DFT, the Kohn–Sham gap, is often half or less of the experimental band gap, seemingly precluding quantitative studies of charged defects. Applying explicit and rigorous control of charge boundary conditions in supercells, we find that calculations of defect energy levels derived from total energy differences give accurate predictions of charge transition energy levels in Si and GaAs, unhampered by a band gap problem. The GaAs system provides a good theoretical laboratory for investigating band gap effects in defect level calculations: depending on the functional and pseudopotential, the Kohn–Sham gap can be as large as 1.1 eV or as small as 0.1 eV. We find that the effective defect band gap, the computed range in defect levels, is mostly insensitive to the Kohn–Sham gap, demonstrating it is often possible to use conventional DFT for quantitative studies of defect chemistry governing interesting materials behavior in semiconductors and oxides despite a band gap problem

Characterization of defects in metals by positron-annihilation spectroscopy

International Nuclear Information System (INIS)

Siegel, R.W.

1981-10-01

The application of positron-annihilation spectroscopy (PAS) to the characterization and study of defects in metals has grown rapidly and increasingly useful in recent years. Owing to the ability of the positron to annihilate from a variety of defect-trapped states in metals, PAS can yield defect-specific information which, by itself or in conjunction with more traditional experimental techniques, has already made a significant impact upon our knowledge regarding lattice defect properties in metals. This has been especially true for vacancy defets, as a result of the positron's affinity for lower-than-average electron-density regions in the metal. The physical basis for the positron annihilation techniques is presented in this paper; and the experimental techniques, lifetime, Doppler broadening, and angular correlation, are briefly described and compared with respect to the information that can be obtained from each of them. A number of examples of the application of PAS to the characterization of atomic defects and their agglomerates are presented. The particular examples, chosen from the areas of equilibrium vacancy formation and atomic-defect recovery, were selected with a view toward elucidating the particular advantages of PAS over more traditional defect-characterization techniques. Limitations of PAS are also pointed out. 98 references

Defect formation in heavily doped Si upon irradiation

International Nuclear Information System (INIS)

Gubskaya, V.I.; Kuchinskii, P.V.; Lomako, V.M.

1981-01-01

The rates of the carrier removal and radiation defect introduction into n- and p-Si in the concentration range of 10 14 to 10 17 cm -3 upon 7-MeV-electron irradiation have been studied. The spectrum of the vacancy-type defects, defining the carrier removal rate in lightly doped crystals has been found. With doping level increase the carrier removal rate grows irrespective of conductivity type, and at n 0 , p 0 > 10 17 cm -3 is close to the total displacement number. At the same time a decrease in the introduction rate of the known vacancy-type defects is observed. x It is shown that a considerable growth of the carrier removal rate is defined neither by introduction of shallow compensating centers, nor by change in the primary defect charge state. It is suggested that at high doping impurity concentrations compensation in Si is due to the introduction of complexes doping impurity-interstitial or (impurity atom-interstitial) + vacancy, which give deep levels. (author)

Diffusive, Structural, Optical, and Electrical Properties of Defects in Semiconductors

CERN Multimedia

Wagner, F E

2002-01-01

Electronic properties of semiconductors are extremely sensitive to defects and impurities that have localized electronic states with energy levels in the band gap of the semiconductor. Spectroscopic techniques like photoluminescence (PL), deep level transient spectroscopy (DLTS), or Hall effect, that are able to detect and characterize band gap states do not reveal direct information about their microscopic origin. To overcome this chemical "blindness", the present approach is to use radioactive isotopes as a tracer. Moreover, the recoil energies involved in $\\beta$ and $\\gamma$-decays can be used to create intrinsic isolated point defects (interstitials, vacancies) in a controlled way. A microscopic insight into the structure and the thermodynamic properties of complexes formed by interacting defects can be gained by detecting the hyperfine interaction between the nuclear moments of radioactive dopants and the electromagnetic fields present at the site of the radioactive nucleus. The understanding and the co...

On genealogy of defect electron states in semiconductor materials

International Nuclear Information System (INIS)

Makhmudov, A.Sh.

1984-01-01

Main factors of formation of defect electron structure in semiconductors are considered. It is concluded on the basis of analysis of papers published earlier that it is necessary to take account of two factors: long- and short-range orders i.e. the nature of the atom interaction with the several nearest neighbours as well as crystal periodicity, correctly formulated boundary conditions. One of possible wayes of the given task realization is the combination of a traditional scheme of the solid body theory- the Green function method and the semiempirical quantum-chemical method of equivalent orbitales

Chaos control of the micro-electro-mechanical resonator by using adaptive dynamic surface technology with extended state observer

International Nuclear Information System (INIS)

Luo, Shaohua; Sun, Quanping; Cheng, Wei

2016-01-01

This paper addresses chaos control of the micro-electro- mechanical resonator by using adaptive dynamic surface technology with extended state observer. To reveal the mechanism of the micro- electro-mechanical resonator, the phase diagrams and corresponding time histories are given to research the nonlinear dynamics and chaotic behavior, and Homoclinic and heteroclinic chaos which relate closely with the appearance of chaos are presented based on the potential function. To eliminate the effect of chaos, an adaptive dynamic surface control scheme with extended state observer is designed to convert random motion into regular motion without precise system model parameters and measured variables. Putting tracking differentiator into chaos controller solves the ‘explosion of complexity’ of backstepping and poor precision of the first-order filters. Meanwhile, to obtain high performance, a neural network with adaptive law is employed to approximate unknown nonlinear function in the process of controller design. The boundedness of all the signals of the closed-loop system is proved in theoretical analysis. Finally, numerical simulations are executed and extensive results illustrate effectiveness and robustness of the proposed scheme.

Irradiation of amorphous metallic alloys: defect production and local order evolution

International Nuclear Information System (INIS)

Hillairet, J.; Balanzat, E.; Audouard, A.; Jousset, J.C.

1983-06-01

This paper deals with the problem of the nature and dynamic characteristics of the ''defects'' which are produced in metallic glasses as a result of irradiation with fast particles. It discusses also the modifications in the state of local order and other structural changes brought by the creation and migration of these defects [fr

Time-domain vibrational study on defects in ion-irradiated crystal

International Nuclear Information System (INIS)

Kitajima, M.

2003-01-01

We have studied the effects of point defects on coherent phonons in ion-implanted bismuth and graphite. Ultrafast dynamics of coherent phonons and photo-generated carriers in the femtosecond time-domain have been investigated by means of pump-probe reflectivity measurements. Point defects are introduced by irradiating graphite with 5 keV He + ions. For Bi the dephasing rate of the A 1g phonon increases linearly with increasing ion dose, which is explained by the additional dephasing process of the coherent phonon originated from scattering of phonons by the defects. For graphite, introduction of the defects enhances the carrier relaxation by opening a decay channel via vacancy-states, which competes efficiently with carrier-phonon scattering. The coherent acoustic phonon relaxation is also accelerated due to an additional scattering by defects. The linear fluence-dependence of the decay rate is understood as scattering of propagating acoustic phonon by single vacancies. (author)

Finite volume form factors in the presence of integrable defects

International Nuclear Information System (INIS)

Bajnok, Z.; Buccheri, F.; Hollo, L.; Konczer, J.; Takacs, G.

2014-01-01

We developed the theory of finite volume form factors in the presence of integrable defects. These finite volume form factors are expressed in terms of the infinite volume form factors and the finite volume density of states and incorporate all polynomial corrections in the inverse of the volume. We tested our results, in the defect Lee–Yang model, against numerical data obtained by truncated conformal space approach (TCSA), which we improved by renormalization group methods adopted to the defect case. To perform these checks we determined the infinite volume defect form factors in the Lee–Yang model exactly, including their vacuum expectation values. We used these data to calculate the two point functions, which we compared, at short distance, to defect CFT. We also derived explicit expressions for the exact finite volume one point functions, which we checked numerically. In all of these comparisons excellent agreement was found

Kaolinite: Defect defined material properties – A soft X-ray and first principles study of the band gap

Energy Technology Data Exchange (ETDEWEB)

Pietzsch, A., E-mail: annette.pietzsch@helmholtz-berlin.de [Institute for Methods and Instrumentation in Synchrotron Radiation Research G-ISRR, Helmholtz-Zentrum für Materialien und Energie GmbH, Albert-Einstein-Str. 15, 12489 Berlin (Germany); Nisar, J. [Pakistan Atomic Energy Commission (PAEC), P.O. Box 2151, Islamabad (Pakistan); Jämstorp, E. [Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Gråsjö, J. [Department of Pharmacy, Uppsala University, Box 580, 75123 Uppsala (Sweden); Århammar, C. [Coromant R& D, S-126 80 Stockholm (Sweden); Ahuja, R.; Rubensson, J.-E. [Department of Physics and Astronomy, Uppsala University, Box 516, 751 20 Uppsala (Sweden)

2015-07-15

Highlights: • The respective electronic structure of synthetic and natural kaolinite is compared. • The size of the band gap and thus many important material properties are defined by defect states in the band gap. • The oxygen-based defect states are identified and analyzed. • The band gap of kaolinite decreases significantly due to the forming of defects. - Abstract: By combining X-ray absorption spectroscopy and first principles calculations we have determined the electronic structure of synthetic and natural kaolinite as a model system for engineered and natural clay materials. We have analyzed defect states in the band gap and find that both natural and synthetic kaolinite contain defects where oxygen replaces hydrogen in one of the Al (0 0 1)-hydroxyl groups of the kaolinite clay sheets. The band gap of both synthetic and natural kaolinite is found to decrease by about 3.2 eV as this defect is formed.

Kaolinite: Defect defined material properties – A soft X-ray and first principles study of the band gap

International Nuclear Information System (INIS)

Pietzsch, A.; Nisar, J.; Jämstorp, E.; Gråsjö, J.; Århammar, C.; Ahuja, R.; Rubensson, J.-E.

2015-01-01

Highlights: • The respective electronic structure of synthetic and natural kaolinite is compared. • The size of the band gap and thus many important material properties are defined by defect states in the band gap. • The oxygen-based defect states are identified and analyzed. • The band gap of kaolinite decreases significantly due to the forming of defects. - Abstract: By combining X-ray absorption spectroscopy and first principles calculations we have determined the electronic structure of synthetic and natural kaolinite as a model system for engineered and natural clay materials. We have analyzed defect states in the band gap and find that both natural and synthetic kaolinite contain defects where oxygen replaces hydrogen in one of the Al (0 0 1)-hydroxyl groups of the kaolinite clay sheets. The band gap of both synthetic and natural kaolinite is found to decrease by about 3.2 eV as this defect is formed

Atomic scale simulations of hydrogen implantation defects in hydrogen implanted silicon - smart Cut technology

International Nuclear Information System (INIS)

Bilteanu, L.

2010-12-01

The topic of this thesis is related to the implantation step of the SmartCut TM technology. This technology uses hydrogen in order to transfer silicon layers on insulating substrates. The transfer is performed through a fracture induced by the formation of bidimensional defects well known in literature as 'platelets'. More exactly, we have studied within this thesis work the defects appearing in the post implant state and the evolution of the implantation damage towards a state dominated by platelets. The study is organised into two parts: in the first part we present the results obtained by atomic scale simulations while in the second part we present an infrared spectroscopy study of the evolution of defects concentrations after annealing at different temperatures. The atomic scale simulations have been performed within the density functional theory and they allowed us to compute the formation energies and the migration and recombination barriers. The defects included in our study are: the atomic and diatomic interstitials, the hydrogenated vacancies and multi-vacancies and the several platelets models. The obtained energies allowed us to build a stability hierarchy for these types of defects. This scheme has been confronted with some infrared analysis on hydrogen implanted silicon samples (37 keV) in a sub-dose regime which does not allow usually the formation of platelets during the implantation step. The analysis of the infrared data allowed the detailed description of the defects concentration based on the behaviour of peaks corresponding to the respective defects during annealing. The comparison between these evolutions and the energy scheme obtained previously allowed the validation of an evolution scenario of defects towards the platelet state. (author)

Defects and defect generation in oxide layer of ion implanted silicon-silicon dioxide structures

CERN Document Server

Baraban, A P

2002-01-01

One studies mechanism of generation of defects in Si-SiO sub 2 structure oxide layer as a result of implantation of argon ions with 130 keV energy and 10 sup 1 sup 3 - 3.2 x 10 sup 1 sup 7 cm sup - sup 2 doses. Si-SiO sub 2 structures are produced by thermal oxidation of silicon under 950 deg C temperature. Investigations were based on electroluminescence technique and on measuring of high-frequency volt-farad characteristics. Increase of implantation dose was determined to result in spreading of luminosity centres and in its maximum shifting closer to boundary with silicon. Ion implantation was shown, as well, to result in increase of density of surface states at Si-SiO sub 2 interface. One proposed model of defect generation resulting from Ar ion implantation into Si-SiO sub 2

Optical properties of a defective one-dimensional photonic crystal containing graphene nanaolayers

International Nuclear Information System (INIS)

Entezar, S. Roshan; Saleki, Z.; Madani, A.

2015-01-01

The transmission properties of a defective one-dimensional photonic crystal containing graphene nanolayers have been investigated using the transfer matrix method. It is shown that two kinds of the defect modes can be found in the band gaps of the structure. One kind is the traditional defect mode which is created in the Bragg gaps of the structure and is due to the breaking of the periodicity of the dielectric lattice. The other one is created in the graphene induced band gap. Such a defect mode which we call it the graphene induced defect mode is due to the breaking of the periodicity of the graphene lattice. However, our investigations reveal that only in the case of wide defect layers one can obtain the graphene induced defect modes. The effects of many parameters such as the incident angle, the state of polarization and the chemical potential of the graphene nanolayers on the properties of the graphene induced defect modes are discussed. Moreover, the possibility of external control of the graphene induced defect modes using a gate voltage is shown.

Defect engineering in 1D Ti-W oxide nanotube arrays and their correlated photoelectrochemical performance.

Science.gov (United States)

Abdelhafiz, Ali A; Ganzoury, Mohamed A; Amer, Ahmad W; Faiad, Azza A; Khalifa, Ahmed M; AlQaradawi, Siham Y; El-Sayed, Mostafa A; Alamgir, Faisal M; Allam, Nageh K

2018-04-18

Understanding the nature of interfacial defects of materials is a critical undertaking for the design of high-performance hybrid electrodes for photocatalysis applications. Theoretical and computational endeavors to achieve this have touched boundaries far ahead of their experimental counterparts. However, to achieve any industrial benefit out of such studies, experimental validation needs to be systematically undertaken. In this sense, we present herein experimental insights into the synergistic relationship between the lattice position and oxidation state of tungsten ions inside a TiO2 lattice, and the respective nature of the created defect states. Consequently, a roadmap to tune the defect states in anodically-fabricated, ultrathin-walled W-doped TiO2 nanotubes is proposed. Annealing the nanotubes in different gas streams enabled the engineering of defects in such structures, as confirmed by XRD and XPS measurements. While annealing under hydrogen stream resulted in the formation of abundant Wn+ (n < 6) ions at the interstitial sites of the TiO2 lattice, oxygen- and air-annealing induced W6+ ions at substitutional sites. EIS and Mott-Schottky analyses indicated the formation of deep-natured trap states in the hydrogen-annealed samples, and predominantly shallow donating defect states in the oxygen- and air-annealed samples. Consequently, the photocatalytic performance of the latter was significantly higher than those of the hydrogen-annealed counterparts. Upon increasing the W content, photoelectrochemical performance deteriorated due to the formation of WO3 crystallites that hindered charge transfer through the photoanode, as evident from the structural and chemical characterization. To this end, this study validates the previous theoretical predictions on the detrimental effect of interstitial W ions. In addition, it sheds light on the importance of defect states and their nature for tuning the photoelectrochemical performance of the investigated materials.

Attenuation and immunogenicity of host-range extended modified vaccinia virus Ankara recombinants.

Science.gov (United States)

Melamed, Sharon; Wyatt, Linda S; Kastenmayer, Robin J; Moss, Bernard

2013-09-23

Modified vaccinia virus Ankara (MVA) is being widely investigated as a safe smallpox vaccine and as an expression vector to produce vaccines against other infectious diseases and cancer. MVA was isolated following more than 500 passages in chick embryo fibroblasts and suffered several major deletions and numerous small mutations resulting in replication defects in human and most other mammalian cells as well as severe attenuation of pathogenicity. Due to the host range restriction, primary chick embryo fibroblasts are routinely used for production of MVA-based vaccines. While a replication defect undoubtedly contributes to safety of MVA, it is worth considering whether host range and attenuation are partially separable properties. Marker rescue transfection experiments resulted in the creation of recombinant MVAs with extended mammalian cell host range. Here, we characterize two host-range extended rMVAs and show that they (i) have acquired the ability to stably replicate in Vero cells, which are frequently used as a cell substrate for vaccine manufacture, (ii) are severely attenuated in immunocompetent and immunodeficient mouse strains following intranasal infection, (iii) are more pathogenic than MVA but less pathogenic than the ACAM2000 vaccine strain at high intracranial doses, (iv) do not form lesions upon tail scratch in mice in contrast to ACAM2000 and (v) induce protective humoral and cell-mediated immune responses similar to MVA. The extended host range of rMVAs may be useful for vaccine production. Published by Elsevier Ltd.

Understanding defect distributions in polythiophenes via comparison of regioregular and regiorandom species

Energy Technology Data Exchange (ETDEWEB)

Muntasir, Tanvir, E-mail: tanvir@iastate.edu, E-mail: sumitc@iastate.edu [Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011 (United States); Chaudhary, Sumit, E-mail: tanvir@iastate.edu, E-mail: sumitc@iastate.edu [Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011 (United States); Department of Materials Science and Engineering, Iowa State University, Ames, Iowa 50011 (United States)

2015-11-28

Organic photovoltaics (OPVs) are regarded as promising for solar-electric conversion with steadily improving power conversion efficiencies. For further progress, it is crucial to understand and mitigate defect states (traps) residing in the band-gap of OPV materials. In this work, using capacitance measurements, we analyzed two major bands in the density of states (DOS) energy spectra of defects in poly(3-hexylthiophene) (P3HT); regio-regular and regio-random species of P3HT were compared to elucidate the role of morphological disorder. To accurately interpret the obtained DOS profile, trap emission prefactors and activation energy were extracted from temperature dependent capacitance-frequency measurements, while doping, Fermi energy, built-in voltage, and energy levels of the defects were extracted from capacitance-voltage measurements. We identified that the lower energy band—misinterpreted in literature as a defect distribution—stems from free carrier response. The higher energy defect distribution band for regio-random P3HT was an order of magnitude higher than region-regular P3HT, thus stemming from morphological disorder. Impedance spectroscopy was also employed for further comparison of the two P3HT species.

Understanding defect distributions in polythiophenes via comparison of regioregular and regiorandom species

International Nuclear Information System (INIS)

Muntasir, Tanvir; Chaudhary, Sumit

2015-01-01

Organic photovoltaics (OPVs) are regarded as promising for solar-electric conversion with steadily improving power conversion efficiencies. For further progress, it is crucial to understand and mitigate defect states (traps) residing in the band-gap of OPV materials. In this work, using capacitance measurements, we analyzed two major bands in the density of states (DOS) energy spectra of defects in poly(3-hexylthiophene) (P3HT); regio-regular and regio-random species of P3HT were compared to elucidate the role of morphological disorder. To accurately interpret the obtained DOS profile, trap emission prefactors and activation energy were extracted from temperature dependent capacitance-frequency measurements, while doping, Fermi energy, built-in voltage, and energy levels of the defects were extracted from capacitance-voltage measurements. We identified that the lower energy band—misinterpreted in literature as a defect distribution—stems from free carrier response. The higher energy defect distribution band for regio-random P3HT was an order of magnitude higher than region-regular P3HT, thus stemming from morphological disorder. Impedance spectroscopy was also employed for further comparison of the two P3HT species

DFT+U study of defects in bulk rutile TiO₂

DEFF Research Database (Denmark)

Stausholm-Møller, Jess; Kristoffersen, Henrik Høgh; Hinnemann, Berit

2010-01-01

phase of bulk titanium dioxide. We find that by applying a sufficiently large value for the Hubbard-U parameter of the Ti 3d states, the excess electrons localize spatially at the Ti sites and appear as states in the band gap. At U = 2.5 eV, the position in energy of these gap states are in fair...... is that regardless of which structural defect is the origin of the gap states, at U = 2.5 eV, these states are found to have their mean energies within a few hundredths of an eV from 0.94 eV below the conduction band minimum.......We present a systematic study of electronic gap states in defected titania using our implementation of the Hubbard-U approximation in the grid-based projector-augmented wave density functional theory code, GPAW. The defects considered are Ti interstitials, O vacancies, and H dopants in the rutile...

Fuel defect detection, localization and removal in Bruce Power units 3 through 8

International Nuclear Information System (INIS)

Stone, R.; Armstrong, J.; Iglesias, F.; Oduntan, R.; Lewis, B.

2005-01-01

Fuel element defects are occurring in Bruce 'A' and Bruce 'B' Units. A root-cause investigation is ongoing, however, a solution is not yet in-hand. Fuel defect management efforts have been undertaken, therefore, in the interim. Fuel defect management tools are in-place for all Bruce Units. These tools can be categorized as analysis-based or operations-based. Analysis-based tools include computer codes used primarily for fuel defect characterization, while operations-based tools include Unit-specific delayed-neutron ('DN') monitoring systems and gaseous fission product ('GFP') monitoring systems. Operations-based tools are used for fuel defect detection, localization and removal activities. Fuel and Physics staff use defect detection, localization and removal methodologies and guidelines to disposition fuel defects. Methodologies are 'standardized' or 'routine' procedures for implementing analysis-based and operations-based tools to disposition fuel defects during Unit start-up operation and during operation at high steady-state power levels. Guidelines at present serve to supplement fuel defect management methodologies during Unit power raise. (author)

Dirichlet topological defects

International Nuclear Information System (INIS)

Carroll, S.M.; Trodden, M.

1998-01-01

We propose a class of field theories featuring solitonic solutions in which topological defects can end when they intersect other defects of equal or higher dimensionality. Such configurations may be termed open-quotes Dirichlet topological defects,close quotes in analogy with the D-branes of string theory. Our discussion focuses on defects in scalar field theories with either gauge or global symmetries, in 3+1 dimensions; the types of defects considered include walls ending on walls, strings on walls, and strings on strings. copyright 1998 The American Physical Society

Extraction of the defect density of states in microcrystalline silicon from experimental results and simulation studies

International Nuclear Information System (INIS)

Tibermacine, T.; Ledra, M.; Ouhabab, N.; Merazga, A.

2015-01-01

The constant photocurrent method in the ac-mode (ac-CPM) is used to determine the defect density of states (DOS) in hydrogenated microcrystalline silicon (μc-Si:H) prepared by very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD). The absorption coefficient spectrum (ac-α(hv)), is measured under ac-CPM conditions at 60 Hz. The measured ac-α(hv) is converted by the CPM spectroscopy into a DOS distribution covering a portion in the lower energy range of occupied states. We have found that the density of valence band-tail states falls exponentially towards the gap with a typical band-tail width of 63 meV. Independently, computer simulations of the ac-CPM are developed using a DOS model that is consistent with the measured ac-α(hv) in the present work and a previously measured transient photocurrent (TPC) for the same material. The DOS distribution model suggested by the measurements in the lower and in the upper part of the energy-gap, as well as by the numerical modelling in the middle part of the energy-gap, coincide reasonably well with the real DOS distribution in hydrogenated microcrystalline silicon because the computed ac-α(hv) is found to agree satisfactorily with the measured ac-α(hv). (paper)

Multiple-level defect species evaluation from average carrier decay

Science.gov (United States)

Debuf, Didier

2003-10-01

An expression for the average decay is determined by solving the the carrier continuity equations, which include terms for multiple defect recombination. This expression is the decay measured by techniques such as the contactless photoconductance decay method, which determines the average or volume integrated decay. Implicit in the above is the requirement for good surface passivation such that only bulk properties are observed. A proposed experimental configuration is given to achieve the intended goal of an assessment of the type of defect in an n-type Czochralski-grown silicon semiconductor with an unusually high relative lifetime. The high lifetime is explained in terms of a ground excited state multiple-level defect system. Also, minority carrier trapping is investigated.

Dark matter from decaying topological defects

International Nuclear Information System (INIS)

Hindmarsh, Mark; Kirk, Russell; West, Stephen M.

2014-01-01

We study dark matter production by decaying topological defects, in particular cosmic strings. In topological defect or ''top-down'' (TD) scenarios, the dark matter injection rate varies as a power law with time with exponent p−4. We find a formula in closed form for the yield for all p < 3/2, which accurately reproduces the solution of the Boltzmann equation. We investigate two scenarios (p = 1, p = 7/6) motivated by cosmic strings which decay into TeV-scale states with a high branching fraction into dark matter particles. For dark matter models annihilating either by s-wave or p-wave, we find the regions of parameter space where the TD model can account for the dark matter relic density as measured by Planck. We find that topological defects can be the principal source of dark matter, even when the standard freeze-out calculation under-predicts the relic density and hence can lead to potentially large ''boost factor'' enhancements in the dark matter annihilation rate. We examine dark matter model-independent limits on this scenario arising from unitarity and discuss example model-dependent limits coming from indirect dark matter search experiments. In the four cases studied, the upper bound on Gμ for strings with an appreciable channel into TeV-scale states is significantly more stringent than the current Cosmic Microwave Background limits

Ab initio study of native defects in SnO under strain

KAUST Repository

Bianchi Granato, Danilo

2014-04-01

Tin monoxide (SnO) has promising properties to be applied as a p-type semiconductor in transparent electronics. To this end, it is necessary to understand the behaviour of defects in order to control them. We use density functional theory to study native defects of SnO under tensile and compressive strain. We show that Sn vacancies are less stable under tension and more stable under compression, irrespectively of the charge state. In contrast, O vacancies behave differently for different charge states. It turns out that the most stable defect under compression is the +1 charged O vacancy in an Sn-rich environment and the charge neutral O interstitial in an O-rich environment. Therefore, compression can be used to transform SnO from a p-type into either an n-type or an undoped semiconductor. Copyright © EPLA, 2014.

The pinning property of Bi-2212 single crystals with columnar defects

International Nuclear Information System (INIS)

Okamura, Kazunori; Kiuchi, Masaru; Otabe, Edmund Soji; Yasuda, Takashi; Matsushita, Teruo; Okayasu, Satoru

2004-01-01

It is qualitatively understood that the condensation energy density in oxide superconductors, which is one of the essential parameters for determining their pinning strength, becomes large with increasing dimensionality of the superconductor. However, the condensation energy density has not yet been evaluated quantitatively. Its value can be estimated from the elementary pinning force of a known defect. Columnar defects created by heavy ion irradiation are candidates for being such defects. That is, the size and number density of columnar defects can be given. In addition, it is known that two-dimensional vortices like those in Bi-2212 are forced into three-dimensional states by these defects in a magnetic field parallel to the defects. Thus, the condensation energy density can be estimated from the pinning property of the columnar defects even for two-dimensional superconductors. A similar analysis was performed also for three-dimensional Y-123. A discussion is given of the relationship between the condensation energy density and the anisotropy parameter estimated from measurements of anisotropic resistivity and peak field

A study on microstructures and extended defects in Ni- and Co-base superalloys. Development and application of advanced TEM techniques

Energy Technology Data Exchange (ETDEWEB)

Mueller, Julian

2016-04-21

To improve the efficiency of stationary gas turbines and air craft jet engines, it is crucial to increase the maximum temperature capabilities of single crystalline superalloys by appropriate alloy design and microstructure tuning. The mechanical properties of superalloys are largely influenced by the physical constitution of the microstructure. To develop a better understanding of fundamental aspects of creep deformation, like the stress states, defect structures and other degradation processes, it is necessary to employ scale-bridging characterization. In the present work, Ni- and Co-based superalloys are investigated by a series of advanced transmission electron microscopy techniques and by the application of specifically developed characterization methods to identify dominating processes on atomic scale and hence to make a direct correlation to the macroscopic creep behavior. For instance, the misfit between γ and γ' in the initial microstructure is of great importance, since it strongly influences the rafting process and the interfacial dislocation network. To address the stress state, on the one hand misfit measurements in undeformed samples are conducted and are directly compared to finite-element simulations. On the other hand, deformed samples are investigated to assess the influence of an initial rafting process and the formation of an interface dislocation network. For this, characterization methods are used which are based on the evaluation of atomically resolved images and on electron diffraction. Moreover, the temperature dependency of the misfit and of the microstructure stability is specifically investigated for different Co-base alloys in in situ heating experiments. The characterization of defect structures in Ni-base superalloys after creep deformation builds the second pillar of this work. Specific cutting processes of superdislocations are studied to elucidate which atomic processes take place. A series of left angle 100 right angle and

Intrinsic defects in silicon carbide for spin-based quantum applications

International Nuclear Information System (INIS)

Vladimir Dyakonov

2014-01-01

We present a set of experiments demonstrating a high potential of atomic-scale defects in SiC for various spin-based applications, including quantum information processing and photonics. In particular, we show that defect spn qubits in SiC can be addressed, manipulated and selectively read out by means of the double radio-optical resonance. The situation reminds the one in the atomic spectroscopy, where the atoms have their individual extremely sharp optical and RF resonance fingerprints. We also generate inverse population in some intrinsic defects, resulting in stimulated microwave emission at RT. This is a crucial step towards implementation of highly-integrable solid-state masers and extraordinarily sensitive microwave detectors. As an application example, we incorporate intrinsic defects in LED structures and show that they can be electrically driven at room temperature. (author)

Interacting Frenkel defects at high concentration and the superionic transition in fluorite crystals

International Nuclear Information System (INIS)

March, N.H.; Tosi, M.P.

1980-11-01

A spherical cell model is proposed to account for the explicit concentration dependence of Frenkel defects in an ionic system. In the model, the linearized Debye-Hueckel equation is soluble exactly, subject to the boundary condition that the electric field is zero at the cell boundary R, related to the concentration α of defects by R proportional to csup(-1/3). This screened field is used to calculate the chemical potential, which in turn leads to a condition for the instability of the interacting defect assembly. This condition allows one to calculate the enhancement of the concentration of defects above its Arrhenius value at the point of instability in terms of (a) the critical concentration csub(c), (b) a/R, where a is the radius of defect and (c) the Debye-Hueckel screening length kappasub(c). It is clear from the cell model that this enhancement factor is reduced somewhat in the relevant range of parameters in some of the fluorites from its value in extended Debye-Hueckel theory. It is anticipated that the instability discussed here should afford an upper bound to csub(c) at the superionic transition, within the range of validity of the model. The excess he at capacity csub(p) is also discussed briefly. (author)

Reconstruction of mandibular defects using nonvascularized autogenous bone graft in Nigerians

Directory of Open Access Journals (Sweden)

Kizito Chioma Ndukwe

2014-01-01

Full Text Available Objectives: The aim of this study is to evaluate the success rate and complications of mandibular reconstruction with nonvascularized bone graft in Ile-Ife, Nigeria. Patients and Methods: A total of 25 patients who underwent reconstruction of mandibular discontinuity defects between January 2003 and February 2012, at the Obafemi Awolowo University Teaching Hospitals Complex, Ile-Ife constituted the study sample. Relevant information was retrieved from the patients′ records. This information include patients′ demographics (age and sex as well as the type of mandibular defect, cause of the defect, type of mandibular resection done, source of the bone graft used, and the method of graft immobilization. Morbidity associated with the graft procedures were assessed by retrieving information on graft failures, length of hospital stay following surgery, rehabilitation device used and associated graft donor and recipient site complications. Result: There were 12 males and 13 females with a male:female ratio was 1:1.1. The age of the patients ranged from 13 to 73 years with a mean age for males 32.7 ± standard deviation (SD 12.9 and for females 35.0 ± SD 17.1. Jaw defect was caused by resection for tumours and other jaw pathologies in 92% of cases. Complete symphyseal involvement defect was the most common defect recorded 11 (44%. Reconstruction with nonvascularized rib graft accounted for 68% of cases while iliac crest graft was used in 32% of the patients. Successful take of the grafts was recorded in 22 patients while three cases failed. Wound dehiscence (two patients and postoperative wound infection (eight patients were the most common complications recorded. Conclusion: The use of nonvascularized graft is still relevant in the reconstruction of large mandibular defects caused by surgical ablation of benign conditions in Nigerians. Precise surgical planning and execution, extended antibiotic therapy, and meticulous postoperative care

Mirror-smooth surfaces and repair of defects in superconducting RF cavities by mechanical polishing

Energy Technology Data Exchange (ETDEWEB)

Cooper, C. A. [Fermilab; Cooley, L. D. [Fermilab

2012-11-22

Mechanical techniques for polishing the inside surface of niobium superconducting radio-frequency (SRF) cavities have been systematically explored. By extending known techniques to fine polishing, mirror-like finishes were produced, with <15 nm RMS (root mean square) roughness over 1 mm2 scan area. This is an order of magnitude less than the typical roughness produced by the electropolishing of niobium cavities. The extended mechanical polishing (XMP) process was applied to several SRF cavities which exhibited equator defects that caused quench at <20 MV m-1 and were not improved by further electropolishing. Cavity optical inspection equipment verified the complete removal of these defects, and minor acid processing, which dulled the mirror finish, restored performance of the defective cells to the high gradients and quality factors measured for adjacent cells when tested with other harmonics. This innate repair feature of XMP could be used to increase manufacturing yield. Excellent superconducting properties resulted after initial process optimization, with quality factor Q of 3 × 1010 and accelerating gradient of 43 MV m-1 being attained for a single-cell TESLA cavity, which are both close to practical limits. Several repaired nine-cell cavities also attained Q > 8 × 109 at 35 MV m-1, which is the specification for the International Linear Collider. Future optimization of the process and pathways for eliminating requirements for acid processing are also discussed.

Defects in electron irradiated vitreous SiO2 probed by positron annihiliation

International Nuclear Information System (INIS)

Uedono, Akira; Tanigawa, Shoichiro; Kawano, Takao; Itoh, Hisayoshi

1994-01-01

Defects in 3 MeV electron irradiated vitreous SiO 2 (v-SiO 2 ) were probed by the positron annihilation technique. For unirradiated v-SiO 2 specimens, almost all positrons were found to annihilate from positronium (Ps) states. This high formation probability of Ps was attributed to the trapping of positrons by open-space defects. The formation probability of Ps was decreased by the electron irradiation. The observed inhibition of the Ps formation was attributed to the trapping of positrons by point defects introduced and/or activated by the irradiation. From measurements of the lifetime distribution of Ps, it was found that, by the electron irradiation, the mean size of open-space defects was decreased and the size distribution of such defects was broadened. (Author)

Defect forces, defect couples and path integrals in fracture mechanics

International Nuclear Information System (INIS)

Roche, R.L.

1979-07-01

In this work, it is shown that the path integrals can be introduced without any reference to the material behavior. The method is based on the definition in a continuous medium of a set of vectors and couples having the dimension of a force or a moment. More precisely, definitions are given of volume defect forces, surface defect forces, volume defect couples, and surface defect couples. This is done with the help of the stress working variation of a particule moving through the solid. The most important result is: the resultant of all the defect forces included in a volume V is the J integral on the surface surrounding V and the moment resultant is the L integral. So these integrals are defined without any assumption on the material constitutive equation. Another result is the material form of the virtual work principle - defect forces are acting like conventional forces in the conventional principles of virtual work. This lead to the introduction of the energy momentum tensor and of the associated couple stress. Application of this method is made to fracture mechanics in studying the defect forces distribution around a crack [fr

Nanocarbon: Defect Architectures and Properties

Science.gov (United States)

Vuong, Amanda

V6 hexavacancy variant, where six sp3 carbon atoms sit midway between two carbon layers and bond to both, is substantially more stable than any other vacancy aggregate in AA stacked layers. Chapter 5 presents the results of ab initio DFT calculations performed to investigate the wormhole and mezzanine defect that were identified in chapter 4 and the ramp defect discovered by Trevethan et al.. DFT calculations were performed on these defects in twisted bilayer graphene. From the investigation of vacancy complexes in twisted bilayer graphene, it is found that vacancy complexes are unstable in the twisted region and are more favourable in formation energy when the stacking arrangement is close to AA or AB stacking. It has also been discovered that the ramp defect is more stable in the twisted bilayer graphene compared to the mezzanine defect. Chapter 6 presents the results of ab initio DFT calculations performed to investigate a form of extending defect, prismatic edge dislocation. Suarez-Martinez et al.'s research suggest the armchair core is disconnected from any other layer, whilst the zigzag core is connected. In the investigation here, the curvature of the mezzanine defect allows it to swing between the armchair, zigzag and Klein in the AA stacking. For the AB stacking configuration, the armchair and zigzag core are connected from any other layer. Chapter 7 present results of MD simulations using the adaptive intermolecular reactive empirical bond order (AIREBO) potential to investigate the dimensional change of graphite due to the formation of vacancies present in a single crystal. It has been identified that there is an expansion along the c-axis, whilst a contraction along the a- and b- axes due to the coalescence of vacancy forming in-plane and between the layers. The results here are in good agreement with experimental studies of low temperature irradiation. The final chapter gives conclusions to this work.

Neural Tube Defects

Science.gov (United States)

Neural tube defects are birth defects of the brain, spine, or spinal cord. They happen in the ... that she is pregnant. The two most common neural tube defects are spina bifida and anencephaly. In ...

Real-world experience of women using extended-cycle vs monthly-cycle combined oral contraception in the United States: the National Health and Wellness Survey.

Science.gov (United States)

Nappi, Rossella E; Lete, Iñaki; Lee, Lulu K; Flores, Natalia M; Micheletti, Marie-Christine; Tang, Boxiong

2018-01-18

The real-world experience of women receiving extended-cycle combined oral contraception (COC) versus monthly-cycle COC has not been reported. Data were from the United States 2013 National Health and Wellness Survey. Eligible women (18-50 years old, premenopausal, without hysterectomy) currently using extended-cycle COC (3 months between periods) were compared with women using monthly-cycle COC. Treatment satisfaction (1 "extremely dissatisfied" to 7 "extremely satisfied"), adherence (8-item Morisky Medication Adherence Scale © ), menstrual cycle-related symptoms, health-related quality of life (HRQOL) and health state utilities (Medical Outcomes Short Form Survey-36v2®), depression (9-item Patient Health Questionnaire), sleep difficulties, Work Productivity and Activity Impairment-General Health, and healthcare resource use were assessed using one-way analyses of variance, chi-square tests, and generalized linear models (adjusted for covariates). Participants included 260 (6.7%) women using extended-cycle and 3616 (93.3%) using monthly-cycle COC. Women using extended-cycle COC reported significantly higher treatment satisfaction (P = 0.001) and adherence (P = 0.04) and reduced heavy menstrual bleeding (P = 0.029). A non-significant tendency toward reduced menstrual pain (39.5% versus 47.3%) and menstrual cycle-related symptoms (40.0% versus 48.7%) was found in women using extended-cycle versus monthly-cycle COC. Significantly more women using extended-cycle COC reported health-related diagnoses, indicating preferential prescription for extended-cycle COC among women reporting more health problems. Consistent with this poorer health, more women using extended-cycle COC reported fatigue, headache, and activity impairment (P values cycle COC as a valuable treatment option with high satisfaction, high adherence, and reduced heavy menstrual bleeding.

Combining DFT, Cluster Expansions, and KMC to Model Point Defects in Alloys

Science.gov (United States)

Modine, N. A.; Wright, A. F.; Lee, S. R.; Foiles, S. M.; Battaile, C. C.; Thomas, J. C.; van der Ven, A.

In an alloy, defect energies are sensitive to the occupations of nearby atomic sites, which leads to a distribution of defect properties. When radiation-induced defects diffuse from their initially non-equilibrium locations, this distribution becomes time-dependent. The defects can become trapped in energetically favorable regions of the alloy leading to a diffusion rate that slows dramatically with time. Density Functional Theory (DFT) allows the accurate determination of ground state and transition state energies for a defect in a particular alloy environment but requires thousands of processing hours for each such calculation. Kinetic Monte-Carlo (KMC) can be used to model defect diffusion and the changing distribution of defect properties but requires energy evaluations for millions of local environments. We have used the Cluster Expansion (CE) formalism to ``glue'' together these seemingly incompatible methods. The occupation of each alloy site is represented by an Ising-like variable, and products of these variables are used to expand quantities of interest. Once a CE is fit to a training set of DFT energies, it allows very rapid evaluation of the energy for an arbitrary configuration, while maintaining the accuracy of the underlying DFT calculations. These energy evaluations are then used to drive our KMC simulations. We will demonstrate the application of our DFT/MC/KMC approach to model thermal and carrier-induced diffusion of intrinsic point defects in III-V alloys. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under Contract DE.

Thermal equilibrium defects in anthracene probed by positron annihilation

International Nuclear Information System (INIS)

Uedono, Akira; Tanigawa, Shoichiro; Tachibana, Masaru; Shimizu, Mikio; Satoh, Masaaki; Kojima, Kenichi; Ishibashi, Shoji; Kawano, Takao.

1996-01-01

Defects in anthracene were investigated by the positron annihilation technique. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured in the temperature range between 305 K and 516 K. The lifetime of positrons annihilated from the delocalized state was determined to be 0.306 ns around room temperature. Below the melting point, the observed temperature dependence of the line shape parameter S was explained assuming the formation energy of thermal equilibrium defects was 1 eV. Above the melting point, the pick-off annihilation of ortho-positronium in open spaces was observed, where the size of these spaces was estimated to be 0.2 nm 3 . The annihilation of positrons from the self-trapped state was also discussed. (author)

Thermal equilibrium defects in anthracene probed by positron annihilation

Energy Technology Data Exchange (ETDEWEB)

Uedono, Akira; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Tachibana, Masaru; Shimizu, Mikio; Satoh, Masaaki; Kojima, Kenichi; Ishibashi, Shoji; Kawano, Takao

1996-06-01

Defects in anthracene were investigated by the positron annihilation technique. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured in the temperature range between 305 K and 516 K. The lifetime of positrons annihilated from the delocalized state was determined to be 0.306 ns around room temperature. Below the melting point, the observed temperature dependence of the line shape parameter S was explained assuming the formation energy of thermal equilibrium defects was 1 eV. Above the melting point, the pick-off annihilation of ortho-positronium in open spaces was observed, where the size of these spaces was estimated to be 0.2 nm{sup 3}. The annihilation of positrons from the self-trapped state was also discussed. (author)

Discriminating a deep defect from shallow acceptors in supercell calculations: gallium antisite in GaAs

Science.gov (United States)

Schultz, Peter

To make reliable first principles predictions of defect energies in semiconductors, it is crucial to discriminate between effective-mass-like defects--for which existing supercell methods fail--and deep defects--for which density functional theory calculations can yield reliable predictions of defect energy levels. The gallium antisite GaAs is often associated with the 78/203 meV shallow double acceptor in Ga-rich gallium arsenide. Within a framework of level occupation patterns, analyses of structure and spin stabilization can be used within a supercell approach to distinguish localized deep defect states from shallow acceptors such as BAs. This systematic analysis determines that the gallium antisite is inconsistent with a shallow state, and cannot be the 78/203 shallow double acceptor. The properties of the Ga antisite in GaAs are described, predicting that the Ga antisite is a deep double acceptor and has two donor states, one of which might be accidentally shallow. -- Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Company, for the U.S. Department of Energy's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

Field-ion microscope studies of the defect structure of the primary state of damage of irradiated metals

International Nuclear Information System (INIS)

Seidman, D.N.

1975-01-01

A review is presented of field ion microscope applications in studies of point defect distribution in irradiated metals. FIM results on the primary state of radiation damage in neutron and ion-irradiated iridium and tungsten, at both room-temperature and 78 0 K, showed that it consists of: (1) isolated vacancies; (2) depleted zones; (3) compact vacancy clusters of voids; and (4) dislocation loops. The fraction of vacancies stored in the dislocation loops represented a small fraction of the total vacancy concentration; in the case of tungsten it was approximately 10 percent. These FIM observations provide a simple explanation of the low yield-factor, determined by transmission electron microscopy, for a number of ion-irradiated metals

Coarse-grained molecular dynamics modeling of the kinetics of lamellar BCP defect annealing

Science.gov (United States)

Peters, Andrew J.; Lawson, Richard A.; Nation, Benjamin D.; Ludovice, Peter J.; Henderson, Clifford L.

2015-03-01

Directed self-assembly of block copolymers (BCPs) is a process that has received great interest in the field of nanomanufacturing in the past decade, and great strides towards forming high quality aligned patterns have been made. But state of the art methods still yield defectivities orders of magnitude higher than is necessary in semi-conductor fabrication even though free energy calculations suggest that equilibrium defectivities are much lower than is necessary for economic semi-conductor fabrication. This disparity suggests that the main problem may lie in the kinetics of defect removal. This work uses a coarse-grained model to study the rates, pathways, and dependencies of healing a common defect to give insight into the fundamental processes that control defect healing and give guidance on optimal process conditions for BCP-DSA. It is found that infinitely thick films yield an exponential drop in defect heal rate above χN ~ 30. Below χN ~ 30, the rate of transport was similar to the rate at which the transition state was reached so that the overall rate changed only slightly. The energy barrier in periodic simulations increased with 0.31 χN on average. Thin film simulations show no change in rate associated with the energy barrier below χN ~ 50, and then show an increase in energy barrier scaling with 0.16χN. Thin film simulations always begin to heal at either the free interface or the BCP-underlayer interface where the increased A-B contact area associated with the transition state will be minimized, while the infinitely thick films must start healing in the bulk where the A-B contact area is increased. It is also found that cooperative chain movement is required for the defect to start healing.

Interplay of dopants and defects in making Cu doped TiO{sub 2} nanoparticle a ferromagnetic semiconductor

Energy Technology Data Exchange (ETDEWEB)

Choudhury, Biswajit, E-mail: biswa.tezu@gmail.com [Department of Physics, Tezpur University, Napaam 784028, Assam (India); Choudhury, Amarjyoti [Department of Physics, Tezpur University, Napaam 784028, Assam (India); Borah, Debajit [Department of Chemical Engineering, Indian Institute of Technology Guwahati, Guwahati 781039, Assam (India)

2015-10-15

Here we have studied the role of oxygen defects and Cu dopants on ferromagnetism in Cu doped TiO{sub 2} nanoparticles with nominal Cu concentration of 2%, 4% and 6 mol%. Electron paramagnetic resonance (EPR) spectra analysis reveals the presence of Cu{sup 2+} in the distorted octahedral coordination of TiO{sub 2}. Cu d-states undergo strong p-d coupling with the valence band O 2p state of TiO{sub 2} resulting the extended absorption hump in the visible region. Photoluminescence results reveal the presence of oxygen defect related emission peaks in Cu doped TiO{sub 2}. Room temperature ferromagnetism is observed in all the Cu doped TiO{sub 2} nanoparticles. Saturation magnetization is the highest at 4 mol% and then there is a decrease in magnetization at 6 mol%. Ferromagnetism completely disappears on calcinations of 4% Cu doped TiO{sub 2} in air at 450 °C for 8 h. It is speculated that both oxygen vacancies and Cu d-states are involved in the room temperature ferromagnetism. Spin polarization occurs by the formation of bound magnetic polaron between electrons in Cu{sup 2+}d-states and the unpaired spins in oxygen vacancies. Presence of Cu{sup 2+}-Cu{sup 2+}d-d exchange interaction and Cu{sup 2+}-O{sup 2−}-Cu{sup 2+} antiferromagnetic superexchange interactions might have resulted in the reduction in magnetization at 6 mol% Cu. - Graphical abstract: Ferromagnetism in Cu doped TiO{sub 2} requires presence of both Cu dopant and oxygen vacancies. - Highlights: • Cu doped TiO{sub 2} nanoparticle displays room temperature ferromagnetism. • Ferromagnetism requires presence of both Cu and oxygen vacancies. • Antiferromagnetic interaction persists at high Cu dopant concentration. • Paramagnetism appears on air annealing of the doped system for longer period.

Globally symmetric topological phase: from anyonic symmetry to twist defect

International Nuclear Information System (INIS)

Teo, Jeffrey C Y

2016-01-01

Topological phases in two dimensions support anyonic quasiparticle excitations that obey neither bosonic nor fermionic statistics. These anyon structures often carry global symmetries that relate distinct anyons with similar fusion and statistical properties. Anyonic symmetries associate topological defects or fluxes in topological phases. As the symmetries are global and static, these extrinsic defects are semiclassical objects that behave disparately from conventional quantum anyons. Remarkably, even when the topological states supporting them are Abelian, they are generically non-Abelian and powerful enough for topological quantum computation. In this article, I review the most recent theoretical developments on symmetries and defects in topological phases. (topical review)

A first principles study of native defects in alpha-quartz

CERN Document Server

Roma, G

2003-01-01

We present a study of several neutral and charged oxygen and silicon defects in alpha-quartz. We performed plane waves pseudopotential calculations in the framework of density functional theory in the local density approximation. We will show the structures that we obtained for vacancies and interstitials in several charge states and the corresponding formation energies. We discuss the reciprocal dependence of formation energies of charged defects (and thus concentrations) and the electron chemical potential on each other and we determine the latter by iterative self-consistent solution of the equation imposing charge neutrality. Results on defect concentrations, their dependence on oxygen partial pressure, and self-doping effects are presented.

Computed tomography on a defective CANDU fuel pencil end cap

International Nuclear Information System (INIS)

Lupton, L.R.

1985-09-01

Five tomographic slices through a defective end cap from a CANDU fuel pencil have been generated using a Co-60 source and a first generation translate-rotate tomography scanner. An anomaly in the density distribution that is believed to have resulted from the defect has been observed. However, with the 0.30 mm spatial resolution used, it has not been possible to state unequivocally whether the change in density is caused by a defect in the weld or a statistical anomaly in the data. It is concluded that a microtomography system, with a spatial resolution in the range of 0.1 mm, could detect the flaw

Radiographic assessment of welding connections defectiveness, state of art in Poland

International Nuclear Information System (INIS)

Swiatkowski, R.

1995-01-01

The assessment of welding connections defectiveness according to Polish regulations has been performed. The European regulations in interested matter and their relationships to Polish ones have been shown. The differences have been pointed out and discussed from the view point of law adaptation process preceding joining of Poland with the European Community. 12 refs, 7 figs, 2 tabs

Topological Defects in a Living Nematic Ensnare Swimming Bacteria

Science.gov (United States)

Genkin, Mikhail M.; Sokolov, Andrey; Lavrentovich, Oleg D.; Aranson, Igor S.

2017-01-01

Active matter exemplified by suspensions of motile bacteria or synthetic self-propelled particles exhibits a remarkable propensity to self-organization and collective motion. The local input of energy and simple particle interactions often lead to complex emergent behavior manifested by the formation of macroscopic vortices and coherent structures with long-range order. A realization of an active system has been conceived by combining swimming bacteria and a lyotropic liquid crystal. Here, by coupling the well-established and validated model of nematic liquid crystals with the bacterial dynamics, we develop a computational model describing intricate properties of such a living nematic. In faithful agreement with the experiment, the model reproduces the onset of periodic undulation of the director and consequent proliferation of topological defects with the increase in bacterial concentration. It yields a testable prediction on the accumulation of bacteria in the cores of +1 /2 topological defects and depletion of bacteria in the cores of -1 /2 defects. Our dedicated experiment on motile bacteria suspended in a freestanding liquid crystalline film fully confirms this prediction. Our findings suggest novel approaches for trapping and transport of bacteria and synthetic swimmers in anisotropic liquids and extend a scope of tools to control and manipulate microscopic objects in active matter.

Defect-tuning exchange bias of ferromagnet/antiferromagnet core/shell nanoparticles by numerical study

International Nuclear Information System (INIS)

Mao Zhongquan; Chen Xi; Zhan Xiaozhi

2012-01-01

The influence of non-magnetic defects on the exchange bias (EB) of ferromagnet (FM)/antiferromagnet (AFM) core/shell nanoparticles is studied by Monte Carlo simulations. It is found that the EB can be tuned by defects in different positions. Defects at both the AFM and FM interfaces reduce the EB field while they enhance the coercive field by decreasing the effective interface coupling. However, the EB field and the coercive field show respectively a non-monotonic and a monotonic dependence on the defect concentration when the defects are located inside the AFM shell, indicating a similar microscopic mechanism to that proposed in the domain state model. These results suggest a way to optimize the EB effect for applications. (paper)

Electron scattering in graphene by defects in underlying h-BN layer: First-principles transport calculations

Science.gov (United States)

Kaneko, Tomoaki; Ohno, Takahisa

2018-03-01

We investigate the electronic structure and the transport properties of graphene adsorbed onto h-BN with carbon impurities or atomic vacancies using density functional theory and the non-equilibrium Green's function method. We find that the transport properties are degraded due to carrier doping and scattering off of localized defect states in h-BN. When graphene is doped by introducing defects in h-BN, the transmission spectra become asymmetric owing to the reduction of the electronic density of states, which contributes significantly to the degradation of graphene transport properties as compared with the effect of defect levels.

Hopping magnetotransport via nonzero orbital momentum states and organic magnetoresistance.

Science.gov (United States)

Alexandrov, Alexandre S; Dediu, Valentin A; Kabanov, Victor V

2012-05-04

In hopping magnetoresistance of doped insulators, an applied magnetic field shrinks the electron (hole) s-wave function of a donor or an acceptor and this reduces the overlap between hopping sites resulting in the positive magnetoresistance quadratic in a weak magnetic field, B. We extend the theory of hopping magnetoresistance to states with nonzero orbital momenta. Different from s states, a weak magnetic field expands the electron (hole) wave functions with positive magnetic quantum numbers, m>0, and shrinks the states with negative m in a wide region outside the point defect. This together with a magnetic-field dependence of injection/ionization rates results in a negative weak-field magnetoresistance, which is linear in B when the orbital degeneracy is lifted. The theory provides a possible explanation of a large low-field magnetoresistance in disordered π-conjugated organic materials.

MRI of optic tract lesions: Review and correlation with visual field defects

International Nuclear Information System (INIS)

Fadzli, F.; Ramli, N.; Ramli, N.M.

2013-01-01

Visual field defects are a conglomerate of patterns of visual impairment derived from diseases affecting the optic nerve as it extends from the globe to the visual cortex. They are complex signs requiring perimetry or visual confrontation for delineation and are associated with diverse aetiologies. This review considers the chiasmatic and post-chiasmatic causes of visual disturbances, with an emphasis on magnetic resonance imaging (MRI) techniques. Newer MRI sequences are considered, such as diffusion-tensor imaging. MRI images are correlated with perimetric findings in order to demonstrate localization of lesions in the visual pathway. This may serve as a valuable reference tool to clinicians and radiologists in the early diagnostic process of differentiating causes of various visual field defects in daily practice

Interpretation and Regulation of Electronic Defects in IGZO TFTs Through Materials & Processes

Science.gov (United States)

Mudgal, Tarun

concentration. • Transport behavior at cryogenic temperatures identified variable range hopping as the electron transport mechanism at temperature below 130 K, whereas at temperature greater than 130 K, the current vs temperature response followed an Arrhenius relationship consistent with extended state transport. • Refinement of an IGZO material model for TCAD simulation, which consists of oxygen vacancy donors providing an integrated space charge concentration NVO = +5e15 cm-3, and acceptor-like band-tail states with a total integrated ionized concentration of NTA = -2e18 cm-3. An intrinsic electron mobility was established to be micron = 12.7 cm2/V·s. • A SPICE-compatible 2D on-state operation model for IGZO TFTs has been developed which includes the integration of drain-impressed deionization of band-tail states and results in a 2D modification of free channel charge. The model provides an exceptional match to measured data and TCAD simulation, with model parameters for channel mobility (microch = 12 cm2/V·s) and threshold voltage (V T = 0.14 V) having a close match to TCAD analogs. • TCAD material and device models for bottom-gate and double-gate TFT configurations have been developed which depict the role of defect states on device operation, as well as provide insight and support of a presented hypothesis on DIBL like device behavior associated with back-channel interface trap inhomogeneity. This phenomenon has been named Trap Associated Barrier Lowering (TABL). • A process integration scheme has been developed that includes IGZO back-channel passivation with PECVD SiO2, furnace annealing in O2 at 400 °C, and a thin capping layer of alumina deposited via atomic layer deposition. This process supports device stability when subjected to negative and positive bias stress conditions, and thermal stability up to 140 °C. It also enables TFT operation at short channel lengths (Leff 3 microm) with steep subthreshold characteristics (SS 120 mV/dec). The details of

Synthesis, structuring and characterization of rare earth oxide thin films: Modeling of the effects of stress and defects on the phase stability

International Nuclear Information System (INIS)

Gaboriaud, R.J.; Paumier, F.; Lacroix, B.

2014-01-01

This work studies the effects of the deposition parameters on the microstructure and the related residual stress in a rare earth oxide thin film. This study is focused on the yttrium sesquioxide (Y 2 O 3 ) thin films deposited on Si (100) substrates using the ion beam sputtering technique. This technique allows the control of the microstructure and the related residual stress in the thin films by monitoring the energy of the argon beam used in the deposition process. Measurements of the stresses within the oxide layer were performed by the X-ray diffraction-sin 2 Ψ method. The results show that the classic model of a pure biaxial in-plane model of stress, generally proposed in thin films, is not satisfying. A model that includes a hydrostatic stress due to the crystalline defects generated during the deposition process and a biaxial stress called a fixation stress, gives a good agreement with the experimental results. This modeling of the residual stress, based on nanometer-scale inclusions (point, extended defects) inducing a hydrostatic stress field, leads to a quantitative analysis of the nature and the concentration of the defects. This work shows results that establish a relationship between residual stress, defects and non-equilibrium phase stabilization during growth. - Highlights: • Microstructure of Y 2 O 3 thin films • Measurements of residual stresses in the thin films • Modeling of a triaxial residual stress state • Stress-induced stabilization of non-equilibrium phase

Muon spin rotation studies of defect states in solids: the story of anomalous muonium

International Nuclear Information System (INIS)

Estle, T.L.

1983-01-01

Muon spin rotation (μSR) is a powerful technique to study magnetic phenomena, light interstitial diffusion, and hydrogenic chemistry. However it has been applied in several other areas of science where its applicability was not immediately apparent. One of these is the study of an unusual muonic defect, anomalous muonium, produced when μ + stops in semiconducting crystals. The study of anomalous muonium and the process of inferring its structure are described. For this defect, μSR has learned far more than have efforts to study the analogous hydrogenic center

Importance of packing in spiral defect chaos

Indian Academy of Sciences (India)

We develop two measures to characterize the geometry of patterns exhibited by the state of spiral defect chaos, a weakly turbulent regime of Rayleigh-Bénard convection. These describe the packing of contiguous stripes within the pattern by quantifying their length and nearest-neighbor distributions. The distributions ...

Defect Characterization, Imaging, and Control in Wide-Bandgap Semiconductors and Devices

Science.gov (United States)

Brillson, L. J.; Foster, G. M.; Cox, J.; Ruane, W. T.; Jarjour, A. B.; Gao, H.; von Wenckstern, H.; Grundmann, M.; Wang, B.; Look, D. C.; Hyland, A.; Allen, M. W.

2018-03-01

Wide-bandgap semiconductors are now leading the way to new physical phenomena and device applications at nanoscale dimensions. The impact of defects on the electronic properties of these materials increases as their size decreases, motivating new techniques to characterize and begin to control these electronic states. Leading these advances have been the semiconductors ZnO, GaN, and related materials. This paper highlights the importance of native point defects in these semiconductors and describes how a complement of spatially localized surface science and spectroscopy techniques in three dimensions can characterize, image, and begin to control these electronic states at the nanoscale. A combination of characterization techniques including depth-resolved cathodoluminescence spectroscopy, surface photovoltage spectroscopy, and hyperspectral imaging can describe the nature and distribution of defects at interfaces at both bulk and nanoscale surfaces, their metal interfaces, and inside nanostructures themselves. These features as well as temperature and mechanical strain inside wide-bandgap device structures at the nanoscale can be measured even while these devices are operating. These advanced capabilities enable several new directions for describing defects at the nanoscale, showing how they contribute to device degradation, and guiding growth processes to control them.

Unbalanced atrioventricular septal defect: definition and decision making.

Science.gov (United States)

Overman, David M; Baffa, Jeanne M; Cohen, Meryl S; Mertens, Luc; Gremmels, David B; Jegatheeswaram, Anusha; McCrindle, Brian W; Blackstone, Eugene H; Morell, Victor O; Caldarone, Christopher; Williams, William G; Pizarro, Christian

2010-04-01

Unbalanced atrioventricular septal defect is an uncommon lesion with widely varying anatomic manifestations. When unbalance is severe, diagnosis and treatment is straightforward, directed toward single-ventricle palliation. Milder forms, however, pose a challenge to current diagnostic and therapeutic approaches. The transition from anatomies that are capable of sustaining biventricular physiology to those that cannot is obscure, resulting in uneven application of surgical strategy and excess mortality. Imprecise assessments of ventricular competence have dominated clinical decision making in this regard. Malalignment of the atrioventricular junction and its attendant derangement of inflow physiology is a critical factor in determining the feasibility of biventricular repair in the setting of unbalanced atrioventricular septal defect. The atrioventricular valve index accurately identifies unbalanced atrioventricular septal defect and also brings into focus a zone of transition from anatomies that can support a biventricular end state and those that cannot.

Rigorous treatment of the non-ohmic d.c. conductivity due to phonon-assisted tunneling from localized to extended states

International Nuclear Information System (INIS)

Majernikova, E.

1984-03-01

A quantitative treatment of the non-ohmic current response due to delocalization of shallow localized electrons in a model of a disordered solid is given. A phonon-assisted tunneling in electric field from shallow localized to extended states is confirmed as a mechanism leading to the dependence which was experimentally found for chalcogenide glasses. (author)

Investigation of the growth defects in strontium titanate single crystals

Energy Technology Data Exchange (ETDEWEB)

Kulagin, N A; Landar, S V; Podus, L P [Khar' kovskij Gosudarstvennyj Univ. (Ukrainian SSR)

1981-02-01

Investigation results of characteristics and reasons for formation of macroscopic growth defects in SrTiO/sub 3/ monocrystals grown up by Wernail method are presented. It is shown that blue colour occurring in the specimen volume is caused by shortage of oxygen during growing which results in transition of some ions from tetravalent to trivalent state. The defect of another type is characterized by increased content of Fe and Ni oxides.

Modification of electronic structure, magnetic structure, and topological phase of bismuthene by point defects

Science.gov (United States)

Kadioglu, Yelda; Kilic, Sevket Berkay; Demirci, Salih; Aktürk, O. Üzengi; Aktürk, Ethem; Ciraci, Salim

2017-12-01

This paper reveals how the electronic structure, magnetic structure, and topological phase of two-dimensional (2D), single-layer structures of bismuth are modified by point defects. We first showed that a free-standing, single-layer, hexagonal structure of bismuth, named h-bismuthene, exhibits nontrivial band topology. We then investigated interactions between single foreign adatoms and bismuthene structures, which comprise stability, bonding, electronic structure, and magnetic structures. Localized states in diverse locations of the band gap and resonant states in band continua of bismuthene are induced upon the adsorption of different adatoms, which modify electronic and magnetic properties. Specific adatoms result in reconstruction around the adsorption site. Single vacancies and divacancies can form readily in bismuthene structures and remain stable at high temperatures. Through rebondings, Stone-Whales-type defects are constructed by divacancies, which transform into a large hole at high temperature. Like adsorbed adatoms, vacancies induce also localized gap states, which can be eliminated through rebondings in divacancies. We also showed that not only the optical and magnetic properties, but also the topological features of pristine h-bismuthene can be modified by point defects. The modification of the topological features depends on the energies of localized states and also on the strength of coupling between point defects.

Birth defects and genetic disorders among Arab Americans--Michigan, 1992-2003.

Science.gov (United States)

Yanni, Emad A; Copeland, Glenn; Olney, Richard S

2010-06-01

Birth defects and genetic disorders are leading causes of infant morbidity and mortality in many countries. Population-based data on birth defects among Arab-American children have not been documented previously. Michigan has the second largest Arab-American community in the United States after California. Using data from the Michigan Birth Defects Registry (MBDR), which includes information on parents' country of birth and ancestry, birth prevalences were estimated in offspring of Michigan women of Arab ancestry for 21 major categories of birth defects and 12 congenital endocrine, metabolic, and hereditary disorders. Compared with other non-Hispanic white children in Michigan, Arab-American children had similar or lower birth prevalences of the selected types of structural birth defects, with higher rates of certain hereditary blood disorders and three categories of metabolic disorders. These estimates are important for planning preconception and antenatal health care, genetic counseling, and clinical care for Arab Americans.

CD and defect improvement challenges for immersion processes

Science.gov (United States)

Ehara, Keisuke; Ema, Tatsuhiko; Yamasaki, Toshinari; Nakagawa, Seiji; Ishitani, Seiji; Morita, Akihiko; Kim, Jeonghun; Kanaoka, Masashi; Yasuda, Shuichi; Asai, Masaya

2009-03-01

The intention of this study is to develop an immersion lithography process using advanced track solutions to achieve world class critical dimension (CD) and defectivity performance in a state of the art manufacturing facility. This study looks at three important topics for immersion lithography: defectivity, CD control, and wafer backside contamination. The topic of defectivity is addressed through optimization of coat, develop, and rinse processes as well as implementation of soak steps and bevel cleaning as part of a comprehensive defect solution. Develop and rinse processing techniques are especially important in the effort to achieve a zero defect solution. Improved CD control is achieved using a biased hot plate (BHP) equipped with an electrostatic chuck. This electrostatic chuck BHP (eBHP) is not only able to operate at a very uniform temperature, but it also allows the user to bias the post exposure bake (PEB) temperature profile to compensate for systematic within-wafer (WiW) CD non-uniformities. Optimized CD results, pre and post etch, are presented for production wafers. Wafer backside particles can cause focus spots on an individual wafer or migrate to the exposure tool's wafer stage and cause problems for a multitude of wafers. A basic evaluation of the cleaning efficiency of a backside scrubber unit located on the track was performed as a precursor to a future study examining the impact of wafer backside condition on scanner focus errors as well as defectivity in an immersion scanner.

On holographic defect entropy

International Nuclear Information System (INIS)

Estes, John; Jensen, Kristan; O’Bannon, Andy; Tsatis, Efstratios; Wrase, Timm

2014-01-01

We study a number of (3+1)- and (2+1)-dimensional defect and boundary conformal field theories holographically dual to supergravity theories. In all cases the defects or boundaries are planar, and the defects are codimension-one. Using holography, we compute the entanglement entropy of a (hemi-)spherical region centered on the defect (boundary). We define defect and boundary entropies from the entanglement entropy by an appropriate background subtraction. For some (3+1)-dimensional theories we find evidence that the defect/boundary entropy changes monotonically under certain renormalization group flows triggered by operators localized at the defect or boundary. This provides evidence that the g-theorem of (1+1)-dimensional field theories generalizes to higher dimensions

Transcriptomic analysis of swarm motility phenotype of Salmonella enterica serovar Typhimurium mutant defective in periplasmic glucan synthesis

Science.gov (United States)

Movement of food-borne pathogens on moist surfaces enables them to migrate towards more favorable niches and facilitate their survival for extended periods of time. Salmonella enterica serovar Typhimurium mutants defective in OPG synthesis are unable to exhibit motility on moist surfaces (swarming) ...

The Observation Of Defects Of School Buildings Over 100 Years Old In Perak

Directory of Open Access Journals (Sweden)

Alauddin Kartina

2016-01-01

Full Text Available Malaysia is blessed with a rich legacy of heritage buildings with unique architectural and historical values. The heritage buildings become a symbol of the national identity of our country. Therefore, heritage buildings, as important monuments should be conserved well to ensure the extension of the building’s life span and to make sure continuity functions of the building for future generations. The aim of this study is to analyze the types of defects attached in school buildings over 100 years located in Perak. The data were collected in four different schools aged over 100 years in Perak. The finding of the study highlighted the types of defects which were categorized based on building elements, including external wall, roof, door, ceiling, staircase, column, internal wall, floor and windows. Finding showed that the type of defects occurred in school buildings over 100 years in Perak is the same as the other heritage buildings. This finding can be used by all parties to take serious actions in preventing defects from occurring in buildings over 100 years. This would ensure that buildings’ functional life span can be extended for future use.

2D ultrathin core-shell Pd@Ptmonolayer nanosheets: defect-mediated thin film growth and enhanced oxygen reduction performance

Science.gov (United States)

Wang, Wenxin; Zhao, Yunfeng; Ding, Yi

2015-07-01

An operational strategy for the synthesis of atomically smooth Pt skin by a defect-mediated thin film growth method is reported. Extended ultrathin core-shell structured d@Ptmonolayer nanosheets (thickness below 5 nm) exhibit nearly seven-fold enhancement in mass-activity and surprisingly good durability toward oxygen reduction reaction as compared with the commercial Pt/C catalyst.An operational strategy for the synthesis of atomically smooth Pt skin by a defect-mediated thin film growth method is reported. Extended ultrathin core-shell structured d@Ptmonolayer nanosheets (thickness below 5 nm) exhibit nearly seven-fold enhancement in mass-activity and surprisingly good durability toward oxygen reduction reaction as compared with the commercial Pt/C catalyst. Electronic supplementary information (ESI) available: Sample preparation, physical and electrochemical characterization, Fig. S1 to S11. See DOI: 10.1039/c5nr02748a

Matrix-product-state simulation of an extended Brueschweiler bulk-ensemble database search

International Nuclear Information System (INIS)

SaiToh, Akira; Kitagawa, Masahiro

2006-01-01

Brueschweiler's database search in a spin Liouville space can be efficiently simulated on a conventional computer without error as long as the simulation cost of the internal circuit of an oracle function is polynomial, unlike the fact that in true NMR experiments, it suffers from an exponential decrease in the variation of a signal intensity. With the simulation method using the matrix-product-state proposed by Vidal [G. Vidal, Phys. Rev. Lett. 91, 147902 (2003)], we perform such a simulation. We also show the extensions of the algorithm without utilizing the J-coupling or DD-coupling splitting of frequency peaks in observation: searching can be completed with a single query in polynomial postoracle circuit complexities in an extension; multiple solutions of an oracle can be found in another extension whose query complexity is linear in the key length and in the number of solutions (this extension is to find all of marked keys). These extended algorithms are also simulated with the same simulation method

Energy gap of extended states in SiC-doped graphene nanoribbon: Ab initio calculations

Energy Technology Data Exchange (ETDEWEB)

Liu, Xiaoshi; Wu, Yong [College of Science, University of Shanghai for Science and Technology, Shanghai 200093 (China); Shanghai Key Lab of Modern Optical System, Shanghai 200093 (China); Li, Zhongyao, E-mail: lizyusst@gmail.com [College of Science, University of Shanghai for Science and Technology, Shanghai 200093 (China); Shanghai Key Lab of Modern Optical System, Shanghai 200093 (China); Gao, Yong [School of Science, Shanghai Second Polytechnic University, Shanghai 201209 (China)

2017-04-01

Highlights: • The gap of isolated ribbon is inversely proportional to the width of ribbon. • The gap of doped ribbon cannot be modeled by effective width approximation. • The fitted energy gap can match the experimental observations. • The doping results in a spin-polarized metallic-like band structure. - Abstract: The energy gap of extended states in zigzag graphene nanoribbons (ZGNRs) was examined on the basis of density-functional theory. In isolated ZGNRs, the energy gap is inversely proportional to the width of ribbon. It agrees well with the results from the Dirac equation in spin-unpolarized ZGNRs, although the considered ZGNRs have spin-polarized edges. However, the energy gap in SiC-doped ZGNRs cannot be modeled by effective width approximation. The doping also lifts the spin-degenerate of edge states and results in a metallic-like band structure near the Fermi level in SiC-doped ZGNRs. Our calculations may be helpful for understanding the origin of the reported single-channel ballistic transport in epitaxial graphene nanoribbons.

Point-Defect Nature of the Ultraviolet Absorption Band in AlN

Science.gov (United States)

Alden, D.; Harris, J. S.; Bryan, Z.; Baker, J. N.; Reddy, P.; Mita, S.; Callsen, G.; Hoffmann, A.; Irving, D. L.; Collazo, R.; Sitar, Z.

2018-05-01

We present an approach where point defects and defect complexes are identified using power-dependent photoluminescence excitation spectroscopy, impurity data from SIMS, and density-functional-theory (DFT)-based calculations accounting for the total charge balance in the crystal. Employing the capabilities of such an experimental computational approach, in this work, the ultraviolet-C absorption band at 4.7 eV, as well as the 2.7- and 3.9-eV luminescence bands in AlN single crystals grown via physical vapor transport (PVT) are studied in detail. Photoluminescence excitation spectroscopy measurements demonstrate the relationship between the defect luminescent bands centered at 3.9 and 2.7 eV to the commonly observed absorption band centered at 4.7 eV. Accordingly, the thermodynamic transition energy for the absorption band at 4.7 eV and the luminescence band at 3.9 eV is estimated at 4.2 eV, in agreement with the thermodynamic transition energy for the CN- point defect. Finally, the 2.7-eV PL band is the result of a donor-acceptor pair transition between the VN and CN point defects since nitrogen vacancies are predicted to be present in the crystal in concentrations similar to carbon-employing charge-balance-constrained DFT calculations. Power-dependent photoluminescence measurements reveal the presence of the deep donor state with a thermodynamic transition energy of 5.0 eV, which we hypothesize to be nitrogen vacancies in agreement with predictions based on theory. The charge state, concentration, and type of impurities in the crystal are calculated considering a fixed amount of impurities and using a DFT-based defect solver, which considers their respective formation energies and the total charge balance in the crystal. The presented results show that nitrogen vacancies are the most likely candidate for the deep donor state involved in the donor-acceptor pair transition with peak emission at 2.7 eV for the conditions relevant to PVT growth.

Electronic transport of bilayer graphene with asymmetry line defects

Science.gov (United States)

Zhao, Xiao-Ming; Wu, Ya-Jie; Chen, Chan; Liang, Ying; Kou, Su-Peng

2016-11-01

In this paper, we study the quantum properties of a bilayer graphene with (asymmetry) line defects. The localized states are found around the line defects. Thus, the line defects on one certain layer of the bilayer graphene can lead to an electric transport channel. By adding a bias potential along the direction of the line defects, we calculate the electric conductivity of bilayer graphene with line defects using the Landauer-Büttiker theory, and show that the channel affects the electric conductivity remarkably by comparing the results with those in a perfect bilayer graphene. This one-dimensional line electric channel has the potential to be applied in nanotechnology engineering. Project supported by the National Basic Research Program of China (Grant Nos. 2011CB921803 and 2012CB921704), the National Natural Science Foundation of China (Grant Nos. 11174035, 11474025, 11504285, and 11404090), the Specialized Research Fund for the Doctoral Program of Higher Education, China, the Fundamental Research Funds for the Central Universities, China, the Scientific Research Program Fund of the Shaanxi Provincial Education Department, China (Grant No. 15JK1363), and the Young Talent Fund of University Association for Science and Technology in Shaanxi Province, China.

Defects in silicon effect on device performance and relationship to crystal growth conditions

Science.gov (United States)

Jastrzebski, L.

1985-01-01

A relationship between material defects in silicon and the performance of electronic devices will be described. A role which oxygen and carbon in silicon play during the defects generation process will be discussed. The electronic properties of silicon are a strong function of the oxygen state in the silicon. This state controls mechanical properties of silicon efficiency for internal gettering and formation of defects in the device's active area. In addition, to temperature, time, ambience, and the cooling/heating rates of high temperature treatments, the oxygen state is a function of the crystal growth process. The incorporation of carbon and oxygen into silicon crystal is controlled by geometry and rotation rates applied to crystal and crucible during crystal growths. Also, formation of nucleation centers for oxygen precipitation is influenced by the growth process, although there is still a controversy which parameters play a major role. All these factors will be reviewed with special emphasis on areas which are still ambiguous and controversial.

Ultrafast carrier dynamics in band edge and broad deep defect emission ZnSe nanowires

Science.gov (United States)

Othonos, Andreas; Lioudakis, Emmanouil; Philipose, U.; Ruda, Harry E.

2007-12-01

Ultrafast carrier dynamics of ZnSe nanowires grown under different growth conditions have been studied. Transient absorption measurements reveal the dependence of the competing effects of state filling and photoinduced absorption on the probed energy states. The relaxation of the photogenerated carriers occupying defect states in the stoichiometric and Se-rich samples are single exponentials with time constants of 3-4ps. State filling is the main contribution for probe energies below 1.85eV in the Zn-rich grown sample. This ultrafast carrier dynamics study provides an important insight into the role that intrinsic point defects play in the observed photoluminescence from ZnSe nanowires.

MATERIAL ELEMENT MODEL FOR EXTRINSIC SEMICONDUCTORS WITH DEFECTS OF DISLOCATION

Directory of Open Access Journals (Sweden)

Maria Paola Mazzeo

2011-07-01

Full Text Available In a previous paper we outlined a geometric model for the thermodynamic description of extrinsic semiconductors with defects of dislocation.Applying a geometrization technique, within the rationalextended irreversible thermodynamics with internal variables, the dynamical system for simple material elements of these media, the expressions of the entropy function and the entropy 1-form were obtained. In this contribution we deepen the study of this geometric model. We give a detailed description of the defective media under consideration and of the dislocation core tensor, we introduce the transformation induced by the process and, applying the closure conditions for the entropy 1-form, we derive the necessary conditions for the existence of the entropy function. These and other results are new in the paper.The derivation of the relevant entropy 1-form is the starting point to introduce an extended thermodynamical phase space.

Defect-Induced Luminescence of a Self-Activated Borophosphate Phosphor

Science.gov (United States)

Han, Bing; Liu, Beibei; Dai, Yazhou; Zhang, Jie

2018-05-01

A self-activated borophosphate phosphor Ba3BPO7 was prepared via typical solid-state reaction in thermal-carbon reduction atmosphere. The structural and luminescence properties were investigated using x-ray powder diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy, and photoluminescence spectroscopy. Upon excitation with ultraviolet (UV) light, the as-prepared phosphor shows bright greenish-yellow emission with a microsecond-level fluorescence lifetime, which could result from the oxygen vacancies produced in the process of solid-state synthesis. The possible luminescence mechanism is proposed. Through the introduction of defects in the host, this work realizes visible luminescence in a pure borophosphate compound that does not contain any rare earth or transition metal activators, so it is helpful to develop defect-related luminescent materials in view of energy conservation and environmental protection for sustainable development.

Improving Defect-Based Quantum Emitters in Silicon Carbide via Inorganic Passivation.

Science.gov (United States)

Polking, Mark J; Dibos, Alan M; de Leon, Nathalie P; Park, Hongkun

2018-01-01

Defect-based color centers in wide-bandgap crystalline solids are actively being explored for quantum information science, sensing, and imaging. Unfortunately, the luminescent properties of these emitters are frequently degraded by blinking and photobleaching that arise from poorly passivated host crystal surfaces. Here, a new method for stabilizing the photoluminescence and charge state of color centers based on epitaxial growth of an inorganic passivation layer is presented. Specifically, carbon antisite-vacancy pairs (CAV centers) in 4H-SiC, which serve as single-photon emitters at visible wavelengths, are used as a model system to demonstrate the power of this inorganic passivation scheme. Analysis of CAV centers with scanning confocal microscopy indicates a dramatic improvement in photostability and an enhancement in emission after growth of an epitaxial AlN passivation layer. Permanent, spatially selective control of the defect charge state can also be achieved by exploiting the mismatch in spontaneous polarization at the AlN/SiC interface. These results demonstrate that epitaxial inorganic passivation of defect-based quantum emitters provides a new method for enhancing photostability, emission, and charge state stability of these color centers. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Defects in semiconductors

CERN Document Server

Romano, Lucia; Jagadish, Chennupati

2015-01-01

This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

Experimental study of the strain state at the area of a surface defect in a steel cylindrical shell subjected to internal pressure

OpenAIRE

Бесчетников, Д. А.

2014-01-01

Experimental research of stress-strain state at the area of local volumetric surface defects of the pipeline systems is an important goal because results of the measurements are necessary for increasing of effectiveness of existing repair technologies using fiber reinforcement polymer composite materials. In this work the description of experiment carried out by the author is presented with statement of results. The experiment was devoted to strain gauging of a steel cylindrical shell with vo...

Defect-induced ferromagnetism in semiconductors: A controllable approach by particle irradiation

International Nuclear Information System (INIS)

Zhou, Shengqiang

2014-01-01

Making semiconductors ferromagnetic has been a long dream. One approach is to dope semiconductors with transition metals (TM). TM ions act as local moments and they couple with free carriers to develop collective magnetism. However, there are no fundamental reasons against the possibility of local moment formation from localized sp states. Recently, ferromagnetism was observed in nonmagnetically doped, but defective semiconductors or insulators including ZnO and TiO 2 . This kind of observation challenges the conventional understanding of ferromagnetism. Often the defect-induced ferromagnetism has been observed in samples prepared under non-optimized condition, i.e. by accident or by mistake. Therefore, in this field theory goes much ahead of experimental investigation. To understand the mechanism of the defect-induced ferromagnetism, one needs a better controlled method to create defects in the crystalline materials. As a nonequilibrium and reproducible approach of inducing defects, ion irradiation provides such a possibility. Energetic ions displace atoms from their equilibrium lattice sites, thus creating mainly vacancies, interstitials or antisites. The amount and the distribution of defects can be controlled by the ion fluence and energy. By ion irradiation, we have generated defect-induced ferromagnetism in ZnO, TiO 2 and SiC. In this short review, we also summarize some results by other groups using energetic ions to introduce defects, and thereby magnetism in various materials. Ion irradiation combined with proper characterizations of defects could allow us to clarify the local magnetic moments and the coupling mechanism in defective semiconductors. Otherwise we may have to build a new paradigm to understand the defect-induced ferromagnetism

Utility of Capture-Recapture Methodology to Estimate Prevalence of Congenital Heart Defects Among Adolescents in 11 New York State Counties: 2008 to 2010.

Science.gov (United States)

Akkaya-Hocagil, Tugba; Hsu, Wan-Hsiang; Sommerhalter, Kristin; McGarry, Claire; Van Zutphen, Alissa

2017-11-01

Congenital heart defects (CHDs) are the most common birth defects in the United States, and the population of individuals living with CHDs is growing. Though CHD prevalence in infancy has been well characterized, better prevalence estimates among children and adolescents in the United States are still needed. We used capture-recapture methods to estimate CHD prevalence among adolescents residing in 11 New York counties. The three data sources used for analysis included Statewide Planning and Research Cooperative System (SPARCS) hospital inpatient records, SPARCS outpatient records, and medical records provided by seven pediatric congenital cardiac clinics from 2008 to 2010. Bayesian log-linear models were fit using the R package Conting to account for dataset dependencies and heterogeneous catchability. A total of 2537 adolescent CHD cases were captured in our three data sources. Forty-four cases were identified in all data sources, 283 cases were identified in two of three data sources, and 2210 cases were identified in a single data source. The final model yielded an estimated total adolescent CHD population of 3845, indicating that 66% of the cases in the catchment area were identified in the case-identifying data sources. Based on 2010 Census estimates, we estimated adolescent CHD prevalence as 6.4 CHD cases per 1000 adolescents (95% confidence interval: 6.2-6.6). We used capture-recapture methodology with a population-based surveillance system in New York to estimate CHD prevalence among adolescents. Future research incorporating additional data sources may improve prevalence estimates in this population. Birth Defects Research 109:1423-1429, 2017.© 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

Defect properties of CuCrO2: A density functional theory calculation

International Nuclear Information System (INIS)

Fang Zhi-Jie; Zhu Ji-Zhen; Zhou Jiang; Mo Man

2012-01-01

Using the first-principles methods, we study the formation energetics properties of intrinsic defects, and the charge doping properties of extrinsic defects in transparent conducting oxides CuCrO 2 . Intrinsic defects, some typical acceptor-type, and donor-type extrinsic defects in their relevant charge state are considered. By systematically calculating the formation energies and transition energy, the results of calculation show that, V Cu , O i , and O Cu are the relevant intrinsic defects in CuCrO 2 ; among these intrinsic defects, V Cu is the most efficient acceptor in CuCrO 2 . It is found that all the donor-type extrinsic defects have difficulty in inducing n-conductivity in CuCrO 2 because of their deep transition energy level. For all the acceptor-type extrinsic defects, substituting Mg for Cr is the most prominent doping acceptor with relative shallow transition energy levels in CuCrO 2 . Our calculation results are expected to be a guide for preparing promising n-type and p-type materials in CuCrO 2 . (condensed matter: electronic structure, electrical, magnetic, and optical properties)

The study of defects in metallic alloys by positron annihilation spectroscopy

International Nuclear Information System (INIS)

Romero, R.; Salgueiro, W.; Somoza, A.

1990-01-01

Positron annihilation spectroscopy (PAS) has become in a very useful non destructive testing to the study of condensed matter. Specially, in the last two decades, with the advent of solid state detectors and high-resolution time spectrometers. The basic information obtained with PAS in solid-state physics is on electronic structure in free defect materials. However, positron annihilation techniques (lifetime, angular correlation and Doppler broadening) have been succesfully applied to study crystal lattice defects with lower-than-average electron density, such as vacancies, small vacancy clusters, etc.. In this sense, information about: vacancy formation and migration energies, dislocations, grain boundaries, solid-solid phase transformation and radiation damage was obtained. In this work the application of the positron lifetime technique to study the thermal effects on a fine-grained superplastic Al-Ca-Zn alloy and the quenched-in defects in monocrystals of β Cu-Zn-Al alloy for several quenching temperatures is shown. (Author) [es

Functional and Aesthetic Outcome of Reconstruction of Large Oro-Facial Defects Involving the Lip after Tumor Resection

International Nuclear Information System (INIS)

Denewer, A.D.; Setie, A.E.; Hussein, O.A.; Aly, O.F.

2006-01-01

Background: Squamous cell carcinoma of the head and neck is a challenging disease to both surgeons and radiation oncologists due to proximity of many important anatomical structures. Surgery could be curative as these cancers usually metastasize very late by blood stream. Aim of the Work: This work addresses the oncologic, functional and aesthetic factors affecting reconstruction of large orofacial defects involving the lip following tumor resection. Patients and Methods: The study reviews the surgical outcome of one hundred and twelve patients with invasive tumors at. or extending to, the lip(s). treated at the Mansoura University - Surgical Oncology Department, from January 2000 to January 2005. Tumor stage were T 2 (43), T 3 (56) and T 4 (13). Nodal state was N 0 in 80, N 1 in 29 and N 2 in three cases. AJCC stage grouping was II (T 2 N 0 ) in 33 patients. stage III (T 3 N 0 orT 1-3 N 1 ) in 64 cases and stage IV (T 4 due to bone erosion or N 2 ) in 15 cases. The technique used for lip reconstruction was unilateral or bilateral myocutaneous depressor anguli oris flap (MCDAOF) for isolated lip defect (n=63). Bilateral myocutaneous depressor anguli oris (MCDAOF) plus local cervical rotational flap chin defects (n=3). pectorals major myocutaneous pedicled flap for cheek defects involving the lip together with a tongue flap for mucosal reconstruction (n=35). sternocleidomastoid clavicular myo-osseous flap for concomitant mandibular defects (n=] 2). Results: esthetic and functional results are evaluated regarding appearance, oral incompetence, disabling microstomia and eating difficulties. depressor anguli oris reconstruction allowed functioning static and dynamic oral function in all cases in contrast to the Pectorals major flap. there were 18 cases of oral incompetence (46.1%), nine cases of speech difficulty (23%) and five patients with poor cosmetic appearance within the second group total flap loss was not encountered, Partial nap loss affected thirteen

The fractal character of radiation defects aggregation in crystals

International Nuclear Information System (INIS)

Akylbekov, A.; Akimbekov, E.; Baktybekov, K.; Vasil'eva, I.

2002-01-01

In processes of self-organization, which characterize open systems, the source of ordering is a non-equilibrium. One of the samples of ordering system is radiation-stimulated aggregation of defects in solids. In real work the analysis of criterions of ordering defects structures in solid, which is continuously irradiate at low temperature is presented. The method of cellular automata used in simulation of irradiation. It allowed us to imitate processes of defects formation and recombination. The simulation realized on the surfaces up to 1000x1000 units with initial concentration of defects C n (the power of dose) 0.1-1 %. The number of iterations N (duration of irradiation) mounted to 10 6 cycles. The single centers, which are the sources of formation aggregates, survive in the result of probabilistic nature of formation and recombination genetic pairs of defects and with strictly fixed radius of recombination (the minimum inter anionic distance). For determination the character of same type defects distribution the potential of their interaction depending of defects type and reciprocal distance is calculated. For more detailed study of processes, proceeding in cells with certain sizes of aggregates, the time dependence of potential interaction is constructed. It is shown, that on primary stage the potential is negative, then it increase and approach the saturation in positive area. The minimum of interaction potential corresponds to state of physical chaos in system. Its increasing occurs with formation of same type defects aggregates. Further transition to saturation and 'undulating' character of curves explains by formation and destruction aggregates. The data indicated that - these processes occur simultaneously in cells with different sizes. It allows us to assume that the radiation defects aggregation have a fractal nature

Quantum transport in defective phosphorene nanoribbons: Effects of atomic vacancies

Science.gov (United States)

Li, L. L.; Peeters, F. M.

2018-02-01

Defects are almost inevitably present in realistic materials and defective materials are expected to exhibit very different properties than their nondefective (perfect) counterparts. Here, using a combination of the tight-binding approach and the scattering matrix formalism, we investigate the electronic transport properties of defective phosphorene nanoribbons (PNRs) containing atomic vacancies. We find that for both armchair PNRs (APNRs) and zigzag PNRs (ZPNRs), single vacancies can create quasilocalized states, which can affect their conductance. With increasing vacancy concentration, three different transport regimes are identified: ballistic, diffusive, and Anderson localized ones. In particular, ZPNRs that are known to be metallic due to the presence of edge states become semiconducting: edge conductance vanishes and transport gap appears due to Anderson localization. Moreover, we find that for a fixed vacancy concentration, both APNRs and ZPNRs of narrower width and/or longer length are more sensitive to vacancy disorder than their wider and/or shorter counterparts, and that for the same ribbon length and width, ZPNRs are more sensitive to vacancy disorder than APNRs.

P-N defect in GaNP studied by optically detected magnetic resonance

International Nuclear Information System (INIS)

Chen, W.M.; Thinh, N.Q.; Vorona, I.P.; Buyanova, I.A.; Xin, H.P.; Tu, C.W.

2003-01-01

We provide experimental evidence for an intrinsic defect in GaNP from optically detected magnetic resonance (ODMR). This defect is identified as a P-N complex, exhibiting hyperfine structure due to interactions with a nuclear spin I=((1)/(2)) of one P atom and also a nuclear spin I=1 due to one N atom. The introduction of the defect is assisted by the incorporation of N within the studied N composition range of up to 3.1%, under non-equilibrium growth conditions during gas-source molecular beam epitaxy. The corresponding ODMR spectrum was found to be isotropic, suggesting an A 1 symmetry of the defect state. The localization of the electron wave function at the P-N defect in GaNP is found to be even stronger than that for the isolated P Ga antisite in its parent binary compound GaP

Dual passivation of intrinsic defects at the compound semiconductor/oxide interface using an oxidant and a reductant.

Science.gov (United States)

Kent, Tyler; Chagarov, Evgeniy; Edmonds, Mary; Droopad, Ravi; Kummel, Andrew C

2015-05-26

Studies have shown that metal oxide semiconductor field-effect transistors fabricated utilizing compound semiconductors as the channel are limited in their electrical performance. This is attributed to imperfections at the semiconductor/oxide interface which cause electronic trap states, resulting in inefficient modulation of the Fermi level. The physical origin of these states is still debated mainly because of the difficulty in assigning a particular electronic state to a specific physical defect. To gain insight into the exact source of the electronic trap states, density functional theory was employed to model the intrinsic physical defects on the InGaAs (2 × 4) surface and to model the effective passivation of these defects by utilizing both an oxidant and a reductant to eliminate metallic bonds and dangling-bond-induced strain at the interface. Scanning tunneling microscopy and spectroscopy were employed to experimentally determine the physical and electronic defects and to verify the effectiveness of dual passivation with an oxidant and a reductant. While subsurface chemisorption of oxidants on compound semiconductor substrates can be detrimental, it has been shown theoretically and experimentally that oxidants are critical to removing metallic defects at oxide/compound semiconductor interfaces present in nanoscale channels, oxides, and other nanostructures.

Electron beam generation and structure of defects in carbon and boron nitride nano-tubes

Energy Technology Data Exchange (ETDEWEB)

Zobelli, A

2007-10-15

The nature and role of defects is of primary importance to understand the physical properties of C and BN (boron nitride) single walled nano-tubes (SWNTs). Transmission electron microscopy (TEM) is a well known powerful tool to study the structure of defects in materials. However, in the case of SWNTs, the electron irradiation of the TEM may knock out atoms. This effect may alter the native structure of the tube, and has also been proposed as a potential tool for nano-engineering of nano-tubular structures. Here we develop a theoretical description of the irradiation mechanism. First, the anisotropy of the emission energy threshold is obtained via density functional based calculations. Then, we numerically derive the total Mott cross section for different emission sites of carbon and boron nitride nano-tubes with different chiralities. Using a dedicated STEM (Scanning Transmission Electron Microscope) microscope with experimental conditions optimised on the basis of derived cross-sections, we are able to control the generation of defects in nano-tubular systems. Either point or line defects can be obtained with a spatial resolution of a few nanometers. The structure, energetics and electronics of point and line defects in BN systems have been investigated. Stability of mono- and di- vacancy defects in hexagonal boron nitride layers is investigated, and their activation energies and reaction paths for diffusion have been derived using the nudged elastic band method (NEB) combined with density functional based techniques. We demonstrate that the appearance of extended linear defects under electron irradiation is more favorable than a random distribution of point defects and this is due to the existence of preferential sites for atom emission in the presence of pre-existing defects, rather than thermal vacancy nucleation and migration. (author)

Electron beam generation and structure of defects in carbon and boron nitride nano-tubes

International Nuclear Information System (INIS)

Zobelli, A.

2007-10-01

The nature and role of defects is of primary importance to understand the physical properties of C and BN (boron nitride) single walled nano-tubes (SWNTs). Transmission electron microscopy (TEM) is a well known powerful tool to study the structure of defects in materials. However, in the case of SWNTs, the electron irradiation of the TEM may knock out atoms. This effect may alter the native structure of the tube, and has also been proposed as a potential tool for nano-engineering of nano-tubular structures. Here we develop a theoretical description of the irradiation mechanism. First, the anisotropy of the emission energy threshold is obtained via density functional based calculations. Then, we numerically derive the total Mott cross section for different emission sites of carbon and boron nitride nano-tubes with different chiralities. Using a dedicated STEM (Scanning Transmission Electron Microscope) microscope with experimental conditions optimised on the basis of derived cross-sections, we are able to control the generation of defects in nano-tubular systems. Either point or line defects can be obtained with a spatial resolution of a few nanometers. The structure, energetics and electronics of point and line defects in BN systems have been investigated. Stability of mono- and di- vacancy defects in hexagonal boron nitride layers is investigated, and their activation energies and reaction paths for diffusion have been derived using the nudged elastic band method (NEB) combined with density functional based techniques. We demonstrate that the appearance of extended linear defects under electron irradiation is more favorable than a random distribution of point defects and this is due to the existence of preferential sites for atom emission in the presence of pre-existing defects, rather than thermal vacancy nucleation and migration. (author)

Feasibility of identifying families for genetic studies of birth defects using the National Health Interview Survey

Directory of Open Access Journals (Sweden)

Nolan Vikki G

2004-05-01

Full Text Available Abstract Background The purpose of this study was to determine whether the National Health Interview Survey is a useful source to identify informative families for genetic studies of birth defects. Methods The 1994/1995 National Health Interview Survey (NHIS was used to identify households where individuals with two or more birth defects reside. Four groups of households were identified: 1 single non-familial (one individual with one birth defect; 2 single familial (more than one individual with one birth defect; 3 multiple non-familial (one individual with more than one birth defect, and 4 multiple familial (more than one individual with more than one birth defect. The March 2000 U.S. Census on households was used to estimate the total number of households in which there are individuals with birth defects. Results Of a total of 28,094 households and surveyed about birth defects and impairments, 1,083 single non-familial, 55 multiple non-familial, 54 single familial, and 8 multiple familial households were identified. Based on the 2000 U.S. census, it is estimated that there are 4,472,385 households where at least one person has one birth defect in the United States and in 234,846 of them there are at least two affected individuals. Western states had the highest prevalence rates. Conclusions Population-based methods, such as the NHIS, are modestly useful to identify the number and the regions where candidate families for genetic studies of birth defects reside. Clinic based studies and birth defects surveillance systems that collect family history offer better probability of ascertainment.

Defect structures in YBa2Cu3O/sub 7-x/ produced by electron irradiation

International Nuclear Information System (INIS)

Kirk, M.A.; Baker, M.C.; Liu, J.Z.; Lam, D.J.; Weber, H.W.

1987-12-01

Defect structures in YBa 2 Cu 3 O/sub 7-x/ produced by electron irradiation at 300 0 K were investigated by transmission electron microscopy. Threshold energies for the production of visible defects were determined to be 152 keV and 131 keV (+- 7 keV) in directions near the a and b (b > a) axes (both perpendicular to c, the long axis in the orthorhombic structure), respectively. During above threshold irradiations in an electron flux of 3 x 10 18 cm -2 s -1 , extended defects were observed to form and grow to sizes of 10 to 50 nm over 1000 s in material thicknesses 20 to 200 nm. Such low electron threshold energies suggest oxygen atom displacements with recoil energies near 20 eV. The observation of movement of twin boundaries during irradiation just above threshold suggests movement of the basal plane oxygen atoms by direct displacement or defect migration processes. Crystals irradiated above threshold were observed after about 24 hours to have transformed to a structure heavily faulted on planes perpendicular to the c axis. 3 refs., 3 figs

Extended storage of low-level radioactive waste: an update

International Nuclear Information System (INIS)

Siskind, B.

1986-01-01

If a state or regional compact does not have adequate disposal capacity for low-level radioactive waste (LLRW), then extended storage of certain LLRW may be necessary. The Nuclear Regulatory Commission (NRC) has contracted with Brookhaven National Laboratory to address the technical issues of extended storage. The dual objectives of this study are (1) to provide practical technical assessments for NRC to consider in evaluating specific proposals for extended storage and (2) to help ensure adequate consideration by NRC, Agreement States, and licensees of potential problems that may arise from existing or proposed extended storage practices. The circumstances under which extended storage of LLRW would most likely result in problems during or after the extended storage period are considered and possible mitigative measures to minimize these problems are discussed. These potential problem areas include: (1) the degradation of carbon steel and polyethylene containers during storage and the subsequent need for repackaging (resulting in increased occupational exposure), (2) the generation of hazardous gases during storage, and (3) biodegradative processes in LLRW

Extended storage of low-level radioactive waste: an update

Energy Technology Data Exchange (ETDEWEB)

Siskind, B.

1986-01-01

If a state or regional compact does not have adequate disposal capacity for low-level radioactive waste (LLRW), then extended storage of certain LLRW may be necessary. The Nuclear Regulatory Commission (NRC) has contracted with Brookhaven National Laboratory to address the technical issues of extended storage. The dual objectives of this study are (1) to provide practical technical assessments for NRC to consider in evaluating specific proposals for extended storage and (2) to help ensure adequate consideration by NRC, Agreement States, and licensees of potential problems that may arise from existing or proposed extended storage practices. The circumstances under which extended storage of LLRW would most likely result in problems during or after the extended storage period are considered and possible mitigative measures to minimize these problems are discussed. These potential problem areas include: (1) the degradation of carbon steel and polyethylene containers during storage and the subsequent need for repackaging (resulting in increased occupational exposure), (2) the generation of hazardous gases during storage, and (3) biodegradative processes in LLRW.

Fibrous metaphyseal defects

International Nuclear Information System (INIS)

Ritschl, P.; Hajek, P.C.; Pechmann, U.

1989-01-01

Sixteen patients with fibrous metaphyseal defects were examined with both plain radiography and magnetic resonance (MR) imaging. Depending on the age of the fibrous metaphyseal defects, characteristic radiomorphologic changes were found which correlated well with MR images. Following intravenous Gadolinium-DTPA injection, fibrous metaphyseal defects invariably exhibited a hyperintense border and signal enhancement. (orig./GDG)

Vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association with Mayer-Rokitansky-Küster-Hauser syndrome in co-occurrence: two case reports and a review of the literature.