Expert Oracle GoldenGate

CERN Document Server

Prusinski, Ben; Chung, Richard

2011-01-01

Expert Oracle GoldenGate is a hands-on guide to creating and managing complex data replication environments using the latest in database replication technology from Oracle. GoldenGate is the future in replication technology from Oracle, and aims to be best-of-breed. GoldenGate supports homogeneous replication between Oracle databases. It supports heterogeneous replication involving other brands such as Microsoft SQL Server and IBM DB2 Universal Server. GoldenGate is high-speed, bidirectional, highly-parallelized, and makes only a light impact on the performance of databases involved in replica

GATE V6: a major enhancement of the GATE simulation platform enabling modelling of CT and radiotherapy

Energy Technology Data Exchange (ETDEWEB)

Jan, S; Becheva, E [DSV/I2BM/SHFJ, Commissariat a l' Energie Atomique, Orsay (France); Benoit, D; Rehfeld, N; Stute, S; Buvat, I [IMNC-UMR 8165 CNRS-Paris 7 and Paris 11 Universities, 15 rue Georges Clemenceau, 91406 Orsay Cedex (France); Carlier, T [INSERM U892-Cancer Research Center, University of Nantes, Nantes (France); Cassol, F; Morel, C [Centre de physique des particules de Marseille, CNRS-IN2P3 and Universite de la Mediterranee, Aix-Marseille II, 163, avenue de Luminy, 13288 Marseille Cedex 09 (France); Descourt, P; Visvikis, D [INSERM, U650, Laboratoire du Traitement de l' Information Medicale (LaTIM), CHU Morvan, Brest (France); Frisson, T; Grevillot, L; Guigues, L; Sarrut, D; Zahra, N [Universite de Lyon, CREATIS, CNRS UMR5220, Inserm U630, INSA-Lyon, Universite Lyon 1, Centre Leon Berard (France); Maigne, L; Perrot, Y [Laboratoire de Physique Corpusculaire, 24 Avenue des Landais, 63177 Aubiere Cedex (France); Schaart, D R [Delft University of Technology, Radiation Detection and Medical Imaging, Mekelweg 15, 2629 JB Delft (Netherlands); Pietrzyk, U, E-mail: buvat@imnc.in2p3.fr [Reseach Center Juelich, Institute of Neurosciences and Medicine and Department of Physics, University of Wuppertal (Germany)

2011-02-21

GATE (Geant4 Application for Emission Tomography) is a Monte Carlo simulation platform developed by the OpenGATE collaboration since 2001 and first publicly released in 2004. Dedicated to the modelling of planar scintigraphy, single photon emission computed tomography (SPECT) and positron emission tomography (PET) acquisitions, this platform is widely used to assist PET and SPECT research. A recent extension of this platform, released by the OpenGATE collaboration as GATE V6, now also enables modelling of x-ray computed tomography and radiation therapy experiments. This paper presents an overview of the main additions and improvements implemented in GATE since the publication of the initial GATE paper (Jan et al 2004 Phys. Med. Biol. 49 4543-61). This includes new models available in GATE to simulate optical and hadronic processes, novelties in modelling tracer, organ or detector motion, new options for speeding up GATE simulations, examples illustrating the use of GATE V6 in radiotherapy applications and CT simulations, and preliminary results regarding the validation of GATE V6 for radiation therapy applications. Upon completion of extensive validation studies, GATE is expected to become a valuable tool for simulations involving both radiotherapy and imaging.

Novel Quantum Dot Gate FETs and Nonvolatile Memories Using Lattice-Matched II-VI Gate Insulators

Science.gov (United States)

Jain, F. C.; Suarez, E.; Gogna, M.; Alamoody, F.; Butkiewicus, D.; Hohner, R.; Liaskas, T.; Karmakar, S.; Chan, P.-Y.; Miller, B.; Chandy, J.; Heller, E.

2009-08-01

This paper presents the successful use of ZnS/ZnMgS and other II-VI layers (lattice-matched or pseudomorphic) as high- k gate dielectrics in the fabrication of quantum dot (QD) gate Si field-effect transistors (FETs) and nonvolatile memory structures. Quantum dot gate FETs and nonvolatile memories have been fabricated in two basic configurations: (1) monodispersed cladded Ge nanocrystals (e.g., GeO x -cladded-Ge quantum dots) site-specifically self-assembled over the lattice-matched ZnMgS gate insulator in the channel region, and (2) ZnTe-ZnMgTe quantum dots formed by self-organization, using metalorganic chemical vapor-phase deposition (MOCVD), on ZnS-ZnMgS gate insulator layers grown epitaxially on Si substrates. Self-assembled GeO x -cladded Ge QD gate FETs, exhibiting three-state behavior, are also described. Preliminary results on InGaAs-on-InP FETs, using ZnMgSeTe/ZnSe gate insulator layers, are presented.

New opening hours of the gates

CERN Multimedia

GS Department

2009-01-01

Please note the new opening hours of the gates as well as the intersites tunnel from the 19 May 2009: GATE A 7h - 19h GATE B 24h/24 GATE C 7h - 9h\t17h - 19h GATE D 8h - 12h\t13h - 16h GATE E 7h - 9h\t17h - 19h Prévessin 24h/24 The intersites tunnel will be opened from 7h30 to 18h non stop. GS-SEM Group Infrastructure and General Services Department

Optical XOR gate

Science.gov (United States)

Vawter, G. Allen

2013-11-12

An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

Intrinsic respiratory gating in small-animal CT

International Nuclear Information System (INIS)

Bartling, Soenke H.; Dinkel, Julien; Kauczor, Hans-Ulrich; Stiller, Wolfram; Semmler, Wolfhard; Grasruck, Michael; Madisch, Ijad; Gupta, Rajiv; Kiessling, Fabian

2008-01-01

Gating in small-animal CT imaging can compensate artefacts caused by physiological motion during scanning. However, all published gating approaches for small animals rely on additional hardware to derive the gating signals. In contrast, in this study a novel method of intrinsic respiratory gating of rodents was developed and tested for mice (n=5), rats (n=5) and rabbits (n=2) in a flat-panel cone-beam CT system. In a consensus read image quality was compared with that of non-gated and retrospective extrinsically gated scans performed using a pneumatic cushion. In comparison to non-gated images, image quality improved significantly using intrinsic and extrinsic gating. Delineation of diaphragm and lung structure improved in all animals. Image quality of intrinsically gated CT was judged to be equivalent to extrinsically gated ones. Additionally 4D datasets were calculated using both gating methods. Values for expiratory, inspiratory and tidal lung volumes determined with the two gating methods were comparable and correlated well with values known from the literature. We could show that intrinsic respiratory gating in rodents makes additional gating hardware and preparatory efforts superfluous. This method improves image quality and allows derivation of functional data. Therefore it bears the potential to find wide applications in small-animal CT imaging. (orig.)

Signatures of Mechanosensitive Gating.

Science.gov (United States)

Morris, Richard G

2017-01-10

The question of how mechanically gated membrane channels open and close is notoriously difficult to address, especially if the protein structure is not available. This perspective highlights the relevance of micropipette-aspirated single-particle tracking-used to obtain a channel's diffusion coefficient, D, as a function of applied membrane tension, σ-as an indirect assay for determining functional behavior in mechanosensitive channels. While ensuring that the protein remains integral to the membrane, such methods can be used to identify not only the gating mechanism of a protein, but also associated physical moduli, such as torsional and dilational rigidity, which correspond to the protein's effective shape change. As an example, three distinct D-versus-σ "signatures" are calculated, corresponding to gating by dilation, gating by tilt, and gating by a combination of both dilation and tilt. Both advantages and disadvantages of the approach are discussed. Copyright © 2017 Biophysical Society. Published by Elsevier Inc. All rights reserved.

Quantum gate decomposition algorithms.

Energy Technology Data Exchange (ETDEWEB)

Slepoy, Alexander

2006-07-01

Quantum computing algorithms can be conveniently expressed in a format of a quantum logical circuits. Such circuits consist of sequential coupled operations, termed ''quantum gates'', or quantum analogs of bits called qubits. We review a recently proposed method [1] for constructing general ''quantum gates'' operating on an qubits, as composed of a sequence of generic elementary ''gates''.

Self-gated fat-suppressed cardiac cine MRI.

Science.gov (United States)

Ingle, R Reeve; Santos, Juan M; Overall, William R; McConnell, Michael V; Hu, Bob S; Nishimura, Dwight G

2015-05-01

To develop a self-gated alternating repetition time balanced steady-state free precession (ATR-SSFP) pulse sequence for fat-suppressed cardiac cine imaging. Cardiac gating is computed retrospectively using acquired magnetic resonance self-gating data, enabling cine imaging without the need for electrocardiogram (ECG) gating. Modification of the slice-select rephasing gradients of an ATR-SSFP sequence enables the acquisition of a one-dimensional self-gating readout during the unused short repetition time (TR). Self-gating readouts are acquired during every TR of segmented, breath-held cardiac scans. A template-matching algorithm is designed to compute cardiac trigger points from the self-gating signals, and these trigger points are used for retrospective cine reconstruction. The proposed approach is compared with ECG-gated ATR-SSFP and balanced steady-state free precession in 10 volunteers and five patients. The difference of ECG and self-gating trigger times has a variability of 13 ± 11 ms (mean ± SD). Qualitative reviewer scoring and ranking indicate no statistically significant differences (P > 0.05) between self-gated and ECG-gated ATR-SSFP images. Quantitative blood-myocardial border sharpness is not significantly different among self-gated ATR-SSFP ( 0.61±0.15 mm -1), ECG-gated ATR-SSFP ( 0.61±0.15 mm -1), or conventional ECG-gated balanced steady-state free precession cine MRI ( 0.59±0.15 mm -1). The proposed self-gated ATR-SSFP sequence enables fat-suppressed cardiac cine imaging at 1.5 T without the need for ECG gating and without decreasing the imaging efficiency of ATR-SSFP. © 2014 Wiley Periodicals, Inc.

Low band-to-band tunnelling and gate tunnelling current in novel nanoscale double-gate architecture: simulations and investigation

International Nuclear Information System (INIS)

Datta, Deepanjan; Ganguly, Samiran; Dasgupta, S

2007-01-01

Large band-to-band tunnelling (BTBT) and gate leakage current can limit scalability of nanoscale devices. In this paper, we have proposed a novel nanoscale parallel connected heteromaterial double gate (PCHEM-DG) architecture with triple metal gate which significantly suppress BTBT leakage, making it efficient for low power design in the sub-10 nm regime. We have also proposed a triple gate device with p + poly-n + poly-p + poly gate which has substantially low gate leakage over symmetric DG MOSFET. Simulations are performed using a 2D Poisson-Schroedinger simulator and verified with a 2D device simulator ATLAS. We conclude that, due to intrinsic body doping, negligible gate leakage, suppressed BTBT over symmetric DG devices, metal gate (MG) PCHEM-DG MOSFET is efficient for low power circuit design in the nanometre regime

Visualization of neonatal coronary arteries on multidetector row CT: ECG-gated versus non-ECG-gated technique

International Nuclear Information System (INIS)

Tsai, I.C.; Lee, Tain; Chen, Min-Chi; Fu, Yun-Ching; Jan, Sheng-Lin; Wang, Chung-Chi; Chang, Yen

2007-01-01

Multidetector CT (MDCT) seems to be a promising tool for detection of neonatal coronary arteries, but whether the ECG-gated or non-ECG-gated technique should be used has not been established. To compare the detection rate and image quality of neonatal coronary arteries on MDCT using ECG-gated and non-ECG-gated techniques. Twelve neonates with complex congenital heart disease were included. The CT scan was acquired using an ECG-gated technique, and the most quiescent phase of the RR interval was selected to represent the ECG-gated images. The raw data were then reconstructed without the ECG signal to obtain non-ECG-gated images. The detection rate and image quality of nine coronary artery segments in the two sets of images were then compared. A two-tailed paired t test was used with P values <0.05 considered as statistically significant. In all coronary segments the ECG-gated technique had a better detection rate and produced images of better quality. The difference between the two techniques ranged from 25% in the left main coronary artery to 100% in the distal right coronary artery. For neonates referred for MDCT, if evaluation of coronary artery anatomy is important for the clinical management or surgical planning, the ECG-gated technique should be used because it can reliably detect the coronary arteries. (orig.)

Low band-to-band tunnelling and gate tunnelling current in novel nanoscale double-gate architecture: simulations and investigation

Energy Technology Data Exchange (ETDEWEB)

Datta, Deepanjan [Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47906 (United States); Ganguly, Samiran [Department of Electronics Engineering, Indian School of Mines, Dhanbad-826004 (India); Dasgupta, S [Department of Electronics and Computer Engineering, Indian Institute of Technology, Roorkee-247667 (India)

2007-05-30

Large band-to-band tunnelling (BTBT) and gate leakage current can limit scalability of nanoscale devices. In this paper, we have proposed a novel nanoscale parallel connected heteromaterial double gate (PCHEM-DG) architecture with triple metal gate which significantly suppress BTBT leakage, making it efficient for low power design in the sub-10 nm regime. We have also proposed a triple gate device with p{sup +} poly-n{sup +} poly-p{sup +} poly gate which has substantially low gate leakage over symmetric DG MOSFET. Simulations are performed using a 2D Poisson-Schroedinger simulator and verified with a 2D device simulator ATLAS. We conclude that, due to intrinsic body doping, negligible gate leakage, suppressed BTBT over symmetric DG devices, metal gate (MG) PCHEM-DG MOSFET is efficient for low power circuit design in the nanometre regime.

Sliding-gate valve for use with abrasive materials

Science.gov (United States)

Ayers, Jr., William J.; Carter, Charles R.; Griffith, Richard A.; Loomis, Richard B.; Notestein, John E.

1985-01-01

The invention is a flow and pressure-sealing valve for use with abrasive solids. The valve embodies special features which provide for long, reliable operating lifetimes in solids-handling service. The valve includes upper and lower transversely slidable gates, contained in separate chambers. The upper gate provides a solids-flow control function, whereas the lower gate provides a pressure-sealing function. The lower gate is supported by means for (a) lifting that gate into sealing engagement with its seat when the gate is in its open and closed positions and (b) lowering the gate out of contact with its seat to permit abrasion-free transit of the gate between its open and closed positions. When closed, the upper gate isolates the lower gate from the solids. Because of this shielding action, the sealing surface of the lower gate is not exposed to solids during transit or when it is being lifted or lowered. The chamber containing the lower gate normally is pressurized slightly, and a sweep gas is directed inwardly across the lower-gate sealing surface during the vertical translation of the gate.

Photon-gated spin transistor

OpenAIRE

Li, Fan; Song, Cheng; Cui, Bin; Peng, Jingjing; Gu, Youdi; Wang, Guangyue; Pan, Feng

2017-01-01

Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It would be fundamentally transformative if optical gating was used for spin-FET. We report a new type of spin-polarized field-effect transistor (spin-FET) with optical gating, which is fabricated by partial exposure of the (La,Sr)MnO3 channel to light-emitti...

On photonic controlled phase gates

International Nuclear Information System (INIS)

Kieling, K; Eisert, J; O'Brien, J L

2010-01-01

As primitives for entanglement generation, controlled phase gates have a central role in quantum computing. Especially in ideas realizing instances of quantum computation in linear optical gate arrays, a closer look can be rewarding. In such architectures, all effective nonlinearities are induced by measurements. Hence the probability of success is a crucial parameter of such quantum gates. In this paper, we discuss this question for controlled phase gates that implement an arbitrary phase with one and two control qubits. Within the class of post-selected gates in dual-rail encoding with vacuum ancillas, we identify the optimal success probabilities. We construct networks that allow for implementation using current experimental capabilities in detail. The methods employed here appear specifically useful with the advent of integrated linear optical circuits, providing stable interferometers on monolithic structures.

Reversible logic gates on Physarum Polycephalum

International Nuclear Information System (INIS)

Schumann, Andrew

2015-01-01

In this paper, we consider possibilities how to implement asynchronous sequential logic gates and quantum-style reversible logic gates on Physarum polycephalum motions. We show that in asynchronous sequential logic gates we can erase information because of uncertainty in the direction of plasmodium propagation. Therefore quantum-style reversible logic gates are more preferable for designing logic circuits on Physarum polycephalum

Stanford, Duke, Rice,... and Gates?

Science.gov (United States)

Carey, Kevin

2009-01-01

This article presents an open letter to Bill Gates. In his letter, the author suggests that Bill Gates should build a brand-new university, a great 21st-century institution of higher learning. This university will be unlike anything the world has ever seen. He asks Bill Gates not to stop helping existing colleges create the higher-education system…

Benchmarking gate-based quantum computers

Science.gov (United States)

Michielsen, Kristel; Nocon, Madita; Willsch, Dennis; Jin, Fengping; Lippert, Thomas; De Raedt, Hans

2017-11-01

With the advent of public access to small gate-based quantum processors, it becomes necessary to develop a benchmarking methodology such that independent researchers can validate the operation of these processors. We explore the usefulness of a number of simple quantum circuits as benchmarks for gate-based quantum computing devices and show that circuits performing identity operations are very simple, scalable and sensitive to gate errors and are therefore very well suited for this task. We illustrate the procedure by presenting benchmark results for the IBM Quantum Experience, a cloud-based platform for gate-based quantum computing.

Gate Engineering in SOI LDMOS for Device Reliability

Directory of Open Access Journals (Sweden)

Aanand

2016-01-01

Full Text Available A linearly graded doping drift region with step gate structure, used for improvement of reduced surface field (RESURF SOI LDMOS transistor performance has been simulated with 0.35µm technology in this paper. The proposed device has one poly gate and double metal gate arranged in a stepped manner, from channel to drift region. The first gate uses n+ poly (near source where as other two gates of aluminium. The first gate with thin gate oxide has good control over the channel charge. The third gate with thick gate oxide at drift region reduce gate to drain capacitance. The arrangement of second and third gates in a stepped manner in drift region spreads the electric field uniformly. Using two dimensional device simulations, the proposed SOI LDMOS is compared with conventional structure and the extended metal structure. We demonstrate that the proposed device exhibits significant enhancement in linearity, breakdown voltage, on-resistance and HCI. Double metal gate reduces the impact ionization area which helps to improve the Hot Carrier Injection effect..

Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

Energy Technology Data Exchange (ETDEWEB)

Chun, Minkyu; Um, Jae Gwang; Park, Min Sang; Chowdhury, Md Delwar Hossain; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center and Department of Information Display, Kyung Hee University, Seoul 02447 (Korea, Republic of)

2016-07-15

We report the abnormal behavior of the threshold voltage (V{sub TH}) shift under positive bias Temperature stress (PBTS) and negative bias temperature stress (NBTS) at top/bottom gate in dual gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). It is found that the PBTS at top gate shows negative transfer shift and NBTS shows positive transfer shift for both top and bottom gate sweep. The shift of bottom/top gate sweep is dominated by top gate bias (V{sub TG}), while bottom gate bias (V{sub BG}) is less effect than V{sub TG}. The X-ray photoelectron spectroscopy (XPS) depth profile provides the evidence of In metal diffusion to the top SiO{sub 2}/a-IGZO and also the existence of large amount of In{sup +} under positive top gate bias around top interfaces, thus negative transfer shift is observed. On the other hand, the formation of OH{sup −} at top interfaces under the stress of negative top gate bias shows negative transfer shift. The domination of V{sub TG} both on bottom/top gate sweep after PBTS/NBTS is obviously occurred due to thin active layer.

CMOS gate array characterization procedures

Science.gov (United States)

Spratt, James P.

1993-09-01

Present procedures are inadequate for characterizing the radiation hardness of gate array product lines prior to personalization because the selection of circuits to be used, from among all those available in the manufacturer's circuit library, is usually uncontrolled. (Some circuits are fundamentally more radiation resistant than others.) In such cases, differences in hardness can result between different designs of the same logic function. Hardness also varies because many gate arrays feature large custom-designed megacells (e.g., microprocessors and random access memories-MicroP's and RAM's). As a result, different product lines cannot be compared equally. A characterization strategy is needed, along with standardized test vehicle(s), methodology, and conditions, so that users can make informed judgments on which gate arrays are best suited for their needs. The program described developed preferred procedures for the radiation characterization of gate arrays, including a gate array evaluation test vehicle, featuring a canary circuit, designed to define the speed versus hardness envelope of the gate array. A multiplier was chosen for this role, and a baseline multiplier architecture is suggested that could be incorporated into an existing standard evaluation circuit chip.

GATE: Improving the computational efficiency

International Nuclear Information System (INIS)

Staelens, S.; De Beenhouwer, J.; Kruecker, D.; Maigne, L.; Rannou, F.; Ferrer, L.; D'Asseler, Y.; Buvat, I.; Lemahieu, I.

2006-01-01

GATE is a software dedicated to Monte Carlo simulations in Single Photon Emission Computed Tomography (SPECT) and Positron Emission Tomography (PET). An important disadvantage of those simulations is the fundamental burden of computation time. This manuscript describes three different techniques in order to improve the efficiency of those simulations. Firstly, the implementation of variance reduction techniques (VRTs), more specifically the incorporation of geometrical importance sampling, is discussed. After this, the newly designed cluster version of the GATE software is described. The experiments have shown that GATE simulations scale very well on a cluster of homogeneous computers. Finally, an elaboration on the deployment of GATE on the Enabling Grids for E-Science in Europe (EGEE) grid will conclude the description of efficiency enhancement efforts. The three aforementioned methods improve the efficiency of GATE to a large extent and make realistic patient-specific overnight Monte Carlo simulations achievable

Dual-gated cardiac PET-clinical feasibility study

Energy Technology Data Exchange (ETDEWEB)

Teraes, Mika; Kokki, Tommi; Noponen, Tommi; Hoppela, Erika; Sipilae, Hannu T.; Knuuti, Juhani [Turku PET Centre, PO BOX 52, Turku (Finland); Durand-Schaefer, Nicolas [General Electric Medical Systems, Buc (France); Pietilae, Mikko [Turku University Hospital, Department of Internal Medicine, Turku (Finland); Kiss, Jan [Turku University Hospital, Department of Surgery, Turku (Finland)

2010-03-15

Both respiratory and cardiac motions reduce image quality in myocardial imaging. For accurate imaging of small structures such as vulnerable coronary plaques, simultaneous cardiac and respiratory gating is warranted. This study tests the feasibility of a recently developed robust method for cardiac-respiratory gating. List-mode data with triggers from respiratory and cardiac cycles are rearranged into dual-gated segments and reconstructed with standard algorithms of a commercial PET/CT scanner. Cardiac gates were defined as three fixed phases and one variable diastolic phase. Chest motion was measured with a respiratory gating device and post-processed to determine gates. Preservation of quantification in dual-gated images was tested with an IEC whole-body phantom. Minipig and human studies were performed to evaluate the feasibility of the method. In minipig studies, a coronary catheter with radioactive tip was guided in coronary artery for in vivo and ex vivo acquisitions. Dual gating in humans with suspected cardiac disorders was performed using 18-F-FDG as a tracer. The method was found feasible for in vivo imaging and the radioactive catheter tip was better resolved in gated images. In human studies, the dual gating was found feasible and easy for clinical routine. Maximal movement of myocardial surface in cranio-caudal direction was over 20 mm. The shape of myocardium was clearly different between the gates and papillary muscles become more visible in diastolic images. The first clinical experiences using robust cardiac-respiratory dual gating are encouraging. Further testing in larger clinical populations using tracers designed especially for plaque imaging is warranted. (orig.)

Dual-gated cardiac PET-clinical feasibility study

International Nuclear Information System (INIS)

Teraes, Mika; Kokki, Tommi; Noponen, Tommi; Hoppela, Erika; Sipilae, Hannu T.; Knuuti, Juhani; Durand-Schaefer, Nicolas; Pietilae, Mikko; Kiss, Jan

2010-01-01

Both respiratory and cardiac motions reduce image quality in myocardial imaging. For accurate imaging of small structures such as vulnerable coronary plaques, simultaneous cardiac and respiratory gating is warranted. This study tests the feasibility of a recently developed robust method for cardiac-respiratory gating. List-mode data with triggers from respiratory and cardiac cycles are rearranged into dual-gated segments and reconstructed with standard algorithms of a commercial PET/CT scanner. Cardiac gates were defined as three fixed phases and one variable diastolic phase. Chest motion was measured with a respiratory gating device and post-processed to determine gates. Preservation of quantification in dual-gated images was tested with an IEC whole-body phantom. Minipig and human studies were performed to evaluate the feasibility of the method. In minipig studies, a coronary catheter with radioactive tip was guided in coronary artery for in vivo and ex vivo acquisitions. Dual gating in humans with suspected cardiac disorders was performed using 18-F-FDG as a tracer. The method was found feasible for in vivo imaging and the radioactive catheter tip was better resolved in gated images. In human studies, the dual gating was found feasible and easy for clinical routine. Maximal movement of myocardial surface in cranio-caudal direction was over 20 mm. The shape of myocardium was clearly different between the gates and papillary muscles become more visible in diastolic images. The first clinical experiences using robust cardiac-respiratory dual gating are encouraging. Further testing in larger clinical populations using tracers designed especially for plaque imaging is warranted. (orig.)

Demonstration of a Quantum Nondemolition Sum Gate

DEFF Research Database (Denmark)

Yoshikawa, J.; Miwa, Y.; Huck, Alexander

2008-01-01

The sum gate is the canonical two-mode gate for universal quantum computation based on continuous quantum variables. It represents the natural analogue to a qubit C-NOT gate. In addition, the continuous-variable gate describes a quantum nondemolition (QND) interaction between the quadrature...

Multi-gated field emitters for a micro-column

International Nuclear Information System (INIS)

Mimura, Hidenori; Kioke, Akifumi; Aoki, Toru; Neo, Yoichiro; Yoshida, Tomoya; Nagao, Masayoshi

2011-01-01

We have developed a multi-gated field emitter (FE) such as a quadruple-gated FE with a three-stacked electrode lens and a quintuple-gated FE with a four-stacked electrode lens. Both the FEs can focus the electron beam. However, the quintuple-gated FE has a stronger electron convergence than the quadruple-gated FE, and a beam crossover is clearly observed for the quintuple-gated FE.

An evaluation of gating window size, delivery method, and composite field dosimetry of respiratory-gated IMRT

International Nuclear Information System (INIS)

Hugo, Geoffrey D.; Agazaryan, Nzhde; Solberg, Timothy D.

2002-01-01

A respiratory gating system has been developed based on a commercial patient positioning system. The purpose of this study is to investigate the ability of the gating system to reproduce normal, nongated IMRT operation and to quantify the errors produced by delivering a nongated IMRT treatment onto a moving target. A moving phantom capable of simultaneous two-dimensional motion was built, and an analytical liver motion function was used to drive the phantom. Studies were performed to assess the effect of gating window size and choice of delivery method (segmented and dynamic multileaf collimation). Additionally, two multiple field IMRT cases were delivered to quantify the error in gated and nongated IMRT with motion. Dosimetric error between nonmoving and moving deliveries is related to gating window size. By reducing the window size, the error can be reduced. Delivery error can be reduced for both dynamic and segmented delivery with gating. For the implementation of dynamic IMRT delivery in this study, dynamic delivery was found to generate larger delivery errors than segmented delivery in most cases studied. For multiple field IMRT delivery, the largest errors were generated in regions where high field modulation was present parallel to the axis of motion. Gating was found to reduce these large errors to clinically acceptable levels

Double optical gating

Science.gov (United States)

Gilbertson, Steve

The observation and control of dynamics in atomic and molecular targets requires the use of laser pulses with duration less than the characteristic timescale of the process which is to be manipulated. For electron dynamics, this time scale is on the order of attoseconds where 1 attosecond = 10 -18 seconds. In order to generate pulses on this time scale, different gating methods have been proposed. The idea is to extract or "gate" a single pulse from an attosecond pulse train and switch off all the other pulses. While previous methods have had some success, they are very difficult to implement and so far very few labs have access to these unique light sources. The purpose of this work is to introduce a new method, called double optical gating (DOG), and to demonstrate its effectiveness at generating high contrast single isolated attosecond pulses from multi-cycle lasers. First, the method is described in detail and is investigated in the spectral domain. The resulting attosecond pulses produced are then temporally characterized through attosecond streaking. A second method of gating, called generalized double optical gating (GDOG), is also introduced. This method allows attosecond pulse generation directly from a carrier-envelope phase un-stabilized laser system for the first time. Next the methods of DOG and GDOG are implemented in attosecond applications like high flux pulses and extreme broadband spectrum generation. Finally, the attosecond pulses themselves are used in experiments. First, an attosecond/femtosecond cross correlation is used for characterization of spatial and temporal properties of femtosecond pulses. Then, an attosecond pump, femtosecond probe experiment is conducted to observe and control electron dynamics in helium for the first time.

Multi detector computed tomography (MDCT) of the aortic root; ECG-gated verses non-ECG-gated examinations

International Nuclear Information System (INIS)

Kristiansen, Joanna; Guenther, Anne; Aalokken, Trond Mogens; Andersen, Rune

2011-01-01

Purpose: Motion artifacts may degrade a conventional CT examination of the ascending aorta and hinder accurate diagnosis. We quantitatively compared retrospectively electrocardiographic (ECG) -gated multi detector computed tomography (MDCT) with non-ECG-gated MDCT in order to demonstrate whether or not one of the methods should be preferred. Method: The study included seventeen patients with surgically reconstructed aortic root and reimplanted coronary arteries. All patients had undergone both non-gated MDCT and retrospectively ECG-gated MDCT employing a stringently modulated tube current with single phase image reconstruction. The incidence of motion artifacts in the left main coronary artery (LM), proximal right coronary artery (RCA), and aortic root and ascending aorta were rated using a four point scale. The effective dose for each scan was calculated and normalized to a 15 cm scan length. Statistical analysis of motion artifacts and radiation dose was performed using Wilcoxon matched pairs signed rank sum test. Results: A significant reduction in motion artifacts was found in all three vessels in images from the retrospectively ECG-gated scans (LM: P = 0.005, RCA: P = 0.015, aorta: P = 0.003). The mean normalized effective radiation dose was 3.69 mSv (±1.03) for the non-ECG-gated scans and 16.37 mSv (±2.53) for the ECG-gated scans. Conclusion: Retrospective ECG-gating with single phase reconstruction significantly reduces the incidence of motion artifacts in the aortic root and the proximal portion of the coronary arteries but at the expense of a fourfold increase in radiation dose.

Cardiac gated ventilation

International Nuclear Information System (INIS)

Hanson, C.W. III; Hoffman, E.A.

1995-01-01

There are several theoretic advantages to synchronizing positive pressure breaths with the cardiac cycle, including the potential for improving distribution of pulmonary and myocardial blood flow and enhancing cardiac output. The authors evaluated the effects of synchronizing respiration to the cardiac cycle using a programmable ventilator and electron beam CT (EBCT) scanning. The hearts of anesthetized dogs were imaged during cardiac gated respiration with a 50 msec scan aperture. Multi slice, short axis, dynamic image data sets spanning the apex to base of the left ventricle were evaluated to determine the volume of the left ventricular chamber at end-diastole and end-systole during apnea, systolic and diastolic cardiac gating. The authors observed an increase in cardiac output of up to 30% with inspiration gated to the systolic phase of the cardiac cycle in a non-failing model of the heart

Double-gated spectral snapshots for biomolecular fluorescence

International Nuclear Information System (INIS)

Nakamura, Ryosuke; Hamada, Norio; Ichida, Hideki; Tokunaga, Fumio; Kanematsu, Yasuo

2007-01-01

A versatile method to take femtosecond spectral snapshots of fluorescence has been developed based on a double gating technique in the combination of an optical Kerr gate and an image intensifier as an electrically driven gate set in front of a charge-coupled device detector. The application of a conventional optical-Kerr-gate method is limited to molecules with the short fluorescence lifetime up to a few hundred picoseconds, because long-lifetime fluorescence itself behaves as a source of the background signal due to insufficiency of the extinction ratio of polarizers employed for the Kerr gate. By using the image intensifier with the gate time of 200 ps, we have successfully suppressed the background signal and overcome the application limit of optical-Kerr-gate method. The system performance has been demonstrated by measuring time-resolved fluorescence spectra for laser dye solution and the riboflavin solution as a typical sample of biomolecule

SU-E-T-350: Verification of Gating Performance of a New Elekta Gating Solution: Response Kit and Catalyst System

Energy Technology Data Exchange (ETDEWEB)

Xie, X; Cao, D; Housley, D; Mehta, V; Shepard, D [Swedish Cancer Institute, Seattle, WA (United States)

2014-06-01

Purpose: In this work, we have tested the performance of new respiratory gating solutions for Elekta linacs. These solutions include the Response gating and the C-RAD Catalyst surface mapping system.Verification measurements have been performed for a series of clinical cases. We also examined the beam on latency of the system and its impact on delivery efficiency. Methods: To verify the benefits of tighter gating windows, a Quasar Respiratory Motion Platform was used. Its vertical-motion plate acted as a respiration surrogate and was tracked by the Catalyst system to generate gating signals. A MatriXX ion-chamber array was mounted on its longitudinal-moving platform. Clinical plans are delivered to a stationary and moving Matrix array at 100%, 50% and 30% gating windows and gamma scores were calculated comparing moving delivery results to the stationary result. It is important to note that as one moves to tighter gating windows, the delivery efficiency will be impacted by the linac's beam-on latency. Using a specialized software package, we generated beam-on signals of lengths of 1000ms, 600ms, 450ms, 400ms, 350ms and 300ms. As the gating windows get tighter, one can expect to reach a point where the dose rate will fall to nearly zero, indicating that the gating window is close to beam-on latency. A clinically useful gating window needs to be significantly longer than the latency for the linac. Results: As expected, the use of tighter gating windows improved delivery accuracy. However, a lower limit of the gating window, largely defined by linac beam-on latency, exists at around 300ms. Conclusion: The Response gating kit, combined with the C-RAD Catalyst, provides an effective solution for respiratorygated treatment delivery. Careful patient selection, gating window design, even visual/audio coaching may be necessary to ensure both delivery quality and efficiency. This research project is funded by Elekta.

Voltage-Gated Potassium Channels: A Structural Examination of Selectivity and Gating

Science.gov (United States)

Kim, Dorothy M.; Nimigean, Crina M.

2016-01-01

Voltage-gated potassium channels play a fundamental role in the generation and propagation of the action potential. The discovery of these channels began with predictions made by early pioneers, and has culminated in their extensive functional and structural characterization by electrophysiological, spectroscopic, and crystallographic studies. With the aid of a variety of crystal structures of these channels, a highly detailed picture emerges of how the voltage-sensing domain reports changes in the membrane electric field and couples this to conformational changes in the activation gate. In addition, high-resolution structural and functional studies of K+ channel pores, such as KcsA and MthK, offer a comprehensive picture on how selectivity is achieved in K+ channels. Here, we illustrate the remarkable features of voltage-gated potassium channels and explain the mechanisms used by these machines with experimental data. PMID:27141052

Audio-visual biofeedback for respiratory-gated radiotherapy: Impact of audio instruction and audio-visual biofeedback on respiratory-gated radiotherapy

International Nuclear Information System (INIS)

George, Rohini; Chung, Theodore D.; Vedam, Sastry S.; Ramakrishnan, Viswanathan; Mohan, Radhe; Weiss, Elisabeth; Keall, Paul J.

2006-01-01

Purpose: Respiratory gating is a commercially available technology for reducing the deleterious effects of motion during imaging and treatment. The efficacy of gating is dependent on the reproducibility within and between respiratory cycles during imaging and treatment. The aim of this study was to determine whether audio-visual biofeedback can improve respiratory reproducibility by decreasing residual motion and therefore increasing the accuracy of gated radiotherapy. Methods and Materials: A total of 331 respiratory traces were collected from 24 lung cancer patients. The protocol consisted of five breathing training sessions spaced about a week apart. Within each session the patients initially breathed without any instruction (free breathing), with audio instructions and with audio-visual biofeedback. Residual motion was quantified by the standard deviation of the respiratory signal within the gating window. Results: Audio-visual biofeedback significantly reduced residual motion compared with free breathing and audio instruction. Displacement-based gating has lower residual motion than phase-based gating. Little reduction in residual motion was found for duty cycles less than 30%; for duty cycles above 50% there was a sharp increase in residual motion. Conclusions: The efficiency and reproducibility of gating can be improved by: incorporating audio-visual biofeedback, using a 30-50% duty cycle, gating during exhalation, and using displacement-based gating

Image quality in non-gated versus gated reconstruction of tongue motion using magnetic resonance imaging: a comparison using automated image processing

Energy Technology Data Exchange (ETDEWEB)

Alvey, Christopher; Orphanidou, C.; Coleman, J.; McIntyre, A.; Golding, S.; Kochanski, G. [University of Oxford, Oxford (United Kingdom)

2008-11-15

The use of gated or ECG triggered MR is a well-established technique and developments in coil technology have enabled this approach to be applied to areas other than the heart. However, the image quality of gated (ECG or cine) versus non-gated or real-time has not been extensively evaluated in the mouth. We evaluate two image sequences by developing an automatic image processing technique which compares how well the image represents known anatomy. Four subjects practised experimental poly-syllabic sentences prior to MR scanning. Using a 1.5 T MR unit, we acquired comparable gated (using an artificial trigger) and non-gated sagittal images during speech. We then used an image processing algorithm to model the image grey along lines that cross the airway. Each line involved an eight parameter non-linear equation to model of proton densities, edges, and dimensions. Gated and non-gated images show similar spatial resolution, with non-gated images being slightly sharper (10% better resolution, less than 1 pixel). However, the gated sequences generated images of substantially lower inherent noise, and substantially better discrimination between air and tissue. Additionally, the gated sequences demonstrate a very much greater temporal resolution. Overall, image quality is better with gated imaging techniques, especially given their superior temporal resolution. Gated techniques are limited by the repeatability of the motions involved, and we have shown that speech to a metronome can be sufficiently repeatable to allow high-quality gated magnetic resonance imaging images. We suggest that gated sequences may be useful for evaluating other types of repetitive movement involving the joints and limb motions. (orig.)

Image quality in non-gated versus gated reconstruction of tongue motion using magnetic resonance imaging: a comparison using automated image processing

International Nuclear Information System (INIS)

Alvey, Christopher; Orphanidou, C.; Coleman, J.; McIntyre, A.; Golding, S.; Kochanski, G.

2008-01-01

The use of gated or ECG triggered MR is a well-established technique and developments in coil technology have enabled this approach to be applied to areas other than the heart. However, the image quality of gated (ECG or cine) versus non-gated or real-time has not been extensively evaluated in the mouth. We evaluate two image sequences by developing an automatic image processing technique which compares how well the image represents known anatomy. Four subjects practised experimental poly-syllabic sentences prior to MR scanning. Using a 1.5 T MR unit, we acquired comparable gated (using an artificial trigger) and non-gated sagittal images during speech. We then used an image processing algorithm to model the image grey along lines that cross the airway. Each line involved an eight parameter non-linear equation to model of proton densities, edges, and dimensions. Gated and non-gated images show similar spatial resolution, with non-gated images being slightly sharper (10% better resolution, less than 1 pixel). However, the gated sequences generated images of substantially lower inherent noise, and substantially better discrimination between air and tissue. Additionally, the gated sequences demonstrate a very much greater temporal resolution. Overall, image quality is better with gated imaging techniques, especially given their superior temporal resolution. Gated techniques are limited by the repeatability of the motions involved, and we have shown that speech to a metronome can be sufficiently repeatable to allow high-quality gated magnetic resonance imaging images. We suggest that gated sequences may be useful for evaluating other types of repetitive movement involving the joints and limb motions. (orig.)

Rapid gated Thallium-201 perfusion SPECT - clinically feasible?

International Nuclear Information System (INIS)

Wadhwa, S.S.; Mansberg, R.; Fernandes, V.B.; Wilkinson, D.; Abatti, D.

1998-01-01

Full text: Standard dose energy window optimised Thallium-201 (Tl-201) SPECT has about half the counts of a standard dose from Technetium-99m Sestamibi (Tc99m-Mibi) gated perfusion SPECT. This study investigates the clinical feasibility of rapid energy window optimised Tl-201 gated perfusion SPECT (gated-TI) and compares quantitative left ventricular ejection fraction (LVEF) and visually assessed image quality for wall motion and thickening to analogous values obtained from Tc99m-Mibi gated perfusion SPECT (gated - mibi). Methods: We studied 60 patients with a rest gated Tl-201 SPECT (100 MBq, 77KeV peak, 34% window, 20 sec/projection) followed by a post stress gated Sestamibi SPECT (1GBq, 140KeV, 20% window, 20 sec/projection) separate dual isotope protocol. LVEF quantitation was performed using commercially available software (SPECTEF, General Electric). Visual grading of image quality for wall thickening and motion was performed using a three-point scale (excellent, good and poor). Results: LVEF for gated Tl-201 SPECT was 59.6 ± 12.0% (Mean ± SD). LVEF for gated Sestamibi SPECT was 60.4 ±11.4% (Mean ± SD). These were not significantly different (P=0.27, T-Test). There was good correlation (r=0.9) between gated-TI and gated-mibi LVEF values. The quality of gated-Tl images was ranked as excellent, good and poor in 12, 50 and 38% of the patients respectively. Image quality was better in gated-mibi SPECT, with ratings of 12, 62 and 26% respectively. Conclusion: Rapid gated Thallium-201 acquisition with energy window optimisation can be effectively performed on majority of patients and offers the opportunity to assess not only myocardial perfusion and function, as with Technetium based agents, but also viability using a single day one isotope protocol

High-fidelity gates in quantum dot spin qubits.

Science.gov (United States)

Koh, Teck Seng; Coppersmith, S N; Friesen, Mark

2013-12-03

Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. The different schemes can be difficult to compare meaningfully. Here we develop a theoretical framework to evaluate disparate qubit-gating schemes on an equal footing. We apply the procedure to two types of double-dot qubits: the singlet-triplet and the semiconducting quantum dot hybrid qubit. We investigate three quantum gates that flip the qubit state: a DC pulsed gate, an AC gate based on logical qubit resonance, and a gate-like process known as stimulated Raman adiabatic passage. These gates are all mediated by an exchange interaction that is controlled experimentally using the interdot tunnel coupling g and the detuning [Symbol: see text], which sets the energy difference between the dots. Our procedure has two steps. First, we optimize the gate fidelity (f) for fixed g as a function of the other control parameters; this yields an f(opt)(g) that is universal for different types of gates. Next, we identify physical constraints on the control parameters; this yields an upper bound f(max) that is specific to the qubit-gate combination. We show that similar gate fidelities (~99:5%) should be attainable for singlet-triplet qubits in isotopically purified Si, and for hybrid qubits in natural Si. Considerably lower fidelities are obtained for GaAs devices, due to the fluctuating magnetic fields ΔB produced by nuclear spins.

Retrospectively ECG-gated multi-detector row CT of the chest: does ECG-gating improve three-dimensional visualization of the bronchial tree?

International Nuclear Information System (INIS)

Schertler, T.; Wildermuth, S.; Willmann, J.K.; Crook, D.W.; Marincek, B.; Boehm, T.

2004-01-01

Purpose: To determine the impact of retrospectively ECG-gated multi-detector row CT (MDCT) on three-dimensional (3D) visualization of the bronchial tree and virtual bronchoscopy (VB) as compared to non-ECG-gated data acquisition. Materials and Methods: Contrast-enhanced retrospectively ECG-gated and non-ECG-gated MDCT of the chest was performed in 25 consecutive patients referred for assessment of coronary artery bypass grafts and pathology of the ascending aorta. ECG-gated MDCT data were reconstructed in diastole using an absolute reverse delay of -400 msec in all patients. In 10 patients additional reconstructions at -200 msec, -300 msec, and -500 msec prior to the R-wave were performed. Shaded surface display (SSD) and virtual bronchoscopy (VB) for visualization of the bronchial segments was performed with ECG-gated and non-ECG-gated MDCT data. The visualization of the bronchial tree underwent blinded scoring. Effective radiation dose and signal-to-noise ratio (SNR) for both techniques were compared. Results: There was no significant difference in visualizing single bronchial segments using ECG-gated compared to non-ECG-gated MDCT data. However, the total sum of scores for all bronchial segments visualized with non-ECG-gated MDCT was significantly higher compared to ECG-gated MDCT (P [de

Gate errors in solid-state quantum-computer architectures

International Nuclear Information System (INIS)

Hu Xuedong; Das Sarma, S.

2002-01-01

We theoretically consider possible errors in solid-state quantum computation due to the interplay of the complex solid-state environment and gate imperfections. In particular, we study two examples of gate operations in the opposite ends of the gate speed spectrum, an adiabatic gate operation in electron-spin-based quantum dot quantum computation and a sudden gate operation in Cooper-pair-box superconducting quantum computation. We evaluate quantitatively the nonadiabatic operation of a two-qubit gate in a two-electron double quantum dot. We also analyze the nonsudden pulse gate in a Cooper-pair-box-based quantum-computer model. In both cases our numerical results show strong influences of the higher excited states of the system on the gate operation, clearly demonstrating the importance of a detailed understanding of the relevant Hilbert-space structure on the quantum-computer operations

Edge-on gating effect in molecular wires.

Science.gov (United States)

Lo, Wai-Yip; Bi, Wuguo; Li, Lianwei; Jung, In Hwan; Yu, Luping

2015-02-11

This work demonstrates edge-on chemical gating effect in molecular wires utilizing the pyridinoparacyclophane (PC) moiety as the gate. Different substituents with varied electronic demands are attached to the gate to simulate the effect of varying gating voltages similar to that in field-effect transistor (FET). It was observed that the orbital energy level and charge carrier's tunneling barriers can be tuned by changing the gating group from strong electron acceptors to strong electron donors. The single molecule conductance and current-voltage characteristics of this molecular system are truly similar to those expected for an actual single molecular transistor.

Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates

Energy Technology Data Exchange (ETDEWEB)

Brennan, Christopher J.; Neumann, Christopher M.; Vitale, Steven A., E-mail: steven.vitale@ll.mit.edu [Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 (United States)

2015-07-28

Fully depleted silicon-on-insulator transistors were fabricated using two different metal gate deposition mechanisms to compare plasma damage effects on gate oxide quality. Devices fabricated with both plasma-enhanced atomic-layer-deposited (PE-ALD) TiN gates and magnetron plasma sputtered TiN gates showed very good electrostatics and short-channel characteristics. However, the gate oxide quality was markedly better for PE-ALD TiN. A significant reduction in interface state density was inferred from capacitance-voltage measurements as well as a 1200× reduction in gate leakage current. A high-power magnetron plasma source produces a much higher energetic ion and vacuum ultra-violet (VUV) photon flux to the wafer compared to a low-power inductively coupled PE-ALD source. The ion and VUV photons produce defect states in the bulk of the gate oxide as well as at the oxide-silicon interface, causing higher leakage and potential reliability degradation.

Opening of the New Gate E - Final Closure of Gate C - New azur «B» type cern access card

CERN Multimedia

Relations with the Host States Service

2004-01-01

Gate E ("Charles de Gaulle Gate") to the Meyrin Site will be open, for those entitled to use it, from 1 November 2004. The opening of this Gate should contribute to relieving congestion not only on the Prévessin - RN84 and Meyrin Route border crossings but also at Gates A and B. As a result, Gate C will be closed indefinitely from 1 November 2004. Providing a direct link between the Meyrin Site and the French territory beyond the fenced part of the CERN site, Gate E is the subject of international agreements between CERN, Switzerland and France, on the basis of which the Director-General has issued the "Rules for the Use of Gate E", (document CERN/DSU-RH/12222 of 27 October 2004; see also the latest news in "publications" at http://www.cern.ch/relations/). The main provisions of these Rules are as follows: Gate E is open from Monday to Friday, except on official CERN holidays, from 7.30 a.m. to 9.30 a.m. for access into the site, and from 4.30 p.m. to 6.30 p.m. for passage out of the site. Persons are aut...

Gate length variation effect on performance of gate-first self-aligned In₀.₅₃Ga₀.₄₇As MOSFET.

Science.gov (United States)

Mohd Razip Wee, Mohd F; Dehzangi, Arash; Bollaert, Sylvain; Wichmann, Nicolas; Majlis, Burhanuddin Y

2013-01-01

A multi-gate n-type In₀.₅₃Ga₀.₄₇As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter such as threshold voltage, high and low voltage transconductance, subthreshold swing and off current are investigated at room temperature. Scaling the gate length revealed good enhancement in all investigated parameters but the negative shift in threshold voltage was observed for shorter gate lengths. The high drain current of 1.13 A/mm and maximum extrinsic transconductance of 678 mS/mm with the field effect mobility of 364 cm(2)/Vs are achieved for the gate length and width of 0.2 µm and 30 µm, respectively. The source/drain overlap length for the device is approximately extracted about 51 nm with the leakage current in order of 10(-8) A. The results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared.

Gate Length Variation Effect on Performance of Gate-First Self-Aligned In0.53Ga0.47As MOSFET

Science.gov (United States)

Mohd Razip Wee, Mohd F.; Dehzangi, Arash; Bollaert, Sylvain; Wichmann, Nicolas; Majlis, Burhanuddin Y.

2013-01-01

A multi-gate n-type In0.53Ga0.47As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter such as threshold voltage, high and low voltage transconductance, subthreshold swing and off current are investigated at room temperature. Scaling the gate length revealed good enhancement in all investigated parameters but the negative shift in threshold voltage was observed for shorter gate lengths. The high drain current of 1.13 A/mm and maximum extrinsic transconductance of 678 mS/mm with the field effect mobility of 364 cm2/Vs are achieved for the gate length and width of 0.2 µm and 30µm, respectively. The source/drain overlap length for the device is approximately extracted about 51 nm with the leakage current in order of 10−8 A. The results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared. PMID:24367548

Gate-first integration of tunable work function metal gates of different thicknesses into high-k metal gates CMOS FinFETs for multi- VTh engineering

KAUST Repository

Hussain, Muhammad Mustafa; Smith, Casey Eben; Harris, Harlan Rusty; Young, Chadwin; Tseng, Hsinghuang; Jammy, Rajarao

2010-01-01

Gate-first integration of tunable work function metal gates of different thicknesses (320 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (VTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering ∼ 40 mV/V), nearly symmetric VTh, low T inv(∼ 1.4 nm), and high Ion(∼780μAμm) for N/PMOS without any intentional strain enhancement. © 2006 IEEE.

Gate-first integration of tunable work function metal gates of different thicknesses into high-k metal gates CMOS FinFETs for multi- VTh engineering

KAUST Repository

Hussain, Muhammad Mustafa

2010-03-01

Gate-first integration of tunable work function metal gates of different thicknesses (320 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (VTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering ∼ 40 mV/V), nearly symmetric VTh, low T inv(∼ 1.4 nm), and high Ion(∼780μAμm) for N/PMOS without any intentional strain enhancement. © 2006 IEEE.

Protected gates for topological quantum field theories

International Nuclear Information System (INIS)

Beverland, Michael E.; Pastawski, Fernando; Preskill, John; Buerschaper, Oliver; Koenig, Robert; Sijher, Sumit

2016-01-01

We study restrictions on locality-preserving unitary logical gates for topological quantum codes in two spatial dimensions. A locality-preserving operation is one which maps local operators to local operators — for example, a constant-depth quantum circuit of geometrically local gates, or evolution for a constant time governed by a geometrically local bounded-strength Hamiltonian. Locality-preserving logical gates of topological codes are intrinsically fault tolerant because spatially localized errors remain localized, and hence sufficiently dilute errors remain correctable. By invoking general properties of two-dimensional topological field theories, we find that the locality-preserving logical gates are severely limited for codes which admit non-abelian anyons, in particular, there are no locality-preserving logical gates on the torus or the sphere with M punctures if the braiding of anyons is computationally universal. Furthermore, for Ising anyons on the M-punctured sphere, locality-preserving gates must be elements of the logical Pauli group. We derive these results by relating logical gates of a topological code to automorphisms of the Verlinde algebra of the corresponding anyon model, and by requiring the logical gates to be compatible with basis changes in the logical Hilbert space arising from local F-moves and the mapping class group

Latest design of gate valves

Energy Technology Data Exchange (ETDEWEB)

Kurzhofer, U.; Stolte, J.; Weyand, M.

1996-12-01

Babcock Sempell, one of the most important valve manufacturers in Europe, has delivered valves for the nuclear power industry since the beginning of the peaceful application of nuclear power in the 1960s. The latest innovation by Babcock Sempell is a gate valve that meets all recent technical requirements of the nuclear power technology. At the moment in the United States, Germany, Sweden, and many other countries, motor-operated gate and globe valves are judged very critically. Besides the absolute control of the so-called {open_quotes}trip failure,{close_quotes} the integrity of all valve parts submitted to operational forces must be maintained. In case of failure of the limit and torque switches, all valve designs have been tested with respect to the quality of guidance of the gate. The guidances (i.e., guides) shall avoid a tilting of the gate during the closing procedure. The gate valve newly designed by Babcock Sempell fulfills all these characteristic criteria. In addition, the valve has cobalt-free seat hardfacing, the suitability of which has been proven by friction tests as well as full-scale blowdown tests at the GAP of Siemens in Karlstein, West Germany. Babcock Sempell was to deliver more than 30 gate valves of this type for 5 Swedish nuclear power stations by autumn 1995. In the presentation, the author will report on the testing performed, qualifications, and sizing criteria which led to the new technical design.

High-Fidelity Single-Shot Toffoli Gate via Quantum Control.

Science.gov (United States)

Zahedinejad, Ehsan; Ghosh, Joydip; Sanders, Barry C

2015-05-22

A single-shot Toffoli, or controlled-controlled-not, gate is desirable for classical and quantum information processing. The Toffoli gate alone is universal for reversible computing and, accompanied by the Hadamard gate, forms a universal gate set for quantum computing. The Toffoli gate is also a key ingredient for (nontopological) quantum error correction. Currently Toffoli gates are achieved by decomposing into sequentially implemented single- and two-qubit gates, which require much longer times and yields lower overall fidelities compared to a single-shot implementation. We develop a quantum-control procedure to construct a single-shot Toffoli gate for three nearest-neighbor-coupled superconducting transmon systems such that the fidelity is 99.9% and is as fast as an entangling two-qubit gate under the same realistic conditions. The gate is achieved by a nongreedy quantum control procedure using our enhanced version of the differential evolution algorithm.

Tunable pulse-shaping with gated graphene nanoribbons

DEFF Research Database (Denmark)

Prokopeva, Ludmila; Emani, Naresh K.; Boltasseva, Alexandra

2014-01-01

We propose a pulse-shaper made of gated graphene nanoribbons. Simulations demonstrate tunable control over the shapes of transmitted and reflected pulses using the gating bias. Initial fabrication and characterization of graphene elements is also discussed.......We propose a pulse-shaper made of gated graphene nanoribbons. Simulations demonstrate tunable control over the shapes of transmitted and reflected pulses using the gating bias. Initial fabrication and characterization of graphene elements is also discussed....

Structured-gate organic field-effect transistors

International Nuclear Information System (INIS)

Aljada, Muhsen; Pandey, Ajay K; Velusamy, Marappan; Burn, Paul L; Meredith, Paul; Namdas, Ebinazar B

2012-01-01

We report the fabrication and electrical characteristics of structured-gate organic field-effect transistors consisting of a gate electrode patterned with three-dimensional pillars. The pillar gate electrode was over-coated with a gate dielectric (SiO 2 ) and solution processed organic semiconductors producing both unipolar p-type and bipolar behaviour. We show that this new structured-gate architecture delivers higher source-drain currents, higher gate capacitance per unit equivalent linear channel area, and enhanced charge injection (electrons and/or holes) versus the conventional planar structure in all modes of operation. For the bipolar field-effect transistor (FET) the maximum source-drain current enhancements in p- and n-channel mode were >600% and 28%, respectively, leading to p and n charge mobilities with the same order of magnitude. Thus, we have demonstrated that it is possible to use the FET architecture to manipulate and match carrier mobilities of material combinations where one charge carrier is normally dominant. Mobility matching is advantageous for creating organic logic circuit elements such as inverters and amplifiers. Hence, the method represents a facile and generic strategy for improving the performance of standard organic semiconductors as well as new materials and blends. (paper)

Structured-gate organic field-effect transistors

Science.gov (United States)

Aljada, Muhsen; Pandey, Ajay K.; Velusamy, Marappan; Burn, Paul L.; Meredith, Paul; Namdas, Ebinazar B.

2012-06-01

We report the fabrication and electrical characteristics of structured-gate organic field-effect transistors consisting of a gate electrode patterned with three-dimensional pillars. The pillar gate electrode was over-coated with a gate dielectric (SiO2) and solution processed organic semiconductors producing both unipolar p-type and bipolar behaviour. We show that this new structured-gate architecture delivers higher source-drain currents, higher gate capacitance per unit equivalent linear channel area, and enhanced charge injection (electrons and/or holes) versus the conventional planar structure in all modes of operation. For the bipolar field-effect transistor (FET) the maximum source-drain current enhancements in p- and n-channel mode were >600% and 28%, respectively, leading to p and n charge mobilities with the same order of magnitude. Thus, we have demonstrated that it is possible to use the FET architecture to manipulate and match carrier mobilities of material combinations where one charge carrier is normally dominant. Mobility matching is advantageous for creating organic logic circuit elements such as inverters and amplifiers. Hence, the method represents a facile and generic strategy for improving the performance of standard organic semiconductors as well as new materials and blends.

Amplifying genetic logic gates.

Science.gov (United States)

Bonnet, Jerome; Yin, Peter; Ortiz, Monica E; Subsoontorn, Pakpoom; Endy, Drew

2013-05-03

Organisms must process information encoded via developmental and environmental signals to survive and reproduce. Researchers have also engineered synthetic genetic logic to realize simpler, independent control of biological processes. We developed a three-terminal device architecture, termed the transcriptor, that uses bacteriophage serine integrases to control the flow of RNA polymerase along DNA. Integrase-mediated inversion or deletion of DNA encoding transcription terminators or a promoter modulates transcription rates. We realized permanent amplifying AND, NAND, OR, XOR, NOR, and XNOR gates actuated across common control signal ranges and sequential logic supporting autonomous cell-cell communication of DNA encoding distinct logic-gate states. The single-layer digital logic architecture developed here enables engineering of amplifying logic gates to control transcription rates within and across diverse organisms.

Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors

Science.gov (United States)

Mao, Ling-Feng; Ning, Huansheng; Huo, Zong-Liang; Wang, Jin-Yan

2015-12-01

A new physical model of the gate controlled Schottky barrier height (SBH) lowering in top-gated graphene field-effect transistors (GFETs) under saturation bias condition is proposed based on the energy conservation equation with the balance assumption. The theoretical prediction of the SBH lowering agrees well with the experimental data reported in literatures. The reduction of the SBH increases with the increasing of gate voltage and relative dielectric constant of the gate oxide, while it decreases with the increasing of oxide thickness, channel length and acceptor density. The magnitude of the reduction is slightly enhanced under high drain voltage. Moreover, it is found that the gate oxide materials with large relative dielectric constant (>20) have a significant effect on the gate controlled SBH lowering, implying that the energy relaxation of channel electrons should be taken into account for modeling SBH in GFETs.

Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors.

Science.gov (United States)

Mao, Ling-Feng; Ning, Huansheng; Huo, Zong-Liang; Wang, Jin-Yan

2015-12-17

A new physical model of the gate controlled Schottky barrier height (SBH) lowering in top-gated graphene field-effect transistors (GFETs) under saturation bias condition is proposed based on the energy conservation equation with the balance assumption. The theoretical prediction of the SBH lowering agrees well with the experimental data reported in literatures. The reduction of the SBH increases with the increasing of gate voltage and relative dielectric constant of the gate oxide, while it decreases with the increasing of oxide thickness, channel length and acceptor density. The magnitude of the reduction is slightly enhanced under high drain voltage. Moreover, it is found that the gate oxide materials with large relative dielectric constant (>20) have a significant effect on the gate controlled SBH lowering, implying that the energy relaxation of channel electrons should be taken into account for modeling SBH in GFETs.

A bistable electromagnetically actuated rotary gate microvalve

International Nuclear Information System (INIS)

Luharuka, Rajesh; Hesketh, Peter J

2008-01-01

Two types of rotary gate microvalves are developed for flow modulation in microfluidic systems. These microvalves have been tested for an open flow rate of up to 100 sccm and operate under a differential pressure of 6 psig with flow modulation of up to 100. The microvalve consists of a suspended gate that rotates in the plane of the chip to regulate flow through the orifice. The gate is suspended by a novel fully compliant in-plane rotary bistable micromechanism (IPRBM) that advantageously constrains the gate in all degrees of freedom except for in-plane rotational motion. Multiple inlet/outlet orifices provide flexibility of operating the microvalve in three different flow configurations. The rotary gate microvalve is switched with an external electromagnetic actuator. The suspended gate is made of a soft magnetic material and its electromagnetic actuation is based on the operating principle of a variable-reluctance stepper motor

Piezoconductivity of gated suspended graphene

NARCIS (Netherlands)

Medvedyeva, M.V.; Blanter, Y.M.

2011-01-01

We investigate the conductivity of graphene sheet deformed over a gate. The effect of the deformation on the conductivity is twofold: The lattice distortion can be represented as pseudovector potential in the Dirac equation formalism, whereas the gate causes inhomogeneous density redistribution. We

Restless Tuneup of High-Fidelity Qubit Gates

Science.gov (United States)

Rol, M. A.; Bultink, C. C.; O'Brien, T. E.; de Jong, S. R.; Theis, L. S.; Fu, X.; Luthi, F.; Vermeulen, R. F. L.; de Sterke, J. C.; Bruno, A.; Deurloo, D.; Schouten, R. N.; Wilhelm, F. K.; DiCarlo, L.

2017-04-01

We present a tuneup protocol for qubit gates with tenfold speedup over traditional methods reliant on qubit initialization by energy relaxation. This speedup is achieved by constructing a cost function for Nelder-Mead optimization from real-time correlation of nondemolition measurements interleaving gate operations without pause. Applying the protocol on a transmon qubit achieves 0.999 average Clifford fidelity in one minute, as independently verified using randomized benchmarking and gate-set tomography. The adjustable sensitivity of the cost function allows the detection of fractional changes in the gate error with a nearly constant signal-to-noise ratio. The restless concept demonstrated can be readily extended to the tuneup of two-qubit gates and measurement operations.

Light-effect transistor (LET with multiple independent gating controls for optical logic gates and optical amplification

Directory of Open Access Journals (Sweden)

Jason eMarmon

2016-03-01

Full Text Available Modern electronics are developing electronic-optical integrated circuits, while their electronic backbone, e.g. field-effect transistors (FETs, remains the same. However, further FET down scaling is facing physical and technical challenges. A light-effect transistor (LET offers electronic-optical hybridization at the component level, which can continue Moore’s law to quantum region without requiring a FET’s fabrication complexity, e.g. physical gate and doping, by employing optical gating and photoconductivity. Multiple independent gates are therefore readily realized to achieve unique functionalities without increasing chip space. Here we report LET device characteristics and novel digital and analog applications, such as optical logic gates and optical amplification. Prototype CdSe-nanowire-based LETs show output and transfer characteristics resembling advanced FETs, e.g. on/off ratios up to ~1.0x106 with a source-drain voltage of ~1.43 V, gate-power of ~260 nW, and subthreshold swing of ~0.3 nW/decade (excluding losses. Our work offers new electronic-optical integration strategies and electronic and optical computing approaches.

Implementation of a two-qubit controlled-rotation gate based on unconventional geometric phase with a constant gating time

International Nuclear Information System (INIS)

Yabu-uti, B.F.C.; Roversi, J.A.

2011-01-01

We propose an alternative scheme to implement a two-qubit controlled-R (rotation) gate in the hybrid atom-CCA (coupled cavities array) system. Our scheme results in a constant gating time and, with an adjustable qubit-bus coupling (atom-resonator), one can specify a particular rotation R on the target qubit. We believe that this proposal may open promising perspectives for networking quantum information processors and implementing distributed and scalable quantum computation. -- Highlights: → We propose an alternative two-qubit controlled-rotation gate implementation. → Our gate is realized in a constant gating time for any rotation. → A particular rotation on the target qubit can be specified by an adjustable qubit-bus coupling. → Our proposal may open promising perspectives for implementing distributed and scalable quantum computation.

Dual-gated volumetric modulated arc therapy

International Nuclear Information System (INIS)

Fahimian, Benjamin; Wu, Junqing; Wu, Huanmei; Geneser, Sarah; Xing, Lei

2014-01-01

Gated Volumetric Modulated Arc Therapy (VMAT) is an emerging radiation therapy modality for treatment of tumors affected by respiratory motion. However, gating significantly prolongs the treatment time, as delivery is only activated during a single respiratory phase. To enhance the efficiency of gated VMAT delivery, a novel dual-gated VMAT (DG-VMAT) technique, in which delivery is executed at both exhale and inhale phases in a given arc rotation, is developed and experimentally evaluated. Arc delivery at two phases is realized by sequentially interleaving control points consisting of MUs, MLC sequences, and angles of VMAT plans generated at the exhale and inhale phases. Dual-gated delivery is initiated when a respiration gating signal enters the exhale window; when the exhale delivery concludes, the beam turns off and the gantry rolls back to the starting position for the inhale window. The process is then repeated until both inhale and exhale arcs are fully delivered. DG-VMAT plan delivery accuracy was assessed using a pinpoint chamber and diode array phantom undergoing programmed motion. DG-VMAT delivery was experimentally implemented through custom XML scripting in Varian’s TrueBeam™ STx Developer Mode. Relative to single gated delivery at exhale, the treatment time was improved by 95.5% for a sinusoidal breathing pattern. The pinpoint chamber dose measurement agreed with the calculated dose within 0.7%. For the DG-VMAT delivery, 97.5% of the diode array measurements passed the 3%/3 mm gamma criterion. The feasibility of DG-VMAT delivery scheme has been experimentally demonstrated for the first time. By leveraging the stability and natural pauses that occur at end-inspiration and end-exhalation, DG-VMAT provides a practical method for enhancing gated delivery efficiency by up to a factor of two

Cognitive mechanisms associated with auditory sensory gating

Science.gov (United States)

Jones, L.A.; Hills, P.J.; Dick, K.M.; Jones, S.P.; Bright, P.

2016-01-01

Sensory gating is a neurophysiological measure of inhibition that is characterised by a reduction in the P50 event-related potential to a repeated identical stimulus. The objective of this work was to determine the cognitive mechanisms that relate to the neurological phenomenon of auditory sensory gating. Sixty participants underwent a battery of 10 cognitive tasks, including qualitatively different measures of attentional inhibition, working memory, and fluid intelligence. Participants additionally completed a paired-stimulus paradigm as a measure of auditory sensory gating. A correlational analysis revealed that several tasks correlated significantly with sensory gating. However once fluid intelligence and working memory were accounted for, only a measure of latent inhibition and accuracy scores on the continuous performance task showed significant sensitivity to sensory gating. We conclude that sensory gating reflects the identification of goal-irrelevant information at the encoding (input) stage and the subsequent ability to selectively attend to goal-relevant information based on that previous identification. PMID:26716891

Experimental superposition of orders of quantum gates

Science.gov (United States)

Procopio, Lorenzo M.; Moqanaki, Amir; Araújo, Mateus; Costa, Fabio; Alonso Calafell, Irati; Dowd, Emma G.; Hamel, Deny R.; Rozema, Lee A.; Brukner, Časlav; Walther, Philip

2015-01-01

Quantum computers achieve a speed-up by placing quantum bits (qubits) in superpositions of different states. However, it has recently been appreciated that quantum mechanics also allows one to ‘superimpose different operations'. Furthermore, it has been shown that using a qubit to coherently control the gate order allows one to accomplish a task—determining if two gates commute or anti-commute—with fewer gate uses than any known quantum algorithm. Here we experimentally demonstrate this advantage, in a photonic context, using a second qubit to control the order in which two gates are applied to a first qubit. We create the required superposition of gate orders by using additional degrees of freedom of the photons encoding our qubits. The new resource we exploit can be interpreted as a superposition of causal orders, and could allow quantum algorithms to be implemented with an efficiency unlikely to be achieved on a fixed-gate-order quantum computer. PMID:26250107

Getting started with FortiGate

CERN Document Server

Fabbri, Rosato

2013-01-01

This book is a step-by-step tutorial that will teach you everything you need to know about the deployment and management of FortiGate, including high availability, complex routing, various kinds of VPN working, user authentication, security rules and controls on applications, and mail and Internet access.This book is intended for network administrators, security managers, and IT pros. It is a great starting point if you have to administer or configure a FortiGate unit, especially if you have no previous experience. For people that have never managed a FortiGate unit, the book helpfully walks t

Methodology for Analysis, Modeling and Simulation of Airport Gate-waiting Delays

Science.gov (United States)

Wang, Jianfeng

This dissertation presents methodologies to estimate gate-waiting delays from historical data, to identify gate-waiting-delay functional causes in major U.S. airports, and to evaluate the impact of gate operation disruptions and mitigation strategies on gate-waiting delay. Airport gates are a resource of congestion in the air transportation system. When an arriving flight cannot pull into its gate, the delay it experiences is called gate-waiting delay. Some possible reasons for gate-waiting delay are: the gate is occupied, gate staff or equipment is unavailable, the weather prevents the use of the gate (e.g. lightning), or the airline has a preferred gate assignment. Gate-waiting delays potentially stay with the aircraft throughout the day (unless they are absorbed), adding costs to passengers and the airlines. As the volume of flights increases, ensuring that airport gates do not become a choke point of the system is critical. The first part of the dissertation presents a methodology for estimating gate-waiting delays based on historical, publicly available sources. Analysis of gate-waiting delays at major U.S. airports in the summer of 2007 identifies the following. (i) Gate-waiting delay is not a significant problem on majority of days; however, the worst delay days (e.g. 4% of the days at LGA) are extreme outliers. (ii) The Atlanta International Airport (ATL), the John F. Kennedy International Airport (JFK), the Dallas/Fort Worth International Airport (DFW) and the Philadelphia International Airport (PHL) experience the highest gate-waiting delays among major U.S. airports. (iii) There is a significant gate-waiting-delay difference between airlines due to a disproportional gate allocation. (iv) Gate-waiting delay is sensitive to time of a day and schedule peaks. According to basic principles of queueing theory, gate-waiting delay can be attributed to over-scheduling, higher-than-scheduled arrival rate, longer-than-scheduled gate-occupancy time, and reduced gate

Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

Science.gov (United States)

An, Yanbin; Shekhawat, Aniruddh; Behnam, Ashkan; Pop, Eric; Ural, Ant

2016-11-01

Metal-oxide-semiconductor (MOS) devices with graphene as the metal gate electrode, silicon dioxide with thicknesses ranging from 5 to 20 nm as the dielectric, and p-type silicon as the semiconductor are fabricated and characterized. It is found that Fowler-Nordheim (F-N) tunneling dominates the gate tunneling current in these devices for oxide thicknesses of 10 nm and larger, whereas for devices with 5 nm oxide, direct tunneling starts to play a role in determining the total gate current. Furthermore, the temperature dependences of the F-N tunneling current for the 10 nm devices are characterized in the temperature range 77-300 K. The F-N coefficients and the effective tunneling barrier height are extracted as a function of temperature. It is found that the effective barrier height decreases with increasing temperature, which is in agreement with the results previously reported for conventional MOS devices with polysilicon or metal gate electrodes. In addition, high frequency capacitance-voltage measurements of these MOS devices are performed, which depict a local capacitance minimum under accumulation for thin oxides. By analyzing the data using numerical calculations based on the modified density of states of graphene in the presence of charged impurities, it is shown that this local minimum is due to the contribution of the quantum capacitance of graphene. Finally, the workfunction of the graphene gate electrode is extracted by determining the flat-band voltage as a function of oxide thickness. These results show that graphene is a promising candidate as the gate electrode in metal-oxide-semiconductor devices.

Precise linear gating circuit on integrated microcircuits

Energy Technology Data Exchange (ETDEWEB)

Butskii, V.V.; Vetokhin, S.S.; Reznikov, I.V.

Precise linear gating circuit on four microcircuits is described. A basic flowsheet of the gating circuit is given. The gating circuit consists of two input differential cascades total load of which is two current followers possessing low input and high output resistances. Follower outlets are connected to high ohmic dynamic load formed with a current source which permits to get high amplification (>1000) at one cascade. Nonlinearity amounts to <0.1% in the range of input signal amplitudes of -10-+10 V. Front duration for an output signal with 10 V amplitude amounts to 100 ns. Attenuation of input signal with a closed gating circuit is 60 db. The gating circuits described is used in the device intended for processing of scintillation sensor signals.

Bubble gate for in-plane flow control.

Science.gov (United States)

Oskooei, Ali; Abolhasani, Milad; Günther, Axel

2013-07-07

We introduce a miniature gate valve as a readily implementable strategy for actively controlling the flow of liquids on-chip, within a footprint of less than one square millimetre. Bubble gates provide for simple, consistent and scalable control of liquid flow in microchannel networks, are compatible with different bulk microfabrication processes and substrate materials, and require neither electrodes nor moving parts. A bubble gate consists of two microchannel sections: a liquid-filled channel and a gas channel that intercepts the liquid channel to form a T-junction. The open or closed state of a bubble gate is determined by selecting between two distinct gas pressure levels: the lower level corresponds to the "open" state while the higher level corresponds to the "closed" state. During closure, a gas bubble penetrates from the gas channel into the liquid, flanked by a column of equidistantly spaced micropillars on each side, until the flow of liquid is completely obstructed. We fabricated bubble gates using single-layer soft lithographic and bulk silicon micromachining procedures and evaluated their performance with a combination of theory and experimentation. We assessed the dynamic behaviour during more than 300 open-and-close cycles and report the operating pressure envelope for different bubble gate configurations and for the working fluids: de-ionized water, ethanol and a biological buffer. We obtained excellent agreement between the experimentally determined bubble gate operational envelope and a theoretical prediction based on static wetting behaviour. We report case studies that serve to illustrate the utility of bubble gates for liquid sampling in single and multi-layer microfluidic devices. Scalability of our strategy was demonstrated by simultaneously addressing 128 bubble gates.

High speed gated x-ray imagers

International Nuclear Information System (INIS)

Kilkenny, J.D.; Bell, P.; Hanks, R.; Power, G.; Turner, R.E.; Wiedwald, J.

1988-01-01

Single and multi-frame gated x-ray images with time-resolution as fast as 150 psec are described. These systems are based on the gating of microchannel plates in a stripline configuration. The gating voltage comes from the avalanche breakdown of reverse biased p-n junction producing high power voltage pulses as short as 70 psec. Results from single and four frame x-ray cameras used on Nova are described. 8 refs., 9 figs

Respiratory gating and multi field technique radiotherapy for esophageal cancer

International Nuclear Information System (INIS)

Ohta, Atsushi; Kaidu, Motoki; Tanabe, Satoshi

2017-01-01

To investigate the effects of a respiratory gating and multi field technique on the dose-volume histogram (DVH) in radiotherapy for esophageal cancer. Twenty patients who underwent four-dimensional computed tomography for esophageal cancer were included. We retrospectively created the four treatment plans for each patient, with or without the respiratory gating and multi field technique: No gating-2-field, No gating-4-field, Gating-2-field, and Gating-4-field plans. We compared the DVH parameters of the lung and heart in the No gating-2-field plan with the other three plans.Result In the comparison of the parameters in the No gating-2-field plan, there are significant differences in the Lung V 5Gy , V 20Gy , mean dose with all three plans and the Heart V 25Gy -V 40Gy with Gating-2-field plan, V 35Gy , V 40Gy , mean dose with No Gating-4-field plan and V 30Gy -V 40Gy , and mean dose with Gating-4-field plan. The lung parameters were smaller in the Gating-2-field plan and larger in the No gating-4-field and Gating-4-field plans. The heart parameters were all larger in the No gating-2-field plan. The lung parameters were reduced by the respiratory gating technique and increased by the multi field technique. The heart parameters were reduced by both techniques. It is important to select the optimal technique according to the risk of complications. (author)

Air-gating and chemical-gating in transistors and sensing devices made from hollow TiO2 semiconductor nanotubes

Science.gov (United States)

Alivov, Yahya; Funke, Hans; Nagpal, Prashant

2015-07-01

Rapid miniaturization of electronic devices down to the nanoscale, according to Moore’s law, has led to some undesirable effects like high leakage current in transistors, which can offset additional benefits from scaling down. Development of three-dimensional transistors, by spatial extension in the third dimension, has allowed higher contact area with a gate electrode and better control over conductivity in the semiconductor channel. However, these devices do not utilize the large surface area and interfaces for new electronic functionality. Here, we demonstrate air gating and chemical gating in hollow semiconductor nanotube devices and highlight the potential for development of novel transistors that can be modulated using channel bias, gate voltage, chemical composition, and concentration. Using chemical gating, we reversibly altered the conductivity of nanoscaled semiconductor nanotubes (10-500 nm TiO2 nanotubes) by six orders of magnitude, with a tunable rectification factor (ON/OFF ratio) ranging from 1-106. While demonstrated air- and chemical-gating speeds were slow here (˜seconds) due to the mechanical-evacuation rate and size of our chamber, the small nanoscale volume of these hollow semiconductors can enable much higher switching speeds, limited by the rate of adsorption/desorption of molecules at semiconductor interfaces. These chemical-gating effects are completely reversible, additive between different chemical compositions, and can enable semiconductor nanoelectronic devices for ‘chemical transistors’, ‘chemical diodes’, and very high-efficiency sensing applications.

Gate replacement at the Upper Lake Falls development

International Nuclear Information System (INIS)

Chen, C.T.; Locke, A.E.; Brown, E.R.

1998-01-01

Nova Scotia Power's integrated approach to dam safety was discussed. One of the two intake gates at Unit 1 of the Upper Falls Power Plant on the Mersey River was replaced in 1997 as part of the Utility's upgrading program. In the event of governor failure or turbine runaway, the new roller gate will allow operators to close the original sliding gate first under a more-or-less balanced head condition, and then to close the new roller gate under a full-flow condition. The planning, design and construction of the new roller gate is described. One of the two head gates of Unit 2 at the same station will be replaced in a similar fashion in the fall of 1998. 4 refs., 7 figs

Gate valve performance prediction

International Nuclear Information System (INIS)

Harrison, D.H.; Damerell, P.S.; Wang, J.K.; Kalsi, M.S.; Wolfe, K.J.

1994-01-01

The Electric Power Research Institute is carrying out a program to improve the performance prediction methods for motor-operated valves. As part of this program, an analytical method to predict the stem thrust required to stroke a gate valve has been developed and has been assessed against data from gate valve tests. The method accounts for the loads applied to the disc by fluid flow and for the detailed mechanical interaction of the stem, disc, guides, and seats. To support development of the method, two separate-effects test programs were carried out. One test program determined friction coefficients for contacts between gate valve parts by using material specimens in controlled environments. The other test program investigated the interaction of the stem, disc, guides, and seat using a special fixture with full-sized gate valve parts. The method has been assessed against flow-loop and in-plant test data. These tests include valve sizes from 3 to 18 in. and cover a considerable range of flow, temperature, and differential pressure. Stem thrust predictions for the method bound measured results. In some cases, the bounding predictions are substantially higher than the stem loads required for valve operation, as a result of the bounding nature of the friction coefficients in the method

Double-disc gate valve

International Nuclear Information System (INIS)

Wheatley, S.J.

1979-01-01

The invention relates to an improvement in a conventional double-disc gate valve having a vertically movable gate assembly including a wedge, spreaders slidably engaged therewith, a valve disc carried by the spreaders. When the gate assembly is lowered to a selected point in the valve casing, the valve discs are moved transversely outward to close inlet and outlet ports in the casing. The valve includes hold-down means for guiding the disc-and-spreader assemblies as they are moved transversely outward and inward. If such valves are operated at relatively high differential pressures, they sometimes jam during opening. Such jamming has been a problem for many years in gate valves used in gaseous diffusion plants for the separation of uranium isotopes. The invention is based on the finding that the above-mentioned jamming results when the outlet disc tilts about its horizontal axis in a certain way during opening of the valve. In accordance with the invention, tilting of the outlet disc is maintained at a tolerable value by providing the disc with a rigid downwardly extending member and by providing the casing with a stop for limiting inward arcuate movement of the member to a preselected value during opening of the valve

Rapidly reconfigurable all-optical universal logic gate

Science.gov (United States)

Goddard, Lynford L.; Bond, Tiziana C.; Kallman, Jeffrey S.

2010-09-07

A new reconfigurable cascadable all-optical on-chip device is presented. The gate operates by combining the Vernier effect with a novel effect, the gain-index lever, to help shift the dominant lasing mode from a mode where the laser light is output at one facet to a mode where it is output at the other facet. Since the laser remains above threshold, the speed of the gate for logic operations as well as for reprogramming the function of the gate is primarily limited to the small signal optical modulation speed of the laser, which can be on the order of up to about tens of GHz. The gate can be rapidly and repeatedly reprogrammed to perform any of the basic digital logic operations by using an appropriate analog optical or electrical signal at the gate selection port. Other all-optical functionality includes wavelength conversion, signal duplication, threshold switching, analog to digital conversion, digital to analog conversion, signal routing, and environment sensing. Since each gate can perform different operations, the functionality of such a cascaded circuit grows exponentially.

VKCDB: Voltage-gated potassium channel database

Directory of Open Access Journals (Sweden)

Gallin Warren J

2004-01-01

Full Text Available Abstract Background The family of voltage-gated potassium channels comprises a functionally diverse group of membrane proteins. They help maintain and regulate the potassium ion-based component of the membrane potential and are thus central to many critical physiological processes. VKCDB (Voltage-gated potassium [K] Channel DataBase is a database of structural and functional data on these channels. It is designed as a resource for research on the molecular basis of voltage-gated potassium channel function. Description Voltage-gated potassium channel sequences were identified by using BLASTP to search GENBANK and SWISSPROT. Annotations for all voltage-gated potassium channels were selectively parsed and integrated into VKCDB. Electrophysiological and pharmacological data for the channels were collected from published journal articles. Transmembrane domain predictions by TMHMM and PHD are included for each VKCDB entry. Multiple sequence alignments of conserved domains of channels of the four Kv families and the KCNQ family are also included. Currently VKCDB contains 346 channel entries. It can be browsed and searched using a set of functionally relevant categories. Protein sequences can also be searched using a local BLAST engine. Conclusions VKCDB is a resource for comparative studies of voltage-gated potassium channels. The methods used to construct VKCDB are general; they can be used to create specialized databases for other protein families. VKCDB is accessible at http://vkcdb.biology.ualberta.ca.

Penn State DOE GATE Program

Energy Technology Data Exchange (ETDEWEB)

Anstrom, Joel

2012-08-31

The Graduate Automotive Technology Education (GATE) Program at The Pennsylvania State University (Penn State) was established in October 1998 pursuant to an award from the U.S. Department of Energy (U.S. DOE). The focus area of the Penn State GATE Program is advanced energy storage systems for electric and hybrid vehicles.

Implementation of a funnel-and-gate remediation system

International Nuclear Information System (INIS)

O'Brien, K.; Keyes, G.; Sherman, N.

1997-01-01

A funnel-and-gate trademark system incorporating activated carbon was deemed the most attractive remediation method for an active lumber mill in the western United States. Petroleum hydrocarbons, chlorinated solvents, pentachlorophenol, and tetrachlorophenol were detected in on-site groundwater samples. The shallow aquifer consists of a heterogeneous mixture of marine deposits and artificial fill, underlain by low-permeability siltstones and mudstone. In the funnel-and-gate trademark system, a low-permeability cutoff wall was installed to funnel groundwater flow to a smaller area (a open-quotes gateclose quotes) where a passive below-grade treatment system treats the plume as it flows through the gate. Groundwater flow modeling focused on the inhomogeneities of the aquifer and the spatial relationship between gate(s) and barrier walls. The gate design incorporates several factors, including contaminant concentration, flow rate, and time between carbon changeouts. To minimize back pressure and maximize residence time, each gate was designed using 1.25-meter (4-foot) diameter corrugated metal pipe filled with a 1.25-meter (4-foot) thick bed of activated carbon. The configuration will allow water to flow through the treatment gates without pumps. The installed system is 190 meters (625 feet) long and treats approximately 76 L/min (20 gpm) during the winter months

Universal Fault-Tolerant Gates on Concatenated Stabilizer Codes

Directory of Open Access Journals (Sweden)

Theodore J. Yoder

2016-09-01

Full Text Available It is an oft-cited fact that no quantum code can support a set of fault-tolerant logical gates that is both universal and transversal. This no-go theorem is generally responsible for the interest in alternative universality constructions including magic state distillation. Widely overlooked, however, is the possibility of nontransversal, yet still fault-tolerant, gates that work directly on small quantum codes. Here, we demonstrate precisely the existence of such gates. In particular, we show how the limits of nontransversality can be overcome by performing rounds of intermediate error correction to create logical gates on stabilizer codes that use no ancillas other than those required for syndrome measurement. Moreover, the logical gates we construct, the most prominent examples being Toffoli and controlled-controlled-Z, often complete universal gate sets on their codes. We detail such universal constructions for the smallest quantum codes, the 5-qubit and 7-qubit codes, and then proceed to generalize the approach. One remarkable result of this generalization is that any nondegenerate stabilizer code with a complete set of fault-tolerant single-qubit Clifford gates has a universal set of fault-tolerant gates. Another is the interaction of logical qubits across different stabilizer codes, which, for instance, implies a broadly applicable method of code switching.

Cleaning Challenges of High-κ/Metal Gate Structures

KAUST Repository

Hussain, Muhammad Mustafa; Shamiryan, Denis G.; Paraschiv, Vasile; Sano, Kenichi; Reinhardt, Karen A.

2010-01-01

High-κ/metal gates are used as transistors for advanced logic applications to improve speed and eliminate electrical issues associated with polySi and SiO2 gates. Various integration schemes are possible and will be discussed, such as dual gate, gate-first, and gate-last, both of which require specialized cleaning and etching steps. Specific areas of discussion will include cleaning and conditioning of the silicon surface, forming a high-quality chemical oxide, removal of the high-κ dielectric with selectivity to the SiO2 layer, cleaning and residue removal after etching, and prevention of galvanic corrosion during cleaning. © 2011 Scrivener Publishing LLC. All rights reserved.

Cleaning Challenges of High-κ/Metal Gate Structures

KAUST Repository

Hussain, Muhammad Mustafa

2010-12-20

High-κ/metal gates are used as transistors for advanced logic applications to improve speed and eliminate electrical issues associated with polySi and SiO2 gates. Various integration schemes are possible and will be discussed, such as dual gate, gate-first, and gate-last, both of which require specialized cleaning and etching steps. Specific areas of discussion will include cleaning and conditioning of the silicon surface, forming a high-quality chemical oxide, removal of the high-κ dielectric with selectivity to the SiO2 layer, cleaning and residue removal after etching, and prevention of galvanic corrosion during cleaning. © 2011 Scrivener Publishing LLC. All rights reserved.

Contribución al conocimiento de la fauna de himenópteros inquilinos y parásitos en las agallas de diplolepis mayri (schlechtendal) y diplolepis eglanteriae (hartig) (hym., cynipidae)

OpenAIRE

Nieves-Aldrey, J. L.

1984-01-01

[EN] We studied the hymenopterous inquilin and parasite faunas inhabiting cynipid galls on Rosa produced by Diplolepis mayri (SCHL.) and Diplolepis eglanteriae (HTG.) in the spanish provinces of Salamanca and Madrid. Associated with D. mayri (SeHL.) we have found nine species: Periclistus brandtii (RATZ.), 01'thopclma mediator (THUMB.), Eurytoma rosae NEES, Torymus bedeguaris (L.), Gliphomerus stigma (FAB.), Pteromalus bedeguaris (THOMSON), Caenacis inflexa (RATz.). Eupelmus urosonus DA...

High frequency MOSFET gate drivers technologies and applications

CERN Document Server

Zhang, Zhiliang

2017-01-01

This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices.

The clinical implementation of respiratory-gated intensity-modulated radiotherapy

International Nuclear Information System (INIS)

Keall, Paul; Vedam, Sastry; George, Rohini; Bartee, Chris; Siebers, Jeffrey; Lerma, Fritz; Weiss, Elisabeth; Chung, Theodore

2006-01-01

The clinical use of respiratory-gated radiotherapy and the application of intensity-modulated radiotherapy (IMRT) are 2 relatively new innovations to the treatment of lung cancer. Respiratory gating can reduce the deleterious effects of intrafraction motion, and IMRT can concurrently increase tumor dose homogeneity and reduce dose to critical structures including the lungs, spinal cord, esophagus, and heart. The aim of this work is to describe the clinical implementation of respiratory-gated IMRT for the treatment of non-small cell lung cancer. Documented clinical procedures were developed to include a tumor motion study, gated CT imaging, IMRT treatment planning, and gated IMRT delivery. Treatment planning procedures for respiratory-gated IMRT including beam arrangements and dose-volume constraints were developed. Quality assurance procedures were designed to quantify both the dosimetric and positional accuracy of respiratory-gated IMRT, including film dosimetry dose measurements and Monte Carlo dose calculations for verification and validation of individual patient treatments. Respiratory-gated IMRT is accepted by both treatment staff and patients. The dosimetric and positional quality assurance test results indicate that respiratory-gated IMRT can be delivered accurately. If carefully implemented, respiratory-gated IMRT is a practical alternative to conventional thoracic radiotherapy. For mobile tumors, respiratory-gated radiotherapy is used as the standard of care at our institution. Due to the increased workload, the choice of IMRT is taken on a case-by-case basis, with approximately half of the non-small cell lung cancer patients receiving respiratory-gated IMRT. We are currently evaluating whether superior tumor coverage and limited normal tissue dosing will lead to improvements in local control and survival in non-small cell lung cancer

Light-effect transistor (LET) with multiple independent gating controls for optical logic gates and optical amplification

Science.gov (United States)

Marmon, Jason; Rai, Satish; Wang, Kai; Zhou, Weilie; Zhang, Yong

The pathway for CMOS technology beyond the 5-nm technology node remains unclear for both physical and technological reasons. A new transistor paradigm is required. A LET (Marmon et. al., Front. Phys. 2016, 4, No. 8) offers electronic-optical hybridization at the component level, and is capable of continuing Moore's law to the quantum scale. A LET overcomes a FET's fabrication complexity, e.g., physical gate and doping, by employing optical gating and photoconductivity, while multiple independent, optical gates readily realize unique functionalities. We report LET device characteristics and novel digital and analog applications, such as optical logic gates and optical amplification. Prototype CdSe-nanowire-based LETs, incorporating an M-S-M structure, show output and transfer characteristics resembling advanced FETs, e.g., on/off ratios up to 106 with a source-drain voltage of 1.43V, gate-power of 260nW, and a subthreshold swing of 0.3nW/decade (excluding losses). A LET has potential for high-switching (THz) speeds and extremely low-switching energies (aJ) in the ballistic transport region. Our work offers new electronic-optical integration strategies for high speed and low energy computing approaches, which could potentially be extended to other materials and devices.

Silicon photonic crystal all-optical logic gates

Energy Technology Data Exchange (ETDEWEB)

Fu, Yulan [State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871 (China); Hu, Xiaoyong, E-mail: xiaoyonghu@pku.edu.cn [State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871 (China); Gong, Qihuang, E-mail: qhgong@pku.edu.cn [State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871 (China)

2013-01-03

All-optical logic gates, including OR, XOR, NOT, XNOR, and NAND gates, are realized theoretically in a two-dimensional silicon photonic crystal using the light beam interference effect. The ingenious photonic crystal waveguide component design, the precisely controlled optical path difference, and the elaborate device configuration ensure the simultaneous realization of five types of logic gate with low-power and a contrast ratio between the logic states of “1” and “0” as high as 20 dB. High power is not necessary for operation of these logic gate devices. This offers a simple and effective approach for the realization of integrated all-optical logic devices.

Electrocardiographic gating in positron emission computed tomography

International Nuclear Information System (INIS)

Hoffman, E.J.; Phelps, M.E.; Wisenberg, G.; Schelbert, H.R.; Kuhl, D.E.

1979-01-01

Electrocardiographic (ECG) synchronized multiple gated data acquisition was employed with positron emission computed tomography (ECT) to obtain images of myocardial blood pool and myocardium. The feasibility and requirements of multiple gated data acquisition in positron ECT were investigated for 13NH3, ( 18 F)-2-fluoro-2-D-deoxyglucose, and ( 11 C)-carboxyhemoglobin. Examples are shown in which image detail is enhanced and image interpretation is facilitated when ECG gating is employed in the data collection. Analysis of count rate data from a series of volunteers indicates that multiple, statistically adequate images can be obtained under a multiple gated data collection format without an increase in administered dose

Enhanced transconductance in a double-gate graphene field-effect transistor

Science.gov (United States)

Hwang, Byeong-Woon; Yeom, Hye-In; Kim, Daewon; Kim, Choong-Ki; Lee, Dongil; Choi, Yang-Kyu

2018-03-01

Multi-gate transistors, such as double-gate, tri-gate and gate-all-around transistors are the most advanced Si transistor structure today. Here, a genuine double-gate transistor with a graphene channel is experimentally demonstrated. The top and bottom gates of the double-gate graphene field-effect transistor (DG GFET) are electrically connected so that the conductivity of the graphene channel can be modulated simultaneously by both the top and bottom gate. A single-gate graphene field-effect transistor (SG GFET) with only the top gate is also fabricated as a control device. For systematical analysis, the transfer characteristics of both GFETs were measured and compared. Whereas the maximum transconductance of the SG GFET was 17.1 μS/μm, that of the DG GFET was 25.7 μS/μm, which is approximately a 50% enhancement. The enhancement of the transconductance was reproduced and comprehensively explained by a physics-based compact model for GFETs. The investigation of the enhanced transfer characteristics of the DG GFET in this work shows the possibility of a multi-gate architecture for high-performance graphene transistor technology.

Emergency Gate Vibration of the Pipe-Turbine Model

Directory of Open Access Journals (Sweden)

Andrej Predin

2000-01-01

Full Text Available The vibration behavior of an emergency gate situated on a horizontal-shaft Kaplan turbine is studied. The analysis and transfer of the dynamic movements of the gate are quite complex. In particular the behavior is examined of the emergency gate for the case when the power unit is disconnected from the system or there is a breakdown of the guide vane system at the moment when the maximal head and capacity are achieved. Experimental-numerical methods both in the time domain and in the frequency domain are employed. Natural vibrations characterize a first zone, corresponding to relatively small gate openings. As the gate opening increases, the vibration behavior of the gate becomes increasingly dependent on the swirl pulsations in the draft tube of the turbine. Finally, the data transfer from the model to the prototype by use of the dynamic similitude law is discussed.

ECG-gating in non-cardiac digital subtraction angiography

International Nuclear Information System (INIS)

Gattoni, F.; Baldini, V.; Cairo, F.

1987-01-01

This paper reports the results of the ECG-gating in non-cardiac digital subtraction angiography (DSA). One hundred and fifteen patients underwent DSA (126 examinations); ECG-gating was applied in 66/126 examinations: images recorded at 70% of R wave were subtracted. Artifacts produced by vascular movements were evaluated in all patients: only 40 examinations, carried out whithout ECG-gating, showed vascular artifacts. The major advantage of the ECG-gated DSA is the more efficent subtraction because of the better images superimposition: therefore, ECG-gating can be clinically helpful. On the contrary, it could be a problem in arrhytmic or bradycardic patients. ECG-gating is helpful in DSA imaging of the thoracic and abdominal aorta and of the cervical and renal arteries. In the examinations of peripheral vessels of the limbs it is not so efficent as in the trunk or in the neck

Analysis of gate underlap channel double gate MOS transistor for electrical detection of bio-molecules

Science.gov (United States)

Ajay; Narang, Rakhi; Saxena, Manoj; Gupta, Mridula

2015-12-01

In this paper, an analytical model for gate drain underlap channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DG-MOSFET) for label free electrical detection of biomolecules has been proposed. The conformal mapping technique has been used to derive the expressions for surface potential, lateral electric field, energy bands (i.e. conduction and valence band) and threshold voltage (Vth). Subsequently a full drain current model to analyze the sensitivity of the biosensor has been developed. The shift in the threshold voltage and drain current (after the biomolecules interaction with the gate underlap channel region of the MOS transistor) has been used as a sensing metric. All the characteristic trends have been verified through ATLAS (SILVACO) device simulation results.

Gate A: changes to opening hours

CERN Multimedia

2015-01-01

Due to maintenance work, the opening hours of Gate A (near Reception) will be modified between Monday, 13 and Friday, 17 April 2015.   During this period, the gate will be open to vehicles between 7 a.m. and 9.30 a.m., then between 4.30 p.m. and 7 p.m. It will be completely closed to traffic between 9.30 a.m. and 4.30 p.m. Pedestrians and cyclists may continue to use the gate. We apologise for any inconvenience and thank you for your understanding.

Synthesis of multivalued quantum logic circuits by elementary gates

Science.gov (United States)

Di, Yao-Min; Wei, Hai-Rui

2013-01-01

We propose the generalized controlled X (gcx) gate as the two-qudit elementary gate, and based on Cartan decomposition, we also give the one-qudit elementary gates. Then we discuss the physical implementation of these elementary gates and show that it is feasible with current technology. With these elementary gates many important qudit quantum gates can be synthesized conveniently. We provide efficient methods for the synthesis of various kinds of controlled qudit gates and greatly simplify the synthesis of existing generic multi-valued quantum circuits. Moreover, we generalize the quantum Shannon decomposition (QSD), the most powerful technique for the synthesis of generic qubit circuits, to the qudit case. A comparison of ququart (d=4) circuits and qubit circuits reveals that using ququart circuits may have an advantage over the qubit circuits in the synthesis of quantum circuits.

Accuracy and Consistency of Respiratory Gating in Abdominal Cancer Patients

International Nuclear Information System (INIS)

Ge, Jiajia; Santanam, Lakshmi; Yang, Deshan; Parikh, Parag J.

2013-01-01

Purpose: To evaluate respiratory gating accuracy and intrafractional consistency for abdominal cancer patients treated with respiratory gated treatment on a regular linear accelerator system. Methods and Materials: Twelve abdominal patients implanted with fiducials were treated with amplitude-based respiratory-gated radiation therapy. On the basis of daily orthogonal fluoroscopy, the operator readjusted the couch position and gating window such that the fiducial was within a setup margin (fiducial-planning target volume [f-PTV]) when RPM indicated “beam-ON.” Fifty-five pre- and post-treatment fluoroscopic movie pairs with synchronized respiratory gating signal were recorded. Fiducial motion traces were extracted from the fluoroscopic movies using a template matching algorithm and correlated with f-PTV by registering the digitally reconstructed radiographs with the fluoroscopic movies. Treatment was determined to be “accurate” if 50% of the fiducial area stayed within f-PTV while beam-ON. For movie pairs that lost gating accuracy, a MATLAB program was used to assess whether the gating window was optimized, the external-internal correlation (EIC) changed, or the patient moved between movies. A series of safety margins from 0.5 mm to 3 mm was added to f-PTV for reassessing gating accuracy. Results: A decrease in gating accuracy was observed in 44% of movie pairs from daily fluoroscopic movies of 12 abdominal patients. Three main causes for inaccurate gating were identified as change of global EIC over time (∼43%), suboptimal gating setup (∼37%), and imperfect EIC within movie (∼13%). Conclusions: Inconsistent respiratory gating accuracy may occur within 1 treatment session even with a daily adjusted gating window. To improve or maintain gating accuracy during treatment, we suggest using at least a 2.5-mm safety margin to account for gating and setup uncertainties

High performance top-gated indium–zinc–oxide thin film transistors with in-situ formed HfO{sub 2} gate insulator

Energy Technology Data Exchange (ETDEWEB)

Song, Yang, E-mail: yang_song@brown.edu [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); Zaslavsky, A. [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States); Paine, D.C. [School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States)

2016-09-01

We report on top-gated indium–zinc–oxide (IZO) thin film transistors (TFTs) with an in-situ formed HfO{sub 2} gate dielectric insulator. Building on our previous demonstration of high-performance IZO TFTs with Al{sub 2}O{sub 3}/HfO{sub 2} gate dielectric, we now report on a one-step process, in which Hf is evaporated onto the 20 nm thick IZO channel, forming a partially oxidized HfO{sub x} layer, without any additional insulator in-between. After annealing in air at 300 °C, the in-situ reaction between partially oxidized Hf and IZO forms a high quality HfO{sub 2} gate insulator with a low interface trapped charge density N{sub TC} ~ 2.3 × 10{sup 11} cm{sup −2} and acceptably low gate leakage < 3 × 10{sup −7} A/cm{sup 2} at gate voltage V{sub G} = 1 V. The annealed TFTs with gate length L{sub G} = 50 μm have high mobility ~ 95 cm{sup 2}/V ∙ s (determined via the Y-function technique), high on/off ratio ~ 10{sup 7}, near-zero threshold voltage V{sub T} = − 0.02 V, and a subthreshold swing of 0.062 V/decade, near the theoretical limit. The on-current of our proof-of-concept TFTs is relatively low, but can be improved by reducing L{sub G}, indicating that high-performance top-gated HfO{sub 2}-isolated IZO TFTs can be fabricated using a single-step in-situ dielectric formation approach. - Highlights: • High-performance indium–zinc–oxide (IZO) thin film transistors (TFTs). • Single-step in-situ dielectric formation approach simplifies fabrication process. • During anneal, reaction between HfO{sub x} and IZO channel forms a high quality HfO{sub 2} layer. • Gate insulator HfO{sub 2} shows low interface trapped charge and small gate leakage. • TFTs have high mobility, near-zero threshold voltage, and a low subthreshold swing.

A quantum Fredkin gate.

Science.gov (United States)

Patel, Raj B; Ho, Joseph; Ferreyrol, Franck; Ralph, Timothy C; Pryde, Geoff J

2016-03-01

Minimizing the resources required to build logic gates into useful processing circuits is key to realizing quantum computers. Although the salient features of a quantum computer have been shown in proof-of-principle experiments, difficulties in scaling quantum systems have made more complex operations intractable. This is exemplified in the classical Fredkin (controlled-SWAP) gate for which, despite theoretical proposals, no quantum analog has been realized. By adding control to the SWAP unitary, we use photonic qubit logic to demonstrate the first quantum Fredkin gate, which promises many applications in quantum information and measurement. We implement example algorithms and generate the highest-fidelity three-photon Greenberger-Horne-Zeilinger states to date. The technique we use allows one to add a control operation to a black-box unitary, something that is impossible in the standard circuit model. Our experiment represents the first use of this technique to control a two-qubit operation and paves the way for larger controlled circuits to be realized efficiently.

A quantum Fredkin gate

Science.gov (United States)

Patel, Raj B.; Ho, Joseph; Ferreyrol, Franck; Ralph, Timothy C.; Pryde, Geoff J.

2016-01-01

Minimizing the resources required to build logic gates into useful processing circuits is key to realizing quantum computers. Although the salient features of a quantum computer have been shown in proof-of-principle experiments, difficulties in scaling quantum systems have made more complex operations intractable. This is exemplified in the classical Fredkin (controlled-SWAP) gate for which, despite theoretical proposals, no quantum analog has been realized. By adding control to the SWAP unitary, we use photonic qubit logic to demonstrate the first quantum Fredkin gate, which promises many applications in quantum information and measurement. We implement example algorithms and generate the highest-fidelity three-photon Greenberger-Horne-Zeilinger states to date. The technique we use allows one to add a control operation to a black-box unitary, something that is impossible in the standard circuit model. Our experiment represents the first use of this technique to control a two-qubit operation and paves the way for larger controlled circuits to be realized efficiently. PMID:27051868

Characterization of a Common-Gate Amplifier Using Ferroelectric Transistors

Science.gov (United States)

Hunt, Mitchell; Sayyah, Rana; MacLeod, Todd C.; Ho, Fat D.

2011-01-01

In this paper, the empirical data collected through experiments performed using a FeFET in the common-gate amplifier circuit is presented. The FeFET common-gate amplifier was characterized by varying all parameters in the circuit, such as load resistance, biasing of the transistor, and input voltages. Due to the polarization of the ferroelectric layer, the particular behavior of the FeFET common-gate amplifier presents interesting results. Furthermore, the differences between a FeFET common-gate amplifier and a MOSFET common-gate amplifier are examined.

Bill Gates vil redde Folkeskolen

DEFF Research Database (Denmark)

Fejerskov, Adam Moe

2014-01-01

Det amerikanske uddannelsessystem bliver for tiden udsat for hård kritik, ledt an af Microsoft stifteren Bill Gates. Gates har indtil videre brugt 3 mia. kroner på at skabe opbakning til tiltag som præstationslønning af lærere og strømlining af pensum på tværs af alle skoler i landet...

Multi-Valued Logic Gates, Continuous Sensitivity, Reversibility, and Threshold Functions

OpenAIRE

İlhan, Aslı Güçlükan; Ünlü, Özgün

2016-01-01

We define an invariant of a multi-valued logic gate by considering the number of certain threshold functions associated with the gate. We call this invariant the continuous sensitivity of the gate. We discuss a method for analysing continuous sensitivity of a multi-valued logic gate by using experimental data about the gate. In particular, we will show that this invariant provides a lower bound for the sensitivity of a boolean function considered as a multi-valued logic gate. We also discuss ...

Normal p50 gating in unmedicated schizophrenia outpatients

DEFF Research Database (Denmark)

Arnfred, Sidse M; Chen, Andrew C.N.; Glenthøj, Birte Y

2003-01-01

The hypothesis of a sensory gating defect in schizophrenia has been supported by studies demonstrating deficient auditory P50 gating in patients. P50 gating is the relative attenuation of P50 amplitude in the auditory evoked potential following the second auditory stimulus of a stimulus pair....

Online junction temperature measurement using peak gate current

DEFF Research Database (Denmark)

Baker, Nick; Munk-Nielsen, Stig; Iannuzzo, Francesco

2015-01-01

A new method for junction temperature measurement of MOS-gated power semiconductor switches is presented. The measurement method involves detecting the peak voltage over the external gate resistor of an IGBT or MOSFET during turn-on. This voltage is directly proportional to the peak gate current...

Cytoplasmic Domains and Voltage-Dependent Potassium Channel Gating

Science.gov (United States)

Barros, Francisco; Domínguez, Pedro; de la Peña, Pilar

2012-01-01

The basic architecture of the voltage-dependent K+ channels (Kv channels) corresponds to a transmembrane protein core in which the permeation pore, the voltage-sensing components and the gating machinery (cytoplasmic facing gate and sensor–gate coupler) reside. Usually, large protein tails are attached to this core, hanging toward the inside of the cell. These cytoplasmic regions are essential for normal channel function and, due to their accessibility to the cytoplasmic environment, constitute obvious targets for cell-physiological control of channel behavior. Here we review the present knowledge about the molecular organization of these intracellular channel regions and their role in both setting and controlling Kv voltage-dependent gating properties. This includes the influence that they exert on Kv rapid/N-type inactivation and on activation/deactivation gating of Shaker-like and eag-type Kv channels. Some illustrative examples about the relevance of these cytoplasmic domains determining the possibilities for modulation of Kv channel gating by cellular components are also considered. PMID:22470342

Automatically closing swing gate closure assembly

Science.gov (United States)

Chang, Shih-Chih; Schuck, William J.; Gilmore, Richard F.

1988-01-01

A swing gate closure assembly for nuclear reactor tipoff assembly wherein the swing gate is cammed open by a fuel element or spacer but is reliably closed at a desired closing rate primarily by hydraulic forces in the absence of a fuel charge.

Synthesizing biomolecule-based Boolean logic gates.

Science.gov (United States)

Miyamoto, Takafumi; Razavi, Shiva; DeRose, Robert; Inoue, Takanari

2013-02-15

One fascinating recent avenue of study in the field of synthetic biology is the creation of biomolecule-based computers. The main components of a computing device consist of an arithmetic logic unit, the control unit, memory, and the input and output devices. Boolean logic gates are at the core of the operational machinery of these parts, and hence to make biocomputers a reality, biomolecular logic gates become a necessity. Indeed, with the advent of more sophisticated biological tools, both nucleic acid- and protein-based logic systems have been generated. These devices function in the context of either test tubes or living cells and yield highly specific outputs given a set of inputs. In this review, we discuss various types of biomolecular logic gates that have been synthesized, with particular emphasis on recent developments that promise increased complexity of logic gate circuitry, improved computational speed, and potential clinical applications.

Synthesizing Biomolecule-based Boolean Logic Gates

Science.gov (United States)

Miyamoto, Takafumi; Razavi, Shiva; DeRose, Robert; Inoue, Takanari

2012-01-01

One fascinating recent avenue of study in the field of synthetic biology is the creation of biomolecule-based computers. The main components of a computing device consist of an arithmetic logic unit, the control unit, memory, and the input and output devices. Boolean logic gates are at the core of the operational machinery of these parts, hence to make biocomputers a reality, biomolecular logic gates become a necessity. Indeed, with the advent of more sophisticated biological tools, both nucleic acid- and protein-based logic systems have been generated. These devices function in the context of either test tubes or living cells and yield highly specific outputs given a set of inputs. In this review, we discuss various types of biomolecular logic gates that have been synthesized, with particular emphasis on recent developments that promise increased complexity of logic gate circuitry, improved computational speed, and potential clinical applications. PMID:23526588

Exchange gate on the qudit space and Fock space

International Nuclear Information System (INIS)

Fujii, Kazuyuki

2003-01-01

We construct an exchange gate with small elementary gates on the space of qudits, which consist of three controlled shift gates and three 'reverse' gates. This is a natural extension of the qubit case. We also consider a similar situation in Fock space, but in this case we find some differences. However, we can construct the exchange gate by making use of a generalized coherent operator based on the Lie algebra su(2), which is a well-known method in quantum optics. We also make a brief comment on 'imperfect clones'

Dry dock gate stability modelling

Science.gov (United States)

Oktoberty; Widiyanto; Sasono, E. J.; Pramono, S.; Wandono, A. T.

2018-03-01

The development of marine transportation needs in Indonesia increasingly opens national shipyard business opportunities to provide shipbuilding services to the shipbuilding vessels. That emphasizes the stability of prime. The ship's decking door becomes an integral part of the efficient place and the specification of the use of the asset of its operational ease. This study aims to test the stability of Dry Dock gate with the length of 35.4 meters using Maxsurf and Hydromax in analyzing the calculation were in its assessment using interval per 500 mm length so that it can get detail data toward longitudinal and transverse such as studying Ship planning in general. The test result shows dry dock gate meets IMO standard with ballast construction containing 54% and 68% and using fix ballast can produce GMt 1,924 m, tide height 11,357m. The GMt value indicates dry dick gate can be stable and firmly erect at the base of the mouth dry dock. When empty ballast produces GMt 0.996 which means dry dock date is stable, but can easily be torn down. The condition can be used during dry dock gate treatment.

Robust Deterministic Controlled Phase-Flip Gate and Controlled-Not Gate Based on Atomic Ensembles Embedded in Double-Sided Optical Cavities

Science.gov (United States)

Liu, A.-Peng; Cheng, Liu-Yong; Guo, Qi; Zhang, Shou

2018-02-01

We first propose a scheme for controlled phase-flip gate between a flying photon qubit and the collective spin wave (magnon) of an atomic ensemble assisted by double-sided cavity quantum systems. Then we propose a deterministic controlled-not gate on magnon qubits with parity-check building blocks. Both the gates can be accomplished with 100% success probability in principle. Atomic ensemble is employed so that light-matter coupling is remarkably improved by collective enhancement. We assess the performance of the gates and the results show that they can be faithfully constituted with current experimental techniques.

Calibration of submerged multi-sluice gates

Directory of Open Access Journals (Sweden)

Mohamed F. Sauida

2014-09-01

The main objective of this work is to study experimentally and verify empirically the different parameters affecting the discharge through submerged multiple sluice gates (i.e., the expansion ratios, gates operational management, etc.. Using multiple regression analysis of the experimental results, a general equation for discharge coefficient is developed. The results show, that the increase in the expansion ratio and the asymmetric operation of gates, give higher values for the discharge coefficient. The obtained predictions of the discharge coefficient using the developed equations are compared to the experimental data. The present developed equations showed good consistency and high accuracy.

A double-gate double-feedback JFET charge-sensitive preamplifier

International Nuclear Information System (INIS)

Fazzi, A.

1996-01-01

A new charge-sensitive preamplifier (CSP) without a physical resistance in the feedback is presented. The input device has to be a double-gate JFET. In this new preamplifier configuration the feedback capacitor is continuously discharged by means of a second DC current feedback loop closed through the bottom gate of the input JFET. The top gate-channel junction works as usual in reverse bias, the bottom gate-channel is forward biased. A fraction of the current injected by the bottom gate reaches the top gate discharging the feedback capacitor. The n-channel double-gate JFET is considered from the viewpoint of the restoring action as a parasitic p-n-p ''transversal'' bipolar junction transistor. The new preamplifier is also suited for detectors operating at room temperature with leakage current which may vary with time. The DC behaviour and the dynamic behaviour of the circuit is analyzed and new measurements presented. (orig.)

Deep Gate Recurrent Neural Network

Science.gov (United States)

2016-11-22

and Fred Cummins. Learning to forget: Continual prediction with lstm . Neural computation, 12(10):2451–2471, 2000. Alex Graves. Generating sequences...DSGU) and Simple Gated Unit (SGU), which are structures for learning long-term dependencies. Compared to traditional Long Short-Term Memory ( LSTM ) and...Gated Recurrent Unit (GRU), both structures require fewer parameters and less computation time in sequence classification tasks. Unlike GRU and LSTM

Error-Transparent Quantum Gates for Small Logical Qubit Architectures

Science.gov (United States)

Kapit, Eliot

2018-02-01

One of the largest obstacles to building a quantum computer is gate error, where the physical evolution of the state of a qubit or group of qubits during a gate operation does not match the intended unitary transformation. Gate error stems from a combination of control errors and random single qubit errors from interaction with the environment. While great strides have been made in mitigating control errors, intrinsic qubit error remains a serious problem that limits gate fidelity in modern qubit architectures. Simultaneously, recent developments of small error-corrected logical qubit devices promise significant increases in logical state lifetime, but translating those improvements into increases in gate fidelity is a complex challenge. In this Letter, we construct protocols for gates on and between small logical qubit devices which inherit the parent device's tolerance to single qubit errors which occur at any time before or during the gate. We consider two such devices, a passive implementation of the three-qubit bit flip code, and the author's own [E. Kapit, Phys. Rev. Lett. 116, 150501 (2016), 10.1103/PhysRevLett.116.150501] very small logical qubit (VSLQ) design, and propose error-tolerant gate sets for both. The effective logical gate error rate in these models displays superlinear error reduction with linear increases in single qubit lifetime, proving that passive error correction is capable of increasing gate fidelity. Using a standard phenomenological noise model for superconducting qubits, we demonstrate a realistic, universal one- and two-qubit gate set for the VSLQ, with error rates an order of magnitude lower than those for same-duration operations on single qubits or pairs of qubits. These developments further suggest that incorporating small logical qubits into a measurement based code could substantially improve code performance.

Diminished auditory sensory gating during active auditory verbal hallucinations.

Science.gov (United States)

Thoma, Robert J; Meier, Andrew; Houck, Jon; Clark, Vincent P; Lewine, Jeffrey D; Turner, Jessica; Calhoun, Vince; Stephen, Julia

2017-10-01

Auditory sensory gating, assessed in a paired-click paradigm, indicates the extent to which incoming stimuli are filtered, or "gated", in auditory cortex. Gating is typically computed as the ratio of the peak amplitude of the event related potential (ERP) to a second click (S2) divided by the peak amplitude of the ERP to a first click (S1). Higher gating ratios are purportedly indicative of incomplete suppression of S2 and considered to represent sensory processing dysfunction. In schizophrenia, hallucination severity is positively correlated with gating ratios, and it was hypothesized that a failure of sensory control processes early in auditory sensation (gating) may represent a larger system failure within the auditory data stream; resulting in auditory verbal hallucinations (AVH). EEG data were collected while patients (N=12) with treatment-resistant AVH pressed a button to indicate the beginning (AVH-on) and end (AVH-off) of each AVH during a paired click protocol. For each participant, separate gating ratios were computed for the P50, N100, and P200 components for each of the AVH-off and AVH-on states. AVH trait severity was assessed using the Psychotic Symptoms Rating Scales AVH Total score (PSYRATS). The results of a mixed model ANOVA revealed an overall effect for AVH state, such that gating ratios were significantly higher during the AVH-on state than during AVH-off for all three components. PSYRATS score was significantly and negatively correlated with N100 gating ratio only in the AVH-off state. These findings link onset of AVH with a failure of an empirically-defined auditory inhibition system, auditory sensory gating, and pave the way for a sensory gating model of AVH. Copyright © 2017 Elsevier B.V. All rights reserved.

Respiratory gating in cardiac PET

DEFF Research Database (Denmark)

Lassen, Martin Lyngby; Rasmussen, Thomas; Christensen, Thomas E

2017-01-01

BACKGROUND: Respiratory motion due to breathing during cardiac positron emission tomography (PET) results in spatial blurring and erroneous tracer quantification. Respiratory gating might represent a solution by dividing the PET coincidence dataset into smaller respiratory phase subsets. The aim...... of our study was to compare the resulting imaging quality by the use of a time-based respiratory gating system in two groups administered either adenosine or dipyridamole as the pharmacological stress agent. METHODS AND RESULTS: Forty-eight patients were randomized to adenosine or dipyridamole cardiac...... stress (82)RB-PET. Respiratory rates and depths were measured by a respiratory gating system in addition to registering actual respiratory rates. Patients undergoing adenosine stress showed a decrease in measured respiratory rate from initial to later scan phase measurements [12.4 (±5.7) vs 5.6 (±4...

Feasibility of epicardial adipose tissue quantification in non-ECG-gated low-radiation-dose CT: comparison with prospectively ECG-gated cardiac CT

Energy Technology Data Exchange (ETDEWEB)

Simon-Yarza, Isabel; Viteri-Ramirez, Guillermo; Saiz-Mendiguren, Ramon; Slon-Roblero, Pedro J.; Paramo, Maria [Dept. of Radiology, Clinica Univ. de Navarra, Pamplona (Spain); Bastarrika, Gorka [Dept. of Radiology, Clinica Univ. de Navarra, Pamplona (Spain); Cardiac Imaging Unit, Clinica Univ. de Navarra, Pamplona (Spain)], e-mail: bastarrika@unav.es

2012-06-15

Background: Epicardial adipose tissue (EAT) is an important indicator of cardiovascular risk. This parameter is generally assessed on ECG-gated computed tomography (CT) images. Purpose: To evaluate feasibility and reliability of EAT quantification on non-gated thoracic low-radiation-dose CT examinations with respect to prospectively ECG-gated cardiac CT acquisition. Material and Methods: Sixty consecutive asymptomatic smokers (47 men; mean age 64 {+-} 9.8 years) underwent low-dose CT of the chest and prospectively ECG-gated cardiac CT acquisitions (64-slice dual-source CT). The two examinations were reconstructed with the same range, field of view, slice thickness, and convolution algorithm. Two independent observers blindly quantified EAT volume using commercially available software. Data were compared with paired sample Student t-test, concordance correlation coefficients (CCC), and Bland-Altman plots. Results: No statistically significant difference was observed for EAT volume quantification with low-dose-CT (141.7 {+-} 58.3 mL) with respect to ECG-gated CT (142.7 {+-} 57.9 mL). Estimation of CCC showed almost perfect concordance between the two techniques for EAT-volume assessment (CCC, 0.99; mean difference, 0.98 {+-} 5.1 mL). Inter-observer agreement for EAT volume estimation was CCC: 0.96 for low-dose-CT examinations and 0.95 for ECG-gated CT. Conclusion: Non-gated low-dose CT allows quantifying EAT with almost the same concordance and reliability as using dedicated prospectively ECG-gated cardiac CT acquisition protocols.

Feasibility of epicardial adipose tissue quantification in non-ECG-gated low-radiation-dose CT: comparison with prospectively ECG-gated cardiac CT

International Nuclear Information System (INIS)

Simon-Yarza, Isabel; Viteri-Ramirez, Guillermo; Saiz-Mendiguren, Ramon; Slon-Roblero, Pedro J.; Paramo, Maria; Bastarrika, Gorka

2012-01-01

Background: Epicardial adipose tissue (EAT) is an important indicator of cardiovascular risk. This parameter is generally assessed on ECG-gated computed tomography (CT) images. Purpose: To evaluate feasibility and reliability of EAT quantification on non-gated thoracic low-radiation-dose CT examinations with respect to prospectively ECG-gated cardiac CT acquisition. Material and Methods: Sixty consecutive asymptomatic smokers (47 men; mean age 64 ± 9.8 years) underwent low-dose CT of the chest and prospectively ECG-gated cardiac CT acquisitions (64-slice dual-source CT). The two examinations were reconstructed with the same range, field of view, slice thickness, and convolution algorithm. Two independent observers blindly quantified EAT volume using commercially available software. Data were compared with paired sample Student t-test, concordance correlation coefficients (CCC), and Bland-Altman plots. Results: No statistically significant difference was observed for EAT volume quantification with low-dose-CT (141.7 ± 58.3 mL) with respect to ECG-gated CT (142.7 ± 57.9 mL). Estimation of CCC showed almost perfect concordance between the two techniques for EAT-volume assessment (CCC, 0.99; mean difference, 0.98 ± 5.1 mL). Inter-observer agreement for EAT volume estimation was CCC: 0.96 for low-dose-CT examinations and 0.95 for ECG-gated CT. Conclusion: Non-gated low-dose CT allows quantifying EAT with almost the same concordance and reliability as using dedicated prospectively ECG-gated cardiac CT acquisition protocols

Dual material gate doping-less tunnel FET with hetero gate dielectric for enhancement of analog/RF performance

Science.gov (United States)

Anand, Sunny; Sarin, R. K.

2017-02-01

In this paper, charge-plasma-based tunnel FET is proposed by employing dual material gate with hetero gate dielectric technique and it is named hetero-dielectric dual material gate doping-less TFET (HD_DMG_DLTFET). It is compared with conventional doping-less TFET (DLTFET) and dual material gate doping-less TFET (DMG_DLTFET) on the basis of analog and RF performance. The HD_DMG_DLTFET provides better ON state current ({I}\\text{ON}=94 μ \\text{A}/μ \\text{m}), {I}\\text{ON}/{I}\\text{OFF}(≈ 1.36× {10}13), \\text{point} (≈ 3\\text{mV}/\\text{dec}) and average subthreshold slope (\\text{AV}-\\text{SS}=40.40 \\text{mV}/\\text{dec}). The proposed device offers low total gate capacitance (C gg) along with higher drive current. However, with a better transconductance (g m) and cut-off frequency (f T), the HD_DMG_DLTFET can be a good candidate for RF circuitry. The early voltage (V EA) and output conductance (g d) are also moderate for the proposed device with comparison to other devices and therefore can be a candidate for analog devices. From all these simulation results and their study, it is observed that HD_DMG_DLTFET has improved analog/RF performance compared to DLTFET and DMG_DLTFET.

The gate oxide integrity of CVD tungsten polycide

International Nuclear Information System (INIS)

Wu, N.W.; Su, W.D.; Chang, S.W.; Tseng, M.F.

1988-01-01

CVD tungsten polycide has been demonstrated as a good gate material in recent very large scale integration (VLSI) technology. CVD tungsten silicide offers advantages of low resistivity, high temperature stability and good step coverage. On the other hand, the polysilicon underlayer preserves most characteristics of the polysilicon gate and acts as a stress buffer layer to absorb part of the thermal stress origin from the large thermal expansion coefficient of tungsten silicide. Nevertheless, the gate oxide of CVD tungsten polycide is less stable or reliable than that of polysilicon gate. In this paper, the gate oxide integrity of CVD tungsten polycide with various thickness combinations and different thermal processes have been analyzed by several electrical measurements including breakdown yield, breakdown fluence, room temperature TDDB, I-V characteristics, electron traps and interface state density

Hybrid Toffoli gate on photons and quantum spins.

Science.gov (United States)

Luo, Ming-Xing; Ma, Song-Ya; Chen, Xiu-Bo; Wang, Xiaojun

2015-11-16

Quantum computation offers potential advantages in solving a number of interesting and difficult problems. Several controlled logic gates, the elemental building blocks of quantum computer, have been realized with various physical systems. A general technique was recently proposed that significantly reduces the realization complexity of multiple-control logic gates by harnessing multi-level information carriers. We present implementations of a key quantum circuit: the three-qubit Toffoli gate. By exploring the optical selection rules of one-sided optical microcavities, a Toffoli gate may be realized on all combinations of photon and quantum spins in the QD-cavity. The three general controlled-NOT gates are involved using an auxiliary photon with two degrees of freedom. Our results show that photons and quantum spins may be used alternatively in quantum information processing.

Extending Double Optical Gating to the Midinfrared

Science.gov (United States)

Gorman, Timothy; Camper, Antoine; Agostini, Pierre; Dimauro, Louis

2015-05-01

In the past decade there has been great interest in creating broadband isolated attosecond pulses (IAPs). Primarily these IAPs have been generated using Ti:Sapphire 800nm short pulses, namely through spatiotemporal gating with the attosecond lighthouse technique, amplitude gating, polarization gating, and double optical gating (DOG). Here we present theoretical calculations and experimental investigations into extending DOG to using a 2 μm driving wavelength, the benefits of which include extended harmonic cutoff and longer input driving pulse durations. It is proposed that broadband IAPs with cutoffs extending up to 250 eV can be generated in Argon by using >30 fs pulses from the passively-CEP stabilized 2 μm idler out of an optical parametric amplifier combined with a collinear DOG experimental setup.

Seven channel gated charge to time converter

Energy Technology Data Exchange (ETDEWEB)

Stubbs, R J; Waddoup, W D [Durham Univ. (UK)

1977-11-01

By using a hybrid integrated circuit seven independent gated charge to time converters have been constructed in a single width NIM module. Gate widths from < approximately 10 ns to approximately 300 ns are possible with a resolution of 0.25 pC, linearity is better than +-1 pC over 2.5 decades of input signal height. Together with a multichannel scaling system described in the following paper one has a very powerful multichannel gated ADC system.

Comparison of short-circuit characteristics of trench gate and planar gate U-shaped channel SOI-LIGBTs

Science.gov (United States)

Zhang, Long; Zhu, Jing; Sun, Weifeng; Zhao, Minna; Huang, Xuequan; Chen, Jiajun; Shi, Longxing; Chen, Jian; Ding, Desheng

2017-09-01

Comparison of short-circuit (SC) characteristics of 500 V rated trench gate U-shaped channel (TGU) SOI-LIGBT and planar gate U-shaped channel (PGU) SOI-LIGBT is made for the first time in this paper. The on-state carrier profile of the TGU structure is reshaped by the dual trenches (a gate trench G1 and a hole barrier trench G2), which leads to a different conduction behavior from that of the PGU structure. The TGU structure exhibits a higher latchup immunity but a severer self-heating effect. At current density (JC) 640 A/cm2. Comparison of layouts and fabrication processes are also made between the two types of devices.

Probing Dense Sprays with Gated, Picosecond, Digital Particle Field Holography

Directory of Open Access Journals (Sweden)

James Trolinger

2011-12-01

Full Text Available This paper describes work that demonstrated the feasibility of producing a gated digital holography system that is capable of producing high-resolution images of three-dimensional particle and structure details deep within dense particle fields of a spray. We developed a gated picosecond digital holocamera, using optical Kerr cell gating, to demonstrate features of gated digital holography that make it an exceptional candidate for this application. The Kerr cell gate shuttered the camera after the initial burst of ballistic and snake photons had been recorded, suppressing longer path, multiple scattered illumination. By starting with a CW laser without gating and then incorporating a picosecond laser and an optical Kerr gate, we were able to assess the imaging quality of the gated holograms, and determine improvement gained by gating. We produced high quality images of 50–200 μm diameter particles, hairs and USAF resolution charts from digital holograms recorded through turbid media where more than 98% of the light was scattered from the field. The system can gate pulses as short as 3 mm in pathlength (10 ps, enabling image-improving features of the system. The experiments lead us to the conclusion that this method has an excellent capability as a diagnostics tool in dense spray combustion research.

Free energy dissipation of the spontaneous gating of a single voltage-gated potassium channel.

Science.gov (United States)

Wang, Jia-Zeng; Wang, Rui-Zhen

2018-02-01

Potassium channels mainly contribute to the resting potential and re-polarizations, with the potassium electrochemical gradient being maintained by the pump Na + /K + -ATPase. In this paper, we construct a stochastic model mimicking the kinetics of a potassium channel, which integrates temporal evolving of the membrane voltage and the spontaneous gating of the channel. Its stationary probability density functions (PDFs) are found to be singular at the boundaries, which result from the fact that the evolving rates of voltage are greater than the gating rates of the channel. We apply PDFs to calculate the power dissipations of the potassium current, the leakage, and the gating currents. On a physical perspective, the essential role of the system is the K + -battery charging the leakage (L-)battery. A part of power will inevitably be dissipated among the process. So, the efficiency of energy transference is calculated.

Free energy dissipation of the spontaneous gating of a single voltage-gated potassium channel

Science.gov (United States)

Wang, Jia-Zeng; Wang, Rui-Zhen

2018-02-01

Potassium channels mainly contribute to the resting potential and re-polarizations, with the potassium electrochemical gradient being maintained by the pump Na+/K+-ATPase. In this paper, we construct a stochastic model mimicking the kinetics of a potassium channel, which integrates temporal evolving of the membrane voltage and the spontaneous gating of the channel. Its stationary probability density functions (PDFs) are found to be singular at the boundaries, which result from the fact that the evolving rates of voltage are greater than the gating rates of the channel. We apply PDFs to calculate the power dissipations of the potassium current, the leakage, and the gating currents. On a physical perspective, the essential role of the system is the K+-battery charging the leakage (L-)battery. A part of power will inevitably be dissipated among the process. So, the efficiency of energy transference is calculated.

A gating grid driver for time projection chambers

Energy Technology Data Exchange (ETDEWEB)

Tangwancharoen, S.; Lynch, W.G.; Barney, J.; Estee, J. [National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, MI 48824 (United States); Department of Physics and Astronomy, Michigan State University, East Lansing, MI 48824 (United States); Shane, R. [National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, MI 48824 (United States); Tsang, M.B., E-mail: tsang@nscl.msu.edu [National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, MI 48824 (United States); Department of Physics and Astronomy, Michigan State University, East Lansing, MI 48824 (United States); Zhang, Y. [Department of Physics, Tsinghua University, Beijing 100084 (China); Isobe, T.; Kurata-Nishimura, M. [RIKEN Nishina Center, Hirosawa 2-1, Wako, Saitama 351-0198 (Japan); Murakami, T. [Department of Physics, Kyoto University, Kita-shirakawa, Kyoto 606–8502 (Japan); Xiao, Z.G. [Department of Physics, Tsinghua University, Beijing 100084 (China); Zhang, Y.F. [College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875 (China)

2017-05-01

A simple but novel driver system has been developed to operate the wire gating grid of a Time Projection Chamber (TPC). This system connects the wires of the gating grid to its driver via low impedance transmission lines. When the gating grid is open, all wires have the same voltage allowing drift electrons, produced by the ionization of the detector gas molecules, to pass through to the anode wires. When the grid is closed, the wires have alternating higher and lower voltages causing the drift electrons to terminate at the more positive wires. Rapid opening of the gating grid with low pickup noise is achieved by quickly shorting the positive and negative wires to attain the average bias potential with N-type and P-type MOSFET switches. The circuit analysis and simulation software SPICE shows that the driver restores the gating grid voltage to 90% of the opening voltage in less than 0.20 µs, for small values of the termination resistors. When tested in the experimental environment of a time projection chamber larger termination resistors were chosen so that the driver opens the gating grid in 0.35 µs. In each case, opening time is basically characterized by the RC constant given by the resistance of the switches and terminating resistors and the capacitance of the gating grid and its transmission line. By adding a second pair of N-type and P-type MOSFET switches, the gating grid is closed by restoring 99% of the original charges to the wires within 3 µs.

Programming the quorum sensing-based AND gate in Shewanella oneidensis for logic gated-microbial fuel cells.

Science.gov (United States)

Hu, Yidan; Yang, Yun; Katz, Evgeny; Song, Hao

2015-03-11

An AND logic gate based on a synthetic quorum-sensing (QS) module was constructed in a Shewanella oneidensis MR-1 mtrA knockout mutant. The presence of two input signals activated the expression of a periplasmic decaheme cytochrome MtrA to regenerate the extracellular electron transfer conduit, enabling the construction of AND-gated microbial fuel cells.

ZnO nanowire-based nano-floating gate memory with Pt nanocrystals embedded in Al2O3 gate oxides

International Nuclear Information System (INIS)

Yeom, Donghyuk; Kang, Jeongmin; Lee, Myoungwon; Jang, Jaewon; Yun, Junggwon; Jeong, Dong-Young; Yoon, Changjoon; Koo, Jamin; Kim, Sangsig

2008-01-01

The memory characteristics of ZnO nanowire-based nano-floating gate memory (NFGM) with Pt nanocrystals acting as the floating gate nodes were investigated in this work. Pt nanocrystals were embedded between Al 2 O 3 tunneling and control oxide layers deposited on ZnO nanowire channels. For a representative ZnO nanowire-based NFGM with embedded Pt nanocrystals, a threshold voltage shift of 3.8 V was observed in its drain current versus gate voltage (I DS -V GS ) measurements for a double sweep of the gate voltage, revealing that the deep effective potential wells built into the nanocrystals provide our NFGM with a large charge storage capacity. Details of the charge storage effect observed in this memory device are discussed in this paper

Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO3/NdGaO3 heterostructures

Directory of Open Access Journals (Sweden)

Yongqi Dong

2017-05-01

Full Text Available The effect of gate voltage polarity on the behavior of NdNiO3 epitaxial thin films during ionic liquid gating is studied using in situ synchrotron X-ray techniques. We show that while negative biases have no discernible effect on the structure or composition of the films, large positive gate voltages result in the injection of a large concentration of oxygen vacancies (∼3% and pronounced lattice expansion (0.17% in addition to a 1000-fold increase in sheet resistance at room temperature. Despite the creation of large defect densities, the heterostructures exhibit a largely reversible switching behavior when sufficient time is provided for the vacancies to migrate in and out of the thin film surface. The results confirm that electrostatic gating takes place at negative gate voltages for p-type complex oxides while positive voltages favor the electrochemical reduction of Ni3+. Switching between positive and negative gate voltages therefore involves a combination of electronic and ionic doping processes that may be utilized in future electrochemical transistors.

Electrochemical Single-Molecule Transistors with Optimized Gate Coupling

DEFF Research Database (Denmark)

Osorio, Henrry M.; Catarelli, Samantha; Cea, Pilar

2015-01-01

Electrochemical gating at the single molecule level of viologen molecular bridges in ionic liquids is examined. Contrary to previous data recorded in aqueous electrolytes, a clear and sharp peak in the single molecule conductance versus electrochemical potential data is obtained in ionic liquids....... These data are rationalized in terms of a two-step electrochemical model for charge transport across the redox bridge. In this model the gate coupling in the ionic liquid is found to be fully effective with a modeled gate coupling parameter, ξ, of unity. This compares to a much lower gate coupling parameter...

Heavy-ion-induced, gate-rupture in power MOSFETs

International Nuclear Information System (INIS)

Fischer, T.A.

1987-01-01

A new, heavy-ion-induced, burnout mechanism has been experimentally observed in power metal-oxide-semiconductor field-effect transistors (MOSFETs). This mechanism occurs when a heavy, charged particle passes through the gate oxide region of n- or p-channel devices having sufficient gate-to-source or gate-to-drain bias. The gate-rupture leads to significant permanent degradation of the device. A proposed failure mechanism is discussed and experimentally verified. In addition, the absolute immunity of p-channel devices to heavy-ion-induced, semiconductor burnout is demonstrated and discussed along with new, non-destructive, burnout testing methods

Dual-gate polysilicon nanoribbon biosensors enable high sensitivity detection of proteins

International Nuclear Information System (INIS)

Zeimpekis, I; Sun, K; Hu, C; Ditshego, N M J; De Planque, M R R; Chong, H M H; Morgan, H; Ashburn, P; Thomas, O

2016-01-01

We demonstrate the advantages of dual-gate polysilicon nanoribbon biosensors with a comprehensive evaluation of different measurement schemes for pH and protein sensing. In particular, we compare the detection of voltage and current changes when top- and bottom-gate bias is applied. Measurements of pH show that a large voltage shift of 491 mV pH"−"1 is obtained in the subthreshold region when the top-gate is kept at a fixed potential and the bottom-gate is varied (voltage sweep). This is an improvement of 16 times over the 30 mV pH"−"1 measured using a top-gate sweep with the bottom-gate at a fixed potential. A similar large voltage shift of 175 mV is obtained when the protein avidin is sensed using a bottom-gate sweep. This is an improvement of 20 times compared with the 8.8 mV achieved from a top-gate sweep. Current measurements using bottom-gate sweeps do not deliver the same signal amplification as when using bottom-gate sweeps to measure voltage shifts. Thus, for detecting a small signal change on protein binding, it is advantageous to employ a double-gate transistor and to measure a voltage shift using a bottom-gate sweep. For top-gate sweeps, the use of a dual-gate transistor enables the current sensitivity to be enhanced by applying a negative bias to the bottom-gate to reduce the carrier concentration in the nanoribbon. For pH measurements, the current sensitivity increases from 65% to 149% and for avidin sensing it increases from 1.4% to 2.5%. (paper)

Tunnel field-effect transistor with two gated intrinsic regions

Directory of Open Access Journals (Sweden)

Y. Zhang

2014-07-01

Full Text Available In this paper, we propose and validate (using simulations a novel design of silicon tunnel field-effect transistor (TFET, based on a reverse-biased p+-p-n-n+ structure. 2D device simulation results show that our devices have significant improvements of switching performance compared with more conventional devices based on p-i-n structure. With independent gate voltages applied to two gated intrinsic regions, band-to-band tunneling (BTBT could take place at the p-n junction, and no abrupt degenerate doping profile is required. We developed single-side-gate (SSG structure and double-side-gate (DSG structure. SSG devices with HfO2 gate dielectric have a point subthreshold swing of 9.58 mV/decade, while DSG devices with polysilicon gate electrode material and HfO2 gate dielectric have a point subthreshold swing of 16.39 mV/decade. These DSG devices have ON-current of 0.255 μA/μm, while that is lower for SSG devices. Having two nano-scale independent gates will be quite challenging to realize with good uniformity across the wafer and the improved behavior of our TFET makes it a promising steep-slope switch candidate for further investigations.

Creativity and sensory gating indexed by the P50: selective versus leaky sensory gating in divergent thinkers and creative achievers.

Science.gov (United States)

Zabelina, Darya L; O'Leary, Daniel; Pornpattananangkul, Narun; Nusslock, Robin; Beeman, Mark

2015-03-01

Creativity has previously been linked with atypical attention, but it is not clear what aspects of attention, or what types of creativity are associated. Here we investigated specific neural markers of a very early form of attention, namely sensory gating, indexed by the P50 ERP, and how it relates to two measures of creativity: divergent thinking and real-world creative achievement. Data from 84 participants revealed that divergent thinking (assessed with the Torrance Test of Creative Thinking) was associated with selective sensory gating, whereas real-world creative achievement was associated with "leaky" sensory gating, both in zero-order correlations and when controlling for academic test scores in a regression. Thus both creativity measures related to sensory gating, but in opposite directions. Additionally, divergent thinking and real-world creative achievement did not interact in predicting P50 sensory gating, suggesting that these two creativity measures orthogonally relate to P50 sensory gating. Finally, the ERP effect was specific to the P50 - neither divergent thinking nor creative achievement were related to later components, such as the N100 and P200. Overall results suggest that leaky sensory gating may help people integrate ideas that are outside of focus of attention, leading to creativity in the real world; whereas divergent thinking, measured by divergent thinking tests which emphasize numerous responses within a limited time, may require selective sensory processing more than previously thought. Copyright © 2015 Elsevier Ltd. All rights reserved.

Double gated-integrator for shaping nuclear radiation detector signals

International Nuclear Information System (INIS)

Gal, J.

2001-01-01

A new shaper, the double gated-integrator, for shaping nuclear radiation detector signals is investigated both theoretically and experimentally. The double gated-integrator consists of a pre-filter and two cascaded gated integrators. Two kinds of pre-filters were considered: a rectangular one and an exponential one. The results of the theoretical calculation show that the best figure of demerit for the double gated-integrator with exponential pre-filter is 1.016. This means that its noise to signal ratio is only 1.6% worse than that it is for infinite cusp shaping. The practical realization of the exponential pre-filter and that of the double gated integrator, both in analogue and in digital way, is very simple. Therefore, the double gated-integrator with exponential pre-filter could be a promising solution for shaping nuclear radiation detector signals

Gate-keeper module for TANSY-KM5

International Nuclear Information System (INIS)

Rydz, R.; Norberg, L.; Urholm, L.; Grosshoeg, G.

1991-01-01

The purpose of the Gate-keeper is the control of the RDCs, the ADCs, and the constant fraction discriminator. The Gate-keeper synchronizes the units and ensures that the data taking is clean and not intermixed with other events. There are six Gate-Keepers in the system, one for each proton detector. All input circuits are designed to accept TTL as well as negative NIM signals. The output is 50 ohm TTL or negative NIM as defined by internal jumpers

Quality verification for respiratory gated proton therapy

International Nuclear Information System (INIS)

Kim, Eun Sook; Jang, Yo Jong; Park, Ji Yeon; Kang, Dong Yun; Yeom, Doo Seok

2013-01-01

To verify accuracy of respiratory gated proton therapy by measuring and analyzing proton beam delivered when respiratory gated proton therapy is being performed in our institute. The plan data of 3 patients who took respiratory gated proton therapy were used to deliver proton beam from proton therapy system. The manufactured moving phantom was used to apply respiratory gating system to reproduce proton beam which was partially irradiated. The key characteristics of proton beam, range, spreat-out Bragg peak (SOBP) and output factor were measured 5 times and the same categories were measured in the continuous proton beam which was not performed with respiratory gating system. Multi-layer ionization chamber was used to measure range and SOBP, and Scanditronix Wellhofer and farmer chamber was used to measure output factor. The average ranges of 3 patients (A, B, C), who had taken respiratory gated proton therapy or not, were (A) 7.226, 7.230, (B) 12.216, 12.220 and (C) 19.918, 19.920 g/cm 2 and average SOBP were (A) 4.950, 4.940, (B) 6.496, 6.512 and (C) 8.486, 8.490 g/cm 2 . And average output factor were (A) 0.985, 0.984 (B) 1.026, 1.027 and (C) 1.138, 1.136 cGy/MU. The differences of average range were -0.004, -0.004, -0.002 g/cm 2 , that of SOBP were 0.010, -0.016, -0.004 g/cm 2 and that of output factor were 0.001, -0.001, 0.002 cGy/MU. It is observed that the range, SOBP and output factor of proton beam delivered when respiratory gated proton therapy is being performed have the same beam quality with no significant difference compared to the proton beam which was continuously irradiated. Therefore, this study verified the quality of proton beam delivered when respiratory gated proton therapy and confirmed the accuracy of proton therapy using this

Active gated imaging in driver assistance system

Science.gov (United States)

Grauer, Yoav

2014-04-01

In this paper, we shall present the active gated imaging system (AGIS) in relation to the automotive field. AGIS is based on a fast-gated camera and pulsed illuminator, synchronized in the time domain to record images of a certain range of interest. A dedicated gated CMOS imager sensor and near infra-red (NIR) pulsed laser illuminator, is presented in this paper to provide active gated technology. In recent years, we have developed these key components and learned the system parameters, which are most beneficial to nighttime (in all weather conditions) driving in terms of field of view, illumination profile, resolution, and processing power. We shall present our approach of a camera-based advanced driver assistance systems (ADAS) named BrightEye™, which makes use of the AGIS technology in the automotive field.

The cooperative voltage sensor motion that gates a potassium channel.

Science.gov (United States)

Pathak, Medha; Kurtz, Lisa; Tombola, Francesco; Isacoff, Ehud

2005-01-01

The four arginine-rich S4 helices of a voltage-gated channel move outward through the membrane in response to depolarization, opening and closing gates to generate a transient ionic current. Coupling of voltage sensing to gating was originally thought to operate with the S4s moving independently from an inward/resting to an outward/activated conformation, so that when all four S4s are activated, the gates are driven to open or closed. However, S4 has also been found to influence the cooperative opening step (Smith-Maxwell et al., 1998a), suggesting a more complex mechanism of coupling. Using fluorescence to monitor structural rearrangements in a Shaker channel mutant, the ILT channel (Ledwell and Aldrich, 1999), that energetically isolates the steps of activation from the cooperative opening step, we find that opening is accompanied by a previously unknown and cooperative movement of S4. This gating motion of S4 appears to be coupled to the internal S6 gate and to two forms of slow inactivation. Our results suggest that S4 plays a direct role in gating. While large transmembrane rearrangements of S4 may be required to unlock the gating machinery, as proposed before, it appears to be the gating motion of S4 that drives the gates to open and close.

A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of Al2O3/HfO2.

Science.gov (United States)

Zou, Xiao; Xu, Jingping; Huang, Hao; Zhu, Ziqang; Wang, Hongjiu; Li, Borui; Liao, Lei; Fang, Guojia

2018-06-15

Top-gated and bottom-gated transistors with multilayer MoS 2 channel fully encapsulated by stacked Al 2 O 3 /HfO 2 (9 nm/6 nm) were fabricated and comparatively studied. Excellent electrical properties are demonstrated for the TG transistors with high on-off current ratio of 10 8 , high field-effect mobility of 10 2 cm 2 V -1 s -1 , and low subthreshold swing of 93 mV dec -1 . Also, enhanced reliability has been achieved for the TG transistors with threshold voltage shift of 10 -3 -10 -2 V MV -1 cm -1 after 6 MV cm -1 gate-biased stressing. All improvement for the TG device can be ascribed to the formed device structure and dielectric environment. Degradation of the performance for the BG transistors should be attributed to reduced gate capacitance density and deteriorated interface properties related to vdW gap with a thickness about 0.4 nm. So, the TG transistor with MoS 2 channel fully encapsulated by stacked Al 2 O 3 /HfO 2 is a promising way to fabricate high-performance ML MoS 2 field-effect transistors for practical electron device applications.

Dose verification for respiratory-gated volumetric modulated arc therapy

Energy Technology Data Exchange (ETDEWEB)

Qian Jianguo; Xing Lei; Liu Wu; Luxton, Gary, E-mail: gluxton@stanford.edu [Department of Radiation Oncology, Stanford University School of Medicine, Stanford, CA 94305 (United States)

2011-08-07

A novel commercial medical linac system (TrueBeam(TM), Varian Medical Systems, Palo Alto, CA) allows respiratory-gated volumetric modulated arc therapy (VMAT), a new modality for treating moving tumors with high precision and improved accuracy by allowing for regular motion associated with a patient's breathing during VMAT delivery. The purpose of this work is to adapt a previously-developed dose reconstruction technique to evaluate the fidelity of VMAT treatment during gated delivery under clinic-relevant periodic motion related to patient breathing. A Varian TrueBeam system was used in this study. VMAT plans were created for three patients with lung or pancreas tumors. Conventional 6 and 15 MV beams with flattening filter and high-dose-rate 10 MV beams with no flattening filter were used in these plans. Each patient plan was delivered to a phantom first without gating and then with gating for three simulated respiratory periods (3, 4.5 and 6 s). Using the adapted log-file-based dose reconstruction procedure supplemented with ion chamber array (Seven29(TM), PTW, Freiburg, Germany) measurements, the delivered dose was used to evaluate the fidelity of gated VMAT delivery. Comparison of Seven29 measurements with and without gating showed good agreement with gamma-index passing rates above 99% for 1%/1 mm dose accuracy/distance-to-agreement criteria. With original plans as reference, gamma-index passing rates were 100% for the reconstituted plans (1%/1 mm criteria) and 93.5-100% for gated Seven29 measurements (3%/3 mm criteria). In the presence of leaf error deliberately introduced into the gated delivery of a pancreas patient plan, both dose reconstruction and Seven29 measurement consistently indicated substantial dosimetric differences from the original plan. In summary, a dose reconstruction procedure was demonstrated for evaluating the accuracy of respiratory-gated VMAT delivery. This technique showed that under clinical operation, the TrueBeam system

Integration of biomolecular logic gates with field-effect transducers

Energy Technology Data Exchange (ETDEWEB)

Poghossian, A., E-mail: a.poghossian@fz-juelich.de [Institute of Nano- and Biotechnologies, Aachen University of Applied Sciences, Campus Juelich, Heinrich-Mussmann-Str. 1, D-52428 Juelich (Germany); Institute of Bio- and Nanosystems, Research Centre Juelich GmbH, D-52425 Juelich (Germany); Malzahn, K. [Institute of Nano- and Biotechnologies, Aachen University of Applied Sciences, Campus Juelich, Heinrich-Mussmann-Str. 1, D-52428 Juelich (Germany); Abouzar, M.H. [Institute of Nano- and Biotechnologies, Aachen University of Applied Sciences, Campus Juelich, Heinrich-Mussmann-Str. 1, D-52428 Juelich (Germany); Institute of Bio- and Nanosystems, Research Centre Juelich GmbH, D-52425 Juelich (Germany); Mehndiratta, P. [Institute of Nano- and Biotechnologies, Aachen University of Applied Sciences, Campus Juelich, Heinrich-Mussmann-Str. 1, D-52428 Juelich (Germany); Katz, E. [Department of Chemistry and Biomolecular Science, NanoBio Laboratory (NABLAB), Clarkson University, Potsdam, NY 13699-5810 (United States); Schoening, M.J. [Institute of Nano- and Biotechnologies, Aachen University of Applied Sciences, Campus Juelich, Heinrich-Mussmann-Str. 1, D-52428 Juelich (Germany); Institute of Bio- and Nanosystems, Research Centre Juelich GmbH, D-52425 Juelich (Germany)

2011-11-01

Highlights: > Enzyme-based AND/OR logic gates are integrated with a capacitive field-effect sensor. > The AND/OR logic gates compose of multi-enzyme system immobilised on sensor surface. > Logic gates were activated by different combinations of chemical inputs (analytes). > The logic output (pH change) produced by the enzymes was read out by the sensor. - Abstract: The integration of biomolecular logic gates with field-effect devices - the basic element of conventional electronic logic gates and computing - is one of the most attractive and promising approaches for the transformation of biomolecular logic principles into macroscopically useable electrical output signals. In this work, capacitive field-effect EIS (electrolyte-insulator-semiconductor) sensors based on a p-Si-SiO{sub 2}-Ta{sub 2}O{sub 5} structure modified with a multi-enzyme membrane have been used for electronic transduction of biochemical signals processed by enzyme-based OR and AND logic gates. The realised OR logic gate composes of two enzymes (glucose oxidase and esterase) and was activated by ethyl butyrate or/and glucose. The AND logic gate composes of three enzymes (invertase, mutarotase and glucose oxidase) and was activated by two chemical input signals: sucrose and dissolved oxygen. The developed integrated enzyme logic gates produce local pH changes at the EIS sensor surface as a result of biochemical reactions activated by different combinations of chemical input signals, while the pH value of the bulk solution remains unchanged. The pH-induced charge changes at the gate-insulator (Ta{sub 2}O{sub 5}) surface of the EIS transducer result in an electronic signal corresponding to the logic output produced by the immobilised enzymes. The logic output signals have been read out by means of a constant-capacitance method.

Integration of biomolecular logic gates with field-effect transducers

International Nuclear Information System (INIS)

Poghossian, A.; Malzahn, K.; Abouzar, M.H.; Mehndiratta, P.; Katz, E.; Schoening, M.J.

2011-01-01

Highlights: → Enzyme-based AND/OR logic gates are integrated with a capacitive field-effect sensor. → The AND/OR logic gates compose of multi-enzyme system immobilised on sensor surface. → Logic gates were activated by different combinations of chemical inputs (analytes). → The logic output (pH change) produced by the enzymes was read out by the sensor. - Abstract: The integration of biomolecular logic gates with field-effect devices - the basic element of conventional electronic logic gates and computing - is one of the most attractive and promising approaches for the transformation of biomolecular logic principles into macroscopically useable electrical output signals. In this work, capacitive field-effect EIS (electrolyte-insulator-semiconductor) sensors based on a p-Si-SiO 2 -Ta 2 O 5 structure modified with a multi-enzyme membrane have been used for electronic transduction of biochemical signals processed by enzyme-based OR and AND logic gates. The realised OR logic gate composes of two enzymes (glucose oxidase and esterase) and was activated by ethyl butyrate or/and glucose. The AND logic gate composes of three enzymes (invertase, mutarotase and glucose oxidase) and was activated by two chemical input signals: sucrose and dissolved oxygen. The developed integrated enzyme logic gates produce local pH changes at the EIS sensor surface as a result of biochemical reactions activated by different combinations of chemical input signals, while the pH value of the bulk solution remains unchanged. The pH-induced charge changes at the gate-insulator (Ta 2 O 5 ) surface of the EIS transducer result in an electronic signal corresponding to the logic output produced by the immobilised enzymes. The logic output signals have been read out by means of a constant-capacitance method.

Gates to the CERN site - Changes and reminder

CERN Multimedia

2006-01-01

I. Gate E New international agreements have been concluded between CERN, Switzerland and France concerning Gate E ('Charles de Gaulle Gate') aimed at reducing congestion at the Prévessin-RN84 and Meyrin Route customs posts, in particular during the work associated with the future Cornavin-Meyrin-CERN tram link. On the basis of these agreements, the Director-General has issued a revised version of the Rules for the use of Gate E (document CERN/DSU-RH/12222/Rev.1 which is available on the Relations with Host States website at: http:/www.cern.ch/relations/), which will enter into force as of 1 December 2006, and includes the following provisions: Gate E is open from Monday to Friday, except on official CERN holidays, from 7.00 a.m. to 9.00 a.m. for access to the site, and from 5.00 p.m. to 7.00 p.m. for departure from the site (instead of 7.30 a.m. to 9.00 a.m. and 5.00 p.m. to 6.30 p.m. respectively). The following persons are authorised to use Gate E: members of the CERN personnel (who may be accompanie...

Gates to the CERN site - Changes and reminder

CERN Multimedia

2006-01-01

I. Gate E New international agreements have been concluded between CERN, Switzerland and France concerning Gate E ('Charles de Gaulle Gate') aimed at reducing congestion at the Prévessin-RN84 and Meyrin Route customs posts, in particular during the work associated with the future Cornavin-Meyrin-CERN tram link. On the basis of these agreements, the Director-General has issued a revised version of the Rules for the use of Gate E (document CERN/DSU-RH/12222/Rev.1 which is available on the Relations with Host States website at: http:/www.cern.ch/relations/), which will enter into force as of 1December 2006, and includes the following provisions: Gate E is open from Monday to Friday, except on official CERN holidays, from 7.00 a.m. to 9.00 a.m. for access to the site, and from 5.00 p.m. to 7.00 p.m. for departure from the site (instead of 7.30 a.m. to 9.00 a.m. and 5.00 p.m. to 6.30 p.m. respectively). The following persons are authorised to use Gate E: members of the CERN personnel (who may be accompani...

Gated-controlled electron pumping in connected quantum rings

International Nuclear Information System (INIS)

Lima, R.P.A.; Domínguez-Adame, F.

2014-01-01

We study the electronic transport across connected quantum rings attached to leads and subjected to time-harmonic side-gate voltages. Using the Floquet formalism, we calculate the net pumped current generated and controlled by the side-gate voltage. The control of the current is achieved by varying the phase shift between the two side-gate voltages as well as the Fermi energy. In particular, the maximum current is reached when the side-gate voltages are in quadrature. This new design based on connected quantum rings controlled without magnetic fields can be easily integrated in standard electronic devices. - Highlights: • We introduce and study a minimal setup to pump electrons through connected quantum rings. • Quantum pumping is achieved by time-harmonic side-gate voltages instead of the more conventional time-dependent magnetic fluxes. • Our new design could be easily integrated in standard electronic devices

Possibilities Of Opening Up the Stage-Gate Model

Directory of Open Access Journals (Sweden)

Biljana Stošić

2014-12-01

Full Text Available The paper presents basic elements of the Stage-Gate and Open innovation models, and possible connection of these two, resulting in what is frequently called an “Open Stage-Gate” model. This connection is based on opening up the new product development process and integration of the open innovation principles with the Stage-Gate concept, facilitating the import and export of information and technologies. Having in mind that the Stage Gate has originally been classified as the third generation model of innovation, the paper is dealing with the capabilities for applying the sixth generation Open innovation principles in today’s improved and much more flexible phases and gates of the Stage Gate. Lots of innovative companies are actually using both models in their NPD practice, looking for the most appropriate means of opening up the well-known closed innovation, especially in the domain of ideation through co-creation.

Quantum design rules for single molecule logic gates.

Science.gov (United States)

Renaud, N; Hliwa, M; Joachim, C

2011-08-28

Recent publications have demonstrated how to implement a NOR logic gate with a single molecule using its interaction with two surface atoms as logical inputs [W. Soe et al., ACS Nano, 2011, 5, 1436]. We demonstrate here how this NOR logic gate belongs to the general family of quantum logic gates where the Boolean truth table results from a full control of the quantum trajectory of the electron transfer process through the molecule by very local and classical inputs practiced on the molecule. A new molecule OR gate is proposed for the logical inputs to be also single metal atoms, one per logical input.

Reduction of skin effect losses in double-level-T-gate structure

Energy Technology Data Exchange (ETDEWEB)

Mikulics, M., E-mail: m.mikulics@fz-juelich.de; Hardtdegen, H.; Arango, Y. C.; Adam, R.; Fox, A.; Grützmacher, D. [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich (Germany); Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, D-52425 Jülich (Germany); Gregušová, D.; Novák, J. [Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava (Slovakia); Stanček, S. [Department of Nuclear Physic and Technique, Slovak University of Technology, SK-81219 Bratislava (Slovakia); Kordoš, P. [Institute of Electronics and Photonics, Slovak University of Technology, SK-81219 Bratislava (Slovakia); Sofer, Z. [Department of Inorganic Chemistry, Institute of Chemical Technology, Technická 5, Prague 6 (Czech Republic); Juul, L.; Marso, M. [Faculté des Sciences, de la Technologie et de la Communication, Université du Luxembourg, L-1359 Luxembourg (Luxembourg)

2014-12-08

We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structures used for fabrication of High Electron Mobility Transistors (HEMT). Major advantages of our process are the use of only standard photolithographic process and the ability to generate T-gate stacks. A HEMT fabricated on AlGaN/GaN/sapphire with gate length L{sub g} = 200 nm and double-stacked T-gates exhibits 60 GHz cutoff frequency showing ten-fold improvement compared to 6 GHz for the same device with 2 μm gate length. HEMTs with a double-level-T-gate (DLTG) structure exhibit up to 35% improvement of f{sub max} value compared to a single T-gate device. This indicates a significant reduction of skin effect losses in DLTG structure compared to its standard T-gate counterpart. These results agree with the theoretical predictions.

The impact of gate width setting and gate utilization factors on plutonium assay in passive correlated neutron counting

International Nuclear Information System (INIS)

Henzlova, D.; Menlove, H.O.; Croft, S.; Favalli, A.; Santi, P.

2015-01-01

In the field of nuclear safeguards, passive neutron multiplicity counting (PNMC) is a method typically employed in non-destructive assay (NDA) of special nuclear material (SNM) for nonproliferation, verification and accountability purposes. PNMC is generally performed using a well-type thermal neutron counter and relies on the detection of correlated pairs or higher order multiplets of neutrons emitted by an assayed item. To assay SNM, a set of parameters for a given well-counter is required to link the measured multiplicity rates to the assayed item properties. Detection efficiency, die-away time, gate utilization factors (tightly connected to die-away time) as well as optimum gate width setting are among the key parameters. These parameters along with the underlying model assumptions directly affect the accuracy of the SNM assay. In this paper we examine the role of gate utilization factors and the single exponential die-away time assumption and their impact on the measurements for a range of plutonium materials. In addition, we examine the importance of item-optimized coincidence gate width setting as opposed to using a universal gate width value. Finally, the traditional PNMC based on multiplicity shift register electronics is extended to Feynman-type analysis and application of this approach to Pu mass assay is demonstrated

The impact of gate width setting and gate utilization factors on plutonium assay in passive correlated neutron counting

Energy Technology Data Exchange (ETDEWEB)

Henzlova, D., E-mail: henzlova@lanl.gov [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Menlove, H.O. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Croft, S. [Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Favalli, A.; Santi, P. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

2015-10-11

In the field of nuclear safeguards, passive neutron multiplicity counting (PNMC) is a method typically employed in non-destructive assay (NDA) of special nuclear material (SNM) for nonproliferation, verification and accountability purposes. PNMC is generally performed using a well-type thermal neutron counter and relies on the detection of correlated pairs or higher order multiplets of neutrons emitted by an assayed item. To assay SNM, a set of parameters for a given well-counter is required to link the measured multiplicity rates to the assayed item properties. Detection efficiency, die-away time, gate utilization factors (tightly connected to die-away time) as well as optimum gate width setting are among the key parameters. These parameters along with the underlying model assumptions directly affect the accuracy of the SNM assay. In this paper we examine the role of gate utilization factors and the single exponential die-away time assumption and their impact on the measurements for a range of plutonium materials. In addition, we examine the importance of item-optimized coincidence gate width setting as opposed to using a universal gate width value. Finally, the traditional PNMC based on multiplicity shift register electronics is extended to Feynman-type analysis and application of this approach to Pu mass assay is demonstrated.

Ballistic transport of graphene pnp junctions with embedded local gates

International Nuclear Information System (INIS)

Nam, Seung-Geol; Ki, Dong-Keun; Kim, Youngwook; Kim, Jun Sung; Lee, Hu-Jong; Park, Jong Wan

2011-01-01

We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither deposition of dielectric material on the graphene nor electron-beam irradiation, we obtained high-quality graphene pnp devices without degradation of the carrier mobility even in the local-gate region. The corresponding increased mean free path leads to the observation of ballistic and phase-coherent transport across a local gate 130 nm wide, which is about an order of magnitude wider than reported previously. Furthermore, in our scheme, we demonstrated independent control of the carrier density in the local-gate region, with a conductance map very much distinct from those of top-gated devices. This was caused by the electric field arising from the global back gate being strongly screened by the embedded local gate. Our scheme allows the realization of ideal multipolar graphene junctions with ballistic carrier transport.

Oracle GoldenGate 12c implementer's guide

CERN Document Server

Jeffries, John P

2015-01-01

The book is aimed at Oracle database administrators, project managers, and solution architects who wish to extend their knowledge of GoldenGate. The reader is assumed to be familiar with Oracle databases. No knowledge of GoldenGate is required.

Gated myocardial SPECT using spatial and temporal filtering

International Nuclear Information System (INIS)

Hatton, R.L.; Hutton, B.F.; Kyme, A.Z.; Larcos, G.

2002-01-01

Full text: Standard protocols for examining myocardial perfusion and motion defects involve the use of gated SPECT images, and a composite of the gated frames. This study examines the usefulness of extracting one or a combination of frames from the gated image to assess perfusion, and whether the addition of a temporal filter to the gated image improves signal to noise. Choice of the most appropriate frame was also considered. Sixteen and eight frame gated SPECT studies were simulated using the dynamic NURBS-based cardiac torso (NCAT) phantom. Variously sized perfusion defects were included in the inferior wall to assess contrast to normal tissue. Scatter and attenuation were not included. Butterworth spatial cutoff frequencies were varied to establish the most appropriate combination of temporal/spatial filters to reduce noise and retain contrast in the images. The 16 frame data produced higher ejection fraction across all spatial filter cutoffs, and generally was unaffected by temporal filtering. Temporal filtering reduced the noise in a uniform liver region in the gated images to within 25% of the composite image noise. The lesion extent and contrast were greater in the end-diastolic frames compared to end-systolic and mid-cycle frames. In conclusion, by using a temporally filtered end-diastolic image from the gated sequence, a favourable balance between noise and contrast can be achieved. Work is progress to confirm these findings in the clinical situation. Copyright (2002) The Australian and New Zealand Society of Nuclear Medicine Inc

Reconfigurable chaotic logic gates based on novel chaotic circuit

International Nuclear Information System (INIS)

Behnia, S.; Pazhotan, Z.; Ezzati, N.; Akhshani, A.

2014-01-01

Highlights: • A novel method for implementing logic gates based on chaotic maps is introduced. • The logic gates can be implemented without any changes in the threshold voltage. • The chaos-based logic gates may serve as basic components of future computing devices. - Abstract: The logical operations are one of the key issues in today’s computer architecture. Nowadays, there is a great interest in developing alternative ways to get the logic operations by chaos computing. In this paper, a novel implementation method of reconfigurable logic gates based on one-parameter families of chaotic maps is introduced. The special behavior of these chaotic maps can be utilized to provide same threshold voltage for all logic gates. However, there is a wide interval for choosing a control parameter for all reconfigurable logic gates. Furthermore, an experimental implementation of this nonlinear system is presented to demonstrate the robustness of computing capability of chaotic circuits

Instantons in Self-Organizing Logic Gates

Science.gov (United States)

Bearden, Sean R. B.; Manukian, Haik; Traversa, Fabio L.; Di Ventra, Massimiliano

2018-03-01

Self-organizing logic is a recently suggested framework that allows the solution of Boolean truth tables "in reverse"; i.e., it is able to satisfy the logical proposition of gates regardless to which terminal(s) the truth value is assigned ("terminal-agnostic logic"). It can be realized if time nonlocality (memory) is present. A practical realization of self-organizing logic gates (SOLGs) can be done by combining circuit elements with and without memory. By employing one such realization, we show, numerically, that SOLGs exploit elementary instantons to reach equilibrium points. Instantons are classical trajectories of the nonlinear equations of motion describing SOLGs and connect topologically distinct critical points in the phase space. By linear analysis at those points, we show that these instantons connect the initial critical point of the dynamics, with at least one unstable direction, directly to the final fixed point. We also show that the memory content of these gates affects only the relaxation time to reach the logically consistent solution. Finally, we demonstrate, by solving the corresponding stochastic differential equations, that, since instantons connect critical points, noise and perturbations may change the instanton trajectory in the phase space but not the initial and final critical points. Therefore, even for extremely large noise levels, the gates self-organize to the correct solution. Our work provides a physical understanding of, and can serve as an inspiration for, models of bidirectional logic gates that are emerging as important tools in physics-inspired, unconventional computing.

Voltage-gated proton channel is expressed on phagosomes

International Nuclear Information System (INIS)

Okochi, Yoshifumi; Sasaki, Mari; Iwasaki, Hirohide; Okamura, Yasushi

2009-01-01

Voltage-gated proton channel has been suggested to help NADPH oxidase activity during respiratory burst of phagocytes through its activities of compensating charge imbalance and regulation of pH. In phagocytes, robust production of reactive oxygen species occurs in closed membrane compartments, which are called phagosomes. However, direct evidence for the presence of voltage-gated proton channels in phagosome has been lacking. In this study, the expression of voltage-gated proton channels was studied by Western blot with the antibody specific to the voltage-sensor domain protein, VSOP/Hv1, that has recently been identified as the molecular correlate for the voltage-gated proton channel. Phagosomal membranes of neutrophils contain VSOP/Hv1 in accordance with subunits of NADPH oxidases, gp91, p22, p47 and p67. Superoxide anion production upon PMA activation was significantly reduced in neutrophils from VSOP/Hv1 knockout mice. These are consistent with the idea that voltage-gated proton channels help NADPH oxidase in phagocytes to produce reactive oxygen species.

Robustness against parametric noise of nonideal holonomic gates

International Nuclear Information System (INIS)

Lupo, Cosmo; Aniello, Paolo; Napolitano, Mario; Florio, Giuseppe

2007-01-01

Holonomic gates for quantum computation are commonly considered to be robust against certain kinds of parametric noise, the cause of this robustness being the geometric character of the transformation achieved in the adiabatic limit. On the other hand, the effects of decoherence are expected to become more and more relevant when the adiabatic limit is approached. Starting from the system described by Florio et al. [Phys. Rev. A 73, 022327 (2006)], here we discuss the behavior of nonideal holonomic gates at finite operational time, i.e., long before the adiabatic limit is reached. We have considered several models of parametric noise and studied the robustness of finite-time gates. The results obtained suggest that the finite-time gates present some effects of cancellation of the perturbations introduced by the noise which mimic the geometrical cancellation effect of standard holonomic gates. Nevertheless, a careful analysis of the results leads to the conclusion that these effects are related to a dynamical instead of a geometrical feature

Robustness against parametric noise of nonideal holonomic gates

Science.gov (United States)

Lupo, Cosmo; Aniello, Paolo; Napolitano, Mario; Florio, Giuseppe

2007-07-01

Holonomic gates for quantum computation are commonly considered to be robust against certain kinds of parametric noise, the cause of this robustness being the geometric character of the transformation achieved in the adiabatic limit. On the other hand, the effects of decoherence are expected to become more and more relevant when the adiabatic limit is approached. Starting from the system described by Florio [Phys. Rev. A 73, 022327 (2006)], here we discuss the behavior of nonideal holonomic gates at finite operational time, i.e., long before the adiabatic limit is reached. We have considered several models of parametric noise and studied the robustness of finite-time gates. The results obtained suggest that the finite-time gates present some effects of cancellation of the perturbations introduced by the noise which mimic the geometrical cancellation effect of standard holonomic gates. Nevertheless, a careful analysis of the results leads to the conclusion that these effects are related to a dynamical instead of a geometrical feature.

Formation of multipartite entanglement using random quantum gates

International Nuclear Information System (INIS)

Most, Yonatan; Shimoni, Yishai; Biham, Ofer

2007-01-01

The formation of multipartite quantum entanglement by repeated operation of one- and two-qubit gates is examined. The resulting entanglement is evaluated using two measures: the average bipartite entanglement and the Groverian measure. A comparison is made between two geometries of the quantum register: a one-dimensional chain in which two-qubit gates apply only locally between nearest neighbors and a nonlocal geometry in which such gates may apply between any pair of qubits. More specifically, we use a combination of random single-qubit rotations and a fixed two-qubit gate such as the controlled-phase gate. It is found that in the nonlocal geometry the entanglement is generated at a higher rate. In both geometries, the Groverian measure converges to its asymptotic value more slowly than the average bipartite entanglement. These results are expected to have implications on different proposed geometries of future quantum computers with local and nonlocal interactions between the qubits

Voltage-Dependent Gating of hERG Potassium Channels

Science.gov (United States)

Cheng, Yen May; Claydon, Tom W.

2012-01-01

The mechanisms by which voltage-gated channels sense changes in membrane voltage and energetically couple this with opening of the ion conducting pore has been the source of significant interest. In voltage-gated potassium (Kv) channels, much of our knowledge in this area comes from Shaker-type channels, for which voltage-dependent gating is quite rapid. In these channels, activation and deactivation are associated with rapid reconfiguration of the voltage-sensing domain unit that is electromechanically coupled, via the S4–S5 linker helix, to the rate-limiting opening of an intracellular pore gate. However, fast voltage-dependent gating kinetics are not typical of all Kv channels, such as Kv11.1 (human ether-à-go-go related gene, hERG), which activates and deactivates very slowly. Compared to Shaker channels, our understanding of the mechanisms underlying slow hERG gating is much poorer. Here, we present a comparative review of the structure–function relationships underlying activation and deactivation gating in Shaker and hERG channels, with a focus on the roles of the voltage-sensing domain and the S4–S5 linker that couples voltage sensor movements to the pore. Measurements of gating current kinetics and fluorimetric analysis of voltage sensor movement are consistent with models suggesting that the hERG activation pathway contains a voltage independent step, which limits voltage sensor transitions. Constraints upon hERG voltage sensor movement may result from loose packing of the S4 helices and additional intra-voltage sensor counter-charge interactions. More recent data suggest that key amino acid differences in the hERG voltage-sensing unit and S4–S5 linker, relative to fast activating Shaker-type Kv channels, may also contribute to the increased stability of the resting state of the voltage sensor. PMID:22586397

Voltage-dependent gating of hERG potassium channels

Directory of Open Access Journals (Sweden)

Yen May eCheng

2012-05-01

Full Text Available The mechanisms by which voltage-gated channels sense changes in membrane voltage and energetically couple this with opening of the ion conducting pore has been the source of significant interest. In voltage-gated potassium (Kv channels, much of our knowledge in this area comes from Shaker-type channels, for which voltage-dependent gating is quite rapid. In these channels, activation and deactivation are associated with rapid reconfiguration of the voltage-sensing domain unit that is electromechanically coupled, via the S4-S5 linker helix, to the rate-limiting opening of an intracellular pore gate. However, fast voltage-dependent gating kinetics are not typical of all Kv channels, such as Kv11.1 (human ether-a-go-go related gene, hERG, which activates and deactivates very slowly. Compared to Shaker channels, our understanding of the mechanisms underlying slow hERG gating is much poorer. Here, we present a comparative review of the structure-function relationships underlying voltage-dependent gating in Shaker and hERG channels, with a focus on the roles of the voltage sensing domain and the S4-S5 linker that couples voltage sensor movements to the pore. Measurements of gating current kinetics and fluorimetric analysis of voltage sensor movement are consistent with models suggesting that the hERG activation pathway contains a voltage independent step, which limits voltage sensor transitions. Constraints upon hERG voltage sensor movement may result from loose packing of the S4 helices and additional intra-voltage sensor counter charge interactions. More recent data suggest that key amino acid differences in the hERG voltage sensing unit and S4-S5 linker, relative to fast activating Shaker-type Kv channels, may also contribute to the increased stability of the resting state of the voltage sensor.

Flexible Proton-Gated Oxide Synaptic Transistors on Si Membrane.

Science.gov (United States)

Zhu, Li Qiang; Wan, Chang Jin; Gao, Ping Qi; Liu, Yang Hui; Xiao, Hui; Ye, Ji Chun; Wan, Qing

2016-08-24

Ion-conducting materials have received considerable attention for their applications in fuel cells, electrochemical devices, and sensors. Here, flexible indium zinc oxide (InZnO) synaptic transistors with multiple presynaptic inputs gated by proton-conducting phosphorosilicate glass-based electrolyte films are fabricated on ultrathin Si membranes. Transient characteristics of the proton gated InZnO synaptic transistors are investigated, indicating stable proton-gating behaviors. Short-term synaptic plasticities are mimicked on the proposed proton-gated synaptic transistors. Furthermore, synaptic integration regulations are mimicked on the proposed synaptic transistor networks. Spiking logic modulations are realized based on the transition between superlinear and sublinear synaptic integration. The multigates coupled flexible proton-gated oxide synaptic transistors may be interesting for neuroinspired platforms with sophisticated spatiotemporal information processing.

Bounding quantum gate error rate based on reported average fidelity

International Nuclear Information System (INIS)

Sanders, Yuval R; Wallman, Joel J; Sanders, Barry C

2016-01-01

Remarkable experimental advances in quantum computing are exemplified by recent announcements of impressive average gate fidelities exceeding 99.9% for single-qubit gates and 99% for two-qubit gates. Although these high numbers engender optimism that fault-tolerant quantum computing is within reach, the connection of average gate fidelity with fault-tolerance requirements is not direct. Here we use reported average gate fidelity to determine an upper bound on the quantum-gate error rate, which is the appropriate metric for assessing progress towards fault-tolerant quantum computation, and we demonstrate that this bound is asymptotically tight for general noise. Although this bound is unlikely to be saturated by experimental noise, we demonstrate using explicit examples that the bound indicates a realistic deviation between the true error rate and the reported average fidelity. We introduce the Pauli distance as a measure of this deviation, and we show that knowledge of the Pauli distance enables tighter estimates of the error rate of quantum gates. (fast track communication)

Feedback Gating Control for Network Based on Macroscopic Fundamental Diagram

Directory of Open Access Journals (Sweden)

YangBeibei Ji

2016-01-01

Full Text Available Empirical data from Yokohama, Japan, showed that a macroscopic fundamental diagram (MFD of urban traffic provides for different network regions a unimodal low-scatter relationship between network vehicle density and network space-mean flow. This provides new tools for network congestion control. Based on MFD, this paper proposed a feedback gating control policy which can be used to mitigate network congestion by adjusting signal timings of gating intersections. The objective of the feedback gating control model is to maximize the outflow and distribute the allowed inflows properly according to external demand and capacity of each gating intersection. An example network is used to test the performance of proposed feedback gating control model. Two types of background signalization types for the intersections within the test network, fixed-time and actuated control, are considered. The results of extensive simulation validate that the proposed feedback gating control model can get a Pareto improvement since the performance of both gating intersections and the whole network can be improved significantly especially under heavy demand situations. The inflows and outflows can be improved to a higher level, and the delay and queue length at all gating intersections are decreased dramatically.

Bias stress instability of double-gate a-IGZO TFTs on polyimide substrate

Science.gov (United States)

Cho, Won-Ju; Ahn, Min-Ju

2017-09-01

In this study, flexible double-gate thin-film transistor (TFT)-based amorphous indium-galliumzinc- oxide (a-IGZO) was fabricated on a polyimide substrate. Double-gate operation with connected front and back gates was compared with a single-gate operation. As a result, the double-gate a- IGZO TFT exhibited enhanced electrical characteristics as well as improved long-term reliability. Under positive- and negative-bias temperature stress, the threshold voltage shift of the double-gate operation was much smaller than that of the single-gate operation.

Voltage gating of mechanosensitive PIEZO channels.

Science.gov (United States)

Moroni, Mirko; Servin-Vences, M Rocio; Fleischer, Raluca; Sánchez-Carranza, Oscar; Lewin, Gary R

2018-03-15

Mechanosensitive PIEZO ion channels are evolutionarily conserved proteins whose presence is critical for normal physiology in multicellular organisms. Here we show that, in addition to mechanical stimuli, PIEZO channels are also powerfully modulated by voltage and can even switch to a purely voltage-gated mode. Mutations that cause human diseases, such as xerocytosis, profoundly shift voltage sensitivity of PIEZO1 channels toward the resting membrane potential and strongly promote voltage gating. Voltage modulation may be explained by the presence of an inactivation gate in the pore, the opening of which is promoted by outward permeation. Older invertebrate (fly) and vertebrate (fish) PIEZO proteins are also voltage sensitive, but voltage gating is a much more prominent feature of these older channels. We propose that the voltage sensitivity of PIEZO channels is a deep property co-opted to add a regulatory mechanism for PIEZO activation in widely different cellular contexts.

Respiratory gated radiotherapy: current techniques and potential benefits

International Nuclear Information System (INIS)

Giraud, P.; Campana, F.; Rosenwald, J.C.; Cosset, J.M.; Reboul, F.; Garcia, R.; Clippe, S.; Carrie, C.; Dubray, B.

2003-01-01

Respiration-gated radiotherapy offers a significant potential for improvement in the irradiation of tumor sites affected by respiratory motion such as lung, breast and liver tumors. An increased conformality of irradiation fields leading to decreased complications rates of organs at risk (lung, heart...) is expected. Respiratory gating is in line with the need for improved precision required by radiotherapy techniques such as 3D conformal radiotherapy or intensity modulated radiotherapy. Reduction of respiratory motion can be achieved by using either breath hold techniques or respiration synchronized gating techniques. Breath-hold techniques can be achieved with active, in which airflow of the patient is temporarily blocked by a valve, or passive techniques, in which the patient voluntarily breath-hold. Synchronized gating techniques use external devices to predict the phase of the respiration cycle while the patient breaths freely. These techniques presently investigated in several medical centers worldwide. Although promising, the first results obtained in lung and liver cancer patients require confirmation. Physical, technical and physiological questions still remain to be answered. This paper describes the most frequently used gated techniques and the main published clinical reports on the use of respiration-gated radiotherapy in order to evaluate the impact of these techniques. (author)

An integer programming model for gate assignment problem at airline terminals

Science.gov (United States)

Chun, Chong Kok; Nordin, Syarifah Zyurina

2015-05-01

In this paper, we concentrate on a gate assignment problem (GAP) at the airlines terminal. Our problem is to assign an arrival plane to a suitable gate. There are two considerations needed to take. One of its is passenger walking distance from arrival gate to departure gate while another consideration is the transport baggage distance from one gate to another. Our objective is to minimize the total distance between the gates that related to assign the arrival plane to the suitable gates. An integer linear programming (ILP) model is proposed to solve this gate assignment problem. We also conduct a computational experiment using CPLEX 12.1 solver in AIMMS 3.10 software to analyze the performance of the model. Results of the computational experiments are presented. The efficiency of flights assignment is depends on the ratio of the weight for both total passenger traveling distances and total baggage transport distances.

Four-gate transistor analog multiplier circuit

Science.gov (United States)

Mojarradi, Mohammad M. (Inventor); Blalock, Benjamin (Inventor); Cristoloveanu, Sorin (Inventor); Chen, Suheng (Inventor); Akarvardar, Kerem (Inventor)

2011-01-01

A differential output analog multiplier circuit utilizing four G.sup.4-FETs, each source connected to a current source. The four G.sup.4-FETs may be grouped into two pairs of two G.sup.4-FETs each, where one pair has its drains connected to a load, and the other par has its drains connected to another load. The differential output voltage is taken at the two loads. In one embodiment, for each G.sup.4-FET, the first and second junction gates are each connected together, where a first input voltage is applied to the front gates of each pair, and a second input voltage is applied to the first junction gates of each pair. Other embodiments are described and claimed.

CEPF Western Ghats Special Series : Parasitoids (Hymenoptera of xylophagous beetles (Coleoptera attacking dead wood in southern Western Ghats, Kerala, India, with descriptions of two new species

Directory of Open Access Journals (Sweden)

P.M. Sureshan

2013-05-01

Full Text Available An account is given of four species of Hymenoptera parasitoids probably of the wood boring beetle Clytocera chinospila Gahan (Coleoptera: Cerambycidae from Chinnar Wildlife Sanctuary, southern Western Ghats, Kerala. Two new hymenopteran species, Eurytoma chinnarensis (Eurytomidae and Foenatopus idukkiensis (Stephanidae are described. Solenura ania Walker (Pteromalidae is reported for the first time from Kerala and Western Ghats with a new host record, and Doryctus sp. (Braconidae is reported here.

Ant Colony Algorithm and Simulation for Robust Airport Gate Assignment

Directory of Open Access Journals (Sweden)

Hui Zhao

2014-01-01

Full Text Available Airport gate assignment is core task for airport ground operations. Due to the fact that the departure and arrival time of flights may be influenced by many random factors, the airport gate assignment scheme may encounter gate conflict and many other problems. This paper aims at finding a robust solution for airport gate assignment problem. A mixed integer model is proposed to formulate the problem, and colony algorithm is designed to solve this model. Simulation result shows that, in consideration of robustness, the ability of antidisturbance for airport gate assignment scheme has much improved.

Robustness of holonomic quantum gates

International Nuclear Information System (INIS)

Solinas, P.; Zanardi, P.; Zanghi, N.

2005-01-01

Full text: If the driving field fluctuates during the quantum evolution this produces errors in the applied operator. The holonomic (and geometrical) quantum gates are believed to be robust against some kind of noise. Because of the geometrical dependence of the holonomic operators can be robust against this kind of noise; in fact if the fluctuations are fast enough they cancel out leaving the final operator unchanged. I present the numerical studies of holonomic quantum gates subject to this parametric noise, the fidelity of the noise and ideal evolution is calculated for different noise correlation times. The holonomic quantum gates seem robust not only for fast fluctuating fields but also for slow fluctuating fields. These results can be explained as due to the geometrical feature of the holonomic operator: for fast fluctuating fields the fluctuations are canceled out, for slow fluctuating fields the fluctuations do not perturb the loop in the parameter space. (author)

Reference Range of Functional Data of Gated Myocardial Perfusion SPECT by Quantitative Gated SPECT of Cedars-Sinai and 4D-MSPECT of Michigan University

Energy Technology Data Exchange (ETDEWEB)

Kang, Do Young; Kim, Moo Hyun; Kim, Young Dae [College of Medicine, Univ. of Donga, Pusan (Korea, Republic of)

2003-07-01

Various programs have been developed for gating of myocardial perfusion SPECT. Among the those program, the most popular program is the Quantitative Gated SPECT (QGS)? developed by Cedars-Sinai hospital and most recently released program is 4D-MSPECT? developed by university of Michigan. It is important to know the reference range of the functional data of gated myocardial perfusion SPECT because it is necessary to determine abnormality of individual patient and echocardiographic data is different from those of gated SPECT. Tc-99m MIBI gated myocardial perfusion SPECT image was reconstructed by dual head gamma camera (Siemens, BCAM, esoft) as routine procedure and analyzed using QGS? and 4D-MSPECT? program. All patients (M: F=9: 18, Age 69{+-}9 yrs) showed normal myocardial perfusion. The patients with following characteristics were excluded: previous angina or MI history, ECG change with Q wave or ST-T change, diabetes melitius, hypercholesterolemia, typical chest pain, hypertension and cardiomyopathy. Pre-test likelihood of all patients was low. (1) In stress gated SPECT by QGS?, EDV was 73{+-}25 ml, ESV 25{+-}14 ml, EF 67{+-}11 % and area of first frame of gating 106.4{+-}21cm{sup 2}. In rest gated SPECT, EDV was 76{+-}26 ml, ESV 27{+-}15 ml, EF 66{+-}12 and area of first frame of gating 108{+-}20cm{sup 2}. (2) In stress gated SPECT by 4D-MSPECT?, EDV was 76{+-}28 ml, ESV 23{+-}16 ml, EF 72{+-}11 %, mass 115{+-}24 g and ungated volume 42{+-}15 ml. In rest gated SPECT, EDV was 75{+-}27 ml, ESV 23{+-}12 ml, EF 71{+-}9%, mass 113{+-}25g and ungate dvolume 42{+-}15 ml, (3) s-EDV, s-EF, r-ESV and r-EF were significantly different between QGS? and 4D-MSPECT? (each p=0.016, p<0.001. p=0.003 and p=0.001). We determined the normal reference range of functional parameters by QGS? and 4D-MSPECT? program to diagnose individually the abnormality of patients. And the reference ranges have to adopted to be patients by each specific gating program.

The effects of transistor source-to-gate bridging faults in complex CMOS gates

Science.gov (United States)

Visweswaran, G. S.; Ali, Akhtar-Uz-Zaman M.; Lala, Parag K.; Hartmann, Carlos R. P.

1991-06-01

A study of the effect of gate-to-source bridging faults in the pull-up section of a complex CMOS gate is presented. The manifestation of these faults depends on the resistance value of the connection causing the bridging. It is shown that such faults manifest themselves either as stuck-at or stuck-open faults and can be detected by tests for stuck-at and stuck-open faults generated for the equivalent logic current. It is observed that for transistor channel lengths larger than 1 microns there exists a range of values of the bridging resistance for which the fault behaves as a pseudo-stuck-open fault.

Optical Co-Incidence Gate | Srinivasulu | African Journal of Science ...

African Journals Online (AJOL)

The paper explains Optical co-incidence gate, realized using Unijunction transistors (UJT), Light emitting diodes (LED) and Photo-resistors (LDR), which works on 1.8Vdc instead of 3Vdc. The power dissipation of the designed gate is only 3 mW. This optical gate finds application in the field of Mechatronics, Instrumentation ...

Characteristics of dual-gate thin-film transistors for applications in digital radiology

International Nuclear Information System (INIS)

Waechter, D.; Huang, Z.; Zhao, W.; Blevis, I.; Rowlands, J.A.

1996-01-01

A large-area flat-panel detector for digital radiology is being developed. The detector uses an array of dual-gate thin-film transistors (TFTs) to read out X-ray-generated charge produced in an amorphous selenium (a-Se) layer. The TFTs use CdSe as the semiconductor and use the bottom gate for row selection. The top gate can be divided into a 'deliberate' gate, covering most of the channel length, and small 'parasitic' gates that consist of: overlap of source or drain metal over the top-gate oxide; and gap regions in the metal that are covered only by the a-Se. In this paper we present the properties of dual-gate TFTs and examine the effect of both the deliberate and parasitic gates on the detector operation. Various options for controlling the top-gate potential are analyzed and discussed. (author)

Bias-induced migration of ionized donors in amorphous oxide semiconductor thin-film transistors with full bottom-gate and partial top-gate structures

Directory of Open Access Journals (Sweden)

Mallory Mativenga

2012-09-01

Full Text Available Bias-induced charge migration in amorphous oxide semiconductor thin-film transistors (TFTs confirmed by overshoots of mobility after bias stressing dual gated TFTs is presented. The overshoots in mobility are reversible and only occur in TFTs with a full bottom-gate (covers the whole channel and partial top-gate (covers only a portion of the channel, indicating a bias-induced uneven distribution of ionized donors: Ionized donors migrate towards the region of the channel that is located underneath the partial top-gate and the decrease in the density of ionized donors in the uncovered portion results in the reversible increase in mobility.

Investigating degradation behavior of hole-trapping effect under static and dynamic gate-bias stress in a dual gate a-InGaZnO thin film transistor with etch stop layer

Energy Technology Data Exchange (ETDEWEB)

Liao, Po-Yung [Department of Physics, National Sun Yat-sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang3708@gmail.com [Department of Physics, National Sun Yat-sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Hsieh, Tien-Yu [Department of Physics, National Sun Yat-sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan (China); Tsai, Ming-Yen; Chen, Bo-Wei; Chu, Ann-Kuo [Department of Photonics, National Sun Yat-Sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan (China); Chou, Cheng-Hsu; Chang, Jung-Fang [Product Technology Center, Chimei Innolux Corp., Tainan 741, Taiwan (China)

2016-03-31

The degree of degradation between the amorphous-indium–gallium–zinc oxide (a-IGZO) thin film transistor (TFT) using the top-gate only or bottom-gate only is compared. Under negative gate bias illumination stress (NBIS), the threshold voltage (V{sub T}) after bottom-gate NBIS monotonically shifts in the negative direction, whereas top-gate NBIS operation exhibits on-state current increases without V{sub T} shift. Such anomalous degradation behavior of NBIS under top-gate operation is due to hole-trapping in the etch stop layer above the central portion of the channel. These phenomena can be ascribed to the screening of the electric field by redundant source/drain electrodes. In addition, the device degradation of dual gate a-IGZO TFT stressed with different top gate pulse waveforms is investigated. It is observed that the degradation is dependent on the frequency of the top gate pulses. The V{sub T} shift increases with decreasing frequency, indicating the hole mobility of IGZO is low. - Highlights: • Static and dynamic gate bias stresses are imposed on dual gate InGaZnO TFTs. • Top-gate NBIS operation exhibits on-state current increases without VT shift. • The degradation behavior of top-gate NBIS is due to hole-trapping in the ESL. • The degradation is dependent on the frequency of the top gate pulses. • The V{sub T} shift increases with decreasing frequency of the top gate pulses.

Investigating degradation behavior of hole-trapping effect under static and dynamic gate-bias stress in a dual gate a-InGaZnO thin film transistor with etch stop layer

International Nuclear Information System (INIS)

Liao, Po-Yung; Chang, Ting-Chang; Hsieh, Tien-Yu; Tsai, Ming-Yen; Chen, Bo-Wei; Chu, Ann-Kuo; Chou, Cheng-Hsu; Chang, Jung-Fang

2016-01-01

The degree of degradation between the amorphous-indium–gallium–zinc oxide (a-IGZO) thin film transistor (TFT) using the top-gate only or bottom-gate only is compared. Under negative gate bias illumination stress (NBIS), the threshold voltage (V T ) after bottom-gate NBIS monotonically shifts in the negative direction, whereas top-gate NBIS operation exhibits on-state current increases without V T shift. Such anomalous degradation behavior of NBIS under top-gate operation is due to hole-trapping in the etch stop layer above the central portion of the channel. These phenomena can be ascribed to the screening of the electric field by redundant source/drain electrodes. In addition, the device degradation of dual gate a-IGZO TFT stressed with different top gate pulse waveforms is investigated. It is observed that the degradation is dependent on the frequency of the top gate pulses. The V T shift increases with decreasing frequency, indicating the hole mobility of IGZO is low. - Highlights: • Static and dynamic gate bias stresses are imposed on dual gate InGaZnO TFTs. • Top-gate NBIS operation exhibits on-state current increases without VT shift. • The degradation behavior of top-gate NBIS is due to hole-trapping in the ESL. • The degradation is dependent on the frequency of the top gate pulses. • The V T shift increases with decreasing frequency of the top gate pulses.

Quantitative Determination on Ionic-Liquid-Gating Control of Interfacial Magnetism.

Science.gov (United States)

Zhao, Shishun; Zhou, Ziyao; Peng, Bin; Zhu, Mingmin; Feng, Mengmeng; Yang, Qu; Yan, Yuan; Ren, Wei; Ye, Zuo-Guang; Liu, Yaohua; Liu, Ming

2017-05-01

Ionic-liquid gating on a functional thin film with a low voltage has drawn a lot of attention due to rich chemical, electronic, and magnetic phenomena at the interface. Here, a key challenge in quantitative determination of voltage-controlled magnetic anisotropy (VCMA) in Au/[DEME] + [TFSI] - /Co field-effect transistor heterostructures is addressed. The magnetic anisotropy change as response to the gating voltage is precisely detected by in situ electron spin resonance measurements. A reversible change of magnetic anisotropy up to 219 Oe is achieved with a low gating voltage of 1.5 V at room temperature, corresponding to a record high VCMA coefficient of ≈146 Oe V -1 . Two gating effects, the electrostatic doping and electrochemical reaction, are distinguished at various gating voltage regions, as confirmed by X-ray photoelectron spectroscopy and atomic force microscopy experiments. This work shows a unique ionic-liquid-gating system for strong interfacial magnetoelectric coupling with many practical advantages, paving the way toward ion-liquid-gating spintronic/electronic devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Generic two-qubit photonic gates implemented by number-resolving photodetection

International Nuclear Information System (INIS)

Uskov, Dmitry B.; Smith, A. Matthew; Kaplan, Lev

2010-01-01

We combine numerical optimization techniques [Uskov et al., Phys. Rev. A 79, 042326 (2009)] with symmetries of the Weyl chamber to obtain optimal implementations of generic linear-optical Knill-Laflamme-Milburn-type two-qubit entangling gates. We find that while any two-qubit controlled-U gate, including controlled-NOT (CNOT) and controlled-sign gates, can be implemented using only two ancilla resources with a success probability S>0.05, a generic SU(4) operation requires three unentangled ancilla photons, with success S>0.0063. Specifically, we obtain a maximal success probability close to 0.0072 for the B gate. We show that single-shot implementation of a generic SU(4) gate offers more than an order of magnitude increase in the success probability and a two-fold reduction in overhead ancilla resources compared to standard triple-CNOT and double-B gate decompositions.

The relevance of electrostatics for scanning-gate microscopy

International Nuclear Information System (INIS)

Schnez, S; Guettinger, J; Stampfer, C; Ensslin, K; Ihn, T

2011-01-01

Scanning-probe techniques have been developed to extract local information from a given physical system. In particular, conductance maps obtained by means of scanning-gate microscopy (SGM), where a conducting tip of an atomic-force microscope is used as a local and movable gate, seem to present an intuitive picture of the underlying physical processes. Here, we argue that the interpretation of such images is complex and not very intuitive under certain circumstances: scanning a graphene quantum dot (QD) in the Coulomb-blockaded regime, we observe an apparent shift of features in scanning-gate images as a function of gate voltages, which cannot be a real shift of the physical system. Furthermore, we demonstrate the appearance of more than one set of Coulomb rings arising from the graphene QD. We attribute these effects to screening between the metallic tip and the gates. Our results are relevant for SGM on any kind of nanostructure, but are of particular importance for nanostructures that are not covered with a dielectric, e.g. graphene or carbon nanotube structures.

Trapped-ion quantum logic gates based on oscillating magnetic fields.

Science.gov (United States)

Ospelkaus, C; Langer, C E; Amini, J M; Brown, K R; Leibfried, D; Wineland, D J

2008-08-29

Oscillating magnetic fields and field gradients can be used to implement single-qubit rotations and entangling multiqubit quantum gates for trapped-ion quantum information processing (QIP). With fields generated by currents in microfabricated surface-electrode traps, it should be possible to achieve gate speeds that are comparable to those of optically induced gates for realistic distances between the ion crystal and the electrode surface. Magnetic-field-mediated gates have the potential to significantly reduce the overhead in laser-beam control and motional-state initialization compared to current QIP experiments with trapped ions and will eliminate spontaneous scattering, a fundamental source of decoherence in laser-mediated gates.

Noise Gating Solar Images

Science.gov (United States)

DeForest, Craig; Seaton, Daniel B.; Darnell, John A.

2017-08-01

I present and demonstrate a new, general purpose post-processing technique, "3D noise gating", that can reduce image noise by an order of magnitude or more without effective loss of spatial or temporal resolution in typical solar applications.Nearly all scientific images are, ultimately, limited by noise. Noise can be direct Poisson "shot noise" from photon counting effects, or introduced by other means such as detector read noise. Noise is typically represented as a random variable (perhaps with location- or image-dependent characteristics) that is sampled once per pixel or once per resolution element of an image sequence. Noise limits many aspects of image analysis, including photometry, spatiotemporal resolution, feature identification, morphology extraction, and background modeling and separation.Identifying and separating noise from image signal is difficult. The common practice of blurring in space and/or time works because most image "signal" is concentrated in the low Fourier components of an image, while noise is evenly distributed. Blurring in space and/or time attenuates the high spatial and temporal frequencies, reducing noise at the expense of also attenuating image detail. Noise-gating exploits the same property -- "coherence" -- that we use to identify features in images, to separate image features from noise.Processing image sequences through 3-D noise gating results in spectacular (more than 10x) improvements in signal-to-noise ratio, while not blurring bright, resolved features in either space or time. This improves most types of image analysis, including feature identification, time sequence extraction, absolute and relative photometry (including differential emission measure analysis), feature tracking, computer vision, correlation tracking, background modeling, cross-scale analysis, visual display/presentation, and image compression.I will introduce noise gating, describe the method, and show examples from several instruments (including SDO

Deterministic nonlinear phase gates induced by a single qubit

Science.gov (United States)

Park, Kimin; Marek, Petr; Filip, Radim

2018-05-01

We propose deterministic realizations of nonlinear phase gates by repeating a finite sequence of non-commuting Rabi interactions between a harmonic oscillator and only a single two-level ancillary qubit. We show explicitly that the key nonclassical features of the ideal cubic phase gate and the quartic phase gate are generated in the harmonic oscillator faithfully by our method. We numerically analyzed the performance of our scheme under realistic imperfections of the oscillator and the two-level system. The methodology is extended further to higher-order nonlinear phase gates. This theoretical proposal completes the set of operations required for continuous-variable quantum computation.

Entangling capabilities of symmetric two-qubit gates

Indian Academy of Sciences (India)

Com- putational investigation of entanglement of such ensembles is therefore impractical for ... the computational complexity. Pairs of spin-1 ... tensor operators which can also provide different symmetric logic gates for quantum pro- ... that five of the eight, two-qubit symmetric quantum gates expressed in terms of our newly.

Introduction of audio gating to further reduce organ motion in breathing synchronized radiotherapy

International Nuclear Information System (INIS)

Kubo, H. Dale; Wang Lili

2002-01-01

With breathing synchronized radiotherapy (BSRT), a voltage signal derived from an organ displacement detector is usually displayed on the vertical axis whereas the elapsed time is shown on the horizontal axis. The voltage gate window is set on the breathing voltage signal. Whenever the breathing signal falls between the two gate levels, a gate pulse is produced to enable the treatment machine. In this paper a new gating mechanism, audio (or time-sequence) gating, is introduced and is integrated into the existing voltage gating system. The audio gating takes advantage of the repetitive nature of the breathing signal when repetitive audio instruction is given to the patient. The audio gating is aimed at removing the regions of sharp rises and falls in the breathing signal that cannot be removed by the voltage gating. When the breathing signal falls between voltage gate levels as well as between audio-gate levels, the voltage- and audio-gated radiotherapy (ART) system will generate an AND gate pulse. When this gate pulse is received by a linear accelerator, the linear accelerator becomes 'enabled' for beam delivery and will deliver the beam when all other interlocks are removed. This paper describes a new gating mechanism and a method of recording beam-on signal, both of which are, configured into a laptop computer. The paper also presents evidence of some clinical advantages achieved with the ART system

An analytical gate tunneling current model for MOSFETs

Energy Technology Data Exchange (ETDEWEB)

Kazerouni, Iman Abaspur, E-mail: imanabaspur@gmail.com; Hosseini, Seyed Ebrahim [Sabzevar Tarbiat Moallem University, Electrical and Computer Department (Iran, Islamic Republic of)

2012-03-15

Gate tunneling current of MOSFETs is an important factor in modeling ultra small devices. In this paper, gate tunneling in present-generation MOSFETs is studied. In the proposed model, we calculate the electron wave function at the semiconductor-oxide interface and inversion charge by treating the inversion layer as a potential well, including some simplifying assumptions. Then we compute the gate tunneling current using the calculated wave function. The proposed model results have an excellent agreement with experimental results in the literature.

Fast quantum logic gates with trapped-ion qubits

Science.gov (United States)

Schäfer, V. M.; Ballance, C. J.; Thirumalai, K.; Stephenson, L. J.; Ballance, T. G.; Steane, A. M.; Lucas, D. M.

2018-03-01

Quantum bits (qubits) based on individual trapped atomic ions are a promising technology for building a quantum computer. The elementary operations necessary to do so have been achieved with the required precision for some error-correction schemes. However, the essential two-qubit logic gate that is used to generate quantum entanglement has hitherto always been performed in an adiabatic regime (in which the gate is slow compared with the characteristic motional frequencies of the ions in the trap), resulting in logic speeds of the order of 10 kilohertz. There have been numerous proposals of methods for performing gates faster than this natural ‘speed limit’ of the trap. Here we implement one such method, which uses amplitude-shaped laser pulses to drive the motion of the ions along trajectories designed so that the gate operation is insensitive to the optical phase of the pulses. This enables fast (megahertz-rate) quantum logic that is robust to fluctuations in the optical phase, which would otherwise be an important source of experimental error. We demonstrate entanglement generation for gate times as short as 480 nanoseconds—less than a single oscillation period of an ion in the trap and eight orders of magnitude shorter than the memory coherence time measured in similar calcium-43 hyperfine qubits. The power of the method is most evident at intermediate timescales, at which it yields a gate error more than ten times lower than can be attained using conventional techniques; for example, we achieve a 1.6-microsecond-duration gate with a fidelity of 99.8 per cent. Faster and higher-fidelity gates are possible at the cost of greater laser intensity. The method requires only a single amplitude-shaped pulse and one pair of beams derived from a continuous-wave laser. It offers the prospect of combining the unrivalled coherence properties, operation fidelities and optical connectivity of trapped-ion qubits with the submicrosecond logic speeds that are usually

Local gate control in carbon nanotube quantum devices

Science.gov (United States)

Biercuk, Michael Jordan

This thesis presents transport measurements of carbon nanotube electronic devices operated in the quantum regime. Nanotubes are contacted by source and drain electrodes, and multiple lithographically-patterned electrostatic gates are aligned to each device. Transport measurements of device conductance or current as a function of local gate voltages reveal that local gates couple primarily to the proximal section of the nanotube, hence providing spatially localized control over carrier density along the nanotube length. Further, using several different techniques we are able to produce local depletion regions along the length of a tube. This phenomenon is explored in detail for different contact metals to the nanotube. We utilize local gating techniques to study multiple quantum dots in carbon nanotubes produced both by naturally occurring defects, and by the controlled application of voltages to depletion gates. We study double quantum dots in detail, where transport measurements reveal honeycomb charge stability diagrams. We extract values of energy-level spacings, capacitances, and interaction energies for this system, and demonstrate independent control over all relevant tunneling rates. We report rf-reflectometry measurements of gate-defined carbon nanotube quantum dots with integrated charge sensors. Aluminum rf-SETs are electrostatically coupled to carbon nanotube devices and detect single electron charging phenomena in the Coulomb blockade regime. Simultaneous correlated measurements of single electron charging are made using reflected rf power from the nanotube itself and from the rf-SET on microsecond time scales. We map charge stability diagrams for the nanotube quantum dot via charge sensing, observing Coulomb charging diamonds beyond the first order. Conductance measurements of carbon nanotubes containing gated local depletion regions exhibit plateaus as a function of gate voltage, spaced by approximately 1e2/h, the quantum of conductance for a single

C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

International Nuclear Information System (INIS)

Onojima, Norio; Kasamatsu, Akihumi; Hirose, Nobumitsu; Mimura, Takashi; Matsui, Toshiaki

2008-01-01

Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g m ) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f T compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel

C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

Energy Technology Data Exchange (ETDEWEB)

Onojima, Norio [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan)], E-mail: nonojima@nict.go.jp; Kasamatsu, Akihumi; Hirose, Nobumitsu [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan); Mimura, Takashi [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan); Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197 (Japan); Matsui, Toshiaki [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan)

2008-07-30

Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g{sub m}) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f{sub T} compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel.

Optimizing the Gating System for Steel Castings

Directory of Open Access Journals (Sweden)

Jan Jezierski

2018-04-01

Full Text Available The article presents the attempt to optimize a gating system to produce cast steel castings. It is based on John Campbell’s theory and presents the original results of computer modelling of typical and optimized gating systems for cast steel castings. The current state-of-the-art in cast steel casting foundry was compared with several proposals of optimization. The aim was to find a compromise between the best, theoretically proven gating system version, and a version that would be affordable in industrial conditions. The results show that it is possible to achieve a uniform and slow pouring process even for heavy castings to preserve their internal quality.

Controlled phase gate for solid-state charge-qubit architectures

International Nuclear Information System (INIS)

Schirmer, S.G.; Oi, D.K.L.; Greentree, Andrew D.

2005-01-01

We describe a mechanism for realizing a controlled phase gate for solid-state charge qubits. By augmenting the positionally defined qubit with an auxiliary state, and changing the charge distribution in the three-dot system, we are able to effectively switch the Coulombic interaction, effecting an entangling gate. We consider two architectures, and numerically investigate their robustness to gate noise

Side-gate modulation effects on high-quality BN-Graphene-BN nanoribbon capacitors

International Nuclear Information System (INIS)

Wang, Yang; Chen, Xiaolong; Ye, Weiguang; Wu, Zefei; Han, Yu; Han, Tianyi; He, Yuheng; Cai, Yuan; Wang, Ning

2014-01-01

High-quality BN-Graphene-BN nanoribbon capacitors with double side-gates of graphene have been experimentally realized. The double side-gates can effectively modulate the electronic properties of graphene nanoribbon capacitors. By applying anti-symmetric side-gate voltages, we observed significant upward shifting and flattening of the V-shaped capacitance curve near the charge neutrality point. Symmetric side-gate voltages, however, only resulted in tilted upward shifting along the opposite direction of applied gate voltages. These modulation effects followed the behavior of graphene nanoribbons predicted theoretically for metallic side-gate modulation. The negative quantum capacitance phenomenon predicted by numerical simulations for graphene nanoribbons modulated by graphene side-gates was not observed, possibly due to the weakened interactions between the graphene nanoribbon and side-gate electrodes caused by the Ga + beam etching process

Gates Auto Door Car With Lights Modulated

OpenAIRE

Lina Carolina; Luyung Dinani, Skom, MMSi

2002-01-01

In scientific writing wi ll be explained about automatic gates with modulated headlights, where to find the car lights were adjusted by the relative frequency darker because of this background that the author alleviate human task in performing daily activities by using an automatic gate with the car lights modulated.

Deutsch, Toffoli, and cnot Gates via Rydberg Blockade of Neutral Atoms

Science.gov (United States)

Shi, Xiao-Feng

2018-05-01

Universal quantum gates and quantum error correction (QEC) lie at the heart of quantum-information science. Large-scale quantum computing depends on a universal set of quantum gates, in which some gates may be easily carried out, while others are restricted to certain physical systems. There is a unique three-qubit quantum gate called the Deutsch gate [D (θ )], from which a circuit can be constructed so that any feasible quantum computing is attainable. We design an easily realizable D (θ ) by using the Rydberg blockade of neutral atoms, where θ can be tuned to any value in [0 ,π ] by adjusting the strengths of external control fields. Using similar protocols, we further show that both the Toffoli and controlled-not gates can be achieved with only three laser pulses. The Toffoli gate, being universal for classical reversible computing, is also useful for QEC, which plays an important role in quantum communication and fault-tolerant quantum computation. The possibility and speed of realizing these gates shed light on the study of quantum information with neutral atoms.

The pollution of the 'iron gate' reservoir

International Nuclear Information System (INIS)

Babic-Mladenovic, M.; Varga, S; Popovic, L.; Damjanovic, M.

2002-01-01

The paper presents the characteristics of the Iron Gate I (the Djerdap) Water Power and Navigational System, one of the largest in Europe (completed in 1972 by joint efforts of Yugoslavia and Romania). In this paper the attention is devoted to review of the sediment monitoring program and impacts of reservoir sedimentation, as well as to the investigations of water and sediment quality. Special consideration is paid to the issue of sediment pollution research needs. Namely, the hot spot of the 'Iron Gate' sedimentation represents a scarcely known pollution of sediment deposits. The present pollution probably is considerable, since the 'Iron Gate' reservoir drains about 577000 km 2 , with over 80 million inhabitants, and developed municipal and industrial infrastructure. Therefore, in the thirty-year reservoir life various types of sediment-bound pollutants entered and deposited within it. Especially severe incidents happened during 1999 (as a result of NATO bombing campaign) and 2000 (two accidental pollutions in the Tisza river catchment). The study of the 'Iron Gate' reservoir pollution should be prepared in order to enlighten the present state of reservoir sedimentation and pollution. The main objectives of the study are to enhance the government and public awareness of the present environmental state of the 'Iron Gate' reservoir and to serve as a baseline for all future actions. (author)

Respiratory gated lung CT using 320-row area detector CT

International Nuclear Information System (INIS)

Sakamoto, Ryo; Noma, Satoshi; Higashino, Takanori

2010-01-01

Three hundred and twenty-row Area Detector CT (ADCT) has made it possible to scan whole lung field with prospective respiratory gated wide volume scan. We evaluated whether the respiratory gated wide volume scan enables to reduce motion induced artifacts in the lung area. Helical scan and respiratory gated wide volume scan were performed in 5 patients and 10 healthy volunteers under spontaneous breathing. Significant reduction of motion artifact and superior image quality were obtained in respiratory gated scan in comparison with helical scan. Respiratory gated wide volume scan is an unique method using ADCT, and is able to reduce motion artifacts in lung CT scans of patients unable to suspend respiration in clinical scenes. (author)

Dosimetric Analysis of Respiratory-Gated Radiotherapy for Hepatocellular Carcinoma

International Nuclear Information System (INIS)

Xi Mian; Zhang Li; Liu Mengzhong; Deng Xiaowu; Huang Xiaoyan; Liu Hui

2011-01-01

The purpose of this study was to define individualized internal target volume (ITV) for hepatocellular carcinoma (HCC) using 4D computed tomography (4DCT), and to determine the geometric and dosimetric benefits of respiratory gating. Gross tumor volumes (GTVs) were contoured on 10 respiratory phases of 4DCT images for 12 patients with HCC. Three treatment plans were prepared using different planning target volumes (PTVs): (1) PTV 3D , derived from a single helical clinical target volume (CTV) plus conventional margins; (2) PTV 10phases , derived from ITV 10phases , which encompassed all 10 CTVs plus an isotropic margin of 0.8 cm; (3) PTV gating , derived from ITV gating , which encompassed three CTVs within gating-window at end-expiration plus an isotropic margin of 0.8 cm. The PTV 3D was the largest volume for all patients. The ITV-based plans and gating plans spared more normal tissues than 3D plans, especially the liver. Without increasing normal tissue complication probability of the 3D plans, the ITV-based plans allowed for increasing the calculated dose from 50.8 Gy to 54.7 Gy on average, and the gating plans could further escalate the dose to 58.5 Gy. Compared with ITV-based plans, the dosimetric gains with gating plan strongly correlated with GTV mobility in the craniocaudal direction. The ITV-based plans can ensure target coverage with less irradiation of normal tissues compared with 3D plans. Respiratory-gated radiotherapy can further reduce the target volumes to spare more surrounding tissues and allow dose escalation, especially for patients with tumor mobility >1 cm.

Optimizing link efficiency for gated DPCCH transmission on HSUPA

DEFF Research Database (Denmark)

Zarco, Carlos Ruben Delgado; Wigard, Jeroen; Kolding, T. E.

2007-01-01

consider the E-DCH performance degradation caused by gating on other radio procedures relying on the DPCCH, such as inner and outer loop power control. Our studies show that gating is beneficial for both for 2 and 10 ms transmission time intervals. The gains in terms of LE with a Vehicular A 30 kmph......To minimize the terminal's transmission power in bursty uplink traffic conditions, the evolved High-Speed Uplink Packet Access (HSUPA) concept in 3GPP WCDMA includes a feature known as Dedicated Physical Control Channel (DPCCH) gating. We present here a detailed link level study of gating from...... a link efficiency (LE) perspective; LE being expressed in bits per second per Watt. While the overall gain mechanisms of gating are well known, we show how special challenges related to discontinuous Enhanced Dedicated Channel (E-DCH) transmission can be addressed for high link and system performance. We...

Single-atom gating and magnetic interactions in quantum corrals

Energy Technology Data Exchange (ETDEWEB)

Ngo, Anh T.; Kim, Eugene H.; Ulloa, Sergio E.

2017-04-01

Single-atom gating, achieved by manipulation of adatoms on a surface, has been shown in experiments to allow precise control over superposition of electronic states in quantum corrals. Using a Green's function approach, we demonstrate theoretically that such atom gating can also be used to control the coupling between magnetic degrees of freedom in these systems. Atomic gating enables control not only on the direct interaction between magnetic adatoms, but also over superpositions of many-body states which can then control long distance interactions. We illustrate this effect by considering the competition between direct exchange between magnetic impurities and the Kondo screening mediated by the host electrons, and how this is affected by gating. These results suggest that both magnetic and nonmagnetic single-atom gating may be used to investigate magnetic impurity systems with tailored interactions, and may allow the control of entanglement of different spin states.

Efficiency of respiratory-gated delivery of synchrotron-based pulsed proton irradiation

International Nuclear Information System (INIS)

Tsunashima, Yoshikazu; Vedam, Sastry; Dong, Lei; Bues, Martin; Balter, Peter; Smith, Alfred; Mohan, Radhe; Umezawa, Masumi; Sakae, Takeji

2008-01-01

Significant differences exist in respiratory-gated proton beam delivery with a synchrotron-based accelerator system when compared to photon therapy with a conventional linear accelerator. Delivery of protons with a synchrotron accelerator is governed by a magnet excitation cycle pattern. Optimal synchronization of the magnet excitation cycle pattern with the respiratory motion pattern is critical to the efficiency of respiratory-gated proton delivery. There has been little systematic analysis to optimize the accelerator's operational parameters to improve gated treatment efficiency. The goal of this study was to estimate the overall efficiency of respiratory-gated synchrotron-based proton irradiation through realistic simulation. Using 62 respiratory motion traces from 38 patients, we simulated respiratory gating for duty cycles of 30%, 20% and 10% around peak exhalation for various fixed and variable magnet excitation patterns. In each case, the time required to deliver 100 monitor units in both non-gated and gated irradiation scenarios was determined. Based on results from this study, the minimum time required to deliver 100 MU was 1.1 min for non-gated irradiation. For respiratory-gated delivery at a 30% duty cycle around peak exhalation, corresponding average delivery times were typically three times longer with a fixed magnet excitation cycle pattern. However, when a variable excitation cycle was allowed in synchrony with the patient's respiratory cycle, the treatment time only doubled. Thus, respiratory-gated delivery of synchrotron-based pulsed proton irradiation is feasible and more efficient when a variable magnet excitation cycle pattern is used

ZnO nanowire-based nano-floating gate memory with Pt nanocrystals embedded in Al{sub 2}O{sub 3} gate oxides

Energy Technology Data Exchange (ETDEWEB)

Yeom, Donghyuk; Kang, Jeongmin; Lee, Myoungwon; Jang, Jaewon; Yun, Junggwon; Jeong, Dong-Young; Yoon, Changjoon; Koo, Jamin; Kim, Sangsig [Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701 (Korea, Republic of)], E-mail: sangsig@korea.ac.kr

2008-10-01

The memory characteristics of ZnO nanowire-based nano-floating gate memory (NFGM) with Pt nanocrystals acting as the floating gate nodes were investigated in this work. Pt nanocrystals were embedded between Al{sub 2}O{sub 3} tunneling and control oxide layers deposited on ZnO nanowire channels. For a representative ZnO nanowire-based NFGM with embedded Pt nanocrystals, a threshold voltage shift of 3.8 V was observed in its drain current versus gate voltage (I{sub DS}-V{sub GS}) measurements for a double sweep of the gate voltage, revealing that the deep effective potential wells built into the nanocrystals provide our NFGM with a large charge storage capacity. Details of the charge storage effect observed in this memory device are discussed in this paper.

Disrupted sensory gating in pathological gambling.

Science.gov (United States)

Stojanov, Wendy; Karayanidis, Frini; Johnston, Patrick; Bailey, Andrew; Carr, Vaughan; Schall, Ulrich

2003-08-15

Some neurochemical evidence as well as recent studies on molecular genetics suggest that pathologic gambling may be related to dysregulated dopamine neurotransmission. The current study examined sensory (motor) gating in pathologic gamblers as a putative measure of endogenous brain dopamine activity with prepulse inhibition of the acoustic startle eye-blink response and the auditory P300 event-related potential. Seventeen pathologic gamblers and 21 age- and gender-matched healthy control subjects were assessed. Both prepulse inhibition measures were recorded under passive listening and two-tone prepulse discrimination conditions. Compared to the control group, pathologic gamblers exhibited disrupted sensory (motor) gating on all measures of prepulse inhibition. Sensory motor gating deficits of eye-blink responses were most profound at 120-millisecond prepulse lead intervals in the passive listening task and at 240-millisecond prepulse lead intervals in the two-tone prepulse discrimination task. Sensory gating of P300 was also impaired in pathologic gamblers, particularly at 500-millisecond lead intervals, when performing the discrimination task on the prepulse. In the context of preclinical studies on the disruptive effects of dopamine agonists on prepulse inhibition, our findings suggest increased endogenous brain dopamine activity in pathologic gambling in line with previous neurobiological findings.

Acquisition and automated 3-D segmentation of respiratory/cardiac-gated PET transmission images

International Nuclear Information System (INIS)

Reutter, B.W.; Klein, G.J.; Brennan, K.M.; Huesman, R.H.

1996-01-01

To evaluate the impact of respiratory motion on attenuation correction of cardiac PET data, we acquired and automatically segmented gated transmission data for a dog breathing on its own under gas anesthesia. Data were acquired for 20 min on a CTI/Siemens ECAT EXACT HR (47-slice) scanner configured for 12 gates in a static study, Two respiratory gates were obtained using data from a pneumatic bellows placed around the dog's chest, in conjunction with 6 cardiac gates from standard EKG gating. Both signals were directed to a LabVIEW-controlled Macintosh, which translated them into one of 12 gate addresses. The respiratory gating threshold was placed near end-expiration to acquire 6 cardiac-gated datasets at end-expiration and 6 cardiac-gated datasets during breaths. Breaths occurred about once every 10 sec and lasted about 1-1.5 sec. For each respiratory gate, data were summed over cardiac gates and torso and lung surfaces were segmented automatically using a differential 3-D edge detection algorithm. Three-dimensional visualizations showed that lung surfaces adjacent to the heart translated 9 mm inferiorly during breaths. Our results suggest that respiration-compensated attenuation correction is feasible with a modest amount of gated transmission data and is necessary for accurate quantitation of high-resolution gated cardiac PET data

Nearly deterministic quantum Fredkin gate based on weak cross-Kerr nonlinearity

Science.gov (United States)

Wu, Yun-xiang; Zhu, Chang-hua; Pei, Chang-xing

2016-09-01

A scheme of an optical quantum Fredkin gate is presented based on weak cross-Kerr nonlinearity. By an auxiliary coherent state with the cross-Kerr nonlinearity effect, photons can interact with each other indirectly, and a non-demolition measurement for photons can be implemented. Combined with the homodyne detection, classical feedforward, polarization beam splitters and Pauli-X operations, a controlled-path gate is constructed. Furthermore, a quantum Fredkin gate is built based on the controlled-path gate. The proposed Fredkin gate is simple in structure and feasible by current experimental technology.

Three-channel gated nanosecond integrator

International Nuclear Information System (INIS)

Tsirkel', B.I.; Martsinovskij, A.M.

1981-01-01

Structure and principle of operation of three-channel gated integrator for investigating the shape of periodical electric and optical signals at high background noise level are described. The integrator consists of an integrating circuit itself for each channel and a circuit of gating pulse formation. If the noise level doesn't exceed the signal, the value of storage capacity can be equal to 22 nF. The value of storage capacity must be increased in the case of a worse signal-to-noise ratio. The gating pulse formation circuit includes a comparator, a sawtooth voltage generator and a reference voltage generator. An integrator flowsheet is given. The time resolution of the system is about 50 ns, time sweep amounts to 5-2000 μs, electric signal sensitivity is about 70 μV. The pulse signal shape recording is performed with manual or automated time sweep at two-coordinate potentiometer. The light signal detection is made on the base of photomultiplier pulse counting rate record by the dynamic capacitor method, sensitivity limit amounts to about 1 pulse/s

Optimum source/drain overlap design for 16 nm high-k/metal gate MOSFETs

International Nuclear Information System (INIS)

Jang, Junyong; Lim, Towoo; Kim, Youngmin

2009-01-01

We explore a source/drain (S/D) design for a 16 nm MOSFET utilizing a replacement process for a high-k gate dielectric and metal gate electrode integration. Using TCAD simulation, a trade-off study between series resistance and overlap capacitance is carried out for a high-k dielectric surrounding gate structure, which results from the replacement process. An optimum S/D overlap to gate for the high-k surrounding gate structure is found to be different from the conventional gate structure, i.e. 0∼1 nm underlap is preferred for the surround high-k gate structure while 1∼2 nm overlap for the conventional gate one

A novel method of developing all optical frequency encoded Fredkin gates

Science.gov (United States)

Garai, Sisir Kumar

2014-02-01

All optical reversible logic gates have significant applications in the field of optics and optoelectronics for developing different sequential and combinational circuits of optical computing, optical signal processing and in multi-valued logic operations and quantum computing. Here the author proposes a method for developing all optical three-input-output Fredkin gate and modified Fredkin gate using frequency encoded data. For this purpose the author has exploited the properties of efficient frequency conversion and faster switching speed of semiconductor optical amplifiers. Simulation results of the three input-output Fredkin gate testifies to the feasibility of the proposed scheme. These Fredkin gates are universal logic gates, and can be used to develop different all-optical logic and data processors in communication network.

Decision Support Model for Optimal Management of Coastal Gate

Science.gov (United States)

Ditthakit, Pakorn; Chittaladakorn, Suwatana

2010-05-01

The coastal areas are intensely settled by human beings owing to their fertility of natural resources. However, at present those areas are facing with water scarcity problems: inadequate water and poor water quality as a result of saltwater intrusion and inappropriate land-use management. To solve these problems, several measures have been exploited. The coastal gate construction is a structural measure widely performed in several countries. This manner requires the plan for suitably operating coastal gates. Coastal gate operation is a complicated task and usually concerns with the management of multiple purposes, which are generally conflicted one another. This paper delineates the methodology and used theories for developing decision support modeling for coastal gate operation scheduling. The developed model was based on coupling simulation and optimization model. The weighting optimization technique based on Differential Evolution (DE) was selected herein for solving multiple objective problems. The hydrodynamic and water quality models were repeatedly invoked during searching the optimal gate operations. In addition, two forecasting models:- Auto Regressive model (AR model) and Harmonic Analysis model (HA model) were applied for forecasting water levels and tide levels, respectively. To demonstrate the applicability of the developed model, it was applied to plan the operations for hypothetical system of Pak Phanang coastal gate system, located in Nakhon Si Thammarat province, southern part of Thailand. It was found that the proposed model could satisfyingly assist decision-makers for operating coastal gates under various environmental, ecological and hydraulic conditions.

Gate modulation of proton transport in a nanopore.

Science.gov (United States)

Mei, Lanju; Yeh, Li-Hsien; Qian, Shizhi

2016-03-14

Proton transport in confined spaces plays a crucial role in many biological processes as well as in modern technological applications, such as fuel cells. To achieve active control of proton conductance, we investigate for the first time the gate modulation of proton transport in a pH-regulated nanopore by a multi-ion model. The model takes into account surface protonation/deprotonation reactions, surface curvature, electroosmotic flow, Stern layer, and electric double layer overlap. The proposed model is validated by good agreement with the existing experimental data on nanopore conductance with and without a gate voltage. The results show that the modulation of proton transport in a nanopore depends on the concentration of the background salt and solution pH. Without background salt, the gated nanopore exhibits an interesting ambipolar conductance behavior when pH is close to the isoelectric point of the dielectric pore material, and the net ionic and proton conductance can be actively regulated with a gate voltage as low as 1 V. The higher the background salt concentration, the lower is the performance of the gate control on the proton transport.

Laser-assisted electron emission from gated field-emitters

CERN Document Server

Ishizuka, H; Yokoo, K; Mimura, H; Shimawaki, H; Hosono, A

2002-01-01

Enhancement of electron emission by illumination of gated field-emitters was studied using a 100 mW cw YAG laser at a wavelength of 532 nm, intensities up to 10 sup 7 W/m sup 2 and mechanically chopped with a rise time of 4 mu s. When shining an array of 640 silicon emitters, the emission current responded quickly to on-off of the laser. The increase of the emission current was proportional to the basic emission current at low gate voltages, but it was saturated at approx 3 mu A as the basic current approached 100 mu A with the increase of gate voltage. The emission increase was proportional to the square root of laser power at low gate voltages and to the laser power at elevated gate voltages. For 1- and 3-tip silicon emitters, the rise and fall of the current due to on-off of the laser showed a significant time lag. The magnitude of emission increase was independent of the position of laser spot on the emitter base and reached 2 mu A at a basic current of 5 mu A without showing signs of saturation. The mech...

Hybrid ECG-gated versus non-gated 512-slice CT angiography of the aorta and coronary artery: image quality and effect of a motion correction algorithm.

Science.gov (United States)

Lee, Ji Won; Kim, Chang Won; Lee, Geewon; Lee, Han Cheol; Kim, Sang-Pil; Choi, Bum Sung; Jeong, Yeon Joo

2018-02-01

Background Using the hybrid electrocardiogram (ECG)-gated computed tomography (CT) technique, assessment of entire aorta, coronary arteries, and aortic valve can be possible using single-bolus contrast administration within a single acquisition. Purpose To compare the image quality of hybrid ECG-gated and non-gated CT angiography of the aorta and evaluate the effect of a motion correction algorithm (MCA) on coronary artery image quality in a hybrid ECG-gated aorta CT group. Material and Methods In total, 104 patients (76 men; mean age = 65.8 years) prospectively randomized into two groups (Group 1 = hybrid ECG-gated CT; Group 2 = non-gated CT) underwent wide-detector array aorta CT. Image quality, assessed using a four-point scale, was compared between the groups. Coronary artery image quality was compared between the conventional reconstruction and motion correction reconstruction subgroups in Group 1. Results Group 1 showed significant advantages over Group 2 in aortic wall, cardiac chamber, aortic valve, coronary ostia, and main coronary arteries image quality (all P ECG-gated CT significantly improved the heart and aortic wall image quality and the MCA can further improve the image quality and interpretability of coronary arteries.

Gate-Driven Pure Spin Current in Graphene

Science.gov (United States)

Lin, Xiaoyang; Su, Li; Si, Zhizhong; Zhang, Youguang; Bournel, Arnaud; Zhang, Yue; Klein, Jacques-Olivier; Fert, Albert; Zhao, Weisheng

2017-09-01

The manipulation of spin current is a promising solution for low-power devices beyond CMOS. However, conventional methods, such as spin-transfer torque or spin-orbit torque for magnetic tunnel junctions, suffer from large power consumption due to frequent spin-charge conversions. An important challenge is, thus, to realize long-distance transport of pure spin current, together with efficient manipulation. Here, the mechanism of gate-driven pure spin current in graphene is presented. Such a mechanism relies on the electrical gating of carrier-density-dependent conductivity and spin-diffusion length in graphene. The gate-driven feature is adopted to realize the pure spin-current demultiplexing operation, which enables gate-controllable distribution of the pure spin current into graphene branches. Compared with the Elliott-Yafet spin-relaxation mechanism, the D'yakonov-Perel spin-relaxation mechanism results in more appreciable demultiplexing performance. The feature of the pure spin-current demultiplexing operation will allow a number of logic functions to be cascaded without spin-charge conversions and open a route for future ultra-low-power devices.

Design and Optimization of 22 nm Gate Length High-k/Metal gate NMOS Transistor

International Nuclear Information System (INIS)

Afifah Maheran A H; Menon P S; Shaari, S; Elgomati, H A; Salehuddin, F; Ahmad, I

2013-01-01

In this paper, we invented the optimization experiment design of a 22 nm gate length NMOS device which uses a combination of high-k material and metal as the gate which was numerically developed using an industrial-based simulator. The high-k material is Titanium dioxide (TiO 2 ), while the metal gate is Tungsten Silicide (WSi x ). The design is optimized using the L9 Taguchi method to get the optimum parameter design. There are four process parameters and two noise parameters which were varied for analyzing the effect on the threshold voltage (V th ). The objective of this experiment is to minimize the variance of V th where Taguchi's nominal-the-best signal-to-noise ratio (S/N Ratio) was used. The best settings of the process parameters were determined using Analysis of Mean (ANOM) and analysis of variance (ANOVA) to reduce the variability of V th . The results show that the V th values have least variance and the mean value can be adjusted to 0.306V ±0.027 for the NMOS device which is in line with projections by the ITRS specifications.

Chemical vapor deposited monolayer MoS2 top-gate MOSFET with atomic-layer-deposited ZrO2 as gate dielectric

Science.gov (United States)

Hu, Yaoqiao; Jiang, Huaxing; Lau, Kei May; Li, Qiang

2018-04-01

For the first time, ZrO2 dielectric deposition on pristine monolayer MoS2 by atomic layer deposition (ALD) is demonstrated and ZrO2/MoS2 top-gate MOSFETs have been fabricated. ALD ZrO2 overcoat, like other high-k oxides such as HfO2 and Al2O3, was shown to enhance the MoS2 channel mobility. As a result, an on/off current ratio of over 107, a subthreshold slope of 276 mV dec-1, and a field-effect electron mobility of 12.1 cm2 V-1 s-1 have been achieved. The maximum drain current of the MOSFET with a top-gate length of 4 μm and a source/drain spacing of 9 μm is measured to be 1.4 μA μm-1 at V DS = 5 V. The gate leakage current is below 10-2 A cm-2 under a gate bias of 10 V. A high dielectric breakdown field of 4.9 MV cm-1 is obtained. Gate hysteresis and frequency-dependent capacitance-voltage measurements were also performed to characterize the ZrO2/MoS2 interface quality, which yielded an interface state density of ˜3 × 1012 cm-2 eV-1.

Multi-material gate poly-crystalline thin film transistors: Modeling and simulation for an improved gate transport efficiency

International Nuclear Information System (INIS)

Sehgal, Amit; Mangla, Tina; Gupta, Mridula; Gupta, R.S.

2008-01-01

In this work, a two-dimensional potential distribution formulation is presented for multi-material gate poly-crystalline silicon thin film transistors. The developed formulation incorporates the effects due to traps and grain-boundaries. In short-channel devices, short-channel effects and drain-induced barrier lowering (DIBL) effect exists, and are accounted for in the analysis. The work aims at the reduction of DIBL effect and grain-boundary effects i.e. to reduce the potential barriers generated in the channel by employing gate-engineered structures. A study of work-functions and electrode lengths of multi-material gate electrode is done to suppress the potential barriers, hot electron effect and to improve the carrier transport efficiency. Green's function approach is adopted for the two-dimensional potential solution. The results obtained show a good agreement with simulated results, thus, demonstrating the validity of our model

Coherent molecular transistor: control through variation of the gate wave function.

Science.gov (United States)

Ernzerhof, Matthias

2014-03-21

In quantum interference transistors (QUITs), the current through the device is controlled by variation of the gate component of the wave function that interferes with the wave function component joining the source and the sink. Initially, mesoscopic QUITs have been studied and more recently, QUITs at the molecular scale have been proposed and implemented. Typically, in these devices the gate lead is subjected to externally adjustable physical parameters that permit interference control through modifications of the gate wave function. Here, we present an alternative model of a molecular QUIT in which the gate wave function is directly considered as a variable and the transistor operation is discussed in terms of this variable. This implies that we specify the gate current as well as the phase of the gate wave function component and calculate the resulting current through the source-sink channel. Thus, we extend on prior works that focus on the phase of the gate wave function component as a control parameter while having zero or certain discrete values of the current. We address a large class of systems, including finite graphene flakes, and obtain analytic solutions for how the gate wave function controls the transistor.

Coherent molecular transistor: Control through variation of the gate wave function

International Nuclear Information System (INIS)

Ernzerhof, Matthias

2014-01-01

In quantum interference transistors (QUITs), the current through the device is controlled by variation of the gate component of the wave function that interferes with the wave function component joining the source and the sink. Initially, mesoscopic QUITs have been studied and more recently, QUITs at the molecular scale have been proposed and implemented. Typically, in these devices the gate lead is subjected to externally adjustable physical parameters that permit interference control through modifications of the gate wave function. Here, we present an alternative model of a molecular QUIT in which the gate wave function is directly considered as a variable and the transistor operation is discussed in terms of this variable. This implies that we specify the gate current as well as the phase of the gate wave function component and calculate the resulting current through the source-sink channel. Thus, we extend on prior works that focus on the phase of the gate wave function component as a control parameter while having zero or certain discrete values of the current. We address a large class of systems, including finite graphene flakes, and obtain analytic solutions for how the gate wave function controls the transistor

Robust quantum gates between trapped ions using shaped pulses

Energy Technology Data Exchange (ETDEWEB)

Zou, Ping, E-mail: zouping@m.scnu.edu.cn; Zhang, Zhi-Ming, E-mail: zmzhang@scnu.edu.cn

2015-12-18

We improve two existing entangling gate schemes between trapped ion qubits immersed in a large linear crystal. Based on the existing two-qubit gate schemes by applying segmented forces on the individually addressed qubits, we present a systematic method to optimize the shapes of the forces to suppress the dominant source of infidelity. The spin-dependent forces in the scheme can be from periodic photon kicks or from continuous optical pulses. The entangling gates are fast, robust, and have high fidelity. They can be used to implement scalable quantum computation and quantum simulation. - Highlights: • We present a systematic method to optimize the shape of the pulses to decouple qubits from intermediary motional modes. • Our optimized scheme can be applied to both the ultrafast gate and fast gate. • Our optimized scheme can suppress the dominant source of infidelity to arbitrary order. • When the number of trapped ions increase, the number of needed segments increases slowly.

High-Dimensional Single-Photon Quantum Gates: Concepts and Experiments.

Science.gov (United States)

Babazadeh, Amin; Erhard, Manuel; Wang, Feiran; Malik, Mehul; Nouroozi, Rahman; Krenn, Mario; Zeilinger, Anton

2017-11-03

Transformations on quantum states form a basic building block of every quantum information system. From photonic polarization to two-level atoms, complete sets of quantum gates for a variety of qubit systems are well known. For multilevel quantum systems beyond qubits, the situation is more challenging. The orbital angular momentum modes of photons comprise one such high-dimensional system for which generation and measurement techniques are well studied. However, arbitrary transformations for such quantum states are not known. Here we experimentally demonstrate a four-dimensional generalization of the Pauli X gate and all of its integer powers on single photons carrying orbital angular momentum. Together with the well-known Z gate, this forms the first complete set of high-dimensional quantum gates implemented experimentally. The concept of the X gate is based on independent access to quantum states with different parities and can thus be generalized to other photonic degrees of freedom and potentially also to other quantum systems.

Quantum logic gates based on ballistic transport in graphene

Energy Technology Data Exchange (ETDEWEB)

Dragoman, Daniela [Faculty of Physics, University of Bucharest, P.O. Box MG-11, 077125 Bucharest (Romania); Academy of Romanian Scientists, Splaiul Independentei 54, 050094 Bucharest (Romania); Dragoman, Mircea, E-mail: mircea.dragoman@imt.ro [National Institute for Research and Development in Microtechnology (IMT), P.O. Box 38-160, 023573 Bucharest (Romania)

2016-03-07

The paper presents various configurations for the implementation of graphene-based Hadamard, C-phase, controlled-NOT, and Toffoli gates working at room temperature. These logic gates, essential for any quantum computing algorithm, involve ballistic graphene devices for qubit generation and processing and can be fabricated using existing nanolithographical techniques. All quantum gate configurations are based on the very large mean-free-paths of carriers in graphene at room temperature.

A single high dose of escitalopram disrupts sensory gating and habituation, but not sensorimotor gating in healthy volunteers

DEFF Research Database (Denmark)

Oranje, Bob; Wienberg, Malene; Glenthøj, Birte Yding

2011-01-01

Early mechanisms to limit the input of sensory information to higher brain areas are important for a healthy individual. In previous studies, we found that a low dose of 10mg escitalopram (SSRI) disrupts habituation, without affecting sensory and sensorimotor gating in healthy volunteers. In the ......Early mechanisms to limit the input of sensory information to higher brain areas are important for a healthy individual. In previous studies, we found that a low dose of 10mg escitalopram (SSRI) disrupts habituation, without affecting sensory and sensorimotor gating in healthy volunteers....... In the current study a higher dose of 15mg was used. The hypothesis was that this higher dose of escitalopram would not only disrupt habituation, but also sensory and sensorimotor gating. Twenty healthy male volunteers received either placebo or 15mg escitalopram, after which they were tested in a P50...... suppression, and a habituation and prepulse inhibition (PPI) of the startle reflex paradigm. Escitalopram significantly decreased P50 suppression and habituation, but had no effect on PPI. The results indicate that habituation and sensory gating are disrupted by increased serotonergic activity, while...

Hetero-gate-dielectric double gate junctionless transistor (HGJLT) with reduced band-to-band tunnelling effects in subthreshold regime

International Nuclear Information System (INIS)

Ghosh, Bahniman; Mondal, Partha; Akram, M. W.; Bal, Punyasloka; Salimath, Akshay Kumar

2014-01-01

We propose a hetero-gate-dielectric double gate junctionless transistor (HGJLT), taking high-k gate insulator at source side and low-k gate insulator at drain side, which reduces the effects of band-to-band tunnelling (BTBT) in the sub-threshold region. A junctionless transistor (JLT) is turned off by the depletion of carriers in the highly doped thin channel (device layer) which results in a significant band overlap between the valence band of the channel region and the conduction band of the drain region, due to off-state drain bias, that triggers electrons to tunnel from the valence band of the channel region to the conduction band of the drain region leaving behind holes in the channel. These effects of band-to-band tunnelling increase the sub-threshold leakage current, and the accumulation of holes in the channel forms a parasitic bipolar junction transistor (n–p–n BJT for channel JLT) in the lateral direction by the source (emitter), channel (base) and drain (collector) regions in JLT structure in off-state. The proposed HGJLT reduces the subthreshold leakage current and suppresses the parasitic BJT action in off-state by reducing the band-to-band tunnelling probability. (semiconductor devices)

Voltage-dependent gating in a "voltage sensor-less" ion channel.

Directory of Open Access Journals (Sweden)

Harley T Kurata

2010-02-01

Full Text Available The voltage sensitivity of voltage-gated cation channels is primarily attributed to conformational changes of a four transmembrane segment voltage-sensing domain, conserved across many levels of biological complexity. We have identified a remarkable point mutation that confers significant voltage dependence to Kir6.2, a ligand-gated channel that lacks any canonical voltage-sensing domain. Similar to voltage-dependent Kv channels, the Kir6.2[L157E] mutant exhibits time-dependent activation upon membrane depolarization, resulting in an outwardly rectifying current-voltage relationship. This voltage dependence is convergent with the intrinsic ligand-dependent gating mechanisms of Kir6.2, since increasing the membrane PIP2 content saturates Po and eliminates voltage dependence, whereas voltage activation is more dramatic when channel Po is reduced by application of ATP or poly-lysine. These experiments thus demonstrate an inherent voltage dependence of gating in a "ligand-gated" K+ channel, and thereby provide a new view of voltage-dependent gating mechanisms in ion channels. Most interestingly, the voltage- and ligand-dependent gating of Kir6.2[L157E] is highly sensitive to intracellular [K+], indicating an interaction between ion permeation and gating. While these two key features of channel function are classically dealt with separately, the results provide a framework for understanding their interaction, which is likely to be a general, if latent, feature of the superfamily of cation channels.

Image-guided adaptive gating of lung cancer radiotherapy: a computer simulation study

Energy Technology Data Exchange (ETDEWEB)

Aristophanous, Michalis; Rottmann, Joerg; Park, Sang-June; Berbeco, Ross I [Department of Radiation Oncology, Brigham and Women' s Hospital, Dana Farber Cancer Institute and Harvard Medical School, Boston, MA (United States); Nishioka, Seiko [Department of Radiology, NTT Hospital, Sapporo (Japan); Shirato, Hiroki, E-mail: maristophanous@lroc.harvard.ed [Department of Radiation Medicine, Hokkaido University School of Medicine, Sapporo (Japan)

2010-08-07

The purpose of this study is to investigate the effect that image-guided adaptation of the gating window during treatment could have on the residual tumor motion, by simulating different gated radiotherapy techniques. There are three separate components of this simulation: (1) the 'Hokkaido Data', which are previously measured 3D data of lung tumor motion tracks and the corresponding 1D respiratory signals obtained during the entire ungated radiotherapy treatments of eight patients, (2) the respiratory gating protocol at our institution and the imaging performed under that protocol and (3) the actual simulation in which the Hokkaido Data are used to select tumor position information that could have been collected based on the imaging performed under our gating protocol. We simulated treatments with a fixed gating window and a gating window that is updated during treatment. The patient data were divided into different fractions, each with continuous acquisitions longer than 2 min. In accordance to the imaging performed under our gating protocol, we assume that we have tumor position information for the first 15 s of treatment, obtained from kV fluoroscopy, and for the rest of the fractions the tumor position is only available during the beam-on time from MV imaging. The gating window was set according to the information obtained from the first 15 s such that the residual motion was less than 3 mm. For the fixed gating window technique the gate remained the same for the entire treatment, while for the adaptive technique the range of the tumor motion during beam-on time was measured and used to adapt the gating window to keep the residual motion below 3 mm. The algorithm used to adapt the gating window is described. The residual tumor motion inside the gating window was reduced on average by 24% for the patients with regular breathing patterns and the difference was statistically significant (p-value = 0.01). The magnitude of the residual tumor motion

New efficient five-input majority gate for quantum-dot cellular automata

International Nuclear Information System (INIS)

Farazkish, Razieh; Navi, Keivan

2012-01-01

A novel fault-tolerant five-input majority gate for quantum-dot cellular automata is presented. Quantum-dot cellular automata (QCA) is an emerging technology which is considered to be presented in future computers. Two principle logic elements in QCA are “majority gate” and “inverter.” In this paper, we propose a new approach to the design of fault-tolerant five-input majority gate by considering two-dimensional arrays of QCA cells. We analyze fault tolerance properties of such block five-input majority gate in terms of misalignment, missing, and dislocation cells. Some physical proofs are used for verifying five-input majority gate circuit layout and functionality. Our results clearly demonstrate that the redundant version of the block five-input majority gate is more robust than the standard style for this gate.

Design Principles of A Sigma-delta Flux-gate Magnetometer

Science.gov (United States)

Magnes, W.; Valavanoglou, A.; Pierce, D.; Frank, A.; Schwingenschuh, K.

A state-of-the-art flux-gate magnetometer is characterised by magnetic field resolution of several pT in a wide frequency range, low power consumption, low weight and high robustness. Therefore, flux-gate magnetometers are frequently used for ground-based Earth's field observation as well as for measurements aboard scientific space missions. But both traditional analogue and recently developed digital flux-gate magnetometers need low power and high-resolution analogue-to-digital converters for signal quan- tization. The disadvantage of such converters is the low radiation hardness. This fact has led to the idea of combining a traditional analogue flux-gate regulation circuit with that of a discretely realized sigma-delta converter in order to get a radiation hard and further miniaturized magnetometer. The name sigma-delta converter is derived from putting an integrator in front of a 1-bit delta modulator which forms the sigma-delta loop. It is followed by a digital decimation filter realized in a field-programmable gate array (FPGA). The flux-gate regulation and the sigma-delta loop are quite similar in the way of realizing the integrator and feedback circuit, which makes it easy to com- bine these two systems. The presented talk deals with the design principles and the results of a first bread board model.

Micro-mechanical resonators for dynamically reconfigurable reduced voltage logic gates

Science.gov (United States)

Chappanda, K. N.; Ilyas, S.; Younis, M. I.

2018-05-01

Due to the limitations of transistor-based logic devices such as their poor performance at elevated temperature, alternative computing methods are being actively investigated. In this work, we present electromechanical logic gates using electrostatically coupled in-plane micro-cantilever resonators operated at modest vacuum conditions of 5 Torr. Operating in the first resonant mode, we demonstrate 2-bit XOR, 2- and 3-bit AND, 2- and 3-bit NOR, and 1-bit NOT gates; all condensed in the same device. Through the designed electrostatic coupling, the required voltage for the logic gates is reduced by 80%, along with the reduction in the number of electrical interconnects and devices per logic operation (contrary to transistors). The device is dynamically reconfigurable between any logic gates in real time without the need for any change in the electrical interconnects and the drive circuit. By operating in the first two resonant vibration modes, we demonstrate mechanical logic gates consisting of two 2-bit AND and two 2-bit XOR gates. The device is tested at elevated temperatures and is shown to be functional as a logic gate up to 150 °C. Also, the device has high reliability with demonstrated lifetime greater than 5  ×  1012 oscillations.

Micro-mechanical resonators for dynamically reconfigurable reduced voltage logic gates

KAUST Repository

Chappanda, K N

2018-02-16

Due to the limitations of transistor-based logic devices such as their poor performance at elevated temperature, alternative computing methods are being actively investigated. In this work, we present electromechanical logic gates using electrostatically coupled in-plane micro-cantilever resonators operated at modest vacuum conditions of 5 Torr. Operating in the first resonant mode, we demonstrate 2-bit XOR, 2- and 3-bit AND, 2- and 3-bit NOR, and 1-bit NOT gates; all condensed in the same device. Through the designed electrostatic coupling, the required voltage for the logic gates is reduced by 80%, along with the reduction in the number of electrical interconnects and devices per logic operation (contrary to transistors). The device is dynamically reconfigurable between any logic gates in real time without the need for any change in the electrical interconnects and the drive circuit. By operating in the first two resonant vibration modes, we demonstrate mechanical logic gates consisting of two 2-bit AND and two 2-bit XOR gates. The device is tested at elevated temperatures and is shown to be functional as a logic gate up to 150 °C. Also, the device has high reliability with demonstrated lifetime greater than 5 × 10 oscillations.

Micro-mechanical resonators for dynamically reconfigurable reduced voltage logic gates

KAUST Repository

Chappanda , K. N.; Ilyas, Saad; Younis, Mohammad I.

2018-01-01

Due to the limitations of transistor-based logic devices such as their poor performance at elevated temperature, alternative computing methods are being actively investigated. In this work, we present electromechanical logic gates using electrostatically coupled in-plane micro-cantilever resonators operated at modest vacuum conditions of 5 Torr. Operating in the first resonant mode, we demonstrate 2-bit XOR, 2- and 3-bit AND, 2- and 3-bit NOR, and 1-bit NOT gates; all condensed in the same device. Through the designed electrostatic coupling, the required voltage for the logic gates is reduced by 80%, along with the reduction in the number of electrical interconnects and devices per logic operation (contrary to transistors). The device is dynamically reconfigurable between any logic gates in real time without the need for any change in the electrical interconnects and the drive circuit. By operating in the first two resonant vibration modes, we demonstrate mechanical logic gates consisting of two 2-bit AND and two 2-bit XOR gates. The device is tested at elevated temperatures and is shown to be functional as a logic gate up to 150 °C. Also, the device has high reliability with demonstrated lifetime greater than 5 × 10 oscillations.

Radiation-hardened optically reconfigurable gate array exploiting holographic memory characteristics

Science.gov (United States)

Seto, Daisaku; Watanabe, Minoru

2015-09-01

In this paper, we present a proposal for a radiation-hardened optically reconfigurable gate array (ORGA). The ORGA is a type of field programmable gate array (FPGA). The ORGA configuration can be executed by the exploitation of holographic memory characteristics even if 20% of the configuration data are damaged. Moreover, the optoelectronic technology enables the high-speed reconfiguration of the programmable gate array. Such a high-speed reconfiguration can increase the radiation tolerance of its programmable gate array to 9.3 × 104 times higher than that of current FPGAs. Through experimentation, this study clarified the configuration dependability using the impulse-noise emulation and high-speed configuration capabilities of the ORGA with corrupt configuration contexts. Moreover, the radiation tolerance of the programmable gate array was confirmed theoretically through probabilistic calculation.

Universal quantum gates for Single Cooper Pair Box based quantum computing

Science.gov (United States)

Echternach, P.; Williams, C. P.; Dultz, S. C.; Braunstein, S.; Dowling, J. P.

2000-01-01

We describe a method for achieving arbitrary 1-qubit gates and controlled-NOT gates within the context of the Single Cooper Pair Box (SCB) approach to quantum computing. Such gates are sufficient to support universal quantum computation.

A split accumulation gate architecture for silicon MOS quantum dots

Science.gov (United States)

Rochette, Sophie; Rudolph, Martin; Roy, Anne-Marie; Curry, Matthew; Ten Eyck, Gregory; Dominguez, Jason; Manginell, Ronald; Pluym, Tammy; King Gamble, John; Lilly, Michael; Bureau-Oxton, Chloé; Carroll, Malcolm S.; Pioro-Ladrière, Michel

We investigate tunnel barrier modulation without barrier electrodes in a split accumulation gate architecture for silicon metal-oxide-semiconductor quantum dots (QD). The layout consists of two independent accumulation gates, one gate forming a reservoir and the other the QD. The devices are fabricated with a foundry-compatible, etched, poly-silicon gate stack. We demonstrate 4 orders of magnitude of tunnel-rate control between the QD and the reservoir by modulating the reservoir gate voltage. Last electron charging energies of app. 10 meV and tuning of the ST splitting in the range 100-200 ueV are observed in two different split gate layouts and labs. This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

Optimal control of universal quantum gates in a double quantum dot

Science.gov (United States)

Castelano, Leonardo K.; de Lima, Emanuel F.; Madureira, Justino R.; Degani, Marcos H.; Maialle, Marcelo Z.

2018-06-01

We theoretically investigate electron spin operations driven by applied electric fields in a semiconductor double quantum dot (DQD) formed in a nanowire with longitudinal potential modulated by local gating. We develop a model that describes the process of loading and unloading the DQD taking into account the overlap between the electron wave function and the leads. Such a model considers the spatial occupation and the spin Pauli blockade in a time-dependent fashion due to the highly mixed states driven by the external electric field. Moreover, we present a road map based on the quantum optimal control theory (QOCT) to find a specific electric field that performs two-qubit quantum gates on a faster timescale and with higher possible fidelity. By employing the QOCT, we demonstrate the possibility of performing within high efficiency a universal set of quantum gates {cnot, H, and T } , where cnot is the controlled-not gate, H is the Hadamard gate, and T is the π /8 gate, even in the presence of the loading/unloading process and charge noise effects. Furthermore, by varying the intensity of the applied magnetic field B , the optimized fidelity of the gates oscillates with a period inversely proportional to the gate operation time tf. This behavior can be useful to attain higher fidelity for fast gate operations (>1 GHz) by appropriately choosing B and tf to produce a maximum of the oscillation.

Comparison of respiratory surrogates for gated lung radiotherapy without internal fiducials

International Nuclear Information System (INIS)

Korreman, S.; Mostafavi, H.; Le, Q.T.; Boyer, A.

2006-01-01

An investigation was carried out to compare the ability of two respiratory surrogates to mimic actual lung tumor motion during audio coaching. The investigation employed video clips acquired after patients had had fiducial markers implanted in lung tumors to be used for image-guided stereoscopic radiotherapy. The positions of the markers in the clips were measured within the video frames and used as the standard for tumor volume motion. An external marker was tracked optically during the fluoroscopic acquisitions. An image correlation technique was developed to compute a gating signal from the fluoroscopic images. The correlation gating trace was similar to the optical gating trace in the phase regions of the respiratory cycle used for gating. A cross correlation analysis and comparison of the external optical marker gating with internal fluoroscopic gating was performed. The fluoroscopic image correlation surrogate was found to be superior to the external optical surrogate in the AP-views in four out of six cases. In one of the remaining two cases, the two surrogates performed comparably, while in the last case, the external fiducial trace performed best. It was concluded that fluoroscopic gating based on correlation of native image features in the fluoroscopic images will be adequate for respiratory gating

Comparison of respiratory surrogates for gated lung radiotherapy without internal fiducials

Energy Technology Data Exchange (ETDEWEB)

Korreman, S. [Rigshospitalet, Copenhagen (Denmark). Dept. of Radiation Oncology; Mostafavi, H. [Varian Medical Systems, Mountain View, CA (United States). Gintzon Technology Center; Le, Q.T.; Boyer, A. [Stanford Univ. School of Medicine, CA (United States). Dept. of Radiation Oncology

2006-09-15

An investigation was carried out to compare the ability of two respiratory surrogates to mimic actual lung tumor motion during audio coaching. The investigation employed video clips acquired after patients had had fiducial markers implanted in lung tumors to be used for image-guided stereoscopic radiotherapy. The positions of the markers in the clips were measured within the video frames and used as the standard for tumor volume motion. An external marker was tracked optically during the fluoroscopic acquisitions. An image correlation technique was developed to compute a gating signal from the fluoroscopic images. The correlation gating trace was similar to the optical gating trace in the phase regions of the respiratory cycle used for gating. A cross correlation analysis and comparison of the external optical marker gating with internal fluoroscopic gating was performed. The fluoroscopic image correlation surrogate was found to be superior to the external optical surrogate in the AP-views in four out of six cases. In one of the remaining two cases, the two surrogates performed comparably, while in the last case, the external fiducial trace performed best. It was concluded that fluoroscopic gating based on correlation of native image features in the fluoroscopic images will be adequate for respiratory gating.

Factors influencing resident's decision to reside in gated and guarded community

Science.gov (United States)

Shamsudin, Zarina; Shamsudin, Shafiza; Zainal, Rozlin

2017-10-01

Gated communities are residential areas developed with restricted access with strictly controlled entrances and surrounded by a close perimeter of wall or fences. Developers, conscious of the need to fulfill the requirement of living in modern and sophisticated lifestyle and gated properties become the trend and mushroomed over the past decade. Nowadays, it is obvious that gated and guarded communities become almost a dominant feature of Malaysia housing development projects. The focus of this paper is to identify the factors contribute resident's decision to reside in gated and guarded community and to study social interaction among gated communities' residents. 150 questionnaires were distributed to the residents of selected gated and guarded community area in order to achieve the objectives and analyzed by using Statistical Package for Social Science (SPSS) and descriptive analysis. The result was tabulated and presented in charts and graphs for a clear and better understanding. The five main factors contribute to resident decision to reside in gated communities were identified and ranked; there are privacy, security, location, lifestyle and prestige. Besides, the residents are feeling neutral towards the facilities and services provided in their gated and guarded residential area. A comprehensive improvement towards the facilities and services is needed to reach higher satisfaction from the residents.

An optical fusion gate for W-states

Science.gov (United States)

Özdemir, Ş. K.; Matsunaga, E.; Tashima, T.; Yamamoto, T.; Koashi, M.; Imoto, N.

2011-10-01

We introduce a simple optical gate to fuse arbitrary-size polarization entangled W-states to prepare larger W-states. The gate requires a polarizing beam splitter (PBS), a half-wave plate (HWP) and two photon detectors. We study, numerically and analytically, the necessary resource consumption for preparing larger W-states by fusing smaller ones with the proposed fusion gate. We show analytically that resource requirement scales at most sub-exponentially with the increasing size of the state to be prepared. We numerically determine the resource cost for fusion without recycling where W-states of arbitrary size can be optimally prepared. Moreover, we introduce another strategy that is based on recycling and outperforms the optimal strategy for the non-recycling case.

An optical fusion gate for W-states

Energy Technology Data Exchange (ETDEWEB)

Oezdemir, S K [Department of Electrical and Systems Engineering, Washington University, St. Louis, MO 63130 (United States); Matsunaga, E; Tashima, T; Yamamoto, T; Koashi, M; Imoto, N, E-mail: ozdemir@ese.wustl.edu [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan)

2011-10-15

We introduce a simple optical gate to fuse arbitrary-size polarization entangled W-states to prepare larger W-states. The gate requires a polarizing beam splitter (PBS), a half-wave plate (HWP) and two photon detectors. We study, numerically and analytically, the necessary resource consumption for preparing larger W-states by fusing smaller ones with the proposed fusion gate. We show analytically that resource requirement scales at most sub-exponentially with the increasing size of the state to be prepared. We numerically determine the resource cost for fusion without recycling where W-states of arbitrary size can be optimally prepared. Moreover, we introduce another strategy that is based on recycling and outperforms the optimal strategy for the non-recycling case. (paper)

An optical fusion gate for W-states

International Nuclear Information System (INIS)

Oezdemir, S K; Matsunaga, E; Tashima, T; Yamamoto, T; Koashi, M; Imoto, N

2011-01-01

We introduce a simple optical gate to fuse arbitrary-size polarization entangled W-states to prepare larger W-states. The gate requires a polarizing beam splitter (PBS), a half-wave plate (HWP) and two photon detectors. We study, numerically and analytically, the necessary resource consumption for preparing larger W-states by fusing smaller ones with the proposed fusion gate. We show analytically that resource requirement scales at most sub-exponentially with the increasing size of the state to be prepared. We numerically determine the resource cost for fusion without recycling where W-states of arbitrary size can be optimally prepared. Moreover, we introduce another strategy that is based on recycling and outperforms the optimal strategy for the non-recycling case. (paper)

Ultra-low specific on-resistance SOI double-gate trench-type MOSFET

International Nuclear Information System (INIS)

Lei Tianfei; Luo Xiaorong; Ge Rui; Chen Xi; Wang Yuangang; Yao Guoliang; Jiang Yongheng; Zhang Bo; Li Zhaoji

2011-01-01

An ultra-low specific on-resistance (R on,sp ) silicon-on-insulator (SOI) double-gate trench-type MOSFET (DG trench MOSFET) is proposed. The MOSFET features double gates and an oxide trench: the oxide trench is in the drift region, one trench gate is inset in the oxide trench and one trench gate is extended into the buried oxide. Firstly, the double gates reduce R on,sp by forming dual conduction channels. Secondly, the oxide trench not only folds the drift region, but also modulates the electric field, thereby reducing device pitch and increasing the breakdown voltage (BV). ABV of 93 V and a R on,sp of 51.8 mΩ·mm 2 is obtained for a DG trench MOSFET with a 3 μm half-cell pitch. Compared with a single-gate SOI MOSFET (SG MOSFET) and a single-gate SOI MOSFET with an oxide trench (SG trench MOSFET), the R on,sp of the DG trench MOSFET decreases by 63.3% and 33.8% at the same BV, respectively. (semiconductor devices)

The effect of gate length on SOI-MOSFETS operation | Baedi ...

African Journals Online (AJOL)

The effect of gate length on the operation of silicon-on-insulator (SOI) MOSFET structure with a layer of buried silicon oxide added to isolate the device body has been simulated. Three transistors with gate lengths of 100, 200 and 500 nm were simulated. Simulations showed that with a fixed channel length, when the gate ...

Clinical evaluation of the Tl-201 ECG-gated myocardial SPECT

International Nuclear Information System (INIS)

Mochizuki, Teruhito

1989-01-01

In order to evaluate the clinical usefulness of the Tl-201 ECG-gated myocardial single photon emission computed tomography (SPECT), we compared the wall motion and the grade of the Tl-201 uptake of the ECG-gated myocardial SPECT with the wall motion of the ECG-gated blood pool SPECT. Materials were 87 patients of 50 old myocardial infarctions (OMIs), 19 hypertrophic cardiomyopathies (HCMs), 2 dilated cardiomyopathies (DCMs) and 16 others. After intravenous injection of 111-185 MBq (3-5 mCi) of Tl-201 at rest, the projection data were acquired using a rotating gamma-camera through 180deg, from RAO 45deg in 24 directions, each of which consisted of 80-100 beats. For the reconstruction of ED, ES and non-gated images, R-R interval was divided into about 20 (18-22) fractions. In 348 regions of interest (anterior, septal, lateral and inferior wall) in 87 cases, wall motion and the Tl-201 uptake were evaluated to three grades (normal, hypokinesis and akinesis; normal, low and defect, respectively), which were compared with the wall motion of the ECG-gated blood pool SPECT. The wall motion and the grade of the Tl-201 uptake of the ECG-gated myocardial SPECT correlated well with the wall motion of the ECG-gated blood pool SPECT (96.6% and 87.9%, respectively). In conclusion, the ECG-gated myocardial SPECT can provide clear perfusion images and is a very useful diagnostic strategy to evaluate the regional wall motion and perfusion simultaneously. (author)

Transcending binary logic by gating three coupled quantum dots.

Science.gov (United States)

Klein, Michael; Rogge, S; Remacle, F; Levine, R D

2007-09-01

Physical considerations supported by numerical solution of the quantum dynamics including electron repulsion show that three weakly coupled quantum dots can robustly execute a complete set of logic gates for computing using three valued inputs and outputs. Input is coded as gating (up, unchanged, or down) of the terminal dots. A nanosecond time scale switching of the gate voltage requires careful numerical propagation of the dynamics. Readout is the charge (0, 1, or 2 electrons) on the central dot.

Defense.gov Special Report: Travels with Gates - October 2010

Science.gov (United States)

- Secretary of State Hillary Rodham Clinton and Defense Secretary Robert M. Gates expressed support for the Travels Top Story Clinton, Gates Voice Support For Afghan Reconciliation BRUSSELS, Belgium, Oct. 14, 2010

Analyzing Single-Event Gate Ruptures In Power MOSFET's

Science.gov (United States)

Zoutendyk, John A.

1993-01-01

Susceptibilities of power metal-oxide/semiconductor field-effect transistors (MOSFET's) to single-event gate ruptures analyzed by exposing devices to beams of energetic bromine ions while applying appropriate bias voltages to source, gate, and drain terminals and measuring current flowing into or out of each terminal.

SU-E-T-401: Feasibility Study of Using ABC to Gate Lung SBRT Treatment

International Nuclear Information System (INIS)

Cao, D; Xie, X; Shepard, D

2014-01-01

Purpose: The current SBRT treatment techniques include free breathing (FB) SBRT and gated FB SBRT. Gated FB SBRT has smaller target and less lung toxicity with longer treatment time. The recent development of direct connectivity between the ABC and linac allowing for automated beam gating. In this study, we have examined the feasibility of using ABC system to gate the lung SBRT treatment. Methods: A CIRS lung phantom with a 3cm sphere-insert and a moving chest plate was used in this study. Sinusoidal motion was used for the FB pattern. An ABC signal was imported to simulate breath holds. 4D-CT was taken in FB mode and average-intensity-projection (AIP) was used to create FB and 50% gated FB SBRT planning CT. A manually gated 3D CT scan was acquired for ABC gated SBRT planning.An SBRT plan was created for each treatment option. A surface-mapping system was used for 50% gating and ABC system was used for ABC gating. A manually gated CBCT scan was also performed to verify setup. Results: Among three options, the ABC gated plan has the smallest PTV of 35.94cc, which is 35% smaller comparing to that of the FB plan. Consequently, the V20 of the left lung reduced by 15% and 23% comparing to the 50% gated FB and FB plans, respectively. The FB plan took 4.7 minutes to deliver, while the 50% gated FB plan took 18.5 minutes. The ABC gated plan delivery took only 10.6 minutes. A stationary target with 3cm diameter was also obtained from the manually gated CBCT scan. Conclusion: A strategy for ABC gated lung SBRT was developed. ABC gating can significantly reduce the lung toxicity while maintaining the target coverage. Comparing to the 50% gated FB SBRT, ABC gated treatment can also provide less lung toxicity as well as improved delivery efficiency. This research is funded by Elekta

Implementation of fault-tolerant quantum logic gates via optimal control

International Nuclear Information System (INIS)

Nigmatullin, R; Schirmer, S G

2009-01-01

The implementation of fault-tolerant quantum gates on encoded logic qubits is considered. It is shown that transversal implementation of logic gates based on simple geometric control ideas is problematic for realistic physical systems suffering from imperfections such as qubit inhomogeneity or uncontrollable interactions between qubits. However, this problem can be overcome by formulating the task as an optimal control problem and designing efficient algorithms to solve it. In particular, we can find solutions that implement all of the elementary logic gates in a fixed amount of time with limited control resources for the five-qubit stabilizer code. Most importantly, logic gates that are extremely difficult to implement using conventional techniques even for ideal systems, such as the T-gate for the five-qubit stabilizer code, do not appear to pose a problem for optimal control.

Towards Self-Clocked Gated OCDMA Receiver

Science.gov (United States)

Idris, S.; Osadola, T.; Glesk, I.

2013-02-01

A novel incoherent OCDMA receiver with incorporated all-optical clock recovery for self-synchronization of a time gate for the multi access interferences (MAI) suppression and minimizing the effect of data time jitter in incoherent OCDMA system was successfully developed and demonstrated. The solution was implemented and tested in a multiuser environment in an out of the laboratory OCDMA testbed with two-dimensional wavelength-hopping time-spreading coding scheme and OC-48 (2.5 Gbp/s) data rate. The self-clocked all-optical time gate uses SOA-based fibre ring laser optical clock, recovered all-optically from the received OCDMA traffic to control its switching window for cleaning the autocorrelation peak from the surrounding MAI. A wider eye opening was achieved when the all-optically recovered clock from received data was used for synchronization if compared to a static approach with the RF clock being generated by a RF synthesizer. Clean eye diagram was also achieved when recovered clock is used to drive time gating.

Proposal of unilateral single-flux-quantum logic gate

International Nuclear Information System (INIS)

Mikaye, H.; Fukaya, N.; Okabe, Y.; Sugamo, T.

1985-01-01

A new type of single flux quantum logic gate is proposed, which can perform unilateral propagation of signal without using three-phase clock. This gate is designed to be built with bridge-type Josephson junctions. A basic logic gate consists of two one-junction interferometers coupled by superconducting interconnecting lines, and the logical states are represented by zero or one quantized fluxoid in one of one-junction interferometers. The bias current of the unequal magnitude to each of the two one-junction interferometers results in unilateral signal flow. By adjusting design parameters such as the ratio of the critical current of Josephson junctions and the inductances, circuits with the noise immunity of greater than 50% with respect to the bias current have been designed. Three cascaded gates were modeled and simulated on a computer, and the unilateral signal flow was confirmed. The simulation also shows that a switching delay about 2 picoseconds is feasible

Impact of sea level rise on tide gate function.

Science.gov (United States)

Walsh, Sean; Miskewitz, Robert

2013-01-01

Sea level rise resulting from climate change and land subsidence is expected to severely impact the duration and associated damage resulting from flooding events in tidal communities. These communities must continuously invest resources for the maintenance of existing structures and installation of new flood prevention infrastructure. Tide gates are a common flood prevention structure for low-lying communities in the tidal zone. Tide gates close during incoming tides to prevent inundation from downstream water propagating inland and open during outgoing tides to drain upland areas. Higher downstream mean sea level elevations reduce the effectiveness of tide gates by impacting the hydraulics of the system. This project developed a HEC-RAS and HEC-HMS model of an existing tide gate structure and its upland drainage area in the New Jersey Meadowlands to simulate the impact of rising mean sea level elevations on the tide gate's ability to prevent upstream flooding. Model predictions indicate that sea level rise will reduce the tide gate effectiveness resulting in longer lasting and deeper flood events. The results indicate that there is a critical point in the sea level elevation for this local area, beyond which flooding scenarios become dramatically worse and would have a significantly negative impact on the standard of living and ability to do business in one of the most densely populated areas of America.

COHERENTLY DEDISPERSED GATED IMAGING OF MILLISECOND PULSARS

International Nuclear Information System (INIS)

Roy, Jayanta; Bhattacharyya, Bhaswati

2013-01-01

Motivated by the need for rapid localization of newly discovered faint millisecond pulsars (MSPs), we have developed a coherently dedispersed gating correlator. This gating correlator accounts for the orbital motions of MSPs in binaries while folding the visibilities with a best-fit topocentric rotational model derived from a periodicity search in a simultaneously generated beamformer output. Unique applications of the gating correlator for sensitive interferometric studies of MSPs are illustrated using the Giant Metrewave Radio Telescope (GMRT) interferometric array. We could unambiguously localize five newly discovered Fermi MSPs in the on-off gated image plane with an accuracy of ±1''. Immediate knowledge of such a precise position enables the use of sensitive coherent beams of array telescopes for follow-up timing observations which substantially reduces the use of telescope time (∼20× for the GMRT). In addition, a precise a priori astrometric position reduces the effect of large covariances in the timing fit (with discovery position, pulsar period derivative, and an unknown binary model), which in-turn accelerates the convergence to the initial timing model. For example, while fitting with the precise a priori position (±1''), the timing model converges in about 100 days, accounting for the effect of covariance between the position and pulsar period derivative. Moreover, such accurate positions allow for rapid identification of pulsar counterparts at other wave bands. We also report a new methodology of in-beam phase calibration using the on-off gated image of the target pulsar, which provides optimal sensitivity of the coherent array removing possible temporal and spacial decoherences.

COHERENTLY DEDISPERSED GATED IMAGING OF MILLISECOND PULSARS

Energy Technology Data Exchange (ETDEWEB)

Roy, Jayanta; Bhattacharyya, Bhaswati [National Centre for Radio Astrophysics, Pune 411007 (India)

2013-03-10

Motivated by the need for rapid localization of newly discovered faint millisecond pulsars (MSPs), we have developed a coherently dedispersed gating correlator. This gating correlator accounts for the orbital motions of MSPs in binaries while folding the visibilities with a best-fit topocentric rotational model derived from a periodicity search in a simultaneously generated beamformer output. Unique applications of the gating correlator for sensitive interferometric studies of MSPs are illustrated using the Giant Metrewave Radio Telescope (GMRT) interferometric array. We could unambiguously localize five newly discovered Fermi MSPs in the on-off gated image plane with an accuracy of {+-}1''. Immediate knowledge of such a precise position enables the use of sensitive coherent beams of array telescopes for follow-up timing observations which substantially reduces the use of telescope time ({approx}20 Multiplication-Sign for the GMRT). In addition, a precise a priori astrometric position reduces the effect of large covariances in the timing fit (with discovery position, pulsar period derivative, and an unknown binary model), which in-turn accelerates the convergence to the initial timing model. For example, while fitting with the precise a priori position ({+-}1''), the timing model converges in about 100 days, accounting for the effect of covariance between the position and pulsar period derivative. Moreover, such accurate positions allow for rapid identification of pulsar counterparts at other wave bands. We also report a new methodology of in-beam phase calibration using the on-off gated image of the target pulsar, which provides optimal sensitivity of the coherent array removing possible temporal and spacial decoherences.

Adder design using a 5-input majority gate in a novel “multilayer gate design paradigm” for quantum dot cellular automata circuits

International Nuclear Information System (INIS)

Kumar, Rohit; Ghosh, Bahniman; Gupta, Shoubhik

2015-01-01

This paper proposes a novel design paradigm for circuits designed in quantum dot cellular automata (QCA) technology. Previously reported QCA circuits in the literature have generally been designed in a single layer which is the main logical block in which the inverter and majority gate are on the base layer, except for the parts where multilayer wire crossing was used. In this paper the concept of multilayer wire crossing has been extended to design logic gates in multilayers. Using a 5-input majority gate in a multilayer, a 1-bit and 2-bit adder have been designed in the proposed multilayer gate design paradigm. A comparison has been made with some adders reported previously in the literature and it has been shown that circuits designed in the proposed design paradigm are much more efficient in terms of area, the requirement of QCA cells in the design and the input–output delay of the circuit. Over all, the availability of one additional spatial dimension makes the design process much more flexible and there is scope for the customizability of logic gate designs to make the circuit compact. (paper)

Assessment of left ventricular function by electrocardiogram-gated myocardial single photon emission computed tomography using quantitative gated single photon emission computed tomography software

International Nuclear Information System (INIS)

Morita, Koichi; Adachi, Itaru; Konno, Masanori

1999-01-01

Electrocardiogram (ECG)-gated myocardial single photon emission computed tomography (SPECT) can assess left ventricular (LV) perfusion and function easily using quantitative gated SPECT (QGS) software. ECG-gated SPECT was performed in 44 patients with coronary artery disease under post-stress and resting conditions to assess the values of LV functional parameters, by comparison to LV ejection fraction derived from gated blood pool scan and myocardial characteristics. A good correlation was obtained between ejection fraction using QGS and that using cardiac blood pool scan (r=0.812). Some patients with myocardial ischemia had lower ejection fraction under post-stress compared to resting conditions, indicating post-stress LV dysfunction. LV wall motion and wall thickening were significantly impaired in ischemic and infarcted myocardium, and the degree of abnormality in the infarcted areas was greater than in the ischemia area. LV functional parameters derived using QGS were useful to assess post-stress LV dysfunction and myocardial viability. In conclusion, ECG-gated myocardial SPECT permits simultaneous quantitative assessment of myocardial perfusion and function. (author)

Gate controlled high efficiency ballistic energy conversion system

NARCIS (Netherlands)

Xie, Yanbo; Bos, Diederik; de Boer, Hans L.; van den Berg, Albert; Eijkel, Jan C.T.; Zengerle, R.

2013-01-01

Last year we demonstrated the microjet ballistic energy conversion system[1]. Here we show that the efficiency of such a system can be further improved by gate control. With gate control the electrical current generation is enhanced a hundred times with respect to the current generated from the zeta

Formation of p-n-p junction with ionic liquid gate in graphene

International Nuclear Information System (INIS)

He, Xin; Tang, Ning; Duan, Junxi; Zhang, Yuewei; Lu, Fangchao; Xu, Fujun; Yang, Xuelin; Gao, Li; Wang, Xinqiang; Shen, Bo; Ge, Weikun

2014-01-01

Ionic liquid gating is a technique which is much more efficient than solid gating to tune carrier density. To observe the electronic properties of such a highly doped graphene device, a top gate made of ionic liquid has been used. By sweeping both the top and back gate voltage, a p-n-p junction has been created. The mechanism of forming the p-n-p junction has been discussed. Tuning the carrier density by ionic liquid gate can be an efficient method to be used in flexible electronics

Gating system design for the space device case using T-Flex CAD

Directory of Open Access Journals (Sweden)

Ayusheev Munkhe-Zul

2017-01-01

Full Text Available The judicious selection of gating system for the consumable pattern takes a lot of time, labour and other significant resources. The modern design technologies provide quick and effective ways for gating system calculation and casting process simulation. Gating system modeling allows estimating different kinds of defects which can occur at the developing stage of casting process. Moreover, it is possible to modify the whole gating system configuration if some parameters are changed. Analyzing these data and modifying the gating system characteristics high quality of castings can be achieved.

Isotropic gates and large gamma detector arrays versus angular distributions

International Nuclear Information System (INIS)

Iacob, V.E.; Duchene, G.

1997-01-01

Angular information extracted from in-beam γ ray measurements are of great importance for γ ray multipolarity and nuclear spin assignments. In our days large Ge detector arrays became available allowing the measurements of extremely weak γ rays in almost 4π sr solid angle (e.g., EUROGAM detector array). Given the high detector efficiency it is common for the mean suppressed coincidence multiplicity to reach values as high as 4 to 6. Thus, it is possible to gate on particular γ rays in order to enhance the relative statistics of a definite reaction channel and/or a definite decaying path in the level scheme of the selected residual nucleus. As compared to angular correlations, the conditioned angular distribution spectra exhibit larger statistics because in the latter the gate-setting γ ray may be observed by all the detectors in the array, relaxing somehow the geometrical restrictions of the angular correlations. Since the in-beam γ ray emission is anisotropic one could inquire that gate setting as mentioned above, based on anisotropic γ ray which would perturb the angular distributions in the unfolded events. As our work proved, there is no reason to worry about this if the energy gate runs over the whole solid angle in an ideal 4π sr detector, i.e., if the gate is isotropic. In real quasi 4π sr detector arrays the corresponding quasi isotropic gate preserves the angular properties of the unfolded data, too. However extraction of precise angular distribution coefficient especially a 4 , requires the consideration of the deviation of the quasi isotropic gate relative to the (ideal) isotropic gate

Right Ventricular Ejection Fraction using ECG-Gated First Pass Cardioangiography

Energy Technology Data Exchange (ETDEWEB)

Moon, Young Hee; Lee, Hae Giu; Lee, Sung Yong; Park, Suk Min; Chung, Soo Kyo; Yim, Jeong Ik; Bahk, Yong Whee; Shinn, Kyung Sub; Kim, Young Gyun; Kwon, Soon Seog [Catholic University College of Medicine, Seoul (Korea, Republic of)

1993-03-15

Radionuclide cardioangiography has been widely applied and has played major roles in moninvasive assessment of cardiac function. Three techniques, first-pass gated first and gated equilibrium methods have commonly been used to evaluate right ventricular ejection fraction which usually abnormal in the patients with cardiopulmonary disease. It has been known that the gated first pass method is most accurate method among the three techniques in assessment of fight ventricular ejection fraction. The radionuclide right ventricular ejection fraction values were determined in 13 normal subjects and in 15 patients with chronic obstructive pulmonary disease by the gated first pass method and compared with those of the first pass method because there has been no published data of fight ejection fraction by the gated first pass method were compared with the defects from the pulmonary function test performed in the patients with chronic obstructive pulmomary disease. The results were as follows; 1) The values of fight ventricular ejection fraction by the gated first pass method were 50.1 +- 6.1% in normal subjects and 38.5 +- 8.5 in the patients with chronic obstructive pulmonary disease. There was statistically significant difference between the right ventricular ejection fraction of each of the two groups (p<0.05) 2) The right ventricular ejection fraction by the gated first pass method was not linearly correlated ith FEV{sub 1}, VC. DLCO. and FVC as well as P{sub a}O2 and P{sub a}CO2 of the patients with chronic obstructive pulmonary disease. We concluded that right ventricular ejection fraction by the gated first pass method using radionuclide cardioangiography may be useful in clinical assessment of the right ventricular function.

Investigation of the stability of melt flow in gating systems

DEFF Research Database (Denmark)

Tiedje, Niels Skat; Larsen, Per

2011-01-01

Melt flow in four different gating systems designed for production of brake discs was analysed experimentally and by numerical modelling. In the experiments moulds were fitted with glass fronts and melt flow was recorded on video. The video recordings were compared with modelling of melt flow...... in the gating systems. Particular emphasis was on analysing local pressure and formation of pressure waves in the gating system. It was possible to compare melt flow patterns in experiments directly to modelled flow patterns. Generally there was good agreement between flow patterns and filling times. However...... description of free liquid surfaces proved to be incorrect in the numerical model. Modelled pressure fields served to explain how specific parts of the gating systems cause instability and are a good tool to describe the quality of a gating system. The results shows clearly that sharp changes in the geometry...

Trapped-ion quantum logic gates based on oscillating magnetic fields

Science.gov (United States)

Ospelkaus, Christian; Langer, Christopher E.; Amini, Jason M.; Brown, Kenton R.; Leibfried, Dietrich; Wineland, David J.

2009-05-01

Oscillating magnetic fields and field gradients can be used to implement single-qubit rotations and entangling multiqubit quantum gates for trapped-ion quantum information processing. With fields generated by currents in microfabricated surface-electrode traps, it should be possible to achieve gate speeds that are comparable to those of optically induced gates for realistic distances between the ions and the electrode surface. Magnetic-field-mediated gates have the potential to significantly reduce the overhead in laser-beam control and motional-state initialization compared to current QIP experiments with trapped ions and will eliminate spontaneous scattering decoherence, a fundamental source of decoherence in laser-mediated gates. A potentially beneficial environment for the implementation of such schemes is a cryogenic ion trap, because small length scale traps with low motional heating rates can be realized. A cryogenic ion trap experiment is currently under construction at NIST.

Dose profile measurements during respiratory-gated lung stereotactic radiotherapy: A phantom study

International Nuclear Information System (INIS)

Jong, W L; Ung, N M; Wong, J H D; Ng, K H

2016-01-01

During stereotactic body radiotherapy, high radiation dose (∼60 Gy) is delivered to the tumour in small fractionation regime. In this study, the dosimetric characteristics were studied using radiochromic film during respiratory-gated and non-gated lung stereotactic body radiotherapy (SBRT). Specifically, the effect of respiratory cycle and amplitude, as well as gating window on the dosimetry were studied. In this study, the dose profiles along the irradiated area were measured. The dose profiles for respiratory-gated radiation delivery with different respiratory or tumour motion amplitudes, gating windows and respiratory time per cycle were in agreement with static radiation delivery. The respiratory gating system was able to deliver the radiation dose accurately (±1.05 mm) in the longitudinal direction. Although the treatment time for respiratory-gated SBRT was prolonged, this approach can potentially reduce the margin for internal tumour volume without compromising the tumour coverage. In addition, the normal tissue sparing effect can be improved. (paper)

Pressure locking and thermal binding of gate valves

Energy Technology Data Exchange (ETDEWEB)

Kelly, E.M.

1996-12-01

Pressure locking and thermal binding represent potential common mode failure mechanisms that can cause safety-related power-operated gate valves to fail in the closed position, thus rendering redundant safety-related systems incapable of performing their safety functions. Supplement 6 to Generic Letter 89-10, {open_quotes}Safety-Related Motor-Operated Gate Valve Testing and Surveillance,{close_quotes} provided an acceptable approach to addressing pressure locking and thermal binding of gate valves. More recently, the NRC has issued Generic Letter 95-07, {open_quotes}Pressure Locking and Thermal Binding of Safety-Related Power-Operated Gate Valves,{close_quotes} to request that licensees take certain actions to ensure that safety-related power-operated gate valves that are susceptible to pressure locking or thermal binding are capable of performing their safety functions within the current licensing bases. Over the past two years, several plants in Region I determined that valves in certain systems were potentially susceptible to pressure locking and thermal binding, and have taken various corrective actions. The NRC Region I Systems Engineering Branch has been actively involved in the inspection of licensee actions in response to the pressure locking and thermal binding issue. Region I continues to maintain an active involvement in this area, including participation with the Office of Nuclear Reactor Regulation in reviewing licensee responses to Generic Letter 95-07.

Modeling of a quantized current and gate field-effect in gated three-terminal Cu2-αS electrochemical memristors

Directory of Open Access Journals (Sweden)

Y. Zhang

2015-02-01

Full Text Available Memristors exhibit very sharp off-to-on transitions with a large on/off resistance ratio. These remarkable characteristics coupled with their long retention time and very simple device geometry make them nearly ideal for three-terminal devices where the gate voltage can change their on/off voltages and/or simply turn them off, eliminating the need for bipolar operations. In this paper, we propose a cation migration-based computational model to explain the quantized current conduction and the gate field-effect in Cu2-αS memristors. Having tree-shaped conductive filaments inside a memristor is the reason for the quantized current conduction effect. Applying a gate voltage causes a deformation of the conductive filaments and thus controls the SET and the RESET process of the device.

Electron transport in a double quantum ring: Evidence of an AND gate

International Nuclear Information System (INIS)

Maiti, Santanu K.

2009-01-01

We explore AND gate response in a double quantum ring where each ring is threaded by a magnetic flux φ. The double quantum ring is attached symmetrically to two semi-infinite one-dimensional metallic electrodes and two gate voltages, namely, V a and V b , are applied, respectively, in the lower arms of the two rings which are treated as two inputs of the AND gate. The system is described in the tight-binding framework and the calculations are done using the Green's function formalism. Here we numerically compute the conductance-energy and current-voltage characteristics as functions of the ring-to-electrode coupling strengths, magnetic flux and gate voltages. Our study suggests that, for a typical value of the magnetic flux φ=φ 0 /2 (φ 0 =ch/e, the elementary flux-quantum) a high output current (1) (in the logical sense) appears only if both the two inputs to the gate are high (1), while if neither or only one input to the gate is high (1), a low output current (0) results. It clearly demonstrates the AND gate behavior and this aspect may be utilized in designing an electronic logic gate.

Quantum logic gates using Stark-shifted Raman transitions in a cavity

International Nuclear Information System (INIS)

Biswas, Asoka; Agarwal, G.S.

2004-01-01

We present a scheme to realize the basic two-qubit logic gates such as the quantum phase gate and the controlled-NOT gate using a detuned optical cavity interacting with a three-level Raman system. We discuss the role of Stark shifts, which are as important as the terms leading to the two-photon transition. The operation of the proposed logic gates involves metastable states of the atom and hence is not affected by spontaneous emission. These ideas can be extended to produce multiparticle entanglement

Respiratory gating of cardiac PET data in list-mode acquisition

International Nuclear Information System (INIS)

Livieratos, Lefteris; Rajappan, Kim; Camici, Paolo G.; Stegger, Lars; Schafers, Klaus; Bailey, Dale L.

2006-01-01

Respiratory motion has been identified as a source of artefacts in most medical imaging modalities. This paper reports on respiratory gating as a means to eliminate motion-related inaccuracies in PET imaging. Respiratory gating was implemented in list mode with physiological signal recorded every millisecond together with the PET data. Respiration was monitored with an inductive respiration monitor using an elasticised belt around the patient's chest. Simultaneous ECG gating can be maintained independently by encoding ECG trigger signal into the list-mode data. Respiratory gating is performed in an off-line workstation with gating parameters defined retrospectively. The technique was applied on a preliminary set of patient data with C 15 O. Motion was visually observed in the cine displays of the sagittal and coronal views of the reconstructed respiratory gated images. Significant changes in the cranial-caudal position of the heart could be observed. The centroid of the cardiac blood pool showed an excursion of 4.5-16.5 mm (mean 8.5±4.8 mm) in the cranial-caudal direction, with more limited excursion of 1.1-7.0 mm (mean 2.5±2.2 mm) in the horizontal direction and 1.3-3.7 mm (mean 2.4±0.9 mm) in the vertical direction. These preliminary data show that the extent of motion involved in respiration is comparable to myocardial wall thickness, and respiratory gating may be considered in order to reduce this effect in the reconstructed images. (orig.)

Respiratory gating of cardiac PET data in list-mode acquisition.

Science.gov (United States)

Livieratos, Lefteris; Rajappan, Kim; Stegger, Lars; Schafers, Klaus; Bailey, Dale L; Camici, Paolo G

2006-05-01

Respiratory motion has been identified as a source of artefacts in most medical imaging modalities. This paper reports on respiratory gating as a means to eliminate motion-related inaccuracies in PET imaging. Respiratory gating was implemented in list mode with physiological signal recorded every millisecond together with the PET data. Respiration was monitored with an inductive respiration monitor using an elasticised belt around the patient's chest. Simultaneous ECG gating can be maintained independently by encoding ECG trigger signal into the list-mode data. Respiratory gating is performed in an off-line workstation with gating parameters defined retrospectively. The technique was applied on a preliminary set of patient data with C(15)O. Motion was visually observed in the cine displays of the sagittal and coronal views of the reconstructed respiratory gated images. Significant changes in the cranial-caudal position of the heart could be observed. The centroid of the cardiac blood pool showed an excursion of 4.5-16.5 mm (mean 8.5+/-4.8 mm) in the cranial-caudal direction, with more limited excursion of 1.1-7.0 mm (mean 2.5+/-2.2 mm) in the horizontal direction and 1.3-3.7 mm (mean 2.4+/-0.9 mm) in the vertical direction. These preliminary data show that the extent of motion involved in respiration is comparable to myocardial wall thickness, and respiratory gating may be considered in order to reduce this effect in the reconstructed images.

Gated Treatment Delivery Verification With On-Line Megavoltage Fluoroscopy

International Nuclear Information System (INIS)

Tai An; Christensen, James D.; Gore, Elizabeth; Khamene, Ali; Boettger, Thomas; Li, X. Allen

2010-01-01

Purpose: To develop and clinically demonstrate the use of on-line real-time megavoltage (MV) fluoroscopy for gated treatment delivery verification. Methods and Materials: Megavoltage fluoroscopy (MVF) image sequences were acquired using a flat panel equipped for MV cone-beam CT in synchrony with the respiratory signal obtained from the Anzai gating device. The MVF images can be obtained immediately before or during gated treatment delivery. A prototype software tool (named RTReg4D) was developed to register MVF images with phase-sequenced digitally reconstructed radiograph images generated from the treatment planning system based on four-dimensional CT. The image registration can be used to reposition the patient before or during treatment delivery. To demonstrate the reliability and clinical usefulness, the system was first tested using a thoracic phantom and then prospectively in actual patient treatments under an institutional review board-approved protocol. Results: The quality of the MVF images for lung tumors is adequate for image registration with phase-sequenced digitally reconstructed radiographs. The MVF was found to be useful for monitoring inter- and intrafractional variations of tumor positions. With the planning target volume contour displayed on the MVF images, the system can verify whether the moving target stays within the planning target volume margin during gated delivery. Conclusions: The use of MVF images was found to be clinically effective in detecting discrepancies in tumor location before and during respiration-gated treatment delivery. The tools and process developed can be useful for gated treatment delivery verification.

Dosimetry applications in GATE Monte Carlo toolkit.

Science.gov (United States)

Papadimitroulas, Panagiotis

2017-09-01

Monte Carlo (MC) simulations are a well-established method for studying physical processes in medical physics. The purpose of this review is to present GATE dosimetry applications on diagnostic and therapeutic simulated protocols. There is a significant need for accurate quantification of the absorbed dose in several specific applications such as preclinical and pediatric studies. GATE is an open-source MC toolkit for simulating imaging, radiotherapy (RT) and dosimetry applications in a user-friendly environment, which is well validated and widely accepted by the scientific community. In RT applications, during treatment planning, it is essential to accurately assess the deposited energy and the absorbed dose per tissue/organ of interest, as well as the local statistical uncertainty. Several types of realistic dosimetric applications are described including: molecular imaging, radio-immunotherapy, radiotherapy and brachytherapy. GATE has been efficiently used in several applications, such as Dose Point Kernels, S-values, Brachytherapy parameters, and has been compared against various MC codes which are considered as standard tools for decades. Furthermore, the presented studies show reliable modeling of particle beams when comparing experimental with simulated data. Examples of different dosimetric protocols are reported for individualized dosimetry and simulations combining imaging and therapy dose monitoring, with the use of modern computational phantoms. Personalization of medical protocols can be achieved by combining GATE MC simulations with anthropomorphic computational models and clinical anatomical data. This is a review study, covering several dosimetric applications of GATE, and the different tools used for modeling realistic clinical acquisitions with accurate dose assessment. Copyright © 2017 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Design of High Quality Chemical XOR Gates with Noise Reduction.

Science.gov (United States)

Wood, Mackenna L; Domanskyi, Sergii; Privman, Vladimir

2017-07-05

We describe a chemical XOR gate design that realizes gate-response function with filtering properties. Such gate-response function is flat (has small gradients) at and in the vicinity of all the four binary-input logic points, resulting in analog noise suppression. The gate functioning involves cross-reaction of the inputs represented by pairs of chemicals to produce a practically zero output when both are present and nearly equal. This cross-reaction processing step is also designed to result in filtering at low output intensities by canceling out the inputs if one of the latter has low intensity compared with the other. The remaining inputs, which were not reacted away, are processed to produce the output XOR signal by chemical steps that result in filtering at large output signal intensities. We analyze the tradeoff resulting from filtering, which involves loss of signal intensity. We also discuss practical aspects of realizations of such XOR gates. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Four-frame gated optical imager with 120-ps resolution

International Nuclear Information System (INIS)

Young, P.E.; Hares, J.D.; Kilkenny, J.D.; Phillion, D.W.; Campbell, E.M.

1988-04-01

In this paper we describe the operation and applications of a framing camera capable of four separate two-dimensional images with each frame having a 120-ps gate width. Fast gating of a single frame is accomplished by using a wafer image intensifier tube in which the cathode is capacitively coupled to an external electrode placed outside of the photocathode of the tube. This electrode is then pulsed relative to the microchannel plate by a narrow (120 ps), high-voltage pulse. Multiple frames are obtained by using multiple gated tubes which share a single bias supply and pulser with relative gate times selected by the cable lengths between the tubes and the pulser. A beamsplitter system has been constructed which produces a separate image for each tube from a single scene. Applications of the framing camera to inertial confinement fusion experiments are discussed

Phase analysis in gated blood pool tomography

International Nuclear Information System (INIS)

Nakajima, Kenichi; Bunko, Hisashi; Tada, Akira; Taki, Junichi; Nanbu, Ichiro

1984-01-01

Phase analysis of gated blood pool study has been applied to detect the site of accessory conduction pathway (ACP) in the Wolff-Parkinson-White (WPW) syndrome; however, there was a limitation to detect the precise location of ACP by phase analysis alone. In this study, we applied phase analysis to gated blood pool tomography using seven pin hole tomography (7PT) and gated emission computed tomography (GECT) in 21 patients with WPW syndrome and 3 normal subjects. In 17 patients, the sites of ACPs were confirmed by epicardial mapping and the result of the surgical division of ACP. In 7PT, the site of ACP grossly agreed to the abnormal initial phase in phase image in 5 out of 6 patients with left cardiac type. In GECT, phase images were generated in short axial, vertical and horizontal long axial sections. In 8 out of 9 patients, the site of ACP was correctly identified by phase images, and in a patient who had two ACPs, initial phase corresponded to one of the two locations. Phase analysis of gated blood pool tomography has advantages for avoiding overlap of blood pools and for estimating three-dimensional propagation of the contraction, and can be a good adjunctive method in patients with WPW syndrome. (author)

State memory in solution gated epitaxial graphene

Science.gov (United States)

Butko, A. V.; Butko, V. Y.; Lebedev, S. P.; Lebedev, A. A.; Davydov, V. Y.; Smirnov, A. N.; Eliseyev, I. A.; Dunaevskiy, M. S.; Kumzerov, Y. A.

2018-06-01

We studied electrical transport in transistors fabricated on a surface of high quality epitaxial graphene with density of defects as low as 5·1010 cm-2 and observed quasistatic hysteresis with a time constant in a scale of hours. This constant is in a few orders of magnitude greater than the constant previously reported in CVD graphene. The hysteresis observed here can be described as a shift of ∼+2V of the Dirac point measured during a gate voltage increase from the position of the Dirac point measured during a gate voltage decrease. This hysteresis can be characterized as a nonvolatile quasistatic state memory effect in which the state of the gated graphene is determined by its initial state prior to entering the hysteretic region. Due to this effect the difference in resistance of the gated graphene measured in the hysteretic region at the same applied voltages can be as high as 70%. The observed effect can be explained by assuming that charge carriers in graphene and oppositely charged molecular ions from the solution form quasistable interfacial complexes at the graphene interface. These complexes likely preserve the initial state by preventing charge carriers in graphene from discharging in the hysteretic region.

Gating based on internal/external signals with dynamic correlation updates

International Nuclear Information System (INIS)

Wu Huanmei; Zhao Qingya; Berbeco, Ross I; Nishioka, Seiko; Shirato, Hiroki; Jiang, Steve B

2008-01-01

Precise localization of mobile tumor positions in real time is critical to the success of gated radiotherapy. Tumor positions are usually derived from either internal or external surrogates. Fluoroscopic gating based on internal surrogates, such as implanted fiducial markers, is accurate however requiring a large amount of imaging dose. Gating based on external surrogates, such as patient abdominal surface motion, is non-invasive however less accurate due to the uncertainty in the correlation between tumor location and external surrogates. To address these complications, we propose to investigate an approach based on hybrid gating with dynamic internal/external correlation updates. In this approach, the external signal is acquired at high frequency (such as 30 Hz) while the internal signal is sparsely acquired (such as 0.5 Hz or less). The internal signal is used to validate and update the internal/external correlation during treatment. Tumor positions are derived from the external signal based on the newly updated correlation. Two dynamic correlation updating algorithms are introduced. One is based on the motion amplitude and the other is based on the motion phase. Nine patients with synchronized internal/external motion signals are simulated retrospectively to evaluate the effectiveness of hybrid gating. The influences of different clinical conditions on hybrid gating, such as the size of gating windows, the optimal timing for internal signal acquisition and the acquisition frequency are investigated. The results demonstrate that dynamically updating the internal/external correlation in or around the gating window will reduce false positive with relatively diminished treatment efficiency. This improvement will benefit patients with mobile tumors, especially greater for early stage lung cancers, for which the tumors are less attached or freely floating in the lung.

Gating based on internal/external signals with dynamic correlation updates

Energy Technology Data Exchange (ETDEWEB)

Wu Huanmei [Purdue School of Engineering and Technology, Indiana University School of Informatics, IUPUI, Indianapolis, IN (United States); Zhao Qingya [School of Health Sciences, Purdue University, West Lafayette, IN (United States); Berbeco, Ross I [Department of Radiation Oncology, Dana-Farber/Brigham and Womens Cancer Center and Harvard Medical School, Boston, MA (United States); Nishioka, Seiko [NTT East-Japan Sapporo Hospital, Sapporo (Japan); Shirato, Hiroki [Hokkaido University Graduate School of Medicine, Sapporo (Japan); Jiang, Steve B [Department of Radiation Oncology, School of Medicine, University of California, San Diego, CA (United States)], E-mail: hw9@iupui.edu, E-mail: sbjiang@ucsd.edu

2008-12-21

Precise localization of mobile tumor positions in real time is critical to the success of gated radiotherapy. Tumor positions are usually derived from either internal or external surrogates. Fluoroscopic gating based on internal surrogates, such as implanted fiducial markers, is accurate however requiring a large amount of imaging dose. Gating based on external surrogates, such as patient abdominal surface motion, is non-invasive however less accurate due to the uncertainty in the correlation between tumor location and external surrogates. To address these complications, we propose to investigate an approach based on hybrid gating with dynamic internal/external correlation updates. In this approach, the external signal is acquired at high frequency (such as 30 Hz) while the internal signal is sparsely acquired (such as 0.5 Hz or less). The internal signal is used to validate and update the internal/external correlation during treatment. Tumor positions are derived from the external signal based on the newly updated correlation. Two dynamic correlation updating algorithms are introduced. One is based on the motion amplitude and the other is based on the motion phase. Nine patients with synchronized internal/external motion signals are simulated retrospectively to evaluate the effectiveness of hybrid gating. The influences of different clinical conditions on hybrid gating, such as the size of gating windows, the optimal timing for internal signal acquisition and the acquisition frequency are investigated. The results demonstrate that dynamically updating the internal/external correlation in or around the gating window will reduce false positive with relatively diminished treatment efficiency. This improvement will benefit patients with mobile tumors, especially greater for early stage lung cancers, for which the tumors are less attached or freely floating in the lung.

Imperfect linear-optical photonic gates with number-resolving photodetection

International Nuclear Information System (INIS)

Smith, A. Matthew; Uskov, D. B.; Ying, L. H.; Kaplan, L.

2011-01-01

We use the numerical optimization techniques of Uskov et al.[Phys. Rev. A 81, 012303 (2010)] to investigate the behavior of the success rates for Knill-Laflamme-Milburn-style [Knill et al., Nature (London) 409, 46 (2001)] two- and three-qubit entangling gates. The methods are first demonstrated at perfect fidelity and then extended to imperfect gates. We find that as the perfect fidelity condition is relaxed, the maximum attainable success rates increase in a predictable fashion depending on the size of the system, and we compare that rate of increase for several gates.

Active gated imaging for automotive safety applications

Science.gov (United States)

Grauer, Yoav; Sonn, Ezri

2015-03-01

The paper presents the Active Gated Imaging System (AGIS), in relation to the automotive field. AGIS is based on a fast gated-camera equipped with a unique Gated-CMOS sensor, and a pulsed Illuminator, synchronized in the time domain to record images of a certain range of interest which are then processed by computer vision real-time algorithms. In recent years we have learned the system parameters which are most beneficial to night-time driving in terms of; field of view, illumination profile, resolution and processing power. AGIS provides also day-time imaging with additional capabilities, which enhances computer vision safety applications. AGIS provides an excellent candidate for camera-based Advanced Driver Assistance Systems (ADAS) and the path for autonomous driving, in the future, based on its outstanding low/high light-level, harsh weather conditions capabilities and 3D potential growth capabilities.

An ASIP model with general gate opening intervals

NARCIS (Netherlands)

Boxma, O.J.; Kella, O.; Yechiali, U.

2016-01-01

We consider an asymmetric inclusion process, which can also be viewed as a model of n queues in series. Each queue has a gate behind it, which can be seen as a server. When a gate opens, all customers in the corresponding queue instantaneously move to the next queue and form a cluster with the

Online junction temperature measurement via internal gate resistance during turn-on

DEFF Research Database (Denmark)

Baker, Nick; Munk-Nielsen, Stig; Liserre, Marco

2014-01-01

A new method for junction temperature measurement of power semiconductor switches is presented. The measurement exploits the temperature dependent resistance of the temperature sensitive electrical parameter (TSEP): the internal gate resistance. This dependence can be observed during the normal...... switching transitions of an IGBT or MOSFET, and as a result the presented method uses the integral of the gate voltage during the turn-on delay. A measurement circuit can be integrated into a gate driver with no modification to converter or gate driver operation and holds significant advantages over other...

Gated listmode acquisition with the QuadHIDAC animal PET to image mouse hearts

International Nuclear Information System (INIS)

Schaefers, K.P.; Lang, N.; Stegger, L.; Schober, O.; Schaefers, M.

2006-01-01

Purpose: the aim of this study was to develop ECG and respiratory gating in combination with listmode acquisition for the quadHIDAC small-animal PET scanner. Methods: ECG and respiratory gating was realized with the help of an external trigger device (BioVET) synchronized with the listmode acquisition. Listmode data of a mouse acquisition (injected with 6.5 MBq of 18 F-FDG) were sorted according to three different gating definitions: 12 cardiac gates, 8 respiratory gates and a combination of 8 cardiac and 8 respiratory gates. Images were reconstructed with filtered back-projection (ramp filter), and parameters like left ventricular wall thickness (WT), wall-to-wall separation (WS) and blood to myocardium activity ratios (BMR) were calculated. Results: cardiac gated images show improvement of all parameters (WT 2.6 mm, WS 4.1 mm, BRM 2.3) in diastole compared to ungated images (WT 3.0 mm, WS 3.4 mm, BMR 1.3). Respiratory gating had little effect on calculated parameters. Conclusion: ECG gating with the quadHIDAC can improve myocardial image quality in mice. This could have a major impact on the calculation of an image-derived input function for kinetic modelling. (orig.)

Semiconductor optical amplifier-based all-optical gates for high-speed optical processing

DEFF Research Database (Denmark)

Stubkjær, Kristian

2000-01-01

Semiconductor optical amplifiers are useful building blocks for all-optical gates as wavelength converters and OTDM demultiplexers. The paper reviews the progress from simple gates using cross-gain modulation and four-wave mixing to the integrated interferometric gates using cross-phase modulation....... These gates are very efficient for high-speed signal processing and open up interesting new areas, such as all-optical regeneration and high-speed all-optical logic functions...

Divide and control: split design of multi-input DNA logic gates.

Science.gov (United States)

Gerasimova, Yulia V; Kolpashchikov, Dmitry M

2015-01-18

Logic gates made of DNA have received significant attention as biocompatible building blocks for molecular circuits. The majority of DNA logic gates, however, are controlled by the minimum number of inputs: one, two or three. Here we report a strategy to design a multi-input logic gate by splitting a DNA construct.

Implementation of respiratory-gated VMAT on a Versa HD linear accelerator.

Science.gov (United States)

Snyder, Jeffrey E; Flynn, Ryan T; Hyer, Daniel E

2017-09-01

The accurate delivery of respiratory-gated volumetric modulated arc therapy (VMAT) treatment plans presents a challenge since the gantry rotation and collimator leaves must be repeatedly stopped and set into motion during each breathing cycle. In this study, we present the commissioning process for an Anzai gating system (AZ-733VI) on an Elekta Versa HD linear accelerator and make recommendations for successful clinical implementation. The commissioning tests include central axis dose consistency, profile consistency, gating beam-on/off delay, and comparison of gated versus nongated gamma pass rates for patient-specific quality assurance using four clinically commissioned photon energies: 6 MV, 6 FFF, 10 MV, and 10 FFF. The central axis dose constancy between gated and nongated deliveries was within 0.6% for all energies and the analysis of open field profiles for gated and nongated deliveries showed an agreement of 97.8% or greater when evaluated with a percent difference criteria of 1%. The measurement of the beam-on/off delay was done by evaluating images of a moving ball-bearing phantom triggered by the gating system and average beam-on delays of 0.22-0.29 s were observed. No measurable beam-off delay was present. Measurements of gated VMAT dose distributions resulted in decrements as high as 9% in the gamma passing rate as compared to nongated deliveries when evaluated against the planned dose distribution at 3%/3 mm. By decreasing the dose rate, which decreases the gantry speed during gated delivery, the gamma passing rates of gated and nongated treatments can be made equivalent. We present an empirically derived formula to limit the maximum dose rate during VMAT deliveries and show that by implementing a reduced dose rate, a gamma passing rate of greater than 95% (3%/3 mm) was obtained for all plan measurements. © 2017 The Authors. Journal of Applied Clinical Medical Physics published by Wiley Periodicals, Inc. on behalf of American Association of

CMOS integration of high-k/metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits

Science.gov (United States)

Dentoni Litta, Eugenio; Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; O’Sullivan, Barry; Machkaoutsan, Vladimir; Fazan, Pierre; Ji, Yunhyuck; Mannaert, Geert; Lorant, Christophe; Sebaai, Farid; Thiam, Arame; Ercken, Monique; Demuynck, Steven; Horiguchi, Naoto

2018-04-01

Integration of high-k/metal gate stacks in peripheral transistors is a major candidate to ensure continued scaling of dynamic random access memory (DRAM) technology. In this paper, the CMOS integration of diffusion and gate replacement (D&GR) high-k/metal gate stacks is investigated, evaluating four different approaches for the critical patterning step of removing the N-type field effect transistor (NFET) effective work function (eWF) shifter stack from the P-type field effect transistor (PFET) area. The effect of plasma exposure during the patterning step is investigated in detail and found to have a strong impact on threshold voltage tunability. A CMOS integration scheme based on an experimental wet-compatible photoresist is developed and the fulfillment of the main device metrics [equivalent oxide thickness (EOT), eWF, gate leakage current density, on/off currents, short channel control] is demonstrated.

Photolithographically Patterned TiO2 Films for Electrolyte-Gated Transistors.

Science.gov (United States)

Valitova, Irina; Kumar, Prajwal; Meng, Xiang; Soavi, Francesca; Santato, Clara; Cicoira, Fabio

2016-06-15

Metal oxides constitute a class of materials whose properties cover the entire range from insulators to semiconductors to metals. Most metal oxides are abundant and accessible at moderate cost. Metal oxides are widely investigated as channel materials in transistors, including electrolyte-gated transistors, where the charge carrier density can be modulated by orders of magnitude upon application of relatively low electrical bias (2 V). Electrolyte gating offers the opportunity to envisage new applications in flexible and printed electronics as well as to improve our current understanding of fundamental processes in electronic materials, e.g. insulator/metal transitions. In this work, we employ photolithographically patterned TiO2 films as channels for electrolyte-gated transistors. TiO2 stands out for its biocompatibility and wide use in sensing, electrochromics, photovoltaics and photocatalysis. We fabricated TiO2 electrolyte-gated transistors using an original unconventional parylene-based patterning technique. By using a combination of electrochemical and charge carrier transport measurements we demonstrated that patterning improves the performance of electrolyte-gated TiO2 transistors with respect to their unpatterned counterparts. Patterned electrolyte-gated (EG) TiO2 transistors show threshold voltages of about 0.9 V, ON/OFF ratios as high as 1 × 10(5), and electron mobility above 1 cm(2)/(V s).

Fast and high-fidelity entangling gate through parametrically modulated longitudinal coupling

Directory of Open Access Journals (Sweden)

Baptiste Royer

2017-05-01

Full Text Available We investigate an approach to universal quantum computation based on the modulation of longitudinal qubit-oscillator coupling. We show how to realize a controlled-phase gate by simultaneously modulating the longitudinal coupling of two qubits to a common oscillator mode. In contrast to the more familiar transversal qubit-oscillator coupling, the magnitude of the effective qubit-qubit interaction does not rely on a small perturbative parameter. As a result, this effective interaction strength can be made large, leading to short gate times and high gate fidelities. We moreover show how the gate infidelity can be exponentially suppressed with squeezing and how the entangling gate can be generalized to qubits coupled to separate oscillators. Our proposal can be realized in multiple physical platforms for quantum computing, including superconducting and spin qubits.

Development of insulated gate bipolar transistor-based power ...

Indian Academy of Sciences (India)

[5] S V Nakhe et al, National Laser Symposium, 81–82 (2001). [6] E G Cook et al, 8th IEEE Pulsed Power Conference, June 1991. [7] L Druckmann et al, IEEE Power Modulator Symposium, 213–216 (1992). [8] Hybrid gate drivers and gate drive power supplies, M57962L datasheet from Mitsubishi. Electric Corpn. Pramana ...

Digital-circuit analysis of short-gate tunnel FETs for low-voltage applications

International Nuclear Information System (INIS)

Zhuge, Jing; Huang, Ru; Wang, Yangyuan; Verhulst, Anne S; Vandenberghe, William G; Dehaene, Wim; Groeseneken, Guido

2011-01-01

This paper investigates the potential of tunnel field-effect transistors (TFETs), with emphasis on short-gate TFETs, by simulation for low-power digital applications having a supply voltage lower than 0.5 V. A transient study shows that the tunneling current has a negligible contribution in charging and discharging the gate capacitance of TFETs. In spite of a higher resistance region in the short-gate TFET, the gate (dis)charging speed still meets low-voltage application requirements. A circuit analysis is performed on short-gate TFETs with different materials, such as Si, Ge and heterostructures in terms of voltage overshoot, delay, static power, energy consumption and energy delay product (EDP). These results are compared to MOSFET and full-gate TFET performance. It is concluded that short-gate heterostructure TFETs (Ge–source for nTFET, In 0.6 Ga 0.4 As–source for pTFET) are promising candidates to extend the supply voltage to lower than 0.5 V because they combine the advantage of a low Miller capacitance, due to the short-gate structures, and strong drive current in TFETs, due to the narrow bandgap material in the source. At a supply voltage of 0.4 V and for an EOT and channel length of 0.6 nm and 40 nm, respectively, a three-stage inverter chain based on short-gate heterostructure TFETs saves 40% energy consumption per cycle at the same delay and shows 60%–75% improvement of EDP at the same static power, compared to its full-gate counterpart. When compared to the MOSFET, better EDP can be achieved in the heterostructure TFET especially at low static power consumption

Role of respiratory-gated PET/CT for pancreatic tumors: A preliminary result

International Nuclear Information System (INIS)

Kasuya, Takeo; Tateishi, Ukihide; Suzuki, Kazufumi; Daisaki, Hiromitsu; Nishiyama, Yuji; Hata, Masaharu; Inoue, Tomio

2013-01-01

Purpose: The aim of this study is to ascertain role of respiratory-gated PET/CT for accurate diagnosis of pancreatic tumors. Materials and methods: Prior to clinical study, the phantom study was performed to evaluate the impact of respiratory motion on lesion quantification. Twenty-two patients (mean age 65 years) with pancreatic tumors were enrolled. Pathological diagnoses by surgical specimens consisted of pancreatic cancer (n = 15) and benign intraductal papillary mucinous neoplasm (IPMN, n = 7). Whole-body scan of non-respiratory-gated PET/CT was performed at first, and subsequent respiratory-gated PET/CT for one bed position was performed. All PET/CT studies were performed prior to surgery. The SUV max obtained by non-respiratory-gated PET/CT and respiratory-gated PET/CT, and percent difference in SUVmax (%SUVmax) were compared. Results: The profile curve of 5 respiratory bin image was most similar to that of static image. The third bin of 5 respiratory bin image showed highest FWHM (24.0 mm) and FWTM (32.7 mm). The mean SUVmax of pancreatic cancer was similar to that of benign IPMN on non-respiratory-gated PET/CT (p = 0.05), whereas significant difference was found between two groups on respiratory-gated PET/CT (p = 0.016). The mean %SUV of pancreatic cancer was greater than that of benign IPMN (p < 0.0001). Identification of the primary tumor in pancreatic head (n = 13, 59%) was improved by using respiratory-gated PET/CT because of minimal affection of physiological accumulation in duodenum. Conclusion: Respiratory-gated PET/CT is a feasible technique for evaluation of pancreatic tumors and allows more accurate identification of pancreatic tumors compared with non-respiratory-gated PET/CT

A chimeric prokaryotic pentameric ligand–gated channel reveals distinct pathways of activation

Science.gov (United States)

Schmandt, Nicolaus; Velisetty, Phanindra; Chalamalasetti, Sreevatsa V.; Stein, Richard A.; Bonner, Ross; Talley, Lauren; Parker, Mark D.; Mchaourab, Hassane S.; Yee, Vivien C.; Lodowski, David T.

2015-01-01

Recent high resolution structures of several pentameric ligand–gated ion channels have provided unprecedented details of their molecular architecture. However, the conformational dynamics and structural rearrangements that underlie gating and allosteric modulation remain poorly understood. We used a combination of electrophysiology, double electron–electron resonance (DEER) spectroscopy, and x-ray crystallography to investigate activation mechanisms in a novel functional chimera with the extracellular domain (ECD) of amine-gated Erwinia chrysanthemi ligand–gated ion channel, which is activated by primary amines, and the transmembrane domain of Gloeobacter violaceus ligand–gated ion channel, which is activated by protons. We found that the chimera was independently gated by primary amines and by protons. The crystal structure of the chimera in its resting state, at pH 7.0 and in the absence of primary amines, revealed a closed-pore conformation and an ECD that is twisted with respect to the transmembrane region. Amine- and pH-induced conformational changes measured by DEER spectroscopy showed that the chimera exhibits a dual mode of gating that preserves the distinct conformational changes of the parent channels. Collectively, our findings shed light on both conserved and divergent features of gating mechanisms in this class of channels, and will facilitate the design of better allosteric modulators. PMID:26415570

Stability of Quantum Loops and Exchange Operations in the Construction of Quantum Computation Gates

International Nuclear Information System (INIS)

Bermúdez, D; Delgado, F

2017-01-01

Quantum information and quantum computation is a rapidly emergent field where quantum systems and their applications play a central role. In the gate version of quantum computation, the construction of universal quantum gates to manipulate quantum information is currently an intensive arena for quantum engineering. Specific properties of systems should be able to reproduce such idealized gates imitating the classically inspired computational gates. Recently, for magnetic systems driven by the bipartite Heisenberg-Ising model a universal set of gates has been realized, an alternative easy design for the Boykin set but using the Bell states as grammar. Exact control can be then used to construct specific prescriptions to achieve those gates. Physical parameters impose a challenge in the gate control. This work analyzes, based on the worst case quantum fidelity, the associated instability for the proposed set of gates. An strong performance is found in those gates for the most of quantum states involved. (paper)

SU-C-204-06: Surface Imaging for the Set-Up of Proton Post-Mastectomy Chestwall Irradiation: Gated Images Vs Non Gated Images

Energy Technology Data Exchange (ETDEWEB)

Batin, E; Depauw, N; MacDonald, S; Lu, H [Massachusetts General Hospital, Boston, MA (United States)

2015-06-15

Purpose: Historically, the set-up for proton post-mastectomy chestwall irradiation at our institution started with positioning the patient using tattoos and lasers. One or more rounds of orthogonal X-rays at gantry 0° and beamline X-ray at treatment gantry angle were then taken to finalize the set-up position. As chestwall targets are shallow and superficial, surface imaging is a promising tool for set-up and needs to be investigated Methods: The orthogonal imaging was entirely replaced by AlignRT™ (ART) images. The beamline X-Ray image is kept as a confirmation, based primarily on three opaque markers placed on skin surface instead of bony anatomy. In the first phase of the process, ART gated images were used to set-up the patient and the same specific point of the breathing curve was used every day. The moves (translations and rotations) computed for each point of the breathing curve during the first five fractions were analyzed for ten patients. During a second phase of the study, ART gated images were replaced by ART non-gated images combined with real-time monitoring. In both cases, ART images were acquired just before treatment to access the patient position compare to the non-gated CT. Results: The average difference between the maximum move and the minimum move depending on the chosen breathing curve point was less than 1.7 mm for all translations and less than 0.7° for all rotations. The average position discrepancy over the course of treatment obtained by ART non gated images combined to real-time monitoring taken before treatment to the planning CT were smaller than the average position discrepancy obtained using ART gated images. The X-Ray validation images show similar results with both ART imaging process. Conclusion: The use of ART non gated images combined with real time imaging allows positioning post-mastectomy chestwall patients in less than 3 mm / 1°.

SU-C-204-06: Surface Imaging for the Set-Up of Proton Post-Mastectomy Chestwall Irradiation: Gated Images Vs Non Gated Images

International Nuclear Information System (INIS)

Batin, E; Depauw, N; MacDonald, S; Lu, H

2015-01-01

Purpose: Historically, the set-up for proton post-mastectomy chestwall irradiation at our institution started with positioning the patient using tattoos and lasers. One or more rounds of orthogonal X-rays at gantry 0° and beamline X-ray at treatment gantry angle were then taken to finalize the set-up position. As chestwall targets are shallow and superficial, surface imaging is a promising tool for set-up and needs to be investigated Methods: The orthogonal imaging was entirely replaced by AlignRT™ (ART) images. The beamline X-Ray image is kept as a confirmation, based primarily on three opaque markers placed on skin surface instead of bony anatomy. In the first phase of the process, ART gated images were used to set-up the patient and the same specific point of the breathing curve was used every day. The moves (translations and rotations) computed for each point of the breathing curve during the first five fractions were analyzed for ten patients. During a second phase of the study, ART gated images were replaced by ART non-gated images combined with real-time monitoring. In both cases, ART images were acquired just before treatment to access the patient position compare to the non-gated CT. Results: The average difference between the maximum move and the minimum move depending on the chosen breathing curve point was less than 1.7 mm for all translations and less than 0.7° for all rotations. The average position discrepancy over the course of treatment obtained by ART non gated images combined to real-time monitoring taken before treatment to the planning CT were smaller than the average position discrepancy obtained using ART gated images. The X-Ray validation images show similar results with both ART imaging process. Conclusion: The use of ART non gated images combined with real time imaging allows positioning post-mastectomy chestwall patients in less than 3 mm / 1°

Diagnosis of accessory conduction pathway using ECG-gated emission CT analysis

International Nuclear Information System (INIS)

Misaki, Takuro; Mukai, Keiichi; Tsubota, Makoto; Iwa, Takashi; Nakajima, Ken-ichi; Hisada, Kin-ichi

1987-01-01

Pinpointing the location of accessory conduction pathway (ACP) is of great importance in the surgical treatment for Wolff-Parkinson-White (WPW) syndrome. For this purpose, this study explored the usefulness of ECG-gated emission computed tomography (Gated-ECT) in 30 patients who preoperatively underwent Gated-ECT. The site of earliest contraction at level of atrioventicular valves, obtained on tomographic phase analysis, was compared with the site of earliest activation, obtained on epicardial mapping during surgery. The concordance rate of the two methods was 94 % (28/30). Among them, one patient was found to have the association of corrected transposition of great arteries on Gated-ECT. Gated-ECT was, however, of limited value in differentiating right posterior ACP from right postseptal ACP. The discordance between the sites of earliest contraction and activation, which was observed in the two others, was likely due to decreased wall motion resulting from myocardial disturbance. Gated-ECT may have a diagnostic potential for the location of ACP, especially in view of providing images that corresponded to the surgical anatomy. (Namekawa, K.)

Multibit C_kNOT quantum gates via Rydberg blockade

DEFF Research Database (Denmark)

Isenhower, L.; Saffman, Mark; Mølmer, Klaus

2011-01-01

Long range Rydberg blockade interactions have the potential for efficient implementation of quantum gates between multiple atoms. Here we present and analyze a protocol for implementation of a k-atom controlled NOT (CkNOT) neutral atom gate. This gate can be implemented using sequential or simult......Long range Rydberg blockade interactions have the potential for efficient implementation of quantum gates between multiple atoms. Here we present and analyze a protocol for implementation of a k-atom controlled NOT (CkNOT) neutral atom gate. This gate can be implemented using sequential...... or simultaneous addressing of the control atoms which requires only 2k + 3 or 5 Rydberg π pulses respectively. A detailed error analysis relevant for implementations based on alkali atom Rydberg states is provided which shows that gate errors less than 10% are possible for k = 35....

Comparison of the effects of TripleGates and Gates-Glidden burs on cervical dentin thickness and root canal area by using cone beam computed tomography

Directory of Open Access Journals (Sweden)

Kássio SOUSA

2015-04-01

Full Text Available The search for new instruments to promote an appropriate cervical preparation has led to the development of new rotary instruments such as TripleGates. However, to the best of the authors' knowledge, there is no study evaluating TripleGates effect on the “risk zone” of mandibular molars. Objectives : The aim of this study was to evaluate the effects of a crown-down sequence of Gates-Glidden and TripleGates burs on the remaining cervical dentin thickness and the total amount of dentin removed from the root canals during the instrumentation by using cone beam computed tomography. The number of separated instruments was also evaluated. Material and Methods : Mesial roots of 40 mandibular first molars were divided into 2 equal groups: crown-down sequence of Gates-Glidden (#3, #2, #1 and TripleGates burs. Cervical dentin thickness and canal area were measured before and after instrumentation by using cone beam computed tomography and image analysis software. Student’s t-test was used to determine significant differences at p0.05 were observed between the instruments, regarding the root canal area and dentin wall thickness. Conclusion : Both tested instruments used for cervical preparation were safe to be used in the mesial root canal of mandibular molars.

3D modeling of dual-gate FinFET.

Science.gov (United States)

Mil'shtein, Samson; Devarakonda, Lalitha; Zanchi, Brian; Palma, John

2012-11-13

The tendency to have better control of the flow of electrons in a channel of field-effect transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field plates in a variety of metal semiconductor field-effect transistors and high electron mobility transistors, and finally a gate wrapping around three sides of a narrow fin-shaped channel in a FinFET. With the enhanced control, performance trends of all FETs are still challenged by carrier mobility dependence on the strengths of the electrical field along the channel. However, in cases when the ratio of FinFET volume to its surface dramatically decreases, one should carefully consider the surface boundary conditions of the device. Moreover, the inherent non-planar nature of a FinFET demands 3D modeling for accurate analysis of the device performance. Using the Silvaco modeling tool with quantization effects, we modeled a physical FinFET described in the work of Hisamoto et al. (IEEE Tran. Elec. Devices 47:12, 2000) in 3D. We compared it with a 2D model of the same device. We demonstrated that 3D modeling produces more accurate results. As 3D modeling results came close to experimental measurements, we made the next step of the study by designing a dual-gate FinFET biased at Vg1 >Vg2. It is shown that the dual-gate FinFET carries higher transconductance than the single-gate device.

Simulation of 50-nm Gate Graphene Nanoribbon Transistors

Directory of Open Access Journals (Sweden)

Cedric Nanmeni Bondja

2016-01-01

Full Text Available An approach to simulate the steady-state and small-signal behavior of GNR MOSFETs (graphene nanoribbon metal-semiconductor-oxide field-effect transistor is presented. GNR material parameters and a method to account for the density of states of one-dimensional systems like GNRs are implemented in a commercial device simulator. This modified tool is used to calculate the current-voltage characteristics as well the cutoff frequency fT and the maximum frequency of oscillation fmax of GNR MOSFETs. Exemplarily, we consider 50-nm gate GNR MOSFETs with N = 7 armchair GNR channels and examine two transistor configurations. The first configuration is a simplified MOSFET structure with a single GNR channel as usually studied by other groups. Furthermore, and for the first time in the literature, we study in detail a transistor structure with multiple parallel GNR channels and interribbon gates. It is shown that the calculated fT of GNR MOSFETs is significantly lower than that of GFETs (FET with gapless large-area graphene channel with comparable gate length due to the mobility degradation in GNRs. On the other hand, GNR MOSFETs show much higher fmax compared to experimental GFETs due the semiconducting nature of the GNR channels and the resulting better saturation of the drain current. Finally, it is shown that the gate control in FETs with multiple parallel GNR channels is improved while the cutoff frequency is degraded compared to single-channel GNR MOSFETs due to parasitic capacitances of the interribbon gates.

Cluster computing software for GATE simulations

International Nuclear Information System (INIS)

Beenhouwer, Jan de; Staelens, Steven; Kruecker, Dirk; Ferrer, Ludovic; D'Asseler, Yves; Lemahieu, Ignace; Rannou, Fernando R.

2007-01-01

Geometry and tracking (GEANT4) is a Monte Carlo package designed for high energy physics experiments. It is used as the basis layer for Monte Carlo simulations of nuclear medicine acquisition systems in GEANT4 Application for Tomographic Emission (GATE). GATE allows the user to realistically model experiments using accurate physics models and time synchronization for detector movement through a script language contained in a macro file. The downside of this high accuracy is long computation time. This paper describes a platform independent computing approach for running GATE simulations on a cluster of computers in order to reduce the overall simulation time. Our software automatically creates fully resolved, nonparametrized macros accompanied with an on-the-fly generated cluster specific submit file used to launch the simulations. The scalability of GATE simulations on a cluster is investigated for two imaging modalities, positron emission tomography (PET) and single photon emission computed tomography (SPECT). Due to a higher sensitivity, PET simulations are characterized by relatively high data output rates that create rather large output files. SPECT simulations, on the other hand, have lower data output rates but require a long collimator setup time. Both of these characteristics hamper scalability as a function of the number of CPUs. The scalability of PET simulations is improved here by the development of a fast output merger. The scalability of SPECT simulations is improved by greatly reducing the collimator setup time. Accordingly, these two new developments result in higher scalability for both PET and SPECT simulations and reduce the computation time to more practical values

A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor

International Nuclear Information System (INIS)

Cui Lei; Wang Quan; Wang Xiao-Liang; Xiao Hong-Ling; Wang Cui-Mei; Jiang Li-Juan; Feng Chun; Yin Hai-Bo; Gong Jia-Min; Li Bai-Quan; Wang Zhan-Guo

2015-01-01

A novel multi-finger gate high electron mobility transistor (HEMT) is designed to reduce the peak electric field value at the drain-side gate edge when the device is at off-state. The effective gate length (L_e_f_f) of the multi-finger gate device is smaller than that of the field plate gate device. In this work, field plate gate, five-finger gate and ten-finger gate devices are simulated. The results of the simulation indicate that the multi-finger gate device has a lower peak value than the device with the gate field plate. Moreover, this value would be further reduced when the number of gate fingers is increased. In addition, it has the potential to make the HEMT work in a higher frequency since it has a lower effective length of gate. (paper)

Low-voltage high-speed programming gate-all-around floating gate memory cell with tunnel barrier engineering

Science.gov (United States)

Hamzah, Afiq; Ezaila Alias, N.; Ismail, Razali

2018-06-01

The aim of this study is to investigate the memory performances of gate-all-around floating gate (GAA-FG) memory cell implementing engineered tunnel barrier concept of variable oxide thickness (VARIOT) of low-k/high-k for several high-k (i.e., Si3N4, Al2O3, HfO2, and ZrO2) with low-k SiO2 using three-dimensional (3D) simulator Silvaco ATLAS. The simulation work is conducted by initially determining the optimized thickness of low-k/high-k barrier-stacked and extracting their Fowler–Nordheim (FN) coefficients. Based on the optimized parameters the device performances of GAA-FG for fast program operation and data retention are assessed using benchmark set by 6 and 8 nm SiO2 tunnel layer respectively. The programming speed has been improved and wide memory window with 30% increment from conventional SiO2 has been obtained using SiO2/Al2O3 tunnel layer due to its thin low-k dielectric thickness. Furthermore, given its high band edges only 1% of charge-loss is expected after 10 years of ‑3.6/3.6 V gate stress.

Prospective respiratory-gated micro-CT of free breathing rodents

International Nuclear Information System (INIS)

Ford, Nancy L.; Nikolov, Hristo N.; Norley, Chris J.D.; Thornton, Michael M.; Foster, Paula J.; Drangova, Maria; Holdsworth, David W.

2005-01-01

Microcomputed tomography (Micro-CT) has the potential to noninvasively image the structure of organs in rodent models with high spatial resolution and relatively short image acquisition times. However, motion artifacts associated with the normal respiratory motion of the animal may arise when imaging the abdomen or thorax. To reduce these artifacts and the accompanying loss of spatial resolution, we propose a prospective respiratory gating technique for use with anaesthetized, free-breathing rodents. A custom-made bed with an embedded pressure chamber was connected to a pressure transducer. Anaesthetized animals were placed in the prone position on the bed with their abdomens located over the chamber. During inspiration, the motion of the diaphragm caused an increase in the chamber pressure, which was converted into a voltage signal by the transducer. An output voltage was used to trigger image acquisition at any desired time point in the respiratory cycle. Digital radiographic images were acquired of anaesthetized, free-breathing rats with a digital radiographic system to correlate the respiratory wave form with respiration-induced organ motion. The respiratory wave form was monitored and recorded simultaneously with the x-ray radiation pulses, and an imaging window was defined, beginning at end expiration. Phantom experiments were performed to verify that the respiratory gating apparatus was triggering the micro-CT system. Attached to the distensible phantom were 100 μm diameter copper wires and the measured full width at half maximum was used to assess differences in image quality between respiratory-gated and ungated imaging protocols. This experiment allowed us to quantify the improvement in the spatial resolution, and the reduction of motion artifacts caused by moving structures, in the images resulting from respiratory-gated image acquisitions. The measured wire diameters were 0.135 mm for the stationary phantom image, 0.137 mm for the image gated at end

Nanogranular SiO{sub 2} proton gated silicon layer transistor mimicking biological synapses

Energy Technology Data Exchange (ETDEWEB)

Liu, M. J.; Huang, G. S., E-mail: gshuang@fudan.edu.cn, E-mail: pfeng@nju.edu.cn; Guo, Q. L.; Tian, Z. A.; Li, G. J.; Mei, Y. F. [Department of Materials Science, Fudan University, Shanghai 200433 (China); Feng, P., E-mail: gshuang@fudan.edu.cn, E-mail: pfeng@nju.edu.cn; Shao, F.; Wan, Q. [School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China)

2016-06-20

Silicon on insulator (SOI)-based transistors gated by nanogranular SiO{sub 2} proton conducting electrolytes were fabricated to mimic synapse behaviors. This SOI-based device has both top proton gate and bottom buried oxide gate. Electrical transfer properties of top proton gate show hysteresis curves different from those of bottom gate, and therefore, excitatory post-synaptic current and paired pulse facilitation (PPF) behavior of biological synapses are mimicked. Moreover, we noticed that PPF index can be effectively tuned by the spike interval applied on the top proton gate. Synaptic behaviors and functions, like short-term memory, and its properties are also experimentally demonstrated in our device. Such SOI-based electronic synapses are promising for building neuromorphic systems.

ZIF-8 gate tuning via terminal group modification: a computational study

KAUST Repository

Zheng, Bin

2016-06-24

Tuning the pore structure of zeolitic imidazolate frameworks (ZIFs) enables unique control of their material properties. In this work, we used computational methods to examine the gate structure of ZIF-8 tuned by substitution terminal groups. The substitution position and electron affinity of the added groups were shown to be key factors in gate size. Electrostatic interactions are responsible for the variation in gate opening. These results suggest that the post-modification of terminal group in ZIFs can be used to finely tune the pore gate, opening up new strategies in the design of ZIFs with desired properties.

Remote controlled gate controller using a GSM network and Arduino platform

Directory of Open Access Journals (Sweden)

Pospisilik Martin

2016-01-01

Full Text Available Most remote controllers for entrance gates operate on free frequencies 433 or 868 MHz. However, this technology limits the user comfort, as it is usually not common that bi-directional communication is established. A higher comfort of controlling the entrance gates can be achieved by employing the GSM network for transmission of commands and messages between the gate controller and the user. In this case, only a conventional GSM cellular phone is needed to control the gate. A description of such a controller based on the GSM module and Arduino controller is provided in this paper.

Integrated-optics heralded controlled-NOT gate for polarization-encoded qubits

Science.gov (United States)

Zeuner, Jonas; Sharma, Aditya N.; Tillmann, Max; Heilmann, René; Gräfe, Markus; Moqanaki, Amir; Szameit, Alexander; Walther, Philip

2018-03-01

Recent progress in integrated-optics technology has made photonics a promising platform for quantum networks and quantum computation protocols. Integrated optical circuits are characterized by small device footprints and unrivalled intrinsic interferometric stability. Here, we take advantage of femtosecond-laser-written waveguides' ability to process polarization-encoded qubits and present an implementation of a heralded controlled-NOT gate on chip. We evaluate the gate performance in the computational basis and a superposition basis, showing that the gate can create polarization entanglement between two photons. Transmission through the integrated device is optimized using thermally expanded core fibers and adiabatically reduced mode-field diameters at the waveguide facets. This demonstration underlines the feasibility of integrated quantum gates for all-optical quantum networks and quantum repeaters.

The Aharonov-Bohm effect in a side-gated graphene ring

International Nuclear Information System (INIS)

Huefner, Magdalena; Molitor, Francoise; Jacobsen, Arnhild; Pioda, Alessandro; Stampfer, Christoph; Ensslin, Klaus; Ihn, Thomas

2010-01-01

We investigate the magnetoresistance of a side-gated ring structure etched out of single-layer graphene. We observe Aharonov-Bohm oscillations with about 5% visibility. We are able to change the relative phases of the wave functions in the interfering paths and induce phase jumps of π in the Aharonov-Bohm oscillations by changing the voltage applied to the side gate or the back gate. The observed data can be interpreted within existing models for 'dirty metals'.

A Grand Challenge for CMOS Scaling: Alternate Gate Dielectrics

Science.gov (United States)

Wallace, Robert M.

2001-03-01

Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.13 um complementary metal oxide semiconductor (CMOS) technology. The prospect of replacing SiO2 is a formidable task because the alternate gate dielectric must provide many properties that are, at a minimum, comparable to those of SiO2 yet with a much higher permittivity. A systematic examination of the required performance of gate dielectrics suggests that the key properties to consider in the selection an alternative gate dielectric candidate are (a) permittivity, band gap and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. We will review the performance requirements for materials associated with CMOS scaling, the challenges associated with these requirements, and the state-of-the-art in current research for alternate gate dielectrics. The requirements for process integration compatibility are remarkably demanding, and any serious candidates will emerge only through continued, intensive investigation.

Dosimetric evaluation of the interplay effect in respiratory-gated RapidArc radiation therapy

International Nuclear Information System (INIS)

Riley, Craig; Yang, Yong; Li, Tianfang; Zhang, Yongqian; Heron, Dwight E.; Huq, M. Saiful

2014-01-01

Purpose: Volumetric modulated arc therapy (VMAT) with gating capability has had increasing adoption in many clinics in the United States. In this new technique, dose rate, gantry rotation speed, and the leaf motion speed of multileaf collimators (MLCs) are modulated dynamically during gated beam delivery to achieve highly conformal dose coverage of the target and normal tissue sparing. Compared with the traditional gated intensity-modulated radiation therapy technique, this complicated beam delivery technique may result in larger dose errors due to the intrafraction tumor motion. The purpose of this work is to evaluate the dosimetric influence of the interplay effect for the respiration-gated VMAT technique (RapidArc, Varian Medical Systems, Palo Alto, CA). Our work consisted of two parts: (1) Investigate the interplay effect for different target residual errors during gated RapidArc delivery using a one-dimensional moving phantom capable of producing stable sinusoidal movement; (2) Evaluate the dosimetric influence in ten clinical patients’ treatment plans using a moving phantom driven with a patient-specific respiratory curve. Methods: For the first part of this study, four plans were created with a spherical target for varying residual motion of 0.25, 0.5, 0.75, and 1.0 cm. Appropriate gating windows were applied for each. The dosimetric effect was evaluated using EDR2 film by comparing the gated delivery with static delivery. For the second part of the project, ten gated lung stereotactic body radiotherapy cases were selected and reoptimized to be delivered by the gated RapidArc technique. These plans were delivered to a phantom, and again the gated treatments were compared to static deliveries by the same methods. Results: For regular sinusoidal motion, the dose delivered to the target was not substantially affected by the gating windows when evaluated with the gamma statistics, suggesting the interplay effect has a small role in respiratory-gated Rapid

Dosimetric evaluation of the interplay effect in respiratory-gated RapidArc radiation therapy.

Science.gov (United States)

Riley, Craig; Yang, Yong; Li, Tianfang; Zhang, Yongqian; Heron, Dwight E; Huq, M Saiful

2014-01-01

Volumetric modulated arc therapy (VMAT) with gating capability has had increasing adoption in many clinics in the United States. In this new technique, dose rate, gantry rotation speed, and the leaf motion speed of multileaf collimators (MLCs) are modulated dynamically during gated beam delivery to achieve highly conformal dose coverage of the target and normal tissue sparing. Compared with the traditional gated intensity-modulated radiation therapy technique, this complicated beam delivery technique may result in larger dose errors due to the intrafraction tumor motion. The purpose of this work is to evaluate the dosimetric influence of the interplay effect for the respiration-gated VMAT technique (RapidArc, Varian Medical Systems, Palo Alto, CA). Our work consisted of two parts: (1) Investigate the interplay effect for different target residual errors during gated RapidArc delivery using a one-dimensional moving phantom capable of producing stable sinusoidal movement; (2) Evaluate the dosimetric influence in ten clinical patients' treatment plans using a moving phantom driven with a patient-specific respiratory curve. For the first part of this study, four plans were created with a spherical target for varying residual motion of 0.25, 0.5, 0.75, and 1.0 cm. Appropriate gating windows were applied for each. The dosimetric effect was evaluated using EDR2 film by comparing the gated delivery with static delivery. For the second part of the project, ten gated lung stereotactic body radiotherapy cases were selected and reoptimized to be delivered by the gated RapidArc technique. These plans were delivered to a phantom, and again the gated treatments were compared to static deliveries by the same methods. For regular sinusoidal motion, the dose delivered to the target was not substantially affected by the gating windows when evaluated with the gamma statistics, suggesting the interplay effect has a small role in respiratory-gated RapidArc therapy. Varied results were

A probabilistic CNOT gate for coherent state qubits

International Nuclear Information System (INIS)

Oliveira, M.S.R.; Vasconcelos, H.M.; Silva, J.B.R.

2013-01-01

We propose a scheme for implementing a probabilistic controlled-NOT (CNOT) gate for coherent state qubits using only linear optics and a particular four-mode state. The proposed optical setup works, as a CNOT gate, near-faithful when |α| 2 ⩾25 and independent of the input state. The key element for realizing the proposed CNOT scheme is the entangled four-mode state.

Nonadiabatic geometrical quantum gates in semiconductor quantum dots

International Nuclear Information System (INIS)

Solinas, Paolo; Zanghi, Nino; Zanardi, Paolo; Rossi, Fausto

2003-01-01

In this paper, we study the implementation of nonadiabatic geometrical quantum gates with in semiconductor quantum dots. Different quantum information enconding (manipulation) schemes exploiting excitonic degrees of freedom are discussed. By means of the Aharanov-Anandan geometrical phase, one can avoid the limitations of adiabatic schemes relying on adiabatic Berry phase; fast geometrical quantum gates can be, in principle, implemented

An electrically reconfigurable logic gate intrinsically enabled by spin-orbit materials.

Science.gov (United States)

Kazemi, Mohammad

2017-11-10

The spin degree of freedom in magnetic devices has been discussed widely for computing, since it could significantly reduce energy dissipation, might enable beyond Von Neumann computing, and could have applications in quantum computing. For spin-based computing to become widespread, however, energy efficient logic gates comprising as few devices as possible are required. Considerable recent progress has been reported in this area. However, proposals for spin-based logic either require ancillary charge-based devices and circuits in each individual gate or adopt principals underlying charge-based computing by employing ancillary spin-based devices, which largely negates possible advantages. Here, we show that spin-orbit materials possess an intrinsic basis for the execution of logic operations. We present a spin-orbit logic gate that performs a universal logic operation utilizing the minimum possible number of devices, that is, the essential devices required for representing the logic operands. Also, whereas the previous proposals for spin-based logic require extra devices in each individual gate to provide reconfigurability, the proposed gate is 'electrically' reconfigurable at run-time simply by setting the amplitude of the clock pulse applied to the gate. We demonstrate, analytically and numerically with experimentally benchmarked models, that the gate performs logic operations and simultaneously stores the result, realizing the 'stateful' spin-based logic scalable to ultralow energy dissipation.

Development of anti-biofouling methods for gate facilities

International Nuclear Information System (INIS)

Fukuoka, Mari; Akamine, Kenichi; Iai, Yuuichi; Takatoo, Norihiro; Fukushima, Noriaki

2016-01-01

In the maintenance and management of gate facilities, a large sum of money and labor are required to remove and clean organisms that attach themselves to the facilities. That is why we developed two anti-biofouling systems, one that uses a weak electric current and another that uses ultrasonic waves. We carried out basic examinations and actual environment examinations to verify the effects of these methods. As a result, it has been confirmed that these methods effectively anti-foul the parts they are applied to, and that they can be used on gate facilities. In the future, we will evaluate their adaptability to aqueducts, such as those used in thermal and nuclear power plants, and marine structures, such as floating breakwaters, in addition to gate facilities. (author)

Toward error-free scaled spin torque majority gates

Energy Technology Data Exchange (ETDEWEB)

Vaysset, Adrien; Manfrini, Mauricio; Pourtois, Geoffrey; Radu, Iuliana P.; Thean, Aaron [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Nikonov, Dmitri E.; Manipatruni, Sasikanth; Young, Ian A. [Exploratory Integrated Circuits, Components Research, Intel Corp., Hillsboro, Oregon 97124 (United States)

2016-06-15

The functionality of a cross-shaped Spin Torque Majority Gate is explored by means of micromagnetic simulations. The different input combinations are simulated varying material parameters, current density and size. The main failure mode is identified: above a critical size, a domain wall can be pinned at the center of the cross, preventing further propagation of the information. By simulating several phase diagrams, the key parameters are obtained and the operating condition is deduced. A simple relation between the domain wall width and the size of the Spin Torque Majority Gate determines the working range. Finally, a correlation is found between the energy landscape and the main failure mode. We demonstrate that a macrospin behavior ensures a reliable majority gate operation.

Toward error-free scaled spin torque majority gates

Directory of Open Access Journals (Sweden)

Adrien Vaysset

2016-06-01

Full Text Available The functionality of a cross-shaped Spin Torque Majority Gate is explored by means of micromagnetic simulations. The different input combinations are simulated varying material parameters, current density and size. The main failure mode is identified: above a critical size, a domain wall can be pinned at the center of the cross, preventing further propagation of the information. By simulating several phase diagrams, the key parameters are obtained and the operating condition is deduced. A simple relation between the domain wall width and the size of the Spin Torque Majority Gate determines the working range. Finally, a correlation is found between the energy landscape and the main failure mode. We demonstrate that a macrospin behavior ensures a reliable majority gate operation.

Robustness of high-fidelity Rydberg gates with single-site addressability

Science.gov (United States)

Goerz, Michael H.; Halperin, Eli J.; Aytac, Jon M.; Koch, Christiane P.; Whaley, K. Birgitta

2014-09-01

Controlled-phase (cphase) gates can be realized with trapped neutral atoms by making use of the Rydberg blockade. Achieving the ultrahigh fidelities required for quantum computation with such Rydberg gates, however, is compromised by experimental inaccuracies in pulse amplitudes and timings, as well as by stray fields that cause fluctuations of the Rydberg levels. We report here a comparative study of analytic and numerical pulse sequences for the Rydberg cphase gate that specifically examines the robustness of the gate fidelity with respect to such experimental perturbations. Analytical pulse sequences of both simultaneous and stimulated Raman adiabatic passage (STIRAP) are found to be at best moderately robust under these perturbations. In contrast, optimal control theory is seen to allow generation of numerical pulses that are inherently robust within a predefined tolerance window. The resulting numerical pulse shapes display simple modulation patterns and can be rationalized in terms of an interference between distinct two-photon Rydberg excitation pathways. Pulses of such low complexity should be experimentally feasible, allowing gate fidelities of order 99.90-99.99% to be achievable under realistic experimental conditions.

Assessing self-reported use of new psychoactive substances: The impact of gate questions.

Science.gov (United States)

Palamar, Joseph J; Acosta, Patricia; Calderón, Fermín Fernández; Sherman, Scott; Cleland, Charles M

2017-09-01

New psychoactive substances (NPS) continue to emerge; however, few surveys of substance use ask about NPS use. Research is needed to determine how to most effectively query use of NPS and other uncommon drugs. To determine whether prevalence of self-reported lifetime and past-year use differs depending on whether or not queries about NPS use are preceded by "gate questions." Gate questions utilize skip-logic, such that only a "yes" response to the use of specific drug class is followed by more extensive queries of drug use in that drug class. We surveyed 1,048 nightclub and dance festival attendees (42.6% female) entering randomly selected venues in New York City in 2016. Participants were randomized to gate vs. no gate question before each drug category. Analyses focus on eight categories classifying 145 compounds: NBOMe, 2C, DOx, "bath salts" (synthetic cathinones), other stimulants, tryptamines, dissociatives, and non-phenethylamine psychedelics. Participants, however, were asked about specific "bath salts" regardless of their response to the gate question to test reliability. We examined whether prevalence of use of each category differed by gate condition and whether gate effects were moderated by participant demographics. Prevalence of use of DOx, other stimulants, and non-phenethylamine psychedelics was higher without a gate question. Gate effects for other stimulants and non-phenethylamine psychedelics were larger among white participants and those attending parties less frequently. Almost one in ten (9.3%) participants reporting no "bath salt" use via the gate question later reported use of a "bath salt" such as mephedrone, methedrone, or methylone. Omitting gate questions may improve accuracy of data collected via self-report.

A self-aligned gate definition process with submicron gaps

NARCIS (Netherlands)

Warmerdam, L.F.P.; Aarnink, Antonius A.I.; Holleman, J.; Wallinga, Hans

1989-01-01

A self-aligned gate definition process is proposed. Spacings between adjacent gates of 0.5 µm and smaller are fabricated. The spacing is realized by an edge-etch technique, combined with anisotropic plasma etching of the single poly-silicon layer. Straight gaps with minor width variation are

Voltage-Dependent Gating: Novel Insights from KCNQ1 Channels

Science.gov (United States)

Cui, Jianmin

2016-01-01

Gating of voltage-dependent cation channels involves three general molecular processes: voltage sensor activation, sensor-pore coupling, and pore opening. KCNQ1 is a voltage-gated potassium (Kv) channel whose distinctive properties have provided novel insights on fundamental principles of voltage-dependent gating. 1) Similar to other Kv channels, KCNQ1 voltage sensor activation undergoes two resolvable steps; but, unique to KCNQ1, the pore opens at both the intermediate and activated state of voltage sensor activation. The voltage sensor-pore coupling differs in the intermediate-open and the activated-open states, resulting in changes of open pore properties during voltage sensor activation. 2) The voltage sensor-pore coupling and pore opening require the membrane lipid PIP2 and intracellular ATP, respectively, as cofactors, thus voltage-dependent gating is dependent on multiple stimuli, including the binding of intracellular signaling molecules. These mechanisms underlie the extraordinary KCNE1 subunit modification of the KCNQ1 channel and have significant physiological implications. PMID:26745405

Photon-Mediated Quantum Gate between Two Neutral Atoms in an Optical Cavity

Science.gov (United States)

Welte, Stephan; Hacker, Bastian; Daiss, Severin; Ritter, Stephan; Rempe, Gerhard

2018-02-01

Quantum logic gates are fundamental building blocks of quantum computers. Their integration into quantum networks requires strong qubit coupling to network channels, as can be realized with neutral atoms and optical photons in cavity quantum electrodynamics. Here we demonstrate that the long-range interaction mediated by a flying photon performs a gate between two stationary atoms inside an optical cavity from which the photon is reflected. This single step executes the gate in 2 μ s . We show an entangling operation between the two atoms by generating a Bell state with 76(2)% fidelity. The gate also operates as a cnot. We demonstrate 74.1(1.6)% overlap between the observed and the ideal gate output, limited by the state preparation fidelity of 80.2(0.8)%. As the atoms are efficiently connected to a photonic channel, our gate paves the way towards quantum networking with multiqubit nodes and the distribution of entanglement in repeater-based long-distance quantum networks.

Photon-Mediated Quantum Gate between Two Neutral Atoms in an Optical Cavity

Directory of Open Access Journals (Sweden)

Stephan Welte

2018-02-01

Full Text Available Quantum logic gates are fundamental building blocks of quantum computers. Their integration into quantum networks requires strong qubit coupling to network channels, as can be realized with neutral atoms and optical photons in cavity quantum electrodynamics. Here we demonstrate that the long-range interaction mediated by a flying photon performs a gate between two stationary atoms inside an optical cavity from which the photon is reflected. This single step executes the gate in 2  μs. We show an entangling operation between the two atoms by generating a Bell state with 76(2% fidelity. The gate also operates as a cnot. We demonstrate 74.1(1.6% overlap between the observed and the ideal gate output, limited by the state preparation fidelity of 80.2(0.8%. As the atoms are efficiently connected to a photonic channel, our gate paves the way towards quantum networking with multiqubit nodes and the distribution of entanglement in repeater-based long-distance quantum networks.

ALTERNATIVE EQUATIONS FOR DYNAMIC BEHAVIOR OF IONIC CHANNEL ACTIVATION AND INACTIVATION GATES

Directory of Open Access Journals (Sweden)

Mahmut ÖZER

2003-03-01

Full Text Available In this paper, alternative equations for dynamics of ionic channel activation and inactivation gates are proposed based on the path probability method. Dynamic behavior of a voltage-gated ionic channel is modeled by the conventional Hodgkin-Huxley (H-H mathematical formalism. In that model, conductance of the channel is defined in terms of activation and inactivation gates. Dynamics of the activation and inactivation gates is modeled by first-order differential equations dependent on the gate variable and the membrane potential. In the new approach proposed in this study, dynamic behavior of activation and inactivation gates is modeled by a firstorder differential equation dependent on internal energy and membrane potential by using the path probability method which is widely used in statistical physics. The new model doesn't require the time constant and steadystate values which are used explicitly in the H-H model. The numerical results show validity of the proposed method.

Assessment of a quantum phase-gate operation based on nonlinear optics

International Nuclear Information System (INIS)

Rebic, S.; Ottaviani, C.; Di Giuseppe, G.; Vitali, D.; Tombesi, P.

2006-01-01

We analyze in detail the proposal for a two-qubit gate for travelling single-photon qubits recently presented by Ottaviani et al. [Phys. Rev. A 73, 010301(R) (2006)]. The scheme is based on an ensemble of five-level atoms coupled to two quantum and two classical light fields. The two quantum fields undergo cross-phase modulation induced by electromagnetically induced transparency. The performance of this two-qubit quantum phase gate for travelling single-photon qubits is thoroughly examined in the steady-state and transient regimes, by means of a full quantum treatment of the system dynamics. In the steady-state regime, we find a general trade-off between the size of the conditional phase shift and the fidelity of the gate operation. However, this trade-off can be bypassed in the transient regime, where a satisfactory gate operation is found to be possible, significantly reducing the gate operation time

Effect of incorporation of nitrogen atoms in Al2O3 gate dielectric of wide-bandgap-semiconductor MOSFET on gate leakage current and negative fixed charge

Science.gov (United States)

Kojima, Eiji; Chokawa, Kenta; Shirakawa, Hiroki; Araidai, Masaaki; Hosoi, Takuji; Watanabe, Heiji; Shiraishi, Kenji

2018-06-01

We performed first-principle calculations to investigate the effect of incorporation of N atoms into Al2O3 gate dielectrics. Our calculations show that the defect levels generated by VO in Al2O3 are the origin of the stress-induced gate leakage current and that VOVAl complexes in Al2O3 cause negative fixed charge. We revealed that the incorporation of N atoms into Al2O3 eliminates the VO defect levels, reducing the stress-induced gate leakage current. Moreover, this suppresses the formation of negatively charged VOVAl complexes. Therefore, AlON can reduce both stress-induced gate leakage current and negative fixed charge in wide-bandgap-semiconductor MOSFETs.

Defense.gov Special Report: Parade Honors Robert M. Gates

Science.gov (United States)

Medal of Freedom WASHINGTON - At his Armed Forces Farewell Tribute on the Pentagon's parade field Pentagon farewell ceremony at which Gates was awarded the Presidential Medal of Freedom. Story Mullen Lauds ' Speech at Farewell Parade Armed Forces Give Gates Farewell Tribute . Main Menu Home Today in DOD About

Scanning gate microscopy on graphene: charge inhomogeneity and extrinsic doping

International Nuclear Information System (INIS)

Jalilian, Romaneh; Tian Jifa; Chen, Yong P; Jauregui, Luis A; Lopez, Gabriel; Roecker, Caleb; Jovanovic, Igor; Yazdanpanah, Mehdi M; Cohn, Robert W

2011-01-01

We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET) using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at various back gate voltages is monitored as a function of tip voltage and tip position. Near the Dirac point, the response of graphene resistance to the tip voltage shows significant variation with tip position, and SGM imaging displays mesoscopic domains of electron-doped and hole-doped regions. Our measurements reveal substantial spatial fluctuation in the carrier density in graphene due to extrinsic local doping from sources such as metal contacts, graphene edges, structural defects and resist residues. Our scanning gate measurements also demonstrate graphene's excellent capability to sense the local electric field and charges.

Field-Programmable Gate Array-based fluxgate magnetometer with digital integration

Science.gov (United States)

Butta, Mattia; Janosek, Michal; Ripka, Pavel

2010-05-01

In this paper, a digital magnetometer based on printed circuit board fluxgate is presented. The fluxgate is pulse excited and the signal is extracted by gate integration. We investigate the possibility to perform integration on very narrow gates (typically 500 ns) by using digital techniques. The magnetometer is based on field-programmable gate array (FPGA) card: we will show all the advantages and disadvantages, given by digitalization of fluxgate output voltage by means of analog-to-digital converter on FPGA card, as well as digitalization performed by external digitizer. Due to very narrow gate, it is shown that a magnetometer entirely based on a FPGA card is preferable, because it avoids noise due to trigger instability. Both open loop and feedback operative mode are described and achieved results are presented.

Optimization of Ecg Gating in Quantitative Femoral Angiography

International Nuclear Information System (INIS)

Nilsson, S.; Berglund, I.; Erikson, U.; Johansson, J.; Walldius, G.

2003-01-01

Purpose: To determine which phase of the heart cycle would yield the highest reproducibility in measuring atherosclerosis-related variables such as arterial lumen volume and edge roughness. Material and Methods: 35 patients with hypercholesterolemia underwent select ive femoral angiography, repeated four times at 10-min intervals. The angiographies were performed with Ecg-gated exposures. In angiographies 1 and 2 the delay from R-wave maximum to each exposure was 0.1 s, in angiographies 3 and 4 the delay was 0.1, 0.3, 0.5 or 0.7 s or the exposures were performed 1/s without Ecg gating. Arterial lumen volume and edge roughness were measured in a 20-cm segment of the superficial femoral artery using a computer-based densitometric method. Measurement reproducibility was determined by comparing angiographies 1-2 and angiographies 3-4. Results: When measuring arterial lumen volume and edge roughness of a 20-cm segment of the femoral artery, reproducibility was not dependent on Ecg gating. In measuring single arterial diameters and cross-sectional areas, the reproducibility was better when exposures were made 0.1 s after the R-wave maximum than when using other settings of the Ecg gating device or without Ecg gating. Conclusion: The influence of pulsatile flow upon quantitative measurement in femoral angiograms seems to be the smallest possible in early systole, as can be demonstrated when measuring single diameters and cross-sectional areas. In variables based on integration over longer segments, measurement reproducibility seems to be independent of phase

Optimization of Ecg Gating in Quantitative Femoral Angiography

Energy Technology Data Exchange (ETDEWEB)

Nilsson, S.; Berglund, I.; Erikson, U. [Univ. Hospital, Uppsala (Sweden). Dept. of Oncology, Radiology and Clinical Immunology; Johansson, J.; Walldius, G. [Karolinska Hospital, Stockholm (Sweden). King Gustav V Research Inst.

2003-09-01

Purpose: To determine which phase of the heart cycle would yield the highest reproducibility in measuring atherosclerosis-related variables such as arterial lumen volume and edge roughness. Material and Methods: 35 patients with hypercholesterolemia underwent select ive femoral angiography, repeated four times at 10-min intervals. The angiographies were performed with Ecg-gated exposures. In angiographies 1 and 2 the delay from R-wave maximum to each exposure was 0.1 s, in angiographies 3 and 4 the delay was 0.1, 0.3, 0.5 or 0.7 s or the exposures were performed 1/s without Ecg gating. Arterial lumen volume and edge roughness were measured in a 20-cm segment of the superficial femoral artery using a computer-based densitometric method. Measurement reproducibility was determined by comparing angiographies 1-2 and angiographies 3-4. Results: When measuring arterial lumen volume and edge roughness of a 20-cm segment of the femoral artery, reproducibility was not dependent on Ecg gating. In measuring single arterial diameters and cross-sectional areas, the reproducibility was better when exposures were made 0.1 s after the R-wave maximum than when using other settings of the Ecg gating device or without Ecg gating. Conclusion: The influence of pulsatile flow upon quantitative measurement in femoral angiograms seems to be the smallest possible in early systole, as can be demonstrated when measuring single diameters and cross-sectional areas. In variables based on integration over longer segments, measurement reproducibility seems to be independent of phase.

Engineering integrated photonics for heralded quantum gates

Science.gov (United States)

Meany, Thomas; Biggerstaff, Devon N.; Broome, Matthew A.; Fedrizzi, Alessandro; Delanty, Michael; Steel, M. J.; Gilchrist, Alexei; Marshall, Graham D.; White, Andrew G.; Withford, Michael J.

2016-06-01

Scaling up linear-optics quantum computing will require multi-photon gates which are compact, phase-stable, exhibit excellent quantum interference, and have success heralded by the detection of ancillary photons. We investigate the design, fabrication and characterisation of the optimal known gate scheme which meets these requirements: the Knill controlled-Z gate, implemented in integrated laser-written waveguide arrays. We show device performance to be less sensitive to phase variations in the circuit than to small deviations in the coupler reflectivity, which are expected given the tolerance values of the fabrication method. The mode fidelity is also shown to be less sensitive to reflectivity and phase errors than the process fidelity. Our best device achieves a fidelity of 0.931 ± 0.001 with the ideal 4 × 4 unitary circuit and a process fidelity of 0.680 ± 0.005 with the ideal computational-basis process.

Engineering integrated photonics for heralded quantum gates.

Science.gov (United States)

Meany, Thomas; Biggerstaff, Devon N; Broome, Matthew A; Fedrizzi, Alessandro; Delanty, Michael; Steel, M J; Gilchrist, Alexei; Marshall, Graham D; White, Andrew G; Withford, Michael J

2016-06-10

Scaling up linear-optics quantum computing will require multi-photon gates which are compact, phase-stable, exhibit excellent quantum interference, and have success heralded by the detection of ancillary photons. We investigate the design, fabrication and characterisation of the optimal known gate scheme which meets these requirements: the Knill controlled-Z gate, implemented in integrated laser-written waveguide arrays. We show device performance to be less sensitive to phase variations in the circuit than to small deviations in the coupler reflectivity, which are expected given the tolerance values of the fabrication method. The mode fidelity is also shown to be less sensitive to reflectivity and phase errors than the process fidelity. Our best device achieves a fidelity of 0.931 ± 0.001 with the ideal 4 × 4 unitary circuit and a process fidelity of 0.680 ± 0.005 with the ideal computational-basis process.

A probabilistic CNOT gate for coherent state qubits

Energy Technology Data Exchange (ETDEWEB)

Oliveira, M.S.R.; Vasconcelos, H.M.; Silva, J.B.R., E-mail: joaobrs@ufc.br

2013-11-22

We propose a scheme for implementing a probabilistic controlled-NOT (CNOT) gate for coherent state qubits using only linear optics and a particular four-mode state. The proposed optical setup works, as a CNOT gate, near-faithful when |α|{sup 2}⩾25 and independent of the input state. The key element for realizing the proposed CNOT scheme is the entangled four-mode state.

Simultaneous ECG-gated PET imaging of multiple mice

International Nuclear Information System (INIS)

Seidel, Jurgen; Bernardo, Marcelino L.; Wong, Karen J.; Xu, Biying; Williams, Mark R.; Kuo, Frank; Jagoda, Elaine M.; Basuli, Falguni; Li, Changhui; Griffiths, Gary L.

2014-01-01

Introduction: We describe and illustrate a method for creating ECG-gated PET images of the heart for each of several mice imaged at the same time. The method is intended to increase “throughput” in PET research studies of cardiac dynamics or to obtain information derived from such studies, e.g. tracer concentration in end-diastolic left ventricular blood. Methods: An imaging bed with provisions for warming, anesthetic delivery, etc., was fabricated by 3D printing to allow simultaneous PET imaging of two side-by-side mice. After electrode attachment, tracer injection and placement of the animals in the scanner field of view, ECG signals from each animal were continuously analyzed and independent trigger markers generated whenever an R-wave was detected in each signal. PET image data were acquired in “list” mode and these trigger markers were inserted into this list along with the image data. Since each mouse is in a different spatial location in the FOV, sorting of these data using trigger markers first from one animal and then the other yields two independent and correctly formed ECG-gated image sequences that reflect the dynamical properties of the heart during an “average” cardiac cycle. Results: The described method yields two independent ECG-gated image sequences that exhibit the expected properties in each animal, e.g. variation of the ventricular cavity volumes from maximum to minimum and back during the cardiac cycle in the processed animal with little or no variation in these volumes during the cardiac cycle in the unprocessed animal. Conclusion: ECG-gated image sequences for each of several animals can be created from a single list mode data collection using the described method. In principle, this method can be extended to more than two mice (or other animals) and to other forms of physiological gating, e.g. respiratory gating, when several subjects are imaged at the same time

Applications of a controlled phase gate for photons

International Nuclear Information System (INIS)

Schmid, C.; Kiesel, N.; Weber, U.; Weinfurter, H.; Toth, G; Ursin, R.; Guehne, O.

2005-01-01

Full text: We report on experimental applications of a probabilistic quantum controlled-phase gate for photons. The gate is operating on the polarization degree of freedom and applies a pi phase shift to a target photon, conditioned on the polarization of a control photon. This is experimentally realized by overlapping the input photons on a beam splitter with polarization dependent splitting ratio (TH=1, TV=1/3). The phase is thereby introduced by a second order interference in case two vertically polarized photons are passing the gate. In order to ensure polarization independent weighting coefficients for the output states of all possible input combinations, two beam splitters with reversed splitting ratio (TH=1/3, TV=1) are placed after each output of the overlap BS. The gate allows the implementation of a full Bell state analysis and by this the accomplishment of a complete teleportation experiment. As input we used horizontal, vertical, +45 o , and right circular polarized photon states from which we could deduce a teleportation process tomography for each of the four Bell states detected. Whereas in the Bell state analysis the gate maps an entangled state onto a product state, it can be used as well in the opposite way for an entangling operation. We exploit this fact to generate a certain four qubit entangled state, the so-called four-photon cluster state. In order to do so we apply the gate on two photons of two different EPR pairs originating from a spontaneous parametric down conversion process. The resulting experimental state shows a fidelity of 74.4 ± 1.2 % to the theoretically expected one. By the experimental violation of a specially tailored Bell inequality we are able to proof its non-locality and delimit it from a GHZ state. We demonstrate its genuine four-photon entanglement by a witness measurement. Furthermore we characterize the generated state by the study of its remarkable entanglement persistency properties with respect to the measurement

Controllable conditional quantum oscillations and quantum gate operations in superconducting flux qubits

International Nuclear Information System (INIS)

Chen Aimin; Cho Samyoung

2011-01-01

Conditional quantum oscillations are investigated for quantum gate operations in superconducting flux qubits. We present an effective Hamiltonian which describes a conditional quantum oscillation in two-qubit systems. Rabi-type quantum oscillations are discussed in implementing conditional quantum oscillations to quantum gate operations. Two conditional quantum oscillations depending on the states of control qubit can be synchronized to perform controlled-gate operations by varying system parameters. It is shown that the conditional quantum oscillations with their frequency synchronization make it possible to operate the controlled-NOT and -U gates with a very accurate gate performance rate in interacting qubit systems. Further, this scheme can be applicable to realize a controlled multi-qubit operation in various solid-state qubit systems. (author)

Instrumentation for Gate Current Noise Measurements on sub-100 nm MOS Transistors

CERN Document Server

Gaioni, L; Ratti, L; Re, V; Speziali, V; Traversi, G

2008-01-01

This work describes a measuring system that was developed to characterize the gate current noise performances of CMOS devices with minimum feature size in the 100 nm span. These devices play an essential role in the design of present daymixedsignal integrated circuits, because of the advantages associated with the scaling process. The reduction in the gate oxide thickness brought about by CMOS technology downscaling leads to a non-negligible gate current due to direct tunneling phenomena; this current represents a noise source which requires an accurate characterization for optimum analog design. In this paper, two instruments able to perform measurements in two different ranges of gate current values will be discussed. Some of the results of gate current noise characterization will also be presented.

Hysteresis analysis of graphene transistor under repeated test and gate voltage stress

International Nuclear Information System (INIS)

Yang Jie; Jia Kunpeng; Su Yajuan; Zhao Chao; Chen Yang

2014-01-01

The current transport characteristic is studied systematically based on a back-gate graphene field effect transistor, under repeated test and gate voltage stress. The interface trapped charges caused by the gate voltage sweep process screens the gate electric field, and results in the neutral point voltage shift between the forth and back sweep direction. In the repeated test process, the neutral point voltage keeps increasing with test times in both forth and back sweeps, which indicates the existence of interface trapped electrons residual and accumulation. In gate voltage stress experiment, the relative neutral point voltage significantly decreases with the reducing of stress voltage, especially in −40 V, which illustrates the driven-out phenomenon of trapped electrons under negative voltage stress. (semiconductor devices)

Negative charge induced degradation of PMOSFETs with BF2-implanted p+-poly gate

International Nuclear Information System (INIS)

Lu, C.Y.; Sung, J.M.

1989-01-01

A new degradation phenomenon on thin gate oxide PMOS-FETs with BF 2 implanted p + -poly gate has been demonstrated and investigated. The cause of this type of degradation is a combination of the boron penetration through the gate oxide and charge trap generation due to the presence of fluorine in the gate oxide and some other processing-induced effects. The negative charge-induced degradation other than enhanced boron diffusion has been studied in detail here. The impact of this process-sensitive p + -poly gate structure on deep submicron CMOS process integration has been discussed. (author)

Gated x-ray detector for the National Ignition Facility

International Nuclear Information System (INIS)

Oertel, John A.; Aragonez, Robert; Archuleta, Tom; Barnes, Cris; Casper, Larry; Fatherley, Valerie; Heinrichs, Todd; King, Robert; Landers, Doug; Lopez, Frank; Sanchez, Phillip; Sandoval, George; Schrank, Lou; Walsh, Peter; Bell, Perry; Brown, Matt; Costa, Robert; Holder, Joe; Montelongo, Sam; Pederson, Neal

2006-01-01

Two new gated x-ray imaging cameras have recently been designed, constructed, and delivered to the National Ignition Facility in Livermore, CA. These gated x-Ray detectors are each designed to fit within an aluminum airbox with a large capacity cooling plane and are fitted with an array of environmental housekeeping sensors. These instruments are significantly different from earlier generations of gated x-ray images due, in part, to an innovative impedance matching scheme, advanced phosphor screens, pulsed phosphor circuits, precision assembly fixturing, unique system monitoring, and complete remote computer control. Preliminary characterization has shown repeatable uniformity between imaging strips, improved spatial resolution, and no detectable impedance reflections

Quantum computer gate simulations | Dada | Journal of the Nigerian ...

African Journals Online (AJOL)

A new interactive simulator for Quantum Computation has been developed for simulation of the universal set of quantum gates and for construction of new gates of up to 3 qubits. The simulator also automatically generates an equivalent quantum circuit for any arbitrary unitary transformation on a qubit. Available quantum ...

Experimental implementation of optimal linear-optical controlled-unitary gates

Czech Academy of Sciences Publication Activity Database

Lemr, K.; Bartkiewicz, K.; Černoch, Antonín; Dušek, M.; Soubusta, Jan

2015-01-01

Roč. 114, č. 15 (2015), "153602-1"-"153602-5" ISSN 0031-9007 R&D Projects: GA ČR GAP205/12/0382 Institutional support: RVO:68378271 Keywords : two-qubit gates * optimal linear-optical controlled-unitary gates * quantum computing Subject RIV: BH - Optics, Masers, Lasers Impact factor: 7.645, year: 2015

Dose modulated retrospective ECG-gated versus non-gated 64-row CT angiography of the aorta at the same radiation dose: Comparison of motion artifacts, diagnostic confidence and signal-to-noise-ratios

International Nuclear Information System (INIS)

Schernthaner, Ruediger E.; Stadler, Alfred; Beitzke, Dietrich; Homolka, Peter; Weber, Michael; Lammer, Johannes; Czerny, Martin; Loewe, Christian

2012-01-01

Purpose: To compare ECG-gated and non-gated CT angiography of the aorta at the same radiation dose, with regard to motion artifacts (MA), diagnostic confidence (DC) and signal-to-noise-ratios (SNRs). Materials and methods: Sixty consecutive patients prospectively randomized into two groups underwent 64-row CT angiography, with or without dose-modulated ECG-gating, of the entire aorta, due to several pathologies of the ascending aorta. MA and DC were both assessed using a four-point scale. SNRs were calculated by dividing the mean enhancement by the standard deviation. The dose-length-product (DLP) of each examination was recorded and the effective dose was estimated. Results: Dose-modulated ECG-gating showed statistically significant advantages over non-gated CT angiography, with regard to MA (p < 0.001) and DC (p < 0.001), at the aortic valve, at the origin of the coronary arteries, and at the dissection membrane, with a significant correlation (p < 0.001) between MA and DC. At the aortic wall, however, ECG-gated CT angiography showed statistically significant fewer MA (p < 0.001), but not a statistically significant higher DC (p = 0.137) compared to non-gated CT angiography. At the supra-aortic vessels and the descending aorta, the ECG-triggering showed no statistically significant differences with regard to MA (p = 0.861 and 0.526, respectively) and DC (p = 1.88 and 0.728, respectively). The effective dose of ECG-gated CT angiography (23.24 mSv; range, 18.43–25.94 mSv) did not differ significantly (p = 0.051) from that of non-gated CT angiography (24.28 mSv; range, 19.37–29.27 mSv). Conclusion: ECG-gated CT angiography of the entire aorta reduces MA and results in a higher DC with the same SNR, compared to non-gated CT angiography at the same radiation dose.

DC Characteristics of AlGaN/GaN HEMTs Using a Dual-Gate Structure.

Science.gov (United States)

Hong, Sejun; Rana, Abu ul Hassan Sarwar; Heo, Jun-Woo; Kim, Hyun-Seok

2015-10-01

Multiple techniques such as fluoride-based plasma treatment, a p-GaN or p-AlGaN gate contact, and a recessed gate structure have been employed to modulate the threshold voltage of AlGaN/GaN-based high-electron-mobility transistors (HEMTs). In this study, we present dual-gate AlGaN/GaN HEMTs grown on a Si substrate, which effectively shift the threshold voltage in the positive direction. Experimental data show that the threshold voltage is shifted from -4.2 V in a conventional single-gate HEMT to -2.8 V in dual-gate HEMTs. It is evident that a second gate helps improve the threshold voltage by reducing the two-dimensional electron gas density in the channel. Furthermore, the maximum drain current, maximum transconductance, and breakdown voltage values of a single-gate device are not significantly different from those of a dual-gate device. For the fabricated single- and dual-gate devices, the values of the maximum drain current are 430 mA/mm and 428 mA/mm, respectively, whereas the values of the maximum transconductance are 83 mS/mm and 75 mS/mm, respectively.

Round Gating for Low Energy Block Ciphers

DEFF Research Database (Denmark)

Banik, Subhadeep; Bogdanov, Andrey; Regazzoni, Francesco

2016-01-01

design techniques for implementing block ciphers in a low energy fashion. We concentrate on round based implementation and we discuss how gating, applied at round level can affect and improve the energy consumption of the most common lightweight block cipher currently used in the internet of things....... Additionally, we discuss how to needed gating wave can be generated. Experimental results show that our technique is able to reduce the energy consumption in most block ciphers by over 60% while incurring only a minimal overhead in hardware....

DATABASE OF MIGRATION AND REPLICATION WITH ORACLE GOLDEN GATE

Directory of Open Access Journals (Sweden)

Suharjito Suharjito

2014-10-01

Full Text Available The main goal of this research is to analyze and design a database configuration of migration and replication in PT Metro Batavia. Research methodologies used in this research are data collecting, analysis and design model. Data collecting method is conducted with library research and direct survey in the company. Analysis method is conducted by analyzing hangar system, migration and reflection process and the available problems. Design method is conducted by designing a prototype for migration process with the implementation of Oracle SQL Developer and replication process with implementation of Oracle Golden Gate. The result of this research is a prototype for configuration of migration and replication process by using Oracle Golden Gate, which can produce two sets of identical data for the purpose of backup and recovery, and also design a simple tool that is expected to help active-active or active-passive replication process. The conclusion of this research is migration process of MySQL database to Oracle database by using Oracle Golden Gate hasn’t been conducted, because Oracle Golden Gate still has bug related to binary log, so database of migration is conducted by using Oracle Golden Gate. However, replication of bi-directional in between database of Oracle by using Oracle SQL Developer can guarantee data availability and reduce work burden from primary database.

Respiratory gating based on internal electromagnetic motion monitoring during stereotactic liver radiation therapy: First results.

Science.gov (United States)

Poulsen, Per Rugaard; Worm, Esben Schjødt; Hansen, Rune; Larsen, Lars Peter; Grau, Cai; Høyer, Morten

2015-01-01

Intrafraction motion may compromise the target dose in stereotactic body radiation therapy (SBRT) of tumors in the liver. Respiratory gating can improve the treatment delivery, but gating based on an external surrogate signal may be inaccurate. This is the first paper reporting on respiratory gating based on internal electromagnetic monitoring during liver SBRT. Two patients with solitary liver metastases were treated with respiratory-gated SBRT guided by three implanted electromagnetic transponders. The treatment was delivered in end-exhale with beam-on when the centroid of the three transponders deviated less than 3 mm [left-right (LR) and anterior-posterior (AP) directions] and 4mm [cranio-caudal (CC)] from the planned position. For each treatment fraction, log files were used to determine the transponder motion during beam-on in the actual gated treatments and in simulated treatments without gating. The motion was used to reconstruct the dose to the clinical target volume (CTV) with and without gating. The reduction in D95 (minimum dose to 95% of the CTV) relative to the plan was calculated for both treatment courses. With gating the maximum course mean (standard deviation) geometrical error in any direction was 1.2 mm (1.8 mm). Without gating the course mean error would mainly increase for Patient 1 [to -2.8 mm (1.6 mm) (LR), 7.1 mm (5.8 mm) (CC), -2.6 mm (2.8mm) (AP)] due to a large systematic cranial baseline drift at each fraction. The errors without gating increased only slightly for Patient 2. The reduction in CTV D95 was 0.5% (gating) and 12.1% (non-gating) for Patient 1 and 0.3% (gating) and 1.7% (non-gating) for Patient 2. The mean duty cycle was 55%. Respiratory gating based on internal electromagnetic motion monitoring was performed for two liver SBRT patients. The gating added robustness to the dose delivery and ensured a high CTV dose even in the presence of large intrafraction motion.

Cascading of molecular logic gates for advanced functions: a self-reporting, activatable photosensitizer.

Science.gov (United States)

Erbas-Cakmak, Sundus; Akkaya, Engin U

2013-10-18

Logical progress: Independent molecular logic gates have been designed and characterized. Then, the individual molecular logic gates were coerced to work together within a micelle. Information relay between the two logic gates was achieved through the intermediacy of singlet oxygen. Working together, these concatenated logic gates result in a self-reporting and activatable photosensitizer. GSH=glutathione. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

MaGate Simulator: A Simulation Environment for a Decentralized Grid Scheduler

Science.gov (United States)

Huang, Ye; Brocco, Amos; Courant, Michele; Hirsbrunner, Beat; Kuonen, Pierre

This paper presents a simulator for of a decentralized modular grid scheduler named MaGate. MaGate’s design emphasizes scheduler interoperability by providing intelligent scheduling serving the grid community as a whole. Each MaGate scheduler instance is able to deal with dynamic scheduling conditions, with continuously arriving grid jobs. Received jobs are either allocated on local resources, or delegated to other MaGates for remote execution. The proposed MaGate simulator is based on GridSim toolkit and Alea simulator, and abstracts the features and behaviors of complex fundamental grid elements, such as grid jobs, grid resources, and grid users. Simulation of scheduling tasks is supported by a grid network overlay simulator executing distributed ant-based swarm intelligence algorithms to provide services such as group communication and resource discovery. For evaluation, a comparison of behaviors of different collaborative policies among a community of MaGates is provided. Results support the use of the proposed approach as a functional ready grid scheduler simulator.

Optimal inverter logic gate using 10-nm double gate-all-around (DGAA transistor with asymmetric channel width

Directory of Open Access Journals (Sweden)

Myunghwan Ryu

2016-01-01

Full Text Available We investigate the electrical characteristics of a double-gate-all-around (DGAA transistor with an asymmetric channel width using three-dimensional device simulation. The DGAA structure creates a silicon nanotube field-effect transistor (NTFET with a core-shell gate architecture, which can solve the problem of loss of gate controllability of the channel and provides improved short-channel behavior. The channel width asymmetry is analyzed on both sides of the terminals of the transistors, i.e., source and drain. In addition, we consider both n-type and p-type DGAA FETs, which are essential to forming a unit logic cell, the inverter. Simulation results reveal that, according to the carrier types, the location of the asymmetry has a different effect on the electrical properties of the devices. Thus, we propose the N/P DGAA FET structure with an asymmetric channel width to form the optimal inverter. Various electrical metrics are analyzed to investigate the benefits of the optimal inverter structure over the conventional inverter structure. Simulation results show that 27% delay and 15% leakage power improvement are enabled in the optimum structure.

The mechanism of fast-gate opening in ClC-0.

Science.gov (United States)

Engh, Anita M; Faraldo-Gómez, José D; Maduke, Merritt

2007-10-01

ClC-0 is a chloride channel whose gating is sensitive to both voltage and chloride. Based on analysis of gating kinetics using single-channel recordings, a five-state model was proposed to describe the dependence of ClC-0 fast-gate opening on voltage and external chloride (Chen, T.-Y., and C. Miller. 1996. J. Gen. Physiol. 108:237-250). We aimed to use this five-state model as a starting point for understanding the structural changes that occur during gating. Using macroscopic patch recordings, we were able to reproduce the effects of voltage and chloride that were reported by Chen and Miller and to fit our opening rate constant data to the five-state model. Upon further analysis of both our data and those of Chen and Miller, we learned that in contrast to their conclusions, (a) the features in the data are not adequate to rule out a simpler four-state model, and (b) the chloride-binding step is voltage dependent. In order to be able to evaluate the effects of mutants on gating (described in the companion paper, see Engh et al. on p. 351 of this issue), we developed a method for determining the error on gating model parameters, and evaluated the sources of this error. To begin to mesh the kinetic model(s) with the known CLC structures, a model of ClC-0 was generated computationally based on the X-ray crystal structure of the prokaryotic homolog ClC-ec1. Analysis of pore electrostatics in this homology model suggests that at least two of the conclusions derived from the gating kinetics analysis are consistent with the known CLC structures: (1) chloride binding is necessary for channel opening, and (2) chloride binding to any of the three known chloride-binding sites must be voltage dependent.

Measurement of ventricular function by ECG gating during atrial fibrillation

International Nuclear Information System (INIS)

Bacharach, S.L.; Green, M.V.; Bonow, R.O.; Findley, S.L.; Ostrow, H.G.; Johnston, G.S.

1981-01-01

The assumptions necessary to perform ECG-gated cardiac studies are seemingly not valid for patients in atrial fibrillation (AF). To evaluate the effect of AF on equilibrium gated scintigraphy, beat-by-beat measurements of left-ventricular function were made on seven subjects in AF (mean heart rate 64 bpm), using a high-efficiency nonimaging detector. The parameters evaluated were ejection fraction (EF), time to end-systole (TES), peak rates of ejection and filling (PER,PFR), and their times of occurrence (TPER, TPFR). By averaging together single-beat values of EF, PER, etc., it was possible to determine the true mean values of these parameters. The single-beam mean values were compared with the corresponding parameters calculated from one ECG-gated time-activity curve (TAC) obtained by superimposing all the single-beat TACs irrespective of their length. For this population with slow heart rates, we find that the values for EF, etc., produced from ECG-gated time-activity curves, are very similar to those obtained from the single-beat data. Thus use of ECG gating at low heart rates may allow reliable estimation of average cardiac function even in subjects with AF

Polycrystalline diamond RF MOSFET with MoO3 gate dielectric

Directory of Open Access Journals (Sweden)

Zeyang Ren

2017-12-01

Full Text Available We report the radio frequency characteristics of the diamond metal-oxide-semiconductor field effect transistor with MoO3 gate dielectric for the first time. The device with 2-μm gate length was fabricated on high quality polycrystalline diamond. The maximum drain current of 150 mA/mm at VGS = -5 V and the maximum transconductance of 27 mS/mm were achieved. The extrinsic cutoff frequency of 1.2 GHz and the maximum oscillation frequency of 1.9 GHz have been measured. The moderate frequency characteristics are attributed to the moderate transconductance limited by the series resistance along the channel. We expect that the frequency characteristics of the device can be improved by increasing the magnitude of gm, or fundamentally decreasing the gate-controlled channel resistance and series resistance along the channel, and down-scaling the gate length.

Study on effective MOSFET channel length extracted from gate capacitance

Science.gov (United States)

Tsuji, Katsuhiro; Terada, Kazuo; Fujisaka, Hisato

2018-01-01

The effective channel length (L GCM) of metal-oxide-semiconductor field-effect transistors (MOSFETs) is extracted from the gate capacitances of actual-size MOSFETs, which are measured by charge-injection-induced-error-free charge-based capacitance measurement (CIEF CBCM). To accurately evaluate the capacitances between the gate and the channel of test MOSFETs, the parasitic capacitances are removed by using test MOSFETs having various channel sizes and a source/drain reference device. A strong linear relationship between the gate-channel capacitance and the design channel length is obtained, from which L GCM is extracted. It is found that L GCM is slightly less than the effective channel length (L CRM) extracted from the measured MOSFET drain current. The reason for this is discussed, and it is found that the capacitance between the gate electrode and the source and drain regions affects this extraction.

Cnidarian Toxins Acting on Voltage-Gated Ion Channels

Directory of Open Access Journals (Sweden)

Robert M. Greenberg

2006-04-01

Full Text Available Abstract: Voltage-gated ion channels generate electrical activity in excitable cells. As such, they are essential components of neuromuscular and neuronal systems, and are targeted by toxins from a wide variety of phyla, including the cnidarians. Here, we review cnidarian toxins known to target voltage-gated ion channels, the specific channel types targeted, and, where known, the sites of action of cnidarian toxins on different channels.

Gated CT imaging using a free-breathing respiration signal from flow-volume spirometry

International Nuclear Information System (INIS)

D'Souza, Warren D.; Kwok, Young; Deyoung, Chad; Zacharapoulos, Nicholas; Pepelea, Mark; Klahr, Paul; Yu, Cedric X.

2005-01-01

Respiration-induced tumor motion is known to cause artifacts on free-breathing spiral CT images used in treatment planning. This leads to inaccurate delineation of target volumes on planning CT images. Flow-volume spirometry has been used previously for breath-holds during CT scans and radiation treatments using the active breathing control (ABC) system. We have developed a prototype by extending the flow-volume spirometer device to obtain gated CT scans using a PQ 5000 single-slice CT scanner. To test our prototype, we designed motion phantoms to compare image quality obtained with and without gated CT scan acquisition. Spiral and axial (nongated and gated) CT scans were obtained of phantoms with motion periods of 3-5 s and amplitudes of 0.5-2 cm. Errors observed in the volume estimate of these structures were as much as 30% with moving phantoms during CT simulation. Application of motion-gated CT with active breathing control reduced these errors to within 5%. Motion-gated CT was then implemented in patients and the results are presented for two clinical cases: lung and abdomen. In each case, gated scans were acquired at end-inhalation, end-exhalation in addition to a conventional free-breathing (nongated) scan. The gated CT scans revealed reduced artifacts compared with the conventional free-breathing scan. Differences of up to 20% in the volume of the structures were observed between gated and free-breathing scans. A comparison of the overlap of structures between the gated and free-breathing scans revealed misalignment of the structures. These results demonstrate the ability of flow-volume spirometry to reduce errors in target volumes via gating during CT imaging

An electronically controlled automatic security access gate

Directory of Open Access Journals (Sweden)

Jonathan A. ENOKELA

2014-11-01

Full Text Available The security challenges being encountered in many places require electronic means of controlling access to communities, recreational centres, offices, and homes. The electronically controlled automated security access gate being proposed in this work helps to prevent an unwanted access to controlled environments. This is achieved mainly through the use of a Radio Frequency (RF transmitter-receiver pair. In the design a microcontroller is programmed to decode a given sequence of keys that is entered on a keypad and commands a transmitter module to send out this code as signal at a given radio frequency. Upon reception of this RF signal by the receiver module, another microcontroller activates a driver circuitry to operate the gate automatically. The codes for the microcontrollers were written in C language and were debugged and compiled using the KEIL Micro vision 4 integrated development environment. The resultant Hex files were programmed into the memories of the microcontrollers with the aid of a universal programmer. Software simulation was carried out using the Proteus Virtual System Modeling (VSM version 7.7. A scaled-down prototype of the system was built and tested. The electronically controlled automated security access gate can be useful in providing security for homes, organizations, and automobile terminals. The four-character password required to operate the gate gives the system an increased level of security. Due to its standalone nature of operation the system is cheaper to maintain in comparison with a manually operated type.

Simulation of dual-gate SOI MOSFET with different dielectric layers

Science.gov (United States)

Yadav, Jyoti; Chaudhary, R.; Mukhiya, R.; Sharma, R.; Khanna, V. K.

2016-04-01

The paper presents the process design and simulation of silicon-on-insulator (SOI)-based dual-gate metal oxide field-effect transistor (DG-MOSFET) stacked with different dielectric layers on the top of gate oxide. A detailed 2D process simulation of SOI-MOSFETs and its electrical characterization has been done using SILVACO® TCAD tool. A variation in transconductance was observed with different dielectric layers, AlN-gate MOSFET having the highest tranconductance value as compared to other three dielectric layers (SiO2, Si3N4 and Al2O3).

Design of a spin-wave majority gate employing mode selection

Energy Technology Data Exchange (ETDEWEB)

Klingler, S., E-mail: klingler@physik.uni-kl.de; Pirro, P.; Brächer, T.; Leven, B.; Hillebrands, B.; Chumak, A. V. [Fachbereich Physik and Landesforschungszentrum OPTIMAS, Technische Universität Kaiserslautern, 67663 Kaiserslautern (Germany)

2014-10-13

The design of a microstructured, fully functional spin-wave majority gate is presented and studied using micromagnetic simulations. This all-magnon logic gate consists of three-input waveguides, a spin-wave combiner, and an output waveguide. In order to ensure the functionality of the device, the output waveguide is designed to perform spin-wave mode selection. We demonstrate that the gate evaluates the majority of the input signals coded into the spin-wave phase. Moreover, the all-magnon data processing device is used to perform logic AND-, OR-, NAND-, and NOR- operations.

Chaotic logic gate: A new approach in set and design by genetic algorithm

International Nuclear Information System (INIS)

Beyki, Mahmood; Yaghoobi, Mahdi

2015-01-01

How to reconfigure a logic gate is an attractive subject for different applications. Chaotic systems can yield a wide variety of patterns and here we use this feature to produce a logic gate. This feature forms the basis for designing a dynamical computing device that can be rapidly reconfigured to become any wanted logical operator. This logic gate that can reconfigure to any logical operator when placed in its chaotic state is called chaotic logic gate. The reconfiguration realize by setting the parameter values of chaotic logic gate. In this paper we present mechanisms about how to produce a logic gate based on the logistic map in its chaotic state and genetic algorithm is used to set the parameter values. We use three well-known selection methods used in genetic algorithm: tournament selection, Roulette wheel selection and random selection. The results show the tournament selection method is the best method for set the parameter values. Further, genetic algorithm is a powerful tool to set the parameter values of chaotic logic gate

AlGaN/GaN high-electron-mobility transistors with transparent gates by Al-doped ZnO

International Nuclear Information System (INIS)

Wang Chong; He Yun-Long; Zheng Xue-Feng; Ma Xiao-Hua; Zhang Jin-Cheng; Hao Yue

2013-01-01

AlGaN/GaN high-electron-mobility transistors (HEMTs) with Al-doped ZnO (AZO) transparent gate electrodes are fabricated, and Ni/Au/Ni-gated HEMTs are produced in comparison. The AZO-gated HEMTs show good DC characteristics and Schottky rectifying characteristics, and the gate electrodes achieve excellent transparencies. Compared with Ni/Au/Ni-gated HEMTs, AZO-gated HEMTs show a low saturation current, high threshold voltage, high Schottky barrier height, and low gate reverse leakage current. Due to the higher gate resistivity, AZO-gated HEMTs exhibit a current—gain cutoff frequency (f T ) of 10 GHz and a power gain cutoff frequency (f max ) of 5 GHz, and lower maximum oscillation frequency than Ni/Au/Ni-gated HEMTs. Moreover, the C—V characteristics are measured and the gate interface characteristics of the AZO-gated devices are investigated by a C—V dual sweep

High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

Science.gov (United States)

Woo, Whang Je; Nam, Taewook; Oh, Il-Kwon; Maeng, Wanjoo; Kim, Hyungjun

2018-05-01

The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.

High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

Science.gov (United States)

Woo, Whang Je; Nam, Taewook; Oh, Il-Kwon; Maeng, Wanjoo; Kim, Hyungjun

2018-02-01

The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.

Automatic cardiac gating of small-animal PET from list-mode data

Energy Technology Data Exchange (ETDEWEB)

Herraiz, J.L.; Udias, J.M. [Universidad Complutense de Madrid Univ. (Spain). Grupo de Fisica Nuclear; Vaquero, J.J.; Desco, M. [Universidad Carlos III de Madrid (Spain). Dept. de Bioingenieria e Ingenieria Aeroespacial; Cusso, L. [Hospital General Universitario Gregorio Maranon, Madrid (Spain). Unidad de Medicina y Cirugia Experimental

2011-07-01

This work presents a method to obtain automatically the cardiac gating signal in a PET study of rats, by employing the variation with time of the counts in the cardiac region, that can be extracted from list-mode data. In an initial step, the cardiac region is identified in the image space by backward-projecting a small fraction of the acquired data and studying the variation with time of the counts in each voxel inside said region, with frequencies within 2 and 8 Hz. The region obtained corresponds accurately to the left-ventricle of the heart of the rat. In a second step, the lines-of-response (LORs) connected with this region are found by forward-projecting this region. The time variation of the number of counts in these LORs contains the cardiac motion information that we want to extract. This variation of counts with time is band-pass filtered to reduce noise, and the time signal so obtained is used to create the gating signal. The result was compared with a cardiac gating signal obtained from an ECG acquired simultaneously to the PET study. Reconstructed gated images obtained from both gating information are similar. The method proposed demonstrates that valid cardiac gating signals can be obtained for rats from PET list-mode data. (orig.)

Technical and dosimetric aspects of respiratory gating using a pressure-sensor motion monitoring system

International Nuclear Information System (INIS)

Li, X. Allen; Stepaniak, Christopher; Gore, Elizabeth

2006-01-01

This work introduces a gating technique that uses 4DCT to determine gating parameters and to plan gated treatment, and employs a Siemens linear accelerator to deliver the gated treatment. Because of technology incompatibility, the 4DCT scanner (LightSpeed, GE) and the Siemens accelerator require two different motion-monitoring systems. The motion monitoring system (AZ-773V, Anzai Med.) used for the gated delivery utilizes a pressure sensor to detect the external respiratory motion (pressure change) in real time. Another system (RPM, Varian) used for the 4DCT scanner (LightSpeed, GE) is based on an infrared camera to detect motion of external markers. These two motion monitoring systems (RPM and Anzai systems) were found to correlate well with each other. The depth doses and profile measured for gated delivery (with a duty cycle of 25% or 50%) were found to agree within 1.0% with those measured for ungated delivery, indicating that gating did not significantly alter beam characteristics. The measurement verified also that the MU linearity and beam output remained unchanged (within 0.3%). A practical method of using 4DCT to plan a gated treatment was developed. The duty cycle for either phase or amplitude gating can be determined based on 4DCT with consideration of set-up error and delivery efficiency. The close-loop measurement involving the entire gating process (imaging, planning, and delivery) showed that the measured isodose distributions agreed with those intended, validating the accuracy and reliability of the gating technique. Based these observations, we conclude that the gating technique introduced in this work, integrating Siemens linear accelerator and Anzai pressure sensor device with GE/Varian RPM 4DCT, is reliable and effective, and it can be used clinically to account for respiratory motion during radiation therapy

Self-aligned top-gate InGaZnO thin film transistors using SiO{sub 2}/Al{sub 2}O{sub 3} stack gate dielectric

Energy Technology Data Exchange (ETDEWEB)

Chen, Rongsheng; Zhou, Wei; Zhang, Meng; Wong, Man; Kwok, Hoi Sing

2013-12-02

Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin film transistors (TFTs) utilizing SiO{sub 2}/Al{sub 2}O{sub 3} stack thin films as gate dielectric are developed in this paper. Due to high quality of the high-k Al{sub 2}O{sub 3} and good interface between active layer and gate dielectric, the resulting a-IGZO TFT exhibits good electrical performance including field-effect mobility of 9 cm{sup 2}/Vs, threshold voltage of 2.2 V, subthreshold swing of 0.2 V/decade, and on/off current ratio of 1 × 10{sup 7}. With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiO{sub 2}/Al{sub 2}O{sub 3} stack gate dielectric is proposed. • The source/drain areas are hydrogen-doped by CHF{sub 3} plasma. • The devices show good electrical performance and scaling down behavior.

Self-gated golden-angle spiral 4D flow MRI.

Science.gov (United States)

Bastkowski, Rene; Weiss, Kilian; Maintz, David; Giese, Daniel

2018-01-17

The acquisition of 4D flow magnetic resonance imaging (MRI) in cardiovascular applications has recently made large progress toward clinical feasibility. The need for simultaneous compensation of cardiac and breathing motion still poses a challenge for widespread clinical use. Especially, breathing motion, addressed by gating approaches, can lead to unpredictable and long scan times. The current work proposes a time-efficient self-gated 4D flow sequence that exploits up to 100% of the acquired data and operates at a predictable scan time. A self-gated golden-angle spiral 4D flow sequence was implemented and tested in 10 volunteers. Data were retrospectively binned into respiratory and cardiac states and reconstructed using a conjugate-gradient sensitivity encoding reconstruction. Net flow curves, stroke volumes, and peak flow in the aorta were evaluated and compared to a conventional Cartesian 4D flow sequence. Additionally, flow quantities reconstructed from 50% to 100% of the self-gated 4D flow data were compared. Self-gating signals for respiratory and cardiac motion were extracted for all volunteers. Flow quantities were in agreement with the standard Cartesian scan. Mean differences in stroke volumes and peak flow of 7.6 ± 11.5 and 4.0 ± 79.9 mL/s were obtained, respectively. By retrospectively increasing breathing navigator efficiency while decreasing acquisition times (15:06-07:33 minutes), 50% of the acquired data were sufficient to measure stroke volumes with errors under 9.6 mL. The feasibility to acquire respiratory and cardiac self-gated 4D flow data at a predictable scan time was demonstrated. Magn Reson Med, 2018. © 2018 International Society for Magnetic Resonance in Medicine. © 2018 International Society for Magnetic Resonance in Medicine.

Microscopic origin of gating current fluctuations in a potassium channel voltage sensor.

Science.gov (United States)

Freites, J Alfredo; Schow, Eric V; White, Stephen H; Tobias, Douglas J

2012-06-06

Voltage-dependent ion channels open and close in response to changes in membrane electrical potential due to the motion of their voltage-sensing domains (VSDs). VSD charge displacements within the membrane electric field are observed in electrophysiology experiments as gating currents preceding ionic conduction. The elementary charge motions that give rise to the gating current cannot be observed directly, but appear as discrete current pulses that generate fluctuations in gating current measurements. Here we report direct observation of gating-charge displacements in an atomistic molecular dynamics simulation of the isolated VSD from the KvAP channel in a hydrated lipid bilayer on the timescale (10-μs) expected for elementary gating charge transitions. The results reveal that gating-charge displacements are associated with the water-catalyzed rearrangement of salt bridges between the S4 arginines and a set of conserved acidic side chains on the S1-S3 transmembrane segments in the hydrated interior of the VSD. Copyright © 2012 Biophysical Society. Published by Elsevier Inc. All rights reserved.

Efficient Nonlocal M-Control and N-Target Controlled Unitary Gate Using Non-symmetric GHZ States

Science.gov (United States)

Chen, Li-Bing; Lu, Hong

2018-03-01

Efficient local implementation of a nonlocal M-control and N-target controlled unitary gate is considered. We first show that with the assistance of two non-symmetric qubit(1)-qutrit(N) Greenberger-Horne-Zeilinger (GHZ) states, a nonlocal 2-control and N-target controlled unitary gate can be constructed from 2 local two-qubit CNOT gates, 2 N local two-qutrit conditional SWAP gates, N local qutrit-qubit controlled unitary gates, and 2 N single-qutrit gates. At each target node, the two third levels of the two GHZ target qutrits are used to expose one and only one initial computational state to the local qutrit-qubit controlled unitary gate, instead of being used to hide certain states from the conditional dynamics. This scheme can be generalized straightforwardly to implement a higher-order nonlocal M-control and N-target controlled unitary gate by using M non-symmetric qubit(1)-qutrit(N) GHZ states as quantum channels. Neither the number of the additional levels of each GHZ target particle nor that of single-qutrit gates needs to increase with M. For certain realistic physical systems, the total gate time may be reduced compared with that required in previous schemes.

Gated viewing and high-accuracy three-dimensional laser radar

DEFF Research Database (Denmark)

Busck, Jens; Heiselberg, Henning

2004-01-01

, a high PRF of 32 kHz, and a high-speed camera with gate times down to 200 ps and delay steps down to 100 ps. The electronics and the software also allow for gated viewing with automatic gain control versus range, whereby foreground backscatter can be suppressed. We describe our technique for the rapid...

Nonlocal multi-target controlled–controlled gate using Greenberger–Horne–Zeilinger channel and qutrit catalysis

International Nuclear Information System (INIS)

Chen Li-Bing; Lu Hong

2015-01-01

We present a scheme for implementing locally a nonlocal N-target controlled–controlled gate with unit probability of success by harnessing two (N+1)-qubit Greenberger–Horne–Zeilinger (GHZ) states as quantum channel and N qutrits as catalyser. The quantum network that implements this nonlocal (N+2)-body gate is built entirely of local single-body and two-body gates, and has only (3N+2) two-body gates. This result suggests that both the computational depth of quantum network and the quantum resources required to perform this nonlocal gate might be significantly reduced. This scheme can be generalized straightforwardly to implement a nonlocal N-target and M-control qubits gate. (paper)

Extension of a data-driven gating technique to 3D, whole body PET studies

International Nuclear Information System (INIS)

Schleyer, Paul J; O'Doherty, Michael J; Marsden, Paul K

2011-01-01

Respiratory gating can be used to separate a PET acquisition into a series of near motion-free bins. This is typically done using additional gating hardware; however, software-based methods can derive the respiratory signal from the acquired data itself. The aim of this work was to extend a data-driven respiratory gating method to acquire gated, 3D, whole body PET images of clinical patients. The existing method, previously demonstrated with 2D, single bed-position data, uses a spectral analysis to find regions in raw PET data which are subject to respiratory motion. The change in counts over time within these regions is then used to estimate the respiratory signal of the patient. In this work, the gating method was adapted to only accept lines of response from a reduced set of axial angles, and the respiratory frequency derived from the lung bed position was used to help identify the respiratory frequency in all other bed positions. As the respiratory signal does not identify the direction of motion, a registration-based technique was developed to align the direction for all bed positions. Data from 11 clinical FDG PET patients were acquired, and an optical respiratory monitor was used to provide a hardware-based signal for comparison. All data were gated using both the data-driven and hardware methods, and reconstructed. The centre of mass of manually defined regions on gated images was calculated, and the overall displacement was defined as the change in the centre of mass between the first and last gates. The mean displacement was 10.3 mm for the data-driven gated images and 9.1 mm for the hardware gated images. No significant difference was found between the two gating methods when comparing the displacement values. The adapted data-driven gating method was demonstrated to successfully produce respiratory gated, 3D, whole body, clinical PET acquisitions.

Oscillation of Critical Current by Gate Voltage in Cooper Pair Transistor

International Nuclear Information System (INIS)

Kim, N.; Cheong, Y.; Song, W.

2010-01-01

We measured the critical current of a Cooper pair transistor consisting of two Josephson junctions and a gate electrode. The Cooper pair transistors were fabricated by using electron-beam lithography and double-angle evaporation technique. The Gate voltage dependence of critical current was measured by observing voltage jumps at various gate voltages while sweeping bias current. The observed oscillation was 2e-periodic, which shows the Cooper pair transistor had low level of quasiparticle poisoning.

The East Garrington Trench and Gate system: it works

International Nuclear Information System (INIS)

Bowles, M.; Rimbey, S.; Bentley, L.; Thomas, D.; Hoyne, B.

1997-01-01

A 'trench and gate' system (a modification of the 'funnel and gate' system) has been installed at the Amoco-operated East Garrington gas plant in Alberta to provide long-term remediation for treating contaminated groundwater plumes hosted by low hydraulic conductivity sediments. Modification to the funnel and gate design includes an up gradient high hydraulic conductivity trench and a down gradient infiltration gallery which was found to be effective in biodegrading BTEX (benzene, toluene, ethylbenzene and xylene) compounds. A comprehensive monitoring program was set up to characterize the groundwater flow system. Several indigenous hydrocarbon degrading organisms have been identified. It was shown that locally, under aerobic conditions, phosphorus was the limiting nutrient. 13 refs., 3 tabs., 10 figs

Identification of the gate regions in the primary structure of the secretin pIV.

Science.gov (United States)

Spagnuolo, Julian; Opalka, Natacha; Wen, Wesley X; Gagic, Dragana; Chabaud, Elodie; Bellini, Pierdomenico; Bennett, Matthew D; Norris, Gillian E; Darst, Seth A; Russel, Marjorie; Rakonjac, Jasna

2010-04-01

Secretins are a family of large bacterial outer membrane channels that serve as exit ports for folded proteins, filamentous phage and surface structures. Despite the large size of their substrates, secretins do not compromise the barrier function of the outer membrane, implying a gating mechanism. The region in the primary structure that forms the putative gate has not previously been determined for any secretin. To identify residues involved in gating the pIV secretin of filamentous bacteriophage f1, we used random mutagenesis of the gene followed by positive selection for mutants with compromised barrier function ('leaky' mutants). We identified mutations in 34 residues, 30 of which were clustered into two regions located in the centre of the conserved C-terminal secretin family domain: GATE1 (that spanned 39 residues) and GATE2 (that spanned 14 residues). An internal deletion constructed in the GATE2 region resulted in a severely leaky phenotype. Three of the four remaining mutations are located in the region that encodes the N-terminal, periplasmic portion of pIV and could be involved in triggering gate opening. Two missense mutations in the 24-residue region that separates GATE1 and GATE2 were also constructed. These mutant proteins were unstable, defective in multimerization and non-functional.

Fully automated intrinsic respiratory and cardiac gating for small animal CT

Energy Technology Data Exchange (ETDEWEB)

Kuntz, J; Baeuerle, T; Semmler, W; Bartling, S H [Department of Medical Physics in Radiology, German Cancer Research Center, Heidelberg (Germany); Dinkel, J [Department of Radiology, German Cancer Research Center, Heidelberg (Germany); Zwick, S [Department of Diagnostic Radiology, Medical Physics, Freiburg University (Germany); Grasruck, M [Siemens Healthcare, Forchheim (Germany); Kiessling, F [Chair of Experimental Molecular Imaging, RWTH-Aachen University, Medical Faculty, Aachen (Germany); Gupta, R [Department of Radiology, Massachusetts General Hospital, Boston, MA (United States)], E-mail: j.kuntz@dkfz.de

2010-04-07

A fully automated, intrinsic gating algorithm for small animal cone-beam CT is described and evaluated. A parameter representing the organ motion, derived from the raw projection images, is used for both cardiac and respiratory gating. The proposed algorithm makes it possible to reconstruct motion-corrected still images as well as to generate four-dimensional (4D) datasets representing the cardiac and pulmonary anatomy of free-breathing animals without the use of electrocardiogram (ECG) or respiratory sensors. Variation analysis of projections from several rotations is used to place a region of interest (ROI) on the diaphragm. The ROI is cranially extended to include the heart. The centre of mass (COM) variation within this ROI, the filtered frequency response and the local maxima are used to derive a binary motion-gating parameter for phase-sensitive gated reconstruction. This algorithm was implemented on a flat-panel-based cone-beam CT scanner and evaluated using a moving phantom and animal scans (seven rats and eight mice). Volumes were determined using a semiautomatic segmentation. In all cases robust gating signals could be obtained. The maximum volume error in phantom studies was less than 6%. By utilizing extrinsic gating via externally placed cardiac and respiratory sensors, the functional parameters (e.g. cardiac ejection fraction) and image quality were equivalent to this current gold standard. This algorithm obviates the necessity of both gating hardware and user interaction. The simplicity of the proposed algorithm enables adoption in a wide range of small animal cone-beam CT scanners.

Molecular sensors and molecular logic gates

International Nuclear Information System (INIS)

Georgiev, N.; Bojinov, V.

2013-01-01

Full text: The rapid grow of nanotechnology field extended the concept of a macroscopic device to the molecular level. Because of this reason the design and synthesis of (supra)-molecular species capable of mimicking the functions of macroscopic devices are currently of great interest. Molecular devices operate via electronic and/or nuclear rearrangements and, like macroscopic devices, need energy to operate and communicate between their elements. The energy needed to make a device work can be supplied as chemical energy, electrical energy, or light. Luminescence is one of the most useful techniques to monitor the operation of molecular-level devices. This fact determinates the synthesis of novel fluorescence compounds as a considerable and inseparable part of nanoscience development. Further miniaturization of semiconductors in electronic field reaches their limit. Therefore the design and construction of molecular systems capable of performing complex logic functions is of great scientific interest now. In semiconductor devices the logic gates work using binary logic, where the signals are encoded as 0 and 1 (low and high current). This process is executable on molecular level by several ways, but the most common are based on the optical properties of the molecule switches encoding the low and high concentrations of the input guest molecules and the output fluorescent intensities with binary 0 and 1 respectively. The first proposal to execute logic operations at the molecular level was made in 1988, but the field developed only five years later when the analogy between molecular switches and logic gates was experimentally demonstrated by de Silva. There are seven basic logic gates: AND, OR, XOR, NOT, NAND, NOR and XNOR and all of them were achieved by molecules, the fluorescence switching as well. key words: fluorescence, molecular sensors, molecular logic gates

Patient training in respiratory-gated radiotherapy

International Nuclear Information System (INIS)

Kini, Vijay R.; Vedam, Subrahmanya S.; Keall, Paul J.; Patil, Sumukh; Chen, Clayton; Mohan, Radhe

2003-01-01

Respiratory gating is used to counter the effects of organ motion during radiotherapy for chest tumors. The effects of variations in patient breathing patterns during a single treatment and from day to day are unknown. We evaluated the feasibility of using patient training tools and their effect on the breathing cycle regularity and reproducibility during respiratory-gated radiotherapy. To monitor respiratory patterns, we used a component of a commercially available respiratory-gated radiotherapy system (Real Time Position Management (RPM) System, Varian Oncology Systems, Palo Alto, CA 94304). This passive marker video tracking system consists of reflective markers placed on the patient's chest or abdomen, which are detected by a wall-mounted video camera. Software installed on a PC interfaced to this camera detects the marker motion digitally and records it. The marker position as a function of time serves as the motion signal that may be used to trigger imaging or treatment. The training tools used were audio prompting and visual feedback, with free breathing as a control. The audio prompting method used instructions to 'breathe in' or 'breathe out' at periodic intervals deduced from patients' own breathing patterns. In the visual feedback method, patients were shown a real-time trace of their abdominal wall motion due to breathing. Using this, they were asked to maintain a constant amplitude of motion. Motion traces of the abdominal wall were recorded for each patient for various maneuvers. Free breathing showed a variable amplitude and frequency. Audio prompting resulted in a reproducible frequency; however, the variability and the magnitude of amplitude increased. Visual feedback gave a better control over the amplitude but showed minor variations in frequency. We concluded that training improves the reproducibility of amplitude and frequency of patient breathing cycles. This may increase the accuracy of respiratory-gated radiation therapy

Simple realization of the Fredkin gate using a series of two-body operators

International Nuclear Information System (INIS)

Chau, H.F.; Wilczek, F.

1995-01-01

The Fredkin three-bit gate is universal for computational logic, and is reversible. Classically, it is impossible to do universal computation using reversible two-bit gates only. Here we construct the Fredkin gate using a combination of six two-body reversible (quantum) operators

Correcting errors in a quantum gate with pushed ions via optimal control

DEFF Research Database (Denmark)

Poulsen, Uffe Vestergaard; Sklarz, Shlomo; Tannor, David

2010-01-01

We analyze in detail the so-called pushing gate for trapped ions, introducing a time-dependent harmonic approximation for the external motion. We show how to extract the average fidelity for the gate from the resulting semiclassical simulations. We characterize and quantify precisely all types...... of errors coming from the quantum dynamics and reveal that slight nonlinearities in the ion-pushing force can have a dramatic effect on the adiabaticity of gate operation. By means of quantum optimal control techniques, we show how to suppress each of the resulting gate errors in order to reach a high...

Scaling Trapped Ion Quantum Computers Using Fast Gates and Microtraps

Science.gov (United States)

Ratcliffe, Alexander K.; Taylor, Richard L.; Hope, Joseph J.; Carvalho, André R. R.

2018-06-01

Most attempts to produce a scalable quantum information processing platform based on ion traps have focused on the shuttling of ions in segmented traps. We show that an architecture based on an array of microtraps with fast gates will outperform architectures based on ion shuttling. This system requires higher power lasers but does not require the manipulation of potentials or shuttling of ions. This improves optical access, reduces the complexity of the trap, and reduces the number of conductive surfaces close to the ions. The use of fast gates also removes limitations on the gate time. Error rates of 10-5 are shown to be possible with 250 mW laser power and a trap separation of 100 μ m . The performance of the gates is shown to be robust to the limitations in the laser repetition rate and the presence of many ions in the trap array.

Formation of strain-induced quantum dots in gated semiconductor nanostructures

Directory of Open Access Journals (Sweden)

Ted Thorbeck

2015-08-01

Full Text Available A long-standing mystery in the field of semiconductor quantum dots (QDs is: Why are there so many unintentional dots (also known as disorder dots which are neither expected nor controllable. It is typically assumed that these unintentional dots are due to charged defects, however the frequency and predictability of the location of the unintentional QDs suggests there might be additional mechanisms causing the unintentional QDs besides charged defects. We show that the typical strains in a semiconductor nanostructure from metal gates are large enough to create strain-induced quantum dots. We simulate a commonly used QD device architecture, metal gates on bulk silicon, and show the formation of strain-induced QDs. The strain-induced QD can be eliminated by replacing the metal gates with poly-silicon gates. Thus strain can be as important as electrostatics to QD device operation operation.

SWNT array resonant gate MOS transistor.

Science.gov (United States)

Arun, A; Campidelli, S; Filoramo, A; Derycke, V; Salet, P; Ionescu, A M; Goffman, M F

2011-02-04

We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and electronic properties of SWNTs with an integrated silicon-based motion detection. Its electrical response exhibits a clear signature of the mechanical resonance of SWNT arrays (120-150 MHz) showing that these thin horizontal arrays behave as a cohesive, rigid and elastic body membrane with a Young's modulus in the order of 1-10 GPa and ultra-low mass. The resonant frequency can be tuned by the gate voltage and its dependence is well understood within the continuum mechanics framework.

SWNT array resonant gate MOS transistor

International Nuclear Information System (INIS)

Arun, A; Salet, P; Ionescu, A M; Campidelli, S; Filoramo, A; Derycke, V; Goffman, M F

2011-01-01

We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and electronic properties of SWNTs with an integrated silicon-based motion detection. Its electrical response exhibits a clear signature of the mechanical resonance of SWNT arrays (120-150 MHz) showing that these thin horizontal arrays behave as a cohesive, rigid and elastic body membrane with a Young's modulus in the order of 1-10 GPa and ultra-low mass. The resonant frequency can be tuned by the gate voltage and its dependence is well understood within the continuum mechanics framework.

Cardiac magnetic resonance: is phonocardiogram gating reliable in velocity-encoded phase contrast imaging?

International Nuclear Information System (INIS)

Nassenstein, Kai; Schlosser, Thomas; Orzada, Stephan; Ladd, Mark E.; Maderwald, Stefan; Haering, Lars; Czylwik, Andreas; Jensen, Christoph; Bruder, Oliver

2012-01-01

To assess the diagnostic accuracy of phonocardiogram (PCG) gated velocity-encoded phase contrast magnetic resonance imaging (MRI). Flow quantification above the aortic valve was performed in 68 patients by acquiring a retrospectively PCG- and a retrospectively ECG-gated velocity-encoded GE-sequence at 1.5 T. Peak velocity (PV), average velocity (AV), forward volume (FV), reverse volume (RV), net forward volume (NFV), as well as the regurgitant fraction (RF) were assessed for both datasets, as well as for the PCG-gated datasets after compensation for the PCG trigger delay. PCG-gated image acquisition was feasible in 64 patients, ECG-gated in all patients. PCG-gated flow quantification overestimated PV (Δ 3.8 ± 14.1 cm/s; P = 0.037) and underestimated FV (Δ -4.9 ± 15.7 ml; P = 0.015) and NFV (Δ -4.5 ± 16.5 ml; P = 0.033) compared with ECG-gated imaging. After compensation for the PCG trigger delay, differences were only observed for PV (Δ 3.8 ± 14.1 cm/s; P = 0.037). Wide limits of agreement between PCG- and ECG-gated flow quantification were observed for all variables (PV: -23.9 to 31.4 cm/s; AV: -4.5 to 3.9 cm/s; FV: -35.6 to 25.9 ml; RV: -8.0 to 7.2 ml; NFV: -36.8 to 27.8 ml; RF: -10.4 to 10.2 %). The present study demonstrates that PCG gating in its current form is not reliable enough for flow quantification based on velocity-encoded phase contrast gradient echo (GE) sequences. (orig.)

State-dependent changes in auditory sensory gating in different cortical areas in rats.

Directory of Open Access Journals (Sweden)

Renli Qi

Full Text Available Sensory gating is a process in which the brain's response to a repetitive stimulus is attenuated; it is thought to contribute to information processing by enabling organisms to filter extraneous sensory inputs from the environment. To date, sensory gating has typically been used to determine whether brain function is impaired, such as in individuals with schizophrenia or addiction. In healthy subjects, sensory gating is sensitive to a subject's behavioral state, such as acute stress and attention. The cortical response to sensory stimulation significantly decreases during sleep; however, information processing continues throughout sleep, and an auditory evoked potential (AEP can be elicited by sound. It is not known whether sensory gating changes during sleep. Sleep is a non-uniform process in the whole brain with regional differences in neural activities. Thus, another question arises concerning whether sensory gating changes are uniform in different brain areas from waking to sleep. To address these questions, we used the sound stimuli of a Conditioning-testing paradigm to examine sensory gating during waking, rapid eye movement (REM sleep and Non-REM (NREM sleep in different cortical areas in rats. We demonstrated the following: 1. Auditory sensory gating was affected by vigilant states in the frontal and parietal areas but not in the occipital areas. 2. Auditory sensory gating decreased in NREM sleep but not REM sleep from waking in the frontal and parietal areas. 3. The decreased sensory gating in the frontal and parietal areas during NREM sleep was the result of a significant increase in the test sound amplitude.

An integrated bioimpedance—ECG gating technique for respiratory and cardiac motion compensation in cardiac PET

International Nuclear Information System (INIS)

Koivumäki, Tuomas; Nekolla, Stephan G; Fürst, Sebastian; Loher, Simone; Schwaiger, Markus; Vauhkonen, Marko; Hakulinen, Mikko A

2014-01-01

Respiratory motion may degrade image quality in cardiac PET imaging. Since cardiac PET studies often involve cardiac gating by ECG, a separate respiratory monitoring system is required increasing the logistic complexity of the examination, in case respiratory gating is also needed. Thus, we investigated the simultaneous acquisition of both respiratory and cardiac gating signals using II limb lead mimicking electrode configuration during cardiac PET scans of 11 patients. In addition to conventional static and ECG-gated images, bioimpedance technique was utilized to generate respiratory- and dual-gated images. The ability of the bioimpedance technique to monitor intrathoracic respiratory motion was assessed estimating cardiac displacement between end-inspiration and -expiration. The relevance of dual gating was evaluated in left ventricular volume and myocardial wall thickness measurements. An average 7.6  ±  3.3 mm respiratory motion was observed in the study population. Dual gating showed a small but significant increase (4 ml, p = 0.042) in left ventricular myocardial volume compared to plain cardiac gating. In addition, a thinner myocardial wall was observed in dual-gated images (9.3  ±  1.3 mm) compared to cardiac-gated images (11.3  ±  1.3 mm, p = 0.003). This study shows the feasibility of bioimpedance measurements for dual gating in a clinical setting. The method enables simultaneous acquisition of respiratory and cardiac gating signals using a single device with standard ECG electrodes. (paper)

Catheter-based time-gated near-infrared fluorescence/OCT imaging system

Science.gov (United States)

Lu, Yuankang; Abran, Maxime; Cloutier, Guy; Lesage, Frédéric

2018-02-01

We developed a new dual-modality intravascular imaging system based on fast time-gated fluorescence intensity imaging and spectral domain optical coherence tomography (SD-OCT) for the purpose of interventional detection of atherosclerosis. A pulsed supercontinuum laser was used for fluorescence and OCT imaging. A double-clad fiber (DCF)- based side-firing catheter was designed and fabricated to have a 23 μm spot size at a 2.2 mm working distance for OCT imaging. Its single-mode core is used for OCT, while its inner cladding transports fluorescence excitation light and collects fluorescent photons. The combination of OCT and fluorescence imaging was achieved by using a DCF coupler. For fluorescence detection, we used a time-gated technique with a novel single-photon avalanche diode (SPAD) working in an ultra-fast gating mode. A custom-made delay chip was integrated in the system to adjust the delay between the excitation laser pulse and the SPAD gate-ON window. This technique allowed to detect fluorescent photons of interest while rejecting most of the background photons, thus leading to a significantly improved signal to noise ratio (SNR). Experiments were carried out in turbid media mimicking tissue with an indocyanine green (ICG) inclusion (1 mM and 100 μM) to compare the time-gated technique and the conventional continuous detection technique. The gating technique increased twofold depth sensitivity, and tenfold SNR at large distances. The dual-modality imaging capacity of our system was also validated with a silicone-based tissue-mimicking phantom.

Experimental evaluation of IGBT junction temperature measurement via peak gate current

DEFF Research Database (Denmark)

Baker, Nick; Munk-Nielsen, Stig; Iannuzzo, Francesco

2015-01-01

Temperature sensitive electrical parameters allow junction temperature measurements on power semiconductors without modification to module packaging. The peak gate current has recently been proposed for IGBT junction temperature measurement and relies on the temperature dependent resistance...... of the gate pad. Consequently, a consideration of chip geometry and location of the gate pad is required before interpreting temperature data from this method. Results are also compared with a traditional electrical temperature measurement method: the voltage drop under low current....

Opening of the New Gate E (Reminder)

CERN Multimedia

Relations with the Host States Service

2004-01-01

Since 1 November 2004, members of the CERN personnel holding a legitimation document issued by the Swiss Federal Department of Foreign Affairs may use Gate E ("Charles de Gaulle Gate"), located at the West end of the Meyrin Site, from Monday to Friday, except on official CERN holidays, from 7.30 a.m. to 9.30 a.m. to enter the site and from 4.30 p.m. to 6.30 p.m. to leave the site. All persons using Gate E must automatically present for inspection by the Guard on duty: either their azure B-type CERN access card (the letter B precedes the identification number printed on the card); or, during a transitional period lasting until 17 December 2004, their blue C-type CERN access card (the letter C precedes the identification number printed on the card) and their legitimation document issued by the Swiss Federal Department of Foreign Affairs («Carte de légitimation» or «Attestation de fonctions»). The new azure B-type CERN access card is issued, where appropria...

Electrochemically-gated single-molecule electrical devices

International Nuclear Information System (INIS)

Guo, Shaoyin; Artés, Juan Manuel; Díez-Pérez, Ismael

2013-01-01

In the last decade, single-molecule electrical contacts have emerged as a new experimental platform that allows exploring charge transport phenomena in individual molecular blocks. This novel tool has evolved into an essential element within the Molecular Electronics field to understand charge transport processes in hybrid (bio)molecule/electrode interfaces at the nanoscale, and prospect the implementation of active molecular components into functional nanoscale optoelectronic devices. Within this area, three-terminal single-molecule devices have been sought, provided that they are highly desired to achieve full functionality in logic electronic circuits. Despite the latest experimental developments offer consistent methods to bridge a molecule between two electrodes (source and drain in a transistor notation), placing a third electrode (gate) close to the single-molecule electrical contact is still technically challenging. In this vein, electrochemically-gated single-molecule devices have emerged as an experimentally affordable alternative to overcome these technical limitations. In this review, the operating principle of an electrochemically-gated single-molecule device is presented together with the latest experimental methodologies to built them and characterize their charge transport characteristics. Then, an up-to-date comprehensive overview of the most prominent examples will be given, emphasizing on the relationship between the molecular structure and the final device electrical behaviour

Step-and-shoot prospectively ECG-gated vs. retrospectively ECG-gated with tube current modulation coronary CT angiography using 128-slice MDCT patients with chest pain: diagnostic performance and radiation dose

International Nuclear Information System (INIS)

Kim, Jeong Su; Choo, Ki Seok; Jeong, Dong Wook

2011-01-01

Background With increasing awareness for radiation exposure, the study of diagnostic accuracy of coronary CT angiography (CCTA) with low radiation dose techniques is mandatory to both radiologist and clinician. Purpose To compare diagnostic performance and effective radiation dose between step-and-shoot prospectively ECG-gated and retrospectively ECG-gated with tube current modulation (TCM) CCTA using 128-slice multidetector computed tomography (MDCT). Material and Methods We retrospectively evaluated 60 patients who underwent CCTA with either of two different low-dose techniques using 128-slice MDCT (23 patients for step-and shoot-prospectively ECG-gated and 37 patients for retrospectively ECG-gated with TCM CCTA) followed by conventional coronary angiography. All coronary arteries and all segments thereof, except anatomical variants or small size (< 1.5 mm) ones, were included in analysis. Results In per-segment analysis, sensitivity, specificity, positive predictive value, and negative predictive value were 91/96%, 95/94%, 75/73%, and 98/99% for step-and-shoot prospectively ECG-gated and retrospectively ECG gated with TCM CCTA, respectively, relative to conventional coronary angiography. Effective radiation dose were 1.75 ± 0.83 mSv, 4.91 ± 1.71 mSv in the step-and-shoot prospectively ECG-gated and retrospectively ECG-gated with TCM CCTA groups, respectively. Conclusion The two low-radiation dose CCTA techniques using 128-slice MDCT yields comparable diagnostic performance for coronary artery disease in symptomatic patients with low heart rates

Liquid–Solid Dual-Gate Organic Transistors with Tunable Threshold Voltage for Cell Sensing

KAUST Repository

Zhang, Yu

2017-10-17

Liquid electrolyte-gated organic field effect transistors and organic electrochemical transistors have recently emerged as powerful technology platforms for sensing and simulation of living cells and organisms. For such applications, the transistors are operated at a gate voltage around or below 0.3 V because prolonged application of a higher voltage bias can lead to membrane rupturing and cell death. This constraint often prevents the operation of the transistors at their maximum transconductance or most sensitive regime. Here, we exploit a solid–liquid dual-gate organic transistor structure, where the threshold voltage of the liquid-gated conduction channel is controlled by an additional gate that is separated from the channel by a metal-oxide gate dielectric. With this design, the threshold voltage of the “sensing channel” can be linearly tuned in a voltage window exceeding 0.4 V. We have demonstrated that the dual-gate structure enables a much better sensor response to the detachment of human mesenchymal stem cells. In general, the capability of tuning the optimal sensing bias will not only improve the device performance but also broaden the material selection for cell-based organic bioelectronics.

Liquid-Solid Dual-Gate Organic Transistors with Tunable Threshold Voltage for Cell Sensing.

Science.gov (United States)

Zhang, Yu; Li, Jun; Li, Rui; Sbircea, Dan-Tiberiu; Giovannitti, Alexander; Xu, Junling; Xu, Huihua; Zhou, Guodong; Bian, Liming; McCulloch, Iain; Zhao, Ni

2017-11-08

Liquid electrolyte-gated organic field effect transistors and organic electrochemical transistors have recently emerged as powerful technology platforms for sensing and simulation of living cells and organisms. For such applications, the transistors are operated at a gate voltage around or below 0.3 V because prolonged application of a higher voltage bias can lead to membrane rupturing and cell death. This constraint often prevents the operation of the transistors at their maximum transconductance or most sensitive regime. Here, we exploit a solid-liquid dual-gate organic transistor structure, where the threshold voltage of the liquid-gated conduction channel is controlled by an additional gate that is separated from the channel by a metal-oxide gate dielectric. With this design, the threshold voltage of the "sensing channel" can be linearly tuned in a voltage window exceeding 0.4 V. We have demonstrated that the dual-gate structure enables a much better sensor response to the detachment of human mesenchymal stem cells. In general, the capability of tuning the optimal sensing bias will not only improve the device performance but also broaden the material selection for cell-based organic bioelectronics.

Bill Gates eyes healthcare market.

Science.gov (United States)

Dunbar, C

1995-02-01

The entrepreneurial spirit is still top in Bill Gates' mind as he look toward healthcare and other growth industries. Microsoft's CEO has not intention of going the way of other large technology companies that became obsolete before they could compete today.

Effects of combined gate and ohmic recess on GaN HEMTs

Directory of Open Access Journals (Sweden)

Sunil Kumar

2016-09-01

Full Text Available AlGaN/GaN, because of their superior material properties, are most suitable semiconductor material for High Electron Mobility Transistors (HEMTs. In this work we investigated the hidden physics behind these materials and studied the effect of recess technology in AlGaN/GaN HEMTs. The device under investigation is simulated for different recess depth using Silvaco-Atlas TCAD. Recess technology improves the performance of AlGaN/GaN HEMTs. We considered three kinds of recess technology gate, ohmic and combination of gate and ohmic. Gate recess improves transconductance gm but it reduces the drain current Id of the device under investigation. Ohmic recess improves the transconductance gm but it introduces leakage current Ig in the device. In order to use AlGaN/GaN for high voltage operation, both the transconductance and the drain current should be reasonably high which is obtained by combining both gate and ohmic recess technologies. A good balance in transconductance and drain current is achieved by combining both gate and ohmic recess technologies without any leakage current.

Area efficient digital logic NOT gate using single electron box (SEB

Directory of Open Access Journals (Sweden)

Bahrepour Davoud

2017-01-01

Full Text Available The continuing scaling down of complementary metal oxide semiconductor (CMOS has led researchers to build new devices with nano dimensions, whose behavior will be interpreted based on quantum mechanics. Single-electron devices (SEDs are promising candidates for future VLSI applications, due to their ultra small dimensions and lower power consumption. In most SED based digital logic designs, a single gate is introduced and its performance discussed. While in the SED based circuits the fan out of designed gate circuit should be considered and measured. In the other words, cascaded SED based designs must work properly so that the next stage(s should be driven by the previous stage. In this paper, previously NOT gate based on single electron box (SEB which is an important structure in SED technology, is reviewed in order to obtain correct operation in series connections. The correct operation of the NOT gate is investigated in a buffer circuit which uses two connected NOT gate in series. Then, for achieving better performance the designed buffer circuit is improved by the use of scaling process.

Hydration properties of mechanosensitive channel pores define the energetics of gating

International Nuclear Information System (INIS)

Anishkin, A; Akitake, B; Kamaraju, K; Chiang, C-S; Sukharev, S

2010-01-01

Opening of ion channels directly by tension in the surrounding membrane appears to be the most ancient and simple mechanism of gating. Bacterial mechanosensitive channels MscL and MscS are the best-studied tension-gated nanopores, yet the key physical factors that define their gating are still hotly debated. Here we present estimations, simulations and experimental results showing that hydration of the pore might be one of the major parameters defining the thermodynamics and kinetics of mechanosensitive channel gating. We associate closing of channel pores with complete dehydration of the hydrophobic gate (occlusion by 'vapor lock') and formation of two water-vapor interfaces above and below the constriction. The opening path is the expansion of these interfaces, ultimately leading to wetting of the hydrophobic pore, which does not appear to be the exact reverse of the closing path, thus producing hysteresis. We discuss specifically the role of polar groups (glycines) buried in narrow closed conformations but exposed in the open states that change the wetting characteristics of the pore lining and stabilize conductive states of the channels.

Triggering the Electrolyte-Gated Organic Field-Effect Transistor output characteristics through gate functionalization using diazonium chemistry: Application to biodetection of 2,4-dichlorophenoxyacetic acid.

Science.gov (United States)

Nguyen, T T K; Nguyen, T N; Anquetin, G; Reisberg, S; Noël, V; Mattana, G; Touzeau, J; Barbault, F; Pham, M C; Piro, B

2018-04-26

We investigated an Electrolyte-Gated Organic Field-Effect transistor based on poly(N-alkyldiketopyrrolo-pyrrole dithienylthieno[3,2-b]thiophene) as organic semiconductor whose gate electrode was functionalized by electrografting a functional diazonium salt capable to bind an antibody specific to 2,4-dichlorophenoxyacetic acid (2,4-D), an herbicide well-known to be a soil and water pollutant. Molecular docking computations were performed to design the functional diazonium salt to rationalize the antibody capture on the gate surface. Sensing of 2,4-D was performed through a displacement immunoassay. The limit of detection was estimated at around 2.5 fM. Copyright © 2018 Elsevier B.V. All rights reserved.

Implementation of angular response function modeling in SPECT simulations with GATE

International Nuclear Information System (INIS)

Descourt, P; Visvikis, D; Carlier, T; Bardies, M; Du, Y; Song, X; Frey, E C; Tsui, B M W; Buvat, I

2010-01-01

Among Monte Carlo simulation codes in medical imaging, the GATE simulation platform is widely used today given its flexibility and accuracy, despite long run times, which in SPECT simulations are mostly spent in tracking photons through the collimators. In this work, a tabulated model of the collimator/detector response was implemented within the GATE framework to significantly reduce the simulation times in SPECT. This implementation uses the angular response function (ARF) model. The performance of the implemented ARF approach has been compared to standard SPECT GATE simulations in terms of the ARF tables' accuracy, overall SPECT system performance and run times. Considering the simulation of the Siemens Symbia T SPECT system using high-energy collimators, differences of less than 1% were measured between the ARF-based and the standard GATE-based simulations, while considering the same noise level in the projections, acceleration factors of up to 180 were obtained when simulating a planar 364 keV source seen with the same SPECT system. The ARF-based and the standard GATE simulation results also agreed very well when considering a four-head SPECT simulation of a realistic Jaszczak phantom filled with iodine-131, with a resulting acceleration factor of 100. In conclusion, the implementation of an ARF-based model of collimator/detector response for SPECT simulations within GATE significantly reduces the simulation run times without compromising accuracy. (note)

Implementation of angular response function modeling in SPECT simulations with GATE

Energy Technology Data Exchange (ETDEWEB)

Descourt, P; Visvikis, D [INSERM, U650, LaTIM, IFR SclnBioS, Universite de Brest, CHU Brest, Brest, F-29200 (France); Carlier, T; Bardies, M [CRCNA INSERM U892, Nantes (France); Du, Y; Song, X; Frey, E C; Tsui, B M W [Department of Radiology, J Hopkins University, Baltimore, MD (United States); Buvat, I, E-mail: dimitris@univ-brest.f [IMNC-UMR 8165 CNRS Universites Paris 7 et Paris 11, Orsay (France)

2010-05-07

Among Monte Carlo simulation codes in medical imaging, the GATE simulation platform is widely used today given its flexibility and accuracy, despite long run times, which in SPECT simulations are mostly spent in tracking photons through the collimators. In this work, a tabulated model of the collimator/detector response was implemented within the GATE framework to significantly reduce the simulation times in SPECT. This implementation uses the angular response function (ARF) model. The performance of the implemented ARF approach has been compared to standard SPECT GATE simulations in terms of the ARF tables' accuracy, overall SPECT system performance and run times. Considering the simulation of the Siemens Symbia T SPECT system using high-energy collimators, differences of less than 1% were measured between the ARF-based and the standard GATE-based simulations, while considering the same noise level in the projections, acceleration factors of up to 180 were obtained when simulating a planar 364 keV source seen with the same SPECT system. The ARF-based and the standard GATE simulation results also agreed very well when considering a four-head SPECT simulation of a realistic Jaszczak phantom filled with iodine-131, with a resulting acceleration factor of 100. In conclusion, the implementation of an ARF-based model of collimator/detector response for SPECT simulations within GATE significantly reduces the simulation run times without compromising accuracy. (note)

Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

Energy Technology Data Exchange (ETDEWEB)

Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin; Roy, A. -M.; Curry, Matthew Jon; Ten Eyck, Gregory A.; Manginell, Ronald P.; Wendt, Joel R.; Pluym, Tammy; Carr, Stephen M; Ward, Daniel Robert; Lilly, Michael; pioro-ladriere, michel

2017-07-01

We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down to the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.

Statistical analysis of target motion in gated lung stereotactic body radiation therapy

International Nuclear Information System (INIS)

Zhao Bo; Yang Yong; Li Tianfang; Li Xiang; Heron, Dwight E; Huq, M Saiful

2011-01-01

An external surrogate-based respiratory gating technique is a useful method to reduce target margins for the treatment of a moving lung tumor. The success of this technique relies on a good correlation between the motion of the external markers and the internal tumor as well as the repeatability of the respiratory motion. In gated lung stereotactic body radiation therapy (SBRT), the treatment time for each fraction could exceed 30 min due to large fractional dose. Tumor motion may experience pattern changes such as baseline shift during such extended treatment time. The purpose of this study is to analyze tumor motion traces in actual treatment situations and to evaluate the effect of the target baseline shift in gated lung SBRT treatment. Real-time motion data for both the external markers and tumors from 51 lung SBRT treatments with Cyberknife Synchrony technology were analyzed in this study. The treatment time is typically greater than 30 min. The baseline shift was calculated with a rolling average window equivalent to ∼20 s and subtracted from that at the beginning. The magnitude of the baseline shift and its relationship with treatment time were investigated. Phase gating simulation was retrospectively performed on 12 carefully selected treatments with respiratory amplitude larger than 5 mm and regular phases. A customized gating window was defined for each individual treatment. It was found that the baseline shifts are specific to each patient and each fraction. Statistical analysis revealed that more than 69% treatments exhibited increased baseline shifts with the lapse of treatment time. The magnitude of the baseline shift could reach 5.3 mm during a 30 min treatment. Gating simulation showed that tumor excursion was caused mainly by the uncertainties in phase gating simulation and baseline shift, the latter being the primary factor. With a 5 mm gating window, 2 out of 12 treatments in the study group showed significant tumor excursion. Baseline shifts

Hybrid Electric Power Train and Control Strategies Automotive Technology Education (GATE) Program

Energy Technology Data Exchange (ETDEWEB)

Andrew Frank

2006-05-31

Plug-in hybrid electric vehicles (PHEV) offer societal benefits through their ability to displace the use of petroleum fuels. Petroleum fuels represent a polluting and politically destabilizing energy carrier. PHEV technologies can move transportation away from petroleum fuel sources by enabling domestically generated electricity and liquids bio-fuels to serve as a carrier for transportation energy. Additionally, the All-Electric-Range (AER) offered by PHEVs can significantly reduce demand for expensive and polluting liquid fuels. The GATE funding received during the 1998 through 2004 funding cycle by the UC Davis Hybrid Electric Vehicle Center (HEVC) was used to advance and train researchers in PHEV technologies. GATE funding was used to construct a rigorous PHEV curriculum, provide financial support for HEVC researchers, and provide material support for research efforts. A rigorous curriculum was developed through the UC Davis Mechanical and Aeronautical Engineering Department to train HEVC researchers. Students' research benefited from this course work by advancing the graduate student researchers' understanding of key PHEV design considerations. GATE support assisted HEVC researchers in authoring technical articles and producing patents. By supporting HEVC researchers multiple Master's theses were written as well as journal articles and publications. The topics from these publications include Continuously Variable Transmission control strategies and PHEV cross platform controls software development. The GATE funding has been well used to advance PHEV systems. The UC Davis Hybrid Electric Vehicle Center is greatly appreciative for the opportunities GATE funding provided. The goals and objectives for the HEVC GATE funding were to nourish engineering research in PHEV technologies. The funding supplied equipment needed to allow researchers to investigate PHEV design sensitivities and to further optimize system components. Over a dozen PHEV

Gate-keeping in the Age of Information Society

DEFF Research Database (Denmark)

Andersen, Kim Normann; Medaglia, Rony; Henriksen, Helle Zinner

’ being reluctant to accept imposed standards and control from central level (top-down) but also avoiding demands from parents (and children) on transparency and accountability (bottom-up). The lack of accessibility of grades on the web can thus be seen as a classical gate-keeping mechanism evolving...... in the age of information society where expectations of end-of-gatekeeping by providing accessibility and transparency using information systems has been outnumbered by classical forces of gate-keeping....

Molecular logic gates: the past, present and future.

Science.gov (United States)

Erbas-Cakmak, Sundus; Kolemen, Safacan; Sedgwick, Adam C; Gunnlaugsson, Thorfinnur; James, Tony D; Yoon, Juyoung; Akkaya, Engin U

2018-04-03

The field of molecular logic gates originated 25 years ago, when A. P. de Silva published a seminal article in Nature. Stimulated by this ground breaking research, scientists were inspired to join the race to simulate the workings of the fundamental components of integrated circuits using molecules. The rules of this game of mimicry were flexible, and have evolved and morphed over the years. This tutorial review takes a look back on and provides an overview of the birth and growth of the field of molecular logics. Spinning-off from chemosensor research, molecular logic gates quickly proved themselves to be more than intellectual exercises and are now poised for many potential practical applications. The ultimate goal of this vein of research became clearer only recently - to "boldly go where no silicon-based logic gate has gone before" and seek out a new deeper understanding of life inside tissues and cells.

Energy-loss return gate via liquid dielectric polarization.

Science.gov (United States)

Kim, Taehun; Yong, Hyungseok; Kim, Banseok; Kim, Dongseob; Choi, Dukhyun; Park, Yong Tae; Lee, Sangmin

2018-04-12

There has been much research on renewable energy-harvesting techniques. However, owing to increasing energy demands, significant energy-related issues remain to be solved. Efforts aimed at reducing the amount of energy loss in electric/electronic systems are essential for reducing energy consumption and protecting the environment. Here, we design an energy-loss return gate system that reduces energy loss from electric/electronic systems by utilizing the polarization of liquid dielectrics. The use of a liquid dielectric material in the energy-loss return gate generates electrostatic potential energy while reducing the dielectric loss of the electric/electronic system. Hence, an energy-loss return gate can make breakthrough impacts possible by amplifying energy-harvesting efficiency, lowering the power consumption of electronics, and storing the returned energy. Our study indicates the potential for enhancing energy-harvesting technologies for electric/electronics systems, while increasing the widespread development of these systems.

Toward spin-based Magneto Logic Gate in Graphene

Science.gov (United States)

Wen, Hua; Dery, Hanan; Amamou, Walid; Zhu, Tiancong; Lin, Zhisheng; Shi, Jing; Zutic, Igor; Krivorotov, Ilya; Sham, Lu; Kawakami, Roland

Graphene has emerged as a leading candidate for spintronic applications due to its long spin diffusion length at room temperature. A universal magnetologic gate (MLG) based on spin transport in graphene has been recently proposed as the building block of a logic circuit which could replace the current CMOS technology. This MLG has five ferromagnetic electrodes contacting a graphene channel and can be considered as two three-terminal XOR logic gates. Here we demonstrate this XOR logic gate operation in such a device. This was achieved by systematically tuning the injection current bias to balance the spin polarization efficiency of the two inputs, and offset voltage in the detection circuit to obtain binary outputs. The output is a current which corresponds to different logic states: zero current is logic `0', and nonzero current is logic `1'. We find improved performance could be achieved by reducing device size and optimizing the contacts.

Molecular interactions involved in proton-dependent gating in KcsA potassium channels

Science.gov (United States)

Posson, David J.; Thompson, Ameer N.; McCoy, Jason G.

2013-01-01

The bacterial potassium channel KcsA is gated open by the binding of protons to amino acids on the intracellular side of the channel. We have identified, via channel mutagenesis and x-ray crystallography, two pH-sensing amino acids and a set of nearby residues involved in molecular interactions that influence gating. We found that the minimal mutation of one histidine (H25) and one glutamate (E118) near the cytoplasmic gate completely abolished pH-dependent gating. Mutation of nearby residues either alone or in pairs altered the channel’s response to pH. In addition, mutations of certain pairs of residues dramatically increased the energy barriers between the closed and open states. We proposed a Monod–Wyman–Changeux model for proton binding and pH-dependent gating in KcsA, where H25 is a “strong” sensor displaying a large shift in pKa between closed and open states, and E118 is a “weak” pH sensor. Modifying model parameters that are involved in either the intrinsic gating equilibrium or the pKa values of the pH-sensing residues was sufficient to capture the effects of all mutations. PMID:24218397

Multi-target-qubit unconventional geometric phase gate in a multi-cavity system.

Science.gov (United States)

Liu, Tong; Cao, Xiao-Zhi; Su, Qi-Ping; Xiong, Shao-Jie; Yang, Chui-Ping

2016-02-22

Cavity-based large scale quantum information processing (QIP) may involve multiple cavities and require performing various quantum logic operations on qubits distributed in different cavities. Geometric-phase-based quantum computing has drawn much attention recently, which offers advantages against inaccuracies and local fluctuations. In addition, multiqubit gates are particularly appealing and play important roles in QIP. We here present a simple and efficient scheme for realizing a multi-target-qubit unconventional geometric phase gate in a multi-cavity system. This multiqubit phase gate has a common control qubit but different target qubits distributed in different cavities, which can be achieved using a single-step operation. The gate operation time is independent of the number of qubits and only two levels for each qubit are needed. This multiqubit gate is generic, e.g., by performing single-qubit operations, it can be converted into two types of significant multi-target-qubit phase gates useful in QIP. The proposal is quite general, which can be used to accomplish the same task for a general type of qubits such as atoms, NV centers, quantum dots, and superconducting qubits.

Gated field-emitter cathodes for high-power microwave applications

International Nuclear Information System (INIS)

Barasch, E.F.; Demroff, H.P.; Elliott, T.S.; Kasprowicz, T.B.; Lee, B.; Mazumdar, T.; McIntyre, P.M.; Pang, Y.; Smith, D.D.; Trost, H.J.

1992-01-01

Gated field-emitter cathodes have been fabricated on silicon wafers. Two fabrication approaches have been employed: a knife-edge array and a porous silicon structure. The knife-edge array consists of a pattern of knife-edges, sharpened to ∼200 A radius, configured with an insulated metal gate structure at a gap of ∼500 A. The porous silicon cathode consists of an insulating porous layer, containing pores of ∼50 A diameter, densely spaced in the native silicon, biased for field emission by a thin gate metallization on the surface. Emission current density of 20 A/cm 2 has been obtained with only 10 V bias. Fabrication processes and test results are presented. (Author) 4 figs., tab., 12 refs

Factory Gate Pricing: An Analysis of the Dutch Retail Distribution

NARCIS (Netherlands)

H.M. le Blanc; F. Cruijssen (Frans); H.A. Fleuren; M.B.M. de Koster (René)

2004-01-01

textabstractFactory Gate Pricing (FGP) is a relatively new phenomenon in retail distribution. Under FGP, products are no longer delivered at the retailer distribution center, but collected by the retailer at the factory gates of the suppliers. Owing to both the asymmetry in the distribution networks

Factory Gate Pricing : An Analysis of the Dutch Retail Distribution

NARCIS (Netherlands)

Le Blanc, H.M.; Cruijssen, F.C.A.M.; Fleuren, H.A.; de Koster, M.B.M.

2004-01-01

Factory Gate Pricing (FGP) is a relatively new phenomenon in retail distribution.Under FGP, products are no longer delivered at the retailer distribution center, but collected by the retailer at the factory gates of the suppliers.Owing to both the asymmetry in the distribution networks (the supplier

Fabrication and characterization of V-gate AlGaN/GaN high-electron-mobility transistors

International Nuclear Information System (INIS)

Zhang Kai; Cao Meng-Yi; Chen Yong-He; Yang Li-Yuan; Wang Chong; Ma Xiao-Hua; Hao Yue

2013-01-01

V-gate GaN high-electron-mobility transistors (HEMTs) are fabricated and investigated systematically. A V-shaped recess geometry is obtained using an improved Si 3 N 4 recess etching technology. Compared with standard HEMTs, the fabricated V-gate HEMTs exhibit a 17% higher peak extrinsic transconductance due to a narrowed gate foot. Moreover, both the gate leakage and current dispersion are dramatically suppressed simultaneously, although a slight degradation of frequency response is observed. Based on a two-dimensional electric field simulation using Silvaco “ATLAS” for both standard HEMTs and V-gate HEMTs, the relaxation in peak electric field at the gate edge is identified as the predominant factor leading to the superior performance of V-gate HEMTs. (condensed matter: electronic structure, electrical, magnetic, and optical properties)