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Sample records for etched ion tracks

  1. On the structure of etched ion tracks in polymers

    Czech Academy of Sciences Publication Activity Database

    Hnatowicz, Vladimír; Vacík, Jiří; Apel, P. Yu.

    2016-01-01

    Roč. 121, APR (2016), s. 106-109 ISSN 0969-806X R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk(CZ) LM2011019 Institutional support: RVO:61389005 Keywords : polymers * ion tracks * track etching Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.315, year: 2016

  2. SAXS investigation of un-etched and etched ion tracks in polycarbonate

    Science.gov (United States)

    Hossain, U. H.; Rodriguez, M. D.; Schauries, D.; Hadley, A.; Schleberger, M.; Trautmann, C.; Mudie, S.; Kluth, P.

    2017-10-01

    Investigation of the ion track morphologies and track etching behaviour in polycarbonate (PC) films was carried out using synchrotron based small-angle X-ray scattering (SAXS) measurements. The tracks were induced by Au ions with kinetic energies of 1.7 and 2.2 GeV with applied fluences between 1 × 1010 and 1 × 1012 ions/cm2. The average radii of the un-etched tracks were studied as a function of the irradiation fluence, indicating a general ion induced degradation of the polymer, with a simultaneous increase in ion track radius from 2.6 ± 0.002 nm to 3.4 ± 0.03 nm. Chemical etching of the ion tracks in PC leads to the formation of cylindrical pores. The pore radius increases linearly with etching time. In 3 M NaOH at 55 °C, a radial etching rate of 9.2 nm/min is observed.

  3. Ion track etching revisited: I. Correlations between track parameters in aged polymers

    Science.gov (United States)

    Fink, D.; Muñoz H., G.; García A., H.; Vacik, J.; Hnatowicz, V.; Kiv, A.; Alfonta, L.

    2018-04-01

    Some yet poorly understood problems of etching of pristine and swift heavy ion track-irradiated aged polymers were treated, by applying conductometry across the irradiated foils during etching. The onset times of etchant penetration across pristine foils, and the onset times of the different etched track regimes in irradiated foils were determined for polymers of various proveniences, fluences and ages, as well as their corresponding etching speeds. From the results, correlations of the parameters with each other were deduced. The normalization of these parameters enables one to compare irradiated polymer foils of different origin and treatment with one another. In a number of cases, also polymeric gel formation and swelling occur which influence the track etching behaviour. The polymer degradation during aging influences the track etching parameters, which differ from each other on both sides of the foils. With increasing sample age, these differences increase.

  4. Symphony and cacophony in ion track etching: how to control etching results

    Czech Academy of Sciences Publication Activity Database

    Fink, Dietmar; Kiv, A.; Cruz, S. A.; Munoz, G. H.; Vacík, Jiří

    2012-01-01

    Roč. 167, č. 7 (2012), s. 527-540 ISSN 1042-0150 R&D Projects: GA AV ČR IAA200480702 Institutional support: RVO:61389005 Keywords : ion tracks * polymers * etching * diodes * resistances Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 0.502, year: 2012

  5. Etching behaviour of alpha-recoil tracks in natural dark mica studied via artificial ion tracks

    International Nuclear Information System (INIS)

    Lang, M.; Glasmacher, U.A.; Neumann, R.; Wagner, G.A.

    2003-01-01

    Alpha-recoil tracks (ARTs) created by the α-decay of U, Th, and their daughter nuclei, are used by a new dating method to determine the formation age of dark mica bearing Quaternary and Neogene volcanic rocks and the cooling age of plutonic and metamorphic rocks [Chem. Geol. 166 (2000) 127, Science 155 (1967) 1103]. The age equation combines the volumetric density of ARTs with the U and Th contents. Etching latent ARTs (diameter 30-100 nm) in the mica mineral phlogopite by HF and measuring the areal density of triangular etch pits by optical and scanning force microscopy (SFM) leads to a linear growth of ART areal density versus etching time. The ART volume density is a function of the slope of the areal density and the etching rate (v eff ). Therefore, the determination of v eff is essential for the calculation of an age value. To determine the etching parameters such as etching efficiency and v eff , phlogopite samples were irradiated with 80 keV Au ions. Irradiated surfaces were etched with 4% HF at 23±2 deg. C during successive time intervals and after each interval studied with SFM. The etching rate v eff was determined by different techniques. To evaluate the threshold of etchability, the energy losses of the Au ions and α-recoil nuclei in phlogopite were calculated with the SRIM00 code. The etching efficiency of the Au ion tracks was then used to predict the corresponding etching efficiency of the natural radioactive nuclei

  6. Influence of asymmetric etching on ion track shapes in polycarbonate

    International Nuclear Information System (INIS)

    Clochard, M.-C.; Wade, T.L.; Wegrowe, J.-E.; Balanzat, E.

    2007-01-01

    By combining low-energy ion irradiation with asymmetric etching, conical nanopores of controlled geometry can be etched in polycarbonate (PC). Cone bases vary from 0.5 to 1 μm. Top diameters down to 17 nm are reached. When etching from one side, the pH on the other side (bathed in neutral or acidic buffer) was monitored. Etching temperature ranged from 65 deg. C to 80 deg. C. Pore shape characterization was achieved by electro replication combined with SEM observation. The tip shape depended on whether an acidic buffer was used or not on the stopped side

  7. Ion track etching revisited: I. Correlations between track parameters in aged polymers

    Czech Academy of Sciences Publication Activity Database

    Fink, Dietmar; Munoz, G. H.; García Arellano, H.; Vacík, Jiří; Hnatowicz, Vladimír; Kiv, A.; Alfonta, L.

    2018-01-01

    Roč. 420, č. 4 (2018), s. 57-68 ISSN 0168-583X R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:61389005 Keywords : ion track * polymer * etching Subject RIV: BG - Nuclear, Atomic and Molecular Physics , Colliders OBOR OECD: Nuclear physics Impact factor: 1.109, year: 2016

  8. Funnel-type etched ion tracks in polymers

    Czech Academy of Sciences Publication Activity Database

    Fink, Dietmar; Vacík, Jiří; Hnatowicz, Vladimír; Munoz, G. H.; Alfonta, L.; Klinkovich, I.

    2010-01-01

    Roč. 165, č. 5 (2010), s. 343-361 ISSN 1042-0150 R&D Projects: GA AV ČR(CZ) KAN400480701 Institutional research plan: CEZ:AV0Z10480505 Keywords : tracks * polymers * etching Subject RIV: JJ - Other Materials Impact factor: 0.660, year: 2010

  9. Coupled chemical reactions in dynamic nanometric confinement: Ag2O membrane formation during ion track etching

    Czech Academy of Sciences Publication Activity Database

    Hernandez, G. M.; Cruz, S. A.; Quintero, R.; Arellano, H. G.; Fink, Dietmar; Alfonta, L.; Mandabi, Y.; Kiv, A.; Vacík, Jiří

    2013-01-01

    Roč. 168, č. 9 (2013), s. 675-695 ISSN 1042-0150 Institutional support: RVO:61389005 Keywords : track * polymers * etching * chemistry * ions * nanostructure Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.603, year: 2013

  10. Track etching model for normal incident heavy ion recording in isotropic dielectric detectors

    International Nuclear Information System (INIS)

    Membrey, F.; Chambaudet, A.; Fromm, M.; Saouli, R.

    1990-01-01

    Heavy ion recording in dielectric isotropic detectors has a wide range of applications in such areas as uranium cartography, neutron activation and fission track dating using the external detector method (EDM). It is important to have a good understanding of etch pit evolution during chemical etching. The conical model, which is very often used, is based on a constant track etching velocity (VT). Numerous experiments have shown, however, that VT varies along the damage trail. In this paper, we propose a computer-generated model which simulates the etching process for normal incident ions. The analytical form of VT must be chosen in order to describe as precisely as possible the relationship between etching time (residual range) and the VT value. The conical model only provides a primary approximation which is generally insufficient, especially when performing cartography. (author)

  11. The geometry of etched heavy ion tracks in phlogopite mica; a clear dependence on energy deposited

    International Nuclear Information System (INIS)

    Hashemi-Nezhad, S.R.

    2005-01-01

    It is shown that the etched track contour geometry in phlogopite mica depends on the extent of the radiation damage present in the track core. At low stopping power values (i.e. low radiation damage), the tracks have triangular (T) geometries while at high damage densities, track contours become polygons which are hexagonal (H) for normally incident fission fragments. For these tracks, the track contour geometry along the track can change from H to T or vice versa due to variations in the extent of radiation damage. Such geometry changes are abrupt and sudden. For fragments with dip angles less than 90 deg. , the track contour geometry can be hexagonal, irregular polygon and triangular. The observed etch figures can be explained on the basis of energy deposited by the heavy ions and thermodynamic quantities of the track-crystal system

  12. Surfactant-controlled etching of ion track nanopores and its practical applications in membrane technology

    International Nuclear Information System (INIS)

    Apel, P.Yu.; Blonskaya, I.V.; Dmitriev, S.N.; Mamonova, T.I.; Orelovitch, O.L.; Sartowska, B.; Yamauchi, Yu.

    2008-01-01

    The effect of surfactants on chemical development of ion tracks in polymers has been studied. It has been shown that surface-active agents added to an alkaline etching solution adsorb on the polymer surface at the pore entrances. This reduces the etch rate, which leads to the formation of pores tapered toward the surface. Self-assembly of surfactant molecules at the pore entrance creates a barrier for their penetration into the etched-out nanopores, whereas hydroxide ions diffuse freely. Due to this, the internal pore volume grows faster than the pore surface diameter. The ability to control pore shape is demonstrated with the fabrication of profiled nano- and micropores in polyethylene terephthalate, polycarbonate. Some earlier published data on small track-etched pores in polycarbonate (in particular, the pore diameter vs. etching time curves measured conductometrically) have been revised in light of the above findings. Adding surfactants to chemical etchants makes it possible to optimize the structure of track membranes, thus improving their retention and permeation properties. Asymmetric membranes with thin skin retention layers have been produced and their performance studied

  13. Surfactant-controlled etching of ion track nanopores and its practical applications in membrane technology

    Energy Technology Data Exchange (ETDEWEB)

    Apel, P.Yu. [Flerov Laboratory of Nuclear Reactions, Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation)], E-mail: apel@nrmail.jinr.ru; Blonskaya, I.V.; Dmitriev, S.N.; Mamonova, T.I.; Orelovitch, O.L. [Flerov Laboratory of Nuclear Reactions, Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation); Sartowska, B. [Institute of Nuclear Chemistry and Technology, Dorodna Street 16, 03-195 Warsaw (Poland); Yamauchi, Yu. [Flerov Laboratory of Nuclear Reactions, Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation)

    2008-08-15

    The effect of surfactants on chemical development of ion tracks in polymers has been studied. It has been shown that surface-active agents added to an alkaline etching solution adsorb on the polymer surface at the pore entrances. This reduces the etch rate, which leads to the formation of pores tapered toward the surface. Self-assembly of surfactant molecules at the pore entrance creates a barrier for their penetration into the etched-out nanopores, whereas hydroxide ions diffuse freely. Due to this, the internal pore volume grows faster than the pore surface diameter. The ability to control pore shape is demonstrated with the fabrication of profiled nano- and micropores in polyethylene terephthalate, polycarbonate. Some earlier published data on small track-etched pores in polycarbonate (in particular, the pore diameter vs. etching time curves measured conductometrically) have been revised in light of the above findings. Adding surfactants to chemical etchants makes it possible to optimize the structure of track membranes, thus improving their retention and permeation properties. Asymmetric membranes with thin skin retention layers have been produced and their performance studied.

  14. Crystallization of lysozyme in pores of etched heavy-ion tracks

    International Nuclear Information System (INIS)

    Dobrev, D.; Baur, D.; Neumann, R.

    2005-01-01

    Intensive studies of protein crystallization are provoked by the need to accumulate structural information and to open up novel potential applications in science and technology. This work focuses on the crystallization of hen egg white lysozyme (HEWL) in micrometer-size templates of etched swift-ion tracks produced in foils of polycarbonate, polyimide, and mica. HEWL deposition was accomplished by the salting with sodium chloride method at 20 and 6 C. The crystals overgrowing the pore orifices showed no orientation when crystallized at room temperature. At 6 C, they presented a regular habit and were uniaxially oriented on a polycarbonate substrate. Biaxial orientation was observed on polyimide membranes, and epitaxial orientation dominated on mica. However, no crystallization was observed on the mica membrane covered with a thin gold layer. The epitaxial growth of HEWL was particularly pronounced in the case of ordered substrates and low crystallization temperature, i.e. at higher supersaturation. By computer simulation it was possible to determine the surface lattice planes and thus provide the preferential crystal-growth orientation. Crystallization of lysozyme and other proteins in ion-track templates of submicrometer channels should be of high practical interest. (orig.)

  15. Electrochemical synthesis of metallic microstructures using etched ion tracks in nuclear track filters

    International Nuclear Information System (INIS)

    Sanjeev Kumar; Shyam Kumar; Rajesh Kumar; Chakravarti, K.

    2004-01-01

    Interest in nano/microstructures results from their numerous potential applications in various areas such as materials and biomedical sciences, electronics, optics, magnetism, energy storage and electrochemistry. Materials with micro/nanoscopic dimensions not only have potential technological applications in areas such as device technology and drug delivery, but also are of fundamental interest in that the properties of a material can change in this regime of transition between the bulk and molecular scales. Electrodeposition is a versatile technique combining low processing cost with ambient conditions that can be used to prepare metallic, polymeric and semiconducting microstructures. In the present work ion track membranes of Makrofol (KG) have been used as templates for synthesis of metallic microstructures using the technique of electrodeposition. (author)

  16. Coupled chemical reactions in dynamic nanometric confinement: IV. Ion transmission spectrometric analysis of nanofluidic behavior and membrane formation during track etching in polymers

    Czech Academy of Sciences Publication Activity Database

    Fink, Dietmar; Vacík, Jiří; Hnatowicz, Vladimír; Munoz, G. H.; Arellano, H. G.; Kiv, A.; Alfonta, L.

    2015-01-01

    Roč. 170, č. 3 (2015), s. 155-174 ISSN 1042-0150 R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:61389005 Keywords : ions * etching * tracks Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 0.472, year: 2015

  17. Coupled chemical reactions in dynamic nanometric confinement: V. The influence of Li+ and F- ions on etching of nuclear tracks in polymers

    Czech Academy of Sciences Publication Activity Database

    Fink, Dietmar; Hernandez, G. M.; Ruiz, N. L.; Vacík, Jiří; Hnatowicz, Vladimír; Garcia-Arellano, H.; Alfonta, L.; Kiv, A.

    2014-01-01

    Roč. 169, č. 5 (2014), s. 396-417 ISSN 1042-0150 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk(XE) LM2011019 Institutional support: RVO:61389005 Keywords : tracks * biotechnology * nanostruct * ions * etching Subject RIV: BO - Biophysics Impact factor: 0.513, year: 2014

  18. Pilot production of track etch membranes (TEMS) using heavy ion beam scanner

    International Nuclear Information System (INIS)

    Nair, J.P.; Surendran, P.; Sparrow, Hillary; Ninawe, N.G.; Bhagwat, P.V.; Acharya, N.; Kulshreshta, V.; Rajesh Kumar; Vijay, Y.K.; Kurup, M.B.

    2005-01-01

    Various methods for making TEMs were conducted at Pelletron Accelerator Facility. The technique for production using ion beam scattering was also established. This is an effort to make TEMs on pilot basis at BARC- TIFR Pelletron Accelerator using Heavy Ion Beam Scanner till large rolling mechanism is implemented

  19. Spectrometry of linear energy transfer with track-etched detectors in carbon ion beams, MONO and SOBP

    Czech Academy of Sciences Publication Activity Database

    Pachnerová Brabcová, Kateřina; Ambrožová, Iva; Spurný, František

    2011-01-01

    Roč. 143, 2-4 (2011), s. 440-444 ISSN 0144-8420. [International Symposium on Microdosimetry/15./. Verona, 25.10.2009-30.10.2009] R&D Projects: GA ČR GA205/09/0171; GA AV ČR IAA100480902 Institutional research plan: CEZ:AV0Z10480505 Keywords : particles * HIMAC * track-etched detectors Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 0.822, year: 2011

  20. Investigation of optical properties of Cu/Ni multilayer nanowires embedded in etched ion-track template

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Lu [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100049 (China); Yao, Huijun, E-mail: Yaohuijun@impcas.ac.cn [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Duan, Jinglai; Chen, Yonghui [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Lyu, Shuangbao [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100049 (China); Maaz, Khan [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Nanomaterials Research Group, Physics Division, PINSTECH, Nilore 45650, Islamabad (Pakistan); Mo, Dan [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Liu, Jie, E-mail: J.Liu@impcas.ac.cn [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Sun, Youmei; Hou, Mingdong [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

    2016-12-01

    Graphical abstract: The schematic diagram of measurement of extinction spectra of Cu/Ni multilayer nanowire arrays embedded in the template after removing the gold/copper substrate. - Highlights: • The optical properties of Cu/Ni multilayer nanowire arrays were first investigated by UV/Vis/NIR spectrometer and it was confirmed that the extinction peaks strongly related to the periodicity of the multilayer nanowire. • The Ni segment was thought as a kind of impurity which can change the surface electron distribution and thereby the extinction peaks of nanowire. • Current work supplied the clear layer thickness information of Cu and Ni in Cu/Ni multilayer nanowire with TEM and EDS line-scan profile analysis. - Abstract: For understanding the interaction between light and noble/magnetism multilayer nanowires, Cu/Ni multilayer nanowires are fabricated by a multi-potential step deposition technique in etched ion-track polycarbonate template. The component and the corresponding layer thickness of multilayer nanowire are confirmed by TEM and EDS line-scan analysis. By tailoring the nanowire diameter, the Cu layer thickness and the periodicity of the nanowire, the extinction spectral of nanowire arrays exhibit an extra sensitivity to the change of structural parameters. The resonance wavelength caused by surface plasmon resonance increases obviously with increasing the nanowire diameter, the Cu layer thickness and the periodicity. The observations in our work can be explained by the “impurity effect” and coupled effect and can also be optimized for developing optical devices based on multilayer nanowires.

  1. Conformal SiO2 coating of sub-100 nm diameter channels of polycarbonate etched ion-track channels by atomic layer deposition

    Directory of Open Access Journals (Sweden)

    Nicolas Sobel

    2015-02-01

    Full Text Available Polycarbonate etched ion-track membranes with about 30 µm long and 50 nm wide cylindrical channels were conformally coated with SiO2 by atomic layer deposition (ALD. The process was performed at 50 °C to avoid thermal damage to the polymer membrane. Analysis of the coated membranes by small angle X-ray scattering (SAXS reveals a homogeneous, conformal layer of SiO2 in the channels at a deposition rate of 1.7–1.8 Å per ALD cycle. Characterization by infrared and X-ray photoelectron spectroscopy (XPS confirms the stoichiometric composition of the SiO2 films. Detailed XPS analysis reveals that the mechanism of SiO2 formation is based on subsurface crystal growth. By dissolving the polymer, the silica nanotubes are released from the ion-track membrane. The thickness of the tube wall is well controlled by the ALD process. Because the track-etched channels exhibited diameters in the range of nanometres and lengths in the range of micrometres, cylindrical tubes with an aspect ratio as large as 3000 have been produced.

  2. Surfactant-enhanced control of track-etch pore morphology

    International Nuclear Information System (INIS)

    Apel', P.Yu.; Blonskaya, I.V.; Didyk, A.Yu.; Dmitriev, S.N.; Orelovich, O.L.; Samojlova, L.I.; Vutsadakis, V.A.; Root, D.

    2000-01-01

    The influence of surfactants on the process of chemical development of ion tracks in polymers is studied. Based on the experimental data, a mechanism of the surfactant effect on the track-etch pore morphology is proposed. In the beginning of etching the surfactant is adsorbed on the surface and creates a layer that is quasi-solid and partially protects the surface from the etching agent. However, some etchant molecules diffuse through the barrier and react with the polymer surface. This results in the formation of a small hole at the entrance to the ion track. After the hole has attained a few annometers in diameter, the surfactant molecules penetrate into the track and cover its walls. Further diffusion of the surfactant into the growing pore is hindered. The adsorbed surfactant layer is not permeable for large molecules. In contrast, small alkali molecules and water molecules diffuse into the track and provide the etching process enlarging the pore. At this stage the transport of the surfactant into the pore channel can proceed only due to the lateral diffusion in the adsorbed layer. The volume inside the pore is free of surfactant molecules and grows at a higher rate than pore entrance. After a more prolonged etching the bottle-like (or 'cigar-like') pore channels are formed. The bottle-like shape of the pore channels depends on the etching conditions such as alkali and surfactant concentration, temperature, and type of the surfactant. The use of surfactants enables one to produce track-etch membranes with improved flow rate characteristics compared with those having cylindrical pores with the same nominal pore diameters

  3. Transport through track etched polymeric blend membrane

    Indian Academy of Sciences (India)

    Polymer blends of polycarbonate (PC) and polysulphone (PSF) having thickness, 27 m, are prepared by solution cast method. The transport properties of pores in a blend membrane are examined. The pores were produced in this membrane by a track etching technique. For this purpose, a thin polymer membrane was ...

  4. A novel method for observation by unaided eyes of nitrogen ion tracks and angular distribution in a plasma focus device using 50 Hz–HV electrochemically-etched polycarbonate detectors

    International Nuclear Information System (INIS)

    Sohrabi, M.; Habibi, M.; Roshani, G.H.; Ramezani, V.

    2012-01-01

    A novel ion detection method has been developed and studied in this paper for the first time to detect and observe tracks of nitrogen ions and their angular distribution by unaided eyes in the Amirkabir 4 kJ plasma focus device (PFD). The method is based on electrochemical etching (ECE) of nitrogen ion tracks in 1 mm thick large area polycarbonate (PC) detectors. The ECE method employed a specially designed and constructed large area ECE chamber by applying a 50 Hz–high voltage (HV) generator under optimized ECE conditions. The nitrogen ion tracks and angular distribution were efficiently (constructed for this study) amplified to a point observable by the unaided eyes. The beam profile and angular distribution of nitrogen ion tracks in the central axes of the beam and two- and three-dimensional iso-ion track density distributions showing micro-beam spots were determined. The distribution of ion track density along the central axes versus angular position shows double humps around a dip at the 0° angular positions. The method introduced in this paper proved to be quite efficient for ion beam profile and characteristic studies in PFDs with potential for ion detection studies and other relevant dosimetry applications.

  5. Method of plastic track detector electrochemical etching

    International Nuclear Information System (INIS)

    D'yakov, A.A.

    1984-01-01

    The review of studies dealing with the development of the method for the electro-chemical etching (ECE) of the plastic track detectors on the base of polyethy-leneterephthalate (PET) and polycarbonate (PC) is given. Physical essence of the method, basic parameters of the processes, applied equipment and methods of measurement automation are considered. The advantages of the method over the traditional chemical etching are pointed out. Recommendations on the detector operation modes when detecting fission fragments, α-particles and fast neutrons are given. The ECE method is based on the condition that during chemical etching the high-voltage sound frequency alternating electric field is applied to the detector. In this case the detector serves as an isolating layer betWeen two vessels with etching solution in which high-voltage electrode are submerged. At a fixed electric field potential higher (over than the threshold value) at the end of the etching track cone atree-like discharge spot arises. It is shown that when PET is used for fast neutron detection it is advisable to apply for ECE the PEW solution (15g KOH+40 g C 2 H 2 OH + 45g H 2 O) the field potential should constitute 30 kVxcm -1 at the freqUency of 9 kHz. In the case of fission fragment detection Using ECE and PC the following ECE conditions are recommended: 30% KOH etcher, field potential of 10 kVxcm -1 , 2-4 kHz frequency. It is concluded that the ECE method permits considerably eXtend the sphere of plastic track detector application for detecting ionizing particles,

  6. Impact of electron irradiation on particle track etching response in ...

    Indian Academy of Sciences (India)

    Scan- ning electron microscopy of etched samples further revealed the surface damage in these irradiated. PADCs. Keywords. 2 MeV electron; 140 MeV. ¾. Si; PADC; dose-dependent track registration properties; bulk etch-rate; etching response; critical angle of etching; detection efficiency; scanning electron microscopy.

  7. Selective capillary diffusion of equimolar H2/D2 gas mixtures through etched ion track membranes prepared from polyethylene terephthalate and polyimide

    International Nuclear Information System (INIS)

    Schmidt, K.; Angert, N.; Trautmann, C.

    1996-01-01

    The selective capillary diffusion of equimolar H 2 /D 2 gas mixtures through ion track membranes prepared from polyethylene terephthalate and polyimide was investigated at a temperature of 293 K, a primary pressure of 0.15 MPa and a secondary pressure of 10 -4 MPa. Different values of the separation factor Z(H 2 /D 2 ) between experiment and computer simulation exists in the case of polyethylene terephthalate ion track membranes because of multiple pores. Membranes for which multiple pores were reduced by varying the irradiation angle showed an increased separation factor. The separation factor is a function of the pore diameter. This is shown for polyimide ion track membranes with a pore size in the range of 0.17 and 0.5 μm. After grafting with styrene the separation factor increased, indicating grafting within the pores. (orig.)

  8. Reactive ion etching of microphotonic structures

    International Nuclear Information System (INIS)

    Du, J.; Glasscock, J.; Vanajek, J.; Savvides, N.

    2004-01-01

    Full text: Fabrication of microphotonic structures such as planar waveguides and other periodic structures based on silicon technology has become increasingly important due to the potential for integration of planar optical devices. We have fabricated various periodic microstructures on silicon wafers using standard optical lithography and reactive ion etching (RIE). For optical applications the surface roughness and the sidewall angle or steepness of microstructures are the most critical factors. In particular, sidewall roughness of the etched waveguide core accounts for most of the optical propagation loss. We show that by varying the main RIE parameters such as gas pressure, RF power and CF 4 /Ar/O 2 gas composition it is possible to produce microstructures with near-vertical sidewalls and very smooth surfaces. In addition to plasma etching conditions, poor edge quality of the mask often causes sidewall roughness. We employed Ni/Cr metal masks in these experiments for deep etching, and used Ar + ion milling instead of wet chemical etching to open the mask. This improves the edge quality of the mask and ultimately results in smooth sidewalls

  9. Preparation of Track Etch Membrane Filters Using Polystyrene Film

    International Nuclear Information System (INIS)

    Kaewsaenee, Jerawut; Ratanatongchai, Wichian; Supaphol, Pitt; Visal-athaphand, Pinpan

    2007-08-01

    Full text: Polystyrene nuclear track etch membrane filters was prepared by exposed 13 .m thin film polystyrene with fission fragment. Nuclear latent track was enlarged to through hole on the film by etching with 80 o C 40% H 2 SO 4 with K 2 Cr 2 O 7 solution for 6-10 hour. The hole size was depend on concentration of etching solution and etching time with 1.3-3.4 .m hole diameter. The flow rate test of water was 0.79-1.56 mm cm-2 min-1 at 109.8-113.7 kPa pressure

  10. Xe- and U-tracks in apatite and muscovite near the etching threshold

    Energy Technology Data Exchange (ETDEWEB)

    Wauschkuhn, Bastian, E-mail: wauschku@geo.tu-freiberg.de [Geologie, Technische Universität Bergakademie Freiberg (Germany); Jonckheere, Raymond [Geologie, Technische Universität Bergakademie Freiberg (Germany); Mineralogie en Petrologie, Geologie en Bodemkunde, Universiteit Gent (Belgium); Ratschbacher, Lothar [Geologie, Technische Universität Bergakademie Freiberg (Germany)

    2015-01-15

    Ion irradiation of a wedge-shaped Durango apatite backed by a mica detector allows investigating ion track ranges and etching properties at different points along the tracks. Transmission profiles obtained by irradiation with 2 × 10{sup 6} cm{sup −2} 11.1 MeV/amu {sup 132}Xe and 2 × 10{sup 6} cm{sup −2} 11.1 MeV/amu {sup 238}U parallel to the apatite c-axis correspond to ranges calculated with SRIM (Xe: 76.3 μm; U: 81.1 μm). However, the measured profiles show much greater etchable track-length variations than the calculated longitudinal straggles. The probable cause is that the length deficit exhibits significant variation from track to track. The measured length deficit in muscovite is in agreement with most existing data. In contrast, the length deficit in apatite appears to be close to zero, which is in conflict with all earlier estimates. This probably results from the etching properties of the apatite basal face, which permit surface-assisted sub-threshold etching of track sections in the nuclear stopping regime. These sections are not accessible from the opposite direction, i.e. by etching towards the endpoint of the tracks or in the direction of the ion beam. This conclusion is supported by the fact that linear dislocations are revealed in apatite basal faces and by the observation of imperfect etch pits that are separated from the etched ion track channel by a section that appears unetched under the microscope.

  11. Etching characteristics of a CR-39 track detector at room temperature in different etching solutions

    International Nuclear Information System (INIS)

    Dajko, G.

    1991-01-01

    Investigations were carried out to discover how the etching characteristics of CR-39 detectors change with varying conditions of the etching process. Measurements were made at room temperature in pure NaOH and KOH solutions; in different alcoholic KOH solutions (PEW solution, i.e. potassium hydroxide, ethyl alcohol, water); and in NaOH and KOH solutions containing different additives. The bulk etching rate of the detector (V B ) and the V (= V T /V B ) function, i.e. track to bulk etch rates ratio, for 6.1 MeV α-particles, were measured systematically. (author)

  12. A novel room temperature-induced chemical etching (RTCE) technique for the enlargement of fission tracks in Lexan polycarbonate SSNTD

    International Nuclear Information System (INIS)

    Chavan, Vivek; Kalsi, P.C.; Manchanda, V.K.

    2011-01-01

    The chemical or electrochemical etching is an essential step to enlarge the ion-induced latent tracks in solid state nuclear track detectors (SSNTDs). In these methods, above ambient temperatures (∼60 o C) and moderately high concentrations of alkali are required for about 1-2 h to enlarge the latent tracks. Microwave induced chemical etching method is reported to reduce the etching time for alpha tracks from 3 to 4 h to 25 min for CR-39 detector. In the present work, a room temperature-induced chemical etching employing ethanolamine as a new etchant has been investigated for the first time to enlarge the fission tracks in Lexan polycarbonate SSNTD. The tracks developed in the Lexan detectors etched at room temperature using ethanolamine are compared with those etched with routinely used chemical etching (CE) technique in 6 N NaOH at 60 o C. The bulk etch and track etch rates are also reported. The detection efficiency of RTCE method is determined and compared with that of CE method. The RTCE technique is found to be simple, fast and convenient.

  13. Semi-automated, three-dimensional measurement of etched tracks in solid-state nuclear track detectors

    International Nuclear Information System (INIS)

    Price, P.B.; Krischer, W.

    1985-01-01

    We describe a new method for measuring the shapes and sizes of etched tracks in plastic or glass detectors, using a commercial digital image processing system. The method exploits the fact that in transmitted light any portion of the microscopic image of the track is in best focus when it is darkest. A minimization algorithm is used to produce a two-dimensional projected image of the three-dimensional etched track. The locus of points of maximum gradients in the image leads to a closed contour of the projected image. From this gradient image the profile, length and width of the conical etched track are automatically determined. The method is also applicable (a) to a track that penetrates a detector and has been etched until the cones from opposite surfaces are connected and (b) to a track with a curved profile due to a strongly slowing particle. The method is illustrated with measurements of tracks of 1 A GeV uranium ions in Tuffak polycarbonate and in CR-73 polycarbonate and of cosmic ray tracks in a CR-39 detector. (orig.)

  14. Ion energy distributions and sidewall profiles in reactive ion etching

    International Nuclear Information System (INIS)

    May, P.W.; Field, D.; Klemperer, D.F.; Song, Y.P.

    1993-01-01

    We present a brief resume of modelling of ion trajectories in radio frequency discharges of interest in reactive ion etching of semiconductors. The procedures for calculating the energies and angles at which ions strike the substrate surface are described. Examples of ion energy distributions (IEDs) and angular distributions (IADs) are given both for low pressure, collisionless-sheath plasmas, and for higher pressure conditions, where collisions significantly modify ion trajectories. Fast neutral particles formed in the sheath by collision processes are also considered. Computer modelling of the evolution of sidewall profiles during etch processes is discussed, and examples are given of profiles calculated using IED and IAD data both at low and high pressures. (orig.)

  15. Etched track radiometers in radon measurements: a review

    CERN Document Server

    Nikolaev, V A

    1999-01-01

    Passive radon radiometers, based on alpha particle etched track detectors, are very attractive for the assessment of radon exposure. The present review considers various devices used for measurement of the volume activity of radon isotopes and their daughters and determination of equilibrium coefficients. Such devices can be classified into 8 groups: (i) open or 'bare' detectors, (ii) open chambers, (iii) sup 2 sup 2 sup 2 Rn chambers with an inlet filter, (iv) advanced sup 2 sup 2 sup 2 Rn radiometers, (v) multipurpose radiometers, (vi) radiometers based on a combination of etched track detectors and an electrostatic field, (vii) radiometers based on etched track detectors and activated charcoal and (viii) devices for the measurement of radon isotopes and/or radon daughters by means of track parameter measurements. Some of them such as the open detector and the chamber with an inlet filter have a variety of modifications and are applied widely both in geophysical research and radon dosimetric surveys. At the...

  16. Fabrication of different pore shapes by multi-step etching technique in ion-irradiated PET membranes

    International Nuclear Information System (INIS)

    Mo, D.; Liu, J.D.; Duan, J.L.; Yao, H.J.; Latif, H.; Cao, D.L.; Chen, Y.H.; Zhang, S.X.; Zhai, P.F.; Liu, J.

    2014-01-01

    Highlights: •A new multi-step etching process for pore fabrication was proposed. •The etching process relies on variation of etchant and track annealing. •Various new pore shapes in track etched PET membranes were obtained. -- Abstract: A method for the fabrication of different pore shapes in polyethylene terephthalate (PET)-based track etched membranes (TEMs) is reported. A multi-step etching technique involving etchant variation and track annealing was applied to fabricate different pore shapes in PET membranes. PET foils of 12-μm thickness were irradiated with Bi ions (kinetic energy 9.5 MeV/u, fluence 10 6 ions/cm 2 ) at the Heavy Ion Research Facility (HIRFL, Lanzhou). The cross-sections of fundamental pore shapes (cylinder, cone, and double cone) were analyzed. Funnel-shaped and pencil-shaped pores were obtained using a two-step etching process. Track annealing was carried out in air at 180 °C for 120 min. After track annealing, the selectivity of the etching process decreased, which resulted in isotropic etching in subsequent etching steps. Rounded cylinder and rounded cone shapes were obtained by introducing a track-annealing step in the etching process. Cup and spherical funnel-shaped pores were fabricated using a three- and four-step etching process, respectively. The described multi-step etching technique provides a controllable method to fabricate new pore shapes in TEMs. Introduction of a variety of pore shapes may improve the separation properties of TEMs and enrich the series of TEM products

  17. Preparation of fluoropolymer-based ion-track membranes. Structure of latent tracks and pretreatment effect

    International Nuclear Information System (INIS)

    Yamaki, Tetsuya; Nuryanthi, Nuryanthi; Koshikawa, Hiroshi; Sawada, Shinichi; Hakoda, Teruyuki; Hasegawa, Shin; Asano, Masaharu; Maekawa, Yasunari

    2012-01-01

    High-energy heavy-ion induced damage, called latent tracks m organic polymers can sometimes be etched out chemically to give submicro- and nano-sized pores. Our focus is placed on ion-track membranes of poly(vinylidene fluoride) (PVDF), a type of fluoropolymer, which were previously considered as a matrix of polymer electrolyte fuel-cell membranes. There have been no optimized methods of preparing the PVDF-based ion-track membranes. We thus examined chemical structures of the defects created in the track, and accordingly, presented a pretreatment technique for achieving more efficient track etching. A 25 μm-thick PVDF film was bombarded with 1.1 GeV 238 U or 450 MeV 129 Xe ions. In the multi-purpose chamber, degradation processes were monitored in-situ by FT-IR spectroscopy and residual gas analysis as a function of the fluence up to 6.0 x 10 11 ions/cm 2 . The films irradiated at 8 ions/cm 2 were etched in a 9 M KOH aqueous solution at 80degC. We also performed the conductometric etching, which allows monitoring of pore evolution versus etching time by recording the electrical conductance through the membrane. At fluences above 1 x 10 10 ions/cm 2 , the film showed two new absorption bands identified as double-bond stretching vibrations of in-chain unsaturations -CH=CF- and fluorinated vinyl groups -CF 2 CH=CF 2 . These defects would result from the evolution of HF. The knowledge of the solubility in a permanganate alkaline solution and our preliminary experiment suggested the importance of oxidized tracks for the easy introduction of the etching agent. We finally found that the pretreatment with ozone could oxidize the double bonds in the tracks, thereby vigorously promoting track etching before breakthrough. (author)

  18. Preparation of Ag/Cu Janus nanowires: Electrodeposition in track-etched polymer templates

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, X.R. [Henan Key Laboratory of Ion Beam Bioengineering, Physical Engineering College, Zhenzhou University, Zhengzhou 450052 (China); Wang, C.M.; Fu, Q.B. [State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871 (China); Jiao, Z.; Wang, W.D.; Qin, G.Y. [Henan Key Laboratory of Ion Beam Bioengineering, Physical Engineering College, Zhenzhou University, Zhengzhou 450052 (China); Xue, J.M., E-mail: jmxue@pku.edu.cn [State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871 (China)

    2015-08-01

    Highlights: • In this paper, we introduce a simple method for preparation of Janus nanowires by electrodeposition. • Using ion-track-etched PC polymer templates and commercial PC track-etched membrane templates, Ag/Cu Janus nanowires fabricated by this method all have uniform size. No matter how the holes array in the template, regular or not, the nanowires prepared by this method have similar properties. • By controlling the etching time, the size of the nanowires could be controlled easily and special shape nanowires also can be prepared by this template. • The polymer template is very easy to dissolve thoroughly and has no damage to nanowires almost. It is suitable for the preparation of nanowires suspension. • This method also has better applicability for polymer templates and can be seen as a simple convenient method for the preparation of Ag/Cu Janus nanowires. - Abstract: Bimetal (Janus) nanowire has been widely used as a promising nanoscale motor. In this paper we present a highly controllable method to fabricate Ag/Cu Janus nanowires using track-etched polymer templates. Ag/Cu Janus nanowires with uniform size and stabilized structure have been successfully fabricated by electrodepositing Ag nanowires, and subsequently Cu nanowires in track-etched polymer templates. The pore size of nanopores prepared by this template is uniform and continuously controlled, so aperture of achieved nanowires are uniform and can be regulated. This polymer template can dissolve inorganic solvents that do not react with the nanowires, making it is easy to release the nanowires into solution. The nanopore shape in the track-etched templates is adjustable (e.g. conical), nanowires with more special shapes could be fabricated. Thus, these features make this simple and inexpensive method very suitable for the preparation of Janus nanowire.

  19. Geometry control of etched number tracks in dielectric materials

    International Nuclear Information System (INIS)

    Khodaai Joopari, A.

    2002-01-01

    Controlling the geometry of etched nuclear tracks in dielectric materials is important for applications of nuclear tracks microfilters, especially for p ern separation of gases an isotopes with small pores with diameters of several nanometers. In this case in order to prevent the overlap of pores, making larger ones which decrease the efficiency of perm separation, it is necessary to have cylindrical pores. where as in other cases, such as for solvent extraction using microfilters for particle identification pores with sand glass shapes are preferred. By controlling the etching conditions, i.e. the chemical composition, concentration and the temperature of the etching solution, the shapes of nuclear tracks can be controlled. In this work the general conditions for making more cardinally or move sand glass shape pores in the cases of m iea and polyvinylidene flouride (PVDF) have been determined. These general results can be used for other dielectric materials. In general decreasing the concentration and the temperature of etching solution makes more cylindrical

  20. Track-etch membranes enabled nano-/microtechnology: A review

    International Nuclear Information System (INIS)

    Chakarvarti, S.K.

    2009-01-01

    The art and science of fabricating structures with nano-/micrometric dimensions as well as precision is of the immense concern to any one investigating into nano-/microtechnology. The synergetic support of radiation and its potential in combining radiation effects with nano-/micromaterials has been recognized from the very early stages of nano-science research. In the myriad of applications and uses of nano-/microstructures, and nano particles in particular, from filtration, fabrication of biosensors, a chemical catalysis, magnetic structures, nano-electronics, MEMS, mechano-chemical conversion, quantum computing etc to name a few, radiation can play a significant role. One such potential application is track-etch membranes- a spin-off from the matter-radiation interaction. In the recent years, there has been a tremendous leap in the potential applications of metallic as well as non-metallic nano-/microstructures and materials. Nanotechnology has initiated a big hop and appears to be all set for bringing in revolution in the development and advancement of techniques involved in the synthesis and fabrication of sensors and devices. The conventional techniques for fabrication of very low dimensional wires - say quantum wires, include wet chemistry, electron beam lithography, focused ion beam techniques and atomic-beam lithography but for certain drawbacks and problems mentioned further. That has shown the ways for adopting newer alternative approaches which are relatively inexpensive, easier to handle and synergistically adorned with high efficacy. It is now well known that size of the devices and components dictate many unusual traits where quantum effects become more predominant. Quasi-one-dimensional nanostructures and materials like nanowires, fibres, tubules etc, having high aspect ratio would provide unusual and uncommon properties. Some properties like strength and hardness enhancement, dramatic changes in electrical conduction, field-ion-emission through

  1. A passive monitor for radon using electrochemical track etch detector

    International Nuclear Information System (INIS)

    Massera, G.E.; Hassib, G.M.; Piesch, E.

    1980-01-01

    A passive, inexpensive monitor for radon detection and dosimetry is described in detail. It consists of a Makrofoil track etch detector inside a diffusion chamber which is sealed by a fibreglass filter through which radon may diffuse while radon daughters and aerosols are retained on the surface of the filter. The α-particle tracks are revealed by etching the Makrofoil in KOH. The lower detection limit of the radon dosimeter is equivalent to a mean dose in the lung of 130 mrem. After an exposure period of 3 months, a mean radon concentration of 0.3 pCi/l can be detected. The instrument is intended for use in a study to measure the long-term radon exposure in buildings in West Germany. (UK)

  2. Impact of electron irradiation on particle track etching response in ...

    Indian Academy of Sciences (India)

    In the present work, attempts have been made to investigate the modification in particle track etching response of polyallyl diglycol carbonate (PADC) due to impact of 2 MeV electrons. PADC samples pre-irradiated to 1, 10, 20, 40, 60, 80 and 100 Mrad doses of 2 MeV electrons were further exposed to 140 MeV 28Si beam ...

  3. Attachment and spreadout study of 3T3 cells onto PP track etched films

    International Nuclear Information System (INIS)

    Smolko, Eduardo; Mazzei, Ruben; Tadey, Daniel; Lombardo, Daniel

    2001-01-01

    Polymer surface modifications are obtained by the application of radiation treatments and other physico-chemical methods: fission fragment (ff) irradiation and etching. The biocompatibility of the surface is then observed by cell seeding and cell adhesion experiments. Approaches to improvement of the cell adhesion are obtained by different methods: for example, in PS, cell adhesion is improved after ion implantation; in PMMA, after bombarding the polymer, the surface is reconditioned with surfactants and proteins and in PVDF, cell adhesion is assayed on nuclear tracks membranes. In this work, we obtained important cell adhesion improvements in PP films by irradiation with swift heavy ions and subsequent etching of the nuclear tracks. We use BOPP (isotactic -25 μm thickness). Irrradiations were performed with a Cf-252 californium ff source. The source has a heavy ff and a light one, with 160-200 MeV energy divided among them corresponding to ff energies between 1 and 2 MeV/amu. A chemical etching procedure consisting of a solution of sulphuric acid and chromium three oxide at 85 deg. C was used. The 3T3 NIH fibroblast cell line was used for the cell adhesion experiment. Here we report for the first time, the results of a series of experiments by varying the ff fluence and the etching time showing that attachment and spreadout of cells are very much improved in this cell line according to the number of pores and the pore size

  4. In situ ion etching in a scanning electron microscope

    International Nuclear Information System (INIS)

    Dhariwal, R.S.; Fitch, R.K.

    1977-01-01

    A facility for ion etching in a scanning electron microscope is described which incorporates a new type of electrostatic ion source and viewing of the specimen is possible within about 30 sec after terminating the ion bombardment. Artefacts produced during etching have been studied and cone formation has been followed during its growth. The instrument has provided useful structural information on metals, alloys, and sinters. However, although insulating materials, such as plastics, glass and resins, have been successfully etched, interpretation of the resultant micrographs is more difficult. Ion etching of soft biological tissues, such as the rat duodenum was found to be of considerable interest. The observed structural features arise from the selective intake of the heavy fixation elements by different parts of the tissue. Hard biological materials, such as dental tissues and restorative materials, have also been studied and the prismatic structure of the enamel and the form and distribution of the dentinal tubules have been revealed. (author)

  5. Ga+ beam lithography for nanoscale silicon reactive ion etching

    Science.gov (United States)

    Henry, M. D.; Shearn, M. J.; Chhim, B.; Scherer, A.

    2010-06-01

    By using a dry etch chemistry which relies on the highly preferential etching of silicon, over that of gallium (Ga), we show resist-free fabrication of precision, high aspect ratio nanostructures and microstructures in silicon using a focused ion beam (FIB) and an inductively coupled plasma reactive ion etcher (ICP-RIE). Silicon etch masks are patterned via Ga + ion implantation in a FIB and then anisotropically etched in an ICP-RIE using fluorinated etch chemistries. We determine the critical areal density of the implanted Ga layer in silicon required to achieve a desired etch depth for both a Pseudo Bosch (SF6/C4F8) and cryogenic fluorine (SF6/O2) silicon etching. High fidelity nanoscale structures down to 30 nm and high aspect ratio structures of 17:1 are demonstrated. Since etch masks may be patterned on uneven surfaces, we utilize this lithography to create multilayer structures in silicon. The linear selectivity versus implanted Ga density enables grayscale lithography. Limits on the ultimate resolution and selectivity of Ga lithography are also discussed.

  6. Etching behavior of fission fragment tracks in synthetic quartz and its application to neutron detection

    International Nuclear Information System (INIS)

    Sawamura, Teruko; Baba, Satoshi; Narita, Masakuni; Yamazaki, Hatsuo

    1994-01-01

    The etching behavior of fission fragment tracks in synthetic quartz plates concerning to +x, y and z planes was studied using NaOH solution as an etchant. Systematic experiments gave an optimum etching condition of 65% NaOH at 150degC suitable for track detection. Under this etching condition, following several properties were studied; the bulk etching rate, the etched track opening shape and its growth rate, the critical angle of track etching, and the irradiation effect of low LET radiation. All of three different cuts were demonstrated to be useful for plates as fission track detectors. An application to neutron detection was studied for the +x-plane of an x-cut plate. The detection sensitivity of the plane in close contact with a Th-radiator was 2.7x10 -6 tracks/fluence for 14 MeV neutrons. (author)

  7. Breakthrough in fake prevention. Nuclear track-etching

    International Nuclear Information System (INIS)

    Yan Yushun; He Xiangming; Zhang Quanrong

    1999-01-01

    Nuclear particle track-etched anti-counterfeit marking is a new weapon against fake products. The marks is manufactured by intricate high technology in state-controlled sensitive nuclear facilities which ensures that the mark can not be copied. The pattern of the mark is characterized by its permeability, and can be distinguished from fakes by using a transparent liquid (e.g. water), colored pen or chemical reagent. The technique has passed the of facial health safety examination and poses no danger of nuclear irradiation

  8. CONTRIBUTION OF DIFFERENT PARTICLES MEASURED WITH TRACK ETCHED DETECTORS ONBOARD ISS.

    Science.gov (United States)

    Ambrožová, I; Davídková, M; Brabcová, K Pachnerová; Tolochek, R V; Shurshakov, V A

    2017-09-29

    Cosmic radiation consists of primary high-energy galactic and solar particles. When passing through spacecraft walls and astronauts' bodies, the spectrum becomes even more complex due to generating of secondary particles through fragmentation and nuclear interactions. Total radiation exposure is contributed by both these components. With an advantage, space research uses track etched detectors from the group of passive detectors visualizing the tracks of particles, in this case by etching. The detectors can discriminate between various components of cosmic radiation. A method is introduced for the separation of the different types of particles according to their range using track etched detectors. The method is demonstrated using detectors placed in Russian segment of the International Space Station in 2009. It is shown that the primary high-energy heavy ions with long range contribute up to 56% of the absorbed dose and up to 50% to the dose equivalent. © The Author 2017. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  9. Ion track pores in intelligent films

    International Nuclear Information System (INIS)

    Asano, Masaharu; Yoshida, Masaru; Omichi, Hideki; Nagaoka, Noriyasu; Kubota, Hitoshi; Katakai, Ryoichi; Reber, N.; Spohr, R.

    1996-01-01

    To create an intelligent chemical valve which behaves to biological membranes, we combined the following technologies: (1) creation of intelligent gels based on pendant α-amino acids or their oligomers, (2) preparation of nuclear track films by etching chemically after heavy ion irradiation, especially preparation of cylindrical pores passed through the film, and (3) a combination of (1) and (2). The two factors, REL (Restricted Energy Loss) and radiation sensitivity [(V t /V b )-1] play an important role in formation of such cylindrical track films. In the case of CR-39 film, there were found to be REL>1.6x10 4 MeV cm 2 g -1 and (V t /V b )-1>100, respectively. The cylindrical tracks films with intelligent functions, which consist of a combination of (1) and (2), can be fabricated by two techniques, copolymerization and grafting. (author)

  10. Computer image analysis of etched tracks from ionizing radiation

    Science.gov (United States)

    Blanford, George E.

    1994-01-01

    I proposed to continue a cooperative research project with Dr. David S. McKay concerning image analysis of tracks. Last summer we showed that we could measure track densities using the Oxford Instruments eXL computer and software that is attached to an ISI scanning electron microscope (SEM) located in building 31 at JSC. To reduce the dependence on JSC equipment, we proposed to transfer the SEM images to UHCL for analysis. Last summer we developed techniques to use digitized scanning electron micrographs and computer image analysis programs to measure track densities in lunar soil grains. Tracks were formed by highly ionizing solar energetic particles and cosmic rays during near surface exposure on the Moon. The track densities are related to the exposure conditions (depth and time). Distributions of the number of grains as a function of their track densities can reveal the modality of soil maturation. As part of a consortium effort to better understand the maturation of lunar soil and its relation to its infrared reflectance properties, we worked on lunar samples 67701,205 and 61221,134. These samples were etched for a shorter time (6 hours) than last summer's sample and this difference has presented problems for establishing the correct analysis conditions. We used computer counting and measurement of area to obtain preliminary track densities and a track density distribution that we could interpret for sample 67701,205. This sample is a submature soil consisting of approximately 85 percent mature soil mixed with approximately 15 percent immature, but not pristine, soil.

  11. Artificial ion tracks in volcanic dark mica simulating natural radiation damage: A scanning force microscopy study

    International Nuclear Information System (INIS)

    Lang, M.; Glasmacher, U.A.; Moine, B.; Mueller, C.; Neumann, R.; Wagner, G.A.

    2002-01-01

    A new dating technique uses alpha-recoil tracks (ART), formed by the natural α-decay of U, Th and their daughter products, to determine the formation age of Quaternary volcanic rocks ( 6 a). Visualization of etched ART by scanning force microscopy (SFM) enables to access track densities beyond 10 8 cm -2 and thus extend the new ART-dating technique to an age range >10 6 a. In order to simulate natural radiation damage, samples of phlogopite, originating from Quaternary and Tertiary volcanic rocks of the Eifel (Germany) and Kerguelen Islands (Indian Ocean) were irradiated with U, Ni (11.4 MeV/u), Xe, Cr, Ne (1.4 MeV/u) and Bi (200 keV) ions. After irradiation and etching with HF at various etching times, phlogopite surfaces were visualized by SFM. Hexagonal etch pits are typical of U, Xe and Cr ion tracks, but the etch pits of Ni, Ne and Bi ion tracks are triangular. Surfaces irradiated with U, Xe, Cr and Ni ions do not show any significant difference between etch pit density and irradiation fluence, whereas the Ne-irradiated surface show ∼14 times less etch pit density. The etching rate v H (parallel to cleavage) depends on the chemical composition of the phlogopite. The etching rate v T ' (along the track) increases with energy loss

  12. Fabrication of beta-PVDF membranes by track etching and specific functionalization of nano-pores

    International Nuclear Information System (INIS)

    Cuscito, O.

    2008-01-01

    Poly(vinylidene fluoride)(β-PVDF) nano-porous membranes were made by chemical revealing of tracks induced from swift heavy ions irradiation. Pore opening and radii can be varied in a controllable manner with the etching time. nano-pores size in nano-meter scale (from 12 nm to 50 nm) appears to be linearly dependent to the etching time. It was then necessary to adapt the characterization tools to these membranes. Consequently, we resorted to the use of structural analysis methods (Scanning Electron Microscopy, Small Angle Neutron Scattering) and developed evaluation methods of the membranes transport properties like gas permeation and ionic diffusion. Results obtained confirm the pores opening (break through) and the hydrophobicity of material, which we have modified with hydrophilic molecules. In this precise case, the grafting of acrylic acid was initiated by the radicals still remains after track-etching (called radio-grafting). This key result was obtained by a study of Electron Paramagnetic Resonance. The labelling of introduced chemical functionalities with fluorescent probes was a very effective mean to visualize very few amounts of molecules by confocal microscopy. The radio-grafting was found specifically localized inside etched tracks. The protocol offers the possibility to create a double functionality, the one localized inside the nano-pores and the other on the surface of membranes. The modification of radio-grafting parameters (the acrylic acid concentration, solvent nature, use of transfer agent) and the chemical properties of the nano-pore walls have a direct incidence on the transport properties. (author) [fr

  13. Investigations of heavy ion tracks in polyethylene naphthalate films

    CERN Document Server

    Starosta, W; Sartowska, B; Buczkowski, M

    1999-01-01

    The heavy ion beam (with fluence 3x10 sup 8 ion/cm sup 2) from a cyclotron has been used for irradiation of thin polyethylene naphthalate (PEN) films. Latent tracks in these polymeric films have been sensitized by UV radiation and then chemically etched in NaOH solution. The etching process parameters have been controlled by the electroconductivity method. After etching, parameters of samples have been examined by SEM and bubble point methods (Coulter[reg] Porometer II instrument). Results have shown good quality of PEN track membranes with pore sizes in the range: 0.1 - 0.5 mu m. The described procedure is known for thin polyethylene terephthalate (PET) films. Taking into consideration that PEN films have got better mechanical, thermal, gas barrier as well as better chemical resistance properties in comparison with PET films, the possibility of application of such membranes is much wider.

  14. Environment-sensitive ion-track membranes

    International Nuclear Information System (INIS)

    Yoshida, Masaru

    1996-01-01

    Development of an environment-sensitive porous membrane from ion-track membranes may realize by combining the techniques of ion beam radiation and those of molecular designing and synthesis for intelligent materials. Now, the development of such membrane is progressing with an aim at selecting some specific substances and accurately control its pore size in response to any small environmental stimulus such as temperature change. The authors have been studying the molecular design, synthesis and functional expression of intelligent materials, which are called here as environment-sensitive gels. In this report, the outlines of the apparatus for the production of such porous membrane was described. An organic polymer membrane was irradiated with an ion beam and followed by chemical etching to make ion track pores. Scanning electron microscopic observation for the cross section of the membrane showed that the pore shape varies greatly depending on the ion nuclide used. The characteristics of newly produced porous membranes consisting of CR-30/A-ProDMe and polyethylene-telephtharate were investigated in respect of pore size change responding to temperature. These studies of design, synthesis and functions of such gels would enable to substitute artificial materials for the functions of human sensors. (M.N.). 54 refs

  15. Functionalized Nanoporous Track-Etched b-PVDF Membrane Electrodes for Heavy Metal Determination by Square-Wave Anodic Stripping Voltammetry

    Directory of Open Access Journals (Sweden)

    Bessbousse H.

    2013-04-01

    Full Text Available Track-etched functionalized nanoporous β-PVDF membrane electrodes, or functionalized membrane electrodes (FMEs, are electrodes made from track-etched, poly(acrylic acid (PAA functionalized nanoporous β-poly(vinylidene fluoride (β-PVDF membranes with thin porous Au films sputtered on each side as electrodes. To form the β-PVDF nanoporous membranes, β-PVDF films are irradiated by swift heavy ions. After irradiation, radical tracks are stable in the membranes. Chemical etching removes some of the radical tracks revealing nanopores. Radicals, remaining in the pores, initiate radio grafting of PAA from the pore walls of the nanoporous β-PVDF. PAA is a cation exchange polymer that adsorbs metal ions, such as Pb2+, from aqueous solutions thus concentrating the ions into the membrane. After a calibrated time the FME is transferred to an electrochemical cell for square-wave anodic stripping voltammetry analysis.

  16. Methods for increasing the etching uniformity of ion beam multiple mask

    Science.gov (United States)

    Zhang, Xiaobo; Xiong, Ying; Liu, Qiang; Tian, Yangchao

    2009-05-01

    With uniform illumination, multi-step diffractive optical elements (DOE) are fabricated with ion beam multiple mask etching technology. According to the technical process of ion beam multiple mask etching on DOE, a distribution of surface error based on LKJ-150 ion beam etching machine is presented. Numerical analysis indicates that the surface distribution of etching error results in lower performance of multi-step DOE, which consumedly reduces the uniformity of target field with uniform illumination. After each etching process, the sample i.e, multi-step DOE fabricated by LKJ-150 ion beam etching machine is measured. Through measurement data, we get the etching error. On the basis of etching error, the mask can be made. Numerical analysis shows this method can reduce the impact of surface error on the performance of DOE and increase the etching uniformity of. ion beam multiple mask

  17. Heavy-ion irradiation tracks in zircon

    International Nuclear Information System (INIS)

    Bursill, L.A.; Braunshausen, G.

    1989-01-01

    Heavy-ion irradiation (14 MeV/u Pb ions) of zircon crystals gives rise to linear latent tracks of 80x10 -10 m diameter and length 140 μm. Direct observation of the track core, by high-voltage high-resolution electron microscopy at atomic resolution, reveals a core having roughly circular cross-section, with some facetting of the core/matrix interface on [101] planes of zircon. The core diameter appears quite uniform. Conventional transmission electron microscopy (bright- and dark-field imaging) reveals an elastic strain field extending for a short distance into the zircon matrix. This appears to drop off more rapidly with distance, say 1/R 2 , than do dislocation strain fields (∼ 1/R). Analysis of the various contrast mechanisms yields the result that the core is essentially amorphous. The observations confirm directly earlier conclusions based on track etching and electrical conductivity measurements, that the irradiation damage is confirmed to a 50-100 Aangstroem core region of atomically-disordered material, with virtually no damage outside this region. Mechanisms for track production are discussed briefly, but it is concluded that the problem, which is now defined by this structural analysis, has not been fully-appreciated by condensed matter physicists. In particular a damage confinement mechanism is required, which is not intuitively obvious. Some tentative suggestions along this direction are proposed. 33 refs., 9 figs

  18. Application of a cellular automaton for the evolution of etched nuclear tracks

    International Nuclear Information System (INIS)

    Cruz-Trujillo, Leonardo de la; Hernández-Hernández, C.; Vázquez-López, C.; Zendejas-Leal, B.E.; Golzarri, I.; Espinosa, G.

    2013-01-01

    In the present work, it is demonstrated the first application of cellular automata to the growing of etched nuclear tracks. The simplest case in which conical etched tracks are gradually formed is presented, as well as a general case of time varying etching rate V t . It is demonstrated that the cellular automata elements consist in an image pattern of the latent nuclear track input cells, 16 rules for updating states, the Moore neighborhood and an algorithm of four states. - Highlights: ► We model the evolution of an etched nuclear track using cellular automata (ca). ► A cellular automaton of a conical track has 4 states and 16 transition rules. ► The ca of general tracks require a not regular mesh and the L(t) and V b parameters

  19. Freestanding nanostructures via reactive ion beam angled etching

    Directory of Open Access Journals (Sweden)

    Haig A. Atikian

    2017-05-01

    Full Text Available Freestanding nanostructures play an important role in optical and mechanical devices for classical and quantum applications. Here, we use reactive ion beam angled etching to fabricate optical resonators in bulk polycrystalline and single crystal diamond. Reported quality factors are approximately 30 000 and 286 000, respectively. The devices show uniformity across 25 mm samples, a significant improvement over comparable techniques yielding freestanding nanostructures.

  20. Ion-Bombardment of X-Ray Multilayer Coatings - Comparison of Ion Etching and Ion Assisted Deposition

    NARCIS (Netherlands)

    Puik, E. J.; van der Wiel, M. J.; Zeijlemaker, H.; Verhoeven, J.

    1991-01-01

    The effects of two forms of ion bombardment treatment on the reflectivity of multilayer X-ray coatings were compared: ion etching of the metal layers, taking place after deposition, and ion bombardment during deposition, the so-called ion assisted deposition. The ion beam was an Ar+ beam of 200 eV,

  1. Calculation of bulk etch rate’s semi-empirical equation for polymer track membranes in stationary and dynamic modes

    Directory of Open Access Journals (Sweden)

    A. Mashentseva

    2013-05-01

    Full Text Available One of the most urgent and extremely social problems in environmental safeties area in Kazakhstan is providing the population of all regions of the country with quality drinking water. Development of filter elements based on nuclear track-etch membranes may be considered as one of best solutions this problem. The values of bulk etch rate and activation energy were calculated in view the effect of temperature, alkaline solution concentration as well as stirring effect. The semi-empirical equation of the bulk etch rate for PET track membranes was calculated. As a result of theoretical and experimental studies a semi-empirical equation of the bulk etch rate VB=3.4∙1012∙C2.07∙exp(-0.825/kT for 12 microns PET film, irradiated by ions 84Kr15+ (energy of 1.75 MeV/nucleon at the heavy ion accelerator DC-60 in Astana branch of the INP NNC RK, was obtained. 

  2. High energy heavy ion tracks in bubble detectors

    CERN Document Server

    Guo, S L; Guo, H Y; Tu, C Q; Wang, Y L; Doke, T; Kato, T; Ozaki, K; Kyan, A; Piao, Y; Murakami, T

    1999-01-01

    Bubble detectors which are commonly used as neutron detectors have been demonstrated through this study to be good detectors for registration of high energy heavy ion tracks. Large size bubble detectors made in China Institute of Atomic Energy were irradiated to heavy ions Ar and C up to 650 MeV/u and 400 MeV/u, respectively. Very clear features of stringy tracks of high energy heavy ions and their fragmentations are manifested and distinguishable. A single track created by a specific high energy heavy ion is composed of a line of bubbles, which is visible by naked eyes and retained for months without reduction in size. The creation of heavy ion tracks in bubble detectors is governed by a threshold whose essence is approximately a critical value of energy loss rate (dE/dX) sub c similar to that of etch track detectors. Ranges of heavy ions in bubble detectors are apparent and predictable by existing formulas. Identification of high energy heavy ions and the applications to heavy ion physics, cosmic rays, exot...

  3. Numerical Solving Of The Track Wall Equation In LR115 Detectors Etched In Direct And Reverse Directions

    International Nuclear Information System (INIS)

    Milenkovic, B.; Stevanovic, N.; Krstic, D.

    2008-01-01

    The general equation of the track wall was solved numerically by using finite difference method and computer software MATHEMATICA. This method was applied for alpha particle tracks in LR115 detector, assuming both directions of etching, from the top and from the bottom of the sensitive layer. The equation of the track wall etched in reverse direction was derived, and has the same form as one for direct etching, with some difference in argument of V function. It has been shown that tracks diameter are larger in reverse etching when the energy is large and removed layer is relatively small. Opposite to this, tracks diameter are smaller in reverse etching when energy of alpha particle is less then 2 MeV. If removed layer is large both kinds of etching would produce tracks similar in size, but the track profile is different. (author)

  4. Damage morphology of Kr ion tracks in apatite: Dependence on dE/dX

    CERN Document Server

    Villa, F; Rebetez, M; Dubois, C; Chambaudet, A; Chevarier, A; Martin, P; Brossard, F; Blondiaux, G; Sauvage, T; Toulemonde, M

    1999-01-01

    With the aim of characterizing damage along nuclear tracks in apatite, Durango fluoroapatite monocrystals were irradiated under a high fluence sup 8 sup 6 Kr ion beam at the G.A.N.I.L. (Grand Accelerateur National d'Ions Lourds, Caen, France). The resulting irradiation damage was studied by associating CRBS spectrometry and chemical etching. By applying Poisson's law to the backscattering results, the nuclear track average effective radius R sub e was calculated for different steps along the ion path. On the other hand, the chemical etching experiments allowed us to deduce three different damaging morphologies in correspondence to the R sub e values. For the first time in apatite, it has been shown that a defect fragmentation produced along the ion paths may be detected by chemical etching. These results were also applied to fission tracks in order to quantify the damage rate and to describe the damage morphology evolution along fission fragment paths.

  5. Glucose determination using a re-usable enzyme-modified ion track membrane sensor

    Czech Academy of Sciences Publication Activity Database

    Fink, Dietmar; Klinkovich, I.; Bukelman, O.; Marks, R.S.; Kiv, A.; Fuks, D.; Fahrner, W. R.; Alfonta, L.

    2009-01-01

    Roč. 24, č. 8 (2009), s. 2702-2706 ISSN 0956-5663 Institutional research plan: CEZ:AV0Z10480505 Keywords : Glucose sensor * etched tracks * Ion track membranes Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 5.429, year: 2009

  6. Track etch parameters and annealing kinetics assessment of protons of low energy in CR-39 detector

    International Nuclear Information System (INIS)

    Jain, R.K.; Kumar, Ashok; Singh, B.K.

    2012-01-01

    Highlights: ► We calibrate CR-39 detector with very low energy protons. ► We establish linear relationship between track diameter and time/energy up to 200 keV. ► We determine activation energy of annealing using different models. ► We justify concept of single annealing activation energy in CR-39. - Abstract: In this paper threshold of the registration sensitivity of very low energy proton in CR-39 is investigated. Irradiation of CR-39 (poly-allyl-diglycol carbonate) was carried out with very low energy mono energetic protons of 20–60 keV from a mini proton accelerator. Nearly 10 4 /cm 2 fluence of protons was used. The variation of track diameter with etching time as well as proton energy response curve was carefully calibrated. The bulk and track etch rates were measured by using proton track diameters. Bulk etch rate was also measured by the thickness of removed surface layer. The thermal annealing of proton track at temperatures ranging from 100 to 200 °C in CR-39 was studied by several models. Activation energy of annealed CR-39 detectors was calculated by slope of track etch rate and temperature plot. The data of proton tracks of 200, 250 and 300 keV from 400 kV Van-de-Graaff accelerator was also used and compared with the track diameters of different energies of proton.

  7. Some aspects of the etching behavior of cellulose nitrate as track detector

    International Nuclear Information System (INIS)

    Hildebrand, D.; Reitz, G.; Buecker, H.

    1976-01-01

    Experimental results are presented to support the hypothesis that the etching velocity in cellulose nitrate detectors is dependent on the local water content of the foil. The consequence is drawn that high concentrations (> 4.7 n) of the etching solution should not be used for high precision track etching. The possibility to vary the Vsub(t)/Vsub(b) ratio is reported to have a useful application in biological experiments. Further more an influence of etch products at low NaOH concentrations was found. The cellulose nitrate detectors used in this investigation are 250 μ sheets made by Daicel, Nippon (plasticized) and 100 μ sheets made by Kodak, France (Type CA 80-15, plasticized). No qualitative differences in the etching behaviour of these two materials were obtained regarding the reported investigations, although the differences are partly large regarding other features. (orig.) [de

  8. Development of a reader for track etch detectors based on a commercially available slide scanner

    CERN Document Server

    Steele, J D; Tanner, R J; Bartlett, D T

    1999-01-01

    NRPB has operated a routine neutron personal dosimetry service based on the electrochemical etch of PADC elements since 1986. Since its inception it has used an automated reader based on a video camera and real time analysis. A new and more powerful replacement system has been developed using a commercially available photographic slide scanner. This permits a complete image of the dosemeter to be grabbed in a single scan, generating a 2592x3888 pixel file which is saved for subsequent analysis. This gives an effective pixel size of 10x10 mu m with an image of the entire dosemeter in one field of view. Custom written software subsequently analyses the image to assess the number of etched pits on the dosemeter and read the detector identification number (code). Batch scanning of up to 40 detectors is also possible using an autofeed attachment. The system can be used for electrochemically etched tracks for neutron detectors and chemically etched tracks for radon detectors.

  9. Impact of electron irradiation on particle track etching response in ...

    Indian Academy of Sciences (India)

    to increase by nearly 4 times that of pristine PADC. The electron irradiation has promoted chain scissioning in PADC, thereby converting the polymer into an easily etchable polymer. Moreover, the etching response and the detection efficiency were found to improve by electron irradiation. Scan- ning electron microscopy of ...

  10. Guided transmission of 3 keV Ne sup 7 sup + ions through nanocapillaries etched in a PET polymer

    CERN Document Server

    Stolterfoht, N; Hellhammer, R; Pesic, Z D; Fink, D; Petrov, A; Sulik, B

    2003-01-01

    We measured the transmission of 3 keV Ne sup 7 sup + ions through capillaries of 100 nm diameter and 10 mu m length produced by etching ion tracks in a polyethylene terephthalate polymer foil. The foils were tilted up to +-25 deg. for which the incident ions are forced to interact with the capillary surface. The majority of Ne sup 7 sup + ions were found to survive the transmission in their initial charge state. For tilted foils the angular distributions of the transmitted particles indicate propagation of the Ne sup 7 sup + ions parallel to the capillary axis. This capillary guiding of the Ne sup 7 sup + ion provides evidence that part of the ions deposit charges within the capillaries in a self-organizing process so that a considerable fraction of the ions is transmitted through the capillaries. A non-linear model is introduced to describe the essential features of the capillary guiding.

  11. Optimization of microwave-induced chemical etching for rapid development of neutron-induced recoil tracks in CR-39 detectors

    International Nuclear Information System (INIS)

    Sahoo, G.S.; Tripathy, S.P.; Bandyopadhyay, T.

    2014-01-01

    A systematic investigation is carried out to optimize the recently established microwave-induced chemical etching (MICE) parameters for rapid development of neutron-induced recoil tracks in CR-39 detectors. Several combinations of all available microwave powers with different etching durations were analysed to determine the most suitable etching condition. The etching duration was found to reduce with increasing microwave power and the tracks were observed at about 18, 15, 12, and 6 min for 300, 450, 600 and 900 W of microwave powers respectively compared to a few hours in chemical etching (CE) method. However, for complete development of tracks the etching duration of 30, 40, 50 and 60 min were found to be suitable for the microwave powers of 900, 600, 450 and 300 W, respectively. Temperature profiles of the etchant for all the available microwave powers at different etching durations were generated to regulate the etching process in a controlled manner. The bulk etch rates at different microwave powers were determined by 2 methods, viz., gravimetric and removed thickness methods. A logarithmic expression was used to fit the variation of bulk etch rate with microwave power. Neutron detection efficiencies were obtained for all the cases and the results on track parameters obtained with MICE technique were compared with those obtained from another detector processed with chemical etching. - Highlights: • Microwave-induced chemical etching method is optimized for rapid development of recoil tracks due to neutrons in CR-39 detector. • Several combinations of microwave powers and etching durations are investigated to standardize the suitable etching condition. • Bulk-etch rates are determined for all microwave powers by two different methods, viz. gravimetric and removed thickness method. • The method is found to be simple, effective and much faster compared to conventional chemical etching

  12. A comparative study of track registration response of Makrofol-(KG, KL and N) polycarbonate to sup 4 sup 0 Ar ions

    CERN Document Server

    Kumar, A

    1999-01-01

    In the present work a comparative study of track registration response of sup 4 sup 0 Ar ions in different types of Makrofol polycarbonates viz. Makrofol-KG, KL and N have been done. The etched track parameters viz. bulk etch rate, track etch rate, etch rate ratio, cone angle and etching efficiency were calculated. The variation of etching rates with temperature were found to be exponential and follow the Arrhenius equation. The values of activation energy for bulk and track etching were also calculated. Maximum etchable track length/range were also obtained and compared with the theoretical values obtained from computer program RANGE. From the results it is found that the polycarbonates having same chemical composition manufactured by different chemical processes have slightly different behavior

  13. Diffusion kinetics of the glucose/glucose oxidase system in swift heavy ion track-based biosensors

    Energy Technology Data Exchange (ETDEWEB)

    Fink, Dietmar, E-mail: fink@xanum.uam.mx [Nuclear Physics Institute, 25068 Řež (Czech Republic); Departamento de Fisica, Universidad Autónoma Metropolitana-Iztapalapa, PO Box 55-534, 09340 México, DF (Mexico); Vacik, Jiri; Hnatowicz, V. [Nuclear Physics Institute, 25068 Řež (Czech Republic); Muñoz Hernandez, G. [Departamento de Fisica, Universidad Autónoma Metropolitana-Iztapalapa, PO Box 55-534, 09340 México, DF (Mexico); Garcia Arrelano, H. [Departamento de Ciencias Ambientales, División de Ciencias Biológicas y de la Salud, Universidad Autónoma Metropolitana-Lerma, Av. de las Garzas No. 10, Col. El Panteón, Lerma de Villada, Municipio de Lerma, Estado de México CP 52005 (Mexico); Alfonta, Lital [Avram and Stella Goldstein-Goren Department of Biotechnology Engineering, Ben-Gurion University of the Negev, PO Box 653, Beer-Sheva 84105 (Israel); Kiv, Arik [Department of Materials Engineering, Ben-Gurion University of the Negev, PO Box 653, Beer-Sheva 84105 (Israel)

    2017-05-01

    Highlights: • Application of swift heavy ion tracks in biosensing. • Obtaining yet unknown diffusion coefficients of organic matter across etched ion tracks. • Obtaining diffusion coefficients of organics in etched ion tracks of biosensors. • Comparison with Renkin’s equation to predict the effective etched track diameter in the given experiments. - Abstract: For understanding of the diffusion kinetics and their optimization in swift heavy ion track-based biosensors, recently a diffusion simulation was performed. This simulation aimed at yielding the degree of enrichment of the enzymatic reaction products in the highly confined space of the etched ion tracks. A bunch of curves was obtained for the description of such sensors that depend only on the ratio of the diffusion coefficient of the products to that of the analyte within the tracks. As hitherto none of these two diffusion coefficients is accurately known, the present work was undertaken. The results of this paper allow one to quantify the previous simulation and hence yield realistic predictions of glucose-based biosensors. At this occasion, also the influence of the etched track radius on the diffusion coefficients was measured and compared with earlier prediction.

  14. Registration threshold for tracks of 40Ar ions in muscovite mica

    International Nuclear Information System (INIS)

    Dwivedi, K.K.; Ghosh, S.; Raju, J.

    1993-01-01

    A simple technique has been described to measure both upper and lower energy registration threshold for tracks of 40 Ar ions in muscovite mica. The etchable portions of the damage trails were etched by an inter-layer (INLAY) etching procedure. The mean value of (dE/dx) c was found to be 15.5 ± 0.5 MeV.mg -1 .cm 2 . (Author)

  15. Dopant Selective Reactive Ion Etching of Silicon Carbide

    Science.gov (United States)

    Okojie, Robert (Inventor)

    2016-01-01

    A method for selectively etching a substrate is provided. In one embodiment, an epilayer is grown on top of the substrate. A resistive element may be defined and etched into the epilayer. On the other side of the substrate, the substrate is selectively etched up to the resistive element, leaving a suspended resistive element.

  16. Controlled fabrication of ion track nanowires and channels

    Science.gov (United States)

    Spohr, Reimar; Zet, Cristian; Eberhard Fischer, Bernd; Kiesewetter, Helge; Apel, Pavel; Gunko, Igor; Ohgai, Takeshi; Westerberg, Lars

    2010-03-01

    We describe a system for fabricating prescribed numbers of ion track nanochannels and nanowires from a few hundred down to one. It consists of two parts: first, a mobile tape transport system, which, in connection with an ion beam from a heavy-ion accelerator (nuclear charge Z above 18 and specific energy between 1 and 10 MeV/nucleon) tuned down to low flux density by means of defocusing and a set of sensitive fluorescence screens, can fabricate a series of equidistant irradiation spots on a tape, whereby each spot corresponds to a preset number of ion tracks. The tape transport system uses films of 36 mm width and thicknesses between 5 and 100 μm. The aiming precision of the system depends on the diameter of the installed beam-defining aperture, which is between 50 and 500 μm. The distance between neighboring irradiation spots on the tape is variable and typically set to 25 mm. After reaching the preset number of ion counts the irradiation is terminated, the tape is marked and moved to the next position. The irradiated frames are punched out to circular membranes with the irradiation spot in the center. The second part of the setup is a compact conductometric system with 10 picoampere resolution consisting of a computer controlled conductometric cell, sealing the membrane hermetically between two chemically inert half-chambers containing electrodes and filling/flushing openings, and is encased by an electrical shield and a thermal insulation. The ion tracks can be etched to a preset diameter and the system can be programmed to electroreplicate nanochannels in a prescribed sequence of magnetic/nonmagnetic metals, alloys or semiconductors. The goal of our article is to make the scientific community aware of the special features of single-ion fabrication and to demonstrate convincingly the significance of controlled etching and electro-replication.

  17. Bulk etching characteristics of CR-39 track detectors in hydroxide solutions

    International Nuclear Information System (INIS)

    Fonseca, E.S. da; Knoefel, T.M.J.; Tavares, O.A.P.

    1983-01-01

    A systematic study of the bulk etch rate of CR-39 track detectors in KOH and NaOH aqueous solutions is presented. A number of unirradiated and non-thermally treated CR-39 samples were chemically attacked in KOH and NaOH solutions of concentration and temperature in the range 2-10 N and 50-90 0 C, respectively. From measurements of the thickness of layers removed as a function of the etching time, the bulk etch rate υ β and the induction time T ο for surface removal were obtained for each etching condition. For both NaOH and KOH solution the activation energy of the process was derived as E = 0.76 ± 0.05 eV. It was observed that the induction time decreases both with increasing normality and temperature of the solution. (author) [pt

  18. Enhancement of Particle Track Etch Rate in CR-39 by UV Exposure

    Science.gov (United States)

    Wiesner, Micah; Ume, Rubab; McLean, James; Sangster, Craig; Regan, Sean

    2015-11-01

    The use of CR-39 plastic as a Solid State Nuclear Track Detector is effective for obtaining data in high-energy particle experiments including inertial confinement fusion. To reveal particle tracks after irradiation, CR-39 is chemically etched at elevated temperatures with NaOH, producing signal pits at the nuclear track sites that are measurable by an optical microscope. CR-39 pieces sometimes also exhibit etch-induced noise, either surface features not caused by nuclear particles. When CR-39 is exposed to high intensity UV light after nuclear irradiation with 5.4 MeV alpha particles and before etching, an increase in etch rates and pit diameters is observed, though UV exposure can also increase noise. We have determined that light from a low pressure mercury vapor lamp (predominantly wavelength 253.7 nm) increases etch rates and pit diameters while causing minimal background noise. Heating CR-39 to elevated temperatures (~80 °C) during UV exposure also improves the signal-to-noise ratio for this process. Surprisingly, initial data from CR-39 irradiated with 3.4 MeV protons and exposed to UV show reduced pit diameters. This material is based in part upon work supported by the Department of Energy National Nuclear Security Administration under Award Number DE-NA0001944.

  19. Effect of helium ion beam treatment on wet etching of silicon dioxide

    Science.gov (United States)

    Petrov, Yu. V.; Grigoryev, E. A.; Sharov, T. V.; Baraban, A. P.

    2018-03-01

    We investigated the effect of helium ion beam treatment on the etching rate of silicon dioxide in a water based solution of hydrofluoric acid. A 460-nm-thick silicon dioxide film on silicon was irradiated with helium ions having energies of 20 keV and 30 keV with ion fluences ranging from 1014 cm-2 to 1017 cm-2. The dependence of the etching rate on depth was obtained and compared with the depth distribution of ion-induced defects, which was obtained from numerical simulation. Irradiation with helium ions results in an increase of the etching rate of silicon dioxide. The dependence of the etching rate on the calculated concentration of ion-induced defects is described.

  20. Inductive couple plasma reactive ion etching characteristics of TiO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Garay, Adrian Adalberto; Hwang, Su Min; Chung, Chee Won, E-mail: cwchung@inha.ac.kr

    2015-07-31

    Changes in the inductively coupled plasma reactive ion etching characteristics of TiO{sub 2} thin films in response to the addition of HBr, Cl{sub 2} and C{sub 2}F{sub 6} to Ar gas were investigated. As the HBr, Cl{sub 2} and C{sub 2}F{sub 6} concentration increased, the etch rate increased; however, the etch profile degree of anisotropy followed a different trend. As HBr concentration increased, the greatest anisotropic etch profile was obtained at 100% HBr, while the greatest anisotropic etch profile was obtained at concentrations of 25% when etching was conducted under C{sub 2}F{sub 6} and Cl{sub 2}. Field emission scanning electron microscopy revealed that 25% C{sub 2}F{sub 6} generated the greatest vertical etch profile; hence, etch parameters were varied at this concentration. The effects of rf power, dc-bias voltage and gas pressure on the etch rate and etch profile were also investigated. The etch rate and degree of anisotropy in the etch profile increased with increasing rf power and dc-bias voltage and decreasing gas pressure. X-ray photoelectron spectroscopy analysis of the films etched under a C{sub 2}F{sub 6}/Ar gas mixture revealed the existence of etch byproducts containing F (i.e. TiF{sub x}) over the film. C{sub x}F{sub y} compounds were not detected on the film surface, probably due to contamination with atmospheric carbon. - Highlights: • Reactive ion etching of TiO{sub 2} films under HBr, C{sub 2}F{sub 6}, and Cl{sub 2} gases was studied. • Etch rate and etch profile of TiO{sub 2} films were investigated under each gas chemistry. • The highest degree of anisotropy was achieved at 25% C{sub 2}F{sub 6}/Ar. • Strong etch conditions at 25% C{sub 2}F{sub 6}/Ar increased etch rate and degree of anisotropy. • X-ray photoelectron spectroscopy revealed the existence of F-containing etch residues.

  1. Upgrading of LET track-etch spectrometer calibration: Calibration and uncertainty analysis

    Czech Academy of Sciences Publication Activity Database

    Spurný, František; Jadrníčková, Iva; Bamblevski, V. P.; Molokanov, A. G.

    2005-01-01

    Roč. 40, 2-6 (2005), s. 343-346 ISSN 1350-4487 R&D Projects: GA ČR GA202/04/0795 Keywords : LET spectrometer * heavy charged particles * track etch detectors Subject RIV: BO - Biophysics Impact factor: 1.023, year: 2005

  2. Image formation in track-etch detectors: Pt. 4

    International Nuclear Information System (INIS)

    Ilic, Radomir; Najzer, Mitja

    1990-01-01

    The radiographic performance of solid state nuclear track detectors was analysed with respect to image quality. Image quality is expressed in terms of three image quality factors: contrast or gradient of the detector, image unsharpness and detail discernment. Equations for the image quality factors were derived from the radiographic transfer function, taking into account image inhomogeneity caused by statistical fluctuations of track density. To find optimal radiographic conditions for a given application, a single quantity called the figure of radiographic merit was defined. It is expressed as the weighted product of the image quality factors. It was found that optimum image quality of a balanced image, characterized by equal importance of all three image quality factors, is obtained at an exposure value (defined as the product of the average visible track area and track density) of unity. (author)

  3. Formation of biaxial texture in metal films by selective ion beam etching

    Energy Technology Data Exchange (ETDEWEB)

    Park, S.J. [Department of Materials Science and Engineering, University of Florida, 106 Rhines Hall, P.O. Box 116400, Gainesville, FL 32611 (United States); Norton, D.P. [Department of Materials Science and Engineering, University of Florida, 106 Rhines Hall, P.O. Box 116400, Gainesville, FL 32611 (United States)]. E-mail: dnort@mse.ufl.edu; Selvamanickam, Venkat [IGC-SuperPower, LLC, 450 Duane Avenue, Schenectady, NY 12304 (United States)

    2006-05-15

    The formation of in-plane texture via ion bombardment of uniaxially textured metal films was investigated. In particular, selective grain Ar ion beam etching of uniaxially textured (0 0 1) Ni was used to achieve in-plane aligned Ni grains. Unlike conventional ion beam assisted deposition, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux. The initial uniaxial texture is established via surface energy minimization with no ion irradiation. Within this sequential texturing method, in-plane grain alignment is driven by selective etching and grain overgrowth. Biaxial texture was achieved for ion beam irradiation at elevated temperature.

  4. Formation of biaxial texture in metal films by selective ion beam etching

    International Nuclear Information System (INIS)

    Park, S.J.; Norton, D.P.; Selvamanickam, Venkat

    2006-01-01

    The formation of in-plane texture via ion bombardment of uniaxially textured metal films was investigated. In particular, selective grain Ar ion beam etching of uniaxially textured (0 0 1) Ni was used to achieve in-plane aligned Ni grains. Unlike conventional ion beam assisted deposition, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux. The initial uniaxial texture is established via surface energy minimization with no ion irradiation. Within this sequential texturing method, in-plane grain alignment is driven by selective etching and grain overgrowth. Biaxial texture was achieved for ion beam irradiation at elevated temperature

  5. Etching Properties of Poly ethyleneterephthalate (PET) Melinex-E Nuclear Track Detectors (NTDs)

    International Nuclear Information System (INIS)

    Ghanim, E.H.; Hussein, A.; El-samman, H.M.; Tretyakova, S.P.

    2009-01-01

    One of the main parameters that control track formation is the bulk etch rate, VB. The dependence of VB on etchant concentrations and temperatures was extensively carried out. It is found that, VB of the PET Melinex-E (C 10 H 8 O 4 ) depends upon the etchant temperature T through an Arrhenius equation. While, the dependence of VB on the etchant concentration; C followed the relation VB = A C n. The activation energy of etching, Eb, for the studied Melinex-E detector was calculated. An average value of Eb = 0.83 ± 0.03 eV was extracted. The variation of, VB, of PET with etching duration was studied and compared with that of CR-39 plastic at certain etching temperature; T e =60 degree C and at different etchant concentrations. The irradiation facilities were performed with the 252 Cf fission fragments and 129 Xe +8 (θi =π/2). Results of these studies were discussed in the frame work of nuclear track formation and etching theories

  6. Poly(4-vinyl pyridine) radiografted PVDF track etched membranes as sensors for monitoring trace mercury in water

    Science.gov (United States)

    Bessbousse, H.; Zran, N.; Fauléau, J.; Godin, B.; Lemée, V.; Wade, T.; Clochard, M.-C.

    2016-01-01

    By a radiation-induced grafting technique, we have functionalized track-etched nanoporous polymer membranes with mercury sensitive poly-4-vinyl pyridine (P4VP). Coating of these membranes with a very thin layer of gold results in an electrochemical sensor that is very selective and highly sensitive for mercury LOD 5 ng/L - well below the norms for water (0.015 μg/L potable water and 0.5 μg/L residual waters-French water norms of 27 October 2011). E-beam irradiation permitted optimization of the radiografting synthesis on PVDF thin films prior to ion-track grafting. Synthesis and characterization by EPR, FESEM and FTIR are described in detail. A comparison between FTIR in ATR and transmission modes enabled us to localize the grafting on the surface of the e-beam irradiated PVDF films allowing us to extrapolate what happens on the etched tracks. Using Square Wave Anodic Stripping Voltammetry (SW-ASV), mercury concentrations of 1 μg/L are detected in 2 h and low ng/L concentrations are detected after 24 h of adsorption. The adsorption is passive so sensors do not require instrumentation and the analysis takes only 3-4 min. Also, the P4VP functionalized sensor appears insensitive to pH variations (pHs 3-9), high salt concentrations (up to 1 g/L) and the presence of other heavy metals in the same solution.

  7. Periodic arrays of deep nanopores made in silicon with reactive ion etching and deep UV lithography

    NARCIS (Netherlands)

    Woldering, L.A.; Tjerkstra, R.W.; Jansen, Henricus V.; Setija, Irwan D.; Vos, Willem L.

    2008-01-01

    We report on the fabrication of periodic arrays of deep nanopores with high aspect ratios in crystalline silicon. The radii and pitches of the pores were defined in a chromium mask by means of deep UV scan and step technology. The pores were etched with a reactive ion etching process with SF6,

  8. Read/write characteristics of focused-ion-beam-etched heads for perpendicular magnetic recording media

    International Nuclear Information System (INIS)

    Tsuboi, S.; Matsutera, H.; Ishi, T.; Ishiwata, N.; Ohashi, K.

    2001-01-01

    The read/write characteristics for perpendicular magnetic recording media of focused-ion-beam (FIB)-etched recording heads were investigated. It was found that the trailing edge of an FIB-etched head produces a higher gradient in the magnetic field perpendicular to the medium than a head which has not been etched. The signal-to-noise ratio of the medium increased with the FIB-etched write gap. A high-Bs and thin pole increased the magnetic field's gradient in the perpendicular direction, resulting in excellent read/write characteristics

  9. Changes of the surface composition of glass during reactive and argon ion etching

    International Nuclear Information System (INIS)

    Jech, C.; Bastl, Z.

    1983-01-01

    Removal of a radioactive implant ( 212 Pb + 212 Bi) from the glass surface was measured during reactive (CF 4 ) and argon ion etching and accompanying changes in the surface composition were determined using ESCA. During reactive etch in CF 4 the formation of fluoride (Na, Ca, Mg) surface layer was observed. High etching rate at low pressure of CF 4 can be explained by the combined action of the reactive etch of the silica component and RF sputtering of the residual non-volatile fluorides. (author)

  10. Influence of the particle discriminator for producing the microporous nuclear track etched membrane

    International Nuclear Information System (INIS)

    Thongphud, Apaporn; Ratanatongchai, Wichian; Supaphol, Pitt; Visal-athaphand, Pinpan

    2005-10-01

    The particle discriminator was used to focus the fission fragments from nuclear fission reaction between thermal neutron from the Thai Research Reactor and U-235 in uranium screen to strike almost normally to the polycarbonate (PC) film. The latent tracks in the thin 15 mm PC film were revealed after etching in 6N NaOH solution at 70 o C for 60 min. It was found that the tracks were porous. The porosity was more discrete and the pore shape was more circular as well. The track diameter was measured 3.73 +- 0.32 mm. It was also found that using particle discriminators with increasing thickness during exposure gives fewer pores in the PC film, after chemical etching under the same condition as above

  11. Dosimetry and microdosimetry on board of satellites with track etch detectors

    CERN Document Server

    Spurny, F; Vlcek, B

    1999-01-01

    The samples of polyallyldiglycolcarbonate track etch detectors were exposed on board of the satellite BION 11 as well as on board of MIR orbital station. They were etched to develop the tracks of primary cosmic ray charged particles as well as their secondaries created through the primary particle nuclear interactions in the detector and neighbouring materials. The secondary particle tracks were evaluated to determine their spectra of linear energy transfer and their contribution to the dose, D, and dose equivalent, H, on on board fields. Dosimetric characteristics obtained are compared with those established in other high energy particle beams and fields. The preliminary results concerning the fluxes of primary cosmic ray charged particles are also presented.

  12. Automated counting and analysis of etched tracks in CR-39 plastic

    International Nuclear Information System (INIS)

    Majborn, B.

    1986-01-01

    An image analysis system has been set up which is capable of automated counting and analysis of etched nuclear particle tracks in plastic. The system is composed of an optical microscope, CCD camera, frame grabber, personal computer, monitor, and printer. The frame grabber acquires and displays images at video rate. It has a spatial resolution of 512 x 512 pixels with 8 bits of digitisation corresponding to 256 grey levels. The software has been developed for general image processing and adapted for the present purpose. Comparisons of automated and visual microscope counting of tracks in chemically etched CR-39 detectors are presented with emphasis on results of interest for practical radon measurements or neutron dosimetry, e.g. calibration factors, background track densities and variations in background. (author)

  13. Observation of nuclear track in organic material by atomic force microscopy in real time during etching

    CERN Document Server

    Palmino, F; Labrune, J C

    1999-01-01

    The developments of Atomic Force Microscopy (AFM) allow to investigated solid surfaces with a nanometer scale. These techniques are useful methods allowing direct observation of surface morphologies. Particularly in the nuclear track fields, they offer a new tool to give many new informations on track formation. In this paper we present the preliminary results of a new use of this technique to characterize continuously the formation of the revealed track in a cellulose nitrate detector (LR115) after an alpha particle irradiation. For that, a specific cell has been used to observe, by nano-observations, the evolution of track shapes simultaneously with chemical treatment. Thus, the track shape evolution has been studied; visualizing the evolution of the tracks in real time, in situ during the chemical etching process.

  14. Model etch profiles for ion energy distribution functions in an inductively coupled plasma reactor

    International Nuclear Information System (INIS)

    Chen, W.; Abraham-Shrauner, B.; Woodworth, J.R.

    1999-01-01

    Rectangular trench profiles are modeled with analytic etch rates determined from measured ion distribution functions. The pattern transfer step for this plasma etch is for trilayer lithography. Argon and chlorine angular ion energy distribution functions measured by a spherical collector ring analyzer are fit to a sum of drifting Maxwellian velocity distribution functions with anisotropic temperatures. The fit of the model ion distribution functions by a simulated annealing optimization procedure converges adequately for only two drifting Maxwellians. The etch rates are proportional to analytic expressions for the ion energy flux. Numerical computation of the etch profiles by integration of the characteristic equations for profile points and connection of the profiles points is efficient. copyright 1999 American Vacuum Society

  15. Image analysis used to count and measure etched tracks from ionizing radiation

    Science.gov (United States)

    Blanford, George E.; Schulz, Cindy K.

    1995-01-01

    We have developed techniques to use digitized scanning electron micrographs and computer image analysis programs to measure track densities in lunar soil grains and plastic dosimeters. Tracks in lunar samples are formed by highly ionizing solar energetic particles and cosmic rays during near surface exposure on the Moon. The track densities are related to the exposure conditions (depth and time). Distributions of the number of grains as a function of their track densities can reveal the modality of soil maturation. We worked on two samples identified for a consortium study of lunar weathering effects, 61221 and 67701. They were prepared by the lunar curator's staff as polished grain mounts that were etched in boiling 1 N NaOH for 6 h to reveal tracks. We determined that backscattered electron images taken at 10 percent contrast and approximately 50 percent brightness produced suitable high contrast images for analysis. We used the NIH Image program to cut out areas that were unsuitable for measurement such as edges, cracks, etc. We ascertained a gray-scale threshold of 25 to separate tracks from background. We used the computer to count everything that was two pixels or greater in size and to measure the area to obtain track densities. We found an excellent correlation with manual measurements for track densities below 1 x 10(exp 8) cm(exp -2). For track densities between 1 x 10(exp 8) cm(exp -2) to 1 x 10(exp 9) cm(exp -2) we found that a regression formula using the percentage area covered by tracks gave good agreement with manual measurements. We determined the track density distributions for 61221 and 67701. Sample 61221 is an immature sample, but not pristine. Sample 67701 is a submature sample that is very close to being fully mature. Because only 10 percent of the grains have track densities less than 10(exp 9) cm(exp -2), it is difficulty to determine whether the sample matured in situ or is a mixture of a mature and a submature soil. Although our analysis

  16. Nanopore detection of double stranded DNA using a track-etched polycarbonate membrane.

    Science.gov (United States)

    Kececi, Kaan; San, Nevim; Kaya, Dila

    2015-11-01

    We investigate the resistive-pulse sensing of 50-bp DNA using track-etched polycarbonate (PC) nanopores and show the translocation dynamics originating from the electrophoretic transport of DNAs. Conically shaped PC nanopore membranes have been prepared with asymmetric chemical etching technique. We show the potential and concentration dependence of DNA translocation through a PC nanopore. We find that the translocation of DNA scales linearly with both potential and concentration. Additionally, the threshold potential is determined to complete the translocation. Finally, by investigating the current-pulse amplitudes of nanopores with different tip sizes, we show that the nanopore size can be successfully used to distinguish the DNA molecules. These results suggest great promise for the sensing of short DNAs and understanding the dynamics of the translocation process using chemically-etched PC nanopores. Copyright © 2015 Elsevier B.V. All rights reserved.

  17. A new technique for radon measurement based on a combination of a track-etch detector and activated charcoal

    Energy Technology Data Exchange (ETDEWEB)

    Sutej, T.; Krizman, M.; Ilic, R. (Institut Jozef Stefan, Ljubljana (Yugoslavia))

    1991-01-01

    A new technique for radon measurement in the natural environment was investigated. It is based on the use of activated charcoal and a track-etch detector. The charcoal acts as a radon collector from the air and the track-etch detector as a recorder of the alpha particles emitted by radon and its decay products. Our preliminary results show that the response of the new dosimeter to radon, using Deodorant activated charcoal (TOK, Yugoslavia) and a CR-39 track-etch detector, is 1.4 tracks cm{sup -2}/Bqm{sup -3}d, which is about eight times higher than that obtained with a standard track-etch dosimeter. (author).

  18. Effects of etching on zircon grains and its implications for the fission track method.

    Science.gov (United States)

    Tello Sáenz, Carlos Alberto; Curvo, Eduardo Augusto Campos; Dias, Airton Natanael Coelho; Soares, Cleber José; Constantino, Carlos José Leopoldo; Alencar, Igor; Guedes, Sandro; Palissari, Rosane; Hadler Neto, Julio Cesar

    2012-05-01

    Studies of zircon grains using optical microscopy, micro-Raman spectroscopy, and scanning electron microscopy (SEM) have been carried out to characterize the surface of natural zircon as a function of etching time. According to the surface characteristics observed using an optical microscope after etching, the zircon grains were classified as: (i) homogeneous; (ii) anomalous, and (iii) hybrid. Micro-Raman results showed that, as etching time increases, the crystal lattice is slightly altered for homogeneous grains, it is completely damaged for anomalous grains, and it is altered in some areas for hybrid grains. The SEM (energy dispersive X-ray spectroscopy, EDS) results indicated that, independent of the grain types, where the crystallinity remains after etching, the chemical composition of zircon is approximately 33% SiO(2):65% ZrO(2) (standard natural zircon), and for areas where the grain does not have a crystalline structure, there are variations of ZrO(2) and, mainly, SiO(2). In addition, it is possible to observe a uniform surface density of fission tracks in grain areas where the determined crystal lattice and chemical composition are those of zircon. Regarding hybrid grains, we discuss whether the areas slightly altered by the chemical etching can be analyzed by the fission track method (FTM) or not. Results of zircon fission track and U-Pb dating show that hybrid and homogeneous grains can be used for dating, and not only homogeneous grains. More than 50 sedimentary samples from the Bauru Basin (southeast Brazil) were analyzed and show that only a small amount of grains are homogeneous (10%), questioning the validity of the rest of the grains for thermo-chronological evolution studies using zircon FTM dating.

  19. Estimation of Ion/Radical Flux from Mask Selectivity and Etching Rate Calibrated by Topography Simulation

    Science.gov (United States)

    Ohmine, Toshimitsu; Deshpande, Vaibhav; Takada, Hideki; Ikeda, Tomoharu; Saito, Hirokazu; Kawai, Fumiaki; Hamada, Kimimori

    2011-08-01

    A simple method for the estimation of ion/radical fluxes in an ion-assisted etching process was developed for SF6/O2/Si etching utilizing the difference in etching mechanism between SiO2 mask and the silicon substrate. It was derived that F coverage of a silicon surface is approximately a linear function of the selectivity of the two materials, from which the incident ion flux and F flux are calculated. The selectivity-to-coverage proportional constant was determined using a topography simulator so that the general trend of etching profiles matched those of the experiment. The obtained fluxes showed reasonable qualitative trends in terms of reactor operational conditions and reactor parameters. The feature profiles simulated by the topography simulator using these flux values were in good agreement with those of scanning electron microscopy (SEM) experimental data over a wide range of operating conditions and machine configurations.

  20. Radon Measurements in Egypt using passive etched track detectors. A Review

    International Nuclear Information System (INIS)

    Gomaa, M.A.; Hussein, A.S.; El-Arabi, A.M.

    2005-01-01

    Radon and its progeny may cause serious radiation harm to human health such as lung cancer and other types. Radon measurements based on alpha particles etched track detectors (LR-115, CR-39) are very attractive for assessment of radon exposure. This is due to their high sensitivity, low cost, easy to handle and retain a permanent record of data. Also these detectors can incorporate the effects of seasonal and diurnal fluctuation of radon activity concentrations due to physical, geological and meteorological factors. The present review is based mainly on the topic of passive etched track detectors for the measurements of radon in Egypt in the recent years. Published papers includes the measurements of radon in dwellings, working places, Cairo Metro stations, ancient Pharaonic places and uranium exploration galleries as well as assessment of radon in drinking water

  1. CR-39 track detector for multi-MeV ion spectroscopy.

    Science.gov (United States)

    Jeong, T W; Singh, P K; Scullion, C; Ahmed, H; Hadjisolomou, P; Jeon, C; Yun, H; Kakolee, K F; Borghesi, M; Ter-Avetisyan, S

    2017-05-19

    We present the characteristics of track formation on the front and rear surfaces of CR-39 produced by laser-driven protons and carbon ions. A methodological approach, based on bulk etch length, is proposed to uniquely characterize the particle tracks in CR-39, enabling comparative description of the track characteristics in different experiments. The response of CR-39 to ions is studied based on the energy dependent growth rate of the track diameter to understand the intrinsic particle stopping process within the material. A large non-uniformity in the track diameter is observed for CR-39 with thickness matching with the stopping range of particles. Simulation and experimental results show the imprint of longitudinal range straggling for energetic protons. Moreover, by exploiting the energy dependence of the track diameter, the energy resolution (δE/E) of CR-39 for few MeV protons and Carbon ion is found to be about 3%.

  2. Spectrometry of the let LET with track etched detectors-correlation with proportional counter measured spectra

    Czech Academy of Sciences Publication Activity Database

    Spurný, František; Bottollier-Depois, J. F.; Vlček, Bohumil

    2001-01-01

    Roč. 32, 1-6 (2001), s. 193-197 ISSN 1350-4487 R&D Projects: GA ČR GA202/01/0710; GA AV ČR KSK1010104 Institutional research plan: CEZ:AV0Z1048901 Keywords : experimental microdosimetry * track etched LET spectrometry * tissue equivalent proportional counter Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.003, year: 2001

  3. Track-etched detectors for the dosimetry of the radiation of cosmic origin

    Czech Academy of Sciences Publication Activity Database

    Spurný, František; Turek, Karel

    2004-01-01

    Roč. 109, č. 4 (2004), s. 375-381 ISSN 0144-8420 R&D Projects: GA AV ČR KSK4055109 Grant - others:EC project(XE) FIGM-CT2000-00068 Institutional research plan: CEZ:AV0Z1048901 Keywords : track-etched detectors * cosmic rays * aircraft Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 0.617, year: 2003

  4. Effect of various etching conditions on the response of Cr-39 plastic track detector applied for radon dosimetry in environment

    International Nuclear Information System (INIS)

    Maged, A.F.; Ashraf, F.A.

    1997-01-01

    A solid state nuclear track detector Cr-39 has been used for measuring the radon concentration in the soil air and indoor concentration. The bulk etch rate, C B of Cr-39 has been measured in various concentrations of NaOH in the range (6-8 mole) at temperature 70 degree C. In addition, the track etch rate, V T , and the ratio V = V T /V B , of alpha particles emitted from radon gas exists in nature have been measured in a similar range of etching conditions. This study shows that 8 M NaOH at 70 degree C represent the optimum etching conditions for Cr-39, with the range of the present study. The equilibrium factor and gamma-dose equivalent were calculated by using the track densities of open and filtered solid state nuclear track detectors

  5. Reactive-ion etching of nylon fabric meshes using oxygen plasma for creating surface nanostructures

    International Nuclear Information System (INIS)

    Salapare, Hernando S.; Darmanin, Thierry; Guittard, Frédéric

    2015-01-01

    Graphical abstract: - Highlights: • Reactive-ion etching (RIE) is employed to nylon 6,6 fabrics to achieve surface texturing and improved wettability. • FTIR spectra of the treated samples exhibited decreased transmittance of amide and carboxylic acid groups due to etching. • Etching is enhanced for higher power plasma treatments and for samples with larger mesh sizes. • Decreased crystallinity was achieved after plasma treatment. • Higher power induced higher negative DC self-bias voltage on the samples that favored anisotropic and aggressive etching. - Abstract: A facile one-step oxygen plasma irradiation in reactive ion etching (RIE) configuration is employed to nylon 6,6 fabrics with different mesh sizes to achieve surface nanostructures and improved wettability for textile and filtration applications. To observe the effects of power and irradiation time on the samples, the experiments were performed using constant irradiation time in varying power and using constant power in varying irradiation times. Results showed improved wettability after the plasma treatment. The FTIR spectra of all the treated samples exhibited decreased transmittance of the amide and carboxylic acid groups due to surface etching. The changes in the surface chemistry are supported by the SEM data wherein etching and surface nanostructures were observed for the plasma-treated samples. The etching of the surfaces is enhanced for higher power plasma treatments. The thermal analysis showed that the plasma treatment resulted in decreased crystallinity. Surface chemistry showed that the effects of the plasma treatment on the samples have no significant difference for all the mesh sizes. However, surface morphology showed that the sizes of the surface cracks are the same for all the mesh sizes but samples with larger mesh sizes exhibited enhanced etching as compared to the samples with smaller mesh sizes. Higher power induced higher negative DC self-bias voltage on the samples that

  6. Ion-radical synergy in HfO2 etching studied with a XeF2/Ar+ beam setup

    International Nuclear Information System (INIS)

    Gevers, P. M.; Beijerinck, H. C. W.; Sanden, M. C. M. van de; Kessels, W. M. M.

    2008-01-01

    To gain more insight into fundamental aspects of the etching behavior of Hf-based high-k materials in plasma etch reactors, HfO 2 films were etched in a multiple-beam setup consisting of a low energy Ar + ion beam and a XeF 2 radical beam. The etch rate and etch products were monitored by real-time ellipsometry and mass spectrometry, respectively. Although etching of HfO 2 in XeF 2 /Ar + chemistry is mainly a physical effect, an unambiguous proof of the ion-radical synergistic effect for the etching of HfO 2 is presented. The etch yield for 400 eV Ar + ions at a substrate temperature of 300 deg. C was 0.3 atoms/ion for Ar + sputtering and increased to 2 atoms/ion when XeF 2 was also supplied. The etch yield proved to follow the common square root of ion energy dependence both for pure sputtering and radical enhanced etching, with a threshold energy at room temperature of 69±17 eV for Ar + ions and 54±14 eV for Ar + ions with XeF 2

  7. Estimation of track registration efficiency in solution medium and study of gamma irradiation effects on the bulk-etch rate and the activation energy for bulk etching of CR-39 (DOP) Solid State Nuclear Track Detector

    International Nuclear Information System (INIS)

    Kalsi, P.C.

    2010-01-01

    The fission track registration efficiency of diethylene glycol bis allyl carbonate (dioctyl phthalate doped) (CR-39 (DOP)) solid state nuclear track detector (SSNTD) in solution medium (K wet ) has been experimentally determined and is found to be (9.7 ± 0.5).10 -4 cm. This is in good agreement with the values of other SSNTDs. The gamma irradiation effects in the dose range of 50.0-220.0 kGy on the bulk etch rate, V b and the activation energy for bulk etching, E of this solid state nuclear track detector (SSNTD) have also been studied. It is observed that the bulk etch rates increase and the activation energies for bulk etching decrease with the increase in gamma dose. These results have been explained on the basis of scission of the detector due to gamma irradiation

  8. Dynamic secondary ion mass spectroscopy of Au nanoparticles on Si wafer using Bi3+ as primary ion coupled with surface etching by Ar cluster ion beam: The effect of etching conditions on surface structure

    Science.gov (United States)

    Park, Eun Ji; Choi, Chang Min; Kim, Il Hee; Kim, Jung-Hwan; Lee, Gaehang; Jin, Jong Sung; Ganteför, Gerd; Kim, Young Dok; Choi, Myoung Choul

    2018-01-01

    Wet-chemically synthesized Au nanoparticles were deposited on Si wafer surfaces, and the secondary ions mass spectra (SIMS) from these samples were collected using Bi3+ with an energy of 30 keV as the primary ions. In the SIMS, Au cluster cations with a well-known, even-odd alteration pattern in the signal intensity were observed. We also performed depth profile SIMS analyses, i.e., etching the surface using an Ar gas cluster ion beam (GCIB), and a subsequent Bi3+ SIMS analysis was repetitively performed. Here, two different etching conditions (Ar1600 clusters of 10 keV energy or Ar1000 of 2.5 keV denoted as "harsh" or "soft" etching conditions, respectively) were used. Etching under harsh conditions induced emission of the Au-Si binary cluster cations in the SIMS spectra of the Bi3+ primary ions. The formation of binary cluster cations can be induced by either fragmentation of Au nanoparticles or alloying of Au and Si, increasing Au-Si coordination on the sample surface during harsh GCIB etching. Alternatively, use of the soft GCIB etching conditions resulted in exclusive emission of pure Au cluster cations with nearly no Au-Si cluster cation formation. Depth profile analyses of the Bi3+ SIMS combined with soft GCIB etching can be useful for studying the chemical environments of atoms at the surface without altering the original interface structure during etching.

  9. Formation of distinctive structures of GaN by inductively-coupled-plasma and reactive ion etching under optimized chemical etching conditions

    Directory of Open Access Journals (Sweden)

    N. Okada

    2017-06-01

    Full Text Available We focused on inductively coupled plasma and reactive ion etching (ICP–RIE for etching GaN and tried to fabricate distinctive GaN structures under optimized chemical etching conditions. To determine the optimum chemical etching conditions, the flow rates of Ar and Cl2, ICP power, and chamber pressure were varied in the etching of c-plane GaN layers with stripe patterns. It was determined that the combination of Ar and Cl2 flow rates of 100 sccm, chamber pressure of 7 Pa, and ICP power of 800 W resulted in the most enhanced reaction, yielding distinctive GaN structures such as pillars with inverted mesa structures for c-plane GaN and a semipolar GaN layer with asymmetric inclined sidewalls. The selectivity and etching rate were also investigated.

  10. High electronegativity multi-dipolar electron cyclotron resonance plasma source for etching by negative ions

    DEFF Research Database (Denmark)

    Stamate, Eugen; Draghici, M.

    2012-01-01

    A large area plasma source based on 12 multi-dipolar ECR plasma cells arranged in a 3 x 4 matrix configuration was built and optimized for silicon etching by negative ions. The density ratio of negative ions to electrons has exceeded 300 in Ar/SF6 gas mixture when a magnetic filter was used...

  11. ATMS software: Fuzzy Hough Transform in a hybrid algorithm for counting the overlapped etched tracks and orientation recognition

    International Nuclear Information System (INIS)

    Khayat, O.; Ghergherehchi, M.; Afarideh, H.; Durrani, S.A.; Pouyan, Ali A.; Kim, Y.S.

    2013-01-01

    A computer program named ATMS written in MATLAB and running with a friendly interface has been developed for recognition and parametric measurements of etched tracks in images captured from the surface of Solid State Nuclear Track Detectors. The program, using image analysis tools, counts the number of etched tracks and depending on the current working mode classifies them according to their radii (small object removal) or their axis (non-perpendicular or non-circular etched tracks), their mean intensity value and their orientation through the minor and major axes. Images of the detectors' surfaces are input to the code, which generates text and figure files as output, including the number of counted etched tracks with the associated track parameters, histograms and a figure showing edge and center of detected etched tracks. ATMS code is running hierarchically as calibration, testing and measurement modes to demonstrate the reliability, repeatability and adaptability. Fuzzy Hough Transform is used for the estimation of the number of etched tracks and their parameters, providing results even in cases that overlapping and orientation occur. ATMS code is finally converted to a standalone file which makes it able to run out of MATLAB environment. - Highlights: ► Presenting a novel code named ATMS for nuclear track measurements. ► Execution in three modes for generality, adaptability and reliability. ► Using Fuzzy Hough Transform for overlapping detection and orientation recognition. ► Using DFT as a filter for noise removal process in track images. ► Processing the noisy track images and demonstration of the presented code

  12. High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma

    Science.gov (United States)

    Yeh, Chia-Pin; Lisker, Marco; Kalkofen, Bodo; Burte, Edmund P.

    2016-08-01

    Reactive ion etching (RIE) technology for iridium with CF4/O2/Ar gas mixtures and aluminum mask at high temperatures up to 350 °C was developed. The influence of various process parameters such as gas mixing ratio and substrate temperature on the etch rate was studied in order to find optimal process conditions. The surface of the samples after etching was found to be clean under SEM inspection. It was also shown that the etch rate of iridium could be enhanced at higher process temperature and, at the same time, very high etching selectivity between aluminum etching mask and iridium could be achieved.

  13. High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma

    Directory of Open Access Journals (Sweden)

    Chia-Pin Yeh

    2016-08-01

    Full Text Available Reactive ion etching (RIE technology for iridium with CF4/O2/Ar gas mixtures and aluminum mask at high temperatures up to 350 °C was developed. The influence of various process parameters such as gas mixing ratio and substrate temperature on the etch rate was studied in order to find optimal process conditions. The surface of the samples after etching was found to be clean under SEM inspection. It was also shown that the etch rate of iridium could be enhanced at higher process temperature and, at the same time, very high etching selectivity between aluminum etching mask and iridium could be achieved.

  14. Surface effect of ultraviolet radiation on electrochemically etched alpha-particle tracks in PADC

    International Nuclear Information System (INIS)

    Ng, F.M.F.; Tse, K.C.C.; Nikezic, D.; Dai, Junfeng; Zhao, Ziqiang; Yu, K.N.

    2008-01-01

    The size of alpha-particle tracks on electrochemically etched ultraviolet-irradiated polyallyldiglycol carbonate (PADC) films were studied. PADC films were first irradiated with 3 MeV alpha particles and then pre-etched chemically using aqueous 6.25 N NaOH solution for 2 h. The films were then exposed to incoherent broad-band ultraviolet (UV) radiation provided by a mercury lamp for different durations up to 2 h. The films were then electrochemically etched in a 6.25 N NaOH solution, with an a.c. voltage of about 1200 V eff and a frequency of 5 kHz, for 2 h at room temperature. The mean sizes of the tracks (or trees) were measured and were found to increase for short UV exposures and decrease for prolonged UV exposures. The results can be explained by the dominance of chain scission at the beginning of UV exposure and the dominance of cross linking for prolonged UV exposure. This explanation is further supported by results from X-ray photo-electron spectroscopy (XPS). Here, the C-O-C bonds decrease for short UV exposures, which is explained by scission of the polymer chains, and increase again for prolonged UV exposure, which indicates cross linking. From nano-indentation measurements, the hardness and the reduced modulus increase monotonically with the UV irradiation. Apparently, these quantities only characterize the amount of cross linking, and do not give information on the initial scission process

  15. The effect of reactive ion etch (RIE) process conditions on ReRAM device performance

    Science.gov (United States)

    Beckmann, K.; Holt, J.; Olin-Ammentorp, W.; Alamgir, Z.; Van Nostrand, J.; Cady, N. C.

    2017-09-01

    The recent surge of research on resistive random access memory (ReRAM) devices has resulted in a wealth of different materials and fabrication approaches. In this work, we describe the performance implications of utilizing a reactive ion etch (RIE) based process to fabricate HfO2 based ReRAM devices, versus a more unconventional shadow mask fabrication approach. The work is the result of an effort to increase device yield and reduce individual device size. Our results show that choice of RIE etch gas (SF6 versus CF4) is critical for defining the post-etch device profile (cross-section), and for tuning the removal of metal layers used as bottom electrodes in the ReRAM device stack. We have shown that etch conditions leading to a tapered profile for the device stack cause poor electrical performance, likely due to metal re-deposition during etching, and damage to the switching layer. These devices exhibit nonlinear I-V during the low resistive state, but this could be improved to linear behavior once a near-vertical etch profile was achieved. Device stacks with vertical etch profiles also showed an increase in forming voltage, reduced switching variability and increased endurance.

  16. Etch-stop behavior of buried layers formed by substoichiometric nitrogen ion implantation into silicon

    International Nuclear Information System (INIS)

    Perez-Rodriguez, A.; Romano-Rodriguez, A.; Morante, J.R.; Acero, M.C. Esteve, J.; Montserrat, J.; El-Hassani, A.

    1996-01-01

    In this work the etch-stop behavior of buried layers formed by substoichiometric nitrogen ion implantation into silicon is studied as a function of the processing parameters, the implantation dose and temperature, and the presence of capping layers during implantation. Etching characteristics have been probed using tetramethylammonium hydroxide or KOH solutions for different times up to 6 h. Results show that, after annealing, the minimum dose required for the formation of an efficient etch-stop layer is about 4 x 10 17 cm -2 , for an implantation energy of 75 keV. This is defined as a layer with an efficient etch selectivity in relation to Si of s ≥ 100. For larger implantation doses efficient etch selectivities larger than 100 are obtained. However, for these doses a considerable density of pits is observed in the etch-stop layer. These are related to the presence of nitrogen poor Si regions in the buried layer after annealing, due to a partial separation of silicon and silicon nitride phases during the annealing process. The influence of this separation of phases as well as nitrogen gettering in the buried layer on the etch-stop behavior is discussed as a function of the processing parameters

  17. Radon measurements by etched track detectors applications in radiation protection, earth sciences and the environment

    CERN Document Server

    Durrani, Saeed A

    1997-01-01

    Exposure to radon gas, which is present in the environment naturally, constitutes over half the radiation dose received by the general public annually. At present, the most widely used method of measuring radon concentration levels throughout the world, both in dwellings and in the field, is by etched track detectors - also known as Solid State Nuclear Detectors (SSNTDs). Although this is not only the most widely used method but is also the simplest and the cheapest, yet there is at present no book available on the market globally, devoted exclusively or largely to the methodology of, and deal

  18. Track etch and thermo luminescent detectors response to high energy charged particles

    Czech Academy of Sciences Publication Activity Database

    Spurný, František; Jadrníčková, Iva

    2008-01-01

    Roč. 43, Supp. 1 (2008), S169-S173 ISSN 1350-4487. [International Conference on Solids /23./. Beijing, 11.09.2006-15.09.2006] R&D Projects: GA ČR GA202/04/0795 Grant - others:Evropské společenství(XE) ILSRA - 2004 - 248 Institutional research plan: CEZ:AV0Z10480505 Keywords : track etch detector * thermoluminescent detectors * LET spectrometry Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.267, year: 2008

  19. Laser radiation effect on radiation-induced defects in heavy ion tracks in dielectrics

    International Nuclear Information System (INIS)

    Egorov, A.N.; Zhiryakov, B.M.; Kushin, V.V.; Lyapidevskij, V.K.; Khokhlov, N.B.

    1988-01-01

    Possibility of laser radiation resonance effect on radiation-induced defects in heavy ion tracks in dielectric materials is investigated. Absorption spectra in infrared, visible and ultraviolet ranges for cellulose nitrate samples irradiated by 6 MeV/nucleon 58 Ni ions and reactor gamma radiation are measured. Absorption spectra for irradiated and reference samples are presented. Two absorption bands λ 1 =0.33 μm (E 1 =3.9 eV) and λ 2 =0.72 μm (E 2 =1.7 eV) are detected. Etching rate decrease in a track under laser radiation effect is noticed. 3 refs.; 1 fig

  20. Silicon surface damage caused by reactive ion etching in fluorocarbon gas mixtures containing hydrogen

    International Nuclear Information System (INIS)

    Norstroem, H.; Blom, H.; Ostling, M.; Nylandsted Larsen, A.; Keinonen, J.; Berg, S.

    1991-01-01

    For selective etching of SiO 2 on silicon, gases or gas mixtures containing hydrogen are often used. Hydrogen from the glow discharge promotes the formation of a thin film polymer layer responsible for the selectivity of the etching process. The reactive ion etch (RIE) process is known to create damage in the silicon substrate. The influence of hydrogen on the damage and deactivation of dopants is investigated in the present work. The distribution of hydrogen in silicon, after different etching and annealing conditions have been studied. The influence of the RIE process on the charge carrier concentration in silicon has been investigated. Various analytical techniques like contact resistivity measurements, four point probe measurements, and Hall measurements have been used to determine the influence of the RIE process on the electrical properties of processed silicon wafers. The hydrogen profile in as-etched and post annealed wafers was determined by the 1 H( 15 N,αγ) 12 C nuclear reaction. The depth of the deactivated surface layer is discussed in terms of the impinging hydrogen ion energy, i.e., the possibility of H + ions to pick up an energy equal to the peak-to-peak voltage of the rf signal

  1. Tracking of Polycarbonate Films using Low-energy Ions Final Report CRADA No. TC-774-94

    Energy Technology Data Exchange (ETDEWEB)

    Musket, R. G. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2018-01-24

    Ion tracking is performed almost exclusively using ions with energies near or above the maximum in electronic stopping. For the present study, we have examined the results of etching ion tracks created by ions bombarding polycarbonate films with energies corresponding to stopping well below the maximum and just above the anticipated threshold for creating etchable latent tracks. Low-energy neon and argon ions with 18-60 keV /amu and fluences of about 108/cm2 were used to examine the limits for producing etchable tracks in polycarbonate films. By concentrating on the early stages of etching (i.e., -20 nm < SEM hole diameter < -100 nm), we can directly relate the energy deposition calculated for the incident ion to the creation of etchable tracks. The experimental results will be discussed with regard to the energy losses of the ions in the polycarbonate films and to the formation of continuous latent tracks through the entire thickness the films. These results have significant implications with respect to the threshold for formation of etchable tracks and to the use of low-energy ions for lithographic applications.

  2. Study on active faults in the Izu Peninsula using α track etch method

    International Nuclear Information System (INIS)

    Katoh, K.; Ikeda, K.; Takahashi, M.; Nagata, S.; Yanagihara, C.

    1981-01-01

    The α track etch method, which is one of the geochemical survey methods for the mapping and detection of active faults and the evaluation of their activities, has been applied to ten sites for the purpose of the earthquake prediction research program. The method conventionally measures relative radon concentration in the soil gas by counting the number of tracks per cm 2 .day on a small piece of plastic film (cellulose nitrate) which is sensitive to α-ray radiation. As the result of the track measurement on many survey lines crossing ten active faults including earthquake faults in the Izu Peninsula, the following was clarified: 1. The peak of track number appears mostly on fault lines but sometimes shifts from it. The line connecting peaks on the several survey lines corresponds to the strike of fault. 2. Relative position between the peak and the fault line on the surface suggests the type of fault, normal or reverse. 3. The track number observed on thin Quaternary strata is generally larger than that on thick Quaternary strata at an active fault concerned. This fact shows that the rising time of radon gas is controlled by the thickness of covering strata. (author)

  3. In-situ monitoring of etch by-products during reactive ion beam etching of GaAs in chlorine/argon

    Energy Technology Data Exchange (ETDEWEB)

    Lee, J.W.; Pearton, S.J.; Abernathy, C.R. [Florida Univ., Gainesville, FL (United States). Dept. of Materials Science and Engineering; Vawter, G.A.; Shul, R.J.; Bridges, M.M.; Willison, C.L. [Sandia National Labs., Albuquerque, NM (United States)

    1997-12-01

    Mass spectrometry of the plasma effluent during Reactive Ion Beam Etching (RIBE) of GaAs using an Inductively Coupled Plasma (ICP) source and a Cl{sub 2}/Ar gas chemistry shows that AsCl{sub 3}, AsCl{sub 2} and AsCl are all detected as etch products for As, while GaCl{sub 2} is the main signal detected for the Ga products. The variation in selective ion currents for the various etch products has been examined as a function of chuck temperature (30--100 C), percentage Cl{sub 2} in the gas flow, beam current (60--180 mA) and beam voltage (200--800 V). The results are consistent with AsCl{sub 3} and GaCl{sub 3} being the main etch product species under their conditions, with fragmentation being responsible for the observed mass spectra.

  4. A simple and rapid method for high-resolution visualization of single-ion tracks

    Directory of Open Access Journals (Sweden)

    Masaaki Omichi

    2014-11-01

    Full Text Available Prompt determination of spatial points of single-ion tracks plays a key role in high-energy particle induced-cancer therapy and gene/plant mutations. In this study, a simple method for the high-resolution visualization of single-ion tracks without etching was developed through the use of polyacrylic acid (PAA-N, N’-methylene bisacrylamide (MBAAm blend films. One of the steps of the proposed method includes exposure of the irradiated films to water vapor for several minutes. Water vapor was found to promote the cross-linking reaction of PAA and MBAAm to form a bulky cross-linked structure; the ion-track scars were detectable at a nanometer scale by atomic force microscopy. This study demonstrated that each scar is easily distinguishable, and the amount of generated radicals of the ion tracks can be estimated by measuring the height of the scars, even in highly dense ion tracks. This method is suitable for the visualization of the penumbra region in a single-ion track with a high spatial resolution of 50 nm, which is sufficiently small to confirm that a single ion hits a cell nucleus with a size ranging between 5 and 20 μm.

  5. Reactive ion etching of polymer materials for an energy harvesting device

    DEFF Research Database (Denmark)

    Wang, Fei; Bertelsen, Christian Vinther; Skands, Gustav

    2012-01-01

    In this paper, we have demonstrated deep reactive ion etching (RIE) of two MEMS compatible polymer materials CYTOP and TOPAS, which may be useful for energy harvesting devices. The CYTOP polymer was patterned and used as the electret for the following corona charging while the TOPAS polymer...

  6. The Langmuir isotherm and the standard model of ion-assisted etching

    International Nuclear Information System (INIS)

    Lieberman, M A

    2009-01-01

    Langmuir is lured to the General Electric Research Laboratory, where he creates a new science-surface chemistry-and christens another-plasma. His atomistic views of gas-surface interactions are extended 65 years later to describe ion-assisted plasma etching, an indispensable process in modern semiconductor device manufacturing.

  7. Conducting swift heavy ion track networks

    Czech Academy of Sciences Publication Activity Database

    Fink, Dietmar; Kiv, A.; Fuks, D.; Vacík, Jiří; Hnatowicz, Vladimír; Chandra, A.; Saad, A.

    2010-01-01

    Roč. 165, č. 3 (2010), s. 227-244 ISSN 1042-0150 R&D Projects: GA AV ČR(CZ) KAN400480701 Institutional research plan: CEZ:AV0Z10480505 Keywords : ion tracks * negative differential resistance * neural networks Subject RIV: JJ - Other Materials Impact factor: 0.660, year: 2010

  8. Single track regime in ion implanted polystyrene

    Energy Technology Data Exchange (ETDEWEB)

    Licciardello, A.; Puglisi, O.; Calcagno, L.; Foti, G.

    1988-05-01

    The molecular weight distribution (MWD) of nearly monodisperse polystyrene thin films is heavily affected by ion bombardment. The main effect is an increase of the MW and is detectable at fluences as low as 10/sup 11/ ions cm/sup -2/ for 400 keV Ar/sup +/ bombardment. A statistical model, here outlined for the first time, allows us the predict the size distribution of these high MW components. From the analysis of the MWD curves one can extract useful information concerning the lateral dimensions of the ion tracks.

  9. Novel single-cell mega-size chambers for electrochemical etching of panorama position-sensitive polycarbonate ion image detectors

    Science.gov (United States)

    Sohrabi, Mehdi

    2017-11-01

    A novel development is made here by inventing panorama single-cell mega-size electrochemical etching (MS-ECE) chamber systems for processing panorama position-sensitive mega-size polycarbonate ion image detectors (MS-PCIDs) of potential for many neutron and ion detection applications in particular hydrogen ions or proton tracks and images detected for the first time in polycarbonates in this study. The MS-PCID is simply a large polycarbonate sheet of a desired size. The single-cell MS-ECE invented consists of two large equally sized transparent Plexiglas sheets as chamber walls holding a MS-PCID and the ECE chamber components tightly together. One wall has a large flat stainless steel electrode (dry cell) attached to it which is directly in contact with the MS-PCID and the other wall has a rod electrode with two holes to facilitate feeding and draining out the etching solution from the wet cell. A silicon rubber washer plays the role of the wet cell to hold the etchant and the electrical insulator to isolate the dry cell from the wet cell. A simple 50 Hz-HV home-made generator provides an adequate field strength through the two electrodes across the MS-ECE chamber. Two panorama single-cell MS-ECE chamber systems (circular and rectangular shapes) constructed were efficiently applied to processing the MS-PCIDs for 4π ion emission image detection of different gases in particular hydrogen ions or protons in a 3.5 kJ plasma focus device (PFD as uniquely observed by the unaided eyes). The panorama MS-PCID/MS-ECE image detection systems invented are novel with high potential for many applications in particular as applied to 4π panorama ion emission angular distribution image detection studies in PFD space, some results of which are presented and discussed.

  10. On ion track geometry in the etching process

    Czech Academy of Sciences Publication Activity Database

    Vacík, Jiří; Červená, Jarmila; Hnatowicz, Vladimír; Pošta, S.; Fink, D.; Naramoto, H.; Kobayashi, Y.; Hirata, K.; Strauss, P.

    1999-01-01

    Roč. 147, - (1999), s. 177-186 ISSN 1042-0150 R&D Projects: GA ČR GA202/96/0077; GA AV ČR KSK1048601 Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 0.444, year: 1999

  11. Deposition, milling, and etching with a focused helium ion beam

    NARCIS (Netherlands)

    Alkemade, P.F.A.; Veldhoven, E. van

    2012-01-01

    The recent successful development of the helium ion microscope has produced both a new type of microscopy and a new tool for nanoscale manufacturing. This chapter reviews the first explorations in this new field in nanofabrication. The studies that utilize the Orion helium ion microscope to grow or

  12. Nuclear tracks in CR-39 produced by carbon, oxygen, aluminium and titanium ions.

    Science.gov (United States)

    Rickards, J; Romo, V; Golzarri, J I; Espinosa, G

    2002-01-01

    This work describes the response of CR-39 (allyl diglycol polycarbonate) to different ions (C, O, Al and Ti) produced by the Instituto de Fisica 3 MV 9SDH-2 Pelletron accelerator and backscattered from a thin Au film on a C support. The ion energies were chosen in series such that the ranges of the different ions in the detector were 2, 3, 4, 5, 6, 7 and 8 microm respectively for each series. Once exposed, the detectors were etched with a solution of 6.25 M KOH at 60 degrees C, and the reading was carried out using a digital image analysis system. An analysis of the measured track diameters of all the types of ions indicates that, for a given range, track kinetics are independent of type of ion, energy and stopping power.

  13. Silicon germanium as a novel mask for silicon deep reactive ion etching

    KAUST Repository

    Serry, Mohamed Y.

    2013-10-01

    This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0Etching selectivity for silicon, silicon oxide, and photoresist was determined at different etching temperatures, ICP and RF powers, and SF6 to O2 ratios. The study demonstrates that the etching selectivity of the SiGe mask for silicon depends strongly on three factors: Ge content; boron concentration; and etching temperature. Compared to conventional SiO2 and SiN masks, the proposed SiGe masking material exhibited several advantages, including high etching selectivity to silicon (>1:800). Furthermore, the SiGe mask was etched in SF6/O2 plasma at temperatures ≥ - 80°C and at rates exceeding 8 μm/min (i.e., more than 37 times faster than SiO2 or SiN masks). Because of the chemical and thermodynamic stability of the SiGe film as well as the electronic properties of the mask, it was possible to deposit the proposed film at CMOS backend compatible temperatures. The paper also confirms that the mask can easily be dry-removed after the process with high etching-rate by controlling the ICP and RF power and the SF6 to O2 ratios, and without affecting the underlying silicon substrate. Using low ICP and RF power, elevated temperatures (i.e., > - 80°C), and an adjusted O2:SF6 ratio (i.e., ~6%), we were able to etch away the SiGe mask without adversely affecting the final profile. Ultimately, we were able to develop deep silicon- trenches with high aspect ratio etching straight profiles. © 1992-2012 IEEE.

  14. Masking considerations in chemically assisted ion beam etching of GaAs/AlGaAs laser structures

    International Nuclear Information System (INIS)

    Behfar-Rad, A.; Wong, S.S.; Davis, R.J.; Wolf, E.D.; Cornell Univ., Ithaca, NY

    1989-01-01

    The use of photoresist, Cr, and SiO 2 as etch masks for GaAs/AlGaAs structures in chemically assisted ion beam etching is reported. The optimized etch with a photoresist mask results in a high degree of anisotropy and smooth sidewalls. However, the etched surface contains undesirable features. The etch with a Cr mask is also highly anisotropic, and the etched surface is free of features. The drawback with Cr masks is that the sidewalls are rough. Vertical and smooth sidewalls as well as a featureless surface are obtained with a SiO 2 mask. The SiO 2 mask has been employed to etch the facets of monolithic GaAs/AlGaAs-based laser structures

  15. Analysis of buried etch-stop layers in silicon by nitrogen-ion implantation

    International Nuclear Information System (INIS)

    Acero, M.C.; Esteve, J.; Montserrat, J.; Perez-Rodriguez, A.; Garrido, B.; Romano-Rodriguez, A.; Morante, J.R.

    1993-01-01

    The analysis of the etch-stop properties of layers obtained by substoichiometric nitrogen-ion implantation and annealing in silicon has been performed as a function of the implantation conditions. The analysis of the etching efficiency has been tested in TMAH-IPA systems. The results obtained show the need to implant at doses higher than 2 x 10 17 cm -2 to obtain etch-stop layers stable under high-temperature annealing. So, for implantation doses of 5 x 10 17 cm -2 , layers stand unetched for times longer than 2 h. The preliminary structural analysis of the samples suggests the presence of an amorphous silicon nitride layer for higher implantation doses. (author)

  16. Versatile micropipette technology based on deep reactive ion etching and anodic bonding for biological applications

    International Nuclear Information System (INIS)

    Lopez-Martinez, M J; Campo, E M; Esteve, J; Plaza, J A; Caballero, D; Errachid, A; Fernandez, E

    2009-01-01

    A novel, versatile and robust technology to manufacture transparent micropipettes, suitable for biological applications, is presented here. Up to three deep reactive ion etchings have been included in the manufacturing process, providing highly controlled geometry of reservoirs, connection cavities and inlet ports. Etching processes have been used for the definition of chip and reservoir and for nozzle release. Additionally, special design considerations have been developed to facilitate micro-to-macro fluidic connections. Implementation of anodic bonding to seal a glass substrate to the fluidic structure etched on Si, allowed observation of the flow inside the reservoir. Flow tests have been conducted by filling channels with different fluids. Flow was observed under an optical microscope, both during capillary filling and also during pumping. Dispensing has been demonstrated by functionalizing the surface of an AFM cantilever. Mechanical tests performed by piercing live mouse cells with FIB-sharpened micropipettes suggest the design is sturdy for biological piercing applications

  17. Enhancing hydrophilicity and water permeability of PET track-etched membranes by advanced oxidation process

    International Nuclear Information System (INIS)

    Korolkov, Ilya V.; Mashentseva, Anastassiya A.; Güven, Olgun; Zdorovets, Maxim V.; Taltenov, Abzal A.

    2015-01-01

    In this study we present results on the application of advanced oxidation systems for effective and non-toxic oxidation of poly(ethylene terephthalate) track-etched membranes (PET TeMs) to improve their wettability and water transport properties. Two oxidizing systems: H 2 O 2 under UV irradiation (H 2 O 2 /UV) and Fenton system under visible light (Fenton/H 2 O 2 /Vis) were compared. The surface of functionalized PET TeMs was characterized by using colorimetric assay, contact angle measurements and X-ray photoelectron spectroscopy (XPS). Results clearly showed that water permeability of PET TeMs treated with H 2 O 2 /UV was improved by 28 ± 5% compared with etched-only membrane, the same parameter was found to increase by 13 ± 4% in the case of Fenton/H 2 O 2 /Vis treatment. The proposed oxidation technique is very simple, environment friendly and not requiring special equipment or expensive chemicals. The surface hydrophilicity of the membranes stored for 360 days in air between paper sheets was analyzed by contact angle test, colorimetric assay to measure concentration of carboxylic groups on the surface with toluidine blue and XPS analysis. The hydrophilic properties of oxidized PET TeMs were found to be stable for a long period of time.

  18. Streamlined cryogenic deep reactive ion etching protocol for hybrid micronozzle arrays

    Science.gov (United States)

    Erten, Ahmet; Makale, Milan; Lu, Xuekun; Fruhberger, Bernd; Kesari, Santosh; Esener, Sadik

    2011-10-01

    This paper describes a novel fabrication methodology for hybrid micronozzle arrays that markedly streamlines and simplifies process flow for cryogenic deep reactive ion etching (DRIE). Cryogenic DRIE utilizes SF6/O2-based high-density plasmas at cryogenic temperatures. A key innovation that we have developed and tested is the application of SU-8 negative resist as both the cryogenic etch mask, replacing hard masks, and as a means of defining micronozzle orifices. First, a thin layer of SU-8 is spun onto one side of the silicon wafer and is patterned to define the micronozzle exit orifices. Then a thick layer of SU-8 is spun onto the backside of wafer, aligned to the micro-patterns of the thin layer of SU-8 and is patterned to act as etch mask and define the micronozzle inlets. These parallel SU-8 coatings on the wafer simplify and shorten the fabrication process by eliminating multiple etching steps and mitigate common problems associated with wafer-wide etching rate non-uniformities and RIE lag. The potential benefits of the rapid cryogenic DRIE micronozzle array fabrication strategy include (1) accelerated throughput of micronozzle array fabrication, (2) enhanced feasibility of fabricating comparatively more complex and/or novel hybrid structures and (3) potential simplification of other through-silicon microfabrication processes.

  19. Nuclear Track-Etched Pore Membrane Production Using OAEP's Research Reactor

    International Nuclear Information System (INIS)

    Chittrakarn, Thawat; Bhongsuwan, Tripob; Wanichapichart, Pikul; Nuanuin, Paiboon; Chongkum, Somporn; Khonduangkaew, Areerat; Bordeepong, Sunaree

    2003-10-01

    Result of this study shows that the OAEP's nuclear research reactor is a good source of both fast and thermal neutrons for pore piercing process on polycarbonate thin film. With our experimental design, the fast neutron provides better results in pore piercing comparing with thermal neutron bombardment. This can be explained that most of the latent tracks that occur by thermal neutron bombardment do not piercing through the thin film. Chemical etching process using NaOH solution with an appropriated time, concentration and temperature was employed to enlarge the latent tracks in the bombarded film by fast neutrons. Fast neutron bombardment with 5, 10 and 20 minutes bombarding time successfully produces the nuclear track membrane. Pore size and pore density of the produced membranes examined by SEM were 0.24-1.01 μm and 4.67 - 245 x 10 6 pore/cm 2 , respectively. Bubble point test showed the maximum pore diameter of the produced membrane ranged between 1.18 - 3.25 μm. Water permeability was studied and compared between the produced and commercial membranes

  20. Magnetoelectrolysis of Co nanowire arrays grown in a track-etched polycarbonate membrane

    International Nuclear Information System (INIS)

    Sanchez-Barriga, J.; Lucas, M.; Rivero, G.; Marin, P.; Hernando, A.

    2007-01-01

    Arrays of Cobalt nanowires with a controlled length of 6μm have been fabricated by electrochemical deposition into the pores of track-etched polycarbonate membranes with a nominal pore diameter of 30nm. The magnetic properties of Co-deposited nanowires and the effects of a magnetic field applied during electrodeposition of the arrays have been studied. An enhancement of the mass deposition rate due to the presence of a 50Oe magnetic field along the nanowire axis has been observed by measuring the experimental development of the current in the electrochemical cell during the fabrication process. X-ray diffraction measurements reveal a different polycrystalline degree for each deposition configuration, indicating that the crystalline structure of the deposited material has been substantially modified. Magnetic measurements show a clear dependence of the anisotropy directions on the orientation of the magnetic field applied during the electrodeposition

  1. Industrial applications of ion track technology

    Science.gov (United States)

    Hanot, H.; Ferain, E.

    2009-03-01

    It4ip sa is a spin out from the Université Catholique de Louvain (Belgium) dedicated to the development and production of unique templates and membranes based on the combination of ion track technology of polymers. It supplies customers with hi-tech products, state-of-the-art research and product development services with template capability to make high value added membranes. Notably based on results coming from several collaborative R&D projects supported by European and Regional funding, recent improvements of ion track technology open new doors for fast growing applications in niche markets. This paper reviews some of these Hi-Tec applications in different fields such as in healthcare (oncology, drug control release combined to implant and artificial organs etc.), energy (fuel cells and batteries etc.), water de-contamination and electronics (OLED etc.).

  2. Operational specifications of the L.I.T.E.S. (Laser Illuminated Track Etch Scattering) dosemeter reader

    International Nuclear Information System (INIS)

    Moore, M.E.; Devine, R.T.; Gepford, H.J.; McKeever, R.J.; Hoffman, J.M.

    2004-01-01

    The Personnel Dosimetry Operations Team at the Los Alamos National Laboratory (LANL) has accepted the LITES dosimeter reader into its suite of radiation dose measurement instruments. The LITES instrument transmits coherent light from a HeNe laser through the pertinent track etch foil and a photodiode measures the amount of light scattered by the etched tracks. A small beam stop blocks the main laser light, while a lens refocuses the scattered light into the photodiode. Three stepper motors in the current LITES system are used to position a carousel that holds 36 track etch dosimeters. Preliminary work with the LITES system demonstrated the device had a linear response in counting foils subjected to exposures up to 50 mSv (5.0 rem). The United States Department of Energy requires that annual general employee dose not exceed 50 mSv (5.0 rem). On a regular basis, LANL uses the Autoscan 60 reader system (Thermo Electron Corp.) for counting track etch dosimeters. However, LANL uses a 15 hour etch process for CR39 dosimeters, and this produces more and larger track etch pits than the 6 hour etch used by many institutions. Therefore, LANL only uses the Autoscan 60 for measuring neutron dose equivalent up to exposure levels of about 3 mSv (300 mrem). The LITES system has a measured lower limit of detection (LLD) of about 0.6 mSv (60 mrem), and it has a correlation coefficient of R 2 = 0.99 over an exposure range up to 500 mSv (50.0 rem). A series of blind studies were done using three methods: the Autoscan 60 system, manual counting by optical microscope, and the LITES instrument. A collection of track etch dosimeters of unknown NDE (neutron dose equivalent) were analyzed using the three methods, and the (PC) performance coefficient was calculated when the NDE became known. The Autoscan 60 and optical microscope methods had a combined PC = 0.171, and the LITES instrument had a PC = 0.194, where a PC less than or equal to 0.300 is considered satisfactory.

  3. Diffusion kinetics of the glucose/glucose oxidase system in swift heavy ion track-based biosensors

    Czech Academy of Sciences Publication Activity Database

    Fink, Dietmar; Vacík, Jiří; Hnatowicz, Vladimír; Hernandez, G. M.; Arrelano, H. G.; Alfonta, L.; Kiv, A.

    2017-01-01

    Roč. 398, MAY (2017), s. 21-26 ISSN 0168-583X R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:61389005 Keywords : etched ion tracks * track radius * polymer * enzyme * diffusion * biosensors Subject RIV: EI - Biotechnology ; Bionics OBOR OECD: Bioremediation, diagnostic biotechnologies (DNA chips and biosensing devices) in environmental management Impact factor: 1.109, year: 2016

  4. Environmental Emissions from Chemical Etching Synthesis of Silicon Nanotube for Lithium Ion Battery Applications

    Directory of Open Access Journals (Sweden)

    Lulu Ma

    2018-02-01

    Full Text Available Silicon nanotubes (SiNTs have been researched as a promising anode material to replace graphite in next-generation lithium ion batteries. Chemical etching synthesis of SiNTs is a simple, controllable and scalable process for SiNT fabrication, but the environmental emissions are of grave concern. In this paper, the process emissions from chemical etching synthesis of SiNTs as anode for lithium ion batteries is studied through experimental techniques, considering the categories of aqueous wastes, gaseous emissions, aqueous nano-particle emissions, and gaseous aerosol emissions. The synthesized SiNTs are measured at 10 μm length and 1–2.2 μm diameter, and can maintain a specific capacity of over 800 mAh/g after 100 cycles in battery testing. In aqueous waste, the chemical compositions of all elements participating in the chemical etching are experimentally determined, with AgNO3 and Co(NO32 identified as the major pollutants. The only gaseous emission generated from the chemical etching synthesis process is H2, with 0.0088 ± 0.0002 mol H2 generated to produce 1.0 mg SiNTs. The aqueous nanoparticle sizes are found to be between 250 nm and 1540 nm. A large number of aerosol nanoparticle emissions of up to 2.96 × 107 particles/cm3 are detected through in situ experimental measurement.

  5. Ionic self-assembly of porphyrin nanostructures on the surface of charge-altered track-etched membranes

    CSIR Research Space (South Africa)

    Mongwaketsi, N

    2010-01-01

    Full Text Available and Sn(IV) tetrakis(4-pyridyl)porphyrin were used to synthesize ionic self-assembled porphyrin nanorods. The track-etched membranes surface charge was changed from negative to positive using polyethyleneimine. The porphyrin nanorods were either filtered...

  6. Radiation dosimetry for microbial experiments in the International Space Station using different etched track and luminescent detectors

    Czech Academy of Sciences Publication Activity Database

    Goossens, O.; Vanhavere, F.; Leys, N.; De Boever, P.; O'Sullivan, D.; Zhou, D.; Spurný, František; Yukihara, E.; Gaza, R.; McKeever, S.

    2006-01-01

    Roč. 120, 1- 4 (2006), s. 433-437 ISSN 0144-8420 R&D Projects: GA MŠk 1P05OC032 Institutional research plan: CEZ:AV0Z10480505 Keywords : bacterial experiments * space flight * etched track detectors * thermoluminescent detectors Subject RIV: DN - Health Impact of the Environment Quality Impact factor: 0.446, year: 2006

  7. Study of latent and etched tracks by a charged particle transmission technique

    CERN Document Server

    Vacik, J; Hnatowicz, V; Fink, D; Kobayashi, Y; Hirata, K; Apel, P Y; Strauss, P

    1999-01-01

    A recently suggested technique for non-destructive investigation of inhomogeneities in thin objects, which is based on the measurement of the energy spectra of charged particles transmitted through the object, is used for the study of thermal annealing of 10-20 mu m thick polyethylene terephtalate, polypropylene and polycarbonate foils irradiated with 1-10 MeV/amu heavy ions. At elevated temperature a foil linear contraction is observed on pristine and irradiated material. Also the foil roughness increases with increasing temperature. On the same foils with etched pores 0.5-1.0 mu m in diameter, the thermal annealing results in gradual closing of the pores up to about 30% of their initial diameter at the temperatures of 150-175 deg. C. At higher temperatures the pore diameter increases and achieves its initial value.

  8. Low-power, low-pressure reactive-ion etching process for silicon etching with vertical and smooth walls for mechanobiology application

    Science.gov (United States)

    Ashraf, Mohammed; Sundararajan, Sree V.; Grenci, Gianluca

    2017-07-01

    We report our findings in developing a low-power etching recipe using a newly acquired reactive-ion etching (RIE) tool (RIE-10NR, Samco, Japan), with the aim of achieving smooth and vertical sidewalls in micropatterned silicon substrate. We used a combination of CF4, SF6, and O2 gases, which at low power (30 W) and low pressure (2 Pa) allowed for vertical silicon etching (aspect ratio ˜2). We used photoresist and silicon oxide as the etching masks. As it is a continuous etching process, scalloping effects were not present, which is contrary to the process done with an inductively coupled plasma-based "Bosch" approach. We also show a successful use of these microstructures as master mold in soft-lithographic techniques for producing devices in elastomeric materials that have applications in mechanobiology. To the best of our knowledge, the recipe we present here has the lowest combination of power and pressure for etching silicon with vertical profile using a standard, parallel plates RIE tool.

  9. Mask-free surface structuring of micro- and nanocrystalline diamond films by reactive ion plasma etching

    Czech Academy of Sciences Publication Activity Database

    Domonkos, Mária; Ižák, Tibor; Babchenko, Oleg; Varga, Marián; Hruška, Karel; Kromka, Alexander

    2014-01-01

    Roč. 6, č. 7 (2014), s. 780-784 ISSN 2164-6627 R&D Projects: GA ČR GAP108/12/0910; GA ČR GAP108/12/0996; GA MPO FR-TI2/736 Institutional support: RVO:68378271 Keywords : micro- and nanocrystalline diamond * capacitively coupled plasma * reactive ion etching * nanostructuring * scanning electron microscopy Subject RIV: BM - Solid Matter Physics ; Magnetism

  10. Chemically Etched Silicon Nanowires as Anodes for Lithium-Ion Batteries

    Energy Technology Data Exchange (ETDEWEB)

    West, Hannah Elise [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2015-08-01

    This study focused on silicon as a high capacity replacement anode for Lithium-ion batteries. The challenge of silicon is that it expands ~270% upon lithium insertion which causes particles of silicon to fracture, causing the capacity to fade rapidly. To account for this expansion chemically etched silicon nanowires from the University of Maine were studied as anodes. They were built into electrochemical half-cells and cycled continuously to measure the capacity and capacity fade.

  11. Deep reactive ion etching of fused silica using a single-coated soft mask layer for bio-analytical applications

    International Nuclear Information System (INIS)

    Ray, Tathagata; Zhu, Haixin; Meldrum, Deirdre R

    2010-01-01

    In this note, we present our results from process development and characterization of reactive ion etching (RIE) of fused silica using a single-coated soft masking layer (KMPR® 1025, Microchem Corporation, Newton, MA). The effects of a number of fluorine-radical-based gaseous chemistries, the gas flow rate, RF power and chamber pressure on the etch rate and etching selectivity of fused silica were studied using factorial experimental designs. RF power and pressure were found to be the most important factors in determining the etch rate. The highest fused silica etch rate obtained was about 933 Å min −1 by using SF 6 -based gas chemistry, and the highest etching selectivity between the fused silica and KMPR® 1025 was up to 1.2 using a combination of CF 4 , CHF 3 and Ar. Up to 30 µm deep microstructures have been successfully fabricated using the developed processes. The average area roughness (R a ) of the etched surface was measured and results showed it is comparable to the roughness obtained using a wet etching technique. Additionally, near-vertical sidewalls (with a taper angle up to 85°) have been obtained for the etched microstructures. The processes developed here can be applied to any application requiring fabrication of deep microstructures in fused silica with near-vertical sidewalls. To our knowledge, this is the first note on deep RIE of fused silica using a single-coated KMPR® 1025 masking layer and a non-ICP-based reactive ion etcher. (technical note)

  12. Ion Beam Etching: Replication of Micro Nano-structured 3D Stencil Masks

    International Nuclear Information System (INIS)

    Weber, Patrick; Guibert, Edouard; Mikhailov, Serguei; Bruegger, Juergen; Villanueva, Guillermo

    2009-01-01

    Ion beam LIGA allows the etching of 3D nano-structures by direct writing with a nano-sized beam. However, this is a relatively time consuming process. We propose here another approach for etching structures on large surfaces and faster, compared to the direct writing process. This approach consists of replicating 3D structured masks, by scanning an unfocused ion beam. A polymer substrate is placed behind the mask, as in UV photolithography. But the main advantage is that the 3D structure of the mask can be replicated into the polymer. For that purpose, the masks (developped at LMIS1, EPFL) are made of a silicon nitride membrane 100 nm thick, on which 3D gold structures up to 200 nm thick, are deposited. The 3D Au structures are made with the nanostencil method, based on successive gold deposition. The IMA institute, from HE-Arc, owns a High Voltage Engineering 1.7 MV Tandetron with both solid and gaseous negative ion sources, able to generate ions from almost every chemical element in a broad range of energies comprised between 400 keV and 6.8 MeV. The beam composition and energy are chosen in such a way, that ions lose a significant fraction of their energy when passing through the thickest regions of the mask. Ions passing through thinner regions of the mask loose a smaller fraction of their energy and etch the polymer with larger thicknesses, allowing a replication of the mask into the polymer. For our trials, we have used a carbon beam with an energy of 500 keV. The beam was focussed to a diameter of 5 mm with solid slits, in order to avoid border effects and thus ensure a homogeneous dose distribution on the beam diameter. The feasibility of this technique has been demonstrated, allowing industrial applications for micro-mould fabrication, micro-fluidics and micro-optics.

  13. Relation between the ion flux, gas phase composition, and wall conditions in chlorine plasma etching of silicon

    International Nuclear Information System (INIS)

    Ullal, Saurabh J.; Kim, Tae Won; Vahedi, Vahid; Aydil, Eray S.

    2003-01-01

    Transients in plasma composition and positive ion flux due to changing chamber wall conditions during Cl 2 plasma etching of Si were studied using multiple plasma and surface diagnostics. In presence of Si and O containing species in the gas phase a glassy silicon oxychloride film coats the chamber walls over a time scale determined by the concentrations of the Si and O containing deposition precursors. This time scale can be a few minutes as in the case of Si etching with Cl 2 plasma, where the concentration of silicon chloride etching products can be high, or hours as in the case of a Cl 2 plasma maintained in absence of Si wafer, where the Si and O can only come from very slow etching of a quartz window. In either case, SiCl x (1≤x≤4) and Cl concentrations in the gas phase and the total ion flux impinging on the wafer surface increase as the chamber walls are coated with this glassy film. The increase in SiCl x and Cl concentrations are primarily due to lower loss probability of these species by recombination on the chamber walls. The ion flux increases primarily due to higher SiCl x concentration in the discharge. During etching of Si, increases in Cl concentration and ion flux through the mechanism described above increases the etching and SiCl x production rates. This strong coupling among the discharge properties, the wall conditions, and etching rate lead to transients in plasma operation

  14. Properties and etching rates of negative ions in inductively coupled plasmas and dc discharges produced in Ar/SF6

    DEFF Research Database (Denmark)

    Draghici, Mihai; Stamate, Eugen

    2010-01-01

    of negative ion to electron exceeded 300 in dc mode while it was below 100 in the ICP mode. The possibility to apply a large positive bias to an electrode without affecting the plasma potential and the transition from a negative sheath to anodic glow are also investigated. The etching rates by positive...... and negative ions are evaluated on silicon substrate for different Ar/SF6 gas ratios. The etching rate by negative ions was with less than 5% smaller than that by positive ions....

  15. Reactive ion etching of GaSb, (Al,Ga)Sb, and InAs for novel device applications

    International Nuclear Information System (INIS)

    LaTulipe, D.C.; Frank, D.J.; Munekata, H.

    1991-01-01

    Although a variety of novel device proposals for GaSb/(Al,Ga)Sb/InAs heterostructures have been made, relatively little is known about processing these materials. The authors of this paper have studied the reactive ion etching characteristics of GaSb, (Al,Ga)Sb, and InAs in both methane/hydrogen and chlorine gas chemistries. At conditions similar to those reported elsewhere for RIE of InP and GaAs in CH 4 /H 2 , the etch rate of (Al,Ga)Sb was found to be near zero, while GaSb and InAs etched at 200 Angstrom/minute. Under conditions where the etch mechanism is primarily physical sputtering, the three compounds etch at similar rates. Etching in Cl 2 was found to yield anistropic profiles, with the etch rate of (Al,Ga)Sb increasing with Al mole fraction, while InAs remains unetched. Damage to the InAs stop layer was investigated by sheet resistance and mobility measurements. These etching techniques were used to fabricate a novel InAs- channel FET composed of these materials. Several scanning electron micrographs of etching results are shown along with preliminary electrical characteristics

  16. New Colloidal Lithographic Nanopatterns Fabricated by Combining Pre-Heating and Reactive Ion Etching

    Directory of Open Access Journals (Sweden)

    Cong Chunxiao

    2009-01-01

    Full Text Available Abstract We report a low-cost and simple method for fabrication of nonspherical colloidal lithographic nanopatterns with a long-range order by preheating and oxygen reactive ion etching of monolayer and double-layer polystyrene spheres. This strategy allows excellent control of size and morphology of the colloidal particles and expands the applications of the colloidal patterns as templates for preparing ordered functional nanostructure arrays. For the first time, various unique nanostructures with long-range order, including network structures with tunable neck length and width, hexagonal-shaped, and rectangular-shaped arrays as well as size tunable nanohole arrays, were fabricated by this route. Promising potentials of such unique periodic nanostructures in various fields, such as photonic crystals, catalysts, templates for deposition, and masks for etching, are naturally expected.

  17. Ultraviolet Laser Damage Dependence on Contamination Concentration in Fused Silica Optics during Reactive Ion Etching Process

    Directory of Open Access Journals (Sweden)

    Laixi Sun

    2018-04-01

    Full Text Available The reactive ion etching (RIE process of fused silica is often accompanied by surface contamination, which seriously degrades the ultraviolet laser damage performance of the optics. In this study, we find that the contamination behavior on the fused silica surface is very sensitive to the RIE process which can be significantly optimized by changing the plasma generating conditions such as discharge mode, etchant gas and electrode material. Additionally, an optimized RIE process is proposed to thoroughly remove polishing-introduced contamination and efficiently prevent the introduction of other contamination during the etching process. The research demonstrates the feasibility of improving the damage performance of fused silica optics by using the RIE technique.

  18. Direct fabrication of nano-gap electrodes by focused ion beam etching

    International Nuclear Information System (INIS)

    Nagase, Takashi; Gamo, Kenji; Kubota, Tohru; Mashiko, Shinro

    2006-01-01

    A simple approach to increase the reliability of nano-gap electrode fabrication techniques is presented. The method is based on maskless sputter etching of Au electrodes using a focused ion beam (FIB) and in-situ monitoring of the etching steps by measuring a current fed to the Au electrodes. The in-situ monitoring is crucial to form nano-gaps much narrower than a FIB spot size. By using this approach, gaps of ∼3-6 nm are fabricated with the high yield of ∼90%, and most of the fabricated nano-gap electrodes showed high resistances of 10 GΩ-1 TΩ. The controllability of the fabrication steps is significantly improved by using triple-layered films consisting of top Ti, Au, and bottom adhesion Ti layers. The applicability of the fabricated nano-gap electrodes to electron transport studies of nano-sized objects is demonstrated by electrical measurement of Au colloidal nano-particles

  19. Reactive Ion Beam Etching of GaAs and Related Compounds in an Inductively Coupled Plasma of Cl(2)-Ar Mixture

    Energy Technology Data Exchange (ETDEWEB)

    Abernathy, C.R.; Hahn, Y.B.; Hays, D.; Lambers, E.S.; Lee, J.W.; Pearton, S.J.; Shul, R.J.; Vawter, G.A.

    1998-11-23

    Reactive ion beam etching (RD3E) of GaAs, GaP, AIGaAs and GaSb was performed in a Cl2-Ar mixture using an Inductively Coupled Plasma (ICP) source. `The etch rates and yields were strongly affected by ion energy and substrate temperature. The RJBE was dominated by ion-assisted etching at <600 eV and by physical sputtering beyond 600 eV. The temperature dependence of the etch rates revealed three different regimes, depending on the substrate temperature: 1) sputtering-etch limited, 2) products-resorption limited, and 3) mass-transfer limited regions. GaSb showed the overall highest etch rates, while GaAs and AIGaAs were etched at the same rates. The etched features showed extremely smooth morphologies with anisotropic sidewalls.

  20. Precise small-angle X-ray scattering evaluation of the pore structures in track-etched membranes: Comparison with other convenient evaluation methods

    Energy Technology Data Exchange (ETDEWEB)

    Miyazaki, Tsukasa, E-mail: t_miyazaki@cross.or.jp [Neutron Science and Technology Center, Comprehensive Research Organization for Science and Society, 162-1, Shirakata, Tokai-mura, Naka-gun, Ibaraki 319-1106 (Japan); Takenaka, Mikihito [Department of Polymer Chemistry, Gradual School of Engineering, Kyoto University, Kyotodaigaku-katsura, Kyoto 615-8510 (Japan)

    2017-03-01

    Poly(ethylene terephthalate) (PET)-based track-etched membranes (TMs) with pore sizes ranging from few nanometers to approximately 1 μm are used in various applications in the biological field, and their pore structures are determined by small-angle X-ray scattering (SAXS). These TMs with the nanometer-sized cylindrical pores aligned parallel to the film thickness direction are produced by chemical etching of the track in the PET films irradiated by heavy ions with the sodium hydroxide aqueous solution. It is well known that SAXS allows us to precisely and statistically estimate the pore size and the pore size distribution in the TMs by using the form factor of a cylinder with the extremely long pore length relative to the pore diameter. The results obtained were compared with those estimated with scanning electron microscopy and gas permeability measurements. The result showed that the gas permeability measurement is convenient to evaluate the pore size of TMs within a wide length scale, and the SEM observation is also suited to estimate the pore size, although SEM observation is usually limited above approximately 30 nm.

  1. Influence factors on etching rate of PET nuclear pore membrane

    International Nuclear Information System (INIS)

    Zuo Zhenzhong; Wu Zhendong; Liang Haiying; Ju Wei; Chen Dongfeng; Fu Yuanyong; Qu Guopu

    2014-01-01

    Background: The nuclear pore membrane is a kind of liquid filtration material manufactured by irradiation and chemical etching. Various conditions in etch process have a great influence on etch rate. Purpose: The influence factors of concentration and temperature of etch solution and the irradiation energy of heavy ions on etch rate was studied. Methods: Four layers of PET (polyethylene terephthalate) films were stacked together and were irradiated with 140-MeV 32 S ions at room temperature under vacuum conditions. Utilizing conductivity measurement technique, the electrical current changes through the u:radiated PET film were monitored during etching, from which the breakthrough time and therefore the track etching rate was calculated. Results: The results show that there is an exponential correlation between etch rate and temperature, and a linear correlation between etch rate and concentration. The track etching rate increases linearly with energy loss rate. Empirical formula for the bulk etching rate as a function of etchant concentration and temperature was also established via fitting of measurements. Conclusion: It is concluded that by using 1.6-MeV·u -1 32 S ions, PET nuclear pore membrane with cylindrical pore shape can be prepared at 85℃ with etchant concentration of l mol·L -1 . (authors)

  2. Synthesis of environmentally responsive organic materials by application of ion track holes in polymer films

    Energy Technology Data Exchange (ETDEWEB)

    Omichi, Hideki; Yoshida, Masaru; Asano, Masaharu [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Katakai, Ryoichi; Spohr, R.; Vetter, J.

    1997-03-01

    Polymer films were irradiated by heavy ion beams and etched by a concentrated alkali solution to produce particle track membranes (PTMs). Then the PTMs were chemically modified by grafting such monomers as amino acid group containing methacryloyl and N-isopropylacrylamide the polymers of which are known as environmentally responsive hydrogels. The size of pores of the modified PTMs under different temperatures in water was followed by electron microscopy. The pore was controlled from an open state to a completely closed state by changing temperature. The conductivity through the membrane was measured by changing the temperature of the cell. (author)

  3. Ion-beam enhanced etching for the 3D structuration of lithium niobate

    International Nuclear Information System (INIS)

    Gischkat, Thomas

    2010-01-01

    The present thesis deals with the usage of the ion-beam enhanced etching (IBEE) for the 3D structuration of lithium niobate (LiNbO 3 ).Hereby the approach of the enhancement of the wet-chemical etching rate due to the irradiation with energetic ions is pursued. This method is very success promising for the realization of micro- and nanostructures with perpendicular structural walls as well as small roughnesses. The aim of this thesis consisted therein to form the foundations for the realization of three-dimensional micro- and nanostructures (for instance: Layer systems and photonic crystals) in LiNbO 3 with high optical quality and to demonstrate on selected examples. Conditions for the success of the IBEE structuration technique is first of all the understanding of the defect formation under ion irradiation as well as the radiation-induced structure changes in the crystal and the change of the chemical resistance connected with this. For this the defect formation was studied in dependence on th ion mass, the ion energy, and the irradiation temperature. Thermally induced influences and effects on the radiation damage, as they can occur in intermediate steps in the complex processing, must be known and were studied by means of subsequent temperature treatment. The results from the defect studies were subsequently applied for the fabrication of micro- and nanostructures in LiNbO 3 . Shown is the realization of lateral structure with nearly perpendicular structure walls as well as the realization of thin membranes and slits. The subsequent combination of lateral structuration with the fabrication of thin membranes and slits allowed the three-dimensional structuration of LiNbO 3 . This is exemplarily shown for a microresonator and for a 2D photonic crystal with below lying air slit. [de

  4. Coupled chemical reactions in dynamic nanometric confinement: VII. Biosensors based on swift heavy ion tracks with membranes

    Czech Academy of Sciences Publication Activity Database

    Fink, Dietmar; Munoz, G. H.; García Arellano, H.; Alfonta, L.; Vacík, Jiří; Kiv, A.; Hnatowicz, Vladimír

    2017-01-01

    Roč. 172, 1-2 (2017), s. 159-173 ISSN 1042-0150 R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:61389005 Keywords : biotechnology * tracks * swift heavy ions * polymers * etching Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders OBOR OECD: Nano-materials (production and properties) Impact factor: 0.443, year: 2016

  5. Formation of metal nanoparticles by short-distance sputter deposition in a reactive ion etching chamber

    International Nuclear Information System (INIS)

    Nie Min; Meng, Dennis Desheng; Sun Kai

    2009-01-01

    A new method is reported to form metal nanoparticles by sputter deposition inside a reactive ion etching chamber with a very short target-substrate distance. The distribution and morphology of nanoparticles are found to be affected by the distance, the ion concentration, and the sputtering time. Densely distributed nanoparticles of various compositions were fabricated on the substrates that were kept at a distance of 130 μm or smaller from the target. When the distance was increased to 510 μm, island structures were formed, indicating the tendency to form continuous thin film with longer distance. The observed trend for nanoparticle formation is opposite to the previously reported mechanism for the formation of nanoparticles by sputtering. A new mechanism based on the seeding effect of the substrate is proposed to interpret the experimental results.

  6. Track structure for low energy ions including charge exchange processes

    International Nuclear Information System (INIS)

    Uehara, S.; Nikjoo, H.

    2002-01-01

    The model and development is described of a new generation of Monte Carlo track structure codes. The code LEAHIST simulates full slowing down of low-energy proton history tracks in the range 1 keV-1 MeV and the code LEAHIST simulates low-energy alpha particle history tracks in the range 1 keV-8 MeV in water. All primary ion interactions are followed down to 1 keV and all electrons to 1 eV. Tracks of secondary electrons ejected by ions were traced using the electron code KURBUC. Microdosimetric parameters derived by analysis of generated tracks are presented. (author)

  7. Strategies towards advanced ion track-based biosensors

    Czech Academy of Sciences Publication Activity Database

    Alfonta, L.; Bukelman, O.; Chandra, A.; Fahrner, W. R.; Fink, D.; Fuks, D.; Golovanov, V.; Hnatowicz, Vladimír; Hoppe, K.; Kiv, A.; Klinkovich, I.; Landau, M.; Morante, J.R.; Tkachenko, N.V.; Vacík, Jiří; Valden, M.

    2009-01-01

    Roč. 164, 7-8 (2009), s. 431-437 ISSN 1042-0150. [2nd International Meeting on Recent Developments in the Study of Radiation Effects in Matters. Fodele, 07.09.2008-11.09.2008] Institutional research plan: CEZ:AV0Z10480505 Keywords : biosensors * etched tracks * enzymes Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 0.550, year: 2009

  8. Dry fabrication of microdevices by the combination of focused ion beam and cryogenic deep reactive ion etching

    International Nuclear Information System (INIS)

    Chekurov, N; Tittonen, I; Grigoras, K; Sainiemi, L; Franssila, S; Peltonen, A

    2010-01-01

    In this paper, we demonstrate silicon microdevice fabrication by a combination of focused ion beam (FIB) and cryogenic deep reactive ion etching (DRIE). Applying FIB treatment only to a thin surface layer enables very high writing speed compared with FIB milling. The use of DRIE then defines the micro- and nanodevices utilizing the FIB-modified silicon as a mask. We demonstrate the ability to create patterns on highly 3D structures, which is extremely challenging by other nanofabrication methods. The alignment of optically made and FIB-defined patterns is also demonstrated. We also show that complete microelectromechanical systems (MEMS) can be fabricated by this method by presenting a double-ended tuning fork resonator as an example. Extremely short process time is achieved as the full fabrication cycle from mask design to electrical measurements can be completed during one working day.

  9. Characterization of graphite etched with potassium hydroxide and its application in fast-rechargeable lithium ion batteries

    Science.gov (United States)

    Shim, Jae-Hyun; Lee, Sanghun

    2016-08-01

    Surface-modified graphite for application as an anode material in lithium ion batteries was obtained by etching with KOH under mild conditions without high-temperature annealing. The surface of the etched graphite is covered with many nano-sized pores that act as entrances for lithium ions during the charging process. As compared with pristine graphite and other references such as pitch-coated or etched graphite samples with annealing, our non-annealed etched graphite exhibits excellent electrochemical properties, particularly at fast charging rates of over 2.5 C. While avoidance of the trade-off between increase of irreversible capacity and good rate capability has previously been a main concern in highly porous carbonaceous materials, we show that the slightly larger surface area created by the etching does not induce a significant increase of irreversible capacity. This study shows that it is important to limit the size of pores to the nanometer scale for excellent battery performance, which is possible by etching under relatively mild conditions.

  10. Piezoelectric evaluation of ion beam etched Pb(Zr,Ti)O3 thin films by piezoresponse force microscopy

    International Nuclear Information System (INIS)

    Legrand, C.; Da Costa, A.; Desfeux, R.; Soyer, C.; Remiens, D.

    2007-01-01

    The evolution of piezoelectric properties of Pb(Zr,Ti)O 3 (PZT) thin films after ion beam etching have been investigated at the nanoscale level by piezoelectric force microscopy. A comparison of the piezoelectric properties on etched and unetched films is realized. Piezoelectric contrasts imaging evidences a modification of the domain architecture at the film surface. Local piezoelectric hysteresis loops measurements on grains indicate that the coercive voltage for switching is much higher for the etched films (2.3 V) compared to the unetched ones (1.0 V) while the average piezoelectric activity is slightly lower. The results are explained in terms of grain-damaging during etching and domain-wall pinning

  11. Fabrication of single-crystal silicon nanotubes with sub-10 nm walls using cryogenic inductively coupled plasma reactive ion etching

    Science.gov (United States)

    Li, Zhiqin; Chen, Yiqin; Zhu, Xupeng; Zheng, Mengjie; Dong, Fengliang; Chen, Peipei; Xu, Lihua; Chu, Weiguo; Duan, Huigao

    2016-09-01

    Single-crystal silicon nanostructures have attracted much attention in recent years due in part to their unique optical properties. In this work, we demonstrate direct fabrication of single-crystal silicon nanotubes with sub-10 nm walls which show low reflectivity. The fabrication was based on a cryogenic inductively coupled plasma reactive ion etching process using high-resolution hydrogen silsesquioxane nanostructures as the hard mask. Two main etching parameters including substrate low-frequency power and SF6/O2 flow rate ratio were investigated to determine the etching mechanism in the process. With optimized etching parameters, high-aspect-ratio silicon nanotubes with smooth and vertical sub-10 nm walls were fabricated. Compared to commonly-used antireflection silicon nanopillars with the same feature size, the densely packed silicon nanotubes possessed a lower reflectivity, implying possible potential applications of silicon nanotubes in photovoltaics.

  12. A Study on Reactive Ion Etching of Barium Strontium Titanate Films Using Mixtures of Argon (Ar), Carbon Tetrafluoride (CF4), and Sulfur Hexafluoride (SF6)

    Science.gov (United States)

    2014-07-01

    A Study on Reactive Ion Etching of Barium Strontium Titanate Films Using Mixtures of Argon (Ar), Carbon Tetrafluoride (CF4), and Sulfur...Etching of Barium Strontium Titanate Films Using Mixtures of Argon (Ar), Carbon Tetrafluoride (CF4), and Sulfur Hexafluoride (SF6) Samuel G...Study on Reactive Ion Etching of Barium Strontium Titanate Films Using Mixtures of Argon (Ar), Carbon Tetrafluoride (CF4), and Sulfur Hexafluoride

  13. Glass nanoimprint using amorphous Ni-P mold etched by focused-ion beam

    International Nuclear Information System (INIS)

    Mekaru, Harutaka; Kitadani, Takeshi; Yamashita, Michiru; Takahashi, Masaharu

    2007-01-01

    The authors succeeded in glass-nanoimprint lithography of micropatterns and nanopatterns using an amorphous Ni-P alloy mold. Glasslike carbon has been used as a mold material to mold not only Pyrex glass but also quartz, because it is still stable at a temperature of 1650 deg. C. However, it is difficult to process glasslike carbon substrates into arbitrary shapes by machining. They thought that amorphous Ni-P alloy could be used as a mold material for industrial glass molding. If Ni is electroless plated when mixed with suitable amount of P on a Si wafer, the Ni-P alloy layer becomes amorphous. An appropriate ratio of Ni and P was determined by the results of x-ray-diffraction measurements. The optimized composition ratio of Ni-P was Ni:P=92:8 wt %. Moreover, line and space patterns and dot arrays with linewidths of as little as 500 nm were etched on the mold using focused-ion beam (FIB) and the processing accuracy for the amorphous Ni-P layer was compared with that for the pure Ni layer. The result was that patterns of 500 nm width were etched to a depth of 2 μm on an amorphous Ni-P alloy mold and the processed surfaces were smooth. In contrast, in the case of the pure Ni layer, the processing line was notched and the sidewalls were very rough. The crystal grain seems to hinder the processing of the nanopattern. After FIB etching, the amorphous Ni-P alloy was thermally treated at 400 deg. C to improve the hardness. Finally, line and space patterns and dot arrays on the amorphous Ni-P alloy mold were nanoimprinted on Pyrex glass using a glass-nanoimprint system (ASHE0201) that National Institute of Advanced Industrial Science and Technology developed

  14. Morphology and annealing kinetics of ion tracks in minerals

    Directory of Open Access Journals (Sweden)

    Ewing R. C.

    2012-10-01

    Full Text Available We have studied the morphology and annealing kinetics of ion tracks in Durango apatite using synchrotron small angle X-ray scattering. The non-destructive, artefact-free technique enables us to determine the track radii with a resolution of fractions of a nanometre. The tracks were generated using different heavy ions with energies between 185 MeV and 2.6 GeV. The track morphology is consistent with the formation of long cylindrical amorphous tracks. The annealing kinetics, measured by SAXS in combination with ex situ and in situ annealing experiments, suggests structural relaxation followed by recrystallisation of the damaged material. The measurement methodology shown here provides a new means for in-depth studies of ion-track formation in minerals under a wide variety of geological conditions.

  15. Optimization of time on CF4/O2 etchant for inductive couple plasma reactive ion etching of TiO2 thin film

    International Nuclear Information System (INIS)

    Adzhri, R.; Fathil, M. F. M.; Ruslinda, A. R.; Gopinath, Subash C. B.; Voon, C. H.; Foo, K. L.; Nuzaihan, M. N. M.; Azman, A. H.; Zaki, M.; Arshad, M. K. Md.; Hashim, U.; Ayub, R. M.

    2016-01-01

    In this work, we investigate the optimum etching of titanium dioxide (TiO 2 ) using inductive couple plasma reactive ion etching (ICP-RIE) on our fabricated devices. By using a combination of CF 4 /O 2 gases as plasma etchant with ratio of 3:1, three samples of TiO 2 thin film were etched with different time duration of 10 s, 15 s and 20 s. The ion bombardment of CF 4 gases with plasma enhancement by O 2 gas able to break the oxide bond of TiO 2 and allow anisotropic etch profile with maximum etch rate of 18.6 nm/s. The sample was characterized by using optical profilometer to determine the depth of etched area and scanning electron microscopy (SEM) for etch profile characterization.

  16. Optimization of time on CF{sub 4}/O{sub 2} etchant for inductive couple plasma reactive ion etching of TiO{sub 2} thin film

    Energy Technology Data Exchange (ETDEWEB)

    Adzhri, R., E-mail: adzhri@gmail.com; Fathil, M. F. M.; Ruslinda, A. R.; Gopinath, Subash C. B.; Voon, C. H.; Foo, K. L.; Nuzaihan, M. N. M.; Azman, A. H.; Zaki, M. [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Perlis (Malaysia); Arshad, M. K. Md., E-mail: mohd.khairuddin@unimap.edu.my; Hashim, U.; Ayub, R. M. [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Perlis (Malaysia); School of Microelectronic Engineering, Universiti Malaysia Perlis (UniMAP), Perlis (Malaysia)

    2016-07-06

    In this work, we investigate the optimum etching of titanium dioxide (TiO{sub 2}) using inductive couple plasma reactive ion etching (ICP-RIE) on our fabricated devices. By using a combination of CF{sub 4}/O{sub 2} gases as plasma etchant with ratio of 3:1, three samples of TiO{sub 2} thin film were etched with different time duration of 10 s, 15 s and 20 s. The ion bombardment of CF{sub 4} gases with plasma enhancement by O{sub 2} gas able to break the oxide bond of TiO{sub 2} and allow anisotropic etch profile with maximum etch rate of 18.6 nm/s. The sample was characterized by using optical profilometer to determine the depth of etched area and scanning electron microscopy (SEM) for etch profile characterization.

  17. Improvement of Current Gain in Triple Ion Implanted 4H-SiC Bipolar Junction Transistor with Etched Extrinsic Base Regions

    Science.gov (United States)

    Tajima, Taku; Nakamura, Tadashi; Satoh, Masataka; Nakamura, Tohru

    We demonstrate triple ion implanted 4H-SiC bipolar junction transistor (BJT). By etching the extrinsic base regions using inductively coupled plasma dry etching, the characteristics of triple ion implanted 4H-SiC BJT were significantly improved. Maximum common emitter current gain was improved from 1.7 to 7.5.

  18. The fabrication of patternable silicon nanotips using deep reactive ion etching

    International Nuclear Information System (INIS)

    Kang, Chang Kun; Jung, Phill Gu; Hwang, Sung Jin; Ko, Jong Soo; Lee, Sang Min; Jung, Im Deok

    2008-01-01

    This paper presents a novel fabrication method of patternable silicon nanotips. The proposed fabrication method involves four steps: lithography, the first deep reactive ion etching (DRIE), removal of the photoresist and the second DRIE. The fabricated silicon nanotips are well aligned along the edges of microstructures. The plane shape of the microstructure was determined by the patterned shape of the photoresist. It means that the silicon nanotips can be patterned by the patterned shape of the photoresist. The width of the nanotips, 1 µm below the top, was measured to be about 200 nm. The fabricated nanotips were applied to modify the surface of silicon from hydrophilic to superhydrophobic. The contact angle was drastically increased from 79.7° (bare silicon surface) to 158.3° (surface modified with nanotips). Therefore, the surface was modified from hydrophilic to superhydrophobic

  19. Si nanopatterning by reactive ion etching through an on-chip self-assembled porous anodic alumina mask

    Science.gov (United States)

    Gianneta, Violetta; Olziersky, Antonis; Nassiopoulou, Androula G.

    2013-02-01

    We report on Si nanopatterning through an on-chip self-assembled porous anodic alumina (PAA) masking layer using reactive ion etching based on fluorine chemistry. Three different gases/gas mixtures were investigated: pure SF6, SF6/O2, and SF6/CHF3. For the first time, a systematic investigation of the etch rate and process anisotropy was performed. It was found that in all cases, the etch rate through the PAA mask was 2 to 3 times lower than that on non-masked areas. With SF6, the etching process is, as expected, isotropic. By the addition of O2, the etch rate does not significantly change, while anisotropy is slightly improved. The lowest etch rate and the best anisotropy were obtained with the SF6/CHF3 gas mixture. The pattern of the hexagonally arranged pores of the alumina film is, in this case, perfectly transferred to the Si surface. This is possible both on large areas and on restricted pre-defined areas on the Si wafer.

  20. Transfer of Direct and Moiré Patterns by Reactive Ion Etching Through Ex Situ Fabricated Nanoporous Polymer Masks

    DEFF Research Database (Denmark)

    Shvets, Violetta; Hentschel, Thomas; Schulte, Lars

    2015-01-01

    hexagonal packing of 10 nm pores with a principal period of 20 nm. We demonstrate the transfer of the hexagonal pattern onto silicon by means of reactive ion etching through the masks. In addition, patterns elliptic and slit-like holes on silicon are obtained by utilizing masks cut at 45 degrees relative...

  1. Spin-resolved magnetic studies of focused ion beam etched nano-sized magnetic structures

    International Nuclear Information System (INIS)

    Li Jian; Rau, Carl

    2005-01-01

    Scanning ion microscopy with polarization analysis (SIMPA) is used to study the spin-resolved surface magnetic structure of nano-sized magnetic systems. SIMPA is utilized for in situ topographic and spin-resolved magnetic domain imaging as well as for focused ion beam (FIB) etching of desired structures in magnetic or non-magnetic systems. Ultra-thin Co films are deposited on surfaces of Si(1 0 0) substrates, and ultra-thin, tri-layered, bct Fe(1 0 0)/Mn/bct Fe(1 0 0) wedged magnetic structures are deposited on fcc Pd(1 0 0) substrates. SIMPA experiments clearly show that ion-induced electrons emitted from magnetic surfaces exhibit non-zero electron spin polarization (ESP), whereas electrons emitted from non-magnetic surfaces such as Si and Pd exhibit zero ESP, which can be used to calibrate sputtering rates in situ. We report on new, spin-resolved magnetic microstructures, such as magnetic 'C' states and magnetic vortices, found at surfaces of FIB patterned magnetic elements. It is found that FIB milling has a negligible effect on surface magnetic domain and domain wall structures. It is demonstrated that SIMPA can evolve into an important and efficient tool to study magnetic domain, domain wall and other structures as well as to perform magnetic depth profiling of magnetic nano-systems to be used in ultra-high density magnetic recording and in magnetic sensors

  2. Effect of gamma irradiation on the etching and optical properties of a newly developed nuclear track detector called (PNADAC) homopolymer

    Energy Technology Data Exchange (ETDEWEB)

    Kalsi, P.C. [Radiochemistry Division, BARC, Trombay, Mumbai 400085 (India)], E-mail: pckalsi@barc.gov.in; Nadkarni, V.S. [Department of Chemistry, Goa University, Goa 403206 (India); Manchanda, V.K. [Radiochemistry Division, BARC, Trombay, Mumbai 400085 (India)

    2008-09-15

    In the present work, we have determined the bulk-etch rates of a newly developed track detector called poly-[N-allyloxycarbonyl diethanolamine-bis allylcarbonate] (PNADAC) homopolymer at different temperatures to deduce its activation energy. The energy of activation is found to be (1.02{+-}0.04) eV. This compares very well with the values of activation energy reported in the literature for the most commonly used nuclear track detectors. The effects of gamma irradiation on this new detector in the dose range of 4.7-14.5 Mrad have also been studied using UV-visible spectroscopic technique. The optical band gaps of the unirradiated and the gamma-irradiated detectors determined from the UV-visible spectra were found to decrease with the increase in gamma dose. These results have been explained on the basis of scission of the detector due to gamma irradiation.

  3. The spark counting of etched fission-fragment tracks in polycarbonate for a personal neutron dosimetry system

    International Nuclear Information System (INIS)

    Harrison, K.G.; Hancock, I.B.; Holt, P.D.; Wylie, J.W.

    1977-10-01

    A new type of personal neutron dosimeter, in which neutron-induced fissions in a thin 237 Np foil are detected by a polycarbonate track-detector, is under development at Harwell for use in a nuclear-fuel reprocessing plant. As part of the development programme, an experimental dosimeter, etching facility and spark counter have been used to study the spark-counting method for counting fission-fragment tracks in polycarbonate. Emphasis has been placed on developing operating procedures for the counter consistent with good overall reproducibility. Existing methods for the optimizing and testing of spark counters is briefly reviewed and a practical operational testing procedure is devised. The optimized system is found to be relatively foolproof in operation and gives good results in unskilled use as well as under carefully-controlled laboratory conditions. (author)

  4. Transport of ions and biomolecules through asymmetric single nanopores fabricated by heavy ion irradiation and chemical etching

    International Nuclear Information System (INIS)

    Neumann, R.; Siwy, Z.; Schiedt, B.; Toimil Molares, M.E.

    2005-01-01

    In the framework of the CRP 'Radiation Synthesis of Stimuli-responsive Membranes, Hydrogels and Adsorbents for Separation Purposes', GSI has worked on the production of polymeric single conical nanopores and the study of the ionic transport through these pores. To produce single-pore membranes, polyethylene teraphthalate (PET) and polyimide (PI) foils were first irradiated with GeV single heavy ions. By subsequent one-side etching, asymmetric nanopores were created. The diameter of the conical pores in PET varied between 4-20 nm at the small opening and several hundred nm at the large opening. In the case of PI, due to the higher bulk etching rate, the large aperture reached a few μm. The current-voltage (I-V) characteristics were measured at symmetric electrolyte conditions of KCl at various concentrations and pH values. It was found that conical nanopores with charged surfaces are cation selective, and show preferential cation flow (i.e. rectification) from the narrow entrance to the wide opening of the cone. Concentration and pH influence the rectification properties for both polymers was studied. The experimental results are in agreement with existing models. The transient transport properties of single PET and PI pores were also investigated. The ion current through PET nanopores fluctuates considerably, the fluctuation depending on the voltage, whereas PI nanopores display a stable current signal for KCl concentrations between 0.1 and 3 M, and pH values between 2 and 8. This different behavior has been attributed to the chemical structure of the two polymers influencing surface characteristics of the resulting nanopores. Finally, the application of polyimide conical nanopores as single-molecule-DNA sensors is being investigated. First results demonstrate their ability to detect individual plasmid DNA molecules. The nanopore sensor is also able to discriminate between DNA fragments of different lengths. (author)

  5. Industrial ion source technology. [for ion beam etching, surface texturing, and deposition

    Science.gov (United States)

    Kaufman, H. R.

    1977-01-01

    Plasma probe surveys were conducted in a 30-cm source to verify that the uniformity in the ion beam is the result of a corresponding uniformity in the discharge-chamber plasma. A 15 cm permanent magnet multipole ion source was designed, fabricated, and demonstrated. Procedures were investigated for texturing a variety of seed and surface materials for controlling secondary electron emission, increasing electron absorption of light, and improved attachment of biological tissue for medical implants using argon and tetrafluoromethane as the working gases. The cross section for argon-argon elastic collisions in the ion-beam energy range was calculated from interaction potentials and permits calculation of beam interaction effects that can determine system pumping requirements. The data also indicate that different optimizations of ion-beam machines will be advantageous for long and short runs, with 1 mA-hr/cm being the rough dividing line for run length. The capacity to simultaneously optimize components in an ion-beam machine for a single application, a capacity that is not evident in competitive approaches such as diode sputtering is emphasized.

  6. Advances in analytical techniques for neutron capture therapy: thin layer chromatography matrix and track etch thin layer chromatography methods for boron-10 analysis

    International Nuclear Information System (INIS)

    Schremmer, J.M.; Noonan, D.J.

    1987-01-01

    A new track etch autoradiographic technique for quantitating boron-10 containing compounds used for neutron capture therapy is described. Instead of applying solutions of Cs2B12H11SH and its oxidation products directly to solid-state nuclear track detectors, diethylaminoethyl cellulose thin layer chromatography (TLC) plates are utilized as sample matrices. The plates are juxtaposed with Lexan polycarbonate detectors and irradiated in a beam of thermal neutrons. The detectors are then chemically etched, and the resultant tracks counted with an optoelectronic image analyzer. Sensitivity to boron-10 in solution reaches the 1 pg/microliter level, or 1 ppb. In heparinized blood samples, 100 pg boron-10/microliter are detected. This TLC matrix method has the advantage that sample plates can be reanalyzed under different reactor conditions to optimize detector response to the boron-10 carrier material. Track etch/TLC allows quantitation of the purity of boron neutron capture therapy compounds by utilizing the above method with TLC plates developed in solvent systems that resolve Cs2B12H11SH and its oxidative analogs. Detectors irradiated in juxtaposition to the thin layer chromatograms are chemically etched, and the tracks are counted in the sample lane from the origin of the plate to the solvent front. A graphic depiction of the number of tracks per field yields a quantitative analysis of compound purity

  7. Fabrication of fluorinated polyimide microgrids using magnetically controlled reactive ion etching (MC-RIE) and their applications to an ion drag integrated micropump

    Science.gov (United States)

    Furuya, Akinori; Shimokawa, Fusao; Matsuura, Tohru; Sawada, Renshi

    1996-09-01

    Magnetically controlled reactive ion etching (MC-RIE) of a fluorinated polyimide substrate achieved etching selectivity of up to 2600, resulting in a smoothly etched surface and structures hundreds of micrometers high having good perpendicularity. This technique is useful for three-dimensional microfabrication. As an example of a typical application, we fabricated an ion drag integrated micropump with microgrid sets consisting of 0960-1317/6/3/003/img1 high pole-shaped counter-electrode elements arranged like a pair of interleaved combs by using a fluorinated polyimide as the structural material, metallization, and lift-off using a ZnO sacrificial layer. This micropump moved ethanol with a flow rate of about 0960-1317/6/3/003/img2 when 200 V was applied to the counter electrodes.

  8. Heavy ions track structure in a PETP

    Science.gov (United States)

    Ciesla, K.; Starosta, W.

    1995-11-01

    Differential scanning calorimetry (DSC) studies of poly(ethylenetherephtalate) (PETP) film irradiated with high energy heavy ions at high ions fluencies are reported. Thin Mylar and Hostaphan PETP films (23 μm or 19 μm thick) were irradiated with Ar, Dy and Pb ions of the following energies and ions fluencies: Ar - 5.5 MeV/amu, 6 × 10 11ions/cm 2; Dy - 13 MeV/amu, 5 × 10 10ions/cm 2 and ca. 10 11 ions/cm 2; Pb - 11.4 MeV/amu, 10 10 ions/cm 2. DSC measurements were performed in nitrogen during heating-cooling-heating cycles at heating-cooling-heating rates of: 10-10-10°/min and 2-20-2°/min. Significant differences between pristine and the irradiated material were observed during melting and recrystallization processes occurring on primary heating, cooling and secondary heating. They have been attributed to film amorphization during heavy ion irradiation as a result of degradation and crosslinking, confirmed by gel permeation chromatography (GPC). The decrease in crystallinity and disappearance of long range order in the highly irradiated samples have been confirmed by wide and small angle X-ray scattering (WAXS, SAXS) results and density measurements. This can also be concluded on the basis of IR spectroscopy patterns. The DSC method can be applied in studies of structural changes occurring in thin polymer films after heavy ion irradiation.

  9. Optimizing shape uniformity and increasing structure heights of deep reactive ion etched silicon x-ray lenses

    DEFF Research Database (Denmark)

    Stöhr, Frederik; Wright, Jonathan; Simons, Hugh

    2015-01-01

    Line-focusing compound silicon x-ray lenses with structure heights exceeding 300 μm were fabricated using deep reactive ion etching. To ensure profile uniformity over the full height, a new strategy was developed in which the perimeter of the structures was defined by trenches of constant width....... The remaining sacrificial material inside the lens cavities was removed by etching through the silicon wafer. Since the wafers become fragile after through-etching, they were then adhesively bonded to a carrier wafer. Individual chips were separated using laser micro machining and the 3D shape of fabricated...... analysis, where a slight bowing of the lens sidewalls and an insufficiently uniform apex region are identified as resolution-limiting factors. Despite these, the proposed fabrication route proved a viable approach for producing x-ray lenses with large structure heights and provides the means to improve...

  10. Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN

    Science.gov (United States)

    Kuritzky, L. Y.; Becerra, D. L.; Saud Abbas, A.; Nedy, J.; Nakamura, S.; DenBaars, S. P.; Cohen, D. A.

    2016-07-01

    We demonstrate a vertical (devices. The etch profiles were achieved with photoresist masks and optimized CAIBE chamber conditions including the platen tilt angle and Cl2 flow rate. Co-loaded studies showed similar etch rates of ˜60 nm min-1 for (20\\bar{2}\\bar{1}),(20\\bar{2}1), and m-plane orientations. The etched surfaces of LD facets on these orientations are chemically dissimilar (Ga-rich versus N-rich), but were visually indistinguishable, thus confirming the negligible orientation dependence of the etch. Continuous-wave blue LDs were fabricated on the semipolar (20\\bar{2}\\bar{1}) plane to compare CAIBE and reactive ion etch (RIE) facet processes. The CAIBE process resulted in LDs with lower threshold current densities due to reduced parasitic mirror loss compared with the RIE process. The LER, degree of verticality, and model of the 1D vertical laser mode were used to calculate a maximum uncoated facet reflection of 17% (94% of the nominal) for the CAIBE facet. The results demonstrate the suitability of CAIBE for forming high quality facets for high performance nonpolar and semipolar III-N LDs.

  11. Study of gamma irradiation effects on the etching and optical properties of CR-39 solid state nuclear track detector and its application to uranium assay in soil samples

    International Nuclear Information System (INIS)

    Amol Mhatre; Kalsi, P.C.

    2011-01-01

    The gamma irradiation effects in the dose range of 2.5-43.0 Mrad on the etching and optical characteristics of CR-39 solid state nuclear track detector (SSNTD) have been studied by using etching and UV-Visible spectroscopic techniques. From the measured bulk etch rates at different temperatures, the activation energies for bulk etching at different doses have also been determined. It is seen that the bulk etch rates increase and the activation energies for bulk etching decrease with the increase in gamma dose. The optical band gaps of the unirradiated and the gamma -irradiated detectors determined from the UV-Visible spectra were found to decrease with the increase in gamma dose. These results have been explained on the basis of scission of the detector due to gamma irradiation. The present studies can be used for the estimation of gamma dose in the range of 2.5-43.0 Mrad and can also be used for estimating track registration efficiency in the presence of gamma dose. The CR-39 detector has also been applied for the assay of uranium in some soil samples of Jammu city. (author)

  12. An energy and direction independent fast neutron dosemeter based on electrochemically etched CR-39 nuclear track detectors

    International Nuclear Information System (INIS)

    James, K.; Matiullah; Durrani, S.A.

    1987-01-01

    A computer-based model is presented, which simulates the dose equivalent response of electrochemically etched CR-39 to fast neutrons of various energies and angles of incidence. Most previous calculations of the response of CR-39 have neglected the production of recoiling oxygen and carbon nuclei as well as α particles in the CR-39. We calculate that these 'heavy recoils' and α particles are the major source of electrochemically etchable tracks in bare CR-39 at neutron energies above approx. 2 MeV under typical etching conditions. Our calculations have been extended to predict the response of CR-39 used in conjunction with various combinations of polymeric front radiators and we have determined the radiator stack configuration with produces the most energy independent response. Again, the heavy recoils and α particles cannot be neglected and, for energies above approx. 2 MeV, these produce typically about 20% of the total response of our optimum stack. This type of fast neutron dosemeter is, however, strongly direction dependent. We have integrated the response over all appropriate angles to predict the dose equivalent response for two representative neutron fields, and we suggest a method for minimising the angular dependence. (author)

  13. Charge identification in CR-39 nuclear track detector using relativistic lead ion fragmentation

    CERN Document Server

    Manzoor, S; Rana, M A; Shahzad, M I; Sher, G; Sajid, M; Khan, H A; Giacomelli, G; Giorgini, M; Mandrioli, G; Patrizii, L; Popa, V; Serra, P; Togo, V

    2000-01-01

    Three stacks of plastic CR-39 Nuclear Track Detectors (NTD) were exposed to 158 A GeV /sup 207/Pb ions at the CERN-SPS beam facility. The main purpose of this experiment was the calibration of the CR-39 for the search of atmospheric magnetic monopoles. Different targets (Al, Cu and Pb) were used to produce a large spectrum of charge ions for the purpose of calibration as well as the study of ultrarelativistic lead ion fragmentation. The exposure of each stack was performed at normal incidence with a fluence of about 1500 ion/cm /sup 2/. The total number of lead ions in each spill was about 7.8*10 /sup 4/ and there were eight spills incident on each stack. For the stack with the Cu target, the lengths of etched cones on one face of the CR-39 were measured. From this measurement procedure, a new calibration curve has been generated for the extended charge region 63or=2, and a large dynamical range in counting rates of up to 10/sup 9/ s/sup -1/ due to single particle or current readout, respectively. (2 refs).

  14. Field calibration of PADC track etch detectors for local neutron dosimetry in man using different radiation qualities

    Energy Technology Data Exchange (ETDEWEB)

    Haelg, Roger A., E-mail: rhaelg@phys.ethz.ch [Institute for Radiotherapy, Radiotherapie Hirslanden AG, Hirslanden Medical Center, Rain 34, CH-5000 Aarau (Switzerland); Besserer, Juergen [Institute for Radiotherapy, Radiotherapie Hirslanden AG, Hirslanden Medical Center, Rain 34, CH-5000 Aarau (Switzerland); Boschung, Markus; Mayer, Sabine [Division for Radiation Safety and Security, Paul Scherrer Institut, CH-5232 Villigen (Switzerland); Clasie, Benjamin [Department of Radiation Oncology, Massachusetts General Hospital, 30 Fruit Street, Boston, MA 02114 (United States); Kry, Stephen F. [Department of Radiation Physics, The University of Texas M.D. Anderson Cancer Center, 1515 Holcombe Blvd., Houston, TX 77030 (United States); Schneider, Uwe [Institute for Radiotherapy, Radiotherapie Hirslanden AG, Hirslanden Medical Center, Rain 34, CH-5000 Aarau (Switzerland); Vetsuisse Faculty, University of Zurich, Winterthurerstrasse 204, CH-8057 Zurich (Switzerland)

    2012-12-01

    In order to quantify the dose from neutrons to a patient for contemporary radiation treatment techniques, measurements inside phantoms, representing the patient, are necessary. Published reports on neutron dose measurements cover measurements performed free in air or on the surface of phantoms and the doses are expressed in terms of personal dose equivalent or ambient dose equivalent. This study focuses on measurements of local neutron doses inside a radiotherapy phantom and presents a field calibration procedure for PADC track etch detectors. An initial absolute calibration factor in terms of H{sub p}(10) for personal dosimetry is converted into neutron dose equivalent and additional calibration factors are derived to account for the spectral changes in the neutron fluence for different radiation therapy beam qualities and depths in the phantom. The neutron spectra used for the calculation of the calibration factors are determined in different depths by Monte Carlo simulations for the investigated radiation qualities. These spectra are used together with the energy dependent response function of the PADC detectors to account for the spectral changes in the neutron fluence. The resulting total calibration factors are 0.76 for a photon beam (in- and out-of-field), 1.00 (in-field) and 0.84 (out-of-field) for an active proton beam and 1.05 (in-field) and 0.91 (out-of-field) for a passive proton beam, respectively. The uncertainty for neutron dose measurements using this field calibration method is less than 40%. The extended calibration procedure presented in this work showed that it is possible to use PADC track etch detectors for measurements of local neutron dose equivalent inside anthropomorphic phantoms by accounting for spectral changes in the neutron fluence.

  15. A passive radon dosimeter based on the combination of a track etch detector and activated charcoal

    CERN Document Server

    Deynse, A V; Poffijn, A

    1999-01-01

    The aim of this work is to test a combination of a Makrofol track detector with a new type of charcoal (Carboxen-564) to design a personal radon dosimeter. The intention is to use this dosimeter as a personal radon dosimeter to measure the monthly radon exposure in workplaces, especially when the occupancy is not exactly known. The proposed combination was exposed to low and high concentrations of radon in a large range of relative humidity (RH). For the optimal layer thickness, a charcoal bed of 2.2 mm, a specific track density of 5.1 tracks cm sup - sup 2 /kBq h m sup - sup 3 was obtained. For a monthly working exposure (170 h) at an average radon concentration of 100 Bq/m sup 3 , this means 87 tracks/cm sup 2 or 10 times the background of the Makrofol detector, with a statistical uncertainty of 15%.

  16. Ion tracking in photocathode rf guns

    Directory of Open Access Journals (Sweden)

    John W. Lewellen

    2002-02-01

    Full Text Available Projected next-generation linac-based light sources, such as PERL or the TESLA free-electron laser, generally assume, as essential components of their injector complexes, long-pulse photocathode rf electron guns. These guns, due to their design rf pulse durations of many milliseconds to continuous wave, may be more susceptible to ion bombardment damage of their cathodes than conventional rf guns, which typically use rf pulses of microsecond duration. This paper explores this possibility in terms of ion propagation within the gun, and presents a basis for future study of the subject.

  17. Time multiplexed deep reactive ion etching of germanium and silicon-A comparison of mechanisms and application to x-ray optics.

    Science.gov (United States)

    Genova, Vincent J; Agyeman-Budu, David N; Woll, Arthur R

    2018-01-01

    Although the mechanisms of deep reactive ion etching (DRIE) of silicon have been reported extensively, very little by comparison has been discussed concerning DRIE of germanium. By directly comparing silicon and germanium etching in a time multiplexed DRIE process, the authors extract significant differences in etch mechanisms from a design of experiment and discuss how these differences are relevant to the design and fabrication of silicon and germanium collimating channel array x-ray optics. The differences are illuminated by characteristics such as reactive ion etching (RIE)-lag, aspect ratio dependent etching, and sidewall passivation. Specifically, the authors demonstrate the more severe nature of RIE-lag in germanium, especially at aspect ratios exceeding 13:1. In addition, the differences in the profile evolution between silicon and germanium are shown to be a result of differences in sidewall passivation. There is also a correlation between the different sidewall passivation and the inherent lack of scalloping in the case of germanium DRIE.

  18. Variation in geometry and electrical conductance properties of asymmetric track-etched single nanopores: How uniform are they?

    Energy Technology Data Exchange (ETDEWEB)

    Olejniczak, K., E-mail: kziel@jinr.ru [Flerov Laboratory of Nuclear Reactions, Joint Institute for Nuclear Research, Joliot-Curie Str. 6, 141980 Dubna (Russian Federation); Faculty of Chemistry, Nicolaus Copernicus University, Gagarina Str. 7, 87-100 Torun (Poland); Orelovich, O.L. [Flerov Laboratory of Nuclear Reactions, Joint Institute for Nuclear Research, Joliot-Curie Str. 6, 141980 Dubna (Russian Federation); Apel, P.Y. [Flerov Laboratory of Nuclear Reactions, Joint Institute for Nuclear Research, Joliot-Curie Str. 6, 141980 Dubna (Russian Federation); Dubna International University, Universitetskaya Str. 19, 141980 Dubna (Russian Federation)

    2015-12-15

    In this paper, the transport property uniformity of single asymmetric pores in polyethylene terephthalate membranes was investigated. Two types of films, Hostaphan RN and Hostaphan RNK, were used. The foils were irradiated with either single or multiple (∼10{sup 8} cm{sup −2}) Au and Xe ions. Samples were UV-treated and etched in surfactant-doped 5 mol/L NaOH at 60 °C for 6 min and 30 s in order to obtain nanopores with bullet-shaped tips. The geometry of the nanopores was determined from SEM images of multi-pore membrane cross sections. The reproducibility of the electrical characteristics of individual nanopores with bullet-like tips in two different types of polyethylene terephthalate foils was studied. The relationship between electro-conductive properties of the asymmetric nanopores and the polymer morphology is discussed.

  19. Structural analysis of simulated swift heavy ion tracks in quartz

    International Nuclear Information System (INIS)

    Leino, Aleksi A.; Daraszewicz, Szymon L.; Pakarinen, Olli H.; Djurabekova, Flyura; Nordlund, Kai; Afra, Boshra; Kluth, Patrick

    2014-01-01

    Swift heavy ions (SHI), of specific kinetic energies in the excess of 1 MeV/u, can create cylindrical regions of structural transformation in SiO 2 targets, also known as SHI tracks. Recent measurements of the track cross-sections in α-quartz show significant and consistent discrepancies across different experimental techniques used. In particular, the track radii obtained from channelling experiments based on the Rutherford Backscattering Spectrometry (RBS-c) method increase monotonically with the electronic stopping power, whereas the track radii obtained from the Small Angle X-ray scattering (SAXS) saturate past a certain stopping power threshold. We perform a systematic study of the structure of the α-quartz tracks obtained from the molecular dynamics (MD) simulations incorporating a time-dependent energy deposition based on the inelastic thermal spike model, which allows us to discuss the possible origins of these experimental discrepancies

  20. Investigations on diamond nanostructuring of different morphologies by the reactive-ion etching process and their potential applications.

    Science.gov (United States)

    Kunuku, Srinivasu; Sankaran, Kamatchi Jothiramalingam; Tsai, Cheng-Yen; Chang, Wen-Hao; Tai, Nyan-Hwa; Leou, Keh-Chyang; Lin, I-Nan

    2013-08-14

    We report the systematic studies on the fabrication of aligned, uniform, and highly dense diamond nanostructures from diamond films of various granular structures. Self-assembled Au nanodots are used as a mask in the self-biased reactive-ion etching (RIE) process, using an O2/CF4 process plasma. The morphology of diamond nanostructures is a close function of the initial phase composition of diamond. Cone-shaped and tip-shaped diamond nanostructures result for microcrystalline diamond (MCD) and nanocrystalline diamond (NCD) films, whereas pillarlike and grasslike diamond nanostructures are obtained for Ar-plasma-based and N2-plasma-based ultrananocrystalline diamond (UNCD) films, respectively. While the nitrogen-incorporated UNCD (N-UNCD) nanograss shows the most-superior electron-field-emission properties, the NCD nanotips exhibit the best photoluminescence properties, viz, different applications need different morphology of diamond nanostructures to optimize the respective characteristics. The optimum diamond nanostructure can be achieved by proper choice of granular structure of the initial diamond film. The etching mechanism is explained by in situ observation of optical emission spectrum of RIE plasma. The preferential etching of sp(2)-bonded carbon contained in the diamond films is the prime factor, which forms the unique diamond nanostructures from each type of diamond films. However, the excited oxygen atoms (O*) are the main etching species of diamond film.

  1. Reactive ion etching of tellurite and chalcogenide waveguides using hydrogen, methane, and argon

    International Nuclear Information System (INIS)

    Vu, K. T.; Madden, S. J.

    2011-01-01

    The authors report in detail on the reactive plasma etching properties of tellurium and demonstrate a high quality etching process using hydrogen, methane, and argon. Very low loss planar ridge waveguides are demonstrated. Optical losses in tellurium dioxide waveguides below 0.1 dB/cm in most of the near infrared region of the electromagnetic spectrum and at 1550 nm have been achieved--the lowest ever reported by more than an order of magnitude and clearly suitable for planar integrated devices. The etch process is also shown to be suitable for chalcogenide glasses which may be of importance in applications such as phase change memory devices and nonlinear integrated optics.

  2. Ion range measurements using fluorescent nuclear track detectors

    DEFF Research Database (Denmark)

    Klimpki, G.; Osinga, J.-M.; Herrmann, R.

    2013-01-01

    Fluorescent nuclear track detectors (FNTDs) show excellent detection properties for heavy charged particles and have, therefore, been investigated in this study in terms of their potential for in-vivo range measurements. We irradiated FNTDs with protons as well as with C, Mg, S, Fe and Xe ion beams...

  3. Ion track structure in poly(di-n-hexylsilane)

    International Nuclear Information System (INIS)

    Seki, S.; Maeda, K.; Kunimi, Y.

    2000-01-01

    Solid films of poly(di-n-hexylsilane) were irradiated with a variety of high energy ion beams, electron beams, and 60 Co γ-rays of which LET ranges from 0.2 to 1620 eV/nm. The beams caused non-homogeneous reactions of crosslinking and main chain scission in the films. The relative efficiency of the crosslinking was drastically changed in comparison with that of main chain scission. The anomalous change in the molecular weight distribution was analyzed with increasing irradiation fluence, and the ion beam induced reaction radius: track radius was determined for the radiation sources by the function of molecular weight dispersion. The molecular weight of the polymer was also traced to give the efficiency of crosslinking reactions: G(x) based on Charlesby-Pinner relationship. The value of G(x) increases from 0.042 to 0.91 with increasing values of LET. We adopt a reaction model in a single ion track to the crosslinking reactions, and the expanding chemical track along an ion trajectory is responsible for the increasing crosslinking G-values. The theoretical aspects of the energy distribution in penumbra area give a good interpretation to the chemical track radii obtained in this study. (author)

  4. Ion track structure in poly(di-n-hexylsilane)

    Energy Technology Data Exchange (ETDEWEB)

    Seki, S.; Maeda, K.; Kunimi, Y. [Osaka Univ., Ibaraki (Japan). Inst. of Scientific and Industrial Research] [and others

    2000-03-01

    Solid films of poly(di-n-hexylsilane) were irradiated with a variety of high energy ion beams, electron beams, and {sup 60}Co {gamma}-rays of which LET ranges from 0.2 to 1620 eV/nm. The beams caused non-homogeneous reactions of crosslinking and main chain scission in the films. The relative efficiency of the crosslinking was drastically changed in comparison with that of main chain scission. The anomalous change in the molecular weight distribution was analyzed with increasing irradiation fluence, and the ion beam induced reaction radius: track radius was determined for the radiation sources by the function of molecular weight dispersion. The molecular weight of the polymer was also traced to give the efficiency of crosslinking reactions: G(x) based on Charlesby-Pinner relationship. The value of G(x) increases from 0.042 to 0.91 with increasing values of LET. We adopt a reaction model in a single ion track to the crosslinking reactions, and the expanding chemical track along an ion trajectory is responsible for the increasing crosslinking G-values. The theoretical aspects of the energy distribution in penumbra area give a good interpretation to the chemical track radii obtained in this study. (author)

  5. Multi-Step Deep Reactive Ion Etching Fabrication Process for Silicon-Based Terahertz Components

    Science.gov (United States)

    Jung-Kubiak, Cecile (Inventor); Reck, Theodore (Inventor); Chattopadhyay, Goutam (Inventor); Perez, Jose Vicente Siles (Inventor); Lin, Robert H. (Inventor); Mehdi, Imran (Inventor); Lee, Choonsup (Inventor); Cooper, Ken B. (Inventor); Peralta, Alejandro (Inventor)

    2016-01-01

    A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.

  6. Structuring of DLC:Ag nanocomposite thin films employing plasma chemical etching and ion sputtering

    Science.gov (United States)

    Tamulevičius, Tomas; Tamulevičienė, Asta; Virganavičius, Dainius; Vasiliauskas, Andrius; Kopustinskas, Vitoldas; Meškinis, Šarūnas; Tamulevičius, Sigitas

    2014-12-01

    We analyze structuring effects of diamond like carbon based silver nanocomposite (DLC:Ag) thin films by CF4/O2 plasma chemical etching and Ar+ sputtering. DLC:Ag films were deposited employing unbalanced reactive magnetron sputtering of silver target with Ar+ in C2H2 gas atmosphere. Films with different silver content (0.6-12.9 at.%) were analyzed. The films (as deposited and exposed to plasma chemical etching) were characterized employing scanning electron microscopy and energy dispersive X-ray analysis (SEM/EDS), optical microscopy, ultraviolet-visible light (UV-VIS) spectroscopy and Fourier transform infrared (FTIR) spectroscopy. After deposition, the films were plasma chemically etched in CF4/O2 mixture plasma for 2-6 min. It is shown that optical properties of thin films and silver nano particle size distribution can be tailored during deposition changing the magnetron current and C2H2/Ar ratio or during following plasma chemical etching. The plasma etching enabled to reveal the silver filler particle size distribution and to control silver content on the surface that was found to be dependent on Ostwald ripening process of silver nano-clusters. Employing contact lithography and 4 μm period mask in photoresist or aluminum the films were patterned employing CF4/O2 mixture plasma chemical etching, direct Ar+ sputtering or combined etching processes. It is shown that different processing recipes result in different final grating structures. Selective carbon etching in CF4/O2 gas mixture with photoresist mask revealed micrometer range lines of silver nanoparticles, while Ar+ sputtering and combined processing employing aluminum mask resulted in nanocomposite material (DLC:Ag) micropatterns.

  7. Discovery of Naturally Etched Fission Tracks and Alpha-Recoil Tracks in Submarine Glasses: Reevaluation of a Putative Biosignature for Earth and Mars

    Directory of Open Access Journals (Sweden)

    Jason E. French

    2016-01-01

    Full Text Available Over the last two decades, conspicuously “biogenic-looking” corrosion microtextures have been found to occur globally within volcanic glass of the in situ oceanic crust, ophiolites, and greenstone belts dating back to ~3.5 Ga. These so-called “tubular” and “granular” microtextures are widely interpreted to represent bona fide microbial trace fossils; however, possible nonbiological origins for these complex alteration microtextures have yet to be explored. Here, we reevaluate the origin of these enigmatic microtextures from a strictly nonbiological standpoint, using a case study on submarine glasses from the western North Atlantic Ocean (DSDP 418A. By combining petrographic and SEM observations of corrosion microtextures at the glass-palagonite interface, considerations of the tectonic setting, measurement of U and Th concentrations of fresh basaltic glass by ICP-MS, and theoretical modelling of the present-day distribution of radiation damage in basaltic glass caused by radioactive decay of U and Th, we reinterpret these enigmatic microtextures as the end product of the preferential corrosion/dissolution of radiation damage (alpha-recoil tracks and fission tracks in the glass by seawater, possibly combined with pressure solution etch-tunnelling. Our findings have important implications for geomicrobiology, astrobiological exploration of Mars, and understanding of the long-term breakdown of nuclear waste glass.

  8. Wafer Surface Charge Reversal as a Method of Simplifying Nanosphere Lithography for Reactive Ion Etch Texturing of Solar Cells

    Directory of Open Access Journals (Sweden)

    Daniel Inns

    2007-01-01

    Full Text Available A simplified nanosphere lithography process has been developed which allows fast and low-waste maskings of Si surfaces for subsequent reactive ion etching (RIE texturing. Initially, a positive surface charge is applied to a wafer surface by dipping in a solution of aluminum nitrate. Dipping the positive-coated wafer into a solution of negatively charged silica beads (nanospheres results in the spheres becoming electrostatically attracted to the wafer surface. These nanospheres form an etch mask for RIE. After RIE texturing, the reflection of the surface is reduced as effectively as any other nanosphere lithography method, while this batch process used for masking is much faster, making it more industrially relevant.

  9. Study of ion tracks by micro-probe ion energy loss spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Vacík, Jiří; Havránek, Vladimír; Hnatowicz, Vladimír; Horák, Pavel; Fink, Dietmar; Apel, P. Yu.

    2014-01-01

    Roč. 332, AUG (2014), s. 308-311 ISSN 0168-583X. [21st International Conference on Ion Beam Analysis (IBA). Seattle, 23.06.2013-28.06.2013] R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk(XE) LM2011019 Institutional support: RVO:61389005 Keywords : ion energy loss spectrometry * single ion track * microprobe * tomography Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.124, year: 2014

  10. Recent Developments in the Code RITRACKS (Relativistic Ion Tracks)

    Science.gov (United States)

    Plante, Ianik; Ponomarev, Artem L.; Blattnig, Steve R.

    2018-01-01

    The code RITRACKS (Relativistic Ion Tracks) was developed to simulate detailed stochastic radiation track structures of ions of different types and energies. Many new capabilities were added to the code during the recent years. Several options were added to specify the times at which the tracks appear in the irradiated volume, allowing the simulation of dose-rate effects. The code has been used to simulate energy deposition in several targets: spherical, ellipsoidal and cylindrical. More recently, density changes as well as a spherical shell were implemented for spherical targets, in order to simulate energy deposition in walled tissue equivalent proportional counters. RITRACKS is used as a part of the new program BDSTracks (Biological Damage by Stochastic Tracks) to simulate several types of chromosome aberrations in various irradiation conditions. The simulation of damage to various DNA structures (linear and chromatin fiber) by direct and indirect effects has been improved and is ongoing. Many improvements were also made to the graphic user interface (GUI), including the addition of several labels allowing changes of units. A new GUI has been added to display the electron ejection vectors. The parallel calculation capabilities, notably the pre- and post-simulation processing on Windows and Linux machines have been reviewed to make them more portable between different systems. The calculation part is currently maintained in an Atlassian Stash® repository for code tracking and possibly future collaboration.

  11. Diode-like single-ion track membrane prepared by electro-stopping

    International Nuclear Information System (INIS)

    Apel, P.Yu.; Korchev, Yu.E.; Siwy, Z.; Spohr, R.; Yoshida, M.

    2001-01-01

    The preparation of an asymmetric membrane in poly(ethylene terephthalate) (PET) is described, using a combination of chemical and electro-stopping. For this purpose, a single-ion-irradiated PET film is inserted into an electrolytic cell and etched from one side in 9 M sodium hydroxide while bathing the other side in a mixture of 2 M KCl and 2 M HCOOH (1:1 by volume), electrically retracting the OH - ions from the tip of the etch pit during pore break-through. When a preset current has been reached, the etch process is interrupted by replacing the etching solution with acidic 1 M potassium chloride solution. After etching, the current-voltage (I-V) characteristic is determined under symmetric bathing conditions, immersing both sides of the membrane in KCl solutions of identical concentration (0.01-1 M) and pH (3-8). The I-V characteristic is strongly non-linear, comparable to that of an electrical diode. If the polarity during etching is reversed, pushing the OH - ions into the tip of the etch pit, the resulting pores are larger and the degree of asymmetry smaller. The importance of electro-stopping is compared with chemical stopping

  12. Radiation dosimetry for microbial experiments in the International Space Station using different etched track and luminescent detectors

    International Nuclear Information System (INIS)

    Goossens, O.; Vanhavere, F.; Leys, N.; De Boever, P.; O'Sullivan, D.; Zhou, D.; Spurny, F.; Yukihara, E. G.; Gaza, R.; McKeever, S. W. S.

    2006-01-01

    The laboratory of Microbiology at SCK.CEN, in collaboration with different universities, participates in several ESA programmes with bacterial experiments that are carried out in the International Space Station (ISS). The main objective of these programmes is to study the effects of space flight conditions such as microgravity and cosmic radiation on the general behaviour of model bacteria. To measure the radiation doses received by the bacteria, different detectors accompanied the microbiological experiments. The results obtained during two space flight missions are discussed. This dosimetry experiment was a collaboration between different institutes so that the doses could be estimated by different techniques. For measurement of the high linear energy transfer (LET) doses (>10 keV μm -1 ), two types of etched track detectors were used. The low LET part of the spectrum was measured by three types of thermoluminescent detectors ( 7 LiF:Mg,Ti; 7 LiF:Mg,Cu,P; Al 2 O 3 :C) and by the optically stimulated luminescence technique using Al 2 O 3 :C detectors. (authors)

  13. In situ ion etching in a scanning electron microscope and its application to the study of dental restorations

    International Nuclear Information System (INIS)

    Dhariwal, R.S.; Ball, P.C.; Marsland, E.A.; Fitch, R.K.

    1978-01-01

    The cylindrical version of the Saddle Field ion source has been water-cooled to eliminate radiation from the source which contributes to the rise in temperature of a specimen undergoing ion bombardment. This has also eliminated the problem of the build-up of black contamination on the anodes which causes a deterioration in the performance within the first hour of operation. In the water-cooled source, smooth conducting films are obtained instead of the black uneven deposit, and this gives extremely stable operation for long periods of time. One of these sources has been incorporated into the specimen stage of a scanning electron microscope to provide a facility for the in situ ion etching of all types of materials. A particular problem of the recurrent failure of dental fillings has been studied in some detail and it is believed that this may be due to a thin bridge of amalgam near the interface with the enamel which is removed during etching, exposing a relatively large gap immediately below. A similar process may occur in the oral environment, where this thin layer can be fractured due to mastication, enabling bacteria to penetrate and thus initiate decay. Work is also being carried out in vivo using replication techniques to try to substantiate these findings. (author)

  14. Enhanced Etching, Surface Damage Recovery, and Submicron Patterning of Hybrid Perovskites using a Chemically Gas-Assisted Focused-Ion Beam for Subwavelength Grating Photonic Applications

    KAUST Repository

    Alias, Mohd Sharizal

    2015-12-22

    The high optical gain and absorption of organic–inorganic hybrid perovskites have attracted attention for photonic device applications. However, owing to the sensitivity of organic moieties to solvents and temperature, device processing is challenging, particularly for patterning. Here, we report the direct patterning of perovskites using chemically gas-assisted focused-ion beam (GAFIB) etching with XeF2 and I2 precursors. We demonstrate etching enhancement in addition to controllability and marginal surface damage compared to focused-ion beam (FIB) etching without precursors. Utilizing the GAFIB etching, we fabricated a uniform and periodic submicron perovskite subwavelength grating (SWG) absorber with broadband absorption and nanoscale precision. Our results demonstrate the use of FIB as a submicron patterning tool and a means of providing surface treatment (after FIB patterning to minimize optical loss) for perovskite photonic nanostructures. The SWG absorber can be patterned on perovskite solar cells to enhance the device efficiency through increasing light trapping and absorption.

  15. Uranium content measurement in drinking water samples using track etch technique

    International Nuclear Information System (INIS)

    Kumar, Mukesh; Kumar, Ajay; Singh, Surinder; Mahajan, R.K.; Walia, T.P.S.

    2003-01-01

    The concentration of uranium has been assessed in drinking water samples collected from different locations in Bathinda district, Punjab, India. The water samples are taken from hand pumps and tube wells. Uranium is determined using fission track technique. Uranium concentration in the water samples varies from 1.65±0.06 to 74.98±0.38 μg/l. These values are compared with safe limit values recommended for drinking water. Most of the water samples are found to have uranium concentration above the safe limit. Analysis of some heavy metals (Zn, Cd, Pb and Cu) in water is also done in order to see if some correlation exists between the concentration of uranium and these heavy metals. A weak positive correlation has been observed between the concentration of uranium and heavy metals of Pb, Cd and Cu

  16. Direct etching of SiO2 and Al2O3 by 900-keV gold ions

    OpenAIRE

    Glass, Gary A.; Dias, Johnny Ferraz; Dymnikov, Alexander D.; Houston, Louis M.; Rout, Bibhudutta

    2009-01-01

    We report the direct etching of Al2O3 and SiO2 using 900-keV Au+ ions. 2000-mesh Cu grids were employed as masks using two different configurations: 1 the Cu mesh was placed on top of each insulator separately and independent irradiations were performed, and 2 the Al2O3 and SiO2 substrates were positioned in an edge-to-edge configuration with a single Cu grid providing a common mask to both insulators. Scanning electron microscopy SEM analysis revealed quite different patterns resulting from ...

  17. Mine test of thermoluminescence energy discriminatory track etch personal dosemeters in uranium mines having nearly equal concentrations of radon and thoron daughters

    International Nuclear Information System (INIS)

    Pai, H.L.; Jokura, K.; Phillips, C.R.

    1981-01-01

    Energy discriminatory CEA track etch dosemeters and LiF thermoluminescence dosemeters were used to record the total dose in a uranium mine atmosphere containing both radon daughters and thoron daughters in approximately equal concentrations. In addition, the track etch dosemeters were used to record the individual concentrations of RaA, RaC' and ThC', thereby allowing calculation of the separate radon daughter and thoron daughter working levels. The pump performance of the dosemeters was characterized in terms of durability, stability and sensitivity to attitude, vibration and impact. Grab sampling results taken in the work area were not representative of all of the individual miner exposures because of the strong effect of job function on exposure. (author)

  18. Ion track filters in imaging X-ray astronomy

    Science.gov (United States)

    Mitrofanov, A. V.; Apel, P. Yu.

    2006-04-01

    The application of ion track filters as blocking cut-off filters for solar telescopes in imaging X-ray astronomy is presented. Ion track membranes (ITMs) of high-porosity constitute a randomly inhomogeneous medium with sub-micrometer or micrometer open pores which not only transmits X-ray or extreme ultra violet (EUV) radiation and blocks long-wavelength UV radiation, but also transfers a focused imaging pattern with high-quality for further registration by means of CCD or imaging detectors of other types. X-ray and EUV filters based on ITMs with cylindrical parallel pores were successfully used as detector filters in the solar X-ray telescopes designed and manufactured at the Lebedev Physical Institute of the Russian Academy of Sciences (LPI, Moscow).

  19. Direct evidence of reactive ion etching induced damages in Ge{sub 2}Sb{sub 2}Te{sub 5} based on different halogen plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Li, Juntao [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Microsystem Technology Laboratory, Microsystem & Terahertz Research Center, Sichuan Province 610200 (China); Xia, Yangyang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100080 (China); Liu, Bo, E-mail: liubo@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Feng, Gaoming [United Lab, Semiconductor Manufacturing International Corporation, Shanghai 201203 (China); Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Gao, Dan; Xu, Zhen; Wang, Weiwei [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100080 (China); Chan, Yipeng [United Lab, Semiconductor Manufacturing International Corporation, Shanghai 201203 (China); Feng, Songlin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

    2016-08-15

    Highlights: • The results of SEM and AFM directly showed that the surface of Cl2 etched samples were roughest with a Ge deficient damaged layer. • The XPS of Te 3d revealed the electrons were transferred from chalcogenide to halogen and the highest halogenation was observed on CF4 etching GST films. • The sidewall of HBr etching GST is nearly vertical compared with others. • HBr is promising gas for GST etching in the fabrication of high-density memory devices. - Abstract: Chalcogenide glasses based on Ge-Te-Sb are processed using reactive ion etching (RIE) in the fabrication of phase change memory (PCM). These materials are known to be halogenated easily and apt to be damaged when exposed to halogen gas based plasmas which can cause severe halogenation-induced degradation. In this paper, we investigate the RIE induced damage of popular phase change material Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) in different halogen based plasmas (CF{sub 4}, Cl{sub 2} and HBr) highly diluted by argon. After blanket etching, results of scanning electron microscopy and atomic force microscopy directly showed that the surface of Cl{sub 2} etched samples were roughest with a Ge deficient damaged layer. X-ray photoelectron spectroscopy was performed to investigate the chemical shift of constituent elements. Selected scans over the valence band peaks of Te 3d revealed that electrons were transferred from chalcogenide to halogen and the highest halogenation was observed on the GST etched by CF{sub 4}. The GST films masked with patterned TiN were also etched. High-resolution transmission electron microscopy and surface scan directly showed the line profile and the damaged layer. Almost vertical and smooth sidewall without damaged layer makes HBr a promising gas for GST etch in the fabrication of high-density memory devices.

  20. Visualization of complex DNA damage along accelerated ions tracks

    Science.gov (United States)

    Kulikova, Elena; Boreyko, Alla; Bulanova, Tatiana; Ježková, Lucie; Zadneprianetc, Mariia; Smirnova, Elena

    2018-04-01

    The most deleterious DNA lesions induced by ionizing radiation are clustered DNA double-strand breaks (DSB). Clustered or complex DNA damage is a combination of a few simple lesions (single-strand breaks, base damage etc.) within one or two DNA helix turns. It is known that yield of complex DNA lesions increases with increasing linear energy transfer (LET) of radiation. For investigation of the induction and repair of complex DNA lesions, human fibroblasts were irradiated with high-LET 15N ions (LET = 183.3 keV/μm, E = 13MeV/n) and low-LET 60Co γ-rays (LET ≈ 0.3 keV/μm) radiation. DNA DSBs (γH2AX and 53BP1) and base damage (OGG1) markers were visualized by immunofluorecence staining and high-resolution microscopy. The obtained results showed slower repair kinetics of induced DSBs in cells irradiated with accelerated ions compared to 60Co γ-rays, indicating induction of more complex DNA damage. Confirming previous assumptions, detailed 3D analysis of γH2AX/53BP1 foci in 15N ions tracks revealed more complicated structure of the foci in contrast to γ-rays. It was shown that proteins 53BP1 and OGG1 involved in repair of DNA DSBs and modified bases, respectively, were colocalized in tracks of 15N ions and thus represented clustered DNA DSBs.

  1. Fabrication of nanoporous nuclear track membranes

    International Nuclear Information System (INIS)

    Peng Liangqiang; Wang Shicheng; Ju Xin; Masaru Yoshida; Yasunari Maekawa

    2001-01-01

    Polyethylene terephthalate (PET) and polycarbonate (PC) films were irradiated by S, Kr and Xe ions and were illuminated with ultraviolet light. The normalized track etch rate for PET and PC films etched in different conditions were measured by conductometric experiments. It is shown that normalized track etch rate can be over 1000 for PET films, 2000 for PC films under optimized condition. TEM photographs of copper nanowires electroplated into nanoporous nuclear track membranes show that the narrowest wire diameter of copper nanowires is 20 nm and that the pore diameter calculated by conductometric experiments is in agreement with the wire diameter measured by TEM when the pore diameter is over 30 nm

  2. Optimization of reactive-ion etching (RIE) parameters for fabrication of tantalum pentoxide (Ta2O5) waveguide using Taguchi method

    Science.gov (United States)

    Muttalib, M. Firdaus A.; Chen, Ruiqi Y.; Pearce, S. J.; Charlton, Martin D. B.

    2017-11-01

    In this paper, we demonstrate the optimization of reactive-ion etching (RIE) parameters for the fabrication of tantalum pentoxide (Ta2O5) waveguide with chromium (Cr) hard mask in a commercial OIPT Plasmalab 80 RIE etcher. A design of experiment (DOE) using Taguchi method was implemented to find optimum RF power, mixture of CHF3 and Ar gas ratio, and chamber pressure for a high etch rate, good selectivity, and smooth waveguide sidewall. It was found that the optimized etch condition obtained in this work were RF power = 200 W, gas ratio = 80 %, and chamber pressure = 30 mTorr with an etch rate of 21.6 nm/min, Ta2O5/Cr selectivity ratio of 28, and smooth waveguide sidewall.

  3. Silicon etch process

    International Nuclear Information System (INIS)

    Day, D.J.; White, J.C.

    1984-01-01

    A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

  4. Deep reactive ion etching of silicon moulds for the fabrication of diamond x-ray focusing lenses

    Science.gov (United States)

    Malik, A. M.; Fox, O. J. L.; Alianelli, L.; Korsunsky, A. M.; Stevens, R.; Loader, I. M.; Wilson, M. C.; Pape, I.; Sawhney, K. J. S.; May, P. W.

    2013-12-01

    Diamond is a highly desirable material for use in x-ray optics and instrumentation. However, due to its extreme hardness and resistance to chemical attack, diamond is difficult to form into a structure suitable for x-ray lenses. Refractive lenses are capable of delivering x-ray beams with nanoscale resolution. A moulding technique for the fabrication of diamond lenses is reported. High-quality silicon moulds were made using photolithography and deep reactive ion etching. The study of the etch process conducted to achieve silicon moulds with vertical sidewalls and minimal surface roughness is discussed. Issues experienced when attempting to deposit diamond into a high-aspect-ratio mould by chemical vapour deposition are highlighted. Two generations of lenses have been successfully fabricated using this transfer-moulding approach with significant improvement in the quality and performance of the optics observed in the second iteration. Testing of the diamond x-ray optics on the Diamond Light Source Ltd synchrotron B16 beamline has yielded a line focus of sub-micrometre width.

  5. A Sliding-Mode Triboelectric Nanogenerator with Chemical Group Grated Structure by Shadow Mask Reactive Ion Etching.

    Science.gov (United States)

    Shang, Wanyu; Gu, Guang Qin; Yang, Feng; Zhao, Lei; Cheng, Gang; Du, Zu-Liang; Wang, Zhong Lin

    2017-09-26

    The sliding-mode triboelectric nanogenerator (S-TENG) with grated structure has important applications in energy harvest and active sensors; however its concavo-convex structure leads to large frictional resistance and abrasion. Here, we developed a S-TENG with a chemical group grated structure (S-TENG-CGG), in which the triboelectric layer's triboelectric potential has a positive-negative alternating charged structure. The triboelectric layer of the S-TENG-CGG was fabricated through a reactive ion etching process with a metal shadow mask with grated structure. In the etched region, the nylon film, originally positively charged as in friction with stainless steel, gained opposite triboelectric potential and became negatively charged because of the change of surface functional groups. The output signals of the S-TENG-CGG are alternating and the frequency is determined by both the segment numbers and the moving speed. The applications of the S-TENG-CGG in the charging capacitor and driving calculator are demonstrated. In the S-TENG-CGG, since there is no concavo-convex structure, the frictional resistance and abrasion are largely reduced, which enhances its performances in better stability and longer working time.

  6. Dependence of surface smoothing, sputtering and etching phenomena on cluster ion dosage

    CERN Document Server

    Song, J H; Choi, W K

    2002-01-01

    The dependence of surface smoothing and sputtering phenomena of Si (1 0 0) solid surfaces irradiated by CO sub 2 cluster ions on cluster-ion dosage was investigated using an atomic force microscope. The flux and total ion dosage of impinging cluster ions at the acceleration voltage of 50 kV were fixed at 10 sup 9 ions/cm sup 2 s and were scanned from 5x10 sup 1 sup 0 to 5x10 sup 1 sup 3 ions/cm sup 2 , respectively. The density of hillocks induced by cluster ion impact was gradually increased with the dosage up to 5x10 sup 1 sup 1 ions/cm sup 2 , which caused that the irradiated surface became rough from 0.4 to 1.24 nm in root-mean-square roughness (sigma sub r sub m sub s). At the boundary of the ion dosage of 10 sup 1 sup 2 ions/cm sup 2 , the density of the induced hillocks was decreased and sigma sub r sub m sub s was about 1.21 nm, not being deteriorated further. At the dosage of 5x10 sup 1 sup 3 ions/cm sup 2 , the induced hillocks completely disappeared and the surface became very flat as much as sigma...

  7. Fabrication of Molds with 25-nm Dot-Pitch Pattern by Focused Ion Beam and Reactive Ion Etching for Nanoimprint Using Metallic Glass

    Science.gov (United States)

    Fukuda, Yasuyuki; Saotome, Yasunori; Nishiyama, Nobuyuki; Saidoh, Noriko; Makabe, Eiichi; Inoue, Akihisa

    2012-08-01

    Here we attempted to fabricate molds (dies) of nanodot arrays with a 25-nm pitch and to nanoimprint metallic glass for developing bit-patterned media with an ultrahigh recording density of 1 Tbit/in.2. The mold-fabricating process consisted of mask patterning by focused ion beam assisted chemical vapor deposition (FIB-CVD) and reactive ion etching (RIE). We investigated the feasibility of a Pt-deposited metal etching mask on SiO2 on Si and diamond like carbon (DLC) on Al2O3 substrates, and achieved isolated convex nanodot arrays with a 25-nm pitch and an aspect ratio of 1.8 by RIE with O2 plasma on a DLC/Al2O3 substrate. Subsequently, we nanoimprinted Pt-based metallic glass by using the fabricated molds and successfully replicated fine concave nanohole arrays. The results suggest that the FIB-CVD/RIE process is a promising technique for fabricating ultrafine nanopatterned molds, and metallic glasses are ideal nanoimprintable materials for mass producing nanodevices such as bit-patterned media.

  8. In situ particle generation during reactive ion etching of SiO sub 2

    Energy Technology Data Exchange (ETDEWEB)

    Resnick, P J [Sandia National Labs., Albuquerque, NM (United States); Anderson, H M [New Mexico Univ., Albuquerque, NM (United States). Dept. of Chemical and Nuclear Engineering

    1992-01-01

    Particulate contamination during IC fabrication is generally acknowledged as a major contributor to yield loss. In particular, plasma processes have the potential for generating copious quantities of process induced particulates. Ideally, in order to effectively control process generated particulate contamination, a fundamental understanding of the particulate generation and transport is essential. Although a considerable amount of effort has been expended to study particles in laboratory apparatus, only a limited amount of work has been performed in production line equipment with production processes. In these experiments, a Drytek Quad Model 480 single wafer etcher was used to etch blanket thermal SiO{sub 2} films on 150 mm substrates in fluorocarbon discharges. The effects of rf power, reactor pressure, and feed gas composition on particle production rates were evaluated. Particles were measured using an HYT downstream particle flux monitor. Surface particle deposition was measured using a Tencor Surfscan 4500, as well as advanced ex situ techniques. Particle morphology and composition were also determined ex situ. Response surface methodology was utilized to determine the process conditions under which particle generation was most pronounced. The use of in situ and ex situ techniques has provided some insight into the mechanisms involved for particle generation and particle dynamics within the plasma during oxide etching.

  9. A Versatile Technology Based on Deep Reactive Ion Etching and Anodic Bonding for the Application of Micromixers and Microfilters

    Directory of Open Access Journals (Sweden)

    Safae MERZOUK

    2014-05-01

    Full Text Available A technology for the fabrication of silicon micromixers and microfilters is presented with their applications being analyzed. The versatility of this technology is observed with the use of two different photolithographic masks where active microfluidic components have been developed. The silicon micromixers and microfilters were developed and manufactured by photolithography (PL and deep-reactive ion etching (DRIE and then bonded onto sand-blasted glass wafers by anodic bonding. The fluidic flow within the specialized microchannel was observed under an optical microscope with micromixing using two differently colored dyes and the microfiltration of poly (D, L lactic-co-glycolic acid microparticles (MP-PLGA for size-sorting and separation Finally, the microfiltering device was injected with a whole blood sample for the separation of larger leukocyte cells.

  10. Fabrication of Super-Hydrophobic Microchannels via Strain-Recovery Deformations of Polystyrene and Oxygen Reactive Ion Etch.

    Science.gov (United States)

    Chakraborty, Anirban; Xiang, Mingming; Luo, Cheng

    2013-08-19

    In this article, we report a simple approach to generate micropillars (whose top portions are covered by sub-micron wrinkles) on the inner surfaces of polystyrene (PS) microchannels, as well as on the top surface of the PS substrate, based on strain-recovery deformations of the PS and oxygen reactive ion etch (ORIE). Using this approach, two types of micropillar-covered microchannels are fabricated. Their widths range from 118 μm to 132 μm, depths vary from 40 μm to 44 μm, and the inclined angles of their sidewalls are from 53° to 64°. The micropillars enable these microchannels to have super-hydrophobic properties. The contact angles observed on the channel-structured surfaces are above 162°, and the tilt angles to make water drops roll off from these channel-structured substrates can be as small as 1°.

  11. Radial dose distribution around an energetic heavy ion and an ion track structure model

    Energy Technology Data Exchange (ETDEWEB)

    Furukawa, Katsutoshi [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; Ohno, Shin-ichi; Namba, Hideki; Taguchi, Mitsumasa; Watanabe, Ritsuko

    1997-03-01

    Ionization currents produced in a small wall-less ionization chamber located at varying distance from the 200 MeV Ni{sup 12+} ion`path traversing Ar gas were measured and utilized to construct a track structure model. Using the LET value of 200 MeV Ni{sup 12+} and G(Fe{sup 3+}) in Fricke solutions (= 15.4) for fast electrons, we estimate G(Fe{sup 3+}) for this ion to be 5.0. (author)

  12. Polypropylene Track Membranes for Mikro and Ultrafiltration of Chemically Aggressive Agents

    CERN Document Server

    Kravets, L I; Apel, P Yu

    2000-01-01

    A production process for track membranes on the basis of chemically resistant polymer polypropylene has been developed. Research in all stages of the formation of the polypropylene track membranes has been conducted: the main principles of the process of chemical etching of polypropylene irradiated with accelerated ions have been investigated, the most effective structure of the etchant for a selective etching of the heavy ion tracks has been selected, the parameters of etching have been optimized. A method for sensibilization of latent tracks in polypropylene by effect of solvents has been developed. It helps to reach a significant increase in etching selectivity. A method for destruction of an absorbed chromocontaining layer on the surface of polypropylene track membranes formed during etching has been elaborated. Experimental samples of the membranes for micro and ultrafiltration have been obtained and their properties have been studied in course of their exploitation in chemically aggressive agents. For t...

  13. Neutron irradiations of proton-sensitive track etch detectors: Results of the joint European/USA/Canadian irradiations organized by EURADOS-CENDOS (1986)

    International Nuclear Information System (INIS)

    Piesch, E.

    1987-09-01

    In 1986, the EURADOS-CENDOS group organized a joint neutron irradiation of proton-sensitive track etch detectors particularly CR-39 and CN-85. The purpose of this experiment was to investigate the energy response and the background track density of plastics under development for use as personnel neutron dosemeters. Dosemeters from 13 laboratories in the European Communities, the USA and Canada were sent to five laboratories and irradiated with monoenergetic neutrons of 144 keV, 250 keV, 570 keV, 1.2 MeV, 5.3 MeV, 14.7 MeV, and with Cf-252 neutrons, in the dose equivalent range between 1.5 mSv and 4.2 mSv. The report consists of short papers from each participant giving a description of the dosemeter used, the processing and evaluation method employed and a discussion of the measurement results. (orig.) [de

  14. Characterization of selective reactive ion etching effects on delta-doped GaAs/AlGaAs MODFET layers

    Science.gov (United States)

    Agarwala, S.; Tong, M.; Ballegeer, D. G.; Nummila, K.; Ketterson, A. A.; Adesida, I.

    1993-04-01

    The effects of selective reactive ion etching (SRIE) using SiCl4/SiF4 plasma on delta-doped GaAs/Al0.3Ga0.7As modulation-doped field-effect transistor (MODFET) structures and devices have been investigated. The results are compared with those of corresponding conventionally doped MODFETs. Hall measurements were conducted at 300 and 77 K to characterize the change in the transport properties of the two-dimensional electron gas due to low energy ion bombardment during the SRIE process. Delta-doped structures showed a smaller change in sheet carrier density and mobility compared to conventionally doped structures. Direct current and high frequency measurements were performed on the SRIE gate-recessed MODFETs. No significant change in threshold voltage was observed for the delta-doped MODFETs in contrast to an increase of about 300 mV for the conventionally doped MODFETs processed at a plasma self-bias voltage of -90 V and a 1200% overetch time. Maximum dc extrinsic transconductance and unity current gain cutoff frequency did not change with SRIE processing for either of the structures.

  15. Microdosimetry for a carbon ion beam using track-etched detectors

    Czech Academy of Sciences Publication Activity Database

    Ambrožová, Iva; Vondráček, V.; Šefl, M.; Štěpán, Václav; Pachnerová Brabcová, Kateřina; Ploc, Ondřej; Incerti, S.; Davídková, Marie

    2015-01-01

    Roč. 166, 1-4 (2015), s. 247-252 ISSN 0144-8420 R&D Projects: GA MŠk LD12008; GA MŠk(CZ) LG13031 Grant - others:GA MŠk(CZ) LM2010005 Institutional support: RVO:61389005 Keywords : linear energy transfer * spectra * HIMAC * SOBP Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 0.894, year: 2015

  16. From ‘petal effect’ to ‘lotus effect’ on the highly flexible Silastic S elastomer microstructured using a fluorine based reactive ion etching process

    Science.gov (United States)

    Frankiewicz, Christophe; Zoueshtiagh, Farzam; Talbi, Abdelkrim; Streque, Jérémy; Pernod, Philippe; Merlen, Alain

    2014-11-01

    A fluorine-based reactive ion etching (RIE) process has been applied on a new family of silicone elastomers named ‘Silastic S’ for the first time. Excellent mechanical properties are the principal advantage of this elastomer. The main objective of this study was (i) to develop a new process with an electrodeposited thin Nickel (Ni) layer as a mask to obtain a more precise pattern transfer for deep etching (ii) to investigate the etch rates and the etch profiles obtained under various plasma conditions (gas mixture ratios and pressure). The resulting process exhibits etch rates that range from 20 µm h-1 to 40 µm h-1. The process was optimized to obtain anisotropic profiles of the edges. Finally, it is shown that (iii) the wetting contact angle could be easily modified with this process from 103° to 162°, with a hysteresis that ranges from 2° to 140°. The process is, at present, the only reported solution to reproduce the ‘petal effect’ (high contact angle hysteresis value) on a highly flexible substrate. A possibility to control the contact angle hysteresis from the ‘petal effect’ to the ‘lotus effect’ (low contact angle hysteresis value) has been investigated to allow a precise control on the required energy to pin or unpin the contact line of water droplets. This opens multiple possibilities to exploit this elastomer in many microfluidics applications.

  17. Secondary ion mass spectrometry combined with alpha track detection for isotope abundance ratio analysis of individual uranium-bearing particles.

    Science.gov (United States)

    Esaka, Fumitaka; Magara, Masaaki

    2014-03-01

    Secondary ion mass spectrometry (SIMS) was used in combination with alpha track detection for the efficient analysis of uranium-bearing particles with higher (235)U abundances in environmental samples. A polycarbonate film containing particles was prepared and placed in contact with a CR-39 plastic detector. After exposure for 28 days, the detector was etched in a NaOH solution and each uranium-bearing particle was identified through observation of the alpha tracks recorded in the detector. A portion of the film containing each uranium-bearing particle was cut out and put onto a glassy carbon planchet. The films on the planchet were decomposed through plasma ashing for subsequent uranium abundance ratio analysis with SIMS. The alpha track-SIMS analysis of 10 uranium-bearing particles in a sample taken from a nuclear facility enabled n((235)U)/n((238)U) abundance ratios in the range 0.0072-0.25 to be detected, which were significantly higher than those obtained by SIMS without alpha track detection. The duration of the whole analytical process for analysis of 10 particles was about 32 days. The detection efficiency was calculated to be 27.1±6.5%, based on the analysis of the particles in uranium reference materials. The detection limits, defined as the diameter of the particle which produces alpha tracks more than one for a 28-days exposure, were estimated to be 0.8, 0.9, 1.1, 2.1 and 3.0 μm for the particles having the same uranium abundance ratios with NBL CRM U850, U500, U350, U050 and U010 reference materials, respectively. The use of alpha track detection for subsequent SIMS analysis is an inexpensive and an efficient way to measure uranium-bearing particles with higher (235)U abundances. Copyright © 2013 Elsevier B.V. All rights reserved.

  18. The separation of heavy ion tracks in nuclear emulsions by means of the pulsed electric field

    International Nuclear Information System (INIS)

    Akopova, A.B.; Magradze, N.V.; Melkumyan, L.V.; Prokhorenko, Y.P.

    1976-01-01

    The pulsed electric field (PEF) technique is developed for the separation of heavy ion tracks from the intense background caused by high energy electrons, protons and γ-radiation. The tracks of Ne, Cr, Ar-ions accelerated at the Dubna Nuclear Reactions Laboratory have been separated from the background, the voltage of the applied PEF being 10 5 V/cm. (orig.) [de

  19. Effective SERS-active substrates composed of hierarchical micro/nanostructured arrays based on reactive ion etching and colloidal masks.

    Science.gov (United States)

    Zhang, Honghua; Liu, Dilong; Hang, Lifeng; Li, Xinyang; Liu, Guangqiang; Cai, Weiping; Li, Yue

    2016-09-30

    A facile route has been proposed for the fabrication of morphology-controlled periodic SiO2 hierarchical micro/nanostructured arrays by reactive ion etching (RIE) using monolayer colloidal crystals as masks. By effectively controlling the experimental conditions of RIE, the morphology of a periodic SiO2 hierarchical micro/nanostructured array could be tuned from a dome-shaped one to a circular truncated cone, and finally to a circular cone. After coating a silver thin layer, these periodic micro/nanostructured arrays were used as surface-enhanced Raman scattering (SERS)-active substrates and demonstrated obvious SERS signals of 4-Aminothiophenol (4-ATP). In addition, the circular cone arrays displayed better SERS enhancement than those of the dome-shaped and circular truncated cone arrays due to the rougher surface caused by physical bombardment. After optimization of the circular cone arrays with different periodicities, an array with the periodicity of 350 nm exhibits much stronger SERS enhancement and possesses a low detection limit of 10(-10) M 4-ATP. This offers a practical platform to conveniently prepare SERS-active substrates.

  20. Range to cone length relations for light ions in CR-39

    International Nuclear Information System (INIS)

    Gil, L.R.; Marques, A.

    1988-01-01

    Curves ''range x cone lenght'' and ''diameter x cone lenght'' are calculated for tracks left by low energy light ions in CR-39. The calculations cover ions from helium to iron and are performed for 6.25 N NaOH at 70 0 C and a standard etching time but can be easily extended to other etching conditions. (author) [pt

  1. Silver ion mediated shape control of platinum nanoparticles: Removal of silver by selective etching leads to increased catalytic activity

    Energy Technology Data Exchange (ETDEWEB)

    Grass, Michael E.; Yue, Yao; Habas, Susan E.; Rioux, Robert M.; Teall, Chelsea I.; Somorjai, G.A.

    2008-01-09

    A procedure has been developed for the selective etching of Ag from Pt nanoparticles of well-defined shape, resulting in the formation of elementally-pure Pt cubes, cuboctahedra, or octahedra, with a largest vertex-to-vertex distance of {approx}9.5 nm from Ag-modified Pt nanoparticles. A nitric acid etching process was applied Pt nanoparticles supported on mesoporous silica, as well as nanoparticles dispersed in aqueous solution. The characterization of the silica-supported particles by XRD, TEM, and N{sub 2} adsorption measurements demonstrated that the structure of the nanoparticles and the mesoporous support remained conserved during etching in concentrated nitric acid. Both elemental analysis and ethylene hydrogenation indicated etching of Ag is only effective when [HNO{sub 3}] {ge} 7 M; below this concentration, the removal of Ag is only {approx}10%. Ethylene hydrogenation activity increased by four orders of magnitude after the etching of Pt octahedra that contained the highest fraction of silver. High-resolution transmission electron microscopy of the unsupported particles after etching demonstrated that etching does not alter the surface structure of the Pt nanoparticles. High [HNO{sub 3}] led to the decomposition of the capping agent, polyvinylpyrollidone (PVP); infrared spectroscopy confirmed that many decomposition products were present on the surface during etching, including carbon monoxide.

  2. High colloidal stability of gold nanorods coated with a peptide-ethylene glycol: Analysis by cyanide-mediated etching and nanoparticle tracking analysis.

    Science.gov (United States)

    Free, Paul; Conger, Gao; Siji, Wu; Zhang, Jing Bo; Fernig, David G

    2016-10-01

    The stability of gold nanorods was assessed following coating with various charged or uncharged ligands, mostly peptides. Highly stable monodispersed gold nanorods were obtained by coating CTAB-stabilized gold nanorods with a pentapeptide with C-terminal ethylene glycol units (peptide-EG). UV-vis spectroscopy of these nanorods suspended in saline solutions indicated no signs of aggregation, and they were easily purified using size-exclusion chromatography. A more stringent measure of nanorod stability involved observing changes in the UV-vis absorbance of gold nanorods subjected to etching with cyanide. The λmax absorbance of peptide-EG coated nanorods red-shifted in etchant solution. The hypothesis that changes in the nanorod aspect ratio led to this red-shift was confirmed by TEM analysis, which showed pit formation along the transverse axis. The etching process was followed in solution using nanoparticle tracking analysis. The red-shift was shown to occur while the particles remained mono-dispersed, and so was not due to aggregation. Adding both etchant solution and peptide-EG to the nanorods was further shown to allow modulation of the Δλmax red-shift and increase the etchant resistance of peptide-EG nanorods. Thus, very stable gold nanorods can be produced using the peptide-EG coating approach and their optical properties modulated with etchant. Copyright © 2016 Elsevier B.V. All rights reserved.

  3. Ion-Exchange-Induced Selective Etching for the Synthesis of Amino-Functionalized Hollow Mesoporous Silica for Elevated-High-Temperature Fuel Cells.

    Science.gov (United States)

    Zhang, Jin; Liu, Jian; Lu, Shanfu; Zhu, Haijin; Aili, David; De Marco, Roland; Xiang, Yan; Forsyth, Maria; Li, Qingfeng; Jiang, San Ping

    2017-09-20

    As differentiated from conventional synthetic processes, amino-functionalized hollow mesoporous silica (NH 2 -HMS) has been synthesized using a new and facile strategy of ion-exchange-induced selective etching of amino-functionalized mesoporous silica (NH 2 -meso-silica) by an alkaline solution. Nuclear magnetic resonance (NMR) spectroscopy and in situ time-resolved small-angle X-ray scattering (SAXS) reveal that ion-exchange-induced selective etching arises from the gradient distribution of OH - in the NH 2 -meso-silica nanospheres. Moreover, the ion-exchange-induced selective etching mechanism is verified through a successful synthesis of hollow mesoporous silica. After infiltration with phosphotungstic acid (PWA), PWA-NH 2 -HMS nanoparticles are dispersed in the poly(ether sulfone)-polyvinylpyrrolidone (PES-PVP) matrix, forming a hybrid PWA-NH 2 -HMS/PES-PVP nanocomposite membrane. The resultant nanocomposite membrane with an optimum loading of 10 wt % of PWA-NH 2 -HMS showed an enhanced proton conductivity of 0.175 S cm -1 and peak power density of 420 mW cm -2 at 180 °C under anhydrous conditions. Excellent durability of the hybrid composite membrane fuel cell has been demonstrated at 200 °C. The results of this study demonstrated the potential of the facile synthetic strategy in the fabrication of NH 2 -HMS with controlled mesoporous structure for application in nanocomposite membranes as a technology platform for elevated-temperature proton exchange membrane fuel cells.

  4. Field and laboratory tests of etched track detectors for 222Rn: summer-vs-winter variations and tightness effects in Maine houses

    International Nuclear Information System (INIS)

    Hess, C.T.; Fleischer, R.L.; Turner, L.G.

    1985-01-01

    Effects of tightness of homes of bedrock character on indoor 222 Rn concentrations were sought in 70 homes in the state of Maine by means of four 6- to 8-month-long surveys over a 1.5-yr period. Laboratory experiments were also performed that document the reliability of the track etching system used for the measurements. In this survey the Rn in tight homes was on the average 3.5 times that in drafty ones, and areas with granitic bedrock led to homes having 2.3 times the Rn as for homes on chlorite-biotite-rich bedrock. Winter-to-summer ratios ranged from 0.5-7, and averaged 1.5, implying that surveys of individual homes require a full year of monitoring

  5. Longitudinally Controlled Modification of Cylindrical and Conical Track-Etched Poly(ethylene terephthalate) Pores Using an Electrochemically Assisted Click Reaction.

    Science.gov (United States)

    Coceancigh, Herman; Tran-Ba, Khanh-Hoa; Siepser, Natasha; Baker, Lane A; Ito, Takashi

    2017-10-31

    In this study, the longitudinally controlled modification of the inner surfaces of poly(ethylene terephthalate) (PET) track-etched pores was explored using an electrochemically assisted Cu(I)-catalyzed azide-alkyne cycloaddition (CuAAC) click reaction. Cylindrical or conical PET track-etched pores were first decorated with ethynyl groups via the amidation of surface -COOH groups, filled with a solution containing Cu(II) and azide-tagged fluorescent dye, and then sandwiched between comb-shaped and planar gold electrodes. Cu(I) was produced at the comb-shaped working electrode by the reduction of Cu(II); it diffused along the pores toward the other electrode and catalyzed CuAAC between an azide-tagged fluorescent dye and a pore-tethered ethynyl group. The modification efficiency of cylindrical pores (ca. 1 μm in diameter) was assessed from planar and cross-sectional fluorescence microscope images of modified membranes. Planar images showed that pore modification took place only above the teeth of the comb-shaped electrode with a higher reaction yield for longer Cu(II) reduction times. Cross-sectional images revealed micrometer-scale gradient modification along the pore axis, which reflected a Cu(I) concentration profile within the pores, as supported by finite-element computer simulations. The reported approach was applicable to the asymmetric modification of cylindrical pores with two different fluorescent dyes in the opposite directions and also for the selective visualization of the tip and base openings of conical pores (ca. 3.5 μm in base diameter and ca. 1 μm in tip diameter). The method based on electrochemically assisted CuAAC provides a controlled means to fabricate asymmetrically modified nanoporous membranes and, in the future, will be applicable for chemical separations and the development of sequential catalytic reactors.

  6. Longitudinally Controlled Modification of Cylindrical and Conical Track-Etched Poly(ethylene terephthalate) Pores Using an Electrochemically Assisted Click Reaction

    International Nuclear Information System (INIS)

    Coceancigh, Herman; Tran-Ba, Khanh-Hoa; Columbia University, New York, NY; Siepser, Natasha; Baker, Lane A.; Ito, Takashi

    2017-01-01

    Here in this study, the longitudinally controlled modification of the inner surfaces of poly(ethylene terephthalate) (PET) track-etched pores was explored using an electrochemically assisted Cu(I)-catalyzed azide–alkyne cycloaddition (CuAAC) click reaction. Cylindrical or conical PET track-etched pores were first decorated with ethynyl groups via the amidation of surface -COOH groups, filled with a solution containing Cu(II) and azide-tagged fluorescent dye, and then sandwiched between comb-shaped and planar gold electrodes. Cu(I) was produced at the comb-shaped working electrode by the reduction of Cu(II); it diffused along the pores toward the other electrode and catalyzed CuAAC between an azide-tagged fluorescent dye and a pore-tethered ethynyl group. The modification efficiency of cylindrical pores (ca. 1 μm in diameter) was assessed from planar and cross-sectional fluorescence microscope images of modified membranes. Planar images showed that pore modification took place only above the teeth of the comb-shaped electrode with a higher reaction yield for longer Cu(II) reduction times. Cross-sectional images revealed micrometer-scale gradient modification along the pore axis, which reflected a Cu(I) concentration profile within the pores, as supported by finite-element computer simulations. The reported approach was applicable to the asymmetric modification of cylindrical pores with two different fluorescent dyes in the opposite directions and also for the selective visualization of the tip and base openings of conical pores (ca. 3.5 μm in base diameter and ca. 1 μm in tip diameter). Lastly, the method based on electrochemically assisted CuAAC provides a controlled means to fabricate asymmetrically modified nanoporous membranes and, in the future, will be applicable for chemical separations and the development of sequential catalytic reactors.

  7. Deep reactive ion etching of 4H-SiC via cyclic SF6/O2 segments

    Science.gov (United States)

    Luna, Lunet E.; Tadjer, Marko J.; Anderson, Travis J.; Imhoff, Eugene A.; Hobart, Karl D.; Kub, Fritz J.

    2017-10-01

    Cycles of inductively coupled SF6/O2 plasma with low (9%) and high (90%) oxygen content etch segments are used to produce up to 46.6 µm-deep trenches with 5.5 µm-wide openings in single-crystalline 4H-SiC substrates. The low oxygen content segment serves to etch deep in SiC whereas the high oxygen content segment serves to etch SiC at a slower rate, targeting carbon-rich residues on the surface as the combination of carbon-rich and fluorinated residues impact sidewall profile. The cycles work in concert to etch past 30 µm at an etch rate of ~0.26 µm min-1 near room temperature, while maintaining close to vertical sidewalls, high aspect ratio, and high mask selectivity. In addition, power ramps during the low oxygen content segment is used to produce a 1:1 ratio of mask opening to trench bottom width. The effect of process parameters such as cycle time and backside substrate cooling on etch depth and micromasking of the electroplated nickel etch mask are investigated.

  8. Detection of coloured tracks of heavy ion particles using photographic colour film

    International Nuclear Information System (INIS)

    Kuge, K.; Yasuda, N.; Kumagai, H.; Nakazawa, K.; Kobayashi, T.; Aoki, N.; Hasegawa, A.

    2001-01-01

    A photographic colour film, which was exposed to heavy ions, reveals a coloured dye image of the ion tracks. Since the colour film consists of several layers and different colours appear on each layer, three-dimensional information on the tracks in the layers can be obtained by the colour image. Previously, we have reported the method for which the tracks in different colours represented differences of track depth and we also discussed the disadvantages of using commercial colour films. Here we present the procedure for a self-made photographic coating and the development formula which can overcome the disadvantages

  9. Sacrificial structures for deep reactive ion etching of high-aspect ratio kinoform silicon x-ray lenses

    DEFF Research Database (Denmark)

    Stöhr, Frederik; Michael-Lindhard, Jonas; Hübner, Jörg

    2015-01-01

    investigated how sacrificial structures in the form of guarding walls and pillars may be utilized to facilitate accurate control of the etch profile. Unlike other sacrificial structuring approaches, no silicon-on-insulator substrates or multiple lithography steps are required. In addition, the safe removal...... of the sacrificial structures was accomplished by thermal oxidation and subsequent selective wet etching. The effects of the dimensions and relative placement of sacrificial walls and pillars on the etching result were determined through systematic experiments. The authors applied this process for exact sidewall...

  10. Solid state nuclear track detectors

    International Nuclear Information System (INIS)

    Medeiros, J.A.; Carvalho, M.L.C.P. de

    1992-12-01

    Solid state nuclear track detectors (SSNTD) are dielectric materials, crystalline or vitreous, which registers tracks of charged nuclear particles, like alpha particles or fission fragments. Chemical etching of the detectors origin tracks that are visible at the optical microscope: track etching rate is higher along the latent track, where damage due to the charged particle increase the chemical potential, and etching rate giving rise to holes, the etched tracks. Fundamental principles are presented as well as some ideas of main applications. (author)

  11. Dry Etching

    DEFF Research Database (Denmark)

    Stamate, Eugen; Yeom, Geun Young

    2016-01-01

    for the higher processing rates in FPDs, high-density plasma processing tools that can handle larger-area substrate uniformly are more intensively studied especially for the dry etching of polysilicon thin films. In the case of FPD processing, the current substrate size ranges from 730 × 920 mm (fourth...... etching requirements, and advantages of dry etching over wet processing. Current status and future trends are also presented....

  12. Study of anomalous nuclear projectile fragments in reactions of 1.85A GeV 40Ar in CR-39 etched track detector

    International Nuclear Information System (INIS)

    Tincknell, M.L.; Price, P.B.

    1983-01-01

    Anomalous nuclear projectile fragments, or ''anomalons,'' were first observed in cosmic rays by nuclear emulsion as a rapid series of nuclear interactions in a short distance. They were later seen as a statistical anomaly in secondary mean-free-paths (mfp's) in cosmic rays, and most recently and convincingly observed in high-statistics experiments using Bevalac beams which showed short mfp's for secondary fragments measured within the first few centimeters after the primary interactions. Because of the controversial and provocative nature of these reports, an alternative technique with different systematic errors and methodology is essential to confirm and illuminate the anomalon phenomenon. CR-39 etched track detector provides this alternative. It allows sampling of the electric charge with high resolution at approximately 600 μm intervals along a nuclear track, and thus successive nuclear charge-changing interactions in short distances can be observed. We report here the observation of depressed secondary mfp's in the first centimeter or so beyond the primary interactions in CR-39, in agreement with the previous emulsion work

  13. Combined analytical and phonon-tracking approaches to model thermal conductivity of etched and annealed nanoporous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Randrianalisoa, Jaona [Centre de Thermique de Lyon, Villeurbanne (France); CETHIL UMR5008, CNRS, INSA-Lyon Universite Lyon 1, Villeurbanne (France); Baillis, Dominique [CETHIL UMR5008, CNRS, INSA-Lyon Universite Lyon 1, Villeurbanne (France)

    2009-10-15

    A combination of analytical and phonon-tracking approaches is proposed to predict thermal conductivity of porous nanostructured thick materials. The analytical approach derives the thermal conductivity as function of the intrinsic properties of the material and properties characterizing the phonon interaction with pore walls. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  14. Second-harmonic generation in reactive-ion etched N' ethyl N-ethanol-4-(nitrophenylazo)phenylamino polymer waveguides at telecommunication wavelengths

    Science.gov (United States)

    Cho, Wook-Rae; Ricci, Vincent; Pliška, Tomáš; Canva, Michael; Stegeman, George I.

    1999-09-01

    Second-harmonic generation using modal dispersion phase matching has been demonstrated in reactive-ion etched waveguides based on the organic nonlinear polymer poly (methyl methacrylate)-Disperse Red 1 [N' ethyl N-ethanol-4-(nitrophenylazo)phenylamino]. The measured propagation losses were 6 dB/cm at the fundamental and 10 dB/cm at the second-harmonic wavelength, dramatically less than we obtained previously for the harmonic in photobleached waveguides. A figure of merit of η=0.1%/W for second-harmonic generation was obtained with a modest nonlinearity of 3 pm/V at 1607 nm in a 2 mm long waveguide.

  15. An Ion Beam Tracking System based on a Parallel Plate Avalanche Counter

    Directory of Open Access Journals (Sweden)

    Carter I. P.

    2013-12-01

    Full Text Available A pair of twin position-sensitive parallel plate avalanche counters have been developed at the Australian National University as a tracking system to aid in the further rejection of unwanted beam particles from a 6.5 T super conducting solenoid separator named SOLEROO. Their function is to track and identify each beam particle passing through the detectors on an event-by-event basis. In-beam studies have been completed and the detectors are in successful operation, demonstrating the tracking capability. A high efficiency 512-pixelwide-angle silicon detector array will then be integrated with the tracking system for nuclear reactions studies of radioactive ions.

  16. A novel deep reactive ion etched (DRIE) glass micro-model for two-phase flow experiments.

    Science.gov (United States)

    Karadimitriou, N K; Joekar-Niasar, V; Hassanizadeh, S M; Kleingeld, P J; Pyrak-Nolte, L J

    2012-09-21

    In the last few decades, micro-models have become popular experimental tools for two-phase flow studies. In this work, the design and fabrication of an innovative, elongated, glass-etched micro-model with dimensions of 5 × 35 mm(2) and constant depth of 43 microns is described. This is the first time that a micro-model with such depth and dimensions has been etched in glass by using a dry etching technique. The micro-model was visualized by a novel setup that allowed us to monitor and record the distribution of fluids throughout the length of the micro-model continuously. Quasi-static drainage experiments were conducted in order to obtain equilibrium data points that relate capillary pressure to phase saturation. By measuring the flow rate of water through the flow network for known pressure gradients, the intrinsic permeability of the micro-model's flow network was also calculated. The experimental results were used to calibrate a pore-network model and test its validity. Finally, we show that glass-etched micro-models can be valuable tools in single and/or multi-phase flow studies and their applications.

  17. Transport of secondary electrons and reactive species in ion tracks

    Science.gov (United States)

    Surdutovich, Eugene; Solov'yov, Andrey V.

    2015-08-01

    The transport of reactive species brought about by ions traversing tissue-like medium is analysed analytically. Secondary electrons ejected by ions are capable of ionizing other molecules; the transport of these generations of electrons is studied using the random walk approximation until these electrons remain ballistic. Then, the distribution of solvated electrons produced as a result of interaction of low-energy electrons with water molecules is obtained. The radial distribution of energy loss by ions and secondary electrons to the medium yields the initial radial dose distribution, which can be used as initial conditions for the predicted shock waves. The formation, diffusion, and chemical evolution of hydroxyl radicals in liquid water are studied as well. COST Action Nano-IBCT: Nano-scale Processes Behind Ion-Beam Cancer Therapy.

  18. Monte-Carlo Simulations of Heavy Ions Track Structures and Applications

    Science.gov (United States)

    Plante, Ianik; Cucinotta, Francia A.

    2013-01-01

    In space, astronauts are exposed to protons, high ]energy heavy (HZE) ions that have a high charge (Z) and energy (E), and secondary radiation, including neutrons and recoil nuclei produced by nuclear reactions in spacecraft walls or in tissue. The astronauts can only be partly shielded from these particles. Therefore, on travelling to Mars, it is estimated that every cell nucleus in an astronaut fs body would be hit by a proton or secondary electron (e.g., electrons of the target atoms ionized by the HZE ion) every few days and by an HZE ion about once a month. The risks related to these heavy ions are not well known and of concern for long duration space exploration missions. Medical ion therapy is another situation where human beings can be irradiated by heavy ions, usually to treat cancer. Heavy ions have a peculiar track structure characterized by high levels of energy ]deposition clustering, especially in near the track ends in the so ]called eBragg peak f region. In radiotherapy, these features of heavy ions can provide an improved dose conformation with respect to photons, also considering that the relative biological effectiveness (RBE) of therapeutic ions in the plateau region before the peak is sufficiently low. Therefore, several proton and carbon ion therapy facilities are under construction at this moment

  19. Evaluation of Additional Track Parameters from Fluorescent Nuclear Track Detectors to Determine the LET of Individual Ions.

    Science.gov (United States)

    Greilich, Steffen; Jansen, Jeannette; Neuholz, Alexander; Stadler, Alexander; Mescher, Henning; Klimpki, Grischa

    2017-10-27

    The measurement of single-track intensity in fluorescence nuclear track detectors can yield relative linear energy transfer (LET)-spectra with small line-width. The absolute determination of LET is, however, currently hampered by the inter-detector variability of crystal coloration and hence detector sensitivity. We therefore investigated the LET response of three additional quantities (average width and the variation of intensity and width along single tracks) using detectors irradiated with mono-energetic ion beams with LETs from 1.5 to 150 keV/μm in alumina. All quantities showed in fact smaller inter-detector variability, but at the same time larger line-width and limited dynamic range as the average intensity along a track. The additional quantities might therefore serve as a helpful complement, but not as a replacement for the current approach. © The Author 2017. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  20. Development of Nanoporous Polymer Membranes by Swift Heavy Ion Irradiation

    Science.gov (United States)

    Dinesh, Divya; Predeep, P.

    2011-10-01

    This study reveals the preparation of conical pores in polyethylene terephthalate (PET) by track etching. The polymer membrane is etched from one side by keeping between the clamps of conductivity cell followed by irradiation with swift heavy ion of 197Au. Electrical stopping supports chemical stopping. During etching process current is measured as a function of time till a sharp increase -breakthrough-observed. After etching membranes are thoroughly washed with stopping solution and water. Resultant films are characterized using Optical microscope and field emission scanning electron microscopy. Polymer films with uniform pores can be a cheaper templating material in the fields of photonic crystals and micro- electronics.

  1. Dependence of yield of nuclear track-biosensors on track radius and analyte concentration

    Czech Academy of Sciences Publication Activity Database

    Garcia-Arellano, H.; Munoz, G. H.; Fink, Dietmar; Vacík, Jiří; Hnatowicz, Vladimír; Alfonta, L.; Kiv, A.

    2018-01-01

    Roč. 420, č. 4 (2018), s. 69-75 ISSN 0168-583X R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:61389005 Keywords : biosensor * ion track * etching * enzyme * nanofluidics Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders OBOR OECD: Nuclear physics Impact factor: 1.109, year: 2016

  2. Dose-rate effects on the bulk etch-rate of CR-39 track detector exposed to low-LET radiations

    CERN Document Server

    Yamauchi, T; Oda, K; Ikeda, T; Honda, Y; Tagawa, S

    1999-01-01

    The effect of gamma-rays and pulsed electrons has been investigated on the bulk etch rate of CR-39 detector at doses up to 100 kGy under various dose-rate between 0.0044 and 35.0 Gy/s. The bulk etch rate increased exponentially with the dose at every examined dose-rates. It was reveled to be strongly depend on the dose-rate: the bulk etch rate was decreased with increasing dose-rate at the same total dose. A primitive model was proposed to explain the dose-rate effect in which oxygen dissolved was assumed to dominate the damage formation process.

  3. Non-invasive monitoring of therapeutic carbon ion beams in a homogeneous phantom by tracking of secondary ions

    Science.gov (United States)

    Gwosch, K.; Hartmann, B.; Jakubek, J.; Granja, C.; Soukup, P.; Jäkel, O.; Martišíková, M.

    2013-06-01

    Radiotherapy with narrow scanned carbon ion beams enables a highly accurate treatment of tumours while sparing the surrounding healthy tissue. Changes in the patient’s geometry can alter the actual ion range in tissue and result in unfavourable changes in the dose distribution. Consequently, it is desired to verify the actual beam delivery within the patient. Real-time and non-invasive measurement methods are preferable. Currently, the only technically feasible method to monitor the delivered dose distribution within the patient is based on tissue activation measurements by means of positron emission tomography (PET). An alternative monitoring method based on tracking of prompt secondary ions leaving a patient irradiated with carbon ion beams has been previously suggested. It is expected to help in overcoming the limitations of the PET-based technique like physiological washout of the beam induced activity, low signal and to allow for real-time measurements. In this paper, measurements of secondary charged particle tracks around a head-sized homogeneous PMMA phantom irradiated with pencil-like carbon ion beams are presented. The investigated energies and beam widths are within the therapeutically used range. The aim of the study is to deduce properties of the primary beam from the distribution of the secondary charged particles. Experiments were performed at the Heidelberg Ion Beam Therapy Center, Germany. The directions of secondary charged particles emerging from the PMMA phantom were measured using an arrangement of two parallel pixelated silicon detectors (Timepix). The distribution of the registered particle tracks was analysed to deduce its dependence on clinically important beam parameters: beam range, width and position. Distinct dependencies of the secondary particle tracks on the properties of the primary carbon ion beam were observed. In the particular experimental set-up used, beam range differences of 1.3 mm were detectable. In addition, variations

  4. Measurement of energy deposition near heavy ion tracks

    International Nuclear Information System (INIS)

    Metting, N.F.; Brady, L.A.; Rossi, H.H.; Kliauga, P.J.; Howard, J.; Wong, M.; Schimmerling, W.; Rapkin, M.

    1985-01-01

    In November of 1982 work was begun in collaboration with Columbia University and Lawrence Berkeley Laboratory to use microdosimetric methods to measure energy deposition of heavy ions produced at LBL's Bevalac Biomedical Facility. Last year the authors reported preliminary results indicating that secondary charged particle equilibrium was probably obtained using this experimental setup, but that there seemed to be poor spatial resolution in the solid state position-sensitive detector. Further analysis of the measurements taken in August 1983 shows that because of this electronic noise in the position-sensitive detector, only the 56 Fe data yielded useful microdosimetric spectra

  5. Amorphous track predictions in ‘libamtrack’ for alanine relative effectiveness in ion beams

    DEFF Research Database (Denmark)

    Herrmann, Rochus; Greilich, Steffen; Grzanka, Leszek

    2011-01-01

    Solid state dosimetery in therapeutic ion beams is seriously hampered by ionisation density effects. In most cases the use of empirical corrections is limited and therefore model predictions, especially from amorphous track models (ATMs), play a major role. Due to its high saturation dose...

  6. Investigation on heavy ion irradiation for producing nuclear track membrane at HI-13 tandem accelerator at CIAE

    International Nuclear Information System (INIS)

    Zhang Canzhe

    1997-10-01

    Some technical parameters and experimental results of heavy ion irradiation to produce nuclear track membrane at HI-13 tandem accelerator at CIAE are given, including the selection of heavy ions, the effect of energy and beam intensity on properties of nuclear track membrane, and the means for increasing irradiation uniformity. For production of nuclear track membrane, S ion beam with energy of 3.5∼4.5 MeV/N were used. The pore density and uniformity of nuclear track membrane produced at HI-13 Tandem Accelerator are 10 5 ∼10 8 cm -2 and ∼80% respectively. (9 refs., 4 figs., 1 tab.)

  7. Impact of time and space evolution of ion tracks in nonvolatile memory cells approaching nanoscale

    International Nuclear Information System (INIS)

    Cellere, G.; Paccagnella, A.; Murat, M.; Barak, J.; Akkerman, A.; Harboe-Sorensen, R.; Virtanen, A.; Visconti, A.; Bonanomi, M.

    2010-01-01

    Swift heavy ions impacting on matter lose energy through the creation of dense tracks of charges. The study of the space and time evolution of energy exchange allows understanding the single event effects behavior in advanced microelectronic devices. In particular, the shrinking of minimum feature size of most advanced memory devices makes them very interesting test vehicles to study these effects since the device and the track dimensions are comparable; hence, measured effects are directly correlated with the time and space evolution of the energy release. In this work we are studying the time and space evolution of ion tracks by using advanced non volatile memories and Monte Carlo simulations. Experimental results are very well explained by the theoretical calculations.

  8. CR-39 track detector calibration for H, He, and C ions from 0.1-0.5 MeV up to 5 MeV for laser-induced nuclear fusion product identification.

    Science.gov (United States)

    Baccou, C; Yahia, V; Depierreux, S; Neuville, C; Goyon, C; Consoli, F; De Angelis, R; Ducret, J E; Boutoux, G; Rafelski, J; Labaune, C

    2015-08-01

    Laser-accelerated ion beams can be used in many applications and, especially, to initiate nuclear reactions out of thermal equilibrium. We have experimentally studied aneutronic fusion reactions induced by protons accelerated by the Target Normal Sheath Acceleration mechanism, colliding with a boron target. Such experiments require a rigorous method to identify the reaction products (alpha particles) collected in detectors among a few other ion species such as protons or carbon ions, for example. CR-39 track detectors are widely used because they are mostly sensitive to ions and their efficiency is near 100%. We present a complete calibration of CR-39 track detector for protons, alpha particles, and carbon ions. We give measurements of their track diameters for energy ranging from hundreds of keV to a few MeV and for etching times between 1 and 8 h. We used these results to identify alpha particles in our experiments on proton-boron fusion reactions initiated by laser-accelerated protons. We show that their number clearly increases when the boron fuel is preformed in a plasma state.

  9. Prediction of etching-shape anomaly due to distortion of ion sheath around a large-scale three-dimensional structure by means of on-wafer monitoring technique and computer simulation

    International Nuclear Information System (INIS)

    Kubota, Tomohiro; Ohtake, Hiroto; Araki, Ryosuke; Yanagisawa, Yuuki; Samukawa, Seiji; Iwasaki, Takuya; Ono, Kohei; Miwa, Kazuhiro

    2013-01-01

    A system for predicting distortion of a profile during plasma etching was developed. The system consists of a combination of measurement and simulation. An ‘on-wafer sheath-shape sensor’ for measuring the plasma-sheath parameters (sheath potential and thickness) on the stage of the plasma etcher was developed. The sensor has numerous small electrodes for measuring sheath potential and saturation ion-current density, from which sheath thickness can be calculated. The results of the measurement show reasonable dependence on source power, bias power and pressure. Based on self-consistent calculation of potential distribution and ion- and electron-density distributions, simulation of the sheath potential distribution around an arbitrary 3D structure and the trajectory of incident ions from the plasma to the structure was developed. To confirm the validity of the distortion prediction by comparing it with experimentally measured distortion, silicon trench etching under chlorine inductively coupled plasma (ICP) was performed using a sample with a vertical step. It was found that the etched trench was distorted when the distance from the step was several millimetres or less. The distortion angle was about 20° at maximum. Measurement was performed using the on-wafer sheath-shape sensor in the same plasma condition as the etching. The ion incident angle, calculated as a function of distance from the step, successfully reproduced the experimentally measured angle, indicating that the combination of measurement by the on-wafer sheath-shape sensor and simulation can predict distortion of an etched structure. This prediction system will be useful for designing devices with large-scale 3D structures (such as those in MEMS) and determining the optimum etching conditions to obtain the desired profiles. (paper)

  10. Damage threshold and structure of swift heavy ion tracks in Al2O3

    Science.gov (United States)

    Rymzhanov, R. A.; Medvedev, N.; Volkov, A. E.

    2017-11-01

    Structure changes and their formation threshold in swift heavy ion (SHI) tracks in Al2O3 are studied using a combined start-to-end numerical model. The hybrid approach consists of the Monte-Carlo code TREKIS, describing kinetics of the electronic subsystem, and classical Molecular Dynamics for lattice atoms. The developed approach is free from a posteriori fitting parameters. Simulations of Xe 167 MeV ion impacts show that relaxation of an excess lattice energy results in formation of a cylindrical discontinuous disordered region of about 2 nm in diameter. Recent transmission electron microscopy observations agree with these results. The threshold of an SHI track formation is estimated to be ~6.1 keV nm‑1. Calculated x-ray diffraction patterns of irradiated material demonstrate more pronounced damage of the Al atoms sublattice near SHI trajectories. Modeling of Xe ion tracks overlapping demonstrates that the damaged area can be restored to a near virgin state. Estimations give 6.5 nm as the minimal distance between the Xe ion trajectories resulting in recovery of the transformed structure produced by the previous ion.

  11. Nuclear track-based biosensing: an overview

    Czech Academy of Sciences Publication Activity Database

    Fink, Dietmar; Hernandez, G. M.; Arellano, H. G.; Vacík, Jiří; Havránek, Vladimír; Hnatowicz, Vladimír; Kiv, A.; Alfonta, L.

    2016-01-01

    Roč. 171, 1-2 (2016), s. 173-185 ISSN 1042-0150 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk LM2015056 Institutional support: RVO:61389005 Keywords : swift heavy ions * polymers * irradiation * ion tracks * etching * nanopores * enzymes * biosensors * biotechnology Subject RIV: EI - Biotechnology ; Bionics Impact factor: 0.443, year: 2016

  12. A novel technique to estimate the track dimensions induced by heavy ions on UHMWPE

    International Nuclear Information System (INIS)

    Grosso, M.F. del; Chappa, V.C.; Garcia Bermudez, G.; Mazzei, R.O.

    2006-01-01

    The energy deposition of a heavy ion in a latent track gives rise to a central partially melting core zone surrounded by a larger region where some physico-chemical modifications take place. When these latent tracks start to overlap some interference effect occurs. A previous irradiated zone of one latent track can be eliminated by the core zone of others. In the present, work a Monte Carlo simulation program that permits us to determine the track dimensions is described. The core and chemical radii are obtained from fitting the FTIR absorption as a function of fluence. This new method was applied specifically on ultra-high molecular weight polyethylene (UHMWPE) irradiated with a 72 MeV S beam. The inner core radius value obtained was 5 ± 1 nm

  13. Ion-beam enhanced etching for the 3D structuration of lithium niobate; Ionenstrahlverstaerktes Aetzen fuer die 3D-Strukturierung von Lithiumniobat

    Energy Technology Data Exchange (ETDEWEB)

    Gischkat, Thomas

    2010-01-12

    The present thesis deals with the usage of the ion-beam enhanced etching (IBEE) for the 3D structuration of lithium niobate (LiNbO{sub 3}).Hereby the approach of the enhancement of the wet-chemical etching rate due to the irradiation with energetic ions is pursued. This method is very success promising for the realization of micro- and nanostructures with perpendicular structural walls as well as small roughnesses. The aim of this thesis consisted therein to form the foundations for the realization of three-dimensional micro- and nanostructures (for instance: Layer systems and photonic crystals) in LiNbO{sub 3} with high optical quality and to demonstrate on selected examples. Conditions for the success of the IBEE structuration technique is first of all the understanding of the defect formation under ion irradiation as well as the radiation-induced structure changes in the crystal and the change of the chemical resistance connected with this. For this the defect formation was studied in dependence on th ion mass, the ion energy, and the irradiation temperature. Thermally induced influences and effects on the radiation damage, as they can occur in intermediate steps in the complex processing, must be known and were studied by means of subsequent temperature treatment. The results from the defect studies were subsequently applied for the fabrication of micro- and nanostructures in LiNbO{sub 3}. Shown is the realization of lateral structure with nearly perpendicular structure walls as well as the realization of thin membranes and slits. The subsequent combination of lateral structuration with the fabrication of thin membranes and slits allowed the three-dimensional structuration of LiNbO{sub 3}. This is exemplarily shown for a microresonator and for a 2D photonic crystal with below lying air slit. [German] Die vorliegende Arbeit beschaeftigt sich mit der Ausnutzung des ionenstrahlverstaerkten Aetzens (IBEE: Ion Beam Enhanced Etching) fuer die 3D-Strukturierung von

  14. Dependence of yield of nuclear track-biosensors on track radius and analyte concentration

    Science.gov (United States)

    García-Arellano, H.; Muñoz H., G.; Fink, D.; Vacik, J.; Hnatowicz, V.; Alfonta, L.; Kiv, A.

    2018-04-01

    In swift heavy ion track-based polymeric biosensor foils with incorporated enzymes one exploits the correlation between the analyte concentration and the sensor current, via the enrichment of charged enzymatic reaction products in the track's confinement. Here we study the influence of the etched track radius on the biosensor's efficiency. These sensors are analyte-specific only if both the track radii and the analyte concentration exceed certain threshold values of ∼15 nm and ∼10-6 M (for glucose sensing), respectively. Below these limits the sensor signal stems un-specifically from any charge carrier. In its proper working regime, the inner track walls are smoothly covered by enzymes and the efficiency is practically radius independent. Theory shows that the measured current should be slightly sub-proportional to the analyte concentration; the measurements roughly reconfirm this. Narrower tracks (∼5-15 nm radius) with reduced enzyme coverage lead to decreasing efficiency. Tiny signals visible when the tracks are etched to effective radii between 0 and ∼5 nm are tentatively ascribed to enzymes bonded to surface-near nano-cracks in the polymer foil, resulting from its degradation due to aging, rather than to the tracks. Precondition for this study was the accurate determination of the etched track radii, which is possible only by a nanofluidic approach. This holds to some extent even for enzyme-covered tracks, though in this case most of the wall charges are compensated by enzyme bonding.

  15. Kinetics of Electrons from Plasma Discharge in a Latent Track Region Induced by Swift Heavy ION Irradiation

    Directory of Open Access Journals (Sweden)

    Minárik Stanislav

    2015-08-01

    Full Text Available While passing swift heavy ion through a material structure, it produces a region of radiation affected material which is known as a "latent track". Scattering motions of electrons interacting with a swift heavy ion are dominant in the latent track region. These phenomena include the electron impurity and phonon scattering processes modified by the interaction with the ion projectile as well as the Coulomb scattering between two electrons.

  16. Effects of dry etching on GaAs

    International Nuclear Information System (INIS)

    Pang, S.W.; Lincoln, G.A.; McClelland, R.W.; DeGraff, P.D.; Geis, M.W.; Piacentini, W.J.

    1983-01-01

    A number of dry etching techniques have been developed and their ability to produce anisotropic etch profiles has been demonstrated. In addition to etch anisotropy, an important consideration for device and circuit fabrication is whether a sample suffers radiation damage by exposure to ions, electrons, or ultraviolet light during etching. In this study we evaluate the degree of radiation damage induced in GaAs by ion-beam etching with Ar, reactive-ion etching with CF 4 and CHF 3 , and ion-beam-assisted etching with Ar and Cl 2 . In addition, we propose and demonstrate processing techniques which can be used after dry etching to reduce the effects of radiation damage. GaAs samples were etched under a variety of etching conditions. The degree of radiation damage caused by etching was determined by evaluating Schottky diodes fabricated on the etched surfaces and by using deep level transient spectroscopy to characterize trapping centers. It was found that the barrier heights and breakdown voltages of Schottky diodes were changed after etching. Also, an increase in the density of traps was observed. Variations in the etching conditions had a strong effect on the measured characteristics of the samples

  17. Effect of valence holes kinetics on material excitation in tracks of swift heavy ions

    International Nuclear Information System (INIS)

    Rymzhanov, R.A.; Medvedev, N.A.; Volkov, A.E.

    2015-01-01

    A considerable part of the excess energy of the electronic subsystem of a solid penetrated by a swift heavy ion (SHI) is accumulated in valence holes. Spatial redistribution of these holes can affect subsequent relaxation, resulting in ionizations of new electrons by hole impacts as well as energy transfer to the target lattice. A new version of the Monte Carlo code TREKIS is applied to study this effect in Al 2 O 3 for SHI tracks. The complex dielectric function (CDF) formalism is used to calculate the cross sections of interaction of involved charged particles (an ion, electrons, holes) with the target giving us ability to take into account collective response of a target to excitations. We compare the radial distributions of the densities and energies of excited electrons and valence holes at different times to those obtained under the assumption of immobile holes used in earlier works. The comparison shows a significant difference between these distributions within the track core, where the majority of slow electrons and valence holes are located at femtosecond timescales after the ion impact. The study demonstrates that the energy deposited by valence holes into the lattice in nanometric tracks is comparable to the energy transferred by excited electrons. Radii of structure transformations in tracks produced by these energy exchange channels are in a good agreement with experiments.

  18. Laser etching as an alternative

    International Nuclear Information System (INIS)

    Dreyfus, R.W.; Kelly, R.

    1989-01-01

    Atoms and molecules are removed from surfaces by intense laser beams. This fact has been known almost since the discovery of the laser. Within the present overall area of interest, namely understanding ion-beam-induced sputtering, it is equally important both to contrast laser etching to ion sputtering and to understand the underlying physics taking place during laser etching. Beyond some initial broad observations, the specific discussion is limited to, and aimed at, two areas: (i) short wavelength, UV, laser-pulse effects and (ii) energy fluences sufficiently small that only monolayers (and not microns) of material are removed per pulse. 38 refs.; 13 figs.; 5 tabs

  19. Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products

    Science.gov (United States)

    Nakazaki, Nobuya; Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

    2014-12-01

    Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively coupled Cl2 plasmas, as a function of rf bias power or ion incident energy Ei, by varying feed gas flow rate, wafer stage temperature, and etching time. The experiments revealed two modes of surface roughening which occur depending on Ei: one is the roughening mode at low Ei rms) roughness of etched surfaces increases with increasing Ei, exhibiting an almost linear increase with time during etching (t rms surface roughness decreases substantially with Ei down to a low level etch rate versus √{Ei } curve, and in the evolution of the power spectral density distribution of surfaces. Such changes from the roughening to smoothing modes with increasing Ei were found to correspond to changes in the predominant ion flux from feed gas ions Clx+ to ionized etch products SiClx+ caused by the increased etch rates at increased Ei, in view of the results of several plasma diagnostics. Possible mechanisms for the formation and evolution of surface roughness during plasma etching are discussed with the help of Monte Carlo simulations of the surface feature evolution and classical molecular dynamics simulations of etch fundamentals, including stochastic roughening and effects of ion reflection and etch inhibitors.

  20. IODA - a fast, automated and flexible system for ion track analysis on film detectors

    International Nuclear Information System (INIS)

    Guth, H.; Hellmann, A.

    1995-02-01

    The IODA System (Ion Density Analysis) is used to analyse detector films, resulting from experiments at the pulse power generator KALIF (Karlsruhe Light Ion Facility). The system consists of evaluation software and a microcomputer, which controls a microscope, a video interface, and a multiprocessor subsystem. The segmentation of ion tracks is done automatically by means of digital image processing and pattern recognition. After defining an evaluation range and selecting a suitable analysis method, the film is scanned by the microscope for counting the impacts of the underlying image. According to the appearance of the ion tracks on the film, different methods can be selected. The evaluation results representing the ion density are stored in a matrix. The time needed for an evaluation at a high resolution can be shortened by shipping time consuming pattern recognition calculations to the multiprocessor subsystem. The bottlenecks of the system are the data transfer and the speed of the microscope stage. Simple handling of the system even on alphanumeric terminals had been an important design issue. This was implemented by a logically structured menue system including online help features. This report can be used a s a manual to support the user with system operation. (orig.) [de

  1. Preliminary results of ion trajectory tracking in the acceleration region of the VINCY cyclotron

    Directory of Open Access Journals (Sweden)

    Ilić Anđelija Ž.

    2006-01-01

    Full Text Available In an accelerating region of a cyclotron, an ion makes a large number of turns; thus, its n the Runge-Kutta method of the fourth order with the adaptive time step has been developed. The accuracy requirement is simultaneously set on position and momentum calculation. Magnetic fields used as inputs, have been evaluated in terms of the radial fluctuations of the orbital frequency, i.e. their isochronisms. Ion trajectory tracking has been performed for the following four test beams: H-, H+3, 4He+, He+, and 40Ar6+.

  2. Radiation dose-response curves: cell repair mechanisms vs. ion track overlapping

    Science.gov (United States)

    Kowalska, Agata; Czerski, Konrad; Nasonova, Elena; Kutsalo, Polina; Krasavin, Eugen

    2017-12-01

    Chromosome aberrations in human lymphocytes exposed to different doses of particle radiation: 150 MeV and spread out Bragg peak proton beams, 22 MeV/u boron beam and 199 V/u carbon beam were studied. For comparison, an experiment with 60Co γ-rays was also performed. We investigated distributions of aberration frequency and the shape of dose-response curves for the total aberration yield as well as for exchange and non-exchange aberrations, separately. Applying the linear-quadratic model, we could derive a relation between the fitted parameters and the ion track radius which could explain experimentally observed curvature of the dose-response curves. The results compared with physical expectations clearly show that the biological effects of cell repair are much more important than the ion track overlapping. Contribution to the Topical Issue "Dynamics of Systems at the Nanoscale", edited by Andrey Solov'yov and Andrei Korol.

  3. Multi-scale simulation of structural heterogeneity of swift-heavy ion tracks in complex oxides

    Science.gov (United States)

    Wang, Jianwei; Lang, Maik; Ewing, Rodney C.; Becker, Udo

    2013-04-01

    Tracks formed by swift-heavy ion irradiation, 2.2 GeV Au, of isometric Gd2Ti2O7 pyrochlore and orthorhombic Gd2TiO5 were modeled using the thermal-spike model combined with a molecular-dynamics simulation. The thermal-spike model was used to calculate the energy dissipation over time and space. Using the time, space, and energy profile generated from the thermal-spike model, the molecular-dynamics simulations were performed to model the atomic-scale evolution of the tracks. The advantage of the combination of these two methods, which uses the output from the continuum model as an input for the atomistic model, is that it provides a means of simulating the coupling of the electronic and atomic subsystems and provides simultaneously atomic-scale detail of the track structure and morphology. The simulated internal structure of the track consists of an amorphous core and a shell of disordered, but still periodic, domains. For Gd2Ti2O7, the shell region has a disordered pyrochlore with a defect fluorite structure and is relatively thick and heterogeneous with different degrees of disordering. For Gd2TiO5, the disordered region is relatively small as compared with Gd2Ti2O7. In the simulation, ‘facets’, which are surfaces with definite crystallographic orientations, are apparent around the amorphous core and more evident in Gd2TiO5 along [010] than [001], suggesting an orientational dependence of the radiation response. These results show that track formation is controlled by the coupling of several complex processes, involving different degrees of amorphization, disordering, and dynamic annealing. Each of the processes depends on the mass and energy of the energetic ion, the properties of the material, and its crystallographic orientation with respect to the incident ion beam.

  4. Investigation of Nuclear Fragmentation in Relativistic Heavy Ion Collisions Using Plastic - Nuclear - Track Detectors

    CERN Multimedia

    2002-01-01

    In this experiment CR39 plastic nuclear track detectors will be used which are sensitive to detect relativistic nuclear fragments with charges Z@$>$5. They will be analyzed using an automatic track measuring system which was developed at the University of Siegen.\\\\ \\\\ This allows to measure large quantities of tracks in these passive detectors and to perform high statistics experiments. We intend to measure cross sections for the production of nuclear fragments from heavy ion beams at the SPS. \\\\ \\\\ The energy independence of the cross sections predicted by the idea of limiting fragmentation will be tested at high energies. In exposures with different targets we plan to analyze the factorization of the fragmentation cross sections into a target depending factor and a factor depending on the beam particle and the fragment. The cross sections for one proton remov Coulomb dissociation. \\\\ \\\\ We plan to investigate Coulomb dissociation for different targets and different energies. Fragment and projectile charges ...

  5. Silicon dioxide etching yield measurements with inductively coupled fluorocarbon plasmas

    International Nuclear Information System (INIS)

    Chae, Heeyeop; Vitale, Steven A.; Sawin, Herbert H.

    2003-01-01

    Oxide etching yield has been measured directly with inductively coupled fluorocarbon plasmas. The yields measurement technique of this work can provide useful information for feature profile evolution modeling, which is essential to understand various issues in oxide etching such as reactive ion etching (RIE) lag, inverse RIE lag, etch stop, microtrenching, bowing, etc. Etching and deposition yields per ion were measured using quartz crystal microbalance (QCM) as a function of ion bombardment energy, ion-to-neutral flux ratio, and ion-impinging angle. C 2 HF 5 , C 2 F 6 , C 2 H 4 F 2 , and C 4 F 8 were used for the oxide etching. Oxide etching mechanism with those gases is complex because etching and deposition are involved at the same time. In highly selective processes fluorocarbon deposition plays important role in determining etching characteristics. Two fluorocarbon deposition mechanisms are identified in this work: neutral deposition and ion-enhanced deposition. The low-energy ions are believed to enhance the deposition rates by creating active sites and fluorocarbon neutrals deposit on the active sites with higher sticking probability. A surface kinetic model is suggested to explain the ion-enhanced mechanism and shows good agreement with experimental data. Angular yield measurement shows that when fluorocarbon deposition is relatively severe, etching yield decreases significantly as the incident angle increases and deposit fluorocarbon at a high incident angle above 60 deg. C

  6. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  7. Homologous recombination in Arabidopsis seeds along the track of energetic carbon ions

    International Nuclear Information System (INIS)

    Wang Ting; Li Fanghua; Liu Qingfang; Bian Po; Wang Jufang; Wu Yuejin; Wu Lijun; Li Wenjian

    2012-01-01

    Heavy ion irradiation has been used as radiotherapy of deep-seated tumors, and is also an inevitable health concern for astronauts in space mission. Unlike photons such as X-rays and γ-rays, a high linear energy transfer (LET) heavy ion has a varying energy distribution along its track. Therefore, it is important to determine the correlation of biological effects with the Bragg curve energy distribution of heavy ions. In this study, a continuous biological tissue equivalent was constructed using a layered cylinder of Arabidopsis seeds, which was irradiated with carbon ions of 87.5 MeV/nucleon. The position of energy loss peak in the seed pool was determined with CR-39 track detectors. The mutagenic effect in vivo along the path of carbon ions was investigated with the seeds in each layer as an assay unit, which corresponded to a given position in physical Bragg curve. Homologous recombination frequency (HRF), expression level of AtRAD54 gene, germination rate of seeds, and survival rate of young seedlings were used as checking endpoints, respectively. Our results showed that Arabidopsis S0 and S1 plants exhibited significant increases in HRF compared to their controls, and the expression level of AtRAD54 gene in S0 plants was significantly up-regulated. The depth-biological effect curves for HRF and the expression of AtRAD54 gene were not consistent with the physical Bragg curve. Differently, the depth-biological effect curves for the developmental endpoints matched generally with the physical Bragg curve. The results suggested a different response pattern of various types of biological events to heavy ion irradiation. It is also interesting that except for HRF in S0 plants, the depth-biological effect curves for each biological endpoint were similar for 5 Gy and 30 Gy of carbon irradiation.

  8. Influence of Reactive Ion Etching on THz Transmission and Reflection Properties of NiCr Film Deposited on a Dielectric Substrate

    Directory of Open Access Journals (Sweden)

    Jun Gou

    2015-06-01

    Full Text Available Enhanced terahertz (THz absorption of NiCr film deposited on a dielectric substrate has been proven by applying a reactive ion etching (RIE treatment to the dielectric film. Nano – scale nickel – chromium (NiCr thin films are deposited on RIE treated silicon dioxide (SiO2 dielectric substrates to study the transmission and reflection characteristics. Experimental results suggest that both transmission and reflection of NiCr film are weakened by the RIE treatment. The most significant decrease of transmission is observed in 1 ~ 4 THz while that of reflection occurs in 1.7 ~ 2.5 THz band. The decrease of both transmission and reflection is more significant for NiCr film with higher thickness. The RIE treatment, which induces nano – scale surface structures and increases the effective surface area of NiCr film, enhances the absorption and weakens the transmission and reflection of THz radiation.DOI: http://dx.doi.org/10.5755/j01.ms.21.2.6131

  9. Reactive ion etching challenges for half-pitch sub-10-nm line-and-space pattern fabrication using directed self-assembly lithography

    Science.gov (United States)

    Kasahara, Yusuke; Seino, Yuriko; Sato, Hironobu; Kubota, Hitoshi; Kanai, Hideki; Kihara, Naoko; Minegishi, Shinya; Miyagi, Ken; Tobana, Toshikatsu; Shiraishi, Masayuki; Kobayashi, Katsutoshi; Kodera, Katsuyoshi; Yamano, Hitoshi; Kawamonzen, Yoshiaki; Azuma, Tsukasa

    2016-03-01

    Directed self-assembly is a candidate process for sub-15-nm patterning applications. It will be necessary to develop the DSA process fully and consider process integration to adapt the DSA process for use in semiconductor manufacturing. We investigated the reactive ion etching (RIE) process for the fabrication of sub-10-nm metal wires using the DSA process and the process integration requirements for electrical yield verification. We evaluated the process using an organic high-chi block copolymer (BCP) with a lamellar structure. One critical issue during DSA pattern transfer involves the BCP bottom connection. The BCP bottom connections could be removed without BCP mask loss by using the optimum bias power and the optimum BCP film thickness. The sub-10-nm DSA line-and-space (L/S) patterns were successfully transferred to a SiO2 layer with sufficient film thickness for the fabrication of the metal wire. We also evaluated the overlay technique used in the process. The connect patterns and cut patterns were overlaid on 10-nm trenches fabricated by the DSA process.

  10. High Rate Deep Si Etching using Capacitively Coupled Plasma

    Science.gov (United States)

    Sakai, Itsuko; Sakurai, Noriko; Ohiwa, Tokuhisa

    High rate deep Si etching using SF6/O2 gas chemistry by Magnetically-Enhanced Reactive Ion Etch (MERIE) system using a Dipole-Ring Magnet (DRM) is studied. It is capable of etching holes 40 μm in diameter in a Si substrate at etch rates as high as 50 μm/min. It was found that the Si etch reaction is dominated by the density of fluorine radicals, which is realized at high frequency and pressure. In holes with higher aspect ratios, it was found that the Si etch rate at the bottom of holes is determined not only by the supply of fluorine radicals, but is also influenced by an etch-inhibiting effect related to the sidewall of the hole. Using an 8 μm square mask, holes with straight sidewalls were etched to a depth of 60 μm at an etch rate of 24 μm/min.

  11. Value of the Debris of Reduction Sculpture: Thiol Etching of Au Nanoclusters for Preparing Water-Soluble and Aggregation-Induced Emission-Active Au(I) Complexes as Phosphorescent Copper Ion Sensor.

    Science.gov (United States)

    Shu, Tong; Su, Lei; Wang, Jianxing; Lu, Xin; Liang, Feng; Li, Chenzhong; Zhang, Xueji

    2016-06-07

    Chemical etching of gold by thiols has been known to be capable of generating nonluminescent gold(I) complexes, e.g., in size-focusing synthesis of atomically precise gold nanoclusters (GNCs). These nonluminescent gold(I) complexes have usually been considered as useless or worthless byproducts. This study shows a promising potential of thiol etching of GNCs to prepare novel water-soluble and phosphorescent gold(I) materials for sensing application. First, cysteamine-induced etching of GNCs is used to produce nonluminescent oligomeric gold(I)-thiolate complexes. Then, cadmium ion induces the aggregation of these oligomeric complexes to produce highly water-soluble ultrasmall intra-aggregates. These intra-aggregates can phosphoresce both in dilute aqueous solutions and in the solid phase. Studies on the effect of pH on their phosphorescent emission reveal the importance of the interaction between the amino groups of the ligands and cadmium ion for their phosphorescent emission property. Furthermore, Cu(2+) ion is found to quickly quench the phosphorescent emission of the intra-aggregates and simultaneously cause a Cu(2+)-concentration-dependent peak wavelength shift, enabling the establishment of a novel colorimetric sensor for sensitive and selective visual sensing of Cu(2+).

  12. Effects of track structure and cell inactivation on the calculation of heavy ion mutation rates in mammalian cells

    Science.gov (United States)

    Cucinotta, F. A.; Wilson, J. W.; Shavers, M. R.; Katz, R.

    1996-01-01

    It has long been suggested that inactivation severely effects the probability of mutation by heavy ions in mammalian cells. Heavy ions have observed cross sections of inactivation that approach and sometimes exceed the geometric size of the cell nucleus in mammalian cells. In the track structure model of Katz the inactivation cross section is found by summing an inactivation probability over all impact parameters from the ion to the sensitive sites within the cell nucleus. The inactivation probability is evaluated using the dose-response of the system to gamma-rays and the radial dose of the ions and may be equal to unity at small impact parameters for some ions. We show how the effects of inactivation may be taken into account in the evaluation of the mutation cross sections from heavy ions in the track structure model through correlation of sites for gene mutation and cell inactivation. The model is fit to available data for HPRT mutations in Chinese hamster cells and good agreement is found. The resulting calculations qualitatively show that mutation cross sections for heavy ions display minima at velocities where inactivation cross sections display maxima. Also, calculations show the high probability of mutation by relativistic heavy ions due to the radial extension of ions track from delta-rays in agreement with the microlesion concept. The effects of inactivation on mutations rates make it very unlikely that a single parameter such as LET or Z*2/beta(2) can be used to specify radiation quality for heavy ion bombardment.

  13. Controlled Structure of Electrochemically Deposited Pd Nanowires in Ion-Track Templates

    Science.gov (United States)

    Duan, Jinglai; Lyu, Shuangbao; Yao, Huijun; Mo, Dan; Chen, Yonghui; Sun, Youmei; Maaz, K.; Maqbool, M.; Liu, Jie

    2015-12-01

    Understanding and controlling structural properties of the materials are crucial in materials research. In this paper, we report that crystallinity and crystallographic orientation of Pd nanowires can be tailored by varying the fabrication conditions during electrochemical deposition in polycarbonate ion-track templates. By changing the deposition temperature during the fabrication process, the nanowires with both single- and poly-crystallinities were obtained. The wires with preferred crystallographic orientations along [111], [100], and [110] directions were achieved via adjusting the applied voltage and temperature during electrochemical deposition.

  14. Ion track symmetric and asymmetric nanopores in polyethylene terephthalate foils for versatile applications

    Energy Technology Data Exchange (ETDEWEB)

    Apel, P.Yu., E-mail: apel@nrmail.jinr.ru [Flerov Laboratory of Nuclear Reactions, JINR, Joliot-Curie Str. 6, 141980 Dubna (Russian Federation); The International University “Dubna”, Universitetskaya Str. 19, Dubna 141980 (Russian Federation); Blonskaya, I.V.; Dmitriev, S.N.; Orelovich, O.L. [Flerov Laboratory of Nuclear Reactions, JINR, Joliot-Curie Str. 6, 141980 Dubna (Russian Federation); Sartowska, B.A. [Institute of Nuclear Chemistry and Technology, Dorodna Str. 16, 03-195 Warsaw (Poland)

    2015-12-15

    In this report we present several fabrication methods which allow production of ion track nanopore membranes with different pore configurations. Polymer foils, typically polyethylene terephthalate with a thickness of 5–23 μm, are irradiated with accelerated heavy ions (energy of 1–10 MeV/u) and then subjected to different physico-chemical treatments. Depending on the procedure, symmetric or asymmetric pores with nanoscale-sized narrowing are obtained. The asymmetric configurations include conical, funnel-like and bullet-like shapes. In electrolyte solutions the asymmetric nanopores exhibit diode-like properties which strongly depend on the pore shape. The peculiar features of such pores provide a basis for various applications.

  15. Production of multi-, oligo- and single-pore membranes using a continuous ion beam

    Czech Academy of Sciences Publication Activity Database

    Apel, P. Yu.; Ivanov, O.; Lizunov, N. E.; Mamonova, T. I.; Nechaev, A. N.; Olejniczak, K.; Vacík, Jiří; Dmitriev, S. N.

    2015-01-01

    Roč. 365, DEC (2015), s. 641-645 ISSN 0168-583X R&D Projects: GA MŠk LG14004 Institutional support: RVO:61389005 Keywords : ion beam * irradiation * ion track * etching * single nanopore Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.389, year: 2015

  16. Optimization of some electrochemical etching parameters for cellulose derivatives

    International Nuclear Information System (INIS)

    Chowdhury, Annis; Gammage, R.B.

    1978-01-01

    Electrochemical etching of fast neutron induced recoil particle tracks in cellulose derivatives and other polymers provides an inexpensive and sensitive means of fast neutron personnel dosimetry. A study of the shape, clarity, and size of the tracks in Transilwrap polycarbonate indicated that the optimum normality of the potassium hydroxide etching solution is 9 N. Optimizations have also been attempted for cellulose nitrate, triacetate, and acetobutyrate with respect to such electrochemical etching parameters as frequency, voltage gradient, and concentration of the etching solution. The measurement of differential leakage currents between the undamaged and the neutron damaged foils aided in the selection of optimum frequencies. (author)

  17. Science and technology with nuclear tracks in solids

    CERN Document Server

    Buford-Price, P

    2005-01-01

    Fission track dating has greatly expanded its usefulness to geology over the last 40 years. It is central to thermochronology—the use of shortened fission tracks to decipher the thermal history, movement, and provenance of rocks. When combined with other indicators, such as zircon color and (U–Th)/He, a range of temperatures from C to C can be studied. Combining fission track analysis with cosmogenic nuclide decay rates, one can study landscape development and denudation of passive margins. Technological applications have expanded from biological filters, radon mapping, and dosimetry to the use of ion track microtechnology in microlithography, micromachining by ion track etching, microscopic field emission tips, magnetic nanowires as magnetoresistive sensors, microfluidic devices, physiology of ion channels in single cells, and so on. In nuclear and particle physics, relatively insensitive glass detectors have been almost single-handedly responsible for our knowledge of cluster radioactivity, and plastic ...

  18. Track structure based modelling of light ion radiation effects on nuclear and mitochondrial DNA

    Science.gov (United States)

    Schmitt, Elke; Ottolenghi, Andrea; Dingfelder, Michael; Friedland, Werner; Kundrat, Pavel; Baiocco, Giorgio

    2016-07-01

    Space radiation risk assessment is of great importance for manned spaceflights in order to estimate risks and to develop counter-measures to reduce them. Biophysical simulations with PARTRAC can help greatly to improve the understanding of initial biological response to ionizing radiation. Results from modelling radiation quality dependent DNA damage and repair mechanisms up to chromosomal aberrations (e.g. dicentrics) can be used to predict radiation effects depending on the kind of mixed radiation field exposure. Especially dicentric yields can serve as a biomarker for an increased risk due to radiation and hence as an indicator for the effectiveness of the used shielding. PARTRAC [1] is a multi-scale biophysical research MC code for track structure based initial DNA damage and damage response modelling. It integrates physics, radiochemistry, detailed nuclear DNA structure and molecular biology of DNA repair by NHEJ-pathway to assess radiation effects on cellular level [2]. Ongoing experiments with quasi-homogeneously distributed compared to sub-micrometre focused bunches of protons, lithium and carbon ions allow a separation of effects due to DNA damage complexity on nanometre scale from damage clustering on (sub-) micrometre scale [3, 4]. These data provide an unprecedented benchmark for the DNA damage response model in PARTRAC and help understand the mechanisms leading to cell killing and chromosomal aberrations (e.g. dicentrics) induction. A large part of space radiation is due to a mixed ion field of high energy protons and few heavier ions that can be only partly absorbed by the shielding. Radiation damage induced by low-energy ions significantly contributes to the high relative biological efficiency (RBE) of ion beams around Bragg peak regions. For slow light ions the physical cross section data basis in PARTRAC has been extended to investigate radiation quality effects in the Bragg peak region [5]. The resulting range and LET values agree with ICRU data

  19. SU-8 etching in inductively coupled oxygen plasma

    DEFF Research Database (Denmark)

    Rasmussen, Kristian Hagsted; Keller, Stephan Sylvest; Jensen, Flemming

    2013-01-01

    Structuring or removal of the epoxy based, photo sensitive polymer SU-8 by inductively coupled plasma reactive ion etching (ICP-RIE) was investigated as a function of plasma chemistry, bias power, temperature, and pressure. In a pure oxygen plasma, surface accumulation of antimony from the photo......-initiator introduced severe roughness and reduced etch rate significantly. Addition of SF6 to the plasma chemistry reduced the antimony surface concentration with lower roughness and higher etch rate as an outcome. Furthermore the etch anisotropy could be tuned by controlling the bias power. Etch rates up to 800 nm...

  20. Low surface damage dry etched black silicon

    DEFF Research Database (Denmark)

    Plakhotnyuk, Maksym M.; Gaudig, Maria; Davidsen, Rasmus Schmidt

    2017-01-01

    Black silicon (bSi) is promising for integration into silicon solar cell fabrication flow due to its excellent light trapping and low reflectance, and a continuously improving passivation. However, intensive ion bombardment during the reactive ion etching used to fabricate bSi induces surface...... power, during reactive ion etching at non-cryogenic temperature (-20°C), preserves the reflectivity below 1% and improves the effective minority carrier lifetime due to reduced ion energy. We investigate the effect of the etching process on the surface morphology, light trapping, reflectance......, transmittance, and effective lifetime of bSi. Additional surface passivation using atomic layer deposition of Al2O3 significantly improves the effective lifetime. For n-type wafers, the lifetime reaches 12 ms for polished and 7.5 ms for bSi surfaces. For p-type wafers, the lifetime reaches 800 ls for both...

  1. Strategy Selection of Film Irradiation by Accelerated ^{40}Ar^{8+} Ions for Manufacturing of Track Membranes

    CERN Document Server

    Denisov, Yu N; Kalinichenko, V V; Karamysheva, G A; Fedorenko, S B

    2004-01-01

    The industrial cyclotron CYTRACK is dedicated to the production of the track membranes. It is the basic instrument for the industry of membrane products to be consumed in medicine, biotechnology, pharmacology, microelectronics and many other industries. The cyclotron CYTRACK started working in the August of 2002. Argon ions were accelerated to a project energy of 2.4 MeV/nucleon, the extracted beam intensity was about 200 nA, the extraction efficiency totaled \\sim 50 %. In starting up operation the film was exposed in various controlled ways to charged particles with a view to achieving the values of parameters required for production of "Rosa" membranous plasmafilters. The pore uniformity in transverse direction was provided by beam scanning with a scanning magnet voltage of 73 V, the one in the longitudinal direction was provided by constancy of the film motion rate and stability of beam intensity during all the time of exposition.

  2. Anomalous effect of ion velocity on track formation in GeS

    Energy Technology Data Exchange (ETDEWEB)

    Szenes, G., E-mail: szenesgyorgy@caesar.elte.hu [Department of Materials Physics, Eötvös University, P.O. Box 32, H-1518 Budapest (Hungary); Pécz, B. [Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, 1525 Budapest, P.O. Box 49 (Hungary)

    2016-12-15

    Systematic experiments were performed for studying the effect of the projectile velocity (velocity effect, VE) in GeS which has a highly anisotropic conductivity. The prethinned specimens were irradiated by Bi, Au, W, Xe, Ag, Kr, Ni and Fe ions of about E ≈ 1 MeV/nucleon energy. Track radii were measured by transmission electron microscopy. Compared to previous experiments performed with high velocity projectile, there is a marked VE for S{sub e} > 20 keV/nm (S{sub e} – electronic stopping power). However, the VE is gradually reduced and finally disappears as S{sub e} decreases. This effect is described for the first time. The predictions according to the Analytical Thermal Spike Model are in excellent quantitative agreement with the experiments in the range S{sub e} > 20 keV/nm. The anomalous behavior of track evolution at lower values of S{sub e} is attributed to the combination of semiconducting and insulating properties. An explanation of the VE is given based on the Coulomb explosion model.

  3. Measurements of energetic ions produced by high-energy laser pulses by means of solid-state nuclear track detectors

    Czech Academy of Sciences Publication Activity Database

    Szydlowski, A.; Badziak, A.; Parys, P.; Wolowski, J.; Woryna, E.; Jungwirth, Karel; Králiková, Božena; Krása, Josef; Láska, Leoš; Pfeifer, Miroslav; Rohlena, Karel; Skála, Jiří; Ullschmied, Jiří; Boody, F. D.; Gammino, S.; Torrisi, L.

    2004-01-01

    Roč. 7, č. 3 (2004), s. 327-332 ISSN 1093-3611 Institutional research plan: CEZ:AV0Z1010921 Keywords : iodine laser * nuclear track detectors * ions Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.194, year: 2004

  4. Etch pits on caprolactam

    Science.gov (United States)

    van der Heijden, A. E. D. M.; Geertman, R. M.

    1992-09-01

    As an extension of the results on the morphology, we investigated the defect structure of solution-grown caprolactam crystals by means of slight etching in cyclohexane and subsequent microscopic observation of the resulting etch pits on the 200, 110, and faces. In case of the face (which is a cleavage plane), we confirmed that the etch pits are formed around dislocation lines by performing an "etch-and-match" experiment. Information is obtained on morphology and density of etch pits, the presence of grain boundaries, as well as qualitative information on the inclination of the dislocation lines.

  5. Submicroscopic pores grafted using the residual sites produced by swift heavy ions

    International Nuclear Information System (INIS)

    Mazzei, R.; Betz, N.; Bermudez, G. Garcia; Massa, G.; Smolko, E.

    2005-01-01

    To produce nuclear track membranes (NTM) with submicroscopic pores poly(vinylidene difluoride) (PVDF) foils were irradiated with Cl, Ag and Pb ions. Then they were chemically etched for different times and grafted with acrylic acid. The grafting yields were determined by weight measurements as a function of ion fluence, etching time and also analysed using Fourier transform infrared spectroscopy. Both measurements suggest that the acrylic acid was grafted on the pore wall of the NTM using the active sites left by the ion beam

  6. Methods of etching a substrate

    International Nuclear Information System (INIS)

    Cosmo, J.J.; Gambino, R.J.; Harper, J.M.E.

    1979-01-01

    The invention relates to a method of etching a substrate. The substrate is located opposite a target electrode in a vacuum chamber, and the surface of the target electrode is bombarded with energetic particles of atomic dimensions. The target electrode is an intermetallic composition (compound, alloy or finely divided homogeneous mixture) of two metals A and B such that upon bombardment the electrode emits negative ions of metal B which have sufficient energy to produce etching of the substrate. Many target materials are exemplified. Typically the metal A has an electronegativity XA and metal B has an electronegativity XB such that Xb - Xa is greater than about 2.55 electron volts, with the exception of combinations of metals having a fractional ionicity Q less than about 0.314. The source of the energetic particles may be an ionised gas in the vacuum chamber. The apparatus and its mode of operation are described in detail. (U.K.)

  7. Hybrid mask for deep etching

    KAUST Repository

    Ghoneim, Mohamed T.

    2017-08-10

    Deep reactive ion etching is essential for creating high aspect ratio micro-structures for microelectromechanical systems, sensors and actuators, and emerging flexible electronics. A novel hybrid dual soft/hard mask bilayer may be deposited during semiconductor manufacturing for deep reactive etches. Such a manufacturing process may include depositing a first mask material on a substrate; depositing a second mask material on the first mask material; depositing a third mask material on the second mask material; patterning the third mask material with a pattern corresponding to one or more trenches for transfer to the substrate; transferring the pattern from the third mask material to the second mask material; transferring the pattern from the second mask material to the first mask material; and/or transferring the pattern from the first mask material to the substrate.

  8. Development and tests of an anode readout TPC with high track separability for large solid angle relativistic ion experiments

    International Nuclear Information System (INIS)

    Lindenbaum, S.J.; Foley, K.J.; Eiseman, S.E.

    1988-01-01

    We have developed, constructed and tested an anode readout TPC with high track separability which is suitable for large solid angle relativistic ion experiments. The readout via rows of short anode wires parallel to the beam has been found in tests to allow two-track separability of ∼2-3 mm. The efficiency of track reconstruction for events from a target, detected inside the MPS 5 KG magnet, is estimated to be >90% for events made by incident protons and pions. 15 GeV/c x A Si ion beams at a rate of ∼25 K per AGS pulse were permitted to course through the chamber and did not lead to any problems. When the gain was reduced to simulate the total output of a minimum ionizing particle, many Si ion tracks were also detected simultaneously with high efficiency. The resolution along the drift direction (parallel to the MPS magnetic field and perpendicular to the beam direction) was <1 mm and the resolution along the other direction /perpendicular/ to the beam direction was <1 mm also. 3 refs., 5 figs

  9. New approach of modeling charged particles track development in CR-39 detectors

    International Nuclear Information System (INIS)

    Azooz, A.A.; Hermsdorf, D.; Al-Jubbori, M.A.

    2013-01-01

    In this work, previous modeling of protons and alpha particles track length development in CR-39 solid state nuclear track detectors SSNTD is modified and further extended. The extension involved the accommodation of heavier ions into the model. These ions include deuteron, lithium, boron, carbon, nitrogen and oxygen ions. The new modeling does not contain any case sensitive free fitting parameters. Model calculation results are found to be in good agreement with both experimental data and SRIM software range energy dependence predictions. The access to a single unified and differentiable track length development equation results in the ability to obtain direct results for track etching rates. - Highlights: • New modeling of ions track length evolution measured by different authors. • Ions considered are p, d, α, Li, B, C, N, O. • Equations obtained to describe L(t) and etch rate for all ions at wide energy range. • Equations obtained do not involve any free fitting parameters. • Ions range values obtained compare well with results of SRIM software

  10. A bio-inspired, sensitive, and selective ionic gate driven by silver (I) ions.

    Science.gov (United States)

    Gao, Loujun; Li, Pei; Zhang, Yuqi; Xiao, Kai; Ma, Jie; Xie, Ganhua; Hou, Guanglei; Zhang, Zhen; Wen, Liping; Jiang, Lei

    2015-02-04

    By grafting specific response DNA on the interior surface of ion track-etched conical nanochannels, a highly sensitive and selective ionic gate that can be driven by silver (I) ions is demonstrated. The switches between the OFF-state and the ON-state are mainly dependent on silver (I) ions and cysteine. Such a biomimetic nanodevice shows potential for application in sensing, pharmaceuticals, and sterilization. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Label-free histamine detection with nanofluidic diodes through metal ion displacement mechanism

    OpenAIRE

    Ali, Mubarak; Ramirez Hoyos, Patricio; Duznovic, Ivana; Nasir, Saima; Mafe, Salvador; Ensinger, Wolfgang

    2017-01-01

    [EN] We design and characterize a nanofluidic device for the label-free specific detection of histamine neurotransmitter based on a metal ion displacement mechanism. The sensor consists of an asymmetric polymer nanopore fabricated via ion track-etching technique. The nanopore sensor surface having metal-nitrilotriacetic (NTA-Ni2+) chelates is obtained by covalent coupling of native carboxylic acid groups with N-alpha,N-alpha-bis(carboxymethyl)-L-lysine (BCML), followed by exposure to Ni2+ ion...

  12. Advanced dry etching studies for micro- and nano-systems

    DEFF Research Database (Denmark)

    Rasmussen, Kristian Hagsted

    and even contaminate the surface with metal flakes after resist removal. Ion beam etching has also been used for etching of steel without any problems with redeposition. For steel the etch rate was low which reduced the selectivity to the photo resist. Sapphire, a crystal of aluminum oxide, has a very low...... sputter rate limiting the applicability of ion beam etching. Structuring of sapphire is however interesting for fabrication of prepatterned substrates for gallium nitride epitaxial growth, among others. Such a substrate needs a certain structure height which can be obtained by introducing reactive ion....... However, just generating an oxygen plasma does not result in a controllable etch and may give rise to a poor surface for later use. It may be necessary to introduce other gases such as SF6 to reduce surface roughness. Roughness can also be introduced by the mask in the form of redeposition of material...

  13. Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products

    OpenAIRE

    Nakazaki, Nobuya; Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

    2014-01-01

    Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively coupled Cl{2} plasmas, as a function of rf bias power or ion incident energy E{i} , by varying feed gas flow rate, wafer stage temperature, and etching time. The experiments revealed two modes of surface roughening which occur depending on E{i} : one is the roughening mode at low E{i}  

  14. Simulating radial dose of ion tracks in liquid water simulated with Geant4-DNA: A comparative study

    Energy Technology Data Exchange (ETDEWEB)

    Incerti, S., E-mail: incerti@cenbg.in2p3.fr [CNRS, IN2P3, CENBG, UMR 5797, F-33170 Gradignan (France); Université de Bordeaux, CENBG, UMR 5797, F-33170 Gradignan (France); Psaltaki, M. [National Technical University of Athens, Athens (Greece); Gillet, P.; Barberet, Ph. [CNRS, IN2P3, CENBG, UMR 5797, F-33170 Gradignan (France); Université de Bordeaux, CENBG, UMR 5797, F-33170 Gradignan (France); Bardiès, M. [CRCT, UMR 1037 INSERM, Université Paul Sabatier, Toulouse (France); Bernal, M.A. [Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, SP (Brazil); Bordage, M.-C. [CRCT, UMR 1037 INSERM, Université Paul Sabatier, Toulouse (France); Breton, V. [Clermont Université, CNRS/IN2P3, Laboratoire de Physique Corpusculaire, UMR6533, Aubière (France); Davidkova, M. [Department of Radiation Dosimetry, Nuclear Physics Institute ASCR, Na Truhlářce 39/64, Praha 8 (Czech Republic); Delage, E. [Clermont Université, CNRS/IN2P3, Laboratoire de Physique Corpusculaire, UMR6533, Aubière (France); El Bitar, Z. [Institut Pluridisciplinaire Hubert Curien, 23 rue du Loess, BP28, 67037 Strasbourg Cedex 2 (France); Francis, Z. [Université Saint Joseph, Faculty of Sciences, Department of Physics, Beirut (Lebanon); Guatelli, S. [Centre for Medical Radiation Physics, University of Wollongong, NSW (Australia); Ivanchenko, A. [Geant4 Associates International Ltd (United Kingdom); Ivanchenko, V. [Geant4 Associates International Ltd (United Kingdom); Ecoanalytica, 119899 Moscow (Russian Federation); and others

    2014-08-15

    An accurate modeling of radial energy deposition around ion tracks is a key requirement of radiation transport software used for simulations in radiobiology at the sub-cellular scale. The work presented in this paper is part of the on-going benchmarking of the “Geant4-DNA” physics processes and models, which are available in the Geant4 Monte Carlo simulation toolkit for the low energy transport of particles in liquid water. We present for the first time radial dose distributions of incident ion tracks simulated with “Geant4-DNA”. Simulation results are compared to other results available in the literature, obtained from analytical calculations, step-by-step Monte Carlo simulations and measurements. They show a reasonable agreement with reference data.

  15. Direct determination of bulk etching rate for LR-115-II solid state ...

    Indian Academy of Sciences (India)

    The thickness of the removed layer of the LR-115-II solid state nuclear track detector during etching is measured directly with a rather precise instrument. Dependence of bulk etching rate on temperature of the etching solution is investigated. It has been found that the bulk etching rate is 3.2 m/h at 60°C in 2.5 N NaOH of ...

  16. Effect of ion velocity on creation of point defects halos of latent tracks in LiF

    Czech Academy of Sciences Publication Activity Database

    Volkov, A.E.; Schwartz, K.; Medvedev, Nikita; Trautmann, C.

    2017-01-01

    Roč. 407, Sep (2017), s. 80-85 ISSN 0168-583X R&D Projects: GA MŠk LG15013; GA MŠk(CZ) LM2015083 Institutional support: RVO:68378271 Keywords : swift heavy ion * electronic stopping * track * LiF * color centers * defect halo Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) Impact factor: 1.109, year: 2016

  17. Crosslinked Functional Polymer Nanowire Formation Along Single Particle Tracks

    International Nuclear Information System (INIS)

    Tagawa, S.

    2006-01-01

    The use of high-energy charged particles has extended to many fields in recent years. In medicine, non-homogeneous energy deposition along an ion trajectory (ion track) plays a crucial role in cancer radiotherapy, allowing for high spatial selectivity in the distribution of the radiation dose. The direct observation and application of ion tracks in media have also attracted interest in materials science, where it is known as nuclear track fabrication. Since the discovery that high-energy particle leave latent tracks in inorganic and organic polymer materials, the technique has also been applied to the production of micro- and nano-sized pores in materials through chemical etching of the tracks. The clear correlation between the etched pore and the characteristics of the incident charged particle has been utilized for measurement of the velocity and mass of the incident particles, and such organic film detectors are widely used in dosimetry, and in particular for galactic cosmic rays in space. The scope of the present paper is the direct nano-structure formation based on crosslinking reactions induced in nano-scale ultra-small spaces of single particle tracks. We have developed the simple one-step formation processes of nanowires without using any chemical etching or refilling processes. The present technique is in striking contrast to the previous 'nuclear track' nanofabrication techniques. According to its high feasibility for the preparation of 1-D nanowires based on 'any' kinds of polymeric materials, the present paper demonstrates the formation of not only simple polymer nanowires but also ceramic and/or multi-segment multi-functional nanowires

  18. New method of transmission of substances through membranes with nuclear tracks

    International Nuclear Information System (INIS)

    Fernandez, M.A.; Gutierrez, M.C.; Magni, M.; Celma, G.; Mazzei, Ruben; Garcia Bermudez, Gerardo; Torres, A.

    2007-01-01

    In order to produce membranes with pores that react selectively to changes in the environment allowing the transmission of substances and continuing with a systematic study that include different polymers and monomers, the residual active sites produced by heavy ion beams, that remain after the etching process, were used to start the grafting process. To produce tracks, foils of polypropylene (PP) were irradiated with 208 Pb of 25.62 MeV/n. Then were etched and grafted with acrylic acid (AA) monomer. Experimental curves of grafting yield as a function of grafting time with the etching time as a parameter were measured. Also, the grafting yield as a function of the fluence and etching time was obtained. In addition transmission of solutions, with different pH, through PP grafted foils was measured. (author) [es

  19. Evaluation of different polymers for fast neutron personnel dosimetry using electrochemical etching

    International Nuclear Information System (INIS)

    Gammage, R.B.; Cotter, S.J.

    1977-01-01

    There is considerable optimism for the enhancement by electrochemical etching of fast neutron-induced recoil tracks in polycarbonate for the purpose of personnel dosimetry. The threshold energy, however, is rather high. A desirable improvement would be to lower this energy below 1 MeV. With this objective in mind, we have commenced an investigation of cellulose acetate, triacetate, and acetobutyrate in addition to polycarbonate. These cellulose derivatives are chemically more reactive and physically weaker than polycarbonate. It might, therefore, be possible to initiate the electrochemical amplification at the sites of shorter recoil atom damage tracks than is possible with polycarbonate. Some characteristics important for electrochemically etching in aqueous electrolytes are listed. Chemical etching is combined with treeing, an electrical breakdown process that starts when the dielectric strength is exceeded. These mechanical and electrical properties pertain to the dry plastics. The absorption of water molecules and electrolyte ions will cause these values to be reduced. Results and conclusions of the study are presented

  20. Measurement of track structure parameters of low and medium energy helium and carbon ions in nanometric volumes.

    Science.gov (United States)

    Hilgers, G; Bug, M U; Rabus, H

    2017-09-12

    Ionization cluster size distributions produced in the sensitive volume of an ion-counting wall-less nanodosimeter by monoenergetic carbon ions with energies between 45 MeV and 150 MeV were measured at the TANDEM-ALPI ion accelerator facility complex of the LNL-INFN in Legnaro. Those produced by monoenergetic helium ions with energies between 2 MeV and 20 MeV were measured at the accelerator facilities of PTB and with a 241 Am alpha particle source. C 3 H 8 was used as the target gas. The ionization cluster size distributions were measured in narrow beam geometry with the primary beam passing the target volume at specified distances from its centre, and in broad beam geometry with a fan-like primary beam. By applying a suitable drift time window, the effective size of the target volume was adjusted to match the size of a DNA segment. The measured data were compared with the results of simulations obtained with the PTB Monte Carlo code PTra. Before the comparison, the simulated cluster size distributions were corrected with respect to the background of additional ionizations produced in the transport system of the ionized target gas molecules. Measured and simulated characteristics of the particle track structure are in good agreement for both types of primary particles and for both types of the irradiation geometry. As the range in tissue of the ions investigated is within the typical extension of a spread-out Bragg peak, these data are useful for benchmarking not only 'general purpose' track structure simulation codes, but also treatment planning codes used in hadron therapy. Additionally, these data sets may serve as a data base for codes modelling the induction of radiation damages at the DNA-level as they almost completely characterize the ionization component of the nanometric track structure.

  1. Measurement of track structure parameters of low and medium energy helium and carbon ions in nanometric volumes

    Science.gov (United States)

    Hilgers, G.; Bug, M. U.; Rabus, H.

    2017-10-01

    Ionization cluster size distributions produced in the sensitive volume of an ion-counting wall-less nanodosimeter by monoenergetic carbon ions with energies between 45 MeV and 150 MeV were measured at the TANDEM-ALPI ion accelerator facility complex of the LNL-INFN in Legnaro. Those produced by monoenergetic helium ions with energies between 2 MeV and 20 MeV were measured at the accelerator facilities of PTB and with a 241Am alpha particle source. C3H8 was used as the target gas. The ionization cluster size distributions were measured in narrow beam geometry with the primary beam passing the target volume at specified distances from its centre, and in broad beam geometry with a fan-like primary beam. By applying a suitable drift time window, the effective size of the target volume was adjusted to match the size of a DNA segment. The measured data were compared with the results of simulations obtained with the PTB Monte Carlo code PTra. Before the comparison, the simulated cluster size distributions were corrected with respect to the background of additional ionizations produced in the transport system of the ionized target gas molecules. Measured and simulated characteristics of the particle track structure are in good agreement for both types of primary particles and for both types of the irradiation geometry. As the range in tissue of the ions investigated is within the typical extension of a spread-out Bragg peak, these data are useful for benchmarking not only ‘general purpose’ track structure simulation codes, but also treatment planning codes used in hadron therapy. Additionally, these data sets may serve as a data base for codes modelling the induction of radiation damages at the DNA-level as they almost completely characterize the ionization component of the nanometric track structure.

  2. Dry etched SiO2 Mask for HgCdTe Etching Process

    Science.gov (United States)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

    2016-09-01

    A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

  3. Plasma etching an introduction

    CERN Document Server

    Manos, Dennis M

    1989-01-01

    Plasma etching plays an essential role in microelectronic circuit manufacturing. Suitable for researchers, process engineers, and graduate students, this book introduces the basic physics and chemistry of electrical discharges and relates them to plasma etching mechanisms. Throughout the volume the authors offer practical examples of process chemistry, equipment design, and production methods.

  4. Microfabrication of Si and GaAs by Plasma Etching Process Using Bacterial Cells as an Etching Mask Material

    Science.gov (United States)

    Matsutani, Akihiro; Takada, Ayako

    2012-08-01

    We demonstrated that bacterial cells can be used as a mask material for microfabrication of GaAs and Si by a Cl2 inductively coupled plasma (ICP) etching process. The etching rate of Escherichia coli cells was similar to that of electron beam resist or nanoimprint resist. We also demonstrated the degradation of bacterial cells by low-pressure plasma treatment using O2, Ar, air, and H2O for removal of bacterial cells as the etching mask material. Bacterial cells were efficiently degraded by ions in the low-pressure discharge plasma. The proposed process using bacterial cells can be expected to be applied to semiconductor dry etching processes.

  5. The black silicon method VI: high aspect ratio trench etching for MEMS applications

    NARCIS (Netherlands)

    Jansen, Henricus V.; de Boer, Meint J.; Elwenspoek, Michael Curt

    1996-01-01

    Etching high aspect ratio trenches (HART's) in silicon is becoming increasingly important for MEMS applications. Currently, the most important technique is dry reactive ion etching (RIE). This paper presents solutions for the most notorious problems during etching HART's: tilting and the aspect

  6. Visualisation of γH2AX Foci Caused by Heavy Ion Particle Traversal; Distinction between Core Track versus Non-Track Damage

    Science.gov (United States)

    Nakajima, Nakako Izumi; Brunton, Holly; Watanabe, Ritsuko; Shrikhande, Amruta; Hirayama, Ryoichi; Matsufuji, Naruhiro; Fujimori, Akira; Murakami, Takeshi; Okayasu, Ryuichi; Jeggo, Penny; Shibata, Atsushi

    2013-01-01

    Heavy particle irradiation produces complex DNA double strand breaks (DSBs) which can arise from primary ionisation events within the particle trajectory. Additionally, secondary electrons, termed delta-electrons, which have a range of distributions can create low linear energy transfer (LET) damage within but also distant from the track. DNA damage by delta-electrons distant from the track has not previously been carefully characterised. Using imaging with deconvolution, we show that at 8 hours after exposure to Fe (∼200 keV/µm) ions, γH2AX foci forming at DSBs within the particle track are large and encompass multiple smaller and closely localised foci, which we designate as clustered γH2AX foci. These foci are repaired with slow kinetics by DNA non-homologous end-joining (NHEJ) in G1 phase with the magnitude of complexity diminishing with time. These clustered foci (containing 10 or more individual foci) represent a signature of DSBs caused by high LET heavy particle radiation. We also identified simple γH2AX foci distant from the track, which resemble those arising after X-ray exposure, which we attribute to low LET delta-electron induced DSBs. They are rapidly repaired by NHEJ. Clustered γH2AX foci induced by heavy particle radiation cause prolonged checkpoint arrest compared to simple γH2AX foci following X-irradiation. However, mitotic entry was observed when ∼10 clustered foci remain. Thus, cells can progress into mitosis with multiple clusters of DSBs following the traversal of a heavy particle. PMID:23967070

  7. Visualisation of γH2AX foci caused by heavy ion particle traversal; distinction between core track versus non-track damage.

    Directory of Open Access Journals (Sweden)

    Nakako Izumi Nakajima

    Full Text Available Heavy particle irradiation produces complex DNA double strand breaks (DSBs which can arise from primary ionisation events within the particle trajectory. Additionally, secondary electrons, termed delta-electrons, which have a range of distributions can create low linear energy transfer (LET damage within but also distant from the track. DNA damage by delta-electrons distant from the track has not previously been carefully characterised. Using imaging with deconvolution, we show that at 8 hours after exposure to Fe (∼200 keV/µm ions, γH2AX foci forming at DSBs within the particle track are large and encompass multiple smaller and closely localised foci, which we designate as clustered γH2AX foci. These foci are repaired with slow kinetics by DNA non-homologous end-joining (NHEJ in G1 phase with the magnitude of complexity diminishing with time. These clustered foci (containing 10 or more individual foci represent a signature of DSBs caused by high LET heavy particle radiation. We also identified simple γH2AX foci distant from the track, which resemble those arising after X-ray exposure, which we attribute to low LET delta-electron induced DSBs. They are rapidly repaired by NHEJ. Clustered γH2AX foci induced by heavy particle radiation cause prolonged checkpoint arrest compared to simple γH2AX foci following X-irradiation. However, mitotic entry was observed when ∼10 clustered foci remain. Thus, cells can progress into mitosis with multiple clusters of DSBs following the traversal of a heavy particle.

  8. Heavy Ion Track Temperature with the High Level of Specific Inelastic Energy Loss in Materials at the Thermal Spike Model

    CERN Document Server

    Didyk, A Yu; Semina, V K

    2003-01-01

    The thermal spike model in materials under the irradiation by swift heavy ions with high specific energy loss is considered taking into account the temperature dependence along the ion trajectrory. The numerical solutions of the temperature system equations for the temperatures of lattice and electrons are obtained, takinig into account the possible heating of lattice up to the melting and evaporation points, i.e., with the two phase transitions are obtained. The pressure in the volume of heavy ion track and their influence on the changes of thermodynamical parameters are introduced. The influence of defects on the "hot" electron free path is discussed. The numerical analysis of the lattice temperature at low and high temperatures of the thermal conductivity and heat capacity parameter values was carried out.

  9. Heavy ion track temperature with the high level of specific inelastic energy loss in materials at the thermal spike model

    International Nuclear Information System (INIS)

    Didyk, A.Yu.; Robuk, V.N.; Semina, V.K.

    2003-01-01

    The thermal spike model in materials under the irradiation by swift heavy ions with high specific energy loss is considered taking into account the temperature dependence along the ion trajectory. The numerical solutions of the temperature system equations for the temperatures of lattice up to the melting and evaporation points, i.e., with the two phase transitions are obtained. The pressure in the volume of heavy ion track and its influence on the changes of thermodynamical parameters are introduced. The influence of defects on the 'hot' electron free path is discussed. The numerical analysis of the lattice temperature at low and high temperatures of the thermal conductivity and heat capacity parameter values was carried out. (author)

  10. Registration of alpha particles in Makrofol-E nuclear track detectors

    Energy Technology Data Exchange (ETDEWEB)

    Rammah, Y.S. [Physics Department, Faculty of Science, Menoufia University, Shebin El-Koom (Egypt); Abdalla, Ayman M., E-mail: aymanabdalla62@hotmail.com [Physics Department, Faculty of Sciences and Arts, Najran University, P. O. Box. 11001, Najran (Saudi Arabia); Promising Centre for Sensors and Electronic Devices, Faculty of Arts and Sciences, Najran University (Saudi Arabia); Ashraf, O., E-mail: osama.ashraf@edu.asu.edu.eg [Physics Department, Faculty of Education, Ain Shams University, Cairo 11575 (Egypt); Ashry, A.H. [Physics Department, Faculty of Education, Ain Shams University, Cairo 11575 (Egypt)

    2016-06-15

    Highlights: • Makrofol-E detectors have been irradiated with alpha particles and fission fragments. • Fast detection of alpha particles in Makrofol-E detectors. • Bulk etching rate was calculated from fission track diameters. - Abstract: Fast detection of alpha particles in the range from 1 to 5 MeV in Makrofol-E polycarbonate nuclear track detectors (PCTDs) using a new chemical etchant was investigated. {sup 252}Cf and {sup 241}Am-thin open sources were used for irradiating Makrofol-E detectors with fission fragments and alpha particles in air at normal pressure and temperature (NPT). A chain of experimental work has been carried out using new etchants to register alpha particle in short time in Makrofol-E polycarbonate detectors. The etching efficiency were exhibited a clear dependence on the amount of methanol in the etching solution and etching time. The optimized chemical condition obtained at this stage of development for 200 μm Makrofol-E detectors are (8 ml of 10 N NaOH + 2 ml CH{sub 3}OH) etching solutions at 60 °C for 3 h. In this study; it is possible to observe energy detection windows for Makrofol-E detectors according to applied etching duration. Makrofol-E introduced the characteristic Bragg peak, which indicates the advantages of this detector as alpha spectrometer. Consequently, the suggested new etchant can be developed for heavy ions detection and monitoring radon levels and its daughters.

  11. The influence of chemical etching time on efficiency of radon detection using CR-39

    International Nuclear Information System (INIS)

    Reway, Adriana P.; Kappke, Jaqueline; Narloch, Danielle C.; Del Claro, Flavia; Paschuk, Sergei A.; Correa, Janine N.

    2015-01-01

    Natural radiation is the principal source of human exposure to ionizing radiation. Radon is noble radioactive gas that emanates from the soil and rocks entering the atmosphere of dwellings where it could be accumulated. The inhalation of 222 Rn represents a significant health risk. Solid-State Nuclear Track Detectors (SSNTD) represents an efficient method for alpha particle detection and measurements of the activity concentration of 222 Rn. The aim of present work was to study the etching time impact on CR-39 efficiency in radon activity measurements. The investigation was performed using 80 CR-39 detectors, which were exposed to a source of radon. After the exposition, alpha particle tracks development was achieved by chemical etching using 6.25M NaOH solution and ethanol (2%) at 70°C. Etching alpha particle tracks were identified and counted manually using the optical microscope with magnification of 100x and glass overlay mask. The etching time ranged from 7 to 14 hours. The results show that there is an increase in the number of visible tracks with increased etching time. The number of traces obtained for 7 hours and 8 hours of revelation was 1430 +/- 90 and 2090 +/- 160, respectively. However, for etching time of 13 and 14 hours was not observed statistical increase in the number of visible tracks. The number of tracks in this situation was 3630 +/- 180 and 3870 +/- 160 to 13 and 14 hours etching. Thus, for assumed etching parameters, the etching optimal time was observed 14 hours. (author)

  12. Dry etching for microelectronics

    CERN Document Server

    Powell, RA

    1984-01-01

    This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book

  13. Etching in microsystem technology

    CERN Document Server

    Kohler, Michael

    2008-01-01

    Microcomponents and microdevices are increasingly finding application in everyday life. The specific functions of all modern microdevices depend strongly on the selection and combination of the materials used in their construction, i.e., the chemical and physical solid-state properties of these materials, and their treatment. The precise patterning of various materials, which is normally performed by lithographic etching processes, is a prerequisite for the fabrication of microdevices.The microtechnical etching of functional patterns is a multidisciplinary area, the basis for the etching p

  14. Electrical field-induced faceting of etched features using plasma etching of fused silica

    Science.gov (United States)

    Huff, M.; Pedersen, M.

    2017-07-01

    This paper reports a previously unreported anomaly that occurs when attempting to perform deep, highly anisotropic etches into fused silica using an Inductively-Coupled Plasma (ICP) etch process. Specifically, it was observed that the top portion of the etched features exhibited a substantially different angle compared to the vertical sidewalls that would be expected in a typical highly anisotropic etch process. This anomaly has been termed as "faceting." A possible explanation of the mechanism that causes this effect and a method to eradicate it has been developed. Additionally, the method to eliminate the faceting is demonstrated. It is theorized that this faceting is a result of the interaction of the electro-potential electrical fields that surround the patterned nickel layers used as a hard mask and the electrical fields directing the high-energy ions from the plasma to the substrate surface. Based on this theory, an equation for calculating the minimum hard mask thickness required for a desired etch depth into fused silica to avoid faceting was derived. As validation, test samples were fabricated employing hard masks of thicknesses calculated based on the derived equation, and it was found that no faceting was observed on these samples, thereby demonstrating that the solution performed as predicted. Deep highly anisotropic etching of fused silica, as well as other forms of silicon dioxide, including crystalline quartz, using plasma etching, has an important application in the fabrication of several MEMS, NEMS, microelectronic, and photonic devices. Therefore, a method to eliminate faceting is an important development for the accurate control of the dimensions of deep and anisotropic etched features of these devices using ICP etch technology.

  15. Comprehensive track-structure based evaluation of DNA damage by light ions from radiotherapy-relevant energies down to stopping

    Science.gov (United States)

    Friedland, W.; Schmitt, E.; Kundrát, P.; Dingfelder, M.; Baiocco, G.; Barbieri, S.; Ottolenghi, A.

    2017-01-01

    Track structures and resulting DNA damage in human cells have been simulated for hydrogen, helium, carbon, nitrogen, oxygen and neon ions with 0.25–256 MeV/u energy. The needed ion interaction cross sections have been scaled from those of hydrogen; Barkas scaling formula has been refined, extending its applicability down to about 10 keV/u, and validated against established stopping power data. Linear energy transfer (LET) has been scored from energy deposits in a cell nucleus; for very low-energy ions, it has been defined locally within thin slabs. The simulations show that protons and helium ions induce more DNA damage than heavier ions do at the same LET. With increasing LET, less DNA strand breaks are formed per unit dose, but due to their clustering the yields of double-strand breaks (DSB) increase, up to saturation around 300 keV/μm. Also individual DSB tend to cluster; DSB clusters peak around 500 keV/μm, while DSB multiplicities per cluster steadily increase with LET. Remarkably similar to patterns known from cell survival studies, LET-dependencies with pronounced maxima around 100–200 keV/μm occur on nanometre scale for sites that contain one or more DSB, and on micrometre scale for megabasepair-sized DNA fragments. PMID:28345622

  16. Cumulative approaches to track formation under swift heavy ion (SHI) irradiation: Phenomenological correlation with formation energies of Frenkel pairs

    International Nuclear Information System (INIS)

    Crespillo, M.L.; Agulló-López, F.; Zucchiatti, A.

    2017-01-01

    Highlights: • Extensive survey formation energies Frenkel pairs and electronic stopping thresholds. • Correlation: track formation thresholds and the energies for Frenkel pair formation. • Formation energies Frenkel pairs discussed in relation to the cumulative mechanisms. • Amorphous track formation mechanisms: defect accumulation models versus melting. • Advantages cumulative models to deal with new hot topics: nuclear-electronic synergy. - Abstract: An extensive survey for the formation energies of Frenkel pairs, as representative candidates for radiation-induced point defects, is presented and discussed in relation to the cumulative mechanisms (CM) of track formation in dielectric materials under swift heavy ion (SHI) irradiation. These mechanisms rely on the generation and accumulation of point defects during irradiation followed by collapse of the lattice once a threshold defect concentration is reached. The physical basis of those approaches has been discussed by Fecht as a defect-assisted transition to an amorphous phase. Although a first quantitative analysis of the CM model was previously performed for LiNbO 3 crystals, we have, here, adopted a broader phenomenological approach. It explores the correlation between track formation thresholds and the energies for Frenkel pair formation for a broad range of materials. It is concluded that the threshold stopping powers can be roughly scaled with the energies required to generate a critical Frenkel pair concentration in the order of a few percent of the total atomic content. Finally, a comparison with the predictions of the thermal spike model is discussed within the analytical Szenes approximation.

  17. Cumulative approaches to track formation under swift heavy ion (SHI) irradiation: Phenomenological correlation with formation energies of Frenkel pairs

    Energy Technology Data Exchange (ETDEWEB)

    Crespillo, M.L., E-mail: mcrespil@utk.edu [Centro de Microanálisis de Materiales, CMAM-UAM, Cantoblanco, Madrid 28049 (Spain); Department of Materials Science & Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Agulló-López, F., E-mail: fal@uam.es [Centro de Microanálisis de Materiales, CMAM-UAM, Cantoblanco, Madrid 28049 (Spain); Zucchiatti, A. [Centro de Microanálisis de Materiales, CMAM-UAM, Cantoblanco, Madrid 28049 (Spain)

    2017-03-01

    Highlights: • Extensive survey formation energies Frenkel pairs and electronic stopping thresholds. • Correlation: track formation thresholds and the energies for Frenkel pair formation. • Formation energies Frenkel pairs discussed in relation to the cumulative mechanisms. • Amorphous track formation mechanisms: defect accumulation models versus melting. • Advantages cumulative models to deal with new hot topics: nuclear-electronic synergy. - Abstract: An extensive survey for the formation energies of Frenkel pairs, as representative candidates for radiation-induced point defects, is presented and discussed in relation to the cumulative mechanisms (CM) of track formation in dielectric materials under swift heavy ion (SHI) irradiation. These mechanisms rely on the generation and accumulation of point defects during irradiation followed by collapse of the lattice once a threshold defect concentration is reached. The physical basis of those approaches has been discussed by Fecht as a defect-assisted transition to an amorphous phase. Although a first quantitative analysis of the CM model was previously performed for LiNbO{sub 3} crystals, we have, here, adopted a broader phenomenological approach. It explores the correlation between track formation thresholds and the energies for Frenkel pair formation for a broad range of materials. It is concluded that the threshold stopping powers can be roughly scaled with the energies required to generate a critical Frenkel pair concentration in the order of a few percent of the total atomic content. Finally, a comparison with the predictions of the thermal spike model is discussed within the analytical Szenes approximation.

  18. Transport through track etched polymeric blend membrane

    Indian Academy of Sciences (India)

    Unknown

    mers having a common ring structure (bisphenol-A) in their repeating unit. Polysulphone has an additional ring structure and –SO2 group in its repeating unit. The blend of these polymeric materials may form some new bonds. The permeability of polymers depends on the operating conditions such as temperature, pressure ...

  19. Polypropylene track membranes as a promising material for targets with polarized protons

    Science.gov (United States)

    Barashkova, I. I.; Bunyatova, E. I.; Kravets, L. I.

    2014-01-01

    Polypropylene track membranes made by irradiation of polypropylene films with a beam of high-energy heavy ions followed by chemical etching of latent ion tracks are proposed for being used as a polarized target material. To give membranes paramagnetic properties needed for allowing dynamic polarization of nuclei, the nitroxyl radical 2,2,6,6-tetramethylpiperidine-1-oxyl was introduced in the samples by the thermal diffusion technique. Using the electron paramagnetic resonance method, we obtained information on paramagnetic centers in the polymer matrix of the membranes and determined the nitroxyl radical concentration and rotational mobility of the spin probe in them.

  20. A study of V79 cell survival after for proton and carbon ion beams as represented by the parameters of Katz' track structure model

    DEFF Research Database (Denmark)

    Grzanka, Leszek; Waligórski, M. P. R.; Bassler, Niels

    Katz’s theory of cellular track structure (1) is an amorphous analytical model which applies a set of four cellular parameters representing survival of a given cell line after ion irradiation. Usually the values of these parameters are best fitted to a full set of experimentally measured survival...... carbon irradiation. 1. Katz, R., Track structure in radiobiology and in radiation detection. Nuclear Track Detection 2: 1-28 (1978). 2. Furusawa Y. et al. Inactivation of aerobic and hypoxic cells from three different cell lines by accelerated 3He-, 12C- and 20Ne beams. Radiat Res. 2012 Jan; 177...... curves available for a variety of ions. Once fitted, using these parameter values and the analytical formulae of the model calculations, cellular survival curves and RBE may be predicted for that cell line after irradiation by any ion, including mixed ion fields. While it is known that the Katz model...

  1. Selective dry etching of manganite thin films for high sensitive magnetoresistive sensors

    Energy Technology Data Exchange (ETDEWEB)

    Naoe, M. E-mail: naoe@pe.titech.ac.jp; Hamaya, K.; Fujiwara, N.; Taniyama, T.; Kitamoto, Y.; Yamazaki, Y

    2001-10-01

    Remarkable chemical enhancement in etch rate of La-manganite thin film is obtained in CO/NH{sub 3} reactive ion etching. The etch rate of 70 nm/min and the selectivity of 4.7 for LSMO thin films over Ti mask are achieved. The edge morphology of the patterned La-manganite becomes significantly smooth compared with pure Ar ion milling. A possible plasma chemistry is also proposed.

  2. Low surface damage dry etched black silicon

    Science.gov (United States)

    Plakhotnyuk, Maksym M.; Gaudig, Maria; Davidsen, Rasmus Schmidt; Lindhard, Jonas Michael; Hirsch, Jens; Lausch, Dominik; Schmidt, Michael Stenbæk; Stamate, Eugen; Hansen, Ole

    2017-10-01

    Black silicon (bSi) is promising for integration into silicon solar cell fabrication flow due to its excellent light trapping and low reflectance, and a continuously improving passivation. However, intensive ion bombardment during the reactive ion etching used to fabricate bSi induces surface damage that causes significant recombination. Here, we present a process optimization strategy for bSi, where surface damage is reduced and surface passivation is improved while excellent light trapping and low reflectance are maintained. We demonstrate that reduction of the capacitively coupled plasma power, during reactive ion etching at non-cryogenic temperature (-20 °C), preserves the reflectivity below 1% and improves the effective minority carrier lifetime due to reduced ion energy. We investigate the effect of the etching process on the surface morphology, light trapping, reflectance, transmittance, and effective lifetime of bSi. Additional surface passivation using atomic layer deposition of Al2O3 significantly improves the effective lifetime. For n-type wafers, the lifetime reaches 12 ms for polished and 7.5 ms for bSi surfaces. For p-type wafers, the lifetime reaches 800 μs for both polished and bSi surfaces.

  3. Uniform lateral etching of tungsten in deep trenches utilizing reaction-limited NF3 plasma process

    Science.gov (United States)

    Kofuji, Naoyuki; Mori, Masahito; Nishida, Toshiaki

    2017-06-01

    The reaction-limited etching of tungsten (W) with NF3 plasma was performed in an attempt to achieve the uniform lateral etching of W in a deep trench, a capability required by manufacturing processes for three-dimensional NAND flash memory. Reaction-limited etching was found to be possible at high pressures without ion irradiation. An almost constant etching rate that showed no dependence on NF3 pressure was obtained. The effect of varying the wafer temperature was also examined. A higher wafer temperature reduced the threshold pressure for reaction-limited etching and also increased the etching rate in the reaction-limited region. Therefore, the control of the wafer temperature is crucial to controlling the etching amount by this method. We found that the uniform lateral etching of W was possible even in a deep trench where the F radical concentration was low.

  4. Effects of gas-flow structures on radical and etch-product density distributions on wafers in magnetomicrowave plasma etching reactors

    International Nuclear Information System (INIS)

    Ikegawa, Masato; Kobayashi, Jun'ichi; Fukuyama, Ryoji

    2001-01-01

    To achieve high etch rate, uniformity, good selectivity, and etch profile control across large diameter wafers, the distributions of ions, radicals, and etch products in magnetomicrowave high-etch-rate plasma etching reactors must be accurately controlled. In this work the effects of chamber heights, a focus ring around the wafer, and gas supply structures (or gas flow structures) on the radicals and etch products flux distribution onto the wafer were examined using the direct simulation Monte Carlo method and used to determine the optimal reactor geometry. The pressure uniformity on the wafer was less than ±1% when the chamber height was taller than 60 mm. The focus ring around the wafer produced uniform radical and etch-product fluxes but increased the etch-product flux on the wafer. A downward-flow gas-supply structure (type II) produced a more uniform radical distribution than that produced by a radial gas-supply structure (type I). The impact flow of the type II structure removed etch products from the wafer effectively and produced a uniform etch-product distribution even without the focus ring. Thus the downward-flow gas-supply structure (type II) was adopted in the design for the second-generation of a magnetomicrowave plasma etching reactor with a higher etching rate

  5. A Monte-Carlo code for the detailed simulation of electron and light-ion tracks in condensed matter

    International Nuclear Information System (INIS)

    Emfietzoglou, D.; Papamichael, G.; Karava, K.; Androulidakis, I.; Pathak, A.; Phillips, G. W.; Moscovitch, M.; Kostarelos, K.

    2006-01-01

    In an effort to understand the basic mechanism of the action of charged particles in solid radiation dosimeters, we extend our Monte-Carlo code (MC4) to condensed media (liquids/solids) and present new track-structure calculations for electrons and protons. Modeling the energy dissipation process is based on a model dielectric function, which accounts in a semi-empirical and self-consistent way for condensed-phase effects which are computationally intractable. Importantly, these effects mostly influence track-structure characteristics at the nano-meter scale, which is the focus of radiation action models. Since the event-by-event scheme for electron transport is impractical above several kilo-electron volts, a condensed-history random-walk scheme has been implemented to transport the energetic delta rays produced by energetic ions. Based on the above developments, new track-structure calculations are presented for two representative dosimetric materials, namely, liquid water and silicon. Results include radial dose distributions in cylindrical and spherical geometries, as well as, clustering distributions, which, among other things, are important in predicting irreparable damage in biological systems and prompt electric-fields in microelectronics. (authors)

  6. Wafer scale oblique angle plasma etching

    Science.gov (United States)

    Burckel, David Bruce; Jarecki, Jr., Robert L.; Finnegan, Patrick Sean

    2017-05-23

    Wafer scale oblique angle etching of a semiconductor substrate is performed in a conventional plasma etch chamber by using a fixture that supports a multiple number of separate Faraday cages. Each cage is formed to include an angled grid surface and is positioned such that it will be positioned over a separate one of the die locations on the wafer surface when the fixture is placed over the wafer. The presence of the Faraday cages influences the local electric field surrounding each wafer die, re-shaping the local field to be disposed in alignment with the angled grid surface. The re-shaped plasma causes the reactive ions to follow a linear trajectory through the plasma sheath and angled grid surface, ultimately impinging the wafer surface at an angle. The selected geometry of the Faraday cage angled grid surface thus determines the angle at with the reactive ions will impinge the wafer.

  7. Three kinds of high-energy Pb ion tracks on the LiF crystal surface at grazing angles of incidence

    CERN Document Server

    Vorobyova, I V

    2002-01-01

    Tracks induced on a surface of a LiF crystal by Pb ions with energy of 4.46 MeV/u were studied by the method of shadow replica electron microscopy. The irradiation was carried out at angles of 0.5 deg. and 2 deg. relative to the surface plane of the crystal. Lengths and widths of three kinds of tracks were compared: (1) surface tracks which are formed on a pure crystal surface; (2) island tracks which are formed in an island film of gold (with island radius and separation of <=5 nm) deposited on the crystal surface prior to irradiation and (3) island tracks which are formed in the same island film pressed against the crystal surface by the carbon layer. It was established: (1) At angle of irradiation of 0.5 deg. , the surface track formation is initiated at a point where the ion has not yet crossed the crystal surface, but rather moves above the surface plane at a distance of <=1 nm. (2) When the island track is formed in the free island film, the islands completely removed from the track zone. (3) When...

  8. Use of fission track for deciphering the dissolution mechanism of silicates glasses

    International Nuclear Information System (INIS)

    Petit, J.C.; Brousse, C.

    1985-09-01

    Polished sections of silicate glasses containing latent or pre-etched fission tracks have been subjected to corrosion in deionized water or NaCl brines at 20, 50 and 100 0 C. The evolution of glass surface helps deciphering among reported dissolution models. We show that ion-exchange is dominant in simple glasses while in complex ones, dissolution involves several steps including an in-situ transformation of the pristine material and a reprecipitation of dissolved species

  9. Gamma and Ion-Beam Irradiation of DNA: Free Radical Mechanisms, Electron Effects, and Radiation Chemical Track Structure

    Science.gov (United States)

    Sevilla, Michael D.; Becker, David; Kumar, Anil; Adhikary, Amitava

    2016-01-01

    The focus of our laboratory’s investigation is to study the direct-type DNA damage mechanisms resulting from γ-ray and ion-beam radiation-induced free radical processes in DNA which lead to molecular damage important to cellular survival. This work compares the results of low LET (γ−) and high LET (ion-beam) radiation to develop a chemical track structure model for ion-beam radiation damage to DNA. Recent studies on protonation states of cytosine cation radicals in the N1-substituted cytosine derivatives in their ground state and 5-methylcytosine cation radicals in ground as well as in excited state are described. Our results exhibit a radical signature of excitations in 5-methylcytosine cation radical. Moreover, our recent theoretical studies elucidate the role of electron-induced reactions (low energy electrons (LEE), presolvated electrons (epre−), and aqueous (or, solvated) electrons (eaq−)). Finally DFT calculations of the ionization potentials of various sugar radicals show the relative reactivity of these species. PMID:27695205

  10. Recording of heavy ion tracks in silicates. Application to the determination of the abundance of ultra-heavy elements in old solar cosmic radiation

    International Nuclear Information System (INIS)

    Duraud, J.-P.

    1978-12-01

    The aim of this thesis is to determine the abundance A(Z) and energy spectrum of the elements of atomic number Z present in cosmic radiation, by means of fossil traces recorded in moon and meteorite minerals. The difficulties due amongst other things to natural annealing are examined in detail in part one, of this paper, the outcome being a thorough study of the processes responsible for the formation, chemical attack and annealing of heavy ion tracks. Part two describes an original approach used here and consisting of a combined analysis as a function of annealing for a given track, of the microscopic structure of the latent track and its attack rate. Part three uses the new rules established beforehand to propose a new method of studying the UH ion (Z>30) to VH ion (20 [fr

  11. Chlorine-based plasma etching of GaN

    Energy Technology Data Exchange (ETDEWEB)

    Shul, R.J.; Briggs, R.D. [Sandia National Labs., Albuquerque, NM (United States); Pearton, S.J.; Vartuli, C.B.; Abernathy, C.R.; Lee, J.W. [Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering; Constantine, C.; Baratt, C. [Plasma-Therm, Inc., Saint Petersburg, FL (United States)

    1997-02-01

    The wide band gap group-III nitride materials continue to generate interest in the semiconductor community with the fabrication of green, blue, and ultraviolet light emitting diodes (LEDs), blue lasers, and high temperature transistors. Realization of more advanced devices requires pattern transfer processes which are well controlled, smooth, highly anisotropic and have etch rates exceeding 0.5 {micro}m/min. The utilization of high-density chlorine-based plasmas including electron cyclotron resonance (ECR) and inductively coupled plasma (ICP) systems has resulted in improved GaN etch quality over more conventional reactive ion etch (RIE) systems.

  12. Anisotropic etching of tungsten-nitride with ICP system

    CERN Document Server

    Lee, H G; Moon, H S; Kim, S H; Ahn, J; Sohn, S

    1998-01-01

    Inductively Coupled Plasma ion streaming etching of WN sub x film is investigated for preparing x-ray mask absorber patterns. SF sub 6 gas plasma provides for effective etching of WN sub x , and the addition of Ar and N sub 2 results in higher dissociation of SF sub 6 and sidewall passivation effect, respectively. Microloading effect observed for high aspect ratio patterns is minimized by multi-step etching and O sub 2 plasma treatment process. As a result, 0.18 mu m WN sub x line and space patterns with vertical sidewall profile are successfully fabricated.

  13. AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm2 V-1 s-1)

    Science.gov (United States)

    Yamamoto, Akio; Makino, Shinya; Kanatani, Keito; Kuzuhara, Masaaki

    2018-04-01

    In this study, the metal-organic-vapor-phase-epitaxial growth behavior and electrical properties of AlGaN/GaN structures prepared by the growth of an AlGaN layer on a reactive-ion-etched (RIE) GaN surface without regrown GaN layers were investigated. The annealing of RIE-GaN surfaces in NH3 + H2 atmosphere, employed immediately before AlGaN growth, was a key process in obtaining a clean GaN surface for AlGaN growth, that is, in obtaining an electron mobility as high as 1350 cm2 V-1 s-1 in a fabricated AlGaN/RIE-GaN structure. High-electron-mobility transistors (HEMTs) were successfully fabricated with AlGaN/RIE-GaN wafers. With decreasing density of dotlike defects observed on the surfaces of AlGaN/RIE-GaN wafers, both two-dimensional electron gas properties of AlGaN/RIE-GaN structures and DC characteristics of HEMTs were markedly improved. Since dotlike defect density was markedly dependent on RIE lot, rather than on growth lot, surface contaminations of GaN during RIE were believed to be responsible for the formation of dotlike defects and, therefore, for the inferior electrical properties.

  14. Hydrophobization of track membrane surface by ion-plasma sputtering method

    Science.gov (United States)

    Kuklin, I. E.; Khlebnikov, N. A.; Barashev, N. R.; Serkov, K. V.; Polyakov, E. V.; Zdorovets, M. V.; Borgekov, D. B.; Zhidkov, I. S.; Cholakh, S. O.; Kozlovskiy, A. L.

    2017-09-01

    This article reviews the possibility of applying inorganic coatings of metal compounds on PTM by ion-plasma sputtering. The main aim of this research is to increase the contact angle of PTM surfaces and to impart the properties of a hydrophobic material to it. After the modification, the initial contact angle increased from 70° to 120°.

  15. Effects of model approximations for electron, hole, and photon transport in swift heavy ion tracks

    Czech Academy of Sciences Publication Activity Database

    Rymzhanov, R.A.; Medvedev, Nikita; Volkov, A.E.

    2016-01-01

    Roč. 388, Dec (2016), s. 41-52 ISSN 0168-583X R&D Projects: GA MŠk LG15013 Institutional support: RVO:68378271 Keywords : swift heavy ion * electronic stopping * TREKIS * Monte Carlo * electronic kinetics * photon transport Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.109, year: 2016

  16. Dry etching technology for semiconductors

    CERN Document Server

    Nojiri, Kazuo

    2015-01-01

    This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

  17. Development of chemically assisted etching method for GaAs-based optoelectronic devices

    International Nuclear Information System (INIS)

    Gaillard, M.; Rhallabi, A.; Elmonser, L.; Talneau, A.; Pommereau, F.; Pagnod-Rossiaux, Ph.; Bouadma, N.

    2005-01-01

    Chemically assisted ion beam etching of GaAs-based materials using Cl 2 reactive gas was has been experimentally and theoretically examined. The primary effort was the design of an etching system for high reproducibility and improved throughput. Characteristics of the etching process, i.e., etch rate, etch profiles, and surface morphology as a function of etching parameters, i.e., substrate temperature, Cl 2 flow rate, ion current density, and energy are reported. In addition, we have analyzed the etched surfaces qualitatively by Auger electron spectroscopy, and quantitatively by atomic force microscopy. The developed process yielded stoichiometric and smooth GaAs surfaces. Moreover, in order to understand the mechanism of the Cl 2 etching reaction with GaAs, a simulation of the etch profile evolution with time as function of etching parameters was carried out. Simulations were compared with experimentally derived data and were found to be in good agreement. Finally, the developed process was successfully applied to the fabrication of ridge waveguides GaAs/GaAlAs lasers with cw optical characteristics similar to wet chemical etched lasers

  18. Comparison of DMSP cross-track ion drifts and SuperDARN line-of-sight velocities

    Directory of Open Access Journals (Sweden)

    R. A. Drayton

    2005-10-01

    Full Text Available Cross-track ion drifts measured by the DMSP satellites are compared with line-of-sight SuperDARN HF velocities in approximately the same directions. Good overall agreement is found for a data set comprising of 209 satellite passes over the field of view of nine SuperDARN radars in both the Northern and Southern Hemispheres. The slope of the best linear fit line relating the SuperDARN and DMSP velocities is of the order of 0.7 with a tendency for SuperDARN velocities to be smaller. The agreement implies that the satellite and radar data can be merged into a common set provided that spatial and temporal variations of the velocity as measured by both instruments are smooth.

    Keywords. Ionosphere (Ionospheric irregularities; Plasma convection; Auroral ionosphere

  19. Measuring the radial density distribution of light emission around the track of fast ions in nitrogen

    International Nuclear Information System (INIS)

    Ibach, T.

    1983-01-01

    For analysing the emission and stopping of ionization electrons (σ-electrons) emitted by fast ions passing through a gas, the radial density distribution of the light emission of the (0,0) transition of two optical bands in nitrogen have been measured. The systems selected for the epxeriments are the 2nd positive system (2.PS) at 337.1 nm primarily excited by low-energy electrons of about 20 eV, and the first negative system (1.NS) at 391.4 nm excited by faster electrons and simultaneous ionization. The equipment developed for the experiments records the light emission with a telescope-type optical arrangement including interference filters, allowing high local resolution and dynamics of the measured range. The measurements have been carried out at pressures between 0.133 and 13.3 mbar, using photons of energies ranging from 270 keV to 2.8 MeV, helium 3 beams of 270 keV/u and 500 keV/u, and neon beams of 270 keV/u. Abel's inversion applied to the distance functions allows calculation of the spatial light emission density which is normalized for a gas density of 1 g/cm 3 . The profiles of the two bands indicate that the σ-electron spectrum gets harder in outward direction. Next to the beam the impact density decreases faster with increasing ion energy than the stopping power (increasing interaction range of the σ-electrons). With photon beams, about half of the whole light emission in the 1. NS, and of the ionization, is induced by primary interactions of the ion beam. This proportion decreases at constant energy per nucleon with increasing atomic number of the ions as compared with the σ-electrons. The primary σ-emission gets harder with higher atomic numbers. (orig./HP) [de

  20. Femto-clock for the electron kinetics in swift heavy ion tracks

    Czech Academy of Sciences Publication Activity Database

    Medvedev, Nikita; Volkov, A.E.

    2017-01-01

    Roč. 50, č. 44 (2017), s. 1-11, č. článku 445302. ISSN 0022-3727 R&D Projects: GA MŠk LG15013; GA MŠk(CZ) LM2015083 Institutional support: RVO:68378271 Keywords : swift heavy ions * electron kinetics * femto-clock * femtosecond resolution * spectroscopy * radiative decay Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) Impact factor: 2.588, year: 2016

  1. SU-E-T-334: Track Structure Simulations of Charged Particles at Low and Intermediate Energies: Cross Sections Needs for Light and Heavy Ions

    Energy Technology Data Exchange (ETDEWEB)

    Dingfelder, M [East Carolina University, Greenville, NC (United States)

    2014-06-01

    Purpose/Methods: Monte Carlo (MC) track structure simulations follow the primary as well as all produced secondary particles in an event-by-event manner, from starting or ejection energy down to total stopping. They provide useful information on physics and chemistry of the biological response to radiation. They depend on reliable interaction cross sections and transport models of the considered radiation quality with biologically relevant materials. Most transport models focus on sufficiently fast and bare (i.e., fully ionized) ions and cross sections calculated within the (relativistic) first Born or Bethe approximations. These theories consider the projectile as a point particle and rely on proton cross sections and simple charge-scaling methods; they neglect the atomic nature of the ion and break down at low and intermediate ion energies. Heavier ions are used in particle therapy and slow to intermediate and low energies in the biologically interesting Bragg peak. Lighter and slower fragment ions, including alpha particles, protons, and neutrons are also produced in nuclear and break up reactions of charged particles. Secondary neutrons also produce recoil protons and ions, mainly in the intermediate energy range. Results/Conclusion: This work reviews existing models for track structure simulations and cross section calculations for light and heavy ions focusing on the low and intermediate energy range. It also presents new and updated aspects on cross section calculations and simulation techniques for ions and discusses the need for new models, calculations, and experimental data.

  2. The effects of pre-etching time on the characteristic responses of electrochemically etched CR-39 neutron dosimeters

    International Nuclear Information System (INIS)

    Sohrabi, M.; Khoshnoodi, M.

    1986-01-01

    The effects of pre-etching time (PET) or duration of etching of fast-neutron-induced-recoil tracks in CR-39 in 6N KOH at 60 0 C on electrochemical etching neutron characteristic responses; i.e. sensitivity and mean recoil track diameter (MRTD) versus KOH normality up to 18N are investigated in this paper. Six sets of responses for PETs of 0, 1, 2, 3, 4, and 5 hours were obtained by using our new multi-chamber ECE (MCECE) system which reduced total operation time to about 6% of the time usually required when single-chamber ECE systems are used. The sensitivity response for zero PET showed a broad plateau and a high sensitivity low-LET peak around 16N. By increasing PET, another peak was also developed around 5N leading to 'double-humped' responses with two maximums around 5N and 16N, and a minimum around 11N. On the other hand, the MRTD responses for all PETs studied showed the same general trend with maximums around 11N. In this paper, shape of tracks under different conditions are also investigated, new optimum conditions such as KOH concentrations of 5, 11, and 15N at 25 0 C, with or without pre-etching, are recommended for tracks of lower-LET recoils including possibly protons, and alpha particle tracks over a broad energy range, and the efficiency of the MCECE system is also demonstrated. (author)

  3. Formation of dislocations and hardening of LiF under high-dose irradiation with 5-21 MeV {sup 12}C ions

    Energy Technology Data Exchange (ETDEWEB)

    Zabels, R.; Manika, I.; Maniks, J.; Grants, R. [Institute of Solid State Physics, University of Latvia, Riga (Latvia); Schwartz, K. [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Dauletbekova, A.; Baizhumanov, M. [L.N. Gumilyov Eurasian National University, Astana (Kazakhstan); Zdorovets, M. [Institute of Nuclear Physics, Almaty (Kazakhstan)

    2017-05-15

    The emergence of dislocations and hardening of LiF crystals irradiated to high doses with {sup 12}C ions have been investigated using chemical etching, AFM, nanoindentation, and thermal annealing. At fluences ensuring the overlapping of tracks (Φ ≥6 x 10{sup 11} ions/cm{sup 2}), the formation of dislocation-rich structure and ion-induced hardening is observed. High-fluence (10{sup 15} ions/cm{sup 2}) irradiation with {sup 12}C ions causes accumulation of extended defects and induces hardening comparable to that reached by heavy ions despite of large differences in ion mass, energy, energy loss, and track morphology. The depth profiles of hardness indicate on a notable contribution of elastic collision mechanism (nuclear loss) in the damage production and hardening. The effect manifests at the end part of the ion range and becomes significant at high fluences (≥10{sup 14} ions/cm{sup 2}). (orig.)

  4. Comparative analysis of barium titanate thin films dry etching using inductively coupled plasmas by different fluorine-based mixture gas.

    Science.gov (United States)

    Li, Yang; Wang, Cong; Yao, Zhao; Kim, Hong-Ki; Kim, Nam-Young

    2014-01-01

    In this work, the inductively coupled plasma etching technique was applied to etch the barium titanate thin film. A comparative study of etch characteristics of the barium titanate thin film has been investigated in fluorine-based (CF4/O2, C4F8/O2 and SF6/O2) plasmas. The etch rates were measured using focused ion beam in order to ensure the accuracy of measurement. The surface morphology of etched barium titanate thin film was characterized by atomic force microscope. The chemical state of the etched surfaces was investigated by X-ray photoelectron spectroscopy. According to the experimental result, we monitored that a higher barium titanate thin film etch rate was achieved with SF6/O2 due to minimum amount of necessary ion energy and its higher volatility of etching byproducts as compared with CF4/O2 and C4F8/O2. Low-volatile C-F compound etching byproducts from C4F8/O2 were observed on the etched surface and resulted in the reduction of etch rate. As a result, the barium titanate films can be effectively etched by the plasma with the composition of SF6/O2, which has an etch rate of over than 46.7 nm/min at RF power/inductively coupled plasma (ICP) power of 150/1,000 W under gas pressure of 7.5 mTorr with a better surface morphology.

  5. A study of commercially-available polyethylene terephthalate (PET) and polycarbonate as nuclear track detector materials

    Science.gov (United States)

    Espinosa, G.; Golzarri, J. I.; Vazquez-Lopez, C.; Trejo, R.; Lopez, K.; Rickards, J.

    2014-07-01

    In the study of the sensitivity of materials to be used as nuclear track detectors, it was found that commercial polyethylene terephthalate (PET) from Ciel® water bottles, commercial roof cover polycarbonate, and recycled packaging strips (recycled PET), can be used as nuclear track detectors. These three commercial materials present nuclear tracks when bombarded by 2.27 MeV nitrogen ions produced in a Pelletron particle accelerator, and by fission fragments from a 252Cf source (79.4 and 103.8 MeV), after a chemical etching with a 6.25M KOH solution, or with a 6.25M KOH solution with 20% methanol, both solutions at 60±1°C. As an example, the nitrogen ions deposit approximately 1 keV/nm in the form of ionization and excitation at the surface of PET, as calculated using the SRIM code. The fission fragments deposit up to 9 keV/nm at the surface, in both cases generating sufficient free radicals to initiate the track formation process. However, 5 MeV alpha particles, typical of radon (222Rn) emissions, deposit only 0.12 keV/nm, do not present tracks after the chemical etching process. This valuable information could be very useful for further studies of new materials in nuclear track methodology.

  6. Shapes of agglomerates in plasma etching reactors

    International Nuclear Information System (INIS)

    Huang, F.Y.; Kushner, M.J.

    1997-01-01

    Dust particle contamination of wafers in reactive ion etching (RIE) plasma tools is a continuing concern in the microelectronics industry. It is common to find that particles collected on surfaces or downstream of the etch chamber are agglomerates of smaller monodisperse spherical particles. The shapes of the agglomerates vary from compact, high fractal dimension structures to filamentary, low fractal dimension structures. These shapes are important with respect to the transport of particles in RIE tools under the influence electrostatic and ion drag forces, and the possible generation of polarization forces. A molecular dynamics simulation has been developed to investigate the shapes of agglomerates in plasma etching reactors. We find that filamentary, low fractal dimension structures are generally produced by smaller (<100s nm) particles in low powered plasmas where the kinetic energy of primary particles is insufficient to overcome the larger Coulomb repulsion of a compact agglomerate. This is analogous to the diffusive regime in neutral agglomeration. Large particles in high powered plasmas generally produce compact agglomerates of high fractal dimension, analogous to ballistic agglomeration of neutrals. copyright 1997 American Institute of Physics

  7. Super-selective cryogenic etching for sub-10 nm features

    Science.gov (United States)

    Liu, Zuwei; Wu, Ying; Harteneck, Bruce; Olynick, Deirdre

    2013-01-01

    Plasma etching is a powerful technique for transferring high-resolution lithographic masks into functional materials. Significant challenges arise with shrinking feature sizes, such as etching with thin masks. Traditionally this has been addressed with hard masks and consequently additional costly steps. Here we present a pathway to high selectivity soft mask pattern transfer using cryogenic plasma etching towards low-cost high throughput sub-10 nm nanofabrication. Cryogenic SF6/O2 gas chemistry is studied for high fidelity, high selectivity inductively coupled plasma etching of silicon. Selectivity was maximized on large features (400 nm-1.5 μm) with a focus on minimizing photoresist etch rates. An overall anisotropic profile with selectivity around 140:1 with a photoresist mask for feature size 1.5 μm was realized with this clean, low damage process. At the deep nanoscale, selectivity is reduced by an order of magnitude. Despite these limits, high selectivity is achieved for anisotropic high aspect ratio 10 nm scale etching with thin polymeric masks. Gentler ion bombardment resulted in planar-dependent etching and produced faceted sub-100 nm features.

  8. Conductometric determination of single pores in polyethyleneterephthalate irradiated by heavy ions

    International Nuclear Information System (INIS)

    Oganesyan, V.R.; Trofimov, V.V.; Doerschel, B.; Hermsdorf, D.; Vetter, J.; Danziger, M.

    2002-01-01

    Most of the previous works devoted to the problem of track formation processes did not pay enough attention to direct measurement of the appearance of every individual pore in an array of many pores induced by the irradiation of polymer films with ions. Such measurements are not easy to carry out due to the extremely high electric resistance in the moment of pore opening. In this work the analysis of films irradiated with low particle fluences up to 3.7·10 3 ions/cm 2 is described. Polyethyleneterephthalate (PET) Hostaphan with a thickness of 20μm was used. The samples were irradiated with Bi ions of 11.4 MeV/amu energy. Using optimized etching conditions and computer aided data evaluation, we obtained results, which are in good agreement with theoretical predictions and model calculations. The measured increase of conductivity beginning from the breakthrough of a single track up to the next pore opening in dependence on the etching time and the number of opened pores confirm the assumed model. Thus, the developed 'track-by-track' method can be used effectively for description of the sequential appearance of individual pores in an electrolytic etching process

  9. Metal-assisted etch combined with regularizing etch

    Energy Technology Data Exchange (ETDEWEB)

    Yim, Joanne; Miller, Jeff; Jura, Michael; Black, Marcie R.; Forziati, Joanne; Murphy, Brian; Magliozzi, Lauren

    2018-03-06

    In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.

  10. Comparison of different PADC materials and etching conditions for fast neutron dosimetry

    International Nuclear Information System (INIS)

    Assenmacher, F.; Boschung, M.; Hohmann, E.; Mayer, S.

    2016-01-01

    Etched-track polyallyl diglycol carbonate (PADC) dosemeters have been in use at the Paul Scherrer Institute since 1998 in neutron dosimetry for individual monitoring. In the last years, the availability of PADC materials from different manufacturers has grown, and different etching conditions were proposed, with the intention to improve the quality and overall performance of PADC in individual neutron monitoring. The goal of the present study was to compare the performance of different PADC materials and to investigate the influence of different etching conditions on sensitivity to fast neutrons and lower detection limit. The comparison covers six different PADC materials and eight different etching conditions. (authors)

  11. Effect of process parameters on sidewall damage in deep silicon etch

    International Nuclear Information System (INIS)

    Meng, Lingkuan; Yan, Jiang

    2015-01-01

    Sidewall damage caused in deep reactive ion silicon etch was investigated by varying etch cycle time, bias power, etch pressure and SF 6 flow rate using the Bosch process in a uniquely designed, inductively coupled plasma reactor. The effects of these process parameters on the etch profile and sidewall angle were also studied for high density metal–insulator–metal capacitor structure. By choosing the proper etch cycle time of 2 s, it was observed that the sidewall damage was very sensitive to these etch process parameters. As bias power increased, the sidewall damage increased gradually. Especially, at the bias power of 500 W, a dual bowing shape with severe sidewall damage was seen, which might be due to a combination of two mechanisms: the formation of a redeposition region and a secondary ion etch effect. With increasing pressure, the sidewall damage was not always located in a specific depth range but distributed along almost the whole trench sidewall. An etch pressure below 80 mTorr was favorably recommended for reducing the extent of the sidewall damage. In addition, we found that an appropriate SF 6 flow rate was also very beneficial to the realization of a smooth trench sidewall when it was controlled within an appropriate range. Based on these investigations, an acceptable etch condition could be selected to achieve a nearly vertical etch profile as well as a smooth sidewall surface. (paper)

  12. The influence of chemical etching time on efficiency of radon detection using CR-39

    Energy Technology Data Exchange (ETDEWEB)

    Reway, Adriana P.; Kappke, Jaqueline; Narloch, Danielle C., E-mail: adrireway@hotmail.com, E-mail: jaquelinekappke@gmail.com, E-mail: daninarloch@hotmail.com [Universidade Tecnologica Federal do Parana (UTFPR), Curitiba, PR (Brazil). Departamento Academico de Fisica; Del Claro, Flavia; Paschuk, Sergei A., E-mail: flaviadelclaro@gmail.com, E-mail: spaschuk@gmail.com [Universidade Tecnologica Federal do Parana (UTFPR), Curitiba, PR (Brazil). Programa de Pos-Graduaca em Engenharia Eletrica e Informatica Industrial; Correa, Janine N., E-mail: janine_nicolosi@hotmail.com [Universidade Tecnologica Federal do Parana (UTFPR), Curitiba, PR (Brazil). Departamento Academico de Construcao Civil

    2015-07-01

    Natural radiation is the principal source of human exposure to ionizing radiation. Radon is noble radioactive gas that emanates from the soil and rocks entering the atmosphere of dwellings where it could be accumulated. The inhalation of {sup 222}Rn represents a significant health risk. Solid-State Nuclear Track Detectors (SSNTD) represents an efficient method for alpha particle detection and measurements of the activity concentration of {sup 222}Rn. The aim of present work was to study the etching time impact on CR-39 efficiency in radon activity measurements. The investigation was performed using 80 CR-39 detectors, which were exposed to a source of radon. After the exposition, alpha particle tracks development was achieved by chemical etching using 6.25M NaOH solution and ethanol (2%) at 70°C. Etching alpha particle tracks were identified and counted manually using the optical microscope with magnification of 100x and glass overlay mask. The etching time ranged from 7 to 14 hours. The results show that there is an increase in the number of visible tracks with increased etching time. The number of traces obtained for 7 hours and 8 hours of revelation was 1430 +/- 90 and 2090 +/- 160, respectively. However, for etching time of 13 and 14 hours was not observed statistical increase in the number of visible tracks. The number of tracks in this situation was 3630 +/- 180 and 3870 +/- 160 to 13 and 14 hours etching. Thus, for assumed etching parameters, the etching optimal time was observed 14 hours. (author)

  13. The mechanism of selective corrugation removal by KOH anisotropic wet etching

    International Nuclear Information System (INIS)

    Shikida, M; Inagaki, N; Sasaki, H; Amakawa, H; Fukuzawa, K; Sato, K

    2010-01-01

    The mechanism of selective corrugation removal by anisotropic wet etching—which reduces a periodic corrugation, called 'scalloping', formed on the sidewalls of microstructures by the Bosch process in deep reactive-ion etching (D-RIE)—was investigated. In particular, the corrugation-removal mechanism was analyzed by using the etching rate distribution pattern, and two equations for predicting the corrugation-removal time by the etching were derived. A Si{1 0 0} wafer was first etched by D-RIE at a depth of 29.4 µm (60 cycles) to form the corrugation on the sidewall surface. The height and pitch of the corrugation were 196 and 494 nm, respectively. Selective removal of the corrugation by using 50% KOH (40 °C) was experimentally tried. The corrugation formed on Si{1 0 0} sidewall surfaces was gradually reduced in size as the etching progressed, and it was completely removed after 5 min of etching. Similarly, the corrugation formed on a Si{1 1 0} sidewall surface was also selectively removed by KOH etching (etching time: 3 min). The roughness value of the sidewall surface was reduced from 17.6 nm to a few nanometers by the etching. These results confirm that the corrugation-removal mechanism using anisotropic wet etching can be explained in terms of the distribution pattern of etching rate

  14. Dry etching of ITO by magnetic pole enhanced inductively coupled plasma for display and biosensing devices

    Energy Technology Data Exchange (ETDEWEB)

    Meziani, T. [European Commission, Joint Research Centre, Institute for Health and Consumer Protection, 21020 Ispra (Vatican City State, Holy See,) (Italy)]. E-mail: tarik.meziani@jrc.it; Colpo, P. [European Commission, Joint Research Centre, Institute for Health and Consumer Protection, 21020 Ispra (Va) (Italy)]. E-mail: pascal.colpo@jrc.it; Lambertini, V. [Centro Ricerche Fiat, Strada Torino 50, 10043 Orbassano (TO) (Italy); Ceccone, G. [European Commission, Joint Research Centre, Institute for Health and Consumer Protection, 21020 Ispra (Va) (Italy); Rossi, F. [European Commission, Joint Research Centre, Institute for Health and Consumer Protection, 21020 Ispra (Va) (Italy)

    2006-03-15

    The dry etching of indium tin oxide (ITO) layers deposited on glass substrates was investigated in a high density inductively coupled plasma (ICP) source. This innovative low pressure plasma source uses a magnetic core in order to concentrate the electromagnetic energy on the plasma and thus provides for higher plasma density and better uniformity. Different gas mixtures were tested containing mainly hydrogen, argon and methane. In Ar/H{sub 2} mixtures and at constant bias voltage (-100 V), the etch rate shows a linear dependence with input power varying the same way as the ion density, which confirms the hypothesis that the etching process is mainly physical. In CH{sub 4}/H{sub 2} mixtures, the etch rate goes through a maximum for 10% CH{sub 4} indicating a participation of the radicals to the etching process. However, the etch rate remains quite low with this type of gas mixture (around 10 nm/min) because the etching mechanism appears to be competing with a deposition process. With CH{sub 4}/Ar mixtures, a similar feature appeared but the etch rate was much higher, reaching 130 nm/min at 10% of CH{sub 4} in Ar. The increase in etch rate with the addition of a small quantity of methane indicates that the physical etching process is enhanced by a chemical mechanism. The etching process was monitored by optical emission spectroscopy that appeared to be a valuable tool for endpoint detection.

  15. Digital image processing for diameter distribution evaluation of nuclear tracks

    International Nuclear Information System (INIS)

    Lira, J.; Camacho, S.; Balcazar-Garcia, M.; Peralta-Fabi, R.

    1984-01-01

    Fast reliable, and accurate evaluation of diameter distribution of nuclear tracks, etched on solid state nuclear detectors is necessary, to infer general information from the particular ions detected. To achieve this, it is primarily required to develop an on-line method, that is, a method fast enough so as the reading and information extraction processes became simultaneous. In order to accomplish this, adaptive matched filtering has been generalized to two dimensions; this lessens the noise content and the unwanted features present in the detector, and avoids distorting results significantly. (author)

  16. Improvement of surface roughness in silicon-on-insulator wafer fabrication using a neutral beam etching

    Science.gov (United States)

    Min, T. H.; Park, B. J.; Kang, S. K.; Gweon, G. H.; Kim, Y. Y.; Yeom, G. Y.

    2009-08-01

    Silicon-on-insulator (SOI) wafers were etched by an energetic chlorine neutral beam obtained by the low-angle forward reflection of an ion beam, and the surface roughness of the etched wafers was compared with that of the SOI wafers etched by an energetic chlorine ion beam. When the ion beam was used to etch the silicon layer of the SOI wafers, the surface roughness was not significantly changed even though the use of higher ion bombardment energy slightly decreased the surface roughness of the SOI wafer. However, when the chlorine neutral beam was used instead of the chlorine ion beam having a similar beam energy, the surface roughness of the SOI wafer was significantly improved compared with that etched by the chlorine ion beam. By etching about 150 nm silicon from the SOI wafer having a 300 nm-thick top silicon layer with the chlorine neutral beam at the energy of 500 eV, the rms surface roughness of 1.5 Å could be obtained with the etch rate of about 750 Å min-1.

  17. Incident-angle dependency found in track formation sensitivity of a plastic nuclear track detector (TD-1)

    International Nuclear Information System (INIS)

    Yasuda, Hiroshi

    1999-01-01

    The present study was done since data are hardly available on the incident-angle dependency of track formation sensitivity (S) of the plastic nuclear track detector. Chips of a TD-1 plate, an antioxidant-doped CR-39 (diethyleglycol-bis-allylcarbonate, HARZLAS, Fukuvi Chem. Ind.), were used as a high-LET radiation detector and were exposed to heavy ion beams of C, Ne, and Si under different incident angles in Heavy Ion Medical Accelerator in Chiba of National Institute of Radiological Sciences. After exposed and etched, the chips were observed with an optical microscope and a program for image analysis to calculate S. The S values calculated were found smaller for the beams having lower incident angles. Thus the estimated LET values from the S-LET relationship for vertical incident beams showed large reduction for low-angle particles. Those potential errors should be quantified and corrected in determination of LET spectra in space. (K.H.)

  18. Ion-stimulated Gas Desorption Yields of Electropolished, Chemically Etched, and Coated (Au, Ag, Pd, TiZrV) Stainless Steel Vacuum Chambers and St707 Getter Strips Irradiated with 4.2 MeV/u lead ions

    CERN Document Server

    Mahner, E; Küchler, D; Malabaila, M; Taborelli, M

    2005-01-01

    The ion-induced desorption experiment, installed in the CERN Heavy Ion Accelerator LINAC 3, has been used to measure molecular desorption yields for 4.2 MeV/u lead ions impacting under grazing incidence on different accelerator-type vacuum chambers. Desorption yields for H2, CH4, CO, and CO2, which are of fundamental interest for future accelerator applications, are reported for different stainless steel surface treatments. In order to study the effect of the surface oxide layer on the gas desorption, gold-, silver-, palladium-, and getter-coated 316 LN stainless steel chambers and similarly prepared samples were tested for desorption at LINAC 3 and analysed for chemical composition by X-ray Photoemission Spectroscopy (XPS). The large effective desorption yield of 2 x 104 molecules/Pb53+ ion, previously measured for uncoated, vacuum fired stainless steel, was reduced after noble-metal coating by up to 2 orders of magnitude. In addition, pressure rise measurements, the effectiveness of beam scrubbing with le...

  19. Factors Determining the Pore Shape in Polycarbonate Track Membranes

    CERN Document Server

    Apel, P Yu; Orelovich, O L; Akimenko, S N; Sartowska, B; Dmitriev, S N

    2004-01-01

    The process of pore formation in ion-irradiated polycarbonate films on treatment with alkali solutions in the presence of a surfactant is studied. It is found that the pore shape depends on both the structure of the initial films and the peculiarities of the interaction of the surfactant with the polymer surface and the transport of the surfactant into tracks. Due to heterogeneity of the films the cross-section of a track pore channel changes along its length. The presence of the surfactant results in a further effect. Surfactant molecules adsorb on the polymer surface at the pore entries and reduce the etch rate which leads to formation of cigar-like pore channels. The use of surfactant as a component of chemical etchant enables one to control the pore shape in track membranes thus optimizing their retention and permeation characteristics.

  20. Investigation on etch characteristics of nanometer-sized magnetic tunnel junction stacks using a HBr/Ar plasma.

    Science.gov (United States)

    Kim, Eun Ho; Xiao, Yu Bin; Kong, Seon Mi; Chung, Chee Won

    2011-07-01

    The etch characteristics of CoFeB magnetic films and magnetic-tunnel-junction (MTJ) stacks masked with Ti films were investigated using an inductively coupled plasma reactive ion etching in a HBr/Ar gas mix. The etch rate, etch selectivity, and etch profile of the CoFeB films were obtained as a function of the HBr concentration. As the HBr gas was added to Ar, the etch rate of the CoFeB films, and the etch selectivity to the Ti hard mask, gradually decreased, but the etch profile of the CoFeB films was improved. The effects of the HBr concentration and etch parameters on the etch profile of the MTJ stacks with a nanometer-sized 70 x 100 nm2 pattern were explored. At 10% HBr concentration, low ICP RF power, and low DC-bias voltage, better etch profiles of the MTJ stacks were obtained without redeposition. It was confirmed that the protective layer containing hydrogen, and the surface bombardment of the Ar ions, played a key role in obtaining a steep sidewall angle in the etch profile. Fine-pattern transfer of the MTJ stacks with a high degree of anisotropy was achieved using a HBr/Ar gas chemistry.

  1. Diode-like properties of single- and multi-pore asymmetric track membranes

    Science.gov (United States)

    Zielinska, K.; Gapeeva, A. R.; Orelovich, O. L.; Apel, P. Yu.

    2014-05-01

    In this work, we investigated the ionic transport properties of asymmetric polyethylene terephthalate (PET) track membranes with the thickness of 5 μm. The samples containing single pores and arrays of many pores were fabricated by irradiation with accelerated ions and subsequent physicochemical treatment. The method of etching in the presence of a surface-active agent was used to prepare the pores with highly-tapered tip. The transport of monovalent inorganic ions through the nano-scale holes was studied in a conductivity cell. The effective pore radii, electrical conductance and rectification ratios of pores were measured. The geometric characteristics of nanopores were investigated using FESEM.

  2. Predicting synergy in atomic layer etching

    Energy Technology Data Exchange (ETDEWEB)

    Kanarik, Keren J. [Lam Research Corp., Fremont, CA (United States); Tan, Samantha [Lam Research Corp., Fremont, CA (United States); Yang, Wenbing [Lam Research Corp., Fremont, CA (United States); Kim, Taeseung [Lam Research Corp., Fremont, CA (United States); Lill, Thorsten [Lam Research Corp., Fremont, CA (United States); Kabansky, Alexander [Lam Research Corp., Fremont, CA (United States); Hudson, Eric A. [Lam Research Corp., Fremont, CA (United States); Ohba, Tomihito [Lam Research Corp., Fremont, CA (United States); Nojiri, Kazuo [Lam Research Corp., Fremont, CA (United States); Yu, Jengyi [Lam Research Corp., Fremont, CA (United States); Wise, Rich [Lam Research Corp., Fremont, CA (United States); Berry, Ivan L. [Lam Research Corp., Fremont, CA (United States); Pan, Yang [Lam Research Corp., Fremont, CA (United States); Marks, Jeffrey [Lam Research Corp., Fremont, CA (United States); Gottscho, Richard A. [Lam Research Corp., Fremont, CA (United States)

    2017-03-27

    Atomic layer etching (ALE) is a multistep process used today in manufacturing for removing ultrathin layers of material. In this article, the authors report on ALE of Si, Ge, C, W, GaN, and SiO2 using a directional (anisotropic) plasma-enhanced approach. The authors analyze these systems by defining an “ALE synergy” parameter which quantifies the degree to which a process approaches the ideal ALE regime. This parameter is inspired by the ion-neutral synergy concept introduced in the 1979 paper by Coburn and Winters. ALE synergy is related to the energetics of underlying surface interactions and is understood in terms of energy criteria for the energy barriers involved in the reactions. Synergistic behavior is observed for all of the systems studied, with each exhibiting behavior unique to the reactant–material combination. By systematically studying atomic layer etching of a group of materials, the authors show that ALE synergy scales with the surface binding energy of the bulk material. This insight explains why some materials are more or less amenable to the directional ALE approach. Furthermore, they conclude that ALE is both simpler to understand than conventional plasma etch processing and is applicable to metals, semiconductors, and dielectrics.

  3. Quantification and differentiation of nuclear tracks in SSNTD by simulation of their diffraction pattern

    International Nuclear Information System (INIS)

    Palacios, D.; Palacios, F.; Vitoria, T.

    2001-01-01

    An alternative method to count and differentiate nuclear tracks in SSNTD is described. The method is based on the simulation and analysis of Fraunhofer diffraction pattern formed when coherent light passes through tracks of an etched detector. Transformation of the optical system was carried out by a digital procedure of Fourier Transform. Spectral analysis of the radial intensity distribution facilitated to quantify and differentiate tracks for its diameters. The formalism outlined is also applicable to elliptic tracks. Different components of the developed software (TRACKS) are shown. Results obtained by simulation and by the theoretical model gave satisfactory concordance. With the purpose of optimizing the proposed method, technical variants of optic microscopy are discussed. A model that considers the correction for track overlapping was developed and applied. Count error is small when track distribution changes in the field of view. The proposed method can differentiate genuine tracks from defects and anomalies of the detector. Analyzing the influence of illumination conditions and focus of the microscope on track counting and discrimination, the preliminary treatment of images obtained by the CCD camera was established. The proposed method allows, with low cost and operation simplicity, guaranteeing high speed in the obtaining of results, to calculate with good approximation track density in CR-39 detectors and to differentiate the energy of incident ions by track diameters with satisfactory accuracy and precision

  4. Radiation-induced diffusion at ionic etching

    International Nuclear Information System (INIS)

    Protsenko, A.N.; Chajkovskij, Eh.F.

    1986-01-01

    Effect of radiation-induced diffusion (RID) on profiles of cesium implanted into tantalum, tungsten and molybdenum with 100 keV energy was studied. Layer-by-layer analysis was performed by means of 4 keV argon ions and 100 μA/cm 2 beam density. For the case under investigation an integral equation, which solution permitted to determine impurity true distribution, has been derived. It is shown that RID taking place on ionic etching results in broadening and shifting cesium profiles peaks into the deep of a specimen and so perverts results of the layer-by-layer analysis

  5. Etching technology for chromatography microchannels

    NARCIS (Netherlands)

    Tjerkstra, R.W.; de Boer, Meint J.; Berenschot, Johan W.; Gardeniers, Johannes G.E.; van den Berg, Albert; Elwenspoek, Michael Curt

    1997-01-01

    Half-circular channels, to be used for gas chromatography, were etched isotropically using a mixture of HF, HNO3 and H2O. Two wafers with half-circular channels were bonded on top of each other to yield channels with a circular cross-section. During etching the so-called `loading effect' was

  6. Using the Orbit Tracking Code Z3CYCLONE to Predict the Beam Produced by a Cold Cathode PIG Ion Source for Cyclotrons under DC Extraction

    CERN Document Server

    Forringer, Edward

    2005-01-01

    Experimental measurements of the emittance and luminosity of beams produced by a cold-cathode Phillips Ionization Guage (PIG) ion source for cyclotrons under dc extraction are reviewed. (The source being studied is of the same style as ones that will be used in a series of 250 MeV proton cyclotrons being constructed for cancer therapy by ACCEL Inst, Gmbh, of Bergisch Gladbach, Germany.) The concepts of 'plasma boundary' and 'plasma temperature' are presented as a useful set of parameters for describing the initial conditions used in computational orbit tracking. Experimental results for r-pr and z-pz emittance are compared to predictions from the MSU orbit tracking code Z3CYCLONE with results indicating that the code is able to predict the beam produced by these ion sources with adequate accuracy such that construction of actual cyclotrons can proceed with reasonably prudent confidence that the cyclotron will perform as predicted.

  7. Solar Flare Track Exposure Ages in Regolith Particles: A Calibration for Transmission Electron Microscope Measurements

    Science.gov (United States)

    Berger, Eve L.; Keller, Lindsay P.

    2015-01-01

    Mineral grains in lunar and asteroidal regolith samples provide a unique record of their interaction with the space environment. Space weathering effects result from multiple processes including: exposure to the solar wind, which results in ion damage and implantation effects that are preserved in the rims of grains (typically the outermost 100 nm); cosmic ray and solar flare activity, which result in track formation; and impact processes that result in the accumulation of vapor-deposited elements, impact melts and adhering grains on particle surfaces. Determining the rate at which these effects accumulate in the grains during their space exposure is critical to studies of the surface evolution of airless bodies. Solar flare energetic particles (mainly Fe-group nuclei) have a penetration depth of a few millimeters and leave a trail of ionization damage in insulating materials that is readily observable by transmission electron microscope (TEM) imaging. The density of solar flare particle tracks is used to infer the length of time an object was at or near the regolith surface (i.e., its exposure age). Track measurements by TEM methods are routine, yet track production rate calibrations have only been determined using chemical etching techniques [e.g., 1, and references therein]. We used focused ion beam-scanning electron microscope (FIB-SEM) sample preparation techniques combined with TEM imaging to determine the track density/exposure age relations for lunar rock 64455. The 64455 sample was used earlier by [2] to determine a track production rate by chemical etching of tracks in anorthite. Here, we show that combined FIB/TEM techniques provide a more accurate determination of a track production rate and also allow us to extend the calibration to solar flare tracks in olivine.

  8. Nuclear tracks in sinterized gemstones

    International Nuclear Information System (INIS)

    Espinosa, G.; Rodriguez, L.V.; Golzarri, J.I.; Castano, V.M.

    1993-01-01

    The responses of sinterized gemstones to alpha particles attempt analyzed with the objective of finding new materials for SSNTD, and also to understand their interaction with radiation and the formation of tracks. In this work we present the results of the characterization of these materials as SSNTD. The micro structural changes observed by electron microscopy. The preparation, etching solution concentration, etching time and effects of temperature are discussed. (Author)

  9. Etch bias inversion during EUV mask ARC etch

    Science.gov (United States)

    Lajn, Alexander; Rolff, Haiko; Wistrom, Richard

    2017-07-01

    The introduction of EUV lithography to high volume manufacturing is now within reach for 7nm technology node and beyond (1), at least for some steps. The scheduling is in transition from long to mid-term. Thus, all contributors need to focus their efforts on the production requirements. For the photo mask industry, these requirements include the control of defectivity, CD performance and lifetime of their masks. The mask CD performance including CD uniformity, CD targeting, and CD linearity/ resolution, is predominantly determined by the photo resist performance and by the litho and etch processes. State-of-the-art chemically amplified resists exhibit an asymmetric resolution for directly and indirectly written features, which usually results in a similarly asymmetric resolution performance on the mask. This resolution gap may reach as high as multiple tens of nanometers on the mask level in dependence of the chosen processes. Depending on the printing requirements of the wafer process, a reduction or even an increase of this gap may be required. A potential way of tuning via the etch process, is to control the lateral CD contribution during etch. Aside from process tuning knobs like pressure, RF powers and gases, which usually also affect CD linearity and CD uniformity, the simplest knob is the etch time itself. An increased over etch time results in an increased CD contribution in the normal case. , We found that the etch CD contribution of ARC layer etch on EUV photo masks is reduced by longer over etch times. Moreover, this effect can be demonstrated to be present for different etch chambers and photo resists.

  10. An improved technique for fission track dating

    International Nuclear Information System (INIS)

    Zhao Yunlong; Wu Zhaohui; Xia Yuliang

    1996-01-01

    The necessity of improving the fission track dating (FTD) technique both at home and abroad is illustrated. The ways of making such improvement are also proposed. It is suggested to calibrate the constant b value of the uranium standard glass by using the method of fission products activity. The 3 kinds of uranium standard glass which have been calibrated are NBS SRM962a, UB 1 and UB 2 . An established new method σ·Φ ρ d /b, to measure neutron fluence, avoids the influence of the varying neutron spectrum on measuring neutron fluence. The improved etching technique for fission tracks in zircon adopted a two-step method which includes the molten alkali system etching using NaOH + KOH and the mixed acid system etching using HNO 3 + HF; this technique results in adequate track etching, increased track clarity and less interference. In this way the intensity of tracks is authentically reflected. Dividing angular zone in accordance with the angular distribution of spontaneous fission track on the crystal surface of minerals to count the tracks and using the improved etching technique to remove the non-uniform angular distribution of spontaneous fission tracks in zircon, ensure the accuracy of tracks count. The improved FTD techniques were used to finish Laboratory Standardized Calibration. The tests using international FTD age standards samples have proved that above mentioned techniques are reliable and practical in obtaining the accurate FTD data. (8 tabs.; 3 figs.)

  11. Etching technology for chromatography microchannels

    OpenAIRE

    Tjerkstra, R.W.; de Boer, Meint J.; Berenschot, Johan W.; Gardeniers, Johannes G.E.; van den Berg, Albert; Elwenspoek, Michael Curt

    1997-01-01

    Half-circular channels, to be used for gas chromatography, were etched isotropically using a mixture of HF, HNO3 and H2O. Two wafers with half-circular channels were bonded on top of each other to yield channels with a circular cross-section. During etching the so-called `loading effect' was encountered: the etch rate depends on the local structure density. To solve this, extra structures were placed around the channels to create an equal structure density over the wafer and so prevent irregu...

  12. High-resolution nuclear track mapping in detailed cellular histology using CR-39 with the contact microscopy technique

    International Nuclear Information System (INIS)

    Amemiya, K.; Takahashi, H.; Kajimoto, Y.; Nakazawa, M.; Yanagie, H.; Hisa, T.; Eriguchi, M.; Nakagawa, Y.; Majima, T.; Kageji, T.; Sakurai, Y.; Kobayashi, T.; Konishi, T.; Hieda, K.; Yasuda, N.; Ogura, K.

    2005-01-01

    In radiation cancer therapies using energetic charged particles such as proton/heavy-ion therapy and boron neutron capture therapy (BNCT), studies on radiation-induced biological response at cellular level are important because the radiation damage from energetic charged particles is highly localized along their paths and the radiation sensitivity is quite different in each cellular organelle. In such studies the information on the position of charged particle impact in biological cells is necessary. A novel method for high-resolution nuclear track mapping in detailed cellular histology has been developed. In this technique, biological specimens mounted on CR-39 plates are exposed to energetic charged particles. The irradiated samples are exposed to UV, and then etched for a short time. Both etch pits of nuclear tracks and relief for transmission UV image of the specimen can be observed on the CR-39 surface with an atomic force microscope (AFM) at about 100 nm resolution

  13. Postoperative sensitivity of self etch versus total etch adhesive.

    Science.gov (United States)

    Yousaf, Ajmal; Aman, Nadia; Manzoor, Manzoor Ahmed; Shah, Jawad Ali; Dilrasheed

    2014-06-01

    To compare postoperative sensitivity following composite restoration placed in supra gingival class-V cavities using self etch adhesive and total etch adhesive. A randomized clinical trial. Operative Dentistry Department of Armed Forces Institute of Dentistry, Rawalpindi, from July to December 2009. A total of 70 patients having class-V supra gingival carious lesions were divided into two groups. Classes-V cavities not exceeding 3 mm were prepared. One treatment group was treated with self etch adhesive (adhe SE one Ivoclar) and the control group was treated with total-etch adhesive (Eco-Etch Ivoclar) after acid etching with 37% phosphoric acid. Light cured composite (Te-Econom Ivoclar) restoration was placed for both groups and evaluated for postoperative sensitivity immediately after restoration, after 24 hours and after one week. Data was recorded on visual analogue scale. Comparison of sensitivity between the two treatment groups on application cold stimulus after 24 hours of restoration showed significant difference; however, no statistically significant difference was observed at baseline, immediately after restoration and at 1 week follow-up with cold stimulus or compressed air application. Less postoperative sensitivity was observed at postoperative 24 hours assessment in restoration placed using SE adhesives compared to TE adhesives. Thus, the use of SE adhesives may be helpful in reducing postoperative sensitivity during 24 hours after restoration placement.

  14. Investigation of plasma etch induced damage in compound semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Shul, R.J.; Lovejoy, M.L.; Hetherington, D.L.; Rieger, D.J.; Vawter, G.A.; Klem, J.F. [Sandia National Labs., Albuquerque, NM (United States); Melloch, M.R. [Purdue Univ., Lafayette, IN (United States). School of Electrical Engineering

    1993-11-01

    We have investigated the electrical performance of mesa-isolated GaAs pn-junction diodes to determine the plasma-induced damage effects from reactive ion and reactive ion beam etching. A variety of plasma chemistries (SiCl{sub 4}, BCl{sub 3}, BCl{sub 3}/Cl{sub 2}, and Cl{sub 2}) and ion energies ranging from 100 to 400 eV were studied. We have observed that many of the RIE BCl{sub 3}/Cl{sub 2} plasmas and RIBE Cl{sub 2} plasmas yield diodes with low reverse-bias currents that are comparable to the electrical characteristics of wet-chemical-etched devices. The reverse-bias leakage currents are independent of surface morphology and sidewall profiles.

  15. Profile etching for prefiguring X-ray mirrors.

    Science.gov (United States)

    Liu, Chian; Qian, Jun; Assoufid, Lahsen

    2015-03-01

    A method to pre-shape mirror substrates through etching with a broad-beam ion source and a contoured mask is presented. A 100 mm-long elliptical cylinder substrate was obtained from a super-polished flat Si substrate with a 48 nm root-mean-square (r.m.s.) figure error and a 1.5 Å r.m.s. roughness after one profile-etching process at a beam voltage of 600 V without iteration. A follow-up profile coating can be used to achieve a final mirror. Profile etching and profile coating combined provide an economic way to make X-ray optics, such as nested Kirkpatrick-Baez mirrors.

  16. High-Density Plasma-Induced Etch Damage of GaN

    International Nuclear Information System (INIS)

    Baca, A.G.; Han, J.; Lester, L.F.; Pearton, S.J.; Ren, F.; Shul, R.J.; Willison, C.G.; Zhang, L.; Zolper, J.C.

    1999-01-01

    Anisotropic, smooth etching of the group-III nitrides has been reported at relatively high rates in high-density plasma etch systems. However, such etch results are often obtained under high de-bias and/or high plasma flux conditions where plasma induced damage can be significant. Despite the fact that the group-III nitrides have higher bonding energies than more conventional III-V compounds, plasma-induced etch damage is still a concern. Attempts to minimize such damage by reducing the ion energy or increasing the chemical activity in the plasma often result in a loss of etch rate or anisotropy which significantly limits critical dimensions and reduces the utility of the process for device applications requiring vertical etch profiles. It is therefore necessary to develop plasma etch processes which couple anisotropy for critical dimension and sidewall profile control and high etch rates with low-damage for optimum device performance. In this study we report changes in sheet resistance and contact resistance for n- and p-type GaN samples exposed to an Ar inductively coupled plasma (ICP). In general, plasma-induced damage was more sensitive to ion bombardment energies as compared to plasma flux. In addition, p-GaN was typically more sensitive to plasma-induced damage as compared to n-GaN

  17. Study of surfactant-added TMAH for applications in DRIE and wet etching-based micromachining

    Science.gov (United States)

    Tang, B.; Shikida, M.; Sato, K.; Pal, P.; Amakawa, H.; Hida, H.; Fukuzawa, K.

    2010-06-01

    In this paper, etching anisotropy is evaluated for a number of different crystallographic orientations of silicon in a 0.1 vol% Triton-X-100 added 25 wt% tetramethylammonium hydroxide (TMAH) solution using a silicon hemisphere. The research is primarily aimed at developing advanced applications of wet etching in microelectromechanical systems (MEMS). The etching process is carried out at different temperatures in the range of 61-81 °C. The etching results of silicon hemisphere and different shapes of three-dimensional structures in {1 0 0}- and {1 1 0}-Si surfaces are analyzed. Significantly important anisotropy, different from a traditional etchant (e.g. pure KOH and TMAH), is investigated to extend the applications of the wet etching process in silicon bulk micromachining. The similar etching behavior of exact and vicinal {1 1 0} and {1 1 1} planes in TMAH + Triton is utilized selectively to remove the scalloping from deep reactive-ion etching (DRIE) etched profiles. The direct application of the present research is demonstrated by fabricating a cylindrical lens with highly smooth etched surface finish. The smoothness of a micro-lens at different locations is measured qualitatively by a scanning electron microscope and quantitatively by an atomic force microscope. The present paper provides a simple and effective fabrication method of the silicon micro-lens for optical MEMS applications.

  18. Deep SiO2 etching with Al and AlN masks for MEMS devices

    Science.gov (United States)

    Bliznetsov, Vladimir; Mao Lin, Hua; Zhang, Yue Jia; Johnson, David

    2015-08-01

    Silicon oxide-based materials such as quartz and silica are widely used in microelectromechanical systems (MEMS). One way to enhance the capability of their deep plasma etching is to increase selectivity by the use of hard masks. Although this approach was studied previously, information on the use of hard masks for the etching of silicon-oxide based materials on 200 mm substrates is scarce. We present the results of etching process development for amorphous silicon oxide using Al and AlN masks with a view of the application of the results for the etching of silica and quartz. Three gas chemistries (C4F8/O2, CF4 and SF6) and their mixtures were compared in an industrial reactive ion etch (RIE) chamber with two plasma sources. It was established that pure SF6 is the best etchant and AlN is a better mask than Al for providing higher selectivity and a sidewall angle close to vertical. A range of etching parameters for micromasking-free etching was established and etched structures of up to a 4 : 1 aspect ratio were created in 21 μm-thick oxide using the process with an etch rate of 0.32-0.36 μm min-1 and a selectivity to AlN mask of (38-49) : 1.

  19. Plasma etching of benzocyclobutene in CF4/O2 and SF6/O2 plasmas

    International Nuclear Information System (INIS)

    Kim, G.S.; Steinbruechel, C.

    2006-01-01

    Results for the reactive ion etching and patterning of benzocyclobutene (BCB) in CF 4 /O 2 and SF 6 /O 2 plasmas in a parallel-plate reactor with Langmuir probe and optical emission diagnostics are reported. The behavior of the O atom concentration [O] is similar in both plasmas, showing a strong maximum at a concentration of about 70% O 2 . The F atom concentration [F] has a maximum at 30% O 2 in CF 4 /O 2 , but the etch rate has a maximum at 70% O 2 . In SF 6 /O 2 , by contrast, [F] and the etch rate increase continuously as the SF 6 content is increased, and the highest etch rate is obtained with pure SF 6 . Also, BCB etched in pure SF 6 gives a very smooth surface. Patterning is performed using two different masks: a conventional hard mask with Si oxide as the top layer and a different type of mask with BCB itself as the top layer. The anisotropy of the etching is evaluated in terms of the plasma conditions and type of masking. The aspect ratio dependence of the etch rate is investigated up to an aspect ratio of 2.5. The results are discussed in terms of possible etch mechanisms and their differences between SF 6 /O 2 and C 4 /O 2 plasmas. A simple model is used to show how the latter mask reduces the dependence of the etch rate on the aspect ratio

  20. Bulk etch rate of LR-115 cellulose nitrate film

    International Nuclear Information System (INIS)

    Harris, M.J.; Schlenker, R.A.

    1977-01-01

    Bulk etch rate (V/sub b/) of Kodak LR-115 cellulose nitrate film has been studied, and values for the parameter are presented. An interesting variability of V/sub b/ has been found which has implications for microdosimetry using this type of integrating nuclear track detector. Short-term and longer-term thickness changes have been observed which may increase the uncertainty in estimations of dose using this type of detector

  1. Dry Ice Etches Terrain

    Science.gov (United States)

    2007-01-01

    [figure removed for brevity, see original site] Figure 1 Every year seasonal carbon dioxide ice, known to us as 'dry ice,' covers the poles of Mars. In the south polar region this ice is translucent, allowing sunlight to pass through and warm the surface below. The ice then sublimes (evaporates) from the bottom of the ice layer, and carves channels in the surface. The channels take on many forms. In the subimage shown here (figure 1) the gas from the dry ice has etched wide shallow channels. This region is relatively flat, which may be the reason these channels have a different morphology than the 'spiders' seen in more hummocky terrain. Observation Geometry Image PSP_003364_0945 was taken by the High Resolution Imaging Science Experiment (HiRISE) camera onboard the Mars Reconnaissance Orbiter spacecraft on 15-Apr-2007. The complete image is centered at -85.4 degrees latitude, 104.0 degrees East longitude. The range to the target site was 251.5 km (157.2 miles). At this distance the image scale is 25.2 cm/pixel (with 1 x 1 binning) so objects 75 cm across are resolved. The image shown here has been map-projected to 25 cm/pixel . The image was taken at a local Mars time of 06:57 PM and the scene is illuminated from the west with a solar incidence angle of 75 degrees, thus the sun was about 15 degrees above the horizon. At a solar longitude of 219.6 degrees, the season on Mars is Northern Autumn.

  2. Study of the reduction in detection limits of track detectors used for {sup 10}B(n,α){sup 7}Li reaction rate measure through annealing and chemical etching experiments; Estudo da reducao nos limites de deteccao de detectores de tracos utilizados na medida de taxa de reacao {sup 10}B(n, α){sup 7}Li atraves de experimentos de annealing e ataque quimico

    Energy Technology Data Exchange (ETDEWEB)

    Vasconcellos, Herminiane L.; Smilgys, Barbara; Guedes, Sandro, E-mail: hluizav@ifi.unicamp.br [Universidade Estadual de Campinas (UNICAMP), SP (Brazil). Instituto de Fisica Gleb Wataghin; Castro, Vinicius A. [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Centro de Engenharia Nuclear

    2013-08-15

    The Boron Neutron Capture Therapy (BNCT) is an experimental radiotherapy for cancer treatment. It is based on {sup 10}B(n, α){sup 7}Li reaction, which can be measured by track detectors capable of recording events that strike them. With this recording, it is possible to determine the number of alpha particles and recoiling Lithium-7 nucleus, reaction products, and from this information, which amount of radiation dose a patient is exposed to. In this work, PADC detectors were characterized, irradiated at the IEA-R1 IPEN/CNEN reactor to assess the contribution of the{sup 10}B(n, α){sup 7}Li reaction and protons from fast neutron scattering with the elements that compounds the tissue. With the aim of reducing the proton background, the detectors were subjected to heating experiments at 80°C for periods in the range 0-100 hours. This was done in order to restore partially modified structure of the detector, causing a reduction in the size and density of tracks. This effect is known as annealing. For the visualization of tracks at microscope, detectors were made three chemical attacks with sodium hydroxide (NaOH) for 30, 60 and 90 minutes at 70°C. It was observed a reduction in the track density achieving a plateau heating time of 50 hours. For detectors that have not undergone annealing and were etched with another etchant, PEW solution, a reduction of 87% in track density was obtained. (author)

  3. Theory of RBE. Third triennial report, 1 January 1967--31 December 1975. [Model based on tracks of heavy ions in nuclear emulsions

    Energy Technology Data Exchange (ETDEWEB)

    Katz, R.

    1975-09-01

    From a single set of themes, the theory of RBE has developed a picture of the response of many biological, physical, and chemical systems to radiations of different quality, that depends on a model of the structure of the tracks of nuclear projectiles in condensed matter. Its characterizations arise from the tracks of heavy ions in nuclear emulsions, as extended to accommodate biological cells. Most recently emulsions have been identified whose radiosensitivity changes with radiation quality parallel those of biological cells. From experimentally determined radiosensitivity parameters, the theory predicts response to a range of radiations, and includes synergistic effects of mixed radiation fields, making it possible to calculate the RBE of a mixed field of neutrons and gamma-rays, and to specify the dosimetric measurements required to make these predictions. (auth)

  4. Fabrication of ultra-high aspect ratio (>160:1) silicon nanostructures by using Au metal assisted chemical etching

    Science.gov (United States)

    Li, Hailiang; Ye, Tianchun; Shi, Lina; Xie, Changqing

    2017-12-01

    We present a facile and effective approach for fabricating high aspect ratio, dense and vertical silicon nanopillar arrays, using a combination of metal etching following electron-beam lithography and Au metal assisted chemical etching (MacEtch). Ti/Au nanostructures used as catalysts in MacEtch are formed by single layer resist-based electron-beam exposure followed by ion beam etching. The effects of MacEtch process parameters, including half period, etching time, the concentrations of H2O2 and HF, etching temperature and drying method are systematically investigated. Especially, we demonstrate an enhancement of etching quality by employing cold MacEtch process, and an enhancement in preventing the collapse of high aspect ratio nanostructures by employing low surface tension rinse liquid and natural evaporation in the drying stage. Using an optimized MacEtch process, vertical silicon nanopillar arrays with a period of 250 nm and aspect ratio up to 160:1 are realized. Our results should be instructive for exploring the achievable aspect ratio limit in silicon nanostructures and may find potential applications in photovoltaic devices, thermoelectric devices and x-ray diffractive optics.

  5. Effect of thermocycling on the durability of etch-and-rinse and self-etch adhesives on dentin.

    Science.gov (United States)

    Sangwichit, Ketkamon; Kingkaew, Ruksaphon; Pongprueksa, Pong; Senawongse, Pisol

    2016-01-01

    The objective was to compare bond strengths of adhesives with/without thermocycling and to analyze the micromorphology of resindentin interfaces. Flat dentin surfaces were prepared and divided into eight groups to bond with four etch-and-rinse adhesives (Optibond FL, Adper Scotchbond Multi-Purpose, Optibond Solo Plus, and Single Bond 2) and four self-etch adhesives (Clearfil SE Bond, Adper SE Plus, Clearfil S(3) Bond and Adper Easy Bond). Specimens were further divided into two subgroups subjected for with/without thermocycling and then subjected to both micro-tensile test and resin-dentin interface evaluation. The results revealed that there were significant differences in bond strength between the groups with and without thermocycling for all etch-and-rinse groups and for the Adper Easy Bond self-etch group (p<0.01). Clearfil SE Bond demonstrated highly durable bond strengths. Furthermore, more silver ion uptake was observed at the resin-dentin interfaces for all etch-and-rinse adhesives and Adper SE Plus and Adper Easy Bond after thermocycling.

  6. Dosimetry and microdosimetry using Let spectrometer based on the track-etch detector: radiotherapy Bremsstrahlung beam, onboard aircraft radiation field; Dosimetrie et micro-dosimetrie au moyen d'un spectrometre a transfert lineique d'energie base sur des detecteurs solides de traces: mesure dans un faisceau de rayonnement X de radiotherapie et du champ de rayonnement a bord d'avion

    Energy Technology Data Exchange (ETDEWEB)

    Jadrneckova, I.; Spurny, F. [Nuclear Physics Institute AS CR, Dept. of Radiation Dosimetry, Prague (Czech Republic); Jadrneckova, I. [Czech Technical Univ., Dept. of Dosimetry and Application of Ionizing Radiation, Prague (Czech Republic)

    2006-10-15

    The spectrometer of linear energy transfer (LET) based on the chemically etched poly-allyl-diglycol-carbonate (PADC) track-etch detector was developed several years ago in our institute. LET spectra are estimated through track parameters determination carried out by an automatic optical image analyzer LUCIA G. This LET spectrometer enables determining LET of particles approximately from 10 to 700 keV/{mu}m. From the LET spectra, dose characteristics can be calculated. This contribution presents the use of this spectrometer in some applications - studies in 18 MV radiotherapy Bremsstrahlung beam and investigation onboard a commercial aircraft during more than 6 months long exposure. The LET spectra obtained in both experiments represent mainly the contribution of secondary or tertiary particles created through the nuclear reactions of photons (Bremsstrahlung beam) or neutrons and neutron-like reacting particles (onboard aircraft) in the detector itself or in the surroundings material. The dose due to the photo-particles represents about 3 x 10{sup -4} of the photon dose; for the dose equivalent this value is about 2 x 10{sup -3} Sv/Gy. Regarding the onboard aircraft exposure, the results obtained using LET spectrometer were compared with those achieved with other methods and a reasonable agreement were stated. (authors)

  7. A plasmaless, photochemical etch process for porous organosilicate glass films

    Science.gov (United States)

    Ryan, E. Todd; Molis, Steven E.

    2017-12-01

    A plasmaless, photochemical etch process using ultraviolet (UV) light in the presence of NH3 or O2 etched porous organosilicate glass films, also called pSiCOH films, in a two-step process. First, a UV/NH3 or UV/O2 treatment removed carbon (mostly methyl groups bonded to silicon) from a pSiCOH film by demethylation to a depth determined by the treatment exposure time. Second, aqueous HF was used to selectively remove the demethylated layer of the pSiCOH film leaving the methylated layer below. UV in the presence of inert gas or H2 did not demethylate the pSiCOH film. The depth of UV/NH3 demethylation followed diffusion limited kinetics and possible mechanisms of demethylation are presented. Unlike reactive plasma processes, which contain ions that can damage surrounding structures during nanofabrication, the photochemical etch contains no damaging ions. Feasibility of the photochemical etching was shown by comparing it to a plasma-based process to remove the pSiCOH dielectric from between Cu interconnect lines, which is a critical step during air gap fabrication. The findings also expand our understanding of UV photon interactions in pSiCOH films that may contribute to plasma-induced damage to pSiCOH films.

  8. Monte-Carlo Simulation of Heavy Ion Track Structure Calculation of Local Dose and 3D Time Evolution of Radiolytic Species

    Science.gov (United States)

    Plante, Ianik; Cucinotta, Francis A.

    2010-01-01

    Heavy ions have gained considerable importance in radiotherapy due to their advantageous dose distribution profile and high Relative Biological Effectiveness (RBE). Heavy ions are difficult to produce on Earth, but they are present in space and it is impossible at this moment to completely shield astronauts from them. The risk of these radiations is poorly understood, which is a concern for a 3-years Mars mission. The effects of radiation are mainly due to DNA damage such as DNA double-strand breaks (DSBs), although non-targeted effects are also very important. DNA can be damaged by the direct interaction of radiation and by reactions with chemical species produced by the radiolysis of water. The energy deposition is of crucial importance to understand biological effects of radiation. Therefore, much effort has been done recently to improve models of radiation tracks.

  9. Three-dimensionally controlled size-reduction of silicon nanopillars by photoelectrochemical etching

    Science.gov (United States)

    Juhasz, Robert; Linnros, Jan

    2001-05-01

    Silicon nanopillars, fabricated by electron beam lithography and reactive ion etching, were size-reduced using laser-assisted electrochemical etching in a dilute hydrofluoric acid solution. The progressing size reduction was followed by scanning electron microscopy down to final diameters of ˜15 nm. By varying the voltage bias, it was found that etching could be directed primarily at the pillar top (7 V) or at the pillar base (-0.6 V) whereas in an intermediate regime, conformal etching could be obtained. From the rate of volume change during etching, it was concluded that holes, participating in the dissolution reaction, were primarily generated within the pillar volume. The corresponding effective dissolution valence was ˜5-9, indicating substantial recombination losses within the pillar.

  10. Toward reliable morphology assessment of thermosets via physical etching: Vinyl ester resin as an example

    Directory of Open Access Journals (Sweden)

    J. Karger-Kocsis

    2013-05-01

    Full Text Available The morphology of peroxide-cured, styrene crosslinked, bisphenol A-based vinyl ester (VE resin was investigated by atomic force microscopy (AFM after ‘physical’ etching with different methods. Etching was achieved by laser ablation, atmospheric plasma treatment and argon ion bombardment. Parameters of the etching were varied to get AFM scans of high topography resolution. VE exhibited a nanoscaled nodular structure the formation of which was ascribed to complex intra- and intermolecular reactions during crosslinking. The microstructure resolved after all the above physical etching techniques was similar provided that optimized etching and suitable AFM scanning conditions were selected. Nevertheless, with respect to the ‘morphology visualization’ these methods follow the power ranking: argon bombardment > plasma treatment > laser ablation.

  11. Determination of absorbed dose to water in a clinical carbon ion beam by means of fluorescent nuclear track detectors, ionization chambers, and water calorimetry

    Energy Technology Data Exchange (ETDEWEB)

    Osinga-Blaettermann, Julia-Maria

    2016-12-20

    Until now, dosimetry of carbon ions with ionization chambers has not reached the same level of accuracy as of high-energy photons. This is mainly caused by the threefold higher uncertainty of the k{sub Q,Q{sub 0}}-factor of ionization chambers, which is derived by calculations due to a lack of experimental data. The current thesis comprises two major aims with respect to the dosimetry of carbon ion beams: first, the investigation of the potential of fluorescent nuclear track detectors for fluence-based dosimetry and second, the experimental determination of the k{sub Q,Q{sub 0}}-factor. The direct comparison of fluence- and ionization-based measurements has shown a significant discrepancy of 4.5 %, which re-opened the discussion on the accuracy of calculated k{sub Q,Q{sub 0}}-factors. Therefore, absorbed dose to water measurements by means of water calorimetry have been performed allowing for the direct calibration of ionization chambers and thus for the experimental determination of k{sub Q,Q{sub 0}}. For the first time it could be shown that the experimental determination of k{sub Q,Q{sub 0}} for carbon ion beams is achievable with a standard measurement uncertainty of 0.8 %. This corresponds to a threefold reduction of the uncertainty compared to calculated values and therefore enables to significantly decrease the overall uncertainty related to ionization-based dosimetry of clinical carbon ion beams.

  12. Chemical etching studies of a Brazilian polycarbonate to fast neutron detection

    Energy Technology Data Exchange (ETDEWEB)

    Souto, E.B.; Campos, L.L. [Instituto de Pesquisas Energeticas e Nucleares, IPEN- CNEN/SP Radiation Metrology Center (CMR) Av. Prof. Lineu Prestes, 2242 CEP: 05508-000 Sao Paulo - SP (Brazil)]. e-mail: ebsouto@ipen.br

    2006-07-01

    The Dosimetric Materials Laboratory (LMD) of the Radiation Metrology Center (CMR) is developing a personal dosimeter for fast neutrons using the technique of solid state nuclear track detectors (SSNTD). This technique is based on the recorded damage (tracks) in dielectric materials due to the impact of charged particles. The tracks are revealed and amplified for visualization in optic microscope through a technique known as chemical etching. The LMD is investigating a Brazilian commercial polycarbonate as a new passive fast neutron's detector in substitution to the traditional materials, as the cellulose nitrate LR-115 and the polycarbonates Makrofol and CR-39. The variation of the etching parameters (chemical solution, time and temperature) alters the response of the material; the best revelation conditions provide the best relationship among the amount of revealed tracks, their clearness and the time spent for this. The polycarbonate studied is a resin of same chemical monomer of Makrofol (C,6H,403). Samples of 3 x 1 cm{sup 2} of the polycarbonate were irradiated with 5 mSv of fast neutrons ({sup 241}Am-Be) and revealed with the chemical solution PEW-40 (15% KOH, 45% H{sub 2}O, 40% C{sub 2}H{sub 5}OH), commonly used for Makrofol. The studied etching parameters were time and temperature. Groups of four samples were revealed at temperatures of 50, 65, 75, 90 and 100 C with etching times varying from one to six hours. The used track's counting procedure was that referred in the literature. The best response to fast neutrons was obtained at 75 C; in spite of their similar answers, smaller temperatures join larger uncertainties in the track's counting and poorer clearness. At this temperature, the number of revealed tracks increases with the etching time approximately until a plateau at three hours. For etching times higher than four hours the polycarbonate presents overlap of tracks. If the temperature is adjusted to 75 C, the etching time should be in

  13. Consequences of atomic layer etching on wafer scale uniformity in inductively coupled plasmas

    Science.gov (United States)

    Huard, Chad M.; Lanham, Steven J.; Kushner, Mark J.

    2018-04-01

    Atomic layer etching (ALE) typically divides the etching process into two self-limited reactions. One reaction passivates a single layer of material while the second preferentially removes the passivated layer. As such, under ideal conditions the wafer scale uniformity of ALE should be independent of the uniformity of the reactant fluxes onto the wafers, provided all surface reactions are saturated. The passivation and etch steps should individually asymptotically saturate after a characteristic fluence of reactants has been delivered to each site. In this paper, results from a computational investigation are discussed regarding the uniformity of ALE of Si in Cl2 containing inductively coupled plasmas when the reactant fluxes are both non-uniform and non-ideal. In the parameter space investigated for inductively coupled plasmas, the local etch rate for continuous processing was proportional to the ion flux. When operated with saturated conditions (that is, both ALE steps are allowed to self-terminate), the ALE process is less sensitive to non-uniformities in the incoming ion flux than continuous etching. Operating ALE in a sub-saturation regime resulted in less uniform etching. It was also found that ALE processing with saturated steps requires a larger total ion fluence than continuous etching to achieve the same etch depth. This condition may result in increased resist erosion and/or damage to stopping layers using ALE. While these results demonstrate that ALE provides increased etch depth uniformity, they do not show an improved critical dimension uniformity in all cases. These possible limitations to ALE processing, as well as increased processing time, will be part of the process optimization that includes the benefits of atomic resolution and improved uniformity.

  14. Guided transmission of 3 keV Ne sup 7 sup + ions through nanocapillaries in PET polymers. Dependence on the capillary diameter

    CERN Document Server

    Stolterfoht, N; Pesic, Z D; Hoffmann, V; Petrov, S; Fink, D; Sulik, B

    2003-01-01

    The outstanding progress in nanotechnology is accompanied by a continuous miniaturization of interfaces used in microelectronics and related fields. Particular attention has been paid to linear structures of mesoscopic dimensions, such as pores or capillaries. Experiments were started in which PET (Mylar) polymer foils of 10 lm thickness were irradiated by 400 MeV xenon. Capillaries with a diameter of a few hundreds nm in foil were obtained etching ion tracks using NaOH. (R.P.)

  15. Effects of hard mask etch on final topography of advanced phase shift masks

    Science.gov (United States)

    Hortenbach, Olga; Rolff, Haiko; Lajn, Alexander; Baessler, Martin

    2017-07-01

    Continuous shrinking of the semiconductor device dimensions demands steady improvements of the lithographic resolution on wafer level. These requirements challenge the photomask industry to further improve the mask quality in all relevant printing characteristics. In this paper topography of the Phase Shift Masks (PSM) was investigated. Effects of hard mask etch on phase shift uniformity and mask absorber profile were studied. Design of experiments method (DoE) was used for the process optimization, whereas gas composition, bias power of the hard mask main etch and bias power of the over-etch were varied. In addition, influence of the over-etch time was examined at the end of the experiment. Absorber depth uniformity, sidewall angle (SWA), reactive ion etch lag (RIE lag) and through pitch (TP) dependence were analyzed. Measurements were performed by means of Atomic-force microscopy (AFM) using critical dimension (CD) mode with a boot-shaped tip. Scanning electron microscope (SEM) cross-section images were prepared to verify the profile quality. Finally CD analysis was performed to confirm the optimal etch conditions. Significant dependence of the absorber SWA on hard mask (HM) etch conditions was observed revealing an improvement potential for the mask absorber profile. It was found that hard mask etch can leave a depth footprint in the absorber layer. Thus, the etch depth uniformity of hard mask etch is crucial for achieving a uniform phase shift over the active mask area. The optimized hard mask etch process results in significantly improved mask topography without deterioration of tight CD specifications.

  16. Inductively Coupled Plasma-Induced Etch Damage of GaN p-n Junctions

    International Nuclear Information System (INIS)

    SHUL, RANDY J.; ZHANG, LEI; BACA, ALBERT G.; WILLISON, CHRISTI LEE; HAN, JUNG; PEARTON, S.J.; REN, F.

    1999-01-01

    Plasma-induced etch damage can degrade the electrical and optical performance of III-V nitride electronic and photonic devices. We have investigated the etch-induced damage of an Inductively Coupled Plasma (ICP) etch system on the electrical performance of mesa-isolated GaN pn-junction diodes. GaN p-i-n mesa diodes were formed by Cl 2 /BCl 3 /Ar ICP etching under different plasma conditions. The reverse leakage current in the mesa diodes showed a strong relationship to chamber pressure, ion energy, and plasma flux. Plasma induced damage was minimized at moderate flux conditions (≤ 500 W), pressures ≥2 mTorr, and at ion energies below approximately -275 V

  17. Inductively Coupled Plasma-Induced Etch Damage of GaN p-n Junctions

    Energy Technology Data Exchange (ETDEWEB)

    SHUL,RANDY J.; ZHANG,LEI; BACA,ALBERT G.; WILLISON,CHRISTI LEE; HAN,JUNG; PEARTON,S.J.; REN,F.

    1999-11-03

    Plasma-induced etch damage can degrade the electrical and optical performance of III-V nitride electronic and photonic devices. We have investigated the etch-induced damage of an Inductively Coupled Plasma (ICP) etch system on the electrical performance of mesa-isolated GaN pn-junction diodes. GaN p-i-n mesa diodes were formed by Cl{sub 2}/BCl{sub 3}/Ar ICP etching under different plasma conditions. The reverse leakage current in the mesa diodes showed a strong relationship to chamber pressure, ion energy, and plasma flux. Plasma induced damage was minimized at moderate flux conditions ({le} 500 W), pressures {ge}2 mTorr, and at ion energies below approximately -275 V.

  18. RITRACKS: A Software for Simulation of Stochastic Radiation Track Structure, Micro and Nanodosimetry, Radiation Chemistry and DNA Damage for Heavy Ions

    Science.gov (United States)

    Plante, I; Wu, H

    2014-01-01

    The code RITRACKS (Relativistic Ion Tracks) has been developed over the last few years at the NASA Johnson Space Center to simulate the effects of ionizing radiations at the microscopic scale, to understand the effects of space radiation at the biological level. The fundamental part of this code is the stochastic simulation of radiation track structure of heavy ions, an important component of space radiations. The code can calculate many relevant quantities such as the radial dose, voxel dose, and may also be used to calculate the dose in spherical and cylindrical targets of various sizes. Recently, we have incorporated DNA structure and damage simulations at the molecular scale in RITRACKS. The direct effect of radiations is simulated by introducing a slight modification of the existing particle transport algorithms, using the Binary-Encounter-Bethe model of ionization cross sections for each molecular orbitals of DNA. The simulation of radiation chemistry is done by a step-by-step diffusion-reaction program based on the Green's functions of the diffusion equation]. This approach is also used to simulate the indirect effect of ionizing radiation on DNA. The software can be installed independently on PC and tablets using the Windows operating system and does not require any coding from the user. It includes a Graphic User Interface (GUI) and a 3D OpenGL visualization interface. The calculations are executed simultaneously (in parallel) on multiple CPUs. The main features of the software will be presented.

  19. Study on response of CR-39 detector to light ions

    CERN Document Server

    Yamauchi, T; Oda, K

    1999-01-01

    The response of CR-39 detector has been obtained precisely for protons, deuterons, tritons, alpha-particles and lithiumions with energies of a few MeV/nucleon. The track etch rates were determined from the growth curves of pit radius and summarized as the response functions. The accuracy of this method is high enough to discriminate among hydrogen isotopes under a certain condition. The correlation between the response and LET with various cut-off energies has also been examined. It was found that LET is not an unique parameter describing the response function adequately for different ions by the same expression.

  20. Surface roughening and rippling during plasma etching of silicon: Numerical investigations and a comparison with experiments

    OpenAIRE

    Tsuda, Hirotaka; Nakazaki, Nobuya; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

    2014-01-01

    Atomic- or nanometer-scale surface roughening and rippling during Si etching in high-density Cl2 and Cl2/O2 plasmas have been investigated by developing a three-dimensional atomic-scale cellular model (ASCeM-3D), which is a 3D Monte Carlo-based simulation model for plasma-surface interactions and the feature profile evolution during plasma etching. The model took into account the behavior of Cl+ ions, Cl and O neutrals, and etch products and byproducts of SiClx and SiClxOy in microstructures ...

  1. A study of white etching crack formation by compression-torsion experiments

    OpenAIRE

    S. Averbeck; E. Kerscher

    2016-01-01

    In this study, an attempt was made to recreate the bearing damage phenomenon “White Etching Cracks” with a simplified testing setup. Rolling contact fatigue conditions were simulated with in-phase and out-ofphase cyclic compression-torsion experiments on 100Cr6 steel specimens. The results are compared in terms of microstructural change. Focused Ion Beam and metallographic analysis reveal that a fine-grained, white etching zone formed in the vicinity of the fatigue cracks of specimens tested ...

  2. Track detection methods of radium measurements

    International Nuclear Information System (INIS)

    Somogyi, G.

    1986-06-01

    The principles of tack formation and processing including the description of etching and etch-track evaluation for the preferably used plastic track detectors are discussed. Measuring methods to determine 226 Ra activity based either on the mapping of alpha-decaying elements in the complete U-Ra series by alpha-radiography, or on the measurement of uranium alone by neutron induced fissionography, or on the alpha-decay measurement of 222 Rn, the first daughter element of radium, and finally on the measurement of alpha-tracks originating from radium itself, which is separated from its parent nuclides are described in detail. (V.N.)

  3. A String Model Etching Algorithm

    Science.gov (United States)

    1979-10-18

    simulator, and especially to T. Van Duzer , who has provided continuous encouragement, suggestions, and computer funds. References [1] A.R...Neureuther, R.E. Jewett, P.I. Hagouel and T. Van Duzer , "Surface Etching Simula- tion and Applications in IC Processing", Kodak Microelectronics Seminar

  4. ions

    African Journals Online (AJOL)

    (MP2 B2). In order to draw the final conclusion about the content of the isomers of pentaatomic ions in saturated vapor over cesium chloride, we have taken into account the entropy factor. We considered the isomerization reactions which are given below: Cs3Cl2. + (V-shaped) = Cs3Cl2. + (cyclic or bipyramidal). (1). Cs2Cl3.

  5. Biophysical calculations of cell killing probability by the amorphous track structure model for heavy-ion beams

    International Nuclear Information System (INIS)

    Kase, Yuki; Matsufuji, Naruhiro; Furusawa, Yoshiya; Kanai, Tatsuaki

    2007-01-01

    In a treatment planning of heavy-ion radiotherapy, it is necessary to estimate the biological effect of the heavy-ion beams. Physical dose should be associated with the relative biological effectiveness (RBE) at each point. Presently, carbon ion radiotherapy has been carried out at the National Institute Radiological Sciences (NIRS) in Japan and the Gesellschaft fuer Schwerionenforschung mbH (GSI) in Germany. Both facilities take individual approach for the calculation of the RBE value. At NIRS, the classical LQ model has been used while the local effect model (LEM) has been incorporated into the treatment planning system at GSI. The first aim of this study is to explain the RBE model of NIRS by the microdosimetric kinetic model (MKM). In addition, the clarification of similarities and differences between the MKM and the LEM was also investigated. (author)

  6. Influence of the wafer biasing frequency upon etching of polymide

    International Nuclear Information System (INIS)

    Sauve, G.; Arnal, Y.; Grenier, R.; Moisan, M.

    1989-01-01

    In the commonly used RF capacitive discharge, the biasing voltage appearing on the wafer results from the discharge operating conditions and cannot be set independently, for example, from the plasma density. In electrodeless high frequency (HF) produced plasmas, independent biasing of the wafer is possible. In particular, one can set the biasing voltage at a frequency different from that of the HF field sustaining the plasma. In that respect, it has been shown that biasing the wafer at 13.56 MHz in a 2.45 GHz microwave sustained plasma can lead to a substantial increase in the etch rate. The influence on etch rate when biasing the wafer at frequencies f that are below and above the ion plasma frequency p i . This experiment is performed in a reactor that was recently developed for the study of the influence of the plasma stimulating frequency (13.56-2450 MHz) upon the etching of polyimide. In such a device, the plasma is sustained by a surface wave. In the present work, the authors are concerned with the etch rate of Ciba-Geigy XU-287 polyimide in an O 2 -CF 4 discharge sustained at a fixed frequency of 200 MHz

  7. Tracking studies on the effects of magnet multipoles on the aperture of the RHIC heavy ion collider

    International Nuclear Information System (INIS)

    Dell, G.F.; Parzen, G.

    1985-01-01

    Tracking studies including the effects of random multipoles resulting from construction errors have been made for RHIC with two independent tracking programs at three different tunes. The studies were made using ten different sets of random errors for each of the programs. The aperture was defined as the worst case, and the results of the two programs are in good agreement. A second set of studies was made for which the number of dipoles was doubled to determine whether doubling the number of independent random errors results in a reduction of the effects or random multipoles. The results for the two cases, one dipole per half cell and two dipoles per half cell, indicate there is little difference in dynamic aperture. 3 refs., 3 figs

  8. A GEM-TPC in twin configuration for the Super-FRS tracking of heavy ions at FAIR

    Science.gov (United States)

    García, F.; Grahn, T.; Hoffmann, J.; Jokinen, A.; Kaya, C.; Kunkel, J.; Rinta-Antila, S.; Risch, H.; Rusanov, I.; Schmidt, C. J.; Simon, H.; Simons, C.; Turpeinen, R.; Voss, B.; Äystö, J.; Winkler, M.

    2018-03-01

    The GEM-TPC described herein will be part of the standard beam-diagnostics equipment of the Super-FRS. This chamber will provide tracking information for particle identification at rates up to 1 MHz on an event-by-event basis. The key requirements of operation for these chambers are: close to 100% tracking efficiency under conditions of high counting rate, spatial resolution below 1 mm and a superb large dynamic range covering projectiles from Z = 1 up to Z = 92. The current prototype consists of two GEM-TPCs inside a single vessel, which are operating independently and have electrical drift fields in opposite directions. The twin configuration is done by flipping one of the GEM-TPCs on the middle plane with respect to the second one. In order to put this development in context, the evolution of previous prototypes will be described and its performances discussed. Finally, this chamber was tested at the University of Jyväskylä accelerator with proton projectiles and at GSI with Uranium, Xenon, fragments and Carbon beams. The results obtained have shown a position resolution between 120 to 300 μm at moderate counting rate under conditions of full tracking efficiency.

  9. Etching patterns on the micro‐ and nanoscale

    DEFF Research Database (Denmark)

    Michael-Lindhard, Jonas; Herstrøm, Berit; Stöhr, Frederik

    2014-01-01

    Dry etching is widely used for realizing micro‐ and nanostructured devices in various materials. Here, theavailable dry etching techniques and their capabilities at DTU‐Danchip are presented. What sets the dry etching apart from the traditional wet etching in which a chemical agent dissolved...... and polymer injection molding. High precision patterns of, for instance microfluidic devices, are etched intosilicon which is then electroplated with nickel that will serve as a stamp in the polymer injection molding tool where thousands of devices may be replicated. In addition to silicon and its derived...

  10. Simulating radial dose of ion tracks in liquid water simulated with Geant4-DNA: A comparative study

    Czech Academy of Sciences Publication Activity Database

    Incerti, S.; Psaltaki, M.; Gillet, P.; Barberet, P.; Bardies, M.; Bernal, M. A.; Bordage, M. C.; Breton, V.; Davídková, Marie; Delage, E.; El Bitar, Z.; Francis, Z.; Guatelli, S.; Ivanchenko, A.; Ivanchenko, V.; Karamitros, M.; Lee, S. B.; Maigne, L.; Meylan, S.; Murakami, K.; Nieminen, P.; Payno, H.; Perrot, Y.; Petrovic, I.; Pham, Q. T.; Ristic-Fira, A.; Santin, G.; Sasaki, T.; Seznec, H.; Shin, J. I.; Štěpán, Václav; Tran, H. N.; Villagrasa, C.

    2014-01-01

    Roč. 333, AUG (2014), s. 92-98 ISSN 0168-583X Institutional support: RVO:61389005 Keywords : Monte-Carlo-Simulation * Tissue-Equivalent gas * heavy-ion * Alpha-Beams * Particles * Dosimetry * Protons * Models * Codes * Path Subject RIV: BO - Biophysics Impact factor: 1.124, year: 2014

  11. Use of CR-39 foils for personnel neutron dosimetry: improved electrochemical etching chambers and procedures

    International Nuclear Information System (INIS)

    Hankins, D.E.; Homann, S.G.; Westermark, J.

    1986-01-01

    The electrochemical etching procedures for the new dosimetry system that uses foils of CR-39 plastic has been improved. During 1985, the etching chambers were modified to correct several problems and the changes to the etching procedures were studied, which gave a more uniform track density and size. The currently recommended etch parameters are given. A new generation of CR-39 material from the manufacturer proved to have a considerably lower background track density and a higher sensitivity; the new foils are also more uniform in thickness, which eliminates the need to numerically compensate for thickness variations. The energy dependence of the CR-39 using monoenergetic neutrons from accelerators at Battelle Northwest Laboratories and at Los Alamos National Laboratory was determined. Some variation was found in the energy dependence, but it is believed this was caused by changes in the etching procedures and by uncertainties in the fluences of the neutrons from the accelerators. A means by which the counting of CR-39 tracks may be automated is suggested; this would be very useful in adapting the CR-39 dosimetry system to large-scale use

  12. Oxygen etching mechanism in carbon-nitrogen (CNx) domelike nanostructures

    International Nuclear Information System (INIS)

    Acuna, J. J. S.; Figueroa, C. A.; Kleinke, M. U.; Alvarez, F.; Biggemann, D.

    2008-01-01

    We report a comprehensive study involving the ion beam oxygen etching purification mechanism of domelike carbon nanostructures containing nitrogen. The CN x nanodomes were prepared on Si substrate containing nanometric nickel islands catalyzed by ion beam sputtering of a carbon target and assisting the deposition by a second nitrogen ion gun. After preparation, the samples were irradiated in situ by a low energy ion beam oxygen source and its effects on the nanostructures were studied by x-ray photoelectron spectroscopy in an attached ultrahigh vacuum chamber, i.e., without atmospheric contamination. The influence of the etching process on the morphology of the samples and structures was studied by atomic force microscopy and field emission gun-secondary electron microscopy, respectively. Also, the nanodomes were observed by high resolution transmission electron microscopy. The oxygen atoms preferentially bond to carbon atoms by forming terminal carbonyl groups in the most reactive parts of the nanostructures. After the irradiation, the remaining nanostructures are grouped around two well-defined size distributions. Subsequent annealing eliminates volatile oxygen compounds retained at the surface. The oxygen ions mainly react with nitrogen atoms located in pyridinelike structures

  13. Dry etching of polydimethylsiloxane using microwave plasma

    Science.gov (United States)

    Hwang, Sung Jin; Oh, Dong Joon; Jung, Phill Gu; Lee, Sang Min; Go, Jeung Sang; Kim, Joon-Ho; Hwang, Kyu-Youn; Ko, Jong Soo

    2009-09-01

    This paper presents a new polydimethylsiloxane (PDMS) dry-etching method that uses microwave plasma. The applicability of the method for fabricating microstructures and removing residual PDMS is also verified. The etch rate of PDMS was dominantly influenced by the gas flux ratio of CF4/O2 and the microwave power. While the PDMS etch rate increased as the flux ratio of CF4 was increased, the etch rate decreased as the flux ratio of O2 was increased. The maximum etch rate of 4.31 µm min-1 was achieved when mixing oxygen (O2) and tetrafluoromethane (CF4) at a 1:2 ratio at 800 W power. The PDMS etch rate almost linearly increased with the microwave power. The ratio of the vertical etch rate to the lateral etch rate was in a range of 1.14-1.64 and varied with the gas fluxes. In consideration of potential applications of the proposed PDMS etching method, array-type PDMS microwells and network-type microprotrusion structures were fabricated. The contact angle was dramatically increased from 104° (non-etched PDMS surface) to 148° (etched PDMS surface) and the surface was thereby modified to be superhydrophobic. In addition, a thin PDMS skin that blocked holes and PDMS residues affixed in nickel microstructures was successively removed.

  14. Efficiency calibration of solid track spark auto counter

    International Nuclear Information System (INIS)

    Wang Mei; Wen Zhongwei; Lin Jufang; Liu Rong; Jiang Li; Lu Xinxin; Zhu Tonghua

    2008-01-01

    The factors influencing detection efficiency of solid track spark auto counter were analyzed, and the best etch condition and parameters of charge were also reconfirmed. With small plate fission ionization chamber, the efficiency of solid track spark auto counter at various experiment assemblies was re-calibrated. The efficiency of solid track spark auto counter at various experimental conditions was obtained. (authors)

  15. Elucidating distinct ion channel populations on the surface of hippocampal neurons via single-particle tracking recurrence analysis

    Science.gov (United States)

    Sikora, Grzegorz; Wyłomańska, Agnieszka; Gajda, Janusz; Solé, Laura; Akin, Elizabeth J.; Tamkun, Michael M.; Krapf, Diego

    2017-12-01

    Protein and lipid nanodomains are prevalent on the surface of mammalian cells. In particular, it has been recently recognized that ion channels assemble into surface nanoclusters in the soma of cultured neurons. However, the interactions of these molecules with surface nanodomains display a considerable degree of heterogeneity. Here, we investigate this heterogeneity and develop statistical tools based on the recurrence of individual trajectories to identify subpopulations within ion channels in the neuronal surface. We specifically study the dynamics of the K+ channel Kv1.4 and the Na+ channel Nav1.6 on the surface of cultured hippocampal neurons at the single-molecule level. We find that both these molecules are expressed in two different forms with distinct kinetics with regards to surface interactions, emphasizing the complex proteomic landscape of the neuronal surface. Further, the tools presented in this work provide new methods for the analysis of membrane nanodomains, transient confinement, and identification of populations within single-particle trajectories.

  16. Thermal history-based etching

    Science.gov (United States)

    Simpson, John T.

    2017-11-28

    A method for adjusting an etchability of a first borosilicate glass by heating the first borosilicate glass; combining the first borosilicate glass with a second borosilicate glass to form a composite; and etching the composite with an etchant. A material having a protrusive phase and a recessive phase, where the protrusive phase protrudes from the recessive phase to form a plurality of nanoscale surface features, and where the protrusive phase and the recessive phase have the same composition.

  17. Atomistic simulations of graphite etching at realistic time scales.

    Science.gov (United States)

    Aussems, D U B; Bal, K M; Morgan, T W; van de Sanden, M C M; Neyts, E C

    2017-10-01

    Hydrogen-graphite interactions are relevant to a wide variety of applications, ranging from astrophysics to fusion devices and nano-electronics. In order to shed light on these interactions, atomistic simulation using Molecular Dynamics (MD) has been shown to be an invaluable tool. It suffers, however, from severe time-scale limitations. In this work we apply the recently developed Collective Variable-Driven Hyperdynamics (CVHD) method to hydrogen etching of graphite for varying inter-impact times up to a realistic value of 1 ms, which corresponds to a flux of ∼10 20 m -2 s -1 . The results show that the erosion yield, hydrogen surface coverage and species distribution are significantly affected by the time between impacts. This can be explained by the higher probability of C-C bond breaking due to the prolonged exposure to thermal stress and the subsequent transition from ion- to thermal-induced etching. This latter regime of thermal-induced etching - chemical erosion - is here accessed for the first time using atomistic simulations. In conclusion, this study demonstrates that accounting for long time-scales significantly affects ion bombardment simulations and should not be neglected in a wide range of conditions, in contrast to what is typically assumed.

  18. Influence of Pre-etching Times on Fatigue Strength of Self-etch Adhesives to Enamel.

    Science.gov (United States)

    Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Endo, Hajime; Tsuchiya, Kenji; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

    To use shear bond strength (SBS) and shear fatigue strength (SFS) testing to determine the influence of phosphoric acid pre-etching times prior to application of self-etch adhesives on enamel bonding. Two single-step self-etch universal adhesives (Prime&Bond Elect and Scotchbond Universal), a conventional single-step self-etch adhesive (G-ӕnial Bond), and a conventional two-step self-etch adhesive (OptiBond XTR) were used. The SBS and SFS were obtained with phosphoric acid pre-etching for 3, 10, or 15 s prior to application of the adhesives, and without pre-etching (0 s) as a control. A staircase method was used to determine the SFS with 10 Hz frequency for 50,000 cycles or until failure occurred. The mean demineralization depth for each treated enamel surface was also measured using a profilometer. For all the adhesives, the groups with pre-etching showed significantly higher SBS and SFS than groups without pre-etching. However, there was no significant difference in SBS and SFS among groups with > 3 s of preetching. In addition, although the groups with pre-etching showed significantly deeper demineralization depths than groups without pre-etching, there was no significant difference in depth among groups with > 3 s of pre-etching. Three seconds of phosphoric acid pre-etching prior to application of self-etch adhesive can enhance enamel bonding effectiveness.

  19. Plasmoids for etching and deposition

    Science.gov (United States)

    Pothiraja, Ramasamy; Bibinov, Nikita; Awakowicz, Peter

    2014-11-01

    In this manuscript we show fascinating properties of plasmoids, which are known to be self-sustained plasma entities, and can exist without being in contact with any power supply. Plasmoids are produced in a filamentary discharge in a Ar/CH4 mixture with a high production rate of about 105 s-1. It is observed that plasmoids etch the solid amorphous hydrocarbon film with high efficiency. Energy density of the plasmoid, which is estimated on the basis of glowing area of plasmoids in the photographic image and sublimation enthalpy of the etched hydrocarbon film, amounts to about 90 J m-3. This value is much lower than the energy density of observed ball lightning (natural plasmoid). A very surprising property is an attraction between plasmoids, and the formation of plasmoid-groups. Because of this attractive force, carbon material, which is collected in plasmoids by etching of the hydrocarbon film or by propagation through a methane/argon gas mixture, is compressed into crystals.

  20. Inductively coupled plasma etch damage in (-201) Ga2O3 Schottky diodes

    Science.gov (United States)

    Yang, Jiancheng; Ahn, Shihyun; Ren, F.; Khanna, Rohit; Bevlin, Kristen; Geerpuram, Dwarakanath; Pearton, S. J.; Kuramata, A.

    2017-04-01

    Bulk, single-crystal Ga2O3 was etched in BCl3/Ar inductively coupled plasmas as a function of ion impact energy. For pure Ar, the etch rate (R) was found to increase with ion energy (E) as predicted from a model of ion enhanced sputtering by a collision-cascade process, R ∝(E0.5 - ETH0.5), where the threshold energy for Ga2O3, ETH, was experimentally determined to be ˜75 eV. When BCl3 was added, the complexity of the ion energy distribution precluded, obtaining an equivalent threshold. Electrically active damage introduced during etching was quantified using Schottky barrier height and diode ideality factor measurements obtained by evaporating Ni/Au rectifying contacts through stencil masks onto the etched surfaces. For low etch rate conditions (˜120 Å min-1) at low powers (150 W of the 2 MHz ICP source power and 15 W rf of 13.56 MHz chuck power), there was only a small decrease in reverse breakdown voltage (˜6%), while the barrier height decreased from 1.2 eV to 1.01 eV and the ideality factor increased from 1.00 to 1.06. Under higher etch rate (˜700 Å min-1) and power (400 W ICP and 200 W rf) conditions, the damage was more significant, with the reverse breakdown voltage decreasing by ˜35%, the barrier height was reduced to 0.86 eV, and the ideality factor increased to 1.2. This shows that there is a trade-off between the etch rate and near-surface damage.

  1. A study of techniques applicable to the automated assessment of alpha and proton-induced etch pits

    International Nuclear Information System (INIS)

    Harvey, J.R.; Weeks, A.R.

    1984-01-01

    Two approaches to the automation of the read-out of chemically-etched tracks have been explored,. In the first, the etch pits are filled with a scintillator and irradiated with alpha particles within a light-tight assembly. The size and number of light pulses generated are related to the size and number of etch pits present. This technique has found application in the assessment of etch pits due to alpha particles from atmospheric radon. In the second approach, several similar techniques have been explored. These techniques have the common feature that optical systems can be developed such that light is transmitted preferentially through etch pits. A variety of techniques for illumination, detection and interpretation of the resultant information have been explored and conclusions drawn. (author)

  2. Three-dimensional photonic crystals created by single-step multi-directional plasma etching.

    Science.gov (United States)

    Suzuki, Katsuyoshi; Kitano, Keisuke; Ishizaki, Kenji; Noda, Susumu

    2014-07-14

    We fabricate 3D photonic nanostructures by simultaneous multi-directional plasma etching. This simple and flexible method is enabled by controlling the ion-sheath in reactive-ion-etching equipment. We realize 3D photonic crystals on single-crystalline silicon wafers and show high reflectance (>95%) and low transmittance (photonic bandgap. Moreover, our method simply demonstrates Si-based 3D photonic crystals that show the photonic bandgap effect in a shorter wavelength range around 0.6 μm, where further fine structures are required.

  3. On the topography of sputtered or chemically etched crystals: surface energies minimised

    International Nuclear Information System (INIS)

    Chadderton, L.T.; Cope, J.O.

    1984-01-01

    The sputtering of single or polycrystalline metal surfaces by heavy ions gives rise to the characteristic topographical features of etch pits, ripples, and cones (pyramids). For cones and pyramids, in particular, no completely satisfactory explanation exists as to the origin of the basic geometry. Scanning electron micrographs are shown. It is proposed that for topographical features of both chemical etch and ion beam origin on single crystal surfaces, the presence of facets on cones and pyramids in particular, is due to the minimization of surface energy. (U.K.)

  4. A study of white etching crack formation by compression-torsion experiments

    Directory of Open Access Journals (Sweden)

    S. Averbeck

    2016-10-01

    Full Text Available In this study, an attempt was made to recreate the bearing damage phenomenon “White Etching Cracks” with a simplified testing setup. Rolling contact fatigue conditions were simulated with in-phase and out-ofphase cyclic compression-torsion experiments on 100Cr6 steel specimens. The results are compared in terms of microstructural change. Focused Ion Beam and metallographic analysis reveal that a fine-grained, white etching zone formed in the vicinity of the fatigue cracks of specimens tested with the in-phase load pattern. In contrast, no such structures were found after testing the out-of-phase load pattern. The properties of the white etching zone are characterised in more detail and compared with White Etching Cracks

  5. Dry Etching of Copper Phthalocyanine Thin Films: Effects on Morphology and Surface Stoichiometry

    Directory of Open Access Journals (Sweden)

    Michael J. Brett

    2012-08-01

    Full Text Available We investigate the evolution of copper phthalocyanine thin films as they are etched with argon plasma. Significant morphological changes occur as a result of the ion bombardment; a planar surface quickly becomes an array of nanopillars which are less than 20 nm in diameter. The changes in morphology are independent of plasma power, which controls the etch rate only. Analysis by X-ray photoelectron spectroscopy shows that surface concentrations of copper and oxygen increase with etch time, while carbon and nitrogen are depleted. Despite these changes in surface stoichiometry, we observe no effect on the work function. The absorbance and X-ray diffraction spectra show no changes other than the peaks diminishing with etch time. These findings have important implications for organic photovoltaic devices which seek nanopillar thin films of metal phthalocyanine materials as an optimal structure.

  6. Solid state nuclear track detection principles, methods and applications

    CERN Document Server

    Durrani, S A; ter Haar, D

    1987-01-01

    Solid State Nuclear Track Detection: Principles, Methods and Applications is the second book written by the authors after Nuclear Tracks in Solids: Principles and Applications. The book is meant as an introduction to the subject solid state of nuclear track detection. The text covers the interactions of charged particles with matter; the nature of the charged-particle track; the methodology and geometry of track etching; thermal fading of latent damage trails on tracks; the use of dielectric track recorders in particle identification; radiation dossimetry; and solid state nuclear track detecti

  7. Fabrication of thin vertical mirrors through plasma etch and KOH:IPA polishing for integration into MEMS electrostatic actuators

    Science.gov (United States)

    Huda, M. Q.; Amin, T. M. F.; Ning, Y.; McKinnon, G.; Tulip, J.; Jäger, W.

    2013-03-01

    We developed a process for the fabrication of thin vertical mirrors as integrated structures of MEMS electrostatic actuators. The mirrors can be implemented as a vertical extension of the actuator sidewall, or can be positioned at any movable part of the actuator. The process involves the fabrication of a mesa structure on the handle layer of a silicon-oninsulator (SOI) wafer through deep reactive ion etching (DRIE). The etch/passivation cycles of the DRIE process were optimized to achieve vertical etch profiles with a depth of up to 200 μm with an aspect ratio of 10:1. The DRIE process introduced typical etch scallops with peak-to-valley and rms roughnesses on the order of 100 nm and 30 nm, respectively. A mask layer was used to pattern a 2.1 μm sacrificial oxide layer for the mesa structure. A second mask layer allowed us to define a large etch cavity for handle layer back-etch. The DRIE etched mesa structure was then etched with diluted potassium hydroxide (KOH) in isopropyl alcohol (IPA). Temperature and etch concentration were optimized for the removal of etch scallops without the formation of etch facets. The etch scallops were almost completely removed and mirror quality surfaces were achieved. The developed mesa structures are suitable for integration into actuators that are patterned in the device layer. A third masking layer, aligned through infrared camera, was used to position the thin vertical mirror at the actuator sidewall. The process provides design flexibility in integrating vertical mirrors of adjustable dimensions to movable elements of MEMS structures.

  8. Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF{sub 6} based plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Perros, Alexander; Bosund, Markus; Sajavaara, Timo; Laitinen, Mikko; Sainiemi, Lauri; Huhtio, Teppo; Lipsanen, Harri [Department of Micro- and Nanosciences, Aalto University School of Electrical Engineering, P.O. Box 13500, FI-00076 Aalto (Finland); Department of Physics, University of Jyvaeskylae, P.O. Box 35, 40014, Jyvaeskylae,Finland (Finland); Department of Micro and Nanosciences, School of Electrical Engineering, Aalto University, P.O. Box 13500, FI-00076, Aalto (Finland)

    2012-01-15

    The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 deg. C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF{sub 6} and O{sub 2} under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film's removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film removal because the film was inert to the SF{sub x}{sup +} and O{sup +} chemistries. The etch experiments showed the film to be a resilient masking material. This makes it an attractive candidate for use as an etch mask in demanding SF{sub 6} based plasma etch applications, such as through-wafer etching, or when oxide films are not suitable.

  9. The relationship between fission track length and track density in apatite

    International Nuclear Information System (INIS)

    Laslett, G.M.; Gleadow, A.J.W.; Duddy, I.R.

    1984-01-01

    Fission track dating is based upon an age equation derived from a random line segment model for fission tracks. This equation contains the implicit assumption of a proportional relationship between the true mean length of fission tracks and their track density in an isotropic medium. Previous experimental investigation of this relationship for both spontaneous and induced tracks in apatite during progressive annealment model in an obvious fashion. Corrected equations relating track length and density for apatite, an anisotropic mineral, show that the proportionality in this case is between track density and a length factor which is a generalization of the mean track length combining the actual length and crystallographic orientation of the track. This relationship has been experimentally confirmed for induced tracks in Durango apatite, taking into account bias in sampling of the track lengths, and the effect of the bulk etching velocity. (author)

  10. Improved thrombogenicity on oxygen etched Ti6Al4V surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Riedel, Nicholas A. [Department of Mechanical Engineering, Colorado State University, Fort Collins, CO 80523 (United States); Smith, Barbara S. [School of Biomedical Engineering, Colorado State University, Fort Collins, CO 80523 (United States); Williams, John D. [Department of Mechanical Engineering, Colorado State University, Fort Collins, CO 80523 (United States); Popat, Ketul C., E-mail: ketul.popat@colostate.edu [Department of Mechanical Engineering, Colorado State University, Fort Collins, CO 80523 (United States); School of Biomedical Engineering, Colorado State University, Fort Collins, CO 80523 (United States)

    2012-07-01

    Thrombus formation on blood contacting biomaterials continues to be a key factor in initiating a critical mode of failure in implantable devices, requiring immediate attention. In the interest of evaluating a solution for one of the most widely used biomaterials, titanium and its alloys, this study focuses on the use of a novel surface oxidation treatment to improve the blood compatibility. This study examines the possibility of using oblique angle ion etching to produce a high quality oxide layer that enhances blood compatibility on medical grade titanium alloy Ti6Al4V. An X-ray photoelectron spectroscopy (XPS) analysis of these oxygen-rich surfaces confirmed the presence of TiO{sub 2} peaks and also indicated increased surface oxidation as well as a reduction in surface defects. After 2 h of contact with whole human plasma, the oxygen etched substrates demonstrated a reduction in both platelet adhesion and activation as compared to bare titanium substrates. The whole blood clotting behavior was evaluated for up to 45 min, showing a significant decrease in clot formation on oxygen etched substrates. Finally, a bicinchoninic acid (BCA) total protein assay and XPS were used to evaluate the degree of key blood serum protein (fibrinogen, albumin, immunoglobulin G) adsorption on the substrates. The results showed similar protein levels for both the oxygen etched and control substrates. These results indicate that oblique angle oxygen etching may be a promising method to increase the thrombogenicity of Ti6Al4V. - Highlights: Black-Right-Pointing-Pointer Oblique angle oxygen ion etching creates a high quality, uniform oxide surface. Black-Right-Pointing-Pointer Oxygen etched substrates showed fewer adhered platelets. Black-Right-Pointing-Pointer Platelet activation was reduced by the improved oxide surface. Black-Right-Pointing-Pointer Oxygen etched substrates exhibited increased whole blood clotting times. Black-Right-Pointing-Pointer Although clotting reductions were

  11. Optimization of transport processes in etched track-based biosensors

    Czech Academy of Sciences Publication Activity Database

    Fink, Dietmar; Vacík, Jiří; Alfonta, L.; Kiv, A.; Mandabi, Y.; Munoz, G. H.

    2012-01-01

    Roč. 167, č. 8 (2012), s. 548-568 ISSN 1042-0150 Institutional support: RVO:61389005 Keywords : diffusion * theory * polymers * biotechnology Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.502, year: 2012

  12. Distinct Photopolymerization Efficacy on Dentin of Self-etch Adhesives

    Science.gov (United States)

    Zhang, Y.; Wang, Y.

    2012-01-01

    The effect of application mode on polymerization effectiveness of self-etch adhesives with different pHs has rarely been studied. We applied 2 self-etch adhesives—Adper Prompt L-Pop (APLP, pH ~ 0.8) and Adper Easy-Bond (AEB, pH ~ 2.5)—to dentin with or without agitation (dynamic or static application), to investigate photopolymerization efficacy on dentin, and to understand the role of chemical interaction/reaction between adhesives and dentin. Micro-Raman spectra and imaging were acquired across the dentin/adhesive (D/A) interface. The degree of conversion (DC) of each adhesive as a function of position was calculated. SEM-EDS was used to obtain the elemental distribution along the interface. Photopolymerization efficacies of the two self-etch adhesives on dentin were apparently different. APLP exhibited decreasing DCs as the distance from the D/A interface became greater for both application modes, while the DCs for the dynamic mode were much higher than those for the static mode. As for AEB, the DCs remained almost constant across the adhesive layer and showed no significant difference between two modes. Raman spectral analysis disclosed that the chemical interaction between dentin and adhesives was responsible for the observations. We also verified this by tracking the distribution of the elements Ca and P in the adhesive layers. PMID:22736445

  13. Dry etching technologies for reflective multilayer

    Science.gov (United States)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

    2012-11-01

    We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

  14. A New Method for State of Charge Estimation of Lithium-Ion Battery Based on Strong Tracking Cubature Kalman Filter

    Directory of Open Access Journals (Sweden)

    Bizhong Xia

    2015-11-01

    Full Text Available The estimation of state of charge (SOC is a crucial evaluation index in a battery management system (BMS. The value of SOC indicates the remaining capacity of a battery, which provides a good guarantee of safety and reliability of battery operation. It is difficult to get an accurate value of the SOC, being one of the inner states. In this paper, a strong tracking cubature Kalman filter (STCKF based on the cubature Kalman filter is presented to perform accurate and reliable SOC estimation. The STCKF algorithm can adjust gain matrix online by introducing fading factor to the state estimation covariance matrix. The typical second-order resistor-capacitor model is used as the battery’s equivalent circuit model to dynamically simulate characteristics of the battery. The exponential-function fitting method accomplishes the task of relevant parameters identification. Then, the developed STCKF algorithm has been introduced in detail and verified under different operation current profiles such as Dynamic Stress Test (DST and New European Driving Cycle (NEDC. Making a comparison with extended Kalman filter (EKF and CKF algorithm, the experimental results show the merits of the STCKF algorithm in SOC estimation accuracy and robustness.

  15. Low-pressure plasma-etching of bulk polymer materials using gas mixture of CF4 and O2

    Science.gov (United States)

    Nabesawa, Hirofumi; Hiruma, Takaharu; Hitobo, Takeshi; Wakabayashi, Suguru; Asaji, Toyohisa; Abe, Takashi; Seki, Minoru

    2013-11-01

    In this study, we have proposed a low-pressure reactive ion etching of bulk polymer materials with a gas mixture of CF4 and O2, and have achieved precise fabrication of poly(methyl methacrylate) (PMMA) and perfluoroalkoxy (PFA) bulk polymer plates with high-aspect-ratio and narrow gap array structures, such as, pillar, frustum, or cone, on a nano/micro scale. The effects of the etching conditions on the shape and size of each pillar were evaluated by changing etching duration and the size/material of etching mask. The fabricated PMMA array structures indicate possibilities of optical waveguide and nanofiber array. PFA cone array structures showed super-hydrophobicity without any chemical treatments. Also, polystyrene-coated silica spheres were used as an etching mask for the pillar array structure formation to control the gap between pillars.

  16. Anisotropic etching of silicon for application in micro machine using plasma of SF{sub 6}/CH{sub 4}/O{sub 2}/Ar and SF{sub 6}/CF{sub 4}/O{sub 2}/Ar; Grabado anisotropico de silicio para aplicacion en micromaquinado usando plasmas de SF{sub 6}/CH{sub 4}/O{sub 2}/Ar y SF{sub 6}/CF{sub 4}/O{sub 2}/Ar

    Energy Technology Data Exchange (ETDEWEB)

    Reyes B, C. [Instituto Nacional de Astrofisica, Optica y Electronica, A.P. 51, 72000 Puebla (Mexico); Moshkalyov, S.A.; Swart, J.W. [Centro de Componentes Semiconductores, UNICAMP, 6061 CEP. 13083-970, Campinas, Sao Paulo (Brazil)]. e-mail: creyes@inaoep.mx

    2004-07-01

    We investigated the reactive ion etching of silicon using SF{sub 6}/CH{sub 4}(CF{sub 4})/O{sub 2}/Ar gas mixtures containing fluorine for MEMS applications. Etch rates and anisotropy of etch profiles were examined as a function of gas composition, material of electrode, and RF power. Etch depths were measured using a profilometers, and etch profiles were analyzed by scanning electron microscope. As a mask material, an aluminium film deposited by evaporation, was used. High anisotropy of etching of 0.95 was achieved at etch depths up to 20-30 micrometers and etch rates of approximately 0.3-0.6 {mu}m/min. Highly anisotropic etching is based on a mechanism that enhance the ion bombarding and protects the sidewalls due to polymerization and/or oxidation mechanisms in order to avoid the lateral etch. However, under the anisotropic etching conditions, considerable damages of the etched surfaces (roughness formation), were observed. After etching experiments, wet / dry cleaning procedures were applied to remove surface residues resulting from the reactive ion etching and to improve the etched surface morphology. (Author)

  17. Response of cellulose nitrate track detectors to electron doses

    CERN Document Server

    Segovia, N; Moreno, A; Vazquez-Polo, G; Santamaría, T; Aranda, P; Hernández, A

    1999-01-01

    In order to study alternative dose determination methods, the bulk etching velocity and the latent track annealing of LR 115 track detectors was studied during electron irradiation runs from a Pelletron accelerator. For this purpose alpha irradiated and blank detectors were exposed to increasing electron doses from 10.5 to 317.5 kGy. After the irradiation with electrons the detectors were etched under routine conditions, except for the etching time, that was varied for each electron dose in order to reach a fixed residual thickness. The variation of the bulk etching velocity as a function of each one of the electron doses supplied, was interpolated in order to obtain dosimetric response curves. The observed annealing effect on the latent tracks is discussed as a function of the total electron doses supplied and the temperature.

  18. Effect of track structure and radioprotectors on the induction of oncogenic transformation in murine fibroblasts by heavy ions

    Science.gov (United States)

    Miller, R. C.; Martin, S. G.; Hanson, W. R.; Marino, S. A.; Hall, E. J.

    1998-11-01

    The oncogenic potential of high-energy 56Fe particles (1 GeV/nucleon) accelerated with the Alternating Gradient Synchrotron at the Brookhaven National Laboratory was examined utilizing the mouse C3H 10T12 cell model. The dose-averaged LET for high-energy 56Fe is estimated to be 143 keV/μm with the exposure conditions used in this study. For 56Fe ions, the maximum relative biological effectiveness (RBEmax) values for cell survival and oncogenic transformation were 7.71 and 16.5 respectively. Compared to 150 keV/μm 4He nuclei, high-energy 56Fe nuclei were significantly less effective in cell killing and oncogenic induction. The prostaglandin E1 analog misoprostol, an effective oncoprotector of C3H 10T12 cells exposed to X rays, was evaluated for its potential as a radioprotector of oncogenic transformation with high-energy 56Fe. Exposure of cells to misoprostol did not alter 56Fe cytotoxicity or the rate of 56Fe-induced oncogenic transformation.

  19. Erbium doped stain etched porous silicon

    International Nuclear Information System (INIS)

    Gonzalez-Diaz, B.; Diaz-Herrera, B.; Guerrero-Lemus, R.; Mendez-Ramos, J.; Rodriguez, V.D.; Hernandez-Rodriguez, C.; Martinez-Duart, J.M.

    2008-01-01

    In this work a simple erbium doping process applied to stain etched porous silicon layers (PSLs) is proposed. This doping process has been developed for application in porous silicon solar cells, where conventional erbium doping processes are not affordable because of the high processing cost and technical difficulties. The PSLs were formed by immersion in a HF/HNO 3 solution to properly adjust the porosity and pore thickness to an optimal doping of the porous structure. After the formation of the porous structure, the PSLs were analyzed by means of nitrogen BET (Brunauer, Emmett and Teller) area measurements and scanning electron microscopy. Subsequently, the PSLs were immersed in a saturated erbium nitrate solution in order to cover the porous surface. Then, the samples were subjected to a thermal process to activate the Er 3+ ions. Different temperatures and annealing times were used in this process. The photoluminescence of the PSLs was evaluated before and after the doping processes and the composition was analyzed by Fourier transform IR spectroscopy

  20. Influence of tracks densities in solid state nuclear track detectors

    International Nuclear Information System (INIS)

    Guedes O, S.; Hadler N.; Lunes, P.; Saenz T, C.

    1996-01-01

    When Solid State Nuclear Track Detectors (SSNTD) is employed to measure nuclear tracks produced mainly by fission fragments and alpha particles, it is considered that the tracks observation work is performed under an efficiency, ε 0 , which is independent of the track density (number of tracks/area unit). There are not published results or experimental data supporting such an assumption. In this work the dependence of ε 0 with track density is studied basing on experimental data. To perform this, pieces of CR-39 cut from a sole 'mother sheet' were coupled to thin uranium films for different exposition times and the resulting ratios between track density and exposition time were compared. Our results indicate that ε 0 is constant for track densities between 10 3 and 10 5 cm -2 . At our etching conditions track overlapping makes impossible the counting for densities around 1.7 x 10 5 cm -2 . For track densities less than 10 3 cm -2 , ε 0 , was not observed to be constant. (authors). 4 refs., 2 figs

  1. Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS equipment

    Directory of Open Access Journals (Sweden)

    Ann-Kathrin Kleinschmidt

    2016-11-01

    Full Text Available Reflectance anisotropy spectroscopy (RAS equipment is applied to monitor dry-etch processes (here specifically reactive ion etching (RIE of monocrystalline multilayered III–V semiconductors in situ. The related accuracy of etch depth control is better than 16 nm. Comparison with results of secondary ion mass spectrometry (SIMS reveals a deviation of only about 4 nm in optimal cases. To illustrate the applicability of the reported method in every day settings for the first time the highly etch depth sensitive lithographic process to form a film lens on the waveguide ridge of a broad area laser (BAL is presented. This example elucidates the benefits of the method in semiconductor device fabrication and also suggests how to fulfill design requirements for the sample in order to make RAS control possible.

  2. The precise energy spectra measurement of laser-accelerated MeV/n-class high-Z ions and protons using CR-39 detectors

    Science.gov (United States)

    Kanasaki, M.; Jinno, S.; Sakaki, H.; Kondo, K.; Oda, K.; Yamauchi, T.; Fukuda, Y.

    2016-03-01

    The diagnosis method, using a combination of a permanent magnet and CR-39 track detectors, has been developed to separately measure the energy spectrum of the laser-accelerated MeV/n-class high-Z ions and that of MeV protons. The main role of magnet is separating between high-Z ions and protons, not for the usual energy spectrometer, while ion energy was precisely determined from careful analysis of the etch pit shapes and the etch pit growth behaviors in the CR-39. The method was applied to laser-driven ion acceleration experiments using CO2 clusters embedded in a background H2 gas. Ion energy spectra with uncertainty ΔE  =  0.1 MeV n-1 for protons and carbon/oxygen ions were simultaneously obtained separately. The maximum energies of carbon/oxygen ions and protons were determined as 1.1  ±  0.1 MeV and 1.6  ±  0.1 MeV n-1, respectively. The sharp decrease around 1 MeV n-1 observed in the energy spectrum of carbon/oxygen ions could be due to a trace of the ambipolar hydrodynamic expansion of CO2 clusters. Thanks to the combination of the magnet and the CR-39, the method is robust against electromagnetic pulse (EMP).

  3. High-aspect ratio micro- and nanostructures enabled by photo-electrochemical etching for sensing and energy harvesting applications

    Science.gov (United States)

    Alhalaili, Badriyah; Dryden, Daniel M.; Vidu, Ruxandra; Ghandiparsi, Soroush; Cansizoglu, Hilal; Gao, Yang; Saif Islam, M.

    2018-03-01

    Photo-electrochemical (PEC) etching can produce high-aspect ratio features, such as pillars and holes, with high anisotropy and selectivity, while avoiding the surface and sidewall damage caused by traditional deep reactive ion etching (DRIE) or inductively coupled plasma (ICP) RIE. Plasma-based techniques lead to the formation of dangling bonds, surface traps, carrier leakage paths, and recombination centers. In pursuit of effective PEC etching, we demonstrate an optical system using long wavelength (λ = 975 nm) infra-red (IR) illumination from a high-power laser (1-10 W) to control the PEC etching process in n-type silicon. The silicon wafer surface was patterned with notches through a lithography process and KOH etching. Then, PEC etching was introduced by illuminating the backside of the silicon wafer to enhance depth, resulting in high-aspect ratio structures. The effect of the PEC etching process was optimized by varying light intensities and electrolyte concentrations. This work was focused on determining and optimizing this PEC etching technique on silicon, with the goal of expanding the method to a variety of materials including GaN and SiC that are used in designing optoelectronic and electronic devices, sensors and energy harvesting devices.

  4. Micro-texturing into DLC/diamond coated molds and dies via high density oxygen plasma etching

    Directory of Open Access Journals (Sweden)

    Yunata Ersyzario Edo

    2015-01-01

    Full Text Available Diamond-Like Carbon (DLC and Chemical Vapor Deposition (CVD-diamond films have been widely utilized not only as a hard protective coating for molds and dies but also as a functional substrate for bio-MEMS/NEMS. Micro-texturing into these hard coated molds and dies provides a productive tool to duplicate the original mother micro-patterns onto various work materials and to construct any tailored micro-textures for sensors and actuators. In the present paper, the high density oxygen plasma etching method is utilized to make micro-line and micro-groove patterns onto the DLC and diamond coatings. Our developing oxygen plasma etching system is introduced together with characterization on the plasma state during etching. In this quantitative plasma diagnosis, both the population of activated species and the electron and ion densities are identified through the emissive light spectroscopy and the Langmuir probe method. In addition, the on-line monitoring of the plasmas helps to describe the etching process. DLC coated WC (Co specimen is first employed to describe the etching mechanism by the present method. Chemical Vapor Deposition (CVD diamond coated WC (Co is also employed to demonstrate the reliable capacity of the present high density oxygen plasma etching. This oxygen plasma etching performance is discussed by comparison of the etching rates.

  5. Structural and optical properties of thin films porous amorphous silicon carbide formed by Ag-assisted photochemical etching

    International Nuclear Information System (INIS)

    Boukezzata, A.; Keffous, A.; Cheriet, A.; Belkacem, Y.; Gabouze, N.; Manseri, A.; Nezzal, G.; Kechouane, M.; Bright, A.; Guerbous, L.; Menari, H.

    2010-01-01

    In this work, we present the formation of porous layers on hydrogenated amorphous SiC (a-SiC: H) by Ag-assisted photochemical etching using HF/K 2 S 2 O 8 solution under UV illumination at 254 nm wavelength. The amorphous films a-SiC: H were elaborated by d.c. magnetron sputtering using a hot pressed polycrystalline 6H-SiC target. Because of the high resistivity of the SiC layer, around 1.6 MΩ cm and in order to facilitate the chemical etching, a thin metallic film of high purity silver (Ag) has been deposited under vacuum onto the thin a-SiC: H layer. The etched surface was characterized by scanning electron microscopy, secondary ion mass spectroscopy, infrared spectroscopy and photoluminescence. The results show that the morphology of etched a-SiC: H surface evolves with etching time. For an etching time of 20 min the surface presents a hemispherical crater, indicating that the porous SiC layer is perforated. Photoluminescence characterization of etched a-SiC: H samples for 20 min shows a high and an intense blue PL, whereas it has been shown that the PL decreases for higher etching time. Finally, a dissolution mechanism of the silicon carbide in 1HF/1K 2 S 2 O 8 solution has been proposed.

  6. Effect of phosphoric acid etching on the shear bond strength of two self-etch adhesives

    Science.gov (United States)

    SABATINI, Camila

    2013-01-01

    Objective: To evaluate the effect of optional phosphoric acid etching on the shear bond strength (SBS) of two self-etch adhesives to enamel and dentin. Material and Methods: Ninety-six bovine mandibular incisors were ground flat to obtain enamel and dentin substrates. A two-step self-etch adhesive (FL-Bond II) and a one-step self-etch adhesive (BeautiBond) were applied with and without a preliminary acid etching to both the enamel and dentin. The specimens were equally and randomly assigned to 4 groups per substrate (n=12) as follows: FL-Bond II etched; FL-Bond II un-etched; BeautiBond etched; BeautiBond un-etched. Composite cylinders (Filtek Z100) were bonded onto the treated tooth structure. The shear bond strength was evaluated after 24 hours of storage (37ºC, 100% humidity) with a testing machine (Ultra-tester) at a speed of 1 mm/min. The data was analyzed using a two-way ANOVA and post-hoc Tukey's test with a significance level of pself-etch adhesives evaluated while providing improvement on the enamel bond strength only for FL-Bond II. This suggests that the potential benefit that may be derived from an additional etching step with phosphoric acid does not justify the risk of adversely affecting the bond strength to dentin. PMID:23559113

  7. Modeling the characteristic etch morphologies along specific crystallographic orientations by anisotropic chemical etching

    Directory of Open Access Journals (Sweden)

    Kun-Dar Li

    2018-02-01

    Full Text Available To improve the advanced manufacturing technology for functional materials, a sophisticated control of chemical etching process is highly demanded, especially in the fields of environment and energy related applications. In this study, a phase-field-based model is utilized to investigate the etch morphologies influenced by the crystallographic characters during anisotropic chemical etching. Three types of etching modes are inspected theoretically, including the isotropic, and preferred oriented etchings. Owing to the specific etching behavior along the crystallographic directions, different characteristic surface structures are presented in the simulations, such as the pimple-like, pyramidal hillock and ridge-like morphologies. In addition, the processing parameters affecting the surface morphological formation and evolution are also examined systematically. According to the numerical results, the growth mechanism of surface morphology in a chemical etching is revealed distinctly. While the etching dynamics plays a dominant role on the surface formation, the characteristic surface morphologies corresponding to the preferred etching direction become more apparent. As the atomic diffusion turned into a determinative factor, a smoothened surface would appear, even under the anisotropic etching conditions. These simulation results provide fundamental information to enhance the development and application of anisotropic chemical etching techniques.

  8. Modeling the characteristic etch morphologies along specific crystallographic orientations by anisotropic chemical etching

    Science.gov (United States)

    Li, Kun-Dar; Miao, Jin-Ru

    2018-02-01

    To improve the advanced manufacturing technology for functional materials, a sophisticated control of chemical etching process is highly demanded, especially in the fields of environment and energy related applications. In this study, a phase-field-based model is utilized to investigate the etch morphologies influenced by the crystallographic characters during anisotropic chemical etching. Three types of etching modes are inspected theoretically, including the isotropic, and preferred oriented etchings. Owing to the specific etching behavior along the crystallographic directions, different characteristic surface structures are presented in the simulations, such as the pimple-like, pyramidal hillock and ridge-like morphologies. In addition, the processing parameters affecting the surface morphological formation and evolution are also examined systematically. According to the numerical results, the growth mechanism of surface morphology in a chemical etching is revealed distinctly. While the etching dynamics plays a dominant role on the surface formation, the characteristic surface morphologies corresponding to the preferred etching direction become more apparent. As the atomic diffusion turned into a determinative factor, a smoothened surface would appear, even under the anisotropic etching conditions. These simulation results provide fundamental information to enhance the development and application of anisotropic chemical etching techniques.

  9. Atomic Layer Etching of Silicon to Solve ARDE-Selectivity-Profile-Uniformity Trade-Offs

    Science.gov (United States)

    Wang, Mingmei; Ranjan, Alok; Ventzek, Peter; Koshiishi, Akira

    2014-10-01

    With shrinking critical dimensions, dry etch faces more and more challenges. Minimizing each of aspect ratio dependent etching (ARDE), bowing, undercut, selectivity, and within die uniformly across a wafer are met by trading off one requirement against another. At the root of the problem is that roles radical flux, ion flux and ion energy play may be both good and bad. Increasing one parameter helps meeting one requirement but hinders meeting the other. Self-limiting processes like atomic layer etching (ALE) promise a way to escape the problem of balancing trade-offs. ALE was realized in the mid-1990s but the industrial implementation has been slow. In recent years interest in ALE has revived. We present how ARDE, bowing/selectivity trade-offs may be overcome by varying radical/ion ratio, byproduct re-deposition. We overcome many of the practical implementation issues associated with ALE by precise passivation process control. The Monte Carlo Feature Profile Model (MCFPM) is used to illustrate realistic scenarios built around an Ar/Cl2 chemistry driven etch of Si masked by SiO2. We demonstrate that ALE can achieve zero ARDE and infinite selectivity. Profile control depends on careful management of the ion energies and angles. For ALE to be realized in production environment, tight control of IAD is a necessary. Experimental results are compared with simulation results to provide context to the work.

  10. Surface Roughening of Polystyrene and Poly(methyl methacrylate in Ar/O2 Plasma Etching

    Directory of Open Access Journals (Sweden)

    Amy E. Wendt

    2010-12-01

    Full Text Available Selectively plasma-etched polystyrene-block-poly(methyl methacrylate (PS-b-PMMA diblock copolymer masks present a promising alternative for subsequent nanoscale patterning of underlying films. Because mask roughness can be detrimental to pattern transfer, this study examines roughness formation, with a focus on the role of cross-linking, during plasma etching of PS and PMMA. Variables include ion bombardment energy, polymer molecular weight and etch gas mixture. Roughness data support a proposed model in which surface roughness is attributed to polymer aggregation associated with cross-linking induced by energetic ion bombardment. In this model, RMS roughness peaks when cross-linking rates are comparable to chain scissioning rates, and drop to negligible levels for either very low or very high rates of cross-linking. Aggregation is minimal for very low rates of cross-linking, while very high rates produce a continuous cross-linked surface layer with low roughness. Molecular weight shows a negligible effect on roughness, while the introduction of H and F atoms suppresses roughness, apparently by terminating dangling bonds. For PS etched in Ar/O2 plasmas, roughness decreases with increasing ion energy are tentatively attributed to the formation of a continuous cross-linked layer, while roughness increases with ion energy for PMMA are attributed to increases in cross-linking from negligible to moderate levels.

  11. Optimized Deep UV hardbake process for metal-free dry-etching of integrated optical devices

    NARCIS (Netherlands)

    Sengo, G.; Sengo, G.; van Wolferen, Hendricus A.G.M.; Worhoff, Kerstin; Driessen, A.

    Photostabilization is a widely used post lithographic resist treatment process, which allows hardening the resist profile in order to maintain critical dimensions and to increase selectivity in subsequent process steps such as reactive ion etching. In this paper we present the optimization of Deep

  12. Metal mask free dry-etching process for integrated optical devices applying highly photostabilized resist.

    NARCIS (Netherlands)

    Sengo, G.; Sengo, G.; van Wolferen, Hendricus A.G.M.; Worhoff, Kerstin; Driessen, A.; Koonen, A.M.J.; Leijtens, X.J.M.; van den Boom, H.P.A.; Verdurmen, E.J.M.; Molina Vazquez, J.

    2006-01-01

    Photostabilization is a widely used post lithographic resist treatment process, which allows to harden the resist profile in order to maintain critical dimensions and to increase selectivity in subsequent process steps such as reactive ion etching. In this paper we present the optimization of deep

  13. Obtaining porous silicon suitable for sensor technology using MacEtch nonelectrolytic etching

    Directory of Open Access Journals (Sweden)

    Iatsunskyi I. R.

    2013-12-01

    Full Text Available The author suggests to use the etching method MacEtch (metal-assisted chemical etching for production of micro- and nanostructures of porous silicon. The paper presents research results on the morphology structures obtained at different parameters of deposition and etching processes. The research has shown that, depending on the parameters of deposition of silver particles and silicon wafers etching, the obtained surface morphology may be different. There may be both individual crater-like pores and developed porous or macroporous surface. These results indicate that the MacEtch etching is a promising method for obtaining micro-porous silicon nanostructures suitable for effective use in gas sensors and biological object sensors.

  14. DREM: Infinite etch selectivity and optimized scallop size distribution with conventional photoresists in an adapted multiplexed Bosch DRIE process

    DEFF Research Database (Denmark)

    Chang, Bingdong; Leussink, Pele; Jensen, Flemming

    2018-01-01

    The quest to sculpture materials as small and deep as possible is an ongoing topic in micro- and nanofabrication. For this, the Bosch process has been widely used to achieve anisotropic silicon microstructures with high aspect ratio. Reactive ion etching (RIE) lag is a phenomenon in which etch ra...... periodic sidewall shaping. e.g., a sausage-chain-like feature is demonstrated with an almost perfect periodicity....

  15. Monte-Carlo modeling of excitation of the electron subsystem of ZnO and MgO in tracks of swift heavy ions

    International Nuclear Information System (INIS)

    Voronkov, R.A.; Rymzhanov, R.A.; Medvedev, N.A.; Volkov, A.E.

    2015-01-01

    Monte Carlo code TREKIS is applied to trace kinetics of excitation of the electron subsystem of ZnO and MgO after an impact of a swift heavy ion (SHI). The event-by-event simulations describe excitation of the electron subsystems by a penetrating SHI, spatial spreading of generated electrons and secondary electron cascades. Application of the complex dielectric function (CDF) formalism for calculation of the cross sections of charged particle interaction with a solid target allows to consider collective response of the target to perturbation, which arises from the spatial and temporal correlations in the target electrons ensemble. The method of CDF reconstruction from the experimental optical data is applied. Electron inelastic mean free paths calculated within the CDF formalism are in very good agreement with NIST database. SHI energy losses agree well with those from SRIM and CasP codes. The radial distributions of valence holes, core holes and delocalized electrons as well as their energy densities in SHI tracks are calculated. The analysis of these distributions is presented.

  16. Influence of the pH on molecular hydrogen primary yields in He{sup 2+} ion tracks in liquid water. A Monte Carlo study

    Energy Technology Data Exchange (ETDEWEB)

    Cobut, Vincent [Departement de Chimie, Universite de Cergy-Pontoise, 5 Mail Gay-Lussac, Neuville/Oise, 95031 Cergy-Pontoise Cedex (France)]. E-mail: vincent.cobut@chim.u-cergy.fr; Corbel, Catherine [CEA-Saclay, DSM/DRECAM/SCM/Laboratoire de Radiolyse, Bat. 546, Piece 5, 91191 Gif-sur-Yvette Cedex (France); Patau, Jean Paul [Faculte de Pharmacie, Universite Paul-Sabatier, 35 chemin des Maraichers, 31062 Toulouse Cedex 4 (France)

    2005-02-01

    Monte Carlo calculations are performed to investigate how the acidity of aqueous solutions at room temperature affects the molecular hydrogen (H{sub 2}) yield as a function of time in 20 MeV-He{sup 2+} ion track segments. For pH values varying from 1 to 13, the time dependence of the calculated yields is nearly independent of pH in the time range 10{sup -12}-10{sup -8} s and only weakly dependent in the time range 10{sup -8}-10{sup -6} s. To understand this behaviour, the kinetic mechanisms governing H{sub 2} formation are examined as a function of time. It is found that the main reactions responsible for the H{sub 2} yield as a function of time are strongly pH-dependent at low and high pH values. The pH-dependences of the reaction yields are however such that the variations in the yields compensate each other. This is why the time dependence of the H{sub 2} yield is only weakly pH-dependent.

  17. Etching and ellipsometry studies on CL-VPE grown GaN epilayer

    Directory of Open Access Journals (Sweden)

    Puviarasu P.

    2017-02-01

    Full Text Available The surface morphological characteristics of wet chemical etched GaN layers grown at different temperatures on (0 0 0 1 sapphire substrates by Chloride-Vapor Phase Epitaxy (Cl-VPE have been studied using optical microscope. Significant surface morphology changes have been observed in correlation to the growth temperature and etching time. Also optical properties of the as grown and high-energy silicon (Si ion irradiated gallium nitride (GaN epilayers were studied using monochromatic ellipsometry. The effect of ion fluences on the refractive index of the GaN has been investigated and it has been found to decrease with an increase of ion fluence. This decrease is attributed to irradiation-induced defects and polycrystallization which plays an important role in determining the optical properties of silicon (Si ion irradiated GaN layers.

  18. Conductometric determination of single pores in polyethyleneterephthalate irradiated by heavy ions

    CERN Document Server

    Oganesyan, V R; Dörschel, B; Hermsdorf, D; Trofimov, V V; Vetter, J

    2002-01-01

    Most of the previous works devoted to the problem of track formation processes did not pay enough attention to direct measurement of the appearance of every individual pore in an array of many pores induced by the irradiation of polymer films with ions. Such measurements are not easy to carry out due to the extremely high electric resistance in the moment of pore opening. In this work the analysis of films irradiated with low particle fluences up to 3.7 centre dot 10 sup 3 ions/cm sup 2 is described. Polyethyleneterephthalate (PET) Hostaphan with a thickness of 20 mu m was used. The samples were irradiated with Bi ions of 11.4 MeV/amu energy. Using optimized etching conditions and computer aided data evaluation, we obtained results, which are in good agreement with theoretical predictions and model calculations. The measured increase of conductivity beginning from the breakthrough of a single track up to the next pore opening in dependence on the etching time and the number of opened pores confirm the assumed...

  19. Conductometric Determination of Single Pores in Polyethyleneterephthalate Irradiated by Heavy Ions

    CERN Document Server

    Oganesyan, V R; Dörschel, B; Vetter, J E; Danziger, M; Hermsdorf, D

    2002-01-01

    Most of previous works devoted to the problem of track formation processes did not pay enough attention to direct measurement of the appearance of every individual pore in an array of many pores induced by the irradiation of polymer films with ions. Such measurements are not easy to carry out due to the extremely high electric resistance in the moment of pore opening. In this work the analysis of films irradiated with low particle fluences up to 3.7\\cdot 10^{3} ions/cm^2 is described. Polyethyleneterephthalate (PET) Hostaphan with a thickness of 20 m was used. The samples were irradiated with Bi ions of 11.4 MeV/amu energy. Using optimized etching conditions and computer aided data evaluation we obtained results, which are in good agreement with theoretical predictions and model calculations. The measured increase of conductivity beginning from the breakthrough of a single track up to the next pore opening in dependence on the etching time and the number of opened pores confirm the assumed model. Thus, the de...

  20. The interplay between surface charging and microscale roughness during plasma etching of polymeric substrates

    Science.gov (United States)

    Memos, George; Lidorikis, Elefterios; Kokkoris, George

    2018-02-01

    The surface roughness developed during plasma etching of polymeric substrates is critical for a variety of applications related to the wetting behavior and the interaction of surfaces with cells. Toward the understanding and, ultimately, the manipulation of plasma induced surface roughness, the interplay between surface charging and microscale roughness of polymeric substrates is investigated by a modeling framework consisting of a surface charging module, a surface etching model, and a profile evolution module. The evolution of initially rough profiles during plasma etching is calculated by taking into account as well as by neglecting charging. It is revealed, on the one hand, that the surface charging contributes to the suppression of root mean square roughness and, on the other hand, that the decrease of the surface roughness induces a decrease of the charging potential. The effect of charging on roughness is intense when the etching yield depends solely on the ion energy, and it is mitigated when the etching yield additionally depends on the angle of ion incidence. The charging time, i.e., the time required for reaching a steady state charging potential, is found to depend on the thickness of the polymeric substrate, and it is calculated in the order of milliseconds.

  1. Design of experiment characterization of microneedle fabrication processes based on dry silicon etching

    Science.gov (United States)

    Held, J.; Gaspar, J.; Ruther, P.; Hagner, M.; Cismak, A.; Heilmann, A.; Paul, O.

    2010-02-01

    This paper reports on the characterization of dry etching-based processes for the fabrication of silicon microneedles using a design of experiment (DoE) approach. The possibility of using such microneedles as protruding microelectrodes able to electroporate adherently growing cells and record intracellular potentials motivates the systematic analysis of the influence of etching parameters on the needle shape. Two processes are characterized: a fully isotropic etch process and a three-step etching approach. In the first case, the shape of the microneedles is defined by a single etch step. For the stepped method, the structures are realized using the following sequence: a first, isotropic step defines the tip; this is followed by anisotropic etching that increases the height of the needle; a final isotropic procedure thins the microneedle and sharpens its tip. From the various process parameters tested, it is concluded that the isotropic fabrication is influenced mostly by four process parameters, whereas six parameters dominantly govern the outcome of the stepped etching technique. The dependence of the needle shape on the etch mask diameter is also investigated. Microneedles with diameters down to the sub-micrometer range and heights below 10 µm are obtained. The experimental design is performed using the D-optimal method. The resulting geometry, i.e. heights, diameters and radii of curvature measured at different positions, is extracted from scanning electron micrographs of needle cross-sections obtained from cuts by focused ion beam. The process parameters are used as inputs and the geometry features of the microneedles as outputs for the analysis of the process.

  2. Design of experiment characterization of microneedle fabrication processes based on dry silicon etching

    International Nuclear Information System (INIS)

    Held, J; Gaspar, J; Ruther, P; Paul, O; Hagner, M; Cismak, A; Heilmann, A

    2010-01-01

    This paper reports on the characterization of dry etching-based processes for the fabrication of silicon microneedles using a design of experiment (DoE) approach. The possibility of using such microneedles as protruding microelectrodes able to electroporate adherently growing cells and record intracellular potentials motivates the systematic analysis of the influence of etching parameters on the needle shape. Two processes are characterized: a fully isotropic etch process and a three-step etching approach. In the first case, the shape of the microneedles is defined by a single etch step. For the stepped method, the structures are realized using the following sequence: a first, isotropic step defines the tip; this is followed by anisotropic etching that increases the height of the needle; a final isotropic procedure thins the microneedle and sharpens its tip. From the various process parameters tested, it is concluded that the isotropic fabrication is influenced mostly by four process parameters, whereas six parameters dominantly govern the outcome of the stepped etching technique. The dependence of the needle shape on the etch mask diameter is also investigated. Microneedles with diameters down to the sub-micrometer range and heights below 10 µm are obtained. The experimental design is performed using the D-optimal method. The resulting geometry, i.e. heights, diameters and radii of curvature measured at different positions, is extracted from scanning electron micrographs of needle cross-sections obtained from cuts by focused ion beam. The process parameters are used as inputs and the geometry features of the microneedles as outputs for the analysis of the process.

  3. A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF3/O2 and SF6/O2

    Directory of Open Access Journals (Sweden)

    Seon-Geun Oh

    2014-01-01

    Full Text Available The characteristics of the dry etching of SiNx:H thin films for display devices using SF6/O2 and NF3/O2 were investigated using a dual-frequency capacitively coupled plasma reactive ion etching (CCP-RIE system. The investigation was carried out by varying the RF power ratio (13.56 MHz/2 MHz, pressure, and gas flow ratio. For the SiNx:H film, the etch rates obtained using NF3/O2 were higher than those obtained using SF6/O2 under various process conditions. The relationships between the etch rates and the usual monitoring parameters—the optical emission spectroscopy (OES intensity of atomic fluorine (685.1 nm and 702.89 nm and the voltages VH and VL—were investigated. The OES intensity data indicated a correlation between the bulk plasma density and the atomic fluorine density. The etch rate was proportional to the product of the OES intensity of atomic fluorine (I(F and the square root of the voltages (Vh+Vl on the assumption that the velocity of the reactive fluorine was proportional to the square root of the voltages.

  4. New approach to increase the gas throughput through mica track microfilters by changing their pore structure

    International Nuclear Information System (INIS)

    Shi-lun Guo; Tress, G.; Vater, P.; Khan, E.U.; Dersch, R.; Plachky, M.; Brandt, R.; Khan, H.A.

    1986-01-01

    A new approach has been developed to increase the gas throughput of nuclear track microfilters by changing the structure of the etched channels. This can be achieved by reducing the pore length of the filters and by changing the etched channel to two open funnels with a short neck in-between. The mica track microfilters are etched with hot concentrated NaOH solution only. The bulk etch rate is found to be 100 A h -1 . The structure of the mica pores has been studied in detail with optical and scanning electron microscopes. We find that the etching behavior of mica is anisotropic in several directions. A ''funnel-neck-funnel'' structure has been formed in mica by etching in NaOH. The gas throughput increase has been calculated from the modified structure of the mica pore. (author)

  5. Helium ion distributions in a 4 kJ plasma focus device by 1 mm-thick large-size polycarbonate detectors

    Science.gov (United States)

    Sohrabi, M.; Habibi, M.; Ramezani, V.

    2014-11-01

    Helium ion beam profile, angular and iso-ion beam distributions in 4 kJ Amirkabir plasma focus (APF) device were effectively observed by the unaided eyes and studied in single 1 mm-thick large-diameter (20 cm) polycarbonate track detectors (PCTD). The PCTDs were processed by 50 Hz-HV electrochemical etching using a large-size ECE chamber. The results show that helium ions produced in the APF device have a ring-shaped angular distribution peaked at an angle of ∼ ± 60 ° with respect to the top of the anode. Some information on the helium ion energy and distributions is also provided. The method is highly effective for ion beam studies.

  6. Tridimensional morphology and kinetics of etch pit on the {l_brace}0 0 0 1{r_brace} plane of sapphire crystal

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Lunyong [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Sun Jianfei, E-mail: jfsun_hit@263.net [Center for Composite Materials, Harbin Institute of Technology, Harbin 150001 (China); Zuo Hongbo; Yuan Zhiyong [Center for Composite Materials, Harbin Institute of Technology, Harbin 150001 (China); Zhou Ji; Xing Dawei [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Han Jiecai [Center for Composite Materials, Harbin Institute of Technology, Harbin 150001 (China)

    2012-08-15

    The tridimensional morphology and etching kinetics of the etch pit on the C-{l_brace}0 0 0 1{r_brace} plane of sapphire crystal ({alpha}-Al{sub 2}O{sub 3}) in molten KOH were studied experimentally. It was shown that the etch pit takes on tridimensional morphologies with triangular symmetry same as the symmetric property of the sapphire crystal. Pits like centric and eccentric triangular pyramid as well as hexagonal pyramid were observed, but the latter is less in density. In-depth analyses show the side walls of the etch pits belong to the {l_brace}1 1{sup Macron} 0 2{sup Macron }{r_brace} family, and the triangular pit contains edges full composed by Al{sup 3+} ions on the etching surface so it is more stable than the hexagonal pit since its edges on the etching surface contains Al{sup 2+} ions. The etch pits developed in a manner of kinematic wave by the step moving with constant speed, which is controlled by the chemical reaction with activation energy of 96.6 kJ/mol between Al{sub 2}O{sub 3} and KOH. - Graphical abstract: Schematic showing the atomic configuration of the predicted side walls of regular triangular pyramid shaped etch pit on the C-{l_brace}0 0 0 1{r_brace} plane of sapphire crystal. Highlights: Black-Right-Pointing-Pointer Observed the tridimensional morphology of etch pits. Black-Right-Pointing-Pointer Figured out the atomic configuration origin of the etch pits. Black-Right-Pointing-Pointer Quantitatively determined the etch rates of the etch pits.

  7. Measurement of ion beam angular distribution at different helium gas pressures in a plasma focus device by large-area polycarbonate detectors

    Energy Technology Data Exchange (ETDEWEB)

    Sohrabi, M.; Habibi, M., E-mail: mortezahabibi@gmail.com; Ramezani, V. [Amirkabir University of Technology, Energy Engineering and Physics Department (Iran, Islamic Republic of)

    2017-02-15

    The paper presents an experimental study and analysis of full helium ion density angular distributions in a 4-kJ plasma focus device (PFD) at pressures of 10, 15, 25, and 30 mbar using large-area polycarbonate track detectors (PCTDs) (15-cm etchable diameter) processed by 50-Hz-HV electrochemical etching (ECE). Helium ion track distributions at different pressures, in particular, at the main axis of the PFD are presented. Maximum ion track density of ~4.4 × 10{sup 4} tracks/cm{sup 2} was obtained in the PCTD placed 6 cm from the anode. The ion distributions for all pressures applied are ring-shaped, which is possibly due to the hollow cylindrical copper anode used. The large-area PCTD processed by ECE proves, at the present state-of-theart, a superior method for direct observation and analysis of ion distributions at a glance with minimum efforts and time. Some observations of the ion density distributions at different pressures are reported and discussed.

  8. Track sensitivity and the surface roughness measurements of CR-39 with atomic force microscope

    CERN Document Server

    Yasuda, N; Amemiya, K; Takahashi, H; Kyan, A; Ogura, K

    1999-01-01

    Atomic Force Microscope (AFM) has been applied to evaluate the surface roughness and the track sensitivity of CR-39 track detector. We experimentally confirmed the inverse correlation between the track sensitivity and the roughness of the detector surface after etching. The surface of CR-39 (CR-39 doped with antioxidant (HARZLAS (TD-1)) and copolymer of CR-39/NIPAAm (TNF-1)) with high sensitivity becomes rough by the etching, while the pure CR-39 (BARYOTRAK) with low sensitivity keeps its original surface clarity even for the long etching.

  9. Dry Etch Black Silicon with Low Surface Damage: Effect of Low Capacitively Coupled Plasma Power

    DEFF Research Database (Denmark)

    Iandolo, Beniamino; Plakhotnyuk, Maksym; Gaudig, Maria

    2017-01-01

    Black silicon fabricated by reactive ion etch (RIE) is promising for integration into silicon solar cells thanks to its excellent light trapping ability. However, intensive ion bombardment during the RIE induces surface damage, which results in enhanced surface recombination velocity. Here, we pr...... carrier lifetime thanks to reduced ion energy. Surface passivation using atomic layer deposition of Al2O3 improves the effective lifetime to 7.5 ms and 0.8 ms for black silicon n- and p-type wafers, respectively.......Black silicon fabricated by reactive ion etch (RIE) is promising for integration into silicon solar cells thanks to its excellent light trapping ability. However, intensive ion bombardment during the RIE induces surface damage, which results in enhanced surface recombination velocity. Here, we...... present a RIE optimization leading to reduced surface damage while retaining excellent light trapping and low reflectivity. In particular, we demonstrate that the reduction of the capacitively coupled power during reactive ion etching preserves a reflectance below 1% and improves the effective minority...

  10. Ion beam modifications of defect sub-structure of calcite cleavages

    Indian Academy of Sciences (India)

    WINTEC

    (a) Optical micrograph of calcite cleavage chemically etched with propionic acid with water (1 : 100) (rhombic etch pits; time 30 s). Scanning electron micrographs of calcite cleavages chemically etched after ion bombardment with different ener- gies: (b) 100 KeV, (c) 120 KeV and (d) 140 KeV. connecting Keithley (Model ...

  11. Etch Defect Characterization and Reduction in Hard-Mask-Based Al Interconnect Etching

    International Nuclear Information System (INIS)

    Lee, H.J.; Hung, C.L.; Leng, C.H.; Lian, N.T.; Young, L.W.

    2009-01-01

    This paper identifies the defect adders, for example, post hard-mask etch residue, post metal etch residue, and blocked etch metal island and investigates the removal characteristics of these defects within the oxide-masked Al etching process sequence. Post hard-mask etch residue containing C atom is related to the hardening of photoresist after the conventional post-RIE ashing at 275 degree C. An in situ O 2 -based plasma ashing on RIE etcher was developed to prevent the photoresist hardening from the high-ashing temperature; followed wet stripping could successfully eliminate such hardened polymeric residue. Post metal etch residue was caused from the attack of the Al sidewall by Cl atoms, and too much CHF 3 addition in the Al main etch step passivated the surface of Al resulting in poor capability to remove the Al-containing residue. The lower addition of CHF 3 in the Al main etch step would benefit from the residue removal. One possibility of blocked etch metal island creating was due to the micro masking formed on the opening of Ti N during the hard-mask patterning. We report that an additional Ti N surface pretreatment with the Ar/CHF 3 /N 2 plasmas could reduce the impact of the micro masking residues on blocked metal etch.

  12. Particularization of alpha contamination using CR-39 track detectors

    Indian Academy of Sciences (India)

    each was sandwiched to be dried in desiccant paper. To obtain the track diameter distribution and track density, the etched detec- tors were read and measured using an automatic digital image analysis system. (LEICA), consisting of a DMRE optical microscope with 600× magnification, a. Pramana – J. Phys., Vol. 69, No.

  13. Particularization of alpha contamination using CR-39 track detectors

    Indian Academy of Sciences (India)

    parameters of etched alpha tracks measured under the microscope [1–4]. Solid state nuclear track detectors (SSNTDs) have been the subject of immense commercial and scientific interest. Since their discovery, SSNTDs have been inves- tigated by numerous researchers in a wide variety of applications [5]. On the other.

  14. Charged-particle track analysis, thermoluminescence and microcratering studies of lunar samples

    International Nuclear Information System (INIS)

    Durrani, S.A.

    1977-01-01

    Studies of lunar samples (from both Apollo and Luna missions) have been carried out, using track analysis and thermoluminescence (t.l.) techniques, with a view to shedding light on the radiation and temperature histories of the Moon. In addition, microcraters in lunar glasses have been studied in order to elucidate the cosmic-dust impact history of the lunar regolith. In tracks studies, the topics discussed include the stabilizing effect of the thermal annealing of fossil tracks due to the lunar temperature cycle; the 'radiation annealing' of fresh heavy-ion tracks by large doses of protons (to simulate the effect of lunar radiation-damage on track registration); and correction factors for the anisotropic etching of crystals which are required in reconstructing the exposure history of lunar grains. An abundance ratio of ca. (1.1 + 0.3) x 10 -3 has been obtained, by the differential annealing technique, for the nuclei beyond the iron group to those within that group in the cosmic rays incident on the Moon. The natural t.l. of lunar samples has been used to estimate their effective storage temperature and mean depth below the surface. The results of the study of natural and artificially produced microcraters have been studied. (author)

  15. Slab track

    OpenAIRE

    Golob, Tina

    2014-01-01

    The last 160 years has been mostly used conventional track with ballasted bed, sleepers and steel rail. Ensuring the high speed rail traffic, increasing railway track capacities, providing comfortable and safe ride as well as high reliability and availability railway track, has led to development of innovative systems for railway track. The so-called slab track was first built in 1972 and since then, they have developed many different slab track systems around the world. Slab track was also b...

  16. Nuclear track detector kit for use in teaching

    International Nuclear Information System (INIS)

    Medveczky, L.; Somogyi, G.

    1986-01-01

    By the use of solid state nuclear track detectors (SSNTDs) one may carry out several useful and impressive educational experiments and demonstrations to illustrate different phenomena when teaching of nuclear physics. Realizing this situation the authors have published, since 1970, reports on several experiments for teaching demonstrations. Based on the authors instructions, a factory in Hungary (TANFRT, National Manufacturers and Suppliers of School Equipment, Budapest) constructed a kit for the use of nuclear track detectors in teaching. The portable kit contains the following items: alpha-emitting weak sources, solid state nuclear track detectors (unirradiated, irradiated, unetched and etched sheets), simple tools for carrying out experiments (facilities for irradiation and etching, etc.), slides showing photos of typical etch-tracks of light and heavy nuclei, user manual. By the help of the kit both pupils and teachers can perform various useful experiments and/or demonstrations. (author)

  17. Self-assembled peptide nanotubes as an etching material for the rapid fabrication of silicon wires

    DEFF Research Database (Denmark)

    Larsen, Martin Benjamin Barbour Spanget; Andersen, Karsten Brandt; Svendsen, Winnie Edith

    2011-01-01

    This study has evaluated self-assembled peptide nanotubes (PNTS) and nanowires (PNWS) as etching mask materials for the rapid and low-cost fabrication of silicon wires using reactive ion etching (RIE). The self-assembled peptide structures were fabricated under mild conditions and positioned on c...... characterization by SEM and I-V measurements. Additionally, the fabricated silicon structures were functionalized with fluorescent molecules via a biotin-streptavidin interaction in order to probe their potential in the development of biosensing devices....

  18. Antireflective grassy surface on glass substrates with self-masked dry etching

    Science.gov (United States)

    Song, Young Min; Park, Gyeong Cheol; Kang, Eun Kyu; Yeo, Chan Il; Lee, Yong Tak

    2013-12-01

    Although recently developed bio-inspired nanostructures exhibit superior optic performance, their practical applications are limited due to cost issues. We present highly transparent glasses with grassy surface fabricated with self-masked dry etch process. Simultaneously generated nanoclusters during reactive ion etch process with simple gas mixture (i.e., CF4/O2) enables lithography-free, one-step nanostructure fabrication. The resulting grassy surfaces, composed of tapered subwavelength structures, exhibit antireflective (AR) properties in 300 to 1,800-nm wavelength ranges as well as improved hydrophilicity for antifogging. Rigorous coupled-wave analysis calculation provides design guidelines for AR surface on glass substrates.

  19. Activation energy of etching for CR-39 as a function of linear energy transfer of the incident particles

    CERN Document Server

    Awad, E M

    1999-01-01

    In this work, we have studied the effect of the radiation damage caused by the incident particles on the activation energy of etching for CR-39 samples. The damage produced by the incident particle is expressed in terms of the linear energy transfer (LET). CR-39 samples from American Acrylic were irradiated to three different LET particles. These are N (LET sub 2 sub 0 sub 0 = 20 KeV/mu m) as a light particle, Fe (LET sub 2 sub 0 sub 0 = 110 KeV/mu m) as a medium particle and fission fragments (ff) from a sup 2 sup 5 sup 2 Cf source as heavy particles. In general the bulk etch rate was calculated using the weight difference method and the track etch rate was determined using the track geometry at various temperatures (50-90 deg. C) and concentrations (4-9 N) of the NaOH etchant. The average activation energy E sub b related to the bulk etch rate v sub b was calculated from 1n v sub b vs. 1/T. The average activation energy E sub t related to the track etch rate v sub t was estimated from 1n v sub t vs. 1/T. It...

  20. Dry etching method for compound semiconductors

    Science.gov (United States)

    Shul, Randy J.; Constantine, Christopher

    1997-01-01

    A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.