Exchange magnon induced resistance asymmetry in permalloy spin-Hall oscillators

Energy Technology Data Exchange (ETDEWEB)

Langenfeld, S. [Microelectronics Group, Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE (United Kingdom); Walter Schottky Institut and Physik-Department, Technische Universität München, 85748 Garching (Germany); Tshitoyan, V.; Fang, Z.; Ferguson, A. J., E-mail: ajf1006@cam.ac.uk [Microelectronics Group, Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE (United Kingdom); Wells, A.; Moore, T. A. [School of Physics and Astronomy, University of Leeds, Leeds, LS2 9JT (United Kingdom)

2016-05-09

We investigate magnetization dynamics in a spin-Hall oscillator using a direct current measurement as well as conventional microwave spectrum analysis. When the current applies an anti-damping spin-transfer torque, we observe a change in resistance which we ascribe mainly to the excitation of incoherent exchange magnons. A simple model is developed based on the reduction of the effective saturation magnetization, quantitatively explaining the data. The observed phenomena highlight the importance of exchange magnons on the operation of spin-Hall oscillators.

Multi-Valued Planar Hall Resistance Manipulated by Current Induced Magnetic Field in Fe Films Grown on GaAs(001) Substrates

Science.gov (United States)

Khym, Sungwon; Yoo, Taehee; Lee, Hakjoon; Lee, Sangyeop; Lee, Sanghoon; Liu, Xinyu; Furdyna, Jacek K.; Lee, Dong Uk; Kim, Eun Kyu

2012-09-01

A Hall device was fabricated from single-crystal Fe film having two in-plane magnetic easy axes. Planar Hall resistance measured by sequential application of current pulses to the metal strip that was deposited on the top of a Hall bar showed a hysteresis similar to that observed by scanning an external magnetic field. It was shown that discrete Hall resistance values in the hysteresis, which correspond to specific multidomain structures in Fe film, can be created by the application of appropriate sequences of current pulses to the metal strip, and can thus be used for read/write logic applications.

New Trends in Magnetic Exchange Bias

Science.gov (United States)

Mougin, Alexandra; Mangin, Stéphane; Bobo, Jean-Francois; Loidl, Alois

2005-05-01

The study of layered magnetic structures is one of the hottest topics in magnetism due to the growing attraction of applications in magnetic sensors and magnetic storage media, such as random access memory. For almost half a century, new discoveries have driven researchers to re-investigate magnetism in thin film structures. Phenomena such as giant magnetoresistance, tunneling magnetoresistance, exchange bias and interlayer exchange coupling led to new ideas to construct devices, based not only on semiconductors but on a variety of magnetic materials Upon cooling fine cobalt particles in a magnetic field through the Néel temperature of their outer antiferromagnetic oxide layer, Meiklejohn and Bean discovered exchange bias in 1956. The exchange bias effect through which an antiferromagnetic AF layer can cause an adjacent ferromagnetic F layer to develop a preferred direction of magnetization, is widely used in magnetoelectronics technology to pin the magnetization of a device reference layer in a desired direction. However, the origin and effects due to exchange interaction across the interface between antiferromagneic and ferromagnetic layers are still debated after about fifty years of research, due to the extreme difficulty associated with the determination of the magnetic interfacial structure in F/AF bilayers. Indeed, in an AF/F bilayer system, the AF layer acts as “the invisible man” during conventional magnetic measurements and the presence of the exchange coupling is evidenced indirectly through the unusual behavior of the adjacent F layer. Basically, the coercive field of the F layer increases in contact with the AF and, in some cases, its hysteresis loop is shifted by an amount called exchange bias field. Thus, AF/F exchange coupling generates a new source of anisotropy in the F layer. This induced anisotropy strongly depends on basic features such as the magnetocrystalline anisotropy, crystallographic and spin structures, defects, domain patterns etc

Exchange bias in nearly perpendicularly coupled ferromagnetic/ferromagnetic system

International Nuclear Information System (INIS)

Bu, K.M.; Kwon, H.Y.; Oh, S.W.; Won, C.

2012-01-01

Exchange bias phenomena appear not only in ferromagnetic/antiferromagnetic systems but also in ferromagnetic/ferromagnetic systems in which two layers are nearly perpendicularly coupled. We investigated the origin of the symmetry-breaking mechanism and the relationship between the exchange bias and the system's energy parameters. We compared the results of computational Monte Carlo simulations with those of theoretical model calculation. We found that the exchange bias exhibited nonlinear behaviors, including sign reversal and singularities. These complicated behaviors were caused by two distinct magnetization processes depending on the interlayer coupling strength. The exchange bias reached a maximum at the transition between the two magnetization processes. - Highlights: ► Exchange bias phenomena are found in perpendicularly coupled F/F systems. ► Exchange bias exhibits nonlinear behaviors, including sign reversal and singularities. ► These complicated behaviors were caused by two distinct magnetization processes. ► Exchange bias reached a maximum at the transition between the two magnetization processes. ► We established an equation to maximize the exchange bias in perpendicularly coupled F/F system.

Relation of planar Hall and planar Nernst effects in thin film permalloy

Science.gov (United States)

Wesenberg, D.; Hojem, A.; Bennet, R. K.; Zink, B. L.

2018-06-01

We present measurements of the planar Nernst effect (PNE) and the planar Hall effect (PHE) of nickel-iron (Ni–Fe) alloy thin films. We suspend the thin-film samples, measurement leads, and lithographically-defined heaters and thermometers on silicon-nitride membranes to greatly simplify control and measurement of thermal gradients essential to quantitative determination of magnetothermoelectric effects. Since these thermal isolation structures allow measurements of longitudinal thermopower, or the Seebeck coefficient, and four-wire electrical resistivity of the same thin film, we can quantitatively demonstrate the link between the longitudinal and transverse effects as a function of applied in-plane field and angle. Finite element thermal analysis of this essentially 2D structure allows more confident determination of the thermal gradient, which is reduced from the simplest assumptions due to the particular geometry of the membranes, which are more than 350 μm wide in order to maximize sensitivity to transverse thermoelectric effects. The resulting maximum values of the PNE and PHE coefficients for the Ni–Fe film with 80% Ni we study here are and , respectively. All signals are exclusively symmetry with applied field, ruling out long-distance spin transport effects. We also consider a Mott-like relation between the PNE and PHE, and use both this and the standard Mott relation to determine the energy-derivative of the resistivity at the Fermi energy to be , which is very similar to values for films we previously measured using similar thermal platforms. Finally, using an estimated value for the lead contribution to the longitudinal thermopower, we show that the anisotropic magnetoresistance (AMR) ratio in this Ni–Fe film is two times larger than the magnetothermopower ratio, which is the first evidence of a deviation from strict adherence to the Mott relation between Seebeck coefficient and resistivity.

Giant exchange bias in MnPd/Co bilayers

International Nuclear Information System (INIS)

Nguyen Thanh Nam; Nguyen Phu Thuy; Nguyen Anh Tuan; Nguyen Nguyen Phuoc; Suzuki, Takao

2007-01-01

A systematic study of exchange bias in MnPd/Co bilayers has been carried out, where the dependences of exchange bias, unidirectional anisotropy constant and coercivity on the thicknesses of MnPd and Co layers were investigated. A huge unidirectional anisotropy constant, J K =2.5erg/cm 2 was observed, which is in reasonable agreement with the theoretical prediction based on the model by Meiklejohn and Bean. The angular dependences of exchange bias field and coercivity have also been examined showing that both exchange bias and coercivity follow 1/cosα rule

Measurements of Hk and Ms in thin magnetic films by the angular dependence of the planar Hall effect

Science.gov (United States)

Vatskicheva, M.; Vatskichev, L.

1987-11-01

It is shown that the angular dependences of the planar Hall effect measured with infinite magnetic field and with magnetic field H⩾ Hk have an intersection point and this fact is enough for measuring the anisotropy field Hk applying the method presented by Pastor, Ferreiro and Torres in J. Magn. Magn. Mat. 53 (1986) 349, 62 (1986) 101. The scaling of the Hall tension U proportional to M2s in mV/Am -1 gives a possibility for calculating the Ms-values of the films. These assumptions are verified for NiFe- and NiFeGe films with a uniaxial magnetic anisotropy.

Planar Hall effect sensor bridge geometries optimized for magnetic bead detection

DEFF Research Database (Denmark)

Østerberg, Frederik Westergaard; Rizzi, Giovanni; Henriksen, Anders Dahl

2014-01-01

Novel designs of planar Hall effect bridge sensors optimized for magnetic bead detection are presented and characterized. By constructing the sensor geometries appropriately, the sensors can be tailored to be sensitive to an external magnetic field, the magnetic field due to beads being magnetized...... by the sensor self-field or a combination thereof. The sensors can be made nominally insensitive to small external magnetic fields, while being maximally sensitive to magnetic beads, magnetized by the sensor self-field. Thus, the sensor designs can be tailored towards specific applications with minimal...... of the dynamic magnetic response of suspensions of magnetic beads with a nominal diameter of 80 nm are performed. Furthermore, a method to amplify the signal by appropriate combinations of multiple sensor segments is demonstrated....

B-periodic oscillations in the Hall-resistance induced by a dc-current-bias under combined microwave-excitation and dc-current bias in the GaAs/AlGaAs 2D system.

Science.gov (United States)

Liu, Han-Chun; Reichl, C; Wegscheider, W; Mani, R G

2018-05-18

We report the observation of dc-current-bias-induced B-periodic Hall resistance oscillations and Hall plateaus in the GaAs/AlGaAs 2D system under combined microwave radiation- and dc bias excitation at liquid helium temperatures. The Hall resistance oscillations and plateaus appear together with concomitant oscillations also in the diagonal magnetoresistance. The periods of Hall and diagonal resistance oscillations are nearly identical, and source power (P) dependent measurements demonstrate sub-linear relationship of the oscillation amplitude with P over the span 0 < P ≤ 20 mW.

Exchange bias mediated by interfacial nanoparticles (invited)

Energy Technology Data Exchange (ETDEWEB)

Berkowitz, A. E., E-mail: aberk@ucsd.edu [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Center for Magnetic Recording Research, University of California, California 92093 (United States); Sinha, S. K. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Fullerton, E. E. [Center for Magnetic Recording Research, University of California, California 92093 (United States); Smith, D. J. [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

2015-05-07

The objective of this study on the iconic exchange-bias bilayer Permalloy/CoO has been to identify those elements of the interfacial microstructure and accompanying magnetic properties that are responsible for the exchange-bias and hysteretic properties of this bilayer. Both epitaxial and polycrystalline samples were examined. X-ray and neutron reflectometry established that there existed an interfacial region, of width ∼1 nm, whose magnetic properties differed from those of Py or CoO. A model was developed for the interfacial microstructure that predicts all the relevant properties of this system; namely; the temperature and Permalloy thickness dependence of the exchange-bias, H{sub EX}, and coercivity, H{sub C}; the much smaller measured values of H{sub EX} from what was nominally expected; the different behavior of H{sub EX} and H{sub C} in epitaxial and polycrystalline bilayers. A surprising result is that the exchange-bias does not involve direct exchange-coupling between Permalloy and CoO, but rather is mediated by CoFe{sub 2}O{sub 4} nanoparticles in the interfacial region.

Hall current effects in dynamic magnetic reconnection solutions

International Nuclear Information System (INIS)

Craig, I.J.D.; Heerikhuisen, J.; Watson, P.G.

2003-01-01

The impact of Hall current contributions on flow driven planar magnetic merging solutions is discussed. The Hall current is important if the dimensionless Hall parameter (or normalized ion skin depth) satisfies c H >η, where η is the inverse Lundquist number for the plasma. A dynamic analysis of the problem shows, however, that the Hall current initially manifests itself, not by modifying the planar reconnection field, but by inducing a non-reconnecting perpendicular 'separator' component in the magnetic field. Only if the stronger condition c H 2 >η is satisfied can Hall currents be expected to affect the planar merging. These analytic predictions are then tested by performing a series of numerical experiments in periodic geometry, using the full system of planar magnetohydrodynamic (MHD) equations. The numerical results confirm that the nature of the merging changes dramatically when the Hall coupling satisfies c H 2 >η. In line with the analytic treatment of sheared reconnection, the coupling provided by the Hall term leads to the emergence of multiple current layers that can enhance the global Ohmic dissipation at the expense of the reconnection rate. However, the details of the dissipation depend critically on the symmetries of the simulation, and when the merging is 'head-on' (i.e., comprises fourfold symmetry) the reconnection rate can be enhanced

Bias-trigger manipulation and task-form understanding in Monty Hall

OpenAIRE

Kaivanto, Kim; Kroll, Eike B.; Zabinski, Michael

2014-01-01

Monty Hall is a difficult task which triggers multiple biases. With sophisticated subjects and treatments that reverse and eliminate these triggers, non-rational choice is greatly reduced. Among task-familiar subjects, non-rational choice can can fall to background-error levels. But as our data also show, task-form recognition is necessary but not sufficient for rational choice when the task calls for conditional probability reasoning rather than simple rule-based behavior, as in e.g. 'Switch...

Magnetic stability in exchange-spring and exchange bias systems after multiple switching cycles.

Energy Technology Data Exchange (ETDEWEB)

Jiang, J. S.; Inomata, A.; You, C.-Y.; Pearson, J. E.; Bader, S. D.

2001-06-01

We have studied the magnetic stability in exchange bias and exchange spring systems prepared via epitaxial sputter deposition. The two interfacial exchange coupled systems, Fe/Cr(211) double superlattices consisting of a ferromagnetic and an antiferromagnetic Fe/Cr superlattice that are exchange coupled through a Cr spacer, and Sin-Co/Fe exchange-spring bilayer structures with ferromagnetically coupled hard Sin-Co layer and soft Fe layer, were epitaxially grown on suitably prepared Cr buffer layers to give rise to different microstructure and magnetic anisotropy. The magnetic stability was investigated using the magneto-optic Kerr effect during repeated reversal of the soft layer magnetization by field cycling up to 10{sup 7} times. For uniaxial Fe/Cr exchange biased double superlattices and exchange spring bilayers with uniaxial Sin-Co, small but rapid initial decay in the exchange bias field HE and in the remanent magnetization is observed. However, the exchange spring bilayers with biaxial and random in-plane anisotropy in the Sin-Co layer shows gradual decay in H{sub E} and without large reduction of the magnetization. The different decay behaviors are attributed to the different microstructure and spin configuration of the pinning layers.

Exchange bias in Fe/Cr double superlattices

International Nuclear Information System (INIS)

Jiang, J. S.; Felcher, G. P.; Inomata, A.; Goyette, R.; Nelson, C.; Bader, S. D.

1999-01-01

Utilizing the oscillatory interlayer exchange coupling in Fe/Cr superlattices, we have constructed ''double superlattice'' structures where a ferromagnetic (F) and an antiferromagnetic (AF) Fe/Cr superlattice are coupled through a Cr spacer. The minor hysteresis loops in the magnetization are shifted from zero field, i.e., the F superlattice is exchange biased by the AF one. The double superlattices are sputter-deposited with (211) epitaxy and possess uniaxial in-plane magnetic anisotropy. The magnitude of the bias field is satisfactorily described by the classic formula for collinear spin structures. The coherent structure and insensitivity to atomic-scale roughness makes it possible to determine the spin distribution by polarized neutron reflectivity, which confirms that the spin structure is collinear. The magnetic reversal behavior of the double superlattices suggests that a realistic model of exchange bias needs to address the process of nucleating local reverse domains

Exchange bias in Fe/Cr double superlattices

International Nuclear Information System (INIS)

Jiang, J. S.; Felcher, G. P.; Inomata, A.; Goyette, R.; Nelson, C. S.; Bader, S. D.

2000-01-01

Utilizing the oscillatory interlayer exchange coupling in Fe/Cr superlattices, we have constructed ''double superlattice'' structures where a ferromagnetic (F) and an antiferromagnetic (AF) Fe/Cr superlattice are coupled through a Cr spacer. The minor hysteresis loops in the magnetization are shifted from zero field, i.e., the F superlattice is exchange biased by the AF one. The double superlattices are sputter deposited with (211) epitaxy and possess uniaxial in-plane magnetic anisotropy. The magnitude of the bias field is satisfactorily described by the classic formula for collinear spin structures. The coherent structure and insensitivity to atomic-scale roughness makes it possible to determine the spin distribution by polarized neutron reflectivity, which confirms that the spin structure is collinear. The magnetic reversal behavior of the double superlattices suggests that a realistic model of exchange bias needs to address the process of nucleating local reverse domains. (c) 2000 American Vacuum Society

Role of the antiferromagnetic bulk spins in exchange bias

Energy Technology Data Exchange (ETDEWEB)

Schuller, Ivan K. [Center for Advanced Nanoscience and Physics Department, University of California San Diego, La Jolla, CA 92093 (United States); Morales, Rafael, E-mail: rafael.morales@ehu.es [Department of Chemical-Physics & BCMaterials, University of the Basque Country UPV/EHU (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain); Batlle, Xavier [Departament Física Fonamental and Institut de Nanociència i Nanotecnologia, Universitat de Barcelona, c/ Martí i Franqués s/n, 08028 Barcelona, Catalonia (Spain); Nowak, Ulrich [Department of Physics, University of Konstanz, 78464 Konstanz (Germany); Güntherodt, Gernot [Physics Institute (IIA), RWTH Aachen University, Campus RWTH-Melaten, 52074 Aachen (Germany)

2016-10-15

This “Critical Focused Issue” presents a brief review of experiments and models which describe the origin of exchange bias in epitaxial or textured ferromagnetic/antiferromagnetic bilayers. Evidence is presented which clearly indicates that inner, uncompensated, pinned moments in the bulk of the antiferromagnet (AFM) play a very important role in setting the magnitude of the exchange bias. A critical evaluation of the extensive literature in the field indicates that it is useful to think of this bulk, pinned uncompensated moments as a new type of a ferromagnet which has a low total moment, an ordering temperature given by the AFM Néel temperature, with parallel aligned moments randomly distributed on the regular AFM lattice. - Highlights: • We address the role of bulk antiferromagnetic spins in the exchange bias phenomenon. • Significant experiments on how bulk AFM spins determine exchange bias are highlighted. • We explain the model that accounts for experimental results.

Role of the antiferromagnetic bulk spins in exchange bias

International Nuclear Information System (INIS)

Schuller, Ivan K.; Morales, Rafael; Batlle, Xavier; Nowak, Ulrich; Güntherodt, Gernot

2016-01-01

This “Critical Focused Issue” presents a brief review of experiments and models which describe the origin of exchange bias in epitaxial or textured ferromagnetic/antiferromagnetic bilayers. Evidence is presented which clearly indicates that inner, uncompensated, pinned moments in the bulk of the antiferromagnet (AFM) play a very important role in setting the magnitude of the exchange bias. A critical evaluation of the extensive literature in the field indicates that it is useful to think of this bulk, pinned uncompensated moments as a new type of a ferromagnet which has a low total moment, an ordering temperature given by the AFM Néel temperature, with parallel aligned moments randomly distributed on the regular AFM lattice. - Highlights: • We address the role of bulk antiferromagnetic spins in the exchange bias phenomenon. • Significant experiments on how bulk AFM spins determine exchange bias are highlighted. • We explain the model that accounts for experimental results.

Exchange bias studied with polarized neutron reflectivity

International Nuclear Information System (INIS)

Velthuis, S. G. E. te

2000-01-01

The role of Polarized Neutron Reflectivity (PNR) for studying natural and synthetic exchange biased systems is illustrated. For a partially oxidized thin film of Co, cycling of the magnetic field causes a considerable reduction of the bias, which the onset of diffuse neutron scattering shows to be due to the loosening of the ferromagnetic domains. On the other hand, PNR measurements of a model exchange bias junction consisting of an n-layered Fe/Cr antiferromagnetic (AF) superlattice coupled with an m-layered Fe/Cr ferromagnetic (F) superlattice confirm the predicted collinear magnetization in the two superlattices. The two magnetized states of the F (along or opposite to the bias field) differ only in the relative orientation of the F and adjacent AF layer. The possibility of reading clearly the magnetic state at the interface pinpoints the commanding role that PNR is having in solving this intriguing problem

On-tip sub-micrometer Hall probes for magnetic microscopy prepared by AFM lithography

International Nuclear Information System (INIS)

Gregusova, D.; Martaus, J.; Fedor, J.; Kudela, R.; Kostic, I.; Cambel, V.

2009-01-01

We developed a technology of sub-micrometer Hall probes for future application in scanning hall probe microscopy (SHPM) and magnetic force microscopy (MFM). First, the Hall probes of ∼9-μm dimensions are prepared on the top of high-aspect-ratio GaAs pyramids with an InGaP/AlGaAs/GaAs active layer using wet-chemical etching and non-planar lithography. Then we show that the active area of planar Hall probes can be downsized to sub-micrometer dimensions by local anodic oxidation technique using an atomic force microscope. Such planar probes are tested and their noise and magnetic field sensitivity are evaluated. Finally, the two technologies are combined to fabricate sub-micrometer Hall probes on the top of high-aspect ratio mesa for future SHPM and MFM techniques.

Power module packaging with double sided planar interconnection and heat exchangers

Science.gov (United States)

Liang, Zhenxian; Marlino, Laura D.; Ning, Puqi; Wang, Fei

2015-05-26

A double sided cooled power module package having a single phase leg topology includes two IGBT and two diode semiconductor dies. Each IGBT die is spaced apart from a diode semiconductor die, forming a switch unit. Two switch units are placed in a planar face-up and face-down configuration. A pair of DBC or other insulated metallic substrates is affixed to each side of the planar phase leg semiconductor dies to form a sandwich structure. Attachment layers are disposed on outer surfaces of the substrates and two heat exchangers are affixed to the substrates by rigid bond layers. The heat exchangers, made of copper or aluminum, have passages for carrying coolant. The power package is manufactured in a two-step assembly and heating process where direct bonds are formed for all bond layers by soldering, sintering, solid diffusion bonding or transient liquid diffusion bonding, with a specially designed jig and fixture.

Room temperature exchange bias in SmFeO_3 single crystal

International Nuclear Information System (INIS)

Wang, Xiaoxiong; Cheng, Xiangyi; Gao, Shang; Song, Junda; Ruan, Keqing; Li, Xiaoguang

2016-01-01

Exchange bias phenomenon is generally ascribed to the unidirectional magnetic shift along the field axes at interface of two magnetic materials. Room temperature exchange bias is found in SmFeO_3 single crystal. The behavior after different cooling procedure is regular, and the training behavior is attributed to the athermal training and its pinning origin is attributed to the antiferromagnetic clusters. Its being single phase and occurring at room temperature make it an appropriate candidate for application. - Graphical abstract: Room temperature exchange bias was found in oxide single crystal. Highlights: • Room temperature exchange bias has been discovered in single-crystalline SmFeO_3. • Its pinning origin is attributed to the antiferromagnetic clusters. • Its being single phase and occurring at room temperature make it an appropriate candidate for application.

Ion channel electrophysiology via integrated planar patch-clamp chip with on-demand drug exchange.

Science.gov (United States)

Chen, Chang-Yu; Tu, Ting-Yuan; Jong, De-Shien; Wo, Andrew M

2011-06-01

Planar patch clamp has revolutionized characterization of ion channel behavior in drug discovery primarily via advancement in high throughput. Lab use of planar technology, however, addresses different requirements and suffers from inflexibility to enable wide range of interrogation via a single cell. This work presents integration of planar patch clamp with microfluidics, achieving multiple solution exchanges for tailor-specific measurement and allowing rapid replacement of the cell-contacting aperture. Studies via endogenously expressed ion channels in HEK 293T cells were commenced to characterize the device. Results reveal the microfluidic concentration generator produces distinct solution/drug combination/concentrations on-demand. Volume-regulated chloride channel and voltage-gated potassium channels in HEK 293T cells immersed in generated solutions under various osmolarities or drug concentrations show unique channel signature under specific condition. Excitation and blockage of ion channels in a single cell was demonstrated via serial solution exchange. Robustness of the reversible bonding and ease of glass substrate replacement were proven via repeated usage of the integrated device. The present approach reveals the capability and flexibility of integrated microfluidic planar patch-clamp system for ion channel assays. Copyright © 2011 Wiley Periodicals, Inc.

Anisotropic Magnus Force in Type-II Superconductors with Planar Defects

Science.gov (United States)

Monroy, Ricardo Vega; Gomez, Eliceo Cortés

2015-02-01

The effect of planar defects on the Magnus force in type-II superconductors is studied. It is shown that the deformation of the vortex due to the presence of a planar defect leads to a local decrease in the mean free path of electrons in the vortex. This effect reduces the effective Magnus coefficient in normal direction to the planar defect, leading to an anisotropic regime of the Hall effect. The presented developments here can qualitatively explain experimental observations of the anisotropic Hall effect in high- T c superconductors in the mixed state.

Interfacial spin cluster effects in exchange bias systems

Energy Technology Data Exchange (ETDEWEB)

Carpenter, R., E-mail: rc548@york.ac.uk; Vallejo-Fernandez, G.; O' Grady, K. [Department of Physics, The University of York, York YO10 5DD (United Kingdom)

2014-05-07

In this work, the effect of exchange bias on the hysteresis loop of CoFe is observed. The evolution of the coercivities and the shift of the hysteresis loop during the annealing process has been measured for films deposited on NiCr and Cu seed layers. Through comparison of the as deposited and field annealed loops, it is clear that for an exchange biased material, the two coercivities are due to different reversal processes. This behaviour is attributed to spin clusters at the ferromagnet/antiferromagnet interface, which behave in a similar manner to a fine particle system.

Giant anisotropic magnetoresistance and planar Hall effect in the Dirac semimetal Cd3As2

Science.gov (United States)

Li, Hui; Wang, Huan-Wen; He, Hongtao; Wang, Jiannong; Shen, Shun-Qing

2018-05-01

Anisotropic magnetoresistance is the change tendency of resistance of a material on the mutual orientation of the electric current and the external magnetic field. Here, we report experimental observations in the Dirac semimetal Cd3As2 of giant anisotropic magnetoresistance and its transverse version, called the planar Hall effect. The relative anisotropic magnetoresistance is negative and up to -68% at 2 K and 10 T. The high anisotropy and the minus sign in this isotropic and nonmagnetic material are attributed to a field-dependent current along the magnetic field, which may be induced by the Berry curvature of the band structure. This observation not only reveals unusual physical phenomena in Weyl and Dirac semimetals, but also finds additional transport signatures of Weyl and Dirac fermions other than negative magnetoresistance.

A study on investors’ personality characteristics and behavioral biases: Conservatism bias and availability bias in the Tehran Stock Exchange

Directory of Open Access Journals (Sweden)

Mahmoud Moradi

2013-04-01

Full Text Available Most economic and finance theories are based on the assumption that during economic decision making, people would act totally rational and consider all available information. Nevertheless, behavioral finance focuses on studying of the role of psychological factors on economic participants’ behavior. The study shows that in real-world environment, people are influenced by emotional and cognitive errors and may make irrational financial decisions. In many cases, the participants of financial markets are not aware of their talents for error in decision making, so they are dissatisfied with their investments by considering some behavioral biases decisions. These decisions may often yield undesirable outcomes, which could influence economy, significantly. This paper presents a survey on the relationship between personality dimensions with behavioral biases and availability bias among investment managers in the Tehran Stock Exchange using SPSS software, descriptive and inferential statistics. The necessary data are collected through questionnaire and they are analyzed using some statistical tests. The preliminary results indicate that there is a relationship between personality dimensions and behavioral biases like conservatism bias and availability bias among the investors in the Tehran Stock Exchange.

Enhanced exchange bias in MnN/CoFe bilayers after high-temperature annealing

Science.gov (United States)

Dunz, M.; Schmalhorst, J.; Meinert, M.

2018-05-01

We report an exchange bias of more than 2700 Oe at room temperature in MnN/CoFe bilayers after high-temperature annealing. We studied the dependence of exchange bias on the annealing temperature for different MnN thicknesses in detail and found that samples with tMnN > 32nm show an increase of exchange bias for annealing temperatures higher than TA = 400 °C. Maximum exchange bias values exceeding 2000 Oe with reasonably small coercive fields around 600 Oe are achieved for tMnN = 42, 48 nm. The median blocking temperature of those systems is determined to be 180 °C after initial annealing at TA = 525 °C. X-ray diffraction measurements and Auger depth profiling show that the large increase of exchange bias after high-temperature annealing is accompanied by strong nitrogen diffusion into the Ta buffer layer of the stacks.

Coexisting exchange bias effect and ferroelectricity in geometrically frustrated ZnCr2O4

Science.gov (United States)

Dey, J. K.; Majumdar, S.; Giri, S.

2018-06-01

Concomitant occurrence of exchange bias effect and ferroelectric order is revealed in antiferromagnetic spinel ZnCr2O4. The exchange bias effect is observed below antiferromagnetic Neél temperature (T N) with a reasonable value of exchange bias field ( Oe at 2 K). Intriguingly, the ratio is found unusually high as  ∼2.2, where H C is the coercivity. This indicates that large H C is not always primary for obtaining large exchange bias effect. Ferroelectric order is observed at T N, where non-centrosymmetric magnetic structure with space group associated with the magnetoelectric coupling correlates the ferroelectric order, proposing that, ZnCr2O4 is an improper multiferroic material. Rare occurrence of exchange bias effect and ferroelectric order in ZnCr2O4 attracts the community for fundamental interest and draws special attention in designing new materials for possible electric field control of exchange bias effect.

Exchange bias in Co nanoparticles embedded in an Mn matrix

International Nuclear Information System (INIS)

Domingo, Neus; Testa, Alberto M.; Fiorani, Dino; Binns, Chris; Baker, Stephen; Tejada, Javier

2007-01-01

Magnetic properties of Co nanoparticles of 1.8 nm diameter embedded in Mn and Ag matrices have been studied as a function of the volume fraction (VFF). While the Co nanoparticles in the Ag matrix show superparamagnetic behavior with T B =9.5 K (1.5% VFF) and T B =18.5 K (8.9% VFF), the Co nanoparticles in the antiferromagnetic Mn matrix show a transition peak at ∼65 K in the ZFC/FC susceptibility measurements, and an increase of the coercive fields at low temperature with respect to the Ag matrix. Exchange bias due to the interface exchange coupling between Co particles and the antiferromagnetic Mn matrix has also been studied. The exchange bias field (H eb ), observed for all Co/Mn samples below 40 K, decreases with decreasing volume fraction and with increasing temperature and depends on the field of cooling (H fc ). Exchange bias is accompanied by an increase of coercivity

In-plane and perpendicular exchange bias in [Pt/Co]/NiO multilayers

Energy Technology Data Exchange (ETDEWEB)

Lin, K.W.; Guo, J.Y.; Chang, S.C.; Ouyang, H. [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402 (China); Kahwaji, S.; Van Lierop, J. [Department of Physics and Astronomy, University of Manitoba, Winnipeg, R3T 2N2 (Canada); Phuoc, N.N.; Suzuki, T. [Information Storage Materials Laboratory, Toyota Technological Institute, Nagoya 468-8511 (Japan)

2007-12-15

Exchange bias in [Pt/Co]/NiO multilayers were studied as a function of film thickness and [Pt/Co] layer repetition. A strong temperature dependence of the coercivity, H{sub c}, and exchange bias field, H{sub ex}, was observed for the thick and thinnest [Pt/Co]/NiO multilayers. While the thinnest [Pt(3 nm)/Co(1.25 nm)]{sub 4}/NiO multilayers exhibits no in-plane exchange bias field, a perpendicular H{sub ex} {sub perpendicular} {sub to} {proportional_to} -150 Oe at 80 K was measured. By contrast, the thickest [Pt(12 nm)/Co(10 nm)]{sub 1}/NiO multilayers exhibited an in-plane H{sub ex//}{proportional_to}-600 Oe (with H{sub ex//}{proportional_to}-1300 Oe at 5 K) with no measurable perpendicular exchange bias field. The estimated interfacial exchange coupling energy implies the effective Co layer thickness contributing to the exchange bias is effective only in Co layer in contact with NiO bottom layer. AC susceptibility and the temperature dependence of H{sub ex} show that the a 1.25 nm thick Co component enables perpendicular exchange bias with a reduced blocking temperature T{sub B}{proportional_to}200 K, compared to that (T{sub B}{proportional_to}250 K) for the thick [Pt/Co]/NiO multilayers. This is attributed to disordered CoPt phases that formed due to intermixing between Co and Pt during deposition. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Enhanced exchange bias fields for CoO/Co bilayers: influence of antiferromagnetic grains and mechanisms

Energy Technology Data Exchange (ETDEWEB)

Chang, Cheng-Hsun-Tony; Chang, Shin-Chen [Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan (China); Tsay, Jyh-Shen, E-mail: jstsay@phy.ntnu.edu.tw [Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan (China); Yao, Yeong-Der [Institute of Physics, Academia Sinica, Nankang, Taipei 11529, Taiwan (China)

2017-05-31

Highlights: • An antiferromagnetic grain model on exchange bias phenomena is proposed. • Grain size and grain density are considered. • For smaller grain size, the dependence of t{sub CoO} on T{sub B} showed a less pronounced variation. • An increased grain density is responsible for the enhancement in the exchange bias fields. - Abstract: The emergence and optimization of devices that can be applied to spintronics have attracted considerable interest, and both experimental and theoretical approaches have been used in studies of exchange bias phenomena. A survey of the literature indicates that great efforts have been devoted to improving exchange bias fields, while only limited attempts have been made to control the temperature dependence of exchange bias. In this study, the influence of antiferromagnetic grains on exchange bias phenomena in CoO/Co bilayers on a semiconductor surface was investigated. Based on an antiferromagnetic grain model, a correlation between grain size, grain density, blocking temperature, and the exchange bias field was established. For crystallites with a smaller median diameter, the dependence of the thickness of the CoO layer on blocking temperature showed a less pronounced variation. This is due to the larger thermal agitation of the atomic spin moments in the grain, which causes a weaker exchange coupling between atomic spin moments. The enhanced density of antiferromagnetic/ferromagnetic pinning sites resulting from an increased grain density is responsible for the enhancement in the exchange bias fields. The results reported herein provide insights into our knowledge related to controlling the temperature dependence of exchange bias and related mechanisms.

Signal conditioning and processing for metallic Hall sensors.

Czech Academy of Sciences Publication Activity Database

Entler, Slavomír; Ďuran, Ivan; Sládek, P.; Vayakis, G.; Kočan, M.

2017-01-01

Roč. 123, November (2017), s. 783-786 ISSN 0920-3796. [SOFT 2016: Symposium on Fusion Technology /29./. Prague, 05.09.2016-09.09.2016] R&D Projects: GA MŠk LG14002 Institutional support: RVO:61389021 Keywords : Hall sensor * Lock-in * Synchronous detection * Current spinning * Hall effect * Planar hall effect suppression Subject RIV: JF - Nuclear Energetics OBOR OECD: Nuclear related engineering Impact factor: 1.319, year: 2016 http://www.sciencedirect.com/science/article/pii/S0920379617305070

Exchange bias energy in Co/Pt/IrMn multilayers with perpendicular and in-plane anisotropy

Energy Technology Data Exchange (ETDEWEB)

Czapkiewicz, M. [Department of Electronics, AGH University of Science and Technology, 30-059 Cracow (Poland)]. E-mail: czapkiew@agh.edu.pl; Stobiecki, T. [Department of Electronics, AGH University of Science and Technology, 30-059 Cracow (Poland); Rak, R. [Department of Electronics, AGH University of Science and Technology, 30-059 Cracow (Poland); Zoladz, M. [Department of Electronics, AGH University of Science and Technology, 30-059 Cracow (Poland); Dijken, S. van [CRANN and School of Physics, Trinity College, Dublin 2 (Ireland)

2007-09-15

The magnetization reversal process in perpendicularly biased [Pt/Co]{sub 3}/d{sub Pt} Pt/IrMn and in-plane biased Co/d{sub Pt} Pt/IrMn multilayers with 0nm=exchange bias field decreases monotonically with Pt insertion layer thickness, while its coercivity remains constant. The samples with perpendicular magnetic anisotropy, on the other hand, exhibit maximum exchange bias and minimum coercivity for d{sub Pt}=0.1nm. In both cases, the existence of large exchange bias fields correlates with a high domain density during magnetization reversal. The interface exchange coupling energy is larger for the in-plane biased films than for the perpendicularly biased multilayers.

Spontaneous exchange bias formation driven by a structural phase transition in the antiferromagnetic material.

Science.gov (United States)

Migliorini, A; Kuerbanjiang, B; Huminiuc, T; Kepaptsoglou, D; Muñoz, M; Cuñado, J L F; Camarero, J; Aroca, C; Vallejo-Fernández, G; Lazarov, V K; Prieto, J L

2018-01-01

Most of the magnetic devices in advanced electronics rely on the exchange bias effect, a magnetic interaction that couples a ferromagnetic and an antiferromagnetic material, resulting in a unidirectional displacement of the ferromagnetic hysteresis loop by an amount called the 'exchange bias field'. Setting and optimizing exchange bias involves cooling through the Néel temperature of the antiferromagnetic material in the presence of a magnetic field. Here we demonstrate an alternative process for the generation of exchange bias. In IrMn/FeCo bilayers, a structural phase transition in the IrMn layer develops at room temperature, exchange biasing the FeCo layer as it propagates. Once the process is completed, the IrMn layer contains very large single-crystal grains, with a large density of structural defects within each grain, which are promoted by the FeCo layer. The magnetic characterization indicates that these structural defects in the antiferromagnetic layer are behind the resulting large value of the exchange bias field and its good thermal stability. This mechanism for establishing the exchange bias in such a system can contribute towards the clarification of fundamental aspects of this exchange interaction.

Controlling exchange bias in Co-CoOx nanoparticles by oxygen content

International Nuclear Information System (INIS)

Kovylina, Miroslavna; Muro, Montserrat GarcIa del; Konstantinovic, Zorica; Iglesias, Oscar; Labarta, AmIlcar; Batlle, Xavier; Varela, Manuel

2009-01-01

We report on the occurrence of exchange bias on laser-ablated granular thin films composed of Co nanoparticles embedded in an amorphous zirconia matrix. The deposition method allows one to control the degree of oxidation of the Co particles by tuning the oxygen pressure at the vacuum chamber (from 2 x 10 -5 to 10 -1 mbar). The nature of the nanoparticles embedded in the nonmagnetic matrix is monitored from metallic, ferromagnetic (FM) Co to antiferromagnetic (AFM) CoO x , with a FM/AFM intermediate regime for which the percentage of the AFM phase can be increased at the expense of the FM phase, leading to the occurrence of exchange bias in particles of about 2 nm in size. For an oxygen pressure of about 10 -3 mbar the ratio between the FM and AFM phases is optimum with an exchange bias field of about 900 Oe at 1.8 K. The mutual exchange coupling between the AFM and FM is also at the origin of the induced exchange anisotropy on the FM leading to high irreversible hysteresis loops, and the blocking of the AFM clusters due to proximity to the FM phase.

Dipole-induced exchange bias.

Science.gov (United States)

Torres, Felipe; Morales, Rafael; Schuller, Ivan K; Kiwi, Miguel

2017-11-09

The discovery of dipole-induced exchange bias (EB), switching from negative to positive sign, is reported in systems where the antiferromagnet and the ferromagnet are separated by a paramagnetic spacer (AFM-PM-FM). The magnitude and sign of the EB is determined by the cooling field strength and the PM thickness. The same cooling field yields negative EB for thin spacers, and positive EB for thicker ones. The EB decay profile as a function of the spacer thickness, and the change of sign, are attributed to long-ranged dipole coupling. Our model, which accounts quantitatively for the experimental results, ignores the short range interfacial exchange interactions of the usual EB theories. Instead, it retains solely the long range dipole field that allows for the coupling of the FM and AFM across the PM spacer. The experiments allow for novel switching capabilities of long range EB systems, while the theory allows description of the structures where the FM and AFM are not in atomic contact. The results provide a new approach to design novel interacting heterostructures.

The quantum anomalous Hall effect on a star lattice with spin-orbit coupling and an exchange field

International Nuclear Information System (INIS)

Chen Mengsu; Wan Shaolong

2012-01-01

We study a star lattice with Rashba spin-orbit coupling and an exchange field and find that there is a quantum anomalous Hall effect in this system, and that there are five energy gaps at Dirac points and quadratic band crossing points. We calculate the Berry curvature distribution and obtain the Hall conductivity (Chern number ν) quantized as integers, and find that ν =- 1,2,1,1,2 when the Fermi level lies in these five gaps. Our model can be viewed as a general quantum anomalous Hall system and, in limit cases, can give what the honeycomb lattice and kagome lattice give. We also find that there is a nearly flat band with ν = 1 which may provide an opportunity for realizing the fractional quantum anomalous Hall effect. Finally, the chiral edge states on a zigzag star lattice are given numerically, to confirm the topological property of this system. (paper)

Magnetic charge distribution and stray field landscape of asymmetric néel walls in a magnetically patterned exchange bias layer system

Science.gov (United States)

Zingsem, Norbert; Ahrend, Florian; Vock, Silvia; Gottlob, Daniel; Krug, Ingo; Doganay, Hatice; Holzinger, Dennis; Neu, Volker; Ehresmann, Arno

2017-12-01

The 3D stray field landscape above an exchange bias layer system with engineered domain walls has been fully characterized by quantitative magnetic force microscopy (qMFM) measurements. This method is based on a complete quantification of the MFM tip’s imaging properties and the subtraction of its contribution from the measured MFM data by deconvolution in Fourier space. The magnetically patterned Ir17Mn83/Co70Fe30-exchange-bias-multilayers have been designed to contain asymmetric head-to-head (hh)/tail-to-tail (tt) Néel walls between domains of different magnetic anisotropies for potential use in guided particle transport. In the current application, qMFM reveals the effective magnetic charge profile on the surface of the sample—with high spatial resolution and in an absolute quantitative manner. These data enable to calculate the magnetostatic potential and the full stray field landscape above the sample surface. It has been successfully tested against: (i) micromagnetic simulations of the magnetization structure of a comparable exchange-bias layer system, (ii) measurements of the magnetization profile across the domain boundary with x-ray photoemission electron microscopy, and (iii) direct stray field measurements obtained by scanning Hall probe microscopy at elevated scan heights. This approach results in a quantitative determination of the stray field landscape at close distances to the sample surface, which will be of importance for remote magnetic particle transport applications in lab-on-a-chip devices. Furthermore, the highly resolving and quantitative MFM approach reveals details of the domain transition across the artificially structured phase boundary, which have to be attributed to a continuous change in the materials parameters across this boundary, rather than an abrupt one.

Memory effect versus exchange bias for maghemite nanoparticles

International Nuclear Information System (INIS)

Nadeem, K.; Krenn, H.; Szabó, D.V.

2015-01-01

We studied the temperature dependence of memory and exchange bias effects and their dependence on each other in maghemite (γ-Fe 2 O 3 ) nanoparticles by using magnetization studies. Memory effect in zero field cooled process in nanoparticles is a fingerprint of spin-glass behavior which can be due to i) surface disordered spins (surface spin-glass) and/or ii) randomly frozen and interacting nanoparticles core spins (super spin-glass). Temperature region (25–70 K) for measurements has been chosen just below the average blocking temperature (T B =75 K) of the nanoparticles. Memory effect (ME) shows a non-monotonous behavior with temperature. It shows a decreasing trend with decreasing temperature and nearly vanishes below 30 K. However it also decreased again near the blocking temperature of the nanoparticles e.g., 70 K. Exchange bias (EB) in these nanoparticles arises due to core/shell interface interactions. The EB increases sharply below 30 K due to increase in core/shell interactions, while ME starts vanishing below 30 K. We conclude that the core/shell interface interactions or EB have not enhanced the ME but may reduce it in these nanoparticles. - Highlights: • We studied the T-dependent memory and exchange bias (EB) effects in maghemite nanoparticles. • EB causes spin-canting at the core/shell interface which may reduces the memory effect (ME). • Interface interactions does not increase the ME in these nanoparticles

Memory effect versus exchange bias for maghemite nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Nadeem, K., E-mail: kashif.nadeem@iiu.edu.pk [Materials Research Laboratory, Department of Physics, International Islamic University, Islamabad (Pakistan); Krenn, H. [Institute of Physics, Karl-Franzens University Graz, Universitätsplatz 5, A-8010 Graz (Austria); Szabó, D.V. [Karlsruhe Institute of Technology, Institute for Applied Materials, 76344 Eggenstein-Leopoldshafen (Germany)

2015-11-01

We studied the temperature dependence of memory and exchange bias effects and their dependence on each other in maghemite (γ-Fe{sub 2}O{sub 3}) nanoparticles by using magnetization studies. Memory effect in zero field cooled process in nanoparticles is a fingerprint of spin-glass behavior which can be due to i) surface disordered spins (surface spin-glass) and/or ii) randomly frozen and interacting nanoparticles core spins (super spin-glass). Temperature region (25–70 K) for measurements has been chosen just below the average blocking temperature (T{sub B}=75 K) of the nanoparticles. Memory effect (ME) shows a non-monotonous behavior with temperature. It shows a decreasing trend with decreasing temperature and nearly vanishes below 30 K. However it also decreased again near the blocking temperature of the nanoparticles e.g., 70 K. Exchange bias (EB) in these nanoparticles arises due to core/shell interface interactions. The EB increases sharply below 30 K due to increase in core/shell interactions, while ME starts vanishing below 30 K. We conclude that the core/shell interface interactions or EB have not enhanced the ME but may reduce it in these nanoparticles. - Highlights: • We studied the T-dependent memory and exchange bias (EB) effects in maghemite nanoparticles. • EB causes spin-canting at the core/shell interface which may reduces the memory effect (ME). • Interface interactions does not increase the ME in these nanoparticles.

Electric field-controlled magnetization in exchange biased IrMn/Co/PZT multilayers

International Nuclear Information System (INIS)

Huong Giang, D T; Duc, N H; Agnus, G; Maroutian, T; Lecoeur, P

2013-01-01

Electric-field modulating exchange bias and near 180° deterministic magnetization switching at room temperature are demonstrated in simple antiferromagnetic/ferromagnetic/ferroelectric (AFM/FM/FE) exchange-coupled multiferroic multilayers of IrMn/Co/PZT. A rather large exchange bias field shift up to ΔH ex /H ex = 500% was obtained. This change governs mainly the electric-field strength rather than the applied current. It is explained as being realized through the competition between the electric-field induced uniaxial and unidirectional anisotropies. These results show good prospects for low-power spintronic devices. (paper)

Characterization of the magnetic anisotropy in thin films of La1-xSrxMnO3 using the planar Hall effect

International Nuclear Information System (INIS)

Bason, Y.; Klein, L.; Yau, J.B.; Hong, X.; Ahn, C.H.

2004-01-01

Thin films of the colossal magnetoresistance material La 1-x Sr x MnO 3 (LSMO) grown on SrTiO 3 substrates exhibit bi-axial magnetocrystalline anisotropy with easy axes along the [110] and [1 anti 1 0] directions. We have recently discovered that the intrinsic biaxial magnetic anisotropy combined with a giant planar Hall effect lead to striking switching behavior in the transverse resistivity of LSMO films (Appl. Phys. Lett. 84, 2593 (2004)). Here we use this phenomenon as a sensitive tool for measuring in-plane magnetization in order to characterize the magnetic anisotropy. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

Exchange bias energy in Co/Pt/IrMn multilayers with perpendicular and in-plane anisotropy

International Nuclear Information System (INIS)

Czapkiewicz, M.; Stobiecki, T.; Rak, R.; Zoladz, M.; Dijken, S. van

2007-01-01

The magnetization reversal process in perpendicularly biased [Pt/Co] 3 /d Pt Pt/IrMn and in-plane biased Co/d Pt Pt/IrMn multilayers with 0nm= Pt = Pt =0.1nm. In both cases, the existence of large exchange bias fields correlates with a high domain density during magnetization reversal. The interface exchange coupling energy is larger for the in-plane biased films than for the perpendicularly biased multilayers

Exchange bias theory

International Nuclear Information System (INIS)

Kiwi, Miguel

2001-01-01

Research on the exchange bias (EB) phenomenon has witnessed a flurry of activity during recent years, which stems from its use in magnetic sensors and as stabilizers in magnetic reading heads. EB was discovered in 1956 but it attracted only limited attention until these applications, closely related to giant magnetoresistance, were developed during the last decade. In this review, I initially give a short introduction, listing the most salient experimental results and what is required from an EB theory. Next, I indicate some of the obstacles in the road towards a satisfactory understanding of the phenomenon. The main body of the text reviews and critically discusses the activity that has flourished, mainly during the last 5 years, in the theoretical front. Finally, an evaluation of the progress made, and a critical assessment as to where we stand nowadays along the road to a satisfactory theory, is presented

Fluoride Thin Films: from Exchange Bias to Multferroicity

Science.gov (United States)

Johnson, Trent A.

This dissertation concerns research into the growth and characterization fluoride thin films by molecular beam epitaxy. After a discussion of relevant background material and experimental procedures in the first two chapters, we study exchange bias in magnetic multilayers incorporating the uniaxial antiferromagnet FeF2, grown to varying thicknesses, sandwiched between ferromagnetic Co layers with fixed thicknesses of 5 and 20 nm. Several bilayers with only the 20 nm thick Co layer were grown for comparative study. The samples were grown on Al2O3 (112¯0) substrates at room temperature. In-situ RHEED and x-ray diffraction indicated the films were polycrystalline. The films were determined to have low surface and interlayer roughness, as determined by AFM and x-ray reflectivity. After field-cooling to below the Neel temperature of FeF2 in a magnetic field of 1 kOe, magnetic hysteresis loops were measured as a function of temperature. We found that both layers had a negative exchange bias, with the exchange bias of the thinner layer larger than that of the thicker layer. In addition, the coercivity below the blocking temperature TB of the thinner layer was significantly larger than that of the thick layer, even though the coercivity of the two layers was the same for T > TB. The exchange bias effect, manifested by a shift in these hysteresis loops, showed a strong dependence on the thickness of the antiferromagnet. Anisotropic magnetoresistance measurements provided additional insight into the magnetization reversal mechanism within the ferromagnets. The thickness dependent exchange anisotropy of trilayer and bilayer samples is explained by adapting a random field model to the antiferromagnet/ferromagnet interface. Finally, We investigate the temperature dependent growth, as well as the magnetic and ferroelectric properties of thin films of the multiferroic compounds BaMF4, where M = Fe, Co, Ni. The films were grown to thicknesses of 50 or 100 nm on single crystal Al2

Exchange bias coupling in NiO/Ni bilayer tubular nanostructures synthetized by electrodeposition and thermal oxidation

Energy Technology Data Exchange (ETDEWEB)

Yu, T., E-mail: work_tian@scu.edu.cn [College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Zhang, Z.W.; Xu, Y.H. [College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Liu, Y. [Analytical & Testing Center, Sichuan University, Chengdu 610064 (China); Li, W.J. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190 (China); Nie, Y.; Zhang, X. [College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Xiang, G., E-mail: gxiang@scu.edu.cn [College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China)

2017-05-01

In this paper, we reported the synthesis of NiO/Ni bilayer nanotubes by electrodeposition and thermal oxidation using anodic aluminum oxide templates. The morphology, structure, chemical composition and magnetic properties, especially magnetic exchange bias induced by subsequent magnetic field cooling, in this one-dimensional antiferromagnetic/ferromagnetic hybrid system were investigated. It was found that the effect of the annealing temperature, which mainly dominated the thickness of the NiO layer, and the annealing time, which mainly dominated the grain size of the NiO, on the exchange bias field showed competitive relationship. The optimized exchange bias field was achieved by the combination of the shorter annealing time and higher annealing temperature. - Highlights: • NiO-Ni bilayer tubular nanotubes were fabricated by electrodeposition and thermal oxidation. • The exchange bias effect in NiO-Ni nanotubes was induced by magnetic field cooling. • The competitive effect of annealing temperature and annealing time on the exchange bias coupling was analyzed.

Effect of anisotropy on anomalous Hall effect in Tb-Fe thin films

International Nuclear Information System (INIS)

Babu, V. Hari; Markandeyulu, G.; Subrahmanyam, A.

2009-01-01

The electrical and Hall resistivities of Tb x Fe 100-x thin films in the temperature range 13-300 K were investigated. The sign of Hall resistivity at 300 K is found to change from positive for x=28 film to negative for x=30 film, in accordance with the compensation of Tb and Fe moments. All the films are seen to have planar magnetic anisotropy at 13 K. The temperature coefficients of electrical resistivities of the amorphous films with 19≤x≤51 are seen to be negative. The temperature dependence of Hall resistivity of these films is explained on the basis of random magnetic anisotropy model. The temperature dependences of Hall resistivities of the x=22 and 41 films are seen to exhibit a nonmonotonous behavior due to change in anisotropy from perpendicular to planar. The same behavior is considered for the explanation regarding the probable formation of Berry phase curvature in these films.

Angular dependence of the exchange bias for the bistable state

Energy Technology Data Exchange (ETDEWEB)

Bai, Yuhao [College of Physics and Electronic Information, Shanxi Normal University, Linfen 041004 (China); Research College of materials science, Shanxi Normal University, Linfen 041004 (China); Xu, Xiaohong, E-mail: xuxh@dns.sxnu.edu.cn [Research College of materials science, Shanxi Normal University, Linfen 041004 (China); Key Laboratory of Magnetic Molecules and Magnetic Information Materials, Ministry of Education, Shanxi Normal University, Linfen 041004 (China)

2017-06-15

The angular dependence of the exchange bias (ADEB) has been investigated in detail when the exchange-coupled ferromagnetic (FM)/antiferromagnetic (AFM) bilayer is in the bistable state. Complete and incomplete jump phenomena were found at the intrinsic easy and hard axes, when they pass through two special positions making the angular deviation of 58.2826° and 121.7174° from the easy axis of the uniaxial anisotropy, respectively. The combination of these different types of the jump phenomena at the intrinsic easy and hard axes yields five distinct types of the ADEB. The physical condition for each type of ADEB is established. Additionally, the extreme value problem of the exchange bias field and coercivity are also discussed, which is an important technological issue in the design of the magnetoresistive and spintronic devices. These results enable us to make a comprehensive understanding of the experimental ADEB curves.

W∞ gauge theory and the quantum Hall effect

International Nuclear Information System (INIS)

Shizuya, K.

1994-05-01

It is shown that a planar system of Hall electrons coupled to an applied electromagnetic field is written in the form of a W ∞ gauge theory. The associated W ∞ gauge field is expressed nonlinearly in terms of an infinite set of multipoles of the electromagnetic field. The W ∞ transformations generate mixing among the Landau levels. They provide a systematic way to classify the electromagnetic characteristics of the Hall system according to the resolution of external probes. In particular, an exact long-wavelength connection is derived between the carrier density and the Hall conductance in the presence of electron-electron interactions. Our approach is complementary to an earlier one and reveals a dual role the W ∞ gauge symmetry plays in the Hall dynamics. (author)

Exploring the microscopic origin of exchange bias with photoelectron emission microscopy (invited)

International Nuclear Information System (INIS)

Scholl, A.; Nolting, F.; Stohr, J.; Regan, T.; Luning, J.; Seo, J. W.; Locquet, J.-P.; Fompeyrine, J.; Anders, S.; Ohldag, H.

2001-01-01

It is well known that magnetic exchange coupling across the ferromagnet - antiferromagnet interface results in an unidirectional magnetic anisotropy of the ferromagnetic layer, called exchange bias. Despite large experimental and theoretical efforts, the origin of exchange bias is still controversial, mainly because detection of the interfacial magnetic structure is difficult. We have applied photoelectron emission microscopy (PEEM) on several ferromagnet - antiferromagnet thin-film structures and microscopically imaged the ferromagnetic and the antiferromagnetic structure with high spatial resolution. Taking advantage of the surface sensitivity and elemental specificity of PEEM, the magnetic configuration and critical properties such as the Neel temperature were determined on LaFeO 3 and NiO thin films and single crystals. On samples coated with a ferromagnetic layer, we microscopically observe exchange coupling across the interface, causing a clear correspondence of the domain structures in the adjacent ferromagnet and antiferromagnet. Field dependent measurements reveal a strong uniaxial anisotropy in individual ferromagnetic domains. A local exchange bias was observed even in not explicitly field-annealed samples, caused by interfacial uncompensated magnetic spins. These experiments provide highly desired information on the relative orientation of electron spins at the interface between ferromagnets and antiferromagnets. [copyright] 2001 American Institute of Physics

Anisotropic magnetoresistance and anomalous Nernst effect in exchange biased permalloy/(1 0 0) NiO single-crystal

Energy Technology Data Exchange (ETDEWEB)

Holanda, J., E-mail: joseholanda@df.ufpe.br; Maior, D.S.; Azevedo, A.; Rezende, S.M.

2017-06-15

Highlights: • We have investigated the anisotropic magnetoresistance (AMR) and the anomalous Nernst effect (ANE) in an exchange-biased bilayer Py/(100) NiO single-Crystal. • The shift of the hysteresis loop, measured with the different techniques, yield approximately the same value of H{sub EB}. • In spite of the measurement techniques be based in different physical phenomena, our results confirm the robustness of the exchange anisotropy at the Py/NiO interface. • The strength of the anomalous Nernst effect for the exchange-biased permalloy film is compared to values measured in non biased films. - Abstract: We have investigated the anisotropic magnetoresistance (AMR) and the anomalous Nernst effect (ANE) in an exchange-biased bilayer consisting of a thin film of permalloy deposited on a single crystal antiferromagnetic NiO (1 0 0). The exchange bias field (H{sub EB}) value was obtained by means of AMR, ANE and magnetization hysteresis measurements. The shift of the hysteresis loop, measured with the three different techniques, yield approximately the same value of H{sub EB.} In spite of the measurement techniques be based in different physical phenomena, our results confirm the robustness of the exchange anisotropy at the Py/NiO interface. The strength of the anomalous Nernst effect for the exchange-biased permalloy film is compared to values measured in non biased films.

Phase separation and exchange bias effect in Ca doped EuCrO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Deng, Dongmei, E-mail: dmdeng@shu.edu.cn [Department of Physics and Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Wang, Xingyu; Zheng, Jiashun; Qian, Xiaolong [Department of Physics and Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Yu, Dehong; Sun, Dehui [Bragg Institute, Australian Nuclear Science and Technology Organization, Kirrawee DC, NSW 2232 (Australia); Jing, Chao [Department of Physics and Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Lu, Bo [Analysis and Measurement Center and Laboratory for Microstructures of Shanghai University, Shanghai 200444 (China); Kang, Baojuan; Cao, Shixun; Zhang, Jincang [Department of Physics and Materials Genome Institute, Shanghai University, Shanghai 200444 (China)

2015-12-01

The rare-earth chromites have attracted increasing interests in recent years, as a member of a few single-phase multiferroic materials. We studied the structure and magnetic property of a series of Ca-doped EuCrO{sub 3} samples by using X-ray powder diffraction and Physical Property Measurement System. Phase separation, rotation of magnetization in M(T) curve and exchange bias effect have been identified. The Eu{sub 0.7}Ca{sub 0.3}CrO{sub 3} polycrystalline sample may be intrinsically phase-separated, with Cr{sup 3+}-rich, Cr{sup 4+}-rich canted antiferromagnetic regions surrounded by spin glass-like frustrated phase, resulting in several magnetic features including: (1) a broad and slow increase of M(T) curve with the decrease of temperature; (2) rotation of magnetization with increasing cooling field; (3) exchange bias and glassy magnetism. The rotation of magnetization is ascribed to the rotation of the moment of Cr{sup 4+}-rich regions, arising from the competition between exchange coupling energy and magnetostatic energy. The exchange bias effect suggests the formation of weak ferromagnetic unidirectional anisotropy during field cooling, due to the exchange coupling among weak ferromagnetic domains and surrounding spin glass-like regions. This result helps understanding the interaction among different magnetic domains and phases in a complex system. - Highlights: • Exchange bias effect and glassy magnetism were observed in Eu{sub 0.7}Ca{sub 0.3}CrO{sub 3}. • Rotation of the moments of Cr{sup 4+}-rich regions result in the rotation of magnetization in M(T) curve. • Spin glass-like regions contribute to the observed exchange bias effect.

Exchange bias in diluted-antiferromagnet/antiferromagnet bilayers

International Nuclear Information System (INIS)

Mao, Zhongquan; Zhan, Xiaozhi; Chen, Xi

2015-01-01

The hysteresis-loop properties of a diluted-antiferromagnetic (DAF) layer exchange coupling to an antiferromagnetic (AF) layer are investigated by means of numerical simulations. Remarkable loop shift and coercivity enhancement are observed in such DAF/AF bilayers, while they are absent in the uncoupled DAF single layer. The influences of pinned domains, dilution, cooling field and DAF layer thickness on the loop shift are investigated systematically. The result unambiguously confirms an exchange bias (EB) effect in the DAF/AF bilayers. It also reveals that the EB effect originates from the pinned AF domains within the DAF layer. In contrast to conventional EB systems, frozen uncompensated spins are not found at the interface of the AF pinning layer. (paper)

Domain-size-dependent exchange bias in Co/LaFeO3

Energy Technology Data Exchange (ETDEWEB)

Scholl, A.; Nolting, F.; Seo, J.W.; Ohldag, H.; Stohr, J.; Raoux,S.; Locquet, J.-P.; Fompeyrine, J.

2004-09-22

X-ray microscopy using magnetic linear dichroism of a zero-field-grown, multi-domain Co/LaFeO{sub 3} ferromagnet/antiferromagnet sample shows a local exchange bias of random direction and magnitude. A statistical analysis of the local bias of individual, micron-size magnetic domains demonstrates an increasing bias field with decreasing domain size as expected for a random distribution of pinned, uncompensated spins, which are believed to mediate the interface coupling. A linear dependence with the inverse domain diameter is found.

Planar Hall effect bridge sensors with NiFe/Cu/IrMn stack optimized for self-field magnetic bead detection

DEFF Research Database (Denmark)

Henriksen, Anders Dahl; Rizzi, Giovanni; Hansen, Mikkel Fougt

2016-01-01

, and 30 nm, and 0 ≤ tCu ≤ 0.6 nm. The sensors were characterized by magnetic hysteresis measurements, by measurements of the sensor response vs. applied field, and by measurements of the sensor response to a suspension of magnetic beads magnetized by the sensor self-field due to the sensor bias current....... The exchange bias field was found to decay exponentially with tCu and inversely with tFM. The reduced exchange field for larger values of tFM and tCu resulted in higher sensitivities to both magnetic fields and magnetic beads. We argue that the maximum magnetic bead signal is limited by Joule heating...

Ultra-low-pressure sputtering to improve exchange bias and tune linear ranges in spin valves

Energy Technology Data Exchange (ETDEWEB)

Tang, XiaoLi, E-mail: tangtang1227@163.com; Yu, You; Liu, Ru; Su, Hua; Zhang, HuaiWu; Zhong, ZhiYong; Jing, YuLan

2017-05-01

A series of CoFe/IrMn exchange bilayers was grown by DC-sputtering at different ultra-low argon pressures ranging from 0.008 to 0.1 Pa. This pressure range was one to two orders lower than the normal sputtering pressure. Results revealed that the exchange bias increased from 140 to 250 Oe in CoFe(10 nm)/IrMn (15 nm) bilayers of fixed thickness because of the improved crystalline structure and morphological uniformity of films. Since ferromagnetic /antiferromagnetic (FM/AF) bilayers are always used in linear magnetic sensors as detection layers, the varying exchange bias can successfully achieve tunable linear range in a crossed pinning spin valve. The linear range could be adjustable from −80 Oe – +80 Oe to −150 Oe – +150 Oe on the basis of giant magnetoresistance responses. Therefore, this method provides a simple method to tune the operating range of magnetic field sensors. - Highlights: • Increasing exchange bias was achieved in bilayer at ultra-low-pressure sputtering. • The low void density and smooth surface were achieved in low pressure. • Varying exchange bias achieved tunable linear range in spin valve.

Frequency and temperature dependence of ferromagnetic linewidth in exchange biased Permalloy

International Nuclear Information System (INIS)

Lubitz, P.; Rubinstein, M.; Krebs, J. J.; Cheng, S.-F.

2001-01-01

Ferromagnetic resonance linewidths were measured at 9.5 and 35 GHz and in the temperature range from 77 to 350 K for thin Permalloy (Py) films exchange biased by adjacent layers of NiO, CoO, or IrMn. Compared to unoxidized Py alone, for which the linewidth is nearly temperature independent in this range and scales linearly with frequency, exchange biased Py has broader lines with distinctive temperature dependences for each bias material at 9.5 GHz. Different temperature dependences were observed at 35 GHz. Our results are consistent with relaxation related to thermally driven reversal of the antiferromagnetic grains. Intrinsic damping and inhomogeneities also add to the widths. The qualitative features of the temperature and frequency dependences of the linewidths can be described with the usual expression for the slow relaxation linewidth mechanism. The temperature dependence of the relaxation time is taken from Neel's expression for the reversal time using appropriate rate prefactors and activation energies. [copyright] 2001 American Institute of Physics

Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films

Energy Technology Data Exchange (ETDEWEB)

Li, Xiaopu, E-mail: xl6ba@virginia.edu; Ma, Chung T.; Poon, S. Joseph, E-mail: sjp9x@virginia.edu [Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States); Lu, Jiwei [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Devaraj, Arun [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States); Spurgeon, Steven R.; Comes, Ryan B. [Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)

2016-01-04

Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy. Atom probe tomography, scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switching using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.

Memory effect versus exchange bias for maghemite nanoparticles

Science.gov (United States)

Nadeem, K.; Krenn, H.; Szabó, D. V.

2015-11-01

We studied the temperature dependence of memory and exchange bias effects and their dependence on each other in maghemite (γ-Fe2O3) nanoparticles by using magnetization studies. Memory effect in zero field cooled process in nanoparticles is a fingerprint of spin-glass behavior which can be due to i) surface disordered spins (surface spin-glass) and/or ii) randomly frozen and interacting nanoparticles core spins (super spin-glass). Temperature region (25-70 K) for measurements has been chosen just below the average blocking temperature (TB=75 K) of the nanoparticles. Memory effect (ME) shows a non-monotonous behavior with temperature. It shows a decreasing trend with decreasing temperature and nearly vanishes below 30 K. However it also decreased again near the blocking temperature of the nanoparticles e.g., 70 K. Exchange bias (EB) in these nanoparticles arises due to core/shell interface interactions. The EB increases sharply below 30 K due to increase in core/shell interactions, while ME starts vanishing below 30 K. We conclude that the core/shell interface interactions or EB have not enhanced the ME but may reduce it in these nanoparticles.

Exchange biased Co3O4 nanowires: A new insight into its magnetic core-shell nature

Science.gov (United States)

Thomas, S.; Jose, A.; Thanveer, T.; Anantharaman, M. R.

2017-06-01

We investigated interfacial exchange coupling effect in nano casted Co3O4 nanowires. Magnetometry measurements indicated that the magnetic response of the wires has two contributions. First one from the core of the wire which has characteristics of a 2D-DAFF(two-dimensional diluted antiferromagnet in a field). The second one is from uncompensated surface spins which get magnetically ordered towards the field direction once field cooled below 25 K. Below 25 K, the net magnetization of the core of the wire gets exchange coupled with the uncompensated surface spins giving rise to exchange bias effect. The unique 2D-DAFF/spin-glass core/shell heterostructure showed a pronounced training effect in the first field cycling itself. The magnitude of exchange bias field showed a maximum at intermediate cooling fields and for the higher cooling field, exchange bias got reduced.

Exchange Bias Optimization by Controlled Oxidation of Cobalt Nanoparticle Films Prepared by Sputter Gas Aggregation

Directory of Open Access Journals (Sweden)

Ricardo López Antón

2017-03-01

Full Text Available Porous films of cobalt nanoparticles have been obtained by sputter gas aggregation and controllably oxidized by air annealing at 100 °C for progressively longer times (up to more than 1400 h. The magnetic properties of the samples were monitored during the process, with a focus on the exchange bias field. Air annealing proves to be a convenient way to control the Co/CoO ratio in the samples, allowing the optimization of the exchange bias field to a value above 6 kOe at 5 K. The occurrence of the maximum in the exchange bias field is understood in terms of the density of CoO uncompensated spins and their degree of pinning, with the former reducing and the latter increasing upon the growth of a progressively thicker CoO shell. Vertical shifts exhibited in the magnetization loops are found to correlate qualitatively with the peak in the exchange bias field, while an increase in vertical shift observed for longer oxidation times may be explained by a growing fraction of almost completely oxidized particles. The presence of a hummingbird-like form in magnetization loops can be understood in terms of a combination of hard (biased and soft (unbiased components; however, the precise origin of the soft phase is as yet unresolved.

Giant exchange bias and its angular dependence in Co/CoO core-shell nanowire assemblies

Energy Technology Data Exchange (ETDEWEB)

Gandha, Kinjal; Chaudhary, Rakesh P.; Mohapatra, Jeotikanta; Koymen, Ali R.; Liu, J. Ping, E-mail: pliu@uta.edu

2017-07-12

The exchange-bias field (H{sub EB}) and its angular dependence are systematically investigated in Co/CoO core-shell nanowire assemblies (∼15 nm in diameter and ∼200 nm in length) consisting of single-crystalline Co core and polycrystalline CoO shell. Giant exchange-bias field (H{sub EB}) up to 2.4 kOe is observed below a blocking temperature (T{sub EB} ∼150 K) in the aligned Co/CoO nanowire assemblies. It is also found that there is an angular dependence between the H{sub EB} and the applied magnetization direction. The H{sub EB} showed a peak at 30° between the applied field and the nanowire aligned direction, which may be attributed to the noncollinear spin orientations at the interface between the ferromagnetic core and the antiferromagnetic shell. This behavior is quantitatively supported by an analytical calculation based on Stoner–Wohlfarth model. This study underlines the importance of the competing magnetic anisotropies at the interface of Co/CoO core-shell nanowires. - Highlights: • Giant exchange bias is observed in oriented Co/CoO core-shell nanowire assemblies. • Study of angular and temperature dependence of the exchange bias effect. • Competing magnetic anisotropies at the interface of Co/CoO core-shell nanowires. • Effect of misaligned spins in FM/AFM interface on angular dependence of exchange bias. • We explain the analytical model that accounts for experimental results.

Giant exchange bias and its angular dependence in Co/CoO core-shell nanowire assemblies

International Nuclear Information System (INIS)

Gandha, Kinjal; Chaudhary, Rakesh P.; Mohapatra, Jeotikanta; Koymen, Ali R.; Liu, J. Ping

2017-01-01

The exchange-bias field (H EB ) and its angular dependence are systematically investigated in Co/CoO core-shell nanowire assemblies (∼15 nm in diameter and ∼200 nm in length) consisting of single-crystalline Co core and polycrystalline CoO shell. Giant exchange-bias field (H EB ) up to 2.4 kOe is observed below a blocking temperature (T EB ∼150 K) in the aligned Co/CoO nanowire assemblies. It is also found that there is an angular dependence between the H EB and the applied magnetization direction. The H EB showed a peak at 30° between the applied field and the nanowire aligned direction, which may be attributed to the noncollinear spin orientations at the interface between the ferromagnetic core and the antiferromagnetic shell. This behavior is quantitatively supported by an analytical calculation based on Stoner–Wohlfarth model. This study underlines the importance of the competing magnetic anisotropies at the interface of Co/CoO core-shell nanowires. - Highlights: • Giant exchange bias is observed in oriented Co/CoO core-shell nanowire assemblies. • Study of angular and temperature dependence of the exchange bias effect. • Competing magnetic anisotropies at the interface of Co/CoO core-shell nanowires. • Effect of misaligned spins in FM/AFM interface on angular dependence of exchange bias. • We explain the analytical model that accounts for experimental results.

Spin-Hall nano-oscillator: A micromagnetic study

Energy Technology Data Exchange (ETDEWEB)

Giordano, A.; Azzerboni, B.; Finocchio, G. [Department of Electronic Engineering, Industrial Chemistry and Engineering, University of Messina, C.da di Dio, I-98166 Messina (Italy); Carpentieri, M. [Department of Electrical and Information Engineering, Politecnico of Bari, via E. Orabona 4, I-70125 Bari (Italy); Laudani, A. [Department of Engineering, University of Roma Tre, via V. Volterra 62, I-00146 Roma (Italy); Gubbiotti, G. [Istituto Officina dei Materiali del CNR (CNR-IOM), Unità di Perugia c/o Dipartimento di Fisica e Geologia, Via A. Pascoli, 06123 Perugia (Italy)

2014-07-28

This Letter studies the dynamical behavior of spin-Hall nanoscillators from a micromagnetic point of view. The model parameters have been identified by reproducing recent experimental data quantitatively. Our results indicate that a strongly localized mode is observed for in-plane bias fields such as in the experiments, while predict the excitation of an asymmetric propagating mode for large enough out-of plane bias field similarly to what observed in spin-torque nanocontact oscillators. Our findings show that spin-Hall nanoscillators can find application as spin-wave emitters for magnonic applications where spin waves are used for transmission and processing information on nanoscale.

Tunneling Anomalous and Spin Hall Effects.

Science.gov (United States)

Matos-Abiague, A; Fabian, J

2015-07-31

We predict, theoretically, the existence of the anomalous Hall effect when a tunneling current flows through a tunnel junction in which only one of the electrodes is magnetic. The interfacial spin-orbit coupling present in the barrier region induces a spin-dependent momentum filtering in the directions perpendicular to the tunneling current, resulting in a skew tunneling even in the absence of impurities. This produces an anomalous Hall conductance and spin Hall currents in the nonmagnetic electrode when a bias voltage is applied across the tunneling heterojunction. If the barrier is composed of a noncentrosymmetric material, the anomalous Hall conductance and spin Hall currents become anisotropic with respect to both the magnetization and crystallographic directions, allowing us to separate this interfacial phenomenon from the bulk anomalous and spin Hall contributions. The proposed effect should be useful for proving and quantifying the interfacial spin-orbit fields in metallic and metal-semiconductor systems.

Bridging exchange bias effect in NiO and Ni(core)@NiO(shell) nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Rinaldi-Montes, Natalia, E-mail: nataliarin@gmail.com [Departamento de Física, Universidad de Oviedo, E-33007 Oviedo (Spain); Gorria, Pedro [Departamento de Física & IUTA, EPI, Universidad de Oviedo, E-33203 Gijón (Spain); Martínez-Blanco, David [Servicios Científico-Técnicos, Universidad de Oviedo, E-33006 Oviedo (Spain); Fuertes, Antonio B. [Instituto Nacional del Carbón, CSIC, E-33080 Oviedo (Spain); Fernández Barquín, Luis [CITIMAC, Facultad de Ciencias, Universidad de Cantabria, E-39005 Santander (Spain); Puente-Orench, Inés [Instituto de Ciencia de Materiales de Aragón, CSIC-Universidad de Zaragoza and Institut Laue-Langevin, BP 156, F-38042 Grenoble Cedex 9 (France); Blanco, Jesús A. [Departamento de Física, Universidad de Oviedo, E-33007 Oviedo (Spain)

2016-02-15

Among all bi-magnetic core(transition metal)@shell(transition metal oxide) nanoparticles (NPs), Ni@NiO ones show an onset temperature for the exchange bias (EB) effect far below the Néel temperature of bulk antiferromagnetic NiO. In this framework, the role played by the magnetism of NiO at the nanoscale is investigated by comparing the microstructure and magnetic properties of NiO and Ni@NiO NPs. With the aim of bridging the two systems, the diameter of the NiO NPs (~4 nm) is chosen to be comparable to the shell thickness of Ni@NiO ones (~2 nm). The EB effect in Ni@NiO NPs is attributed to the exchange coupling between the core and the shell, with an interfacial exchange energy of ΔE~0.06 erg cm{sup −2}, thus comparable to previous reports on Ni/NiO interfaces both in thin film and NP morphologies. In contrast, the EB detected in NiO NPs is explained in a picture where uncompensated spins located on a magnetically disordered surface shell are exchange coupled to the antiferromagnetic core. In all the studied NPs, the variation of the EB field as a function of temperature is described according to a negative exponential law with a similar decay constant, yielding a vanishing EB effect around T~40–50 K. In addition, the onset temperature for the EB effect in both NiO and Ni@NiO NPs seems to follow a universal dependence with the NiO crystallite size. - Highlights: • Comparison of the exchange bias effect in NiO and Ni(core)@NiO(shell) nanoparticles. • Universal temperature dependence of the exchange bias effect. • Suggested similar physical origin of the effect in both systems. • Size and crystallinity of the NiO shell hold the key for exchange bias properties.

Tuning antiferromagnetic exchange interaction for spontaneous exchange bias in MnNiSnSi system

Science.gov (United States)

Jia, Liyun; Shen, Jianlei; Li, Mengmeng; Wang, Xi; Ma, Li; Zhen, Congmian; Hou, Denglu; Liu, Enke; Wang, Wenhong; Wu, Guangheng

2017-12-01

Based on almost all the data from the literature on spontaneous exchange bias (SEB), it is expected that the system will show SEB if it meets two conditions simultaneously: (i) there are the coexistence and competition of antiferromagnetic (AFM) and ferromagnetic (FM) interactions and (ii) AFM interaction should dominate but not be too strong in this competition. In order to verify this view, a systematic study on SEB has been performed in this work. Mn50Ni40Sn10 with strong FM interaction and without SEB is chosen as the mother composition, and the negative chemical pressure is introduced by the substitution of Sn by Si to enhance AFM interaction. It is found that a long-range FM ordering window is closed, and a long-range AFM ordering window is opened. As a result, SEB is triggered and a continuous tuning of the spontaneous exchange bias field (HSEB) from 0 Oe to 1300 Oe has been realized in a Mn50Ni40Sn10-xSix system by the enhanced AFM interaction.

Nanoscale Control of Exchange Bias with BiFeO3 Thin Films

NARCIS (Netherlands)

Martin, Lane W.; Chu, Ying-Hao; Holcomb, Mikel B.; Huijben, Mark; Yu, Pu; Han, Shu-Jen; Lee, Donkoun; Wang, Shan X.; Ramesh, R.

2008-01-01

We demonstrate a direct correlation between the domain structure of multiferroic BiFeO3 thin films and exchange bias of Co0.9Fe0.1/BiFeO3 heterostructures. Two distinct types of interactions − an enhancement of the coercive field (exchange enhancement) and an enhancement of the coercive field

Novel Hall sensors developed for magnetic field imaging systems

International Nuclear Information System (INIS)

Cambel, Vladimir; Karapetrov, Goran; Novosad, Valentyn; Bartolome, Elena; Gregusova, Dagmar; Fedor, Jan; Kudela, Robert; Soltys, Jan

2007-01-01

We report here on the fabrication and application of novel planar Hall sensors based on shallow InGaP/AlGaAs/GaAs heterostructure with a two-dimensional electron gas (2DEG) as an active layer. The sensors are developed for two kinds of experiments. In the first one, magnetic samples are placed directly on the Hall sensor. Room temperature experiments of permalloy objects evaporated onto the sensor are presented. In the second experiment, the sensor scans close over a multigranular superconducting sample prepared on a YBCO thin film. Large-area and high-resolution scanning experiments were performed at 4.2 K with the Hall probe scanning system in a liquid helium flow cryostat

Tuning the stability and the skyrmion Hall effect in magnetic skyrmions by adjusting their exchange strengths with magnetic disks

Science.gov (United States)

Sun, L.; Wu, H. Z.; Miao, B. F.; Wu, D.; Ding, H. F.

2018-06-01

Magnetic skyrmion is a promising candidate for the future information technology due to its small size, topological protection and the ultralow current density needed to displace it. The applications, however, are currently limited by its narrow phase diagram and the skyrmion Hall effect which prevents the skyrmion motion at high speed. In this work, we study the Dzyaloshinskii-Moriya interaction induced magnetic skyrmion that exchange coupled with magnetic nano-disks utilizing the micromagnetic simulation. We find that the stability and the skyrmion Hall effect of the created skyrmion can be tuned effectively with the coupling strength, thus opens the space to optimize the performance of the skyrmion based devices.

Exchange bias of Ni nanoparticles embedded in an antiferromagnetic IrMn matrix

International Nuclear Information System (INIS)

Kuerbanjiang, Balati; Herr, Ulrich; Wiedwald, Ulf; Haering, Felix; Ziemann, Paul; Biskupek, Johannes; Kaiser, Ute

2013-01-01

The magnetic properties of Ni nanoparticles (Ni-NPs) embedded in an antiferromagnetic IrMn matrix were investigated. The Ni-NPs of 8.4 nm mean diameter were synthesized by inert gas aggregation. In a second processing step, the Ni-NPs were in situ embedded in IrMn films or SiO x films under ultrahigh vacuum (UHV) conditions. Findings showed that Ni-NPs embedded in IrMn have an exchange bias field H EB = 821 Oe at 10 K, and 50 Oe at 300 K. The extracted value of the exchange energy density is 0.06 mJ m −2 at 10 K, which is in good accordance with the results from multilayered thin film systems. The Ni-NPs embedded in SiO x did not show exchange bias. As expected for this particle size, they are superparamagnetic at T = 300 K. A direct comparison of the Ni-NPs embedded in IrMn or SiO x reveals an increase of the blocking temperature from 210 K to around 400 K. The coercivity of the Ni-NPs exchange coupled to the IrMn matrix at 10 K is 8 times larger than the value for Ni-NPs embedded in SiO x . We studied time-dependent remanent magnetization at different temperatures. The relaxation behavior is described by a magnetic viscosity model which reflects a rather flat distribution of energy barriers. Furthermore, we investigated the effects of different field cooling processes on the magnetic properties of the embedded Ni-NPs. Exchange bias values fit to model calculations which correlate the contribution of the antiferromagnetic IrMn matrix to its grain size. (paper)

Manipulation of Superparamagnetic Beads on Patterned Exchange-Bias Layer Systems for Biosensing Applications

Directory of Open Access Journals (Sweden)

Arno Ehresmann

2015-11-01

Full Text Available A technology platform based on a remotely controlled and stepwise transport of an array arrangement of superparamagnetic beads (SPB for efficient molecular uptake, delivery and accumulation in the context of highly specific and sensitive analyte molecule detection for the application in lab-on-a-chip devices is presented. The near-surface transport of SPBs is realized via the dynamic transformation of the SPBs’ magnetic potential energy landscape above a magnetically stripe patterned Exchange-Bias (EB thin film layer systems due to the application of sub-mT external magnetic field pulses. In this concept, the SPB velocity is dramatically influenced by the magnitude and gradient of the magnetic field landscape (MFL above the magnetically stripe patterned EB substrate, the SPB to substrate distance, the magnetic properties of both the SPBs and the EB layer system, respectively, as well as by the properties of the external magnetic field pulses and the surrounding fluid. The focus of this review is laid on the specific MFL design in EB layer systems via light-ion bombardment induced magnetic patterning (IBMP. A numerical approach is introduced for the theoretical description of the MFL in comparison to experimental characterization via scanning Hall probe microscopy. The SPB transport mechanism will be outlined in terms of the dynamic interplay between the EB substrate’s MFL and the pulse scheme of the external magnetic field.

Manipulation of Superparamagnetic Beads on Patterned Exchange-Bias Layer Systems for Biosensing Applications.

Science.gov (United States)

Ehresmann, Arno; Koch, Iris; Holzinger, Dennis

2015-11-13

A technology platform based on a remotely controlled and stepwise transport of an array arrangement of superparamagnetic beads (SPB) for efficient molecular uptake, delivery and accumulation in the context of highly specific and sensitive analyte molecule detection for the application in lab-on-a-chip devices is presented. The near-surface transport of SPBs is realized via the dynamic transformation of the SPBs' magnetic potential energy landscape above a magnetically stripe patterned Exchange-Bias (EB) thin film layer systems due to the application of sub-mT external magnetic field pulses. In this concept, the SPB velocity is dramatically influenced by the magnitude and gradient of the magnetic field landscape (MFL) above the magnetically stripe patterned EB substrate, the SPB to substrate distance, the magnetic properties of both the SPBs and the EB layer system, respectively, as well as by the properties of the external magnetic field pulses and the surrounding fluid. The focus of this review is laid on the specific MFL design in EB layer systems via light-ion bombardment induced magnetic patterning (IBMP). A numerical approach is introduced for the theoretical description of the MFL in comparison to experimental characterization via scanning Hall probe microscopy. The SPB transport mechanism will be outlined in terms of the dynamic interplay between the EB substrate's MFL and the pulse scheme of the external magnetic field.

Nondestructive hall coefficient measurements using ACPD techniques

Science.gov (United States)

Velicheti, Dheeraj; Nagy, Peter B.; Hassan, Waled

2018-04-01

Hall coefficient measurements offer great opportunities as well as major challenges for nondestructive materials characterization. The Hall effect is produced by the magnetic Lorentz force acting on moving charge carriers in the presence of an applied magnetic field. The magnetic perturbation gives rise to a Hall current that is normal to the conduction current but does not directly perturb the electric potential distribution. Therefore, Hall coefficient measurements usually exploit the so-called transverse galvanomagnetic potential drop effect that arises when the Hall current is intercepted by the boundaries of the specimen and thereby produce a measurable potential drop. In contrast, no Hall potential is produced in a large plate in the presence of a uniform normal field at quasi-static low frequencies. In other words, conventional Hall coefficient measurements are inherently destructive since they require cutting the material under tests. This study investigated the feasibility of using alternating current potential drop (ACPD) techniques for nondestructive Hall coefficient measurements in plates. Specifically, the directional four-point square-electrode configuration is investigated with superimposed external magnetic field. Two methods are suggested to make Hall coefficient measurements in large plates without destructive machining. At low frequencies, constraining the bias magnetic field can replace constraining the dimensions of the specimen, which is inherently destructive. For example, when a cylindrical permanent magnet is used to provide the bias magnetic field, the peak Hall voltage is produced when the diameter of the magnet is equal to the diagonal of the square ACPD probe. Although this method is less effective than cutting the specimen to a finite size, the loss of sensitivity is less than one order of magnitude even at very low frequencies. In contrast, at sufficiently high inspection frequencies the magnetic field of the Hall current induces a

Reversal of exchange bias in nanocrystalline antiferromagnetic-ferromagnetic bilayers

International Nuclear Information System (INIS)

Prados, C; Pina, E; Hernando, A; Montone, A

2002-01-01

The sign of the exchange bias in field cooled nanocrystalline antiferromagnetic-ferromagnetic bilayers (Co-O and Ni-O/permalloy) is reversed at temperatures approaching the antiferromagnetic (AFM) blocking temperature. A similar phenomenon is observed after magnetic training processes at similar temperatures. These effects can be explained assuming that the boundaries of nanocrystalline grains in AFM layers exhibit lower transition temperatures than grain cores

Exchange bias effect in composites of cuo nanoparticles and nanosilica glass

Energy Technology Data Exchange (ETDEWEB)

Ranjan Saha, Dhriti [MLS Professor' s Unit, Indian Association for the Cultivation of Science, 2A and 2B Raja S.C. Mullick Road, Jadavpur, Kolkata 700032 (India); Kumar Nandi, Arun [Polymer Science Unit, Indian Association for the Cultivation of Science, 2A and 2B Raja S.C. Mullick Road, Jadavpur, Kolkata 700032 (India); Chakravorty, Dipankar, E-mail: mlsdc@iacs.res.in [MLS Professor' s Unit, Indian Association for the Cultivation of Science, 2A and 2B Raja S.C. Mullick Road, Jadavpur, Kolkata 700032 (India)

2014-04-15

Nanodimensional silica based glass containing iron ions was prepared within the compressed pellet of CuO nanoparicles. The nanocomposite material showed exchange bias effect. This effect arose due to ferromagnetic iron doped CuO phase and antiferromagnetic CuO interface formation within the nanocomposite during the synthesis process. Coercive field as a function of temperature was fitted with Arhenius–Neel equation and extracted blocking temperature was 511 K. The value of effective anisotropy constant for the nanocomposite was found to be 3.64x10{sup 5} erg/cc. - Highlights: • Nanoglass comprising SiO{sub 2} and Fe{sub 2}O{sub 3} was grown with pores of CuO nanoparticle compacts. • CuO (AFM)-core and Fe doped CuO (FM) shell were formed during synthesis. • The nanocomposite material showed exchange bias effect.

ε-iron nitrides: Intrinsic anomalous Hall ferromagnets

Directory of Open Access Journals (Sweden)

Guo-Ke Li

2015-02-01

Full Text Available The anomalous Hall effect in ε-iron nitrides (ε-Fe3-xN, 0 ≤ x ≤ 1 has been systematically investigated taking advantage of the fact that the exchange splitting of ε-Fe3-xN can be continuously tuned through the nitrogen concentration. It has been found that the anomalous Hall conductivity, σ x y A H , is proportional to the saturation magnetization MS, i.e., σ x y A H = S H M S , across significant variations in the saturation magnetization (96–1146 emu/cc. This relationship is in excellent agreement with the intrinsic mechanism as well as with the unified theory of AHE. Our results also demonstrate that the anomalous Hall conductivity is sensitive to the exchange splitting of the band structure.

Exchange biased Co{sub 3}O{sub 4} nanowires: A new insight into its magnetic core–shell nature

Energy Technology Data Exchange (ETDEWEB)

Thomas, S., E-mail: senoythomas@gmail.com [Materials Science and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology, Thiruvananthapuram 695019 (India); Jose, A.; Thanveer, T. [Materials Science and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology, Thiruvananthapuram 695019 (India); Anantharaman, M.R. [Department of Physics, Cochin University of Science and Technology, Cochin 682022 (India)

2017-06-15

Highlights: • Co{sub 3}O{sub 4} nanowires were synthesised within the channels of mesoporous silica, SBA 15. • Magnetometry measurements indicated a magnetic core-shell structure for Co{sub 3}O{sub 4} nanowires. • The core has characteristics of a 2D-DAFF and uncompensated surface spins constitutes the shell. • Exchange coupling between the core-shell magnetic phases results in exchange bias effect. - Abstract: We investigated interfacial exchange coupling effect in nano casted Co{sub 3}O{sub 4} nanowires. Magnetometry measurements indicated that the magnetic response of the wires has two contributions. First one from the core of the wire which has characteristics of a 2D-DAFF(two-dimensional diluted antiferromagnet in a field). The second one is from uncompensated surface spins which get magnetically ordered towards the field direction once field cooled below 25 K. Below 25 K, the net magnetization of the core of the wire gets exchange coupled with the uncompensated surface spins giving rise to exchange bias effect. The unique 2D-DAFF/spin-glass core/shell heterostructure showed a pronounced training effect in the first field cycling itself. The magnitude of exchange bias field showed a maximum at intermediate cooling fields and for the higher cooling field, exchange bias got reduced.

Experimental evidence of spin glass and exchange bias behavior in sputtered grown α-MnO{sub 2} nanorods

Energy Technology Data Exchange (ETDEWEB)

Kumar, Ashwani; Sanger, Amit; Singh, Amit Kumar; Kumar, Arvind [Nanoscience Laboratory, Institute Instrumentation Centre, Indian Institute of Technology Roorkee, Roorkee 247667 (India); Kumar, Mohit [Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 76100 (Israel); Chandra, Ramesh [Nanoscience Laboratory, Institute Instrumentation Centre, Indian Institute of Technology Roorkee, Roorkee 247667 (India)

2017-07-01

Highlights: • We have synthesized the α-MnO{sub 2} nanorods by using DC reactive sputtering. • We observed Spin glass and exchange bias behavior at low temperature in sputtered grown α-MnO{sub 2} nanorods. • Exchange bias arises due to exchange coupling of uncompensated FM spins and AFM spins at FM/AFM interface. - Abstract: Here, we present a single-step process to synthesize the α-MnO{sub 2} nanorods forest using reactive DC magnetron sputtering for the application of magnetic memories. The structural and morphological properties of the α-MnO{sub 2} nanorods were systematically studied using numerous analytical techniques, including X-ray diffraction, Raman spectroscopy, field-emission scanning electron microscopy and transmission electron microscopy. The magnetic measurements suggest that the α-MnO{sub 2} nanorods exhibit spin glass and exchange bias behaviour at low temperature. Such low temperature behaviour is explained by the core-shell type structure of nanorods. Antiferromagnetic core and shell of uncompensated ferromagnetic spins leads to the formation of antiferromagnetic/ferromagnetic (AFM/FM) interfaces, which originates exchange bias in the sample.

Temperature dependence of exchange bias in (NiFe/IrMn)n multilayer films studied through static and dynamic techniques

Science.gov (United States)

Adams, Daniel J.; Khanal, Shankar; Khan, Mohammad Asif; Maksymov, Artur; Spinu, Leonard

2018-05-01

The in-plane temperature dependence of exchange bias was studied through both dc magnetometry and ferromagnetic resonance spectroscopy in a series of [NiFe/IrMn]n multilayer films, where n is the number of layer repetitions. Major hysteresis loops were recorded in the temperature range of 300 K to 2 K to reveal the effect of temperature on the exchange bias in the static regime while temperature-dependent continuous-wave ferromagnetic resonance for frequencies from 3 to 16 GHz was used to determine the exchange bias dynamically. Strong divergence between the values of exchange bias determined using the two different types of measurements as well as a peak in temperature dependence of the resonance linewidth were observed. These results are explained in terms of the slow-relaxer mechanism.

Exchange bias and perpendicular anisotropy study of ultrathin Pt-Co-Pt-IrMn multilayers sputtered on float glass

Science.gov (United States)

Laval, M.; Lüders, U.; Bobo, J. F.

2007-09-01

We have prepared ultrathin Pt-Co-Pt-IrMn polycrystalline multilayers on float-glass substrates by DC magnetron sputtering. We have determined the optimal set of thickness for both Pt layers, the Co layer and the IrMn biasing layer so that these samples exhibit at the same time out-of-plane magnetic anisotropy and exchange bias. Kerr microscopy domain structure imaging evidences an increase of nucleation rate accompanied with inhomogeneous magnetic behavior in the case of exchange-biased films compared to Pt-Co-Pt trilayers. Polar hysteresis loops are measured in obliquely applied magnetic field conditions, allowing us to determine both perpendicular anisotropy effective constant Keff and exchange-bias coupling JE, which are significantly different from the ones determined by standard switching field measurements.

Exchange bias and perpendicular anisotropy study of ultrathin Pt-Co-Pt-IrMn multilayers sputtered on float glass

International Nuclear Information System (INIS)

Laval, M.; Lueders, U.; Bobo, J.F.

2007-01-01

We have prepared ultrathin Pt-Co-Pt-IrMn polycrystalline multilayers on float-glass substrates by DC magnetron sputtering. We have determined the optimal set of thickness for both Pt layers, the Co layer and the IrMn biasing layer so that these samples exhibit at the same time out-of-plane magnetic anisotropy and exchange bias. Kerr microscopy domain structure imaging evidences an increase of nucleation rate accompanied with inhomogeneous magnetic behavior in the case of exchange-biased films compared to Pt-Co-Pt trilayers. Polar hysteresis loops are measured in obliquely applied magnetic field conditions, allowing us to determine both perpendicular anisotropy effective constant K eff and exchange-bias coupling J E , which are significantly different from the ones determined by standard switching field measurements

Large exchange bias induced by polycrystalline Mn3Ga antiferromagnetic films with controlled layer thickness

Science.gov (United States)

Wu, Haokaifeng; Sudoh, Iori; Xu, Ruihan; Si, Wenshuo; Vaz, C. A. F.; Kim, Jun-young; Vallejo-Fernandez, Gonzalo; Hirohata, Atsufumi

2018-05-01

Polycrystalline Mn3Ga layers with thickness in the range from 6–20 nm were deposited at room temperature by a high target utilisation sputtering. To investigate the onset of exchange-bias, a ferromagnetic Co0.6Fe0.4 layer (3.3–9 nm thick) capped with 5 nm Ta, were subsequently deposited. X-ray diffraction measurements confirm the presence of Mn3Ga (0 0 0 2) and (0 0 0 4) peaks characteristic of the D019 antiferromagnetic structure. The 6 nm thick Mn3Ga film shows the largest exchange bias of 430 Oe at 120 K with a blocking temperature of 225 K. The blocking temperature is found to decrease with increasing Mn3Ga thickness. These results in combination with x-ray reflectivity measurements confirm that the quality of the Mn3Ga/Co0.6Fe0.4 interface controls the exchange bias, with the sharp interface with the 6-nm-thick Mn3Ga inducing the largest exchange bias. The magneto-crystalline anisotropy for 6 nm thick Mn3Ga thin film sample is calculated to be . Such a binary antiferromagnetic Heusler alloy is compatible with the current memory fabrication process and hence has a great potential for antiferromagnetic spintronics.

The Monty Hall Dilemma.

Science.gov (United States)

Granberg, Donald; Brown, Thad A.

1995-01-01

Examines people's behavior in the Monty Hall Dilemma (MHD), in which a person must make two decisions to win a prize. In a series of five studies, found that people misapprehend probabilities in the MHD. Discusses the MHD's relation to illusion of control, belief perseverance, and the status quo bias. (RJM)

On electrostatic acceleration of plasmas with the Hall effect using electrode shaping

International Nuclear Information System (INIS)

Wang, Zhehui; Barnes, Cris W.

2001-01-01

Resistive magnetohydrodynamics (MHD) is used to model the electromagnetic acceleration of plasmas in coaxial channels. When the Hall effect is considered, the inclusion of resistivity is necessary to obtain physically meaningful solutions. In resistive MHD with the Hall effect, if and only if the electric current and the plasma flow are orthogonal (J·U=0), then there is a conserved quantity, in the form of U 2 /2+w+eΦ/M, along the flow, where U is the flow velocity, Φ is the electric potential, w is the enthalpy, and M is the ion mass. New solutions suggest that in coaxial geometry the Hall effect along the axial plasma flow can be balanced by proper shaping of conducting electrodes, with acceleration then caused by an electrostatic potential drop along the streamlines of the flow. The Hall effect separation of ion and electron flow then just cancels the electrostatic charge separation. Assuming particle ionization increases with energy density in the system, the resulting particle flow rates (J p ) scales with accelerator bias (V bias ) as J p ∝V bias 2 , exceeding the Child--Langmuir limit. The magnitude of the Hall effect (as determined by the Morozov Hall parameter, Ξ, which is defined as the ratio of electric current to particle current) is related to the energy needed for the creation of each ion--electron pair

Switching behaviour of coupled antiferro- and ferromagnetic systems: exchange bias

DEFF Research Database (Denmark)

Lindgård, Per-Anker

2009-01-01

in NiO nanoparticles (Kodama and Berkowitz 1999 Phys. Rev. B 59 6321 and Lindgård 2003 J. Magn. Magn. Mater. 266 88)) in a field severely limits the exchange biasing potential. The interface between the different magnets is found to be that originally assumed by Meiklejohn and Bean (1956 Phys. Rev. 102...

Effect of shell thickness on the exchange bias blocking temperature and coercivity in Co-CoO core-shell nanoparticles

Science.gov (United States)

Thomas, S.; Reethu, K.; Thanveer, T.; Myint, M. T. Z.; Al-Harthi, S. H.

2017-08-01

The exchange bias blocking temperature distribution of naturally oxidized Co-CoO core-shell nanoparticles exhibits two distinct signatures. These are associated with the existence of two magnetic entities which are responsible for the temperature dependence of an exchange bias field. One is from the CoO grains which undergo thermally activated magnetization reversal. The other is from the disordered spins at the Co-CoO interface which exhibits spin-glass-like behavior. We investigated the oxide shell thickness dependence of the exchange bias effect. For particles with a 3 nm thick CoO shell, the predominant contribution to the temperature dependence of exchange bias is the interfacial spin-glass layer. On increasing the shell thickness to 4 nm, the contribution from the spin-glass layer decreases, while upholding the antiferromagnetic grain contribution. For samples with a 4 nm CoO shell, the exchange bias training was minimal. On the other hand, 3 nm samples exhibited both the training effect and a peak in coercivity at an intermediate set temperature Ta. This is explained using a magnetic core-shell model including disordered spins at the interface.

Exchange bias of patterned systems: Model and numerical simulation

International Nuclear Information System (INIS)

Garcia, Griselda; Kiwi, Miguel; Mejia-Lopez, Jose; Ramirez, Ricardo

2010-01-01

The magnitude of the exchange bias field of patterned systems exhibits a notable increase in relation to the usual bilayer systems, where a continuous ferromagnetic film is deposited on an antiferromagnet insulator. Here we develop a model, and implement a Monte Carlo calculation, to interpret the experimental observations which is consistent with experimental results, on the basis of assuming a small fraction of spins pinned ferromagnetically in the antiferromagnetic interface layer.

Exchange bias in finite sized NiO nanoparticles with Ni clusters

International Nuclear Information System (INIS)

Gandhi, Ashish Chhaganlal; Lin, Jauyn Grace

2017-01-01

Structural and magnetic properties of finite sized NiO nanoparticles are investigated with synchrotron X-ray diffraction (XRD), transmission electron microscopy, magnetometer and ferromagnetic resonance (FMR) spectroscopy. A minor Ni phase is detected with synchrotron XRD, attributed to the oxygen defects in the NiO core. A considerable exchange bias of ~100 Oe is observed at 50 K and it drops abruptly and vanishes above 150 K, in association with the reduction of frozen spins. FMR data indicate a strong interaction between ferromagnetic (FM) and antiferromagnetic (AFM) phases below 150 K, consistent with the picture of isolated FM clusters in AFM matrix. - Highlights: • Structural and magnetic properties of finite sized NiO nanoparticles are systematically investigated with several advanced techniques. • A strong interaction between ferromagnetic and antiferromagnetic phases is found below 150 K. • Exchange bias field in finite sized NiO nanoparticles is due to anisotropy energy of Ni clusters over riding the domain wall energy of NiO.

Exchange bias in finite sized NiO nanoparticles with Ni clusters

Energy Technology Data Exchange (ETDEWEB)

Gandhi, Ashish Chhaganlal; Lin, Jauyn Grace, E-mail: jglin@ntu.edu.tw

2017-02-15

Structural and magnetic properties of finite sized NiO nanoparticles are investigated with synchrotron X-ray diffraction (XRD), transmission electron microscopy, magnetometer and ferromagnetic resonance (FMR) spectroscopy. A minor Ni phase is detected with synchrotron XRD, attributed to the oxygen defects in the NiO core. A considerable exchange bias of ~100 Oe is observed at 50 K and it drops abruptly and vanishes above 150 K, in association with the reduction of frozen spins. FMR data indicate a strong interaction between ferromagnetic (FM) and antiferromagnetic (AFM) phases below 150 K, consistent with the picture of isolated FM clusters in AFM matrix. - Highlights: • Structural and magnetic properties of finite sized NiO nanoparticles are systematically investigated with several advanced techniques. • A strong interaction between ferromagnetic and antiferromagnetic phases is found below 150 K. • Exchange bias field in finite sized NiO nanoparticles is due to anisotropy energy of Ni clusters over riding the domain wall energy of NiO.

Spin-injection Hall effect in a planar photovoltaic cell

Czech Academy of Sciences Publication Activity Database

Wunderlich, J.; Irvine, A.C.; Sinova, J.; Park, B.G.; Zarbo, L.P.; Xu, X.L.; Kaestner, B.; Novák, Vít; Jungwirth, Tomáš

2009-01-01

Roč. 5, č. 9 (2009), s. 675-681 ISSN 1745-2473 R&D Projects: GA MŠk LC510; GA AV ČR KAN400100652; GA ČR GEFON/06/E002; GA ČR GEFON/06/E001 EU Projects: European Commission(XE) 215368 - SemiSpinNet Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : extraordinary Hall effects * spintronics * photvoltaics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 15.491, year: 2009

The fabrication of ordered arrays of exchange biased Ni/FeF2 nanostructures

International Nuclear Information System (INIS)

Kovylina, M; Labarta, A; Batlle, X; Erekhinsky, M; Schuller, I K; Morales, R

2010-01-01

The fabrication of ordered arrays of exchange biased Ni/FeF 2 nanostructures by focused ion beam lithography is reported. High quality nano-elements, with controlled removal depth and no significant re-deposition, were carved using small ion beam currents (30 pA), moderate dwell times (1 μs) and repeated passages over the same area. Two types of nanostructures were fabricated: square arrays of circular dots with diameters from 125 ± 8 to 500 ± 12 nm and periodicities ranging from 200 ± 8 to 1000 ± 12 nm, and square arrays of square antidots (207 ± 8 nm in edge length) with periodicities ranging from 300 ± 8 to 1200 ± 12 nm. The arrays were characterized using scanning ion and electron microscopy, and atomic force microscopy. The effect of the patterning on the exchange bias field (i.e., the shift in the hysteresis loop of ferromagnetic Ni due to proximity to antiferromagnetic FeF 2 ) was studied using magneto-transport measurements. These high quality nanostructures offer a unique method to address some of the open questions regarding the microscopic origin of exchange bias. This is not only of major relevance in the fabrication and miniaturization of magnetic devices but it is also one of the important proximity phenomena in nanoscience and materials science.

Magnetization reversal and exchange bias effects in hard/soft ferromagnetic bilayers with orthogonal anisotropies

International Nuclear Information System (INIS)

Navas, D; Ross, C A; Torrejon, J; Béron, F; Pirota, K R; Redondo, C; Sierra, B; Castaño, F; Batallan, F; Toperverg, B P; Devishvili, A

2012-01-01

The magnetization reversal processes are discussed for exchange-coupled ferromagnetic hard/soft bilayers made from Co 0.66 Cr 0.22 Pt 0.12 (10 and 20 nm)/Ni (from 0 to 40 nm) films with out-of-plane and in-plane magnetic easy axes respectively, based on room temperature hysteresis loops and first-order reversal curve analysis. On increasing the Ni layer thicknesses, the easy axis of the bilayer reorients from out-of-plane to in-plane. An exchange bias effect, consisting of a shift of the in-plane minor hysteresis loops along the field axis, was observed at room temperature after in-plane saturation. This effect was associated with specific ferromagnetic domain configurations experimentally determined by polarized neutron reflectivity. On the other hand, perpendicular exchange bias effect was revealed from the out-of-plane hysteresis loops and it was attributed to residual domains in the magnetically hard layer. (paper)

The Behavioral Bias of Foreign Debt Usage in Foreign Exchange Risk Management

DEFF Research Database (Denmark)

Aabo, Tom

We investigate the behavioral bias in the use of debt denominated in foreign currency (foreign debt) in managing foreign exchange risks. From a strictly financial (rational) point of view foreign debt and derivates are close substitutes. Whether e.g. a European firm sells forward US dollars against...... foreign exchange risk management in medium-sized, non-financial firms in Denmark and find a behavioral bias in the use of foreign debt. Among the firms that are internationally involved (operating revenues, costs and/or assets in foreign currency), on average a quarter of the financial debt is denominated...... in foreign currency. The use / non-use of foreign debt is positively related to a number of internationality measures but most significantly to the existence of subsidiaries abroad whereas the degree of usage is particularly related to the magnitude of foreign operating assets. The use of foreign debt...

Polarized neutron reflectivity study of a thermally treated MnIr/CoFe exchange bias system.

Science.gov (United States)

Awaji, Naoki; Miyajima, Toyoo; Doi, Shuuichi; Nomura, Kenji

2010-12-01

It has recently been found that the exchange bias of a MnIr/CoFe system can be increased significantly by adding a thermal treatment to the bilayer. To reveal the origin of the higher exchange bias, we performed polarized neutron reflectivity measurements at the JRR-3 neutron source. The magnetization vector near the MnIr/CoFe interface for thermally treated samples differed from that for samples without the treatment. We propose a model in which the pinned spin area at the interface is extended due to the increased roughness and atomic interdiffusion that result from the thermal treatment.

Ultrathin Limit of Exchange Bias Coupling at Oxide Multiferroic/Ferromagnetic Interfaces

NARCIS (Netherlands)

Huijben, Mark; Yu, P.; Martin, L.W.; Molegraaf, Hajo; Chu, Y.H.; Holcomb, M.B.; Balke, N.; Rijnders, Augustinus J.H.M.; Ramesh, R.

2013-01-01

Exchange bias coupling at the multiferroic- ferromagnetic interface in BiFeO3/La0.7Sr0.3MnO3 heterostructures exhibits a critical thickness for ultrathin BiFeO3 layers of 5 unit cells (2 nm). Linear dichroism measurements demonstrate the dependence on the BiFeO3 layer thickness with a strong

Strain-mediated magnetic and transport properties of epitaxial LuxFe3-xO4 films

Science.gov (United States)

Wang, P.; Jin, C.; Zheng, D. X.; Bai, H. L.

2015-10-01

Strain mediated structure, magnetic, and transport properties of spinel ferrites were investigated by growing epitaxial LuxFe3-xO4 (LFO, 0 ≤ x ≤ 0.26 ) films on SrTiO3 and MgO substrates with in-plane compressive and tensile strains, respectively. The lattice parameter of LFO films decreases on SrTiO3 substrates, while increases on MgO substrates with the increasing Lu content. The LFO films on SrTiO3 substrates exhibit larger saturation magnetization and smaller exchange bias and coercive field. Phase shift of anisotropic magnetoresistance is also observed in the LFO films on SrTiO3 substrates. In addition, the nonmagnetic Lu3+ ions in spinel ferrites enhance the spin canting, which further increases the exchange bias and coercive field and strengthens the four-fold symmetry of anisotropic magnetoresistance and the two-fold symmetry of planar Hall effect.

Suppression of exchange bias effect in maghemite nanoparticles functionalized with H{sub 2}Y

Energy Technology Data Exchange (ETDEWEB)

Guivar, Juan A. Ramos, E-mail: juan.ramos5@unmsm.edu.pe [Faculty of Physical Sciences, National University of San Marcos, P. O. Box 14-0149, Lima, 14 Peru (Peru); Morales, M.A. [Departamento de Física Teórica e Experimental, UFRN, Natal, RN, 59078-970 Brazil (Brazil); Litterst, F. Jochen [Institut für Physik der Kondensierten Materie, Technische Universität Braunschweig, Braunschweig, 38110 Germany (Germany)

2016-12-15

The structural, vibrational, morphological and magnetic properties of maghemite (γ-Fe{sub 2}O{sub 3}) nanoparticles functionalized with polar molecules EDTA(or H{sub 4}Y) and H{sub 2}Y are reported. The samples were functionalized before and after total synthesis of γ-Fe{sub 2}O{sub 3} nanoparticles. The molecules are anchored on the monodentate mode on the nanoparticles surface. Transmission electron microscopy (TEM) revealed the formation of maghemite nanoparticles with small diameter of 4 nm for the sample functionalized upon synthesis and 7.6 and 6.9 nm for the samples functionalized with EDTA and H{sub 2}Y after the formation of nanoparticles. Exchange bias phenomena were observed in some of the samples functionalized with EDTA at temperatures below 70 K. The presence of the bias effect was discussed in terms of the formation of a thin layer of a secondary phase like lepidocrocite, and the absence of this effect was explained in terms of the chemisorption of carboxylic groups from EDTA which suppressed the canting. Studies of Mössbauer spectroscopy as a function of temperature showed slow relaxation effects and allowed discussion of the secondary phase. In the M–T curves a maximum around 116 K was associated with this secondary phase also in agreement with the Mössbauer studies. The dynamic properties were studied by AC susceptibility, the out of phase signal revealed a spin glass like regime below 36.5 K. - Highlights: • Coprecipitation in alkaline medium was used for the synthesis of EDTA functionalized small maghemite nanoparticles. • Exchange bias effect was observed due to a thin layer of lepidocrocite like second phase. • The sample coprecipitated in a weak base did not show exchange bias effect. • The bias effect is discussed in terms of suppression of canting due to chemisorption of carboxylic groups from EDTA.

Magnetic field propagation in a two ion species planar plasma opening switch

International Nuclear Information System (INIS)

Strauss, H. R.; Doron, R.; Arad, R.; Rubinstein, B.; Maron, Y.; Fruchtman, A.

2007-01-01

Three fluid plasma evolution equations are applied to the problem of magnetic field propagation in a planar plasma opening switch. For certain initial conditions in which Hall parameter H∼1, magnetic field penetration due to the Hall field, initially, as expected, either opposes or adds to the hydromagnetic pushing, depending on the polarity of the magnetic field relative to the density gradient. Later, however, the plasma pushing by the magnetic field is found in the case studied here to modify the plasma density in a way that the density gradient tends to align with the magnetic field gradient, effectively turning off the Hall effect. The penetration of the magnetic field then ceases and plasma pushing becomes the dominant process

Asymmetric magnetization reversal in exchange-biased Co/Pt multilayers

Energy Technology Data Exchange (ETDEWEB)

Dijken, Sebastiaan van [SFI Trintiy Nanoscience Laboratory, Physics Department, Trinity College, Dublin 2 (Ireland); Czapkiewicz, M.; Zoladz, M.; Stobiecki, T. [Department of Electronics, AGH University of Science and Technology, Krakow 30-059 (Poland)

2006-01-01

A detailed study of the magnetization reversal process in [20 Aa Pt/t Aa Co]{sub 3}/100 Aa IrMn/20 Aa Pt multilayers with 4 Aa{<=}t{<=}9 Aa is presented. The hysteresis of as-deposited films with t{>=} 5Aa is found to be asymmetric. This asymmetry is explained by a lateral variation in the perpendicular exchange bias direction due to the growth of IrMn onto multi-domain Co/Pt multilayers. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Theory of anomalous Hall effect in europium chalcogenides

International Nuclear Information System (INIS)

Sinkkonen, J.

1976-04-01

Considering the exchange interaction between the conduction electrons in a broad 5d-type band and the magnetic electrons in the localized 4f-shells, it is shown that in addition to the ordinary d-f exchange diagonal in band index, there is also a non-diagonal interaction representing a one particle transfer between the conduction and magnetic electrons. Including the spin-orbit coupling, an effective Hamiltonian for the conductionelectrons is obtained, which contains additional asymmetric scattering terms. The ordinary d-f exchange is treated as the dominating scattering interaction. The anomatous Hall effect results by skew scattering and side jump mechanisms. The density matrix method is used to derive the transport properties. The effect of the correlation of spins at different lattice sites is discussed. The model indicates that the anomatous Hall effect can be seen in heavily doped samples. (author)

Unconventional quantum Hall effect in Floquet topological insulators

KAUST Repository

Tahir, M.

2016-07-27

We study an unconventional quantum Hall effect for the surface states of ultrathin Floquet topological insulators in a perpendicular magnetic field. The resulting band structure is modified by photon dressing and the topological property is governed by the low-energy dynamics of a single surface. An exchange of symmetric and antisymmetric surface states occurs by reversing the lights polarization. We find a novel quantum Hall state in which the zeroth Landau level undergoes a phase transition from a trivial insulator state, with Hall conductivity αyx = 0 at zero Fermi energy, to a Hall insulator state with αyx = e2/2h. These findings open new possibilities for experimentally realizing nontrivial quantum states and unusual quantum Hall plateaus at (±1/2,±3/2,±5/2, ...)e2/h. © 2016 IOP Publishing Ltd Printed in the UK.

Unconventional quantum Hall effect in Floquet topological insulators

KAUST Repository

Tahir, M.; Vasilopoulos, P.; Schwingenschlö gl, Udo

2016-01-01

We study an unconventional quantum Hall effect for the surface states of ultrathin Floquet topological insulators in a perpendicular magnetic field. The resulting band structure is modified by photon dressing and the topological property is governed by the low-energy dynamics of a single surface. An exchange of symmetric and antisymmetric surface states occurs by reversing the lights polarization. We find a novel quantum Hall state in which the zeroth Landau level undergoes a phase transition from a trivial insulator state, with Hall conductivity αyx = 0 at zero Fermi energy, to a Hall insulator state with αyx = e2/2h. These findings open new possibilities for experimentally realizing nontrivial quantum states and unusual quantum Hall plateaus at (±1/2,±3/2,±5/2, ...)e2/h. © 2016 IOP Publishing Ltd Printed in the UK.

Exchange bias and asymmetric hysteresis loops from a microscopic model of core/shell nanoparticles

International Nuclear Information System (INIS)

Iglesias, Oscar; Batlle, Xavier; Labarta, Amilcar

2007-01-01

We present Monte Carlo simulations of hysteresis loops of a model of a magnetic nanoparticle with a ferromagnetic core and an antiferromagnetic shell with varying values of the core/shell interface exchange coupling which aim to clarify the microscopic origin of exchange bias observed experimentally. We have found loop shifts in the field direction as well as displacements along the magnetization axis that increase in magnitude when increasing the interfacial exchange coupling. Overlap functions computed from the spin configurations along the loops have been obtained to explain the origin and magnitude of these features microscopically

NiO/Fe(001): Magnetic anisotropy, exchange bias, and interface structure

Energy Technology Data Exchange (ETDEWEB)

Mlynczak, E. [Jerzy Haber Institute of Catalysis and Surface Chemistry, Polish Academy of Sciences, Niezapominajek 8, 30-239 Krakow (Poland); Luches, P. [S3, Istituto Nanoscienze-CNR, Via G. Campi 213/a, I-41125 Modena (Italy); Valeri, S. [S3, Istituto Nanoscienze-CNR, Via G. Campi 213/a, I-41125 Modena (Italy); Dipartimento di Scienze Fisiche, Matematiche e Informatiche, Universita di Modena e Reggio Emilia, Via G. Campi 213/a, 41100 Modena (Italy); Korecki, J. [Jerzy Haber Institute of Catalysis and Surface Chemistry, Polish Academy of Sciences, Niezapominajek 8, 30-239 Krakow (Poland); Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al.Mickiewicza 30, 30-059 Krakow (Poland)

2013-06-21

The magnetic and structural properties of NiO/Fe epitaxial bilayers grown on MgO(001) were studied using magnetooptic Kerr effect (MOKE) and conversion electron Moessbauer spectroscopy (CEMS). The bilayers were prepared under ultra high vacuum conditions using molecular beam epitaxy with oblique deposition. Two systems were compared: one showing the exchange bias (100ML-NiO/24ML-Fe), ML stands for a monolayer, and another where the exchange bias was not observed (50ML-NiO/50ML-Fe). For both, the magnetic anisotropy was found to be complex, yet dominated by the growth-induced uniaxial anisotropy. The training effect was observed for the 100ML-NiO/24ML-Fe system and quantitatively described using the spin glass model. The composition and magnetic state of the interfacial Fe layers were studied using {sup 57}Fe-CEMS. An iron oxide phase (Fe{sup 3+}{sub 4}Fe{sup 2+}{sub 1}O{sub 7}), as thick as 31 A, was identified at the NiO/Fe interface in the as-deposited samples. The ferrimagnetic nature of the interfacial iron oxide film explains the complex magnetic anisotropy observed in the samples.

45° sign switching of effective exchange bias due to competing anisotropies in fully epitaxial Co3FeN/MnN bilayers

Science.gov (United States)

Hajiri, T.; Yoshida, T.; Filianina, M.; Jaiswal, S.; Borie, B.; Asano, H.; Zabel, H.; Kläui, M.

2018-01-01

We report an unusual angular-dependent exchange bias effect in ferromagnet/antiferromagnet bilayers, where both ferromagnet and antiferromagnet are epitaxially grown. Numerical model calculations predict an approximately 45° period for the sign switching of the exchange-bias field, depending on the ratio between magnetocrystalline anisotropy and exchange-coupling constant. The switching of the sign is indicative of a competition between a fourfold magnetocrystalline anisotropy of the ferromagnet and a unidirectional anisotropy field of the exchange coupling. This predicted unusual angular-dependent exchange bias and its magnetization switching process are confirmed by measurements on fully epitaxial Co3FeN/MnN bilayers by longitudinal and transverse magneto-optic Kerr effect magnetometry. These results provide a deeper understanding of the exchange coupling phenomena in fully epitaxial bilayers with tailored materials and open up a complex switching energy landscape engineering by anisotropies.

Training-induced inversion of spontaneous exchange bias field on La{sub 1.5}Ca{sub 0.5}CoMnO{sub 6}

Energy Technology Data Exchange (ETDEWEB)

Bufaiçal, L., E-mail: lbufaical@ufg.br [Instituto de Física, Universidade Federal de Goiás, 74001-970 Goiânia, GO (Brazil); Finkler, R.; Coutrim, L.T. [Instituto de Física, Universidade Federal de Goiás, 74001-970 Goiânia, GO (Brazil); Pagliuso, P.G. [Instituto de Física “Gleb Wataghin”, UNICAMP, 13083-859 Campinas, SP (Brazil); Grossi, C.; Stavale, F.; Baggio-Saitovitch, E.; Bittar, E.M. [Centro Brasileiro de Pesquisas Físicas, Rua Dr. Xavier Sigaud 150, 22290-180 Rio de Janeiro, RJ (Brazil)

2017-07-01

Highlights: • La{sub 1.5}Ca{sub 0.5}CoMnO{sub 6} exhibits spontaneous exchange bias effect at low temperature. • For successive hysteresis cycles it inverts the shift sign from negative to positive. • For a field cooled hysteresis cycle, the exchange bias effect greatly enhances. • Our results are compared to those of the analogue compound La{sub 1.5}Sr{sub 0.5}CoMnO{sub 6}. - Abstract: In this work we report the synthesis and structural, electronic and magnetic properties of La{sub 1.5}Ca{sub 0.5}CoMnO{sub 6} double-perovskite. This is a re-entrant spin cluster material which exhibits a non-negligible negative exchange bias effect when it is cooled in zero magnetic field from an unmagnetized state down to low temperature. X-ray powder diffraction, X-ray photoelectron spectroscopy and magnetometry results indicate mixed valence state at Co site, leading to competing magnetic phases and uncompensated spins at the magnetic interfaces. We compare the results for this Ca-doped material with those reported for the resemblant compound La{sub 1.5}Sr{sub 0.5}CoMnO{sub 6}, and discuss the much smaller spontaneous exchange bias effect observed for the former in terms of its structural and magnetic particularities. For La{sub 1.5}Ca{sub 0.5}CoMnO{sub 6}, when successive magnetization loops are carried, the spontaneous exchange bias field inverts its sign from negative to positive from the first to the second measurement. We discuss this behavior based on the disorder at the magnetic interfaces, related to the presence of a glassy phase. This compound also exhibits a large conventional exchange bias, for which there is no sign inversion of the exchange bias field for consecutive cycles.

Charge ordering and exchange bias behaviors in Co{sub 3}O{sub 4} porous nanoplatelets and nanorings

Energy Technology Data Exchange (ETDEWEB)

Debnath, J.C., E-mail: jcd341@uowmail.edu.au [Institute for Frontier Materials, Deakin University, Geelong, VIC 3216 (Australia); Wang, Jianli [Institute for Superconductivity and Electronic Materials, University of Wollongong, Wollongong, NSW 2522 (Australia); Zeng, R. [Institute for Superconductivity and Electronic Materials, University of Wollongong, Wollongong, NSW 2522 (Australia); School of Materials Science and Engineering, Faculty of Science, UNSW, Sydney NSW 2052 (Australia)

2017-01-01

We present the synthesis of α-Co{sub 3}O{sub 4} porous nanoplatelets and hexagonal nanorings using microwave-assisted hydrothermal and conventional chemical reaction methods. The x-ray diffraction (XRD) and refinement analyses indicate the α-Co{sub 3}O{sub 4} crystal structure, and the x-ray photoelectron spectrum (XPS) indicates the high purity of the samples. The M–T (including 1/χ–T) curves indicate an antiferromagnetic transition at about 35 K in both kind of samples but the interesting finding was made that a charge-ordered (CO) state appears at 250 K for the nanoplatelets sample whereas it is inattentive for the nanorings. The antiferromagnetic transition temperature T{sub N} is lower than that of the bulk α-Co{sub 3}O{sub 4} single crystal due to the nanosized structures. We observed quite significant exchange bias for nanorings. The exchange bias behavior of the α-Co{sub 3}O{sub 4} hexagonal nanorings is consistent with an antiferromagnetic (AFM) Co{sub 3}O{sub 4} core and spin-glass like shell. - Highlights: ●Charge-ordered state appears for the Co{sub 3}O{sub 4} nanoplatelets but absent for the nanorings. ●Quite significant exchange bias is only observed for Co{sub 3}O{sub 4} nanorings. ●Exchange bias behavior of Co{sub 3}O{sub 4} nanorings is consistent with spin-glass like shell. ●Potential for ultrahigh-density magnetic recording and spin valve devices.

Disclosure of double exchange bias effect in chromium (III) oxide nanoparticles

Czech Academy of Sciences Publication Activity Database

Rinaldi-Montes, N.; Gorria, P.; Fuertes, A.B.; Martinez-Blanco, D.; Olivi, L.; Puente-Orench, I.; Alonso, J.M.; Phan, M.-H.; Skrikanth, H.; Martí, Xavier; Blanco, J.A.

2017-01-01

Roč. 53, č. 1 (2017), s. 1-4, č. článku 2300204. ISSN 0018-9464 R&D Projects: GA ČR GB14-37427G Institutional support: RVO:68378271 Keywords : antiferromagnetism * exchange bias (EB) * magnetic nanoparticles * magnetoelectric effect Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.243, year: 2016

Doping dependent magnetism and exchange bias in CaMn{sub 1−x}W{sub x}O{sub 3} manganites

Energy Technology Data Exchange (ETDEWEB)

Markovich, V., E-mail: markoviv@bgu.ac.il; Gorodetsky, G. [Department of Physics, Ben-Gurion University of the Negev, 84105 Beer-Sheva (Israel); Fita, I. [Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02-668 Warsaw (Poland); Donetsk Institute for Physics and Technology, National Academy of Sciences, 83114 Donetsk (Ukraine); Wisniewski, A.; Puzniak, R. [Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02-668 Warsaw (Poland); Mogilyansky, D. [The Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, Beer-Sheva 84105 (Israel); Naumov, S. V.; Mostovshchikova, E. V.; Telegin, S. V. [Institute of Metal Physics, Ural Branch of RAS, Kovalevskaya Street 18, Ekaterinburg 620990 (Russian Federation); Jung, G. [Department of Physics, Ben-Gurion University of the Negev, 84105 Beer-Sheva (Israel); Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02-668 Warsaw (Poland)

2014-09-07

Magnetic properties of CaMn{sub 1−x}W{sub x}O{sub 3} (0 ≤ x ≤ 0.1) have been investigated, and the research was focused on the exchange bias (EB) phenomenon in CaMn{sub 0.93}W{sub 0.07}O{sub 3}. Magnetic ground state was found to be dependent on tungsten doping level and the following states were distinguished: (i) G-type antiferromagnetic (AFM) state with a weak ferromagnetic (FM) component at x = 0 and 0.04; (ii) mostly orbitally ordered C-type AFM at x = 0.07 and 0.1. For the studied manganites, spontaneous magnetization increases sharply with increasing doping level reaching M{sub 0} ≈ 9.5 emu/g at T = 10 K for x = 0.04, and then decreases rapidly reaching zero for x = 0.1. Exchange bias effect, manifested by vertical and horizontal shifts in the hysteresis loop for field cooled sample, has been observed in CaMn{sub 0.93}W{sub 0.07}O{sub 3}. Exchange bias field, coercivity, remanence asymmetry, and magnetic coercivity depend strongly on temperature, cooling field, and maximal measuring field. Horizontal and vertical shifts of magnetization loop sharply decrease with increasing temperature and vanish above 70 K, whereas coercivity and magnetic coercivity disappear only above 100 K (temperature of transition to the G-type AFM state). The exchange bias field H{sub EB} increases with increasing cooling field H{sub cool} and goes through a broad maximum at 40 kOe, while the remanence asymmetry increases monotonously in the entire investigated cooling field range, up to 50 kOe. For the compound with x = 0.07, the size of the FM regions ≈2 nm was estimated from the dependence of exchange bias field H{sub EB} upon H{sub cool}. It is suggested that the exchange bias originates from interface exchange coupling between small FM clusters and the G-type AFM phase inside the primary C-type orbitally ordered AFM phase.

Valley Hall effect and Nernst effect in strain engineered graphene

Science.gov (United States)

Niu, Zhi Ping; Yao, Jian-ming

2018-04-01

We theoretically predict the existence of tunneling valley Hall effect and Nernst effect in the normal/strain/normal graphene junctions, where a strained graphene is sandwiched by two normal graphene electrodes. By applying an electric bias a pure transverse valley Hall current with longitudinal charge current is generated. If the system is driven by a temperature bias, a valley Nernst effect is observed, where a pure transverse valley current without charge current propagates. Furthermore, the transverse valley current can be modulated by the Fermi energy and crystallographic orientation. When the magnetic field is further considered, we obtain a fully valley-polarized current. It is expected these features may be helpful in the design of the controllable valleytronic devices.

Exchange Bias in Layered GdBaCo2O5.5 Cobaltite

Science.gov (United States)

Solin, N. I.; Naumov, S. V.; Telegin, S. V.; Korolev, A. V.

2017-12-01

It is established that excess oxygen content δ influences the exchange bias (EB) in layered GdBa-Co2O5 + δ cobaltite. The EB effect arises in p-type (δ > 0.5) cobaltite and disappears in n-type (δ training effect inherent in systems with EB has been studied. The results are explained in terms of exchange interaction between the FM and AFM phases. It is assumed that the EB originates from the coexistence of Co3+ and Co4+ ions that leads to the formation of monodomain FM clusters in the AFM matrix of cobaltite.

45○ sign switching of effective exchange bias due to competing anisotropies in fully epitaxial Co3FeN/MnN bilayers.

Science.gov (United States)

Hajiri, Tetsuya; Yoshida, Takuya; Filianina, Mariia; Jaiswal, Samridh; Borie, Benjamin; Asano, H; Zabel, Hartmut; Klaui, Mathias

2017-11-20

We report an unusual angular-dependent exchange bias effect in ferromagnet/antiferromagnet bilayers, where both ferromagnet and antiferromagnet are epitaxially grown. Numerical model calculations predict an approximately 45$^\\circ$ period for the sign switching of the exchange-bias field, depending on the ratio between magnetocrystalline anisotropy and exchange-coupling constant. The switching of the sign is indicative of a competition between a fourfold magnetocrystalline anisotropy of the ferromagnet and a unidirectional anisotropy field of the exchange coupling. This predicted unusual angular-dependent exchange bias and its magnetization switching process are confirmed by measurements on fully epitaxial Co$_3$FeN/MnN bilayers by longitudinal and transverse magneto-optic Kerr effect magnetometry. These results provide a deeper understanding of the exchange coupling phenomena in fully epitaxial bilayers with tailored materials and open up a complex switching energy landscape engineering by anisotropies. © 2017 IOP Publishing Ltd.

Tunable exchange bias effect in magnetic Bi0.9Gd0.1Fe0.9Ti0.1O3 nanoparticles at temperatures up to 250K

DEFF Research Database (Denmark)

Basith, M. A.; Khan, F. A.; Ahmmad, Bashir

2015-01-01

that the strength of the exchange bias effect is tunable by the field cooling. The HEB values are also found to be dependent on the temperature. This magnetically tunable exchange bias obtained at temperatures up to 250K in Bi0.9Gd0.1Fe0.9Ti0.1O3 nanoparticles may be worthwhile for potential applications.......The exchange bias (EB) effect has been observed in magnetic Bi0.9Gd0.1Fe0.9Ti0.1O3 nanoparticles.The influence of magnetic field cooling on the exchange bias effect has also been investigated. The magnitude of the exchange bias field (HEB) increases with the cooling magnetic field, showing...

Junction Potentials Bias Measurements of Ion Exchange Membrane Permselectivity.

Science.gov (United States)

Kingsbury, Ryan S; Flotron, Sophie; Zhu, Shan; Call, Douglas F; Coronell, Orlando

2018-04-17

Ion exchange membranes (IEMs) are versatile materials relevant to a variety of water and waste treatment, energy production, and industrial separation processes. The defining characteristic of IEMs is their ability to selectively allow positive or negative ions to permeate, which is referred to as permselectivity. Measured values of permselectivity that equal unity (corresponding to a perfectly selective membrane) or exceed unity (theoretically impossible) have been reported for cation exchange membranes (CEMs). Such nonphysical results call into question our ability to correctly measure this crucial membrane property. Because weighing errors, temperature, and measurement uncertainty have been shown to not explain these anomalous permselectivity results, we hypothesized that a possible explanation are junction potentials that occur at the tips of reference electrodes. In this work, we tested this hypothesis by comparing permselectivity values obtained from bare Ag/AgCl wire electrodes (which have no junction) to values obtained from single-junction reference electrodes containing two different electrolytes. We show that permselectivity values obtained using reference electrodes with junctions were greater than unity for CEMs. In contrast, electrodes without junctions always produced permselectivities lower than unity. Electrodes with junctions also resulted in artificially low permselectivity values for AEMs compared to electrodes without junctions. Thus, we conclude that junctions in reference electrodes introduce two biases into results in the IEM literature: (i) permselectivity values larger than unity for CEMs and (ii) lower permselectivity values for AEMs compared to those for CEMs. These biases can be avoided by using electrodes without a junction.

Inhibitory Control in a Notorious Brain Teaser: The Monty Hall Dilemma

Science.gov (United States)

Saenen, Lore; Heyvaert, Mieke; Van Dooren, Wim; Onghena, Patrick

2015-01-01

The Monty Hall dilemma (MHD) is a counterintuitive probability problem in which participants often use misleading heuristics, such as the equiprobability bias. Finding the optimal solution to the MHD requires inhibition of these heuristics. In the current study, we investigated the relation between participants' equiprobability bias and their MHD…

Exchange bias induced at a Co2FeAl0.5Si0.5/Cr interface

International Nuclear Information System (INIS)

Yu, C N T; Vick, A J; Inami, N; Ono, K; Frost, W; Hirohata, A

2017-01-01

In order to engineer the strength of an exchange bias in a cubic Heusler alloy layer, crystalline strain has been induced at a ferromagnet/antiferromagnet interface by their lattice mismatch in addition to the conventional interfacial exchange coupling between them. Such interfaces have been formed in (Co 2 FeAl 0.5 Si 0.5 (CFAS)/Cr) 3 structures grown by ultrahigh vacuum molecular beam epitaxy. The magnetic and structural properties have been characterised to investigate the exchange interactions at the CFAS/Cr interfaces. Due to the interfacial lattice mismatch of 1.4%, the maximum offset of 18 Oe in a magnetisation curve has been measured for the case of a CFAS (2 nm)/Cr (0.9 nm) interface at 193 K. The half-metallic property of CFAS has been observed to remain unchanged, which agrees with the theoretical prediction by Culbert et al (2008 J. Appl. Phys . 103 07D707). Such a strain-induced exchange bias may provide insight of the interfacial interactions and may offer a wide flexibility in spintronic device design. (paper)

Wireless power transfer exploring spin rectification and inverse spin Hall effects

Science.gov (United States)

Seeger, R. L.; Garcia, W. J. S.; Dugato, D. A.; da Silva, R. B.; Harres, A.

2018-04-01

Devices based on spin rectification effects are of great interest for broadband communication applications, since they allow the rectification of radio frequency signals by simple ferromagnetic materials. The phenomenon is enhanced at ferromagnetic resonance condition, which may be attained when an external magnetic field is applied. The necessity of such field, however, hinders technological applications. Exploring spin rectification and spin Hall effects in exchange-biased samples, we were able to rectify radio frequency signals without an external applied magnetic field. Direct voltages of the order of μV were obtained when Ta/NiFe/FeMn/Ta thin films were exposed to microwaves in a shorted microstrip line for a relatively broad frequency range. Connecting the films to a resistive load, we estimated the fraction of the incident radio frequency power converted into usable dc power.

Switching behaviour of coupled antiferro- and ferromagnetic systems: exchange bias

Energy Technology Data Exchange (ETDEWEB)

Lindgaard, Per-Anker [Materials Research Division, Risoe National Laboratory for Sustainable Energy, Danish Technical University, DK-4000 Roskilde (Denmark)

2009-11-25

The switching behaviour, under reversal of an external field, of a simple, ideal magnetic nanoparticle is studied and the interplay between antiferromagnets and ferromagnets elucidated. It is found that the switching between various multi- q ordering in fcc antiferromagnets (as found theoretically in NiO nanoparticles (Kodama and Berkowitz 1999 Phys. Rev. B 59 6321 and Lindgaard 2003 J. Magn. Magn. Mater. 266 88)) in a field severely limits the exchange biasing potential. The interface between the different magnets is found to be that originally assumed by Meiklejohn and Bean (1956 Phys. Rev. 102 1413).

Exchange bias effect in Au-Fe3O4 nanocomposites

International Nuclear Information System (INIS)

Chandra, Sayan; Frey Huls, N A; Phan, M H; Srinath, S; Srikanth, H; Garcia, M A; Lee, Youngmin; Wang, Chao; Sun, Shouheng; 2UB, Universitat de Barcelona, Avenida Diagonal 647, E-08028 Barcelona (Spain))" data-affiliation=" (Departament de Física Fonamental and Institut de Nanociència i Nanotecnologia IN2UB, Universitat de Barcelona, Avenida Diagonal 647, E-08028 Barcelona (Spain))" >Iglesias, Òscar

2014-01-01

We report exchange bias (EB) effect in the Au-Fe 3 O 4 composite nanoparticle system, where one or more Fe 3 O 4 nanoparticles are attached to an Au seed particle forming ‘dimer’ and ‘cluster’ morphologies, with the clusters showing much stronger EB in comparison with the dimers. The EB effect develops due to the presence of stress at the Au-Fe 3 O 4 interface which leads to the generation of highly disordered, anisotropic surface spins in the Fe 3 O 4 particle. The EB effect is lost with the removal of the interfacial stress. Our atomistic Monte Carlo studies are in excellent agreement with the experimental results. These results show a new path towards tuning EB in nanostructures, namely controllably creating interfacial stress, and opens up the possibility of tuning the anisotropic properties of biocompatible nanoparticles via a controllable exchange coupling mechanism. (paper)

Establishing exchange bias below T-N with polycrystalline Ni0.52Co0.48O/Co bilayers

DEFF Research Database (Denmark)

Berkowitz, A.E.; Hansen, Mikkel Fougt; Tang, Y.J.

2005-01-01

Exchange-coupled bilayers of polycrystalline ferromagnetic (FM) Co on antiferromagnetic (AFM) Ni0.52Co0.48O were investigated with emphasis on the issue of establishing an exchange-bias field, H-E, below the AFM ordering temperature, T-N. It was found that field-cooling the bilayers through T-N p...

Some aspects of achieving an ultimate accuracy during insertion device magnetic measurements by a Hall probe

International Nuclear Information System (INIS)

Vasserman, I. B.; Xu, J. Z.; Strelnikov, N. O.

2013-01-01

An extensive test of a new Senis 2-axis Hall probe was done at the Advanced Photon Source using the Undulator A device and calibration system. This new probe has clear advantages compared with previously used Bell and Sentron Hall probes: very stable zero offset (less than the noise of 0.026 G) and compensated planar Hall effect. It can be used with proper calibration even for first and second field integral measurements. A comparison with reference measurements by long stretched coil shows that the difference in the first field integral measurement results for a 2.4-m-long Undulator A device is between 17 G cm for the best of four Hall probes used for the test and 51 G cm for the worst of them for all gap ranges from 10.5 mm to 150 mm.

Influence of ion bombardment induced patterning of exchange bias in pinned artificial ferrimagnets on the interlayer exchange coupling

Energy Technology Data Exchange (ETDEWEB)

Schmalhorst, Jan; Reiss, Guenter; Hoenik, V. [Thin Films and Nanostructures, Department of Physics, Univ. Bielefeld (Germany); Weis, Tanja; Engel, Dieter; Ehresmann, Arno [Institute of Physics and Center for Interdisciplinary Nanostructure Science and Technology, Kassel Univ. (Germany)

2007-07-01

Artificial ferrimagnets (AFi) have many applications as, e.g., pinned reference electrodes in magnetic tunnel junctions. It is known that the application of ion bombardment induced magnetic patterning with He ions on a single layer reference electrode of magnetic tunnel junctions is possible. For some applications a combination of ion bombardment induced magnetic patterning and artificial ferrimagnets as a reference electrode is desirable. The effect of ion bombardment induced magnetic patterning on pinned artificial ferrimagnets with a Ru interlayer which is frequently used in magnetic tunnel junctions as well as pinned AFis with a Cu interlayer has been tested. Special attention has been given to the question whether the antiferromagnetic interlayer exchange coupling can withstand the ion dose necessary to turn the exchange bias.

Controlling exchange bias in Co-CoOx nanoparticles by oxygen content

OpenAIRE

Kovylina, Miroslavna; del Muro, Montserrat Garcia; Konstantinovic, Zorica; Varela, Manuel; Iglesias, Oscar; Labarta, Amilcar; Batlle, Xavier

2009-01-01

We report on the occurrence of exchange bias on laser-ablated granular thin films composed of Co nanoparticles embedded in amorphous zirconia matrix. The deposition method allows controlling the degree of oxidation of the Co particles by tuning the oxygen pressure at the vacuum chamber (from 2x10^{-5} to 10^{-1} mbar). The nature of the nanoparticles embedded in the nonmagnetic matrix is monitored from metallic, ferromagnetic (FM) Co to antiferromagnetic (AFM) CoOx, with a FM/AFM intermediate...

Effect of Anode Dielectric Coating on Hall Thruster Operation

International Nuclear Information System (INIS)

Dorf, L.; Raitses, Y.; Fisch, N.J.; Semenov, V.

2003-01-01

An interesting phenomenon observed in the near-anode region of a Hall thruster is that the anode fall changes from positive to negative upon removal of the dielectric coating, which is produced on the anode surface during the normal course of Hall thruster operation. The anode fall might affect the thruster lifetime and acceleration efficiency. The effect of the anode coating on the anode fall is studied experimentally using both biased and emissive probes. Measurements of discharge current oscillations indicate that thruster operation is more stable with the coated anode

Modeling of exchange bias in the antiferromagnetic (core)/ferromagnetic (shell) nanoparticles with specialized shapes

International Nuclear Information System (INIS)

Hu Yong; Liu Yan; Du An

2011-01-01

Zero-field-cooled (ZFC) and field-cooled (FC) hysteresis loops of egg- and ellipsoid-shaped nanoparticles with inverted ferromagnetic (FM)-antiferromagnetic (AFM) core-shell morphologies are simulated using a modified Monte Carlo method, which takes into account both the thermal fluctuations and energy barriers during the rotation of spin. Pronounced exchange bias (EB) fields and reduced coercivities are obtained in the FC hysteresis loops. The analysis of the microscopic spin configurations allows us to conclude that the magnetization reversal occurs by means of the nucleation process during both the ZFC and FC hysteresis branches. The nucleation takes place in the form of 'sparks' resulting from the energy competition and the morphology of the nanoparticle. The appearance of EB in the FC hysteresis loops is only dependent on that the movements of 'sparks' driven by magnetic field at both branches of hysteresis loops are not along the same axis, which is independent of the strength of AFM anisotropy. The tilt of 'spark' movement with respect to the symmetric axis implies the existence of additional unidirectional anisotropy at the AFM/FM interfaces as a consequence of the surplus magnetization in the AFM core, which is the commonly accepted origin of EB. Our simulations allow us to clarify the microscopic mechanisms of the observed EB behavior, not accessible in experiments. - Highlights: → A modified Monte Carlo method considers thermal fluctuations and energy barriers. → Egg and ellipsoid nanoparticles with inverted core-shell morphology are studied. → Pronounced exchange bias fields and reduced coercivities may be detected. → 'Sparks' representing nucleation sites due to energy competition are observed. → 'Sparks' can reflect or check directly and vividly the origin of exchange bias.

Fingerprints of surface magnetism in Cr2O3 based exchange bias heterostructures

Science.gov (United States)

He, Xi; Wang, Yi; Binek, Ch.

2009-03-01

Magnetoelectric materials experienced a recent revival as promising components of novel spintronic devices [1, 2, 3]. Since the magnetoelectric (ME) effect is relativistically small in traditional antiferromagnetic (AF) compounds like Cr2O3 (max. αzz 4ps/m) and also cross-coupling between ferroic order parameters is typically small in the modern multiferroics, it is a challenge to electrically induce sufficient magnetization required for the envisioned device applications. In exchange bias systems the bias field depends critically on the AF interface magnetization. Hence, a strong relation between the latter and the surface magnetization of the free Cr2O3 pinning layer can be expected. Our recent research indicates that there are surface magnetic phase transitions in free Cr2O3 (111) films accompanying surface structural phase transitions. Well defined AF interface magnetization is initialized through ME annealing to T=20K. Subsequently, the interface magnetization is thermally driven through phase transitions at T=120 and 210K. Their effects on the exchange bias are studied in Cr2O3 (111)/CoPt films with the help of polar Kerr and SQUID magnetometry. [1] P. Borisov et al. Phys. Rev. Lett. 94, 117203 (2005). [2] Ch. Binek, B.Doudin, J. Phys. Condens. Matter 17, L39 (2005). [3] R. Ramesh et al. 2007 Nature Materials 6 21. Financial support by NSF through Career DMR-0547887, MRSEC DMR-0820521 and the NRI.

Effect of spin structure transition in IrMn on the CoPd/IrMn perpendicular exchange biased system

Energy Technology Data Exchange (ETDEWEB)

Janjua, Muhammad Bilal; Guentherodt, Gernot [II. Physikalisches Institut A, RWTH Aachen University, Aachen (Germany)

2011-07-01

The exchange bias (EB) phenomenon is studied in MBE grown Pd(10 nm)/CoPd(x=8,16,30 nm)/IrMn(15 nm)/Pd(4 nm) samples, which exhibit a perpendicular anisotropy of Co22Pd78. These samples are field cooled along the out-of-plane direction and hysteresis loops are measured along both the out-of-plane and in-plane directions. It is observed that there is a transition temperature where the out-of-plane EB becomes greater than the in-plane EB. This behavior of EB is an evidence of the change in the spin structure of the given system, which is also revealed by the magnetization versus temperature measurements of the exchange biased and of the sole IrMn samples. It is found that with increasing temperature there is a spin structure transition in Ir25Mn75 (15nm) related to the 2Q to 3Q transition in the bulk, which is responsible for the increase in out-of-plane EB. A vertical shift in the hysteresis loop is also observed in these exchange biased samples at low temperatures (T<50 K).

Giant spin Hall angle from topological insulator BixSe(1 - x) thin films

Science.gov (United States)

Dc, Mahendra; Jamali, Mahdi; Chen, Junyang; Hickey, Danielle; Zhang, Delin; Zhao, Zhengyang; Li, Hongshi; Quarterman, Patrick; Lv, Yang; Mkhyon, Andre; Wang, Jian-Ping

Investigation on the spin-orbit torque (SOT) from large spin-orbit coupling materials has been attracting interest because of its low power switching of the magnetization and ultra-fast driving of the domain wall motion that can be used in future spin based memory and logic devices. We investigated SOT from topological insulator BixSe(1 - x) thin film in BixSe(1 - x) /CoFeB heterostructure by using the dc planar Hall method, where BixSe(1 - x) thin films were prepared by a unique industry-compatible deposition process. The angle dependent Hall resistance was measured in the presence of a rotating external in-plane magnetic field at bipolar currents. The spin Hall angle (SHA) from this BixSe(1 - x) thin film was found to be as large as 22.41, which is the largest ever reported at room temperature (RT). The giant SHA and large spin Hall conductivity (SHC) make this BixSe(1 - x) thin film a very strong candidate as an SOT generator in SOT based memory and logic devices.

Experimental Studies of Anode Sheath Phenomena in a Hall Thruster Discharge

International Nuclear Information System (INIS)

Dorf, L.; Raitses, Y.; Fisch, N.J.

2004-01-01

Both electron-repelling and electron-attracting anode sheaths in a Hall thruster were characterized by measuring the plasma potential with biased and emissive probes [L. Dorf, Y. Raitses, V. Semenov, and N.J. Fisch, Appl. Phys. Let. 84 (2004) 1070]. In the present work, two-dimensional structures of the plasma potential, electron temperature, and plasma density in the near-anode region of a Hall thruster with clean and dielectrically coated anodes are identified. Possible mechanisms of anode sheath formation in a Hall thruster are analyzed. The path for current closure to the anode appears to be the determining factor in the anode sheath formation process. The main conclusion of this work is that the anode sheath formation in Hall thrusters differs essentially from that in the other gas discharge devices, like a glow discharge or a hollow anode, because the Hall thruster utilizes long electron residence times to ionize rather than high neutral pressures

Engineering the quantum anomalous Hall effect in graphene with uniaxial strains

Energy Technology Data Exchange (ETDEWEB)

Diniz, G. S., E-mail: ginetom@gmail.com; Guassi, M. R. [Institute of Physics, University of Brasília, 70919-970 Brasília-DF (Brazil); Qu, F. [Institute of Physics, University of Brasília, 70919-970 Brasília-DF (Brazil); Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States)

2013-12-28

We theoretically investigate the manipulation of the quantum anomalous Hall effect (QAHE) in graphene by means of the uniaxial strain. The values of Chern number and Hall conductance demonstrate that the strained graphene in presence of Rashba spin-orbit coupling and exchange field, for vanishing intrinsic spin-orbit coupling, possesses non-trivial topological phase, which is robust against the direction and modulus of the strain. Besides, we also find that the interplay between Rashba and intrinsic spin-orbit couplings results in a topological phase transition in the strained graphene. Remarkably, as the strain strength is increased beyond approximately 7%, the critical parameters of the exchange field for triggering the quantum anomalous Hall phase transition show distinct behaviors—decrease (increase) for strains along zigzag (armchair) direction. Our findings open up a new platform for manipulation of the QAHE by an experimentally accessible strain deformation of the graphene structure, with promising application on novel quantum electronic devices with high efficiency.

Engineering the quantum anomalous Hall effect in graphene with uniaxial strains

International Nuclear Information System (INIS)

Diniz, G. S.; Guassi, M. R.; Qu, F.

2013-01-01

We theoretically investigate the manipulation of the quantum anomalous Hall effect (QAHE) in graphene by means of the uniaxial strain. The values of Chern number and Hall conductance demonstrate that the strained graphene in presence of Rashba spin-orbit coupling and exchange field, for vanishing intrinsic spin-orbit coupling, possesses non-trivial topological phase, which is robust against the direction and modulus of the strain. Besides, we also find that the interplay between Rashba and intrinsic spin-orbit couplings results in a topological phase transition in the strained graphene. Remarkably, as the strain strength is increased beyond approximately 7%, the critical parameters of the exchange field for triggering the quantum anomalous Hall phase transition show distinct behaviors—decrease (increase) for strains along zigzag (armchair) direction. Our findings open up a new platform for manipulation of the QAHE by an experimentally accessible strain deformation of the graphene structure, with promising application on novel quantum electronic devices with high efficiency

Presence of glassy state and large exchange bias in nanocrystalline BiFeO3

Science.gov (United States)

Srivastav, Simant Kumar; Johari, Anima; Patel, S. K. S.; Gajbhiye, N. S.

2017-11-01

We investigated the static and dynamic aspects of the magnetic properties for single phase nanocrystalline BiFeO3 with average crystallite size of 35 nm. The frequency dependence of the peak is observed in the real part of ac susceptibility χ‧ac vs T measurement and described well by the Vogel-Fulcher law as well as the power law. These analyses indicated the existence of cluster glass state with significant interaction among the spin clusters and results in cluster-glass like cooperative freezing at low temperature. The influence of temperature and magnetic field cooling on the exchange bias effect is investigated. A training effect is also observed. We have reported a significantly high ZFC & FC exchange bias of 200 Oe & 450 Oe at 300 K and 900 Oe & 2100 Oe at 5 K. The obtained results are interpreted in the framework of core-shell model, where the core of the BFO nanoparticles shows antiferromagnetic behavior and surrounded by CG-like ferromagnetic (FM) shell associated to uncompensated surface spins.

23rd August 2011 - Turkish Representatives of the Union of Chambers and Commodity Exchanges, E. Uluatam and S. Kologlu, visiting the LHC superconducting magnet test hall with Engineering Department Head R. Saban.

CERN Multimedia

Benoit Jeannet

2011-01-01

23rd August 2011 - Turkish Representatives of the Union of Chambers and Commodity Exchanges, E. Uluatam and S. Kologlu, visiting the LHC superconducting magnet test hall with Engineering Department Head R. Saban.

Direct imaging of thermally-activated grain-boundary diffusion in Cu/Co/IrMn/Pt exchange-bias structures using atom-probe tomography

Energy Technology Data Exchange (ETDEWEB)

Letellier, F.; Lardé, R.; Le Breton, J.-M., E-mail: jean-marie.lebreton@univ-rouen.fr [Groupe de Physique des Matériaux, UMR 6634 CNRS/Université et INSA de Rouen, F-76801 Saint Etienne du Rouvray (France); Lechevallier, L. [Groupe de Physique des Matériaux, UMR 6634 CNRS/Université et INSA de Rouen, F-76801 Saint Etienne du Rouvray (France); Département de GEII, Université de Cergy-Pontoise, F-95031 Cergy-Pontoise (France); Akmaldinov, K. [SPINTEC, Univ. Grenoble-Alpes/CNRS/INAC-CEA, F-38000 Grenoble (France); CROCUS Technology, F-38025 Grenoble (France); Auffret, S.; Dieny, B.; Baltz, V., E-mail: vincent.baltz@cea.fr [SPINTEC, Univ. Grenoble-Alpes/CNRS/INAC-CEA, F-38000 Grenoble (France)

2014-11-28

Magnetic devices are often subject to thermal processing steps, such as field cooling to set exchange bias and annealing to crystallize amorphous magnetic electrodes. These processing steps may result in interdiffusion and the subsequent deterioration of magnetic properties. In this study, we investigated thermally-activated diffusion in Cu/Co/IrMn/Pt exchange biased polycrystalline thin-film structures using atom probe tomography. Images taken after annealing at 400 °C for 60 min revealed Mn diffusion into Co grains at the Co/IrMn interface and along Pt grain boundaries for the IrMn/Pt stack, i.e., a Harrison type C regime. Annealing at 500 °C showed further Mn diffusion into Co grains. At the IrMn/Pt interface, annealing at 500 °C led to a type B behavior since Mn diffusion was detected both along Pt grain boundaries and also into Pt grains. The deterioration of the films' exchange bias properties upon annealing was correlated to the observed diffusion. In particular, the topmost Pt capping layer thickness turned out to be crucial since a faster deterioration of the exchange bias properties for thicker caps was observed. This is consistent with the idea that Pt acts as a getter for Mn, drawing Mn out of the IrMn layer.

Nanometer-size magnetic domains and coherent magnetization reversal in a giant exchange-bias system

DEFF Research Database (Denmark)

Dufour, C.; Fitzsimmons, M. R.; Borchers, J. A.

2011-01-01

The role of magnetic domains and domain walls in exchange bias has stimulated much contemporary deliberation. Here we present compelling evidence obtained with small-angle scattering of unpolarized- and polarized-neutron beams that magnetization reversal occurs via formation of 10-100s nm-sized m...... to that of structural defects at the seed-layer-superlattice interface....

The influence of oxidation process on exchange bias in egg-shaped FeO/Fe{sub 3}O{sub 4} core/shell nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Leszczyński, Błażej, E-mail: b.leszczynski@amu.edu.pl [NanoBioMedical Centre, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland); Faculty of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland); Hadjipanayis, George C.; El-Gendy, Ahmed A. [Department of Physics and Astronomy, University of Delaware, 217 Sharp Lab, Newark, DE 19716 (United States); Załęski, Karol [NanoBioMedical Centre, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland); Śniadecki, Zbigniew [Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań (Poland); Musiał, Andrzej [NanoBioMedical Centre, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland); Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań (Poland); Jarek, Marcin [NanoBioMedical Centre, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland); Jurga, Stefan [NanoBioMedical Centre, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland); Faculty of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland); Skumiel, Andrzej [Faculty of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland)

2016-10-15

Egg-shaped nanoparticles with a core–shell morphology were synthesized by thermal decomposition of an iron oleate complex. XRD and M(T) magnetic measurements confirmed the presence of FeO (wustite) and Fe{sub 3}O{sub 4} (magnetite) phases in the nanoparticles. Oxidation of FeO to Fe{sub 3}O{sub 4} was found to be the mechanism for the shell formation. As-made nanoparticles exhibited high values of exchange bias at 2 K. Oxidation led to decrease of exchange field from 2880 Oe (in as-made sample) to 330 Oe (in oxidized sample). At temperatures higher than the Néel temperature of FeO (200 K) there was no exchange bias. An interesting observation was made showing the exchange field to be higher than the coercive field at temperatures close to magnetite's Verwey transition. - Highlights: • Synthesis of monodispersed FeO nanoparticles is shown. • As-made FeO nanoparticle is antiferromagnetically ordered, when it is oxidized to Fe{sub 3}O{sub 4}, the FeO core becomes small and disordered. • Exchange bias in well-ordered and disordered core is different.

Exchange bias properties of 140 nm-sized dipolarly interacting circular dots with ultrafine IrMn and NiFe layers

Energy Technology Data Exchange (ETDEWEB)

Spizzo, F., E-mail: spizzo@fe.infn.it [Dipartimento di Fisica e Scienze della Terra and CNISM, Università di Ferrara, I-44122 Ferrara (Italy); Tamisari, M. [Dipartimento di Fisica e Scienze della Terra and CNISM, Università di Ferrara, I-44122 Ferrara (Italy); Dipartimento di Fisica e Geologia and CNISM, Università di Perugia, I-06123 Perugia (Italy); Chinni, F.; Bonfiglioli, E. [Dipartimento di Fisica e Scienze della Terra and CNISM, Università di Ferrara, I-44122 Ferrara (Italy); Gerardino, A. [Istituto di Fotonica e Nanotecnologie, CNR, I-00156 Roma (Italy); Barucca, G. [Dipartimento SIMAU, Università Politecnica delle Marche, I-60131 Ancona (Italy); Bisero, D.; Fin, S.; Del Bianco, L. [Dipartimento di Fisica e Scienze della Terra and CNISM, Università di Ferrara, I-44122 Ferrara (Italy)

2016-02-15

We studied the exchange bias effect in an array of IrMn(3 nm)/NiFe(3 nm) circular dots (size ~140 nm and center-to-center distance ~200 nm, as revealed by microscopy analyses), prepared on a large area (3×3 mm{sup 2}) by electron beam lithography and lift-off, using dc sputtering deposition. Hysteresis loops were measured by SQUID magnetometer at increasing values of temperature T (in the 5–300 K range) after cooling from 300 K down to 5 K in zero field (ZFC mode) and in a saturating magnetic field (FC mode). The exchange bias effect disappears above T~200 K and, at each temperature, the exchange field H{sub EX} measured in ZFC is substantially lower than the FC one. Micromagnetic calculations indicate that, at room temperature, each dot is in high-remanence ground state, but magnetic dipolar interactions establish a low-remanence configuration of the array as a whole. Hence, at low temperature, following the ZFC procedure, the exchange anisotropy in the dot array is averaged out, tending to zero. However, even the FC values of H{sub EX} and of the coercivity H{sub C} are definitely smaller compared to those measured in a reference continuous film with the same stack configuration (at T=5 K, H{sub EX}~90 Oe and H{sub C}~180 Oe in the dots and H{sub EX}~1270 Oe and H{sub C}~860 Oe in the film). Our explanation is based on the proven glassy magnetic nature of the ultrathin IrMn layer, implying the existence of magnetic correlations among the spins, culminating in a collective freezing below T~100 K. We propose, also by the light of micromagnetic simulations, that the small dot size imposes a spatial constraint on the magnetic correlation length among the IrMn spins so that, even at the lowest temperature, their thermal stability, especially at the dot border, is compromised. - Highlights: • Exchange bias in 140 nm-sized IrMn(3 nm)/NiFe(3 nm) dots much weaker than in a film. • Glassy magnetic nature of the IrMn phase and collective spin freezing at T<100 K �

Exchange bias properties of 140 nm-sized dipolarly interacting circular dots with ultrafine IrMn and NiFe layers

International Nuclear Information System (INIS)

Spizzo, F.; Tamisari, M.; Chinni, F.; Bonfiglioli, E.; Gerardino, A.; Barucca, G.; Bisero, D.; Fin, S.; Del Bianco, L.

2016-01-01

We studied the exchange bias effect in an array of IrMn(3 nm)/NiFe(3 nm) circular dots (size ~140 nm and center-to-center distance ~200 nm, as revealed by microscopy analyses), prepared on a large area (3×3 mm"2) by electron beam lithography and lift-off, using dc sputtering deposition. Hysteresis loops were measured by SQUID magnetometer at increasing values of temperature T (in the 5–300 K range) after cooling from 300 K down to 5 K in zero field (ZFC mode) and in a saturating magnetic field (FC mode). The exchange bias effect disappears above T~200 K and, at each temperature, the exchange field H_E_X measured in ZFC is substantially lower than the FC one. Micromagnetic calculations indicate that, at room temperature, each dot is in high-remanence ground state, but magnetic dipolar interactions establish a low-remanence configuration of the array as a whole. Hence, at low temperature, following the ZFC procedure, the exchange anisotropy in the dot array is averaged out, tending to zero. However, even the FC values of H_E_X and of the coercivity H_C are definitely smaller compared to those measured in a reference continuous film with the same stack configuration (at T=5 K, H_E_X~90 Oe and H_C~180 Oe in the dots and H_E_X~1270 Oe and H_C~860 Oe in the film). Our explanation is based on the proven glassy magnetic nature of the ultrathin IrMn layer, implying the existence of magnetic correlations among the spins, culminating in a collective freezing below T~100 K. We propose, also by the light of micromagnetic simulations, that the small dot size imposes a spatial constraint on the magnetic correlation length among the IrMn spins so that, even at the lowest temperature, their thermal stability, especially at the dot border, is compromised. - Highlights: • Exchange bias in 140 nm-sized IrMn(3 nm)/NiFe(3 nm) dots much weaker than in a film. • Glassy magnetic nature of the IrMn phase and collective spin freezing at T<100 K • Confinement of IrMn magnetic

Multi-analysis and modeling of asymmetry offset for Hall effect structures

Energy Technology Data Exchange (ETDEWEB)

Paun, Maria-Alexandra, E-mail: maria_paun2003@yahoo.com

2017-03-15

The topological (asymmetry) offset voltage of CMOS cross-like Hall cells is analyzed in this paper. In order to attain the stated objective, different approaches have been considered. Both circuit and three-dimensional models have been developed. Variation of the misalignment offset with the biasing current has been studied through physical and circuit models. The latter is a non-homogenous finite elements model, which relies on using parameterized resistances and current-controlled current sources, of CMOS Hall cells. The displacement offset for various asymmetries and the offset variation with the temperature were investigated through the circuit model developed. Various experimental results for the single and magnetic equivalent offset have also been provided. - Highlights: • In this paper both physical and circuit models have been proposed for the evaluation of Hall cells offset. • Variation of the misalignment offset with the biasing current has been studied. • The displacement offset for various asymmetries and the offset variation with the temperature were investigated. • Various experimental results for single and magnetic equivalent offset were provided. • The obtained simulation results are in accordance with the experimental data.

Spectroelectrochemical sensing: planar waveguides

Energy Technology Data Exchange (ETDEWEB)

Ross, Susan E.; Shi Yining; Seliskar, Carl J.; Heineman, William R

2003-09-30

The spectroelectrochemical sensor combines in a single device electrochemistry, spectroscopy, and selective partitioning into a film, giving improved selectivity for applications that involve complex samples. Sensing is based on the change in optical signal that accompanies electrochemical modulation of analyte that has partitioned into the film. Two classes of optical quality chemically-selective films based on two different host materials, namely, sol-gel processed silica and cross-linked poly(vinyl alcohol) have been developed. Films are typically 400-700 nm thick. Three types of sensor platforms are discussed: a multiple internal reflection (MIR) optic consisting of a bilayer of an indium tin oxide (ITO) optically transparent electrode deposited on a 1-mm thick glass substrate, a planar waveguide in which a potassium ion-exchanged BK7 glass waveguide (5-9 {mu}m thick) was over-coated with a thin film of ITO, and a planar waveguide in which a potassium ion-exchanged BK7 glass waveguide channel was formed and a pair of electrodes deposited along side the channel. These sensors were evaluated with ferrocyanide and a selective film of PDMDAAC-SiO{sub 2}, where PDMDAAC=poly(dimethyl diallylammonium chloride)

Spectroelectrochemical sensing: planar waveguides

International Nuclear Information System (INIS)

Ross, Susan E.; Shi Yining; Seliskar, Carl J.; Heineman, William R.

2003-01-01

The spectroelectrochemical sensor combines in a single device electrochemistry, spectroscopy, and selective partitioning into a film, giving improved selectivity for applications that involve complex samples. Sensing is based on the change in optical signal that accompanies electrochemical modulation of analyte that has partitioned into the film. Two classes of optical quality chemically-selective films based on two different host materials, namely, sol-gel processed silica and cross-linked poly(vinyl alcohol) have been developed. Films are typically 400-700 nm thick. Three types of sensor platforms are discussed: a multiple internal reflection (MIR) optic consisting of a bilayer of an indium tin oxide (ITO) optically transparent electrode deposited on a 1-mm thick glass substrate, a planar waveguide in which a potassium ion-exchanged BK7 glass waveguide (5-9 μm thick) was over-coated with a thin film of ITO, and a planar waveguide in which a potassium ion-exchanged BK7 glass waveguide channel was formed and a pair of electrodes deposited along side the channel. These sensors were evaluated with ferrocyanide and a selective film of PDMDAAC-SiO 2 , where PDMDAAC=poly(dimethyl diallylammonium chloride)

Exchange bias in antiferromagnetic coupled Fe3O4+Cr2O3 nanocomposites

International Nuclear Information System (INIS)

Liu, X H; Cui, W B; Lv, X K; Liu, W; Zhao, X G; Li, D; Zhang, Z D

2008-01-01

Exchange bias (EB) and magnetic properties of ferrimagnetic (FI) Fe 3 O 4 and antiferromagnetic (AFM) Cr 2 O 3 nanocomposites prepared by mechanical alloying have been investigated. A large EB field of 2.2 kOe at 10 K is observed in one of the nanocomposites, which may be related to the uncompensated and pinned AFM spins at the interface between FI and AFM phases of the nanocomposites. The EB field varies with the strength of cooling field and the content of the Cr 2 O 3 phase, the phenomena observed are explained in terms of interfacial exchange interaction between the two phases

Planar edgeless silicon detectors for the TOTEM experiment

CERN Document Server

Ruggiero, G; Noschis, E

2007-01-01

Recently the first prototype of microstrip edgeless silicon detector for the TOTEM experiment has been successfully produced and tested. This detector is fabricated with standard planar technology, reach sensitivity 50 μm from the cut edge and can operate with high bias at room temperature. These almost edgeless detectors employ a newly conceived terminating structure, which, although being reduced with respect to the conventional ones, still controls the electric field at the device periphery and prevents leakage current breakdown for high bias. Detectors with the new terminating structure are being produced now and will be installed at LHC in the Roman Pots, a special beam insertion, to allow the TOTEM experiment to detect leading protons at 10 σ from the beam. This paper will describe this new terminating structure for planar silicon detectors, how it applies to big size devices and the experimental tests proving their functionality.

2D massless QED Hall half-integer conductivity and graphene

International Nuclear Information System (INIS)

Martínez, A Pérez; Querts, E Rodriguez; Rojas, H Pérez; Gaitan, R; Rodriguez-Romo, S

2011-01-01

Starting from the photon self-energy tensor in a magnetized medium, the 3D complete antisymmetric form of the conductivity tensor is found in the static limit of a fermion system C-non-invariant under fermion–antifermion exchange. The massless relativistic 2D fermion limit in QED is derived by using the compactification along the dimension parallel to the magnetic field. In the static limit and at zero temperature, the main features of the quantum Hall effect (QHE) are obtained: the half-integer QHE and the minimum value proportional to e 2 /h for the Hall conductivity. For typical values of graphene the plateaus of the Hall conductivity are also reproduced. (paper)

Clarifying roughness and atomic diffusion contributions to the interface broadening in exchange-biased NiFe/FeMn/NiFe heterostructures

Energy Technology Data Exchange (ETDEWEB)

Nascimento, V.P., E-mail: valberpn@yahoo.com.br [Departamento de Física, Universidade Federal do Espírito Santo, 29075-910 Vitória (Brazil); Merino, I.L.C.; Passamani, E.C. [Departamento de Física, Universidade Federal do Espírito Santo, 29075-910 Vitória (Brazil); Alayo, W. [Departamento de Física, Universidade de Pelotas, 96010-610 Pelotas (Brazil); Tafur, M. [Instituto de Ciências Exatas, Universidade Federal de Itajubá, 37500-903 Itajubá (Brazil); Pelegrini, F. [Instituto de Física, Universidade Federal de Goiás, 74001-970 Goiânia (Brazil); Magalhães-Paniago, R. [Universidade Federal de Minas Gerais, Belo Horizonte (Brazil); Alvarenga, A.D. [Instituto Nacional de Metrologia, 25250-020 Xerém (Brazil); Saitovitch, E.B. [Coordenação de Física Experimental e Baixas Energias, Centro Brasileiro de Pesquisas Físicas, 22290-180 Rio de Janeiro (Brazil)

2013-09-02

NiFe(30 nm)/FeMn(13 nm)/NiFe(10 nm) heterostructures prepared by magnetron sputtering at different argon working pressures (0.27, 0.67 and 1.33 Pa) were systematically investigated by using specular and off-specular diffuse X-ray scattering experiments, combined with ferromagnetic resonance technique, in order to distinguish the contribution from roughness and atomic diffusion to the total structural disorder at NiFe/FeMn interfaces. It was shown that an increase in the working gas pressure from 0.27 to 1.33 Pa causes an enhancement of the atomic diffusion at the NiFe/FeMn interfaces, an effect more pronounced at the top FeMn/NiFe interface. In particular, this atomic diffusion provokes a formation of non-uniform magnetic dead-layers at the NiFe/FeMn interfaces (NiFeMn regions with paramagnetic or weak antiferromagnetic properties); that are responsible for the substantial reduction of the exchange bias field in the NiFe/FeMn system. Thus, this work generically helps to understand the discrepancies found in the literature regarding the influence of the interface broadening on the exchange bias properties (e.g., exchange bias field) of the NiFe/FeMn system. - Highlights: • Roughness and atomic diffusion contributions to the interface broadening • Clarification of the exchange bias field dependence on the interface disorder • Ferromagnetic, paramagnetic and antiferromagnetic phases at the magnetic interface • Magnetic dead layers formed by increasing the argon work pressure • Atomic diffusion in heterostructures prepared at higher argon pressure.

Anode Fall Formation in a Hall Thruster

International Nuclear Information System (INIS)

Dorf, Leonid A.; Raitses, Yevgeny F.; Smirnov, Artem N.; Fisch, Nathaniel J.

2004-01-01

As was reported in our previous work, accurate, nondisturbing near-anode measurements of the plasma density, electron temperature, and plasma potential performed with biased and emissive probes allowed the first experimental identification of both electron-repelling (negative anode fall) and electron-attracting (positive anode fall) anode sheaths in Hall thrusters. An interesting new phenomenon revealed by the probe measurements is that the anode fall changes from positive to negative upon removal of the dielectric coating, which appears on the anode surface during the course of Hall thruster operation. As reported in the present work, energy dispersion spectroscopy analysis of the chemical composition of the anode dielectric coating indicates that the coating layer consists essentially of an oxide of the anode material (stainless steel). However, it is still unclear how oxygen gets into the thruster channel. Most importantly, possible mechanisms of anode fall formation in a Hall thruster with a clean and a coated anodes are analyzed in this work; practical implication of understanding the general structure of the electron-attracting anode sheath in the case of a coated anode is also discussed

Bias correction in the realized stochastic volatility model for daily volatility on the Tokyo Stock Exchange

Science.gov (United States)

Takaishi, Tetsuya

2018-06-01

The realized stochastic volatility model has been introduced to estimate more accurate volatility by using both daily returns and realized volatility. The main advantage of the model is that no special bias-correction factor for the realized volatility is required a priori. Instead, the model introduces a bias-correction parameter responsible for the bias hidden in realized volatility. We empirically investigate the bias-correction parameter for realized volatilities calculated at various sampling frequencies for six stocks on the Tokyo Stock Exchange, and then show that the dynamic behavior of the bias-correction parameter as a function of sampling frequency is qualitatively similar to that of the Hansen-Lunde bias-correction factor although their values are substantially different. Under the stochastic diffusion assumption of the return dynamics, we investigate the accuracy of estimated volatilities by examining the standardized returns. We find that while the moments of the standardized returns from low-frequency realized volatilities are consistent with the expectation from the Gaussian variables, the deviation from the expectation becomes considerably large at high frequencies. This indicates that the realized stochastic volatility model itself cannot completely remove bias at high frequencies.

Prediction of a quantum anomalous Hall state in Co-decorated silicene

KAUST Repository

Kaloni, Thaneshwor P.

2014-01-09

Based on first-principles calculations, we demonstrate that Co-decorated silicene can host a quantum anomalous Hall state. The exchange field induced by the Co atoms combined with the strong spin-orbit coupling of the silicene opens a nontrivial band gap at the K point. As compared to other transition metals, Co-decorated silicene is unique in this respect, since usually hybridization and spin-polarization induced in the silicene suppress a quantum anomalous Hall state.

Prediction of a quantum anomalous Hall state in Co-decorated silicene

KAUST Repository

Kaloni, Thaneshwor P.; Schwingenschlö gl, Udo; Singh, Nirpendra

2014-01-01

Based on first-principles calculations, we demonstrate that Co-decorated silicene can host a quantum anomalous Hall state. The exchange field induced by the Co atoms combined with the strong spin-orbit coupling of the silicene opens a nontrivial band gap at the K point. As compared to other transition metals, Co-decorated silicene is unique in this respect, since usually hybridization and spin-polarization induced in the silicene suppress a quantum anomalous Hall state.

Unravelling the tunable exchange bias-like effect in magnetostatically-coupled two dimensional hybrid (hard/soft) composites

International Nuclear Information System (INIS)

Hierro-Rodriguez, A; Teixeira, J M; Rodriguez-Rodriguez, G; Rubio, H; Vélez, M; Álvarez-Prado, L M; Martín, J I; Alameda, J M

2015-01-01

Hybrid 2D hard-soft composites have been fabricated by combining soft (Co 73 Si 27 ) and hard (NdCo 5 ) magnetic materials with in-plane and out-of-plane magnetic anisotropies, respectively. They have been microstructured in a square lattice of CoSi anti-dots with NdCo dots within the holes. The magnetic properties of the dots allow us to introduce a magnetostatic stray field that can be controlled in direction and sense by their last saturating magnetic field. The magnetostatic interactions between dot and anti-dot layers induce a completely tunable exchange bias-like shift in the system’s hysteresis loops. Two different regimes for this shift are present depending on the lattice parameter of the microstructures. For large parameters, dipolar magnetostatic decay is observed, while for the smaller one, the interaction between the adjacent anti-dot’s characteristic closure domain structures enhances the exchange bias-like effect as clarified by micromagnetic simulations. (paper)

Nontrivial transition of transmission in a highly open quantum point contact in the quantum Hall regime

Science.gov (United States)

Hong, Changki; Park, Jinhong; Chung, Yunchul; Choi, Hyungkook; Umansky, Vladimir

2017-11-01

Transmission through a quantum point contact (QPC) in the quantum Hall regime usually exhibits multiple resonances as a function of gate voltage and high nonlinearity in bias. Such behavior is unpredictable and changes sample by sample. Here, we report the observation of a sharp transition of the transmission through an open QPC at finite bias, which was observed consistently for all the tested QPCs. It is found that the bias dependence of the transition can be fitted to the Fermi-Dirac distribution function through universal scaling. The fitted temperature matches quite nicely to the electron temperature measured via shot-noise thermometry. While the origin of the transition is unclear, we propose a phenomenological model based on our experimental results that may help to understand such a sharp transition. Similar transitions are observed in the fractional quantum Hall regime, and it is found that the temperature of the system can be measured by rescaling the quasiparticle energy with the effective charge (e*=e /3 ). We believe that the observed phenomena can be exploited as a tool for measuring the electron temperature of the system and for studying the quasiparticle charges of the fractional quantum Hall states.

Observation of magnetization and exchange bias reversals in NdFe{sub 0.5}Cr{sub 0.5}O{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Sharannia, M.P.; De, Santanu [Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India); Singh, Ripandeep; Das, A. [Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Nirmala, R. [Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India); Santhosh, P.N., E-mail: santhosh@iitm.ac.in [Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India)

2017-05-15

Polycrystalline NdFe{sub 0.5}Cr{sub 0.5}O{sub 3} has orthorhombic structure with Pnma space group and is magnetically ordered at room temperature as confirmed by neutron diffraction. The magnetic structure involves C{sub x}G{sub y}F{sub z} type ordering of Fe{sup 3+}/Cr{sup 3+} ions. NdFe{sub 0.5}Cr{sub 0.5}O{sub 3} shows magnetization reversal and sign reversal of exchange bias at ~16 K. Nd{sup 3+} moments that get induced by the internal field of |Fe+Cr| sublattice couple antiferromagnetically with the ferromagnetic component of |Fe+Cr| sublattice. Nd{sup 3+} moments overcome the |Fe+Cr| moments at ~16 K below which the material shows negative magnetization and positive exchange bias. - Highlights: • Neutron diffraction confirms magnetic ordering at 300 K in NdFe{sub 0.5}Cr{sub 0.5}O{sub 3}. • Magnetic structure involves C{sub x}G{sub y}F{sub z} type ordering of Fe{sup 3+}/Cr{sup 3+} ions. • Nd{sup 3+} moments couple antiferromagnetically with |Fe+Cr| ferromagnetic moments. • Shows magnetization reversal and exchange bias reversal.

Effective field theory and tunneling currents in the fractional quantum Hall effect

International Nuclear Information System (INIS)

Bieri, Samuel; Fröhlich, Jürg

2012-01-01

We review the construction of a low-energy effective field theory and its state space for “abelian” quantum Hall fluids. The scaling limit of the incompressible fluid is described by a Chern–Simons theory in 2+1 dimensions on a manifold with boundary. In such a field theory, gauge invariance implies the presence of anomalous chiral modes localized on the edge of the sample. We assume a simple boundary structure, i.e., the absence of a reconstructed edge. For the bulk, we consider a multiply connected planar geometry. We study tunneling processes between two boundary components of the fluid and calculate the tunneling current to lowest order in perturbation theory as a function of dc bias voltage. Particular attention is paid to the special cases when the edge modes propagate at the same speed, and when they exhibit two significantly distinct propagation speeds. We distinguish between two “geometries” of interference contours corresponding to the (electronic) Fabry–Perot and Mach–Zehnder interferometers, respectively. We find that the interference term in the current is absent when exactly one hole in the fluid corresponding to one of the two edge components involved in the tunneling processes lies inside the interference contour (i.e., in the case of a Mach–Zehnder interferometer). We analyze the dependence of the tunneling current on the state of the quantum Hall fluid and on the external magnetic flux through the sample. - Highlights: ► We review and extend on the field theoretic construction of the FQHE. ► We calculate tunneling currents between different edge components of a sample. ► We find an absence of interference terms in the currents for some sample geometries. ► No observable Aharonov–Bohm effect is found as the magnetic field is varied. ► Deformation of the edge leads to observable Aharonov–Bohm effect in the currents.

Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies.

Science.gov (United States)

Faraz, Tahsin; Knoops, Harm C M; Verheijen, Marcel A; van Helvoirt, Cristian A A; Karwal, Saurabh; Sharma, Akhil; Beladiya, Vivek; Szeghalmi, Adriana; Hausmann, Dennis M; Henri, Jon; Creatore, Mariadriana; Kessels, Wilhelmus M M

2018-04-18

Oxide and nitride thin-films of Ti, Hf, and Si serve numerous applications owing to the diverse range of their material properties. It is therefore imperative to have proper control over these properties during materials processing. Ion-surface interactions during plasma processing techniques can influence the properties of a growing film. In this work, we investigated the effects of controlling ion characteristics (energy, dose) on the properties of the aforementioned materials during plasma-enhanced atomic layer deposition (PEALD) on planar and 3D substrate topographies. We used a 200 mm remote PEALD system equipped with substrate biasing to control the energy and dose of ions by varying the magnitude and duration of the applied bias, respectively, during plasma exposure. Implementing substrate biasing in these forms enhanced PEALD process capability by providing two additional parameters for tuning a wide range of material properties. Below the regimes of ion-induced degradation, enhancing ion energies with substrate biasing during PEALD increased the refractive index and mass density of TiO x and HfO x and enabled control over their crystalline properties. PEALD of these oxides with substrate biasing at 150 °C led to the formation of crystalline material at the low temperature, which would otherwise yield amorphous films for deposition without biasing. Enhanced ion energies drastically reduced the resistivity of conductive TiN x and HfN x films. Furthermore, biasing during PEALD enabled the residual stress of these materials to be altered from tensile to compressive. The properties of SiO x were slightly improved whereas those of SiN x were degraded as a function of substrate biasing. PEALD on 3D trench nanostructures with biasing induced differing film properties at different regions of the 3D substrate. On the basis of the results presented herein, prospects afforded by the implementation of this technique during PEALD, such as enabling new routes for

Oscillatory exchange bias and training effects in nanocrystalline Pr0.5Ca0.5MnO3

Directory of Open Access Journals (Sweden)

S. Narayana Jammalamadaka

2012-03-01

Full Text Available We report on exchange bias effects in 10 nm particles of Pr0.5Ca0.5MnO3 which appear as a result of competing interactions between the ferromagnetic (FM/anti-ferromagnetic (AFM phases. The fascinating new observation is the demonstration of the temperature dependence of oscillatory exchange bias (OEB and is tunable as a function of cooling field strength below the SG phase, may be attributable to the presence of charge/spin density wave (CDW/SDW in the AFM core of PCMO10. The pronounced training effect is noticed at 5 K from the variation of the EB field as a function of number of field cycles (n upon the field cooling (FC process. For n > 1, power-law behavior describes the experimental data well; however, the breakdown of spin configuration model is noticed at n ≥ 1.

Training effect of exchange bias in La0.67Sr0.33MnO3/SrTiO3 superlattice

International Nuclear Information System (INIS)

Zhu, S J; Zhao, B R; Xu, B; Zhu, B Y; Cao, L X; Qiu, X G

2008-01-01

The training effect of exchange bias has been observed in the superlattice consisting of ferromagnetic La 0.67 Sr 0.33 MnO 3 and non-magnetic SrTiO 3 layers. The exchange field shows an approximately power-law decrease with an increase in the number of hysteresis loop measurements. The vertical shift of the hysteresis loop reveals the existence of the net uncompensated spins at the interface between the La 0.67 Sr 0.33 MnO 3 and the SrTiO 3 layers. The irreversibility of magnetization measurements gives clear evidence that the interfacial spins will be frozen at low temperature. It is suggested that the frozen uncompensated spins at the interface are responsible for the shift of the hysteresis loop and the training effect of exchange bias might be a result of the relaxation process of those interfacial spins when the superlattice is consecutively field-cycled.

Topological phase transition in anisotropic square-octagon lattice with spin-orbit coupling and exchange field

Science.gov (United States)

Yang, Yuan; Yang, Jian; Li, Xiaobing; Zhao, Yue

2018-03-01

We investigate the topological phase transitions in an anisotropic square-octagon lattice in the presence of spin-orbit coupling and exchange field. On the basis of the Chern number and spin Chern number, we find a number of topologically distinct phases with tuning the exchange field, including time-reversal-symmetry-broken quantum spin Hall phases, quantum anomalous Hall phases and a topologically trivial phase. Particularly, we observe a coexistent state of both the quantum spin Hall effect and quantum anomalous Hall effect. Besides, by adjusting the exchange filed, we find the phase transition from time-reversal-symmetry-broken quantum spin Hall phase to spin-imbalanced and spin-polarized quantum anomalous Hall phases, providing an opportunity for quantum spin manipulation. The bulk band gap closes when topological phase transitions occur between different topological phases. Furthermore, the energy and spin spectra of the edge states corresponding to different topological phases are consistent with the topological characterization based on the Chern and spin Chern numbers.

Asymmetrically shaped hysteresis loop in exchange-biased FeNi/FeMn film

International Nuclear Information System (INIS)

Gnatchenko, S.L.; Merenkov, D.N.; Bludov, A.N.; Pishko, V.V.; Shakhayeva, Yu.A.; Baran, M.; Szymczak, R.; Novosad, V.A.

2006-01-01

The magnetization reversal of the bilayer polycrystalline FeNi(50 A)/FeMn(50 A) film sputtered in a magnetic field has been studied by magnetic and magneto-optical techniques. The external magnetic fields were applied along the easy or hard magnetization axis of the ferromagnetic permalloy layer. The asymmetry of hysteresis loop has been found. Appreciable asymmetry and the exchange bias were observed only in the field applied along the easy axis. The specific features of magnetization reversal were explained within the phenomenological model that involves high-order exchange anisotropy and misalignment of the easy axes of the antiferromagnetic and ferromagnetic layers. It has been shown that the film can exist in one of three equilibrium magnetic states in the field applied along the easy axis. The transitions between these states occur as first-order phase transitions. The observed hysteresis loop asymmetry is related to the existence of the metastable state

Exchange bias training effect in phase separated polycrystalline Sm_0_._1Ca_0_._7Sr_0_._2MnO_3

International Nuclear Information System (INIS)

Markovich, V.; Fita, I.; Wisniewski, A.; Puzniak, R.; Martin, C.; Jung, G.; Gorodetsky, G.

2016-01-01

Magnetic properties of antiferromagnetic (AFM) electron doped manganite Sm_0_._1Ca_0_._7Sr_0_._2MnO_3 have been investigated, focusing mainly on the exchange bias (EB) effect and associated training effect. The studied compound exhibits the ground state with heterogeneous spin configuration, consisting of the C-type antiferromagnetic phase with the Néel temperature T_N_-_C ≈ 120 K, the G-AFM phase with the Néel temperature T_N_-_G ≈ 60 K, and ferromagnetic-like phase with a very weak spontaneous magnetic moment. Measurements of hysteresis loops have shown that the exchange bias field monotonously decreases with increasing temperature and vanishes above 40 K, while the coercivity disappears only above 70 K. The temperature variation of the exchange bias field has been successfully described by an exponential decay form. The stability of EB has been evaluated in the studies of the training effect, which has been discussed in the frame of the spin relaxation model, elucidating the important role of the AFM domain rearrangement at the interface. The complex phase separation and possible contributions from different interfaces between coexisting magnetic phases to the EB effect have also been discussed. - Highlights: • Sm_0_._1Ca_0_._7Sr_0_._2MnO_3 exhibits exchange bias (EB) effect at low temperatures T < 40 K. • The EB effect is associated with the phase separation and the presence of FM clusters as well as the G- and C-type AFM phases. • The training effect (TE) has been discussed in the frame of the spin relaxation model. • The TE is relatively small, indicating that AFM moment configuration is almost frozen during the magnetization reversal.

Shot-noise evidence of fractional quasiparticle creation in a local fractional quantum Hall state.

Science.gov (United States)

Hashisaka, Masayuki; Ota, Tomoaki; Muraki, Koji; Fujisawa, Toshimasa

2015-02-06

We experimentally identify fractional quasiparticle creation in a tunneling process through a local fractional quantum Hall (FQH) state. The local FQH state is prepared in a low-density region near a quantum point contact in an integer quantum Hall (IQH) system. Shot-noise measurements reveal a clear transition from elementary-charge tunneling at low bias to fractional-charge tunneling at high bias. The fractional shot noise is proportional to T(1)(1-T(1)) over a wide range of T(1), where T(1) is the transmission probability of the IQH edge channel. This binomial distribution indicates that fractional quasiparticles emerge from the IQH state to be transmitted through the local FQH state. The study of this tunneling process enables us to elucidate the dynamics of Laughlin quasiparticles in FQH systems.

Exchange bias behavior in Ni{sub 50.0}Mn{sub 35.5} In{sub 14.5} ribbons annealed at different temperatures

Energy Technology Data Exchange (ETDEWEB)

Sanchez, T. [Dept. de Fisica, Universidad de Oviedo, Calvo Sotelo s/n, 33007 Oviedo (Spain); Sato Turtelli, R.; Groessinger, R. [Institut fur Festkoerperphysik, Technische Universitaet Wien, Wiedner Hauptstr. 8-10, 1040 Vienna (Austria); Sanchez, M.L.; Santos, J.D.; Rosa, W.O.; Prida, V.M. [Dept. de Fisica, Universidad de Oviedo, Calvo Sotelo s/n, 33007 Oviedo (Spain); Escoda, Ll.; Sunol, J.J. [Campus de Montilivi, Universidad de Girona, edifici PII, Lluis Santalo s/n. 17003 Girona (Spain); Koledov, V. [Kotelnikov Institute of Radio Engineering and Electronics, RAS, Moscow 125009 (Russian Federation); Hernando, B., E-mail: grande@uniovi.es [Dept. de Fisica, Universidad de Oviedo, Calvo Sotelo s/n, 33007 Oviedo (Spain)

2012-10-15

Heusler alloy Ni{sub 50.0}Mn{sub 35.5}In{sub 14.5} ribbons were prepared by melt-spinning technique. Several short time annealings were carried out in order to enhance the exchange bias effect in this alloy ribbon. The magnetic transition temperature increases with the annealing, compared to the as-spun sample, however no significant differences in respective Curie temperatures were observed for austenite and martensite phases in such annealed samples. Exchange bias effect is observed at low temperatures for all samples and practically vanishes at 60 K for the as-spun sample, whereas for the annealed ribbons it vanishes at 100 K.

Positive and negative exchange bias effects from magnetization reversal in Ho{sup 3+} doped YFe{sub 0.5}Cr{sub 0.5}O{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Shi, L.R., E-mail: shiliran1127@126.com [College of Physics and Electrical Engineering, Anyang Normal University, Anyang 455000 (China); Wei, C.X.; Wang, Z.; Ju, L.; Xu, T.S.; Li, T.X.; Yan, X.W. [College of Physics and Electrical Engineering, Anyang Normal University, Anyang 455000 (China); Xia, Z.C. [Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China)

2017-07-01

Highlights: • The dual magnetization reversal is observed in Y{sub 1−x}Ho{sub x}Fe{sub 0.5}Cr{sub 0.5}O{sub 3}. • The EB field transforms from negative to positive and then to negative. • A large exchange bias effect induced by Ho{sup 3+} doping is obtained in Y{sub 1−x}Ho{sub x}Fe{sub 0.5}Cr{sub 0.5}O{sub 3}. - Abstract: The polycrystalline ceramics of Y{sub 1−x}Ho{sub x}Fe{sub 0.5}Cr{sub 0.5}O{sub 3} (x = 0, 0.05 and 0.1) are synthesized by a sol-gel method. The magnetization reversal and exchange bias effect are investigated in single phase bulk Y{sub 1−x}Ho{sub x}Fe{sub 0.5}Cr{sub 0.5}O{sub 3}. Magnetic Ho{sup 3+} ion as a dopant is introduced into the system to confirm the influence of A-site ion on the magnetic interactions. The dual reversal of exchange bias field for x = 0.05 is observed, and its characteristic temperatures are corresponding to the compensation temperatures of magnetization reversal. The exchange bias field of x = 0.1 is found to be ∼10.03 kOe at 4 K, revealing a large value compared with that of x = 0. A schematic diagram based on the competition between the single ion anisotropy and Dzyaloshinsky-Moriya interaction, and the antiparallel coupling between the Ho{sup 3+} moments and the canted Cr{sup 3+}/Fe{sup 3+} moments, is used to understand the dual reversal phenomenon of magnetization and exchange bias effect.

Exchange bias variations of the seed and top NiFe layers in NiFe/FeMn/NiFe trilayer as a function of seed layer thickness

International Nuclear Information System (INIS)

Sankaranarayanan, V.K.; Yoon, S.M.; Kim, C.G.; Kim, C.O.

2005-01-01

Development of exchange bias at the seed and top NiFe layers in the NiFe (t nm)/FeMn(10 nm)/NiFe(5 nm) trilayer structure is investigated as a function of seed layer thickness, in the range of 2-20 nm. The seed NiFe layer shows maximum exchange bias at 4 nm seed layer thickness. The bias shows inverse thickness dependence with increasing thickness. The top NiFe layer on the other hand shows only half the bias of the seed layer which is retained even after the sharp fall in seed layer bias. The much smaller bias for the top NiFe layer is related to the difference in crystalline texture and spin orientations at the top FeMn/NiFe interface, in comparison to the bottom NiFe/FeMn interface which grows on a saturated NiFe layer with (1 1 1) orientation

Magnetic and exchange bias properties of YCo thin films and IrMn/YCo bilayers

Science.gov (United States)

Venkat Narayana, M.; Manivel Raja, M.; Jammalamadaka, S. Narayana

2018-02-01

We report on the structural and magnetic properties of YCo thin films and IrMn/YCo bilayers. X-ray diffraction infer that all the films are amorphous in nature. Magnetization versus magnetic field measurements reveal room temperature soft ferromagnetism in all the YCo films. Thin films which were grown at 100 W sputter power with growth rates of 0.677, 0.694 and 0.711 Å/sec show better morphology and composition than 50 W (0.333, 0.444 and 0.277 Å/sec) grown films. Perpendicular exchange bias in as deposited bilayers is evident for IrMn/YCo bilayers. Exchange bias (EB) decreases in case of in plane measurements and enhances for out of plane measurements after perpendicular field annealing. EB is more in case of out of plane direction due to large perpendicular anisotropy in comparison with in plane direction. Above the critical thickness, EB variation is explained on the basis of random field model in the Heisenberg regime, which has been proposed by Malozemoff. Indeed there exists an inverse relationship between EB and IrMn layer thickness. Evidenced vertical shift apart from the horizontal shift for magnetization loops is attributed to frozen magnetic moments in one of the layers at the interface. Present results would prove to be helpful in spintronic device applications.

Freezing field dependence of the exchange bias in uniaxial FeF sub 2 -CoPt heterosystems with perpendicular anisotropy

CERN Document Server

Kagerer, B; Kleemann, W

2000-01-01

The exchange bias effect is measured for the first time in FeF sub 2 -CoPt heterosystems with perpendicular anisotropy. The exchange field exhibits a strong dependence on the axial freezing field. This behavior is explained in terms of the microscopic spin structure at the interface, which is established on cooling to below T sub N. We calculate the dependence of the spin structure on the freezing field within the framework of an Ising model. It takes into account the Zeeman energy as well as an antiferromagnetic exchange coupling between the adjacent layers at the interface.

Observation of the Zero Hall Plateau in a Quantum Anomalous Hall Insulator

Energy Technology Data Exchange (ETDEWEB)

Feng, Yang; Feng, Xiao; Ou, Yunbo; Wang, Jing; Liu, Chang; Zhang, Liguo; Zhao, Dongyang; Jiang, Gaoyuan; Zhang, Shou-Cheng; He, Ke; Ma, Xucun; Xue, Qi-Kun; Wang, Yayu

2015-09-16

We report experimental investigations on the quantum phase transition between the two opposite Hall plateaus of a quantum anomalous Hall insulator. We observe a well-defined plateau with zero Hall conductivity over a range of magnetic field around coercivity when the magnetization reverses. The features of the zero Hall plateau are shown to be closely related to that of the quantum anomalous Hall effect, but its temperature evolution exhibits a significant difference from the network model for a conventional quantum Hall plateau transition. We propose that the chiral edge states residing at the magnetic domain boundaries, which are unique to a quantum anomalous Hall insulator, are responsible for the novel features of the zero Hall plateau.

Diagnostic Setup for Characterization of Near-Anode Processes in Hall Thrusters

International Nuclear Information System (INIS)

Dorf, L.; Raitses, Y.; Fisch, N.J.

2003-01-01

A diagnostic setup for characterization of near-anode processes in Hall-current plasma thrusters consisting of biased and emissive electrostatic probes, high-precision positioning system and low-noise electronic circuitry was developed and tested. Experimental results show that radial probe insertion does not cause perturbations to the discharge and therefore can be used for accurate near-anode measurements

Inversion of exchange bias and complex magnetization reversal in full-nitride epitaxial γ′-Fe{sub 4}N/CoN bilayers

Energy Technology Data Exchange (ETDEWEB)

Li, Z.R. [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072 (China); Mi, W.B., E-mail: miwenbo@tju.edu.cn [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072 (China); Wang, X.C. [Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, China (China); Bai, H.L. [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072 (China)

2015-04-01

Exchange bias has been observed in the full-nitride epitaxial γ′-Fe{sub 4}N/CoN bilayers. With the increase of temperature, the sign of exchange bias (EB) is inverse, which is independent on the cooling field and training effect. This novel behavior appears in the bilayers with different CoN and γ′-Fe{sub 4}N thicknesses. The inversion of EB sign not only occurs at low temperatures, but also takes place even at 200 K for the 10 and 12 nm thick CoN layer. With the decreased γ′-Fe{sub 4}N layer thickness, the inversion temperature of EB sign shows a roughly increased tendency. For the bilayer with a 4 nm-thick γ′-Fe{sub 4}N, the interfacial magnetization reversal presents a complex trend, which is considered as the combined actions of the disordered ferromagnetic spins and various competed magnetic structures. This new manifestation of EB has been discussed in terms of the complicated interfacial spin structures and frustration effects due to the competition between the ferromagnetic and antiferromagnetic exchange interactions at the interface. - Highlights: • Exchange bias (EB) sign reverses from negative to positive with increasing temperature in epitaxial γ′-Fe{sub 4}N/CoN bilayers. • The positive EB can be attributed to the antiferromagnetic interfacial coupling and frustrated interfacial spin structures. • The EB transition temperature is not monotonically dependent on CoN thickness t{sub CoN}. • For a 4-nm γ′-Fe{sub 4}N, the unusual hysteresis loops are observed.

Tunneling between edge states in a quantum spin Hall system.

Science.gov (United States)

Ström, Anders; Johannesson, Henrik

2009-03-06

We analyze a quantum spin Hall device with a point contact connecting two of its edges. The contact supports a net spin tunneling current that can be probed experimentally via a two-terminal resistance measurement. We find that the low-bias tunneling current and the differential conductance exhibit scaling with voltage and temperature that depend nonlinearly on the strength of the electron-electron interaction.

The rotational hysteresis losses in thin films with unidirectional magnetic anisotropy

Science.gov (United States)

Mucha, J. M.; Vatskichev, L.; Vatskicheva, M.

1992-03-01

Using the Planar Hall Effect (PHE) the rotational hysteresis losses in NiFeGe thin magnetic films were measured. The calculation of the critical field for magnetization and rotational hysteresis losses based on extended Stoner-Wohlfarth theory including an exchange magnetic field is given.

Synthesis and controllable oxidation of monodisperse cobalt-doped wüstite nanoparticles and their core-shell stability and exchange-bias stabilization.

Science.gov (United States)

Chen, Chih-Jung; Chiang, Ray-Kuang; Kamali, Saeed; Wang, Sue-Lein

2015-09-14

Cobalt-doped wüstite (CWT), Co0.33Fe0.67O, nanoparticles were prepared via the thermal decomposition of CoFe2-oleate complexes in organic solvents. A controllable oxidation process was then performed to obtain Co0.33Fe0.67O/CoFe2O4 core-shell structures with different core-to-shell volume ratios and exchange bias properties. The oxidized core-shell samples with a ∼4 nm CoFe2O4 shell showed good resistance to oxygen transmission. Thus, it is inferred that the cobalt ferrite shell provides a better oxidation barrier performance than magnetite in the un-doped case. The hysteresis loops of the oxidized 19 nm samples exhibited a high exchange bias field (H(E)), an enhanced coercivity field (H(C)), and a pronounced vertical shift, thus indicating the presence of a strong exchange bias coupling effect. More importantly, the onset temperature of H(E) was found to be higher than 200 K, which suggests that cobalt doping increases the Néel temperature (T(N)) of the CWT core. In general, the results show that the homogeneous dispersion of Co in iron precursors improves the stability of the final CWT nanoparticles. Moreover, the CoFe2O4 shells formed following oxidation increase the oxidation resistance of the CWT cores and enhance their anisotropy energy.

Integrated packaging of multiple double sided cooling planar bond power modules

Science.gov (United States)

Liang, Zhenxian

2018-04-10

An integrated double sided cooled power module has one or multiple phase legs configuration including one or more planar power packages, each planar power package having an upper power switch unit and a lower power switch unit directly bonded and interconnected between two insulated power substrates, and further sandwiched between two heat exchangers via direct bonds. A segmented coolant manifold is interposed with the one or more planar power packages and creates a sealed enclosure that defines a coolant inlet, a coolant outlet and a coolant flow path between the inlet and the outlet. A coolant circulates along the flow path to remove heat and increase the power density of the power module.

Experimental halls workshop summary

International Nuclear Information System (INIS)

Thorndike, A.

1976-01-01

On May 26 and 27, 1976, approximately 50 people met for an informal workshop on plans for experimental halls for ISABELLE. Plans as they exist in the May 1976 version of the ISABELLE proposal were presented. Discussions were held on the following four general topics by separate working groups: (1) pros and cons of open areas as compared with enclosed halls; (2) experimental hall needs of ep, anti pp, and other options; (3) hall for the lepton detector; and (4) hall for the hadron spectrometer. The planning for experimental halls at PEP, the hall for the lepton detector, the hadron spectrometer, and open areas are discussed

Parity Anomaly and Spin Transmutation in Quantum Spin Hall Josephson Junctions.

Science.gov (United States)

Peng, Yang; Vinkler-Aviv, Yuval; Brouwer, Piet W; Glazman, Leonid I; von Oppen, Felix

2016-12-23

We study the Josephson effect in a quantum spin Hall system coupled to a localized magnetic impurity. As a consequence of the fermion parity anomaly, the spin of the combined system of impurity and spin-Hall edge alternates between half-integer and integer values when the superconducting phase difference across the junction advances by 2π. This leads to characteristic differences in the splittings of the spin multiplets by exchange coupling and single-ion anisotropy at phase differences, for which time-reversal symmetry is preserved. We discuss the resulting 8π-periodic (or Z_{4}) fractional Josephson effect in the context of recent experiments.

Capabilities of silicon Shottki barriers and planar detectors in low-energy proton spectometry

Energy Technology Data Exchange (ETDEWEB)

Verbitskaya, E M; Eremin, V K; Malyarenko, A M; Sakharov, V I; Serenkov, I T; Strokan, N B; Sukhanov, V L

1987-05-12

Dependence of the resolution of surface barrier and planar diffusion silicon detectors on proton energy is investigated. The experiment was conducted at the device, representing the double mass spectrometer with the maximal energy of single-charged ions up to 200 keV. Two advantages of using planar diffusion detectors for light low-energy ion spectrometry is established: high energy resolution and independence of signal amplitude of bias voltage. Background noise represents the main factor dictaiting resolution, but fluctuations of losses in input window are sufficient as well. It was concluded that planar detector application for spectrometry of protons with energy of less than 200 keV would improve the resolution up to 2.2 keV without detector cooling.

Observation of giant exchange bias in bulk Mn50Ni42Sn8 Heusler alloy

Science.gov (United States)

Sharma, Jyoti; Suresh, K. G.

2015-02-01

We report a giant exchange bias (EB) field of 3520 Oe in bulk Mn50Ni42Sn8 Heusler alloy. The low temperature magnetic state of the martensite phase has been studied by DC magnetization and AC susceptibility measurements. Frequency dependence of spin freezing temperature (Tf) on critical slowing down relation and observation of memory effect in zero field cooling mode confirms the super spin glass (SSG) phase at low temperatures. Large EB is attributed to the strong exchange coupling between the SSG clusters formed by small regions of ferromagnetic order embedded in an antiferromagnetic (AFM) matrix. The temperature and cooling field dependence of EB have been studied and related to the change in unidirectional anisotropy at SSG/AFM interface. The training effect also corroborates with the presence of frozen (SSG) moments at the interface and their role in EB.

Magnetic stability under magnetic cycling of MgO-based magnetic tunneling junctions with an exchange-biased synthetic antiferromagnetic pinned layer

Directory of Open Access Journals (Sweden)

Qiang Hao

2016-02-01

Full Text Available We investigate the magnetic stability and endurance of MgO-based magnetic tunnel junctions (MTJs with an exchange-biased synthetic antiferromagnetic (SAF pinned layer. When a uniaxially cycling switching field is applied along the easy axis of the free magnetic layer, the magnetoresistance varies only by 1.7% logarithmically with the number of cycles, while no such change appears in the case of a rotating field. This observation is consistent with the effect of the formation and motion of domain walls in the free layer, which create significant stray fields within the pinned hard layer. Unlike in previous studies, the decay we observed only occurs during the first few starting cycles (<20, at which point there is no further variance in all performance parameters up to 107 cycles. Exchange-biased SAF structure is ideally suited for solid-state magnetic sensors and magnetic memory devices.

Indium tin oxide thin films by bias magnetron rf sputtering for heterojunction solar cells application

International Nuclear Information System (INIS)

Zhao Liang; Zhou Zhibin; Peng Hua; Cui Rongqiang

2005-01-01

In this investigation ITO thin films were prepared by bias magnetron rf sputtering technique at substrate temperature of 180 deg. C and low substrate-target distance for future a-Si:H/c-Si heterojunction (HJ) solar cells application. Microstructure, surface morphology, electrical and optical properties of these films were characterized and analyzed. The effects of ion bombardments on growing ITO films are well discussed. XRD analysis revealed a change in preferential orientation of polycrystalline structure from (2 2 2) to (4 0 0) plane with the increase of negative bias voltage. Textured surface were observed on AFM graphs of samples prepared at high negative bias. Hall measurements showed that the carrier density and Hall mobility of these ITO films are sensitive to the bias voltage applied. We attributed these effects to the sensitivity of energy of Ar + ions bombarding on growing films to the applied bias voltage in our experiments. At last the figure of merit was calculated to evaluate the quality of ITO thin films, the results of which show that sample prepared at bias voltage of -75 V is good to be used in HJ cells application

Experimental halls workshop summary

International Nuclear Information System (INIS)

Thorndike, A.

1976-01-01

A brief discussion is given of: (1) pros and cons of open areas as compared with enclosed halls; (2) experimental hall needs of ep, anti p p, and other options; (3) hall for the lepton detector; and, (4) hall for the hadron spectrometer

Experimental halls workshop summary

International Nuclear Information System (INIS)

Thorndike, A.

1976-01-01

At the experimental halls workshop, discussions were held on: (1) open areas as compared with enclosed halls; (2) the needs of ep, anti pp, and other options; (3) the hall for the lepton detector; and (4) the hall for the hadron spectrometer. The value of different possibilities for the future experimental program was explored. A number of suggestions emerged which will be used as the design of the experimental halls progresses

Exchange bias and strain effect co-modulated magnetic symmetry in La0.6Sr0.4MnO3/orthorhombic-YMnO3 multiferroic heterostructures

Science.gov (United States)

Zheng, Dongxing; Gong, Junlu; Jin, Chao; Li, Peng; Feng, Liefeng; Bai, Haili

2017-06-01

The exchange bias and strain effect co-modulated magnetic symmetry in all oxide La0.6Sr0.4MnO3 (LSMO) and orthorhombic YMnO3 (YMO) multiferroic heterostructures were studied. Because of the lattice mismatch between the LSMO and YMO layers, the LSMO layer exhibits a 90° rotation growth on the YMO layer. The strain induced growth not only leads to a 90° phase shift in the anisotropic magnetoresistance (AMR) curves, but also brings a two-fold symmetric magnetoelastic coupling energy along the LSMO [1 1 0] direction. With the incorporation of magnetoelastic coupling energy and exchange coupling energy, the exchange bias induced torque shows a phase shift and causes the asymmetry of the peak position and value in the AMR curves. This work illustrates a modulated magnetic symmetry in ferromagnetic/multiferroic systems by interfacial exchange coupling and strain effect, which will benefit the design of magnetoelectric devices.

Exchange bias and strain effect co-modulated magnetic symmetry in La0.6Sr0.4MnO3/orthorhombic-YMnO3 multiferroic heterostructures

KAUST Repository

Zheng, Dongxing

2017-05-03

The exchange bias and strain effect co-modulated magnetic symmetry in all oxide La0.6Sr0.4MnO3 (LSMO) and orthorhombic YMnO3 (YMO) multiferroic heterostructures were studied. Because of the lattice mismatch between the LSMO and YMO layers, the LSMO layer exhibits a 90° rotation growth on the YMO layer. The strain induced growth not only leads to a 90° phase shift in the anisotropic magnetoresistance (AMR) curves, but also brings a two-fold symmetric magnetoelastic coupling energy along the LSMO $[1\\\\,1\\\\,0]$ direction. With the incorporation of magnetoelastic coupling energy and exchange coupling energy, the exchange bias induced torque shows a phase shift and causes the asymmetry of the peak position and value in the AMR curves. This work illustrates a modulated magnetic symmetry in ferromagnetic/multiferroic systems by interfacial exchange coupling and strain effect, which will benefit the design of magnetoelectric devices.

Exchange bias and strain effect co-modulated magnetic symmetry in La0.6Sr0.4MnO3/orthorhombic-YMnO3 multiferroic heterostructures

KAUST Repository

Zheng, Dongxing; Gong, Junlu; Jin, Chao; Li, Peng; Feng, Liefeng; Bai, Haili

2017-01-01

The exchange bias and strain effect co-modulated magnetic symmetry in all oxide La0.6Sr0.4MnO3 (LSMO) and orthorhombic YMnO3 (YMO) multiferroic heterostructures were studied. Because of the lattice mismatch between the LSMO and YMO layers, the LSMO layer exhibits a 90° rotation growth on the YMO layer. The strain induced growth not only leads to a 90° phase shift in the anisotropic magnetoresistance (AMR) curves, but also brings a two-fold symmetric magnetoelastic coupling energy along the LSMO $[1\\,1\\,0]$ direction. With the incorporation of magnetoelastic coupling energy and exchange coupling energy, the exchange bias induced torque shows a phase shift and causes the asymmetry of the peak position and value in the AMR curves. This work illustrates a modulated magnetic symmetry in ferromagnetic/multiferroic systems by interfacial exchange coupling and strain effect, which will benefit the design of magnetoelectric devices.

Evaluation of Pressure Changes in HANARO Reactor Hall after a Reactor Shutdown

International Nuclear Information System (INIS)

Han, Geeyang; Han, Jaesam; Ahn, Gukhoon; Jung, Hoansung

2013-01-01

The major objective of this work is intended to evaluate the characteristics of the thermal behavior regarding how the decay heat will be affected by the reactor hall pressure change and the increase of pool water temperature induced in the primary coolant after a reactor shutdown. The particular reactor pool water temperature at the surface where it is evaporated owing to the decay heat resulting in the local heat transfer rate is related to the pressure change response in the reactor hall associated with the primary cooling system because of the reduction of the heat exchanger to remove the heat. The increase in the pool water temperature is proportional to the heat transfer rate in the reactor pool. Consequently, any limit on the reactor pool water temperature imposes a corresponding limit on the reactor hall pressure. At HANARO, the decay heat after a reactor shutdown is mainly removed by the natural circulation cooling in the reactor pool. This paper is written for the safety feature of the pressure change related leakage rate from the reactor hall. The calculation results show that the increase of pressure in the reactor hall will not cause any serious problems to the safety limits although the reactor hall pressure is slightly increased. Therefore, it was concluded that the pool water temperature increase is not so rapid as to cause the pressure to vary significantly in the reactor hall. Furthermore, the mathematical model developed in this work can be a useful analytical tool for scoping and parametric studies in the area of thermal transient analysis, with its proper representation of the interaction between the temperature and pressure in the reactor hall

Defect-tuning exchange bias of ferromagnet/antiferromagnet core/shell nanoparticles by numerical study

International Nuclear Information System (INIS)

Mao Zhongquan; Chen Xi; Zhan Xiaozhi

2012-01-01

The influence of non-magnetic defects on the exchange bias (EB) of ferromagnet (FM)/antiferromagnet (AFM) core/shell nanoparticles is studied by Monte Carlo simulations. It is found that the EB can be tuned by defects in different positions. Defects at both the AFM and FM interfaces reduce the EB field while they enhance the coercive field by decreasing the effective interface coupling. However, the EB field and the coercive field show respectively a non-monotonic and a monotonic dependence on the defect concentration when the defects are located inside the AFM shell, indicating a similar microscopic mechanism to that proposed in the domain state model. These results suggest a way to optimize the EB effect for applications. (paper)

Exchange bias training effect in phase separated polycrystalline Sm{sub 0.1}Ca{sub 0.7}Sr{sub 0.2}MnO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Markovich, V., E-mail: markoviv@bgu.ac.il [Department of Physics, Ben-Gurion University of the Negev, 84105, Beer-Sheva (Israel); Fita, I.; Wisniewski, A.; Puzniak, R. [Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, 02-668, Warsaw (Poland); Martin, C. [Laboratoire CRISMAT, UMR 6508, ISMRA, 14050, Caen Cedex (France); Jung, G. [Department of Physics, Ben-Gurion University of the Negev, 84105, Beer-Sheva (Israel); Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, 02-668, Warsaw (Poland); Gorodetsky, G. [Department of Physics, Ben-Gurion University of the Negev, 84105, Beer-Sheva (Israel)

2016-12-01

Magnetic properties of antiferromagnetic (AFM) electron doped manganite Sm{sub 0.1}Ca{sub 0.7}Sr{sub 0.2}MnO{sub 3} have been investigated, focusing mainly on the exchange bias (EB) effect and associated training effect. The studied compound exhibits the ground state with heterogeneous spin configuration, consisting of the C-type antiferromagnetic phase with the Néel temperature T{sub N-C} ≈ 120 K, the G-AFM phase with the Néel temperature T{sub N-G} ≈ 60 K, and ferromagnetic-like phase with a very weak spontaneous magnetic moment. Measurements of hysteresis loops have shown that the exchange bias field monotonously decreases with increasing temperature and vanishes above 40 K, while the coercivity disappears only above 70 K. The temperature variation of the exchange bias field has been successfully described by an exponential decay form. The stability of EB has been evaluated in the studies of the training effect, which has been discussed in the frame of the spin relaxation model, elucidating the important role of the AFM domain rearrangement at the interface. The complex phase separation and possible contributions from different interfaces between coexisting magnetic phases to the EB effect have also been discussed. - Highlights: • Sm{sub 0.1}Ca{sub 0.7}Sr{sub 0.2}MnO{sub 3} exhibits exchange bias (EB) effect at low temperatures T < 40 K. • The EB effect is associated with the phase separation and the presence of FM clusters as well as the G- and C-type AFM phases. • The training effect (TE) has been discussed in the frame of the spin relaxation model. • The TE is relatively small, indicating that AFM moment configuration is almost frozen during the magnetization reversal.

Bond and Equity Home Bias and Foreign Bias: an International Study

OpenAIRE

VanPée, Rosanne; De Moor, Lieven

2012-01-01

In this paper we explore tentatively and formally the differences between bond and equity home bias and foreign bias based on one large scale dataset including developed and emerging markets for the period 2001 to 2010. We set the stage by tentatively and formally linking the diversion of bond and equity home bias in OECD countries to the increasing public debt issues under the form of government bonds i.e. the supply-driven argument. Unlike Fidora et al. (2007) we do not find that exchange r...

Comparison of rectangular and dual-planar positron emission mammography scanners

International Nuclear Information System (INIS)

Qi, Jinyi; Kuo, Chaincy; Huesman, Ronald H.; Klein, Gregory J.; Moses, William W.; Reutter, Bryan W.

2002-01-01

Breast imaging using dedicated positron emission tomography (PEM) has gained much interest in the medical imaging field. In this paper, we compare the performance between a rectangular geometry and a parallel dual-planar geometry. Both geometries are studied with depth of interaction (DOI) detectors and non- DOI detectors. We compare the Fisher-information matrix, lesion detection, and quantitation of the four systems. The lesion detectability is measured by the signal-to-noise ratio (SNR) of a prewhitening numerical observer for detecting a known hot spot on a uniform background. Results show that the rectangular system with DOI has the highest SNR for the detection task and the lowest bias at any given noise level for the quantitation task. They also show that for small simulated lesions the parallel dual-planar system with DOI detectors outperforms the rectangular system with non-DOI detectors, while the rectangular system with non-DOI detectors can outperform the parallel dual-planar system with DOI detectors for large simulated lesions

A planar and tunable bandpass filter on a ferrite substrate with integrated windings

KAUST Repository

Arabi, Eyad A.

2015-05-01

Tunable Filters that are based on ferrite materials are often biased by external magnets or coils which are large and bulky. In this work a completely planar, CPW-based bandpass filter is presented with integrated windings. Due to these windings the size of the filter is only 26mm × 34mm × 0.38mm which is orders of magnitude smaller than the traditional designs with external windings. The filter is realized by electroplating of Copper over seed layers of Titanium and Gold over a YIG substrate. The fabricated filter achieves a tunability of 3.4% without any external magnets or coils. A good insertion loss of 2.3 dBs and rejection greater than 50 dBs have been obtained. To the best of the authors knowledge, this design is the first ferrite-based design that is completely planar and self-biased.

Topological Hall and spin Hall effects in disordered skyrmionic textures

KAUST Repository

Ndiaye, Papa Birame; Akosa, Collins Ashu; Manchon, Aurelien

2017-01-01

We carry out a thorough study of the topological Hall and topological spin Hall effects in disordered skyrmionic systems: the dimensionless (spin) Hall angles are evaluated across the energy-band structure in the multiprobe Landauer-Büttiker formalism and their link to the effective magnetic field emerging from the real-space topology of the spin texture is highlighted. We discuss these results for an optimal skyrmion size and for various sizes of the sample and find that the adiabatic approximation still holds for large skyrmions as well as for nanoskyrmions. Finally, we test the robustness of the topological signals against disorder strength and show that the topological Hall effect is highly sensitive to momentum scattering.

Topological Hall and spin Hall effects in disordered skyrmionic textures

KAUST Repository

Ndiaye, Papa Birame

2017-02-24

We carry out a thorough study of the topological Hall and topological spin Hall effects in disordered skyrmionic systems: the dimensionless (spin) Hall angles are evaluated across the energy-band structure in the multiprobe Landauer-Büttiker formalism and their link to the effective magnetic field emerging from the real-space topology of the spin texture is highlighted. We discuss these results for an optimal skyrmion size and for various sizes of the sample and find that the adiabatic approximation still holds for large skyrmions as well as for nanoskyrmions. Finally, we test the robustness of the topological signals against disorder strength and show that the topological Hall effect is highly sensitive to momentum scattering.

Magnetic properties of NiMn2O4−δ (nickel manganite): Multiple magnetic phase transitions and exchange bias effect

International Nuclear Information System (INIS)

Tadic, Marin; Savic, S.M.; Jaglicic, Z.; Vojisavljevic, K.; Radojkovic, A.; Prsic, S.; Nikolic, Dobrica

2014-01-01

Highlights: • We have successfully synthesized NiMn 2 O 4−δ sample by complex polymerization synthesis. • Magnetic measurements reveal complex properties and triple magnetic phase transitions. • Magnetic measurements of M(H) show hysteretic behavior below 120 K. • Hysteresis properties after cooling of the sample in magnetic field show exchange bias effect. -- Abstract: We present magnetic properties of NiMn 2 O 4−δ (nickel manganite) which was synthesized by complex polymerization synthesis method followed by successive heat treatment and final calcinations in air at 1200 °C. The sample was characterized by using X-ray powder diffractometer (XRPD), scanning electron microscopy (SEM), field-emission scanning electron microscopy (FE-SEM) and superconducting quantum interference device (SQUID) magnetometer. The XRPD and FE-SEM studies revealed NiMn 2 O 4−δ phase and good crystallinity of particles. No other impurities have been observed by XRPD. The magnetic properties of the sample have been studied by measuring the temperature and field dependence of magnetization. Magnetic measurements of M(T) reveal rather complex magnetic properties and multiple magnetic phase transitions. We show three magnetic phase transitions with transition temperatures at T M1 = 35 K (long-range antiferromagnetic transition), T M2 = 101 K (antiferromagnetic-type transition) and T M3 = 120 K (ferromagnetic-like transition). We found that the T M1 transition is strongly dependent on the strength of the applied magnetic field (T M1 decreases with increasing applied field) whereas the T M3 is field independent. Otherwise, the T M2 maximum almost disappears in higher applied magnetic fields (H = 1 kOe and 10 kOe). Magnetic measurements of M(H) show hysteretic behavior below T M3 . Moreover, hysteresis properties measured after cooling of the sample in magnetic field of 10 kOe show exchange bias effect with an exchange bias field |H EB |=196 Oe. In summary, the properties that

A method for the quantification of biased signalling at constitutively active receptors.

Science.gov (United States)

Hall, David A; Giraldo, Jesús

2018-06-01

Biased agonism, the ability of an agonist to differentially activate one of several signal transduction pathways when acting at a given receptor, is an increasingly recognized phenomenon at many receptors. The Black and Leff operational model lacks a way to describe constitutive receptor activity and hence inverse agonism. Thus, it is impossible to analyse the biased signalling of inverse agonists using this model. In this theoretical work, we develop and illustrate methods for the analysis of biased inverse agonism. Methods were derived for quantifying biased signalling in systems that demonstrate constitutive activity using the modified operational model proposed by Slack and Hall. The methods were illustrated using Monte Carlo simulations. The Monte Carlo simulations demonstrated that, with an appropriate experimental design, the model parameters are 'identifiable'. The method is consistent with methods based on the measurement of intrinsic relative activity (RA i ) (ΔΔlogR or ΔΔlog(τ/K a )) proposed by Ehlert and Kenakin and their co-workers but has some advantages. In particular, it allows the quantification of ligand bias independently of 'system bias' removing the requirement to normalize to a standard ligand. In systems with constitutive activity, the Slack and Hall model provides methods for quantifying the absolute bias of agonists and inverse agonists. This provides an alternative to methods based on RA i and is complementary to the ΔΔlog(τ/K a ) method of Kenakin et al. in systems where use of that method is inappropriate due to the presence of constitutive activity. © 2018 The British Pharmacological Society.

Hall effect in hopping regime

International Nuclear Information System (INIS)

Avdonin, A.; Skupiński, P.; Grasza, K.

2016-01-01

A simple description of the Hall effect in the hopping regime of conductivity in semiconductors is presented. Expressions for the Hall coefficient and Hall mobility are derived by considering averaged equilibrium electron transport in a single triangle of localization sites in a magnetic field. Dependence of the Hall coefficient is analyzed in a wide range of temperature and magnetic field values. Our theoretical result is applied to our experimental data on temperature dependence of Hall effect and Hall mobility in ZnO. - Highlights: • Expressions for Hall coefficient and mobility for hopping conductivity are derived. • Theoretical result is compared with experimental curves measured on ZnO. • Simultaneous action of free and hopping conduction channels is considered. • Non-linearity of hopping Hall coefficient is predicted.

Hall effect in hopping regime

Energy Technology Data Exchange (ETDEWEB)

Avdonin, A., E-mail: avdonin@ifpan.edu.pl [Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa (Poland); Skupiński, P. [Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa (Poland); Grasza, K. [Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa (Poland); Institute of Electronic Materials Technology, ul. Wólczyńska 133, 01-919 Warszawa (Poland)

2016-02-15

A simple description of the Hall effect in the hopping regime of conductivity in semiconductors is presented. Expressions for the Hall coefficient and Hall mobility are derived by considering averaged equilibrium electron transport in a single triangle of localization sites in a magnetic field. Dependence of the Hall coefficient is analyzed in a wide range of temperature and magnetic field values. Our theoretical result is applied to our experimental data on temperature dependence of Hall effect and Hall mobility in ZnO. - Highlights: • Expressions for Hall coefficient and mobility for hopping conductivity are derived. • Theoretical result is compared with experimental curves measured on ZnO. • Simultaneous action of free and hopping conduction channels is considered. • Non-linearity of hopping Hall coefficient is predicted.

Enhancement of the spin Hall voltage in a reverse-biased planar pn-junction

Czech Academy of Sciences Publication Activity Database

Nádvorník, Lukáš; Olejník, Kamil; Němec, P.; Novák, Vít; Janda, Tomáš; Wunderlich, Joerg; Trojánek, F.; Jungwirth, Tomáš

2016-01-01

Roč. 94, č. 7 (2016), 1-10, č. článku 0753306. ISSN 1098-0121 R&D Projects: GA MŠk LM2015087; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Institutional support: RVO:68378271 Keywords : spintronics * opto-electronics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

Hall effect enhanced low-field sensitivity in a three-contact extraordinary magnetoresistance sensor

KAUST Repository

Sun, Jian; Kosel, Jü rgen

2012-01-01

be attributed to an additional influence coming from the Hall effect. Output sensitivities of 0.19 mV/T at zero-field and 0.2 mV/T at 0.01 T have been measured in the device, which is equivalent to the ones of the conventional EMR sensors with a bias of ∼0.04 T

Dopant site location in dual-implanted GaP using (111) planar channeling

International Nuclear Information System (INIS)

Parikh, N.R.; Kao, C.T.; Lee, D.R.; Muse, J.; Swanson, M.L.; Venkatasubramanian, R.; Timmons, M.

1990-01-01

Previous studies have indicated that dual implantation can efficiently introduce group IV dopant onto selected sub-lattice sites in III--V compound semiconductors, thus enhancing electrical activation. The authors have studied this phenomenon in GaP using Rutherford Backscattering Spectroscopy (RBS) to determine the lattice location of Sn atoms. The authors used single crystals of GaP (100) which had been implanted at 400 degrees C with 120 Sn + following previously implanted 69 Ga + or 31 P + . Energies were selected for equivalent projected ranges, and all species were implanted with doses of 1 x 10 15 atoms/cm 2 . Asymmetry in the angular scan of the {111} planar channel was then used to determine the sub-lattice location of the implanted Sn. RBS results indicated that for all implants Sn atoms were substituting Ga and P sites equally. However, Hall effect measurements gave p type conduction for GaP implanted with Sn alone, while those with prior implants of Ga or P resulted in n-type conduction. RBS and Hall effect results are explained by a vacancy complex model

Electrical control of exchange bias via oxygen migration across CoO-ZnO nanocomposite barrier

Science.gov (United States)

Li, Q.; Yan, S. S.; Xu, J.; Li, S. D.; Zhao, G. X.; Long, Y. Z.; Shen, T. T.; Zhang, K.; Zhang, J.

2016-12-01

We proposed a nanocomposite barrier CoO-ZnO for magnetism manipulation in Co/CoO-ZnO/Ag heterojunctions. Both electrical control of magnetism and resistive switching were realized in this junction. An electrical tunable exchange bias of CoO1-v (v denotes O vacancies) on Co films was realized using voltages below 1 volt. The magnetism modulation associated with resistive switching can be attributed to the oxygen ions migration between the insulating CoO1-v layer and the semiconductive ZnO1-v layer, which can cause both ferromagnetic phase and resistance switching of CoO1-v layer.

Contribution of the study of the Hall Effect. Hall Effect of powder products

International Nuclear Information System (INIS)

Cherville, Jean

1961-01-01

This research thesis reports the development of an apparatus aimed at measuring the Hall Effect and the magneto-resistance of powders at room temperature and at the liquid nitrogen temperature. The author also proposes a theoretical contribution to the Hall Effect and reports the calculation of conditions to be met to obtain a correct value for the Hall constant. Results are experimentally verified. The method is then applied to the study of a set of powdered pre-graphitic graphites. The author shows that their Hall coefficient confirms the model already proposed by Mrozowski. The study of the Hall Effect of any kind of powders can thus be performed, and the Hall Effect can therefore be a mean to study mineral and organic compounds, and notably powdered biological molecules [fr

Cryogenic microsize Hall sensors

International Nuclear Information System (INIS)

Kvitkovic, J.; Polak, M.

1993-01-01

Hall sensors have a variety of applications in magnetic field measurements. The active area of the Hall sensor does not play an important role in measuring of homogeneous magnetic field. Actually Hall sensors are widely used to measure profiles of magnetic fields produced by magnetization currents in samples of HTC superconductors, as well as of LTC ones. Similar techniques are used to measure magnetization of both HTC and LTC superconductors. In these cases Hall sensor operates in highly inhomogeneous magnetic fields. Because of that, Hall sensors with very small active area are required. We developed and tested Hall sensors with active area 100 μm x 100 μm - type M and 50 μm x 50 μm - type V. Here we report on the most imporant parameters of these units, as well as on their properties as differential magnetometer. (orig.)

Topological Hall and Spin Hall Effects in Disordered Skyrmionic Textures

OpenAIRE

N'diaye, P. B.; Akosa, C. A.; Manchon, A.

2016-01-01

We carry out a throughout study of the topological Hall and topological spin Hall effects in disordered skyrmionic systems: the dimensionless (spin) Hall angles are evaluated across the energy band structure in the multiprobe Landauer-B\\"uttiker formalism and their link to the effective magnetic field emerging from the real space topology of the spin texture is highlighted. We discuss these results for an optimal skyrmion size and for various sizes of the sample and found that the adiabatic a...

Silica aerogel threshold Cherenkov counters for the JLab Hall A spectrometers: improvements and proposed modifications

CERN Document Server

Lagamba, L; Colilli, S; Crateri, R; De Leo, R; Frullani, S; Garibaldi, F; Giuliani, F; Gricia, M; Iodice, M; Iommi, R; Leone, A; Lucentini, M; Mostarda, A; Nappi, E; Perrino, R; Pierangeli, L; Santavenere, F; Urciuoli, G M

2001-01-01

Recently approved experiments at Jefferson Lab Hall A require a clean kaon identification in a large electron, pion, and proton background environment. To this end, improved performance is required of the silica aerogel threshold Cherenkov counters installed in the focal plane of the two Hall A spectrometers. In this paper we propose two strategies to improve the performance of the Cherenkov counters which presently use a hydrophilic aerogel radiator, and convey Cherenkov photons towards the photomultipliers by means of mirrors with a parabolic shape in one direction and flat in the other. The first strategy is aerogel baking. In the second strategy we propose a modification of the counter geometry by replacing the mirrors with a planar diffusing surface and by displacing in a different way the photomultipliers. Tests at CERN with a 5 GeV/c multiparticle beam revealed that both the strategies are able to increase significantly the number of the detected Cherenkov photons and, therefore, the detector performan...

Tuning giant anomalous Hall resistance ratio in perpendicular Hall balance

Energy Technology Data Exchange (ETDEWEB)

Zhang, J. Y.; Yang, G. [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China); State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Wang, S. G., E-mail: sgwang@iphy.ac.cn, E-mail: ghyu@mater.ustb.edu.cn [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Liu, J. L. [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Department of Physics, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China); Wang, R. M. [Department of Physics, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China); Amsellem, E.; Kohn, A. [Department of Materials Engineering, Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, Beer-Sheva 84105 (Israel); Yu, G. H., E-mail: sgwang@iphy.ac.cn, E-mail: ghyu@mater.ustb.edu.cn [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China)

2015-04-13

Anomalous Hall effect at room temperature in perpendicular Hall balance with a core structure of [Pt/Co]{sub 4}/NiO/[Co/Pt]{sub 4} has been tuned by functional CoO layers, where [Pt/Co]{sub 4} multilayers exhibit perpendicular magnetic anisotropy. A giant Hall resistance ratio up to 69 900% and saturation Hall resistance (R{sub S}{sup P}) up to 2590 mΩ were obtained in CoO/[Pt/Co]{sub 4}/NiO/[Co/Pt]{sub 4}/CoO system, which is 302% and 146% larger than that in the structure without CoO layers, respectively. Transmission electron microscopy shows highly textured [Co/Pt]{sub 4} multilayers and oxide layers with local epitaxial relations, indicating that the crystallographic structure has significant influence on spin dependent transport properties.

The infrared Hall effect in YBCO: Temperature and frequency dependence of Hall scattering

International Nuclear Information System (INIS)

Grayson, M.; Cerne, J.; Drew, H.D.; Schmadel, D.C.; Hughes, R.; Preston, J.S.; Kung, P.J.; Vale, L.

1999-01-01

The authors measure the Hall angle, θ H , in YBCO films in the far- and mid-infrared to determine the temperature and frequency dependence of the Hall scattering. Using novel modulation techniques they measure both the Faraday rotation and ellipticity induced by these films in high magnetic fields to deduce the complex conductivity tensor. They observe a strong temperature dependence of the mid-infrared Hall conductivity in sharp contrast to the weak dependence of the longitudinal conductivity. By fitting the frequency dependent normal state Hall angle to a Lorentzian θ H (ω) = ω H /(γ H minus iω) they find the Hall frequency, ω H , is nearly independent of temperature. The Hall scattering rate, γ H , is consistent with γ H ∼ T 2 up to 200 K and is remarkably independent of IR frequency suggesting non-Fermi liquid behavior

Magnetization reversal and tunable exchange bias in GdCr{sub 1−x}Mn{sub x}O{sub 3} (x=0−0.50)

Energy Technology Data Exchange (ETDEWEB)

Dash, Bibhuti B.; Ravi, S., E-mail: sravi@iitg.ernet.in

2017-05-01

Single phase samples of GdCr{sub 1-x}Mn{sub x}O{sub 3} (x=0−0.50) were prepared and their magnetic properties were studied by measuring temperature and field variations of magnetization. The Neel temperature, T{sub N} is found to decrease from T{sub N}=174 K for x=0 to 91 K for x=0.50. The magnetization reversal persists upto 5 at% of Mn substitution with a magnetic compensation temperature, T{sub comp} of 136 K and 139 K for x=0 and 0.05 respectively. However, spin reorientation induced magnetization reversal emerges for x=0.40 and 0.50 samples around 30 K. Tunable positive and negative exchange bias fields in the range of −1.0 kOe to +1.6 kOe have been observed. The origin of magnetization reversal and exchange bias field is explained in terms of antiparallel alignment of canted ferromagnetic component of Cr{sup 3+} ions and the paramagnetic moments of Gd{sup 3+} and Mn{sup 3+} ions under the influence of negative internal field due to antiferromagnetically ordered Cr{sup 3+} ions. - Highlights: • Magnetization reversal and bipolar switching in Mn substituted GdCrO{sub 3} • Tunable exchange bias field in the range of −1.0 kOe to +1.6 kOe. • Low temperature spin reorientation transition is observed.

The fluctuation Hall conductivity and the Hall angle in type-II superconductor under magnetic field

Energy Technology Data Exchange (ETDEWEB)

Tinh, Bui Duc, E-mail: tinhbd@hnue.edu.vn [Institute of Research and Development, Duy Tan University, K7/25 Quang Trung, Danang (Viet Nam); Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam); Hoc, Nguyen Quang; Thu, Le Minh [Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam)

2016-02-15

Highlights: • The time-dependent Ginzburg–Landau was used to calculate fluctuation Hall conductivity and Hall angle in type-II superconductor in 2D and 3D. • We obtain analytical expressions for the fluctuation Hall conductivity and the Hall angle summing all Landau levels without need to cutoff higher Landau levels to treat arbitrary magnetic field. • The results were compared to the experimental data on YBCO. - Abstract: The fluctuation Hall conductivity and the Hall angle, describing the Hall effect, are calculated for arbitrary value of the imaginary part of the relaxation time in the frame of the time-dependent Ginzburg–Landau theory in type II-superconductor with thermal noise describing strong thermal fluctuations. The self-consistent Gaussian approximation is used to treat the nonlinear interaction term in dynamics. We obtain analytical expressions for the fluctuation Hall conductivity and the Hall angle summing all Landau levels without need to cutoff higher Landau levels to treat arbitrary magnetic field. The results are compared with experimental data on high-T{sub c} superconductor.

Exchange magnetic field torques in YIG/Pt bilayers observed by the spin-Hall magnetoresistance

NARCIS (Netherlands)

Vlietstra, N.; Shan, J.; Castel, V.; Ben Youssef, J.; Bauer, G. E. W.; van Wees, B. J.

2013-01-01

The effective field torque of an yttrium-iron-garnet (YIG) film on the spin accumulation in an attached platinum (Pt) film is measured by the spin-Hall magnetoresistance (SMR). As a result, the magnetization direction of a ferromagnetic insulating layer can be measured electrically. Experimental

Skyrmions and Hall viscosity

Science.gov (United States)

Kim, Bom Soo

2018-05-01

We discuss the contribution of magnetic Skyrmions to the Hall viscosity and propose a simple way to identify it in experiments. The topological Skyrmion charge density has a distinct signature in the electric Hall conductivity that is identified in existing experimental data. In an electrically neutral system, the Skyrmion charge density is directly related to the thermal Hall conductivity. These results are direct consequences of the field theory Ward identities, which relate various physical quantities based on symmetries and have been previously applied to quantum Hall systems.

Performance of a Permanent-Magnet Cylindrical Hall-Effect Thruster

Science.gov (United States)

Polzin, K. A.; Sooby, E. S.; Kimberlin, A. C.; Raites, Y.; Merino, E.; Fisch, N. J.

2009-01-01

The performance of a low-power cylindrical Hall thruster, which more readily lends itself to miniaturization and low-power operation than a conventional (annular) Hall thruster, was measured using a planar plasma probe and a thrust stand. The field in the cylindrical thruster was produced using permanent magnets, promising a power reduction over previous cylindrical thruster iterations that employed electromagnets to generate the required magnetic field topology. Two sets of ring-shaped permanent magnets are used, and two different field configurations can be produced by reorienting the poles of one magnet relative to the other. A plasma probe measuring ion flux in the plume is used to estimate the current utilization for the two magnetic topologies. The measurements indicate that electron transport is impeded much more effectively in one configuration, implying higher thrust efficiency. Thruster performance measurements on this configuration were obtained over a power range of 70-350 W and with the cathode orifice located at three different axial positions relative to the thruster exit plane. The thrust levels over this power range were 1.25-6.5 mN, with anode efficiencies and specific impulses spanning 4-21% and 400-1950 s, respectively. The anode efficiency of the permanent-magnet thruster compares favorable with the efficiency of the electromagnet thruster when the power consumed by the electromagnets is taken into account.

Quantum Hall Electron Nematics

Science.gov (United States)

MacDonald, Allan

In 2D electron systems hosted by crystals with hexagonal symmetry, electron nematic phases with spontaneously broken C3 symmetry are expected to occur in the quantum Hall regime when triplets of Landau levels associated with three different Fermi surface pockets are partially filled. The broken symmetry state is driven by intravalley Coulombic exchange interactions that favor spontaneously polarized valley occupations. I will discuss three different examples of 2D electron systems in which this type of broken symmetry state is expected to occur: i) the SnTe (111) surface, ii) the Bi (111) surface. and iii) unbalanced bilayer graphene. This type of quantum Hall electron nematic state has so far been confirmed only in the Bi (111) case, in which the anisotropic quasiparticle wavefunctions of the broken symmetry state were directly imaged. In the SnTe case the nematic state phase boundary is controlled by a competition between intravalley Coulomb interactions and intervalley scattering processes that increase in relative strength with magnetic field. An in-plane Zeeman field alters the phase diagram by lifting the three-fold Landau level degeneracy, yielding a ground state energy with 2 π/3 periodicity as a function of Zeeman-field orientation angle. I will comment on the possibility of observing similar states in the absence of a magnetic field. Supported by DOE Division of Materials Sciences and Engineering Grant DE-FG03-02ER45958.

Exchange bias mechanism in FM/FM/AF spin valve systems in the presence of random unidirectional anisotropy field at the AF interface: The role played by the interface roughness due to randomness

Science.gov (United States)

Yüksel, Yusuf

2018-05-01

We propose an atomistic model and present Monte Carlo simulation results regarding the influence of FM/AF interface structure on the hysteresis mechanism and exchange bias behavior for a spin valve type FM/FM/AF magnetic junction. We simulate perfectly flat and roughened interface structures both with uncompensated interfacial AF moments. In order to simulate rough interface effect, we introduce the concept of random exchange anisotropy field induced at the interface, and acting on the interface AF spins. Our results yield that different types of the random field distributions of anisotropy field may lead to different behavior of exchange bias.

Level shift and charm mass: a test of asymptotic planarity

International Nuclear Information System (INIS)

Palmer, W.F.; Pinsky, S.S.; Shi, C.C.

1976-01-01

Level shifts and mixings away from exact exchange degeneracy are examined with respect to the ''asymptotic planarity'' predictions of Chew and Rosenzweig. It is found that the data in the J/sup P/ = 0 - , 1 - , and 2 + multiplets support neither the general shape nor the special relation proposed by Chew and Rosenzweig for the tensor and vector ''cylinder'' corrections

The Skill-Biased Effects of Exchange Rate Fluctuations

OpenAIRE

Boris Kaiser; Michael Siegenthaler

2015-01-01

This paper examines the linkages between real exchange rate movements and firms' skill demand. Real exchange rate movements may affect unskilled workers differently than skilled workers because of skill-specific adjustment costs, or because exchange rates lead to changes in relative factor prices and firms' competition intensity. Using panel data on Swiss manufacturers, we find that an appreciation increases high-skilled and reduces low-skilled employment in most firms, while total employment...

Thin n-in-p planar pixel modules for the ATLAS upgrade at HL-LHC

International Nuclear Information System (INIS)

Savic, N.; Bergbreiter, L.; Breuer, J.; La Rosa, A.; Macchiolo, A.; Nisius, R.; Terzo, S.

2017-01-01

The ATLAS experiment will undergo a major upgrade of the tracker system in view of the high luminosity phase of the LHC (HL-LHC) foreseen to start around 2025. Thin planar pixel modules are promising candidates to instrument the new pixel system, thanks to the reduced contribution to the material budget and their high charge collection efficiency after irradiation. New designs of the pixel cells, with an optimized biasing structure, have been implemented in n-in-p planar pixel productions with sensor thicknesses of 270 μm. Using beam tests, the gain in hit efficiency is investigated as a function of the received irradiation fluence. The outlook for future thin planar pixel sensor productions will be discussed, with a focus on thin sensors with a thickness of 100 and 150 μm and a novel design with the optimized biasing structure and small pixel cells (50×50 and 25×100 μm"2). These dimensions are foreseen for the new ATLAS read-out chip in 65 nm CMOS technology and the fine segmentation will represent a challenge for the tracking in the forward region of the pixel system at HL-LHC. To predict the performance of 50×50 μm"2 pixels at high η, FE-I4 compatible planar pixel sensors have been studied before and after irradiation in beam tests at high incidence angle with respect to the short pixel direction. Results on cluster shapes, charge collection- and hit efficiency will be shown.

Thin n-in-p planar pixel modules for the ATLAS upgrade at HL-LHC

Energy Technology Data Exchange (ETDEWEB)

Savic, N., E-mail: natascha.savic@mpp.mpg.de; Bergbreiter, L.; Breuer, J.; La Rosa, A.; Macchiolo, A.; Nisius, R.; Terzo, S.

2017-02-11

The ATLAS experiment will undergo a major upgrade of the tracker system in view of the high luminosity phase of the LHC (HL-LHC) foreseen to start around 2025. Thin planar pixel modules are promising candidates to instrument the new pixel system, thanks to the reduced contribution to the material budget and their high charge collection efficiency after irradiation. New designs of the pixel cells, with an optimized biasing structure, have been implemented in n-in-p planar pixel productions with sensor thicknesses of 270 μm. Using beam tests, the gain in hit efficiency is investigated as a function of the received irradiation fluence. The outlook for future thin planar pixel sensor productions will be discussed, with a focus on thin sensors with a thickness of 100 and 150 μm and a novel design with the optimized biasing structure and small pixel cells (50×50 and 25×100 μm{sup 2}). These dimensions are foreseen for the new ATLAS read-out chip in 65 nm CMOS technology and the fine segmentation will represent a challenge for the tracking in the forward region of the pixel system at HL-LHC. To predict the performance of 50×50 μm{sup 2} pixels at high η, FE-I4 compatible planar pixel sensors have been studied before and after irradiation in beam tests at high incidence angle with respect to the short pixel direction. Results on cluster shapes, charge collection- and hit efficiency will be shown.

Energy consumption of sport halls

Energy Technology Data Exchange (ETDEWEB)

1983-01-01

The energy consumption of Finland's sports halls (ball games halls, ice hockey halls and swimming halls) represent approximately 1% of that of the country's whole building stock. In the light of the facts revealed by the energy study the potential energy saving rate in sports halls is 15-25%. The total savings would be something like FIM 30-40 million per annum, of which about a half would be achieved without energy-economic investments only by changing utilization habits and by automatic control measures. The energy-economic investments are for the most part connected with ventilation and their repayment period is from one to five years. On the basis of the energy study the following specific consumption are presented as target values: swimming halls: heat (kWh/m*H3/a)100, electricity (kWh/m*H3/a)35, water (l/m*H3/a)1000 icehockey halls (warm): heat (kWh/m*H3/a)25, electricity (kWh/m*H3/a)15, water (l/m*H3/a)200, ball games halls (multi-purpose halls): heat (kWh/m*H3/a)30, electricity (kWh/m*H3/a)25, water (l/m*H3/a)130. In the study the following points proved to be the central areas of energy saving in sports halls: 1. Flexible regulation of the temperature in sports spaces on the basis of the sport in question. 2. The ventilation of swimming halls should be adjusted in such a way that the humidity of the hall air would comply with the limit humidity curve determined by the quality of structures and the temperature of the outdoor air. 3. An ice skating hall is an establishment producing condensing energy from 8 to 9 months a year worth of approx. 100.000-150.000 Finnmarks. The development of the recovery of condensing energy has become more important. 4. The ventilation of ball games halls may account for over 50% of the energy consumption of the whole building. Therefore special attention should be paid to the optimatization of ventilation as a whole.

Dual-Polarized Planar Phased Array Analysis for Meteorological Applications

Directory of Open Access Journals (Sweden)

Chen Pang

2015-01-01

Full Text Available This paper presents a theoretical analysis for the accuracy requirements of the planar polarimetric phased array radar (PPPAR in meteorological applications. Among many factors that contribute to the polarimetric biases, four factors are considered and analyzed in this study, namely, the polarization distortion due to the intrinsic limitation of a dual-polarized antenna element, the antenna pattern measurement error, the entire array patterns, and the imperfect horizontal and vertical channels. Two operation modes, the alternately transmitting and simultaneously receiving (ATSR mode and the simultaneously transmitting and simultaneously receiving (STSR mode, are discussed. For each mode, the polarimetric biases are formulated. As the STSR mode with orthogonal waveforms is similar to the ATSR mode, the analysis is mainly focused on the ATSR mode and the impacts of the bias sources on the measurement of polarimetric variables are investigated through Monte Carlo simulations. Some insights of the accuracy requirements are obtained and summarized.

Bias-Exchange Metadynamics Simulation of Membrane Permeation of 20 Amino Acids.

Science.gov (United States)

Cao, Zanxia; Bian, Yunqiang; Hu, Guodong; Zhao, Liling; Kong, Zhenzhen; Yang, Yuedong; Wang, Jihua; Zhou, Yaoqi

2018-03-16

Thermodynamics of the permeation of amino acids from water to lipid bilayers is an important first step for understanding the mechanism of cell-permeating peptides and the thermodynamics of membrane protein structure and stability. In this work, we employed bias-exchange metadynamics simulations to simulate the membrane permeation of all 20 amino acids from water to the center of a dipalmitoylphosphatidylcholine (DPPC) membrane (consists of 256 lipids) by using both directional and torsion angles for conformational sampling. The overall accuracy for the free energy profiles obtained is supported by significant correlation coefficients (correlation coefficient at 0.5-0.6) between our results and previous experimental or computational studies. The free energy profiles indicated that (1) polar amino acids have larger free energy barriers than nonpolar amino acids; (2) negatively charged amino acids are the most difficult to enter into the membrane; and (3) conformational transitions for many amino acids during membrane crossing is the key for reduced free energy barriers. These results represent the first set of simulated free energy profiles of membrane crossing for all 20 amino acids.

Bias-Exchange Metadynamics Simulation of Membrane Permeation of 20 Amino Acids

Directory of Open Access Journals (Sweden)

Zanxia Cao

2018-03-01

Full Text Available Thermodynamics of the permeation of amino acids from water to lipid bilayers is an important first step for understanding the mechanism of cell-permeating peptides and the thermodynamics of membrane protein structure and stability. In this work, we employed bias-exchange metadynamics simulations to simulate the membrane permeation of all 20 amino acids from water to the center of a dipalmitoylphosphatidylcholine (DPPC membrane (consists of 256 lipids by using both directional and torsion angles for conformational sampling. The overall accuracy for the free energy profiles obtained is supported by significant correlation coefficients (correlation coefficient at 0.5–0.6 between our results and previous experimental or computational studies. The free energy profiles indicated that (1 polar amino acids have larger free energy barriers than nonpolar amino acids; (2 negatively charged amino acids are the most difficult to enter into the membrane; and (3 conformational transitions for many amino acids during membrane crossing is the key for reduced free energy barriers. These results represent the first set of simulated free energy profiles of membrane crossing for all 20 amino acids.

Theory of activated transport in bilayer quantum Hall systems.

Science.gov (United States)

Roostaei, B; Mullen, K J; Fertig, H A; Simon, S H

2008-07-25

We analyze the transport properties of bilayer quantum Hall systems at total filling factor nu=1 in drag geometries as a function of interlayer bias, in the limit where the disorder is sufficiently strong to unbind meron-antimeron pairs, the charged topological defects of the system. We compute the typical energy barrier for these objects to cross incompressible regions within the disordered system using a Hartree-Fock approach, and show how this leads to multiple activation energies when the system is biased. We then demonstrate using a bosonic Chern-Simons theory that in drag geometries current in a single layer directly leads to forces on only two of the four types of merons, inducing dissipation only in the drive layer. Dissipation in the drag layer results from interactions among the merons, resulting in very different temperature dependences for the drag and drive layers, in qualitative agreement with experiment.

Exchange-bias-like effect in Pr{sub 0.75}Tb{sub 0.25}Al{sub 2} and Pr{sub 0.7}Tb{sub 0.3}Al{sub 2} samples

Energy Technology Data Exchange (ETDEWEB)

Tedesco, J.C.G., E-mail: tedesco.jcg@gmail.com [Instituto de Física “Gleb Wataghin”, Universidade Estadual de Campinas—UNICAMP, 13083-859 Campinas, SP (Brazil); Pires, M.J.M. [Instituto de Ciência e Tecnologia—ICT, Universidade Federal dos Vales do Jequitinhonha e Mucuri—UFVJM, 39100-000 Diamantina, MG (Brazil); Carvalho, A. Magnus G. [Divisão de Metrologia de Materiais (DIMAT), INMETRO, 25250-020 Duque de Caxias, RJ (Brazil); Sousa, V.S.R. de [Instituto de Física “Armando Dias Tavares”, Universidade do Estado do Rio de Janeiro—UERJ, 20550-013 Rio de Janeiro, RJ (Brazil); Cardoso, L.P.; Coelho, A.A. [Instituto de Física “Gleb Wataghin”, Universidade Estadual de Campinas—UNICAMP, 13083-859 Campinas, SP (Brazil)

2013-08-15

The magnetic behavior of pseudobinary Pr{sub 0.7}Tb{sub 0.3}Al{sub 2} and Pr{sub 0.75}Tb{sub 0.25}Al{sub 2} compounds was studied, and a predominant ferrimagnetic ordering was observed. Noteworthy characteristics such as negative magnetization, compensation points and exchange-bias-like (EB-like) effect were found. This EB-like effect was observed at temperatures below the compensation points. The effect is somewhat different from the one already studied in similar systems combining light and heavy rare earths. The results indicate that the EB-like effect characteristics are related to the conduction electron magnetic polarization and an induced unidirectional anisotropy present in these compounds. - Highlights: ► Ferrimagnetic behavior is observed in Pr{sub 0.7}Tb{sub 0.3}Al{sub 2} and Pr{sub 0.75}Tb{sub 0.25}Al{sub 2} materials. ► Magnetic data indicate a strong unidirectional anisotropy in studied materials. ► Studied materials present the exchange-bias-like effect. ► Exchange-bias-like effect explained in analogy with the known mechanism of thin films.

Interdefect charge exchange in silicon particle detectors at cryogenic temperatures

CERN Document Server

MacEvoy, B; Hall, G; Moscatelli, F; Passeri, D; Santocchia, A

2002-01-01

Silicon particle detectors in the next generation of experiments at the CERN Large Hadron Collider will be exposed to a very challenging radiation environment. The principal obstacle to long-term operation arises from changes in detector doping concentration (N/sub eff/), which lead to an increase in the bias required to deplete the detector and hence achieve efficient charge collection. We have previously presented a model of interdefect charge exchange between closely spaced centers in the dense terminal clusters formed by hadron irradiation. This manifestly non-Shockley-Read-Hall (SRH) mechanism leads to a marked increase in carrier generation rate and negative space charge over the SRH prediction. There is currently much interest in the subject of cryogenic detector operation as a means of improving radiation hardness. Our motivation, however, is primarily to investigate our model further by testing its predictions over a range of temperatures. We present measurements of spectra from /sup 241/Am alpha par...

A fully integrated GaAs-based three-axis Hall magnetic sensor exploiting self-positioned strain released structures

International Nuclear Information System (INIS)

Todaro, Maria T; Sileo, Leonardo; Epifani, Gianmichele; Tasco, Vittorianna; Cingolani, Roberto; De Vittorio, Massimo; Passaseo, Adriana

2010-01-01

In this work, we demonstrate a fully integrated three-axis Hall magnetic sensor by exploiting microfabrication technologies applied to a GaAs-based heterostructure. This allows us to obtain, by the same process, three mutually orthogonal sensors: an in-plane Hall sensor and two out-of-plane Hall sensors. The micromachined devices consist of a two-dimensional electron gas AlGaAs/InGaAs/GaAs multilayer which represents the sensing structure, grown on the top of an InGaAs/GaAs strained bilayer. After the release from the substrate, the strained bilayer acts as a hinge for the multilayered structure allowing the out-of-plane self-positioning of devices. Both the in-plane and out-of-plane Hall sensors show a linear response versus the magnetic field with a sensitivity for current-biased devices higher than 1000 V A −1 T −1 , corresponding to an absolute sensitivity more than 0.05 V T −1 at 50 µA. Moreover, Hall voltage measurements, as a function of the mechanical angle for both in-plane and out-of-plane sensors, demonstrate the potential of such a device for measurements of the three vector components of a magnetic field

Scanning vector Hall probe microscopy

International Nuclear Information System (INIS)

Cambel, V.; Gregusova, D.; Fedor, J.; Kudela, R.; Bending, S.J.

2004-01-01

We have developed a scanning vector Hall probe microscope for mapping magnetic field vector over magnetic samples. The microscope is based on a micromachined Hall sensor and the cryostat with scanning system. The vector Hall sensor active area is ∼5x5 μm 2 . It is realized by patterning three Hall probes on the tilted faces of GaAs pyramids. Data from these 'tilted' Hall probes are used to reconstruct the full magnetic field vector. The scanning area of the microscope is 5x5 mm 2 , space resolution 2.5 μm, field resolution ∼1 μT Hz -1/2 at temperatures 10-300 K

Statistical Bias in Maximum Likelihood Estimators of Item Parameters.

Science.gov (United States)

1982-04-01

34 a> E r’r~e r ,C Ie I# ne,..,.rVi rnd Id.,flfv b1 - bindk numb.r) I; ,t-i i-cd I ’ tiie bias in the maximum likelihood ,st i- i;, ’ t iIeiIrs in...NTC, IL 60088 Psychometric Laboratory University of North Carolina I ERIC Facility-Acquisitions Davie Hall 013A 4833 Rugby Avenue Chapel Hill, NC

Exchange anisotropy pinning of a standing spin-wave mode

Science.gov (United States)

Magaraggia, R.; Kennewell, K.; Kostylev, M.; Stamps, R. L.; Ali, M.; Greig, D.; Hickey, B. J.; Marrows, C. H.

2011-02-01

Standing spin waves in a thin film are used as sensitive probes of interface pinning induced by an antiferromagnet through exchange anisotropy. Using coplanar waveguide ferromagnetic resonance, pinning of the lowest energy spin-wave thickness mode in Ni80Fe20/Ir25Mn75 exchange-biased bilayers was studied for a range of Ir25Mn75 thicknesses. We show that pinning of the standing mode can be used to amplify, relative to the fundamental resonance, frequency shifts associated with exchange bias. The shifts provide a unique “fingerprint” of the exchange bias and can be interpreted in terms of an effective ferromagnetic film thickness and ferromagnet-antiferromagnet interface anisotropy. Thermal effects are studied for ultrathin antiferromagnetic Ir25Mn75 thicknesses, and the onset of bias is correlated with changes in the pinning fields. The pinning strength magnitude is found to grow with cooling of the sample, while the effective ferromagnetic film thickness simultaneously decreases. These results suggest that exchange bias involves some deformation of magnetic order in the interface region.

Transport in constricted quantum Hall systems: beyond the Kane-Fisher paradigm

International Nuclear Information System (INIS)

Lal, Siddhartha

2007-08-01

A simple model of edge transport in a constricted quantum Hall system with a lowered local fi lling factor is studied. The current backscattered from the constriction is explained from a matching of the properties of the edge-current excitations in the constriction (ν 2 ) and bulk (ν 1 ) regions. We develop a hydrodynamic theory for bosonic edge modes inspired by this model, stressing the importance of boundary conditions in elucidating the nature of current transport. By invoking a generalised quasiparticle-quasihole symmetry of the quantum Hall circuit system, we fi nd that a competition between two tunneling process determines the fate of the low-bias transmission conductance. A novel generalisation of the Kane-Fisher quantum impurity model is found, describing transitions from a weak-coupling theory at partial transmission to strong- coupling theories for perfect transmission and reflection as well as a new symmetry dictated fixed point. These results provide satisfactory explanations for recent experimental results at fi lling-factors of 1/3 and 1. (author)

Australia's Bond Home Bias

OpenAIRE

Anil V. Mishra; Umaru B. Conteh

2014-01-01

This paper constructs the float adjusted measure of home bias and explores the determinants of bond home bias by employing the International Monetary Fund's high quality dataset (2001 to 2009) on cross-border bond investment. The paper finds that Australian investors' prefer investing in countries with higher economic development and more developed bond markets. Exchange rate volatility appears to be an impediment for cross-border bond investment. Investors prefer investing in countries with ...

Spin-orbit torque induced magnetic vortex polarity reversal utilizing spin-Hall effect

Science.gov (United States)

Li, Cheng; Cai, Li; Liu, Baojun; Yang, Xiaokuo; Cui, Huanqing; Wang, Sen; Wei, Bo

2018-05-01

We propose an effective magnetic vortex polarity reversal scheme that makes use of spin-orbit torque introduced by spin-Hall effect in heavy-metal/ferromagnet multilayers structure, which can result in subnanosecond polarity reversal without endangering the structural stability. Micromagnetic simulations are performed to investigate the spin-Hall effect driven dynamics evolution of magnetic vortex. The mechanism of magnetic vortex polarity reversal is uncovered by a quantitative analysis of exchange energy density, magnetostatic energy density, and their total energy density. The simulation results indicate that the magnetic vortex polarity is reversed through the nucleation-annihilation process of topological vortex-antivortex pair. This scheme is an attractive option for ultra-fast magnetic vortex polarity reversal, which can be used as the guidelines for the choice of polarity reversal scheme in vortex-based random access memory.

The Sheath-less Planar Langmuir Probe

Science.gov (United States)

Cooke, D. L.

2017-12-01

The Langmuir probe is one of the oldest plasma diagnostics, provided the plasma density and species temperature from analysis of a current-voltage curve as the voltage is swept over a practically chosen range. The analysis depends on a knowledge or theory of the many factors that influence the current-voltage curve including, probe shape, size, nearby perturbations, and the voltage reference. For applications in Low Earth Orbit, the Planar Langmuir Probe, PLP, is an attractive geometry because the ram ion current is very constant over many Volts of a sweep, allowing the ion density and electron temperature to be determined independently with the same instrument, at different points on the sweep. However, when the physical voltage reference is itself small and electrically floating as with a small spacecraft, the spacecraft and probe system become a double probe where the current collection theory depends on the interaction of the spacecraft with the plasma which is generally not as simple as the probe itself. The Sheath-less PLP, SPLP, interlaces on a single ram facing surface, two variably biased probe elements, broken into many small and intertwined segments on a scale smaller than the plasma Debye length. The SPLP is electrically isolated from the rest of the spacecraft. For relative bias potentials of a few volts, the ion current to all segments of each element will be constant, while the electron currents will vary as a function of the element potential and the electron temperature. Because the segments are small, intertwined, and floating, the assembly will always present the same floating potential to the plasma, with minimal growth as a function of voltage, thus sheath-less and still planar. This concept has been modelled with Nascap, and tested with a physical model inserted into a Low Earth Orbit-like chamber plasma. Results will be presented.

Assessing Adaptive Functioning in Death Penalty Cases after Hall and DSM-5.

Science.gov (United States)

Hagan, Leigh D; Drogin, Eric Y; Guilmette, Thomas J

2016-03-01

DSM-5 and Hall v. Florida (2014) have dramatically refocused attention on the assessment of adaptive functioning in death penalty cases. In this article, we address strategies for assessing the adaptive functioning of defendants who seek exemption from capital punishment pursuant to Atkins v. Virginia (2002). In particular, we assert that evaluations of adaptive functioning should address assets as well as deficits; seek to identify credible and reliable evidence concerning the developmental period and across the lifespan; distinguish incapacity from the mere absence of adaptive behavior; adhere faithfully to test manual instructions for using standardized measures of adaptive functioning; and account for potential bias on the part of informants. We conclude with brief caveats regarding the standard error of measurement (SEM) in light of Hall, with reference to examples of ordinary life activities that directly illuminate adaptive functioning relevant to capital cases. © 2016 American Academy of Psychiatry and the Law.

Vortices in superconducting films: Statistics and fractional quantum Hall effect

International Nuclear Information System (INIS)

Dziarmaga, J.

1996-01-01

We present a derivation of the Berry phase picked up during exchange of parallel vortices. This derivation is based on the Bogolubov endash de Gennes formalism. The origin of the Magnus force is also critically reanalyzed. The Magnus force can be interpreted as an interaction with the effective magnetic field. The effective magnetic field may be even of the order 10 6 T/A. We discuss a possibility of the fractional quantum Hall effect (FQHE) in vortex systems. As the real magnetic field is varied to drive changes in vortex density, the vortex density will prefer to stay at some quantized values. The mere existence of the FQHE does not depend on vortex quantum statistics, although the pattern of the plateaux does. We also discuss how the density of anyonic vortices can lower the effective strengh of the Magnus force, what might be observable in measurements of Hall resistivity. copyright 1996 The American Physical Society

Antisite-disorder driven large exchange bias effect in phase separated La{sub 1.5}Ca{sub 0.5}CoMnO{sub 6} double perovskite

Energy Technology Data Exchange (ETDEWEB)

Sahoo, R.C.; Paladhi, D. [Department of Physics, Indian Institute of Technology Kharagpur, West Bengal 721302 (India); Dasgupta, Papri; Poddar, A. [Experimental Condensed Matter Physics Division, Saha Institute of Nuclear Physics, West Bengal (India); Singh, Ripandeep; Das, A. [Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Nath, T.K., E-mail: tnath@phy.iitkgp.ernet.in [Department of Physics, Indian Institute of Technology Kharagpur, West Bengal 721302 (India)

2017-04-15

Investigations of structural and magnetic properties of polycrystalline hole doped double perovskite La{sub 1.5}Ca{sub 0.5}CoMnO{sub 6} has clearly revealed the existence of structural antisite-disorder (either, Co–O–Co or Mn–O–Mn) in the system. The ordering of Co{sup 2+} and Mn{sup 4+} gives rise to a ferromagnetic transition around 157 K. A spin-canted antiferromagnetic transition is found in this material at T{sub CAFM} ~9 K. The effect of antisite-disorder in the double perovskite structure is most likely the prime reason for antiferromagnetic interaction. The temperature dependent inverse susceptibility exhibits Curie-Weiss like behaviour and it yields an effective paramagnetic moment of 6.49 μ{sub B}. At very low temperature (Texchange bias (EB) field of H{sub EB} ~5.5 kOe and can be tuned by the cooling field. The presence of zero-field cooled spontaneous EB effect (P-type and N-type) is confirmed to be not an experimental artefact - an inherent property of this double perovskite material. A phenomenological model has been proposed to explain the exchange coupling between the ferromagnetic and canted-antiferromagnetic interfaces of antisite-disordered La{sub 1.5}Ca{sub 0.5}CoMnO{sub 6} mainly on the basis of uncompensated interface spins. - Highlights: • Large exchange bias (EB) effect has been observed in 25% Ca doped La{sub 2}CoMnO{sub 6} antisite-disordered system. • Neutron powder diffraction analysis clearly suggested canted antiferromagnetic spin ordering at low temperature in our phase separated system. • A phenomenological model has been proposed for experimental results. • The results may be useful to acquire enough information about exchange biased interfaces for various magnetic device applications.

Investigation on multi-frequency oscillations in InGaAs planar Gunn diode with multiple anode-cathode spacings

Science.gov (United States)

Li, B.; Alimi, Y.; Ma, G. L.

2016-12-01

Current oscillations in an AlGaAs/InGaAs/AlGaAs-based two-dimensional electron gas (2DEG)-based hetero-structure have been investigated by means of semiconductor device simulation software SILVACO, with an interest on the charge domain formation at large biases. Single-frequency oscillations are generated in planar Gunn diodes with uniform anode and cathode contacts. The oscillation frequency reduces as the applied bias voltage increases. We show that it is possible to create multiple, independent charge domains in a novel Gunn diode structure with designed multiple anode-cathode spacings. This enables simultaneous generation of multiple frequency oscillations in a single planar device, in contrast to traditional vertical Gunn diodes where only single-frequency oscillations can be achieved. More interestingly, frequency mixing in multiple-channel configured Gunn diodes appeared. This proof-of-concept opens up the possibility for realizing compact self-oscillating mixer at millimeter-wave applications.

Kerr microscopy study of exchange-coupled FePt/Fe exchange spring magnets

Energy Technology Data Exchange (ETDEWEB)

Hussain, Zaineb; Kumar, Dileep [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001 (India); Reddy, V. Raghavendra, E-mail: varimalla@yahoo.com [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001 (India); Gupta, Ajay [Amity Center for Spintronic Materials, Amity University, Noida 201303 (India)

2017-05-15

Magnetization reversal and magnetic microstructure of top soft magnetic layer (Fe) in exchange spring coupled L1{sub 0} FePt/Fe is studied using high resolution Kerr microscopy. With remnant state of the hard magnetic layer (L1{sub 0} FePt) as initial condition, magnetization loops along with magnetic domains are recorded for the top soft magnetic layer (Fe) using Kerr microscopy. Considerable shifting of Fe layer hysteresis loop from center which is similar to exchange bias phenomena is observed. It is also observed that one can tune the magnitude of hysteresis shift by reaching the remanent state from different saturating fields (H{sub SAT}) and also by varying the angle between measuring field and H{sub SAT}. The hysteresis loops and magnetic domains of top soft Fe layer demonstrate unambiguously that soft magnetic layer at remanent state in such exchange coupled system is having unidirectional anisotropy. An analogy is drawn and the observations are explained in terms of established model of exchange bias phenomena framed for field-cooled ferromagnetic - antiferromagnetic bilayer systems. - Highlights: • Kerr microscopy of top soft magnetic Fe layer in exchange spring coupled L1{sub 0} FePt (30 nm)/Fe (22 nm) is reported. • Considerable shifting of Fe layer hysteresis loop from center which is similar to exchange bias phenomena is observed. • Tuneable nature of magnitude of hysteresis shift is shown. • It is unambiguously shown that the top soft Fe magnetic layer at remanent state is having unidirectional anisotropy.

Parallel ferromagnetic resonance and spin-wave excitation in exchange-biased NiFe/IrMn bilayers

Energy Technology Data Exchange (ETDEWEB)

Sousa, Marcos Antonio de, E-mail: marcossharp@gmail.com [Instituto de Física, Universidade Federal de Goiás, Goiânia, 74001-970 (Brazil); Pelegrini, Fernando [Instituto de Física, Universidade Federal de Goiás, Goiânia, 74001-970 (Brazil); Alayo, Willian [Departamento de Física, Universidade Federal de Pelotas, Pelotas, 96010-900 (Brazil); Quispe-Marcatoma, Justiniano; Baggio-Saitovitch, Elisa [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro, 22290-180 (Brazil)

2014-10-01

Ferromagnetic Resonance study of sputtered Ru(7 nm)/NiFe(t{sub FM})/IrMn(6 nm)/Ru(5 nm) exchange-biased bilayers at X and Q-band microwave frequencies reveals the excitation of spin-wave and NiFe resonance modes. Angular variations of the in-plane resonance fields of spin-wave and NiFe resonance modes show the effect of the unidirectional anisotropy, which is about twice larger for the spin-wave mode due to spin pinning at the NiFe/IrMn interface. At Q-band frequency the angular variations of in-plane resonance fields also reveal the symmetry of a uniaxial anisotropy. A modified theoretical model which also includes the contribution of a rotatable anisotropy provides a good description of the experimental results.

Magnetic properties of NiMn{sub 2}O{sub 4−δ} (nickel manganite): Multiple magnetic phase transitions and exchange bias effect

Energy Technology Data Exchange (ETDEWEB)

Tadic, Marin, E-mail: marint@vinca.rs [Condensed Matter Physics Laboratory, Vinca Institute of Nuclear Sciences, University of Belgrade, POB 522, 11001 Belgrade (Serbia); Savic, S.M. [Institute for Multidisciplinary Research, University of Belgrade, Kneza Viseslava 1, 11000 Belgrade (Serbia); Jaglicic, Z. [University of Ljubljana, Faculty of Civil Engineering and Geodesy and Institute of Mathematics, Physics and Mechanics, Jadranska 19, 1000 Ljubljana (Slovenia); Vojisavljevic, K.; Radojkovic, A.; Prsic, S. [Institute for Multidisciplinary Research, University of Belgrade, Kneza Viseslava 1, 11000 Belgrade (Serbia); Nikolic, Dobrica [Department of Physics, University of Belgrade Faculty of Mining and Geology, Belgrade (Serbia)

2014-03-05

Highlights: • We have successfully synthesized NiMn{sub 2}O{sub 4−δ} sample by complex polymerization synthesis. • Magnetic measurements reveal complex properties and triple magnetic phase transitions. • Magnetic measurements of M(H) show hysteretic behavior below 120 K. • Hysteresis properties after cooling of the sample in magnetic field show exchange bias effect. -- Abstract: We present magnetic properties of NiMn{sub 2}O{sub 4−δ} (nickel manganite) which was synthesized by complex polymerization synthesis method followed by successive heat treatment and final calcinations in air at 1200 °C. The sample was characterized by using X-ray powder diffractometer (XRPD), scanning electron microscopy (SEM), field-emission scanning electron microscopy (FE-SEM) and superconducting quantum interference device (SQUID) magnetometer. The XRPD and FE-SEM studies revealed NiMn{sub 2}O{sub 4−δ} phase and good crystallinity of particles. No other impurities have been observed by XRPD. The magnetic properties of the sample have been studied by measuring the temperature and field dependence of magnetization. Magnetic measurements of M(T) reveal rather complex magnetic properties and multiple magnetic phase transitions. We show three magnetic phase transitions with transition temperatures at T{sub M1} = 35 K (long-range antiferromagnetic transition), T{sub M2} = 101 K (antiferromagnetic-type transition) and T{sub M3} = 120 K (ferromagnetic-like transition). We found that the T{sub M1} transition is strongly dependent on the strength of the applied magnetic field (T{sub M1} decreases with increasing applied field) whereas the T{sub M3} is field independent. Otherwise, the T{sub M2} maximum almost disappears in higher applied magnetic fields (H = 1 kOe and 10 kOe). Magnetic measurements of M(H) show hysteretic behavior below T{sub M3}. Moreover, hysteresis properties measured after cooling of the sample in magnetic field of 10 kOe show exchange bias effect with an

Realization of the Axion Insulator State in Quantum Anomalous Hall Sandwich Heterostructures

Science.gov (United States)

Xiao, Di; Jiang, Jue; Shin, Jae-Ho; Wang, Wenbo; Wang, Fei; Zhao, Yi-Fan; Liu, Chaoxing; Wu, Weida; Chan, Moses H. W.; Samarth, Nitin; Chang, Cui-Zu

2018-02-01

The "magnetoelectric effect" arises from the coupling between magnetic and electric properties in materials. The Z2 invariant of topological insulators (TIs) leads to a quantized version of this phenomenon, known as the topological magnetoelectric (TME) effect. This effect can be realized in a new topological phase called an "axion insulator" whose surface states are all gapped but the interior still obeys time reversal symmetry. We demonstrate such a phase using electrical transport measurements in a quantum anomalous Hall (QAH) sandwich heterostructure, in which two compositionally different magnetic TI layers are separated by an undoped TI layer. Magnetic force microscopy images of the same sample reveal sequential magnetization reversals of the top and bottom layers at different coercive fields, a consequence of the weak interlayer exchange coupling due to the spacer. When the magnetization is antiparallel, both the Hall resistance and Hall conductance show zero plateaus, accompanied by a large longitudinal resistance and vanishing longitudinal conductance, indicating the realization of an axion insulator state. Our findings thus show evidence for a phase of matter distinct from the established QAH state and provide a promising platform for the realization of the TME effect.

Observation of giant exchange bias in bulk Mn{sub 50}Ni{sub 42}Sn{sub 8} Heusler alloy

Energy Technology Data Exchange (ETDEWEB)

Sharma, Jyoti; Suresh, K. G., E-mail: suresh@iitb.ac.in [Magnetic Materials Laboratory, Department of Physics, Indian institute of Technology Bombay, Mumbai, Maharashtra 400076 (India)

2015-02-16

We report a giant exchange bias (EB) field of 3520 Oe in bulk Mn{sub 50}Ni{sub 42}Sn{sub 8} Heusler alloy. The low temperature magnetic state of the martensite phase has been studied by DC magnetization and AC susceptibility measurements. Frequency dependence of spin freezing temperature (T{sub f}) on critical slowing down relation and observation of memory effect in zero field cooling mode confirms the super spin glass (SSG) phase at low temperatures. Large EB is attributed to the strong exchange coupling between the SSG clusters formed by small regions of ferromagnetic order embedded in an antiferromagnetic (AFM) matrix. The temperature and cooling field dependence of EB have been studied and related to the change in unidirectional anisotropy at SSG/AFM interface. The training effect also corroborates with the presence of frozen (SSG) moments at the interface and their role in EB.

Tunable negative differential resistance in planar graphene superlattice resonant tunneling diode

Science.gov (United States)

Sattari-Esfahlan, S. M.; Fouladi-Oskuei, J.; Shojaei, S.

2017-04-01

Here, we study the negative differential resistance (NDR) of Dirac electrons in biased planar graphene superlattice (PGSL) and investigate the transport characteristics by adopted transfer matrix method within Landauer-Buttiker formalism. Our model device is based on one-dimensional Kronig-Penney type electrostatic potential in monolayer graphene deposited on a substrate, where the bias voltage is applied by two electrodes in the left and right. At Low bias voltages, we found that NDR appears due to breaking of minibands to Wannier-Stark ladders (WSLs). At the critical bias voltage, delocalization appeared by WS states leads to tunneling peak current in current-voltage (I-V) characteristics. With increasing bias voltage, crossing of rungs from various WSL results in multi-peak NDR. The results demonstrate that the structure parameters like barrier/well thickness and barrier height have remarkable effect on I-V characteristics of PGSL. In addition, Dirac gap enhances peak to valley (PVR) value due to suppressing Klein tunneling. Our results show that the tunable PVR in PGSL resonant tunneling diode can be achievable by structure parameters engineering. NDR at ultra-low bias voltages, such as 100 mV, with giant PVR of 20 is obtained. In our device, the multiple same NDR peaks with ultra-low bias voltage provide promising prospect for multi-valued memories and the low power nanoelectronic tunneling devices.

Not your grandfather's concert hall

Science.gov (United States)

Cooper, Russell; Malenka, Richard; Griffith, Charles; Friedlander, Steven

2004-05-01

The opening of Judy and Arthur Zankel Hall on 12 September 2003, restores Andrew Carnegie's original 1891 concept of having three outstanding auditoriums of different sizes under one roof, and creates a 21st-century venue for music performance and education. With concerts ranging from early music to avant-garde multimedia productions, from jazz to world music, and from solo recitals to chamber music, Zankel Hall expands the breadth and depth of Carnegie Hall's offerings. It allows for the integration of programming across three halls with minifestivals tailored both to the size and strengths of each hall and to the artists and music to be performed. The new flexible space also provides Carnegie Hall with an education center equipped with advanced communications technology. This paper discusses the unique program planned for this facility and how the architects, theatre consultants, and acousticians developed a design that fulfilled the client's expectations and coordinated the construction of the facility under the floor of the main Isaac Stern Auditorium without having to cancel a single performance.

Insights into operation of planar tri-gate tunnel field effect transistor for dynamic memory application

Science.gov (United States)

Navlakha, Nupur; Kranti, Abhinav

2017-07-01

Insights into device physics and operation through the control of energy barriers are presented for a planar tri-gate Tunnel Field Effect Transistor (TFET) based dynamic memory. The architecture consists of a double gate (G1) at the source side and a single gate (G2) at the drain end of the silicon film. Dual gates (G1) effectively enhance the tunneling based read mechanism through the enhanced coupling and improved electrostatic control over the channel. The single gate (G2) controls the holes in the potential barrier induced through the proper selection of bias and workfunction. The results indicate that the planar tri-gate achieves optimum performance evaluated in terms of two composite metrics (M1 and M2), namely, product of (i) Sense Margin (SM) and Retention Time (RT) i.e., M1 = SM × RT and (ii) Sense Margin and Current Ratio (CR) i.e., M2 = SM × CR. The regulation of barriers created by the gates (G1 and G2) through the optimal use of device parameters leads to better performance metrics, with significant improvement at scaled lengths as compared to other tunneling based dynamic memory architectures. The investigation shows that lengths of G1, G2 and lateral spacing can be scaled down to 25 nm, 50 nm, and 30 nm, respectively, while achieving reasonable values for (M1, M2). The work demonstrates a systematic approach to showcase the advancement in TFET based Dynamic Random Access Memory (DRAM) through the use of planar tri-gate topology at a lower bias value. The concept, design, and operation of planar tri-gate architecture provide valuable viewpoints for TFET based DRAM.

Magnetization dynamics of perpendicular exchange-biased (Pt/Co)-Pt-IrMn multilayers studied by MOKE microscopy and magnetometry

Energy Technology Data Exchange (ETDEWEB)

Czapkiewicz, M.; Stobiecki, T.; Rak, R.; Zoladz, M.; Mietniowski, P. [Department of Electronics, AGH University of Science and Technology, 30-059 Krakow (Poland); Dijken, S. van [SFI Trinity Nanoscience Laboratory, Physics Department, Trinity College, Dublin 2 (Ireland)

2006-01-01

In this paper the dynamics of the magnetization reversal process in perpendicularly biased [20 Aa Pt/5 Aa Co]{sub 3}/t Aa Pt/100 Aa IrMn/20 Aa Pt multilayers with different Pt insertion layer thickness (0 Aa{<=}t{<=}12 Aa) is studied. The insertion of 1 Aa thick Pt enhances the exchange bias field (H{sub ex}) and for t>3 Aa H{sub ex} decreases exponentially with increasing Pt layer thickness. We show by magnetization relaxation measurements and direct observation of magnetic domains that magnetization reversal takes place by the nucleation of isolated cylindrical domains with a different nucleation site density in the forward and backward branches of the hysteresis loop. All the results were quantitatively analyzed using the Fatuzzo model for the dynamics of domain reversal processes. The activation energies for magnetization reversal by domain nucleation and domain propagation were determined. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Non-planar corrections to the Pomeron and reggeons in the dual unitarity scheme

International Nuclear Information System (INIS)

Uschersohn, J.

1976-03-01

A special class of non-planar diagrams is studied, those in which the produced clusters are crossed. Insertion of these diagrams in the reggeon propagators accounts for exchange degeneracy breaking. The even signature reggeons get their intercept promoted to a larger value, while the odd signature ones are left unchanged. (author)

Exchange bias in (La,Ca)MnO3 bilayers: influence of cooling process

International Nuclear Information System (INIS)

Restrepo-Parra, E; Agudelo, J D; Restrepo, J

2012-01-01

The exchange bias (EB) phenomenon in La 2/3 Ca 1/3 MnO 3 /La 1/3 Ca 2/3 MnO 3 bilayers was studied using Monte Carlo simulations combined with the Heisenberg model and the Metropolis algorithm. These simulations were carried out using the model proposed by Kiwi for an uncompensated interface. The Hamiltonian considered several terms corresponding to the nearest neighbor interaction, magnetocrystalline anisotropy and Zeeman effect. Several interactions in the ferromagnetic (FM), antiferromagnetic (AFM) and FM/AFM interface were considered, depending on the type of interacting ion (Mn 3+eg , Mn 3+eg′ or Mn 4+d3 ). The influence of field cooling and cooling temperature on the EB was analyzed and discussed. Regarding the field cooling, it caused an increase in the EB until a certain critical value was reached. After that, its effect was almost negligible. On the other hand, at low values of cooling temperature, not only the EB but also the coercive field were enhanced. (paper)

Thickness and bilayer number dependence on exchange bias in ferromagnetic/antiferromagnetic multilayers based on La{sub 1−x}Ca{sub x}MnO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Restrepo-Parra, E., E-mail: erestrepopa@unal.edu.co [Departamento de Física y Química, Universidad Nacional de Colombia-Sede Manizales, A.A. 127 Manizales (Colombia); Agudelo-Giraldo, J.D. [Departamento de Física y Química, Universidad Nacional de Colombia-Sede Manizales, A.A. 127 Manizales (Colombia); Grupo de Investigación y Desarrollo en Informática y Telecomunicaciones, Universidad de Manizales, Manizales (Colombia); Restrepo, J. [Grupo de Magnetismo y Simulación, Instituto de Física, Universidad de Antioquia, A.A. 1226 Medellín (Colombia)

2014-05-01

In this work, simulations of ferromagnetic/antiferromagnetic multilayers of La{sub 1−x}Ca{sub x}MnO{sub 3} have been carried out by using the Monte Carlo method combined with the Metropolis algorithm and the classical Heisenberg model. In the Hamiltonian we have considered three contributions: nearest neighbor exchange interaction, magnetocrystalline anisotropy and Zeeman interaction. Samples were built by including three types of Mn ions depending on their valence state and type of ionic orbital. Both the number of layers and the antiferromagnetic layer thickness influence on the exchange bias phenomenon are analyzed. Hysteresis loops results exhibit not only a shift as evidence of exchange bias but also the formation of plateaus or steps caused by the presence of more than one interface and the low layers thickness. Each layer presents a strong magnetic behavior because the magneto static energy favors formation of multi-domains in contrast with the single-domains of a single layer FM producing one sub-Loop of each domain (each layer). On the other hand, as the number of layers (n) increases, the sub-cycles tend to disappear. As the plateaus disappear, the system is more effective, increasing the coercive and bias fields. Moreover, domain sizes (layers thickness) also affect the shape of the hysteresis loop. On increasing the thickness of the AFM layer, a decrease in the plateaus produced by the uncoupling is generated.

Report of experimental hall subworking group

International Nuclear Information System (INIS)

Miyake, K.; Ohama, T.; Takahashi, K.

1982-01-01

The general plan of constructing the TRISTAN e + e - colliding beam experimental halls may be divided into two parts. The first step is to construct two test-experimental halls associated with the 6.5 GeV x 6.5 GeV e + e - accumulator ring, and the second step is to build four experimental halls at the 30 GeV x 30 GeV e + e - TRISTAN main ring. At this workshop, extensive discussions on the detailed design of the four main ring experimental halls have been made. Four experimental areas will be built at the main ring, and two test-experimental halls at the accumulating ring. Among the four areas at the main ring, two will be used for electron-proton possible as well as electron-positron colliding beam experiment. The other two will be used exclusively for e + e - colliding experiments. Only a preliminary design has been made for these four experimental areas. A tentative plan of a larger experimental hall includes a counting and data processing room, a utility room, and a radiation safety control room. Two smaller halls have simpler structure. The figures of the experimental halls are presented. The two test-experimental halls at the accumulator ring will be used to test the detectors for e + e - colliding experiments before the final installation. The utility rooms designed for the halls are used to supply coolant and electric power of superconducting magnets. At the workshop, various ideas concerning the preliminary plan are presented. (Kato, T.)

75 FR 7467 - Gary E. Hall and Rita C. Hall; Notice of Application Accepted for Filing With the Commision...

Science.gov (United States)

2010-02-19

... Rita C. Hall; Notice of Application Accepted for Filing With the Commision, Soliciting Motions To.... Project No.: 13652-000. c. Date filed: January 11, 2010. d. Applicant: Gary E. Hall and Rita C. Hall. e... Policies Act of 1978, 16 U.S.C. 2705, 2708. h. Applicant Contact: Mr. Gary E. Hall and Ms. Rita C. Hall, P...

Direct current modulation of spin-Hall-induced spin torque ferromagnetic resonance in platinum/permalloy bilayer thin films

Science.gov (United States)

Hirayama, Shigeyuki; Mitani, Seiji; Otani, YoshiChika; Kasai, Shinya

2018-06-01

We examined the spin-Hall-induced spin torque ferromagnetic resonance (ST-FMR) in platinum/permalloy bilayer thin films under bias direct current (DC). The bias DC modulated the symmetric components of the ST-FMR spectra, while no dominant modulation was found in the antisymmetric components. A detailed analysis in combination with simple model calculations clarified that the major origin of the modulation can be attributed to the DC resistance change under the precessional motion of magnetization. This effect is the second order contribution for the precession angle, even though the contribution can be comparable to the rectification voltage under some specific conditions.

Hall Effect Gyrators and Circulators

Science.gov (United States)

Viola, Giovanni; DiVincenzo, David P.

2014-04-01

The electronic circulator and its close relative the gyrator are invaluable tools for noise management and signal routing in the current generation of low-temperature microwave systems for the implementation of new quantum technologies. The current implementation of these devices using the Faraday effect is satisfactory but requires a bulky structure whose physical dimension is close to the microwave wavelength employed. The Hall effect is an alternative nonreciprocal effect that can also be used to produce desired device functionality. We review earlier efforts to use an Ohmically contacted four-terminal Hall bar, explaining why this approach leads to unacceptably high device loss. We find that capacitive coupling to such a Hall conductor has much greater promise for achieving good circulator and gyrator functionality. We formulate a classical Ohm-Hall analysis for calculating the properties of such a device, and show how this classical theory simplifies remarkably in the limiting case of the Hall angle approaching 90°. In this limit, we find that either a four-terminal or a three-terminal capacitive device can give excellent circulator behavior, with device dimensions far smaller than the ac wavelength. An experiment is proposed to achieve GHz-band gyration in millimeter (and smaller) scale structures employing either semiconductor heterostructure or graphene Hall conductors. An inductively coupled scheme for realizing a Hall gyrator is also analyzed.

Phase coexistence and exchange-bias effect in LiM n2O4 nanorods

Science.gov (United States)

Zhang, X. K.; Yuan, J. J.; Xie, Y. M.; Yu, Y.; Kuang, F. G.; Yu, H. J.; Zhu, X. R.; Shen, H.

2018-03-01

In this paper, the magnetic properties of LiM n2O4 nanorods with an average diameter of ˜100 nm and length of ˜1 μ m are investigated. The temperature dependences of dc and ac susceptibility measurements show that LiM n2O4 nanorods experience multiple magnetic phase transitions upon cooling, i.e., paramagnetic (PM), antiferromagnetic (AFM), canted antiferromagnetic (CAFM), and cluster spin glass (SG). The coexistence between a long-range ordered AFM phase due to a M n4 +-M n4 + interaction and a cluster SG phase originating from frozen AFM clusters at low temperature in LiM n2O4 nanorods is elucidated. Field-cooled hysteresis loops (FC loops) and magnetic training effect (TE) measurements confirm the presence of an exchange-bias (EB) effect in LiM n2O4 nanorods below the Néel temperature (TN˜60 K ) . Furthermore, by analyzing the TE, we conclude that the observed EB effect originates completely from an exchange coupling interaction at the interface between the AFM and cluster SG states. A phenomenological model based on phase coexistence is proposed to interpret the origin of the EB effect below 60 K in the present compound. In turn, the appearance of the EB effect further supports the coexistence of AFM order along with a cluster SG state in LiM n2O4 nanorods.

Temperature dependence magnetic properties and exchange bias effect in CuFe{sub 2}O{sub 4} nanoparticles embedded in NiO matrix

Energy Technology Data Exchange (ETDEWEB)

Ali, Kashif [Physics Department, Quaid-i-Azam University, Islamabad (Pakistan); Physics Department, International Islamic University, Islamabad (Pakistan); Physics Department, University of Gujrat, Gujrat (Pakistan); Sarfraz, A.K., E-mail: sarfraz.ak1@gmail.com [Physics Department, Quaid-i-Azam University, Islamabad (Pakistan); Physics Department, International Islamic University, Islamabad (Pakistan); Physics Department, University of Gujrat, Gujrat (Pakistan); Ali, Atif; Mumtaz, A.; Hasanain, S.K. [Physics Department, Quaid-i-Azam University, Islamabad (Pakistan); Physics Department, International Islamic University, Islamabad (Pakistan); Physics Department, University of Gujrat, Gujrat (Pakistan)

2014-11-15

The effect of temperature on the magnetic properties of CuFe{sub 2}O{sub 4}/NiO nanocomposites of (1−x) NiO/xCuFe{sub 2}O{sub 4} (x=0.5) has been investigated. The (1−x)NiO/xCuFe{sub 2}O{sub 4} (x=0.5) nanoparticles were synthesized by co-precipitation route and their crystallographic structure was confirmed through X-ray diffraction (XRD) analysis. The average crystallite sizes of the nanoparticles as determined from the XRD were found to lie in the range of 20–31 nm. Magnetic characterization including coercivity and magnetization were measured with effect of particle size and temperature. During magnetic measurement it is observed that the hysteresis loop displaces along negative field axis with exchange bias field (H{sub EB}) about 75 Oe at 5 K and vanish at 150 K which is irreversible temperature T{sub irr}. The temperature dependence of coercively follows Kneller's law while the saturation magnetization followed Bloch's law with exponent α=3/2. - Highlights: • Synthesis of (1−x)NiO/xCuFe{sub 2}O{sub 4} (x=0.5) nanoparticles by co-precipitation route. • Magnetic characterization with particle size and temperature variation. • Exchange bias effect: monotonic decrease in exchange field with temperature. • Temperature dependence of coercivity follows Kneller's law. • Temperature dependence of saturation magnetization follows Bloch's law.

Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs

International Nuclear Information System (INIS)

Luo Jie-Xin; Chen Jing; Zhou Jian-Hua; Wu Qing-Qing; Chai Zhan; Yu Tao; Wang Xi

2012-01-01

The hysteresis effect in the output characteristics, originating from the floating body effect, has been measured in partially depleted (PD) silicon-on-insulator (SOI) MOSFETs at different back-gate biases. I D hysteresis has been developed to clarify the hysteresis characteristics. The fabricated devices show the positive and negative peaks in the I D hysteresis. The experimental results show that the I D hysteresis is sensitive to the back gate bias in 0.13-μm PD SOI MOSFETs and does not vary monotonously with the back-gate bias. Based on the steady-state Shockley-Read-Hall (SRH) recombination theory, we have successfully interpreted the impact of the back-gate bias on the hysteresis effect in PD SOI MOSFETs. (condensed matter: structural, mechanical, and thermal properties)

Spin Hall effects

Science.gov (United States)

Sinova, Jairo; Valenzuela, Sergio O.; Wunderlich, J.; Back, C. H.; Jungwirth, T.

2015-10-01

Spin Hall effects are a collection of relativistic spin-orbit coupling phenomena in which electrical currents can generate transverse spin currents and vice versa. Despite being observed only a decade ago, these effects are already ubiquitous within spintronics, as standard spin-current generators and detectors. Here the theoretical and experimental results that have established this subfield of spintronics are reviewed. The focus is on the results that have converged to give us the current understanding of the phenomena, which has evolved from a qualitative to a more quantitative measurement of spin currents and their associated spin accumulation. Within the experimental framework, optical-, transport-, and magnetization-dynamics-based measurements are reviewed and linked to both phenomenological and microscopic theories of the effect. Within the theoretical framework, the basic mechanisms in both the extrinsic and intrinsic regimes are reviewed, which are linked to the mechanisms present in their closely related phenomenon in ferromagnets, the anomalous Hall effect. Also reviewed is the connection to the phenomenological treatment based on spin-diffusion equations applicable to certain regimes, as well as the spin-pumping theory of spin generation used in many measurements of the spin Hall angle. A further connection to the spin-current-generating spin Hall effect to the inverse spin galvanic effect is given, in which an electrical current induces a nonequilibrium spin polarization. This effect often accompanies the spin Hall effect since they share common microscopic origins. Both can exhibit the same symmetries when present in structures comprising ferromagnetic and nonmagnetic layers through their induced current-driven spin torques or induced voltages. Although a short chronological overview of the evolution of the spin Hall effect field and the resolution of some early controversies is given, the main body of this review is structured from a pedagogical

Topological honeycomb magnon Hall effect: A calculation of thermal Hall conductivity of magnetic spin excitations

Energy Technology Data Exchange (ETDEWEB)

Owerre, S. A., E-mail: solomon@aims.ac.za [African Institute for Mathematical Sciences, 6 Melrose Road, Muizenberg, Cape Town 7945, South Africa and Perimeter Institute for Theoretical Physics, 31 Caroline St. N., Waterloo, Ontario N2L 2Y5 (Canada)

2016-07-28

Quite recently, the magnon Hall effect of spin excitations has been observed experimentally on the kagome and pyrochlore lattices. The thermal Hall conductivity κ{sup xy} changes sign as a function of magnetic field or temperature on the kagome lattice, and κ{sup xy} changes sign upon reversing the sign of the magnetic field on the pyrochlore lattice. Motivated by these recent exciting experimental observations, we theoretically propose a simple realization of the magnon Hall effect in a two-band model on the honeycomb lattice. The magnon Hall effect of spin excitations arises in the usual way via the breaking of inversion symmetry of the lattice, however, by a next-nearest-neighbour Dzyaloshinsky-Moriya interaction. We find that κ{sup xy} has a fixed sign for all parameter regimes considered. These results are in contrast to the Lieb, kagome, and pyrochlore lattices. We further show that the low-temperature dependence on the magnon Hall conductivity follows a T{sup 2} law, as opposed to the kagome and pyrochlore lattices. These results suggest an experimental procedure to measure thermal Hall conductivity within a class of 2D honeycomb quantum magnets and ultracold atoms trapped in a honeycomb optical lattice.

Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se2 thin films for solar cells - a review

International Nuclear Information System (INIS)

Abou-Ras, Daniel; Schmidt, Sebastian S.; Schaefer, Norbert; Kavalakkatt, Jaison; Rissom, Thorsten; Unold, Thomas; Mainz, Roland; Weber, Alfons; Kirchartz, Thomas; Simsek Sanli, Ekin; Aken, Peter A. van; Ramasse, Quentin M.; Kleebe, Hans-Joachim; Azulay, Doron; Balberg, Isaac; Millo, Oded; Cojocaru-Miredin, Oana; Barragan-Yani, Daniel; Albe, Karsten; Haarstrich, Jakob; Ronning, Carsten

2016-01-01

The present review gives an overview of the various reports on properties of line and planar defects in Cu(In,Ga)(S,Se) 2 thin films for high-efficiency solar cells. We report results from various analysis techniques applied to characterize these defects at different length scales, which allow for drawing a consistent picture on structural and electronic defect properties. A key finding is atomic reconstruction detected at line and planar defects, which may be one mechanism to reduce excess charge densities and to relax deep-defect states from midgap to shallow energy levels. On the other hand, nonradiative Shockley-Read-Hall recombination is still enhanced with respect to defect-free grain interiors, which is correlated with substantial reduction of luminescence intensities. Comparison of the microscopic electrical properties of planar defects in Cu(In,Ga)(S,Se) 2 thin films with two-dimensional device simulations suggest that these defects are one origin of the reduced open-circuit voltage of the photovoltaic devices. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

InGaAs-based planar barrier diode as microwave rectifier

Science.gov (United States)

Farhani Zakaria, Nor; Rizal Kasjoo, Shahrir; Zailan, Zarimawaty; Mohamad Isa, Muammar; Arshad, Mohd Khairuddin Md; Taking, Sanna

2018-06-01

In this report, we proposed and simulated a new planar nonlinear rectifying device fabricated using InGaAs substrate and referred to as a planar barrier diode (PBD). Using an asymmetrical inverse-arrowhead-shaped structure between the electrodes, a nonuniform depletion region is developed, which creates a triangular energy barrier in the conducting channel. This barrier is voltage dependent and can be controlled by the applied voltage across the PBD, thus resulting in nonlinear diode-like current–voltage characteristics; thus it can be used as a rectifying device. The PBD’s working principle is explained using thermionic emission theory. Furthermore, by varying the PBD’s geometric design, the asymmetry of the current–voltage characteristics can be optimized to realize superior rectification performance. By employing the optimized structural parameters, the obtained cut-off frequency of the device was approximately 270 GHz with a curvature coefficient peak of 14 V‑1 at a low DC bias voltage of 50 mV.

Amorphous FeCoSiB for exchange bias coupled and decoupled magnetoelectric multilayer systems: Real-structure and magnetic properties

International Nuclear Information System (INIS)

Hrkac, V.; Strobel, J.; Kienle, L.; Lage, E.; Köppel, G.; McCord, J.; Quandt, E.; Meyners, D.

2014-01-01

The effect of field annealing for exchanged biased multilayer films is studied with respect to the resultant structural and magnetic film properties. The presented multilayer stacks comprise repeating sequences of Ta/Cu/(1 1 1) textured antiferromagnetic Mn 70 Ir 30 /amorphous ferromagnetic Fe 70.2 Co 7.8 Si 12 B 10 . Within the ferromagnetic layers crystalline filaments are observed. An additional Ta layer between the antiferromagnet and ferromagnet is used in order to investigate and separate the influence of the common Mn 70 Ir 30 /Fe 70.2 Co 7.8 Si 12 B 10 interface on the occurring filaments and structural changes. In situ and ex situ transmission electron microscopy is used for a comprehensive structure characterization of multilayer stacks for selected temperature stages. Up to 250 °C, the multilayers are structurally unaltered and preserve the as-deposited condition. A deliberate increase to 350 °C exhibits different crystallization processes for the films, depending on the presence of crystal nuclei within the amorphous ferromagnetic layer. The influence of volume-to-surface ratio of the multilayer stacks to the crystallization process is emphasized by the comparison of in situ and ex situ investigations as the respective specimen thickness is changed. Complementary magnetic studies reveal a defined exchange bias obtained at the first annealing step and a decrease of total anisotropy field with partial crystallization after the subsequent annealing at 350 °C.

Quantum hall effect. A perspective

International Nuclear Information System (INIS)

Aoki, Hideo

2006-01-01

Novel concepts and phenomena are emerging recently in the physics of quantum Hall effect. This article gives an overview, which starts from the fractional quantum Hall system viewed as an extremely strongly correlated system, and move on to present various phenomena involving internal degrees of freedom (spin and layer), non-equilibrium and optical properties, and finally the spinoff to anomalous Hall effect and the rotating Bose-Einstein condensate. (author)

Hall viscosity of hierarchical quantum Hall states

Science.gov (United States)

Fremling, M.; Hansson, T. H.; Suorsa, J.

2014-03-01

Using methods based on conformal field theory, we construct model wave functions on a torus with arbitrary flat metric for all chiral states in the abelian quantum Hall hierarchy. These functions have no variational parameters, and they transform under the modular group in the same way as the multicomponent generalizations of the Laughlin wave functions. Assuming the absence of Berry phases upon adiabatic variations of the modular parameter τ, we calculate the quantum Hall viscosity and find it to be in agreement with the formula, given by Read, which relates the viscosity to the average orbital spin of the electrons. For the filling factor ν =2/5 Jain state, which is at the second level in the hierarchy, we compare our model wave function with the numerically obtained ground state of the Coulomb interaction Hamiltonian in the lowest Landau level, and find very good agreement in a large region of the complex τ plane. For the same example, we also numerically compute the Hall viscosity and find good agreement with the analytical result for both the model wave function and the numerically obtained Coulomb wave function. We argue that this supports the notion of a generalized plasma analogy that would ensure that wave functions obtained using the conformal field theory methods do not acquire Berry phases upon adiabatic evolution.

Spin Hall effect by surface roughness

KAUST Repository

Zhou, Lingjun

2015-01-08

The spin Hall and its inverse effects, driven by the spin orbit interaction, provide an interconversion mechanism between spin and charge currents. Since the spin Hall effect generates and manipulates spin current electrically, to achieve a large effect is becoming an important topic in both academia and industries. So far, materials with heavy elements carrying a strong spin orbit interaction, provide the only option. We propose here a new mechanism, using the surface roughness in ultrathin films, to enhance the spin Hall effect without heavy elements. Our analysis based on Cu and Al thin films suggests that surface roughness is capable of driving a spin Hall angle that is comparable to that in bulk Au. We also demonstrate that the spin Hall effect induced by surface roughness subscribes only to the side-jump contribution but not the skew scattering. The paradigm proposed in this paper provides the second, not if only, alternative to generate a sizable spin Hall effect.

KOREKSI BIAS BETA SAHAM DI BURSA EFEK INDONESIA PERIODE 2009-2012

Directory of Open Access Journals (Sweden)

Indah Saptorini

2016-04-01

Full Text Available This  study  aims  to  determine  whether  the  beta  value  of  shares  listed  on  the Indonesia Stock Exchange (BEI is a bias beta due to nonsynchronous trading activities.  There  are  310  companies  listed  on  the  Stock  Exchange  2009-2012 period  sampled  in  this  study.  The  bias  needs  to  be  corrected.  From  three methods employed : the Scholes and Williams (1977, the Dimson (1979, and the Fowler and Rorke (1983. Results of the analysis conclude that the shares on the Stock Exchange has a bias beta caused by not having a securities trading for  some  time.  This  resulted  in  the  calculation  of  IHSG  the  period  of  t  was biased because it uses the closing price of the period t-1.  In  this  study  bias  beta  correction  method  Scholes  and  Williams  (1977,  both one lag one lead and two lag two lead are better than the bias beta correction method Dimson (1979 and the bias beta correction method Fowler and Rorke (1983 because the value of beta Scholes and Williams after corrected close to one. Keywords : Nonsynchronous tradings, thin tradings, bias

Exchange coupling and magnetic anisotropy of exchanged-biased quantum tunnelling single-molecule magnet Ni3Mn2 complexes using theoretical methods based on Density Functional Theory.

Science.gov (United States)

Gómez-Coca, Silvia; Ruiz, Eliseo

2012-03-07

The magnetic properties of a new family of single-molecule magnet Ni(3)Mn(2) complexes were studied using theoretical methods based on Density Functional Theory (DFT). The first part of this study is devoted to analysing the exchange coupling constants, focusing on the intramolecular as well as the intermolecular interactions. The calculated intramolecular J values were in excellent agreement with the experimental data, which show that all the couplings are ferromagnetic, leading to an S = 7 ground state. The intermolecular interactions were investigated because the two complexes studied do not show tunnelling at zero magnetic field. Usually, this exchange-biased quantum tunnelling is attributed to the presence of intermolecular interactions calculated with the help of theoretical methods. The results indicate the presence of weak intermolecular antiferromagnetic couplings that cannot explain the ferromagnetic value found experimentally for one of the systems. In the second part, the goal is to analyse magnetic anisotropy through the calculation of the zero-field splitting parameters (D and E), using DFT methods including the spin-orbit effect.

Gauge invariance and fractional quantized Hall effect

International Nuclear Information System (INIS)

Tao, R.; Wu, Y.S.

1984-01-01

It is shown that gauge invariance arguments imply the possibility of fractional quantized Hall effect; the Hall conductance is accurately quantized to a rational value. The ground state of a system showing the fractional quantized Hall effect must be degenerate; the non-degenerate ground state can only produce the integral quantized Hall effect. 12 references

Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se{sub 2} thin films for solar cells - a review

Energy Technology Data Exchange (ETDEWEB)

Abou-Ras, Daniel; Schmidt, Sebastian S.; Schaefer, Norbert; Kavalakkatt, Jaison; Rissom, Thorsten; Unold, Thomas; Mainz, Roland; Weber, Alfons [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109, Berlin (Germany); Kirchartz, Thomas [Forschungszentrum Juelich, Institut fuer Energie- und Klimaforschung (IEK-5), Photovoltaik, 52428, Juelich (Germany); Simsek Sanli, Ekin; Aken, Peter A. van [Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart (Germany); Ramasse, Quentin M. [SuperSTEM Laboratory, SciTech Daresbury Campus, Keckwick Lane, Daresbury, WA4 4AD (United Kingdom); Kleebe, Hans-Joachim [Technische Universitaet Darmstadt, Institut fuer Angewandte Geowissenschaften, Schnittspahnstrasse 9, 64287, Darmstadt (Germany); Azulay, Doron; Balberg, Isaac; Millo, Oded [Racah Institute of Physics, The Hebrew University of Jerusalem, Jerusalem, 91904 (Israel); Cojocaru-Miredin, Oana [RWTH Aachen, Physikalisches Institut IA, Sommerfeldstr. 14, 52074, Aachen (Germany); Barragan-Yani, Daniel; Albe, Karsten [Technische Universitaet Darmstadt, FG Materialmodellierung, Jovanka-Bontschits-Str. 2, 64287, Darmstadt (Germany); Haarstrich, Jakob; Ronning, Carsten [Institut fuer Festkoerperphysik, Friedrich Schiller Universitaet Jena, Max-Wien-Platz 1, 07743, Jena (Germany)

2016-05-15

The present review gives an overview of the various reports on properties of line and planar defects in Cu(In,Ga)(S,Se){sub 2} thin films for high-efficiency solar cells. We report results from various analysis techniques applied to characterize these defects at different length scales, which allow for drawing a consistent picture on structural and electronic defect properties. A key finding is atomic reconstruction detected at line and planar defects, which may be one mechanism to reduce excess charge densities and to relax deep-defect states from midgap to shallow energy levels. On the other hand, nonradiative Shockley-Read-Hall recombination is still enhanced with respect to defect-free grain interiors, which is correlated with substantial reduction of luminescence intensities. Comparison of the microscopic electrical properties of planar defects in Cu(In,Ga)(S,Se){sub 2} thin films with two-dimensional device simulations suggest that these defects are one origin of the reduced open-circuit voltage of the photovoltaic devices. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

The bremsstrahlung tagged photon beam in Hall B at JLab

CERN Document Server

Sober, D I; Longhi, A; Matthews, S K; O'Brien, J T; Berman, B L; Briscoe, W J; Cole, P L; Connelly, J P; Dodge, W R; Murphy, L Y; Philips, S A; Dugger, M K; Lawrence, D; Ritchie, B G; Smith, E S; Lambert, J M; Anciant, E; Audit, G; Auger, T; Marchand, C; Klusman, M; Napolitano, J; Khandaker, M A; Salgado, C W; Sarty, A J

2000-01-01

We describe the design and commissioning of the photon tagging beamline installed in experimental Hall B at the Thomas Jefferson National Accelerator Facility (JLab). This system can tag photon energies over a range from 20% to 95% of the incident electron energy, and is capable of operation with beam energies up to 6.1 GeV. A single dipole magnet is combined with a hodoscope containing two planar arrays of plastic scintillators to detect energy-degraded electrons from a thin bremsstrahlung radiator. The first layer of 384 partially overlapping small scintillators provides photon energy resolution, while the second layer of 61 larger scintillators provides the timing resolution necessary to form a coincidence with the corresponding nuclear interaction triggered by the tagged photon. The definitions of overlap channels in the first counter plane and of geometric correlation between the two planes are determined using digitized time information from the individual counters. Auxiliary beamline devices are briefl...

Topologically induced fractional Hall steps in the integer quantum Hall regime of MoS 2

Science.gov (United States)

Firoz Islam, SK; Benjamin, Colin

2016-09-01

The quantum magnetotransport properties of a monolayer of molybdenum disulfide are derived using linear response theory. In particular, the effect of topological terms on longitudinal and Hall conductivity is analyzed. The Hall conductivity exhibits fractional steps in the integer quantum Hall regime. Further complete spin and valley polarization of the longitudinal conductivitity is seen in presence of these topological terms. Finally, the Shubnikov-de Hass oscillations are suppressed or enhanced contingent on the sign of these topological terms.

Transport properties in monolayer-bilayer-monolayer graphene planar junctions

Institute of Scientific and Technical Information of China (English)

Kai-Long Chu; Zi-Bo Wang; Jiao-Jiao Zhou; Hua Jiang

2017-01-01

The transport study of graphene based junctions has become one of the focuses in graphene research.There are two stacking configurations for monolayer-bilayer-monolayer graphene planar junctions.One is the two monolayer graphene contacting the same side of the bilayer graphene,and the other is the two-monolayer graphene contacting the different layers of the bilayer graphene.In this paper,according to the Landauer-Büttiker formula,we study the transport properties of these two configurations.The influences of the local gate potential in each part,the bias potential in bilayer graphene,the disorder and external magnetic field on conductance are obtained.We find the conductances of the two configurations can be manipulated by all of these effects.Especially,one can distinguish the two stacking configurations by introducing the bias potential into the bilayer graphene.The strong disorder and the external magnetic field will make the two stacking configurations indistinguishable in the transport experiment.

Interfaces exchange bias and magnetic properties of ordered CoFe_2O_4/Co_3O_4 nanocomposites

International Nuclear Information System (INIS)

Zhang, B.B.; Xu, J.C.; Wang, P.F.; Han, Y.B.; Hong, B.; Jin, H.X.; Jin, D.F.; Peng, X.L.; Li, J.; Yang, Y.T.; Gong, J.; Ge, H.L.; Wang, X.Q.

2015-01-01

Graphical abstract: - Highlights: • CoFe_2O_4 nanoparticles were well-dispersed anchored in mesopores of Co_3O_4. • The magnetic behavior of nanocomposites changed greatly at low temperature. • CoFe_2O_4 nanoparticles reinforced the interfaces magnetic interaction of nanocomposites. • M increased with the doping of CoFe_2O_4 and the decreasing temperature. • Exchange bias effect was observed at 100 K and increased with the doping of CoFe_2O_4. - Abstract: Cobalt ferrites (CoFe_2O_4) nanoparticles were implanted into the ordered mesoporous cobaltosic oxide (Co_3O_4) nanowires to synthesize magnetic CoFe_2O_4/Co_3O_4 nanocomposites. X-ray diffraction (XRD), N_2 physical absorption–desorption, transmission electron microscope (TEM) and energy disperse spectroscopy (EDS) were used to characterize the microstructure of mesoporous Co_3O_4 and CoFe_2O_4/Co_3O_4 nanocomposites. The percent of pore-volume of mesoporous Co_3O_4 nanowires was calculated to be about 41.99% and CoFe_2O_4 nanoparticles were revealed to exist in the mesopores of Co_3O_4_. The magnetic behavior of both samples were investigated with superconducting quantum interference device (SQUID). Magnetization increased with the doping CoFe_2O_4 and decreasing temperature, while coercivity hardly changed. The exchange bias effect was obviously observed at 100 K and enhanced with the doping CoFe_2O_4. CoFe_2O_4 nanoparticles reinforced the interfaces magnetic interaction between antiferromagnetic Co_3O_4 and ferrimagnetic CoFe_2O_4.

Magnon Spin Hall Magnetoresistance of a Gapped Quantum Paramagnet

Science.gov (United States)

Ulloa, Camilo; Duine, R. A.

2018-04-01

Motivated by recent experimental work, we consider spin transport between a normal metal and a gapped quantum paramagnet. We model the latter as the magnonic Mott-insulating phase of an easy-plane ferromagnetic insulator. We evaluate the spin current mediated by the interface exchange coupling between the ferromagnet and the adjacent normal metal. For the strongly interacting magnons that we consider, this spin current gives rise to a spin Hall magnetoresistance that strongly depends on the magnitude of the magnetic field, rather than its direction. This Letter may motivate electrical detection of the phases of quantum magnets and the incorporation of such materials into spintronic devices.

ac spin-Hall effect

International Nuclear Information System (INIS)

Entin-Wohlman, O.

2005-01-01

Full Text:The spin-Hall effect is described. The Rashba and Dresselhaus spin-orbit interactions are both shown to yield the low temperature spin-Hall effect for strongly localized electrons coupled to phonons. A frequency-dependent electric field E(ω) generates a spin-polarization current, normal to E, due to interference of hopping paths. At zero temperature the corresponding spin-Hall conductivity is real and is proportional to ω 2 . At non-zero temperatures the coupling to the phonons yields an imaginary term proportional to ω. The interference also yields persistent spin currents at thermal equilibrium, at E = 0. The contributions from the Dresselhaus and Rashba interactions to the interference oppose each other

Rubrene: The interplay between intramolecular and intermolecular interactions determines the planarization of its tetracene core in the solid state

KAUST Repository

Sutton, Christopher; Marshall, Michael S.; Sherrill, C. David; Risko, Chad; Bredas, Jean-Luc

2015-01-01

exchange-repulsion interactions among the phenyl side groups. Calculations based on available crystallographic structures reveal that planar conformations of the tetracene core in the solid state result from intermolecular interactions that can be tuned

Pure spin current manipulation in antiferromagnetically exchange coupled heterostructures

Science.gov (United States)

Avilés-Félix, L.; Butera, A.; González-Chávez, D. E.; Sommer, R. L.; Gómez, J. E.

2018-03-01

We present a model to describe the spin currents generated by ferromagnet/spacer/ferromagnet exchange coupled trilayer systems and heavy metal layers with strong spin-orbit coupling. By exploiting the magnitude of the exchange coupling (oscillatory RKKY-like coupling) and the spin-flop transition in the magnetization process, it has been possible to produce spin currents polarized in arbitrary directions. The spin-flop transition of the trilayer system originates pure spin currents whose polarization vector depends on the exchange field and the magnetization equilibrium angles. We also discuss a protocol to control the polarization sign of the pure spin current injected into the metallic layer by changing the initial conditions of magnetization of the ferromagnetic layers previously to the spin pumping and inverse spin Hall effect experiments. The small differences in the ferromagnetic layers lead to a change in the magnetization vector rotation that permits the control of the sign of the induced voltage components due to the inverse spin Hall effect. Our results can lead to important advances in hybrid spintronic devices with new functionalities, particularly, the ability to control microscopic parameters such as the polarization direction and the sign of the pure spin current through the variation of macroscopic parameters, such as the external magnetic field or the thickness of the spacer in antiferromagnetic exchange coupled systems.

Latin American foreign exchange intervention - Updated

OpenAIRE

Da Silva, Sergio; Nunes, Mauricio

2007-01-01

We examine Latin American foreign exchange intervention in a framework where the exchange rate regime is endogenous and there exists an inefficient, equilibrium foreign exchange intervention bias. The model suggests that greater central bank independence is associated with lesser intervention in the foreign exchange market, and also with leaning-against-the-wind intervention. Both results are confirmed by data from 13 Latin American countries.

Preasymptotical corrections to the pomeron exchange

International Nuclear Information System (INIS)

Volkovitskij, P.E.

1985-01-01

IN the frame of quark-gluon model for strong interactions, based on the topological expansion and string model, the planar diagrams are connected with Regge poles and the cylinder diagrams correspond to the pomeron. In earlier works it was shown that in this approach strong exchange degeneracy has to take place. This fact in the case of the pomeron with intercept αsub(D)(O)>1 is in disagreement with experiment. In the present paper the preasymptotical corrections to the pomeron exchange are calculated. It is shown that these corrections remove the dissagreement

Exchange bias effect and intragranular magnetoresistance in Nd0.84Sr0.16CoO3

International Nuclear Information System (INIS)

Patra, M; Majumdar, S; Giri, S

2009-01-01

Electrical transport properties as a function of magnetic field and time have been investigated in polycrystalline, Nd 0.84 Sr 0.16 CoO 3 . A strong exchange bias (EB) effect is observed associated with the fairly large intragranular magnetoresistance (MR). The EB effect observed in the MR curve is compared with the EB effect manifested in the magnetic hysteresis loop. A training effect, described as the decrease of EB effect when the sample is successively field cycled at a particular temperature, has been observed in the shift of the MR curve. The training effect could be analyzed by successful models. The EB effect, MR and a considerable time dependence in MR are attributed to the intrinsic nanostructure giving rise to varieties of magnetic interfaces in the grain interior.

Lessons learned from the manufacture of the W7-X planar coils

Science.gov (United States)

Viebke, H.; Gustke, D.; Rummel, T.; Sborchia, C.; Schroeder, R.; Williams, D.; Bates, S.; Leigh, B.; Winter, R.

2006-06-01

WENDELSTEIN 7-X (W7-X) is a superconducting stellarator. The planar coils are in charge to modify the magnetic filed configuration of the W7-X. The major challenges during manufacturing were the fabrication of the cable-in-conduit conductor, the accuracy of the coil cases after welding and machining and the development of electrical joints with a resistance below 1 nΩ. Leaks were detected during repetitive in the case cooling system, which were caused by stress corrosion cracking. High voltage tests in a reduced vacuum environment (Paschen conditions) revealed that the insulation had to be reinforced and the quench detection wires had to be exchanged. This paper gives an overview about the main technical challenges of the planar coils and the lessons learned during production.

Lessons learned from the manufacture of the W7-X planar coils

International Nuclear Information System (INIS)

Viebke, H; Gustke, D; Rummel, T; Sborchia, C; Schroeder, R; Williams, D; Bates, S; Leigh, B; Winter, R

2006-01-01

WENDELSTEIN 7-X (W7-X) is a superconducting stellarator. The planar coils are in charge to modify the magnetic filed configuration of the W7-X. The major challenges during manufacturing were the fabrication of the cable-in-conduit conductor, the accuracy of the coil cases after welding and machining and the development of electrical joints with a resistance below 1 nΩ. Leaks were detected during repetitive in the case cooling system, which were caused by stress corrosion cracking. High voltage tests in a reduced vacuum environment (Paschen conditions) revealed that the insulation had to be reinforced and the quench detection wires had to be exchanged. This paper gives an overview about the main technical challenges of the planar coils and the lessons learned during production

A constricted quantum Hall system as a beam-splitter: understanding ballistic transport on the edge

International Nuclear Information System (INIS)

Lal, Siddhartha

2007-09-01

We study transport in a model of a quantum Hall edge system with a gate-voltage controlled constriction. A finite backscattered current at finite edge-bias is explained from a Landauer- Buttiker analysis as arising from the splitting of edge current caused by the difference in the filling fractions of the bulk (ν 1 ) and constriction(ν 2 ) quantum Hall fluid regions. We develop a hydrodynamic theory for bosonic edge modes inspired by this model. The constriction region splits the incident long-wavelength chiral edge density-wave excitations among the transmitting and reflecting edge states encircling it. These findings provide satisfactory explanations for several puzzling recent experimental results. These results are confirmed by computing various correlators and chiral linear conductances of the system. In this way, our results find excellent agreement with some of the recent puzzling experimental results for the cases of ν 1 = 1/3, 1. (author)

Bias-induced conformational switching of supramolecular networks of trimesic acid at the solid-liquid interface

Science.gov (United States)

Ubink, J.; Enache, M.; Stöhr, M.

2018-05-01

Using the tip of a scanning tunneling microscope, an electric field-induced reversible phase transition between two planar porous structures ("chickenwire" and "flower") of trimesic acid was accomplished at the nonanoic acid/highly oriented pyrolytic graphite interface. The chickenwire structure was exclusively observed for negative sample bias, while for positive sample bias only the more densely packed flower structure was found. We suggest that the slightly negatively charged carboxyl groups of the trimesic acid molecule are the determining factor for this observation: their adsorption behavior varies with the sample bias and is thus responsible for the switching behavior.

Efficient switching of 3-terminal magnetic tunnel junctions by the giant spin Hall effect of Pt85Hf15 alloy

Science.gov (United States)

Nguyen, Minh-Hai; Shi, Shengjie; Rowlands, Graham E.; Aradhya, Sriharsha V.; Jermain, Colin L.; Ralph, D. C.; Buhrman, R. A.

2018-02-01

Recent research has indicated that introducing impurities that increase the resistivity of Pt can enhance the efficiency of the spin Hall torque it generates. Here, we directly demonstrate the usefulness of this strategy by fabricating prototype 3-terminal in-plane-magnetized magnetic tunnel junctions that utilize the spin Hall torque from a Pt85Hf15 alloy and measuring the critical currents for switching. We find that Pt85Hf15 reduces the switching current densities compared to pure Pt by approximately a factor of 2 for both quasi-static ramped current biases and nanosecond-scale current pulses, thereby proving the feasibility of this approach in assisting the development of efficient embedded magnetic memory technologies.

Frequency spectrum of Calder Hall reactor noise

International Nuclear Information System (INIS)

Cummins, J.D.

1960-01-01

The frequency spectrum of the noise power of Calder Hall reactor No. 1 has been obtained by analysing a tape recording of the backed off power. The root mean square noise power due to all frequencies above 0.001 cycles per second was found to be 0.13%. The noise power for this reactor, is due mainly to modulations of the power level by reactivity variations caused in turn by gas temperature changes. These gas temperature changes are caused by a Cyclic variation in the feedwater regulator to the heat exchanger. The apparatus and method used to determine the noise power are described in this memorandum. It is shown that for frequencies in the range 0.001 to 0.030 cycles per second the noise spectrum falls at 60 decibels per decade of frequency. (author)

The Planar Sandwich and Other 1D Planar Heat Flow Test Problems in ExactPack

Energy Technology Data Exchange (ETDEWEB)

Singleton, Jr., Robert [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

2017-01-24

This report documents the implementation of several related 1D heat flow problems in the verification package ExactPack [1]. In particular, the planar sandwich class defined in Ref. [2], as well as the classes PlanarSandwichHot, PlanarSandwichHalf, and other generalizations of the planar sandwich problem, are defined and documented here. A rather general treatment of 1D heat flow is presented, whose main results have been implemented in the class Rod1D. All planar sandwich classes are derived from the parent class Rod1D.

Exchange bias in UO.sub.2./sub./Fe.sub.3./sub.O.sub.4./sub. thin films above the Néel temperature of UO.sub.2./sub

Czech Academy of Sciences Publication Activity Database

Tereshina, Evgeniya; Bao, Z.; Havela, L.; Daniš, S.; Kuebel, C.; Gouder, T.; Caciuffo, R.

2014-01-01

Roč. 105, č. 12 (2014), "122405-1"-"122405-5" ISSN 0003-6951 R&D Projects: GA ČR GP13-25866P Institutional support: RVO:68378271 Keywords : exchange bias effect * uranium dioxide * magnetite Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.302, year: 2014

Proposal of limit moment equation applicable to planar/non-planar flaw in wall thinned pipes under bending

International Nuclear Information System (INIS)

Tsuji, Masataka; Meshii, Toshiyuki

2011-01-01

Highlights: → A limit moment equation applicable to planar/non-planar flaw of 0 ≤ θ ≤ π found in wall thinned straight pipes was proposed. → An idea to rationally classify planar/non-planar flaw in wall thinned pipes was proposed. → The equation based on the experimental observation focused on the fracture mode. - Abstract: In this paper, a limit bending moment equation applicable to all types of planar and non-planar flaws in wall-thinned straight pipes under bending was proposed. A system to rationally classify the planar/non-planar flaws in wall-thinned pipes was suggested based on experimental observations focused on the fracture mode. The results demonstrate the importance of distinguishing between axial and circumferential long flaws in wall-thinned pipes.

Hall C

Data.gov (United States)

Federal Laboratory Consortium — Hall C's initial complement of equipment (shown in the figure), includes two general-purpose magnetic spectrometers. The High Momentum Spectrometer (HMS) has a large...

Hall A

Data.gov (United States)

Federal Laboratory Consortium — The instrumentation in Hall A at the Thomas Jefferson National Accelerator Facility was designed to study electroand photo-induced reactions at very high luminosity...

Variability in DMSA reporting following urinary tract infection in children: pinhole, planar, and pinhole with planar

International Nuclear Information System (INIS)

Rossleigh, M.A.; Christian, C.L.; Craig, J.C.; Howman-Giles, R.B.; Grunewald, S.

2004-01-01

Purpose: To determine whether the provision of DMSA images obtained by pinhole collimation reduces inter-observer variability of reporting compared with planar DMSA images alone. Methods: One hundred consecutive DMSA images were independently interpreted three times (pinhole alone, planar alone, pinhole and planar) by four participating nuclear medicine specialists from different departments and in random order. The presence or absence of renal parenchymal abnormality was classified using the modified four level grading system of Goldraich with mean values for the 6 comparisons reported. Results: The proportion of DMSA images interpreted as abnormal was 31% for planar, 34% for pinhole and 33% for planar with pinhole. Agreement was 89% for planar alone, 89% for pinhole alone and 90% for planar with pinhole, with kappa values 0.74, 0.75 and 0.80 respectively for the normal-abnormal scan classification of individual children. These results did not vary appreciably whether interpretation of patients, kidneys or kidney zones was compared. Reasons for disagreement in reporting included different interpretations of 'abnormalities' as normal anatomical variations (splenic impression, fetal lobulation, duplex collecting systems, column of Bertin) or true parenchymal abnormalities, different adjustments in thresholds for reporting abnormality when images were technically suboptimal, different weighting given to pinhole and planar images when both were provided, and error. Conclusion: Four experienced nuclear medicine physicians showed substantial agreement in the interpretation of planar alone, pinhole alone and planar with pinhole DMSA images, but the provision of both sets of images, planar and pinhole, did not reduce variability. (authors)

Properties of Foreign Exchange Risk Premiums

DEFF Research Database (Denmark)

Sarno, Lucio; Schneider, Paul; Wagner, Christian

2012-01-01

We study the properties of foreign exchange risk premiums that can explain the forward bias puzzle, defined as the tendency of high-interest rate currencies to appreciate rather than depreciate. These risk premiums arise endogenously from the no-arbitrage condition relating the term structure of ...... and are closely related to global risk aversion, the business cycle, and traditional exchange rate fundamentals.......We study the properties of foreign exchange risk premiums that can explain the forward bias puzzle, defined as the tendency of high-interest rate currencies to appreciate rather than depreciate. These risk premiums arise endogenously from the no-arbitrage condition relating the term structure...... of interest rates and exchange rates. Estimating affine (multi-currency) term structure models reveals a noticeable tradeoff between matching depreciation rates and accuracy in pricing bonds. Risk premiums implied by our global affine model generate unbiased predictions for currency excess returns...

75 FR 22770 - Gary E. Hall and Rita Hall; Notice of Availability of Environmental Assessment

Science.gov (United States)

2010-04-30

... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Project No. 13652-000-Montana] Gary E. Hall and Rita Hall; Notice of Availability of Environmental Assessment April 22, 2010. In accordance with the National Environmental Policy Act of 1969, as amended, and the Federal Energy Regulatory...

Charge carrier coherence and Hall effect in organic semiconductors

Science.gov (United States)

Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

2016-01-01

Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor. PMID:27025354

Charge carrier coherence and Hall effect in organic semiconductors.

Science.gov (United States)

Yi, H T; Gartstein, Y N; Podzorov, V

2016-03-30

Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.

Guild Hall retrofit

Energy Technology Data Exchange (ETDEWEB)

1984-08-01

This report demonstrates the economic viability of an exterior rewrap retrofit performed on a public community facility for the performing arts. This facility originally consisted of two mess halls built by the American army. The exterior retrofit consisted of constructing a super-insulated passageway to link the two halls as well as completely wrapping the facility with six millimetre polyethylene to provide an airtight barrier. The roofs and walls were reinsulated and insulation levels were increased to RSI 10.5 in the ceilings and RSI 7.7 in the walls. The installation of a propane fuelled furnace was also included in the retrofit package. Prior to the renovations and retrofitting, the Guild Hall facility was almost unusable. The demonstration project transformed the cold, drafty buildings into an attractive, comfortable and functional centre for the performing arts. Heating requirements have been reduced to 500 MJ/m {sup 2} of floor space annually compared to a predicted 1,760 MJ/m{sup 2} of floor space based on HOTCAN analysis of the heating requirements without the energy conservation measures. 9 figs., 10 tabs.

Exchange biased FeNi/FeMn bilayers with coercivity and switching field enhanced by FeMn surface oxidation

Directory of Open Access Journals (Sweden)

A. V. Svalov

2013-09-01

Full Text Available FeNi/FeMn bilayers were grown in a magnetic field and subjected to heat treatments at temperatures of 50 to 350 °C in vacuum or in a gas mixture containing oxygen. In the as-deposited state, the hysteresis loop of 30 nm FeNi layer was shifted. Low temperature annealing leads to a decrease of the exchange bias field. Heat treatments at higher temperatures in gas mixture result in partial oxidation of 20 nm thick FeMn layer leading to a nonlinear dependence of coercivity and a switching field of FeNi layer on annealing temperature. The maximum of coercivity and switching field were observed after annealing at 300 °C.

Laurance David Hall.

Science.gov (United States)

Coxon, Bruce

2011-01-01

An account is given of the life, scientific contributions, and passing of Laurance David Hall (1938-2009), including his early history and education at the University of Bristol, UK, and the synthesis and NMR spectroscopy of carbohydrates and other natural products during ∼20 years of research and teaching at the University of British Columbia in Vancouver, Canada. Lists of graduate students, post-doctoral fellows, and sabbatical visitors are provided for this period. Following a generous endowment by Dr. Herchel Smith, Professor Hall built a new Department of Medicinal Chemistry at Cambridge University, UK, and greatly expanded his researches into the technology and applications of magnetic resonance imaging (MRI) and zero quantum NMR. MRI technology was applied both to medical problems such as the characterization of cartilage degeneration in knee joints, the measurement of ventricular function, lipid localization in animal models of atherosclerosis, paramagnetic metal complexes of polysaccharides as contrast agents, and studies of many other anatomical features, but also to several aspects of materials analysis, including food analyses, process control, and the elucidation of such physical phenomena as the flow of liquids through porous media, defects in concrete, and the visualization of fungal damage to wood. Professor Hall's many publications, patents, lectures, and honors and awards are described, and also his successful effort to keep the Asilomar facility in Pacific Grove, California as the alternating venue for the annual Experimental NMR Conference. Two memorial services for Professor Hall are remembered. Copyright © 2011 Elsevier Inc. All rights reserved.

Magnetic bilayer-skyrmions without skyrmion Hall effect

Science.gov (United States)

Zhang, Xichao; Zhou, Yan; Ezawa, Motohiko

2016-01-01

Magnetic skyrmions might be used as information carriers in future advanced memories, logic gates and computing devices. However, there exists an obstacle known as the skyrmion Hall effect (SkHE), that is, the skyrmion trajectories bend away from the driving current direction due to the Magnus force. Consequently, the skyrmions in constricted geometries may be destroyed by touching the sample edges. Here we theoretically propose that the SkHE can be suppressed in the antiferromagnetically exchange-coupled bilayer system, since the Magnus forces in the top and bottom layers are exactly cancelled. We show that such a pair of SkHE-free magnetic skyrmions can be nucleated and be driven by the current-induced torque. Our proposal provides a promising means to move magnetic skyrmions in a perfectly straight trajectory in ultra-dense devices with ultra-fast processing speed.

The Other Hall Effect: College Board Physics

Science.gov (United States)

Sheppard, Keith; Gunning, Amanda M.

2013-01-01

Edwin Herbert Hall (1855-1938), discoverer of the Hall effect, was one of the first winners of the AAPT Oersted Medal for his contributions to the teaching of physics. While Hall's role in establishing laboratory work in high schools is widely acknowledged, his position as chair of the physics section of the Committee on College Entrance…

How to draw a planarization

NARCIS (Netherlands)

Bläsius, T.; Radermacher, M.; Rutter, I.; Steffen, B.; Baier, C.; van den Brand, M.; Eder, J.; Hinchey, M.; Margaria, T.

2017-01-01

We study the problem of computing straight-line drawings of non-planar graphs with few crossings. We assume that a crossing-minimization algorithm is applied first, yielding a planarization, i.e., a planar graph with a dummy vertex for each crossing, that fixes the topology of the resulting drawing.

Anomalous Hall effect in polycrystalline Ni films

KAUST Repository

Guo, Zaibing

2012-02-01

We systematically studied the anomalous Hall effect in a series of polycrystalline Ni films with thickness ranging from 4 to 200 nm. It is found that both the longitudinal and anomalous Hall resistivity increased greatly as film thickness decreased. This enhancement should be related to the surface scattering. In the ultrathin films (46 nm thick), weak localization corrections to anomalous Hall conductivity were studied. The granular model, taking into account the dominated intergranular tunneling, has been employed to explain this phenomenon, which can explain the weak dependence of anomalous Hall resistivity on longitudinal resistivity as well. © 2011 Elsevier Ltd. All rights reserved.

Elementary theory of quantum Hall effect

Directory of Open Access Journals (Sweden)

Keshav N. Shrivastava

2008-04-01

Full Text Available The Hall effect is the generation of a current perpendicular to both the direction of the applied electric as well as magnetic field in a metal or in a semiconductor. It is used to determine the concentration of electrons. The quantum Hall effect with integer quantization was discovered by von Klitzing and fractionally charged states were found by Tsui, Stormer and Gossard. Robert Laughlin explained the quantization of Hall current by using “flux quantization” and introduced incompressibility to obtain the fractional charge. We have developed the theory of the quantum Hall effect by using the theory of angular momentum. Our predicted fractions are in accord with those measured. We emphasize our explanation of the observed phenomena. We use spin to explain the fractional charge and hence we discover spin-charge locking.

Determination of many-electron basis functions for a quantum Hall ground state using Schur polynomials

Science.gov (United States)

Mandal, Sudhansu S.; Mukherjee, Sutirtha; Ray, Koushik

2018-03-01

A method for determining the ground state of a planar interacting many-electron system in a magnetic field perpendicular to the plane is described. The ground state wave-function is expressed as a linear combination of a set of basis functions. Given only the flux and the number of electrons describing an incompressible state, we use the combinatorics of partitioning the flux among the electrons to derive the basis wave-functions as linear combinations of Schur polynomials. The procedure ensures that the basis wave-functions form representations of the angular momentum algebra. We exemplify the method by deriving the basis functions for the 5/2 quantum Hall state with a few particles. We find that one of the basis functions is precisely the Moore-Read Pfaffian wave function.

Temperature dependence of collapse of quantized hall resistance

International Nuclear Information System (INIS)

Tanaka, Hiroyasu; Kawashima, Hironori; Iizuka, Hisamitsu; Fukuda, Hideaki; Kawaji, Shinji

2006-01-01

Similarity is observed in the deviation of Hall resistance from the quantized value with the increase in the source-drain current I SD in our butterfly-type Hall bars and in the Hall bars used by Jeanneret et al., while changes in the diagonal resistivity ρ xx with I SD are significantly different between these Hall bars. The temperature dependence of the critical Hall electric field F cr (T) for the collapse of R H (4) measured in these Hall bars is approximated using F cr (T) = F cr (0)(1 - (T/T cr ) 2 ). Here, the critical Hall electric field at zero temperature depends on the magnetic field B as F cr (0) ∝ B 3/2 . Theoretical considerations are given on F cr (T) on the basis of a temperature-dependent mobility edge model and a schema of temperature-dependent inter-Landau level tunneling probability arising from the Fermi distribution function. The former does not fit in with the I SD dependence of activation energy in ρ xx . (author)

Design of special planar linkages

CERN Document Server

Zhao, Jing-Shan; Ma, Ning; Chu, Fulei

2013-01-01

Planar linkages play a very important role in mechanical engineering. As the simplest closed chain mechanisms, planar four-bar linkages are widely used in mechanical engineering, civil engineering and aerospace engineering.Design of Special Planar Linkages proposes a uniform design theory for planar four-bar linkages. The merit of the method proposed in this book is that it allows engineers to directly obtain accurate results when there are such solutions for the specified n precise positions; otherwise, the best approximate solutions will be found. This book discusses the kinematics and reach

Prospect of quantum anomalous Hall and quantum spin Hall effect in doped kagome lattice Mott insulators.

Science.gov (United States)

Guterding, Daniel; Jeschke, Harald O; Valentí, Roser

2016-05-17

Electronic states with non-trivial topology host a number of novel phenomena with potential for revolutionizing information technology. The quantum anomalous Hall effect provides spin-polarized dissipation-free transport of electrons, while the quantum spin Hall effect in combination with superconductivity has been proposed as the basis for realizing decoherence-free quantum computing. We introduce a new strategy for realizing these effects, namely by hole and electron doping kagome lattice Mott insulators through, for instance, chemical substitution. As an example, we apply this new approach to the natural mineral herbertsmithite. We prove the feasibility of the proposed modifications by performing ab-initio density functional theory calculations and demonstrate the occurrence of the predicted effects using realistic models. Our results herald a new family of quantum anomalous Hall and quantum spin Hall insulators at affordable energy/temperature scales based on kagome lattices of transition metal ions.

The quantum hall effect

International Nuclear Information System (INIS)

El-Arabi, N. M.

1993-01-01

Transport phenomena in two dimensional semiconductors have revealed unusual properties. In this thesis these systems are considered and discussed. The theories explain the Integral Quantum Hall Effect (IQHE) and the Fractional Quantum Hall Effect (FQHE). The thesis is composed of five chapters. The first and the second chapters lay down the theory of the IQHE, the third and fourth consider the theory of the FQHE. Chapter five deals with the statistics of particles in two dimension. (author). Refs

Paired Hall states

International Nuclear Information System (INIS)

Greiter, M.

1992-01-01

This dissertation contains a collection of individual articles on various topics. Their significance in the corresponding field as well as connections between them are emphasized in a general and comprehensive introduction. In the first article, the author explores the consequences for macroscopic effective Lagrangians of assuming that the momentum density is proportional to the flow of conserved current. The universal corrections obtained for the macroscopic Lagrangian of a superconductor describe the London Hall effect, and provide a fully consistent derivation of it. In the second article, a heuristic principle is proposed for quantized Hall states: the existence and incompressibility of fractionally quantized Hall states is explained by an argument based on an adiabatic localization of magnetic flux, the process of trading uniform flux for an equal amount of fictitious flux attached to the particles. This principle is exactly implemented in the third article. For a certain class of model Hamiltonians, the author obtains Laughlin's Jastrow type wave functions explicitly from a filled Landau level, by smooth extrapolation in quantum statistics. The generalization of this analysis to the torus geometry shows that theorems restricting the possibilities of quantum statistics on closed surfaces are circumvented in the presence of a magnetic field. In the last article, the existence is proposed of a novel incompressible quantum liquid, a paired Hall state, at a half filled Landau level. This state arises adiabatically from free fermions in zero magnetic field, and reduces to a state previously proposed by Halperin in the limit of tightly bound pairs. It supports unusual excitations, including neutral fermions and charge e/4 anyons with statistical parameter θ = π/8

Constricted double loop hysteresis and exchange bias attributed to the surface anisotropy in nanocrystalline La1/3Sr2/3Fe1−xCrxO3

International Nuclear Information System (INIS)

Sabyasachi, Sk.; Patra, M.; Majumdar, S.; Giri, S.

2013-01-01

We investigate magnetic properties of nanocrystalline ferrites with composition La 1/3 Sr 2/3 Fe 1−x Cr x O 3 (LSFCO) for x=0, 0.02, 0.04 and 0.06. Thermal variation of zero field cooled magnetization displays a weak signature close to the charge (T CO ) as well as antiferromagnetic ordering for x=0, 0.02 and 0.04. In addition, another disordered glassy magnetic transition (T g ) is noticed for all the compositions. T g is predominantly observed, although signature of charge ordering almost disappears for x=0.06. Interestingly, a constricted double loop type magnetic hysteresis loop is observed for x=0.02. This structure in the hysteresis loop disappears with further increase in Cr substitution. A systematic shift in the magnetic hysteresis loop is observed for all the compositions, while samples are cooled in a static magnetic field, which is the manifestation of exchange bias (EB) effect. The EB field (H E ) and magnetization (M E ) decrease remarkably due to minor Cr substitution at x=0.02 and then it reveals a sluggish increase with increasing x. For x=0.04 the EB effect emerges below ∼T CO , increases sluggishly with lowering of temperature and below ∼T g , it increases rapidly. The cooling field dependence exhibits significant increase of H E and M E for x=0.04, which is associated with the considerable increase of coercivity. Possible origin of EB correlated with the magnetic phase coexistence has been argued for nanocrystalline LSFCO. - Highlights: • Constricted double loop structure is observed for minor Cr substitution. • Exchange bias decreases significantly due to Cr substitution. • Intricate magnetic phase coexistence leads to the exchange bias effect

Dr. Hall and the work cure.

Science.gov (United States)

Reed, Kathlyn L

2005-01-01

Herbert James Hall, MD (1870-1923), was a pioneer in the systematic and organized study of occupation as therapy for persons with nervous and mental disorders that he called the "work cure." He began his work in 1904 during the early years of the Arts and Crafts Movement in the United States. His primary interest was the disorder neurasthenia, a condition with many symptoms including chronic fatigue, stress, and inability to work or perform everyday tasks. The prevailing treatment of the day was absolute bed rest known as the "rest cure." Hall believed that neurasthenia was not caused by overwork but by faulty living habits that could be corrected through an ordered life schedule and selected occupations. He identified several principles of therapy that are still used today including graded activity and energy conservation. Dr. Adolph Meyer credits Hall for organizing the ideas on the therapeutic use of occupation (Meyer, 1922). Hall also provided the name American Occupational Therapy Association for the professional organization and served as the fourth president. For his many contributions to the profession Hall deserves to be recognized as a major contributor to the development and organization of occupational therapy.

Costs, biases and betting markets: new evidence

OpenAIRE

Michael A. Smith; David Paton; Leighton Vaughan-Williams

2004-01-01

In recent years, person-to-person wagering on Internet ‘betting exchanges’ (sometimes known as ‘matched betting’) has become an increasingly important medium for betting on horse racing, sports and special events. Established gambling operators have argued that betting exchanges should not be allowed on the grounds that they represent unfair competition. In this paper, we argue that, in fact, betting exchanges have brought about reductions in traditional market biases and significant efficien...

Deterioration of exchange bias in CoO-Co bilayers by the roughness of the ZnO substrates

Directory of Open Access Journals (Sweden)

Stamopoulos D.

2014-07-01

Full Text Available The Exchange Bias (EB effect is observed at the interface of Antiferromagnet/Ferromagnet (AF/FM structures and depends on the interface roughness (IR. Until today, only low IR values, usually below 10 nm, have been investigated. Here we investigate an extended range of IR through controlling the surface roughness (SR of the employed substrates. We employ CoO/Co bilayers (thickness within 10-60 nm, a classic AF/FM structure that exhibits intense EB. ZnO was employed as the substrate in both film and bulk forms, enabling us to vary the SR up to 840 nm. Our data reveal a strong relative decrease, ranging within 20-65%, of both the shift HshiftEB and coercive HcEB fields upon increase of SR (IR, for both parallel and normal magnetic field-sample configurations. For the explanation of these findings we propose that in thin AF/FM structures deposited on rough substrates the local magnetization, Mf of the FM is ‘locked’ mainly in-layer due to shape anisotropy, thus it is forced to follow the morphologically rough landscape of the substrate. This imposes misalignment between Mf, that is ‘directionally random’, and Hex, that is ‘directionally oriented’. This weakens the biasing potential of Hex on Mf and reduces the relative macroscopic parameters Hshift EB amd Hc EB.

Surface Spin Glass Ordering and Exchange Bias in Nanometric Sm0.09Ca0.91MnO3 Manganites

Science.gov (United States)

Giri, S. K.; Nath, T. K.

2011-07-01

We have thoroughly investigated the entire magnetic state of under doped ferromagnetic insulating manganite Sm0.09Ca0.91MnO3 through temperature dependent linear and non-linear ac magnetic susceptibility and magnetization measurements. This ferromagnetic insulating manganite is found to have frequency dependent ferromagnetic to paramagnetic transition temperature at around 108 K. Exchange- bias effect are observed in field -cooled magnetic hysteresis loops for this nanoparticle. We have attributed our observation to the formation of ferromagnetic cluster which are formed as a consequence of intrinsic phase separation below certain temperature in this under doped manganites. We have carried out electronic- and magneto-transport measurements to support these observed results.

Non-Planar Nanotube and Wavy Architecture Based Ultra-High Performance Field Effect Transistors

KAUST Repository

Hanna, Amir

2016-11-01

This dissertation presents a unique concept for a device architecture named the nanotube (NT) architecture, which is capable of higher drive current compared to the Gate-All-Around Nanowire architecture when applied to heterostructure Tunnel Field Effect Transistors. Through the use of inner/outer core-shell gates, heterostructure NT TFET leverages physically larger tunneling area thus achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. We discuss the physics of p-type (Silicon/Indium Arsenide) and n-type (Silicon/Germanium hetero-structure) based TFETs. Numerical TCAD simulations have shown that NT TFETs have 5x and 1.6 x higher normalized ION when compared to GAA NW TFET for p and n-type TFETs, respectively. This is due to the availability of larger tunneling junction cross sectional area, and lower Shockley-Reed-Hall recombination, while achieving sub 60 mV/dec performance for more than 5 orders of magnitude of drain current, thus enabling scaling down of Vdd to 0.5 V. This dissertation also introduces a novel thin-film-transistors architecture that is named the Wavy Channel (WC) architecture, which allows for extending device width by integrating vertical fin-like substrate corrugations giving rise to up to 50% larger device width, without occupying extra chip area. The novel architecture shows 2x higher output drive current per unit chip area when compared to conventional planar architecture. The current increase is attributed to both the extra device width and 50% enhancement in field effect mobility due to electrostatic gating effects. Digital circuits are fabricated to demonstrate the potential of integrating WC TFT based circuits. WC inverters have shown 2× the peak-to-peak output voltage for the same input, and ~2× the operation frequency of the planar inverters for the same peak-to-peak output voltage. WC NAND circuits have shown 2× higher peak-to-peak output voltage, and 3× lower high-to-low propagation

Inverse spin Hall effect induced by spin pumping into semiconducting ZnO

Energy Technology Data Exchange (ETDEWEB)

Lee, Jung-Chuan [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Huang, Leng-Wei [Graduate Institute of Applied Physics, National Chengchi University, Taipei 11605, Taiwan (China); Hung, Dung-Shing, E-mail: dshung@mail.mcu.edu.tw [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Department of Information and Telecommunications Engineering, Ming Chuan University, Taipei 111, Taiwan (China); Chiang, Tung-Han [Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China); Huang, J. C. A., E-mail: jcahuang@mail.ncku.edu.tw [Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Liang, Jun-Zhi [Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Department of Physics, Fu Jen Catholic University, Taipei 242, Taiwan (China); Lee, Shang-Fan, E-mail: leesf@phys.sinica.edu.tw [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Graduate Institute of Applied Physics, National Chengchi University, Taipei 11605, Taiwan (China)

2014-02-03

The inverse spin Hall effect (ISHE) of n-type semiconductor ZnO thin films with weak spin-orbit coupling has been observed by utilizing the spin pumping method. In the ferromagnetic resonance condition, the spin pumping driven by the dynamical exchange interaction of a permalloy film injects a pure spin current into the adjacent ZnO layer. This spin current gives rise to a DC voltage through the ISHE in the ZnO layer, and the DC voltage is proportional to the microwave excitation power. The effect is sizeable even when the spin backflow is considered.

Inverse spin Hall effect induced by spin pumping into semiconducting ZnO

International Nuclear Information System (INIS)

Lee, Jung-Chuan; Huang, Leng-Wei; Hung, Dung-Shing; Chiang, Tung-Han; Huang, J. C. A.; Liang, Jun-Zhi; Lee, Shang-Fan

2014-01-01

The inverse spin Hall effect (ISHE) of n-type semiconductor ZnO thin films with weak spin-orbit coupling has been observed by utilizing the spin pumping method. In the ferromagnetic resonance condition, the spin pumping driven by the dynamical exchange interaction of a permalloy film injects a pure spin current into the adjacent ZnO layer. This spin current gives rise to a DC voltage through the ISHE in the ZnO layer, and the DC voltage is proportional to the microwave excitation power. The effect is sizeable even when the spin backflow is considered

Interplay between magnetocrystalline anisotropy and exchange bias in epitaxial CoO/Co films

International Nuclear Information System (INIS)

Liu, Hao-Liang; Zeng, Yu-Jia; Van Haesendonck, Chris; Brems, Steven; Temst, Kristiaan; Vantomme, André

2016-01-01

The interplay between magnetocrystalline anisotropy and exchange bias is investigated in CoO/Co bilayer films, which are grown epitaxially on MgO (0 0 1), by magnetization reversal measurements based on the anisotropic magnetoresistance (AMR) effect. While an asymmetric magnetization reversal survives after training for cooling field (CF) along the hard axis, the magnetization reversal becomes symmetric and is dominated in both branches of the hysteresis loop by domain wall motion before and after training for CF along the easy axis. When performing an in-plane hysteresis loop perpendicular to the CF, the hysteresis loop along the easy axis becomes asymmetric: magnetization rotation dominates in the ascending branch, while there is a larger contribution of domain wall motion in the descending branch. Furthermore, the azimuthal angular dependence of the AMR shows two minima after performing a perpendicular hysteresis loop, instead of only one minimum after training. Relying on the extended Fulcomer and Charap model, these effects can be related to an increased deviation of the average uncompensated antiferromagnetic magnetization from the CF direction. This model provides a consistent interpretation of training and asymmetry of the magnetization reversal for epitaxial films with pronounced magnetocrystalline anisotropy as well as for the previously investigated polycrystalline films. (paper)

A scanning tunneling microscopy based potentiometry technique and its application to the local sensing of the spin Hall effect

Directory of Open Access Journals (Sweden)

Ting Xie

2017-12-01

Full Text Available A scanning tunneling microscopy based potentiometry technique for the measurements of the local surface electric potential is presented. A voltage compensation circuit based on this potentiometry technique is developed and employed to maintain a desired tunneling voltage independent of the bias current flow through the film. The application of this potentiometry technique to the local sensing of the spin Hall effect is outlined and some experimental results are reported.

Non-planar ABJ theory and parity

International Nuclear Information System (INIS)

Caputa, Pawel; Kristjansen, Charlotte; Zoubos, Konstantinos

2009-01-01

While the ABJ Chern-Simons-matter theory and its string theory dual manifestly lack parity invariance, no sign of parity violation has so far been observed on the weak coupling spin chain side. In particular, the planar two-loop dilatation generator of ABJ theory is parity invariant. In this Letter we derive the non-planar part of the two-loop dilatation generator of ABJ theory in its SU(2)xSU(2) sub-sector. Applying the dilatation generator to short operators, we explicitly demonstrate that, for operators carrying excitations on both spin chains, the non-planar part breaks parity invariance. For operators with only one type of excitation, however, parity remains conserved at the non-planar level. We furthermore observe that, as for ABJM theory, the degeneracy between planar parity pairs is lifted when non-planar corrections are taken into account.

Non-planar ABJ Theory and Parity

DEFF Research Database (Denmark)

Caputa, Pawel; Kristjansen, Charlotte; Zoubos, Konstantinos

2009-01-01

we derive the non-planar part of the two-loop dilatation generator of ABJ theory in its SU(2)xSU(2) sub-sector. Applying the dilatation generator to short operators, we explicitly demonstrate that, for operators carrying excitations on both spin chains, the non-planar part breaks parity invariance......While the ABJ Chern-Simons-matter theory and its string theory dual manifestly lack parity invariance, no sign of parity violation has so far been observed on the weak coupling spin chain side. In particular, the planar two-loop dilatation generator of ABJ theory is parity invariant. In this letter....... For operators with only one type of excitation, however, parity remains conserved at the non-planar level. We furthermore observe that, as for ABJM theory, the degeneracy between planar parity pairs is lifted when non-planar corrections are taken into account....

Magnetoresistance in quantum Hall metals due to Pancharatnam ...

Indian Academy of Sciences (India)

Abstract. We derive the trial Hall resistance formula for the quantum Hall metals to address both the integer and fractional quantum Hall effects. Within the degenerate (and crossed) Landau levels, and in the presence of changing magnetic field strength, one can invoke two physical processes responsible for the electron ...

Experimental evidence for anisotropic double exchange interaction driven anisotropic transport in manganite heterostructures

NARCIS (Netherlands)

Liao, Zhaoliang; Koster, Gertjan; Huijben, Mark; Rijnders, A.J.H.M.

2017-01-01

An anisotropic double exchange interaction driven giant transport anisotropy is demonstrated in a canonic double exchange system of La2/3Sr1/3MnO3 ultrathin films epitaxially grown on NdGaO3 (110) substrates. The oxygen octahedral coupling at the La2/3Sr1/3MnO3/NdGaO3 interface induces a planar

Spin hall effect associated with SU(2) gauge field

Science.gov (United States)

Tao, Y.

2010-01-01

In this paper, we focus on the connection between spin Hall effect and spin force. Here we investigate that the spin force due to spin-orbit coupling, which, in two-dimensional system, is equivalent to forces of Hirsch and Chudnovsky besides constant factors 3 and frac{3}{2} respectively, is a part of classic Anandan force, and that the spin Hall effect is an anomalous Hall effect. Furthermore, we develop the method of AC phase to derive the expression for the spin force, and note that the most basic spin Hall effect indeed originate from the AC phase and is therefore an intrinsic quantum mechanical property of spin. This method differs from approach of Berry phase in the study of anomalous Hall effect , which is the intrinsic property of the perfect crystal. On the other hand, we use an elegant skill to show that the Chudnovsky-Drude model is reasonable. Here we have improved the theoretical values of spin Hall conductivity of Chudnovsky. Compared to the theoretical values of spin Hall conductivity in the Chudnovsky-Drude model, ours are in better agreement with experimentation. Finally, we discuss the relation between spin Hall effect and fractional statistics.

Hall Sensor Output Signal Fault-Detection & Safety Implementation Logic

Directory of Open Access Journals (Sweden)

Lee SangHun

2016-01-01

Full Text Available Recently BLDC motors have been popular in various industrial applications and electric mobility. Recently BLDC motors have been popular in various industrial applications and electric mobility. In most brushless direct current (BLDC motor drives, there are three hall sensors as a position reference. Low resolution hall effect sensor is popularly used to estimate the rotor position because of its good comprehensive performance such as low cost, high reliability and sufficient precision. Various possible faults may happen in a hall effect sensor. This paper presents a fault-tolerant operation method that allows the control of a BLDC motor with one faulty hall sensor and presents the hall sensor output fault-tolerant control strategy. The situations considered are when the output from a hall sensor stays continuously at low or high levels, or a short-time pulse appears on a hall sensor signal. For fault detection, identification of a faulty signal and generating a substitute signal, this method only needs the information from the hall sensors. There are a few research work on hall effect sensor failure of BLDC motor. The conventional fault diagnosis methods are signal analysis, model based analysis and knowledge based analysis. The proposed method is signal based analysis using a compensation signal for reconfiguration and therefore fault diagnosis can be fast. The proposed method is validated to execute the simulation using PSIM.

The quantized Hall effect

International Nuclear Information System (INIS)

Klitzing von, K.

1989-01-01

The quantized Hall effect is theoretically explained in detail as are its basic properties. The explanation is completed with the pertinent mathematical relations and illustrative figures. Experimental data are critically assessed obtained by quantum transport measurement in a magnetic field on two-dimensional systems. The results are reported for a MOSFET silicon transistor and for GaAs-Al x Ga 1-x As heterostructures. The application is discussed of the quantized Hall effect in determining the fine structure constant or in implementing the resistance standard. (M.D.). 27 figs., 57 refs

Valley-chiral quantum Hall state in graphene superlattice structure

Science.gov (United States)

Tian, H. Y.; Tao, W. W.; Wang, J.; Cui, Y. H.; Xu, N.; Huang, B. B.; Luo, G. X.; Hao, Y. H.

2016-05-01

We theoretically investigate the quantum Hall effect in a graphene superlattice (GS) system, in which the two valleys of graphene are coupled together. In the presence of a perpendicular magnetic field, an ordinary quantum Hall effect is found with the sequence σxy=ν e^2/h(ν=0,+/-1,+/-2,\\cdots) . At the zeroth Hall platform, a valley-chiral Hall state stemming from the single K or K' valley is found and it is localized only on one sample boundary contributing to the longitudinal conductance but not to the Hall conductivity. Our findings may shed light on the graphene-based valleytronics applications.

Signatures of a Nonthermal Metastable State in Copropagating Quantum Hall Edge Channels

Science.gov (United States)

Itoh, Kosuke; Nakazawa, Ryo; Ota, Tomoaki; Hashisaka, Masayuki; Muraki, Koji; Fujisawa, Toshimasa

2018-05-01

A Tomonaga-Luttinger (TL) liquid is known as an integrable system, in which a nonequilibrium many-body state survives without relaxing to a thermalized state. This intriguing characteristic is tested experimentally in copropagating quantum Hall edge channels at bulk filling factor ν =2 . The unidirectional transport allows us to investigate the time evolution by measuring the spatial evolution of the electronic states. The initial state is prepared with a biased quantum point contact, and its spatial evolution is measured with a quantum-dot energy spectrometer. We find strong evidence for a nonthermal metastable state in agreement with the TL theory before the system relaxes to thermal equilibrium with coupling to the environment.

Air temperature gradient in large industrial hall

Science.gov (United States)

Karpuk, Michał; Pełech, Aleksander; Przydróżny, Edward; Walaszczyk, Juliusz; Szczęśniak, Sylwia

2017-11-01

In the rooms with dominant sensible heat load, volume airflow depends on many factors incl. pre-established temperature difference between exhaust and supply airflow. As the temperature difference is getting higher, airflow volume drops down, consequently, the cost of AHU is reduced. In high industrial halls with air exhaust grids located under the ceiling additional temperature gradient above working zone should be taken into consideration. In this regard, experimental research of the vertical air temperature gradient in high industrial halls were carried out for the case of mixing ventilation system The paper presents the results of air temperature distribution measurements in high technological hall (mechanically ventilated) under significant sensible heat load conditions. The supply airflow was delivered to the hall with the help of the swirl diffusers while exhaust grids were located under the hall ceiling. Basing on the air temperature distribution measurements performed on the seven pre-established levels, air temperature gradient in the area between 2.0 and 7.0 m above the floor was calculated and analysed.

A new CMOS Hall angular position sensor

Energy Technology Data Exchange (ETDEWEB)

Popovic, R.S.; Drljaca, P. [Swiss Federal Inst. of Tech., Lausanne (Switzerland); Schott, C.; Racz, R. [SENTRON AG, Zug (Switzerland)

2001-06-01

The new angular position sensor consists of a combination of a permanent magnet attached to a shaft and of a two-axis magnetic sensor. The permanent magnet produces a magnetic field parallel with the magnetic sensor plane. As the shaft rotates, the magnetic field also rotates. The magnetic sensor is an integrated combination of a CMOS Hall integrated circuit and a thin ferromagnetic disk. The CMOS part of the system contains two or more conventional Hall devices positioned under the periphery of the disk. The ferromagnetic disk converts locally a magnetic field parallel with the chip surface into a field perpendicular to the chip surface. Therefore, a conventional Hall element can detect an external magnetic field parallel with the chip surface. As the direction of the external magnetic field rotates in the chip plane, the output voltage of the Hall element varies as the cosine of the rotation angle. By placing the Hall elements at the appropriate places under the disk periphery, we may obtain the cosine signals shifted by 90 , 120 , or by any other angle. (orig.)

High-directivity planar antenna using controllable photonic bandgap material at microwave frequencies

International Nuclear Information System (INIS)

de Lustrac, A.; Gadot, F.; Akmansoy, E.; Brillat, T.

2001-01-01

In this letter, we experimentally demonstrate the capability of a controllable photonic bandgap (CPBG) material to conform the emitted radiation of a planar antenna at 12 GHz. The CPBG material is a variable conductance lattice fabricated with high-frequency PIN diodes soldered along metallic stripes on dielectric printed boards. Depending on the diode bias, the emitted radiation of the antenna can be either transmitted or totally reflected by the material. In the transmission state, the antenna radiation is spatially filtered by the CPBG material in a sharp beam perpendicular to the surface of the material. [copyright] 2001 American Institute of Physics

The Quasi-Electron Shell Structure of the Fractional Quantum Hall Effect

Science.gov (United States)

Haxton, Wick; Haxton, Daniel

2015-04-01

The fractional quantum Hall effect (FQHE) formulated on a sphere resembles the nuclear shell model, with the desired translationally invariant states having total angular momentum zero. This property was exploited by Ginocchio and Haxton (GH) to derive a new set of scalar operators and a first-Landau-level representation of the full set of hierarchy states (fillings 1/3, 2/5, 3/7, etc.), with overlaps identical to those of Jain, who used unphysical higher Landau levels excitations followed by numerical projection. We demonstrate that the GH operators produce an appealing description of the FQHE as shells filled by non-interacting quasi-electrons, or composite fermions. These are explicitly constructed, and their planar forms are also found. The evolution of the shells and their quasi-electrons is quite unusual. The connections with electron correlations and Laughlin's variational arguments are described. We discuss how ``new states'' found experimentally at fillings such as 4/11 and 5/13 fit into this scheme. Work support in part by the US DOE Offices of Nuclear Physics and Basic Energy Sciences.

The quantum Hall effects: Philosophical approach

Science.gov (United States)

Lederer, P.

2015-05-01

The Quantum Hall Effects offer a rich variety of theoretical and experimental advances. They provide interesting insights on such topics as gauge invariance, strong interactions in Condensed Matter physics, emergence of new paradigms. This paper focuses on some related philosophical questions. Various brands of positivism or agnosticism are confronted with the physics of the Quantum Hall Effects. Hacking's views on Scientific Realism, Chalmers' on Non-Figurative Realism are discussed. It is argued that the difficulties with those versions of realism may be resolved within a dialectical materialist approach. The latter is argued to provide a rational approach to the phenomena, theory and ontology of the Quantum Hall Effects.

Quantum critical Hall exponents

CERN Document Server

Lütken, C A

2014-01-01

We investigate a finite size "double scaling" hypothesis using data from an experiment on a quantum Hall system with short range disorder [1-3]. For Hall bars of width w at temperature T the scaling form is w(-mu)T(-kappa), where the critical exponent mu approximate to 0.23 we extract from the data is comparable to the multi-fractal exponent alpha(0) - 2 obtained from the Chalker-Coddington (CC) model [4]. We also use the data to find the approximate location (in the resistivity plane) of seven quantum critical points, all of which closely agree with the predictions derived long ago from the modular symmetry of a toroidal sigma-model with m matter fields [5]. The value nu(8) = 2.60513 ... of the localisation exponent obtained from the m = 8 model is in excellent agreement with the best available numerical value nu(num) = 2.607 +/- 0.004 derived from the CC-model [6]. Existing experimental data appear to favour the m = 9 model, suggesting that the quantum Hall system is not in the same universality class as th...

Hall devices improve electric motor efficiency

Science.gov (United States)

Haeussermann, W.

1979-01-01

Efficiency of electric motors and generators is reduced by radial magnetic forces created by symmetric fields within device. Forces are sensed and counteracted by Hall devices on excitation or control windings. Hall generators directly measure and provide compensating control of anu asymmetry, eliminating additional measurements needed for calibration feedback control loop.

Graphene and the universality of the quantum Hall effect

DEFF Research Database (Denmark)

Tzalenchuk, A.; Janssen, T. J.B.M.; Kazakova, O.

2013-01-01

The quantum Hall effect allows the standard for resistance to be defined in terms of the elementary charge and Planck's constant alone. The effect comprises the quantization of the Hall resistance in two-dimensional electron systems in rational fractions of RK=h/e2=25812.8074434(84) Ω (Mohr P. J....... the unconventional quantum Hall effect and then present in detail the route, which led to the most precise quantum Hall resistance universality test ever performed.......The quantum Hall effect allows the standard for resistance to be defined in terms of the elementary charge and Planck's constant alone. The effect comprises the quantization of the Hall resistance in two-dimensional electron systems in rational fractions of RK=h/e2=25812.8074434(84) Ω (Mohr P. J....... et al., Rev. Mod. Phys., 84 (2012) 1527), the resistance quantum. Despite 30 years of research into the quantum Hall effect, the level of precision necessary for metrology, a few parts per billion, has been achieved only in silicon and III-V heterostructure devices. In this lecture we show...

Interface adjustment and exchange coupling in the IrMn/NiFe system

Energy Technology Data Exchange (ETDEWEB)

Spizzo, F.; Tamisari, M.; Chinni, F.; Bonfiglioli, E.; Del Bianco, L., E-mail: lucia.delbianco@unife.it

2017-01-01

The exchange bias effect was investigated, in the 5–300 K temperature range, in samples of IrMn [100 Å]/NiFe [50 Å] (set A) and in samples with inverted layer-stacking sequence (set B), produced at room temperature by DC magnetron sputtering in a static magnetic field of 400 Oe. The samples of each set differ for the nominal thickness (t{sub Cu}) of a Cu spacer, grown at the interface between the antiferromagnetic and ferromagnetic layers, which was varied between 0 and 2 Å. It has been found out that the Cu insertion reduces the values of the exchange field and of the coercivity and can also affect their thermal evolution, depending on the stack configuration. Indeed, the latter also determines a peculiar variation of the exchange bias properties with time, shown and discussed with reference to the samples without Cu of the two sets. The results have been explained considering that, in this system, the exchange coupling mechanism is ruled by the glassy magnetic behavior of the IrMn spins located at the interface with the NiFe layer. Varying the stack configuration and t{sub Cu} results in a modulation of the structural and magnetic features of the interface, which ultimately affects the spins dynamics of the glassy IrMn interfacial component. - Highlights: • Exchange bias effect in IrMn/NiFe samples with interfacial Cu spacer. • A variation of exchange bias with time is observed in as-deposited samples. • Magnetic modification of the interface by varying the stack sequence and Cu thickness. • Interface adjustment affects the dynamics of interfacial IrMn spins. • The exchange bias properties can be tuned by interface adjustment.

Bead Capture on Magnetic Sensors in a Microfluidic System

DEFF Research Database (Denmark)

Østerberg, Frederik Westergaard; Dalslet, Bjarke Thomas; Damsgaard, Christian Danvad

2009-01-01

The accumulation of magnetic beads by gravitational sedimentation and magnetic capture on a planar Hall-effect sensor integrated in a microfluidic channel is studied systematically as a function of the bead concentration, the fluid flow rate, and the sensor bias current. It is demonstrated...... that the sedimentation flux is proportional to the bead concentration and has a power law relation to the fluid flow rate. The mechanisms for the bead accumulation are investigated and it is found that gravitational sedimentation dominates the bead accumulation, whereas the stability of the sedimented beads against...

Accurate micro Hall effect measurements on scribe line pads

DEFF Research Database (Denmark)

Østerberg, Frederik Westergaard; Petersen, Dirch Hjorth; Wang, Fei

2009-01-01

Hall mobility and sheet carrier density are important parameters to monitor in advanced semiconductor production. If micro Hall effect measurements are done on small pads in scribe lines, these parameters may be measured without using valuable test wafers. We report how Hall mobility can...... be extracted from micro four-point measurements performed on a rectangular pad. The dimension of the investigated pad is 400 × 430 ¿m2, and the probe pitches range from 20 ¿m to 50 ¿m. The Monte Carlo method is used to find the optimal way to perform the Hall measurement and extract Hall mobility most...

Extrinsic spin Hall effect in graphene

Science.gov (United States)

Rappoport, Tatiana

The intrinsic spin-orbit coupling in graphene is extremely weak, making it a promising spin conductor for spintronic devices. In addition, many applications also require the generation of spin currents in graphene. Theoretical predictions and recent experimental results suggest one can engineer the spin Hall effect in graphene by greatly enhancing the spin-orbit coupling in the vicinity of an impurity. The extrinsic spin Hall effect then results from the spin-dependent skew scattering of electrons by impurities in the presence of spin-orbit interaction. This effect can be used to efficiently convert charge currents into spin-polarized currents. I will discuss recent experimental results on spin Hall effect in graphene decorated with adatoms and metallic cluster and show that a large spin Hall effect can appear due to skew scattering. While this spin-orbit coupling is small if compared with what it is found in metals, the effect is strongly enhanced in the presence of resonant scattering, giving rise to robust spin Hall angles. I will present our single impurity scattering calculations done with exact partial-wave expansions and complement the analysis with numerical results from a novel real-space implementation of the Kubo formalism for tight-binding Hamiltonians. The author acknowledges the Brazilian agencies CNPq, CAPES, FAPERJ and INCT de Nanoestruturas de Carbono for financial support.

Scanning tunneling microscopy measurements of the spin Hall effect in tungsten films by using iron-coated tungsten tips

Science.gov (United States)

Xie, Ting; Dreyer, Michael; Bowen, David; Hinkel, Dan; Butera, R. E.; Krafft, Charles; Mayergoyz, Isaak

2018-05-01

Scanning tunneling microscopy experiments using iron-coated tungsten tips and current-carrying tungsten films have been conducted. An asymmetry of the tunneling current with respect to the change of the direction of the bias current through a tungsten film has been observed. It is argued that this asymmetry is a manifestation of the spin Hall effect in the current-carrying tungsten film. Nanoscale variations of this asymmetry across the tungsten film have been studied by using the scanning tunneling microscopy technique.

Planar graphs theory and algorithms

CERN Document Server

Nishizeki, T

1988-01-01

Collected in this volume are most of the important theorems and algorithms currently known for planar graphs, together with constructive proofs for the theorems. Many of the algorithms are written in Pidgin PASCAL, and are the best-known ones; the complexities are linear or 0(nlogn). The first two chapters provide the foundations of graph theoretic notions and algorithmic techniques. The remaining chapters discuss the topics of planarity testing, embedding, drawing, vertex- or edge-coloring, maximum independence set, subgraph listing, planar separator theorem, Hamiltonian cycles, and single- or multicommodity flows. Suitable for a course on algorithms, graph theory, or planar graphs, the volume will also be useful for computer scientists and graph theorists at the research level. An extensive reference section is included.

Optimization of Cylindrical Hall Thrusters

International Nuclear Information System (INIS)

Raitses, Yevgeny; Smirnov, Artem; Granstedt, Erik; Fisch, Nathaniel J.

2007-01-01

The cylindrical Hall thruster features high ionization efficiency, quiet operation, and ion acceleration in a large volume-to-surface ratio channel with performance comparable with the state-of-the-art annular Hall thrusters. These characteristics were demonstrated in low and medium power ranges. Optimization of miniaturized cylindrical thrusters led to performance improvements in the 50-200W input power range, including plume narrowing, increased thruster efficiency, reliable discharge initiation, and stable operation.

Optimization of Cylindrical Hall Thrusters

International Nuclear Information System (INIS)

Raitses, Yevgeny; Smirnov, Artem; Granstedt, Erik; Fi, Nathaniel J.

2007-01-01

The cylindrical Hall thruster features high ionization efficiency, quiet operation, and ion acceleration in a large volume-to-surface ratio channel with performance comparable with the state-of-the-art annular Hall thrusters. These characteristics were demonstrated in low and medium power ranges. Optimization of miniaturized cylindrical thrusters led to performance improvements in the 50-200W input power range, including plume narrowing, increased thruster efficiency, reliable discharge initiation, and stable operation

Spin-singlet hierarchy in the fractional quantum Hall effect

OpenAIRE

Ino, Kazusumi

1999-01-01

We show that the so-called permanent quantum Hall states are formed by the integer quantum Hall effects on the Haldane-Rezayi quantum Hall state. Novel conformal field theory description along with this picture is deduced. The odd denominator plateaux observed around $\

Anisotropic intrinsic spin Hall effect in quantum wires

International Nuclear Information System (INIS)

Cummings, A W; Akis, R; Ferry, D K

2011-01-01

We use numerical simulations to investigate the spin Hall effect in quantum wires in the presence of both Rashba and Dresselhaus spin-orbit coupling. We find that the intrinsic spin Hall effect is highly anisotropic with respect to the orientation of the wire, and that the nature of this anisotropy depends strongly on the electron density and the relative strengths of the Rashba and Dresselhaus spin-orbit couplings. In particular, at low densities, when only one subband of the quantum wire is occupied, the spin Hall effect is strongest for electron momentum along the [1-bar 10] axis, which is the opposite of what is expected for the purely 2D case. In addition, when more than one subband is occupied, the strength and anisotropy of the spin Hall effect can vary greatly over relatively small changes in electron density, which makes it difficult to predict which wire orientation will maximize the strength of the spin Hall effect. These results help to illuminate the role of quantum confinement in spin-orbit-coupled systems, and can serve as a guide for future experimental work on the use of quantum wires for spin-Hall-based spintronic applications. (paper)

Hidden multidimensional social structure modeling applied to biased social perception

Science.gov (United States)

Maletić, Slobodan; Zhao, Yi

2018-02-01

Intricacies of the structure of social relations are realized by representing a collection of overlapping opinions as a simplicial complex, thus building latent multidimensional structures, through which agents are, virtually, moving as they exchange opinions. The influence of opinion space structure on the distribution of opinions is demonstrated by modeling consensus phenomena when the opinion exchange between individuals may be affected by the false consensus effect. The results indicate that in the cases with and without bias, the road toward consensus is influenced by the structure of multidimensional space of opinions, and in the biased case, complete consensus is achieved. The applications of proposed modeling framework can easily be generalized, as they transcend opinion formation modeling.

Imaging the Conductance of Integer and Fractional Quantum Hall Edge States

Directory of Open Access Journals (Sweden)

Nikola Pascher

2014-01-01

Full Text Available We measure the conductance of a quantum point contact while the biased tip of a scanning probe microscope induces a depleted region in the electron gas underneath. At a finite magnetic field, we find plateaus in the real-space maps of the conductance as a function of tip position at integer (ν=1, 2, 3, 4, 6, 8 and fractional (ν=1/3, 2/3, 5/3, 4/5 values of transmission. They resemble theoretically predicted compressible and incompressible stripes of quantum Hall edge states. The scanning tip allows us to shift the constriction limiting the conductance in real space over distances of many microns. The resulting stripes of integer and fractional filling factors are rugged on scales of a few hundred nanometers, i.e., on a scale much smaller than the zero-field elastic mean free path of the electrons. Our experiments demonstrate that microscopic inhomogeneities are relevant even in high-quality samples and lead to locally strongly fluctuating widths of incompressible regions even down to their complete suppression for certain tip positions. The macroscopic quantization of the Hall resistance measured experimentally in a nonlocal contact configuration survives in the presence of these inhomogeneities, and the relevant local energy scale for the ν=2 state turns out to be independent of tip position.

The Hall module of an exact category with duality

OpenAIRE

Young, Matthew B.

2012-01-01

We construct from a finitary exact category with duality a module over its Hall algebra, called the Hall module, encoding the first order self-dual extension structure of the category. We study in detail Hall modules arising from the representation theory of a quiver with involution. In this case we show that the Hall module is naturally a module over the specialized reduced sigma-analogue of the quantum Kac-Moody algebra attached to the quiver. For finite type quivers, we explicitly determin...

Theory of spin Hall effect

OpenAIRE

Chudnovsky, Eugene M.

2007-01-01

An extension of Drude model is proposed that accounts for spin and spin-orbit interaction of charge carriers. Spin currents appear due to combined action of the external electric field, crystal field and scattering of charge carriers. The expression for spin Hall conductivity is derived for metals and semiconductors that is independent of the scattering mechanism. In cubic metals, spin Hall conductivity $\\sigma_s$ and charge conductivity $\\sigma_c$ are related through $\\sigma_s = [2 \\pi \\hbar...

Anode sheath in Hall thrusters

International Nuclear Information System (INIS)

Dorf, L.; Semenov, V.; Raitses, Y.

2003-01-01

A set of hydrodynamic equations is used to describe quasineutral plasma in ionization and acceleration regions of a Hall thruster. The electron distribution function and Poisson equation are invoked for description of a near-anode region. Numerical solutions suggest that steady-state operation of a Hall thruster can be achieved at different anode sheath regimes. It is shown that the anode sheath depends on the thruster operating conditions, namely the discharge voltage and the mass flow rate

Quantum Hall effect in quantum electrodynamics

International Nuclear Information System (INIS)

Penin, Alexander A.

2009-01-01

We consider the quantum Hall effect in quantum electrodynamics and find a deviation from the quantum-mechanical prediction for the Hall conductivity due to radiative antiscreening of electric charge in an external magnetic field. A weak dependence of the universal von Klitzing constant on the magnetic field strength, which can possibly be observed in a dedicated experiment, is predicted

In vitro quantification of the performance of model-based mono-planar and bi-planar fluoroscopy for 3D joint kinematics estimation.

Science.gov (United States)

Tersi, Luca; Barré, Arnaud; Fantozzi, Silvia; Stagni, Rita

2013-03-01

Model-based mono-planar and bi-planar 3D fluoroscopy methods can quantify intact joints kinematics with performance/cost trade-off. The aim of this study was to compare the performances of mono- and bi-planar setups to a marker-based gold-standard, during dynamic phantom knee acquisitions. Absolute pose errors for in-plane parameters were lower than 0.6 mm or 0.6° for both mono- and bi-planar setups. Mono-planar setups resulted critical in quantifying the out-of-plane translation (error bi-planar in quantifying the rotation along bone longitudinal axis (error bi-planar (error comparable to bi-planar, but with halved computational costs, halved segmentation time and halved ionizing radiation dose. Bi-planar analysis better compensated for the out-of-plane uncertainty that is differently propagated to relative kinematics depending on the setup. To take its full benefits, the motion task to be investigated should be designed to maintain the joint inside the visible volume introducing constraints with respect to mono-planar analysis.

Quantized Hall conductance as a topological invariant

International Nuclear Information System (INIS)

Niu, Q.; Thouless, Ds.J.; Wu, Y.S.

1984-10-01

Whenever the Fermi level lies in a gap (or mobility gap) the bulk Hall conductance can be expressed in a topologically invariant form showing the quantization explicitly. The new formulation generalizes the earlier result by TKNN to the situation where many body interaction and substrate disorder are also present. When applying to the fractional quantized Hall effect we draw the conclusion that there must be a symmetry breaking in the many body ground state. The possibility of writing the fractionally quantized Hall conductance as a topological invariant is also carefully discussed. 19 references

Robust integer and fractional helical modes in the quantum Hall effect

Science.gov (United States)

Ronen, Yuval; Cohen, Yonatan; Banitt, Daniel; Heiblum, Moty; Umansky, Vladimir

2018-04-01

Electronic systems harboring one-dimensional helical modes, where spin and momentum are locked, have lately become an important field of their own. When coupled to a conventional superconductor, such systems are expected to manifest topological superconductivity; a unique phase hosting exotic Majorana zero modes. Even more interesting are fractional helical modes, yet to be observed, which open the route for realizing generalized parafermions. Possessing non-Abelian exchange statistics, these quasiparticles may serve as building blocks in topological quantum computing. Here, we present a new approach to form protected one-dimensional helical edge modes in the quantum Hall regime. The novel platform is based on a carefully designed double-quantum-well structure in a GaAs-based system hosting two electronic sub-bands; each tuned to the quantum Hall effect regime. By electrostatic gating of different areas of the structure, counter-propagating integer, as well as fractional, edge modes with opposite spins are formed. We demonstrate that, due to spin protection, these helical modes remain ballistic over large distances. In addition to the formation of helical modes, this platform can serve as a rich playground for artificial induction of compounded fractional edge modes, and for construction of edge-mode-based interferometers.

Commemorative Symposium on the Hall Effect and its Applications

CERN Document Server

Westgate, C

1980-01-01

In 1879, while a graduate student under Henry Rowland at the Physics Department of The Johns Hopkins University, Edwin Herbert Hall discovered what is now universally known as the Hall effect. A symposium was held at The Johns Hopkins University on November 13, 1979 to commemorate the lOOth anniversary of the discovery. Over 170 participants attended the symposium which included eleven in­ vited lectures and three speeches during the luncheon. During the past one hundred years, we have witnessed ever ex­ panding activities in the field of the Hall effect. The Hall effect is now an indispensable tool in the studies of many branches of condensed matter physics, especially in metals, semiconductors, and magnetic solids. Various components (over 200 million!) that utilize the Hall effect have been successfully incorporated into such devices as keyboards, automobile ignitions, gaussmeters, and satellites. This volume attempts to capture the important aspects of the Hall effect and its applications. It includes t...

Hall effect enhanced low-field sensitivity in a three-contact extraordinary magnetoresistance sensor

KAUST Repository

Sun, Jian

2012-06-06

An extraordinary magnetoresistance (EMR) device with a 3-contact geometry has been fabricated and characterized. A large enhancement of the output sensitivity at low magnetic fields compared to the conventional EMR device has been found, which can be attributed to an additional influence coming from the Hall effect. Output sensitivities of 0.19 mV/T at zero-field and 0.2 mV/T at 0.01 T have been measured in the device, which is equivalent to the ones of the conventional EMR sensors with a bias of ∼0.04 T. The exceptional performance of EMR sensors in the high field region is maintained in the 3-contact device.

Halls Lake 1990

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — Salt marsh habitats along the shoreline of Halls Lake are threatened by wave erosion, but the reconstruction of barrier islands to reduce this erosion will modify or...

Nobel Prize in physics 1985: Quantum Hall effect

International Nuclear Information System (INIS)

Herrmann, R.

1986-01-01

The conditions (like very strong magnetic fields, ultralow temperatures, and occurrence of a two-dimensional electron gas in microelectronic structures) for the measurement of the quantum Hall effect are explained. Two possible measuring methods are described. Measuring results for p-Si-MOSFET, GaAs/AlGaAs heterojuntions and grain boundaries in InSb crystals are reported. Differences between normal (integer) and fractional quantum Hall effect are discussed. One of the important consequences is that by means of the quantum Hall effect the value h/e 2 can be determined with very high accuracy. In 1985 Klaus von Klitzing was awarded the Nobel Prize for his work on the quantum Hall effect

Scanning tunneling microscopy measurements of the spin Hall effect in tungsten films by using iron-coated tungsten tips

Directory of Open Access Journals (Sweden)

Ting Xie

2018-05-01

Full Text Available Scanning tunneling microscopy experiments using iron-coated tungsten tips and current-carrying tungsten films have been conducted. An asymmetry of the tunneling current with respect to the change of the direction of the bias current through a tungsten film has been observed. It is argued that this asymmetry is a manifestation of the spin Hall effect in the current-carrying tungsten film. Nanoscale variations of this asymmetry across the tungsten film have been studied by using the scanning tunneling microscopy technique.

Intrinsic superspin Hall current

Science.gov (United States)

Linder, Jacob; Amundsen, Morten; Risinggârd, Vetle

2017-09-01

We discover an intrinsic superspin Hall current: an injected charge supercurrent in a Josephson junction containing heavy normal metals and a ferromagnet generates a transverse spin supercurrent. There is no accompanying dissipation of energy, in contrast to the conventional spin Hall effect. The physical origin of the effect is an antisymmetric spin density induced among transverse modes ky near the interface of the superconductor arising due to the coexistence of p -wave and conventional s -wave superconducting correlations with a belonging phase mismatch. Our predictions can be tested in hybrid structures including thin heavy metal layers combined with strong ferromagnets and ordinary s -wave superconductors.

The quantum Hall's effect: A quantum electrodynamic phenomenon

International Nuclear Information System (INIS)

Arbab, A. I.

2012-01-01

We have applied Maxwell's equations to study the physics of quantum Hall's effect. The electromagnetic properties of this system are obtained. The Hall's voltage, V H = 2πħ 2 n s /em, where n s is the electron number density, for a 2-dimensional system, and h = 2πħ is the Planck's constant, is found to coincide with the voltage drop across the quantum capacitor. Consideration of the cyclotronic motion of electrons is found to give rise to Hall's resistance. Ohmic resistances in the horizontal and vertical directions have been found to exist before equilibrium state is reached. At a fundamental level, the Hall's effect is found to be equivalent to a resonant LCR circuit with L H = 2π m/e 2 n s and C H = me 2 /2πħ 2 n s satisfying the resonance condition with resonant frequency equal to the inverse of the scattering (relaxation) time, τ s . The Hall's resistance is found to be R H = √L H /C H . The Hall's resistance may be connected with the impedance that the electron wave experiences when it propagates in the 2-dimensional gas. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Spontaneous Hall effect in a chiral p-wave superconductor

Science.gov (United States)

Furusaki, Akira; Matsumoto, Masashige; Sigrist, Manfred

2001-08-01

In a chiral superconductor with broken time-reversal symmetry a ``spontaneous Hall effect'' may be observed. We analyze this phenomenon by taking into account the surface properties of a chiral superconductor. We identify two main contributions to the spontaneous Hall effect. One contribution originates from the Bernoulli (or Lorentz) force due to spontaneous currents running along the surfaces of the superconductor. The other contribution has a topological origin and is related to the intrinsic angular momentum of Cooper pairs. The latter can be described in terms of a Chern-Simons-like term in the low-energy field theory of the superconductor and has some similarities with the quantum Hall effect. The spontaneous Hall effect in a chiral superconductor is, however, nonuniversal. Our analysis is based on three approaches to the problem: a self-consistent solution of the Bogoliubov-de Gennes equation, a generalized Ginzburg-Landau theory, and a hydrodynamic formulation. All three methods consistently lead to the same conclusion that the spontaneous Hall resistance of a two-dimensional superconducting Hall bar is of order h/(ekFλ)2, where kF is the Fermi wave vector and λ is the London penetration depth; the Hall resistance is substantially suppressed from a quantum unit of resistance. Experimental issues in measuring this effect are briefly discussed.

Magnetic properties of exchange biased and of unbiased oxide/permalloy thin layers: a ferromagnetic resonance and Brillouin scattering study

Energy Technology Data Exchange (ETDEWEB)

Zighem, F; Roussigne, Y; Cherif, S-M; Moch, P [Laboratoire des Proprietes Mecaniques et Thermodynamiques des Materiaux, CNRS UPR 9001, Universite Paris Nord, 93430 Villetaneuse (France); Ben Youssef, J [Laboratoire de Magnetisme de Bretagne, CNRS, Universite de Bretagne Occidentale, 29285 Brest (France); Paumier, F, E-mail: fatih.zighem@cea.f [Institut Pprime, CNRS UPR 3346, Universite de Poitiers, ENSMA, 86962 Futuroscope (France)

2010-10-13

Microstrip ferromagnetic resonance and Brillouin scattering are used to provide a comparative determination of the magnetic parameters of thin permalloy layers interfaced with a non-magnetic (Al{sub 2}O{sub 3}) or with an antiferromagnetic oxide (NiO). It results from our microstructural study that no preferential texture is favoured in the observed polycrystalline sublayers. It is shown that the perpendicular anisotropy can be monitored using an interfacial surface energy term which is practically independent of the nature of the interface. In the interval of thicknesses investigated (5-25 nm) the saturation magnetization does not significantly differ from the reported one in bulk permalloy. In-plane uniaxial anisotropy and exchange bias anisotropy are also derived from the study of the dynamic magnetic excitations and compared with our independent evaluations using conventional magnetometry.

Anomalous Hall effect in Fe/Gd bilayers

KAUST Repository

Xu, W. J.; Zhang, Bei; Liu, Z. X.; Wang, Z.; Li, W.; Wu, Z. B.; Yu, R. H.; Zhang, Xixiang

2010-01-01

Non-monotonic dependence of anomalous Hall resistivity on temperature and magnetization, including a sign change, was observed in Fe/Gd bilayers. To understand the intriguing observations, we fabricated the Fe/Gd bilayers and single layers of Fe and Gd simultaneously. The temperature and field dependences of longitudinal resistivity, Hall resistivity and magnetization in these films have also been carefully measured. The analysis of these data reveals that these intriguing features are due to the opposite signs of Hall resistivity/or spin polarization and different Curie temperatures of Fe and Gd single-layer films. Copyright (C) EPLA, 2010

Anomalous Hall effect in Fe/Gd bilayers

KAUST Repository

Xu, W. J.

2010-04-01

Non-monotonic dependence of anomalous Hall resistivity on temperature and magnetization, including a sign change, was observed in Fe/Gd bilayers. To understand the intriguing observations, we fabricated the Fe/Gd bilayers and single layers of Fe and Gd simultaneously. The temperature and field dependences of longitudinal resistivity, Hall resistivity and magnetization in these films have also been carefully measured. The analysis of these data reveals that these intriguing features are due to the opposite signs of Hall resistivity/or spin polarization and different Curie temperatures of Fe and Gd single-layer films. Copyright (C) EPLA, 2010

Anomalous Hall effect

Czech Academy of Sciences Publication Activity Database

Nagaosa, N.; Sinova, Jairo; Onoda, S.; MacDonald, A. H.; Ong, N. P.

2010-01-01

Roč. 82, č. 2 (2010), s. 1539-1592 ISSN 0034-6861 Institutional research plan: CEZ:AV0Z10100521 Keywords : anomalous Hall effect * spintronics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 51.695, year: 2010

Synergy of exchange bias with superconductivity in ferromagnetic-superconducting layered hybrids: the influence of in-plane and out-of-plane magnetic order on superconductivity

International Nuclear Information System (INIS)

Stamopoulos, D; Manios, E; Pissas, M

2007-01-01

It is generally believed that superconductivity and magnetism are two antagonistic long-range phenomena. However, as was preliminarily highlighted in Stamopoulos et al (2007 Phys. Rev. B 75 014501), and extensively studied in this work, under specific circumstances these phenomena instead of being detrimental to each other may even become cooperative so that their synergy may promote the superconducting properties of a hybrid structure. Here, we have studied systematically the magnetic and transport behavior of such exchange biased hybrids that are comprised of ferromagnetic (FM) Ni 80 Fe 20 and low-T c superconducting (SC) Nb for the case where the magnetic field is applied parallel to the specimens. Two structures have been studied: FM-SC-FM trilayers (TLs) and FM-SC bilayers (BLs). Detailed magnetization data on the longitudinal and transverse magnetic components are presented for both the normal and superconducting states. These data are compared to systematic transport measurements including I-V characteristics. The comparison of the exchange biased BLs and TLs that are studied here with the plain ones studied in Stamopoulos et al (2007 Phys. Rev. B 75 184504) enable us to reveal an underlying parameter that may falsify the interpretation of the transport properties of relevant FM-SC-FM TLs and FM-SC BLs investigated in the recent literature: the underlying mechanism motivating the extreme magnetoresistance peaks in the TLs relates to the suppression of superconductivity mainly due to the magnetic coupling of the two FM layers as the out-of-plane rotation of their magnetizations takes place across the coercive field where stray fields emerge in their whole surface owing to the multidomain magnetic state that they acquire. The relative in-plane magnetization configuration of the outer FM layers exerts a secondary contribution on the SC interlayer. Since the exchange bias directly controls the in-plane magnetic order it also controls the out-of-plane rotation of

Hall effect in a strong magnetic field: Direct comparisons of compressible magnetohydrodynamics and the reduced Hall magnetohydrodynamic equations

International Nuclear Information System (INIS)

Martin, L. N.; Dmitruk, P.; Gomez, D. O.

2010-01-01

In this work we numerically test a model of Hall magnetohydrodynamics in the presence of a strong mean magnetic field: the reduced Hall magnetohydrodynamic model (RHMHD) derived by [Gomez et al., Phys. Plasmas 15, 102303 (2008)] with the addition of weak compressible effects. The main advantage of this model lies in the reduction of computational cost. Nevertheless, up until now the degree of agreement with the original Hall MHD system and the range of validity in a regime of turbulence were not established. In this work direct numerical simulations of three-dimensional Hall MHD turbulence in the presence of a strong mean magnetic field are compared with simulations of the weak compressible RHMHD model. The results show that the degree of agreement is very high (when the different assumptions of RHMHD, such as spectral anisotropy, are satisfied). Nevertheless, when the initial conditions are isotropic but the mean magnetic field is maintained strong, the results differ at the beginning but asymptotically reach a good agreement at relatively short times. We also found evidence that the compressibility still plays a role in the dynamics of these systems, and the weak compressible RHMHD model is able to capture these effects. In conclusion the weak compressible RHMHD model is a valid approximation of the Hall MHD turbulence in the relevant physical context.

Measured Early Lateral Energy Fractions in Concert Halls and Opera Houses

Science.gov (United States)

BARRON, M.

2000-04-01

In the 30 years since early lateral reflections were first suggested as important for concert halls, spatial impression and source broadening have become almost universally accepted as essential characteristics of halls with good acoustics. Two objective measures of source broadening have been proposed. Measured values of the best defined of these measures, the early lateral energy fraction (LF), are considered here. Results from two independent measurement surveys are discussed. Comparisons of LF values by hall show a significant link between hall mean LF and hall width. There is however considerable overlap between measured LF values in different halls so the relevance of describing halls by their mean early lateral energy fraction values is questionable. The behaviour of LF values within auditoria is discussed for different concert hall plan forms and within opera houses. A measure of source broadening including sound level is proposed and results considered in the context of auditorium design.

Destruction of the fractional quantum Hall effect by disorder

International Nuclear Information System (INIS)

Laughlin, R.B.

1985-07-01

It is suggested that Hall steps in the fractional quantum Hall effect are physically similar to those in the ordinary quantum Hall effect. This proposition leads to a simple scaling diagram containing a new type of fixed point, which is identified with the destruction of the fractional states by disorder. 15 refs., 3 figs

A Hall probe technique for characterizing high-temperature superconductors

International Nuclear Information System (INIS)

Zhang, J.; Sheldon, P.; Ahrenkiel, R.K.

1992-01-01

Thin-film GaAs Hall probes were fabricated by molecular beam epitaxy technology. A contactless technique was developed to characterize thin-film, high-temperature superconducting (HTSC) materials. The Hall probes detected the ac magnetic flux penetration through the high-temperature superconducting materials. The Hall detector has advantages over the mutual inductance magnetic flux detector

Behaviour of a planar Langmuir probe in a laser ablation plasma

International Nuclear Information System (INIS)

Doggett, B.; Budtz-Joergensen, C.; Lunney, J.G.; Sheerin, P.; Turner, M.M.

2005-01-01

We have investigated some aspects of the behaviour of planar Langmuir probes in the supersonic plasma flow produced by laser ablation of solid materials in vacuum. The ablation was done using a 26 ns, 248 nm excimer laser, irradiating a silver target at 1 J cm -2 . We have compared the behaviour of the probe when it is orientated perpendicular and parallel to the plasma flow. In particular, we have shown that it is possible to adapt an analytical model, developed for plasma immersion ion implantation, to quantitatively describe the variation of the ion current with probe bias for the case when the plasma flow is along the probe surface. The electron temperature was also measured

Intrinsic quantum spin Hall and anomalous Hall effects in h-Sb/Bi epitaxial growth on a ferromagnetic MnO2 thin film.

Science.gov (United States)

Zhou, Jian; Sun, Qiang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru

2016-06-07

Exploring a two-dimensional intrinsic quantum spin Hall state with a large band gap as well as an anomalous Hall state in realizable materials is one of the most fundamental and important goals for future applications in spintronics, valleytronics, and quantum computing. Here, by combining first-principles calculations with a tight-binding model, we predict that Sb or Bi can epitaxially grow on a stable and ferromagnetic MnO2 thin film substrate, forming a flat honeycomb sheet. The flatness of Sb or Bi provides an opportunity for the existence of Dirac points in the Brillouin zone, with its position effectively tuned by surface hydrogenation. The Dirac points in spin up and spin down channels split due to the proximity effects induced by MnO2. In the presence of both intrinsic and Rashba spin-orbit coupling, we find two band gaps exhibiting a large band gap quantum spin Hall state and a nearly quantized anomalous Hall state which can be tuned by adjusting the Fermi level. Our findings provide an efficient way to realize both quantized intrinsic spin Hall conductivity and anomalous Hall conductivity in a single material.

Plasmon Geometric Phase and Plasmon Hall Shift

Science.gov (United States)

Shi, Li-kun; Song, Justin C. W.

2018-04-01

The collective plasmonic modes of a metal comprise a simple pattern of oscillating charge density that yields enhanced light-matter interaction. Here we unveil that beneath this familiar facade plasmons possess a hidden internal structure that fundamentally alters its dynamics. In particular, we find that metals with nonzero Hall conductivity host plasmons with an intricate current density configuration that sharply departs from that of ordinary zero Hall conductivity metals. This nontrivial internal structure dramatically enriches the dynamics of plasmon propagation, enabling plasmon wave packets to acquire geometric phases as they scatter. At boundaries, these phases accumulate allowing plasmon waves that reflect off to experience a nonreciprocal parallel shift. This plasmon Hall shift, tunable by Hall conductivity as well as plasmon wavelength, displaces the incident and reflected plasmon trajectories and can be readily probed by near-field photonics techniques. Anomalous plasmon geometric phases dramatically enrich the nanophotonics toolbox, and yield radical new means for directing plasmonic beams.

Energy spectrum, dissipation, and spatial structures in reduced Hall magnetohydrodynamic

Energy Technology Data Exchange (ETDEWEB)

Martin, L. N.; Dmitruk, P. [Departamento de Fisica, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires and IFIBA, CONICET, Ciudad Universitaria, 1428 Buenos Aires (Argentina); Gomez, D. O. [Departamento de Fisica, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires and IFIBA, CONICET, Ciudad Universitaria, 1428 Buenos Aires (Argentina); Instituto de Astronomia y Fisica del Espacio, CONICET, Buenos Aires (Argentina)

2012-05-15

We analyze the effect of the Hall term in the magnetohydrodynamic turbulence under a strong externally supported magnetic field, seeing how this changes the energy cascade, the characteristic scales of the flow, and the dynamics of global magnitudes, with particular interest in the dissipation. Numerical simulations of freely evolving three-dimensional reduced magnetohydrodynamics are performed, for different values of the Hall parameter (the ratio of the ion skin depth to the macroscopic scale of the turbulence) controlling the impact of the Hall term. The Hall effect modifies the transfer of energy across scales, slowing down the transfer of energy from the large scales up to the Hall scale (ion skin depth) and carrying faster the energy from the Hall scale to smaller scales. The final outcome is an effective shift of the dissipation scale to larger scales but also a development of smaller scales. Current sheets (fundamental structures for energy dissipation) are affected in two ways by increasing the Hall effect, with a widening but at the same time generating an internal structure within them. In the case where the Hall term is sufficiently intense, the current sheet is fully delocalized. The effect appears to reduce impulsive effects in the flow, making it less intermittent.

Spin disorder effect in anomalous Hall effect in MnGa

Science.gov (United States)

Mendonça, A. P. A.; Varalda, J.; Schreiner, W. H.; Mosca, D. H.

2017-12-01

We report on resistivity and Hall effect in MnGa thin films grown by molecular beam epitaxy on GaAs substrates. Highly (1 1 1)-textured MnGa film with L10 structure exhibits hard magnetic properties with coercivities as high as 20 kOe and spin disorder mechanisms contributing to the Hall conductivity at room temperature. Density functional theory calculations were performed to determine the intrinsic Berry curvature in the momentum space with chiral spin structure that results in an anomalous Hall conductivity of 127 (Ωcm)-1 comparable to that measured at low temperature. In addition to residual and side-jump contributions, which are enhanced by thermal activation, both anomalous Hall conductivity and Hall angle increase between 100 K and room temperature. The present results reinforce the potential of Mn-Ga system for developing Hall effect-based spintronic devices.

Effect of Ta buffer and NiFe seed layers on pulsed-DC magnetron sputtered Ir{sub 20}Mn{sub 80}/Co{sub 90}Fe{sub 10} exchange bias

Energy Technology Data Exchange (ETDEWEB)

Oksuezoglu, Ramis Mustafa, E-mail: rmoksuzoglu@anadolu.edu.t [University of Anadolu, Faculty of Engineering and Architecture, Department of Materials Sciences and Engineering, Iki Eyluel Campus, 26555 Eskisehir (Turkey); Yildirim, Mustafa; Cinar, Hakan [University of Anadolu, Faculty of Engineering and Architecture, Department of Materials Sciences and Engineering, Iki Eyluel Campus, 26555 Eskisehir (Turkey); Hildebrandt, Erwin; Alff, Lambert [Department of Materials Sciences, Darmstadt University of Technology, Petersenstrasse 23, D-64287 Darmstadt (Germany)

2011-07-15

A systematic investigation has been done on the correlation between texture, grain size evolution and magnetic properties in Ta/Ni{sub 81}Fe{sub 19}/Ir{sub 20}Mn{sub 80}/Co{sub 90}Fe{sub 10}/Ta exchange bias in dependence of Ta buffer and NiFe seed layer thickness in the range of 2-10 nm, deposited by pulsed DC magnetron sputtering technique. A strong dependence of <1 1 1> texture on the Ta/NiFe thicknesses was found, where the reducing and increasing texture was correlated with exchange bias field and unidirectional anisotropy energy constant at both NiFe/IrMn and IrMn/CoFe interfaces. However, a direct correlation between average grain size in IrMn and H{sub ex} and H{sub c} was not observed. L1{sub 2} phase IrMn{sub 3} could be formed by thickness optimization of Ta/NiFe layers by deposition at room temperature, for which the maximum exchange coupling parameters were achieved. We conclude finally that the coercivity is mainly influenced by texture induced interfacial effects at NiFe/IrMn/CoFe interfaces developing with Ta/NiFe thicknesses. - Research highlights: We discussed the influence of Ta/NiFe thicknesses on structure and grain size in AF layer and texture. A direct correlation between the <1 1 1> texture and exchange coupling was found. A direct relation between average grain size and H{sub ex} and H{sub c} was not observed. L1{sub 2} phase IrMn{sub 3} was formed by deposition at room temperature for Ta (5-6 nm)/NiFe (6-8 nm). We conclude that the coercivity is influenced by order/disorder at NiFe/IrMn/CoFe interfaces.

L'effet Hall Quantique

Science.gov (United States)

Samson, Thomas

Nous proposons une methode permettant d'obtenir une expression pour la conductivite de Hall de structures electroniques bidimensionnelles et nous examinons celle -ci a la limite d'une temperature nulle dans le but de verifier l'effet Hall quantique. Nous allons nous interesser essentiellement a l'effet Hall quantique entier et aux effets fractionnaires inferieurs a un. Le systeme considere est forme d'un gaz d'electrons en interaction faible avec les impuretes de l'echantillon. Le modele du gaz d'electrons consiste en un gaz bidimensionnel d'electrons sans spin expose perpendiculairement a un champ magnetique uniforme. Ce dernier est decrit par le potentiel vecteur vec{rm A} defini dans la jauge de Dingle ou jauge symetrique. Conformement au formalisme de la seconde quantification, l'hamiltonien de ce gaz est represente dans la base des etats a un-corps de Dingle |n,m> et exprime ainsi en terme des operateurs de creation et d'annihilation correspondants a_sp{ rm n m}{dag} et a _{rm n m}. Nous supposons de plus que les electrons du niveau fondamental de Dingle interagissent entre eux via le potentiel coulombien. La methode utilisee fait appel a une equation mai tresse a N-corps, de nature quantique et statistique, et verifiant le second principe de la thermodynamique. A partir de celle-ci, nous obtenons un systeme d'equations differentielles appele hierarchie d'equations quantique dont la resolution nous permet de determiner une equation a un-corps, dite de Boltzmann quantique, et dictant l'evolution de la moyenne statistique de l'operateur non-diagonal a _sp{rm n m}{dag } a_{rm n}, _{rm m}, sous l'action du champ electrique applique vec{rm E}(t). C'est sa solution Tr(p(t) a _sp{rm n m}{dag} a_{rm n},_ {rm m}), qui definit la relation de convolution entre la densite courant de Hall vec{rm J}_{rm H }(t) et le champ electrique vec {rm E}(t) dont la transformee de Laplace-Fourier du noyau nous fournit l'expression de la conductivite de Hall desiree. Pour une valeur de

Effect of antiferromagnetic layer thickness on exchange bias, training effect, and magnetotransport properties in ferromagnetic/antiferromagnetic antidot arrays

Energy Technology Data Exchange (ETDEWEB)

Gong, W. J.; Liu, W., E-mail: wliu@imr.ac.cn; Feng, J. N.; Zhang, Z. D. [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China); Kim, D. S.; Choi, C. J. [Functional Materials Division, Korea Institute of Materials Science, 531 Changwon- daero, Changwon 631-831 (Korea, Republic of)

2014-04-07

The effect of antiferromagnetic (AFM) layer on exchange bias (EB), training effect, and magnetotransport properties in ferromagnetic (FM) /AFM nanoscale antidot arrays and sheet films Ag(10 nm)/Co(8 nm)/NiO(t{sub NiO})/Ag(5 nm) at 10 K is studied. The AFM layer thickness dependence of the EB field shows a peak at t{sub NiO} = 2 nm that is explained by using the random field model. The misalignment of magnetic moments in the three-dimensional antidot arrays causes smaller decrease of EB field compared with that in the sheet films for training effect. The anomalous magnetotransport properties, in particular positive magnetoresistance (MR) for antidot arrays but negative MR for sheet films are found. The training effect and magnetotransport properties are strongly affected by the three-dimensional spin-alignment effects in the antidot arrays.

High-efficiency near-infrared enabled planar perovskite solar cells by embedding upconversion nanocrystals.

Science.gov (United States)

Meng, Fan-Li; Wu, Jiao-Jiao; Zhao, Er-Fei; Zheng, Yan-Zhen; Huang, Mei-Lan; Dai, Li-Ming; Tao, Xia; Chen, Jian-Feng

2017-11-30

Integration of the upconversion effect in perovskite solar cells (PSCs) is a facile approach towards extending the spectral absorption from the visible to the near infrared (NIR) range and reducing the non-absorption loss of solar photons. However, the big challenge for practical application of UCNCs in planar PSCs is the poor compatibility between UCNCs and the perovskite precursor. Herein, we have subtly overcome the tough compatibility issue using a ligand-exchange strategy. For the first time, β-NaYF 4 :Yb,Er UCNCs have been embedded in situ into a CH 3 NH 3 PbI 3 layer to fabricate NIR-enabled planar PSCs. The CH 3 NH 3 I-capped UCNCs generated from the ligand-exchange were mixed with the perovskite precursor and served as nucleation sites for the UCNC-mediated heteroepitaxial growth of perovskite; moreover, the in situ embedding of UCNCs into the perovskite layer was realized during a spin-coating process. The resulting UCNC-embedded perovskite layer attained a uniform pinhole-free morphology with enlarged crystal grains and enabled NIR absorption. It also contributed to the energy transfer from the UCNCs to the perovskite and electron transport to the collecting electrode surface. The device fabricated using the UCNC-embedded perovskite film achieved an average power-conversion efficiency of 18.60% (19.70% for the best) under AM 1.5G and 0.37% under 980 nm laser, corresponding to 54% and 740-fold increase as compared to that of its counterpart without UCNCs.

Modeling the planar configuration of extraordinary magnetoresistance

International Nuclear Information System (INIS)

El-Ahmar, S; Pozniak, A A

2015-01-01

Recently the planar version of the extraordinary magnetoresistance (EMR) magnetic field sensor has been constructed and verified in practice. Planar configuration of the EMR device gives many technological advantages, it is simpler than the classic and allows one to build the sensor using electric materials of the new type (such as graphene or topological insulators) much easier. In this work the planar configuration of the EMR sensor is investigated by performing computational simulations using the finite element method (FEM). The computational comparison of the planar and classic configurations of EMR is presented using three-dimensional models. Various variants of the geometry of EMR sensor components are pondered and compared in the planar and classic version. Size of the metal overlap is considered for sensor optimization as well as various semiconductor-metal contact resistance dependences of the EMR signal. Based on computational simulations, a method for optimal placement of electric terminals in a planar EMR device is proposed. (paper)

Higher fractions theory of fractional hall effect

International Nuclear Information System (INIS)

Kostadinov, I.Z.; Popov, V.N.

1985-07-01

A theory of fractional quantum Hall effect is generalized to higher fractions. N-particle model interaction is used and the gap is expressed through n-particles wave function. The excitation spectrum in general and the mean field critical behaviour are determined. The Hall conductivity is calculated from first principles. (author)

Contracting a planar graph efficiently

DEFF Research Database (Denmark)

Holm, Jacob; Italiano, Giuseppe F.; Karczmarz, Adam

2017-01-01

the data structure, we can achieve optimal running times for decremental bridge detection, 2-edge connectivity, maximal 3-edge connected components, and the problem of finding a unique perfect matching for a static planar graph. Furthermore, we improve the running times of algorithms for several planar...

Experimental test of 200 W Hall thruster with titanium wall

Science.gov (United States)

Ding, Yongjie; Sun, Hezhi; Peng, Wuji; Xu, Yu; Wei, Liqiu; Li, Hong; Li, Peng; Su, Hongbo; Yu, Daren

2017-05-01

We designed a 200 W Hall thruster based on the technology of pushing down a magnetic field with two permanent magnetic rings. Boron nitride (BN) is an important insulating wall material for Hall thrusters. The discharge characteristics of the designed Hall thruster were studied by replacing BN with titanium (Ti). Experimental results show that the designed Hall thruster can discharge stably for a long time under a Ti channel. Experiments were performed to determine whether the channel and cathode are electrically connected. When the channel wall and cathode are insulated, the divergence angle of the plume increases, but the performance of the Hall thruster is improved in terms of thrust, specific impulse, anode efficiency, and thrust-to-power ratio. Ti exhibits a powerful antisputtering capability, a low emanation rate of gas, and a large structural strength, making it a potential candidate wall material in the design of low-power Hall thrusters.

Inkjet-based adaptive planarization (Conference Presentation)

Science.gov (United States)

Singhal, Shrawan; Grigas, Michelle M.; Khusnatdinov, Niyaz; Sreenivasan, Srinivasan V.

2017-03-01

Planarization is a critical unit step in the lithography process because it enables patterning of surfaces with versatile pattern density without compromising on the stringent planarity and depth-of-focus requirements. In addition to nanoscale pattern density variation, parasitics such as pre-existing wafer topography, can corrupt the desired process output after planarization. The topography of any surface can be classified in three broad categories, depending upon the amplitude and spatial wavelength of the same [1], [2]: (i) nominal shape, (ii) nanotopography and (iii) roughness. The nominal shape is given by the largest spatial wavelengths, typically back is one technique used for micron scale device manufacturing [3]. As the name implies, a glass dielectric is spin-coated on the substrate followed by etching in a chemistry that ensures equal etching rates for both the sacrificial glass and the underlying film or substrate material. Photoresists may also be used instead of glass. However, the global planarity that can be achieved by this technique is limited. Also, planarization over a large isolated topographical feature has been studied for the reverse-tone Jet-and-Flash Imprint Lithography process, also known as JFIL-R [4]. This relies on surface tension and capillary effects to smoothen a spin-coated Si containing film that can be etched to obtain a smooth profile. To meet the stringent requirement of planarity in submicron device technologies Chemical Mechanical Planarization (CMP) is the most widely used planarization technology [5], [6]. It uses a combination of abrasive laden chemical slurry and a mechanical pad for achieving planar profiles. The biggest concern with CMP is the dependence of material removal rate on the pattern density of material, leading to the formation of a step between the high density and low-density. The step shows up as a long-range thickness variation in the planarized film, similar in scale to pre-existing substrate topography

Composite fermions in the quantum Hall effect

International Nuclear Information System (INIS)

Johnson, B.L.; Kirczenow, G.

1997-01-01

The quantum Hall effect and associated quantum transport phenomena in low-dimensional systems have been the focus of much attention for more than a decade. Recent theoretical development of interesting quasiparticles - 'composite fermions' - has led to significant advances in understanding and predicting the behaviour of two-dimensional electron systems under high transverse magnetic fields. Composite fermions may be viewed as fermions carrying attached (fictitious) magnetic flux. Here we review models of the integer and fractional quantum Hall effects, including the development of a unified picture of the integer and fractional effects based upon composite fermions. The composite fermion picture predicts remarkable new physics: the formation of a Fermi surface at high magnetic fields, and anomalous ballistic transport, thermopower, and surface acoustic wave behaviour. The specific theoretical predictions of the model, as well as the body of experimental evidence for these phenomena are reviewed. We also review recent edge-state models for magnetotransport in low-dimensional devices based on the composite fermion picture. These models explain the fractional quantum Hall effect and transport phenomena in nanoscale devices in a unified framework that also includes edge state models of the integer quantum Hall effect. The features of the composite fermion edge-state model are compared and contrasted with those of other recent edge-state models of the fractional quantum Hall effect. (author)

Magnetic Measurements of the Background Field in the Undulator Hall

International Nuclear Information System (INIS)

Fisher, Andrew

2010-01-01

The steel present in the construction of the undulator hall facility has the potential for changing the ambient fields present in the undulator hall. This note describes a measurement done to make a comparison between the fields in the hall and in the Magnetic Measurement Facility. In order for the undulators to have the proper tuning, the background magnetic field in the Undulator Hall should agree with the background field in the Magnetic Measurements Facility within .5 gauss. In order to verify that this was the case measurements were taken along the length of the undulator hall, and the point measurements were compared to the mean field which was measured on the MMF test bench.

Effects of facility backpressure on the performance and plume of a Hall thruster

Science.gov (United States)

Walker, Mitchell Louis Ronald

2005-07-01

This dissertation presents research aimed at understanding the relationship between facility background pressure, Hall thruster performance, and plume characteristics. Due to the wide range of facilities used in Hall thruster testing, it is difficult for researchers to make adequate comparisons between data sets because of both dissimilar instrumentation and backpressures. The differences in the data sets are due to the ingestion of background gas into the Hall thruster discharge channel and charge-exchange collisions in the plume. Thus, this research aims to understand facility effects and to develop the tools needed to allow researchers to obtain relevant plume and performance data for a variety of chambers and backpressures. The first portion of this work develops a technique for calibrating a vacuum chamber in terms of pressure to account for elevated backpressures while testing Hall thrusters. Neutral gas background pressure maps of the Large Vacuum Test Facility are created at a series of cold anode flow rates and one hot flow rate at two UM/AFRL P5 5 kW Hall thruster operating conditions. These data show that a cold flow pressure map can be used to approximate the neutral background pressure in the chamber with the thruster in operation. In addition, the data are used to calibrate a numerical model that accurately predicts facility backpressure within a vacuum chamber of specified geometry and pumping speed. The second portion of this work investigates how facility backpressure influences the plume, plume diagnostics, and performance of the P5 Hall thruster. Measurements of the plume and performance characteristics over a wide range of pressures show that ingestion, a decrease in the downstream plasma potential, and broadening of the ion energy distribution function cause the increase in thrust with backpressure. Furthermore, a magnetically-filtered Faraday probe accurately measures ion current density at elevated operating pressures. The third portion of

Exchange bias effect in L10-ordered FePt and FeCo-based bilayer structure: effect of increasing applied field

Science.gov (United States)

Singh, Sadhana; Kumar, Dileep; Bhagat, Babli; Choudhary, R. J.; Reddy, V. R.; Gupta, Ajay

2018-02-01

The applied magnetic field (H APP) dependence of the exchange bias (EB) is studied in an exchange-coupled thin-film bilayer composed of a hard ferromagnetic FePt layer in the proximity of a soft ferromagnetic FeCo layer. FePt/FeCo structure is deposited in an ultra-high vacuum chamber, where the FePt layer was first annealed at 823 K for 30 min and subsequently cooled to room temperature in the presence of an in-plane magnetic field, H MAX ~ 1.5 kOe to promote L10-ordered hard magnetic phase with magnetic moments aligned in one of the in-plane directions in the FePt layer. In-situ magneto-optical Kerr effect measurements during different stages of bilayer growth and detailed ex-situ superconducting quantum interference device-vibrating sample magnetometer measurements jointly revealed that due to the interplay between exchange coupling at the interface and dipolar energies of the saturated hard FePt layer, a hysteresis loop of FeCo layer shifts along the magnetic field axis. A clear dependence of EB field (H EB) on increasing maximum value of the H APP during the hysteresis loop measurement is understood in terms of the magnetic state of soft and hard magnetic layers, where EB increases with increasing H APP until the hard layer moment remains undisturbed in its remanence state. As soon as the field was sufficient to rotate the spins of the FePt layer, the loop became symmetric with respect to the field axis.

Influence of time dependent longitudinal magnetic fields on the cooling process, exchange bias and magnetization reversal mechanism in FM core/AFM shell nanoparticles: a Monte Carlo study.

Science.gov (United States)

Yüksel, Yusuf; Akıncı, Ümit

2016-12-07

Using Monte Carlo simulations, we have investigated the dynamic phase transition properties of magnetic nanoparticles with ferromagnetic core coated by an antiferromagnetic shell structure. Effects of field amplitude and frequency on the thermal dependence of magnetizations, magnetization reversal mechanisms during hysteresis cycles, as well as on the exchange bias and coercive fields have been examined, and the feasibility of applying dynamic magnetic fields on the particle have been discussed for technological and biomedical purposes.

MCM Polarimetric Radiometers for Planar Arrays

Science.gov (United States)

Kangaslahti, Pekka; Dawson, Douglas; Gaier, Todd

2007-01-01

A polarimetric radiometer that operates at a frequency of 40 GHz has been designed and built as a prototype of multiple identical units that could be arranged in a planar array for scientific measurements. Such an array is planned for use in studying the cosmic microwave background (CMB). All of the subsystems and components of this polarimetric radiometer are integrated into a single multi-chip module (MCM) of substantially planar geometry. In comparison with traditional designs of polarimetric radiometers, the MCM design is expected to greatly reduce the cost per unit in an array of many such units. The design of the unit is dictated partly by a requirement, in the planned CMB application, to measure the Stokes parameters I, Q, and U of the CMB radiation with high sensitivity. (A complete definition of the Stokes parameters would exceed the scope of this article. In necessarily oversimplified terms, I is a measure of total intensity of radiation, while Q and U are measures of the relationships between the horizontally and vertically polarized components of radiation.) Because the sensitivity of a single polarimeter cannot be increased significantly, the only way to satisfy the high-sensitivity requirement is to make a large array of polarimeters that operate in parallel. The MCM includes contact pins that can be plugged into receptacles on a standard printed-circuit board (PCB). All of the required microwave functionality is implemented within the MCM; any required supporting non-microwave ("back-end") electronic functionality, including the provision of DC bias and control signals, can be implemented by standard PCB techniques. On the way from a microwave antenna to the MCM, the incoming microwave signal passes through an orthomode transducer (OMT), which splits the radiation into an h + i(nu) beam and an h - i(nu) beam (where, using complex-number notation, h denotes the horizontal component, nu denotes the vertical component, and +/-i denotes a +/-90deg phase

Magnesium Hall Thruster

Science.gov (United States)

Szabo, James J.

2015-01-01

This Phase II project is developing a magnesium (Mg) Hall effect thruster system that would open the door for in situ resource utilization (ISRU)-based solar system exploration. Magnesium is light and easy to ionize. For a Mars- Earth transfer, the propellant mass savings with respect to a xenon Hall effect thruster (HET) system are enormous. Magnesium also can be combusted in a rocket with carbon dioxide (CO2) or water (H2O), enabling a multimode propulsion system with propellant sharing and ISRU. In the near term, CO2 and H2O would be collected in situ on Mars or the moon. In the far term, Mg itself would be collected from Martian and lunar regolith. In Phase I, an integrated, medium-power (1- to 3-kW) Mg HET system was developed and tested. Controlled, steady operation at constant voltage and power was demonstrated. Preliminary measurements indicate a specific impulse (Isp) greater than 4,000 s was achieved at a discharge potential of 400 V. The feasibility of delivering fluidized Mg powder to a medium- or high-power thruster also was demonstrated. Phase II of the project evaluated the performance of an integrated, highpower Mg Hall thruster system in a relevant space environment. Researchers improved the medium power thruster system and characterized it in detail. Researchers also designed and built a high-power (8- to 20-kW) Mg HET. A fluidized powder feed system supporting the high-power thruster was built and delivered to Busek Company, Inc.

Nanjing’s Cultural Exchanges with Foreign Countries

Institute of Scientific and Technical Information of China (English)

1996-01-01

AS an ancient capital city,Nanj-ing has a long history of cul-tural exchanges with foreigncountries.The ruler of the Kingdom ofEastern Wu(222-280 A.D.)sent en-voys to over 100 states in Hainan andSoutheast Asian islands.Some of thestates paid return visits.For instance,in243 the ruler of Funan(present-dayCambodia)sent a musical group to theEastern Wu King,who then built aFunan Music Hall for court maids tolearn Funan music and dances.Dur-ing the Southem Dynasties(420-589A.D.)exchanges with foreign countriesincreased and Funan sent envoysto Jianye and Jiankang(present-dayNanjing)over 30 times.Ancient SriLanka,which was known as the LionState in ancient China,Tianzhu(an-cient India).Persia,the Korean Penin-

Quasi-particle properties from tunneling in the v = 5/2 fractional quantum Hall state.

Science.gov (United States)

Radu, Iuliana P; Miller, J B; Marcus, C M; Kastner, M A; Pfeiffer, L N; West, K W

2008-05-16

Quasi-particles with fractional charge and statistics, as well as modified Coulomb interactions, exist in a two-dimensional electron system in the fractional quantum Hall (FQH) regime. Theoretical models of the FQH state at filling fraction v = 5/2 make the further prediction that the wave function can encode the interchange of two quasi-particles, making this state relevant for topological quantum computing. We show that bias-dependent tunneling across a narrow constriction at v = 5/2 exhibits temperature scaling and, from fits to the theoretical scaling form, extract values for the effective charge and the interaction parameter of the quasi-particles. Ranges of values obtained are consistent with those predicted by certain models of the 5/2 state.

Distinguishing between deep trapping transients of electrons and holes in TiO2 nanotube arrays using planar microwave resonator sensor.

Science.gov (United States)

Zarifi, Mohammad H; Wiltshire, Benjamin Daniel; Mahdi, Najia; Shankar, Karthik; Daneshmand, Mojgan

2018-05-16

A large signal DC bias and a small signal microwave bias were simultaneously applied to TiO2 nanotube membranes mounted on a planar microwave resonator. The DC bias modulated the electron concentration in the TiO2 nanotubes, and was varied between 0 and 120 V in this study. Transients immediately following the application and removal of DC bias were measured by monitoring the S-parameters of the resonator as a function of time. The DC bias stimulated Poole-Frenkel type trap-mediated electrical injection of excess carriers into TiO2 nanotubes which resulted in a near constant resonant frequency but a pronounced decrease in the microwave amplitude due to free electron absorption. When ultraviolet illumination and DC bias were both present and then step-wise removed, the resonant frequency shifted due to trapping -mediated change in the dielectric constant of the nanotube membranes. Characteristic lifetimes of 60-80 s, 300-800 s and ~3000 s were present regardless of whether light or bias was applied and are also observed in the presence of a hole scavenger, which we attribute to oxygen adsorption and deep electron traps while another characteristic lifetime > 9000 s was only present when illumination was applied, and is attributed to the presence of hole traps.

Trends in preference, programming and design of concert halls for symphonic music

DEFF Research Database (Denmark)

Gade, Anders Christian

2008-01-01

This paper discusses the evolution in taste regarding concert hall acoustics and how this can be reflected in the new halls being built today. The clients' and listener's preferences are not only based on listening in existing halls; but also on listening to reproduced music recorded with microph......This paper discusses the evolution in taste regarding concert hall acoustics and how this can be reflected in the new halls being built today. The clients' and listener's preferences are not only based on listening in existing halls; but also on listening to reproduced music recorded...

Modelling of radial electric fields and currents during divertor plate biasing on TdeV

International Nuclear Information System (INIS)

Lachambre, J.L.; Quirion, B.; Boucher, C.

1994-01-01

A simple model based on non-ambipolar radial transport and planar sheath physics is used to describe the generation of radial electric fields and currents in the scrape-off layer of the Tokamak de Varennes (TdeV) during divertor plate biasing. In general, the calculated predictions compare favourably with TdeV results over a variety of plasma conditions and divertor magnetic configurations. Validated by the experiment, the model is used to study the scaling laws of perpendicular ion mobility and to test existing related theories. Finally, the model is proposed as a useful tool for the design and upgrade of biased divertors through optimization of the plate and throat geometry. (author). 35 refs, 16 figs, 1 tab

Magnetically filtered Faraday probe for measuring the ion current density profile of a Hall thruster

International Nuclear Information System (INIS)

Rovey, Joshua L.; Walker, Mitchell L.R.; Gallimore, Alec D.; Peterson, Peter Y.

2006-01-01

The ability of a magnetically filtered Faraday probe (MFFP) to obtain the ion current density profile of a Hall thruster is investigated. The MFFP is designed to eliminate the collection of low-energy, charge-exchange (CEX) ions by using a variable magnetic field as an ion filter. In this study, a MFFP, Faraday probe with a reduced acceptance angle (BFP), and nude Faraday probe are used to measure the ion current density profile of a 5 kW Hall thruster operating over the range of 300-500 V and 5-10 mg/s. The probes are evaluated on a xenon propellant Hall thruster in the University of Michigan Large Vacuum Test Facility at operating pressures within the range of 4.4x10 -4 Pa Xe (3.3x10 -6 Torr Xe) to 1.1x10 -3 Pa Xe (8.4x10 -6 Torr Xe) in order to study the ability of the Faraday probe designs to filter out CEX ions. Detailed examination of the results shows that the nude probe measures a greater ion current density profile than both the MFFP and BFP over the range of angular positions investigated for each operating condition. The differences between the current density profiles obtained by each probe are attributed to the ion filtering systems employed. Analysis of the results shows that the MFFP, operating at a +5 A solenoid current, provides the best agreement with flight-test data and across operating pressures

Hall effect in organic layered conductors

Directory of Open Access Journals (Sweden)

R.A.Hasan

2006-01-01

Full Text Available The Hall effect in organic layered conductors with a multisheeted Fermi surfaces was considered. It is shown that the experimental study of Hall effect and magnetoresistance anisotropy at different orientations of current and a quantizing magnetic field relative to the layers makes it possible to determine the contribution of various charge carriers groups to the conductivity, and to find out the character of Fermi surface anisotropy in the plane of layers.

Shielding consideration for the SSCL experimental halls

International Nuclear Information System (INIS)

Bull, J.; Coyne, J.; Mokhov, N.; Stapleton, G.

1994-03-01

The Superconducting Super Collider which is being designed and built in Waxahachie, Texas consists Of series of proton accelerators, culminating in a 20 Te proton on proton collider. The collider will be in a tunnel which will be 87 km in circumference and. on average about 30 meters underground. The present design calls for two large interaction halls on the east side of the ring. The shielding for these halls is being designed for an interaction rate of 10 9 Hz or 10 16 interactions per year, based on 10 7 seconds per operational year. SSC guidelines require that the shielding be designed to meet the criterion of 1mSv per year for open areas off site 2mSv per year for open areas on site, and 2mSv per year for controlled areas. Only radiation workers will be routinely allowed to work in controlled areas. It should be pointed that there is a potential for an accidental full beam loss in either of the experimental halls, and this event would consist of the loss of the full circulating beam up to 4 x 10 14 protons. With the present design. the calculated dose equivalent for this event is about 10% of the annual dose equivalent for the normal p-p interactions, so that die accident condition does not control the shielding. If, for instance, local shielding within the experimental hall is introduced into the calculations, this could change. The shielding requirements presented here are controlled by the normal p-p interactions. Three important questions were addressed in the present calculations. They are (1) the thickness of the roof over the experimental halls, (2) the configuration of the shafts and adits which give access to the halls, and (3) the problem of ground water and air activation

Piecewise planar Möbius bands

DEFF Research Database (Denmark)

Gravesen, Jens

2005-01-01

t is shown that a closed polygon with an odd number of vertices is the median of exactly one piecewise planar cylinder and one piecewise planar Möbius band, intersecting each other orthogonally. A closed polygon with an even number of vertices is in the generic case neither the median...

Precision of single-engage micro Hall effect measurements

DEFF Research Database (Denmark)

Henrichsen, Henrik Hartmann; Hansen, Ole; Kjær, Daniel

2014-01-01

Recently a novel microscale Hall effect measurement technique has been developed to extract sheet resistance (RS), Hall sheet carrier density (NHS) and Hall mobility (μH) from collinear micro 4-point probe measurements in the vicinity of an insulating boundary [1]. The technique measures in less...... than a minute directly the local transport properties, which enables in-line production monitoring on scribe line test pads [2]. To increase measurement speed and reliability, a method in which 4-point measurements are performed using two different electrode pitches has been developed [3......]. In this study we calculate the measurement error on RS, NHS and μH resulting from electrode position errors, probe placement, sample size and Hall signal magnitude. We show the relationship between measurement precision and electrode pitch, which is important when down-scaling the micro 4-point probe to fit...

Localization in a quantum spin Hall system.

Science.gov (United States)

Onoda, Masaru; Avishai, Yshai; Nagaosa, Naoto

2007-02-16

The localization problem of electronic states in a two-dimensional quantum spin Hall system (that is, a symplectic ensemble with topological term) is studied by the transfer matrix method. The phase diagram in the plane of energy and disorder strength is exposed, and demonstrates "levitation" and "pair annihilation" of the domains of extended states analogous to that of the integer quantum Hall system. The critical exponent nu for the divergence of the localization length is estimated as nu congruent with 1.6, which is distinct from both exponents pertaining to the conventional symplectic and the unitary quantum Hall systems. Our analysis strongly suggests a different universality class related to the topology of the pertinent system.

Improved Dynamic Planar Point Location

DEFF Research Database (Denmark)

Brodal, Gerth Stølting; Arge, Lars; Georgiadis, Loukas

2006-01-01

We develop the first linear-space data structures for dynamic planar point location in general subdivisions that achieve logarithmic query time and poly-logarithmic update time.......We develop the first linear-space data structures for dynamic planar point location in general subdivisions that achieve logarithmic query time and poly-logarithmic update time....

Planar impact experiments for EOS measurements

International Nuclear Information System (INIS)

Furnish, M.D.

1993-01-01

The community concerned with the numerical modeling of groundshock produced by underground nuclear tests must have access to materials data to benchmark models of rock behavior. Historically the primary source of these data has been planar impact experiments. These experiments have involved gun, explosive and electrical launchers. Other methods of introducing planar shocks include shock driving by in-contact explosives or laser bursts. This paper briefly describes gun launcher-based planar impact methods used to characterize geological materials at Sandia National Laboratories

Observation of the anomalous Hall effect in GaAs

International Nuclear Information System (INIS)

Miah, M Idrish

2007-01-01

Devices for the direct detection of the spin current, based on the anomalous Hall effect (AHE), are fabricated on n-type GaAs bulk semiconductor materials. The AHE is observed in the device when the photoinduced spin-polarized electrons are injected into it, and it is found that the effect depends on the applied electric field. The origin of the field-dependent observed Hall effect is discussed based on the D'yakonov-Perel' (DP) spin relaxation mechanism. The spin-dependent Hall effect is also found to be enhanced with increasing doping concentration. The present experimental results might have potential applications in semiconductor spintronic devices since the effect is closely related to the spin Hall effect

Observation of the anomalous Hall effect in GaAs

Energy Technology Data Exchange (ETDEWEB)

Miah, M Idrish [Nanoscale Science and Technology Centre, School of Science, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong, Chittagong - 4331 (Bangladesh)

2007-03-21

Devices for the direct detection of the spin current, based on the anomalous Hall effect (AHE), are fabricated on n-type GaAs bulk semiconductor materials. The AHE is observed in the device when the photoinduced spin-polarized electrons are injected into it, and it is found that the effect depends on the applied electric field. The origin of the field-dependent observed Hall effect is discussed based on the D'yakonov-Perel' (DP) spin relaxation mechanism. The spin-dependent Hall effect is also found to be enhanced with increasing doping concentration. The present experimental results might have potential applications in semiconductor spintronic devices since the effect is closely related to the spin Hall effect.

A holographic model for the fractional quantum Hall effect

Energy Technology Data Exchange (ETDEWEB)

Lippert, Matthew [Institute for Theoretical Physics, University of Amsterdam,Science Park 904, 1090GL Amsterdam (Netherlands); Meyer, René [Kavli Institute for the Physics and Mathematics of the Universe (WPI), The University of Tokyo,Kashiwa, Chiba 277-8568 (Japan); Taliotis, Anastasios [Theoretische Natuurkunde, Vrije Universiteit Brussel andThe International Solvay Institutes,Pleinlaan 2, B-1050 Brussels (Belgium)

2015-01-08

Experimental data for fractional quantum Hall systems can to a large extent be explained by assuming the existence of a Γ{sub 0}(2) modular symmetry group commuting with the renormalization group flow and hence mapping different phases of two-dimensional electron gases into each other. Based on this insight, we construct a phenomenological holographic model which captures many features of the fractional quantum Hall effect. Using an SL(2,ℤ)-invariant Einstein-Maxwell-axio-dilaton theory capturing the important modular transformation properties of quantum Hall physics, we find dyonic diatonic black hole solutions which are gapped and have a Hall conductivity equal to the filling fraction, as expected for quantum Hall states. We also provide several technical results on the general behavior of the gauge field fluctuations around these dyonic dilatonic black hole solutions: we specify a sufficient criterion for IR normalizability of the fluctuations, demonstrate the preservation of the gap under the SL(2,ℤ) action, and prove that the singularity of the fluctuation problem in the presence of a magnetic field is an accessory singularity. We finish with a preliminary investigation of the possible IR scaling solutions of our model and some speculations on how they could be important for the observed universality of quantum Hall transitions.

A holographic model for the fractional quantum Hall effect

Science.gov (United States)

Lippert, Matthew; Meyer, René; Taliotis, Anastasios

2015-01-01

Experimental data for fractional quantum Hall systems can to a large extent be explained by assuming the existence of a Γ0(2) modular symmetry group commuting with the renormalization group flow and hence mapping different phases of two-dimensional electron gases into each other. Based on this insight, we construct a phenomenological holographic model which captures many features of the fractional quantum Hall effect. Using an -invariant Einstein-Maxwell-axio-dilaton theory capturing the important modular transformation properties of quantum Hall physics, we find dyonic diatonic black hole solutions which are gapped and have a Hall conductivity equal to the filling fraction, as expected for quantum Hall states. We also provide several technical results on the general behavior of the gauge field fluctuations around these dyonic dilatonic black hole solutions: we specify a sufficient criterion for IR normalizability of the fluctuations, demonstrate the preservation of the gap under the action, and prove that the singularity of the fluctuation problem in the presence of a magnetic field is an accessory singularity. We finish with a preliminary investigation of the possible IR scaling solutions of our model and some speculations on how they could be important for the observed universality of quantum Hall transitions.

Hall-Effect Thruster Simulations with 2-D Electron Transport and Hydrodynamic Ions

Science.gov (United States)

Mikellides, Ioannis G.; Katz, Ira; Hofer, Richard H.; Goebel, Dan M.

2009-01-01

A computational approach that has been used extensively in the last two decades for Hall thruster simulations is to solve a diffusion equation and energy conservation law for the electrons in a direction that is perpendicular to the magnetic field, and use discrete-particle methods for the heavy species. This "hybrid" approach has allowed for the capture of bulk plasma phenomena inside these thrusters within reasonable computational times. Regions of the thruster with complex magnetic field arrangements (such as those near eroded walls and magnets) and/or reduced Hall parameter (such as those near the anode and the cathode plume) challenge the validity of the quasi-one-dimensional assumption for the electrons. This paper reports on the development of a computer code that solves numerically the 2-D axisymmetric vector form of Ohm's law, with no assumptions regarding the rate of electron transport in the parallel and perpendicular directions. The numerical challenges related to the large disparity of the transport coefficients in the two directions are met by solving the equations in a computational mesh that is aligned with the magnetic field. The fully-2D approach allows for a large physical domain that extends more than five times the thruster channel length in the axial direction, and encompasses the cathode boundary. Ions are treated as an isothermal, cold (relative to the electrons) fluid, accounting for charge-exchange and multiple-ionization collisions in the momentum equations. A first series of simulations of two Hall thrusters, namely the BPT-4000 and a 6-kW laboratory thruster, quantifies the significance of ion diffusion in the anode region and the importance of the extended physical domain on studies related to the impact of the transport coefficients on the electron flow field.

Quantum Hall Ferroelectrics and Nematics in Multivalley Systems

Science.gov (United States)

Sodemann, Inti; Zhu, Zheng; Fu, Liang

2017-10-01

We study broken symmetry states at integer Landau-level fillings in multivalley quantum Hall systems whose low-energy dispersions are anisotropic. When the Fermi surface of individual pockets lacks twofold rotational symmetry, like in bismuth (111) [Feldman et al. , Observation of a Nematic Quantum Hall Liquid on the Surface of Bismuth, Science 354, 316 (2016), 10.1126/science.aag1715] and in Sn1 -xPbxSe (001) [Dziawa et al., Topological Crystalline Insulator States in Pb1 -xSnxSe , Nat. Mater. 11, 1023 (2012), 10.1038/nmat3449] surfaces, interactions tend to drive the formation of quantum Hall ferroelectric states. We demonstrate that the dipole moment in these states has an intimate relation to the Fermi surface geometry of the parent metal. In quantum Hall nematic states, like those arising in AlAs quantum wells, we demonstrate the existence of unusually robust Skyrmion quasiparticles.

Contact planarization of ensemble nanowires

Science.gov (United States)

Chia, A. C. E.; LaPierre, R. R.

2011-06-01

The viability of four organic polymers (S1808, SC200, SU8 and Cyclotene) as filling materials to achieve planarization of ensemble nanowire arrays is reported. Analysis of the porosity, surface roughness and thermal stability of each filling material was performed. Sonication was used as an effective method to remove the tops of the nanowires (NWs) to achieve complete planarization. Ensemble nanowire devices were fully fabricated and I-V measurements confirmed that Cyclotene effectively planarizes the NWs while still serving the role as an insulating layer between the top and bottom contacts. These processes and analysis can be easily implemented into future characterization and fabrication of ensemble NWs for optoelectronic device applications.

A Novel Hall Effect Sensor Using Elaborate Offset Cancellation Method

Directory of Open Access Journals (Sweden)

Vlassis N. Petoussis

2009-01-01

Full Text Available The Hall effect is caused by a traverse force that is formed in the electrons or holes of metal element or semiconductor when are polarized by current source and simultaneously all the system it is found vertical in external magnetic field. Result is finally the production of difference of potential (Hall voltage in address vertical in that of current and magnetic field directions. In the present work is presented a new Hall sensor exploiting the former operation. In combination with his pioneering form and using dynamic spinning current technique with an elaborate sequence, it leads to satisfactory results of produced Hall voltage with small noise in a presence of external magnetic field. Anyone can see both the spinning current and anti-Hall technique in the same sensor simultaneously.

Quality control on planar n-in-n pixel sensors — Recent progress of ATLAS planar pixel sensors

International Nuclear Information System (INIS)

Klingenberg, R.

2013-01-01

To extend the physics reach of the Large Hadron Collider (LHC), upgrades to the accelerator are planned which will increase the peak luminosity by a factor 5–10. To cope with the increased occupancy and radiation damage, the ATLAS experiment plans to introduce an all-silicon inner tracker with the high luminosity upgrade (HL-LHC). To investigate the suitability of pixel sensors using the proven planar technology for the upgraded tracker, the ATLAS Upgrade Planar Pixel Sensor (PPS) R and D Project was established. Main areas of research are the performance of planar pixel sensors at highest fluences, the exploration of possibilities for cost reduction to enable the instrumentation of large areas, the achievement of slim or active edges to provide low geometric inefficiencies without the need for shingling of modules and the investigation of the operation of highly irradiated sensors at low thresholds to increase the efficiency. The Insertable b-layer (IBL) is the first upgrade project within the ATLAS experiment and will employ a new detector layer consisting of silicon pixel sensors, which were improved and prototyped in the framework of the planar pixel sensor R and D project. A special focus of this paper is the status of the development and testing of planar n-in-n pixel sensors including the quality control of the on-going series production and postprocessing of sensor wafers. A high yield of produced planar sensor wafers and FE-I4 double chip sensors after first steps of post-processing including under bump metallization and dicing is observed. -- Highlights: ► Prototypes of irradiated planar n-in-n sensors have been successfully tested under laboratory conditions. ► A quality assurance programme on the series production of planar sensors for the IBL has started. ► A high yield of double chip sensors during the series production is observed which are compatible to the specifications to this detector component.

Digital technology impacts on the Arnhem transfer hall structural design

NARCIS (Netherlands)

Van de Straat, R.; Hofman, S.; Coenders, J.L.; Paul, J.C.

2015-01-01

The new Transfer Hall in Arnhem is one of the key projects to prepare the Dutch railways for the increased future demands for capacity. UNStudio developed a master plan in 1996 for the station area of which the completion of the Transfer Hall in 2015 will be a final milestone. The Transfer Hall is a

Effects of imaging gradients in sequences with varying longitudinal storage time-Case of diffusion exchange imaging.

Science.gov (United States)

Lasič, Samo; Lundell, Henrik; Topgaard, Daniel; Dyrby, Tim B

2018-04-01

To illustrate the potential bias caused by imaging gradients in correlation MRI sequences using longitudinal magnetization storage (LS) and examine the case of filter exchange imaging (FEXI) yielding maps of the apparent exchange rate (AXR). The effects of imaging gradients in FEXI were observed on yeast cells. To analyze the AXR bias, signal evolution was calculated by applying matrix exponential operators. A sharp threshold for the slice thickness was identified, below which the AXR is increasingly underestimated. The bias can be understood in terms of an extended low-pass diffusion filtering during the LS interval, which is more pronounced at lower exchange rates. For a total exchange rate constant larger than 1 s -1 , the AXR bias is expected to be negligible when slices thicker than 2.5 mm are used. In correlation experiments like FEXI, relying on LS with variable duration, imaging gradients may cause disrupting effects that cannot be easily mitigated and should be carefully considered for unbiased results. In typical clinical applications of FEXI, the imaging gradients are expected to cause a negligible AXR bias. However, the AXR bias may be significant in preclinical settings or whenever thin imaging slices are used. Magn Reson Med 79:2228-2235, 2018. © 2017 International Society for Magnetic Resonance in Medicine. © 2017 International Society for Magnetic Resonance in Medicine.

Searching for long-range dependence in real effective exchange rate: towards parity?

Directory of Open Access Journals (Sweden)

André M. Marques

2015-12-01

Full Text Available Abstract After the widespread adoption of flexible exchange rate regime since 1973 the volatility of the exchange rate has increased, as a consequence of greater trade openness and financial integration. As a result, it has become difficult to find evidence of the purchasing power parity hypothesis (PPP. This study investigates the possibility of a fall in the persistence of the real exchange rate as a consequence of the financial and commercial integration by employing monthly real effective exchange rate dataset provided by the International Monetary Fund (IMF. Beginning with an exploratory data analysis in the frequency domain, the fractional coefficient d was estimated employing the bias-reduced estimator on a sample of 20 countries over the period ranging from 1975 to 2011. As the main novelty, this study applies a bias-reduced log-periodogram regression estimator instead of the traditional method proposed by GPH which eliminates the first and higher orders biases by a data-dependent plug-in method for selecting the number of frequencies to minimize asymptotic mean-squared error (MSE. Additionally, this study also estimates a moving window of fifteen years to observe the path of the fractional coefficient in each country. No evidence was found of a statistically significant change in the persistence of the real exchange rate.

Acoustic investigations of concert halls for rock music

DEFF Research Database (Denmark)

Adelman-Larsen, Niels Werner; Thompson, Eric Robert; Gade, Anders Christian

2007-01-01

Objective measurement data and subjective evaluations have been collected from 20 small-/medium-sized halls in Denmark used for amplified rhythmic music concerts (pop, rock, jazz). The purpose of the study was to obtain knowledge about optimum acoustic conditions for this type of hall. The study...... is motivated by the fact that most concert tickets sold in Denmark relate to concerts within these genres in this kind of venue. The subjective evaluations were carried out by professional musicians and sound engineers who responded on the basis of their experiences working in these (and other) halls. From...

Magnetohydrodynamic simulations of Gamble I POS with Hall effect

International Nuclear Information System (INIS)

Roderick, N.F.; Frese, M.H.; Peterkin, R.E.; Payne, S.S.

1989-01-01

Two dimensional single fluid magnetohydrodynamic simulations have been conducted to investigate the effects of the Hall electric field on magnetic field transport in plasma opening switches of the type used on Gamble I. The Hall terms were included in the magnetic field transport equation in the two dimensional simulation code MACH2 through the use of a generalized Ohm's law. Calculations show the Hall terms augment the field transport previously observed to occur through ion fluid motion and diffusion. For modest values of microturbulent collision frequency, board current channels were observed . Results also show the magnetic field transport to be affected by the cathode boundary conditions with the Hall terms included. In all cases center of mass motion was slight

Reconciling a "pleasant exchange" with evidence of information bias: A three-country study on pharmaceutical sales visits in primary care.

Science.gov (United States)

Reynolds, Ellen; Guénette, Line; Lexchin, Joel; Cassels, Alan; Wilkes, Michael S; Durrieu, Geneviève; Beaulieu, Marie-Dominique; Mintzes, Barbara

2018-03-01

To examine and compare the experiences and attitudes of primary care physicians in three different regulatory environments (United States, Canada, and France) towards interactions with pharmaceutical sales representatives, particularly their perspectives on safety information provision and self-reported influences on prescribing. We recruited primary care physicians for 12 focus groups in Montreal, Sacramento, Toulouse and Vancouver. A thematic analysis of the interview data followed a five-stage framework analysis approach. Fifty-seven family physicians (19 women, 38 men) participated. Physicians expected a commercial bias and generally considered themselves to be immune from influence. They also appreciated the exchange and the information on new drugs. Across all sites, physicians expressed concern about missing harm information; however, attitudes to increased regulation of sales visits in France and the US were generally negative. A common solution to inadequate harm information was to seek further commercially sourced information. Physicians at all sites also expressed sensitivity to critiques from medical students and residents about promotional interactions. Physicians have contradictory views on the inadequate harm information received from sales representatives, linked to their lack of awareness of the drugs' safety profiles. Commonly used strategies to mitigate information bias are unlikely to be effective. Alternate information sources to inform prescribing decisions, and changes in the way that physicians and sales representatives interact are needed. Copyright © 2018 Elsevier B.V. All rights reserved.

Spin Hall effect on a noncommutative space

International Nuclear Information System (INIS)

Ma Kai; Dulat, Sayipjamal

2011-01-01

We study the spin-orbital interaction and the spin Hall effect of an electron moving on a noncommutative space under the influence of a vector potential A(vector sign). On a noncommutative space, we find that the commutator between the vector potential A(vector sign) and the electric potential V 1 (r(vector sign)) of the lattice induces a new term, which can be treated as an effective electric field, and the spin Hall conductivity obtains some correction. On a noncommutative space, the spin current and spin Hall conductivity have distinct values in different directions, and depend explicitly on the noncommutative parameter. Once this spin Hall conductivity in different directions can be measured experimentally with a high level of accuracy, the data can then be used to impose bounds on the value of the space noncommutativity parameter. We have also defined a new parameter, σ=ρθ (ρ is the electron concentration, θ is the noncommutativity parameter), which can be measured experimentally. Our approach is based on the Foldy-Wouthuysen transformation, which gives a general Hamiltonian of a nonrelativistic electron moving on a noncommutative space.

Diagnostics Systems for Permanent Hall Thrusters Development

Science.gov (United States)

Ferreira, Jose Leonardo; Soares Ferreira, Ivan; Santos, Jean; Miranda, Rodrigo; Possa, M. Gabriela

This work describes the development of Permanent Magnet Hall Effect Plasma Thruster (PHALL) and its diagnostic systems at The Plasma Physics Laboratory of University of Brasilia. The project consists on the construction and characterization of plasma propulsion engines based on the Hall Effect. Electric thrusters have been employed in over 220 successful space missions. Two types stand out: the Hall-Effect Thruster (HET) and the Gridded Ion Engine (GIE). The first, which we deal with in this project, has the advantage of greater simplicity of operation, a smaller weight for the propulsion subsystem and a longer shelf life. It can operate in two configurations: magnetic layer and anode layer, the difference between the two lying in the positioning of the anode inside the plasma channel. A Hall-Effect Thruster-HET is a type of plasma thruster in which the propellant gas is ionized and accelerated by a magneto hydrodynamic effect combined with electrostatic ion acceleration. So the essential operating principle of the HET is that it uses a J x B force and an electrostatic potential to accelerate ions up to high speeds. In a HET, the attractive negative charge is provided by electrons at the open end of the Thruster instead of a grid, as in the case of the electrostatic ion thrusters. A strong radial magnetic field is used to hold the electrons in place, with the combination of the magnetic field and the electrostatic potential force generating a fast circulating electron current, the Hall current, around the axis of the Thruster, mainly composed by drifting electrons in an ion plasma background. Only a slow axial drift towards the anode occurs. The main attractive features of the Hall-Effect Thruster are its simple design and operating principles. Most of the Hall-Effect Thrusters use electromagnet coils to produce the main magnetic field responsible for plasma generation and acceleration. In this paper we present a different new concept, a Permanent Magnet Hall

Hole mobilities and the effective Hall factor in p-type GaAs

Science.gov (United States)

Wenzel, M.; Irmer, G.; Monecke, J.; Siegel, W.

1997-06-01

We prove the effective Hall factor in p-GaAs to be larger than values discussed in the literature up to now. The scattering rates for the relevant scattering mechanisms in p-GaAs have been recalculated after critical testing the existing models. These calculations allow to deduce theoretical drift and theoretical Hall mobilities as functions of temperature which can be compared with measured data. Theoretical Hall factors in the heavy and light hole bands and an effective Hall factor result. The calculated room temperature values of the drift mobility and of the effective Hall factor are 118 cm2/V s and 3.6, respectively. The fitted acoustic deformation potential E1=7.9 eV and the fitted optical coupling constant DK=1.24×1011 eV/m are close to values published before. It is shown that the measured strong dependence of the Hall mobility on the Hall concentration is not mainly caused by scattering by ionized impurities but by the dependence of the effective Hall factor on the hole concentration.

Field theory approach to quantum hall effect

International Nuclear Information System (INIS)

Cabo, A.; Chaichian, M.

1990-07-01

The Fradkin's formulation of statistical field theory is applied to the Coulomb interacting electron gas in a magnetic field. The electrons are confined to a plane in normal 3D-space and also interact with the physical 3D-electromagnetic field. The magnetic translation group (MTG) Ward identities are derived. Using them it is shown that the exact electron propagator is diagonalized in the basis of the wave functions of the free electron in a magnetic field whenever the MTG is unbroken. The general tensor structure of the polarization operator is obtained and used to show that the Chern-Simons action always describes the Hall effect properties of the system. A general proof of the Streda formula for the Hall conductivity is presented. It follows that the coefficient of the Chern-Simons terms in the long-wavelength approximation is exactly given by this relation. Such a formula, expressing the Hall conductivity as a simple derivative, in combination with diagonal form of the full propagator allows to obtain a simple expressions for the filling factor and the Hall conductivity. Indeed, these results, after assuming that the chemical potential lies in a gap of the density of states, lead to the conclusion that the Hall conductivity is given without corrections by σ xy = νe 2 /h where ν is the filling factor. In addition it follows that the filling factor is independent of the magnetic field if the chemical potential remains in the gap. (author). 21 ref, 1 fig

Are quantum spin Hall edge modes more resilient to disorder, sample geometry and inelastic scattering than quantum Hall edge modes?

Science.gov (United States)

Mani, Arjun; Benjamin, Colin

2016-04-13

On the surface of 2D topological insulators, 1D quantum spin Hall (QSH) edge modes occur with Dirac-like dispersion. Unlike quantum Hall (QH) edge modes, which occur at high magnetic fields in 2D electron gases, the occurrence of QSH edge modes is due to spin-orbit scattering in the bulk of the material. These QSH edge modes are spin-dependent, and chiral-opposite spins move in opposing directions. Electronic spin has a larger decoherence and relaxation time than charge. In view of this, it is expected that QSH edge modes will be more robust to disorder and inelastic scattering than QH edge modes, which are charge-dependent and spin-unpolarized. However, we notice no such advantage accrues in QSH edge modes when subjected to the same degree of contact disorder and/or inelastic scattering in similar setups as QH edge modes. In fact we observe that QSH edge modes are more susceptible to inelastic scattering and contact disorder than QH edge modes. Furthermore, while a single disordered contact has no effect on QH edge modes, it leads to a finite charge Hall current in the case of QSH edge modes, and thus a vanishing of the pure QSH effect. For more than a single disordered contact while QH states continue to remain immune to disorder, QSH edge modes become more susceptible--the Hall resistance for the QSH effect changes sign with increasing disorder. In the case of many disordered contacts with inelastic scattering included, while quantization of Hall edge modes holds, for QSH edge modes a finite charge Hall current still flows. For QSH edge modes in the inelastic scattering regime we distinguish between two cases: with spin-flip and without spin-flip scattering. Finally, while asymmetry in sample geometry can have a deleterious effect in the QSH case, it has no impact in the QH case.

Are quantum spin Hall edge modes more resilient to disorder, sample geometry and inelastic scattering than quantum Hall edge modes?

International Nuclear Information System (INIS)

Mani, Arjun; Benjamin, Colin

2016-01-01

On the surface of 2D topological insulators, 1D quantum spin Hall (QSH) edge modes occur with Dirac-like dispersion. Unlike quantum Hall (QH) edge modes, which occur at high magnetic fields in 2D electron gases, the occurrence of QSH edge modes is due to spin–orbit scattering in the bulk of the material. These QSH edge modes are spin-dependent, and chiral-opposite spins move in opposing directions. Electronic spin has a larger decoherence and relaxation time than charge. In view of this, it is expected that QSH edge modes will be more robust to disorder and inelastic scattering than QH edge modes, which are charge-dependent and spin-unpolarized. However, we notice no such advantage accrues in QSH edge modes when subjected to the same degree of contact disorder and/or inelastic scattering in similar setups as QH edge modes. In fact we observe that QSH edge modes are more susceptible to inelastic scattering and contact disorder than QH edge modes. Furthermore, while a single disordered contact has no effect on QH edge modes, it leads to a finite charge Hall current in the case of QSH edge modes, and thus a vanishing of the pure QSH effect. For more than a single disordered contact while QH states continue to remain immune to disorder, QSH edge modes become more susceptible—the Hall resistance for the QSH effect changes sign with increasing disorder. In the case of many disordered contacts with inelastic scattering included, while quantization of Hall edge modes holds, for QSH edge modes a finite charge Hall current still flows. For QSH edge modes in the inelastic scattering regime we distinguish between two cases: with spin-flip and without spin-flip scattering. Finally, while asymmetry in sample geometry can have a deleterious effect in the QSH case, it has no impact in the QH case. (paper)

Performance Comparison of Cross-Like Hall Plates with Different Covering Layers

Directory of Open Access Journals (Sweden)

Fei Lyu

2014-12-01

Full Text Available This paper studies the effects of the covering layers on the performance of a cross-like Hall plate. Three different structures of a cross-like Hall plate in various sizes are designed and analyzed. The Hall plate sensitivity and offset are characterized using a self-built measurement system. The effect of the P-type region over the active area on the current-related sensitivity is studied for different Hall plate designs. In addition, the correlation between the P-type covering layer and offset is analyzed. The best structure out of three designs is determined. Besides, a modified eight-resistor circuit model for the Hall plate is presented with improved accuracy by taking the offset into account.

Enhanced Performance of Cylindrical Hall Thrusters

International Nuclear Information System (INIS)

Raitses, Y.; Smirnov, A.; Fisch, N.J.

2007-01-01

The cylindrical thruster differs significantly in its underlying physical mechanisms from the conventional annular Hall thruster. It features high ionization efficiency, quiet operation, ion acceleration in a large volume-to-surface ratio channel, and performance comparable with the state-of-the-art conventional Hall thrusters. Very significant plume narrowing, accompanied by the increase of the energetic ion fraction and improvement of ion focusing, led to 50-60% increase of the thruster anode efficiency. These improvements were achieved by overrunning the discharge current in the magnetized thruster plasma

Theory of fractional quantum Hall effect

International Nuclear Information System (INIS)

Kostadinov, I.Z.

1984-09-01

A theory of the fractional quantum Hall effect is constructed by introducing 3-particle interactions breaking the symmetry for ν=1/3 according to a degeneracy theorem proved here. An order parameter is introduced and a gap in the single particle spectrum is found. The critical temperature, critical filling number and critical behaviour are determined as well as the Ginzburg-Landau equation coefficients. A first principle calculation of the Hall current is given. 3, 5, 7 electron tunneling and Josephson interference effects are predicted. (author)

The Forward-Bias Puzzle: A Solution Based on Covered Interest Parity

OpenAIRE

Pippenger, John

2009-01-01

The forward-bias puzzle is probably the most important puzzle in international macroeconomics. After more than 20 years, there is no accepted solution. My solution is based on covered interest parity (CIP). CIP implies: (1) Forward rates are not rational expectations of future spot rates. Those expectations depend on future spot rates and interest rate differentials. (2) The forward bias is the result of a specification error, replacing future forward exchange rates with current forward ...

Modified planar functions and their components

DEFF Research Database (Denmark)

Anbar Meidl, Nurdagül; Meidl, Wilfried Meidl

2017-01-01

functions in odd characteristic as a vectorial bent function. We finally point out that though these components behave somewhat different than the multivariate bent4 functions, they are bent or semibent functions shifted by a certain quadratic term, a property which they share with their multivariate......Zhou ([20]) introduced modified planar functions in order to describe (2n; 2n; 2n; 1) relative difference sets R as a graph of a function on the finite field F2n, and pointed out that projections of R are difference sets that can be described by negabent or bent4 functions, which are Boolean...... functions given in multivariate form. One of the objectives of this paper is to contribute to the understanding of these component functions of modified planar functions. Moreover, we obtain a description of modified planar functions by their components which is similar to that of the classical planar...

Low-bias flat band-stop filter based on velocity modulated gaussian graphene superlattice

Science.gov (United States)

Sattari-Esfahlan, S. M.; Shojaei, S.

2018-05-01

Transport properties of biased planar Gaussian graphene superlattice (PGGSL) with Fermi velocity barrier is investigated by transfer matrix method (TMM). It is observed that enlargement of bias voltage over miniband width breaks the miniband to WSLs leads to suppressing resonant tunneling. Transmission spectrum shows flat wide stop-band property controllable by external bias voltage with stop-band width of near 200 meV. The simulations demonstrate that strong velocity barriers prevent tunneling of Dirac electrons leading to controllable enhancement of stop-band width. By increasing ratio of Fermi velocity in barriers to wells υc stop-band width increase. As wide transmission stop-band width (BWT) of filter is tunable from 40 meV to 340 meV is obtained by enhancing ratio of υc from 0.2 to 1.5, respectively. Proposed structure suggests easy tunable wide band-stop electronic filter with a modulated flat stop-band characteristic by height of electrostatic barrier and structural parameters. Robust sensitivity of band width to velocity barrier intensity in certain bias voltages and flat band feature of proposed filter may be opens novel venue in GSL based flat band low noise filters and velocity modulation devices.

Signatures of lattice geometry in quantum and topological Hall effect

International Nuclear Information System (INIS)

Göbel, Börge; Mook, Alexander; Mertig, Ingrid; Henk, Jürgen

2017-01-01

The topological Hall effect (THE) of electrons in skyrmion crystals (SkXs) is strongly related to the quantum Hall effect (QHE) on lattices. This relation suggests to revisit the QHE because its Hall conductivity can be unconventionally quantized. It exhibits a jump and changes sign abruptly if the Fermi level crosses a van Hove singularity. In this Paper, we investigate the unconventional QHE features by discussing band structures, Hall conductivities, and topological edge states for square and triangular lattices; their origin are Chern numbers of bands in the SkX (THE) or of the corresponding Landau levels (QHE). Striking features in the energy dependence of the Hall conductivities are traced back to the band structure without magnetic field whose properties are dictated by the lattice geometry. Based on these findings, we derive an approximation that allows us to determine the energy dependence of the topological Hall conductivity on any two-dimensional lattice. The validity of this approximation is proven for the honeycomb lattice. We conclude that SkXs lend themselves for experiments to validate our findings for the THE and—indirectly—the QHE. (paper)

Hall conductance and topological invariant for open systems.

Science.gov (United States)

Shen, H Z; Wang, W; Yi, X X

2014-09-24

The Hall conductivity given by the Kubo formula is a linear response of quantum transverse transport to a weak electric field. It has been intensively studied for quantum systems without decoherence, but it is barely explored for systems subject to decoherence. In this paper, we develop a formulism to deal with this issue for topological insulators. The Hall conductance of a topological insulator coupled to an environment is derived, the derivation is based on a linear response theory developed for open systems in this paper. As an application, the Hall conductance of a two-band topological insulator and a two-dimensional lattice is presented and discussed.

Determination of intrinsic spin Hall angle in Pt

Energy Technology Data Exchange (ETDEWEB)

Wang, Yi; Deorani, Praveen; Qiu, Xuepeng; Kwon, Jae Hyun; Yang, Hyunsoo, E-mail: eleyang@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, 117576 (Singapore)

2014-10-13

The spin Hall angle in Pt is evaluated in Pt/NiFe bilayers by spin torque ferromagnetic resonance measurements and is found to increase with increasing the NiFe thickness. To extract the intrinsic spin Hall angle in Pt by estimating the total spin current injected into NiFe from Pt, the NiFe thickness dependent measurements are performed and the spin diffusion in the NiFe layer is taken into account. The intrinsic spin Hall angle of Pt is determined to be 0.068 at room temperature and is found to be almost constant in the temperature range of 13–300 K.

Determination of intrinsic spin Hall angle in Pt

International Nuclear Information System (INIS)

Wang, Yi; Deorani, Praveen; Qiu, Xuepeng; Kwon, Jae Hyun; Yang, Hyunsoo

2014-01-01

The spin Hall angle in Pt is evaluated in Pt/NiFe bilayers by spin torque ferromagnetic resonance measurements and is found to increase with increasing the NiFe thickness. To extract the intrinsic spin Hall angle in Pt by estimating the total spin current injected into NiFe from Pt, the NiFe thickness dependent measurements are performed and the spin diffusion in the NiFe layer is taken into account. The intrinsic spin Hall angle of Pt is determined to be 0.068 at room temperature and is found to be almost constant in the temperature range of 13–300 K.

Fast surface waves in an ideal Hall-magnetohydrodynamic plasma slab

International Nuclear Information System (INIS)

Zhelyazkov, I.; Debosscher, A.; Goossens, M.

1996-01-01

The propagation of fast sausage and kink magnetohydrodynamic (MHD) surface waves in an ideal magnetized plasma slab is studied taking into account the Hall term in the generalized Ohm close-quote s law. It is found that the Hall effect modifies the dispersion characteristics of MHD surface modes when the Hall term scaling length is not negligible (less than, but comparable to the slab thickness). The dispersion relations for both modes have been derived for parallel propagation (along the ambient equilibrium magnetic field lines).The Hall term imposes some limits on the possible wave number range. It turns out that the space distribution of almost all perturbed quantities in sausage and kink surface waves with Hall effect is rather complicated as compared to that of usual fast MHD surface waves. The applicability to solar wind aspects of the results obtained, is briefly discussed. copyright 1996 American Institute of Physics

Migrants and Their Experiences of Time: Edward T. Hall Revisited

Directory of Open Access Journals (Sweden)

Elisabeth Schilling

2009-01-01

Full Text Available In this paper we reassess the scientific heritage of Edward T. HALL and his contribution to the area of intercultural communication. The key objectives of our study are to demonstrate the applicability of HALL's theory of culture to empirical research and to establish its compatibility with other methods. Specifically, we propose that Alfred SCHÜTZ's phenomenology of sociality be taken as an extension to HALL. The connection between HALL and SCHÜTZ is made possible by the mutual emphases on the temporal dimension of culture and the temporal aspects of migration. With these foci we analyze six narratives by two groups of migrants: German and Russian. By combining HALL's theory of the cultural time with SCHÜTZ's phenomenological perspective on time and the Other and then applying them to empirical data, we show the terms in which different cultures experience time. URN: urn:nbn:de:0114-fqs0901357

Critical current in the Integral Quantum Hall Effect

International Nuclear Information System (INIS)

Kostadinov, I.Z.

1985-11-01

A multiparticle theory of the Integral Quantum Hall Effect (IQHE) was constructed operating with pairs wave function as an order parameter. The IQHE is described with bosonic macroscopic states while the fractional QHE with fermionic ones. The calculation of the critical current and Hall conductivity temperature dependence is presented. (author)

Broadband dye-sensitized upconverting nanocrystals enabled near-infrared planar perovskite solar cells

Science.gov (United States)

Lai, Xuesen; Li, Xitao; Lv, Xinding; Zheng, Yan-Zhen; Meng, Fanli; Tao, Xia

2017-12-01

Extending the spectral absorption of perovskite solar cells (PSCs) from visible into near-infrared (NIR) range is a promising strategy to minimize non-absorption loss of solar photons and enhance the cell photovoltaic performance. Herein, we report on for the first time a viable strategy of incorporating IR806 dye-sensitized upconversion nanocrystals (IR806-UCNCs) into planar PSC for broadband upconversion of NIR light (800-1000 nm) into perovskite absorber-responsive visible emissions. A smart trick is firstly adopted to prepare hydrophilic IR806-UCNCs via a NOBF4 assisted two-step ligand-exchange that allows incorporating with perovskite precursor for in-situ growth of upconverting planar perovskite film. Unlike typically reported upconverting nanoparticles with narrow NIR absorption, the as-prepared IR806-UCNCs are able to harvest NIR light broadly and then transfer the captured energy to the UCNCs for an efficient visible upconversion. The IR806-UCNCs-incorporated cell exhibits a power conversion efficiency of 17.49%, corresponding to 29% increment from that of the pristine cell (13.52%). This strategy provides a feasible way to enable the most efficient harvesting of NIR sunlight for solar cells and other optoelectric devices.

Planar Hall Sensor for Influenza Immunoassay

DEFF Research Database (Denmark)

Ejsing, Louise Wellendorph

2006-01-01

følsomt kan detektere magnetiske nanokugler. Indledende biodetektionsforsøg rettet mod detektion af influenza-virus blev udført i samarbejde med Statens Serum-Institut. Det blev demonstreret, at sensorerne har et stort potentiale til biodetektion men også at den uspecifikke binding af magnetiske kugler...

Orientifold Planar Equivalence: The Chiral Condensate

DEFF Research Database (Denmark)

Armoni, Adi; Lucini, Biagio; Patella, Agostino

2008-01-01

The recently introduced orientifold planar equivalence is a promising tool for solving non-perturbative problems in QCD. One of the predictions of orientifold planar equivalence is that the chiral condensates of a theory with $N_f$ flavours of Dirac fermions in the symmetric (or antisymmetric...

A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics.

Science.gov (United States)

Huang, Haiyun; Wang, Dejun; Xu, Yue

2015-10-27

This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS) technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and low offset. A new spinning current modulator stabilizes the quiescent output voltage and improves the reliability of the signal conditioner. The tested results show that at the 5 V supply voltage, the maximum Hall output voltage of the monolithic Hall sensor microsystem, is up to ±2.1 V and the linearity of Hall output voltage is higher than 99% in the magnetic flux density range from ±5 mT to ±175 mT. The output equivalent residual offset is 0.48 mT and the static power consumption is 20 mW.