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Sample records for evaporated cdse thin

  1. Structural, optical and electrical characterization of vacuum-evaporated nanocrystalline CdSe thin films for photosensor applications

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Vipin; Sharma, D.K.; Sharma, Kapil [Krishna Institute of Engineering and Technology, Department of Physics, Ghaziabad (India); Dwivedi, D.K. [M.M.M University of Technology, Department of Physics, Gorakhpur (India)

    2016-11-15

    II-VI nanocrystalline semiconductors offer a wide range of applications in electronics, optoelectronics and photonics. Thin films of CdSe were deposited onto ultra-clean glass substrates by vacuum evaporation method. The as-deposited films were annealed in vacuum at 350 K. The structural, elemental, morphological, optical and electrical investigations of annealed films were carried out. The X-ray diffraction pattern of the films shows that films were polycrystalline in nature having hexagonal structure with preferential orientation of grains along (002) plane. SEM image indicates that the films were uniform and well covered to the glass substrate. EDAX analysis confirms the stoichiometric composition of the film. Raman spectra were used to observe the characteristic vibrational modes of CdSe. The energy band gap of these films was obtained by absorption spectra. The films were found to have a direct type of transition of band gap occurring at 1.75 eV. The dark electrical conductivity and photoconductivity reveals that the films were semiconducting in nature indicating the suitability of these films for photosensor applications. The Hall effect measurement reveals that the films have n-type electrical conductivity. (orig.)

  2. Mobility activation in thermally deposited CdSe thin films

    Indian Academy of Sciences (India)

    Effect of illumination on mobility has been studied from the photocurrent decay characteristics of thermally evaporated CdSe thin films deposited on suitably cleaned glass substrate held at elevated substrate temperatures. The study indicates that the mobilities of the carriers of different trap levels are activated due to the ...

  3. Photoelectrochemical (PEC) studies on CdSe thin films ...

    Indian Academy of Sciences (India)

    TECS

    Thin films of CdSe were deposited by potentiostatic mode on different substrates such as ... trodeposited from aqueous acidic baths, but very few ... washed with liquid detergent (labolene) followed by ul- .... increases the ionic mobilities and hence the conductivity ... A PEC cell of configuration, CdSe/1 M polysulphide/.

  4. Investigation of the structural, optical and electrical transport properties of n-doped CdSe thin films

    Science.gov (United States)

    Ali, H. M.; Abd El-Ghanny, H. A.

    2008-04-01

    Thin films of (CdSe)90(In2O3)10, (CdSe)90(SnO2)10 and (CdSe)90(ZnO)10 have been grown on glass substrates by the electron beam evaporation technique. It has been found that undoped and Sn or In doped CdSe films have two direct transitions corresponding to the energy gaps Eg and Eg+Δ due to spin-orbit splitting of the valence band. The electrical resistivity for n-doped CdSe thin films as a function of light exposure time has been studied. The influence of doping on the structural, optical and electrical characteristics of In doped CdSe films has been investigated in detail. The lattice parameters, grain size and dislocation were determined from x-ray diffraction patterns. The optical transmittance and band gap of these films were determined using a double beam spectrophotometer. The DC conductivity of the films was measured in vacuum using a two-probe technique.

  5. Study of sub band gap absorption of Sn doped CdSe thin films

    International Nuclear Information System (INIS)

    Kaur, Jagdish; Rani, Mamta; Tripathi, S. K.

    2014-01-01

    The nanocrystalline thin films of Sn doped CdSe at different dopants concentration are prepared by thermal evaporation technique on glass substrate at room temperature. The effect of Sn doping on the optical properties of CdSe has been studied. A decrease in band gap value is observed with increase in Sn concentration. Constant photocurrent method (CPM) is used to study the absorption coefficient in the sub band gap region. Urbach energy has been obtained from CPM spectra which are found to increase with amount of Sn dopants. The refractive index data calculated from transmittance is used for the identification of oscillator strength and oscillator energy using single oscillator model which is found to be 7.7 and 2.12 eV, 6.7 and 2.5 eV for CdSe:Sn 1% and CdSe:Sn 5% respectively

  6. Study of sub band gap absorption of Sn doped CdSe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Jagdish; Rani, Mamta [Department of Physics, Panjab University, Chandigarh- 160014 (India); Tripathi, S. K., E-mail: surya@pu.ac.in [Centre of Advanced Study in Physics, Panjab University, Chandigarh- 160014 (India)

    2014-04-24

    The nanocrystalline thin films of Sn doped CdSe at different dopants concentration are prepared by thermal evaporation technique on glass substrate at room temperature. The effect of Sn doping on the optical properties of CdSe has been studied. A decrease in band gap value is observed with increase in Sn concentration. Constant photocurrent method (CPM) is used to study the absorption coefficient in the sub band gap region. Urbach energy has been obtained from CPM spectra which are found to increase with amount of Sn dopants. The refractive index data calculated from transmittance is used for the identification of oscillator strength and oscillator energy using single oscillator model which is found to be 7.7 and 2.12 eV, 6.7 and 2.5 eV for CdSe:Sn 1% and CdSe:Sn 5% respectively.

  7. Mobility activation in thermally deposited CdSe thin films

    Indian Academy of Sciences (India)

    Administrator

    3. Mobility activation in CdSe thin films. The trap depths were calculated by using the following simple decay law. It = Ioexp(–pt),. (1) where p is the probability of escape of an electron from the trap per second and is given by (Randall and Wilkins 1945) p = S exp (–E/kT),. (2) where E is the trap depth for electrons below the ...

  8. Transparent high-performance CDSE thin-film solar cells

    International Nuclear Information System (INIS)

    Mahawela, P.; Jeedigunta, S.; Vakkalanka, S.; Ferekides, C.S.; Morel, D.L.

    2005-01-01

    Simulations indicate that 25-30% efficiency can be achieved with a four-terminal thin-film tandem structure. The bottom low band gap cell can be CuIn 1-x Ga x Se 2 , and CdSe is proposed as the top cell, as it has an ideal band gap of 1.7 eV. In addition to the efficiency requirements, the top cell must also be transparent to effectively transmit sub band gap light to the bottom cell. We have developed CdSe devices that meet many of the requirements of this tandem structure. High electronic quality CdSe has been deposited on SnO 2 and ZnO, which serve as the transparent n-type contact. The p-type transparent contact is ZnSe/Cu. Voc's of 475 mV have been achieved and can be further improved with better contacts. However, record Jsc's in excess of 17 mA/cm 2 have been achieved. This is close to the target 18 mA/cm 2 to meet the efficiency objectives. Transmission of 80% of the sub band gap radiation has been demonstrated for 2-no. muno. m-thick absorber layers. This is also close to the 85% target to achieve the overall tandem efficiency objectives. Improvement of the contact layers to achieve the Voc target is the final challenge

  9. Composition and performance of thin film CdSe electrodeposited from selenosulfite solution

    International Nuclear Information System (INIS)

    Szabo, J.P.; Simms, D.; Cocivera, M.

    1985-01-01

    Cathodic electrodeposition of thin film CdSe from aqueous selenosulfite solution has been studied as function of solution composition and electrode potential. The Cd/Se ratio has been analyzed using polarography and Rutherford backscattering spectroscopy. Polarography gives a compostion averaged over the whole film (2cm 2 ) while RBS gives local surface composition (1 mm 2 ). The average Cd/Se ratio is 1.1, but some variation was found to occur across the surface of film (0.82 to 1.2)

  10. Electrical and optical properties of spray - deposited CdSe thin films

    International Nuclear Information System (INIS)

    Bedir, M.; Oeztas, M.; Bakkaloglu, O. F.

    2002-01-01

    The CdSe thin films were developed by using spray-deposition technique at different substrate temperatures of 380C, 400C and, 420C on the glass substrate. All spraying processes involved CdCI 2 (0.05 moles/liter) and SeO 2 (0.05 moles/liter ) and were carried out in atmospheric condition. The CdSe thin film samples were characterized using x-ray diffractometer and optical absorption measurements. The electrical properties of the thin film samples were investigated via Wander Pauw method. XRD patterns indicated that the CdSe thin film samples have a hexagonal structure. The direct band gap of the CdSe thin film samples were determined from optical absorption and spectral response measurements of 1.76 eV. The resistivity of the CdSe thin film samples were found to vary in the range from 5.8x10''5 to 7.32x10''5 Ωcm depending to the substrate temperature

  11. Chemical bath deposition of Hg doped CdSe thin films and their characterization

    International Nuclear Information System (INIS)

    Bhuse, V.M.

    2005-01-01

    The deliberate addition of Hg in CdSe thin film have been carried out using a simple, modified, chemical bath deposition technique with the objective to study the effect of Hg doping on properties of CdSe thin films. Synthesis was initiated at 278 K temperature using complexed cadmium sulphate, mercuric nitrate and sodium selenosulphate in an aqueous ammonical medium at pH 10. Films were characterized by XRD, SEM, optical absorption, electrical and thermoelectric techniques. The 'as deposited' films were uniform, well adherent, nearly stoichiometric and polycrystalline in a single cubic phase (zinc blende). Crystallite size determined from XRD and SEM was found to increase slightly with addition of Hg. The optical band gap of CdSe remains constant upto 0.05 mol% Hg doping, while it decreases monotonically with further increase in mercury content. Dark dc electrical resistivity and conduction activation energy of CdSe were found to decrease initially upto 0.05 mol% of Hg, thereafter increased for higher values of Hg but remains less than those of CdSe. All the films showed n-type of conductivity. A CdSe film containing 0.05 mol% of Hg showed higher absorption coefficient, and conductivity

  12. Space charge limited conduction in CdSe thin films

    Indian Academy of Sciences (India)

    Unknown

    of trap limited space charge limited conduction (SCLC) at higher voltage. The transition voltage (Vt ) from ohmic to SCLC is found to be quite independent of ambient temperature as well as intensity of illumination. SCLC is explained on the basis of the exponential trap distribution in CdSe films. Trap depths estimated from.

  13. Electrosynthesis and characterization of Fe doped CdSe thin films from ethylene glycol bath

    International Nuclear Information System (INIS)

    Pawar, S.M.; Moholkar, A.V.; Rajpure, K.Y.; Bhosale, C.H.

    2007-01-01

    The CdSe and Fe doped CdSe (Fe:CdSe) thin films have been electrodeposited potentiostatically onto the stainless steel and fluorine doped tin oxide (FTO) glass substrates, from ethylene glycol bath containing (CH 3 COO) 2 .Cd.2H 2 O, SeO 2 , and FeCl 3 at room temperature. The doping concentration of Fe is optimized by using (photo) electrochemical (PEC) characterization technique. The deposition mechanism and Fe incorporation are studied by cyclic voltammetry. The structural, surface morphological and optical properties of the deposited CdSe and Fe:CdSe thin films have been studied by X-ray diffraction, scanning electron microscopy (SEM) and optical absorption techniques respectively. The PEC study shows that Fe:CdSe thin films are more photosensitive than that of undoped CdSe thin films. The X-ray diffraction analysis shows that the films are polycrystalline with hexagonal crystal structure. SEM studies reveal that the films with uniformly distributed grains over the entire surface of the substrate. The complete surface morphology has been changed after doping. Optical absorption study shows the presence of direct transition and a considerable decrease in bandgap, E g from 1.95 to 1.65 eV

  14. Rate constant of free electrons and holes recombination in thin films CdSe

    International Nuclear Information System (INIS)

    Radychev, N.A.; Novikov, G.F.

    2006-01-01

    Destruction kinetics of electrons generated in thin films CdSe by laser impulse (wave length is 337 nm, period of impulse - 8 nc) is studied by the method of microwave photoconductivity (36 GHz) at 295 K. Model of the process was suggested using the analysis of kinetics of photo-responses decay, and it allowed determination of rate constant of recombination of free electrons and holes in cadmium selenide - (4-6)x10 -11 cm 3 s -1 [ru

  15. Electrodeposition and characterization of CdSe x-Te 1- x semiconducting thin films

    Science.gov (United States)

    Benamar, E.; Rami, M.; Fahoume, M.; Chraibi, F.; Ennaoui, A.

    1999-07-01

    Thin polycrystalline films of cadmium chalcogenides CdSe xTe 1-x ( 0 ≤ x ≤ 1) have been prepared by electrochemical plating on ITO (indium tin oxide) coated glass substrates from an acid sulfate solution at 90 °C. Structural, morphological and compositional studies of the deposited films are reported as a function of the x coefficient. XRD analysis shows that all deposits have a cubic structure with a preferred orientation along the (111) direction. The composition in the films is found to vary linearly with the composition in the solution. The increase in the selenium content x in the CdSe xTe 1-x films decreases the lattice constant and increases the band gap. Nevertheless this latter presents a minimum for x = 0.27.

  16. Structural and optical properties of electron beam evaporated CdSe ...

    Indian Academy of Sciences (India)

    WINTEC

    ECMS Division, Central Electrochemical Research Institute, Karaikudi 630 006, India. † ... (0 0 2) direction of films has been confirmed by the X-ray diffraction analysis. The films ... CdSe is a direct band gap semiconductor belonging to the.

  17. Electrodeposition of nanocrystalline CdSe thin films from dimethyl sulfoxide solution: Nucleation and growth mechanism, structural and optical studies

    International Nuclear Information System (INIS)

    Henriquez, R.; Badan, A.; Grez, P.; Munoz, E.; Vera, J.; Dalchiele, E.A.; Marotti, R.E.; Gomez, H.

    2011-01-01

    Highlights: → Electrodeposition of CdSe nanocrystalline semiconductor thin films. → Polycrystalline wurtzite structure with a slight (1010) preferred orientation. → Absorption edge shifts in the optical properties due to quantum confinement effects. - Abstract: Cadmium selenide (CdSe) nanocrystalline semiconductor thin films have been synthesized by electrodeposition at controlled potential based in the electrochemical reduction process of molecular selenium in dimethyl sulfoxide (DMSO) solution. The nucleation and growth mechanism of this process has been studied. The XRD pattern shows a characteristic polycrystalline hexagonal wurtzite structure with a slight (1 0 1 0) crystallographic preferred orientation. The crystallite size of nanocrystalline CdSe thin films can be simply controlled by the electrodeposition potential. A quantum size effect is deduced from the correlation between the band gap energy and the crystallite size.

  18. Defects in CdSe thin films, induced by high energy electron irradiation

    International Nuclear Information System (INIS)

    Ion, L.; Antohe, S.; Tutuc, D.; Antohe, V.A.; Tazlaoanu, C.

    2004-01-01

    Defects induced in CdSe thin films by high energy electron irradiation are investigated by means of thermally stimulated currents (TSC) spectroscopy. Films were obtained by vacuum deposition from a single source and irradiated with a 5 x 10 13 electrons/cm 2 s -1 beam of 6-MeV energy. It was found that electrical properties of the films are controlled by a deep donor state, located at 0.38 eV below the bottom edge of the conduction band. Parameters of the traps responsible for the recorded TSC peaks were determined. (authors)

  19. Electrodeposition of CdSe coatings on ZnO nanowire arrays for extremely thin absorber solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Majidi, Hasti [Department of Chemical and Biological Engineering, Drexel University, 3141 Chestnut St, Philadelphia, PA 19104 (United States); Baxter, Jason B., E-mail: jbaxter@drexel.ed [Department of Chemical and Biological Engineering, Drexel University, 3141 Chestnut St, Philadelphia, PA 19104 (United States)

    2011-02-15

    We report on electrodeposition of CdSe coatings onto ZnO nanowire arrays and determine the effect of processing conditions on material properties such as morphology and microstructure. CdSe-coated ZnO nanowire arrays have potential use in extremely thin absorber (ETA) solar cells, where CdSe absorbs visible light and injects photoexcited electrons into the ZnO nanowires. We show that room-temperature electrodeposition enables growth of CdSe coatings that are highly crystalline, uniform, and conformal with precise control over thickness and microstructure. X-ray diffraction and transmission electron microscopy show nanocrystalline CdSe in both hexagonal and cubic phases with grain size {approx}5 nm. Coating morphology depends on electrodeposition current density. Uniform and conformal coatings were achieved using moderate current densities of {approx}2 mA cm{sup -2} for nanowires with roughness factor of {approx}10, while lower current densities resulted in sparse nucleation and growth of larger, isolated islands. Electrodeposition charge density controls the thickness of the CdSe coating, which was exploited to investigate the evolution of the morphology at early stages of nucleation and growth. UV-vis transmission spectroscopy and photoelectrochemical solar cell measurements demonstrate that CdSe effectively sensitizes ZnO nanowires to visible light.

  20. Electrodeposition of CdSe coatings on ZnO nanowire arrays for extremely thin absorber solar cells

    International Nuclear Information System (INIS)

    Majidi, Hasti; Baxter, Jason B.

    2011-01-01

    We report on electrodeposition of CdSe coatings onto ZnO nanowire arrays and determine the effect of processing conditions on material properties such as morphology and microstructure. CdSe-coated ZnO nanowire arrays have potential use in extremely thin absorber (ETA) solar cells, where CdSe absorbs visible light and injects photoexcited electrons into the ZnO nanowires. We show that room-temperature electrodeposition enables growth of CdSe coatings that are highly crystalline, uniform, and conformal with precise control over thickness and microstructure. X-ray diffraction and transmission electron microscopy show nanocrystalline CdSe in both hexagonal and cubic phases with grain size ∼5 nm. Coating morphology depends on electrodeposition current density. Uniform and conformal coatings were achieved using moderate current densities of ∼2 mA cm -2 for nanowires with roughness factor of ∼10, while lower current densities resulted in sparse nucleation and growth of larger, isolated islands. Electrodeposition charge density controls the thickness of the CdSe coating, which was exploited to investigate the evolution of the morphology at early stages of nucleation and growth. UV-vis transmission spectroscopy and photoelectrochemical solar cell measurements demonstrate that CdSe effectively sensitizes ZnO nanowires to visible light.

  1. Structural and optical properties of nanocrystalline CdSe and Al:CdSe thin films for photoelectrochemical application

    Energy Technology Data Exchange (ETDEWEB)

    Gawali, Sanjay A. [Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur - 416 004 (India); Bhosale, C.H., E-mail: bhosale_ch@yahoo.com [Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur - 416 004 (India)

    2011-10-03

    Highlights: {yields} The CdSe and Al:CdSe thin films have been successfully deposited by SPT. {yields} Hexagonal cubic structured CdSe and Al: CdSe thin films are observed. {yields} Large number of fine grains, Uniform and compact growth morphology. {yields} Hydrophilic surface nature. {yields} Al:CdSe have better PEC performance than CdSe. - Abstract: Nanocrystalline CdSe and Al:CdSe semiconductor thin films have been successfully synthesized onto amorphous and FTO glass substrates by spray pyrolysis technique. Aqueous solutions containing precursors of Cd and Se have been used to obtain good quality films. The optimized films have been characterized for their structural, morphological, wettability and optical properties. X-ray diffraction (XRD) studies show that the films are polycrystalline in nature with hexagonal crystal structure. Scanning electron microscopy (SEM) studies show that the film surface is smooth, uniform and compact in nature. Water wettability study reveals that the films are hydrophilic behavior. The formation of CdSe and Al:CdSe thin film were confirmed with the help of FTIR spectroscopy. UV-vis spectrophotometric measurement showed a direct allowed band gap lying in the range 1.673-1.87 eV. Output characteristics were studied by using cell configuration n- CdSe/Al:CdSe |1 M (NaOH + Na{sub 2} + S)|C. An efficient solar cell having a power conversion efficiency of 0.38% at illumination 25 mW cm{sup -2} was fabricated.

  2. Opto-electrical energy conversion by thin electrolytic CdSe films on Ni substrates

    International Nuclear Information System (INIS)

    Glenis, G X; Athanassopoulou, M D; Argyropoulos, Th G; Dervos, C T

    2015-01-01

    Thin-films (300 nm) of zinc-blende (cubic structure) CdSe (111) electrolytically deposited on nickel substrates had their surface characteristics investigated by XRD, SEM, and profilometry scans. A metal-CdSe-metal structure was formed by positioning a Au electrode on top of CdSe and the I–V characteristics of the resulting device were investigated in the dark and under low intensities (≤0.2 mW cm −2 ) of diffused solar radiation. The experimental results show that the illuminated structure is an active device that produces electric power in the 2nd quadrant of the I–V curve. This response may be related to the Ni-to-CdSe interface, where carriers are effectively generated as a result of deep energy level formations, spatially confined in the interfacial region of the depletion layer width of the Ni-CdSe junction. A potential energy diagram is proposed to present the spatially and energetically confined deep-level parameters, the operation principles (carrier generation and transport processes) across the structure and link them to the obtained I–V response. A mathematical modeling based on the Schokley-Read-Hall recombination theory confirms the experimentally obtained current profiles of illuminated junctions. Such opto-electrical tranducers might be implemented in multilayer photovoltaic hetero-structures to enhance their conversion efficiencies and reduce their operating temperatures. (paper)

  3. Opto-electrical energy conversion by thin electrolytic CdSe films on Ni substrates

    Science.gov (United States)

    Glenis, G. X.; Athanassopoulou, M. D.; Argyropoulos, Th G.; Dervos, C. T.

    2015-02-01

    Thin-films (300 nm) of zinc-blende (cubic structure) CdSe (111) electrolytically deposited on nickel substrates had their surface characteristics investigated by XRD, SEM, and profilometry scans. A metal-CdSe-metal structure was formed by positioning a Au electrode on top of CdSe and the I-V characteristics of the resulting device were investigated in the dark and under low intensities (≤0.2 mW cm-2) of diffused solar radiation. The experimental results show that the illuminated structure is an active device that produces electric power in the 2nd quadrant of the I-V curve. This response may be related to the Ni-to-CdSe interface, where carriers are effectively generated as a result of deep energy level formations, spatially confined in the interfacial region of the depletion layer width of the Ni-CdSe junction. A potential energy diagram is proposed to present the spatially and energetically confined deep-level parameters, the operation principles (carrier generation and transport processes) across the structure and link them to the obtained I-V response. A mathematical modeling based on the Schokley-Read-Hall recombination theory confirms the experimentally obtained current profiles of illuminated junctions. Such opto-electrical tranducers might be implemented in multilayer photovoltaic hetero-structures to enhance their conversion efficiencies and reduce their operating temperatures.

  4. Effect of deposition temperature on the structural and optical properties of CdSe QDs thin films deposited by CBD method

    International Nuclear Information System (INIS)

    Laatar, F.; Harizi, A.; Smida, A.; Hassen, M.; Ezzaouia, H.

    2016-01-01

    Highlights: • Synthesis of CdSe QDs with L-Cysteine capping agent for applications in nanodevices. • The films of CdSe QDs present uniform and good dispersive particles at the surface. • Effect of bath temperature on the structural and optical properties of CdSe QDs thin films. • Investigation of the optical constants and dispersion parameters of CdSe QDs thin films. - Abstract: Cadmium selenide quantum dots (CdSe QDs) thin films were deposited onto glass substrates by a chemical bath deposition (CBD) method at different temperatures from an aqueous solution containing L-Cysteine (L-Cys) as capping agent. The evolution of the surface morphology and elemental composition of the CdSe films were studied by AFM, SEM, and EDX analyses. Structural and optical properties of CdSe thin films were investigated by XRD, UV–vis and PL spectroscopy. The dispersion behavior of the refractive index is described using the single oscillator Wemple-DiDomenico (W-D) model, and the physical dispersion parameters are calculated as a function of deposition temperature. The dispersive optical parameters such as average oscillator energy (E_o), dispersion energy (E_d), and static refractive index (n_o) were found to vary with the deposition temperature. Besides, the electrical free carrier susceptibility (χ_e) and the carrier concentration of the effective mass ratio (N/m*) were evaluated according to the Spitzer-Fan model.

  5. Effect of deposition temperature on the structural and optical properties of CdSe QDs thin films deposited by CBD method

    Energy Technology Data Exchange (ETDEWEB)

    Laatar, F., E-mail: fakher8laatar@gmail.com [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Harizi, A. [Photovoltaic and Semiconductor Materials Laboratory, Engineering Industrial Department, ENIT, Tunis El Manar University, BP 37, Le Belvédère, 1002 Tunis (Tunisia); Smida, A. [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Hassen, M. [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Higher Institute of Applied Science and Technology of Sousse, City Taffala (Ibn Khaldun), 4003 Sousse (Tunisia); Ezzaouia, H. [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia)

    2016-06-15

    Highlights: • Synthesis of CdSe QDs with L-Cysteine capping agent for applications in nanodevices. • The films of CdSe QDs present uniform and good dispersive particles at the surface. • Effect of bath temperature on the structural and optical properties of CdSe QDs thin films. • Investigation of the optical constants and dispersion parameters of CdSe QDs thin films. - Abstract: Cadmium selenide quantum dots (CdSe QDs) thin films were deposited onto glass substrates by a chemical bath deposition (CBD) method at different temperatures from an aqueous solution containing L-Cysteine (L-Cys) as capping agent. The evolution of the surface morphology and elemental composition of the CdSe films were studied by AFM, SEM, and EDX analyses. Structural and optical properties of CdSe thin films were investigated by XRD, UV–vis and PL spectroscopy. The dispersion behavior of the refractive index is described using the single oscillator Wemple-DiDomenico (W-D) model, and the physical dispersion parameters are calculated as a function of deposition temperature. The dispersive optical parameters such as average oscillator energy (E{sub o}), dispersion energy (E{sub d}), and static refractive index (n{sub o}) were found to vary with the deposition temperature. Besides, the electrical free carrier susceptibility (χ{sub e}) and the carrier concentration of the effective mass ratio (N/m*) were evaluated according to the Spitzer-Fan model.

  6. Simple flash evaporator for making thin films of compounds

    Energy Technology Data Exchange (ETDEWEB)

    Hemanadhan, M.; Bapanayya, Ch.; Agarwal, S. C. [Department of Physics, Indian Institute of Technology, Kanpur 208016 (India)

    2010-07-15

    A simple and compact arrangement for flash evaporation is described. It uses a cell phone vibrator for powder dispensing that can be incorporated into a vacuum deposition chamber without any major alterations. The performance of the flash evaporation system is checked by making thin films of the optical memory chalcogenide glass Ge{sub 2}Sb{sub 2}Te{sub 5} (GST). Energy dispersive x-ray analysis shows that the flash evaporation preserves the stoichiometry in thin films.

  7. Chemical synthesis and characterization of CdSe thin films deposited by SILAR technique for optoelectronic applications

    Directory of Open Access Journals (Sweden)

    K.B. Chaudhari

    2016-12-01

    Full Text Available CdSe thin films were deposited on the glass substrate by successive ionic layer adsorption and reaction (SILAR method. Different sets of the film are prepared by changing the number of immersion cycles as 30, 40, 50 and 60. Further the effect of a number of immersion cycles on the characteristic structural, morphological, optical and electrical properties of the films are studied. The XRD studies revealed that the deposited films showed hexagonal structure with most prominent reflection along (1 0 1 plane. Moreover, the peak intensity of (1 0 1 plane is found to be increased as the number of immersion cycles is increased. All the thin films look relatively smooth and homogeneous covering the entire surface area in FESEM image. Optical properties of the CdSe thin films for a different number of immersion cycles were studied, which indicates that the absorbance increases with the increase in the immersion cycles. Furthermore, the optical band-gap in conjunction with the electrical resistivity was found to get decreased with increase in the immersion cycles. A good correlation between the number of immersion cycles and the physical properties indicates a simple method to manipulate the CdSe material properties for optoelectronic applications.

  8. Annealing effects on the photoresponse properties of CdSe nanocrystal thin films

    International Nuclear Information System (INIS)

    Lou Shiyun; Zhou Changhua; Wang Hongzhe; Shen Huaibin; Cheng Gang; Du Zuliang; Zhou, Shaomin; Li Linsong

    2011-01-01

    Highlights: → The as-prepared CdSe nanocrystal films were treated at 500 deg. C for 3 h under continuous N 2 . → Annealing process removed the organic capping completely and eliminated oxide on the CdSe surface. → Thermal annealing resulted the increase of the crystallite sizes and necking the NCs. → The photoresponse speed of the CdSe nanocrystal films was improved. - Abstract: The photoresponse properties of the as-prepared and annealed close-packed CdSe nanocrystal (NC) films were investigated under laser illumination by Kelvin probe force microscopy. The annealing process improved the photoresponse speed of the CdSe NC films. The work function of the annealed CdSe NC films changed more rapidly than that of the non-annealed film in air at room temperature. Combined with X-ray photoelectron spectroscopy measurements and thermogravimetric analysis, the observed phenomena can be interpreted that annealing process removed the organic capping agents completely and eliminated oxide on the CdSe surface, which formed the tunnel barrier between NCs in the CdSe NC films. Consequently, it improved the separation rate of photoelectric charges and thus provided high speed photoresponse.

  9. Thin film circuits for future applications. Pt. 2. Evaporation technique

    Energy Technology Data Exchange (ETDEWEB)

    Haug, G; Houska, K H; Schmidt, H J; Sprengel, H P; Wohak, K

    1976-06-01

    Investigations of thin film diffusion processes and reactions with encapsulation materials resulted in improved long term stability of evaporated NiCr resistors, SiO capacitors and NiCr/Au conductors for thin film circuits. Stable NiCr resistor networks can be formed on ceramic substrates, and SiO capacitors of good quality can be deposited on the new very smooth ceramic substrates. The knowledge of the influence of evaporation parameters make the production of SiO capacitors with definite properties and good reproducibility possible. The range of capacitance of tantalum thin film circuits can be extended by integration with evaporated SiO capacitors.

  10. Structuring of thin-film polymer mixtures upon solvent evaporation

    NARCIS (Netherlands)

    Schaefer, C.; Michels, J.J.; van der Schoot, P.P.A.M.

    2016-01-01

    We theoretically study the impact of solvent evaporation on the dynamics of isothermal phase separation of ternary polymer solutions in thin films. In the early stages we obtain a spinodal length scale that decreases with time under the influence of ongoing evaporation. After that rapid demixing

  11. Structuring of Thin-Film Polymer Mixtures upon Solvent Evaporation

    NARCIS (Netherlands)

    Schaefer, C.; Michels, J. J.; van der Schoot, P.

    2016-01-01

    We theoretically study the impact of solvent evaporation on the dynamics of isothermal phase separation of ternary polymer solutions in thin films. In the early stages we obtain a spinodal length scale that decreases with time under the influence of ongoing evaporation. After that rapid demixing

  12. Parametric study of thin film evaporation from nanoporous membranes

    Science.gov (United States)

    Wilke, Kyle L.; Barabadi, Banafsheh; Lu, Zhengmao; Zhang, TieJun; Wang, Evelyn N.

    2017-10-01

    The performance and lifetime of advanced electronics are often dictated by the ability to dissipate heat generated within the device. Thin film evaporation from nanoporous membranes is a promising thermal management approach, which reduces the thermal transport distance across the liquid film while also providing passive capillary pumping of liquid to the evaporating interface. In this work, we investigated the dependence of thin film evaporation from nanoporous membranes on a variety of geometric parameters. Anodic aluminum oxide membranes were used as experimental templates, where pore radii of 28-75 nm, porosities of 0.1-0.35, and meniscus locations down to 1 μm within the pore were tested. We demonstrated different heat transfer regimes and observed more than an order of magnitude increase in dissipated heat flux by operating in the pore-level evaporation regime. The pore diameter had little effect on pore-level evaporation performance due to the negligible conduction resistance from the pore wall to the evaporating interface. The dissipated heat flux scaled with porosity as the evaporative area increased. Furthermore, moving the meniscus as little as 1 μm into the pore decreased the dissipated heat flux by more than a factor of two due to the added resistance to vapor escaping the pore. The experimental results elucidate thin film evaporation from nanopores and confirm findings of recent modeling efforts. This work also provides guidance for the design of future thin film evaporation devices for advanced thermal management. Furthermore, evaporation from nanopores is relevant to water purification, chemical separations, microfluidics, and natural processes such as transpiration.

  13. Obtention of thin depositions by the vacuum evaporation technique

    International Nuclear Information System (INIS)

    Gonzalez Mateu, D.; Labrada, A.; Voronin, A.

    1991-01-01

    The vacuum evaporating technique used to prepare thin depositions, and the technical characteristics of the constructed installation are described. 235 U y 238 U nuclear target for the fission researches were obtained. Aluminium and gold self-supporting foils were obtained too

  14. Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation

    Directory of Open Access Journals (Sweden)

    Swati Arora

    2017-01-01

    Full Text Available Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te and bismuth (Bi were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD and scanning electron microscopy (SEM to show granular growth.

  15. Cuinse2 Thin Film For Solar Cell By Flash Evaporation

    OpenAIRE

    A.H. Soepardjo

    2009-01-01

    Deposition of thin films for material solar cell CuInSe2 are relatively simple. In this research mainly focused on the use of flash evaporation method, and the material created can then be characterized by optical and electrical properties. The optical characterization is done by X-ray Diffraction (XRD), Energy Dispersive Spectroscopy (EDS), and transmission and reflection by UV-VIS spectrophotometry. Electrical characterization is done by utilizing the Hall effect equipment. From these chara...

  16. Cuinse2 Thin Film For Solar Cell By Flash Evaporation

    Directory of Open Access Journals (Sweden)

    A.H. Soepardjo

    2009-11-01

    Full Text Available Deposition of thin films for material solar cell CuInSe2 are relatively simple. In this research mainly focused on the use of flash evaporation method, and the material created can then be characterized by optical and electrical properties. The optical characterization is done by X-ray Diffraction (XRD, Energy Dispersive Spectroscopy (EDS, and transmission and reflection by UV-VIS spectrophotometry. Electrical characterization is done by utilizing the Hall effect equipment. From these characterization, the atomic structure, absorption coefficient, energy gap, material type, composition of each elements and the mobility of CuInSe2 can be measured and determined. During process evaporation were carried out at substrate temperatures the range between 20ºC-415ºC.

  17. Interfacial passivation of CdS layer to CdSe quantum dots-sensitized electrodeposited ZnO nanowire thin films

    International Nuclear Information System (INIS)

    Zhang, Jingbo; Sun, Chuanzhen; Bai, Shouli; Luo, Ruixian; Chen, Aifan; Sun, Lina; Lin, Yuan

    2013-01-01

    ZnO porous thin films with nanowire structure were deposited by the one-step electrochemical deposition method. And a CdS layer was coated on the as-deposited ZnO nanowire thin films by successive ionic layer adsorption and reaction (SILAR) method to passivate surface states. Then the films were further sensitized by CdSe quantum dots (QDs) to serve as a photoanode for fabricating quantum dots-sensitized solar cells (QDSSCs). The effect of the CdS interfacial passivation layer on the performance of the QDSSCs was systematically investigated by varying the SILAR cycle number and heating the passivation layer. The amorphous CdS layer with an optimized thickness can effectively suppress the recombination of the injected electrons with holes on QDs and the redox electrolyte. The newly formed CdS layer on the surface of the ZnO nanowire thin film obviously prolongs the electron lifetime in the passivated ZnO nanoporous thin film because of the lower surface trap density in the ZnO nanowires after CdS deposition, which is favorable to the higher short-circuit photocurrent density (J sc ). For the CdSe QDs-sensitized ZnO nanoporous thin film with the interfacial passivation layer, the J sc and conversion efficiency can reach a maximum of 8.36 mA cm −2 and 2.36%, respectively. The conversion efficiency was improved by 83.47% compared with that of the cell based on the CdSe QDs-sensitized ZnO nanoporous thin film without CdS interfacial passivation (0.39%)

  18. In situ observation of electron-beam-induced dewetting of CdSe thin film embedded in SiO2

    DEFF Research Database (Denmark)

    Fabrim, Zacarias Eduardo; Kjelstrup-Hansen, Jakob; Fichtner, Paulo F. P.

    In this work we show the dewetting process of the CdSe thin films induced by electron beam irradiation. A multilayer heterostructure of SiO2/CdSe/SiO2 was made by a magnetron sputtering process. A plan-view (PV) sample was irradiated with 200 kV electrons in the TEM with two current densities: 0.......33 A.cm2 and 1.0 A.cm2 and at 80 kV with 0.37 A.cm2. The dewetting of the CdSe film is inferred by a number of micrographs taken during the irradiation. The microstructural changes were analyzed under the assumption of being induced by ballistic collision effects in the absence of sample heating....

  19. Structural and electrical properties of polycrystalline CdSe thin films, before and after irradiation with 6 MeV accelerated electrons

    International Nuclear Information System (INIS)

    Ion, L.; Antohe, V.A.; Tazlaoanu, C.; Antohe, S.; Scarlat, F.

    2004-01-01

    Structural and electrical properties of polycrystalline CdSe thin films irradiated with high-energy electrons are analyzed. The samples were prepared by vacuum deposition of CdSe powder onto optical glass substrate. Their structure and the temperature dependence of the electrical resistance were determined, both before and after irradiation with 6 MeV electrons at fluencies up to 10 16 electrons/cm 2 . There were no measurable changes in the crystalline structure of the films after irradiation. Electrical properties are controlled by the defect level of donor type, possibly a selenium vacancy, with two ionizing states having ionization energies of about 0.40 eV and 0.22 eV, respectively. The major effect of the irradiation is to increase significantly the concentration of these defects. (authors)

  20. Characteristics of heat transfer fouling of thin stillage using model thin stillage and evaporator concentrates

    Science.gov (United States)

    Challa, Ravi Kumar

    The US fuel ethanol demand was 50.3 billion liters (13.3 billion gallons) in 2012. Corn ethanol was produced primarily by dry grind process. Heat transfer equipment fouling occurs during corn ethanol production and increases the operating expenses of ethanol plants. Following ethanol distillation, unfermentables are centrifuged to separate solids as wet grains and liquid fraction as thin stillage. Evaporator fouling occurs during thin stillage concentration to syrup and decreases evaporator performance. Evaporators need to be shutdown to clean the deposits from the evaporator surfaces. Scheduled and unscheduled evaporator shutdowns decrease process throughput and results in production losses. This research were aimed at investigating thin stillage fouling characteristics using an annular probe at conditions similar to an evaporator in a corn ethanol production plant. Fouling characteristics of commercial thin stillage and model thin stillage were studied as a function of bulk fluid temperature and heat transfer surface temperature. Experiments were conducted by circulating thin stillage or carbohydrate mixtures in a loop through the test section which consisted of an annular fouling probe while maintaining a constant heat flux by electrical heating and fluid flow rate. The change in fouling resistance with time was measured. Fouling curves obtained for thin stillage and concentrated thin stillage were linear with time but no induction periods were observed. Fouling rates for concentrated thin stillage were higher compared to commercial thin stillage due to the increase in solid concentration. Fouling rates for oil skimmed and unskimmed concentrated thin stillage were similar but lower than concentrated thin stillage at 10% solids concentration. Addition of post fermentation corn oil to commercial thin stillage at 0.5% increments increased the fouling rates up to 1% concentration but decreased at 1.5%. As thin stillage is composed of carbohydrates, protein, lipid

  1. Effects of annealing on evaporated SnS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sakrani, Samsudi; Ismail, Bakar [Universiti Teknologi Malaysia, Skudai, Johor Bahru (Malaysia). Dept. of Physics

    1994-12-31

    The effects of annealing of evaporated tin sulphide thin films (SnS) are described. The films were initially deposited onto glass substrate, followed by annealing in an encapsulated carbon block under the running argon gas at 310 degree Celsius. Short time annealing of the films results in a slight change of the compositions to a mix SnS/SnS sub 2 compound, and the tendency of increasing SnS sub 2 formation was observed on the films annealed for longer periods up to 20 hours. X-ray results showed the transformation of SnS peaks (040) and (080) to predominantly SnS sub 2 peaks - (001), (100), (101), and (110). The associated absorption coefficients measured on the films were found to be greater than 10 sup 5 cm sup -1, with indication of higher photon energy leading to the formation of SnS sub 2 compound.

  2. Effects of annealing on evaporated SnS thin films

    International Nuclear Information System (INIS)

    Samsudi Sakrani; Bakar Ismail

    1994-01-01

    The effects of annealing of evaporated tin sulphide thin films (SnS) are described. The films were initially deposited onto glass substrate, followed by annealing in an encapsulated carbon block under the running argon gas at 310 degree Celsius. Short time annealing of the films results in a slight change of the compositions to a mix SnS/SnS sub 2 compound, and the tendency of increasing SnS sub 2 formation was observed on the films annealed for longer periods up to 20 hours. X-ray results showed the transformation of SnS peaks (040) and (080) to predominantly SnS sub 2 peaks - (001), (100), (101), and (110). The associated absorption coefficients measured on the films were found to be greater than 10 sup 5 cm sup -1, with indication of higher photon energy leading to the formation of SnS sub 2 compound

  3. Large improvement of electron extraction from CdSe quantum dots into a TiO2 thin layer by N3 dye coabsorption

    International Nuclear Information System (INIS)

    Mora-Sero, Ivan; Dittrich, Thomas; Susha, Andrei S.; Rogach, Andrey L.; Bisquert, Juan

    2008-01-01

    Extraction of electrons and holes photogenerated in CdSe quantum dots (QD) of 2.3 nm diameter, is monitored by Surface Photovoltage Spectroscopy. The extraction of electrons into a thin TiO 2 layer increases five-fold by absorption of N3 dye molecules on top of the QD layer. This process is facilitated by efficient hole extraction from the valence band of the QDs to the ground state of the N3 dye. Our results represent a direct measurement of charge separation in the N3/QD/TiO 2 system

  4. Quantum-dot light-emitting diodes utilizing CdSe /ZnS nanocrystals embedded in TiO2 thin film

    Science.gov (United States)

    Kang, Seung-Hee; Kumar, Ch. Kiran; Lee, Zonghoon; Kim, Kyung-Hyun; Huh, Chul; Kim, Eui-Tae

    2008-11-01

    Quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated on Si wafers by embedding core-shell CdSe /ZnS nanocrystals in TiO2 thin films via plasma-enhanced metallorganic chemical vapor deposition. The n-TiO2/QDs /p-Si LED devices show typical p-n diode current-voltage and efficient electroluminescence characteristics, which are critically affected by the removal of QD surface ligands. The TiO2/QDs /Si system we presented can offer promising Si-based optoelectronic and electronic device applications utilizing numerous nanocrystals synthesized by colloidal solution chemistry.

  5. Photoconductivity in reactively evaporated copper indium selenide thin films

    Science.gov (United States)

    Urmila, K. S.; Asokan, T. Namitha; Pradeep, B.; Jacob, Rajani; Philip, Rachel Reena

    2014-01-01

    Copper indium selenide thin films of composition CuInSe2 with thickness of the order of 130 nm are deposited on glass substrate at a temperature of 423 ±5 K and pressure of 10-5 mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%), Indium (99.999%) and Selenium (99.99%) as the elemental starting materials. X-ray diffraction (XRD) studies shows that the films are polycrystalline in nature having preferred orientation of grains along the (112) plane. The structural type of the film is found to be tetragonal with particle size of the order of 32 nm. The structural parameters such as lattice constant, particle size, dislocation density, number of crystallites per unit area and strain in the film are also evaluated. The surface morphology of CuInSe2 films are studied using 2D and 3D atomic force microscopy to estimate the grain size and surface roughness respectively. Analysis of the absorption spectrum of the film recorded using UV-Vis-NIR Spectrophotometer in the wavelength range from 2500 nm to cutoff revealed that the film possess a direct allowed transition with a band gap of 1.05 eV and a high value of absorption coefficient (α) of 106 cm-1 at 570 nm. Photoconductivity at room temperature is measured after illuminating the film with an FSH lamp (82 V, 300 W). Optical absorption studies in conjunction with the good photoconductivity of the prepared p-type CuInSe2 thin films indicate its suitability in photovoltaic applications.

  6. FABRICATION OF ZNS THIN FILM FOR INORGANIC EL BY THE VACCUUM EVAPORATION

    OpenAIRE

    龍見, 雅美; 島谷, 圭市; 小西, 信行; 元木, 健作

    2008-01-01

    "Zinc sulfide is a typical material for inorganic electroluminescent(EL) device. Recently very high luminance and life time e has been reported on an inorganic EL device based on thin film zinc sulfide material. The present study tries to realize high quality zinc sulfide thin film for EL device. The thin film was grown by the vacuum evaporation method. In order to obtain stoichiometric thin film, the vacuum evaporation was carried out in a quasi-closed vessel under a condition of sulfur atmo...

  7. Evaporators

    DEFF Research Database (Denmark)

    Knudsen, Hans Jørgen Høgaard

    1996-01-01

    Type of evaporators. Regulation. Thermal dimensioning. Determination of pressure loss and heat transfer coefficients.......Type of evaporators. Regulation. Thermal dimensioning. Determination of pressure loss and heat transfer coefficients....

  8. Measurements of the evaporation rate upon evaporation of thin layer at different heating modes

    OpenAIRE

    Gatapova E.Ya.; Korbanova E.G.

    2017-01-01

    Technique for measurements of the evaporation rate of a heated liquid layer is presented. The local minimum is observed which is associated with the point of equilibrium of the liquid–gas interface. It is shown when no heat is applied to the heating element temperature in gas phase is larger than in liquid, and evaporation occurs with the rate of 0.014–0.018 μl/s. Then evaporation rate is decreasing with increasing the heater temperature until the equilibrium point is reached at the liquid–ga...

  9. Evaporation

    International Nuclear Information System (INIS)

    Delaney, B.T.; Turner, R.J.

    1989-01-01

    Evaporation has long been used as a unit operation in the manufacture of various products in the chemical-process industries. In addition, it is currently being used for the treatment of hazardous wastes such as radioactive liquids and sludges, metal-plating wastes, and other organic and inorganic wastes. Design choice is dependent on the liquid to be evaporated. The three most common types of evaporation equipment are the rising-film, falling-film, and forced-circulation evaporators. The first two rely on boiling heat transfer and the latter relies on flash vaporization. Heat exchangers, flash tanks, and ejectors are common auxiliary equipment items incorporated with evaporator bodies to complete an evaporator system. Properties of the liquid to be evaporated are critical in final selection of an appropriate evaporator system. Since operating costs are a significant factor in overall cost, heat-transfer characteristics and energy requirements are important considerations. Properties of liquids which are critical to the determination of final design include: heat capacity, heat of vaporization, density, thermal conductivity, boiling point rise, and heat-transfer coefficient. Evaporation is an expensive technology, both in terms of capital costs and operating costs. Additionally, mechanical evaporation produces a condensate and a bottoms stream, one or both of which may require further processing or disposal. 3 figs

  10. Structural characterization of vacuum evaporated ZnSe thin films

    Indian Academy of Sciences (India)

    The lattice parameter, grain size, average internal stress, microstrain, dislocation density and degree of pre- ferred orientation in the film are calculated and correlated with Ts. Keywords. ZnSe thin films; X-ray diffraction; average internal stress; microstrain; dislocation density. 1. Introduction. Thin films of ZnSe has attracted ...

  11. Morphological Evolution of Gyroid-Forming Block Copolymer Thin Films with Varying Solvent Evaporation Rate.

    Science.gov (United States)

    Wu, Yi-Hsiu; Lo, Ting-Ya; She, Ming-Shiuan; Ho, Rong-Ming

    2015-08-05

    In this study, we aim to examine the morphological evolution of block copolymer (BCP) nanostructured thin films through solvent evaporation at different rates for solvent swollen polystyrene-block-poly(l-lactide) (PS-PLLA). Interesting phase transitions from disorder to perpendicular cylinder and then gyroid can be found while using a partially selective solvent for PS to swell PS-PLLA thin film followed by solvent evaporation. During the transitions, gyroid-forming BCP thin film with characteristic crystallographic planes of (111)G, (110)G, and (211)G parallel to air surface can be observed, and will gradually transform into coexisting (110)G and (211)G planes, and finally transforms to (211)G plane due to the preferential segregation of constituted block to the surface (i.e., the thermodynamic origin for self-assembly) that affects the relative amount of each component at the air surface. With the decrease on the evaporation rate, the disorder phase will transform to parallel cylinder and then directly to (211)G without transition to perpendicular cylinder phase. Most importantly, the morphological evolution of PS-PLLA thin films is strongly dependent upon the solvent removal rate only in the initial stage of the evaporation process due to the anisotropy of cylinder structure. Once the morphology is transformed back to the isotropic gyroid structure after long evaporation, the morphological evolution will only relate to the variation of the surface composition. Similar phase transitions at the substrate can also be obtained by controlling the ratio of PLLA-OH to PS-OH homopolymers to functionalize the substrate. As a result, the fabrication of well-defined nanostructured thin films with controlled orientation can be achieved by simple swelling and deswelling with controlled evaporation rate.

  12. Controllable size reduction of CdSe nanowires through the intermediate formation of Se-coated CdSe nanowires using acid and thermal treatment

    Energy Technology Data Exchange (ETDEWEB)

    Lam, N S [Department of Physics, Chinese University of Hong Kong, Hong Kong (China); Wong, K W [Department of Physics, Chinese University of Hong Kong, Hong Kong (China); Li, Q [Department of Physics, Chinese University of Hong Kong, Hong Kong (China); Zheng, Z [Department of Physics, Chinese University of Hong Kong, Hong Kong (China); Lau, W M [Surface Science Western, University of Western Ontario, London, ON, N6A 5B7 (Canada)

    2007-10-17

    Thinning of CdSe nanowires (NWs) with controllable size was achieved by a simple acid treatment and subsequent annealing on thick CdSe NWs synthesized from vapour phase growth. During acid treatment, not only the undesired impurities such as native oxides of Cd and Se could be etched, but surface reactions of CdSe NWs were also observed, resulting in the formation of a layer of elemental Se around a thinner CdSe core. As a result, a heterostructure of Se - CdSe nanostructure formed after acid treatment of CdSe NWs. Upon thermal annealing, the Se shell was effectively removed and thinned stoichiometric single-crystalline CdSe NWs could be obtained. It was observed that NWs could be thinned by up to {approx}60% in diameter by acid treatment and subsequent Se thermal desorption. The degree of thinning was controllable by adjusting the duration of acid treatment. The success of the thinning of CdSe NWs by simple acid treatment and the annealing process reported here opens a new processing route for obtaining stoichiometric CdSe NWs with controllable size reduction and improved aspect ratio. This can undoubtedly broadly improve the range of applications of 1D CdSe nanostructures and allow more exploration of their uni-directional properties. A correction was made to the last paragraph of section 3 on 18 September 2007. The corrected electronic version is identical to the print version.

  13. Controllable size reduction of CdSe nanowires through the intermediate formation of Se-coated CdSe nanowires using acid and thermal treatment

    International Nuclear Information System (INIS)

    Lam, N S; Wong, K W; Li, Q; Zheng, Z; Lau, W M

    2007-01-01

    Thinning of CdSe nanowires (NWs) with controllable size was achieved by a simple acid treatment and subsequent annealing on thick CdSe NWs synthesized from vapour phase growth. During acid treatment, not only the undesired impurities such as native oxides of Cd and Se could be etched, but surface reactions of CdSe NWs were also observed, resulting in the formation of a layer of elemental Se around a thinner CdSe core. As a result, a heterostructure of Se - CdSe nanostructure formed after acid treatment of CdSe NWs. Upon thermal annealing, the Se shell was effectively removed and thinned stoichiometric single-crystalline CdSe NWs could be obtained. It was observed that NWs could be thinned by up to ∼60% in diameter by acid treatment and subsequent Se thermal desorption. The degree of thinning was controllable by adjusting the duration of acid treatment. The success of the thinning of CdSe NWs by simple acid treatment and the annealing process reported here opens a new processing route for obtaining stoichiometric CdSe NWs with controllable size reduction and improved aspect ratio. This can undoubtedly broadly improve the range of applications of 1D CdSe nanostructures and allow more exploration of their uni-directional properties. A correction was made to the last paragraph of section 3 on 18 September 2007. The corrected electronic version is identical to the print version

  14. Property elucidation of vacuum-evaporated zinc telluride thin film ...

    Indian Academy of Sciences (India)

    J U Ahamed

    2017-08-31

    Aug 31, 2017 ... method for the deposition of ZnTe thin film as compared to other methods. ... the advantages and disadvantages of different deposition process, it was ... by a spiral resistance heater and the temperature was measured by a ...

  15. Processing of C60 thin films by Matrix-Assisted Pulsed Laser Evaporation (MAPLE)

    DEFF Research Database (Denmark)

    Canulescu, Stela; Schou, Jørgen; Fæster, Søren

    2011-01-01

    Thin films of fullerenes (C60) were deposited onto silicon using matrix-assisted pulsed laser evaporation (MAPLE). The deposition was carried out from a frozen homogeneous dilute solution of C60 in anisole (0.67 wt%), and over a broad range of laser fluences, from 0.15 J/cm2 up to 3.9 J/cm2. MAPLE...

  16. Non-Evaporable Getter Thin Film Coatings for Vacuum Applications

    CERN Document Server

    Prodromides, A E

    2002-01-01

    Getters are solid materials capable of chemisorbing gas molecules on their surface: getters are chemical pumps. They are widely used for a variety of applications such as in particle accelerators, vacuum tubes, field-emission display (FED), inert gas purification systems, H2 plasma purification, hydrogen species recycling as in the Tokamak Fusion Test Reactor. Among the different Non-Evaporable Getter (NEG) materials tested, the TiZrV alloys have the lowest activation temperature. For this reason, the TiZrV coatings were the object of this work. In particular, the aim of this investigation was to understand how to optimise three important properties of TiZrV coatings: to achieve the lowest possible activation temperature (Ta), and to obtain the highest pumping speed and surface pumping capacity. This objective is important in the context of the Large Hadron Collider (LHC) accelerator, since, before this work, the understanding and the knowledge of the TiZrV coatings properties were insufficient to adopt it fo...

  17. Effects of solvent evaporation conditions on solvent vapor annealed cylinder-forming block polymer thin films

    Science.gov (United States)

    Grant, Meagan; Jakubowski, William; Nelson, Gunnar; Drapes, Chloe; Baruth, A.

    Solvent vapor annealing is a less time and energy intensive method compared to thermal annealing, to direct the self-assembly of block polymer thin films. Periodic nanostructures have applications in ultrafiltration, magnetic arrays, or other structures with nanometer dimensions, driving its continued interest. Our goal is to create thin films with hexagonally packed, perpendicular aligned cylinders of poly(lactide) in a poly(styrene) matrix that span the thickness of the film with low anneal times and low defect densities, all with high reproducibility, where the latter is paramount. Through the use of our computer-controlled, pneumatically-actuated, purpose-built solvent vapor annealing chamber, we have the ability to monitor and control vapor pressure, solvent concentration within the film, and solvent evaporation rate with unprecedented precision and reliability. Focusing on evaporation, we report on two previously unexplored areas, chamber pressure during solvent evaporation and the flow rate of purging gas aiding the evaporation. We will report our exhaustive results following atomic force microscopy analysis of films exposed to a wide range of pressures and flow rates. Reliably achieving well-ordered films, while occurring within a large section of this parameter space, was correlated with high-flow evaporation rates and low chamber pressures. These results have significant implications on other methods of solvent annealing, including ``jar'' techniques.

  18. Electrical properties of thermally evaporated nickel-dimethylglyoxime thin films

    Science.gov (United States)

    Dakhel, A. A.; Ali-Mohamed Ahmed, Y.

    2005-06-01

    Thin Bis-(dimethylglyoximato)nickel(II) [Ni(DMG)2] films of amorphous and crystalline structures were prepared by vacuum deposition on Si (P) substrates. The films were characterised by X-ray fluorescence and X-ray diffraction. The constructed Al/Ni(DMG)2/Si(P) metal-insulator-semiconductor devices were characterised by the measurement of the gate-voltage dependence of their capacitance and ac conductance, from which the surface states density Dit of insulator/semiconductor interface and the density of the fixed charges in the oxide were determined. The ac electrical conduction and dielectric properties of the Ni(DMG)2-Silicon structure were studied at room temperature. The data of the ac measurements of the annealed films follow the correlated barrier-hopping CBH mode, from which the fundamental absorption bandgap, the minimum hopping distance, and other parameters of the model were determined.

  19. Fabrication of Carbon Nanotube Thin Films by Evaporation-Induced Self-Assembly

    OpenAIRE

    Li, Han

    2015-01-01

    In summary, we have prepared single-wall carbon nanotube (SWNT) thin films by the method of evaporation-induced self-assembly (EISA). Using the scalable two-plate or lens setups, sorts of different film types or patterns of SWNTs has been successfully fabricated directly from the evaporation of solvents and could be precisely controlled by the concentrations of SWNT in ambient conditions. The special geometry of meniscus as the capillary bridge has not only given rise to a much higher efficie...

  20. Chloroform micro-evaporation induced ordered structures of poly(L-lactide) thin films

    DEFF Research Database (Denmark)

    Huang, Shaoyong; Li, Hongfei; Shang, Yingrui

    2013-01-01

    Self-assembly of poly(L-lactide) (PLLA) in thin films induced by chloroform micro-evaporation was investigated by microscopic techniques and X-ray diffraction studies. A film-thickness dependent on highly ordered structures has been derived from disordered films. Ring-banded spherulitic...... and dendritic morphologies with radial periodic variation of thicknesses were formed in dilute solution driven by micro-evaporation of the solvent. Bunched morphologies stacked with a flat-on lozenge-shaped lamellae were created in thinner films. The formation of the concentric ring banded structures...

  1. Analysis of the electrodeposition and surface chemistry of CdTe, CdSe, and CdS thin films through substrate-overlayer surface-enhanced Raman spectroscopy.

    Science.gov (United States)

    Gu, Junsi; Fahrenkrug, Eli; Maldonado, Stephen

    2014-09-02

    The substrate-overlayer approach has been used to acquire surface enhanced Raman spectra (SERS) during and after electrochemical atomic layer deposition (ECALD) of CdSe, CdTe, and CdS thin films. The collected data suggest that SERS measurements performed with off-resonance (i.e. far from the surface plasmonic wavelength of the underlying SERS substrate) laser excitation do not introduce perturbations to the ECALD processes. Spectra acquired in this way afford rapid insight on the quality of the semiconductor film during the course of an ECALD process. For example, SERS data are used to highlight ECALD conditions that yield crystalline CdSe and CdS films. In contrast, SERS measurements with short wavelength laser excitation show evidence of photoelectrochemical effects that were not germane to the intended ECALD process. Using the semiconductor films prepared by ECALD, the substrate-overlayer SERS approach also affords analysis of semiconductor surface adsorbates. Specifically, Raman spectra of benzenethiol adsorbed onto CdSe, CdTe, and CdS films are detailed. Spectral shifts in the vibronic features of adsorbate bonding suggest subtle differences in substrate-adsorbate interactions, highlighting the sensitivity of this methodology.

  2. Y-Ba-Cu-O superconducting thin films by simultaneous or sequential evaporation

    International Nuclear Information System (INIS)

    Mogro-Campero, A.; Hunt, B.D.; Turner, L.G.; Burrell, M.C.; Balz, W.E.

    1988-01-01

    Superconducting thin films of Y-Ba-Cu-O near the 1:2:3 stoichiometry were produced by simultaneous (coevaporation) and sequential (multilayer) evaporation in the same evaporator. The best film obtained on yttria-stabilized zirconia (YSZ) had a superconducting onset temperature of 104 K, a midpoint T/sub c/ of 92 K, and zero resistance at T≤74 K. Stoichiometry was deduced by inductively coupled plasma emission spectroscopy, and elemental depth profiles were obtained by x-ray photoelectron spectroscopy. Film stoichiometry changes only near the film/substrate boundary for films on YSZ. Films on Si/SiO 2 were not superconducting; depth profiling shows severe changes of film composition with depth. A major theme of this work is process reproducibility, which was found to be poor for coevaporation but improved considerably for sequential evaporation

  3. Cooling of a microchannel with thin evaporating liquid film sheared by dry gas flow

    Science.gov (United States)

    Kabova, Yu O.; Kuznetsov, V. V.

    2017-11-01

    A joint motion of thin liquid film and dry gas in a microchannel is investigated numerically at different values of initial concentration of the liquid vapor in the gas phase, taking into account the evaporation process. Major factors affecting the temperature distribution in the liquid and the gas phases are as follows: transfer of heat by liquid and gas flows, heat loses due to evaporation, diffusion heat exchange. Comparisons of the numerical results for the case of the dry gas and for the case of equilibrium concentration of vapor in the gas have been carried out. It is shown that use of dry gas enhances the heat dissipation from the heater. It is found out that not only intense evaporation occurs near the heating areas, but also in both cases vapor condensation takes place below the heater in streamwise direction.

  4. Optical band gap of ZnO thin films deposited by electron beam evaporation

    International Nuclear Information System (INIS)

    Nadeem, M. Y.; Ali, S. L.; Wasiq, M. F.; Rana, A. M.

    2006-01-01

    Optical band gap of ZnO thin films deposited by electron beam evaporation at evaporation rates ranging 5 As/sup -1/ to 15 As /sup -1/ and thickness ranging 1000A to 3000A is presented. Deposited films were annealed at 573K for one and half hour. The variations in the optical band gap were observed and showed decreasing behavior from 3.15 eV, 3.05 eV, from 3.18 eV to 3.10 eV and from 3.19 eV to 3.18 eV for films with respective thickness 1000A, 2000 A, 3000 A on increasing the evaporation rate from 5 As/sup-1/ to As/sup -1/ by keeping thickness constant. (author)

  5. Preparation of anatase TiO2 thin films by vacuum arc plasma evaporation

    International Nuclear Information System (INIS)

    Miyata, Toshihiro; Tsukada, Satoshi; Minami, Tadatsugu

    2006-01-01

    Anatase titanium dioxide (TiO 2 ) thin films with high photocatalytic activity have been prepared with deposition rates as high as 16 nm/min by a newly developed vacuum arc plasma evaporation (VAPE) method using sintered TiO 2 pellets as the source material. Highly transparent TiO 2 thin films prepared at substrate temperatures from room temperature to 400 deg. C exhibited photocatalytic activity, regardless whether oxygen (O 2 ) gas was introduced during the VAPE deposition. The highest photocatalytic activity and photo-induced hydrophilicity were obtained in anatase TiO 2 thin films prepared at 300 deg. C, which correlated to the best crystallinity of the films, as evidenced from X-ray diffraction. In addition, a transparent and conductive anatase TiO 2 thin film with a resistivity of 2.6 x 10 -1 Ω cm was prepared at a substrate temperature of 400 deg. C without the introduction of O 2 gas

  6. Structural and optical properties of CdSe nanosheets

    Science.gov (United States)

    Solanki, Rekha Garg; Rajaram, P.; Arora, Aman

    2018-04-01

    Nanosheets of CdSe have been synthesized using a solvothermal route using citric acid as an additive. It is found that the citric acid effectively controls the structural and optical properties of CdSe nanostructures. XRD studies confirm the formation of hexagonal wurtzite phase of CdSe. The FESEM micrographs show that the obtained CdSe nanocrystals are in the form of very thin sheets (nanosheets). Optical absorption studies as well as Photoluminescence spectra show that the optical gap is around 1.76 eV which is close to the reported bulk value of 1.74 eV. The prepared CdSe nanosheets because of large surface area may be useful for catalytic activities in medicine, biotechnology and environmental chemistry and in biomedical imaging for in vitro detection of a breast cancer cells.

  7. XPS analysis of the activation process in non-evaporable getter thin films

    CERN Document Server

    Lozano, M

    2000-01-01

    The surface activation process of sputter-coated non-evaporable getter (NEG) thin films based on Ti-Zr and Ti-Zr-V alloys has been studied in situ by means of X-ray photoelectron spectroscopy. After exposure of the NEG thin films to ambient air they become reactivated after a thermal treatment in an ultrahigh vacuum. In our case the films are heated up to ~250 degrees C for 2 h in a base pressure of ~10/sup -9/ Torr. (18 refs).

  8. Surface morphology of thin lysozyme films produced by matrix-assisted pulsed laser evaporation (MAPLE)

    DEFF Research Database (Denmark)

    Purice, Andreea; Schou, Jørgen; Pryds, Nini

    2007-01-01

    Thin films of the protein, lysozyme, have been deposited by the matrix-assisted pulsed laser evaporation (MAPLE) technique. Frozen targets of 0.3-1.0 wt.% lysozyme dissolved in ultrapure water were irradiated by laser light at 355 mn with a fluence of 2 J/cm(2). The surface quality of the thin....... The concentration of lysozyme in the ice matrix apparently does not play any significant role for the morphology of the film. The morphology obtained with MAPLE has been compared with results for direct laser irradiation of a pressed lysozyme sample (i.e. pulsed laser deposition (PLD)). (C) 2007 Elsevier B.V. All...

  9. Fabrication of thermally evaporated Al thin film on cylindrical PET monofilament for wearable computing devices

    Science.gov (United States)

    Liu, Yang; Kim, Eunju; Han, Jeong In

    2016-01-01

    During the initial development of wearable computing devices, the conductive fibers of Al thin film on cylindrical PET monofilament were fabricated by thermal evaporation. Their electrical current-voltage characteristics curves were excellent for incorporation into wearable devices such as fiber-based cylindrical capacitors or thin film transistors. Their surfaces were modified by UV exposure and dip coating of acryl or PVP to investigate the surface effect. The conductive fiber with PVP coating showed the best conductivities because the rough surface of the PET substrate transformed into a smooth surface. The conductivities of PET fiber with and without PVP were 6.81 × 103 Ω-1cm-1 and 5.62 × 103 Ω-1cm-1, respectively. In order to understand the deposition process of Al thin film on cylindrical PET, Al thin film on PET fiber was studied using SEM (Scanning Electron Microscope), conductivities and thickness measurements. Hillocks on the surface of conductive PET fibers were observed and investigated by AFM on the surface. Hillocks were formed and grown during Al thermal evaporation because of severe compressive strain and plastic deformation induced by large differences in thermal expansion between PET substrate and Al thin film. From the analysis of hillock size distribution, it turns out that hillocks grew not transversely but longitudinally. [Figure not available: see fulltext.

  10. Growth of thin films of low molecular weight proteins by matrix assisted pulsed laser evaporation (MAPLE)

    DEFF Research Database (Denmark)

    Matei, Andreea; Schou, Jørgen; Constantinescu, C.

    2011-01-01

    Thin films of lysozyme and myoglobin grown by matrix assisted pulsed laser evaporation (MAPLE) from a water ice matrix have been investigated. The deposition rate of these two low molecular weight proteins (lysozyme: 14307 amu and myoglobin: 17083 amu) exhibits a maximum of about 1–2 ng/cm2 per....... The results for lysozyme demonstrate that the fragmentation rate of the proteins during the MAPLE process is not influenced by the pH of the water solution prior to freezing....

  11. Use of thin films obtained by electron beam evaporation as optical wave guide

    International Nuclear Information System (INIS)

    Nobre, S.A.A.; Oliveira, C.A.S. de; Freire, G.F.de O.

    1986-01-01

    Thin films evaporated by electron beam for the fabrication of planar optical waveguides were used. The tested materials were aluminium oxide (Al 2 O 3 ) and tantalum pentoxide (Ta 2 O 5 ). The effect of annealing conditions on the film absorption was investigated for Ta 2 O 5 . The Al 2 O 3 films were characterized by the method of guided modes, in terms of refractive index measurements and film thickness. Atenuation measurements were also carried out. (M.C.K.) [pt

  12. Use of a thin-film evaporator for bitumen coating of radioactive concentrates

    International Nuclear Information System (INIS)

    Lefillatre, G.; Rodier, J.; Hullo, R.; Cudel, Y.; Rodi, L.

    1969-01-01

    Following the development in the laboratory of a process for coating evaporation concentrates with bitumen, a technological study of this coating process has been undertaken. The report describes a pilot installation for the bitumen coating of concentrates, which uses a thin-film evaporator LUWA L 150. The first, inactive series of tests was designed to determine the maximum and optimum capacities of the evaporator by varying the amounts of bitumen and of concentrate, the rotor speed and the thermo-fluid temperature. Two rotors were tested, one of conventional type, the other a model especially designed for high viscosity products. The maximum capacity of evaporation of the apparatus is 72 kg/hr for a heating temperature of 221 deg. C. During normal operation, the evaporator can produce 50 kg/hr of coated product containing 55 to 60 per cent of bitumen (Mexphalte 40/50), the water content of the product remaining under 0.5 per cent. A second series of tests will shortly be carried out on this pilot installation using, in particular, bituminous emulsions containing mainly Mexphalte 40/50 and 80/100. (authors) [fr

  13. Synthesis of CdSe Quantum Dots Using Fusarium oxysporum

    Directory of Open Access Journals (Sweden)

    Takaaki Yamaguchi

    2016-10-01

    Full Text Available CdSe quantum dots are often used in industry as fluorescent materials. In this study, CdSe quantum dots were synthesized using Fusarium oxysporum. The cadmium and selenium concentration, pH, and temperature for the culture of F. oxysporum (Fusarium oxysporum were optimized for the synthesis, and the CdSe quantum dots obtained from the mycelial cells of F. oxysporum were observed by transmission electron microscopy. Ultra-thin sections of F. oxysporum showed that the CdSe quantum dots were precipitated in the intracellular space, indicating that cadmium and selenium ions were incorporated into the cell and that the quantum dots were synthesized with intracellular metabolites. To reveal differences in F. oxysporum metabolism, cell extracts of F. oxysporum, before and after CdSe synthesis, were compared using sodium dodecyl sulfate-polyacrylamide gel electrophoresis (SDS-PAGE. The results suggested that the amount of superoxide dismutase (SOD decreased after CdSe synthesis. Fluorescence microscopy revealed that cytoplasmic superoxide increased significantly after CdSe synthesis. The accumulation of superoxide may increase the expression of various metabolites that play a role in reducing Se4+ to Se2− and inhibit the aggregation of CdSe to make nanoparticles.

  14. Growth and structure of thermally evaporated Bi{sub 2}Te{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rogacheva, E.I., E-mail: rogacheva@kpi.kharkov.ua [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine); Budnik, A.V. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine); Dobrotvorskaya, M.V.; Fedorov, A.G.; Krivonogov, S.I.; Mateychenko, P.V. [Institute for Single Crystals of NAS of Ukraine, 60 Lenin Prospect, Kharkov 61001 (Ukraine); Nashchekina, O.N.; Sipatov, A.Yu. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine)

    2016-08-01

    The growth mechanism, microstructure, and crystal structure of the polycrystalline n-Bi{sub 2}Te{sub 3} thin films with thicknesses d = 15–350 nm, prepared by thermal evaporation in vacuum onto glass substrates, were studied. Bismuth telluride with Te excess was used as the initial material for the thin film preparation. The thin film characterization was performed using X-ray diffraction, X-ray photoelectron spectroscopy, energy-dispersive X-ray spectroscopy, scan electron microscopy, and electron force microscopy. It was established that the chemical composition of the prepared films corresponded rather well to the starting material composition and the films did not contain any phases apart from Bi{sub 2}Te{sub 3}. It was shown that the grain size and the film roughness increased with increasing film thickness. The preferential growth direction changed from [00l] to [015] under increasing d. The X-ray photoelectron spectroscopy studies showed that the thickness of the oxidized surface layer did not exceed 1.5–2.0 nm and practically did not change in the process of aging at room temperature, which is in agreement with the results reported earlier for single crystals. The obtained data show that using simple and inexpensive method of thermal evaporation in vacuum and appropriate technological parameters, one can grow n-Bi{sub 2}Te{sub 3} thin films of a sufficiently high quality. - Highlights: • The polycrystalline n-Bi{sub 2}Te{sub 3} thin films were grown thermal evaporation onto glass. • The growth mechanism and film structure were studied by different structure methods. • The grain size and film roughness increased with increasing film thickness. • The growth direction changes from [00l] to [015] under film thickness increasing. • The oxidized layer thickness (1–2 nm) did not change under aging at room temperature.

  15. Photoluminescence of electron beam evaporated CaS:Bi thin films

    CERN Document Server

    Smet, P F; Poelman, D R; Meirhaeghe, R L V

    2003-01-01

    For the first time, the photoluminescence (PL) of electron beam evaporated CaS:Bi thin films is reported. Luminescent CaS:Bi powder prepared out of aqueous solutions was used as source material. The influence of substrate temperature on the PL and the morphology of thin films is discussed, and an optimum is determined. Substrate temperatures between 200 deg. C and 300 deg. C lead to good quality thin films with sufficient PL intensity. As-deposited thin films show two emission bands, peaking at 450 and 530 nm. Upon annealing the emission intensity increases, and annealing at 800 deg. C is sufficient to obtain a homogeneously blue emitting thin film (CIE colour coordinates (0.17; 0.12)), thanks to a single remaining emission band at 450 nm. The influence of ambient temperature on the PL of CaS:Bi powder and thin films was also investigated and it was found that CaS:Bi thin films show a favourable thermal quenching behaviour near room temperature.

  16. Development of novel control system to grow ZnO thin films by reactive evaporation

    Directory of Open Access Journals (Sweden)

    Gerardo Gordillo

    2016-07-01

    Full Text Available This work describes a novel system implemented to grow ZnO thin films by plasma assisted reactive evaporation with adequate properties to be used in the fabrication of photovoltaic devices with different architectures. The innovative aspect includes both an improved design of the reactor used to activate the chemical reaction that leads to the formation of the ZnO compound as an electronic system developed using the virtual instrumentation concept. ZnO thin films with excellent opto-electrical properties were prepared in a reproducible way, controlling the deposition system through a virtual instrument (VI with facilities to control the amount of evaporated zinc involved in the process that gives rise to the formation of ZnO, by means of the incorporation of PID (proportional integral differential and PWM (pulse width modulation control algorithms. The effectiveness and reliability of the developed system was verified by obtaining with good reproducibility thin films of n+-ZnO and i-ZnO grown sequentially in situ with thicknesses and resistivities suitable for use as window layers in chalcopyrite based thin film solar cells.

  17. Electrical transport properties of thermally evaporated phthalocyanine (H 2Pc) thin films

    Science.gov (United States)

    El-Nahass, M. M.; Farid, A. M.; Attia, A. A.; Ali, H. A. M.

    2006-08-01

    Thin films of H 2Pc of various thicknesses have been deposited onto glass substrates using thermal evaporation technique at room temperature. The dark electrical resistivity measurements were carried out at different temperatures in the range 298-473 K. An estimation of mean free path ( lo) of charge carriers in H 2Pc thin films was attempted. Measurements of thermoelectric power confirm that H 2Pc thin films behave as a p-type semiconductor. The current density-voltage characteristics of Au/H 2Pc/Au at room temperature showed ohmic conduction mechanism at low voltages. At higher voltages the space-charge-limited conduction (SCLC) accompanied by an exponential trap distribution was dominant. The temperature dependence of current density allows the determination of some essential parameters such as the hole mobility ( μh), the total trap concentration ( Nt), the characteristic temperature ( Tt) and the trap density P( E).

  18. Characterization of nanostructured ZnO thin films deposited through vacuum evaporation

    Directory of Open Access Journals (Sweden)

    Jose Alberto Alvarado

    2015-04-01

    Full Text Available This work presents a novel technique to deposit ZnO thin films through a metal vacuum evaporation technique using colloidal nanoparticles (average size of 30 nm, which were synthesized by our research group, as source. These thin films had a thickness between 45 and 123 nm as measured by profilometry. XRD patterns of the deposited thin films were obtained. According to the HRSEM micrographs worm-shaped nanostructures are observed in samples annealed at 600 °C and this characteristic disappears as the annealing temperature increases. The films obtained were annealed from 25 to 1000 °C, showing a gradual increase in transmittance spectra up to 85%. The optical band gaps obtained for these films are about 3.22 eV. The PL measurement shows an emission in the red and in the violet region and there is a correlation with the annealing process.

  19. Structural, optical, and photoluminescence characterization of electron beam evaporated ZnS/CdSe nanoparticles thin films

    Science.gov (United States)

    Mohamed, S. H.; Ali, H. M.

    2011-01-01

    Structural, optical, and photoluminescence investigations of ZnS capped with CdSe films prepared by electron beam evaporation are presented. X-ray diffraction analysis revealed that the ZnS/CdSe nanoparticles films contain cubic cadmium selenide and hexagonal zinc sulfide crystals and the ZnS grain sizes increased with increasing ZnS thickness. The refractive index was evaluated in terms of envelope method, which has been suggested by Swanepoel in the transparent region. The refractive index values were found to increase with increasing ZnS thickness. However, the optical band gap and the extinction coefficient were decreased with increasing ZnS thickness. Photoluminescence (PL) investigations revealed the presence of two broad emission bands. The ZnS thickness significantly influenced the PL intensities.

  20. Plasma-assisted co-evaporation of {beta}-indium sulfide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kosaraju, Sreenivas; Marino, Joseph A.; Harvey, John A.; Wolden, Colin A. [Department of Chemical Engineering, Colorado School of Mines, Golden, CO 80401 (United States)

    2006-05-05

    This paper describes the development of plasma-assisted co-evaporation (PACE) for the formation of {beta}-In{sub 2}S{sub 3} thin films. Indium was supplied by conventional thermal evaporation, while the chalcogen gas precursor (H{sub 2}S) was activated using an inductively coupled plasma (ICP) source. Using a combination of optical emission spectroscopy and mass spectrometry it was shown that the ICP effectively dissociated H{sub 2}S, producing atomic sulfur. Transport modeling was used to quantify the flux distributions of the co-evaporated metal and the plasma-generated species impinging the substrate. Model predictions were validated by measurements of deposition rate and film properties. Substantial improvements in both materials utilization and substrate temperature reduction were realized with respect to conventional co-evaporation. {beta}-In{sub 2}S{sub 3} was formed as low as 100{sup o}C and it was observed that quality was a strong function of S/In ratio. The grain size decreased and the optical band gap increased as the substrate temperature was reduced. (author)

  1. Modelling the evaporation of thin films of colloidal suspensions using dynamical density functional theory

    Energy Technology Data Exchange (ETDEWEB)

    Robbins, M J; Archer, A J; Thiele, U [Department of Mathematical Sciences, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2011-10-19

    Recent experiments have shown that various structures may be formed during the evaporative dewetting of thin films of colloidal suspensions. Nanoparticle deposits of strongly branched 'flower-like', labyrinthine and network structures are observed. They are caused by the different transport processes and the rich phase behaviour of the system. We develop a model for the system, based on a dynamical density functional theory, which reproduces these structures. The model is employed to determine the influences of the solvent evaporation and of the diffusion of the colloidal particles and of the liquid over the surface. Finally, we investigate the conditions needed for 'liquid-particle' phase separation to occur and discuss its effect on the self-organized nanostructures. (paper)

  2. Comparative study on Pulsed Laser Deposition and Matrix Assisted Pulsed Laser Evaporation of urease thin films

    International Nuclear Information System (INIS)

    Smausz, Tomi; Megyeri, Gabor; Kekesi, Renata; Vass, Csaba; Gyoergy, Eniko; Sima, Felix; Mihailescu, Ion N.; Hopp, Bela

    2009-01-01

    Urease thin films were produced by Matrix Assisted Pulsed Laser Evaporation (MAPLE) and Pulsed Laser Deposition from two types of targets: frozen water solutions of urease with different concentrations (1-10% m/v) and pure urease pellets. The fluence of the ablating KrF excimer laser was varied between 300 and 2200 mJ/cm 2 . Fourier transform infrared spectra of the deposited films showed no difference as compared to the original urease. Morphologic studies proved that the films consist of a smooth 'base' layer with embedded micrometer-sized droplets. Absorption-coefficient measurements contradicted the traditional 'absorptive matrix' model for MAPLE deposition. The laser energy was absorbed by urease clusters leading to a local heating-up and evaporation of the frozen matrix from the uppermost layer accompanied by the release of dissolved urease molecules. Significant enzymatic activity of urease was preserved only during matrix assisted transfer.

  3. Growth of thin fullerene films by matrix assisted pulsed laser evaporation

    DEFF Research Database (Denmark)

    Canulescu, Stela; Schou, Jørgen; Fæster, Søren

    C60 fullerene thin films of average thickness of more than 100 nm on silicon substrates can be produced in vacuum by matrix-assisted pulsed laser evaporation (MAPLE). A 355 nm Nd:YAG laser was directed onto a frozen target of anisole with a concentration of 0.67 wt% C60. At laser fluences below 1.......5 J/cm2 the dominant fraction of the film molecules are C60 transferred to the substrate without any fragmentation. For high fluences high-resolution SEM images of MAPLE deposited films reveal large circular features on the surface with high amount of material concentrated at edges. These features......, observed over a wide range of laser fluences, are caused by ejection of large matrix-fullerene liquid droplets into the gas-phase and subsequent deposition. At similar laser energies, but using an unfocused laser beam, MAPLE favours evaporation of matrix and organic molecules, resulting in films...

  4. Matrix Assisted Pulsed Laser Evaporation for growth of fullerene thin films

    DEFF Research Database (Denmark)

    Canulescu, Stela; Schou, Jørgen; Fæster Nielsen, Søren

    C60 fullerene thin films of average thickness of more than 100 nm can be produced in vacuum by matrix-assisted pulsed laser evaporation (MAPLE). A 355 nm Nd:YAG laser was directed onto a frozen target of anisole with a concentration of 0.67 wt% C60. At laser fluences below 1.5 J/cm2, a dominant...... fraction of the film molecules are C60 transferred to the substrate without any fragmentation. Highresolution SEM images of MAPLE deposited films reveal large circular droplets on the surface with high amount of material concentrated at edges (Fig. 1A). These features, observed over a wide range of laser...... fluences, are caused by ejection of large matrix-fullerene liquid droplets into the gas-phase and subsequent deposition. At similar laser energies, but using an unfocused laser beam, MAPLE favours evaporation of matrix and organic molecules, resulting in production of films with smooth surfaces and minimal...

  5. The preparation of Nb3Ge thin film superconductors in a UHV evaporation and sputter device

    International Nuclear Information System (INIS)

    Krevet, B.; Schauer, W.; Wuechner, F.

    1978-10-01

    Thin film techniques like evaporation or sputtering are remarkbly suitable to vary the metallurgical and physical properties of superconductors in a wide range. In the case of the A15-compound Nb 3 Ge only these preparation techniques allow us to produce a metastable pure phase in stoichiometric composition and to study its superconducting properties. The presen report describes two UHV-plants to produce superconducting films by multisource coevaporation and cosputtering. Of special importance are the constancy, monitoring and control of the evaporation rate, and the thermalization of the sputter components on the other hand. The experimental methods used are explained in detail and discussed together with the results of Nb 3 Ge films. With the preparation parameters suitably chosen both techniques allow to prepare reproducibly Nb 3 Ge films with 21 K transition temperature (onset); under optimized conditions Tc values up to 22.3 K have been reached. (orig.) [de

  6. Modelling approaches to the dewetting of evaporating thin films of nanoparticle suspensions

    International Nuclear Information System (INIS)

    Thiele, U; Vancea, I; Archer, A J; Robbins, M J; Frastia, L; Stannard, A; Pauliac-Vaujour, E; Martin, C P; Blunt, M O; Moriarty, P J

    2009-01-01

    We review recent experiments on dewetting thin films of evaporating colloidal nanoparticle suspensions (nanofluids) and discuss several theoretical approaches to describe the ongoing processes including coupled transport and phase changes. These approaches range from microscopic discrete stochastic theories to mesoscopic continuous deterministic descriptions. In particular, we describe (i) a microscopic kinetic Monte Carlo model, (ii) a dynamical density functional theory and (iii) a hydrodynamic thin film model. Models (i) and (ii) are employed to discuss the formation of polygonal networks, spinodal and branched structures resulting from the dewetting of an ultrathin 'postcursor film' that remains behind a mesoscopic dewetting front. We highlight, in particular, the presence of a transverse instability in the evaporative dewetting front, which results in highly branched fingering structures. The subtle interplay of decomposition in the film and contact line motion is discussed. Finally, we discuss a simple thin film model (iii) of the hydrodynamics on the mesoscale. We employ coupled evolution equations for the film thickness profile and mean particle concentration. The model is used to discuss the self-pinning and depinning of a contact line related to the 'coffee-stain' effect. In the course of the review we discuss the advantages and limitations of the different theories, as well as possible future developments and extensions.

  7. Layered double hydroxides/polymer thin films grown by matrix assisted pulsed laser evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Birjega, R.; Matei, A.; Mitu, B.; Ionita, M.D.; Filipescu, M.; Stokker-Cheregi, F.; Luculescu, C.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest–Magurele (Romania); Zavoianu, R.; Pavel, O.D. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest (Romania); Corobea, M.C. [National R. and S. Institute for Chemistry and Petrochemistry, ICECHIM, 202 Splaiul Independentei Str., CP-35-274, 060021, Bucharest (Romania)

    2013-09-30

    Due to their highly tunable properties, layered double hydroxides (LDHs) are an emerging class of the favorably layered crystals used for the preparation of multifunctional polymer/layered crystal nanocomposites. In contrast to cationic clay materials with negatively charge layers, LDHs are the only host lattices with positively charged layers (brucite-like), with interlayer exchangeable anions and intercalated water. In this work, the deposition of thin films of Mg and Al based LDH/polymers nanocomposites by laser techniques is reported. Matrix assisted pulsed laser evaporation was the method used for thin films deposition. The Mg–Al LDHs capability to act as a host for polymers and to produce hybrid LDH/polymer films has been investigated. Polyethylene glycol with different molecular mass compositions and ethylene glycol were used as polymers. The structure and surface morphology of the deposited LDH/polymers films were examined by X-ray diffraction, Fourier transform infra-red spectroscopy, atomic force microscopy and scanning electron microscopy. - Highlights: • Hybrid composites deposited by matrix assisted pulsed laser evaporation (MAPLE). • Mg–Al layered double hydroxides (LDH) and polyethylene glycol (PEG) are used. • Mixtures of PEG1450 and LDH were deposited by MAPLE. • Deposited thin films preserve the properties of the starting material. • The film wettability can be controlled by the amount of PEG.

  8. Thin films of preparation SnOx by evaporation and pulverization reactive in vapor phase

    International Nuclear Information System (INIS)

    Solis, J.; Estrada, W.; Soares, M.; Schreiner, W.

    1993-01-01

    In this work we obtained SnO x thin films by reactive evaporation. The structure and composition of the films were characterized by x-ray diffraction and Moessbauer spectroscopy. The samples as deposited present different kind of microstructures depending on the parameters deposition, such as substrate temperature and oxygen pressure. In general the samples present three pushes: Sn, SnO and SnO 2 . When the samples are subjected to heat treatment, the as deposited SnO x finally converts to SnO 2 . (authors) 10 refs., 4 figs

  9. Improved Adhesion of Gold Thin Films Evaporated on Polymer Resin: Applications for Sensing Surfaces and MEMS

    Directory of Open Access Journals (Sweden)

    Behrang Moazzez

    2013-05-01

    Full Text Available We present and analyze a method to improve the morphology and mechanical properties of gold thin films for use in optical sensors or other settings where good adhesion of gold to a substrate is of importance and where controlled topography/roughness is key. To improve the adhesion of thermally evaporated gold thin films, we introduce a gold deposition step on SU-8 photoresist prior to UV exposure but after the pre-bake step of SU-8 processing. Shrinkage and distribution of residual stresses, which occur during cross-linking of the SU-8 polymer layer in the post-exposure baking step, are responsible for the higher adhesion of the top gold film to the post-deposition cured SU-8 sublayer. The SU-8 underlayer can also be used to tune the resulting gold film morphology. Our promoter-free protocol is easily integrated with existing sensor microfabrication processes.

  10. Functionalized porphyrin conjugate thin films deposited by matrix assisted pulsed laser evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Iordache, S. [University of Bucharest, 3Nano-SAE Research Center, PO Box MG-38, Bucharest-Magurele (Romania); Cristescu, R., E-mail: rodica.cristescu@inflpr.ro [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, P.O. Box MG-36, Bucharest-Magurele (Romania); Popescu, A.C.; Popescu, C.E.; Dorcioman, G.; Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, P.O. Box MG-36, Bucharest-Magurele (Romania); Ciucu, A.A. [University of Bucharest, Faculty of Chemistry, Bucharest (Romania); Balan, A.; Stamatin, I. [University of Bucharest, 3Nano-SAE Research Center, PO Box MG-38, Bucharest-Magurele (Romania); Fagadar-Cosma, E. [Institute of Chemistry Timisoara of Romanian Academy, M. Viteazul Ave. 24, 300223-Timisoara (Romania); Chrisey, D.B. [Tulane University, Departments of Physics and Biomedical Engineering, New Orleans, LA 70118 (United States)

    2013-08-01

    We report on the deposition of nanostructured porphyrin-base, 5(4-carboxyphenyl)-10,15,20-tris(4-phenoxyphenyl)-porphyrin thin films by matrix assisted pulsed laser evaporation onto silicon substrates with screen-printed electrodes. AFM investigations have shown that at 400 mJ/cm{sup 2} fluence a topographical transition takes place from the platelet-like stacking porphyrin-based nanostructures in a perpendicular arrangement to a quasi-parallel one both relative to the substrate surface. Raman spectroscopy has shown that the chemical structure of the deposited thin films is preserved for fluences within the range of 200–300 mJ/cm{sup 2}. Cyclic voltammograms have demonstrated that the free porphyrin is appropriate as a single mediator for glucose in a specific case of screen-printed electrodes, suggesting potential for designing a new class of biosensors.

  11. Characterization of ethylcellulose and hydroxypropyl methylcellulose thin films deposited by matrix-assisted pulsed laser evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Palla-Papavlu, A., E-mail: apalla@nipne.ro [National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, Magurele, RO-077125 Bucharest (Romania); Rusen, L.; Dinca, V.; Filipescu, M. [National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, Magurele, RO-077125 Bucharest (Romania); Lippert, T. [Paul Scherrer Institut, General Energy Research Department, 5232 Villigen PSI (Switzerland); Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, Magurele, RO-077125 Bucharest (Romania)

    2014-05-01

    In this study is reported the deposition of hydroxypropyl methylcellulose (HPMC) and ethylcellulose (EC) by matrix-assisted pulsed laser evaporation (MAPLE). Both HPMC and EC were deposited on silicon substrates using a Nd:YAG laser (266 nm, 5 ns laser pulse and 10 Hz repetition rate) and then characterized by atomic force microscopy and Fourier transform infrared spectroscopy. It was found that for laser fluences up to 450 mJ/cm{sup 2} the structure of the deposited HPMC and EC polymer in the thin film resembles to the bulk. Morphological investigations reveal island features on the surface of the EC thin films, and pores onto the HPMC polymer films. The obtained results indicate that MAPLE may be an alternative technique for the fabrication of new systems with desired drug release profile.

  12. Characterization of ethylcellulose and hydroxypropyl methylcellulose thin films deposited by matrix-assisted pulsed laser evaporation

    Science.gov (United States)

    Palla-Papavlu, A.; Rusen, L.; Dinca, V.; Filipescu, M.; Lippert, T.; Dinescu, M.

    2014-05-01

    In this study is reported the deposition of hydroxypropyl methylcellulose (HPMC) and ethylcellulose (EC) by matrix-assisted pulsed laser evaporation (MAPLE). Both HPMC and EC were deposited on silicon substrates using a Nd:YAG laser (266 nm, 5 ns laser pulse and 10 Hz repetition rate) and then characterized by atomic force microscopy and Fourier transform infrared spectroscopy. It was found that for laser fluences up to 450 mJ/cm2 the structure of the deposited HPMC and EC polymer in the thin film resembles to the bulk. Morphological investigations reveal island features on the surface of the EC thin films, and pores onto the HPMC polymer films. The obtained results indicate that MAPLE may be an alternative technique for the fabrication of new systems with desired drug release profile.

  13. The role of ultra-fast solvent evaporation on the directed self-assembly of block polymer thin films

    Science.gov (United States)

    Drapes, Chloe; Nelson, G.; Grant, M.; Wong, J.; Baruth, A.

    The directed self-assembly of nano-structures in block polymer thin films viasolvent vapor annealing is complicated by several factors, including evaporation rate. Solvent vapor annealing exposes a disordered film to solvent(s) in the vapor phase, increasing mobility and tuning surface energy, with the intention of producing an ordered structure. Recent theoretical predictions reveal the solvent evaporation affects the resultant nano-structuring. In a competition between phase separation and kinetic trapping during drying, faster solvent removal can enhance the propagation of a given morphology into the bulk of the thin film down to the substrate. Recent construction of a purpose-built, computer controlled solvent vapor annealing chamber provides control over forced solvent evaporation down to 15 ms. This is accomplished using pneumatically actuated nitrogen flow into and out of the chamber. Furthermore, in situ spectral reflectance, with 10 ms temporal resolution, monitors the swelling and evaporation. Presently, cylinder-forming polystyrene-block-polylactide thin films were swollen with 40% (by volume) tetrahydrofuran, followed by immediate evaporation under a variety of designed conditions. This includes various evaporation times, ranging from 15 ms to several seconds, and four unique rate trajectories, including linear, exponential, and combinations. Atomic force microscopy reveals specific surface, free and substrate, morphologies of the resultant films, dependent on specific evaporation conditions. Funded by the Clare Boothe Luce Foundation and Nebraska EPSCoR.

  14. Cu2ZnSnS4 thin films grown by flash evaporation and subsequent annealing in Ar atmosphere

    International Nuclear Information System (INIS)

    Caballero, R.; Izquierdo-Roca, V.; Merino, J.M.; Friedrich, E.J.; Climent-Font, A.; Saucedo, E.; 2UB, Departament d'Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, E-08028 Barcelona (Spain))" data-affiliation=" (IREC, Catalonia Institute for Energy Research, C. Jardins de les Dones de Negre 1, Sant Adriá del Besòs, E-08930 Barcelona (Spain); IN2UB, Departament d'Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, E-08028 Barcelona (Spain))" >Pérez-Rodríguez, A.; León, M.

    2013-01-01

    A study of Cu 2 ZnSnS 4 thin films grown by flash evaporation and subsequently annealed in Ar atmosphere has been carried out. Prior to thin film deposition, Cu 2 ZnSnS 4 bulk compounds with stoichiometric and Zn-rich compositions were synthesized as evaporation sources. The characteristics of the bulk compounds and thin films were investigated by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and elastic back scattering. Cu 2 ZnSnS 4 deposited films contain lower concentrations of Zn than the bulk compounds used as evaporation sources, which is related to a preferential Zn re-evaporation during the deposition process. The desired kesterite composition for solar cell applications was achieved by using a Zn-rich compound as the evaporation source plus a thermal treatment at 620 °C in Ar atmosphere. - Highlights: ► Cu 2 ZnSnS 4 (CZTS) thin films by flash evaporation + annealing in Ar atmosphere ► Difficulty of growing a single phase kesterite material ► X-ray diffraction and Raman spectroscopy to identify the different phases ► Importance of the starting film composition to get the desired CZTS material ► Annealing treatment to obtain the optimum material to be used for CZTS solar cells

  15. Uniform Thin Films of CdSe and CdSe(ZnS) Core(shell) Quantum Dots by Sol-Gel Assembly: Enabling Photoelectrochemical Characterization and Electronic Applications

    Science.gov (United States)

    Korala, Lasantha; Wang, Zhijie; Liu, Yi; Maldonado, Stephen; Brock, Stephanie L.

    2013-01-01

    Optoelectronic properties of quantum dot (QD) films are limited by (1) poor interfacial chemistry and (2) non-radiative recombination due to surface traps. To address these performance issues, sol-gel methods are applied to fabricate thin films of CdSe and core(shell) CdSe(ZnS) QDs. High-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) imaging with chemical analysis confirms that the surface of the QDs in the sol-gel thin films are chalcogen-rich, consistent with an oxidative-induced gelation mechanism in which connectivity is achieved by formation of dichalcogenide covalent linkages between particles. The ligand removal and assembly process is probed by thermogravimetric, spectroscopic and microscopic studies. Further enhancement of inter-particle coupling via mild thermal annealing, which removes residual ligands and reinforces QD connectivity, results in QD sol-gel thin films with superior charge transport properties, as shown by a dramatic enhancement of electrochemical photocurrent under white light illumination relative to thin films composed of ligand-capped QDs. A more than 2-fold enhancement in photocurrent, and a further increase in photovoltage can be achieved by passivation of surface defects via overcoating with a thin ZnS shell. The ability to tune interfacial and surface characteristics for the optimization of photophysical properties suggests that the sol-gel approach may enable formation of QD thin films suitable for a range of optoelectronic applications. PMID:23350924

  16. Numerical study of heat and mass transfer during evaporation of a thin liquid film

    Directory of Open Access Journals (Sweden)

    Oubella M’hand

    2015-01-01

    Full Text Available A numerical study of mixed convection heat and mass transfer with film evaporation in a vertical channel is developed. The emphasis is focused on the effects of vaporization of three different liquid films having widely different properties, along the isothermal and wetted walls on the heat and mass transfer rates in the channel. The induced laminar downward flow is a mixture of blowing dry air and vapour of water, methanol or acetone, assumed as ideal gases. A two-dimensional steady state and elliptical flow model, connected with variable thermo-physical properties, is used and the phase change problem is based on thin liquid film assumptions. The governing equations of the model are solved by a finite volume method and the velocity-pressure fields are linked by SIMPLE algorithm. The numerical results, including the velocity, temperature and concentration profiles, as well as axial variations of Nusselt numbers, Sherwood number and dimensionless film evaporation rate are presented for two values of inlet temperature and Reynolds number. It was found that lower the inlet temperature and Re, the higher the induced flows cooling with respect of most volatile film. The better mass transfer rates related with film evaporation are found for a system with low mass diffusion coefficient.

  17. Tungsten oxide thin films grown by thermal evaporation with high resistance to leaching

    Energy Technology Data Exchange (ETDEWEB)

    Correa, Diogo S. [Universidade Federal de Pelotas (UFPel), RS (Brazil). Centro de Ciencias Quimicas, Farmaceuticas e de Alimentos; Pazinato, Julia C.O.; Freitas, Mauricio A. de; Radtke, Claudio; Garcia, Irene T.S., E-mail: irene@iq.ufrgs.br [Universidade Federal do Rio Grande do Sul (UFRGS), Porto Alegre, RS (Brazil). Instituto de Quimica; Dorneles, Lucio S. [Universidade Federal de Santa Maria (UFSM), RS (Brazil). Centro de Ciencias Naturais e Exatas

    2014-05-15

    Tungsten oxides show different stoichiometries, crystal lattices and morphologies. These characteristics are important mainly when they are used as photocatalysts. In this work tungsten oxide thin films were obtained by thermal evaporation on (100) silicon substrates covered with gold and heated at 350 and 600 °C, with different deposition times. The stoichiometry of the films, morphology, crystal structure and resistance to leaching were characterized through X-ray photoelectron spectroscopy, micro-Raman spectroscopy, scanning and transmission electron microscopy, X-ray diffractometry, Rutherford backscattering spectrometry and O{sup 16} (α,α')O{sup 16} resonant nuclear reaction. Films obtained at higher temperatures show well-defined spherical nanometric structure; they are composed of WO{sub 3.1} and the presence of hydrated tungsten oxide was also observed. The major crystal structure observed is the hexagonal. Thin films obtained through thermal evaporation present resistance to leaching in aqueous media and excellent performance as photocatalysts, evaluated through the degradation of the methyl orange dye. (author)

  18. Preparation of anatase TiO{sub 2} thin films by vacuum arc plasma evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Miyata, Toshihiro [Optoelectronic Device System R and D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 (Japan)]. E-mail: tmiyata@neptune.kanazawa-it.ac.jp; Tsukada, Satoshi [Optoelectronic Device System R and D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 (Japan); Minami, Tadatsugu [Optoelectronic Device System R and D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 (Japan)

    2006-02-01

    Anatase titanium dioxide (TiO{sub 2}) thin films with high photocatalytic activity have been prepared with deposition rates as high as 16 nm/min by a newly developed vacuum arc plasma evaporation (VAPE) method using sintered TiO{sub 2} pellets as the source material. Highly transparent TiO{sub 2} thin films prepared at substrate temperatures from room temperature to 400 deg. C exhibited photocatalytic activity, regardless whether oxygen (O{sub 2}) gas was introduced during the VAPE deposition. The highest photocatalytic activity and photo-induced hydrophilicity were obtained in anatase TiO{sub 2} thin films prepared at 300 deg. C, which correlated to the best crystallinity of the films, as evidenced from X-ray diffraction. In addition, a transparent and conductive anatase TiO{sub 2} thin film with a resistivity of 2.6 x 10{sup -1} {omega} cm was prepared at a substrate temperature of 400 deg. C without the introduction of O{sub 2} gas.

  19. Evaporation dynamics of a sessile droplet on glass surfaces with fluoropolymer coatings: focusing on the final stage of thin droplet evaporation.

    Science.gov (United States)

    Gatapova, Elizaveta Ya; Shonina, Anna M; Safonov, Alexey I; Sulyaeva, Veronica S; Kabov, Oleg A

    2018-03-07

    The evaporation dynamics of a water droplet with an initial volume of 2 μl from glass surfaces with fluoropolymer coatings are investigated using the shadow technique and an optical microscope. The droplet profile for a contact angle of less than 5° is constructed using an image-analyzing interference technique, and evaporation dynamics are investigated at the final stage. We coated the glass slides with a thin film of a fluoropolymer by the hot-wire chemical vapor deposition method at different deposition modes depending on the deposition pressure and the temperature of the activating wire. The resulting surfaces have different structures affecting the wetting properties. Droplet evaporation from a constant contact radius mode in the early stage of evaporation was found followed by the mode where both contact angle and contact radius simultaneously vary in time (final stage) regardless of wettability of the coated surfaces. We found that depinning occurs at small contact angles of 2.2-4.7° for all samples, which are smaller than the measured receding contact angles. This is explained by imbibition of the liquid into the developed surface of the "soft" coating that leads to formation of thin droplets completely wetting the surface. The final stage, which is little discussed in the literature, is also recorded. We have singled out a substage where the contact line velocity is abruptly increasing for all coated and uncoated surfaces. The critical droplet height corresponding to the transition to this substage is about 2 μm with R/h = 107. The duration of this substage is the same for all coated and uncoated surfaces. Droplets observed at this substage for all the tested surfaces are axisymmetric. The specific evaporation rate clearly demonstrates an abrupt increase at the final substage of the droplet evaporation. The classical R 2 law is justified for the complete wetting situation where the droplet is disappearing in an axisymmetric manner.

  20. Realization of PbS thin films by reactive evaporation technique for possible opto-electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    A, Abhilash, E-mail: abhiltp@cusat.ac.in; Nair, Aparna S.; S, Rajasree; E, Hiba Rahman; Pradeep, B. [Solid State Physics Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi-682022 (India)

    2015-06-24

    Stoichiometric Lead sulphide (PbS) thin films were successfully prepared on glass substrates by reactive evaporation technique. Elemental evaporation of lead and sulphur taken in different sources onto substrates held at temperature of 400±5K employed in the present study. The structural as well as compositional studies compromises compound formation. Electrical transport properties and optical co-efficient were evaluated from appropriate characterization techniques.

  1. Electron-gun Evaporation of Cu and In thin Films as Precursors for CuInSe, Formation

    International Nuclear Information System (INIS)

    Caballero, R.; Guillen, C.

    2001-01-01

    In the present invigorations CuInSe, is obtained in two stages: sequential evaporation of Cu and In using an electron gun evaporator on substrates up to 30 x 30 cm 2 , and a posterior selenization of the deposited films. The study is mainly focused on the first stage, in where the control of the different evaporation parameters of the metal precursors is essential. Electrical measurements are carried out, and also the topography and the thickness are determined with the object of studying the properties and homogeneity of the thin films. (Author) 19 refs

  2. Preparation of YBa2Cu3O7-δ epitaxial thin films by pulsed ion-beam evaporation

    International Nuclear Information System (INIS)

    Sorasit, S.; Yoshida, G.; Suzuki, T.; Suematsu, H.; Jiang, W.; Yatsui, K.

    2001-01-01

    Thin films of YBa 2 Cu 3 O 7-δ (Y-123) grown epitaxially have been successfully deposited by ion-beam evaporation (IBE). The c-axis oriented YBa 2 Cu 3 O 7-δ thin films were successfully deposited on MgO and SrTiO 3 substrates. The Y-123 thin films which were prepared on the SrTiO 3 substrates were confirmed to be epitaxially grown, by X-ray diffraction analysis. The instantaneous deposition rate of the Y-123 thin films was estimated as high as 4 mm/s. (author)

  3. Comparison of structural properties of thermally evaporated CdTe thin films on different substrates

    International Nuclear Information System (INIS)

    Tariq, G.H.; Anis-ur-Rehman, M.

    2011-01-01

    The direct energy band gap in the range of 1.5 eV and the high absorption coefficient (105 cm/sup -1/) makes Cadmium Telluride (CdTe) a suitable material for fabrication of thin film solar cells. Thin film solar cells based on CdTe (1 cm area) achieved efficiency of 15.6% on a laboratory scale. CdTe thin films were deposited by thermal evaporation technique under vacuum 2 X 10/sup -5/mbar on glass and stainless steel (SS) substrates. During deposition substrates temperature was kept same at 200 deg. C for all samples. The structural properties were determined by the X-ray Diffraction (XRD) patterns. All samples exhibit polycrystalline nature. Dependence of different structural parameters such as lattice parameter, micro strain, and grain size and dislocation density on thickness was studied. Also the influence of the different substrates on these parameters was investigated. The analysis showed that the preferential orientation of films was dependent on the substrate type. (author)

  4. Electrical and Optical Properties of GeSi−:H Thin Films Prepared by Thermal Evaporation Method

    Directory of Open Access Journals (Sweden)

    A. A. J. Al-Douri

    2010-01-01

    Full Text Available Thin a-GeSi1−:H films were grown successfully by fabrication of designated ingot followed by evaporation onto glass slides. A range of growth conditions, Ge contents, dopant concentration (Al and As, and substrate temperature, were employed. Stoichiometry of the thin films composition was confirmed using standard surface techniques. The structure of all films was amorphous. Film composition and deposition parameters were investigated for their bearing on film electrical and optical properties. More than one transport mechanism is indicated. It was observed that increasing substrate temperature, Ge contents, and dopant concentration lead to a decrease in the optical energy gap of those films. The role of the deposition conditions on values of the optical constants was determined. Accordingly, models of the density of states for the Ge0.5Si0.5:H thin films as pure, doped with 3.5% of Al (p-type and that doped with 3.5% As (n-type, were proposed.

  5. Preparation, electrical and optical properties of evaporated thin films of CuPbI3

    International Nuclear Information System (INIS)

    Kuku, T.A.; Azi, S.O.

    1995-10-01

    Thin films of CuPbl 3 have been prepared by a vacuum evaporation process. X-ray analysis gives structural parameters in consonance with the bulk powder form of the material. The film however preferring a growth in the [002] direction. Electrical conductivity indicates an activated process with two activation energies being 0.45 eV for T ≤ 373 K, and 0.6 eV for T ≥ 373 K. Both are interpreted to be due to the transport of anionic carriers in the phases existing below and beyond 373 K respectively. Optical characterization reveals a material with high absorption coefficient, with α ≥ 10 4 cm -1 . The material is characterized by a direct absorption with the direct edge at 1.64 eV. (author). 13 refs, 5 figs

  6. The anomalous low temperature resistivity of thermally evaporated α-Mn thin film

    International Nuclear Information System (INIS)

    Ampong, F.K.; Boakye, F.; Nkum, R.K.

    2010-01-01

    Electrical resistivity measurements have been carried out on thermally evaporated α-Mn thin film between 300 and 1.4 K using the van der Pauw four probe technique. The film was grown on a glass substrate held at a temperature of 373 K, in an ambient pressure of 5x10 -6 Torr. The results show a resistance minimum, a notable characteristic of α-Mn but at a (rather high) temperature of 194±1 K. Below the resistivity maximum which corresponds to 70 K, the resistivity drops by only 0.02 μΩm indicating a rather short range magnetic ordering. The low temperature results show a tendency towards saturation of the resistivity as the temperature approaches zero suggesting a Kondo scattering.

  7. The anomalous low temperature resistivity of thermally evaporated alpha-Mn thin film

    Energy Technology Data Exchange (ETDEWEB)

    Ampong, F.K., E-mail: kampxx@yahoo.co [Department of Physics, Kwame Nkrumah University of Science and Technology, Kumasi (Ghana); Boakye, F.; Nkum, R.K. [Department of Physics, Kwame Nkrumah University of Science and Technology, Kumasi (Ghana)

    2010-08-15

    Electrical resistivity measurements have been carried out on thermally evaporated alpha-Mn thin film between 300 and 1.4 K using the van der Pauw four probe technique. The film was grown on a glass substrate held at a temperature of 373 K, in an ambient pressure of 5x10{sup -6} Torr. The results show a resistance minimum, a notable characteristic of alpha-Mn but at a (rather high) temperature of 194+-1 K. Below the resistivity maximum which corresponds to 70 K, the resistivity drops by only 0.02 muOMEGAm indicating a rather short range magnetic ordering. The low temperature results show a tendency towards saturation of the resistivity as the temperature approaches zero suggesting a Kondo scattering.

  8. Annealing behaviour of structural and magnetic properties of evaporated Co thin films

    International Nuclear Information System (INIS)

    Jergel, M; Halahovets, Y; Siffalovic, P; Mat'ko, I; Senderak, R; Majkova, E; Luby, S; Cheshko, I; Protsenko, S

    2009-01-01

    Cobalt thin films of 50 nm nominal thickness were e-beam evaporated on silicon substrates covered with thermal oxide. Two series of independent and cumulative vacuum annealings up to 600 deg. C and 650 deg. C, respectively, were performed. The x-ray diffraction, specular and non-specular x-ray reflectivity and longitudinal magneto-optical Kerr effect measurements were applied to probe the annealing behaviour of the film structure and magnetic properties. A gradual transition from the hexagonal close-packed (hcp) to the face-centred cubic (fcc) structure was observed. Evolution of the in-plane magnetic anisotropy is dominated by residual stresses which relax during the structural transformation. The coercivity follows the stress behaviour in the hcp phase up to 300 deg. C and increases abruptly above 400 deg. C due to improving the magneto-crystalline anisotropy in the growing fcc crystallites and enhanced surface/interface roughness.

  9. Magnetic anisotropy in iron thin films evaporated under ultra-high vacuum

    International Nuclear Information System (INIS)

    Dinhut, J.F.; Eymery, J.P.; Krishnan, R.

    1992-01-01

    α-iron thin films with thickness ranging between 20 and 1500 nm have been evaporated using an electron gun under ultra-high vacuum conditions (5.10 -7 P). The columnar structure observed in cross-sectional TEM is related to the large surface diffusion. From Moessbauer spectra the spin orientation is deduced and found to be influenced by the column axis. Spins can be obtained perpendicularly to the film plane by rotating the substrte during the deposition. The magnetization of the samples is reduced by about 30% and the reduction attributed to the interstitial space which increases with the incident angle. The substrate rotation also decreases Ku( parallel ) by a factor 2 and increases Ku( perpendicular to ). (orig.)

  10. Evaporation characteristics of thin film liquid argon in nano-scale confinement: A molecular dynamics study

    Science.gov (United States)

    Hasan, Mohammad Nasim; Shavik, Sheikh Mohammad; Rabbi, Kazi Fazle; Haque, Mominul

    2016-07-01

    Molecular dynamics simulation has been carried out to explore the evaporation characteristics of thin liquid argon film in nano-scale confinement. The present study has been conducted to realize the nano-scale physics of simultaneous evaporation and condensation inside a confined space for a three phase system with particular emphasis on the effect of surface wetting conditions. The simulation domain consisted of two parallel platinum plates; one at the top and another at the bottom. The fluid comprised of liquid argon film at the bottom plate and vapor argon in between liquid argon and upper plate of the domain. Considering hydrophilic and hydrophobic nature of top and bottom surfaces, two different cases have been investigated: (i) Case A: Both top and bottom surfaces are hydrophilic, (ii) Case B: both top and bottom surfaces are hydrophobic. For all cases, equilibrium molecular dynamics (EMD) was performed to reach equilibrium state at 90 K. Then the lower wall was set to four different temperatures such as 110 K, 120 K, 130 K and 140 K to perform non-equilibrium molecular dynamics (NEMD). The variation of temperature and density as well as the variation of system pressure with respect to time were closely monitored for each case. The heat fluxes normal to top and bottom walls were estimated and discussed to illuminate the effectiveness of heat transfer in both hydrophilic and hydrophobic confinement at various boundary temperatures of the bottom plate.

  11. Solid phase crystallized polycrystalline thin-films on glass from evaporated silicon for photovoltaic applications

    International Nuclear Information System (INIS)

    Song Dengyuan; Inns, Daniel; Straub, Axel; Terry, Mason L.; Campbell, Patrick; Aberle, Armin G.

    2006-01-01

    Polycrystalline silicon (poly-Si) thin-films are made on planar and textured glass substrates by solid phase crystallization (SPC) of in situ doped amorphous silicon (a-Si) deposited by electron-beam evaporation. These materials are referred to by us as EVA materials (SPC of evaporated a-Si). The properties of EVA poly-Si films are characterised by Raman microscopy, transmission electron microscopy, and X-ray diffraction. A narrow and symmetrical Raman peak at a wave number of about 520 cm -1 is observed for all samples, showing that the films are fully crystallized. X-ray diffraction (XRD) reveals that the films are preferentially (111)-oriented. Furthermore, the full width at half maximum of the dominant (111) XRD peaks indicates that the structural quality of the films is affected by the a-Si deposition temperature and the surface morphology of the glass substrates. A-Si deposition at 200 instead of 400 deg. C leads to an enhanced poly-Si grain size. On textured glass, the addition of a SiN barrier layer between the glass and the Si improves the poly-Si material quality. No such effect occurs on planar glass. Mesa-type solar cells are made from these EVA films on planar and textured glass. A strong correlation between the cells' current-voltage characteristics and their crystalline material quality is observed

  12. Influence of Sn incorporation on the properties of CuInS2 thin films grown by vacuum evaporation method

    International Nuclear Information System (INIS)

    Zribi, M.; Rabeh, M. Ben; Brini, R.; Kanzari, M.; Rezig, B.

    2006-01-01

    Structural, morphological and optical properties of Sn-doped CuInS 2 thin films grown by double source thermal evaporation method were studied. Firstly, the films were annealed in vacuum after evaporation from 250 to 500 deg. C for Sn deposition time equal to 3 min. Secondly, the films deposited for several Sn evaporation times were annealed in vacuum after evaporation at 500 deg. C. The X-ray diffraction spectra indicated that polycrystalline Sn-doped CuInS 2 films were obtained and no Sn binary or ternary phases are observed for the Sn evaporation times equal to 5 min. Scanning electron microscopy observation revealed the decrease of the surface crystallinity with increasing the Sn evaporation times and the annealing temperatures. The Sn-doped samples after annealing have bandgap energy of 1.42-1.50 eV. Furthermore, we found that the Sn-doped CuInS 2 thin films exhibit N-type conductivity after annealing

  13. Magnetic field and temperature dependent measurements of hall coefficient in thermal evaporated Tin-Doped Cadmium Oxide Thin films

    International Nuclear Information System (INIS)

    Hamadi, O.; Shakir, N.; Mohammed, F.

    2010-01-01

    CdO:Sn thin films are deposited onto glass substrates by thermal evaporation under vacuum. The studied films are polycrystalline and have an NaCl structure. The Hall effect is studied for films with different thickness as substrates are maintained at different temperatures. The temperature dependence of the Hall mobility is also investigated. (authors)

  14. Substrate bias effect on crystallinity of polycrystalline silicon thin films prepared by pulsed ion-beam evaporation method

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Fazlat; Gunji, Michiharu; Yang, Sung-Chae; Suzuki, Tsuneo; Suematsu, Hisayuki; Jiang, Weihua; Yatsui, Kiyoshi [Nagaoka Univ. of Technology, Extreme Energy-Density Research Inst., Nagaoka, Niigata (Japan)

    2002-06-01

    The deposition of polycrystalline silicon thin films has been tried by a pulsed ion-beam evaporation method, where high crystallinity and deposition rate have been achieved without heating the substrate. The crystallinity and the deposition rate were improved by applying bias voltage to the substrate, where instantaneous substrate heating might have occurred by ion-bombardment. (author)

  15. Substrate bias effect on crystallinity of polycrystalline silicon thin films prepared by pulsed ion-beam evaporation method

    International Nuclear Information System (INIS)

    Ali, Fazlat; Gunji, Michiharu; Yang, Sung-Chae; Suzuki, Tsuneo; Suematsu, Hisayuki; Jiang, Weihua; Yatsui, Kiyoshi

    2002-01-01

    The deposition of polycrystalline silicon thin films has been tried by a pulsed ion-beam evaporation method, where high crystallinity and deposition rate have been achieved without heating the substrate. The crystallinity and the deposition rate were improved by applying bias voltage to the substrate, where instantaneous substrate heating might have occurred by ion-bombardment. (author)

  16. Structural, electrical and magnetic properties of evaporated Ni/Cu and Ni/glass thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nacereddine, C. [Departement de Physique, Universite Ferhat Abbas, Setif 19000 (Algeria); Layadi, A. [Departement de Physique, Universite Ferhat Abbas, Setif 19000 (Algeria)]. E-mail: A_Layadi@yahoo.fr; Guittoum, A. [Centre de Recherche Nucleaire d' Alger (CRNA), Alger 16000 (Algeria); Cherif, S.-M. [Laboratoire PMTM, Institut Galilee, Univeriste Paris 13, Villetaneuse 93340 (France); Chauveau, T. [Laboratoire PMTM, Institut Galilee, Univeriste Paris 13, Villetaneuse 93340 (France); Billet, D. [Laboratoire PMTM, Institut Galilee, Univeriste Paris 13, Villetaneuse 93340 (France); Youssef, J. Ben [Laboratoire de Magnetisme de Bretagne, U.B.O., Brest 29238 (France); Bourzami, A. [Departement de Physique, Universite Ferhat Abbas, Setif 19000 (Algeria); Bourahli, M.-H. [Departement d' O. M. P., Universite Ferhat Abbas, Setif 19000 (Algeria)

    2007-01-25

    The structural, electrical and magnetic properties of Ni thin films evaporated onto glass and polycrystalline Cu substrates have been investigated. The Ni thickness ranges from 31 to 165 nm. X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) have been used to study the structure and morphology of these systems. The Ni/Cu and Ni/glass thin films are found to be polycrystalline with a (1 1 1) texture. There is an overall increase of the grain size with increasing thickness. A negative strain was noted indicating that all the samples are under a compressive stress. Diffusion at the grain boundaries seems to be a major contribution to the electrical resistivity in this thickness range. Study of the hysteresis curves, obtained by vibrating sample magnetometer (VSM), indicates that all samples are characterized by an in-plane magnetization easy axis. Higher in-plane coercive fields seem to be associated with higher grain size, indicating that coercivity may be due to nucleation of reverse domains rather than pinning of domain walls. The saturation field and the squareness have been studied as a function of the Ni thickness.

  17. Nanoparticle Thin Films for Gas Sensors Prepared by Matrix Assisted Pulsed Laser Evaporation

    Directory of Open Access Journals (Sweden)

    Roberto Rella

    2009-04-01

    Full Text Available The matrix assisted pulsed laser evaporation (MAPLE technique has been used for the deposition of metal dioxide (TiO2, SnO2 nanoparticle thin films for gas sensor applications. For this purpose, colloidal metal dioxide nanoparticles were diluted in volatile solvents, the solution was frozen at the liquid nitrogen temperature and irradiated with a pulsed excimer laser. The dioxide nanoparticles were deposited on Si and Al2O3 substrates. A rather uniform distribution of TiO2 nanoparticles with an average size of about 10 nm and of SnO2 nanoparticles with an average size of about 3 nm was obtained, as demonstrated by high resolution scanning electron microscopy (SEM-FEG inspections. Gas-sensing devices based on the resistive transduction mechanism were fabricated by depositing the nanoparticle thin films onto suitable rough alumina substrates equipped with interdigitated electrical contacts and heating elements. Electrical characterization measurements were carried out in controlled environment. The results of the gas-sensing tests towards low concentrations of ethanol and acetone vapors are reported. Typical gas sensor parameters (gas responses, response/recovery time, sensitivity, and low detection limit towards ethanol and acetone are presented.

  18. Nanoparticle thin films for gas sensors prepared by matrix assisted pulsed laser evaporation.

    Science.gov (United States)

    Caricato, Anna Paola; Luches, Armando; Rella, Roberto

    2009-01-01

    The matrix assisted pulsed laser evaporation (MAPLE) technique has been used for the deposition of metal dioxide (TiO(2), SnO(2)) nanoparticle thin films for gas sensor applications. For this purpose, colloidal metal dioxide nanoparticles were diluted in volatile solvents, the solution was frozen at the liquid nitrogen temperature and irradiated with a pulsed excimer laser. The dioxide nanoparticles were deposited on Si and Al(2)O(3) substrates. A rather uniform distribution of TiO(2) nanoparticles with an average size of about 10 nm and of SnO(2) nanoparticles with an average size of about 3 nm was obtained, as demonstrated by high resolution scanning electron microscopy (SEM-FEG) inspections. Gas-sensing devices based on the resistive transduction mechanism were fabricated by depositing the nanoparticle thin films onto suitable rough alumina substrates equipped with interdigitated electrical contacts and heating elements. Electrical characterization measurements were carried out in controlled environment. The results of the gas-sensing tests towards low concentrations of ethanol and acetone vapors are reported. Typical gas sensor parameters (gas responses, response/recovery time, sensitivity, and low detection limit) towards ethanol and acetone are presented.

  19. High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Minami, Tadatsugu; Ida, Satoshi; Miyata, Toshihiro

    2002-09-02

    Transparent conducting oxide (TCO) thin films have been deposited at a high rate above 370 nm/min by vacuum arc plasma evaporation (VAPE) using sintered oxide fragments as the source material. It was found that the deposition rate of TCO films was strongly dependent on the deposition pressure, whereas the obtained electrical properties were relatively independent of the pressure. Resistivities of 5.6x10{sup -4} and 2.3x10{sup -4} {omega}{center_dot}cm and an average transmittance above 80% (with substrate included) in the visible range were obtained in Ga-doped ZnO (GZO) thin films deposited at 100 and 350 deg. C, respectively. In addition, a resistivity as low as 1.4x10{sup -4} {omega}{center_dot}cm and an average transmittance above 80% were also obtained in indium-tin-oxide (ITO) films deposited at 300 deg. C. The deposited TCO films exhibited uniform distributions of resistivity and thickness on large area substrates.

  20. Fabrication and characterization of In2S3 thin films deposited by thermal evaporation technique

    International Nuclear Information System (INIS)

    Timoumi, A.; Bouzouita, H.; Kanzari, M.; Rezig, B.

    2005-01-01

    Indium sulphide, In 2 S 3 , thin films present an alternative to conventional CdS films as buffer layer for CIS-based thin film solar cells. The objective is to eliminate toxic cadmium for environmental reasons. Indium sulphide is synthesized and deposited by single source vacuum thermal evaporation method on glass substrates. The films are analyzed by X-ray diffraction (XRD) and spectrophotometric measurements. They have a good crystallinity, homogeneity and adhesion. The X-ray diffraction analysis confirmed the initial amorphous nature of the deposited InS film and phase transition into crystalline In 2 S 3 formed upon annealing at free air for 250 deg. C substrate temperature for 2 h. The optical constants of the deposited films were obtained from the analysis of the experimental recorded transmission and reflectance spectral data over the wavelength range of 300-1800 nm. We note that the films annealed at 250 deg. C for 2 h show a good homogeneity with 80% transmission. An analysis of the optical absorption data of the deposited films revealed an optical direct band gap energy in the range of 2.0-2.2 eV

  1. Electrical transport properties of MoO3 thin films prepared by laser assisted evaporation

    International Nuclear Information System (INIS)

    Lopez-Carreno, L.D.; Pardo, A.; Zuluaga, M.; Torres, J.; Alfonso, J.E.; Cortes-Bracho, O.L.

    2007-01-01

    In the present paper the growth of MoO 3 thin films on common glass substrates are described. The films were prepared by evaporation of a MoO 3 target with a CO 2 laser (10.6 μm), operating in the continuous wave mode. The effect of substrate temperature on the crystallographic structure and electrical properties of MoO 3 thin films was studied. The chemical composition of the different species formed on the films surface was obtained by X-ray photoelectron spectroscopy (XPS) and the crystalline structure was studied with X-ray diffraction (XRD). The electrical conductivity of the films was determined using the standard four-points method. Conductivity of the films varied from de 10 -9 to 10 -5 (Ωcm) -1 in the 300-600 K temperature range. Arrhenius-type plots for the electrical conductivity indicate the presence of at least two different conduction mechanisms. The I-V characteristic curve shows an ohmic behavior only in the 4.5-60 V range. Outside this interval the I-V curve has a behavior described by a power law. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Electrical transport properties of MoO{sub 3} thin films prepared by laser assisted evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Carreno, L.D.; Pardo, A.; Zuluaga, M.; Torres, J.; Alfonso, J.E. [Group of Materials with Technological Applications, GMAT, Physics Department, Universidad Nacional de Colombia, Bogota (Colombia); Cortes-Bracho, O.L. [Group of Materials with Technological Applications, GMAT, Physics Department, Universidad Nacional de Colombia, Bogota (Colombia); Electronic Engineering Department, Universidad Nacional de Colombia, Bogota (Colombia)

    2007-07-01

    In the present paper the growth of MoO{sub 3} thin films on common glass substrates are described. The films were prepared by evaporation of a MoO{sub 3} target with a CO{sub 2} laser (10.6 {mu}m), operating in the continuous wave mode. The effect of substrate temperature on the crystallographic structure and electrical properties of MoO{sub 3} thin films was studied. The chemical composition of the different species formed on the films surface was obtained by X-ray photoelectron spectroscopy (XPS) and the crystalline structure was studied with X-ray diffraction (XRD). The electrical conductivity of the films was determined using the standard four-points method. Conductivity of the films varied from de 10{sup -9} to 10{sup -5} ({omega}cm){sup -1} in the 300-600 K temperature range. Arrhenius-type plots for the electrical conductivity indicate the presence of at least two different conduction mechanisms. The I-V characteristic curve shows an ohmic behavior only in the 4.5-60 V range. Outside this interval the I-V curve has a behavior described by a power law. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation

    International Nuclear Information System (INIS)

    Minami, Tadatsugu; Ida, Satoshi; Miyata, Toshihiro

    2002-01-01

    Transparent conducting oxide (TCO) thin films have been deposited at a high rate above 370 nm/min by vacuum arc plasma evaporation (VAPE) using sintered oxide fragments as the source material. It was found that the deposition rate of TCO films was strongly dependent on the deposition pressure, whereas the obtained electrical properties were relatively independent of the pressure. Resistivities of 5.6x10 -4 and 2.3x10 -4 Ω·cm and an average transmittance above 80% (with substrate included) in the visible range were obtained in Ga-doped ZnO (GZO) thin films deposited at 100 and 350 deg. C, respectively. In addition, a resistivity as low as 1.4x10 -4 Ω·cm and an average transmittance above 80% were also obtained in indium-tin-oxide (ITO) films deposited at 300 deg. C. The deposited TCO films exhibited uniform distributions of resistivity and thickness on large area substrates

  4. Thermally evaporated thin films of SnS for application in solar cell devices

    International Nuclear Information System (INIS)

    Miles, Robert W.; Ogah, Ogah E.; Zoppi, Guillaume; Forbes, Ian

    2009-01-01

    SnS (tin sulphide) is of interest for use as an absorber layer and the wider energy bandgap phases e.g. SnS 2 , Sn 2 S 3 and Sn/S/O alloys of interest as Cd-free buffer layers for use in thin film solar cells. In this work thin films of tin sulphide have been thermally evaporated onto glass and SnO 2 :coated glass substrates with the aim of optimising the properties of the material for use in photovoltaic solar cell device structures. In particular the effects of source temperature, substrate temperature, deposition rate and film thickness on the chemical and physical properties of the layers were investigated. Energy dispersive X-ray analysis was used to determine the film composition, X-ray diffraction to determine the phases present and structure of each phase, transmittance and reflectance versus wavelength measurements to determine the energy bandgap and scanning electron microscopy to observe the surface topology and topography and the properties correlated to the deposition parameters. Using the optimised conditions it is possible to produce thin films of tin sulphide that are pinhole free, conformal to the substrate and that consist of densely packed columnar grains. The composition, phases present and the optical properties of the layers deposited were found to be highly sensitive to the deposition conditions. Energy bandgaps in the range 1.55 eV-1.7 eV were obtained for a film thickness of 0.8 μm, and increasing the film thickness to > 1 μm resulted in a reduction of the energy bandgap to less than 1.55 eV. The applicability of using these films in photovoltaic solar cell device structures is also discussed.

  5. Application Of A Thin Film Evaporator System For Management Of Liquid High-Level Wastes At Hanford

    International Nuclear Information System (INIS)

    Tedeschi, A.R.; Wilson, R.A.

    2010-01-01

    A modular, transportable evaporator system, using thin film evaporative technology, is planned for deployment at the Hanford radioactive waste storage tank complex. This technology, herein referred to as a wiped film evaporator (WFE), will be located at grade level above an underground storage tank to receive pumped liquids, concentrate the liquid stream from 1.1 specific gravity to approximately 1.4 and then return the concentrated solution back into the tank. Water is removed by evaporation at an internal heated drum surface exposed to high vacuum. The condensed water stream will be shipped to the site effluent treatment facility for final disposal. This operation provides significant risk mitigation to failure of the aging 242-A Evaporator facility; the only operating evaporative system at Hanford maximizing waste storage. This technology is being implemented through a development and deployment project by the tank farm operating contractor, Washington River Protection Solutions (WRPS), for the Office of River Protection/Department of Energy (ORP/DOE), through Columbia Energy and Environmental Services, Inc. (Columbia Energy). The project will finalize technology maturity and install a system at one of the double-shell tank farms. This paper discusses results of pre-project pilot-scale testing by Columbia Energy and ongoing technology maturation development scope through fiscal year 2012, including planned additional pilot-scale and full-scale simulant testing and operation with actual radioactive tank waste.

  6. APPLICATION OF A THIN FILM EVAPORATOR SYSTEM FOR MANAGEMENT OF LIQUID HIGH-LEVEL WASTES AT HANFORD

    Energy Technology Data Exchange (ETDEWEB)

    TEDESCHI AR; WILSON RA

    2010-01-14

    A modular, transportable evaporator system, using thin film evaporative technology, is planned for deployment at the Hanford radioactive waste storage tank complex. This technology, herein referred to as a wiped film evaporator (WFE), will be located at grade level above an underground storage tank to receive pumped liquids, concentrate the liquid stream from 1.1 specific gravity to approximately 1.4 and then return the concentrated solution back into the tank. Water is removed by evaporation at an internal heated drum surface exposed to high vacuum. The condensed water stream will be shipped to the site effluent treatment facility for final disposal. This operation provides significant risk mitigation to failure of the aging 242-A Evaporator facility; the only operating evaporative system at Hanford maximizing waste storage. This technology is being implemented through a development and deployment project by the tank farm operating contractor, Washington River Protection Solutions (WRPS), for the Office of River Protection/Department of Energy (ORP/DOE), through Columbia Energy & Environmental Services, Inc. (Columbia Energy). The project will finalize technology maturity and install a system at one of the double-shell tank farms. This paper discusses results of pre-project pilot-scale testing by Columbia Energy and ongoing technology maturation development scope through fiscal year 2012, including planned additional pilot-scale and full-scale simulant testing and operation with actual radioactive tank waste.

  7. Substrate dependent physical properties of evaporated CdO thin films for optoelectronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Purohit, Anuradha; Chander, S.; Patel, S.L. [Department of Physics, Mohanlal Sukhadia University, Udaipur-313001 (India); Rangra, K.J. [Sensors and Transducers Group, CSIR-CEERI, Pilani-333031 (India); Dhaka, M.S., E-mail: msdhaka75@yahoo.co.in [Department of Physics, Mohanlal Sukhadia University, Udaipur-313001 (India)

    2017-06-15

    Highlights: • Substrate dependent physical properties of CdO thin films are carried out. • XRD patterns reveal that the films have cubic structure of space group Fm3m. • Optical direct band gap is found to vary with the substrates. • SEM images show that the films are compact and homogeneous. • I–V characteristics show ohmic behavior of the deposited CdO films. - Abstract: In this study, CdO thin films were grown by e-beam evaporation technique on glass, indium tin oxide (ITO), fluorine-doped tin oxide (FTO) and silicon (Si) wafer. The deposited films were analyzed by X-ray diffraction (XRD), UV–Vis spectrophotometer, scanning electron microscopy, energy dispersive spectroscopy (EDS) and source meter (current–voltage) for structural, optical, surface morphological, elemental and electrical analysis, respectively. The films have single phase of cubic structure (space group Fm3m) with (200) preferred orientation. The structural parameters viz. inter-planar spacing, grain size, lattice constant, internal strain and dislocation density are calculated and found to vary with the nature of the substrates. The optical band gap was found in the range 2.24–3.95 eV and strongly dependents on the substrates. The SEM analysis shows that the films are compact, homogeneous and have granular structure without any defects like pin holes and cracks. The EDS spectra confirmed the presence of cadmium (Cd) and oxygen (O) in the films deposited on different substrates. The current–voltage characteristics of the films show ohmic behavior.

  8. Organic/hybrid thin films deposited by matrix-assisted pulsed laser evaporation (MAPLE)

    Science.gov (United States)

    Stiff-Roberts, Adrienne D.; Ge, Wangyao

    2017-12-01

    Some of the most exciting materials research in the 21st century attempts to resolve the challenge of simulating, synthesizing, and characterizing new materials with unique properties designed from first principles. Achievements in such development for organic and organic-inorganic hybrid materials make them important options for electronic and/or photonic devices because they can impart multi-functionality, flexibility, transparency, and sustainability to emerging systems, such as wearable electronics. Functional organic materials include small molecules, oligomers, and polymers, while hybrid materials include inorganic nanomaterials (such as zero-dimensional quantum dots, one-dimensional carbon nanotubes, or two-dimensional nanosheets) combined with organic matrices. A critically important step to implementing new electronic and photonic devices using such materials is the processing of thin films. While solution-based processing is the most common laboratory technique for organic and hybrid materials, vacuum-based deposition has been critical to the commercialization of organic light emitting diodes based on small molecules, for example. Therefore, it is desirable to explore vacuum-based deposition of organic and hybrid materials that include larger macromolecules, such as polymers. This review article motivates the need for physical vapor deposition of polymeric and hybrid thin films using matrix-assisted pulsed laser evaporation (MAPLE), which is a type of pulsed laser deposition. This review describes the development of variations in the MAPLE technique, discusses the current understanding of laser-target interactions and growth mechanisms for different MAPLE variations, surveys demonstrations of MAPLE-deposited organic and hybrid materials for electronic and photonic devices, and provides a future outlook for the technique.

  9. Oxidation behavior of arc evaporated Al-Cr-Si-N thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tritremmel, Christian; Daniel, Rostislav; Mitterer, Christian; Mayrhofer, Paul H.; Lechthaler, Markus; Polcik, Peter [Christian Doppler Laboratory for Advanced Hard Coatings, Department of Physical Metallurgy and Materials Testing, Montanuniversitaet Leoben, Franz-Josef-Strasse 18, A-8700 Leoben (Austria); Christian Doppler Laboratory for Application Oriented Coating Development, Department of Physical Metallurgy and Materials Testing, Montanuniversitaet Leoben, Franz-Josef-Strasse 18, A-8700 Leoben (Austria); OC Oerlikon Balzers AG, Iramali 18, LI-9496 Balzers (Liechtenstein); PLANSEE Composite Materials GmbH, Siebenbuergerstrasse 23, D-86983 Lechbruck am See (Germany)

    2012-11-15

    The impact of Al and Si on the oxidation behavior of Al-Cr-(Si)-N thin films synthesized by arc evaporation of powder metallurgically prepared Al{sub x}Cr{sub 1-x} targets with x = Al/(Al + Cr) of 0.5, 0.6, and 0.7 and (Al{sub 0.5}Cr{sub 0.5}){sub 1-z}Si{sub z} targets with Si contents of z = 0.05, 0.1, and 0.2 in N{sub 2} atmosphere was studied in detail by means of differential scanning calorimetry, thermogravimetric analysis (TGA), x-ray diffraction, and Raman spectroscopy. Dynamical measurements in synthetic air (up to 1440 Degree-Sign C) revealed the highest onset temperature of pronounced oxidation for nitride coatings prepared from the Al{sub 0.4}Cr{sub 0.4}Si{sub 0.2} target. Isothermal TGA at 1100, 1200, 1250, and 1300 Degree-Sign C highlight the pronounced improvement of the oxidation resistance of Al{sub x}Cr{sub 1-x}N coatings by the addition of Si. The results show that Si promotes the formation of a dense coating morphology as well as a dense oxide scale when exposed to air.

  10. Organic semiconductor rubrene thin films deposited by pulsed laser evaporation of solidified solutions

    Science.gov (United States)

    Majewska, N.; Gazda, M.; Jendrzejewski, R.; Majumdar, S.; Sawczak, M.; Śliwiński, G.

    2017-08-01

    Organic semiconductor rubrene (C42H28) belongs to most preferred spintronic materials because of the high charge carrier mobility up to 40 cm2(V·s)-1. However, the fabrication of a defect-free, polycrystalline rubrene for spintronic applications represents a difficult task. We report preparation and properties of rubrene thin films deposited by pulsed laser evaporation of solidified solutions. Samples of rubrene dissolved in aromatic solvents toluene, xylene, dichloromethane and 1,1-dichloroethane (0.23-1% wt) were cooled to temperatures in the range of 16.5-163 K and served as targets. The target ablation was provided by a pulsed 1064 nm or 266 nm laser. For films of thickness up to 100 nm deposited on Si, glass and ITO glass substrates, the Raman and AFM data show presence of the mixed crystalline and amorphous rubrene phases. Agglomerates of rubrene crystals are revealed by SEM observation too, and presence of oxide/peroxide (C42H28O2) in the films is concluded from matrix-assisted laser desorption/ionization time-of-flight spectroscopic analysis.

  11. Surface functionalization of cyclic olefin copolymer (COC) with evaporated TiO{sub 2} thin film

    Energy Technology Data Exchange (ETDEWEB)

    El Fissi, Lamia, E-mail: lamia.elfissi@uclouvain.be [ICTEAM Institute, Université catholique du Louvain, place de Levant 3, 1348 Louvain-la-Neuve (Belgium); Vandormael, Denis [SIRRIS Liege Science Park, 4102 Seraing (Belgium); Houssiau, Laurent [Research Centre in Physics of Matter and Radiation (PMR), University of Namur, Rue de Bruxelles 61, B-5000 Namur (Belgium); Francis, Laurent A. [ICTEAM Institute, Université catholique du Louvain, place de Levant 3, 1348 Louvain-la-Neuve (Belgium)

    2016-02-15

    Highlights: • TiO{sub 2}/COC (cyclic olefin copolymer) hybrid material for BioMEMS applications. • Thin layer of TiO{sub 2} was deposed on cyclic olefin copolymer using physical vapor deposition (PVD) technique. • The coating possess the highest level of adhesion with an excellent morphology of the hybrid material (TiO{sub 2}/COC). - Abstract: Cyclic olefin copolymer (COC) is a new class of thermoplastic polymers used for a variety of applications ranging from bio-sensing to optics. However, the hydrophobicity of native COC hampers the further development and application of this material [1]. In this work, we report the structural, morphological, and optical properties of the TiO{sub 2}/COC hybrid material, which provides a desirable substrate for optical devices and subsequent surface modifications. The TiO{sub 2} film on COC substrate was deposited by the evaporation method, and it was characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), profilometry and atomic force microscope (AFM). Using an UV-vis spectrophotometer, we found that the transmittance of the TiO{sub 2}/COC hybrid material in the visible domain reached 80%. The TiO{sub 2}/COC hybrid appeared to be stable in most of the assessed polar solvents and acid/basic solutions. The new TiO{sub 2}/COC hybrid material and the robust fabrication method are expected to enable a variety of BioMEMS applications.

  12. Physical properties of very thin SnS films deposited by thermal evaporation

    International Nuclear Information System (INIS)

    Cheng Shuying; Conibeer, Gavin

    2011-01-01

    SnS films with thicknesses of 20–65 nm have been deposited on glass substrates by thermal evaporation. The physical properties of the films were investigated using X-ray diffraction (XRD), scanning electron microscopy, X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and ultraviolet–visible-near infrared spectroscopy at room temperature. The results from XRD, XPS and Raman spectroscopy analyses indicate that the deposited films mainly exhibit SnS phase, but they may contain a tiny amount of Sn 2 S 3 . The deposited SnS films are pinhole free, smooth and strongly adherent to the surfaces of the substrates. The color of the SnS films changes from pale yellow to brown with the increase of the film thickness from 20 nm to 65 nm. The very smooth surfaces of the thin films result in their high reflectance. The direct bandgap of the films is between 2.15 eV and 2.28 eV which is much larger than 1.3 eV of bulk SnS, this is deserving to be investigated further.

  13. Characterization of ITO/CdO/glass thin films evaporated by electron beam technique

    Directory of Open Access Journals (Sweden)

    Hussein Abdel-Hafez Mohamed and Hazem Mahmoud Ali

    2008-01-01

    Full Text Available A thin buffer layer of cadmium oxide (CdO was used to enhance the optical and electrical properties of indium tin oxide (ITO films prepared by an electron-beam evaporation technique. The effects of the thickness and heat treatment of the CdO layer on the structural, optical and electrical properties of ITO films were carried out. It was found that the CdO layer with a thickness of 25 nm results in an optimum transmittance of 70% in the visible region and an optimum resistivity of 5.1×10−3 Ω cm at room temperature. The effect of heat treatment on the CdO buffer layer with a thickness of 25 nm was considered to improve the optoelectronic properties of the formed ITO films. With increasing annealing temperature, the crystallinity of ITO films seemed to improve, enhancing some physical properties, such as film transmittance and conductivity. ITO films deposited onto a CdO buffer layer heated at 450 °C showed a maximum transmittance of 91% in the visible and near-infrared regions of the spectrum associated with the highest optical energy gap of 3.61 eV and electrical resistivity of 4.45×10−4 Ω cm at room temperature. Other optical parameters, such as refractive index, extinction coefficient, dielectric constant, dispersion energy, single effective oscillator energy, packing density and free carrier concentration, were also studied.

  14. Transparent conducting ZnO-CdO thin films deposited by e-beam evaporation technique

    Science.gov (United States)

    Mohamed, H. A.; Ali, H. M.; Mohamed, S. H.; Abd El-Raheem, M. M.

    2006-04-01

    Thin films of Zn{1-x} Cd{x}O with x = 0, 0.1, 0.2, 0.3, 0.4 and 0.5 at.% were deposited by electron-beam evaporation technique. It has been found that, for as-deposited films, both the transmittance and electrical resistivity decreased with increasing the Cd content. To improve the optical and electrical properties of these films, the effect of annealing temperature and time were taken into consideration for Zn{1-x} Cd{x}O film with x = 0.2. It was found that, the optical transmittance and the electrical conductivity were improved significantly with increasing the time of annealing. At fixed temperature of 300 °C, the transmittance increased with increasing the time of annealing and reached its maximum values of 81% in the visible region and 94% in the NIR region at annealing time of 120 min. The low electrical resistivity of 3.6 × 10-3 Ω cm was achieved at the same conditions. Other parameters named free carrier concentrations, refractive index, extinction coefficient, plasma frequency, and relaxation time were studied as a function of annealing temperature and time for 20% Cd content.

  15. Annealing effect on physical properties of evaporated molybdenum oxide thin films for ethanol sensing

    Energy Technology Data Exchange (ETDEWEB)

    Touihri, S., E-mail: s_touihri@yahoo.fr [Unité de Physique des Dispositifs a semi-conducteurs, Faculté des sciences de Tunis, Tunis El Manar University, 2092 Tunis (Tunisia); Arfaoui, A.; Tarchouna, Y. [Unité de Physique des Dispositifs a semi-conducteurs, Faculté des sciences de Tunis, Tunis El Manar University, 2092 Tunis (Tunisia); Labidi, A. [Laboratoire Matériaux, Molécules et Applications, IPEST, BP 51 La Marsa 2070, Tunis (Tunisia); Amlouk, M. [Unité de Physique des Dispositifs a semi-conducteurs, Faculté des sciences de Tunis, Tunis El Manar University, 2092 Tunis (Tunisia); Bernede, J.C. [LUNAM, Universite de Nantes, Moltech Anjou, CNRS, UMR 6200, FSTN, 2 Rue de la houssiniere, BP 92208, Nantes F-44322 (France)

    2017-02-01

    Highlights: • Thermally grown molybdenum oxide films are amorphous, oxygen deficient and gas sensing. • Air or vacuum annealing transforms them into a sub-stoichiometric MoO{sub 3−x} phase. • The samples annealed at 500 °C in oxygen were crystallized and identified as pure orthorhombic MoO{sub 3} phase. • The conduction process and sensing mechanism of MoO{sub 3-x} to ethanol have been studied. - Abstract: This paper deals with some physical investigations on molybdenum oxide thin films growing on glass substrates by the thermal evaporation method. These films have been subjected to an annealing process under vacuum, air and oxygen at various temperatures 673, 723 and 773 K. First, the physical properties of these layers were analyzed by means of X-ray diffraction, Raman spectroscopy, scanning electron microscopy (SEM) and optical measurements. These techniques have been used to investigate the oxygen index in MoO{sub x} properties during the heat treatment. Second, from the reflectance and transmittance optical measurements, it was found that the direct band gap energy value increased from 3.16 to 3.90 eV. Finally, the heat treatments reveal that the oxygen index varies in such molybdenum oxides showing noticeably sensitivity toward ethanol gas.

  16. Hydroxyapatite thin films grown by pulsed laser deposition and matrix assisted pulsed laser evaporation: Comparative study

    Science.gov (United States)

    Popescu-Pelin, G.; Sima, F.; Sima, L. E.; Mihailescu, C. N.; Luculescu, C.; Iordache, I.; Socol, M.; Socol, G.; Mihailescu, I. N.

    2017-10-01

    Pulsed Laser Deposition (PLD) and Matrix Assisted Pulsed Laser Evaporation (MAPLE) techniques were applied for growing hydroxyapatite (HA) thin films on titanium substrates. All experiments were conducted in a reaction chamber using a KrF* excimer laser source (λ = 248 nm, τFWHM ≈ 25 ns). Half of the samples were post-deposition thermally treated at 500 °C in a flux of water vapours in order to restore crystallinity and improve adherence. Coating surface morphologies and topographies specific to the deposition method were evidenced by scanning electron, atomic force microscopy investigations and profilometry. They were shown to depend on deposition technique and also on the post-deposition treatment. Crystalline structure of the coatings evaluated by X-ray diffraction was improved after thermal treatment. Biocompatibility of coatings, cellular adhesion, proliferation and differentiation tests were conducted using human mesenchymal stem cells (MSCs). Results showed that annealed MAPLE deposited HA coatings were supporting MSCs proliferation, while annealed PLD obtained films were stimulating osteogenic differentiation.

  17. AC and dielectric properties of vacuum evaporated InTe bilayer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Matheswaran, P. [PG and Research, Department of Physics, Kongunadu Arts and Science College (Autonomous), GN Mills (po), Coimbatore 641 029, Tamil Nadu (India); Sathyamoorthy, R., E-mail: rsathya59@gmail.com [PG and Research, Department of Physics, Kongunadu Arts and Science College (Autonomous), GN Mills (po), Coimbatore 641 029, Tamil Nadu (India); Saravanakumar, R. [PG and Research, Department of Physics, Kongunadu Arts and Science College (Autonomous), GN Mills (po), Coimbatore 641 029, Tamil Nadu (India); Velumani, S. [Department of Electrical Engineering (SEES), CINVESTAV-IPN Zacatenco, D.F., 07360 (Mexico)

    2010-10-25

    III-VI compound semiconductors receive great attention due to its applications in memory devices, switching devices, gas sensors, hybrid solar cells, etc. InTe thin films were prepared by sequential thermal evaporation of In and Te at Ar atmosphere. X-ray diffraction pattern of the films shows that the films posses mixed phase of In{sub 2}Te{sub 3} and In{sub 2}Te{sub 5}. Grain size (D) and dislocation density were calculated by using Scherer's formula. Surface morphology of the film is analyzed by SEM and the surface is found to be agglomeration of well defined grains. EDS analysis reveals that elemental composition is in right stoichiometry. The value of capacitance and tan {delta} was recorded with respect to different frequencies and at different temperatures. It is observed that the capacitance decreases with increase in frequency at all temperatures. The observed nature of the capacitance is due to the inability of the dipoles to orient in a rapidly varying electric field. The pronounced increase in capacitance toward the low frequency region may be attributed to the blocking of charge carriers at the electrodes which leads to space charge layer resulting in the increase of capacitance. The mechanism responsible for AC conduction is found to be electronic hopping. TCC and TCP values were calculated and the results are discussed.

  18. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    International Nuclear Information System (INIS)

    Tripathy, Sumanta K.; Rajeswari, V. P.

    2014-01-01

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn 3 O 4 , corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells

  19. Development of a hybrid sputtering/evaporation process for Cu(In,Ga)Se{sub 2} thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Acciarri, M.; Binetti, S.; Le Donne, A.; Lorenzi, B.; Caccamo, L.; Miglio, L. [Dipartimento di Scienza dei Materiali e Solar Energy Research Center MIB-SOLAR, Universita di Milano Bicocca, Milan (Italy); Moneta, R.; Marchionna, S.; Meschia, M. [Voltasolar s.r.l, Turate (Italy)

    2011-08-15

    In this paper we report a new method for Cu(In,Ga)Se{sub 2} deposition for solar cell application. Differently from the common co-evaporation process, an alterative approach for thin film Cu(In,Ga)Se{sub 2} has been tested: the sputtering deposition of metal elements combined with the selenium evaporation. We have studied the relationships between the growth parameters of our hybrid sputtering/evaporation method and the chemical-physical properties of the CIGS films. The cells are completed with a CdS buffer layer deposited by chemical bath deposition and ZnO + ITO deposited by RF sputtering. Test solar cells of 0.5 cm{sup 2} have shown an efficiency of 10% and 2.5% on glass and stainless steel substrate respectively. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Vacuum Pumping Performance Comparison of Non-Evaporable Getter Thin Films Deposited Using Argon and Krypton as Sputtering Gases

    CERN Document Server

    Liu, Xianghong; He, Yun; Li, Yulin

    2005-01-01

    Owing to the outstanding vacuum performance and the low secondary electron yield, non-evaporable getter (NEG) thin film deposited onto interior walls has gained widespread acceptance and has been incorporated into many accelerator vacuum system designs. The titanium-zirconium-vanadium (T-Zr-V) NEG thin films were deposited onto the interior wall of stainless steel pipes via DC magnetron sputtering method using either argon or krypton gas as sputtering gas. Vacuum pumping evaluation tests were carried out to compare vacuum pumping performances of the Ti-Zr-V NEG thin films deposited using argon or krypton. The results showed much higher initial pumping speed for the Kr-sputtered NEG film than the Ar-sputtered film, though both films have similar activation behavior. The compositions and textures of both thin films were measured to correlate to the pumping performances.

  1. Air annealing induced transformation of cubic CdSe microspheres into hexagonal nanorods and micro-pyramids

    Energy Technology Data Exchange (ETDEWEB)

    Kale, Rohidas B., E-mail: rb_kale@yahoo.co.in [Department of Physics, Institute of Science, Mumbai 400032, M.S. (India); Lu, Shih-Yuan, E-mail: sylu@mx.nthu.edu.tw [Department of Chemical Engineering, National Tsing-Hua University, Hsin-Chu 30013, Taiwan (China)

    2015-08-15

    Highlights: • Nanocrystalline CdSe thin films were deposited using inexpensive CBD method. • Air annealing induced structural and interesting morphological transformation. • The as-deposited CdSe thin films showed a blue shift in its optical spectra. • The films showed a red shift in their optical spectra after annealing. - Abstract: CdSe thin films have been deposited onto glass substrates using a chemical bath deposition method at relatively low temperatures (40 °C). The precursors used for the deposition of the thin films are cadmium nitrate hexahydrate, freshly prepared sodium selenosulfate solution and aqueous ammonia solution as a complex as well as pH adjusting reagent. In order to study the influence of air annealing on their physicochemical properties, the as-deposited CdSe thin films were further annealed at 200 °C and 400 °C for 3 h in air atmosphere. Significant changes in the morphology and photonic properties were clearly observed after the thermal annealing of the CdSe thin films. The as-deposited CdSe films grow with the cubic phase that transforms into mixed cubic and hexagonal wurtzite phase with improved crystalline quality of the films after the air annealing. Morphological observation reveals that the as-deposited thin films grow with multilayer that consists of network or mesh like structure, uniformly deposited on the glass substrate over which microspheres are uniformly distributed. After air annealing, CdSe nanorods emerged from the microspheres along with conversion of few microspheres into micro-pyramids. The UV–visible study illustrates that the as-deposited thin film shows blue shifts in its optical spectrum and the spectrum was red-shifted after annealing the CdSe thin films. The band gap of the CdSe thin films were found to be decreased after the thermal treatment.

  2. Characterization of Cu(In,Ga)(S,Se)2 thin films prepared by sequential evaporation from ternary compounds

    International Nuclear Information System (INIS)

    Yamaguchi, T.; Hatori, M.; Niiyama, S.; Miyake, Y.

    2006-01-01

    Cu(In,Ga)(S,Se) 2 thin films were fabricated by sequential evaporation from CuGaSe 2 , CuInSe 2 and In 2 S 3 compounds for photovoltaic device applications. From XRF analysis, the Cu:(In+Ga):(S+Se) atomic ratio in all thin films was approximately 1:1:2. As the [In 2 S 3 ]/([CuGaSe 2 ]+[CuInSe 2 ]) mole ratio in the evaporating materials increased, the S/(S+Se) atomic ratio in the thin films increased from 0 to 0.16 determined by XRF and to 0.43 by EPMA. XRD studies demonstrated that the prepared thin films had a chalcopyrite Cu(In,Ga) (S,Se) 2 structure and the preferred orientation to the 112 plane. The SEM images demonstrated that Cu(In,Ga)(S,Se) 2 thin films had large and columnar grains. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

  3. Electrical Transport Mechanisms and Photoconduction in Undoped Crystalline Flash-Evaporated Lead Iodide Thin Films

    Science.gov (United States)

    Al-Daraghmeh, Tariq M.; Saleh, Mahmoud H.; Ahmad, Mais Jamil A.; Bulos, Basim N.; Shehadeh, Khawla M.; Jafar, Mousa M. Abdul-Gader

    2018-03-01

    The flash-evaporation technique was utilized to fabricate undoped 1.35-μm and 1.2-μm thick lead iodide films at substrate temperatures T_{{s}} = 150 °C and 200°C, respectively. The films were deposited onto a coplanar comb-like copper (Cu-) electrode pattern, previously coated on glass substrates to form lateral metal-semiconductor-metal (MSM-) structures. The as-measured constant- temperature direct-current (dc)-voltage ( I( {V;T} ) - V ) curves of the obtained lateral coplanar Cu-PbI2-Cu samples (film plus electrode) displayed remarkable ohmic behavior at all temperatures ( T = 18 - 90°C). Their dc electrical resistance R_{{dc}} (T ) revealed a single thermally-activated conduction mechanism over the temperature range with activation energy E_{{act}} ≈ 0.90 - 0.98 {eV} , slightly less than half of room-temperature bandgap energy E_{{g}} ( ≈ 2.3 {eV} ) of undoped 2H-polytype PbI2 single crystals. The undoped flash-evaporated {PbI}_{{x}} thin films were homogeneous and almost stoichiometric ( x ≈ 1.87 ), in contrast to findings on lead iodide films prepared by other methods, and were highly crystalline hexagonal 2H-polytypic structure with c-axis perpendicular to the surface of substrates maintained at T_{s} ≳ 150°C. Photoconductivity measurements made on these lateral Cu-PbI2-Cu-structures under on-off visible-light illumination reveal a feeble photoresponse for long wavelengths ( λ > 570 {nm} ), but a strong response to blue light of photon energy E_{{ph}} ≈ 2.73 {eV} ( > E_{{g}} ), due to photogenerated electron-hole (e-h) pairs via direct band-to-band electronic transitions. The constant-temperature/dc voltage current-time I( {T,V} ) - t curves of the studied lateral PbI2 MSM-structures at low ambient temperatures ( T < 50°C), after cutting off the blue-light illumination, exhibit two trapping mechanisms with different relaxation times. These strongly depend on V and T , with thermally generated charge carriers in the PbI2 mask photogenerated

  4. Preparation by thermal evaporation under vacuum of thin nickel films without support

    International Nuclear Information System (INIS)

    Prugne, P.; Garin, P.; Lechauguette, G.

    1959-01-01

    This note deals with the preparation of nickel films without support by means of the technique described but using a new evaporation apparatus. In effect it was necessary, in order to obtain these nickel films, to modify the thermal evaporation conditions. An attempt to obtain a film without support after evaporation in a conventional apparatus led almost invariably to defeat. This appeared to be due to the high concentration of oxygen and of various vapors (diffusion pumps, degassing, etc.) present in the residual atmosphere of the conventional evaporation system. Reprint of a paper published in 'Le Vide, N. 74, March-April 1958, p. 82-83

  5. Supramolecular structure of a perylene derivative in thin films made by vacuum thermal evaporation

    International Nuclear Information System (INIS)

    Fernandes, Jose Diego

    2015-01-01

    The supramolecular arrangement of organic thin films is a factor that influences both optical and electrical properties of these films and, consequently, the technological applications involving organic electronics. In this dissertation, thin films of a perylene derivative (bis butylimido perylene, acronym BuPTCD) were produced by physical vapor deposition (PVD) using vacuum thermal evaporation. The aim of this work was to investigate the supramolecular arrangement of BuPTCD films, which implies to control the thickness at nanometer scale and to determine the molecular organization, the morphology (at nano and micrometer scales) and the crystallinity, besides the stability of this arrangement as a function of the temperature. Optical properties (such as absorption and emission) and electrical properties (such as conductivity and photoconductivity) were also determined. The UV-Vis absorption spectra revealed a controlled growth (uniform) of the BuPTCD films. Atomic force and optical microscopy images showed a homogeneous surface of the film at nano and micrometer scales, respectively. The X-ray diffraction showed that the BuPTCD powder and PVD film have different crystalline structures, with the BuPTCD molecules head-on oriented in the PVD films, supported on the substrate surface by the side group (FTIR). This structure favors the light emission (photoluminescence) by the formation of excimers. The thermal treatment (200°C for 10 min) does not affect the molecular organization of the PVD films, showing a thermal stability of the BuPTCD supramolecular arrangement under these circumstances. The electrical measurements (DC) showed a linear increase of the current as a function of the tension, which is characteristic of ohmic behavior. Also, the films exhibited an increase of current by 2 orders of magnitude when exposed to light (photoconductive properties). Finally, BuPTCD films were exposed to vapor of trifluoroacetic acid (TFA) to verify the sensitivity of the Bu

  6. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    Energy Technology Data Exchange (ETDEWEB)

    Tripathy, Sumanta K.; Rajeswari, V. P. [Centre for Nano Science and Technology, GVP College of Engineering (Autonomous), Visakhapatnam- 530048 (India)

    2014-01-28

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn{sub 3}O{sub 4}, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.

  7. Effect of thermal annealing on structural properties of SrGa2S4:Ce thin films prepared by flash evaporation

    International Nuclear Information System (INIS)

    Gambarov, E.F.; Bayramov, A.I.

    2009-01-01

    In the present report the preparation technology and structural characterization of Ce 3 +activated SrGa 2 S 4 thin films are given. SrGa 2 S 4 : e thin films are prepared by so called flash evaporation which is simple and inexpensive method for thin film deposition. X-ray diffraction shows that the as deposited films exhibit amorphous behavior, but after annealing in H S stream, the polycrystalline one. EPMA results indicate nearly stoichiometric composition of the thin films

  8. Silver-Doping Effects and Photostructural Transformation in Evaporated AS2S3 Thin Films.

    Science.gov (United States)

    1982-02-16

    of evaporated silver halide films. The details of the preparation of evaporated films of silver halides are reported by Junod at. al. (41 ) The...1980). 40. M.S. Chang, N.D. Hwang, J.T. Chen, Extended Abstr. Electrochem. Soc., 80-1, 692, (1980). 41. P. Junod , N. MHediger, B. Kilchoy. R. Steiger

  9. Real-time kinetic modeling of YSZ thin film roughness deposited by e-beam evaporation technique

    International Nuclear Information System (INIS)

    Galdikas, A.; Cerapaite-Trusinskiene, R.; Laukaitis, G.; Dudonis, J.

    2008-01-01

    In the present study, the process of yttrium-stabilized zirconia (YSZ) thin films deposition on optical quartz (SiO 2 ) substrates using e-beam deposition technique controlling electron gun power is analyzed. It was found that electron gun power influences the non-monotonous kinetics of YSZ film surface roughness. The evolution of YSZ thin film surface roughness was analyzed by a kinetic model. The model is based on the rate equations and includes processes of surface diffusion of the adatoms and the clusters, nucleation, growth and coalescence of islands in the case of thin film growth in Volmer-Weber mode. The analysis of the experimental results done by modeling explains non-monotonous kinetics and dependence of the surface roughness on the electron gun power. A good quantitative agreement with experimental results is obtained taking into account the initial roughness of the substrate surface and the amount of the clusters in the flux of evaporated material.

  10. Indium-tin-oxide thin film deposited by a dual ion beam assisted e-beam evaporation system

    International Nuclear Information System (INIS)

    Bae, J.W.; Kim, J.S.; Yeom, G.Y.

    2001-01-01

    Indium-tin-oxide (ITO) thin films were deposited on polycarbonate (PC) substrates at low temperatures (<90 deg. C) by a dual ion beam assisted e-beam evaporation system, where one gun (gun 1) is facing ITO flux and the other gun (gun 2) is facing the substrate. In this experiment, effects of rf power and oxygen flow rate of ion gun 2 on the electrical and optical properties of depositing ITO thin films were investigated. At optimal deposition conditions, ITO thin films deposited on the PC substrates larger than 20 cmx20 cm showed the sheet resistance of less than 40 Ω/sq., the optical transmittance of above 90%, and the uniformity of about 5%

  11. Preparation of InSe Thin Films by Thermal Evaporation Method and Their Characterization: Structural, Optical, and Thermoelectrical Properties

    Directory of Open Access Journals (Sweden)

    Sarita Boolchandani

    2018-01-01

    Full Text Available The indium selenium (InSe bilayer thin films of various thickness ratios, InxSe(1-x (x = 0.25, 0.50, 0.75, were deposited on a glass substrate keeping overall the same thickness of 2500 Ǻ using thermal evaporation method under high vacuum atmosphere. Electrical, optical, and structural properties of these bilayer thin films have been compared before and after thermal annealing at different temperatures. The structural and morphological characterization was done using XRD and SEM, respectively. The optical bandgap of these thin films has been calculated by Tauc’s relation that varies within the range of 1.99 to 2.05 eV. A simple low-cost thermoelectrical power measurement setup is designed which can measure the Seebeck coefficient “S” in the vacuum with temperature variation. The setup temperature variation is up to 70°C. This setup contains a Peltier device TEC1-12715 which is kept between two copper plates that act as a reference metal. Also, in the present work, the thermoelectric power of indium selenide (InSe and aluminum selenide (AlSe bilayer thin films prepared and annealed in the same way is calculated. The thermoelectric power has been measured by estimating the Seebeck coefficient for InSe and AlSe bilayer thin films. It was observed that the Seebeck coefficient is negative for InSe and AlSe thin films.

  12. FULL SCALE TESTING TECHNOLOGY MATURATION OF A THIN FILM EVAPORATOR FOR HIGH-LEVEL LIQUID WASTE MANAGEMENT AT HANFORD - 12125

    Energy Technology Data Exchange (ETDEWEB)

    TEDESCHI AR; CORBETT JE; WILSON RA; LARKIN J

    2012-01-26

    Simulant testing of a full-scale thin-film evaporator system was conducted in 2011 for technology development at the Hanford tank farms. Test results met objectives of water removal rate, effluent quality, and operational evaluation. Dilute tank waste simulant, representing a typical double-shell tank supernatant liquid layer, was concentrated from a 1.1 specific gravity to approximately 1.5 using a 4.6 m{sup 2} (50 ft{sup 2}) heated transfer area Rototherm{reg_sign} evaporator from Artisan Industries. The condensed evaporator vapor stream was collected and sampled validating efficient separation of the water. An overall decontamination factor of 1.2E+06 was achieved demonstrating excellent retention of key radioactive species within the concentrated liquid stream. The evaporator system was supported by a modular steam supply, chiller, and control computer systems which would be typically implemented at the tank farms. Operation of these support systems demonstrated successful integration while identifying areas for efficiency improvement. Overall testing effort increased the maturation of this technology to support final deployment design and continued project implementation.

  13. Effect of ambient hydrogen sulfide on the physical properties of vacuum evaporated thin films of zinc sulfide

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Beer Pal [Department of Physics, C.C.S. University, Meerut 250004 (India)], E-mail: drbeerpal@gmail.com; Singh, Virendra [Forensic Science Laboratory, Malviya Nagar, New Delhi 110017 (India); Tyagi, R.C.; Sharma, T.P. [Department of Physics, C.C.S. University, Meerut 250004 (India)

    2008-02-15

    Evaporated thin films of zinc sulfide (ZnS) have been deposited in a low ambient atmosphere of hydrogen sulfide (H{sub 2}S {approx}10{sup -4} Torr). The H{sub 2}S atmosphere was obtained by a controlled thermal decomposition of thiourea [CS(NH{sub 2}){sub 2}] inside the vacuum chamber. It has been observed that at elevated substrates temperature of about 200 deg. C helps eject any sulfur atoms deposited due to thermal decomposition of ZnS during evaporation. The zinc ions promptly recombine with H{sub 2}S to give better stoichiometry of the deposited films. Optical spectroscopy, X-ray diffraction patterns and scanning electron micrographs depict the better crystallites and uniformity of films deposited by this technique. These deposited films were found to be more adherent to the substrates and are pinhole free, which is a very vital factor in device fabrication.

  14. The Effects of Film Thickness and Evaporation Rate on Si-Cu Thin Films for Lithium Ion Batteries.

    Science.gov (United States)

    Polat, B Deniz; Keles, Ozgul

    2015-12-01

    The reversible cyclability of Si based composite anodes is greatly improved by optimizing the atomic ratio of Si/Cu, the thickness and the evaporation rates of films fabricated by electron beam deposition method. The galvanostatic test results show that 500 nm thick flim, having 10%at. Cu-90%at. Si, deposited with a moderate evaporation rate (10 and 0.9 Å/s for Si and Cu respectively) delivers 2642.37 mAh g(-1) as the first discharge capacity with 76% Coulombic efficiency. 99% of its initial capacity is retained after 20 cycles. The electron conductive pathway and high mechanical tolerance induced by Cu atoms, the low electrical resistivity of the film due to Cu3Si particles, and the homogeneously distributed nano-sized/amorphous particles in the composite thin film could explain this outstanding electrochemical performance of the anode.

  15. Atomistic modelling of evaporation and explosive boiling of thin film liquid argon over internally recessed nanostructured surface

    Energy Technology Data Exchange (ETDEWEB)

    Hasan, Mohammad Nasim, E-mail: nasim@me.buet.ac.bd.com; Shavik, Sheikh Mohammad, E-mail: shavik@me.buet.ac.bd.com; Rabbi, Kazi Fazle, E-mail: rabbi35.me10@gmail.com; Haque, Mominul, E-mail: mominulmarup@gmail.com [Department of Mechanical Engineering, Bangladesh University of Engineering & Technology (BUET) Dhaka-1000 (Bangladesh)

    2016-07-12

    Molecular dynamics (MD) simulations have been carried out to investigate evaporation and explosive boiling phenomena of thin film liquid argon on nanostructured solid surface with emphasis on the effect of solid-liquid interfacial wettability. The nanostructured surface considered herein consists of trapezoidal internal recesses of the solid platinum wall. The wetting conditions of the solid surface were assumed such that it covers both the hydrophilic and hydrophobic conditions and hence effect of interfacial wettability on resulting evaporation and boiling phenomena was the main focus of this study. The initial configuration of the simulation domain comprised of a three phase system (solid platinum, liquid argon and vapor argon) on which equilibrium molecular dynamics (EMD) was performed to reach equilibrium state at 90 K. After equilibrium of the three-phase system was established, the wall was set to different temperatures (130 K and 250 K for the case of evaporation and explosive boiling respectively) to perform non-equilibrium molecular dynamics (NEMD). The variation of temperature and density as well as the variation of system pressure with respect to time were closely monitored for each case. The heat flux normal to the solid surface was also calculated to illustrate the effectiveness of heat transfer for hydrophilic and hydrophobic surfaces in cases of both nanostructured surface and flat surface. The results obtained show that both the wetting condition of the surface and the presence of internal recesses have significant effect on normal evaporation and explosive boiling of the thin liquid film. The heat transfer from solid to liquid in cases of surface with recesses are higher compared to flat surface without recesses. Also the surface with higher wettability (hydrophilic) provides more favorable conditions for boiling than the low-wetting surface (hydrophobic) and therefore, liquid argon responds quickly and shifts from liquid to vapor phase faster in

  16. Thin-film encapsulation of organic electronic devices based on vacuum evaporated lithium fluoride as protective buffer layer

    Science.gov (United States)

    Peng, Yingquan; Ding, Sihan; Wen, Zhanwei; Xu, Sunan; Lv, Wenli; Xu, Ziqiang; Yang, Yuhuan; Wang, Ying; Wei, Yi; Tang, Ying

    2017-03-01

    Encapsulation is indispensable for organic thin-film electronic devices to ensure reliable operation and long-term stability. For thin-film encapsulating organic electronic devices, insulating polymers and inorganic metal oxides thin films are widely used. However, spin-coating of insulating polymers directly on organic electronic devices may destroy or introduce unwanted impurities in the underlying organic active layers. And also, sputtering of inorganic metal oxides may damage the underlying organic semiconductors. Here, we demonstrated that by utilizing vacuum evaporated lithium fluoride (LiF) as protective buffer layer, spin-coated insulating polymer polyvinyl alcohol (PVA), and sputtered inorganic material Er2O3, can be successfully applied for thin film encapsulation of copper phthalocyanine (CuPc)-based organic diodes. By encapsulating with LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films, the device lifetime improvements of 10 and 15 times can be achieved. These methods should be applicable for thin-film encapsulation of all kinds of organic electronic devices. Moisture-induced hole trapping, and Al top electrode oxidation are suggest to be the origins of current decay for the LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films encapsulated devices, respectively.

  17. Uniform thin films of TiO2 nanoparticles deposited by matrix-assisted pulsed laser evaporation

    International Nuclear Information System (INIS)

    Caricato, A.P.; Manera, M.G.; Martino, M.; Rella, R.; Romano, F.; Spadavecchia, J.; Tunno, T.; Valerini, D.

    2007-01-01

    We report morphological and optical properties of a colloidal TiO 2 nanoparticle film, deposited on a quartz substrate by using the Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique. Atomic Force Microscopy demonstrated that a good uniformity of the deposition can be obtained. The presence of agglomerates with dimensions of about 1 μm in size was noticed. Form UV-vis transmission spectra, recorded in the 200-800 nm range, the optical constants and the energy gap were determined besides the film thickness. The optical constants resulted in agreement with the values reported in literature for TiO 2 nanoparticle thin films

  18. Growth Structural and Optical Properties of the Thermally Evaporated Tin Diselenide (SnSe2) Thin Films

    OpenAIRE

    R. Sachdeva1,; M. Sharma1,; A. Devi1,; U. Parihar1,; N. Kumar1,; N. Padha1,; C.J. Panchal

    2011-01-01

    Tin diselenide (SnSe2) compound was prepared by melt-quenching technique from its constituent elements. The phase structure and composition of the chemical constituents present in the bulk has been determined using X-ray diffraction (XRD) and energy dispersion X-ray analysis (EDAX) respectively. SnSe2 thin films were grown using direct thermal evaporation of SnSe2 compound material on chemically cleaned glass substrate, which were held at different substrate temperatures. X-ray diffraction an...

  19. Annealing effects on room temperature thermoelectric performance of p-type thermally evaporated Bi-Sb-Te thin films

    Science.gov (United States)

    Singh, Sukhdeep; Singh, Janpreet; Tripathi, S. K.

    2018-05-01

    Bismuth antimony telluride (Bi-Sb-Te) compounds have been investigated for the past many decades for thermoelectric (TE) power generation and cooling purpose. We synthesized this compound with a stoichiometry Bi1.2Sb0.8Te3 through melt cool technique and thin films of as synthesized material were deposited by thermal evaporation. The prime focus of the present work is to study the influence of annealing temperature on the room temperature (RT) power factor of thin films. Electrical conductivity and Seebeck coefficient were studied and power factors were calculated which showed a peak value at 323 K. The compounds performance is comparable to some very efficient Bi-Sb-Te reported stoichiometries at RT scale. The values observed show that material has an enormous potential for energy production at ambient temperature scales.

  20. Optical and Morphological Studies of Thermally Evaporated PTCDI-C8 Thin Films for Organic Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Ronak Rahimi

    2013-01-01

    Full Text Available PTCDI-C8 due to its relatively high photosensitivity and high electron mobility has attracted much attention in organic semiconductor devices. In this work, thin films of PTCDI-C8 with different thicknesses were deposited on silicon substrates with native silicon dioxide using a vacuum thermal evaporator. Several material characterization techniques have been utilized to evaluate the structure, morphology, and optical properties of these films. Their optical constants (refractive index and extinction coefficient have been extracted from the spectroscopic ellipsometry (SE. X-ray reflectivity (XRR and atomic force microscopy (AFM were employed to determine the morphology and structure as well as the thickness and roughness of the PTCDI-C8 thin films. These films revealed a high degree of structural ordering within the layers. All the experimental measurements were performed under ambient conditions. PTCDI-C8 films have shown to endure ambient condition which allows pots-deposition characterization.

  1. Thickness and temperature dependence of electrical resistivity of p-type Bi0.5Sb1.5Te3 thin films prepared by flash evaporation method

    International Nuclear Information System (INIS)

    Duan Xingkai; Yang Junyou; Zhu, W; Fan, X A; Bao, S Q

    2006-01-01

    P-type Bi 0.5 Sb 1.5 Te 3 thin films with thicknesses in the range 80-320 nm have been deposited by the flash evaporation method on glass substrates at 473 K. XRD and field emission scanning electron microscope were performed to characterize the thin films. The results show that the thin films are polycrystalline and the grain size of the thin films increases with increasing thickness of the thin films. Compositional analysis of the thin films was also carried out by energy-dispersive x-ray analysis. A near linear relationship was observed between the electrical resistivity and the inverse thickness of the annealed thin films, and it agrees with Tellier's model. Electrical resistivity of the annealed thin films was studied in the temperature range 300-350 K, and their thermal activation behaviour was characterized, the activation energy for conduction decreases with increasing thickness of the thin films

  2. Structural, optical and magnetic properties of Mn diffusion-doped CdS thin films prepared by vacuum evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Aksu, S. [SoloPower, Inc., 5981 Optical Ct., San Jose, CA 95138 (United States); Bacaksiz, E., E-mail: eminb@ktu.edu.tr [Department of Physics, Karadeniz Technical University, 61080 Trabzon (Turkey); Parlak, M. [Department of Physics, Middle East Technical University, 06531 Ankara (Turkey); Yilmaz, S.; Polat, I.; Altunbas, M. [Department of Physics, Karadeniz Technical University, 61080 Trabzon (Turkey); Tuerksoy, M.; Topkaya, R. [Department of Physics, Gebze Institute of Technology, Gebze, 41400 Kocaeli (Turkey); Ozdogan, K. [Department of Physics, Yildiz Technical University, 34210 Istanbul (Turkey)

    2011-10-17

    Highlights: {yields} Cadmium sulphide thin films were deposited by vacuum evaporation. {yields} Elemental Mn was deposited onto CdS thin films by using electron beam evaporation and annealed under vacuum at different temperatures. {yields} Structural, optical and magnetic studies of Mn-doped CdS have been investigated. {yields} X-ray diffraction results showed that the undoped CdS film had a zinc-blende structure with a strong preferred orientation along the (1 1 1) direction. {yields} Magnetic measurements show that Mn-doped CdS thin films exhibit a ferromagnetism behavior at room temperature. - Abstract: The effect of Mn-doping on the vacuum deposited CdS thin films has been investigated by studying the changes in the structural, optical and magnetic properties of the films. A thin Mn layer evaporated on the CdS film surface served as the source layer for the diffusion doping. Doping was accomplished by annealing the CdS/Mn stack layers at the temperature range from 300 deg. C to 400 deg. C in step of 50 deg. C for 30 min under vacuum. The X-ray diffraction results showed that the undoped CdS film had a zinc-blende structure with a strong preferred orientation along the (1 1 1) direction. The incorporation of Mn did not cause any change in the texture but reduced the peak intensity and lead to a smaller crystallite size. Investigation of surface morphology using atomic force microscopy confirmed the decrease in the grain size with the Mn diffusion. In addition, a more uniform grain size distribution was observed in the doped films. X-ray photoelectron spectroscopy analysis showed that Mn atoms on the surface of the films were bounded to either sulphur or oxygen atoms. Auger electron spectroscopy of the diffusion-doped CdS sample at 350 deg. C indicated that the atomic Mn concentration was higher close to the surface region and Mn was distributed with a steadily decreasing profile through the bulk of the film with an average atomic concentration value around few

  3. Cu{sub 2}ZnSnS{sub 4} thin films grown by flash evaporation and subsequent annealing in Ar atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Caballero, R., E-mail: raquel.caballero@uam.es [Universidad Autónoma de Madrid, Departamento de Física Aplicada, M12, C/Francisco Tomás y Valiente 7, E-28049 Madrid (Spain); Izquierdo-Roca, V. [IREC, Catalonia Institute for Energy Research, C. Jardins de les Dones de Negre 1, Sant Adriá del Besòs, E-08930 Barcelona (Spain); Merino, J.M.; Friedrich, E.J. [Universidad Autónoma de Madrid, Departamento de Física Aplicada, M12, C/Francisco Tomás y Valiente 7, E-28049 Madrid (Spain); Climent-Font, A. [Universidad Autónoma de Madrid, Departamento de Física Aplicada, M12, C/Francisco Tomás y Valiente 7, E-28049 Madrid (Spain); CMAM, Universidad Autónoma de Madrid, C/Faraday 3, E-28049, Madrid (Spain); Saucedo, E. [IREC, Catalonia Institute for Energy Research, C. Jardins de les Dones de Negre 1, Sant Adriá del Besòs, E-08930 Barcelona (Spain); Pérez-Rodríguez, A. [IREC, Catalonia Institute for Energy Research, C. Jardins de les Dones de Negre 1, Sant Adriá del Besòs, E-08930 Barcelona (Spain); IN" 2UB, Departament d' Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, E-08028 Barcelona (Spain); León, M. [Universidad Autónoma de Madrid, Departamento de Física Aplicada, M12, C/Francisco Tomás y Valiente 7, E-28049 Madrid (Spain)

    2013-05-01

    A study of Cu{sub 2}ZnSnS{sub 4} thin films grown by flash evaporation and subsequently annealed in Ar atmosphere has been carried out. Prior to thin film deposition, Cu{sub 2}ZnSnS{sub 4} bulk compounds with stoichiometric and Zn-rich compositions were synthesized as evaporation sources. The characteristics of the bulk compounds and thin films were investigated by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and elastic back scattering. Cu{sub 2}ZnSnS{sub 4} deposited films contain lower concentrations of Zn than the bulk compounds used as evaporation sources, which is related to a preferential Zn re-evaporation during the deposition process. The desired kesterite composition for solar cell applications was achieved by using a Zn-rich compound as the evaporation source plus a thermal treatment at 620 °C in Ar atmosphere. - Highlights: ► Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films by flash evaporation + annealing in Ar atmosphere ► Difficulty of growing a single phase kesterite material ► X-ray diffraction and Raman spectroscopy to identify the different phases ► Importance of the starting film composition to get the desired CZTS material ► Annealing treatment to obtain the optimum material to be used for CZTS solar cells.

  4. Chemical states and optical properties of thermally evaporated Ge-Te and Ge-Sb-Te amorphous thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S.; Singh, D.; Shandhu, S. [Semiconductor Laboratory, Department of Physics, Guru Nanak Dev University Amritsar (India); Thangaraj, R., E-mail: rthangaraj@rediffmail.com [Semiconductor Laboratory, Department of Physics, Guru Nanak Dev University Amritsar (India)

    2012-07-15

    Thin amorphous films of Ge{sub 22}Sb{sub 22}Te{sub 56} and Ge{sub 50}Te{sub 50} have been prepared from their respective polycrystalline bulk on glass substrates by thermal evaporation technique. The amorphous nature of the films was checked with X-ray diffraction studies. Amorphous-to-crystalline transition of the films has been induced by thermal annealing and the structural phases have been identified by X-ray diffraction. The phase transformation temperature of the films was evaluated by temperature dependent sheet resistance measurement. The chemical structure of the amorphous films has been investigated using X-ray photoelectron spectroscopy and the role of Sb in phase change Ge{sub 22}Sb{sub 22}Te{sub 56} film is discussed. Survey and core level (Ge 3d, Te 3d, Te 4d, Sb 3p, Sb 3d, O 1s, C 1s) band spectra has been recorded and analyzed. For optical studies, the transmittance and the reflectance spectra were measured over the wavelength ranges 400-2500 nm using UV-vis-NIR spectroscopy. The optical band gap, refractive index and extinction coefficient are also presented for thermally evaporated amorphous thin films.

  5. Growth of manganese sulfide (α-MnS) thin films by thermal vacuum evaporation: Structural, morphological and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Hannachi, Amira, E-mail: amira.hannachi88@gmail.com [MALTA-Consolider Team, Institut de Ciència dels Materials – Departamento de Fisica Aplicada, University of Valencia, E-46100 Burjassot, Valencia (Spain); Université de Tunis El-Manar, Faculté des Sciences de Tunis, Laboratoire de Chimie Analytique et Electrochimie, LR99ES15, 2092 Tunis (Tunisia); Segura, Alfredo [MALTA-Consolider Team, Institut de Ciència dels Materials – Departamento de Fisica Aplicada, University of Valencia, E-46100 Burjassot, Valencia (Spain); Maghraoui-Meherzi, Hager [Université de Tunis El-Manar, Faculté des Sciences de Tunis, Laboratoire de Chimie Analytique et Electrochimie, LR99ES15, 2092 Tunis (Tunisia)

    2016-09-15

    MnS thin films have been successfully prepared by thermal evaporation method at different substrate temperatures using different masses of MnS powder. The prepared films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX) and UV–visible spectrophotometry. The XRD measurements show that the films crystallized in the pure α-MnS for substrate temperatures above 100 °C. The optical bandgap of thin films is found to be in the range of 3.2–3.3 eV. A factorial experimental design was used for determining the influence of the two experimental parameters on the films growth. - Highlights: • α-MnS films were deposited on glass and quartz substrates using the thermal evaporation technique. • The effect of substrate temperature on the properties of the MnS films has been studied. • The factorial design was used to determine the most influence parameters.

  6. Microbubble-Triggered Spontaneous Separation of Transparent Thin Films from Substrates Using Evaporable Core-Shell Nanocapsules.

    Science.gov (United States)

    Son, Intae; Lee, Byungsun; Kim, Jae Hong; Kim, Chunho; Yoo, Ji Yong; Ahn, Byung Wook; Hwang, Jeongho; Lee, Jonghyuk; Lee, Jun Hyup

    2018-05-23

    The spontaneous separation of a polymer thin film from a substrate is an innovative technology that will enable material recycling and reduce manufacturing cost in the film industry, and this can be applied in a wide range of applications, from optical films to wearable devices. Here, we present an unprecedented spontaneous strategy for separating transparent polymer films from substrates on the basis of microbubble generation using nanocapsules containing an evaporable material. The core-shell nanocapsules are prepared from poly(methyl methacrylate)-polyethyleneimine nanoparticles via the encapsulation of methylcyclohexane (MCH). A spherical nanostructure with a vaporizable core is obtained, with the heat-triggered gas release ability leading to the formation of microbubbles. Our separation method applied to transparent polymer films doped with a small amount of the nanocapsules encapsulating evaporable MCH enables spontaneous detachment of thin films from substrates via vacuum-assisted rapid vaporization of MCH over a short separation time, and clear detachment of the film is achieved with no deterioration of the inherent optical transparency and adhesive property compared to a pristine film.

  7. Temperature responsive functional polymeric thin films obtained by matrix assisted pulsed laser evaporation for cells attachment–detachment study

    Energy Technology Data Exchange (ETDEWEB)

    Rusen, L. [NILPRP, National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Street, PO Box MG-16, RO-077125 Magurele, Bucharest (Romania); Dinca, V., E-mail: dinali@nipne.ro [NILPRP, National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Street, PO Box MG-16, RO-077125 Magurele, Bucharest (Romania); Mitu, B. [NILPRP, National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Street, PO Box MG-16, RO-077125 Magurele, Bucharest (Romania); Mustaciosu, C. [Horia Hulubei National Institute of Physics and Nuclear Engineering, IFIN HH, Magurele, Bucharest (Romania); Dinescu, M. [NILPRP, National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Street, PO Box MG-16, RO-077125 Magurele, Bucharest (Romania)

    2014-05-01

    Multifunctional thin films used as thermoresponsive substrate for engineering cell sheets represent an important area in tissue engineering. As the morphology and the chemical characteristics of the thin films directly control their interaction with cells, it is important to correlate these characteristics with the biological answer. In this study, thermally sensitive poly(N-isopropylacrylamide), (pNIPAAm) thin films were prepared by matrix assisted pulsed laser evaporation and utilized in L929 cell adhesion and detachment studies. Fourier transform infrared spectroscopy (FTIR) and atomic force microscopy (AFM) were used to determine the pNIPAAm thin films chemical and morphological characteristics. The FTIR data demonstrated that the functional groups in the MAPLE-deposited films remained intact for fluences in the range of 200–600 mJ cm{sup −2}. Within this fluence range, the AFM topographical studies showed that the roughness of the coatings was dependent on laser fluence and the obtained surfaces were characterized by a granular aspect. L929 cell viability studies onto the pNIPAAm coatings showed little or no toxic effect for fluences below 600 mJ cm{sup −2}, while for higher fluences, viability was decreased with more than 50%. The adhesion and detachment of the cell was found to be mainly dependent on the film surface morphology.

  8. SnS absorber thin films by co-evaporation: Optimization of the growth rate and influence of the annealing

    Energy Technology Data Exchange (ETDEWEB)

    Robles, Víctor, E-mail: victor.robles@ciemat.es; Trigo, Juan Francisco; Guillén, Cecilia; Herrero, José

    2015-05-01

    Tin sulfide thin films were prepared by co-evaporation on soda-lime glass substrates, for use as absorber layers. The synthesis was carried out at 350 °C substrate temperature and varying the growth rate in the 2-6 Å/s range, adjusting the deposition time in order to obtain thicknesses in the 700-1500 nm range. After evaporation, the samples were heated at 400 °C and 500 °C under various atmospheres. The evolution of the morphological, structural and optical properties has been analyzed as a function of the thickness and deposition rate, before and after annealing. For the samples grown at the lowest rate, SnS and Sn{sub 2}S{sub 3} phase mixing has been observed by X-ray diffraction. Samples with reduced thickness preferably crystallize in the SnS phase, whereas thicker layers become richer in the Sn{sub 2}S{sub 3} phase. The sulfur treatment of samples prepared at the lowest rate results in the formation of SnS{sub 2} phase. Otherwise, the samples obtained at the highest rates show single-phase SnS after heating at 400 °C in sulfur atmosphere, with gap energy values around 1.24 eV. - Highlights: • Tin sulfide thin films were deposited by co-evaporation at different growth rates. • The influence of the growth rate and post-annealing at different conditions was studied. • The SnS phase was obtained by optimizing the growth rate and the annealing process. • The SnS phase presented properties for use as absorber layer.

  9. Structure, surface morphology and electrical properties of evaporated Ni thin films: Effect of substrates, thickness and Cu underlayer

    International Nuclear Information System (INIS)

    Hemmous, M.; Layadi, A.; Guittoum, A.; Souami, N.; Mebarki, M.; Menni, N.

    2014-01-01

    Series of Ni thin films have been deposited by thermal evaporation onto glass, Si(111), Cu, mica and Al 2 O 3 substrates with and without a Cu underlayer. The Ni thicknesses, t, are in the 4 to 163 nm range. The Cu underlayer has also been evaporated with a Cu thickness equal to 27, 52 and 90 nm. The effects of substrate, the Ni thickness and the Cu underlayer on the structural and electrical properties of Ni are investigated. Rutherford Backscattering Spectroscopy was used to probe the Ni/Substrate and Ni–Cu underlayer interfaces and to measure both Ni and Cu thicknesses. The texture, the strain and the grain size values were derived from X-ray diffraction experiments. The surface morphology is studied by means of a Scanning Electron Microscope. The electrical resistivity is measured by the four point probe. The Ni films grow with the <111> texture on all substrates. The Ni grain sizes D increase with increasing thickness for the glass, Si and mica substrates and decrease for the Cu one. The strain ε is positive for low thickness, decreases in magnitude and becomes negative as t increases. With the Cu underlayer, the growth mode goes through two phases: first, the stress (grain size) increases (decreases) up to a critical thickness t Cr , then stress is relieved and grain size increases. All these results will be discussed and correlated. - Highlights: • The structural and electrical properties of evaporated Ni thin films are studied. • The effect of thickness, substrates and Cu underlayer is investigated. • Texture, grain size, strain and surface morphology are discussed. • Growth modes are described as a function of Ni thickness

  10. Optical properties of Cd Se thin films obtained by pyrolytic dew; Propiedades opticas de peliculas delgadas de CdSe obtenidas por rocio pirolitico

    Energy Technology Data Exchange (ETDEWEB)

    Perez G, A.M. [UPAEP, 72160 Puebla (Mexico); Tepantlan, C.S. [UPT, 43626 Tulancingo, Hidalgo (Mexico); Renero C, F. [INAOE, 72840 Puebla (Mexico)

    2006-07-01

    In this paper the optical properties of Cd Se thin films obtained by spray pyrolysis are presented. The films are prepared by Sodium Seleno sulphate (Na{sub 2}SSeO{sub 3}) and Cadmium Chloride (CdC{sub 12}) mixing in aqueous environment. Optical parameters of the films (refractive index, absorption coefficient and optical ban gap) were calculated from transmittance spectra. The obtained values of the optical ban gap are compared with the result obtained by other deposition method. (Author)

  11. Synthesis and characterisation of co-evaporated tin sulphide thin films

    Science.gov (United States)

    Koteeswara Reddy, N.; Ramesh, K.; Ganesan, R.; Ramakrishna Reddy, K. T.; Gunasekhar, K. R.; Gopal, E. S. R.

    2006-04-01

    Tin sulphide films were grown at different substrate temperatures by a thermal co-evaporation technique. The crystallinity of the films was evaluated from X-ray diffraction studies. Single-phase SnS films showed a strong (040) orientation with an orthorhombic crystal structure and a grain size of 0.12 μm. The films showed an electrical resistivity of 6.1 Ω cm with an activation energy of 0.26 eV. These films exhibited an optical band gap of 1.37 eV and had a high optical absorption coefficient (>104 cm-1) above the band-gap energy. The results obtained were analysed to evaluate the potentiality of the co-evaporated SnS films as an absorber layer in solar photovoltaic devices.

  12. Novel Evaporation Process for Deposition of Kesterite Thin Films Synthesized by Solvothermal Method

    Directory of Open Access Journals (Sweden)

    J. A. Estrada-Ayub

    2017-01-01

    Full Text Available Kesterite, a quaternary compound of Cu2ZnSnS4, is a promising option as a material absorber to reduce the cost of photovoltaic solar cells. The solvothermal method is a way to synthesize nanoparticles of this material. In this work, once synthesized, particles were deposited on a substrate through evaporation, and their morphological, structural, and optical properties were studied. Results show that changes of precursor ratios during solvothermal synthesis result in a modification of particle morphology but not on its size. The deposition of already synthesized kesterite through evaporation preserves kesterite structure and permits the formation of a homogenous film on a substrate. Optical reflectance and transmittance measurements allowed estimating the band-gap energy between 1.41 and 1.46 eV for representative samples, which is near the optimum for the absorber material.

  13. Effect of deposition temperature on the structural and optical properties of CdSe thin films synthesised by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mohammed, Mudhafer Ali [Department of Applied Sciences, University of Technology / Baghdad (Iraq); Jamil, Shatha Shammon Batros [Ministry of Science and Technology / Baghdad (Iraq)

    2013-12-16

    Cadmium selenide thin films were synthesized on glass substrates using chemical bath technique (CBD) at temperatures 320K, 330K, 340K,and 350K. The polycrystalline nature of the material was confirmed by X-ray diffraction technique and various structural parameters such as lattice parameters, grain size, dislocation density, and micro strain. The root mean square (RMS) roughness was obtained by using atomic force microscopy(AFM), which indicated a decreasing average roughness with the decrease of the bath temperature. Optical properties were carried out by UV-Visible transmittance spectra, and the band gap energy was determined.

  14. Electrical properties and surface morphology of electron beam evaporated p-type silicon thin films on polyethylene terephthalate for solar cells applications

    Science.gov (United States)

    Ang, P. C.; Ibrahim, K.; Pakhuruddin, M. Z.

    2015-04-01

    One way to realize low-cost thin film silicon (Si) solar cells fabrication is by depositing the films with high-deposition rate and manufacturing-compatible electron beam (e-beam) evaporation onto inexpensive foreign substrates such as glass or plastic. Most of the ongoing research is reported on e-beam evaporation of Si films on glass substrates to make polycrystalline solar cells but works combining both e-beam evaporation and plastic substrates are still scarce in the literature. This paper studies electrical properties and surface morphology of 1 µm electron beam evaporated Al-doped p-type silicon thin films on textured polyethylene terephthalate (PET) substrate for application as an absorber layer in solar cells. In this work, Si thin films with different doping concentrations (including an undoped reference) are prepared by e-beam evaporation. Energy dispersion X-ray (EDX) showed that the Si films are uniformly doped by Al dopant atoms. With increased Al/Si ratio, doping concentration increased while both resistivity and carrier mobility of the films showed opposite relationships. Root mean square (RMS) surface roughness increased. Overall, the Al-doped Si film with Al/Si ratio of 2% (doping concentration = 1.57×1016 atoms/cm3) has been found to provide the optimum properties of a p-type absorber layer for fabrication of thin film Si solar cells on PET substrate.

  15. Electrical properties and surface morphology of electron beam evaporated p-type silicon thin films on polyethylene terephthalate for solar cells applications

    Energy Technology Data Exchange (ETDEWEB)

    Ang, P. C.; Ibrahim, K.; Pakhuruddin, M. Z. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, Minden 11800 Penang (Malaysia)

    2015-04-24

    One way to realize low-cost thin film silicon (Si) solar cells fabrication is by depositing the films with high-deposition rate and manufacturing-compatible electron beam (e-beam) evaporation onto inexpensive foreign substrates such as glass or plastic. Most of the ongoing research is reported on e-beam evaporation of Si films on glass substrates to make polycrystalline solar cells but works combining both e-beam evaporation and plastic substrates are still scarce in the literature. This paper studies electrical properties and surface morphology of 1 µm electron beam evaporated Al-doped p-type silicon thin films on textured polyethylene terephthalate (PET) substrate for application as an absorber layer in solar cells. In this work, Si thin films with different doping concentrations (including an undoped reference) are prepared by e-beam evaporation. Energy dispersion X-ray (EDX) showed that the Si films are uniformly doped by Al dopant atoms. With increased Al/Si ratio, doping concentration increased while both resistivity and carrier mobility of the films showed opposite relationships. Root mean square (RMS) surface roughness increased. Overall, the Al-doped Si film with Al/Si ratio of 2% (doping concentration = 1.57×10{sup 16} atoms/cm{sup 3}) has been found to provide the optimum properties of a p-type absorber layer for fabrication of thin film Si solar cells on PET substrate.

  16. Study of optical properties of vacuum evaporated carbon nanotube containing Se80Te16Cu4 thin films

    Science.gov (United States)

    Upadhyay, A. N.; Tiwari, R. S.; Singh, Kedar

    2016-08-01

    Thin films of Se80Te16Cu4 glassy alloy and 3 wt.% of carbon nanotubes (CNTs) containing Se80Te16Cu4 glassy composite were deposited on clean glass substrate by thermal evaporation technique. The scanning electron microscope and energy dispersive x-ray analysis were performed to investigate the surface morphology and elemental composition of as synthesised samples. The reflectance and transmittance spectra of as-deposited thin films were recorded (200-1100 nm) by using UV/VIS/NIR spectrophotometer. The optical band gap and optical constants such as absorption coefficient (α), refractive index (n) and extinction coefficient (k) of Se80Te16Cu4 and 3 wt.% CNTs-Se80Te16Cu4 glassy composite thin films were calculated. It is observed that optical properties alter due to CNTs incorporation in Se80Te16Cu4 glassy alloy. Effect on optical properties due to CNTs incorporation can be explained in terms of concentration of unsaturated bonds/defects in the localised states.

  17. Photo- and Electrochromic Properties of Activated Reactive Evaporated MoO3 Thin Films Grown on Flexible Substrates

    Directory of Open Access Journals (Sweden)

    K. Hari Krishna

    2008-01-01

    Full Text Available The molybdenum trioxide (MoO3 thin films were grown onto ITO-coated flexible Kapton substrates using plasma assisted activated reactive evaporation technique. The film depositions were carried out at constant glow power and oxygen partial pressures of 8 W and 1×10−3 Torr, respectively. The influence of substrate temperature on the microstructural and optical properties was investigated. The MoO3 thin films prepared at a substrate temperature of 523 K were found to be composed of uniformly distributed nanosized grains with an orthorhombic structure of α-MoO3. These nanocrystalline MoO3 thin films exhibited higher optical transmittance of about 80% in the visible region with an evaluated optical band gap of 3.29 eV. With the insertion of 12.5 mC/cm2, the films exhibited an optical modulation of 40% in the visible region with coloration efficiency of 22 cm2/C at the wavelength of 550 nm. The MoO3 films deposited at 523 K demonstrated better photochromic properties and showed highest color center concentration for the irradiation time of 30 minutes at 100 mW/cm2.

  18. Effect of substrate temperatures on the optical properties of evaporated Sc2O3 thin films

    International Nuclear Information System (INIS)

    Liu Guanghui; Jin Yunxia; He Hongbo; Fan Zhengxiu

    2010-01-01

    Scandium oxide (Sc 2 O 3 ) films were deposited by electron beam evaporation with substrate temperatures varying from 50 to 350 o C. X-ray diffraction, scanning electron microscopy, spectrometer, and optical profilograph were employed to investigate the structural and optical properties of the films. The refractive index and extinction coefficient were calculated from the transmittance and reflectance spectra, and then the energy band gaps were deduced and discussed. Laser induced damage threshold of the films were also characterized. Optical and structural properties of Sc 2 O 3 films were found to be sensitive to substrate temperature.

  19. Strength, stiffness, and microstructure of Cu(In,Ga)Se2 thin films deposited via sputtering and co-evaporation

    International Nuclear Information System (INIS)

    Luo, Shi; Jang, Dongchan; Greer, Julia R.; Lee, Jiun-Haw; Liu, Chee-Wee; Shieh, Jia-Min; Shen, Chang-Hong; Wu, Tsung-Ta

    2014-01-01

    This work examines Cu(In,Ga)Se 2 thin films fabricated by (1) selenization of pre-sputtered Cu-In-Ga and (2) co-evaporation of each constituent. The efficiency disparity between films deposited via these two methods is linked to differences in morphology and microstructure. Atomic force microscopy and scanning electron microscopy show that selenized films have rougher surfaces and poor adhesion to molybdenum back contact. Transmission electron microscopy and electron energy loss spectroscopy revealed multiple voids near the Mo layer in selenized films and a depletion of Na and Se around the voids. Residual stresses in co-evaporated films were found to be ∼1.23 GPa using wafer curvature measurements. Uniaxial compression experiments on 500 nm-diameter nanopillars carved out from co-evaporated films revealed the elastic modulus of 70.4 ± 6.5 GPa. Hertzian contact model applied to nanoindentation data on selenized films revealed the indentation modulus of 68.9 ± 12.4 GPa, which is in agreement with previous reports. This equivalence of the elastic moduli suggests that microstructural differences manifest themselves after the yield point. Typical plastic behavior with two distinct failure modes is observed in the extracted stress-strain results, with the yield strength of 640.9 ± 13.7 MPa for pillars that failed by shearing and 1100.8 ± 77.8 MPa for pillars that failed by shattering.

  20. Impact of additional sulphur on structure, morphology and optical properties of SnS thin films by thermal evaporation

    Science.gov (United States)

    Banotra, Arun; Padha, Naresh; Kumar, Shiv; Kapoor, Ashok K.

    2018-05-01

    Thin films of SnS have been obtained from Sn and S powders which were mixed up using ball mill technique with and without evaporating additional sulphur prior to annealing at 523K. The obtained samples were taken for structural, optical, chemical and morphological studies. The X-ray diffraction reveals the formation of SnS phase on annealing in vacuum having S/Sn ratio of 0.67 obtained from EDAX. This deficit in `S' is removed by supplementing additional `S' of 200nm prior to annealing which results in the S/Sn ratio of 1.01. The optical transmission recorded from spectrophotometer used to study different optical parameters. Morphological results corroborate well with the XRD, EDAX and optical study. The obtained stoichiometric films were also tested for Ag/p-SnS Schottky diodes on In coated glass substrates using current voltage measurements.

  1. Thermoelectric properties of V{sub 2}O{sub 5} thin films deposited by thermal evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Santos, R.; Loureiro, J., E-mail: joa.loureiro@gmail.com; Nogueira, A.; Elangovan, E.; Pinto, J.V.; Veiga, J.P.; Busani, T.; Fortunato, E.; Martins, R.; Ferreira, I., E-mail: imf@fct.unl.pt

    2013-10-01

    This work reports the structural, optical, electrical and thermoelectric properties of vanadium pentoxide (V{sub 2}O{sub 5}) thin films deposited at room temperature by thermal evaporation on Corning glass substrates. A post-deposition thermal treatment up to 973 K under atmospheric conditions induces the crystallization of the as-deposited amorphous films with an orthorhombic V{sub 2}O{sub 5} phase with grain sizes around 26 nm. As the annealing temperature rises up to 773 K the electrical conductivity increases. The films exhibit thermoelectric properties with a maximum Seebeck coefficient of −218 μV/K and electrical conductivity of 5.5 (Ω m){sup −1}. All the films show NIR-Vis optical transmittance above 60% and optical band gap of 2.8 eV.

  2. Characterization of CuIn1-xAlxS2 thin films prepared by thermal evaporation

    International Nuclear Information System (INIS)

    Smaili, F.; Kanzari, M.; Rezig, B.

    2008-01-01

    Ingots containing single crystals of the quaternary alloys CuIn 1-x Al x S 2 (CIAS) were grown by a horizontal Bridgman method for compositions with x = 0, 0.2 and x = 0.4. (CIAS) thin films were prepared by thermal evaporation technique on to glass substrates. Structural and optical properties of the films were studied in function of the Al content. Band gap, and absorption coefficients were determined from the analysis of the optical spectra (transmittance and reflectance as a function of wavelength) recorded by a spectrophotometer. The samples have direct bandgap energies of 1.95 eV (x = 0), 2.06 eV (x = 0,2) and 2.1 eV (x = 0,4). These optical results were correlated with the structural analysis by X-Ray diffraction

  3. Synthesis of a large-sized mesoporous phosphosilicate thin film through evaporation-induced polymeric micelle assembly.

    Science.gov (United States)

    Li, Yunqi; Bastakoti, Bishnu Prasad; Imura, Masataka; Suzuki, Norihiro; Jiang, Xiangfen; Ohki, Shinobu; Deguchi, Kenzo; Suzuki, Madoka; Arai, Satoshi; Yamauchi, Yusuke

    2015-01-01

    A triblock copolymer, poly(styrene-b-2-vinyl pyridine-b-ethylene oxide) (PS-b-P2VP-b-PEO) was used as a soft template to synthesize large-sized mesoporous phosphosilicate thin films. The kinetically frozen PS core stabilizes the micelles. The strong interaction of the inorganic precursors with the P2VP shell enables the fabrication of highly robust walls of phosphosilicate and the PEO helps orderly packing of the micelles during solvent evaporation. The molar ratio of phosphoric acid and tetraethyl orthosilicate is crucial to achieve the final mesostructure. The insertion of phosphorus species into the siloxane network is studied by (29) Si and (31) P MAS NMR spectra. The mesoporous phosphosilicate films exhibit steady cell adhesion properties and show great promise as excellent materials in bone-growth engineering applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Growth of high quality large area MgB2 thin films by reactive evaporation

    OpenAIRE

    Moeckly, Brian H.; Ruby, Ward S.

    2006-01-01

    We report a new in-situ reactive deposition thin film growth technique for the production of MgB2 thin films which offers several advantages over all existing methods and is the first deposition method to enable the production of high-quality MgB2 films for real-world applications. We have used this growth method, which incorporates a rotating pocket heater, to deposit MgB2 films on a variety of substrates, including single-crystalline, polycrystalline, metallic, and semiconductor materials u...

  5. Investigation on thermal evaporated CH3NH3PbI3 thin films

    Directory of Open Access Journals (Sweden)

    Youzhen Li

    2015-09-01

    Full Text Available CH3NH3I, PbI2 and CH3NH3PbI3 films were fabricated by evaporation and characterized with X-ray Photoelectron Spectroscopy (XPS and X-ray diffraction (XRD. The XPS results indicate that the PbI2 and CH3NH3PbI3 films are more uniform and stable than the CH3NH3I film. The atomic ratio of the CH3NH3I, PbI2 and CH3NH3PbI3 films are C:N:I=1.00:1.01:0.70, Pb:I= 1.00:1.91 and C: N: Pb: I = 1.29:1.07:1.00:2.94, respectively. The atomic ratio of CH3NH3PbI3 is very close to that of the ideal perovskite. Small angle x-ray diffraction results demonstrate that the as evaporated CH3NH3PbI3 film is crystalline. The valence band maximum (VBM and work function (WF of the CH3NH3PbI3 film are about 0.85eV and 4.86eV, respectively.

  6. Effect of vacuum annealing on evaporated pentacene thin films for memory device applications

    International Nuclear Information System (INIS)

    Gayathri, A.G.; Joseph, C.M.

    2016-01-01

    Graphical abstract: Switching of ITO/pentacene/Al thin films for different annealing temperatures. - Highlights: • Memory device performance in pentacene improved considerably with annealing. • ON/OFF ratio of the pentacene device increases due to annealing. • Threshold voltage reduces from 2.55 V to 1.35 V due to annealing. • Structure of pentacene thin films is also dependent on annealing temperature. - Abstract: Thin films of pentacene were deposited thermally onto glass substrates and annealed at 323 K, 373 K, 423 K, 473 K and 523 K in high vacuum. Effect of annealing on the morphological and structural properties of these films was studied. X-ray diffraction patterns confirmed the crystalline nature of the films. Electrical studies for the use as write once read many (WORM) memory devices were done for the vacuum deposited pentacene thin films on indium tin oxide coated glass. Due to annealing, a sharp increase in the ON/OFF ratio of current and a decrease in threshold voltage were observed at around 373 K. This device showed a stable switching with an ON/OFF current ratio as high as 10 9 and a switching threshold voltage of 1.35 V. The performance of the device degraded above 423 K due to the changes in the crystallinity of the film.

  7. The Effects of Strain on the Electrical Properties of Thin Evaporated Films of Semiconductor Compounds

    Science.gov (United States)

    Steel, G. G.

    1970-01-01

    Reports on project intended to establish how electrical resistance, Hall voltage, and magnetoresistance change when a thin film specimen is subjected to mechanical strain. Found resistance of semiconducting film of indium arsenide and indium antimonide decreases with tension and increases with compression. (LS)

  8. Effect of vacuum annealing on evaporated pentacene thin films for memory device applications

    Energy Technology Data Exchange (ETDEWEB)

    Gayathri, A.G., E-mail: gaythri305@yahoo.com; Joseph, C.M., E-mail: cmjoseph@rediffmail.com

    2016-09-15

    Graphical abstract: Switching of ITO/pentacene/Al thin films for different annealing temperatures. - Highlights: • Memory device performance in pentacene improved considerably with annealing. • ON/OFF ratio of the pentacene device increases due to annealing. • Threshold voltage reduces from 2.55 V to 1.35 V due to annealing. • Structure of pentacene thin films is also dependent on annealing temperature. - Abstract: Thin films of pentacene were deposited thermally onto glass substrates and annealed at 323 K, 373 K, 423 K, 473 K and 523 K in high vacuum. Effect of annealing on the morphological and structural properties of these films was studied. X-ray diffraction patterns confirmed the crystalline nature of the films. Electrical studies for the use as write once read many (WORM) memory devices were done for the vacuum deposited pentacene thin films on indium tin oxide coated glass. Due to annealing, a sharp increase in the ON/OFF ratio of current and a decrease in threshold voltage were observed at around 373 K. This device showed a stable switching with an ON/OFF current ratio as high as 10{sup 9} and a switching threshold voltage of 1.35 V. The performance of the device degraded above 423 K due to the changes in the crystallinity of the film.

  9. Optoelectronic properties of cadmium sulfide thin films deposited by thermal evaporation technique

    International Nuclear Information System (INIS)

    Ali, N.; Iqbal, M.A.; Hussain, S.T.; Waris, M.; Munair, S.A.

    2011-01-01

    The substrate temperature in depositions of thin films plays a vital role in the characteristics of deposited films. We studied few characteristics of cadmium sulphide thin film deposited at different temperature (150 deg. C- 300 deg. C) on corning 7059 glass substrate. We measured transmittance, absorbance, band gap and reflectance via UV spectroscopy. It was found that the transmittance for 300 nm to 1100 nm was greater than 80%. The resistivity and mobility was calculated by Vander Pauw method which were 10-80 cm and 2-60 cm/sup 2/V/sup -1/S/sup -1/ respectively. The thermoelectric properties of the film were measured by hot and cold probe method which shows the N-type nature of the film. (author)

  10. Optical and structural properties of CuSbS2 thin films grown by thermal evaporation method

    International Nuclear Information System (INIS)

    Rabhi, A.; Kanzari, M.; Rezig, B.

    2009-01-01

    Structural, optical and electrical properties of CuSbS 2 thin films grown by thermal evaporation have been studied relating the effects of substrate heating conditions of these properties. The CuSbS 2 thin films were carried out at substrate temperatures in the temperature range 100-200 deg. C . The structure and composition were characterized by XRD, SEM and EDX. X-ray diffraction revealed that the films are (111) oriented upon substrate temperature 170 deg. C and amorphous for the substrate temperatures below 170 deg. C . No secondary phases are observed for all the films. The optical absorption coefficients and band gaps of the films were estimated by optical transmission and reflection measurements at room temperature. Strong absorption coefficients in the range 10 5 -10 6 cm -1 at 500 nm were found. The direct gaps Eg lie between 0.91-1.89 eV range. It is observed that there is a decrease in optical band gap Eg with increasing the substrate temperature. Resistivity of 0.03-0.96 Ω cm, in dependence on substrate temperature was characterized. The all unheated films exhibit p-type conductivity. The characteristics reported here also offer perspective for CuSbS 2 as an absorber material in solar cells applications

  11. Effect of substrate temperature on the optical parameters of thermally evaporated Ge-Se-Te thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Pankaj, E-mail: pks_phy@yahoo.co.i [Department of Physics, Jaypee University of Information Technology, Waknaghat, Solan, H.P. 173215 India (India); Katyal, S.C. [Department of Physics, Jaypee University of Information Technology, Waknaghat, Solan, H.P. 173215 India (India)

    2009-05-01

    Thin films of Ge{sub 10}Se{sub 90-x}Te{sub x} (x = 0, 10, 20, 30, 40, 50) glassy alloys were deposited at three substrate temperatures (303 K, 363 K and 423 K) using conventional thermal evaporation technique at base pressure of {approx} 10{sup -4} Pa. X-ray diffraction results show that films deposited at 303 K are of amorphous nature while films deposited at 363 K and 423 K are of polycrystalline nature. The optical parameters, refractive index and optical gap have been derived from the transmission spectra (using UV-Vis-NIR spectrophotometer) of the thin films in the spectral region 400-1500 nm. This has been observed that refractive index values remain almost constant while the optical gap is found to decrease considerably with the increase of substrate temperature. The decrease in optical gap is explained on the basis of change in nature of films, from amorphous to polycrystalline state, with the increase of substrate temperature. The optical gap has also been observed to decrease with the increase of Te content.

  12. Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser

    Energy Technology Data Exchange (ETDEWEB)

    Yun, J., E-mail: j.yun@unsw.edu.au; Varalmov, S.; Huang, J.; Green, M. A. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia); Kim, K. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia); Suntech R and D Australia, Botany, New South Wales 2019 (Australia)

    2014-06-16

    The effects of the deposition temperature on the microstructure, crystallographic orientation, and electrical properties of a 10-μm thick evaporated Si thin-film deposited on glass and crystallized using a diode laser, are investigated. The crystallization of the Si thin-film is initiated at a deposition temperature between 450 and 550 °C, and the predominant (110) orientation in the normal direction is found. Pole figure maps confirm that all films have a fiber texture and that it becomes stronger with increasing deposition temperature. Diode laser crystallization is performed, resulting in the formation of lateral grains along the laser scan direction. The laser power required to form lateral grains is higher in case of films deposited below 450 °C for all scan speeds. Pole figure maps show 75% occupancies of the (110) orientation in the normal direction when the laser crystallized film is deposited above 550 °C. A higher density of grain boundaries is obtained when the laser crystallized film is deposited below 450 °C, which limits the solar cell performance by n = 2 recombination, and a performance degradation is expected due to severe shunting.

  13. Improving the performance of organic thin film transistors formed on a vacuum flash-evaporated acrylate insulator

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Z., E-mail: ziqian.ding@materials.ox.ac.uk; Abbas, G. A.; Assender, H. E. [Department of Materials, University of Oxford, Oxford OX1 3PH (United Kingdom); Morrison, J. J.; Sanchez-Romaguera, V.; Yeates, S. G. [School of Chemistry, University of Manchester, Manchester M13 9PL (United Kingdom); Taylor, D. M. [School of Electronic Engineering, Bangor University, Bangor LL57 1UT (United Kingdom)

    2013-12-02

    A systematic investigation has been undertaken, in which thin polymer buffer layers with different ester content have been spin-coated onto a flash-evaporated, cross-linked diacrylate gate-insulator to form bottom-gate, top-contact organic thin-film transistors. The highest device mobilities, ∼0.65 cm{sup 2}/V s and ∼1.00 cm{sup 2}/V s for pentacene and dinaphtho[2,3-b:2′,3′-f]-thieno[3,2-b]thiophene (DNTT), respectively, were only observed for a combination of large-grain (∼1–2 μm) semiconductor morphology coupled with a non-polar dielectric surface. No correlation was found between semiconductor grain size and dielectric surface chemistry. The threshold voltage of pentacene devices shifted from −10 V to −25 V with decreasing surface ester content, but remained close to 0 V for DNTT.

  14. Optical properties of silver sulphide thin films formed on evaporated Ag by a simple sulphurization method

    Energy Technology Data Exchange (ETDEWEB)

    Barrera-Calva, E., E-mail: ebc@xanum.uam.m [Departamento de Ingenieria de Procesos e hidraulica, Universidad Autonoma Metropolitana - Iztapalapa, Av. Purisima Esq. Michoacan, Col. Vicentina, Mexico, D.F., 09340 (Mexico); Ortega-Lopez, M.; Avila-Garcia, A.; Matsumoto-Kwabara, Y. [Departamento de Ingenieria Electrica, Centro de Investigacion y de Estudios Avanzados del IPN, Mexico DF 07360 (Mexico)

    2010-01-31

    Silver sulphide (Ag{sub 2}S) thin films were grown on the surface of silver films (Ag) deposited on glass substrate by using a simple chemical sulphurization method. According to X-ray diffraction analysis, the Ag{sub 2}S thin films display low intensity peaks at 34.48{sup o}, 36.56{sup o}, and 44.28{sup o}, corresponding to diffraction from (100), (112) and (103) planes of the acanthite phase (monoclinic). A model of the type Ag{sub 2}S/Ag/glass was deduced from spectroscopic ellipsometric measurements. Also, the optical constants (n, k) of the system were determined. Furthermore, the optical properties as solar selective absorber for collector applications were assessed. The optical reflectance of the Ag{sub 2}S/Ag thin film systems exhibits the expected behavior for an ideal selective absorber, showing a low reflectance in the wavelength range below 2 {mu}m and a high reflectance for wavelengths higher than that value. An absorptance about 70% and an emittance about 3% or less were calculated for several samples.

  15. {11-bar 01} twin dislocation structures in evaporated titanium thin films

    International Nuclear Information System (INIS)

    Bursill, L.A.; Peng, Julin; Fan, Xudong; Kasukabe, Y.; Yamada, Y.

    1995-01-01

    High-resolution transmission electron micrographs of { 11-bar 01} interfacial twin dislocations in Ti thin films are reexamined. Computer simulations of the experimental images were obtained using atomic models deduced by Pond, Bacon and Serra (Phil Mag Letts, 1995). Two twin dislocations were analysed, with step heights of 4 x d(K 1 ) and 2 x d (K 1 ), where d(K 1 ) is the spacing of the { 11-bar 01 } planes. Reasonable agreement with the predicted structures was obtained at about 0.17nm resolution. 10 refs., 2 figs

  16. Thin film evolution equations from (evaporating) dewetting liquid layers to epitaxial growth

    International Nuclear Information System (INIS)

    Thiele, U

    2010-01-01

    In the present contribution we review basic mathematical results for three physical systems involving self-organizing solid or liquid films at solid surfaces. The films may undergo a structuring process by dewetting, evaporation/condensation or epitaxial growth, respectively. We highlight similarities and differences of the three systems based on the observation that in certain limits all of them may be described using models of similar form, i.e. time evolution equations for the film thickness profile. Those equations represent gradient dynamics characterized by mobility functions and an underlying energy functional. Two basic steps of mathematical analysis are used to compare the different systems. First, we discuss the linear stability of homogeneous steady states, i.e. flat films, and second the systematics of non-trivial steady states, i.e. drop/hole states for dewetting films and quantum-dot states in epitaxial growth, respectively. Our aim is to illustrate that the underlying solution structure might be very complex as in the case of epitaxial growth but can be better understood when comparing the much simpler results for the dewetting liquid film. We furthermore show that the numerical continuation techniques employed can shed some light on this structure in a more convenient way than time-stepping methods. Finally we discuss that the usage of the employed general formulation does not only relate seemingly unrelated physical systems mathematically, but does allow as well for discussing model extensions in a more unified way.

  17. Investigation of nanocrystalline thin cobalt films thermally evaporated on Si(100) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Kozłowski, W., E-mail: wkozl@std2.phys.uni.lodz.pl [Department of Solid State Physics, Faculty of Physics and Applied Informatics, University of Łódź, Pomorska 149/153, 90-236 Łódź (Poland); Balcerski, J.; Szmaja, W. [Department of Solid State Physics, Faculty of Physics and Applied Informatics, University of Łódź, Pomorska 149/153, 90-236 Łódź (Poland); Piwoński, I. [Department of Materials Technology and Chemistry, Faculty of Chemistry, University of Łódź, Pomorska 163, 90-236 Łódź (Poland); Batory, D. [Institute of Materials Science and Engineering, Łódź University of Technology, Stefanowskiego 1/15, 90-924 Łódź (Poland); Miękoś, E. [Department of Inorganic and Analytical Chemistry, Faculty of Chemistry, University of Łódź, Tamka 12, 91-403 Łódź (Poland); and others

    2017-03-15

    We have made a quantitative study of the morphological and magnetic domain structures of 100 nm thick nanocrystalline cobalt films thermally evaporated on naturally oxidized Si(100) substrates. The morphological structure is composed of densely packed grains with the average grain size (35.6±0.8) nm. The grains exhibit no geometric alignment and no preferred elongation on the film surface. In the direction perpendicular to the film surface, the grains are aligned in columns. The films crystallize mainly in the hexagonal close-packed phase of cobalt and possess a crystallographic texture with the hexagonal axis perpendicular to the film surface. The magnetic domain structure consists of domains forming a maze stripe pattern with the average domain size (102±6) nm. The domains have their magnetizations oriented almost perpendicularly to the film surface. The domain wall energy, the domain wall thickness and the critical diameter for single-domain particle were determined. - Highlights: • 100 nm thick nanocrystalline cobalt films on Si(100) were studied quantitatively. • The grains are densely packed and possess the average size (35.6±0.8) nm. • The films have a texture with the hexagonal axis perpendicular to the film surface. • The magnetic domains form a maze stripe pattern with the average size (102±6) nm. • The domains are magnetized almost perpendicularly to the film surface.

  18. Effect of deposition rate on the microstructure of electron beam evaporated nanocrystalline palladium thin films

    Energy Technology Data Exchange (ETDEWEB)

    Amin-Ahmadi, B., E-mail: behnam.amin-ahmadi@ua.ac.be [Electron Microscopy for Materials Science (EMAT), Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium); Idrissi, H. [Electron Microscopy for Materials Science (EMAT), Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium); Galceran, M. [Université Libre de Bruxelles, Matters and Materials Department, 50 Av. FD Roosevelt CP194/03, 1050 Brussels (Belgium); Colla, M.S. [Institute of Mechanics, Materials and Civil Engineering, Université catholique de Louvain, Place Sainte Barbe 2, B-1348 Louvain-la-Neuve (Belgium); Raskin, J.P. [Information and Communications Technologies, Electronics and Applied Mathematics (ICTEAM), Microwave Laboratory, Université catholique de Louvain, B-1348 Louvain-la-Neuve (Belgium); Pardoen, T. [Institute of Mechanics, Materials and Civil Engineering, Université catholique de Louvain, Place Sainte Barbe 2, B-1348 Louvain-la-Neuve (Belgium); Godet, S. [Université Libre de Bruxelles, Matters and Materials Department, 50 Av. FD Roosevelt CP194/03, 1050 Brussels (Belgium); Schryvers, D. [Electron Microscopy for Materials Science (EMAT), Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium)

    2013-07-31

    The influence of the deposition rate on the formation of growth twins in nanocrystalline Pd films deposited by electron beam evaporation is investigated using transmission electron microscopy. Statistical measurements prove that twin boundary (TB) density and volume fraction of grains containing twins increase with increasing deposition rate. A clear increase of the dislocation density was observed for the highest deposition rate of 5 Å/s, caused by the increase of the internal stress building up during deposition. Based on crystallographic orientation indexation using transmission electron microscopy, it can be concluded that a {111} crystallographic texture increases with increasing deposition rate even though the {101} crystallographic texture remains dominant. Most of the TBs are fully coherent without any residual dislocations. However, for the highest deposition rate (5 Å/s), the coherency of the TBs decreases significantly as a result of the interaction of lattice dislocations emitted during deposition with the growth TBs. The analysis of the grain boundary character of different Pd films shows that an increasing fraction of high angle grain boundaries with misorientation angles around 55–65° leads to a higher potential for twin formation. - Highlights: • Fraction of twinned grains and twin boundary density increase with deposition rate. • Clear increase of dislocation density was observed for the highest deposition rate. • A moderate increase of the mean grain size with increase of deposition rate is found. • For the highest deposition rate, the twin boundaries lose their coherency. • Fraction of high angle grain boundary (55–65) increases with deposition rate.

  19. GALVANIC MAGNETIC PROPERTIES OF BISMUTH THIN FILMS DOPED WITH TELLURIUM MADE BY THERMAL VACUUM EVAPORATION

    Directory of Open Access Journals (Sweden)

    V. A. Komarov

    2013-01-01

    Full Text Available The influence of n-type impurity of tellurium (concentration range from 0.005 atomic % Te to 0.15 atomic % Te on galvanic magnetic properties (resistivity, magnetic resistance and Hall constant of Bi thin films with various thicknesses was studied. The properties were measured in temperature range from 77 to 300 K. It was established that the classical size effect in the films is significant and decreases with higher concentration of Te impurity. The analysis of experimental results was carried out in approximation of the law of Jones-Schoenberg dispersion for Bi films doped with tellurium. Calculation of concentration and mobility of charge carriers in the studied films was made.

  20. Structure and magnetic properties of Fe doped In{sub 2}O{sub 3} thin films prepared by electron beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Krishna, N. Sai; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana; Krishnamoorthi, C.; Begam, M. Rigana [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu, Tamilnadu -603104 (India)

    2015-06-24

    Pure and Fe (7 at.%) doped In{sub 2}O{sub 3} thin films were grown onto the glass substrates by electron beam evaporation technique. The structural and magnetic properties of the pure and Fe doped In{sub 2}O{sub 3} thin films have been studied. The undoped and Fe doped In{sub 2}O{sub 3} thin films shown ferromagnetic property at room temperature. A magnetization of 24 emu/cm{sup 3} was observed for pure In{sub 2}O{sub 3} thin films. The magnetization of 38.23 emu/cm{sup 3} was observed for the Fe (7 at.%) doped In{sub 2}O{sub 3} thin films.

  1. Copper tin sulfide (CTS) absorber thin films obtained by co-evaporation: Influence of the ratio Cu/Sn

    Energy Technology Data Exchange (ETDEWEB)

    Robles, V., E-mail: victor.robles@ciemat.es; Trigo, J.F.; Guillén, C.; Herrero, J.

    2015-09-05

    Highlights: • Copper tin sulfide (CTS) thin films were grown by co-evaporation at different Cu/Sn atomic ratios. • Smooth Cu{sub 2}SnS{sub 3} layers with large grains are obtained at Cu/Sn ⩾ 1.5 and T ⩾ 350 °C. • At 450 °C, the cubic Cu{sub 2}SnS{sub 3} phase changes to tetragonal phase. • Cu{sub 2}SnS{sub 3} presents suitable optical and electrical properties for use as photovoltaic absorbers. - Abstract: Copper tin sulfide thin films have been grown on soda-lime glass substrates from the elemental constituents by co-evaporation. The synthesis was performed at substrate temperatures of 350 °C and 450 °C and different Cu/Sn ratios, adjusting the deposition time in order to obtain thicknesses above 1000 nm. The evolution of the morphological, structural, chemical, optical and electrical properties has been analyzed as a function of the substrate temperature and the Cu/Sn ratio. For the samples with Cu/Sn ⩽ 1, Cu{sub 2}Sn{sub 3}S{sub 7} and Cu{sub 2}SnS{sub 3} have been observed by XRD. Increasing the Cu/Sn to 1.5, the Cu{sub 2}SnS{sub 3} phase was the majority, being the formation completed at Cu/Sn ratio around 2. The increment of the substrate temperature leads to a change of cubic structure to tetragonal of the Cu{sub 2}SnS{sub 3} phase. The chemical treatment with KCN was effective to eliminate CuS excess detected in the samples with Cu/Sn > 2.2. The samples with Cu{sub 2}SnS{sub 3} structure show a band gap energy increasing from 0.9 to 1.25 eV and an electrical resistivity decreasing from 7 ∗ 10{sup −2} Ω cm to 3 ∗ 10{sup −3} Ω cm when the Cu/Sn atomic ratio increases from 1.5 to 2.2.

  2. Synthesis and characterization of binary ZnO-SnO2 (ZTO) thin films by e-beam evaporation technique

    Science.gov (United States)

    Bibi, Shagufta; Shah, A.; Mahmood, Arshad; Ali, Zahid; Raza, Qaisar; Aziz, Uzma; Haneef; Waheed, Abdul; Shah, Ziaullah

    2018-04-01

    The binary ZnO-SnO2 (ZTO) thin films with varying SnO2 concentrations (5, 10, 15, and 20 wt%) were grown on glass substrate by e-beam evaporation technique. The prepared ZTO films were annealed at 400 °C in air. These films were then characterized to investigate their structural, optical, and electrical properties as a function of SnO2 concentration. XRD analysis reveals that the crystallinity of the film decreases with the addition of SnO2 and it transforms to an amorphous structure at a composition of 40% SnO2 and 60% ZnO. Morphology of the films was examined by atomic force microscopy which points out that surface roughness of the films decreases with the increasing of SnO2 in the film. Optical properties such as optical transparency, band-gap energy, and optical constants of these films were examined by spectrophotometer and spectroscopic Ellipsometer. It was observed that the average optical transmission of mixed films improves with incorporation of SnO2. In addition, the band-gap energy of the films was determined to be in the range of 3.37-3.7 eV. Furthermore, it was found that the optical constants (n and k) decrease with the addition of SnO2. Similarly, it is observed that the electrical resistivity increases nonlinearly with the increase in SnO2 in ZnO-SnO2 thin films. However, it is noteworthy that the highest figure of merit (FOM) value, i.e., 55.87 × 10-5 Ω-1, is obtained for ZnO-SnO2 (ZTO) thin film with 40 wt% of SnO2 composition. Here, we suggest that ZnO-SnO2 (ZTO) thin film with composition of 60:40 wt% can be used as an efficient TCO film due to the improved transmission, and reduced RMS value and highest FOM value.

  3. Pilot-Scale Test Results Of A Thin Film Evaporator System For Management Of Liquid High-Level Wastes At The Hanford Site Washington USA -11364

    International Nuclear Information System (INIS)

    Corbett, J.E.; Tedesch, A.R.; Wilson, R.A.; Beck, T.H.; Larkin, J.

    2011-01-01

    A modular, transportable evaporator system, using thin film evaporative technology, is planned for deployment at the Hanford radioactive waste storage tank complex. This technology, herein referred to as a wiped film evaporator (WFE), will be located at grade level above an underground storage tank to receive pumped liquids, concentrate the liquid stream from 1.1 specific gravity to approximately 1.4 and then return the concentrated solution back into the tank. Water is removed by evaporation at an internal heated drum surface exposed to high vacuum. The condensed water stream will be shipped to the site effluent treatment facility for final disposal. This operation provides significant risk mitigation to failure of the aging 242-A Evaporator facility; the only operating evaporative system at Hanford maximizing waste storage. This technology is being implemented through a development and deployment project by the tank farm operating contractor, Washington River Protection Solutions (WRPS), for the Office of River Protection/Department of Energy (ORPIDOE), through Columbia Energy and Environmental Services, Inc. (Columbia Energy). The project will finalize technology maturity and install a system at one of the double-shell tank farms. This paper summarizes results of a pilot-scale test program conducted during calendar year 2010 as part of the ongoing technology maturation development scope for the WFE.

  4. PILOT-SCALE TEST RESULTS OF A THIN FILM EVAPORATOR SYSTEM FOR MANAGEMENT OF LIQUID HIGH-LEVEL WASTES AT THE HANFORD SITE WASHINGTON USA -11364

    Energy Technology Data Exchange (ETDEWEB)

    CORBETT JE; TEDESCH AR; WILSON RA; BECK TH; LARKIN J

    2011-02-14

    A modular, transportable evaporator system, using thin film evaporative technology, is planned for deployment at the Hanford radioactive waste storage tank complex. This technology, herein referred to as a wiped film evaporator (WFE), will be located at grade level above an underground storage tank to receive pumped liquids, concentrate the liquid stream from 1.1 specific gravity to approximately 1.4 and then return the concentrated solution back into the tank. Water is removed by evaporation at an internal heated drum surface exposed to high vacuum. The condensed water stream will be shipped to the site effluent treatment facility for final disposal. This operation provides significant risk mitigation to failure of the aging 242-A Evaporator facility; the only operating evaporative system at Hanford maximizing waste storage. This technology is being implemented through a development and deployment project by the tank farm operating contractor, Washington River Protection Solutions (WRPS), for the Office of River Protection/Department of Energy (ORPIDOE), through Columbia Energy and Environmental Services, Inc. (Columbia Energy). The project will finalize technology maturity and install a system at one of the double-shell tank farms. This paper summarizes results of a pilot-scale test program conducted during calendar year 2010 as part of the ongoing technology maturation development scope for the WFE.

  5. Preparation and characterization of co-evaporated Cu{sub 2}ZnGeSe{sub 4} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Uday Bhaskar, P.; Suresh Babu, G.; Kishore Kumar, Y.B.; Sundara Raja, V., E-mail: sundararajav@rediffmail.com

    2013-05-01

    Cu{sub 2}ZnGeSe{sub 4} (CZGSe), a member of Cu{sub 2}–II–IV–VI{sub 4} family, is a promising material for solar cell absorber layer in thin film heterojunction solar cells like Cu{sub 2}ZnSnS{sub 4} and Cu{sub 2}ZnSnSe{sub 4} which have been explored in recent years as alternate to CuInGaSe{sub 2} solar cells. The effect of substrate temperature (523 K–723 K) on the growth of CZGSe films is investigated by studying their structural, morphological and optical properties. Raman spectroscopy studies have been done to identify the phases in addition to X-ray diffraction studies. CZGSe films deposited at different substrate temperatures and annealed at 723 K in selenium atmosphere are Cu-rich and Ge-poor and contained secondary phases Cu{sub (2−x)}Se and ZnSe. CZGSe films obtained by reducing the starting Cu mass by 10% were found to be single phase with stannite structure, the lattice parameters being a = 0.563 nm, c = 1.101 nm. The direct optical band gap of CZGSe films is found to be 1.63 eV which is close to ideal band gap of 1.50 eV for the highest photovoltaic conversion efficiency. The films are found to be p-type. - Highlights: • Synthesis of Cu{sub 2}ZnGeSe{sub 4} films for solar cell absorber layer • Effect of substrate temperature on the growth of co-evaporated Cu{sub 2}ZnGeSe{sub 4} films • X-ray diffraction, Raman and morphological studies of Cu{sub 2}ZnGeSe{sub 4} thin films.

  6. Influence of annealing temperature on Raman and photoluminescence spectra of electron beam evaporated TiO₂ thin films.

    Science.gov (United States)

    Vishwas, M; Narasimha Rao, K; Chakradhar, R P S

    2012-12-01

    Titanium dioxide (TiO(2)) thin films were deposited on fused quartz substrates by electron beam evaporation method at room temperature. The films were annealed at different temperatures in ambient air. The surface morphology/roughness at different annealing temperatures were analyzed by atomic force microscopy (AFM). The crystallinity of the film has improved with the increase of annealing temperature. The effect of annealing temperature on optical, photoluminescence and Raman spectra of TiO(2) films were investigated. The refractive index of TiO(2) films were studied by envelope method and reflectance spectra and it is observed that the refractive index of the films was high. The photoluminescence intensity corresponding to green emission was enhanced with increase of annealing temperature. The peaks in Raman spectra depicts that the TiO(2) film is of anatase phase after annealing at 300°C and higher. The films show high refractive index, good optical quality and photoluminescence characteristics suggest that possible usage in opto-electronic and optical coating applications. Copyright © 2012 Elsevier B.V. All rights reserved.

  7. The secondary electron yield of TiZr and TiZrV non evaporable getter thin film coatings

    CERN Document Server

    Scheuerlein, C; Hilleret, Noël; Taborelli, M

    2001-01-01

    The secondary electron yield (SEY) of two different non evaporable getter (NEG) samples has been measured 'as received' and after thermal treatment. The investigated NEGs are TiZr and TiZrV thin film coatings of 1 mm thickness, which are sputter deposited onto copper substrates. The maximum SEY dmax of the air exposed TiZr and TiZrV coating decreases from above 2.0 to below 1.1 during a 2 hour heat treatment at 250 °C and 200 °C, respectively. Saturating an activated TiZrV surface under vacuum with the gases typically present in ultra high vacuum systems increases dmax by about 0.1. Changes in elemental surface composition during the applied heat treatments were monitored by Auger electron spectroscopy (AES). After activation carbon, oxygen and chlorine were detected on the NEG surfaces. The potential of AES for detecting the surface modifications which cause the reduction of SE emission during the applied heat treatments is critically discussed.

  8. Concentration of remote-handled, transuranic, sodium nitrate-based sludge using agitated thin-film evaporators

    International Nuclear Information System (INIS)

    Walker, J.F. Jr.; Youngblood, E.L.; Berry, J.B.; Pen, Ben-Li

    1991-01-01

    The Waste Handling and Packaging Plant (WHPP) is being designed at Oak Ridge National Laboratory (ORNL) to prepared transuranic waste for final disposal. Once operational, this facility will process, package, and certify remote-handled transuranic waste for ultimate shipment and disposal at the Waste Isolation Pilot Plant (WIPP) in Carlsbad, New Mexico. One of the wastes that will be handled at WHIPP is the transuranic sludge currently stored at ORNL in eight 50,000-gal underground tanks. The use of an Agitated Thin-Film Evaporator (ATFE) for concentration of this waste is being investigated. Tests have shown that the ATFE can be used to produce a thick slurry, a powder, or a fused salt. A computer model developed at the Savannah River Plant (SRP) to simulate the operation of ATFE's on their waste is being modified for use on the ORNL transuranic sludge. This paper summarizes the results of the test with the ATFEs to date, discusses the changes in the SRP model necessary to use this model with the ORNL waste, and compares the results of the model with the actual data taken from the operation of ATFEs at vendors' test facilities. 8 refs., 1 fig., 3 tabs

  9. Thin films of polymer blends deposited by matrix-assisted pulsed laser evaporation: Effects of blending ratios

    International Nuclear Information System (INIS)

    Paun, Irina Alexandra; Ion, Valentin; Moldovan, Antoniu; Dinescu, Maria

    2011-01-01

    In this work, we show successful use of matrix-assisted pulsed laser evaporation (MAPLE) for obtaining thin films of PEG:PLGA blends, in the view of their use for controlled drug delivery. In particular, we investigate the influence of the blending ratios on the characteristics of the films. We show that the roughness of the polymeric films is affected by the ratio of each polymer within the blend. In addition, we perform Fourier transformed infrared spectroscopy (FTIR) measurements and we find that the intensities ratios of the infrared absorption bands of the two polymers are consistent with the blending ratios. Finally, we assess the optical constants of the polymeric films by spectroscopic ellipsometry (SE). We point out that the blending ratios exert an influence on the optical characteristics of the films and we validate the SE results by atomic force microscopy and UV-vis spectrophotometry. In all, we stress that the ratios in which the two polymers are blended have significant impact on the morphology, chemical structure and optical characteristics of the polymeric films deposited by MAPLE.

  10. X-Ray diffraction analysis of thermally evaporated copper tin selenide thin films at different annealing temperature

    International Nuclear Information System (INIS)

    Mohd Amirul Syafiq Mohd Yunos; Zainal Abidin Talib; Wan Mahmood Mat Yunus; Josephine Liew Ying Chyi; Wilfred Sylvester Paulus

    2010-01-01

    Semiconductor thin films Copper Tin Selenide, Cu 2 SnSe 3 , a potential compound for semiconductor radiation detector or solar cell applications were prepared by thermal evaporation method onto well-cleaned glass substrates. The as-deposited films were annealed in flowing purified nitrogen, N 2 , for 2 hours in the temperature range from 100 to 500 degree Celsius. The structure of as-deposited and annealed films has been studied by X-ray diffraction technique. The semi-quantitative analysis indicated from the Reitveld refinement show that the samples composed of Cu 2 SnSe 3 and SnSe. These studies revealed that the films were structured in mixed phase between cubic space group F-43 m (no. 216) and orthorhombic space group P n m a (no. 62). The crystallite size and lattice strain were determined from Scherrer calculation method. The results show that increasing in annealing temperature resulted in direct increase in crystallite size and decrease in lattice strain. (author)

  11. Study of the photodissociation of a CdSe nanocrystal beam by means of photoluminescence and Raman scattering

    CERN Document Server

    Orii, T; Onari, S; Kaito, S I; Arai, T

    1997-01-01

    We developed an apparatus that enables us to perform optical measurements of nanocrystals suspended in vacuum. CdSe nanocrystals were produced by a gas evaporation method, and nanocrystal beams were then formed using an inert-gas flow with differential pumping. We measured photoluminescence spectra of the nanocrystal beams with excitations of various photon energies and powers. For a low excitation power, edge emission of the CdSe nanocrystal beam was observed. With increase of the laser power, Raman lines of Se dimers emitted due to the photodissociation of CdSe nanocrystals were observed. It was found that the thresholds of the excitation laser fluence for the photodissociation of CdSe nanocrystals were much smaller than the thresholds of laser fluence for the laser-induced emission of Se atoms from bulk CdSe. The electronic process is dominant in the photodissociation of CdSe nanocrystals whose surfaces are completely free. We suggest that the effective supply of carriers confined in nanocrystals to the su...

  12. Organic Thin Films Deposited by Emulsion-Based, Resonant Infrared, Matrix-Assisted Pulsed Laser Evaporation: Fundamentals and Applications

    Science.gov (United States)

    Ge, Wangyao

    Thin film deposition techniques are indispensable to the development of modern technologies as thin film based optical coatings, optoelectronic devices, sensors, and biological implants are the building blocks of many complicated technologies, and their performance heavily depends on the applied deposition technique. Particularly, the emergence of novel solution-processed materials, such as soft organic molecules, inorganic compounds and colloidal nanoparticles, facilitates the development of flexible and printed electronics that are inexpensive, light weight, green and smart, and these thin film devices represent future trends for new technologies. One appealing feature of solution-processed materials is that they can be deposited into thin films using solution-processed deposition techniques that are straightforward, inexpensive, high throughput and advantageous to industrialize thin film based devices. However, solution-processed techniques rely on wet deposition, which has limitations in certain applications, such as multi-layered film deposition of similar materials and blended film deposition of dissimilar materials. These limitations cannot be addressed by traditional, vacuum-based deposition techniques because these dry approaches are often too energetic and can degrade soft materials, such as polymers, such that the performance of resulting thin film based devices is compromised. The work presented in this dissertation explores a novel thin film deposition technique, namely emulsion-based, resonant infrared, matrix-assisted pulsed laser evaporation (RIR-MAPLE), which combines characteristics of wet and dry deposition techniques for solution-processed materials. Previous studies have demonstrated the feasibility of emulsion-based RIR-MAPLE to deposit uniform and continuous organic, nanoparticle and blended films, as well as hetero-structures that otherwise are difficult to achieve. However, fundamental understanding of the growth mechanisms that govern

  13. Evaporation temperature-tuned physical vapor deposition growth engineering of one-dimensional non-Fermi liquid tetrathiofulvalene tetracyanoquinodimethane thin films

    DEFF Research Database (Denmark)

    Sarkar, I.; Laux, M.; Demokritova, J.

    2010-01-01

    We describe the growth of high quality tetrathiofulvalene tetracyanoquinodimethane (TTF-TCNQ) organic charge-transfer thin films which show a clear non-Fermi liquid behavior. Temperature dependent angle resolved photoemission spectroscopy and electronic structure calculations show that the growth...... of TTF-TCNQ films is accompanied by the unfavorable presence of neutral TTF and TCNQ molecules. The quality of the films can be controlled by tuning the evaporation temperature of the precursor in physical vapor deposition method....

  14. Thin film deposition and characterization of pure and iron-doped electron-beam evaporated tungsten oxide for gas sensors

    Energy Technology Data Exchange (ETDEWEB)

    Tesfamichael, Tuquabo, E-mail: t.tesfamichael@qut.edu.a [Faculty of Built Environment and Engineering, School of Engineering Systems, Queensland University of Technology, 2 George Street, Brisbane, QLD 4000 (Australia); Arita, Masashi [Graduate School of Information Science and Technology, Hokkaido University, Kita-14, Nishi-9, Kita-ku, Sapporo, 060-0814 (Japan); Bostrom, Thor [Faculty of Science and Technology, School of Physical and Chemical Sciences, Queensland University of Technology, 2 George Street, Brisbane, QLD 4000 (Australia); Bell, John [Centre for Built Environment and Engineering Research, Queensland University of Technology, 2 George Street, Brisbane, QLD 4000 (Australia)

    2010-06-30

    Pure tungsten oxide (WO{sub 3}) and iron-doped (10 at.%) tungsten oxide (WO{sub 3}:Fe) nanostructured thin films were prepared using a dual crucible Electron Beam Evaporation (EBE) technique. The films were deposited at room temperature under high vacuum onto glass as well as alumina substrates and post-heat treated at 300 {sup o}C for 1 h. Using Raman spectroscopy the as-deposited WO{sub 3} and WO{sub 3}:Fe films were found to be amorphous, however their crystallinity increased after annealing. The estimated surface roughness of the films was similar (of the order of 3 nm) to that determined using Atomic Force Microscopy (AFM). As observed by AFM, the WO{sub 3}:Fe film appeared to have a more compact surface as compared to the more porous WO{sub 3} film. X-ray photoelectron spectroscopy analysis showed that the elemental stoichiometry of the tungsten oxide films was consistent with WO{sub 3}. A slight difference in optical band gap energies was found between the as-deposited WO{sub 3} (3.22 eV) and WO{sub 3}:Fe (3.12 eV) films. The differences in the band gap energies of the annealed films were significantly higher, having values of 3.12 eV and 2.61 eV for the WO{sub 3} and WO{sub 3}:Fe films respectively. The heat treated films were investigated for gas sensing applications using noise spectroscopy. It was found that doping of Fe to WO{sub 3} produced gas selectivity but a reduced gas sensitivity as compared to the WO{sub 3} sensor.

  15. Mobility lifetime product in doped and undoped nanocrystalline CdSe

    International Nuclear Information System (INIS)

    Tripathi, S.K.; Al-Kabbi, Alaa S.; Sharma, Kriti; Saini, G.S.S.

    2013-01-01

    This paper reports the effect of doping on the charge transport in nanocrystalline CdSe thin film. The X-ray study confirms that the doping is achieved and the physical properties are improved. The energy resolution of a semiconductor radiation detector depends on the charge transport properties of the semiconductor and the mobility-lifetime (μτ) product is a key figure of merit for the charge transport. μτ product in nanocrystalline CdSe, CdSe:In and CdSe:Zn thin films has been estimated from temperature dependence of the photoconductivity, which increases with increase in temperature and doping. Also, μτ product of electrons in pure and doped nanocrystalline CdSe thin films has been determined by spectral photoconductivity at different applied voltages. Both the μτ and photoconductivity increase linearly with the bias voltage but the wavelength dependence remains qualitatively similar in all samples. The μτ products increase at photon energies > energy gap, which indicates that the recombination process depends on the excitation energy. The doped CdSe thin films have higher drift length in comparison with undoped films which suggest that these thin films can be used in charge collecting devices. - Highlights: • The structure of thin films has been studied using X-ray diffraction. • Spectral dependence of μτ product in pure and doped nc-CdSe thin films is studied. • The mobility-lifetime product shows dependence on temperature and doping type. • The drift length increases linearly with increasing applied field and doping. • The transport properties of nc-CdSe thin films are enhanced with doping

  16. Structural and electrical properties of co-evaporated Cu(In,Ga)Se{sub 2} thin films with varied Cu contents

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Min Young; Kim, Girim; Kim, Jongwan; Park, Jae Hwan; Lim, Donggun, E-mail: dglim@ut.ac.kr

    2013-11-01

    Cu(In,Ga)Se{sub 2} (CIGS) thin films were fabricated with varying Cu contents. Cu/(Ga + In) ratios were varied between 0.4 and 1.02. Solar cells were then fabricated by co-evaporation using the CIGS layers as absorbers. The influences of Cu content on the cells' structural, optical and electrical properties were studied. The CIGS thin films were characterized by X-ray diffractometer, scanning electron microscopy, energy-dispersive spectroscopy, four-point probe measurement and Hall measurement. Grain size in the films increased with increasing Cu content. At a Cu/(Ga + In) ratio of 0.86, the (220/204) peak was stronger than the (112) peak and carrier concentration was 1.49 × 10{sup 16} cm{sup −3}. Optimizing the Cu content resulted in a CIGS solar cell with an efficiency of 16.5%. - Highlights: • Improvement of technique to form Cu(In,Ga)Se{sub 2} (CIGS) film by co-evaporation method • Cu/(In + Ga) ratio to improve the efficiency for CIGS thin film solar cell • Cu content effects have been analyzed. • Optimum condition of CIGS layer as an absorber of thin film solar cells.

  17. In{sub 6}Se{sub 7} thin films by heating thermally evaporated indium and chemical bath deposited selenium multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Ornelas, R.E.; Avellaneda, D. [Universidad Autonoma de Nuevo Leon, Facultad de Ingenieria Mecanica y Electrica, San Nicolas de los Garza, Nuevo Leon-66450 (Mexico); Shaji, S. [Universidad Autonoma de Nuevo Leon, Facultad de Ingenieria Mecanica y Electrica, San Nicolas de los Garza, Nuevo Leon-66450 (Mexico); Universidad Autonoma de Nuevo Leon-CIIDIT, Apodaca, N.L (Mexico); Castillo, G.A.; Roy, T.K. Das [Universidad Autonoma de Nuevo Leon, Facultad de Ingenieria Mecanica y Electrica, San Nicolas de los Garza, Nuevo Leon-66450 (Mexico); Krishnan, B., E-mail: kbindu_k@yahoo.com [Universidad Autonoma de Nuevo Leon, Facultad de Ingenieria Mecanica y Electrica, San Nicolas de los Garza, Nuevo Leon-66450 (Mexico); Universidad Autonoma de Nuevo Leon-CIIDIT, Apodaca, N.L (Mexico)

    2012-05-15

    Indium selenide (In{sub 6}Se{sub 7}) thin films were prepared via selenization of thermally evaporated indium thin films by dipping in sodium selenosulphate solution followed by annealing in nitrogen atmosphere. First, indium was thermally evaporated on glass substrate. Then, the indium coated glass substrates were dipped in a solution containing 80 ml 0.125 M sodium selenosulphate and 1.5 ml dilute acetic acid (25%) for 5 min. Glass/In-Se layers were annealed at 200-400 Degree-Sign C in nitrogen atmosphere (0.1 Torr) for 30 min. X-ray diffraction studies showed the formation of monoclinic In{sub 6}Se{sub 7}. Morphology of the thin films formed at different conditions was analyzed using Scanning electron microscopy. The elemental analysis was done using Energy dispersive X-ray detection. Electrical conductivity under dark and illumination conditions was evaluated. Optical band gap was computed using transmittance and reflectance spectra. The band gap value was in the range 1.8-2.6 eV corresponding to a direct allowed transition. We studied the effect of indium layer thickness and selenium deposition time on the structure, electrical and optical properties of In{sub 6}Se{sub 7} thin films.

  18. Removing the by-products acetic acid and NH4+ from the l-tryptophan broth by vacuum thin film evaporation during l-tryptophan production

    Directory of Open Access Journals (Sweden)

    Qingyang Xu

    2018-05-01

    Full Text Available Background: During l-tryptophan production by Escherichia coli, the by-products, acetic acid and NH4+, accumulate in the fermentation broth, resulting in inhibited cell growth and activity and decreased l-tryptophan production. To improve the l-tryptophan yield and glucose conversion rate, acetic acid and NH4+ were removed under low-temperature vacuum conditions by vacuum scraper concentrator evaporation; the fermentation broth after evaporation was pressed into another fermenter to continue fermentation. To increase the volatilisation rate of acetic acid and NH4+ and reduce damage to bacteria during evaporation, different vacuum evaporation conditions were studied. Results: The optimum operating conditions were as follows: vacuum degree, 720 mm Hg; concentration ratio, 10%; temperature, 60°C; and feeding rate, 300 mL/min. The biomass yield of the control fermentation (CF and fermentation by vacuum evaporation (VEF broths was 55.1 g/L and 58.3 g/L at 38 h, respectively, (an increase of 5.8%; the living biomass yield increased from 8.9 (CF to 10.2 pF (VEF; an increase of 14.6%. l-tryptophan production increased from 50.2 g/L (CF to 60.2 g/L (VEF (an increase of 19.9%, and glucose conversion increased from 18.2% (CF to 19.5% (VEF; an increase of 7.1%. The acetic acid concentrations were 2.74 g/L and 6.70 g/L, and the NH4+ concentrations were 85.3 mmol/L and 130.9 mmol/L in VEF and CF broths, respectively. Conclusions: The acetic acid and NH4+ in the fermentation broth were quickly removed using the vacuum scraper concentrator, which reduced bacterial inhibition, enhanced bacterial activity, and improved the production of l-tryptophan and glucose conversion rate.How to cite: Xu Q, Bai F, Chen N, et al. Removing the by-products acetic acid and NH4+ from the l-tryptophan broth by vacuum thin film evaporation during l-tryptophan production. Electron J Biotechnol 2018; 33. https://doi.org/10.1016/j.ejbt.2018.04.003. Keywords: Acetic acid

  19. Enhanced Charge Extraction of Li-Doped TiO2 for Efficient Thermal-Evaporated Sb2S3 Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Chunfeng Lan

    2018-02-01

    Full Text Available We provided a new method to improve the efficiency of Sb2S3 thin film solar cells. The TiO2 electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb2S3 solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO2 films. Compared with the undoped TiO2, Li-doped mesoporous TiO2 dramatically improved the photo-voltaic performance of the thermal-evaporated Sb2S3 thin film solar cells, with the average power conversion efficiency (PCE increasing from 1.79% to 4.03%, as well as the improved open-voltage (Voc, short-circuit current (Jsc and fill factors. The best device based on Li-doped TiO2 achieved a power conversion efficiency up to 4.42% as well as a Voc of 0.645 V, which are the highest values among the reported thermal-evaporated Sb2S3 solar cells. This study showed that Li-doping on TiO2 can effectively enhance the charge extraction properties of electron transport layers, offering a new strategy to improve the efficiency of Sb2S3-based solar cells.

  20. Enhanced Charge Extraction of Li-Doped TiO2 for Efficient Thermal-Evaporated Sb2S3 Thin Film Solar Cells

    Science.gov (United States)

    Lan, Chunfeng; Luo, Jingting; Lan, Huabin; Fan, Bo; Peng, Huanxin; Zhao, Jun; Sun, Huibin; Zheng, Zhuanghao; Liang, Guangxing; Fan, Ping

    2018-01-01

    We provided a new method to improve the efficiency of Sb2S3 thin film solar cells. The TiO2 electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb2S3 solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO2 films. Compared with the undoped TiO2, Li-doped mesoporous TiO2 dramatically improved the photo-voltaic performance of the thermal-evaporated Sb2S3 thin film solar cells, with the average power conversion efficiency (PCE) increasing from 1.79% to 4.03%, as well as the improved open-voltage (Voc), short-circuit current (Jsc) and fill factors. The best device based on Li-doped TiO2 achieved a power conversion efficiency up to 4.42% as well as a Voc of 0.645 V, which are the highest values among the reported thermal-evaporated Sb2S3 solar cells. This study showed that Li-doping on TiO2 can effectively enhance the charge extraction properties of electron transport layers, offering a new strategy to improve the efficiency of Sb2S3-based solar cells. PMID:29495612

  1. Enhanced Charge Extraction of Li-Doped TiO₂ for Efficient Thermal-Evaporated Sb₂S₃ Thin Film Solar Cells.

    Science.gov (United States)

    Lan, Chunfeng; Luo, Jingting; Lan, Huabin; Fan, Bo; Peng, Huanxin; Zhao, Jun; Sun, Huibin; Zheng, Zhuanghao; Liang, Guangxing; Fan, Ping

    2018-02-28

    We provided a new method to improve the efficiency of Sb₂S₃ thin film solar cells. The TiO₂ electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb₂S₃ solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO₂ films. Compared with the undoped TiO₂, Li-doped mesoporous TiO₂ dramatically improved the photo-voltaic performance of the thermal-evaporated Sb₂S₃ thin film solar cells, with the average power conversion efficiency ( PCE ) increasing from 1.79% to 4.03%, as well as the improved open-voltage ( V oc ), short-circuit current ( J sc ) and fill factors. The best device based on Li-doped TiO₂ achieved a power conversion efficiency up to 4.42% as well as a V oc of 0.645 V, which are the highest values among the reported thermal-evaporated Sb₂S₃ solar cells. This study showed that Li-doping on TiO₂ can effectively enhance the charge extraction properties of electron transport layers, offering a new strategy to improve the efficiency of Sb₂S₃-based solar cells.

  2. Preparation of p-type GaN-doped SnO2 thin films by e-beam evaporation and their applications in p-n junction

    Science.gov (United States)

    Lv, Shuliang; Zhou, Yawei; Xu, Wenwu; Mao, Wenfeng; Wang, Lingtao; Liu, Yong; He, Chunqing

    2018-01-01

    Various transparent GaN-doped SnO2 thin films were deposited on glass substrates by e-beam evaporation using GaN:SnO2 targets of different GaN weight ratios. It is interesting to find that carrier polarity of the thin films was converted from n-type to p-type with increasing GaN ratio higher than 15 wt.%. The n-p transition in GaN-doped SnO2 thin films was explained for the formation of GaSn and NO with increasing GaN doping level in the films, which was identified by Hall measurement and XPS analysis. A transparent thin film p-n junction was successfully fabricated by depositing p-type GaN:SnO2 thin film on SnO2 thin film, and a low leakage current (6.2 × 10-5 A at -4 V) and a low turn-on voltage of 1.69 V were obtained for the p-n junction.

  3. Full-Scale Testing Technology Maturation Of A Thin Film Evaporator For High-Level Liquid Waste Management At Hanford - 12125

    International Nuclear Information System (INIS)

    Tedeschi, A.R.; Corbett, J.E.; Wilson, R.A.; Larkin, J.

    2012-01-01

    Simulant testing of a full-scale thin-film evaporator system was conducted in 2011 for technology development at the Hanford tank farms. Test results met objectives of water removal rate, effluent quality, and operational evaluation. Dilute tank waste simulant, representing a typical double-shell tank supernatant liquid layer, was concentrated from a 1.1 specific gravity to approximately 1.5 using a 4.6 m 2 (50 ft 2 ) heated transfer area Rototherm(reg s ign) evaporator from Artisan Industries. The condensed evaporator vapor stream was collected and sampled validating efficient separation of the water. An overall decontamination factor of 1.2E+06 was achieved demonstrating excellent retention of key radioactive species within the concentrated liquid stream. The evaporator system was supported by a modular steam supply, chiller, and control computer systems which would be typically implemented at the tank farms. Operation of these support systems demonstrated successful integration while identifying areas for efficiency improvement. Overall testing effort increased the maturation of this technology to support final deployment design and continued project implementation.

  4. Molten-droplet synthesis of composite CdSe hollow nanoparticles

    KAUST Repository

    Gullapalli, Sravani; Grider, Jason M.; Bagaria, Hitesh G.; Lee, Kyusung; Cho, Minjung; Colvin, Vicki L.; Jabbour, Ghassan E.; Wong, Michael

    2012-01-01

    Many colloidal synthesis routes are not scalable to high production rates, especially for nanoparticles of complex shape or composition, due to precursor expense and hazards, low yields, and the large number of processing steps. The present work describes a strategy to synthesize hollow nanoparticles (HNPs) out of metal chalcogenides, based on the slow heating of a low-melting-point metal salt, an elemental chalcogen, and an alkylammonium surfactant in octadecene solvent. The synthesis and characterization of CdSe HNPs with an outer diameter of 15.6 ± 3.5 nm and a shell thickness of 5.4 ± 0.9 nm are specifically detailed here. The HNP synthesis is proposed to proceed with the formation of alkylammonium-stabilized nano-sized droplets of molten cadmium salt, which then come into contact with dissolved selenium species to form a CdSe shell at the droplet surface. In a reaction-diffusion mechanism similar to the nanoscale Kirkendall effect it is speculated that the cadmium migrates outwardly through this shell to react with more selenium, causing the CdSe shell to thicken. The proposed CdSe HNP structure comprises a polycrystalline CdSe shell coated with a thin layer of amorphous selenium. Photovoltaic device characterization indicates that HNPs have improved electron transport characteristics compared to standard CdSe quantum dots, possibly due to this selenium layer. The HNPs are colloidally stable in organic solvents even though carboxylate, phosphine, and amine ligands are absent; stability is attributed to octadecene-selenide species bound to the particle surface. This scalable synthesis method presents opportunities to generate hollow nanoparticles with increased structural and compositional variety. © 2012 IOP Publishing Ltd.

  5. Molten-droplet synthesis of composite CdSe hollow nanoparticles

    KAUST Repository

    Gullapalli, Sravani

    2012-11-16

    Many colloidal synthesis routes are not scalable to high production rates, especially for nanoparticles of complex shape or composition, due to precursor expense and hazards, low yields, and the large number of processing steps. The present work describes a strategy to synthesize hollow nanoparticles (HNPs) out of metal chalcogenides, based on the slow heating of a low-melting-point metal salt, an elemental chalcogen, and an alkylammonium surfactant in octadecene solvent. The synthesis and characterization of CdSe HNPs with an outer diameter of 15.6 ± 3.5 nm and a shell thickness of 5.4 ± 0.9 nm are specifically detailed here. The HNP synthesis is proposed to proceed with the formation of alkylammonium-stabilized nano-sized droplets of molten cadmium salt, which then come into contact with dissolved selenium species to form a CdSe shell at the droplet surface. In a reaction-diffusion mechanism similar to the nanoscale Kirkendall effect it is speculated that the cadmium migrates outwardly through this shell to react with more selenium, causing the CdSe shell to thicken. The proposed CdSe HNP structure comprises a polycrystalline CdSe shell coated with a thin layer of amorphous selenium. Photovoltaic device characterization indicates that HNPs have improved electron transport characteristics compared to standard CdSe quantum dots, possibly due to this selenium layer. The HNPs are colloidally stable in organic solvents even though carboxylate, phosphine, and amine ligands are absent; stability is attributed to octadecene-selenide species bound to the particle surface. This scalable synthesis method presents opportunities to generate hollow nanoparticles with increased structural and compositional variety. © 2012 IOP Publishing Ltd.

  6. Nonlinear optical studies on 4-(ferrocenylmethylimino)-2-hydroxy-benzoic acid thin films deposited by matrix-assisted pulsed laser evaporation (MAPLE)

    Energy Technology Data Exchange (ETDEWEB)

    Matei, Andreea [INFLPR - National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele RO-077125, Bucharest (Romania); Marinescu, Maria, E-mail: maria.marinescu@chimie.unibuc.ro [UB - University of Bucharest, Faculty of Chemistry, 90-92 Şoseaua Panduri, Sector 5, RO-010184, Bucharest (Romania); Constantinescu, Catalin, E-mail: catalin.constantinescu@inflpr.ro [INFLPR - National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele RO-077125, Bucharest (Romania); Ion, Valentin; Mitu, Bogdana [INFLPR - National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele RO-077125, Bucharest (Romania); Ionita, Iulian [INFLPR - National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele RO-077125, Bucharest (Romania); UB - University of Bucharest, Faculty of Physics, 405 Atomistilor Str., Magurele RO-077125, Bucharest (Romania); Dinescu, Maria [INFLPR - National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele RO-077125, Bucharest (Romania); Emandi, Ana [INFLPR - National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele RO-077125, Bucharest (Romania); UB - University of Bucharest, Faculty of Chemistry, 90-92 Şoseaua Panduri, Sector 5, RO-010184, Bucharest (Romania)

    2016-06-30

    Graphical abstract: - Highlights: • A newly synthesized ferrocene-derivative exhibits SHG potential. • Matrix-assisted pulsed laser evaporation is employed for thin film fabrication. • The optical properties of the films are investigated, presented and discussed. • At maximum laser output power, the SHG signal is strongly influenced by thin film thickness. - Abstract: We present results on a new, laboratory synthesized ferrocene-derivative, i.e. 4-(ferrocenylmethylimino)-2-hydroxy-benzoic acid. Thin films with controlled thickness are deposited by matrix-assisted pulsed laser evaporation (MAPLE), on quartz and silicon substrates, with the aim of evaluating the nonlinear optical properties for potential optoelectronic applications. Dimethyl sulfoxide was used as matrix, with 1% wt. concentration of the guest compound. The frozen target is irradiated by using a Nd:YAG laser (4ω/266 nm, 7 ns pulse duration, 10 Hz repetition rate), at low fluences ranging from 0.1 to 1 J/cm{sup 2}. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) are used to probe the surface morphology of the films. Fourier transform infrared (FTIR) and Raman spectroscopy reveal similar structure of the thin film material when compared to the starting material. The optical properties of the thin films are investigated by spectroscopic-ellipsometry (SE), and the refractive index dependence with respect to temperature is studied. The second harmonic generation (SHG) potential is assessed by using a femtosecond Ti:sapphire laser (800 nm, 60–100 fs pulse duration, 80 MHz repetition rate), at 200 mW maximum output power, revealing that the SHG signal intensity is strongly influenced by the films’ thickness.

  7. Structural, optical and electrical properties of CuIn{sub 5}S{sub 8} thin films grown by thermal evaporation method

    Energy Technology Data Exchange (ETDEWEB)

    Gannouni, M., E-mail: gm_mounir@yahoo.fr [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia); Kanzari, M. [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia)

    2011-05-19

    Highlights: > In this work, thin films of CuIn{sub 5}S{sub 8} were successfully deposited onto glass substrates by thermal evaporation and annealed in air. > Post-depositional annealing effects on structural, optical and electrical properties of thermal evaporated CuIn{sub 5}S{sub 8} thin films were studied. > The results reported in this work make this material attractive as an absorber material in solar cells applications. - Abstract: Stoichiometric compound of copper indium sulfur (CuIn{sub 5}S{sub 8}) was synthesized by direct reaction of high purity elemental copper, indium and sulfur in an evacuated quartz tube. The phase structure of the synthesized material revealed the cubic spinel structure. The lattice parameter (a) of single crystals was calculated to be 10.667 A. Thin films of CuIn{sub 5}S{sub 8} were deposited onto glass substrates under the pressure of 10{sup -6} Torr using thermal evaporation technique. CuIn{sub 5}S{sub 8} thin films were then thermally annealed in air from 100 to 300 deg. C for 2 h. The effects of thermal annealing on their physico-chemical properties were investigated using X-ray diffraction (XRD), Energy-dispersive X-ray spectroscopy (EDX), scanning electron microscope (SEM), optical transmission and hot probe method. XRD studies of CuIn{sub 5}S{sub 8} thin films showed that as-deposited films were amorphous in nature and transformed into polycrystalline spinel structure with strong preferred orientation along the (3 1 1) plane after the annealing at 200 deg. C. The composition is greatly affected by thermal treatment. From the optical transmission and reflection, an important absorption coefficient exceeds 10{sup 4} cm{sup -1} was found. As increasing the annealing temperature, the optical energy band gap decreases from 1.83 eV for the as-deposited films to 1.43 eV for the annealed films at 300 deg. C. It was found that CuIn{sub 5}S{sub 8} thin film is an n-type semiconductor at 300 deg. C.

  8. Reflection of circularly polarized light and the effect of particle distribution on circular dichroism in evaporation induced self-assembled cellulose nanocrystal thin films

    Directory of Open Access Journals (Sweden)

    D. Hewson

    2017-06-01

    Full Text Available Evaporation induced self-assembled (EISA thin films of cellulose nanocrystals (CNCs have shown great potential for displaying structural colour across the visible spectrum. They are believed primarily to reflect left handed circularly polarised (LCP light due to their natural tendency to form structures comprising left handed chirality. Accordingly the fabrication of homogenously coloured CNC thin films is challenging. Deposition of solid material towards the edge of a dried droplet, via the coffee-stain effect, is one such difficulty in achieving homogenous colour across CNC films. These effects are most easily observed in films prepared from droplets where observable reflection of visible light is localised around the edge of the dry film. We report here, the observation of both left and right hand circularly polarised (LCP/RCP light in reflection from distinct separate regions of CNC EISA thin films and we elucidate how these reflections are dependent on the distribution of CNC material within the EISA thin film. Optical models of reflection are presented which are based on structures revealed using high resolution transmission electron microscopy (TEM images of film cross sections. We have also employed spectroscopic characterisation techniques to evaluate the distribution of solid CNC material within a selection of CNC EISA thin films and we have correlated this distribution with polarised light spectra collected from each film. We conclude that film regions from which RCP light was reflected were associated with lower CNC concentrations and thicker film regions.

  9. Effect of Ge Addition on the Optical Band Gap and Refractive Index of Thermally Evaporated As2Se3 Thin Films

    Directory of Open Access Journals (Sweden)

    Pankaj Sharma

    2008-01-01

    Full Text Available The present paper reports the effect of Ge addition on the optical band gap and refractive index of As2Se3 thin films. Thin films of As2Se3 and (As2Se390Ge10 were prepared by thermal evaporation technique at base pressure 10−4 Pa. Optical band gap and refractive index were calculated by analyzing the transmission spectrum in the spectral range 400–1500 nm. The optical band gap decreases while the refractive index increases with the addition of Ge to As2Se3. The decrease of optical band gap has been explained on the basis of density of states; and the increase in refractive index has been explained on the basis increase in disorder in the system.

  10. Formation of thin film like assembly of exfoliated C3N4 nanoflakes by solvent non-evaporative method using centrifuge

    Science.gov (United States)

    Tejasvi, Ravi; Basu, Suddhasatwa

    2017-12-01

    A simple method for depositing a thin film of nanomaterial on a substrate using centrifugation technique has been developed, whereby solvent evaporation is prevented and solvent reuse is possible. The centrifuge technique of deposition yields uniform, smooth thin film irrespective of substrate surface texture. The deposited TiO2/eC3N4 film studied, through field emission scanning electron microscope, atomic force microscope, and optical surface profilometer, shows variation in surface roughness on the basis of centrifugation speeds. Initially film coverage improves and surface roughness decreases with the increase in rpm of the centrifuge and the surface roughness slightly increases with further increase in rpm. The photoelectrochemical studies of TiO2/eC3N4 films suggest that the centrifuge technique forms better heterojunctions compared to that by spin coating technique leading to enhanced photoelectrochemical water splitting.

  11. Optical properties of YbF3-CaF2 composite thin films deposited by electron-beam evaporation

    Science.gov (United States)

    Wang, Songlin; Mi, Gaoyuan; Zhang, Jianfu; Yang, Chongmin

    2018-03-01

    We studied electron-beam evaporated YbF3-CaF2 composite films on ZnS substrate at different deposition parameters. The optical properties of films have been fitted, the surface roughness have been measured by AFM. The results of experiments indicated that increased the refractive indices, extinction coefficients, and surface roughness at higher deposition rate. The refractive index of composite film deposited by electron-beam evaporation with assisted-ion source was obviously higher than it without assisted-ion source.

  12. Effect of thermal annealing on the structural and optical properties of Cu2FeSnS4 thin films grown by vacuum evaporation method

    Science.gov (United States)

    Oueslati, H.; Rabeh, M. Ben; Kanzari, M.

    2018-02-01

    In this work, the effect of different types of thermal annealing on the properties of Cu2FeSnS4 (CFTS) thin films deposited by thermal evaporation at room temperature on glass substrate were investigated. CFTS powder was synthesized by direct melting of the constituent elements taken in stoichiometry compositions. The X-ray diffraction experimental data indicating that the Cu2FeSnS4 powder illustrating a stannite structure in space group I\\bar {4}2m. From the XRD analysis we have found that the polycrystalline CFTS thin film was only obtained by thermal annealed in sulfur atmosphere under a high vacuum of 400 °C temperature during 2 h. Optical study reveals that the thin films have relatively high absorption coefficients (≈ 105cm-1) and the values of optical band gap energy ranged between 1.38 and 1.48 eV. Other optical parameters were evaluated according to the models of Wemple Di-Domenico and Spitzer-Fan. Finally, hot probe measurements of CFTS thin films reveal p-type conductivity.

  13. Structural, morphological, gas sensing and photocatalytic characterization of MoO3 and WO3 thin films prepared by the thermal vacuum evaporation technique

    Science.gov (United States)

    Arfaoui, A.; Touihri, S.; Mhamdi, A.; Labidi, A.; Manoubi, T.

    2015-12-01

    Thin films of molybdenum trioxide and tungsten trioxide were deposited on glass substrates using a simplified thermal evaporation under vacuum method monitored by heat treatment in flowing oxygen at 500 °C for 1 h. The structural and morphological properties of the films were investigated using X-ray diffraction, Raman spectroscopy, atomic force microscopy and scanning electron microscopy. The X-ray diffraction analysis shows that the films of MoO3 and WO3 were well crystallized in orthorhombic and monoclinic phase respectively with the crystallites preferentially oriented toward (2 0 0) direction parallel a-axis for both samples. In literature, we have shown in previous papers that structural and surface morphology of metal thin films play an important role in the gas detection mechanism. In this article, we have studied the response evolution of MoO3 and WO3 thin films sensors ethanol versus time, working temperature and the concentration of the ethanol. It was found that these films had high sensitivity to ethanol, which made them as a good candidate for the ethanol sensor. Finally, the photocatalytic activity of the samples was evaluated with respect to the degradation reaction of a wastewater containing methylene blue (MB) under UV-visible light irradiation. The molybdenum trioxide exhibits a higher degradation rate than the tungsten trioxide thin films under similar experimental conditions.

  14. Effect of Deposition Rate on Structure and Surface Morphology of Thin Evaporated Al Films on Dielectrics and Semiconductors

    DEFF Research Database (Denmark)

    Bordo, K.; Rubahn, H. G.

    2012-01-01

    Aluminum (Al) films with thickness of 100 nm were grown on unheated glass, silicon and mica substrates by electron beam evaporation. The deposition rates were adjusted in the range between 0.1 nm/s and 2 nm/s, the pressure in the vacuum chamber during deposition was lower than 1.10(-3) Pa. The st...

  15. Crystal Structure, Optical, and Electrical Properties of SnSe and SnS Semiconductor Thin Films Prepared by Vacuum Evaporation Techniques for Solar Cell Applications

    Science.gov (United States)

    Ariswan; Sutrisno, H.; Prasetyawati, R.

    2017-05-01

    Thin films of SnSe and SnS semiconductors had been prepared by vacuum evaporation techniques. All prepared samples were characterized on their structure, optical, and electrical properties in order to know their application in technology. The crystal structure of SnSe and SnS was determined by X-Ray Diffraction (XRD) instrument. The morphology and chemical composition were obtained by Scanning Electron Microscopy (SEM) coupled with Energy Dispersive of X-Ray Analysis (EDAX). The optical property such as band gap was determined by DR-UV-Vis (Diffuse Reflectance-Ultra Violet-Visible) spectroscopy, while the electrical properties were determined by measuring the conductivity by four probes method. The characterization results indicated that both SnSe and SnS thin films were polycrystalline. SnSe crystallized in an orthorhombic crystal system with the lattice parameters of a = 11.47 Å, b = 4.152 Å and c = 4.439 Å, while SnS had an orthorhombic crystal system with lattice parameters of a = 4.317 Å, b = 11.647 Å and c = 3.981 Å. Band gaps (Eg) of SnSe and SnS were 1.63 eV and 1.35 eV, respectively. Chemical compositions of both thin films were non-stoichiometric. Molar ratio of Sn : S was close to ideal which was 1 : 0.96, while molar ratio of Sn : S was 1 : 0.84. The surface morphology described the arrangement of the grains on the surface of the thin film with sizes ranging from 0.2 to 0.5 microns. Color similarity on the surface of the SEM images proved a homogenous thin layer.

  16. Photoelectrochemical behavior of Al{sub x}In{sub 1−x}N thin films grown by plasma-assisted dual source reactive evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Alizadeh, M., E-mail: alizadeh_kozerash@yahoo.com; Ganesh, V.; Pandikumar, A.; Goh, B.T.; Azianty, S.; Huang, N.M.; Rahman, S.A., E-mail: saadah@um.edu.my

    2016-06-15

    In this work the dependence of photoelectrochemical (PEC) behavior of Al{sub x}In{sub 1−x}N (0.48 ≤x ≤ 0.66) thin films grown by plasma-assisted dual source reactive evaporation, on the plasma dynamics and the alloys properties was studied. The influence of nitrogen flow rate on the compositional, morphological, structural and optical properties of the as-prepared films were investigated using X-ray photoelectron spectroscopy (XPS), Field emission scanning electron microscopy (FESEM), micro Raman spectroscopy and UV–vis spectroscopy. The PEC study of the as-grown Al{sub x}In{sub 1−x}N thin films targeted for water splitting application were performed in the presence of simulated solar irradiation of AM 1.5G (100 mW/cm{sup 2}). The PEC results revealed that the photocurrent for the Al{sub x}In{sub 1−x}N thin film grown at nitrogen flow rate of 80 sccm is ∼10-fold higher than the dark current. From the Mott–Schottky (MS) plots it was deduced that by increasing N{sub 2} flow rate up to 80 sccm, the flat band potential shifts toward more negative values. The good photoelectrochemical behavior of Al{sub x}In{sub 1−x}N thin films showed that this material could be a potential candidate for PEC water splitting. - Highlights: • Al{sub x}In{sub 1−x}N films were grown by Plasma-aided dual source reactive evaporation. • Effect of nitrogen flow rate on the films properties was investigated. • The band gap of the films decreased from 2.33 to 1.92 eV. • A good photoelectrochemical behavior of the Al{sub x}In{sub 1−x}N thin films was shown. • The photocurrent for the Al{sub 0.55}In{sub 0.45}N films is ∼10-fold higher than dark current.

  17. 1/f noise in titanium doped aluminum thin film deposited by electron beam evaporation method and its dependence on structural variation with temperature

    Science.gov (United States)

    Ananda, P.; Vedanayakam, S. Victor; Thyagarajan, K.; Nandakumar, N.

    2018-05-01

    A brief review of Titanium doped Aluminum film has many attractive properties such as thermal properties and 1/f noise is highlighted. The thin film devices of Titanium doped alluminium are specially used in aerospace technology, automotive, biomedical fields also in microelectronics. In this paper, we discus on 1/f noise and nonlinear effects in titanium doped alluminium thin films deposited on glass substrate using electron beam evaporation for different current densities on varying temperatures of the film. The plots are dawn for 1/f noise of the films at different temperatures ranging from 300°C to 450°C and the slopes are determined. The studies shows a higher order increment in FFT amplitude of low frequency 1/f noise in thin films at annealing temperature 400°C. In this technology used in aerospace has been the major field of application of titanium doped alluminium, being one of the major challenges of the development of new alloys with improved strength at high temperature, wide chord Titanium doped alluminium fan blades increases the efficiency while reducing 1/f noise. Structural properties of XRD is identified.

  18. Strength, stiffness, and microstructure of Cu(In,Ga)Se{sub 2} thin films deposited via sputtering and co-evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Shi; Jang, Dongchan; Greer, Julia R., E-mail: jrgreer@caltech.edu [Division of Applied Science and Engineering, California Institute of Technology, 1200 E California Blvd., Pasadena, California 91125 (United States); Lee, Jiun-Haw [Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, No. 1, Sec 4 Roosevelt, Taipei 10617, Taiwan (China); Liu, Chee-Wee [Department of Electrical Engineering, National Taiwan University, No 1, Sec 4 Roosevelt, Taipei 10617, Taiwan (China); Shieh, Jia-Min; Shen, Chang-Hong; Wu, Tsung-Ta [National Nano Device Laboratories, Hsinchu Science Park, No. 26, Prosperity Road I, Hsinchu 30078, Taiwan (China)

    2014-07-07

    This work examines Cu(In,Ga)Se{sub 2} thin films fabricated by (1) selenization of pre-sputtered Cu-In-Ga and (2) co-evaporation of each constituent. The efficiency disparity between films deposited via these two methods is linked to differences in morphology and microstructure. Atomic force microscopy and scanning electron microscopy show that selenized films have rougher surfaces and poor adhesion to molybdenum back contact. Transmission electron microscopy and electron energy loss spectroscopy revealed multiple voids near the Mo layer in selenized films and a depletion of Na and Se around the voids. Residual stresses in co-evaporated films were found to be ∼1.23 GPa using wafer curvature measurements. Uniaxial compression experiments on 500 nm-diameter nanopillars carved out from co-evaporated films revealed the elastic modulus of 70.4 ± 6.5 GPa. Hertzian contact model applied to nanoindentation data on selenized films revealed the indentation modulus of 68.9 ± 12.4 GPa, which is in agreement with previous reports. This equivalence of the elastic moduli suggests that microstructural differences manifest themselves after the yield point. Typical plastic behavior with two distinct failure modes is observed in the extracted stress-strain results, with the yield strength of 640.9 ± 13.7 MPa for pillars that failed by shearing and 1100.8 ± 77.8 MPa for pillars that failed by shattering.

  19. Effect of Annealing Temperature on CuInSe2/ZnS Thin-Film Solar Cells Fabricated by Using Electron Beam Evaporation

    Directory of Open Access Journals (Sweden)

    H. Abdullah

    2013-01-01

    Full Text Available CuInSe2 (CIS thin films are successfully prepared by electron beam evaporation. Pure Cu, In, and Se powders were mixed and ground in a grinder and made into a pellet. The pallets were deposited via electron beam evaporation on FTO substrates and were varied by varying the annealing temperatures, at room temperature, 250°C, 300°C, and 350°C. Samples were analysed by X-ray diffractometry (XRD for crystallinity and field-emission scanning electron microscopy (FESEM for grain size and thickness. I-V measurements were used to measure the efficiency of the CuInSe2/ZnS solar cells. XRD results show that the crystallinity of the films improved as the temperature was increased. The temperature dependence of crystallinity indicates polycrystalline behaviour in the CuInSe2 films with (1 1 1, (2 2 0/(2 0 4, and (3 1 2/(1 1 6 planes at 27°, 45°, and 53°, respectively. FESEM images show the homogeneity of the CuInSe2 formed. I-V measurements indicated that higher annealing temperatures increase the efficiency of CuInSe2 solar cells from approximately 0.99% for the as-deposited films to 1.12% for the annealed films. Hence, we can conclude that the overall cell performance is strongly dependent on the annealing temperature.

  20. Analysis of thin films prepared by vacuum-evaporation and dropping solution by Takeoff Angle-Dependent X-Ray Fluorescence spectroscopy at glancing incidence

    International Nuclear Information System (INIS)

    Tsuji, Kouichi; Hirokawa, Kichinosuke; Mitose, Kengo.

    1995-01-01

    We have introduced Takeoff Angle-Dependent X-Ray Fluorescence (TAD-XRF) method for thin film and surface analysis. In this method, the sample on the optically flat substrate is irradiated with the glancing incidence of the primary X-ray, and the fluorescent X-rays emitted from the sample are detected at the glancing takeoff angle. We had previously calculated the relationship between the fluorescent X-ray intensity and the takeoff angle at the glancing incidence. The characterization of the thin film is achieved by investigating the dependence of the fluorescent X-ray intensity on the takeoff angle with the calculated curve. Using this analytical method, we have reported the results of the TAD-XRF measured for the evaporated thin films and the dried films from dropping solution in this paper. The effect of the thickness of the thin film, the density of the substrate and the incident angle on the TAD-XRF curve has been reported. In the case of the dried film from the dropping solution, a broad peak was observed at the takeoff angle which was close to the critical angle for the total reflection of the fluorescent X-ray in the TAD-XRF curve. This broad peak was explained by the double-excitation of the incident beam and the refracted beam of the fluorescent X-ray with the assumption that the X-ray which has a same wavelength to the observed fluorescent X-ray impinges upon the sample surface, because the reciprocity theorem is expected in the X-ray region. (author)

  1. Resonant Infrared Matrix-Assisted Pulsed Laser Evaporation Of Inorganic Nanoparticles And Organic/Inorganic Hybrid Nanocomposites

    Science.gov (United States)

    Pate, Ryan; Lantz, Kevin R.; Dhawan, Anuj; Vo-Dinh, Tuan; Stiff-Roberts, Adrienne D.

    2010-10-01

    In this research, resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) has been used to deposit different classes of inorganic nanoparticles, including bare, un-encapsulated ZnO and Au nanoparticles, as well as ligand-encapsulated CdSe colloidal quantum dots (CQDs). RIR-MAPLE has been used for thin-film deposition of different organic/inorganic hybrid nanocomposites using some of these inorganic nanoparticles, including CdSe CQD-poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-(1-cyanovinylene)phenylene] (MEH-CN-PPV) nanocomposites and Au nanoparticle-poly(methyl methacrylate) (PMMA) nanocomposites. The unique contribution of this research is that a technique is demonstrated for the deposition of organic-based thin-films requiring solvents with bond energies that do not have to be resonant with the laser energy. By creating an emulsion of solvent and ice in the target, RIR-MAPLE using a 2.94 μm laser can deposit most material systems because the hydroxyl bonds in the ice component of the emulsion matrix are strongly resonant with the 2.94 μm laser. In this way, the types of materials that can be deposited using RIR-MAPLE has been significantly expanded. Furthermore, materials with different solvent bond energies can be co-deposited without concern for material degradation and without the need to specifically tune the laser energy to each material solvent bond energy, thereby facilitating the realization of organic/inorganic hybrid nanocomposite thin-films. In addition to the structural characterization of the inorganic nanoparticle and hybrid nanocomposite thin-films deposited using this RIR-MAPLE technique, optical characterization is presented to demonstrate the potential of such films for optoelectronic device applications.

  2. Resonant Infrared Matrix-Assisted Pulsed Laser Evaporation Of Inorganic Nanoparticles And Organic/Inorganic Hybrid Nanocomposites

    International Nuclear Information System (INIS)

    Pate, Ryan; Lantz, Kevin R.; Stiff-Roberts, Adrienne D.; Dhawan, Anuj; Vo-Dinh, Tuan

    2010-01-01

    In this research, resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) has been used to deposit different classes of inorganic nanoparticles, including bare, un-encapsulated ZnO and Au nanoparticles, as well as ligand-encapsulated CdSe colloidal quantum dots (CQDs). RIR-MAPLE has been used for thin-film deposition of different organic/inorganic hybrid nanocomposites using some of these inorganic nanoparticles, including CdSe CQD-poly[2-methoxy-5-(2'-ethylhexyloxy )-1,4-(1-cyanovinylene)phenylene](MEH-CN-PPV) nanocomposites and Au nanoparticle-poly(methyl methacrylate)(PMMA) nanocomposites. The unique contribution of this research is that a technique is demonstrated for the deposition of organic-based thin-films requiring solvents with bond energies that do not have to be resonant with the laser energy. By creating an emulsion of solvent and ice in the target, RIR-MAPLE using a 2.94 μm laser can deposit most material systems because the hydroxyl bonds in the ice component of the emulsion matrix are strongly resonant with the 2.94 μm laser. In this way, the types of materials that can be deposited using RIR-MAPLE has been significantly expanded. Furthermore, materials with different solvent bond energies can be co-deposited without concern for material degradation and without the need to specifically tune the laser energy to each material solvent bond energy, thereby facilitating the realization of organic/inorganic hybrid nanocomposite thin-films. In addition to the structural characterization of the inorganic nanoparticle and hybrid nanocomposite thin-films deposited using this RIR-MAPLE technique, optical characterization is presented to demonstrate the potential of such films for optoelectronic device applications.

  3. Studies of thin films of Ti- Zr -V as non-evaporable getter films prepared by RF sputtering

    International Nuclear Information System (INIS)

    Gupta, Nidhi; Jagannath,; Sharma, R. K.; Gadkari, S. C.; Muthe, K. P.; Mukundhan, R.; Gupta, S. K.

    2013-01-01

    Non-Evaporable Getter (NEG) films of the Ti-Zr-V prepared on stainless steel substrates by Radio Frequency sputtering. To observe its getter behavior at the lowest activation temperature, the sample is heated continuously at different temperatures (100°C, 150°C, 200°C and 250°C) for 2 hours. The changes of the surface chemical composition at different temperaturesare analyzed by using XPS and SEM (Scanning Electron Microscopy) techniques. The volume elemental composition of the film has been measured by energy dispersive X-ray spectroscopy (EDX). The in-situ XPS measurements of the activated getter films show the disappearance of the superficial oxide layer through the variation in the oxygen stoichiometry during thermal activation. Results of these studies show that the deposited films of Ti-Zr-V could be used as NEG to produce extreme high vacuum.

  4. Growth of high-quality large-area MgB2 thin films by reactive evaporation

    International Nuclear Information System (INIS)

    Moeckly, B H; Ruby, W S

    2006-01-01

    We report a new in situ reactive deposition thin film growth technique for the production of MgB 2 thin films which offers several advantages over all existing methods and is the first deposition method to enable the production of high-quality MgB 2 films for real-world applications. We have used this growth method, which incorporates a rotating pocket heater, to deposit MgB 2 films on a variety of substrates, including single-crystalline, polycrystalline, metallic, and semiconductor materials up to 4 inch in diameter. This technique allows growth of double-sided, large-area films in the intermediate temperature range of 400-600 deg. C. These films are clean, well-connected, and consistently display T c values of 38-39 K with low resistivity and residual resistivity values. They are also robust and uncommonly stable upon exposure to atmosphere and water. (rapid communication)

  5. CuIn{sub x}Ga{sub 1-x}Se{sub 2} thin films prepared by electron beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Venkatachalam, M.; Kannan, M.D.; Jayakumar, S.; Balasundaraprabhu, R.; Nandakumar, A.K. [Thin Film Center, Department of Physics, PSG College of Technology (India); Muthukumarasamy, N. [Department of Physics, Coimbatore Institute of Technology (India)

    2008-05-15

    CuIn{sub x}Ga{sub 1-x}Se{sub 2} bulk compound of three different compositions x=0.75, 0.80 and 0.85 have been prepared using individual elements of copper, indium, gallium and selenium. Thin films of CuIn{sub x}Ga{sub 1-x}Se{sub 2} have been deposited using the prepared bulk by electron beam evaporation method. The structural studies carried on the deposited films revealed that films annealed at 400 C are crystalline in nature exhibiting chalcopyrite phase. The position of the (1 1 2) peak in the X-ray diffractogram corresponding to the chalcopyrite phase has been found to be dependent on the percentage of gallium in the films. The composition of the prepared bulk and thin films has been identified using energy dispersive X-ray analysis. The photoluminescence spectra of the CuIn{sub x}Ga{sub 1-x}Se{sub 2} films exhibited sharp luminescence peaks corresponding to the band gap of the material. (author)

  6. XPS analysis and structural and morphological characterization of Cu{sub 2}ZnSnS{sub 4} thin films grown by sequential evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Gordillo, G. [Departamento de Física, Universidad Nacional de Colombia, Bogotá (Colombia); Calderón, C., E-mail: clcalderont@unal.edu.co [Departamento de Física, Universidad Nacional de Colombia, Bogotá (Colombia); Bartolo-Pérez, P. [Departamento de Física Aplicada, CINVESTAV-IPN, Mérida, Yuc. (Mexico)

    2014-06-01

    This work describes a procedure to grow single phase Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films with tetragonal-kesterite type structure, through sequential evaporation of the elemental metallic precursors under sulphur vapor supplied from an effusion cell. X-ray diffraction analysis (XRD) is mostly used for phase identification but cannot clearly distinguish the formation of secondary phases such as Cu{sub 2}SnS{sub 3} (CTS) because both compounds have the same diffraction pattern; therefore the use of a complementary technique is needed. Raman scattering analysis was used to distinguish these phases. The influence of the preparation conditions on the morphology and phases present in CZTS thin films were investigated through measurements of scanning electron microscopy (SEM) and XRD, respectively. From transmittance measurements, the energy band gap of the CZTS films was estimated to be around 1.45 eV. The limitation of XRD to identify some of the remaining phases after the growth process are investigated and the results of Raman analysis on the phases formed in samples grown by this method are presented. Further, the influence of the preparation conditions on the homogeneity of the chemical composition in the volume was studied by X-ray photoelectron spectroscopy (XPS) analysis.

  7. Photoluminescence of Eu-doped LiYF4 thin films grown by pulsed laser deposition and matrix-assisted pulsed laser evaporation

    International Nuclear Information System (INIS)

    Stokker-Cheregi, F; Matei, A; Dinescu, M; Secu, C E; Secu, M

    2014-01-01

    Matrix-assisted pulsed laser evaporation (MAPLE) has been investigated as an alternative to the pulsed laser deposition (PLD) technique for Eu 3+ -doped crystalline LiYF 4 thin-films deposition. MAPLE assumes laser ablation of a frozen target made of the material of interest diluted in a solvent, rather than that of a bulk target, of either pressed powder or single crystal, used in the case of PLD. Our approach stems from the assumption that laser ablation of a frozen dilute target would result in thin films with improved morphology, as compared to PLD. Indeed, we find that roughness values of samples obtained by the MAPLE technique are four times lower than in the case of PLD. A lower transmittance was noticed for PLD obtained layers with respect to those grown by MAPLE due to strong scattering of light by the morphological defects. Photoluminescence spectra are showing characteristic Eu 3+ -ion luminescence bands at 578, 591, 612, 650 and 698 nm ( 5 D 0  →  7 F J ); crystal field splitting of the bands indicates dopant ions incorporation in the host material during transfer by either PLD or MAPLE. (paper)

  8. Improving Efficiency of Evaporated Cu2ZnSnS4 Thin Film Solar Cells by a Thin Ag Intermediate Layer between Absorber and Back Contact

    Directory of Open Access Journals (Sweden)

    Hongtao Cui

    2015-01-01

    Full Text Available A 20 nm Ag coating on Mo back contact was adopted to improve the back contact of evaporated Cu2ZnSnS4 (CZTS solar cells. The Ag layer helped reduce the thickness of MoS2 which improves fill factor (FF significantly; additionally, it reduced secondary phases ZnS and SnS2−x, which may help carrier transport; it was also involved in the doping of the absorber layer, which compensated the intrinsic p-type doping and therefore drags down the doping level. The doping involvement may enlarge the depletion region and improve lifetime of the absorber, which led to enhancing open circuit voltage (VOC, short circuit current density (JSC, and efficiency significantly. However, it degrades the crystallinity of the material slightly.

  9. Anisotropy in CdSe quantum rods

    Energy Technology Data Exchange (ETDEWEB)

    Li, Liang-shi [Univ. of California, Berkeley, CA (United States)

    2003-01-01

    The size-dependent optical and electronic properties of semiconductor nanocrystals have drawn much attention in the past decade, and have been very well understood for spherical ones. The advent of the synthetic methods to make rod-like CdSe nanocrystals with wurtzite structure has offered us a new opportunity to study their properties as functions of their shape. This dissertation includes three main parts: synthesis of CdSe nanorods with tightly controlled widths and lengths, their optical and dielectric properties, and their large-scale assembly, all of which are either directly or indirectly caused by the uniaxial crystallographic structure of wurtzite CdSe. The hexagonal wurtzite structure is believed to be the primary reason for the growth of CdSe nanorods. It represents itself in the kinetic stabilization of the rod-like particles over the spherical ones in the presence of phosphonic acids. By varying the composition of the surfactant mixture used for synthesis we have achieved tight control of the widths and lengths of the nanorods. The synthesis of monodisperse CdSe nanorods enables us to systematically study their size-dependent properties. For example, room temperature single particle fluorescence spectroscopy has shown that nanorods emit linearly polarized photoluminescence. Theoretical calculations have shown that it is due to the crossing between the two highest occupied electronic levels with increasing aspect ratio. We also measured the permanent electric dipole moment of the nanorods with transient electric birefringence technique. Experimental results on nanorods with different sizes show that the dipole moment is linear to the particle volume, indicating that it originates from the non-centrosymmetric hexagonal lattice. The elongation of the nanocrystals also results in the anisotropic inter-particle interaction. One of the consequences is the formation of liquid crystalline phases when the nanorods are dispersed in solvent to a high enough

  10. Electrodeposition of epitaxial CdSe on (111) gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Cachet, H.; Cortes, R.; Froment, M. [Universite Pierre et Marie Curie, Paris (France). Phys. des Liquides et Electrochimie; Etcheberry, A. [Institut Lavoisier (IREM) UMR CNRS C0173, Universite de Versailles- St Quentin en Yvelynes, 45 Avenue des Etats Unis, 78035, Versailles (France)

    2000-02-21

    Epitaxial growth of CdSe has been achieved on GaAs(111) by electrodeposition from an aqueous electrolyte. The structure of the film corresponds to the cubic modification of CdSe. The quality of epitaxy has been investigated by reflection high energy electron diffraction, transmission electron microscopy and X-ray diffraction techniques. By XPS measurements the chemistry of the CdSe/GaAs interface and the composition of CdSe are determined. (orig.)

  11. Synthesis and characterisation of Cu{sub 2}ZnSnSe{sub 4} thin films prepared via a vacuum evaporation-based route

    Energy Technology Data Exchange (ETDEWEB)

    Volobujeva, O., E-mail: v.olga@staff.ttu.ee; Bereznev, S.; Raudoja, J.; Otto, K.; Pilvet, M.; Mellikov, E.

    2013-05-01

    Different sequentially stacked binary chalcogenide layers (CuSe, ZnSe, and SnSe) deposited by vacuum evaporation onto molybdenum covered soda-lime glass substrates were used as precursors to form Cu{sub 2}ZnSnSe{sub 4} films. The influence of the stacked binary layer sequence, substrate temperature, both the duration and speed of deposition and the post deposition treatment atmosphere on the structural and the morphological parameters of the Cu{sub 2}ZnSnSe{sub 4} thin films was studied. Our results indicate the possibility of replacing the Se{sub 2} selenisation with a thermal treatment in an SnSe{sub 2} atmosphere to avoid the selenisation of the Mo substrate and MoSe{sub 2} formation. This SnSe{sub 2} treatment forms p-type Cu{sub 2}ZnSnSe{sub 4} films with an optical band-gap of 1.14 eV and a solar cell structure with an efficiency of up to 3%. - Highlights: ► Cu{sub 2}ZnSnSe{sub 4} thin films were grown using binary precursors and selenisation. ► Composition and morphology were studied in dependence of selenisation atmosphere. ► The use of SnSe{sub 2} selenisation allows to avoid Mo substrate selenisation. ► The high quality of films is indicated by the value of their E{sub g} = 1.14 eV. ► Cu{sub 2}ZnSnSe{sub 4} thin films were in p-type conductivity and were realized as solar cells.

  12. Evaporation-Driven Deposition of ITO Thin Films from Aqueous Solutions with Low-Speed Dip-Coating Technique.

    Science.gov (United States)

    Ito, Takashi; Uchiyama, Hiroaki; Kozuka, Hiromitsu

    2017-05-30

    We suggest a novel wet coating process for preparing indium tin oxide (ITO) films from simple solutions containing only metal salts and water via evaporation-driven film deposition during low-speed dip coating. Homogeneous ITO precursor films were deposited on silica glass substrates from the aqueous solutions containing In(NO 3 ) 3 ·3H 2 O and SnCl 4 ·5H 2 O by dip coating at substrate withdrawal speeds of 0.20-0.50 cm min -1 and then crystallized by the heat treatment at 500-800 °C for 10-60 min under N 2 gas flow of 0.5 L min -1 . The ITO films heated at 600 °C for 30 min had a high optical transparency in the visible range and a good electrical conductivity. Multiple-coating ITO films obtained with five-times dip coating exhibited the lowest sheet (ρ S ) and volume (ρ V ) resistivities of 188 Ω sq -1 and 4.23 × 10 -3 Ω cm, respectively.

  13. Enhancement of the optical and electrical properties of ITO thin films deposited by electron beam evaporation technique

    Science.gov (United States)

    Ali, H. M.; Mohamed, H. A.; Mohamed, S. H.

    2005-08-01

    Indium tin oxide (ITO) is widely utilized in numerous industrial applications due to its unique combined properties of transparency to visible light and electrical conductivity. ITO films were deposited on glass substrates by an electron beam evaporation technique at room temperature from bulk samples, with different thicknesses. The film with 1500 Å thick was selected to perform annealing in the temperature range of 200 400 °C and annealing for varying times from 15 to 120 min at 400 °C. The X-ray diffraction of the films was analyzed in order to investigate its dependence on thickness, and annealing. Electrical and optical measurements were also carried out. Transmittance, optical energy gap, refractive index, carrier concentration, thermal emissivity and resistivity were investigated. It was found that the as-deposited films with different thicknesses were highly absorbing and have relatively poor electrical properties. The films become opaque with increasing the film thickness. After thermal annealing, the resistance decreases and a simultaneous variation in the optical transmission occurs. A transmittance value of 85.5% in the IR region and 82% in the visible region of the spectrum and a resistivity of 2.8 × 10-4 Ω Cm were obtained at annealing temperature of 400 °C for 120 min.

  14. A p-silicon nanowire/n-ZnO thin film heterojunction diode prepared by thermal evaporation

    International Nuclear Information System (INIS)

    Hazra, Purnima; Jit, S.

    2014-01-01

    This paper represents the electrical and optical characteristics of a SiNW/ZnO heterojunction diode and subsequent studies on the photodetection properties of the diode in the ultraviolet (UV) wavelength region. In this work, silicon nanowire arrays were prepared on p-type (100)-oriented Si substrate by an electroless metal deposition and etching method with the help of ultrasonication. After that, catalyst-free deposition of zinc oxide (ZnO) nanowires on a silicon nanowire (SiNW) array substrate was done by utilizing a simple and cost-effective thermal evaporation technique without using a buffer layer. The SEM and XRD techniques are used to show the quality of the as-grown ZnO nanowire film. The junction properties of the diode are evaluated by measuring current—voltage and capacitance—voltage characteristics. The diode has a well-defined rectifying behavior with a rectification ratio of 190 at ±2 V, turn-on voltage of 0.5 V, and barrier height is 0.727 eV at room temperature under dark conditions. The photodetection parameters of the diode are investigated in the bias voltage range of ±2 V. The diode shows responsivity of 0.8 A/W at a bias voltage of 2 V under UV illumination (wavelength = 365 nm). The characteristics of the device indicate that it can be used for UV detection applications in nano-optoelectronic and photonic devices. (semiconductor devices)

  15. Microstructural, nanomechanical, and microtribological properties of Pb thin films prepared by pulsed laser deposition and thermal evaporation techniques

    Energy Technology Data Exchange (ETDEWEB)

    Broitman, Esteban, E-mail: esbro@ifm.liu.se [Thin Film Physics Division, IFM, Linköping University, SE-581 83 Linköping (Sweden); Flores-Ruiz, Francisco J. [Thin Film Physics Division, IFM, Linköping University, SE-581 83 Linköping, Sweden and Centro de Investigación y de Estudios Avanzados del I.P.N., Unidad Querétaro, Querétaro 76230 (Mexico); Di Giulio, Massimo [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Gontad, Francisco; Lorusso, Antonella; Perrone, Alessio [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce, Italy and INFN-Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy)

    2016-03-15

    In this work, the authors compare the morphological, structural, nanomechanical, and microtribological properties of Pb films deposited by thermal evaporation (TE) and pulsed laser deposition (PLD) techniques onto Si (111) substrates. Films were investigated by scanning electron microscopy, surface probe microscopy, and x-ray diffraction in θ-2θ geometry to determine their morphology, root-mean-square (RMS) roughness, and microstructure, respectively. TE films showed a percolated morphology with densely packed fibrous grains while PLD films had a granular morphology with a columnar and tightly packed structure in accordance with the zone growth model of Thornton. Moreover, PLD films presented a more polycrystalline structure with respect to TE films, with RMS roughness of 14 and 10 nm, respectively. Hardness and elastic modulus vary from 2.1 to 0.8 GPa and from 14 to 10 GPa for PLD and TE films, respectively. A reciprocal friction test has shown that PLD films have lower friction coefficient and wear rate than TE films. Our study has demonstrated for first time that, at the microscale, Pb films do not show the same simple lubricious properties measured at the macroscale.

  16. TiO2 nanoparticle thin film deposition by matrix assisted pulsed laser evaporation for sensing applications

    International Nuclear Information System (INIS)

    Caricato, A.P.; Capone, S.; Ciccarella, G.; Martino, M.; Rella, R.; Romano, F.; Spadavecchia, J.; Taurino, A.; Tunno, T.; Valerini, D.

    2007-01-01

    The MAPLE technique has been used for the deposition of nanostructured titania (TiO 2 ) nanoparticles thin films to be used for gas sensors applications. An aqueous solution of TiO 2 nanoparticles, synthesised by a novel chemical route, was frozen at liquid nitrogen temperature and irradiated with a pulsed ArF excimer laser in a vacuum chamber. A uniform distribution of TiO 2 nanoparticles with an average size of about 10 nm was deposited on Si and interdigitated Al 2 O 3 substrates as demonstrated by high resolution scanning electron microscopy-field emission gun inspection (SEM-FEG). Energy dispersive X-ray (EDX) analysis revealed the presence of only the titanium and oxygen signals and FTIR (Fourier transform infra-red) revealed the TiO 2 characteristic composition and bond. A comparison with a spin coated thin film obtained from the same solution of TiO 2 nanoparticles is reported. The sensing properties of the films deposited on interdigitated substrates were investigated, too

  17. How do evaporating thin films evolve? Unravelling phase-separation mechanisms during solvent-based fabrication of polymer blends

    KAUST Repository

    Wodo, Olga

    2014-10-13

    © 2014 AIP Publishing LLC. Solvent-based fabrication is a flexible and affordable approach to manufacture polymer thin films. The properties of products made from such films can be tailored by the internal organization (morphology) of the films. However, a precise knowledge of morphology evolution leading to the final film structure remains elusive, thus limiting morphology control to a trial and error approach. In particular, understanding when and where phases are formed, and how they evolve would provide rational guidelines for more rigorous control. Here, we identify four modes of phase formation and subsequent propagation within the thinning film during solvent-based fabrication. We unravel the origin and propagation characteristics of each of these modes. Finally, we construct a mode diagram that maps processing conditions with individual modes. The idea introduced here enables choosing processing conditions to tailor film morphology characteristics and paves the ground for a deeper understanding of morphology control with the ultimate goal of precise, yet affordable, morphology manipulation for a large spectrum of applications.

  18. How do evaporating thin films evolve? Unravelling phase-separation mechanisms during solvent-based fabrication of polymer blends

    KAUST Repository

    Wodo, Olga; Ganapathysubramanian, Baskar

    2014-01-01

    © 2014 AIP Publishing LLC. Solvent-based fabrication is a flexible and affordable approach to manufacture polymer thin films. The properties of products made from such films can be tailored by the internal organization (morphology) of the films. However, a precise knowledge of morphology evolution leading to the final film structure remains elusive, thus limiting morphology control to a trial and error approach. In particular, understanding when and where phases are formed, and how they evolve would provide rational guidelines for more rigorous control. Here, we identify four modes of phase formation and subsequent propagation within the thinning film during solvent-based fabrication. We unravel the origin and propagation characteristics of each of these modes. Finally, we construct a mode diagram that maps processing conditions with individual modes. The idea introduced here enables choosing processing conditions to tailor film morphology characteristics and paves the ground for a deeper understanding of morphology control with the ultimate goal of precise, yet affordable, morphology manipulation for a large spectrum of applications.

  19. Study of structural and morphological properties of thermally evaporated Sn{sub 2}Sb{sub 6}S{sub 11} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ben Mehrez, N., E-mail: najia.benmehrez@gmail.com [Université Tunis El Manar, Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs, ENIT, BP 37, Le belvédère, 1002 Tunis (Tunisia); Khemiri, N. [Université Tunis El Manar, Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs, ENIT, BP 37, Le belvédère, 1002 Tunis (Tunisia); Kanzari, M. [Université Tunis El Manar, Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs, ENIT, BP 37, Le belvédère, 1002 Tunis (Tunisia); Institut Préparatoire aux Etudes d’Ingénieurs de Tunis Montfleury, Université de Tunis (Tunisia)

    2016-10-01

    In this study, we report the structural and morphological properties of the new material Sn{sub 2}Sb{sub 6}S{sub 11} thin films prepared on glass substrates by vacuum thermal evaporation at various substrate temperatures (30, 60, 100, 140, 180 and 200 °C). Sn{sub 2}Sb{sub 6}S{sub 11} ingot was synthesized by the horizontal Bridgman technique. The structural properties of Sn{sub 2}Sb{sub 6}S{sub 11} powder were studied by X-ray diffraction (XRD), transmission electron microscopy (TEM) and Raman spectroscopy. The films were characterized for their structural properties by using XRD. All films were polycrystalline in nature. The variations of the structural parameters of the films with the substrate temperature were investigated. The results show that the crystallite sizes increase as the substrate temperature increases. The morphological properties of the films were analyzed by atomic force microscopy (AFM). The roughness and the topography of the surface of the films strongly depend on the substrate temperature. - Highlights: • Sn{sub 2}Sb{sub 6}S{sub 11} powder was successfully synthesized by the horizontal Bridgman technique. • Sn{sub 2}Sb{sub 6}S{sub 11} films were grown by thermal evaporation at different substrate temperatures. • Structural properties of Sn{sub 2}Sb{sub 6}S{sub 11} powder were investigated. • The effect of the substrate temperature on structural and morphological of Sn{sub 2}Sb{sub 6}S{sub 11} films properties was studied.

  20. Molecular dynamics study on evaporation and condensation characteristics of thin film liquid Argon on nanostructured surface in nano-scale confinement

    Science.gov (United States)

    Hasan, Mohammad Nasim; Rabbi, Kazi Fazle; Sabah, Arefiny; Ahmed, Jannat; Kuri, Subrata Kumar; Rakibuzzaman, S. M.

    2017-06-01

    Investigation of Molecular level phase change phenomena are becoming important in heat and mass transfer research at a very high rate, driven both by the need to understand certain fundamental phenomena as well as by a plethora of new and forthcoming applications in the areas of micro- and nanotechnologies. Molecular dynamics simulation has been carried out to go through the evaporation and condensation characteristics of thin liquid argon film in Nano-scale confinement. In the present study, a cuboid system is modeled for understanding the Nano-scale physics of simultaneous evaporation and condensation. The cuboid system consists of hot and cold parallel platinum plates at the bottom and top ends. The fluid comprised of liquid argon film at the bottom plate and vapor argon in between liquid argon and upper plate of the domain. Three different simulation domains have been created here: (i) Both platinum plates are considered flat, (ii) Upper plate consisting of transverse slots of low height and (iii) Upper plate consisting of transverse slots of bigger height. Considering hydrophilic nature of top and bottom plates, two different high temperatures of the hot wall was set and an observation was made on normal and explosive vaporizations and their impacts on thermal transport. For all the structures, equilibrium molecular dynamics (EMD) was performed to reach equilibrium state at 90 K. Then the lower wall is set to two different temperatures like 110 K and 250 K for all three models to perform non-equilibrium molecular dynamics (NEMD). For vaporization, higher temperature of the hot wall led to faster transport of the liquid argon as a cluster moving from hot wall to cold wall. But excessive temperature causes explosive boiling which seems not good for heat transportation because of less phase change. In case of condensation, an observation was made which indicates that the nanostructured transverse slots facilitate condensation. Two factors affect the rate of

  1. Microstructure and optical studies of electron beam evaporated ZnSe1−xTex nanocrystalline thin films

    International Nuclear Information System (INIS)

    Emam-Ismail, M.; El-Hagary, M.; Shaaban, E.R.; Al-Hedeib, A.M.

    2012-01-01

    Highlights: ► The structural and optical properties of ZnSeTe thin films were studied. ► The micro structural parameters of the films have been determined. ► The room temperature reflectance and transmittance data are analyzed. ► The refractive index and energy gap are determined. ► The single oscillator parameters were calculated. - Abstract: Nanocrystalline thin films of ZnSe 1−x Te x (0.0 ≤ x ≤ 1.0) were deposited on glass substrate using electron beam deposition technique. The structure of the prepared films was examined using X-ray diffraction technique and revealed that the deposited films have polycrystalline zinc blend structure with lattice constant, a, increasing linearly from 0.55816 to 0.59989 nm as x varies from 0 to 1. The optical studies of the nanocrystalline ZnSe 1−x Te x films showed that the refractive index increases and fundamental band gap E g decreases from 2.58 to 2.21 eV as the tellurium concentration increases from 0 to 1. Furthermore, it was also found that the variation of E g with composition shows quadratic behavior with bowing parameter equal to 0.105. In addition, the thickness and annealing effects on the structure and optical properties of the deposited films were also investigated. The refractive index dispersion and its dependence on composition were discussed in terms of single oscillator model proposed by Wemple–DiDomenico.

  2. Role of heat treatment on structural and optical properties of thermally evaporated Ga{sub 10}Se{sub 81}Pb{sub 9} chalcogenide thin films

    Energy Technology Data Exchange (ETDEWEB)

    El-Sebaii, A.A., E-mail: ahmedelsebaii@yahoo.com [Department of Physics, Faculty of Science, King Abdulaziz University, 80203 Jeddah 21589 (Saudi Arabia); Khan, Shamshad A. [Department of Physics, St. Andrews College, Gorakhpur 273001 (India); Al-Marzouki, F.M.; Faidah, A.S.; Al-Ghamdi, A.A. [Department of Physics, Faculty of Science, King Abdulaziz University, 80203 Jeddah 21589 (Saudi Arabia)

    2012-08-15

    Amorphous chalcogenides, based on Se, have become materials of commercial importance and were widely used for optical storage media. The present work deals with the structural and optical properties of Ga{sub 10}Se{sub 81}Pb{sub 9} ternary chalcogenide glass prepared by melt quenching technique. The glass transition, crystallization and melting temperatures of the synthesized glass were measured by non-isothermal DSC measurements at a constant heating rate of 30 K/min. Thin films of thickness 4000 A were prepared by thermal evaporation techniques on glass/Si (1 0 0) wafer substrate. These thin films were thermally annealed for two hours at three different annealing temperatures of 345, 360 and 375 K, which were in between the glass transition and crystallization temperatures of the Ga{sub 10}Se{sub 81}Pb{sub 9} glass. The structural, morphological and optical properties of as-prepared and annealed thin films were studied. Analysis of the optical absorption data showed that the rules of the non-direct transitions predominate. It was also found that the optical band gap decreases while the absorption coefficient, refractive index and extinction coefficient increase with increasing the annealing temperature. Due to the higher values of absorption coefficient and annealing dependence of the optical band gap and optical constants, the investigated material could be used for optical storage. - Highlights: Black-Right-Pointing-Pointer Annealing effect on structure and optical band gap has been investigated. Black-Right-Pointing-Pointer The amorphous nature has been verified by x-ray diffraction and DSC measurements. Black-Right-Pointing-Pointer Thermal annealing causes a decrease in optical band gap in Ga{sub 10}Se{sub 81}Pb{sub 9} thin films. Black-Right-Pointing-Pointer The decrease in optical band gap can be interpreted on the basis of amorphous-crystalline phase transformation. Black-Right-Pointing-Pointer Optical absorption data showed that the rules of the non

  3. Optical properties of P3HT:tributylphosphine oxide-capped CdSe nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Benchaabane, A. [Faculte des Sciences d' Amiens, Laboratoire de Physique de la Matiere Condensee, Amiens (France); Universite Tunis El-Manar, Laboratoire de Materiaux avances et phenomenes quantiques, Faculte des Sciences de Tunis El Manar, Tunis (Tunisia); Universite Arabe des Sciences, Ecole Superieure d' Ingenieurs et des Etudes Technologiques, Tunis (Tunisia); Ben Hamed, Z.; Kouki, F.; Bouchriha, H. [Universite Tunis El-Manar, Laboratoire de Materiaux avances et phenomenes quantiques, Faculte des Sciences de Tunis El Manar, Tunis (Tunisia); Lahmar, A.; Zellama, K.; Zeinert, A. [Faculte des Sciences d' Amiens, Laboratoire de Physique de la Matiere Condensee, Amiens (France); Sanhoury, M.A. [Laboratoire de Chimie Organique Structurale, Synthese et Etudes Physicochimiques, Tunis (Tunisia)

    2016-08-15

    The optical properties of nanocomposite layers prepared by incorporation of tributylphosphine oxide (TBPO)-capped CdSe nanocrystals (NCs) in a P3HT polymer matrix are studied using different nanocrystal concentrations. Reflection spectra analyzed through Kim oscillator model lead to the determination of optical constants such as refractive index n, extinction coefficient k, dielectric permittivity ε and absorption coefficient α. Using the common Cauchy, Drude-Lorentz, Tauc and single-effective-oscillator theoretical models, we have determined the values of static refractive index n{sub s} and permittivity ε{sub s}, plasma frequency ω{sub p}, carrier density N, optical band gap E{sub g} and oscillator and dispersion energies E{sub 0} and E{sub d}, respectively. It is found that TBPO-capped CdSe NCs concentration affects the optoelectronic parameters of the nanocomposite thin films. Moreover, the disorder of this hybrid system is also studied by the determination of Urbach energy, which increases with TBPO-capped CdSe concentration. (orig.)

  4. Electrical and optical transport characterizations of electron beam evaporated V doped In{sub 2}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Islam, Md. Ariful, E-mail: arifapee19@gmail.com [Department of Physics, Rajshahi University of Engineering & Technology (RUET), Rajshahi (Bangladesh); Roy, Ratan Chandra; Hossain, Jaker; Julkarnain, Md.; Khan, Khairul Alam [Department of Applied Physics & Electronic Engineering, University of Rajshahi (Bangladesh)

    2017-01-15

    Vanadium (5 at. %) doped Indium Oxide (V: In{sub 2}O{sub 3}) thin films with different thicknesses (50 nm, 100 nm and 150 nm) were prepared onto glass substrate by electron beam evaporation technique in a vacuum of about 4 x 10{sup -3} Pa. X-ray diffraction (XRD) pattern revealed that the prepared films of thickness 50 nm are amorphous in nature. Temperature dependence of electrical resistivity was studied in the 300 < T < 475 K temperature range. The films exhibit a metallic behavior in the 300 < T < 380 K range with a positive temperature coefficient of the resistivity (TCR), whereas at T > 380 K, the conduction behavior turns into a semiconductor with a negative TCR. Optical studies revealed that the films of thickness 50 nm possess high transmittance of about 86 % in the near-infrared spectral region. The direct optical band gap lies between 3.26 and 3.00 eV depending on the film thickness. (author)

  5. THE STRUCTURE AND SPECTRAL FEATURES OF A THIN DISK AND EVAPORATION-FED CORONA IN HIGH-LUMINOSITY ACTIVE GALACTIC NUCLEI

    International Nuclear Information System (INIS)

    Liu, J. Y.; Liu, B. F.; Qiao, E. L.; Mineshige, S.

    2012-01-01

    We investigate the accretion process in high-luminosity active galactic nuclei (HLAGNs) in the scenario of the disk evaporation model. Based on this model, the thin disk can extend down to the innermost stable circular orbit (ISCO) at accretion rates higher than 0.02 M-dot Edd while the corona is weak since part of the coronal gas is cooled by strong inverse Compton scattering of the disk photons. This implies that the corona cannot produce as strong X-ray radiation as observed in HLAGNs with large Eddington ratio. In addition to the viscous heating, other heating to the corona is necessary to interpret HLAGN. In this paper, we assume that a part of accretion energy released in the disk is transported into the corona, heating up the electrons, and is thereby radiated away. For the first time, we compute the corona structure with additional heating, fully taking into account the mass supply to the corona, and find that the corona could indeed survive at higher accretion rates and that its radiation power increases. The spectra composed of bremsstrahlung and Compton radiation are also calculated. Our calculations show that the Compton-dominated spectrum becomes harder with the increase of energy fraction (f) liberating in the corona, and the photon index for hard X-ray (2-10 keV) is 2.2 bol /L 2-10keV ) increases with increasing accretion rate for f < 8/35, which is roughly consistent with the observational results.

  6. Influence of ion-to-atom ratio on the microstructure of evaporated molybdenum thin films grown using low energy argon ions

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, Praveen Kumar, E-mail: praveenyadav@rrcat.gov.in; Nayak, Maheswar; Rai, Sanjay Kumar; Lodha, Gyanendra Singh [X-ray Optics Section, Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Sant, Tushar; Sharma, Surinder Mohan [High Pressure and Synchrotron Radiation Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Mukherjee, Chandrachur [Mechanical and Optical Support Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

    2014-03-15

    The authors report the effect of argon ion to molybdenum atom ratio (r) on the microstructure of low energy (70 eV) argon ion assisted electron beam evaporated Mo thin films. Surface roughness, morphology, and crystallinity of Mo films are found to strongly depend on “r.” Increase of “r” from 0 to 100 induces gradual loss in crystallinity, reduction in surface roughness and systematic increase in density of the film. For “r” ∼ 100, average atomic density of the film approaches the bulk value (97%) with lowest surface roughness. Further, increasing “r” up to 170 reduces the atomic density, increases roughness, and increase in crystallinity induced by low energy Ar ion beam. The observed surface roughness and grain size determined by x-ray reflectivity and glancing incidence x-ray diffraction correlate well with atomic force microscopy measurements. This study demonstrates that for r = 100 one gets lowest roughness Mo film with highest density and nearly amorphous microstructure. The growth model is discussed by structural zone model.

  7. Flash evaporator

    OpenAIRE

    1997-01-01

    A device and method for flash evaporating a reagent includes an evaporation chamber that houses a dome on which evaporation occurs. The dome is solid and of high thermal conductivity and mass, and may be heated to a temperature sufficient to vaporize a specific reagent. The reagent is supplied from an external source to the dome through a nozzle, and may be supplied as a continuous stream, as a shower, and as discrete drops. A carrier gas may be introduced into the evaporation chamber and cre...

  8. Synthesis, structure and optical properties of thin films from GeS{sub 2}–In{sub 2}S{sub 3} system deposited by thermal co-evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Todorov, R., E-mail: rossen@iomt.bas.bg [Institute of Optical Materials and Technologies “Acad. J. Malinowski”, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Petkov, K. [Institute of Optical Materials and Technologies “Acad. J. Malinowski”, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Kincl, M. [Institute of Macromolecular Chemistry of Czech Academy of Science, Heyrovsky sq. 2, 162 06 Prague 6 (Czech Republic); Černošková, E. [Faculty of Chemical Technology, University of Pardubice, Studentská 84, 532 10 Pardubice (Czech Republic); Vlček, Mil.; Tichý, L. [Institute of Macromolecular Chemistry of Czech Academy of Science, Heyrovsky sq. 2, 162 06 Prague 6 (Czech Republic)

    2014-05-02

    This paper deals with the properties of the glasses and thin films from multi-component chalcogenide prepared by co-evaporation technique. The thin chalcogenide layers from GeS{sub 2}–In{sub 2}S{sub 3} system were deposited by thermal co-evaporation of GeS{sub 2} and In{sub 2}S{sub 3}. Using X-ray microanalysis it was found that the film compositions are closed to the expected ones. X-ray diffraction analysis shows that the thin films deposited by co-evaporation are amorphous. The refractive index, n and the optical band gap, E{sub g}{sup opt} were calculated from the transmittance and reflectance spectra. The thin film's structure was investigated by infrared spectroscopy. It was found that the photo-induced optical changes decrease with increase of indium content while significant thermo-induced changes in the optical properties and structure were observed at 14 at.% indium. The infrared spectra demonstrated high transmittance of the thin films in the range 4000–500 cm{sup −1}. The far-infrared spectra indicated that the indium participates in the glass network of the layers from Ge–S–In system in four coordinated InS{sub 4/2}{sup −} tetrahedral and six-coordinated InS{sub 6/2}{sup 3−} octahedral units. The changes in infrared spectra after annealing of the thin films evidence an increase of population of ethane-like S{sub 3}Ge–GeS{sub 3} units and/or structural or phase change of indium contain units. - Highlights: • The thin layers from GeS{sub 2}–In{sub 2}S{sub 3} system were deposited by thermal co-evaporation. • The photo-induced optical changes decrease with increase of indium content. • The thermo-induced changes in the optical properties and structure were investigated. • The structure of the thin films was investigated by infrared spectroscopy.

  9. Miniature electron bombardment evaporation source: evaporation rate measurement

    International Nuclear Information System (INIS)

    Nehasil, V.; Masek, K.; Matolin, V.; Moreau, O.

    1997-01-01

    Miniature electron beam evaporation sources which operate on the principle of vaporization of source material, in the form of a tip, by electron bombardment are produced by several companies specialized in UHV equipment. These sources are used primarily for materials that are normally difficult to deposit due to their high evaporation temperature. They are appropriate for special applications such as heteroepitaxial thin film growth requiring a very low and well controlled deposition rate. A simple and easily applicable method of evaporation rate control is proposed. The method is based on the measurement of ion current produced by electron bombardment of evaporated atoms. The absolute evaporation flux values were measured by means of the Bayard-Alpert ion gauge, which enabled the ion current vs evaporation flux calibration curves to be plotted. (author). 1 tab., 4 figs., 6 refs

  10. Evidence of room temperature ferromagnetism in argon/oxygen annealed TiO2 thin films deposited by electron beam evaporation technique

    International Nuclear Information System (INIS)

    Mohanty, P.; Kabiraj, D.; Mandal, R.K.; Kulriya, P.K.; Sinha, A.S.K.; Rath, Chandana

    2014-01-01

    TiO 2 thin films deposited by electron beam evaporation technique annealed in either O 2 or Ar atmosphere showed ferromagnetism at room temperature. The pristine amorphous film demonstrates anatase phase after annealing under Ar/O 2 atmosphere. While the pristine film shows a super-paramagnetic behavior, both O 2 and Ar annealed films display hysteresis at 300 K. X-ray photo emission spectroscopy (XPS), Raman spectroscopy, Rutherford’s backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS) were used to refute the possible role of impurities/contaminants in magnetic properties of the films. The saturation magnetization of the O 2 annealed film is found to be higher than the Ar annealed one. It is revealed from shifting of O 1s and Ti 2p core level spectra as well as from the enhancement of high binding energy component of O 1s spectra that the higher magnetic moment is associated with higher oxygen vacancies. In addition, O 2 annealed film demonstrates better crystallinity, uniform deposition and smoother surface than that of the Ar annealed one from glancing angle X-ray diffraction (GAXRD) and atomic force microscopy (AFM). We conclude that although ferromagnetism is due to oxygen vacancies, the higher magnetization in O 2 annealed film could be due to crystallinity, which has been observed earlier in Co doped TiO 2 film deposited by pulsed laser deposition (Mohanty et al., 2012 [10]). - Highlights: • TiO 2 films were deposited by e-beam evaporation technique and post annealed under O 2 /Ar at 500 °C. • The pristine film shows SPM behavior where as O 2 and Ar annealed films demonstrate RTFM. • The presence of magnetic impurities has been discarded by various characterization techniques. • The magnetic moment is found to be higher in O 2 annealed film than the Ar annealed one. • The higher M s in O 2 annealed film is attributed to oxygen vacancies as well as crystallinity

  11. Colloidal CdSe Quantum Rings.

    Science.gov (United States)

    Fedin, Igor; Talapin, Dmitri V

    2016-08-10

    Semiconductor quantum rings are of great fundamental interest because their non-trivial topology creates novel physical properties. At the same time, toroidal topology is difficult to achieve for colloidal nanocrystals and epitaxially grown semiconductor nanostructures. In this work, we introduce the synthesis of luminescent colloidal CdSe nanorings and nanostructures with double and triple toroidal topology. The nanorings form during controlled etching and rearrangement of two-dimensional nanoplatelets. We discuss a possible mechanism of the transformation of nanoplatelets into nanorings and potential utility of colloidal nanorings for magneto-optical (e.g., Aharonov-Bohm effect) and other applications.

  12. Novel mechanical behaviors of wurtzite CdSe nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Bing [Shanghai Normal University, Department of Physics (China); Chen, Li [MCPHS University, School of Arts and Sciences (United States); Xie, Yiqun; Feng, Jie; Ye, Xiang, E-mail: yexiang@shnu.edu.cn [Shanghai Normal University, Department of Physics (China)

    2015-09-15

    As an important semiconducting nanomaterial, CdSe nanowires have attracted much attention. Although many studies have been conducted in the electronic and optical properties of CdSe NWs, the mechanical properties of Wurtzite (WZ) CdSe nanowires remain unclear. Using molecular dynamics simulations, we have studied the tensile mechanical properties and behaviors of [0001]-oriented Wurtzite CdSe nanowires. By monitoring the stretching processes of CdSe nanowires, three distinct structures are found: the WZ wire, a body-centered tetragonal structure with four-atom rings (denoted as BCT-4), and a structure that consists of ten-atom rings with two four-atom rings (denoted as TAR-4) which is observed for the first time. Not only the elastic tensile characteristics are highly reversible under unloading, but a reverse transition between TAR-4 and BCT-4 is also observed. The stretching processes also have a strong dependence on temperature. A tubular structure similar to carbon nanotubes is observed at 150 K, a single-atom chain is formed at 300, 350 and 450 K, and a double-atom chain is found at 600 K. Our findings on tensile mechanical properties of WZ CdSe nanowires does not only provide inspiration to future study on other properties of CdSe nanomaterials but also help design and build efficient nanoscale devices.

  13. Reversible ultrafast melting in bulk CdSe

    International Nuclear Information System (INIS)

    Wu, Wenzhi; He, Feng; Wang, Yaguo

    2016-01-01

    In this work, transient reflectivity changes in bulk CdSe have been measured with two-color femtosecond pump-probe spectroscopy under a wide range of pump fluences. Three regions of reflectivity change with pump fluences have been consistently revealed for excited carrier density, coherent phonon amplitude, and lattice temperature. For laser fluences from 13 to 19.3 mJ/cm 2 , ultrafast melting happens in first several picoseconds. This melting process is purely thermal and reversible. A complete phase transformation in bulk CdSe may be reached when the absorbed laser energy is localized long enough, as observed in nanocrystalline CdSe

  14. Magnetic study of Fe-doped CdSe nanomaterials

    International Nuclear Information System (INIS)

    Das, Sayantani; Banerjee, Sourish; Sinha, T. P.

    2016-01-01

    Nanoparticles of pure and iron (50 %) doped cadmium selenide (CdSe) have been synthesized by soft chemical route. EDAX analysis supports the inclusion of Fe into CdSe nanoparticles. The average particle size of pure and doped CdSe is found to be ∼50 nm from scanning electron microscopy (SEM). Magnetization of the samples are measured under the field cooled (FC) and zero field cooled (ZFC) modes in the temperature range from 5K to 300K applying a magnetic field of 500Oe. Field dependent magnetization (M-H) measurement indicates presence of room temperature (RT) paramagnetism and low temperature (5K) ferromagnetism of the sample.

  15. An investigation of the insertion of the cations H{sup +}, Na{sup +}, K{sup +} on the electrochromic properties of the thermally evaporated WO{sub 3} thin films grown at different substrate temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Patel, K.J. [Applied Physics Department, Faculty of Technology and Engineering, M.S. University of Baroda, Kalabhavan, Vadodara 390001, Gujarat (India); Panchal, C.J., E-mail: cjpanchal_msu@yahoo.com [Applied Physics Department, Faculty of Technology and Engineering, M.S. University of Baroda, Kalabhavan, Vadodara 390001, Gujarat (India); Desai, M.S. [Applied Physics Department, Faculty of Technology and Engineering, M.S. University of Baroda, Kalabhavan, Vadodara 390001, Gujarat (India); Mehta, P.K. [Physics Department, Faculty of Science, M.S. University of Baroda, Vadodara 390002, Gujarat (India)

    2010-11-01

    The phenomenon of electrochromism in tungsten trioxide (WO{sub 3}) thin films has recently attained considerable interest due to their enormous applications in inorganic thin film electrochromic devices. We have investigated the compositional, optical, and electrochromic properties of the WO{sub 3} thin films grown at different substrate temperatures by the thermal evaporation of WO{sub 3} powder. The thin films were characterized using X-ray diffraction (XRD), X-ray photo-emission spectroscopy (XPS), and electrochemical techniques. The XPS analysis suggested that the oxygen to tungsten (O/W) ratio decreases, i.e., the oxygen deficiency increases, on increasing the substrate temperature up to 500 deg. C. The electrochemical analysis provided a comparative study of the coloration efficiency (CE) of the WO{sub 3} thin films intercalated with three different ions viz. H{sup +}, Na{sup +}, and K{sup +}. The effect of the variation of the substrate temperature on the CE and the switching time have also been investigated for the WO{sub 3} thin films intercalated with H{sup +} ions; the thin films deposited at RT and intercalated with H{sup +} ions are found to possess adequate electrochromic properties viz. CE and switching time from device point of view.

  16. Effect of deposition distance on thickness and microstructure of silicon thin film produced by electron beam evaporation; Efeito da distancia de deposicao na espessura e microestrutura de filme fino obtido por evaporacao por feixe de eletrons

    Energy Technology Data Exchange (ETDEWEB)

    Toledo, T.F.; Ramanery, F.P.; Branco, J.R.T. [Fundacao Centro Tecnologico de Minas Gerais, Belo Horizonte, MG (Brazil)], e-mail: thalitaqui@yahoo.com.br; Cunha, M.A. [Acos Especiais Itabira S.A. (Acesita), Belo Horizonte, MG (Brazil)

    2006-07-01

    The interest for materials with new characteristics and properties made thin films an area of highest research interest. Silicon thin films have been widely used in solar cells, being the main active layer. In this work, the effect of deposition distance on thickness and microstructure of silicon films was investigated. The electron beam evaporation technique with argon plasma assistance was used to obtain films on stainless steel 304, Fe-Si alloy and soda lime glass. The experiments were made varying electron beam current and deposition pressure. The results are discussed based on Hertz-Knudsen's law and thin films microstructure evolution models. The samples were characterized by scanning electron microscopy, atomic force microscopy, X-ray diffraction and profilometer. (author)

  17. Temperature studies of optical parameters of (Ag3AsS3)0.6(As2S3)0.4 thin films prepared by rapid thermal evaporation and pulse laser deposition

    Science.gov (United States)

    Studenyak, I. P.; Kutsyk, M. M.; Buchuk, M. Yu.; Rati, Y. Y.; Neimet, Yu. Yu.; Izai, V. Yu.; Kökényesi, S.; Nemec, P.

    2016-02-01

    (Ag3AsS3)0.6(As2S3)0.4 thin films were deposited using rapid thermal evaporation (RTE) and pulse laser deposition (PLD) techniques. Ag-enriched micrometre-sized cones (RTE) and bubbles (PLD) were observed on the thin film surface. Optical transmission spectra of the thin films were studied in the temperature range 77-300 K. The Urbach behaviour of the optical absorption edge in the thin films due to strong electron-phonon interaction was observed, the main parameters of the Urbach absorption edge were determined. Temperature dependences of the energy position of the exponential absorption edge and the Urbach energy are well described in the Einstein model. Dispersion and temperature dependences of refractive indices were analysed; a non-linear increase of the refractive indices with temperature was revealed. Disordering processes in the thin films were studied and compared with bulk composites, the differences between the thin films prepared by RTE and PLD were analysed.

  18. Optical and structural study of In{sub 2}S{sub 3} thin films growth by co-evaporation and chemical bath deposition (CBD) on Cu{sub 3}BiS{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Mesa, F., E-mail: fgmesar@unal.edu.co [Unidad de Estudios Universitarios, Colegio Mayor de Nuestra Señora del Rosario, Cra. 24 N° 63C-69, Bogotá (Colombia); Chamorro, W. [Université de Lorraine, Institut Jean Lamour, Nancy (France); Hurtado, M. [Departamento de Quimica, Universidad Nacional de Colombia, Cra. 30 N° 45-03, Bogotá (Colombia); Departamento de Física, Universidad de los Andes, Calle 21 No. 1-20, Bogotá (Colombia)

    2015-09-30

    Highlights: • In{sub 2}S{sub 3} thin films usually grow like an ultrathin. • Samples grown by CBD have a higher degree of coverage of the substrate unlike co-evaporation method. • Solar cells of Al/TCO/In{sub 2}S{sub 3}/Cu{sub 3}BiS{sub 3}/Mo structure. • In{sub 2}S{sub 3} thin films were deposited on Cu{sub 3}BiS{sub 3} (CBS), with of In{sub 2}S{sub 3} β-phase with tetragonal structure. - Abstract: We present the growth of In{sub 2}S{sub 3} onto Cu{sub 3}BiS{sub 3} layers and soda-lime glass (SLG) substrates by using chemical bath deposition (CBD) and physical co-evaporation. The results reveal that the microstructure and the optical properties of the In{sub 2}S{sub 3} films are highly dependent on the growth method. X-ray diffractrograms show that In{sub 2}S{sub 3} films have a higher crystallinity when growing by co-evaporation than by CBD. In{sub 2}S{sub 3} thin films grown by CBD with a thickness below 170 nm have an amorphous structure however when increasing the thickness the films exhibit two diffraction peaks associated to the (1 0 3) and (1 0 7) planes of the β-In{sub 2}S{sub 3} tetragonal structure. It was also found that the In{sub 2}S{sub 3} films present an energy bandgap (E{sub g}) of about 2.75 eV, regardless of the thickness of the samples.

  19. Composition-controlled optical properties of colloidal CdSe quantum dots

    International Nuclear Information System (INIS)

    Ayele, Delele Worku; Su, Wei-Nien; Chou, Hung-Lung; Pan, Chun-Jern; Hwang, Bing-Joe

    2014-01-01

    Graphical abstract: - Highlights: • The surface of CdSe QDs are modified with cadmium followed by selenium. • The optical properties of CdSe QDs can be controlled by manipulating the composition. • Surface compositional change affects the surface defects or traps and recombination. • The surface trapping state can be controlled by tuning the surface composition. • A change in composition shows a change in the carrier life time. - Abstract: A strategy with respect to band gap engineering by controlling the composition of CdSe quantum dots (QDs) is reported. After the CdSe QDs are prepared, their compositions can be effectively manipulated from 1:1 (Cd:Se) CdSe QDs to Cd-rich and then to Se-rich QDs. To obtain Cd-rich CdSe QDs, Cd was deposited on equimolar CdSe QDs. Further deposition of Se on Cd-rich CdSe QDs produced Se-rich CdSe QDs. The compositions (Cd:Se) of the as-prepared CdSe quantum dots were acquired by Energy-dispersive X-ray spectroscopy (EDX). By changing the composition, the overall optical properties of the CdSe QDs can be manipulated. It was found that as the composition of the QDs changes from 1:1 (Cd:Se) CdSe to Cd-rich and then Se-rich CdSe, the band gap decreases along with a red shift of UV–vis absorption edges and photoluminescence (PL) peaks. The quantum yield also decreases with surface composition from 1:1 (Cd:Se) CdSe QDs to Cd-rich and then to Se-rich, largely due to the changes in the surface state. Because of the involvement of the surface defect or trapping state, the carrier life time increased from the 1:1 (Cd:Se) CdSe QDs to the Cd-rich to the Se-rich CdSe QDs. We have shown that the optical properties of CdSe QDs can be controlled by manipulating the composition of the surface atoms. This strategy can potentially be extended to other semiconductor nanocrystals to modify their properties

  20. Composition-controlled optical properties of colloidal CdSe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Ayele, Delele Worku [Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Department of Chemistry, Bahir Dar University, Bahir Dar (Ethiopia); Su, Wei-Nien, E-mail: wsu@mail.ntust.edu.tw [Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Chou, Hung-Lung [Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Pan, Chun-Jern [Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Hwang, Bing-Joe, E-mail: bjh@mail.ntust.edu.tw [Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan (China)

    2014-12-15

    Graphical abstract: - Highlights: • The surface of CdSe QDs are modified with cadmium followed by selenium. • The optical properties of CdSe QDs can be controlled by manipulating the composition. • Surface compositional change affects the surface defects or traps and recombination. • The surface trapping state can be controlled by tuning the surface composition. • A change in composition shows a change in the carrier life time. - Abstract: A strategy with respect to band gap engineering by controlling the composition of CdSe quantum dots (QDs) is reported. After the CdSe QDs are prepared, their compositions can be effectively manipulated from 1:1 (Cd:Se) CdSe QDs to Cd-rich and then to Se-rich QDs. To obtain Cd-rich CdSe QDs, Cd was deposited on equimolar CdSe QDs. Further deposition of Se on Cd-rich CdSe QDs produced Se-rich CdSe QDs. The compositions (Cd:Se) of the as-prepared CdSe quantum dots were acquired by Energy-dispersive X-ray spectroscopy (EDX). By changing the composition, the overall optical properties of the CdSe QDs can be manipulated. It was found that as the composition of the QDs changes from 1:1 (Cd:Se) CdSe to Cd-rich and then Se-rich CdSe, the band gap decreases along with a red shift of UV–vis absorption edges and photoluminescence (PL) peaks. The quantum yield also decreases with surface composition from 1:1 (Cd:Se) CdSe QDs to Cd-rich and then to Se-rich, largely due to the changes in the surface state. Because of the involvement of the surface defect or trapping state, the carrier life time increased from the 1:1 (Cd:Se) CdSe QDs to the Cd-rich to the Se-rich CdSe QDs. We have shown that the optical properties of CdSe QDs can be controlled by manipulating the composition of the surface atoms. This strategy can potentially be extended to other semiconductor nanocrystals to modify their properties.

  1. A study of the conjugation of CdSe nanoparticles with functional polyoxometalates involving aminoacids

    International Nuclear Information System (INIS)

    Gutul, T.

    2013-01-01

    CdSe nanoparticles (CdSe NPs) are regarded as nano markers and an important component for biomedical applications. In this study, CdSe NPs and polyoxometalates were synthesized; surface modification with 1-thioglycerol and (β-Ala) was carried out. Polyoxometalates, which cause an inhibitory effect on cancer cells, were conjugated to the nanoparticles. UV- VIS, IR, XRD, and TEM studies were performed to characterize the resulting CdSe NPs, polyoxometalates, and conjugates. (author)

  2. Use of a thin-film evaporator for bitumen coating of radioactive concentrates; Utilisation d'un evaporateur a couche mince pour l'enrobage par le bitume de concentrats radioactifs

    Energy Technology Data Exchange (ETDEWEB)

    Lefillatre, G; Rodier, J; Hullo, R; Cudel, Y; Rodi, L [Commissariat a l' Energie Atomique, Chusclan (France). Centre de Production de Plutonium de Marcoule

    1969-07-01

    Following the development in the laboratory of a process for coating evaporation concentrates with bitumen, a technological study of this coating process has been undertaken. The report describes a pilot installation for the bitumen coating of concentrates, which uses a thin-film evaporator LUWA L 150. The first, inactive series of tests was designed to determine the maximum and optimum capacities of the evaporator by varying the amounts of bitumen and of concentrate, the rotor speed and the thermo-fluid temperature. Two rotors were tested, one of conventional type, the other a model especially designed for high viscosity products. The maximum capacity of evaporation of the apparatus is 72 kg/hr for a heating temperature of 221 deg. C. During normal operation, the evaporator can produce 50 kg/hr of coated product containing 55 to 60 per cent of bitumen (Mexphalte 40/50), the water content of the product remaining under 0.5 per cent. A second series of tests will shortly be carried out on this pilot installation using, in particular, bituminous emulsions containing mainly Mexphalte 40/50 and 80/100. (authors) [French] A la suite de la mise au point en laboratoire d'un procede d'enrobage par le bitume de concentrats d'evaporation, une etude technologique de cet enrobage a ete entreprise. Ce rapport decrit une installation pilote d'enrobage par le bitume de concentrats utilisant un evaporateur a couche mince LUWA L 150. La premiere serie d'essais en inactif a eu pour but de definir les capacites maximales et optimales de l'evaporateur en faisant varier les dosages en bitume et en concentrats, la vitesse du rotor et la temperature du thermo-fluide. Deux rotors ont ete testes, l'un de type classique, l'autre d'un modele special concu pour les produits de haute viscosite. La capacite d'evaporation maximale de l'appareil est de 72 kg/h d'eau pour une temperature de chauffage de 221 deg. C. En marche normale l'evaporateur peut debiter 50 kg/h d'enrobe compose de 55 a 60

  3. Evaporator bulb

    International Nuclear Information System (INIS)

    Stoll, W.

    1977-01-01

    In order to prevent the hazard of a possible excursion in an evaporator bulb for radioactive liquids there is provided in the bottom of the vessel a recess filled with a neutron-absorbing and moderating material. The bottom drain pipe is coming out sideways and connected with a heated pipe feeding above into the vessel tangentially. (TK) [de

  4. Evaporating firewalls

    Science.gov (United States)

    Van Raamsdonk, Mark

    2014-11-01

    In this note, we begin by presenting an argument suggesting that large AdS black holes dual to typical high-energy pure states of a single holographic CFT must have some structure at the horizon, i.e. a fuzzball/firewall, unless the procedure to probe physics behind the horizon is state-dependent. By weakly coupling the CFT to an auxiliary system, such a black hole can be made to evaporate. In a case where the auxiliary system is a second identical CFT, it is possible (for specific initial states) that the system evolves to precisely the thermofield double state as the original black hole evaporates. In this case, the dual geometry should include the "late-time" part of the eternal AdS black hole spacetime which includes smooth spacetime behind the horizon of the original black hole. Thus, if a firewall is present initially, it evaporates. This provides a specific realization of the recent ideas of Maldacena and Susskind that the existence of smooth spacetime behind the horizon of an evaporating black hole can be enabled by maximal entanglement with a Hawking radiation system (in our case the second CFT) rather than prevented by it. For initial states which are not finely-tuned to produce the thermofield double state, the question of whether a late-time infalling observer experiences a firewall translates to a question about the gravity dual of a typical high-energy state of a two-CFT system.

  5. Effect of the RE (RE = Eu, Er) doping on the structural and textural properties of mesoporous TiO{sub 2} thin films obtained by evaporation induced self-assembly method

    Energy Technology Data Exchange (ETDEWEB)

    Borlaf, Mario, E-mail: mborlaf@icv.csic.es [Instituto de Cerámica y Vidrio, CSIC, C/Kelsen, 5, Cantoblanco, E-28049 Madrid (Spain); Caes, Sebastien; Dewalque, Jennifer [LCIS-GREENMAT, Institute of Chemistry, University of Liege, B6 Sart Tilman, 4000 Liege (Belgium); Colomer, María Teresa; Moreno, Rodrigo [Instituto de Cerámica y Vidrio, CSIC, C/Kelsen, 5, Cantoblanco, E-28049 Madrid (Spain); Cloots, Rudi; Boschini, Frederic [LCIS-GREENMAT, Institute of Chemistry, University of Liege, B6 Sart Tilman, 4000 Liege (Belgium); APTIS, Institute of Physics, University of Liege, B5 Sart Tilman, 4000 Liege (Belgium)

    2014-05-02

    Polymeric sol–gel route has been used for the preparation of TiO{sub 2} and RE{sub 2}O{sub 3–}TiO{sub 2} (RE = Eu, Er) mesoporous thin films by evaporation induced self-assembly method using Si (100) as a substrate. The influence of the relative humidity (RH) on the preparation of the film has been studied being necessary to work under 40% RH in order to obtain homogeneous and transparent thin films. The films were annealed at different temperatures until 900 °C/1 h and the anatase crystallization and its crystal size evolution were followed by low angle X-ray diffraction. Neither the anatase–rutile transition nor the formation of other compounds was observed in the studied temperature range. Ellipsoporosimetry studies demonstrated that the thickness of the thin films did not change after calcination at 500 °C, the porosity was constant until 700 °C, the pore size increased and the specific surface area decreased with temperature. Moreover, the effect of the doping with Er{sup 3+} and Eu{sup 3+} was studied and a clear inhibition of the crystal growth and the sintering process was detected (by transmission electron and atomic force microscopy) when the doped films are compared with the undoped ones. Finally, Eu{sup 3+} and Er{sup 3+} f–f transitions were detected by PL measurements. - Highlights: • Eu and Er–TiO{sub 2} mesoporous films were prepared by evaporation induced self-assembly. • Influence of humidity on porosity and photoluminescent properties has been tested. • Influence of calcination on structural and textural properties has been also studied. • f–f transitions indicate that the thin films are active photoluminescent materials.

  6. Effect of the RE (RE = Eu, Er) doping on the structural and textural properties of mesoporous TiO2 thin films obtained by evaporation induced self-assembly method

    International Nuclear Information System (INIS)

    Borlaf, Mario; Caes, Sebastien; Dewalque, Jennifer; Colomer, María Teresa; Moreno, Rodrigo; Cloots, Rudi; Boschini, Frederic

    2014-01-01

    Polymeric sol–gel route has been used for the preparation of TiO 2 and RE 2 O 3– TiO 2 (RE = Eu, Er) mesoporous thin films by evaporation induced self-assembly method using Si (100) as a substrate. The influence of the relative humidity (RH) on the preparation of the film has been studied being necessary to work under 40% RH in order to obtain homogeneous and transparent thin films. The films were annealed at different temperatures until 900 °C/1 h and the anatase crystallization and its crystal size evolution were followed by low angle X-ray diffraction. Neither the anatase–rutile transition nor the formation of other compounds was observed in the studied temperature range. Ellipsoporosimetry studies demonstrated that the thickness of the thin films did not change after calcination at 500 °C, the porosity was constant until 700 °C, the pore size increased and the specific surface area decreased with temperature. Moreover, the effect of the doping with Er 3+ and Eu 3+ was studied and a clear inhibition of the crystal growth and the sintering process was detected (by transmission electron and atomic force microscopy) when the doped films are compared with the undoped ones. Finally, Eu 3+ and Er 3+ f–f transitions were detected by PL measurements. - Highlights: • Eu and Er–TiO 2 mesoporous films were prepared by evaporation induced self-assembly. • Influence of humidity on porosity and photoluminescent properties has been tested. • Influence of calcination on structural and textural properties has been also studied. • f–f transitions indicate that the thin films are active photoluminescent materials

  7. Cathodic deposition of CdSe films from dimethyl formamide solution at optimized temperature

    Energy Technology Data Exchange (ETDEWEB)

    Datta, J. [Department of Chemistry, Bengal Engineering and Science University, Shibpur, Howrah 711 103, West Bengal (India)]. E-mail: jayati_datta@rediffmail.com; Bhattacharya, C. [Department of Chemistry, Bengal Engineering and Science University, Shibpur, Howrah 711 103, West Bengal (India); Visiting Research Associate, School of Materials Science and Engineering, UNSW (Australia); Bandyopadhyay, S. [School of Materials Science and Engineering, UNSW, Sydney 2052 (Australia)

    2006-12-15

    In the present paper, thin film CdSe compound semiconductors have been electroplated on transparent conducting oxide coated glass substrates from nonaqueous dimethyl formamide bath containing CdCl{sub 2}, KI and Se under controlled temperature ranging from 100 to 140 deg. C. Thickness of the deposited films as obtained through focussed ion beam technique as well as their microstructural and photoelectrochemical properties have been found to depend on temperature. The film growth was therefore optimized at a bath temperature {approx}125 deg. C. The formation of crystallites in the range of 100-150 nm size has been ascertained through atomic force microscopy and scanning electron microscopy. Energy dispersive analysis of X-rays for the as deposited film confirmed the 1:1 composition of CdSe compound in the matrix exhibiting band-gap energy of 1.74 eV. Microstructural properties of the deposited films have been determined through X-ray diffraction studies, high-resolution transmission electron microscopy and electron diffraction pattern analysis. Electrochemical impedance spectroscopy and current-potential measurements have been performed to characterize the electrochemical behavior of the semiconductor-electrolyte interface. The photo-activity of the films have been recorded in polysulphide solution under illumination and solar conversion efficiency {>=}1% was achieved.

  8. Liquid evaporation process and evaporator

    International Nuclear Information System (INIS)

    Bergey, Claude; Ravenel, Jacques.

    1975-01-01

    The process described enables a liquid to be evaporated rapidly without any projection. A jet of hot gas is applied to the liquid, the power and angle of the jet being chosen so as to spin the liquid. It is particularly used in the case of radioactive products [fr

  9. Electrical and optical properties of thermally-evaporated thin films from A2[TiO(C2O4)2] (A = K, PPh4) and 1,8-dihydroxyanthraquinone

    International Nuclear Information System (INIS)

    Carbia-Ruelas, E.; Sanchez-Vergara, M.E.; Garcia-Montalvo, V.; Morales-Saavedra, O.G.; Alvarez-Bada, J.R.

    2011-01-01

    In this work, the synthesis of molecular materials formed from A 2 [TiO(C 2 O 4 ) 2 ] (A = K, PPh4) and 1,8 dihydroxyanthraquinone is reported. The synthesized materials were characterized by atomic force microscopy (AFM), infrared (IR) and ultraviolet-visible (UV-vis) spectroscopy. IR spectroscopy showed that the molecular-material thin-films, deposited by vacuum thermal evaporation, exhibit the same intra-molecular vibration modes as the starting powders, which suggests that the thermal evaporation process does not alter the initial chemical structures. Electrical transport properties were studied by dc conductivity measurements. The electrical activation energies of the complexes, which were in the range of 0.003-1.16 eV, were calculated from Arrhenius plots. Optical absorption studies in the wavelength range of 190-1090 nm at room temperature showed that the optical band gaps of the thin films were around 1.9-2.3 eV for direct transitions Eg d . The cubic NLO effects were substantially enhanced for materials synthesized from K 2 [TiO(C 2 O 4 ) 2 ], where χ (3) (-3ω; ω, ω, ω) values in the promising range of 10 -12 esu have been evaluated.

  10. Electrical and optical properties of thermally-evaporated thin films from A{sub 2}[TiO(C{sub 2}O{sub 4}){sub 2}] (A = K, PPh{sub 4}) and 1,8-dihydroxyanthraquinone

    Energy Technology Data Exchange (ETDEWEB)

    Carbia-Ruelas, E. [Coordinacion de Ingenieria Mecatronica. Facultad de Ingenieria, Universidad Anahuac Mexico Norte. Avenida Universidad Anahuac 46, Col. Lomas Anahuac, 52786, Huixquilucan (Mexico); Sanchez-Vergara, M.E., E-mail: elena.sanchez@anahuac.mx [Coordinacion de Ingenieria Mecatronica. Facultad de Ingenieria, Universidad Anahuac Mexico Norte. Avenida Universidad Anahuac 46, Col. Lomas Anahuac, 52786, Huixquilucan (Mexico); Garcia-Montalvo, V. [Instituto de Quimica, Universidad Nacional Autonoma de Mexico. Circuito Exterior, Ciudad Universitaria, 04510, Mexico, D. F (Mexico); Morales-Saavedra, O.G. [Centro de Ciencias Aplicadas y Desarrollo Tecnologico, Universidad Nacional Autonoma de Mexico, CCADET-UNAM. A. P. 70-186, Coyoacan, 04510, Mexico, D. F (Mexico); Alvarez-Bada, J.R. [Coordinacion de Ingenieria Mecatronica. Facultad de Ingenieria, Universidad Anahuac Mexico Norte. Avenida Universidad Anahuac 46, Col. Lomas Anahuac, 52786, Huixquilucan (Mexico)

    2011-02-01

    In this work, the synthesis of molecular materials formed from A{sub 2}[TiO(C{sub 2}O{sub 4}){sub 2}] (A = K, PPh4) and 1,8 dihydroxyanthraquinone is reported. The synthesized materials were characterized by atomic force microscopy (AFM), infrared (IR) and ultraviolet-visible (UV-vis) spectroscopy. IR spectroscopy showed that the molecular-material thin-films, deposited by vacuum thermal evaporation, exhibit the same intra-molecular vibration modes as the starting powders, which suggests that the thermal evaporation process does not alter the initial chemical structures. Electrical transport properties were studied by dc conductivity measurements. The electrical activation energies of the complexes, which were in the range of 0.003-1.16 eV, were calculated from Arrhenius plots. Optical absorption studies in the wavelength range of 190-1090 nm at room temperature showed that the optical band gaps of the thin films were around 1.9-2.3 eV for direct transitions Eg{sub d}. The cubic NLO effects were substantially enhanced for materials synthesized from K{sub 2}[TiO(C{sub 2}O{sub 4}){sub 2}], where {chi}{sup (3)} (-3{omega}; {omega}, {omega}, {omega}) values in the promising range of 10{sup -12} esu have been evaluated.

  11. Analytical Solutions of Heat Transfer and Film Thickness with Slip Condition Effect in Thin-Film Evaporation for Two-Phase Flow in Microchannel

    Directory of Open Access Journals (Sweden)

    Ahmed Jassim Shkarah

    2015-01-01

    Full Text Available Physical and mathematical model has been developed to predict the two-phase flow and heat transfer in a microchannel with evaporative heat transfer. Sample solutions to the model were obtained for both analytical analysis and numerical analysis. It is assumed that the capillary pressure is neglected (Morris, 2003. Results are provided for liquid film thickness, total heat flux, and evaporating heat flux distribution. In addition to the sample calculations that were used to illustrate the transport characteristics, computations based on the current model were performed to generate results for comparisons with the analytical results of Wang et al. (2008 and Wayner Jr. et al. (1976. The calculated results from the current model match closely with those of analytical results of Wang et al. (2008 and Wayner Jr. et al. (1976. This work will lead to a better understanding of heat transfer and fluid flow occurring in the evaporating film region and develop an analytical equation for evaporating liquid film thickness.

  12. Photoluminescence of polycrystalline CuIn 0.5 Ga 0.5 Te 2 thin films grown by flash evaporation

    KAUST Repository

    Yandjah, L.; Bechiri, L.; Benabdeslem, M.; Benslim, N.; Amara, A.; Portier, X.; Bououdina, M.; Ziani, Ahmed

    2018-01-01

    Polycrystalline CuIn0.5Ga0.5Te2 films were deposited by flash evaporation from ingot prepared by reacting, in stoichiometric proportions, high purity Cu, In, Ga and Te elements in vacuum sealed quartz . The as-obtained films were characterized by X

  13. Influence of Evaporation on Soap Film Rupture.

    Science.gov (United States)

    Champougny, Lorène; Miguet, Jonas; Henaff, Robin; Restagno, Frédéric; Boulogne, François; Rio, Emmanuelle

    2018-03-13

    Although soap films are prone to evaporate due to their large surface to volume ratio, the effect of evaporation on macroscopic film features has often been disregarded in the literature. In this work, we experimentally investigate the influence of environmental humidity on soap film stability. An original experiment allows to measure both the maximum length of a film pulled at constant velocity and its thinning dynamics in a controlled atmosphere for various values of the relative humidity [Formula: see text]. At first order, the environmental humidity seems to have almost no impact on most of the film thinning dynamics. However, we find that the film length at rupture increases continuously with [Formula: see text]. To rationalize our observations, we propose that film bursting occurs when the thinning due to evaporation becomes comparable to the thinning due to liquid drainage. This rupture criterion turns out to be in reasonable agreement with an estimation of the evaporation rate in our experiment.

  14. Denton E-beam Evaporator #2

    Data.gov (United States)

    Federal Laboratory Consortium — Description:CORAL Name: E-Beam Evap 2This is an electron gun evaporator for the deposition of metals and dielectrics thin films. Materials available are: Ag, Al, Au,...

  15. Denton E-beam Evaporator #1

    Data.gov (United States)

    Federal Laboratory Consortium — Description:CORAL Name: E-Beam Evap 1This is a dual e-beam/thermal evaporator for the deposition of metal and dielectric thin films. Materials available are: Ag, Al,...

  16. Optics of colloidal quantum-confined CdSe nanoscrolls

    Energy Technology Data Exchange (ETDEWEB)

    Vasiliev, R B; Sokolikova, M S [M. V. Lomonosov Moscow State University, Moscow (Russian Federation); Vitukhnovskii, A G; Ambrozevich, S A; Selyukov, A S; Lebedev, V S [P N Lebedev Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)

    2015-09-30

    Nanostructures in the form of 1.2-nm-thick colloidal CdSe nanoplatelets rolled into scrolls are investigated. The morphology of these scrolls is analysed and their basic geometric parameters are determined (diameter 29 nm, longitudinal size 100 – 150 nm) by TEM microscopy. Absorption and photoluminescence spectra of these objects are recorded, and the luminescence decay kinetics is studied. It is shown that the optical properties of CdSe nanoscrolls differ significantly from the properties of CdSe quantum dots and that these nanoscrolls are attractive for nanophotonic devices due to large oscillator strengths of the transition, small widths of excitonic peaks and short luminescence decay times. Nanoscrolls can be used to design hybrid organic–inorganic pure-color LEDs with a high luminescence quantum yield and low operating voltages. (optics and technology of nanostructures)

  17. SYNTHESIS AND CHARACTERIZATION OF CdSe COLLOIDAL QUANTUM DOTS IN ORGANIC SOLVENT

    Directory of Open Access Journals (Sweden)

    Ion Geru

    2014-06-01

    Full Text Available In this paper we present experimental results on preparation and characterization of colloidal CdSe quantum dots in organic solvent. CdSe QDs were synthesized following a modified literature method. CdSe QDs were isolated by adding acetone to the cooled solution followed by centrifugation. CdSe QDs have been characterized by UV-Vis absorption and photoluminescent (PL spectroscopy. The average CdSe particles size estimated from the UV-Vis absorption spectra was found to be in the range 2.28-2.92 nm which is in good agreement with PL measurements.

  18. Seed-mediated direct growth of CdSe nanoclusters on substrates

    International Nuclear Information System (INIS)

    Pan Shangke; Ebrahim, Shaker; Soliman, Moataz; Qiao Qiquan

    2013-01-01

    Different shapes of CdSe nanostructures were obtained by hydrothermal method with varied Se sources and buffer layers. Hexagonal nanoparticles of CdSe with Wurtzite structure were synthesized from Se powder resource, while CdSe nanoclusters with Wurtzite structure were grown from Na 2 SeO 3 aqueous solution resources at 165 °C using cetyltrimethylammonium bromide as surfactant. Using ZnO nanoparticles as a seed layer, CdSe nanostructures only partially covered the indium tin oxide (ITO) substrates. With ZnO/CdSe quantum dots composite seed layer, CdSe nanostructures fully covered the ITO substrates.

  19. Optimization of charge transfer and transport processes at the CdSe quantum dots/TiO2 nanorod interface by TiO2 interlayer passivation

    International Nuclear Information System (INIS)

    Jaramillo-Quintero, O A; Rincon, M E; Triana, M A

    2017-01-01

    Surface trap states hinder charge transfer and transport properties in TiO 2 nanorods (NRs), limiting its application on optoelectronic devices. Here, we study the interfacial processes between rutile TiO 2 NR and CdSe quantum dots (QDs) using TiO 2 interlayer passivation treatments. Anatase or rutile TiO 2 thin layers were deposited on an NR surface by two wet-chemical deposition treatments. Reduced interfacial charge recombination between NRs and CdSe QDs was observed by electrochemical impedance spectroscopy with the introduction of TiO 2 thin film interlayers compared to bare TiO 2 NRs. These results can be ascribed to in-gap trap state passivation of the TiO 2 NR surface, which led to an increase in open circuit voltage. Moreover, the rutile thin layer was more efficient than anatase to promote a higher photo-excited electron transfer from CdSe QDs to TiO 2 NRs due to a large driving force for charge injection, as confirmed by surface photovoltage spectroscopy. (paper)

  20. Microscopic theory of cation exchange in CdSe nanocrystals.

    Science.gov (United States)

    Ott, Florian D; Spiegel, Leo L; Norris, David J; Erwin, Steven C

    2014-10-10

    Although poorly understood, cation-exchange reactions are increasingly used to dope or transform colloidal semiconductor nanocrystals (quantum dots). We use density-functional theory and kinetic Monte Carlo simulations to develop a microscopic theory that explains structural, optical, and electronic changes observed experimentally in Ag-cation-exchanged CdSe nanocrystals. We find that Coulomb interactions, both between ionized impurities and with the polarized nanocrystal surface, play a key role in cation exchange. Our theory also resolves several experimental puzzles related to photoluminescence and electrical behavior in CdSe nanocrystals doped with Ag.

  1. Thermogravimetric analysis of fuel film evaporation

    Institute of Scientific and Technical Information of China (English)

    HU Zongjie; LI Liguang; YU Shui

    2006-01-01

    Thermogravimetric analysis (TGA) was compared with the petrochemical distillation measurement method to better understand the characteristics of fuel film evaporation at different wall tem- peratures. The film evaporation characteristics of 90# gasoline, 93# gasoline and 0# diesel with different initial thicknesses were investigated at different environmental fluxes and heating rates. The influences of heating rate, film thickness and environmental flux on fuel film evaporation for these fuels were found. The results showed that the environmental conditions in TGA were similar to those for fuel films in the internal combustion engines, so data from TGA were suitable for the analysis of fuel film evaporation. TGA could simulate the key influencing factors for fuel film evaporation and could investigate the basic quantificational effect of heating rate and film thickness. To get a rapid and sufficient fuel film evaporation, sufficiently high wall temperature is necessary. Evaporation time decreases at a high heating rate and thin film thickness, and intense gas flow is important to promoting fuel film evaporation. Data from TGA at a heating rate of 100℃/min are fit to analyze the diesel film evaporation during cold-start and warming-up. Due to the tense molecular interactions, the evaporation sequence could not be strictly divided according to the boiling points of each component for multicomponent dissolved mixture during the quick evaporation process, and the heavier components could vaporize before reaching their boiling points. The 0# diesel film would fully evaporate when the wall temperature is beyond 250℃.

  2. Preparation and optical and electrical evaluation of bulk SiO2 sonogel hybrid composites and vacuum thermal evaporated thin films prepared from molecular materials derived from (Fe, Co) metallic phthalocyanines and 1,8 dihydroxiantraquinone compounds

    International Nuclear Information System (INIS)

    Sanchez Vergara, Maria Elena; Morales-Saavedra, Omar G.; Ontiveros-Barrera, Fernando G.; Torres-Zuniga, Vicente; Ortega-Martinez, Roberto; Ortiz Rebollo, Armando

    2009-01-01

    Semiconducting molecular material of PcFe(CN)L1 and PcCo(CN)L1 (L1 = 1,8 dihydroxianthraquinone), PcFe(CN)L2 and PcCo(CN)L2 (L2 = double potassium salt of 1,8 dihydroxianthraquinone) have been successfully used to prepare thin film and bulk sol-gel hybrid optical materials. These samples were developed according to the vacuum thermal evaporation technique and the catalyst-free sonogel route, respectively. Thin films samples were deposited on Corning glass substrates and crystalline silicon wafers and were characterized by infrared (FTIR), Raman and ultraviolet-visible (UV-vis) spectroscopies. IR-spectroscopy and Raman studies unambiguously confirmed that the molecular material thin films exhibit the same intra-molecular bonds, which suggests that the thermal evaporation process does not alter these bonds significantly. These results show that it is possible to deposit molecular materials of PcFe(CN)L2 and PcCo(CN)L2 on Corning glass substrates and silicon wafers. From the UV-vis studies the optical band gap (E g ) was evaluated. The effect of temperature on conductivity was also evaluated in these samples. Finally, the studied molecular systems dissolved at different concentrations in tetrahydrofuran (THF) were successfully embedded into a highly pure SiO 2 sonogel network generated via sonochemical reactions to form several solid state, optically active sol-gel hybrid glasses. By this method, homogeneous and stable hybrid monoliths suitable for optical characterization can be produced. The linear optical properties of these amorphous bulk structures were determined by the Brewster angle method and by absorption-, Raman- and photoluminescent (PL)-spectroscopies, respectively

  3. Preparation and optical and electrical evaluation of bulk SiO{sub 2} sonogel hybrid composites and vacuum thermal evaporated thin films prepared from molecular materials derived from (Fe, Co) metallic phthalocyanines and 1,8 dihydroxiantraquinone compounds

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez Vergara, Maria Elena [Coordinacion de Ingenieria Mecatronica, Facultad de Ingenieria, Universidad Anahuac Mexico Norte. Avenida Universidad Anahuac 46, Col. Lomas Anahuac, 52786 Huixquilucan, Estado de Mexico (Mexico); Morales-Saavedra, Omar G. [Universidad Nacional Autonoma de Mexico, Centro de Ciencias Aplicadas y Desarrollo Tecnologico, CCADET-UNAM, A.P. 70-186, Coyoacan, 04510 Mexico, D.F. (Mexico)], E-mail: omar.morales@ccadet.unam.mx; Ontiveros-Barrera, Fernando G.; Torres-Zuniga, Vicente; Ortega-Martinez, Roberto [Universidad Nacional Autonoma de Mexico, Centro de Ciencias Aplicadas y Desarrollo Tecnologico, CCADET-UNAM, A.P. 70-186, Coyoacan, 04510 Mexico, D.F. (Mexico); Ortiz Rebollo, Armando [Universidad Nacional Autonoma de Mexico, Instituto de Investigaciones en Materiales, IIM-UNAM, A.P. 70-360, Coyoacan, 04510 Mexico, D.F. (Mexico)

    2009-02-25

    Semiconducting molecular material of PcFe(CN)L1 and PcCo(CN)L1 (L1 = 1,8 dihydroxianthraquinone), PcFe(CN)L2 and PcCo(CN)L2 (L2 = double potassium salt of 1,8 dihydroxianthraquinone) have been successfully used to prepare thin film and bulk sol-gel hybrid optical materials. These samples were developed according to the vacuum thermal evaporation technique and the catalyst-free sonogel route, respectively. Thin films samples were deposited on Corning glass substrates and crystalline silicon wafers and were characterized by infrared (FTIR), Raman and ultraviolet-visible (UV-vis) spectroscopies. IR-spectroscopy and Raman studies unambiguously confirmed that the molecular material thin films exhibit the same intra-molecular bonds, which suggests that the thermal evaporation process does not alter these bonds significantly. These results show that it is possible to deposit molecular materials of PcFe(CN)L2 and PcCo(CN)L2 on Corning glass substrates and silicon wafers. From the UV-vis studies the optical band gap (E{sub g}) was evaluated. The effect of temperature on conductivity was also evaluated in these samples. Finally, the studied molecular systems dissolved at different concentrations in tetrahydrofuran (THF) were successfully embedded into a highly pure SiO{sub 2} sonogel network generated via sonochemical reactions to form several solid state, optically active sol-gel hybrid glasses. By this method, homogeneous and stable hybrid monoliths suitable for optical characterization can be produced. The linear optical properties of these amorphous bulk structures were determined by the Brewster angle method and by absorption-, Raman- and photoluminescent (PL)-spectroscopies, respectively.

  4. Electron-gun Evaporation of Cu and In thin films as Precursors for CuInSe{sub 2} Formation; Evaporacion mediante Canon de Electrones de Laminas Delgadas de Cu e In como Precursores para la Obtencion de CuInSe{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Caballero, R; Guillen, C

    2001-07-01

    In the present investigation CuInSe{sub 2} is obtained in two stages: sequential evaporation of Cu and In using an electron gun evaporator on substrates up to 30 x 30 cm''2, and a posterior selenization of the deposited films. The study is mainly focused on the first stage, in where the control of the different evaporation parameters of the metal precursors is essential. Electrical measurements are carried out, and also the topography and the thickness are determined with the object of studying the properties and homogeneity of the thin films. (Author) 19 refs.

  5. Electron-gun Evaporation of Cu and In thin films as Precursors for CuInSe{sub 2} Formation; Evaporacion mediante Canon de Electrones de Laminas Delgadas de Cu e In como Precursores para la Obtencion de CuInSe{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Caballero, R.; Guillen, C.

    2001-07-01

    In the present investigation CuInSe{sub 2} is obtained in two stages: sequential evaporation of Cu and In using an electron gun evaporator on substrates up to 30 x 30 cm''2, and a posterior selenization of the deposited films. The study is mainly focused on the first stage, in where the control of the different evaporation parameters of the metal precursors is essential. Electrical measurements are carried out, and also the topography and the thickness are determined with the object of studying the properties and homogeneity of the thin films. (Author) 19 refs.

  6. Synthesis, structure and optical properties of thin films form GeS2-In2S3 system deposited by thermal co-evaporation

    Czech Academy of Sciences Publication Activity Database

    Todorov, R.; Petkov, K.; Kincl, Miloslav; Černošková, E.; Vlček, Milan; Tichý, Ladislav

    2014-01-01

    Roč. 558, 2 May (2014), s. 298-305 ISSN 0040-6090 Institutional support: RVO:61389013 Keywords : chalcogenide glasses * thin films * optical properties Subject RIV: CA - Inorganic Chemistry Impact factor: 1.759, year: 2014

  7. Effect of angle of deposition on micro-roughness parameters and optical properties of HfO{sub 2} thin films deposited by reactive electron beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Tokas, R.B., E-mail: tokasstar@gmail.com; Jena, S.; Thakur, S.; Sahoo, N.K.

    2016-06-30

    Oblique angle deposited oxide thin films, in which refractive index profiles can be tailored across depth by tuning their microstructure using varying angle of deposition, have opened up new dimensions in fabrication of optical interference devices. Since surface morphology plays an important role for the qualification of these thin film devices for optical or other applications, it is important to investigate morphological properties of obliquely deposited thin films. In the present work, a set of HfO{sub 2} thin films have been deposited at several oblique angles. Morphological parameters of such thin films viz., correlation length, intrinsic roughness, fractal spectral strength, etc., have been determined through suitable modelling of extended power spectral density measured by atomic force microscopy. It has been found that intrinsic roughness and fractal spectral strength show an interesting behaviour with deposition angle and the same has been discussed in the light of atomic shadowing and re-emission and diffusion of ad-atoms. Further refractive index and thickness of such thin films have been estimated from optical transmission spectra through suitable modelling. Refractive index of such thin film varies from 1.93 to 1.37 as the deposition angle varies from normal to glancing angle (80°). Further, refractive index and grain size depict an opposite trend with deposition angle. This variation has been explained in terms of varying film porosity and column slanting with angle of deposition. - Highlights: • HfO{sub 2} thin films deposited at several oblique angles • Film deposited at 80° exhibits the highest grain size and intrinsic roughness (σ). • Fractal strength and σ depict an interesting trend with angle of deposition. • Refractive index and grain size depict an opposite trend with angle of deposition.

  8. Synthesis, characterization, and photoactivity of InTaO4 and In0.9Ni0.1TaO4 thin films prepared by electron evaporation

    International Nuclear Information System (INIS)

    Rico, V. J.; Frutos, F.; Yubero, F.; Espinos, J. P.; Gonzales-Elipe, A. R.

    2010-01-01

    InTaO 4 and In 0.9 Ni 0.1 TaO 4 thin films have been prepared by electron evaporation of successive layers of the single oxide components and posterior annealing at T>800 deg. C. The annealed thin films presented the monoclinic crystallographic structure typical of these mixed oxides. The electrical and optical behaviors of the films, assessed by C-V measurements, surface conductivity as a function of temperature, and UV-vis absorption spectroscopy, indicate that these oxides are wide band gap semiconductors with a variable dielectric constant depending on the annealing conditions. By reflection electron energy loss spectroscopy some electronic states have been found in the gap at an energy that is compatible with the activation energy deduced from the conductivity versus 1/T plots for these oxides. The photoactivity of these materials has been assessed by looking to the evolution of the wetting contact angle as a function of the irradiation time. All the films became superhydrophilic when irradiated with UV light, while the In 0.9 Ni 0.1 TaO 4 thin films also presented a small partial decrease in wetting angle when irradiated with visible photons.

  9. Synthesis and characterization of CdSe quantum dots dispersed in PVA matrix by chemical route

    Energy Technology Data Exchange (ETDEWEB)

    Khan, Zubair M. S. H.; Ganaie, Mohsin; Husain, M.; Zulfequar, M., E-mail: mzulfe@rediffmail.com [Department of Physics, Jamia Millia Islamia, New Delhi-110025 (India); Khan, Shamshad A. [Department of Physics St. Andrews College, Gorakhpur-273001,U.P,-India (India)

    2016-05-23

    CdSe quantum dots using polyvinyl alcohol as a capping agent have been synthesized via a simple heat induced thermolysis technique. The structural analysis of CdSe/PVA thin film was studied by X-ray diffraction, which confirms crystalline nature of the prepared film. The surface morphology and particle size of the prepared sample was studied by Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). The SEM studies of CdSe/PVA thin film shows the average size of particles in the form of clusters of several quantum dots in the range of 10-20 nm. The morphology of CdSe/PVA thin film was further examined by TEM. The TEM image shows the fringes of tiny dots with average sizes of 4-7 nm. The optical properties of CdSe/PVA thin film were studied by UV-VIS absorption spectroscopy. The CdSe/PVA quantum dots follow the role of direct transition and the optical band gap is found to be 4.03 eV. From dc conductivity measurement, the observed value of activation energy was found to be 0.71 eV.

  10. Controlling water evaporation through self-assembly.

    Science.gov (United States)

    Roger, Kevin; Liebi, Marianne; Heimdal, Jimmy; Pham, Quoc Dat; Sparr, Emma

    2016-09-13

    Water evaporation concerns all land-living organisms, as ambient air is dryer than their corresponding equilibrium humidity. Contrarily to plants, mammals are covered with a skin that not only hinders evaporation but also maintains its rate at a nearly constant value, independently of air humidity. Here, we show that simple amphiphiles/water systems reproduce this behavior, which suggests a common underlying mechanism originating from responding self-assembly structures. The composition and structure gradients arising from the evaporation process were characterized using optical microscopy, infrared microscopy, and small-angle X-ray scattering. We observed a thin and dry outer phase that responds to changes in air humidity by increasing its thickness as the air becomes dryer, which decreases its permeability to water, thus counterbalancing the increase in the evaporation driving force. This thin and dry outer phase therefore shields the systems from humidity variations. Such a feedback loop achieves a homeostatic regulation of water evaporation.

  11. Charge separation and transfer in hybrid type II tunneling structures of CdTe and CdSe nanocrystals

    International Nuclear Information System (INIS)

    Gross, Dieter Konrad Michael

    2013-01-01

    Closely packed nanocrystal systems have been investigated in this thesis with respect to charge separation by charge carrier tunneling. Clustered and layered samples have been analyzed using PL-measurements and SPV-methods. The most important findings are reviewed in the following. A short outlook is also provided for potential further aspects and application of the presented results. The main purpose of this thesis was to find and quantify electronic tunneling transfer in closely packed self-assembled nanocrystal structures presenting quantum mechanical barriers of about 1 nm width. We successfully used hybrid assemblies of CdTe and CdSe nanocrystals where the expected type II alignment between CdTe and CdSe typically leads to a concentration of electrons in CdSe and holes in CdTe nanocrystals. We were able to prove the charge selectivity of the CdTe-CdSe nanocrystal interface which induces charge separation. We mainly investigated the effects related to the electron transfer from CdTe to CdSe nanocrystals. Closely packing was achieved by two independent methods: the disordered colloidal clustering in solution and the layered assembly on dry glass substrates. Both methods lead to an inter-particle distance of about 1 nm of mainly organic material which acts as a tunneling barrier. PL-spectroscopy was applied. The PL-quenching of the CdTe nanocrystals in hybrid assemblies indicates charge separation by electron transfer from CdTe to CdSe nanocrystals. A maximum quenching rate of up to 1/100 ps was measured leading to a significant global PL-quenching of up to about 70 % for the CdTe nanocrystals. It was shown that charge separation dynamics compete with energy transfer dynamics and that charge separation typically dominates. The quantum confinement effect was used to tune the energetic offset between the CdTe and CdSe nanocrystals. We thus observe a correlation of PL-quenching and offset of the energy states for the electron transfer. The investigated PL

  12. Charge separation and transfer in hybrid type II tunneling structures of CdTe and CdSe nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Gross, Dieter Konrad Michael

    2013-11-08

    Closely packed nanocrystal systems have been investigated in this thesis with respect to charge separation by charge carrier tunneling. Clustered and layered samples have been analyzed using PL-measurements and SPV-methods. The most important findings are reviewed in the following. A short outlook is also provided for potential further aspects and application of the presented results. The main purpose of this thesis was to find and quantify electronic tunneling transfer in closely packed self-assembled nanocrystal structures presenting quantum mechanical barriers of about 1 nm width. We successfully used hybrid assemblies of CdTe and CdSe nanocrystals where the expected type II alignment between CdTe and CdSe typically leads to a concentration of electrons in CdSe and holes in CdTe nanocrystals. We were able to prove the charge selectivity of the CdTe-CdSe nanocrystal interface which induces charge separation. We mainly investigated the effects related to the electron transfer from CdTe to CdSe nanocrystals. Closely packing was achieved by two independent methods: the disordered colloidal clustering in solution and the layered assembly on dry glass substrates. Both methods lead to an inter-particle distance of about 1 nm of mainly organic material which acts as a tunneling barrier. PL-spectroscopy was applied. The PL-quenching of the CdTe nanocrystals in hybrid assemblies indicates charge separation by electron transfer from CdTe to CdSe nanocrystals. A maximum quenching rate of up to 1/100 ps was measured leading to a significant global PL-quenching of up to about 70 % for the CdTe nanocrystals. It was shown that charge separation dynamics compete with energy transfer dynamics and that charge separation typically dominates. The quantum confinement effect was used to tune the energetic offset between the CdTe and CdSe nanocrystals. We thus observe a correlation of PL-quenching and offset of the energy states for the electron transfer. The investigated PL

  13. Differential in-depth characterization of co-evaporated Cu(In,Ga)Se{sub 2} thin films for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Klinkert, Torben; Jubault, Marie; Donsanti, Frédérique; Lincot, Daniel; Guillemoles, Jean-François

    2014-05-02

    In this paper we report an alternative approach to perform in-depth characterisation of Cu(In,Ga)Se{sub 2} (CIGS) absorber layers. While usually groups stop their co-evaporation process at different points and analyse the precursor or intermediate phases, we perform in-depth analysis on the finished absorber layer as it will be used in the solar cell. A co-evaporated CIGS layer was cut to several samples, which then were chemically etched to different thicknesses. Compared to sputtering ablation techniques, this avoids the selective abrasion of atoms with different binding energies. The samples were analysed by Raman spectroscopy and X-ray diffraction. In-depth information is obtained by differentiating the signals of samples with different thicknesses after etching and a first order correction for absorption losses was executed. The Ga/(Ga + In) ratio extracted from X-ray diffraction measurements is in good agreement with the double gradient observed by glow discharge optical emission spectroscopy. A slight variation might indicate residual stress in the CIGS layer. A preferred (112) orientation across the whole film together with changing (220), (116) and (312) orientation preferences is reported and explained on the basis of the CIGS crystal structure. Raman signals attributed to ordered vacancy compounds are found throughout the whole sample thickness and not only close to the surface, as often reported in the literature. - Highlights: • Co-evaporated CIGS with double Ga gradient was chemically etched to different thicknesses. • X-ray diffractograms were differentiated to gain in-depth information. • (116)-oriented grains are found to tend to grow on (312)-oriented grains. • Change of preferred orientation was linked to crystal structure at grain boundaries. • Ga gradient from Vegard's law of XRD peaks is in agreement with GDOES measurement.

  14. Photoinduced interaction of CdSe quantum dot with coumarins

    Energy Technology Data Exchange (ETDEWEB)

    El-Kemary, Maged, E-mail: elkemary@sci.kfs.edu.eg [Nanotechnology Center, Faculty of Science, Kafrelsheikh University, 33516 Kafrelsheikh (Egypt); Gaber, Mohamed; El-Sayed, Y.S. [Chemistry Department, Faculty of Science, University of Tanta, Tanta (Egypt); Gheat, Youssef [Nanotechnology Center, Faculty of Science, Kafrelsheikh University, 33516 Kafrelsheikh (Egypt); Chemistry Department, Faculty of Science, University of Tanta, Tanta (Egypt)

    2015-03-15

    Cadmium selenide (CdSe) quantum dots (QDs) were synthesized with a cubic shape having a diameter of ∼5.24 nm. The prepared CdSe QDs were characterized by using UV–visible, Fourier transform infrared (FTIR), powder X-ray diffraction (XRD) and transmission electron microscope (TEM) measurements. The UV–visible absorption spectra indicate that the optical band gap of CdSe QDs is ∼622 nm and the peak shift can mainly be due to the quantum size effects. The fluorescence decay kinetics for the synthesized QDs was followed by time-resolved fluorescence spectroscopy, and the spectra were analyzed in regard to a bi-exponential model to identify two lifetime values, that is, shorter-lifetime 1.37 ns (55%) and longer-lifetime 6.58 ns (45%). The interaction of coumarin 152 (C152) and coumarin 153 (C153) with QDs surface brings about further considerable changes in the absorption and fluorescence patterns. The calculated binding constant from fluorescence quenching method matches well with that determined from the absorption spectral changes. The static quenching mechanism was confirmed by large magnitude of K{sub SV} and unaltered fluorescence lifetime. - Highlights: • CdSe QDs were synthesized with a cubic shape having a diameter of ∼5.24 nm. • The UV–visible absorption spectra indicate that the optical band gap of CdSe QDs is ∼622 nm. • Picosecond fluorescence measurements of the QDs suggest bi-exponential function. • The calculated binding constant from fluorescence quenching method matches well with that determined from the absorption spectral changes. • The static quenching mechanism was confirmed by large magnitude of K{sub SV} and unaltered fluorescence lifetime.

  15. Streamer Evaporation

    Science.gov (United States)

    Suess, Steven T.; Wang, A. H.; Wu, Shi T.; Nerney, S.

    1998-01-01

    Evaporation is the consequence of slow plasma heating near the tops of streamers where the plasma is only weakly contained by the magnetic field. The form it takes is the slow opening of field lines at the top of the streamer and transient formation of new solar wind. It was discovered in polytropic model calculations, where due to the absence of other energy loss mechanisms in magnetostatic streamers, its ultimate endpoint is the complete evaporation of the streamer. This takes, for plausible heating rates, weeks to months in these models. Of course streamers do not behave this way, for more than one reason. One is that there are losses due to thermal conduction to the base of the streamer and radiation from the transition region. Another is that streamer heating must have a characteristic time constant and depend on the ambient physical conditions. We use our global Magnetohydrodynamics (MHD) model with thermal conduction to examine a few examples of the effect of changing the heating scale height and of making ad hoc choices for how the heating depends on ambient conditions. At the same time, we apply and extend the analytic model of streamers, which showed that streamers will be unable to contain plasma for temperatures near the cusp greater than about 2xl0(exp 6) K. Slow solar wind is observed to come from streamers through transient releases. A scenario for this that is consistent with the above physical process is that heating increases the near-cusp temperature until field lines there are forced open. The subsequent evacuation of the flux tubes by the newly forming slow wind decreases the temperature and heating until the flux tubes are able to reclose. Then, over a longer time scale, heating begins to again refill the flux tubes with plasma and increase the temperature until the cycle repeats itself. The calculations we report here are first steps towards quantitative evaluation of this scenario.

  16. Timely resolved measurements on CdSe nanoparticles; Zeitaufgeloeste Messungen an CdSe Nanopartikeln

    Energy Technology Data Exchange (ETDEWEB)

    Holt, B.E. von

    2006-06-06

    By means of infrared spectroscopy the influence of the organic cover on structure and dynamics of CdSe nanoparticles was studied. First a procedure was developed, which allows to get from the static infrared spectrum informations on the quality of the organic cover and the binding behaviour of the ligands. On qualitatively high-grade and well characterized samples thereafter the dynamics of the lowest-energy electron level 1S{sub e} was time-resolvedly meausred in thew visible range. As reference served CdSe TOPO, which was supplemented by samples with the ligands octanthiole, octanic acid, octylamine, naphthoquinone, benzoquinone, and pyridine. The studied nanoparticles had a diameter of 4.86 nm. By means of the excitation-scanning or pump=probe procedure first measurements in the picosecond range were performed. The excitation wavelengths were thereby spectrally confined and so chosen that selectively the transitions 1S{sub 3/2}-1S-e and 1P{sub 3/2}-1P{sub e} but not the intermediately lyingt transition 2S{sub 3/2}-1S{sub e} were excited. The excitation energies were kept so low that the excitation of several excitons in one crystal could be avoided. The scanning wavelength in the infrared corresponded to the energy difference between the electron levels 1S{sub e} and 1P{sub e}. The transients in the picosecond range are marked by a steep increasement of the signal, on which a multi-exponential decay follows. The increasement, which reproduces the popiulation of the excited state, isa inependent on the choice of the ligands. The influence of the organic cover is first visible in the different decay times of the excited electron levels. the decay of the measurement signal of CdSe TOPO can be approximatively described by three time constants: a decay constant in the early picosecond region, a time constant around hundert picoseconds, and a time constant of some nanoseconds. At increasing scanning wavelength the decay constants become longer. By directed excitation

  17. Photoluminescence of polycrystalline CuIn 0.5 Ga 0.5 Te 2 thin films grown by flash evaporation

    KAUST Repository

    Yandjah, L.

    2018-04-03

    Polycrystalline CuIn0.5Ga0.5Te2 films were deposited by flash evaporation from ingot prepared by reacting, in stoichiometric proportions, high purity Cu, In, Ga and Te elements in vacuum sealed quartz . The as-obtained films were characterized by X – ray diffraction (XRD), transmission electron microscopy (TEM) combined with energy dispersive spectroscopy (EDS). XRD and TEM results showed that the layer has a chalcopyrite-type structure, predominantly oriented along (112) planes, with lattice parameters a = 0.61 nm and c = 1.22 nm. The optical properties in the near - infrared and visible range 600 - 2400 nm have been studied. The analysis of absorption coefficient yielded an energy gap value of 1.27 eV. Photoluminescence analysis of as-grown sample shows two main emission peaks located at 0.87 and 1.19 eV at 4 K.

  18. Preparation and microstructural characterization of TiC and Ti0.6W0.4/TiC0.6 composite thin films obtained by activated reactive evaporation

    International Nuclear Information System (INIS)

    Montes de Oca, J. A.; LePetitcorps, Y.; Manaud, J.-P.; Vargas Garcia, J. R.

    2008-01-01

    Titanium carbide-based coatings were deposited on W substrates at a high coating growth rate by activated reactive evaporation at 500 and 600 deg. C in a L560 Leybold system using propene as reactive atmosphere. The crystal structure, lattice parameter, preferred orientation, and grain size of the coatings were determined by x-ray diffraction technique using Cu Kα. The analysis of the coating morphology was performed by scanning electron microscopy (SEM), and the composition of the films was analyzed by Auger electron spectroscopy and electron-probe microanalysis. Experimental results suggested that temperature was one of the most important parameters in the fabrication of stoichiometric TiC coatings. Thus, TiC coatings were obtained at 600 deg. C, whereas TiC 0.6 nonstoichiometric coatings codeposited with a free Ti phase were obtained at 500 deg. C, giving rise to the formation of a composite thin film. After annealing at 1000 deg. C, the stoichiometric films remained stable, but a crack pattern was formed over the entire coating surface. In addition, Ti 0.6 W 0.4 /TiC 0.6 composite thin coatings were obtained for the films synthesized at 500 deg. C. The formation of a Ti 0.6 W 0.4 ductile phase in the presence of a TiC 0.6 phase was responsible to avoid the coating cracking

  19. Elevated Temperature Photophysical Properties and Morphological Stability of CdSe and CdSe/CdS Nanoplatelets

    Energy Technology Data Exchange (ETDEWEB)

    Rowland, Clare E. [Department; Center; Fedin, Igor [Department; Diroll, Benjamin T. [Center; Liu, Yuzi [Center; Talapin, Dmitri V. [Center; Department; Schaller, Richard D. [Department; Center

    2018-01-03

    Elevated temperature optoelectronic performance of semiconductor nanomaterials remains an important issue for applications. Here we examine two-dimensional CdSe nanoplatelets (NPs) and CdS/CdSe/CdS shell/core/shell sandwich NPs at temperatures ranging from 300-700 K using static and transient spectroscopies as well as in-situ transmission electron microscopy. NPs exhibit reversible changes in PL intensity, spectral position, and emission linewidth with temperature elevation up to ~500 K, losing a factor of ~8 to 10 in PL intensity at 400 K relative to ambient. Temperature elevation above ~500 K yields thickness dependent, irreversible degradation in optical properties. Electron microscopy relates stability of the NP morphology up to near 600 K followed by sintering and evaporation at still higher temperatures. The mechanism of reversible PL loss, based on differences in decay dynamics between time-resolved photoluminescence and transient absorption, arise primarily from hole trapping in both NPs and sandwich NPs.

  20. Influence of composition on optical and dispersion parameters of thermally evaporated non-crystalline Cd{sub 50}S{sub 50−x}Se{sub x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hassanien, A.S., E-mail: a.s.hassanien@gmail.com [Engineering Mathematics and Physics Dept., Faculty of Engineering (Shoubra), Benha University (Egypt); Physics Department, Faculty of Science and Humanities in Ad-Dawadmi, Shaqra University, 11911 (Saudi Arabia); Akl, Alaa A. [Physics Department, Faculty of Science and Humanities in Ad-Dawadmi, Shaqra University, 11911 (Saudi Arabia)

    2015-11-05

    Non-crystalline thin films of chalcogenide Cd{sub 50}S{sub 50−x}Se{sub x} system (30 ≤ x ≤ 50) were obtained by thermal evaporation technique onto a pre-cleaned glass substrate at a vacuum of 8.2 × 10{sup −4} Pa. The deposition rate and film thickness were kept constant at about 8 nm/s and 200 nm, respectively. Amorphous/crystalline nature and chemical composition of films have been checked using X-ray diffraction and energy dispersive X-ray spectroscopy (EDX). Optical properties of thin films were investigated and studied using the corrected transmittance, T(λ) and corrected reflectance, R(λ) measurements. Obtained data reveal that, the indirect optical energy gap (E{sub g}) was decreased from 2.21 to 1.57 eV. On the contrary, Urbach energy (band tail width), E{sub U} was found to be increased from 0.29 to 0.45 eV. This behavior is believed to be associated with the increase of Se-content instead of S-content in the thin films of Cd{sub 50}S{sub 50−x}Se{sub x} system. Chemical bond approach model, CBA was used to analyze the obtained values of E{sub g} and E{sub U}. Optical density, skin depth, extinction coefficient, refractive index and optical conductivity of chalcogenide CdSSe thin films were discussed as functions of Se-content. Using Wemple-DiDomenico single oscillator model, the refractive index dispersion and energy parameters and their dependence on Se content were studied. - Highlights: • Amorphous thin films of thickness 200 nm of Cd{sub 50}S{sub 50−x}Se{sub x} (30 ≤ x ≤ 50) have prepared. • Optical properties, indirect optical energy gap and band tail width were studied. • Chemical bond approach, CBA was used to analyze the obtained values of E{sub g} and E{sub U}. • New data of dispersion refractive index parameters were investigated and discussed.

  1. Studies on dielectric properties, opto-electrical parameters and electronic polarizability of thermally evaporated amorphous Cd{sub 50}S{sub 50−x}Se{sub x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hassanien, Ahmed Saeed, E-mail: a.s.hassanien@gmail.com [Engineering Mathematics and Physics Department, Faculty of Engineering (Shoubra), Benha University (Egypt); Physics Department, Faculty of Science and Humanities in Ad-Dawadmi, Shaqra University, 11911 (Saudi Arabia)

    2016-06-25

    The objective of this work is to study the influence of the addition of more Se on dielectric properties, opto-electrical parameters and electronic polarizability of amorphous chalcogenide Cd{sub 50}S{sub 50−x}Se{sub x} thin films (30 ≤ x ≤ 50 at%). Thin films of thickness 200 nm were synthesized by vacuum deposition at ≈8.2 × 10{sup −4} Pa. Both refractive index and extinction coefficient were used to obtain all the studied parameters. The high frequency dielectric constant, real and imaginary parts of dielectric constant were discussed. Drude theory was applied to investigate opto-electrical parameters, like optical carrier concentration, optical mobility and optical resistivity. Moreover, other parameters were investigated and studied, e.g. Drude parameters, volume and surface energy loss functions, dielectric loss factor, dielectric relaxation time, complex optical conductivity and electronic polarizability as well as optical electronegativity and third-order nonlinear optical susceptibility. Values of electronic polarizability and nonlinear optical susceptibility were found to be decreased while optical electronegativity increased as Se-content was increased. Increment of Se-content in amorphous Cd{sub 50}S{sub 50−x}Se{sub x} thin films has also led to minimize the energy losses when electromagnetic waves propagate through films as well as optical conductivity and the speed of light increased. The other studied properties and parameters of Cd{sub 50}S{sub 50−x}Se{sub x} films were found to be strongly dependent upon Se-content. - Highlights: • Thermally evaporated amorphous Cd{sub 50}S{sub 50−x}Se{sub x} (30 ≤ x ≤ 50) thin films were deposited. • Refractive index and absorption index were used to determine almost all properties. • Dielectric properties, Drude parameters and electronic polarizability were studied. • Addition of more Se to CdSSe matrix led to improve the opto-electrical properties. • New data were obtained and

  2. Characterization of CdSe polycrystalline films by photoluminescence spectroscopy

    International Nuclear Information System (INIS)

    Brasil, M.J.S.P.

    1985-01-01

    The characterization of CdSe polycristalline films were done by photoluminescence spectroscopy, X-ray diffraction analysis, diagrams IxV, and efficiency of solar energy conversion for cells done by these films. The experimental data shown strong temperature dependence of annealing, and the optimum temperature around 650 0 C was determined. The films did not present photoluminescence before heat treatment, but the annealed sample spectrum showed fine structures in the excitonic region, crystal phase transformation, enhancement of grain size, and better efficiency of the cell. Measurements of photoluminescence between 2 and 300 K, showed two bands of infrared emission, width and intense enough. The shape, at half-width, and the integrated intensity of one these bands were described by a configuration coordinate model for deep centers. Based on obtained results, some hypothesis about the origin of these bands and its correlation with efficiency of cells done with CdSe polycrystalline films, are proposed. (M.C.K.) [pt

  3. Structural and optical properties of electron beam evaporated CdSe ...

    Indian Academy of Sciences (India)

    electronic applications such as photo detection or solar energy conversion, due to its optical and electrical properties, as well as its good chemical and mechanical stability. In order to explore the possibility of using this in optoelectronics, ...

  4. Structure and properties of ZnSxSe1-x thin films deposited by thermal evaporation of ZnS and ZnSe powder mixtures

    Science.gov (United States)

    Valeev, R. G.; Romanov, E. A.; Vorobiev, V. L.; Mukhgalin, V. V.; Kriventsov, V. V.; Chukavin, A. I.; Robouch, B. V.

    2015-02-01

    Interest to ZnSxSe1-x alloys is due to their band-gap tunability varying S and Se content. Films of ZnSxSe1-x were grown evaporating ZnS and ZnSe powder mixtures onto SiO2, NaCl, Si and ITO substrates using an original low-cost method. X-ray diffraction patterns and Raman spectroscopy, show that the lattice structure of these films is cubic ZnSe-like, as S atoms replace Se and film compositions have their initial S/Se ratio. Optical absorption spectra show that band gap values increase from 2.25 to 3 eV as x increases, in agreement with the literature. Because S atomic radii are smaller than Se, EXAFS spectra confirm that bond distances and Se coordination numbers decrease as the Se content decreases. The strong deviation from linearity of ZnSe coordination numbers in the ZnSxSe1-x indicate that within this ordered crystal structure strong site occupation preferences occur in the distribution of Se and S ions. The behavior is quantitatively confirmed by the strong deviation from the random Bernoulli distribution of the three sight occupation preference coefficients of the strained tetrahedron model. Actually, the ternary ZnSxSe1-x system is a bi-binary (ZnS+ZnSe) alloy with evanescent formation of ternary configurations throughout the x-range.

  5. Quarternair CuGaSeTe and CuGa0.5In 0.5Te2 Thin Films Fabrication Using Flash Evaporation

    Directory of Open Access Journals (Sweden)

    A Harsono Soepardjo

    2010-10-01

    Full Text Available Quarternair materials CuGaSeTe and CuGa0.5In 0.5Te2 are the basic materials to solar cell fabrication. These materials have high absorption coefficients around 103 - 105 cm-1 and band gap energy in the range of 1-5 eV. In this research, the films were made by flash evaporation method using quarternair powder materials of CuGaSeTe and CuGa0.5In 0.5Te2 to adhere in a glass substrate. After the films were obtained, the properties of these films will be characterized optically and electrically. The lattice parameter of the films and the crystalline film structure were obtained using X-Ray Diffraction (XRD spectroscopy. The XRD results show that the quarternair CuGaSeTe and CuGa0.5In 0.5Te2 films have a chalcopyrite structure. The absorption coefficient and the  band gap energy of the films were calculated using transmittance and reflectance patterns that measured using UV-VIS Difractometer. The films composition can be detected by using the Energy Dispersive Spectroscopy (EDS, while the films resistivity, mobility and the majority carrier of the films were obtained from Hall Effect experiments.

  6. Mixed phase evaporation source

    International Nuclear Information System (INIS)

    1975-01-01

    Apparatus for reducing convection current heat loss in electron beam evaporator is described. A material to be evaporated (evaporant) is placed in the crucible of an electron beam evaporation source along with a porous mass formed of a powdered or finely divided solid to act as an impedance to convection currents. A feed system is employed to replenish the supply of evaporant as it is vaporized

  7. Effect of annealing temperature on the crystalline quality and phase transformation of chemically deposited CdSe films

    International Nuclear Information System (INIS)

    Zapata-Torres, M.; Chale-Lara, F.; Caballero-Briones, F.; Calzadilla, O.

    2005-01-01

    Polycrystalline CdSe thin films were grown on glass substrates by chemical bath deposition at 50 C. The samples were annealed in air atmosphere at different temperatures and characterized by X-ray diffraction and Raman spectroscopy. It was found that the as-grown films have cubic structure. These samples maintain their cubic structure for annealing temperatures between 60 C and 300 C. For annealing temperatures higher than 300 C we obtain a mixture of cubic and hexagonal phases. The analysis made by X-ray diffraction and Raman dispersion show that the samples annealed at temperatures under the phase-transition temperature increase their crystalline quality. In order to determinate the temperature for the complete transition of the cubic phase, we used the precipitated material obtained during the grown of the CdSe films. This material was annealed on air atmosphere between 300 C and 500 C with 50 intervals. The samples were measured by X-ray diffraction. The samples maintained the cubic structure if the annealing temperature is under 300 C. For temperatures between 300 C and 450 C we found a mixture of cubic and hexagonal phase. For an annealing temperature of 500 C we obtain only the hexagonal phase. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Influences of CdSe NCs on the photovoltaic parameters of BHJ organic solar cells.

    Science.gov (United States)

    Ongul, Fatih; Yuksel, Sureyya Aydin; Allahverdi, Cagdas; Bozar, Sinem; Kazici, Mehmet; Gunes, Serap

    2018-04-05

    In this study, the high quality CdSe nanocrystals (NCs) capped with stearic acid were synthesized in a solvent and then purified four times by using the precipitation and redissolution process. The average size of the synthesized CdSe NCs was determined ~3.0nm via transmission electron microscopy (TEM) measurement and their corresponding optical band edge energy was also calculated as ~2.1eV using ultraviolet-visible (UV-Vis) absorption spectroscopy. The bulk heterojunction (BHJ) hybrid solar cells based on a ternary system including P3HT, PCBM and CdSe NCs at different weight concentrations (0wt%, 0.1wt%, 0.5wt%, 1wt% and 2wt%) were fabricated by spin-casting process. The effect of the concentration of CdSe NCs on the photovoltaic parameters of these BHJ organic solar cells was investigated. The surface morphology of the photoactive layer modified by the incorporation of CdSe NCs into P3HT:PCBM matrix was observed with scanning electron microscopy (SEM). It was shown that when the concentration of CdSe NCs increases above 0.1wt% in this ternary system, the photovoltaic performance of the devices significantly decreases. The power conversion efficiency of the organic photovoltaic (OPV) device was enhanced ~20% by incorporating CdSe NCs with 0.1wt% with respect to those without CdSe NCs. Copyright © 2017 Elsevier B.V. All rights reserved.

  9. Influences of CdSe NCs on the photovoltaic parameters of BHJ organic solar cells

    Science.gov (United States)

    Ongul, Fatih; Yuksel, Sureyya Aydin; Allahverdi, Cagdas; Bozar, Sinem; Kazici, Mehmet; Gunes, Serap

    2018-04-01

    In this study, the high quality CdSe nanocrystals (NCs) capped with stearic acid were synthesized in a solvent and then purified four times by using the precipitation and redissolution process. The average size of the synthesized CdSe NCs was determined 3.0 nm via transmission electron microscopy (TEM) measurement and their corresponding optical band edge energy was also calculated as 2.1 eV using ultraviolet-visible (UV-Vis) absorption spectroscopy. The bulk heterojunction (BHJ) hybrid solar cells based on a ternary system including P3HT, PCBM and CdSe NCs at different weight concentrations (0 wt%, 0.1 wt%, 0.5 wt%, 1 wt% and 2 wt%) were fabricated by spin-casting process. The effect of the concentration of CdSe NCs on the photovoltaic parameters of these BHJ organic solar cells was investigated. The surface morphology of the photoactive layer modified by the incorporation of CdSe NCs into P3HT:PCBM matrix was observed with scanning electron microscopy (SEM). It was shown that when the concentration of CdSe NCs increases above 0.1 wt% in this ternary system, the photovoltaic performance of the devices significantly decreases. The power conversion efficiency of the organic photovoltaic (OPV) device was enhanced 20% by incorporating CdSe NCs with 0.1 wt% with respect to those without CdSe NCs.

  10. Self-Assembled Monolayers of CdSe Nanocrystals on Doped GaAs Substrates

    DEFF Research Database (Denmark)

    Marx, E.; Ginger, D.S.; Walzer, Karsten

    2002-01-01

    This letter reports the self-assembly and analysis of CdSe nanocrystal monolayers on both p- and a-doped GaAs substrates. The self-assembly was performed using a 1,6-hexanedithiol self-assembled monolayer (SAM) to link CdSe nanocrystals to GaAs substrates. Attenuated total reflection Fourier tran...

  11. Investigations on electron beam evaporated Cu(In{sub 0.85}Ga{sub 0.15})Se{sub 2} thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Venkatachalam, M.; Kannan, M.D.; Prasanna, S.; Jayakumar, S.; Balasundaraprabhu, R. [Thin Film Center, Department of Physics, PSG College of Technology, Coimbatore (India); Muthukumarasamy, N. [Department of Physics, Coimbatore Institute of Technology, Coimbatore (India); Saroja, M. [Department of Electronics, Erode Arts College, Erode (India)

    2009-09-15

    CIGS bulk with composition of CuIn{sub 0.85}Ga{sub 0.15}Se{sub 2} was synthesized by direct reaction of elemental copper, indium, gallium and selenium. CIGS thin films were then deposited onto well-cleaned glass substrates using the prepared bulk alloy by electron beam deposition method. The structural properties of the deposited films were studied using X-ray diffraction technique. The as-deposited CIGS films were found to be amorphous. On annealing, the films crystallized with a tetragonal chalcopyrite structure. An intermediate Cu-rich phase precipitated at 200 C and dissociated at higher annealing temperatures. Average grain size calculated from the XRD spectra indicated that the films had a nano-crystalline structure and was further corroborated by AFM analysis of the sample surface. The chemical constituents present in the deposited CIGS films were identified using energy dispersive X-ray analysis. CIGS based solar cells were then fabricated on molybdenum and ITO coated glass substrates and the efficiencies have been evaluated. (author)

  12. CHARACTERISTICS OF LITHIUM LANTHANUM TITANATE THIN FILMS MADE BY ELECTRON BEAM EVAPORATION FROM NANOSTRUCTURED La0.67-xLi 3xTiO3 TARGET

    Directory of Open Access Journals (Sweden)

    Nguyen Nang Dinh

    2017-11-01

    Full Text Available Bulk nanostructured perovskites of La0.67-xLi3xTiO3 (LLTO were prepared by using thermally ball-grinding from compounds of La2O3, Li2CO3 and TiO2. From XRD analysis, it was found that LTTO materials were crystallized with nano-size grains of an average size of 30 nm. The bulk ionic conductivity was found strongly dependent on the Li+ composition, the samples with x = 0.11 (corresponding to a La0.56Li0.33TiO3 compound have the best ionic conductivity, which is ca. 3.2 x 10-3 S/cm at room temperature. The LLTO amorphous films were made by electron beam deposition. At room temperature the smooth films have ionic conductivity of 3.5 x 10-5  S/cm and transmittance of 80%. The optical bandgap of the films was found to be of 2.3 eV. The results have shown that the perovskite La0.56Li0.33TiO3  thin films can be used for a transparent solid electrolyte in ionic battery and in all-solid-state electrochromic devices, in particular.

  13. Electrochemiluminescence Biosensor Based on Thioglycolic Acid-Capped CdSe QDs for Sensing Glucose

    Directory of Open Access Journals (Sweden)

    Eun-Young Jung

    2016-01-01

    Full Text Available In order to detect low level glucose concentration, an electrochemiluminescence (ECL biosensor based on TGA-capped CdSe quantum dots (QDs was fabricated by the immobilization of CdSe QDs after modifying the surface of a glassy carbon electrode (GCE with 4-aminothiophenol diazonium salts by the electrochemical method. For the detection of glucose concentration, glucose oxidase (GOD was immobilized onto the fabricated CdSe QDs-modified electrode. The fabricated ECL biosensor based on TGA-capped CdSe QDs was characterized using a scanning electron microscope (SEM, UV-vis spectrophotometry, transmission electron microscopy (TEM, a fluorescence spectrometer (PL, and cyclic voltammetry (CV. The fabricated ECL biosensor based on TGA-capped CdSe QDs is suitable for the detection of glucose concentrations in real human blood samples.

  14. Carrier transport dynamics in Mn-doped CdSe quantum dot sensitized solar cells

    Science.gov (United States)

    Poudyal, Uma; Maloney, Francis S.; Sapkota, Keshab; Wang, Wenyong

    2017-10-01

    In this work quantum dot sensitized solar cells (QDSSCs) were fabricated with CdSe and Mn-doped CdSe quantum dots (QDs) using the SILAR method. QDSSCs based on Mn-doped CdSe QDs exhibited improved incident photon-to-electron conversion efficiency. Carrier transport dynamics in the QDSSCs were studied using the intensity modulated photocurrent/photovoltage spectroscopy technique, from which transport and recombination time constants could be derived. Compared to CdSe QDSSCs, Mn-CdSe QDSSCs exhibited shorter transport time constant, longer recombination time constant, longer diffusion length, and higher charge collection efficiency. These observations suggested that Mn doping in CdSe QDs could benefit the performance of solar cells based on such nanostructures.

  15. 'Green' synthesis of starch capped CdSe nanoparticles at room temperature

    International Nuclear Information System (INIS)

    Li Jinhua; Ren Cuiling; Liu Xiaoyan; Hu Zhide; Xue Desheng

    2007-01-01

    The nearly monodisperse starch capped CdSe nanoparticles were successfully synthesized by a simple and 'green' route at room temperature. The as-prepared nanoparticles were characterized by X-ray diffraction (XRD), transmission electron microscope (TEM), UV-vis absorption and photoluminescence (PL) spectra. The XRD analysis showed that the starch capped CdSe nanoparticles were of the cubic structure, the average particle size was calculated to be about 3 nm according to the Debye-Scherrer equation. TEM micrographs exhibited that the starch capped CdSe nanoparticles were well dispersed than the uncapped CdSe nanoparticles, the mean particles size of the capped CdSe was about 3 nm in the TEM image, which was in good agreement with the XRD

  16. L-Cysteine Capped CdSe Quantum Dots Synthesized by Photochemical Route.

    Science.gov (United States)

    Singh, Avinash; Kunwar, Amit; Rath, M C

    2018-05-01

    L-cysteine capped CdSe quantum dots were synthesized via photochemical route in aqueous solution under UV photo-irradiation. The as grown CdSe quantum dots exhibit broad fluorescence at room temperature. The CdSe quantum dots were found to be formed only through the reactions of the precursors, i.e., Cd(NH3)2+4 and SeSO2-3 with the photochemically generated 1-hydroxy-2-propyl radicals, (CH3)2COH radicals, which are formed through the process of H atom abstraction by the photoexcited acetone from 2-propanol. L-Cysteine was found to act as a suitable capping agent for the CdSe quantum dots and increases their biocompatability. Cytotoxicty effects of these quantum dots were evaluated in Chinese Hamster Ovary (CHO) epithelial cells, indicated a significant lower level for the L-cysteine capped CdSe quantum dots as compare to the bare ones.

  17. Ordered CdSe nanoparticles within self-assembled block copolymer domains on surfaces.

    Science.gov (United States)

    Zou, Shan; Hong, Rui; Emrick, Todd; Walker, Gilbert C

    2007-02-13

    Hierarchical, high-density, ordered patterns were fabricated on Si substrates by self-assembly of CdSe nanoparticles within approximately 20-nm-thick diblock copolymer films in a controlled manner. Surface-modified CdSe nanoparticles formed well-defined structures within microphase-separated polystyrene-b-poly(2-vinylpyridine) (PS-b-P2VP) domains. Trioctylphosphine oxide (TOPO)-coated CdSe nanoparticles were incorporated into PS domains and polyethylene glycol-coated CdSe nanoparticles were located primarily in the P2VP domains. Nearly close-packed CdSe nanoparticles were clearly identified within the highly ordered patterns on Si substrates by scanning electron microscopy (SEM). Contact angle measurements together with SEM results indicate that TOPO-CdSe nanoparticles were partially placed at the air/copolymer interface.

  18. Thin film electroluminescent cells on the basis of Ce-doped CaGa2S4 and SrGa2S4 prepared by flash evaporation method

    International Nuclear Information System (INIS)

    Gambarov, E.; Bayramov, A.; Kato, A.; Iida, S.

    2006-01-01

    Ce-doped CaGa 2 S 4 and SrGa 2 S 4 thin film electroluminescent (TFEL) devices were prepared for the first time on the basis of films deposited by flash evaporation method. Significant crystallization, stoichiometry improvement of the films and increase of photoluminescence intensity were found after annealing in H 2 S and O 2 gas stream. EL spectra of the cells exhibited the characteristic double-band emission similar to that seen for Ce 3+ activated CaGa 2 S 4 and SrGa 2 S 4 films under photon excitation. Applied voltage and frequency dependences of the electroluminescence were studied. Low voltage operation as low as 20 V was observed for these cells. Luminance of about 4 cd/m 2 at 100 V operating voltage with 2.5 kHz frequency was achieved for the TFEL cell with films annealed in O 2 gas stream. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. In-Situ Survey System of Resistive and Thermoelectric Properties of Either Pure or Mixed Materials in Thin Films Evaporated Under Ultra High Vacuum

    Science.gov (United States)

    Lechevallier, L.; Le Huerou, J.-Y.; Richon, G.; Sarrau, J.-M.; Gouault, J.

    1995-04-01

    The study of thermoelectric and resistive in situ behaviours depending on temperature for thin films of either pure or composite materials obtained under ultra-high vacuum, is very interesting, since they can be used as strain gauges or superficial resistances. However, studies become particularly difficult when the measurements generate very low-level electrical signals. Indeed, these turn out to be hardly detectable because of the perturbations brought by the experimental environment. The apparatus described below allows for the measurement of resistance with a relative uncertainty of 2×10^{-4}, resistance variation with an absolute uncertainty of 2 mΩ and thermoelectric e.m.f. of about 2 μV. Films studied in the laboratory generally exhibit resistances lower than 100 Ω and resistance variations due to temperature variations of about a few ohms. So this device has sufficient technical characteristics for our studies. It can be connected to a PC, which allows for easy data collection and treatment. L'étude des comportements résistif et thermoélectrique in situ en fonction de la température de couches minces de matériaux simples ou composites obtenus en milieu raréfié s'avére intéressante en vue d'applications comme jauge de contrainte ou résistance superficielle mais particulièrement délicate lorsque les mesures donnent naissance à des signaux électriques de très faible amplitude. Ces derniers deviennent en effet difficilement décelables en raison des perturbations apportées par l'environnement expérimental. Le système qui est décrit ici permet de mesurer des résistances avec une certitude relative de 2×10^{-4} et d'apprécier des variations de résistance de 2 mΩ et des f.e.m. thermoélectriques de l'ordre de 2 μV. Les couches étudiées au laboratoire présentent généralement des résistances inférieures à 100 Ω et des variations de résistance dues aux variations de température de l'ordre de quelques Ω. Le dispositif de mesure

  20. Duplex Tear Film Evaporation Analysis.

    Science.gov (United States)

    Stapf, M R; Braun, R J; King-Smith, P E

    2017-12-01

    Tear film thinning, hyperosmolarity, and breakup can cause irritation and damage to the human eye, and these form an area of active investigation for dry eye syndrome research. Recent research demonstrates that deficiencies in the lipid layer may cause locally increased evaporation, inducing conditions for breakup. In this paper, we explore the conditions for tear film breakup by considering a model for tear film dynamics with two mobile fluid layers, the aqueous and lipid layers. In addition, we include the effects of osmosis, evaporation as modified by the lipid, and the polar portion of the lipid layer. We solve the system numerically for reasonable parameter values and initial conditions and analyze how shifts in these cause changes to the system's dynamics.

  1. Flexible, High-Speed CdSe Nanocrystal Integrated Circuits.

    Science.gov (United States)

    Stinner, F Scott; Lai, Yuming; Straus, Daniel B; Diroll, Benjamin T; Kim, David K; Murray, Christopher B; Kagan, Cherie R

    2015-10-14

    We report large-area, flexible, high-speed analog and digital colloidal CdSe nanocrystal integrated circuits operating at low voltages. Using photolithography and a newly developed process to fabricate vertical interconnect access holes, we scale down device dimensions, reducing parasitic capacitances and increasing the frequency of circuit operation, and scale up device fabrication over 4 in. flexible substrates. We demonstrate amplifiers with ∼7 kHz bandwidth, ring oscillators with <10 μs stage delays, and NAND and NOR logic gates.

  2. Effect of nitrogen flow rate on structural, morphological and optical properties of In-rich In{sub x}Al{sub 1−x}N thin films grown by plasma-assisted dual source reactive evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Alizadeh, M., E-mail: alizadeh_kozerash@yahoo.com [Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Ganesh, V.; Goh, B.T. [Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Dee, C.F.; Mohmad, A.R. [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, Bangi, Selangor (Malaysia); Rahman, S.A., E-mail: saadah@um.edu.my [Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2016-08-15

    Highlights: • In-rich In{sub x}Al{sub 1−x}N films were grown by Plasma-aided reactive evaporation. • Effect of nitrogen flow rate on the films properties was investigated. • The band gap of the films was varied from 1.17 to 0.90 eV. • By increasing N{sub 2} flow rate the In{sub x}Al{sub 1−x}N films tend to turn into amorphous state. • At higher N{sub 2} flow rate agglomeration of the particles is highly enhanced. - Abstract: In-rich In{sub x}Al{sub 1−x}N thin films were deposited on quartz substrate at various nitrogen flow rates by plasma-assisted dual source reactive evaporation technique. The elemental composition, surface morphology, structural and optical properties of the films were investigated by X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), Raman spectroscopy, X-ray diffraction (XRD), UV–vis spectrophotometer and photoluminescence (PL) measurements. XPS results revealed that the indium composition (x) of the In{sub x}Al{sub 1−x}N films increases from 0.90 to 0.97 as the nitrogen flow rate is increased from 40 to 100 sccm, respectively. FESEM images of the surface and cross-sectional microstructure of the In{sub x}Al{sub 1−x}N films showed that by increasing the N{sub 2} flow rate, the grown particles are highly agglomerated. Raman and XRD results indicated that by increasing nitrogen flow rate the In-rich In{sub x}Al{sub 1−x}N films tend to turn into amorphous state. It was found that band gap energy of the films are in the range of 0.90–1.17 eV which is desirable for the application of full spectra solar cells.

  3. Cu{sub 2}ZnSnS{sub 4} thin films obtained by sulfurization of evaporated Cu{sub 2}SnS{sub 3} and ZnS layers: Influence of the ternary precursor features

    Energy Technology Data Exchange (ETDEWEB)

    Robles, V.; Guillén, C., E-mail: c.guillen@ciemat.es; Trigo, J.F.; Herrero, J.

    2017-04-01

    Highlights: • Kesterite Cu{sub 2}ZnSnS{sub 4} is got by sulfurization of evaporated Cu{sub 2}SnS{sub 3} and ZnS layers. • Smooth films are obtained by decreasing the growth temperature of Cu{sub 2}SnS{sub 3}. • The lattice strain and the electrical conductivity increase with the Cu-content. • The energy gap diminishes as the Cu-content and/or the surface roughness increase. - Abstract: Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films have been grown by sulfurization of Cu{sub 2}SnS{sub 3} (CTS) and ZnS layers evaporated on glass substrates. Four CTS precursor films have been tested, with two different atomic compositions (Cu/Sn = 1.7 and Cu/Sn = 2.1) and substrate temperatures (350 and 450 °C), together with analogous ZnS layers deposited by maintaining the substrate at 200 °C. The sulfurization of the CTS and ZnS stacked layers was performed at 500 °C during 1 h. The evolution of the crystalline structure, morphology, optical and electrical properties from each CTS precursor to the CZTS compound has been studied, especially the influence of the ternary precursor features on the quaternary film characteristics. The kesterite structure has been identified after sulfurization of the various samples, with main (112) orientation and mean crystallite sizes S{sub 112} = 40–56 nm, being higher for the Cu-poor compositions. The CZTS average roughness has varied in a wide interval R{sub a} = 8–66 nm, being directly related to the CTS precursor layer, which becomes rougher for a higher deposition temperature or Cu content. Besides, the band gap energy and the electrical resistivity of the CZTS films have changed in the ranges E{sub g} = 1.54–1.64 eV and ρ = 0.2–40 Ωcm, both decreasing when the Cu content and/or the surface roughness increase.

  4. Evaporator Cleaning Studies

    International Nuclear Information System (INIS)

    Wilmarth, W.R.

    1999-01-01

    Operation of the 242-16H High Level Waste Evaporator proves crucial to liquid waste management in the H-Area Tank Farm. Recent operational history of the Evaporator showed significant solid formation in secondary lines and in the evaporator pot. Additional samples remain necessary to ensure material identity in the evaporator pot. Analysis of these future samples will provide actinide partitioning information and dissolution characteristics of the solid material from the pot to ensure safe chemical cleaning

  5. Evaporation and Climate Change

    NARCIS (Netherlands)

    Brandsma, T.

    1993-01-01

    In this article the influence of climate change on evaporation is discussed. The emphasis is on open water evaporation. Three methods for calculating evaporation are compared considering only changes in temperature and factors directly dependent on temperature. The Penman-method is used to

  6. Study on the optical properties of CdSe QDs with different ligands in specific matrix

    International Nuclear Information System (INIS)

    Lin Wei; Zou Wei; Du Zhongjie; Li Hangquan; Zhang Chen

    2013-01-01

    Different ligand structures of CdSe quantum dots were designed and synthesized for the specific matrix and the effect of the ligands on the photoluminescence and optical properties were further investigated. Ligand exchange reaction was used to synthesize thioglycolic acid-capped CdSe QDs and the process was characterized by FT-IR and titration. The influence of environmental pH value and storing time on the properties of thioglycolic acid-capped CdSe QDs in aqueous solution were studied by absorption and photoluminescence spectra. It was found that alkaline environment was more beneficial for the application of CdSe QDs. Therefore, the amino ligands with different molecular weight were grafted onto CdSe QDs for improving the compatibility with epoxy matrix and then amino-capped CdSe QDs/epoxy nanocomposites were fabricated. The morphologies and properties of the nanocomposites were characterized by DLS, HR-TEM, UV–Vis spectra, and photoluminescence spectra. As a result, amino ligands with short-molecular chain-capped CdSe QDs/epoxy nanocomposites exhibited good dispersion, high transparency and photoluminescence, and would be suitable for potential application in light-emitting diode device.

  7. Rate Control in Dual Source Evaporation

    NARCIS (Netherlands)

    Wielinga, T.; Gruisinga, W.; Leeuwis, H.; Lodder, J.C.; van Weers, J.F.; Wilmans, J.C.

    1980-01-01

    Two-component thin films are deposited in a high-vacuum system from two close sources, heated by an electron beam which is deflected between them. By using quartz-crystal monitors the evaporation rates are measured seperately, which is usually considered to be problematical. One rate signal is used

  8. Sulforaphane Protects the Liver against CdSe Quantum Dot-Induced Cytotoxicity.

    Directory of Open Access Journals (Sweden)

    Wei Wang

    Full Text Available The potential cytotoxicity of cadmium selenide (CdSe quantum dots (QDs presents a barrier to their use in biomedical imaging or as diagnostic and therapeutic agents. Sulforaphane (SFN is a chemoprotective compound derived from cruciferous vegetables which can up-regulate antioxidant enzymes and induce apoptosis and autophagy. This study reports the effects of SFN on CdSe QD-induced cytotoxicity in immortalised human hepatocytes and in the livers of mice. CdSe QDs induced dose-dependent cell death in hepatocytes with an IC50 = 20.4 μM. Pre-treatment with SFN (5 μM increased cell viability in response to CdSe QDs (20 μM from 49.5 to 89.3%. SFN induced a pro-oxidant effect characterized by depletion of intracellular reduced glutathione during short term exposure (3-6 h, followed by up-regulation of antioxidant enzymes and glutathione levels at 24 h. SFN also caused Nrf2 translocation into the nucleus, up-regulation of antioxidant enzymes and autophagy. siRNA knockdown of Nrf2 suggests that the Nrf2 pathway plays a role in the protection against CdSe QD-induced cell death. Wortmannin inhibition of SFN-induced autophagy significantly suppressed the protective effect of SFN on CdSe QD-induced cell death. Moreover, the role of autophagy in SFN protection against CdSe QD-induced cell death was confirmed using mouse embryonic fibroblasts lacking ATG5. CdSe QDs caused significant liver damage in mice, and this was decreased by SFN treatment. In conclusion, SFN attenuated the cytotoxicity of CdSe QDs in both human hepatocytes and in the mouse liver, and this protection was associated with the induction of Nrf2 pathway and autophagy.

  9. CdSe nanoparticles grown via radiolytic methods in aqueous solutions

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Shalini [Radiation and Photochemistry Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Rath, M.C., E-mail: madhab@barc.gov.i [Radiation and Photochemistry Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Singh, A.K. [Radiation and Photochemistry Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Mukherjee, T. [Chemistry Group, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Jayakumar, O.D.; Tyagi, A.K. [Chemistry Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Sarkar, S.K. [Radiation and Photochemistry Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India)

    2011-06-15

    Cadmium selenide, CdSe, nanoparticles have been synthesized in aqueous solution containing equimolar ammoniated CdSO{sub 4} and Na{sub 2}SeSO{sub 3} as the starting materials without any capping agents, using gamma and electron beam irradiation under a reducing condition. The radiolytic processes occurring in water result in the formation of CdSe nanoparticles through the reactions mediated by hydrated electrons, e{sub aq}{sup -}. TEM measurements revealed that the CdSe nanoparticles were found to exist in agglomerates of dimension of about 100 nm, consisting of primary nanoparticles of dimensions within 5 nm. The as-grown nanoparticles were of cubic crystalline phase as supported by the XRD measurements. These bare CdSe nanoparticles exhibit room temperature ferromagnetic (RTFM) behavior. However, the RTFM behavior was found to be 30% higher in the case of CdSe nanoparticles prepared on electron beam irradiation as compared to those obtained by gamma irradiation, which was attributed to their relatively smaller size (2-3 nm) and disordered structures as compared to those obtained in the later case (3-5 nm). -- Research highlights: {yields} CdSe nanoparticles could be synthesized in aqueous solutions containing equimolar ammoniated CdSO{sub 4} and Na{sub 2}SeSO{sub 3} as the starting materials using gamma and electron beam irradiation under a reducing condition. {yields} CdSe nanoparticles were found to exist in agglomerates of dimension of about 100 nm, consisting of primary nanoparticles of dimensions within 5 nm. {yields} CdSe nanoparticles exhibit room temperature ferromagnetic (RTFM) behavior. {yields} The RTFM behavior was found to be 30% higher in the case of CdSe nanoparticles prepared on electron beam irradiation as compared to those obtained by gamma irradiation.

  10. CdSe nanoparticles grown via radiolytic methods in aqueous solutions

    International Nuclear Information System (INIS)

    Singh, Shalini; Rath, M.C.; Singh, A.K.; Mukherjee, T.; Jayakumar, O.D.; Tyagi, A.K.; Sarkar, S.K.

    2011-01-01

    Cadmium selenide, CdSe, nanoparticles have been synthesized in aqueous solution containing equimolar ammoniated CdSO 4 and Na 2 SeSO 3 as the starting materials without any capping agents, using gamma and electron beam irradiation under a reducing condition. The radiolytic processes occurring in water result in the formation of CdSe nanoparticles through the reactions mediated by hydrated electrons, e aq - . TEM measurements revealed that the CdSe nanoparticles were found to exist in agglomerates of dimension of about 100 nm, consisting of primary nanoparticles of dimensions within 5 nm. The as-grown nanoparticles were of cubic crystalline phase as supported by the XRD measurements. These bare CdSe nanoparticles exhibit room temperature ferromagnetic (RTFM) behavior. However, the RTFM behavior was found to be 30% higher in the case of CdSe nanoparticles prepared on electron beam irradiation as compared to those obtained by gamma irradiation, which was attributed to their relatively smaller size (2-3 nm) and disordered structures as compared to those obtained in the later case (3-5 nm). -- Research highlights: → CdSe nanoparticles could be synthesized in aqueous solutions containing equimolar ammoniated CdSO 4 and Na 2 SeSO 3 as the starting materials using gamma and electron beam irradiation under a reducing condition. → CdSe nanoparticles were found to exist in agglomerates of dimension of about 100 nm, consisting of primary nanoparticles of dimensions within 5 nm. → CdSe nanoparticles exhibit room temperature ferromagnetic (RTFM) behavior. → The RTFM behavior was found to be 30% higher in the case of CdSe nanoparticles prepared on electron beam irradiation as compared to those obtained by gamma irradiation.

  11. Influence of 3D aggregation on the photoluminescence dynamics of CdSe quantum dot films

    Energy Technology Data Exchange (ETDEWEB)

    Alejo, T. [Departamento de Química Física, Facultad de Ciencias Químicas, Universidad de Salamanca, E-37008 Salamanca (Spain); Paulo, Pedro M.R. [Centro de Química Estrutural, Instituto Superior Técnico, Universidade Técnica de Lisboa, Av. Rovisco Pais 1, 1049-001 Lisboa (Portugal); Merchán, M.D. [Departamento de Química Física, Facultad de Ciencias Químicas, Universidad de Salamanca, E-37008 Salamanca (Spain); Garcia-Fernandez, Emilio; Costa, Sílvia M.B. [Centro de Química Estrutural, Instituto Superior Técnico, Universidade Técnica de Lisboa, Av. Rovisco Pais 1, 1049-001 Lisboa (Portugal); Velázquez, M.M., E-mail: mvsal@usal.es [Departamento de Química Física, Facultad de Ciencias Químicas, Universidad de Salamanca, E-37008 Salamanca (Spain)

    2017-03-15

    Thin films of semiconductor CdSe quantum dots, QDs, directly deposited onto quartz as well as onto a Langmuir-Blodgett film of the Gemini surfactant ethyl-bis (dimethyl octadecyl ammonium bromide have been prepared and their photoluminescence properties were characterized by confocal fluorescence lifetime microscopy. 3D aggregates of QDs were observed in QD films directly deposited onto the solid while the Gemini surfactant film avoids the 3D aggregation. The photoluminescence decay analysis was performed by a phenomenological model previously proposed by us which considers that the luminescence dynamics is affected by energy transport and trapping processes and the relative contribution of these processes depends on film morphology. Thus, in the non-aggregated and more homogeneous QD films, QDs deposited onto the surfactant, the relative contribution of the energy transport process increases with trap concentration while 3D aggregation favors the energy transport even at low density of energy traps. - Highlights: • Photoluminescence dynamics of QDs films. • Photoluminescence response related to energy transport and trapping processes. • Dependence of photoluminescence dynamics on film morphology.

  12. Influence of 3D aggregation on the photoluminescence dynamics of CdSe quantum dot films

    International Nuclear Information System (INIS)

    Alejo, T.; Paulo, Pedro M.R.; Merchán, M.D.; Garcia-Fernandez, Emilio; Costa, Sílvia M.B.; Velázquez, M.M.

    2017-01-01

    Thin films of semiconductor CdSe quantum dots, QDs, directly deposited onto quartz as well as onto a Langmuir-Blodgett film of the Gemini surfactant ethyl-bis (dimethyl octadecyl ammonium bromide have been prepared and their photoluminescence properties were characterized by confocal fluorescence lifetime microscopy. 3D aggregates of QDs were observed in QD films directly deposited onto the solid while the Gemini surfactant film avoids the 3D aggregation. The photoluminescence decay analysis was performed by a phenomenological model previously proposed by us which considers that the luminescence dynamics is affected by energy transport and trapping processes and the relative contribution of these processes depends on film morphology. Thus, in the non-aggregated and more homogeneous QD films, QDs deposited onto the surfactant, the relative contribution of the energy transport process increases with trap concentration while 3D aggregation favors the energy transport even at low density of energy traps. - Highlights: • Photoluminescence dynamics of QDs films. • Photoluminescence response related to energy transport and trapping processes. • Dependence of photoluminescence dynamics on film morphology.

  13. Optical sensing of triethylamine using CdSe aerogels

    International Nuclear Information System (INIS)

    Yao Qinghong; Brock, Stephanie L

    2010-01-01

    The photoluminescence (PL) response of highly porous CdSe aerogels to triethylamine (TEA) is investigated and compared to results from prior studies on single crystals and nanoparticle-polymer composites. As-prepared CdSe aerogels show significant and reversible enhancement of luminescence intensity upon exposure to TEA relative to the intensity in pure argon carrier gas. The enhancement in the PL response is dependent on the concentration and linear over the range of TEA concentration studied (4.7 x 10 3 -75 x 10 3 ppm). The sensing response of previously tested samples exhibits saturation behavior that is modeled using Langmuir adsorption isotherms, yielding adsorption equilibrium constants in the range 300-380 atm -1 . The response is sensitively affected by the surface characteristics of the aerogel; when the wet gels are treated with pyridine prior to aerogel formation, the response to TEA is diminished, and when as-prepared aerogels are heated in a vacuum, no subsequent response is observed. Deactivation is attributed to an increase in surface oxide (SeO 2 ) and decrease in surface Cd 2+ Lewis acid sites. Sensing runs of approximately one hour have little impact on the morphology or crystallinity of the aerogels, but do result in partial removal of residual thiolate ligands left over from the gelation process.

  14. Synthesis and characterization of Fe doped cadmium selenide thin films by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, Abhijit A., E-mail: aay_physics@yahoo.co.in [Thin Film Physics Laboratory, Department of Physics, Electronics and Photonics, Rajarshi Shahu Mahavidyalaya, Latur 413 512, Maharashtra (India)

    2012-12-05

    Highlights: Black-Right-Pointing-Pointer Simple and inexpensive method to dope trivalent Fe in CdSe thin films. Black-Right-Pointing-Pointer Fe doped CdSe thin films are highly photosensitive. Black-Right-Pointing-Pointer AFM analysis shows uniform deposition of film over the entire substrate surface. Black-Right-Pointing-Pointer The band gap energy decreases from 1.74 to 1.65 eV with Fe doping. Black-Right-Pointing-Pointer Film resistivity decreases to 6.76 Multiplication-Sign 10{sup 4} {Omega}-cm with Fe doping in CdSe thin films. - Abstract: Undoped and Fe doped CdSe thin films have been deposited onto the amorphous and fluorine doped tin oxide coated glass substrates by spray pyrolysis. The Fe doping concentration has been optimized by photoelectrochemical (PEC) characterization technique. The structural, surface morphological, compositional, optical and electrical properties of undoped and Fe doped CdSe thin films have been studied. X-ray diffraction study reveals that the as deposited CdSe films possess hexagonal crystal structure with preferential orientation along (1 0 0) plane. AFM analysis shows uniform deposition of the film over the entire substrate surface with minimum surface roughness of 7.90 nm. Direct allowed type of transition with band gap decreasing from 1.74 to 1.65 eV with Fe doping has been observed. The activation energy of the films has been found to be in the range of 0.14-0.19 eV at low temperature and 0.27-0.44 eV at high temperature. Semi-conducting behavior has been observed from resistivity measurements. The thermoelectric power measurements reveal that the films are of n type.

  15. Synthesis of Monodisperse CdSe QDs using Controlled Growth Temperatures

    International Nuclear Information System (INIS)

    Noor Razinah Rahmat; Akrajas Ali Umar; Muhammad Yahya; Muhamad Mat Salleh; Mohammad Hafizuddin Jumali

    2011-01-01

    The effect of growth temperatures on size of CdSe quantum dots (QDs) has been investigated. CdSe QDs were synthesized using thermolysis of organometallics precursor route using wet chemical method. The growth temperature was varied from 260-310 degree Celsius with growth period fixed at 60 s. As the growth temperature increased, the monodispersed CdSe QDs with diameter in the range 3-7 nm were obtained. Both absorption and PL spectra of the QDs revealed a strong red-shift supporting the increment size of QDs with the rise of growth temperature. (author)

  16. Stability studies of CdSe nanocrystals in an aqueous environment

    DEFF Research Database (Denmark)

    Xi, Lifei; Lek, Jun Yan; Liang, Yen Nan

    2011-01-01

    In this paper, CdSe nanocrystal dissolution in an aqueous solution was studied. It was found that light is a key factor affecting the dissolution of nanocrystals. In the presence of light, the electrons generated from CdSe nanocrystals reduce water to hydrogen and hydroxide ions (OH − ) while photo......-generated holes oxidize CdSe to Cd2 + and elemental Se. The dissolution was accelerated in an acidic medium while moderate alkalinity (pH = 10.3) can slow down the dissolution possibly due to precipitation of nanocrystals. This study has strong implications for the use of these crystals in aqueous environments...

  17. Structure and thermal stability of arc evaporated (Ti{sub 0.33}Al{sub 0.67}){sub 1-x}Si{sub x}N thin films

    Energy Technology Data Exchange (ETDEWEB)

    Flink, A. [Department of Physics, Chemistry, and Biology (IFM) Linkoeping University, SE-581 83 Linkoeping (Sweden)], E-mail: axefl@ifm.liu.se; Andersson, J.M. [Seco Tools AB, SE-737 82 Fagersta (Sweden); Alling, B. [Department of Physics, Chemistry, and Biology (IFM) Linkoeping University, SE-581 83 Linkoeping (Sweden); Institute of Physics of Complex Matter, Swiss Federal Institute of Technology, Lausanne (EPFL) 1015 Lausanne (Switzerland); Daniel, R. [Christian Doppler Laboratory for Advanced Hard Coatings, Department of Physical Metallurgy, University of Leoben, A-8700 Leoben (Austria); Sjoelen, J.; Karlsson, L. [Seco Tools AB, SE-737 82 Fagersta (Sweden); Hultman, L. [Department of Physics, Chemistry, and Biology (IFM) Linkoeping University, SE-581 83 Linkoeping (Sweden)

    2008-11-28

    (Ti{sub 0.33}Al{sub 0.67}){sub 1-x}Si{sub x}N (0 {<=} x {<=} 0.29) thin solid films were deposited onto cemented carbide substrates by arc evaporation and analyzed using analytical electron microscopy, X-ray diffraction, nanoindentation, and density functional theory. As-deposited films with x {<=} 0.02 consisted mainly of a metastable c-(Ti,Al)N solid solution for which Si serves as a veritable grain refiner. Additional Si promoted growth of a hexagonal wurtzite (Al,Ti,Si)N solid solution, which dominated at 0.02 < x < 0.17. For x {>=} 0.17, the films were X-ray amorphous. Despite these widely different microstructures, all as-deposited films had nanoindentation hardness in the narrow range of 22-25 GPa. Isothermal annealing of the x = 0.01 alloy film at a temperature of 900 deg. C , corresponding to that in turning operation, resulted in spinodal decomposition into c-AlN and TiN and precipitation of h-AlN. For x = 0.09 films, annealing between 600 deg. C and 1000 deg. C yielded c-TiN precipitation from the h-(Al,Ti,Si)N phase. Furthermore, the x = 0.01 and x = 0.09 films exhibited substantial age hardening at 900 deg. C , to 34 GPa and 29 GPa due to spinodal decomposition and c-TiN precipitation, respectively. Films with a majority of c-(Ti,Al)N phase worked best in steel turning tests, while films with x > 0.02 developed cracks during such operation. We propose that the cracks are due to tensile strain which is caused by a decrease in molar volume during the phase transformation from hexagonal wurtzite (Al,Ti,Si)N into cubic TiN phase, which results in degradation in machining performance.

  18. Effect of the ITO substrate on the growth of Cu(In,Ga)Se{sub 2}, CuGa{sub 3}Se{sub 5}, CuGa{sub 5}Se{sub 8} and CuIn{sub 3}Se{sub 5} thin films by flash evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Friedrich, E J; Merino, J M; Leon, M [Department of Applied Physics, Universidad Autonoma de Madrid (UAM), Cantoblanco, 28049 Madrid (Spain); Trigo, J F; Guillen, C [Department of Energy, CIEMAT, Avda Complutense, 22, 28040 Madrid (Spain); Ramiro, J, E-mail: josue.friedrich@uam.e [Department of Theory of Signal and Communications, URJC, Campus Fuenlabrada, 122, 28943 Madrid (Spain)

    2009-04-21

    Structural, compositional, electrical and morphological properties of CuIn{sub 1-x}Ga{sub x}Se{sub 2} (x = 0.15, 0.30) and ordered defect compounds (ODC) CuGa{sub 3}Se{sub 5}, CuGa{sub 5}Se{sub 8}, CuIn{sub 3}Se{sub 5} thin films grown by flash evaporation onto soda lime glass substrates (SLG) and ITO/SLG have been studied. Polycrystalline thin films with accentuated preferential orientation in the (1 1 2) plane of the tetragonal structure have been obtained. Annealing in Se atmosphere improves the structural, morphological, electrical and optical properties of the evaporated films, but provokes the formation of a CuIn{sub x}Se{sub y} phase on the surface of the films. Band gap values ranging between 1.01 and 1.21 eV have been obtained for the as-grown CuIn{sub 1-x}Ga{sub x}Se{sub 2} thin films and between 1.09 and 2.01 eV for the CuGa{sub 3}Se{sub 5}, CuGa{sub 5}Se{sub 8} and CuIn{sub 3}Se{sub 5} thin films.

  19. Green wet chemical route to synthesize capped CdSe quantum dots

    Indian Academy of Sciences (India)

    In the present work, we report green synthesis of tartaric acid (TA) and triethanolamine (TEA) capped ... CdSe quantum dots; chemical bath deposition; capping; green chemistry; nanomaterials. 1. .... at high concentration of nanoparticles.

  20. Enhancing Photocatalytic Degradation of Methyl Blue Using PVP-Capped and Uncapped CdSe Nanoparticles

    Directory of Open Access Journals (Sweden)

    Kgobudi Frans Chepape

    2017-01-01

    Full Text Available Quantum confinement of semiconductor nanoparticles is a potential feature which can be interesting for photocatalysis, and cadmium selenide is one simple type of quantum dot to use in the following photocatalytic degradation of organic dyes. CdSe nanoparticles capped with polyvinylpyrrolidone (PVP in various concentration ratios were synthesized by the chemical reduction method and characterized. The transmission electron microscopy (TEM analysis of the samples showed that 50% PVP-capped CdSe nanoparticles were uniformly distributed in size with an average of 2.7 nm and shape which was spherical-like. The photocatalytic degradation of methyl blue (MB in water showed efficiencies of 31% and 48% when using uncapped and 50% PVP-capped CdSe nanoparticles as photocatalysts, respectively. The efficiency of PVP-capped CdSe nanoparticles indicated that a complete green process can be utilized for photocatalytic treatment of water and waste water.

  1. Low Temperature Synthesis of CdSe Quantum Dots with Amine Derivative and Their Chemical Kinetics

    Science.gov (United States)

    Seongmi Hwang,; Youngmin Choi,; Sunho Jeong,; Hakyun Jung,; Chang Gyoun Kim,; Teak-Mo Chung,; Beyong-Hwan Ryu,

    2010-05-01

    The chemical kinetics of growing CdSe nanocrystals was studied in order to investigate the effects of amine capping agents on the size of resulting quantum dots (QDs). CdSe QDs were prepared in phenyl ether, and the amine ligand dependence of QD size was determined. The results show that the size of CdSe nanocrystals can be regulated by controlling reaction rate, with smaller QDs being formed in slower processes. The results of photoluminescence (PL) studies show that the emission wavelengths of the QDs well correlate with particle size. This simple process for forming different-sized QDs, which uses a cheap solvent and various capping agents, has the potential for preparing CdSe nanocrystals more economically.

  2. Structural, optical and magnetic properties of cobalt-doped CdSe ...

    Indian Academy of Sciences (India)

    Administrator

    Abstract. Pure and Co-doped CdSe nanoparticles have been synthesized by hydrothermal technique. The ... Keywords. Nanoparticles; dilute magnetic semiconductor; ferromagnetism. ... dium dodecyl sulfate (SDS) was used as a surfactant in.

  3. Hole transfer from CdSe nanoparticles to TQ1 polymer in hybrid solar cell device

    Science.gov (United States)

    Sohail, Muhammad; Shah, Zawar Hussain; Saeed, Shomaila; Bibi, Nasreen; Shahbaz, Sadia; Ahmed, Safeer; Shabbir, Saima; Siddiq, Muhammad; Iqbal, Azhar

    2018-05-01

    In view of realizing the economic viability, we fabricate a solar cell device containing low band gap and easily processable polymer 5-yl-8-(thiophene-2,5-diyl)-2,3-bis(3-(octyloxy)phenyl) quinoxaline (TQ1) and CdSe nanoparticles (NPs) and investigate its charge transport properties. When the TQ1 is combined with the CdSe NPs a strong photoluminescence quenching and shortening of photoluminescence lifetime of the TQ1 is observed indicating exciton transfer from TQ1 to the CdSe NPs. The time-resolved photoluminescence further reveals that the exciton transfer from the polymer to CdSe NPs is very efficient (68%) and it occurs in solar cell as compared to polymer only device. These observations suggest the importance of other II-VI semiconductor NPs to achieve higher efficiency for photovoltaic devices containing TQ1 polymer.

  4. Center for Development of Security Excellence (CDSE) 2013 Year End Report

    Science.gov (United States)

    2013-01-01

    Humphrey Deputy Director, CDSE CDSE STATEMENT Lorem ipsum dolor sit amet, consectetur adipiscing elit. Nunc bibendum dapibus dui, at porta nunc. In eget...accumsan odio. Donec rutrum varius purus, vitae venenatis urna porttitor eget. Mauris lorem dolor , facilisis eget purus quis, adipiscing tincidunt...ac quam at gravida. Cras a ligula suscipit, lobortis dolor vel, feugiat diam. Proin mattis lectus sit amet pellentesque interdum. Cras porttitor

  5. Synthesis of CdSe quantum dots for quantum dot sensitized solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Neetu, E-mail: singh.neetu1985@gmail.com; Kapoor, Avinashi [Department of Electronic Science, University of Delhi South Campus, New Delhi-110 021 (India); Kumar, Vinod [Department of Physics, University of the Free State, Bloemfontein, ZA9300 (South Africa); Mehra, R. M. [School of Engineering and Technology, Sharda University, Greater Noida-201 306, U.P. (India)

    2014-04-24

    CdSe Quantum Dots (QDs) of size 0.85 nm were synthesized using chemical route. ZnO based Quantum Dot Sensitized Solar Cell (QDSSC) was fabricated using CdSe QDs as sensitizer. The Pre-synthesized QDs were found to be successfully adsorbed on front ZnO electrode and had potential to replace organic dyes in Dye Sensitized Solar Cells (DSSCs). The efficiency of QDSSC was obtained to be 2.06 % at AM 1.5.

  6. Size and temperature dependence of the tensile mechanical properties of zinc blende CdSe nanowires

    International Nuclear Information System (INIS)

    Fu, Bing; Chen, Na; Xie, Yiqun; Ye, Xiang; Gu, Xiao

    2013-01-01

    The effect of size and temperature on the tensile mechanical properties of zinc blende CdSe nanowires is investigated by all atoms molecular dynamic simulation. We found the ultimate tensile strength and Young's modulus will decrease as the temperature and size of the nanowire increase. The size and temperature dependence are mainly attributed to surface effect and thermally elongation effect. High reversibility of tensile behavior will make zinc blende CdSe nanowires suitable for building efficient nanodevices.

  7. Ultrasonic attenuation of CdSe at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, B.J., E-mail: braulio@ula.v [Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes Apartado de Correos No.1, La Hechicera, Merida 5251 (Venezuela, Bolivarian Republic of); Calderon, E.; Bracho, D.B. [Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes Apartado de Correos No.1, La Hechicera, Merida 5251 (Venezuela, Bolivarian Republic of); Perez, J.F. [Laboratorio de Instrumentacion Cientifica, Facultad de Ciencias, Universidad de Los Andes Apartado de Correos No.1, La Hechicera, Merida 5251 (Venezuela, Bolivarian Republic of)

    2010-08-01

    The ultrasonic attenuation of a single crystal of CdSe has been investigated over the temperature range from 1.2 to 300 K at frequencies of 10, 30 and 90 MHz. We report here the temperature dependence of the attenuation in the range 1.2-30 K for piezoactive and non-piezoactive acoustic waves. A temperature-induced relaxation for two piezoactive waves, which scale with frequency towards higher temperatures, was found. A modified Hutson and White model with a new parameter {gamma} is proposed to explain the relaxation maxima of our data and others in the literature. In this model the parameter {gamma}, which seems to be closely related to the compensation, takes into account the impurities-sound wave piezoelectric coupling. By inverting the proposed expression for the sound attenuation to obtain the electrical conductivity from the relaxation, it is found that impurity conductivity of the hopping type is the dominant conduction process at low temperatures.

  8. Ultrasonic attenuation of CdSe at low temperatures

    International Nuclear Information System (INIS)

    Fernandez, B.J.; Calderon, E.; Bracho, D.B.; Perez, J.F.

    2010-01-01

    The ultrasonic attenuation of a single crystal of CdSe has been investigated over the temperature range from 1.2 to 300 K at frequencies of 10, 30 and 90 MHz. We report here the temperature dependence of the attenuation in the range 1.2-30 K for piezoactive and non-piezoactive acoustic waves. A temperature-induced relaxation for two piezoactive waves, which scale with frequency towards higher temperatures, was found. A modified Hutson and White model with a new parameter γ is proposed to explain the relaxation maxima of our data and others in the literature. In this model the parameter γ, which seems to be closely related to the compensation, takes into account the impurities-sound wave piezoelectric coupling. By inverting the proposed expression for the sound attenuation to obtain the electrical conductivity from the relaxation, it is found that impurity conductivity of the hopping type is the dominant conduction process at low temperatures.

  9. Microwave heating type evaporator

    International Nuclear Information System (INIS)

    Taura, Masazumi; Nishi, Akio; Morimoto, Takashi; Izumi, Jun; Tamura, Kazuo; Morooka, Akihiko.

    1987-01-01

    Purpose: To prevent evaporization stills against corrosion due to radioactive liquid wastes. Constitution: Microwaves are supplied from a microwave generator by way of a wave guide tube and through a microwave permeation window to the inside of an evaporatization still. A matching device is attached to the wave guide tube for transmitting the microwaves in order to match the impedance. When the microwaves are supplied to the inside of the evaporization still, radioactive liquid wastes supplied from a liquid feed port by way of a spray tower to the inside of the evaporization still is heated and evaporated by the induction heating of the microwaves. (Seki, T.)

  10. Modeling Evaporation and Particle Assembly in Colloidal Droplets.

    Science.gov (United States)

    Zhao, Mingfei; Yong, Xin

    2017-06-13

    Evaporation-induced assembly of nanoparticles in a drying droplet is of great importance in many engineering applications, including printing, coating, and thin film processing. The investigation of particle dynamics in evaporating droplets can provide fundamental hydrodynamic insight for revealing the processing-structure relationship in the particle self-organization induced by solvent evaporation. We develop a free-energy-based multiphase lattice Boltzmann method coupled with Brownian dynamics to simulate evaporating colloidal droplets on solid substrates with specified wetting properties. The influence of interface-bound nanoparticles on the surface tension and evaporation of a flat liquid-vapor interface is first quantified. The results indicate that the particles at the interface reduce surface tension and enhance evaporation flux. For evaporating particle-covered droplets on substrates with different wetting properties, we characterize the increase of evaporate rate via measuring droplet volume. We find that droplet evaporation is determined by the number density and circumferential distribution of interfacial particles. We further correlate particle dynamics and assembly to the evaporation-induced convection in the bulk and on the surface of droplet. Finally, we observe distinct final deposits from evaporating colloidal droplets with bulk-dispersed and interface-bound particles. In addition, the deposit pattern is also influenced by the equilibrium contact angle of droplet.

  11. Black hole evaporation in conformal gravity

    Energy Technology Data Exchange (ETDEWEB)

    Bambi, Cosimo; Rachwał, Lesław [Center for Field Theory and Particle Physics and Department of Physics, Fudan University, 220 Handan Road, 200433 Shanghai (China); Modesto, Leonardo [Department of Physics, Southern University of Science and Technology, 1088 Xueyuan Road, Shenzhen 518055 (China); Porey, Shiladitya, E-mail: bambi@fudan.edu.cn, E-mail: lmodesto@sustc.edu.cn, E-mail: shilp@iitk.ac.in, E-mail: rachwal@fudan.edu.cn [Department of Physics, Indian Institute of Technology, 208016 Kanpur (India)

    2017-09-01

    We study the formation and the evaporation of a spherically symmetric black hole in conformal gravity. From the collapse of a spherically symmetric thin shell of radiation, we find a singularity-free non-rotating black hole. This black hole has the same Hawking temperature as a Schwarzschild black hole with the same mass, and it completely evaporates either in a finite or in an infinite time, depending on the ensemble. We consider the analysis both in the canonical and in the micro-canonical statistical ensembles. Last, we discuss the corresponding Penrose diagram of this physical process.

  12. Charge separation in contact systems with CdSe quantum dot layers

    International Nuclear Information System (INIS)

    Zillner, Elisabeth Franziska

    2013-01-01

    Quantum dot (QD) solar cells are a fast developing area in the field of solution processed photovoltaics. Central aspects for the application of QDs in solar cells are separation and transport of charge carriers in the QD layers and the formation of charge selective contacts. Even though efficiencies of up to 7% were reached in QD solar cells, these processes are not yet fully understood. In this thesis the mechanisms of charge separation, transport and recombination in CdSe QD layers and layer systems were studied. Charge separation was measured via surface photovoltage (SPV) at CdSe QD layers with thicknesses in the range of monolayers. To determine the influence of interparticle distance of QDs and trap states on the surface of QDs on charge separation, QDs with four different surfactant layers were studied. Layers of CdSe QDs were prepared on ITO, Si, SiO 2 and CdS by dip coating under inert atmosphere. The layers were characterized by Rutherford backscattering spectrometry, UV-vis spectroscopy, step profilometry and scanning electron microscopy to determine the areal density, the absorption and thickness of CdSe QD monolayers. SPV measurements show that initial charge separation from the CdSe QDs on ITO only happened from the fi rst monolayer of QDs. Electrons, photo-excited in the fi rst monolayer of CdSe QDs, were trapped on the ITO surface. The remaining free holes were trapped in surface states and/or diffused into the neighboring QD layers. The thick surfactant layer (∼ 1.6 nm) of pristine QDs had to be reduced by washing and/or ligand exchange for separation of photo-excited charge carriers. Both, interparticle distance and trap density, influenced the processes of charge separation and recombination. SPV transients of CdSe monolayers could be described by a single QD approximation model, based on Miller-Abrahams hopping of holes between the delocalized excitonic state, traps on the surface of the QD and the filled trap on the ITO surface

  13. Charge separation in contact systems with CdSe quantum dot layers

    Energy Technology Data Exchange (ETDEWEB)

    Zillner, Elisabeth Franziska

    2013-03-06

    Quantum dot (QD) solar cells are a fast developing area in the field of solution processed photovoltaics. Central aspects for the application of QDs in solar cells are separation and transport of charge carriers in the QD layers and the formation of charge selective contacts. Even though efficiencies of up to 7% were reached in QD solar cells, these processes are not yet fully understood. In this thesis the mechanisms of charge separation, transport and recombination in CdSe QD layers and layer systems were studied. Charge separation was measured via surface photovoltage (SPV) at CdSe QD layers with thicknesses in the range of monolayers. To determine the influence of interparticle distance of QDs and trap states on the surface of QDs on charge separation, QDs with four different surfactant layers were studied. Layers of CdSe QDs were prepared on ITO, Si, SiO{sub 2} and CdS by dip coating under inert atmosphere. The layers were characterized by Rutherford backscattering spectrometry, UV-vis spectroscopy, step profilometry and scanning electron microscopy to determine the areal density, the absorption and thickness of CdSe QD monolayers. SPV measurements show that initial charge separation from the CdSe QDs on ITO only happened from the fi rst monolayer of QDs. Electrons, photo-excited in the fi rst monolayer of CdSe QDs, were trapped on the ITO surface. The remaining free holes were trapped in surface states and/or diffused into the neighboring QD layers. The thick surfactant layer ({approx} 1.6 nm) of pristine QDs had to be reduced by washing and/or ligand exchange for separation of photo-excited charge carriers. Both, interparticle distance and trap density, influenced the processes of charge separation and recombination. SPV transients of CdSe monolayers could be described by a single QD approximation model, based on Miller-Abrahams hopping of holes between the delocalized excitonic state, traps on the surface of the QD and the filled trap on the ITO surface

  14. STUDI EKSPERIMENTAL FALLING FILM EVAPORATOR PADA EVAPORASI NIRA KENTAL

    Directory of Open Access Journals (Sweden)

    Medya Ayunda Fitri

    2016-06-01

    Full Text Available Falling film evaporator is a constructed equipment for concentrating dilute solution that are sensitive to heat flowing form a thin film. This research aims to study the evaporation of cane juice concentrated with air flow on falling film evaporator and knowing evaporation rate occured in falling film evaporator used. In the process, cane juice from plant pumped to the falling film evaporator that used in this experiment. This research used concentrated cane juice and air flow rate for variables of this experiment. Cane juice flow from top of evaporator through distributor to form thin film and air flow from the bottom of evaporator. After that, temperatur of pipe wall, inlet and outlet temperature of cane juice and air were measured. This experiment concluded that the highest concentration of outlet solution is 59 brix for liquid flow rate 154 l/h and air flow rate 10 m3/h, and the other hand inlet solution concentration 51 brix. Optimum evaporation rate is 35 kg/m2.h for 51 brix and air flow rate 10 m3/h.

  15. Evaporation of Sunscreen Films: How the UV Protection Properties Change.

    Science.gov (United States)

    Binks, Bernard P; Brown, Jonathan; Fletcher, Paul D I; Johnson, Andrew J; Marinopoulos, Ioannis; Crowther, Jonathan M; Thompson, Michael A

    2016-06-01

    We have investigated the evaporation of thin sunscreen films and how the light absorption and the derived sun protection factor (SPF) change. For films consisting of solutions of common UV filters in propylene glycol (PG) as solvent, we show how evaporation generally causes three effects. First, the film area can decrease by dewetting leading to a transient increase in the average film thickness. Second, the film thins by evaporative loss of the solvent. Third, precipitation of the UV filter occurs when solvent loss causes the solubility limit to be reached. These evaporation-induced changes cause the UV absorbance of the film to decrease with resultant loss of SPF over the time scale of the evaporation. We derive an approximate model which accounts semiquantitatively for the variation of SPF with evaporation. Experimental results for solutions of different UV filters on quartz, different skin mimicking substrates, films with added nanoparticles, films with an added polymer and films with fast-evaporating decane as solvent (instead of slow evaporating PG) are discussed and compared with model calculations. Addition of either nanoparticles or polymer suppress film dewetting. Overall, it is hoped that the understanding gained about the mechanisms whereby film evaporation affects the SPF will provide useful guidance for the formulation of more effective sunscreens.

  16. Controlling the magic and normal sizes of white CdSe quantum dots

    Science.gov (United States)

    Su, Yu-Sheng; Chung, Shu-Ru

    2017-08-01

    In this study, we have demonstrated a facile chemical route to prepare CdSe QDs with white light emission, and the performance of white CdSe-based white light emitting diode (WLED) is also exploded. An organic oleic acid (OA) is used to form Cd-OA complex first and hexadecylamine (HDA) and 1-octadecene (ODE) is used as surfactants. Meanwhile, by varying the reaction time from 1 s to 60 min, CdSe QDs with white light can be obtained. The result shows that the luminescence spectra compose two obvious emission peaks and entire visible light from 400 to 700 nm, when the reaction time less than 10 min. The wide emission wavelength combine two particle sizes of CdSe, magic and normal, and the magic-CdSe has band-edge and surface-state emission, while normal size only possess band-edge emission. The TEM characterization shows that the two different sizes with diameter of 1.5 nm and 2.7 nm for magic and normal size CdSe QDs can be obtained when the reaction time is 4 min. We can find that the magic size of CdSe is produced when the reaction time is less than 3 min. In the time ranges from 3 to 10 min, two sizes of CdSe QDs are formed, and with QY from 20 to 60 %. Prolong the reaction time to 60 min, only normal size of CdSe QD can be observed due to the Ostwald repining, and its QYs is 8 %. Based on the results we can conclude that the two emission peaks are generated from the coexistence of magic size and normal size CdSe to form the white light QDs, and the QY and emission wavelength of CdSe QDs can be increased with prolonging reaction time. The sample reacts for 2 (QY 30 %), 4 (QY 32 %) and 60 min (QY 8 %) are choosing to mixes with transparent acrylic-based UV curable resin for WLED fabrication. The Commission International d'Eclairage (CIE) chromaticity, color rendering index (CRI), and luminous efficacy for magic, mix, and normal size CdSe are (0.49, 0.44), 81, 1.5 lm/W, (0.35, 0.30), 86, 1.9 lm/W, and (0.39, 0.25), 40, 0.3 lm/W, respectively.

  17. Evaporation, Boiling and Bubbles

    Science.gov (United States)

    Goodwin, Alan

    2012-01-01

    Evaporation and boiling are both terms applied to the change of a liquid to the vapour/gaseous state. This article argues that it is the formation of bubbles of vapour within the liquid that most clearly differentiates boiling from evaporation although only a minority of chemistry textbooks seems to mention bubble formation in this context. The…

  18. Hydrothermal assisted growth of CdSe nanoparticles and study on its dielectric properties

    Science.gov (United States)

    Jamble, Shweta N.; Ghoderao, Karuna P.; Kale, Rohidas B.

    2017-11-01

    In this work, we have synthesized cadmium selenide (CdSe) nanoparticles by using cadmium chloride (CdCl2) as cadmium ion and sodium selenosulfate (Na2SeSO3) as selenium ion sources through a simple, convenient and cost-effective hydrothermal route at 180 °C temperature for 24 h. Aqueous ammonia was employed as a complex reagent to adjust the pH of the solution. Structural analysis of the obtained product was carried out by using x-ray diffractometer, which revealed that the final product has a cubic structure of CdSe with average crystallite size 13.15 nm. The cauliflower-like CdSe nanostructures were confirmed from the scanning electron microscopy and high-resolution transmission electron microscopy. EDS analysis indicates that the obtained product has a good elemental stoichiometric ratio. The electron diffraction pattern reveals the polycrystalline nature of CdSe. From UV-visible absorption spectral analysis, the optical energy bandgap of CdSe nanoparticles was found to be 1.90 eV. XPS spectra presented Cd 3d3/2, Cd 3d5/2 and Se 3d3/2 peaks at 411.04, 404.29 and 53.52 eV respectively. The CdSe nanoparticles exhibit photoluminescence with two distinct emission bands at 632 nm and 720 nm. FTIR study was used towards the understanding of the formation mechanism and bonding on the surface of the resulting nanoparticles. The dielectric properties of a pelletized sample of CdSe nanoparticles were carried out at room temperature.

  19. Timely resolved measurements on CdSe nanoparticles

    International Nuclear Information System (INIS)

    Holt, B.E. von

    2006-01-01

    By means of infrared spectroscopy the influence of the organic cover on structure and dynamics of CdSe nanoparticles was studied. First a procedure was developed, which allows to get from the static infrared spectrum informations on the quality of the organic cover and the binding behaviour of the ligands. On qualitatively high-grade and well characterized samples thereafter the dynamics of the lowest-energy electron level 1S e was time-resolvedly meausred in thew visible range. As reference served CdSe TOPO, which was supplemented by samples with the ligands octanthiole, octanic acid, octylamine, naphthoquinone, benzoquinone, and pyridine. The studied nanoparticles had a diameter of 4.86 nm. By means of the excitation-scanning or pump=probe procedure first measurements in the picosecond range were performed. The excitation wavelengths were thereby spectrally confined and so chosen that selectively the transitions 1S 3/2 -1S-e and 1P 3/2 -1P e but not the intermediately lyingt transition 2S 3/2 -1S e were excited. The excitation energies were kept so low that the excitation of several excitons in one crystal could be avoided. The scanning wavelength in the infrared corresponded to the energy difference between the electron levels 1S e and 1P e . The transients in the picosecond range are marked by a steep increasement of the signal, on which a multi-exponential decay follows. The increasement, which reproduces the popiulation of the excited state, isa inependent on the choice of the ligands. The influence of the organic cover is first visible in the different decay times of the excited electron levels. the decay of the measurement signal of CdSe TOPO can be approximatively described by three time constants: a decay constant in the early picosecond region, a time constant around hundert picoseconds, and a time constant of some nanoseconds. At increasing scanning wavelength the decay constants become longer. By directed excitation of the 1S 3/2 -1S e and the 1P 3

  20. Vacuum evaporation of pure metals

    OpenAIRE

    Safarian, Jafar; Engh, Thorvald Abel

    2013-01-01

    Theories on the evaporation of pure substances are reviewed and applied to study vacuum evaporation of pure metals. It is shown that there is good agreement between different theories for weak evaporation, whereas there are differences under intensive evaporation conditions. For weak evaporation, the evaporation coefficient in Hertz-Knudsen equation is 1.66. Vapor velocity as a function of the pressure is calculated applying several theories. If a condensing surface is less than one collision...

  1. Evaporation in hydrology and meteorology

    OpenAIRE

    Brandsma, T.

    1990-01-01

    In this paper the role of evaporation in hydrology and meteorology is discussed, with the emphasis on hydrology. The basic theory of evaporation is given and methods to determine evaporation are presented. Some applications of evaporation studies in literature are given in order to illustrate the theory. Further, special conditions in evaporation are considered, followed by a fotmulation of the difficulties in determining evaporation, The last part of the paper gives a short discussion about ...

  2. Study of structural and optical properties of Cd{sub 1-x}Zn{sub x}Se thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wahab, L.A., E-mail: aly_lo2003@yahoo.com [National Center for Radiation Research and Technology, Nasr City, Cairo (Egypt); Zayed, H.A. [University Collage of Women for Art, Science and Education, Ain Shams University, Cairo (Egypt); El-Galil, A.A. Abd [National Center for Radiation Research and Technology, Nasr City, Cairo (Egypt)

    2012-06-01

    Cd{sub 1-x}Zn{sub x}Se (x = 0, 0.5 and 1) thin films have been deposited onto glass substrates using thermal evaporation technique. The lattice constants, grain size, microstrain and dislocation density were studied by using X-ray diffraction. In addition the optical constants were calculated in the wavelength range 400-2500 nm. Transmittance and reflectance were used to calculate the absorption coefficient {alpha} and the optical band gap E{sub g}. The linear relation of ({alpha}h{upsilon}){sup 2} as a function of photon energy h{upsilon} for the thin films illustrated that the films exhibit a direct band gap, which increases with increasing Zn content. This increasing of optical band gap was interpreted in accordance to the increasing in the cohesive energy. Optical constants, such as refractive index n, optical conductivity {sigma}{sub opt}, complex dielectric constant, relaxation time {tau} and dissipation factor tan{delta} were determined. The optical dispersion parameters E{sub 0}, E{sub d} were determined according to Wemple and Di Domenico method. - Highlights: Black-Right-Pointing-Pointer ZnSe thin film has cubic zinc blende structure while CdSe and Cd{sub 0.5}Zn{sub 0.5}Se thin films have hexagonal structure. Black-Right-Pointing-Pointer Grain size of Cd{sub 1-x}Zn{sub x}Se decreases with increasing x (x = 0, 0.5 and 1). Black-Right-Pointing-Pointer Optical band gap increases with increasing x.

  3. Evaporation under vacuum condition

    International Nuclear Information System (INIS)

    Mizuta, Satoshi; Shibata, Yuki; Yuki, Kazuhisa; Hashizume, Hidetoshi; Toda, Saburo; Takase, Kazuyuki; Akimoto, Hajime

    2000-01-01

    In nuclear fusion reactor design, an event of water coolant ingress into its vacuum vessel is now being considered as one of the most probable accidents. In this report, the evaporation under vacuum condition is evaluated by using the evaporation model we have developed. The results show that shock-wave by the evaporation occurs whose behavior strongly depends on the initial conditions of vacuum. And in the case of lower initial pressure and temperature, the surface temp finally becomes higher than other conditions. (author)

  4. Quantum chemistry of the minimal CdSe clusters

    Science.gov (United States)

    Yang, Ping; Tretiak, Sergei; Masunov, Artëm E.; Ivanov, Sergei

    2008-08-01

    Colloidal quantum dots are semiconductor nanocrystals (NCs) which have stimulated a great deal of research and have attracted technical interest in recent years due to their chemical stability and the tunability of photophysical properties. While internal structure of large quantum dots is similar to bulk, their surface structure and passivating role of capping ligands (surfactants) are not fully understood to date. We apply ab initio wavefunction methods, density functional theory, and semiempirical approaches to study the passivation effects of substituted phosphine and amine ligands on the minimal cluster Cd2Se2, which is also used to benchmark different computational methods versus high level ab initio techniques. Full geometry optimization of Cd2Se2 at different theory levels and ligand coverage is used to understand the affinities of various ligands and the impact of ligands on cluster structure. Most possible bonding patterns between ligands and surface Cd/Se atoms are considered, including a ligand coordinated to Se atoms. The degree of passivation of Cd and Se atoms (one or two ligands attached to one atom) is also studied. The results suggest that B3LYP/LANL2DZ level of theory is appropriate for the system modeling, whereas frequently used semiempirical methods (such as AM1 and PM3) produce unphysical results. The use of hydrogen atom for modeling of the cluster passivating ligands is found to yield unphysical results as well. Hence, the surface termination of II-VI semiconductor NCs with hydrogen atoms often used in computational models should probably be avoided. Basis set superposition error, zero-point energy, and thermal corrections, as well as solvent effects simulated with polarized continuum model are found to produce minor variations on the ligand binding energies. The effects of Cd-Se complex structure on both the electronic band gap (highest occupied molecular orbital-lowest unoccupied molecular orbital energy difference) and ligand binding

  5. How Does a SILAR CdSe Film Grow? Tuning the Deposition Steps to Suppress Interfacial Charge Recombination in Solar Cells.

    Science.gov (United States)

    Becker, Matthew A; Radich, James G; Bunker, Bruce A; Kamat, Prashant V

    2014-05-01

    Successive ionic layer adsorption and reaction (SILAR) is a popular method of depositing the metal chalcogenide semiconductor layer on the mesoscopic metal oxide films for designing quantum-dot-sensitized solar cells (QDSSCs) or extremely thin absorber (ETA) solar cells. While this deposition method exhibits higher loading of the light-absorbing semiconductor layer than direct adsorption of presynthesized colloidal quantum dots, the chemical identity of these nanostructures and the evolution of interfacial structure are poorly understood. We have now analyzed step-by-step SILAR deposition of CdSe films on mesoscopic TiO2 nanoparticle films using X-ray absorption near-edge structure analysis and probed the interfacial structure of these films. The film characteristics interestingly show dependence on the order in which the Cd and Se are deposited, and the CdSe-TiO2 interface is affected only during the first few cycles of deposition. Development of a SeO2 passivation layer in the SILAR-prepared films to form a TiO2/SeO2/CdSe junction facilitates an increase in photocurrents and power conversion efficiencies of quantum dot solar cells when these films are integrated as photoanodes in a photoelectrochemical solar cell.

  6. Quantized evaporation from liquid helium

    Science.gov (United States)

    Baird, M. J.; Hope, F. R.; Wyatt, A. F. G.

    1983-07-01

    The atomic-level kinetics of evaporation from a liquid surface are investigated experimentally for the case of liquid He-4. A pulse of phonons was injected by a submerged thin-film heater into purified He-4 (cooled to less than about 0.1 K) and collimated into a beam directed at the liquid surface; the atoms liberated at the surface were detected by a bolometer. The energy of the incident phonon and the kinetic energy of the liberated atom were calculated by determining the group velocity (from the minimum time elapsed between the beginning of the heater pulse and the arrival of the leading edge of the signal) and combining it with neutron-measured excitation dispersion data. Measurements were also made with a mixture of He-3 and He-4. The results are shown to be in good agreement with theoretical predictions of the phonon-induced quantum evaporation of surface atoms: the energy of the phonon is divided between the kinetic energy of the liberated atom and the energy required to overcome the binding forces.

  7. Preparation of Nb thin films with bulk transition temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Peirce, L H [Florida State Univ., Tallahassee (USA). Dept. of Physics

    1984-08-01

    Thin films (1000-2000 A) of Nb were prepared with bulk transition temperatures (9.25 K) by evaporation from an electron gun. Necessary substrate temperatures, evaporation rates and H/sub 2/O pressures were determined.

  8. A novel fluorescent assay for edaravone with aqueous functional CdSe quantum dots

    Science.gov (United States)

    Liao, Ping; Yan, Zheng-Yu; Xu, Zhi-Ji; Sun, Xiao

    2009-06-01

    Aqueous thiol-capped CdSe QDs with a narrow, symmetric emission were prepared under a low temperature. Based on the fluorescence enhancement of thiol-stabilized CdSe quantum dots (QDs) caused by edaravone, a simple, rapid and specific quantitative method was proposed to the edaravone determination. The concentration dependence of fluorescence intensity followed the binding of edaravone to surface of the thiol-capped CdSe QDs was effectively described by a modified Langmuir-type binding isotherm. Factors affecting the fluorescence detection for edaravone with thiol-stabilized CdSe QDs were studied, such as the effect of pH, reaction time, the concentration of CdSe QDs and so on. Under the optimal conditions, the calibration plot of C/( I - I0) with concentration of edaravone was linear in the range of (1.45-17.42) μg/mL (0.008-0.1 μmol/L) with correlation coefficient of 0.998. The limit of detection (LOD) (3 σ/ κ) was 0.15 μg/mL (0.0009 μmol/mL). Possible interaction mechanism was discussed.

  9. CdSe Nanoparticles with Clean Surfaces: Gas Phase Synthesis and Optical Properties

    Directory of Open Access Journals (Sweden)

    Zhang Hongwei

    2015-01-01

    Full Text Available CdSe nanoparticles (NPs were generated in gas phase with a magnetron plasma gas aggregation cluster beam source. Coagulation-free CdSe nanocrystals with very clean particle surface and interface, as well as a fairly uniform spatial distribution were obtained. The deposited NPs have a good dispersity with a mean diameter of about 4.8nm. A strong photoluminescence band corresponding to the near- band-edge transition of the CdSe NPs was observed. The CdSe NP films show a significant photoconductance induced by laser irradiation. With an applied bias voltage of 10V, the photo- induced current can be as high as 0.4mA under 0.01mW/mm2 405nm laser illumination. Our approach offers an alternative method for CdSe NP synthesis, which has the advantages such as high purity, good process and product control, as well as mass production, as compared to the existing methods.

  10. Size-dependent structure of CdSe nanoclusters formed after ion implantation in MgO

    NARCIS (Netherlands)

    van Huis, MA; van Veen, A; Schut, H; Eijt, SWH; Kooi, BJ; De Hosson, JTM

    The band gap as well as the optical and structural properties of semiconductor CdSe nanoclusters change as a function of the nanocluster size. Embedded CdSe nanoclusters in MgO were created by means of sequential Cd and Se ion implantation followed by thermal annealing. Changes during annealing were

  11. Spin coating of an evaporating polymer solution

    KAUST Repository

    Münch, Andreas

    2011-01-01

    We consider a mathematical model of spin coating of a single polymer blended in a solvent. The model describes the one-dimensional development of a thin layer of the mixture as the layer thins due to flow created by a balance of viscous forces and centrifugal forces and evaporation of the solvent. In the model both the diffusivity of the solvent in the polymer and the viscosity of the mixture are very rapidly varying functions of the solvent mass fraction. Guided by numerical solutions an asymptotic analysis reveals a number of different possible behaviours of the thinning layer dependent on the nondimensional parameters describing the system. The main practical interest is in controlling the appearance and development of a "skin" on the polymer where the solvent concentration reduces rapidly on the outer surface leaving the bulk of the layer still with high concentrations of solvent. In practice, a fast and uniform drying of the film is required. The critical parameters controlling this behaviour are found to be the ratio of the diffusion to advection time scales ε, the ratio of the evaporation to advection time scales δ and the ratio of the diffusivity of the pure polymer and the initial mixture exp(-1/γ). In particular, our analysis shows that for very small evaporation with δ

  12. CAPSULE REPORT: EVAPORATION PROCESS

    Science.gov (United States)

    Evaporation has been an established technology in the metal finishing industry for many years. In this process, wastewaters containing reusable materials, such as copper, nickel, or chromium compounds are heated, producing a water vapor that is continuously removed and condensed....

  13. Boilers, evaporators, and condensers

    International Nuclear Information System (INIS)

    Kakac, S.

    1991-01-01

    This book reports on the boilers, evaporators and condensers that are used in power plants including nuclear power plants. Topics included are forced convection for single-phase side heat exchangers, heat exchanger fouling, industrial heat exchanger design, fossil-fuel-fired boilers, once through boilers, thermodynamic designs of fossil fuel-first boilers, evaporators and condensers in refrigeration and air conditioning systems (with respect to reducing CFC's) and nuclear steam generators

  14. Electronic structures and magnetism for carbon doped CdSe: Modified Becke–Johnson density functional calculations

    Energy Technology Data Exchange (ETDEWEB)

    Fan, S.W., E-mail: fansw1129@126.com; Song, T.; Huang, X.N.; Yang, L.; Ding, L.J.; Pan, L.Q.

    2016-09-15

    Utilizing the full potential linearized augment plane wave method, the electronic structures and magnetism for carbon doped CdSe are investigated. Calculations show carbon substituting selenium could induce CdSe to be a diluted magnetic semiconductor. Single carbon dopant could induce 2.00 μ{sub B} magnetic moment. Electronic structures show the long-range ferromagnetic coupling mainly originates from the p–d exchange-like p–p coupling interaction. Positive chemical pair interactions indicate carbon dopants would form homogeneous distribution in CdSe host. The formation energy implies the non-equilibrium fabricated technology is necessary during the samples fabricated. - Highlights: • The C{sub Se} defects could induce the CdSe to be typical diluted magnetic semiconductor. • Electronic structures show ferromagnetism come from p-d exchange-like p-p coupling. • Chemical pair interactions indicate C{sub Se} prefer homogenous distribution in CdSe host.

  15. Exciton fine structure in CdSe nanoclusters

    International Nuclear Information System (INIS)

    Leung, K.; Pokrant, S.; Whaley, K.B.

    1998-01-01

    The fine structure in the CdSe nanocrystal absorption spectrum is computed by incorporating two-particle electron-hole interactions and spin-orbit coupling into a tight-binding model, with an expansion in electron-hole single-particle states. The exchange interaction and spin-orbit coupling give rise to dark, low-lying states that are predominantly triplet in character, as well as to a manifold of exciton states that are sensitive to the nanocrystal shape. Near the band gap, the exciton degeneracies are in qualitative agreement with the effective mass approximation (EMA). However, instead of the infinite lifetimes for dark states characteristic of the EMA, we obtain finite radiative lifetimes for the dark states. In particular, for the lowest, predominantly triplet, states we obtain radiative lifetimes of microseconds, in qualitative agreement with the experimental measured lifetimes. The resonant Stokes shifts obtained from the splitting between the lowest dark and bright states are also in good agreement with experimental values for larger crystallites. Higher-lying states exhibit significantly more complex behavior than predicted by EMA, due to extensive mixing of electron-hole pair states. copyright 1998 The American Physical Society

  16. X-ray investigation of CdSe nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Kurtulus, Oezguel [Physics Division, Dogus University, Istanbul (Turkey); Li, Zhen [Australian Institute for Bioengineering and Nanotechnology, University of Queensland, Brisbane (Australia); Mews, Alf [Physical Chemistry, University of Hamburg, Hamburg (Germany); Pietsch, Ullrich [Department of Physics, University of Siegen, Siegen (Germany)

    2009-08-15

    CdSe nanowires (NWs) have been prepared by a solution-liquid-solid (SLS) approach using Bi nanocatalysts. Structural characterization has been performed by X-ray powder diffraction providing an admixture of wurtzite and zinc-blende (ZB) structure units separated by different types of stacking faults. The relative contributions of ZB type stacking units within the NWs were determined to be in the order of 3-6% from a set of ratios of reflection intensities appearing in only wurtzite structure to those appearing in both ZB and wurtzite (W) structure. In addition, the anisotropy of domain size within the NWs was evaluated from the evolution of peak broadening for increasing scattering length. The coherence lengths along the growth direction are found to be changing between 16 and 21 nm, smaller than the results obtained from TEM measurement, while the NW diameters are determined to be between 5 and 8 nm which is in good agreement with TEM inspection. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  17. Flexible, Photopatterned, Colloidal CdSe Semiconductor Nanocrystal Integrated Circuits

    Science.gov (United States)

    Stinner, F. Scott

    As semiconductor manufacturing pushes towards smaller and faster transistors, a parallel goal exists to create transistors which are not nearly as small. These transistors are not intended to match the performance of traditional crystalline semiconductors; they are designed to be significantly lower in cost and manufactured using methods that can make them physically flexible for applications where form is more important than speed. One of the developing technologies for this application is semiconductor nanocrystals. We first explore methods to develop CdSe nanocrystal semiconducting "inks" into large-scale, high-speed integrated circuits. We demonstrate photopatterned transistors with mobilities of 10 cm2/Vs on Kapton substrates. We develop new methods for vertical interconnect access holes to demonstrate multi-device integrated circuits including inverting amplifiers with 7 kHz bandwidths, ring oscillators with NFC) link. The device draws its power from the NFC transmitter common on smartphones and eliminates the need for a fixed battery. This allows for the mass deployment of flexible, interactive displays on product packaging.

  18. Stability studies of CdSe nanocrystals in an aqueous environment

    Energy Technology Data Exchange (ETDEWEB)

    Xi Lifei; Lek, Jun Yan; Liang, Yen Nan; Zhou Wenwen; Yan Qingyu; Hu Xiao; Chiang, Freddy Boey Yin; Lam, Yeng Ming [School of Materials Science and Engineering, Nanyang Technological University, Nanyang Avenue, 639798 (Singapore); Boothroyd, Chris, E-mail: ymlam@ntu.edu.sg [Center for Electron Nanoscopy, Technical University of Denmark, DK-2800 Kongens Lyngby (Denmark)

    2011-07-08

    In this paper, CdSe nanocrystal dissolution in an aqueous solution was studied. It was found that light is a key factor affecting the dissolution of nanocrystals. In the presence of light, the electrons generated from CdSe nanocrystals reduce water to hydrogen and hydroxide ions (OH{sup -}) while photo-generated holes oxidize CdSe to Cd{sup 2+} and elemental Se. The dissolution was accelerated in an acidic medium while moderate alkalinity (pH = 10.3) can slow down the dissolution possibly due to precipitation of nanocrystals. This study has strong implications for the use of these crystals in aqueous environments (bioimaging and dye-sensitized solar cells).

  19. Fabrication of CdSe nanocrystals using porous anodic alumina and their optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Laatar, Fakher, E-mail: fakher8laatar@gmail.com [Laboratory of Semiconductors, Nanostructures and Advanced Technology (LSNTA), Center for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Science faculty of Bizerte–Carthage University (Tunisia); Hassen, Mohamed [Laboratory of Semiconductors, Nanostructures and Advanced Technology (LSNTA), Center for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Higher Institute of Applied Science and Technology of Sousse, City Taffala (Ibn Khaldun), 4003 Sousse (Tunisia); Amri, Chohdi [Laboratory of Semiconductors, Nanostructures and Advanced Technology (LSNTA), Center for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Laatar, Fekri [Laboratory of Physical Chemistry of Minerals and Materials Applications, National Research Center for Materials Science, Technopole Borj Cedria (Tunisia); Smida, Alia; Ezzaouia, Hatem [Laboratory of Semiconductors, Nanostructures and Advanced Technology (LSNTA), Center for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia)

    2016-10-15

    In this paper, Porous anodic alumina (PAA) template with highly ordered nanopores structure was synthesized on aluminum foils by two step anodization process. PAA template has hexagonal pores with average size between 30 and 180 nm. L-cysteine (L-Cys) functionalized cadmium selenide nanocrystals (CdSe NCs) were successfully embedded inside PAA layers by simple immersion in aqueous solution. The effect of pore diameter enlargement on the microstructure of CdSe NCs/PAA films was systematically studied by FE-SEM, XRD, EDX, Raman, UV–VIS absorbance and PL analysis. FE-SEM microscopy was used to investigate the surface morphology of PAA templates before and after CdSe NCs deposition. XRD investigation demonstrates that CdSe NCs into PAA templates were cubic in nature with zinc-blende structure. Raman measurements exhibit the characteristic modes of CdSe on the PAA layers as well as the films crystallinity as function of widening pores diameter. Optical properties of deposited CdSe NCs on PAA templates have been investigated using optical absorption and PL techniques. Photoluminescence spectroscopy has been used to determine the bandgap energy and the average size of CdSe NCs deposited on PAA layer. This method involves fitting the experimental spectra, using a model based on quantum confinement of electrons in CdSe nanocrystals having spherical and cylindrical forms (Quantum Dots (QDs) and Quantum Wires (QWs)). This model allows correlation between the PL spectra and the microstructure of the CdSe/PAA. Both photoluminescence and optical absorption show that the PL peak energy and the optical absorption edge of CdSe NCs/PAA exhibit similar behavior with changes in nanostructure size. The spectral behaviors of optical absorption and PL are consistent with a quantum confinement model throughout the sizes and shapes of the CdSe nanocrystals of the luminescent films. The effective bandgap energies determined from the PL peaks position are in good agreement with those

  20. Fabrication of CdSe nanocrystals using porous anodic alumina and their optical properties

    International Nuclear Information System (INIS)

    Laatar, Fakher; Hassen, Mohamed; Amri, Chohdi; Laatar, Fekri; Smida, Alia; Ezzaouia, Hatem

    2016-01-01

    In this paper, Porous anodic alumina (PAA) template with highly ordered nanopores structure was synthesized on aluminum foils by two step anodization process. PAA template has hexagonal pores with average size between 30 and 180 nm. L-cysteine (L-Cys) functionalized cadmium selenide nanocrystals (CdSe NCs) were successfully embedded inside PAA layers by simple immersion in aqueous solution. The effect of pore diameter enlargement on the microstructure of CdSe NCs/PAA films was systematically studied by FE-SEM, XRD, EDX, Raman, UV–VIS absorbance and PL analysis. FE-SEM microscopy was used to investigate the surface morphology of PAA templates before and after CdSe NCs deposition. XRD investigation demonstrates that CdSe NCs into PAA templates were cubic in nature with zinc-blende structure. Raman measurements exhibit the characteristic modes of CdSe on the PAA layers as well as the films crystallinity as function of widening pores diameter. Optical properties of deposited CdSe NCs on PAA templates have been investigated using optical absorption and PL techniques. Photoluminescence spectroscopy has been used to determine the bandgap energy and the average size of CdSe NCs deposited on PAA layer. This method involves fitting the experimental spectra, using a model based on quantum confinement of electrons in CdSe nanocrystals having spherical and cylindrical forms (Quantum Dots (QDs) and Quantum Wires (QWs)). This model allows correlation between the PL spectra and the microstructure of the CdSe/PAA. Both photoluminescence and optical absorption show that the PL peak energy and the optical absorption edge of CdSe NCs/PAA exhibit similar behavior with changes in nanostructure size. The spectral behaviors of optical absorption and PL are consistent with a quantum confinement model throughout the sizes and shapes of the CdSe nanocrystals of the luminescent films. The effective bandgap energies determined from the PL peaks position are in good agreement with those

  1. Evaporation-driven instability of the precorneal tear film.

    Science.gov (United States)

    Peng, Cheng-Chun; Cerretani, Colin; Braun, Richard J; Radke, C J

    2014-04-01

    Tear-film instability is widely believed to be a signature of eye health. When an interblink is prolonged, randomly distributed ruptures occur in the tear film. "Black spots" and/or "black streaks" appear in 15 to 40 s for normal individuals. For people who suffer from dry eye, tear-film breakup time (BUT) is typically less than a few seconds. To date, however, there is no satisfactory quantitative explanation for the origin of tear rupture. Recently, it was proposed that tear-film breakup is related to locally high evaporative thinning. A spatial variation in the thickness of the tear-film lipid layer (TFLL) may lead to locally elevated evaporation and subsequent tear-film breakup. We examine the local-evaporation-driven tear-film-rupture hypothesis in a one-dimensional (1-D) model for the evolution of a thin aqueous tear film overriding the cornea subject to locally elevated evaporation at its anterior surface and osmotic water influx at its posterior surface. Evaporation rate depends on mass transfer both through the coating lipid layer and through ambient air. We establish that evaporation-driven tear-film breakup can occur under normal conditions but only for higher aqueous evaporation rates. Predicted roles of environmental conditions, such as wind speed and relative humidity, on tear-film stability agree with clinical observations. More importantly, locally elevated evaporation leads to hyperosmolar spots in the tear film and, hence, vulnerability to epithelial irritation. In addition to evaporation rate, tear-film instability depends on the strength of healing flow from the neighboring region outside the breakup region, which is determined by the surface tension at the tear-film surface and by the repulsive thin-film disjoining pressure. This study provides a physically consistent and quantitative explanation for the formation of black streaks and spots in the human tear film during an interblink. Copyright © 2013 Elsevier B.V. All rights reserved.

  2. Evaporation in hydrology and meteorology

    NARCIS (Netherlands)

    Brandsma, T.

    1990-01-01

    In this paper the role of evaporation in hydrology and meteorology is discussed, with the emphasis on hydrology. The basic theory of evaporation is given and methods to determine evaporation are presented. Some applications of evaporation studies in literature are given in order to illustrate the

  3. Optical absorption of CdSe quantum dots on electrodes with different morphology

    Directory of Open Access Journals (Sweden)

    Witoon Yindeesuk

    2013-10-01

    Full Text Available We have studied the optical absorption of CdSe quantum dots (QDs adsorbed on inverse opal TiO2 (IO-TiO2 and nanoparticulate TiO2 (NP-TiO2 electrodes using photoacoustic (PA measurements. The CdSe QDs were grown directly on IO-TiO2 and NP-TiO2 electrodes by a successive ionic layer adsorption and reaction (SILAR method with different numbers of cycles. The average diameter of the QDs was estimated by applying an effective mass approximation to the PA spectra. The increasing size of the QDs with increasing number of cycles was confirmed by a redshift in the optical absorption spectrum. The average diameter of the CdSe QDs on the IO-TiO2 electrodes was similar to that on the NP-TiO2 ones, indicating that growth is independent of morphology. However, there were more CdSe QDs on the NP-TiO2 electrodes than on the IO-TiO2 ones, indicating that there were different amounts of active sites on each type of electrode. In addition, the Urbach parameter of the exponential optical absorption tail was also estimated from the PA spectrum. The Urbach parameter of CdSe QDs on IO-TiO2 electrodes was higher than that on NP-TiO2 ones, indicating that CdSe QDs on IO-TiO2 electrodes are more disordered states than those on NP-TiO2 electrodes. The Urbach parameter decreases in both cases with the increase of SILAR cycles, and it tended to move toward a constant value.

  4. Scanning tunneling spectroscopy of CdSe nanocrystals covalently bound to GaAs

    DEFF Research Database (Denmark)

    Walzer, K.; Marx, E.; Greenham, N.C.

    2003-01-01

    We present scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) measurements of CdSe nanocrystals covalently attached to doped GaAs substrates using monolayers of 1,6-hexanedithiol. STM measurements showed the formation of stable, densely packed, homogeneous monolayers...... of nanocrystals. STS measurements showed rectifying behaviour, with high currents at the opposite sample bias to that previously observed for CdSe nanocrystals adsorbed on Si substrates. We explain the rectifying behaviour by considering the interaction between the electronic states of the nanocrystals...

  5. The effect of Pb addition on the morphology of CdSe quantum dot

    Science.gov (United States)

    Kim, Young-Kuk; Cho, Young-Sang; Chung, Kookchae; Choi, Chul-Jin

    2010-08-01

    CdSe quantum dots had been synthesized with a hot injection method. It was shown that the addition of Pb ions in the initial precursor solution changed the morphology of CdSe nanocrystals from slightly prolate ellipsoid to branched rod. Photoluminescence (PL) of the branched nanocrystals showed rapid depression of emission intensity due to the morphological development to the branched nanocrystal induced by Pb addition. Low temperature PL spectrum indicated that the surface recombination of charge carrier resulted in the large depression of emission from the branched nanocrystal.

  6. Thin-Film Materials Synthesis and Processing Facility

    Data.gov (United States)

    Federal Laboratory Consortium — FUNCTION: Provides a wide capability for deposition and processing of thin films, including sputter and ion-beam deposition, thermal evaporation, electro-deposition,...

  7. Modeling black hole evaporation

    CERN Document Server

    Fabbri, Alessandro

    2005-01-01

    The scope of this book is two-fold: the first part gives a fully detailed and pedagogical presentation of the Hawking effect and its physical implications, and the second discusses the backreaction problem, especially in connection with exactly solvable semiclassical models that describe analytically the black hole evaporation process. The book aims to establish a link between the general relativistic viewpoint on black hole evaporation and the new CFT-type approaches to the subject. The detailed discussion on backreaction effects is also extremely valuable.

  8. Systematics of evaporation

    International Nuclear Information System (INIS)

    Klots, C.E.

    1991-01-01

    Beginning with rather basic principles, general relations are obtained for evaporative rate constants. These are established both as a function of energy and of temperature. In parallel with this, expressions are developed for the kinetic energy distribution of the separating species. Explicit evaluation of the rate constants in the case of 'chemical' evaporation from an entity containing n monomeric units yields as a typical result k(T)(s -1 )=3.10 13 n 2/3 exp[6/n 1/3 ]exp(-ΔE a (n)/k B T). Experimental evidence in support of this relation is cited. Applications to thermionic emission are also noted. (orig.)

  9. CdSe nanorod/TiO2 nanoparticle heterojunctions with enhanced solar- and visible-light photocatalytic activity

    Directory of Open Access Journals (Sweden)

    Fakher Laatar

    2017-12-01

    Full Text Available CdSe nanorods (NRs with an average length of ≈120 nm were prepared by a solvothermal process and associated to TiO2 nanoparticles (Aeroxide® P25 by annealing at 300 °C for 1 h. The content of CdSe NRs in CdSe/TiO2 composites was varied from 0.5 to 5 wt %. The CdSe/TiO2 heterostructured materials were characterized by XRD, TEM, SEM, XPS, UV–visible spectroscopy and Raman spectroscopy. TEM images and XRD patterns show that CdSe NRs with wurtzite structure are associated to TiO2 particles. The UV–visible spectra demonstrate that the narrow bandgap of CdSe NRs serves to increase the photoresponse of CdSe/TiO2 composites until ≈725 nm. The CdSe (2 wt %/TiO2 composite exhibits the highest photocatalytic activity for the degradation of rhodamine B in aqueous solution under simulated sunlight or visible light irradiation. The enhancement in photocatalytic activity likely originates from CdSe sensitization of TiO2 and the heterojunction between these materials which facilitates electron transfer from CdSe to TiO2. Due to its high stability (up to ten reuses without any significant loss in activity, the CdSe/TiO2 heterostructured catalysts show high potential for real water decontamination.

  10. Evaporation thermal anslysis of Swallow-tailed Axial-grooved Heat Pipe

    Science.gov (United States)

    Zhang, Renping

    2018-03-01

    A detailed mathematical model that describes evaporating characteristics through thin liquid film at the evaporator section of swallow-tailed axial-grooved heat pipe was developed. The numerical simulation results about thin film profile, liquid-vapour interface temperature, evaporating rate and heat flux at the evaporating thin film region were given by the current investigation and the effect of superheat on the liquid-vapour interface temperature, evaporating mass rate and heat flux was discussed. Meanwhile, thermal model of the meniscus region at the evaporating section was developed to calculate the rate of heat transfer. The ratio of the heat conduction in the evaporating thin liquid film region and total heat rate were also discussed. It is indicated that the thickness of thin liquid film rises in a nearly linear fashion. The disjoining pressure can be neglected with increasing the liquid film thickness, tends to be negligibly small. The heat transfer rate at the intrinsic meniscus cannot be compared with that of the evaporating liquid film region.

  11. Chemical substitution of Cd ions by Hg in CdSe nanorods and nanodots: Spectroscopic and structural examination

    International Nuclear Information System (INIS)

    Prudnikau, Anatol; Artemyev, Mikhail; Molinari, Michael; Troyon, Michel; Sukhanova, Alyona; Nabiev, Igor; Baranov, Alexandr V.; Cherevkov, Sergey A.; Fedorov, Anatoly V.

    2012-01-01

    Highlights: ► We studied cadmium-by-mercury chemical substitution in CdSe nanocrystals. ► Zinc blende CdSe quantum dots can be easily converted to isostructural Cd x Hg 1−x Se. ► Wurtzite CdSe QDs require longer time to convert to a zinc blende Cd x Hg 1−x Se. ► Wurtzite CdSe nanorods transform to nanoheterogeneous luminescent Cd x Hg 1−x Se rods. - Abstract: The chemical substitution of cadmium by mercury in colloidal CdSe quantum dots (QDs) and nanorods has been examined by absorption, photoluminescence and Raman spectroscopy. The crystalline structure of original CdSe QDs used for Cd/Hg substitution (zinc blende versus wurtzite) shows a strong impact on the optical and structural properties of resultant Cd x Hg 1−x Se nanocrystals. Substitution of Cd by Hg in isostructural zinc blende CdSe QDs converts them to ternary Cd x Hg 1−x Se zinc blende nanocrystals with significant NIR emission. Whereas, the wurtzite CdSe QDs transformed first to ternary nanocrystals with almost no emission followed by slow structural reorganization to a NIR-emitting zinc blende Cd x Hg 1−x Se QDs. CdSe nanorods with intrinsic wurtzite structure show unexpectedly intense NIR emission even at early Cd/Hg substitution stage with PL active zinc blende Cd x Hg 1−x Se regions.

  12. Evaporative Lithography in Open Microfluidic Channel Networks

    KAUST Repository

    Lone, Saifullah

    2017-02-24

    We demonstrate a direct capillary-driven method based on wetting and evaporation of various suspensions to fabricate regular two-dimensional wires in an open microfluidic channel through continuous deposition of micro- or nanoparticles under evaporative lithography, akin to the coffee-ring effect. The suspension is gently placed in a loading reservoir connected to the main open microchannel groove on a PDMS substrate. Hydrophilic conditions ensure rapid spreading of the suspension from the loading reservoir to fill the entire channel length. Evaporation during the spreading and after the channel is full increases the particle concentration toward the end of the channel. This evaporation-induced convective transport brings particles from the loading reservoir toward the channel end where this flow deposits a continuous multilayered particle structure. The particle deposition front propagates backward over the entire channel length. The final dry deposit of the particles is thereby much thicker than the initial volume fraction of the suspension. The deposition depth is characterized using a 3D imaging profiler, whereas the deposition topography is revealed using a scanning electron microscope. The patterning technology described here is robust and passive and hence operates without an external field. This work may well become a launching pad to construct low-cost and large-scale thin optoelectronic films with variable thicknesses and interspacing distances.

  13. Performance of evaporative condensers

    Energy Technology Data Exchange (ETDEWEB)

    Ettouney, Hisham M.; El-Dessouky, Hisham T.; Bouhamra, Walid; Al-Azmi, Bader

    2001-07-01

    Experimental investigation is conducted to study the performance of evaporative condensers/coolers. The analysis includes development of correlations for the external heat transfer coefficient and the system efficiency. The evaporative condenser includes two finned-tube heat exchangers. The system is designed to allow for operation of a single condenser, two condensers in parallel, and two condensers in series. The analysis is performed as a function of the water-to-air mass flow rate ratio (L/G) and the steam temperature. Also, comparison is made between the performance of the evaporative condenser and same device as an air-cooled condenser. Analysis of the collected data shows that the system efficiency increases at lower L/G ratios and higher steam temperatures. The system efficiency for various configurations for the evaporative condenser varies between 97% and 99%. Lower efficiencies are obtained for the air-cooled condenser, with values between 88% and 92%. The highest efficiency is found for the two condensers in series, followed by two condensers in parallel and then the single condenser. The parallel condenser configuration can handle a larger amount of inlet steam and can provide the required system efficiency and degree of subcooling. The correlation for the system efficiency gives a simple tool for preliminary system design. The correlation developed for the external heat transfer coefficient is found to be consistent with the available literature data. (Author)

  14. A Biphasic Ligand Exchange Reaction on Cdse Nanoparticles: Introducing Undergraduates to Functionalizing Nanoparticles for Solar Cells

    Science.gov (United States)

    Zemke, Jennifer M.; Franz, Justin

    2016-01-01

    Semiconductor nanoparticles, including cadmium selenide (CdSe) particles, are attractive as light harvesting materials for solar cells. In the undergraduate laboratory, the size-tunable optical and electronic properties can be easily investigated; however, these nanoparticles (NPs) offer another platform for application-based tunability--the NP…

  15. Fabrication of CdSe quantum dots/permutite luminescent materials

    Indian Academy of Sciences (India)

    Administrator

    tosuccinic acid-capped CdSe quantum dots (QDs) were prepared in aqueous solution by using SeO2 as selenium source and NaBH4 as reductant. Secondly, the commercial permutite was treated with acetic acid to induce a partial dealumnization, which can introduce a large number of intracrystal mesopores, and the.

  16. Photoluminescence of patterned CdSe quantum dot for anti-counterfeiting label on paper

    International Nuclear Information System (INIS)

    Isnaeni,; Yulianto, Nursidik; Suliyanti, Maria Margaretha

    2016-01-01

    We successfully developed a method utilizing colloidal CdSe nanocrystalline quantum dot for anti-counterfeiting label on a piece of glossy paper. We deposited numbers and lines patterns of toluene soluble CdSe quantum dot using rubber stamper on a glossy paper. The width of line pattern was about 1-2 mm with 1-2 mm separation between lines. It required less than one minute for deposited CdSe quantum dot on glossy paper to dry and become invisible by naked eyes. However, patterned quantum dot become visible using long-pass filter glasses upon excitation of UV lamp or blue laser. We characterized photoluminescence of line patterns of quantum dot, and we found that emission boundaries of line patterns were clearly observed. The error of line size and shape were mainly due to defect of the original stamper. The emission peak wavelength of CdSe quantum dot was 629 nm. The emission spectrum of deposited quantum dot has full width at half maximum (FWHM) of 30-40 nm. The spectra similarity between deposited quantum dot and the original quantum dot in solution proved that our stamping method can be simply applied on glossy paper without changing basic optical property of the quantum dot. Further development of this technique is potential for anti-counterfeiting label on very important documents or objects.

  17. Photoluminescence of patterned CdSe quantum dot for anti-counterfeiting label on paper

    Energy Technology Data Exchange (ETDEWEB)

    Isnaeni,, E-mail: isnaeni@lipi.go.id; Yulianto, Nursidik; Suliyanti, Maria Margaretha [Research Center for Physics, Indonesian Institute of Sciences, Building 442, Kawasan Puspiptek, South Tangerang,Banten 15314 Indonesia (Indonesia)

    2016-03-11

    We successfully developed a method utilizing colloidal CdSe nanocrystalline quantum dot for anti-counterfeiting label on a piece of glossy paper. We deposited numbers and lines patterns of toluene soluble CdSe quantum dot using rubber stamper on a glossy paper. The width of line pattern was about 1-2 mm with 1-2 mm separation between lines. It required less than one minute for deposited CdSe quantum dot on glossy paper to dry and become invisible by naked eyes. However, patterned quantum dot become visible using long-pass filter glasses upon excitation of UV lamp or blue laser. We characterized photoluminescence of line patterns of quantum dot, and we found that emission boundaries of line patterns were clearly observed. The error of line size and shape were mainly due to defect of the original stamper. The emission peak wavelength of CdSe quantum dot was 629 nm. The emission spectrum of deposited quantum dot has full width at half maximum (FWHM) of 30-40 nm. The spectra similarity between deposited quantum dot and the original quantum dot in solution proved that our stamping method can be simply applied on glossy paper without changing basic optical property of the quantum dot. Further development of this technique is potential for anti-counterfeiting label on very important documents or objects.

  18. Direct Observation of Electron-to-Hole Energy Transfer in CdSe Quantum Dots

    NARCIS (Netherlands)

    Hendry, E.; Koeberg, M.; Wang, F.; Zhang, H.; de Mello Donega, C.; Vanmaekelbergh, D.; Bonn, M.

    2006-01-01

    We independently determine the subpicosecond cooling rates for holes and electrons in CdSe quantum dots. Time-resolved luminescence and terahertz spectroscopy reveal that the rate of hole cooling, following photoexcitation of the quantum dots, depends critically on the electron excess energy. This

  19. Rapid synthesis of CdSe nanocrystals in aqueous solution at room ...

    Indian Academy of Sciences (India)

    Administrator

    Water-soluble thioglycolic acid-capped CdSe nanocrystals (NCs) were prepared in aqueous solu- tion at room temperature. We investigated the ... NCs dispersed in buffer solution (pH = 4⋅0). FTIR spectra were recorded on a ... the theory of acid-base equilibrium, the initial pH value of original solution determines the ...

  20. Temporary Charge Carrier Separation Dominates the Photoluminescence Decay Dynamics of Colloidal CdSe Nanoplatelets

    NARCIS (Netherlands)

    Rabouw, F.T.; van der Bok, J.C.; Spinicelli, Piernicola; Mahler, B.; Nasilowski, M.; Pedetti, S.; Dubertret, B.; Vanmaekelbergh, Daniel

    2016-01-01

    Luminescent colloidal CdSe nanoplatelets with atomically defined thicknesses have recently been developed, and their potential for various applications has been shown. To understand their special properties, experiments have until now focused on the relatively short time scales of at most a few

  1. Forest evaporation models: Relationships between stand growth and evaporation

    CSIR Research Space (South Africa)

    Le Maitre, David C

    1997-06-01

    Full Text Available The relationships between forest stand structure, growth and evaporation were analysed to determine whether forest evaporation can be estimated from stand growth data. This approach permits rapid assessment of the potential impacts of afforestation...

  2. Convection-enhanced water evaporation

    OpenAIRE

    B. M. Weon; J. H. Je; C. Poulard

    2011-01-01

    Water vapor is lighter than air; this can enhance water evaporation by triggering vapor convection but there is little evidence. We directly visualize evaporation of nanoliter (2 to 700 nL) water droplets resting on silicon wafer in calm air using a high-resolution dual X-ray imaging method. Temporal evolutions of contact radius and contact angle reveal that evaporation rate linearly changes with surface area, indicating convective (instead of diffusive) evaporation in nanoliter water droplet...

  3. White light emission from organic-inorganic hererostructure devices by using CdSe quantum dots as emitting layer

    International Nuclear Information System (INIS)

    Tang Aiwei; Teng Feng; Gao Yinhao; Li Dan; Zhao Suling; Liang Chunjun; Wang Yongsheng

    2007-01-01

    In this paper, white light emission was obtained from organic-inorganic heterostructure devices by using CdSe quantum dots as emitting layer, in which CdSe quantum dots were synthesized via a colloidal chemical approach by using CdO and Se powder as precursors. Photoluminescence of CdSe quantum dots demonstrated a white emission with a full wavelength at half maximum (FWHM) of about 200 nm under ambient conditions, and the white emission could be observed in both multilayer device ITO/PEDOT:PSS/CdSe/BCP/Alq 3 /Al and single-layer device: ITO/PEDOT:PSS/CdSe/Al. The broad emission was attributed to the inhomogeneous broadening. The CIE coordinates of the multilayer device were x=0.35 and y=0.40. The white-light-emitting diodes with CdSe quantum dots as the emitting layer are potentially useful in lighting applications

  4. CdSe quantum dots co-sensitized TiO2 photoelectrodes: particle size dependent properties

    International Nuclear Information System (INIS)

    Prabakar, K; Minkyu, S; Inyoung, S; Heeje, K

    2010-01-01

    Cadmium selenide (CdSe) quantum dots (QDs) with different particle sizes have been used as an inorganic co-sensitizer in addition to organic dye for large band gap mesoporous TiO 2 dye sensitized solar cells. The QDs co-sensitized solar cells exhibited overall highest conversion efficiency of 3.65% at 1 sun irradiation for 3.3 nm particle size corresponding to a visible light absorption wavelength of 528 nm. The photovoltaic characteristics of CdSe QDs co-sensitized cells depend on the particle sizes rather than broad spectral light absorption as compared with CdSe QDs alone sensitized and standard dye-sensitized solar cells. Correlation between CdSe QDs adsorption on mesoporous TiO 2 surfaces and photoelectron injection into TiO 2 has been demonstrated. (fast track communication)

  5. Quantitative size-dependent structure and strain determination of CdSe nanoparticles using atomic pair distribution function analysis

    Energy Technology Data Exchange (ETDEWEB)

    Masadeh, A S; Bozin, E S; Farrow, C L; Paglia, G; Juhas, P; Billinge, S J. L.; Karkamkar, A; Kanatzidis, M G [Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824-1116 (United States); Department of Chemistry, Michigan State University, East Lansing, Michigan 48824-1116 (United States)

    2007-09-15

    The size-dependent structure of CdSe nanoparticles, with diameters ranging from 2 to 4 nm, has been studied using the atomic pair distribution function (PDF) method. The core structure of the measured CdSe nanoparticles can be described in terms of the wurtzite atomic structure with extensive stacking faults. The density of faults in the nanoparticles is {approx}50%. The diameter of the core region was extracted directly from the PDF data and is in good agreement with the diameter obtained from standard characterization methods, suggesting that there is little surface amorphous region. A compressive strain was measured in the Cd-Se bond length that increases with decreasing particle size being 0.5% with respect to bulk CdSe for the 2 nm diameter particles. This study demonstrates the size-dependent quantitative structural information that can be obtained even from very small nanoparticles using the PDF approach.

  6. Diffusion and evaporation of a liquid droplet

    Science.gov (United States)

    Shukla, K. N.

    1980-06-01

    The process of evaporation and diffusion of a spherical liquid droplet in an atmosphere of noncondensable gas is studied theoretically. An equation for the shrinkage of the radius of the droplet is derived on the basis of continuity and momentum equations. Further, a conjugate problem consisting of the energy and mass balance for the gaseous environment is formulated. An approximation of thin thermal and diffusion boundary-layers is introduced to simplify the analysis. Results are presented for methanol-nitrogen, ammonia-nitrogen, and sodium-argon systems. It has been observed that the droplet of highly viscous fluid exhibits rapid contraction.

  7. Active control of evaporative solution deposition by means of modulated gas phase convection

    NARCIS (Netherlands)

    Wedershoven, H.M.J.M.; Deuss, K.R.M.; Fantin, C.; Zeegers, J.C.H.; Darhuber, A.A.

    2018-01-01

    In solution processing, functional materials are dissolved or dispersed in a solvent and deposited typically as a thin liquid film on a substrate. After evaporation of the solvent, a dry layer remains. We propose an ‘active’, non-contact technique for evaporative pattern formation that does not

  8. Probing the interaction of flower-like CdSe nanostructure particles targeted to bovine serum albumin using spectroscopic techniques

    International Nuclear Information System (INIS)

    Ju Peng; Fan Hai; Liu Tao; Cui Lin; Ai Shiyun

    2011-01-01

    The interaction between flower-like CdSe nanostructure particles (CdSe NP) and bovine serum albumin (BSA) was investigated from a spectroscopic angle under simulative physiological conditions. Under pH 7.4, CdSe NP could effectively quench the intrinsic fluorescence of BSA via static quenching. The binding constant (K A ) was 6.38, 3.27, and 1.90x10 4 M -1 at 298, 304, and 310 K, respectively and the number of binding sites was 1.20. According to the Van't Hoff equation, the thermodynamic parameters (ΔH o =-77.48 kJ mol -1 , ΔS o =-168.17 J mol -1 K -1 ) indicated that hydrogen bonds and van der Waals forces played a major role in stabilizing the BSA-CdSe complex. Besides, UV-vis and circular dichroism (CD) results showed that the addition of CdSe NP changed the secondary structure of BSA and led to a decrease in α-helix. These results suggested that BSA underwent substantial conformational changes induced by flower-like CdSe nanostructure particles. - Highlights: → Estimate the binding of flower-like CdSe NP to BSA by spectroscopic methods. → Hydrogen bonds and van der Waals forces were the major forces. →Addition of CdSe changed the micro-environmentl of BSA. → Decrease in α-helix of BSA secondary structure induced by CdSe.

  9. Effect of ligand self-assembly on nanostructure and carrier transport behaviour in CdSe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Li, Kuiying, E-mail: kuiyingli@ysu.edu.cn; Xue, Zhenjie

    2014-11-14

    Adjustment of the nanostructure and carrier behaviour of CdSe quantum dots (QDs) by varying the ligands used during QD synthesis enables the design of specific quantum devices via a self-assembly process of the QD core–shell structure without additional technologies. Surface photovoltaic (SPV) technology supplemented by X-ray diffractometry and infrared absorption spectroscopy were used to probe the characteristics of these QDs. Our study reveals that while CdSe QDs synthesized in the presence of and capped by thioglycolic acid, 3-mercaptopropionic acid, mercaptoethanol or α-thioglycerol ligands display zinc blende nanocrystalline structures, CdSe QDs modified by L-cysteine possess wurtzite nanocrystalline structures, because different end groups in these ligands induce distinctive nucleation and growth mechanisms. Carboxyl end groups in the ligand served to increase the SPV response of the QDs, when illuminated by hν ≥ E{sub g,nano-CdSe}. Increased length of the alkyl chains and side-chain radicals in the ligands partially inhibit photo-generated free charge carrier (FCC) transfer transitions of CdSe QDs illuminated by photon energy of 4.13 to 2.14 eV. The terminal hydroxyl group might better accommodate energy released in the non-radiative de-excitation process of photo-generated FCCs in the ligand's lowest unoccupied molecular orbital in the 300–580 nm wavelength region, when compared with other ligand end groups. - Highlights: • CdSe QDs modified by L-cysteine possess wurtzite nanocrystalline structures. • Carboxyl end groups in the ligand serve to increase the SPV response of CdSe QDs. • Terminal hydroxyl group in the ligand might accommodate non-radiative de-excitation process in CdSe QDs. • Increased length of the alkyl chains and side-chain radicals in the ligands partially inhibit carriers transport of CdSe QDs.

  10. Assessing potential harmful effects of CdSe quantum dots by using Drosophila melanogaster as in vivo model

    International Nuclear Information System (INIS)

    Alaraby, Mohamed; Demir, Esref; Hernández, Alba; Marcos, Ricard

    2015-01-01

    Since CdSe QDs are increasingly used in medical and pharmaceutical sciences careful and systematic studies to determine their biosafety are needed. Since in vivo studies produce relevant information complementing in vitro data, we promote the use of Drosophila melanogaster as a suitable in vivo model to detect toxic and genotoxic effects associated with CdSe QD exposure. Taking into account the potential release of cadmium ions, QD effects were compared with those obtained with CdCl 2 . Results showed that CdSe QDs penetrate the intestinal barrier of the larvae reaching the hemolymph, interacting with hemocytes, and inducing dose/time dependent significant genotoxic effects, as determined by the comet assay. Elevated ROS production, QD biodegradation, and significant disturbance in the conserved Hsps, antioxidant and p53 genes were also observed. Overall, QD effects were milder than those induced by CdCl 2 suggesting the role of Cd released ions in the observed harmful effects of Cd based QDs. To reduce the observed side-effects of Cd based QDs biocompatible coats would be required to avoid cadmium's undesirable effects. - Highlights: • CdSe QDs were able to cross the intestinal barrier of Drosophila. • Elevated ROS induction was detected in larval hemocytes. • Changes in the expression of Hsps and p53 genes were observed. • Primary DNA damage was induced by CdSe QDs in hemocytes. • Overall, CdSe QD effects were milder than those induced by CdCl 2

  11. Effect of CdS/Mg-Doped CdSe Cosensitized Photoanode on Quantum Dot Solar Cells

    Directory of Open Access Journals (Sweden)

    Yingxiang Guan

    2015-01-01

    Full Text Available Quantum dots have emerged as a material platform for low-cost high-performance sensitized solar cells. And doping is an effective method to improve the performance of quantum dot sensitized solar cells (QDSSCs. Since Kwak et al. from South Korea proved the incorporation of Mg in the CdSe quantum dots (QDs in 2007, the Mg-doped CdSe QDs have been thoroughly studied. Here we report a new attempt on CdS/Mg-doped CdSe quantum dot cosensitized solar cells (QDCSSC. We analyzed the performance of CdS/Mg-doped CdSe quantum dot cosensitized solar cells via discussing the different doping concentration of Mg and the different SILAR cycles of CdS. And we studied the mechanism of CdS/Mg-doped CdSe QDs in detail for the reason why the energy conversion efficiency had been promoted. It is a significant instruction on the development of Mg-doped CdSe quantum dot sensitized solar cells (QDSSCs.

  12. An insight into the optical properties of CdSe quantum dots during their growth in bovine serum albumin solution

    International Nuclear Information System (INIS)

    Singh, Avinash; Ahmed, M.; Guleria, A.; Singh, A.K.; Adhikari, S.; Rath, M.C.

    2016-01-01

    Bovine serum albumin (BSA) assisted synthesis of cadmium selenide (CdSe) quantum dots (QDs) exhibits remarkable changes in the optical properties of the QDs as well as BSA during their growth. The growth of these QDs was investigated by recording the UV–visible absorption spectra and room temperature steady state fluorescence at different time intervals after the mixing of the precursors. The growth of these QDs was associated with a quenching of the fluorescence from BSA. The fluorescence from these QDs was found to be associated with several features: (1) a gradual red-shift in its peak position, (2) increase in intensity with an isoemissive point up to few minutes from the time of mixing of the two precursors, and (3) subsequent decrease in intensity reaching a minimum value, which remains almost unchanged thereafter. The decrease and increase in the fluorescence from BSA and CdSe QDs, respectively have been explained on the basis of Förster resonance energy transfer (FRET) as well as the simultaneous growth of these QDs. - Highlights: • CdSe quantum dots were synthesized in the presence of bovine serum albumin (BSA). • Fluorescence from BSA was quenched by during the growth of CdSe quantum dots. • There was an energy transfer from BSA to CdSe quantum dots during their growth. • The emission from CdSe quantum dots was associated with a red-shift.

  13. Humidity-insensitive water evaporation from molecular complex fluids.

    Science.gov (United States)

    Salmon, Jean-Baptiste; Doumenc, Frédéric; Guerrier, Béatrice

    2017-09-01

    We investigated theoretically water evaporation from concentrated supramolecular mixtures, such as solutions of polymers or amphiphilic molecules, using numerical resolutions of a one-dimensional model based on mass transport equations. Solvent evaporation leads to the formation of a concentrated solute layer at the drying interface, which slows down evaporation in a long-time-scale regime. In this regime, often referred to as the falling rate period, evaporation is dominated by diffusive mass transport within the solution, as already known. However, we demonstrate that, in this regime, the rate of evaporation does not also depend on the ambient humidity for many molecular complex fluids. Using analytical solutions in some limiting cases, we first demonstrate that a sharp decrease of the water chemical activity at high solute concentration leads to evaporation rates which depend weakly on the humidity, as the solute concentration at the drying interface slightly depends on the humidity. However, we also show that a strong decrease of the mutual diffusion coefficient of the solution enhances considerably this effect, leading to nearly independent evaporation rates over a wide range of humidity. The decrease of the mutual diffusion coefficient indeed induces strong concentration gradients at the drying interface, which shield the concentration profiles from humidity variations, except in a very thin region close to the drying interface.

  14. Converting Simulated Sodium-bearing Waste into a Single Solid Waste Form by Evaporation: Laboratory- and Pilot-Scale Test Results on Recycling Evaporator Overheads

    Energy Technology Data Exchange (ETDEWEB)

    Griffith, D.; D. L. Griffith; R. J. Kirkham; L. G. Olson; S. J. Losinski

    2004-01-01

    Conversion of Idaho National Engineering and Environmental Laboratory radioactive sodium-bearing waste into a single solid waste form by evaporation was demonstrated in both flask-scale and pilot-scale agitated thin film evaporator tests. A sodium-bearing waste simulant was adjusted to represent an evaporator feed in which the acid from the distillate is concentrated, neutralized, and recycled back through the evaporator. The advantage to this flowsheet is that a single remote-handled transuranic waste form is produced in the evaporator bottoms without the generation of any low-level mixed secondary waste. However, use of a recycle flowsheet in sodium-bearing waste evaporation results in a 50% increase in remote-handled transuranic volume in comparison to a non-recycle flowsheet.

  15. PFR evaporator leak

    International Nuclear Information System (INIS)

    Smedley, J.A.

    1975-01-01

    PFR has three heat removal circuits each one having an evaporator, superheater, reheater; all separate units. The status of the system was that circuit No 3 was steaming with 10 MW thermal nuclear power; No 1 circuit was filled with sodium but with the evaporator awaiting modification to cure gas entrainment problems already reported. The leak was in No 2 circuit and was located in the evaporator unit. The evaporator is rated at 120 M thermal at full power and as such is a large unit. The circuit was filled with both sodium and water for the first time three weeks before the conference so it was recent history being reported and therefore any figures quoted should be taken as indicative only. The history of the steam generator was that it was built at works to a very high standard and underwent all the usual tests of strength, inspection of welds and helium leak testing. The steam generator is of U tube design with a tube plate to which the boiler tubes are welded, with all the welds in one of two gas spaces. The inlet and outlet sides are separated by a baffle and the salient features are illustrated in the attached figure. The unit achieved a leak tightness better than the detection limit in the helium leak test at works. This limit was assessed as being less than an equivalent leak of 10 -6 g/s water under steam generator service conditions. However even though all the steam generator units passed this test at works a further test was carried out when the circuits had been completed. The test was carried out during commissioning after sodium filling and with the units hot. The method was to introduce a mixture of helium/ argon at 500 pounds/square inch into the water side of the steam generators and measure the helium concentration in the sodium side gas spaces of the circuit. The test lasted many days and under these conditions the sensitivity is such that a leak equivalent to somewhere between 10 -7 to 10 -6 g/s equivalent water leak could be detected, i

  16. PFR evaporator leak

    Energy Technology Data Exchange (ETDEWEB)

    Smedley, J A

    1975-07-01

    PFR has three heat removal circuits each one having an evaporator, superheater, reheater; all separate units. The status of the system was that circuit No 3 was steaming with 10 MW thermal nuclear power; No 1 circuit was filled with sodium but with the evaporator awaiting modification to cure gas entrainment problems already reported. The leak was in No 2 circuit and was located in the evaporator unit. The evaporator is rated at 120 M thermal at full power and as such is a large unit. The circuit was filled with both sodium and water for the first time three weeks before the conference so it was recent history being reported and therefore any figures quoted should be taken as indicative only. The history of the steam generator was that it was built at works to a very high standard and underwent all the usual tests of strength, inspection of welds and helium leak testing. The steam generator is of U tube design with a tube plate to which the boiler tubes are welded, with all the welds in one of two gas spaces. The inlet and outlet sides are separated by a baffle and the salient features are illustrated in the attached figure. The unit achieved a leak tightness better than the detection limit in the helium leak test at works. This limit was assessed as being less than an equivalent leak of 10{sup -6} g/s water under steam generator service conditions. However even though all the steam generator units passed this test at works a further test was carried out when the circuits had been completed. The test was carried out during commissioning after sodium filling and with the units hot. The method was to introduce a mixture of helium/ argon at 500 pounds/square inch into the water side of the steam generators and measure the helium concentration in the sodium side gas spaces of the circuit. The test lasted many days and under these conditions the sensitivity is such that a leak equivalent to somewhere between 10{sup -7} to 10{sup -6} g/s equivalent water leak could be

  17. Evaporation and Antievaporation Instabilities

    Directory of Open Access Journals (Sweden)

    Andrea Addazi

    2017-10-01

    Full Text Available We review (antievaporation phenomena within the context of quantum gravity and extended theories of gravity. The (antievaporation effect is an instability of the black hole horizon discovered in many different scenarios: quantum dilaton-gravity, f ( R -gravity, f ( T -gravity, string-inspired black holes, and brane-world cosmology. Evaporating and antievaporating black holes seem to have completely different thermodynamical features compared to standard semiclassical black holes. The purpose of this review is to provide an introduction to conceptual and technical aspects of (antievaporation effects, while discussing problems that are still open.

  18. Realization and field emission of CdSe nano-tetrapods with different arm lengths

    International Nuclear Information System (INIS)

    Zhao Lijuan; Pang Qi; Yang Shihe; Ge Weikun; Wang Jiannong

    2009-01-01

    The arms of CdSe nano-tetrapods can be greatly elongated with the core diameters and arm width unchanged by multiple injections. Room-temperature absorption and photoluminescence (PL) spectra of tetrapods with different arm lengths show that these tetrapods have almost the same core size, which is consistent with the high resolution TEM results. Field emission characteristics show that the onset field required drawing a current density of ∼0.1 μAcm -2 from CdSe nano-tetrapods with different arm lengths are 22 Vμm -1 , 9 Vμm -1 , and 4 Vμm -1 , respectively, and the field enhancement factors are determined to be about 218, 554, and 946, respectively. Results show that the longer is the arm of the tetrapods, the lower the turn-on field and the higher the field enhancement factor.

  19. Light-gated single CdSe nanowire transistor: photocurrent saturation and band gap extraction

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yang, E-mail: yangzh08@gmail.com; Chakraborty, Ritun; Kudera, Stefan; Krahne, Roman, E-mail: roman.krahne@iit.it [Istituto Italiano di Tecnologia, Nanochemistry department (Italy)

    2015-11-15

    CdSe nanowires are popular building blocks for many optoelectronic devices mainly owing to their direct band gap in the visible range of the spectrum. Here we investigate the optoelectronic properties of single CdSe nanowires fabricated by colloidal synthesis, in terms of their photocurrent–voltage characteristics and photoconductivity spectra recorded at 300 and 18 K. The photocurrent is identified as the secondary photocurrent, which gives rise to a photoconductive gain of ∼35. We observe a saturation of the photocurrent beyond a certain voltage bias that can be related to the finite drift velocity of electrons. From the photoconductivity spectra, we determine the band gap energy of the nanowires as ∼1.728 eV, and we resolve low-energy peaks that can be associated with sub-bandgap states.Graphical Abstract.

  20. Realization and field emission of CdSe nano-tetrapods with different arm lengths

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Lijuan, E-mail: ljzhao@dhu.edu.c [Applied Physics Department, Donghua University, Shanghai 201620 (China); Physics Department and the Institute of Nano-Science and Technology, Hong Kong University of Science and Technology, Clear Water Bay (Hong Kong); Pang Qi [Physics Department and the Institute of Nano-Science and Technology, Hong Kong University of Science and Technology, Clear Water Bay (Hong Kong); Yang Shihe [Chemistry Department and the Institute of Nano-Science and Technology, Hong Kong University of Science and Technology, Clear Water Bay (Hong Kong); Ge Weikun; Wang Jiannong [Physics Department and the Institute of Nano-Science and Technology, Hong Kong University of Science and Technology, Clear Water Bay (Hong Kong)

    2009-08-10

    The arms of CdSe nano-tetrapods can be greatly elongated with the core diameters and arm width unchanged by multiple injections. Room-temperature absorption and photoluminescence (PL) spectra of tetrapods with different arm lengths show that these tetrapods have almost the same core size, which is consistent with the high resolution TEM results. Field emission characteristics show that the onset field required drawing a current density of approx0.1 muAcm{sup -2} from CdSe nano-tetrapods with different arm lengths are 22 Vmum{sup -1}, 9 Vmum{sup -1}, and 4 Vmum{sup -1}, respectively, and the field enhancement factors are determined to be about 218, 554, and 946, respectively. Results show that the longer is the arm of the tetrapods, the lower the turn-on field and the higher the field enhancement factor.

  1. Enhancing Photocatalytic Degradation of Methyl Blue Using PVP-Capped and Uncapped CdSe Nanoparticles

    OpenAIRE

    Chepape, Kgobudi Frans; Mofokeng, Thapelo Prince; Nyamukamba, Pardon; Mubiayi, Kalenga Pierre; Moloto, Makwena Justice

    2017-01-01

    Quantum confinement of semiconductor nanoparticles is a potential feature which can be interesting for photocatalysis, and cadmium selenide is one simple type of quantum dot to use in the following photocatalytic degradation of organic dyes. CdSe nanoparticles capped with polyvinylpyrrolidone (PVP) in various concentration ratios were synthesized by the chemical reduction method and characterized. The transmission electron microscopy (TEM) analysis of the samples showed that 50% PVP-capped Cd...

  2. A Suitable Polysulfide Electrolyte for CdSe Quantum Dot-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    H. K. Jun

    2013-01-01

    Full Text Available A polysulfide liquid electrolyte is developed for the application in CdSe quantum dot-sensitized solar cells (QDSSCs. A solvent consisting of ethanol and water in the ratio of 8 : 2 by volume has been found as the optimum solvent for preparing the liquid electrolytes. This solvent ratio appears to give higher cell efficiency compared to pure ethanol or water as a solvent. Na2S and S give rise to a good redox couple in the electrolyte for QDSSC operation, and the optimum concentrations required are 0.5 M and 0.1 M, respectively. Addition of guanidine thiocyanate (GuSCN to the electrolyte further enhances the performance. The QDSSC with CdSe sensitized electrode prepared using 7 cycles of successive ionic layer adsorption and reaction (SILAR produces an efficiency of 1.41% with a fill factor of 44% on using a polysulfide electrolyte of 0.5 M Na2S, 0.1 M S, and 0.05 M GuSCN in ethanol/water (8 : 2 by volume under the illumination of 100 mW/cm2 white light. Inclusion of small amount of TiO2 nanoparticles into the electrolyte helps to stabilize the polysulfide electrolyte and thereby improve the stability of the CdSe QDSSC. The CdSe QDs are also found to be stable in the optimized polysulfide liquid electrolyte.

  3. Electron microscopy and positron annihilation study of CdSe nanoclusters embedded in MgO

    NARCIS (Netherlands)

    van Huis, M.A.; van Veen, A.; Schut, H.; Eijt, S.W.H.; Kooi, B.J.; de Hosson, J.T.M.

    CdSe nanoclusters are created in MgO by means of co-implantation of 280 keV, 1 x 10(16) Cd ions cm(-2) and 210 keV, 1 x 10(16) Se ions cm(-2) in single crystals of MgO(001) and subsequent thermal annealing at a temperature of 1300 K, The structural properties and the orientation relationship between

  4. Evaporation of inclined water droplets

    Science.gov (United States)

    Kim, Jin Young; Hwang, In Gyu; Weon, Byung Mook

    2017-01-01

    When a drop is placed on a flat substrate tilted at an inclined angle, it can be deformed by gravity and its initial contact angle divides into front and rear contact angles by inclination. Here we study on evaporation dynamics of a pure water droplet on a flat solid substrate by controlling substrate inclination and measuring mass and volume changes of an evaporating droplet with time. We find that complete evaporation time of an inclined droplet becomes longer as gravitational influence by inclination becomes stronger. The gravity itself does not change the evaporation dynamics directly, whereas the gravity-induced droplet deformation increases the difference between front and rear angles, which quickens the onset of depinning and consequently reduces the contact radius. This result makes the evaporation rate of an inclined droplet to be slow. This finding would be important to improve understanding on evaporation dynamics of inclined droplets. PMID:28205642

  5. Fingerprint detection and using intercalated CdSe nanoparticles on non-porous surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Algarra, Manuel, E-mail: malgarra67@gmail.com [Centro de Geología da Universidade do Porto, Departamento de Geociências, Ambiente e Ordenamemto do Territorio do Porto, Faculdade de Ciências, Universidade do Porto, Rua do Campo Alegre 687, 4169-007 Porto (Portugal); Radotić, Ksenija; Kalauzi, Aleksandar; Mutavdžić, Dragosav; Savić, Aleksandar [Institute for Multidisciplinary Research, University of Belgrade, Kneza Višeslava 1, 11000 Beograd (Serbia); Jiménez-Jiménez, José; Rodríguez-Castellón, Enrique [Departamento de Química Inorgánica, Facultad de Ciencias, Universidad de Málaga, Campus de Teatinos s/n, 29071Málaga (Spain); Silva, Joaquim C.G. Esteves da [Centro de Investigação em Química (CIQ-UP). Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre 687, 4169-007 Porto (Portugal); Guerrero-González, Juan José [Policía Científica, Cuerpo Nacional de Policía, Málaga (Spain)

    2014-02-17

    Graphical abstract: -- Highlights: •Fluorescent nanocomposite based on the inclusion of CdSe quantum dots in porous phosphate heterostructures. •Characterized by FTIR, XRD and fluorescence spectroscopies. •Deconvolution of the emission spectra was confirmed by using multivariate curve resolution (MCR) method. •Application for fingerprint detection and analysis on different non-porous surfaces. -- Abstract: A fluorescent nanocomposite based on the inclusion of CdSe quantum dots in porous phosphate heterostructures, functionalized with amino groups (PPH-NH{sub 2}@CdSe), was synthesized, characterized and used for fingerprint detection. The main scopes of this work were first to develop a friendly chemical powder for detecting latent fingerprints, especially in non-porous surfaces; their further intercalation in PPH structure enables not to spread the fluorescent nanoparticles, for that reason very good fluorescent images can be obtained. The fingerprints, obtained on different non-porous surfaces such as iron tweezers, mobile telephone screen and magnetic band of a credit card, treated with this powder emit a pale orange luminescence under ultraviolet excitation. A further image processing consists of contrast enhancement that allows obtaining positive matches according to the information supplied from a police database, and showed to be more effective than that obtained with the non-processed images. Experimental results illustrate the effectiveness of proposed methods.

  6. Fingerprint detection and using intercalated CdSe nanoparticles on non-porous surfaces

    International Nuclear Information System (INIS)

    Algarra, Manuel; Radotić, Ksenija; Kalauzi, Aleksandar; Mutavdžić, Dragosav; Savić, Aleksandar; Jiménez-Jiménez, José; Rodríguez-Castellón, Enrique; Silva, Joaquim C.G. Esteves da; Guerrero-González, Juan José

    2014-01-01

    Graphical abstract: -- Highlights: •Fluorescent nanocomposite based on the inclusion of CdSe quantum dots in porous phosphate heterostructures. •Characterized by FTIR, XRD and fluorescence spectroscopies. •Deconvolution of the emission spectra was confirmed by using multivariate curve resolution (MCR) method. •Application for fingerprint detection and analysis on different non-porous surfaces. -- Abstract: A fluorescent nanocomposite based on the inclusion of CdSe quantum dots in porous phosphate heterostructures, functionalized with amino groups (PPH-NH 2 @CdSe), was synthesized, characterized and used for fingerprint detection. The main scopes of this work were first to develop a friendly chemical powder for detecting latent fingerprints, especially in non-porous surfaces; their further intercalation in PPH structure enables not to spread the fluorescent nanoparticles, for that reason very good fluorescent images can be obtained. The fingerprints, obtained on different non-porous surfaces such as iron tweezers, mobile telephone screen and magnetic band of a credit card, treated with this powder emit a pale orange luminescence under ultraviolet excitation. A further image processing consists of contrast enhancement that allows obtaining positive matches according to the information supplied from a police database, and showed to be more effective than that obtained with the non-processed images. Experimental results illustrate the effectiveness of proposed methods

  7. Cytotoxicity and fluorescence studies of silica-coated CdSe quantum dots for bioimaging applications

    International Nuclear Information System (INIS)

    Vibin, Muthunayagam; Vinayakan, Ramachandran; John, Annie; Raji, Vijayamma; Rejiya, Chellappan S.; Vinesh, Naresh S.; Abraham, Annie

    2011-01-01

    The toxicological effects of silica-coated CdSe quantum dots (QDs) were investigated systematically on human cervical cancer cell line. Trioctylphosphine oxide capped CdSe QDs were synthesized and rendered water soluble by overcoating with silica, using aminopropyl silane as silica precursor. The cytotoxicity studies were conducted by exposing cells to freshly synthesized QDs as a function of time (0–72 h) and concentration up to micromolar level by Lactate dehydrogenase assay, MTT [3-(4,5-Dimethylthiazol-2-yl)-2,5-Diphenyltetrazolium Bromide] assay, Neutral red cell viability assay, Trypan blue dye exclusion method and morphological examination of cells using phase contrast microscope. The in vitro analysis results showed that the silica-coated CdSe QDs were nontoxic even at higher loadings. Subsequently the in vivo fluorescence was also demonstrated by intravenous administration of the QDs in Swiss albino mice. The fluorescence images in the cryosections of tissues depicted strong luminescence property of silica-coated QDs under biological conditions. These results confirmed the role of these luminescent materials in biological labeling and imaging applications.

  8. Cytotoxicity and fluorescence studies of silica-coated CdSe quantum dots for bioimaging applications

    Energy Technology Data Exchange (ETDEWEB)

    Vibin, Muthunayagam [University of Kerala, Department of Biochemistry (India); Vinayakan, Ramachandran [National Institute for Interdisciplinary Science and Technology (CSIR), Photosciences and Photonics (India); John, Annie [Sree Chitra Tirunal Institute of Medical Sciences and Technology, Biomedical Technology Wing (India); Raji, Vijayamma; Rejiya, Chellappan S.; Vinesh, Naresh S.; Abraham, Annie, E-mail: annieab2@yahoo.co.in [University of Kerala, Department of Biochemistry (India)

    2011-06-15

    The toxicological effects of silica-coated CdSe quantum dots (QDs) were investigated systematically on human cervical cancer cell line. Trioctylphosphine oxide capped CdSe QDs were synthesized and rendered water soluble by overcoating with silica, using aminopropyl silane as silica precursor. The cytotoxicity studies were conducted by exposing cells to freshly synthesized QDs as a function of time (0-72 h) and concentration up to micromolar level by Lactate dehydrogenase assay, MTT [3-(4,5-Dimethylthiazol-2-yl)-2,5-Diphenyltetrazolium Bromide] assay, Neutral red cell viability assay, Trypan blue dye exclusion method and morphological examination of cells using phase contrast microscope. The in vitro analysis results showed that the silica-coated CdSe QDs were nontoxic even at higher loadings. Subsequently the in vivo fluorescence was also demonstrated by intravenous administration of the QDs in Swiss albino mice. The fluorescence images in the cryosections of tissues depicted strong luminescence property of silica-coated QDs under biological conditions. These results confirmed the role of these luminescent materials in biological labeling and imaging applications.

  9. Optical performance evolutions of reductive glutathione coated CdSe quantum dots in different environments

    International Nuclear Information System (INIS)

    Wang Lili; Jiang Jisen

    2011-01-01

    Optical performances of reductive glutathione coated CdSe quantum dots were studied under different ageing conditions. The enhancements of luminescence were obviously occurred for the samples ageing under illumination. The quantum yield of CdSe was enhanced continuously over 44 days at room temperature, and reached as high as 36.6%. O 2 was proved to make a certain contribute to the enhancement. The evolutions of the systems during the ageing time were deduced according to the variations of pH values with ageing time and the XRD results of the samples ageing in air with illumination. We conferred that the reduction of surface defects resulted from the photo-induced decomposition of CdSe quantum dots was the main reason for the enhancement of fluorescence. The production of CdO as a result of the surface reaction with O 2 made contributions to the enhancement for a certain extent. The curves of quantum yield versus ageing time were fitted with a stretched exponential function. It was found that the course of fluorescence enhancement accorded with the dynamics of system with strongly coupled hierarchical degrees of freedom.

  10. X-ray investigations for determining the aspect ratio in CdSe nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Pietsch, Ullrich; Kurtulus, Oezguel [Festkoerperphysik, Universitaet Siegen (Germany)

    2008-07-01

    Semiconductor based 1D nanostructures are of high technological interest due to potential application in 1D conductivity measurements and optical devices. Catalyst assisted solution-liquid-solid synthesis is a new method where nanocrystal catalysts are used to grow CdSe nanorods (NR) from solution. The aim of this study is to investigate CdSe samples prepared with this new method by means of X-ray diffraction. The measurements have been performed at DELTA synchrotron using a beam of wavelength 1.127A and an image plate system. It is found that the CdSe NRs have a crystal structure of wurtzite with an aspect ratio changing between 2 and 10. This is in contradiction with the results obtained from TEM measurements, according to which the lengths of the NRs are in the order of 1 {mu} and the widths are around 20 nm. Presently the results are interpreted by the appearance of stacking faults which separate uniformly stacked AB, AB layers from each other. It is planned to measure an individual NR using a nanofocused X-ray beam. Once an individual NR could be observed, the next step is to measure the powder spectrum using a CCD as a function of the position of the beam spot along the nanorod. Depending on this information, the parameters affecting the structure of the NRs would be clear by making experiments with samples prepared in different conditions.

  11. Detection of CdSe quantum dot photoluminescence for security label on paper

    Energy Technology Data Exchange (ETDEWEB)

    Isnaeni,, E-mail: isnaeni@lipi.go.id; Sugiarto, Iyon Titok [Research Center for Physics, Indonesian Institute of Science, Building 442 Puspiptek Serpong, South Tangerang, Banten, Indonesia 15314 (Indonesia); Bilqis, Ratu; Suseno, Jatmiko Endro [Department of Physics, Diponegoro University, Jl. Prof. Soedarto, Tembalang, Semarang, Indonesia 50275 (Indonesia)

    2016-02-08

    CdSe quantum dot has great potential in various applications especially for emitting devices. One example potential application of CdSe quantum dot is security label for anti-counterfeiting. In this work, we present a practical approach of security label on paper using one and two colors of colloidal CdSe quantum dot, which is used as stamping ink on various types of paper. Under ambient condition, quantum dot is almost invisible. The quantum dot security label can be revealed by detecting emission of quantum dot using photoluminescence and cnc machine. The recorded quantum dot emission intensity is then analyzed using home-made program to reveal quantum dot pattern stamp having the word ’RAHASIA’. We found that security label using quantum dot works well on several types of paper. The quantum dot patterns can survive several days and further treatment is required to protect the quantum dot. Oxidation of quantum dot that occurred during this experiment reduced the emission intensity of quantum dot patterns.

  12. Resonance Raman spectra of wurtzite and zincblende CdSe nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Kelley, Anne Myers, E-mail: amkelley@ucmerced.edu [Chemistry and Chemical Biology, School of Natural Sciences, University of California, 5200 North Lake Road, Merced, CA 95343 (United States); Dai, Quanqin; Jiang, Zhong-jie; Baker, Joshua A.; Kelley, David F. [Chemistry and Chemical Biology, School of Natural Sciences, University of California, 5200 North Lake Road, Merced, CA 95343 (United States)

    2013-08-30

    Highlights: ► Very similar resonance Raman spectra of wurtzite and zincblende CdSe nanocrystals. ► First absolute resonance Raman cross-sections reported for CdSe nanocrystals. ► LO overtones suggest slightly stronger electron–phonon coupling in wurtzite form. - Abstract: Resonance Raman spectra and absolute differential Raman cross-sections have been measured for CdSe nanocrystals in both the wurtzite and zincblende crystal forms at four excitation wavelengths from 457.9 to 514.5 nm. The frequency and bandshape of the longitudinal optical (LO) phonon fundamental is essentially identical for both crystal forms at each excitation wavelength. The LO phonon overtone to fundamental intensity ratio appears to be slightly higher for the wurtzite form, which may suggest slightly stronger exciton–phonon coupling from the Fröhlich mechanism in the wurtzite form. The LO fundamental Raman cross-sections are very similar for both crystal forms at each excitation wavelength.

  13. Study on growth kinetics of hexadecylamine capped CdSe nanoparticles using its electronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Oluwafemi, S.O., E-mail: tobi_55@yahoo.co [Department of Chemistry, University of Zululand, Private Bag X1001, Kwadlangezwa 3886 (South Africa); Revaprasadu, N. [Department of Chemistry, University of Zululand, Private Bag X1001, Kwadlangezwa 3886 (South Africa)

    2009-05-01

    The growth kinetics of hexadecylamine (HDA) capped CdSe synthesised via a novel, mild, effective, and facile non-organometallic route was studied using its electronic properties. The emission and optical maxima of all the nanoparticles synthesised are blue-shifted as the reaction time increases indicating decrease in particle size. The UV spectra show distinct excitonic features which can be attributed to the first electronic transition [1S{sub 3/2}(h)-1S(e)] occurring in CdSe nanoparticles with band-edge luminescence in their emission spectra. The extinction coefficient was determined for convenient and accurate measurements of the concentration of the nanocrystals. Nucleation is very fast and well separated from particle growth under this reaction condition. Two distinguishable stages of growth were observed: an early stage 0-10 min characterised by fast growth, with narrow size distribution and the late stage characterised by slow growth with slight defocusing of size distribution and large particle sizes. The diameter of the size ranges from 2.2 to 3.0 nm. About 94% of the available monomer concentration was consumed during the growth and the solubility of 3.0 nm CdSe in hexadecylamine is measured to be 9.216x10{sup -7} M{sup 2} at 433 deg. K.

  14. Properties of CdSe quantum dots coated with silica fabricated in a facile way

    International Nuclear Information System (INIS)

    Liao Yufeng; Li Wenjiang; He Sailing

    2007-01-01

    High quality quantum dots (QDs) CdSe were prepared using a novel and non-TOP method. Quantum dots of different sizes ranging from 2 to 4 nm could be obtained by removing aliquots of the reaction solution at different time intervals or by adjusting some reaction conditions. The CdSe quantum dots (core) were directly coated with silica (shell) using a microemulsion method. The design and preparation of a model QD/silica was described and characterized using transmission electron microscopy (TEM), UV-vis absorption, photoluminescence and laser confocal scanning microscopy. TEM images confirmed the well-monodispersed QDs and the silica shell around the CdSe core, respectively; laser confocal microscope images, UV-vis absorption and photoluminescence spectra clearly indicated that both the original QDs and the silica-coated QDs had good fluorescence properties. The quantum dots coated with silica shells were stable, water-soluble and less toxic (due to the silica shells), and are anticipated to be used as fluorescent probes for biosensing and imaging applications

  15. The effect of annealing on structural, optical and photosensitive properties of electrodeposited cadmium selenide thin films

    Directory of Open Access Journals (Sweden)

    Somnath Mahato

    2017-06-01

    Full Text Available Cadmium selenide (CdSe thin films have been deposited on indium tin oxide coated glass substrate by simple electrodeposition method. X-ray Diffraction (XRD studies identify that the as-deposited CdSe films are highly oriented to [002] direction and they belong to nanocrystalline hexagonal phase. The films are changed to polycrystalline structure after annealing in air for temperatures up to 450 °C and begin to degrade afterwards with the occurrence of oxidation and porosity. CdSe completely ceases to exist at higher annealing temperatures. CdSe films exhibit a maximum absorbance in the violet to blue-green region of an optical spectrum. The absorbance increases while the band gap decreases with increasing annealing temperature. Surface morphology also shows that the increase of the annealing temperature caused the grain growth. In addition, a number of distinct crystals is formed on top of the film surface. Electrical characteristics show that the films are photosensitive with a maximum sensitivity at 350 °C.

  16. 242-A evaporator hazards assessment

    International Nuclear Information System (INIS)

    Johnson, T.L.

    1998-01-01

    This document establishes the technical basis in support of Emergency Planning activities for the 242-A Evaporator, on the Hanford Site. Through this document the technical basis for the development of facility specific Emergency Action Levels and the Emergency Planning Zone is demonstrated. The evaporator sues a conventional, forced-circulation, vacuum evaporation system to concentrate radioactive waste solutions. This concentration results in the reduction in waste volume and reduces the number of double-shelled tanks required to store the waste

  17. Optical Waveguide Lightmode Spectroscopy (OWLS) as a Sensor for Thin Film and Quantum Dot Corrosion

    OpenAIRE

    Yu, Hao; Eggleston, Carrick M.; Chen, Jiajun; Wang, Wenyong; Dai, Qilin; Tang, Jinke

    2012-01-01

    Optical waveguide lightmode spectroscopy (OWLS) is usually applied as a biosensor system to the sorption-desorption of proteins to waveguide surfaces. Here, we show that OWLS can be used to monitor the quality of oxide thin film materials and of coatings of pulsed laser deposition synthesized CdSe quantum dots (QDs) intended for solar energy applications. In addition to changes in data treatment and experimental procedure, oxide- or QD-coated waveguide sensors must be synthesized. We synthesi...

  18. Turkish Undergraduates' Misconceptions of Evaporation, Evaporation Rate, and Vapour Pressure

    Science.gov (United States)

    Canpolat, Nurtac

    2006-01-01

    This study focused on students' misconceptions related to evaporation, evaporation rate, and vapour pressure. Open-ended diagnostic questions were used with 107 undergraduates in the Primary Science Teacher Training Department in a state university in Turkey. In addition, 14 students from that sample were interviewed to clarify their written…

  19. Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) yields better Hydrolytical Stability of Biocompatible SiOx Thin Films on Implant Alumina Ceramics compared to Rapid Thermal Evaporation Physical Vapor Deposition (PVD).

    Science.gov (United States)

    Böke, Frederik; Giner, Ignacio; Keller, Adrian; Grundmeier, Guido; Fischer, Horst

    2016-07-20

    Densely sintered aluminum oxide (α-Al2O3) is chemically and biologically inert. To improve the interaction with biomolecules and cells, its surface has to be modified prior to use in biomedical applications. In this study, we compared two deposition techniques for adhesion promoting SiOx films to facilitate the coupling of stable organosilane monolayers on monolithic α-alumina; physical vapor deposition (PVD) by thermal evaporation and plasma enhanced chemical vapor deposition (PE-CVD). We also investigated the influence of etching on the formation of silanol surface groups using hydrogen peroxide and sulfuric acid solutions. The film characteristics, that is, surface morphology and surface chemistry, as well as the film stability and its adhesion properties under accelerated aging conditions were characterized by means of X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX), scanning electron microscopy (SEM), inductively coupled plasma-optical emission spectroscopy (ICP-OES), and tensile strength tests. Differences in surface functionalization were investigated via two model organosilanes as well as the cell-cytotoxicity and viability on murine fibroblasts and human mesenchymal stromal cells (hMSC). We found that both SiOx interfaces did not affect the cell viability of both cell types. No significant differences between both films with regard to their interfacial tensile strength were detected, although failure mode analyses revealed a higher interfacial stability of the PE-CVD films compared to the PVD films. Twenty-eight day exposure to simulated body fluid (SBF) at 37 °C revealed a partial delamination of the thermally deposited PVD films whereas the PE-CVD films stayed largely intact. SiOx layers deposited by both PVD and PE-CVD may thus serve as viable adhesion-promoters for subsequent organosilane coupling agent binding to α-alumina. However, PE-CVD appears to be favorable for long-term direct film exposure to aqueous

  20. Optical thin film deposition

    International Nuclear Information System (INIS)

    Macleod, H.A.

    1979-01-01

    The potential usefulness in the production of optical thin-film coatings of some of the processes for thin film deposition which can be classified under the heading of ion-assisted techniques is examined. Thermal evaporation is the process which is virtually universally used for this purpose and which has been developed to a stage where performance is in almost all respects high. Areas where further improvements would be of value, and the possibility that ion-assisted deposition might lead to such improvements, are discussed. (author)

  1. Ballistic Evaporation and Solvation of Helium Atoms at the Surfaces of Protic and Hydrocarbon Liquids.

    Science.gov (United States)

    Johnson, Alexis M; Lancaster, Diane K; Faust, Jennifer A; Hahn, Christine; Reznickova, Anna; Nathanson, Gilbert M

    2014-11-06

    Atomic and molecular solutes evaporate and dissolve by traversing an atomically thin boundary separating liquid and gas. Most solutes spend only short times in this interfacial region, making them difficult to observe. Experiments that monitor the velocities of evaporating species, however, can capture their final interactions with surface solvent molecules. We find that polarizable gases such as N2 and Ar evaporate from protic and hydrocarbon liquids with Maxwell-Boltzmann speed distributions. Surprisingly, the weakly interacting helium atom emerges from these liquids at high kinetic energies, exceeding the expected energy of evaporation from salty water by 70%. This super-Maxwellian evaporation implies in reverse that He atoms preferentially dissolve when they strike the surface at high energies, as if ballistically penetrating into the solvent. The evaporation energies increase with solvent surface tension, suggesting that He atoms require extra kinetic energy to navigate increasingly tortuous paths between surface molecules.

  2. Direct growth of CdSe nanorods on ITO substrates by co-anchoring of ZnO nanoparticles and ethylenediamine

    International Nuclear Information System (INIS)

    Pan Shangke; Xu Tingting; Venkatesan, Swaminathan; Qiao Qiquan

    2012-01-01

    To grow CdSe nanorods directly onto indium tin oxide (ITO) substrates, a ZnO buffer layer composed of nanoparticles with diameter of ∼30–40 nm was prepared by spin coating ZnO sol–gel solution onto the ITO substrates. CdSe nanorods were then successfully in situ grown onto ITO substrates with diameter of ∼30–40 nm and length of ∼120–160 nm using solvothermal method in which CdSe·0.5en (en = ethylenediamine) acted as solution precursor. The in situ synthesized CdSe nanorods were conformed and characterized by atomic force microscope and electron microscopy. The mechanism of such in situ CdSe growth was understood as ZnO nanoparticles anchored en onto ITO substrates, while en linked CdSe with ZnO.

  3. Evaporative cooling: Effective latent heat of evaporation in relation to evaporation distance from the skin

    NARCIS (Netherlands)

    Havenith, G.; Bröde, P.; Hartog, E.A. den; Kuklane, K.; Holmer, I.; Rossi, R.M.; Richards, M.; Farnworth, B.; Wang, X.

    2013-01-01

    Calculation of evaporative heat loss is essential to heat balance calculations. Despite recognition that the value for latent heat of evaporation, used in these calculations, may not always reflect the real cooling benefit to the body, only limited quantitative data on this is available, which has

  4. Diameter- and current-density-dependent growth orientation of hexagonal CdSe nanowire arrays via electrodeposition

    International Nuclear Information System (INIS)

    Sun Hongyu; Li Xiaohong; Chen Yan; Guo Defeng; Xie Yanwu; Li Wei; Zhang Xiangyi; Liu Baoting

    2009-01-01

    Controlling the growth orientation of semiconductor nanowire arrays is of vital importance for their applications in the fields of nanodevices. In the present work, hexagonal CdSe nanowire arrays with various preferential growth orientations have been successfully yielded by employing the electrodeposition technique using porous alumina as templates (PATs). We demonstrate by experimental and theoretical efforts that the growth orientation of the CdSe nanowires can be effectively manipulated by varying either the nanopore diameter of the PATs or the deposited current density, which has significant effects on the optical properties of the CdSe nanowires. The present study provides an alternative approach to tuning the growth direction of electrodeposited nanowires and thus is of importance for the fabrication of nanodevices with controlled functional properties.

  5. Diameter- and current-density-dependent growth orientation of hexagonal CdSe nanowire arrays via electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Sun Hongyu; Li Xiaohong; Chen Yan; Guo Defeng; Xie Yanwu; Li Wei; Zhang Xiangyi [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004 (China); Liu Baoting, E-mail: xyzh66@ysu.edu.c [College of Physics Science and Technology, Hebei University, Baoding 071002 (China)

    2009-10-21

    Controlling the growth orientation of semiconductor nanowire arrays is of vital importance for their applications in the fields of nanodevices. In the present work, hexagonal CdSe nanowire arrays with various preferential growth orientations have been successfully yielded by employing the electrodeposition technique using porous alumina as templates (PATs). We demonstrate by experimental and theoretical efforts that the growth orientation of the CdSe nanowires can be effectively manipulated by varying either the nanopore diameter of the PATs or the deposited current density, which has significant effects on the optical properties of the CdSe nanowires. The present study provides an alternative approach to tuning the growth direction of electrodeposited nanowires and thus is of importance for the fabrication of nanodevices with controlled functional properties.

  6. SILAR controlled CdSe nanoparticles sensitized ZnO nanorods photoanode for solar cell application: Electrolyte effect.

    Science.gov (United States)

    Nikam, Pratibha R; Baviskar, Prashant K; Majumder, Sutripto; Sali, Jaydeep V; Sankapal, Babasaheb R

    2018-08-15

    Controlled growth of different sizes of cadmium selenide (CdSe) nanoparticles over well aligned ZnO nanorods have been performed using successive ionic layer adsorption and reaction (SILAR) technique at room temperature (27 °C) in order to form nano heterostructure solar cells. Deposition of compact layer of zinc oxide (ZnO) by SILAR technique on fluorine doped tin oxide (FTO) coated glass substrate followed by growth of vertically aligned ZnO nanorods array using chemical bath deposition (CBD) at low temperature (SILAR cycles for CdSe and with use of different electrolytes have been recorded as J-V characteristics and the maximum conversion efficiency of 0.63% have been attained with ferro/ferri cyanide electrolyte for 12 cycles CdSe coating over 1-D ZnO nanorods. Copyright © 2018 Elsevier Inc. All rights reserved.

  7. High quality zinc-blende CdSe nanocrystals synthesized in a hexadecylamine-oleic acid-paraffin liquid mixture

    Energy Technology Data Exchange (ETDEWEB)

    Wang Lan, E-mail: lwang322@yahoo.com.cn [Department of Applied Physics, Harbin Institute of Technology, Harbin 150001 (China); Department of Physics, Harbin Medical University, Harbin 150081 (China); Sun Xiudong, E-mail: xdsun@hit.edu.cn [Department of Applied Physics, Harbin Institute of Technology, Harbin 150001 (China); Liu Wenjing [Department of Astronautic Science and Mechanics, Harbin Institute of Technology, Harbin 150001 (China); Liu Bingyi [Laboratory Center for the School of Pharmacy, Harbin Medical University, Harbin 150081 (China)

    2010-03-15

    Safe, common, and low-cost compounds were used as solvents for the non-tri-n-octylphosphine (TOP) synthesis of high quality CdSe nanocrystals (NCs) in open air. In oleic acid-paraffin liquid system, CdSe nanocrystals in the less common zinc-blende (ZB, cubic) crystal structure have been obtained. The effects of adding n-hexadecylamine (HDA) to different solutions were discussed. Stable, highly homogeneous and luminescent CdSe nanocrystals were formed by adding n-hexadecylamine to Cd solution rather than to Se solution. Without any size sorting, the size distribution of the nanocrystals can be readily controlled and the highest photoluminescence (PL) quantum efficiency (QE) of the nanocrystals was up to 20-30%.

  8. High quality zinc-blende CdSe nanocrystals synthesized in a hexadecylamine-oleic acid-paraffin liquid mixture

    International Nuclear Information System (INIS)

    Wang Lan; Sun Xiudong; Liu Wenjing; Liu Bingyi

    2010-01-01

    Safe, common, and low-cost compounds were used as solvents for the non-tri-n-octylphosphine (TOP) synthesis of high quality CdSe nanocrystals (NCs) in open air. In oleic acid-paraffin liquid system, CdSe nanocrystals in the less common zinc-blende (ZB, cubic) crystal structure have been obtained. The effects of adding n-hexadecylamine (HDA) to different solutions were discussed. Stable, highly homogeneous and luminescent CdSe nanocrystals were formed by adding n-hexadecylamine to Cd solution rather than to Se solution. Without any size sorting, the size distribution of the nanocrystals can be readily controlled and the highest photoluminescence (PL) quantum efficiency (QE) of the nanocrystals was up to 20-30%.

  9. MnFe2O4/CdSe magneto-fluorescent nanocomposite for possible biomedical applications

    Science.gov (United States)

    Chandunika, R. K.; Vijayaraghavan, R.; Sahu, Niroj Kumar

    2018-04-01

    Acombined superparamagnetic and fluorescent MnFe2O4/CdSe multifunctional nanocompositehas been prepared by suitable surface functionalizationswith citric acid, polyethyleneimine(PEI) and thioglycolic acid (ThA).and the samples were characterized by XRD, FT-IR, TEM, Zeta Potential, VSM, UV-Vis and PL spectroscopy. MnFe2O4 crystalizes with average size of 38.6 nm whereas CdSe with average size of 2.03 nm. In composite, the CdSe quantum dots (QD) are homogeneously distributed in the matrix of porous MnFe2O4 nanoparticles. Thenanocomposites are well dispersed in aqueous solvent and possess significant magnetic and luminescence properties which may be utilised for magnetic resonance imaging and luminescence tagging of biomolecules.

  10. Localized surface plasmon resonance enhanced photoluminescence of CdSe QDs in PMMA matrix on silver colloids with different shapes

    International Nuclear Information System (INIS)

    Lu Liu; Xu Xiaoliang; Shi Chaoshu; Ming Hai

    2010-01-01

    Localized surface plasmon resonance (LSPR) enhanced photoluminescences (PL) from CdSe quantum dots (QDs) on worm-like or quasi-spherical silver colloids have been investigated. The shape of silver colloid film is controlled by annealing temperature (200 o C∼350 o C). Strong PL enhancements of CdSe QDs on both as-grown and annealed silver colloid films are observed. The results show that the PL enhancement factor of CdSe QDs on worm-like silver colloid film reaches as high as 15-fold. Moreover, the enhancement factor is 5 times larger than that obtained from the quasi-spherical silver colloids. The superiority of worm-like silver nanostructure on LSPR enhanced photoluminescence is attributed to its larger size, hot spots and multiple dipole resonance modes coupling, which are induced by aggregation effect.

  11. Chemical role of amines in the colloidal synthesis of CdSe quantum dots and their luminescence properties

    International Nuclear Information System (INIS)

    Nose, Katsuhiro; Fujita, Hiroshi; Omata, Takahisa; Otsuka-Yao-Matsuo, Shinya; Nakamura, Hiroyuki; Maeda, Hideaki

    2007-01-01

    The role of organic amines in the colloidal synthesis of CdSe quantum dots (QDs) has been studied. CdSe QDs were synthesized from the source solutions containing 5 vol% of amines having various alkyl chain lengths, stereochemical sizes and electron donation abilities. The role of the additional amines was evaluated on the basis of the photoluminescence (PL) properties such as PL wavelength and intensity of the obtained CdSe QDs. The observed PL spectra were explained by the fact that the amines behaved as capping ligands on the surface of the QDs in the product colloidal solution and complex ligands for cadmium in the source solutions. It was shown that the particle size was controlled by the diffusion process depending on the mass and stereochemical shape of the amines, and the luminescence intensity increased with the increasing electron donation ability and capping density of the amines

  12. Thin films of mixed metal compounds

    Science.gov (United States)

    Mickelsen, Reid A.; Chen, Wen S.

    1985-01-01

    A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

  13. Rapid Evaporation of microbubbles

    Science.gov (United States)

    Gautam, Jitendra; Esmaeeli, Asghar

    2008-11-01

    When a liquid is heated to a temperature far above its boiling point, it evaporates abruptly. Boiling of liquid at high temperatures can be explosive and destructive, and poses a potential hazard for a host of industrial processes. Explosive boiling may occur if a cold and volatile liquid is brought into contact with a hot and non-volatile liquid, or if a liquid is superheated or depressurized rapidly. Such possibilities are realized, for example, in the depressurization of low boiling point liquefied natural gas (LNG) in the pipelines or storage tanks as a result of a leak. While boiling of highly heated liquids can be destructive at macroscale, the (nearly) instantaneous pace of the process and the release of large amount of kinetic energy make the phenomena extremely attractive at microscale where it is possible to utilize the released energy to derive micromechanical systems. For instance, there is currently a growing interest in micro-explosion of liquid for generation of micro bubbles for actuation purposes. The aim of the current study is to gain a fundamental understanding of the subject using direct numerical simulations. In particular, we seek to investigate the boundary between stable and unstable nucleus growth in terms of the degree of liquid superheat and to compare the dynamics of unstable and stable growth.

  14. Assessing potential harmful effects of CdSe quantum dots by using Drosophila melanogaster as in vivo model

    Energy Technology Data Exchange (ETDEWEB)

    Alaraby, Mohamed [Grup de Mutagènesi, Departament de Genètica i de Microbiologia, Facultat de Biociències, Universitat Autònoma de Barcelona, Campus de Bellaterra, 08193 Cerdanyola del Vallès (Spain); Sohag University, Faculty of Sciences, Zoology Department, 82524-Campus, Sohag (Egypt); Demir, Esref [Akdeniz University, Faculty of Sciences, Department of Biology, 07058-Campus, Antalya (Turkey); Hernández, Alba [Grup de Mutagènesi, Departament de Genètica i de Microbiologia, Facultat de Biociències, Universitat Autònoma de Barcelona, Campus de Bellaterra, 08193 Cerdanyola del Vallès (Spain); CIBER Epidemiología y Salud Pública, ISCIII, Madrid (Spain); Marcos, Ricard, E-mail: ricard.marcos@uab.es [Grup de Mutagènesi, Departament de Genètica i de Microbiologia, Facultat de Biociències, Universitat Autònoma de Barcelona, Campus de Bellaterra, 08193 Cerdanyola del Vallès (Spain); CIBER Epidemiología y Salud Pública, ISCIII, Madrid (Spain)

    2015-10-15

    Since CdSe QDs are increasingly used in medical and pharmaceutical sciences careful and systematic studies to determine their biosafety are needed. Since in vivo studies produce relevant information complementing in vitro data, we promote the use of Drosophila melanogaster as a suitable in vivo model to detect toxic and genotoxic effects associated with CdSe QD exposure. Taking into account the potential release of cadmium ions, QD effects were compared with those obtained with CdCl{sub 2}. Results showed that CdSe QDs penetrate the intestinal barrier of the larvae reaching the hemolymph, interacting with hemocytes, and inducing dose/time dependent significant genotoxic effects, as determined by the comet assay. Elevated ROS production, QD biodegradation, and significant disturbance in the conserved Hsps, antioxidant and p53 genes were also observed. Overall, QD effects were milder than those induced by CdCl{sub 2} suggesting the role of Cd released ions in the observed harmful effects of Cd based QDs. To reduce the observed side-effects of Cd based QDs biocompatible coats would be required to avoid cadmium's undesirable effects. - Highlights: • CdSe QDs were able to cross the intestinal barrier of Drosophila. • Elevated ROS induction was detected in larval hemocytes. • Changes in the expression of Hsps and p53 genes were observed. • Primary DNA damage was induced by CdSe QDs in hemocytes. • Overall, CdSe QD effects were milder than those induced by CdCl{sub 2}.

  15. Layer-by-layer assembled porous CdSe films incorporated with plasmonic gold and improved photoelectrochemical behaviors

    International Nuclear Information System (INIS)

    Liu, Aiping; Ren, Qinghua; Yuan, Ming; Xu, Tao; Tan, Manlin; Zhao, Tingyu; Dong, Wenjun; Tang, Weihua

    2013-01-01

    Highlights: • A 3D porous CdSe film with plasmonic gold was fabricated by electrodeposition. • A prominent light absorption enhancement of CdSe films was attained by gold plasmon. • The photoelectrochemical response of CdSe was tunable by Au–CdSe bilayer number. • The porous Au–CdSe films had a potential application in energy conversion devices. -- Abstract: A simple method for creating three-dimensional porous wurtzite CdSe films incorporated with plasmonic gold by the electrochemical layer-by-layer assembly was proposed. A prominent enhancement in light absorption of CdSe films was attained by the efficient light scattering of gold plasmons as sub-wavelength antennas and concentrators and the near-field coupling of gold plasmons with the neighboring porous CdSe films. The broadband photocurrent enhancement of Au–CdSe composite systems in the visible light range and the local current maximum between 600 and 700 nm suggested the cooperative action of antenna effects and electromagnetic field enhancement resulting from localized surface plasmon excitation of gold. Furthermore, the photoelectrochemical response of porous Au–CdSe composite films was highly tunable with respect to the number of Au–CdSe bilayer. The optimal short-circuit current and open-circuit potential were obtained in a four-layer Au–CdSe system because the thicker absorber layer with less porous structure might limit the electrolyte diffusion into the hybrid electrode and impose a barrier for electron tunneling and transferring. The highly versatile and tunable properties of assembled porous Au–CdSe composite films demonstrated their potential application in energy conversion devices

  16. CdSe white quantum dots-based white light-emitting diodes with high color rendering index

    Science.gov (United States)

    Su, Yu-Sheng; Hsiao, Chih-Chun; Chung, Shu-Ru

    2016-09-01

    A white light emission CdSe quantum dots (QDs) can be prepared by chemical route under 180°C. An organic oleic acid (OA) is used to react with CdO to form Cd-OA complex. Hexadecylamine (HDA) and 1-Octadecene (ODE) were used as co-surfactants. By controlling the reaction time, a white light emission CdSe QDs can be obtained after reacts for 3 to 10 min. The luminescence spectra compose two obvious emission peaks and entire visible light ranges from 400 to 650 nm. Based on TEM measurement result, spherical morphologies with particle size 2.39+/-0.27 nm can be obtained. The quantum yields (QYs) of white CdSe QD are between 20 and 60 %, which depends on reaction time. A white CdSe QDs were mixed with UV cured gel (OPAS-226) with weight ratios 50.0 wt. %, and putted the mixture into reflective cup (3020, 13 mil) as convert type. The white LEDs have controllable CIE coordinates and correlated color temperature (CCT). The luminous efficacy of the device is less than 3 lm/W, but the color rendering index (CRI) for all devices are higher than 80. Since the luminous efficacy of hybrid devices has a direct dependence on the external QY of the UV-LED as well, the luminous efficacy can be improved by well dispersion of CdSe QDs in UV gel matrix and using optimized LED chips. Therefore, in this study, we provide a new and simple method to prepare high QY of white CdSe QDs and its have a potential to applicate in solid-state lighting.

  17. Hydrothermal waves in evaporating sessile drops

    OpenAIRE

    Brutin, D.; Rigollet, F.; Niliot, C. Le

    2009-01-01

    Drop evaporation is a simple phenomena but still unclear concerning the mechanisms of evaporation. A common agreement of the scientific community based on experimental and numerical work evidences that most of the evaporation occurs at the triple line. However, the rate of evaporation is still empirically predicted due to the lack of knowledge on the convection cells which develop inside the drop under evaporation. The evaporation of sessile drop is more complicated than it appears due to the...

  18. Reassignment of oxygen-related defects in CdTe and CdSe

    Energy Technology Data Exchange (ETDEWEB)

    Bastin, Dirk

    2015-05-22

    This thesis reassigns the O{sub Te}-V{sub Cd} complex in CdTe and the O{sub Se}-V{sub Cd} complex in CdSe to a sulfur-dioxygen complex SO{sub 2}*, and the O{sub Cd} defect in CdSe to a V{sub Cd}H{sub 2} complex using Fourier transformed infrared absorption spectroscopy. The publications of the previous complexes were investigated by theoreticians who performed first-principle calculations of theses complexes. The theoreticians ruled out the assignments and proposed alternative defects, instead. The discrepancy between the experimentally obtained and theoretically proposed defects was the motivation of this work. Two local vibrational modes located at 1096.8 (ν{sub 1}) and 1108.3 cm{sup -1} (ν{sub 2}) previously assigned to an O{sub Te}-V{sub Cd} complex are detected in CdTe single crystals doped with CdSO{sub 4} powder. Five weaker additional absorption lines accompanying ν{sub 1} and ν{sub 2} could be detected. The relative intensities of the absorption lines match a sulfur-dioxygen complex SO{sub 2}* having two configurations labeled ν{sub 1} and ν{sub 2}. A binding energy difference of 0.5±0.1 meV between the two configurations and an energy barrier of 53±4 meV separating the two configurations are determined. Uniaxial stress applied to the crystal leads to a splitting of the absorption lines which corresponds to an orthorhombic and monoclinic symmetry for ν{sub 1} and ν{sub 2}, respectively. In virgin and oxygen-doped CdSe single crystals, three local vibrational modes located at 1094.1 (γ{sub 1}), 1107.5 (γ{sub 2}), and 1126.3 cm{sup -1} (γ{sub 3}) previously attributed to an O{sub Se}-V{sub Cd} complex could be observed. The signals are accompanied by five weaker additional absorption features in their vicinity. The additional absorption lines are identified as isotope satellites of a sulfur-dioxygen complex SO{sub 2}* having three configurations γ{sub 1}, γ{sub 2}, and γ{sub 3}. IR absorption measurements with uniaxial stress applied to the

  19. Reassignment of oxygen-related defects in CdTe and CdSe

    International Nuclear Information System (INIS)

    Bastin, Dirk

    2015-01-01

    This thesis reassigns the O_T_e-V_C_d complex in CdTe and the O_S_e-V_C_d complex in CdSe to a sulfur-dioxygen complex SO_2*, and the O_C_d defect in CdSe to a V_C_dH_2 complex using Fourier transformed infrared absorption spectroscopy. The publications of the previous complexes were investigated by theoreticians who performed first-principle calculations of theses complexes. The theoreticians ruled out the assignments and proposed alternative defects, instead. The discrepancy between the experimentally obtained and theoretically proposed defects was the motivation of this work. Two local vibrational modes located at 1096.8 (ν_1) and 1108.3 cm"-"1 (ν_2) previously assigned to an O_T_e-V_C_d complex are detected in CdTe single crystals doped with CdSO_4 powder. Five weaker additional absorption lines accompanying ν_1 and ν_2 could be detected. The relative intensities of the absorption lines match a sulfur-dioxygen complex SO_2* having two configurations labeled ν_1 and ν_2. A binding energy difference of 0.5±0.1 meV between the two configurations and an energy barrier of 53±4 meV separating the two configurations are determined. Uniaxial stress applied to the crystal leads to a splitting of the absorption lines which corresponds to an orthorhombic and monoclinic symmetry for ν_1 and ν_2, respectively. In virgin and oxygen-doped CdSe single crystals, three local vibrational modes located at 1094.1 (γ_1), 1107.5 (γ_2), and 1126.3 cm"-"1 (γ_3) previously attributed to an O_S_e-V_C_d complex could be observed. The signals are accompanied by five weaker additional absorption features in their vicinity. The additional absorption lines are identified as isotope satellites of a sulfur-dioxygen complex SO_2* having three configurations γ_1, γ_2, and γ_3. IR absorption measurements with uniaxial stress applied to the CdSe crystal yield a monoclinic C_1_h symmetry for γ_1 and γ_2. The SO_2* complex is stable up to 600 C. This thesis assigns the ν-lines in

  20. Interfacial Instabilities in Evaporating Drops

    Science.gov (United States)

    Moffat, Ross; Sefiane, Khellil; Matar, Omar

    2007-11-01

    We study the effect of substrate thermal properties on the evaporation of sessile drops of various liquids. An infra-red imaging technique was used to record the interfacial temperature. This technique illustrates the non-uniformity in interfacial temperature distribution that characterises the evaporation process. Our results also demonstrate that the evaporation of methanol droplets is accompanied by the formation of wave-trains in the interfacial temperature field; similar patterns, however, were not observed in the case of water droplets. More complex patterns are observed for FC-72 refrigerant drops. The effect of substrate thermal conductivity on the structure of the complex pattern formation is also elucidated.

  1. Control of black hole evaporation?

    International Nuclear Information System (INIS)

    Ahn, Doyeol

    2007-01-01

    Contradiction between Hawking's semi-classical arguments and the string theory on the evaporation of a black hole has been one of the most intriguing problems in fundamental physics. A final-state boundary condition inside the black hole was proposed by Horowitz and Maldacena to resolve this contradiction. We point out that the original Hawking effect can also be regarded as a separate boundary condition at the event horizon for this scenario. Here, we found that the change of the Hawking boundary condition may affect the information transfer from the initial collapsing matter to the outgoing Hawking radiation during the evaporation process and as a result the evaporation process itself, significantly

  2. Intense Visible Luminescence in CdSe Quantum Dots by Efficiency Surface Passivation with H2O Molecules

    Directory of Open Access Journals (Sweden)

    Hyeoung Woo Park

    2012-01-01

    Full Text Available We have investigated the effect of water (H2O cooling and heat treatment on the luminescence efficiency of core CdSe quantum dots (QDs. The photoluminescence (PL quantum yield of the CdSe QDs was enhanced up to ~85%, and some periodic bright points were observed in wide color ranges during the heat treatment of QDs mixed with H2O. The PL enhancement of QDs could be attributed to the recovery of QDs surface traps by unreacted ligands confined within the hydrophilic H2O molecule containers.

  3. Size-dependent structure of CdSe nanoclusters formed after ion implantation in MgO

    OpenAIRE

    van Huis, MA; van Veen, A; Schut, H; Eijt, SWH; Kooi, BJ; De Hosson, JTM

    2005-01-01

    The band gap as well as the optical and structural properties of semiconductor CdSe nanoclusters change as a function of the nanocluster size. Embedded CdSe nanoclusters in MgO were created by means of sequential Cd and Se ion implantation followed by thermal annealing. Changes during annealing were monitored using optical absorption and positron annihilation spectroscopy. High-resolution TEM on cross-sections after annealing at a temperature of 1300 K showed that clusters with a size below 5...

  4. Introducing ultrasonic falling film evaporator for moderate temperature evaporation enhancement.

    Science.gov (United States)

    Dehbani, Maryam; Rahimi, Masoud

    2018-04-01

    In the present study, Ultrasonic Falling Film (USFF), as a novel technique has been proposed to increase the evaporation rate of moderate temperature liquid film. It is a proper method for some applications which cannot be performed at high temperature, such as foodstuff industry, due to their sensitivity to high temperatures. Evaporation rate of sodium chloride solution from an USFF on an inclined flat plate compared to that for Falling Film without ultrasonic irradiation (FF) at various temperatures was investigated. The results revealed that produced cavitation bubbles have different effects on evaporation rate at different temperatures. At lower temperatures, size fluctuation and collapse of bubbles and in consequence induced physical effects of cavitation bubbles resulted in more turbulency and evaporation rate enhancement. At higher temperatures, the behavior was different. Numerous created bubbles joined together and cover the plate surface, so not only decreased the ultrasound vibrations but also reduced the evaporation rate in comparison with FF. The highest evaporation rate enhancement of 353% was obtained at 40 °C at the lowest Reynolds number of 250. In addition, the results reveal that at temperature of 40 °C, USFF has the highest efficiency compared to FF. Copyright © 2017 Elsevier B.V. All rights reserved.

  5. Refractory material crucibles evaluation for U evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Damiao, A.J.; Vasconcelos, G.; Silveira, C.A.B.; Rodrigues, N.A.S. [Centro Tecnico Aeroespacial (CTA-IEAv), Sao Jose dos Campos, SP (Brazil). Inst. de Estudos Avancados

    1996-12-31

    In studies that involve small amounts of U vapor generation, such as spectroscopy or thin films, most of the E-gun power is delivered to the cooling system. Normally crucibles are used as container and thermal insulator. Since liquid U is extremely reactive at evaporation temperatures, the crucibles are seriously attacked, decreasing the insulation efficiency and adding contaminants to the U vapor. There is no complete solution for the problem, however, with a careful choice of materials, one can design crucibles with extended lifetime and reduced contamination. This work reports some preliminary results we have obtained in the assessing of crucible materials and design, such as, graphite, Si C, vitreous carbon and Al{sub 2} O{sub 3}. (author) 1 refs., 3 figs.,2 tabs.

  6. Refractory material crucibles evaluation for U evaporation

    International Nuclear Information System (INIS)

    Damiao, A.J.; Vasconcelos, G.; Silveira, C.A.B.; Rodrigues, N.A.S.

    1996-01-01

    In studies that involve small amounts of U vapor generation, such as spectroscopy or thin films, most of the E-gun power is delivered to the cooling system. Normally crucibles are used as container and thermal insulator. Since liquid U is extremely reactive at evaporation temperatures, the crucibles are seriously attacked, decreasing the insulation efficiency and adding contaminants to the U vapor. There is no complete solution for the problem, however, with a careful choice of materials, one can design crucibles with extended lifetime and reduced contamination. This work reports some preliminary results we have obtained in the assessing of crucible materials and design, such as, graphite, Si C, vitreous carbon and Al 2 O 3 . (author)

  7. Radiative Properties of Carriers in Cdse-Cds Core-Shell Heterostructured Nanocrystals of Various Geometries

    Science.gov (United States)

    Zhou, S.; Dong, L.; Popov, S.; Friberg, A. T.

    2013-07-01

    We report a model on core-shell heterostructured nanocrystals with CdSe as the core and CdS as the shell. The model is based on one-band Schrödinger equation. Three different geometries, nanodot, nanorod, and nanobone, are implemented. The carrier localization regimes with these structures are simulated, compared, and analyzed. Based on the electron and hole wave functions, the carrier overlap integral that has a great impact on stimulated emission is further investigated numerically by a novel approach. Furthermore, the relation between the nanocrystal size and electron-hole recombination energy is also examined.

  8. Dual manifold heat pipe evaporator

    Science.gov (United States)

    Adkins, D.R.; Rawlinson, K.S.

    1994-01-04

    An improved evaporator section is described for a dual manifold heat pipe. Both the upper and lower manifolds can have surfaces exposed to the heat source which evaporate the working fluid. The tubes in the tube bank between the manifolds have openings in their lower extensions into the lower manifold to provide for the transport of evaporated working fluid from the lower manifold into the tubes and from there on into the upper manifold and on to the condenser portion of the heat pipe. A wick structure lining the inner walls of the evaporator tubes extends into both the upper and lower manifolds. At least some of the tubes also have overflow tubes contained within them to carry condensed working fluid from the upper manifold to pass to the lower without spilling down the inside walls of the tubes. 1 figure.

  9. The evaporative vector: Homogeneous systems

    International Nuclear Information System (INIS)

    Klots, C.E.

    1987-05-01

    Molecular beams of van der Waals molecules are the subject of much current research. Among the methods used to form these beams, three-sputtering, laser ablation, and the sonic nozzle expansion of neat gases - yield what are now recognized to be ''warm clusters.'' They contain enough internal energy to undergo a number of first-order processes, in particular that of evaporation. Because of this evaporation and its attendant cooling, the properties of such clusters are time-dependent. The states of matter which can be arrived at via an evaporative vector on a typical laboratory time-scale are discussed. Topics include the (1) temperatures, (2) metastability, (3) phase transitions, (4) kinetic energies of fragmentation, and (5) the expression of magical properties, all for evaporating homogeneous clusters

  10. DWPF Recycle Evaporator Simulant Tests

    International Nuclear Information System (INIS)

    Stone, M

    2005-01-01

    Testing was performed to determine the feasibility and processing characteristics of an evaporation process to reduce the volume of the recycle stream from the Defense Waste Processing Facility (DWPF). The concentrated recycle would be returned to DWPF while the overhead condensate would be transferred to the Effluent Treatment Plant. Various blends of evaporator feed were tested using simulants developed from characterization of actual recycle streams from DWPF and input from DWPF-Engineering. The simulated feed was evaporated in laboratory scale apparatus to target a 30X volume reduction. Condensate and concentrate samples from each run were analyzed and the process characteristics (foaming, scaling, etc) were visually monitored during each run. The following conclusions were made from the testing: Concentration of the ''typical'' recycle stream in DWPF by 30X was feasible. The addition of DWTT recycle streams to the typical recycle stream raises the solids content of the evaporator feed considerably and lowers the amount of concentration that can be achieved. Foaming was noted during all evaporation tests and must be addressed prior to operation of the full-scale evaporator. Tests were conducted that identified Dow Corning 2210 as an antifoam candidate that warrants further evaluation. The condensate has the potential to exceed the ETP WAC for mercury, silicon, and TOC. Controlling the amount of equipment decontamination recycle in the evaporator blend would help meet the TOC limits. The evaporator condensate will be saturated with mercury and elemental mercury will collect in the evaporator condensate collection vessel. No scaling on heating surfaces was noted during the tests, but splatter onto the walls of the evaporation vessels led to a buildup of solids. These solids were difficult to remove with 2M nitric acid. Precipitation of solids was not noted during the testing. Some of the aluminum present in the recycle streams was converted from gibbsite to

  11. Construction of vesicle CdSe nano-semiconductors photocatalysts with improved photocatalytic activity: Enhanced photo induced carriers separation efficiency and mechanism insight.

    Science.gov (United States)

    Wen, Jiangsu; Ma, Changchang; Huo, Pengwei; Liu, Xinlin; Wei, Maobin; Liu, Yang; Yao, Xin; Ma, Zhongfei; Yan, Yongsheng

    2017-10-01

    Visible-light-driven photocatalysis as a green technology has attracted a lot of attention due to its potential applications in environmental remediation. Vesicle CdSe nano-semiconductor photocatalyst are successfully prepared by a gas template method and characterized by a variety of methods. The vesicle CdSe nano-semiconductors display enhanced photocatalytic performance for the degradation of tetracycline hydrochloride, the photodegradation rate of 78.824% was achieved by vesicle CdSe, which exhibited an increase of 31.779% compared to granular CdSe. Such an exceptional photocatalytic capability can be attributed to the unique structure of the vesicle CdSe nano-semiconductor with enhanced light absorption ability and excellent carrier transport capability. Meanwhile, the large surface area of the vesicle CdSe nano-semiconductor can increase the contact probability between catalyst and target and provide more surface-active centers. The photocatalytic mechanisms are analyzed by active species quenching. It indicates that h + and O 2 - are the main active species which play a major role in catalyzing environmental toxic pollutants. Simultaneously, the vesicle CdSe nano-semiconductor had high efficiency and stability. Copyright © 2017. Published by Elsevier B.V.

  12. Swift heavy ion induced modifications in optical and electrical properties of cadmium selenide thin films

    Science.gov (United States)

    Choudhary, Ritika; Chauhan, Rishi Pal

    2017-07-01

    The modification in various properties of thin films using high energetic ion beam is an exciting area of basic and applied research in semiconductors. In the present investigations, cadmium selenide (CdSe) thin films were deposited on ITO substrate using electrodeposition technique. To study the swift heavy ion (SHI) induced effects, the deposited thin films were irradiated with 120 MeV heavy Ag9+ ions using pelletron accelerator facility at IUAC, New Delhi, India. Structural phase transformation in CdSe thin film from metastable cubic phase to stable hexagonal phase was observed after irradiation leading to decrease in the band gap from 2.47 eV to 2.12 eV. The phase transformation was analyzed through X-ray diffraction patterns. During SHI irradiation, Generation of high temperature and pressure by thermal spike along the trajectory of incident ions in the thin films might be responsible for modification in the properties of thin films.[Figure not available: see fulltext.

  13. Improved performance of colloidal CdSe quantum dot-sensitized solar cells by hybrid passivation.

    Science.gov (United States)

    Huang, Jing; Xu, Bo; Yuan, Chunze; Chen, Hong; Sun, Junliang; Sun, Licheng; Agren, Hans

    2014-11-12

    A hybrid passivation strategy is employed to modify the surface of colloidal CdSe quantum dots (QDs) for quantum dot-sensitized solar cells (QDSCs), by using mercaptopropionic acid (MPA) and iodide anions through a ligand exchange reaction in solution. This is found to be an effective way to improve the performance of QDSCs based on colloidal QDs. The results show that MPA can increase the coverage of the QDs on TiO2 electrodes and facilitate the hole extraction from the photoxidized QDs, and simultaneously, that the iodide anions can remedy the surface defects of the CdSe QDs and thus reduce the recombination loss in the device. This hybrid passivation treatment leads to a significant enhancement of the power conversion efficiency of the QDSCs by 41%. Furthermore, an optimal ratio of iodide ions to MPA was determined for favorable hybrid passivation; results show that excessive iodine anions are detrimental to the loading of the QDs. This study demonstrates that the improvement in QDSC performance can be realized by using a combination of different functional ligands to passivate the QDs, and that ligand exchange in solution can be an effective approach to introduce different ligands.

  14. Efficient intranuclear gene delivery by CdSe aqueous quantum dots electrostatically-coated with polyethyleneimine

    International Nuclear Information System (INIS)

    Au, Giang H T; Shih, Wan Y; Shih, Wei-Heng

    2015-01-01

    Quantum dots (QDs) are semiconducting nanoparticles with photoluminescence properties that do not photobleach. Due to these advantages, using QDs for non-viral gene delivery has the additional benefit of being able to track the delivery of the genes in real time as it happens. We investigate the efficacy of mercaptopropionic acid (MPA)-capped CdSe aqueous quantum dots (AQDs) electrostatically complexed with branched polyethyleneimine (PEI) both as a non-viral gene delivery vector and as a fluorescent probe for tracking the delivery of genes into nuclei. The MPA-capped CdSe AQDs that were completely synthesized in water were the model AQDs. A nominal MPA:Cd:Se = 4:3:1 was chosen for optimal photoluminescence and zeta potential. The gene delivery study was carried out in vitro using a human colon cancer cell line, HT29 (ATCC). The model gene was a plasmid DNA (pDNA) that can express red fluorescent protein (RFP). Positively charged branched PEI was employed to provide a proton buffer to the AQDs to allow for endosomal escape. It is shown that by using a PEI-AQD complex with a PEI/AQD molar ratio of 300 and a nominal pDNA/PEI-AQD ratio of 6, we can achieve 75 ± 2.6% RFP expression efficiency with cell vitality remaining at 78 ± 4% of the control. (paper)

  15. Magnetic and dielectric study of Fe-doped CdSe nanoparticles

    Science.gov (United States)

    Das, Sayantani; Banerjee, Sourish; Bandyopadhyay, Sudipta; Sinha, Tripurari Prasad

    2018-01-01

    Nanoparticles of cadmium selenide (CdSe) and Fe (5% and 10%) doped CdSe have been synthesized by soft chemical route and found to have cubic structure. The magnetic field dependent magnetization measurement of the doped samples indicates the presence of anti-ferromagnetic order. The temperature dependent magnetization (M-T) measurement under zero field cooled and field cooled conditions has also ruled out the presence of ferromagnetic component in the samples at room temperature as well as low temperature. In order to estimate the anti-ferromagnetic coupling among the doped Fe atoms, an M-T measurement at 500 Oe has been carried out, and the Curie-Weiss temperature θ of the samples has been estimated from the inverse of susceptibility versus temperature plots. The dielectric relaxation peaks are observed in the spectra of imaginary part of dielectric constant. The temperature dependent relaxation time is found to obey the Arrhenius law having activation energy 0.4 eV for Fe doped samples. The frequency dependent conductivity spectra are found to obey the power law. [Figure not available: see fulltext.

  16. Electron microscopy and positron annihilation study of CdSe nanoclusters embedded in MgO

    International Nuclear Information System (INIS)

    Huis, M.A. van; Veen, A. van; Schut, H.; Eijt, S.W.H.; Kooi, B.J.; Hosson, J.Th.M. de

    2004-01-01

    CdSe nanoclusters are created in MgO by means of co-implantation of 280 keV, 1 x 10 16 Cd ions cm -2 and 210 keV, 1 x 10 16 Se ions cm -2 in single crystals of MgO(0 0 1) and subsequent thermal annealing at a temperature of 1300 K. The structural properties and the orientation relationship between the CdSe and the MgO are investigated using cross-sectional transmission electron microscopy (XTEM). The crystal structure of the nanoclusters depends on their size. The smallest nanoclusters with a size below 5 nm have the cubic rocksalt crystal structure. The larger nanoclusters have a different (most likely the cubic sphalerite) crystal structure. The defect evolution in the sample after ion implantation and during thermal annealing is investigated using Doppler broadening positron beam analysis (PBA). The defect evolution in samples co-implanted with Cd and Se is compared to the defect evolution in samples implanted with only Cd or only Se ions

  17. Nonlinear spectroscopy of the bound exciton states in CdSe single crystals

    International Nuclear Information System (INIS)

    Lisitsa, M.P.; Onishchenko, N.A.; Stolyarenko, A.V.; Ananchenko, V.V.; Polishchuk, S.V.

    1989-01-01

    The study is devoted to the pulsed laser radiation effect on the time-resolved variations of free and bound exciton bands region at the helium temperature. A gradual disappearance of the bound I 2 exciton state is observed with increase of the excitation intensity I in CdSe transmission spectra. This phenomenon is explained by the fact that despite of the shorter life of I 2 excitons as compared to the free ones, the concentration of the centres on which they localize is rather low (≤10 16 cm -3 ) while the evolution of the light-generated electron-hole pairs is such as the most probable recombination through the bound excitons. The transmission spectrum kinetics is studied. The intensity limitation of the laser pulse transmitted through the crystal in the region of the exciton ground state region is shown to be related with two-photon absorption (TPA) in which the exciton state is an intermediate level. The calculation results are in good agreement with the experiment. The estimations show the giant TPA coefficient of ∼10 3 cm/MW. The evolution of photoexcited nonequilibrium electron-hole pairs is studied. The possibility of using CdSe single crystals as spectrum-selective limiters of the laser pulses is shown. (author)

  18. Blue and green electroluminescence from CdSe nanocrystal quantum-dot-quantum-wells

    International Nuclear Information System (INIS)

    Lu, Y. F.; Cao, X. A.

    2014-01-01

    CdS/CdSe/ZnS quantum dot quantum well (QDQW) nanocrystals were synthesized using the successive ion layer adsorption and reaction technique, and their optical properties were tuned by bandgap and strain engineering. 3-monolayer (ML) CdSe QWs emitted blue photoluminescence at 467 nm with a spectral full-width-at-half-maximum of ∼30 nm. With a 3 ML ZnS cladding layer, which also acts as a passivating and strain-compensating layer, the QDQWs acquired a ∼35% quantum yield of the QW emission. Blue and green electroluminescence (EL) was obtained from QDQW light-emitting devices with 3–4.5 ML CdSe QWs. It was found that as the peak blueshifted, the overall EL was increasingly dominated by defect state emission due to poor hole injection into the QDQWs. The weak EL was also attributed to strong field-induced charge separation resulting from the unique QDQW geometry, weakening the oscillator strength of optical transitions

  19. Directed emission of CdSe nanoplatelets originating from strongly anisotropic 2D electronic structure

    Science.gov (United States)

    Scott, Riccardo; Heckmann, Jan; Prudnikau, Anatol V.; Antanovich, Artsiom; Mikhailov, Aleksandr; Owschimikow, Nina; Artemyev, Mikhail; Climente, Juan I.; Woggon, Ulrike; Grosse, Nicolai B.; Achtstein, Alexander W.

    2017-12-01

    Intrinsically directional light emitters are potentially important for applications in photonics including lasing and energy-efficient display technology. Here, we propose a new route to overcome intrinsic efficiency limitations in light-emitting devices by studying a CdSe nanoplatelets monolayer that exhibits strongly anisotropic, directed photoluminescence. Analysis of the two-dimensional k-space distribution reveals the underlying internal transition dipole distribution. The observed directed emission is related to the anisotropy of the electronic Bloch states governing the exciton transition dipole moment and forming a bright plane. The strongly directed emission perpendicular to the platelet is further enhanced by the optical local density of states and local fields. In contrast to the emission directionality, the off-resonant absorption into the energetically higher 2D-continuum of states is isotropic. These contrasting optical properties make the oriented CdSe nanoplatelets, or superstructures of parallel-oriented platelets, an interesting and potentially useful class of semiconductor-based emitters.

  20. Electron microscopy and positron annihilation study of CdSe nanoclusters embedded in MgO

    Energy Technology Data Exchange (ETDEWEB)

    Huis, M.A. van E-mail: vanhuis@iri.tudelft.nl; Veen, A. van; Schut, H.; Eijt, S.W.H.; Kooi, B.J.; Hosson, J.Th.M. de

    2004-06-01

    CdSe nanoclusters are created in MgO by means of co-implantation of 280 keV, 1 x 10{sup 16} Cd ions cm{sup -2} and 210 keV, 1 x 10{sup 16} Se ions cm{sup -2} in single crystals of MgO(0 0 1) and subsequent thermal annealing at a temperature of 1300 K. The structural properties and the orientation relationship between the CdSe and the MgO are investigated using cross-sectional transmission electron microscopy (XTEM). The crystal structure of the nanoclusters depends on their size. The smallest nanoclusters with a size below 5 nm have the cubic rocksalt crystal structure. The larger nanoclusters have a different (most likely the cubic sphalerite) crystal structure. The defect evolution in the sample after ion implantation and during thermal annealing is investigated using Doppler broadening positron beam analysis (PBA). The defect evolution in samples co-implanted with Cd and Se is compared to the defect evolution in samples implanted with only Cd or only Se ions.