WorldWideScience

Sample records for energy ion irradiation

  1. Low-energy irradiation effects of gas cluster ion beams

    Houzumi, Shingo; Takeshima, Keigo; Mochiji, Kozo; Toyoda, Noriaki; Yamada, Isao

    2007-01-01

    A cluster-ion irradiation system with cluster-size selection has been developed to study the effects of the cluster size for surface processes using cluster ions. A permanent magnet with a magnetic field of 1.2 T is installed for size separation of large cluster ions. Trace formations at HOPG surface by the irradiation with size-selected Ar-cluster ions under acceleration energy of 30 keV were investigated by a scanning tunneling microscopy. Generation behavior of the crater-like traces is strongly affected by the number of constituent atoms (cluster size) of the irradiating cluster ion. When the incident cluster ion is composed of 100-3000 atoms, crater-like traces are observed on the irradiated surfaces. In contrast, such traces are not observed at all with the irradiation of the cluster-ions composed of over 5000 atoms. Such the behavior is discussed on the basis of the kinetic energy per constituent atom of the cluster ion. To study GCIB irradiation effects against macromolecule, GCIB was irradiated on DNA molecules absorbed on graphite surface. By the GCIB irradiation, much more DNA molecules was sputtered away as compared with the monomer-ion irradiation. (author)

  2. Low energy ion implantation and high energy heavy ion irradiation in C60 films

    Narayanan, K.L.; Yamaguchi, M.; Dharmarasu, N.; Kojima, N.; Kanjilal, D.

    2001-01-01

    C 60 films have been bombarded with low energy boron ions and high energy swift heavy ions (SHI) of silver and oxygen at different doses. Raman scattering and Fourier transform infrared (FTIR) studies were carried out on the virgin and irradiated films and the results are in good agreement with each other. The films subject to low energy boron ion implantation showed destruction of the bukky balls whereas the films subject to high energy ion irradiation did not show appreciable effects on their structure. These results indicate that C 60 films are more prone to defects by elastic collision and subsequent implantation at lower energy. Irradiation at higher energy was less effective in creating appreciable defects through electronic excitation by inelastic collisions at similar energy density

  3. High energy argon ion irradiations of polycrystalline iron

    Dunlop, A.; Lesueur, D.; Lorenzelli, N.; Boulanger, L.

    1986-09-01

    We present here the results of our recent irradiations of polycrystalline iron targets with very energetic (1.76 GeV) Ar ions. The targets consist of piles of thin iron samples, the total thickness of each target being somewhat greater than the theoretical range (450 μm) of the ions. We can thus separate the phenomena which occur at different average energies of the ions and study during the slowing-down process: the different types of induced nuclear reactions. They allow us to determine the experimental range of the ions, the defect profiles in the targets, the structure of the displacement cascades (electron microscopy) and their stability

  4. Stability of uranium silicides during high energy ion irradiation

    Birtcher, R.C; Wang, L.M.

    1991-11-01

    Changes induced by 1.5 MeV Kr ion irradiation of both U 3 Si and U 3 Si 2 have been followed by in situ transmission electron microscopy. When irradiated at sufficiently low temperatures, both alloys transform from the crystalline to the amorphous state. When irradiated at temperatures above the temperature limit for ion beam amorphization, both compounds disorder with the Martensite twin structure in U 3 Si disappearing from view in TEM. Prolonged irradiation of the disordered crystalline phases results in nucleation of small crystallites within the initially large crystal grains. The new crystallites increase in number during continued irradiation until a fine grain structure is formed. Electron diffraction yields a powder-like diffraction pattern that indicates a random alignment of the small crystallites. During a second irradiation at lower temperatures, the small crystallizes retard amorphization. After 2 dpa at high temperatures, the amorphization dose is increased by over twenty times compared to that of initially unirradiated material

  5. ion irradiation

    Swift heavy ions interact predominantly through inelastic scattering while traversing any polymer medium and produce excited/ionized atoms. Here samples of the polycarbonate Makrofol of approximate thickness 20 m, spin coated on GaAs substrate were irradiated with 50 MeV Li ion (+3 charge state). Build-in ...

  6. LET effects of high energy ion beam irradiation on polysilanes

    Seki, Shu; Kanzaki, Kenichi; Tagawa, Seiichi; Yoshida, Yoichi [Osaka Univ., Ibaraki (Japan). Inst. of Scientific and Industrial Research; Kudoh, Hisaaki; Sugimoto, Masaki; Sasuga, Tsuneo; Seguchi, Tadao; Shibata, Hiromi

    1997-03-01

    Thin films of poly(di-n-hexylsilane) were irradiated with 2-20 MeV H{sup +} and He{sup +} ion beams. The beams caused heterogeneous reactions of crosslinking and main chain scission in the films. The relative efficiency of the crosslinking was drastically changed in comparison with that of main chain scission. The anomalous change in the molecular weight distribution was analyzed with increasing irradiation fluence, and the ion beam induced reaction radius; track radius was determined for the radiation sources by the function of molecular weight dispersion. Obtained values were 59{+-}15 A and 14{+-}6 A for 2 MeV He{sup +} and 20 MeV H{sup +} ion beams respectively. (author)

  7. Low energy helium ion irradiation induced nanostructure formation on tungsten surface

    Al-Ajlony, A.; Tripathi, J.K.; Hassanein, A.

    2017-01-01

    We report on the low energy helium ion irradiation induced surface morphology changes on tungsten (W) surfaces under extreme conditions. Surface morphology changes on W surfaces were monitored as a function of helium ion energy (140–300 eV), fluence (2.3 × 10 24 –1.6 × 10 25 ions m −2 ), and flux (2.0 × 10 20 –5.5 × 10 20 ion m −2 s −1 ). All the experiments were performed at 900° C. Our study shows significant effect of all the three ion irradiation parameters (ion flux, fluence, and energy) on the surface morphology. However, the effect of ion flux is more pronounced. Variation of helium ion fluence allows to capture the very early stages of fuzz growth. The observed fuzz growth and morphology changes were understood in the realm of various possible phenomena. The study has relevance and important impact in the current and future nuclear fusion applications. - Highlights: •Reporting formation of W nanostructure (fuzz) due to low energy He ion beam irradiation. •Observing the very early stages for the W-Fuzz formation. •Tracking the surface morphological evolution during the He irradiation. •Discussing in depth our observation and drawing a possible scenario that explain this phenomenon. •Studying various ions irradiation parameters such as flux, fluence, and ions energy.

  8. Low energy helium ion irradiation induced nanostructure formation on tungsten surface

    Al-Ajlony, A., E-mail: montaserajlony@yahoo.com; Tripathi, J.K.; Hassanein, A.

    2017-05-15

    We report on the low energy helium ion irradiation induced surface morphology changes on tungsten (W) surfaces under extreme conditions. Surface morphology changes on W surfaces were monitored as a function of helium ion energy (140–300 eV), fluence (2.3 × 10{sup 24}–1.6 × 10{sup 25} ions m{sup −2}), and flux (2.0 × 10{sup 20}–5.5 × 10{sup 20} ion m{sup −2} s{sup −1}). All the experiments were performed at 900° C. Our study shows significant effect of all the three ion irradiation parameters (ion flux, fluence, and energy) on the surface morphology. However, the effect of ion flux is more pronounced. Variation of helium ion fluence allows to capture the very early stages of fuzz growth. The observed fuzz growth and morphology changes were understood in the realm of various possible phenomena. The study has relevance and important impact in the current and future nuclear fusion applications. - Highlights: •Reporting formation of W nanostructure (fuzz) due to low energy He ion beam irradiation. •Observing the very early stages for the W-Fuzz formation. •Tracking the surface morphological evolution during the He irradiation. •Discussing in depth our observation and drawing a possible scenario that explain this phenomenon. •Studying various ions irradiation parameters such as flux, fluence, and ions energy.

  9. Application of heavy-ion microbeam system at Kyoto University: Energy response for imaging plate by single ion irradiation

    Tosaki, M.; Nakamura, M.; Hirose, M.; Matsumoto, H.

    2011-01-01

    A heavy-ion microbeam system for cell irradiation has been developed using an accelerator at Kyoto University. We have successfully developed proton-, carbon-, fluorine- and silicon-beams in order to irradiate a micro-meter sized area with ion counting, especially single ion irradiation. In the heavy-ion microbeam system, an imaging plate (IP) was utilized for beam diagnostics on the irradiation. The IP is widely used for radiography studies in biology. However, there are a few studies on the low linear energy transfer (LET) by single ions, i.e., low-intensity exposure. Thus we have investigated the energy response for the IP, which can be utilized for microbeam diagnostics.

  10. High-energy xenon ion irradiation effects on the electrical properties of yttrium iron garnet

    Costantini, J.M.; Flament, J.L.; Sinopoli, L.; Trochon, J.; Uzureau, J.L.; Groult, D.; Studer, F.; Toulemonde, M.

    1989-01-01

    Thin monocristalline samples of yttrium iron garnet Y 3 Fe 5 O 12 (YIG) were irradiated at room temperature with 27 MeV/A 132 Xe ions at varying fluences up to 3.5 x 10 12 ions cm -2 . Sample thickness (100 μm) was smaller than the mean projected range of ions (170 μm) so that we were able to study the effects of irradiation damage solely. At such a high ion energy the nuclear energy loss is negligible and damage is mainly due to electronic excitation energy loss. YIG d.c conductivity is found to rise by a factor 40 for the highest dose while the permittivity increases only slightly after irradiation (40% max.). The dielectric losses are also enhanced as the ion fluence increases especially at lower frequencies (by a factor 6 at 10 KHz). No dielectric relaxation peak is observed in the frequency range explored here (10 KHz - 10 MHz)

  11. Effect of low energy electron irradiation on DNA damage by Cu{sup 2+} ion

    Noh, Hyung Ah; Cho, Hyuck [Dept. of Physics, Chungnam National University, Daejeon (Korea, Republic of); Park, Yeun Soo [Plasma Technology Research Center, National Fusion Research Institute, Gunsan (Korea, Republic of)

    2017-03-15

    The combined effect of the low energy electron (LEE) irradiation and Cu{sup 2+} ion on DNA damage was investigated. Lyophilized pBR322 plasmid DNA films with various concentrations (1–15 mM) of Cu{sup 2+} ion were independently irradiated by monochromatic LEEs with 5 eV. The types of DNA damage, single strand break (SSB) and double strand break (DSB), were separated and quantified by gel electrophoresis. Without electron irradiation, DNA damage was slightly increased with increasing Cu ion concentration via Fenton reaction. LEE-induced DNA damage, with no Cu ion, was only 6.6% via dissociative electron attachment (DEA) process. However, DNA damage was significantly increased through the combined effect of LEE-irradiation and Cu ion, except around 9 mM Cu ion. The possible pathways of DNA damage for each of these different cases were suggested. The combined effect of LEE-irradiation and Cu ion is likely to cause increasing dissociation after elevated transient negative ion state, resulting in the enhanced DNA damage. For the decrease of DNA damage at around 9-mM Cu ion, it is assumed to be related to the structural stabilization due to DNA inter- and intra-crosslinks via Cu ion.

  12. Damage growth in Si during self-ion irradiation: A study of ion effects over an extended energy range

    Holland, O.W.; El-Ghor, M.K.; White, C.W.

    1989-01-01

    Damage nucleation/growth in single-crystal Si during ion irradiation is discussed. For MeV ions, the rate of growth as well as the damage morphology are shown to vary widely along the track of the ion. This is attributed to a change in the dominant, defect-related reactions as the ion penetrates the crystal. The nature of these reactions were elucidated by studying the interaction of MeV ions with different types of defects. The defects were introduced into the Si crystal prior to high-energy irradiation by self-ion implantation at a medium energy (100 keV). Varied damage morphologies were produced by implanting different ion fluences. Electron microscopy and ion-channeling measurements, in conjunction with annealing studies, were used to characterize the damage. Subtle changes in the predamage morphology are shown to result in markedly different responses to the high-energy irradiation, ranging from complete annealing of the damage to rapid growth. These divergent responses occur over a narrow range of dose (2--3 times 10 14 cm -2 ) of the medium-energy ions; this range also marks a transition in the growth behavior of the damage during the predamage implantation. A model is proposed which accounts for these observations and provides insight into ion-induced growth of amorphous layers in Si and the role of the amorphous/crystalline interface in this process. 15 refs, 9 figs

  13. Development of an intermediate energy heavy-ion micro-beam irradiation system

    Song Mingtao; Wang Zhiguang; He Yuan; Gao Daqing; Yang Xiaotian; Liu Jie; Su Hong; Man Kaidi; Sheng Li'na

    2008-01-01

    The micro-beam irradiation system, which focuses the beam down the micron order and precisely delivers a predefined number of ions to a predefined spot of micron order, is a powerful tool for radio-biology, radio-biomedicine and micromachining. The Institute of Modern Physics of Chinese Academy of Sciences is developing a heavy-ion micro-beam irradiation system up to intermediate energy. Based on the intermediate and low energy beam provided by Heavy Ion Research Facility of Lanzhou, the micro-beam system takes the form of the magnetic focusing. The heavy-ion beam is conducted to the basement by a symmetrical achromatic system consisting of two vertical bending magnets and a quadrupole in between. Then a beam spot of micron order is formed by magnetic triplet quadrupole of very high gradient. The sample can be irradiated either in vacuum or in the air. This system will be the first opening platform capable of providing heavy ion micro-beam, ranging from low (10 MeV/u) to intermediate energy (100 MeV/u), for irradiation experiment with positioning and counting accuracy. Target material may be biology cell, tissue or other non-biological materials. It will be a help for unveiling the essence of heavy-ion interaction with matter and also a new means for exploring the application of heavy-ion irradiation. (authors)

  14. Investigation of structural materials of reactors using high-energy heavy-ion irradiations

    Wang Zhiguang

    2007-01-01

    Radiation damage in structural materials of fission/fusion reactors is mainly attributed to the evolution of intensive atom displacement damage induced by energetic particles (n, α and/or fission fragments) and high-rate helium doping by direct α particle bombardments and/or (n, α) reactions. It can cause severe degradation of reactor structural materials such as surface blistering, bulk void swelling, deformation, fatigue, embrittlement, stress erosion corrosion and so on that will significantly affect the operation safety of reactors. However, up to now, behavior of structural materials at the end of their service can hardly be fully tested in a real reactor. In the present work, damage process in reactor structural materials is briefly introduced, then the advantages of energetic ion implantation/irradiation especially high-energy heavy ion irradiation are discussed, and several typical examples on simulation of radiation effects in reactor candidate structural materials using high-energy heavy ion irradiations are pronounced. Experimental results and theoretical analysis suggested that irradiation with energetic particles especially high-energy heavy ions is very useful technique for simulating the evolution of microstructures and macro-properties of reactor structural materials. Furthermore, an on-going plan of material irradiation experiments using high energy H- and He-ions based on the Heavy Ion Research Facilities in Lanzhou (HIRFL) is also briefly interpreted. (authors)

  15. Production of nanodiamonds by high-energy ion irradiation of graphite at room temperature

    Daulton, T.L.; Kirk, M.A.; Lewis, R.S.; Rehn, L.E.

    2001-01-01

    It has previously been shown that graphite can be transformed into diamond by MeV electron and ion irradiation at temperatures above approximately 600 deg. C. However, there exists geological evidence suggesting that carbonaceous materials can be transformed to diamond by irradiation at substantially lower temperatures. For example, submicron-size diamond aggregates have been found in uranium-rich, Precambrian carbonaceous deposits that never experienced high temperature or pressure. To test if diamonds can be formed at lower irradiation temperatures, sheets of fine-grain polycrystalline graphite were bombarded at 20 deg. C with 350±50 MeV Kr ions to fluences of 6x10 12 cm -2 using the Argonne tandem linear accelerator system (ATLAS). Ion-irradiated (and unirradiated control) graphite specimens were then subjected to acid dissolution treatments to remove untransformed graphite and isolate diamonds that were produced; these acid residues were subsequently characterized by high-resolution and analytical electron microscopy. The acid residue of the ion-irradiated graphite was found to contain nanodiamonds, demonstrating that ion irradiation of graphite at ambient temperature can produce diamond. The diamond yield under our irradiation conditions is low, ∼0.01 diamonds/ion. An important observation that emerges from comparing the present result with previous observations of diamond formation during irradiation is that nanodiamonds form under a surprisingly wide range of irradiation conditions. This propensity may be related to the very small difference in the graphite and diamond free-energies coupled with surface-energy considerations that may alter the relative stability of diamond and graphite at nanometer sizes

  16. Photoluminescence and reflectivity studies of high energy light ions irradiated polymethyl methacrylate films

    Bharti, Madhu Lata; Singh, Fouran; Ramola, R. C.; Joshi, Veena

    2017-11-01

    The self-standing films of non-conducting polymethyl methacrylate (PMMA) were irradiated in vacuum using high energy light ions (HELIs) of 50 MeV Lithium (Li+3) and 80 MeV Carbon (C+5) at various ion dose to induce the optical changes in the films. Upon HELI irradiation, films exhibit a significant enhancement in optical reflectivity at the highest dose. Interestingly, the photoluminescence (PL) emission band with green light at (514.5 nm) shows a noticeable increase in the intensity with increasing ion dose for both ions. However, the rate of increase in PL intensity is different for both HELI and can be correlated with the linear energy transfer by these ions in the films. Origin of PL is attributed to the formation of carbon cluster and hydrogenated amorphous carbon in the polymer films. HAC clusters act as PL active centres with optical reflectivity. Most of the harmful radiation like UV are absorbed by the material and is becoming opaque after irradiation and this PL active material are useful in fabrication of optoelectronic devices, UV-filter, back-lit components in liquid crystal display systems, micro-components for integrate optical circuits, diffractive elements, advanced materials and are also applicable to the post irradiation laser treatment by means of ion irradiation.

  17. Hardness enhancement and crosslinking mechanisms in polystyrene irradiated with high energy ion-beams

    Lee, E.H.; Rao, G.R.; Mansur, L.K.

    1996-01-01

    Surface hardness values several times larger than steel were produced using high energy ion beams at several hundred keV to MeV. High LET is important for crosslinking. Crosslinking is studied by analyzing hardness variations in response to irradiation parameter such as ion species, energy, and fluence. Effective crosslinking radii at hardness saturation are derived base on experimental data for 350 keV H + and 1 MeV Ar + irradiation of polystyrene. Saturation value for surface hardness is about 20 GPa

  18. Radiation stability of nanocrystalline ZrN coatings irradiated with high energy Xe and Bi ions

    Skuratov, V.A.; Sokhatsky, A.S.; Uglov, V.V.; Zlotski, S.V.; Van Vuuren, A.J.; Neethling, Jan; O'Connell, J.

    2011-01-01

    Swift Xe and Bi ion irradiation effects in nanocrystalline ZrN coatings as a function of ion fluence are reported. Zirconium nitride films of different thickness (0.1, 3, 10 and 20 micrometers) synthesized by vacuum arc-vapour deposition in nanocrystalline state (average size of crystallites is ∼4 nm) were irradiated with 167 MeV Xe and 695 MeV Bi ions to fluences in the range 3x10 12 ÷2.6x10 15 cm -2 (Xe) and 10 12 x10 13 cm -2 (Bi) and studied using XRD and TEM techniques. No evidence of amorphization due to high level ionizing energy losses has been found. The measurements of lattice parameter have revealed nonmonotonic dependence of the stress level in irradiated samples on ion fluence. (authors)

  19. Radiation blistering of niobium in sequence irradiated by helium ions with different energy

    Das, S.K.; Kaminskij, M.S.; Guseva, M.I.; Gusev, V.M.; Krasulin, Yu.L.; Martynenko, Yu.V.; Rozina, I.A.

    1977-01-01

    The results of the investigation of the blistering of the surface of polycrystalline niobium foils subjected to successive irradiation by helium ions of energies of 3 to 50 keV are reported. The critical doses of irradiation, the types of blisters and the rate of erosion were determined. A comparative analysis of the formation of blisters on cold-rolled and annealed niobium has been made. On cold-rolled niobium the blistering is mainly due to ions with energies of 3 to 80 keV, on annealed niobium of 100 to 500 keV. The erosion of cold-rolled niobium takes place through blisters formed by the action of helium ions with energies of the order of 45 keV, and that of annealed niobium, through helium ions with energies of 100 to 500 keV. The observed differences in the formation of blisters on niobium irradiated with helium ions of a wide range of energies are explained by the change in the diffusion kinetics of implanted ions having a uniform distribution across the thickness of the target

  20. Changes in the surface electronic states of semiconductor fine particles induced by high energy ion irradiation

    Yamaki, Tetsuya; Asai, Keisuke; Ishigure, Kenkichi [Tokyo Univ. (Japan); Shibata, Hiromi

    1997-03-01

    The changes in the surface electronic states of Q-sized semiconductor particles in Langmuir-Blodgett (LB) films, induced by high energy ion irradiation, were examined by observation of ion induced emission and photoluminescence (PL). Various emission bands attributed to different defect sites in the band gap were observed at the initial irradiation stage. As the dose increased, the emissions via the trapping sites decreased in intensity while the band-edge emission developed. This suggests that the ion irradiation would remove almost all the trapping sites in the band gap. The low energy emissions, which show a multiexponential decay, were due to a donor-acceptor recombination between the deeply trapped carriers. It was found that the processes of formation, reaction, and stabilization of the trapping sites would predominantly occur under the photooxidizing conditions. (author)

  1. High dose radiation damage in nuclear energy structural materials investigated by heavy ion irradiation simulation

    Zheng Yongnan; Xu Yongjun; Yuan Daqing

    2014-01-01

    Structural materials in ITER, ADS and fast reactor suffer high dose irradiations of neutrons and/or protons, that leads to severe displacement damage up to lOO dpa per year. Investigation of radiation damage induced by such a high dose irradiation has attracted great attention along with the development of nuclear energy facilities of new generation. However, it is deeply hampered for the lacking of high dose neutron and proton sources. Irradiation simulation of heavy ions produced by accelerators opens up an effective way for laboratory investigation of high dose irradiation induced radiation damage encountered in the ITER, ADS, etc. Radiation damage is caused mainly by atomic displacement in materials. The displacement rate of heavy ions is about lO 3 ∼10 7 orders higher than those of neutrons and protons. High displacement rate of heavy ions significantly reduces the irradiation time. The heavy ion irradiation simulation technique (HIIS) technique has been developed at China Institute of Atomic Energy and a series of the HIIS experiments have been performed to investigate radiation damage in stainless steels, tungsten and tantalum at irradiation temperatures from room temperature to 800 ℃ and in the irradiation dose region up to 100 dpa. The experimental results show that he radiation swelling peak for the modified stainless steel appears in the temperature region around 580 ℃ and the radiation damage is more sensitive to the temperature, the size of the radiation induced vacancy cluster or void increase with the increasing of the irradiation dose, and among the three materials the home-made modified stainless steel has the best radiation resistant property. (authors)

  2. Electrophoresis examination of strand breaks in plasmid DNA induced by low-energy nitrogen ion irradiation

    Zhao Yong; Tan Zheng; Du Yanhua; Qiu Guanying

    2003-01-01

    To study the effect on plasmid DNA of heavy ion in the energy range of keV where nuclear stopping interaction becomes more important or even predominant, thin film of plasmid pGEM-3Zf(-) DNA was prepared on aluminum surface and irradiated in vacuum ( -3 Pa) by low-energy nitrogen ions with energy of 30 keV (LET=285 keV/μm) at various fluence ranging from 2 x 10 10 to 8.2 x 10 13 ions/cm 2 . DNA strand breaks were analyzed by neutral electrophoresis followed by quantification with image analysis software. Low-energy nitrogen ion irradiation induced single-, double- and multiple double-strand breaks (DSB) and multiple DSB as the dominating form of DNA damages. Moreover, the linear fluence-response relationship at a low fluence range suggests that DSBs are induced predominantly by single ion track. However, strand break production is limited to a short range in the irradiated samples

  3. Electrolyte penetration into high energy ion irradiated polymers

    Fink, D.; Petrov, A.; Müller, M.; Asmus, T.; Hnatowicz, Vladimír; Vacík, Jiří; Červená, Jarmila

    158/159 (2002), s. 228-233 ISSN 0257-8972 R&D Projects: GA AV ČR KSK1010104; GA ČR GA102/01/1324 Keywords : polymers * ion bombardment * defects * diffusion * nanostructrure Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.267, year: 2002

  4. Electronic energy loss of the latent track in heavy ion-irradiated polyimide

    Sun Youmei; Liu Jie; Zhang Chonghong; Wang Zhiguang; Jin Yunfan; Duan Jinglai; Song Yin

    2005-01-01

    In the interaction process of a swift heavy ion (SHI) and polymer, a latent track with radius of several nanometers appears near the ion trajectory due to the dense ionization and excitation. To describe the role of electronic energy loss (dE/dX) e , multi-layer stacks (with different dE/dX) of polyimide (PI) films were irradiated by different SHIs (1.158 GeV Fe 56 and 1.755 GeV Xe 136 ) under vacuum at room temperature. Chemical changes of modified PI films were studied by Fourier Transform Infrared (FTIR) spectroscopy. The main feature of SHI irradiation is the degradation of the functional group and creation of alkyne. The chain disruption rate of PI was investigated in the fluence range from 1 x 10 11 to 6 x 10 12 ions/cm 2 and a wider energy stopping power range (2.2 to 5.2 keV/nm for Fe 56 ions and 8.6 to 11.3 keV/nm for Xe 136 ions). Alkyne formation was observed over the electronic energy loss range of interest. Assuming the saturated track model (the damage process only occur in a cylinder of area σ), the mean degradation and alkyne formation radii in tracks were deduced for Fe and Xe ion irradiation, respectively. The results were validated by the thermal spike model and the threshold electronic energy loss of track formation S et in PI was deduced. The analysis of the irradiated PI films shows that the predictions of the thermal spike model are in qualitative agreement with the curve shape of experimental results. (authors)

  5. Plant height revertants of Dominant Semidwarf mutant rice created by low-energy ion irradiation

    Liu Binmei [Key Laboratory of Ion Beam Bioengineering, Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Wu Yuejin [Key Laboratory of Ion Beam Bioengineering, Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China)], E-mail: yjwu@ipp.ac.cn; Xu Xue; Song, M.; Zhao, M. [Key Laboratory of Ion Beam Bioengineering, Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Fu, X.D. [Institute of Genetics and Developmental Biology, Chinese Academy of Sciences, Beijing 100101 (China)

    2008-04-15

    Dominant Semidwarf mutant rice (Sdd) was obtained from its wild type (WT) by irradiation with a low-energy ion beam. Six tall revertants of Sdd were induced by irradiation. The revertants restored the plant height to that of WT plants. Investigation of the agronomic character and genetic analysis indicate that the revertants are similar to WT plants with putative different inherited mutations. The revertants were checked for DNA differences using the simple sequence repeat technique. Among 408 such primers used, only 2 primers detected mutation sites in the revertants, which provided the molecular evidence for the revertants induced from Sdd. This study indicates that ion irradiation may be used as a mutagen to create revertants for plant architecture studies and could be a new application.

  6. Hardening of ODS ferritic steels under irradiation with high-energy heavy ions

    Ding, Z. N.; Zhang, C. H.; Yang, Y. T.; Song, Y.; Kimura, A.; Jang, J.

    2017-09-01

    Influence of the nanoscale oxide particles on mechanical properties and irradiation resistance of oxide-dispersion-strengthened (ODS) ferritic steels is of critical importance for the use of the material in fuel cladding or blanket components in advanced nuclear reactors. In the present work, impact of structures of oxide dispersoids on the irradiation hardening of ODS ferritic steels was studied. Specimens of three high-Cr ODS ferritic steels containing oxide dispersoids with different number density and average size were irradiated with high-energy Ni ions at about -50 °C. The energy of the incident Ni ions was varied from 12.73 MeV to 357.86 MeV by using an energy degrader at the terminal so that a plateau of atomic displacement damage (∼0.8 dpa) was produced from the near surface to a depth of 24 μm in the specimens. A nanoindentor (in constant stiffness mode with a diamond Berkovich indenter) and a Vickers micro-hardness tester were used to measure the hardeness of the specimens. The Nix-Gao model taking account of the indentation size effect (ISE) was used to fit the hardness data. It is observed that the soft substrate effect (SSE) can be diminished substantially in the irradiated specimens due to the thick damaged regions produced by the Ni ions. A linear correlation between the nano-hardeness and the micro-hardness was found. It is observed that a higher number density of oxide dispersoids with a smaller average diameter corresponds to an increased resistance to irradiation hardening, which can be ascribed to the increased sink strength of oxides/matrix interfaces to point defects. The rate equation approach and the conventional hardening model were used to analyze the influence of defect clusters on irradiation hardening in ODS ferritic steels. The numerical estimates show that the hardening caused by the interstitial type dislocation loops follows a similar trend with the experiment data.

  7. Radiation effects and damage formation in semiconductors due to high-energy ion irradiation

    Kamarou, A.

    2006-11-07

    The object of this thesis was the study of ion-beam induced damage formation and annealing in crystalline and conventionally predamaged Ge, GaAs, and InP. The samples were irradiated either at {approx}80 K or at room temperature with Kr, Xe, or Au ions with specific energy of about 0.3 MeV/u to 3 MeV/u. Thereafter the samples were studied by means of Rutherford backscattering spectroscopy and/or transmission electron microscopy.

  8. Radiation effects and damage formation in semiconductors due to high-energy ion irradiation

    Kamarou, A.

    2006-01-01

    The object of this thesis was the study of ion-beam induced damage formation and annealing in crystalline and conventionally predamaged Ge, GaAs, and InP. The samples were irradiated either at ∼80 K or at room temperature with Kr, Xe, or Au ions with specific energy of about 0.3 MeV/u to 3 MeV/u. Thereafter the samples were studied by means of Rutherford backscattering spectroscopy and/or transmission electron microscopy

  9. Contrast of dry and water-saturated arabidopsis seeds irradiated by MeV energy ions

    Mei Tao; Qin Huaili; Xue Jianming; Wang Yugang

    2007-01-01

    The dry and water-saturated seeds of Arabidopsis thaliana were irradiated by H + ions with 6.5 MeV in atmosphere. The ion fluence used in this experiment was in the range of 4 x 10 9 -1 x 10 14 ions/cm 2 . According to the structure of the seed and TRIM simulation, the ions with the energy of 6.5 MeV can penetrate the whole seed. The experiment shows that the fluence-response curves for the dry seeds and water-saturated seeds had distinct shoulders and reduced rapidly. The experimental results show that the water-imbibed seeds were more sensitive than the dry seeds and the reason is from free radicals reaction. A model has been constructed, and primely simulates the experiment data. (authors)

  10. Formation of nanostructures on HOPG surface in presence of surfactant atom during low energy ion irradiation

    Ranjan, M., E-mail: ranjanm@ipr.res.in; Joshi, P.; Mukherjee, S.

    2016-07-15

    Low energy ions beam often develop periodic patterns on surfaces under normal or off-normal incidence. Formation of such periodic patterns depends on the substrate material, the ion beam parameters, and the processing conditions. Processing conditions introduce unwanted contaminant atoms, which also play strong role in pattern formation by changing the effective sputtering yield of the material. In this work we have analysed the effect of Cu, Fe and Al impurities introduced during low energy Ar{sup +} ion irradiation on HOPG substrate. It is observed that by changing the species of foreign atoms the surface topography changes drastically. The observed surface topography is co-related with the modified sputtering yield of HOPG. Presence of Cu and Fe amplify the effective sputtering yield of HOPG, so that the required threshold for the pattern formation is achieved with the given fluence, whereas Al does not lead to any significant change in the effective yield and hence no pattern formation occurs.

  11. Fractal characteristics of fracture morphology of steels irradiated with high-energy ions

    Xian, Yongqiang; Liu, Juan [Institute of Modern Physics, Chinese Academy of Science, Lanzhou 730000 (China); University of Chinese Academy of Science, Beijing 100049 (China); Zhang, Chonghong, E-mail: c.h.zhang@impcas.ac.cn [Institute of Modern Physics, Chinese Academy of Science, Lanzhou 730000 (China); Chen, Jiachao [Paul Scherrer Institute, Villigen PSI (Switzerland); Yang, Yitao; Zhang, Liqing; Song, Yin [Institute of Modern Physics, Chinese Academy of Science, Lanzhou 730000 (China)

    2015-06-15

    Highlights: • Fractal dimensions of fracture surfaces of steels before and after irradiation were calculated. • Fractal dimension can effectively describe change of fracture surfaces induced by irradiation. • Correlation of change of fractal dimension with embrittlement of irradiated steels is discussed. - Abstract: A fractal analysis of fracture surfaces of steels (a ferritic/martensitic steel and an oxide-dispersion-strengthened ferritic steel) before and after the irradiation with high-energy ions is presented. Fracture surfaces were acquired from a tensile test and a small-ball punch test (SP). Digital images of the fracture surfaces obtained from scanning electron microscopy (SEM) were used to calculate the fractal dimension (FD) by using the pixel covering method. Boundary of binary image and fractal dimension were determined with a MATLAB program. The results indicate that fractal dimension can be an effective parameter to describe the characteristics of fracture surfaces before and after irradiation. The rougher the fracture surface, the larger the fractal dimension. Correlation of the change of fractal dimension with the embrittlement of the irradiated steels is discussed.

  12. Momenta of particles emitted by target at intensive irradiation by low-energy ions

    Beshenkov, V G; Marchenko, V A

    2002-01-01

    One measured the aggregate momenta of the target emitted particles at the intensive sputtering by E sub 0 approx = 0.5 keV energy heavy inert gases. For liquid and being under premelting temperature Ga target the measured values are close to the expected momenta of sputtered metallic atoms and reflection ions, for Cu and Zr targets they are essentially higher. One assumes that sputtering of atoms of gas-diffuser implanted into the target causes the surplus momentum. The estimated average energy of these atoms approx = 20 eV. Under Ga irradiation the implanted atoms diffuse mainly towards the surface and are desorbed

  13. Self-organization processes and nanocluster formation in crystal lattices by low-energy ion irradiation

    Tereshko, I.; Abidzina, V.; Tereshko, A.; Glushchenko, V.; Elkin, I.

    2007-01-01

    The goal of this paper is to study self-organization processes that cause nanostructural evolution in nonlinear crystal media. The subjects of the investigation were nonlinear homogeneous and heterogeneous atom chains. The method of computer simulation was used to investigate the interaction between low-energy ions and crystal lattices. It was based on the conception of three-dimensional lattice as a nonlinear atom chain system. We showed that that in homogeneous atom chains critical energy needed for self-organization processes development is less than for nonlinear atom chain with already embedded clusters. The possibility of nanostructure formation was studied by a molecular dynamics method of nonlinear oscillations in atomic oscillator systems of crystal lattices after their low-energy ion irradiation. (authors)

  14. High energy (MeV) ion-irradiated π-conjugated polyaniline: Transition from insulating state to carbonized conducting state

    Park, S.K.; Lee, S.Y.; Lee, C.S.; Kim, H.M.; Joo, J.; Beag, Y.W.; Koh, S.K.

    2004-01-01

    High energy (MeV) C 2+ , F 2+ , and Cl 2+ ions were irradiated onto π-conjugated polyaniline emeraldine base (PAN-EB) samples. The energy of an ion beam was controlled to a range of 3-4.5 MeV, with the ion dosage varying from 1x10 12 to 1x10 16 ions/cm 2 . The highest dc conductivity (σ dc ) at room temperature was measured to be ∼60 S/cm for 4.5 MeV Cl 2+ ion-irradiated PAN-EB samples with a dose of 1x10 16 ions/cm 2 . We observed the transition of high energy ion-irradiated PAN-EB samples from insulating state to conducting state as a function of ion dosage based on σ dc and its temperature dependence. The characteristic peaks of the Raman spectrum of the PAN-EB samples were reduced, while the D-peak (disordered peak) and the G peak (graphitic peak) appeared as the ion dose increased. From the analysis of the D and G peaks of the Raman spectra of the systems compared to multiwalled carbon nanotubes, ion-irradiated graphites, and annealed carbon films, the number of the clusters of hexagon rings with conducting sp 2 -bonded carbons increased with ion dosage. We also observed the increase in the size of the nanocrystalline graphitic domain of the systems with increasing ion dosage. The intensity of normalized electron paramagnelic resonance signal also increased in correlation with ion dose. The results of this study demonstrate that π-conjugated pristine PAN-EB systems changed from insulating state to carbonized conducting state through high energy ion irradiation with high ion dosage

  15. Tuning surface porosity on vanadium surface by low energy He{sup +} ion irradiation

    Tripathi, J.K., E-mail: jtripat@purdue.edu; Novakowski, T.J.; Hassanein, A.

    2016-08-15

    Highlights: • Surface nanostructuring on vanadium surface using novel He{sup +} ion irradiation process. • Tuning surface-porosity using high-flux, low-energy He{sup +} ion irradiation at constant elevated sample temperature (823–173 K). • Presented top-down approach guarantees good contact between different crystallites. • Sequential significant enhancement in surface-pore edge size (and corresponding reduction in surface-pore density) with increasing sample temperature. - Abstract: In the present study, we report on tuning the surface porosity on vanadium surfaces using high-flux, low-energy He{sup +} ion irradiation as function of sample temperature. Polished, mirror-finished vanadium samples were irradiated with 100 eV He{sup +} ions at a constant ion-flux of 7.2 × 10{sup 20} ions m{sup −2} s{sup −1} for 1 h duration at constant sample temperatures in the wide range of 823–1173 K. Our results show that the surface porosity of V{sub 2}O{sub 5} (naturally oxidized vanadium porous structure, after taking out from UHV) is strongly correlated to the sample temperature and is highly tunable. In fact, the surface porosity significantly increases with reducing sample temperature and reaches up to ∼87%. Optical reflectivity on these highly porous V{sub 2}O{sub 5} surfaces show ∼0% optical reflectivity at 670 nm wavelength, which is very similar to that of “black metal”. Combined with the naturally high melting point of V{sub 2}O{sub 5}, this very low optical reflectivity suggests potential application in solar power concentration technology. Additionally, this top-down approach guarantees relatively good contact between the different crystallites and avoids electrical conductivity limitations (if required). Since V{sub 2}O{sub 5} is naturally a potential photocatalytic material, the resulting sub-micron-sized cube-shaped porous structures could be used in solar water splitting for hydrogen production in energy applications.

  16. EPR and cathodoluminescence of defects in diamond irradiated by nickel ions with energy of 335 MeV

    Varichenko, V.S.; Martinovich, V.A.; Filipp, A.Z.; Didyk, A.Yu.

    1995-01-01

    Defect production in natural diamond irradiated by 335 MeV Ni ions within a dose range of 5·10 12 - 5·10 14 cm -2 has been studied by EPR and cathodoluminescence techniques. It is shown that the high energy ion irradiation leads to the appearance of modified track like one-dimensional structures with nontetrahedral coordination of atoms. A mechanism of microwave conductivity in modified structures of irradiated samples discussed in frame of a model of mobile quasi-particles of corresponding paramagnetic centres. Peculiarities of concentration distributions of paramagnetic centres corresponding to ion-modified structures and cathodoluminescence centres through the irradiated layer are connected with track channeling and stopped of a part of ions because of their elastic collisions with lattice atoms during ion stopping. (author). 18 refs., 5 figs

  17. The effect of carbon impurities on molybdenum surface morphology evolution under high-flux low-energy helium ion irradiation

    Tripathi, J.K.; Novakowski, T.J.; Gonderman, S.; Bharadwaj, N.; Hassanein, A.

    2016-01-01

    We report on the role of carbon (C) impurities, in molybdenum (Mo) fuzz evolutions on Mo surface during 100 eV He + ion irradiations. In this study we considered 0.01, 0.05, and 0.5% C + ion impurities in He + ion irradiations. For introducing such tiny C + ion impurities, gas mixtures of He and CH 4 have been chosen in following ratios; 99.95: 0.05, 99.75: 0.25, and 97.5: 2.5. Apart from these three cases, two additional cases, 100% He + ion (for Mo fuzz growth due to only He + ions) and 100% H + ion (for confirming the significance of tiny 0.04–2.0% H + ions in terms of Mo fuzz evolutions on Mo surface, if any), have also been considered. Ion energy (100 eV), ion fluence (2.6 × 10 24  ions m −2 ), and target temperature (923 K) were kept constant for each experiment and their selections were based on our previous studies [1,2]. Our study shows homogeneously populated and highly dense Mo fuzz evolutions on entire Mo surface for 100% He + ion irradiation case. Enhancement of C + ion impurities in He + ions causes a sequential reduction in Mo fuzz evolutions, leading to almost complete prevention of Mo fuzz evolutions for 0.5% C + ion impurity concentrations. Additionally, no fuzz formation for 100% H + ion irradiation at all, were seen (apart from some tiny nano-structuring, in very limited regions). This indicates that there is no significant role of H + ions in Mo fuzz evolutions (at least for such tiny amount, 0.04–2.0% H + ions). The study is significant to understand the behavior of potential high-Z plasma facing components (PFCs), in the, presence of tiny amount of C impurities, for nuclear fusion relevant applications. - Highlights: • Mo Fuzz evolutions due to low-energy high-flux 100% He + ion irradiation. • Sequential reduction in Mo fuzz evolutions with increasing C + ion impurities in He + ions. • Almost complete prevention of Mo fuzz evolutions for 0.5% C + ion impurity in He + ions. • No Mo fuzz formation for 100% H + ion

  18. DLTS spectra of silicon diodes with p+-n-junction irradiated with high energy krypton ions

    Nikolai A. Poklonski

    2016-06-01

    Full Text Available p+-n-Diodes have been studied. The diodes were manufactured on wafers (thickness 460 μm, (111 plane of uniformly phosphorus doped float-zone-grown single-crystal silicon. The resistivity of silicon was 90 Ω cm and the phosphorus concentration was 5×1013 cm−3. The diodes were irradiated with 250 MeV krypton ions. The irradiation fluence was 108 cm−2. Deep-level transient spectroscopy (DLTS was used to examine the defects induced by high energy krypton ion implantation. The DLTS spectra were recorded at a frequency of 1 MHz in the 78–290 K temperature range. The capacity-voltage characteristics have been measured at a reverse bias voltage from 0 to −19 V at a frequency of 1 MHz. We show that the main irradiation-induced defects are A-centers and divacancies. The behavior of DLTS spectra in the 150–260 K temperature range depends essentially on the emission voltage Ue. The variation of Ue allows us to separate the contributions of different defects into the DLTS spectrum in the 150–260 K temperature range. We show that, in addition to A-centers and divacancies, irradiation produces multivacancy complexes with the energy level Et = Ec−(0.5±0.02 eV and an electron capture cross section of ~4×10–13 cm2.

  19. Depth profiling by Raman spectroscopy of high-energy ion irradiated silicon carbide

    Wang, Xu; Zhang, Yanwen; Liu, Shiyi; Zhao, Ziqiang, E-mail: zqzhao@pku.edu.cn

    2014-01-15

    Single crystals of 6H–SiC were irradiated at room temperature with 20 MeV carbon ions at fluences of 1.5 × 10{sup 15} and 6.0 × 10{sup 15} cm{sup −2}. Raman measurements were performed to study irradiation induced damage and the in-depth damage profile of SiC. A clear change of damage from the surface down to the stopping region of carbon ions as simulated by SRIM is exhibited. The affected area as detected by Raman is in good agreement with SRIM predictions while a little shallower dpa profile is observed. The partial disorder defined in the present work as a function of depth is demonstrated. A shift of the position of the TO peak towards lower wavenumbers with in-depth damage and then to higher wavenumbers beyond the most damaged region indicates that tensile strain due to defects has a backward V-curve distribution. The damaged layer is subjected to a compressive in-plane stress associated with the out-of-plane strain and the magnitude of this stress also has a backward V-curve depth profile. The evolution of line width of the TO peak with depth clearly shows the density of defects reaches the higher level at the most damaged region. The Raman spectroscopy scanning technique is proved to be a powerful tool for profiling of crystal damage induced by high-energy ion implantation.

  20. Influence of high energy ion irradiation on fullerene derivative (PCBM) thin films

    Sharma, Trupti, E-mail: tsphy91@gmail.com [Department of Physics, Malaviya National Institute of Technology, Jaipur 302017 (India); Singhal, Rahul; Vishnoi, Ritu [Department of Physics, Malaviya National Institute of Technology, Jaipur 302017 (India); Lakshmi, G.B.V.S. [Inter University Accelerator Centre, Post Box No. 10502, New Delhi 110067 (India); Biswas, S.K. [Department of Metallurgical and Materials Engineering, Malaviya National Institute of Technology, Jaipur 302017 (India)

    2017-04-01

    Highlights: • Spin casted PCBM thin films (∼100 nm) are irradiated with 55 MeV Si{sup 4+} ion beam. • The decrease in band gap is observed after irradiation. • The surface properties is also dependent on incident ion fluences. • Polymerization reactions induced by energetic ions leads to modifications. - Abstract: The modifications produced by 55 MeV Si{sup 4+} swift heavy ion irradiation on the phenyl C{sub 61} butyric acid methyl ester (PCBM) thin films (thickness ∼ 100 nm) has been enlightened. The PCBM thin films were irradiated at 1 × 10{sup 10}, 1 × 10{sup 11} and 1 × 10{sup 12} ions/cm{sup 2} fluences. After ion irradiation, the decreased optical band gap and FTIR band intensities were observed. The Raman spectroscopy reveals the damage produced by energetic ions. The morphological variation were investigated by atomic force microscopy and contact angle measurements and observed to be influenced by incident ion fluences. After 10{sup 11} ions/cm{sup 2} fluence, the overlapping of ion tracks starts and produced overlapping effects.

  1. Multiple relaxation processes in high-energy ion irradiated kapton-H polyimide: Thermally stimulated depolarization current study

    Garg, Maneesha; Quamara, J.K.

    2006-01-01

    High-energy ion irradiation effects on the thermally stimulated depolarization current (Tdc) behaviour of kapton-H samples (12.5 μm) irradiated with 50 MeV Li ion (fluence 5 x 10 4 , 10 5 and 5 x 10 5 ions/cm 2 ) have been investigated. The TSDC spectra of the irradiated samples reveal that the β-peak (appearing around 80-110 deg. C) associated with dipolar relaxation has been significantly affected owing to the demerization of carbonyl groups due to irradiation. The TSDC spectra also reveal a new relaxation process (termed as γ-relaxation) around 30 deg. C, due to increased water absorptivity in irradiated samples. The peak around 200 deg. C (α-peak) associated with space charge relaxation process also shows a behavioural change with ion irradiation. The peak not only shifts towards the higher temperature with increasing fluence but also show an increase in its activation energy (0.33-0.99 eV) with increasing polarizing field. The creation of new deep energy trap centers due to the formation of conjugated bonds after irradiation is responsible for this modification. The Cole-Cole distribution curves show the formation of new sub-polar group with different characteristic relaxation time

  2. High energy ion irradiation effects on polymer materials. LET dependence of G value of scission of polymethylmethacrylate (PMMA)

    Kudoh, H; Sasuga, T; Seguchi, T [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

    1997-03-01

    Linear energy transfer (LET) dependence on the probability of main chain scission of polymethylmethacrylate (PMMA) was investigated. The probability was obtained from decreases in molecular weight measured by the gel permeation chromatography (GPC), and LET was evaluated by TRIM code. The scission probability as a function of LET was almost constant in the low LET, and decreased in the high LET ion irradiation. The mechanism was interpreted from the model of spur-overlapping along an ion`s path. (author)

  3. Observation of transient lattice vacancies produced during high-energy ion irradiation of Ni foils

    Tsuchida, Hidetsugu; Iwai, Takeo; Awano, Misa; Kishida, Mutsumi; Katayama, Ichiro; Jeong, Sun-Chang; Ogawa, Hidemi; Sakamoto, Naoki; Komatsu, Masao; Itoh, Akio

    2007-01-01

    Real-time positron annihilation spectroscopy has been applied for the first time for the investigation of lattice vacancies produced during ion irradiation. Measurements were performed for thin nickel foils irradiated with 2.5 MeV C ions. Doppler broadenings of positron annihilation γ-rays were measured alternately during beam-on and beam-off conditions. It was found that the Doppler broadening line-shape parameter measured during irradiation is larger than those obtained before and after irradiation. This evidently implies that transient or non-survivable vacancy defects are produced during ion irradiation. On the other hand, no such significant change in the line-shape parameter was observed for other face-centred-cubic metal forms of aluminium

  4. Effects of irradiation with low-energy nitrogen ion injection on root tip cells of broad bean

    Huang Yaqin; Li Jinzhe; Huang Qunce

    2012-01-01

    In order to study the cytogenetic effects of low-energy nitrogen ion irradiation, broad bean seed embryo was irradiated by different doses of nitrogen ions. Micronucleus rate, mitotic index and chromosome aberration in root-tip cells were analyzed. The results showed that the injection of ions inhibited mitosis of root tip cells, interfered the normal process of mitosis, caused aberrations of chromosome structure, behavior and number. The frequency of micronucleus and chromosomal aberrations increased with the increasing radiation dosage, while mitotic index decreased. (authors)

  5. Ion-channeling analysis of As relocation in heavily doped Si:As irradiated with high-energy ions

    Lulli, G.; Albertazzi, E.; Bianconi, M.; Ferri, M.

    2003-01-01

    Silicon on insulator layers doped with 8x10 20 As cm -3 and thermally equilibrated at 1100 deg. C, have been irradiated with 2 MeV Si + ions. Rutherford backscattering-channeling analysis shows an increase in As disorder upon irradiation significantly larger than the increase in Si disorder, while electrical measurements show a large decrease in electrical activation. Monte Carlo simulation of channeling angular scans suggests that the enhanced As disorder effect is due to the preferential relocation of dopant atoms slightly displaced from lattice sites, which appear the main reason responsible for the electrical deactivation in the unirradiated sample and are believed to be in the form of As-vacancy clusters. Upon 600 deg. C 15 s annealing, the As atoms randomly relocated by ion irradiation almost completely recover their original configuration, probably capturing vacancies and forming, again, the complexes dissociated by ion irradiation

  6. The dependence of stress in IBAD films on the ion-irradiation energy and flux

    Schweitz, K. O.; Arndt, J.; Bøttiger, J.; Chevallier, J.

    1997-05-01

    Systematic experimental studies of the stress build-up during e-gun deposition of Ni with simultaneous bombardment by energetic Ar + ions (IBAD) have been carried out. The ion energy E was varied from 60 to 800 eV, and the ratio of the arrival rates of Ni atoms and Ar + ions, {R}/{J}, was varied from 0.5 to 6.4. The Ni-deposition rate was in the range from 0.5 to 2.0 Å/s, with all the depositions carried out near room temperature in a chamber with the base pressure of 5 × 10 -6 Pa. The film stress was measured by use of profilometry and the application of Stoney's equation. The experimental results were compared with predictions of a simple model proposed by Davis. This model assumes that the compressive stress build-up, due to knock-on implantation of film atoms being proportional to E {1}/{2}, is balanced by relaxation by collision-cascade-excited atom migration proportional to E {5}/{3}. To obtain agreement between model and experiment in the investigated ranges of E and {R}/{J}, an additional model parameter had to be added which takes into account that without irradiation, tensile stresses arise.

  7. Defect production in natural diamond irradiated with high energy Ni ions

    Varichenko, V.S.; Martinovich, V.A.; Penina, N.M.; Zajtsev, A.M.; Stel'makh, V.F.; Didyk, A.Yu.; Fahrner, W.R.

    1995-01-01

    Defect production in diamond irradiated by 335 MeV Ni ions within a dose range of 5 · 10 12 - 5 · 10 14 cm -2 has been studied by electron paramagnetic resonance (EPR) method. The irradiation leads to the appearance in diamond lattice of quasi-one-dimensional track like structures with non tetrahedral atomic configurations. Possible mechanism of microwave conductivity in the modified structures is discussed. Peculiarities of depth distribution profile of concentration of paramagnetic centres in modified structures are explained by track channeling and by stopped ions because of their elastic collisions with lattice atoms during ion stopping. (author). 24 refs., 4 figs., 1 tab

  8. Effect of Ge nanocluster assembly self-organization at pulsed irradiation by low-energy ions during heteroepitaxy on Si

    Dvurechenskij, A V; Smagina, Z V

    2001-01-01

    Using the method of scanning microscopy one studied experimentally size distribution of Ge clusters formed in course of experiments of two types at Ge heteroepitaxy on Si(111): regular process of molecular-beam epitaxy (MBE); pulse irradiation by approx = 200 eV energy Ge ions. The experiments were conducted at 350 deg C temperature. Pulse irradiation by an ion beam during heteroepitaxy was detected to result in reduction of the average size of Ge clusters, in compacting of their density and in reduction of mean square deviation from the average value in contrast to similar values in experiments devoted to regular MBE

  9. Effect of the track potential on the motion and energy flow of secondary electrons created from heavy-ion irradiation

    Moribayashi, Kengo

    2018-05-01

    Using simulations, we have evaluated the effect of the track potential on the motion and energy flow of secondary electrons, with the goal of determining the spatial distribution of energy deposition due to irradiation with heavy ions. We have simulated this effect as a function of the mean path τ between the incident ion-impact-ionization events at ion energies Eion. Here, the track potential is the potential formed from electric field near this incident ion path. The simulations indicate that this effect is mainly determined by τ and hardly depends on Eion. To understand heavy ion beam science more deeply and to reduce the time required by simulations, we have proposed simple approximation methods that almost reproduce the simulation results here.

  10. High energy ions and energetic plasma irradiation effects on aluminum in a Filippov-type plasma focus

    Roshan, M.V. [National Institute of Education, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616 (Singapore)], E-mail: mroshan20@yahoo.com; Rawat, R.S. [National Institute of Education, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616 (Singapore); Babazadeh, A.R.; Emami, M.; Sadat Kiai, S.M. [Plasma Physics Research Center, AEOI, 14155-1339 Tehran (Iran, Islamic Republic of); Verma, R.; Lin, J.J.; Talebitaher, A.R.; Lee, P.; Springham, S.V. [National Institute of Education, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616 (Singapore)

    2008-12-30

    High energy ions and energetic plasma irradiation of aluminum cathode inserts have been accomplished in nitrogen and argon filled plasma focus device. The Filippov-type plasma focus facility, Dena, with 288 {mu}F capacitor bank and charging voltage of 25 kV (90 kJ maximum storage energy) was first optimized for strong ion beam generation for nitrogen and argon gases by maximizing hard X-ray emission efficiency. X-ray diffraction analysis as well as scanning electron microscopy along with energy dispersive X-ray spectroscopy carried out to study the structural, morphological and compositional profile of the treated samples. Change in preferred orientation, emergence of meta-stable phases, generation of copper micro-droplets, and production of cracks across the sample are demonstrated and discussed. The micro-hardness measurements in Vickers scale reveal that after ion irradiation, the surface hardness of samples is reduced.

  11. The effect of carbon impurities on molybdenum surface morphology evolution under high-flux low-energy helium ion irradiation

    Tripathi, J.K., E-mail: jtripat@purdue.edu; Novakowski, T.J.; Gonderman, S.; Bharadwaj, N.; Hassanein, A.

    2016-09-15

    We report on the role of carbon (C) impurities, in molybdenum (Mo) fuzz evolutions on Mo surface during 100 eV He{sup +} ion irradiations. In this study we considered 0.01, 0.05, and 0.5% C{sup +} ion impurities in He{sup +} ion irradiations. For introducing such tiny C{sup +} ion impurities, gas mixtures of He and CH{sub 4} have been chosen in following ratios; 99.95: 0.05, 99.75: 0.25, and 97.5: 2.5. Apart from these three cases, two additional cases, 100% He{sup +} ion (for Mo fuzz growth due to only He{sup +} ions) and 100% H{sup +} ion (for confirming the significance of tiny 0.04–2.0% H{sup +} ions in terms of Mo fuzz evolutions on Mo surface, if any), have also been considered. Ion energy (100 eV), ion fluence (2.6 × 10{sup 24} ions m{sup −2}), and target temperature (923 K) were kept constant for each experiment and their selections were based on our previous studies [1,2]. Our study shows homogeneously populated and highly dense Mo fuzz evolutions on entire Mo surface for 100% He{sup +} ion irradiation case. Enhancement of C{sup +} ion impurities in He{sup +} ions causes a sequential reduction in Mo fuzz evolutions, leading to almost complete prevention of Mo fuzz evolutions for 0.5% C{sup +} ion impurity concentrations. Additionally, no fuzz formation for 100% H{sup +} ion irradiation at all, were seen (apart from some tiny nano-structuring, in very limited regions). This indicates that there is no significant role of H{sup +} ions in Mo fuzz evolutions (at least for such tiny amount, 0.04–2.0% H{sup +} ions). The study is significant to understand the behavior of potential high-Z plasma facing components (PFCs), in the, presence of tiny amount of C impurities, for nuclear fusion relevant applications. - Highlights: • Mo Fuzz evolutions due to low-energy high-flux 100% He{sup +} ion irradiation. • Sequential reduction in Mo fuzz evolutions with increasing C{sup +} ion impurities in He{sup +} ions. • Almost complete prevention of Mo

  12. Smoothing an isolated interface of cobalt-copper under irradiation by low-energy argon ions

    Stognij, A.I.; Novitskij, N.N.; Stukalov, O.M.

    2003-01-01

    Multilayer film structures, i.e. gold layer-copper-cobalt, are considered. It is shown that the structure, where cobalt surface prior to copper layer deposition was subjected to additional irradiation by a flow of argon ions, features the smoothest surface. The conclusion is made about smoothing out of cobalt-copper interface as a result of multiple collisions of argon slow ions and cobalt atoms during braking within two or three upper atomic rows of the cobalt layer [ru

  13. Effects of high energy (MeV) ion beam irradiation on polyethylene terephthalate

    Singh, Nandlal; Sharma, Anita; Avasthi, D.K.

    2003-01-01

    Irradiation effects of 50 MeV Li 3+ ion beams in polyethylene terephthalate (PET) films were studied with respect to their structural and electrical properties by using Fourier transform infrared (FTIR) spectroscopy and ac electrical measurement in the frequency range: 50-100 kHz at different temperatures of 30-150 deg. C. It is found that ac resistivity of PET decreases as frequency increases. The temperature dependencies of dielectric loss tangent exhibit a peak (T g ) at 60 deg. C. The capacitance value of irradiated PET is almost temperature independent and ones increases with an increasing of lithium fluence. FTIR spectra show various bands related to C-H, C-O, C-O-C molecular bonds and groups which get modified or break down due to ion beam irradiation

  14. Tailoring molybdenum nanostructure evolution by low-energy He{sup +} ion irradiation

    Tripathi, J.K., E-mail: jtripat@purdue.edu; Novakowski, T.J.; Hassanein, A.

    2015-10-30

    Mirror-finished polished molybdenum (Mo) samples were irradiated with 100 eV He{sup +} ions as a function of ion fluence (using a constant flux of 7.2 × 10{sup 20} ions m{sup −2} s{sup −1}) at normal incidence and at 923 K. Mo surface deterioration and nanoscopic fiber-form filament (“Mo fuzz”) growth evolution were monitored by using field emission (FE) scanning electron (SEM) and atomic force (AFM) microscopy studies. Those studies confirm a reasonably clean and flat surface, up to several micrometer scales along with a few mechanical-polishing-induced scratches. However, He{sup +} ion irradiation deteriorates the surface significantly even at 2.1 × 10{sup 23} ions m{sup −2} fluence (about 5 min. irradiation time) and leads to evolution of homogeneously populated ∼75-nm-long Mo nanograins having ∼8 nm intergrain width. The primary stages of Mo fuzz growth, i.e., elongated half-cylindrical ∼70 nm nanoplatelets, and encapsulated bubbles of 20–45 nm in diameter and preferably within the grain boundaries of sub-micron-sized grains, were observed after 1.3 × 10{sup 24} ions m{sup −2} fluence irradiation. Additionally, a sequential enhancement in the sharpness, density, and protrusions of Mo fuzz at the surface with ion fluence was also observed. Fluence- and flux-dependent studies have also been performed at 1223 K target temperature (beyond the temperature window for Mo fuzz formation). At a constant fluence of 2.6 × 10{sup 24} ions m{sup −2}, 7.2 × 10{sup 20} ions m{sup −2} s{sup −1} flux generates a homogeneous layered and stacked nanodiscs of ∼70 nm diameter. On the other hand, 1.2 × 10{sup 21} ions m{sup −2} s{sup −1} flux generates a combination of randomly patched netlike nanomatrix networked structure, mostly with ∼105 nm nanostructure wall width, various-shaped pores, and self-organized nano arrays. While the observed netlike nanomatrix network structures for 8.6 × 10{sup 24} ions m{sup −2} fluence (at a constant

  15. Tailoring molybdenum nanostructure evolution by low-energy He+ ion irradiation

    Tripathi, J.K.; Novakowski, T.J.; Hassanein, A.

    2015-01-01

    Mirror-finished polished molybdenum (Mo) samples were irradiated with 100 eV He + ions as a function of ion fluence (using a constant flux of 7.2 × 10 20 ions m −2 s −1 ) at normal incidence and at 923 K. Mo surface deterioration and nanoscopic fiber-form filament (“Mo fuzz”) growth evolution were monitored by using field emission (FE) scanning electron (SEM) and atomic force (AFM) microscopy studies. Those studies confirm a reasonably clean and flat surface, up to several micrometer scales along with a few mechanical-polishing-induced scratches. However, He + ion irradiation deteriorates the surface significantly even at 2.1 × 10 23 ions m −2 fluence (about 5 min. irradiation time) and leads to evolution of homogeneously populated ∼75-nm-long Mo nanograins having ∼8 nm intergrain width. The primary stages of Mo fuzz growth, i.e., elongated half-cylindrical ∼70 nm nanoplatelets, and encapsulated bubbles of 20–45 nm in diameter and preferably within the grain boundaries of sub-micron-sized grains, were observed after 1.3 × 10 24 ions m −2 fluence irradiation. Additionally, a sequential enhancement in the sharpness, density, and protrusions of Mo fuzz at the surface with ion fluence was also observed. Fluence- and flux-dependent studies have also been performed at 1223 K target temperature (beyond the temperature window for Mo fuzz formation). At a constant fluence of 2.6 × 10 24 ions m −2 , 7.2 × 10 20 ions m −2 s −1 flux generates a homogeneous layered and stacked nanodiscs of ∼70 nm diameter. On the other hand, 1.2 × 10 21 ions m −2 s −1 flux generates a combination of randomly patched netlike nanomatrix networked structure, mostly with ∼105 nm nanostructure wall width, various-shaped pores, and self-organized nano arrays. While the observed netlike nanomatrix network structures for 8.6 × 10 24 ions m −2 fluence (at a constant flux of 1.2 × 10 21 ions m −2 s −1 ) is quite similar to those for 2.6 × 10 24 ions m −2

  16. Tailoring molybdenum nanostructure evolution by low-energy He+ ion irradiation

    Tripathi, J. K.; Novakowski, T. J.; Hassanein, A.

    2015-10-01

    Mirror-finished polished molybdenum (Mo) samples were irradiated with 100 eV He+ ions as a function of ion fluence (using a constant flux of 7.2 × 1020 ions m-2 s-1) at normal incidence and at 923 K. Mo surface deterioration and nanoscopic fiber-form filament ("Mo fuzz") growth evolution were monitored by using field emission (FE) scanning electron (SEM) and atomic force (AFM) microscopy studies. Those studies confirm a reasonably clean and flat surface, up to several micrometer scales along with a few mechanical-polishing-induced scratches. However, He+ ion irradiation deteriorates the surface significantly even at 2.1 × 1023 ions m-2 fluence (about 5 min. irradiation time) and leads to evolution of homogeneously populated ∼75-nm-long Mo nanograins having ∼8 nm intergrain width. The primary stages of Mo fuzz growth, i.e., elongated half-cylindrical ∼70 nm nanoplatelets, and encapsulated bubbles of 20-45 nm in diameter and preferably within the grain boundaries of sub-micron-sized grains, were observed after 1.3 × 1024 ions m-2 fluence irradiation. Additionally, a sequential enhancement in the sharpness, density, and protrusions of Mo fuzz at the surface with ion fluence was also observed. Fluence- and flux-dependent studies have also been performed at 1223 K target temperature (beyond the temperature window for Mo fuzz formation). At a constant fluence of 2.6 × 1024 ions m-2, 7.2 × 1020 ions m-2 s-1 flux generates a homogeneous layered and stacked nanodiscs of ∼70 nm diameter. On the other hand, 1.2 × 1021 ions m-2 s-1 flux generates a combination of randomly patched netlike nanomatrix networked structure, mostly with ∼105 nm nanostructure wall width, various-shaped pores, and self-organized nano arrays. While the observed netlike nanomatrix network structures for 8.6 × 1024 ions m-2 fluence (at a constant flux of 1.2 × 1021 ions m-2 s-1) is quite similar to those for 2.6 × 1024 ions m-2 fluence, the nanostructure wall width extends up to ∼45

  17. Temperature-dependent surface modification of Ta due to high-flux, low-energy He+ ion irradiation

    Novakowski, T.J.; Tripathi, J.K.; Hassanein, A.

    2015-01-01

    This work examines the response of Tantalum (Ta) as a potential candidate for plasma-facing components (PFCs) in future nuclear fusion reactors. Tantalum samples were exposed to high-flux, low-energy He + ion irradiation at different temperatures in the range of 823–1223 K. The samples were irradiated at normal incidence with 100 eV He + ions at constant flux of 1.2 × 10 21 ions m −2  s −1 to a total fluence of 4.3 × 10 24 ions m −2 . An additional Ta sample was also irradiated at 1023 K using a higher ion fluence of 1.7 × 10 25 ions m −2 (at the same flux of 1.2 × 10 21 ions m −2  s −1 ), to confirm the possibility of fuzz formation at higher fluence. This higher fluence was chosen to roughly correspond to the lower fluence threshold of fuzz formation in Tungsten (W). Surface morphology was characterized with a combination of field-emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). These results demonstrate that the main mode of surface damage is pinholes with an average size of ∼70 nm 2 for all temperatures. However, significantly larger pinholes are observed at elevated temperatures (1123 and 1223 K) resulting from the agglomeration of smaller pinholes. Ex situ X-ray photoelectron spectroscopy (XPS) provides information about the oxidation characteristics of irradiated surfaces, showing minimal exfoliation of the irradiated Ta surface. Additionally, optical reflectivity measurements are performed to further characterize radiation damage on Ta samples, showing gradual reductions in the optical reflectivity as a function of temperature.

  18. Positive ion irradiation facility

    Braby, L.A.

    1985-01-01

    Many questions about the mechanisms of the response of cells to ionizing radiation can best be investigated using monoenergetic heavy charged particle beams. Questions of the role of different types of damage in the LET effect, for example, are being answered by comparing repair kinetics for damage induced by electrons with that produced by helium ions. However, as the models become more sophicated, the differences between models can be detected only with more precise measurements, or by combining high- and low-LET irradiations in split-dose experiments. The design of the authors present cell irradiation beam line has limited the authors to irradiating cells in a partial vacuum. A new way to mount the dishes and bring the beam to the cells was required. Several means of irradiating cells in mylar-bottom dishes have been used at other laboratories. For example at the RARAF Facility, the dual ion experiments are done with the dish bottom serving as the beam exit window but the cells are in a partial vacuum to prevent breaking the window. These researchers have chosen instead to use the dish bottom as the beam window and to irradiate the entire dish in a single exposure. A special, very fast pumping system will be installed at the end of the beam line. This system will make it possible to irradiate cells within two minutes of installing them in the irradiation chamber. In this way, the interaction of electron and ion-induced damage in Chlamydomonas can be studied with time between doses as short as 5 minutes

  19. A correlation between micro- and nano-indentation on materials irradiated by high-energy heavy ions

    Yang, Yitao; Zhang, Chonghong; Ding, Zhaonan; Su, Changhao; Yan, Tingxing; Song, Yin; Cheng, Yuguang

    2018-01-01

    Hardness testing is an efficient means of assessing the mechanical properties of materials due to the small sampling volume requirement. Previous studies have established the correlation between flow stress and Vickers hardness. However, the damage layer produced by ions irradiation with low energy is too thin to perform Vickers hardness test, which is usually measured by nano-indentation. Therefore, it is necessary to correlate the Vickers hardness and nano-hardness for the convenience of assessing mechanical properties of materials under irradiation. In this study, various materials (pure nickel, nickel base alloys and oxide dispersion strengthened steel) were irradiated with high-energy heavy ions to different damage levels. After irradiation, micro- and nano-indentation were performed to characterize the change in hardness. Due to indentation size effect (ISE), the hardness was dependent of load or depth. Therefore, Nix-Gao model was used to obtain the hardness without ISE (Hv0 and Hnano_0). The determined Hv0 was plotted as a function of the corresponding Hnano_0, then a good linear relation was found between Vickers hardness and nano-hardness, and a coefficient was determined to be 81.0 ± 10.5, namely, Hv 0 = 81.0Hnano _ 0 (Hv0 with unit of kgf/mm2, Hnano_0 with unit of GPa). This correlation was based on the data from various materials, therefore it was independent of materials. Based on the established correlation and nano-indentation results, the change fraction in yield stress of Inconel 718 and pure Ni with ion irradiation was compared with that with neutron irradiation. The data of Inconel 718 with heavy ion irradiation was in good agreement with the data with neutron irradiation, which was a good demonstration for the validation of the established correlation. However, a distinctive difference in change fraction of yield stress was seen for pure Ni under heavy ion irradiation and neutron irradiation, which was attributed to the difference in samples

  20. Formation of hexagonal silicon carbide by high energy ion beam irradiation on Si (1 0 0) substrate

    Bhuyan, H; Favre, M; Valderrama, E; Avaria, G; Chuaqui, H; Mitchell, I; Wyndham, E; Saavedra, R; Paulraj, M

    2007-01-01

    We report the investigation of high energy ion beam irradiation on Si (1 0 0) substrates at room temperature using a low energy plasma focus (PF) device operating in methane gas. The unexposed and ion exposed substrates were characterized by x-ray diffraction, scanning electron microscopy (SEM), photothermal beam deflection, energy-dispersive x-ray analysis and atomic force microscopy (AFM) and the results are reported. The interaction of the pulsed PF ion beams, with characteristic energy in the 60-450 keV range, with the Si surface, results in the formation of a surface layer of hexagonal silicon carbide. The SEM and AFM analyses indicate clear step bunching on the silicon carbide surface with an average step height of 50 nm and a terrace width of 800 nm

  1. Linear Energy Transfer-Dependent Change in Rice Gene Expression Profile after Heavy-Ion Beam Irradiation.

    Kotaro Ishii

    Full Text Available A heavy-ion beam has been recognized as an effective mutagen for plant breeding and applied to the many kinds of crops including rice. In contrast with X-ray or γ-ray, the heavy-ion beam is characterized by a high linear energy transfer (LET. LET is an important factor affecting several aspects of the irradiation effect, e.g. cell survival and mutation frequency, making the heavy-ion beam an effective mutagen. To study the mechanisms behind LET-dependent effects, expression profiling was performed after heavy-ion beam irradiation of imbibed rice seeds. Array-based experiments at three time points (0.5, 1, 2 h after the irradiation revealed that the number of up- or down-regulated genes was highest 2 h after irradiation. Array-based experiments with four different LETs at 2 h after irradiation identified LET-independent regulated genes that were up/down-regulated regardless of the value of LET; LET-dependent regulated genes, whose expression level increased with the rise of LET value, were also identified. Gene ontology (GO analysis of LET-independent up-regulated genes showed that some GO terms were commonly enriched, both 2 hours and 3 weeks after irradiation. GO terms enriched in LET-dependent regulated genes implied that some factor regulates genes that have kinase activity or DNA-binding activity in cooperation with the ATM gene. Of the LET-dependent up-regulated genes, OsPARP3 and OsPCNA were identified, which are involved in DNA repair pathways. This indicates that the Ku-independent alternative non-homologous end-joining pathway may contribute to repairing complex DNA legions induced by high-LET irradiation. These findings may clarify various LET-dependent responses in rice.

  2. Linear Energy Transfer-Dependent Change in Rice Gene Expression Profile after Heavy-Ion Beam Irradiation.

    Ishii, Kotaro; Kazama, Yusuke; Morita, Ryouhei; Hirano, Tomonari; Ikeda, Tokihiro; Usuda, Sachiko; Hayashi, Yoriko; Ohbu, Sumie; Motoyama, Ritsuko; Nagamura, Yoshiaki; Abe, Tomoko

    2016-01-01

    A heavy-ion beam has been recognized as an effective mutagen for plant breeding and applied to the many kinds of crops including rice. In contrast with X-ray or γ-ray, the heavy-ion beam is characterized by a high linear energy transfer (LET). LET is an important factor affecting several aspects of the irradiation effect, e.g. cell survival and mutation frequency, making the heavy-ion beam an effective mutagen. To study the mechanisms behind LET-dependent effects, expression profiling was performed after heavy-ion beam irradiation of imbibed rice seeds. Array-based experiments at three time points (0.5, 1, 2 h after the irradiation) revealed that the number of up- or down-regulated genes was highest 2 h after irradiation. Array-based experiments with four different LETs at 2 h after irradiation identified LET-independent regulated genes that were up/down-regulated regardless of the value of LET; LET-dependent regulated genes, whose expression level increased with the rise of LET value, were also identified. Gene ontology (GO) analysis of LET-independent up-regulated genes showed that some GO terms were commonly enriched, both 2 hours and 3 weeks after irradiation. GO terms enriched in LET-dependent regulated genes implied that some factor regulates genes that have kinase activity or DNA-binding activity in cooperation with the ATM gene. Of the LET-dependent up-regulated genes, OsPARP3 and OsPCNA were identified, which are involved in DNA repair pathways. This indicates that the Ku-independent alternative non-homologous end-joining pathway may contribute to repairing complex DNA legions induced by high-LET irradiation. These findings may clarify various LET-dependent responses in rice.

  3. The mass effect model of the survival rate's dose effect of organism irradiated with low energy ion beam

    Shao Chunlin; Gui Qifu; Yu Zengliang

    1995-01-01

    The main characteristic of the low energy ions mutation is its mass deposition effect. Basing on the theory of 'double strand breaking' and the 'mass deposition effect', the authors suggests that the mass deposition products can repair or further damage the double strand breaking of DNA. According to this consideration the dose effect model of the survival rate of organism irradiated by low energy of N + ion beam is deduced as: S exp{-p[αφ + βφ 2 -Rφ 2 exp(-kφ)-Lφ 3 exp(-kφ)]}, which can be called 'mass effect model'. In the low energy ion beam mutation, the dose effects of many survival rates that can not be imitated by previous models are successfully imitated by this model. The suitable application fields of the model are also discussed

  4. Structural effects in UO{sub 2} thin films irradiated with fission-energy Xe ions

    Popel, A.J., E-mail: apopel@cantab.net [Department of Earth Sciences, University of Cambridge, Downing Street, Cambridge, CB2 3EQ (United Kingdom); Lebedev, V.A. [Lomonosov Moscow State University, Moscow, 119991 (Russian Federation); Martin, P.G. [Interface Analysis Centre, School of Physics, University of Bristol, Bristol, BS8 1TL (United Kingdom); Shiryaev, A.A. [Frumkin Institute of Physical Chemistry and Electrochemistry RAS, Moscow (Russian Federation); Lomonosov Moscow State University, Moscow, 119991 (Russian Federation); Lampronti, G.I. [Department of Earth Sciences, University of Cambridge, Downing Street, Cambridge, CB2 3EQ (United Kingdom); Springell, R. [Interface Analysis Centre, School of Physics, University of Bristol, Bristol, BS8 1TL (United Kingdom); Kalmykov, S.N. [Lomonosov Moscow State University, Moscow, 119991 (Russian Federation); National Research Centre “Kurchatov Institute”, 123098, Moscow (Russian Federation); Scott, T.B. [Interface Analysis Centre, School of Physics, University of Bristol, Bristol, BS8 1TL (United Kingdom); Monnet, I.; Grygiel, C. [CIMAP, CEA-CNRS-ENSICAEN-Université de Caen, BP 5133, 14070, Caen, Cedex5 (France); Farnan, I. [Department of Earth Sciences, University of Cambridge, Downing Street, Cambridge, CB2 3EQ (United Kingdom)

    2016-12-15

    Uranium dioxide thin films have been successfully grown on LSAT (Al{sub 10}La{sub 3}O{sub 51}Sr{sub 14}Ta{sub 7}) substrates by reactive magnetron sputtering. Irradiation by 92 MeV {sup 129}Xe{sup 23+} ions to simulate fission damage that occurs within nuclear fuels caused microstructural and crystallographic changes. Initially flat and continuous thin films were produced by magnetron sputtering with a root mean square roughness of 0.35 nm determined by AFM. After irradiation, this roughness increased to 60–70 nm, with the films developing discrete microstructural features: small grains (∼3 μm), along with larger circular (up to 40 μm) and linear formations with non-uniform composition according to the SEM, AFM and EDX results. The irradiation caused significant restructuring of the UO{sub 2} films that was manifested in significant film-substrate mixing, observed through EDX analysis. Diffusion of Al from the substrate into the film in unirradiated samples was also observed. - Highlights: • Flat (001) single crystal UO{sub 2} thin films on LSAT (001) substrates produced. • Ion irradiation induced topographical and structural rearrangements in UO{sub 2} films.

  5. Enhancement of optical absorption of Si (100) surfaces by low energy N+ ion beam irradiation

    Bhowmik, Dipak; Karmakar, Prasanta

    2018-05-01

    The increase of optical absorption efficiency of Si (100) surface by 7 keV and 8 keV N+ ions bombardment has been reported here. A periodic ripple pattern on surface has been observed as well as silicon nitride is formed at the ion impact zones by these low energy N+ ion bombardment [P. Karmakar et al., J. Appl. Phys. 120, 025301 (2016)]. The light absorption efficiency increases due to the presence of silicon nitride compound as well as surface nanopatterns. The Atomic Force Microscopy (AFM) study shows the formation of periodic ripple pattern and increase of surface roughness with N+ ion energy. The enhancement of optical absorption by the ion bombarded Si, compared to the bare Si have been measured by UV - visible spectrophotometer.

  6. The effect of low energy helium ion irradiation on tungsten-tantalum (W-Ta) alloys under fusion relevant conditions

    Gonderman, S.; Tripathi, J. K.; Novakowski, T. J.; Sizyuk, T.; Hassanein, A.

    2017-08-01

    Currently, tungsten remains the best candidate for plasma-facing components (PFCs) for future fusion devices because of its high melting point, low erosion, and strong mechanical properties. However, continued investigation has shown tungsten to undergo severe morphology changes under fusion-like conditions. These results motivate the study of innovative PFC materials which are resistant to surface morphology evolution. The goal of this work is to examine tungsten-tantalum (W-Ta) alloys, a potential PFC material, and their response to low energy helium ion irradiation. Specifically, W-Ta samples are exposed to 100 eV helium irradiations with a flux of 1.15 × 1021 ions m-2 s-1, at 873 K, 1023 K, and 1173 K for 1 h duration. Scanning electron microscopy (SEM) reveals significant changes in surface deterioration due to helium ion irradiation as a function of both temperature and tantalum concentration in W-Ta samples. X-Ray Diffraction (XRD) studies show a slight lattice parameter expansion in W-Ta alloy samples compared to pure W samples. The observed lattice parameter expansion in W-Ta alloy samples (proportional to increasing Ta wt.% concentrations) reflect significant differences observed in the evolution of surface morphology, i.e., fuzz development processes for both increasing Ta wt.% concentration and target temperature. These results suggest a correlation between the observed morphology differences and the induced crystal structure change caused by the presence of tantalum. Shifts in the XRD peaks before and after 100 eV helium irradiation with a flux of 1.15 × 1021 ions m-2 s-1, 1023 K, for 1 h showed a significant difference in the magnitude of the shift. This has suggested a possible link between the atomic spacing of the material and the accumulated damage. Ongoing research is needed on W-Ta alloys and other innovative materials for their application as irradiation resistant materials in future fusion or irradiation environments.

  7. Enhancement of metal-nanoparticle precipitation by co-irradiation of high-energy heavy ions and laser in silica glass

    Okubo, N.; Umeda, N.; Takeda, Y.; Kishimoto, N.

    2003-01-01

    Simultaneous laser irradiation under ion irradiation is conducted to control nanoparticle precipitation in amorphous (a-)SiO 2 . Copper ions of 3 MeV and photons of 532 nm by Nd:YAG laser are irradiated to substrates of a-SiO 2 . The ion dose rate and total dose are set at 2-10 μA/cm 2 and 3.0 x 10 16 -3.0 x 10 17 ions/cm 2 , respectively, and the laser power density is 0.05-0.2 J/cm 2 pulse at 10 Hz. The laser is simultaneously irradiated with ions in the co-irradiation mode, and the result is compared to that in the sequential and ion-only irradiation. Cross-sectional TEM of the irradiated specimens is conducted after measuring optical absorption spectra. In the case of co-irradiation of intense laser power and high dose (0.2 J/cm 2 pulse and 3.0 x 10 17 ions/cm 2 ), Cu nanoparticles precipitate much more extensively than in the sequential irradiation, increasing both the particle diameter and the total Cu atoms in the nanoparticles. The optical absorption spectra show a surface plasmon peak of the nanoparticles. The precipitation enhancement in the co-irradiation mode suggests that the electronic energy is absorbed by the dynamic electronic states and promotes the Cu precipitation via enhancing the atomic migration

  8. Ion acceleration with a narrow energy spectrum by nanosecond laser-irradiation of solid target

    Altana, C., E-mail: altana@lns.infn.it [Laboratori Nazionali del Sud, Istituto Nazionale di Fisica Nucleare, Via S. Sofia 62, 95123 Catania (Italy); Dipartimento di Fisica e Astronomia, Università degli Studi di Catania, Via S. Sofia 64, 95123 Catania (Italy); Lanzalone, G. [Laboratori Nazionali del Sud, Istituto Nazionale di Fisica Nucleare, Via S. Sofia 62, 95123 Catania (Italy); Università degli Studi di Enna “Kore,” Via delle Olimpiadi, 94100 Enna (Italy); Mascali, D.; Cirrone, G. A. P.; Schillaci, F.; Tudisco, S. [Laboratori Nazionali del Sud, Istituto Nazionale di Fisica Nucleare, Via S. Sofia 62, 95123 Catania (Italy); Muoio, A. [Laboratori Nazionali del Sud, Istituto Nazionale di Fisica Nucleare, Via S. Sofia 62, 95123 Catania (Italy); Dipartimento di Fisica e Scienze della Terra, Università degli Studi di Messina, Viale F. D’Alcontres 31, 98166 Messina (Italy)

    2016-02-15

    In laser-driven plasma, ion acceleration of aluminum with the production of a quasi-monoenergetic beam has occurred. A useful device to analyze the ions is the Thomson parabolas spectrometer, a well-known diagnostic that is able to obtain information on charge-to-mass ratio and energy distribution of the charged particles. At the LENS (Laser Energy for Nuclear Science) laboratory of INFN-LNS in Catania, experimental measures were carried out; the features of LENS are: Q-switched Nd:YAG laser with 2 J laser energy, 1064 nm fundamental wavelengths, and 6 ns pulse duration.

  9. SAXS investigation of latent track structure in HDPE irradiated with high energy Fe ions

    Hai, Yang; Huang, Can [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Ma, Mingwang [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Institute of Electronic Engineering, CAEP, Mianyang 621900 (China); Liu, Qi; Wang, Yuzhu; Liu, Yi; Tian, Feng; Lin, Jun [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Zhu, Zhiyong, E-mail: zhuzhiyong@sinap.ac.cn [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China)

    2015-08-01

    Semi-crystalline high density polyethylene (HDPE) samples were irradiated with 1.157 GeV {sup 56}Fe ion beams to fluences ranging from 1 × 10{sup 11} to 6 × 10{sup 12} ions/cm{sup 2}. The radiation induced changes in nano/microstructure were investigated with small angle X-ray scattering (SAXS) technique. The scattering contributions from HDPE matrix and ion tracks are successfully separated and analyzed through tilted SAXS measurements with respect to the X-ray beam direction. Lorentz correction, one-dimensional correlation function calculation, fractal nature analysis of the isotropic scattering pattern reveal that HDPE long period polymeric structures are damaged and new materials, possibly clusters of carbon-rich materials, are formed inside the ion tracks. Least square curve fitting of the scattering contribution from the ion track reveals that the track is composed of a core of about 5.3 nm in radius, characterized by a significant density deficit compared to the virgin HDPE, surrounded by a shell of about 4.3 nm in thickness with less density reduction.

  10. Ion beam irradiation effects on aromatic polymers

    Shukushima, Satoshi; Ueno, Keiji

    1995-01-01

    We studied the optical and thermal properties of aromatic polymer films which had been irradiated with 1 MeV H + , H 2 + and He + ions. The examined aromatic polymers were polyetherether ketone(PEEK), polyetherimide(PEI), polyether sulfon(PES), polysulfon(PSF), and polyphenylene sulfide(PPS). The optical densities at 300nm of PES and PSF greatly increased after the irradiation. The optical densities at 400nm of all the examined polymer lineally increased with the irradiation dose. The PEEK film which had been irradiated with 1 MeV H + was not deformed above melting point. This demonstrates that cross-linking occurs in PEEK films by ion beam irradiation. As for the effects, depending on the mass of the irradiated ions, it was found that the ions with a high mass induced larger effects on the aromatic polymers for the same absorption energy. (author)

  11. Behavior of carbon readsorbed on tungsten during low energy Ar ion irradiation at elevated temperatures

    Pranevicius, L.; Pranevicius, L.L.; Milcius, D.; Templier, C.; Bobrovaite, B.

    2008-01-01

    A study of the behavior of carbon sputtered and readsorbed after scattering collisions with particles of surrounding gas on the tungsten surface affected by Ar ion irradiation with the flux equal to 2 x 10 16 cm -2 s -1 extracted from plasma under 300 V negative bias voltage in the temperature range 370-870 K was performed. The dependence of the W sample weight change on the working gas pressure in the range 0.1-10 Pa was registered and the information was deduced about prevailing sputtering-redeposition processes. The depth profiles of carbon at the tungsten surface were measured. We found that carbon distribution profiles in tungsten depend on the C redeposition rate for fixed ion irradiation parameters. Three regimes have been distinguished: (i) at working gas pressure equal to 5 Pa and more, the C redeposition rate prevails the sample surface erosion rate and the W surface is covered by continuous amorphous carbon film (the C film growth regime), (ii) at working gas pressure equal to about 1 Pa, the C redepostion rate is approximately equal to the erosion rate and the W surface is partially covered by redeposited carbon, and (iii) at working gas pressure less than 0.2 Pa, the erosion rate prevails the C redeposition rate (the W surface erosion regime). In the regime of balanced redeposition and erosion deep C penetration depth into nanocrystalline W was registered. It is suggested that under simultaneous C adsorption and ion irradiation at elevated temperature C adatoms are driven from the W surface into grain boundaries and into the bulk by the difference in chemical potentials between the activated W surface and grain boundaries. As the W surface is covered by amorphous C film, the grain boundaries are blocked and the efficiency of carbon transport decreases

  12. Temperature dependent surface modification of molybdenum due to low energy He+ ion irradiation

    Tripathi, J.K.; Novakowski, T.J.; Joseph, G.; Linke, J.; Hassanein, A.

    2015-01-01

    In this paper, we report on the temperature dependent surface modifications in molybdenum (Mo) samples due to 100 eV He + ion irradiation in extreme conditions as a potential candidate to plasma-facing components in fusion devices alternative to tungsten. The Mo samples were irradiated at normal incidence, using an ion fluence of 2.6 × 10 24 ions m −2 (with a flux of 7.2 × 10 20 ions m −2 s −1 ). Surface modifications have been studied using high-resolution field emission scanning electron-(SEM) and atomic force (AFM) microscopy. At 773 K target temperature homogeneous evolution of molybdenum nanograins on the entire Mo surface were observed. However, at 823 K target temperature appearance of nano-pores and pin-holes nearby the grain boundaries, and Mo fuzz in patches were observed. The fuzz density increases significantly with target temperatures and continued until 973 K. However, at target temperatures beyond 973 K, counterintuitively, a sequential reduction in the fuzz density has been seen till 1073 K temperatures. At 1173 K and above temperatures, only molybdenum nano structures were observed. Our temperature dependent studies confirm a clear temperature widow, 823–1073 K, for Mo fuzz formation. Ex-situ high resolution X-ray photoelectron spectroscopy studies on Mo fuzzy samples show the evidence of MoO 3 3d doublets. This elucidates that almost all the Mo fuzz were oxidized during open air exposure and are thick enough as well. Likewise the microscopy studies, the optical reflectivity measurements also show a sequential reduction in the reflectivity values (i.e., enhancement in the fuzz density) up to 973 K and after then a sequential enhancement in the reflectivity values (i.e., reduction in the fuzz density) with target temperatures. This is in well agreement with microscopy studies where we observed clear temperature window for Mo fuzz growth

  13. Deep-level transient spectroscopy of low-energy ion-irradiated silicon

    Kolkovsky, Vladimir; Privitera, V.; Nylandsted Larsen, Arne

    2009-01-01

     During electron-gun deposition of metal layers on semiconductors, the semiconductor is bombarded with low-energy metal ions creating defects in the outermost surface layer. For many years, it has been a puzzle why deep-level transient spectroscopy spectra of the as-deposited, electron-gun evapor...

  14. Development of nano-structure controlled polymer electrolyte fuel-cell membranes by high-energy heavy ion irradiation

    Yamaki, Tetsuya; Asano, Masaharu; Maekawa, Yasunari; Yoshida, Masaru; Kobayashi, Misaki; Nomura, Kumiko; Takagi, Shigeharu

    2008-01-01

    There is increasing interest in polymer electrolyte fuel cells (PEFCs) together with recent worldwide energy demand and environmental issues. In order to develop proton-conductive membranes for PEFCs, we have been using high-energy heavy ion beams from the cyclotron accelerator of Takasaki Ion Accelerators for Advanced Radiation Application (TIARA), JAEA. Our strategic focus is centered on using nano-scale controllability of the ion-beam processing; the membrane preparation involves (1) the irradiation of commercially-available base polymer films with MeV ions, (2) graft polymerization of vinyl monomers into electronically-excited parts along the ion trajectory, called latent tracks, and (3) sulfonation of the graft polymers. Interestingly, the resulting membranes exhibited anisotropic proton transport, i.e., higher conductivity in the thickness direction. According to microscopic observations, this is probably because the columnar electrolyte phase extended, with a width of tens-to-hundreds nanometers, through the membrane. Other excellent membrane properties, e.g., sufficient mechanical strength, high dimensional stability, and low gas permeability should be due to such a controlled structure. (author)

  15. Ion irradiation of carbides ZrC and TiC. Effects of electronic and nuclear energy losses

    Pellegrino-Chateau, Stephanie

    2015-01-01

    This study is focused on the ceramic refractory transition metals, such as titanium carbide and zirconium envisaged to their strength characteristics under extreme conditions. These ceramics are subject to various sources of radiation (neutrons, fission products, the alpha decays) in future generation reactors IV high temperature reactor and gas cooled reactor. Radiation encountered in the reactor can be simulated by external irradiation with particle accelerators, using various ions in a wide energy range. These instruments can reproduce in controlled conditions damage suffered by structural nuclear materials. (author) [fr

  16. Polymer surfaces graphitization by low-energy He{sup +} ions irradiation

    Geworski, A.; Lazareva, I.; Gieb, K.; Koval, Y.; Müller, P. [Department of Physics, Universität Erlangen-Nürnberg, Erwin-Rommel-Str. 1, 91058 Erlangen (Germany)

    2014-08-14

    The electrical and optical properties of surfaces of polyimide and AZ5214e graphitized by low-energy (1 keV) He{sup +} irradiation at different polymer temperatures were investigated. The conductivity of the graphitized layers can be controlled with the irradiation temperature within a broad range and can reach values up to ∼1000 S/cm. We show that the electrical transport in low-conducting samples is governed by thermally activated hopping, while the samples with a high conductivity show a typical semimetallic behavior. The transition from thermally activated to semimetallic conductance governed by the irradiation temperature could also be observed in optical measurements. The semimetallic samples show an unusually high for graphitic materials carrier concentration, which results in a high extinction coefficient in the visible light range. By analyzing the temperature dependence of the conductance of the semimetallic samples, we conclude that the scattering of charge carriers is dominated by Coulomb interactions and can be described by a weak localization model. The transition from a three to two dimensional transport mechanism at low temperatures consistently explains the change in the temperature dependence of the conductance by cooling, observed in experiments.

  17. Cumulative approaches to track formation under swift heavy ion (SHI) irradiation: Phenomenological correlation with formation energies of Frenkel pairs

    Crespillo, M.L., E-mail: mcrespil@utk.edu [Centro de Microanálisis de Materiales, CMAM-UAM, Cantoblanco, Madrid 28049 (Spain); Department of Materials Science & Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Agulló-López, F., E-mail: fal@uam.es [Centro de Microanálisis de Materiales, CMAM-UAM, Cantoblanco, Madrid 28049 (Spain); Zucchiatti, A. [Centro de Microanálisis de Materiales, CMAM-UAM, Cantoblanco, Madrid 28049 (Spain)

    2017-03-01

    Highlights: • Extensive survey formation energies Frenkel pairs and electronic stopping thresholds. • Correlation: track formation thresholds and the energies for Frenkel pair formation. • Formation energies Frenkel pairs discussed in relation to the cumulative mechanisms. • Amorphous track formation mechanisms: defect accumulation models versus melting. • Advantages cumulative models to deal with new hot topics: nuclear-electronic synergy. - Abstract: An extensive survey for the formation energies of Frenkel pairs, as representative candidates for radiation-induced point defects, is presented and discussed in relation to the cumulative mechanisms (CM) of track formation in dielectric materials under swift heavy ion (SHI) irradiation. These mechanisms rely on the generation and accumulation of point defects during irradiation followed by collapse of the lattice once a threshold defect concentration is reached. The physical basis of those approaches has been discussed by Fecht as a defect-assisted transition to an amorphous phase. Although a first quantitative analysis of the CM model was previously performed for LiNbO{sub 3} crystals, we have, here, adopted a broader phenomenological approach. It explores the correlation between track formation thresholds and the energies for Frenkel pair formation for a broad range of materials. It is concluded that the threshold stopping powers can be roughly scaled with the energies required to generate a critical Frenkel pair concentration in the order of a few percent of the total atomic content. Finally, a comparison with the predictions of the thermal spike model is discussed within the analytical Szenes approximation.

  18. Surface deformation effects on stainless steel, Ni, Cu and Mo produced by medium energy He ions irradiation

    Constantinescu, B.; Florescu, V.; Sarbu, C.

    1993-01-01

    To investigate dose and energy dependence of surface deformation effects (blistering and flaking), different kinds of candidate CTR first wall materials as 12KH18N10T, W-4541, W-4016 and SS-304 stainless steels, Ni, Cu, Mo were irradiated at room temperature with 3.0, 4.7 and 6.8 MeV He + ions at IAP Cyclotron. The effects were investigated by means of a TEMSCAN 200 CX electron microscope and two metallographic Orthoplan Pol Leitz and Olympus microscopes. We observed two dose dependent main phenomena: blistering and flaking (craters). So, blisters occurrence on the irradiated surface is almost instantaneous when a critical dose (number of He ions accumulated in the region at the end of alpha particles range) is reached. Increasing irradiation dose, we reached flaking stage. So, isolated submicronic fissures along grain boundaries were observed on the blister skin, chronologically followed by large (5-20 μm) deep cracks of hundreds of microns in length, blisters opening and, finally, flaking appearance. (author) 8 figs., 1 tab

  19. Tailoring magnetism by light-ion irradiation

    Fassbender, J; Ravelosona, D; Samson, Y

    2004-01-01

    Owing to their reduced dimensions, the magnetic properties of ultrathin magnetic films and multilayers, e.g. magnetic anisotropies and exchange coupling, often depend strongly on the surface and interface structure. In addition, chemical composition, crystallinity, grain sizes and their distribution govern the magnetic behaviour. All these structural properties can be modified by light-ion irradiation in an energy range of 5-150 keV due to the energy loss of the ions in the solid along their trajectory. Consequently the magnetic properties can be tailored by ion irradiation. Similar effects can also be observed using Ga + ion irradiation, which is the common ion source in focused ion beam lithography. Examples of ion-induced modifications of magnetic anisotropies and exchange coupling are presented. This review is limited to radiation-induced structural changes giving rise to a modification of magnetic parameters. Ion implantation is discussed only in special cases. Due to the local nature of the interaction, magnetic patterning without affecting the surface topography becomes feasible, which may be of interest in applications. The main patterning technique is homogeneous ion irradiation through masks. Focused ion beam and ion projection lithography are usually only relevant for larger ion masses. The creation of magnetic feature sizes below 50 nm is shown. In contrast to topographic nanostructures the surrounding area of these nanostructures can be left ferromagnetic, leading to new phenomena at their mutual interface. Most of the material systems discussed here are important for technological applications. The main areas are magnetic data storage applications, such as hard magnetic media with a large perpendicular magnetic anisotropy or patterned media with an improved signal to noise ratio and magnetic sensor elements. It will be shown that light-ion irradiation has many advantages in the design of new material properties and in the fabrication technology of

  20. Bioastrophysical Aspects of Low Energy Ion Irradiation of Frozen Anthracene Containing Water

    Tuleta, M.; Gabla, L.; Madej, J.

    2001-01-01

    The origin of life on Earth remains a fascinating mystery in spite of many theories existing on this subject. However, it seems that simple prebiotic molecules could play an essential role in the formation of more complex organisms. In our experiment, we synthesized a class of these molecules (quinones) bombarding frozen anthracene containing water with low energy hydrogen ions. This experiment roughly simulated the astrophysical conditions which one can find in the solar system. Thus, we can hypothesize that prebiotic molecules could be created by interaction of the solar wind with interplanetary dust grains. The delivery of these molecules to early Earth may have contributed to the generation of life on our planet

  1. Interaction of atomic and low-energy deuterium with tungsten pre-irradiated with self-ions

    Ogorodnikova, O. V.; Markelj, S.; Toussaint, U. von

    2016-01-01

    Polycrystalline tungsten (W) specimens were pre-irradiated with self-ions to create identical samples with high density of defects up to ∼2.5 μm near the surface. Then, W specimens were exposed to either thermal atomic deuterium (D) beam with an incident energy of ∼0.2 eV or low energy D plasma with the incident energy varied between 5 and 200 eV at different sample temperatures. Each sample was exposed once at certain temperature and fluence. The D migration and accumulation in W were studied post-mortem by nuclear reaction method. It was shown that the rate of the D to occupy radiation-induced defects increases with increasing the incident energy, ion flux, and temperature. Experimental investigation was accompanied by modelling using the rate-equation model. Moreover, the analytical model was developed and benchmarked against numerical model. The calculations of the deuterium diffusion with trapping at radiation-induced defects in tungsten by analytical model are consistent with numerical calculations using rate-equation model. The data of reflection and penetration of atomic and low-energy D were taking from calculations using molecular dynamics (MD) with Juslin interatomic potentials and a binary collision code TRIM. MD calculations show an agreement with a binary collision code TRIM only in a very narrow range of deuterium energies between 1 and 20 eV. Incorporation of the data of reflection and penetration of deuterium in the macroscopic modelling has been done to verify the range of validity of calculations using MD and binary collision code TRIM by comparison of modelling results with experimental data. Modelling results are consistent with experiments using reflection and penetration data of D obtained from TRIM code for incident ion energy above 1 eV. Otherwise, the parameters obtained from MD should be incorporated in the rate-equation model to have a good agreement with the experiments

  2. Recovery effects due to the interaction between nuclear and electronic energy losses in SiC irradiated with a dual-ion beam

    Thomé, Lionel, E-mail: thome@csnsm.in2p3.fr; Debelle, Aurélien; Garrido, Frédérico; Sattonnay, Gaël; Mylonas, Stamatis [Centre de Sciences Nucléaires et de Sciences de la Matière, CNRS-IN2P3-Université Paris-Sud, Bât. 108, F-91405 Orsay (France); Velisa, Gihan [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Horia Hulubei National Institute for Physics and Nuclear Engineering, P.O.B. MG-6, 077125 Magurele (Romania); Miro, Sandrine; Trocellier, Patrick; Serruys, Yves [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France)

    2015-03-14

    Single and dual-beam ion irradiations of silicon carbide (SiC) were performed to study possible Synergetic effects between Nuclear (S{sub n}) and Electronic (S{sub e}) Energy Losses. Results obtained combining Rutherford backscattering in channeling conditions, Raman spectroscopy, and transmission electron microscopy techniques show that dual-beam irradiation of SiC induces a dramatic change in the final sample microstructure with a substantial decrease of radiation damage as compared to single-beam irradiation. Actually, a defective layer containing dislocations is formed upon dual-beam irradiation (S{sub n} and S{sub e}), whereas single low-energy irradiation (S{sub n} alone) or even sequential (S{sub n} + S{sub e}) irradiations lead to full amorphization. The healing process is ascribed to the electronic excitation arising from the electronic energy loss of swift ions. These results shed new light on the long-standing puzzling problem of the existence of a possible synergy between S{sub n} and S{sub e} in ion-irradiation experiments. This work is interesting for both fundamental understanding of the ion-solid interactions and technological applications in the nuclear industry where recovery S{sub n}/S{sub e} effects may preserve the integrity of nuclear devices.

  3. Measurement of water decomposition products after the irradiation with high-energy heavy-ion beams

    Katsumura, Y.; Yamashita, S.; Muroya, Y.; Lin, M.; Miyazaki, T.; Kudo, H.; Murakami, T.

    2005-01-01

    We measured the G-values of water decomposition products produced by high-energy heavy-ion beams. It was found that the evaluated yields are consistent with reported ones. In other words, with the increase of LET, the radical yields decrease, and the molecular yields increase and tend to level off. But the evaluated yields are slightly higher than reported values. So we have started two trials. One is to check the values with experiment again, and the other is to explain the difference between the yields by using the spur diffusion model. In order to explain the values quantitatively, the spur diffusion model has been applied and track structure has been investigated. (author)

  4. Heavy ion irradiation of astrophysical ice analogs

    Duarte, Eduardo Seperuelo; Domaracka, Alicja; Boduch, Philippe; Rothard, Hermann; Balanzat, Emmanuel; Dartois, Emmanuel; Pilling, Sergio; Farenzena, Lucio; Frota da Silveira, Enio

    2009-01-01

    Icy grain mantles consist of small molecules containing hydrogen, carbon, oxygen and nitrogen atoms (e.g. H 2 O, GO, CO 2 , NH 3 ). Such ices, present in different astrophysical environments (giant planets satellites, comets, dense clouds, and protoplanetary disks), are subjected to irradiation of different energetic particles: UV radiation, ion bombardment (solar and stellar wind as well as galactic cosmic rays), and secondary electrons due to cosmic ray ionization of H 2 . The interaction of these particles with astrophysical ice analogs has been the object of research over the last decades. However, there is a lack of information on the effects induced by the heavy ion component of cosmic rays in the electronic energy loss regime. The aim of the present work is to simulate of the astrophysical environment where ice mantles are exposed to the heavy ion cosmic ray irradiation. Sample ice films at 13 K were irradiated by nickel ions with energies in the 1-10 MeV/u range and analyzed by means of FTIR spectrometry. Nickel ions were used because their energy deposition is similar to that deposited by iron ions, which are particularly abundant cosmic rays amongst the heaviest ones. In this work the effects caused by nickel ions on condensed gases are studied (destruction and production of molecules as well as associated cross sections, sputtering yields) and compared with respective values for light ions and UV photons. (authors)

  5. Influence of low energy N+ ions pre-treatment on damage effects of UV-B irradiation on M1 rice

    Zhao Shuaipeng; Huang Qunce; Chen Xueneng

    2011-01-01

    The seedlings of rice (xindao18) were exposed to UV-B (10.08 kJ/(m 2 ·d 1 )) irradiation following the pretreatment with three different implantation dosages of low-energy N + ions. Changes in the levels of the superoxide (POD), superoxide dismutase (SOD), catalase (CAT), malondialdehyde (MDA), glutathione (GSH) and soluble sugar were measured. The result showed that the UV-B irradiation on the seedlings of rice pretreated with low-energy ions implantation could lead to increase activities in POD and SOD, and the maximum appeared on the dose of 2.0 x 10 17 ions/cm 2 . Meanwhile, it made the content of GSH increased, and caused the activity of CAT and the content of MDA to be decreased. But there was no obvious change in soluble sugar. It was suggested that the rice pretreated by low energy ion implantation could enhance the antioxidation capacity and defensive ability when irradiated by UV-B, and the antioxidation system could be induced earlier than carbohydrate system. Therefore,the biological effects of UV-B irradiation on rice pretreated by low energy ion implantation were quite obvious. (authors)

  6. Combined quantum-mechanics/molecular-mechanics dynamics simulation of A-DNA double strands irradiated by ultra-low-energy carbon ions

    Ngaojampa, C.; Nimmanpipug, P. [Computer Simulation and Modeling Laboratory (CSML), Department of Chemistry and Center for Innovation Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.t [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Anuntalabhochai, S. [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Lee, V.S., E-mail: vannajan@gmail.co [Computer Simulation and Modeling Laboratory (CSML), Department of Chemistry and Center for Innovation Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2011-02-15

    In order to promote understanding of the fundamentals of ultra-low-energy ion interaction with DNA, molecular dynamics simulations using combined quantum-mechanics/molecular-mechanics of poly-AT and poly-GC A-DNA double strands irradiated by <200 eV carbon ions were performed to investigate the molecular implications of mutation bias. The simulations were focused on the responses of the DNA backbones and nitrogenous bases to irradiation. Analyses of the root mean square displacements of the backbones and non-hydrogen atoms of base rings of the simulated DNA structure after irradiation revealed a potential preference of DNA double strand separation, dependent on the irradiating energy. The results show that for the backbones, the large difference in the displacement between poly-GC and poly-AT in the initial time period could be the reason for the backbone breakage; for the nitrogenous base pairs, A-T is 30% more sensitive or vulnerable to ion irradiation than G-C, demonstrating a preferential, instead of random, effect of irradiation-induced mutation.

  7. Combined quantum-mechanics/molecular-mechanics dynamics simulation of A-DNA double strands irradiated by ultra-low-energy carbon ions

    Ngaojampa, C.; Nimmanpipug, P.; Yu, L.D.; Anuntalabhochai, S.; Lee, V.S.

    2011-01-01

    In order to promote understanding of the fundamentals of ultra-low-energy ion interaction with DNA, molecular dynamics simulations using combined quantum-mechanics/molecular-mechanics of poly-AT and poly-GC A-DNA double strands irradiated by <200 eV carbon ions were performed to investigate the molecular implications of mutation bias. The simulations were focused on the responses of the DNA backbones and nitrogenous bases to irradiation. Analyses of the root mean square displacements of the backbones and non-hydrogen atoms of base rings of the simulated DNA structure after irradiation revealed a potential preference of DNA double strand separation, dependent on the irradiating energy. The results show that for the backbones, the large difference in the displacement between poly-GC and poly-AT in the initial time period could be the reason for the backbone breakage; for the nitrogenous base pairs, A-T is 30% more sensitive or vulnerable to ion irradiation than G-C, demonstrating a preferential, instead of random, effect of irradiation-induced mutation.

  8. In-situ ionic conductivity measurement of lithium ceramics under high energy heavy ion irradiation

    Nakazawa, Tetsuya; Noda, Kenji; Ishii, Yoshinobu; Ohno, Hideo; Watanabe, Hitoshi; Matsui, Hisayuki.

    1992-01-01

    To obtain fundamental information regarding the radiation damage in some lithium ceramics, e.g. Li 2 O, Li 4 SiO 4 etc., candidate of breeder materials exposed to severe irradiation environment, an in-situ experiment technique for the ionic conductivity measurement, which allows the specimen temperature control and the beam current monitoring, have been developed. This paper describes the features of an apparatus to measure in situ the ionic conductivity under the irradiation environment and presents some results of ionic conductivity measured for typical ceramic breeders using this apparatus. (J.P.N.)

  9. A Preliminary Study of the Application of a Model Animal-Caenorhabidity elegans' Exposure to a Low-Energy Ion Irradiation System

    Liu Xuelan; Cai Kezhou; Feng Huiyun; Xu An; Yuan Hang; Yu Zengliang

    2007-01-01

    Because of the lack of suitable animal models adapted to high vacuum stress in the low-energy ion implantation system, the bio-effects ion irradiation with an energy less than 50 keV on multi-cellular animal individuals have never been investigated so far. The nematode Caenorhabditis elegans has proved to be an excellent animal model used for the study of a broad spectrum of biological issues. The purpose of this work was to investigate the viability of this animal under ion irradiation. We studied the protection effects of glycerol and trehalose on the enhancement of nematodes' ability to bear the vacuum stress. The results showed that the survival of the nematodes was enhanced remarkably under long and slow desiccation, even without glycerol and trehalose. 15% glycerol showed a better anti-vacuum stress effect on the nematodes than trehalose did under short-time desiccation. Low-temperature pre-treatment or post-treatment of the samples had no obvious effect on the survival scored after argon ion irradiation. Moreover, little effect was induced by 15% glycerol- and vacuum-exposure on germ cell apoptosis, compared to the untreated control sample. It issuggested that such treatment would provide relatively low background for genotoxic evaluations with ion irradiation

  10. Modeling description of thermoelastic stresses in materials at irradiation with high energy heavy ions

    Amirkhanov, I.V.; Didyk, A.Yu.; Muzafarov, D.Z.; Puzynin, I.V.; Puzynina, T.P.; Sarkar, N.R.; Sarkhadov, I.; Sharipov, Z.A.

    2009-01-01

    In the authors' previous works, formation and evolution of thermoelastic waves arising in metals under the action of pulsed ion beams in the framework of a system of thermoelasticity equations were investigated. In the present work, a numerical research of propagation of thermoelastic waves arising in metals under the action of pulsed ion beams in the framework of the two-temperature model taking into account electron gas and lattice temperatures (the thermal spike model) is carried out and a comparative analysis of the obtained results and results of the previous works is made

  11. Heavy ions amorphous semiconductors irradiation study

    Benmalek, M.

    1978-01-01

    The behavior of amorphous semiconductors (germanium and germanium and arsenic tellurides) under ion bombardment at energies up to 2 MeV was studied. The irradiation induced modifications were followed using electrical parameter changes (resistivity and activation energy) and by means of the transmission electron microscopy observations. The electrical conductivity enhancement of the irradiated samples was interpreted using the late conduction theories in amorphous compounds. In amorphous germanium, Electron Microscopy showed the formations of 'globules', these defects are similar to voids observed in irradiated metals. The displacement cascade theory was used for the interpretation of the irradiation induced defects formation and a coalescence mechanism of growth was pointed out for the vacancy agglomeration [fr

  12. Atomic mixing of metallic bilayers Ni/Ti irradiated with high energy heavy ions; Etude du melange ionique de bicouches metalliques Ni/Ti irradiees avec des ions lourds de haute energie

    Leguay, R

    1994-09-26

    We have studied the ionic mixing of Nl(105 angstrom) bilayers irradiated, at 80 and 300 K. with GeV heavy ions. In this energy range, the energy transfer from the incident ions to the target occurs mainly through electronic excitations. We have shown that this energy transfer induces a strong ionic mixing at the Nl/Ti interface. The thickness of the mixed interlayer increases with the fluence. At low fluences (10{sup 12} ions/cm{sup 2}), the Nl/Ti interface is rough ; at higher fluences (10{sup 13} ions/cm{sup 2}) a homogeneous mixed interlayer appears ; and at even higher fluences (some 10{sup 13} ions/cm{sup 2}) a preferential diffusion of Ni into Ti is clearly seen. The characterization techniques used are: (1) electrical resistivity measurements which allow to follow in situ the damage kinetic. (II) neutron and X-ray reflectometry. (III) elaboration of transverse cuts on which was performed energy loss spectroscopy. (II) and (III) allow the determination of the concentration profiles of the different species present in the sample. (IV) transmission electron microscopy on the transverse cuts which gives a direct image of the different layers. (author). 11 refs., 103 figs., 23 tabs., 2 appends.

  13. Energy and food irradiation

    Brynjolfsson, A.

    1978-01-01

    The energy used in food systems in the US amounts to about 16.5% of total US energy. An analysis has been made of the energy used in the many steps of the food-irradiation process. It is found that irradiation pasteurization uses only 21kJ/kg and radappertization 157kJ/kg, which is much less than the energy used in the other food processes. A comparison has also been made with other methods of preserving, distributing and preparing the meat for servings. It is found that the food irradiation can save significant amounts of energy. In the case of heat-sterilized and radiation-sterilized meats the largest fraction of the energy is used in the packaging, while in the frozen meats the largest energy consumption is by refrigeration in the distribution channels and in the home. (author)

  14. Temperature-dependent surface porosity of Nb{sub 2}O{sub 5} under high-flux, low-energy He{sup +} ion irradiation

    Novakowski, T.J., E-mail: tnovakow@purdue.edu; Tripathi, J.K.; Hosinski, G.M.; Joseph, G.; Hassanein, A.

    2016-01-30

    Graphical abstract: - Highlights: • Nb{sub 2}O{sub 5} surfaces are nanostructured with a novel He{sup +} ion irradiation process. • High-flux, low energy He{sup +} ion irradiation generates highly porous surfaces. • Top-down approach guarantees good contact between different crystallites. • Sample annealing demonstrates temperature effect on surface morphology. • Surface pore diameter increases with increasing temperature. - Abstract: The present study reports on high-flux, low-energy He{sup +} ion irradiation as a novel method of enhancing the surface porosity and surface area of naturally oxidized niobium (Nb). Our study shows that ion-irradiation-induced Nb surface micro- and nano-structures are highly tunable by varying the target temperature during ion bombardment. Mirror-polished Nb samples were irradiated with 100 eV He{sup +} ions at a flux of 1.2 × 10{sup 21} ions m{sup −2} s{sup −1} to a total fluence of 4.3 × 10{sup 24} ions m{sup −2} with simultaneous sample annealing in the temperature range of 773–1223 K to demonstrate the influence of sample temperature on the resulting Nb surface morphology. This surface morphology was primarily characterized using field-emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). Below 923 K, Nb surfaces form nano-scale tendrils and exhibit significant increases in surface porosity. Above 923 K, homogeneously populated nano-pores with an average diameter of ∼60 nm are observed in addition to a smaller population of sub-micron sized pores (up to ∼230 nm in diameter). Our analysis shows a significant reduction in surface pore number density and surface porosity with increasing sample temperature. High-resolution ex situ X-ray photoelectron spectroscopy (XPS) shows Nb{sub 2}O{sub 5} phase in all of the ion-irradiated samples. To further demonstrate the length scales in which radiation-induced surface roughening occurs, optical reflectivity was performed over a spectrum of

  15. An extended formula for the energy spectrum of sputtered atoms from a material irradiated by light ions

    Ono, T.; Aoki, Y.; Yamamura, Y.; Kawamura, T.; Kenmotsu, T.

    2004-10-01

    We extend a formula proposed by Kenmotsu et al. (hereafter Paper I), which fits with the energy spectrum of atoms sputtered from a heavy material hit by low-energy light ions (H + , D + , T + , He + ) by taking into account an inelastic energy loss neglected in Paper I. We assume that primary knock-on atoms produced by ions backscattered at large angles do not lose energy while penetrating the material up to the surface, instead of the energy-loss model used in Paper I. The extended formula is expressed in terms of a normalized energy-distribution function and is compared with the data calculated with the ACAT code for 50 eV, 100 eV and 1 keV D + ions impinging on a Fe target. Our formula fits well with the data in a wide range of incident energy. (author)

  16. Ions irradiation on bi-layer coatings

    Tessarolo, Enrico; Corso, Alain Jody; Böttger, Roman; Martucci, Alessandro; Pelizzo, Maria G.

    2017-09-01

    Future space missions will operate in very harsh and extreme environments. Optical and electronics components need to be optimized and qualified in view of such operational challenges. This work focuses on the effect of low alpha particles irradiation on coatings. Low energy He+ (4 keV and 16 keV) ions have been considered in order to simulate in laboratory the irradiation of solar wind (slow and fast components) alpha particles. Mono- and proper bi-layers coatings have been investigated. The experimental tests have been carried out changing doses as well as fluxes during the irradiation sessions. Optical characterization in the UV-VIS spectral range and superficial morphological analysis have performed prior and after irradiation.

  17. A thermal spike model of the amorphization of insulators by high-energy heavy-ion irradiation

    Szenes, G.

    1995-01-01

    Recently, experimental data on magnetic insulators irradiated with swift heavy ions were analyzed by a new thermal spike model and good quantitative agreement was achieved. Analytical expressions were given for the evolution of latent tracks with the electronic stopping power S e of bombarding ions and a relation between the thermal properties of the target and the threshold value of S e was proposed and proved experimentally. In the present paper, after a brief review of the model, the temperature dependence of latent track formation is discussed and the predictions of the model are compared with the available experimental results

  18. Tribology of silicon-thin-film-coated SiC ceramics and the effects of high energy ion irradiation

    Kohzaki, Masao; Noda, Shoji; Doi, Harua

    1990-01-01

    The sliding friction coefficients and specific wear of SiC ceramics coated with a silicon thin film (Si/SiC) with and without subsequent Ar + irradiation against a diamond pin were measured with a pin-on-disk tester at room temperature in laboratory air of approximately 50% relative humidity without oil lubrication for 40 h. The friction coefficient of Ar + -irradiated Si/SiC was about 0.05 with a normal load of 9.8 N and remained almost unchanged during the 40 h test, while that of SiC increased from 0.04 to 0.12 during the test. The silicon deposition also reduced the specific wear of SiC to less than one tenth of that of the uncoated SiC. Effectively no wear was detected in Si/SiC irradiated to doses of over 2x10 16 ions cm -2 . (orig.)

  19. A study on irradiation damage of solid 5'-dTMP implanted by low energy N+ ion beam

    Shao Chunlin; Yu Zengliang

    1995-01-01

    The yields of inorganic phosphate and base released from 5'-dTMP irradiated by 30 keV N + ion beam were investigated. The fluence effects of these yields and the influence with 0.1 mol/L NaOH treatment on them were presented. It was shown that the alkali treatment would not only increase the yield of inorganic phosphate, but also damage and then split base released from the irradiated 5'-dTMP. When the irradiated samples were treated with 0.1 mol/L NaOH immediately, the yield of inorganic phosphate was increased by a factor of 1.7 and the concentration of base decreased to half of that in the sample's water solution. Furthermore, the yield of inorganic phosphate would increase by a factor of 2.8 after 40 min of alkali treatment. Irradiation effects of ion beam were mainly direct ones and had a higher value of G(P i ), greater than 0.44 molecule/100 eV

  20. Research into releasing inorganic phosphate and base from 5'-dTMP irradiated by a low energy ion beam

    Shao Chunlin; Yu Zengliang

    1994-01-01

    Research into radiation damage of nucleotide is an important area in radiation biology. In this paper, the yield of inorganic phosphate and base released from 5'-dTMP irradiated by a 30 keV N + ion beam was investigated in several aspects. The effect of particle fluence on yield and the influence of treatment with 0.1 N NaOH was deduced. By analysis, it is known that the alkali treatment not only increases the yield of inorganic phosphate, but also damages and splits the base released from irradiated 5'-dTMP. When the irradiated samples are treated by 0.1 N NaOH immediately, the yield of inorganic phosphate is increased by a factor of 1.7 and the concentration of base decreased to half of the original value. But the yield of inorganic phosphate could be increased by a factor of 2.8 after 40 min of alkali treatment. On the other hand, when 5'dTMP was irradiated by the ion beam, the G(Pi) obtained was above 0.44, higher than with γ-radiation. (Author)

  1. Spectroscopic characterization of ion-irradiated multi-layer graphenes

    Tsukagoshi, Akira [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Honda, Shin-ichi, E-mail: s-honda@eng.u-hyogo.ac.jp [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Osugi, Ryo [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Okada, Hiraku [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); Niibe, Masahito [Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205 (Japan); Terasawa, Mititaka [Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Hirase, Ryuji; Izumi, Hirokazu; Yoshioka, Hideki [Hyogo Prefectural Institute of Technology, Kobe 654-0037 (Japan); Niwase, Keisuke [Hyogo University of Teacher Education, Kato, Hyogo 673-1494 (Japan); Taguchi, Eiji [Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Ibaraki, Osaka 567-0047 (Japan); Lee, Kuei-Yi [Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Oura, Masaki [RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan)

    2013-11-15

    Low-energy Ar ions (0.5–2 keV) were irradiated to multi-layer graphenes and the damage process, the local electronic states, and the degree of alignment of the basal plane, and the oxidation process upon ion irradiation were investigated by Raman spectroscopy, soft X-ray absorption spectroscopy (XAS) and in situ X-ray photoelectron spectroscopy (XPS). By Raman spectroscopy, we observed two stages similar to the case of irradiated graphite, which should relate to the accumulations of vacancies and turbulence of the basal plane, respectively. XAS analysis indicated that the number of sp{sup 2}-hybridized carbon (sp{sup 2}-C) atoms decreased after ion irradiation. Angle-resolved XAS revealed that the orientation parameter (OP) decreased with increasing ion energy and fluence, reflecting the turbulence of the basal plane under irradiation. In situ XPS shows the oxidation of the irradiated multi-layer graphenes after air exposure.

  2. Changes of surface structure of Ni, W and chromium-nickel steel Cr18Ni10 irradiated by high fluences of krypton ions with high energies

    Didyk, A.Yu.; Semina, V.K.; Khalil, A.; Suvorov, A.L.; Stepanov, A.Eh.; Cheblukov, Yu.N.

    1999-01-01

    The surfaces of W single crystal, Ni polycrystal and chromium-nickel steel, irradiated by Kr ions with energy 305 and 245 MeV up to the fluences 2*10 15 and 3*10 15 ion/cm 2 , were studied by means of scanning electron microscopy. The evaporation coefficients of material surfaces were estimated on the base of changes of surface relief. The values of these coefficients turned out much more than ones predicted by the inelastic sputtering model. The method of 'step' was offered and realized for the more correct estimations evaporation coefficient on the Ni example. The phenomenological model explaining the observed phenomena is introduced

  3. M-line spectroscopic, spectroscopic ellipsometric and microscopic measurements of optical waveguides fabricated by MeV-energy N{sup +} ion irradiation for telecom applications

    Bányász, I., E-mail: banyasz@sunserv.kfki.hu [Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O.B. 49, H-1525, Budapest (Hungary); Berneschi, S. [“Enrico Fermi” Center for Study and Research, Piazza del Viminale 2, 00184 Roma (Italy); MDF-Lab, “Nello Carrara” Institute of Applied Physics, IFAC-CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy); Fried, M.; Lohner, T. [Institute of Technical Physics and Materials Science, Research Centre for Natural Sciences, Hungarian Academy of Sciences, P.O.B. 49, H-1525, Budapest (Hungary); Conti, G. Nunzi; Righini, G.C.; Pelli, S. [MDF-Lab, “Nello Carrara” Institute of Applied Physics, IFAC-CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy); Zolnai, Z. [Institute of Technical Physics and Materials Science, Research Centre for Natural Sciences, Hungarian Academy of Sciences, P.O.B. 49, H-1525, Budapest (Hungary)

    2013-08-31

    Irradiation with N{sup +} ions of the 1.5–3.5 MeV energy range was applied to optical waveguide formation. Planar and channel waveguides have been fabricated in an Er-doped tungsten–tellurite glass, and in both types of bismuth germanate (BGO) crystals: Bi{sub 4}Ge{sub 3}O{sub 12} (eulytine) and Bi{sub 12}GeO{sub 20} (sillenite). Multi-wavelength m-line spectroscopy and spectroscopic ellipsometry were used for the characterisation of the ion beam irradiated waveguides. Planar waveguides fabricated in the Er-doped tungsten–tellurite glass using irradiation with N{sup +} ions at 3.5 MeV worked even at the 1550 nm telecommunication wavelength. 3.5 MeV N{sup +} ion irradiated planar waveguides in eulytine-type BGO worked up to 1550 nm and those in sillenite-type BGO worked up to 1330 nm. - Highlights: ► Waveguides were fabricated in glass and crystals using MeV energy N{sup +} ions. ► SRIM simulation and spectroscopic ellipsometry yielded similar waveguide structures. ► Multi-wavelength m-line spectroscopy was used to study the waveguides. ► Waveguides fabricated in an Er-doped tungsten–tellurite glass worked up to 1.5 μm. ► Waveguides in Bi{sub 12}GeO{sub 20} remained operative up to 1.5 μm.

  4. Strong field-matching effects in superconducting YBa2Cu3O7-δ films with vortex energy landscapes engineered via masked ion irradiation

    Swiecicki, I.; Ulysse, C.; Wolf, T.; Bernard, R.; Bergeal, N.; Briatico, J.; Faini, G.; Lesueur, J.; Villegas, Javier E.

    2012-06-01

    We have developed a masked ion irradiation technique to engineer the energy landscape for vortices in oxide superconductors. This approach associates the possibility to design the landscape geometry at the nanoscale with the unique capability to adjust the depth of the energy wells for vortices. This enabled us to unveil the key role of vortex channeling in modulating the amplitude of the field matching effects with the artificial energy landscape, and to make the latter govern flux dynamics over an unusually wide range of temperatures and applied fields for high-temperature superconducting films.

  5. Progress and tendency in heavy ion irradiation mutation breeding

    Zhou Libin; Li Wenjian; Qu Ying; Li Ping

    2008-01-01

    In recent years, the intermediate energy heavy ion biology has been concerned rarely comparing to that of the low-energy ions. In this paper, we summarized the advantage of a new mutation breeding method mediated by intermediate energy heavy ion irradiations. Meanwhile, the present state of this mutation technique in applications of the breeding in grain crops, cash crops and model plants were introduced. And the preview of the heavy ion irradiations in gene-transfer, molecular marker assisted selection and spaceflight mutation breeding operations were also presented. (authors)

  6. Ion beam techniques for analyzing polymers irradiated by ions

    Rickards, J.; Zironi, E.P.; Andrade, E.; Dominguez, B.

    1992-01-01

    In the study of the effects of ion beam irradiation of polymers very large doses can be administered in short times. Thousands of MGy can be produced in a small volume of a sample in a few minutes by bombarding with typical ion beam currents. For instance, in an experiment done to observe the effects of 750 keV proton irradiation PVC, using a collimator of 1 mm diameter, 1 μC of charge integration deposits a dose of 50 MGy. The use of ion beams also opens up the possibility of using the same beam for irradiation and for analysis of the effects, using the well known ion beam analysis techniques. PIXE allows the measurement of chlorine in PVC. Polymers containing fluorine can be measured with the resonant nuclear reaction (RNR) technique, which is specific only to certain elements. The amount of hydrogen in the sample and its profile can be obtained using energy recoil detection analysis (ERDA); carbon, oxygen, and nitrogen can be measured and profiled using Rutherford backscattering (RBS) and also using the (d,p) and (d, α) nuclear reactions (NR). Loss of mass is one effect that can be studied using these techniques. It was studied in two different polymers, PVC and CR-39, in order to determine carbon buildup during ion irradiation. It was concluded that carbon builds up following different mechanisms in these two materials, due to the different possibilities of forming volatile compounds. It is also suggested that CR-39 should be a good material for ion beam lithography. (author)

  7. Studies on watermelon somatic cell mutant of resistance to fusaric acid (FA) by low energy Ar+ ion beam irradiation

    Wang Haobo; Gu Yunhong; Cheng Guowang; Yu Zengliang

    2003-01-01

    Three kinds of watermelon seeds irradiated by Ar + ion beam (25 keV, 6.24 x 10 16 ions/cm 2 ) were inoculated in MS medium with 15 mg/L FA. Cotyledons from the sterile seedling as explants were inoculated in MS +BA 2.0 mg/L + FA 15 mg/L. And the adventitious shoots of resistance to FA were cultured in MS + NAA 0.2 mg/L + FA 15 mg/L. The results showed that both the irradiation of Ar + and FA affected the germination rate and seedling of watermelon line 3-27 and YH-5, and the joint effect of Ar + and FA showed an enhanced restraint. The adventitious shoot and rootage induction rate from the seeds irradiated by Ar + were respectively bigger than the unirradiated seeds in 3-27 and YH-5. The increasing ranges were different between two watermelon lines and between the shoot and rootage induction rates

  8. Scanning ion irradiation of polyimide films

    Luecken, Stefan; Koval, Yuri; Mueller, Paul [Department of Physics and Interdisciplinary Center for Molecular Materials (ICMM), Universitaet Erlangen-Nuernberg (Germany)

    2012-07-01

    Recently we found, that the surface of nearly any polymer can be converted into conductive material by low energy ion irradiation. The graphitized layer consists of nanometer sized graphene and graphite flakes. In order to enhance the conductivity and to increase the size of the flakes we applied a novel method of scanning irradiation. We investigated the influence of various irradiation parameters on the conductivity of the graphitized layer. We show, that the conductance vs. temperature can be described in terms of weak Anderson localization. At approximately 70 K, a crossover occurs from 2-dimensional to 3-dimensional behavior. This can be explained by a decrease of the Thouless length with increasing temperature. The crossover temperature can be used to estimate the thickness of the graphitized layer.

  9. Temperature annealing of tracks induced by ion irradiation of graphite

    Liu, J.; Yao, H.J.; Sun, Y.M.; Duan, J.L.; Hou, M.D.; Mo, D.; Wang, Z.G.; Jin, Y.F.; Abe, H.; Li, Z.C.; Sekimura, N.

    2006-01-01

    Highly oriented pyrolytic graphite (HOPG) samples were irradiated by Xe ions of initial kinetic energy of 3 MeV/u. The irradiations were performed at temperatures of 500 and 800 K. Scanning tunneling microscopy (STM) images show that the tracks occasionally have elongated structures under high-temperature irradiation. The track creation yield at 800 K is by three orders of magnitude smaller compared to that obtained during room-temperature irradiation. STM and Raman spectra show that amorphization occurs in graphite samples irradiated at 500 K to higher fluences, but not at 800 K. The obtained experimental results clearly reveal that the irradiation under high temperature causes track annealing

  10. Investigations of electrical and optical properties of low energy ion irradiated α-Fe{sub 2}O{sub 3} (hematite) thin films

    Sulania, Indra; Kanjilal, D. [Inter University Accelerator Centre, P O Box-10502, Aruna Asaf Ali Marg, New Delhi-110067 (India); Kaswan, Jyoti; Attatappa, Vinesh [Department of physics, Amity University, Manesar-122 413, Haryana (India); Karn, Ranjeet Kumar [Jamshedpur Cooperative College, Circuit House Area, Jamshedpur-831001, Jharkhand (India); Agarwal, D. C. [Sant Longowal Institute of Engineering and Technology, Sangrur, Longowal-148106, Punjab (India)

    2016-05-23

    Thin films of α-Fe{sub 2}O{sub 3} of thickness ~100 nm were synthesized on Si (100) and glass substrates by thermal evaporation method. The as deposited films were annealed at 400°C in Oxygen environment for 2 hours to obtain the desired phase. The annealed films found to be polycrystalline in nature with an average crystallite size ~7 nm. The direct and indirect band gaps were found to be 2.2 and 1.5 eV respectively for annealed films using. I-V characteristics and Hall-effect measurement of annealed films showed n-type semi conducting behavior. Further, films were irradiated with nitrogen ions of energy 10 keV at an ion fluence of 1×10{sup 18} ions/cm{sup 2}. After irradiation, a decrease in both direct as well as indirect band gap was observed, from 2.2 to 2.1 eV and 1.5 to 1.3 eV respectively. I-V characteristic and Hall-Effect measurement confirmed change in conductivity of the films from n-type to p-type after irradiation, which can have possible applications in semi conducting device fabrications.

  11. In situ X-ray diffraction study of irradiation-induced lattice expansion in Al foils by MeV-energy heavy ions

    Minagawa, Hideaki [Department of Nuclear Engineering, Kyoto University, Kyoto 615-8530 (Japan); Tsuchida, Hidetsugu, E-mail: tsuchida@nucleng.kyoto-u.ac.jp [Department of Nuclear Engineering, Kyoto University, Kyoto 615-8530 (Japan); Quantum Science and Engineering Center, Kyoto University, Uji 611-0011 (Japan); Murase, Ryu [Department of Nuclear Engineering, Kyoto University, Kyoto 615-8530 (Japan); Itoh, Akio [Department of Nuclear Engineering, Kyoto University, Kyoto 615-8530 (Japan); Quantum Science and Engineering Center, Kyoto University, Uji 611-0011 (Japan)

    2016-04-01

    Using in situ X-ray diffraction measurements, we investigate lattice deformations of a free-standing aluminum foil induced by irradiation with MeV-energy heavy projectiles (C, O, and Si ions). The dependence of the ion-beam flux on the lattice expansion is analyzed in terms of two types of irradiation effects: (i) electronic excitation collision-induced lattice heating and (ii) elastic collision-induced displacement damage. We observe that the change in the lattice parameter is proportional to the energy in lattice heating, irrespective of projectile species. This result is in good agreement with a model calculation for thermal lattice expansion caused by beam heating. Moreover, with the correlation between lattice expansion and displacement damage, we consider a simple model for lattice expansion originating from the accumulation of Frenkel defects. From the model, we obtained the relationship between the relative changes in lattice parameter and the value of displacement per atom (dpa) rate. A comparison of the results from model calculations and experiments shows that the dpa rate calculated from the model, which takes account of athermal defect-recombination, is strongly correlated with the change in lattice parameter. This result suggests that the concentration of surviving defects under irradiation diminishes because of spontaneous recombination of defects produced.

  12. Radiation hardening of metals irradiated by heavy ions

    Didyk, A.Yu.; Skuratov, V.A.; Mikhajlova, N.Yu.; Regel', V.R.

    1988-01-01

    The damage dose dependence in the 10 -4 -10 -2 dpa region of radiation hardening of Al, V, Ni, Cu irradiated by xenon ions with 124 MeV energy is investigated using the microhardness technique and transmission electron microscope. It is shown that the pure metals radiation hardening is stimulated for defects clusters with the typical size less than 5 nm, as in the case of neutron and the light charge ion irradiation

  13. Anti-biofilm activity of Fe heavy ion irradiated polycarbonate

    Joshi, R.P. [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Hareesh, K., E-mail: appi.2907@gmail.com [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Bankar, A. [Department of Microbiology, Waghire College, Pune 412301 (India); Sanjeev, Ganesh [Microtron Centre, Department of Studies in Physics, Mangalore University, Mangalore 574166 (India); Asokan, K.; Kanjilal, D. [Inter University Accelerator Centre, Arun Asaf Ali Marg, New Delhi 110067 (India); Dahiwale, S.S.; Bhoraskar, V.N. [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Dhole, S.D., E-mail: sanjay@physics.unipune.ac.in [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

    2016-10-01

    Highlights: • PC films were irradiated by 60 and 120 MeV Fe ions. • Irradiated PC films showed changes in its physical and chemical properties. • Irradiated PC also showed more anti-biofilm activity compared to pristine PC. - Abstract: Polycarbonate (PC) polymers were investigated before and after high energy heavy ion irradiation for anti-bacterial properties. These PC films were irradiated by Fe heavy ions with two energies, viz, 60 and 120 MeV, at different fluences in the range from 1 × 10{sup 11} ions/cm{sup 2} to 1 × 10{sup 13} ions/cm{sup 2}. UV-Visible spectroscopic results showed optical band gap decreased with increase in ion fluences due to chain scission mainly at carbonyl group of PC which is also corroborated by Fourier transform infrared spectroscopic results. X-ray diffractogram results showed decrease in crystallinity of PC after irradiation which leads to decrease in molecular weight. This is confirmed by rheological studies and also by differential scanning calorimetric results. The irradiated PC samples showed modification in their surfaces prevents biofilm formation of human pathogen, Salmonella typhi.

  14. A study on the effect of low energy ion beam irradiation on Au/TiO_2 system for its application in photoelectrochemical splitting of water

    Verma, Anuradha; Srivastav, Anupam; Sharma, Dipika; Banerjee, Anamika; Sharma, Shailja; Satsangi, Vibha Rani; Shrivastav, Rohit; Avasthi, Devesh Kumar; Dass, Sahab

    2016-01-01

    Nanostructured TiO_2 thin films were deposited on indium tin oxide (ITO) substrate via sol–gel technique and were modified by plasmonic Au layer. The plasmonic Au modified TiO_2 (Au/TiO_2) thin films were then irradiated with 500 keV Ar"2"+ ion beam at different ion fluences viz. 1 × 10"1"6, 3 × 10"1"6 and 1 × 10"1"7 to study the effect of nuclear energy deposition on the morphology, crystallinity, band gap, surface plasmon resonance (SPR) peak exhibited by Au particles and photoelectrochemical properties of the system. Prepared thin films were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM), Rutherford backscattering spectrometry (RBS) measurements and UV–visible spectroscopy. The photoelectrochemical measurements revealed that both Au/TiO_2 and Au/TiO_2 thin film irradiated at 1 × 10"1"6 fluence exhibits enhanced photoelectrochemical response in comparison to pristine TiO_2. The film irradiated at 1 × 10"1"6 fluence offered maximum applied bias photon-to-current efficiency (ABPE) and shows 6 times increment in photocurrent density which was attributed to more negative flat band potential, maximum decrease in band gap, high open circuit voltage (V_o_c) and reduced charge transfer resistance.

  15. Effect of irradiation temperature on microstructural changes in self-ion irradiated austenitic stainless steel

    Jin, Hyung-Ha; Ko, Eunsol; Lim, Sangyeob; Kwon, Junhyun; Shin, Chansun

    2017-09-01

    We investigated the microstructural and hardness changes in austenitic stainless steel after Fe ion irradiation at 400, 300, and 200 °C using transmission electron microscopy (TEM) and nanoindentation. The size of the Frank loops increased and the density decreased with increasing irradiation temperature. Radiation-induced segregation (RIS) was detected across high-angle grain boundaries, and the degree of RIS increases with increasing irradiation temperature. Ni-Si clusters were observed using high-resolution TEM in the sample irradiated at 400 °C. The results of this work are compared with the literature data of self-ion and proton irradiation at comparable temperatures and damage levels on stainless steels with a similar material composition with this study. Despite the differences in dose rate, alloy composition and incident ion energy, the irradiation temperature dependence of RIS and the size and density of radiation defects followed the same trends, and were very comparable in magnitude.

  16. Studies of defects on ion irradiated diamond

    Lai, P F; Prawer, S; Spargo, A E.C.; Bursill, L A [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-12-31

    It is known that diamond is amorphized or graphitized when irradiated above a critical dose. Above this critical dose, D{sub c}, the resistance R is found to drop very rapidly due to the formation of graphite regions which overlap at D{sub c} to form a semi-continuous electrically conducting pathway through the sample. One particularly interesting method of studying this transformation is electron energy-loss spectroscopy (EELS). Using EELS, the different phases of carbon can be identified and distinguished from each other using the extended energy-loss fine structure (EXELFS) of the core-loss part of the spectrum. EELS is a sensitive method for determining the electronic structure of small areas of a sample. In this paper, transmission electron microscopy (TEM) and EELS measurements of the ion irradiated diamond were combined in an attempt to correlate the microstructural nature of the ion-beam induced damage to the changes in the electrical and other properties. 7 refs., 1 tab., 2 figs.

  17. Studies of defects on ion irradiated diamond

    Lai, P.F.; Prawer, S.; Spargo, A.E.C.; Bursill, L.A. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    It is known that diamond is amorphized or graphitized when irradiated above a critical dose. Above this critical dose, D{sub c}, the resistance R is found to drop very rapidly due to the formation of graphite regions which overlap at D{sub c} to form a semi-continuous electrically conducting pathway through the sample. One particularly interesting method of studying this transformation is electron energy-loss spectroscopy (EELS). Using EELS, the different phases of carbon can be identified and distinguished from each other using the extended energy-loss fine structure (EXELFS) of the core-loss part of the spectrum. EELS is a sensitive method for determining the electronic structure of small areas of a sample. In this paper, transmission electron microscopy (TEM) and EELS measurements of the ion irradiated diamond were combined in an attempt to correlate the microstructural nature of the ion-beam induced damage to the changes in the electrical and other properties. 7 refs., 1 tab., 2 figs.

  18. Irradiation effects of Ar cluster ion beams on Si substrates

    Ishii, Masahiro; Sugahara, Gaku; Takaoka, G.H.; Yamada, Isao

    1993-01-01

    Gas-cluster ion beams can be applied to new surface modification techniques such as surface cleaning, low damage sputtering and shallow junction formation. The effects of energetic Ar cluster impacts on solid surface were studied for cluster energies of 10-30keV. Irradiation effects were studied by RBS. For Si(111) substrates, irradiated with Ar ≥500 clusters to a dose of 1x10 15 ion/cm 2 at acceleration voltage 15kV, 2x10 14 atoms/cm 2 implanted Ar atoms were detected. In this case, the energy per cluster atom was smaller than 30eV; at this energy, no significant implantation occurs in the case of monomer ions. Ar cluster implantation into Si substrates occurred due to the high energy density irradiation. (author)

  19. Damage nucleation in Si during ion irradiation

    Holland, O.W.; Fathy, D.; Narayan, J.

    1984-01-01

    Damage nucleation in single crystals of silicon during ion irradiation is investigated. Experimental results and mechanisms for damage nucleation during both room and liquid nitrogen temperature irradiation with different mass ions are discussed. It is shown that the accumulation of damage during room temperature irradiation depends on the rate of implantation. These dose rate effects are found to decrease in magnitude as the mass of the ions is increased. The significance of dose rate effects and their mass dependence on nucleation mechanisms is discussed

  20. Tuning of the optical properties of In-rich In{sub x}Ga{sub 1−x}N (x=0.82−0.49) alloys by light-ion irradiation at low energy

    De Luca, Marta; Polimeni, Antonio; Capizzi, Mario [Dipartimento di Fisica, Sapienza Università di Roma, P.le A. Moro 2, 00185 Roma (Italy); Pettinari, Giorgio [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Ciatto, Gianluca; Fonda, Emiliano [Synchrotron SOLEIL, L' Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif sur Yvette Cedex (France); Amidani, Lucia; Boscherini, Federico [Department of Physics and CNISM, University of Bologna, V. le C. Berti Pichat 6/2, 40127 Bologna (Italy); Filippone, Francesco; Bonapasta, Aldo Amore [CNR-Istituto di Struttura della Materia (ISM), Via Salaria Km 29.5, CP 10, I-00016 Monterotondo Stazione (Italy); Knübel, Andreas; Cimalla, Volker; Ambacher, Oliver [Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg (Germany); Giubertoni, Damiano; Bersani, Massimo [CMM - Fondazione Bruno Kessler, Trieste, via Sommarive 18, 38100, Povo Trento (Italy)

    2013-12-04

    The effects of low-energy irradiation by light ions (H and He) on the properties of In-rich In{sub x}Ga{sub 1−x}N alloys are investigated by optical and structural techniques. H-irradiation gives rise to a remarkable blue-shift of light emission and absorption edge energies. X-ray absorption measurements and first-principle calculations address the microscopic origin of these effects.

  1. Tuning of the optical properties of In-rich InxGa1−xN (x=0.82−0.49) alloys by light-ion irradiation at low energy

    De Luca, Marta; Polimeni, Antonio; Capizzi, Mario; Pettinari, Giorgio; Ciatto, Gianluca; Fonda, Emiliano; Amidani, Lucia; Boscherini, Federico; Filippone, Francesco; Bonapasta, Aldo Amore; Knübel, Andreas; Cimalla, Volker; Ambacher, Oliver; Giubertoni, Damiano; Bersani, Massimo

    2013-01-01

    The effects of low-energy irradiation by light ions (H and He) on the properties of In-rich In x Ga 1−x N alloys are investigated by optical and structural techniques. H-irradiation gives rise to a remarkable blue-shift of light emission and absorption edge energies. X-ray absorption measurements and first-principle calculations address the microscopic origin of these effects

  2. Solutions to defect-related problems in implanted silicon by controlled injection of vacancies by high-energy ion irradiation

    Roth, E.G.; Holland, O.W.; Duggan, J.L.

    1999-01-01

    Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type defects that form below the amorphous-crystalline interface during implantation. A dual implantation process was applied in an attempt to reduce or eliminate this interfacial defect band. High-energy, ion implantation is known to inject a vacancy excess in this region. Vacancies were implanted at a concentration coincident with the excess interstitials below the a-c interface to promote recombination between the two defect species. Preliminary results indicate that a critical fluence, i.e., a sufficient vacancy concentration, will eliminate the interstitial defects. The effect of the reduction or elimination of these interfacial defects upon TED of boron will be discussed. Rutherford backscattering/channeling and cross section transmission electron microscopy analyses were used to characterize the defect structure within the implanted layer. Secondary ion mass spectrometry was used to profile the dopant distributions. copyright 1999 American Institute of Physics

  3. The effect of fission-energy Xe ion irradiation on the structural integrity and dissolution of the CeO{sub 2} matrix

    Popel, A.J., E-mail: apopel@cantab.net [Department of Earth Sciences, University of Cambridge, Downing Street, Cambridge, CB2 3EQ (United Kingdom); Department of Materials, Imperial College London, London, SW7 2AZ (United Kingdom); Le Solliec, S.; Lampronti, G.I.; Day, J. [Department of Earth Sciences, University of Cambridge, Downing Street, Cambridge, CB2 3EQ (United Kingdom); Petrov, P.K. [Department of Materials and London Centre for Nanotechnology, Imperial College London, London, SW7 2AZ (United Kingdom); Farnan, I. [Department of Earth Sciences, University of Cambridge, Downing Street, Cambridge, CB2 3EQ (United Kingdom)

    2017-02-15

    This work considers the effect of fission fragment damage on the structural integrity and dissolution of the CeO{sub 2} matrix in water, as a simulant for the UO{sub 2} matrix of spent nuclear fuel. For this purpose, thin films of CeO{sub 2} on Si substrates were produced and irradiated by 92 MeV {sup 129}Xe{sup 23+} ions to a fluence of 4.8 × 10{sup 15} ions/cm{sup 2} to simulate fission damage that occurs within nuclear fuels along with bulk CeO{sub 2} samples. The irradiated and unirradiated samples were characterised and a static batch dissolution experiment was conducted to study the effect of the induced irradiation damage on dissolution of the CeO{sub 2} matrix. Complex restructuring took place in the irradiated films and the irradiated samples showed an increase in the amount of dissolved cerium, as compared to the corresponding unirradiated samples. Secondary phases were also observed on the surface of the irradiated CeO{sub 2} films after the dissolution experiment. - Highlights: • Ion irradiation induced microstructural rearrangements in CeO{sub 2} thin films. • Ion irradiation reduced aqueous durability of bulk and thin film CeO{sub 2} samples. • Secondary phases observed from dissolution of irradiated CeO{sub 2} films in di-water.

  4. Effect of swift heavy ion-irradiation on Cr/Fe/Ni multilayers

    Gupta, Ratnesh; Gupta, Ajay; Avasthi, D.K.; Principi, G.; Tosello, C.

    1999-01-01

    A multilayer film having overall composition Fe 50 Cr 25 Ni 25 , was irradiated successively by 80 MeV Si ions and Ag ions of 150 and 200 MeV energy. The energy deposited in the multilayer in the form of electronic excitations results in significant modification at the interfaces. The interfacial roughness increases in the system after the irradiations as revealed by X-ray reflectivity measurement. Moessbauer measurements provide evidence of intermixing after the irradiation by 200 MeV Ag ions. Comparison of heavy ion irradiated multilayer has been done with annealed and low energy ion irradiated samples. Results suggest that the phases formed at the interfaces of iron as a result of electronic energy loss are similar to those in the cases of thermal diffusion and keV energy ion beam irradiation

  5. Heavy-ion irradiation induced diamond formation in carbonaceous materials

    Daulton, T. L.

    1999-01-01

    The basic mechanisms of metastable phase formation produced under highly non-equilibrium thermodynamic conditions within high-energy particle tracks are investigated. In particular, the possible formation of diamond by heavy-ion irradiation of graphite at ambient temperature is examined. This work was motivated, in part, by earlier studies which discovered nanometer-grain polycrystalline diamond aggregates of submicron-size in uranium-rich carbonaceous mineral assemblages of Precambrian age. It was proposed that the radioactive decay of uranium formed diamond in the fission particle tracks produced in the carbonaceous minerals. To test the hypothesis that nanodiamonds can form by ion irradiation, fine-grain polycrystalline graphite sheets were irradiated with 400 MeV Kr ions. The ion irradiated graphite (and unirradiated graphite control) were then subjected to acid dissolution treatments to remove the graphite and isolate any diamonds that were produced. The acid residues were then characterized by analytical and high-resolution transmission electron microscopy. The acid residues of the ion-irradiated graphite were found to contain ppm concentrations of nanodiamonds, suggesting that ion irradiation of bulk graphite at ambient temperature can produce diamond

  6. Hydrogen retention in ion irradiated steels

    Hunn, J.D.; Lewis, M.B.; Lee, E.H.

    1998-01-01

    In the future 1--5 MW Spallation Neutron Source, target radiation damage will be accompanied by high levels of hydrogen and helium transmutation products. The authors have recently carried out investigations using simultaneous Fe/He,H multiple-ion implantations into 316 LN stainless steel between 50 and 350 C to simulate the type of radiation damage expected in spallation neutron sources. Hydrogen and helium were injected at appropriate energy and rate, while displacement damage was introduced by nuclear stopping of 3.5 MeV Fe + , 1 microm below the surface. Nanoindentation measurements showed a cumulative increase in hardness as a result of hydrogen and helium injection over and above the hardness increase due to the displacement damage alone. TEM investigation indicated the presence of small bubbles of the injected gases in the irradiated area. In the current experiment, the retention of hydrogen in irradiated steel was studied in order to better understand its contribution to the observed hardening. To achieve this, the deuterium isotope ( 2 H) was injected in place of natural hydrogen ( 1 H) during the implantation. Trapped deuterium was then profiled, at room temperature, using the high cross-section nuclear resonance reaction with 3 He. Results showed a surprisingly high concentration of deuterium to be retained in the irradiated steel at low temperature, especially in the presence of helium. There is indication that hydrogen retention at spallation neutron source relevant target temperatures may reach as high as 10%

  7. Low-energy ion irradiation in HiPIMS to enable anatase TiO2 selective growth

    Cemin, Felipe; Tsukamoto, Makoto; Keraudy, Julien; Antunes, Vinícius Gabriel; Helmersson, Ulf; Alvarez, Fernando; Minea, Tiberiu; Lundin, Daniel

    2018-06-01

    High power impulse magnetron sputtering (HiPIMS) has already demonstrated great potential for synthesizing the high-energy crystalline phase of titanium dioxide (rutile TiO2) due to large quantities of highly energetic ions present in the discharge. In this work, it is shown that the metastable anatase phase can also be obtained by HiPIMS. The required deposition conditions have been identified by systematically studying the phase formation, microstructure and chemical composition as a function of mode of target operation as well as of substrate temperature, working pressure, and peak current density. It is found that films deposited in the metal and transition modes are predominantly amorphous and contain substoichiometric TiO x compounds, while in compound mode they are well-crystallized and present only O2‑ ions bound to Ti4+, i.e. pure TiO2. Anatase TiO2 films are obtained for working pressures between 1 and 2 Pa, a peak current density of ~1 A cm‑2 and deposition temperatures lower than 300 °C. Rutile is favored at lower pressures (2 A cm‑2), while amorphous films are obtained at higher pressures (5 Pa). Microstructural characterization of selected films is also presented.

  8. Ion-irradiation-induced defects in bundles of carbon nanotubes

    Salonen, E.; Krasheninnikov, A.V.; Nordlund, K.

    2002-01-01

    We study the structure and formation yields of atomic-scale defects produced by low-dose Ar ion irradiation in bundles of single-wall carbon nanotubes. For this, we employ empirical potential molecular dynamics and simulate ion impact events over an energy range of 100-1000 eV. We show that the most common defects produced at all energies are vacancies on nanotube walls, which at low temperatures are metastable but long-lived defects. We further calculate the spatial distribution of the defects, which proved to be highly non-uniform. We also show that ion irradiation gives rise to the formations of inter-tube covalent bonds mediated by carbon recoils and nanotube lattice distortions due to dangling bond saturation. The number of inter-tube links, as well as the overall damage, linearly grows with the energy of incident ions

  9. Colloidal assemblies modified by ion irradiation

    Snoeks, E.; Blaaderen, A. van; Dillen, T. van; Kats, C.M. van; Velikov, K.P.; Brongersma, M.L.; Polman, A.

    2001-01-01

    Spherical SiO2 and ZnS colloidal particles show a dramatic anisotropic plastic deformation under 4 MeV Xe ion irradiation, that changes their shape into oblate into oblate ellipsional, with an aspect ratio that can be precisely controlled by the ion fluence. The 290 nm and 1.1 um diameter colloids

  10. Irradiation swelling in self-ion irradiated niobium

    Bajaj, R.; Shiels, S.A.; Hall, B.O.; Fenske, G.R.

    1987-01-01

    This paper presents initial results of an investigation of swelling mechanisms in a model body centered cubic (bcc) metal, niobium, irradiated at elevated temperatures (0.3 T/sub m/ to 0.6 T/sub m/) where T/sub m/ = melting point in K. The objective of this work is to achieve an understanding of the elevated temperature swelling in bcc metals, which are the prime candidate alloys and composite matrix materials for space reactor applications. Niobium was irradiated with 5.3 MeV Nb ++ ions, at temperatures ranging from 700 0 C to 1300 0 C, to a nominal dose of 50 dpa at a dose rate of 6 x 10 -3 dpas. Swelling was observed over a temperature range of 700 0 C to 1200 0 C, with a peak swelling of 7% at 900 0 C. The microstructural data, obtained from transmission electron microscopy, were compared to the predictions of the theoretical model developed during this program. A reasonable agreement was obtained between the experimental measurements of swelling and theoretical predictions by adjusting both the niobium-oxygen binding energy and the incubation dose for swelling to realistic values

  11. Colloidal assemblies modified by ion irradiation

    Snoeks, E.; Blaaderen, A. van; Dillen, T. van; Kats, C.M. van; Velikov, K.P.; Brongersma, M.L.; Polman, A.

    2001-01-01

    Spherical SiO2 and ZnS colloidal particles show a dramatic anisotropic plastic deformation under 4 MeV Xe ion irradiation, that changes their shape into oblate into oblate ellipsional, with an aspect ratio that can be precisely controlled by the ion fluence. The 290 nm and 1.1 um diameter colloids were deposited on a Si substrate and irradiated at 90 K, using fluences in the range 3*10^(13)-8*10^(14) cm^(-2). The transverse particle diameter shows a linear increase with ion fluence, while the...

  12. CoSi2 growth on Si(001) by reactive deposition epitaxy: Effects of high-flux, low-energy ion irradiation

    Lim, C. W.; Greene, J. E.; Petrov, I.

    2006-01-01

    CoSi 2 layers, CoSi 2 (parallel sign)(001) Si and [100] CoSi 2 (parallel sign)[100] Si , contain fourfold symmetric (111) twinned domains oriented such that (221) CoSi 2 (parallel sign)(001) Si and CoSi 2 (parallel sign)[110] Si . We demonstrate that high-flux low-energy (E Ar + =9.6 eV) Ar + ion irradiation during deposition dramatically increases the area fraction f u of untwinned regions from 0.17 in films grown under standard magnetically balanced conditions in which the ratio J Ar + /J Co of the incident Ar + to Co fluxes is 1.4 to 0.72 with J Ar + /J Co =13.3. TEM analyses show that the early stages of RDE CoSi 2 (001) film growth proceed via the Volmer-Weber mode with independent nucleation of both untwinned and twinned islands. Increasing J Ar + /J Co results in larger values of both the number density and area of untwinned with respect to twinned islands. The intense Ar + ion bombardment creates additional low-energy adsorption sites that favor the nucleation of untwinned islands while collisionally enhancing Co surface mobilities which, in turn, increases the probability of itinerant Co adatoms reaching these sites

  13. Softening of metals under hydrogen ion irradiation

    Guseva, M.I.; Korshunov, S.N.; Martynenko, Yu.V.; Skorlupkin, I.D.

    2005-01-01

    Experimental study results are presented on steel type 18-10 creep under hydrogen ion irradiation. The Irradiation of annealed specimens is accomplished by 15 keV H 2 + ions with a dose up to 10 22 m -2 at current density of 0.6 A/m 2 at temperatures of 570-770 K. Creep tests show that the irradiation at T = 770 K results in a sharp increase of creep rate. At t 570 K the effect of ion-induced creep in steel 18-10 is not observed. The model is proposed which explains the ion-induced creep by accumulation of hydrogen along grain boundaries, their weakening and removal of obstacles to sliding [ru

  14. Heavy Ion Irradiation Effects in Zirconium Nitride

    Egeland, G.W.; Bond, G.M.; Valdez, J.A.; Swadener, J.G.; McClellan, K.J.; Maloy, S.A.; Sickafus, K.E.; Oliver, B.

    2004-01-01

    Polycrystalline zirconium nitride (ZrN) samples were irradiated with He + , Kr ++ , and Xe ++ ions to high (>1.10 16 ions/cm 2 ) fluences at ∼100 K. Following ion irradiation, transmission electron microscopy (TEM) and grazing incidence X-ray diffraction (GIXRD) were used to analyze the microstructure and crystal structure of the post-irradiated material. For ion doses equivalent to approximately 200 displacements per atom (dpa), ZrN was found to resist any amorphization transformation, based on TEM observations. At very high displacement damage doses, GIXRD measurements revealed tetragonal splitting of some of the diffraction maxima (maxima which are associated with cubic ZrN prior to irradiation). In addition to TEM and GIXRD, mechanical property changes were characterized using nano-indentation. Nano-indentation revealed no change in elastic modulus of ZrN with increasing ion dose, while the hardness of the irradiated ZrN was found to increase significantly with ion dose. Finally, He + ion implanted ZrN samples were annealed to examine He gas retention properties of ZrN as a function of annealing temperature. He gas release was measured using a residual gas analysis (RGA) spectrometer. RGA measurements were performed on He-implanted ZrN samples and on ZrN samples that had also been irradiated with Xe ++ ions, in order to introduce high levels of displacive radiation damage into the matrix. He evolution studies revealed that ZrN samples with high levels of displacement damage due to Xe implantation, show a lower temperature threshold for He release than do pristine ZrN samples. (authors)

  15. Ion irradiation of {sup 37}Cl implanted nuclear graphite: Effect of the energy deposition on the chlorine behavior and consequences for the mobility of {sup 36}Cl in irradiated graphite

    Toulhoat, N., E-mail: nelly.toulhoat@univ-lyon1.fr [Université de Lyon, Université Lyon 1, CNRS/IN2P3, UMR5822, Institut de Physique Nucléaire de Lyon (IPNL) (France); CEA/DEN, Centre de Saclay (France); Moncoffre, N. [Université de Lyon, Université Lyon 1, CNRS/IN2P3, UMR5822, Institut de Physique Nucléaire de Lyon (IPNL) (France); Bérerd, N.; Pipon, Y. [Université de Lyon, Université Lyon 1, CNRS/IN2P3, UMR5822, Institut de Physique Nucléaire de Lyon (IPNL) (France); Université de Lyon, Université Lyon, IUT Lyon-1 département chimie (France); Blondel, A. [Université de Lyon, Université Lyon 1, CNRS/IN2P3, UMR5822, Institut de Physique Nucléaire de Lyon (IPNL) (France); Andra, Châtenay-Malabry (France); Galy, N. [Université de Lyon, Université Lyon 1, CNRS/IN2P3, UMR5822, Institut de Physique Nucléaire de Lyon (IPNL) (France); Sainsot, P. [Université de Lyon, Université Lyon 1, LaMCoS, INSA-Lyon, CNRS UMR5259 (France); Rouzaud, J.-N.; Deldicque, D. [Laboratoire de Géologie de l’Ecole Normale Supérieure (ENS), Paris, UMR CNRS-ENS 8538 (France)

    2015-09-15

    Graphite is used in many types of nuclear reactors due to its ability to slow down fast neutrons without capturing them. Whatever the reactor design, the irradiated graphite waste management has to be faced sooner or later regarding the production of long lived or dose determining radioactive species such as {sup 14}C, {sup 3}H or {sup 36}Cl. The first carbon dioxide cooled, graphite moderated nuclear reactors resulted in a huge quantity of irradiated graphite waste for which the management needs a previous assessment of the radioactive inventory and the radionuclide’s location and speciation. As the detection limits of usual spectroscopic methods are generally not adequate to detect the low concentration levels (<1 ppm) of the radionuclides, we used an indirect approach based on the implantation of {sup 37}Cl, to simulate the presence of {sup 36}Cl. Our previous studies show that temperature is one of the main factors to be considered regarding the structural evolution of nuclear graphite and chlorine mobility during reactor operation. However, thermal release of chlorine cannot be solely responsible for the depletion of the {sup 36}Cl inventory. We propose in this paper to study the impact of irradiation and its synergetic effects with temperature on chlorine release. Indeed, the collision of the impinging neutrons with the graphite matrix carbon atoms induces mainly ballistic collisions. However, a small part of the recoil carbon atom energy is also transferred to the lattice through electronic excitation. This paper aims at elucidating the effects of the different irradiation regimes (ballistic and electronic) using ion irradiation, on the mobility of implanted {sup 37}Cl, taking into account the initial disorder level of the nuclear graphite.

  16. Tuning the antiferromagnetic to ferromagnetic phase transition in FeRh thin films by means of low-energy/low fluence ion irradiation

    Heidarian, A.; Bali, R.; Grenzer, J.; Wilhelm, R.A.; Heller, R.; Yildirim, O.; Lindner, J.; Potzger, K.

    2015-09-01

    Ion irradiation induced modifications of the thermomagnetic properties of equiatomic FeRh thin films have been investigated. The application of 20 keV Ne{sup +} ions at different fluencies leads to broadening of the antiferromagnetic to ferromagnetic phase transition as well as a shift of the transition temperature towards lower temperatures with increasing ion fluence. Moreover, the ferromagnetic background at low temperatures generated by the ion irradiation leads to pronounced saturation magnetisation at 5 K. Complete erasure of the transition, i.e. ferromagnetic ordering through the whole temperature regime was achieved at a Ne{sup +} fluence of 3 × 10{sup 14} ions/cm{sup 2}. It does not coincide with the complete randomization of the chemical ordering of the crystal lattice.

  17. Modification of WS2 nanosheets with controllable layers via oxygen ion irradiation

    Song, Honglian; Yu, Xiaofei; Chen, Ming; Qiao, Mei; Wang, Tiejun; Zhang, Jing; Liu, Yong; Liu, Peng; Wang, Xuelin

    2018-05-01

    As one kind of two-dimensional materials, WS2 nanosheets have drawn much attention with different kinds of research methods. Yet ion irradiation method was barely used for WS2 nanosheets. In this paper, the structure, composition and optical band gap (Eg) of the multilayer WS2 films deposited by chemical vapor deposition (CVD) method on sapphire substrates before and after oxygen ion irradiation with different energy and fluences were studied. Precise tailored layer-structures and a controllable optical band gap of WS2 nanosheets were achieved after oxygen ion irradiation. The results shows higher energy oxygen irradiation changed the shape from triangular shaped grains to irregular rectangle shape but did not change 2H-WS2 phase structure. The intensity of E2g1 (Г) and A1g (Г) modes decreased and have small shifts after oxygen ion irradiation. The peak frequency difference between the E2g1 (Г) and A1g (Г) modes (Δω) decreased after oxygen ion irradiation, and this result indicates the number of layers decreased after oxygen ion irradiation. The Eg decreased with the increase of the energy and the fluence of oxygen ions. The number of layers, thickness and optical band gap changed after ion irradiation with different ion fluences and energies. The results proposed a new strategy for precise control of multilayer nanosheets and demonstrated the high applicability of ion irradiation in super-capacitors, field effect transistors and other applications.

  18. Magnetic and topographical modifications of amorphous Co–Fe thin films induced by high energy Ag{sup 7+} ion irradiation

    Pookat, G.; Hysen, T. [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India); Al-Harthi, S.H.; Al-Omari, I.A. [Department of Physics, Sultan Qaboos University, Muscat, P.O. Box 36, Code 123 (Oman); Lisha, R. [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India); Avasthi, D.K. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Anantharaman, M.R., E-mail: mra@gmail.com [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India)

    2013-09-01

    We have investigated the effects of swift heavy ion irradiation on thermally evaporated 44 nm thick, amorphous Co{sub 77}Fe{sub 23} thin films on silicon substrates using 100 MeV Ag{sup 7+} ions fluences of 1 × 10{sup 11} ions/cm{sup 2}, 1 × 10{sup 12} ions/cm{sup 2}, 1 × 10{sup 13} ions/cm{sup 2}, and 3 × 10{sup 13} ions/cm{sup 2}. The structural modifications upon swift heavy irradiation were investigated using glancing angle X-ray diffraction. The surface morphological evolution of thin film with irradiation was studied using Atomic Force Microscopy. Power spectral density analysis was used to correlate the roughness variation with structural modifications investigated using X-ray diffraction. Magnetic measurements were carried out using vibrating sample magnetometry and the observed variation in coercivity of the irradiated films is explained on the basis of stress relaxation. Magnetic force microscopy images are subjected to analysis using the scanning probe image processor software. These results are in agreement with the results obtained using vibrating sample magnetometry. The magnetic and structural properties are correlated.

  19. Construction plan of ion irradiation facility in JAERI

    Tanaka, Ryuichi

    1987-01-01

    The Takasaki Radiation Chemistry Research Establishment of Japan Atomic Energy Research Institute (JAERI) started the construction of an ion irradiation facility to apply ion beam to the research and development of radiation resistant materials for severe environment, the research on biotechnology and new functional materials. This project was planned as ion beam irradiation becomes an effective means for the research on fundamental physics and advanced technology, and the national guideline recently emphasizes the basic and pioneering field in research and development. This facility comprises an AVF cyclotron with an ECR ion source (maximum proton energy: 90 MeV), a 3 MV tandem accelerator, a 3 MV single end type Van de Graaf accelerator and a 400 kV ion implanter. In this report, the present status of planning the accelerators and the facility to be constructed, the outline of research plan, the features of the accelerators, and the beam characteristics are described. In this project, the research items are divided into the materials for space environment, the materials for nuclear fusion reactors, biotechnology, new functional materials, and ion beam technology. The ion beams required for the facility are microbeam, pulsed beam, multiple beam, neutron beam and an expanded irradiation field. (Kako, I.)

  20. Ion irradiation studies of oxide ceramics

    Zinkle, S.J.

    1988-01-01

    This paper presents the initial results of an investigation of the depth-dependent microstructures of three oxide ceramics following ion implantation to moderate doses. The implantations were performed using ion species that occur as cations in the target material; for example, Mg + ions were used for MgO and MgAl 2 O 4 (spinel) irradiations. This minimized chemical effects associated with the implantation and allowed a more direct evaluation to be made of the effects of implanted ions on the microstructure. 11 refs., 14 figs

  1. Irradiation of graphene field effect transistors with highly charged ions

    Ernst, P.; Kozubek, R.; Madauß, L.; Sonntag, J.; Lorke, A.; Schleberger, M., E-mail: marika.schleberger@uni-due.de

    2016-09-01

    In this work, graphene field-effect transistors are used to detect defects due to irradiation with slow, highly charged ions. In order to avoid contamination effects, a dedicated ultra-high vacuum set up has been designed and installed for the in situ cleaning and electrical characterization of graphene field-effect transistors during irradiation. To investigate the electrical and structural modifications of irradiated graphene field-effect transistors, their transfer characteristics as well as the corresponding Raman spectra are analyzed as a function of ion fluence for two different charge states. The irradiation experiments show a decreasing mobility with increasing fluences. The mobility reduction scales with the potential energy of the ions. In comparison to Raman spectroscopy, the transport properties of graphene show an extremely high sensitivity with respect to ion irradiation: a significant drop of the mobility is observed already at fluences below 15 ions/μm{sup 2}, which is more than one order of magnitude lower than what is required for Raman spectroscopy.

  2. Effects of ion beam irradiation on semiconductor devices

    Nashiyama, Isamu; Hirao, Toshio; Itoh, Hisayoshi; Ohshima, Takeshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

    1997-03-01

    Energetic heavy-ion irradiation apparatus has been developed for single-event effects (SEE) testing. We have applied three irradiation methods such as a scattered-ion irradiation method, a recoiled-atom irradiation method, and a direct-beam irradiation method to perform SEE testing efficiently. (author)

  3. Tuning the electronic properties of LaAlO3/SrTiO3 interfaces by irradiating the LaAlO3 surface with low-energy cluster ion beams

    Ridier, Karl; Aureau, Damien; Bérini, Bruno; Dumont, Yves; Keller, Niels; Vigneron, Jackie; Etcheberry, Arnaud; Domengès, Bernadette; Fouchet, Arnaud

    2018-01-01

    We have investigated the effects of low-energy ion beam irradiations using argon clusters on the chemical and electronic properties of LaAlO3/SrTiO3 (LAO/STO) heterointerfaces by combining x-ray photoelectron spectroscopy (XPS) and electrical transport measurements. Due to its unique features, we demonstrate that a short-time cluster ion irradiation of the LAO surface induces significant modifications in the chemical properties of the buried STO substrate with (1) a lowering of Ti atoms oxidation states (from Ti4 + to Ti3 + and Ti2 +) correlated to the formation of oxygen vacancies at the LAO surface and (2) the creation of new surface states for Sr atoms. Contrary to what is generally observed by using higher energy ion beam techniques, this leads to an increase of the electrical conductivity at the LAO/STO interface. Our XPS data clearly reveal the existence of dynamical processes on the titanium and strontium atoms, which compete with the effect of the cluster ion beam irradiation. These relaxation effects are in part attributed to the diffusion of the ion-induced oxygen vacancies in the entire heterostructure since an increase of the interfacial metallicity is also evidenced far from the irradiated area. This paper highlights the possibility of tuning the electrical properties of LAO/STO interfaces by surface engineering, confirming experimentally the intimate connection between LAO chemistry and electronic properties of LAO/STO interfaces.

  4. Simulation of alpha decay of actinides in iron phosphate glasses by ion irradiation

    Dube, Charu L., E-mail: dubecharu@gmail.com; Stennett, Martin C.; Gandy, Amy S.; Hyatt, Neil C.

    2016-03-15

    Highlights: • Alpha decay of actinides in iron phosphate glasses is simulated by employing ion irradiation technique. • FTIR and Raman spectroscopic measurements confirm modification of glass network. • The depolymerisation of glass network after irradiation is attributed to synergetic effect of nuclear and electronic losses. - Abstract: A surrogate approach of ion beam irradiation is employed to simulate alpha decay of actinides in iron phosphate nuclear waste glasses. Bismuth and helium ions of different energies have been selected for simulating glass matrix modification owing to radiolysis and ballistic damage due to recoil atoms. Structural modification and change in coordination number of network former were probed by employing Reflectance Fourier-Transform Infrared (FT-IR), and Raman spectroscopies as a consequence of ion irradiation. Depolymerisation is observed in glass sample irradiated at intermediate energy of 2 MeV. Helium blisters of micron size are seen in glass sample irradiated at low helium ion energy of 30 keV.

  5. Cell survival in spheroids irradiated with heavy-ion beams

    Rodriguez, A.; Alpen, E.L.

    1981-01-01

    Biological investigations with accelerated heavy ions have been carried out regularly at the Lawrence Berkeley Laboratory Bevalac for the past four years. Most of the cellular investigations have been conducted on cell monolayer and suspension culture systems. The studies to date suggest that heavy charged particle beams may offer some radiotherapeutic advantages over conventional radiotherapy sources. The advantages are thought to lie primarily in an increased relative biological effectiveness (RBE), a decrease in the oxygen enhancement ratio (OER), and better tissue distribution dose. Experiments reported here were conducted with 400 MeV/amu carbon ions and 425 MeV/amu neon ions, using a rat brain gliosarcoma cell line grown as multicellular spheroids. Studies have been carried out with x-rays and high-energy carbon and neon ion beams. These studies evaluate high-LET (linear energy transfer) cell survival in terms of RBE and the possible contributions of intercellular communication. Comparisons were made of the post-irradiation survival characteristics for cells irradiated as multicellular spheroids (approximately 100 μm and 300 μm diameters) and for cells irradiated in suspension. These comparisons were made between 225-kVp x-rays, 400 MeV/amu carbon ions, and 425 MeV/amu neon ions

  6. Mutagenic effects of heavy ion irradiation on rice seeds

    Xu Xue; Liu Binmei; Zhang Lili; Wu Yuejin

    2012-01-01

    Three varieties of rice seeds were subjected to irradiation using low-energy and medium-energy ions. The damage and mutations induced by the ions were examined. In addition, genetic analysis and gene mapping of spotted leaf (spl) mutants were performed. Low-energy ions had no significant influence on germination, survival or seedling height, except for the survival of Nipponbare. Medium-energy ions had a significant influence on germination and survival but had no significant effect on seedling height. In the low-energy group, among 60,000 M 2 plants, 2823 putative morphological mutants were found, and the mutation frequency was approximately 4.71%. In the medium-energy group, 3132 putative morphological mutants were found, and the mutation frequency was approximately 5.22%. Five spl mutants (spl29–spl33) were obtained by ion irradiation, and the heredity of the spl mutants was stable. The characteristics of the spl mutants were found, by genetic analysis and preliminary mapping, to be controlled by a single recessive gene, and spl30 and spl33 were found to be new lesion-mimic mutants.

  7. Mutagenic effects of heavy ion irradiation on rice seeds

    Xu Xue [School of Agronomy, Anhui Agricultural University, 130 Changjiang West Road, Hefei 230036 (China); Key Laboratory of Ion Beam Bio-Engineering, Institute of Technical Biology and Agriculture Engineering, 350 Shushanhu Road, Hefei 230031 (China); Liu Binmei; Zhang Lili [Key Laboratory of Ion Beam Bio-Engineering, Institute of Technical Biology and Agriculture Engineering, 350 Shushanhu Road, Hefei 230031 (China); Wu Yuejin, E-mail: yjwu@ipp.ac.cn [Key Laboratory of Ion Beam Bio-Engineering, Institute of Technical Biology and Agriculture Engineering, 350 Shushanhu Road, Hefei 230031 (China)

    2012-11-01

    Three varieties of rice seeds were subjected to irradiation using low-energy and medium-energy ions. The damage and mutations induced by the ions were examined. In addition, genetic analysis and gene mapping of spotted leaf (spl) mutants were performed. Low-energy ions had no significant influence on germination, survival or seedling height, except for the survival of Nipponbare. Medium-energy ions had a significant influence on germination and survival but had no significant effect on seedling height. In the low-energy group, among 60,000 M{sub 2} plants, 2823 putative morphological mutants were found, and the mutation frequency was approximately 4.71%. In the medium-energy group, 3132 putative morphological mutants were found, and the mutation frequency was approximately 5.22%. Five spl mutants (spl29-spl33) were obtained by ion irradiation, and the heredity of the spl mutants was stable. The characteristics of the spl mutants were found, by genetic analysis and preliminary mapping, to be controlled by a single recessive gene, and spl30 and spl33 were found to be new lesion-mimic mutants.

  8. Comparison of deuterium retention for ion-irradiated and neutron-irradiated tungsten

    Oya, Yasuhisa; Kobayashi, Makoto; Okuno, Kenji; Shimada, Masashi; Calderoni, Pattrick; Oda, Takuji; Hara, Masanori; Hatano, Yuji; Watanabe, Hideo

    2014-01-01

    The behavior of D retentions for Fe 2+ irradiated tungsten with the damage of 0.025-3 dpa was compared with that for neutron irradiated tungsten with 0.025 dpa. The D 2 TDS spectra for Fe 2+ irradiated tungsten consisted of two desorption stages at 450 K and 550 K although that for neutron irradiated tungsten was composed of three stages and addition desorption stage was found around 750 K. The desorption rate of major desorption stage at 550 K increased as the number of dpa by Fe 2+ irradiation increased. In addition, the first desorption stage at 450 K was only found for the damaged samples, indicating that the second stage would be based on intrinsic defects or vacancy produced by Fe 2+ irradiation and the first stage should be the accumulation of D in mono vacancy leading to the lower activation energy, where the dislocation loop and vacancy was produced. The third one was only found for the neutron irradiation, showing the D trapping by void or vacancy cluster and the diffusion effect is also contributed due to high FWHM of TDS spectrum. It can be said that the D 2 TDS spectra for Fe 2+ -irradiated tungsten could not represent that for neutron-irradiated one, showing that the deuterium trapping and desorption mechanism for neutron-irradiated tungsten has a difference from that for ion-irradiated one. (author)

  9. Carbon ion irradiation induced surface modification of polypropylene

    Saha, A.; Chakraborty, V.; Dutta, R.K.; Chintalapudi, S.N.

    2001-01-01

    Polypropylene was irradiated with 12 C ions of 3.6 and 5.4 MeV energies in the fluence range of 5x10 13 -5x10 14 ions/cm 2 using 3 MV tandem accelerator. Ion penetration was limited to a few microns and surface modifications were investigated by scanning electron microscopy. At the lowest ion fluence only blister formation of various sizes (1-6 μm) were observed, but at higher fluence (1x10 14 ions/cm 2 ) a three-dimensional network structure was found to form. A gradual degradation in the network structure was observed with further increase in the ion fluence. The dose dependence of the changes on surface morphology of polypropylene is discussed

  10. Carbon ion irradiation induced surface modification of polypropylene

    Saha, A. E-mail: abhijit@alpha.iuc.res.in; Chakraborty, V.; Dutta, R.K.; Chintalapudi, S.N

    2001-12-01

    Polypropylene was irradiated with {sup 12}C ions of 3.6 and 5.4 MeV energies in the fluence range of 5x10{sup 13}-5x10{sup 14} ions/cm{sup 2} using 3 MV tandem accelerator. Ion penetration was limited to a few microns and surface modifications were investigated by scanning electron microscopy. At the lowest ion fluence only blister formation of various sizes (1-6 {mu}m) were observed, but at higher fluence (1x10{sup 14} ions/cm{sup 2}) a three-dimensional network structure was found to form. A gradual degradation in the network structure was observed with further increase in the ion fluence. The dose dependence of the changes on surface morphology of polypropylene is discussed.

  11. Ion irradiation enhanced crystal nucleation in amorphous Si thin films

    Im, J.S.; Atwater, H.A.

    1990-01-01

    The nucleation kinetics of the amorphous-to-crystal transition of Si films under 1.5 MeV Xe + irradiation have been investigated by means of in situ transmission electron microscopy in the temperature range T=500--580 degree C. After an incubation period during which negligible nucleation occurs, a constant nucleation rate was observed in steady state, suggesting that homogeneous nucleation occurred. Compared to thermal crystallization, a significant enhancement in the nucleation rate during high-energy ion irradiation (five to seven orders of magnitude) was observed with an apparent activation energy of 3.9±0.75 eV

  12. Ion-irradiated polymer studied by a slow positron beam

    Kobayashi, Yoshinori; Kojima, Isao; Hishita, Shunichi; Suzuki, Takenori.

    1995-01-01

    Poly (aryl-ether-ether ketone) (PEEK) films were irradiated with 1MeV and 2MeV 0 + ions and the positron annihilation Doppler broadening was measured as a function of the positron energy. The annihilation lines recorded at relatively low positron energies were found to become broader with increasing the irradiation dose, suggesting that positronium (Ps) formation may be inhibited in the damaged regions. A correlation was observed between the Doppler broadening and spin densities determined by electron spin resonance (ESR). (author)

  13. Damage induced in semiconductors by swift heavy ion irradiation

    Levalois, M.; Marie, P.

    1999-01-01

    The behaviour of semiconductors under swift heavy ion irradiation is different from that of metals or insulators: no spectacular effect induced by the inelastic energy loss has been reported in these materials. We present here a review of irradiation effects in the usual semiconductors (silicon, germanium and gallium arsenide). The damage is investigated by means of electrical measurements. The usual mechanisms of point defect creation can account for the experimental results. Besides, some results obtained on the wide gap semiconductor silicon carbide are reported. Concerning the irradiation effects induced by heavy ions in particle detectors, based on silicon substrate, we show that the deterioration of the detector performances can be explained from the knowledge of the substrate properties which are strongly perturbed after high doses of irradiation. Finally, some future ways of investigation are proposed. The silicon substrate is a good example to compare the irradiation effects with different particles such as electrons, neutrons and heavy ions. It is then necessary to use parameters which account for the local energy deposition, in order to describe the damage in the material

  14. Bleaching threshold of cationic radicals of alkanes and capture energy of the positive hole of these ions in irradiated solid matrix

    Van den Bosch, A.; Strobbe, M.; Ceulemans, J.

    1984-01-01

    Gamma irradiated Cl 3 CCF 3 shows an absorption band at about 360 nm, and another band, at 600 nm. The band at 600 nm disappears completely by irradiation with light of lambda>610 nm. Cl 3 CCF 3 containing 1% of decane irradiated at 77 K presents the some phenomena. Selective bleaching by photons of increasing energy allows the determination of the threshold for bleaching of cationic radicals of decane trapped in Cl 3 CCF 3 . Distinction between photoinduced charge transfer and photodissociation is obtained by addition of tetramethyl-p-phenylenediame. Showing that bleaching threshold corresponds to the capture energy of the positive hole on decane cationic radical [fr

  15. AFM studies on heavy ion irradiated YBCO single crystals

    Lakhani, Archana; Marhas, M.K.; Saravanan, P.; Ganesan, V.; Srinivasan, R.; Kanjilal, D.; Mehta, G.K.; Elizabeth, Suja; Bhat, H.L.

    2000-01-01

    Atomic Force Microscopy (AFM) is extensively used to characterise the surface morphology of high energy ion irradiated single crystals of high temperature superconductor - YBCO. Our earlier systematic studies on thin films of YBCO under high energy and heavy ion irradiation shows clear evidence of ion induced sputtering or erosion, even though the effect is more on the grain boundaries. These earlier results were supported by electrical resistance measurements. In order to understand more clearly, the nature of surface modification at these high energies, AFM studies were carried out on single crystals of YBCO. Single crystals were chosen in order to see the effect on crystallites alone without interference from grain boundaries. 200 MeV gold ions were used for investigation using the facilities available at Nuclear Science Centre, New Delhi. The type of ion and the range of energies were chosen to meet the threshold for electronically mediated defect production. The results are in conformity with our earlier studies and will be described in detail in the context of electronic energy loss mediated sputtering or erosion. (author)

  16. Nitridation of vanadium by ion beam irradiation

    Kiuchi, Masato; Chayahara, Akiyoshi; Kinomura, Atsushi; Ensinger, Wolfgang

    1994-01-01

    The nitridation of vanadium by ion beam irradiation is studied by the ion implantation method and the dynamic mixing method. The nitrogen ion implantation was carried out into deposited V(110) films. Using both methods, three phases are formed, i.e. α-V, β-V 2 N, and δ-VN. Which phases are formed is related to the implantation dose or the arrival ratio. The orientation of the VN films produced by the dynamic ion beam mixing method is (100) and that of the VN films produced by the ion implantation method is (111). The nitridation of vanadium is also discussed in comparison with that of titanium and chromium. ((orig.))

  17. Genetic effects of heavy ion irradiation in maize and soybean

    Yatou, Osamu; Amano, Etsuo; Takahashi, Tan.

    1992-01-01

    Somatic mutation on leaves of maize and soybean were observed to investigate genetic effects of heavy ion irradiation. Maize seeds were irradiated with N, Fe and U ions and soybean seeds were irradiated with N ions. This is a preliminary report of the experiment, 1) to examine the mutagenic effects of the heavy ion irradiation, and 2) to evaluate the genetic effects of cosmic ray exposure in a space ship outside the earth. (author)

  18. Effect of heavy ion irradiation on sucrose radical production

    Nakagawa, Kouichi; Sato, Yukio

    2004-01-01

    We investigated sucrose radicals produced by heavy-ion irradiation with various LETs (linear energy transfer) and the possibility for a sucrose ESR (electron spin resonance) dosimeter. The obtained spectral pattern was the same as that for helium (He) ions, carbon (C) ions, neon (Ne) ions, argon (Ar) ions, and iron (Fe) ions. Identical spectra were measured after one year, but the initial intensities decreased by a few percent when the samples were kept in ESR tubes with the caps at ambient temperature. The total spin concentration obtained by heavy-ion irradiation had a linear relation with the absorbed dose, and correlated logarithmically with the LET. Qualitative ESR analyses showed that the production of sucrose radicals depended on both the particle identity and the LET at the same dose. The production of spin concentration by He ions was the most sensitive to LET. Empirical relations between the LET and the spin yield for various particles imply that the LET at a certain dose can be estimated by the spin concentration. (authors)

  19. Temperature Dependent Surface Modification of Tungsten Exposed to High-Flux Low-Energy Helium Ion Irradiation

    Damico, Antony Q; Tripathi, Jitendra K; Novakowski, Theodore J; Miloshevsky, Gennady; Hassanein, Ahmed

    2016-01-01

    Nuclear fusion is a great potential energy source that can provide a relatively safe and clean limitless supply of energy using hydrogen isotopes as fuel material. ITER (international thermonuclear experimental reactor) is the world first fusion reactor currently being built in France. Tungsten (W) is a prime candidate material as plasma facing component (PFC) due to its excellent mechanical properties, high melting point, and low erosion rate. However, W undergoes a severe surface morphology...

  20. High energy ion irradiated III-N semiconductors (AlN, GaN, InN): study of point defect and extended defect creation

    Sall, Mamour

    2013-01-01

    Nitride semiconductors III N (AlN, GaN, InN) have interesting properties for micro-and opto-electronic applications. In use, they may be subjected to different types of radiation in a wide range of energy. In AlN, initially considered insensitive to electronic excitations (Se), we have demonstrated a novel type of synergy between Se and nuclear collisions (Sn) for the creation of defects absorbing at 4.7 eV. In addition, another effect of Se is highlighted in AlN: climb of screw dislocations under the influence of Se, at high fluence. In GaN, two mechanisms can explain the creation of defects absorbing at 2.8 eV: a synergy between Se and Sn, or a creation only due to Sn but with a strong effect of the size of displacement cascades. The study, by TEM, of the effects of Se in the three materials, exhibits behaviors highly dependent on the material while they all belong to the same family with the same atomic structure. Under monoatomic ion irradiations (velocity between 0.4 and 5 MeV/u), while discontinuous tracks are observed in GaN and InN, no track is observed in AlN with the highest electronic stopping power (33 keV/nm). Only fullerene clusters produce tracks in AlN. The inelastic thermal spike model was used to calculate the energies required to produce track in AlN, GaN and InN, they are 4.2 eV/atom, 1.5 eV/atom and 0.8 eV/atom, respectively. This sensitivity difference according to Se, also occurs at high fluence. (author)

  1. Anisotropic dewetting of ion irradiated solid films

    Repetto, L., E-mail: luca.repetto@unige.it [Dipartimento di fisica, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy); Šetina Batič, B. [Inštitut Za Kovinske Materiale in Tehnologije, Lepi pot 11, 1000 Ljubljana (Slovenia); Firpo, G.; Piano, E.; Valbusa, U. [Dipartimento di fisica, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy)

    2013-11-15

    Experiments of irradiation with 30 keV Ga ions were conducted on ultrathin chromium films on rippled silicon substrates. The evolution of their surface morphology, as detected by real time scanning electron microscopy, shows an apparent differential sputtering yield for regions of positive and negative curvature which is in contrast with the standard theory for curvature depending sputtering yield. In particular, at the end of the irradiation process, chromium wires are left in the valleys of the substrate. This result was explained in terms of local melting caused by the ion impact and of a process of dewetting under the concurring actions of surface tension and Van der Waals forces while ion sputtering is active. The interpretation of the reported experimental results are fully supported by numeric simulations implementing the same continuum model used to explain ion induced spinodal dewetting. This hierarchical self-organization process breaks the symmetry of previously demonstrated ion induced dewetting, making possible to create new structures by using the same fundamental effects.

  2. Effect of irradiation spectrum on the microstructure of ion-irradiated Al2O3

    Zinkle, S.J.

    1994-01-01

    Polycrystalline samples of alpha-alumina have been irradiated with various ions ranging from 3.6 MeV Fe + to 1 MeV H + ions at 650 C. Cross-section transmission electron microscopy was used to investigate the depth-dependent microstructure of the irradiated specimens. The microstructure following irradiation was observed to be dependent on the irradiation spectrum. In particular, defect cluster nucleation was effectively suppressed in specimens irradiated with light ions such as 1 MeV H + ions. On the other hand, light ion irradiation tended to accelerate the growth rate of dislocation loops. The microstructural observations are discussed in terms of ionization enhanced diffusion processes

  3. Mutation induced with ion beam irradiation in rose

    Yamaguchi, H. E-mail: yhiroya@nias.affrc.go.jp; Nagatomi, S.; Morishita, T.; Degi, K.; Tanaka, A.; Shikazono, N.; Hase, Y

    2003-05-01

    The effects of mutation induction by ion beam irradiation on axillary buds in rose were investigated. Axillary buds were irradiated with carbon and helium ion beams, and the solid mutants emerged after irradiation by repeated cutting back. In helium ion irradiation, mutations were observed in plants derived from 9 buds among 56 irradiated buds in 'Orange Rosamini' and in plants derived from 10 buds among 61 irradiated buds in 'Red Minimo'. In carbon ion, mutations were observed in plants derived from 12 buds among 88 irradiated buds in 'Orange Rosamini'. Mutations were induced not only in higher doses but also in lower doses, with which physiological effect by irradiation was hardly observed. Irradiation with both ion beams induced mutants in the number of petals, in flower size, in flower shape and in flower color in each cultivar.

  4. Modification of embedded Cu nanoparticles: Ion irradiation at room temperature

    Johannessen, B.; Kluth, P.; Giulian, R.; Araujo, L.L.; Llewellyn, D.J.; Foran, G.J.; Cookson, D.J.; Ridgway, M.C.

    2007-01-01

    Cu nanoparticles (NPs) with an average diameter of ∼25 A were synthesized in SiO 2 by ion implantation and thermal annealing. Subsequently, the NPs were exposed to ion irradiation at room temperature simultaneously with a bulk Cu reference film. The ion species/energy was varied to achieve different values for the nuclear energy loss. The short-range atomic structure and average NP diameter were measured by means of extended X-ray absorption fine structure spectroscopy and small angle X-ray scattering, respectively. Transmission electron microscopy yielded complementary results. The short-range order of the Cu films remained unchanged consistent with the high regeneration rate of bulk elemental metals. For the NP samples it was found that increasing nuclear energy loss yielded gradual dissolution of NPs. Furthermore, an increased structural disorder was observed for the residual NPs

  5. The Influence of Deformation on the Surface Structure of Silicon Under Irradiation by $^{86}$Kr Ions with Energy 253 MeV

    Vlasukova, L A; Hofmann, A; Komarov, F F; Semina, V K; Yuvchenko, V N

    2006-01-01

    The influence of the previously produced deformation in silicon structure by means of macro-scratch surface covering on the sputtering processes under following irradiation by swift $^{86}$Kr ions is studied. The significant leveling of surface relief of irradiated silicon was observed using atomic force microscopy method (AFM), in particular it takes place for smoothing of micro-scratches produced by mechanical polishing of silicon initial plates. The experimental studies of irradiated surface allowed one to conclude that it is impossible to explain the surface changes only by elastic cascade mechanism as it was calculated using the computer code TRIM-98, because the calculated sputtered layers of silicon at ion fluence $\\Phi_{\\rm Kr} = 1{.}3\\cdot10^{14}$ ion/cm$^{2}$ should be $\\Delta H_{\\rm Sputtering}^{\\rm Kr} = 5{.}5\\cdot10^{-3 }${\\AA}. Correspondingly, the surface changes should be explained by one of mechanisms of inelastic sputtering. The macro-cracks on the surface were observed near the scratches. I...

  6. High energy ion implantation

    Ziegler, J.F.

    1985-01-01

    High energy ion implantation offers the oppertunity for unique structures in semiconductor processing. The unusual physical properties of such implantations are discussed as well as the special problems in masking and damage annealing. A review is made of proposed circuit structures which involve deep implantation. Examples are: deep buried bipolar collectors fabricated without epitaxy, barrier layers to reduce FET memory sensitivity to soft-fails, CMOS isolation well structures, MeV implantation for customization and correction of completed circuits, and graded reach-throughs to deep active device components. (orig.)

  7. Nanoscale Morphology Evolution Under Ion Irradiation

    Aziz, Michael J. [President & Fellows of Harvard College, Cambridge, MA (United States)

    2014-11-10

    We showed that the half-century-old paradigm of morphological instability under irradiation due to the curvature-dependence of the sputter yield, can account neither for the phase diagram nor the amplification or decay rates that we measure in the simplest possible experimental system -- an elemental semiconductor with an amorphous surface under noble-gas ion irradiation; We showed that a model of pattern formation based on the impact-induced redistribution of atoms that do not get sputtered away explains our experimental observations; We developed a first-principles, parameter-free approach for predicting morphology evolution, starting with molecular dynamics simulations of single ion impacts, lasting picoseconds, and upscaling through a rigorous crater-function formalism to develop a partial differential equation that predicts morphology evolution on time scales more than twelve orders of magnitude longer than can be covered by the molecular dynamics; We performed the first quantitative comparison of the contributions to morphological instability from sputter removal and from impact-induced redistribution of atoms that are removed, and showed that the former is negligible compared to the latter; We established a new paradigm for impact-induced morphology evolution based on crater functions that incorporate both redistribution and sputter effects; and We developed a model of nanopore closure by irradiation-induced stress and irradiationenhanced fluidity, for the near-surface irradiation regime in which nuclear stopping predominates, and showed that it explains many aspects of pore closure kinetics that we measure experimentally.

  8. Moessbauer study of defects in molybdenum and chromium irradiated with ions

    Troyan, V.A.; Bogdanov, V.V.; Ivanyushkin, E.M.; Pen'kov, Yu.P.

    1980-01-01

    Effects of ion irradiation of monocrystalline molybdenum and polycrystalline chromium with Co-57 impurity were studied by Moessbauer effect. Molybdenum specimens were irradiated by He + ions at accelerators with 40 keV energy. Chromium specimens were irradiated by hydrogen ions with 1.2 MeV energy up to integral 2x10 17 -2x10 19 ion/cm 2 doses. It is shown, that defect introduction into the source matrix by irradiation results in change of gamma-resonance line form and effect value. The observed effects of defect influence on spectrum parameters are discussed. It is concluded, that study of Moessbauer spectra parameters of diluted Co-57 solutions in matrices of different metals permits to determine dynamics of movement of impurity atoms and defects in metals irradiated with ions [ru

  9. Sputtering characteristics of B4C-overlaid graphite for keV energy deuterium ion irradiation

    Gotoh, Y.; Yamaki, T.; Ando, T.; Jimbou, R.; Ogiwara, N.; Saidoh, M.; Teruyama, K.

    1992-01-01

    Two types of B 4 C-overlaid graphite (CFC), conversion and CVD B 4 C, together with bare CFC (PCC-2S) and/or HP B 4 C, were investigated with respect to erosion yields for 1 keV D + , D 2 /CD 4 TDS after 1 keV D + implantation, and thermal diffusivity/conductivity, in a temperature range from 300 to 1400 K. The erosion yields of both conversion and CVD B 4 C were found to be much lower than that of the bare CFC (PCC-2S), in both chemical sputtering (600-1100 K) and RES (1200-1400 K) temperature regions. The D 2 TDS peak of the conversion B 4 C was found to be located at nearly 200 K lower temperature than that of the bare CFC (PCC-2S), indicating much lower activation energy for detrapping/recombination of trapped D in the conversion B 4 C and in the CFC. The CD 4 TDS peak of the conversion B 4 C was found to be much weaker in intensity than that of the bare CFC (PCC-2S), in agreement with the present erosion yield results. Thermal diffusivities and conductivities of both the conversion B 4 C/PCC-2S and the CVD B 4 C, were measured to be nearly 1/10 of that of the bare CFC (PCC-2S), and to decrease with increasing temperatures. (orig.)

  10. Deuterium ion irradiation induced blister formation and destruction

    Song, Jaemin; Kim, Nam-Kyun; Kim, Hyun-Su; Jin, Younggil; Roh, Ki-Baek; Kim, Gon-Ho, E-mail: ghkim@snu.ac.kr

    2016-11-01

    Highlights: • The areal number density of blisters on the grain with (1 1 1) plane orientation increased with increasing ion fluence. • No more blisters were created above the temperature about 900 K due to high thermal mobility of ions and inactivity of traps. • The destruction of blister at the boundary induced by sputtering is proposed. • The blisters were destructed at the position about the boundary by high sputtering yield of oblique incident ions and thin thickness due to plastic deformation at the boundary. - Abstract: The blisters formation and destruction induced by the deuterium ions on a polycrystalline tungsten were investigated with varying irradiation deuterium ion fluence from 3.04 × 10{sup 23} to 1.84 × 10{sup 25} D m{sup −2} s{sup −1} and an fixed irradiated ion energy of 100 eV in an electron cyclotron resonance plasma source, which was similar to the far-scrape off layer region in the nuclear fusion reactors. Target temperature was monitored during the irradiation. Most of blisters formed easily on the grain with (1 1 1) plane orientation which had about 250 nm in diameter. In addition, the areal number density of blisters increased with increasing the ion fluence under the surface temperature reaching to about 900 K. When the fluence exceeded 4.6 × 10{sup 24} D m{sup −2}, the areal number density of the blister decreased. It could be explained that the destruction of the blister was initiated by erosion at the boundary region where the thickness of blister lid was thin and the sputtering yield was high by oblique incident ions, resulting in remaining the lid open, e.g., un-eroded center dome. It is possible to work as a tungsten dust formation from the plasma facing divertor material at far-SOL region of fusion reactor.

  11. Surface nanostructuring of TiO2 thin films by ion beam irradiation

    Romero-Gomez, P.; Palmero, A.; Yubero, F.; Vinnichenko, M.; Kolitsch, A.; Gonzalez-Elipe, A.R.

    2009-01-01

    This work reports a procedure to modify the surface nanostructure of TiO 2 anatase thin films through ion beam irradiation with energies in the keV range. Irradiation with N + ions leads to the formation of a layer with voids at a depth similar to the ion-projected range. By setting the ion-projected range a few tens of nanometers below the surface of the film, well-ordered nanorods appear aligned with the angle of incidence of the ion beam. Slightly different results were obtained by using heavier (S + ) and lighter (B + ) ions under similar conditions

  12. Dose Response of Alanine Detectors Irradiated with Carbon Ion Beams

    Herrmann, Rochus; Jäkel, Oliver; Palmans, Hugo

    2011-01-01

    Purpose: The dose response of the alanine detector shows a dependence on particle energy and type, when irradiated with ion beams. The purpose of this study is to investigate the response behaviour of the alanine detector in clinical carbon ion beams and compare the results with model predictions......-dose curves deviate from predictions in the peak region, most pronounced at the distal edge of the peak. Conclusions: The used model and its implementation show a good overall agreement for quasi mono energetic measurements. Deviations in depth-dose measurements are mainly attributed to uncertainties...

  13. Morphology variation, composition alteration and microstructure changes in ion-irradiated 1060 aluminum alloy

    Wan, Hao; Si, Naichao; Wang, Quan; Zhao, Zhenjiang

    2018-02-01

    Morphology variation, composition alteration and microstructure changes in 1060 aluminum irradiated with 50 keV helium ions were characterized by field emission scanning electron microscopy (FESEM) equipped with x-ray elemental scanning, 3D measuring laser microscope and transmission electron microscope (TEM). The results show that, helium ions irradiation induced surface damage and Si-rich aggregates in the surfaces of irradiated samples. Increasing the dose of irradiation, more damages and Si-rich aggregates would be produced. Besides, defects such as dislocations, dislocation loops and dislocation walls were the primary defects in the ion implanted layer. The forming of surface damages were related with preferentially sputtering of Al component. While irradiation-enhanced diffusion and irradiation-induced segregation resulted in the aggregation of impurity atoms. And the aggregation ability of impurity atoms were discussed based on the atomic radius, displacement energy, lattice binding energy and surface binding energy.

  14. Enhancement of CNT-based filters efficiency by ion beam irradiation

    Elsehly, Emad M.; Chechenin, N. G.; Makunin, A. V.; Shemukhin, A. A.; Motaweh, H. A.

    2018-05-01

    It is shown in the report that disorder produced by ion beam irradiation can enhance the functionality of the carbon nanotubes. The filters of pressed multiwalled carbon nanotubes (MWNTs) were irradiated by He+ ions of the energy E = 80 keV with the fluence 2 × 1016 ion/cm2. The removal of manganese from aqueous solutions by using pristine and ion beam irradiated MWNTs filters was studied as a function of pH, initial concentration of manganese in aqueous solution, MWNT mass and contact time. The filters before and after filtration were characterized by Raman (RS) and energy dispersive X-ray spectroscopy (EDS) techniques to investigate the deposition content in the filter and defect formation in the MWNTs. The irradiated samples showed an enhancement of removal efficiency of manganese up to 97.5% for 10 ppm Mn concentration, suggesting that irradiated MWNT filter is a better Mn adsorbent from aqueous solutions than the pristine one. Radiation-induced chemical functionalization of MWNTs due to ion beam irradiation, suggesting that complexation between the irradiated MWNTs and manganese ions is another mechanism. This conclusion is supported by EDS and RS and is correlated with a larger disorder in the irradiated samples as follows from RS. The study demonstrates that ion beam irradiation is a promising tool to enhance the filtration efficiency of MWNT filters.

  15. Microstructural and microchemical evolution in vanadium alloys by heavy ion irradiation

    Sekimura, Naoto; Kakiuchi, Hironori; Shirao, Yasuyuki; Iwai, Takeo [Tokyo Univ. (Japan)

    1996-10-01

    Microstructural and microchemical evolution in vanadium alloys were investigated using heavy ion irradiation. No cavities were observed in V-5Cr-5Ti alloys irradiated to 30 dpa at 520 and 600degC. Energy dispersive X-ray spectroscopy analyses showed that Ti peaks around grain boundaries. Segregation of Cr atoms was not clearly detected. Co-implanted helium was also found to enhance dislocation evolution in V-5Cr-5Ti. High density of matrix cavities were observed in V-5Fe alloys irradiated with dual ions, whereas cavities were formed only around grain boundaries in single ion irradiated V-5Fe. (author)

  16. Positron lifetime and Doppler broadening study of defects created by swift ion irradiation in sapphire

    Liszkay, L.; Gordo, P.M.; Lima, A. de; Havancsak, K.; Skuratov, V.A.; Kajcsos, Z.

    2004-01-01

    Swift ions create a defect profile penetrating deep into a solid compared to the sampling range of typical slow positron beams, which may consequently study a homogeneous zone of defected materials. To investigate the defect population created by energetic ions, we studied α-Al 2 O 3 single crystals irradiated with swift Kr ions by using conventional and pulsed positron beams. Samples irradiated with krypton at 245 MeV energy in a wide fluence range show nearly saturated positron trapping above 5 x 10 10 ions cm -2 fluence, indicating the creation of monovacancies in high concentration. At 1 x 10 14 ions cm -2 irradiation a 500 ps long lifetime component appears, showing the creation of larger voids. This threshold corresponds well to the onset of the overlap of the damage zones after Bi ion irradiation along the ion trajectories observed with microscopic methods. (orig.)

  17. Influence of ion irradiation induced defects on mechanical properties of copper nanowires

    Li, Weina; Sun, Lixin; Xue, Jianming; Wang, Jianxiang; Duan, Huiling

    2013-01-01

    The mechanical properties of copper nanowires irradiated with energetic ions have been investigated by using molecular dynamics simulations. The Cu ions with energies ranging from 0.2 to 8.0 keV are used in our simulation, and both the elastic properties and yields under tension and compression are analyzed. The results show that two kinds of defects, namely point defects and stacking faults, appear in the irradiated nanowires depending on the incident ion energy. The Young modulus is significantly reduced by the ion irradiation, and the reduction magnitude depends on the vacancy number, which is determined by the ion energy. Moreover, the irradiated nanowires yield at a smaller strain, compared with the unirradiated nanowire. The mechanism for these changes are also discussed

  18. Development of heavy-ion irradiation technique for single-event in semiconductor devices

    Nemoto, Norio; Akutsu, Takao; Matsuda, Sumio [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan). Tsukuba Space Center; Naitoh, Ichiro; Itoh, Hisayoshi; Agematsu, Takashi; Kamiya, Tomihiro; Nashiyama, Isamu

    1997-03-01

    Heavy-ion irradiation technique has been developed for the evaluation of single-event effects on semiconductor devices. For the uniform irradiation of high energy heavy ions to device samples, we have designed and installed a magnetic beam-scanning system in a JAERI cyclotron beam course. It was found that scanned area was approximately 4 x 2 centimeters and that the deviation of ion fluence from the average value was less than 7%. (author)

  19. High Fidelity Ion Beam Simulation of High Dose Neutron Irradiation

    Was, Gary; Wirth, Brian; Motta, Athur; Morgan, Dane; Kaoumi, Djamel; Hosemann, Peter; Odette, Robert

    2018-04-30

    Project Objective: The objective of this proposal is to demonstrate the capability to predict the evolution of microstructure and properties of structural materials in-reactor and at high doses, using ion irradiation as a surrogate for reactor irradiations. “Properties” includes both physical properties (irradiated microstructure) and the mechanical properties of the material. Demonstration of the capability to predict properties has two components. One is ion irradiation of a set of alloys to yield an irradiated microstructure and corresponding mechanical behavior that are substantially the same as results from neutron exposure in the appropriate reactor environment. Second is the capability to predict the irradiated microstructure and corresponding mechanical behavior on the basis of improved models, validated against both ion and reactor irradiations and verified against ion irradiations. Taken together, achievement of these objectives will yield an enhanced capability for simulating the behavior of materials in reactor irradiations

  20. In-situ observation system for dual ion irradiation damage

    Furuno, Shigemi; Hojou, Kiichi; Otsu, Hitoshi; Sasaki, T.A.; Izui, Kazuhiko; Tukamoto, Tetsuo; Hata, Takao.

    1992-01-01

    We have developed an in-situ observation and analysis system during dual ion beam irradiation in an electron microscope. This system consists of an analytical electron microscope of JEM-4000FX type equipped with a parallel EELS and an EDS attachments and linked with two sets of ion accelerators of 40 kV. Hydrogen and helium dual-ion beam irradiation experiments were performed for SiC crystals. The result of dual-ion beam irradiation was compared with those of helium and hydrogen single ion irradiations. It is clearly seen that the dual-ion irradiation has the effect of suppressing bubble formation and growth in comparison with the case of single helium ion irradiation. (author)

  1. Ion irradiated graphite exposed to fusion-relevant deuterium plasma

    Deslandes, Alec; Guenette, Mathew C.; Corr, Cormac S.; Karatchevtseva, Inna; Thomsen, Lars; Ionescu, Mihail; Lumpkin, Gregory R.; Riley, Daniel P.

    2014-01-01

    Graphite samples were irradiated with 5 MeV carbon ions to simulate the damage caused by collision cascades from neutron irradiation in a fusion environment. The ion irradiated graphite samples were then exposed to a deuterium plasma in the linear plasma device, MAGPIE, for a total ion fluence of ∼1 × 10 24 ions m −2 . Raman and near edge X-ray absorption fine structure (NEXAFS) spectroscopy were used to characterize modifications to the graphitic structure. Ion irradiation was observed to decrease the graphitic content and induce disorder in the graphite. Subsequent plasma exposure decreased the graphitic content further. Structural and surface chemistry changes were observed to be greatest for the sample irradiated with the greatest fluence of MeV ions. D retention was measured using elastic recoil detection analysis and showed that ion irradiation increased the amount of retained deuterium in graphite by a factor of four

  2. Reflection properties of hydrogen ions at helium irradiated tungsten surfaces

    Doi, K; Tawada, Y; Kato, S; Sasao, M; Kenmotsu, T; Wada, M; Lee, H T; Ueda, Y; Tanaka, N; Kisaki, M; Nishiura, M; Matsumoto, Y; Yamaoka, H

    2016-01-01

    Nanostructured W surfaces prepared by He bombardment exhibit characteristic angular distributions of hydrogen ion reflection upon injection of 1 keV H + beam. A magnetic momentum analyzer that can move in the vacuum chamber has measured the angular dependence of the intensity and the energy of reflected ions. Broader angular distributions were observed for He-irradiated tungsten samples compared with that of the intrinsic polycrystalline W. Both intensity and energy of reflected ions decreased in the following order: the polycrystalline W, the He-bubble containing W, and the fuzz W. Classical trajectory Monte Carlo simulations based on Atomic Collision in Amorphous Target code suggests that lower atom density near the surface can make the reflection coefficients lower due to increasing number of collisions. (paper)

  3. Heavy Ion Testing at the Galactic Cosmic Ray Energy Peak

    Pellish, Jonathan A.; Xapsos, M. A.; LaBel, K. A.; Marshall, P. W.; Heidel, D. F.; Rodbell, K. P.; Hakey, M. C.; Dodd, P. E.; Shaneyfelt, M. R.; Schwank, J. R.; hide

    2009-01-01

    A 1 GeV/u Fe-56 Ion beam allows for true 90 deg. tilt irradiations of various microelectronic components and reveals relevant upset trends for an abundant element at the galactic cosmic ray (GCR) flux-energy peak.

  4. Ion irradiation effects on tensile properties of carbon fibres

    Kurumada, A.; Ishihara, M.; Baba, S.; Aihara, J.

    2004-01-01

    Carbon/carbon composite materials have high thermal conductivity and excellent mechanical properties at high temperatures. They have been used as structural materials at high temperatures in fission and experimental fusion reactors. The changes in the microstructures and the mechanical properties due to irradiation damage must be measured for the safety design and the life assessment of the materials. The purpose of this study is to obtain a basic knowledge of the development of new carbon composite materials having high thermal conductivity and excellent resistance to irradiation damage. Five kinds of carbon fibres were selected, including a vapour growth carbon fibre (VGCF; K1100X), a polyacrylonitrile-based fibre (PAN; M55JB by Toray Corp.), two meso-phase pitch-based fibres (YS-15-60S and YS-70-60S by Nippon Graphite Fiber Corp.) and a pitch-based fibre (K13C2U by Mitsubishi Chemical Co.). They were irradiated by high-energy carbon, nickel and argon ions. Irradiation damages in the carbon fibres are expected to be uniform across the cross-section, as the diameters of the carbon fibres are about 20 μm and are sufficiently smaller than the ranges of ions. The cross-sectional areas increased due to ion irradiation, with the exception of the K1100X of VGCF. One of the reasons for the increases is the swelling of carbon basal planes due to lattice defects in the graphite interlayer. The tensile strengths and the Young's moduli decreased due to ion irradiation except for the K1100X of VGCF and the YS-15-60S of meso-phase pitch-based fibres. One of the reasons for the decreases is thought to be that the microstructures of carbon fibres are damaged in the axial direction, as ions were irradiated vertically with respect to the longitudinal direction of carbon fibres. The results of this study indicate that the VGCF and the meso-phase pitch-based carbon fibres could be useful as reinforcement fibres of new carbon composite materials having high thermal conductivity and

  5. Saturation of plastic deformation by swift heavy ion irradiation: Ion hammering vs. surface effects

    Ferhati, Redi; Dautel, Knut; Bolse, Wolfgang [Institut fuer Halbleiteroptik und Funktionelle Grenzflaechen, Universitaet Stuttgart (Germany); Fritzsche, Monika [Helmholtz-Zentrum Dresden-Rossendorf (Germany)

    2012-07-01

    Swift heavy ion (SHI) induced plastic deformation is a subject of current research and scientific discussion. This *Ion Hammering* phenomenon was first observed 30 years ago in amorphous materials like metallic glasses. About 10 years ago, Feyh et al. have shown that stress generation and *Ion Hammering* result in self-organization of thin NiO-films on Si-wafers into a sub-micron lamellae-like structure under grazing angle irradiation. The growth of the lamellae was found to saturate as soon as they have reached a thickness of a few hundreds of nm. Here we show our latest results on the restructuring of pre-patterned thin oxide films by SHI under various irradiation conditions. The experiments were performed by employing (in-situ) scanning electron microscopy, and were complemented by (in-situ) energy dispersive x-ray analysis and atomic force microscopy. As we will show, the saturation behavior can be understood as a competition of *Ion Hammering* and surface energy effects, while the unexpected fact, that the initially crystalline films undergo *Ion Hammering* can possibly be attributed to oxygen loss and thus amorphization during irradiation.

  6. Degradation of polyimide under irradiation with swift heavy ions

    Severin, D.; Ensinger, W.; Neumann, R.; Trautmann, C.; Walter, G.; Alig, I.; Dudkin, S.

    2005-01-01

    Stacks of polyimide foils were irradiated with different swift heavy ions (Ti, Mo, Au) of 11.1 MeV/nucleon energy and fluences between 1 x 10 10 and 2 x 10 12 ions/cm 2 . Beam-induced degradation of the imide group was analyzed by Fourier-transform infrared spectroscopy studying the absorption band at 725 cm -1 as a function of dose. In the UV-Vis spectral range, the absorption edge is shifted to larger wavelengths indicating carbonization. Such modifications are linked to the deposition of a critical dose of 2.7 MGy (Ti) and 1 MGy (Mo, Au). In addition, irradiation-induced changes of the electrical conductivity were studied by means of dielectric spectroscopy

  7. Effective mutagenesis of Arabidopsis by heavy ion beam-irradiation

    Yamamoto, Y.Y.; Saito, H.; Ryuto, H.; Fukunishi, N.; Yoshida, S.; Abe, T.

    2005-01-01

    Full text: Arabidopsis researches frequently include the genetic approach, so efficient, convenient, and safe methods for mutagenesis are required. Currently, the most popular method for in house mutagenesis is application of EMS. Although this method is very effective, its base substitution-type mutations often gives leaky mutants with residual gene functions, leading some difficulty in understanding the corresponding gene functions. Heavy ion beam generated by accelerators gives highest energy transfer rates among known radiation-based mutagenesis methods including X ray, gamma ray, fast neutron, electron and proton irradiation. This feature is thought to give high frequency of the double strand break of genomic DNA and resultant short deletions, resulting frame shift-type mutations. At RIKEN Accelerator Research Facility (RARF, http://www.rarf.riken.go.jp/index-e.html), we have optimized conditions for effective mutagenesis of Arabidopsis regarding to ion species and irradiation dose, and achieved comparable mutation rates to the method with EMS. (author)

  8. Si-nanoparticle synthesis using ion implantation and MeV ion irradiation

    Chulapakorn, T.; Wolff, M.; Primetzhofer, D.; Possnert, G. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J. [Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden); Hallen, A. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

    2015-12-15

    A dielectric matrix with embedded Si-nanoparticles may show strong luminescence depending on nanoparticles size, surface properties, Si-excess concentration and matrix type. Ion implantation of Si ions with energies of a few tens to hundreds of keV in a SiO{sub 2} matrix followed by thermal annealing was identified as a powerful method to form such nanoparticles. The aim of the present work is to optimize the synthesis of Si-nanoparticles produced by ion implantation in SiO{sub 2} by employing MeV ion irradiation as an additional annealing process. The luminescence properties are measured by spectrally resolved photoluminescence including PL lifetime measurement, while X-ray reflectometry, atomic force microscopy and ion beam analysis are used to characterize the nanoparticle formation process. The results show that the samples implanted at 20%-Si excess atomic concentration display the highest luminescence and that irradiation of 36 MeV {sup 127}I ions affects the luminosity in terms of wavelength and intensity. It is also demonstrated that the nanoparticle luminescence lifetime decreases as a function of irradiation fluence. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Large modification in insulator-metal transition of VO{sub 2} films grown on Al{sub 2}O{sub 3} (001) by high energy ion irradiation in biased reactive sputtering

    Azhan, Nurul Hanis; Okimura, Kunio, E-mail: okifn@keyaki.cc.u-tokai.ac.jp [Graduate School of Science and Technology, Tokai University, Hiratsuka 259-1292 (Japan); Ohtsubo, Yoshiyuki; Kimura, Shin-ichi [Graduate School of Frontier Biosciences, Osaka University, Suita 565-0871 (Japan); Zaghrioui, Mustapha; Sakai, Joe [GREMAN, UMR 7347 CNRS, Université François Rabelais de Tours, Parc de Grandmont, 37200 Tours (France)

    2016-02-07

    High energy ion irradiation in biased reactive sputtering enabled significant modification of insulator-metal transition (IMT) properties of VO{sub 2} films grown on Al{sub 2}O{sub 3} (001). Even at a high biasing voltage with mean ion energy of around 325 eV induced by the rf substrate biasing power of 40 W, VO{sub 2} film revealed low IMT temperature (T{sub IMT}) at 309 K (36 °C) together with nearly two orders magnitude of resistance change. Raman measurements from −193 °C evidenced that the monoclinic VO{sub 2} lattice begins to transform to rutile-tetragonal lattice near room temperature. Raman spectra showed the in-plane compressive stress in biased VO{sub 2} films, which results in shortening of V–V distance along a-axis of monoclinic structure, a{sub M}-axis (c{sub R}-axis) and thus lowering the T{sub IMT}. In respect to that matter, significant effects in shortening the in-plane axis were observed through transmission electron microscopy observations. V2p{sub 3/2} spectra from XPS measurements suggested that high energy ion irradiation also induced oxygen vacancies and resulted for an early transition onset and rather broader transition properties. Earlier band gap closing against the temperature in VO{sub 2} film with higher biasing power was also probed by ultraviolet photoelectron spectroscopy. Present results with significant modification of IMT behavior of films deposited at high-energy ion irradiation with T{sub IMT} near the room temperature could be a newly and effective approach to both exploring mechanisms of IMT and further applications of this material, due to the fixed deposition conditions and rather thicker VO{sub 2} films.

  10. Importance of ion energy on SEU in CMOS SRAMs

    Dodd, P.E.; Shaneyfelt, M.R.; Sexton, F.W.; Hash, G.L.; Winokur, P.S. [Sandia National Labs., Albuquerque, NM (United States); Musseau, O.; Leray, J.L. [CEA-DAM, Bruyeres-le-Chatel (France)

    1998-03-01

    The single-event upset (SEU) responses of 16 Kbit to 1 Mbit SRAMs irradiated with low and high-energy heavy ions are reported. Standard low-energy heavy ion tests appear to be sufficiently conservative for technologies down to 0.5 {micro}m.

  11. Irradiation effects on secondary structure of protein induced by keV ions

    Cui, F.Z.; Lin, Y.B.; Zhang, D.M.; Tian, M.B.

    2001-01-01

    Protein secondary structure changes by low-energy ion irradiation are reported for the first time. The selected system is 30 keV N + irradiation on bovine serum albumin (BSA). After irradiation at increasing fluences from 1.0x10 15 to 2.5x10 16 ion/cm 2 , Fourier transform infrared spectra analysis was conducted. It was found that the secondary structures of BSA molecules were very sensitive to ion irradiation. Secondary conformations showed different trends of change during irradiation. With the increase of ion fluence from 0 to 2.5x10 16 ion/cm 2 , the fraction of α-helix and β-turns decreased from 17 to 12%, and from 40 to 31%, respectively, while that of random coil and β-sheet structure increased from 18 to 27%, and from 25 to 30%, respectively. Possible explanations for the secondary conformational changes of protein are proposed. (author)

  12. Materials Modification Under Ion Irradiation: JANNUS Project

    Serruys, Y.; Trocellier, P.; Ruault, M.-O.; Henry, S.; Kaietasov, O.; Trouslard, Ph.

    2004-01-01

    JANNUS (Joint Accelerators for Nano-Science and Nuclear Simulation) is a project designed to study the modification of materials using multiple ion beams and in-situ TEM observation. It will be a unique facility in Europe for the study of irradiation effects, the simulation of material damage due to irradiation and in particular of combined effects. The project is also intended to bring together experimental and modelling teams for a mutual fertilisation of their activities. It will also contribute to the teaching of particle-matter interactions and their applications. JANNUS will be composed of three accelerators with a common experimental chamber and of two accelerators coupled to a 200 kV TEM

  13. Heavy ion irradiation effects of polymer film on absorption of light

    Kasai, Noboru; Seguchi, Tadao [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Arakawa, Tetsuhito

    1997-03-01

    Ion irradiation effects on the absorption of light for three types of polymer films; polyethylene-terephthalate (PET), polyethylene-naphthalate (PEN), and polyether-ether-ketone (PEEK) were investigated by irradiation of heavy ions with Ni{sup 4+}(15MeV), O{sup 6+}(160MeV), and Ar{sup 8+}(175MeV), and compared with electron beams(EB) irradiation. The change of absorption at 400nm by a photometer was almost proportional to total dose for ions and EB. The absorption per absorbed dose was much high in Ni{sup 4+}, but rather small in O{sup 6+} and Ar{sup 8+} irradiation, and the absorption by EB irradiation was accelerated by the temperature of polymer film during irradiation. The beam heating of materials during ion irradiation was assumed, especially for Ni ion irradiation. The heavy ion irradiation effect of polymers was thought to be much affected by the ion beam heating than the linear energy transfer(LET) of radiation source. (author)

  14. Ion irradiation to simulate neutron irradiation in model graphites: Consequences for nuclear graphite

    Galy, N.; Toulhoat, N.; Moncoffre, N.; Pipon, Y.; Bérerd, N.; Ammar, M. R.; Simon, P.; Deldicque, D.; Sainsot, P.

    2017-10-01

    Due to its excellent moderator and reflector qualities, graphite was used in CO2-cooled nuclear reactors such as UNGG (Uranium Naturel-Graphite-Gaz). Neutron irradiation of graphite resulted in the production of 14C which is a key issue radionuclide for the management of the irradiated graphite waste. In order to elucidate the impact of neutron irradiation on 14C behavior, we carried out a systematic investigation of irradiation and its synergistic effects with temperature in Highly Oriented Pyrolitic Graphite (HOPG) model graphite used to simulate the coke grains of nuclear graphite. We used 13C implantation in order to simulate 14C displaced from its original structural site through recoil. The collision of the impinging neutrons with the graphite matrix carbon atoms induces mainly ballistic damage. However, a part of the recoil carbon atom energy is also transferred to the graphite lattice through electronic excitation. The effects of the different irradiation regimes in synergy with temperature were simulated using ion irradiation by varying Sn(nuclear)/Se(electronic) stopping power. Thus, the samples were irradiated with different ions of different energies. The structure modifications were followed by High Resolution Transmission Electron Microscopy (HRTEM) and Raman microspectrometry. The results show that temperature generally counteracts the disordering effects of irradiation but the achieved reordering level strongly depends on the initial structural state of the graphite matrix. Thus, extrapolating to reactor conditions, for an initially highly disordered structure, irradiation at reactor temperatures (200 - 500 °C) should induce almost no change of the initial structure. On the contrary, when the structure is initially less disordered, there should be a "zoning" of the reordering: In "cold" high flux irradiated zones where the ballistic damage is important, the structure should be poorly reordered; In "hot" low flux irradiated zones where the ballistic

  15. Modification of graphene by ion irradiation

    Bukowska, Hanna; Akcoeltekin, Sevilay; El Kharrazi, Mourad; Schleberger, Marika [Universitaet Duisburg-Essen, Fakultaet fuer Physik, Duisburg (Germany); Osmani, Orkhan [Universitaet Duisburg-Essen, Fakultaet fuer Physik, Duisburg (Germany); Technische Universitaet Kaiserslautern, Fachbereich Physik, Gottlieb-Daimler-Strasse, Gebaeude 47, 67663 Kaiserslautern (Germany)

    2010-07-01

    Ion irradiation can be used to modify surfaces on the nanometer scale. We investigate graphene on different insulator (SrTiO{sub 3}, TiO{sub 2}, and Al{sub 2}O{sub 3}) and semiconductor (SiO{sub 2}) substrates. The bombardment of those target surfaces with swift heavy ions under grazing angle of incidence creates chains of nanodots on the substrate and folds graphene to typical origami-like structures. The shape of the folded graphene seems to depend on the length of the tracks. The length can be controlled by the angle of incidence. From the analysis of atomic force microscopy measurements, we classify the different types of modifications, with the aim to determine the relationship between chain length and origami shape. Further more we want to develop a theoretical understanding of the physical processes leading to the folding.

  16. Surface amorphization in Al2O3 induced by swift heavy ion irradiation

    Okubo, N.; Ishikawa, N.; Sataka, M.; Jitsukawa, S.

    2013-01-01

    Microstructure in single crystalline Al 2 O 3 developed during irradiation by swift heavy ions has been investigated. The specimens were irradiated by Xe ions with energies from 70 to 160 MeV at ambient temperature. The fluences were in the range from 1.0 × 10 13 to 1.0 × 10 15 ions/cm 2 . After irradiations, X-ray diffractometry (XRD) measurements and cross sectional transmission electron microscope (TEM) observations were conducted. The XRD results indicate that in the initial stage of amorphization in single crystalline Al 2 O 3 , high-density S e causes the formation of new planes and disordering. The new distorted lattice planes formed in the early stage of irradiation around the fluence of 5.0 × 10 13 ions/cm 2 for single crystalline Al 2 O 3 irradiated with 160 MeV-Xe ions. Energy dependence on structural modification was also examined in single crystalline Al 2 O 3 irradiated by swift heavy ions. The XRD results indicate that the swift heavy ion irradiation causes the lattice expansion and the structural modification leading to amorphization progresses above the energy around 100 MeV in this XRD study. The TEM observations demonstrated that amorphization was induced in surface region in single crystalline Al 2 O 3 irradiated by swift heavy ions above the fluence expected from the results of XRD. Obvious boundary was observed in the cross sectional TEM images. The crystal structure of surface region above the boundary was identified to be amorphous and deeper region to be single crystal. The threshold fluence of amorphization was found to be around 1.0 × 10 14 ions/cm 2 in the case over 80 MeV swift heavy ion irradiation and the fluence did not depend on the crystal structures

  17. Surface amorphization in Al2O3 induced by swift heavy ion irradiation

    Okubo, N.; Ishikawa, N.; Sataka, M.; Jitsukawa, S.

    2013-11-01

    Microstructure in single crystalline Al2O3 developed during irradiation by swift heavy ions has been investigated. The specimens were irradiated by Xe ions with energies from 70 to 160 MeV at ambient temperature. The fluences were in the range from 1.0 × 1013 to 1.0 × 1015 ions/cm2. After irradiations, X-ray diffractometry (XRD) measurements and cross sectional transmission electron microscope (TEM) observations were conducted. The XRD results indicate that in the initial stage of amorphization in single crystalline Al2O3, high-density Se causes the formation of new planes and disordering. The new distorted lattice planes formed in the early stage of irradiation around the fluence of 5.0 × 1013 ions/cm2 for single crystalline Al2O3 irradiated with 160 MeV-Xe ions. Energy dependence on structural modification was also examined in single crystalline Al2O3 irradiated by swift heavy ions. The XRD results indicate that the swift heavy ion irradiation causes the lattice expansion and the structural modification leading to amorphization progresses above the energy around 100 MeV in this XRD study. The TEM observations demonstrated that amorphization was induced in surface region in single crystalline Al2O3 irradiated by swift heavy ions above the fluence expected from the results of XRD. Obvious boundary was observed in the cross sectional TEM images. The crystal structure of surface region above the boundary was identified to be amorphous and deeper region to be single crystal. The threshold fluence of amorphization was found to be around 1.0 × 1014 ions/cm2 in the case over 80 MeV swift heavy ion irradiation and the fluence did not depend on the crystal structures.

  18. Experimental modeling of high burn-up structure in SIMFUEL with ion irradiation

    Baranov, V.; Isaenkova, M.; Lunev, A.; Tenishev, A.; Khlunov, A.

    2013-01-01

    Experiments are conducted to simulate high burn-up structure in accelerator conditions. Three ion irradiation schemes are used: 1. Xe 27+ 160 MeV up to 5x10 15 cm -2 (thermal spikes). 2. Xe 16+ 320 keV up to 1x10 17 cm -2 (collision cascades). 3. He + 20 keV up to 5,5x10 17 cm -2 (implantation stage). Structural characterization performed by scanning electron microscopy, X-ray analysis and atomic force microscopy revealed prominent grain refinement in case of Xe 27+ irradiation. Artificial energy variation for incident ions showed varying size of subgrains. At maximum energy of incident ions, subgrain size amounts ∼ 320 nm. Moving to the edge of irradiated region changes the size to ∼ 170 nm. Typical size of coherent scattering regions matches subgrain size for high-energy irradiation. Low-energy irradiation results in less significant structural changes: flaky structure at random sites for samples irradiated with low-energy xenon ions and bubble nucleation for helium irradiation. Dislocation density increases significantly, and it is shown that a single fluence dependence exists for low- and high-energy irradiation. (authors)

  19. Binding energies of cluster ions

    Parajuli, R.; Matt, S.; Scheier, P.; Echt, O.; Stamatovic, A.; Maerk, T.D.

    2002-01-01

    The binding energy of charged clusters may be measured by analyzing the kinetic energy released in the metastable decay of mass selected parent ions. Using finite heat bath theory to determine the binding energies of argon, neon, krypton, oxygen and nitrogen from their respective average kinetic energy released were carried out. A high-resolution double focussing two-sector mass spectrometer of reversed Nier-Johnson type geometry was used. MIKE ( mass-analysed ion kinetic energy) were measured to investigate decay reactions of mass-selected ions. For the inert gases neon (Ne n + ), argon (Ar n + ) and krypton (Kr n + ), it is found that the binding energies initially decrease with increasing size n and then level off at a value above the enthalpy of vaporization of the condensed phase. Oxygen cluster ions shown a characteristic dependence on cluster size (U-shape) indicating a change in the metastable fragmentation mechanism when going from the dimer to the decamer ion. (nevyjel)

  20. Microanalysis on the Hydrogen Ion Irradiated 50 wt pct TiC-C Films

    Hui JIANG; Yaoguang LIU; Ningkang HUANG

    2007-01-01

    The 50 wt pct TiC-C films were prepared on stainless steel substrates by using a technique of ion beam mixing.These films were irradiated by hydrogen ion beam with a dose of 1×1018 ions/cm2 and an energy of 5 keV.Microanalysis of X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) were used to analyze the films before and after hydrogen ion irradiation and to study the mechanism of hydrogen resistance.

  1. Structural response of titanate pyrochlores to swift heavy ion irradiation

    Shamblin, Jacob; Tracy, Cameron L.; Ewing, Rodney C.; Zhang, Fuxiang; Li, Weixing; Trautmann, Christina; Lang, Maik

    2016-01-01

    The structure, size, and morphology of ion tracks resulting from irradiation of five different pyrochlore compositions (A 2 Ti 2 O 7 , A = Yb, Er, Y, Gd, Sm) with 2.2 GeV 197 Au ions were investigated by means of synchrotron X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Radiation-induced amorphization occurred in all five materials analyzed following an exponential rate as a function of ion fluence. XRD patterns showed a general trend of increasing susceptibility of amorphization with increasing ratio of A- to B-site cation ionic radii (r A /r B ) with the exception of Y 2 Ti 2 O 7 and Sm 2 Ti 2 O 7 . This indicates that the track size does not necessarily increase with r A /r B , in contrast with results from previous swift heavy ion studies on Gd 2 Zr 2-x Ti x O 7 pyrochlore materials. For Y 2 Ti 2 O 7 , this effect is attributed to the significantly lower electron density of this material relative to the lanthanide-bearing pyrochlores, thus lowering the electronic energy loss (dE/dx) of the high-energy ions in this composition. An energy loss normalization procedure was performed which reveals an initial increase of amorphous track size with r A /r B that saturates above a cation radius ratio larger than Gd 2 Ti 2 O 7 . This is in agreement with previous low-energy ion irradiation experiments and first principles calculations of the disordering energy of titanate pyrochlores indicating that the same trends in disordering energy apply to radiation damage induced in both the nuclear and electronic energy loss regimes. HRTEM images indicate that single ion tracks in Yb 2 Ti 2 O 7 and Er 2 Ti 2 O 7 , which have small A-site cations and low r A /r B , exhibit a core-shell structure with a small amorphous core surrounded by a larger disordered shell. In contrast, single tracks in Gd 2 Ti 2 O 7 and Sm 2 Ti 2 O 7 , have a larger amorphous core with minimal disordered shells.

  2. RBE of cells irradiated by carbon ions

    Li Wenjian; Zhou Guangming; Wei Zengquan; Wang Jufang; Dang Bingrong; Li Qiang; Xie Hongmei

    2002-01-01

    The mouse melanoma cells (B16), human cervical squamous carcinoma cells (HeLa), Chinese hamster pulmonary cells V79, and human hepatoma cells (SMMC-7721) were collected for studying. The cells of 5 x 10 5 /ml were seeded in 35 mm diameter petri dish and allowed to grow one day, and then the medium in petri dishes was removed away, the cells were washed once with phosphate-buffered saline (PBS), petri dishes was covered with 4μm thickness Mylar film. The cells were irradiated by 12 C ion beam with LETs of 125.5, 200, 700 keV/μm in water generated from HIRFL (Heavy Ion Research Facility in Lanzhou). For 60 Co γ-ray experiment, the cells of 5 x 10 4 /ml were grown in 20 ml culture flasks including 1.5 ml cell suspension and directly used for irradiation. Following irradiation, the cells were trypsinized, counted, plated at appropriate densities in growth medium and then seeded in 60 mm diameter culture dishes. Each dish was filled 4 ml standard medium, and incubated for 8-12 days at 37 degree C incubator containing 5% CO 2 . The cultures were then rinsed with PBS buffer at pH 6.8, fixed with Carnoy's fluid, stained for 8 min with Giemsa (1:20, pH 6.8), and colonies containing more than 50 cells were scored. Their relative biological effectivenesses (RBE) were investigated. The results show that RBE depends on cellular types and increases with increasing of cellular survival level when LET is at 125.5 keV/μm, and decreases with increasing LET when LET ≥ 125.5 keV/μm

  3. Self-organizing nanodot structures on InP surfaces evolving under low-energy ion irradiation: analysis of morphology and composition.

    Radny, Tobias; Gnaser, Hubert

    2014-01-01

    Surfaces of InP were bombarded by 1.9 keV Ar(+) ions under normal incidence. The total accumulated ion fluence Φ the samples were exposed to was varied from 1 × 10(17) cm(-2) to 3 × 10(18) cm(-2), and ion fluxes f of (0.4 - 2) × 10(14) cm(-2) s(-1) were used. The surface morphology resulting from these ion irradiations was examined by atomic force microscopy (AFM). Generally, nanodot structures are formed on the surface; their dimensions (diameter, height and separation), however, were found to depend critically on the specific bombardment conditions. As a function of ion fluence, the mean radius r, height h, and spacing l of the dots can be fitted by power-law dependences: r ∝ Φ(0.40), h ∝ Φ(0.48), and l ∝ Φ(0.19). In terms of ion flux, there appears to exist a distinct threshold: below f ~ (1.3 ± 0.2) × 10(14) cm(-2) s(-1), no ordering of the dots exists and their size is comparatively small; above that value of f, the height and radius of the dots becomes substantially larger (h ~ 40 nm and r ~ 50 nm). This finding possibly indicates that surface diffusion processes could be important. In order to determine possible local compositional changes in these nanostructures induced by ion impact, selected samples were prepared for atom probe tomography (APT). The results indicate that APT can provide analytical information on the composition of individual InP nanodots. By means of 3D APT data, the surface region of such nanodots evolving under ion bombardment could be examined with atomic spatial resolution. At the InP surface, the values of the In/P concentration ratio are distinctly higher over a distance of approximately 1 nm and amount to 1.3 to 1.7.

  4. Investigations of Atomic Transport Induced by Heavy Ion Irradiation

    Banwell, Thomas Clyde

    The mechanisms of atomic transport induced by ion irradiation generally fall into the categories of anisotropic or isotropic processes. Typical examples of these are recoil implantation and cascade mixing, respectively. We have measured the interaction of these processes in the mixing of Ti/SiO(,2)/Si, Cr/SiO(,2)/Si and Ni/SiO(,2)/Si multi-layers irradiated with Xe at fluences of 0.01 - 10 x 10('15)cm('-2). The fluence dependence of net metal transport into the underlying layers was measured with different thicknesses of SiO(,2) and different sample temperatures during irradiation (-196 to 500C). There is a linear dependence at low fluences. At high fluences, a square-root behavior predominates. For thin SiO(,2) layers (primary recoils is quite pronounced since the gross mixing is small. A significant correlation exists between the mixing and the energy deposited through elastic collisions F(,D ). Several models are examined in an attempt to describe the transport process in Ni/SiO(,2). It is likely that injection of Ni by secondary recoil implantation is primarily responsible for getting Ni into the SiO(,2). Secondary recoil injection is thought to scale with F(,D). Trends in the mixing rates indicate that the dominant mechanism for Ti and Cr could be the same as for Ni. The processes of atomic transport and phase formation clearly fail to be separable at higher temperatures. A positive correlation with chemical reactivity emerges at higher irradiation temperatures. The temperature at which rapid mixing occurs is not much below that for spontaneous thermal reaction. Less Ni is retained in the SiO(,2) at high irradiation temperatures. Ni incorporated in the SiO(,2) by low temperature irradiation is not expelled during a consecutive high temperature irradiation. The Ni remains trapped within larger clusters during a sequential 500C irradiation. (Abstract shortened with permission of author.).

  5. Basic Design Study on 1-MV Electrostatic Accelerator for ion irradiation

    Cho, Yongsub; Kim, Kyeryung; Lee, Chanyoung

    2014-01-01

    The KOMAC (KOrea Multi-purpose Accelerator Complex) has electrostatic ion accelerators whose terminal voltages are less than 100kV. To extend ion beam irradiations with higher energy ions for industrial purposes, an electrostatic accelerator of 1-MV terminal voltage should have been studied. For industrial applications, the most important features of the accelerator are high current and high reliability for high irradiation dose and high through-put with high current and long irradiation time. The basic study on 1-MV electrostatic ion accelerator for industrial applications has been done. The key components are a high voltage power supply, an ion source, and an accelerating column. The feasibility study for fabrication is being performed. Especially the R and D for ion source is required. The 1-MV ion accelerator will be constructed with domestic companies and installed in the beam application research building, which is under construction in the site of KOMAC at Gyeongju

  6. Observations of defect structure evolution in proton and Ni ion irradiated Ni-Cr binary alloys

    Briggs, Samuel A., E-mail: sabriggs2@wisc.edu [University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Barr, Christopher M. [Drexel University, 3141 Chestnut Street, Philadelphia, PA 19104 (United States); Pakarinen, Janne [University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); SKC-CEN Belgian Nuclear Research Centre, Boeretang 200, B-2400 Mol (Belgium); Mamivand, Mahmood [University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Hattar, Khalid [Sandia National Laboratories, PO Box 5800, Albuquerque, NM 87185 (United States); Morgan, Dane D. [University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Taheri, Mitra [Drexel University, 3141 Chestnut Street, Philadelphia, PA 19104 (United States); Sridharan, Kumar [University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States)

    2016-10-15

    Two binary Ni-Cr model alloys with 5 wt% Cr and 18 wt% Cr were irradiated using 2 MeV protons at 400 and 500 °C and 20 MeV Ni{sup 4+} ions at 500 °C to investigate microstructural evolution as a function of composition, irradiation temperature, and irradiating ion species. Transmission electron microscopy (TEM) was applied to study irradiation-induced void and faulted Frank loops microstructures. Irradiations at 500 °C were shown to generate decreased densities of larger defects, likely due to increased barriers to defect nucleation as compared to 400 °C irradiations. Heavy ion irradiation resulted in a larger density of smaller voids when compared to proton irradiations, indicating in-cascade clustering of point defects. Cluster dynamics simulations were in good agreement with the experimental findings, suggesting that increases in Cr content lead to an increase in interstitial binding energy, leading to higher densities of smaller dislocation loops in the Ni-18Cr alloy as compared to the Ni-5Cr alloy. - Highlights: • Binary Ni-Cr alloys were irradiated with protons or Ni ions at 400 and 500 °C. • Higher irradiation temperatures yield increased size, decreased density of defects. • Hypothesize that varying Cr content affects interstitial binding energy. • Fitting CD models for loop nucleation to data supports this hypothesis.

  7. Early Stage of Deformation under Nanoindenter Tip of Ion-irradiated Single Crystals

    Shin, Chan Sun; Jin, Hyung Ha; Kwon, Jun Hyun

    2010-01-01

    Ion irradiation has been used for almost 40 years to emulate the effect of neutrons. Ion irradiation has a number of advantages in terms of time and expenses compared to neutron irradiation. Ion irradiation is expected to greatly contribute to the development of Fusion and Gen IV materials. Ions have short penetration depth, and they induce continuously varying dose rate over the penetration depth. Although it depends on the energy and species of incident ions, the depth of ion-irradiated region is in general on the order of a few micron meters. Depth controlled probing technique is required to measure the mechanical properties of ion-irradiated layer, and nanoindentation is widely used. During nanoindentation, a hard tip with known properties is pressed into a material which has unknown properties. The depth of penetration and load on the indenter are recorded during loading and unloading. The initial Loading depth curve follows the Hertzian elastic solution, and at a certain load, a sudden displacement excursion occurs in indenter depth and then hardening follows. This is called 'Pop-in' event, and since residual impression can be found only after pop-ins, the pop-in is regarded as the onset of plasticity. The objectives of this research are to investigate the effects of ion irradiation on popins, and to examine dislocation nucleation and propagation at the onset of plasticity by using MD simulations

  8. Early Stage of Deformation under Nanoindenter Tip of Ion-irradiated Single Crystals

    Shin, Chan Sun; Jin, Hyung Ha; Kwon, Jun Hyun [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2010-10-15

    Ion irradiation has been used for almost 40 years to emulate the effect of neutrons. Ion irradiation has a number of advantages in terms of time and expenses compared to neutron irradiation. Ion irradiation is expected to greatly contribute to the development of Fusion and Gen IV materials. Ions have short penetration depth, and they induce continuously varying dose rate over the penetration depth. Although it depends on the energy and species of incident ions, the depth of ion-irradiated region is in general on the order of a few micron meters. Depth controlled probing technique is required to measure the mechanical properties of ion-irradiated layer, and nanoindentation is widely used. During nanoindentation, a hard tip with known properties is pressed into a material which has unknown properties. The depth of penetration and load on the indenter are recorded during loading and unloading. The initial Loading depth curve follows the Hertzian elastic solution, and at a certain load, a sudden displacement excursion occurs in indenter depth and then hardening follows. This is called 'Pop-in' event, and since residual impression can be found only after pop-ins, the pop-in is regarded as the onset of plasticity. The objectives of this research are to investigate the effects of ion irradiation on popins, and to examine dislocation nucleation and propagation at the onset of plasticity by using MD simulations

  9. Simulating the ballistic effects of ion irradiation in the binary collision approximation: A first step toward the ion mixing framework

    Demange, G.; Antoshchenkova, E.; Hayoun, M.; Lunéville, L.; Simeone, D.

    2017-01-01

    Understanding ballistic effects induced by ion beam irradiation can be a key point for controlling and predicting the microstructure of irradiated materials. Meanwhile, the ion mixing framework suggests an average description of displacement cascades may be sufficient to estimate the influence of ballistic relocations on the microstructure. In this work, the BCA code MARLOWE was chosen for its ability to account for the crystal structure of irradiated materials. A first set of simulations was performed on pure copper for energies ranging from 0.5 keV to 20 keV. These simulations were validated using molecular dynamics (MD). A second set of simulations on AgCu irradiated by 1 MeV krypton ions was then carried out using MARLOWE only, as such energy is beyond reach for molecular dynamics. MARLOWE simulations are found to be in good agreement with experimental results, which suggests the predictive potential of the method.

  10. Simulating the ballistic effects of ion irradiation in the binary collision approximation: A first step toward the ion mixing framework

    Demange, G., E-mail: gilles.demange@univ-rouen.fr [DEN/MDN/SRMA/LA2M, CEA Saclay, F-91191 Gif-sur-Yvette (France); Antoshchenkova, E. [DEN/MDN/SRMA/LA2M, CEA Saclay, F-91191 Gif-sur-Yvette (France); Hayoun, M. [LSI, École Polytechnique, CNRS, CEA Saclay, Université Paris-Saclay, F-91128 Palaiseau (France); Lunéville, L. [DEN/SERMA/LLPR, CEA Saclay, F-91191 Gif sur Yvette (France); Simeone, D. [DEN/MDN/SRMA/LA2M, CEA Saclay, F-91191 Gif-sur-Yvette (France)

    2017-04-01

    Understanding ballistic effects induced by ion beam irradiation can be a key point for controlling and predicting the microstructure of irradiated materials. Meanwhile, the ion mixing framework suggests an average description of displacement cascades may be sufficient to estimate the influence of ballistic relocations on the microstructure. In this work, the BCA code MARLOWE was chosen for its ability to account for the crystal structure of irradiated materials. A first set of simulations was performed on pure copper for energies ranging from 0.5 keV to 20 keV. These simulations were validated using molecular dynamics (MD). A second set of simulations on AgCu irradiated by 1 MeV krypton ions was then carried out using MARLOWE only, as such energy is beyond reach for molecular dynamics. MARLOWE simulations are found to be in good agreement with experimental results, which suggests the predictive potential of the method.

  11. Structural characterization of swift heavy ion irradiated polycarbonate

    Singh, Lakhwant; Samra, Kawaljeet Singh

    2007-01-01

    Makrofol-N polycarbonate thin films were irradiated with copper (50 MeV) and nickel (86 MeV) ions. The modified films were analyzed by UV-VIS, FTIR and XRD techniques. The experimental data was used to evaluate the formation of chromophore groups (conjugated system of bonds), degradation cross-section of the special functional groups, the alkyne formation and the amorphization cross-section. The investigation of UV-VIS spectra shows that the formation of chromophore groups is reduced at larger wavelength, however its value increases with the increase of ion fluence. Degradation cross-section for the different chemical groups present in the polycarbonate chains was evaluated from the FTIR data. It was found that there was an increase of degradation cross-section of chemical groups with the increase of electronic energy loss in polycarbonate. The alkyne and alkene groups were found to be induced due to swift heavy ion irradiation in polycarbonate. The radii of the alkyne production of about 2.74 and 2.90 nm were deduced for nickel (86 MeV) and copper (50 MeV) ions respectively. XRD analysis shows the decrease of the main XRD peak intensity. Progressive amorphization process of Makrofol-N with increasing fluence was traced by XRD measurements

  12. Nanostructured surface processing by an intense pulsed ion beam irradiation

    Yatsuzuka, M.; Masuda, T.; Yamasaki, T.; Uchida, H.; Nobuhara, S.; Hashimoto, Y.; Yoshihara, Y.

    1997-01-01

    Metal surface modification by irradiating an intense pulsed ion beam (IPIB) with short pulse width has been studied experimentally. An IPIB irradiation to a target leads to rapid heating above its melting point. After the beam is turned off, the heated region is immediately cooled by thermal conduction at a cooling rate of typically 10 10 K/s. This rapid cooling and resolidification results in generation of nanostructured phase in the top of surface. The typical hydrogen IPIB parameters are 200 kV of energy, 500 A/cm 2 of current density and 70 ns of pulsewidth. The IPIB was irradiated on a pure titanium to generate nanocrystalline phase. The IPIB-irradiated surface was examined with X-ray diffraction, SEM, and HR-TEM. The randomly oriented lattice fringes as well as a halo diffraction pattern are observed in the HR-TEM micrograph of IPIB-irradiated titanium. The average grain size is found to be 32 nanometers

  13. Effects of ion beam irradiation on the microstructures and strengths of different carbon fibers

    Oku, Tatsuo; Kurumada, Akira; Kawamata, Kiyohiro; Inagaki, Michio

    1998-01-01

    The high energy argon ion was irradiated to different carbon fibers with various microstructures. The cross-sectional structures and strengths properties have been evaluated before and after ion irradiation. As a result, the diameter of fibers decreased due to ion irradiation, except for the fiber with dual structure. The tensile strength also decreased due to ion irradiation, except for fibers which were not heat-treated. This suggests that it is necessary to consider not only the defects in the vertical cross-section but also changes in defect structures in the axial direction. The results of computer simulation indicated that argon ion with 175MeV/1μA produced homogeneous defects in the carbon fibers with the diameter of about 20 μm. (author)

  14. Rows of Dislocation Loops in Aluminium Irradiated by Aluminium Ions

    Henriksen, L.; Johansen, A.; Koch, J.

    1967-01-01

    Single-crystal aluminium specimens, irradiated with 50-keV aluminium ions, contain dislocation loops that are arranged in regular rows along <110 > directions. ©1967 The American Institute of Physics......Single-crystal aluminium specimens, irradiated with 50-keV aluminium ions, contain dislocation loops that are arranged in regular rows along directions. ©1967 The American Institute of Physics...

  15. Elaboration by ion implantation of cobalt nano-particles in silica layers and modifications of their properties by electron and swift heavy ion irradiations; Elaboration par implantation ionique de nanoparticules de cobalt dans la silice et modifications de leurs proprietes sous irradiation d'electrons et d'ions de haute energie

    D' Orleans, C

    2003-07-15

    This work aims to investigate the capability of ion irradiations to elaborate magnetic nano-particles in silica layers, and to modify their properties. Co{sup +} ions have been implanted at 160 keV at fluences of 2.10{sup 16}, 5.10{sup 16} and 10{sup 17} at/cm{sup 2}, and at temperatures of 77, 295 and 873 K. The dependence of the particle size on the implantation fluence, and more significantly on the implantation temperature has been shown. TEM (transmission electronic microscopy) observations have shown a mean diameter varying from 1 nm for implantations at 2.10{sup 16} Co{sup +}/cm{sup 2} at 77 K, to 9.7 nm at 10{sup 17} Co{sup +}/cm{sup 2} at 873 K. For high temperature implantations, two regions of particles appear. Simulations based on a kinetic 3-dimensional lattice Monte Carlo method reproduce quantitatively the features observed for implantations. Thermal treatments induce the ripening of the particles. Electron irradiations at 873 K induce an important increase in mean particle sizes. Swift heavy ion irradiations also induce the ripening of the particles for low fluences, and an elongation of the particles in the incident beam direction for high fluences, resulting in a magnetic anisotropy. Mechanisms invoked in thermal spike model could also explain this anisotropic growth. (author)

  16. Elaboration by ion implantation of cobalt nano-particles in silica layers and modifications of their properties by electron and swift heavy ion irradiations; Elaboration par implantation ionique de nanoparticules de cobalt dans la silice et modifications de leurs proprietes sous irradiation d'electrons et d'ions de haute energie

    D' Orleans, C

    2003-07-15

    This work aims to investigate the capability of ion irradiations to elaborate magnetic nano-particles in silica layers, and to modify their properties. Co{sup +} ions have been implanted at 160 keV at fluences of 2.10{sup 16}, 5.10{sup 16} and 10{sup 17} at/cm{sup 2}, and at temperatures of 77, 295 and 873 K. The dependence of the particle size on the implantation fluence, and more significantly on the implantation temperature has been shown. TEM (transmission electronic microscopy) observations have shown a mean diameter varying from 1 nm for implantations at 2.10{sup 16} Co{sup +}/cm{sup 2} at 77 K, to 9.7 nm at 10{sup 17} Co{sup +}/cm{sup 2} at 873 K. For high temperature implantations, two regions of particles appear. Simulations based on a kinetic 3-dimensional lattice Monte Carlo method reproduce quantitatively the features observed for implantations. Thermal treatments induce the ripening of the particles. Electron irradiations at 873 K induce an important increase in mean particle sizes. Swift heavy ion irradiations also induce the ripening of the particles for low fluences, and an elongation of the particles in the incident beam direction for high fluences, resulting in a magnetic anisotropy. Mechanisms invoked in thermal spike model could also explain this anisotropic growth. (author)

  17. Amorphous molecular junctions produced by ion irradiation on carbon nanotubes

    Wang Zhenxia; Yu Liping; Zhang Wei; Ding Yinfeng; Li Yulan; Han Jiaguang; Zhu Zhiyuan; Xu Hongjie; He Guowei; Chen Yi; Hu Gang

    2004-01-01

    Experiments and molecular dynamics have demonstrated that electron irradiation could create molecular junctions between crossed single-wall carbon nanotubes. Recently molecular dynamics computation predicted that ion irradiation could also join single-walled carbon nanotubes. Employing carbon ion irradiation on multi-walled carbon nanotubes, we find that these nanotubes evolve into amorphous carbon nanowires, more importantly, during the process of which various molecular junctions of amorphous nanowires are formed by welding from crossed carbon nanotubes. It demonstrates that ion-beam irradiation could be an effective way not only for the welding of nanotubes but also for the formation of nanowire junctions

  18. Graphite irradiated by swift heavy ions under grazing incidence

    Liu, J; Müller, C; Neumann, R

    2002-01-01

    Highly oriented pyrolytic graphite is irradiated with various heavy projectiles (Ne, Ni, Zn, Xe and U) in the MeV to GeV energy range under different oblique angles of incidence. Using scanning tunneling microscopy, the impact zones are imaged as hillocks protruding from the surface. The diameter of surface-grazing tracks varies between 3 nm (Ne) and 6 nm (U), which is about twice as large as under normal beam incidence. Exclusively for U and Xe projectiles, grazing tracks exhibit long comet-like tails consisting of successive little bumps indicating that the damage along the ion path is discontinuous even for highest electronic stopping powers.

  19. Swift heavy ions induced irradiation effects in monolayer graphene and highly oriented pyrolytic graphite

    Zeng, J.; Yao, H.J.; Zhang, S.X.; Zhai, P.F.; Duan, J.L.; Sun, Y.M.; Li, G.P.; Liu, J.

    2014-01-01

    Monolayer graphene and highly oriented pyrolytic graphite (HOPG) were irradiated by swift heavy ions ( 209 Bi and 112 Sn) with the fluence between 10 11 and 10 14 ions/cm 2 . Both pristine and irradiated samples were investigated by Raman spectroscopy. It was found that D and D′ peaks appear after irradiation, which indicated the ion irradiation introduced damage both in the graphene and graphite lattice. Due to the special single atomic layer structure of graphene, the irradiation fluence threshold Φ th of the D band of graphene is significantly lower ( 11 ions/cm 2 ) than that (2.5 × 10 12 ions/cm 2 ) of HOPG. The larger defect density in graphene than in HOPG indicates that the monolayer graphene is much easier to be damaged than bulk graphite by swift heavy ions. Moreover, different defect types in graphene and HOPG were detected by the different values of I D /I D′ . For the irradiation with the same electronic energy loss, the velocity effect was found in HOPG. However, in this experiment, the velocity effect was not observed in graphene samples irradiated by swift heavy ions

  20. Biological effect of penetration controlled irradiation with ion beams

    Tanaka, Atsushi; Shimizu, Takashi; Kikuchi, Masahiro; Kobayashi, Yasuhiko; Watanabe, Hiroshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Yamashita, Takao

    1997-03-01

    To investigate the effect of local irradiation with ion beams on biological systems, technique for penetration controlled irradiation has been established. The range in a target was controlled by changing the distance from beam window in the atmosphere, and could be controlled linearly up to about 31 {mu}m in biological material. In addition, the effects of the penetration controlled irradiations with 1.5 MeV/u C and He ions were examined using tobacco pollen. The increased frequency of leaky pollen produced by ion beams suggests that the efficient pollen envelope damages would be induced at the range-end of ion beams. (author)

  1. Effect of heavy ion irradiation on C 60

    Lotha, S.; Ingale, A.; Avasthi, D. K.; Mittal, V. K.; Mishra, S.; Rustagi, K. C.; Gupta, A.; Kulkarni, V. N.; Khathing, D. T.

    1999-06-01

    Thin films of C 60 were subjected to swift heavy ion irradiation spanning the region from 2 to 11 keV/nm of electronic excitation. Studies of the irradiated films by Raman spectroscopy indicated polymerization and damage of the film with an ion fluence. The ion track radii are estimated for various ions using the Raman data. Photoluminescence spectroscopy of the irradiated film indicated a decrease in the C 60 phase with a dose, and an increase in the intensity at the 590 nm wavelength, which is attributed to an increase in the oxygen content.

  2. A study of defect cluster formation in vanadium by heavy ion irradiation

    Sekimura, Naoto; Shirao, Yasuyuki; Morishita, Kazunori [Tokyo Univ. (Japan)

    1996-10-01

    Formation of defect clusters in thin foils of vanadium was investigated by heavy ion irradiation. In the very thin region of the specimens less than 20 nm, vacancy clusters were formed under gold ion irradiation, while very few clusters were detected in the specimens irradiated with 200 and 400 keV self-ions up to 1 x 10{sup 16} ions/m{sup 2}. The density of vacancy clusters were found to be strongly dependent on ion energy. Only above the critical value of kinetic energy transfer density in vanadium, vacancy clusters are considered to be formed in the cascade damage from which interstitials can escape to the specimen surface in the very thin region. (author)

  3. Investigations of structural, dielectric and optical properties on silicon ion irradiated glycine monophosphate single crystals

    Kanagasekaran, T. [Department of Physics, Anna University, Chennai 600 025 (India); Department of Physics and Astrophysics, University of Delhi, New Delhi 110 007 (India); Mythili, P. [Department of Physics, Anna University, Chennai 600 025 (India); Bhagavannarayana, G. [Materials Characterization Division, National Physical Laboratory, New Delhi 110012 (India); Kanjilal, D. [Inter University Accelerator Centre, New Delhi 110 067 (India); Gopalakrishnan, R. [Department of Physics, Anna University, Chennai 600 025 (India)], E-mail: krgkrishnan@annauniv.edu

    2009-08-01

    The 50 MeV silicon ion irradiation induced modifications on structural, optical and dielectric properties of solution grown glycine monophosphate (GMP) crystals were studied. The high-resolution X-ray diffraction study shows the unaltered value of integrated intensity on irradiation. The dielectric constant as a function of frequency and temperature was studied. UV-visible studies reveal the decrease in bandgap values on irradiation and presence of F-centers. The fluorescence spectrum shows the existence of some energy levels, which remains unaffected after irradiation. The scanning electron micrographs reveal the defects formed on irradiation.

  4. Shape manipulation of ion irradiated Ag nanoparticles embedded in lithium niobate

    Wolf, S.; Rensberg, J.; Johannes, A.; Thomae, R.; Smit, F.; Neveling, R.; Moodley, M.; Bierschenk, T.; Rodriquez, M.; Afra, B.; Hasan, Shakeeb Bin; Rockstuhl, C.; Ridgway, M.; Bharuth-Ram, K.; Ronning, C.

    2016-01-01

    Spherical silver nanoparticles were prepared by means of ion beam synthesis in lithium niobate. The embedded nanoparticles were then irradiated with energetic 84Kr and 197Au ions, resulting in different electronic energy losses between 8.1 and 27.5 keV nm−1 in the top layer of the samples. Due to

  5. Depth distribution of bubbles in He-ion irradiated nickel and the mechanism of blister formation

    Fenske, G.; Das, S.K.; Kaminsky, M.; Miley, G.H.

    1978-01-01

    Studies carried out to understand the experimental observation that the blister skin thickness for many metals irradiated with He + ions of energies lower than 20 keV is a factor of two or more larger than the calculated projected range are reported. Nickel foils were used with 20 and 500 keV helium ions

  6. Medium energy ion scattering (MEIS)

    Dittmann, K.; Markwitz, A.

    2009-01-01

    This report gives an overview about the technique and experimental study of medium energy ion scattering (MEIS) as a quantitative technique to determine and analyse the composition and geometrical structure of crystalline surfaces and near surface-layers by measuring the energy and yield of the backscattered ions. The use of a lower energy range of 50 to 500 keV accelerated ions impinging onto the target surface and the application of a high-resolution electrostatic energy analyser (ESA) makes medium energy ion scattering spectroscopy into a high depth resolution and surface-sensitive version of RBS with less resulting damage effects. This report details the first steps of research in that field of measurement technology using medium energetic backscattered ions detected by means of a semiconductor radiation detector instead of an ESA. The study of medium energy ion scattering (MEIS) has been performed using the 40 keV industrial ion implanter established at GNS Sciences remodelled with supplementary high voltage insulation for the ion source in order to apply voltages up to 45 kV, extra apertures installed in the beamline and sample chamber in order to set the beam diameter accurately, and a semiconductor radiation detector. For measurement purposes a beam of positive charged helium ions accelerated to an energy of about 80 keV has been used impinging onto target surfaces of lead implanted into silicon (PbSi), scandium implanted into aluminium (ScAl), aluminium foil (Al) and glassy carbon (C). First results show that it is possible to use the upgraded industrial implanter for medium energy ion scattering. The beam of 4 He 2+ with an energy up to 88 keV has been focussed to 1 mm in diameter. The 5 nA ion beam hit the samples under 2 x 10 -8 mbar. The results using the surface barrier detector show scattering events from the samples. Cooling of the detector to liquid nitrogen temperatures reduced the electronic noise in the backscattering spectrum close to zero. A

  7. Ion irradiation of CH4-containing icy mixtures

    Baratta, G.A.; Domingo, M.; Ferini, G.; Leto, G.; Palumbo, M.E.; Satorre, M.A.; Strazzulla, G.

    2003-01-01

    We have studied by infrared absorption spectroscopy the effects of ion irradiation with 60 keV Ar 2+ ions on pure methane (CH 4 ) ice at 12 K and mixtures with water (H 2 O) and nitrogen (N 2 ). Ion irradiation, among other effects, causes the rupture of original molecular bonds and the formation of molecular species not present in the initial ice. Here we present the experimental results and discuss their astrophysical relevance

  8. Heavy ion irradiation induces autophagy in irradiated C2C12 myoblasts and their bystander cells

    Hino, Mizuki; Tajika, Yuki; Hamada, Nobuyuki

    2010-01-01

    Autophagy is one of the major processes involved in the degradation of intracellular materials. Here, we examined the potential impact of heavy ion irradiation on the induction of autophagy in irradiated C2C12 mouse myoblasts and their non-targeted bystander cells. In irradiated cells, ultrastructural analysis revealed the accumulation of autophagic structures at various stages of autophagy (id est (i.e.) phagophores, autophagosomes and autolysosomes) within 20 min after irradiation. Multivesicular bodies (MVBs) and autolysosomes containing MVBs (amphisomes) were also observed. Heavy ion irradiation increased the staining of microtubule-associated protein 1 light chain 3 and LysoTracker Red (LTR). Such enhanced staining was suppressed by an autophagy inhibitor 3-methyladenine. In addition to irradiated cells, bystander cells were also positive with LTR staining. Altogether, these results suggest that heavy ion irradiation induces autophagy not only in irradiated myoblasts but also in their bystander cells. (author)

  9. Low energy He+ irradiation effect on graphite surface

    Asari, E.; Nakamura, K.G.; Kitajima, M.; Kawabe, T.

    1992-01-01

    Study on the lattice disordering and the secondary electron emission under low energy (1-5keV) He + irradiation is reported. Real-time Raman measurements show that difference in the observed Raman spectra for different ion energies is due to the difference of the damage depth. The relation between the observed Raman spectrum and the depth profile of lattice damage is discussed. Energy dependence of the secondary electron emission coefficient are also described. (author)

  10. The influence of fractionation on cell survival and premature differentiation after carbon ion irradiation

    Wang Jufang; Li Renming; Guo Chuanling; Fournier, C.; K-Weyrather, W.

    2008-01-01

    To investigate the influence of fractionation on cell survival and radiation induced premature differentiation as markers for early and late effects after X-rays and carbon irradiation. Normal human fibroblasts NHDF, AG1522B and WI-38 were irradiated with 250 kV X-rays, or 266 MeV/u, 195 MeV/u and 11 MeV/u carbon ions. Cytotoxicity was measured by a clonogenic survival assay or by determination of the differentiation pattern. Experiments with high-energy carbon ions show that fractionation induced repair effects are similar to photon irradiation. The relative biological effective (RBE) 10 values for clonogenic survival are 1.3 and 1.6 for irradiation in one or two fractions for NHDF cells and around 1.2 for AG1522B cells regardless of the fractionation scheme. The RBE for a doubling of post mitotic fibroblasts (PMF) in the population is 1 for both single and two fractionated irradiation of NHDF cells. Using 11 MeV/u carbon ions, no repair effect can be seen in WI-38 cells. The RBE 10 for clonogenic survival is 3.2 for single irradiation and 4.9 for two fractionated irradiations. The RBE for a doubling of PMF is 3.1 and 5.0 for single and two fractionated irradiations, respectively. For both cell lines the effects of high-energy carbon ions representing the irradiation of the skin and the normal tissue in the entrance channel are similar to the effects of X-rays. The fractionation effects are maintained. For the lower energy, which is representative for the irradiation of the tumor region, RBE is enhanced for clonogenic survival as well as for premature terminal differentiation. Fractionation effects are not detectable. Consequently, the therapeutic ratio is significantly enhanced by fractionated irradiation with carbon ions. (author)

  11. Dual ion beam irradiation system for in situ observation with electron microscope

    Tsukamoto, Tetuo; Hojou, Kiiti; Furuno, Sigemi; Otsu, Hitosi; Izui, Kazuhiko.

    1993-01-01

    We have developed a new in situ observation system for dynamic processes under dual ion beam irradiation. The system consists of a modified 400 keV analytical electron microscope (JEOL, JEM-4000FX) and two 40 kV ion beam accelerators. This system allows evaluation of microscopic changes of structure and chemical bonding state of materials in the dynamic processes under two kinds of ion beam irradiations, that is required for the simulation test of the first wall of nuclear fusion reactors onto which He + , H + , and H 2 + ions are irradiated simultaneously. These two ion accelerators were equipped symmetrically both sides of the electron microscope and individually controlled. Each ion beam extracted from a duo-plasmatron ion gun is bent downward by an angle of 30deg with a mass-separating magnet, and introduced into specimen chamber of the electron microscope. Inside the specimen chamber the beam is deflected again by an angle of 30deg with an electrostatic prism so as to be incident on the specimen surface. Finally, two ion beams from both side are incident on the specimen surface at an angle of 60deg. The maximum ion current density of helium is more than 250μA/cm 2 at the specimen at an ion energy of 17 keV. Images of the electron microscope during dual ion beam irradiation are observed through a TV camera and recorded with a VTR. (author)

  12. Effect of ion irradiation on the surface, structural and mechanical properties of brass

    Ahmad, Shahbaz; Bashir, Shazia; Ali, Nisar; Umm-i-Kalsoom; Yousaf, Daniel; Faizan-ul-Haq; Naeem, Athar; Ahmad, Riaz; Khlaeeq-ur-Rahman, M.

    2014-04-01

    Modifications to the surface, structural and mechanical properties of brass after ion irradiation have been investigated. Brass targets were bombarded by carbon ions of 2 MeV energy from a Pelletron linear accelerator for various fluences ranging from 56 × 1012 to 26 × 1013 ions/cm2. A scanning electron microscope and X-ray diffractometer were utilized to analyze the surface morphology and crystallographic structure respectively. To explore the mechanical properties e.g., yield stress, ultimate tensile strength and microhardness of irradiated brass, an universal tensile testing machine and Vickers microhardness tester were used. Scanning electron microscopy results revealed an irregular and randomly distributed sputter morphology for a lower ion fluence. With increasing ion fluence, the incoherently shaped structures were transformed into dendritic structures. Nano/micro sized craters and voids, along with the appearance of pits, were observed at the maximum ion fluence. From X-ray diffraction results, no new phases were observed to be formed in the brass upon irradiation. However, a change in the peak intensity and higher and lower angle shifting were observed, which represents the generation of ion-induced defects and stresses. Analyses confirmed modifications in the mechanical properties of irradiated brass. The yield stress, ultimate tensile strength and hardness initially decreased and then increased with increasing ion fluence. The changes in the mechanical properties of irradiated brass are well correlated with surface and crystallographic modifications and are attributed to the generation, augmentation, recombination and annihilation of the ion-induced defects.

  13. Formation of tungsten oxide nanowires by ion irradiation and vacuum annealing

    Zheng, Xu-Dong; Ren, Feng; Wu, Heng-Yi; Qin, Wen-Jing; Jiang, Chang-Zhong

    2018-04-01

    Here we reported the fabrication of tungsten oxide (WO3-x ) nanowires by Ar+ ion irradiation of WO3 thin films followed by annealing in vacuum. The nanowire length increases with increasing irradiation fluence and with decreasing ion energy. We propose that the stress-driven diffusion of the irradiation-induced W interstitial atoms is responsible for the formation of the nanowires. Comparing to the pristine film, the fabricated nanowire film shows a 106-fold enhancement in electrical conductivity, resulting from the high-density irradiation-induced vacancies on the oxygen sublattice. The nanostructure exhibits largely enhanced surface-enhanced Raman scattering effect due to the oxygen vacancy. Thus, ion irradiation provides a powerful approach for fabricating and tailoring the surface nanostructures of semiconductors.

  14. Effects of ion irradiation on the mechanical properties of several polymers

    Sasuga, Tsuneo; Kawanishi, Shunichi; Nishi, Masanobu; Seguchi, Tadao

    1991-01-01

    The effects of high-energy ion irradiation on the tensile properties of polymers were studied under conditions in which ions should pass completely through the specimen and the results were compared with 2 MeV electron irradiation effects. Experiments were carried out on polymers having various constituents and molecular structures, i.e. eight aliphatic polymers and four aromatic polymers. In the aliphatic polymers studied there was scarcely any difference in the dose dependence of the tensile strength and ultimate elongation between proton and electron irradiation. In the aromatic polymers, however, the decrements in the tensile strength and ultimate elongation vs proton dose were less than those for electron irradiation. In heavy-ion irradiation, the radiation damage of PE (an aliphatic polymer) decreased with increase of LET, but no obvious LET effects were observed in PES (an aromatic polymer). (author)

  15. Distribution of products in polymer materials induced by ion-beam irradiation

    Sugimoto, Masaki; Kudoh, Hisaaki; Sasuga, Tsuneo; Seguchi, Tadao [Japan Atomic Energy Research Inst., Tokyo (Japan); Hama, Yoshimasa; Hamanaka, Ken-ichi; Matsumoto, Hideya

    1997-03-01

    The depth profile of double bond formed in low density polyethylene (LDPE) sheet by ion beams irradiation was observed by a micro FT-IR spectrometer in order to investigate the linear energy transfer (LET) dependency on radiation effects to polymer materials. The distribution of double bond formation in LDPE by irradiation of light ions as H+ was found to be same with the dose distribution calculated from TRIM code, and the yield was also same with that by gamma-rays irradiation, which means that the LET dependency is very small. However, the distribution of double bond to depth was much different from the calculated depth-dose in heavy ions irradiation as Ar and Kr. Then, the dose evaluation was difficult from the TRIM code calculation for heavy ions. (author)

  16. Effects of H-implantation energy on the optical stability of implanted usher films under photo-irradiation

    Awazu, K.; Yasui, H.; Kasamori, M.; Ichikawa, T.; Funada, Y.; Iwaki, M.

    1999-01-01

    A study has been made on the improvement of the optical stability of urushi films under optical irradiation using ion implantation. Ion implantation of hydrogen ions in urushi films was performed with a dose of 10 15 ions/cm 2 at ion energies ranging from 0.2 to 150 keV at room temperature. The photo-irradiation onto the urushi films was carried out at irradiation energies ranging from 40 to 400 MJ/m 2 . H-implantation onto urushi films is useful for improving the optical stability under photo-irradiation when the implantation energy is larger than 60 keV

  17. Energetic Ion and Electron Irradiation of the Icy Galilean Satellites

    Cooper, John F.; Johnson, Robert E.; Mauk, Barry H.; Garrett, Henry B.; Gehrels, Neil

    2001-01-01

    Galileo Orbiter measurements of energetic ions (20 keV to 100 MeV) and electrons (20-700 keV) in Jupiter's magnetosphere are used, in conjunction with the JPL electron model (less than 40 MeV), to compute irradiation effects in the surface layers of Europa, Ganymede, and Callisto. Significant elemental modifications are produced on unshielded surfaces to approximately centimeter depths in times of less than or equal to 10(exp 6) years, whereas micrometer depths on Europa are fully processed in approximately 10 years. Most observations of surface composition are limited to optical depths of approximately 1 mm, which are indirect contact with the space environment. Incident flux modeling includes Stormer deflection by the Ganymede dipole magnetic field, likely variable over that satellite's irradiation history. Delivered energy flux of approximately 8 x 10(exp 10) keV/square cm-s at Europa is comparable to total internal heat flux in the same units from tidal and radiogenic sources, while exceeding that for solar UV energies (greater than 6 eV) relevant to ice chemistry. Particle energy fluxes to Ganymede's equator and Callisto are similar at approximately 2-3 x 10(exp 8) keV/square cm-s with 5 x 10(exp 9) at Ganymede's polar cap, the latter being comparable to radiogenic energy input. Rates of change in optical reflectance and molecular composition on Europa, and on Ganymede's polar cap, are strongly driven by energy from irradiation, even in relatively young regions. Irradiation of nonice materials can produce SO2 and CO2, detected on Callisto and Europa, and simple to complex hydrocarbons. Iogenic neutral atoms and meteoroids deliver negligible energy approximately 10(exp 4-5) keV/square cm-s but impacts of the latter are important for burial or removal of irradiation products. Downward transport of radiation produced oxidants and hydrocarbons could deliver significant chemical energy into the satellite interiors for astrobiological evolution in putative sub

  18. An ion beam deceleration lens for ultra-low-energy ion bombardment of naked DNA

    Thopan, P.; Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuldyuld@gmail.com [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2013-07-15

    Highlights: ► An ion beam deceleration lens was designed and constructed. ► The deceleration lens was installed and tested. ► The decelerated ion beam energy was measured using an electrical field. ► Decelerated ultra-low-energy ion beam bombarded naked DNA. ► Ion beam with energy of a few tens of eV could break DNA strands. -- Abstract: Study of low-energy ion bombardment effect on biological living materials is of significance. High-energy ion beam irradiation of biological materials such as organs and cells has no doubt biological effects. However, ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range. To investigate effects from very-low-energy ion bombardment on biological materials, an ion beam deceleration lens is necessary for uniform ion energy lower than keV. A deceleration lens was designed and constructed based on study of the beam optics using the SIMION program. The lens consisted of six electrodes, able to focus and decelerate primary ion beam, with the last one being a long tube to obtain a parallel uniform exiting beam. The deceleration lens was installed to our 30-kV bioengineering-specialized ion beam line. The final decelerated-ion energy was measured using a simple electrostatic field to bend the beam to range from 10 eV to 1 keV controlled by the lens parameters and the primary beam condition. In a preliminary test, nitrogen ion beam at 60 eV decelerated from a primary 20-keV beam bombarded naked plasmid DNA. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks. The study demonstrated that the ion bombardment with energy as low as several-tens eV was possible to break DNA strands and thus potential to cause genetic modification of biological cells.

  19. An ion beam deceleration lens for ultra-low-energy ion bombardment of naked DNA

    Thopan, P.; Prakrajang, K.; Thongkumkoon, P.; Suwannakachorn, D.; Yu, L.D.

    2013-01-01

    Highlights: ► An ion beam deceleration lens was designed and constructed. ► The deceleration lens was installed and tested. ► The decelerated ion beam energy was measured using an electrical field. ► Decelerated ultra-low-energy ion beam bombarded naked DNA. ► Ion beam with energy of a few tens of eV could break DNA strands. -- Abstract: Study of low-energy ion bombardment effect on biological living materials is of significance. High-energy ion beam irradiation of biological materials such as organs and cells has no doubt biological effects. However, ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range. To investigate effects from very-low-energy ion bombardment on biological materials, an ion beam deceleration lens is necessary for uniform ion energy lower than keV. A deceleration lens was designed and constructed based on study of the beam optics using the SIMION program. The lens consisted of six electrodes, able to focus and decelerate primary ion beam, with the last one being a long tube to obtain a parallel uniform exiting beam. The deceleration lens was installed to our 30-kV bioengineering-specialized ion beam line. The final decelerated-ion energy was measured using a simple electrostatic field to bend the beam to range from 10 eV to 1 keV controlled by the lens parameters and the primary beam condition. In a preliminary test, nitrogen ion beam at 60 eV decelerated from a primary 20-keV beam bombarded naked plasmid DNA. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks. The study demonstrated that the ion bombardment with energy as low as several-tens eV was possible to break DNA strands and thus potential to cause genetic modification of biological cells

  20. Stereophotogrammetric study of surface topography in ion irradiated silver

    Sokolov, V.N.; Fayazov, I.M.

    1993-01-01

    The irradiated surface topography of polycrystalline silver was studied using the stereophotogrammetric method. The surface of silver was irradiated with 30 keV argon ions at variation for the ion incidence angle in interval of 0-80 deg relative to a surface normal. The influence of the inclination angle of the sample in the SEM on the cone shape of a SEM-picture of the irradiated surface is discussed. The parameters of cones on the irradiated surface of silver were measured by the SEM-stereomethod. The measurements of the sample section perpendicular to the incidence plane are also carried out

  1. Irradiation of tungsten with metallic diatomic molecular ions: atomic-resolution observations of depleted zones

    Pramanik, D.; Seidman, D.N.

    1982-08-01

    Direct evidence, on an atomic scale, is presented for the enhancement of damage production per projectile ion in diatomic metallic molecular ion (dimer) irradiations of tungsten as compared to monatomic metallic ion (monomer) irradiations. Irradiations were performed in situ at less than or equal to 10 K, in a field-ion microscope, employing 20 keV Ag + or W + monomer ions and the results are compared with 40 keV W 2 + or Ag 2 + dimer ion bombardments; the average energy per ion was 20 keV. First, in the near-surface region the depleted zones produced by the W 2 + dimer ions give rise to void-like contrast effects. The W + monomer ions do not produce this void-like damage. The existence of voids was explained employing a nucleation and diffusion-limited growth model which suggests that the growth can occur on a time scale -9 s, if the effective diffusivity of an atom in the fully-developed collision cascade is > 3 x 10 -4 cm 2 s -1 . Second, by counting the number of vacancies in individual depleted zones, produced by the different ions, it was demonstrated that the number of vacancies produced per incoming ion of the dimer is 1.55 times greater than the number of vacancies produced per monomer ion

  2. Damage of copper by low energy xenon ions

    Babad-Zakhryapin, A.A.; Popenko, V.A.

    1988-01-01

    Changes in the copper crystal structure bombarded by xenon ions with 30-150 eV energy are studied. Foils of MOb copper mark, 10 mm in diameter and 100 μm thickness, are irradiated. The initial specimens are annealed in vacuum during 1 h at 900 K temperature. The specimens are bombarded by xenon ions in a water-cooled holder. A TE-O type accelerator serves as a xenon ion source. The ion energy varies within 30 to 150 eV range. The ion flux density is 8x10 16 ion/(cm 2 xs). It is shown that crystal structure variations at deep depths are observed not only at high (>1 keV), but at low ion energies down to several dozens of electronvolt as well. The crystal structure variation on copper irradiation by xenon ions with 30-150 eV energy is followed by formation of defects like dislocation loops, point defects in the irradiated target bulk

  3. Modification of the bulk properties of the porous poly(lactide-co-glycolide) scaffold by irradiation with a cyclotron ion beam with high energy for its application in tissue engineering

    Woo, Jung Hoon; Kim, Do Yeon; Jo, Seong Yeun; Kang, Hyunki; Noh, Insup

    2009-01-01

    Understanding the bulk properties of a prefabricated scaffold for handling and degradation during cell culture may be advantageous to its application in tissue engineering. Modification of the bulk properties of the porous poly(lactide-co-glycolide) (PLGA) scaffold was performed by irradiation with a high energy cyclotron proton ion beam. The porous PLGA scaffolds were fabricated in advance by the gas-foaming method by employing ammonium bicarbonate particles as porogens. Irradiation with ion beams was performed with 40 MeV for 3, 6 and 9 min on the scaffolds at a distance of 30 cm from the beam exit to the scaffold surface. The bulk area of the ion beam-treated PLGA scaffold apparently demonstrated no color changes when observed with a digital camera. The chemical structures of the untreated samples seemed to be kept well when analyzed by both Fourier transformed infrared but a subtle change was observed in its x-ray photoelectron spectroscopy. The results of in vitro tissue culture with smooth muscle cells for up to 4 weeks also demonstrated no significant difference in terms of its handling stability during cell culture and cellular behavior between the untreated PLGA scaffolds and the ion beam-treated ones. However, significant changes were observed in its molecular weight as measured by gel permeation chromatography, indicating a significant reduction of its molecular weights. These results of in vitro tests and GPC measurements indicated that while bulk modification of the scaffold was processed, its handling was stable during in vitro cell culture for up to 4 weeks.

  4. Modification of the bulk properties of the porous poly(lactide-co-glycolide) scaffold by irradiation with a cyclotron ion beam with high energy for its application in tissue engineering

    Woo, Jung Hoon; Kim, Do Yeon; Jo, Seong Yeun; Kang, Hyunki; Noh, Insup, E-mail: insup@snut.ac.k [Department of Chemical Engineering, Seoul National University of Technology, 172 Gongnung 2-dong, Nowon-gu, Seoul 139-743 (Korea, Republic of)

    2009-08-15

    Understanding the bulk properties of a prefabricated scaffold for handling and degradation during cell culture may be advantageous to its application in tissue engineering. Modification of the bulk properties of the porous poly(lactide-co-glycolide) (PLGA) scaffold was performed by irradiation with a high energy cyclotron proton ion beam. The porous PLGA scaffolds were fabricated in advance by the gas-foaming method by employing ammonium bicarbonate particles as porogens. Irradiation with ion beams was performed with 40 MeV for 3, 6 and 9 min on the scaffolds at a distance of 30 cm from the beam exit to the scaffold surface. The bulk area of the ion beam-treated PLGA scaffold apparently demonstrated no color changes when observed with a digital camera. The chemical structures of the untreated samples seemed to be kept well when analyzed by both Fourier transformed infrared but a subtle change was observed in its x-ray photoelectron spectroscopy. The results of in vitro tissue culture with smooth muscle cells for up to 4 weeks also demonstrated no significant difference in terms of its handling stability during cell culture and cellular behavior between the untreated PLGA scaffolds and the ion beam-treated ones. However, significant changes were observed in its molecular weight as measured by gel permeation chromatography, indicating a significant reduction of its molecular weights. These results of in vitro tests and GPC measurements indicated that while bulk modification of the scaffold was processed, its handling was stable during in vitro cell culture for up to 4 weeks.

  5. Surface modifications of polypropylene by high energy carbon ions

    Saha, A.; Chakraborty, V.; Dutta, R.K.; Chintalapudi, S.N.

    2000-01-01

    Polypropylene was irradiated with 12 C ions of 3.6 and 5.4 MeV energies using 3 MV tandem accelerator. The surface modification was investigated by Scanning Electron Microscopy (SEM). Optical changes were monitored by UV-VIS and FTIR spectroscopy. At the lowest ion fluence, only blister formation of various sizes (1-6 μm) was observed. Polymer when irradiated at a fluence of 1x10 14 ions/cm 2 exhibited a network structure. A comparative study on dose dependence of surface and bulk modification has been described. (author)

  6. Effect of helium on swelling and microstructural evolution in ion-irradiated V-15Cr-5Ti alloy

    Loomis, B.A.; Kestel, B.J.; Gerber, S.B.; Ayrault, G.

    1986-03-01

    An investigation was made on the effects of implanted helium on the swelling and microstructural evolution that results from energetic single- and dual-ion irradiation of the V-15Cr-5Ti alloy. Single-ion irradiations were utilized for a simulated production of the irradiation damage that might be expected from neutron irradiation of the alloy in a reactor with a fast neutron energy spectrum (E > 0.1 MeV). Dual-ion irradiations were utilized for a simulated production of the simultaneous creation of helium atoms and irradiation damage in the alloy in the MFR environment. Experimental results are also presented on the radiation-induced segregation of the constituent atoms in the single- and dual-ion irradiated alloy

  7. Enhanced electrochemical etching of ion irradiated silicon by localized amorphization

    Dang, Z. Y.; Breese, M. B. H. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore Singapore 117542 (Singapore); Lin, Y.; Tok, E. S. [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Vittone, E. [Physics Department, NIS Excellence Centre and CNISM, University of Torino, via Pietro Giuria 1, 10125 Torino (Italy)

    2014-05-12

    A tailored distribution of ion induced defects in p-type silicon allows subsequent electrochemical anodization to be modified in various ways. Here we describe how a low level of lattice amorphization induced by ion irradiation influences anodization. First, it superposes a chemical etching effect, which is observable at high fluences as a reduced height of a micromachined component. Second, at lower fluences, it greatly enhances electrochemical anodization by allowing a hole diffusion current to flow to the exposed surface. We present an anodization model, which explains all observed effects produced by light ions such as helium and heavy ions such as cesium over a wide range of fluences and irradiation geometries.

  8. Phenomenological understanding of dewetting and embedding of noble metal nanoparticles in thin films induced by ion irradiation

    Prakash, Jai, E-mail: jai.gupta1983@gmail.com [Department of Chemistry, MMH College (Ch. Charan Singh University Meerut), Ghaiziabad 201001 (India); Chemical Physics of Materials, Université Libre de Bruxelles, Campus de la Plaine, CP 243, B-1050 Bruxelles (Belgium); Tripathi, A. [Inter University Accelerator Centre, Aruna Asif Ali Marg, New Delhi 110067 (India); Gautam, Sanjeev; Chae, K.H.; Song, Jonghan [Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 136–791 (Korea, Republic of); Rigato, V. [INFN Laboratori Nazionali di Legnaro, Via Romea. 4, 35020 Legnaro, Padova (Italy); Tripathi, Jalaj [Department of Chemistry, MMH College (Ch. Charan Singh University Meerut), Ghaiziabad 201001 (India); Asokan, K. [Inter University Accelerator Centre, Aruna Asif Ali Marg, New Delhi 110067 (India)

    2014-10-15

    The present experimental work provides the phenomenological approach to understand the dewetting in thin noble metal films with subsequent formation of nanoparticles (NPs) and embedding of NPs induced by ion irradiation. Au/polyethyleneterepthlate (PET) bilayers were irradiated with 150 keV Ar ions at varying fluences and were studied using scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (X-TEM). Thin Au film begins to dewet from the substrate after irradiation and subsequent irradiation results in spherical nanoparticles on the surface that at a fluence of 5 × 10{sup 16} ions/cm{sup 2} become embedded into the substrate. In addition to dewetting in thin films, synthesis and embedding of metal NPs by ion irradiation, the present article explores fundamental thermodynamic principles that govern these events systematically under the effect of irradiation. The results are explained on the basis of ion induced sputtering, thermal spike inducing local melting and of thermodynamic driving forces by minimization of the system free energy where contributions of surface and interfacial energies are considered with subsequent ion induced viscous flow in substrate. - Highlights: • Phenomenological interpretation of dewetting and embedding of metal NPs in thin film. • Exploring fundamental thermodynamic principles under influence of ion irradiation. • Ion induced surface/interface microstructural changes using SEM/X-TEM. • Ion induced sputtering, thermal spike induced local melting. • Thermodynamic driving forces relate to surface and interfacial energies.

  9. Metal ion protection of DNA to fast neutron irradiation

    Constantinescu, B.; Bugoi, R.; Radulescu, I.; Radu, L.

    1998-01-01

    The most important effects of the ionising radiation are the single and double strand breaks (SSB and DBS), modifications of the DNA bases and deoxyribose, as well as the occurrence of alkali and heat labile sites (revealed as strand breaks after alkaline or thermic treatment of irradiated DNA). The ionising particles can have either direct effects on the DNA constituents or indirect effects, mediated by the OH - radicals, produced by water radiolysis. The occurrence of SSB and DSB in the chromatin DNA strands is supposed to hinder the DNA-dye complex formation. Usually, the dyes present different fluorescence parameters in the two possible states, so one can correlate the lifetime or the quantum yield with the extent of the damage. We took into account the protective effect offered both by histones, which behave as 'scavenger molecules' for OH - radicals and by the high compactness of DNA chromatin. Similar protective effects might be the results of the metallic ion addition which triggers some conformational transitions of the chromatin DNA towards a highly compacted structure. In this paper we present a study of the complexes of fast neutron irradiated chromatin with proflavine. Fluorimetric and time resolved spectroscopic determinations (single photon counting method) of chromatin-Pr complexes were realised. Information regarding the chromatin protein damage were obtained by monitoring the fluorescence of Trp. The chromatin was irradiated (20-100 Gy) with fast neutrons, obtained by the reaction of 13.5 MeV deuterons on a thick beryllium target at the IFIN-HH U-120 Cyclotron. The dose mean lineal energy in water at the point of interest was 50 keV/m and the mean dose rate was 1.5 Gy/min. By fluorescence determinations, changes of the Pr intercalation parameters in fast neutron irradiated chromatin DNA have been observed. Fluorescence techniques provide valuable information on the binding equilibrium by considering the radiation deexcitation of the complex. The

  10. The sputtering of the deformed gold under irradiation with krypton swift heavy ions

    Didyk, A.Yu.; Semina, V.K.; Hofman, A.

    2002-01-01

    The results about sputtering yield of gold irradiated by 86 Kr ions with high inelastic energy losses up to a fluence of 10 14 ion/cm 2 are presented. It was shown that the sputtering (evaporation) yield strongly depends on the initial defect concentration in gold. The sputtering yield begins to grow very strongly with the increasing of damage created by heavy ion elastic and inelastic energy losses. The temperature on the surface in the area around krypton ion trajectory is much higher than the melting and evaporation temperatures for gold as follows from calculations with the various expressions and models

  11. Synthesis of Fe–C{sub 60} complex by ion irradiation

    Minezaki, Hidekazu, E-mail: dn1000012@toyo.jp [Graduate School of Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan); Oshima, Kosuke [Graduate School of Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan); Uchida, Takashi; Mizuki, Toru [Bio-Nano Electronics Research Centre, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan); Racz, Richard [Institute of Nuclear Research (ATOMKI), H-4026, Debrecen, Bem tér 18/C (Hungary); Muramatsu, Masayuki [National Institute of Radiological Sciences (NIRS), 4-9-1 Anagawa, Inage-ku, Chiba-shi, Chiba 263-8555 (Japan); Asaji, Toyohisa [Oshima National College of Maritime Technology, 1091-1 Komatsu Suou Oshima City, Oshima, Yamaguchi 742-2193 (Japan); Kitagawa, Atsushi [National Institute of Radiological Sciences (NIRS), 4-9-1 Anagawa, Inage-ku, Chiba-shi, Chiba 263-8555 (Japan); Kato, Yushi [Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita-shi, Osaka 565-0871 (Japan); Biri, Sandor [Institute of Nuclear Research (ATOMKI), H-4026, Debrecen, Bem tér 18/C (Hungary); Yoshida, Yoshikazu [Graduate School of Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan); Bio-Nano Electronics Research Centre, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan)

    2013-09-01

    Highlights: •The Fe{sup +} beam was irradiated to the C{sub 60} thin films. •The Fe{sup +}-irradiated C{sub 60} thin films were analyzed by LDI-TOF-MS and by HPLC. •The peak with mass/charge of 776 was observed in the Fe{sup +}-irradiated C{sub 60} thin film. •We could synthesize the Fe–C{sub 60} complex as a new material. -- Abstract: In order to synthesize the Fe@C{sub 60} complex, iron ion beam irradiated to C{sub 60} thin films. The energy of the irradiated iron ions was controlled from 50 eV to 250 eV. The dose of that was controlled from 6.67 × 10{sup 12} to 6.67 × 10{sup 14} ions/cm{sup 2}. By the analysis of the surface of the iron ion irradiated C{sub 60} thin films using laser desorption/ionization time-of-flight mass spectrometry, we could confirm the peak with mass/charge of 776. The mass/charge of 776 corresponds to Fe + C{sub 60}. We obtained the maximum intensity of the peak with mass/charge of 776 under the irradiation iron ion energy and the dose were 50 eV and 3.30 × 10{sup 13} ions/cm{sup 2}, respectively. Then, the separation of the material with mass of 776 was performed by using high performance liquid chromatography. We could separate the Fe + C{sub 60} from the iron ion irradiated C{sub 60} thin film. As a result, we could synthesize the Fe + C{sub 60} complex as a new material.

  12. High-fluence hyperthermal ion irradiation of gallium nitride surfaces at elevated temperatures

    Finzel, A.; Gerlach, J.W., E-mail: juergen.gerlach@iom-leipzig.de; Lorbeer, J.; Frost, F.; Rauschenbach, B.

    2014-10-30

    Highlights: • Irradiation of gallium nitride films with hyperthermal nitrogen ions. • Surface roughening at elevated sample temperatures was observed. • No thermal decomposition of gallium nitride films during irradiation. • Asymmetric surface diffusion processes cause local roughening. - Abstract: Wurtzitic GaN films deposited on 6H-SiC(0001) substrates by ion-beam assisted molecular-beam epitaxy were irradiated with hyperthermal nitrogen ions with different fluences at different substrate temperatures. In situ observations with reflection high energy electron diffraction showed that during the irradiation process the surface structure of the GaN films changed from two dimensional to three dimensional at elevated temperatures, but not at room temperature. Atomic force microscopy revealed an enhancement of nanometric holes and canyons upon the ion irradiation at higher temperatures. The roughness of the irradiated and heated GaN films was clearly increased by the ion irradiation in accordance with x-ray reflectivity measurements. A sole thermal decomposition of the films at the chosen temperatures could be excluded. The results are discussed taking into account temperature dependent sputtering and surface uphill adatom diffusion as a function of temperature.

  13. Structural stability of C60 films under irradiation with swift heavy ions

    Jin Yunfan; Yao Cunfeng; Wang Zhiguang; Xie Erqing; Song Yin; Sun Youmei; Zhang Chonghong; Liu Jie; Duan Jinglai

    2005-01-01

    In order to investigate the structural stability of fullerene (C 60 ) under swift heavy ion irradiation, the irradiation experiments of thin C 60 films were performed with 22 MeV/amu Fe 56 ions delivered by HIRFL at Lanzhou in China. The irradiated C 60 films were analyzed by means of Raman scattering and Fourier transform infrared (FTIR) spectroscopes. The analysis results indicated that the damage cross-sections σ of the C 60 molecule deduced from the data of the Raman spectra are between 1.1 and 4.5 x 10 -14 cm 2 for the electronic energy loss from 3.5 to 8.7 keV/nm and electronic energy transfer dominates the damage process of C 60 films. The partial recovery of the damage in irradiated C 60 films at certain electronic energy loss is attributed to an annealing effect of strong electronic excitation

  14. Effect of ion beam irradiation on metal particle doped polymer ...

    and converts polymeric structure into hydrogen depleted carbon network. ... Composite materials; ion beam irradiation; dielectric properties; X-ray diffraction. ..... Coat. Technol. 201 8225. Raja V, Sharma A K and Narasimha V V R 2004 Mater.

  15. Failure Analysis of Heavy-Ion-Irradiated Schottky Diodes

    Casey, Megan C.; Lauenstein, Jean-Marie; Wilcox, Edward P.; Topper, Alyson D.; Campola, Michael J.; Label, Kenneth A.

    2017-01-01

    In this work, we use high- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images to identify and describe the failure locations in heavy-ion-irradiated Schottky diodes.

  16. Swift heavy ion irradiation induced modification of structure and ...

    1Department of Physics, Salipur College, Salipur 754 103, India. 2Department of ... Ion irradiation; nanoparticles; atomic force microscopy; BiFeO3. 1. Introduction .... and to understand their possible origin, a study on power spectral density ...

  17. Large scale silver nanowires network fabricated by MeV hydrogen (H+) ion beam irradiation

    S, Honey; S, Naseem; A, Ishaq; M, Maaza; M T, Bhatti; D, Wan

    2016-01-01

    A random two-dimensional large scale nano-network of silver nanowires (Ag-NWs) is fabricated by MeV hydrogen (H + ) ion beam irradiation. Ag-NWs are irradiated under H +  ion beam at different ion fluences at room temperature. The Ag-NW network is fabricated by H + ion beam-induced welding of Ag-NWs at intersecting positions. H +  ion beam induced welding is confirmed by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Moreover, the structure of Ag NWs remains stable under H +  ion beam, and networks are optically transparent. Morphology also remains stable under H +  ion beam irradiation. No slicings or cuttings of Ag-NWs are observed under MeV H +  ion beam irradiation. The results exhibit that the formation of Ag-NW network proceeds through three steps: ion beam induced thermal spikes lead to the local heating of Ag-NWs, the formation of simple junctions on small scale, and the formation of a large scale network. This observation is useful for using Ag-NWs based devices in upper space where protons are abandoned in an energy range from MeV to GeV. This high-quality Ag-NW network can also be used as a transparent electrode for optoelectronics devices. (paper)

  18. Electrical properties of irradiated PVA film by using ion/electron beam

    Abdelrahman, M. M.; Osman, M.; Hashhash, A.

    2016-02-01

    Ion/electron beam bombardment has shown great potential for improving the surface properties of polymers. Low-energy charged (ion/electron) beam irradiation of polymers is a good technique to modify properties such as electrical conductivity, structural behavior, and their mechanical properties. This paper reports on the effect of nitrogen and electron beam irradiation on the electrical properties of polyvinyl alcohol (PVA) films. PVA films of 4 mm were exposed to a charged (ion/electron) beam for different treatment times (15, 30, and 60 minutes); the beam was produced from a dual beam source using nitrogen gas with the other ion/electron source parameters optimized. The dielectric loss tangent tan δ , electrical conductivity σ , and dielectric constant ɛ ^' } in the frequency range 100 Hz-100 kHz were measured at room temperature. The variation of dielectric constant and loss tangent as a function of frequency was also studied at room temperature. The dielectric constant was found to be strongly dependent on frequency for both ion and electron beam irradiation doses. The real (ɛ ^' }) and imaginary (ɛ ^' ' }) parts of the dielectric constant decreased with frequency for all irradiated and non-irradiated samples. The AC conductivity showed an increase with frequency for all samples under the influence of both ion and electron irradiation for different times. Photoluminescence (PL) spectral changes were also studied. The formation of clusters and defects (which serve as non-radiative centers on the polymer surface) is confirmed by the decrease in the PL intensity.

  19. TEM study of damage recovery in SiC by swift Xe ion irradiation

    Skuratov, V.A., E-mail: skuratov@jinr.ru [Joint Institute for Nuclear Research, Dubna (Russian Federation); O’Connell, J. [Centre for HRTEM, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Sohatsky, A.S. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Neethling, J. [Centre for HRTEM, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2014-05-01

    The microstructure of 4H–SiC samples subsequently irradiated with low energy He (10 keV), Ti (220 keV) and high energy (167 MeV) Xe ions has been studied using cross-sectional transmission electron microscopy. It was found that xenon ions with fluences above 10{sup 13} cm{sup −2} restore crystallinity in a heavily damaged partially amorphous zone. No, or negligible damage recovery is observed in fully amorphized layers of silicon carbide.

  20. TEM study of damage recovery in SiC by swift Xe ion irradiation

    Skuratov, V.A.; O’Connell, J.; Sohatsky, A.S.; Neethling, J.

    2014-01-01

    The microstructure of 4H–SiC samples subsequently irradiated with low energy He (10 keV), Ti (220 keV) and high energy (167 MeV) Xe ions has been studied using cross-sectional transmission electron microscopy. It was found that xenon ions with fluences above 10 13 cm −2 restore crystallinity in a heavily damaged partially amorphous zone. No, or negligible damage recovery is observed in fully amorphized layers of silicon carbide

  1. Effect of ion irradiation on the surface, structural and mechanical properties of brass

    Ahmad, Shahbaz; Bashir, Shazia, E-mail: shaziabashir@gcu.edu.pk; Ali, Nisar; Umm-i-Kalsoom,; Yousaf, Daniel; Faizan-ul-Haq,; Naeem, Athar; Ahmad, Riaz; Khlaeeq-ur-Rahman, M.

    2014-04-01

    Highlights: • Brass targets were exposed to carbon ions of energy 2 MeV. • The effect of ion dose has been investigated. • The surface morphology is investigated by SEM analysis. • XRD analysis is performed to reveal structural modification. • Mechanical properties were investigated by tensile testing and microhardness testing. - Abstract: Modifications to the surface, structural and mechanical properties of brass after ion irradiation have been investigated. Brass targets were bombarded by carbon ions of 2 MeV energy from a Pelletron linear accelerator for various fluences ranging from 56 × 10{sup 12} to 26 × 10{sup 13} ions/cm{sup 2}. A scanning electron microscope and X-ray diffractometer were utilized to analyze the surface morphology and crystallographic structure respectively. To explore the mechanical properties e.g., yield stress, ultimate tensile strength and microhardness of irradiated brass, an universal tensile testing machine and Vickers microhardness tester were used. Scanning electron microscopy results revealed an irregular and randomly distributed sputter morphology for a lower ion fluence. With increasing ion fluence, the incoherently shaped structures were transformed into dendritic structures. Nano/micro sized craters and voids, along with the appearance of pits, were observed at the maximum ion fluence. From X-ray diffraction results, no new phases were observed to be formed in the brass upon irradiation. However, a change in the peak intensity and higher and lower angle shifting were observed, which represents the generation of ion-induced defects and stresses. Analyses confirmed modifications in the mechanical properties of irradiated brass. The yield stress, ultimate tensile strength and hardness initially decreased and then increased with increasing ion fluence. The changes in the mechanical properties of irradiated brass are well correlated with surface and crystallographic modifications and are attributed to the generation

  2. Oxide glass structure evolution under swift heavy ion irradiation

    Mendoza, C.; Peuget, S.; Charpentier, T.; Moskura, M.; Caraballo, R.; Bouty, O.; Mir, A.H.; Monnet, I.; Grygiel, C.; Jegou, C.

    2014-01-01

    Highlights: • Structure of SHI irradiated glass is similar to the one of a hyper quenched glass. • D2 Raman band associated to 3 members ring is only observed in irradiated glass. • Irradiated state seems slightly different to an equilibrated liquid quenched rapidly. - Abstract: The effects of ion tracks on the structure of oxide glasses were examined by irradiating a silica glass and two borosilicate glass specimens containing 3 and 6 oxides with krypton ions (74 MeV) and xenon ions (92 MeV). Structural changes in the glass were observed by Raman and nuclear magnetic resonance spectroscopy using a multinuclear approach ( 11 B, 23 Na, 27 Al and 29 Si). The structure of irradiated silica glass resembles a structure quenched at very high temperature. Both borosilicate glass specimens exhibited depolymerization of the borosilicate network, a lower boron coordination number, and a change in the role of a fraction of the sodium atoms after irradiation, suggesting that the final borosilicate glass structures were quenched from a high temperature state. In addition, a sharp increase in the concentration of three membered silica rings and the presence of large amounts of penta- and hexacoordinate aluminum in the irradiated 6-oxide glass suggest that the irradiated glass is different from a liquid quenched at equilibrium, but it is rather obtained from a nonequilibrium liquid that is partially relaxed by very rapid quenching within the ion tracks

  3. Ceramic coatings by ion irradiation of polycarbosilanes and polysiloxanes. Pt. 1: Conversion mechanism

    Pivin, J.C.; Colombo, P.

    1997-01-01

    Changes of composition and structure of various types of polysiloxanes and polycarbosilanes when submitted to irradiation with ions of increasing mass, were analysed by means of several ion-beam analytical techniques, Raman and Fourier transform-infrared spectroscopes. Ion irradiations is as efficient as annealing at temperatures above 1000 o C for releasing hydrogen from these organic-inorganic polymers, and the radiolytic evolution of hydrogen is selective, whereas methane, silanes and carbon monoxide are also evolved during heat treatments. The kinetics of the polymer conversion into amorphous ceramics depends strongly on the linear density of energy transferred by ions to electron shells of target atoms, according to the ion energy per nucleon and to the nature of the side groups. Some of the carbon atoms segregate in clusters exhibiting a diamond-like hybridization state, in contrast to the clusters of turbostatic graphite formed in pyrolysed films. (Author)

  4. Unlimited Energy Gain in the Laser-Driven Radiation Pressure Dominant Acceleration of Ions

    Bulanov, S. V.; Echkina, E. Yu.; Esirkepov, T. Zh.; Inovenkov, I. N.; Kando, M.; Pegoraro, F.; Korn, G.

    2009-01-01

    The energy of the ions accelerated by an intense electromagnetic wave in the radiation pressure dominated regime can be greatly enhanced due to a transverse expansion of a thin target. The expansion decreases the number of accelerated ions in the irradiated region increasing the energy and the longitudinal velocity of remaining ions. In the relativistic limit, the ions become phase-locked with respect to the electromagnetic wave resulting in the unlimited ion energy gain. This effect and the ...

  5. Magnetic patterning by means of ion irradiation and implantation

    Fassbender, J.; McCord, J.

    2008-01-01

    A pure magnetic patterning by means of ion irradiation which relies on a local modification of the magnetic anisotropy of a magnetic multilayer structure has been first demonstrated in 1998. Since then also other magnetic properties like the interlayer exchange coupling, the exchange bias effect, the magnetic damping behavior and the saturation magnetization to name a few have also been demonstrated to be affected by ion irradiation or ion implantation. Consequently, all these effects can be used if combined with a masking technique or employing direct focused ion beam writing for a magnetic patterning and thus an imprinting of an artificial magnetic domain structure, which subsequently modifies the integral magnetization reversal behavior or the magnetization dynamics of the film investigated. The present review will summarize how ion irradiation and implantation can affect the magnetic properties by means of structural modifications. The main part will cover the present status with respect to the pure magnetic patterning of micro- and nano structures

  6. Ultralow energy ion beam surface modification of low density polyethylene.

    Shenton, Martyn J; Bradley, James W; van den Berg, Jaap A; Armour, David G; Stevens, Gary C

    2005-12-01

    Ultralow energy Ar+ and O+ ion beam irradiation of low density polyethylene has been carried out under controlled dose and monoenergetic conditions. XPS of Ar+-treated surfaces exposed to ambient atmosphere show that the bombardment of 50 eV Ar+ ions at a total dose of 10(16) cm(-2) gives rise to very reactive surfaces with oxygen incorporation at about 50% of the species present in the upper surface layer. Using pure O+ beam irradiation, comparatively low O incorporation is achieved without exposure to atmosphere (approximately 13% O in the upper surface). However, if the surface is activated by Ar+ pretreatment, then large oxygen contents can be achieved under subsequent O+ irradiation (up to 48% O). The results show that for very low energy (20 eV) oxygen ions there is a dose threshold of about 5 x 10(15) cm(-2) before surface oxygen incorporation is observed. It appears that, for both Ar+ and O+ ions in this regime, the degree of surface modification is only very weakly dependent on the ion energy. The results suggest that in the nonequilibrium plasma treatment of polymers, where the ion flux is typically 10(18) m(-2) s(-1), low energy ions (<50 eV) may be responsible for surface chemical modification.

  7. Irradiation effects on c-axis lattice parameter in EuBa{sub 2}Cu{sub 3}O{sub y} irradiated with energetic ions

    Ishikawa, Norito; Chimi, Yasuhiro; Iwase, Akihiro; Maeta, Hiroshi [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; Tsuru, Koji; Michikami, Osamu

    1997-03-01

    We report an irradiation effect on c-axis lattice parameter in EuBa{sub 2}Cu{sub 3}O{sub y} oxide superconductors when irradiated with ions of energy ranging from 0.85 to 200 MeV. For the irradiation with low energy (0.85-2 MeV) ions, the defect production and the resultant c-axis lattice expansion were dominated by elastic collisions. On the other hand, for the irradiation with high energy (120-200 MeV) ions, the change in the c-axis lattice parameter was found to be much greater than that expected from the elastic displacement of target atoms. For high energy ion irradiation we could observe the excessive increase of c-axis lattice parameter reflecting additional production of defects which can be attributed to the electronic excitation. The large increase in c-axis lattice parameter due to high energy ion irradiation should be taken into account for the study on the interaction between vortices and irradiation-induced defects. (author)

  8. ECR ion source based low energy ion beam facility

    Mass analyzed highly charged ion beams of energy ranging from a few keV to a few MeV plays an important role in various aspects of research in modern physics. In this paper a unique low energy ion beam facility (LEIBF) set up at Nuclear Science Centre (NSC) for providing low and medium energy multiply charged ion ...

  9. Secondary particle tracks generated by ion beam irradiation

    García, Gustavo

    2015-05-01

    The Low Energy Particle Track Simulation (LEPTS) procedure is a powerful complementary tool to include the effect of low energy electrons and positrons in medical applications of radiation. In particular, for ion-beam cancer treatments provides a detailed description of the role of the secondary electrons abundantly generated around the Bragg peak as well as the possibility of using transmuted positron emitters (C11, O15) as a complement for ion-beam dosimetry. In this study we present interaction probability data derived from IAM-SCAR corrective factors for liquid environments. Using these data, single electron and positron tracks in liquid water and pyrimidine have been simulated providing information about energy deposition as well as the number and type of interactions taking place in any selected ``nanovolume'' of the irradiated area. In collaboration with Francisco Blanco, Universidad Complutense de Madrid; Antonio Mu noz, Centro de Investigaciones Energéticas Medioambientales y Tecnológicas and Diogo Almeida, Filipe Ferreira da Silva, Paulo Lim ao-Vieira, Universidade Nova de Lisboa. Supported by the Spanish and Portuguese governments.

  10. Evaluation of cell behavior on modified polypropylene with swift heavy ion irradiation

    Arbeitman, Claudia R.; Ibañez, Irene L.; García Bermúdez, Gerardo; Durán, Hebe; Grosso, Mariela F. del; Salguero, Noelia; Mazzei, Rubén

    2012-01-01

    Ion beam irradiation is a well known means to change the physico-chemical properties of polymers, and induced bio and citocompatibility in controlled conditions and in selected areas of surface. However, the enhancement of cell adhesion on a modified substrate does not mean that the surface is adequate for functional cells. The purpose of the present work is to study proliferation, changes in cytoskeleton and cell morphology on substrates as a function of irradiation parameters. We irradiated polypropylene with sulfur (S) ion-beam at energies of 110 MeV with fluences between 1 × 10 6 and 2 × 10 10 ions cm −2 . NIH 3T3 cells were cultured on each sample. Cell morphology was observed using phase contrast microscopy and cytoskeleton proteins with fluorescence microscopy. The analysis show different cellular responses as a functions of irradiation parameter, strongly suggests that different underlying substratum can result in distinct types of cytoskeleton reorganization.

  11. Hydration effect on ion exchange resin irradiated by swift heavy ions and gamma rays

    Boughattas, I.; Labed, V.; Gerenton, A.; Ngono-Ravache, Y.; Dannoux-Papin, A.

    2018-06-01

    Gamma radiolysis of ion exchange resins (IER) is widely studied since the sixties, as a function of different parameters (resin type, dose, atmosphere, water content …). However, to our knowledge, there are very few data concerning hydrogen emission from anionic and cationic resins irradiated at high Linear Energy Transfers (LET). In the present work, we focus on the influence of hydration on hydrogen emission, in anionic and cationic resins irradiated under inert atmosphere using Swift Heavy Ions (SHI) and gamma irradiations. The radiation chemical yield of molecular hydrogen is nonlinear with water content for both resins. The molecular hydrogen production depends first on the water form in IER (free or linked) and second on the solubility of degradation products. Three steps have been observed: at lower water content where G(H2) is stable, at 50%, G(H2) increases due to reactions between water radiolytic species and the resin functional groups and at high water content, G(H2) decreases probably due to its accumulation in water and its consumption by hydroxyl radicals in the supernatant.

  12. Irradiation effects of swift heavy ions on gallium arsenide, silicon and silicon diodes

    Bhoraskar, V.N.

    2001-01-01

    The irradiation effects of high energy lithium, boron, oxygen and silicon ions on crystalline silicon, gallium arsenide, porous silicon and silicon diodes were investigated. The ion energy and fluence were varied over the ranges 30 to 100 MeV and 10 11 to 10 14 ions/cm 2 respectively. Semiconductor samples were characterized with the x-ray fluorescence, photoluminescence, thermally stimulated exo-electron emission and optical reflectivity techniques. The life-time of minority carriers in crystalline silicon was measured with a pulsed electron beam and the lithium depth distribution in GaAs was measured with the neutron depth profiling technique. The diodes were characterized through electrical measurements. The results of optical reflectivity, life-time of minority carriers and photoluminescence show that swift heavy ions induce defects in the surface region of crystalline silicon. In the ion-irradiated GaAs, migration of silicon, oxygen and lithium atoms from the buried region towards the surface was observed, with orders of magnitude enhancement in the diffusion coefficients. Enhancement in the photoluminescence intensity was observed in the GaAs and porous silicon samples that, were irradiated with silicon ions. The trade-off between the turn-off time and the voltage, drop in diodes irradiated with different swift heavy ions was also studied. (author)

  13. Gold wetting effects on sapphire irradiated with GeV uranium ions

    Ramos, S.M.M.

    1997-01-01

    Single crystals of α-Al 2 O 3 were irradiated with 238 U ions using two different energies: 3.4 MeV/u and 1.7 MeV/u. The irradiations were performed at a temperature of ∼80 K, with fluences ranging from 1.2 x 10 12 to 2.5 x 10 12 ions cm -2 . After irradiation, thin gold films were deposited on the sapphire surfaces by using a sputtering method. Subsequent annealing in air at a temperature of 723 and 923 K were applied to investigate the influence of the pre-damage on the adhesion of the gold layer on the sapphire surface. Rutherford backscattering analysis and scanning electron microscopy performed in both virgin and irradiated areas, show that the pre-irradiation damage inhibits the gold film of breaking up into islands after annealing. A wetting effect, which could depend on the damage morphology, is clearly observed. (orig.)

  14. Electron spin resonance investigations on polycarbonate irradiated with U ions

    Chipara, M.I.; Reyes-Romero, J

    2001-12-01

    Electron spin resonance investigations on polycarbonate irradiated with uranium ions are reported. The dependence of the resonance line parameters (line intensity, line width, double integral) on penetration depth and dose is studied. The nature of free radicals induced in polycarbonate by the incident ions is discussed in relation with the track structure. The presence of severe exchange interactions among free radicals is noticed.

  15. Surface ripple evolution by argon ion irradiation in polymers

    Goyal, Meetika; Aggarwal, Sanjeev; Sharma, Annu

    2016-01-01

    In this report, an attempt has been made to investigate the morphological evolution of nanoscale surface ripples on aliphatic (polypropylene, PP) and aromatic (polyethylene terephthalate, PET) polymeric substrates irradiated with 50 keV Ar"+ ions. The specimens were sputtered at off normal incidence of 30° with 5 × 10"1"6 Ar"+ cm"−"2. The topographical features and structural behavior of the specimens were studied using Atomic Force Microscopy (AFM) and UV-Visible spectroscopy techniques, respectively. The Stopping and Range of Ions in Matter simulations were performed to calculate sputtering yield of irradiated PP and PET polymers. Sputtering yield of carbon atoms has been found to be smaller for PP (0.40) as compared to PET (0.73), which is attributed to the different structures of two polymers. AFM analysis demonstrates the evolution of ripple like features with amplitude (2.50 nm) and wavelength (690 nm) on PET while that of lower amplitude (1.50 nm) and higher wavelength (980 nm) on PP specimen. The disorder parameter (Urbach energy) has been found to increase significantly from 0.30 eV to 1.67 eV in case of PP as compared to a lesser increase from 0.35 eV to 0.72 eV in case of PET as revealed by UV-Visible characterization. A mutual correlation between ion beam sputtering induced topographical variations with that of enhancement in the disorder parameter of the specimens has been discussed.

  16. Ductility loss of ion-irradiated zircaloy-2 in iodine

    Shimada, M.; Terasawa, M.; Yamamoto, S.; Kamei, H.; Koizumi, K.

    1981-01-01

    An ion bombardment simulation technique for neutron irradiation was applied to 'thick' materials to study the effect of radiation damage on the ductility change in Zircaloy-2 in an iodine environment. Specimens were prepared from actual cladding tubes and, prior to the irradiation, they were heat-treated in vacuo at 450, 580, and 700/degree/C for 2 h. Irradiation was performed by 52-MeV alpha particles up to the 0.32 displacements per atom (dpa) at 340/degree/C. Ductility loss begins to appear after 0.03 dpa irradiation, both in iodine and argon gas environments. The iodine presence resulted in ductility reduction, compared with the argon result in all irradiation dose ranges examined. The stress applied during irradiation caused ductility loss to commence at lower dosage than in the case of stress-free irradiation. These results are discussed in relation to the existing stress corrosion cracking models

  17. High energy electron irradiation of flowable materials

    Offermann, B.P.

    1975-01-01

    In order to efficiently irradiate a flowable material with high energy electrons, a hollow body is disposed in a container for the material and the material is caused to flow in the form of a thin layer across a surface of the body from or to the interior of the container while the material flowing across the body surface is irradiated. (U.S.)

  18. Freely migrating defects in ion-irradiated Cu3Au

    Wei, L.C.; Lang, E.; Flynn, C.P.; Averback, R.S.

    1999-01-01

    The efficiency of producing freely migrating vacancy defects in irradiated Cu 3 Au was examined using electrical resistivity measurements of radiation-induced ordering on highly perfect single-crystal films. Relative efficiencies for He, Ne, and Ar bombardments at different ion energy and specimen temperature were obtained. The ratio of the efficiencies of 0.6 MeV Ne to He increased with temperature from ∼0.25 at 340 K to a saturation value of ∼0.40 at 520 K. For Ar and He, the ratio increased from ∼0.11 at 360 K to ∼0.18 at 540 K. Estimates indicate that about half of all defects created in cascades are freely migrating. copyright 1999 American Institute of Physics

  19. Ion-irradiation studies of cascade damage in metals

    Averback, R.S.

    1982-03-01

    Ion-irradiation studies of the fundamental aspects of cascade damage in metals are reviewed. The emphasis of these studies has been the determination of the primary state of damage (i.e. the arrangement of atoms in the cascade region prior to thermal migration of defects). Progress has been made towards understanding the damage function (i.e. the number of Frenkel pairs produced as a function of primary recoil atom energy), the spatial configuration of vacancies and interstitials in the cascade and the cascade-induced mixing of atoms. It is concluded for these studies that the agitation of the lattice in the vicinity of energetic displacement cascades stimulates the defect motion and that such thermal spike motion induces recombination and clustering of Frenkel defects. 9 figures

  20. Tuning the conductivity of vanadium dioxide films on silicon by swift heavy ion irradiation

    H. Hofsäss

    2011-09-01

    Full Text Available We demonstrate the generation of a persistent conductivity increase in vanadium dioxide thin films grown on single crystal silicon by irradiation with 1 GeV 238U swift heavy ions at room temperature. VO2 undergoes a temperature driven metal-insulator-transition (MIT at 67 °C. After room temperature ion irradiation with high electronic energy loss of 50 keV/nm the conductivity of the films below the transition temperature is strongly increased proportional to the ion fluence of 5·109 U/cm2 and 1·1010 U/cm2. At high temperatures the conductivity decreases slightly. The ion irradiation slightly reduces the MIT temperature. This observed conductivity change is persistent and remains after heating the samples above the transition temperature and subsequent cooling. Low temperature measurements down to 15 K show no further MIT below room temperature. Although the conductivity increase after irradiation at such low fluences is due to single ion track effects, atomic force microscopy (AFM measurements do not show surface hillocks, which are characteristic for ion tracks in other materials. Conductive AFM gives no evidence for conducting ion tracks but rather suggests the existence of conducting regions around poorly conducting ion tracks, possible due to stress generation. Another explanation of the persistent conductivity change could be the ion-induced modification of a high resistivity interface layer formed during film growth between the vanadium dioxide film and the n-Silicon substrate. The swift heavy ions may generate conducting filaments through this layer, thus increasing the effective contact area. Swift heavy ion irradiation can thus be used to tune the conductivity of VO2 films on silicon substrates.

  1. Influence of irradiation spectrum and implanted ions on the amorphization of ceramics

    Zinkle, S.J.; Snead, L.L.

    1995-01-01

    Polycrystalline Al2O3, magnesium aluminate spinel (MgAl2O4), MgO, Si3N4, and SiC were irradiated with various ions at 200-450 K, and microstructures were examined following irradiation using cross-section TEM. Amorphization was not observed in any of the irradiated oxide ceramics, despsite damage energy densities up to ∼7 keV/atom (70 displacements per atom). On the other hand, SiC readily amorphized after damage levels of ∼0.4 dpa at room temperature (RT). Si3N4 exhibited intermediate behavior; irradiation with Fe 2+ ions at RT produced amorphization in the implanted ion region after damage levels of ∼1 dpa. However, irradiated regions outside the implanted ion region did not amorphize even after damage levels > 5 dpa. The amorphous layer in the Fe-implanted region of Si3N4 did not appear if the specimen was simultaneoulsy irradiated with 1-MeV He + ions at RT. By comparison with published results, it is concluded that the implantation of certain chemical species has a pronounced effect on the amorphization threshold dose of all five materials. Intense ionizing radiation inhibits amorphization in Si3N4, but does not appear to significantly influence the amorphization of SiC

  2. Measurement of ion energy by a calorimetric method

    Mizuhashi, Kiyoshi; Tajima, Satoshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Bunak, Suwat

    1996-12-01

    In calorimetric method, ion energy is determined based on the temperature changes during radiation of an absorbing material, radiation current and heat capacity of the calorimeter. This method is convenient and its measuring procedures are simple as well as the measuring apparatus. Here, the temperature changes of the calorimeter during {sup 14}N ion beam radiation were determined. The temperature increased linearly when irradiated with {sup 14}N{sup 3+}, 8.3 MeV or {sup 14}N{sup 2+}, 6 MeV, but not linearly for {sup 14}N{sup 1+}, 3.6 MeV, resulting in a comparatively large error. Thus, the measurement of ion energy by calorimetric method was found available as a convenient method for an accelerator having an energy stability less than 10{sup -3}. Especially this method seems to be useful for low-energy ion accelerator or ion injecting apparatus. (M.N.)

  3. Ion irradiation effect on metallic condensate adhesion to glass

    Kovalenko, V.V.; Upit, G.P.

    1984-01-01

    The ion irradiation effect on metallic condensate adhesion to glass is investigated. It has been found that in case of indium ion deposition the condensate adhesion to glass cleavages being in contact with atmosphere grows up to the level corresponding to a juvenile surface while in case of argon ion irradiation - exceeds it. It is shown that the observed adhesion growth is determined mainly by the surfwce modification comparising charge accumulation on surface, destruction of a subsurface layer and an interlayer formation in the condensate-substrate interface. The role of these factors in the course of various metals deposition is considered

  4. Disintegration of C60 by Xe ion irradiation

    Kalish, R.; Samoiloff, A.; Hoffman, A.; Uzan-Saguy, C.

    1993-01-01

    The Changes in resistivity of fullerene (C 60 ) films subject to 320 keV Xe ion irradiation are investigated as a function of ion dose. From a comparison of this dependence with similar data on other Xe irradiated C containing insulating materials and with data on C implanted fused quartz, it is concluded that upon ion impact C 60 clusters completely disintegrate. This disintegration releases about 60 C atoms which disperse amongst the remaining intact C 60 spheres giving rise to hopping conductivity between isolated C atoms. 16 refs., 3 figs

  5. Precipitation in Ni-Si during electron and ion irradiation

    Lucas, G. E.; Zama, T.; Ishino, S.

    1986-11-01

    This study was undertaken to further investigate how the nature of the irradiation condition affects precipitation in a dilute Ni-Si system. Transmission electron microscopy (TEM) discs of a solution annealed Ni alloy containing 5 at% Si were irradiated with 400 keV Ar + ions, 200 keV He + ions and 1 MeV electrons at average displacement rates in the range 2 × 10 -5dpa/s to 2 × 10 -3dpa/s at temperatures in the range 25°C to 450°C. Samples irradiated with electrons were observed in situ in an HVEM, while ion irradiated specimens were examined in a TEM after irradiation. Precipitation of Ni 3Si was detected by the appearance of superlattice spots in the electron diffraction patterns. It was found that as the mass of the irradiating species increased, the lower bound temperature at which Ni 3Si precipitation was first observed increased. For electron irradiation, the lower bound temperature at 2 × 10 -3dpa/s was ˜125°C, whereas for 400 keV Ar + irradiation at a similar average displacement rate the lower boundary was approximately 325°C. This suggests that cascade disordering competes with radiation induced solute segregation.

  6. Precipitation in Ni-Si during electron and ion irradiation

    Lucas, G.E.; Zama, T.; Ishino, S.

    1986-01-01

    This study was undertaken to further investigate how the nature of the irradiation condition affects precipitation in a dilute Ni-Si system. Transmission electron microscopy (TEM) discs of a solution annealed Ni alloy containing 5 at% Si were irradiated with 400 keV Ar + ions, 200 keV He + ions and 1 MeV electrons at average displacement rates in the range 2x10 -5 dpa/s to 2x10 -3 dpa/s at temperatures in the range 25 0 C to 450 0 C. Samples irradiated with electrons were observed in situ in an HVEM, while ion irradiated specimens were examined in a TEM after irradiation. Precipitation of Ni 3 Si was detected by the appearance of superlattice spots in the electron diffraction patterns. It was found that as the mass of the irradiating species increased, the lower bound temperature at which Ni 3 Si precipitation was first observed increased. For electron irradiation, the lower bound temperature at 2x10 -3 dpa/s was ∝125 0 C, whereas for 400 keV Ar + irradiation at a similar average displacement rate the lower boundary was approximately 325 0 C. This suggests that cascade disordering competes with radiation induced solute segregation. (orig.)

  7. Corrosion characteristics of Hastelloy N alloy after He+ ion irradiation

    Lin Jianbo; Yu Xiaohan; Li Aiguo; He Shangming; Cao Xingzhong; Wang Baoyi; Li Zhuoxin

    2014-01-01

    With the goal of understanding the invalidation problem of irradiated Hastelloy N alloy under the condition of intense irradiation and severe corrosion, the corrosion behavior of the alloy after He + ion irradiation was investigated in molten fluoride salt at 700 °C for 500 h. The virgin samples were irradiated by 4.5 MeV He + ions at room temperature. First, the virgin and irradiated samples were studied using positron annihilation lifetime spectroscopy (PALS) to analyze the influence of irradiation dose on the vacancies. The PALS results showed that He + ion irradiation changed the size and concentration of the vacancies which seriously affected the corrosion resistance of the alloy. Second, the corroded samples were analyzed using synchrotron radiation micro-focused X-ray fluorescence, which indicated that the corrosion was mainly due to the dealloying of alloying element Cr in the matrix. Results from weight-loss measurement showed that the corrosion generally correlated with the irradiation dose of the alloy. (author)

  8. Recombination and photosensitivity centres in boron nitride irradiated with ions

    Kabyshev, A.; Konusov, F.; Lopatin, V.

    2001-01-01

    The physical-chemical processes, taking place during the irradiation of dielectrics with ions distort the electron structure of the compounds and generate additional localise state in the forbidden zone (FZ). Consequently, the semiconductor layer with the specific surface density of σ ≥ 10 -10 S/ forms on the surface of the dielectric. In addition to his, the high concentration of the radiation-induced defects changes the optical and photoelectric properties of the materials and also the energy characteristics. Analysis of the photoelectric properties indicates that the recombination processes take part in electric transport. These processes restricted the increase of the photosensitivity and changing the kinetics of relaxation of photo conductivity (σ hv ). The practical application of the boron nitride (BN) the in the thermonuclear systems (for example, Ref. 7), stimulates research into the reasons for the deceleration of its properties under the effect of radiation of various types. The conductivity of non-irradiated boron nitride is of the electron-hole nature with a large fraction of the activation component in exchange of the charge carriers between the levels of the defects and the forbidden zones. On the basis of the correlation of the energy and kinetic parameters of luminescence and , the authors of Ref. 8 constructed a model of electron transfers accompanying the electric transport of the boron nitride. In addition to ion-thermal modification, the conductivity of boron nitride is also of the electron-hole nature and is accompanied by luminescence. Examination of the characteristics of luminescence may be useful for obtaining more information on the transport mechanism. In this work, in order to clarify the main parameters of the forbidden band, detailed investigations were carried out into the spectrum of the electronic states of radiation defects which determine the photoelectric and luminescence properties of the modified boron nitride. The

  9. Focused ion beam (FIB) milling of electrically insulating specimens using simultaneous primary electron and ion beam irradiation

    Stokes, D J; Vystavel, T; Morrissey, F

    2007-01-01

    There is currently great interest in combining focused ion beam (FIB) and scanning electron microscopy technologies for advanced studies of polymeric materials and biological microstructures, as well as for sophisticated nanoscale fabrication and prototyping. Irradiation of electrically insulating materials with a positive ion beam in high vacuum can lead to the accumulation of charge, causing deflection of the ion beam. The resultant image drift has significant consequences upon the accuracy and quality of FIB milling, imaging and chemical vapour deposition. A method is described for suppressing ion beam drift using a defocused, low-energy primary electron beam, leading to the derivation of a mathematical expression to correlate the ion and electron beam energies and currents with other parameters required for electrically stabilizing these challenging materials

  10. Revealing ionization-induced dynamic recovery in ion-irradiated SrTiO3

    Velisa, Gihan [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Wendler, Elke [Friedrich Schiller Univ., Jena (Germany). Institut fur Festkorperphysik; Xue, Haizhou [Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science & Engineering; Zhang, Yanwen [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science & Engineering; Weber, William J. [Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science & Engineering; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division

    2018-03-02

    The lack of fundamental understanding on the coupled effects of energy deposition to electrons and atomic nuclei on defect processes and irradiation response poses a significant roadblock for the design and control of material properties. In this work, SrTiO3 has been irradiated with various ion species over a wide range of ion fluences at room temperature with a goal to deposit different amounts of energy to target electrons and atomic nuclei by varying the ratio of electronic to nuclear energy loss. Here, the results unambiguously show a dramatic difference in behavior of SrTiO3 irradiated with light ions (Ne, O) compared to heavy ions (Ar). While the damage accumulation and amorphization under Ar ion irradiation are consistent with previous observations and existing models, the damage accumulation under Ne irradiation reveals a quasi-saturation state at a fractional disorder of 0.54 at the damage peak for an ion fluence corresponding to a dose of 0.5 dpa; this is followed by further increases in disorder with increasing ion fluence. In the case of O ion irradiation, the damage accumulation at the damage peak closely follows that for Ne ion irradiation up to a fluence corresponding to a dose of 0.5 dpa, where a quasi-saturation of fractional disorder level occurs at about 0.48; however, in this case, the disorder at the damage peak decreases slightly with further increases in fluence. This behavior is associated with changes in kinetics due to irradiation-enhanced diffusional processes that are dependent on electronic energy loss and the ratio of electronic to nuclear energy dissipation. Lastly, these findings are critical for advancing the fundamental understanding of ion-solid interactions and for a large number of applications in oxide electronics where SrTiO3 is a foundational material.

  11. Characteristic effects of heavy ion irradiation on the rat brain

    Sun, X.Z.; Takahashi, S.; Kubota, Y.; Yoshida, S.; Takeda, H.; Zhang, R.; Fukui, Y.

    2005-01-01

    Heavy ion irradiation has the feature to administer a large radiation dose in the vicinity of the endpoint in the beam range, and its irradiation system and biophysical characteristics are different from ordinary irradiation instruments like X- or gamma-rays. Using this special feature, heavy ion irradiation has been applied for cancer treatment. The safety and efficacy of heavy ion irradiator have been demonstrated to a great extent. For instance, brain tumors treated by heavy-ion beams became smaller or disappearance. However, fundamental research related to such clinical phenotypes and their underlying mechanisms are little known. In order to clarify characteristic effects of heavy ion irradiation on the brain, we developed an experimental system for irradiating a restricted region of the rat brain using heavy ion beams. The characteristics of the heavy ion beams, histological, behavioral and elemental changes were studied in the rat following heavy ion irradiation. Adult male Sprague-Dawley rats, aged 12 weeks and weighing 260-340 g (Shizuoka Laboratory Animal Center, Hamamatsu, Japan) were used. Rats were deeply anesthetized 10-15 minutes before irradiation with ketamine (40 mg/kg) and xylazine (10 mg/kg), immobilized in a specifically designed jig, and irradiated with 290 MeV/nucleon charged carbon beams in a dorsal-to ventral direction, The left cerebral hemispheres of the brain were irradiated at doses of 100 Gy charged carbon particles. The depth-dose distribution of the heavy ion beams was modified to make a spread-out bragg peak of 5 mm wide with a range modulator. The characteristics of the heavy-ion beams (field and depth of the heavy-ion beams) were examined by a measuring paraffin section of rat brain at different thickness. That extensive necrosis was observed between 2.5 mm and 7.5 mm depth from the surface of the rat head, suggesting a relatively high dose and uniform dose was delivered among designed depths and the spread-out bragg peak used here

  12. Surface structure of Cr0.5 Ti0.5N coatings after heavy ions irradiation and annealing

    Kislitsin, Sergey; Gorlachev, Igor; Uglov, Vladimir

    2015-01-01

    Results of surface structure investigations of TiCrN coating on carbon steel after irradiation by helium, krypton and xenon heavy ions are reported in the present publication. The series of Cr50Ti50N coatings on carbon steel with thickness of 50,..., 300 nm were formed by vacuum arc deposition techniques. Specimens with TiCrN coating on carbon steel were irradiated by low energy 4 He +1 (22 keV) and 4 He +2 (40 keV) ions and high energy Xe +18 and Kr +14 ions with energy of 1.5 MeV/nucleon. Fluence of He ions was 1.0x10 17 ion.cm -2 , fluence of Xe and Kr ions was 5x10 14 -1.0x10 15 ion.cm -2 , irradiation temperature did not exceed 150 deg. C. Study of surface structure was performed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Methods of Roentgen diffractometry and Rutherford backscattering was applied for determination of structure and thickness of coating. In case of irradiation with Xe +18 and Kr +14 ions an investigation of surface morphology and structure was done after successive two hours vacuum annealing of irradiated samples at temperatures 400 deg. C, 500 deg. C and 600 deg. C. It was shown that after irradiation by Xe and Kr ions on the surface of coating convexities appear, surface density of which correlates with ion flux. In the case of Xe, ions irradiation generated convexities of spherical and elongated shape with dimensions ranging from ten to hundreds nm. In the case of Kr ions, only spherical globules were generated, dimensions of which are 10-30 nm. The most likely explanation of observed surface damage is that: convexities on the surface are generated at ion bombardment of specimens with coating. Convexities are the traces of ions passing through coating and they are due to structural reconstruction at energy release along a trajectory of ions braking. Convexities of elongated shape represent overlapping traces from two passing ions. When the projective range of Xe and Kr ions exceeds coating thickness, damage

  13. Food irradiation by low energy electrons

    Bird, J.R.

    1985-01-01

    For some special cases, the use of low energy electrons has advantages over the use of gamma-rays or higher energy electrons for the direct irradiation of food. These advantages arise from details of the interaction processes which are responsible for the production of physical, chemical and biological effects. Factors involved include depth of penetration, dose distribution, irradiation geometry, the possible production of radioactivity and costs

  14. Effect of microstructure on radiation induced segregation and depletion in ion irradiated SS316 steel

    Jin, Hyung Ha; Kwon, Sang Chul; Kwon, Jun Hyun

    2011-01-01

    Irradiation assisted stress corrosion cracking (IASCC), void swelling and irradiation induced hardening are caused by change of characteristics of material by neutron irradiation, stress state of material and environmental situation. It has been known that chemical compositions varies at grain boundary (GB) significantly with fluence level and the depletion of Cr element at GB has been considered as one of important factors causing material degradation, especially, IASCC in austenitic stainless steel. However, experimental results of IASCC under PWR condition were directly not connected with Cr depletion phenomenon by neutron irradiation. Because the mechanism of IASCC under PWR has not yet been clearly understood in spite of many energetic researches, fundamental researches about radiation induced segregation and depletion in irradiated austenitic stainless steels have been attracted again. In this work, an effect of residual microstructure on radiation induced segregation and depletion of alloy elements at GB was investigated in ion irradiated SS316 steel using transmission electron microscope (TEM) with energy dispersive spectrometer (EDS)

  15. In situ and ex situ characterization of the ion-irradiation effects in third generation SiC fibers

    Huguet-Garcia, Juan

    2015-01-01

    The use of third generation SiC fibers, Tyranno SA3 (TSA3) and Hi Nicalon S (HNS), as reinforcement for ceramic composites for nuclear applications requires the characterization of its structural stability and mechanical behavior under irradiation. Regarding the radiation stability, ion-amorphization kinetics of these fibers have been studied and compared to the model material, i.e. 6H-SiC single crystals, with no significant differences. For all samples, full amorphization threshold dose yields ∼0.4 dpa at room temperature and complete amorphization was not achieved for irradiation temperatures over 200 C. Successively, ion-amorphized samples have been thermally annealed. It is reported that thermal annealing at high temperatures not only induces the recrystallization of the ion-amorphized samples but also causes unrecoverable mechanical failure, i.e. cracking and delamination. Cracking is reported to be a thermally driven phenomenon characterized by activation energy of 1.05 eV. Regarding the mechanical irradiation behavior, irradiation creep of TSA3 fibers has been investigated using a tensile device dedicated to in situ tests coupled to two different ion-irradiation lines. It is reported that ion irradiation (12 MeV C 4+ and 92 MeV Xe 23+ ) induces a time-dependent strain under loads where thermal creep is negligible. In addition, irradiation strain is reported to be higher at low irradiation temperatures due to a coupling between irradiation swelling and irradiation creep. At high temperatures, near 1000 C, irradiation swelling is minimized hence allowing the characterization of the irradiation creep. Irradiation creep rate is characterized by a linear correlation between the ion flux and the strain rate and a square root dependence with the applied load. Finally, it has been reported that the higher the electronic energy loss contribution to the stopping regime the higher the irradiation creep of the fiber. (author) [fr

  16. Shape manipulation of ion irradiated Ag nanoparticles embedded in lithium niobate

    Wolf, Steffen; Rensberg, Jura; Johannes, Andreas; Ronning, Carsten; Thomae, Rainer; Smit, Frederick; Neveling, Retief; Bharuth-Ram, Krish; Moodley, Mathew; Bierschenk, Thomas; Rodriguez, Matias; Afra, Boshra; Ridgway, Mark; Hasan, Shakeeb Bin; Rockstuhl, Carsten

    2016-01-01

    Spherical silver nanoparticles were prepared by means of ion beam synthesis in lithium niobate. The embedded nanoparticles were then irradiated with energetic "8"4Kr and "1"9"7Au ions, resulting in different electronic energy losses between 8.1 and 27.5 keV nm"−"1 in the top layer of the samples. Due to the high electronic energy losses of the irradiating ions, molten ion tracks are formed inside the lithium niobate in which the elongated Ag nanoparticles are formed. This process is strongly dependent on the initial particle size and leads to a broad aspect ratio distribution. Extinction spectra of the samples feature the extinction maximum with shoulders on either side. While the maximum is caused by numerous remaining spherical nanoparticles, the shoulders can be attributed to elongated particles. The latter could be verified by COMSOL simulations. The extinction spectra are thus a superposition of the spectra of all individual particles. (paper)

  17. Alkyne End Group Production in Polymeric Materials Induced by Swift Heavy Ion Irradiations

    2001-01-01

    Swift heavy ions in matter lose energy mainly through electronic processes.Since the energy deposition is centered in a very small region with a very high energy density,new effects such as production of alkyne end group can be induced.In this work,PET,PS,PC and PI films are irradiated with Ar,Kr,Xe and U ions and the relationship of the alkyne end group production with electronic energy loss is studied by Fourier transformed infrared infrared(FTLR)spectra measurements.

  18. Structuring of silicon with low energy focused ion beams

    Nebiker, P.W.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muehle, R. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

    1997-09-01

    The defect production in silicon induced by focused ion beam irradiation as a function of energy and projectile mass has been investigated and compared to the measured sputter yield. The aim was to find optimal beam parameters for the structuring of semiconductors with a minimum amount of defects produced per removed atom. (author) 2 figs., 2 refs.

  19. Morphological change of self-organized protrusions of fluoropolymer surface by ion beam irradiation

    Kitamura, Akane; Kobayashi, Tomohiro; Satoh, Takahiro; Koka, Masashi; Kamiya, Tomihiro; Suzuki, Akihiro; Terai, Takayuki

    2013-01-01

    Polytetrafluoroethylene (PTFE) and fluorinated ethylene propylene (FEP) are typical fluoropolymers displaying several desirable technological properties such as electrical insulation and high chemical resistance. When their surfaces are irradiated with ion beams, dense micro-protrusions formed after the emergence and spread of micropores across the entire irradiated area, allowing culture cells to spread on the top of the protrusions. In this study, we investigate the morphological changes introduced in the fluoropolymer surfaces by ion beams as the energy of the beams is increased. When an FEP sample was irradiated with a nitrogen ion beam with an energy of less than 350 keV at 1.0 μA/cm 2 , protrusions were formed with a density between 2 × 10 7 /cm 2 and 2 × 10 8 /cm 2 . However, at energies higher than 350 keV, the protrusions became sparse, and the density dropped to 5 × 10 2 /cm 2 . Protrusions appeared sporadically during irradiation at high energies, and the top of the protrusions appeared as spots inside the sample, which were difficult to etch and became elongated as the erosion of the surface progressed. Erosion was caused by sputtering of FEP molecules and evaporation at notably elevated temperatures on the surface. Analysis based on attenuated total reflectance/Fourier transform infrared spectroscopy showed the presence of C=C bonds as well as –COOH, –C=O, and –OH bonds on all irradiated samples. Their concentration on the surface densely covered with micro-protrusions was higher than that on the surface with sparse protrusions after irradiation at energies exceeding 350 keV. Thus, we determined a suitable range for the ion energy for creating FEP surfaces densely covered with protrusions

  20. Synthesizing single-phase β-FeSi2 via ion beam irradiations of Fe/Si bilayers

    Milosavljevic, M.; Dhar, S.; Schaaf, P.; Bibic, N.; Lieb, K.P.

    2001-01-01

    This paper presents results on the direct synthesis of the β-FeSi 2 phase by ion beam mixing of Fe/Si bilayers with Xe ions. The influence of the substrate temperature, ion fluence and energy on the growth of this phase was investigated using Rutherford backscattering (RBS), X-ray diffraction (XRD) and conversion electron Moessbauer spectroscopy (CEMS). Complete growth of single-phase β-FeSi 2 was achieved by 205 keV Xe ion irradiation to a fluence of 2x10 16 ions/cm 2 at 600 deg. C. We propose a two-step reaction mechanism involving thermal and ion beam energy deposition

  1. Depth distribution of displacement damage in α-iron under triple beam ion irradiation

    Horton, L.L.; Bentley, J.; Jesser, W.A.

    1981-01-01

    The depth dependence of the defect structures was determined for iron irradiated at 850 0 K with 4 MeV Fe 2+ and energetic helium and deuteron ions to 10 dpa and fusion levels of helium and deuterium. From the damage profiles, a sectioning depth of 0.9 μm was selected for studies of iron and bcc iron alloys, such as ferritic steels, utilizing similar irradiation parameters. A comparison of the experimental damage profile to the deposited energy and deposited ion profiles calculated by E-DEP-1 indicated a possible overestimate of the LSS stopping power of at least 22%

  2. Damage profiles and ion distribution in Pt-irradiated SiC

    Xue, H.Z. [Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Zhang, Y., E-mail: Zhangy1@ornl.gov [Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Zhu, Z. [Pacific Northwest National Laboratory, P.O. Box 999, Richland, WA 99352 (United States); Zhang, W.M. [Department of Radiation Therapy, Peking University First Hospital, Beijing 100034 (China); Bae, I.-T. [Small Scale Systems Integration and Packaging Center, State University of New York at Binghamton, P.O. Box 6000, Binghamton, NY 13902 (United States); Weber, W.J. [Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)

    2012-09-01

    Single crystalline 6H-SiC samples were irradiated at 150 K with 2 MeV Pt ions. The local volume swelling was determined by electron energy loss spectroscopy (EELS), and a nearly sigmoidal dependence on irradiation dose is observed. The disorder profiles and ion distribution were determined by Rutherford backscattering spectrometry (RBS), transmission electron microscopy, and secondary ion mass spectrometry. Since the volume swelling reaches 12% over the damage region at high ion fluence, the effect of lattice expansion is considered and corrected for in the analysis of RBS spectra to obtain depth profiles. Projectile and damage profiles are estimated by SRIM (Stopping and Range of Ions in Matter). When compared with the measured profiles, the SRIM code predictions of ion distribution and the damage profiles are underestimated due to significant overestimation of the electronic stopping power for the slow heavy Pt ions. By utilizing the reciprocity method, which is based on the invariance of the inelastic energy loss in ion-solid collisions against interchange of projectile and target atom, a much lower electronic stopping power is deduced. A simple approach, based on reducing the density of SiC target in SRIM simulation, is proposed to compensate the overestimated SRIM electronic stopping power values, which results in improved agreement between predicted and measured damage profiles and ion ranges.

  3. Folding two dimensional crystals by swift heavy ion irradiation

    Ochedowski, Oliver; Bukowska, Hanna [Fakultät für Physik and CENIDE, Universität Duisburg-Essen, D-47048 Duisburg (Germany); Freire Soler, Victor M. [Fakultät für Physik and CENIDE, Universität Duisburg-Essen, D-47048 Duisburg (Germany); Departament de Fisica Aplicada i Optica, Universitat de Barcelona, E08028 Barcelona (Spain); Brökers, Lara [Fakultät für Physik and CENIDE, Universität Duisburg-Essen, D-47048 Duisburg (Germany); Ban-d' Etat, Brigitte; Lebius, Henning [CIMAP (CEA-CNRS-ENSICAEN-UCBN), 14070 Caen Cedex 5 (France); Schleberger, Marika, E-mail: marika.schleberger@uni-due.de [Fakultät für Physik and CENIDE, Universität Duisburg-Essen, D-47048 Duisburg (Germany)

    2014-12-01

    Ion irradiation of graphene, the showcase model of two dimensional crystals, has been successfully applied to induce various modifications in the graphene crystal. One of these modifications is the formation of origami like foldings in graphene which are created by swift heavy ion irradiation under glancing incidence angle. These foldings can be applied to locally alter the physical properties of graphene like mechanical strength or chemical reactivity. In this work we show that the formation of foldings in two dimensional crystals is not restricted to graphene but can be applied for other materials like MoS{sub 2} and hexagonal BN as well. Further we show that chemical vapour deposited graphene forms foldings after swift heavy ion irradiation while chemical vapour deposited MoS{sub 2} does not.

  4. Folding two dimensional crystals by swift heavy ion irradiation

    Ochedowski, Oliver; Bukowska, Hanna; Freire Soler, Victor M.; Brökers, Lara; Ban-d'Etat, Brigitte; Lebius, Henning; Schleberger, Marika

    2014-01-01

    Ion irradiation of graphene, the showcase model of two dimensional crystals, has been successfully applied to induce various modifications in the graphene crystal. One of these modifications is the formation of origami like foldings in graphene which are created by swift heavy ion irradiation under glancing incidence angle. These foldings can be applied to locally alter the physical properties of graphene like mechanical strength or chemical reactivity. In this work we show that the formation of foldings in two dimensional crystals is not restricted to graphene but can be applied for other materials like MoS 2 and hexagonal BN as well. Further we show that chemical vapour deposited graphene forms foldings after swift heavy ion irradiation while chemical vapour deposited MoS 2 does not

  5. Chemical Bonding States of TiC Films before and after Hydrogen Ion Irradiation

    2007-01-01

    TiC films deposited by rf magnetron sputtering followed by Ar+ ion bombardment were irradiated with a hydrogen ion beam. X-ray photoelectron spectroscopy (XPS) was used for characterization of the chemical bonding states of C and Ti elements of the TiC films before and after hydrogen ion irradiation, in order to understand the effect of hydrogen ion irradiation on the films and to study the mechanism of hydrogen resistance of TiC films. Conclusions can be drawn that ion bombardment at moderate energy can cause preferential physical sputtering of carbon atoms from the surface of low atomic number (Z) material. This means that ion beam bombardment leads to the formation of a non-stoichiometric composition of TiC on the surface.TiC films prepared by ion beam mixing have the more excellent characteristic of hydrogen resistance. One important cause, in addition to TiC itself, is that there are many vacant sites in TiC created by ion beam mixing.These defects can easily trap hydrogen and effectively enhance the effect of hydrogen resistance.

  6. Induction of the Tn10 Precise Excision in E. coli Cells after Accelerated Heavy Ions Irradiation

    Zhuravel, D V

    2003-01-01

    The influence of the irradiation of different kinds on the indication of the structural mutations in the bacteria Escherichia coli is considered. The regularities of the Tn10 precise excision after accelerated ^{4}He and ^{12}C ions irradiations with different linear energy transfer (LET) were investigated. Dose dependences of the survival and relative frequency of the Tn10 precise excision were obtained. It was shown, that the relative frequency of the Tn10 precise excision is the exponential function from the irradiation dose. Relative biological efficiency (RBE), and relative genetic efficiency (RGE) were calculated, and were treated as the function of the LET.

  7. Constructing carbon nanotube junctions by Ar ion beam irradiation

    Ishaq, Ahmad; Ni Zhichun; Yan Long; Gong Jinlong; Zhu Dezhang

    2010-01-01

    Carbon nanotubes (CNTs) irradiated by Ar ion beams at elevated temperature were studied. The irradiation-induced defects in CNTs are greatly reduced by elevated temperature. Moreover, the two types of CNT junctions, the crossing junction and the parallel junction, were formed. And the CNT networks may be fabricated by the two types of CNT junctions. The formation process and the corresponding mechanism of CNT networks are discussed.

  8. Effect of ion beam irradiation on the structure of ZnO films deposited by a dc arc plasmatron.

    Penkov, Oleksiy V; Lee, Heon-Ju; Plaksin, Vadim Yu; Ko, Min Gook; Joa, Sang Beom; Yim, Chan Joo

    2008-02-01

    The deposition of polycrystalline ZnO film on a cold substrate was performed by using a plasmatron in rough vacuum condition. Low energy oxygen ion beam generated by a cold cathode ion source was introduced during the deposition process. The change of film property on the ion beam energy was checked. It is shown that irradiation by 200 eV ions improves crystalline structure of the film. Increasing of ion beam energy up to 400 eV leads to the degradation of a crystalline structure and decreases the deposition rate.

  9. Self-ion Irradiation Damage of F/M and ODS steels

    Kang, Suk Hoon; Chun, Young-Bum; Noh, Sanghoon; Jang, Jinsung; Kim, Tae Kyu

    2014-01-01

    Oxide dispersion strengthened (ODS) ferritic steels are potential high-temperature materials that are stabilized by dispersed particles at elevated temperatures. These dispersed particles improve the tensile strength and creep rupture strength, they are expected to increase the operation temperature up to approximately 650 .deg. C and also enhance the energy efficiency of the fusion reactor. Some reports described that the nano-clusters are strongly resistant to coarsening by annealing up to 1000 .deg. C, and nanoclusters do not change after ion irradiation up to 0.7 dpa at 300 .deg. C. ODS steels will be inevitably exposed to neutron irradiation condition; the irradiation damages, creep and swelling are always great concern. The dispersed oxide particles are believed to determine the performance of the steel, even the radiation resistance. In this study, F/M and ODS model alloys of Korea Atomic Energy Research Institute (KAERI) were irradiated by Fe 3+ self-ion to emulate the neutron irradiation effect. In this study, Fe 3+ self-ion irradiation is used as means of introducing radiation damage in F/M steel and ODS steel. The ion accelerator named DuET (in Kyoto University, Japan) was used for irradiation of Fe 3+ ion by 6.4 MeV at 300 .deg. C. The maximum damage rate in F/M and ODS steels were estimated roughly 6 dpa. After radiation, point or line defects were dominantly observed in F/M steel, on the other hands, small circular cavities were typically observed in ODS steel. Nanoindentation is a useful tool to determine the irradiationinduced hardness change in the damage layer of ionirradiated iron base alloys

  10. GXRD study of 100 MeV Fe9+ ion irradiated indium phosphide

    Dubey, R.L.; Dubey, S.K.; Kachhap, N.K.; Kanjilal, D.

    2014-01-01

    Swift heavy ions with MeV to GeV kinetic energy offer unique possibilities of modifying material properties. Each projectile passing through the target material causes loss of its energy by ion-electrons and ion-atoms interaction with the target material. The consequence of formal one is to change in surface properties and latter to produces damage deep in the target material near the projected range of projectile. In the present work, indium phosphide samples were irradiated at 100 MeV 56 Fe 9+ ions with different fluences varying from 1x10 12 to 1x10 14 ions cm -2 using the 15UD Pelletron facilities at Inter University Accelerator Centre (IUAC), New Delhi. Grazing angle X-ray diffraction technique was used to investigate the structural properties of irradiated indium phosphide at different depths. The GXRD spectra of non-irradiated and irradiated samples were recorded at different grazing angle i.e 1°, 2°, 3°, 4° and 5° to get the structural information over the projected range. The detailed result will be presented and discussed in the conference. (author)

  11. Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide

    Jadhav, Vidya

    2015-09-01

    Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide crystal have been reported. Single crystal, 1 0 0> orientations and ∼500 μm thick p-type GaSb samples with carrier concentration of 3.30 × 1017 cm-3 were irradiated at 100 MeV Fe7+ ions. We have used 15UD Pelletron facilities at IUAC with varying fluences of 5 × 1010-1 × 1014 ions cm-2. The effects of irradiation on these samples have been investigated using, spectroscopic ellipsometry, atomic force microscopy and ultraviolet-visible-NIR spectroscopy techniques. Ellipsometry parameters, psi (Ψ) and delta (Δ) for the unirradiated sample and samples irradiated with different fluences were recorded. The data were fit to a three phase model to determine the refractive index and extinction coefficient. The refractive index and extinction coefficient for various fluences in ultraviolet, visible, and infrared, regimes were evaluated. Atomic force microscopy has been used to study these surface modifications. In order to have more statistical information about the surface, we have plotted the height structure histogram for all the samples. For unirradiated sample, we observed the Gaussian fitting. This result indicates the more ordered height structure symmetry. Whereas for the sample irradiated with the fluence of 1 × 1013, 5 × 1013 and 1 × 1014 ions cm-2, we observed the scattered data. The width of the histogram for samples irradiated up to the fluence of 1 × 1013 ion cm-2 was found to be almost same however it decreased at higher fluence. UV reflectance spectra of the sample irradiated with increasing fluences exhibit three peaks at 292, 500 and 617 nm represent the high energy GaSb; E1, E1 + Δ and E2 band gaps in all irradiated samples.

  12. Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide

    Jadhav, Vidya

    2015-01-01

    Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide crystal have been reported. Single crystal, 1 0 0〉 orientations and ∼500 μm thick p-type GaSb samples with carrier concentration of 3.30 × 10 17 cm −3 were irradiated at 100 MeV Fe 7+ ions. We have used 15UD Pelletron facilities at IUAC with varying fluences of 5 × 10 10 –1 × 10 14 ions cm −2 . The effects of irradiation on these samples have been investigated using, spectroscopic ellipsometry, atomic force microscopy and ultraviolet–visible–NIR spectroscopy techniques. Ellipsometry parameters, psi (Ψ) and delta (Δ) for the unirradiated sample and samples irradiated with different fluences were recorded. The data were fit to a three phase model to determine the refractive index and extinction coefficient. The refractive index and extinction coefficient for various fluences in ultraviolet, visible, and infrared, regimes were evaluated. Atomic force microscopy has been used to study these surface modifications. In order to have more statistical information about the surface, we have plotted the height structure histogram for all the samples. For unirradiated sample, we observed the Gaussian fitting. This result indicates the more ordered height structure symmetry. Whereas for the sample irradiated with the fluence of 1 × 10 13 , 5 × 10 13 and 1 × 10 14 ions cm −2 , we observed the scattered data. The width of the histogram for samples irradiated up to the fluence of 1 × 10 13 ion cm −2 was found to be almost same however it decreased at higher fluence. UV reflectance spectra of the sample irradiated with increasing fluences exhibit three peaks at 292, 500 and 617 nm represent the high energy GaSb; E 1 , E 1 + Δ and E 2 band gaps in all irradiated samples

  13. Irradiation effects in Fe-30%Ni alloy during Ar ion implantation

    Soukieh, Mohamad; Al-Mohamad, Ali

    1993-12-01

    The use of metallic thin films for studying the processes which take place during ion irradiation has recently increased. For example, ion implantation is widely used to study the structural defects in transition metallic thin films such as (Fe, Ni, Co), because it can simulate the effects occurring in nuclear reactors during neutron irradiation especially the swelling of reactor materials. The swelling of metals and alloys is strongly related to the material structure and to the irradiation conditions. The general feature of formation of structural defects as a function of irradiation dosage and annealing temperature is well known. However, the detailed mechanisms are still not well understood. For example, the swelling of iron alloy with 30-35% nickel is very small in comparison with other Ni concentrations, and there is no clear information on the possibility of phase transitions in fe-Ni alloys during irradiation. The aim of this work is to study the phase-structural changes in Fe-30% Ni implanted by high dose of argon ions. The effect of irradiation with low energy argon ions (40 KeV, and fluences of 10.E15 to 10.E17 ions/cm) on the deposited thin films of Fe-30% Ni alloy was investigated using RBS and TEM techniques. The thicknesses of these films were about 65+-10 nm deposited on ceramic, KBr, and Be fiols substrates. Gas bubble formation and profile distribution of the implanted argon ions were investigated. Formation of an ordered phase Fe 3 Ni during irradiation appears to inhibit gas bubble formations in the film structure. (author). 17 refs., 15 figs., 7 tabs

  14. Scanning ion microscopy with low energy lithium ions

    Twedt, Kevin A.; Chen, Lei; McClelland, Jabez J.

    2014-01-01

    Using an ion source based on photoionization of laser-cooled lithium atoms, we have developed a scanning ion microscope with probe sizes of a few tens of nanometers and beam energies from 500 eV to 5 keV. These beam energies are much lower than the typical operating energies of the helium ion microscope or gallium focused ion beam systems. We demonstrate how low energy can be advantageous in ion microscopy when detecting backscattered ions, due to a decreased interaction volume and the potential for surface sensitive composition analysis. As an example application that demonstrates these advantages, we non-destructively image the removal of a thin residual resist layer during plasma etching in a nano-imprint lithography process. - Highlights: • We use an ion source based on photoionization of laser-cooled lithium atoms. • The ion source makes possible a low energy (500 eV to 5 keV) scanning ion microscope. • Low energy is preferred for ion microscopy with backscattered ions. • We use the microscope to image a thin resist used in nano-imprint lithography

  15. New cultivar produced by heavy-ion beam irradiation

    Kanaya, Takeshi; Miyazaki, Kiyoshi; Suzuki, Kenichi; Iwaki, Kazunari [Suntory Flowers Ltd., Higashiomi, Shiga (Japan); Ichida, Hiroyuki; Hayashi, Yoriko; Saito, Hiroyuki; Ryuto, Hiromichi; Fukunishi, Nobuhisa; Abe, Tomoko [RIKEN, Nishina Center, Wako, Saitama (Japan)

    2007-03-15

    The RIKEN accelerator research facility (RARF) is the one of the biggest facilities to accelerate heavy ions in all over the world since 1986. We started our trials in plant breeding since 1993. Soon we found that the ion beam is highly effective in the cause of mutagenesis of tobacco embryos during the fertilization without damage to other plant tissue. RIKEN and Suntory Flowers Ltd. have jointly developed some new ornamental varieties of Verbena and Petunia using ion-beam irradiation. We already put 5 new flower cultivars on the market in Japan, USA, Canada and EU since 2002. We report here a new variety of Torenia obtained by ion-beam irradiation. (author)

  16. Modification of bamboo surface by irradiation of ion beams

    Wada, M.; Nishigaito, S.; Flauta, R.; Kasuya, T.

    2003-01-01

    When beams of hydrogen ions, He + and Ar + were irradiated onto bamboo surface, gas release of hydrogen, water, carbon monoxide and carbon dioxide were enhanced. Time evolution of the gas emission showed two peaks corresponding to release of adsorbed gas from the surface by sputtering, and thermal desorption caused by the beam heating. The difference in etched depths between parenchyma lignin and vascular bundles was measured by bombarding bamboo surface with the ion beams in the direction parallel to the vascular bundles. For He + and Ar + , parenchyma lignin was etched more rapidly than vascular bundles, but the difference in etched depth decreased at a larger dose. In the case of hydrogen ion bombardment, vascular bundles were etched faster than parenchyma lignin and the difference in etched depth increased almost in proportion to the dose. The wettability of outer surface of bamboo was improved most effectively by irradiation of a hydrogen ion beam

  17. Ion irradiation damage in ilmenite under cryogenic conditions

    Mitchell, J.N.; Yu, N.; Devanathan, R.; Sickafus, K.E.; Nastasi, M.A.

    1996-01-01

    A natural single crystal of ilmenite was irradiated at 100 K with 200 keV Ar 2+ . Rutherford backscattering spectroscopy and ion channeling with 2 MeV He + ions were used to monitor damage accumulation in the surface region of the implanted crystal. At an irradiation fluence of 1 x 10 15 Ar 2+ cm -2 , considerable near-surface He + ion dechanneling was observed, to the extent that ion yield from a portion of the aligned crystal spectrum reached the yield level of a random spectrum. This observation suggests that the near-surface region of the crystal was amorphized by the implantation. Cross-sectional transmission electron microscopy and electron diffraction on this sample confirmed the presence of a 150 mm thick amorphous layer. These results are compared to similar investigations on geikielite (MgTiO 3 ) and spinel (MgAl 2 O 4 ) to explore factors that may influence radiation damage response in oxides

  18. New cultivar produced by heavy-ion beam irradiation

    Kanaya, Takeshi; Miyazaki, Kiyoshi; Suzuki, Kenichi; Iwaki, Kazunari; Ichida, Hiroyuki; Hayashi, Yoriko; Saito, Hiroyuki; Ryuto, Hiromichi; Fukunishi, Nobuhisa; Abe, Tomoko

    2007-01-01

    The RIKEN accelerator research facility (RARF) is the one of the biggest facilities to accelerate heavy ions in all over the world since 1986. We started our trials in plant breeding since 1993. Soon we found that the ion beam is highly effective in the cause of mutagenesis of tobacco embryos during the fertilization without damage to other plant tissue. RIKEN and Suntory Flowers Ltd. have jointly developed some new ornamental varieties of Verbena and Petunia using ion-beam irradiation. We already put 5 new flower cultivars on the market in Japan, USA, Canada and EU since 2002. We report here a new variety of Torenia obtained by ion-beam irradiation. (author)

  19. The effect of ion irradiation on inert gas bubble mobility

    Alexander, D.E.; Birtcher, R.C.

    1991-09-01

    The effect of Al ion irradiation on the mobility of Xe gas bubbles in Al thin films was investigated. Transmission electron microscopy was used to determine bubble diffusivities in films irradiated and/or annealed at 673K, 723K and 773K. Irradiation increased bubble diffusivity by a factor of 2--9 over that due to thermal annealing alone. The Arrhenius behavior and dose rate dependence of bubble diffusivity are consistent with a radiation enhanced diffusion phenomenon affecting a volume diffusion mechanism of bubble transport. 9 refs., 3 figs., 2 tabs

  20. Susceptible genes and molecular pathways related to heavy ion irradiation in oral squamous cell carcinoma cells

    Fushimi, Kazuaki; Uzawa, Katsuhiro; Ishigami, Takashi; Yamamoto, Nobuharu; Kawata, Tetsuya; Shibahara, Takahiko; Ito, Hisao; Mizoe, Jun-etsu; Tsujii, Hirohiko; Tanzawa, Hideki

    2008-01-01

    Background and purpose: Heavy ion beams are high linear energy transfer (LET) radiation characterized by a higher relative biologic effectiveness than low LET radiation. The aim of the current study was to determine the difference of gene expression between heavy ion beams and X-rays in oral squamous cell carcinoma (OSCC)-derived cells. Materials and methods: The OSCC cells were irradiated with accelerated carbon or neon ion irradiation or X-rays using three different doses. We sought to identify genes the expression of which is affected by carbon and neon ion irradiation using Affymetrix GeneChip analysis. The identified genes were analyzed using the Ingenuity Pathway Analysis Tool to investigate the functional network and gene ontology. Changes in mRNA expression in the genes were assessed by real-time quantitative reverse transcriptase-polymerase chain reaction (qRT-PCR). Results: The microarray analysis identified 84 genes that were modulated by carbon and neon ion irradiation at all doses in OSCC cells. Among the genes, three genes (TGFBR2, SMURF2, and BMP7) and two genes (CCND1 and E2F3), respectively, were found to be involved in the transforming growth factor β-signaling pathway and cell cycle:G1/S checkpoint regulation pathway. The qRT-PCR data from the five genes after heavy ion irradiation were consistent with the microarray data (P < 0.01). Conclusion: Our findings should serve as a basis for global characterization of radiation-regulated genes and pathways in heavy ion-irradiated OSCC

  1. Surface modification of multilayer graphene using Ga ion irradiation

    Wang, Quan, E-mail: wangq@mail.ujs.edu.cn [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Shao, Ying; Ge, Daohan; Ren, Naifei [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Yang, Qizhi [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); State key laboratory of Robotics, Chinese Academy of Sciences, Shengyang 110000 (China)

    2015-04-28

    The effect of Ga ion irradiation intensity on the surface of multilayer graphene was examined. Using Raman spectroscopy, we determined that the irradiation caused defects in the crystal structure of graphene. The density of defects increased with the increase in dwell times. Furthermore, the strain induced by the irradiation changed the crystallite size and the distance between defects. These defects had the effect of doping the multilayer graphene and increasing its work function. The increase in work function was determined using contact potential difference measurements. The surface morphology of the multilayer graphene changed following irradiation as determined by atomic force microscopy. Additionally, the adhesion between the atomic force microscopy tip and sample increased further indicating that the irradiation had caused surface modification, important for devices that incorporate graphene.

  2. Dose effects on damage of thymidylic acid and its components irradiated by A N+ ion beam

    Shao Chunlin; Yu Zengliang

    1996-08-01

    Research into damage of DNA components is an important field in mechanism study to the low energy ion beam irradiation. It was found that the UV difference spectra of irradiated thymine (T) had two positive peaks caused by the changes of π electron conjugation of the pyrimidine ring, and that the residual activity of T sample irradiated by a N + ion beam was not influenced by treatments of acid and alkali as well as heat. In addition, the residual activities of irradiated thymidine (dTR) and thymidine 5'-phosphate (5'-dTMP) with and without treating of strong acid and strong alkali were also measured. With UV absorption spectrophotometry, the yield of T released from the irradiated samples of dTR and 5'-dTMP and the residual concentration of these target molecules were deduced, and it was found that the yield of T increased when the solution of the irradiated dTR sample was treated by heat but decreased when this solution was treated by acid and alkali for these treatments splitting T-S or T-S-P. On the other hand, the yield of inorganic phosphate released from the irradiated 5'-dTMP was investigated and found that it was increased by the treatment of alkali and that the increase degree was depended on the time scale of the treatment. Moreover, G(Pi) of the irradiated 5'-dTMP non-linearly decreased with increasing dose. (10 figs.)

  3. Mono-energetic ions emission by nanosecond laser solid target irradiation

    Muoio, A., E-mail: Annamaria.Muoio@lns.infn.it [Istituto Nazionale di Fisica Nucleare – Laboratori Nazionali del Sud, Via S. Sofia 62, 95123 Catania (Italy); Dipartimento di Fisica e Scienze della Terra, Università degli Studi di Messina, Viale F.S. D’Alcontres 31, 98166 Messina (Italy); Tudisco, S. [Istituto Nazionale di Fisica Nucleare – Laboratori Nazionali del Sud, Via S. Sofia 62, 95123 Catania (Italy); Altana, C. [Istituto Nazionale di Fisica Nucleare – Laboratori Nazionali del Sud, Via S. Sofia 62, 95123 Catania (Italy); Dipartimento di Fisica e Astronomia, Università degli Studi di Catania, Via S. Sofia 64, 95123 Catania (Italy); Lanzalone, G. [Istituto Nazionale di Fisica Nucleare – Laboratori Nazionali del Sud, Via S. Sofia 62, 95123 Catania (Italy); Università degli Studi di Enna “Kore”, Via delle Olimpiadi, 94100 Enna (Italy); Mascali, D.; Cirrone, G.A.P.; Schillaci, F. [Istituto Nazionale di Fisica Nucleare – Laboratori Nazionali del Sud, Via S. Sofia 62, 95123 Catania (Italy); Trifirò, A. [Dipartimento di Fisica e Scienze della Terra, Università degli Studi di Messina, Viale F.S. D’Alcontres 31, 98166 Messina (Italy); Sezione INFN, Catania (Italy)

    2016-09-01

    An experimental campaign aiming to investigate the acceleration mechanisms through laser–matter interaction in nanosecond domain has been carried out at the LENS (Laser Energy for Nuclear Science) laboratory of INFN-LNS, Catania. Pure Al targets were irradiated by 6 ns laser pulses at different pumping energies, up to 2 J. Advanced diagnostics tools were used to characterize the plasma plume and ion production. We show the preliminary results of this experimental campaign, and especially the ones showing the production of multicharged ions having very narrow energy spreads.

  4. Energy uses in combination processes applying irradiation

    Brynjolfsson, A.

    1998-01-01

    The costs of energy in the food system are significant and have increased as a result of the growth in population worldwide. This, in turn, demands an increased harvest per area of land, and thus intensive agriculture. The energy used in the food system is not only a drain on limited resources but also has an adverse impact on the environment. It is therefore important to devise methods that reduce energy in all undertakings. The energy used in food irradiation is relatively low compared with other methods and relative to the amount of energy used in producing food. for this reason, food irradiation is an environmentally friendly method and the costs of processing and preserving food do not depend greatly on the fluctuating costs of renewable energy sources such as oil. Irradiation in 60 Co facilities uses a very small amount of energy, about 0.032-0.0465 MJ/kg for radicidation doses of 3 kGy. Irradiation in 5 MV DC electron accelerator facilities uses about twice as much energy; 10 MV travelling wave accelerator facilities use about five times as much and 5 MV X ray facilities about 25 times as much as 60 Co facilities. In practice, X ray facilities are employed only for low dose applications such as sprout inhibition, inactivation of trichina in pork products and disinfestation of fruits, therefore the energy used in low. Frequently, irradiation can be used in combination with other low energy methods such as the sun drying of spices, condiments, vegetables and fish. The overall method of preservation is then particularly environmentally friendly and results in microbiologically safe and wholesome food. (author)

  5. The thermal-spike model description of the ion-irradiated polyimide

    Sun Youmei; Zhang Chonghong; Zhu Zhiyong; Wang Zhiguang; Jin Yunfan; Liu Jie; Wang Ying

    2004-01-01

    To describe the role of electronic energy loss (dE/dX) e for chemical modification of polyimide (PI), multi-layer stacks (corresponding to different dE/dX) were irradiated by different swift heavy ions (1.158 GeV Fe 56 and 1.755 GeV Xe 136 ) under vacuum and at room temperature. Chemical changes of modified PI films were studied by Fourier transform infrared (FTIR) spectroscopy. The chain disruption rate of PI was investigated in the fluence range from 1 x 10 11 to 6 x 10 12 ions/cm 2 and a wider energy stopping power range (2.2-5.1 keV/nm for Fe 56 ions and 8.6-11.5 keV/nm for Xe 136 ions). Alkyne formation was observed over the electronic energy loss range of interest. By applying the saturated track model assumption (the damage process only occur in a cylinder of area σ), the mean degradation and alkyne formation radii in tracks were induced for Fe and Xe ion irradiation, respectively. The results were validated by the thermal-spike model. The analysis of the irradiated PI films shows that the predictions of the thermal-spike model of Szenes are in qualitative agreement with the curve shape of experimental results

  6. The Mean Excitation Energy of Atomic Ions

    Sauer, Stephan; Oddershede, Jens; Sabin, John R.

    2015-01-01

    A method for calculation of the mean excitation energies of atomic ions is presented, making the calculation of the energy deposition of fast ions to plasmas, warm, dense matter, and complex biological systems possible. Results are reported to all ions of helium, lithium, carbon, neon, aluminum...

  7. Effect of swift heavy ion irradiation on bare and coated ZnS quantum dots

    Chowdhury, S.; Hussain, A.M.P.; Ahmed, G.A.; Singh, F.; Avasthi, D.K.; Choudhury, A.

    2008-01-01

    The present study compares structural and optical modifications of bare and silica (SiO 2 ) coated ZnS quantum dots under swift heavy ion (SHI) irradiation. Bare and silica coated ZnS quantum dots were prepared following an inexpensive chemical route using polyvinyl alcohol (PVA) as the dielectric host matrix. X-ray diffraction (XRD) and transmission electron microscopy (TEM) study of the samples show the formation of almost spherical ZnS quantum dots. The UV-Vis absorption spectra reveal blue shift relative to bulk material in absorption energy while photoluminescence (PL) spectra suggests that surface state and near band edge emissions are dominating in case of bare and coated samples, respectively. Swift heavy ion irradiation of the samples was carried out with 160 MeV Ni 12+ ion beam with fluences 10 12 to 10 13 ions/cm 2 . Size enhancement of bare quantum dots after irradiation has been indicated in XRD and TEM analysis of the samples which has also been supported by optical absorption spectra. However similar investigations on irradiated coated quantum dots revealed little change in quantum dot size and emission. The present study thus shows that the coated ZnS quantum dots are stable upon SHI irradiation compared to the bare one

  8. Radioprotective effects of melatonin on carbon-ion and X ray irradiation in mice

    Saito, Masayoshi; Kawata, Tetsuya; Liu, C.; Sakurai, Akiko; Ito, Hisao; Ando, Koichi

    2004-01-01

    The radioprotective ability of melatonin was investigated in C3H mice irradiated to a whole-body X-ray (150 Kv, 20 mA) and carbon-ion (290 MeV/u). Mice exposed to X-ray, 13 KeV/μm and 50 KeV/μm carbon-ion dose of 7.0-7.5 Gy, 6.5-7.25 Gy and 6.0-6.5 Gy, respectively. One hour before the irradiation, mice were given an intraperitoneal injection of 0.2 ml of either solvent (soybean oil) or melatonin (250 mg/kg, uniform suspension in soybean oil). Mice were observed for mortality over a period of 30 days following irradiation. Results obtained the first year are as follows. The toxicity of melatonin (at a dose 250 mg/kg) intraperitoneal administered to mice could not be observed. A pretreatment of melatonin is effective in protecting mice from lethal damage of low-linear energy transfer (LET) irradiation (X-ray and 13 KeV/μm carbon-ion). In the high-LET irradiated mice with 50 KeV/μm carbon-ion, melatonin exhibited a slight increase in their survival. (author)

  9. ESR investigation of L-α-alanine and sucrose radicals produced by heavy-ion irradiation

    Nakagawa, K.; Sato, Y.

    2005-01-01

    We investigated sucrose and L-α-alanine radicals produced by heavy (particle) ion irradiation with various LETs (linear energy transfer). The impact of the heavy ions on the samples produced stable free radicals, which were analyzed by ESR (electron spin resonance). Identical spectra were measured after one year. The obtained spectral patterns were the same as those for helium (He), carbon (C), and neon (Ne) ions irradiation. The absorbed dose dependences for the irradiated sucrose and alanine samples were examined. The ESR response has a linear relation with the absorbed dose. The ESR response at 60 Gy was slightly lower than a linear line for sucrose; however, the response showed good linearity for the alanine. In addition, the total spin concentration obtained by heavy-ion irradiation correlated logarithmically with the LET. Qualitative ESR analyse showed that the production of sucrose and alanine radicals depended on both different particle irradiation and the LET under the same dose. Thus, the present ESR results imply that sucrose together with L-α-alanine can be used to monitor LET as well as the number of ionizing particle for the production of stable free radicals. (author)

  10. Local structure and defects in ion irradiated KTaO3

    Zhang, F. X.; Xi, J.; Zhang, Y.; Tong, Yang; Xue, H.; Huang, R.; Trautmann, C.; Weber, W. J.

    2018-04-01

    The modification of the local structure in cubic perovskite KTaO3 irradiated with 3 MeV and 1.1 GeV Au ions is studied by Raman and x-ray absorption spectroscopy, complemented by density functional theory (DFT) calculations. In the case of irradiation with 3 MeV Au ions where displacement cascade processes are dominant, the Ta L3-edge x-ray absorption measurements suggest that a peak corresponding to the Ta-O bonds in the TaO6 octahedra splits, which is attributed to the formation of TaK antisite defects that are coupled with oxygen vacancies, V O. This finding is consistent with the DFT calculations. Under irradiation with 1.1 GeV ions, the intense ionization and electronic energy deposition lead to a blue shift and an intensity reduction of active Raman bands. In the case of sequential irradiations, extended x-ray absorption fine structure measurements reveal a decrease in concentration of coupled TaK-V O defects under subsequent irradiation with 1.1 GeV Au ions.

  11. Chromosomal aberrations of the Chinese hamster cell line V79 after irradiation with X-rays and heavy ions

    Mueller, W.

    1985-02-01

    The study on hand examines chromosomal aberrations in Chinese hamster 79 cells. Irradiation involved a number of heavy ions ranging from neon to uranium with an energy variation between 0.3 and 20 MeV/u. Linear energy transfer ranged from 270 to 16,300 keV/μm. X-ray tests were run for reasons of comparison. Experiments showed the following results: 1) Aberration rate increases in dependence of nuclear charge number or LET resp. 2) The distribution of the chromosome-damage instances found differed markedly from corresponding measurements following irradiation with thinly ionizing radiation. In contrast to x-irradiation, it is possible, therefore, to obtain high aberration yields in preparations made immediately after irradiation. 3) The maximum of aberration yield after heavy-ion irradiation could be shown to occur as early as 4h after irradiation. This is true in x-irradiation for but small doses. 4) The radiation-sensitizing effect of caffeine and its action on the repair system of the cell could be confirmed for x-irradiation and could be described for heavy ions for the first time. 5) The radiation-protection effect of cysteamine could be re-affirmed for thinly ionizing radiation, however, it could not be verified for heavy ions. 6) Irradiation of cells by means of particles of a defined range supports the hypothesis that the particularly radiation-sensitive regions of the nucleus membrane constitute the cell's crucial target. (orig./MG) [de

  12. Effects of ion beam irradiation on Oncidium lanceanum

    Zaiton Ahmad; Affrida Abu Hassan; Nurul Aliaa Idris; Mohd Nazir Basiran

    2006-01-01

    Protocorm-like bodies (PLBs) of an orchid (Oncidium lanceanum) were irradiated using 220 MeV 12 C 5+ ion, accelerated by AVF cyclotron at JAEA, Japan in 2005. Five different doses were applied to the PLBs; 0, 1.0, 2.0, 6.0 and 12.0 Gy. Following irradiation, these PLBs were maintained in cultures for germination and multiplication. Irradiation effects on growth and seedling regeneration patterns as well as morphological characteristics of the in vitro cultures were monitored and recorded. In general, average fresh weights of the irradiated PLBs increased progressively by irradiating the explants at 1.0, 2.0 and reached the maximum at 6.0 Gy. The figure however dropped when the explants were irradiated at 12 Gy. Surprisingly, although the highest average fresh weight was recorded on PLBs irradiated at 6.0 Gy, most of these PLBs were not able to regenerate into complete shoots. On average, only 21 seedlings were successfully regenerated from each gram of these PLBs. The highest shoot regeneration was recorded on cultures irradiated at 2.0 Gy in which 102 seedlings were obtained from one gram of the PLBs. Most of the regenerated seedlings have been transferred to glass house for morphological screening. Molecular analysis showed the presence of DNA polymorphisms among the seedlings from different doses

  13. Research progress in plant mutation by combining ion beam irradiations and tissue culture

    Zhou Linbin; Li Wenjian; Qu Ying; Li Ping

    2007-01-01

    About a new mutation breeding method which combines plant tissue culture technique with heavy ion beam irradiations were discussed in this paper with the principles, operation steps, molecular mechanisms, etc. The mutation method developed a few advantages coming from plant tissue culture, which can produce offspring by asexual ways. Meanwhile, using this method, the study of biological effects of high energy particles with different linear energy transfer values on plant tissues or cells can be explored and optimized in theory or practice. (authors)

  14. Hydrogen formation under gamma and heavy ions irradiation of geopolymers

    Chupin, F.; Dannoux-Papin, A.; D'Espinose de Lacaillerie, J.B.; Ngono Ravache, Y.

    2015-01-01

    This study examines the behavior under irradiation of geo-polymer which is not yet well known and attempts to highlight the importance of water radiolysis. For their use as embedding matrices, stability under ionizing radiation as well as low hydrogen gas released must be demonstrated. Different formulations of geo-polymers have been irradiated either with γ-rays ( 60 Co sources) or 75 MeV 36 Ar ions beams and the production of hydrogen released has been quantified. This paper presents the results of gas analysis in order to identify important structural parameters that influence confined water radiolysis. Indeed, a correlation between pore size, water content on one side, and the hydrogen production radiolytic yield (G(H 2 )) on the other side, has been demonstrated. For the 75 MeV 36 Ar ions irradiation, the effect of porosity has not been well emphasized. For both, the results have revealed the water content influence. (authors)

  15. Surface structure modification of single crystal graphite after slow, highly charged ion irradiation

    Alzaher, I.; Akcöltekin, S.; Ban-d'Etat, B.; Manil, B.; Dey, K. R.; Been, T.; Boduch, P.; Rothard, H.; Schleberger, M.; Lebius, H.

    2018-04-01

    Single crystal graphite was irradiated by slow, highly charged ions. The modification of the surface structure was studied by means of Low-Energy Electron Diffraction. The observed damage cross section increases with the potential energy, i.e. the charge state of the incident ion, at a constant kinetic energy. The potential energy is more efficient for the damage production than the kinetic energy by more than a factor of twenty. Comparison with earlier results hints to a strong link between early electron creation and later target atom rearrangement. With increasing ion fluence, the initially large-scale single crystal is first transformed into μ m-sized crystals, before complete amorphisation takes place.

  16. Effects of high-energy (MeV) ion implantation of polyester films

    Ueno, Keiji; Matsumoto, Yasuyo; Nishimiya, Nobuyuki; Noshiro, Mitsuru; Satou, Mamoru

    1991-01-01

    The effects of high-energy ion beam irradiation on polyester (PET) films using a 3 MeV tandem-type ion beam accelerator were studied. O, Ni, Pt, and Au as ion species were irradiated at 10 14 -10 15 ions/cm 2 on 50 μm thick PET films. Physical properties and molecular structure changes were studied by the surface resistivity measurements and RBS. The surface resistivity decreases with an increase in irradiation dose. At 10 15 ions/cm 2 irradiation, the surface resistivity is 10 8 Ω/□. According to RBS and XPS analyses, some carbon and oxygen atoms in the PET are replaced by implanted ions and the -C=O bonds are destroyed easily by the ion beam. (orig.)

  17. Effects of ion beam irradiation on Oncidium lanceanum orchids

    Zaiton Ahmad; Affrida Abu Hassan

    2006-01-01

    Protocorm-like bodies (PLBs) of an orchid (Oncidium lanceanum) were irradiated using 220 MeV 12 C 5+ ions, accelerated by AVF cyclotron at JAEA, Japan in 2005. Five different doses were applied to the PLBs; 0, 1.0, 2.0, 6.0 and 12.0 Gy. Following irradiation, these PLBs were maintained in cultures for germination and multiplication. Irradiation effects on growth and seedling regeneration patterns as well as molecular characteristics of the in vitro cultures were monitored and recorded. In general, average fresh weights of the irradiated PLBs increased progressively by irradiating the explants at 1.0, 2.0 and reached the maximum at 6.0 Gy. The figure however dropped when the explants were irradiated at 12 Gy. Surprisingly, although the highest average fresh weight was recorded on PLBs irradiated at 6.0 Gy, most of these PLBs were not able to regenerate into complete shoots. On average, after 4 months of irradiation, only 21 seedlings were successfully regenerated from each gram of these PLBs. The highest shoot regeneration was recorded on cultures irradiated at 2.0 Gy in which 102 seedlings were obtained from one gram of the PLBs. Some morphological changes were seen on in vitro plantlets derived from PLBs irradiated at doses of 1.0 and 2.0 Gy. Most of the regenerated seedlings have been transferred to glasshouse for further morphological selection. Molecular analysis showed the presence of DNA polymorphisms among the seedlings from different doses of irradiation. (Author)

  18. Development and performance evaluation of a three-dimensional clinostat synchronized heavy-ion irradiation system

    Ikeda, Hiroko; Souda, Hikaru; Puspitasari, Anggraeini; Held, Kathryn D.; Hidema, Jun; Nikawa, Takeshi; Yoshida, Yukari; Kanai, Tatsuaki; Takahashi, Akihisa

    2017-02-01

    Outer space is an environment characterized by microgravity and space radiation, including high-energy charged particles. Astronauts are constantly exposed to both microgravity and radiation during long-term stays in space. However, many aspects of the biological effects of combined microgravity and space radiation remain unclear. We developed a new three-dimensional (3D) clinostat synchronized heavy-ion irradiation system for use in ground-based studies of the combined exposures. Our new system uses a particle accelerator and a respiratory gating system from heavy-ion radiotherapy to irradiate samples being rotated in the 3D clinostat with carbon-ion beams only when the samples are in the horizontal position. A Peltier module and special sample holder were loaded on a static stage (standing condition) and the 3D clinostat (rotation condition) to maintain a suitable temperature under atmospheric conditions. The performance of the new device was investigated with normal human fibroblasts 1BR-hTERT in a disposable closed cell culture chamber. Live imaging revealed that cellular adhesion and growth were almost the same for the standing control sample and rotation sample over 48 h. Dose flatness and symmetry were judged according to the relative density of Gafchromic films along the X-axis and Y-axis of the positions of the irradiated sample to confirm irradiation accuracy. Doses calculated using the carbon-ion calibration curve were almost the same for standing and rotation conditions, with the difference being less than 5% at 1 Gy carbon-ion irradiation. Our new device can accurately synchronize carbon-ion irradiation and simulated microgravity while maintaining the temperature under atmospheric conditions at ground level.

  19. Evaluation of Ion Irradiation Behavior of ODS Alloys

    Jang, Jin Sung; Kim, Min Chul; Hong, Jun Hwa; Han, Chang Hee; Chang, Young Mun; Bae, Chang Soo; Bae, Yoon Young; Chang, Moon Hee

    2006-08-15

    FM steel (Grade 92) and ODS alloy(MA956) specimens were ion irradiated with 122 MeV Ne ions. Irradiation temperatures were about 450 and 550 .deg. C and the peak dose was 1, 5, and 10 dpa. Cross-sectional TEM samples were prepared by the electrolytic Ni-plating after pre-treatment of the irradiated specimens. Irradiation cavities in FM steel and ODS alloy specimens were not much different in size; about 20 nm in diameter in both specimens irradiated at around 450 .deg. C. However, the size distribution of cavities in FM steel specimens was broader than that in ODS alloy specimen, indicating that the cavity growth probably via coalescence). It was noticeable that the location and the preferential growth of the cavities in FM steel specimens: cavities on the PAGB (prior austenite grain boundary) was significantly larger than those within the grains. This could be an important issue for the mechanical properties, especially high temperature creep, fracture toughness, and so on. The dependency of the dose threshold and swelling on the ratio of the inert gas concentration/dpa was analysed for the various irradiation source, including He, Ne, Fe/He, and fast neutron, and the empirical correlation was established.

  20. Evaluation of Ion Irradiation Behavior of ODS Alloys

    Jang, Jin Sung; Kim, Min Chul; Hong, Jun Hwa; Han, Chang Hee; Chang, Young Mun; Bae, Chang Soo; Bae, Yoon Young; Chang, Moon Hee

    2006-08-01

    FM steel (Grade 92) and ODS alloy(MA956) specimens were ion irradiated with 122 MeV Ne ions. Irradiation temperatures were about 450 and 550 .deg. C and the peak dose was 1, 5, and 10 dpa. Cross-sectional TEM samples were prepared by the electrolytic Ni-plating after pre-treatment of the irradiated specimens. Irradiation cavities in FM steel and ODS alloy specimens were not much different in size; about 20 nm in diameter in both specimens irradiated at around 450 .deg. C. However, the size distribution of cavities in FM steel specimens was broader than that in ODS alloy specimen, indicating that the cavity growth probably via coalescence). It was noticeable that the location and the preferential growth of the cavities in FM steel specimens: cavities on the PAGB (prior austenite grain boundary) was significantly larger than those within the grains. This could be an important issue for the mechanical properties, especially high temperature creep, fracture toughness, and so on. The dependency of the dose threshold and swelling on the ratio of the inert gas concentration/dpa was analysed for the various irradiation source, including He, Ne, Fe/He, and fast neutron, and the empirical correlation was established

  1. Stored energy in irradiated silicon carbide

    Snead, L.L.; Burchell, T.D. [Oak Ridge National Lab., TN (United States)

    1997-04-01

    This report presents a short review of the phenomenon of Wigner stored energy release from irradiated graphite and discusses it in relation to neutron irradiation of silicon carbide. A single published work in the area of stored energy release in SiC is reviewed and the results are discussed. It appears from this previous work that because the combination of the comparatively high specific heat of SiC and distribution in activation energies for recombining defects, the stored energy release of SiC should only be a problem at temperatures lower than those considered for fusion devices. The conclusion of this preliminary review is that the stored energy release in SiC will not be sufficient to cause catastrophic heating in fusion reactor components, though further study would be desirable.

  2. 130 MeV Au ion irradiation induced dewetting on In2Te3 thin film

    Matheswaran, P.; Abhirami, K.M.; Gokul, B.; Sathyamoorthy, R.; Prakash, Jai; Asokan, K.; Kanjilal, D.

    2012-01-01

    Highlights: ► In 2 Te 3 phase formed from In/Te bilayer by 130 MeV Au ion irradiation. ► Lower fluence results mixed phases with initial state of dewetting. ► At higher fluence, In 2 Te 3 phase with complete dewetting pattern is formed. ► Thermal spike model is used to explain the inter face mixing phenomena. ► SHI irradiation may be used to functionalize the structural and surface properties of thin films. - Abstract: In/Te bilayer thin films were prepared by sequential thermal evaporation and subsequently irradiated by 130 MeV Au ions. The pristine and irradiated samples were characterized by X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) techniques. RBS spectra reveal the sputtering of Te film and interface mixing, with increasing fluence. The surface morphology showed the beginning of dewetting of Te thin film and formation of the partially connected with the mixed zones at the fluence of 1 × 10 13 ions/cm 2 . At the higher fluence of 3 × 10 13 ions/cm 2 , dewetted structures were isolated at the surface. Above results are explained based on the formation of craters, sputtering and dewetting followed by inter-diffusion at the interface of molten zones due to thermal spike induced by Au ions.

  3. Quartz modification by Zn ion implantation and swift Xe ion irradiation

    Privezentsev, Vladimir [Institute of Physics and Technology, Russian Academy of Sciences, Moscow (Russian Federation); Kulikauskas, Vaclav [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University (Russian Federation); Didyk, Alexander; Skuratov, Vladimir [Joint Institute of Nuclear Research, Dubna (Russian Federation); Steinman, Edward; Tereshchenko, Alexey; Kolesnikov, Nikolay [Institute of Solid-State Physics, Russian Academy of Sciences, Chernogolovka (Russian Federation); Trifonov, Alexey; Sakharov, Oleg [National Research University ' ' MIET' ' , Zelenograd, Moscow (Russian Federation); Ksenich, Sergey [National University of Science and Technology ' ' MISiS' ' , Moscow (Russian Federation)

    2017-07-15

    The quartz slides were implanted by {sup 64}Zn{sup +} ions with dose of 5 x 10{sup 16}/cm{sup 2} and energy of 100 keV. After implantation, the amorphous metallic Zn nanoparticles with an average radius of 3.5 nm were created. The sample surface becomes nonuniform, its roughness is increased and its values rise up to 6 nm compared to virgin state, and the roughness maximum is at a value of about 0.8 nm. The surface is made up of valleys and hillocks which have a round shape with an average diameter about 200 nm. At the center of these hillocks are pores with a depth up to 6 nm and a diameter of about 20 nm. After implantation in UV-vis diapason, the optical transmission decreases while PL peak (apparently due to oxygen deficient centers) at wavelength of 400 nm increases. Then the samples were subjected to swift Xe ion irradiation with the fluences of 1 x 10{sup 12}-7.5 x 10{sup 14}/cm{sup 2} and energy of 167 MeV. After Xe irradiation, the sample surface roughness shat down to values of 0.5 nm and the roughness maximum is at a value of about 0.1 nm. Optical transmission in UV-vis diapason increases. The PL peak at wavelength of 400 nm is decreased while a PL peak at wavelength of 660 nm is raised. This peak is presumably due to non-bridging oxygen hole centers or/and NPs with structure Si(core)/SiO{sub 2}(shell). HRTEM image of Zn-implanted quartz subsurface layer. One can see the Zn amorphous nanoparticles, which confirms the electron diffraction pattern (insert). (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Effect of electron-excitation on radiation damage in ion-irradiated FCC metals

    Iwase, Akihiro

    1989-06-01

    FCC metals (Al, Cu, Ag, Ni) were irradiated with 0.5-1.8 MeV H, He, N and Ar ions, and 84-126 MeV C, F, Si, Cl, Br and I ions at liquid helium temperatures. After the irradiations, thermal annealing experiments were performed up to 300 K. Anomalous reduction of Stage-I recovery was observed in Al and Ni irradiated with high-energy (∼100 MeV) heavy ions. Radiation annealing by 100 MeV I ions was studied in predoped Ni and Cu. The experimental results were analyzed by using a new model which describes the production and radiation annealing of two or more types of defects. The extraordinarily large cross sections for subthreshold recombination of Stage-I defects were obtained in Ni. These results show that in Al and Ni, the energies transferred from the excited electrons to lattice through the electron-lattice interaction contribute to the annihilations of defects during irradiation. (author)

  5. Irradiation effects of swift heavy ions in matter

    Osmani, Orkhan

    2011-12-22

    In the this thesis irradiation effects of swift heavy ions in matter are studied. The focus lies on the projectiles charge exchange and energy loss processes. A commonly used computer code which employs rate equations is the so called ETACHA code. This computer code is capable to also calculate the required input cross-sections. Within this thesis a new model to compute the charge state of swift heavy ions is explored. This model, the so called matrix method, takes the form of a simple algebraic expression, which also requires cross-sections as input. In the present implementation of the matrix method, cross-sections are taken from the ETACHA code, while excitation and deexcitation processes are neglected. Charge fractions for selected ion/target combinations, computed by the ETACHA code and the matrix method are compared. It is shown, that for sufficient large ion energies, both methods agree very well with each other. However, for lower energies pronounced differences are observed. These differences are believed to stem from the fact, that no excited states as well as the decay of theses excited states are included in the present implementation of the matrix method. Both methods are then compared with experimental measurements, where significant deviations are observed for both methods. While the predicted equilibrium charge state by both methods is in good agreement with the experiments, the matrix method predicts a much too large equilibrium thickness compared to both the ETACHA calculation as well as the experiment. Again, these deviations are believed to stem from the fact, that excitation and the decay of excited states are not included in the matrix method. A possible way to include decay processes into the matrix method is presented, while the accuracy of the applied capture cross-sections is tested by comparison with scaling rules. Swift heavy ions penetrating a dielectric are known to induced structural modifications both on the surface and in the bulk

  6. Irradiation effects of swift heavy ions in matter

    Osmani, Orkhan

    2011-01-01

    In the this thesis irradiation effects of swift heavy ions in matter are studied. The focus lies on the projectiles charge exchange and energy loss processes. A commonly used computer code which employs rate equations is the so called ETACHA code. This computer code is capable to also calculate the required input cross-sections. Within this thesis a new model to compute the charge state of swift heavy ions is explored. This model, the so called matrix method, takes the form of a simple algebraic expression, which also requires cross-sections as input. In the present implementation of the matrix method, cross-sections are taken from the ETACHA code, while excitation and deexcitation processes are neglected. Charge fractions for selected ion/target combinations, computed by the ETACHA code and the matrix method are compared. It is shown, that for sufficient large ion energies, both methods agree very well with each other. However, for lower energies pronounced differences are observed. These differences are believed to stem from the fact, that no excited states as well as the decay of theses excited states are included in the present implementation of the matrix method. Both methods are then compared with experimental measurements, where significant deviations are observed for both methods. While the predicted equilibrium charge state by both methods is in good agreement with the experiments, the matrix method predicts a much too large equilibrium thickness compared to both the ETACHA calculation as well as the experiment. Again, these deviations are believed to stem from the fact, that excitation and the decay of excited states are not included in the matrix method. A possible way to include decay processes into the matrix method is presented, while the accuracy of the applied capture cross-sections is tested by comparison with scaling rules. Swift heavy ions penetrating a dielectric are known to induced structural modifications both on the surface and in the bulk

  7. The stopping power and energy straggling of the energetic C and O ions in polyimide

    Mikšová, Romana; Macková, Anna; Slepička, P.

    2016-01-01

    Roč. 371, MAR (2016), s. 81-85 ISSN 0168-583X. [22nd International conference on Ion Beam Analysis (IBA). Opatija, 14.06.2015-19.06.2015] R&D Projects: GA MŠk(CZ) LM2011019; GA ČR GA15-01602S Institutional support: RVO:61389005 Keywords : ion energy loss * ion energy straggling * ion irradiated polymers Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.109, year: 2016

  8. Reduction and structural modification of zirconolite on He{sup +} ion irradiation

    Gupta, Merry, E-mail: g41merry@gmail.com [Sant Longowal Institute of Engineering and Technology, Longowal, Sangrur, Punjab 148106 (India); Kulriya, P.K. [Inter-University Accelerator Centre, Aruna Asaf Ali Road, New Delhi 110067 (India); Department of Mechanical, Aerospace & Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180 (United States); Shukla, Rishabh; Dhaka, R.S. [Novel Materials and Interface Physics Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India); Kumar, Raj [Inter-University Accelerator Centre, Aruna Asaf Ali Road, New Delhi 110067 (India); Ghumman, S.S. [Sant Longowal Institute of Engineering and Technology, Longowal, Sangrur, Punjab 148106 (India)

    2016-07-15

    The immobilization of minor actinides and alkaline-earth metal is a major concern in nuclear industry due to their long-term radioactive contribution to the high level waste (HLW). Materials having zirconolite, pyrochlore, and perovskite structure are promising candidates for immobilization of HLW. The zirconolite which exhibits high radiation stability and corrosion resistance behavior is investigated for its radiation stability against alpha particles in the present study. CaZrTi{sub 2}O{sub 7} pellets prepared using solid state reaction techniques, were irradiated with 30 keV He{sup +} ions for the ion fluence varying from 1 × 10{sup 17} to 1 × 10{sup 21} ions/m{sup 2}. Scanning electron microscopy (SEM) images of the un-irradiated sample exhibited well separated grains with average size of about 6.8 μm. On the ion irradiation, value of the average grains size was about 7.1 μm, and change in the microstructure was insignificant. The X-ray photoelectron spectroscopy (XPS) studies showed a shift in the core level peak position (of Ca 2p, Ti 2p and Zr 3d) towards lower binding energy with respect to pristine sample as well as loss of oxygen was also observed for sample irradiated with the ion fluence of 1 × 10{sup 20} ions/m{sup 2}. These indicate a decrease in co-ordination number and the ionic character of M−O bond. Moreover, core level XPS signal was not detected for sample irradiated with ion fluence of 1 × 10{sup 21} ions/m{sup 2}, suggesting surface damage of the sample at this ion fluence. However, X-ray diffraction (XRD) studies showed that zirconolite was not amorphized even on irradiation up to a fluence order of 1 × 10{sup 21} ion/m{sup 2}. But, significant decrease in peak intensity due to creation of defects and a marginal positive peak shift due to tensile strain induced by irradiation, were observed. Thus, XRD along with XPS investigation suggests that reduction, decrease in co-ordination number, and increase in covalency are responsible for

  9. Study of the degradation process of polyimide induced by high energetic ion irradiation

    Severin, Daniel

    2008-01-01

    has to be expected above a dose of 1 MGy. b) The dielectric relaxation spectroscopy indicates a dramatic increase in the conductivity induced by irradiation with heavy ions which pass a threshold of mass and deposited energy (dE/dx). The phenomenon indicates that only a few hits (fluences of 10 10 ion/cm 2 ) of a heavy high energetic ion leads to a significant increase of conductivity. c) The degradation induced formation of small molecules and their outgassing even at cryogenic temperature cause a gas release during irradiation. At temperatures below 20 K, an additional accumulation of these molecules in the bulk material occurs and leads to a critical gas evolution during heat-up cycles. (orig.)

  10. Study of the degradation process of polyimide induced by high energetic ion irradiation

    Severin, Daniel

    2008-09-19

    critical material degradation which has to be expected above a dose of 1 MGy. b) The dielectric relaxation spectroscopy indicates a dramatic increase in the conductivity induced by irradiation with heavy ions which pass a threshold of mass and deposited energy (dE/dx). The phenomenon indicates that only a few hits (fluences of 10{sup 10} ion/cm{sup 2}) of a heavy high energetic ion leads to a significant increase of conductivity. c) The degradation induced formation of small molecules and their outgassing even at cryogenic temperature cause a gas release during irradiation. At temperatures below 20 K, an additional accumulation of these molecules in the bulk material occurs and leads to a critical gas evolution during heat-up cycles. (orig.)

  11. Effects on focused ion beam irradiation on MOS transistors

    Campbell, A.N.; Peterson, K.A.; Fleetwood, D.M.; Soden, J.M.

    1997-01-01

    The effects of irradiation from a focused ion beam (FIB) system on MOS transistors are reported systematically for the first time. Three MOS transistor technologies, with 0.5, 1, and 3 μm minimum feature sizes and with gate oxide thicknesses ranging from 11 to 50 nm, were analyzed. Significant shifts in transistor parameters (such as threshold voltage, transconductance, and mobility) were observed following irradiation with a 30 keV Ga + focused ion beam with ion doses varying by over 5 orders of magnitude. The apparent damage mechanism (which involved the creation of interface traps, oxide trapped charge, or both) and extent of damage were different for each of the three technologies investigated

  12. High energy heavy ion beam lithography in silicon

    Rout, Bibhudutta; Dymnikov, Alexander D.; Zachry, Daniel P.; Eschenazi, Elia V.; Wang, Yongqiang Q.; Greco, Richard R.; Glass, Gary A.

    2007-01-01

    As high energy ions travel through a crystalline semiconductor materials they produce damage along the path which results in resistance to some of the wet chemical etching. A series of preliminary experiments have been performed at the Louisiana Accelerator Center (LAC) to examine the feasibility of irradiating high energy (keV-MeV) ions such as protons, xenon and gold through microscale masked structures on crystalline (n-type) Si substrates followed by wet chemical etch with KOH for attaining deep micromachining in Si. The results of these experiments are reported

  13. Structural and optical modification in 4H-SiC following 30 keV silver ion irradiation

    Kaushik, Priya Darshni; Aziz, Anver; Siddiqui, Azher M.; Lakshmi, G. B. V. S.; Syväjärvi, Mikael; Yakimova, Rositsa; Yazdi, G. Reza

    2018-05-01

    The market of high power, high frequency and high temperature based electronic devices is captured by SiC due to its superior properties like high thermal conductivity and high sublimation temperature and also due to the limitation of silicon based electronics in this area. There is a need to investigate effect of ion irradiation on SiC due to its application in outer space as outer space is surrounded both by low and high energy ion irradiations. In this work, effect of low energy ion irradiation on structural and optical property of 4H-SiC is investigated. ATR-FTIR is used to study structural modification and UV-Visible spectroscopy is used to study optical modifications in 4H-SiC following 30 keV Ag ion irradiation. FTIR showed decrease in bond density of SiC along the ion path (track) due to the creation of point defects. UV-Visible absorption spectra showed decrease in optical band gap from 3.26 eV to 2.9 eV. The study showed degradation of SiC crystallity and change in optical band gap following low energy ion irradiation and should be addressed while fabricationg devices based on SiC for outer space application. Additionally, this study provides a platform for introducing structural and optical modification in 4H-SiC using ion beam technology in a controlled manner.

  14. Anisotropic deformation of metallo-dielectric core-shell colloids under MeV ion irradiation

    Penninkhof, J.J.; Dillen, T. van; Roorda, S.; Graf, C.; Blaaderen, A. van; Vredenberg, A.M.; Polman, A.

    2006-01-01

    We have studied the deformation of metallo-dielectric core-shell colloids under 4 MeV Xe, 6 and 16 MeV Au, 30 MeV Si and 30 MeV Cu ion irradiation. Colloids of silica surrounded by a gold shell, with a typical diameter of 400 nm, show anisotropic plastic deformation under MeV ion irradiation, with the metal flowing conform the anisotropically deforming silica core. The 20 nm thick metal shell imposes a mechanical constraint on the deforming silica core, reducing the net deformation strain rate compared to that of pure silica. In colloids consisting of a Au core and a silica shell, the silica expands perpendicular to the ion beam, while the metal core shows a large elongation along the ion beam direction, provided the silica shell is thick enough (>40 nm). A minimum electronic energy loss of 3.3 keV/nm is required for shape transformation of the metal core. Silver cores embedded in a silica shell show no elongation, but rather disintegrate. Also in planar SiO 2 films, Au and Ag colloids show entirely different behavior under MeV irradiation. We conclude that the deformation model of core-shell colloids must include ion-induced particle disintegration in combination with thermodynamical effects, possibly in combination with mechanical effects driven by stresses around the ion tracks

  15. Anisotropic deformation of metallo-dielectric core shell colloids under MeV ion irradiation

    Penninkhof, J. J.; van Dillen, T.; Roorda, S.; Graf, C.; van Blaaderen, A.; Vredenberg, A. M.; Polman, A.

    2006-01-01

    We have studied the deformation of metallo-dielectric core-shell colloids under 4 MeV Xe, 6 and 16 MeV Au, 30 MeV Si and 30 MeV Cu ion irradiation. Colloids of silica surrounded by a gold shell, with a typical diameter of 400 nm, show anisotropic plastic deformation under MeV ion irradiation, with the metal flowing conform the anisotropically deforming silica core. The 20 nm thick metal shell imposes a mechanical constraint on the deforming silica core, reducing the net deformation strain rate compared to that of pure silica. In colloids consisting of a Au core and a silica shell, the silica expands perpendicular to the ion beam, while the metal core shows a large elongation along the ion beam direction, provided the silica shell is thick enough (>40 nm). A minimum electronic energy loss of 3.3 keV/nm is required for shape transformation of the metal core. Silver cores embedded in a silica shell show no elongation, but rather disintegrate. Also in planar SiO2 films, Au and Ag colloids show entirely different behavior under MeV irradiation. We conclude that the deformation model of core-shell colloids must include ion-induced particle disintegration in combination with thermodynamical effects, possibly in combination with mechanical effects driven by stresses around the ion tracks.

  16. Nitric oxide-mediated bystander signal transduction induced by heavy-ion microbeam irradiation

    Tomita, Masanori; Matsumoto, Hideki; Funayama, Tomoo; Yokota, Yuichiro; Otsuka, Kensuke; Maeda, Munetoshi; Kobayashi, Yasuhiko

    2015-07-01

    In general, a radiation-induced bystander response is known to be a cellular response induced in non-irradiated cells after receiving bystander signaling factors released from directly irradiated cells within a cell population. Bystander responses induced by high-linear energy transfer (LET) heavy ions at low fluence are an important health problem for astronauts in space. Bystander responses are mediated via physical cell-cell contact, such as gap-junction intercellular communication (GJIC) and/or diffusive factors released into the medium in cell culture conditions. Nitric oxide (NO) is a well-known major initiator/mediator of intercellular signaling within culture medium during bystander responses. In this study, we investigated the NO-mediated bystander signal transduction induced by high-LET argon (Ar)-ion microbeam irradiation of normal human fibroblasts. Foci formation by DNA double-strand break repair proteins was induced in non-irradiated cells, which were co-cultured with those irradiated by high-LET Ar-ion microbeams in the same culture plate. Foci formation was suppressed significantly by pretreatment with an NO scavenger. Furthermore, NO-mediated reproductive cell death was also induced in bystander cells. Phosphorylation of NF-κB and Akt were induced during NO-mediated bystander signaling in the irradiated and bystander cells. However, the activation of these proteins depended on the incubation time after irradiation. The accumulation of cyclooxygenase-2 (COX-2), a downstream target of NO and NF-κB, was observed in the bystander cells 6 h after irradiation but not in the directly irradiated cells. Our findings suggest that Akt- and NF-κB-dependent signaling pathways involving COX-2 play important roles in NO-mediated high-LET heavy-ion-induced bystander responses. In addition, COX-2 may be used as a molecular marker of high-LET heavy-ion-induced bystander cells to distinguish them from directly irradiated cells, although this may depend on the time

  17. Irradiation influence on Mylar and Makrofol induced by argon ions in a plasma immersion ion implantation system

    Hassan, A. [Accelerators & Ion Sources Department, Nuclear Research Center, Atomic Energy Authority, P.O. 13759, Cairo (Egypt); El-Saftawy, A.A., E-mail: aama1978@yahoo.com [Accelerators & Ion Sources Department, Nuclear Research Center, Atomic Energy Authority, P.O. 13759, Cairo (Egypt); Aal, S.A. Abd El [Central Lab. for Elemental & Isotopic Analysis, Nuclear Research Center, Atomic Energy Authority, P.O. 13759, Cairo (Egypt); Ghazaly, M. El [Physiology Department, College of Medicine, Taif University, P.O. 888, Taif (Saudi Arabia); Physics Department, Faculty of Science, Zagazig University, P.O. 44519, Zagazig (Egypt)

    2015-08-30

    Highlights: • A home-built plasma immersion ion implantation system was tested in modifying surfaces. • Wettability modifications within the energy range 10 keV implantation are not investigated elsewhere, up to our knowledge. • The wettability of Mylar and Makrofol surface was enhanced by the dual effect of ion implantation and plasma treatment. • The improved wettability was found to depend on both surface roughness and chemistry. • The adhesive bonding and surface energy of the polymers are improved. - Abstract: Mylar and Makrofol polycarbonate polymers were irradiated by Ar ions in a plasma immersion ion implantation (PIII) system. The surface wettability of both polymers was investigated by employing the contact angle method. The measured contact angles were found to depend on the surface layer properties. Good wetting surfaces were found to depend not only on surface roughness but also on its chemistry that analyzed by Fourier transform infrared (FTIR) spectroscopy. Surfaces topography and roughness was investigated and correlated to their surface energy which studied with the aid of acid-base model for evaluating the improvement of surface wettability after irradiation. PIII improves polymers surface properties efficiently in a controllable way.

  18. Kr ion irradiation study of the depleted-uranium alloys

    Gan, J.; Keiser, D. D.; Miller, B. D.; Kirk, M. A.; Rest, J.; Allen, T. R.; Wachs, D. M.

    2010-12-01

    Fuel development for the reduced enrichment research and test reactor (RERTR) program is tasked with the development of new low enrichment uranium nuclear fuels that can be employed to replace existing high enrichment uranium fuels currently used in some research reactors throughout the world. For dispersion type fuels, radiation stability of the fuel-cladding interaction product has a strong impact on fuel performance. Three depleted-uranium alloys are cast for the radiation stability studies of the fuel-cladding interaction product using Kr ion irradiation to investigate radiation damage from fission products. SEM analysis indicates the presence of the phases of interest: U(Al, Si) 3, (U, Mo)(Al, Si) 3, UMo 2Al 20, U 6Mo 4Al 43 and UAl 4. Irradiations of TEM disc samples were conducted with 500 keV Kr ions at 200 °C to ion doses up to 2.5 × 10 19 ions/m 2 (˜10 dpa) with an Kr ion flux of 10 16 ions/m 2/s (˜4.0 × 10 -3 dpa/s). Microstructural evolution of the phases relevant to fuel-cladding interaction products was investigated using transmission electron microscopy.

  19. Kr ion irradiation study of the depleted-uranium alloys

    Gan, J., E-mail: Jian.Gan@inl.go [Idaho National Laboratory, P.O. Box 1625, Idaho Falls, ID 83415-6188 (United States); Keiser, D.D. [Idaho National Laboratory, P.O. Box 1625, Idaho Falls, ID 83415-6188 (United States); Miller, B.D. [University of Wisconsin, 1500 Engineering Drive, Madison, WI 53706 (United States); Kirk, M.A.; Rest, J. [Argonne National Laboratory, 9700 South Cass Ave., Argonne, IL 60439 (United States); Allen, T.R. [University of Wisconsin, 1500 Engineering Drive, Madison, WI 53706 (United States); Wachs, D.M. [Idaho National Laboratory, P.O. Box 1625, Idaho Falls, ID 83415-6188 (United States)

    2010-12-01

    Fuel development for the reduced enrichment research and test reactor (RERTR) program is tasked with the development of new low enrichment uranium nuclear fuels that can be employed to replace existing high enrichment uranium fuels currently used in some research reactors throughout the world. For dispersion type fuels, radiation stability of the fuel-cladding interaction product has a strong impact on fuel performance. Three depleted-uranium alloys are cast for the radiation stability studies of the fuel-cladding interaction product using Kr ion irradiation to investigate radiation damage from fission products. SEM analysis indicates the presence of the phases of interest: U(Al, Si){sub 3}, (U, Mo)(Al, Si){sub 3}, UMo{sub 2}Al{sub 20}, U{sub 6}Mo{sub 4}Al{sub 43} and UAl{sub 4}. Irradiations of TEM disc samples were conducted with 500 keV Kr ions at 200 {sup o}C to ion doses up to 2.5 x 10{sup 19} ions/m{sup 2} ({approx}10 dpa) with an Kr ion flux of 10{sup 16} ions/m{sup 2}/s ({approx}4.0 x 10{sup -3} dpa/s). Microstructural evolution of the phases relevant to fuel-cladding interaction products was investigated using transmission electron microscopy.

  20. Damage studies on tungsten due to helium ion irradiation

    Dutta, N.J.; Buzarbaruah, N.; Mohanty, S.R.

    2014-01-01

    Highlights: • Used plasma focus helium ion source to study radiation induced damage on tungsten. • Surface analyses confirm formation of micro-crack, bubbles, blisters, pinholes, etc. • XRD patterns confirm development of compressive stress due to thermal load. • Reduction in hardness value is observed in the case of exposed sample. - Abstract: Energetic and high fluence helium ions emitted in a plasma focus device have been used successfully to study the radiation induced damage on tungsten. The reference and irradiated samples were characterized by optical microscopy, field emission scanning electron microscopy, X-ray diffraction and by hardness testers. The micrographs of the irradiated samples at lower magnification show uniform mesh of cracks of micrometer width. However at higher magnification, various types of crystalline defects such as voids, pinholes, bubbles, blisters and microcracks are distinctly noticed. The prominent peaks in X-ray diffraction spectrum of irradiated samples are seen shifted toward higher Bragg angles, thus indicating accumulation of compressive stress due to the heat load delivered by helium ions. A marginal reduction in hardness of the irradiated sample is also noticed

  1. Nanostructure evolution in ODS steels under ion irradiation

    S. Rogozhkin

    2016-12-01

    In this work, we carried out atom probe tomography (APT and transmission electron microscopy (TEM studies of three different ODS steels produced by mechanical alloying: ODS Eurofer, 13.5Cr ODS and 13.5Cr-0.3Ti ODS. These materials were investigated after irradiation with Fe (5.6MeV or Ti (4.8MeV ions up to 1015ion/cm2 and part of them up to 3×1015ion/cm2. In all cases, areas for TEM investigation were cut at a depth of ∼ 1.3µm from the irradiated surface corresponding to the peak of the radiation damage dose. It was shown that after irradiation at RT and at 300°С the number density of oxide particles in all the samples grew up. Meanwhile, the fraction of small particles in the size distribution has increased. APT revealed an essential increase in nanoclusters number and a change of their chemical composition at the same depth. The nanostructure was the most stable in 13.5Cr-0.3Ti ODS irradiated at 300°С: the increase of the fraction of small oxides was minimal and no change of nanocluster chemical composition was detected.

  2. Design of the IMP microbeam irradiation system for 100 MeV/u heavy ions

    Sheng Lina; Song Mingtao; Zhang Xiaoqi; Yang Xiaotian; Gao Daqing; He Yuan; Zhang Bin; Liu Jie; Sun Youmei; Dang Bingrong; Lwenjian; Su Hong; Man Kaidi; Guo Yizhen; Wang Zhiguang; Zhan Wenlong

    2009-01-01

    A state-of-the-art high energy heavy ion microbeam irradiation system is constructed at the Institute of Modern Physics of the Chinese Academy of Sciences. This microbeam system operates in both full current intensity mode and single ion mode. It delivers a predefined number of ions to pre-selected targets for research in biology and material science. The characteristic of this microbeam system is high energy and vertical irradiation. A quadrupole focusing system, in combination with a series of slits, has been designed to optimize the spatial resolution. A symmetrically achromatic system leads the beam downwards and serves simultaneously as an energy analyzer. A high gradient quadrupole triplet finally focuses a C 6+ ion beam to 1 μm in the vacuum chamber within the energy range from 10 MeV/u to 100 MeV/u. In this paper, the IMP microbeam system is described in detail. A systematic investigation of the ion beam optics of this microbeam system is presented together with the associated aberrations. Comparison is made between the IMP microbeam system and the other existing systems to further discuss the performance of this microbeam. Then the optimized initial beam parameters are given for high resolution and high hitting efficiency. At last, the experiment platform is briefly introduced. (authors)

  3. Collisions of low-energy multicharged ions

    Phaneuf, R.A.; Crandall, D.H.

    1981-01-01

    Experimental measurements of cross sections for collisions of multiply charged ions with atoms at the lowest attainable collision energies are reported. Emphasis is on electron capture from hydrogen atoms by multiply charged ions at energies below 1 keV/amu. The principal effort is the development of a merged-ion-atom-beams apparatus for studies down to 1 eV/amu relative energy

  4. Thermal stability of low dose Ga+ ion irradiated spin valves

    Qi Xianjin; Wang Yingang; Zhou Guanghong; Li Ziquan

    2009-01-01

    The thermal stability of low dose Ga + ion irradiated spin valves has been investigated and compared with that of the as-prepared ones. The dependences of exchange field, measured using vibrating sample magnetometer at room temperature, on magnetic field sweep rate and time spent at negative saturation of the pinned ferromagnetic layer, and training effect were explored. The training effect is observed on both the irradiated spin valves and the as-prepared ones. The magnetic field sweep rate dependence of the exchange bias field of the irradiated spin valves is nearly the same as that of the as-prepared ones. For the as-prepared structure thermal activation has been observed, which showed that holding the irradiated structure at negative saturation of the pinned ferromagnetic layer for up to 28 hours results in no change in the exchange field. The results indicate that the thermal stability of the ion irradiated spin valves is the same as or even better than the as-prepared ones.

  5. Damage of plasmid DNA by high energy ions

    Michaelidesova, A.; Pachnerova Brabcova, K.; Davidkova, M.

    2018-01-01

    The aim of the study was to determine the degree of direct DNA damage by high-energy ions, which are one of the components of cosmic rays, and therefore the knowledge of the biological effects of these ions is key to long-term space missions with human crew. The pBR322 plasmid containing 4361 base pairs was used in this study. The aqueous solution of plasmid pBR322 was transferred on ice to Japan to the Heavy Ion Medical Accelerator in Chiba, the Research Center for Charged Particle Therapy. Just before the experiment, the droplets of solution of known concentration were applied to the slides and the water was allowed to evaporate to produce dry DNA samples. Half of the slides were irradiated with 290 MeV/u of carbon ions and a dose rate of 20 Gy/min. The other half of the slides were irradiated with helium nuclei of 150 MeV/hr and a dose rate of 12.6 Gy/min. Both sets of slides were irradiated with doses of 0-1,400 Gy with a 200 Gy step. After irradiation, the samples were re-dissolved in distilled water, frozen and transported on ice to the Czech Republic for processing. Samples were analyzed by agarose gel electrophoresis. The plasmid was evaluated separately to determine the degree of radiation induced lesions and further to incubation with enzymes recognizing basal damage. (authors)

  6. Moessbauer study of amorphous alloys irradiated with energetic heavy ions

    Kuzmann, E.; Spirov, I.N.

    1984-01-01

    The Moessbauer spectroscopy was applied to study radiation damages in amorphous alloys irradiated with 40 Ar (E=225 MeV) or 132 Xe (E=120 MeV) ions at room temperature. In the magnetically splitted Moessbauer spectra the dose-dependent decreases of the intensity of the 2nd and 5th lines as well as of the average hyperfine magnetic field were observed. The changes weAe also analysed using the hyperfine field distribution obtained from the spectra. The results are interpreted in terms of defect creation and structural changes of shortrange order of irradiated amorphoys alloys

  7. Ripple structures on surfaces and underlying crystalline layers in ion beam irradiated Si wafers

    Grenzer, J.; Muecklich, A. [Forschungszentrum Rossendorf, Institut fuer Ionenstrahlphysik und Materialforschung, Dresden (Germany); Biermanns, A.; Grigorian, S.A.; Pietsch, U. [Institute of Physics, University of Siegen (Germany)

    2009-08-15

    We report on the formation of ion beam induced ripples in Si(001) wafers when bombarded with Ar+ ions at an energy of 60 keV. A set of samples varying incidence and azimuthal angles of the ion beam with respect to the crystalline surface orientation was studied by two complementary near surface sensitive techniques, namely atomic force microscopy and depth-resolved X-ray grazing incidence diffraction (GID). Additionally, cross-section TEM investigations were carried out. The ripple-like structures are formed at the sample surface as well as at the buried amorphous-crystalline interface. Best quality of the ripple pattern was found when the irradiating ion beam was aligned parallel to the (111) planes. The quality decreases rapidly if the direction of the ion beam deviates from (111). (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  8. In-situ high temperature irradiation setup for temperature dependent structural studies of materials under swift heavy ion irradiation

    Kulriya, P.K.; Kumari, Renu; Kumar, Rajesh; Grover, V.; Shukla, R.; Tyagi, A.K.; Avasthi, D.K.

    2015-01-01

    An in-situ high temperature (1000 K) setup is designed and installed in the materials science beam line of superconducting linear accelerator at the Inter-University Accelerator Centre (IUAC) for temperature dependent ion irradiation studies on the materials exposed with swift heavy ion (SHI) irradiation. The Gd 2 Ti 2 O 7 pyrochlore is irradiated using 120 MeV Au ion at 1000 K using the high temperature irradiation facility and characterized by ex-situ X-ray diffraction (XRD). Another set of Gd 2 Ti 2 O 7 samples are irradiated with the same ion beam parameter at 300 K and simultaneously characterized using in-situ XRD available in same beam line. The XRD studies along with the Raman spectroscopic investigations reveal that the structural modification induced by the ion irradiation is strongly dependent on the temperature of the sample. The Gd 2 Ti 2 O 7 is readily amorphized at an ion fluence 6 × 10 12 ions/cm 2 on irradiation at 300 K, whereas it is transformed to a radiation-resistant anion-deficient fluorite structure on high temperature irradiation, that amorphized at ion fluence higher than 1 × 10 13 ions/cm 2 . The temperature dependent ion irradiation studies showed that the ion fluence required to cause amorphization at 1000 K irradiation is significantly higher than that required at room temperature irradiation. In addition to testing the efficiency of the in-situ high temperature irradiation facility, the present study establishes that the radiation stability of the pyrochlore is enhanced at higher temperatures

  9. Separation and recovery of dioxins using a heavy ion irradiation film

    Takahashi, S; Iida, S; Ohbayashi, Y [Meiji Univ., Kawasaki, Kanagawa (Japan). Faculty of Engineering

    2004-02-01

    It is demonstrated that halogenated dioxin and its derivatives can be separated from polluted aqueous solutions using pervaporation technique with a nanopore membrane fabricated by heavy-ion beam irradiation. The concentration of dioxin in the sample solution was set below 1 ppm. Polyethyleneterphthalate membrane was used. The membrane was first irradiated with high energy Xe-ions of 450 MeV with a fluence of 3 x 10{sup 3} to 3 x 10{sup 9} ions/cm{sup 2} using TIARA facility of JAERI Takasaki, etched with 6 mol/l NaOH solution resulting in formation of pores with diameter ranging from several to 40 nm, followed by grafting with monomers having affinity to dioxin. Dibenzo-p-dioxin was used to obtain permeability data. Separation factor obtained were within the range from 10 to 50. (S. Ohno)

  10. Enhanced photoelectrochemical properties of 100 MeV Si8+ ion irradiated barium titanate thin films

    Solanki, Anjana; Choudhary, Surbhi; Satsangi, Vibha R.; Shrivastav, Rohit; Dass, Sahab

    2013-01-01

    Highlights: ► Effect of 100 MeV Si 8+ ion irradiation on photoelectrochemical (PEC) properties of BaTiO 3 thin films was studied. ► Films were deposited on Indium doped Tin Oxide (ITO) coated glass by sol–gel spin coating technique. ► Optimal irradiation fluence for best PEC response was 5 × 10 11 ion cm −2 . ► Maximum photocurrent density was observed to be 0.7 mA cm −2 at 0.4 V/SCE. ► Enhanced photo-conversion efficiency was due to maximum negative flatband potential, donor density and lowest resistivity. -- Abstract: Effects of high electronic energy deposition on the structure, surface topography, optical property and photoelectrochemical behavior of barium titanate (BaTiO 3 ) thin films were investigated by irradiating films with 100 MeV Si 8+ ions at different ion fluences in the range of 1 × 10 11 –2 × 10 13 ions cm −2 . BaTiO 3 thin films were deposited on indium tin oxide coated glass substrate by sol gel spin coating method. Irradiation induced modifications in the films were analyzed using the results from XRD, SEM, cross sectional SEM, AFM and UV–Vis spectrometry. Maximum photocurrent density of 0.7 mA cm −2 at 0.4 V/SCE and applied bias hydrogen conversion efficiency (ABPE) of 0.73% was observed for BaTiO 3 film irradiated at 5 × 10 11 ions cm −2 , which can be attributed to maximum negative value of the flatband potential and donor density and lowest resistivity

  11. Hardness and depth-dependent microstructure of ion-irradiated MgAl2O4

    Zinkle, S.J.

    1988-01-01

    Stoichiometric polycrystalline magnesium aluminate spinel has been irradiated at 25 and 650/degree/C with 2.4 MeV Mg/sup plus/ ions to a fluence of 1.4 /times/ 10 21 ions/m 2 (/approximately/35 dpa peak damage level). Microindentation hardness measurements and transmission electron microscopy combined with energy dispersive X-ray spectroscopy measurements were used to characterize the irradiation effects. The room-temperature hardness of spinel increased by about 5% after irradiation at both temperatures. There was no evidence for amorphization at either irradiation temperature. Interstitial-type dislocations loops lying on /l brace/110/r brace/ and /l brace/111/r brace/ planes with Burgers vectors were observed at intermediate depths (/approximately/1 μm) along the ion range. The /l brace/111/r brace/ loops are presumably formed from /l brace/111/r brace/ loops as a result of a shear on the anion sublattice. Only about 0.05% of the calculated displacements were visible in the form of loops, which indicates that spinel has a high resistance to aggregate damage accumulation. The peak damage region contained a high density of dislocations tangles. There was no evidence for the formation of voids or vacancy loops. The specimen irradiated at 650/degree/C was denuded of dislocation loops within /approximately/1 μm of the surface. 25 refs., 16 figs., 5 tabs

  12. Aqueous marker penetration into ion irradiated polyimide

    Fink, D.; Muller, M.; Petrov, A.; Klett, R.; Palmetshofer, L.; Hnatowicz, Vladimír; Vacík, Jiří; Červená, Jarmila; Chadderton, L. T.

    2002-01-01

    Roč. 191, - (2002), s. 662-668 ISSN 0168-583X R&D Projects: GA AV ČR IAA7011908 Keywords : transport * energy * mass Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.158, year: 2002

  13. Effects of cavitation on damage calculations in ion-irradiated P7 alloy

    Sindelar, R.L.; Farrens, S.N.; Kulcinski, G.L.

    1985-01-01

    The purpose of this study is to investigate the effect of voids on the depth-dependent damage energy in ion-irradiated metals. Corrections to the dose at the swelling peak will be used to obtain the swelling rate of ion-irradiated 316-type stainless steels. Samples of the P7 alloy were ion-irradiated to four fluence levels up to a peak dose level of 100 dpa at 650 0 C. The depth-dependent void parameters extracted in cross section were used to model the effect of voids on the depth-dependent damage produced during 14 MeV nickel ion irradiation. An increase in the range of damage produced from the original foil surface for the target containing voids was modeled as a first-order correction to the damage profile. A second-order effect, void straggling, was shown to cause a time-dependent decrease in the damage rate at the peak swelling depth. Corrections applied to the dose at the peak swelling depth yield swelling rates approaching 0.7%/dpa

  14. Shaping of Au nanoparticles embedded in various layered structures by swift heavy ion beam irradiation

    Dawi, E.A., E-mail: elmuez.dawi@gmail.com [Ajman University of Science and Technology, Basic Science and Education, Physics Department, P.O. Box 346 (United Arab Emirates); Debye Institute for Nanomaterials, Nanophotonics Section, Utrecht University, P.O. Box 80000, 3508 TA Utrecht (Netherlands); ArnoldBik, W.M. [Eindhoven University of Technology, Irradiation Technology, 5600 GM Eindhoven (Netherlands); Ackermann, R.; Habraken, F.H.P.M. [Debye Institute for Nanomaterials, Nanophotonics Section, Utrecht University, P.O. Box 80000, 3508 TA Utrecht (Netherlands)

    2016-10-01

    We present a novel method to extend the ion-beam induced shaping of metallic nanoparticles in various layered structures. Monodisperse Au nanoparticles having mean diameter of 30 nm and their ion-shaping process is investigated for a limited number of experimental conditions. Au nanoparticles were embedded within a single plane in various layered structures of silicon nitride films (Si{sub 3}N{sub 4}), combinations of oxide-nitride films (SiO{sub 2}-Si{sub 3}N{sub 4}) and amorphous silicon films (a-Si) and have been sequentially irradiated at 300 K at normal incidence with 50 and 25 MeV Ag ions, respectively. Under irradiation with heavy Ag ions and with sequential increase of the irradiation fluence, the evolution of the Au peak derived from the Rutherford Backscattering Spectrometry show broadening in Au peak, which indicates that the Au becomes distributed over a larger depth region, indicative of the elongation of the nanoparticles. The latter is observed almost for every layer structure investigated except for Au nanoparticles embedded in pure a-Si matrix. The largest elongation rate at all fluences is found for the Au nanoparticles encapsulated in pure Si{sub 3}N{sub 4} films. For all irradiation energy applied, we again demonstrate the existence of both threshold and saturation fluences for the elongation effects mentioned.

  15. Effect for hydrogen, nitrogen, phosphorous, and argon ions irradiation on ZnO NWs

    Ishaq, A.; Usman, M.; Dee, C. F.; Khurram, A. A.; Yan, L.; Zhou, X. T.; Nadeem, A.; Naseem, S.; Rafique, H. M.; Majlis, B. Y.

    2013-01-01

    Zinc oxide (ZnO) nanowires (NWs) are exposed to energetic proton (H + ), nitrogen (N + ), phosphorus (P + ), and argon (Ar + ) ions to understand the radiation hardness and structural changes induced by these irradiations. High-resolution transmission electron microscopy is utilized to see the irradiation effects in NWs. Multiple doses and energies of radiation at different temperatures are used for different set of samples. The study reveals that wurtzite (crystalline)-structured ZnO NWs experience amorphization, degradation, and morphological changes after the irradiation. At room temperature, deterioration of the crystalline structure is observed under high fluence of H + , N + , and P + ions. While for ZnO NWs, bombarded by Ar + and P + ions, nano-holes are produced. The ZnO NWs surfaces also show corrugated morphology full of nano-humps when irradiated by Ar + ions at 400 °C. The corrugated surface could serve as tight-holding interface when interconnecting it with other NWs/nanotubes. These nano-humps may have the function of increasing the surface for surface-oriented sensing applications in the future.

  16. Effect for hydrogen, nitrogen, phosphorous, and argon ions irradiation on ZnO NWs

    Ishaq, A., E-mail: ishaq_ah@yahoo.com; Usman, M. [National Centre for Physics, Quaid-i-Azam University, Experimental Physics Labs (Pakistan); Dee, C. F. [Universiti Kebangsaan Malaysia (UKM), Institute of Microengineering and Nanoelectronics (IMEN) (Malaysia); Khurram, A. A. [National Centre for Physics, Quaid-i-Azam University, Experimental Physics Labs (Pakistan); Yan, L., E-mail: yanlong@sinap.ac.cn; Zhou, X. T. [Chinese Academy of Sciences, Shanghai Institute of Applied Physics (China); Nadeem, A.; Naseem, S. [University of the Punjab, Centre of Excellence in Solid State Physics (Pakistan); Rafique, H. M. [University of the Punjab, Department of Physics (Pakistan); Majlis, B. Y. [Universiti Kebangsaan Malaysia (UKM), Institute of Microengineering and Nanoelectronics (IMEN) (Malaysia)

    2013-04-15

    Zinc oxide (ZnO) nanowires (NWs) are exposed to energetic proton (H{sup +}), nitrogen (N{sup +}), phosphorus (P{sup +}), and argon (Ar{sup +}) ions to understand the radiation hardness and structural changes induced by these irradiations. High-resolution transmission electron microscopy is utilized to see the irradiation effects in NWs. Multiple doses and energies of radiation at different temperatures are used for different set of samples. The study reveals that wurtzite (crystalline)-structured ZnO NWs experience amorphization, degradation, and morphological changes after the irradiation. At room temperature, deterioration of the crystalline structure is observed under high fluence of H{sup +}, N{sup +}, and P{sup +} ions. While for ZnO NWs, bombarded by Ar{sup +} and P{sup +} ions, nano-holes are produced. The ZnO NWs surfaces also show corrugated morphology full of nano-humps when irradiated by Ar{sup +} ions at 400 Degree-Sign C. The corrugated surface could serve as tight-holding interface when interconnecting it with other NWs/nanotubes. These nano-humps may have the function of increasing the surface for surface-oriented sensing applications in the future.

  17. Radiation tolerance of nanostructured ZrN coatings against swift heavy ion irradiation

    Janse van Vuuren, A.; Skuratov, V.A.; Uglov, V.V.; Neethling, J.H.; Zlotski, S.V.

    2013-01-01

    Nano-structured zirconium nitride layers – on Si substrates – of various thicknesses (0.1, 3, 10 and 20 μm) were irradiated with 167 MeV Xe, 250 MeV Kr and 695 MeV Bi ions to fluences in the range from 3 × 10 12 to 2.6 × 10 15 cm −2 for Xe, 1 × 10 13 to 7.06 × 10 13 cm −2 for Kr and 10 12 to 10 13 cm −2 for Bi. The purpose of these irradiation experiments is to simulate the effects of fission fragment bombardment on nanocrystalline ZrN. The irradiated layers where subsequently analysed by X-ray diffraction (XRD), transmission electron microscopy (TEM) and nano-indentation hardness testing (NIH) techniques. XRD, TEM and NIH results indicate that ZrN has a very high tolerance to the effects of high energy irradiation

  18. Enhanced AC conductivity and dielectric relaxation properties of polypyrrole nanoparticles irradiated with Ni12+ swift heavy ions

    Hazarika, J.; Kumar, A.

    2014-01-01

    In this paper, we report the 160 MeV Ni 12+ swift heavy ions (SHIs) irradiation effects on AC conductivity and dielectric relaxation properties of polypyrrole (PPy) nanoparticles in the frequency range of 42 Hz–5 MHz. Four ion fluences of 5 × 10 10 , 1 × 10 11 , 5 × 10 11 and 1 × 10 12 ions/cm 2 have been used for the irradiation purpose. Transport properties in the pristine and irradiated PPy nanoparticles have been investigated with permittivity and modulus formalisms to study the polarization effects and conductivity relaxation. With increasing ion fluence, the relaxation peak in imaginary modulus (M ″ ) plots shifts toward high frequency suggesting long range motion of the charge carriers. The AC conductivity studies suggest correlated barrier hopping as the dominant transport mechanism. The hopping distance (R ω ) of the charge carriers decreases with increasing the ion fluence. Binding energy (W m ) calculations depict that polarons are the dominant charge carriers

  19. 160 MeV Ni12+ ion irradiation effects on the structural, optical and electrical properties of spherical polypyrrole nanoparticles

    Hazarika, J.; Kumar, A.

    2014-01-01

    Highlights: • Upon SHI irradiation the average diameters of PPy nanoparticles increases. • Crystallinity of PPy nanoparticles increases with increasing ion fluence. • IR active vibrational bands have different cross sections for SHI irradiation. • Upon SHI irradiation optical band gap energy of PPy nanoparticles decreases. • Upon SHI irradiation thermal stability of PPy nanoparticles increases. -- Abstract: In this study we report 160 MeV Ni 12+ swift heavy ion irradiation induced enhancement in the structural, optical and electrical properties of spherical polypyrrole (PPy) nanoparticles. High resolution transmission electron microscope results show that the pristine PPy nanoparticles have an average diameter of 11 nm while upon irradiation the average diameter increases to 18 nm at the highest ion fluence of 1 × 10 12 ions/cm 2 . X-ray diffraction studies show an enhancement of crystallinity and average crystallite size of PPy nanoparticles with increasing fluence. Studies of Fourier transform infrared spectra suggest the structural modifications of different functional groups upon irradiation. It also reveals that different functional groups have different sensitivity to irradiation. The infrared active N–H vibrational band at 3695 cm −1 is more sensitive to irradiation with a formation cross-section of 5.77 × 10 −13 cm 2 and effective radius of 4.28 nm. The UV–visible absorption spectra of PPy nanoparticles show that the absorption band undergoes a red shift with increasing fluence. Moreover upon irradiation the optical band gap energy decreases and Urbach’s energy increases with fluence. Thermo-gravimetric analysis studies suggest that upon irradiation the thermal stability of PPy nanoparticles increases which may be attributed to their enhanced crystallinity. Current–voltage characteristics of PPy nanoparticles exhibit non-Ohmic, symmetric behavior which increases with fluence

  20. Ion beam irradiation of ceramics at fusion relevant conditions

    Zinkle, S.J.

    1991-01-01

    Ceramic materials are required at a variety of locations in proposed fusion reactors where significant ionizing and displacive fields may be present. Energetic ion beams are a useful tool for probing the effects of irradiation on the structure and electrical properties of ceramics over a wide range of experimental conditions. The advantages and disadvantages of using ion beams to provide information on anticipated ceramic radiation effects in a fusion reactor environment are discussed. In this paper particular emphasis is placed on microstructural changes and how the high helium generation rates associated with DT fusion neutrons affect cavity swelling

  1. Switching the uniaxial magnetic anisotropy by ion irradiation induced compensation

    Yuan, Ye; Amarouche, Teyri; Xu, Chi; Rushforth, Andrew; Böttger, Roman; Edmonds, Kevin; Campion, Richard; Gallagher, Bryan; Helm, Manfred; Jürgen von Bardeleben, Hans; Zhou, Shengqiang

    2018-04-01

    In the present work, the uniaxial magnetic anisotropy of GaMnAsP is modified by helium ion irradiation. According to the micro-magnetic parameters, e.g. resonance fields and anisotropy constants deduced from ferromagnetic resonance measurements, a rotation of the magnetic easy axis from out-of-plane [0 0 1] to in-plane [1 0 0] direction is achieved. From the application point of view, our work presents a novel avenue in modifying the uniaxial magnetic anisotropy in GaMnAsP with the possibility of lateral patterning by using lithography or focused ion beam.

  2. High ion temperatures from buried layers irradiated with Vulcan Petawatt

    Karsch, S.; Schreiber, J.; Willingale, L.; Lancaster, K.; Habara, H.; Nilson, P.; Gopal, A.; Wei, M. S.; Stoeckl, C.; Evans, R.; Clarke, R.; Heathcote, R.; Najmudin, Z.; Krushelnick, K.; Neely, D.; Norreys, P. A.

    2005-01-01

    Deuteron acceleration from CH/CD/CH layer targets irradiated with PW laser pulses has been studied using. Thomson parabola spectrometers and neutron TOF spectroscopy. The measured ion and neutron spectra reveal significant MeV deuteron acceleration from the deeply buried CD layer, which scales with the thickness of the overlying CH layer. While the neutron spectra reveal the scaling of the thermal heating with target thickness, the ion spectra indicate the presence of an efficient nonthermal acceleration mechanism inside. the bulk. Possible explanations will be discussed. (Author)

  3. Interdiffusion and grain-boundary migration in Au-Cu bilayers during ion-irradiation

    Alexander, D.E.; Rehn, L.E.; Baldo, P.M.

    1991-11-01

    Ion irradiation and annealing experiments have been conducted on Au/Cu bilayer films to evaluate the effect of irradiation on diffusion-induced grain boundary migration (DIGM). The Au films were prepared with a large-grained microstructure with grain boundaries perpendicular to the film surface and extending through the film thickness. Irradiations were conducted with 1.5 MeV Kr at 228 degree C. Rutherford backscattering spectrometry of the samples revealed that interdiffusion was substantially enhanced in the irradiated area relative to the unirradiated area. Both irradiated and annealed-only areas were characterized by a nearly uniform composition of 14 at.% and 7 at.% Cu respectively through the entire thickness of the underlying Au film. Small probe X-ray energy dispersive spectroscopy showed significant lateral compositional homogeneities in both irradiated and annealed areas. These two results are consistent with previous observations of DIGM in the Au/Cu system, suggesting that this previously unexamined mechanism contributes to ion beam mixing

  4. ECR ion source for variable energy cyclotron

    Bose, D K; Taki, G S; Nabhiraj, P Y; Pal, G; Dasgupta, B; Mallik, C; Das, S K; Bandopadhaya, D K; Bhandari, R K [Variable Energy Cyclotron Centre, Calcutta (India)

    1995-09-01

    Some performance characteristics of 6.4 GHz two stage ECR ion source which was under development at this centre is presented. The present ion source will facilitate acceleration of light heavy ions with the existing k=130 variable energy cyclotron. Multiply charged heavy ion (MCHI) beam from the source will also be utilized for atomic physics studies. Oxygen beam has already been used for ion implantation studies. The external injection system under development is nearing completion. Heavy ion beam from cyclotron is expected by end of 1995. (author).

  5. Ion irradiation and thermal cycling tests of TiC coatings

    Yamanaka, S.; Ohara, H.; Son, P.; Miyake, M.

    1984-01-01

    Ion irradiation of TiC coatings prepared by diffusion annealing was performed with 20-40 keV He + ions for different doses at room temperature. The polished TiCsub(0.99) coatings irradiated with 40 keV He + ions showed the surface damage and erosion due to blistering and exfoliation above a dose of 1.8x10 17 ions/cm 2 , whereas no change in the surface morphology could be detected for the as-prepared coatings up to a dose of 1.4x10 18 ions/cm 2 . The results suggested that surface erosion due to blistering can be effectively reduced on the rough surface of the as-prepared TiC coating. The average blister diameter in the polished TiCsub(0.99) coating increased with increasing projectile energy. For the 40 keV He + ion irradiation of the polished TiCsub(0.5) coatings, general features in blisters were similar to those observed for the TiCsub(0.99) coatings, but the critical dose for blistering shifted to a higher value in comparison with the polished TiCsub(0.99) coating. Thermal cycling between 500 and 1200 0 C caused serious surface damage for the TiCsub(0.99) coating irradiated with 40 keV He + ions below the critical dose for blistering, while the coating with surface damage due to blistering showed no significant change in the surface topography after thermal cycling. (orig.)

  6. Temperature and ion-mass dependence of amorphization dose for ion beam irradiated zircon (ZrSiO4)

    Wang, L.M.; Ewing, R.C.; Eby, R.K.

    1992-12-01

    The temperature dependence of amorphization dose for zircon under 1.5 MeV Kr ion irradiation has been investigated using the ANL HVEM-Tandem Facility. Three regimes were observed in the amorphization dose-temperature curve. In the first regime (15 to 300 K), the critical amorphization dose increased from 3.06 to 4.5 ions/nm 2 . In the second regime (300 to 473 K), there is little change in the amorphizationdose. In the third regime (> 473 K), the amorphization dose increased exponentially to 8.3 ions/nm 2 at 913 K. This temperature dependence of amorphization dose can be described by two processes with different activation energies (0.018 and 0.31 eV respectively) which are attributed to close pair recombination in the cascades at low temperatures and radiation-enhanced epitaxial recrystallization at higher temperatures. The upper temperature limit for amorphization of zircon is estimated to be 1100 K. The ion-mass dependence of the amorphization dose (in dpa) has also been discussed in terms of the energy to recoils based on data obtained from He, Ne, Ar, Kr, Xe irradiations and a 238 Pu-doped sample

  7. Swift heavy ion irradiation of CaF2 - from grooves to hillocks in a single ion track

    Gruber, Elisabeth; Salou, Pierre; Bergen, Lorenz; El Kharrazi, Mourad; Lattouf, Elie; Grygiel, Clara; Wang, Yuyu; Benyagoub, Abdenacer; Levavasseur, Delphine; Rangama, Jimmy; Lebius, Henning; Ban-d'Etat, Brigitte; Schleberger, Marika; Aumayr, Friedrich

    2016-10-01

    A novel form of ion-tracks, namely nanogrooves and hillocks, are observed on CaF2 after irradiation with xenon and lead ions of about 100 MeV kinetic energy. The irradiation is performed under grazing incidence (0.3°-3°) which forces the track to a region in close vicinity to the surface. Atomic force microscopy imaging of the impact sites with high spatial resolution reveals that the surface track consists in fact of three distinct parts: each swift heavy ion impacting on the CaF2 surface first opens a several 100 nm long groove bordered by a series of nanohillocks on both sides. The end of the groove is marked by a huge single hillock and the further penetration of the swift projectile into deeper layers of the target is accompanied by a single protrusion of several 100 nm in length slowly fading until the track vanishes. By comparing experimental data for various impact angles with results of a simulation, based on a three-dimensional version of the two-temperature-model (TTM), we are able to link the crater and hillock formation to sublimation and melting processes of CaF2 due to the local energy deposition by swift heavy ions.

  8. Formation of complex precursors of amino acids by irradiation of simulated interstellar media with heavy ions

    Kobayashi, K.; Suzuki, N.; Taniuchi, T.; Kaneko, T.; Yoshida, S.

    A wide variety of organic compounds have been detected in such extraterrestrial bodies as meteorites and comets Amino acids were identified in the extracts from Murchison meteorite and other carbonaceous chondrites It is hypothesized that these compounds are originally formed in ice mantles of interstellar dusts ISDs in molecular clouds by cosmic rays and ultraviolet light UV Formation of amino acid precursors by high energy protons or UV irradiation of simulated ISDs was reported by several groups The amino acid precursors were however not well-characterized We irradiated a frozen mixture of methanol ammonia and water with heavy ions to study possible organic compounds abiotically formed in molecular clouds by cosmic rays A mixture of methanol ammonia and water was irradiated with carbon beams 290 MeV u from a heavy ion accelerator HIMAC of National Institute of Radiological Sciences Japan Irradiation was performed either at room temperature liquid phase or at 77 K solid phase The products were characterized by gel filtration chromatography GFC FT-IR pyrolysis PY -GC MS etc Amino acids were analyzed by HPLC and GC MS after acid hydrolysis or the products Amino acids such as glycine and alanine were identified in the products in both the cases of liquid phase and solid phase irradiation Energy yields G-values of glycine were 0 014 liquid phase and 0 007 solid phase respectively Average molecular weights of the products were estimated as to 2300 in both the case Aromatic hydrocarbons N-containing heterocyclic

  9. Medium-energy ion reflection from solids

    Mashkova, ES

    1985-01-01

    ``Medium-Energy Ion Reflection from Solids'' analyses the results of experimental, theoretical and computer investigations on the process of scattering of ions by solid surfaces. Surface scattering is a relatively young and rapidly developing branch of the physics of atomic collisions and the literature on this subject has rapidly grown.As the first monograph devoted specifically to surface scattering of ions, this book is directed at scientists involved in ion-solid interaction studies.

  10. Study on structural recovery of graphite irradiated with swift heavy ions at high temperature

    Pellemoine, F., E-mail: pellemoi@frib.msu.edu [Facility for Rare Isotope Beams, Michigan State University, East Lansing, MI 48824 (United States); Avilov, M. [Facility for Rare Isotope Beams, Michigan State University, East Lansing, MI 48824 (United States); Bender, M. [Dept. of Materials Research, GSI Helmholtzzentrum für Schwerionenforschung, Planckstr. 1, Darmstadt 64291 (Germany); Ewing, R.C. [Dept. of Geological Sciences, Stanford University, Stanford, CA 94305-2115 (United States); Fernandes, S. [Facility for Rare Isotope Beams, Michigan State University, East Lansing, MI 48824 (United States); Lang, M. [Dept. of Nuclear Engineering, University of Tennessee, Knoxville, TN 37996-2300 (United States); Li, W.X. [Dept. of Geological Sciences, Stanford University, Stanford, CA 94305-2115 (United States); Mittig, W. [Facility for Rare Isotope Beams, Michigan State University, East Lansing, MI 48824 (United States); National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, MI 48824-1321 (United States); Schein, M. [Facility for Rare Isotope Beams, Michigan State University, East Lansing, MI 48824 (United States); Severin, D. [Dept. of Materials Research, GSI Helmholtzzentrum für Schwerionenforschung, Planckstr. 1, Darmstadt 64291 (Germany); Tomut, M. [Dept. of Materials Research, GSI Helmholtzzentrum für Schwerionenforschung, Planckstr. 1, Darmstadt 64291 (Germany); Laboratory of Magnetism and Superconductivity, National Institute for Materials Physics NIMP, Bucharest (Romania); Trautmann, C. [Dept. of Materials Research, GSI Helmholtzzentrum für Schwerionenforschung, Planckstr. 1, Darmstadt 64291 (Germany); Dept. of Materials Science, Technische Universität Darmstadt, Darmstadt (Germany); and others

    2015-12-15

    Thin graphite foils bombarded with an intense high-energy (8.6 MeV/u) gold beam reaching fluences up to 1 × 10{sup 15} ions/cm{sup 2} lead to swelling and electrical resistivity changes. As shown earlier, these effects are diminished with increasing irradiation temperature. The work reported here extends the investigation of beam induced changes of these samples by structural analysis using synchrotron X-ray diffraction and transmission electron microscope. A nearly complete recovery from swelling at irradiation temperatures above about 1500 °C is identified.

  11. On-line Raman spectroscopy of calcite and malachite during irradiation with swift heavy ions

    Dedera, Sebastian; Burchard, Michael; Glasmacher, Ulrich A.; Schöppner, Nicole; Trautmann, Christina; Severin, Daniel; Romanenko, Anton; Hubert, Christian

    2015-01-01

    A new on-line Raman System, which was installed at the M3-beamline at the UNILAC, GSI Helmholtzzentrum für Schwerionenforschung Darmstadt was used for first “in situ” spectroscopic measurements. Calcite and malachite samples were irradiated in steps between 1 × 10"9 and 1 × 10"1"2 ions/cm"2 with Au ions (calcite) and Xe ions (malachite) at an energy of 4.8 MeV/u. After irradiation, calcite revealed a new Raman band at 437 cm"−"1 and change of the full width at half maximum for the 1087 cm"−"1 Raman band. The Raman bands of malachite change significantly with increasing fluence. Up to a fluence of 7 × 10"1"0 ions/cm"2, all existing bands decrease in intensity. Between 8 × 10"1"0 and 1 × 10"1"1 ions/cm"2 a broad Cu_2O band between 110 and 220 cm"−"1 occurs, which superimposes the pre-existing Raman bands. Additionally, a new broad band between 1000 and 1750 cm"−"1 is formed, which is interpreted as a carbon coating. In contrast to the Cu_2O band, the carbon band vanished when further irradiating the sample. The installations as well as first in situ measurements at room temperature are presented.

  12. Ion irradiation of AZO thin films for flexible electronics

    Boscarino, Stefano; Torrisi, Giacomo; Crupi, Isodiana [IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy); Alberti, Alessandra [CNR-IMM, via Strada VIII 5, 95121 Catania (Italy); Mirabella, Salvatore; Ruffino, Francesco [IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy); Terrasi, Antonio, E-mail: antonio.terrasi@ct.infn.it [IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy)

    2017-02-01

    Highlights: • Evidence of electrical good quality AZO ultra thin films without thermal annealing. • Evidence of the main role of Oxygen vs. structural parameters in controlling the electrical performances of AZO. • Evidence of the role of the ion irradiation in improving the electrical properties of AZO ultra thin films. • Synthesis of AZO thin films on flexible/plastic substrates with good electrical properties without thermal processes. - Abstract: Aluminum doped Zinc oxide (AZO) is a promising transparent conductor for solar cells, displays and touch-screen technologies. The resistivity of AZO is typically improved by thermal annealing at temperatures not suitable for plastic substrates. Here we present a non-thermal route to improve the electrical and structural properties of AZO by irradiating the TCO films with O{sup +} or Ar{sup +} ion beams (30–350 keV, 3 × 10{sup 15}–3 × 10{sup 16} ions/cm{sup 2}) after the deposition on glass and flexible polyethylene naphthalate (PEN). X-ray diffraction, optical absorption, electrical measurements, Rutherford Backscattering Spectrometry and Atomic Force Microscopy evidenced an increase of the crystalline grain size and a complete relief of the lattice strain upon ion beam irradiation. Indeed, the resistivity of thin AZO films irradiated at room temperature decreased of two orders of magnitude, similarly to a thermal annealing at 400 °C. We also show that the improvement of the electrical properties does not simply depend on the strain or polycrystalline domain size, as often stated in the literature.

  13. Investigation of radiative charging of dielectrics irradiated by ions

    Dergobuzov, K.A.; Yalovets, A.P.

    1994-01-01

    Within the framework of the Gusel'nikov mathematical model are fulflled numerical investigations of charging dielectrics irradiated with ions and atoms. The model accounts for dynamics of quasi-free charge carriers of each sign with account of processes of dielectrics ionization with a beam, charge recombination and charge drift in an electric fields. The effective mobility of charge carriers is determined with account for its dependence on the dose rate

  14. Using ion irradiation to make high-Tc Josephson junctions

    Bergeal, N.; Lesueur, J.; Sirena, M.; Faini, G.; Aprili, M.; Contour, J. P.; Leridon, B.

    2007-01-01

    In this article we describe the effect of ion irradiation on high-T c superconductor thin film and its interest for the fabrication of Josephson junctions. In particular, we show that these alternative techniques allow to go beyond most of the limitations encountered in standard junction fabrication methods, both in the case of fundamental and technological purposes. Two different geometries are presented: a planar one using a single high-T c film and a mesa one defined in a trilayer structure

  15. Investigations on carbon cluster formation in heavy ion irradiated polymers

    Tripathy, S.P.; Mishra, R.; Mawar, A.K.; Dwivedi, K.K.; Khathing, D.T.; Srivastava, A.; Avasthi, D.K.; Ghosh, S.; Fink, D.

    2000-01-01

    In polymers, the carbonaceous clusters are supposed to be responsible for the electrical conductivity. So, the irradiation of organic polymers namely polypropylene (8μ) and polyimide (50μ) by energetic heavy ions 28 Si and 58 Ni produce significant changes in the size of these clusters leading to the corresponding change in the band gap and other electrical properties as revealed by the UV-VIS spectroscopic examinations. (author)

  16. Effect of microstructure on light ion irradiation creep in nickel

    Henager, C.H. Jr.; Simonen, E.P.; Bradley, E.R.; Stang, R.G.

    1983-01-01

    The concept of inhomogeneous slip or localized deformation is introduced to account for a weak dependence of irradiation creep on initial microstructure. Specimens of pure nickel (Ni) with three different microstructures were irradiated at 473 K with 15-17 MeV deuterons in the Pacific Northwest Laboratory (PNL) light ion irradiation creep apparatus. A dispersed barrier model for Climb-Glide (CG) creep was unable to account for the observed creep rates and creep strains. The weak dependence on microstructure was consistent with the Stress Induced Preferential Absorption (SIPA) creep mechanism but a high stress enhanced bias had to be assumed to account for the creep rates. Also, SIPA was unable to account for the observed creep strains. The CG and SIPA modeling utilized rate theory calculations of point defect fluxes and transmission electron microscopy for sink sizes and densities. (orig.)

  17. [Grain boundary and interface kinetics during ion irradiation

    Atwater, H.A.

    1991-01-01

    Proposed here is renewed support of a research program focused on interface motion and phase transformation during ion irradiation, with emphasis on elemental semiconductors. Broadly speaking, the aims of this program are to explore defect kinetics in amorphous and crystalline semiconductors, and to relate defect dynamics to interface motion and phase transformations. Over the last three years, we initiated a program under DOE support to explore crystallization and amorphization of elemental semiconductors under irradiation. This research has enabled new insights about the nature of defects in amorphous semiconductors and about microstructural evolution in the early stages of crystallization. In addition, we have demonstrated almost arbitrary control over the relative rates of crystal nucleation and crystal growth in silicon. As a result, the impinged grain microstructure of thin (100 nm) polycrystalline films crystallized under irradiation can be controlled with grain sizes ranging from a few nanometers to several micrometers, which may have interesting technological implications

  18. Effects of microstructure on light ion irradiation creep in nickel

    Henager, C.H. Jr.; Simonen, E.P.; Bradley, E.R.; Stang, R.G.

    1982-10-01

    The concept of inhomogeneous slip or localized deformation is introduced to account for a weak dependence of irradiation creep on initial microstructure. Specimens of pure Ni with three different microstructures were irradiated at 473 0 K with 15 to 17 MeV deuterons in the PNL light ion irradiation creep apparatus. A dispersed barrier model for climb-glide creep was unable to account for the observed creep rates and creep strains. The weak dependence on microstructure was consistent with the SIPA creep mechanism but a high stress enhanced bias had to be assumed to account for the creep rates. Also, SIPA was unable to account for the observed creep strains. The modeling utilized rate theory calculations of point defect fluxes and transmission electron microscopy for sink sizes and densities

  19. Energy straggling of heavy ions in solids

    Cowern, N.E.B.

    1979-08-01

    The energy-loss straggling of heavy ions has been studied, principally in the Born Approximation region v > zv 0 . Measurements were made with 5.486 MeV α particles, 5 - 48 MeV 16 0 ions, and 3 - 36 MeV 12 C ions, incident on thin uniform Al foils. The thickness uniformity of the foils was studied with a proton microbeam and a surface profiler, and their homogeneity, purity and isotropy were investigated by electron microscope, proton backscattering, and X-ray diffraction studies. Using the Bethe theory of energy loss the charge-exchange model of energy straggling for heavy ions is confirmed. (author)

  20. Positron Annihilation Study of Ion-irradiated Si

    Shin, Jung Ki; Kwon, Jun Hyun; Lee, Jong Yong

    2009-01-01

    Structural parts like a spaceship, satellite and solar cell are composed of metal alloy or semiconductor materials. Especially, Si is used as a primary candidate alloy. But, manned and robotic missions to the Earth's moon and Mars are exposed to a continuous flux of Galactic Cosmic Rays (GCR) and occasional, but intense, fluxes of Solar Energetic Particles. These natural radiations impose hazards to manned exploration. Irradiation of cosmic particle induces various changes in the mechanical and physical properties of device steels. It is, therefore, important to investigate radiation damage to the component materials in semiconductor. The evolution of radiation-induced defects leads to degradation of the mechanical properties. One of them includes irradiation embrittlement, which can cause a loss of ductility and further increase the probability of a brittle fracture. It can be more dangerous in the space. Positron annihilation lifetime spectroscopy(PALS) have been applied to investigate the production of vacancy-type defects for Ion-irradiated Si wafer penetrated by H, He, O and Fe ions. Then, we carried out a comparison with an un-irradiated Si wafer

  1. Effect of Ion Irradiation in Cadmium Niobate Pyrochlores

    Jiang, Weilin; Weber, William J.; Thevuthasan, Suntharampillai; Boatner, Lynn A.

    2003-01-01

    Irradiation experiments have been performed for cadmium niobate pyrochlore (CdNb2O) single crystals at both 150 and 300 K using 1.0 MeV Au ions over fluences ranging from 0.01 to 0.10 ions/nm. In-situ 3.0 MeV He Rutherford backscattering spectrometry along the -axial channeling direction (RBS/C) has been applied to study the damage states ranging from small defect concentrations to a fully amorphous state. Results show that the crystal can be readily amorphized under the irradiation conditions. Room-temperature recovery of the defects produced at 150 K has been observed, while the defects produced at 300 K are thermally stable at room temperature. Results also indicate that the RBS/C analysis used in this study induced negligible damage in the near-surface regime. In addition, irradiation at and below room temperature using He and C3 ions leads to surface exfoliation at the corresponding damage peaks

  2. Elastic wave from fast heavy ion irradiation on solids

    Kambara, T; Kanai, Y; Kojima, T M; Nanai, Y; Yoneda, A; Yamazaki, Y

    2002-01-01

    To study the time-dependent mechanical effects of fast heavy ion irradiations, we have irradiated various solids by a short-bunch beam of 95 MeV/u Ar ions and observed elastic waves generated in the bulk. The irradiated targets were square-shaped plates of poly-crystals of metals (Al and Cu), invar alloy, ceramic (Al sub 2 O sub 3), fused silica (SiO sub 2) and single crystals of KC1 and LiF with a thickness of 10 mm. The beam was incident perpendicular to the surface and all ions were stopped in the target. Two piezo-electric ultrasonic sensors were attached to the surface of the target and detected the elastic waves. The elastic waveforms as well as the time structure and intensity of the beam bunch were recorded for each shot of a beam bunch. The sensor placed opposite to the beam spot recorded a clear waveform of the longitudinal wave across the material, except for the invar and fused silica targets. From its propagation time along with the sound velocity and the thickness of the target, the depth of the...

  3. Ion irradiation of AZO thin films for flexible electronics

    Boscarino, Stefano; Torrisi, Giacomo; Crupi, Isodiana; Alberti, Alessandra; Mirabella, Salvatore; Ruffino, Francesco; Terrasi, Antonio

    2017-02-01

    Aluminum doped Zinc oxide (AZO) is a promising transparent conductor for solar cells, displays and touch-screen technologies. The resistivity of AZO is typically improved by thermal annealing at temperatures not suitable for plastic substrates. Here we present a non-thermal route to improve the electrical and structural properties of AZO by irradiating the TCO films with O+ or Ar+ ion beams (30-350 keV, 3 × 1015-3 × 1016 ions/cm2) after the deposition on glass and flexible polyethylene naphthalate (PEN). X-ray diffraction, optical absorption, electrical measurements, Rutherford Backscattering Spectrometry and Atomic Force Microscopy evidenced an increase of the crystalline grain size and a complete relief of the lattice strain upon ion beam irradiation. Indeed, the resistivity of thin AZO films irradiated at room temperature decreased of two orders of magnitude, similarly to a thermal annealing at 400 °C. We also show that the improvement of the electrical properties does not simply depend on the strain or polycrystalline domain size, as often stated in the literature.

  4. Strong out-of-plane magnetic anisotropy in ion irradiated anatase TiO2 thin films

    M. Stiller

    2016-12-01

    Full Text Available The temperature and field dependence of the magnetization of epitaxial, undoped anatase TiO2 thin films on SrTiO3 substrates was investigated. Low-energy ion irradiation was used to modify the surface of the films within a few nanometers, yet with high enough energy to produce oxygen and titanium vacancies. The as-prepared thin film shows ferromagnetism which increases after irradiation with low-energy ions. An optimal and clear magnetic anisotropy was observed after the first irradiation, opposite to the expected form anisotropy. Taking into account the experimental parameters, titanium vacancies as di-Frenkel pairs appear to be responsible for the enhanced ferromagnetism and the strong anisotropy observed in our films. The magnetic impurities concentrations was measured by particle-induced X-ray emission with ppm resolution. They are ruled out as a source of the observed ferromagnetism before and after irradiation.

  5. Surface modification and adhesion improvement of PTFE film by ion beam irradiation

    Lee, S.W.; Hong, J.W.; Wye, M.Y.; Kim, J.H.; Kang, H.J.; Lee, Y.S.

    2004-01-01

    The polytetrafluoroethylene (PTFE) surfaces, modified by 1 kV Ar + or O 2 + ion beam irradiation, was investigated with in-situ X-ray photoelectron spectroscopy (XPS), scanning electron micrographs (SEM), atomic force microscopy (AFM) measurements. The surface of PTFE films modified by Ar + ion irradiation was carbonized and the surface roughness increased with increasing ion doses. The surface of PTFE films modified by both Ar + ion in O 2 atmosphere and O 2 + ion irradiation formed the oxygen function group on PTFE surface, and the surface roughness change was relatively small. The adhesion improvement in Ar + ion irradiated PTFE surface is attributed to mechanical interlocking due to the surface roughness and -CF-radical, but that in Ar + ion irradiation in an O 2 atmosphere was contributed by the C-O complex and -CF-radical with mechanical interlocking. The C-O complex and -CF-radical in O 2 + ion irradiated surface contributed to the adhesion

  6. Effect of ion irradiation on tensile ductility, strength and fictive temperature in metallic glass nanowires

    Magagnosc, D.J.; Kumar, G.; Schroers, J.; Felfer, P.; Cairney, J.M.; Gianola, D.S.

    2014-01-01

    Ion irradiation of thermoplastically molded Pt 57.5 Cu 14.3 Ni 5.7 P 22.5 metallic glass nanowires is used to study the relationship between glass structure and tensile behavior across a wide range of structural states. Starting with the as-molded state of the glass, ion fluence and irradiated volume fraction are systematically varied to rejuvenate the glass, and the resulting plastic behavior of the metallic glass nanowires probed by in situ mechanical testing in a scanning electron microscope. Whereas the as-molded nanowires exhibit high strength, brittle-like fracture and negligible inelastic deformation, ion-irradiated nanowires show tensile ductility and quasi-homogeneous plastic deformation. Signatures of changes to the glass structure owing to ion irradiation as obtained from electron diffraction are subtle, despite relatively large yield strength reductions of hundreds of megapascals relative to the as-molded condition. To reconcile changes in mechanical behavior with glass properties, we adapt previous models equating the released strain energy during shear banding to a transit through the glass transition temperature by incorporating the excess enthalpy associated with distinct structural states. Our model suggests that ion irradiation increases the fictive temperature of our glass by tens of degrees – the equivalent of many orders of magnitude change in cooling rate. We further show our analytical description of yield strength to quantitatively describe literature results showing a correlation between severe plastic deformation and hardness in a single glass system. Our results highlight not only the capacity for room temperature ductile plastic flow in nanoscaled metallic glasses, but also processing strategies capable of glass rejuvenation outside of the realm of traditional thermal treatments

  7. Effect of He+ fluence on surface morphology and ion-irradiation induced defect evolution in 7075 aluminum alloys

    Ni, Kai; Ma, Qian; Wan, Hao; Yang, Bin; Ge, Junjie; Zhang, Lingyu; Si, Naichao

    2018-02-01

    The evolution of microstructure for 7075 aluminum alloys with 50 Kev helium ions irradiation were studied by using optical microscopy (OM), scanning electron microscopy (SEM), x-ray diffraction (XRD) and transmission electron microscopy (TEM). The fluences of 1 × 1015, 1 × 1016 and 1 × 1017 ions cm-2 were selected, and irradiation experiments were conducted at room temperatures. The transmission process of He+ ions was simulated by using SRIM software, including distribution of ion ranges, energy losses and atomic displacements. Experimental results show that irradiated pits and micro-cracks were observed on irradiation sample surface, and the size of constituent particles (not including Mg2Si) decreased with the increasing dose. The x-ray diffraction results of the pair of peaks is better resolved in irradiated samples might indicate that the stressed structure consequence due to crystal defects (vacancies and interstitials) after He+ implantation. TEM observation indicated that the density of MgZn2 phase was significantly reduced after helium ion irradiation which is harmful to strength. Besides, the development of compressive stress produced a large amount of dislocation defects in the 1015 ions cm-2 sample. Moreover, higher fluence irradiation produced more dislocations in sample. At fluence of 1016 ions cm-2, dislocation wall formed by dislocation slip and aggregation in the interior of grains, leading to the refinement of these grains. As fluence increased to 1017 ions cm-2, dislocation loops were observed in pinned dislocation. Moreover, dislocation as effective defect sink, irradiation-induced vacancy defects aggregated to these sinks, and resulted in the formation of helium bubbles in dislocation.

  8. Etching behavior of poly (vinylidene fluoride) thin films irradiated with ion beams. Effect of irradiated ions and pretreatment

    Yamaki, Tetsuya; Rohani, Rosiah; Koshikawa, Hiroshi; Takahashi, Shuichi; Hasegawa, Shin; Asano, Masaharu; Maekawa, Yasunari; Voss, Kay-Obbe; Neumann, Reinhard

    2008-01-01

    Poly (vinylidene fluoride) thin films irradiated with four kinds of ion beams were exposed to a 9M KOH aqueous solution after their storage in air for 30 or 90 days at different temperatures. According to the conductometry, the heating at 120degC was found to enhance the etch rate in the latent track without changing that in the bulk, thereby enabling us to obtain very high etching sensitivity for the preparation of nano-sized through-pores. The formation of hydroperoxides during this pretreatment should facilitate the introduction of the etching agent to improve etchability. Additionally, the irradiation of higher-LET ions, causing each track to contain more activated sites (like radicals), was preferable to achieve high sensitivity of the etching. (author)

  9. Triplet formation in the ion recombination in irradiated liquids

    Bartczak, W.M.; Tachiya, M.; Hummel, A.

    1990-01-01

    The formation of singlet and triplet excited stages in the ion recombination in groups of oppositely charged ions (or positive ions and electrons) in nonpolar liquids, as occurs in the tracks of high energy electrons, is considered. Theoretical studies on triplet formation in groups of ion pairs have thus far concentrated on the case where recombination of the negative ions with any of the positive ions in the group is equally probable (random recombination). In this paper the probability for geminate recombination (electron and parent positive ion) vs cross-recombination (an electron with a positive ion other than its parent ion) in multiple ion pair groups is calculated by computer simulation and the effect of the initial spatial configuration of the charged species is investigated. It is also shown explicitly that the probability for singlet formation as a result of cross recombination is equal to 1/4, when spin relaxation by magnetic interaction with the medium and by exchange interaction can be neglected. The effect of the preferential recombination on the singlet formation probability is illustrated and recent experimental results on singlet to triplet ratios are discussed. (author)

  10. Ion irradiation damage in ilmenite at 100 K

    Mitchell, J.N.; Yu, N.; Devanathan, R.; Sickafus, K.E.; Nastasi, M.A.

    1997-01-01

    A natural single crystal of ilmenite (FeTiO 3 ) was irradiated at 100 K with 200 keV Ar 2+ . Rutherford backscattering spectroscopy and ion channeling with MeV He + ions were used to monitor damage accumulation in the surface region of the implanted crystal. At an irradiation fluence of 1 x 10 15 Ar 2+ cm -2 , considerable near-surface He + ion dechanneling was observed, to the extent that ion yield from a portion of the aligned crystal spectrum reached the yield level of a random spectrum. This observation suggests that the near-surface region of the crystal was amorphized by the implantation. Cross-sectional transmission electron microscopy and electron diffraction on this sample confirmed the presence of a 150 nm thick amorphous layer. These results are compared to similar investigations on geikielite (MgTiO 3 ) and spinel (MgAl 2 O 4 ) to explore factors that may influence radiation damage response in oxides

  11. Ion irradiation damage in ilmenite at 100 K

    Mitchell, J.N.; Yu, N.; Devanathan, R.; Sickafus, K.E.; Nastasi, M.A.; Nord, G.L.

    1997-01-01

    A natural single crystal of ilmenite (FeTiO3) was irradiated at 100 K with 200 keV Ar2+. Rutherford backscattering spectroscopy and ion channeling with 2 MeV He+ ions were used to monitor damage accumulation in the surface region of the implanted crystal. At an irradiation fluence of 1 ?? 1015 Ar2+/cm2, considerable near-surface He+ ion dechanneling was observed, to the extent that ion yield from a portion of the aligned crystal spectrum reached the yield level of a random spectrum. This observation suggests that the near-surface region of the crystal was amorphized by the implantation. Cross-sectional transmission electron microscopy and electron diffraction on this sample confirmed the presence of a 150 nm thick amorphous layer. These results are compared to similar investigations on geikielite (MgTiO3) and spinel (MgAl2O4) to explore factors that may influence radiation damage response in oxides.

  12. Light ion irradiation for unfavorable soft tissue sarcoma

    Linstadt, D.; Castro, J.R.; Phillips, T.L.; Petti, P.L.; Collier, J.M.; Daftari, I.; Schoethaler, R.; Rayner, A.

    1990-09-01

    Between 1978 and 1989, 32 patients with unfavorable soft tissue sarcoma underwent light ion (helium, neon) irradiation with curative intent at Lawrence Berkeley Laboratory. The tumors were located in the trunk in 22 patients and head and neck in 10. Macroscopic tumor was present in 22 at the time of irradiation. Two patients had tumors apparently induced by previous therapeutic irradiation. Follow-up times for surviving patients ranged from 4 to 121 months (median 27 months). The overall 3-year actuarial local control rate was 62%; the corresponding survival rate was 50%. The 3-year actuarial control rate for patients irradiated with macroscopic tumors was 48%, while none of the patients with microscopic disease developed local recurrence (100%). The corresponding 3-year actuarial survival rates were 40% (macroscopic) and 78% (microscopic). Patients with retroperitoneal sarcoma did notably well; the local control rate and survival rate were 64% and 62%, respectively. Complications were acceptable; there were no radiation related deaths, while two patients (6%) required operations to correct significant radiation-related injuries. These results appear promising compared to those achieved by low -LET irradiation, and suggest that this technique merits further investigation

  13. Irradiation effects in polycarbonate induced by 2.1 GeV Kr ions

    Tian Huixian; Jin Yunfan; Zhu Zhiyong; Liu Changlong; Sun Youmei; Wang Zhiguang; Liu Jie; Chen Xiaoxi; Wang Yanbin; Hou Mingdong

    2002-01-01

    Polycarbonate films were irradiated with 2.1 GeV Kr ions at room temperature in vacuum and in atmosphere, respectively. The ion beam induced effects were studied by means of Fourier transform infrared (FTIR) and ultraviolet visible (UV/VIS) spectroscopies in reflective mode. FTIR measurements indicate that the main effects are bond breaking, chain scissions and bond rearrangement. The creation of alkyne is the result of bond breaking and bond rearrangement. UV/VIS measurements indicate that at wavelengths of 380, 450 and 500 nm, the normalized absorbances follow approximately a linear relationship with the energy deposited density

  14. Mono and sequential ion irradiation induced damage formation and damage recovery in oxide glasses: Stopping power dependence of the mechanical properties

    Mir, A.H.; Monnet, I.; Toulemonde, M.; Bouffard, S.; Jegou, C.; Peuget, S.

    2016-01-01

    Simple and complex borosilicate glasses were irradiated with single and double ion beams of light and heavy ions over a broad fluence and stopping power range. As a result of the heavy ion irradiation (U, Kr, Au), the hardness was observed to diminish and saturate after a decrease by 35 ± 1%. Unlike slow and swift heavy ion irradiation, irradiation with light ions (He,O) induced a saturation hardness decrease of 18 ± 1% only. During double ion beam irradiation; where glasses were first irradiated with a heavy ion (gold) and then by a light ion (helium), the light ion irradiation induced partial damage recovery. As a consequence of the recovery effect, the hardness of the pre-irradiated glasses increased by 10–15% depending on the chemical composition. These results highlight that the nuclear energy loss and high electronic energy loss (≥4 keV/nm) result in significant and similar modifications whereas light ions with low electronic energy loss (≤1 keV/nm) result in only mild damage formation in virgin glasses and recovery in highly pre-damaged glasses. These results are important to understand the damage formation and recovery in actinide bearing minerals and in glasses subjected to self-irradiation by alpha decays. - Highlights: • Behavior of glasses strongly depends on the electronic energy loss (Se) of the ions. • High Se (≥4 keV/nm) induces large changes in comparison to lower Se values. • Apart from mild damage formation, low Se causes recovery of pre-existing damage. • Alpha induced partial recovery of the damage would occur in nuclear waste glasses.

  15. Stored energy recovery of irradiated copper

    Richard, R.T.; Chaplin, R.L.; Coltman, R.R. Jr.; Kerchner, H.R.; Klabunde, C.E.

    1990-01-01

    The stored energy released in Stage I recovery of reactor neutron irradiated copper was measured by differential thermal analysis calorimetry for three fluences up to a maximum of 3.5 x 10 18 n/cm 2 (E>0.1 MeV) after irradiation at temperatures of less than 10 K. The dependence of the stored energy upon fluence, and a tendency toward saturation, were observed. Theoretical reaction rate processes were compared directly with the experimental rates of stored energy release, and the parameters associated with the theory were compared with results from previous resistivity measurements. Good agreement was found for several parameters, but major differences with previous D + E substage results lead to the conclusion that the point defect model may not describe materials experiencing severe neutron damage. Computer studies of warmup rates were made for first and second order and for correlated recovery processes as a function of defect concentration and of external power input. First and second order processes show definite distortion in their recovery rate curves for high defect concentrations; the correlated recovery process shows a much less pronounced effect. This investigation of stored energy used several new approaches. The use of induced radioactivity within the sample as the heating source, and the use of computer generated theoretical stored energy release curves to analyze the data were unique. (author)

  16. Effects of ion beam irradiation on size of mutant sector and genetic damage in Arabidopsis

    Hase, Yoshihiro, E-mail: hase.yoshihiro@qst.go.jp [Takasaki Advanced Radiation Research Institute, National Institutes for Quantum and Radiological Science and Technology (QST), 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Nozawa, Shigeki [Takasaki Advanced Radiation Research Institute, National Institutes for Quantum and Radiological Science and Technology (QST), 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Narumi, Issay [Faculty of Life Sciences, Toyo University, 1-1-1 Izumino, Itakura, Gunma 374-0193 (Japan); Oono, Yutaka [Takasaki Advanced Radiation Research Institute, National Institutes for Quantum and Radiological Science and Technology (QST), 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)

    2017-01-15

    Size of mutant sector and genetic damage were evaluated in Arabidopsis to further our understanding of effective ion beam use in plant mutation breeding. Arabidopsis seeds, heterozygous for the GLABRA1 (GL1) gene (GL1/gl1-1), were irradiated with 15.8 MeV/u neon ions (mean linear energy transfer (LET): 352 keV/μm), 17.3 MeV/u carbon ions (113 keV/μm), or {sup 60}Co gamma rays. The frequency and size of glabrous sectors generated because of inactivation of the GL1 allele were examined. The frequency and overall size of large deletions were evaluated based on the loss of heterozygosity of DNA markers using DNA isolated from glabrous tissue. Irrespective of the radiation properties, plants with mutant sectors were obtained at similar frequencies at the same effective dosage necessary for survival reduction. Ion beams tended to induce larger mutant sectors than gamma rays. The frequency of large deletions (>several kbp) increased as the LET value increased, with chromosome regions larger than 100 kbp lost in most large deletions. The distorted segregation ratio of glabrous plants in the progenies of irradiated GL1/gl1-1 plants suggested frequent occurrence of chromosome rearrangement, especially those subjected to neon ions. Exposure to ion beams with moderate LET values (30–110 keV/μm) is thought effective for inducing mutant sectors without causing extensive genetic damage.

  17. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S.; Sofferman, D. L.; Beskin, I.

    2013-01-01

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport

  18. Evaluation of cell behavior on modified polypropylene with swift heavy ion irradiation

    Arbeitman, Claudia R., E-mail: arbeitman@tandar.cnea.gov.ar [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA, Av. Gral. Paz 1499, 1650 San Martin, Bs. As. (Argentina); CONICET, Av. Rivadavia 1917, C1033AAJ, CABA (Argentina); Ibanez, Irene L. [CONICET, Av. Rivadavia 1917, C1033AAJ, CABA (Argentina); Garcia Bermudez, Gerardo [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA, Av. Gral. Paz 1499, 1650 San Martin, Bs. As. (Argentina); CONICET, Av. Rivadavia 1917, C1033AAJ, CABA (Argentina); Duran, Hebe [CONICET, Av. Rivadavia 1917, C1033AAJ, CABA (Argentina); Gerencia de Desarrollo Tecnologico y Proyectos Especiales, TANDAR-CNEA (Argentina); Grosso, Mariela F. del [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA, Av. Gral. Paz 1499, 1650 San Martin, Bs. As. (Argentina); CONICET, Av. Rivadavia 1917, C1033AAJ, CABA (Argentina); Salguero, Noelia [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA, Av. Gral. Paz 1499, 1650 San Martin, Bs. As. (Argentina); Mazzei, Ruben [U.A. Tecnologicas y Agropecuarias, CNEA (Argentina)

    2012-02-15

    Ion beam irradiation is a well known means to change the physico-chemical properties of polymers, and induced bio and citocompatibility in controlled conditions and in selected areas of surface. However, the enhancement of cell adhesion on a modified substrate does not mean that the surface is adequate for functional cells. The purpose of the present work is to study proliferation, changes in cytoskeleton and cell morphology on substrates as a function of irradiation parameters. We irradiated polypropylene with sulfur (S) ion-beam at energies of 110 MeV with fluences between 1 Multiplication-Sign 10{sup 6} and 2 Multiplication-Sign 10{sup 10} ions cm{sup -2}. NIH 3T3 cells were cultured on each sample. Cell morphology was observed using phase contrast microscopy and cytoskeleton proteins with fluorescence microscopy. The analysis show different cellular responses as a functions of irradiation parameter, strongly suggests that different underlying substratum can result in distinct types of cytoskeleton reorganization.

  19. Tailored ion energy distributions on plasma electrodes

    Economou, Demetre J.

    2013-01-01

    As microelectronic device features continue to shrink approaching atomic dimensions, control of the ion energy distribution on the substrate during plasma etching and deposition becomes increasingly critical. The ion energy should be high enough to drive ion-assisted etching, but not too high to cause substrate damage or loss of selectivity. In many cases, a nearly monoenergetic ion energy distribution (IED) is desired to achieve highly selective etching. In this work, the author briefly reviews: (1) the fundamentals of development of the ion energy distribution in the sheath and (2) methods to control the IED on plasma electrodes. Such methods include the application of “tailored” voltage waveforms on an electrode in continuous wave plasmas, or the application of synchronous bias on a “boundary electrode” during a specified time window in the afterglow of pulsed plasmas

  20. Multicavity SCRF calculation of ion hydration energies

    Diercksen, B.H.F.; Karelson, M.; Tamm, T.

    1994-01-01

    The hydration energies of the proton, hydroxyl ion, and several inorganic ions were calculated using the multicavity self-consistent reaction field (MCa SCRF) method developed for the quantum-mechanical modeling of rotationally or flexible systems in dielectric media. The ionic complexes H 3 O + (H2O) 4 , OH - (H2O) 4 , NH + 4 (H2O) 4 , and Hal - (H2O) 4 , where Hal = F, Cl, or Br, have been studied. Each complex was divided between five spheres, corresponding to the central ion and four water molecules in their first coordination sphere, respectively. Each cavity was surrounded by a polarizable medium with the dielectric permittivity of water at room temperature (80). The ionic hydration energies of ions were divided into specific and nonspecific parts. After accounting for the cavity-formation energy using scaled particle theory, good agreement between the total calculated and experimental hydration energies was obtained for all ions studied

  1. Energy reflection coefficient for H+ ions at energies between 10 and 80 keV

    Chen, C.K.; Bohdansky, J.; Eckstein, W.; Robinson, M.T.

    1984-04-01

    The energy reflection coefficient for H + ions at energies between 10 keV and 80 keV was determined by experiments and by computer calculations. Measurements were made with graphite, Al, Cu, Mo and W. targets. The angle of ion incidence was restricted to 85 0 , 78 0 and 70 0 measured from the surface normal. Calculated data were obtained by two different Monte Carlo computer programs (MARLOWE, TRIM). It was found that both the calculated and the measured data scale with the parameter epsilon cos 2 α, where epsilon is Lindhard's reduced energy and α the angle of incidence for the ions. The measured values are smaller than those calculated. This can be explained by surface roughness which developed during the ion irradiation

  2. Microstructure and Nano-Hardness of 10 MeV Cl-Ion Irradiated T91 Steel

    Hu Jing; Wang Xianping; Gao Yunxia; Zhuang Zhong; Zhang Tao; Fang Qianfeng; Liu Changsong

    2015-01-01

    Hardening and elemental segregation of T91 martenstic steel irradiated by 10 MeV Cl ions to doses from 0.06 dpa to 0.83 dpa were investigated with the nanoindentation technique and transmission electron microscopy (TEM). The results demonstrated that the irradiation hardening was closely related with irradiation dose. By increasing the dose, the hardness increased rapidly at first from the initial value of 3.15 GPa before irradiation, and then tended to saturate at a value of 3.58 GPa at the highest dose of 0.83 dpa. Combined with TEM observation, the mechanism of hardening was preliminary attributed to the formation of M(Fe,Cr) 2 3C 6 carbides induced by the high energy Cl-ion irradiation. (paper)

  3. Mean excitation energies for molecular ions

    Jensen, Phillip W.K.; Sauer, Stephan P.A. [Department of Chemistry, University of Copenhagen, Copenhagen (Denmark); Oddershede, Jens [Department of Physics, Chemistry, and Pharmacy, University of Southern Denmark, Odense (Denmark); Quantum Theory Project, Departments of Physics and Chemistry, University of Florida, Gainesville, FL (United States); Sabin, John R., E-mail: sabin@qtp.ufl.edu [Department of Physics, Chemistry, and Pharmacy, University of Southern Denmark, Odense (Denmark); Quantum Theory Project, Departments of Physics and Chemistry, University of Florida, Gainesville, FL (United States)

    2017-03-01

    The essential material constant that determines the bulk of the stopping power of high energy projectiles, the mean excitation energy, is calculated for a range of smaller molecular ions using the RPA method. It is demonstrated that the mean excitation energy of both molecules and atoms increase with ionic charge. However, while the mean excitation energies of atoms also increase with atomic number, the opposite is the case for mean excitation energies for molecules and molecular ions. The origin of these effects is explained by considering the spectral representation of the excited state contributing to the mean excitation energy.

  4. Material modifications in lithium niobate and lithium tantalate crystals by ion irradiation

    Raeth, Niels Lennart

    2017-01-01

    The artificially produced crystals lithium niobate (LiNbO 3 ) and the closely related lithium tantalate (LiTaO 3 ) are proven starting materials for producing active and passive devices that can guide, amplify, switch and process light. For this purpose, it is often necessary to be able to influence the refractive index of the substrate targeted, which is possible in addition to other methods by irradiation of the materials with fast light ions. In this work, lithium niobate and lithium tantalate crystals are irradiated with alpha particles, 3 He ions, deuterons, and protons at projectile energies of up to 14 MeV / nucleon. Energy and crystal thickness are chosen so that the projectiles penetrate the entire sample and are not implanted. All isotopes responsible for the unwanted nuclear activation of the crystals due to the irradiation are relatively short-lived and overall the activation decreases fast enough to allow the safe handling of the irradiated samples after a storage period of a few days to a few weeks. The refractive index changes produced in lithium niobate and lithium tantalate by irradiation with the different projectiles are determined interferometrically and can also be measured by suitable choice of the sample geometry as a function of the ion penetration depth: In LiNbO 3 the ordinary refractive index decreases, the extraordinary increases equally. In LiTaO 3 , both the ordinary and the extraordinary refractive indices decrease as a result of the irradiation; the ordinary refractive index change is many times stronger than the extraordinary one. There is an enormous long-term stability at room temperature for both crystal systems: Even after eleven (LiNbO 3 ) or three (LiTaO 3 ) years, no decrease in the ion beam-induced refractive index change can be observed. The ion beam-induced refractive index changes are probably the result of atomic displacements such as vacancies, defect clusters or ''latent tracks''. An explanation for

  5. Radioprotective action of glycerol and cysteamine on inactivation and mutagenesis in Salmonella tester strains after gamma and heavy ion irradiation

    Basha, S.G.; Krasavin, E.A.; Kozubek, S.

    1991-01-01

    Inactivation and mutagenesis were studied in Salmonella tester strains after γ-irradiation and after heavy ion irradiation in the presence of glycerol and cysteamine. Bacterial cells were irradiated at Dubna, JINR. Ions from deuterons to carbon were used with residual energies 2-9 MeV/u. The protective effect of glycerol was found both for γ-radiation and for heavy ions up to 50 keV/μm for both cell inactivation and mutagenesis in Salmonella tester strains with different mutation events. Cell sensitivity slightly increased with LET before falling down. The maximum was shifted in the presence of glycerol to the left and was less pronounced. The radioprotective effect of glycerol diminished gradually with LET from 2.0 for γ-radiation to 1.1 for carbon ions. Mutagenesis increases with LET in TA100 strain; in TA98 strain no marked increase could be detected. 13 refs.; 4 figs.; 5 tabs

  6. POLYMERS CONTAINING Cu NANOPARTICLES IRRADIATED BY LASER TO ENHANCE THE ION ACCELERATION

    Mariapompea Cutroneo

    2015-06-01

    Full Text Available Target Normal Sheath Acceleration method was employed at PALS to accelerate ions from laser-generated plasma at intensities above 1015 W/cm2. Laser parameters, irradiation conditions and target geometry and composition control the plasma properties and the electric field driving the ion acceleration. Cu nanoparticles deposited on the polymer promote resonant absorption effects increasing the plasma electron density and enhancing the proton acceleration. Protons can be accelerated in forward direction at kinetic energies up to about 3.5 MeV. The optimal target thickness, the maximum acceleration energy and the angular distribution of emitted particles have been measured using ion collectors, X-ray CCD streak camera, SiC detectors and Thomson Parabola Spectrometer.

  7. Characterization of polymeric films subjected to lithium ion beam irradiation

    Groenewold, Gary S., E-mail: gary.groenewold@inl.gov [Idaho National Laboratory, 2351 North Boulevard, Idaho Falls, ID 83415-2208 (United States); Cannon, W. Roger; Lessing, Paul A. [Idaho National Laboratory, 2351 North Boulevard, Idaho Falls, ID 83415-2208 (United States); Avci, Recep; Deliorman, Muhammedin; Wolfenden, Mark [Image and Chemical Analysis Laboratory, Montana State University, Bozeman, MT 59717 (United States); Akers, Doug W.; Jewell, J. Keith; Zuck, Larry D. [Idaho National Laboratory, 2351 North Boulevard, Idaho Falls, ID 83415-2208 (United States)

    2013-02-01

    Highlights: ► Polyethylene glycol (PEG) and paraffinic polymers were subjected to Li ion irradiation. ► Small oligomers detected in irradiated PEG by electrospray ionization (ESI) mass spectrometry. ► Radiolytic scission observed in X-ray photoelectron and electrospray ionization mass spectra. ► Radiation modified paraffinics characterized by changes in non-ionic surfactant additives. ► Results suggest that extent of radiolysis, and radiolytic pathways can be inferred. -- Abstract: Two different polymeric materials that are candidate materials for use as binders for mixed uranium–plutonium oxide nuclear fuel pellets were subjected to Li ion beam irradiation, in order to simulate intense alpha irradiation. The materials (a polyethylene glycol 8000 and a microcrystalline wax) were then analyzed using a combination of mass spectrometry (MS) approaches and X-ray photoelectron spectroscopy (XPS). Samples of the irradiated PEG materials were dissolved in H{sub 2}O and then analyzed using electrospray ionization-MS, which showed the formation of a series of small oligomers in addition to intact large PEG oligomers. The small oligomers were likely formed by radiation-induced homolytic scissions of the C–O and C–C bonds, which furnish radical intermediates that react by radical recombination with H{sup ·} and OH{sup ·}. Surface analysis using SIMS revealed a heterogeneous surface that contained not only PEG-derived polymers, but also hydrocarbon-based entities that are likely surface contaminants. XPS of the irradiated PEG samples indicated the emergence of different carbon species, with peak shifts suggesting the presence of sp{sup 2} carbon atoms. Analysis of the paraffinic film using XPS showed the emergence of oxygen on the surface of the sample, and also a broadening and shifting of the C1s peak, demonstrating a change in the chemistry on the surface. The paraffinic film did not dissolve in either H{sub 2}O or a H{sub 2}O–methanol solution, and

  8. Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide

    Jadhav, Vidya, E-mail: vj1510@yahoo.com

    2015-09-01

    Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide crystal have been reported. Single crystal, 1 0 0〉 orientations and ∼500 μm thick p-type GaSb samples with carrier concentration of 3.30 × 10{sup 17} cm{sup −3} were irradiated at 100 MeV Fe{sup 7+} ions. We have used 15UD Pelletron facilities at IUAC with varying fluences of 5 × 10{sup 10}–1 × 10{sup 14} ions cm{sup −2}. The effects of irradiation on these samples have been investigated using, spectroscopic ellipsometry, atomic force microscopy and ultraviolet–visible–NIR spectroscopy techniques. Ellipsometry parameters, psi (Ψ) and delta (Δ) for the unirradiated sample and samples irradiated with different fluences were recorded. The data were fit to a three phase model to determine the refractive index and extinction coefficient. The refractive index and extinction coefficient for various fluences in ultraviolet, visible, and infrared, regimes were evaluated. Atomic force microscopy has been used to study these surface modifications. In order to have more statistical information about the surface, we have plotted the height structure histogram for all the samples. For unirradiated sample, we observed the Gaussian fitting. This result indicates the more ordered height structure symmetry. Whereas for the sample irradiated with the fluence of 1 × 10{sup 13}, 5 × 10{sup 13} and 1 × 10{sup 14} ions cm{sup −2}, we observed the scattered data. The width of the histogram for samples irradiated up to the fluence of 1 × 10{sup 13} ion cm{sup −2} was found to be almost same however it decreased at higher fluence. UV reflectance spectra of the sample irradiated with increasing fluences exhibit three peaks at 292, 500 and 617 nm represent the high energy GaSb; E{sub 1}, E{sub 1} + Δ and E{sub 2} band gaps in all irradiated samples.

  9. Tuning the hydrophobicity of mica surfaces by hyperthermal Ar ion irradiation

    Keller, Adrian; Ogaki, Ryosuke; Bald, Ilko; Dong Mingdong; Kingshott, Peter; Fritzsche, Monika; Facsko, Stefan; Besenbacher, Flemming

    2011-01-01

    The hydrophobicity of surfaces has a strong influence on their interactions with biomolecules such as proteins. Therefore, for in vitro studies of bio-surface interactions model surfaces with tailored hydrophobicity are of utmost importance. Here, we present a method for tuning the hydrophobicity of atomically flat mica surfaces by hyperthermal Ar ion irradiation. Due to the sub-100 eV energies, only negligible roughening of the surface is observed at low ion fluences and also the chemical composition of the mica crystal remains almost undisturbed. However, the ion irradiation induces the preferential removal of the outermost layer of K + ions from the surface, leading to the exposure of the underlying aluminosilicate sheets which feature a large number of centers for C adsorption. The irradiated surface thus exhibits an enhanced chemical reactivity toward hydrocarbons, resulting in the adsorption of a thin hydrocarbon film from the environment. Aging these surfaces under ambient conditions leads to a continuous increase of their contact angle until a fully hydrophobic surface with a contact angle >80 deg. is obtained after a period of about 3 months. This method thus enables the fabrication of ultrasmooth biological model surfaces with precisely tailored hydrophobicity.

  10. Heavy ion irradiation effects of brannerite-type ceramics

    Lian, J.; Wang, L.M.; Lumpkin, G.R.; Ewing, R.C.

    2002-01-01

    Brannerite, UTi 2 O 6 , occurs in polyphase Ti-based, crystalline ceramics that are under development for plutonium immobilization. In order to investigate radiation effects caused by α-decay events of Pu, a 1 MeV Kr + irradiation on UTi 2 O 6 , ThTi 2 O 6 , CeTi 2 O 6 and a more complex material, composed of Ca-containing brannerite and pyrochlore, was performed over a temperature range of 25-1020 K. The ion irradiation-induced crystalline-to-amorphous transformation was observed in all brannerite samples. The critical amorphization temperatures of the different brannerite compositions are: 970 K, UTi 2 O 6 ; 990 K, ThTi 2 O 6 ; 1020 K, CeTi 2 O 6 . The systematic increase in radiation resistance from Ce-, Th- to U-brannerite is related to the difference of mean atomic mass of A-site cation in the structure. As compared with the pyrochlore structure-type, brannerite phases are more susceptible to ion irradiation-induced amorphization. The effects of structure and chemical compositions on radiation resistance of brannerite-type and pyrochlore-type ceramics are discussed

  11. On the defect structure due to low energy ion bombardment of graphite

    Marton, D.; Bu, H.; Boyd, K. J.; Todorov, S. S.; Al-Bayati, A. H.; Rabalais, J. W.

    1995-03-01

    Graphite surfaces cleaved perpendicular to the c axis have been irradiated with low doses of Ar + ions at 50 eV kinetic energy and perpendicular incidence. Scanning tunneling micrographs (STM) of these irradiated surfaces exhibited dome-like features as well as point defects. These dome-like features retain undisturbed graphite periodicity. This finding is attributed to the stopping of ions between the first and second graphite sheets. The possibility of doping semiconductors at extremely shallow depths is raised.

  12. Investigation of Au9+ swift heavy ion irradiation on CdS/CuInSe2 thin films

    Joshi, Rajesh A.; Taur, Vidya S.; Singh, Fouran; Sharma, Ramphal

    2013-01-01

    In the present manuscript we report about the preparation of CdS/CuInSe 2 heterojunction thin films by chemical ion exchange method and investigation of 120 MeV Au 9+ swift heavy ions (SHI) irradiation effect on its physicochemical as well as optoelectronic properties. These pristine (as grown) samples are irradiated with 120 MeV Au 9+ SHI of 5×10 11 and 5×10 12 ions/cm 2 fluencies and later on characterized for structural, compositional, morphological, optical and I–V characteristics. X-ray diffraction (XRD) pattern obtained from pristine and irradiated films shows considerable modifications in peak intensity as well as rising of some new peaks, corresponding to In 2 Se 3 , Cu 3 Se 2 and CuIn 2 Se 3 materials. Transmission electron microscope (TEM) images show decrease in grain size upon increase in irradiation ion fluencies, which is also supported from the observation of random and uneven distribution of nano-grains as confirmed through scanning electron microscope (SEM) images. Presence of Cd, Cu, In, S and Se in energy dispersive X-ray spectrum analysis (EDAX) confirms the expected and observed elemental composition in thin films, the absorbance peaks are related to band to band transitions and spin orbit splitting while energy band gap is observed to increase from 1.36 for pristine to 1.53 eV for SHI irradiated thin films and I–V characteristics under illumination to 100 mW/cm 2 light source shows enhancement in conversion efficiency from 0.26 to 1.59% upon irradiation. - Highlights: • Nanostructured CdS/CuInSe 2 can be grown by chemical ion exchange method. • Physicochemical and optoelectronic properties can be modified by 120 MeV Au 9+ SHI Irradiation. • Solar energy conversion efficiency improved from 0.26 to 1.59% in CdS/CuInSe 2 upon irradiation

  13. Mechanical properties of MeV ion-irradiated SiC/SiC composites characterized by indentation technique

    Park, J.Y.; Park, K.H.; Kim, W.; Kishimoto, H.; Kohyama, A.

    2007-01-01

    Full text of publication follows: SiC/SiC composites have been considered as a structural material for advanced fusion concepts. In the core of fusion reactor, those SiC/SiC composites are experienced the complex attacks such as strong neutron, high temperature and transmuted gases. One of the vital data for designing the SiC/SiC composites to the fusion reactor is mechanical properties under the severe neutron irradiation. In this work, various SiC/SiC composites were prepared by the different fabrication processes like CVI (chemical vapor infiltration), WA-CVI (SiC whisker assisted CVI) and hot-pressed method. The expected neutron irradiation was simulated by a silicon self-ion irradiation at a DuET facility; Dual-beam for Energy Technologies, Kyoto University. The irradiation temperature were 600 deg. C and 1200 deg. C, and the irradiation does were 5 dpa and 20 dpa, respectively. The 5.1 MeV Si ions were irradiated to the intrinsic CVI-SiC, SiC whisker reinforced SiC and SiC composites produced by hot-press method. The mechanical properties like hardness, elastic modulus and fracture toughness were characterized by an indentation technique. The ion irradiation caused the increase of the hardness and fracture toughness, which was dependent on the irradiation temperature. SiC whisker reinforcement in the SiC matrix accelerated the increase of the fracture toughness by the ion irradiation. For SiC/SiC composites after the ion irradiation, this work will provide the additional data for the mechanical properties as well as the effect of SiC whisker reinforcement. (authors)

  14. Energy stored in irradiated NaCl

    Lidiard, A.B.

    1979-01-01

    Recently reported measurements of the energy stored in heavily irradiated NaCl are reviewed in the light of recent understanding of radiation-damage processes in this material. It is shown that, in the ranges of temperatures and dose rates of these experiments, the F-centres produced by the irradiation are retained principally in the form of colloids: the stored energy is thus a direct measure of the number of F-centres retained in this form. Comparison of these results with the prediction of the recently proposed theory of colloid growth shows that the predictions of the dependence of colloid growth rates upon temperature and dose rate are qualitatively correct. The dependence of stored energy dose, however, appears to require the inclusion of a thermally activated back-reaction and possible modifications to the theory are briefly discussed. However, further experiments in this range of temperatures and dose rates are necessary for more quantitative tests of the theory. This reconsideration of the data does not alter the broad conclusion as to the relative insignificance of stored energy in a natural salt formation used as a radioactive waste repository, although more extensive measurements permitting a more exact test of theory would allow better predictions to be made for such applications. (author)

  15. Measurements of low energy auroral ions

    Urban, A.

    1981-01-01

    This paper summarizes ion measurements in the energy range 0.1 to 30 keV observed during the campaigns 'Substorm Phenomena' and 'Porcupine'. For a clear survey of the physical processes during extraordinary events, sometimes ion measurements of higher energies are also taken into account. Generally, the pitch angle distributions were isotropic during all flights except some remarkable events. In general the ion and electron flux intensities correlated, but sometimes revealed a spectral anti-correlation. Acceleration of the ions by an electrostatic field aligned parallel to the magnetic field could be identified accompanied by intense electron precipitation. On the other hand deceleration of the ions was observed in other field-aligned current sheets which are indicated by the electron and magnetic field measurements. Temporal successive monoenergetic ion variations pointed to energy dispersion and to the location of the source region at 9 Rsub(E). Furthermore, ion fluxes higher than those of the electrons were measured at pitch angles parallel to the magnetic field. The integral down-going number and energy flux of the ions contributed to the total particle or energy influx between 65% and less than 7% and did not clearly characterize the geophysical launch conditions or auroral activities. (author)

  16. Effect on structure and mechanical property of tungsten irradiated by high intensity pulsed ion beam

    Mei, Xianxiu; Zhang, Xiaonan; Liu, Xiaofei; Wang, Younian

    2017-09-01

    The anti-thermal radiation performance of tungsten was investigated by high intensity pulsed ion beam technology. The ion beam was mainly composed of Cn+ (70%) and H+ (30%) at an acceleration voltage of 250 kV under different energy densities for different number of pulses. GIXRD analysis showed that no obvious phase structural changes occurred on the tungsten, and microstress generated. SEM analysis exhibited that there was no apparent irradiation damage on the surface of tungsten at the low irradiation frequency (3 times and 10 times) and at the low energy density (0.25 J/cm2 and 0.7 J/cm2). Cracks appeared on the surface of tungsten after 100-time and 300-time irradiation. Shedding phenomenon even appeared on the surface of tungsten at the energy densities of 1.4 J/cm2 and 2.0 J/cm2. The surface nano-hardness of tungsten decreased with the increase of the pulse times and the energy density. The tungsten has good anti-thermal radiation properties under certain heat load environment.

  17. Ion irradiation effect of alumina and its luminescence

    Aoki, Yasushi; Yamamoto, Shunya; Naramoto, Hiroshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; My, N T

    1997-03-01

    The luminescence spectra of single crystalline alpha-alumina and ruby which has 0.02% of Cr{sub 2}O{sub 3} as a impurity, induced by 200 keV He{sup +} and Ar{sup +} irradiation were measured at room temperature as a function of irradiation dose. The analysis of the measured spectra showed the existence of three main luminescence features in the wavelength region of 250 to 350 nm, namely anionic color centers, F-center at 411 nm and F{sup +}-center at 330 nm and a band observed around 315 nm. As alpha-alumina was irradiated with He{sup +}, F-center and F{sup +}-center luminescence grew and decayed, but the behaviors of those were different from each other. It seems that a concentration quenching occurred on the F-center luminescence in the dose range above 1x10{sup 14} He/cm{sup 2}. Furthermore, F-center luminescence was strongly suppressed in ruby, compared with that in alumina. On the other hand, the luminescence band around 315 nm appeared only in the early stage of irradiation and did not show its growth part. The dose dependent behavior was similar to that of Cr{sup 3+} emission at 695 nm (R-line) in ruby in both cases of He{sup +} and Ar{sup +} irradiation. Based on the experimental results mentioned above, the processes of defect formation and excitation in alumina in the early stage of ion irradiation will be discussed. (author)

  18. Hardening and formation of dislocation structures in LiF crystals irradiated with MeV-GeV ions

    Manika, I; Schwartz, K; Trautmann, C

    2002-01-01

    Material modifications of LiF crystals irradiated with Au, Pb and Bi ions of MeV to GeV energy are studied by means of microindentation measurements and dislocation etching. Above a critical irradiation fluence of 10 sup 9 ions/cm sup 2 , the microhardness can improve by a factor of 2 in the bulk and by more than 3 on the surface. Radiation-induced hardening follows the evolution of the energy loss along the ion path. Annealing experiments indicate that complex defect aggregates created in the tracks play a major role for the hardness change. Evidence for severe structural modifications is found when etching indentation impressions in highly irradiated crystals leading to similar pattern as in amorphous or micro-grained materials. Dislocation etching also reveals long-range stress fields extending far beyond the implantation zone deep into the nonirradiated crystal.

  19. Ion irradiation-induced swelling and hardening effect of Hastelloy N alloy

    Zhang, S.J. [Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Li, D.H.; Chen, H.C.; Lei, G.H.; Huang, H.F.; Zhang, W.; Wang, C.B. [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Yan, L., E-mail: yanlong@sinap.ac.cn [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Fu, D.J. [Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Tang, M. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

    2017-06-15

    The volumetric swelling and hardening effect of irradiated Hastelloy N alloy were investigated in this paper. 7 MeV and 1 MeV Xe ions irradiations were performed at room temperature (RT) with irradiation dose ranging from 0.5 to 27 dpa. The volumetric swelling increases with increasing irradiation dose, and reaches up to 3.2% at 27 dpa. And the irradiation induced lattice expansion is also observed. The irradiation induced hardening initiates at low ion dose (≤1dpa) then saturates with higher ion dose. The irradiation induced volumetric swelling may be ascribed to excess atomic volume of defects. The irradiation induced hardening may be explained by the pinning effect where the defects can act as obstacles for the free movement of dislocation lines. And the evolution of the defects' size and number density could be responsible for the saturation of hardness. - Highlights: •Irradiation Swelling: The irradiation induced volumetric swelling increases with ion dose. •Irradiation Hardening: The irradiation hardening initiates below 1 dpa, then saturates with higher ion dose (1–10 dpa). •Irradiation Mechanism: The irradiation phenomena are ascribed to the microstructural evolution of the irradiation defects.

  20. Role of carbon impurities on the surface morphology evolution of tungsten under high dose helium ion irradiation

    Al-Ajlony, A.; Tripathi, J.K.; Hassanein, A.

    2015-01-01

    The effect of carbon impurities on the surface evolution (e.g., fuzz formation) of tungsten (W) surface during 300 eV He ions irradiation was studied. Several tungsten samples were irradiated by He ion beam with a various carbon ions percentage. The presence of minute carbon contamination within the He ion beam was found to be effective in preventing the fuzz formation. At higher carbon concentration, the W surface was found to be fully covered with a thick graphitic layer on the top of tungsten carbide (WC) layer that cover the sample surface. Lowering the ion beam carbon percentage was effective in a significant reduction in the thickness of the surface graphite layer. Under these conditions the W surface was also found to be immune for the fuzz formation. The effect of W fuzz prevention by the WC formation on the sample surface was more noticeable when the He ion beam had much lower carbon (C) ions content (0.01% C). In this case, the fuzz formation was prevented on the vast majority of the W sample surface, while W fuzz was found in limited and isolated areas. The W surface also shows good resistance to morphology evolution when bombarded by high flux of pure H ions at 900 °C. - Highlights: • Reporting formation of W nanostructure (fuzz) due to low energy He ion beam irradiation. • The effect of adding various percentage of carbon impurity to the He ion beam on the trend of W fuzz formation was studied. • Mitigation of W fuzz formation due to addition of small percentage of carbon to the He ion beam is reported. • The formation of long W nanowires due to He ion beam irradiation mixed with 0.01% carbon ions is reported.

  1. High-energy ion implantation of materials

    Williams, J.M.

    1991-11-01

    High-energy ion implantation is an extremely flexible type of surface treatment technique, in that it offers the possibility of treating almost any type of target material or product with ions of almost any chemical species, or combinations of chemical species. In addition, ion implantations can be combined with variations in temperature during or after ion implantation. As a result, the possibility of approaching a wide variety of surface-related materials science problems exists with ion implantation. This paper will outline factors pertinent to application of high-energy ion implantation to surface engineering problems. This factors include fundamental advantages and limitations, economic considerations, present and future equipment, and aspects of materials science

  2. Nanoscale transformation of sp2 to sp3 of graphite by slow highly charged ion irradiation

    Meguro, T.; Hida, A.; Koguchi, Y.; Miyamoto, S.; Yamamoto, Y.; Takai, H.; Maeda, K.; Aoyagi, Y.

    2003-01-01

    Nanoscale transformation of electronic states by highly charged ion (HCI) impact on graphite surfaces is described. The high potential energy of slow HCI, which induces multiple emission of electrons from the surface, provides a strong modification of the electronic states of the local area upon graphite surfaces. The HCI impact and the subsequent surface treatment either by electron injection from a scanning tunneling microscopy tip or by He-Cd laser irradiation induce a localized transition from sp 2 to sp 3 hybridization in graphite, resulting in the formation of nanoscale diamond-like structures (nanodiamond) at the impact region. From Raman spectroscopic measurements on sp 2 related peaks, it is found that the HCI irradiation creates vacancy complexes in contrast to ions having a lower charge state, which generate single vacancies. It is of interest that a single impact of HCI creates one nanodiamond structure, suggesting potential applications of HCI in nanoscale material processing

  3. Phase stability and microstructures of high entropy alloys ion irradiated to high doses

    Xia, Songqin [State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083 (China); Gao, Michael C. [National Energy Technology Laboratory, 1450 Queen Ave SW, Albany, OR, 97321 (United States); AECOM, P.O. Box 1959, Albany, OR, 97321 (United States); Yang, Tengfei [State Key Laboratory of Nuclear Physics and Technology, Center for Applied Physics and Technology, Peking University, Beijing, 100871 (China); Liaw, Peter K. [Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN, 37996 (United States); Zhang, Yong, E-mail: drzhangy@ustb.edu.cn [State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083 (China)

    2016-11-15

    The microstructures of Al{sub x}CoCrFeNi (x = 0.1, 0.75 and 1.5 in molar ratio) high entropy alloys (HEAs) irradiated at room temperature with 3 MeV Au ions at the highest fluence of 105, 91, and 81 displacement per atom, respectively, were studied. Transmission electron microscopy (TEM) and high-resolution TEM (HRTEM) analyses show that the initial microstructures and phase composition of all three alloys are retained after ion irradiation and no phase decomposition is observed. Furthermore, it is demonstrated that the disordered face-centered cubic (FCC) and disordered body-centered cubic (BCC) phases show much less defect cluster formation and structural damage than the NiAl-type ordered B2 phase. This effect is explained by higher entropy of mixing, higher defect formation/migration energies, substantially lower thermal conductivity, and higher atomic level stress in the disordered phases.

  4. Optical waveguides in LiTaO3 crystals fabricated by swift C5+ ion irradiation

    Liu, Guiyuan; He, Ruiyun; Akhmadaliev, Shavkat; Vázquez de Aldana, Javier R.; Zhou, Shengqiang; Chen, Feng

    2014-01-01

    We report on the optical waveguides, in both planar and ridge configurations, fabricated in LiTaO 3 crystal by using carbon (C 5+ ) ions irradiation at energy of 15 MeV. The planar waveguide was produced by direct irradiation of swift C 5+ ions, whilst the ridge waveguides were manufactured by using femtosecond laser ablation of the planar layer. The reconstructed refractive index profile of the planar waveguide has showed a barrier-shaped distribution, and the near-field waveguide mode intensity distribution was in good agreement with the calculated modal profile. After thermal annealing at 260 °C in air, the propagation losses of both the planar and ridge waveguides were reduced to 10 dB/cm

  5. Study of point defect clustering in electron and ion irradiated zirconium alloys

    Hellio, C.; Boulanger, L.

    1986-09-01

    Dislocation loops created by 500 keV Zr + ions and 1 MeV electrons in zirconium have a/3 type Burgers vectors, and in ion irradiated samples, loops lie preferentially on planes close to (1010). From in-situ observations of loop growth under 1 MeV electron irradiation in zirconium and dilute Zr (Nb,O) alloys, a strong increase of the vacancy migration energy with oxygen concentration was observed, from 0.72 eV for pure zirconium to 1.7 eV for Zr and Zr-1% Nb doped with 1800 ppm weight oxygen, indicating large trapping of vacancies by O single interstitials or clusters

  6. Chlorine diffusion in uranium dioxide under heavy ion irradiation

    Pipon, Y.; Bererd, N.; Moncoffre, N.; Peaucelle, C.; Toulhoat, N.; Jaffrezic, H.; Raimbault, L.; Sainsot, P.; Carlot, G.

    2007-01-01

    The radiation enhanced diffusion of chlorine in UO 2 during heavy ion irradiation is studied. In order to simulate the behaviour of 36 Cl, present as an impurity in UO 2 , 37 Cl has been implanted into the samples (projected range 200 nm). The samples were then irradiated with 63.5 MeV 127 I at two fluxes and two temperatures and the chlorine distribution was analyzed by SIMS. The results show that, during irradiation, the diffusion of the implanted chlorine is enhanced and slightly athermal with respect to pure thermal diffusion. A chlorine gain of 10% accumulating near the surface has been observed at 510 K. This corresponds to the displacement of pristine chlorine from a region of maximum defect concentration. This behaviour and the mean value of the apparent diffusion coefficient found for the implanted chlorine, around 2.5 x 10 -14 cm 2 s -1 , reflect the high mobility of chlorine in UO 2 during irradiation with fission products

  7. Chlorine diffusion in uranium dioxide under heavy ion irradiation

    Pipon, Y.; Bérerd, N.; Moncoffre, N.; Peaucelle, C.; Toulhoat, N.; Jaffrézic, H.; Raimbault, L.; Sainsot, P.; Carlot, G.

    2007-04-01

    The radiation enhanced diffusion of chlorine in UO2 during heavy ion irradiation is studied. In order to simulate the behaviour of 36Cl, present as an impurity in UO2, 37Cl has been implanted into the samples (projected range 200 nm). The samples were then irradiated with 63.5 MeV 127I at two fluxes and two temperatures and the chlorine distribution was analyzed by SIMS. The results show that, during irradiation, the diffusion of the implanted chlorine is enhanced and slightly athermal with respect to pure thermal diffusion. A chlorine gain of 10% accumulating near the surface has been observed at 510 K. This corresponds to the displacement of pristine chlorine from a region of maximum defect concentration. This behaviour and the mean value of the apparent diffusion coefficient found for the implanted chlorine, around 2.5 × 10-14 cm2 s-1, reflect the high mobility of chlorine in UO2 during irradiation with fission products.

  8. Deuterium ion irradiation induced precipitation in Fe–Cr alloy: Characterization and effects on irradiation behavior

    Liu, P.P.; Yu, R.; Zhu, Y.M.; Zhao, M.Z.; Bai, J.W.; Wan, F.R.; Zhan, Q.

    2015-01-01

    Highlights: • A new phase precipitated in Fe–Cr alloy after deuterium ion irradiation at 773 K. • B2 structure was proposed for the Cr-rich new phase. • Strain fields around the precipitate have been measured by GPA. • The precipitate decrease growth rate of dislocation loop under electron irradiation. - Abstract: A new phase was found to precipitate in a Fe–Cr model alloy after 58 keV deuterium ion irradiation at 773 K. The nanoscale radiation-induced precipitate was studied systematically using high resolution transmission electron microscopy (HRTEM), image simulation and in-situ ultrahigh voltage transmission electron microscopy (HVEM). B2 structure is proposed for the new Cr-rich phase, which adopts a cube-on-cube orientation relationship with regard to the Fe matrix. Geometric phase analysis (GPA) was employed to measure the strain fields around the precipitate and this was used to explain its characteristic 1-dimensional elongation along the 〈1 0 0〉 Fe direction. The precipitate was stable under subsequent electron irradiation at different temperatures. We suggest that the precipitate with a high interface-to-volume ratio enhances the radiation resistance of the material. The reason for this is the presence of a large number of interfaces between the precipitate and the matrix, which may greatly reduce the concentration of point defects around the dislocation loops. This leads to a significant decrease in the growth rate

  9. Effect of Si ion irradiation on polycrystalline CdS thin film grown from novel photochemical deposition technique

    Soundeswaran, S.; Senthil Kumar, O.; Ramasamy, P.; Kabi Raj, D.; Avasthi, D.K.; Dhanasekaran, R.

    2005-01-01

    CdS thin films have been deposited from aqueous solution by photochemical reactions. The solution contains Cd(CH 3 COO) 2 and Na 2 S 2 O 3 , and pH is controlled in an acidic region by adding H 2 SO 4 . The solution is illuminated with light from a high-pressure mercury-arc lamp. CdS thin films are formed on a glass substrate by the heterogeneous nucleation and the deposited thin films have been subjected to high-energy Si ion irradiations. Si ion irradiation has been performed with an energy of 80 MeV at fluences of 1x10 11 , 1x10 12 , 1x10 13 and 1x10 14 ions/cm 2 using tandem pelletron accelerator. The irradiation-induced changes in CdS thin films are studied using XRD, Raman spectroscopy and photoluminescence. Broadening of the PL emission peak were observed with increasing irradiation fluence, which could be attributed to the band tailing effect of the Si ion irradiation. The lattice disorder takes place at high Si ion fluences

  10. Formation of dislocations and hardening of LiF under high-dose irradiation with 5-21 MeV {sup 12}C ions

    Zabels, R.; Manika, I.; Maniks, J.; Grants, R. [Institute of Solid State Physics, University of Latvia, Riga (Latvia); Schwartz, K. [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Dauletbekova, A.; Baizhumanov, M. [L.N. Gumilyov Eurasian National University, Astana (Kazakhstan); Zdorovets, M. [Institute of Nuclear Physics, Almaty (Kazakhstan)

    2017-05-15

    The emergence of dislocations and hardening of LiF crystals irradiated to high doses with {sup 12}C ions have been investigated using chemical etching, AFM, nanoindentation, and thermal annealing. At fluences ensuring the overlapping of tracks (Φ ≥6 x 10{sup 11} ions/cm{sup 2}), the formation of dislocation-rich structure and ion-induced hardening is observed. High-fluence (10{sup 15} ions/cm{sup 2}) irradiation with {sup 12}C ions causes accumulation of extended defects and induces hardening comparable to that reached by heavy ions despite of large differences in ion mass, energy, energy loss, and track morphology. The depth profiles of hardness indicate on a notable contribution of elastic collision mechanism (nuclear loss) in the damage production and hardening. The effect manifests at the end part of the ion range and becomes significant at high fluences (≥10{sup 14} ions/cm{sup 2}). (orig.)

  11. Dewetting and nanopattern formation of thin Pt films on SiO2 induced by ion beam irradiation

    Hu, Xiaoyuan; Cahill, David G.; Averback, Robert S.

    2001-01-01

    Dewetting and nanopattern formation of 3 - 10 nm Pt thin films upon ion irradiation is studied using scanning electron microscopy (SEM). Lateral feature size and the fraction of exposed surface area are extracted from SEM images and analyzed as functions of ion dose. The dewetting phenomenon has little temperature dependence for 3 nm Pt films irradiated by 800 keV Kr + at temperatures ranging from 80 to 823 K. At 893 K, the films dewet without irradiation, and no pattern formation is observed even after irradiation. The thickness of the Pt films, in the range 3 - 10 nm, influences the pattern formation, with the lateral feature size increasing approximately linearly with film thickness. The effect of different ion species and energies on the dewetting process is also investigated using 800 keV Kr + and Ar + irradiation and 19.5keVHe + , Ar + , Kr + , and Xe + irradiation. The lateral feature size and exposed surface fraction scale with energy deposition density (J/cm2) for all conditions except 19.5keVXe + irradiation. [copyright] 2001 American Institute of Physics

  12. Structural, thermal and optical behavior of 84 MeV oxygen and 120 MeV silicon ions irradiated PES

    Samra, Kawaljeet Singh; Thakur, Sonika; Singh, Lakhwant

    2011-01-01

    In order to study structural, thermal and optical behavior, thin flat samples of polyethersulfone were irradiated with oxygen and silicon ions. The changes in properties were analyzed using different techniques viz: X-ray diffraction, thermo-gravimetric analysis, Fourier transform infrared, UV-visible and photoluminescence spectroscopy. A noticeable increase in the intensity of X-ray diffraction peaks was observed after irradiation with 84 MeV oxygen ions at low and medium fluences, which may be attributed to radiation-induced cross-linking in polymer. Fourier transform infrared and thermo-gravimetric analysis corroborated the results of X-ray diffraction analysis. No noticeable change in the Fourier transform infrared spectra of oxygen ion irradiated polyethersulfone were observed even at the highest fluence of 1 x 10 13 ions cm -2 , but after irradiation with silicon ions, a reduction in intensity of almost all characteristic bands was revealed. An increase in the activation energy of decomposition of polyethersulfone was observed after irradiation with 84 MeV oxygen ions up to medium fluences but degradation was revealed at higher fluences. Similar trends were observed by photoluminescence analysis.

  13. Heavy ion irradiation of crystalline water ice. Cosmic ray amorphisation cross-section and sputtering yield

    Dartois, E.; Augé, B.; Boduch, P.; Brunetto, R.; Chabot, M.; Domaracka, A.; Ding, J. J.; Kamalou, O.; Lv, X. Y.; Rothard, H.; da Silveira, E. F.; Thomas, J. C.

    2015-04-01

    Context. Under cosmic irradiation, the interstellar water ice mantles evolve towards a compact amorphous state. Crystalline ice amorphisation was previously monitored mainly in the keV to hundreds of keV ion energies. Aims: We experimentally investigate heavy ion irradiation amorphisation of crystalline ice, at high energies closer to true cosmic rays, and explore the water-ice sputtering yield. Methods: We irradiated thin crystalline ice films with MeV to GeV swift ion beams, produced at the GANIL accelerator. The ice infrared spectral evolution as a function of fluence is monitored with in-situ infrared spectroscopy (induced amorphisation of the initial crystalline state into a compact amorphous phase). Results: The crystalline ice amorphisation cross-section is measured in the high electronic stopping-power range for different temperatures. At large fluence, the ice sputtering is measured on the infrared spectra, and the fitted sputtering-yield dependence, combined with previous measurements, is quadratic over three decades of electronic stopping power. Conclusions: The final state of cosmic ray irradiation for porous amorphous and crystalline ice, as monitored by infrared spectroscopy, is the same, but with a large difference in cross-section, hence in time scale in an astrophysical context. The cosmic ray water-ice sputtering rates compete with the UV photodesorption yields reported in the literature. The prevalence of direct cosmic ray sputtering over cosmic-ray induced photons photodesorption may be particularly true for ices strongly bonded to the ice mantles surfaces, such as hydrogen-bonded ice structures or more generally the so-called polar ices. Experiments performed at the Grand Accélérateur National d'Ions Lourds (GANIL) Caen, France. Part of this work has been financed by the French INSU-CNRS programme "Physique et Chimie du Milieu Interstellaire" (PCMI) and the ANR IGLIAS.

  14. Simulation for evaluation of the multi-ion-irradiation Laboratory of TechnoFusion facility and its relevance for fusion applications

    Jimenez-Rey, D.; Mota, F.; Vila, R.; Ibarra, A.; Ortiz, Christophe J.; Martinez-Albertos, J.L.; Roman, R.; Gonzalez, M.; Garcia-Cortes, I.; Perlado, J.M.

    2011-01-01

    Thermonuclear fusion requires the development of several research facilities, in addition to ITER, needed to advance the technologies for future fusion reactors. TechnoFusion will focus in some of the priority areas identified by international fusion programmes. Specifically, the TechnoFusion Area of Irradiation of Materials aims at surrogating experimentally the effects of neutron irradiation on materials using a combination of ion beams. This paper justifies this approach using computer simulations to validate the multi-ion-irradiation Laboratory. The planned irradiation facility will investigate the effects of high energetic radiations on reactor-relevant materials. In a second stage, it will also be used to analyze the performance of such materials and evaluate newly designed materials. The multi-ion-irradiation Laboratory, both triple irradiation and high-energy proton irradiation, can provide valid experimental techniques to reproduce the effect of neutron damage in fusion environment.

  15. Heavy ion reactions at high energies

    Jakobsson, Bo.

    1977-01-01

    A review on heavy ion experiments at energies >0.1GeV/nucleon is presented. Reaction cross-sections, isotope production cross-sections and pion production in nucleus-nucleus collisions are discussed. Some recent models for heavy ion reactions like the abrasion-ablation model, the fireball model and the different shock-wave models are also presented

  16. Mean excitation energies for molecular ions

    Jensen, Phillip W.K.; Sauer, Stephan P.A.; Oddershede, Jens

    2017-01-01

    The essential material constant that determines the bulk of the stopping power of high energy projectiles, the mean excitation energy, is calculated for a range of smaller molecular ions using the RPA method. It is demonstrated that the mean excitation energy of both molecules and atoms increase...

  17. Development of Nanoporous Polymer Membranes by Swift Heavy Ion Irradiation

    Dinesh, Divya; Predeep, P.

    2011-10-01

    This study reveals the preparation of conical pores in polyethylene terephthalate (PET) by track etching. The polymer membrane is etched from one side by keeping between the clamps of conductivity cell followed by irradiation with swift heavy ion of 197Au. Electrical stopping supports chemical stopping. During etching process current is measured as a function of time till a sharp increase -breakthrough-observed. After etching membranes are thoroughly washed with stopping solution and water. Resultant films are characterized using Optical microscope and field emission scanning electron microscopy. Polymer films with uniform pores can be a cheaper templating material in the fields of photonic crystals and micro- electronics.

  18. Low energy ion beam dynamics of NANOGAN ECR ion source

    Kumar, Sarvesh, E-mail: sarvesh@iuac.res.in; Mandal, A.

    2016-04-01

    A new low energy ion beam facility (LEIBF) has been developed for providing the mass analyzed highly charged intense ion beams of energy ranging from a few tens of keV to a few MeV for atomic, molecular and materials sciences research. The new facility consists of an all permanent magnet 10 GHz electron cyclotron resonance (ECR) ion source (NANOGAN) installed on a high voltage platform (400 kV) which provides large currents of multiply charged ion beams. Higher emittance at low energy of intense ion beam puts a tremendous challenge to the beam optical design of this facility. The beam line consists of mainly the electrostatic quadrupoles, an accelerating section, analyzing cum switching magnet and suitable beam diagnostics including vacuum components. The accelerated ion beam is analyzed for a particular mass to charge (m/q) ratio as well as guided to three different lines along 75°, 90° and 105° using a large acceptance analyzing cum switching magnet. The details of transverse beam optics to all the beam lines with TRANSPORT and GICOSY beam optics codes are being described. Field computation code, OPERA 3D has been utilized to design the magnets and electrostatic quadrupoles. A theoretical estimation of emittance for optimized geometry of ion source is given so as to form the basis of beam optics calculations. The method of quadrupole scan of the beam is used to characterize the emittance of the final beam on the target. The measured beam emittance increases with m/q ratios of various ion beams similar to the trend observed theoretically.

  19. Ionic conduction in 70-MeV C5+-ion-irradiated poly(vinylidenefluoride- co-hexafluoropropylene)-based gel polymer electrolytes

    Saikia, D.; Kumar, A.; Singh, F.; Avasthi, D.K.; Mishra, N.C.

    2005-01-01

    In an attempt to increase the Li + -ion diffusivity, poly(vinylidenefluoride-co-hexafluoropropylene)-(propylene carbonate+diethyl carbonate)-lithium perchlorate gel polymer electrolyte system has been irradiated with 70-MeV C 5+ -ion beam of nine different fluences. Swift heavy-ion irradiation shows enhancement in ionic conductivity at lower fluences and decrease in ionic conductivity at higher fluences with respect to unirradiated gel polymer electrolyte films. Maximum room-temperature (303 K) ionic conductivity is found to be 2x10 -2 S/cm after irradiation with a fluence of 10 11 ions/cm 2 . This interesting result could be attributed to the fact that for a particular ion beam with a given energy, a higher fluence provides critical activation energy for cross linking and crystallization to occur, which results in the decrease in ionic conductivity. X-ray-diffraction results show decrease in the degree of crystallinity upon ion irradiation at low fluences (≤10 11 ions/cm 2 ) and increase in crystallinity at higher fluences (>10 11 ions/cm 2 ). Analysis of Fourier-transform infrared spectroscopy results suggests the bond breaking at a fluence of 5x10 9 ions/cm 2 and cross linking at a fluence of 10 12 ions/cm 2 and corroborate conductivity and x-ray-diffraction results. Scanning electron micrographs exhibit increased porosity of the polymer electrolyte after ion irradiation

  20. Characterization of biodegradable polymers irradiated with swift heavy ions

    Salguero, N.G.; Grosso, M.F. del; Durán, H.; Peruzzo, P.J.; Amalvy, J.I.

    2012-01-01

    In view of their application as biomaterials, there is an increasing interest in developing new methods to induce controlled cell adhesion onto polymeric materials. The critical step in all these methods involves the modification of polymer surfaces, to induce cell adhesion, without changing theirs degradation and biocompatibility properties. In this work two biodegradable polymers, polyhydroxybutyrate (PHB) and poly-L-lactide acid (PLLA) were irradiated using carbon and sulfur beams with different energies and fluences. Pristine and irradiated samples were degradated by immersion in a phosphate buffer at pH 7.0 and then characterized. The analysis after irradiation and degradation showed a decrease in the contact angle values and changes in their crystallinity properties.

  1. Characterization of biodegradable polymers irradiated with swift heavy ions

    Salguero, N.G. [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA, Av. Gral. Paz 1499 (B1650KNA) San Martin, Buenos Aires (Argentina); Grosso, M.F. del, E-mail: delgrosso@tandar.cnea.gov.ar [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA, Av. Gral. Paz 1499 (B1650KNA) San Martin, Buenos Aires (Argentina); CONICET, Av. Rivadavia 1917 C1033AAJ CABA (Argentina); Duran, H. [CONICET, Av. Rivadavia 1917 C1033AAJ CABA (Argentina); Gerencia de Desarrollo Tecnologico y Proyectos Especiales, CNEA, Av. Gral. Paz 1499 (B1650KNA) San Mart Latin-Small-Letter-Dotless-I Acute-Accent n, Buenos Aires (Argentina); Escuela de Ciencia y Tecnologia, H. Yrigoyen 3100, CP 1650, San Martin, UNSAM (Argentina); Peruzzo, P.J. [CICPBA - Grupo de Materiales y Nanomateriales Polimericos, Instituto de Investigaciones Fisicoquimicas Teoricas y Aplicadas (INIFTA), CCT La Plata CONICET - Universidad Nacional de La Plata, La Plata (Argentina); Amalvy, J.I. [CICPBA - Grupo de Materiales y Nanomateriales Polimericos, Instituto de Investigaciones Fisicoquimicas Teoricas y Aplicadas (INIFTA), CCT La Plata CONICET - Universidad Nacional de La Plata, La Plata (Argentina); Facultad de Ingenieria, Universidad Nacional de La Plata, Calle 116 y 48 (B1900TAG), La Plata (Argentina); Departamento de Ingenieria Quimica, Facultad Regional La Plata, Universidad Tecnologica Nacional, 60 y 124 (1900), La Plata (Argentina); and others

    2012-02-15

    In view of their application as biomaterials, there is an increasing interest in developing new methods to induce controlled cell adhesion onto polymeric materials. The critical step in all these methods involves the modification of polymer surfaces, to induce cell adhesion, without changing theirs degradation and biocompatibility properties. In this work two biodegradable polymers, polyhydroxybutyrate (PHB) and poly-L-lactide acid (PLLA) were irradiated using carbon and sulfur beams with different energies and fluences. Pristine and irradiated samples were degradated by immersion in a phosphate buffer at pH 7.0 and then characterized. The analysis after irradiation and degradation showed a decrease in the contact angle values and changes in their crystallinity properties.

  2. Effects of tube diameter and chirality on the stability of single-walled carbon nanotubes under ion irradiation

    Xu Zijian; Zhang Wei; Zhu Zhiyuan; Ren Cuilan; Li Yong; Huai Ping

    2009-01-01

    Using molecular dynamics method, we investigated the influence of tube diameter and chirality on the stability of single-walled carbon nanotubes (CNTs) under ion irradiation. We found that in the energy range below 1 keV, the dependence of CNT stability on the tube diameter is no longer monotonic under C ion irradiation, and the thinner (5, 5) CNT may be more stable than the thicker (7, 7) CNT, while under Ar irradiation, the CNT stability increases still monotonically with the CNT diameter. This stability behavior was further verified by the calculations of the threshold ion energies to produce displacement damage in CNTs. The abnormal stability of thin CNTs is related to their resistance to the instantaneous deformation in the wall induced by ion pushing, the high self-healing capacity, as well as the different interaction properties of C and Ar ions with CNT atoms. We also found that under ion irradiation the stability of a zigzag CNT is better than that of an armchair CNT with the same diameter. This is because of the bonding structure difference between the armchair and the zigzag CNTs with respect to the orientations of graphitic networks as well as the self-healing capacity difference.

  3. Activity computer program for calculating ion irradiation activation

    Palmer, Ben; Connolly, Brian; Read, Mark

    2017-07-01

    A computer program, Activity, was developed to predict the activity and gamma lines of materials irradiated with an ion beam. It uses the TENDL (Koning and Rochman, 2012) [1] proton reaction cross section database, the Stopping and Range of Ions in Matter (SRIM) (Biersack et al., 2010) code, a Nuclear Data Services (NDS) radioactive decay database (Sonzogni, 2006) [2] and an ENDF gamma decay database (Herman and Chadwick, 2006) [3]. An extended version of Bateman's equation is used to calculate the activity at time t, and this equation is solved analytically, with the option to also solve by numeric inverse Laplace Transform as a failsafe. The program outputs the expected activity and gamma lines of the activated material.

  4. Neovascular glaucoma after helium ion irradiation for uveal melanoma

    Kim, M.K.; Char, D.H.; Castro, J.L.; Saunders, W.M.; Chen, G.T.; Stone, R.D.

    1986-01-01

    Neovascular glaucoma developed in 22 of 169 uveal melanoma patients treated with helium ion irradiation. Most patients had large melanomas; no eyes containing small melanomas developed anterior segment neovascularization. The mean onset of glaucoma was 14.1 months (range, 7-31 months). The incidence of anterior segment neovascularization increased with radiation dosage; there was an approximately three-fold increase at 80 GyE versus 60 GyE of helium ion radiation (23% vs. 8.5%) (P less than 0.05). Neovascular glaucoma occurred more commonly in larger tumors; the incidence was not affected by tumor location, presence of subretinal fluid, nor rate of tumor regression. Fifty-three percent of patients had some response with intraocular pressures of 21 mmHg or less to a combination of antiglaucoma treatments

  5. In situ ion irradiation/implantation studies in the HVEM-Tandem Facility at Argonne National Laboratory

    Allen, C.W.; Funk, L.L.; Ryan, E.A.; Taylor, A.

    1988-09-01

    The HVEM-Tandem User Facility at Argonne National Laboratory interfaces two ion accelerators, a 2 MV tandem accelerator and a 650 kV ion implanter, to a 1.2 MV high voltage electron microscope. This combination allows experiments involving simultaneous ion irradiation/ion implantation, electron irradiation and electron microscopy/electron diffraction to be performed. In addition the availability of a variety of microscope sample holders permits these as well as other types of in situ experiments to be performed at temperatures ranging from 10-1300 K, with the sample in a stressed state or with simultaneous determination of electrical resistivity of the specimen. This paper summarizes the details of the Facility which are relevant to simultaneous ion beam material modification and electron microscopy, presents several current applications and briefly describes the straightforward mechanism for potential users to access this US Department of Energy supported facility. 7 refs., 1 fig., 1 tab

  6. Resonant absorption effects induced by polarized laser ligth irradiating thin foils in the tnsa regime of ion acceleration

    Torrisi, L.; Badziak, J.; Rosinski, M.; Zaras-Szydlowska, A.; Pfeifer, M.; Torrisi, A.

    2016-01-01

    Thin foils were irradiated by short pulsed lasers at intensities of 10 16−19 W/cm 2 in order to produce non-equilibrium plasmas and ion acceleration from the target-normal-sheath-acceleration (TNSA) regime. Ion acceleration in forward direction was measured by SiC detectors and ion collectors used in the time-of-flight configuration. Laser irradiations were employed using p-polarized light at different incidence angles with respect to the target surface and at different focal distances from the target surface. Measurements demonstrate that resonant absorption effects, due to the plasma wave excitations, enhance the plasma temperature and the ion acceleration with respect to those performed without to use of p-polarized light. Dependences of the ion flux characteristics on the laser energy, wavelength, focal distance and incidence angle will be reported and discussed

  7. Ion irradiation effects in structural and magnetic properties of Co/Cu multilayers

    Sakamoto, Isao; Okazaki, Satoshi; Koike, Masaki; Honda, Shigeo

    2012-01-01

    400 keV Ar ion (the Ar ion) and 50 keV He ion (the He ion) irradiations were performed in order to elucidate roles of Co/Cu interfacial structures in physical origins of giant magnetoresistance (GMR) in the [Co (2 nm)/Cu (2 nm)] 30 multilayers (MLs). The magnetoresistance (MR) ratio after the Ar ion irradiation decreases abruptly with increasing Ar ion fluence. On the other hand, the MR ratio after the He ion irradiation decreases slowly with increasing He ion fluence. The Ar ion irradiation induces the decrease in the difference (R max − R sat ) between the maximum resistance (R max ) and the saturated resistance (R sat ) under in-plane magnetic field and the increase in the R sat , although the effect of the He ion irradiation is not remarkable. The decrease in the (R max − R sat ) rather than the increase in the R sat seems to be effective for the decrease in the MR ratios after the Ar ion and the He ion irradiation. The increase in the R sat implies the mixing of Co atoms in Cu layers. The antiferromagnetic coupling fraction (AFF) estimated from the magnetization curves after the Ar ion and the He ion irradiation shows the similar behavior with the MR ratio as a function of ion fluence. Therefore, although the degrees of the irradiation effects by the Ar ion and the He ions are different, we suggest the relation between the GMR and the AFF affected by the ion-induced interfacial structures accompanied with the atomic mixing in the interfacial region.

  8. Role of the irradiation temperature on the modifications of swift-heavy-ion irradiated polyethylene

    Melot, M.; Ngono-Ravache, Y.; Balanzat, E.

    2003-01-01

    The damage processes triggered by swift heavy ions, SHI, can be very different to those induced by classical low ionising particles. This is due to the very high electronic stopping power, (dE/dx) e , of SHI. This paper concerns the effects of SHI on polyethylene, PE. In PE, low (dE/dx) e irradiations induce crosslinking and in-chain double bond formation. At high (dE/dx) e , the creation yield of vinyl groups becomes significant. Above a (dE/dx) e threshold, alkyne and allene groups appear. We present results on low temperature irradiations that bring new enlightenment on the damage process by preventing the migration of radiation-induced radicals and molecules. Two SHI specific modifications are studied: vinyl groups and alkyne end groups. We have irradiated PE films with oxygen and sulphur beams at 13.6 and 11.2 MeV/amu, respectively. The modifications were followed by in situ infrared spectroscopy (FTIR). We have performed irradiations at 8 and 290 K. The samples irradiated at 8 K have been annealed up to 290 K for investigating the effect of radical migration. Lowering the irradiation temperature to 8 K increases the creation yield of vinyl groups and alkyne end groups. The enhancement factor between 290 and 8 K is around three. Consequently the formation of defects specific to SHI irradiations is sensitive to radical migration and hence requires some time. During annealing, the alkyne concentration remains stable indicating that the creation of this group cannot be induced by radical recombination. The annealing spectra of vinyl groups are more complex

  9. Cascade-probabilistic function with taking unto account energy losses of ions. Chapter 3

    1998-01-01

    Mathematical simulation of cascade-probabilistic functions (CPF) for ions with taking into account of energy losses is carried out. Recommendations for CPF calculation on computer are given. Influence of both the interaction number on CPF domain and the interaction depth on CPF domain are determined. Contribution of energy losses into simplest CPF is estimated. Algorithm of radiation defects concentration calculation under ion irradiation with taking into consideration energy losses is cited

  10. Characterization of damaging in apatitic materials irradiated with heavy ions and thermally annealed

    Tisserand, R.

    2004-12-01

    Some minerals belonging to the family of apatite are seen to be potential candidates for use as conditioning matrices or transmutation targets for high level nuclear waste management. Indeed, studies of natural nuclear reactors (Oklo) highlighted the strong ability of these minerals to anneal irradiation damage. In order to determine the global behaviour of these materials, we performed a fundamental study on the evolution of irradiation damage induced by various heavy ions in two apatites: a natural phospho-calcic fluor-apatite from Durango and a synthetic sintered mono-silicated fluor-apatite, called britholite. The damage in these materials was measured by using channelling R.B.S. and X-ray diffraction respectively and by determining an amorphization effective radius Re. The results revealed a similar behaviour for both apatites according to the electronic energy deposit at the entrance of the material. In addition, the effect of an isothermal annealing at 300 C was quantified on a mono-silicated britholite previously irradiated with Kr ions. We highlighted in this case the return of the lattice parameters to their initial values, followed by a partial and slow rebuilding of the crystalline lattice versus the annealing time. Finally, we followed the changes in the morphology of etch pits in the Durango fluor-apatite after acid dissolution as a function of the energy deposit by the ions. We showed that the influence of crystallography leads quickly to opening angles close to 30 degrees. The calculation of etching velocities within the irradiated material highlighted that there is a range of deposit energy where the velocity ratio increases strongly before becoming constant. (author)

  11. Investigations on the structural and optical properties of the swift heavy ion irradiated 6H-SiC

    Viswanathan, E.; Katharria, Y.S.; Selvakumar, S.; Arulchakkaravarthi, A.; Kanjilal, D.; Sivaji, K.

    2011-01-01

    Research highlights: → We have reported the structural and optical properties of SHI irradiated 6H-SiC. → The change in Raman modes evidences the disorder accumulation with respect to ion fluence. → The disorder also causes the modification in the optical properties. → The time resolved photoluminescence reflects multiple lifetimes due to the degenerate defects states. → The study also reveals the presence of partial amorphous region due to SHI irradiation. -- Abstract: Single crystal 6H-SiC wafers have been irradiated with 150 MeV Ag 12+ ions with fluences ranging from 1 x 10 11 to 1 x 10 13 ions/cm 2 at 300 K. The defect accumulation as a function of fluence was studied to determine changes in structural and optical properties. The variation in the fundamental Raman modes of the crystalline 6H-SiC due to irradiation has been correlated with the disorder accumulation. The creation of defect states due to irradiation in the bandgap affects the blue-green photoluminescence emission in the irradiated samples. The UV-Visible absorption studies support the existence of defect states in the bandgap which is observed by the shift in the absorption edge towards the lower energy side with increasing fluence. Time Correlated Single Photon Counting photoluminescence decay results suggest that the existing defect states are radiative, exhibiting three lifetimes when irradiated with a fluence 5 x 10 11 ions/cm 2 . The total number of lifetime components was reduced for a fluence 1 x 10 13 ions/cm 2 as the defect states produced increase the non-radiative defect centres. These results suggest that the accumulation of defects due to irradiation at fluences 5 x 10 11 and 1 x 10 13 ions/cm 2 are degenerate configurations which exhibit multiple lifetimes in photoluminescence studies. It is inferred that the optically active defect states influence the transition rate of charge carriers in this device material.

  12. Single-ion irradiation: physics, technology and applications

    Ohdomari, Iwao

    2008-01-01

    Among the various radiation effects which involve the study of radiation environments, responses of materials and devices to radiation, radiation testing and radiation hardening of devices and equipment, this review mainly considers the radiation effects induced by alpha particles and other ions used in semiconductor technology on Si crystals and Si devices. We first describe the single-ion microprobe that enables the study of the site dependence of radiation hardness in a semiconductor device. Next, we describe single-ion implantation as a tool for suppressing fluctuation in device function induced by the discrete number and random position of dopant atoms. Finally, we describe the common features associated with both 'probing' and 'modification' in terms of the nature and behaviour of defect clusters induced by single-ion irradiation. A special feature of the review is that the radiation effects discussed here are induced by 'single' particles, and not by particle beams. Although there is a great amount of accumulated data on radiation effects, they are discussed in the conventional terms of 'dose' or 'fluence,' whose unit is cm -2 . Therefore, this review provides complementary information on radiation effects. (topical review)

  13. Physico-chemical changes in heavy ions irradiated polymer foils by differential scanning calorimetry

    Ciesla, K.; Trautmann, Ch.; Vansant, E.F.

    1994-01-01

    The sample of commercial PETP (Hostaphan) and very heavy ions irradiated products were investigated by differential scanning calorimetry in nitrogen flow. Irradiation were performed with Dy ions of 13 MeV/u with fluences 5 x 10 10 ions/cm 2 . Differences were observed in melting behaviour of unirradiated and irradiated foils. The influence of irradiation conditions on the results was noticed. Moreover the samples of polyimide (Kapton) and polycarbonate (Macrofol) irradiated in similar conditions were examined by DSC. The DSC traces have been compared with those of unirradiated reference samples. (author). 8 refs, 5 figs

  14. Effect of swift heavy ion irradiation on deep levels in Au /n-Si (100) Schottky diode studied by deep level transient spectroscopy

    Kumar, Sandeep; Katharria, Y. S.; Kumar, Sugam; Kanjilal, D.

    2007-12-01

    In situ deep level transient spectroscopy has been applied to investigate the influence of 100MeV Si7+ ion irradiation on the deep levels present in Au/n-Si (100) Schottky structure in a wide fluence range from 5×109to1×1012ions cm-2. The swift heavy ion irradiation introduces a deep level at Ec-0.32eV. It is found that initially, trap level concentration of the energy level at Ec-0.40eV increases with irradiation up to a fluence value of 1×1010cm-2 while the deep level concentration decreases as irradiation fluence increases beyond the fluence value of 5×1010cm-2. These results are discussed, taking into account the role of energy transfer mechanism of high energy ions in material.

  15. Hydrogen microscopy and analysis of DNA repair using focused high energy ion beams

    Dollinger, G. [Universitaet der Bundeswehr Muenchen, LRT 2, Werner Heisenberg Weg 39, D-85579 Neubiberg (Germany)]. E-mail: guenther.dollinger@unibw.de; Bergmaier, A. [Universitaet der Bundeswehr Muenchen, LRT 2, Werner Heisenberg Weg 39, D-85579 Neubiberg (Germany); Hauptner, A. [Physik Department E 12, Technische Universitaet Muenchen, D-85748 Garching (Germany); Dietzel, S. [Department Biologie II, Ludwigs-Maximilians-Universitaet Muenchen, Grosshaderner Str. 2, 82152 Planegg-Martinsried (Germany); Drexler, G.A. [Strahlenbiologisches Institut, LMU Muenchen, Schillerstr. 42, D-80336 Muenchen und Institut fuer Strahlenbiologie, GSF-Forschungszentrum, D-85764 Neuherberg (Germany); Greubel, C. [Physik Department E 12, Technische Universitaet Muenchen, D-85748 Garching (Germany); Hable, V. [Universitaet der Bundeswehr Muenchen, LRT 2, Werner Heisenberg Weg 39, D-85579 Neubiberg (Germany); Reichart, P. [School of Physics, University of Melbourne, Victoria 3010 (Australia); Kruecken, R. [Physik Department E 12, Technische Universitaet Muenchen, D-85748 Garching (Germany); Cremer, T. [Department Biologie II, Ludwigs-Maximilians-Universitaet Muenchen, Grosshaderner Str. 2, 82152 Planegg-Martinsried (Germany); Friedl, A.A. [Strahlenbiologisches Institut, LMU Muenchen, Schillerstr. 42, D-80336 Muenchen und Institut fuer Strahlenbiologie, GSF-Forschungszentrum, D-85764 Neuherberg (Germany)

    2006-08-15

    The ion microprobe SNAKE (Supraleitendes Nanoskop fuer Angewandte Kernphysikalische Experimente) at the Munich 14 MV tandem accelerator achieves beam focussing by a superconducting quadrupole doublet and can make use of a broad range of ions and ion energies, i.e. 4-28 MeV protons or up to 250 MeV gold ions. Due to these ion beams, SNAKE is particularly attractive for ion beam analyses in various fields. Here we describe two main applications of SNAKE. One is the unique possibility to perform three-dimensional hydrogen microscopy by elastic proton-proton scattering utilizing high energy proton beams. The high proton energies allow the analysis of samples with a thickness in the 100 {mu}m range with micrometer resolution and a sensitivity better than 1 ppm. In a second application, SNAKE is used to analyse protein dynamics in cells by irradiating live cells with single focussed ions. Fluorescence from immunostained protein 53BP1 is used as biological track detector after irradiation of HeLa cells. It is used to examine the irradiated region in comparison with the targeted region. Observed patterns of fluorescence foci agree reasonably well with irradiation patterns, indicating an overall targeting accuracy of about 2 {mu}m while the beam spot size is less than 0.5 {mu}m in diameter. This performance shows successful adaptation of SNAKE for biological experiments where cells are targeted on a sub-cellular level by energetic ions.

  16. Enhanced defects recombination in ion irradiated SiC

    Izzo, G.; Litrico, G.; Grassia, F.; Calcagno, L.; Foti, G.

    2010-01-01

    Point defects induced in SiC by ion irradiation show a recombination at temperatures as low as 320 K and this process is enhanced after running current density ranging from 80 to 120 A/cm 2 . Ion irradiation induces in SiC the formation of different defect levels and low-temperature annealing changes their concentration. Some levels (S 0 , S x and S 2 ) show a recombination and simultaneously a new level (S 1 ) is formed. An enhanced recombination of defects is besides observed after running current in the diode at room temperature. The carriers introduction reduces the S 2 trap concentration, while the remaining levels are not modified. The recombination is negligible up to a current density of 50 A/cm 2 and increases at higher current density. The enhanced recombination of the S 2 trap occurs at 300 K, which otherwise requires a 400 K annealing temperature. The process can be related to the electron-hole recombination at the associated defect.

  17. Amorphisation of boron carbide under slow heavy ion irradiation

    Gosset, D., E-mail: Dominique.gosset@cea.fr [CEA Saclay, DEN, DANS, DMN, SRMA, LA2M, Université Paris-Saclay, 91191, Gif/Yvette (France); Miro, S. [CEA Saclay, DEN, DANS, DMN, SRMP, Laboratoire JANNUS, Université Paris-Saclay, 91191, Gif/Yvette (France); Doriot, S. [CEA Saclay, DEN, DANS, DMN, SRMA, LA2M, Université Paris-Saclay, 91191, Gif/Yvette (France); Moncoffre, N. [CNRS/IN2P3/IPNL, 69622, Villeurbanne (France)

    2016-08-01

    Boron carbide B{sub 4}C is widely used as a neutron absorber in nuclear plants. Most of the post-irradiation examinations have shown that the structure of the material remains crystalline, in spite of very high atomic displacement rates. Here, we have irradiated B{sub 4}C samples with 4 MeV Au ions with different fluences at room temperature. Transmission electron microscopy (TEM) and Raman spectroscopy have been performed. The Raman analyses show a high structural disorder at low fluence, around 10{sup −2} displacements per atoms (dpa). However, the TEM observations show that the material remains crystalline up to a few dpa. At high fluence, small amorphous areas a few nanometers large appear in the damaged zone but the long range order is preserved. Moreover, the size and density of the amorphous zones do not significantly grow when the damage increases. On the other hand, full amorphisation is observed in the implanted zone at a Au concentration of about 0.0005. It can be inferred from those results that short range and long range damages arise at highly different fluences, that heavy ions implantation has drastic effects on the structure stability and that in this material self-healing mechanisms are active in the damaged zone.

  18. Microstructure of Au-ion irradiated 316L and FeNiCr austenitic stainless steels

    Jublot-Leclerc, S., E-mail: stephanie.jublot-leclerc@csnsm.in2p3.fr [CSNSM, Univ Paris-Sud, CNRS, Université Paris Saclay, 91405 Orsay (France); Li, X. [CSNSM, Univ Paris-Sud, CNRS, Université Paris Saclay, 91405 Orsay (France); Legras, L.; Lescoat, M.-L. [EDF R& D, Groupe Métallurgie, Les Renardières, 77818 Moret sur Loing (France); Fortuna, F.; Gentils, A. [CSNSM, Univ Paris-Sud, CNRS, Université Paris Saclay, 91405 Orsay (France)

    2016-11-15

    Thin foils of 316L were irradiated in situ in a Transmission Electron Microscope with 4 MeV Au ions at 450 °C and 550 °C. Similar irradiations were performed at 450 °C in FeNiCr. The void and dislocation microstructure of 316L is found to depend strongly on temperature. At 450 °C, a dense network of dislocation lines is observed in situ to grow from black dot defects by absorption of other black dots and interstitial clusters whilst no Frank loops are detected. At 550 °C, no such network is observed but large Frank loops and perfect loops whose sudden appearance is concomitant with a strong increase in void density as a result of a strong coupling between voids and dislocations. Moreover, differences in both alloys microstructure show the major role played by the minor constituents of 316L, increasing the stacking fault formation energy, and possibly leading to significant differences in swelling behaviour. - Highlights: • 316L and FeNiCr were ion irradiated in situ in a TEM at elevated temperature. • The minor constituents of 316L play a major role in the resulting microstructure. • A dense network of dislocations develops in both alloys from black dot defects. • The nucleation and growth of voids and dislocations are strongly correlated. • The Frank loop mean size saturates at similar dpa values as in neutron irradiation.

  19. Conductometric Determination of Single Pores in Polyethyleneterephthalate Irradiated by Heavy Ions

    Oganesyan, V R; Dörschel, B; Vetter, J E; Danziger, M; Hermsdorf, D

    2002-01-01

    Most of previous works devoted to the problem of track formation processes did not pay enough attention to direct measurement of the appearance of every individual pore in an array of many pores induced by the irradiation of polymer films with ions. Such measurements are not easy to carry out due to the extremely high electric resistance in the moment of pore opening. In this work the analysis of films irradiated with low particle fluences up to 3.7\\cdot 10^{3} ions/cm^2 is described. Polyethyleneterephthalate (PET) Hostaphan with a thickness of 20 m was used. The samples were irradiated with Bi ions of 11.4 MeV/amu energy. Using optimized etching conditions and computer aided data evaluation we obtained results, which are in good agreement with theoretical predictions and model calculations. The measured increase of conductivity beginning from the breakthrough of a single track up to the next pore opening in dependence on the etching time and the number of opened pores confirm the assumed model. Thus, the de...

  20. Conductometric determination of single pores in polyethyleneterephthalate irradiated by heavy ions

    Oganesyan, V R; Dörschel, B; Hermsdorf, D; Trofimov, V V; Vetter, J

    2002-01-01

    Most of the previous works devoted to the problem of track formation processes did not pay enough attention to direct measurement of the appearance of every individual pore in an array of many pores induced by the irradiation of polymer films with ions. Such measurements are not easy to carry out due to the extremely high electric resistance in the moment of pore opening. In this work the analysis of films irradiated with low particle fluences up to 3.7 centre dot 10 sup 3 ions/cm sup 2 is described. Polyethyleneterephthalate (PET) Hostaphan with a thickness of 20 mu m was used. The samples were irradiated with Bi ions of 11.4 MeV/amu energy. Using optimized etching conditions and computer aided data evaluation, we obtained results, which are in good agreement with theoretical predictions and model calculations. The measured increase of conductivity beginning from the breakthrough of a single track up to the next pore opening in dependence on the etching time and the number of opened pores confirm the assumed...

  1. Realization of double-pulse laser irradiating scheme for laser ion sources

    Li Zhangmin; Jin Qianyu; Liu Wei; Zhang Junjie; Sha Shan; Zhao Huanyu; Sun Liangting; Zhang Xuezhen; Zhao Hongwei

    2015-01-01

    A double-pulse laser irradiating scheme has been designed and established for the production of highly charged ion beams at Institute of Modern Physics (IMP), Chinese Academy of Sciences. The laser beam output by a Nd : YAG laser is split and combined by a double of beam splitters, between which the split laser beams are transmitted along different optical paths to get certain time delay between each other. With the help of a quarter-wave plate before the first splitter, the energy ratio between the two laser pulses can be adjusted between 3 : 8 to 8 : 3. To testify its feasibility, a preliminary experiment was carried out with the new-developed double-pulse irradiating scheme to produce highly charged carbon ions. Comparing the results with those got from the previous single-pulse irradiating scheme, the differences in the time structure and Charge State Distribution (CSD) of the ion pulse were observed, but its mechanisms and optimization require further studies. (authors)

  2. Conductometric determination of single pores in polyethyleneterephthalate irradiated by heavy ions

    Oganesyan, V.R.; Trofimov, V.V.; Doerschel, B.; Hermsdorf, D.; Vetter, J.; Danziger, M.

    2002-01-01

    Most of the previous works devoted to the problem of track formation processes did not pay enough attention to direct measurement of the appearance of every individual pore in an array of many pores induced by the irradiation of polymer films with ions. Such measurements are not easy to carry out due to the extremely high electric resistance in the moment of pore opening. In this work the analysis of films irradiated with low particle fluences up to 3.7·10 3 ions/cm 2 is described. Polyethyleneterephthalate (PET) Hostaphan with a thickness of 20μm was used. The samples were irradiated with Bi ions of 11.4 MeV/amu energy. Using optimized etching conditions and computer aided data evaluation, we obtained results, which are in good agreement with theoretical predictions and model calculations. The measured increase of conductivity beginning from the breakthrough of a single track up to the next pore opening in dependence on the etching time and the number of opened pores confirm the assumed model. Thus, the developed 'track-by-track' method can be used effectively for description of the sequential appearance of individual pores in an electrolytic etching process

  3. Temperature dependence of ion irradiation induced amorphization of zirconolite

    Smith, K. L.; Blackford, M. G.; Lumpkin, G. R.; Zaluzec, N. J.

    1999-01-01

    Zirconolite is one of the major host phases for actinides in various wasteforms for immobilizing high level radioactive waste (HLW). Over time, zirconolite's crystalline matrix is damaged by α-particles and energetic recoil nuclei recoil resulting from α-decay events. The cumulative damage caused by these particles results in amorphization. Data from natural zirconolites suggest that radiation damage anneals over geologic time and is dependant on the thermal history of the material. Proposed HLW containment strategies rely on both a suitable wasteform and geologic isolation. Depending on the waste loading, depth of burial, and the repository-specific geothermal gradient, burial could result in a wasteform being exposed to temperatures of between 100--450 C. Consequently, it is important to assess the effect of temperature on radiation damage in synthetic zirconolite. Zirconolite containing wasteforms are likely to be hot pressed at or below 1,473 K (1,200 C) and/or sintered at or below 1,623 K (1,350 C). Zirconolite fabricated at temperatures below 1,523 K (1,250 C) contains many stacking faults. As there have been various attempts to link radiation resistance to structure, the authors decided it was also pertinent to assess the role of stacking faults in radiation resistance. In this study, they simulate α-decay damage in two zirconolite samples by irradiating them with 1.5 MeV Kr + ions using the High Voltage Electron Microscope-Tandem User Facility (HTUF) at Argonne National Laboratory (ANL) and measure the critical dose for amorphization (D c ) at several temperatures between 20 and 773 K. One of the samples has a high degree of crystallographic perfection, the other contains many stacking faults on the unit cell scale. Previous authors proposed a model for estimating the activation energy of self annealing in zirconolite and for predicting the critical dose for amorphization at any temperature. The authors discuss their results and earlier published data in

  4. Energy related germination and survival rates of water-imbibed Arabidopsis seeds irradiated with protons

    Qin, H.L.; Xue, J.M.; Lai, J.N.; Wang, J.Y.; Zhang, W.M.; Miao, Q.; Yan, S.; Zhao, W.J.; He, F.; Gu, H.Y.; Wang, Y.G.

    2006-01-01

    In order to investigate the influence of ion energy on the germination and survival rates, water-imbibed Arabidopsis seeds were irradiated with protons in atmosphere. The ion fluence used in this experiment was in the range of 4 x 10 9 -1 x 10 14 ions/cm 2 . The ion energy is from 1.1 MeV to 6.5 MeV. According to the structure of the seed and TRIM simulation, the ions with the energy of 6.5 MeV can irradiate the shoot apical meristem directly whereas the ions with the energy of 1.1 MeV cannot. The results showed that both the germination and survival rates decrease while increasing the ion fluence, and the fluence-respond curve for each energy has different character. Besides the shoot apical meristem (SAM), which is generally considered as the main radiobiological target, the existence of a secondary target around SAM is proposed in this paper

  5. Energy related germination and survival rates of water-imbibed Arabidopsis seeds irradiated with protons

    Qin, H.L. [Key Laboratory of Heavy Ion Physics, MOE, Peking University, Beijing 100871 (China); Xue, J.M. [Key Laboratory of Heavy Ion Physics, MOE, Peking University, Beijing 100871 (China); Lai, J.N. [Key Laboratory of Heavy Ion Physics, MOE, Peking University, Beijing 100871 (China); Wang, J.Y. [Key Laboratory of Heavy Ion Physics, MOE, Peking University, Beijing 100871 (China); Zhang, W.M. [Key Laboratory of Heavy Ion Physics, MOE, Peking University, Beijing 100871 (China); Miao, Q. [Key Laboratory of Heavy Ion Physics, MOE, Peking University, Beijing 100871 (China); Yan, S. [Key Laboratory of Heavy Ion Physics, MOE, Peking University, Beijing 100871 (China); Zhao, W.J. [Key Laboratory of Heavy Ion Physics, MOE, Peking University, Beijing 100871 (China); He, F. [School of Life Science, Peking University, Beijing 100871 (China); Gu, H.Y. [School of Life Science, Peking University, Beijing 100871 (China); Wang, Y.G. [Key Laboratory of Heavy Ion Physics, MOE, Peking University, Beijing 100871 (China)]. E-mail: ygwang@pku.edu.cn

    2006-04-15

    In order to investigate the influence of ion energy on the germination and survival rates, water-imbibed Arabidopsis seeds were irradiated with protons in atmosphere. The ion fluence used in this experiment was in the range of 4 x 10{sup 9}-1 x 10{sup 14} ions/cm{sup 2}. The ion energy is from 1.1 MeV to 6.5 MeV. According to the structure of the seed and TRIM simulation, the ions with the energy of 6.5 MeV can irradiate the shoot apical meristem directly whereas the ions with the energy of 1.1 MeV cannot. The results showed that both the germination and survival rates decrease while increasing the ion fluence, and the fluence-respond curve for each energy has different character. Besides the shoot apical meristem (SAM), which is generally considered as the main radiobiological target, the existence of a secondary target around SAM is proposed in this paper.

  6. Amorphization, morphological instability and crystallization of krypton ion irradiated germanium

    Wang, L.M.; Birtcher, R.C.

    1991-01-01

    Krypton ion irradiation of crystalline Ge and subsequent thermal annealing were both carried out with in situ transmission electron microscopy observations. The temperature dependence of the amorphization dose, effect of foil thickness, morphological changes during continuous irradiation of the amorphous state as well as the effect of implanted gas have been determined. The dose of 1.5 MeV Kr required for amorphization increases with increasing temperature. At a fixed temperature, the amorphization dose is higher for thicker regions of the specimen. Continuous irradiation of amorphous Ge at room temperature results in a high density of small cavities which grow with increasing dose. Cavities do not coalesce during growth but develop into irregular-shaped holes that eventually transform the amorphous Ge into a sponge-like material. Formation of the spongy structure is independent of Kr implantation. The crystallization temperature and the morphology of recrystallized Ge depend on the Kr + dose. Voids are expelled from recrystallized Ge, while the sponge-like structure is retained after crystallization. (author)

  7. Thermo-stimulated luminescence of ion-irradiated yttria-stabilized zirconia

    Costantini, Jean-Marc [CEA, DMN, SRMA, 91191 Gif-sur Yvette Cedex (France); Beuneu, Francois [LSI, CEA-CNRS-Ecole Polytechnique, 91128 Palaiseau Cedex (France); Fasoli, Mauro; Galli, Anna; Vedda, Anna; Martini, Marco, E-mail: jean-marc.costantini@cea.fr [CNR-IFN (Italy)

    2011-03-23

    Yttria-stabilized zirconia (ZrO{sub 2}:Y{sup 3+}) single crystals (with 9.5 mol% Y{sub 2}O{sub 3}) were irradiated with ions (from 1 MeV He to 2.6 GeV U). Electron paramagnetic resonance (EPR) data show that two kinds of colour centres (F{sup +}-type and T centres) are produced. Thermo-stimulated luminescence (TSL) data exhibit a quite strong peak at {approx} 500-550 K in the glow curves of all irradiated samples regardless of the ion species and energy. Moreover, the 3D-TSL measurements reveal that this peak is correlated with a light emission at a wavelength of {approx} 620 nm (i.e. photon energy {approx} 2 eV). The TSL peak maximum temperatures are consistent with characteristic temperatures of about 500 K of annealing stages of colour centres. However, the trap-depth energies (ranging between 0.7 and 1.4 eV) deduced from the initial rise of partially cleaned TSL peaks, or from a rough approximation using Urbach's formula, are rather larger than the activation energies for defect recovery, ranging between 0.3 and 0.7 eV, as deduced from the EPR data. The processes involved in TSL are discussed in relation to available photoluminescence and defect energy-level data.

  8. Data acquisition system for light-ion irradiation creep experiment

    Hendrick, P.L.; Whitaker, T.J.

    1979-07-01

    Software was developed for a PDP11V/03-based data acquisition system to support the Light-Ion Irradiation Creep Experiment installed at the University of Washington Tandem Van de Graaff Accelerator. The software consists of a real-time data acquisition and storage program, DAC04, written in assembly language. This program provides for the acquisition of up to 30 chennels at 100 Hz, data averaging before storage on disk, alarming, data table display, and automatic disk switching. All analog data are acquired via an analog-to-digital converter subsystem having a resolution of 14 bits, a maximum throughput of 20 kHz, and an overall system accuracy of +-0.01%. These specifications are considered essential for the long-term measurement of irradiation creep strains and temperatures during the light-ion bombardment of irradiation creep specimens. The software package developed also contains a collection of FORTRAN programs designed to monitor a test while in progress. These programs use the foreground/background feature of the RT-11 operating system. The background programs provide a variety of services. The program, GRAFTR, allows transient data (i.e., prior to averaging) to be graphed at the graphics terminal. The program, GRAFAV, allows averaged data to be read from disk and displayed graphically at the terminal. The program, TYPAV, reads averaged data from disk and displays it at the terminal in tabular form. Other programs allow text messages to be written to disk, read from disk, and allow access to DAC04 initialization data. 5 figures, 18 tables

  9. Irradiation effect of different heavy ions and track section on the silkworm Bombyx mori

    Tu Zhenli; Kobayashi, Yasuhiko; Kiguchi, Kenji; Watanabe, Hiroshi

    2003-01-01

    In order to compare the irradiation effects of different ions, wandering larvae were whole-body exposed or locally irradiated with 50-MeV 4 He 2+ , 220-MeV 12 C 5+ , and 350-MeV 20 Ne 8+ ions, respectively. For the whole-body-exposed individuals, the survival rates at the cocooning, pupation, and emergence stages all decreased as dose increased, and a range-dependent difference was clearly observed. For local irradiation of ovaries, irradiation effects depend very strongly on the projectile range. In the case of local irradiation of dermal cells by different track sections of heavy ions, the closer the target was to the high-LET section of the track, the more pronounced were the radiation effects. These results indicated that by selectively using ion species and adjusting the irradiation depth to the target, heavy-ion radiosurgery on particular tissues or organs of small experimental animals can be performed more accurately

  10. Coulomb-driven energy boost of heavy ions for laser-plasma acceleration.

    Braenzel, J; Andreev, A A; Platonov, K; Klingsporn, M; Ehrentraut, L; Sandner, W; Schnürer, M

    2015-03-27

    An unprecedented increase of kinetic energy of laser accelerated heavy ions is demonstrated. Ultrathin gold foils have been irradiated by an ultrashort laser pulse at a peak intensity of 8×10^{19}  W/  cm^{2}. Highly charged gold ions with kinetic energies up to >200  MeV and a bandwidth limited energy distribution have been reached by using 1.3 J laser energy on target. 1D and 2D particle in cell simulations show how a spatial dependence on the ion's ionization leads to an enhancement of the accelerating electrical field. Our theoretical model considers a spatial distribution of the ionization inside the thin target, leading to a field enhancement for the heavy ions by Coulomb explosion. It is capable of explaining the energy boost of highly charged