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Sample records for etch detectors based

  1. Development of a reader for track etch detectors based on a commercially available slide scanner

    CERN Document Server

    Steele, J D; Tanner, R J; Bartlett, D T

    1999-01-01

    NRPB has operated a routine neutron personal dosimetry service based on the electrochemical etch of PADC elements since 1986. Since its inception it has used an automated reader based on a video camera and real time analysis. A new and more powerful replacement system has been developed using a commercially available photographic slide scanner. This permits a complete image of the dosemeter to be grabbed in a single scan, generating a 2592x3888 pixel file which is saved for subsequent analysis. This gives an effective pixel size of 10x10 mu m with an image of the entire dosemeter in one field of view. Custom written software subsequently analyses the image to assess the number of etched pits on the dosemeter and read the detector identification number (code). Batch scanning of up to 40 detectors is also possible using an autofeed attachment. The system can be used for electrochemically etched tracks for neutron detectors and chemically etched tracks for radon detectors.

  2. ICP etching for InAs-based InAs/GaAsSb superlattice long wavelength infrared detectors

    Science.gov (United States)

    Huang, Min; Chen, Jianxin; Xu, Jiajia; Wang, Fangfang; Xu, Zhicheng; He, Li

    2018-05-01

    In this work, we study and report the dry etching processes for InAs-based InAs/GaAsSb strain-free superlattice long wavelength infrared (LWIR) detectors. The proper etching parameters were first obtained through the parametric studies of Inductively Coupled Plasma (ICP) etching of both InAs and GaSb bulk materials in Cl2/N2 plasmas. Then an InAs-based InAs/GaAsSb superlattice LWIR detector with PπN structure was fabricated by using the optimized etching parameters. At 80 K, the detector exhibits a 100% cut-off wavelength of 12 μm and a responsivity of 1.5 A/W. Moreover, the dark current density of the device under a bias of -200 mV reaches 5.5 × 10-4 A/cm2, and the R0A is 15 Ω cm2. Our results pave the way towards InAs-based superlattice LWIR detectors with better performances.

  3. Method of plastic track detector electrochemical etching

    International Nuclear Information System (INIS)

    D'yakov, A.A.

    1984-01-01

    The review of studies dealing with the development of the method for the electro-chemical etching (ECE) of the plastic track detectors on the base of polyethy-leneterephthalate (PET) and polycarbonate (PC) is given. Physical essence of the method, basic parameters of the processes, applied equipment and methods of measurement automation are considered. The advantages of the method over the traditional chemical etching are pointed out. Recommendations on the detector operation modes when detecting fission fragments, α-particles and fast neutrons are given. The ECE method is based on the condition that during chemical etching the high-voltage sound frequency alternating electric field is applied to the detector. In this case the detector serves as an isolating layer betWeen two vessels with etching solution in which high-voltage electrode are submerged. At a fixed electric field potential higher (over than the threshold value) at the end of the etching track cone atree-like discharge spot arises. It is shown that when PET is used for fast neutron detection it is advisable to apply for ECE the PEW solution (15g KOH+40 g C 2 H 2 OH + 45g H 2 O) the field potential should constitute 30 kVxcm -1 at the freqUency of 9 kHz. In the case of fission fragment detection Using ECE and PC the following ECE conditions are recommended: 30% KOH etcher, field potential of 10 kVxcm -1 , 2-4 kHz frequency. It is concluded that the ECE method permits considerably eXtend the sphere of plastic track detector application for detecting ionizing particles,

  4. Dosimetry and microdosimetry using LET spectrometer based on the track-etch detector: radiotherapy Bremsstrahlung beam, onboard aircraft radiation field

    International Nuclear Information System (INIS)

    Jadrnickova, I.; Spurny, F.

    2006-01-01

    The spectrometer of linear energy transfer (Let) based on the chemically etched poly-allyl-diglycol-carbonate (P.A.D.C.) track-etch detector was developed several years ago in our institute. This Let spectrometer enables determining Let of particles approximately from 10 to 700 keV/μm. From the Let spectra, dose characteristics can be calculated. The contribution presents the Let spectra and other dosimetric characteristics obtained onboard a commercial aircraft during more than 6 months long exposure and in the 18 MV radiotherapy Bremsstrahlung beam. (authors)

  5. Future developments in etched track detectors for neutron dosimetry

    International Nuclear Information System (INIS)

    Tommasino, L.

    1987-01-01

    Many laboratories engaged in the field of personal neutron dosimetry are interested in developing better etching processes and improving the CR-39 detecting materials. To know how much effort must still be devoted to the development of etch track dosimetry, it is necessary to understand the advantages. limitations and degree of exploitation of the currently available techniques. So much has been learned about the chemical and electrochemical etching processes that an optimised combination of etching processes could make possible the elimination of many of the existing shortcomings. Limitations of etched track detectors for neutron dosimetry arise mainly because the registration occurs only on the detector surface. These damage type detectors are based on radiation induced chain scission processes in polymers, which result in hole-type tracks in solids. The converse approach, yet to be discovered, would be the development of cure-track detectors, where radiation induced cross linking between organic polymer chains could result in solid tracks in liquids. (author)

  6. A fast neutron spectrometer based on an electrochemically etched CR-39 detector with degrader and front radiator

    International Nuclear Information System (INIS)

    Matiullah; Durrani, S.A.

    1987-01-01

    In addition to having promising applications for the development of a fast-neutron dosemeter, electrochemically etched (ECE) CR-39 detectors also offer the possibility of energy-selective fast-neutron detection. This property stems basically from the fact that, to produce 'sparkable' trails in the polymeric detector subjected to ECE, the charged particle resulting from a neutron interaction must fall within a definite 'energy window'. The lower and upper limits of proton energies that can yield ECE spots in CR-39 have been experimentally determined to be ∼ 50 keV and ∼ 2.2 MeV under our processing conditions. To accomplish our objective, we have developed a technique based on ECE spot-density measurements in CR-39 detectors placed in conjuction with judiciously chosen thicknesses of a polyethylene radiator and a lead degrader. The optimum thicknesses of the radiator and the degrader, for a given neutron energy, are determined by computer calculations. (author)

  7. Model calculations for electrochemically etched neutron detectors

    International Nuclear Information System (INIS)

    Pitt, E.; Scharmann, A.; Werner, B.

    1988-01-01

    Electrochemical etching has been established as a common method for visualisation of nuclear tracks in solid state nuclear track detectors. Usually the Mason equation, which describes the amplification of the electrical field strength at the track tip, is used to explain the treeing effect of electrochemical etching. The yield of neutron-induced tracks from electrochemically etched CR-39 track detectors was investigated with respect to the electrical parameters. A linear dependence on the response from the macroscopic field strength was measured which could not be explained by the Mason equation. It was found that the reality of a recoil proton track in the detector does not fit the boundary conditions which are necessary when the Mason equation is used. An alternative model was introduced to describe the track and detector geometry in the case of a neutron track detector. The field strength at the track tip was estimated with this model and compared with the experimental data, yielding good agreement. (author)

  8. Single charged-particle damage to living cells: a new method based on track-etch detectors

    International Nuclear Information System (INIS)

    Durante, M.; Grossi, G.F.; Pugliese, M.; Manti, L.; Nappo, M.; Gialanella, G.

    1994-01-01

    Biological effects of ionizing radiation are usually expressed as a function of the absorbed dose. Low doses of high-LET radiation correspond to one or few particle traversals through the cell. In order to study the biological effectiveness of single charged particles, we have developed a new method based on solid state nuclear track detectors. Cells are seeded on mylar and a LR-115 film is stuck below the mylar base. After irradiation, the LR-115 film is etched and cells observed at a phase contrast microscope connected to a video camera and an image analyzer. In this way, it is possible to measure the number of traversals through the cell nucleus or cytoplasm. Coordinates of each cell on the microscope bench are saved. After incubation for about one week, cells are fixed and stained and the colonies observed at the microscope. The fate of each irradiated cell is therefore correlated to the number of traversals. We have tested this method with two different rodent embryo fibroblast cell lines, C3H 10T1/2 and V79, exposed to 3.2 MeV accelerated α-particles (LET =124 keV/μm). The studied endpoint was cell killing. Preliminary biological results suggest that few α-particle tracks in V79 hamster cells are sufficient to reduce surviving fraction. ((orig.))

  9. A passive radon dosimeter based on the combination of a track etch detector and activated charcoal

    CERN Document Server

    Deynse, A V; Poffijn, A

    1999-01-01

    The aim of this work is to test a combination of a Makrofol track detector with a new type of charcoal (Carboxen-564) to design a personal radon dosimeter. The intention is to use this dosimeter as a personal radon dosimeter to measure the monthly radon exposure in workplaces, especially when the occupancy is not exactly known. The proposed combination was exposed to low and high concentrations of radon in a large range of relative humidity (RH). For the optimal layer thickness, a charcoal bed of 2.2 mm, a specific track density of 5.1 tracks cm sup - sup 2 /kBq h m sup - sup 3 was obtained. For a monthly working exposure (170 h) at an average radon concentration of 100 Bq/m sup 3 , this means 87 tracks/cm sup 2 or 10 times the background of the Makrofol detector, with a statistical uncertainty of 15%.

  10. Determination of nuclear tracks parameters on sequentially etched PADC detectors

    Science.gov (United States)

    Horwacik, Tomasz; Bilski, Pawel; Koerner, Christine; Facius, Rainer; Berger, Thomas; Nowak, Tomasz; Reitz, Guenther; Olko, Pawel

    Polyallyl Diglycol Carbonate (PADC) detectors find many applications in radiation protection. One of them is the cosmic radiation dosimetry, where PADC detectors measure the linear energy transfer (LET) spectra of charged particles (from protons to heavy ions), supplementing TLD detectors in the role of passive dosemeter. Calibration exposures to ions of known LET are required to establish a relation between parameters of track observed on the detector and LET of particle creating this track. PADC TASTRAK nuclear track detectors were exposed to 12 C and 56 Fe ions of LET in H2 O between 10 and 544 keV/µm. The exposures took place at the Heavy Ion Medical Accelerator (HIMAC) in Chiba, Japan in the frame of the HIMAC research project "Space Radiation Dosimetry-Ground Based Verification of the MATROSHKA Facility" (20P-240). Detectors were etched in water solution of NaOH with three different temperatures and for various etching times to observe the appearance of etched tracks, the evolution of their parameters and the stability of the etching process. The applied etching times (and the solution's concentrations and temperatures) were: 48, 72, 96, 120 hours (6.25 N NaOH, 50 O C), 20, 40, 60, 80 hours (6.25 N NaOH, 60 O C) and 8, 12, 16, 20 hours (7N NaOH, 70 O C). The analysis of the detectors involved planimetric (2D) measurements of tracks' entrance ellipses and mechanical measurements of bulk layer thickness. Further track parameters, like angle of incidence, track length and etch rate ratio were then calculated. For certain tracks, results of planimetric measurements and calculations were also compared with results of optical track profile (3D) measurements, where not only the track's entrance ellipse but also the location of the track's tip could be directly measured. All these measurements have been performed with the 2D/3D measurement system at DLR. The collected data allow to create sets of V(LET in H2 O) calibration curves suitable for short, intermediate and

  11. Etching characteristics of a CR-39 track detector at room temperature in different etching solutions

    International Nuclear Information System (INIS)

    Dajko, G.

    1991-01-01

    Investigations were carried out to discover how the etching characteristics of CR-39 detectors change with varying conditions of the etching process. Measurements were made at room temperature in pure NaOH and KOH solutions; in different alcoholic KOH solutions (PEW solution, i.e. potassium hydroxide, ethyl alcohol, water); and in NaOH and KOH solutions containing different additives. The bulk etching rate of the detector (V B ) and the V (= V T /V B ) function, i.e. track to bulk etch rates ratio, for 6.1 MeV α-particles, were measured systematically. (author)

  12. An energy and direction independent fast neutron dosemeter based on electrochemically etched CR-39 nuclear track detectors

    International Nuclear Information System (INIS)

    James, K.; Matiullah; Durrani, S.A.

    1987-01-01

    A computer-based model is presented, which simulates the dose equivalent response of electrochemically etched CR-39 to fast neutrons of various energies and angles of incidence. Most previous calculations of the response of CR-39 have neglected the production of recoiling oxygen and carbon nuclei as well as α particles in the CR-39. We calculate that these 'heavy recoils' and α particles are the major source of electrochemically etchable tracks in bare CR-39 at neutron energies above approx. 2 MeV under typical etching conditions. Our calculations have been extended to predict the response of CR-39 used in conjunction with various combinations of polymeric front radiators and we have determined the radiator stack configuration with produces the most energy independent response. Again, the heavy recoils and α particles cannot be neglected and, for energies above approx. 2 MeV, these produce typically about 20% of the total response of our optimum stack. This type of fast neutron dosemeter is, however, strongly direction dependent. We have integrated the response over all appropriate angles to predict the dose equivalent response for two representative neutron fields, and we suggest a method for minimising the angular dependence. (author)

  13. A passive monitor for radon using electrochemical track etch detector

    International Nuclear Information System (INIS)

    Massera, G.E.; Hassib, G.M.; Piesch, E.

    1980-01-01

    A passive monitor for radon and its decay products based on the electrochemical etching (ECE) of α-particle tracks on Makrofol is described. The monitor has been constructed in such a way that radon and radon daughters attached to aerosols can easily pass through a chamber while dust, heavy particles and water droplets are collected outside. The decay products are accumulated on the bottom of the chamber and a Makrofol detector foil is fixed on the top to register alpha particles. The ECE condition was maintained to detect alpha particles coming mainly from radon daughters trapped on the bottom of the chamber. The response of the monitor was determined at different exposure conditions and compared with those of some active techniques such as working level meters. The merits of this system are low cost, good sensitivity, portability and reliable, unattended operation. (author)

  14. Influence of variation of etching conditions on the sensitivity of PADC detectors with a new evaluation method

    International Nuclear Information System (INIS)

    Fiechtner-Scharrer, A.; Mayer, S.; Boschung, M.; Whitelaw, A.

    2011-01-01

    At the Paul Scherrer Institut, a personal neutron dosimetry system based on chemically etched poly allyl diglycol carbonate (PADC) detectors and an automatic track counting (Autoscan 60) for neutron dose evaluations has been in routine use since 1998. Today, the hardware and the software of the Autoscan 60 are out of date, no spare components are available anymore and more sophisticated image-analysis systems are already developed. Therefore, a new evaluation system, the 'TASLIMAGE', was tested thoroughly in 2009 for linearity, reproducibility, influence of etching conditions and so forth, with the intention of replacing the Autoscan 60 in routine evaluations. The TASLIMAGE system is based on a microscope (high-quality Nikon optics) and an ultra-fast three-axis motorised control for scanning the detectors. In this paper, the TASLIMAGE system and its possibilities for neutron dose calculation are explained in more detail and the study of the influence of the variation of etching conditions on the sensitivity and background of the PADC detectors is described. The etching temperature and etching duration were varied, which showed that the etching conditions do not have a significant influence on the results of non-irradiated detectors. However, the sensitivity of irradiated detectors decreases by 5 % per 1 deg. C when increasing the etching temperature. For the variation of the etching duration, the influence on the sensitivity of irradiated detectors is less pronounced. (authors)

  15. Study of etching processes in the GEM detectors

    CERN Document Server

    Zavazieva, Darina

    2016-01-01

    Gaseous Electron Multiplier (GEM) detectors are known to operate stably at high gains and high particle fluxes. Though, at very high gains and fluxes it was observed that the insulating polyimide layer between the GEM electrodes gets etched, changing the original shape of the hole, and therefore varying the gain and the energy resolution of the detector. The idea of the project to observe degradation effect of the GEM foils during the Triple GEM detector operation in extreme conditions under X-ray radiation.

  16. Latent tracks in polymeric etched track detectors

    International Nuclear Information System (INIS)

    Yamauchi, Tomoya

    2013-01-01

    Track registration properties in polymeric track detectors, including Poly(allyl diglycol carbonate), Bispenol A polycarbonate, Poly(ethylen terephtarate), and Polyimide, have been investigated by means of Fourie transform Infararede FT-IR spectrometry. Chemical criterion on the track formation threshold has been proposes, in stead of the conventional physical track registration models. (author)

  17. Equipment for electrochemical etching of dielectric track detectors

    International Nuclear Information System (INIS)

    Turek, K.; Novak, M.

    1992-01-01

    The facility is designed for electrochemical etching of solid state track detectors, devised for thicknesses in excess of 200 μm as employed for direct detection of charged particles or neutrons. The device consists of a high-voltage a.c. supply for the electrodes and an assembly whose body consists of a flat tank, on the surface of which is formed a channel for feeding the heating and cooling media. The tank is covered by a gasket, an earthed metal plate for the detector, a mask with holes determining the shape of the etched area, and a pressure plate. The pressure plate is fitted with a system of holes for the etching solution. Needle-shaped high-voltage electrodes are accommodated in the holes of the mask. The underlying principle of the invention consists in the fact that a rubber pad with guide holes for the needle-shaped electrodes lies on the pressure plate. Each electrode is composed of a central tip and an outer jacket, separated by an insulating layer; connection is provided by a light emitting diode. (Z.S.). 2 figs

  18. A passive monitor for radon using electrochemical track etch detector

    International Nuclear Information System (INIS)

    Massera, G.E.; Hassib, G.M.; Piesch, E.

    1980-01-01

    A passive, inexpensive monitor for radon detection and dosimetry is described in detail. It consists of a Makrofoil track etch detector inside a diffusion chamber which is sealed by a fibreglass filter through which radon may diffuse while radon daughters and aerosols are retained on the surface of the filter. The α-particle tracks are revealed by etching the Makrofoil in KOH. The lower detection limit of the radon dosimeter is equivalent to a mean dose in the lung of 130 mrem. After an exposure period of 3 months, a mean radon concentration of 0.3 pCi/l can be detected. The instrument is intended for use in a study to measure the long-term radon exposure in buildings in West Germany. (UK)

  19. Radon Measurements in Egypt using passive etched track detectors. A Review

    Energy Technology Data Exchange (ETDEWEB)

    Gomaa, M A [National Network of Radiation Physics. Atomic Energy Authority (Egypt); Hussein, A S [Radiation Protection Department, Nuclear Power Plants Authority, (Egypt); El-Arabi, A M [Physics Department, Faculty of Science, South Valley University, Qena, (Egypt)

    2005-04-01

    Radon and its progeny may cause serious radiation harm to human health such as lung cancer and other types. Radon measurements based on alpha particles etched track detectors (LR-115, CR-39) are very attractive for assessment of radon exposure. This is due to their high sensitivity, low cost, easy to handle and retain a permanent record of data. Also these detectors can incorporate the effects of seasonal and diurnal fluctuation of radon activity concentrations due to physical, geological and meteorological factors. The present review is based mainly on the topic of passive etched track detectors for the measurements of radon in Egypt in the recent years. Published papers includes the measurements of radon in dwellings, working places, Cairo Metro stations, ancient Pharaonic places and uranium exploration galleries as well as assessment of radon in drinking water.

  20. Radon Measurements in Egypt using passive etched track detectors. A Review

    International Nuclear Information System (INIS)

    Gomaa, M.A.; Hussein, A.S.; El-Arabi, A.M.

    2005-01-01

    Radon and its progeny may cause serious radiation harm to human health such as lung cancer and other types. Radon measurements based on alpha particles etched track detectors (LR-115, CR-39) are very attractive for assessment of radon exposure. This is due to their high sensitivity, low cost, easy to handle and retain a permanent record of data. Also these detectors can incorporate the effects of seasonal and diurnal fluctuation of radon activity concentrations due to physical, geological and meteorological factors. The present review is based mainly on the topic of passive etched track detectors for the measurements of radon in Egypt in the recent years. Published papers includes the measurements of radon in dwellings, working places, Cairo Metro stations, ancient Pharaonic places and uranium exploration galleries as well as assessment of radon in drinking water

  1. Effect of track etch rate on geometric track characteristics for polymeric track detectors

    International Nuclear Information System (INIS)

    Abdel-Naby, A.A.; El-Akkad, F.A.

    2001-01-01

    Analysis of the variable track etch rate on geometric track characteristic for polymeric track detectors has been applied to the case of LR-155 II SSNTD. Spectrometric characteristics of low energy alpha particles response by the polymeric detector have been obtained. The track etching kinematics theory of development of minor diameter of the etched tracks has been applied. The calculations show that, for this type of detector, the energy dependence of the minor track diameter d is linear for small-etched removal layer h. The energy resolution gets better for higher etched removal layer

  2. Excimer laser beam profile recording based on electrochemical etched polycarbonate

    International Nuclear Information System (INIS)

    Parvin, P.; Jaleh, B.; Zangeneh, H.R.; Zamanipour, Z.; Davoud-Abadi, Gh.R.

    2008-01-01

    There is no polymeric detector used to register the beam profile of UV lasers. Here, a method is proposed for the measurement of intensive UV beam pattern of the excimer lasers based on the photoablated polycarbonate detector after coherent UV exposure and the subsequent electrochemical etching. UV laser induced defects in the form of self-microstructuring on polycarbonate are developed to replicate the spatial intensity distribution as a beam profiler

  3. Excimer laser beam profile recording based on electrochemical etched polycarbonate

    Energy Technology Data Exchange (ETDEWEB)

    Parvin, P. [Physics Department, Amirkabir University of Technology, P.O. Box 15875-4413, Hafez Ave, Tehran (Iran, Islamic Republic of); Laser Research Center, AEOI, P.O. Box 1165-8486, Tehran (Iran, Islamic Republic of)], E-mail: parvin@aut.ac.ir; Jaleh, B. [Physics Department, Bu-Ali Sina University, Postal Code 65174, Hamedan (Iran, Islamic Republic of); Zangeneh, H.R. [Physics Department, Amirkabir University of Technology, P.O. Box 15875-4413, Hafez Ave, Tehran (Iran, Islamic Republic of); Zamanipour, Z. [Laser Research Center, AEOI, P.O. Box 1165-8486, Tehran (Iran, Islamic Republic of); Davoud-Abadi, Gh.R. [Physics Department, Amirkabir University of Technology, P.O. Box 15875-4413, Hafez Ave, Tehran (Iran, Islamic Republic of)

    2008-08-15

    There is no polymeric detector used to register the beam profile of UV lasers. Here, a method is proposed for the measurement of intensive UV beam pattern of the excimer lasers based on the photoablated polycarbonate detector after coherent UV exposure and the subsequent electrochemical etching. UV laser induced defects in the form of self-microstructuring on polycarbonate are developed to replicate the spatial intensity distribution as a beam profiler.

  4. Gamma dosimetry with CR-39 etch track detector

    International Nuclear Information System (INIS)

    Matiullah; Dogar, A.H.; Ahmad, N.; Amin, M.; Kudo, Katsuhisa

    1999-01-01

    To preserve and improve the safety of food for commercial purposes, it is exposed to high gamma-ray doses. The gamma-ray doses used for this purpose range from 0.15 kGy to 50 kGy. At such high doses, the etching characteristics of CR-39 are severely affected. This property, therefore, can be used to develop a CR-39-based gamma dosimeter. In this context, systematic studies were carried out and the bulk etching rate was determined as a function of gamma-ray dose using different methods. (author)

  5. LET spectrometry with track etch detectors-Use in high-energy radiation fields

    International Nuclear Information System (INIS)

    Jadrnickova, I.; Spurny, F.

    2008-01-01

    For assessing the risk from ionizing radiation it is necessary to know not only the absorbed dose but also the quality of the radiation; radiation quality is connected with the physical quantity linear energy transfer (LET). One of the methods of determination of LET is based on chemically etched track detectors. This contribution concerns with a spectrometer of LET based on the track detectors and discusses some results obtained at: ·high-energy radiation reference field created at the SPS accelerator at CERN; and ·onboard of International Space Station where track-etch based LET spectrometer has been exposed 273 days during 'Matrjoshka - R' experiment. Results obtained are compared with the results of studies at some lower-energy neutron sources; some conclusions on the registrability of neutrons and the ability of this spectrometer to determine dose equivalent in high-energy radiation fields are formulated

  6. Thermal history-based etching

    Science.gov (United States)

    Simpson, John T.

    2017-11-28

    A method for adjusting an etchability of a first borosilicate glass by heating the first borosilicate glass; combining the first borosilicate glass with a second borosilicate glass to form a composite; and etching the composite with an etchant. A material having a protrusive phase and a recessive phase, where the protrusive phase protrudes from the recessive phase to form a plurality of nanoscale surface features, and where the protrusive phase and the recessive phase have the same composition.

  7. Thermal stability of dyed tracks and electrochemical etching sensitivity of some polymeric detectors

    International Nuclear Information System (INIS)

    Monnin, M.; Gourcy, J.; Somogyi, G.; Dajko, D.

    1980-01-01

    Recent results on the mechanism of the formation of tracks obtained by the dyed tracks technique are given and the thermal annealing of the detectors is used to demonstrate their ability to retain tracks under more severe conditions than by the etching technique. Electrochemical etching of polycarbonate and polyethylene terephthalate detectors is investigated both from the background and sensitivity points of view. The polyethylene terephthalate detector is shown to be well suited for low neutron flux measurements. (author)

  8. Neutron activation analysis of uranium by means of electrochemical etching of tracks in lawsan detectors

    International Nuclear Information System (INIS)

    Kim Son Chun; Chuburkov, Yu.T.; Zvara, I.I.

    1982-01-01

    The method of neutron activation analysis of uranium in natural and artificial materials using track lavsan detectors of fission fragments has been developed. The method of electrochemical etching (etching reagent NaOH) of fragment tracks in lavsan is improved. Using statistical method of experiment planning the equation, describing the dependence of diometer value of fission fragment tracks on parameters of etching process, is obtained. The analysis sensitivity is 10 - 7 g/g - 10 - 8 g/g

  9. Study on the etching conditions of polycarbonate detectors for particle analysis of safeguards environmental samples

    International Nuclear Information System (INIS)

    Iguchi, K.; Esaka, K.T.; Lee, C.G.; Inagawa, J.; Esaka, F.; Onodera, T.; Fukuyama, H.; Suzuki, D.; Sakurai, S.; Watanabe, K.; Usuda, S.

    2005-01-01

    The fission track technique was applied to the particle analysis for safeguards environmental samples to obtain information about the isotope ratio of nuclear materials in individual particles. To detect the particles containing nuclear material with high detection efficiency and less particle loss, the influence of uranium enrichments on etching conditions of a fission track detector made of polycarbonate was investigated. It was shown that the increase in uranium enrichment shortened the suitable etching time both for particle detection and for less particle loss. From the results obtained, it was suggested that the screening of the uranium particles according to the enrichment is possible by controlling the etching time of the detector

  10. Evaluation study between the chemical and electrochemical etching for solid state nuclear track detectors

    International Nuclear Information System (INIS)

    Ramos, S.; Espinosa, G.; Golzarri, J.I.

    1991-01-01

    Since there are several methods of etching in the solid state nuclear track detectors (SSNTD) it is necessary to know which gives the best results for a specific problem. The purpose of this work is to analyze and compare both the chemical etching and the electrochemical etching. The SSNTD has a preferential response to certain kinds of particles and energies, according to the material used as detector. On the other hand the efficiency is a function of the incidence angle of the radiation and some other parameters such as temperature, concentration and type of solvent used in the etching process, and the method used for the etching. Therefore, it is necessary to extend as much as possible our knowledge of such parameters in order to choose the more efficient one for a specific problem

  11. Some aspects of the etching behavior of cellulose nitrate as track detector

    International Nuclear Information System (INIS)

    Hildebrand, D.; Reitz, G.; Buecker, H.

    1976-01-01

    Experimental results are presented to support the hypothesis that the etching velocity in cellulose nitrate detectors is dependent on the local water content of the foil. The consequence is drawn that high concentrations (> 4.7 n) of the etching solution should not be used for high precision track etching. The possibility to vary the Vsub(t)/Vsub(b) ratio is reported to have a useful application in biological experiments. Further more an influence of etch products at low NaOH concentrations was found. The cellulose nitrate detectors used in this investigation are 250 μ sheets made by Daicel, Nippon (plasticized) and 100 μ sheets made by Kodak, France (Type CA 80-15, plasticized). No qualitative differences in the etching behaviour of these two materials were obtained regarding the reported investigations, although the differences are partly large regarding other features. (orig.) [de

  12. Enlarging the fission fragment tracks in glass detectors by etching in weak solutions of HF - a safe etchant

    International Nuclear Information System (INIS)

    Singh, V.P.; Sharma, A.P.

    1982-01-01

    The effect of etchant concentration and temperature on track revelation properties of soda glass detectors has been studied. Etch rate ratio, maximum observable diameter and the energy resolution of the fission fragment tracks of 252 Cf in glasses are increased when the samples are etched in 1.25 vol% HF as compared to higher concentrations of HF and other etching solutions. The critical angle of etching is found to decrease with decrease in etchant concentration. The activation energies for bulk etching and track etching have also been estimated. Better results were obtained by using lower etching temperatures. (author)

  13. Etch Defect Characterization and Reduction in Hard-Mask-Based Al Interconnect Etching

    International Nuclear Information System (INIS)

    Lee, H.J.; Hung, C.L.; Leng, C.H.; Lian, N.T.; Young, L.W.

    2009-01-01

    This paper identifies the defect adders, for example, post hard-mask etch residue, post metal etch residue, and blocked etch metal island and investigates the removal characteristics of these defects within the oxide-masked Al etching process sequence. Post hard-mask etch residue containing C atom is related to the hardening of photoresist after the conventional post-RIE ashing at 275 degree C. An in situ O 2 -based plasma ashing on RIE etcher was developed to prevent the photoresist hardening from the high-ashing temperature; followed wet stripping could successfully eliminate such hardened polymeric residue. Post metal etch residue was caused from the attack of the Al sidewall by Cl atoms, and too much CHF 3 addition in the Al main etch step passivated the surface of Al resulting in poor capability to remove the Al-containing residue. The lower addition of CHF 3 in the Al main etch step would benefit from the residue removal. One possibility of blocked etch metal island creating was due to the micro masking formed on the opening of Ti N during the hard-mask patterning. We report that an additional Ti N surface pretreatment with the Ar/CHF 3 /N 2 plasmas could reduce the impact of the micro masking residues on blocked metal etch.

  14. Vacuum effect on the etch induction time and registration sensitivity of polymer track detectors

    International Nuclear Information System (INIS)

    Csige, I.; Hunyadi, I.; Somogyi, G.

    1988-01-01

    The effect of a vacuum on etch induction time and track etch rate ratio of some polymer track detectors was studied systematically with alpha particles of different energies. It was found that the etch induction time increases, and the track etch rate ratio decreases, drastically when the detectors were irradiated in a vacuum and also kept in a vacuum for a few hours before and for a few minutes after the irradiation. These times proved to be characteristic for the outgassing of oxygen from the sheets and the stabilization of latent tracks, respectively. The role of oxygen in latent track formation is discussed. We have found that the vacuum effect is most significant near the surface. Its diminution with depth depends on the time of outgassing in accordance with the time variation of the dissolved oxygen concentration profile inside the sheets. (author)

  15. Vacuum effect on the etch induction time and registration sensitivity of polymer track detectors

    Energy Technology Data Exchange (ETDEWEB)

    Csige, I.; Hunyadi, I.; Somogyi, G. (Magyar Tudomanyos Akademia, Debrecen (Hungary). Atommag Kutato Intezete); Fujii, M. (Institute of Space and Astronautical Science, Sagamihara (Japan))

    1988-01-01

    The effect of a vacuum on etch induction time and track etch rate ratio of some polymer track detectors was studied systematically with alpha particles of different energies. It was found that the etch induction time increases, and the track etch rate ratio decreases, drastically when the detectors were irradiated in a vacuum and also kept in a vacuum for a few hours before and for a few minutes after the irradiation. These times proved to be characteristic for the outgassing of oxygen from the sheets and the stabilization of latent tracks, respectively. The role of oxygen in latent track formation is discussed. We have found that the vacuum effect is most significant near the surface. Its diminution with depth depends on the time of outgassing in accordance with the time variation of the dissolved oxygen concentration profile inside the sheets. (author).

  16. Development of a new approach to simulate a particle track under electrochemical etching in polymeric detectors

    International Nuclear Information System (INIS)

    Mostofizadeh, Ali; Huang, Yudong; Kardan, M. Reza; Babakhani, Asad; Sun Xiudong

    2012-01-01

    A numerical approach based on image processing was developed to simulate a particle track in a typical polymeric detector, e.g., polycarbonate, under electrochemical etching. The physical parameters such as applied voltage, detector thickness, track length, the radii of curvature at the tip of track, and the incidence angle of the particle were considered, and then the boundary condition of the problem was defined. A numerical method was developed to solve Laplace equation, and then the distribution of the applied voltage was obtained through the polymer volume. Subsequently, the electric field strengths in the detector elements were computed. In each step of the computation, an image processing technique was applied to convert the computed values to grayscale images. The results showed that a numerical solution to Laplace equation is dedicatedly an attractive approach to provide us the accurate values of electric field strength through the polymeric detector volume as well as the track area. According to the results, for a particular condition of the detector thickness equal to 445 μm, track length of 21 μm, the radii of 2.5 μm at track tip, the incidence angle of 90°, and the applied voltage of 2080 V, after computing Laplace equation for an extremely high population of 4000 × 4000 elements of detector, the average field strength at the tip of track was computed equal to 0.31 MV cm −1 which is in the range of dielectric strength for polymers. The results by our computation confirm Smythe’s model for estimating the ECE-tracks.

  17. Track-etched detectors for the dosimetry of the radiation of cosmic origin

    International Nuclear Information System (INIS)

    Spurny, F.; Turek, K.

    2004-01-01

    Cosmic rays contribute to the exposure on the Earth's surface as well as in its surroundings. At the surface and/or at aviation altitudes, there are mostly secondary particles created through the cosmic rays interaction in the atmosphere, which contribute to this type of exposure. Onboard a spacecraft, the exposure comes mostly from primary cosmic rays. Track-etched detectors (TED) are able to characterise both these types of exposure. The contribution of neutrons, of cosmic origin, on the Earth's surface was studied at altitudes from few hundreds to 3000 m using TED in a moderator sphere. The results obtained are compared with other data on this type of natural radiation background. The results of studies performed onboard aircraft and/or spacecraft are presented afterwards. We used TED-based neutron dosemeter, as well as a spectrometer of linear energy transfer based on a chemically etched TED. The results of studies performed onboard aircraft, as well as spacecraft, are presented and discussed, including an attempt to estimate a neutron component onboard the spacecraft. It was found that they correlate with the results of other independent investigations. (authors)

  18. Bulk etching characteristics of CR-39 track detectors in hydroxide solutions

    International Nuclear Information System (INIS)

    Fonseca, E.S. da; Knoefel, T.M.J.; Tavares, O.A.P.

    1983-01-01

    A systematic study of the bulk etch rate of CR-39 track detectors in KOH and NaOH aqueous solutions is presented. A number of unirradiated and non-thermally treated CR-39 samples were chemically attacked in KOH and NaOH solutions of concentration and temperature in the range 2-10 N and 50-90 0 C, respectively. From measurements of the thickness of layers removed as a function of the etching time, the bulk etch rate υ β and the induction time T ο for surface removal were obtained for each etching condition. For both NaOH and KOH solution the activation energy of the process was derived as E = 0.76 ± 0.05 eV. It was observed that the induction time decreases both with increasing normality and temperature of the solution. (author) [pt

  19. Optimization of microwave-induced chemical etching for rapid development of neutron-induced recoil tracks in CR-39 detectors

    International Nuclear Information System (INIS)

    Sahoo, G.S.; Tripathy, S.P.; Bandyopadhyay, T.

    2014-01-01

    A systematic investigation is carried out to optimize the recently established microwave-induced chemical etching (MICE) parameters for rapid development of neutron-induced recoil tracks in CR-39 detectors. Several combinations of all available microwave powers with different etching durations were analysed to determine the most suitable etching condition. The etching duration was found to reduce with increasing microwave power and the tracks were observed at about 18, 15, 12, and 6 min for 300, 450, 600 and 900 W of microwave powers respectively compared to a few hours in chemical etching (CE) method. However, for complete development of tracks the etching duration of 30, 40, 50 and 60 min were found to be suitable for the microwave powers of 900, 600, 450 and 300 W, respectively. Temperature profiles of the etchant for all the available microwave powers at different etching durations were generated to regulate the etching process in a controlled manner. The bulk etch rates at different microwave powers were determined by 2 methods, viz., gravimetric and removed thickness methods. A logarithmic expression was used to fit the variation of bulk etch rate with microwave power. Neutron detection efficiencies were obtained for all the cases and the results on track parameters obtained with MICE technique were compared with those obtained from another detector processed with chemical etching. - Highlights: • Microwave-induced chemical etching method is optimized for rapid development of recoil tracks due to neutrons in CR-39 detector. • Several combinations of microwave powers and etching durations are investigated to standardize the suitable etching condition. • Bulk-etch rates are determined for all microwave powers by two different methods, viz. gravimetric and removed thickness method. • The method is found to be simple, effective and much faster compared to conventional chemical etching

  20. Optimize Etching Based Single Mode Fiber Optic Temperature Sensor

    OpenAIRE

    Ajay Kumar; Dr. Pramod Kumar

    2014-01-01

    This paper presents a description of etching process for fabrication single mode optical fiber sensors. The process of fabrication demonstrates an optimized etching based method to fabricate single mode fiber (SMF) optic sensors in specified constant time and temperature. We propose a single mode optical fiber based temperature sensor, where the temperature sensing region is obtained by etching its cladding diameter over small length to a critical value. It is observed that th...

  1. CONTRIBUTION OF DIFFERENT PARTICLES MEASURED WITH TRACK ETCHED DETECTORS ONBOARD ISS.

    Science.gov (United States)

    Ambrožová, I; Davídková, M; Brabcová, K Pachnerová; Tolochek, R V; Shurshakov, V A

    2017-09-29

    Cosmic radiation consists of primary high-energy galactic and solar particles. When passing through spacecraft walls and astronauts' bodies, the spectrum becomes even more complex due to generating of secondary particles through fragmentation and nuclear interactions. Total radiation exposure is contributed by both these components. With an advantage, space research uses track etched detectors from the group of passive detectors visualizing the tracks of particles, in this case by etching. The detectors can discriminate between various components of cosmic radiation. A method is introduced for the separation of the different types of particles according to their range using track etched detectors. The method is demonstrated using detectors placed in Russian segment of the International Space Station in 2009. It is shown that the primary high-energy heavy ions with long range contribute up to 56% of the absorbed dose and up to 50% to the dose equivalent. © The Author 2017. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  2. Surface Passivation of CdZnTe Detector by Hydrogen Peroxide Solution Etching

    Science.gov (United States)

    Hayes, M.; Chen, H.; Chattopadhyay, K.; Burger, A.; James, R. B.

    1998-01-01

    The spectral resolution of room temperature nuclear radiation detectors such as CdZnTe is usually limited by the presence of conducting surface species that increase the surface leakage current. Studies have shown that the leakage current can be reduced by proper surface preparation. In this study, we try to optimize the performance of CdZnTe detector by etching the detector with hydrogen peroxide solution as function of concentration and etching time. The passivation effect that hydrogen peroxide introduces have been investigated by current-voltage (I-V) measurement on both parallel strips and metal-semiconductor-metal configurations. The improvements on the spectral response of Fe-55 and 241Am due to hydrogen peroxide treatment are presented and discussed.

  3. Image formation in track-etch detectors: Pt. 4

    International Nuclear Information System (INIS)

    Ilic, Radomir; Najzer, Mitja

    1990-01-01

    The radiographic performance of solid state nuclear track detectors was analysed with respect to image quality. Image quality is expressed in terms of three image quality factors: contrast or gradient of the detector, image unsharpness and detail discernment. Equations for the image quality factors were derived from the radiographic transfer function, taking into account image inhomogeneity caused by statistical fluctuations of track density. To find optimal radiographic conditions for a given application, a single quantity called the figure of radiographic merit was defined. It is expressed as the weighted product of the image quality factors. It was found that optimum image quality of a balanced image, characterized by equal importance of all three image quality factors, is obtained at an exposure value (defined as the product of the average visible track area and track density) of unity. (author)

  4. Study etching characteristics of a track detector CR-39 with ultraviolet laser irradiation

    International Nuclear Information System (INIS)

    Dwaikat, Nidal; Iida, Toshiyuki; Sato, Fuminobu; Kato, Yushi; Ishikawa, Ippei; Kada, Wataru; Kishi, Atsuya; Sakai, Makoto; Ihara, Yohei

    2007-01-01

    The effect of pulsed ultraviolet Indium-doped Yttrium Aluminum Garnet (UV-In:YAG) laser of λ=266 nm, pulse energy 42 mJ/pulse at repetition rate10 Hz on the etching characteristics of Japanese CR-39 was studied at various energy intensities. Fifteen detectors were divided into two sets, each of seven samples and one sample was kept as a reference.The first set (post-exposed) was first exposed to alpha radiation with close contact to 241 Am and then treated in air with laser in the energy intensity range from 40 to160 J/cm 2 , 20 J/cm 2 in step. The second set (pre-exposed) was irradiated in reverse process (laser+alpha) with the same sources as the first set and under the same condition. The laser energy intensities ranged between 20 and 140 J/cm 2 , 20 J/cm 2 in step. For post-exposed samples (alpha+laser) bulk etch rate decreases up to 60 J/cm 2 and increases thereafter, while for pre-exposed samples (laser+alpha) the bulk etch rate oscillates without showing any precise periodicity. The bulk etch rate for both sets was found to be the same at 60≤energy intensity≤80 J/cm 2 and this may indicate that the same structural changes have happened. The track etch rate was found to be equal to the bulk etch rate for both sets, so the sensitivity is constant. In both sets several changes on the detector surfaces: tracks of different sizes and shapes and high density within the laser spot were observed. Out of the laser spot, the tracks become larger and lower density, indicating cross-linking and scission have happened, simultaneously, on the same surface as a result of UV-laser irradiation

  5. Etching Properties of Poly ethyleneterephthalate (PET) Melinex-E Nuclear Track Detectors (NTDs)

    International Nuclear Information System (INIS)

    Ghanim, E.H.; Hussein, A.; El-samman, H.M.; Tretyakova, S.P.

    2009-01-01

    One of the main parameters that control track formation is the bulk etch rate, VB. The dependence of VB on etchant concentrations and temperatures was extensively carried out. It is found that, VB of the PET Melinex-E (C 10 H 8 O 4 ) depends upon the etchant temperature T through an Arrhenius equation. While, the dependence of VB on the etchant concentration; C followed the relation VB = A C n. The activation energy of etching, Eb, for the studied Melinex-E detector was calculated. An average value of Eb = 0.83 ± 0.03 eV was extracted. The variation of, VB, of PET with etching duration was studied and compared with that of CR-39 plastic at certain etching temperature; T e =60 degree C and at different etchant concentrations. The irradiation facilities were performed with the 252 Cf fission fragments and 129 Xe +8 (θi =π/2). Results of these studies were discussed in the frame work of nuclear track formation and etching theories

  6. Track etch parameters and annealing kinetics assessment of protons of low energy in CR-39 detector

    International Nuclear Information System (INIS)

    Jain, R.K.; Kumar, Ashok; Singh, B.K.

    2012-01-01

    Highlights: ► We calibrate CR-39 detector with very low energy protons. ► We establish linear relationship between track diameter and time/energy up to 200 keV. ► We determine activation energy of annealing using different models. ► We justify concept of single annealing activation energy in CR-39. - Abstract: In this paper threshold of the registration sensitivity of very low energy proton in CR-39 is investigated. Irradiation of CR-39 (poly-allyl-diglycol carbonate) was carried out with very low energy mono energetic protons of 20–60 keV from a mini proton accelerator. Nearly 10 4 /cm 2 fluence of protons was used. The variation of track diameter with etching time as well as proton energy response curve was carefully calibrated. The bulk and track etch rates were measured by using proton track diameters. Bulk etch rate was also measured by the thickness of removed surface layer. The thermal annealing of proton track at temperatures ranging from 100 to 200 °C in CR-39 was studied by several models. Activation energy of annealed CR-39 detectors was calculated by slope of track etch rate and temperature plot. The data of proton tracks of 200, 250 and 300 keV from 400 kV Van-de-Graaff accelerator was also used and compared with the track diameters of different energies of proton.

  7. Vertically etched silicon nano-rods as a sensitive electron detector

    International Nuclear Information System (INIS)

    Hajmirzaheydarali, M; Akbari, M; Soleimani-Amiri, S; Sadeghipari, M; Shahsafi, A; Akhavan Farahani, A; Mohajerzadeh, S

    2015-01-01

    We have used vertically etched silicon nano-rods to realize electron detectors suitable for scanning electron microscopes. The results of deep etching of silicon nano-structures are presented to achieve highly ordered arrays of nano-rods. The response of the electron detector to energy of the primary electron beam and the effects of various sizes and materials has been investigated, indicating its high sensitivity to secondary and back-scattered electrons. The miniaturized structure of this electron detector allows it to be placed in the vicinity of the specimen to improve the resolution and contrast. This detector collects electrons and converts the electron current to voltage directly by means of n-doped silicon nano-rods on a p-type silicon substrate. Silicon nano-rods enhance the surface-to-volume ratio of the detector as well as improving the yield of electron detection. The use of nano-structures and silicon nanowires as an electron detector has led to higher sensitivities than with micro-structures. (paper)

  8. Cosmic radiation dose in aircraft - a neutron track etch detector

    Energy Technology Data Exchange (ETDEWEB)

    Vukovic, B.; Radolic, V.; Miklavcic, I.; Poje, M.; Varga, M. [Department of Physics, University of Osijek, 31000 Osijek, P.O. Box 125, Gajev trg 6 (Croatia); Planinic, J. [Department of Physics, University of Osijek, 31000 Osijek, P.O. Box 125, Gajev trg 6 (Croatia)], E-mail: planinic@ffos.hr

    2007-12-15

    Cosmic radiation bombards us at high altitude by ionizing particles. The radiation environment is a complex mixture of charged particles of solar and galactic origin, as well as of secondary particles produced in interaction of the galactic cosmic particles with the nuclei of atmosphere of the Earth. The radiation field at aircraft altitude consists of different types of particles, mainly photons, electrons, positrons and neutrons, with a large energy range. The non-neutron component of cosmic radiation dose aboard ATR 42 and A 320 aircrafts (flight level of 8 and 11 km, respectively) was measured with TLD-100 (LiF:Mg,Ti) detectors and the Mini 6100 semiconductor dosimeter. The estimated occupational effective dose for the aircraft crew (A 320) working 500 h per year was 1.64 mSv. Other experiments, or dose rate measurements with the neutron dosimeter, consisting of LR-115 track detector and boron foil BN-1 or 10B converter, were performed on five intercontinental flights. Comparison of the dose rates of the non-neutron component (low LET) and the neutron one (high LET) of the radiation field at the aircraft flight level showed that the neutron component carried about 50% of the total dose. The dose rate measurements on the flights from the Middle Europe to the South and Middle America, then to Korea and Japan, showed that the flights over or near the equator region carried less dose rate; this was in accordance with the known geomagnetic latitude effect.

  9. Cosmic radiation dose in aircraft - a neutron track etch detector

    International Nuclear Information System (INIS)

    Vukovic, B.; Radolic, V.; Miklavcic, I.; Poje, M.; Varga, M.; Planinic, J.

    2007-01-01

    Cosmic radiation bombards us at high altitude by ionizing particles. The radiation environment is a complex mixture of charged particles of solar and galactic origin, as well as of secondary particles produced in interaction of the galactic cosmic particles with the nuclei of atmosphere of the Earth. The radiation field at aircraft altitude consists of different types of particles, mainly photons, electrons, positrons and neutrons, with a large energy range. The non-neutron component of cosmic radiation dose aboard ATR 42 and A 320 aircrafts (flight level of 8 and 11 km, respectively) was measured with TLD-100 (LiF:Mg,Ti) detectors and the Mini 6100 semiconductor dosimeter. The estimated occupational effective dose for the aircraft crew (A 320) working 500 h per year was 1.64 mSv. Other experiments, or dose rate measurements with the neutron dosimeter, consisting of LR-115 track detector and boron foil BN-1 or 10B converter, were performed on five intercontinental flights. Comparison of the dose rates of the non-neutron component (low LET) and the neutron one (high LET) of the radiation field at the aircraft flight level showed that the neutron component carried about 50% of the total dose. The dose rate measurements on the flights from the Middle Europe to the South and Middle America, then to Korea and Japan, showed that the flights over or near the equator region carried less dose rate; this was in accordance with the known geomagnetic latitude effect

  10. Personal neutron monitoring using TLD albedo combined with etched tracks detector

    Energy Technology Data Exchange (ETDEWEB)

    Tsujimura, N.; Momose, T. [Japan Nuclear Cycle Development Institute, Ibarakiken (Japan)

    2002-07-01

    The albedo dosimetry has been carried out in personal neutron monitoring in the MOX fuel plant of JNC Tokai Works, however, it has shortcomings mainly due to the inherently poor energy response. This paper describes our efforts to overcome these difficulties in practical use of albedo dosemeters. The following four subjects are presented: (1) the neutron energy response functions of albedo TLD obtained from the mono-energetic neutron irradiation experiments and the Monte-Carlo calculations, (2) the location- dependent correction factors calculated from the response functions and neutron energy spectra measured in the workplaces, (3) the results of the international personal neutron dosimetry intercomparison program, and (4) the operational comparison program of TLD albedo and etched tracks detector worn by workers engaged in the fabrication process of the MOX fuel plant. Finally, the characteristics of the combination neutron dosemeter using TLD albedo and solid state etched track detector are summarized.

  11. Track-etched detectors for the dosimetry of the radiation of cosmic origin

    Czech Academy of Sciences Publication Activity Database

    Spurný, František; Turek, Karel

    2004-01-01

    Roč. 109, č. 4 (2004), s. 375-381 ISSN 0144-8420 R&D Projects: GA AV ČR KSK4055109 Grant - others:EC project(XE) FIGM-CT2000-00068 Institutional research plan: CEZ:AV0Z1048901 Keywords : track-etched detectors * cosmic rays * aircraft Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 0.617, year: 2003

  12. Identification of charged particles by etching the solid state nuclear track detectors in successive intervals

    International Nuclear Information System (INIS)

    Randhawa, G.S.; Virk, H.S.

    1997-01-01

    The suitability of the method of charged particle identification by etching the samples in successive intervals developed by Grabez et al. has been checked in CR-39 exposed to heavy ions 238 U, 208 Pb, 197 Au and 132 Xe in the interval 11.0 to 17.0 MeV/u. A similar study has been made on soda glass detectors irradiated by 238 U, 132 Xe, 56 Fe and 48 Ti ions having energy 4.0 to 6.0 MeV/u. It is concluded that this method of particle identification can be used successfully in CR-39 and soda glass detectors. (author)

  13. Radon measurements by etched track detectors applications in radiation protection, earth sciences and the environment

    CERN Document Server

    Durrani, Saeed A

    1997-01-01

    Exposure to radon gas, which is present in the environment naturally, constitutes over half the radiation dose received by the general public annually. At present, the most widely used method of measuring radon concentration levels throughout the world, both in dwellings and in the field, is by etched track detectors - also known as Solid State Nuclear Detectors (SSNTDs). Although this is not only the most widely used method but is also the simplest and the cheapest, yet there is at present no book available on the market globally, devoted exclusively or largely to the methodology of, and deal

  14. Track etch and thermo luminescent detectors response to high energy charged particles

    Czech Academy of Sciences Publication Activity Database

    Spurný, František; Jadrníčková, Iva

    2008-01-01

    Roč. 43, Supp. 1 (2008), S169-S173 ISSN 1350-4487. [International Conference on Solids /23./. Beijing, 11.09.2006-15.09.2006] R&D Projects: GA ČR GA202/04/0795 Grant - others:Evropské společenství(XE) ILSRA - 2004 - 248 Institutional research plan: CEZ:AV0Z10480505 Keywords : track etch detector * thermoluminescent detectors * LET spectrometry Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.267, year: 2008

  15. Track etch detectors with air gap for measurements of radon in soil

    Energy Technology Data Exchange (ETDEWEB)

    Turek, K; Bednar, J [Czech Academy of Sciences, 18086 Prague (Czech Republic). Nuclear Research Inst., Dept. of Radiation Dosimetry; Neznal, M [Radon Corp., 28922 Lysa nad Labem (Czech Republic)

    1996-12-31

    The main aim of this study was to develop a method of radon concentration measurements in soil using track etch detectors without cups. Our approach enables to minimize the detector dimensions resulting into smaller diameter of drilled holes, more rigid construction, easier handling and mailing, lower consumption of material and consequently in lower costs. The parallel arrangement of two track etch detectors in the open metallic holder seems to be promising as the complementary method to the commonly used cup-technique for radon measurement. The firmness, simple and compact construction, small size as well as low costs could be successfully utilized mainly in field measurement. The possibility of a variable sensitivity by the distance between the detectors makes the system versatile for many applications, 2 detectors with different h can practically exclude of under- or overexposure. The more precise calibrations including exposures in radon-chamber and study of an eventual influence of humidity are supposed to be done in the nearest future. (J.K) 2 tabs.

  16. Measurement of radon and thoron present in the environment using nuclear track etch detector technique

    International Nuclear Information System (INIS)

    Ramachandran, T.V.; Lalit, B.Y.; Mishra, U.C.

    1986-01-01

    The use of solid state nuclear track detectors (SSNTD) is one of the most convenient techniques to assess the average radiation levels of alpha activities in the environment. This technique has been used to assess the radon and thoron concentrations in some high background areas of South India and underground non-uranium mines in Bihar State. Exposed SSNTD films are chemically etched in an alkali solution and the alpha tracks are evaluated under an optical microscope. The detailed procedure for this study and the calibration of the etched films for conversion of alpha track density to radon and thoron concentrations in pCi l -1 are given in this paper. It was found that 1.9 tracks cm -2 day -1 and 6.2 tracks cm -2 day -1 were produced by exposing the LR-115 foils to 1 pCi l -1 of thoron and radon respectively. (author)

  17. Radiation dosimetry for microbial experiments in the International Space Station using different etched track and luminescent detectors

    Czech Academy of Sciences Publication Activity Database

    Goossens, O.; Vanhavere, F.; Leys, N.; De Boever, P.; O'Sullivan, D.; Zhou, D.; Spurný, František; Yukihara, E.; Gaza, R.; McKeever, S.

    2006-01-01

    Roč. 120, 1- 4 (2006), s. 433-437 ISSN 0144-8420 R&D Projects: GA MŠk 1P05OC032 Institutional research plan: CEZ:AV0Z10480505 Keywords : bacteria l experiments * space flight * etched track detectors * thermoluminescent detectors Subject RIV: DN - Health Impact of the Environment Quality Impact factor: 0.446, year: 2006

  18. A new parameter in the electrochemical etching of polymer track detectors

    International Nuclear Information System (INIS)

    Sohrabi, M.; Katouzi, M.

    1993-01-01

    It was discovered that the pressure applied to the electrochemical etching (ECE) chamber system and in turn to washers holding the detector tight in place between two semi-chambers has a direct effect on the internal heating and time to breakdown of the polymer detector. The effect was found to be dependent on the type, material, shape and size of the washers holding the detector in place under pressure. To verify such parameters, a pressure ECE chamber (PECE) with measurable and reproducible pressure was designed and constructed. Three types of rubber washers, such as ''O'' rings, flat rings and sheets as well as polycarbonate (PC) detectors glued directly between two semi-syringes, were used. Flat rubber sheets were shown to have relatively minor effects on the internal heating rate and are recommended. The effect seems to be due to forced vibrations of the detector under an electric field, the frequency of which depends on the degree to which the detector is stretched under pressure, like winding the strings of a musical instrument. The results of the above studies are presented and discussed. (orig.)

  19. Effect of various etching conditions on the response of Cr-39 plastic track detector applied for radon dosimetry in environment

    International Nuclear Information System (INIS)

    Maged, A.F.; Ashraf, F.A.

    1997-01-01

    A solid state nuclear track detector Cr-39 has been used for measuring the radon concentration in the soil air and indoor concentration. The bulk etch rate, C B of Cr-39 has been measured in various concentrations of NaOH in the range (6-8 mole) at temperature 70 degree C. In addition, the track etch rate, V T , and the ratio V = V T /V B , of alpha particles emitted from radon gas exists in nature have been measured in a similar range of etching conditions. This study shows that 8 M NaOH at 70 degree C represent the optimum etching conditions for Cr-39, with the range of the present study. The equilibrium factor and gamma-dose equivalent were calculated by using the track densities of open and filtered solid state nuclear track detectors

  20. Comparison and limitations of three different bulk etch rate measurement methods used for gamma irradiated PM-355 detectors

    Energy Technology Data Exchange (ETDEWEB)

    Fazal-ur-Rehman E-mail: fazalr@kfupm.edu.sa; Abu-Jarad, F.; Al-Jarallah, M.I.; Farhat, M

    2001-06-01

    Samples of Nuclear Track Detectors (PM-355) were exposed to high gamma doses from 1x10{sup 5} Gy (10 Mrad) up to 1.2x10{sup 6} Gy (120 Mrad) at an incremental dose of 1x10{sup 5} Gy (10 Mrad). The gamma source was a 9.03 PBq (244 kCi) Co-60 source used for sterilization of medical syringes. The bulk etch rate (V{sub b}) was measured for various high gamma doses by three different methods: 1--thickness change method; 2--mass change method; 3--fission track diametric method. The study gives a comparison and limitations of these three methods used for bulk etch rate measurements in the detectors as a function of high gamma doses. The track etch rate (V{sub t}) and the sensitivity (V) of the detector were also measured using the fission track diametric method. It was observed that V{sub b} increases with the increase of the gamma absorbed dose at a fixed etching time in each bulk etch measuring method. The bulk etch rate decreases exponentially with the etching time at a fixed gamma absorbed dose in all three methods. The thickness change and mass change methods have successfully been applied to measure V{sub b} at higher gamma doses up to 1.2x10{sup 6} Gy (120 Mrad). The bulk etch rate determined by the mass change and thickness change methods was almost the same at a certain gamma dose and etching time whereas it was quite low in the case of the fission track diametric method due to its limitations at higher doses. Also in this method it was not possible to measure the fission fragment track diameters at higher doses due to the quick disappearance of the fission tracks and therefore the V{sub b} could not be estimated at higher gamma doses.

  1. Response of LET spectrometer based on track etching at some neutron sources

    International Nuclear Information System (INIS)

    Spurny, Frantisek; Brabcova, Katerina; Jadrnickova, Iva

    2008-01-01

    There is still need to develop upgrade, and test further methods able to characterise the external exposure to neutrons. This contribution presents further results obtained with the goal to enlarge and upgrade the possibility of neutron dosimetry and microdosimetry with a LET spectrometer based on the chemically etched track detectors (TED). As TED we have used several types of polyallyldiglycolcarbonates (PADC). The PADC detectors have been exposed in: high energy neutron beams at iThemba facility, Cape Town, South Africa, and in monoenergetic neutron beams at JRC Geel, Belgium. The studies have been performed in the frame of the ESA supported project DOBIES. (author)

  2. Method of plasma etching Ga-based compound semiconductors

    Science.gov (United States)

    Qiu, Weibin; Goddard, Lynford L.

    2012-12-25

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

  3. Interrelated temperature dependence of bulk etch rate and track length saturation time in CR-39 detector

    International Nuclear Information System (INIS)

    Azooz, A.A.; Al-Jubbori, M.A.

    2013-01-01

    Highlights: • New empirical parameterization of CR-39 bulk etch rate. • Bulk etch rates measurements using two different methods give consistent results. • Temperature independence of track saturation length. • Two empirical relation between bulk etch rate and temperature are suggested. • Simple inverse relation between bulk etch rate and track saturation time. -- Abstract: Experimental measurements of the etching solution temperature dependence of bulk etch rate using two independent methods revealed a few interesting properties. It is found that while the track saturation length is independent of etching temperature, the etching time needed to reach saturation is strongly temperature-dependent. It is demonstrated that there is systematic simple inverse relation between track saturation time, and etching solution temperature. In addition, and although, the relation between the bulk etch rate and etching solution temperature can be reasonably described by a modified form of the Arrhenius equation, better fits can be obtained by another equation suggested in this work

  4. Single Mode Optical Fiber based Refractive Index Sensor using Etched Cladding

    OpenAIRE

    Kumar, Ajay; Gupta, Geeta; Mallik, Arun; Bhatnagar, Anuj

    2011-01-01

    The use of optical fiber for sensor applications is a topic of current interest. We report the fabrication of etched single mode optical fiber based refractive index sensor. Experiments are performed to determine the etch rate of fiber in buffered hydrofluoric acid, which can be high or low depending upon the temperature at which etching is carried out. Controlled wet etching of fiber cladding is performed using these measurements and etched fiber region is tested for refractive index sensing...

  5. The use of CH3OH additive to NaOH for etching alpha particle tracks in a CR-39 plastic nuclear track detector

    International Nuclear Information System (INIS)

    Ashry, A.H.; Abdalla, A.M.; Rammah, Y.S.; Eisa, M.; Ashraf, O.

    2014-01-01

    Fast detection of alpha particles in CR-39 detectors was investigated using a new chemical etchant. 252 Cf and 241 Am sources were used for irradiating samples of CR-39 SSNTDs with fission fragments and alpha particles in air at normal temperature and pressure. A series of experimental chemical etching are carried out using new etching solution (8 ml of 10N NaOH+1 ml CH 3 OH) at 60 °C to detect alpha particle in short time in CR-39 detectors. Suitable analyzing software has been used to analyze experimental data. From fission and alpha track diameters, the value of bulk etching rate is equal to 2.73 μm/h. Both the sensitivity and etching efficiency were found to vary with the amount of methanol in the etching solution. Pure NaOH was used as a control to compare with the result from etching in NaOH with different concentrations of CH 3 OH. The etching efficiency is determined and compared with conventional aqueous solution of 6.25N NaOH at 70 °C for etching time equals 5 h. In this study, the obtained etching efficiency shows a considerable agreement with the previous work. - Highlights: • The value of bulk etching rate is equal to 2.73 μm/h. • Fast detection of alpha particles in CR-39 detectors. • Samples of CR-39 have been irradiated with fission fragments. • Etching efficiency was determined

  6. An XPS study of bromine in methanol etching and hydrogen peroxide passivation treatments for cadmium zinc telluride radiation detectors

    International Nuclear Information System (INIS)

    Babar, S.; Sellin, P.J.; Watts, J.F.; Baker, M.A.

    2013-01-01

    Highlights: ► CdZnTe single crystal etched in bromine-in-methanol and passivated in H 2 O 2 . ► XPS depth used to accurately determine enriched Te layer and TeO 2 thickness. ► For 0.2 and 2.0 (v/v) % bromine-in-methanol treatments, enriched Te layer thickness determined to be 1.3 and 1.8 nm, respectively. ► After passivation in 30 wt.% H 2 O 2 , the oxide thickness varies between 1.0 and 1.25 nm depending on the calculation method. - Abstract: The performance of single crystal CdZnTe radiation detectors is dependent on both the bulk and the surface properties of the material. After single crystal fabrication and mechanical polishing, modification of the surface to remove damage and reduce the surface leakage current is generally achieved through chemical etching followed by a passivation treatment. In this work, CdZnTe single crystals have been chemically etched using a bromine in methanol (BM) treatment. The BM concentrations employed were 0.2 and 2.0 (v/v) % and exposure times varied between 5 and 120 s. Angle resolved XPS and sputter depth profiling has been employed to characterize the surfaces for the different exposure conditions. A Te rich surface layer was formed for all exposures and the layer thickness was found to be independent of exposure time. The enriched Te layer thickness was accurately determined by calibrating the sputter rate against a CdTe layer of known thickness. For BM concentrations of 0.2 (v/v) % and 2 (v/v) %, the Te layer thickness was determined to be 1.3 ± 0.2 and 1.8 ± 0.2 nm, respectively. The BM etched surfaces have subsequently been passivated in a 30 wt.% H 2 O 2 solution employing exposure time of 15 s. The oxide layer thickness has been calculated using two standard XPS methodologies, based on the Beer–Lambert expression. The TeO 2 thickness calculated from ARXPS data are slightly higher than the thickness obtained by the simplified Beer–Lambert expression. For BM exposures of 30–120 s followed by a passivation

  7. Estimation of track registration efficiency in solution medium and study of gamma irradiation effects on the bulk-etch rate and the activation energy for bulk etching of CR-39 (DOP) Solid State Nuclear Track Detector

    International Nuclear Information System (INIS)

    Kalsi, P.C.

    2010-01-01

    The fission track registration efficiency of diethylene glycol bis allyl carbonate (dioctyl phthalate doped) (CR-39 (DOP)) solid state nuclear track detector (SSNTD) in solution medium (K wet ) has been experimentally determined and is found to be (9.7 ± 0.5).10 -4 cm. This is in good agreement with the values of other SSNTDs. The gamma irradiation effects in the dose range of 50.0-220.0 kGy on the bulk etch rate, V b and the activation energy for bulk etching, E of this solid state nuclear track detector (SSNTD) have also been studied. It is observed that the bulk etch rates increase and the activation energies for bulk etching decrease with the increase in gamma dose. These results have been explained on the basis of scission of the detector due to gamma irradiation

  8. Microdosimetry for a carbon ion beam using track-etched detectors

    International Nuclear Information System (INIS)

    Ambrozova, I.; Ploc, O.; Davidkova, M.; Vondracek, V.; Sefl, M.; Stepan, V.; Pachnerova Brabcova, K.; Incerti, S.

    2015-01-01

    Track-etched detectors (TED) have been used as linear energy transfer (LET) spectrometers in heavy ion beams for many years. LET spectra and depth -dose distribution of a carbon ion beam were measured behind polymethylmethacrylate degraders at Heavy Ion Medical Accelerator in Chiba, Japan. The measurements were performed along monoenergetic beam with energy 290 MeV u -1 in different positions: (1) at beam extraction area, (2) at beginning, (3) maximum and (4) behind the Bragg peak region (0, 117, 147 and 151 mm of water-equivalent depth, respectively). The LET spectra inside and outside of the primary ion beam have been evaluated. TED record only heavy charged particles with LET above 8 -10 keV μm -1 , while electrons and ions with lower LET are not detected. The Geant4 simulation toolkit version 4.9.6.P01 has been used to estimate the contribution of non-detected particles to absorbed dose. Presented results demonstrate the applicability of TED for microdosimetry measurements in therapeutic carbon ion beams. (authors)

  9. Nuclear track evolution by capillary condensation during etching in SSNT detectors

    International Nuclear Information System (INIS)

    Martín-Landrove, R.; Sajo-Bohus, L.; Palacios, D.

    2013-01-01

    The microscopic process taking place during chemical etching is described in terms of a dynamic framework governed by capillary condensation. The aim is to obtain physical information on how the cone shaped tracks with curved walls evolve during chemical etching under a close examination of first principles. The results obtained with the proposed theory are compared with published values to establish their range of validity. - Highlights: ► Capillary condensation seems to play a role at early etched track evolution. ► The etched track shape and the first principles behind it are easily related. ► In spite of its simplicity, theory was able to pass stringent experimental tests. ► Theory results have a simple analytical form which includes etch induction time

  10. Overcoming etch challenges related to EUV based patterning (Conference Presentation)

    Science.gov (United States)

    Metz, Andrew W.; Cottle, Hongyun; Honda, Masanobu; Morikita, Shinya; Kumar, Kaushik A.; Biolsi, Peter

    2017-04-01

    Research and development activities related to Extreme Ultra Violet [EUV] defined patterning continue to grow for cost and extreme process control challenges of Self-Aligned Quad Patterning [SAQP] with continued momentum for EUV ecosystem readiness could provide cost advantages in addition to improved intra-level overlay performance relative to multiple patterning approaches. However, Line Edge Roughness [LER] and Line Width Roughness [LWR] performance of EUV defined resist images are still far from meeting technology needs or ITRS spec performance. Furthermore, extreme resist height scaling to mitigate flop over exacerbates the plasma etch trade-offs related to traditional approaches of PR smoothing, descum implementation and maintaining 2D aspect ratios of short lines or elliptical contacts concurrent with ultra-high photo resist [PR] selectivity. In this paper we will discuss sources of LER/LWR, impact of material choice, integration, and innovative plasma process techniques and describe how TELTM VigusTM CCP Etchers can enhance PR selectivity, reduce LER/LWR, and maintain 2D aspect ratio of incoming patterns. Beyond traditional process approaches this paper will show the utility of: [1] DC Superposition in enhancing EUV resist hardening and selectivity, increasing resistance to stress induced PR line wiggle caused by CFx passivation, and mitigating organic planarizer wiggle; [2] Quasi Atomic Layer Etch [Q-ALE] for ARC open eliminating the tradeoffs between selectivity, CD, and shrink ratio control; and [3] ALD+Etch FUSION technology for feature independent CD shrink and LER reduction. Applicability of these concepts back transferred to 193i based lithography is also confirmed.

  11. Study of gamma irradiation effects on the etching and optical properties of CR-39 solid state nuclear track detector and its application to uranium assay in soil samples

    International Nuclear Information System (INIS)

    Amol Mhatre; Kalsi, P.C.

    2011-01-01

    The gamma irradiation effects in the dose range of 2.5-43.0 Mrad on the etching and optical characteristics of CR-39 solid state nuclear track detector (SSNTD) have been studied by using etching and UV-Visible spectroscopic techniques. From the measured bulk etch rates at different temperatures, the activation energies for bulk etching at different doses have also been determined. It is seen that the bulk etch rates increase and the activation energies for bulk etching decrease with the increase in gamma dose. The optical band gaps of the unirradiated and the gamma -irradiated detectors determined from the UV-Visible spectra were found to decrease with the increase in gamma dose. These results have been explained on the basis of scission of the detector due to gamma irradiation. The present studies can be used for the estimation of gamma dose in the range of 2.5-43.0 Mrad and can also be used for estimating track registration efficiency in the presence of gamma dose. The CR-39 detector has also been applied for the assay of uranium in some soil samples of Jammu city. (author)

  12. Comparison of neutron dose measured by Albedo TLD and etched tracks detector at PNC plutonium fuel facilities

    International Nuclear Information System (INIS)

    Tsujimura, N.; Momose, T.; Shinohara, K.; Ishiguro, H.

    1996-01-01

    Power Reactor and Nuclear Fuel Development Corporation (PNC) has fabricated Plutonium and Uranium Mixed OXide (MOX) fuel for FBR MONJU at Tokai works. In this site, PNC/Panasonic albedo TLDs/1/ are used for personnel neutron monitoring. And a part of workers wore Etched Tracks Detector (ETD) combined with TLD in order to check the accuracy of the neutron dose estimated by albedo TLD. In this paper, the neutron dose measured by TLD and ETD in the routine monitoring is compared at PNC plutonium fuel facilities. (author)

  13. Study of α-energy discrimination in CR-39 track etch detectors for use as a radon/thoron dosemeter

    International Nuclear Information System (INIS)

    Kandaiya, S.; Al-Najjar, S.A.R.; Piesch, E.

    1988-01-01

    The properties of CR 39 nuclear track detectors were evaluated for their α-energy discrimination up to 8.77 MeV using a combination of chemical-electrochemical track revealing techniques. Using three field strengths, α-energy discrimination by ECE track diameter and track density as a function of chemical pre-etching time were studied. α-energy spectra using different irradiation geometries were then evaluated using the optimum conditions and then compared with those obtained form other techniques. (author)

  14. Etched-hole formation in LR-115 cellulose nitrate detector irradiated with fast neutrons

    International Nuclear Information System (INIS)

    Sawamura, Teruko; Yamazaki, Hatsuo

    1988-01-01

    This paper deals with the neutron detection sensitivity of LR-115 cellulose nitrate by counting the etched holes of α-tracks produced by the (n,α) reactions of the constituent nuclei of the cellulose nitrate. A formula for the etched-hole formation efficiency is derived, and applied to obtain the efficiency for each of the (n,α) reactions of 14 N, 16 O and 12 C by using an experimental expression relating the track-to-bulk etch-rate ratio to the residual range of the α-particle. From the efficiencies obtained, and the reaction cross sections, the neutron detection sensitivity is evaluated against neutron energy up to 11 MeV, and compared with the experimental values in the energy region between 2.2 and 5 MeV; the agreement is fairly good in the region. (author)

  15. Measurement of low neutron-fluences using electrochemically etched PC and PET track detectors

    International Nuclear Information System (INIS)

    Somogyi, G.; Dajko, G.; Turek, K.; Spurny, F.

    1979-01-01

    Systematic investigations have been carried out to study different properties of electrochemically etched (ECE) polycarbonate (PC) and polyethylene-terephthalate (PET) foils. The dependence of the density of background discharge spots on surface-thickness removal, electrical field strength and frequency of voltage is given. The effect of these parameters on the neutron sensitivity of polycarbonate and polyethylene-terephthalate foils irradiated at right angles to 14.7 MeV, 241 Am-Be and 252 Cf neutrons is also studied. With knowledge of the background and sensitivity data, the etching and electrical parameters are optimized for low neutron-fluence measurements. (author)

  16. Dose-rate effects on the bulk etch-rate of CR-39 track detector exposed to low-LET radiations

    CERN Document Server

    Yamauchi, T; Oda, K; Ikeda, T; Honda, Y; Tagawa, S

    1999-01-01

    The effect of gamma-rays and pulsed electrons has been investigated on the bulk etch rate of CR-39 detector at doses up to 100 kGy under various dose-rate between 0.0044 and 35.0 Gy/s. The bulk etch rate increased exponentially with the dose at every examined dose-rates. It was reveled to be strongly depend on the dose-rate: the bulk etch rate was decreased with increasing dose-rate at the same total dose. A primitive model was proposed to explain the dose-rate effect in which oxygen dissolved was assumed to dominate the damage formation process.

  17. Radiation dosimetry for microbial experiments in the International Space Station using different etched track and luminescent detectors

    International Nuclear Information System (INIS)

    Goossens, O.; Vanhavere, F.; Leys, N.; De Boever, P.; O'Sullivan, D.; Zhou, D.; Spurny, F.; Yukihara, E. G.; Gaza, R.; McKeever, S. W. S.

    2006-01-01

    The laboratory of Microbiology at SCK.CEN, in collaboration with different universities, participates in several ESA programmes with bacterial experiments that are carried out in the International Space Station (ISS). The main objective of these programmes is to study the effects of space flight conditions such as microgravity and cosmic radiation on the general behaviour of model bacteria. To measure the radiation doses received by the bacteria, different detectors accompanied the microbiological experiments. The results obtained during two space flight missions are discussed. This dosimetry experiment was a collaboration between different institutes so that the doses could be estimated by different techniques. For measurement of the high linear energy transfer (LET) doses (>10 keV μm -1 ), two types of etched track detectors were used. The low LET part of the spectrum was measured by three types of thermoluminescent detectors ( 7 LiF:Mg,Ti; 7 LiF:Mg,Cu,P; Al 2 O 3 :C) and by the optically stimulated luminescence technique using Al 2 O 3 :C detectors. (authors)

  18. Field calibration of PADC track etch detectors for local neutron dosimetry in man using different radiation qualities

    Energy Technology Data Exchange (ETDEWEB)

    Haelg, Roger A., E-mail: rhaelg@phys.ethz.ch [Institute for Radiotherapy, Radiotherapie Hirslanden AG, Hirslanden Medical Center, Rain 34, CH-5000 Aarau (Switzerland); Besserer, Juergen [Institute for Radiotherapy, Radiotherapie Hirslanden AG, Hirslanden Medical Center, Rain 34, CH-5000 Aarau (Switzerland); Boschung, Markus; Mayer, Sabine [Division for Radiation Safety and Security, Paul Scherrer Institut, CH-5232 Villigen (Switzerland); Clasie, Benjamin [Department of Radiation Oncology, Massachusetts General Hospital, 30 Fruit Street, Boston, MA 02114 (United States); Kry, Stephen F. [Department of Radiation Physics, The University of Texas M.D. Anderson Cancer Center, 1515 Holcombe Blvd., Houston, TX 77030 (United States); Schneider, Uwe [Institute for Radiotherapy, Radiotherapie Hirslanden AG, Hirslanden Medical Center, Rain 34, CH-5000 Aarau (Switzerland); Vetsuisse Faculty, University of Zurich, Winterthurerstrasse 204, CH-8057 Zurich (Switzerland)

    2012-12-01

    In order to quantify the dose from neutrons to a patient for contemporary radiation treatment techniques, measurements inside phantoms, representing the patient, are necessary. Published reports on neutron dose measurements cover measurements performed free in air or on the surface of phantoms and the doses are expressed in terms of personal dose equivalent or ambient dose equivalent. This study focuses on measurements of local neutron doses inside a radiotherapy phantom and presents a field calibration procedure for PADC track etch detectors. An initial absolute calibration factor in terms of H{sub p}(10) for personal dosimetry is converted into neutron dose equivalent and additional calibration factors are derived to account for the spectral changes in the neutron fluence for different radiation therapy beam qualities and depths in the phantom. The neutron spectra used for the calculation of the calibration factors are determined in different depths by Monte Carlo simulations for the investigated radiation qualities. These spectra are used together with the energy dependent response function of the PADC detectors to account for the spectral changes in the neutron fluence. The resulting total calibration factors are 0.76 for a photon beam (in- and out-of-field), 1.00 (in-field) and 0.84 (out-of-field) for an active proton beam and 1.05 (in-field) and 0.91 (out-of-field) for a passive proton beam, respectively. The uncertainty for neutron dose measurements using this field calibration method is less than 40%. The extended calibration procedure presented in this work showed that it is possible to use PADC track etch detectors for measurements of local neutron dose equivalent inside anthropomorphic phantoms by accounting for spectral changes in the neutron fluence.

  19. The use of track-etch detectors for assessing radon concentrations

    International Nuclear Information System (INIS)

    Kendall, G.M.

    2002-01-01

    The author describes the track-etch dosimetry system used by the National Radiological Protection Board for measuring radon concentrations in dwellings and in workplaces. It also considers the criteria which should be satisfied by an ideal radon dosimetry system aimed at large-scale assessments of the risk from inhalation of radon decay products in room air. The present NRPB track-etch dosimetry system is matched against the requirements of such and ideal system. There is a brief description of the role of screening measurements designed to show whether there are dangerous levels of radon decay products in a house without giving an accurate assessment of their true long-term average concentration

  20. Influence of etching conditions on the efficiency and critical angle of plastic detector Makrofol-N

    International Nuclear Information System (INIS)

    Bhatia, R.K.; Singh, R.C.; Virk, H.S.

    1989-01-01

    The effect of concentration and temperature of the etching agent on Makrofol-N is studied using 54 129 Xe ion beam (7.5 MeV/n) at normal as well as oblique incidence. The critical angle for track revelation in Makrofol-N and the efficiency of track registration is estimated using standard formulation proposed by Somogyi and Hunyadi (1979). (author). 8 r efs

  1. Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching

    International Nuclear Information System (INIS)

    Su, Y.K.; Chang, S.J.; Kuan, T.M.; Ko, C.H.; Webb, J.B.; Lan, W.H.; Cherng, Y.T.; Chen, S.C.

    2004-01-01

    Photo-enhanced chemical (PEC) wet etching technology was used to etch GaN and AlGaN epitaxial layers. It was found that the maximum etch rates were 510, 1960, 300, and 0 nm/mm for GaN, Al 0.175 Ga 0.825 N, Al 0.23 Ga 0.77 N, and Al 0.4 Ga 0.6 N, respectively. It was also found that we could achieve a high Al 0.175 Ga 0.825 N to GaN etch rate ratio of 12.6. Nitride-based Schottky diodes and heterostructure field effect transistors (HFETs) were also fabricated by PEC wet etching. It was found that we could achieve a saturated I D larger than 850 mA/mm and a maximum g m about 163 mS/mm from PEC wet etched HFET with a 0.5 μm gate length. Compared with dry etched devices, the leakage currents observed from the PEC wet etched devices were also found to be smaller

  2. Space-based detectors

    DEFF Research Database (Denmark)

    Sesana, A.; Weber, W. J.; Killow, C. J.

    2014-01-01

    ) is planned for 2015. This mission and its payload “LISA Technology Package” will demonstrate key technologies for LISA. In this context, reference masses in free fall for LISA, and gravitational physics in general, was described by William Weber, laser interferometry at the pico-metre level and the optical...... of the LISA technology that are not going to be demonstrated by LPF, but under intensive development at the moment, were presented by Oliver Jennrich and Oliver Gerberding. Looking into the future, Japan is studying the design of a mid-frequency detector called DECIGO, which was discussed by Tomotada Akutsu...... as technology demonstrator. This will be the first inter-spacecraft laser interferometer and has many aspects in common with the LISA long arm, as discussed by Andrew Sutton....

  3. Operational comparison of TLD albedo dosemeters and etched-track detectors in the PuO2-UO2 mixed oxide fuel fabrication facilities

    International Nuclear Information System (INIS)

    Tsujimura, N.; Takada, C.; Yoshida, T.; Momose, T.

    2005-01-01

    Full text: The authors carried out an operational study that compared the use of TLD albedo dosemeters with etched-track detector in plutonium environments of Japan Nuclear Cycle Development Institute, Tokai Works. A selected group of workers engaged in the fabrication process of MOX (PuO 2 -UO 2 mixed oxide) fuel wore both TLD albedo dosemeters and etched-track detectors over a period from 1991 to 1993. The TLD albedo dosemeter is the Panasonic model UD-809P and the etched-track detector is the NEUTRAK (polyallyl diglycol carbonate + 1mm-t polyethylene radiator) commercially available from Nagase-Landauer Ltd. Both dosemeters were issued and read monthly. It was found that the TL readings were generally proportional to the counted etch-pits, and thus the dose equivalent results obtained from TLD albedo dosemeter agreed with those from etched-track detector within a factor of 1.5. This result indicates that, in the workplaces of the MOX plants, the neutron spectrum remained almost constant in terms of time and space, and the appropriate range of field-specific correction with spectrum variations could be small in albedo dosimetry. In addition, the calibrations of both dosemeters in the workplaces and in a bare and moderated 252 Cf calibration field were performed for quantitative validation for the results from the operational comparison. In the former experiments, locations were selected that were representative of typical neutron measurements according to the prior neutron spectra measurements with the multi-sphere spectrometer. In the latter experiments, the workplace environments were simulated by using a 252 Cf source surrounded with cylindrical steel/PMMA moderators. From both experiments, the relationship between TL readings and counted etch-pits with neutron spectrum variation was determined. As expected, the relationship obtained from the simulated workplace field calibration reproduced that from the operational comparison. (author)

  4. The effect of ArF laser irradiation (193 nm) on the photodegradation and etching properties of alpha-irradiated CR-39 detectors

    Energy Technology Data Exchange (ETDEWEB)

    Shakeri Jooybari, B. [Department of Energy Engineering and Physics, Amirkabir University of Technology, P.O. Box 15875-4413, Tehran, Islamic Republic of Iran (Iran, Islamic Republic of); Nuclear Science and Technology Research Institute (NSRT), Tehran, Islamic Republic of Iran (Iran, Islamic Republic of); Ghergherehchi, M. [College of Information and Technology/ school of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon (Korea, Republic of); Afarideh, H., E-mail: hafarideh@aut.ac.ir [Department of Energy Engineering and Physics, Amirkabir University of Technology, P.O. Box 15875-4413, Tehran, Islamic Republic of Iran (Iran, Islamic Republic of); Lamehi-Rachti, M. [Nuclear Science and Technology Research Institute (NSRT), Tehran, Islamic Republic of Iran (Iran, Islamic Republic of)

    2015-01-01

    The effects of ArF laser irradiation (λ=193nm) at various fluences (energy dose or energy density) on the etching properties of pre-exposed (laser + alpha) CR-39 detectors were studied. First, UV–Vis and Fourier transform infrared (FTIR) spectra were acquired for non-laser-irradiated and laser-irradiated samples to detect the influence of the ArF laser on the chemical modification of the CR-39. Changes observed in the spectra indicated that the predominant process that occurred upon ArF laser irradiation was a bond-scission process. Thereafter, the mean track and bulk etching parameters were experimentally measured in ArF-laser-irradiated CR-39 detectors exposed to an alpha source ({sup 241}Am, E = 5.49 MeV). Inhomogeneous regions in the laser-irradiated side of the CR-39 demonstrated a variable etching rate on only the front side of the CR-39 detector. New equations are also presented for the average bulk etching rate for these inhomogeneous regions (front side). The mean bulk and track etching rates and the mean track dimensions increased in a fluence range of 0–37.03 mJ/cm{sup 2} because of photodegradation and the scission of chemical bonds, which are the predominant processes in this range. When the fluence was increased from 37.03 to 123.45 mJ/cm{sup 2}, the bulk and track etching rates and the track dimensions slowly decreased because of the formation of cross-linked structures on the CR-39 surface. The behavior of the bulk and track etching rates and the track dimensions appears to be proportional to the dose absorbed on the detector surface. It was observed that as the etching time was increased, the bulk and track etching rates and the track dimensions of the laser-irradiated samples decreased because of the shallow penetration depth of the 193 nm laser and the reduction in the oxygen penetration depth.

  5. Optimisation of elevated radon concentration measurement by using electro-chemical etching of nuclear track detectors

    International Nuclear Information System (INIS)

    Celikovic, I.; Ujic, P.; Fujimoto, K.; Tommasino, L.; Demajo, A.; Zunic, Z.; Celikovic, I.)

    2007-01-01

    In the paper, two methods for adjusting of passive radon-thoron discriminative dosimeters (UFO detector) for enhanced radon concentration measurement are presented. Achieved upper limit of detection is 5.94 MBq m-3 d [sr

  6. Processing of plastic track detectors

    International Nuclear Information System (INIS)

    Somogyi, G.

    1977-01-01

    A survey of some actual problems of the track processing methods available at this time for plastics is presented. In the case of the conventional chemical track-etching technique, mainly the etching situations related to detector geometry, and the relationship between registration sensitivity and the etching parameters are considered. Special attention is paid to the behaviour of track-revealing by means of electrochemical etching. Finally, some properties of a promising new track processing method based on graft polymerization are discussed. (author)

  7. Processing of plastic track detectors

    International Nuclear Information System (INIS)

    Somogyi, G.

    1976-01-01

    A survey of some actual problems of the track processing methods available at this time for plastics is presented. In the case of the conventional chemical track etching technique mainly the etching situations related to detector geometry and the relationship of registration sensitivity and the etching parameters are considered. A special attention is paid to the behaviour of track revealing by means of electrochemical etching. Finally, some properties of a promising new track processing method based on graft polymerization is discussed. (orig.) [de

  8. A new concept for spatially divided Deep Reactive Ion Etching with ALD-based passivation

    International Nuclear Information System (INIS)

    Roozeboom, F; Kniknie, B; Lankhorst, A M; Winands, G; Knaapen, R; Smets, M; Poodt, P; Dingemans, G; Keuning, W; Kessels, W M M

    2012-01-01

    Conventional Deep Reactive Ion Etching (DRIE) is a plasma etch process with alternating half-cycles of 1) Si-etching with SF 6 to form gaseous SiF x etch products, and 2) passivation with C 4 F 8 that polymerizes as a protecting fluorocarbon deposit on the sidewalls and bottom of the etched features. In this work we report on a novel alternative and disruptive technology concept of Spatially-divided Deep Reactive Ion Etching, S-DRIE, where the process is converted from the time-divided into the spatially divided regime. The spatial division can be accomplished by inert gas bearing 'curtains' of heights down to ∼20 μm. These curtains confine the reactive gases to individual (often linear) injection slots constructed in a gas injector head. By horizontally moving the substrate back and forth under the head one can realize the alternate exposures to the overall cycle. A second improvement in the spatially divided approach is the replacement of the CVD-based C 4 F 8 passivation steps by ALD-based oxide (e.g. SiO 2 ) deposition cycles. The method can have industrial potential in cost-effective creation of advanced 3D interconnects (TSVs), MEMS manufacturing and advanced patterning, e.g., in nanoscale transistor line edge roughness using Atomic Layer Etching.

  9. Analysis of InP-based single photon avalanche diodes based on a single recess-etching process

    Science.gov (United States)

    Lee, Kiwon

    2018-04-01

    Effects of the different etching techniques have been investigated by analyzing electrical and optical characteristics of two-types of single-diffused single photon avalanche diodes (SPADs). The fabricated two-types of SPADs have no diffusion depth variation by using a single diffusion process at the same time. The dry-etched SPADs show higher temperature dependence of a breakdown voltage, larger dark-count-rate (DCR), and lower photon-detection-efficiency (PDE) than those of the wet-etched SPADs due to plasma-induced damage of dry-etching process. The results show that the dry etching damages can more significantly affect the performance of the SPADs based on a single recess-etching process.

  10. CCD-based vertex detectors

    CERN Document Server

    Damerell, C J S

    2005-01-01

    Over the past 20 years, CCD-based vertex detectors have been used to construct some of the most precise 'tracking microscopes' in particle physics. They were initially used by the ACCMOR collaboration for fixed target experiments in CERN, where they enabled the lifetimes of some of the shortest-lived charm particles to be measured precisely. The migration to collider experiments was accomplished in the SLD experiment, where the original 120 Mpixel detector was later upgraded to one with 307 Mpixels. This detector was used in a range of physics studies which exceeded the capability of the LEP detectors, including the most precise limit to date on the Bs mixing parameter. This success, and the high background hit densities that will inevitably be encountered at the future TeV-scale linear collider, have established the need for a silicon pixel-based vertex detector at this machine. The technical options have now been broadened to include a wide range of possible silicon imaging technologies as well as CCDs (mon...

  11. Novel single-cell mega-size chambers for electrochemical etching of panorama position-sensitive polycarbonate ion image detectors

    Science.gov (United States)

    Sohrabi, Mehdi

    2017-11-01

    A novel development is made here by inventing panorama single-cell mega-size electrochemical etching (MS-ECE) chamber systems for processing panorama position-sensitive mega-size polycarbonate ion image detectors (MS-PCIDs) of potential for many neutron and ion detection applications in particular hydrogen ions or proton tracks and images detected for the first time in polycarbonates in this study. The MS-PCID is simply a large polycarbonate sheet of a desired size. The single-cell MS-ECE invented consists of two large equally sized transparent Plexiglas sheets as chamber walls holding a MS-PCID and the ECE chamber components tightly together. One wall has a large flat stainless steel electrode (dry cell) attached to it which is directly in contact with the MS-PCID and the other wall has a rod electrode with two holes to facilitate feeding and draining out the etching solution from the wet cell. A silicon rubber washer plays the role of the wet cell to hold the etchant and the electrical insulator to isolate the dry cell from the wet cell. A simple 50 Hz-HV home-made generator provides an adequate field strength through the two electrodes across the MS-ECE chamber. Two panorama single-cell MS-ECE chamber systems (circular and rectangular shapes) constructed were efficiently applied to processing the MS-PCIDs for 4π ion emission image detection of different gases in particular hydrogen ions or protons in a 3.5 kJ plasma focus device (PFD as uniquely observed by the unaided eyes). The panorama MS-PCID/MS-ECE image detection systems invented are novel with high potential for many applications in particular as applied to 4π panorama ion emission angular distribution image detection studies in PFD space, some results of which are presented and discussed.

  12. Multi-Step Deep Reactive Ion Etching Fabrication Process for Silicon-Based Terahertz Components

    Science.gov (United States)

    Jung-Kubiak, Cecile (Inventor); Reck, Theodore (Inventor); Chattopadhyay, Goutam (Inventor); Perez, Jose Vicente Siles (Inventor); Lin, Robert H. (Inventor); Mehdi, Imran (Inventor); Lee, Choonsup (Inventor); Cooper, Ken B. (Inventor); Peralta, Alejandro (Inventor)

    2016-01-01

    A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.

  13. Flux based modeling and simulation of dry etching for fabrication of silicon deep trench structures

    Energy Technology Data Exchange (ETDEWEB)

    Malik Rizwan [State Key Laboratory of Digital Manufacturing Equipment and technology, Huazhong University of Science and Technology, 1037 Luoyu road, Wuhan, China 43007 (China); Shi Tielin; Tang Zirong; Liu Shiyuan, E-mail: zirong@mail.hust.edu.cn, E-mail: rizwanmalik@smail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 1037 Luoyu road Wuhan, 430074 (China)

    2011-02-01

    Deep reactive ion etching (DRIE) process is a key growth for fabrication of micro-electromechanical system (MEMS) devices. Due to complexity of this process, including interaction of the process steps, full analytical modeling is complex. Plasma process holds deficiency of understanding because it is very easy to measure the results empirically. However, as device parameters shrink, this issue is more critical. In this paper, our process was modeled qualitatively based on 'High Density Plasma Etch Model'. Deep trench solutions of etch rate based on continuity equation were successfully generated first time through mathematical analysis. It was also proved that the product of fluorine and gas phase concentration in SF{sub 6} remains identical during both deposition and etching stages. The etching process was treated as a combination of isotropic, directional and angle-dependent component parts. It exploited a synergistic balance of chemical as well as physical etching for promoting silicon trenches and high aspect ratio structures. Simulations were performed for comprehensive analysis of fluxes coming towards the surface during chemical reaction of gas. It is observed that near the surface, the distribution of the arrival flux follows a cosine distribution. Our model is feasible to analyze various parameters like gas delivery, reactor volume and temperature that help to assert large scale effects and to optimize equipment design.

  14. LET spectrometry with track etch detectors-Use in high-energy radiation fields

    Czech Academy of Sciences Publication Activity Database

    Jadrníčková, Iva; Spurný, František

    2008-01-01

    Roč. 43, 2-6 (2008), s. 683-687 ISSN 1350-4487. [International Conference on Dosimetry /15./. Delft, 08.07.-13.07.2007] R&D Projects: GA ČR GA202/04/0795; GA ČR(CZ) GD202/05/H031; GA MŠk 1P05OC032 Institutional research plan: CEZ:AV0Z10480505 Keywords : track detector * linear energy transfer * CERF Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.267, year: 2008

  15. Design of experiment characterization of microneedle fabrication processes based on dry silicon etching

    Science.gov (United States)

    Held, J.; Gaspar, J.; Ruther, P.; Hagner, M.; Cismak, A.; Heilmann, A.; Paul, O.

    2010-02-01

    This paper reports on the characterization of dry etching-based processes for the fabrication of silicon microneedles using a design of experiment (DoE) approach. The possibility of using such microneedles as protruding microelectrodes able to electroporate adherently growing cells and record intracellular potentials motivates the systematic analysis of the influence of etching parameters on the needle shape. Two processes are characterized: a fully isotropic etch process and a three-step etching approach. In the first case, the shape of the microneedles is defined by a single etch step. For the stepped method, the structures are realized using the following sequence: a first, isotropic step defines the tip; this is followed by anisotropic etching that increases the height of the needle; a final isotropic procedure thins the microneedle and sharpens its tip. From the various process parameters tested, it is concluded that the isotropic fabrication is influenced mostly by four process parameters, whereas six parameters dominantly govern the outcome of the stepped etching technique. The dependence of the needle shape on the etch mask diameter is also investigated. Microneedles with diameters down to the sub-micrometer range and heights below 10 µm are obtained. The experimental design is performed using the D-optimal method. The resulting geometry, i.e. heights, diameters and radii of curvature measured at different positions, is extracted from scanning electron micrographs of needle cross-sections obtained from cuts by focused ion beam. The process parameters are used as inputs and the geometry features of the microneedles as outputs for the analysis of the process.

  16. Design of experiment characterization of microneedle fabrication processes based on dry silicon etching

    International Nuclear Information System (INIS)

    Held, J; Gaspar, J; Ruther, P; Paul, O; Hagner, M; Cismak, A; Heilmann, A

    2010-01-01

    This paper reports on the characterization of dry etching-based processes for the fabrication of silicon microneedles using a design of experiment (DoE) approach. The possibility of using such microneedles as protruding microelectrodes able to electroporate adherently growing cells and record intracellular potentials motivates the systematic analysis of the influence of etching parameters on the needle shape. Two processes are characterized: a fully isotropic etch process and a three-step etching approach. In the first case, the shape of the microneedles is defined by a single etch step. For the stepped method, the structures are realized using the following sequence: a first, isotropic step defines the tip; this is followed by anisotropic etching that increases the height of the needle; a final isotropic procedure thins the microneedle and sharpens its tip. From the various process parameters tested, it is concluded that the isotropic fabrication is influenced mostly by four process parameters, whereas six parameters dominantly govern the outcome of the stepped etching technique. The dependence of the needle shape on the etch mask diameter is also investigated. Microneedles with diameters down to the sub-micrometer range and heights below 10 µm are obtained. The experimental design is performed using the D-optimal method. The resulting geometry, i.e. heights, diameters and radii of curvature measured at different positions, is extracted from scanning electron micrographs of needle cross-sections obtained from cuts by focused ion beam. The process parameters are used as inputs and the geometry features of the microneedles as outputs for the analysis of the process.

  17. Effect of neutron irradiation on etching, optical and structural properties of microscopic glass slide used as a solid state nuclear track detector

    International Nuclear Information System (INIS)

    Singh, Surinder; Kaur Sandhu, Amanpreet; Prasher, Sangeeta; Prakash Pandey, Om

    2007-01-01

    Microscopic glass slides are soda-lime glasses which are readily available and are easy to manufacture with low production cost. The application of these glasses as nuclear track detector will help us to make use of these glasses as solid-state nuclear track detector. The present paper describes the variation in the etching, optical and structural properties of the soda-lime microscopic glass slides due to neutron irradiation of different fluences. The color transformation and an increase in the optical absorption with neutron irradiation are observed. Both the bulk and track etch rates are found to increase with neutron fluence, thus showing a similar dependence on neutron fluence, but the sensitivity remains almost constant

  18. Amorphous silicon based particle detectors

    OpenAIRE

    Wyrsch, N.; Franco, A.; Riesen, Y.; Despeisse, M.; Dunand, S.; Powolny, F.; Jarron, P.; Ballif, C.

    2012-01-01

    Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micromete...

  19. Lifetime Extension of the Gas Discharge Detectors with Plasma Etching of Silicon Deposits in 80%CF4 + 20%CO2

    Science.gov (United States)

    Gavrilov, G. E.; Vakhtel, V. M.; Maysuzenko, D. A.; Tavtorkina, T. A.; Fetisov, A. A.; Shvetsova, N. Yu.

    2017-12-01

    A method of elimination of silicon compounds from the anode wire of an aged proportional counter is presented. The aging of a counter with a 70%Ar + 30%CO2 and a 60%Ar + 30%CO2 + 10%CF4 working mixture was stimulated by a 90Sr β source. To accelerate the process of aging, the gas mixture flow to the counter was supplied through a pipe with RTV coated wall. As a result, the amplitude of the signal decreased 70% already at accumulated charge of Q = 0.03 C/cm. The etching of the silicon compounds on the wire surface with an 80%CF4 + 20%CO2 gas mixture discharge led to full recovery of the operating characteristics of detector and an increase in the lifetime. A scanning electron microscopy and X-ray spectroscopy analysis of the recovered wire surface were performed. In accordance with the results, a good quality of wire cleaning from SiO2 compounds was obtained.

  20. Sources of error in etched-track radon measurements and a review of passive detectors using results from a series of radon intercomparisons

    International Nuclear Information System (INIS)

    Ibrahimi, Z.-F.; Howarth, C.B.; Miles, J.C.H.

    2009-01-01

    Etched-track passive radon detectors are a well established and apparently simple technology. As with any measurement system, there are multiple sources of uncertainty and potential for error. The authors discuss these as well as good quality assurance practices. Identification and assessment of sources of error is crucial to maintain high quality standards by a measurement laboratory. These sources can be found both within and outside the radon measurement laboratory itself. They can lead to changes in track characteristics and ultimately detector response to radon exposure. Changes don't just happen during etching, but can happen during the recording or counting of etched-tracks (for example ageing and fading effects on track sensitivity, or focus and image acquisition variables). Track overlap means the linearity of response of detectors will vary as exposure increases. The laboratory needs to correct the calibration curve due to this effect if it wishes to offer detectors that cover a range of exposures likely to be observed in the field. Extrapolation of results to estimate annual average concentrations also has uncertainty associated with it. Measurement systems need to be robust, reliable and stable. If a laboratory is not actively and constantly monitoring for anomalies via internal testing, the laboratory may not become aware of a problem until some form of external testing occurs, eg an accreditation process, performance test, interlaboratory comparison exercise or when a customer has cause to query results. Benchmark standards of accuracy and precision achievable with passive detectors are discussed drawing on trends from the series of intercomparison exercises for passive radon detectors which began in 1982, organised by the National Radiological Protection Board (NRPB), subsequently the Health Protection Agency (HPA).

  1. NEW LENSLET BASED IFS WITH HIGH DETECTOR PIXEL EFFICIENCY

    Science.gov (United States)

    Gong, Qian

    2018-01-01

    Three IFS types currently used for optical design are: lenslet array, imager slicer, and lenslet array and fiber combined. Lenslet array based Integral Field Spectroscopy (IFS) is very popular for many astrophysics applications due to its compactness, simplicity, as well as cost and mass savings. The disadvantage of lenslet based IFS is its low detector pixel efficiency. Enough spacing is needed between adjacent spectral traces in cross dispersion direction to avoid wavelength cross-talk, because the same wavelength is not aligned to the same column on detector. Such as on a recent exoplanet coronagraph instrument study to support the coming astrophysics decadal survey (LUVOIR), to cover a 45 λ/D Field of View (FOV) with a spectral resolving power of 200 at shortest wavelength, a 4k x 4k detector array is needed. This large format EMCCD pushes the detector into technology development area with a low TRL. Besides the future mission, it will help WFIRST coronagraph IFS by packing all spectra into a smaller area on detector, which will reduce the chance for electrons to be trapped in pixels, and slow the detector degradation during the mission.The innovation we propose here is to increase the detector packing efficiency by grouping a number of lenslets together to form many mini slits. In other words, a number of spots (Point Spread Function at lenslet focus) are aligned into a line to resemble a mini slit. Therefore, wavelength cross-talk is no longer a concern anymore. This combines the advantage of lenslet array and imager slicer together. The isolation rows between spectral traces in cross dispersion direction can be reduced or removed. So the packing efficiency is greatly increased. Furthermore, the today’s microlithography and etching technique is capable of making such a lenslet array, which will relax the detector demand significantly. It will finally contribute to the habitable exoplanets study to analyzing their spectra from direct images. Detailed theory

  2. Etching and anti-etching strategy for sensitive colorimetric sensing of H2O2 and biothiols based on silver/carbon nanomaterial.

    Science.gov (United States)

    Hou, Wenli; Liu, Xiaoying; Lu, Qiujun; Liu, Meiling; Zhang, Youyu; Yao, Shouzhuo

    2018-02-01

    In this paper, the colorimetric sensing of H 2 O 2 related molecules and biothiols based on etching and anti-etching strategy was firstly proposed. Ag/carbon nanocomposite (Ag/C NC) was served as the sensing nanoprobe, which was synthesized via carbon dots (C-dots) as the reductant and stabilizer. The characteristic surface plasmon resonance (SPR) absorbance of Ag nanoparticles (AgNPs) was sensitive to the amount of hydrogen peroxide (H 2 O 2 ). It exhibited strong optical responses to H 2 O 2 with the solution colour changing from yellow to nearly colourless, which is resulted from the etching of Ag by H 2 O 2 . The sensing platform was further extended to detect H 2 O 2 related molecules such as lactate in coupling with the specific catalysis oxidation of L-lactate by lactate oxidase (LOx) and formation of H 2 O 2 . It provides wide linear range for detecting H 2 O 2 in 0.1-80μM and 80-220μM with the detection limit as low as 0.03μM (S/N=3). In the presence of biothiols, the etching from the H 2 O 2 can be hampered. Other biothiols exhibit anti-etching effects well. The strategy works well in detecting of typical biothiols including cysteine (Cys), homocysteine (Hcy) and glutathione (GSH). Thus, a simple colorimetric strategy for sensitive detection of H 2 O 2 and biothiols is proposed. It is believed that the colorimetric sensor based on etching and anti-etching strategy can be applied in other systems in chemical and biosensing areas. Copyright © 2017 Elsevier B.V. All rights reserved.

  3. A comparison of etched-geometry and overgrown silicon permeable base transistors by two-dimensional numerical simulations

    Science.gov (United States)

    Vojak, B. A.; Alley, G. D.

    1983-08-01

    Two-dimensional numerical simulations are used to compare etched geometry and overgrown Si permeable base transistors (PTBs), considering both the etched collector and etched emitter biasing conditions made possible by the asymmetry of the etched structure. In PTB devices, the two-dimensional nature of the depletion region near the Schottky contact base grating results in a smaller electron barrier and, therefore, a larger collector current in the etched than in the overgrown structure. The parasitic feedback effects which result at high base-to-emitter bias levels lead to a deviation from the square-law behavior found in the collector characteristics of the overgrown PBT. These structures also have lower device capacitances and smaller transconductances at high base-to-emitter voltages. As a result, overgrown and etched structures have comparable predicted maximum values of the small signal unity short-circuit current gain frequency and maximum oscillation frequency.

  4. Hydrogen iodide-based dry etching of GaAs, InP, and related compounds

    International Nuclear Information System (INIS)

    Pearton, S.J.; Chakrabarti, U.K.; Hobson, W.S.; Abernathy, C.R.; Katz, A.; Ren, F.; Fullowan, T.R.; Perley, A.P.

    1992-01-01

    In this paper HI/H 2 /Ar discharges are shown to be universal etchants for III-V semiconductors, giving rise to highly anisotropic features with smooth surface morphologies. At low dc Self bias (-V) and low pressure (1 mTorr), etch rates for all III-V materials of >2000 Angstrom · min -1 are possible for high HI percentages in the discharges, whereas rates greater than 1 μm · min -1 are obtained at higher pressures and dc biases. These etch rates are approximately an order of magnitude faster than for CH 4 /H 2 Ar mixtures under the same conditions and there is no polymer deposition on the mask or within the reactor chamber with HI/H 2 /Ar. Auger electron spectroscopy reveals residue-free, stoichiometric surfaces after dry etching in this mixture. As a result, photoluminescent intensities from dry etched samples remain high with little apparent damage introduction. Changes in the near-surface carrier concentration due to hydrogen passivation effects are also negligible with HI-based mixtures in comparison to CH 4 -based dry etching

  5. Etched track radiometers in radon measurements: a review

    CERN Document Server

    Nikolaev, V A

    1999-01-01

    Passive radon radiometers, based on alpha particle etched track detectors, are very attractive for the assessment of radon exposure. The present review considers various devices used for measurement of the volume activity of radon isotopes and their daughters and determination of equilibrium coefficients. Such devices can be classified into 8 groups: (i) open or 'bare' detectors, (ii) open chambers, (iii) sup 2 sup 2 sup 2 Rn chambers with an inlet filter, (iv) advanced sup 2 sup 2 sup 2 Rn radiometers, (v) multipurpose radiometers, (vi) radiometers based on a combination of etched track detectors and an electrostatic field, (vii) radiometers based on etched track detectors and activated charcoal and (viii) devices for the measurement of radon isotopes and/or radon daughters by means of track parameter measurements. Some of them such as the open detector and the chamber with an inlet filter have a variety of modifications and are applied widely both in geophysical research and radon dosimetric surveys. At the...

  6. Lignite and tin ores exploration in southern part of Thailand by using nuclear track-etch detectors

    International Nuclear Information System (INIS)

    Chittrakarn, T.; Boonnummar, R.; Pongsuwan, T.; Nuannin, P.; Kaew-On, C.

    1993-01-01

    Both lignite and tin mines in Southern of Thailand are associated with uranium ore. In lignite exploration, Bangpudum Lignite Mine at Krabi Province was chosen for this studied because we know the exact location and deposition of coal seam by using other geophysical technique and also confirm by borehole. The size 1x2 cm 2 of cellulose nitrate CN-85 films were used, each film was stuck at the inner bottom of a softdrink cup. Each cup was put up side down at the bottom of a borehole about 75 cm depth from the earth surface and laid about 10 m apart. All the cups were put in the hole along the line in order to cover about 280 metre in the cross sectional direction long of the known coal seam. After one month, all the film detectors were collected and etched with 6.25N NaOH at 60 o C about 25 minutes long in order to enlarge the latent alpha registration tracks. These alpha particles were emitted from radon gas (Rn-222) which was generated from uranium associated with lignite ore. The registration track density per area of each CN-85 film was studied by optical microscope at 400x magnifications. We found that the track densities of the films have high correlation with the depth of the known coal seam while high and low track densities will correspond to the shallow and deep coal seam respectively. Also, track density was significantly higher than background. A similar manner of experiment was designed for tin ore exploration at Ronpibul district, Nakorn Si Thammarat province. The result is in progress and will present at the conference. (Author)

  7. Long-term determination of airborne concentrations of unattached and attached radon progeny using stacked LR 115 detector with multi-step etching

    International Nuclear Information System (INIS)

    Nikezic, D.; Yu, K.N.

    2010-01-01

    We developed the theoretical basis for long-term determination of airborne concentrations of unattached and attached radon progeny. The work was separated into two parts. First, we showed that (stacked and multiply etched) LR 115 detectors could be used to determine airborne concentrations of the short-lived radon progeny, 218 Po and 214 Bi. The equilibrium factor F between radon and its progeny could then be determined through the use of the reduced equilibrium factor F red . The airborne concentrations of 214 Pb could then be determined. Second, we developed a method based on the airborne concentrations of 218 Po, 214 Pb and 214 Bi to determine the parameters of the Jacobi room model, viz., the ventilation rate λ v , aerosol attachment rate λ a , deposition rate of unattached progeny λ d u and the deposition rate of attached progeny λ d u . With these parameters, the unattached fraction f p of the potential alpha energy concentration could also be determined. Knowledge of f p , together with F, would enable more accurate determination of the effective dose in the human lung.

  8. Double side multicrystalline silicon passivation by one step stain etching-based porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Mohamed, Seifeddine Belhadj; Ben Rabha, Mohamed; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2012-10-15

    In this paper, we investigate the effect of stain etching-based porous silicon on the double side multicrystalline silicon. Special attention is given to the use of the stain etched PS as an antireflection coating as well as for surface passivating capabilities. Stain etching of double side multicrystalline silicon leads to the formation of PS nanostructures, that dramatically decrease the surface reflectivity from 30% to about 7% and increase the effective lifetime from 1 {mu}s to 10 {mu}s at a minority carrier density ({Delta}n) of 10{sup 15} cm{sup -3}. These results let us correlate the rise of the lifetime values to the photoluminescence intensity to the hydrogen and oxide passivation as shown by FTIR analysis. This low-cost PS formation process can be applied in the photovoltaic cell technology as a standard procedure (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Lithium-based neutron detectors

    International Nuclear Information System (INIS)

    Yursova, L.

    1977-01-01

    The problems of using scintillation lithium-based detectors (LiJ(Eu) and 6 LiJ(Eu)), as well as lithium glasses for neutron detection are described. As compared with the glasses the LiJ(Eu) monocrystal possesses substantially higher energy resolution, its luminescence yield is considerably higher (in some cases ten fold), its application makes possible gamma radiation discrimination with the energy approximately four times higher and its higher specific mass ensures better efficiency of gamma radiation counting. The only 6 LiJ(Eu) drawback is its high hydroscopicity as well as its possibility to be used only in a limited temperature range (maximum temperature +35 deg C). The lithium glass can be used (with the exception of spectrometric measurements and radiation mixed regions measurement) with more than 1 MeV gamma radiation energy in a wide temperature range, in agressive, corroding and acid media

  10. Fast neutron spectrometry based on proton detection in CR-39 detector

    Energy Technology Data Exchange (ETDEWEB)

    Dajko, G.; Somogyi, G.

    1986-01-01

    The authors have developed a home-made proton-sensitive CR-39 track detector called MA-ND/p. Using this and the n-p scattering process the performance of a fast neutron spectrometer has been studied by applying two different methods. These are based on track density determinations by using varying radiator thicknesses at constant etching time and by using varying etching times at fixed radiator thickness, respectively. For both methods studied a computer programme is made to calculate the theoretically expected neutron sensitivity as a function of neutron energy. For both methods the neutron sensitivities, expressed in terms of observable etched proton tracks per neutron, are determined experimentally for 3.3 and 14.7 MeV neutron energies. The theoretical and experimental data obtained are compared.

  11. Fast neutron spectrometry based on proton detection in CR-39 detector

    International Nuclear Information System (INIS)

    Dajko, G.; Somogyi, G.

    1986-01-01

    The authors have developed a home-made proton-sensitive CR-39 track detector called MA-ND/p. Using this and the n-p scattering process the performance of a fast neutron spectrometer has been studied by applying two different methods. These are based on track density determinations by using varying radiator thicknesses at constant etching time and by using varying etching times at fixed radiator thickness, respectively. For both methods studied a computer programme is made to calculate the theoretically expected neutron sensitivity as a function of neutron energy. For both methods the neutron sensitivities, expressed in terms of observable etched proton tracks per neutron, are determined experimentally for 3.3 and 14.7 MeV neutron energies. The theoretical and experimental data obtained are compared. (author)

  12. Development of etched nuclear tracks

    International Nuclear Information System (INIS)

    Somogyi, G.

    1980-01-01

    The theoretical description of the evolution of etched tracks in solid state nuclear track detectors is considered for different initial conditions, for the cases of constant and varying track etch rates, isotropic and anisotropic bulk etching as well as for thick and thin detectors. It is summarized how one can calculate the main parameters of etch-pit geometry, the track length, the axes of a surface track opening, track profile and track contour. The application of the theory of etch-track evolution is demonstrated with selected practical problems. Attention is paid to certain questions related to the determination of unknown track parameters and calculation of surface track sizes. Finally, the theory is extended to the description of the perforation and etch-hole evolution process in thin detectors, which is of particular interest for track radiography and nuclear filter production. (orig.)

  13. Development of etched nuclear tracks

    International Nuclear Information System (INIS)

    Somogyi, G.

    1979-01-01

    The theoretical description of the evolution of etched tracks in solid state nuclear track detectors is considered for different initial conditions, for the cases of constant and varying track etch rates, isotopic and unisotropic bulk etching as well as for thick and thin detectors. It is summarized how the main parameters of etch-pit geometry, the track length, the axes of a surface track opening, the track profile and the track contour can be calculated. The application of the theory of etch-track evolution is demonstrated with selected practical problems. Attention is paid to certain questions related to the determination of unknown track parameters and calculation of surface track sizes. Finally, the theory is extended to the description of the perforation and etch-hole evolution process in thin detectors, which is of particular interest for track radiography and nuclear filter production. (author)

  14. SEMICONDUCTOR TECHNOLOGY: Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

    Science.gov (United States)

    Yongliang, Li; Qiuxia, Xu

    2010-03-01

    The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 °C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case.

  15. Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

    International Nuclear Information System (INIS)

    Li Yongliang; Xu Qiuxia

    2010-01-01

    The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 0 C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N 2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case. (semiconductor technology)

  16. Effect of Cl2- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Bouchoule, S.; Vallier, L.; Patriarche, G.; Chevolleau, T.; Cardinaud, C.

    2012-01-01

    A Cl 2 -HBr-O 2 /Ar inductively coupled plasma (ICP) etching process has been adapted for the processing of InP-based heterostructures in a 300-mm diameter CMOS etching tool. Smooth and anisotropic InP etching is obtained at moderate etch rate (∼600 nm/min). Ex situ x-ray energy dispersive analysis of the etched sidewalls shows that the etching anisotropy is obtained through a SiO x passivation mechanism. The stoichiometry of the etched surface is analyzed in situ using angle-resolved x-ray photoelectron spectroscopy. It is observed that Cl 2 -based ICP etching results in a significantly P-rich surface. The phosphorous layer identified on the top surface is estimated to be ∼1-1.3-nm thick. On the other hand InP etching in HBr/Ar plasma results in a more stoichiometric surface. In contrast to the etched sidewalls, the etched surface is free from oxides with negligible traces of silicon. Exposure to ambient air of the samples submitted to Cl 2 -based chemistry results in the complete oxidation of the P-rich top layer. It is concluded that a post-etch treatment or a pure HBr plasma step may be necessary after Cl 2 -based ICP etching for the recovery of the InP material.

  17. Metallographic examination of TD-nickel base alloys. [thermal and chemical etching technique evaluation

    Science.gov (United States)

    Kane, R. D.; Petrovic, J. J.; Ebert, L. J.

    1975-01-01

    Techniques are evaluated for chemical, electrochemical, and thermal etching of thoria dispersed (TD) nickel alloys. An electrochemical etch is described which yielded good results only for large grain sizes of TD-nickel. Two types of thermal etches are assessed for TD-nickel: an oxidation etch and vacuum annealing of a polished specimen to produce an etch. It is shown that the first etch was somewhat dependent on sample orientation with respect to the processing direction, the second technique was not sensitive to specimen orientation or grain size, and neither method appear to alter the innate grain structure when the materials were fully annealed prior to etching. An electrochemical etch is described which was used to observe the microstructures in TD-NiCr, and a thermal-oxidation etch is shown to produce better detail of grain boundaries and to have excellent etching behavior over the entire range of grain sizes of the sample.

  18. Metal detector technology data base

    Energy Technology Data Exchange (ETDEWEB)

    Porter, L.K.; Gallo, L.R.; Murray, D.W.

    1990-08-01

    The tests described in this report were conducted to obtain information on the effects target characteristics have on portal type metal detector response. A second purpose of the tests was to determine the effect of detector type and settings on the detection of the targets. Although in some cases comparison performance of different types and makes of metal detectors is found herein, that is not the primary purpose of the report. Further, because of the many variables that affect metal detector performance, the information presented can be used only in a general way. The results of these tests can show general trends in metal detection, but do little for making accurate predictions as to metal detector response to a target with a complex shape such as a handgun. The shape of an object and its specific metal content (both type and treatment) can have a significant influence on detection. Thus it should not be surprising that levels of detection for a small 100g stainless steel handgun are considerably different than for detection of the 100g stainless steel right circular cylinder that was used in these tests. 7 figs., 1 tab.

  19. Nanoporous polymeric nanofibers based on selectively etched PS-b-PDMS block copolymers.

    Science.gov (United States)

    Demirel, Gokcen B; Buyukserin, Fatih; Morris, Michael A; Demirel, Gokhan

    2012-01-01

    One-dimensional nanoporous polymeric nanofibers have been fabricated within an anodic aluminum oxide (AAO) membrane by a facile approach based on selective etching of poly(dimethylsiloxane) (PDMS) domains in polystyrene-block-poly(dimethylsiloxane) (PS-b-PDMS) block copolymers that had been formed within the AAO template. It was observed that prior to etching, the well-ordered PS-b-PDMS nanofibers are solid and do not have any porosity. The postetched PS nanofibers, on the other hand, had a highly porous structure having about 20-50 nm pore size. The nanoporous polymeric fibers were also employed as a drug carrier for the native, continuous, and pulsatile drug release using Rhodamine B (RB) as a model drug. These studies showed that enhanced drug release and tunable drug dosage can be achieved by using ultrasound irradiation. © 2011 American Chemical Society

  20. Sub-micrometer-scale patterning on Zr-based metallic glass using focused ion beam irradiation and chemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Kawasegi, Noritaka [Graduate School of Science and Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Morita, Noboru [Graduate School of Science and Engineering for Research, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Yamada, Shigeru [Graduate School of Science and Engineering for Research, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Takano, Noboru [Graduate School of Science and Engineering for Research, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Oyama, Tatsuo [Department of Mechanical and Intellectual Systems Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Ashida, Kiwamu [Advanced Manufacturing Research Institute, National Institute of Advanced Industrial Science and Technology, 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564 (Japan); Momota, Sadao [Department of Intelligent Mechanical Systems Engineering, Kochi University of Technology, 185 Tosayamada, Kochi 782-8502 (Japan); Taniguchi, Jun [Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510 (Japan); Miyamoto, Iwao [Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510 (Japan); Ofune, Hitoshi [YKK Corporation, 200 Yoshida, Kurobe, Toyama 938-8601 (Japan)

    2007-09-19

    This report describes a method of sub-micrometer-scale rapid patterning on a Zr-based metallic glass surface using a combination of focused ion beam irradiation and wet chemical etching. We found that a Zr-based metallic glass surface irradiated with Ga{sup +} ions could be selectively etched; a concave structure with a width and depth of several tens to hundreds of nanometers rapidly formed in the irradiated area. Moreover, we determined that the etching was enhanced by the presence of Ga{sup +} ions rather than a change in the crystal structure, and the structure could be fabricated while the substrate remained amorphous. The shape of the structure was principally a function of the dose and the etch time.

  1. GPU based 3D feature profile simulation of high-aspect ratio contact hole etch process under fluorocarbon plasmas

    Science.gov (United States)

    Chun, Poo-Reum; Lee, Se-Ah; Yook, Yeong-Geun; Choi, Kwang-Sung; Cho, Deog-Geun; Yu, Dong-Hun; Chang, Won-Seok; Kwon, Deuk-Chul; Im, Yeon-Ho

    2013-09-01

    Although plasma etch profile simulation has been attracted much interest for developing reliable plasma etching, there still exist big gaps between current research status and predictable modeling due to the inherent complexity of plasma process. As an effort to address this issue, we present 3D feature profile simulation coupled with well-defined plasma-surface kinetic model for silicon dioxide etching process under fluorocarbon plasmas. To capture the realistic plasma surface reaction behaviors, a polymer layer based surface kinetic model was proposed to consider the simultaneous polymer deposition and oxide etching. Finally, the realistic plasma surface model was used for calculation of speed function for 3D topology simulation, which consists of multiple level set based moving algorithm, and ballistic transport module. In addition, the time consumable computations in the ballistic transport calculation were improved drastically by GPU based numerical computation, leading to the real time computation. Finally, we demonstrated that the surface kinetic model could be coupled successfully for 3D etch profile simulations in high-aspect ratio contact hole plasma etching.

  2. Radiation detectors based by polymer materials

    International Nuclear Information System (INIS)

    Cherestes, Margareta; Cherestes, Codrut; Constantinescu, Livia

    2004-01-01

    Scintillation counters make use of the property of certain chemical compounds to emit short light pulses after excitation produced by the passage of charged particles or photons of high energy. These flashes of light are detected by a photomultiplier tube that converts the photons into a voltage pulse. The light emitted from the detector also can be collected, focussed and dispersed by a CCD detector. The study of the evolution of the light emission and of the radiation damage under irradiation is a primary topic in the development of radiation hard polymer based scintillator. Polymer scintillator thin films are used in monitoring radiation beam intensities and simultaneous counting of different radiations. Radiation detectors have characteristics which depend on: the type of radiation, the energy of radiation, and the material of the detector. Three types of polymer thin films were studied: a polyvinyltoluene based scintillator, fluorinated polyimide and PMMA. (authors)

  3. Ageing effects on polymeric track detectors: studies of etched tracks at nano size scale using atomic force microscope

    International Nuclear Information System (INIS)

    Espinosa, G.; Golzarri, J. I.; Fragoso, R.; Vazquez L, C.; Saad, A. F.; El-Namrouty, A. A.; Fujii, M.

    2012-01-01

    Among several different techniques to analyze material surface, the use of Atomic Force Microscope is one of the finest method. As we know, the sensitivity to detect energetic ions is extremely affected during the storage time and conditions of the polymeric material used as a nuclear track detector. On the basis of the surface analysis of several track detector materials, we examined the detection sensitivity of these detectors exposed to alpha particles. The preliminary results revealed that the ageing effect on its sensitivity is very strong, that need to be considered on the routine applications or research experiments. The results are consistent with the experimental data in the literature. (Author)

  4. Norm based design of fault detectors

    DEFF Research Database (Denmark)

    Rank, Mike Lind; Niemann, Hans Henrik

    1999-01-01

    The design of fault detectors for fault detection and isolation (FDI) in dynamic systems is considered in this paper from a norm based point of view. An analysis of norm based threshold selection is given based on different formulations of FDI problems. Both the nominal FDI problem as well...

  5. X-ray detectors based on image sensors

    International Nuclear Information System (INIS)

    Costa, A.P.R.

    1983-01-01

    X-ray detectors based on image sensors are described and a comparison is made between the advantages and the disadvantages of such a kind of detectors with the position sensitive detectors. (L.C.) [pt

  6. Plasmonic colorimetric sensors based on etching and growth of noble metal nanoparticles: Strategies and applications.

    Science.gov (United States)

    Zhang, Zhiyang; Wang, Han; Chen, Zhaopeng; Wang, Xiaoyan; Choo, Jaebum; Chen, Lingxin

    2018-08-30

    Plasmonic colorimetric sensors have emerged as a powerful tool in chemical and biological sensing applications due to the localized surface plasmon resonance (LSPR) extinction in the visible range. Among the plasmonic sensors, the most famous sensing mode is the "aggregation" plasmonic colorimetric sensor which is based on plasmon coupling due to nanoparticle aggregation. Herein, this review focuses on the newly-developing plasmonic colorimetric sensing mode - the etching or the growth of metal nanoparticles induces plasmon changes, namely, "non-aggregation" plasmonic colorimetric sensor. This type of sensors has attracted increasing interest because of their exciting properties of high sensitivity, multi-color changes, and applicability to make a test strip. Of particular interest, the test strip by immobilization of nanoparticles on the substrate can avoid the influence of nanoparticle auto-aggregation and increase the simplicity in storage and use. Although there are many excellent reviews available that describe the advance of plasmonic sensors, limited attention has been paid to the plasmonic colorimetric sensors based on etching or growth of metal nanoparticles. This review highlights recent progress on strategies and application of "non-aggregation" plasmonic colorimetric sensors. We also provide some personal insights into current challenges associated with "non-aggregation" plasmonic colorimetric sensors and propose future research directions. Copyright © 2018 Elsevier B.V. All rights reserved.

  7. ICP dry etching ITO to improve the performance of GaN-based LEDs

    International Nuclear Information System (INIS)

    Meng Lili; Chen Yixin; Ma Li; Liu Zike; Shen Guangdi

    2011-01-01

    In order to improve the light efficiency of the conventional GaN-based light-emitting diodes (LEDs), the indium tin oxide (ITO) film is introduced as the current spreading layer and the light anti-reflecting layer on the p-GaN surface. There is a big problem with the ITO thin film's corrosion during the electrode preparation. In this paper, at least, the edge of the ITO film was lateral corroded 3.5 μm width, i.e. 6.43%-1/3 of ITO film's area. An optimized simple process, i.e. inductively couple plasma (ICP), was introduced to solve this problem. The ICP process not only prevented the ITO film from lateral corrosion, but also improved the LED's light intensity and device performance. The edge of the ITO film by ICP dry etching is steep, and the areas of ITO film are whole. Compared with the chip by wet etching, the areas of light emission increase by 6.43% at least and the chip's lop values increase by 45.9% at most. (semiconductor devices)

  8. Silicon-based photonic crystals fabricated using proton beam writing combined with electrochemical etching method.

    Science.gov (United States)

    Dang, Zhiya; Breese, Mark Bh; Recio-Sánchez, Gonzalo; Azimi, Sara; Song, Jiao; Liang, Haidong; Banas, Agnieszka; Torres-Costa, Vicente; Martín-Palma, Raúl José

    2012-07-23

    A method for fabrication of three-dimensional (3D) silicon nanostructures based on selective formation of porous silicon using ion beam irradiation of bulk p-type silicon followed by electrochemical etching is shown. It opens a route towards the fabrication of two-dimensional (2D) and 3D silicon-based photonic crystals with high flexibility and industrial compatibility. In this work, we present the fabrication of 2D photonic lattice and photonic slab structures and propose a process for the fabrication of 3D woodpile photonic crystals based on this approach. Simulated results of photonic band structures for the fabricated 2D photonic crystals show the presence of TE or TM gap in mid-infrared range.

  9. Dry Etching

    DEFF Research Database (Denmark)

    Stamate, Eugen; Yeom, Geun Young

    2016-01-01

    generation) to 2,200 × 2,500 mm (eighth generation), and the substrate size is expected to increase further within a few years. This chapter aims to present relevant details on dry etching including the phenomenology, materials to be etched with the different recipes, plasma sources fulfilling the dry...

  10. Study of surfactant-added TMAH for applications in DRIE and wet etching-based micromachining

    Science.gov (United States)

    Tang, B.; Shikida, M.; Sato, K.; Pal, P.; Amakawa, H.; Hida, H.; Fukuzawa, K.

    2010-06-01

    In this paper, etching anisotropy is evaluated for a number of different crystallographic orientations of silicon in a 0.1 vol% Triton-X-100 added 25 wt% tetramethylammonium hydroxide (TMAH) solution using a silicon hemisphere. The research is primarily aimed at developing advanced applications of wet etching in microelectromechanical systems (MEMS). The etching process is carried out at different temperatures in the range of 61-81 °C. The etching results of silicon hemisphere and different shapes of three-dimensional structures in {1 0 0}- and {1 1 0}-Si surfaces are analyzed. Significantly important anisotropy, different from a traditional etchant (e.g. pure KOH and TMAH), is investigated to extend the applications of the wet etching process in silicon bulk micromachining. The similar etching behavior of exact and vicinal {1 1 0} and {1 1 1} planes in TMAH + Triton is utilized selectively to remove the scalloping from deep reactive-ion etching (DRIE) etched profiles. The direct application of the present research is demonstrated by fabricating a cylindrical lens with highly smooth etched surface finish. The smoothness of a micro-lens at different locations is measured qualitatively by a scanning electron microscope and quantitatively by an atomic force microscope. The present paper provides a simple and effective fabrication method of the silicon micro-lens for optical MEMS applications.

  11. THE ATLAS INNER DETECTOR TRACK BASED ALIGNMENT

    CERN Document Server

    Marti i Garcia, Salvador; The ATLAS collaboration

    2018-01-01

    The alignment of the ATLAS Inner Detector is performed with a track-based alignment algorithm. Its goal is to provide an accurate description of the detector geometry such that track parameters are accurately determined and free from biases. Its software implementation is modular and configurable, with a clear separation of the alignment algorithm from the detector system specifics and the database handling. The alignment must cope with the rapid movements of the detector as well as with the slow drift of the different mechanical units. Prompt alignment constants are derived for every run at the calibration stage. These sets of constants are then dynamically split from the beginning of the run in many chunks, allowing to describe the tracker geometry as it evolves with time. The alignment of the Inner Detector is validated and improved by studying resonance decays (Z and J/psi to mu+mu-), as well as using information from the calorimeter system with the E/p method with electrons. A detailed study of these res...

  12. Pore fabrication in various silica-based nanoparticles by controlled etching

    KAUST Repository

    Zhao, Lan

    2010-07-20

    A novel method based on controlled etching was developed to fabricate nanopores on preformed silica nanoparticles (<100 nm in diameter). The obtained monodisperse nanoporous particles could form highly stable homogeneous colloidal solution. Fluorescent silica nanoparticles and magnetic silica-coated γ-Fe 2O 3 nanoparticles were investigated as examples to illustrate that this strategy could be generally applied to various silica-based functional nanoparticles. The results indicated that this method was effective for generating pores on these nanoparticles without altering their original functionalities. The obtained multifunctional nanoparticles would be useful for many biological and biomedical applications. These porous nanoparticles could also serve as building blocks to fabricate three-dimensionally periodic structures that have the potential to be used as photonic crystals. © 2010 American Chemical Society.

  13. Performance of B-10 based detectors

    Energy Technology Data Exchange (ETDEWEB)

    Boucher, Mathieu; Anderson, Tom; Johnson, Nathan; Mckinny, Kevin; Mcpheeters, Matthew [GE Measurement and Control - Reuter-Stokes, Twinsburg, Ohio (United States)

    2015-07-01

    Helium-3 gas-filled detectors have been used in nuclear safeguards applications, in homeland security neutron detection modules and in research for over 30 years. With the current shortage of {sup 3}He gas, GE's Reuter-Stokes business developed a {sup 10}B lined proportional counter and a {sup 10}B hybrid detector, in which a small amount of {sup 3}He is added to a 10B detector to enhance the neutron sensitivity. In 2010, GE's Reuter-Stokes successfully developed a commercial alternative to 3He gas-filled detectors for homeland security neutron detection modules based on 10B lined proportional counters. We will present the concept behind the {sup 10}B neutron detection modules, as drop-in replacement to existing 3He neutron detection modules deployed, and the timeline and development needed to get a fully commercial application. To ensure the highest quality, each {sup 10}B neutron detection unit is put through a series of tests: temperature cycles from -40 deg. C to +55 deg. C, vibration testing at levels up to 2.5 g from 10 Hz to 50 Hz in every direction, neutron sensitivity reaching up to 4.5 cps/(ng {sup 252}CF at 2 m), and gamma insensitivity with field reaching 1 Sv/hr. In 2013, GE's Reuter-Stokes developed the B10Plus+{sup R} detector, in which a small amount of {sup 3}He is added to a {sup 10}B lined proportional counter. Depending on the amount of {sup 3}He added, the B10Plus+{sup R} can more than double the neutron sensitivity compared to a {sup 10}B lined proportional counter. {sup 10}B lined proportional counters and B10Plus+{sup R} have excellent gamma rejection and excellent performance even at very high neutron flux. The gamma rejection and high neutron flux performance of these detectors are comparable, if not better, than traditional {sup 3}He proportional counters. GE's Reuter-Stokes business modelled, designed, built and tested prototype coincidence counters using the {sup 10}B lined detectors and the {sup 10}B hybrid

  14. Low-frequency magnetization processes in chemically etched Co-based amorphous ribbons

    International Nuclear Information System (INIS)

    Betancourt, I.; Martinez, L.A.; Valenzuela, R.

    2005-01-01

    In this report we present a study of the magnetization processes for Co-based amorphous ribbons at low frequencies (10 Hz-13 MHz) as a function of decreasing thicknesses attained by chemical etching. Reversible domain-wall bulging, characterized by initial permeability and relaxation frequency, was monitored by means of inductance measurements. The real part of inductance (proportional to initial permeability) exhibited a decreasing trend with diminishing ribbon thickness, together with an increasing tendency for the relaxation frequency. For high amplitude of the ac field (leading to domain-wall unpinning), reduced ribbon thickness showed a deleterious-enhancement effect on irreversible domain-wall displacement, which was observed for both real and imaginary inductance spectroscopic plots. Results are interpreted in terms of reduced domain-wall pinning distances resulting from thinner alloy samples

  15. Investigation on electrical tree propagation in polyethylene based on etching method

    Directory of Open Access Journals (Sweden)

    Zexiang Shi

    2017-11-01

    Full Text Available To investigate the characteristic of electrical tree propagation in semi-crystalline polymers, the low-density polyethylene (LDPE samples containing electrical trees are cut into slices by using ultramicrotome. Then the slice samples are etched by potassium permanganate etchant. Finally, the crystalline structure and the electrical tree propagation path in samples are observed by polarized light microscopy (PLM. According to the observation, the LDPE spherocrystal structure model is established on the basis of crystallization kinetics and morphology of polymers. And the electrical tree growth process in LDPE is discussed based on the free volume breakdown theory, the molecular chain relaxation theory, the electromechanical force theory, the thermal expansion effect and the space charge shielding effect.

  16. Deep glass etched microring resonators based on silica-on-silicon technology

    DEFF Research Database (Denmark)

    Ou, Haiyan; Rottwitt, Karsten; Philipp, Hugh Taylor

    2006-01-01

    Microring resonators fabricated on silica-on-silicon technology using deep glass etching are demonstrated. The fabrication procedures are introduced and the transmission spectrum of a resonator is presented.......Microring resonators fabricated on silica-on-silicon technology using deep glass etching are demonstrated. The fabrication procedures are introduced and the transmission spectrum of a resonator is presented....

  17. Fiber-Optic Refractometer Based on an Etched High-Q ?-Phase-Shifted Fiber-Bragg-Grating

    OpenAIRE

    Zhang, Qi; Ianno, Natale J.; Han, Ming

    2013-01-01

    We present a compact and highly-sensitive fiber-optic refractometer based on a high-Q p-phase-shifted fiber-Bragg-grating (pFBG) that is chemically etched to the core of the fiber. Due to the p phase-shift, a strong pFBG forms a high-Q optical resonator and the reflection spectrum features an extremely narrow notch that can be used for highly sensitivity refractive index measurement. The etched pFBG demonstrated here has a diameter of ~9.3 μm and a length of only 7 mm, leading to a refractive...

  18. Norm based Threshold Selection for Fault Detectors

    DEFF Research Database (Denmark)

    Rank, Mike Lind; Niemann, Henrik

    1998-01-01

    The design of fault detectors for fault detection and isolation (FDI) in dynamic systems is considered from a norm based point of view. An analysis of norm based threshold selection is given based on different formulations of FDI problems. Both the nominal FDI problem as well as the uncertain FDI...... problem are considered. Based on this analysis, a performance index based on norms of the involved transfer functions is given. The performance index allows us also to optimize the structure of the fault detection filter directly...

  19. Computational steering of GEM based detector simulations

    Science.gov (United States)

    Sheharyar, Ali; Bouhali, Othmane

    2017-10-01

    Gas based detector R&D relies heavily on full simulation of detectors and their optimization before final prototypes can be built and tested. These simulations in particular those with complex scenarios such as those involving high detector voltages or gas with larger gains are computationally intensive may take several days or weeks to complete. These long-running simulations usually run on the high-performance computers in batch mode. If the results lead to unexpected behavior, then the simulation might be rerun with different parameters. However, the simulations (or jobs) may have to wait in a queue until they get a chance to run again because the supercomputer is a shared resource that maintains a queue of other user programs as well and executes them as time and priorities permit. It may result in inefficient resource utilization and increase in the turnaround time for the scientific experiment. To overcome this issue, the monitoring of the behavior of a simulation, while it is running (or live), is essential. In this work, we employ the computational steering technique by coupling the detector simulations with a visualization package named VisIt to enable the exploration of the live data as it is produced by the simulation.

  20. Transmission-enabled fiber Fabry-Perot cavity based on a deeply etched slotted micromirror.

    Science.gov (United States)

    Othman, Muhammad A; Sabry, Yasser M; Sadek, Mohamed; Nassar, Ismail M; Khalil, Diaa A

    2018-06-01

    In this work, we report the analysis, fabrication, and characterization of an optical cavity built using a Bragg-coated fiber (BCF) mirror and a metal-coated microelectromechanical systems (MEMS) slotted micromirror, where the latter allows transmission output from the cavity. Theoretical modeling, using Fourier optics analysis for the cavity response based on tracing the propagation of light back and forth between the mirrors, is presented. Detailed simulation analysis is carried out for the spectral response of the cavity under different design conditions. MEMS chips of the slotted micromirror are fabricated using deep reactive ion etching of a silicon-on-insulator substrate with different device-etching depths of 150 μm and 80 μm with aluminum and gold metal coating, respectively. The cavity is characterized as an optical filter using a BCF with reflectivity that is larger than 95% in a 300 nm range across the E-band and the L-band. Versatile filter characteristics were obtained for different values of the MEMS micromirror slit width and cavity length. A free spectral range (FSR) of about 33 nm and a quality factor of about 196 were obtained for a 5.5 μm width aluminum slit, while an FSR of about 148 nm and a quality factor of about 148 were obtained for a 1.5 μm width gold slit. The presented structure opens the door for wide spectral response transmission-type MEMS filters.

  1. Precise mass detector based on carbon nanooscillator

    Energy Technology Data Exchange (ETDEWEB)

    Lukashenko, S., E-mail: lukashenko13@mail.ru; Golubok, A. [Department of Nanotechnology and Material Science, ITMO University, Kronverskiy av. 49, 192000, St. Petersburg (Russian Federation); Institute for Analytical Instrumentation of RAS, Rizhsky pr 26, St. Petersburg, 190103 (Russian Federation); Komissarenko, F. [Department of Nanotechnology and Material Science, ITMO University, Kronverskiy av. 49, 192000, St. Petersburg (Russian Federation); Academic University, Russian Academy of Sciences, ul. Khlopina 8/3, 194021, St. Petersburg (Russian Federation); Mukhin, I. [Academic University, Russian Academy of Sciences, ul. Khlopina 8/3, 194021, St. Petersburg (Russian Federation); Sapozhnikov, I. [Institute for Analytical Instrumentation of RAS, Rizhsky pr 26, St. Petersburg, 190103 (Russian Federation); Veniaminov, A. [Centre for Information Optical Technologies, ITMO University, Birzhevaya ln. 14-16, 199034, St. Petersburg (Russian Federation); Lysak, V. [Department of Nanotechnology and Material Science, ITMO University, Kronverskiy av. 49, 192000, St. Petersburg (Russian Federation)

    2016-06-17

    Precise mass detectors based on an amorphous carbon nanowires, which localized on the top of a tungsten tip were fabricated and investigated. The nanowires were grown in the scanning electron microscope (SEM) chamber using focused electron beam technique. The movement trajectories and amplitude-frequency characteristics of the carbon nanowire oscillators were visualized at low and ambient pressure using SEM and confocal laser scanning microscope (CLSM), respectevely. The SiO{sub 2} and TiO{sub 2} nanospheres were clamped on the top of the carbon nanowires. The manipulations of nanospheres were provided by means of dielectrophoretic force in SEM. The sensitivity of the mass detector based on the carbon nanowire oscillator was estimated.

  2. Fluorocarbon based atomic layer etching of Si_3N_4 and etching selectivity of SiO_2 over Si_3N_4

    International Nuclear Information System (INIS)

    Li, Chen; Metzler, Dominik; Oehrlein, Gottlieb S.; Lai, Chiukin Steven; Hudson, Eric A.

    2016-01-01

    Angstrom-level plasma etching precision is required for semiconductor manufacturing of sub-10 nm critical dimension features. Atomic layer etching (ALE), achieved by a series of self-limited cycles, can precisely control etching depths by limiting the amount of chemical reactant available at the surface. Recently, SiO_2 ALE has been achieved by deposition of a thin (several Angstroms) reactive fluorocarbon (FC) layer on the material surface using controlled FC precursor flow and subsequent low energy Ar"+ ion bombardment in a cyclic fashion. Low energy ion bombardment is used to remove the FC layer along with a limited amount of SiO_2 from the surface. In the present article, the authors describe controlled etching of Si_3N_4 and SiO_2 layers of one to several Angstroms using this cyclic ALE approach. Si_3N_4 etching and etching selectivity of SiO_2 over Si_3N_4 were studied and evaluated with regard to the dependence on maximum ion energy, etching step length (ESL), FC surface coverage, and precursor selection. Surface chemistries of Si_3N_4 were investigated by x-ray photoelectron spectroscopy (XPS) after vacuum transfer at each stage of the ALE process. Since Si_3N_4 has a lower physical sputtering energy threshold than SiO_2, Si_3N_4 physical sputtering can take place after removal of chemical etchant at the end of each cycle for relatively high ion energies. Si_3N_4 to SiO_2 ALE etching selectivity was observed for these FC depleted conditions. By optimization of the ALE process parameters, e.g., low ion energies, short ESLs, and/or high FC film deposition per cycle, highly selective SiO_2 to Si_3N_4 etching can be achieved for FC accumulation conditions, where FC can be selectively accumulated on Si_3N_4 surfaces. This highly selective etching is explained by a lower carbon consumption of Si_3N_4 as compared to SiO_2. The comparison of C_4F_8 and CHF_3 only showed a difference in etching selectivity for FC depleted conditions. For FC accumulation conditions

  3. Stain-etched porous silicon nanostructures for multicrystalline silicon-based solar cells

    Science.gov (United States)

    Ben Rabha, M.; Hajji, M.; Belhadj Mohamed, S.; Hajjaji, A.; Gaidi, M.; Ezzaouia, H.; Bessais, B.

    2012-02-01

    In this paper, we study the optical, optoelectronic and photoluminescence properties of stain-etched porous silicon nanostructures obtained with different etching times. Special attention is given to the use of the stain-etched PS as an antireflection coating as well as for surface passivating capabilities. The surface morphology has been analyzed by scanning electron microscopy. The evolution of the Si-O and Si-H absorption bands was analyzed by Fourier transform infrared spectrometry before and after PS treatment. Results show that stain etching of the silicon surface drops the total reflectivity to about 7% in the 400-1100 nm wavelength range and the minority carrier lifetime enhances to about 48 μs.

  4. Evaluating the shear bond strength of enamel and dentin with or without etching: A comparative study between dimethacrylate-based and silorane-based adhesives

    Science.gov (United States)

    Hajizadeh, Hila; Nasseh, Atefeh; Rahmanpour, Naim

    2015-01-01

    Background Silorane-based composites and their specific self-etch adhesive were introduced to conquest the polymerization shrinkage of methacrylate-based composites. It has been shown that additional etching of enamel and dentin can improve the bond strength of self-etch methacrylate-based adhesives but this claim is not apparent about silorane-based adhesives. Our objective was to compare the shear bond strength (SBS) of enamel and dentin between silorane-based adhesive resin and a methacrylate-based resin with or without additional etching. Material and Methods 40 sound human premolars were prepared and divided into two groups: 1- Filtek P60 composite and Clearfil SE Bond adhesive; 2- Filtek P90 composite and Silorane adhesive. Each group divided into two subgroups: with or without additional etching. For additional etching, 37% acid phosphoric was applied before bonding procedure. A cylinder of the composite was bonded to the surface. After 24 hours storage and 500 thermo cycling between 5-55°C, shear bond strength was assessed with the cross head speed of 0.5 mm/min. Then, bonded surfaces were observed under stereomicroscope to determine the failure mode. Data were analyzed with two-way ANOVA and Fischer exact test. Results Shear bond strength of Filtek P60 composite was significantly higher than Filtek P90 composite both in enamel and dentin surfaces (Penamel or dentin for each of the composites (P>0.05). There was no interaction between composite type and additional etching (P>0.05). Failure pattern was mainly adhesive and no significant correlation was found between failure and composite type or additional etching (P>0.05). Conclusions Shear bond strength of methacrylate-based composite was significantly higher than silorane-based composite both in enamel and dentin surfaces and additional etching had no significant effect on shear bond strength in enamel or dentin for each of the composites. The mode of failure had no meaningful relation to the type of

  5. Study of the reduction in detection limits of track detectors used for {sup 10}B(n,α){sup 7}Li reaction rate measure through annealing and chemical etching experiments; Estudo da reducao nos limites de deteccao de detectores de tracos utilizados na medida de taxa de reacao {sup 10}B(n, α){sup 7}Li atraves de experimentos de annealing e ataque quimico

    Energy Technology Data Exchange (ETDEWEB)

    Vasconcellos, Herminiane L.; Smilgys, Barbara; Guedes, Sandro, E-mail: hluizav@ifi.unicamp.br [Universidade Estadual de Campinas (UNICAMP), SP (Brazil). Instituto de Fisica Gleb Wataghin; Castro, Vinicius A. [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Centro de Engenharia Nuclear

    2013-08-15

    The Boron Neutron Capture Therapy (BNCT) is an experimental radiotherapy for cancer treatment. It is based on {sup 10}B(n, α){sup 7}Li reaction, which can be measured by track detectors capable of recording events that strike them. With this recording, it is possible to determine the number of alpha particles and recoiling Lithium-7 nucleus, reaction products, and from this information, which amount of radiation dose a patient is exposed to. In this work, PADC detectors were characterized, irradiated at the IEA-R1 IPEN/CNEN reactor to assess the contribution of the{sup 10}B(n, α){sup 7}Li reaction and protons from fast neutron scattering with the elements that compounds the tissue. With the aim of reducing the proton background, the detectors were subjected to heating experiments at 80°C for periods in the range 0-100 hours. This was done in order to restore partially modified structure of the detector, causing a reduction in the size and density of tracks. This effect is known as annealing. For the visualization of tracks at microscope, detectors were made three chemical attacks with sodium hydroxide (NaOH) for 30, 60 and 90 minutes at 70°C. It was observed a reduction in the track density achieving a plateau heating time of 50 hours. For detectors that have not undergone annealing and were etched with another etchant, PEW solution, a reduction of 87% in track density was obtained. (author)

  6. Rapid prototyping of 2D glass microfluidic devices based on femtosecond laser assisted selective etching process

    Science.gov (United States)

    Kim, Sung-Il; Kim, Jeongtae; Koo, Chiwan; Joung, Yeun-Ho; Choi, Jiyeon

    2018-02-01

    Microfluidics technology which deals with small liquid samples and reagents within micro-scale channels has been widely applied in various aspects of biological, chemical, and life-scientific research. For fabricating microfluidic devices, a silicon-based polymer, PDMS (Polydimethylsiloxane), is widely used in soft lithography, but it has several drawbacks for microfluidic applications. Glass has many advantages over PDMS due to its excellent optical, chemical, and mechanical properties. However, difficulties in fabrication of glass microfluidic devices that requires multiple skilled steps such as MEMS technology taking several hours to days, impedes broad application of glass based devices. Here, we demonstrate a rapid and optical prototyping of a glass microfluidic device by using femtosecond laser assisted selective etching (LASE) and femtosecond laser welding. A microfluidic droplet generator was fabricated as a demonstration of a microfluidic device using our proposed prototyping. The fabrication time of a single glass chip containing few centimeter long and complex-shaped microfluidic channels was drastically reduced in an hour with the proposed laser based rapid and simple glass micromachining and hermetic packaging technique.

  7. Di- and tri-carboxylic-acid-based etches for processing high temperature superconducting thin films and related materials

    International Nuclear Information System (INIS)

    Ginley, D.S.; Barr, L.; Ashby, C.I.H.; Plut, T.A.; Urea, D.; Siegal, M.P.; Martens, J.S.; Johansson, M.E.

    1994-01-01

    The development of passive and active electronics from high-temperature superconducting thin films depends on the development of process technology capable of producing appropriate feature sizes without degrading the key superconducting properties. We present a new class of chelating etches based on di- and tri-carboxylic acids that are compatible with positive photoresists and can produce sub-micron feature sizes while typically producing increases the microwave surface resistance at 94 GHz by less than 10%. This simple etching process works well for both the Y--Ba--Cu--O and Tl--Ba--Ca--Cu--O systems. In addition, we demonstrate that the use of chelating etches with an activator such as HF allows the etching of related oxides such as LaAlO 3 , which is a key substrate material, and Pb(Zr 0.53 Ti 0.47 )O 3 (PZT) which is a key ferroelectric material for HTS and other applications such as nonvolatile memories

  8. Nanosecond laser-induced back side wet etching of fused silica with a copper-based absorber liquid

    Science.gov (United States)

    Lorenz, Pierre; Zehnder, Sarah; Ehrhardt, Martin; Frost, Frank; Zimmer, Klaus; Schwaller, Patrick

    2014-03-01

    Cost-efficient machining of dielectric surfaces with high-precision and low-roughness for industrial applications is still challenging if using laser-patterning processes. Laser induced back side wet etching (LIBWE) using UV laser pulses with liquid heavy metals or aromatic hydrocarbons as absorber allows the fabrication of well-defined, nm precise, free-form surfaces with low surface roughness, e.g., needed for optical applications. The copper-sulphatebased absorber CuSO4/K-Na-Tartrate/NaOH/formaldehyde in water is used for laser-induced deposition of copper. If this absorber can also be used as precursor for laser-induced ablation, promising industrial applications combining surface structuring and deposition within the same setup could be possible. The etching results applying a KrF excimer (248 nm, 25 ns) and a Nd:YAG (1064 nm, 20 ns) laser are compared. The topography of the etched surfaces were analyzed by scanning electron microscopy (SEM), white light interferometry (WLI) as well as laser scanning microscopy (LSM). The chemical composition of the irradiated surface was studied by energy-dispersive X-ray spectroscopy (EDX) and Fourier transform infrared spectroscopy (FT-IR). For the discussion of the etching mechanism the laser-induced heating was simulated with finite element method (FEM). The results indicate that the UV and IR radiation allows micro structuring of fused silica with the copper-based absorber where the etching process can be explained by the laser-induced formation of a copper-based absorber layer.

  9. Introducing etch kernels for efficient pattern sampling and etch bias prediction

    Science.gov (United States)

    Weisbuch, François; Lutich, Andrey; Schatz, Jirka

    2018-01-01

    Successful patterning requires good control of the photolithography and etch processes. While compact litho models, mainly based on rigorous physics, can predict very well the contours printed in photoresist, pure empirical etch models are less accurate and more unstable. Compact etch models are based on geometrical kernels to compute the litho-etch biases that measure the distance between litho and etch contours. The definition of the kernels, as well as the choice of calibration patterns, is critical to get a robust etch model. This work proposes to define a set of independent and anisotropic etch kernels-"internal, external, curvature, Gaussian, z_profile"-designed to represent the finest details of the resist geometry to characterize precisely the etch bias at any point along a resist contour. By evaluating the etch kernels on various structures, it is possible to map their etch signatures in a multidimensional space and analyze them to find an optimal sampling of structures. The etch kernels evaluated on these structures were combined with experimental etch bias derived from scanning electron microscope contours to train artificial neural networks to predict etch bias. The method applied to contact and line/space layers shows an improvement in etch model prediction accuracy over standard etch model. This work emphasizes the importance of the etch kernel definition to characterize and predict complex etch effects.

  10. A novel method for observation by unaided eyes of nitrogen ion tracks and angular distribution in a plasma focus device using 50 Hz–HV electrochemically-etched polycarbonate detectors

    International Nuclear Information System (INIS)

    Sohrabi, M.; Habibi, M.; Roshani, G.H.; Ramezani, V.

    2012-01-01

    A novel ion detection method has been developed and studied in this paper for the first time to detect and observe tracks of nitrogen ions and their angular distribution by unaided eyes in the Amirkabir 4 kJ plasma focus device (PFD). The method is based on electrochemical etching (ECE) of nitrogen ion tracks in 1 mm thick large area polycarbonate (PC) detectors. The ECE method employed a specially designed and constructed large area ECE chamber by applying a 50 Hz–high voltage (HV) generator under optimized ECE conditions. The nitrogen ion tracks and angular distribution were efficiently (constructed for this study) amplified to a point observable by the unaided eyes. The beam profile and angular distribution of nitrogen ion tracks in the central axes of the beam and two- and three-dimensional iso-ion track density distributions showing micro-beam spots were determined. The distribution of ion track density along the central axes versus angular position shows double humps around a dip at the 0° angular positions. The method introduced in this paper proved to be quite efficient for ion beam profile and characteristic studies in PFDs with potential for ion detection studies and other relevant dosimetry applications.

  11. Characterization of BJT-based particle detectors

    International Nuclear Information System (INIS)

    Piemonte, C.; Batignani, G.; Bettarini, S.; Bondioli, M.; Boscardin, M.; Bosisio, L.; Dalla Betta, G.-F.; Dittongo, S.; Forti, F.; Giorgi, M.; Gregori, P.; Rachevskaia, I.; Ronchin, S.; Zorzi, N.

    2004-01-01

    We report on the static and dynamic behavior of BJT-based particle detectors realized on high-resistivity silicon. Several prototypes, featuring different doping profiles and geometries, have been fabricated at ITC-irst (Trento, Italy). These devices have been thoroughly characterized from the electrical viewpoint, and, in order to understand the fundamental parameters of the structure, device simulations have been performed, whose results are in very good agreement with experimental data. Preliminary functional measurements have been carried out by using a 109Cd source excitation

  12. UV photooxidation induced structural and photoluminescence behaviors in vapor-etching based porous silicon

    International Nuclear Information System (INIS)

    Aouida, S.; Saadoun, M.; Ben Saad, K.; Bessais, B.

    2006-01-01

    In this paper, we investigate the effect of UV irradiation on Vapor-Etching (VE) based Porous Silicon (PS) structure and luminescence under controlled atmosphere (N 2 , air, O 2 ). The oxidation evolution is monitored by Fourier transform infrared (FTIR) spectroscopy. FTIR measurements show that the SiH x bond, initially present in the freshly prepared PS layers, decreased progressively with UV irradiation time until they completely disappear. We found that this treatment accelerates the oxidation process. SiO x structures appear and gradually become dominant as regard to the SiH x species, while UV irradiation is in progress. Generally, the photoluminescence (PL) intensity of the PS layer decreases instantaneously at the starting by the UV excitation and stabilizes after a period depending on the ambient gas and the specific surface area of the porous structure. Further UV exposure leads to a linear decrease of the PL intensity due to change of surface passivation from SiH x to O y SiH x . After less than 100 min of UV irradiation, the PL intensity exhibits an exponential decay. UV exposure in air and O 2 leads approximately to the same PL behavior, although faster PL intensity decrease was observed under O 2 -rich ambient. This was explained as being due to intense hydrogen desorption in presence of oxygen. Correlations of PL results with FTIR measurements show that surface passivation determine the electronic states of silicon nano-crystallites and influence the photoluminescence efficiency

  13. Simultaneous measurement of magnetic field and temperature based on an etched TCFMI cascaded with an FBG

    Science.gov (United States)

    Yan, Guofeng; Zhang, Liang; He, Sailing

    2016-04-01

    In this paper, a dual-parameter measurement scheme based on an etched thin core fiber modal interferometer (TCMI) cascaded with a fiber Bragg grating (FBG) is proposed and experimentally demonstrated for simultaneous measurement of magnetic field and temperature. The magnetic field and temperature responses of the packaged TCFMI were first investigated, which showed that the magnetic field sensitivity could be highly enhanced by decreasing of the TCF diameter and the temperature-cross sensitivities were up to 3-7 Oe/°C at 1550 nm. Then, the theoretical analysis and experimental demonstration of the proposed dual-parameter sensing scheme were conducted. Experimental results show that, the reflection of the FBG has a magnetic field intensity and temperature sensitivities of -0.017 dB/Oe and 0.133 dB/°C, respectively, while the Bragg wavelength of the FBG is insensitive to magnetic field and has a temperature sensitivity of 13.23 pm/°C. Thus by using the sensing matrix method, the intensity of the magnetic field and the temperature variance can be measured, which enables magnetic field sensing under strict temperature environments. In the on-off time response test, the fabricated sensor exhibited high repeatability and short response time of ∼19.4 s. Meanwhile the reflective sensing probe type is more compact and practical for applications in hard-to-reach conditions.

  14. A new configuration of the Moxon-Rae detector based on Si detector

    International Nuclear Information System (INIS)

    Niu, H.; Hsu, J.Y.; Liang, J.H.; Yuan, L.G.

    2002-01-01

    A new Moxon-Rae detector configuration based on Si semiconductor detector was proposed in this paper. Three γ-ray sources, 137 Cs, 60 Co, and 24 Na, were employed to make actual measurements using the new Moxon-Rae detector. The measured pulse height spectra and detection efficiencies were compared with the EGS4 simulated values. The results revealed that the proposed new configuration is indeed a successful method and specially a useful technique for higher energy γ-ray measurement

  15. Influence of voids in the hybrid layer based on self-etching adhesive systems: a 3-D FE analysis

    Directory of Open Access Journals (Sweden)

    Ana Paula Martini

    2009-01-01

    Full Text Available The presence of porosities at the dentin/adhesive interface has been observed with the use of new generation dentin bonding systems. These porosities tend to contradict the concept that etching and hybridization processes occur equally and simultaneously. Therefore, the aim of this study was to evaluate the micromechanical behavior of the hybrid layer (HL with voids based on a self-etching adhesive system using 3-D finite element (FE analysis. MATERIAL AND METHODS: Three FE models (Mr were built: Mr, dentin specimen (41x41x82 μm with a regular and perfect (i.e. pore-free HL based on a self-etching adhesive system, restored with composite resin; Mp, similar to M, but containing 25% (v/v voids in the HL; Mpp, similar to Mr, but containing 50% (v/v voids in the HL. A tensile load (0.03N was applied on top of the composite resin. The stress field was obtained by using Ansys Workbench 10.0. The nodes of the base of the specimen were constrained in the x, y and z axes. The maximum principal stress (σmax was obtained for all structures at the dentin/adhesive interface. RESULTS: The Mpp showed the highest peak of σmax in the HL (32.2 MPa, followed by Mp (30 MPa and Mr (28.4 MPa. The stress concentration in the peritubular dentin was high in all models (120 MPa. All other structures positioned far from voids showed similar increase of stress. CONCLUSION: Voids incorporated into the HL raised the σmax in this region by 13.5%. This behavior might be responsible for lower bond strengths of self-etching and single-bottle adhesives, as reported in the literature.

  16. Chemical etching of Tungsten thin films for high-temperature surface acoustic wave-based sensor devices

    Energy Technology Data Exchange (ETDEWEB)

    Spindler, M., E-mail: m.spindler@ifw-dresden.de [IFW Dresden, SAWLab Saxony, P.O. Box 270116, D-01171 Dresden (Germany); Herold, S.; Acker, J. [BTU Cottbus – Senftenberg, Faculty of Sciences, P.O. Box 101548, 01968 Senftenberg (Germany); Brachmann, E.; Oswald, S.; Menzel, S.; Rane, G. [IFW Dresden, SAWLab Saxony, P.O. Box 270116, D-01171 Dresden (Germany)

    2016-08-01

    Surface acoustic wave devices are widely used as wireless sensors in different application fields. Recent developments aimed to utilize those devices as temperature sensors even in the high temperature range (T > 300 °C) and in harsh environmental conditions. Therefore, conventional materials, which are used for the substrate and for the interdigital transducer finger electrodes such as multilayers or alloys based on Al or Cu have to be exchanged by materials, which fulfill some important criteria regarding temperature related effects. Electron beam evaporation as a standard fabrication method is not well applicable for depositing high temperature stable electrode materials because of their very high melting points. Magnetron sputtering is an alternative deposition process but is also not applicable for lift-off structuring without any further improvement of the structuring process. Due to a relatively high Ar gas pressure of about 10{sup −1} Pa, the sidewalls of the photoresist line structures are also covered by the metallization, which subsequently prevents a successful lift-off process. In this study, we investigate the chemical etching of thin tungsten films as an intermediate step between magnetron sputtering deposition of thin tungsten finger electrodes and the lift-off process to remove sidewall covering for a successful patterning process of interdigital transducers. - Highlights: • We fabricated Tungsten SAW Electrodes by magnetron sputtering technology. • An etching process removes sidewall covering of photoresist, which allows lift-off. • Tungsten etching rates based on a hydrogen peroxide solutions were determined.

  17. Fiber-optic refractometer based on an etched high-Q π-phase-shifted fiber-Bragg-grating.

    Science.gov (United States)

    Zhang, Qi; Ianno, Natale J; Han, Ming

    2013-07-10

    We present a compact and highly-sensitive fiber-optic refractometer based on a high-Q π-phase-shifted fiber-Bragg-grating (πFBG) that is chemically etched to the core of the fiber. Due to the p phase-shift, a strong πFBG forms a high-Q optical resonator and the reflection spectrum features an extremely narrow notch that can be used for highly sensitivity refractive index measurement. The etched πFBG demonstrated here has a diameter of ~9.3 μm and a length of only 7 mm, leading to a refractive index responsivity of 2.9 nm/RIU (RIU: refractive index unit) at an ambient refractive index of 1.318. The reflection spectrum of the etched πFBG features an extremely narrow notch with a linewidth of only 2.1 pm in water centered at ~1,550 nm, corresponding to a Q-factor of 7.4 × 10(5), which allows for potentially significantly improved sensitivity over refractometers based on regular fiber Bragg gratings.

  18. Fiber-Optic Refractometer Based on an Etched High-Q π-Phase-Shifted Fiber-Bragg-Grating

    Directory of Open Access Journals (Sweden)

    Ming Han

    2013-07-01

    Full Text Available We present a compact and highly-sensitive fiber-optic refractometer based on a high-Q p-phase-shifted fiber-Bragg-grating (pFBG that is chemically etched to the core of the fiber. Due to the p phase-shift, a strong pFBG forms a high-Q optical resonator and the reflection spectrum features an extremely narrow notch that can be used for highly sensitivity refractive index measurement. The etched pFBG demonstrated here has a diameter of ~9.3 μm and a length of only 7 mm, leading to a refractive index responsivity of 2.9 nm/RIU (RIU: refractive index unit at an ambient refractive index of 1.318. The reflection spectrum of the etched pFBG features an extremely narrow notch with a linewidth of only 2.1 pm in water centered at ~1,550 nm, corresponding to a Q-factor of 7.4 ´ 105, which allows for potentially significantly improved sensitivity over refractometers based on regular fiber Bragg gratings.

  19. On the long standing question of nuclear track etch induction time: Surface-cap model

    International Nuclear Information System (INIS)

    Rana, Mukhtar Ahmed

    2008-01-01

    Using a systematic set of experiments, nuclear track etch induction time measurements in a widely used CR-39 detector were completed for accessible track-forming particles (fission fragments, 5.2 MeV alpha particles and 5.9 MeV antiprotons). Results of the present work are compared with appropriately selected published results. The possibility of the use of etch induction time for charged particle identification is evaluated. Analysis of experimental results along with the use of well-established theoretical concepts yielded a model about delay in the start of chemical etching of nuclear tracks. The suggested model proposes the formation of a surface-cap (top segment) in each nuclear track consisting of chemically modified material with almost same or even higher resistance to chemical etching compared with bulk material of the track detector. Existing track formation models are reviewed very briefly, which provide one of the two bases of the proposed model. The other basis of the model is the general behavior of hot or energised material having a connection with an environment containing a number of species like ordinary air. Another reason for the delay in the start of etching is suggested as the absence of localization of etching atoms/molecules, which is present during etching at depth along the latent track

  20. Effect of etching with distinct hydrofluoric acid concentrations on the flexural strength of a lithium disilicate-based glass ceramic.

    Science.gov (United States)

    Prochnow, Catina; Venturini, Andressa B; Grasel, Rafaella; Bottino, Marco C; Valandro, Luiz Felipe

    2017-05-01

    This study examined the effects of distinct hydrofluoric acid concentrations on the mechanical behavior of a lithium disilicate-based glass ceramic. Bar-shaped specimens were produced from ceramic blocks (e.max CAD, Ivoclar Vivadent). The specimens were polished, chamfered, and sonically cleaned in distilled water. The specimens were randomly divided into five groups (n = 23). The HF1, HF3, HF5, and HF10 specimens were etched for 20 s with acid concentrations of 1%, 3%, 5%, and 10%, respectively, while the SC (control) sample was untreated. The etched surfaces were evaluated using a scanning electron microscope and an atomic force microscope. Finally, the roughness was measured, and 3-point bending flexural tests were performed. The data were analyzed using one-way analysis of variance (ANOVA) and Tukey's test (α = 0.05). The Weibull modulus and characteristic strength were also determined. No statistical difference in the roughness and flexural strength was determined among the groups. The structural reliabilities (Weilbull moduli) were similar for the tested groups; however, the characteristic strength of the HF1 specimen was greater than that of the HF10 specimen. Compared with the untreated ceramic, the surface roughness and flexural strength of the ceramic were unaffected upon etching, regardless of the acid concentration. © 2016 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 105B: 885-891, 2017. © 2016 Wiley Periodicals, Inc.

  1. Effective refractive index modulation based optical fiber humidity sensor employing etched fiber Bragg grating

    Science.gov (United States)

    Mundendhar, Pathi; Khijwania, Sunil K.

    2015-09-01

    Relative humidity (RH) sensor employing etched fiber Bragg grating (FBG) is reported where RH variations are captured using effective-index-modulation, rather than traditional strain-modulation. Additionly, linear sensor response over wide dynamic range with optimum characteristics is focused. Comprehensive experimental investigation is carried out for the sensor that comprises uniformly etched cladding in the FBG region. Obtained results are observed to be in agreement with the theoretical analysis. Sensor response is observed to be linear over dynamic range 3-94%RH with ~ 0.082 pm/%RH sensitivity, ~0.6%RH resolution, ~ +/-2.5%RH accuracy, ~ +/-0.2 pm average discrepancy and ~ 0.2s response time during humidification/desiccation.

  2. Micro-fabricated packed gas chromatography column based on laser etching technology.

    Science.gov (United States)

    Sun, J H; Guan, F Y; Zhu, X F; Ning, Z W; Ma, T J; Liu, J H; Deng, T

    2016-01-15

    In this work, a micro packed gas chromatograph column integrated with a micro heater was fabricated by using laser etching technology (LET) for analyzing environmental gases. LET is a powerful tool to etch deep well-shaped channels on the glass wafer, and it is the most effective way to increase depth of channels. The fabricated packed GC column with a length of over 1.6m, to our best knowledge, which is the longest so far. In addition, the fabricated column with a rectangular cross section of 1.2mm (depth) × 0.6mm (width) has a large aspect ratio of 2:1. The results show that the fabricated packed column had a large sample capacity, achieved a separation efficiency of about 5800 plates/m and eluted highly symmetrical Gaussian peaks. Copyright © 2015 Elsevier B.V. All rights reserved.

  3. Recent Developments in GEM-Based Neutron Detectors

    International Nuclear Information System (INIS)

    Saenboonruang, K.

    2014-01-01

    The gas electron multiplier (GEM) detector is a relatively new gaseous detector that has been used for less than 20 years. Since the discovery in 1997 by F. Sauli, the GEM detector has shown excellent properties including high rate capability, excellent resolutions, low discharge probability, and excellent radiation hardness. These promising properties have led the GEM detector to gain popularity and attention amongst physicists and researchers. In particular, the GEM detector can also be modified to be used as a neutron detector by adding appropriate neutron converters. With properties stated above and the need to replace the expensive 3 He-based neutron detectors, the GEM-based neutron detector will be one of the most powerful and affordable neutron detectors. Applications of the GEM-based neutron detectors vary from researches in nuclear and particle physics, neutron imaging, and national security. Although several promising progresses and results have been shown and published in the past few years, further improvement is still needed in order to improve the low neutron detection efficiency (only a few percent) and to widen the possibilities for other uses.

  4. Determination of the depth of an etch pit through studies of diffraction rings

    Energy Technology Data Exchange (ETDEWEB)

    Basu, B. [Department of Physics, Bose Institute, 93/1 APC Road, Kolkata 700 009 (India); Centre for Astroparticle Physics and Space Science, Bose institute, Kolkata 700 091 (India); Dey, S.; Maulik, A. [Centre for Astroparticle Physics and Space Science, Bose institute, Kolkata 700 091 (India); Raha, Sibaji [Department of Physics, Bose Institute, 93/1 APC Road, Kolkata 700 009 (India); Centre for Astroparticle Physics and Space Science, Bose institute, Kolkata 700 091 (India); Saha, S. [Nuclear and Atomic Physics Division, Saha Institute of Nuclear Physics, Kolkata 700 064 (India); Saha, Swapan K. [Department of Physics, Bose Institute, 93/1 APC Road, Kolkata 700 009 (India); Centre for Astroparticle Physics and Space Science, Bose institute, Kolkata 700 091 (India)], E-mail: swapan@bosemain.boseinst.ac.in; Syam, D. [Department of Physics, Presidency College, Kolkata 700 073 (India)

    2009-04-15

    A Solid State Nuclear Track Detector (SSNTD) can be used to identify an impinging ion as well as to determine the energy of that ion. The track of the ion is made visible by chemically 'etching' the detector after exposure. By finding out the ratio of the track-etch rate (V{sub t}) to the bulk-etch rate (V{sub g}), together with the range of the ion in the detector, the identity and the energy of the ion can be ascertained. The required measurements can be conveniently made with the help of a microscope when the angle of incidence of the ion, with respect to the normal direction to the detector surface, is more than 15 deg.. For normal or near normal incidence, uncertainties plague the measurement of the depth of the etch pit and hence the range of the particle. Through this article we wish to suggest an alternative method of assessment, based on the observation of diffraction rings, of the depth of an etch pit.

  5. Microprocessor-based accelerating power level detector

    Energy Technology Data Exchange (ETDEWEB)

    Nagpal, M.; Zarecki, W.; Albrecht, J.C.

    1994-01-01

    An accelerating power level detector was built using state-of-the-art microprocessor technology at Powertech Labs Inc. The detector will monitor the real power flowing in two 300 kV transmission lines out of Kemano Hydroelectric Generating Station and will detect any sudden loss of load due to a fault on either line under certain pre-selected power flow conditions. This paper discusses the criteria of operation for the detector and its implementation details, including digital processing, hardware, and software.

  6. Radially Polarized Conical Beam from an Embedded Etched Fiber

    OpenAIRE

    Kalaidji , D.; Spajer , M.; Marthouret , N.; Grosjean , T.

    2009-01-01

    International audience; We propose a method for producing a conical beam based on the lateral refraction of the TM01 mode from a two-mode fiber after chemical etching of the cladding, and for controlling its radial polarization. The whole power of the guided mode is transferred to the refracted beam with low diffraction. Polarization control by a series of azimuthal detectors and a stress controller affords the transmission of a stabilized radial polarization through an optical fiber. A solid...

  7. The effect of various adhesives, enamel etching, and base treatment on the failure frequency of customized lingual brackets: a randomized clinical trial.

    Science.gov (United States)

    Mavreas, Dimitrios; Cuzin, Jean-François; Boonen, Guillaume; Vande Vannet, Bart

    2018-05-25

    The aim of this paper was to compare failure differences in precious metal customized lingual brackets bonded with three adhesive systems. Also, differences in failure of non-precious metal brackets with and without a silicatized base layer bonded with the same adhesive, as well as the influence of enamel etching prior to using a self-etching dual cure resin were explored. Five different groups were defined in a semi-randomized approach. Group 1 (IME): Maxcem Elite with 378 Incognito brackets and etched teeth, Group 2 (IMNE): Maxcem Elite with 193 Incognito brackets on non-etched teeth, Group 3 (INE): Nexus+Excite with 385 Incognito brackets, Group 4 (IRE): Relyx with 162 Incognito brackets, Group 5 (HRME) and Group 6 (HNRME): Maxcem Elite with 182 Harmony brackets with silicatized and non-slicatized bases respectively. Bracket failures were recorded over a 12-month period. The number of failures during the observation period was small in the various adhesives types of groups, as well as in HRME and HNRME groups, and the comparisons among those groups were non-significant (P > 0.05). A statistically significant difference (P brackets failure frequencies (rates) are not different for the three adhesive materials tested. 2. Eliminating the etching stage when using self-etch/self-adhesive adhesives, may lead to a dramatic increase in the failure rates. 3. Silicoating of stainless steel customized lingual brackets does not seem to influence the failure of the bonds.

  8. Spectral Irradiance Measurements Based on Detector

    International Nuclear Information System (INIS)

    Lima, M S; Menegotto, T; Duarte, I; Da Silva, T Ferreira; Alves, L C; Alvarenga, A D; Almeida, G B; Couceiro, I B; Teixeira, R N

    2015-01-01

    This paper presents the preliminary results of the realization of absolute spectral irradiance scale at INMETRO in the ultraviolet, visible and infrared regions using filter radiometers as secondary standards. In the construction of these instruments are used, at least, apertures, interference filters and a trap detector. In the assembly of the trap detectors it was necessary to characterize several photocells in spatial uniformity and shunt resistance. All components were calibrated and these results were analyzed to mount the filter radiometer

  9. Fabry-Perot interferometer fiber tip sensor based on a glass microsphere glued at the etched end of multimode fiber

    Science.gov (United States)

    Chen, Weiping P.; Wang, Dongning N.; Xu, Ben; Wang, Zhaokun K.; Zhao, Chun-Liu

    2017-05-01

    We demonstrate an optical Fabry-Perot interferometer fiber tip sensor based on a glass microsphere glued at the etched end of a multimode fiber. The fiber device is miniature and robust, with a convenient reflection mode of operation, a high temperature sensitivity of 202.6 pm/°C within the range from 5°C to 90°C, a good refractive index sensitivity of ˜119 nm/RIU within the range from 1.331 to 1.38, and a gas pressure sensitivity of 0.19 dB/MPa.

  10. Study of Thermal Electrical Modified Etching for Glass and Its Application in Structure Etching

    Directory of Open Access Journals (Sweden)

    Zhan Zhan

    2017-02-01

    Full Text Available In this work, an accelerating etching method for glass named thermal electrical modified etching (TEM etching is investigated. Based on the identification of the effect in anodic bonding, a novel method for glass structure micromachining is proposed using TEM etching. To validate the method, TEM-etched glasses are prepared and their morphology is tested, revealing the feasibility of the new method for micro/nano structure micromachining. Furthermore, two kinds of edge effect in the TEM and etching processes are analyzed. Additionally, a parameter study of TEM etching involving transferred charge, applied pressure, and etching roughness is conducted to evaluate this method. The study shows that TEM etching is a promising manufacture method for glass with low process temperature, three-dimensional self-control ability, and low equipment requirement.

  11. Optimized piranha etching process for SU8-based MEMS and MOEMS construction

    International Nuclear Information System (INIS)

    Holmes, Matthew; Keeley, Jared; Hurd, Katherine; Hawkins, Aaron; Schmidt, Holger

    2010-01-01

    We demonstrate the optimization of the concentration, temperature and cycling of a piranha (H 2 O 2 :H 2 SO 4 ) mixture that produces high yields while quickly etching hollow structures made using a highly crosslinked SU8 polymer sacrificial core. The effects of the piranha mixture on the thickness, refractive index and roughness of common micro-electromechanical systems and micro-opto-electromechanical systems fabrication materials (SiN, SiO 2 and Si) were determined. The effectiveness of the optimal piranha mixture was demonstrated in the construction of hollow anti-resonant reflecting optical waveguides

  12. Optimized piranha etching process for SU8-based MEMS and MOEMS construction

    Science.gov (United States)

    Holmes, Matthew; Keeley, Jared; Hurd, Katherine; Schmidt, Holger; Hawkins, Aaron

    2010-11-01

    We demonstrate the optimization of the concentration, temperature and cycling of a piranha (H2O2:H2SO4) mixture that produces high yields while quickly etching hollow structures made using a highly crosslinked SU8 polymer sacrificial core. The effects of the piranha mixture on the thickness, refractive index and roughness of common micro-electromechanical systems and micro-opto-electromechanical systems fabrication materials (SiN, SiO2 and Si) were determined. The effectiveness of the optimal piranha mixture was demonstrated in the construction of hollow anti-resonant reflecting optical waveguides.

  13. Optimized piranha etching process for SU8-based MEMS and MOEMS construction

    OpenAIRE

    Holmes, Matthew; Keeley, Jared; Hurd, Katherine; Schmidt, Holger; Hawkins, Aaron

    2010-01-01

    We demonstrate the optimization of the concentration, temperature and cycling of a piranha (H2O2:H2SO4) mixture that produces high yields while quickly etching hollow structures made using a highly crosslinked SU8 polymer sacrificial core. The effects of the piranha mixture on the thickness, refractive index and roughness of common micro-electromechanical systems and micro-opto-electromechanical systems fabrication materials (SiN, SiO2 and Si) were determined. The effectiveness of the optimal...

  14. Multifunctional Material Structures Based on Laser-Etched Carbon Nanotube Arrays

    Directory of Open Access Journals (Sweden)

    Aline Emplit

    2014-09-01

    Full Text Available High-power electronics in the transportation and aerospace sectors need size and weight reduction. Multifunctional and multistructured materials are currently being developed to couple electromagnetic (EM and thermal properties, i.e., shielding against electromagnetic impulsions, and thermal management across the thermal interface material (TIM. In this work, we investigate laser-machined patterned carbon nanotube (CNT micro-brushes as an alternative to metallic structures for driving simultaneously EM and heat propagation. The thermal and electromagnetic response of the CNT array is expected to be sensitive to the micro-structured pattern etched in the CNT brush.

  15. Radiation detector system having heat pipe based cooling

    Science.gov (United States)

    Iwanczyk, Jan S.; Saveliev, Valeri D.; Barkan, Shaul

    2006-10-31

    A radiation detector system having a heat pipe based cooling. The radiation detector system includes a radiation detector thermally coupled to a thermo electric cooler (TEC). The TEC cools down the radiation detector, whereby heat is generated by the TEC. A heat removal device dissipates the heat generated by the TEC to surrounding environment. A heat pipe has a first end thermally coupled to the TEC to receive the heat generated by the TEC, and a second end thermally coupled to the heat removal device. The heat pipe transfers the heat generated by the TEC from the first end to the second end to be removed by the heat removal device.

  16. New neutron detector based on micromegas technology for ADS projects

    International Nuclear Information System (INIS)

    Andriamonje, Samuel; Andriamonje, Gregory; Aune, Stephan; Ban, Gilles; Breaud, Stephane; Blandin, Christophe; Ferrer, Esther; Geslot, Benoit; Giganon, Arnaud; Giomataris, Ioannis; Jammes, Christian; Kadi, Yacine; Laborie, Philippe; Lecolley, Jean Francois; Pancin, Julien; Riallot, Marc; Rosa, Roberto; Sarchiapone, Lucia; Steckmeyer, Jean Claude; Tillier, Joel

    2006-01-01

    A new neutron detector based on Micromegas technology has been developed for the measurement of the simulated neutron spectrum in the ADS project. After the presentation of simulated neutron spectra obtained in the interaction of 140 MeV protons with the spallation target inside the TRIGA core, a full description of the new detector configuration is given. The advantage of this detector compared to conventional neutron flux detectors and the results obtained with the first prototype at the CELINA 14 MeV neutron source facility at CEA-Cadarache are presented. The future developments of operational Piccolo-Micromegas for fast neutron reactors are also described

  17. New neutron detector based on micromegas technology for ADS projects

    Energy Technology Data Exchange (ETDEWEB)

    Andriamonje, Samuel [CEA-Saclay, DSM/DAPNIA, F-91191 Gif-sur-Yvette (France)]. E-mail: sandriamonje@cea.fr; Andriamonje, Gregory [IXL-Universite Bordeaux 1-BAT. A31-351 cours de la Liberation-F-33405 Talence Cedex (France); Aune, Stephan [CEA-Saclay, DSM/DAPNIA, F-91191 Gif-sur-Yvette (France); Ban, Gilles [CNRS/IN2P3 LPC Caen, 6 Boulevard Marechal Juin, F-14050 Caen Cedex (France); Breaud, Stephane [CEA/DEN/Cadarache, 13108 Saint-Paul Lez Durance (France); Blandin, Christophe [CEA/DEN/Cadarache, 13108 Saint-Paul Lez Durance (France); Ferrer, Esther [CEA-Saclay, DSM/DAPNIA, F-91191 Gif-sur-Yvette (France); Geslot, Benoit [CEA/DEN/Cadarache, 13108 Saint-Paul Lez Durance (France); Giganon, Arnaud [CEA-Saclay, DSM/DAPNIA, F-91191 Gif-sur-Yvette (France); Giomataris, Ioannis [CEA-Saclay, DSM/DAPNIA, F-91191 Gif-sur-Yvette (France); Jammes, Christian [CEA/DEN/Cadarache, 13108 Saint-Paul Lez Durance (France); Kadi, Yacine [CERN CH 1211 Geneva (Switzerland); Laborie, Philippe [CNRS/IN2P3 LPC Caen, 6 Boulevard Marechal Juin, F-14050 Caen Cedex (France); Lecolley, Jean Francois [CNRS/IN2P3 LPC Caen, 6 Boulevard Marechal Juin, F-14050 Caen Cedex (France); Pancin, Julien [CEA-Saclay, DSM/DAPNIA, F-91191 Gif-sur-Yvette (France); Riallot, Marc [CEA-Saclay, DSM/DAPNIA, F-91191 Gif-sur-Yvette (France); Rosa, Roberto [ENEA-Casaccia, Via Anguillarese, 00060 Rome (Italy); Sarchiapone, Lucia [CERN CH 1211 Geneva (Switzerland); Steckmeyer, Jean Claude [CNRS/IN2P3 LPC Caen, 6 Boulevard Marechal Juin, F-14050 Caen Cedex (France); Tillier, Joel [CNRS/IN2P3 LPC Caen, 6 Boulevard Marechal Juin, F-14050 Caen Cedex (France)

    2006-06-23

    A new neutron detector based on Micromegas technology has been developed for the measurement of the simulated neutron spectrum in the ADS project. After the presentation of simulated neutron spectra obtained in the interaction of 140 MeV protons with the spallation target inside the TRIGA core, a full description of the new detector configuration is given. The advantage of this detector compared to conventional neutron flux detectors and the results obtained with the first prototype at the CELINA 14 MeV neutron source facility at CEA-Cadarache are presented. The future developments of operational Piccolo-Micromegas for fast neutron reactors are also described.

  18. Clinical dosimeter based on diamond detector

    International Nuclear Information System (INIS)

    Chervjakov, A.M.; Ljalina, L.I.; Ljutina, G.J.; Khrunov, V.S.; Martynov, S.S.; Popov, S.A.

    2002-01-01

    Full text: Diamond detectors have found application in the relative dosimetry and their parameters have been described elsewhere. Today, the exclusive producer of the diamond detector is the Institute of Physical and Technical Problems, Russia, and exclusive dealer is the PTW-Freiburg. The main features of the diamond detector are good long time stability, suitable range of the energy dependence for photon and electron beams in clinical use, independence of the measured date from temperature and pressure. The high sensitivity per volume unit of the diamond detector (1500 times higher than ionization chamber) allowed using detectors with very small volume (1-5 mm 3 ) and rather simple electronics for ionization current registration. The new dosimeter consists of the diamond detector itself, 40 m registration cable, pre-amplifier, micro-processor block for data handling and absorbed dose calculation using the calibration factor of diamond detector in terms of absorbed dose to water. Dosimeter has the possibility to work with PC using standard RS-232 interface. The main features of the dosimeter are as follows: the range of dose rate measurements for photon, electron and proton beams is within 0.01-1.0 Gy/s; the energy ranges for photons are 0.08-25 MeV, and 4-25 MeV for electrons, with energy dependence no more than ±2%; the main uncertainty of the dose measurements is within ±2%; the pre-irradiation dose for diamond detector is no more than 10 Gy; the sensitive volume of the used diamond detectors is within 1-5 mm 3 ; the weight of the dosimeter no more than 2 kg. The new dosimeter was evaluated at the Central Research Institute of Roentgenology and Radiology, St. Petersburg, Russia to verify its performance. The dosimeter was used as a reference instrument for dose measurements at Cobalt-60 unit, SL75-5 and SL-20 linear accelerators and the test results have shown that the device have met the specifications. It is planned to produce dosimeter as serial device by

  19. Coordinate sensitive detectors based on microchannel plates

    International Nuclear Information System (INIS)

    Gruntman, M.A.

    1984-01-01

    Coordinate-sensitive detectors (CSD) on the basis of microchannel plates permit to determine in a digital form the coordinates of every recorded particle and they are used in different fields of physical experiment. The sensitive surface diameter of such detectors can reach 10 cm, and spatial resolution - 10 μm. In the review provided CSD with microchannel plates are classified according to the ways of coordinate determination, different types of the detectors, pecUliarities of their design and electron flowsheet are described. It is pointed out that there are reasons for introduction of CSD into practice of laboratory physical investigations in various fields, where the particle recorded is electron or is able to form a secondary electron. It is attributed to nuclear physics, physics of electron and atom collisions, optics, mass-spectrometry, electron microscopy, X-ray analysis, investigation of surfaces

  20. Marginal microleakage of class V resin-based composite restorations bonded with six one-step self-etch systems

    Directory of Open Access Journals (Sweden)

    Alfonso Sánchez-Ayala

    2013-06-01

    Full Text Available This study compared the microleakage of class V restorations bonded with various one-step self-etching adhesives. Seventy class V resin-based composite restorations were prepared on the buccal and lingual surfaces of 35 premolars, by using: Clearfil S 3 Bond, G-Bond, iBond, One Coat 7.0, OptiBond All-In-One, or Xeno IV. The Adper Single Bond etch-and-rinse two-step adhesive was employed as a control. Specimens were thermocycled for 500 cycles in separate water baths at 5°C and 55°C and loaded under 40 to 70 N for 50,000 cycles. Marginal microleakage was measured based on the penetration of a tracer agent. Although the control showed no microleakage at the enamel margins, there were no differences between groups (p = 0.06. None of the adhesives avoided microleakage at the dentin margins, and they displayed similar performances (p = 0.76. When both margins were compared, iBond® presented higher microleakage (p < 0.05 at the enamel margins (median, 1.00; Q3–Q1, 1.25–0.00 compared to the dentin margins (median, 0.00; Q3–Q1, 0.25–0.00. The study adhesives showed similar abilities to seal the margins of class V restorations, except for iBond®, which presented lower performance at the enamel margin.

  1. Effect of chemical etching on the surface roughness of CdZnTe and CdMnTe gamma radiation detectors

    International Nuclear Information System (INIS)

    Hossain, A.; Babalola, S.; Bolotnikov, A.E.; Camarda, G.S.; Cui, Y.; Yang, G.; Guo, M.; Kochanowska, D.; Mycielski, A.; Burger, A.; James, R.B.

    2008-01-01

    Generally, mechanical polishing is performed to diminish the cutting damage followed by chemical etching to remove the remaining damage on crystal surfaces. In this paper, we detail the findings from our study of the effects of various chemical treatments on the roughness of crystal surfaces. We prepared several CdZnTe (CZT) and CdMnTe (CMT) crystals by mechanical polishing with 5 (micro)m and/or lower grits of Al 2 O 3 abrasive papers including final polishing with 0.05-(micro)m particle size alumina powder and then etched them for different periods with a 2%, 5% Bromine-Methanol (B-M) solution, and also with an E-solution (HNO 3 :H 2 O:Cr 2 O 7 ). The material removal rate (etching rate) from the crystals was found to be 10 (micro)m, 30 (micro)m, and 15 (micro)m per minute, respectively. The roughness of the resulting surfaces was determined by the Atomic Force Microscopy (AFM) to identify the most efficient surface processing method by combining mechanical and chemical polishing

  2. A DBN based anomaly targets detector for HSI

    Science.gov (United States)

    Ma, Ning; Wang, Shaojun; Yu, Jinxiang; Peng, Yu

    2017-10-01

    Due to the assumption that Hyperspectral image (HSI) should conform to Gaussian distribution, traditional Mahalanobis distance-based anomaly targets detectors perform poor because the assumption may not always hold. In order to solve those problems, a deep learning based detector, Deep Belief Network(DBN) anomaly detector(DBN-AD), was proposed to fit the unknown distribution of HSI by energy modeling, the reconstruction errors of this encode-decode processing are used for discriminating the anomaly targets. Experiments are implemented on real and synthesized HSI dataset which collection by Airborne Visible Infra-Red Imaging Spectrometer (AVIRIS). Comparing to classic anomaly detector, the proposed method shows better performance, it performs about 0.17 higher in Area Under ROC Curve (AUC) than that of Reed-Xiaoli detector(RXD) and Kernel-RXD (K-RXD).

  3. Solid state nuclear track detectors

    International Nuclear Information System (INIS)

    Medeiros, J.A.; Carvalho, M.L.C.P. de

    1992-12-01

    Solid state nuclear track detectors (SSNTD) are dielectric materials, crystalline or vitreous, which registers tracks of charged nuclear particles, like alpha particles or fission fragments. Chemical etching of the detectors origin tracks that are visible at the optical microscope: track etching rate is higher along the latent track, where damage due to the charged particle increase the chemical potential, and etching rate giving rise to holes, the etched tracks. Fundamental principles are presented as well as some ideas of main applications. (author)

  4. A spatial track formation model and its use for calculating etch-pit parameters of light nuclei

    International Nuclear Information System (INIS)

    Somogyi, G.; Scherzer, R.; Grabisch, K.; Enge, W.

    1976-01-01

    A generalized geometrical model of etch-pit formation in three dimensions is presented for nuclear particles entering isotropic solids at arbitrary angles of incidence. With this model one can calculate the relations between any particle parameter /Z = charge, M = mass, R = range, theta = angle of incidence/ and etching or track parameter /h = removed detector layer, L = track length, d = track diameter, etch-pit profile and contour/ for track etching rates varying monotonically along the trajectory of particles. Using a computer algorithm, calculations have been performed to study identification problems of nuclei of Z = 1-8 registered in a stack of polycarbonate sheets. For these calculations the etching rate ratio vs residual range curves were parametrized with a form of V -1 (R) = 1-Σasub(i) exp (- bsub(i)R) which does not involve the existence of a threshold for track registration. Particular attention was paid to the study of the evolution of etch-pit sizes for relatively high values of h. For this case, data are presented for the charge and isotope resolving power of the identification methods based on the relations L(R) of d(R). Calculations were also made to show the effect of the relative /parallel and opposite/ orientations between the directions of track etching and particle speed on etch-pit evolution. These studies offered new identification methods based on the determination of the curves L(parallel) vs L(opposite) and d(parallel) vs d(opposite), respectively. (orig.) [de

  5. Nanorods on surface of GaN-based thin-film LEDs deposited by post-annealing after photo-assisted chemical etching

    Science.gov (United States)

    Chen, Lung-Chien; Lin, Wun-Wei; Liu, Te-Yu

    2017-01-01

    This study investigates the optoelectronic characteristics of gallium nitride (GaN)-based thin-film light-emitting diodes (TF-LEDs) that are formed by a two-step transfer process that involves wet etching and post-annealing. In the two-step transfer process, GaN LEDs were stripped from sapphire substrates by the laser lift-off (LLO) method using a KrF laser and then transferred onto ceramic substrates. Ga-K nanorods were formed on the surface of the GaN-based TF-LEDs following photo-assisted chemical etching and photo-enhanced post-annealing at 100 °C for 1 min. As a result, the light output power of GaN-based TF-LEDs with wet etching and post-annealing was over 72% more than that of LEDs that did not undergo these treatments.

  6. A new kind of metal detector based on chaotic oscillator

    Science.gov (United States)

    Hu, Wenjing

    2017-12-01

    The sensitivity of a metal detector greatly depends on the identification ability to weak signals from the probe. In order to improve the sensitivity of metal detectors, this paper applies the Duffing chaotic oscillator to metal detectors based on its characteristic which is very sensitive to weak periodic signals. To make a suitable Duffing system for detectors, this paper computes two Lyapunov characteristics exponents of the Duffing oscillator, which help to obtain the threshold of the Duffing system in the critical state accurately and give quantitative criteria for chaos. Meanwhile, a corresponding simulation model of the chaotic oscillator is made by the Simulink tool box of Matlab. Simulation results shows that Duffing oscillator is very sensitive to sinusoidal signals in high frequency cases. And experimental results show that the measurable diameter of metal particles is about 1.5mm. It indicates that this new method can feasibly and effectively improve the metal detector sensitivity.

  7. Ethernet based data logger for gaseous detectors

    Science.gov (United States)

    Swain, S.; Sahu, P. K.; Sahu, S. K.

    2018-05-01

    A data logger is designed to monitor and record ambient parameters such as temperature, pressure and relative humidity along with gas flow rate as a function of time. These parameters are required for understanding the characteristics of gas-filled detectors such as Gas Electron Multiplier (GEM) and Multi-Wire Proportional Counter (MWPC). The data logger has different microcontrollers and has been interfaced to an ethernet port with a local LCD unit for displaying all measured parameters. In this article, the explanation of the data logger design, hardware, and software description of the master microcontroller and the DAQ system along with LabVIEW interface client program have been presented. We have implemented this device with GEM detector and displayed few preliminary results as a function of above parameters.

  8. Nuclear radiation detectors

    International Nuclear Information System (INIS)

    Kapoor, S.S.; Ramamurthy, V.S.

    1986-01-01

    The present monograph is intended to treat the commonly used detectors in the field of nuclear physics covering important developments of the recent years. After a general introduction, a brief account of interaction of radiation with matter relevant to the processes in radiation detection is given in Chapter II. In addition to the ionization chamber, proportional counters and Geiger Mueller counters, several gas-filled detectors of advanced design such as those recently developed for heavy ion physics and other types of studies have been covered in Chapter III. Semiconductor detectors are dealt with in Chapter IV. The scintillation detectors which function by sensing the photons emitted by the luminescence process during the interaction of the impinging radiation with the scintillation detector medium are described in Chapter V. The topic of neutron detectors is covered in Chapter VI, as in this case the emphasis is more on the method of neutron detection rather than on detector type. Electronic instrumentation related to signal pulse processing dealt with in Chapter VII. The track etch detectors based on the visualization of the track of the impinging charge particle have also been briefly covered in the last chapter. The scope of this monograph is confined to detectors commonly used in low and medium energy nuclear physics research and applications of nuclear techniques. The monograph is intended for post-graduate students and those beginning to work with the radiation detectors. (author)

  9. Special Nuclear Material Detection with a Water Cherenkov based Detector

    International Nuclear Information System (INIS)

    Sweany, M.; Bernstein, A.; Bowden, N.; Dazeley, S.; Svoboda, R.

    2008-01-01

    Fission events from Special Nuclear Material (SNM), such as highly enriched uranium or plutonium, produce a number of neutrons and high energy gamma-rays. Assuming the neutron multiplicity is approximately Poissonian with an average of 2 to 3, the observation of time correlations between these particles from a cargo container would constitute a robust signature of the presence of SNM inside. However, in order to be sensitive to the multiplicity, one would require a high total efficiency. There are two approaches to maximize the total efficiency; maximizing the detector efficiency or maximizing the detector solid angle coverage. The advanced detector group at LLNL is investigating one way to maximize the detector size. We are designing and building a water Cerenkov based gamma and neutron detector for the purpose of developing an efficient and cost effective way to deploy a large solid angle car wash style detector. We report on our progress in constructing a larger detector and also present preliminary results from our prototype detector that indicates detection of neutrons

  10. A LabVIEWTM-based detector testing system

    International Nuclear Information System (INIS)

    Yang Haori; Li Yuanjing; Wang Yi; Li Yulan; Li Jin

    2003-01-01

    The construction of a LabVIEW-based detector testing system is described in this paper. In this system, the signal of detector is magnified and digitized, so amplitude or time spectrum can be obtained. The Analog-to-Digital Converter is a peak-sensitive ADC based on VME bus. The virtual instrument constructed by LabVIEW can be used to acquire data, draw spectrum and save testing results

  11. Design of the flame detector based on pyroelectric infrared sensor

    Science.gov (United States)

    Liu, Yang; Yu, Benhua; Dong, Lei; Li, Kai

    2017-10-01

    As a fire detection device, flame detector has the advantages of short reaction time and long distance. Based on pyroelectric infrared sensor working principle, the passive pyroelectric infrared alarm system is designed, which is mainly used for safety of tunnel to detect whether fire occurred or not. Modelling and Simulation of the pyroelectric Detector Using Labview. An attempt was made to obtain a simple test platform of a pyroelectric detector which would make an excellent basis for the analysis of its dynamic behaviour. After many experiments, This system has sensitive response, high anti-interference ability and safe and reliable performance.

  12. THGEM based photon detector for Cherenkov imaging applications

    CERN Document Server

    Alexeev, M; Bradamante, F; Bressan, A; Chiosso, M; Ciliberti, P; Croci, G; Colantoni, M L; Dalla Torre, S; Duarte Pinto, S; Denisov, O; Diaz, V; Ferrero, A; Finger, M; Finger, M Jr; Fischer, H; Giacomini, G; Giorgi, M; Gobbo, B; Heinsius, F H; Herrmann, F; Jahodova, V; Königsmann, K; Lauser, L; Levorato, S; Maggiora, A; Martin, A; Menon, G; Nerling, F; Panzieri, D; Pesaro, G; Polak, J; Rocco, E; Ropelewski, L; Sauli, F; Sbrizzai, G; Schiavon, P; Schill, C; Schopferer, S; Slunecka, M; Sozzi, F; Steiger, L; Sulc, M; Takekawa, S; Tessarotto, F; Wollny, H

    2010-01-01

    We are developing a single photon detector for Cherenkov imaging counters. This detector is based on the use of THGEM electron multipliers in a multilayer design. The major goals of our project are ion feedback suppression down to a few per cent, large gain, fast response, insensitivity to magnetic fields, and a large detector size. We report about the project status and perspectives. In particular, we present a systematic study of the THGEM response as a function of geometrical parameters, production techniques and the gas mixture composition. The first figures obtained from measuring the response of a CsI coated THGEM to single photons are presented.

  13. Alpha-particle detection based on the BJT detector and simple, IC-based readout electronics

    Energy Technology Data Exchange (ETDEWEB)

    Rovati, L; Bonaiuti, M [Dipartimento di Ingegneria dell' Informazione, Universita di Modena e Reggio Emilia, Modena (Italy); Bettarini, S [Dipartimento di Fisica, Universita di Pisa and INFN Pisa, Pisa (Italy); Bosisio, L [Dipartimento di Fisica, Universita di Trieste and INFN Trieste, Trieste (Italy); Dalla Betta, G-F; Tyzhnevyi, V [Dipartimento di Ingegneria e Scienza dell' Informazione, Universita di Trento e INFN Trento, Trento (Italy); Verzellesi, G [Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia and INFN Trento, Reggio Emilia (Italy); Zorzi, N, E-mail: giovanni.verzellesi@unimore.i [Fondazione Bruno Kessler (FBK), Trento (Italy)

    2009-11-15

    In this paper we propose a portable instrument for alpha-particle detection based on a previously-developed BJT detector and a simple, IC-based readout electronics. Experimental tests of the BJT detector and readout electronics are reported. Numerical simulations are adopted to predict the performance enhancement achievable with optimized BJT detectors.

  14. Alpha-particle detection based on the BJT detector and simple, IC-based readout electronics

    International Nuclear Information System (INIS)

    Rovati, L; Bonaiuti, M; Bettarini, S; Bosisio, L; Dalla Betta, G-F; Tyzhnevyi, V; Verzellesi, G; Zorzi, N

    2009-01-01

    In this paper we propose a portable instrument for alpha-particle detection based on a previously-developed BJT detector and a simple, IC-based readout electronics. Experimental tests of the BJT detector and readout electronics are reported. Numerical simulations are adopted to predict the performance enhancement achievable with optimized BJT detectors.

  15. Scintillation Particle Detectors Based on Plastic Optical Fibres and Microfluidics

    CERN Document Server

    Mapelli, Alessandro; Renaud, Philippe

    2011-01-01

    This thesis presents the design, development, and experimental validation of two types of scintillation particle detectors with high spatial resolution. The first one is based on the well established scintillating fibre technology. It will complement the ATLAS (A Toroidal Large ApparatuS) detector at the CERN Large Hadron Collider (LHC). The second detector consists in a microfabricated device used to demonstrate the principle of operation of a novel type of scintillation detector based on microfluidics. The first part of the thesis presents the work performed on a scintillating fibre tracking system for the ATLAS experiment. It will measure the trajectory of protons elastically scattered at very small angles to determine the absolute luminosity of the CERN LHC collider at the ATLAS interaction point. The luminosity of an accelerator characterizes its performance. It is a process-independent parameter that is completely determined by the properties of the colliding beams and it relates the cross section of a ...

  16. Micro controller based system for characterizing gas detector operating parameters

    International Nuclear Information System (INIS)

    Thakur, Vaishali M.; Verma, Amit K.; Anilkumar, S.; Babu, D.A.R.; Sharma, D.N.; Harikumar, M.

    2011-01-01

    The estimation and analysis of radioactivity levels in samples from environment and from various stages of nuclear fuel cycle operations has become a matter of concern for the implementation of radiological safety procedures. Gas filled/ flow detectors play crucial role in achieving this objective. Since these detectors need high voltage for their operation, the operating characteristics of each detector for optimum performance has to be determined before incorporating into the systems. The operating voltages of these detectors are ranging from few hundred volts to few kilo volts. Present paper describes the design of microcontroller based system to control two HV modules (Electron tubes make: PS2001/12P) independently and acquire data from different gas filled radiation detectors simultaneously. The system uses Philips 80C552 microcontroller based Single Board Computer (SBC). The inbuilt DAC and ADC of microcontroller were used to control HV from 0-2000 with less than ± 1 %, error 1000V. The starting HV, HV step size, decision making intelligence to terminate HV increment (for preset plateau slope) and data acquisition (for preset time), data acquisition time etc., can be programmed. Nearly 200 detectors data (20 data points per detector) can be stored and transferred to PC on request. Data collected by the system for LND 719 GM detectors with starting voltage from 500 V, HV step size of 24 V and 100 seconds counting time to find out the plateau length. The plateau slope and length obtained with this system for LND 719 GM detectors are 3-5%/100V and ∼ 150V respectively. (author)

  17. Hierarchical Co-based Porous Layered Double Hydroxide Arrays Derived via Alkali Etching for High-performance Supercapacitors

    Science.gov (United States)

    Abushrenta, Nasser; Wu, Xiaochao; Wang, Junnan; Liu, Junfeng; Sun, Xiaoming

    2015-08-01

    Hierarchical nanoarchitecture and porous structure can both provide advantages for improving the electrochemical performance in energy storage electrodes. Here we report a novel strategy to synthesize new electrode materials, hierarchical Co-based porous layered double hydroxide (PLDH) arrays derived via alkali etching from Co(OH)2@CoAl LDH nanoarrays. This structure not only has the benefits of hierarchical nanoarrays including short ion diffusion path and good charge transport, but also possesses a large contact surface area owing to its porous structure which lead to a high specific capacitance (23.75 F cm-2 or 1734 F g-1 at 5 mA cm-2) and excellent cycling performance (over 85% after 5000 cycles). The enhanced electrode material is a promising candidate for supercapacitors in future application.

  18. OPTICALLY BASED CHARGE INJECTION SYSTEM FOR IONIZATION DETECTORS

    International Nuclear Information System (INIS)

    CHEN, H.; CITTERIO, M.; LANNI, F.; LEITE, M.A.L.; RADEKA, V.; RESCIA, S.; TAKAI, H.

    2001-01-01

    An optically coupled charge injection system for ionization based radiation detectors which allows a test charge to be injected without the creation of ground loops has been developed. An ionization like signal from an external source is brought into the detector through an optical fiber and injected into the electrodes by means of a photodiode. As an application example, crosstalk measurements on a liquid Argon electromagnetic calorimeter readout electrodes were performed

  19. Highly Sensitive Refractive Index Sensor Based on a Cladding-Etched Thin-Core Fiber Sandwiched between Two Single-Mode Fibers

    International Nuclear Information System (INIS)

    Xu Ben; Li Yi; Dong Xin-Yong; Jin Shang-Zhong; Zhang Zai-Xuan

    2012-01-01

    A refractive index (RI) sensor based on a cladding-etched thin-core single-mode fiber (TCSMF) sandwiched between two single-mode fibers is demonstrated. The experimental results show that the sensitivity, within the RI range of 1.333–1.340, is enhanced at least 6 times by etching. It increases with the surrounding RI and reaches 857.5 nm/RIU at RI of 1.3684, and it can be expected to be higher with the decrease of the cladding diameter of the TCSMF

  20. Accurate and independent spectral response scale based on silicon trap detectors and spectrally invariant detectors

    International Nuclear Information System (INIS)

    Gran, Jarle

    2005-01-01

    The study aims to establish an independent high accuracy spectral response scale over a broad spectral range based on standard laboratory equipment at a moderate cost. This had to be done by a primary method, where the responsivity of the detector is linked to fundamental constants. Summary, conclusion and future directions: In this thesis it has been demonstrated that an independent spectral response scale from the visual to the IR based on simple relative measurements can be established. The accuracy obtained by the hybrid self-calibration method demonstrates that state of the art accuracy is obtained with self-calibration principles. A calculable silicon trap detector with low internal losses over a wide spectral range is needed to establish the scale, in addition to a linear, spectrally independent detector with a good signal to noise ratio. By fitting the parameters in the responsivity model to a purely relative measurement we express the spectral response in terms of fundamental constants with a known uncertainty This is therefore a primary method. By applying a digital filter on the relative measurements of the InGaAs detectors in the infrared reduces the standard deviation by 30 %. In addition, by optimising the necessary scaling constant converting the relative calibration to absolute values, we have managed to establish an accurate and cost efficient spectral response scale in the IR. The full covariance analysis, which takes into account the correlation in the absolute values of the silicon detector, the correlation caused by the filter and the scaling constant, shows that the spectral response scale established in the infrared with InGaAs detectors is done with high accuracy. A similar procedure can be used in the UV, though it has not been demonstrated here. In fig. 10 the responsitivities of the detectors (a) and their associated uncertainties (b) at the 1 sigma level of confidence is compared for the three publications. We see that the responsivity

  1. Central Tracking Detector Based on Scintillating Fibres

    CERN Multimedia

    2002-01-01

    Scintillating fibres form a reasonable compromise for central tracking detectors in terms of price, resolution, response time, occupancy and heat production. \\\\ \\\\ New fluorescents with large Stokes shifts have been produced, capable of working without wavelength shifters. Coherent multibundles have been developed to achieve high packing fractions. Small segments of tracker shell have been assembled and beam tests have confirmed expectations on spatial resolution. An opto-electronic delay line has been designed to delay the track patterns and enable coincidences with a first level trigger. Replacement of the conventional phosphor screen anode with a Si pixel chip is achieved. This tube is called ISPA-tube and has already been operated in beam tests with a scintillating fibres tracker. \\\\ \\\\ The aim of the proposal is to improve hit densities for small diameter fibres by increasing the fraction of trapped light, by reducing absorption and reflection losses, by reflecting light at the free fibre end, and by inc...

  2. Four channel Cosmic Ray detector based on polymaq

    Science.gov (United States)

    Herrera-Guzman, K. N.; Gutierrez-Sanchez, R. A.; Felix, J.

    2017-01-01

    The Cherenkov radiation has been widely studied in transparent materials, and applied to detect and identify elementary particles. But it has not been widely studied in opaque materials. A four channels radiation detector has been designed, built, characterized, and operated; based on four polymaq (UHMW-PE) bars of 2.54 cm X 5.08 cm X 25.4 cm, which is an opaque material to visible radiation to the human eye. Silicon photo detectors, Hamamatsu, avalanche type (APD) are used to detect the radiation produced by the passage of particles in the detector blocks. The design, construction, characterization, operation, and preliminary results of this cosmic ray detector details are presented.

  3. Field and laboratory tests of etched track detectors for 222Rn: summer-vs-winter variations and tightness effects in Maine houses

    International Nuclear Information System (INIS)

    Hess, C.T.; Fleischer, R.L.; Turner, L.G.

    1985-01-01

    Effects of tightness of homes of bedrock character on indoor 222 Rn concentrations were sought in 70 homes in the state of Maine by means of four 6- to 8-month-long surveys over a 1.5-yr period. Laboratory experiments were also performed that document the reliability of the track etching system used for the measurements. In this survey the Rn in tight homes was on the average 3.5 times that in drafty ones, and areas with granitic bedrock led to homes having 2.3 times the Rn as for homes on chlorite-biotite-rich bedrock. Winter-to-summer ratios ranged from 0.5-7, and averaged 1.5, implying that surveys of individual homes require a full year of monitoring

  4. Development of X-ray detector based on phototransistor

    International Nuclear Information System (INIS)

    Ramacos Fardela; Kusminarto

    2014-01-01

    X-ray interaction with matter can produce phenomenon of fluorescence that emits visible light. This phenomenon has been exploited to design an X-ray detector based on photo transistor by attaching a screen ZnS(Ag) on the surface of the photo transistor which is arranged in a Darlington circuit. Response of detector was done by collimating of X-rays beam from the X-ray generator tube Philips 2000 watts, 60 kV type PW 2215/20 NR 780 026 and measure the detector output voltage (V out ). Varying the current by 5, 10, 15, 20, 25, 30, 35 and 40 mA in the X-ray panel. The experimental results showed that the Darlington circuit can be applied to design the detector of X-ray based on phototransistor. The results show that there is a linear relationship between the change in the intensity of X-ray detectors with voltage output phototransistor when it was closed with fluorescence materials ZnS(Ag), the linearity coefficient was R 2 = 0.99. Sensitivity of detector was obtained to be 3.7 x 10 -2 mV per cpm. (author)

  5. New Fast Response Thin Film-Based Superconducting Quench Detectors

    CERN Document Server

    Dudarev, A; van de Camp, W; Ravaioli, E; Teixeira, A; ten Kate, H H J

    2014-01-01

    Quench detection on superconducting bus bars and other devices with a low normal zone propagation velocity and low voltage build-up is quite difficult with conventional quench detection techniques. Currently, on ATLAS superconducting bus bar sections, superconducting quench detectors (SQD) are mounted to detect quench events. A first version of the SQD essentially consists of an insulated superconducting wire glued to a superconducting bus line or windings, which in the case of a quench rapidly builds up a relatively high resistance that can be easily and quietly detected. We now introduce a new generation of drastically improved SQDs. The new version makes the detection of quenches simpler, more reliable, and much faster. Instead of a superconducting wire, now a superconducting thin film is used. The layout of the sensor shows a meander like pattern that is etched out of a copper coated 25 mu m thick film of Nb-Ti glued in between layers of Kapton. Since the sensor is now much smaller and thinner, it is easi...

  6. Development of a neutron imager based on superconducting detectors

    Energy Technology Data Exchange (ETDEWEB)

    Miyajima, Shigeyuki, E-mail: miyajima@nict.go.jp [Department of Physics and Engineering, Osaka Prefecture University (Japan); Institute for Nanofabrication Research, Osaka Prefecture University (Japan); Yamaguchi, Hiroyuki; Nakayama, Hirotaka; Shishido, Hiroaki [Department of Physics and Engineering, Osaka Prefecture University (Japan); Institute for Nanofabrication Research, Osaka Prefecture University (Japan); Fujimaki, Akira [Department of Quantum Engineering, Nagoya University (Japan); Hidaka, Mutsuo [National Institute of Advanced Industrial Science and Technology (Japan); Harada, Masahide; Oikawa, Kenichi; Oku, Takayuki; Arai, Masatoshi [J-PARC Center, Japan Atomic Energy Agency (Japan); Ishida, Takekazu [Department of Physics and Engineering, Osaka Prefecture University (Japan); Institute for Nanofabrication Research, Osaka Prefecture University (Japan)

    2016-11-15

    Highlights: • A neutron detector based on superconducting meander line is demonstrated. • Fast response time of a few tens ns is obtained. • Spatial resolution is 1 μm and can be improved to sub-μm scale. • The proposed neutron detector can operate under the γ-ray fields. - Abstract: We succeeded in demonstrating a neutron detector based on a Nb superconducting meander line with a {sup 10}B conversion layer for a neutron imager based on superconductor devices. We use a current-biased kinetic inductance detector (CB-KID), which is composed of a meander line, for detection of a neutron with high spatial resolution and fast response time. The thickness of Nb meander lines is 40 nm and the line width is narrower than 3 mu m. The area of 8 mm × 8 mm is covered by CB-KIDs, which are assembled at the center of the Si chip of the size 22 mm × 22 mm. The Nb CB-KIDs with a {sup 10}B conversion layer output the voltage by irradiating pulsed neutrons. We have investigated γ/n discrimination of a Nb-based CB-KID with {sup 10}B conversion layer using a Cd plate, which indicates that a CB-KID can operate as a neutron detector under the strong γ-ray fields.

  7. Development of a neutron imager based on superconducting detectors

    International Nuclear Information System (INIS)

    Miyajima, Shigeyuki; Yamaguchi, Hiroyuki; Nakayama, Hirotaka; Shishido, Hiroaki; Fujimaki, Akira; Hidaka, Mutsuo; Harada, Masahide; Oikawa, Kenichi; Oku, Takayuki; Arai, Masatoshi; Ishida, Takekazu

    2016-01-01

    Highlights: • A neutron detector based on superconducting meander line is demonstrated. • Fast response time of a few tens ns is obtained. • Spatial resolution is 1 μm and can be improved to sub-μm scale. • The proposed neutron detector can operate under the γ-ray fields. - Abstract: We succeeded in demonstrating a neutron detector based on a Nb superconducting meander line with a "1"0B conversion layer for a neutron imager based on superconductor devices. We use a current-biased kinetic inductance detector (CB-KID), which is composed of a meander line, for detection of a neutron with high spatial resolution and fast response time. The thickness of Nb meander lines is 40 nm and the line width is narrower than 3 mu m. The area of 8 mm × 8 mm is covered by CB-KIDs, which are assembled at the center of the Si chip of the size 22 mm × 22 mm. The Nb CB-KIDs with a "1"0B conversion layer output the voltage by irradiating pulsed neutrons. We have investigated γ/n discrimination of a Nb-based CB-KID with "1"0B conversion layer using a Cd plate, which indicates that a CB-KID can operate as a neutron detector under the strong γ-ray fields.

  8. Instrumentation for Kinetic-Inductance-Detector-Based Submillimeter Radio Astronomy

    Science.gov (United States)

    Duan, Ran

    A substantial amount of important scientific information is contained within astronomical data at the submillimeter and far-infrared (FIR) wavelengths, including information regarding dusty galaxies, galaxy clusters, and star-forming regions; however, these wavelengths are among the least-explored fields in astronomy because of the technological difficulties involved in such research. Over the past 20 years, considerable efforts have been devoted to developing submillimeter- and millimeter-wavelength astronomical instruments and telescopes. The number of detectors is an important property of such instruments and is the subject of the current study. Future telescopes will require as many as hundreds of thousands of detectors to meet the necessary requirements in terms of the field of view, scan speed, and resolution. A large pixel count is one benefit of the development of multiplexable detectors that use kinetic inductance detector (KID) technology. This dissertation presents the development of a KID-based instrument including a portion of the millimeter-wave bandpass filters and all aspects of the readout electronics, which together enabled one of the largest detector counts achieved to date in submillimeter-/millimeter-wavelength imaging arrays: a total of 2304 detectors. The work presented in this dissertation has been implemented in the MUltiwavelength Submillimeter Inductance Camera (MUSIC), a new instrument for the Caltech Submillimeter Observatory (CSO).

  9. Cellular automaton-based position sensitive detector equalization

    Energy Technology Data Exchange (ETDEWEB)

    Ferrando, Nestor [Grupo de Diseno de Sistemas Digitales, Instituto de Aplicaciones de las Tecnologias de la Informacion y de las Comunicaciones Avanzadas, Universidad Politecnica de Valencia, Camino de Vera s/n, 46022 Valencia (Spain)], E-mail: nesferjo@upvnet.upv.es; Herrero, V.; Cerda, J.; Lerche, C.W.; Colom, R.J.; Gadea, R.; Martinez, J.D.; Monzo, J.M.; Mateo, F.; Sebastia, A.; Benlloch, J.M. [Grupo de Diseno de Sistemas Digitales, Instituto de Aplicaciones de las Tecnologias de la Informacion y de las Comunicaciones Avanzadas, Universidad Politecnica de Valencia, Camino de Vera s/n, 46022 Valencia (Spain)

    2009-06-01

    Indirect position detectors based on scintillator crystals lack of spacial uniformity in their response. This happens due to crystal inhomogeneities and gain differences among the photomultiplier anodes. In order to solve this, PESIC, an integrated front-end for multianode photomultiplier based nuclear imaging devices was created. One of its main features is the digitally programmable gain adjustment for every photomultiplier output. On another front, cellular automata have been proved to be a useful method for dynamic system modeling. In this paper, a cellular automaton which emulates the behavior of the scintillator crystal, the photomultiplier and the front-end is introduced. Thanks to this model, an automatic energy-based calibration of the detector can be done by configuring the cellular automaton with experimental data and making it evolve up to an stable state. This can be useful as a precalibration method of the detector.

  10. Cellular automaton-based position sensitive detector equalization

    International Nuclear Information System (INIS)

    Ferrando, Nestor; Herrero, V.; Cerda, J.; Lerche, C.W.; Colom, R.J.; Gadea, R.; Martinez, J.D.; Monzo, J.M.; Mateo, F.; Sebastia, A.; Benlloch, J.M.

    2009-01-01

    Indirect position detectors based on scintillator crystals lack of spacial uniformity in their response. This happens due to crystal inhomogeneities and gain differences among the photomultiplier anodes. In order to solve this, PESIC, an integrated front-end for multianode photomultiplier based nuclear imaging devices was created. One of its main features is the digitally programmable gain adjustment for every photomultiplier output. On another front, cellular automata have been proved to be a useful method for dynamic system modeling. In this paper, a cellular automaton which emulates the behavior of the scintillator crystal, the photomultiplier and the front-end is introduced. Thanks to this model, an automatic energy-based calibration of the detector can be done by configuring the cellular automaton with experimental data and making it evolve up to an stable state. This can be useful as a precalibration method of the detector.

  11. Fabrication of nanopores in multi-layered silicon-based membranes using focused electron beam induced etching with XeF_2 gas

    International Nuclear Information System (INIS)

    Liebes-Peer, Yael; Bandalo, Vedran; Sökmen, Ünsal; Tornow, Marc; Ashkenasy, Nurit

    2016-01-01

    The emergent technology of using nanopores for stochastic sensing of biomolecules introduces a demand for the development of simple fabrication methodologies of nanopores in solid state membranes. This process becomes particularly challenging when membranes of composite layer architecture are involved. To overcome this challenge we have employed a focused electron beam induced chemical etching process. We present here the fabrication of nanopores in silicon-on-insulator based membranes in a single step process. In this process, chemical etching of the membrane materials by XeF_2 gas is locally accelerated by an electron beam, resulting in local etching, with a top membrane oxide layer preventing delocalized etching of the silicon underneath. Nanopores with a funnel or conical, 3-dimensional (3D) shape can be fabricated, depending on the duration of exposure to XeF_2, and their diameter is dominated by the time of exposure to the electron beam. The demonstrated ability to form high-aspect ratio nanopores in comparably thick, multi-layered silicon based membranes allows for an easy integration into current silicon process technology and hence is attractive for implementation in biosensing lab-on-chip fabrication technologies. (author)

  12. Selective photochemical dry etching of compound semiconductors

    International Nuclear Information System (INIS)

    Ashby, C.I.H.

    1988-01-01

    When laser-driven etching of a semiconductor requires direct participation of photogenerated carriers, the etching quantum yield will be sensitive to the electronic properties of a specific semiconductor material. The band-gap energy of the semiconductor determines the minimum photon energy needed for carrier-driven etching since sub-gap photons do not generate free carriers. However, only those free carriers that reach the reacting surface contribute to etching and the ultimate carrier flux to the surface is controlled by more subtle electronic properties than the lowest-energy band gap. For example, the initial depth of carrier generation and the probability of carrier recombination between the point of generation and the surface profoundly influence the etching quantum yield. Appropriate manipulation of process parameters can provide additional reaction control based on such secondary electronic properties. Applications to selective dry etching of GaAs and related materials are discussed

  13. Silicon-Based Detectors at the HL-LHC

    CERN Document Server

    Hartmann, Frank

    2018-01-01

    This document discusses the silicon-based detectors planned for the High Luminosity LHC. The special aspects to cope with the new environment and its challenges, e.g. very high radiation levels and very high instantaneous luminosity thus high pile-up, high occupancy and high data rates, are addressed. The different design choices of the detectors are put into perspective. Exciting topics like trackers, high granularity silicon-based calorimetry with novel 8~inch processing, fast timing and new triggers are described.

  14. SPECT detector system design based on embedded system

    International Nuclear Information System (INIS)

    Zhang Weizheng; Zhao Shujun; Zhang Lei; Sun Yuanling

    2007-01-01

    A single-photon emission computed tomography detector system based on embedded Linux designed. This system is composed of detector module, data acquisition module, ARM MPU module, network interface communication module and human machine interface module. Its software uses multithreading technology based on embedded Linux. It can achieve high speed data acquisition, real-time data correction and network data communication. It can accelerate the data acquisition and decrease the dead time. The accuracy and the stability of the system can be improved. (authors)

  15. Taheri-Saramad x-ray detector (TSXD): a novel high spatial resolution x-ray imager based on ZnO nano scintillator wires in polycarbonate membrane.

    Science.gov (United States)

    Taheri, A; Saramad, S; Ghalenoei, S; Setayeshi, S

    2014-01-01

    A novel x-ray imager based on ZnO nanowires is designed and fabricated. The proposed architecture is based on scintillation properties of ZnO nanostructures in a polycarbonate track-etched membrane. Because of higher refractive index of ZnO nanowire compared to the membrane, the nanowire acts as an optical fiber that prevents the generated optical photons to spread inside the detector. This effect improves the spatial resolution of the imager. The detection quantum efficiency and spatial resolution of the fabricated imager are 11% and <6.8 μm, respectively.

  16. Taheri-Saramad x-ray detector (TSXD): A novel high spatial resolution x-ray imager based on ZnO nano scintillator wires in polycarbonate membrane

    Energy Technology Data Exchange (ETDEWEB)

    Taheri, A., E-mail: at1361@aut.ac.ir; Saramad, S.; Ghalenoei, S.; Setayeshi, S. [Department of Energy Engineering and Physics, Amirkabir University of Technology, Tehran 15875-4413 (Iran, Islamic Republic of)

    2014-01-15

    A novel x-ray imager based on ZnO nanowires is designed and fabricated. The proposed architecture is based on scintillation properties of ZnO nanostructures in a polycarbonate track-etched membrane. Because of higher refractive index of ZnO nanowire compared to the membrane, the nanowire acts as an optical fiber that prevents the generated optical photons to spread inside the detector. This effect improves the spatial resolution of the imager. The detection quantum efficiency and spatial resolution of the fabricated imager are 11% and <6.8 μm, respectively.

  17. A mass spectrometer based explosives trace detector

    Science.gov (United States)

    Vilkov, Andrey; Jorabchi, Kaveh; Hanold, Karl; Syage, Jack A.

    2011-05-01

    In this paper we describe the application of mass spectrometry (MS) to the detection of trace explosives. We begin by reviewing the issue of explosives trace detection (ETD) and describe the method of mass spectrometry (MS) as an alternative to existing technologies. Effective security screening devices must be accurate (high detection and low false positive rate), fast and cost effective (upfront and operating costs). Ion mobility spectrometry (IMS) is the most commonly deployed method for ETD devices. Its advantages are compact size and relatively low price. For applications requiring a handheld detector, IMS is an excellent choice. For applications that are more stationary (e.g., checkpoint and alternatives to IMS are available. MS is recognized for its superior performance with regard to sensitivity and specificity, which translate to lower false negative and false positive rates. In almost all applications outside of security where accurate chemical analysis is needed, MS is usually the method of choice and is often referred to as the gold standard for chemical analysis. There are many review articles and proceedings that describe detection technologies for explosives. 1,2,3,4 Here we compare MS and IMS and identify the strengths and weaknesses of each method. - Mass spectrometry (MS): MS offers high levels of sensitivity and specificity compared to other technologies for chemical detection. Its traditional disadvantages have been high cost and complexity. Over the last few years, however, the economics have greatly improved and MS is now capable of routine and automated operation. Here we compare MS and IMS and identify the strengths and weaknesses of each method. - Ion mobility spectrometry (IMS): 5 MS-ETD Screening System IMS is similar in concept to MS except that the ions are dispersed by gas-phase viscosity and not by molecular weight. The main advantage of IMS is that it does not use a vacuum system, which greatly reduces the size, cost, and complexity

  18. Modeling the characteristic etch morphologies along specific crystallographic orientations by anisotropic chemical etching

    Science.gov (United States)

    Li, Kun-Dar; Miao, Jin-Ru

    2018-02-01

    To improve the advanced manufacturing technology for functional materials, a sophisticated control of chemical etching process is highly demanded, especially in the fields of environment and energy related applications. In this study, a phase-field-based model is utilized to investigate the etch morphologies influenced by the crystallographic characters during anisotropic chemical etching. Three types of etching modes are inspected theoretically, including the isotropic, and preferred oriented etchings. Owing to the specific etching behavior along the crystallographic directions, different characteristic surface structures are presented in the simulations, such as the pimple-like, pyramidal hillock and ridge-like morphologies. In addition, the processing parameters affecting the surface morphological formation and evolution are also examined systematically. According to the numerical results, the growth mechanism of surface morphology in a chemical etching is revealed distinctly. While the etching dynamics plays a dominant role on the surface formation, the characteristic surface morphologies corresponding to the preferred etching direction become more apparent. As the atomic diffusion turned into a determinative factor, a smoothened surface would appear, even under the anisotropic etching conditions. These simulation results provide fundamental information to enhance the development and application of anisotropic chemical etching techniques.

  19. Modeling the characteristic etch morphologies along specific crystallographic orientations by anisotropic chemical etching

    Directory of Open Access Journals (Sweden)

    Kun-Dar Li

    2018-02-01

    Full Text Available To improve the advanced manufacturing technology for functional materials, a sophisticated control of chemical etching process is highly demanded, especially in the fields of environment and energy related applications. In this study, a phase-field-based model is utilized to investigate the etch morphologies influenced by the crystallographic characters during anisotropic chemical etching. Three types of etching modes are inspected theoretically, including the isotropic, and preferred oriented etchings. Owing to the specific etching behavior along the crystallographic directions, different characteristic surface structures are presented in the simulations, such as the pimple-like, pyramidal hillock and ridge-like morphologies. In addition, the processing parameters affecting the surface morphological formation and evolution are also examined systematically. According to the numerical results, the growth mechanism of surface morphology in a chemical etching is revealed distinctly. While the etching dynamics plays a dominant role on the surface formation, the characteristic surface morphologies corresponding to the preferred etching direction become more apparent. As the atomic diffusion turned into a determinative factor, a smoothened surface would appear, even under the anisotropic etching conditions. These simulation results provide fundamental information to enhance the development and application of anisotropic chemical etching techniques.

  20. Electronic readout for THGEM detectors based on FPGA TDCs

    Energy Technology Data Exchange (ETDEWEB)

    Baumann, Tobias; Buechele, Maximilian; Fischer, Horst; Gorzellik, Matthias; Grussenmeyer, Tobias; Herrmann, Florian; Joerg, Philipp; Koenigsmann, Kay; Kremser, Paul; Kunz, Tobias; Michalski, Christoph; Schopferer, Sebastian; Szameitat, Tobias [Physikalisches Institut, Freiburg Univ. (Germany); Collaboration: COMPASS-II RICH upgrade Group

    2013-07-01

    In the framework of the RD51 programme the characteristics of a new detector design, called THGEM, which is based on multi-layer arrangements of printed circuit board material, is investigated. The THGEMs combine the advantages for covering gains up to 10{sup 6} in electron multiplication at large detector areas and low material budget. Studies are performed by extending the design to a hybrid gas detector by adding a Micromega layer, which significantly improves the ion back flow ratio of the chamber. With the upgrade of the COMPASS experiment at CERN a MWPC plane of the RICH-1 detector will be replaced by installing THGEM chambers. This summarizes to 40k channels of electronic readout, including amplification, discrimination and time-to-digital conversion of the anode signals. Due to the expected hit rate of the detector we design a cost-efficient TDC, based on Artix7 FPGA technology, with time resolution below 100 ps and sufficient hit buffer depth. To cover the large readout area the data is transferred via optical fibres to a central readout system which is part of the GANDALF framework.

  1. Radiation imaging with optically read out GEM-based detectors

    Science.gov (United States)

    Brunbauer, F. M.; Lupberger, M.; Oliveri, E.; Resnati, F.; Ropelewski, L.; Streli, C.; Thuiner, P.; van Stenis, M.

    2018-02-01

    Modern imaging sensors allow for high granularity optical readout of radiation detectors such as MicroPattern Gaseous Detectors (MPGDs). Taking advantage of the high signal amplification factors achievable by MPGD technologies such as Gaseous Electron Multipliers (GEMs), highly sensitive detectors can be realised and employing gas mixtures with strong scintillation yield in the visible wavelength regime, optical readout of such detectors can provide high-resolution event representations. Applications from X-ray imaging to fluoroscopy and tomography profit from the good spatial resolution of optical readout and the possibility to obtain images without the need for extensive reconstruction. Sensitivity to low-energy X-rays and energy resolution permit energy resolved imaging and material distinction in X-ray fluorescence measurements. Additionally, the low material budget of gaseous detectors and the possibility to couple scintillation light to imaging sensors via fibres or mirrors makes optically read out GEMs an ideal candidate for beam monitoring detectors in high energy physics as well as radiotherapy. We present applications and achievements of optically read out GEM-based detectors including high spatial resolution imaging and X-ray fluorescence measurements as an alternative readout approach for MPGDs. A detector concept for low intensity applications such as X-ray crystallography, which maximises detection efficiency with a thick conversion region but mitigates parallax-induced broadening is presented and beam monitoring capabilities of optical readout are explored. Augmenting high resolution 2D projections of particle tracks obtained with optical readout with timing information from fast photon detectors or transparent anodes for charge readout, 3D reconstruction of particle trajectories can be performed and permits the realisation of optically read out time projection chambers. Combining readily available high performance imaging sensors with compatible

  2. A Weak Value Based QKD Protocol Robust Against Detector Attacks

    Science.gov (United States)

    Troupe, James

    2015-03-01

    We propose a variation of the BB84 quantum key distribution protocol that utilizes the properties of weak values to insure the validity of the quantum bit error rate estimates used to detect an eavesdropper. The protocol is shown theoretically to be secure against recently demonstrated attacks utilizing detector blinding and control and should also be robust against all detector based hacking. Importantly, the new protocol promises to achieve this additional security without negatively impacting the secure key generation rate as compared to that originally promised by the standard BB84 scheme. Implementation of the weak measurements needed by the protocol should be very feasible using standard quantum optical techniques.

  3. Uniformity studies in large area triple-GEM based detectors

    Energy Technology Data Exchange (ETDEWEB)

    Akl, M. Abi [Science Program, Texas A& M University at Qatar, PO Box 23874, Doha (Qatar); Bouhali, O., E-mail: othmane.bouhali@qatar.tamu.edu [Science Program, Texas A& M University at Qatar, PO Box 23874, Doha (Qatar); Qatar Computing Research Institute, Hamad Bin Khalifa University, PO Box 5825, Doha (Qatar); Castaneda, A.; Maghrbi, Y.; Mohamed, T. [Science Program, Texas A& M University at Qatar, PO Box 23874, Doha (Qatar)

    2016-10-01

    Gas Electron Multiplier (GEM) based detectors have been used in many applications since their introduction in 1997. Large areas, e.g. exceeding 30×30 cm{sup 2}, of GEM detectors are foreseen in future experiments which puts stringent requirements on the uniformity of response across the detection area. We investigate the effect of small variations of several parameters that could affect the uniformity. Parameters such as the anode pitch, the gas gap, the size and the shape of the holes are investigated. Simulation results are presented and compared to previous experimental data.

  4. Experimental characterization of semiconductor-based thermal neutron detectors

    Energy Technology Data Exchange (ETDEWEB)

    Bedogni, R., E-mail: roberto.bedogni@lnf.infn.it [IFNF—LNF, via E. Fermi n. 40, 00044 Frascati, Roma (Italy); Bortot, D.; Pola, A.; Introini, M.V.; Lorenzoli, M. [Politecnico di Milano, Dipartimento di Energia, via La Masa 34, 20156 Milano (Italy); INFN—Milano, Via Celoria 16, 20133 Milano (Italy); Gómez-Ros, J.M. [IFNF—LNF, via E. Fermi n. 40, 00044 Frascati, Roma (Italy); CIEMAT, Av. Complutense 40, 28040 Madrid (Spain); Sacco, D. [IFNF—LNF, via E. Fermi n. 40, 00044 Frascati, Roma (Italy); INAIL—DIT, Via di Fontana Candida 1, 00040 Monteporzio Catone (Italy); Esposito, A.; Gentile, A.; Buonomo, B. [IFNF—LNF, via E. Fermi n. 40, 00044 Frascati, Roma (Italy); Palomba, M.; Grossi, A. [ENEA Triga RC-1C.R. Casaccia, via Anguillarese 301, 00060 S. Maria di Galeria, Roma (Italy)

    2015-04-21

    In the framework of NESCOFI@BTF and NEURAPID projects, active thermal neutron detectors were manufactured by depositing appropriate thickness of {sup 6}LiF on commercially available windowless p–i–n diodes. Detectors with different radiator thickness, ranging from 5 to 62 μm, were manufactured by evaporation-based deposition technique and exposed to known values of thermal neutron fluence in two thermal neutron facilities exhibiting different irradiation geometries. The following properties of the detector response were investigated and presented in this work: thickness dependence, impact of parasitic effects (photons and epithermal neutrons), linearity, isotropy, and radiation damage following exposure to large fluence (in the order of 10{sup 12} cm{sup −2})

  5. Dual-color plasmonic enzyme-linked immunosorbent assay based on enzyme-mediated etching of Au nanoparticles

    Science.gov (United States)

    Guo, Longhua; Xu, Shaohua; Ma, Xiaoming; Qiu, Bin; Lin, Zhenyu; Chen, Guonan

    2016-09-01

    Colorimetric enzyme-linked immunosorbent assay utilizing 3‧-3-5‧-5-tetramethylbenzidine(TMB) as the chromogenic substrate has been widely used in the hospital for the detection of all kinds of disease biomarkers. Herein, we demonstrate a strategy to change this single-color display into dual-color responses to improve the accuracy of visual inspection. Our investigation firstly reveals that oxidation state of 3‧-3-5‧-5-tetramethylbenzidine (TMB2+) can quantitatively etch gold nanoparticles. Therefore, the incorporation of gold nanoparticles into a commercial TMB-based ELISA kit could generate dual-color responses: the solution color varied gradually from wine red (absorption peak located at ~530 nm) to colorless, and then from colorless to yellow (absorption peak located at ~450 nm) with the increase amount of targets. These dual-color responses effectively improved the sensitivity as well as the accuracy of visual inspection. For example, the proposed dual-color plasmonic ELISA is demonstrated for the detection of prostate-specific antigen (PSA) in human serum with a visual limit of detection (LOD) as low as 0.0093 ng/mL.

  6. Nuclear track detector kit for use in teaching

    International Nuclear Information System (INIS)

    Medveczky, L.; Somogyi, G.

    1986-01-01

    By the use of solid state nuclear track detectors (SSNTDs) one may carry out several useful and impressive educational experiments and demonstrations to illustrate different phenomena when teaching of nuclear physics. Realizing this situation the authors have published, since 1970, reports on several experiments for teaching demonstrations. Based on the authors instructions, a factory in Hungary (TANFRT, National Manufacturers and Suppliers of School Equipment, Budapest) constructed a kit for the use of nuclear track detectors in teaching. The portable kit contains the following items: alpha-emitting weak sources, solid state nuclear track detectors (unirradiated, irradiated, unetched and etched sheets), simple tools for carrying out experiments (facilities for irradiation and etching, etc.), slides showing photos of typical etch-tracks of light and heavy nuclei, user manual. By the help of the kit both pupils and teachers can perform various useful experiments and/or demonstrations. (author)

  7. Nuclear track detector kit for use in teaching

    Energy Technology Data Exchange (ETDEWEB)

    Medveczky, L.; Somogyi, G.; Nagy, M.

    1986-01-01

    By the use of solid state nuclear track detectors (SSNTDs) one may carry out several useful and impressive educational experiments and demonstrations to illustrate different phenomena when teaching of nuclear physics. Realizing this situation the authors have published, since 1970, reports on several experiments for teaching demonstrations. Based on the authors instructions, a factory in Hungary (TANFRT, National Manufacturers and Suppliers of School Equipment, Budapest) constructed a kit for the use of nuclear track detectors in teaching. The portable kit contains the following items: alpha-emitting weak sources, solid state nuclear track detectors (unirradiated, irradiated, unetched and etched sheets), simple tools for carrying out experiments (facilities for irradiation and etching, etc.), slides showing photos of typical etch-tracks of light and heavy nuclei, user manual. By the help of the kit both pupils and teachers can perform various useful experiments and/or demonstrations.

  8. Effects of epitaxial structure and processing on electrical characteristics of InAs-based nBn infrared detectors

    Science.gov (United States)

    Du, X.; Savich, G. R.; Marozas, B. T.; Wicks, G. W.

    2017-02-01

    The conventional processing of the III-V nBn photodetectors defines mesa devices by etching the contact n-layer and stopping immediately above the barrier, i.e., a shallow etch. This processing enables great suppression of surface leakage currents without having to explore surface passivation techniques. However, devices that are made with this processing scheme are subject to lateral diffusion currents. To address the lateral diffusion current, we compare the effects of different processing approaches and epitaxial structures of nBn detectors. The conventional solution for eliminating lateral diffusion current, a deep etch through the barrier and the absorber, creates increased dark currents and an increased device failure rate. To avoid deep etch processing, a new device structure is proposed, the inverted-nBn structure. By comparing with the conventional nBn structure, the results show that the lateral diffusion current is effectively eliminated in the inverted-nBn structure without elevating the dark currents.

  9. Radially polarized conical beam from an embedded etched fiber.

    Science.gov (United States)

    Kalaidji, Djamel; Spajer, Michel; Marthouret, Nadège; Grosjean, Thierry

    2009-06-15

    We propose a method for producing a conical beam based on the lateral refraction of the TM(01) mode from a two-mode fiber after chemical etching of the cladding, and for controlling its radial polarization. The whole power of the guided mode is transferred to the refracted beam with low diffraction. Polarization control by a series of azimuthal detectors and a stress controller affords the transmission of a stabilized radial polarization through an optical fiber. A solid component usable for many applications has been obtained.

  10. Temperature detectors on irradiated silicon base

    International Nuclear Information System (INIS)

    Karimov, M.; Dzhalelov, M.A.; Kurbanov, A.O.

    2005-01-01

    It is well known, that the most suitable for thermal resistors production is compensated silicon with impurities forming deep lying in forbidden zone, having big negative resistance temperature coefficients (RTC). In the capacity of initial materials for thermal resistors with negative RTC the n-type monocrystalline silicon with specific resistance ∼30 Ω·cm at 300 K is applied. Before the irradiation the phosphorus diffusion is realizing at temperature ∼1000 deg. C for 10 min. Irradiation is putting into practise by WWR-SM reactor fast neutrons within the range (7-10)·10 13 cm -2 . The produced resistors have nominal resistance range (8-20)·10 3 Ω·cm, coefficient of the thermal sensitivity B=4000-6000 deg. C., RTC α 300K =4-6.6 %/grad. It is shown, that offered method allows to obtain same type resistors characteristics on the base of neutron-irradiated material

  11. Skyrmion based microwave detectors and harvesting

    International Nuclear Information System (INIS)

    Finocchio, G.; Giordano, A.; Ricci, M.; Burrascano, P.; Tomasello, R.; Lanuzza, M.; Puliafito, V.; Azzerboni, B.; Carpentieri, M.

    2015-01-01

    Magnetic skyrmions are topologically protected states that are very promising for the design of the next generation of ultra-low-power electronic devices. In this letter, we propose a magnetic tunnel junction based spin-transfer torque diode with a magnetic skyrmion as ground state and a perpendicular polarizer patterned as nano-contact for a local injection of the current. The key result is the possibility to achieve sensitivities (i.e., detection voltage over input microwave power) larger than 2000 V/W for optimized contact diameters. We also pointed out that large enough voltage controlled magnetocrystalline anisotropy could significantly improve the sensitivity. Our results can be very useful for the identification of a class of spin-torque diodes with a non-uniform ground state and to understand the fundamental physics of the skyrmion dynamical properties

  12. Skyrmion based microwave detectors and harvesting

    Energy Technology Data Exchange (ETDEWEB)

    Finocchio, G.; Giordano, A. [Department of Mathematical and Computer Sciences, Physical Sciences and Earth Sciences, University of Messina, Viale F. Stagno d' Alcontres 31, 98166 Messina (Italy); Ricci, M.; Burrascano, P. [Department of Engineering, Polo Scientifico Didattico di Terni, University of Perugia, Terni, TR I-50100 (Italy); Tomasello, R.; Lanuzza, M. [Department of Computer Science, Modelling, Electronics and System Science, University of Calabria, via P. Bucci 41C, I-87036 Rende (CS) (Italy); Puliafito, V.; Azzerboni, B. [Department of Engineering, University of Messina, c.da di Dio, I-98166 Messina (Italy); Carpentieri, M. [Department of Electrical and Information Engineering, Politecnico di Bari, via E. Orabona 4, I-70125 Bari (Italy)

    2015-12-28

    Magnetic skyrmions are topologically protected states that are very promising for the design of the next generation of ultra-low-power electronic devices. In this letter, we propose a magnetic tunnel junction based spin-transfer torque diode with a magnetic skyrmion as ground state and a perpendicular polarizer patterned as nano-contact for a local injection of the current. The key result is the possibility to achieve sensitivities (i.e., detection voltage over input microwave power) larger than 2000 V/W for optimized contact diameters. We also pointed out that large enough voltage controlled magnetocrystalline anisotropy could significantly improve the sensitivity. Our results can be very useful for the identification of a class of spin-torque diodes with a non-uniform ground state and to understand the fundamental physics of the skyrmion dynamical properties.

  13. Development of a Ferrite-Based Electromagnetic Wave Detector

    Directory of Open Access Journals (Sweden)

    Muhammad Hanish Zakariah

    2017-11-01

    Full Text Available Direct detection of hydrocarbon by an active source using electromagnetic (EM wave termed Sea Bed Logging (SBL has shown very promising results. However, currently available electromagnetic wave technology has a number of challenges including sensitivity and lapsed time. Our initial response to this issue is to develop a ferrite-based EM wave detector for Sea Bed Logging (SBL. Ferrite bar and copper rings in various diameters were used as detector 1 (D1. For Detector 2 (D2, toroid added with copper wires in different lengths at the centre of it were used. The first experiment is to determine the inductance and resistance for both detectors by using LCR meter. We obtained the highest inductance value of 0.02530 mH at the ferrite bar when it was paired with a 15 cm diameter copper ring and 0.00526 mH for D2 using a 100 cm copper wire placed at the centre of the toroid. The highest resistivity for D1 was measured at ferrite bar paired with a 15 cm diameter  copper ring and 1.099 Ω when using 20 cm length of copper wire. The second interest deals with voltage peak-to-peak (Vp-p value for both detectors by using oscilloscope. The highest voltage value at the ferrite bar of D1 was 25.30 mV. While at D2, the highest voltage measured was 27.70 mV when using a 100 cm copper wire. The third premise is the comparison of sensitivity and lapsed time for both detectors. It was found that D1 was 61% more sensitive than D2 but had higher lapsed time than D2.

  14. Novel detectors for silicon based microdosimetry, their concepts and applications

    Science.gov (United States)

    Rosenfeld, Anatoly B.

    2016-02-01

    This paper presents an overview of the development of semiconductor microdosimetry and the most current (state-of-the-art) Silicon on Insulator (SOI) detectors for microdosimetry based mainly on research and development carried out at the Centre for Medical Radiation Physics (CMRP) at the University of Wollongong with collaborators over the last 18 years. In this paper every generation of CMRP SOI microdosimeters, including their fabrication, design, and electrical and charge collection characterisation are presented. A study of SOI microdosimeters in various radiation fields has demonstrated that under appropriate geometrical scaling, the response of SOI detectors with the well-known geometry of microscopically sensitive volumes will record the energy deposition spectra representative of tissue cells of an equivalent shape. This development of SOI detectors for microdosimetry with increased complexity has improved the definition of microscopic sensitive volume (SV), which is modelling the deposition of ionising energy in a biological cell, that are led from planar to 3D SOI detectors with an array of segmented microscopic 3D SVs. The monolithic ΔE-E silicon telescope, which is an alternative to the SOI silicon microdosimeter, is presented, and as an example, applications of SOI detectors and ΔE-E monolithic telescope for microdosimetery in proton therapy field and equivalent neutron dose measurements out of field are also presented. An SOI microdosimeter "bridge" with 3D SVs can derive the relative biological effectiveness (RBE) in 12C ion radiation therapy that matches the tissue equivalent proportional counter (TEPC) quite well, but with outstanding spatial resolution. The use of SOI technology in experimental microdosimetry offers simplicity (no gas system or HV supply), high spatial resolution, low cost, high count rates, and the possibility of integrating the system onto a single device with other types of detectors.

  15. Photoacoustic-based detector for infrared laser spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Scholz, L.; Palzer, S., E-mail: stefan.palzer@imtek.uni-freiburg.de [Department of Microsystems Engineering-IMTEK, Laboratory for Gas Sensors, University of Freiburg, Georges-Köhler-Allee 102, Freiburg 79110 (Germany)

    2016-07-25

    In this contribution, we present an alternative detector technology for use in direct absorption spectroscopy setups. Instead of a semiconductor based detector, we use the photoacoustic effect to gauge the light intensity. To this end, the target gas species is hermetically sealed under excess pressure inside a miniature cell along with a MEMS microphone. Optical access to the cell is provided by a quartz window. The approach is particularly suitable for tunable diode laser spectroscopy in the mid-infrared range, where numerous molecules exhibit large absorption cross sections. Moreover, a frequency standard is integrated into the method since the number density and pressure inside the cell are constant. We demonstrate that the information extracted by our method is at least equivalent to that achieved using a semiconductor-based photon detector. As exemplary and highly relevant target gas, we have performed direct spectroscopy of methane at the R3-line of the 2v{sub 3} band at 6046.95 cm{sup −1} using both detector technologies in parallel. The results may be transferred to other infrared-active transitions without loss of generality.

  16. Capillary-discharge-based portable detector for chemical vapor monitoring

    International Nuclear Information System (INIS)

    Duan Yixiang; Su Yongxuan; Jin Zhe

    2003-01-01

    Conventional portable instruments for sensing chemical vapors have certain limitations for on-site use. In this article, we develop a genuinely portable detector that is sensitive, powerful, rugged, of simple design, and with very low power needs. Such a detector is based on a dry-cell battery-powered, capillary-discharge-based, microplasma source with optical emission detection. The microscale plasma source has very special features such as low thermal temperature and very low power needs. These features make it possible for the plasma source to be powered with a small dry-cell battery. A specially designed discharge chamber with minielectrodes can be configured to enhance the plasma stability and the system performance. A very small amount of inert gas can be used as sample carrier and plasma supporting gas. Inert gases possess high excitation potentials and produce high-energy metastable particles in the plasma. These particles provide sufficient energy to excite chemical species through Penning ionization and/or energy transfer from metastable species. A molecular emission spectrum can be collected with a palm-sized spectrometer through a collimated optical fiber. The spectrum can be displayed on a notebook computer. With this design and arrangement, the new detector provides high sensitivity for organic chemical species. The advantages and features of the newly developed detector include high sensitivity, simple structure, low cost, universal response, very low power consumption, compact volume with field portable capability, and ease of operation

  17. Feasibility of a neutron detector-dosemeter based on single-event upsets in dynamic random-access memories

    International Nuclear Information System (INIS)

    Phillips, G.W.; August, R.A.; Campbell, A.B.; Nelson, M.E.; Guardala, N.A.; Price, J.L.; Moscovitch, M.

    2002-01-01

    The feasibility was investigated of a solid-state neutron detector/dosemeter based on single-event upset (SEU) effects in dynamic random-access memories (DRAMs), commonly used in computer memories. Such a device, which uses a neutron converter material to produce a charged particle capable of causing an upset, would be light-weight, low-power, and could be read simply by polling the memory for bit flips. It would have significant advantages over standard solid-state neutron dosemeters which require off-line processing for track etching and analysis. Previous efforts at developing an SEU neutron detector/dosemeter have suffered from poor response, which can be greatly enhanced by selecting a modern high-density DRAM chip for SEU sensitivity and by using a thin 10 B film as a converter. Past attempts to use 10 B were not successful because the average alpha particle energy was insufficient to penetrate to the sensitive region of the memory. This can be overcome by removing the surface passivation layer before depositing the 10 B film or by implanting 10B directly into the chip. Previous experimental data show a 10 3 increase in neutron sensitivity by chips containing borosilicate glass, which could be used in an SEU detector. The results are presented of simulations showing that the absolute efficiency of an SEU neutron dosemeter can be increased by at least a factor of 1000 over earlier designs. (author)

  18. Conductivity based on selective etch for GaN devices and applications thereof

    Science.gov (United States)

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  19. HF-based clad etching of fibre Bragg grating and its utilization in ...

    Indian Academy of Sciences (India)

    2014-02-09

    Feb 9, 2014 ... Abstract. This paper presents a fiber Bragg grating (FBG) based sensor to study the concentration of laser dye in dye–ethanol solution. The FBG used in this experiment is indigenously developed using 255 nm UV radiations from copper vapour laser. The cladding of the FBG was partially removed using ...

  20. DIRC-based PID for the EIC central detector

    Energy Technology Data Exchange (ETDEWEB)

    Dzhygadlo, Roman; Schwarz, Carsten; Schwiening, Jochen [GSI Helmholtzzentrum fuer Schwerionenforschung GmbH, Darmstadt (Germany); Peters, Klaus [GSI Helmholtzzentrum fuer Schwerionenforschung GmbH, Darmstadt (Germany); Goethe-Universitaet Frankfurt (Germany); Collaboration: DIRC at EIC RD-Collaboration

    2015-07-01

    One of the key requirements for the central detector of a future Electron-Ion Collider (EIC) is to provide radially compact Particle Identification (PID) (e/π,π/K,K/p) over a wide momentum range. It is expected that the PID system will need to include one or more Cherenkov counters to achieve this goal. With a radial size of only a few cm, a DIRC counter (Detector of Internally Reflected Cherenkov light) is potentially an attractive option. The DIRC rate at EIC R and D Collaboration was formed by groups in the United States and Germany in 2011 with funding from DOE to investigate ways to extend the momentum coverage of DIRC counters for the EIC detector by up to 50% beyond the current state of the art. Possible design improvements include a complex focusing system, multi-anode sensors with smaller pixels, a time-based reconstruction algorithm, and chromatic dispersion mitigation. Both Geant and ray-tracing simulations are used to optimize the design configuration of the DIRC counter in terms of the performance and the best integration with the EIC detector. We discuss the current status of the design studies and the possible improvements to the Cherenkov angle resolution and the photon yield.

  1. Neutron detector based on lithiated sol-gel glass

    CERN Document Server

    Wallace, S; Miller, L F; Dai, S

    2002-01-01

    A neutron detector technology is demonstrated based on sup 6 Li/ sup 1 sup 0 B doped sol-gel glass. The detector is a sol-gel glass film coated silicon surface barrier detector (SBD). The ionized charged particles from (n, alpha) reactions in the sol-gel film enter the SBD and are counted. Data showing that gamma-ray pulse amplitudes interfere with identifying charged particles that exit the film layer with energies below the gamma-ray energy is presented. Experiments were performed showing the effect of sup 1 sup 3 sup 7 Cs and sup 6 sup 0 Co gamma rays on the SBD detector. The reaction product energies of the triton and alpha particles from sup 6 Li are significantly greater than the energies of the Compton electrons from high-energy gamma rays, allowing the measurement of neutrons in a high gamma background. The sol-gel radiation detection technology may be applicable to the characterization of transuranic waste, spent nuclear fuel and to the monitoring of stored plutonium.

  2. Silicon etch process

    International Nuclear Information System (INIS)

    Day, D.J.; White, J.C.

    1984-01-01

    A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

  3. Direct determination of bulk etching rate for LR-115-II solid state ...

    Indian Academy of Sciences (India)

    The thickness of the removed layer of the LR-115-II solid state nuclear track detector during etching is measured directly with a rather precise instrument. Dependence of bulk etching rate on temperature of the etching solution is investigated. It has been found that the bulk etching rate is 3.2 m/h at 60°C in 2.5 N NaOH of ...

  4. Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

    Science.gov (United States)

    Son, Dong-Hyeok; Jo, Young-Woo; Won, Chul-Ho; Lee, Jun-Hyeok; Seo, Jae Hwa; Lee, Sang-Heung; Lim, Jong-Won; Kim, Ji Heon; Kang, In Man; Cristoloveanu, Sorin; Lee, Jung-Hee

    2018-03-01

    Normally-off AlGaN/GaN-based MOS-HEMT has been fabricated by utilizing damage-free self-terminating tetramethyl ammonium hydroxide (TMAH) recess etching. The device exhibited a threshold voltage of +2.0 V with good uniformity, extremely small hysteresis of ∼20 mV, and maximum drain current of 210 mA/mm. The device also exhibited excellent off-state performances, such as breakdown voltage of ∼800 V with off-state leakage current as low as ∼10-12 A and high on/off current ratio (Ion/Ioff) of 1010. These excellent device performances are believed to be due to the high quality recessed surface, provided by the simple self-terminating TMAH etching.

  5. A risk-based approach to flammable gas detector spacing.

    Science.gov (United States)

    Defriend, Stephen; Dejmek, Mark; Porter, Leisa; Deshotels, Bob; Natvig, Bernt

    2008-11-15

    Flammable gas detectors allow an operating company to address leaks before they become serious, by automatically alarming and by initiating isolation and safe venting. Without effective gas detection, there is very limited defense against a flammable gas leak developing into a fire or explosion that could cause loss of life or escalate to cascading failures of nearby vessels, piping, and equipment. While it is commonly recognized that some gas detectors are needed in a process plant containing flammable gas or volatile liquids, there is usually a question of how many are needed. The areas that need protection can be determined by dispersion modeling from potential leak sites. Within the areas that must be protected, the spacing of detectors (or alternatively, number of detectors) should be based on risk. Detector design can be characterized by spacing criteria, which is convenient for design - or alternatively by number of detectors, which is convenient for cost reporting. The factors that influence the risk are site-specific, including process conditions, chemical composition, number of potential leak sites, piping design standards, arrangement of plant equipment and structures, design of isolation and depressurization systems, and frequency of detector testing. Site-specific factors such as those just mentioned affect the size of flammable gas cloud that must be detected (within a specified probability) by the gas detection system. A probability of detection must be specified that gives a design with a tolerable risk of fires and explosions. To determine the optimum spacing of detectors, it is important to consider the probability that a detector will fail at some time and be inoperative until replaced or repaired. A cost-effective approach is based on the combined risk from a representative selection of leakage scenarios, rather than a worst-case evaluation. This means that probability and severity of leak consequences must be evaluated together. In marine and

  6. Prevention of sidewall redeposition of etched byproducts in the dry Au etch process

    International Nuclear Information System (INIS)

    Aydemir, A; Akin, T

    2012-01-01

    In this paper we present a new technique of etching thin Au film in a dual frequency inductively coupled plasma (ICP) system on Si substrate to prevent the redeposition of etched Au particles over the sidewall of the masking material known as veils. First, the effect of the lithography step was investigated. Then the effects of etch chemistry and the process parameters on the redeposition of etched Au particles on the sidewall of the masking material were investigated. The redeposition effect was examined by depositing a thin Ti film over the masking material acting as a hard mask. The results showed that depositing a thin Ti film over the masking material prevents the formation of veils after etching Au in plasma environments for submicron size structures. Based on the results of this study, we propose a new technique that completely eliminates formation of veils after etching Au in plasma environments for submicron size structures. (paper)

  7. Novel back-channel-etch process flow based a-IGZO TFTs for circuit and display applications on PEN foil

    NARCIS (Netherlands)

    Nag, M.; Rockele, M.; Steudel, S.; Chasin, A.; Myny, K.; Bhoolokam, A.; Willegems, M.; Smout, S.; Vicca, P.; Ameys, M.; Ke, T.H.; Schols, S.; Genoe, J.; Steen, J.L. P.J. van der; Groeseneken, G.; Heremans, P.

    2014-01-01

    In this study, we report high-quality amorphous indiunrv-galiium-zinc-oxide (a-IGZO) thinfilm transistors (TFTs) fabricated on a polyethylene naphthalate foil using a new back-channel-etch (BCE) process flow. The BCE flow allows a better scalability of TFTs for high-resolution backplanes and related

  8. CH4/H2/Ar electron cyclotron resonance plasma etching for GaAs-based field effect transistors

    NARCIS (Netherlands)

    Hassel, van J.G.; Es, van C.M.; Nouwens, P.A.M.; Maahury, J.H.; Kaufmann, L.M.F.

    1995-01-01

    Electron cyclotron resonance (ECR) plasma etch processes with CH4/H2/AR have been investigated on different III–Vsemiconductor materials (GaAs, AlGaAs, InGaAs, and InP). The passivation depth as a function of the GaAs carrierconcentration and the recovery upon annealing at different temperatures

  9. Hydrogen detector

    International Nuclear Information System (INIS)

    Kumagaya, Hiromichi; Yoshida, Kazuo; Sanada, Kazuo; Chigira, Sadao.

    1994-01-01

    The present invention concerns a hydrogen detector for detecting water-sodium reaction. The hydrogen detector comprises a sensor portion having coiled optical fibers and detects hydrogen on the basis of the increase of light transmission loss upon hydrogen absorption. In the hydrogen detector, optical fibers are wound around and welded to the outer circumference of a quartz rod, as well as the thickness of the clad layer of the optical fiber is reduced by etching. With such procedures, size of the hydrogen detecting sensor portion can be decreased easily. Further, since it can be used at high temperature, diffusion rate is improved to shorten the detection time. (N.H.)

  10. Method to improve the evaluation of a combination track-etch dosimeter/spectrometer

    International Nuclear Information System (INIS)

    Brackenbush, L.W.; Parkhurst, M.A.; Hadlock, D.E.; Faust, L.G.

    1983-09-01

    A paper is summarized which describes a method of determining the neutron energy spectrum through spectrum unfolding techniques to more accurately assess the dose equivalent from track-etch dosimeters. A mathematical technique is described which can be used in conjunction with the neutron detectors to more accurately estimate neutron dose equivalent. The technique is based upon solutions to a system of Fredholm integral equations of the first type

  11. ECE laboratory in the Vinca Institute - its basic characteristics and fundamentals of electrochemical etching on polycarbonate

    International Nuclear Information System (INIS)

    Zunic, Z.S.; Ujic, P.; Celikovic, I.; Fujimoto, K.

    2003-01-01

    This paper deals with the introductory aspects of the Electrochemical Etching Laboratory installed at the VINCA Institute in the year 2003. The main purpose of the laboratory is its field application for radon and thoron large-scale survey using passive radon/thoron UFO type detectors. Since the etching techniques together with the laboratory equipment were transferred from the National Institute of Radiological Sciences, Chiba, Japan, it was necessary for both etching conditions to be confirmed and to be checked up, i. e., bulk etching speeds of chemical etching and electrochemical etching in the VINCA Electrochemical Etching Laboratory itself. Beside this initial step, other concerns were taken into consideration in this preliminary experimental phase such as the following: the measurable energy range of the polycarbonate film, background etch pit density of the film and its standard deviation and reproducibility of the response to alpha particles for different sets of etchings. (author)

  12. GPU based Monte Carlo for PET image reconstruction: detector modeling

    International Nuclear Information System (INIS)

    Légrády; Cserkaszky, Á; Lantos, J.; Patay, G.; Bükki, T.

    2011-01-01

    Monte Carlo (MC) calculations and Graphical Processing Units (GPUs) are almost like the dedicated hardware designed for the specific task given the similarities between visible light transport and neutral particle trajectories. A GPU based MC gamma transport code has been developed for Positron Emission Tomography iterative image reconstruction calculating the projection from unknowns to data at each iteration step taking into account the full physics of the system. This paper describes the simplified scintillation detector modeling and its effect on convergence. (author)

  13. Multichannel prototype of coordinate detector based on segmented straws

    International Nuclear Information System (INIS)

    Gusakov, Yu.V.; Davkov, V.I.; Davkov, K.I.; Zhukov, I.A.; Lutsenko, V.M.; Myalkovskij, V.V.; Peshekhonov, V.D.; Savenkov, A.A.

    2010-01-01

    The design and assembly technology of a detector prototype based on segmented straws is considered. The granularity of the prototype is 4 cm 2 . The prototype has a sensitive area of 400 x 200 mm, and contains two straw planes displaced against each other by 2 mm. The number of registration channels is 360. Preliminary results of the bench study of the prototype are presented

  14. Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Landesman, Jean-Pierre, E-mail: jean-pierre.landesman@univ-rennes1.fr [Institut de Physique de Rennes, CNRS-UMR 6251, Université Rennes 1, F-35042 Rennes (France); Jiménez, Juan; Torres, Alfredo [GdS Optronlab, Dpto. Fisica de la Materia Condensada, Universidad de Valladolid, 47011 Valladolid (Spain); Levallois, Christophe; Léger, Yoan; Beck, Alexandre [UMR FOTON, CNRS, INSA-Rennes, 20 avenue des buttes de Coësmes, F-35708 Rennes (France); Pommereau, Frédéric [III-V Lab, 1 Avenue Augustin Fresnel, RD128, F-91767 Palaiseau (France); Frigeri, Cesare [CNR-IMEM Istituto, Parco area delle Scienze 37/A, 43010 Parma (Italy); Rhallabi, Ahmed [Institut des Matériaux Jean-Rouxel, CNRS-UMR 6502, Université Nantes 1, F-44322 Nantes (France)

    2016-07-15

    The general objective is the investigation of the defects formed by dry etching tools such as those involved in the fabrication of photonic devices with III–V semiconductors. Emphasis is put on plasma exposures with chlorine-based chemistries. In addition to identifying these defects and describing their effects on the electro-optic and structural properties, the long-term target would be to predict the impact on the parameters of importance for photonic devices, and possibly include these predictions in their design. The work is first centered on explaining the experimental methodology. This methodology starts with the design and growth of a quantum well structure on indium phosphide, including ternary indium arsenide/phosphide quantum wells with graded arsenic/phosphor composition. These samples have then been characterized by luminescence methods (photo- and cathodoluminescence), high-resolution transmission electron microscopy, and secondary ion mass spectrometry. As one of the parameters of importance in this study, the authors have also included the doping level. The samples have been exposed to the etching plasmas for “short” durations that do not remove completely the quantum wells, but change their optical signature. No masking layer with lithographic features was involved as this work is purely oriented to study the interaction between the plasma and the samples. A significant difference in the luminescence spectra of the as-grown undoped and doped samples is observed. A mechanism describing the effect of the built-in electric field appearing as a consequence of the doping profile is proposed. This mechanism involves quantum confined Stark effect and electric-field induced carrier escape from the quantum wells. In the following part, the effects of exposure to various chlorine-based plasmas were explored. Differences are again observed between the undoped and doped samples, especially for chemistries containing silicon tetrachloride. Secondary ion

  15. SENTIRAD-An innovative personal radiation detector based on a scintillation detector and a silicon photomultiplier

    International Nuclear Information System (INIS)

    Osovizky, A.; Ginzburg, D.; Manor, A.; Seif, R.; Ghelman, M.; Cohen-Zada, I.; Ellenbogen, M.; Bronfenmakher, V.; Pushkarsky, V.; Gonen, E.; Mazor, T.; Cohen, Y.

    2011-01-01

    The alarming personal radiation detector (PRD) is a device intended for Homeland Security (HLS) applications. This portable device is designed to be worn or carried by security personnel to detect photon-emitting radioactive materials for the purpose of crime prevention. PRD is required to meet the scope of specifications defined by various HLS standards for radiation detection. It is mandatory that the device be sensitive and simultaneously small, pocket-sized, of robust mechanical design and carriable on the user's body. To serve these specialized purposes and requirements, we developed the SENTIRAD, a new radiation detector designed to meet the performance criteria established for counterterrorist applications. SENTIRAD is the first commercially available PRD based on a CsI(Tl) scintillation crystal that is optically coupled with a silicon photomultiplier (SiPM) serving as a light sensor. The rapidly developing technology of SiPM, a multipixel semiconductor photodiode that operates in Geiger mode, has been thoroughly investigated in previous studies. This paper presents the design considerations, constraints and radiological performance relating to the SENTIRAD radiation sensor.

  16. Spectral artefacts post sputter-etching and how to cope with them - A case study of XPS on nitride-based coatings using monoatomic and cluster ion beams

    Science.gov (United States)

    Lewin, Erik; Counsell, Jonathan; Patscheider, Jörg

    2018-06-01

    The issue of artefacts due to sputter-etching has been investigated for a group of AlN-based thin film materials with varying thermodynamical stability. Stability of the materials was controlled by alloying AlN with the group 14 elements Si, Ge or Sn in two different concentrations. The coatings were sputter-etched with monoatomic Ar+ with energies between 0.2 and 4.0 keV to study the sensitivity of the materials for sputter damage. The use of Arn+ clusters to remove an oxidised surface layer was also evaluated for a selected sample. The spectra were compared to pristine spectra obtained after in-vacuo sample transfer from the synthesis chamber to the analysis instrument. It was found that the all samples were affected by high energy (4 keV) Ar+ ions to varying degrees. The determining factors for the amount of observed damage were found to be the materials' enthalpy of formation, where a threshold value seems to exist at approximately -1.25 eV/atom (∼-120 kJ/mol atoms). For each sample, the observed amount of damage was found to have a linear dependence to the energy deposited by the ion beam per volume removed material. Despite the occurrence of sputter-damage in all samples, etching settings that result in almost artefact-free spectral data were found; using either very low energy (i.e. 200 eV) monoatomic ions, or an appropriate combination of ion cluster size and energy. The present study underlines that analysis post sputter-etching must be carried out with an awareness of possible sputter-induced artefacts.

  17. A beam monitor based on MPGD detectors for hadron therapy

    Directory of Open Access Journals (Sweden)

    Altieri P. R.

    2018-01-01

    Full Text Available Remarkable scientific and technological progress during the last years has led to the construction of accelerator based facilities dedicated to hadron therapy. This kind of technology requires precise and continuous control of position, intensity and shape of the ions or protons used to irradiate cancers. Patient safety, accelerator operation and dose delivery should be optimized by a real time monitoring of beam intensity and profile during the treatment, by using non-destructive, high spatial resolution detectors. In the framework of AMIDERHA (AMIDERHA - Enhanced Radiotherapy with HAdron project funded by the Ministero dell’Istruzione, dell’Università e della Ricerca (Italian Ministry of Education and Research the authors are studying and developing an innovative beam monitor based on Micro Pattern Gaseous Detectors (MPDGs characterized by a high spatial resolution and rate capability. The Monte Carlo simulation of the beam monitor prototype was carried out to optimize the geometrical set up and to predict the behavior of the detector. A first prototype has been constructed and successfully tested using 55Fe, 90Sr and also an X-ray tube. Preliminary results on both simulations and tests will be presented.

  18. Nanoscale photoelectron ionisation detector based on lanthanum hexaboride

    International Nuclear Information System (INIS)

    Zimmer, C.M.; Kunze, U.; Schubert, J.; Hamann, S.; Doll, T.

    2011-01-01

    A nanoscale ioniser is presented exceeding the limitation of conventional photoionisation detectors. It employs accelerated photoelectrons that allow obtaining molecule specificity by the tuning of ionisation energies. The material lanthanum hexaboride (LaB 6 ) is used as air stable photo cathode. Thin films of that material deposited by pulsed laser deposition (PLD) show quantum efficiency (QE) in the range of 10 -5 which is comparable to laser photo stimulation results. A careful treatment of the material yields reasonable low work functions even after surface reoxidation which opens up the possibility of using ultraviolet light emitting diodes (UV LEDs) in replacement of discharge lamps. Schematic diagram of a photoelectron ionisation detector (PeID) operating by an electron emitter based on the photoelectric effect of lanthanum hexaboride. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Track based alignment of the Mu3e detector

    Energy Technology Data Exchange (ETDEWEB)

    Hartenstein, Ulrich [Institut fuer Kernphysik, Universitaet Mainz (Germany)

    2016-07-01

    The Mu3e experiment searches for the lepton flavor violating decay μ{sup +} → e{sup +}e{sup -}e{sup +} with a sensitivity goal for the branching fraction of better than 10{sup -16}. This process is heavily supressed in the standard model of particle physics (BR < 10{sup -50}) which makes an observation of this decay a clear indication of new physics. For track reconstruction, four barrel shaped layers consisting of about 3000 high-voltage monolithic active pixel sensors (HV-MAPS) are used. The position, orientation and possible deformations of these sensors must be known to greater precision than the assembly tolerances. A track based alignment via the General Broken Lines fit and the Millepede-II algorithm will be used to achieve this precision in the final detector. The talk discusses a study of the required alignment precision and preparations for aligning the detector using a detailed simulation.

  20. ZnO nanodisk based UV detectors with printed electrodes.

    Science.gov (United States)

    Alenezi, Mohammad R; Alshammari, Abdullah S; Alzanki, Talal H; Jarowski, Peter; Henley, Simon John; Silva, S Ravi P

    2014-04-08

    The fabrication of highly functional materials for practical devices requires a deep understanding of the association between morphological and structural properties and applications. A controlled hydrothermal method to produce single crystal ZnO hexagonal nanodisks, nanorings, and nanoroses using a mixed solution of zinc sulfate (ZnSO4) and hexamethylenetetramine (HMTA) without the need of catalysts, substrates, or templates at low temperature (75 °C) is introduced. Metal-semiconductor-metal (MSM) ultraviolet (UV) detectors were fabricated based on individual and multiple single-crystal zinc oxide (ZnO) hexagonal nanodisks. High quality single crystal individual nanodisk devices were fabricated with inkjet-printed silver electrodes. The detectors fabricated show record photoresponsivity (3300 A/W) and external quantum efficiency (1.2 × 10(4)), which we attribute to the absence of grain boundaries in the single crystal ZnO nanodisk and the polarity of its exposed surface.

  1. Controlled ion track etching

    Science.gov (United States)

    George, J.; Irkens, M.; Neumann, S.; Scherer, U. W.; Srivastava, A.; Sinha, D.; Fink, D.

    2006-03-01

    It is a common practice since long to follow the ion track-etching process in thin foils via conductometry, i.e . by measurement of the electrical current which passes through the etched track, once the track breakthrough condition has been achieved. The major disadvantage of this approach, namely the absence of any major detectable signal before breakthrough, can be avoided by examining the track-etching process capacitively. This method allows one to define precisely not only the breakthrough point before it is reached, but also the length of any non-transient track. Combining both capacitive and conductive etching allows one to control the etching process perfectly. Examples and possible applications are given.

  2. Plasma etching of patterned tungsten

    International Nuclear Information System (INIS)

    Franssila, S.

    1993-01-01

    Plasma etching of tungsten is discussed from the viewpoint of thin film structure and integrated circuit process engineering. The emphasis is on patterned tungsten etching for silicon device and X-ray mask fabrication. After introducing tungsten etch chemistries and mechanisms, microstructural aspects of tungsten films (crystal structure, grain size, film density, defects, impurities) in relation to etching are discussed. Approaches to etch process optimization are presented, and the current state-of-the-art of patterned tungsten etching is reviewed. (orig.)

  3. The remote monitoring system of BESⅢ detector based on web

    International Nuclear Information System (INIS)

    Zhang Yining; Ye Mei; Zhao Shujun

    2011-01-01

    It designed a remote monitoring system of BESⅢ experiment based on web. The software of the system is mainly based on module programming. The Ajax technology and the MVC pattern is used in system framework construction. The function of selecting multiple tables is realized by structural checkbox tree using jstree library. Data chart is plotted by High Charts library. The updating of data curve is realized by the method of calculating the time span between the real data record to measure the http request. The system design can be used by detector monitoring system like BESⅢ. (authors)

  4. Graphene-Based Josephson-Junction Single-Photon Detector

    Science.gov (United States)

    Walsh, Evan D.; Efetov, Dmitri K.; Lee, Gil-Ho; Heuck, Mikkel; Crossno, Jesse; Ohki, Thomas A.; Kim, Philip; Englund, Dirk; Fong, Kin Chung

    2017-08-01

    We propose to use graphene-based Josephson junctions (GJJs) to detect single photons in a wide electromagnetic spectrum from visible to radio frequencies. Our approach takes advantage of the exceptionally low electronic heat capacity of monolayer graphene and its constricted thermal conductance to its phonon degrees of freedom. Such a system could provide high-sensitivity photon detection required for research areas including quantum information processing and radio astronomy. As an example, we present our device concepts for GJJ single-photon detectors in both the microwave and infrared regimes. The dark count rate and intrinsic quantum efficiency are computed based on parameters from a measured GJJ, demonstrating feasibility within existing technologies.

  5. The Effect of Personalization on Smartphone-Based Fall Detectors

    Directory of Open Access Journals (Sweden)

    Carlos Medrano

    2016-01-01

    Full Text Available The risk of falling is high among different groups of people, such as older people, individuals with Parkinson's disease or patients in neuro-rehabilitation units. Developing robust fall detectors is important for acting promptly in case of a fall. Therefore, in this study we propose to personalize smartphone-based detectors to boost their performance as compared to a non-personalized system. Four algorithms were investigated using a public dataset: three novelty detection algorithms—Nearest Neighbor (NN, Local Outlier Factor (LOF and One-Class Support Vector Machine (OneClass-SVM—and a traditional supervised algorithm, Support Vector Machine (SVM. The effect of personalization was studied for each subject by considering two different training conditions: data coming only from that subject or data coming from the remaining subjects. The area under the receiver operating characteristic curve (AUC was selected as the primary figure of merit. The results show that there is a general trend towards the increase in performance by personalizing the detector, but the effect depends on the individual being considered. A personalized NN can reach the performance of a non-personalized SVM (average AUC of 0.9861 and 0.9795, respectively, which is remarkable since NN only uses activities of daily living for training.

  6. OBSERVATIONAL SELECTION EFFECTS WITH GROUND-BASED GRAVITATIONAL WAVE DETECTORS

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Hsin-Yu; Holz, Daniel E. [University of Chicago, Chicago, Illinois 60637 (United States); Essick, Reed; Vitale, Salvatore; Katsavounidis, Erik [LIGO, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2017-01-20

    Ground-based interferometers are not perfect all-sky instruments, and it is important to account for their behavior when considering the distribution of detected events. In particular, the LIGO detectors are most sensitive to sources above North America and the Indian Ocean, and as the Earth rotates, the sensitive regions are swept across the sky. However, because the detectors do not acquire data uniformly over time, there is a net bias on detectable sources’ right ascensions. Both LIGO detectors preferentially collect data during their local night; it is more than twice as likely to be local midnight than noon when both detectors are operating. We discuss these selection effects and how they impact LIGO’s observations and electromagnetic (EM) follow-up. Beyond galactic foregrounds associated with seasonal variations, we find that equatorial observatories can access over 80% of the localization probability, while mid-latitudes will access closer to 70%. Facilities located near the two LIGO sites can observe sources closer to their zenith than their analogs in the south, but the average observation will still be no closer than 44° from zenith. We also find that observatories in Africa or the South Atlantic will wait systematically longer before they can begin observing compared to the rest of the world; though, there is a preference for longitudes near the LIGOs. These effects, along with knowledge of the LIGO antenna pattern, can inform EM follow-up activities and optimization, including the possibility of directing observations even before gravitational-wave events occur.

  7. OBSERVATIONAL SELECTION EFFECTS WITH GROUND-BASED GRAVITATIONAL WAVE DETECTORS

    International Nuclear Information System (INIS)

    Chen, Hsin-Yu; Holz, Daniel E.; Essick, Reed; Vitale, Salvatore; Katsavounidis, Erik

    2017-01-01

    Ground-based interferometers are not perfect all-sky instruments, and it is important to account for their behavior when considering the distribution of detected events. In particular, the LIGO detectors are most sensitive to sources above North America and the Indian Ocean, and as the Earth rotates, the sensitive regions are swept across the sky. However, because the detectors do not acquire data uniformly over time, there is a net bias on detectable sources’ right ascensions. Both LIGO detectors preferentially collect data during their local night; it is more than twice as likely to be local midnight than noon when both detectors are operating. We discuss these selection effects and how they impact LIGO’s observations and electromagnetic (EM) follow-up. Beyond galactic foregrounds associated with seasonal variations, we find that equatorial observatories can access over 80% of the localization probability, while mid-latitudes will access closer to 70%. Facilities located near the two LIGO sites can observe sources closer to their zenith than their analogs in the south, but the average observation will still be no closer than 44° from zenith. We also find that observatories in Africa or the South Atlantic will wait systematically longer before they can begin observing compared to the rest of the world; though, there is a preference for longitudes near the LIGOs. These effects, along with knowledge of the LIGO antenna pattern, can inform EM follow-up activities and optimization, including the possibility of directing observations even before gravitational-wave events occur.

  8. Inductively coupled plasma etching of III-V antimonides in BCl3/SiCl4 etch chemistry

    International Nuclear Information System (INIS)

    Swaminathan, K.; Janardhanan, P.E.; Sulima, O.V.

    2008-01-01

    Inductively coupled plasma etching of GaSb using BCl 3 /SiCl 4 etch chemistry has been investigated. The etch rates were studied as a function of bias power, inductively coupled plasma source power, plasma chemistry and chamber pressure. The etched surfaces remain smooth and stoichiometric over the entire range of plasma conditions investigated. The knowledge gained in etching GaSb was applied to etching AlGaAsSb and InGaAsSb in order to fabricate heterojunction phototransistors. As expected, InGaAsSb etch rate was much lower compared to the corresponding value for GaSb, mainly due to the relatively low volatility of indium chlorides. For a wide range of plasma conditions, the selectivity between GaSb and AlGaAsSb was close to unity, which is desirable for fabricating etched mirrors and gratings for Sb-based mid-infrared laser diodes. The surface roughness and the etch profile were examined for the etched GaSb, AlGaAsSb and InGaAsSb samples using scanning electron microscope. The high etch rates achieved (∼ 4 μm/min) facilitated deep etching of GaSb. A single layer, soft mask (AZ-4903 photoresist) was used to etch GaSb, with etch depth ∼ 90 μm. The deep dry etching of GaSb has many important applications including etching substrate windows for backside-illuminated photodetectors for the mid-infrared wavelength range

  9. Refractive microlensarray made of silver-halide sensitized gelatin (SHSG) etched by enzyme with SLM-based lithography

    Science.gov (United States)

    Guo, Xiaowei; Chen, Mingyong; Zhu, Jianhua; Ma, Yanqin; Du, Jinglei; Guo, Yongkang; Du, Chunlei

    2006-01-01

    A novel method for the fabrication of continuous micro-optical components is presented in this paper. It employs a computer controlled digital-micromirror-device(DMD TM) as a switchable projection mask and silver-halide sensitized gelatin (SHSG) as recording material. By etching SHSG with enzyme solution, the micro-optical components with relief modulation can be generated through special processing procedures. The principles of etching SHSG with enzyme and theoretical analysis for deep etching are also discussed in detail, and the detailed quantitative experiments on the processing procedures are conducted to determine optimum technique parameters. A good linear relationship within a depth range of 4μm was experimentally obtained between exposure dose and relief depth. At last, the microlensarray with 256.8μm radius and 2.572μm depth was achieved. This method is simple, cheap and the aberration in processing procedures can be corrected in the step of designing mask, so it is a practical method to fabricate good continuous profile for low-volume production.

  10. Nanorods on surface of GaN-based thin-film LEDs deposited by post-annealing after photo-assisted chemical etching

    OpenAIRE

    Chen, Lung-Chien; Lin, Wun-Wei; Liu, Te-Yu

    2017-01-01

    This study investigates the optoelectronic characteristics of gallium nitride (GaN)-based thin-film light-emitting diodes (TF-LEDs) that are formed by a two-step transfer process that involves wet etching and post-annealing. In the two-step transfer process, GaN LEDs were stripped from sapphire substrates by the laser lift-off (LLO) method using a KrF laser and then transferred onto ceramic substrates. Ga-K nanorods were formed on the surface of the GaN-based TF-LEDs following photo-assisted ...

  11. The MAPS based PXL vertex detector for the STAR experiment

    Science.gov (United States)

    Contin, G.; Anderssen, E.; Greiner, L.; Schambach, J.; Silber, J.; Stezelberger, T.; Sun, X.; Szelezniak, M.; Vu, C.; Wieman, H.; Woodmansee, S.

    2015-03-01

    The Heavy Flavor Tracker (HFT) was installed in the STAR experiment for the 2014 heavy ion run of RHIC. Designed to improve the vertex resolution and extend the measurement capabilities in the heavy flavor domain, the HFT is composed of three different silicon detectors based on CMOS monolithic active pixels (MAPS), pads and strips respectively, arranged in four concentric cylinders close to the STAR interaction point. The two innermost HFT layers are placed at a radius of 2.7 and 8 cm from the beam line, respectively, and accommodate 400 ultra-thin (50 μ m) high resolution MAPS sensors arranged in 10-sensor ladders to cover a total silicon area of 0.16 m2. Each sensor includes a pixel array of 928 rows and 960 columns with a 20.7 μ m pixel pitch, providing a sensitive area of ~ 3.8 cm2. The architecture is based on a column parallel readout with amplification and correlated double sampling inside each pixel. Each column is terminated with a high precision discriminator, is read out in a rolling shutter mode and the output is processed through an integrated zero suppression logic. The results are stored in two SRAM with ping-pong arrangement for a continuous readout. The sensor features 185.6 μ s readout time and 170 mW/cm2 power dissipation. The detector is air-cooled, allowing a global material budget as low as 0.39% on the inner layer. A novel mechanical approach to detector insertion enables effective installation and integration of the pixel layers within an 8 hour shift during the on-going STAR run.In addition to a detailed description of the detector characteristics, the experience of the first months of data taking will be presented in this paper, with a particular focus on sensor threshold calibration, latch-up protection procedures and general system operations aimed at stabilizing the running conditions. Issues faced during the 2014 run will be discussed together with the implemented solutions. A preliminary analysis of the detector performance

  12. The MAPS based PXL vertex detector for the STAR experiment

    International Nuclear Information System (INIS)

    Contin, G.; Anderssen, E.; Greiner, L.; Silber, J.; Stezelberger, T.; Vu, C.; Wieman, H.; Woodmansee, S.; Schambach, J.; Sun, X.; Szelezniak, M.

    2015-01-01

    The Heavy Flavor Tracker (HFT) was installed in the STAR experiment for the 2014 heavy ion run of RHIC. Designed to improve the vertex resolution and extend the measurement capabilities in the heavy flavor domain, the HFT is composed of three different silicon detectors based on CMOS monolithic active pixels (MAPS), pads and strips respectively, arranged in four concentric cylinders close to the STAR interaction point. The two innermost HFT layers are placed at a radius of 2.7 and 8 cm from the beam line, respectively, and accommodate 400 ultra-thin (50 μ m) high resolution MAPS sensors arranged in 10-sensor ladders to cover a total silicon area of 0.16 m 2 . Each sensor includes a pixel array of 928 rows and 960 columns with a 20.7 μ m pixel pitch, providing a sensitive area of ∼ 3.8 cm 2 . The architecture is based on a column parallel readout with amplification and correlated double sampling inside each pixel. Each column is terminated with a high precision discriminator, is read out in a rolling shutter mode and the output is processed through an integrated zero suppression logic. The results are stored in two SRAM with ping-pong arrangement for a continuous readout. The sensor features 185.6 μ s readout time and 170 mW/cm 2 power dissipation. The detector is air-cooled, allowing a global material budget as low as 0.39% on the inner layer. A novel mechanical approach to detector insertion enables effective installation and integration of the pixel layers within an 8 hour shift during the on-going STAR run.In addition to a detailed description of the detector characteristics, the experience of the first months of data taking will be presented in this paper, with a particular focus on sensor threshold calibration, latch-up protection procedures and general system operations aimed at stabilizing the running conditions. Issues faced during the 2014 run will be discussed together with the implemented solutions. A preliminary analysis of the detector

  13. Study of the characteristics of ionizing particles record of CR-39 track detectors

    International Nuclear Information System (INIS)

    Brandao, Luis Eduardo Barreira

    1983-01-01

    The bulk and track etching proprieties of a new Solid State Nuclear Track Detector CR-39 were investigated under different etching conditions. The discussion is based on results obtained using aqueous solutions of KOH with addition of alcoholic solvent to aqueous solutions. It was found that track registration sensitivity can be dramatically changed by using the proper chemical treatment. A method to enlarge and dye etch tracks to be viewed by simple projection on a screen is discussed. The applications of CR-39 in neutron fluence measurements are shown. Graphs are presented of the densities of the registered traces by the detector as a function of etch time both for samples with and without a polycarbonate radiator. (author)

  14. SU-8 etching in inductively coupled oxygen plasma

    DEFF Research Database (Denmark)

    Rasmussen, Kristian Hagsted; Keller, Stephan Sylvest; Jensen, Flemming

    2013-01-01

    Structuring or removal of the epoxy based, photo sensitive polymer SU-8 by inductively coupled plasma reactive ion etching (ICP-RIE) was investigated as a function of plasma chemistry, bias power, temperature, and pressure. In a pure oxygen plasma, surface accumulation of antimony from the photo......-initiator introduced severe roughness and reduced etch rate significantly. Addition of SF6 to the plasma chemistry reduced the antimony surface concentration with lower roughness and higher etch rate as an outcome. Furthermore the etch anisotropy could be tuned by controlling the bias power. Etch rates up to 800 nm...

  15. Dry etching for microelectronics

    CERN Document Server

    Powell, RA

    1984-01-01

    This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book

  16. Etching in microsystem technology

    CERN Document Server

    Kohler, Michael

    2008-01-01

    Microcomponents and microdevices are increasingly finding application in everyday life. The specific functions of all modern microdevices depend strongly on the selection and combination of the materials used in their construction, i.e., the chemical and physical solid-state properties of these materials, and their treatment. The precise patterning of various materials, which is normally performed by lithographic etching processes, is a prerequisite for the fabrication of microdevices.The microtechnical etching of functional patterns is a multidisciplinary area, the basis for the etching p

  17. Etch induction time in cellulose nitrate: a new particle identification parameter

    International Nuclear Information System (INIS)

    Ruddy, F.H.; Knowles, H.B.; Luckstead, S.C.; Tripard, G.E.

    1977-01-01

    By the use of a 'continuous etch' method, it has been ascertained that particle tracks do not appear in cellulose nitrate track detectors until a certain finite time after etch has been started: this etch induction time may provide a unique signal for distinguishing ions of different atomic number, Z, and possibly also resolving the mass, M, of such ions. Empirical relations between etch induction time and various experimental quantities are described, as is a simple theory of the cause of etch induction time, which can be related to experimental evidence on hand. There is reason to believe that etch induction time appears in other types of plastic track detectors and may indeed be a general phenomenon in all track detectors. (Auth.)

  18. Soucreless efficiency calibration for HPGe detector based on medical images

    International Nuclear Information System (INIS)

    Chen Chaobin; She Ruogu; Xiao Gang; Zuo Li

    2012-01-01

    Digital phantom of patient and region of interest (supposed to be filled with isotropy volume source) are built from medical CT images. They are used to calculate the detection efficiency of HPGe detectors located outside of human body by sourceless calibration method based on a fast integral technique and MCNP code respectively, and the results from two codes are in good accord besides a max difference about 5% at intermediate energy region. The software produced in this work are in better behavior than Monte Carlo code not only in time consume but also in complexity of problem to solve. (authors)

  19. Recent state of CdTe-based radiation detectors

    International Nuclear Information System (INIS)

    Ohno, R.

    2004-01-01

    Recent state for development of CdTe-based radiation detectors is reviewed. The progress of the technologies such as the crystal growth of CdTe and CdZnTe, the deposition of electrodes on the crystal, the design of read out ASIC, and the bonding between crystal and ASIC, opened the way for the development of imaging devices for practical uses. A X-ray imager for non destructive inspections and a gamma ray imager for small animal radioisotope experiments or nuclear medicine are presented as examples. (author)

  20. Automatic read out system for superheated emulsion based neutron detector

    International Nuclear Information System (INIS)

    Meena, J.P.; Parihar, A.; Vaijapurkar, S.G.; Mohan, Anand

    2010-01-01

    Full text: Defence Laboratory, Jodhpur (DLJ) has developed superheated emulsion technology for neutron and gamma measurements. The laboratory has attempted to develop reader system to display neutron dose and dose rate based on acoustic technique. The paper presents a microcontroller based automatic reader system for neutron measurements using indigenously developed superheated emulsion detector. The system is designed for real time counting of bubbles formed in superheated emulsion detector. A piezoelectric transducer is used for sensing bubble acoustic. The front end of system is mainly consisting of specially designed signal conditioning unit consisted of piezoelectric transducer, an amplifier, a high-pass filter, a differentiator, a comparator and monostable multivibrator. The system is based on PIC 18F6520 microcontroller having large internal SRAM, 10-bit internal ADC, I 2 C interface, UART/USART modules. The paper also describes the design of following peripheral units interfaced to microcontroller temperature and battery monitoring, display, keypad and a serial communication. The reader system measures and displays neutron dose and dose rate, number of bubble and elapsed time. The developed system can be used for detecting very low neutron leakage in the accelerators, nuclear reactors and nuclear submarines. The important features of system are compact, light weight, cost effective and high neutron sensitivity. The prototype was tested and evaluated by exposing to 241 Am-Be neutron source and results have been reported

  1. Design and Fabrication of the Second-Generation KID-Based Light Detectors of CALDER

    Science.gov (United States)

    Colantoni, I.; Cardani, L.; Casali, N.; Cruciani, A.; Bellini, F.; Castellano, M. G.; Cosmelli, C.; D'Addabbo, A.; Di Domizio, S.; Martinez, M.; Tomei, C.; Vignati, M.

    2018-04-01

    The goal of the cryogenic wide-area light detectors with excellent resolution project is the development of light detectors with large active area and noise energy resolution smaller than 20 eV RMS using phonon-mediated kinetic inductance detectors (KIDs). The detectors are developed to improve the background suppression in large-mass bolometric experiments such as CUORE, via the double readout of the light and the heat released by particles interacting in the bolometers. In this work we present the fabrication process, starting from the silicon wafer arriving to the single chip. In the first part of the project, we designed and fabricated KID detectors using aluminum. Detectors are designed by means of state-of-the-art software for electromagnetic analysis (SONNET). The Al thin films (40 nm) are evaporated on high-quality, high-resistivity (> 10 kΩ cm) Si(100) substrates using an electron beam evaporator in a HV chamber. Detectors are patterned in direct-write mode, using electron beam lithography (EBL), positive tone resist poly-methyl methacrylate and lift-off process. Finally, the chip is diced into 20 × 20 mm2 chips and assembled in a holder OFHC (oxygen-free high conductivity) copper using PTFE support. To increase the energy resolution of our detectors, we are changing the superconductor to sub-stoichiometric TiN (TiN x ) deposited by means of DC magnetron sputtering. We are optimizing its deposition by means of DC magnetron reactive sputtering. For this kind of material, the fabrication process is subtractive and consists of EBL patterning through negative tone resist AR-N 7700 and deep reactive ion etching. Critical temperature of TiN x samples was measured in a dedicated cryostat.

  2. Exonuclease-assisted multicolor aptasensor for visual detection of ochratoxin A based on G-quadruplex-hemin DNAzyme-mediated etching of gold nanorod.

    Science.gov (United States)

    Yu, Xinhui; Lin, Yaohui; Wang, Xusheng; Xu, Liangjun; Wang, Zongwen; Fu, FengFu

    2018-04-21

    An exonuclease-assisted multicolor aptasensor was developed for the visual detection of ochratoxin A (OTA). It is based on the etching of gold nanorods (AuNRs) mediated by a G-quadruplex-hemin DNAzyme. A DNA sequence (AG4-OTA) was designed that comprises a hemin aptamer and an OTA aptamer. OTA binds to AG4-OTA to form an antiparallel G-quadruplex, which halts its digestion by exonuclease I (Exo I) from the 3'-end of AG4-OTA. Thus, the retained hemin aptamer can bind to hemin to form a G-quadruplex-hemin DNAzyme. This DNAzyme has peroxidase-like activity that catalyzes the oxidation of 3,3',5,5'-tetramethylbenzidine (TMB) by H 2 O 2 to produce its diimine derivative (TMB 2+ ) in acidic solution. TMB 2+ can etch the AuNRs by oxidizing Au(0) into Au(I). This results in the generation of rainbow-like colors and provides a multicolor platform for the visual detection of OTA. The assay is based on the use of a single isolated aptamer and possesses obvious advantages such as multi-color visual inspection, relatively high sensitivity and accuracy. It can be used to detect as little as 30 nM concentrations of OTA by visual observation and even 10 nM concentrations by spectrophotometry. The method was successfully applied to the determination of OTA in spiked beer where it gave recoveries of 101-108%, with a relative standard deviation (RSD, n = 5) of <5%. Graphical abstract Schematic of an exonuclease-assisted multicolor bioassay based on the G-quadruplex-hemin DNAzyme-mediated etching of gold nanorods (AuNRs). It enables visual detection of ochratoxin A (OTA) with a detection limit of 30 nM.

  3. Fluorocarbon based atomic layer etching of Si{sub 3}N{sub 4} and etching selectivity of SiO{sub 2} over Si{sub 3}N{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Li, Chen [Department of Physics, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States); Metzler, Dominik; Oehrlein, Gottlieb S., E-mail: oehrlein@umd.edu [Department of Materials Science and Engineering, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States); Lai, Chiukin Steven; Hudson, Eric A. [Lam Research Corporation, 4400 Cushing Parkway, Fremont, California 94538 (United States)

    2016-07-15

    Angstrom-level plasma etching precision is required for semiconductor manufacturing of sub-10 nm critical dimension features. Atomic layer etching (ALE), achieved by a series of self-limited cycles, can precisely control etching depths by limiting the amount of chemical reactant available at the surface. Recently, SiO{sub 2} ALE has been achieved by deposition of a thin (several Angstroms) reactive fluorocarbon (FC) layer on the material surface using controlled FC precursor flow and subsequent low energy Ar{sup +} ion bombardment in a cyclic fashion. Low energy ion bombardment is used to remove the FC layer along with a limited amount of SiO{sub 2} from the surface. In the present article, the authors describe controlled etching of Si{sub 3}N{sub 4} and SiO{sub 2} layers of one to several Angstroms using this cyclic ALE approach. Si{sub 3}N{sub 4} etching and etching selectivity of SiO{sub 2} over Si{sub 3}N{sub 4} were studied and evaluated with regard to the dependence on maximum ion energy, etching step length (ESL), FC surface coverage, and precursor selection. Surface chemistries of Si{sub 3}N{sub 4} were investigated by x-ray photoelectron spectroscopy (XPS) after vacuum transfer at each stage of the ALE process. Since Si{sub 3}N{sub 4} has a lower physical sputtering energy threshold than SiO{sub 2}, Si{sub 3}N{sub 4} physical sputtering can take place after removal of chemical etchant at the end of each cycle for relatively high ion energies. Si{sub 3}N{sub 4} to SiO{sub 2} ALE etching selectivity was observed for these FC depleted conditions. By optimization of the ALE process parameters, e.g., low ion energies, short ESLs, and/or high FC film deposition per cycle, highly selective SiO{sub 2} to Si{sub 3}N{sub 4} etching can be achieved for FC accumulation conditions, where FC can be selectively accumulated on Si{sub 3}N{sub 4} surfaces. This highly selective etching is explained by a lower carbon consumption of Si{sub 3}N{sub 4} as compared to Si

  4. Performance improvement inpolymer-based thin film transistor using modified bottom-contact structures with etched SiO{sub 2} layers

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jeong Woo [R and D Center, Samsung Corning Precision Materials Co., Ltd, Asan (Korea, Republic of); You, Young Jun; Shim, Jae Won [Dept. of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul (Korea, Republic of)

    2017-02-15

    Polymer-based thin film transistors (TFTs) with a modified bottom-contact structure and etched SiO{sub 2} layer were developed and investigated. An increase in the field-effect mobility in the developed TFTs compared to TFTs with a normal bottom-contact structure was ascertained. A bottom-contact structure and the photolithographic processing method were used to ensure that the developed TFTs were suitable for commercial applications. Increased mobility of the modified bottom-contact structure was attributed to direct contact of the Au electrode with the active polymer layer.

  5. Etching method employing radiation

    International Nuclear Information System (INIS)

    Chapman, B.N.; Winters, H.F.

    1982-01-01

    This invention provides a method for etching a silicon oxide, carbide, nitride, or oxynitride surface using an electron or ion beam in the presence of a xenon or krypton fluoride. No additional steps are required after exposure to radiation

  6. Research of optical coherence tomography microscope based on CCD detector

    Science.gov (United States)

    Zhang, Hua; Xu, Zhongbao; Zhang, Shuomo

    2008-12-01

    The reference wave phase was modulated with a sinusoidal vibrating mirror attached to a Piezoelectric Transducer (PZT), the integration was performed by a CCD, and the charge storage period of the CCD image sensor was one-quarter period of the sinusoidal phase modulation. With the frequency- synchronous detection technique, four images (four frames of interference pattern) were recorded during one period of the phase modulation. In order to obtain the optimum modulation parameter, the values of amplitude and phase of the sinusoidal phase modulation were determined by considering the measurement error caused by the additive noise contained in the detected values. The PZT oscillation was controlled by a closed loop control system based on PID controller. An ideal discrete digital sine function at 50Hz with adjustable amplitude was used to adjust the vibrating of PZT, and a digital phase shift techniques was used to adjust vibrating phase of PZT so that the phase of the modulation could reach their optimum values. The CCD detector was triggered with software at 200Hz. Based on work above a small coherent signal masked by the preponderant incoherent background with a CCD detector was obtained.

  7. Automatic readout system for superheated emulsion based neutron detector

    International Nuclear Information System (INIS)

    Meena, J.P.; Parihar, A.; Vaijapurkar, S.G.; Mohan, Anand

    2011-01-01

    The paper presents a microcontroller based automatic reader system for neutron measurement using indigenously developed superheated emulsion detector. The system is designed for real time counting of bubbles formed in superheated emulsion detector. A piezoelectric transducer is used for sensing bubble acoustic during the nucleation. The front end of system is mainly consisting of specially designed signal conditioning unit, piezoelectric transducer, an amplifier, a high-pass filter, a differentiator, a comparator and monostable multivibrator. The system is based on PlC 18F6520 microcontroller having large internal SRAM, 10-bit internal ADC, I 2 C interface, UART/USART modules. The paper also describes the design of following microcontroller peripheral units viz temperature monitoring, battery monitoring, LCD display, keypad and a serial communication. The reader system measures and displays neutron dose and dose rate, number of bubble and elapsed time. The developed system can be used for detecting very low neutron leakage in the accelerators, nuclear reactors and nuclear submarines. The important features of system are compact, light weight, cost effective and high neutron sensitivity. The prototype was tested and evaluated by exposing to 241 Am-Be neutron source and results have been reported. (author)

  8. Present status of fast neutron personnel dosimetry system based on CR-39 solid state nuclear track detectors

    International Nuclear Information System (INIS)

    Pal, Rupali; Sathian, Deepa; Jayalakshmi, V.; Bakshi, A.K.; Chougaonkar, M.P.; Mayya, Y.S.; Kumar, Valli; Babu, Rajesh; Kar, S.; Joshi, V.M.

    2011-08-01

    Neutron sources are of different types depending upon the method of production such as nuclear reactors, particle accelerators and laboratory sources. Neutron sources depending upon their energy, flux, size etc. are used for variety of applications in basic and applied sciences, neutron scattering experiments and in industry such as oil well - digging, coal mining and processing, ore processing etc. Personnel working in nuclear installations such as reactors, accelerators, spent fuel processing plants, nuclear fuel cycle operations and those working in various industries such as oil refining, oil well-digging, coal mining and processing, ore processing, etc. need to be monitored for neutron exposures, if any. Neutron monitoring is especially necessary in view of the fact that the radiation weighting factor for neutron is much higher than gamma rays and also it varies with energy. Radiological Physics and Advisory Division is involved in monitoring of personnel working in neutron fields. Around 2100 workers from 70 institutions (DAE and Non-DAE) are monitored on a quarterly basis. Neutron personnel monitoring, carried out in the country is based on Solid State Nuclear Track Detection (SSNTD) technique. In this technique, neutrons interact with hydrogen in CR-39 polymer to produce recoil protons. These protons create damages in the polymer, which are enlarged and appear as tracks when subjected to electrochemical etching (ECE). These tracks are counted in an optical system to evaluate the neutron dose. The neutron dosimetry system based on SSNTD has undergone a significant development, since it was started in 1990. The development includes upgradation of image analysis system for counting tracks, introduction of chemical etching (CE) at elevated temperatures for evaluation of dose equivalents above 10 mSv and use of carbon laser for cutting of CR-39 detectors. The entire dose evaluation process has been standardized, which includes calibration and performance tests

  9. Dosimetry and microdosimetry using LET spectrometer based on the track-etch detector: radiotherapy bremsstrahlung beam, onboard aircraft radiation field

    Czech Academy of Sciences Publication Activity Database

    Jadrníčková, Iva; Spurný, František

    2006-01-01

    Roč. 41, č. 4 (2006), s. 421-429 ISSN 0033-8451 R&D Projects: GA ČR GA202/04/0795; GA ČR(CZ) GD202/05/H031 Institutional research plan: CEZ:AV0Z10480505 Keywords : linear energy transfer * bremsstrahlung beam * onboard aircraft Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders

  10. Device fabrication by plasma etching

    International Nuclear Information System (INIS)

    Mogab, C.J.

    1980-01-01

    Plasma etching as applied to many of the materials encountered in the fabrication of LSI's is complicated by loading effect-the dependence of etch rate on the integrated surface area to be etched. This problem is alleviated by appropriate choice of etchant and etching conditions. Appropriate choice of system parameters, generally most concerned with the inherent lifetime of etchant species, may also result in improvement of etch rate uniformity on a wafer-by-wafer basis

  11. Fabrication and characterization of a nanometer-sized optical fiber electrode based on selective chemical etching for scanning electrochemical/optical microscopy.

    Science.gov (United States)

    Maruyama, Kenichi; Ohkawa, Hiroyuki; Ogawa, Sho; Ueda, Akio; Niwa, Osamu; Suzuki, Koji

    2006-03-15

    We have already reported a method for fabricating ultramicroelectrodes (Suzuki, K. JP Patent, 2004-45394, 2004). This method is based on the selective chemical etching of optical fibers. In this work, we undertake a detailed investigation involving a combination of etched optical fibers with various types of tapered tip (protruding-shape, double- (or pencil-) shape and triple-tapered electrode) and insulation with electrophoretic paint. Our goal is to establish a method for fabricating nanometer-sized optical fiber electrodes with high reproducibility. As a result, we realized pencil-shaped and triple-tapered electrodes that had radii in the nanometer range with high reproducibility. These nanometer-sized electrodes showed well-defined sigmoidal curves and stable diffusion-limited responses with cyclic voltammetry. The pencil-shaped optical fiber, which has a conical tip with a cone angle of 20 degrees , was effective for controlling the electrode radius. The pencil-shaped electrodes had higher reproducibility and smaller electrode radii (r(app) etched optical fiber electrodes. By using a pencil-shaped electrode with a 105-nm radius as a probe, we obtained simultaneous electrochemical and optical images of an implantable interdigitated array electrode. We achieved nanometer-scale resolution with a combination of scanning electrochemical microscopy SECM and optical microscopy. The resolution of the electrochemical and optical images indicated sizes of 300 and 930 nm, respectively. The neurites of living PC12 cells were also successfully imaged on a 1.6-microm scale by using the negative feedback mode of an SECM.

  12. A Highly Sensitive Two-Dimensional Inclinometer Based on Two Etched Chirped-Fiber-Grating Arrays †

    Science.gov (United States)

    Chang, Hung-Ying; Chang, Yu-Chung; Liu, Wen-Fung

    2017-01-01

    We present a novel two-dimensional fiber-optic inclinometer with high sensitivity by crisscrossing two etched chirped fiber Bragg gratings (CFBG) arrays. Each array is composed of two symmetrically-arranged CFBGs. By etching away most of the claddings of the CFBGs to expose the evanescent wave, the reflection spectra are highly sensitive to the surrounding index change. When we immerse only part of the CFBG in liquid, the effective index difference induces a superposition peak in the refection spectrum. By interrogating the peak wavelengths of the CFBGs, we can deduce the tilt angle and direction simultaneously. The inclinometer has a resolution of 0.003° in tilt angle measurement and 0.00187 rad in tilt direction measurement. Due to the unique sensing mechanism, the sensor is temperature insensitive. This sensor can be useful in long term continuous monitoring of inclination or in real-time feedback control of tilt angles, especially in harsh environments with violent temperature variation. PMID:29244770

  13. Directional Etching of Silicon by Silver Nanostructures

    Science.gov (United States)

    Sharma, Pradeep; Wang, Yuh-Lin

    2011-02-01

    We report directional etching of nanostructures (nanochannels and nanotrenches) into the Si(100) substrates in aqueous HF and H2O2 solution by lithographically defined Ag patterns (nanoparticles, nanorods, and nanorings). The Effect of Ag/Si interface oxide on the directional etching has been studied by etching Ag/SiOx/Si samples of known interface oxide thickness. Based on high resolution transmission electron microscopy (HRTEM) imaging and TEM-energy dispersive X-ray (EDX) spectra of the Ag/Si interfaces, we propose that maintenance of the sub-nanometer oxide at the Ag/Si interfaces and Ag-Si interaction are the key factors which regulate the directional etching of Si.

  14. Fluorescence turn-on sensing of trace cadmium ions based on EDTA-etched CdTe@CdS quantum dot.

    Science.gov (United States)

    Wang, Si-Nan; Zhu, Jian; Li, Xin; Li, Jian-Jun; Zhao, Jun-Wu

    2018-05-01

    Cadmium-caused environmental pollution and diseases have always been worldwide problems. Thus it is extremely urgent to establish a cheap, rapid, simple and selective detection method for trace cadmium in drinking water. In this study, a fluorescence "turn-on" method based on ethylene diamine tetraacetic acid (EDTA)-etched CdTe@CdS quantum dots (QDs) was designed to detect Cd 2+ . High resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy (XPS) were utilized for chemical and structural characterization of the as-prepared QDs. Based on chemical etching of EDTA on the surface of CdTe@CdS QDs, specific Cd 2+ recognition sites were produced, and then results in fluorescence quenching. The introduction of Cd 2+ could identify these sites and restore the fluorescence of the EDTA-QDs system. Under the optimum conditions, the nanoprobe shows a linear response range from 0.05 to 9 μM with a very low detection limit of 0.032 μM. In addition, the reported fluorescence probe in this work displays a good selectivity for trace Cd 2+ over other metal ions and an admirable practicability in real water samples. Copyright © 2018 Elsevier B.V. All rights reserved.

  15. Measurement of the variable track-etch rate of hydrogen, carbon and oxygen Ions in CR-39

    International Nuclear Information System (INIS)

    Lengar, I.; Skvarc, J.; Ilic, R.

    2003-01-01

    The ratio of the track-etch rate to the bulk-etch rate for hydrogen, carbon and oxygen ions was studied for the CR-39 detector with addition of dioctylphthalate. The response was reconstructed from etch-pit growth curves obtained by the multi-step etching technique. A theoretical analysis of the correctness of the method due to the 'missing track segment' is assessed and utilisation of the results obtained for the calibration of fast neutron dosimetry is discussed. (author)

  16. Research on Stealthy Headphone Detector Based on Geomagnetic Sensor

    Directory of Open Access Journals (Sweden)

    Liu Ya

    2016-01-01

    Full Text Available A kind of stealth headphone detector based on geomagnetic sensor has been developed to deal with the stealth headphones which are small, extremely stealthy and hard to detect. The U.S. PNI geomagnetic sensor is chosen to obtain magnetic field considering the strong magnetic performance of stealth headphones. The earth’s magnetic field at the geomagnetic sensor is eliminated by difference between two geomagnetic sensors, and then weak variations of magnetic field is detected. STM8S103K2 is chosen as the central controlling chip, which is connected to LED, buzzer and LCD 1602. As shown by the experimental results, the probe is not liable to damage by the magnetic field and the developed device has high sensitivity, low False Positive Rate (FAR and satisfactory reliability.

  17. Noise spectra in balanced optical detectors based on transimpedance amplifiers

    Science.gov (United States)

    Masalov, A. V.; Kuzhamuratov, A.; Lvovsky, A. I.

    2017-11-01

    We present a thorough theoretical analysis and experimental study of the shot and electronic noise spectra of a balanced optical detector based on an operational amplifier connected in a transimpedance scheme. We identify and quantify the primary parameters responsible for the limitations of the circuit, in particular, the bandwidth and shot-to-electronic noise clearance. We find that the shot noise spectrum can be made consistent with the second-order Butterworth filter, while the electronic noise grows linearly with the second power of the frequency. Good agreement between the theory and experiment is observed; however, the capacitances of the operational amplifier input and the photodiodes appear significantly higher than those specified in manufacturers' datasheets. This observation is confirmed by independent tests.

  18. One-dimensional position sensitive detector based on photonic crystals

    International Nuclear Information System (INIS)

    Xi Feng; Qin Lan; Xue Lian; Duan Ying

    2013-01-01

    Position sensitive detectors (PSDs) are an important class of optical sensors which utilizes the lateral photovoltaic effect (LPVE). According to the operation principle of PSD, we demonstrate that LPVE can be enhanced by lengthening the lifetime of photo-generated carriers. A PSD based on photonic crystals (PCs) composed of MgF 2 and InP is proposed and designed. The transmittances of the defect PC and the reflectance of the perfect PC in the PSD are obtained with transfer matrix method. The theoretical research on the designed device shows that LPVE is enhanced by improving the transmittance of the defect PC and the reflectance of the perfect PC to lengthen the lifetime of photo-generated carriers. (authors)

  19. Thermal neutron detectors based on complex oxide crystals

    CERN Document Server

    Ryzhikov, V; Volkov, V; Chernikov, V; Zelenskaya, O

    2002-01-01

    The ways of improvement of spectrometric quality of CWO and GSO crystals have been investigated with the aim of their application in thermal neutron detectors based on radiation capture reactions. The efficiency of the neutron detection by these crystals was measured, and the obtained data were compared with the results for sup 6 LiI(Tl) crystals. It is shown that the use of complex oxide crystals and neutron-absorption filters for spectrometry of thermal and resonance neutrons could be a promising method in combination with computer data processing. Numerical calculations are reported for spectra of gamma-quanta due to radiation capture of the neutrons. To compensate for the gamma-background lines, we used a crystal pair of heavy complex oxides with different sensitivity to neutrons.

  20. Kernel-based noise filtering of neutron detector signals

    International Nuclear Information System (INIS)

    Park, Moon Ghu; Shin, Ho Cheol; Lee, Eun Ki

    2007-01-01

    This paper describes recently developed techniques for effective filtering of neutron detector signal noise. In this paper, three kinds of noise filters are proposed and their performance is demonstrated for the estimation of reactivity. The tested filters are based on the unilateral kernel filter, unilateral kernel filter with adaptive bandwidth and bilateral filter to show their effectiveness in edge preservation. Filtering performance is compared with conventional low-pass and wavelet filters. The bilateral filter shows a remarkable improvement compared with unilateral kernel and wavelet filters. The effectiveness and simplicity of the unilateral kernel filter with adaptive bandwidth is also demonstrated by applying it to the reactivity measurement performed during reactor start-up physics tests

  1. Joint preprocesser-based detector for cooperative networks with limited hardware processing capability

    KAUST Repository

    Abuzaid, Abdulrahman I.

    2015-02-01

    In this letter, a joint detector for cooperative communication networks is proposed when the destination has limited hardware processing capability. The transmitter sends its symbols with the help of L relays. As the destination has limited hardware, only U out of L signals are processed and the energy of the remaining relays is lost. To solve this problem, a joint preprocessing based detector is proposed. This joint preprocessor based detector operate on the principles of minimizing the symbol error rate (SER). For a realistic assessment, pilot symbol aided channel estimation is incorporated for this proposed detector. From our simulations, it can be observed that our proposed detector achieves the same SER performance as that of the maximum likelihood (ML) detector with all participating relays. Additionally, our detector outperforms selection combining (SC), channel shortening (CS) scheme and reduced-rank techniques when using the same U. Our proposed scheme has low computational complexity.

  2. Particle detectors based on semiconducting InP epitaxial layers

    Czech Academy of Sciences Publication Activity Database

    Yatskiv, Roman; Grym, Jan; Žďánský, Karel

    2011-01-01

    Roč. 6, C01072 (2011), C010721-C010725 ISSN 1748-0221 R&D Projects: GA AV ČR KJB200670901; GA MŠk(CZ) OC10021; GA ČR(CZ) GP102/08/P617 Institutional research plan: CEZ:AV0Z20670512 Keywords : Solid state detectors * Gamma detectors * Radiation-hard detectors Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.869, year: 2011

  3. ECE laboratory in the Vinča institute: Its basic characteristics and fundamentals of electrochemic etching on polycarbonate

    Directory of Open Access Journals (Sweden)

    Žunić Zora S.

    2003-01-01

    Full Text Available This paper deals with the introductory aspects of the Electrochemical Etching Laboratory installed at the VINČA Institute in the year 2003. The main purpose of the laboratory is its field application for radon and thoron large-scale survey using passive radon/thoron UFO type detectors. Since the etching techniques together with the laboratory equipment were transferred from the National Institute of Radiological Sciences, Chiba, Japan, it was necessary for both etching conditions to be confirmed and to be checked up^ i. e., bulk etching speeds of chemical etching and electrochemical etching in the VINCA Electrochemical Etching Laboratory itself. Beside this initial step, other concerns were taken into consideration in this preliminary experimental phase such as the following: the measurable energy range of the polycarbonate film, background etch pit density of the film and its standard deviation and reproducibility of the response to alpha particles for different sets of etchings.

  4. Sputtering yields and surface chemical modification of tin-doped indium oxide in hydrocarbon-based plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi, E-mail: hamaguch@ppl.eng.osaka-u.ac.jp [Center for Atomic and Molecular Technologies, Osaka University, Yamadaoka 2-1, Suita 565-0871 (Japan); Fukasawa, Masanaga; Nagahata, Kazunori; Tatsumi, Tetsuya [Device and Material R& D Group, RDS Platform, Sony Corporation, Kanagawa 243-0014 (Japan)

    2015-11-15

    Sputtering yields and surface chemical compositions of tin-doped indium oxide (or indium tin oxide, ITO) by CH{sup +}, CH{sub 3}{sup +}, and inert-gas ion (He{sup +}, Ne{sup +}, and Ar{sup +}) incidence have been obtained experimentally with the use of a mass-selected ion beam system and in-situ x-ray photoelectron spectroscopy. It has been found that etching of ITO is chemically enhanced by energetic incidence of hydrocarbon (CH{sub x}{sup +}) ions. At high incident energy incidence, it appears that carbon of incident ions predominantly reduce indium (In) of ITO and the ITO sputtering yields by CH{sup +} and CH{sub 3}{sup +} ions are found to be essentially equal. At lower incident energy (less than 500 eV or so), however, a hydrogen effect on ITO reduction is more pronounced and the ITO surface is more reduced by CH{sub 3}{sup +} ions than CH{sup +} ions. Although the surface is covered more with metallic In by low-energy incident CH{sub 3}{sup +} ions than CH{sup +} ions and metallic In is in general less resistant against physical sputtering than its oxide, the ITO sputtering yield by incident CH{sub 3}{sup +} ions is found to be lower than that by incident CH{sup +} ions in this energy range. A postulation to account for the relation between the observed sputtering yield and reduction of the ITO surface is also presented. The results presented here offer a better understanding of elementary surface reactions observed in reactive ion etching processes of ITO by hydrocarbon plasmas.

  5. Plasma etching: Yesterday, today, and tomorrow

    Energy Technology Data Exchange (ETDEWEB)

    Donnelly, Vincent M.; Kornblit, Avinoam [Department of Chemical and Biomolecular Engineering, University of Houston, Houston, Texas 77204 (United States)

    2013-09-15

    The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.

  6. Plasma etching: Yesterday, today, and tomorrow

    International Nuclear Information System (INIS)

    Donnelly, Vincent M.; Kornblit, Avinoam

    2013-01-01

    The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices

  7. Graphene-based ultrasonic detector for photoacoustic imaging

    Science.gov (United States)

    Yang, Fan; Song, Wei; Zhang, Chonglei; Fang, Hui; Min, Changjun; Yuan, Xiaocong

    2018-03-01

    Taking advantage of optical absorption imaging contrast, photoacoustic imaging technology is able to map the volumetric distribution of the optical absorption properties within biological tissues. Unfortunately, traditional piezoceramics-based transducers used in most photoacoustic imaging setups have inadequate frequency response, resulting in both poor depth resolution and inaccurate quantification of the optical absorption information. Instead of the piezoelectric ultrasonic transducer, we develop a graphene-based optical sensor for detecting photoacoustic pressure. The refractive index in the coupling medium is modulated due to photoacoustic pressure perturbation, which creates the variation of the polarization-sensitive optical absorption property of the graphene. As a result, the photoacoustic detection is realized through recording the reflectance intensity difference of polarization light. The graphene-based detector process an estimated noise-equivalentpressure (NEP) sensitivity of 550 Pa over 20-MHz bandwidth with a nearby linear pressure response from 11.0 kPa to 53.0 kPa. Further, a graphene-based photoacoustic microscopy is built, and non-invasively reveals the microvascular anatomy in mouse ears label-freely.

  8. HgI2 detector fabrication

    International Nuclear Information System (INIS)

    Gonzalez, M.; Perez, J. M.

    1996-01-01

    The aim of the present work is to describe the steps followed to fabricate an ionizing radiation detector based on synthetic mercuric iodide monocrystal layers. Firstly, the crystalline orientation method has been describe, which is needed before the layer cutting perpendicularly to the (001) crystallographic. It is also defined the proceeding to crystal face finishing by a mechanical polishing and subsequent chemical etching. then, the metal electrode deposition and the view connection has been explained. Finally, the technique followed to encapsulate the detector with a polymeric thin film deposition has been described. (Author) 10 refs

  9. HgI2 detector fabrication

    International Nuclear Information System (INIS)

    Gonzalez, M.; Perez, J.M.

    1996-01-01

    The aim of the present work is to describe the steps followed to fabricate an ionizing radiation detector based on synthetic mercuric iodide monocrystal layers. Firstly, the crystalline orientation method has been describe, which is needed before the layer cutting perpendicullarly to the (001) crystallographyc. It is also defined the proceeding to crystal face finishing by a mechanical polishing and subsequent chemical etching. Then, the metal electrode deposition and the wire connection has been explained. Finally, the technique followed to encapsulate the detector with a polimeric thin film deposition has been described

  10. Polarimetric Edge Detector Based on the Complex Wishart Distribution

    DEFF Research Database (Denmark)

    Skriver, Henning; Schou, Jesper; Nielsen, Allan Aasbjerg

    2001-01-01

    polarimetric edge detector provides a constant false alarm rate and it utilizes the full polarimetric information. The edge detector has been applied to polarimetric SAR data from the Danish dual-frequency, airborne polarimetric SAR, EMISAR. The results show clearly an improved edge detection performance...

  11. Status of COMPASS RICH-1 Upgrade with MPGD-based Photon Detectors

    Directory of Open Access Journals (Sweden)

    Alexeev M.

    2018-01-01

    Full Text Available A Set of new MPGD-based Photon Detectors is being built for the upgrade of COMPASS RICH-1. The detectors cover a total active area of 1.4 m2 and are based on a hybrid architecture consisting of two THGEM layers and a Micromegas. A CsI film on one THGEM acts as a reflective photocathode. The characteristics of the detector, the production of the components and their validation tests are described in detail.

  12. Design of FPGA-based radiation tolerant quench detectors for LHC

    Science.gov (United States)

    Steckert, J.; Skoczen, A.

    2017-04-01

    The Large Hadron Collider (LHC) comprises many superconducting circuits. Most elements of these circuits require active protection. The functionality of the quench detectors was initially implemented as microcontroller based equipment. After the initial stage of the LHC operation with beams the introduction of a new type of quench detector began. This article presents briefly the main ideas and architectures applied to the design and the validation of FPGA-based quench detectors.

  13. Design of FPGA-based radiation tolerant quench detectors for LHC

    International Nuclear Information System (INIS)

    Steckert, J.; Skoczen, A.

    2017-01-01

    The Large Hadron Collider (LHC) comprises many superconducting circuits. Most elements of these circuits require active protection. The functionality of the quench detectors was initially implemented as microcontroller based equipment. After the initial stage of the LHC operation with beams the introduction of a new type of quench detector began. This article presents briefly the main ideas and architectures applied to the design and the validation of FPGA-based quench detectors.

  14. Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors

    Science.gov (United States)

    2016-05-16

    AFRL-AFOSR-JP-TR-2016-0054 Silicon based mid infrared SiGeSn heterostrcture emitters and detectors Greg Sun UNIVERSITY OF MASSACHUSETTS Final Report... Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors ” February 10, 2016 Principal Investigator: Greg Sun Engineering...diodes are incompatible with the CMOS process and therefore cannot be easily integrated with Si electronics . The GeSn mid IR detectors developed in

  15. Chemical etching studies of a Brazilian polycarbonate to fast neutron detection

    International Nuclear Information System (INIS)

    Souto, E.B.; Campos, L.L.

    2006-01-01

    The Dosimetric Materials Laboratory (LMD) of the Radiation Metrology Center (CMR) is developing a personal dosimeter for fast neutrons using the technique of solid state nuclear track detectors (SSNTD). This technique is based on the recorded damage (tracks) in dielectric materials due to the impact of charged particles. The tracks are revealed and amplified for visualization in optic microscope through a technique known as chemical etching. The LMD is investigating a Brazilian commercial polycarbonate as a new passive fast neutron's detector in substitution to the traditional materials, as the cellulose nitrate LR-115 and the polycarbonates Makrofol and CR-39. The variation of the etching parameters (chemical solution, time and temperature) alters the response of the material; the best revelation conditions provide the best relationship among the amount of revealed tracks, their clearness and the time spent for this. The polycarbonate studied is a resin of same chemical monomer of Makrofol (C,6H,403). Samples of 3 x 1 cm 2 of the polycarbonate were irradiated with 5 mSv of fast neutrons ( 241 Am-Be) and revealed with the chemical solution PEW-40 (15% KOH, 45% H 2 O, 40% C 2 H 5 OH), commonly used for Makrofol. The studied etching parameters were time and temperature. Groups of four samples were revealed at temperatures of 50, 65, 75, 90 and 100 C with etching times varying from one to six hours. The used track's counting procedure was that referred in the literature. The best response to fast neutrons was obtained at 75 C; in spite of their similar answers, smaller temperatures join larger uncertainties in the track's counting and poorer clearness. At this temperature, the number of revealed tracks increases with the etching time approximately until a plateau at three hours. For etching times higher than four hours the polycarbonate presents overlap of tracks. If the temperature is adjusted to 75 C, the etching time should be in the plateau to avoid that small

  16. Chemical etching studies of a Brazilian polycarbonate to fast neutron detection

    Energy Technology Data Exchange (ETDEWEB)

    Souto, E.B.; Campos, L.L. [Instituto de Pesquisas Energeticas e Nucleares, IPEN- CNEN/SP Radiation Metrology Center (CMR) Av. Prof. Lineu Prestes, 2242 CEP: 05508-000 Sao Paulo - SP (Brazil)]. e-mail: ebsouto@ipen.br

    2006-07-01

    The Dosimetric Materials Laboratory (LMD) of the Radiation Metrology Center (CMR) is developing a personal dosimeter for fast neutrons using the technique of solid state nuclear track detectors (SSNTD). This technique is based on the recorded damage (tracks) in dielectric materials due to the impact of charged particles. The tracks are revealed and amplified for visualization in optic microscope through a technique known as chemical etching. The LMD is investigating a Brazilian commercial polycarbonate as a new passive fast neutron's detector in substitution to the traditional materials, as the cellulose nitrate LR-115 and the polycarbonates Makrofol and CR-39. The variation of the etching parameters (chemical solution, time and temperature) alters the response of the material; the best revelation conditions provide the best relationship among the amount of revealed tracks, their clearness and the time spent for this. The polycarbonate studied is a resin of same chemical monomer of Makrofol (C,6H,403). Samples of 3 x 1 cm{sup 2} of the polycarbonate were irradiated with 5 mSv of fast neutrons ({sup 241}Am-Be) and revealed with the chemical solution PEW-40 (15% KOH, 45% H{sub 2}O, 40% C{sub 2}H{sub 5}OH), commonly used for Makrofol. The studied etching parameters were time and temperature. Groups of four samples were revealed at temperatures of 50, 65, 75, 90 and 100 C with etching times varying from one to six hours. The used track's counting procedure was that referred in the literature. The best response to fast neutrons was obtained at 75 C; in spite of their similar answers, smaller temperatures join larger uncertainties in the track's counting and poorer clearness. At this temperature, the number of revealed tracks increases with the etching time approximately until a plateau at three hours. For etching times higher than four hours the polycarbonate presents overlap of tracks. If the temperature is adjusted to 75 C, the etching time should be in

  17. Characterization of saturation of CR-39 detector at high alpha-particle fluence

    Directory of Open Access Journals (Sweden)

    M. El Ghazaly

    2018-04-01

    Full Text Available The occurrence of saturation in the CR-39 detector reduces and limits its detection dynamic range; nevertheless, this range could be extended using spectroscopic techniques and by measuring the net bulk rate of the saturated CR-39 detector surface. CR-39 detectors were irradiated by 1.5 MeV high alpha-particle fluence varying from 0.06 × 108 to 7.36 × 108 alphas/cm2 from Am-241 source; thereafter, they were etched in a 6.25N NaOH solution at a temperature of 70°C for different durations. Net bulk etch rate measurement of the 1.5 MeV alpha-irradiated CR-39 detector surface revealed that rate increases with increasing etching time and reaches its maximum value at the end of the alpha-particle range. It is also correlated with the alpha-particle fluence. The measurements of UV–Visible (UV–Vis absorbance at 500 and 600 nm reveal that the absorbance is linearly correlated with the fluence of alpha particles at the etching times of 2 and 4 hour. For extended etching times of 6, 10, and 14.5 hour, the absorbance is saturated for fluence values of 4.05 × 108, 5.30 × 108, and 7.36 × 108 alphas/cm2. These new methods pave the way to extend the dynamic range of polymer-based solid state nuclear track detectors (SSNTDs in measurement of high fluence of heavy ions as well as in radiation dosimetry. Keywords: Alpha Particle, Bulk Etch Rate, CR-39 Detector, Saturated Regime, UV–Vis Spectroscopy

  18. Influence of copper foil polycrystalline structure on graphene anisotropic etching

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Kamal P. [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Mahyavanshi, Rakesh D. [Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)

    2017-01-30

    Graphical abstract: Hexagonal hole formation with anisotropic etching independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. - Highlights: • Reveal the influence of copper polycrystalline structure on anisotropic etching of graphene. • Hexagonal hole formation with etching is observed to be independent of stripes and wrinkles in graphene. • Variation in etched pattern of graphene depending on the base Cu grain is confirmed. • This finding will help to understand the nature of microscopic etched pattern in graphene. - Abstract: Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal

  19. Influence of copper foil polycrystalline structure on graphene anisotropic etching

    International Nuclear Information System (INIS)

    Sharma, Kamal P.; Mahyavanshi, Rakesh D.; Kalita, Golap; Tanemura, Masaki

    2017-01-01

    Graphical abstract: Hexagonal hole formation with anisotropic etching independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. - Highlights: • Reveal the influence of copper polycrystalline structure on anisotropic etching of graphene. • Hexagonal hole formation with etching is observed to be independent of stripes and wrinkles in graphene. • Variation in etched pattern of graphene depending on the base Cu grain is confirmed. • This finding will help to understand the nature of microscopic etched pattern in graphene. - Abstract: Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal

  20. Study of a nTHGEM-based thermal neutron detector

    Science.gov (United States)

    Li, Ke; Zhou, Jian-Rong; Wang, Xiao-Dong; Xiong, Tao; Zhang, Ying; Xie, Yu-Guang; Zhou, Liang; Xu, Hong; Yang, Gui-An; Wang, Yan-Feng; Wang, Yan; Wu, Jin-Jie; Sun, Zhi-Jia; Hu, Bi-Tao

    2016-07-01

    With new generation neutron sources, traditional neutron detectors cannot satisfy the demands of the applications, especially under high flux. Furthermore, facing the global crisis in 3He gas supply, research on new types of neutron detector as an alternative to 3He is a research hotspot in the field of particle detection. GEM (Gaseous Electron Multiplier) neutron detectors have high counting rate, good spatial and time resolution, and could be one future direction of the development of neutron detectors. In this paper, the physical process of neutron detection is simulated with Geant4 code, studying the relations between thermal conversion efficiency, boron thickness and number of boron layers. Due to the special characteristics of neutron detection, we have developed a novel type of special ceramic nTHGEM (neutron THick GEM) for neutron detection. The performance of the nTHGEM working in different Ar/CO2 mixtures is presented, including measurements of the gain and the count rate plateau using a copper target X-ray source. A detector with a single nTHGEM has been tested for 2-D imaging using a 252Cf neutron source. The key parameters of the performance of the nTHGEM detector have been obtained, providing necessary experimental data as a reference for further research on this detector. Supported by National Natural Science Foundation of China (11127508, 11175199, 11205253, 11405191), Key Laboratory of Neutron Physics, CAEP (2013DB06, 2013BB04) and CAS (YZ201512)

  1. Highly selective and sensitive paper-based colorimetric sensor using thiosulfate catalytic etching of silver nanoplates for trace determination of copper ions.

    Science.gov (United States)

    Chaiyo, Sudkate; Siangproh, Weena; Apilux, Amara; Chailapakul, Orawon

    2015-03-25

    A novel, highly selective and sensitive paper-based colorimetric sensor for trace determination of copper (Cu(2+)) ions was developed. The measurement is based on the catalytic etching of silver nanoplates (AgNPls) by thiosulfate (S2O3(2-)). Upon the addition of Cu(2+) to the ammonium buffer at pH 11, the absorption peak intensity of AuNPls/S2O3(2-) at 522 nm decreased and the pinkish violet AuNPls became clear in color as visible to the naked eye. This assay provides highly sensitive and selective detection of Cu(2+) over other metal ions (K(+), Cr(3+), Cd(2+), Zn(2+), As(3+), Mn(2+), Co(2+), Pb(2+), Al(3+), Ni(2+), Fe(3+), Mg(2+), Hg(2+) and Bi(3+)). A paper-based colorimetric sensor was then developed for the simple and rapid determination of Cu(2+) using the catalytic etching of AgNPls. Under optimized conditions, the modified AgNPls coated at the test zone of the devices immediately changes in color in the presence of Cu(2+). The limit of detection (LOD) was found to be 1.0 ng mL(-1) by visual detection. For semi-quantitative measurement with image processing, the method detected Cu(2+) in the range of 0.5-200 ng mL(-1)(R(2)=0.9974) with an LOD of 0.3 ng mL(-1). The proposed method was successfully applied to detect Cu(2+) in the wide range of real samples including water, food, and blood. The results were in good agreement according to a paired t-test with results from inductively coupled plasma-optical emission spectrometry (ICP-OES). Copyright © 2015. Published by Elsevier B.V.

  2. Dry etching technology for semiconductors

    CERN Document Server

    Nojiri, Kazuo

    2015-01-01

    This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

  3. A beta ray spectrometer based on a two-, or three-element silicon detector coincidence telescope

    International Nuclear Information System (INIS)

    Horowitz, Y.S.; Weizman, Y.; Hirning, C.R.

    1995-01-01

    The operation of a beta ray energy spectrometer based on a two-or three-element silicon detector telescope is described. The front detector (A) is a thin, totally depleted, silicon surface barrier detector either 40 μm, 72 μm or 98 μm thick. The back detector (C) is a Li compensated silicon detector, 5000 μm thick. An additional thin detector can be inserted between these two detectors when additional photon rejection capability is required in intense photon fields. The capability of the spectrometer to reject photons is based on the fact that incident photons will have a small probability of simultaneously losing detectable energy in two detectors and an even smaller probability of losing detectable energy in all three detectors. Electrons, however, above a low energy threshold, will always record simultaneous, events in all three detectors. The spectrometer is capable of measuring electron energies from a lower energy coincidence threshold of 70 keV with 60% efficiency increasing to 100% efficiency in the energy region between 150 keV and 2.5 MeV. (Author)

  4. Wafer-Scale Hierarchical Nanopillar Arrays Based on Au Masks and Reactive Ion Etching for Effective 3D SERS Substrate

    Directory of Open Access Journals (Sweden)

    Dandan Men

    2018-02-01

    Full Text Available Two-dimensional (2D periodic micro/nanostructured arrays as SERS substrates have attracted intense attention due to their excellent uniformity and good stability. In this work, periodic hierarchical SiO2 nanopillar arrays decorated with Ag nanoparticles (NPs with clean surface were prepared on a wafer-scale using monolayer Au NP arrays as masks, followed by reactive ion etching (RIE, depositing Ag layer and annealing. For the prepared SiO2 nanopillar arrays decorated with Ag NPs, the size of Ag NPs was tuned from ca. 24 to 126 nanometers by controlling the deposition thickness of Ag film. Importantly, the SiO2 nanopillar arrays decorated with Ag NPs could be used as highly sensitive SERS substrate for the detection of 4-aminothiophenol (4-ATP and rhodamine 6G (R6G due to the high loading of Ag NPs and a very uniform morphology. With a deposition thickness of Ag layer of 30 nm, the SiO2 nanopillar arrays decorated with Ag NPs exhibited the best sensitive SERS activity. The excellent SERS performance of this substrate is mainly attributed to high-density “hotspots” derived from nanogaps between Ag NPs. Furthermore, this strategy might be extended to synthesize other nanostructured arrays with a large area, which are difficult to be prepared only via conventional wet-chemical or physical methods.

  5. Wafer-Scale Hierarchical Nanopillar Arrays Based on Au Masks and Reactive Ion Etching for Effective 3D SERS Substrate.

    Science.gov (United States)

    Men, Dandan; Wu, Yingyi; Wang, Chu; Xiang, Junhuai; Yang, Ganlan; Wan, Changjun; Zhang, Honghua

    2018-02-04

    Two-dimensional (2D) periodic micro/nanostructured arrays as SERS substrates have attracted intense attention due to their excellent uniformity and good stability. In this work, periodic hierarchical SiO₂ nanopillar arrays decorated with Ag nanoparticles (NPs) with clean surface were prepared on a wafer-scale using monolayer Au NP arrays as masks, followed by reactive ion etching (RIE), depositing Ag layer and annealing. For the prepared SiO₂ nanopillar arrays decorated with Ag NPs, the size of Ag NPs was tuned from ca. 24 to 126 nanometers by controlling the deposition thickness of Ag film. Importantly, the SiO₂ nanopillar arrays decorated with Ag NPs could be used as highly sensitive SERS substrate for the detection of 4-aminothiophenol (4-ATP) and rhodamine 6G (R6G) due to the high loading of Ag NPs and a very uniform morphology. With a deposition thickness of Ag layer of 30 nm, the SiO₂ nanopillar arrays decorated with Ag NPs exhibited the best sensitive SERS activity. The excellent SERS performance of this substrate is mainly attributed to high-density "hotspots" derived from nanogaps between Ag NPs. Furthermore, this strategy might be extended to synthesize other nanostructured arrays with a large area, which are difficult to be prepared only via conventional wet-chemical or physical methods.

  6. Influence of asymmetric etching on ion track shapes in polycarbonate

    International Nuclear Information System (INIS)

    Clochard, M.-C.; Wade, T.L.; Wegrowe, J.-E.; Balanzat, E.

    2007-01-01

    By combining low-energy ion irradiation with asymmetric etching, conical nanopores of controlled geometry can be etched in polycarbonate (PC). Cone bases vary from 0.5 to 1 μm. Top diameters down to 17 nm are reached. When etching from one side, the pH on the other side (bathed in neutral or acidic buffer) was monitored. Etching temperature ranged from 65 deg. C to 80 deg. C. Pore shape characterization was achieved by electro replication combined with SEM observation. The tip shape depended on whether an acidic buffer was used or not on the stopped side

  7. Properties of GaAs:Cr-based Timepix detectors

    Science.gov (United States)

    Smolyanskiy, P.; Bergmann, B.; Chelkov, G.; Kotov, S.; Kruchonak, U.; Kozhevnikov, D.; Mora Sierra, Y.; Stekl, I.; Zhemchugov, A.

    2018-02-01

    The hybrid pixel detector technology brought to the X-ray imaging a low noise level at a high spatial resolution, thanks to the single photon counting. However, silicon as the most widespread detector material is marginally sensitive to photons with energies above 30 keV. Therefore, the high-Z alternatives to silicon such as gallium arsenide and cadmium telluride are increasingly attracting attention of the community for the development of X-ray imaging systems. The results of our investigations of the Timepix detectors bump bonded to sensors made of gallium arsenide compensated by chromium (GaAs:Cr) are presented in this work. The following properties are most important from the practical point of view: the IV characteristics, the charge transport characteristics, photon detection efficiency, operational stability, homogeneity, temperature dependence, as well as energy and spatial resolution are considered. The applicability of these detectors for spectroscopic X-ray imaging is discussed.

  8. Calorimeter based detectors for high energy hadron colliders

    International Nuclear Information System (INIS)

    1993-01-01

    The work was directed in two complementary directions, the D0 experiment at Fermilab, and the GEM detector for the SSC. Efforts have been towards the data taking and analysis with the newly commissioned D0 detector at Fermilab in the bar pp Collider run that started in May 1992 and ended on June 1, 1993. We involved running and calibration of the calorimeter and tracking chambers, the second level trigger development, and various parts of the data analysis, as well as studies for the D0 upgrade planned in the second half of this decade. Another major accomplishment was the ''delivery'' of the Technical Design Report for the GEM SSC detector. Efforts to the overall detector and magnet design, design of the facilities, installation studies, muon system coordination, muon chamber design and tests, muon system simulation studies, and physics simulation studies. In this document we describe these activities separately

  9. BJT detector with FPGA-based read-out for alpha particle monitoring

    International Nuclear Information System (INIS)

    Tyzhnevyi, V; Dalla Betta, G-F; Rovati, L; Verzellesi, G; Zorzi, N

    2011-01-01

    In this work we introduce a new prototype of readout electronics (ALPHADET), which was designed for an α-particle detection system based on a bipolar junction transistor (BJT) detector. The system uses an FPGA, which provides many advantages at the stage of prototyping and testing the detector. The main design and electrical features of the board are discussed in this paper, along with selected results from the characterization of ALPHADET coupled to BJT detectors.

  10. BJT detector with FPGA-based read-out for alpha particle monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Tyzhnevyi, V; Dalla Betta, G-F [Universita di Trento, via Sommarive, 14, 38123 Trento (Italy); Rovati, L [Universita di Modena e Reggio Emilia, via Vignolese 905, 41125 Modena (Italy); Verzellesi, G [Universita di Modena e Reggio Emilia, via Amendola 2, Pad. Morselli, 42100 Reggio Emilia (Italy); Zorzi, N, E-mail: tyzhnevyi@disi.unitn.it [Fondazione Bruno Kessler, via Sommarive, 18, 38123 Trento (Italy)

    2011-01-15

    In this work we introduce a new prototype of readout electronics (ALPHADET), which was designed for an {alpha}-particle detection system based on a bipolar junction transistor (BJT) detector. The system uses an FPGA, which provides many advantages at the stage of prototyping and testing the detector. The main design and electrical features of the board are discussed in this paper, along with selected results from the characterization of ALPHADET coupled to BJT detectors.

  11. Gas microstrip detectors based on flexible printed circuit

    International Nuclear Information System (INIS)

    Salomon, M.; Crowe, K.; Faszer, W.; Lindsay, P.; Curran Maier, J.M.

    1995-09-01

    Microstrip Gas Detectors (MSGC's) were introduced some years ago as position sensitive detectors capable of operating at very high rates. The authors have studied the properties of a new type of Gas Microstrip Counter built using flexible printed circuit technology. They describe the manufacturing procedures, the assembly of the device, as well as its operation under a variety of conditions, gases and types of radiation. They also describe two new passivation materials, tantalum and niobium, which produce effective surfaces

  12. CdTe detector based PIXE mapping of geological samples

    Energy Technology Data Exchange (ETDEWEB)

    Chaves, P.C., E-mail: cchaves@ctn.ist.utl.pt [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal); Taborda, A. [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal); Oliveira, D.P.S. de [Laboratório Nacional de Energia e Geologia (LNEG), Apartado 7586, 2611-901 Alfragide (Portugal); Reis, M.A. [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal)

    2014-01-01

    A sample collected from a borehole drilled approximately 10 km ESE of Bragança, Trás-os-Montes, was analysed by standard and high energy PIXE at both CTN (previous ITN) PIXE setups. The sample is a fine-grained metapyroxenite grading to coarse-grained in the base with disseminated sulphides and fine veinlets of pyrrhotite and pyrite. Matrix composition was obtained at the standard PIXE setup using a 1.25 MeV H{sup +} beam at three different spots. Medium and high Z elemental concentrations were then determined using the DT2fit and DT2simul codes (Reis et al., 2008, 2013 [1,2]), on the spectra obtained in the High Resolution and High Energy (HRHE)-PIXE setup (Chaves et al., 2013 [3]) by irradiation of the sample with a 3.8 MeV proton beam provided by the CTN 3 MV Tandetron accelerator. In this paper we present results, discuss detection limits of the method and the added value of the use of the CdTe detector in this context.

  13. Gamma radiation damage in pixelated detector based on carbon nanotubes

    International Nuclear Information System (INIS)

    Leyva, A.; Pinnera, I.; Leyva, D.; Abreu, Y.; Cruz, C. M.

    2013-01-01

    The aim of this paper is to evaluate the possible gamma radiation damage in high pixelated based on multi-walled carbon nanotubes detectors, grown on two different substrata, when it is operating in aggressive radiational environments. The radiation damage in displacements per atom (dpa) terms were calculated using the MCCM algorithm, which takes into account the McKinley-Feshbach approach with the Kinchin-Pease approximation for the damage function. Was observed that with increasing of the gamma energy the displacement total number grows monotonically reaching values of 0.39 displacements for a 10 MeV incident photon. The profiles of point defects distributions inside the carbon nanotube pixel linearly rise with depth, increasing its slope with photon energy. In the 0.1 MeV - 10 MeV studied energy interval the electron contribution to the total displacement number become higher than the positron ones, reaching this last one a maximum value of 12% for the 10 MeV incident photons. Differences between the calculation results for the two used different substrata were not observed. (Author)

  14. Injection quality measurements with diamond based particle detectors

    CERN Document Server

    Stein, Oliver; CERN. Geneva. ATS Department

    2016-01-01

    During the re-commissioning phase of the LHC after the long shutdown 1 very high beam losses were observed at the TDI during beam injection. The losses reached up to 90% of the dump threshold. To decrease the through beam losses induced stress on the accelerator components these loss levels need to be reduced. Measurements with diamond based particle detectors (dBLMs), which have nano-second time resolution, revealed that the majority of these losses come from recaptured SPS beam surrounding the nominal bunch train. In this MD the injection loss patterns and loss intensities were investigated in greater detail. Performed calibration shots on the TDI (internal beam absorber for injection) gave a conversion factor from impacting particles intensities to signal in the dBLMs (0.1Vs/109 protons). Using the SPS tune kicker for cleaning the recaptured beam in the SPS and changing the LHC injection kicker settings resulted in a reduction of the injection losses. For 144 bunch injections the loss levels were decreased...

  15. Study of relevant parameters of GEM-based detectors

    CERN Document Server

    Croci, Gabriele; Sauli, Fabio; Ragazzi, S

    2007-01-01

    The Gas Electron Multiplier consist of a thin Kapton insulating (50 $\\mu$m) foil copper-clad on both sides and perforated by a high density, regular matrix of holes (around 100 per square millimeter). Typically the distance between holes (pitch) is 140 $\\mu$m and diameters of about 70 $\\mu$m. The mesh is realised by conventional photolitographic methods as used for the fabrication of multi-layer board. Upon application of a potential difference between the GEM electrodes, a high dipole field develops in the holes focusing the field lines between the drift electrode and the readout element. Electron drift along the channel and the charge is amplified by a factor that depends on the field density and the length of the channel. Owing to their excellent position resolution and rate capability GEM-based detector are very suitable to be used in different applications: from the high energy physics to the medical field. The GEM temporal and rate gain stability was studied and it was discovered that the gain variation...

  16. Airplane Ice Detector Based on a Microwave Transmission Line

    Science.gov (United States)

    Ngo, Phong; Arndt, G. Dickey; Carl, James R.

    2004-01-01

    An electronic instrument that could detect the potentially dangerous buildup of ice on an airplane wing is undergoing development. The instrument is based on a microwave transmission line configured as a capacitance probe: at selected spots, the transmission-line conductors are partly exposed to allow any ice and/or liquid water present at those spots to act as predominantly capacitive electrical loads on the transmission line. These loads change the input impedance of the transmission line, as measured at a suitable excitation frequency. Thus, it should be possible to infer the presence of ice and/or liquid water from measurements of the input impedance and/or electrical parameters related to the input impedance. The sensory transmission line is of the microstrip type and thus thin enough to be placed on an airplane wing without unduly disturbing airflow in flight. The sensory spots are small areas from which the upper layer of the microstrip has been removed to allow any liquid water or ice on the surface to reach the transmission line. The sensory spots are spaced at nominal open-circuit points, which are at intervals of a half wavelength (in the transmission line, not in air) at the excitation frequency. The excitation frequency used in the experiments has been 1 GHz, for which a half wavelength in the transmission line is .4 in. (.10 cm). The figure depicts a laboratory prototype of the instrument. The impedance-related quantities chosen for use in this version of the instrument are the magnitude and phase of the scattering parameter S11 as manifested in the in-phase (I ) and quadrature (Q) outputs of the phase detector. By careful layout of the transmission line (including the half-wavelength sensor spacing), one can ensure that the amplitude and phase of the input to the phase detector keep shifting in the same direction as ice forms on one or more of the sensor areas. Although only one transmission-line sensor strip is used in the laboratory version, in a

  17. Detector location selection based on VIP analysis in near-infrared detection of dural hematoma

    Directory of Open Access Journals (Sweden)

    Qiuming Sun

    2018-03-01

    Full Text Available Detection of dural hematoma based on multi-channel near-infrared differential absorbance has the advantages of rapid and non-invasive detection. The location and number of detectors around the light source are critical for reducing the pathological characteristics of the prediction model on dural hematoma degree. Therefore, rational selection of detector numbers and their distances from the light source is very important. In this paper, a detector position screening method based on Variable Importance in the Projection (VIP analysis is proposed. A preliminary modeling based on Partial Least Squares method (PLS for the prediction of dural position μa was established using light absorbance information from 30 detectors located 2.0–5.0 cm from the light source with a 0.1 cm interval. The mean relative error (MRE of the dural position μa prediction model was 4.08%. After VIP analysis, the number of detectors was reduced from 30 to 4 and the MRE of the dural position μa prediction was reduced from 4.08% to 2.06% after the reduction in detector numbers. The prediction model after VIP detector screening still showed good prediction of the epidural position μa. This study provided a new approach and important reference on the selection of detector location in near-infrared dural hematoma detection. Keywords: Detector location screening, Epidural hematoma detection, Variable importance in the projection

  18. Study of correlation between the structural defects and inhomogeneities of CDTE based radiation detectors used for medical imaging

    International Nuclear Information System (INIS)

    Buis, Camille

    2013-01-01

    In the present Ph.D. thesis, we investigate microstructural defects in a chlorine-doped cadmium telluride crystal (CdTe:Cl), to understand the relationship between defects and performance of CdTe-based radiation detectors. Characterization tools, such as diffraction topography and chemical etching, are used for bulk and surface investigations of the distribution of dislocations. Dislocations are arranged into walls. Most of them appear to cross the whole thickness of the sample. Very good correlation is observed between areas with variations of dark-current and photo-current, and positions of the dislocation walls revealed at the surface of the sample. Then spectroscopic analysis of these defects was performed at low temperatures. It highlighted that dislocation walls induce non-radiative recombination, but it didn't show any Y luminescence usually attributed to dislocations in the literature. Ion Beam Induced Current (IBIC) measurements were used to evaluate the influence of dislocation walls on charge carrier transport properties. This experiment shows that they reduce the mobility-lifetime product of the charge carriers. A very clear correlation was, in fact, established between the distribution of the dislocation network and the linear defects revealed by their lower CIE on the device. (author) [fr

  19. Bulk etch rate of LR-115 cellulose nitrate film

    International Nuclear Information System (INIS)

    Harris, M.J.; Schlenker, R.A.

    1977-01-01

    Bulk etch rate (V/sub b/) of Kodak LR-115 cellulose nitrate film has been studied, and values for the parameter are presented. An interesting variability of V/sub b/ has been found which has implications for microdosimetry using this type of integrating nuclear track detector. Short-term and longer-term thickness changes have been observed which may increase the uncertainty in estimations of dose using this type of detector

  20. HgI{sub 2} detector fabrication; Construccion de detectores de HgI{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez, M.; Perez, J. M.

    1996-07-01

    The aim of the present work is to describe the steps followed to fabricate an ionizing radiation detector based on synthetic mercuric iodide monocrystal layers. Firstly, the crystalline orientation method has been describe, which is needed before the layer cutting perpendicularly to the (001) crystallographic. It is also defined the proceeding to crystal face finishing by a mechanical polishing and subsequent chemical etching. then, the metal electrode deposition and the view connection has been explained. Finally, the technique followed to encapsulate the detector with a polymeric thin film deposition has been described. (Author) 10 refs.

  1. Electron Beam Induced Radiation Damage of the Semiconductor Radiation Detector based on Silicon

    International Nuclear Information System (INIS)

    Kim, Han Soo; Kim, Yong Kyun; Park, Se Hwan; Haa, Jang Ho; Kang, Sang Mook; Chung, Chong Eun; Cho, Seung Yeon; Park, Ji Hyun; Yoon, Tae Hyung

    2005-01-01

    A Silicon Surface Barrier (SSB) semiconductor detector which is generally used to detect a charged particle such as an alpha particle was developed. The performance of the developed SSB semiconductor detector was measured with an I-V curve and an alpha spectrum. The response for an alpha particle was measured by Pu-238 sources. A SSB semiconductor detector was irradiated firstly at 30sec, at 30μA and secondly 40sec, 40μA with a 2MeV pulsed electron beam generator in KAERI. And the electron beam induced radiation damage of a homemade SSB detector and the commercially available PIN photodiode were investigated. An annealing effect of the damaged SSB and PIN diode detector were also investigated using a Rapid Thermal Annealing (RTA). This data may assist in designing the silicon based semiconductor radiation detector when it is operated in a high radiation field such as space or a nuclear power plant

  2. Defective pixel map creation based on wavelet analysis in digital radiography detectors

    International Nuclear Information System (INIS)

    Park, Chun Joo; Lee, Hyoung Koo; Song, William Y.; Achterkirchen, Thorsten Graeve; Kim, Ho Kyung

    2011-01-01

    The application of digital radiography detectors has attracted increasing attention in both medicine and industry. Since the imaging detectors are fabricated by semiconductor manufacturing process over large areas, defective pixels in the detectors are unavoidable. Moreover, the radiation damage due to the routine use of the detectors progressively increases the density of defective pixels. In this study, we present a method of identifying defective pixels in digital radiography detectors based on wavelet analysis. Artifacts generated due to wavelet transformations have been prevented by an additional local threshold method. The proposed method was applied to a sample digital radiography and the result was promising. The proposed method uses a single pair of dark and white images and does not require them to be corrected in gain-and-offset properties. This method will be helpful for the reliable use of digital radiography detectors through the working lifetime.

  3. LLL development of a combined etch track: albedo dosimeter

    International Nuclear Information System (INIS)

    Griffith, R.V.; Fisher, J.C.; Harder, C.A.

    1977-01-01

    The addition of polycarbonate sheet to albedo detectors for electrochemical etching provides a simple, inexpensive way to reduce the spectral sensitivity of the personnel dosimeter without losing the albedo features of sensitivity and ease of automation. The ECEP technique also provides the dosimetrist with the potential for identifying conditions of body orientation that might otherwise lead to significant error in dosimeter evaluation

  4. Semiconductor neutron detectors based on new types of materials

    International Nuclear Information System (INIS)

    Pochet, T.; Foulon, F.

    1993-01-01

    Neutron detection in hostile environments such as nuclear reactors has been performed using a new kind of semiconductor detector. So far, crystalline semiconductor detectors are not used in nuclear reactor instrumentation because of their sensitivity to radiation damage. For doses in excess of a few tens of kilo rads, radiation induced lattice defects produce a strong loss in the standard semiconductor detector performances. In the last few years, new semiconductor materials having amorphous or polycrystalline structures such as silicon, silicon carbide or CVD diamond, became available. These semiconductors, produced by Chemical Vapor Deposition, come in the form of thin layers being typically a few tens of micron thick. Their crystalline structure is particularly resistant to radiation damage up to a few Mrads but prevent the material use in spectrometry measurements. Nevertheless, these detectors, working in a counting mode, are suitable for the detection of alpha particles produced by the neutron capture reaction with boron. Such thin film detectors have a very poor sensitivity to γ-ray background. Furthermore, they are easier and cheaper to implement than current neutron gas counters. Preliminary results obtained with diamond and amorphous silicon diodes exposed to α particles are presented. (authors). 7 figs., 3 tabs., 11 refs

  5. [Calorimeter based detectors for high energy hadron colliders

    International Nuclear Information System (INIS)

    1992-01-01

    This document provides a progress report on research that has been conducted under DOE Grant DEFG0292ER40697 for the past year, and describes proposed work for the second year of this 8 year grant starting November 15, 1992. Personnel supported by the contract include 4 faculty, 1 research faculty, 4 postdocs, and 9 graduate students. The work under this grant has in the past been directed in two complementary directions -- DO at Fermilab, and the second SSC detector GEM. A major effort has been towards the construction and commissioning of the new Fermilab Collider detector DO, including design, construction, testing, the commissioning of the central tracking and the central calorimeters. The first DO run is now underway, with data taking and analysis of the first events. Trigger algorithms, data acquisition, calibration of tracking and calorimetry, data scanning and analysis, and planning for future upgrades of the DO detector with the advent of the FNAL Main Injector are all involved. The other effort supported by this grant has been towards the design of GEM, a large and general-purpose SSC detector with special emphasis on accurate muon measurement over a large solid angle. This effort will culminate this year in the presentation to the SSC laboratory of the GEM Technical Design Report. Contributions are being made to the detector design, coordination, and physics simulation studies with special emphasis on muon final states. Collaboration with the RD5 group at CERN to study muon punch through and to test cathode strip chamber prototypes was begun

  6. A time - zero detector based on thin film plastic scintillator

    International Nuclear Information System (INIS)

    Petrovici, M.; Simion, V.; Pagano, A.; Urso, S.; Geraci, E.

    1998-01-01

    Thin film scintillator used as a fast time-zero detector exhibits some advantages: fast response, small energy loss of transmitted particles, insensitivity to radiation damage, high efficiency and high counting rate capability. In order to increase the efficiency of the light collection, the scintillating plastic foil is housed in a reflecting body having an ellipsoidal geometry. A concave ellipsoidal mirror has the property that the geometrical foci are optically conjugate points and consequently, all optical path lengths from one focus to the other via a single reflection are equal. With the thin scintillator foil situated at one focal point and the PM's photocathode at the other one, an excellent light collection can be obtained. The principle of detector and the main components are presented. For our purposes we constructed the detector in two variants: glass mirror and polished aluminium mirror. The semi-axes of the ellipsoidal profile are: a 49.8 mm, b = 34.2 mm for the glass mirror and a = 35 mm, b = 26.5 mm for the aluminium mirror, respectively. The diameter of the beam access hole on the both mirrors is 12 mm. The detectors are foreseen to be used at 4π detecting system CHIMERA for experiments with heavy ion beams at intermediate energies delivered by Superconducting Cyclotron from LNS - Catania. Presently, the performance of these detectors are tested using alpha radioactive sources and in-beam measurements. (authors)

  7. Reactive ion etching of microphotonic structures

    International Nuclear Information System (INIS)

    Du, J.; Glasscock, J.; Vanajek, J.; Savvides, N.

    2004-01-01

    Full text: Fabrication of microphotonic structures such as planar waveguides and other periodic structures based on silicon technology has become increasingly important due to the potential for integration of planar optical devices. We have fabricated various periodic microstructures on silicon wafers using standard optical lithography and reactive ion etching (RIE). For optical applications the surface roughness and the sidewall angle or steepness of microstructures are the most critical factors. In particular, sidewall roughness of the etched waveguide core accounts for most of the optical propagation loss. We show that by varying the main RIE parameters such as gas pressure, RF power and CF 4 /Ar/O 2 gas composition it is possible to produce microstructures with near-vertical sidewalls and very smooth surfaces. In addition to plasma etching conditions, poor edge quality of the mask often causes sidewall roughness. We employed Ni/Cr metal masks in these experiments for deep etching, and used Ar + ion milling instead of wet chemical etching to open the mask. This improves the edge quality of the mask and ultimately results in smooth sidewalls

  8. Possibility of gravitational wave detector production on the base of light diffraction

    International Nuclear Information System (INIS)

    Segizboev, T.I.

    1989-01-01

    Gravitational wave detector based on the light diffraction is proposed. Under the gravitation wave incidence on an elastic rod standing acoustic oscillations are excited in it, which are then used as a diffraction grating for the light scattering. A detailed mathematical analysis of this detector is given. 1 ref

  9. Development and analysis of silicon based detectors for low energy nuclear radiation

    International Nuclear Information System (INIS)

    Johansen, G.A.

    1990-11-01

    The design and assembly of a prototype silicon based detector especially for the detection of auroral X-rays is presented. The theoretical fundamentals are shown and the adoption of the detector for applications in future satellite experiments are described. 136 refs

  10. Etching radical controlled gas chopped deep reactive ion etching

    Science.gov (United States)

    Olynick, Deidre; Rangelow, Ivo; Chao, Weilun

    2013-10-01

    A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH.sub.4 and controlling the passivation rate and stoichiometry using a CF.sub.2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced. Results show silicon features with an aspect ratio of 20:1 for 10 nm features with applicability to nano-applications in the sub-50 nm regime. By comparison, previous traditional gas chopping techniques have produced rippled or scalloped sidewalls in a range of 50 to 100 nm roughness.

  11. High Performance Supercapacitors Based on the Electrodeposited Co3O4 Nanoflakes on Electro-etched Carbon Fibers

    International Nuclear Information System (INIS)

    Kazemi, S.H.; Asghari, A.; Kiani, M.A.

    2014-01-01

    Graphical abstract: In the present work, excellent supercapacitive behavior of nanostructured Co3O4-ECF with outstanding cycling stability and capacitance retention was observed. These characteristics can be attributed to three dimensional (3D) structures of nanoflakes which allow facile electrolyte movement during charge or discharge processes. A specific capacitance of 598.9 F g(1 at a currents density of 3.1 A g(1 was obtained for Co3O4-ECF electrode in addition to high energy and power densities. - Highlights: • A facile method was introduced to prepare Co 3 O 4 nanostructures for supercapacitor purpuoses. • Superior long-life stability and high specific capacitance at large current density were observed. • Capacitive behavior was remained almost constant after 1000 successive charge-discharge cycles. - Abstract: Present article introduces the electrochemical fabrication of cobalt oxide nanostructures on electro-etched carbon fiber (ECF) by a cathodic potential step method. The morphology and composition of the nanostructures were studied by field emission scanning electron microscopy (FE-SEM), energy dispersive X-ray analysis (EDX), X-ray diffraction analysis (XRD) and thermal analysis (TA) methods. FE-SEM images confirm the formation of flower-like Co 3 O 4 nanoflakes on ECF (Co 3 O 4 -ECF). Cobalt hydroxide nanostructures transform into spinel structure after annealing in air at 300 °C for 2 hours. The electrochemical and supercapacitive performance of Co 3 O 4 -ECF was investigated by cyclic voltammetry (CV), galvanostatic charge-discharge, and electrochemical impedance spectroscopy (EIS) in both three and two electrode systems in KOH solution. Results confirm the excellent supercapacitive behavior of nanostructured Co 3 O 4 -ECF with excellent cycling stability and capacitance retention. These characteristics can be attributed to three dimensional (3D) structures of nanoflakes which allow facile electrolyte movement during charge or discharge

  12. Finite detector based projection model for super resolution CT

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Hengyong; Wang, Ge [Wake Forest Univ. Health Sciences, Winston-Salem, NC (United States). Dept. of Radiology; Virgina Tech, Blacksburg, VA (United States). Biomedical Imaging Div.

    2011-07-01

    For finite detector and focal spot sizes, here we propose a projection model for super resolution CT. First, for a given X-ray source point, a projection datum is modeled as an area integral over a narrow fan-beam connecting the detector elemental borders and the X-ray source point. Then, the final projection value is expressed as the integral obtained in the first step over the whole focal spot support. An ordered-subset simultaneous algebraic reconstruction technique (OS-SART) is developed using the proposed projection model. In the numerical simulation, our method produces super spatial resolution and suppresses high-frequency artifacts. (orig.)

  13. The etching property of the surface of CR-39 and the track core radius of fission fragment

    CERN Document Server

    Mineyama, D; Yamauchi, T; Oda, K; El-Rahman, A

    2002-01-01

    The etch pits of fission fragments in CR-39 detector have been observed carefully using an atomic force microscope (AFM) after extremely short chemical etching in stirred 6N KOH solution kept at 70degC. It was found that there existed a thin layer where the bulk etch rate is relativity from large the etch-pit growth curve for the etching duration between 10 and 1800 seconds. The track core radius of fission fragment was evaluated to be about 6 nm from the extrapolation of the growth curve in a thinner region. (author)

  14. Metal-assisted etch combined with regularizing etch

    Energy Technology Data Exchange (ETDEWEB)

    Yim, Joanne; Miller, Jeff; Jura, Michael; Black, Marcie R.; Forziati, Joanne; Murphy, Brian; Magliozzi, Lauren

    2018-03-06

    In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.

  15. Inverse metal-assisted chemical etching produces smooth high aspect ratio InP nanostructures.

    Science.gov (United States)

    Kim, Seung Hyun; Mohseni, Parsian K; Song, Yi; Ishihara, Tatsumi; Li, Xiuling

    2015-01-14

    Creating high aspect ratio (AR) nanostructures by top-down fabrication without surface damage remains challenging for III-V semiconductors. Here, we demonstrate uniform, array-based InP nanostructures with lateral dimensions as small as sub-20 nm and AR > 35 using inverse metal-assisted chemical etching (I-MacEtch) in hydrogen peroxide (H2O2) and sulfuric acid (H2SO4), a purely solution-based yet anisotropic etching method. The mechanism of I-MacEtch, in contrast to regular MacEtch, is explored through surface characterization. Unique to I-MacEtch, the sidewall etching profile is remarkably smooth, independent of metal pattern edge roughness. The capability of this simple method to create various InP nanostructures, including high AR fins, can potentially enable the aggressive scaling of InP based transistors and optoelectronic devices with better performance and at lower cost than conventional etching methods.

  16. An assesment of the characteristics of the GM detectors and iodine remote detectors of the Paks environmental monitoring system based on the data measured from 1982 to 1985

    International Nuclear Information System (INIS)

    Nagy, Gy.; Lang, Edit; Deme, S.; Feher, I.

    1986-03-01

    Measurements performed at the GM detectors and iodine remote detectors of the continuous environmental monitoring system of the Paks NPP can be used for estimating the effect of atmospheric releases. Based on the investigations carried out from Sep. 1982 to July 1985, a good correlation between the signals and the background radioactivity levels could be established. It was further stated that radon fallout during raining was responsible for significant signal changes of both types of detectors. (V.N.)

  17. One dimensional detector for X-ray diffraction with superior energy resolution based on silicon strip detector technology

    International Nuclear Information System (INIS)

    Dąbrowski, W; Fiutowski, T; Wiącek, P; Fink, J; Krane, H-G

    2012-01-01

    1-D position sensitive X-ray detectors based on silicon strip detector technology have become standard instruments in X-ray diffraction and are available from several vendors. As these devices have been proven to be very useful and efficient further improvement of their performance is investigated. The silicon strip detectors in X-ray diffraction are primarily used as counting devices and the requirements concerning the spatial resolution, dynamic range and count rate capability are of primary importance. However, there are several experimental issues in which a good energy resolution is important. The energy resolution of silicon strip detectors is limited by the charge sharing effects in the sensor as well as by noise of the front-end electronics. The charge sharing effects in the sensor and various aspects of the electronics, including the baseline fluctuations, which affect the energy resolution, have been analyzed in detail and a new readout concept has been developed. A front-end ASIC with a novel scheme of baseline restoration and novel interstrip logic circuitry has been designed. The interstrip logic is used to reject the events resulting in significant charge sharing between neighboring strips. At the expense of rejecting small fraction of photons entering the detector one can obtain single strip energy spectra almost free of charge sharing effects. In the paper we present the design considerations and measured performance of the detector being developed. The electronic noise of the system at room temperature is typically of the order of 70 el rms for 17 mm long silicon strips and a peaking time of about 1 μs. The energy resolution of 600 eV FWHM has been achieved including the non-reducible charge sharing effects and the electronic noise. This energy resolution is sufficient to address a common problem in X-ray diffraction, i.e. electronic suppression of the fluorescence radiation from samples containing iron or cobalt while irradiated with 8.04 ke

  18. The influence of chemical etching time on efficiency of radon detection using CR-39

    International Nuclear Information System (INIS)

    Reway, Adriana P.; Kappke, Jaqueline; Narloch, Danielle C.; Del Claro, Flavia; Paschuk, Sergei A.; Correa, Janine N.

    2015-01-01

    Natural radiation is the principal source of human exposure to ionizing radiation. Radon is noble radioactive gas that emanates from the soil and rocks entering the atmosphere of dwellings where it could be accumulated. The inhalation of 222 Rn represents a significant health risk. Solid-State Nuclear Track Detectors (SSNTD) represents an efficient method for alpha particle detection and measurements of the activity concentration of 222 Rn. The aim of present work was to study the etching time impact on CR-39 efficiency in radon activity measurements. The investigation was performed using 80 CR-39 detectors, which were exposed to a source of radon. After the exposition, alpha particle tracks development was achieved by chemical etching using 6.25M NaOH solution and ethanol (2%) at 70°C. Etching alpha particle tracks were identified and counted manually using the optical microscope with magnification of 100x and glass overlay mask. The etching time ranged from 7 to 14 hours. The results show that there is an increase in the number of visible tracks with increased etching time. The number of traces obtained for 7 hours and 8 hours of revelation was 1430 +/- 90 and 2090 +/- 160, respectively. However, for etching time of 13 and 14 hours was not observed statistical increase in the number of visible tracks. The number of tracks in this situation was 3630 +/- 180 and 3870 +/- 160 to 13 and 14 hours etching. Thus, for assumed etching parameters, the etching optimal time was observed 14 hours. (author)

  19. Inductively coupled plasma etching of III-V antimonides in BCl{sub 3}/SiCl{sub 4} etch chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Swaminathan, K. [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)], E-mail: swaminak@ece.osu.edu; Janardhanan, P.E.; Sulima, O.V. [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)

    2008-10-01

    Inductively coupled plasma etching of GaSb using BCl{sub 3}/SiCl{sub 4} etch chemistry has been investigated. The etch rates were studied as a function of bias power, inductively coupled plasma source power, plasma chemistry and chamber pressure. The etched surfaces remain smooth and stoichiometric over the entire range of plasma conditions investigated. The knowledge gained in etching GaSb was applied to etching AlGaAsSb and InGaAsSb in order to fabricate heterojunction phototransistors. As expected, InGaAsSb etch rate was much lower compared to the corresponding value for GaSb, mainly due to the relatively low volatility of indium chlorides. For a wide range of plasma conditions, the selectivity between GaSb and AlGaAsSb was close to unity, which is desirable for fabricating etched mirrors and gratings for Sb-based mid-infrared laser diodes. The surface roughness and the etch profile were examined for the etched GaSb, AlGaAsSb and InGaAsSb samples using scanning electron microscope. The high etch rates achieved ({approx} 4 {mu}m/min) facilitated deep etching of GaSb. A single layer, soft mask (AZ-4903 photoresist) was used to etch GaSb, with etch depth {approx} 90 {mu}m. The deep dry etching of GaSb has many important applications including etching substrate windows for backside-illuminated photodetectors for the mid-infrared wavelength range.

  20. Implementing a Java Based GUI for RICH Detector Analysis

    Science.gov (United States)

    Lendacky, Andrew; Voloshin, Andrew; Benmokhtar, Fatiha

    2016-09-01

    The CLAS12 detector at Thomas Jefferson National Accelerator Facility (TJNAF) is undergoing an upgrade. One of the improvements is the addition of a Ring Imaging Cherenkov (RICH) detector to improve particle identification in the 3-8 GeV/c momentum range. Approximately 400 multi anode photomultiplier tubes (MAPMTs) are going to be used to detect Cherenkov Radiation in the single photoelectron spectra (SPS). The SPS of each pixel of all MAPMTs have been fitted to a mathematical model of roughly 45 parameters for 4 HVs, 3 OD. Out of those parameters, 9 can be used to evaluate the PMTs performance and placement in the detector. To help analyze data when the RICH is operational, a GUI application was written in Java using Swing and detector packages from TJNAF. To store and retrieve the data, a MySQL database program was written in Java using the JDBC package. Using the database, the GUI pulls the values and produces histograms and graphs for a selected PMT at a specific HV and OD. The GUI will allow researchers to easily view a PMT's performance and efficiency to help with data analysis and ring reconstruction when the RICH is finished.

  1. Particle detectors based on InP Schottky diodes

    Czech Academy of Sciences Publication Activity Database

    Yatskiv, Roman; Grym, Jan

    2012-01-01

    Roč. 10, č. 7 (2012), C100051-C100055 ISSN 1748-0221 R&D Projects: GA MŠk(CZ) OC10021; GA MŠk LD12014 Institutional support: RVO:67985882 Keywords : Particle detector * High purity InP layer * Schottky diode Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.869, year: 2011

  2. Amorphous selenium based detectors for medical imaging applications

    Science.gov (United States)

    Mandal, Krishna C.; Kang, Sung H.; Choi, Michael; Jellison, Gerald E., Jr.

    2006-08-01

    We have developed and characterized large volume amorphous (a-) selenium (Se) stabilized alloys for room temperature medical imaging devices and high-energy physics detectors. The synthesis and preparation of well-defined and high quality a-Se (B, As, Cl) alloy materials have been conducted using a specially designed alloying reactor at EIC and installed in an argon atmosphere glove box. The alloy composition has been precisely controlled and optimized to ensure good device performance. The synthesis of large volume boron (B) doped (natural and isotopic 10B) a-Se (As, Cl) alloys has been carried out by thoroughly mixing vacuum distilled and zone-refined (ZR) Se with previously synthesized Se-As master alloys, Se-Cl master alloys and B. The synthesized a-Se (B, As, Cl) alloys have been characterized by x-ray diffraction (XRD), differential scanning calorimetry (DSC), Fourier transform infra-red spectroscopy (FTIR), x-ray photoelectron spectroscopy (XPS), inductively coupled plasma mass spectroscopy (ICP-MS), and detector testing. The a- Se alloys have shown high promise for x-ray detectors with its high dark resistivity (10 10-10 13 Ωcm), good charge transport properties, and cost-effective large area scalability. Details of various steps about detector fabrication and testing of these imaging devices are also presented.

  3. Radiation effects on II-VI compound-based detectors

    CERN Document Server

    Cavallini, A; Dusi, W; Auricchio, N; Chirco, P; Zanarini, M; Siffert, P; Fougeres, P

    2002-01-01

    The performance of room temperature CdTe and CdZnTe detectors exposed to a radiation source can be strongly altered by the interaction of the ionizing particles and the material. Up to now, few experimental data are available on the response of II-VI compound detectors to different types of radiation sources. We have carried out a thorough investigation on the effects of gamma-rays, neutrons and electron irradiation both on CdTe : Cl and Cd sub 0 sub . sub 9 Zn sub 0 sub . sub 1 Te detectors. We have studied the detector response after radiation exposure by means of dark current measurements and of quantitative spectroscopic analyses at low and medium energies. The deep traps present in the material have been characterized by means of PICTS (photo-induced current transient spectroscopy) analyses, which allow to determine the trap apparent activation energy and capture cross-section. The evolution of the trap parameters with increasing irradiation doses has been monitored for all the different types of radiati...

  4. AIGO: a southern hemisphere detector for the worldwide array of ground-based interferometric gravitational wave detectors

    Energy Technology Data Exchange (ETDEWEB)

    Barriga, P; Blair, D G; Coward, D; Davidson, J; Dumas, J-C; Howell, E; Ju, L; Wen, L; Zhao, C [School of Physics, The University of Western Australia, Crawley, WA 6009 (Australia); McClelland, D E; Scott, S M; Slagmolen, B J J; Inta, R [Department of Physics, Faculty of Science, Australian National University, Canberra, ACT 0200 (Australia); Munch, J; Ottaway, D J; Veitch, P; Hosken, D [Department of Physics, University of Adelaide, Adelaide, SA 5005 (Australia); Melatos, A; Chung, C; Sammut, L, E-mail: pbarriga@cyllene.uwa.edu.a [School of Physics University of Melbourne, Parkville, Vic 3010 (Australia)

    2010-04-21

    This paper describes the proposed AIGO detector for the worldwide array of interferometric gravitational wave detectors. The first part of the paper summarizes the benefits that AIGO provides to the worldwide array of detectors. The second part gives a technical description of the detector, which will follow closely the Advanced LIGO design. Possible technical variations in the design are discussed.

  5. AIGO: a southern hemisphere detector for the worldwide array of ground-based interferometric gravitational wave detectors

    OpenAIRE

    Barriga, P.; Blair, D.; Coward, D.; Davidson, J.; Dumas, J.; Howell, E.; Ju, L.; Wen, L.; Zhao, C.; McClelland, D.; Scott, S.; Slagmolen, B.; Inta, R.; Munch, J.; Ottaway, D.

    2010-01-01

    This paper describes the proposed AIGO detector for the worldwide array of interferometric gravitational wave detectors. The first part of the paper summarizes the benefits that AIGO provides to the worldwide array of detectors. The second part gives a technical description of the detector, which will follow closely the Advanced LIGO design. Possible technical variations in the design are discussed.

  6. Optical-fiber strain sensors with asymmetric etched structures.

    Science.gov (United States)

    Vaziri, M; Chen, C L

    1993-11-01

    Optical-fiber strain gauges with asymmetric etched structures have been analyzed, fabricated, and tested. These sensors are very sensitive with a gauge factor as high as 170 and a flat frequency response to at least 2.7 kHz. The gauge factor depends on the asymmetry of the etched structures and the number of etched sections. To understand the physical principles involved, researchers have used structural analysis programs based on a finite-element method to analyze fibers with asymmetric etched structures under tensile stress. The results show that lateral bends are induced on the etched fibers when they are stretched axially. To relate the lateral bending to the optical attenuation, we have also employed a ray-tracing technique to investigate the dependence of the attenuation on the structural deformation. Based on the structural analysis and the ray-tracing study parameters affecting the sensitivity have been studied. These results agree with the results of experimental investigations.

  7. Characterizing the response of a scintillator-based detector to single electrons

    International Nuclear Information System (INIS)

    Sang, Xiahan; LeBeau, James M.

    2016-01-01

    Here we report the response of a high angle annular dark field scintillator-based detector to single electrons. We demonstrate that care must be taken when determining the single electron intensity as significant discrepancies can occur when quantifying STEM images with different methods. To account for the detector response, we first image the detector using very low beam currents (∼8 fA), and subsequently model the interval between consecutive single electrons events. We find that single electrons striking the detector present a wide distribution of intensities, which we show is not described by a simple function. Further, we present a method to accurately account for the electrons within the incident probe when conducting quantitative imaging. The role detector settings play on determining the single electron intensity is also explored. Finally, we extend our analysis to describe the response of the detector to multiple electron events within the dwell interval of each pixel. - Highlights: • We show that the statistical description of single electron response of scintillator based detectors can be measured using a combination of small beam currents and short dwell times. • The average intensity from the probability distribution function can be used to normalize STEM images regardless of beam current and contrast settings. • We obtain consistent QSTEM normalization results from the single electron method and the conventional detector scan method.

  8. Technique for etching monolayer and multilayer materials

    Science.gov (United States)

    Bouet, Nathalie C. D.; Conley, Raymond P.; Divan, Ralu; Macrander, Albert

    2015-10-06

    A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi.sub.2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF.sub.3, Cl.sub.2, and O.sub.2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.

  9. Aging measurements on triple-GEM detectors operated with $CF_{4}$-based gas mixtures

    CERN Document Server

    Alfonsi, M; De Simone, P; Murtas, F; Poli Lener, M P; Bonivento, W; Cardini, A; Raspino, D; Saitta, B; Pinci, D; Baccaro, S; 10.1016/j.nuclphysbps.2005.03.054

    2006-01-01

    We present the results of a global irradiation test of full size triple-GEM detectors operated with CF/sub 4/-based gas mixtures. This study has been performed in the framework of an R&D activity on detectors for the innermost region of the first muon station of the LHCb experiment. The prototypes have been irradiated at the Calliope facility of the ENEA-Casaccia with a high intensity 1.25 MeV detectors performances have been measured with X-rays and with a 3 Ge V pion beam at CERN. A SEM analysis on several samples of the detectors has been performed to complete the understanding of the physical processes occurring in a GEM detector during a strong irradiation.

  10. Aging measurements on triple-GEM detectors operated with $CF_{4}$- based gas mixtures

    CERN Document Server

    Alfonsi, M; Bencivenni, G; Bonivento, W; Cardini, A; Lener, M P; Murtas, F; Pinci, D; Raspino, D; Saitta, B; De Simone, P

    2004-01-01

    We present the results of a global irradiation test of full size triple-GEM detectors operated with CF/sub 4/-based gas mixtures. This study has been performed in the framework of an R&D activity on detectors for the innermost region of the first muon station of the LHCb experiment. The prototypes have been irradiated at the Calliope facility of the ENEA-Casaccia with a high intensity 1.25 MeV gamma from a /sup 60/Co source. After the irradiation test the detectors performances have been measured with X-rays and with a 3 GeV pion beam at CERN. A SEM analysis on several samples of the detectors has been performed to complete the understanding of the physical processes occurring in the GEM detector during the strong irradiation.

  11. Long-distance transmission of light in a scintillator-based radiation detector

    Science.gov (United States)

    Dowell, Jonathan L.; Talbott, Dale V.; Hehlen, Markus P.

    2017-07-11

    Scintillator-based radiation detectors capable of transmitting light indicating the presence of radiation for long distances are disclosed herein. A radiation detector can include a scintillator layer and a light-guide layer. The scintillator layer is configured to produce light upon receiving incident radiation. The light-guide layer is configured to receive light produced by the scintillator layer and either propagate the received light through the radiation detector or absorb the received light and emit light, through fluorescence, that is propagated through the radiation detector. A radiation detector can also include an outer layer partially surrounding the scintillator layer and light-guide layer. The index of refraction of the light-guide layer can be greater than the index of refraction of adjacent layers.

  12. An InGrid based Low Energy X-ray Detector

    CERN Document Server

    Krieger, Christoph; Kaminski, Jochen; Lupberger, Michael; Vafeiadis, Theodoros

    2014-01-01

    An X-ray detector based on the combination of an integrated Micromegas stage with a pixel chip has been built in order to be installed at the CERN Axion Solar Telescope. Due to its high granularity and spatial resolution this detector allows for a topological background suppression along with a detection threshold below $1\\,\\text{keV}$. Tests at the CAST Detector Lab show the detector's ability to detect X-ray photons down to an energy as low as $277\\,\\text{eV}$. The first background data taken after the installation at the CAST experiment underline the detector's performance with an average background rate of $5\\times10^{-5}\\,/\\text{keV}/\\text{cm}^2/\\text{s}$ between 2 and $10\\,\\text{keV}$ when using a lead shielding.

  13. The former tests realized to a personal neutron dosemeter based on solid nuclear tracks detector

    International Nuclear Information System (INIS)

    Camacho, M.E.; Tavera, L.; Balcazar, M.

    1997-01-01

    Due to the increase in the use of neutron radiation a personal neutron dosemeter based on solid nuclear tracks detector (DSTN) was designed and constructed. The personal dosemeter design consists of three arrangements. The first one consists of a plastic nuclear tracks detector (LR115 or CR39) in contact with a LiF pellet. The second one is the same that above but it placed among two cadmium pellets and, the third one is formed by the alone detector without converter neither neutron absorber. The three arrangements are placed inside a plastic porta detector hermetically closed to avoid the bottom produced by environmental radon whichever both detectors (LR115 and CR39) are sensitive. In this work the former tests realized to that dosemeter are presented. (Author)

  14. Fabrication of high quality GaN nanopillar arrays by dry and wet chemical etching

    OpenAIRE

    Paramanik, Dipak; Motayed, Abhishek; King, Matthew; Ha, Jong-Yoon; Kryluk, Sergi; Davydov, Albert V.; Talin, Alec

    2013-01-01

    We study strain relaxation and surface damage of GaN nanopillar arrays fabricated using inductively coupled plasma (ICP) etching and post etch wet chemical treatment. We controlled the shape and surface damage of such nanopillar structures through selection of etching parameters. We compared different substrate temperatures and different chlorine-based etch chemistries to fabricate high quality GaN nanopillars. Room temperature photoluminescence and Raman scattering measurements were carried ...

  15. Saturated virtual fluorescence emission difference microscopy based on detector array

    Science.gov (United States)

    Liu, Shaocong; Sun, Shiyi; Kuang, Cuifang; Ge, Baoliang; Wang, Wensheng; Liu, Xu

    2017-07-01

    Virtual fluorescence emission difference microscopy (vFED) has been proposed recently to enhance the lateral resolution of confocal microscopy with a detector array, implemented by scanning a doughnut-shaped pattern. Theoretically, the resolution can be enhanced by around 1.3-fold compared with that in confocal microscopy. For further improvement of the resolving ability of vFED, a novel method is presented utilizing fluorescence saturation for super-resolution imaging, which we called saturated virtual fluorescence emission difference microscopy (svFED). With a point detector array, matched solid and hollow point spread functions (PSF) can be obtained by photon reassignment, and the difference results between them can be used to boost the transverse resolution. Results show that the diffraction barrier can be surpassed by at least 34% compared with that in vFED and the resolution is around 2-fold higher than that in confocal microscopy.

  16. Room temperature particle detectors based on indium phosphide

    Czech Academy of Sciences Publication Activity Database

    Yatskiv, Roman; Grym, Jan; Žďánský, Karel; Pekárek, Ladislav

    2010-01-01

    Roč. 612, č. 2 (2010), s. 334-337 ISSN 0168-9002 R&D Projects: GA AV ČR KJB200670901; GA AV ČR(CZ) KAN401220801; GA ČR(CZ) GP102/08/P617 Institutional research plan: CEZ:AV0Z20670512 Keywords : Particle detector * Semi-insulating InP * High purity InP layers Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.142, year: 2010

  17. A directional gamma-ray detector based on scintillator plates

    Energy Technology Data Exchange (ETDEWEB)

    Hanna, D., E-mail: hanna@physics.mcgill.ca; Sagnières, L.; Boyle, P.J.; MacLeod, A.M.L.

    2015-10-11

    A simple device for determining the azimuthal location of a source of gamma radiation, using ideas from astrophysical gamma-ray burst detection, is described. A compact and robust detector built from eight identical modules, each comprising a plate of CsI(Tl) scintillator coupled to a photomultiplier tube, can locate a point source of gamma rays with degree-scale precision by comparing the count rates in the different modules. Sensitivity to uniform environmental background is minimal.

  18. The novel photon detectors based on MPGD technologies for the upgrade of COMPASS RICH-1

    CERN Document Server

    Tessarotto, F.; Alexeev, M.; Azevedo, C.D.R.; Birsa, R.; Bradamante, F.; Bressan, A.; Chatterjee, C.; Chiosso, M.; Cicuttin, A.; Ciliberti, P.; Crespo, M.L.; Dalla Torre, S.; Dasgupta, S.S.; Denisov, O.; Finger, M.; Finger Jr., M.; Gobbo, B.; Gregori, M.; Hamar, G.; Levorato, S.; Maggiora, A.; Martin, A.; Menon, G.; Novy, J.; Panzieri, D.; Pereira, F.A.B.; Santos, C.A.; Sbrizzai, G.; Slunecka, M.; Steiger, K.; Steiger, L.; Sulc, M.; Veloso, J.F.C.A.; Zhao,Y.

    2018-01-01

    The RICH-1 Detector of the COMPASS experiment at CERN SPS has undergone an important upgrade in 2016. Four new photon detectors, based on MPGD technology and covering a total active area larger than 1.2~m2 have replaced the previously used MWPC-based photon detectors. The new detector architecture, resulting from a dedicated, eight years long, R\\&D program, consists in a hybrid MPGD combination of two THGEMs and a Micromegas stage; the first THGEM, coated with a CsI layer, acts as a reflective photocathode. The signals are extracted from the anode pads by capacitive coupling and read-out by analog front-end electronics based on the APV25 chip. The new COMPASS RICH-1 photon detectors are described in detail: the detector design, the engineering aspects, the mass production, and the quality assessment are discussed. The assembly of the MPGD components and the installation of the new detectors are illustrated together with the main aspects of the commissioning. Preliminary indication of performance results a...

  19. Preliminary quantification of a shape model for etch-pits formed during natural weathering of olivine

    International Nuclear Information System (INIS)

    Nowicki, M. Anna; Velbel, Michael A.

    2011-01-01

    Many etch-pits on olivine grains occur as a pair of cone-shaped pits sharing a base, which consequently appear as diamond-shaped etch-pits in cross-section. Quantitative image analysis of back-scattered electron images establishes empirical dimensions of olivine etch-pits in naturally weathered samples from Hawaii and North Carolina. Images of naturally etched olivine were acquired from polished thin-sections by scanning electron microscopy. An average cone-radius-to-height ratio (r:h) of 1.78 was determined for diamond-shaped cross-sections of etch-pits occurring in naturally weathered olivine grains, largely consistent with previous qualitative results. Olivine etch-pit shape as represented by r:h varies from slightly more than half the average value to slightly more than twice the average. Etch-pit shape does not appear to vary systematically with etch-pit size.

  20. Anodic etching of GaN based film with a strong phase-separated InGaN/GaN layer: Mechanism and properties

    International Nuclear Information System (INIS)

    Gao, Qingxue; Liu, Rong; Xiao, Hongdi; Cao, Dezhong; Liu, Jianqiang; Ma, Jin

    2016-01-01

    Highlights: • GaN film with a strong phase-separated InGaN/GaN layer was etched by electrochemical etching. • Vertically aligned nanopores in n-GaN films were buried underneath the InGaN/GaN structures. • The relaxation of compressive stress in the MQW structure was found by PL and Raman spectra. - Abstract: A strong phase-separated InGaN/GaN layer, which consists of multiple quantum wells (MQW) and superlattices (SL) layers and can produce a blue wavelength spectrum, has been grown on n-GaN thin film, and then fabricated into nanoporous structures by electrochemical etching method in oxalic acid. Scanning electron microscopy (SEM) technique reveals that the etching voltage of 8 V leads to a vertically aligned nanoporous structure, whereas the films etched at 15 V show branching pores within the n-GaN layer. Due to the low doping concentration of barriers (GaN layers) in the InGaN/GaN layer, we observed a record-low rate of etching (<100 nm/min) and nanopores which are mainly originated from the V-pits in the phase-separated layer. In addition, there exists a horizontal nanoporous structure at the interface between the phase-separated layer and the n-GaN layer, presumably resulting from the high transition of electrons between the barrier and the well (InGaN layer) at the interface. As compared to the as-grown MQW structure, the etched MQW structure exhibits a photoluminescence (PL) enhancement with a partial relaxation of compressive stress due to the increased light-extracting surface area and light-guiding effect. Such a compressive stress relaxation can be further confirmed by Raman spectra.

  1. Anodic etching of GaN based film with a strong phase-separated InGaN/GaN layer: Mechanism and properties

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Qingxue [School of Physics, Shandong University, Jinan, 250100 (China); Liu, Rong [Department of Fundamental Theories, Shandong Institute of Physical Education and Sports, Jinan 250063 (China); Xiao, Hongdi, E-mail: hdxiao@sdu.edu.cn [School of Physics, Shandong University, Jinan, 250100 (China); Cao, Dezhong; Liu, Jianqiang; Ma, Jin [School of Physics, Shandong University, Jinan, 250100 (China)

    2016-11-30

    Highlights: • GaN film with a strong phase-separated InGaN/GaN layer was etched by electrochemical etching. • Vertically aligned nanopores in n-GaN films were buried underneath the InGaN/GaN structures. • The relaxation of compressive stress in the MQW structure was found by PL and Raman spectra. - Abstract: A strong phase-separated InGaN/GaN layer, which consists of multiple quantum wells (MQW) and superlattices (SL) layers and can produce a blue wavelength spectrum, has been grown on n-GaN thin film, and then fabricated into nanoporous structures by electrochemical etching method in oxalic acid. Scanning electron microscopy (SEM) technique reveals that the etching voltage of 8 V leads to a vertically aligned nanoporous structure, whereas the films etched at 15 V show branching pores within the n-GaN layer. Due to the low doping concentration of barriers (GaN layers) in the InGaN/GaN layer, we observed a record-low rate of etching (<100 nm/min) and nanopores which are mainly originated from the V-pits in the phase-separated layer. In addition, there exists a horizontal nanoporous structure at the interface between the phase-separated layer and the n-GaN layer, presumably resulting from the high transition of electrons between the barrier and the well (InGaN layer) at the interface. As compared to the as-grown MQW structure, the etched MQW structure exhibits a photoluminescence (PL) enhancement with a partial relaxation of compressive stress due to the increased light-extracting surface area and light-guiding effect. Such a compressive stress relaxation can be further confirmed by Raman spectra.

  2. Platelike WO3 sensitized with CdS quantum dots heterostructures for photoelectrochemical dynamic sensing of H2O2 based on enzymatic etching.

    Science.gov (United States)

    Wang, Yanhu; Gao, Chaomin; Ge, Shenguang; Yu, Jinghua; Yan, Mei

    2016-11-15

    A platelike tungsten trioxide (WO3) sensitized with CdS quantum dots (QDs) heterojunction is developed for solar-driven, real-time, and selective photoelectrochemical (PEC) sensing of H2O2 in the living cells. The structure is synthesized by hydrothermally growing platelike WO3 on fluorine doped tin oxide (FTO) and subsequently sensitized with CdS QDs. The as-prepared WO3-CdS QDs heterojunction achieve significant photocurrent enhancement, which is remarkably beneficial for light absorption and charge carrier separation. Based on the enzymatic etching of CdS QDs enables the activation of quenching the charge transfer efficiency, thus leading to sensitive PEC recording of H2O2 level in buffer and cellular environments. The results indicated that the proposed method will pave the way for the development of excellent PEC sensing platform with the quantum dot sensitization. This study could also provide a new train of thought on designing of self-operating photoanode in PEC sensing, promoting the application of semiconductor nanomaterials in photoelectrochemistry. Copyright © 2016 Elsevier B.V. All rights reserved.

  3. Sub-parts per million NO2 chemi-transistor sensors based on composite porous silicon/gold nanostructures prepared by metal-assisted etching.

    Science.gov (United States)

    Sainato, Michela; Strambini, Lucanos Marsilio; Rella, Simona; Mazzotta, Elisabetta; Barillaro, Giuseppe

    2015-04-08

    Surface doping of nano/mesostructured materials with metal nanoparticles to promote and optimize chemi-transistor sensing performance represents the most advanced research trend in the field of solid-state chemical sensing. In spite of the promising results emerging from metal-doping of a number of nanostructured semiconductors, its applicability to silicon-based chemi-transistor sensors has been hindered so far by the difficulties in integrating the composite metal-silicon nanostructures using the complementary metal-oxide-semiconductor (CMOS) technology. Here we propose a facile and effective top-down method for the high-yield fabrication of chemi-transistor sensors making use of composite porous silicon/gold nanostructures (cSiAuNs) acting as sensing gate. In particular, we investigate the integration of cSiAuNs synthesized by metal-assisted etching (MAE), using gold nanoparticles (NPs) as catalyst, in solid-state junction-field-effect transistors (JFETs), aimed at the detection of NO2 down to 100 parts per billion (ppb). The chemi-transistor sensors, namely cSiAuJFETs, are CMOS compatible, operate at room temperature, and are reliable, sensitive, and fully recoverable for the detection of NO2 at concentrations between 100 and 500 ppb, up to 48 h of continuous operation.

  4. Smartphone based point-of-care detector of urine albumin

    Science.gov (United States)

    Cmiel, Vratislav; Svoboda, Ondrej; Koscova, Pavlina; Provaznik, Ivo

    2016-03-01

    Albumin plays an important role in human body. Its changed level in urine may indicate serious kidney disorders. We present a new point-of-care solution for sensitive detection of urine albumin - the miniature optical adapter for iPhone with in-built optical filters and a sample slot. The adapter exploits smart-phone flash to generate excitation light and camera to measure the level of emitted light. Albumin Blue 580 is used as albumin reagent. The proposed light-weight adapter can be produced at low cost using a 3D printer. Thus, the miniaturized detector is easy to use out of lab.

  5. Array element of a space-based synchrotron radiation detector

    International Nuclear Information System (INIS)

    Lee, M.W.; Commichau, S.C.; Kim, G.N.; Son, D.; Viertel, G.M.

    2006-01-01

    A synchrotron radiation detector (SRD) has been proposed as part of the Alpha Magnetic Spectrometer experiment on the International Space Station to study cosmic ray electrons and positrons in the TeV energy range. The SRD will identify these particles by detecting their emission of synchrotron radiation in the Earth's magnetic field. This article reports on the study of key technical parameters for the array elements which form the SRD, including the choice of the detecting medium, the sensor and the readout system

  6. Large Format CMOS-based Detectors for Diffraction Studies

    Science.gov (United States)

    Thompson, A. C.; Nix, J. C.; Achterkirchen, T. G.; Westbrook, E. M.

    2013-03-01

    Complementary Metal Oxide Semiconductor (CMOS) devices are rapidly replacing CCD devices in many commercial and medical applications. Recent developments in CMOS fabrication have improved their radiation hardness, device linearity, readout noise and thermal noise, making them suitable for x-ray crystallography detectors. Large-format (e.g. 10 cm × 15 cm) CMOS devices with a pixel size of 100 μm × 100 μm are now becoming available that can be butted together on three sides so that very large area detector can be made with no dead regions. Like CCD systems our CMOS systems use a GdOS:Tb scintillator plate to convert stopping x-rays into visible light which is then transferred with a fiber-optic plate to the sensitive surface of the CMOS sensor. The amount of light per x-ray on the sensor is much higher in the CMOS system than a CCD system because the fiber optic plate is only 3 mm thick while on a CCD system it is highly tapered and much longer. A CMOS sensor is an active pixel matrix such that every pixel is controlled and readout independently of all other pixels. This allows these devices to be readout while the sensor is collecting charge in all the other pixels. For x-ray diffraction detectors this is a major advantage since image frames can be collected continuously at up 20 Hz while the crystal is rotated. A complete diffraction dataset can be collected over five times faster than with CCD systems with lower radiation exposure to the crystal. In addition, since the data is taken fine-phi slice mode the 3D angular position of diffraction peaks is improved. We have developed a cooled 6 sensor CMOS detector with an active area of 28.2 × 29.5 cm with 100 μm × 100 μm pixels and a readout rate of 20 Hz. The detective quantum efficiency exceeds 60% over the range 8-12 keV. One, two and twelve sensor systems are also being developed for a variety of scientific applications. Since the sensors are butt able on three sides, even larger systems could be built at

  7. Large Format CMOS-based Detectors for Diffraction Studies

    International Nuclear Information System (INIS)

    Thompson, A C; Westbrook, E M; Nix, J C; Achterkirchen, T G

    2013-01-01

    Complementary Metal Oxide Semiconductor (CMOS) devices are rapidly replacing CCD devices in many commercial and medical applications. Recent developments in CMOS fabrication have improved their radiation hardness, device linearity, readout noise and thermal noise, making them suitable for x-ray crystallography detectors. Large-format (e.g. 10 cm × 15 cm) CMOS devices with a pixel size of 100 μm × 100 μm are now becoming available that can be butted together on three sides so that very large area detector can be made with no dead regions. Like CCD systems our CMOS systems use a GdOS:Tb scintillator plate to convert stopping x-rays into visible light which is then transferred with a fiber-optic plate to the sensitive surface of the CMOS sensor. The amount of light per x-ray on the sensor is much higher in the CMOS system than a CCD system because the fiber optic plate is only 3 mm thick while on a CCD system it is highly tapered and much longer. A CMOS sensor is an active pixel matrix such that every pixel is controlled and readout independently of all other pixels. This allows these devices to be readout while the sensor is collecting charge in all the other pixels. For x-ray diffraction detectors this is a major advantage since image frames can be collected continuously at up 20 Hz while the crystal is rotated. A complete diffraction dataset can be collected over five times faster than with CCD systems with lower radiation exposure to the crystal. In addition, since the data is taken fine-phi slice mode the 3D angular position of diffraction peaks is improved. We have developed a cooled 6 sensor CMOS detector with an active area of 28.2 × 29.5 cm with 100 μm × 100 μm pixels and a readout rate of 20 Hz. The detective quantum efficiency exceeds 60% over the range 8-12 keV. One, two and twelve sensor systems are also being developed for a variety of scientific applications. Since the sensors are butt able on three sides, even larger systems could be built at

  8. Silicon PIN diode based electron-gamma coincidence detector system for Noble Gases monitoring.

    Science.gov (United States)

    Khrustalev, K; Popov, V Yu; Popov, Yu S

    2017-08-01

    We present a new second generation SiPIN based electron-photon coincidence detector system developed by Lares Ltd. for use in the Noble Gas measurement systems of the International Monitoring System and the On-site Inspection verification regimes of the Comprehensive Nuclear-Test Ban Treaty (CTBT). The SiPIN provide superior energy resolution for electrons. Our work describes the improvements made in the second generation detector cells and the potential use of such detector systems for other applications such as In-Situ Kr-85 measurements for non-proliferation purposes. Copyright © 2017 Elsevier Ltd. All rights reserved.

  9. Detector block based on arrays of 144 SiPMs and monolithic scintillators: A performance study

    International Nuclear Information System (INIS)

    González, A.J.; Conde, P.; Iborra, A.; Aguilar, A.; Bellido, P.; García-Olcina, R.; Hernández, L.; Moliner, L.; Rigla, J.P.; Rodríguez-Álvarez, M.J.; Sánchez, F.; Seimetz, M.; Soriano, A.; Torres, J.; Vidal, L.F.; Benlloch, J.M.

    2015-01-01

    We have developed a detector block composed by a monolithic LYSO scintillator coupled to a custom made 12×12 SiPMs array. The design is mainly focused to applications such as Positron Emission Tomography. The readout electronics is based on 3 identical and scalable Application Specific Integrated Circuits (ASIC). We have determined the main performance of the detector block namely spatial, energy, and time resolution but also the system capability to determine the photon depth of interaction, for different crystal surface treatments. Intrinsic detector spatial resolution values as good as 1.7 mm FWHM and energies of 15% for black painted crystals were measured

  10. Optical diagnostics for plasma etching

    NARCIS (Netherlands)

    Bisschops, T.H.J.; Kroesen, G.M.W.; Veldhuizen, van E.M.; de Zeeuw, C.J.H.; Timmermans, C.J.

    1985-01-01

    Several optical diagnostics were used to det. plasma properties and etch rates in an single wafer etch reactor. Results of UV-visible spectroscopy and IR absorption spectroscopy, indicating different mol. species and their densities are presented. The construction of an interferometer to det. the

  11. Uniformly thinned optical fibers produced via HF etching with spectral and microscopic verification.

    Science.gov (United States)

    Bal, Harpreet K; Brodzeli, Zourab; Dragomir, Nicoleta M; Collins, Stephen F; Sidiroglou, Fotios

    2012-05-01

    A method for producing uniformly thinned (etched) optical fibers is described, which can also be employed to etch optical fibers containing a Bragg grating (FBG) uniformly for evanescent-field-based sensing and other applications. Through a simple modification of this method, the fabrication of phase-shifted FBGs based on uneven etching is also shown. The critical role of how a fiber is secured is shown, and the success of the method is illustrated, by differential interference contrast microscopy images of uniformly etched FBGs. An etched FBG sensor for the monitoring of the refractive index of different glycerin solutions is demonstrated.

  12. Development of high temperature, radiation hard detectors based on diamond

    Energy Technology Data Exchange (ETDEWEB)

    Metcalfe, Alex, E-mail: Alex.Metcalfe@brunel.ac.uk [Wolfson Centre for Materials Processing, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Fern, George R. [Wolfson Centre for Materials Processing, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Hobson, Peter R. [Centre for Sensors & Instrumentation, College of Engineering, Design and Physical Sciences, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Ireland, Terry; Salimian, Ali; Silver, Jack [Wolfson Centre for Materials Processing, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Smith, David R. [Centre for Sensors & Instrumentation, College of Engineering, Design and Physical Sciences, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Lefeuvre, Gwenaelle [Micron Semiconductor Ltd., Lancing BN15 8 SJ (United Kingdom); Saenger, Richard [Schlumberger Limited, 91240 Clamart (France)

    2017-02-11

    Single crystal CVD diamond has many desirable properties compared to current, well developed, detector materials; exceptional radiation, chemical and physical hardness, chemical inertness, low Z (close to human tissue, good for dosimetry), wide bandgap and an intrinsic pathway to fast neutron detection through the {sup 12}C(n,α){sup 9}Be reaction. However effective exploitation of these properties requires development of a suitable metallisation scheme to give stable contacts for high temperature applications. To best utilise available processing techniques to optimise sensor response through geometry and conversion media configurations, a reliable model is required. This must assess the performance in terms of spectral response and overall efficiency as a function of detector and converter geometry. The same is also required for proper interpretation of experimental data. Sensors have been fabricated with varying metallisation schemes indented to permit high temperature operation; Present test results indicate that viable fabrication schemes for high temperature contacts have been developed and present modelling results, supported by preliminary data from partners indicate simulations provide a useful representation of response. - Highlights: • Radiation sensors using diamond as the sensitive volume have been constructed. • Functionality of these sensors with minimal degradation has been confirmed at 100 °C. • Sensitisation to thermal neutrons by addition of conversion layers has been modelled. • Modelling suggests 4× efficiency improvements from 3d converter-substrate interfaces.

  13. New scintillating media based on liquid crystals for particle detectors

    International Nuclear Information System (INIS)

    Barnik, M.I.; Yudin, S.G.; Vasil'chenko, V.G.; Golovkin, S.V.; Medvedkov, A.M.; Solovjev, A.S.

    2000-01-01

    The study results of optical, photoluminiscent and scintillation properties of a liquid crystal 4-pentyl-4'-cyanobiphenyl are presented. The scintillation light output of this liquid crystal is about 35% of crystal anthracene, its main decay time constants are 4 and 14 ns, and the maximum of light emission spectrum is about 400 nm. The light output of a dissolution of green emitting light scintillation dopant R6 in the liquid crystal is about 120% of crystal anthracene. The light output of the frozen dissolution measured at -112 deg. C is about 2.5 times higher as observed at +20 deg. C. In the uniaxially oriented liquid crystal, the predominant intensity direction of emitted light is pointed perpendicular to the liquid crystal director and an appreciable part of the emitted light is elliptically polarized. The possibility to use scintillation properties of liquid crystals is considered both for the improvement of existing particle detector characteristics and for the creation of new gated particle detectors

  14. New scintillating media based on liquid crystals for particle detectors

    CERN Document Server

    Barnik, M I; Vasilchenko, V G; Golovkin, S V; Medvedkov, A M; Soloviev, A S

    2000-01-01

    The study results of optical, photoluminiscent and scintillation properties of a liquid crystal 4-pentyl-4'-cyanobiphenyl are presented. The scintillation light output of this liquid crystal is about 35% of crystal anthracene, its main decay time constants are 4 and 14 ns, and the maximum of light emission spectrum is about 400 nm. The light output of a dissolution of green emitting light scintillation dopant R6 in the liquid crystal is about 120% of crystal anthracene. The light output of the frozen dissolution measured at -112 deg. C is about 2.5 times higher as observed at +20 deg. C. In the uniaxially oriented liquid crystal, the predominant intensity direction of emitted light is pointed perpendicular to the liquid crystal director and an appreciable part of the emitted light is elliptically polarized. The possibility to use scintillation properties of liquid crystals is considered both for the improvement of existing particle detector characteristics and for the creation of new gated particle detectors.

  15. TORCH—a Cherenkov based time-of-flight detector

    Energy Technology Data Exchange (ETDEWEB)

    Dijk, M.W.U. van, E-mail: m.vandijk@bristol.ac.uk [H.H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Brook, N.H. [H.H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Castillo García, L. [European Organisation for Nuclear Research (CERN), CH-1211 Geneva 23 (Switzerland); Laboratory for High Energy Physics, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne (Switzerland); Cowie, E.N.; Cussans, D. [H.H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); D' Ambrosio, C. [European Organisation for Nuclear Research (CERN), CH-1211 Geneva 23 (Switzerland); Fopma, J. [Denys Wilkinson Laboratory, University of Oxford, Keble Road, Oxford OX1 3RH (United Kingdom); Forty, R.; Frei, C. [European Organisation for Nuclear Research (CERN), CH-1211 Geneva 23 (Switzerland); Gao, R. [Denys Wilkinson Laboratory, University of Oxford, Keble Road, Oxford OX1 3RH (United Kingdom); Gys, T. [European Organisation for Nuclear Research (CERN), CH-1211 Geneva 23 (Switzerland); Harnew, N.; Keri, T. [Denys Wilkinson Laboratory, University of Oxford, Keble Road, Oxford OX1 3RH (United Kingdom); Piedigrossi, D. [European Organisation for Nuclear Research (CERN), CH-1211 Geneva 23 (Switzerland)

    2014-12-01

    TORCH is an innovative high-precision time-of-flight system to provide particle identification in the difficult intermediate momentum region up to 10 GeV/c. It is also suitable for large-area applications. The detector provides a time-of-flight measurement from the imaging of Cherenkov photons emitted in a 1 cm thick quartz radiator. The photons propagate by total internal reflection to the edge of the quartz plate and are then focused onto an array of photon detectors at the periphery. A time-of-flight resolution of about 10–15 ps per incident charged particle needs to be achieved to allow a three sigma kaon-pion separation up to 10 GeV/c momentum for the TORCH located 9.5 m from the interaction point. Given ∼30 detected photons per incident charged particle, this requires measuring the time-of-arrival of individual photons to about 70 ps. This paper will describe the design of a TORCH prototype involving a number of ground-breaking and challenging techniques.

  16. Etch bias inversion during EUV mask ARC etch

    Science.gov (United States)

    Lajn, Alexander; Rolff, Haiko; Wistrom, Richard

    2017-07-01

    The introduction of EUV lithography to high volume manufacturing is now within reach for 7nm technology node and beyond (1), at least for some steps. The scheduling is in transition from long to mid-term. Thus, all contributors need to focus their efforts on the production requirements. For the photo mask industry, these requirements include the control of defectivity, CD performance and lifetime of their masks. The mask CD performance including CD uniformity, CD targeting, and CD linearity/ resolution, is predominantly determined by the photo resist performance and by the litho and etch processes. State-of-the-art chemically amplified resists exhibit an asymmetric resolution for directly and indirectly written features, which usually results in a similarly asymmetric resolution performance on the mask. This resolution gap may reach as high as multiple tens of nanometers on the mask level in dependence of the chosen processes. Depending on the printing requirements of the wafer process, a reduction or even an increase of this gap may be required. A potential way of tuning via the etch process, is to control the lateral CD contribution during etch. Aside from process tuning knobs like pressure, RF powers and gases, which usually also affect CD linearity and CD uniformity, the simplest knob is the etch time itself. An increased over etch time results in an increased CD contribution in the normal case. , We found that the etch CD contribution of ARC layer etch on EUV photo masks is reduced by longer over etch times. Moreover, this effect can be demonstrated to be present for different etch chambers and photo resists.

  17. Gamma-Free Neutron Detector Based upon Lithium Phosphate Nanoparticles

    International Nuclear Information System (INIS)

    Steven Wallace

    2007-01-01

    A gamma-free neutron-sensitive scintillator is needed to enhance radiation sensing and detection for nonproliferation applications. Such a scintillator would allow very large detectors to be placed at the perimeter of spent-fuel storage facilities at commercial nuclear power plants, so that any movement of spontaneously emitted neutrons from spent nuclear fuel or weapons grade plutonium would be noted in real-time. This task is to demonstrate that the technology for manufacturing large panels of fluor-doped plastic containing lithium-6 phosphate nanoparticles can be achieved. In order to detect neutrons, the nanoparticles must be sufficiently small so that the plastic remains transparent. In this way, the triton and alpha particles generated by the capture of the neutron will result in a photon burst that can be coupled to a wavelength shifting fiber (WLS) producing an optical signal of about ten nanoseconds duration signaling the presence of a neutron emitting source

  18. Monte Carlo based performance assessment of different animal PET architectures using pixellated CZT detectors

    International Nuclear Information System (INIS)

    Visvikis, D.; Lefevre, T.; Lamare, F.; Kontaxakis, G.; Santos, A.; Darambara, D.

    2006-01-01

    The majority of present position emission tomography (PET) animal systems are based on the coupling of high-density scintillators and light detectors. A disadvantage of these detector configurations is the compromise between image resolution, sensitivity and energy resolution. In addition, current combined imaging devices are based on simply placing back-to-back and in axial alignment different apparatus without any significant level of software or hardware integration. The use of semiconductor CdZnTe (CZT) detectors is a promising alternative to scintillators for gamma-ray imaging systems. At the same time CZT detectors have the potential properties necessary for the construction of a truly integrated imaging device (PET/SPECT/CT). The aims of this study was to assess the performance of different small animal PET scanner architectures based on CZT pixellated detectors and compare their performance with that of state of the art existing PET animal scanners. Different scanner architectures were modelled using GATE (Geant4 Application for Tomographic Emission). Particular scanner design characteristics included an overall cylindrical scanner format of 8 and 24 cm in axial and transaxial field of view, respectively, and a temporal coincidence window of 8 ns. Different individual detector modules were investigated, considering pixel pitch down to 0.625 mm and detector thickness from 1 to 5 mm. Modified NEMA NU2-2001 protocols were used in order to simulate performance based on mouse, rat and monkey imaging conditions. These protocols allowed us to directly compare the performance of the proposed geometries with the latest generation of current small animal systems. Results attained demonstrate the potential for higher NECR with CZT based scanners in comparison to scintillator based animal systems

  19. Dry etching technologies for the advanced binary film

    Science.gov (United States)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Yoshimori, Tomoaki; Azumano, Hidehito; Muto, Makoto; Nonaka, Mikio

    2011-11-01

    ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conventional photomasks and consequently reduces the semiconductor manufacturing cost [1,2,3]. Because ABF uses Ta-based films, which are different from Cr film or MoSi films commonly used for photomask, a new process is required for its etching technology. A patterning technology for ABF was established to perform the dry etching process for Ta-based films by using the knowledge gained from absorption layer etching for EUV mask that required the same Ta-film etching process [4]. Using the mask etching system ARES, which is manufactured by Shibaura Mechatronics, and its optimized etching process, a favorable CD (Critical Dimension) uniformity, a CD linearity and other etching characteristics were obtained in ABF patterning. Those results are reported here.

  20. Near midplane scintillator-based fast ion loss detector on DIII-D.

    Science.gov (United States)

    Chen, X; Fisher, R K; Pace, D C; García-Muñoz, M; Chavez, J A; Heidbrink, W W; Van Zeeland, M A

    2012-10-01

    A new scintillator-based fast-ion loss detector (FILD) installed near the outer midplane of the plasma has been commissioned on DIII-D. This detector successfully measures coherent fast ion losses produced by fast-ion driven instabilities (≤500 kHz). Combined with the first FILD at ∼45° below the outer midplane [R. K. Fisher, et al., Rev. Sci. Instrum. 81, 10D307 (2010)], the two-detector system measures poloidal variation of losses. The phase space sensitivity of the new detector (gyroradius r(L) ∼ [1.5-8] cm and pitch angle α ∼ [35°-85°]) is calibrated using neutral beam first orbit loss measurements. Since fast ion losses are localized poloidally, having two FILDs at different poloidal locations allows for the study of losses over a wider range of plasma shapes and types of loss orbits.

  1. Optimization of a bolometer detector for ITER based on Pt absorber on SiN membrane

    Energy Technology Data Exchange (ETDEWEB)

    Meister, H.; Eich, T.; Endstrasser, N.; Giannone, L.; Kannamueller, M.; Kling, A.; Koll, J.; Trautmann, T. [Max-Planck-Institut fuer Plasmaphysik, EURATOM Association, Boltzmannstr. 2, D-85748 Garching (Germany); Detemple, P.; Schmitt, S. [Institut fuer Mikrotechnik Mainz GmbH, Carl-Zeiss-Str. 18-20, D-55129 Mainz (Germany); Collaboration: ASDEX Upgrade Team

    2010-10-15

    Any plasma diagnostic in ITER must be able to operate at temperatures in excess of 200 deg. C and neutron loads corresponding to 0.1 dpa over its lifetime. To achieve this aim for the bolometer diagnostic, a miniaturized metal resistor bolometer detector based on Pt absorbers galvanically deposited on SiN membranes is being developed. The first two generations of detectors featured up to 4.5 {mu}m thick absorbers. Results from laboratory tests are presented characterizing the dependence of their calibration constants under thermal loads up to 450 deg. C. Several detectors have been tested in ASDEX Upgrade providing reliable data but also pointing out the need for further optimization. A laser trimming procedure has been implemented to reduce the mismatch in meander resistances below 1% for one detector and the thermal drifts from this mismatch.

  2. Optimization of a bolometer detector for ITER based on Pt absorber on SiN membranea)

    Science.gov (United States)

    Meister, H.; Eich, T.; Endstrasser, N.; Giannone, L.; Kannamüller, M.; Kling, A.; Koll, J.; Trautmann, T.; ASDEX Upgrade Team; Detemple, P.; Schmitt, S.

    2010-10-01

    Any plasma diagnostic in ITER must be able to operate at temperatures in excess of 200 °C and neutron loads corresponding to 0.1 dpa over its lifetime. To achieve this aim for the bolometer diagnostic, a miniaturized metal resistor bolometer detector based on Pt absorbers galvanically deposited on SiN membranes is being developed. The first two generations of detectors featured up to 4.5 μm thick absorbers. Results from laboratory tests are presented characterizing the dependence of their calibration constants under thermal loads up to 450 °C. Several detectors have been tested in ASDEX Upgrade providing reliable data but also pointing out the need for further optimization. A laser trimming procedure has been implemented to reduce the mismatch in meander resistances below 1% for one detector and the thermal drifts from this mismatch.

  3. Photovoltaic X-ray detectors based on epitaxial GaAs structures

    Energy Technology Data Exchange (ETDEWEB)

    Achmadullin, R.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Artemov, V.V. [Shubnikov Institute of Crystallography, Russian Academy of Sciences, 59 Leninski pr., Moscow B-333, 117333 (Russian Federation); Dvoryankin, V.F. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation)]. E-mail: vfd217@ire216.msk.su; Dvoryankina, G.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Dikaev, Yu.M. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakov, M.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakova, O.N. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Chmil, V.B. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Holodenko, A.G. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Kudryashov, A.A.; Krikunov, A.I.; Petrov, A.G.; Telegin, A.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Vorobiev, A.P. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation)

    2005-12-01

    A new type of the photovoltaic X-ray detector based on epitaxial p{sup +}-n-n'-n{sup +} GaAs structures which provides a high efficiency of charge collection in the non-bias operation mode at room temperature is proposed. The GaAs epitaxial structures were grown by vapor-phase epitaxy on heavily doped n{sup +}-GaAs(1 0 0) substrates. The absorption efficiency of GaAs X-ray detector is discussed. I-V and C-V characteristics of the photovoltaic X-ray detectors are analyzed. The built-in electric field profiles in the depletion region of epitaxial structures are measured by the EBIC method. Charge collection efficiency to {alpha}-particles and {gamma}-radiation are measured. The application of X-ray detectors is discussed.

  4. Numerical Investigation on Electron and Ion Transmission of GEM-based Detectors

    Science.gov (United States)

    Bhattacharya, Purba; Sahoo, Sumanya Sekhar; Biswas, Saikat; Mohanty, Bedangadas; Majumdar, Nayana; Mukhopadhyay, Supratik

    2018-02-01

    ALICE at the LHC is planning a major upgrade of its detector systems, including the TPC, to cope with an increase of the LHC luminosity after 2018. Different R&D activities are currently concentrated on the adoption of the Gas Electron Multiplier (GEM) as the gas amplification stage of the ALICE-TPC upgrade version. The major challenge is to have low ion feedback in the drift volume as well as to ensure a collection of good percentage of primary electrons in the signal generation process. In the present work, Garfield simulation framework has been adopted to numerically estimate the electron transparency and ion backflow fraction of GEM-based detectors. In this process, extensive simulations have been carried out to enrich our understanding of the complex physical processes occurring within single, triple and quadruple GEM detectors. A detailed study has been performed to observe the effect of detector geometry, field configuration and magnetic field on the above mentioned characteristics.

  5. OFDM Signal Detector Based on Cyclic Autocorrelation Function and its Properties

    Directory of Open Access Journals (Sweden)

    Z. Fedra

    2011-12-01

    Full Text Available This paper is devoted to research of the general and particular properties of the OFDM signal detector based on the cyclic autocorrelation function. The cyclic autocorrelation function is estimated using DFT. The parameters of the testing signal have been chosen according to 802.11g WLAN. Some properties are described analytically; all events are examined via computer simulations. It is shown that the detector is able to detect an OFDM signal in the case of multipath propagation, inexact frequency synchronization and without time synchronization. The sensitivity of the detector could be decreased in the above cases. An important condition for proper value of the detector sampling interval was derived. Three types of the channels were studied and compared. Detection threshold SNR=-9 dB was found for the signal under consideration and for two-way propagation.

  6. A Time-Walk Correction Method for PET Detectors Based on Leading Edge Discriminators.

    Science.gov (United States)

    Du, Junwei; Schmall, Jeffrey P; Judenhofer, Martin S; Di, Kun; Yang, Yongfeng; Cherry, Simon R

    2017-09-01

    The leading edge timing pick-off technique is the simplest timing extraction method for PET detectors. Due to the inherent time-walk of the leading edge technique, corrections should be made to improve timing resolution, especially for time-of-flight PET. Time-walk correction can be done by utilizing the relationship between the threshold crossing time and the event energy on an event by event basis. In this paper, a time-walk correction method is proposed and evaluated using timing information from two identical detectors both using leading edge discriminators. This differs from other techniques that use an external dedicated reference detector, such as a fast PMT-based detector using constant fraction techniques to pick-off timing information. In our proposed method, one detector was used as reference detector to correct the time-walk of the other detector. Time-walk in the reference detector was minimized by using events within a small energy window (508.5 - 513.5 keV). To validate this method, a coincidence detector pair was assembled using two SensL MicroFB SiPMs and two 2.5 mm × 2.5 mm × 20 mm polished LYSO crystals. Coincidence timing resolutions using different time pick-off techniques were obtained at a bias voltage of 27.5 V and a fixed temperature of 20 °C. The coincidence timing resolution without time-walk correction were 389.0 ± 12.0 ps (425 -650 keV energy window) and 670.2 ± 16.2 ps (250-750 keV energy window). The timing resolution with time-walk correction improved to 367.3 ± 0.5 ps (425 - 650 keV) and 413.7 ± 0.9 ps (250 - 750 keV). For comparison, timing resolutions were 442.8 ± 12.8 ps (425 - 650 keV) and 476.0 ± 13.0 ps (250 - 750 keV) using constant fraction techniques, and 367.3 ± 0.4 ps (425 - 650 keV) and 413.4 ± 0.9 ps (250 - 750 keV) using a reference detector based on the constant fraction technique. These results show that the proposed leading edge based time-walk correction method works well. Timing resolution obtained

  7. An Analysis of Delay-based and Integrator-based Sequence Detectors for Grid-Connected Converters

    DEFF Research Database (Denmark)

    Khazraj, Hesam; Silva, Filipe Miguel Faria da; Bak, Claus Leth

    2017-01-01

    -signal cancellation operators are the main members of the delay-based sequence detectors. The aim of this paper is to provide a theoretical and experimental comparative study between integrator and delay based sequence detectors. The theoretical analysis is conducted based on the small-signal modelling......Detecting and separating positive and negative sequence components of the grid voltage or current is of vital importance in the control of grid-connected power converters, HVDC systems, etc. To this end, several techniques have been proposed in recent years. These techniques can be broadly...... classified into two main classes: The integrator-based techniques and Delay-based techniques. The complex-coefficient filter-based technique, dual second-order generalized integrator-based method, multiple reference frame approach are the main members of the integrator-based sequence detector and the delay...

  8. A CAD based geometry model for simulation and analysis of particle detector data

    Energy Technology Data Exchange (ETDEWEB)

    Milde, Michael; Losekamm, Martin; Poeschl, Thomas; Greenwald, Daniel; Paul, Stephan [Technische Universitaet Muenchen, 85748 Garching (Germany)

    2016-07-01

    The development of a new particle detector requires a good understanding of its setup. A detailed model of the detector's geometry is not only needed during construction, but also for simulation and data analysis. To arrive at a consistent description of the detector geometry a representation is needed that can be easily implemented in different software tools used during data analysis. We developed a geometry representation based on CAD files that can be easily used within the Geant4 simulation framework and analysis tools based on the ROOT framework. This talk presents the structure of the geometry model and show its implementation using the example of the event reconstruction developed for the Multi-purpose Active-target Particle Telescope (MAPT). The detector consists of scintillating plastic fibers and can be used as a tracking detector and calorimeter with omnidirectional acceptance. To optimize the angular resolution and the energy reconstruction of measured particles, a detailed detector model is needed at all stages of the reconstruction.

  9. Flexible X-ray detector based on sliced lead iodide crystal

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Hui; Gao, Xiuying [College of Optoelectronic Technology, Chengdu University of Information Technology, Chengdu (China); Department of Materials Science, Sichuan University, Chengdu (China); Zhao, Beijun [Department of Materials Science, Sichuan University, Chengdu (China); Yang, Dingyu; Wangyang, Peihua; Zhu, Xinghua [College of Optoelectronic Technology, Chengdu University of Information Technology, Chengdu (China)

    2017-02-15

    A promising flexible X-ray detector based on inorganic semiconductor PbI{sub 2} crystal is reported. The sliced crystals mechanically cleaved from an as-grown PbI{sub 2} crystal act as the absorber directly converting the impinging X-ray photons to electron hole pairs. Due to the ductile feature of the PbI{sub 2} crystal, the detector can be operated under a highly curved state with the strain on the top surface up to 1.03% and still maintaining effective detection performance. The stable photocurrent and fast response were obtained with the detector repeated bending to a strain of 1.03% for 100 cycles. This work presents an approach for developing efficient and cost-effective PbI{sub 2}-based flexible X-ray detector. Photocurrent responses of the flexible PbI{sub 2} X-ray detector with the strain on the top surface up to 1.03% proposed in this work with the cross sectional structure and curved detector photograph as insets. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. GaN-Based Detector Enabling Technology for Next Generation Ultraviolet Planetary Missions

    Science.gov (United States)

    Aslam, S.; Gronoff, G.; Hewagama, T.; Janz, S.; Kotecki, C.

    2012-01-01

    The ternary alloy AlN-GaN-InN system provides several distinct advantages for the development of UV detectors for future planetary missions. First, (InN), (GaN) and (AlN) have direct bandgaps 0.8, 3.4 and 6.2 eV, respectively, with corresponding wavelength cutoffs of 1550 nm, 365 nm and 200 nm. Since they are miscible with each other, these nitrides form complete series of indium gallium nitride (In(sub l-x)Ga(sub x)N) and aluminum gallium nitride (Al(sub l-x)Ga(sub x)N) alloys thus allowing the development of detectors with a wavelength cut-off anywhere in this range. For the 2S0-365 nm spectral wavelength range AlGaN detectors can be designed to give a 1000x solar radiation rejection at cut-off wavelength of 325 nm, than can be achieved with Si based detectors. For tailored wavelength cut-offs in the 365-4S0 nm range, InGaN based detectors can be fabricated, which still give 20-40x better solar radiation rejection than Si based detectors. This reduced need for blocking filters greatly increases the Detective Quantum efficiency (DQE) and simplifies the instrument's optical systems. Second, the wide direct bandgap reduces the thermally generated dark current to levels allowing many observations to be performed at room temperature. Third, compared to narrow bandgap materials, wide bandgap semiconductors are significantly more radiation tolerant. Finally, with the use of an (AI, In)GaN array, the overall system cost is reduced by eliminating stringent Si CCD cooling systems. Compared to silicon, GaN based detectors have superior QE based on a direct bandgap and longer absorption lengths in the UV.

  11. Further development of a track detector as the spectrometer of linear energy transfer

    International Nuclear Information System (INIS)

    Spurny, F.; Bednar, J.; Vlcek, B.; Botollier-Depois, J.F.

    1998-01-01

    Track revealing in a track etch detector is a phenomenon related to the linear energy transfer (LET) of the particle registered. The measurements of track parameters permit to determine the LET corresponding to each revealed track, i.e. LET spectrum. We have recently developed a spectrometer of LET based on the chemically etched polyallyldiglycolcarbonate (PADC). In this contribution the results obtained with such spectrometer in some neutron fields are presented, analyzed and discussed. Several radionuclide neutron sources have been used, LET spectrometer has been also exposed in high energy neutron reference fields at CERN and JINR Dubna, and on board aircraft. (author)

  12. Edgeless silicon sensors for Medipix-based large-area X-ray imaging detectors

    International Nuclear Information System (INIS)

    Bosma, M J; Visser, J; Koffeman, E N; Evrard, O; De Moor, P; De Munck, K; Tezcan, D Sabuncuoglu

    2011-01-01

    Some X-ray imaging applications demand sensitive areas exceeding the active area of a single sensor. This requires a seamless tessellation of multiple detector modules with edgeless sensors. Our research is aimed at minimising the insensitive periphery that isolates the active area from the edge. Reduction of the edge-defect induced charge injection, caused by the deleterious effects of dicing, is an important step. We report on the electrical characterisation of 300 μm thick edgeless silicon p + -ν-n + diodes, diced using deep reactive ion etching. Sensors with both n-type and p-type stop rings were fabricated in various edge topologies. Leakage currents in the active area are compared with those of sensors with a conventional design. As expected, we observe an inverse correlation between leakage-current density and both the edge distance and stop-ring width. From this correlation we determine a minimum acceptable edge distance of 50 μm. We also conclude that structures with a p-type stop ring show lower leakage currents and higher breakdown voltages than the ones with an n-type stop ring.

  13. Optimization of silver-assisted nano-pillar etching process in silicon

    Science.gov (United States)

    Azhari, Ayu Wazira; Sopian, Kamaruzzaman; Desa, Mohd Khairunaz Mat; Zaidi, Saleem H.

    2015-12-01

    In this study, a respond surface methodology (RSM) model is developed using three-level Box-Behnken experimental design (BBD) technique. This model is developed to investigate the influence of metal-assisted chemical etching (MACE) process variables on the nanopillars profiles created in single crystalline silicon (Si) substrate. Design-Expert® software (version 7.1) is employed in formulating the RSM model based on five critical process variables: (A) concentration of silver (Ag), (B) concentration of hydrofluoric acid (HF), (C) concentration of hydrogen peroxide (H2O2), (D) deposition time, and (E) etching time. This model is supported by data from 46 experimental configurations. Etched profiles as a function of lateral etching rate, vertical etching rate, height, size and separation between the Si trenches and etching uniformity are characterized using field emission scanning electron microscope (FE-SEM). A quadratic regression model is developed to correlate critical process variables and is validated using the analysis of variance (ANOVA) methodology. The model exhibits near-linear dependence of lateral and vertical etching rates on both the H2O2 concentration and etching time. The predicted model is in good agreement with the experimental data where R2 is equal to 0.80 and 0.67 for the etching rate and lateral etching respectively. The optimized result shows minimum lateral etching with the average pore size of about 69 nm while the maximum etching rate is estimated at around 360 nm/min. The model demonstrates that the etching process uniformity is not influenced by either the etchant concentration or the etching time. This lack of uniformity could be attributed to the surface condition of the wafer. Optimization of the process parameters show adequate accuracy of the model with acceptable percentage errors of 6%, 59%, 1.8%, 38% and 61% for determination of the height, separation, size, the pore size and the etching rate respectively.

  14. What are the assets and weaknesses of HFO detectors? A benchmark framework based on realistic simulations.

    Directory of Open Access Journals (Sweden)

    Nicolas Roehri

    Full Text Available High-frequency oscillations (HFO have been suggested as biomarkers of epileptic tissues. While visual marking of these short and small oscillations is tedious and time-consuming, automatic HFO detectors have not yet met a large consensus. Even though detectors have been shown to perform well when validated against visual marking, the large number of false detections due to their lack of robustness hinder their clinical application. In this study, we developed a validation framework based on realistic and controlled simulations to quantify precisely the assets and weaknesses of current detectors. We constructed a dictionary of synthesized elements-HFOs and epileptic spikes-from different patients and brain areas by extracting these elements from the original data using discrete wavelet transform coefficients. These elements were then added to their corresponding simulated background activity (preserving patient- and region- specific spectra. We tested five existing detectors against this benchmark. Compared to other studies confronting detectors, we did not only ranked them according their performance but we investigated the reasons leading to these results. Our simulations, thanks to their realism and their variability, enabled us to highlight unreported issues of current detectors: (1 the lack of robust estimation of the background activity, (2 the underestimated impact of the 1/f spectrum, and (3 the inadequate criteria defining an HFO. We believe that our benchmark framework could be a valuable tool to translate HFOs into a clinical environment.

  15. Near Detectors based on gas TPCs for neutrino long baseline experiments

    CERN Document Server

    Blondel, A

    2017-01-01

    Time Projection Chambers have been used with success for the T2K ND280 near detector and are proposed for an upgrade of the T2K near detector. High pressure TPCs are also being considered for future long-baseline experiments like Hyper-Kamiokande and DUNE. A High Pressure TPC would be a very sensitive detector for the detailed study of neutrino-nucleus interactions, a limiting factor for extracting the ultimate precision in long baseline experiments. The requirements of TPCs for neutrino detectors are quite specific. We propose here the development of state-of-the-art near detectors based on gas TPC: atmospheric pressure TPCs for T2K-II and a high-pressure TPC for neutrino experiments. The project proposed here benefits from a strong involvement of the European (CERN) members of the T2K collaboration and beyond. It is a strongly synergetic precursor of other projects of near detectors using gas TPCs that are under discussion for the long baseline neutrino projects worldwide. It will help maintain and develop...

  16. Zinc Selenide-Based Schottky Barrier Detectors for Ultraviolet-A and Ultraviolet-B Detection

    Directory of Open Access Journals (Sweden)

    V. Naval

    2010-01-01

    Full Text Available Wide-bandgap semiconductors such as zinc selenide (ZnSe have become popular for ultraviolet (UV photodetectors due to their broad UV spectral response. Schottky barrier detectors made of ZnSe in particular have been shown to have both low dark current and high responsivity. This paper presents the results of electrical and optical characterization of UV sensors based on ZnSe/Ni Schottky diodes fabricated using single-crystal ZnSe substrate with integrated UV-A (320–400 nm and UV-B (280–320 nm filters. For comparison, characteristics characterization of an unfiltered detector is also included. The measured photoresponse showed good discrimination between the two spectral bands. The measured responsivities of the UV-A and UV-B detectors were 50 mA/W and 10 mA/W, respectively. A detector without a UV filter showed a maximum responsivity of about 110 mA/W at 375 nm wavelength. The speed of the unfiltered detector was found to be about 300 kHz primarily limited by the RC time constant determined largely by the detector area.

  17. A MAPS Based Micro-Vertex Detector for the STAR Experiment

    Science.gov (United States)

    Schambach, Joachim; Anderssen, Eric; Contin, Giacomo; Greiner, Leo; Silber, Joe; Stezelberger, Thorsten; Sun, Xiangming; Szelezniak, Michal; Videbaek, Flemming; Vu, Chinh; Wieman, Howard; Woodmansee, Sam

    For the 2014 heavy ion run of RHIC a new micro-vertex detector called the Heavy Flavor Tracker (HFT) was installed in the STAR experiment. The HFT consists of three detector subsystems with various silicon technologies arranged in 4 approximately concentric cylinders close to the STAR interaction point designed to improve the STAR detector's vertex resolution and extend its measurement capabilities in the heavy flavor domain. The two innermost HFT layers are placed at radii of 2.8 cm and 8 cm from the beam line. These layers are constructed with 400 high resolution sensors based on CMOS Monolithic Active Pixel Sensor (MAPS) technology arranged in 10-sensor ladders mounted on 10 thin carbon fiber sectors to cover a total silicon area of 0.16 m2. Each sensor of this PiXeL ("PXL") sub-detector combines a pixel array of 928 rows and 960 columns with a 20.7 μm pixel pitch together with front-end electronics and zero-suppression circuitry in one silicon die providing a sensitive area of ˜3.8 cm2. This sensor architecture features 185.6 μs readout time and 170 mW/cm2 power dissipation. This low power dissipation allows the PXL detector to be air-cooled, and with the sensors thinned down to 50 μm results in a global material budget of only 0.4% radiation length per layer. A novel mechanical approach to detector insertion allows us to effectively install and integrate the PXL sub-detector within a 12 hour period during an on-going multi-month data taking period. The detector requirements, architecture and design, as well as the performance after installation, are presented in this paper.

  18. CCD-based X-ray detectors for X-ray diffraction studies

    International Nuclear Information System (INIS)

    Ito, K.; Amemiya, Y.

    1999-01-01

    CCD-based X-ray detectors are getting to be used for X-ray diffraction studies especially in the studies where real time (automated) measurements and time-resolved measurements are required. Principles and designs of two typical types of CCD-based detectors are described; one is ths system in which x-ray image intensifiers are coupled to maximize the detective quantum efficiency for time-resolved measurements, and the other is the system in which tapered optical fibers are coupled for the reduction of the image into the CCD, which is optimized for automated measurements for protein crystallography. These CCD-based X-ray detectors have an image distortion and non-uniformity of response to be corrected by software. Correction schemes which we have developed are also described. (author)

  19. Effect of gamma irradiation on the etching properties of Lexan and Makrofol-DE polycarbonate plastics

    International Nuclear Information System (INIS)

    Ashok Kumar; Jain, R.K.; Praveen Yadav; Chakraborty, R.N.; Singh, B.K.; Nayak, B.K.

    2013-01-01

    It is observed that for Lexan and Makrofol-DE polycarbonate plastic detectors the mean diameters of fission fragments from a 252 Cf source increases as a result of gamma-ray exposure. We have studied the bulk etching rate and track etching rate before and after gamma-ray irradiation on Lexan and Makrofol-DE polycarbonate plastics. The mechanism of Lexan and Makrofol-DE polycarbonate plastic detectors can be understood with the help of this exposures. It is also noted that degree of ordering of Lexan and Makrofol-DE polycarbonate is dependent on the gamma ray dose due to degradation and cross-linking processes. The results show that bulk and track etch rate increases with gamma dose while activation energy associated with bulk and track etch rates at a particular temperature and sensitivity decreases with gamma dose. (author)

  20. Hybrid mask for deep etching

    KAUST Repository

    Ghoneim, Mohamed T.

    2017-01-01

    Deep reactive ion etching is essential for creating high aspect ratio micro-structures for microelectromechanical systems, sensors and actuators, and emerging flexible electronics. A novel hybrid dual soft/hard mask bilayer may be deposited during

  1. Operation of an InGrid based X-ray detector at the CAST experiment

    Science.gov (United States)

    Krieger, Christoph; Desch, Klaus; Kaminski, Jochen; Lupberger, Michael

    2018-02-01

    The CERN Axion Solar Telescope (CAST) is searching for axions and other particles which could be candidates for DarkMatter and even Dark Energy. These particles could be produced in the Sun and detected by a conversion into soft X-ray photons inside a strong magnetic field. In order to increase the sensitivity for physics beyond the Standard Model, detectors with a threshold below 1 keV as well as efficient background rejection methods are required to compensate for low energies and weak couplings resulting in very low detection rates. Those criteria are fulfilled by a detector utilizing the combination of a pixelized readout chip with an integrated Micromegas stage. These InGrid (Integrated Grid) devices can be build by photolithographic postprocessing techniques, resulting in a close to perfect match of grid and pixels facilitating the detection of single electrons on the chip surface. The high spatial resolution allows for energy determination by simple electron counting as well as for an event-shape based analysis as background rejection method. Tests at an X-ray generator revealed the energy threshold of an InGrid based X-ray detector to be well below the carbon Kα line at 277 eV. After the successful demonstration of the detectors key features, the detector was mounted at one of CAST's four detector stations behind an X-ray telescope in 2014. After several months of successful operation without any detector related interruptions, the InGrid based X-ray detector continues data taking at CAST in 2015. During operation at the experiment, background rates in the order of 10-5 keV-1 cm-2 s-1 have been achieved by application of a likelihood based method discriminating the non-photon background originating mostly from cosmic rays. For continued operation in 2016, an upgraded InGrid based detector is to be installed among other improvements including decoupling and sampling of the signal induced on the grid as well as a veto scintillator to further lower the

  2. Study on the performance of ZnO nanomaterial-based surface acoustic wave ultraviolet detectors

    International Nuclear Information System (INIS)

    Peng, Wenbo; He, Yongning; Zhao, Xiaolong; Liu, Han; Kang, Xue; Wen, Changbao

    2013-01-01

    A ZnO nanomaterial-based surface acoustic wave (SAW) ultraviolet (UV) detector is highly desirable for UV radiation detection due to its high sensitivity. In this work, firstly the ZnO nanomaterial-based SAW UV detectors operating at three different frequencies (∼50, ∼100 and ∼200 MHz) were fabricated. Then, four ZnO nanomaterial sensing layers with different thicknesses were synthesized on the SAW UV detectors operating at ∼200 MHz. The morphology, crystallization and photoluminescence of ZnO nanomaterial sensing layers were characterized using the scanning electron microscopy, transmission electron microscopy, x-ray diffraction and fluorescence spectrometer, respectively. The SAW UV detectors based on different operating frequencies and ZnO nanomaterial sensing layer's thicknesses were exposed under UV illumination at a wavelength of 365 nm and their UV responses were measured. The experimental results indicate that the frequency shift of ZnO nanomaterial-based SAW UV detector can be significantly improved by increasing operating frequency or ZnO nanomaterial sensing layer's thickness. Furthermore, the detectors exhibit good selectivity of UV illumination, an ultrahigh UV sensitivity of about 9.6 ppm (µW cm −2 ) −1  and fast transient properties. The experimental results agree well with the acousto-electric effect theory. What deserves to be noted is that, under a UV intensity of 150 µW cm −2 , the frequency shift of the SAW UV detector operating at ∼50 MHz with a thin ZnO nanomaterial sensing layer was only ∼50 kHz while that of the SAW UV detector operating at ∼200 MHz with a thick ZnO nanomaterial sensing layer could reach ∼292 kHz. These results suggest the huge potential applications of ultra-sensitive ZnO nanomaterial-based SAW UV detectors for remote wireless UV and radiation monitoring. (paper)

  3. Thermodynamics of nuclear track chemical etching

    Science.gov (United States)

    Rana, Mukhtar Ahmed

    2018-05-01

    This is a brief paper with new and useful scientific information on nuclear track chemical etching. Nuclear track etching is described here by using basic concepts of thermodynamics. Enthalpy, entropy and free energy parameters are considered for the nuclear track etching. The free energy of etching is determined using etching experiments of fission fragment tracks in CR-39. Relationship between the free energy and the etching temperature is explored and is found to be approximately linear. The above relationship is discussed. A simple enthalpy-entropy model of chemical etching is presented. Experimental and computational results presented here are of fundamental interest in nuclear track detection methodology.

  4. The laser calibration system for the STACEE ground-based gamma ray detector

    CERN Document Server

    Hanna, D

    2002-01-01

    We describe the design and performance of the laser system used for calibration monitoring of components of the STACEE detector. STACEE is a ground based gamma ray detector which uses the heliostats of a solar power facility to collect and focus Cherenkov light onto a system of secondary optics and photomultiplier tubes. To monitor the gain and check the linearity and timing properties of the phototubes and associated electronics, a system based on a dye laser, neutral density filters and optical fibres has been developed. In this paper we describe the system and present some results from initial tests made with it.

  5. Development of deep silicon plasma etching for 3D integration technology

    Directory of Open Access Journals (Sweden)

    Golishnikov А. А.

    2014-02-01

    Full Text Available Plasma etch process for thought-silicon via (TSV formation is one of the most important technological operations in the field of metal connections creation between stacked circuits in 3D assemble technology. TSV formation strongly depends on parameters such as Si-wafer thickness, aspect ratio, type of metallization material, etc. The authors investigate deep silicon plasma etch process for formation of TSV with controllable profile. The influence of process parameters on plasma etch rate, silicon etch selectivity to photoresist and the structure profile are researched in this paper. Technology with etch and passivation steps alternation was used as a method of deep silicon plasma etching. Experimental tool «Platrane-100» with high-density plasma reactor based on high-frequency ion source with transformer coupled plasma was used for deep silicon plasma etching. As actuation gases for deep silicon etching were chosen the following gases: SF6 was used for the etch stage and CHF3 was applied on the polymerization stage. As a result of research, the deep plasma etch process has been developed with the following parameters: silicon etch rate 6 µm/min, selectivity to photoresist 60 and structure profile 90±2°. This process provides formation of TSV 370 µm deep and about 120 µm in diameter.

  6. Fabrication of SiC nanopillars by inductively coupled SF6/O2 plasma etching

    International Nuclear Information System (INIS)

    Choi, J H; Bano, E; Latu-Romain, L; Dhalluin, F; Chevolleau, T; Baron, T

    2012-01-01

    In this paper, we demonstrate a top-down fabrication technique for nanometre scale silicon carbide (SiC) pillars using inductively coupled plasma etching. A set of experiments in SF 6 -based plasma was carried out in order to realize high aspect ratio SiC nanopillars. The etched SiC nanopillars using a small circular mask pattern (115 nm diameter) show high aspect ratio (7.4) with a height of 2.2 µm at an optimum bias voltage (300 V) and pressure (6 mTorr). Under the optimal etching conditions using a large circular mask pattern with 370 nm diameter, the obtained SiC nanopillars exhibit high anisotropy features (6.4) with a large etch depth (>7 µm). The etch characteristic of the SiC nanopillars under these conditions shows a high etch rate (550 nm min -1 ) and a high selectivity (over 60 for Ni). We also studied the etch profile of the SiC nanopillars and mask evolution over the etching time. As the mask pattern size shrinks in nanoscale, vertical and lateral mask erosion plays a crucial role in the etch profile of the SiC nanopillars. Long etching process makes the pillars appear with a hexagonal shape, coming from the crystallographic structure of α-SiC. It is found that the feature of pillars depends not only on the etching process parameters, but also on the crystallographic structure of the SiC phase. (paper)

  7. Performance evaluation of a lossy transmission lines based diode detector at cryogenic temperature.

    Science.gov (United States)

    Villa, E; Aja, B; de la Fuente, L; Artal, E

    2016-01-01

    This work is focused on the design, fabrication, and performance analysis of a square-law Schottky diode detector based on lossy transmission lines working under cryogenic temperature (15 K). The design analysis of a microwave detector, based on a planar gallium-arsenide low effective Schottky barrier height diode, is reported, which is aimed for achieving large input return loss as well as flat sensitivity versus frequency. The designed circuit demonstrates good sensitivity, as well as a good return loss in a wide bandwidth at Ka-band, at both room (300 K) and cryogenic (15 K) temperatures. A good sensitivity of 1000 mV/mW and input return loss better than 12 dB have been achieved when it works as a zero-bias Schottky diode detector at room temperature, increasing the sensitivity up to a minimum of 2200 mV/mW, with the need of a DC bias current, at cryogenic temperature.

  8. A Compton suppressed detector multiplicity trigger based digital DAQ for gamma-ray spectroscopy

    Science.gov (United States)

    Das, S.; Samanta, S.; Banik, R.; Bhattacharjee, R.; Basu, K.; Raut, R.; Ghugre, S. S.; Sinha, A. K.; Bhattacharya, S.; Imran, S.; Mukherjee, G.; Bhattacharyya, S.; Goswami, A.; Palit, R.; Tan, H.

    2018-06-01

    The development of a digitizer based pulse processing and data acquisition system for γ-ray spectroscopy with large detector arrays is presented. The system is based on 250 MHz 12-bit digitizers, and is triggered by a user chosen multiplicity of Compton suppressed detectors. The logic for trigger generation is similar to the one practised for analog (NIM/CAMAC) pulse processing electronics, while retaining the fast processing merits of the digitizer system. Codes for reduction of data acquired from the system have also been developed. The system has been tested with offline studies using radioactive sources as well as in the in-beam experiments with an array of Compton suppressed Clover detectors. The results obtained therefrom validate its use in spectroscopic efforts for nuclear structure investigations.

  9. A Divergence Median-based Geometric Detector with A Weighted Averaging Filter

    Science.gov (United States)

    Hua, Xiaoqiang; Cheng, Yongqiang; Li, Yubo; Wang, Hongqiang; Qin, Yuliang

    2018-01-01

    To overcome the performance degradation of the classical fast Fourier transform (FFT)-based constant false alarm rate detector with the limited sample data, a divergence median-based geometric detector on the Riemannian manifold of Heimitian positive definite matrices is proposed in this paper. In particular, an autocorrelation matrix is used to model the correlation of sample data. This method of the modeling can avoid the poor Doppler resolution as well as the energy spread of the Doppler filter banks result from the FFT. Moreover, a weighted averaging filter, conceived from the philosophy of the bilateral filtering in image denoising, is proposed and combined within the geometric detection framework. As the weighted averaging filter acts as the clutter suppression, the performance of the geometric detector is improved. Numerical experiments are given to validate the effectiveness of our proposed method.

  10. Characterization of LiF-based soft X-ray imaging detectors by confocal fluorescence microscopy

    International Nuclear Information System (INIS)

    Bonfigli, F; Gaudio, P; Lupelli, I; Nichelatti, E; Richetta, M; Vincenti, M A; Montereali, R M

    2010-01-01

    X-ray microscopy represents a powerful tool to obtain images of samples with very high spatial resolution. The main limitation of this technique is represented by the poor spatial resolution of standard imaging detectors. We proposed an innovative high-performance X-ray imaging detector based on the visible photoluminescence of colour centres in lithium fluoride. In this work, a confocal microscope in fluorescence mode was used to characterize LiF-based imaging detectors measuring CC integrated visible fluorescence signals of LiF crystals and films (grown on several kinds of substrates) irradiated by soft X-rays produced by a laser plasma source in different exposure conditions. The results are compared with the CC photoluminescence spectra measured on the same samples and discussed.

  11. Track-etch detection of radon in soils

    International Nuclear Information System (INIS)

    Cervantes Gonzales, P.; Gonzalez, D.

    1990-01-01

    In this work it is described the methodology to apply the track-etch technique, using detectors of nitrocellulose LR-115, for the detection of radon in soil. It is supported the use of the new detector carries and determined the parameters for revealing and counting of tracks in our conditions. It is shown in a preliminary way that this method gives better possibilities for analysis than another traditional technique to radon detection. The existence of radon was determined in the test zone. 15 refs

  12. Geometric optimization of a neutron detector based on a lithium glass–polymer composite

    Energy Technology Data Exchange (ETDEWEB)

    Mayer, M., E-mail: mike.f.mayer@gmail.com [Department of Mechanical and Nuclear Engineering, The Pennsylvania State University, University Park, PA 16802 (United States); Nattress, J. [Department of Mechanical and Nuclear Engineering, The Pennsylvania State University, University Park, PA 16802 (United States); Trivelpiece, C. [Materials Research Institute, The Pennsylvania State University, University Park, PA 16802 (United States); Jovanovic, I. [Department of Mechanical and Nuclear Engineering, The Pennsylvania State University, University Park, PA 16802 (United States)

    2015-06-01

    We report on the simulation and optimization of a neutron detector based on a glass–polymer composite that achieves high gamma rejection. Lithium glass is embedded in polyvinyltoluene in three geometric forms: disks, rods, and spheres. Optimal shape, geometric configuration, and size of the lithium glass fragments are determined using Geant4 simulations. All geometrical configurations maintain an approximate 7% glass to polymer mass ratio. Results indicate a 125-mm diameter as the optimal detector size for initial prototype design achieving a 10% efficiency for the thermalization of incident fission neutrons from {sup 252}Cf. The geometrical features of a composite detector are shown to have little effect on the intrinsic neutron efficiency, but a significant effect on the gamma rejection is observed. The sphere geometry showed the best overall performance with an intrinsic neutron efficiency of approximately 6% with a gamma rejection better than 10{sup −7} for 280-μm diameter spheres. These promising results provide a motivation for prototype composite detector development based on the simulated designs. - Highlights: • Composite polymer–lithium glass scintillation detector is simulated. • Polymer is considered to be non-scintillating in the simulation. • Three forms of lithium glass are considered: disks, rods, and spheres. • Glass shape has a small effect on neutron efficiency. • Glass shape has a significant effect on gamma rejection.

  13. Development and characterization of a neutron detector based on a lithium glass–polymer composite

    Energy Technology Data Exchange (ETDEWEB)

    Mayer, M.; Nattress, J.; Kukharev, V.; Foster, A.; Meddeb, A. [Department of Mechanical and Nuclear Engineering, The Pennsylvania State University, University Park, PA 16802 (United States); Trivelpiece, C. [Materials Research Institute, The Pennsylvania State University, University Park, PA 16802 (United States); Ounaies, Z. [Department of Mechanical and Nuclear Engineering, The Pennsylvania State University, University Park, PA 16802 (United States); Jovanovic, I., E-mail: ijovanovic@psu.edu [Department of Mechanical and Nuclear Engineering, The Pennsylvania State University, University Park, PA 16802 (United States)

    2015-06-11

    We report on the fabrication and characterization of a neutron scintillation detector based on a Li-glass–polymer composite that utilizes a combination of pulse height and pulse shape discrimination (PSD) to achieve high gamma rejection. In contrast to fast neutron detection in a PSD medium, we combine two scintillating materials that do not possess inherent neutron/gamma PSD properties to achieve effective PSD/pulse height discrimination in a composite material. Unlike recoil-based fast neutron detection, neutron/gamma discrimination can be robust even at low neutron energies due to the high Q-value neutron capture on {sup 6}Li. A cylindrical detector with a 5.05 cm diameter and 5.08 cm height was fabricated from scintillating 1 mm diameter Li-glass rods and scintillating polyvinyltoluene. The intrinsic efficiency for incident fission neutrons from {sup 252}Cf and gamma rejection of the detector were measured to be 0.33% and less than 10{sup −8}, respectively. These results demonstrate the high selectivity of the detector for neutrons and provide motivation for prototyping larger detectors optimized for specific applications, such as detection and event-by-event spectrometry of neutrons produced by fission.

  14. A new power mapping method based on ordinary kriging and determination of optimal detector location strategy

    International Nuclear Information System (INIS)

    Peng, Xingjie; Wang, Kan; Li, Qing

    2014-01-01

    Highlights: • A new power mapping method based on Ordinary Kriging (OK) is proposed. • Measurements from DayaBay Unit 1 PWR are used to verify the OK method. • The OK method performs better than the CECOR method. • An optimal neutron detector location strategy based on ordinary kriging and simulated annealing is proposed. - Abstract: The Ordinary Kriging (OK) method is presented that is designed for a core power mapping calculation of pressurized water reactors (PWRs). Measurements from DayaBay Unit 1 PWR are used to verify the accuracy of the OK method. The root mean square (RMS) reconstruction errors are kept at less than 0.35%, and the maximum reconstruction relative errors (RE) are kept at less than 1.02% for the entire operating cycle. The reconstructed assembly power distribution results show that the OK method is fit for core power distribution monitoring. The quality of power distribution obtained by the OK method is partly determined by the neutron detector locations, and the OK method is also applied to solve the optimal neutron detector location problem. The spatially averaged ordinary kriging variance (AOKV) is minimized using simulated annealing, and then, the optimal in-core neutron detector locations are obtained. The result shows that the current neutron detector location of DayaBay Unit 1 reactor is near-optimal

  15. Modelling of scintillator based flat-panel detectors with Monte-Carlo simulations

    International Nuclear Information System (INIS)

    Reims, N; Sukowski, F; Uhlmann, N

    2011-01-01

    Scintillator based flat panel detectors are state of the art in the field of industrial X-ray imaging applications. Choosing the proper system and setup parameters for the vast range of different applications can be a time consuming task, especially when developing new detector systems. Since the system behaviour cannot always be foreseen easily, Monte-Carlo (MC) simulations are keys to gain further knowledge of system components and their behaviour for different imaging conditions. In this work we used two Monte-Carlo based models to examine an indirect converting flat panel detector, specifically the Hamamatsu C9312SK. We focused on the signal generation in the scintillation layer and its influence on the spatial resolution of the whole system. The models differ significantly in their level of complexity. The first model gives a global description of the detector based on different parameters characterizing the spatial resolution. With relatively small effort a simulation model can be developed which equates the real detector regarding signal transfer. The second model allows a more detailed insight of the system. It is based on the well established cascade theory, i.e. describing the detector as a cascade of elemental gain and scattering stages, which represent the built in components and their signal transfer behaviour. In comparison to the first model the influence of single components especially the important light spread behaviour in the scintillator can be analysed in a more differentiated way. Although the implementation of the second model is more time consuming both models have in common that a relatively small amount of system manufacturer parameters are needed. The results of both models were in good agreement with the measured parameters of the real system.

  16. Boron-coated straws as a replacement for {sup 3}He-based neutron detectors

    Energy Technology Data Exchange (ETDEWEB)

    Lacy, Jeffrey L., E-mail: jlacy@proportionaltech.com [Proportional Technologies, Inc., 8022 El Rio Street, Houston, TX 77054 (United States); Athanasiades, Athanasios; Sun, Liang; Martin, Christopher S.; Lyons, Tom D.; Foss, Michael A.; Haygood, Hal B. [Proportional Technologies, Inc., 8022 El Rio Street, Houston, TX 77054 (United States)

    2011-10-01

    US and international government efforts to equip major seaports with large area neutron detectors, aimed to intercept the smuggling of nuclear materials, have precipitated a critical shortage of {sup 3}He gas. It is estimated that the annual demand of {sup 3}He for US security applications alone is more than the worldwide supply. This is strongly limiting the prospects of neutron science, safeguards, and other applications that rely heavily on {sup 3}He-based detectors. Clearly, alternate neutron detection technologies that can support large sensitive areas, and have low gamma sensitivity and low cost must be developed. We propose a low-cost technology based on long copper tubes (straws), coated on the inside with a thin layer of {sup 10}B-enriched boron carbide ({sup 10}B{sub 4}C). In addition to the high abundance of boron on Earth and low cost of {sup 10}B enrichment, the boron-coated straw (BCS) detector offers distinct advantages over conventional {sup 3}He-based detectors, and alternate technologies such as {sup 10}BF{sub 3} tubes and {sup 10}B-coated rigid tubes. These include better distribution inside moderator assemblies, many-times faster electronic signals, no pressurization, improved gamma-ray rejection, no toxic or flammable gases, and ease of serviceability. We present the performance of BCS detectors dispersed in a solid plastic moderator to address the need for portal monitoring. The design adopts the outer dimensions of currently deployed {sup 3}He-based monitors, but takes advantage of the small BCS diameter to achieve a more uniform distribution of neutron converter throughout the moderating material. We show that approximately 63 BCS detectors, each 205 cm long, distributed inside the moderator, can match or exceed the detection efficiency of typical monitors fitted with a 5 cm diameter {sup 3}He tube, 187 cm long, pressurized to 3 atm.

  17. Boron-coated straws as a replacement for 3He-based neutron detectors

    International Nuclear Information System (INIS)

    Lacy, Jeffrey L.; Athanasiades, Athanasios; Sun, Liang; Martin, Christopher S.; Lyons, Tom D.; Foss, Michael A.; Haygood, Hal B.

    2011-01-01

    US and international government efforts to equip major seaports with large area neutron detectors, aimed to intercept the smuggling of nuclear materials, have precipitated a critical shortage of 3 He gas. It is estimated that the annual demand of 3 He for US security applications alone is more than the worldwide supply. This is strongly limiting the prospects of neutron science, safeguards, and other applications that rely heavily on 3 He-based detectors. Clearly, alternate neutron detection technologies that can support large sensitive areas, and have low gamma sensitivity and low cost must be developed. We propose a low-cost technology based on long copper tubes (straws), coated on the inside with a thin layer of 10 B-enriched boron carbide ( 10 B 4 C). In addition to the high abundance of boron on Earth and low cost of 10 B enrichment, the boron-coated straw (BCS) detector offers distinct advantages over conventional 3 He-based detectors, and alternate technologies such as 10 BF 3 tubes and 10 B-coated rigid tubes. These include better distribution inside moderator assemblies, many-times faster electronic signals, no pressurization, improved gamma-ray rejection, no toxic or flammable gases, and ease of serviceability. We present the performance of BCS detectors dispersed in a solid plastic moderator to address the need for portal monitoring. The design adopts the outer dimensions of currently deployed 3 He-based monitors, but takes advantage of the small BCS diameter to achieve a more uniform distribution of neutron converter throughout the moderating material. We show that approximately 63 BCS detectors, each 205 cm long, distributed inside the moderator, can match or exceed the detection efficiency of typical monitors fitted with a 5 cm diameter 3 He tube, 187 cm long, pressurized to 3 atm.

  18. Boron-coated straws as a replacement for 3He-based neutron detectors

    Science.gov (United States)

    Lacy, Jeffrey L.; Athanasiades, Athanasios; Sun, Liang; Martin, Christopher S.; Lyons, Tom D.; Foss, Michael A.; Haygood, Hal B.

    2011-10-01

    US and international government efforts to equip major seaports with large area neutron detectors, aimed to intercept the smuggling of nuclear materials, have precipitated a critical shortage of 3He gas. It is estimated that the annual demand of 3He for US security applications alone is more than the worldwide supply. This is strongly limiting the prospects of neutron science, safeguards, and other applications that rely heavily on 3He-based detectors. Clearly, alternate neutron detection technologies that can support large sensitive areas, and have low gamma sensitivity and low cost must be developed. We propose a low-cost technology based on long copper tubes (straws), coated on the inside with a thin layer of 10B-enriched boron carbide ( 10B 4C). In addition to the high abundance of boron on Earth and low cost of 10B enrichment, the boron-coated straw (BCS) detector offers distinct advantages over conventional 3He-based detectors, and alternate technologies such as 10BF 3 tubes and 10B-coated rigid tubes. These include better distribution inside moderator assemblies, many-times faster electronic signals, no pressurization, improved gamma-ray rejection, no toxic or flammable gases, and ease of serviceability. We present the performance of BCS detectors dispersed in a solid plastic moderator to address the need for portal monitoring. The design adopts the outer dimensions of currently deployed 3He-based monitors, but takes advantage of the small BCS diameter to achieve a more uniform distribution of neutron converter throughout the moderating material. We show that approximately 63 BCS detectors, each 205 cm long, distributed inside the moderator, can match or exceed the detection efficiency of typical monitors fitted with a 5 cm diameter 3He tube, 187 cm long, pressurized to 3 atm.

  19. Development of GAGG depth-of-interaction (DOI) block detectors based on pulse shape analysis

    International Nuclear Information System (INIS)

    Yamamoto, Seiichi; Kobayashi, Takahiro; Yeol Yeom, Jung; Morishita, Yuki; Sato, Hiroki; Endo, Takanori; Usuki, Yoshiyuki; Kamada, Kei; Yoshikawa, Akira

    2014-01-01

    A depth-of-interaction (DOI) detector is required for developing a high resolution and high sensitivity PET system. Ce-doped Gd 3 Al 2 Ga 3 O 12 (GAGG fast: GAGG-F) is a promising scintillator for PET applications with high light output, no natural radioisotope and suitable light emission wavelength for semiconductor based photodetectors. However, no DOI detector based on pulse shape analysis with GAGG-F has been developed to date, due to the lack of appropriate scintillators of pairing. Recently a new variation of this scintillator with different Al/Ga ratios—Ce-doped Gd 3 Al 2.6 Ga 2.4 O 12 (GAGG slow: GAGG-S), which has slower decay time was developed. The combination of GAGG-F and GAGG-S may allow us to realize high resolution DOI detectors based on pulse shape analysis. We developed and tested two GAGG phoswich DOI block detectors comprised of pixelated GAGG-F and GAGG-S scintillation crystals. One phoswich block detector comprised of 2×2×5 mm pixel that were assembled into a 5×5 matrix. The DOI block was optically coupled to a silicon photomultiplier (Si-PM) array (Hamamatsu MPPC S11064-050P) with a 2-mm thick light guide. The other phoswich block detector comprised of 0.5×0.5×5 mm (GAGG-F) and 0.5×0.5×6 mm 3 (GAGG-S) pixels that were assembled into a 20×20 matrix. The DOI block was also optically coupled to the same Si-PM array with a 2-mm thick light guide. In the block detector of 2-mm crystal pixels (5×5 matrix), the 2-dimensional histogram revealed excellent separation with an average energy resolution of 14.1% for 662-keV gamma photons. The pulse shape spectrum displayed good separation with a peak-to-valley ratio of 8.7. In the block detector that used 0.5-mm crystal pixels (20×20 matrix), the 2-dimensional histogram also showed good separation with energy resolution of 27.5% for the 662-keV gamma photons. The pulse shape spectrum displayed good separation with a peak-to-valley ratio of 6.5. These results indicate that phoswich DOI

  20. Strong temperature effect on X-ray photo-etching of polytetrafluoroethylene using a 10Hz laser-plasma radiation source based on a gas puff target

    Czech Academy of Sciences Publication Activity Database

    Bartnik, A.; Fiedorowicz, H.; Jarocki, R.; Juha, Libor; Kostecki, J.; Rakowski, R.; Szczurek, M.

    2006-01-01

    Roč. 82, - (2006), s. 529-532 ISSN 0946-2171 R&D Projects: GA MŠk(CZ) LC510 Grant - others:Ministery of Scientific Research(PL) 3 T08C 002 27 Institutional research plan: CEZ:AV0Z10100523 Keywords : photo-etching * organic polymers * laser-produced plasmas Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.023, year: 2006

  1. Temperature-referenced high-sensitivity point-probe optical fiber chem-sensors based on cladding etched fiber Bragg gratings

    OpenAIRE

    Zhou, Kaiming; Chen, Xianfeng F.; Zhang, Lin; Bennion, Ian

    2004-01-01

    Point-probe optical fiber chem-sensors have been implemented using cladding etched fiber Bragg gratings. The sensors possess refractive index sensing capability that can be utilized to measure chemical concentrations. The Bragg wavelength shift reaches 8 nm when the index of surrounding medium changes from 1.33 to 1.44, giving maximum sensitivity more than 10 times higher than that of previously reported devices. More importantly, the dual-grating configuration of the point-probe sensors offe...

  2. UBO Detector - A cluster-based, fully automated pipeline for extracting white matter hyperintensities.

    Science.gov (United States)

    Jiang, Jiyang; Liu, Tao; Zhu, Wanlin; Koncz, Rebecca; Liu, Hao; Lee, Teresa; Sachdev, Perminder S; Wen, Wei

    2018-07-01

    We present 'UBO Detector', a cluster-based, fully automated pipeline for extracting and calculating variables for regions of white matter hyperintensities (WMH) (available for download at https://cheba.unsw.edu.au/group/neuroimaging-pipeline). It takes T1-weighted and fluid attenuated inversion recovery (FLAIR) scans as input, and SPM12 and FSL functions are utilised for pre-processing. The candidate clusters are then generated by FMRIB's Automated Segmentation Tool (FAST). A supervised machine learning algorithm, k-nearest neighbor (k-NN), is applied to determine whether the candidate clusters are WMH or non-WMH. UBO Detector generates both image and text (volumes and the number of WMH clusters) outputs for whole brain, periventricular, deep, and lobar WMH, as well as WMH in arterial territories. The computation time for each brain is approximately 15 min. We validated the performance of UBO Detector by showing a) high segmentation (similarity index (SI) = 0.848) and volumetric (intraclass correlation coefficient (ICC) = 0.985) agreement between the UBO Detector-derived and manually traced WMH; b) highly correlated (r 2  > 0.9) and a steady increase of WMH volumes over time; and c) significant associations of periventricular (t = 22.591, p deep (t = 14.523, p < 0.001) WMH volumes generated by UBO Detector with Fazekas rating scores. With parallel computing enabled in UBO Detector, the processing can take advantage of multi-core CPU's that are commonly available on workstations. In conclusion, UBO Detector is a reliable, efficient and fully automated WMH segmentation pipeline. Copyright © 2018 Elsevier Inc. All rights reserved.

  3. Morphological Evaluation of the Adhesive/Enamel interfaces of Two-step Self-etching Adhesives and Multimode One-bottle Self-etching Adhesives.

    Science.gov (United States)

    Sato, Takaaki; Takagaki, Tomohiro; Matsui, Naoko; Hamba, Hidenori; Sadr, Alireza; Nikaido, Toru; Tagami, Junji

    To evaluate the acid-base resistant zone (ABRZ) at the adhesive/enamel interface of self-etching adhesives with or without prior phosphoric acid etching. Four adhesives were used in 8 groups: Clearfil SE Bond (SEB), Optibond XTR (XTR), Scotchbond Universal Adhesive (SBU), and Clearfil BOND SE ONE (ONE) without prior phosphoric-acid etching, and each adhesive with phosphoric acid etching for 10 s (P-SEB, P-XTR, P-SBU and P-ONE, respectively). After application of self-etching adhesives on ground enamel surfaces of human teeth, a flowable composite was placed. For observation of the acid-base resistant zone (ABRZ), the bonded interface was exposed to demineralizing solution (pH 4.5) for 4.5 h, followed by 5% NaOCl with ultrasonication for 20 min. After the acid-base challenge, morphological attributes of the interface were observed using SEM. ABRZ formation was confirmed in all groups. The funnel-shaped erosion beneath the interface was present in SBU and ONE, where nearly 10 to 15 μm of enamel was dissolved. With phosphoric acid etching, the ABRZs were obviously thicker compared with no phosphoric acid etching. Enamel beneath the bonding interface was more susceptible to acid dissolution in SBU and ONE. In the case of the one-bottle self-etching adhesives and universal adhesives that intrinsically have higher pH values, enamel etching should be recommended to improve the interfacial quality.

  4. Development of an angled Si-PM-based detector unit for positron emission mammography (PEM) system

    Energy Technology Data Exchange (ETDEWEB)

    Nakanishi, Kouhei, E-mail: nakanishi.kouhei@c.mbox.nagoya-u.ac.jp; Yamamoto, Seiichi

    2016-11-21

    Positron emission mammography (PEM) systems have higher sensitivity than clinical whole body PET systems because they have a smaller ring diameter. However, the spatial resolution of PEM systems is not high enough to detect early stage breast cancer. To solve this problem, we developed a silicon photomultiplier (Si-PM) based detector unit for the development of a PEM system. Since a Si-PM's channel is small, Si-PM can resolve small scintillator pixels to improve the spatial resolution. Also Si-PM based detectors have inherently high timing resolution and are able to reduce the random coincidence events by reducing the time window. We used 1.5×1.9×15 mm LGSO scintillation pixels and arranged them in an 8×24 matrix to form scintillator blocks. Four scintillator blocks were optically coupled to Si-PM arrays with an angled light guide to form a detector unit. Since the light guide has angles of 5.625°, we can arrange 64 scintillator blocks in a nearly circular shape (a regular 64-sided polygon) using 16 detector units. We clearly resolved the pixels of the scintillator blocks in a 2-dimensional position histogram where the averages of the peak-to-valley ratios (P/Vs) were 3.7±0.3 and 5.7±0.8 in the transverse and axial directions, respectively. The average energy resolution was 14.2±2.1% full-width at half-maximum (FWHM). By including the temperature dependent gain control electronics, the photo-peak channel shifts were controlled within ±1.5% with the temperature from 23 °C to 28 °C. With these results, in addition to the potential high timing performance of Si-PM based detectors, our developed detector unit is promising for the development of a high-resolution PEM system.

  5. Formation of plasma induced surface damage in silica glass etching for optical waveguides

    International Nuclear Information System (INIS)

    Choi, D.Y.; Lee, J.H.; Kim, D.S.; Jung, S.T.

    2004-01-01

    Ge, B, P-doped silica glass films are widely used as optical waveguides because of their low losses and inherent compatibility with silica optical fibers. These films were etched by ICP (inductively coupled plasma) with chrome etch masks, which were patterned by reactive ion etching (RIE) using chlorine-based gases. In some cases, the etched surfaces of silica glass were very rough (root-mean square roughness greater than 100 nm) and we call this phenomenon plasma induced surface damage (PISD). Rough surface cannot be used as a platform for hybrid integration because of difficulty in alignment and bonding of active devices. PISD reduces the etch rate of glass and it is very difficult to remove residues on a rough surface. The objective of this study is to elucidate the mechanism of PISD formation. To achieve this goal, PISD formation during different etching conditions of chrome etch mask and silica glass was investigated. In most cases, PISD sources are formed on a glass surface after chrome etching, and metal compounds are identified in theses sources. Water rinse after chrome etching reduces the PISD, due to the water solubility of metal chlorides. PISD is decreased or even disappeared at high power and/or low pressure in glass etching, even if PISD sources were present on the glass surface before etching. In conclusion, PISD sources come from the chrome etching process, and polymer deposition on these sources during the silica etching cause the PISD sources to grow. In the area close to the PISD source there is a higher ion flux, which causes an increase in the etch rate, and results in the formation of a pit

  6. Artificial neural network based pulse-shape analysis for cryogenic detectors operated in CRESST-II

    Energy Technology Data Exchange (ETDEWEB)

    Zoeller, Andreas [Physik-Department and Excellence Cluster Universe, Technische Universitaet Muenchen, D-85747 Garching (Germany); Collaboration: CRESST-Collaboration

    2016-07-01

    In this talk we report on results of a pulse-shape analysis of cryogenic detectors based on artificial neural networks. To train the neural network a large amount of pulses with known properties are necessary. Therefore, a data-driven simulation used to generate these sets will be explained. The presented analysis shows an excellent discrimination performance even down to the energy threshold. The method is applied to several detectors, among them is the module with the lowest threshold (307eV) operated in CRESST-II phase 2. The performed blind analysis of this module confirms the substantially enhanced sensitivity for light dark matter published in 2015.

  7. Laser and alpha particle characterization of floating-base BJT detector

    International Nuclear Information System (INIS)

    Tyzhnevyi, V.; Batignani, G.; Bosisio, L.; Dalla Betta, G.-F.; Verzellesi, G.; Zorzi, N.

    2010-01-01

    In this work, we investigate the detection properties of existing prototypes of BJT detectors operated with floating base. We report about results of two functional tests. The charge-collection properties of BJT detectors were evaluated by means of a pulsed laser setup. The response to α-particles emitted from radioactive 241 Am source are also presented. Experimental results show that current gains of about 450 with response times in the order of 50 μs are preserved even in this non-standard operation mode, in spite of a non-optimized structure.

  8. Laser and alpha particle characterization of floating-base BJT detector

    Energy Technology Data Exchange (ETDEWEB)

    Tyzhnevyi, V., E-mail: tyzhnevyi@disi.unitn.i [Universita di Trento and INFN Trento, Trento (Italy); Batignani, G. [Dipartimento di Fisica, Universita di Pisa and INFN Pisa, Pisa (Italy); Bosisio, L. [Dipartimento di Fisica, Universita di Trieste and INFN Trieste, Trieste (Italy); Dalla Betta, G.-F. [Universita di Trento and INFN Trento, Trento (Italy); Verzellesi, G. [Universita di Modena e Reggio Emilia and INFN Trento, Reggio Emilia (Italy); Zorzi, N. [Fondazione Bruno Kessler (FBK), Trento (Italy)

    2010-05-21

    In this work, we investigate the detection properties of existing prototypes of BJT detectors operated with floating base. We report about results of two functional tests. The charge-collection properties of BJT detectors were evaluated by means of a pulsed laser setup. The response to {alpha}-particles emitted from radioactive {sup 241}Am source are also presented. Experimental results show that current gains of about 450 with response times in the order of 50 {mu}s are preserved even in this non-standard operation mode, in spite of a non-optimized structure.

  9. On a Three-Channel Cosmic Ray Detector based on Aluminum Blocks

    Science.gov (United States)

    Arceo, L.; Félix, J.

    2017-10-01

    There are many general purpose cosmic ray detectors based on plastic scintillators and electronic boards from the market. This is a new cosmic ray detector designed on three 2.54 cm × 5.08 cm × 20.32 cm Aluminum blocks in stack arrangement, and three Hamamatsu S12572-100P photodiodes. The photodiode board, the passive electronic board, and the discriminator board are own designed. The electronic signals are stored with a CompactRIO -cRIO- by National Instruments. It is presented the design, the construction, the data acquisition system algorithm, and the preliminary physical results.

  10. PixTrig: a Level 2 track finding algorithm based on pixel detector

    CERN Document Server

    Baratella, A; Morettini, P; Parodi, F

    2000-01-01

    This note describes an algorithm for track search at Level 2 based on pixel detector. Using three pixel clusters we can produce a reconstruction of the track parameter in both z and R-phi plane. These track segments can be used as seed for more sophisticated track finding algorithms or used directly, especially when impact parameter resolution is crucial. The algorithm efficiency is close to 90% for pt > 1 GeV/c and the processing time is small enough to allow a complete detector reconstruction (non RoI guided) within the Level 2 processing.

  11. Overview and outlook on muon survey tomography based on micromegas detectors for unreachable sites technology

    Directory of Open Access Journals (Sweden)

    Roche I. Lázaro

    2016-01-01

    Full Text Available The present document describes the functioning principles of the Muon Survey Tomography based on Micromegas detectors for Unreachable Sites Technology and its distinguishing features from other Micromegas-like detectors. Additionally, it addresses the challenges found while operating the first generation and the resulting improvements. Currently, the project Temporal Tomography of the Densitometry by the Measurement of Muons is focused on obtaining a reliable pulse from the micromesh, associated to the passing of a muon, in order to trigger the acquisition and operate in standalone mode. An outlook of the future steps of the project is provided as well.

  12. Modeling of radiation damage recovery in particle detectors based on GaN

    Energy Technology Data Exchange (ETDEWEB)

    Gaubas, E., E-mail: eugenijus.gaubas@ff.vu.lt; Ceponis, T.; Pavlov, J.

    2015-12-15

    The pulsed characteristics of the capacitor-type and PIN diode type detectors based on GaN have been simulated using the dynamic and drift–diffusion models. The drift–diffusion current simulations have been implemented by employing the commercial software package Synopsys TCAD Sentaurus. The bipolar drift regime has been analyzed. The possible internal gain in charge collection through carrier multiplication processes determined by impact ionization has been considered in order to compensate carrier lifetime reduction due to radiation defects introduced into GaN material of detector.

  13. Bond strength with various etching times on young permanent teeth

    Energy Technology Data Exchange (ETDEWEB)

    Wang, W.N.; Lu, T.C. (School of Dentistry, National Defense Medical Center, Taipei, Taiwan (China))

    1991-07-01

    Tensile bond strengths of an orthodontic resin cement were compared for 15-, 30-, 60-, 90-, or 120-second etching times, with a 37% phosphoric acid solution on the enamel surfaces of young permanent teeth. Fifty extracted premolars from 9- to 16-year-old children were used for testing. An orthodontic composite resin was used to bond the bracket directly onto the buccal surface of the enamel. The tensile bond strengths were tested with an Instron machine. Bond failure interfaces between bracket bases and teeth surfaces were examined with a scanning electron microscope and calculated with mapping of energy-dispersive x-ray spectrometry. The results of tensile bond strength for 15-, 30-, 60-, or 90-second etching times were not statistically different. For the 120-second etching time, the decrease was significant. Of the bond failures, 43%-49% occurred between bracket and resin interface, 12% to 24% within the resin itself, 32%-40% between resin and tooth interface, and 0% to 4% contained enamel fragments. There was no statistical difference in percentage of bond failure interface distribution between bracket base and resin, resin and enamel, or the enamel detachment. Cohesive failure within the resin itself at the 120-second etching time was less than at other etching times, with a statistical significance. To achieve good retention, to decrease enamel loss, and to reduce moisture contamination in the clinic, as well as to save chairside time, a 15-second etching time is suggested for teenage orthodontic patients.

  14. Mixed ionic-electronic conductor-based radiation detectors and methods of fabrication

    Science.gov (United States)

    Conway, Adam; Beck, Patrick R; Graff, Robert T; Nelson, Art; Nikolic, Rebecca J; Payne, Stephen A; Voss, Lars; Kim, Hadong

    2015-04-07

    A method of fabricating a mixed ionic-electronic conductor (e.g. TlBr)-based radiation detector having halide-treated surfaces and associated methods of fabrication, which controls polarization of the mixed ionic-electronic MIEC material to improve stability and operational lifetime.

  15. Spectrometer based on the silicon semiconductor detectors for a study of the two charged particles correlation

    International Nuclear Information System (INIS)

    Krumsztein, Z.W.; Siemiarczuk, T.; Szawlowski, M.

    1974-01-01

    The spectrometer based on the silicon semiconductor detectors for a study of the correlation between two charged particles is described. The results of the time resolution and particles identification measurements are presented. The tests were performed in the proton beam of the JINR synchrocyclotron. (author)

  16. The development of drift-strip detectors based on CdZnTe

    DEFF Research Database (Denmark)

    Gostilo, V.; Budtz-Jørgensen, Carl; Kuvvetli, Irfan

    2002-01-01

    The design and technological development of a CdZnTe drift strip detector is described. The device is based on a monocrystal of dimensions 10 x 10 x 3 mm(3) and has a pitch of 200 mum and a strip width of 100 mum. The strip length is 9.5 mm. The distribution of the leakage currents of the strips...

  17. Evolution of Some Particle Detectors Based On the Discharge in Gases

    Science.gov (United States)

    Charpak, G.

    1969-11-19

    Summary of the properties of some of the detectors that are commonly used in counter experiments to localize charged particles, and which are based on discharge in gases under the influence of electric fields and some basic facts of gaseous amplification in homogeneous and inhomogeneous fields.

  18. Stilbene crystalline powder in polymer base as a new fast neutron detector

    International Nuclear Information System (INIS)

    Budakovsky, S.V.; Galunov, N.Z.; Grinyov, B.V.; Karavaeva, N.L.; Kyung Kim, Jong; Kim, Yong-Kyun; Pogorelova, N.V.; Tarasenko, O.A.

    2007-01-01

    A new organic scintillation material consisting of stilbene grains in a polymer glue base is presented. The crystalline grains of stilbene are obtained by mechanical grinding of stilbene single crystals. The resulting composite scintillators have been studied as detectors for fast neutrons

  19. BPM Electronics based on Compensated Diode Detectors – Results from development Systems

    CERN Document Server

    Gasior, M; Steinhagen, RJ

    2012-01-01

    High resolution beam position monitor (BPM) electronics based on diode peak detectors is being developed for processing signals from button BPMs embedded into future LHC collimators. Its prototypes were measured in a laboratory as well as with beam signals from the collimator BPM installed on the SPS and with LHC BPMs. Results from these measurements are presented and discussed.

  20. Improvement of an X-ray imaging detector based on a scintillating guides screen

    CERN Document Server

    Badel, X; Linnros, J; Kleimann, P; Froejdh, C; Petersson, C S

    2002-01-01

    An X-ray imaging detector has been developed for dental applications. The principle of this detector is based on application of a silicon charge coupled device covered by a scintillating wave-guide screen. Previous studies of such a detector showed promising results concerning the spatial resolution but low performance in terms of signal to noise ratio (SNR) and sensitivity. Recent results confirm the wave-guiding properties of the matrix and show improvement of the detector in terms of response uniformity, sensitivity and SNR. The present study is focussed on the fabrication of the scintillating screen where the principal idea is to fill a matrix of Si pores with a CsI scintillator. The photoluminescence technique was used to prove the wave-guiding property of the matrix and to inspect the filling uniformity of the pores. The final detector was characterized by X-ray evaluation in terms of spatial resolution, light output and SNR. A sensor with a spatial resolution of 9 LP/mm and a SNR over 50 has been achie...

  1. LUCID A Cherenkov Tube Based Detector for Monitoring the ATLAS Experiment Luminosity

    CERN Document Server

    Sbrizzi, A

    2007-01-01

    The LUCID (LUminosity Cherenkov Integrating Detector) apparatus is composed by two symmetric arms deployed at about 17 m from the ATLAS interaction point. The purpose of this detector, which will be installed in january 2008, is to monitor the luminosity delivered by the LHC machine to the ATLAS experiment. An absolute luminosity calibration is needed and it will be provided by a Roman Pot type detector with the two arms placed at about 240 m from the interaction point. Each arm of the LUCID detector is based on an aluminum vessel containing 20 Cherenkov tubes, 15 mm diameter and 1500 mm length, filled with C4F10 radiator gas at 1.5 bar. The Cherenkov light generated by charged particles above the threshold is collected by photomultiplier tubes (PMT) directly placed at the tubes end. The challenging aspect of this detector is its readout in an environment characterized by the high dose of radiation (about 0.7 Mrad/year at 10^33cm^2 s^-1) it must withstand. In order to fulfill these radiation hardness requirem...

  2. Design and implementation of an XML based object-oriented detector description database for CMS

    International Nuclear Information System (INIS)

    Liendl, M.

    2003-04-01

    This thesis deals with the development of a detector description database (DDD) for the compact muon solenoid (CMS) experiment at the large hadron collider (LHC) located at the European organization for nuclear research (CERN). DDD is a fundamental part of the CMS offline software with its main applications, simulation and reconstruction. Both are in need of different models of the detector in order to efficiently solve their specific tasks. In the thesis the requirements to a detector description database are analyzed and the chosen solution is described in detail. It comprises the following components: an XML based detector description language, a runtime system that implements an object-oriented transient representation of the detector, and an application programming interface to be used by client applications. One of the main aspects of the development is the design of the DDD components. The starting point is a domain model capturing concisely the characteristics of the problem domain. The domain model is transformed into several implementation models according to the guidelines of the model driven architecture (MDA). Implementation models and appropriate refinements thereof are foundation for adequate implementations. Using the MDA approach, a fully functional prototype was realized in C++ and XML. The prototype was successfully tested through seamless integration into both the simulation and the reconstruction framework of CMS. (author)

  3. Poster - 20: Detector selection for commissioning of a Monte Carlo based electron dose calculation algorithm

    Energy Technology Data Exchange (ETDEWEB)

    Anusionwu, Princess [Medical Physics, CancerCare Manitoba, Winnipeg Canada (Canada); Department of Physics & Astronomy, University of Manitoba, Winnipeg Canada (Canada); Alpuche Aviles, Jorge E. [Medical Physics, CancerCare Manitoba, Winnipeg Canada (Canada); Pistorius, Stephen [Medical Physics, CancerCare Manitoba, Winnipeg Canada (Canada); Department of Physics & Astronomy, University of Manitoba, Winnipeg Canada (Canada); Department of Radiology, University of Manitoba, Winnipeg (Canada)

    2016-08-15

    Objective: Commissioning of a Monte Carlo based electron dose calculation algorithm requires percentage depth doses (PDDs) and beam profiles which can be measured with multiple detectors. Electron dosimetry is commonly performed with cylindrical chambers but parallel plate chambers and diodes can also be used. The purpose of this study was to determine the most appropriate detector to perform the commissioning measurements. Methods: PDDs and beam profiles were measured for beams with energies ranging from 6 MeV to 15 MeV and field sizes ranging from 6 cm × 6 cm to 40 cm × 40 cm. Detectors used included diodes, cylindrical and parallel plate ionization chambers. Beam profiles were measured in water (100 cm source to surface distance) and in air (95 cm source to detector distance). Results: PDDs for the cylindrical chambers were shallower (1.3 mm averaged over all energies and field sizes) than those measured with the parallel plate chambers and diodes. Surface doses measured with the diode and cylindrical chamber were on average larger by 1.6 % and 3% respectively than those of the parallel plate chamber. Profiles measured with a diode resulted in penumbra values smaller than those measured with the cylindrical chamber by 2 mm. Conclusion: The diode was selected as the most appropriate detector since PDDs agreed with those measured with parallel plate chambers (typically recommended for low energies) and results in sharper profiles. Unlike ion chambers, no corrections are needed to measure PDDs, making it more convenient to use.

  4. Absolute efficiency calibration of 6LiF-based solid state thermal neutron detectors

    Science.gov (United States)

    Finocchiaro, Paolo; Cosentino, Luigi; Lo Meo, Sergio; Nolte, Ralf; Radeck, Desiree

    2018-03-01

    The demand for new thermal neutron detectors as an alternative to 3He tubes in research, industrial, safety and homeland security applications, is growing. These needs have triggered research and development activities about new generations of thermal neutron detectors, characterized by reasonable efficiency and gamma rejection comparable to 3He tubes. In this paper we show the state of the art of a promising low-cost technique, based on commercial solid state silicon detectors coupled with thin neutron converter layers of 6LiF deposited onto carbon fiber substrates. A few configurations were studied with the GEANT4 simulation code, and the intrinsic efficiency of the corresponding detectors was calibrated at the PTB Thermal Neutron Calibration Facility. The results show that the measured intrinsic detection efficiency is well reproduced by the simulations, therefore validating the simulation tool in view of new designs. These neutron detectors have also been tested at neutron beam facilities like ISIS (Rutherford Appleton Laboratory, UK) and n_TOF (CERN) where a few samples are already in operation for beam flux and 2D profile measurements. Forthcoming applications are foreseen for the online monitoring of spent nuclear fuel casks in interim storage sites.

  5. First Compton telescope prototype based on continuous LaBr3-SiPM detectors

    International Nuclear Information System (INIS)

    Llosá, G.; Cabello, J.; Callier, S.; Gillam, J.E.; Lacasta, C.; Rafecas, M.; Raux, L.; Solaz, C.; Stankova, V.; La Taille, C. de; Trovato, M.; Barrio, J.

    2013-01-01

    A first prototype of a Compton camera based on continuous scintillator crystals coupled to silicon photomultiplier (SiPM) arrays has been successfully developed and operated. The prototype is made of two detector planes. The first detector is made of a continuous 16×18×5 mm 3 LaBr 3 crystal coupled to a 16-elements SiPM array. The elements have a size of 3×3 mm 3 in a 4.5×4.05 mm 2 pitch. The second detector, selected by availability, consists of a continuous 16×18×5 mm 3 LYSO crystal coupled to a similar SiPM array. The SPIROC1 ASIC is employed in the readout electronics. Data have been taken with a 22 Na source placed at different positions and images have been reconstructed with the simulated one-pass list-mode (SOPL) algorithm. Detector development for the construction of a second prototype with three detector planes is underway. LaBr 3 crystals of 32×36 mm 2 size and 5/10 mm thickness have been acquired and tested with a PMT. The resolution obtained is 3.5% FWHM at 511 keV. Each crystal will be coupled to four MPPC arrays. Different options are being tested for the prototype readout

  6. Assembling and Using an LED-Based Detector to Monitor Absorbance Changes during Acid-Base Titrations

    Science.gov (United States)

    Santos, Willy G.; Cavalheiro, E´der T. G.

    2015-01-01

    A simple photometric assembly based in an LED as a light source and a photodiode as a detector is proposed in order to follow the absorbance changes as a function of the titrant volume added during the course of acid-base titrations in the presence of a suitable visual indicator. The simplicity and low cost of the electronic device allow the…

  7. Hybrid organic/inorganic position-sensitive detectors based on PEDOT:PSS/n-Si

    Science.gov (United States)

    Javadi, Mohammad; Gholami, Mahdiyeh; Torbatiyan, Hadis; Abdi, Yaser

    2018-03-01

    Various configurations like p-n junctions, metal-semiconductor Schottky barriers, and metal-oxide-semiconductor structures have been widely used in position-sensitive detectors. In this report, we propose a PEDOT:PSS/n-Si heterojunction as a hybrid organic/inorganic configuration for position-sensitive detectors. The influence of the thickness of the PEDOT:PSS layer, the wavelength of incident light, and the intensity of illumination on the device performance are investigated. The hybrid PSD exhibits very high sensitivity (>100 mV/mm), excellent nonlinearity (0.995) with a response time of heterojunction are very promising for developing a new class of position-sensitive detectors based on the hybrid organic/inorganic junctions.

  8. Research on correction algorithm of laser positioning system based on four quadrant detector

    Science.gov (United States)

    Gao, Qingsong; Meng, Xiangyong; Qian, Weixian; Cai, Guixia

    2018-02-01

    This paper first introduces the basic principle of the four quadrant detector, and a set of laser positioning experiment system is built based on the four quadrant detector. Four quadrant laser positioning system in the actual application, not only exist interference of background light and detector dark current noise, and the influence of random noise, system stability, spot equivalent error can't be ignored, so it is very important to system calibration and correction. This paper analyzes the various factors of system positioning error, and then propose an algorithm for correcting the system error, the results of simulation and experiment show that the modified algorithm can improve the effect of system error on positioning and improve the positioning accuracy.

  9. 37Ar based neutron source for calibration of the iodine solar neutrino detector

    International Nuclear Information System (INIS)

    Abdurashitov, D.N.; Gavrin, V.N.; Mirmov, I.N.; Veretenkin, E.P.; Yants, V.Eh.; Cleveland, B.T.; Davis, R. Jr.; Lande, K.; Wildenhain, P.; Khomyakov, Yu.S.

    2001-01-01

    The methodology of the creation of a compact neutrino source based on the 37 Ar isotope as well as the technique of calibration of an iodine detector of solar neutrinos is described. An important overall expected result is the creation of a prototype of the source with the intensity up to 400 kCi, delivery of this source to the Baksan neutrino observatory and the test calibration of the single module of the iodine detector. Simulation shows that at least 45-70 127 Xe atoms will be detected in the irradiation of ∼40 tons of methylene iodide by the source leading to ∼19% of the error on the measured production rate. This result should be considered as a test of the developed technology and will verify overall technical readiness for the creation of a full scale neutrino source and the full scale calibration of the iodine detector

  10. The use of detectors based on ionisation recombination in radiation protection

    International Nuclear Information System (INIS)

    Sullivan, A.H.

    1984-01-01

    Intitial recombination of ionisation in a gas depends on the ionisation density and hence on the linear energy transfer along the tracks of charged particles. This effect can be used as a basis for instruments that respond to different types of ionising radiation approximately in the way required by the quality factor-linear energy transfer relation recommended by the ICRP for use in radiation protection. Empirical instruments based on ionisation recombination that have been used for radiation protection measurements are reviewed, and relations are derived from recombination theory that show that the response of such detectors can be readily predicted. The usefulness of recombination instruments in radiation protection is discussed and their advantages and limitations assessed. It is shown that their main application will be as reference instruments against which other detectors can be calibrated. As an extension to using recombination detectors as reference instruments, the feasibility of specifying radiation quality in terms of ionisation recombination is investigated. (author)

  11. Fabrication of Gamma Detectors Based on Magnetic Ag:Er Microcalorimeters

    Energy Technology Data Exchange (ETDEWEB)

    Friedrich, Stephan [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Boyd, Stephen [Univ. of New Mexico, Albuquerque, NM (United States); Cantor, Robin [STAR Cryoelectronics, Santa Fe, NM (United States)

    2015-11-25

    This report discusses the photolithographic fabrication of ultra-high resolution gamma-ray detectors based on magnetic microcalorimeters (MMCs). The MMC uses a novel Er-doped silver sensor (Ag:Er) that is expected to have higher sensitivity than the Er-doped gold (Au:Er) sensors currently in use. The MMC also integrates the first-stage SQUID preamplifier on the same chip as the MMC gamma detector to increase its signal-to-noise ratio. In addition, the MMC uses a passive Ta-Nb heat switch to replace one of the common long-term failure points in earlier detectors. This report discusses the fabrication process we have developed to implement the proposed improvements.

  12. Discriminating cosmic muons and X-rays based on rise time using a GEM detector

    Science.gov (United States)

    Wu, Hui-Yin; Zhao, Sheng-Ying; Wang, Xiao-Dong; Zhang, Xian-Ming; Qi, Hui-Rong; Zhang, Wei; Wu, Ke-Yan; Hu, Bi-Tao; Zhang, Yi

    2016-08-01

    Gas electron multiplier (GEM) detectors have been used in cosmic muon scattering tomography and neutron imaging over the last decade. In this work, a triple GEM device with an effective readout area of 10 cm × 10 cm is developed, and a method of discriminating between cosmic muons and X-rays based on rise time is tested. The energy resolution of the GEM detector is tested by 55Fe ray source to prove the GEM detector has a good performance. Analysis of the complete signal-cycles allows us to get the rise time and pulse heights. The experiment result indicates that cosmic muons and X-rays can be discriminated with an appropriate rise time threshold. Supported by National Natural Science Foundation of China (11135002, 11275235, 11405077, 11575073)

  13. Fabrication of Gamma Detectors Based on Magnetic Ag:Er Microcalorimeters

    Energy Technology Data Exchange (ETDEWEB)

    Friedrich, Stephan [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Boyd, Stephen [Univ. of New Mexico, Albuquerque, NM (United States); Cantor, Robin [STAR Cryoelectronics, Santa Fe, NM (United States)

    2016-05-06

    This report discusses the photolithographic fabrication of ultra-high resolution gamma-ray detectors based on magnetic microcalorimeters (MMCs). The MMC uses a novel Er-doped silver sensor (Ag:Er) that is expected to have higher sensitivity than the Er-doped gold (Au:Er) sensors currently in use. The MMC also integrates the first-stage SQUID preamplifier on the same chip as the MMC gamma detector to increase its signal-to-noise ratio. In addition, the MMC uses a passive Ta-Nb heat switch to replace one of the common long-term failure points in earlier detectors. This report discusses the fabrication process we have developed to implement the proposed improvements.

  14. Fabrication of Gamma Detectors Based on Magnetic Ag:Er Microcalorimeters

    International Nuclear Information System (INIS)

    Friedrich, Stephan; Boyd, Stephen; Cantor, Robin

    2016-01-01

    This report discusses the photolithographic fabrication of ultra-high resolution gamma-ray detectors based on magnetic microcalorimeters (MMCs). The MMC uses a novel Er-doped silver sensor (Ag:Er) that is expected to have higher sensitivity than the Er-doped gold (Au:Er) sensors currently in use. The MMC also integrates the first-stage SQUID preamplifier on the same chip as the MMC gamma detector to increase its signal-to-noise ratio. In addition, the MMC uses a passive Ta-Nb heat switch to replace one of the common long-term failure points in earlier detectors. This report discusses the fabrication process we have developed to implement the proposed improvements.

  15. Fabrication of Gamma Detectors Based on Magnetic Ag:Er Microcalorimeters

    International Nuclear Information System (INIS)

    Friedrich, Stephan; Boyd, Stephen; Cantor, Robin

    2015-01-01

    This report discusses the photolithographic fabrication of ultra-high resolution gamma-ray detectors based on magnetic microcalorimeters (MMCs). The MMC uses a novel Er-doped silver sensor (Ag:Er) that is expected to have higher sensitivity than the Er-doped gold (Au:Er) sensors currently in use. The MMC also integrates the first-stage SQUID preamplifier on the same chip as the MMC gamma detector to increase its signal-to-noise ratio. In addition, the MMC uses a passive Ta-Nb heat switch to replace one of the common long-term failure points in earlier detectors. This report discusses the fabrication process we have developed to implement the proposed improvements.

  16. Role of chamber dimension in fluorocarbon based deposition and etching of SiO2 and its effects on gas and surface-phase chemistry

    International Nuclear Information System (INIS)

    Joseph, E. A.; Zhou, B.-S.; Sant, S. P.; Overzet, L. J.; Goeckner, M. J.

    2008-01-01

    It is well understood that chamber geometry is an influential factor governing plasma processing of materials. Simple models suggest that a large fraction of this influence is due to changes in basic plasma properties, namely, density, temperature, and potential. However, while such factors do play an important role, they only partly describe the observed differences in process results. Therefore, to better elucidate the role of chamber geometry in this work, the authors explore the influence of plasma chemistry and its symbiotic effect on plasma processing by decoupling the plasma density, temperature, and potential from the plasma-surface (wall) interactions. Specifically, a plasma system is used with which the authors can vary the chamber dimension so as to vary the plasma-surface interaction directly. By varying chamber wall diameter, 20-66 cm, and source-platen distance, 4-6 cm, the etch behavior of SiO 2 (or the deposition behavior of fluorocarbon polymer) and the resulting gas-phase chemistry change significantly. Results from in situ spectroscopic ellipsometry show significant differences in etch characteristics, with etch rates as high as 350 nm/min and as low as 75 nm/min for the same self-bias voltage. Fluorocarbon deposition rates are also highly dependent on chamber dimension and vary from no net deposition to deposition rates as high as 225 nm/min. Etch yields, however, remain unaffected by the chamber size variations. From Langmuir probe measurements, it is clear that chamber geometry results in significant shifts in plasma properties such as electron and ion densities. Indeed, such measurements show that on-wafer processes are limited at least in part by ion flux for high energy reactive ion etch. However, in situ multipass Fourier transform infrared spectroscopy reveals that the line-averaged COF 2 , SiF 4 , CF 2 , and CF 3 gas-phase densities are also dependent on chamber dimension at high self-bias voltage and also correlate well to the CF x

  17. The performance of silicon detectors for the SiliPET project: A small animal PET scanner based on stacks of silicon detectors

    International Nuclear Information System (INIS)

    Auricchio, Natalia; Domenico, Giovanni di; Zavattini, Guido; Milano, Luciano; Malaguti, Roberto

    2011-01-01

    We propose a new scanner for small animal Positron Emission Tomography (PET) based on stacks of double sided silicon detectors. Each stack is made of 40 planar detectors with dimension 60x60x1 mm 3 and 128 orthogonal strips on both sides to read the two coordinates of interaction, the third being the detector number in the stack. Multiple interactions in a stack are discarded by an exclusive OR applied between each detector plane of a stack. In this way we achieve a precise determination of the interaction point of the two 511 keV photons. The reduced dimensions of the scanner also improve the solid angle coverage resulting in a high sensitivity. Preliminary results were obtained with MEGA prototype tracker (11 double sided Si detector layers), divided into two stacks 2 cm apart made of, respectively, 5 and 6 prototype layers, placing a small spherical 22 Na source in different positions. We report on the results, spatial resolution, imaging and timing performances obtained with double sided silicon detectors, manufactured by ITC-FBK, having an active area of 3x3 cm 2 , thickness of 1 mm and a strip pitch of 500μm. Two different strip widths of 300 and 200μm equipped with 64 orthogonal p and n strips on opposite sides were read out with the VATAGP2.5 ASIC, a 128-channel 'general purpose' charge sensitive amplifier.

  18. Time resolution in scintillator based detectors for positron emission tomography

    International Nuclear Information System (INIS)

    Gundacker, S.

    2014-01-01

    In the domain of medical photon detectors L(Y)SO scintillators are used for positron emission tomography (PET). The interest for time of flight (TOF) in PET is increasing since measurements have shown that new crystals like L(Y)SO coupled to state of the art photodetectors, e.g. silicon photomultipliers (SiPM), can reach coincidence time resolutions (CTRs) of far below 500ps FWHM. To achieve these goals it is important to study the processe in the whole detection chain, i.e. the high energy particle or gamma interaction in the crystal, the scintillation process itself, the light propagation in the crystal with the light transfer to the photodetector, and the electronic readout. In this thesis time resolution measurements for a PET like system are performed in a coincidence setup utilizing the ultra fast amplifier discriminator NINO. We found that the time-over-threshold energy information provided by NINO shows a degradation in energy resolution for higher SiPM bias voltages. This is a consequence of the increasing dark count rate (DCR) of the SiPM with higher bias voltages together with the exponential decay of the signal. To overcome this problem and to operate the SiPM at its optimum voltage in terms of timing we developed a new electronic board that employs NINO only as a low noise leading edge discriminator together with an analog amplifier which delivers the energy information. With this new electronic board we indeed improved the measured CTR by about 15%. To study the limits of time resolution in more depth we measured the CTR with 2x2x3mm3 LSO:Ce codoped 0.4%Ca crystals coupled to commercially available SiPMs (Hamamatsu S10931-50P MPPC) and achieved a CTR of 108±5ps FWHM at an energy of 511keV. We determined the influence of the data acquisition system and the electronics on the CTR to be 27±2ps FWHM and thus negligible. To quantitatively understand the measured values, we developed a Monte Carlo simulation tool in MATLAB that incorporates the timing

  19. Estimate of the neutron fields in ATLAS based on ATLAS-MPX detectors data

    Energy Technology Data Exchange (ETDEWEB)

    Bouchami, J; Dallaire, F; Gutierrez, A; Idarraga, J; Leroy, C; Picard, S; Scallon, O [Universite de Montreal, Montreal, Quebec H3C 3J7 (Canada); Kral, V; PospIsil, S; Solc, J; Suk, M; Turecek, D; Vykydal, Z; Zemlieka, J, E-mail: scallon@lps.umontreal.ca [Institute of Experimental and Applied Physics of the CTU in Prague, Horska 3a/22, CZ-12800 Praha2 - Albertov (Czech Republic)

    2011-01-15

    The ATLAS-MPX detectors are based on Medipix2 silicon devices designed by CERN for the detection of different types of radiation. These detectors are covered with converting layers of {sup 6}LiF and polyethylene (PE) to increase their sensitivity to thermal and fast neutrons, respectively. These devices allow the measurement of the composition and spectroscopic characteristics of the radiation field in ATLAS, particularly of neutrons. These detectors can operate in low or high preset energy threshold mode. The signature of particles interacting in a ATLAS-MPX detector at low threshold are clusters of adjacent pixels with different size and form depending on their type, energy and incidence angle. The classification of particles into different categories can be done using the geometrical parameters of these clusters. The Medipix analysis framework (MAFalda) - based on the ROOT application - allows the recognition of particle tracks left in ATLAS-MPX devices located at various positions in the ATLAS detector and cavern. The pattern recognition obtained from the application of MAFalda was configured to distinguish the response of neutrons from other radiation. The neutron response at low threshold is characterized by clusters of adjoining pixels (heavy tracks and heavy blobs) left by protons and heavy ions resulting from neutron interactions in the converting layers of the ATLAS-MPX devices. The neutron detection efficiency of ATLAS-MPX devices has been determined by the exposure of two detectors of reference to radionuclide sources of neutrons ({sup 252}Cf and {sup 241}AmBe). With these results, an estimate of the neutrons fields produced at the devices locations during ATLAS operation was done.

  20. Estimate of the neutron fields in ATLAS based on ATLAS-MPX detectors data

    International Nuclear Information System (INIS)

    Bouchami, J; Dallaire, F; Gutierrez, A; Idarraga, J; Leroy, C; Picard, S; Scallon, O; Kral, V; PospIsil, S; Solc, J; Suk, M; Turecek, D; Vykydal, Z; Zemlieka, J

    2011-01-01

    The ATLAS-MPX detectors are based on Medipix2 silicon devices designed by CERN for the detection of different types of radiation. These detectors are covered with converting layers of 6 LiF and polyethylene (PE) to increase their sensitivity to thermal and fast neutrons, respectively. These devices allow the measurement of the composition and spectroscopic characteristics of the radiation field in ATLAS, particularly of neutrons. These detectors can operate in low or high preset energy threshold mode. The signature of particles interacting in a ATLAS-MPX detector at low threshold are clusters of adjacent pixels with different size and form depending on their type, energy and incidence angle. The classification of particles into different categories can be done using the geometrical parameters of these clusters. The Medipix analysis framework (MAFalda) - based on the ROOT application - allows the recognition of particle tracks left in ATLAS-MPX devices located at various positions in the ATLAS detector and cavern. The pattern recognition obtained from the application of MAFalda was configured to distinguish the response of neutrons from other radiation. The neutron response at low threshold is characterized by clusters of adjoining pixels (heavy tracks and heavy blobs) left by protons and heavy ions resulting from neutron interactions in the converting layers of the ATLAS-MPX devices. The neutron detection efficiency of ATLAS-MPX devices has been determined by the exposure of two detectors of reference to radionuclide sources of neutrons ( 252 Cf and 241 AmBe). With these results, an estimate of the neutrons fields produced at the devices locations during ATLAS operation was done.

  1. Estimate of the neutron fields in ATLAS based on ATLAS-MPX detectors data

    Science.gov (United States)

    Bouchami, J.; Dallaire, F.; Gutiérrez, A.; Idarraga, J.; Král, V.; Leroy, C.; Picard, S.; Pospíšil, S.; Scallon, O.; Solc, J.; Suk, M.; Turecek, D.; Vykydal, Z.; Žemlièka, J.

    2011-01-01

    The ATLAS-MPX detectors are based on Medipix2 silicon devices designed by CERN for the detection of different types of radiation. These detectors are covered with converting layers of 6LiF and polyethylene (PE) to increase their sensitivity to thermal and fast neutrons, respectively. These devices allow the measurement of the composition and spectroscopic characteristics of the radiation field in ATLAS, particularly of neutrons. These detectors can operate in low or high preset energy threshold mode. The signature of particles interacting in a ATLAS-MPX detector at low threshold are clusters of adjacent pixels with different size and form depending on their type, energy and incidence angle. The classification of particles into different categories can be done using the geometrical parameters of these clusters. The Medipix analysis framework (MAFalda) — based on the ROOT application — allows the recognition of particle tracks left in ATLAS-MPX devices located at various positions in the ATLAS detector and cavern. The pattern recognition obtained from the application of MAFalda was configured to distinguish the response of neutrons from other radiation. The neutron response at low threshold is characterized by clusters of adjoining pixels (heavy tracks and heavy blobs) left by protons and heavy ions resulting from neutron interactions in the converting layers of the ATLAS-MPX devices. The neutron detection efficiency of ATLAS-MPX devices has been determined by the exposure of two detectors of reference to radionuclide sources of neutrons (252Cf and 241AmBe). With these results, an estimate of the neutrons fields produced at the devices locations during ATLAS operation was done.

  2. An instrumentation amplifier based readout circuit for a dual element microbolometer infrared detector

    Science.gov (United States)

    de Waal, D. J.; Schoeman, J.

    2014-06-01

    The infrared band is widely used in many applications to solve problems stretching over very diverse fields, ranging from medical applications like inflammation detection to military, security and safety applications employing thermal imaging in low light conditions. At the heart of these optoelectrical systems lies a sensor used to detect incident infrared radiation, and in the case of this work our focus is on uncooled microbolometers as thermal detectors. Microbolometer based thermal detectors are limited in sensitivity by various parameters, including the detector layout and design, operating temperature, air pressure and biasing that causes self heating. Traditional microbolometers use the entire membrane surface for a single detector material. This work presents the design of a readout circuit amplifier where a dual detector element microbolometer is used, rather than the traditional single element. The concept to be investigated is based on the principle that both elements will be stimulated with a similar incoming IR signal and experience the same resistive change, thus creating a common mode signal. However, such a common mode signal will be rejected by a differential amplifier, thus one element is placed within a negative resistance converter to create a differential mode signal that is twice the magnitude of the comparable single mode signal of traditional detector designs. An instrumentation amplifier is used for the final stage of the readout amplifier circuit, as it allows for very high common mode rejection with proper trimming of the Wheatstone bridge to compensate for manufacturing tolerance. It was found that by implementing the above, improved sensitivity can be achieved.

  3. FPGA-based GEM detector signal acquisition for SXR spectroscopy system

    Science.gov (United States)

    Wojenski, A.; Pozniak, K. T.; Kasprowicz, G.; Kolasinski, P.; Krawczyk, R.; Zabolotny, W.; Chernyshova, M.; Czarski, T.; Malinowski, K.

    2016-11-01

    The presented work is related to the Gas Electron Multiplier (GEM) detector soft X-ray spectroscopy system for tokamak applications. The used GEM detector has one-dimensional, 128 channel readout structure. The channels are connected to the radiation-hard electronics with configurable analog stage and fast ADCs, supporting speeds of 125 MSPS for each channel. The digitalized data is sent directly to the FPGAs using fast serial links. The preprocessing algorithms are implemented in the FPGAs, with the data buffering made in the on-board 2Gb DDR3 memory chips. After the algorithmic stage, the data is sent to the Intel Xeon-based PC for further postprocessing using PCI-Express link Gen 2. For connection of multiple FPGAs, PCI-Express switch 8-to-1 was designed. The whole system can support up to 2048 analog channels. The scope of the work is an FPGA-based implementation of the recorder of the raw signal from GEM detector. Since the system will work in a very challenging environment (neutron radiation, intense electro-magnetic fields), the registered signals from the GEM detector can be corrupted. In the case of the very intense hot plasma radiation (e.g. laser generated plasma), the registered signals can overlap. Therefore, it is valuable to register the raw signals from the GEM detector with high number of events during soft X-ray radiation. The signal analysis will have the direct impact on the implementation of photon energy computation algorithms. As the result, the system will produce energy spectra and topological distribution of soft X-ray radiation. The advanced software was developed in order to perform complex system startup and monitoring of hardware units. Using the array of two one-dimensional GEM detectors it will be possible to perform tomographic reconstruction of plasma impurities radiation in the SXR region.

  4. Overview Of Dry-Etch Techniques

    Science.gov (United States)

    Salzer, John M.

    1986-08-01

    With pattern dimensions shrinking, dry methods of etching providing controllable degrees of anisotropy become a necessity. A number of different configurations of equipment - inline, hex, planar, barrel - have been offered, and within each type, there are numerous significant variations. Further, each specific type of machine must be perfected over a complex, interactive parameter space to achieve suitable removal of various materials. Among the most critical system parameters are the choice of cathode or anode to hold the wafers, the chamber pressure, the plasma excitation frequency, and the electrode and magnetron structures. Recent trends include the use of vacuum load locks, multiple chambers, multiple electrodes, downstream etching or stripping, and multistep processes. A major percentage of etches in production handle the three materials: polysilicon, oxide and aluminum. Recent process developments have targeted refractory metals, their silicides, and with increasing emphasis, silicon trenching. Indeed, with new VLSI structures, silicon trenching has become the process of greatest interest. For stripping, dry processes provide advantages other than anisotropy. Here, too, new configurations and methods have been introduced recently. While wet processes are less than desirable from a number of viewpoints (handling, safety, disposal, venting, classes of clean room, automatability), dry methods are still being perfected as a direct, universal replacement. The paper will give an overview of these machine structures and process solutions, together with examples of interest. These findings and the trends discussed are based on semiannual survey of manufacturers and users of the various types of equipment.

  5. Fabrication of etched facets and vertical couplers in InP for packaging and on-wafer test

    NARCIS (Netherlands)

    Lemos Alvares Dos Santos, Rui; D'Agostino, D.; Soares, F. M.; Haghighi, H. Rabbani; Williams, K. A.; Leijtens, X. J. M.

    2016-01-01

    In this letter, the fabrication and the characterization of angled and straight etched facets in InP-based technology are reported. In addition, we report on etched facets combined with coupler mirrors for vertical outcoupling, realized with a wet-etching process.

  6. Effects of high neutron doses and duration of the chemical etching on the optical properties of CR-39

    International Nuclear Information System (INIS)

    Sahoo, G.S.; Tripathy, S.P.; Paul, S.; Sharma, S.C.; Joshi, D.S.; Gupta, A.K.; Bandyopadhyay, T.

    2015-01-01

    Effects of the duration of chemical etching on the transmittance, absorbance and optical band gap width of the CR-39 (Polyallyl diglycol carbonate) detectors irradiated to high neutron doses (12.7, 22.1, 36.0 and 43.5 Sv) were studied. The neutrons were produced by bombardment of a thick Be target with 12 MeV protons of different fluences. The unirradiated and neutron-irradiated CR-39 detectors were subjected to a stepwise chemical etching at 1 h intervals. After each step, the transmission spectra of the detectors were recorded in the range from 200 to 900 nm, and the absorbances and optical band gap widths were determined. The effect of the etching on the light transmittance of unirradiated detectors was insignificant, whereas it was very significant in the case of the irradiated detectors. The dependence of the optical absorbance on the neutron dose is linear at short etching periods, but exponential at longer ones. The optical band gap narrows with increasing etching time. It is more significant for the irradiated dosimeters than for the unirradiated ones. The rate of the narrowing of the optical band gap with increasing neutron dose increases with increasing duration of the etching. - Highlights: • The variation of optical properties of CR-39 at very high neutron dose is analyzed. Etching process is found to play a crucial role for change in optical properties of neutron-irradiated CR-39. • The optical absorbance varies linearly at lower dose, at very high dose absorbance saturation occurs. The dose at which saturation absorbance is observed shifts towards lower neutron dose with increase in etching time. • The rate of decrease in optical band gap with respect to neutron dose is found to be more at higher etching durations

  7. High energy astrophysics with ground-based gamma ray detectors

    International Nuclear Information System (INIS)

    Aharonian, F; Buckley, J; Kifune, T; Sinnis, G

    2008-01-01

    Recent advances in ground-based gamma ray astronomy have led to the discovery of more than 70 sources of very high energy (E γ ≥ 100 GeV) gamma rays, falling into a number of source populations including pulsar wind nebulae, shell type supernova remnants, Wolf-Rayet stars, giant molecular clouds, binary systems, the Galactic Center, active galactic nuclei and 'dark' (yet unidentified) galactic objects. We summarize the history of TeV gamma ray astronomy up to the current status of the field including a description of experimental techniques and highlight recent astrophysical results. We also discuss the potential of ground-based gamma ray astronomy for future discoveries and describe possible directions for future instrumental developments

  8. Ticor-based scintillation detectors for detection of mixed radiation

    CERN Document Server

    Litvinov, L A; Kolner, V B; Ryzhikov, V D; Volkov, V G; Tarasov, V A; Zelenskaya, O V

    2002-01-01

    Detection of mixed radiation of thermal neutrons and gamma-rays have been realized using a new ceramic material based on small-crystalline long-wave scintillator alpha-Al sub 2 O sub 3 :Ti (Ticor) and lithium fluoride. Characteristics are presented for scintillators with Si-PIN-PD type photoreceivers and PMT under sup 2 sup 3 sup 9 Pu alpha-particles, sup 2 sup 0 sup 7 Bi internal conversion electrons,as well as sup 2 sup 4 sup 1 Am and sup 1 sup 3 sup 7 Cs gamma-quanta. Detection efficiency of thermal neutron is estimated for composite materials based on Ticor and lithium fluoride.

  9. An Adaptive Failure Detector Based on Quality of Service in Peer-to-Peer Networks

    Directory of Open Access Journals (Sweden)

    Jian Dong

    2014-09-01

    Full Text Available The failure detector is one of the fundamental components that maintain high availability of Peer-to-Peer (P2P networks. Under different network conditions, the adaptive failure detector based on quality of service (QoS can achieve the detection time and accuracy required by upper applications with lower detection overhead. In P2P systems, complexity of network and high churn lead to high message loss rate. To reduce the impact on detection accuracy, baseline detection strategy based on retransmission mechanism has been employed widely in many P2P applications; however, Chen’s classic adaptive model cannot describe this kind of detection strategy. In order to provide an efficient service of failure detection in P2P systems, this paper establishes a novel QoS evaluation model for the baseline detection strategy. The relationship between the detection period and the QoS is discussed and on this basis, an adaptive failure detector (B-AFD is proposed, which can meet the quantitative QoS metrics under changing network environment. Meanwhile, it is observed from the experimental analysis that B-AFD achieves better detection accuracy and time with lower detection overhead compared to the traditional baseline strategy and the adaptive detectors based on Chen’s model. Moreover, B-AFD has better adaptability to P2P network.

  10. An Adaptive Failure Detector Based on Quality of Service in Peer-to-Peer Networks

    Science.gov (United States)

    Dong, Jian; Ren, Xiao; Zuo, Decheng; Liu, Hongwei

    2014-01-01

    The failure detector is one of the fundamental components that maintain high availability of Peer-to-Peer (P2P) networks. Under different network conditions, the adaptive failure detector based on quality of service (QoS) can achieve the detection time and accuracy required by upper applications with lower detection overhead. In P2P systems, complexity of network and high churn lead to high message loss rate. To reduce the impact on detection accuracy, baseline detection strategy based on retransmission mechanism has been employed widely in many P2P applications; however, Chen's classic adaptive model cannot describe this kind of detection strategy. In order to provide an efficient service of failure detection in P2P systems, this paper establishes a novel QoS evaluation model for the baseline detection strategy. The relationship between the detection period and the QoS is discussed and on this basis, an adaptive failure detector (B-AFD) is proposed, which can meet the quantitative QoS metrics under changing network environment. Meanwhile, it is observed from the experimental analysis that B-AFD achieves better detection accuracy and time with lower detection overhead compared to the traditional baseline strategy and the adaptive detectors based on Chen's model. Moreover, B-AFD has better adaptability to P2P network. PMID:25198005

  11. Gamma-ray detector based on high pressure xenon for radiation and environmental safety

    International Nuclear Information System (INIS)

    Kutny, V.E.; Rybka, A.V.; Davydov, L.N.; Pudov, A.O.; Sokolov, S.A.; Kholomeyev, G.A.; Melnikov, S.I.; Turchin, A.A.

    2017-01-01

    Gamma-spectrometers based on compressed xenon gas assigned for monitoring the reactors and the radiation background at nuclear power plants, non-proliferation of radioactive materials, supervision and control over the radiation background in the environmentally disadvantaged areas, and other applications, are very promising detectors with excellent performance characteristics. This article reports on the results of the first stage of work on the creation of the portable gamma-spectrometer based on compressed xenon that is unique for Ukraine. In order to work with ultra-pure gases under pressure, the complex cryogenic installation for Xe purification and detector filling was designed and manufactured. The installation was made of specially cleaned components, equipped with a heating system for the degassing of the inner walls, and is able of maintaining high vacuum down to 2 centre dot 10"-"9 mbar. A prototype ionization chamber for the use in portable HP Xe detectors was developed and made. For the detector testing, a spectrometric channel based on high-quality electronic components was designed and manufactured. In the initial experiments, a study of the properties of the purified Xe mixed with the dopant H_2 was carried out. The assessment of the lifetime of charge carriers τ in the working gas at a pressure of 30 bar gave the value of τ > 150 μs

  12. Fast Multi-Symbol Based Iterative Detectors for UWB Communications

    Directory of Open Access Journals (Sweden)

    Lottici Vincenzo

    2010-01-01

    Full Text Available Ultra-wideband (UWB impulse radios have shown great potential in wireless local area networks for localization, coexistence with other services, and low probability of interception and detection. However, low transmission power and high multipath effect make the detection of UWB signals challenging. Recently, multi-symbol based detection has caught attention for UWB communications because it provides good performance and does not require explicit channel estimation. Most of the existing multi-symbol based methods incur a higher computational cost than can be afforded in the envisioned UWB systems. In this paper, we propose an iterative multi-symbol based method that has low complexity and provides near optimal performance. Our method uses only one initial symbol to start and applies a decision directed approach to iteratively update a filter template and information symbols. Simulations show that our method converges in only a few iterations (less than 5, and that when the number of symbols increases, the performance of our method approaches that of the ideal Rake receiver.

  13. Diagnosis of pneumothorax using a microwave-based detector

    Science.gov (United States)

    Ling, Geoffrey S. F.; Riechers, Ronald G., Sr.; Pasala, Krishna M.; Blanchard, Jeremy; Nozaki, Masako; Ramage, Anthony; Jackson, William; Rosner, Michael; Garcia-Pinto, Patricia; Yun, Catherine; Butler, Nathan; Riechers, Ronald G., Jr.; Williams, Daniel; Zeidman, Seth M.; Rhee, Peter; Ecklund, James M.; Fitzpatrick, Thomas; Lockhart, Stephen

    2001-08-01

    A novel method for identifying pneumothorax is presented. This method is based on a novel device that uses electromagnetic waves in the microwave radio frequency (RF) region and a modified algorithm previously used for the estimation of the angle of arrival of radar signals. In this study, we employ this radio frequency triage tool (RAFT) to the clinical condition of pneumothorax, which is a collapsed lung. In anesthetized pigs, RAFT can detect changes in the RF signature from a lung that is 20 percent or greater collapsed. These results are compared to chest x-ray. Both studies are equivalent in their ability to detect pneumothorax in pigs.

  14. EIT Based Gas Detector Design by Using Michelson Interferometer

    International Nuclear Information System (INIS)

    Abbasian, K.; Rostami, A.; Abdollahi, M. H.

    2011-01-01

    Electromagnetically induced transparency (EIT) is one of the interesting phenomena of light-matter interaction which modifies matter properties for propagation of light. In other words, we can change the absorption and refractive index (RI) in neighborhood of the resonant frequency using EIT. In this paper, we have doped 3-level quantum dots in one of the Michelson Interferometer's mirror and used EIT to change its RI. So, a controllable phase difference between lights in two arms of interferometer is created. Long response time is the main drawback of Michelson interferometer based sensor, which is resolved by this technique.

  15. Electron capture detector based on a non-radioactive electron source: operating parameters vs. analytical performance

    Directory of Open Access Journals (Sweden)

    E. Bunert

    2017-12-01

    Full Text Available Gas chromatographs with electron capture detectors are widely used for the analysis of electron affine substances such as pesticides or chlorofluorocarbons. With detection limits in the low pptv range, electron capture detectors are the most sensitive detectors available for such compounds. Based on their operating principle, they require free electrons at atmospheric pressure, which are usually generated by a β− decay. However, the use of radioactive materials leads to regulatory restrictions regarding purchase, operation, and disposal. Here, we present a novel electron capture detector based on a non-radioactive electron source that shows similar detection limits compared to radioactive detectors but that is not subject to these limitations and offers further advantages such as adjustable electron densities and energies. In this work we show first experimental results using 1,1,2-trichloroethane and sevoflurane, and investigate the effect of several operating parameters on the analytical performance of this new non-radioactive electron capture detector (ECD.

  16. Dry etch challenges for CD shrinkage in memory process

    Science.gov (United States)

    Matsushita, Takaya; Matsumoto, Takanori; Mukai, Hidefumi; Kyoh, Suigen; Hashimoto, Kohji

    2015-03-01

    Line pattern collapse attracts attention as a new problem of the L&S formation in sub-20nm H.P feature. Line pattern collapse that occurs in a slight non-uniformity of adjacent CD (Critical dimension) space using double patterning process has been studied with focus on micro-loading effect in Si etching. Bias RF pulsing plasma etching process using low duty cycle helped increase of selectivity Si to SiO2. In addition to the effect of Bias RF pulsing process, the thin mask obtained from improvement of selectivity has greatly suppressed micro-loading in Si etching. However it was found that micro-loading effect worsen again in sub-20nm space width. It has been confirmed that by using cycle etch process to remove deposition with CFx based etching micro-loading effect could be suppressed. Finally, Si etching process condition using combination of results above could provide finer line and space without "line pattern collapse" in sub-20nm.

  17. Etching of germanium-tin using ammonia peroxide mixture

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Yuan; Ong, Bin Leong; Wang, Wei; Gong, Xiao; Liang, Gengchiau; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Zhang, Zheng; Pan, Jisheng [Institute of Material Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, #08-03, Innovis, Singapore 138634 (Singapore); Tok, Eng-Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

    2015-12-28

    The wet etching of germanium-tin (Ge{sub 1-x}Sn{sub x}) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge{sub 1-x}Sn{sub x} is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge{sub 1-x}Sn{sub x} surface decreases the amount of Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge{sub 0.918}Sn{sub 0.082} samples. Both root-mean-square roughness and undulation periods of the Ge{sub 1-x}Sn{sub x} surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge{sub 1-x}Sn{sub x} using APM and may be used for the fabrication of Ge{sub 1-x}Sn{sub x}-based electronic and photonic devices.

  18. Level Set Approach to Anisotropic Wet Etching of Silicon

    Directory of Open Access Journals (Sweden)

    Branislav Radjenović

    2010-05-01

    Full Text Available In this paper a methodology for the three dimensional (3D modeling and simulation of the profile evolution during anisotropic wet etching of silicon based on the level set method is presented. Etching rate anisotropy in silicon is modeled taking into account full silicon symmetry properties, by means of the interpolation technique using experimentally obtained values for the etching rates along thirteen principal and high index directions in KOH solutions. The resulting level set equations are solved using an open source implementation of the sparse field method (ITK library, developed in medical image processing community, extended for the case of non-convex Hamiltonians. Simulation results for some interesting initial 3D shapes, as well as some more practical examples illustrating anisotropic etching simulation in the presence of masks (simple square aperture mask, convex corner undercutting and convex corner compensation, formation of suspended structures are shown also. The obtained results show that level set method can be used as an effective tool for wet etching process modeling, and that is a viable alternative to the Cellular Automata method which now prevails in the simulations of the wet etching process.

  19. The MAPS-based vertex detector for the STAR experiment: Lessons learned and performance

    Energy Technology Data Exchange (ETDEWEB)

    Contin, Giacomo, E-mail: gcontin@lbl.gov

    2016-09-21

    The PiXeL detector (PXL) of the STAR experiment at RHIC is the first application of the state-of-the-art thin Monolithic Active Pixel Sensors (MAPS) technology in a collider environment. The PXL, together with the Intermediate Silicon Tracker (IST) and the Silicon Strip Detector (SSD), form the Heavy Flavor Tracker (HFT), which has been designed to improve the vertex resolution and extend the STAR measurement capabilities in the heavy flavor domain, providing a clean probe for studying the Quark–Gluon Plasma. The two PXL layers are placed at a radius of 2.8 and 8 cm from the beam line, respectively, and is based on ultra-thin high resolution MAPS sensors. The sensor features 20.7 μm pixel pitch, 185.6 μs readout time and 170 mW/cm{sup 2} power dissipation. The detector is air-cooled, allowing a global material budget of 0.4% radiation length on the innermost layer. A novel mechanical approach to detector insertion allows for fast installation and integration of the pixel sub detector. The HFT took data in Au+Au collisions at 200 GeV during the 2014 RHIC run. Modified during the RHIC shutdown to improve its reliability, material budget, and tracking capabilities, the HFT took data in p+p and p+Au collisions at √s{sub NN}=200 GeV in the 2015 RHIC run. In this paper we present detector specifications, experience from the construction and operations, and lessons learned. We also show preliminary results from 2014 Au+Au data analyses, demonstrating the capabilities of charm reconstruction with the HFT. - Highlights: • First MAPS-based vertex detector in a collider experiment. • Achieved low material budget of 0.39% of radiation length per detector layer. • Track pointing resolution to the primary vertex better than 10⊕24 GeV/p×c μm. • Gain in significance for the topological reconstruction of the D{sup 0}−>K+π decay in STAR. • Observed latch-up induced damage of MAPS sensors.

  20. Calibration of Nuclear Track Detectors

    International Nuclear Information System (INIS)

    Vukovic, J.B; Antanasijevic, R.; Novakovic, V.; Tasic, M.

    1998-01-01

    In this work we compare some of our preliminary results relating to the calibration Nuclear Track Detectors (NTD) with corresponding results obtained from other participants at the First International Intercomparison of Image Analyzers (III 97/98). Thirteen laboratories from Algeria, China, Czech Rep., France. Germany, Greece, Hungary, India, Italy, Mexico, Saudi Arabia, Slovenia and Yugoslavia participated in the III A 97/98. The NTD was 'Tustrack', Bristol. This type of CR-39 detector was etched by the organizer (J.Paltarey of al, Atomic Energy Research Institute, HPD, Budapest, Hungary). Etching condition was: 6N NaOH, 70 0C . Seven series detectors were exposed with the sources: B(n,a)Li, Am-241, Pu-Be(n,p), Radon and Am-Cm-Pu. Following parameters of exposed detectors were measured: track density of different sorts of tracks (circular, elliptical, track overlapping, their diameters, major and minor axis and other). (authors)